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Sample records for bismuth silicon oxide

  1. Raman spectroscopy of bismuth silicon oxide single crystals grown by the Czochralski technique

    NASA Astrophysics Data System (ADS)

    Lazarević, Z.; Kostić, S.; Radojević, V.; Romčević, M.; Gilić, M.; Petrović-Damjanović, M.; Romčević, N.

    2013-11-01

    In this work, single crystals of bismuth silicon oxide (BSO; Bi12SiO20) have been grown by the Czochralski method. The growth conditions were studied. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. The structure of the Bi12SiO20 has been investigated by x-ray diffraction (XRD), and Raman and Fourier transform infrared spectroscopy (FTIR) spectroscopy. The results obtained are discussed and compared with the published data. The pale yellow Bi12SiO20 single crystals prepared were without cores. Using spectroscopic measurements 19 Raman and 5 IR modes were observed.

  2. Phase-shifting real-time holographic interferometry that uses bismuth silicon oxide crystals.

    PubMed

    Georges, M P; Lemaire, P C

    1995-11-10

    A bismuth silicon oxide crystal is used in the diffusion regime as a dynamic recording medium in a real-time holographic interferometer based on anisotropic self-diffraction. This device is connected with an interferogram-analysis method that uses the phase-shifting technique for quantitative measurement of diffusive-reflecting object deformations. In addition to the usual error sources in phase shifting, the temporal interferogram erasure is studied and is found weakly perturbative for the measured phase. It is shown that quantitative measurements are possible for low-intensity object beams (8 µW/cm(2)) and a large observed area. Apractical situation of defect monitoring in a composite structure is presented. PMID:21060624

  3. Introduction, revelation, and evolution of complementary gratings in photorefractive bismuth silicon oxide

    SciTech Connect

    Bashaw, M.C.; Ma, T.; Barker, R.C.; Mroczkowski, S. Department of Electrical Engineering, Center for Microelectronic Materials and Structures, Yale University, New Haven, CT ); Dube, R.R. )

    1990-09-15

    Principal and complementary space-charge gratings are formed in photorefractive bismuth silicon oxide with use of 785-nm light. An electric field is optionally applied in the direction of the grating for hologram evolution by either drift or diffusion of charge carriers. For write times on the order of the decay time of the principal grating, no complementary behavior is observed. For much longer write times, a complementary space-charge grating is introduced both in the presence and in the absence of the applied field, and is initially hidden due to screening by the principal grating. Uniform illumination in the presence of the field reveals the complementary grating. Time-resolved data show its growth and decay, with a response rate much lower than that of the principal grating. A two-level electron-hole transport model explains the observations; one level participates in the establishment of the principal grating by majority carriers, and the other in the establishment of the extended-lifetime complementary grating by minority carriers. A scheme for multiplexing normal and extended-lifetime complementary gratings is presented.

  4. Bismuth Oxide Thin Films Deposited on Silicon Through Pulsed Laser Ablation, for Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Condurache-Bota, Simona; Constantinescu, Catalin; Tigau, Nicolae; Praisler, Mirela

    2016-12-01

    Infrared detectors are used in many human activities, from industry to military, telecommunications, environmental studies and even medicine. Bismuth oxide thin films have proved their potential for optoelectronic applications, but their uses as infrared sensors have not been thoroughly studied so far. In this paper, pulsed laser ablation of pure bismuth targets within a controlled oxygen atmosphere is proposed for the deposition of bismuth oxide films on Si (100) substrates. Crystalline films were obtained, whose uniformity depends on the deposition conditions (number of laser pulses and the use of a radio-frequency (RF) discharge of the oxygen inside the deposition chamber). The optical analysis proved that the refractive index of the films is higher than 3 and that their optical bandgap is around 1eV, recommending them for infrared applications.

  5. Potassium barium bismuth oxide.

    PubMed

    Derrien, G; Tillard, M; Monconduit, L; Belin, C

    2000-06-01

    KBa(4)Bi(3)O crystallizes in the centrosymmetric tetragonal space group I4/mcm. In this compound, bismuth is present as two anionic species, i.e. Bi(2)(4-) dumbbells [Bi-Bi 3.113 (3) A] and isolated Bi(3-). Atom Bi1 (Bi(3-)) lies inside a bicapped square antiprism (2 x K and 8 x Ba). Atom Bi2, which forms the Bi(2)(4-) dumbbell, sits inside a bicapped distorted trigonal prism (2 x K and 6 x Ba). O atoms occupy tetrahedral voids between Ba atoms. PMID:15263105

  6. Thermoelectric Properties of Bismuth and Silicon Nanowires

    NASA Astrophysics Data System (ADS)

    Boukai, Akram Issam

    Thermoelectric materials convert temperature differences into electricity and vice versa. Such materials utilize the Seebeck effect for power generation and the Peltier effect for refrigeration. In the Seebeck effect, a temperature gradient across a material causes the diffusion of charged carriers across that gradient, thus creating a voltage difference between the hot and cold ends of the material. Conversely, the Peltier effect explains the fact that when current flows through a material a temperature gradient arises because the charged carriers exchange thermal energy at the contacts. Thermoelectrics perform these functions without moving parts and they do not pollute. This makes them highly reliable and more importantly attractive as renewable energy sources, especially at a time when global warming is a growing concern. However, thermoelectrics find only limited use because of their poor efficiency. The efficiency of a thermoelectric material is determined by the dimensionless figure of merit, ZT = S2k T, where S is the thermoelectric power, defined as the thermoelectric voltage, V, produced per degree temperature difference S = dVdT , sigma is the electrical conductivity, kappa is the thermal conductivity, and T is the temperature. To maximize ZT, S must be large so that a small temperature difference can create a large voltage, sigma must be large in order to minimize joule heating losses, and kappa must be small to reduce heat leakage and maintain a temperature difference. Maximizing ZT is challenging because optimizing one physical parameter often adversely affects another. The best commercially available thermoelectric devices are alloys of Bi2Te3 and have a ZT of 1 which corresponds to a cannot efficiency of ˜10%. My research has focused on achieving efficient thermoelectric performance from the single component systems of bismuth and silicon nanowires. Bismuth nanowires are predicted to undergo a semi-metal to semiconductor transition below a size of 50 nm which should increase the thermopower and thus ZT. Limited experimental evidence by other groups has been acquired to support this claim. Through electric field gating measurements and by tuning the nanowire size, we have shown that no such transition occurs. Instead, surface states dominate the electric transport at a size smaller than 50 nm and bismuth remains a semimetal. Bulk silicon is a poor thermoelectric due to its large thermal conductivity. However, silicon nanowires may have a dramatically reduced thermal conductivity. By varying the nanowire size and impurity doping levels, ZT values representing an approximately 100-fold improvement over bulk silicon are achieved over a broad temperature range, including a ZT ˜ 1 at 200K. Independent measurements of S, sigma, and kappa, combined with theory, indicate that the improved efficiency originates from phonon effects. The thermal conductivity is reduced and the thermopower is enhanced. These results are expected to apply to other classes of semiconductor nanomaterials.

  7. Bismuth Carboxylates as Precursors for the Incorporation of Bismuth in Oxide-based Materials

    NASA Astrophysics Data System (ADS)

    Devillers, M.; Tirions, O.; Cadus, L.; Ruiz, P.; Delmon, B.

    1996-11-01

    The use of bismuth(III) carboxylates (acetate, oxoacetate, lactate, oxalate) as precursors for the incorporation of this element on oxide supports is evaluated as a new tool to generate bismuth-based oxide phases at the surface of MoO3or WO3supports. These insoluble precursors are deposited as small particles from a slurry in a liquid hydrocarbon under appropriate experimental conditions. Bismuth molybdate and tungstate phases are produced by solid-state reactions betweenin situgenerated Bi2O3and the supporting oxide at 673 K. The samples are characterized by specific surface area measurements, X-ray diffractometry, and X-ray photoelectron spectroscopy. The selective oxidation of isobutene to methacrolein is employed as a reaction test to demonstrate the applicability of this approach. The use of precursors containing lactate or acetate-type ligands is found to generate materials displaying enhanced specific surface area and high bismuth-to-molybdenum surface atomic ratios. This bismuth enrichment of the surface is indicative of the presence of dispersed crystallites of either Bi2O3itself or ternary Bi-Mo-O or Bi-W-O phases, which are known to promote partial oxidation of alkenes. The performances of these materials in the isobutene to methacrolein conversion are indeed in most cases definitely better than those of the so-called reference materials obtained from the simple mixtures of the same oxides prepared separately.

  8. Buried oxide layer in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  9. Spin dynamics of complex oxides, bismuth-antimony alloys, and bismuth chalcogenides

    NASA Astrophysics Data System (ADS)

    Sahin, Cuneyt

    The emerging field of spintronics relies on the manipulation of electron spin in order to use it in spin-based electronics. Such a paradigm change has to tackle several challenges including finding materials with sufficiently long spin lifetimes and materials which are efficient in generating pure spin currents. This thesis predicts that two types of material families could be a solution to the aforementioned challenges: complex oxides and bismuth based materials. We derived a general approach for constructing an effective spin-orbit Hamiltonian which is applicable to all nonmagnetic materials. This formalism is useful for calculating spin-dependent properties near an arbitrary point in momentum space. We also verified this formalism through comparisons with other approaches for III-V semiconductors, and its general applicability is illustrated by deriving the spin-orbit interaction and predicting spin lifetimes for strained strontium titanate (STO) and a two-dimensional electron gas in STO (such as at the LAO/STO interface). Our results suggest robust spin coherence and spin transport properties in STO related materials even at room temperature. In the second part of the study we calculated intrinsic spin Hall conductivities for bismuth-antimony (BISb) semimetals with strong spin-orbit couplings, from the Kubo formula and using Berry curvatures evaluated throughout the Brillouin zone from a tight-binding Hamiltonian. Nearly crossing bands with strong spin-orbit interaction generate giant spin Hall conductivities in these materials, ranging from 474 ((h/e)O--1cm--1) for bismuth to 96((h/e)O--1cm --1) for antimony; the value for bismuth is more than twice that of platinum. The large spin Hall conductivities persist for alloy compositions corresponding to a three-dimensional topological insulator state, such as Bi0.83Sb0.17. The spin Hall conductivity could be changed by a factor of 5 for doped Bi, or for Bi0.83Sb0.17, by changing the chemical potential by 0.5 eV, suggesting the potential for doping or voltage tuned spin Hall current. We have also calculated intrinsic spin Hall conductivities of bismuth selenide and bismuth telluride topological insulators from an effective tight-binding Hamiltonian including two nearest-neighbor interactions. We showed that both materials exhibit giant spin Hall conductivities calculated from the Kubo formula in linear response theory and the clean static limit. We conclude that bismuth-antimony alloys and bismuth chalcogenides are primary candidates for efficiently generating spin currents through the spin Hall effect.

  10. Spray pyrolysed bismuth oxide thin films and their characterization

    SciTech Connect

    Gujar, T.P. . E-mail: gujar_tp@yahoo.com; Shinde, V.R.; Lokhande, C.D. . E-mail: l_chandrakant@yahoo.com

    2006-08-10

    Uniform, adherent and reproducible bismuth oxide thin films have been deposited on glass substrates from aqueous Bi(NO{sub 3}){sub 3} solution, using the solution spray technique. Their structural, surface morphological, optical, and electrical properties were investigated by XRD, AFM, optical absorption, electrical resistivity and thermo-emf measurements. The structural analysis from XRD pattern showed the formation of mixed phases of monoclinic Bi{sub 2}O{sub 3} (predominant), tetragonal {beta}-Bi{sub 2}O{sub 3} and nonstiochiometric Bi{sub 2}O{sub 2.33}. The surface morphological studies on atomic force micrographs revealed round grain morphology of bismuth oxide crystallites. The optical studies showed a direct band gap of 2.90 eV for as-prepared bismuth oxide films. The electrical resistivity measurements of bismuth oxide films indicated a semiconducting behavior with the room temperature electrical resistivity of the order of 10{sup 7} {omega} cm. From thermo-emf measurements, the electrical conductivity was found to be of n-type.

  11. Bismuth-based oxide semiconductors: Mild synthesis and practical applications

    NASA Astrophysics Data System (ADS)

    Timmaji, Hari Krishna

    In this dissertation study, bismuth based oxide semiconductors were prepared using 'mild' synthesis techniques---electrodeposition and solution combustion synthesis. Potential environmental remediation and solar energy applications of the prepared oxides were evaluated. Bismuth vanadate (BiVO4) was prepared by electrodeposition and solution combustion synthesis. A two step electrosynthesis strategy was developed and demonstrated for the first time. In the first step, a Bi film was first electrodeposited on a Pt substrate from an acidic BiCl3 medium. Then, this film was anodically stripped in a medium containing hydrolyzed vanadium precursor, to generate Bi3+, and subsequent BiVO4 formation by in situ precipitation. The photoelectrochemical data were consistent with the in situ formation of n-type semiconductor films. In the solution combustion synthesis procedure, BiVO4 powders were prepared using bismuth nitrate pentahydrate as the bismuth precursor and either vanadium chloride or vanadium oxysulfate as the vanadium precursor. Urea, glycine, or citric acid was used as the fuel. The effect of the vanadium precursor on the photocatalytic activity of combustion synthesized BiVO 4 was evaluated in this study. Methyl orange was used as a probe to test the photocatalytic attributes of the combustion synthesized (CS) samples, and benchmarked against a commercial bismuth vanadate sample. The CS samples showed superior activity to the commercial benchmark sample, and samples derived from vanadium chloride were superior to vanadium oxysulfate counterparts. The photoelectrochemical properties of the various CS samples were also studied and these samples were shown to be useful both for environmental photocatalytic remediation and water photooxidation applications. Silver bismuth tungstate (AgBiW2O8) nanoparticles were prepared for the first time by solution combustion synthesis by using silver nitrate, bismuth nitrate, sodium tungstate as precursors for Ag, Bi, and W respectively and urea as the fuel. The photocatalytic activity of these nanoparticles was superior to a sample prepared by solid-state synthesis. The combustion-synthesized particles were subsequently modified with Pt catalyst islands using a photodeposition technique and then used for the photo-generation of syngas (CO + H2). Formic acid was used in these experiments for in situ generation of CO2 and its subsequent reduction to CO. In the absence of Pt modification, H2 was not obtained. These results were compared with those obtained with acetic acid in place of formic acid, and finally the mechanistic pathways for syngas and methane photogeneration are presented.

  12. Oxide layer stability in lead-bismuth at high temperature

    NASA Astrophysics Data System (ADS)

    Martín, F. J.; Soler, L.; Hernández, F.; Gómez-Briceño, D.

    2004-11-01

    Materials protection by 'in situ' oxidation has been studied in stagnant lead-bismuth, with different oxygen levels (H 2/H 2O ratios of 0.3 and 0.03), at temperatures from 535 °C to 600 °C and times from 100 to 3000 h. The materials tested were the martensitic steels F82Hmod, EM10 and T91 and the austenitic stainless steels, AISI 316L and AISI 304L. The results obtained point to the existence of an apparent threshold temperature above which corrosion occurs and the formation of a protective and stable oxide layer is not possible. This threshold temperature depends on material composition, oxygen concentration in the liquid lead-bismuth and time. The threshold temperature is higher for the austenitic steels, especially for the AISI 304L, and it increases with the oxygen concentration in the lead-bismuth. The oxide layer formed disappear with time and, after 3000 h all the materials, except AISI 304L, suffer corrosion, more severe for the martensitic steels and at the highest temperature tested.

  13. Oxidation resistance of silicon ceramics

    NASA Technical Reports Server (NTRS)

    Yasutoshi, H.; Hirota, K.

    1984-01-01

    Oxidation resistance, and examples of oxidation of SiC, Si3N4 and sialon are reviewed. A description is given of the oxidation mechanism, including the oxidation product, oxidation reaction and the bubble size. The oxidation reactions are represented graphically. An assessment is made of the oxidation process, and an oxidation example of silicon ceramics is given.

  14. METHOD OF PREPARING URANIUM, THORIUM, OR PLUTONIUM OXIDES IN LIQUID BISMUTH

    DOEpatents

    Davidson, J.K.; Robb, W.L.; Salmon, O.N.

    1960-11-22

    A method is given for forming compositions, as well as the compositions themselves, employing uranium hydride in a liquid bismuth composition to increase the solubility of uranium, plutonium and thorium oxides in the liquid bismuth. The finely divided oxide of uranium, plutonium. or thorium is mixed with the liquid bismuth and uranium hydride, the hydride being present in an amount equal to about 3 at. %, heated to about 5OO deg C, agitated and thereafter cooled and excess resultant hydrogen removed therefrom.

  15. Bismuth Oxide Nanoparticles in the Stratosphere

    NASA Technical Reports Server (NTRS)

    Rietmeijer, Frans J. M.; Mackinnon, Ian D. R.

    1997-01-01

    Platey grains of cubic Bi2O3, alpha-Bi2O3, and Bi2O(2.75), nanograins were associated with chondritic porous interplanetary dust particles W7029C1, W7029E5, and 2011C2 that were collected in the stratosphere at 17-19 km altitude. Similar Bi oxide nanograins were present in the upper stratosphere during May 1985. These grains are linked to the plumes of several major volcanic eruptions during the early 1980s that injected material into the stratosphere. The mass of sulfur from these eruptions is a proxy for the mass of stratospheric Bi from which we derive the particle number densities (p/cu m) for "average Bi2O3 nanograins" due to this volcanic activity and those necessary to contaminate the extraterrestrial chondritic porous interplanetary dust particles via collisional sticking. The match between both values supports the idea that Bi2O3 nanograins of volcanic origin could contaminate interplanetary dust particles in the Earth's stratosphere.

  16. Silicon oxidation in fluoride solutions

    NASA Technical Reports Server (NTRS)

    Sancier, K. M.; Kapur, V.

    1980-01-01

    Silicon is produced in a NaF, Na2SiF6, and Na matrix when SiF4 is reduced by metallic sodium. Hydrogen is evolved during acid leaching to separate the silicon from the accompanying reaction products, NaF and Na2SiF6. The hydrogen evolution reaction was studied under conditions simulating leaching conditions by making suspensions of the dry silicon powder in aqueous fluoride solutions. The mechanism for the hydrogen evolution is discussed in terms of spontaneous oxidation of silicon resulting from the cooperative effects of (1) elemental sodium in the silicon that reacts with water to remove a protective silica layer, leaving clean reactive silicon, and (2) fluoride in solution that complexes with the oxidized silicon in solution and retards formation of a protective hydrous oxide gel.

  17. Optical pumping and readout of bismuth hyperfine states in silicon for atomic clock applications.

    PubMed

    Saeedi, K; Szech, M; Dluhy, P; Salvail, J Z; Morse, K J; Riemann, H; Abrosimov, N V; Ntzel, N; Litvinenko, K L; Murdin, B N; Thewalt, M L W

    2015-01-01

    The push for a semiconductor-based quantum information technology has renewed interest in the spin states and optical transitions of shallow donors in silicon, including the donor bound exciton transitions in the near-infrared and the Rydberg, or hydrogenic, transitions in the mid-infrared. The deepest group V donor in silicon, bismuth, has a large zero-field ground state hyperfine splitting, comparable to that of rubidium, upon which the now-ubiquitous rubidium atomic clock time standard is based. Here we show that the ground state hyperfine populations of bismuth can be read out using the mid-infrared Rydberg transitions, analogous to the optical readout of the rubidium ground state populations upon which rubidium clock technology is based. We further use these transitions to demonstrate strong population pumping by resonant excitation of the bound exciton transitions, suggesting several possible approaches to a solid-state atomic clock using bismuth in silicon, or eventually in enriched (28)Si. PMID:25990870

  18. Optical pumping and readout of bismuth hyperfine states in silicon for atomic clock applications

    PubMed Central

    Saeedi, K.; Szech, M.; Dluhy, P.; Salvail, J.Z.; Morse, K.J.; Riemann, H.; Abrosimov, N.V.; Nötzel, N.; Litvinenko, K.L.; Murdin, B.N.; Thewalt, M.L.W.

    2015-01-01

    The push for a semiconductor-based quantum information technology has renewed interest in the spin states and optical transitions of shallow donors in silicon, including the donor bound exciton transitions in the near-infrared and the Rydberg, or hydrogenic, transitions in the mid-infrared. The deepest group V donor in silicon, bismuth, has a large zero-field ground state hyperfine splitting, comparable to that of rubidium, upon which the now-ubiquitous rubidium atomic clock time standard is based. Here we show that the ground state hyperfine populations of bismuth can be read out using the mid-infrared Rydberg transitions, analogous to the optical readout of the rubidium ground state populations upon which rubidium clock technology is based. We further use these transitions to demonstrate strong population pumping by resonant excitation of the bound exciton transitions, suggesting several possible approaches to a solid-state atomic clock using bismuth in silicon, or eventually in enriched 28Si. PMID:25990870

  19. Photoelastic constants of germanate glasses containing lead and bismuth oxides

    SciTech Connect

    Rabukhin, A.I.

    1995-07-01

    Regression equations which accurately approximate the concentration curves of the photoelastic constants of lead bismuth germanate glasses were obtained and the isolines of the photoelastic constants were plotted and graphically illustrate the change in the properties of the glasses in almost the entire glass-formation region of the PbO-Bi{sub 2}O{sub 3}-GeO{sub 2} system. The partial values of the photoelastic constants of the oxides, components of these glasses, were determined and are in agreement with the values established for glasses of other systems. The data obtained can be used in planning the compositions of effective optical media for fabrication of light and acoustic lines for acousto-optic instruments and glasses with a zero optical stress coefficient.

  20. Structure and resistivity of bismuth nanobelts in situ synthesized on silicon wafer through an ethanol-thermal method

    SciTech Connect

    Gao Zheng; Qin Haiming; Yan Tao

    2011-12-15

    Bismuth nanobelts in situ grown on a silicon wafer were synthesized through an ethanol-thermal method without any capping agent. The structure of the bismuth belt-silicon composite nanostructure was characterized by scanning electron microscope, energy-dispersive X-ray spectroscopy, and high resolution transmission electron microscope. The nanobelt is a multilayered structure 100-800 nm in width and over 50 {mu}m in length. One layer has a thickness of about 50 nm. A unique sword-like nanostructure is observed as the initial structure of the nanobelts. From these observations, a possible growth mechanism of the nanobelt is proposed. Current-voltage property measurements indicate that the resistivity of the nanobelts is slightly larger than that of the bulk bismuth material. - Graphical Abstract: TEM images, EDS, and electron diffraction pattern of bismuth nanobelts. Highlights: Black-Right-Pointing-Pointer Bismuth nanobelts in situ grown on silicon wafer were achieved. Black-Right-Pointing-Pointer Special bismuth-silicon nanostructure. Black-Right-Pointing-Pointer Potential application in sensitive magnetic sensor and other electronic devices.

  1. Bismuth oxide aqueous colloidal nanoparticles inhibit Candida albicans growth and biofilm formation.

    PubMed

    Hernandez-Delgadillo, Rene; Velasco-Arias, Donaji; Martinez-Sanmiguel, Juan Jose; Diaz, David; Zumeta-Dube, Inti; Arevalo-Niño, Katiushka; Cabral-Romero, Claudio

    2013-01-01

    Multiresistance among microorganisms to common antimicrobials has become one of the most significant concerns in modern medicine. Nanomaterials are a new alternative to successfully treat the multiresistant microorganisms. Nanostructured materials are used in many fields, including biological sciences and medicine. Recently, it was demonstrated that the bactericidal activity of zero-valent bismuth colloidal nanoparticles inhibited the growth of Streptococcus mutans; however the antimycotic potential of bismuth nanostructured derivatives has not yet been studied. The main objective of this investigation was to analyze the fungicidal activity of bismuth oxide nanoparticles against Candida albicans, and their antibiofilm capabilities. Our results showed that aqueous colloidal bismuth oxide nanoparticles displayed antimicrobial activity against C. albicans growth (reducing colony size by 85%) and a complete inhibition of biofilm formation. These results are better than those obtained with chlorhexidine, nystatin, and terbinafine, the most effective oral antiseptic and commercial antifungal agents. In this work, we also compared the antimycotic activities of bulk bismuth oxide and bismuth nitrate, the precursor metallic salt. These results suggest that bismuth oxide colloidal nanoparticles could be a very interesting candidate as a fungicidal agent to be incorporated into an oral antiseptic. Additionally, we determined the minimum inhibitory concentration for the synthesized aqueous colloidal Bi2O3 nanoparticles. PMID:23637533

  2. Bismuth oxide aqueous colloidal nanoparticles inhibit Candida albicans growth and biofilm formation

    PubMed Central

    Hernandez-Delgadillo, Rene; Velasco-Arias, Donaji; Martinez-Sanmiguel, Juan Jose; Diaz, David; Zumeta-Dube, Inti; Arevalo-Niño, Katiushka; Cabral-Romero, Claudio

    2013-01-01

    Multiresistance among microorganisms to common antimicrobials has become one of the most significant concerns in modern medicine. Nanomaterials are a new alternative to successfully treat the multiresistant microorganisms. Nanostructured materials are used in many fields, including biological sciences and medicine. Recently, it was demonstrated that the bactericidal activity of zero-valent bismuth colloidal nanoparticles inhibited the growth of Streptococcus mutans; however the antimycotic potential of bismuth nanostructured derivatives has not yet been studied. The main objective of this investigation was to analyze the fungicidal activity of bismuth oxide nanoparticles against Candida albicans, and their antibiofilm capabilities. Our results showed that aqueous colloidal bismuth oxide nanoparticles displayed antimicrobial activity against C. albicans growth (reducing colony size by 85%) and a complete inhibition of biofilm formation. These results are better than those obtained with chlorhexidine, nystatin, and terbinafine, the most effective oral antiseptic and commercial antifungal agents. In this work, we also compared the antimycotic activities of bulk bismuth oxide and bismuth nitrate, the precursor metallic salt. These results suggest that bismuth oxide colloidal nanoparticles could be a very interesting candidate as a fungicidal agent to be incorporated into an oral antiseptic. Additionally, we determined the minimum inhibitory concentration for the synthesized aqueous colloidal Bi2O3 nanoparticles. PMID:23637533

  3. Bismuth doped ZnSe films fabricated on silicon substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Shen, Yiqun; Xu, Ning; Hu, Wei; Xu, Xiaofeng; Sun, Jian; Ying, Zhifeng; Wu, Jiada

    2008-11-01

    The preparation of bismuth doped ZnSe films on silicon (1 0 0) by pulsed laser deposition (PLD) is reported. Bismuth was used as a p-type dopant source material for ZnSe. The stable p-type films with hole carrier concentration of about 1016-1018 cm-3 were obtained. By scanning electron microscopy (SEM) and X-ray diffraction (XRD), it was found that the ambient pressure during film deposition has much to do with the morphology and crystallinity of the as-deposited products. The presence of Bi in the Bi-doped ZnSe films was confirmed by the X-ray photoelectron spectroscopy (XPS) and the possibility of a BiZn-2VZn complex forming a shallow acceptor level was discussed.

  4. Nanoporous silicon oxide memory.

    PubMed

    Wang, Gunuk; Yang, Yang; Lee, Jae-Hwang; Abramova, Vera; Fei, Huilong; Ruan, Gedeng; Thomas, Edwin L; Tour, James M

    2014-08-13

    Oxide-based two-terminal resistive random access memory (RRAM) is considered one of the most promising candidates for next-generation nonvolatile memory. We introduce here a new RRAM memory structure employing a nanoporous (NP) silicon oxide (SiOx) material which enables unipolar switching through its internal vertical nanogap. Through the control of the stochastic filament formation at low voltage, the NP SiOx memory exhibited an extremely low electroforming voltage (∼ 1.6 V) and outstanding performance metrics. These include multibit storage ability (up to 9-bits), a high ON-OFF ratio (up to 10(7) A), a long high-temperature lifetime (≥ 10(4) s at 100 °C), excellent cycling endurance (≥ 10(5)), sub-50 ns switching speeds, and low power consumption (∼ 6 × 10(-5) W/bit). Also provided is the room temperature processability for versatile fabrication without any compliance current being needed during electroforming or switching operations. Taken together, these metrics in NP SiOx RRAM provide a route toward easily accessed nonvolatile memory applications. PMID:24992278

  5. A novel structure photonic crystal fiber based on bismuth-oxide for optical parametric amplification

    NASA Astrophysics Data System (ADS)

    Jin, Cang; Yuan, Jinhui; Yu, Chongxiu

    2010-11-01

    The heavy metal oxide glasses containing bismuth such as bismuth sesquioxide show unique high refractive index. In addition, the bismuth-oxide based glass does not include toxic elements such as Pb, As, Se, Te, and exhibits well chemical, mechanical and thermal stability. Hence, it is used to fabricate high nonlinear fiber for nonlinear optical application. Although the bismuth-oxide based high nonlinear fiber can be fusion-spliced to conventional silica fibers and have above advantages, yet it suffers from large group velocity dispersion because of material chromatic dispersion which restricts its utility. In regard to this, the micro-structure was introduced to adjust the dispersion of bismuth-oxide high nonlinear fiber in the 1550nm wave-band. In this paper, a hexagonal solid-core micro-structure is developed to balance its dispersion and nonlinearity. Our simulation and calculation results show that the bismuth-oxide based photonic crystal fiber has near zero dispersion around 1550nm where the optical parametric amplification suitable wavelength is. Its dispersion slop in the communication wavelength range is also relatively flat. Moreover, both nonlinear coefficient and model filed distribution were simulated, respectively.

  6. Morphology modulated growth of bismuth tungsten oxide nanocrystals

    SciTech Connect

    Yao Shushan; Wei, Jiyong; Huang Baibiao Feng Shengyu; Zhang Xiaoyang; Qin Xiaoyan; Wang Peng; Wang Zeyan; Zhang Qi; Jing Xiangyang; Zhan Jie

    2009-02-15

    Two kinds of bismuth tungsten oxide nanocrystals were prepared by microwave hydrothermal method. The morphology modulation of nanocrystals synthesized with precursor suspension's pH varied from 0.25 (strong acid) to 10.05 (base) was studied. The 3D flower like aggregation of Bi{sub 2}WO{sub 6} nanoflakes was synthesized in acid precursor suspension and the nanooctahedron crystals of Bi{sub 3.84}W{sub 0.16}O{sub 6.24} were synthesized in alkalescent precursor. The dominant crystal is changed from Bi{sub 2}WO{sub 6} to Bi{sub 3.84}W{sub 0.16}O{sub 6.24} when the precursor suspension changes from acid to alkalescence. The growth mechanisms of Bi{sub 2}WO{sub 6} and Bi{sub 3.84}W{sub 0.16}O{sub 6.24} were attributed to the different solubility of WO{sub 4}{sup 2-} and [Bi{sub 2}O{sub 2}]{sup 2+} in precursor suspensions with various pH. For the decomposition of Rhodamine B (RhB) under visible light irradiation ({lambda}>400 nm), different morphology of Bi{sub 2}WO{sub 6} crystal samples obtained by microwavesolvothermal process showed different photocatalytic activity. - Graphical abstract: The morphology modulation of bismuth tungsten oxide nanocrystals synthesized by microwave hydrothermal method with precursor suspension's pH varied from 0.25 (strong acid) to 10.05 (base) was studied. The 3D flower like aggregation of Bi{sub 2}WO{sub 6} nanoflakes and nanooctahedron crystals of Bi{sub 3.84}W{sub 0.16}O{sub 6.24} were prepared. The growth mechanisms of Bi{sub 2}WO{sub 6} and Bi{sub 3.84}W{sub 0.16}O{sub 6.24} were attributed to the different precipitation ability and solubility of H{sub 2}WO{sub 4} and Bi(OH){sub 3} in precursor suspensions with various pH. The photocatalytic evaluation, via the decomposition of Rhodamine B (RhB) under visible light irradiation ({lambda}>420 nm), reveals that nanocrystalline Bi{sub 2}WO{sub 6} samples obtained in different condition exhibit different photocatalytic activities which depend on pH value of the precursor suspensions.

  7. Oxidation mechanism of formic acid on the bismuth adatom-modified Pt(111) surface.

    PubMed

    Perales-Rondón, Juan Victor; Ferre-Vilaplana, Adolfo; Feliu, Juan M; Herrero, Enrique

    2014-09-24

    In order to improve catalytic processes, elucidation of reaction mechanisms is essential. Here, supported by a combination of experimental and computational results, the oxidation mechanism of formic acid on Pt(111) electrodes modified by the incorporation of bismuth adatoms is revealed. In the proposed model, formic acid is first physisorbed on bismuth and then deprotonated and chemisorbed in formate form, also on bismuth, from which configuration the C-H bond is cleaved, on a neighbor Pt site, yielding CO2. It was found computationally that the activation energy for the C-H bond cleavage step is negligible, which was also verified experimentally. PMID:25188779

  8. Investigation of solution-processed bismuth-niobium-oxide films

    SciTech Connect

    Inoue, Satoshi; Ariga, Tomoki; Matsumoto, Shin; Onoue, Masatoshi; Miyasako, Takaaki; Tokumitsu, Eisuke; Shimoda, Tatsuya; Chinone, Norimichi; Cho, Yasuo

    2014-10-21

    The characteristics of bismuth-niobium-oxide (BNO) films prepared using a solution process were investigated. The BNO film annealed at 550°C involving three phases: an amorphous phase, Bi₃NbO₇ fluorite microcrystals, and Nb-rich cubic pyrochlore microcrystals. The cubic pyrochlore structure, which was the main phase in this film, has not previously been reported in BNO films. The relative dielectric constant of the BNO film was approximately 140, which is much higher than that of a corresponding film prepared using a conventional vacuum sputtering process. Notably, the cubic pyrochlore microcrystals disappeared with increasing annealing temperature and were replaced with triclinic β-BiNbO₄ crystals at 590°C. The relative dielectric constant also decreased with increasing annealing temperature. Therefore, the high relative dielectric constant of the BNO film annealed at 550°C is thought to result from the BNO cubic pyrochlore structure. In addition, the BNO films annealed at 500°C contained approximately 6.5 atm.% carbon, which was lost at approximately 550°C. This result suggests that the carbon in the BNO film played an important role in the formation of the cubic pyrochlore structure.

  9. Investigation of solution-processed bismuth-niobium-oxide films

    NASA Astrophysics Data System (ADS)

    Inoue, Satoshi; Ariga, Tomoki; Matsumoto, Shin; Onoue, Masatoshi; Miyasako, Takaaki; Tokumitsu, Eisuke; Chinone, Norimichi; Cho, Yasuo; Shimoda, Tatsuya

    2014-10-01

    The characteristics of bismuth-niobium-oxide (BNO) films prepared using a solution process were investigated. The BNO film annealed at 550 °C involving three phases: an amorphous phase, Bi3NbO7 fluorite microcrystals, and Nb-rich cubic pyrochlore microcrystals. The cubic pyrochlore structure, which was the main phase in this film, has not previously been reported in BNO films. The relative dielectric constant of the BNO film was approximately 140, which is much higher than that of a corresponding film prepared using a conventional vacuum sputtering process. Notably, the cubic pyrochlore microcrystals disappeared with increasing annealing temperature and were replaced with triclinic β-BiNbO4 crystals at 590 °C. The relative dielectric constant also decreased with increasing annealing temperature. Therefore, the high relative dielectric constant of the BNO film annealed at 550 °C is thought to result from the BNO cubic pyrochlore structure. In addition, the BNO films annealed at 500 °C contained approximately 6.5 atm. % carbon, which was lost at approximately 550 °C. This result suggests that the carbon in the BNO film played an important role in the formation of the cubic pyrochlore structure.

  10. Redox-induced enhancement in interfacial capacitance of the titania nanotube/bismuth oxide composite electrode.

    PubMed

    Sarma, Biplab; Jurovitzki, Abraham L; Smith, York R; Mohanty, Swomitra K; Misra, Mano

    2013-03-13

    Bismuth oxide (Bi2O3) decorated titania nanotube array (T-NT) composite materials were synthesized by a simple, yet versatile electrodeposition method. The effects of deposition current density and time on morphology evolution of the bismuth oxide phase were analyzed. It was found that an optimum deposition condition in terms of current density and time could be reached to achieve uniform and equiaxed crystal morphology of the deposited oxide phase. The morphology, shape, size distribution, and crystal structure of the bismuth oxide phase were evaluated using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopic techniques. The electrochemical capacitance of the T-NT/Bi2O3 composites was studied by conducting cyclic voltammetry and galvanostatic charge-discharge experiments. These studies indicated that the capacitance behavior of the composite material was dependent on the morphology and distribution of the bismuth oxide phase. The capacitance was greatly enhanced for the composite having equiaxed and uniformly distributed bismuth oxide particles. The maximum interfacial capacitance achieved in this study was approximately 430 mF cm(-2). Galvanostatic charge-discharge experiments conducted on the composite materials suggested stable capacitance behavior together with excellent capacitance retention even after 500 cycles of continuous charge-discharge operation. PMID:23414084

  11. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect

    Kovačević, Goran Pivac, Branko

    2014-01-28

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  12. Structure and resistivity of bismuth nanobelts in situ synthesized on silicon wafer through an ethanol-thermal method

    NASA Astrophysics Data System (ADS)

    Gao, Zheng; Qin, Haiming; Yan, Tao; Liu, Hong; Wang, Jiyang

    2011-12-01

    Bismuth nanobelts in situ grown on a silicon wafer were synthesized through an ethanol-thermal method without any capping agent. The structure of the bismuth belt-silicon composite nanostructure was characterized by scanning electron microscope, energy-dispersive X-ray spectroscopy, and high resolution transmission electron microscope. The nanobelt is a multilayered structure 100-800 nm in width and over 50 μm in length. One layer has a thickness of about 50 nm. A unique sword-like nanostructure is observed as the initial structure of the nanobelts. From these observations, a possible growth mechanism of the nanobelt is proposed. Current-voltage property measurements indicate that the resistivity of the nanobelts is slightly larger than that of the bulk bismuth material.

  13. Three-dimensional self-assembled hierarchical architectures of gamma-phase flowerlike bismuth oxide.

    PubMed

    Tseng, Teng-Kuan; Choi, Jihun; Jung, Doh-Won; Davidson, Mark; Holloway, Paul H

    2010-04-01

    Three-dimensional (3D) self-assembled hierarchical bismuth oxide architectures were prepared via a solution precipitation synthesis at 85 degrees C in 45 min with the aid of polyethylene glycol-8000 (PEG-8000) as a capping agent. The morphology and crystalline phase evolution was studied versus reaction time and capping agent concentration and interpreted in terms of growth mechanisms. At higher capping agent concentrations, the as-grown 3D hierarchical flowerlike bismuth oxide was crystalline cubic gamma-phase that was previously formed only at temperature > or =640 degrees C. The morphology and crystal structure of these 3D cubic gamma-phase bismuth oxide flowers were not changed with calcining up to 600 degrees C. Photoluminescence was attributed to emission from the Bi(3+) ion by a (3)P(0),(1) --> (1)S(0) transition and from defects. The gamma-phase flowerlike bismuth oxide shows better ion conductivity than that of rodlike bismuth oxide formed without the capping agent. The flowerlike morphology was attributed to modification of the nucleation and growth kinetics by the capping agent. PMID:20423114

  14. Catalytic oxidation of propylene--7. Use of temperature programmed reoxidation to characterize. gamma. -bismuth molybdate

    SciTech Connect

    Uda, T.; Lin, T.T.; Keulks, G.W.

    1980-03-01

    Temperature-programed reoxidation of propylene-reduced ..gamma..-Bi/sub 2/MoO/sub 6/ revealed a low-temperature peak (LTP) at 158/sup 0/C and a high-temperature peak (HTP) at 340/sup 0/C. Auger spectroscopy and X-ray diffraction of reduced and partially or completely reoxidized bismuth molybdate showed that at the LTP, molybdenum(IV) is oxidized to molybdenum(VI) and bismuth, from the metallic state to an oxidation state between zero and three, and that the HTP is associated with the complete oxidation of bismuth to bismuth(III). Activity tests for propylene oxidation showed lower acrolein formation on the catalyst, on which only the LTP was reoxidized than on catalysts on which both peaks were reoxidized. The reoxidation kinetics of the catalyst under conditions corresponding to the LTP showed an activation energy of 22.9 kcal/mole below 170/sup 0/C and near zero above 170/sup 0/C; the break in the Arrhenius plot of reoxidation of the catalyst under conditions corresponding to the HTP was at 400/sup 0/C, with activation energies of 46 kcal/mole at lower and near zero at higher temperatures. Propylene oxidation was apparently rate-limited by the HTP reoxidation process below 400/sup 0/C and by allylic hydrogen abstraction above 400/sup 0/C.

  15. Promotional Effects of Bismuth on the Formation of Platinum-Bismuth Nanowires Network and the Electrocatalytic Activity toward Ethanol Oxidation

    SciTech Connect

    Du, W.; Su, D.; Wang, Q.; Frenkel, A.I.; Teng, X.

    2011-01-11

    Electrocatalytic activities of Pt and their alloys toward small organic molecules oxidation are highly dependent on their morphology, chemical composition, and electronic structure. Here, we report the synthesis of dendrite-like Pt{sub 95}Bi{sub 5}, Pt{sub 83}Bi{sub 17}, and Pt{sub 76}Bi{sub 24} nanowires network with a high aspect ratio (up to 68). The electronic structure and heterogeneous crystalline structure have been studied using combined techniques, including aberration-corrected scanning transmission electron microscopy (STEM) and X-ray absorption near-edge structure (XANES) spectroscopy. Bismuth-oriented attachment growth mechanism has been proposed for the anisotropic growth of Pt/Bi. The electrochemical activities of Pt/Bi nanowires network toward ethanol oxidations have been tested. In particular, the as-made Pt{sub 95}Bi{sub 5} appears to have superior activity toward ethanol oxidation in comparison with the commercial Pt/C catalyst. The reported promotional effect of Bi on the formation of Pt/Bi and electrochemical activities will be important to design effective catalysts for ethanol fuel cell application.

  16. Promotional Effects of Bismuth on the Formation of Platinum-Bismuth Nanowires Network and the Electrocatalytic Activity toward Ethanol Oxidation

    SciTech Connect

    X Teng; W Du; D Su; Q Wang; A Frenkel

    2011-12-31

    Electrocatalytic activities of Pt and their alloys toward small organic molecules oxidation are highly dependent on their morphology, chemical composition, and electronic structure. Here, we report the synthesis of dendrite-like Pt{sub 95}Bi{sub 5}, Pt{sub 83}Bi{sub 17}, and Pt{sub 76}Bi{sub 24} nanowires network with a high aspect ratio (up to 68). The electronic structure and heterogeneous crystalline structure have been studied using combined techniques, including aberration-corrected scanning transmission electron microscopy (STEM) and X-ray absorption near-edge structure (XANES) spectroscopy. Bismuth-oriented attachment growth mechanism has been proposed for the anisotropic growth of Pt/Bi. The electrochemical activities of Pt/Bi nanowires network toward ethanol oxidations have been tested. In particular, the as-made Pt{sub 95}Bi{sub 5} appears to have superior activity toward ethanol oxidation in comparison with the commercial Pt/C catalyst. The reported promotional effect of Bi on the formation of Pt/Bi and electrochemical activities will be important to design effective catalysts for ethanol fuel cell application.

  17. Efficient solar water splitting by enhanced charge separation in a bismuth vanadate-silicon tandem photoelectrode

    NASA Astrophysics Data System (ADS)

    Abdi, Fatwa F.; Han, Lihao; Smets, Arno H. M.; Zeman, Miro; Dam, Bernard; van de Krol, Roel

    2013-07-01

    Metal oxides are generally very stable in aqueous solutions and cheap, but their photochemical activity is usually limited by poor charge carrier separation. Here we show that this problem can be solved by introducing a gradient dopant concentration in the metal oxide film, thereby creating a distributed n+-n homojunction. This concept is demonstrated with a low-cost, spray-deposited and non-porous tungsten-doped bismuth vanadate photoanode in which carrier-separation efficiencies of up to 80% are achieved. By combining this state-of-the-art photoanode with an earth-abundant cobalt phosphate water-oxidation catalyst and a double- or single-junction amorphous Si solar cell in a tandem configuration, stable short-circuit water-splitting photocurrents of ~4 and 3 mA cm-2, respectively, are achieved under 1 sun illumination. The 4 mA cm-2 photocurrent corresponds to a solar-to-hydrogen efficiency of 4.9%, which is the highest efficiency yet reported for a stand-alone water-splitting device based on a metal oxide photoanode.

  18. Efficient solar water splitting by enhanced charge separation in a bismuth vanadate-silicon tandem photoelectrode.

    PubMed

    Abdi, Fatwa F; Han, Lihao; Smets, Arno H M; Zeman, Miro; Dam, Bernard; van de Krol, Roel

    2013-01-01

    Metal oxides are generally very stable in aqueous solutions and cheap, but their photochemical activity is usually limited by poor charge carrier separation. Here we show that this problem can be solved by introducing a gradient dopant concentration in the metal oxide film, thereby creating a distributed n(+)-n homojunction. This concept is demonstrated with a low-cost, spray-deposited and non-porous tungsten-doped bismuth vanadate photoanode in which carrier-separation efficiencies of up to 80% are achieved. By combining this state-of-the-art photoanode with an earth-abundant cobalt phosphate water-oxidation catalyst and a double- or single-junction amorphous Si solar cell in a tandem configuration, stable short-circuit water-splitting photocurrents of ~4 and 3 mA cm(-2), respectively, are achieved under 1 sun illumination. The 4 mA cm(-2) photocurrent corresponds to a solar-to-hydrogen efficiency of 4.9%, which is the highest efficiency yet reported for a stand-alone water-splitting device based on a metal oxide photoanode. PMID:23893238

  19. Method of forming buried oxide layers in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  20. Separation of Americium in High Oxidation States from Curium Utilizing Sodium Bismuthate.

    PubMed

    Richards, Jason M; Sudowe, Ralf

    2016-05-01

    A simple separation of americium from curium would support closure of the nuclear fuel cycle, assist in nuclear forensic analysis, and allow for more accurate measurement of neutron capture properties of (241)Am. Methods for the separation of americium from curium are however complicated and time-consuming due to the similar chemical properties of these elements. In this work a novel method for the separation of americium from curium in nitric acid media was developed using sodium bismuthate to perform both the oxidation and separation. Sodium bismuthate is shown to be a promising material for performing a simple and rapid separation. Curium is more strongly retained than americium on the undissolved sodium bismuthate at nitric acid concentrations below 1.0 M. A separation factor of ∼90 was obtained in 0.1 M nitric acid. This separation factor is achieved within the first minute of contact and is maintained for at least 2 h of contact. Separations using sodium bismuthate were performed using solid-liquid extraction as well as column chromatography. PMID:27079565

  1. Synthesis of α-Bismuth oxide using solution combustion method and its photocatalytic properties

    NASA Astrophysics Data System (ADS)

    Astuti, Y.; Fauziyah, A.; Nurhayati, S.; Wulansari, A. D.; Andianingrum, R.; Hakim, A. R.; Bhaduri, G.

    2016-02-01

    The monoclinic bismuth oxide was prepared by the solution combustion method using bismuthyl nitrate as the raw material and citric acid as fuel. The synthesis process consisted of the formation of a clear transparent solution and the formation of white powder after heating the mixture at 250 °C for 2 hours. The yellow pale crystalline materials were obtained after calcination of the white powder at 600 °C for 80 minutes. Furthermore, the photocatalytic activity of the product was also studied using methyl orange as a model pollutant. The result showed that the coral reef-like bismuth oxide was able to degrade 50 mL methyl orange (5 ppm) by 37.8% within 12 hours irradiation using 75-watt tungsten lamp.

  2. Silicon filaments in silicon oxide for next-generation photovoltaics.

    PubMed

    Cuony, Peter; Alexander, Duncan T L; Perez-Wurfl, Ivan; Despeisse, Matthieu; Bugnon, Gregory; Boccard, Mathieu; Söderström, Thomas; Hessler-Wyser, Aïcha; Hébert, Cécile; Ballif, Christophe

    2012-03-01

    Nanometer wide silicon filaments embedded in an amorphous silicon oxide matrix are grown at low temperatures over a large area. The optical and electrical properties of these mixed-phase nanomaterials can be tuned independently, allowing for advanced light management in high efficiency thin-film silicon solar cells and for band-gap tuning via quantum confinement in third-generation photovoltaics. PMID:22290779

  3. Effect of additions of praseodymium and bismuth oxides on the properties of barium hexaferrites

    SciTech Connect

    Kirichok, P.P.; Garmash, V.Y.; Verezhak, O.F.; Voronina, N.B.

    1985-08-01

    Among oxide permanent magnets, of greatest practical interest are those made of barium hexaferrite. Because of its high constant of uniaxial anisotropy, a barium ferrite can be employed for producing permanent magnets of large coercive force. The formation of important technical properties in barium ferrites is strongly affected by their production technology, in particular, the addition of oxides, such as those or bismuth and some rare-earth elements. The goal of this work was to study the effect of bismuth and praseodymium on the parameters of the static hysteresis loop, magnetic microstructure, and electronic configuration of iron ions in the BaO.nFe/sub 2/O/sub 3/ (5.0 less than or equal tonless than or equal to6.0) system. It is determined that the changes induced in the crystallostructural parameters, magnetic microstructure, and electronic spectrum of a barium ferrite by the addition of praseodymium and bismuth oxides to the ferrite powder charge control to a large extent the formation of the magnetic energy level.

  4. Capacity and cycle-life of batteries using bismuth-bearing oxide

    NASA Astrophysics Data System (ADS)

    Lam, L. T.; Haigh, N. P.; Lim, O. V.; Rand, D. A. J.; Manders, J. E.

    An examination is made of the capacity performance of lead-acid positive electrodes which are prepared from bismuth (Bi)-bearing oxide. This oxide is produced from Pasminco VRLA Refined™ lead which contains 0.05 wt.% Bi. For comparison, benchmark tests are performed on electrodes made from oxide with virtually no bismuth (<0.005 wt.%). The change in capacity is investigated by means of a purpose-built `compression cell'. With this design, the positive active-material is constrained under the action of a desirable, constant force during charge-discharge cycling. In general, the capacity increases with the compressive force. Importantly, the use of Bi-bearing oxide yields higher initial capacity and then a significantly faster rise in capacity to the full value with subsequent cycling. Commercial VRLA batteries made with Bi-bearing oxide exhibit a lower rate of self-discharge than those fabricated with conventional factory oxide. In addition, Bi-bearing batteries provide good cycle-life under the International Electrotechnical Commission (IEC) test.

  5. Influence of the ionization-energy losses of high-energy bismuth ions on the development of helium blisters in silicon

    SciTech Connect

    Reutov, V. F. Dmitriev, S. N.; Sohatsky, A. S.; Zaluzhnyi, A. G.

    2015-10-15

    Understanding the behavior of helium in solids under conditions of intense ionizing radiation is of particular interest in solving many problems of nuclear, fusion, and space materials science and also in microelectronics. The observed effect of suppressing the formation of helium blisters on the surface of helium ion-doped silicon as a result of irradiation with high-energy bismuth ions is reported in this publication. It is suggested that a possible decrease in the concentration of helium atoms in silicon is due to their radiationinduced desorption from the area of doping in terms of the high-impact ionization of bismuth ions.

  6. A Ferroelectric Oxide Made Directly on Silicon

    SciTech Connect

    Warusawithana, M.; Cen, C; Sleasman, C; Woicik, J; Li, Y; Fitting Kourkoutis, L; Klug, J; Li, H; Ryan, P; et. al.

    2009-01-01

    Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering technological advancement. With fundamental limits to this technology close at hand, alternatives to silicon dioxide are being pursued to enable new functionality and device architectures. We achieved ferroelectric functionality in intimate contact with silicon by growing coherently strained strontium titanate (SrTiO{sub 3}) films via oxide molecular beam epitaxy in direct contact with silicon, with no interfacial silicon dioxide. We observed ferroelectricity in these ultrathin SrTiO{sub 3} layers by means of piezoresponse force microscopy. Stable ferroelectric nanodomains created in SrTiO{sub 3} were observed at temperatures as high as 400 kelvin.

  7. Preparation and crystal structure of a new lithium bismuth oxide: LiBiO{sub 3}

    SciTech Connect

    Kumada, N.; Takahashi, N.; Kinomura, N.

    1996-10-01

    A new lithium bismuth oxide was discovered during the investigation of low-temperature hydrothermal reactions of the hydrated sodium bismuth oxide, NaBiO{sub 3} {center_dot} nH{sub 2}O. This lithium bismuth oxide crystallizes in the orthorhombic system with the lattice parameters a = 8.8278(3), b = 4.9135(2), and c = 10.6914(3) {angstrom}, space group Pccn, and Z = 8. The crystal structure was refined using neutron powder diffraction data giving final R factors of R{sub WP} = 10.04, Rp = 7.64, R{sub E} = 3.88, and R{sub 1} = 4.86%. The LiBiO{sub 3} crystal structure is similar to that of LiSbO{sub 3}. Both structures can be considered as based on an array of hexagonally closed packed oxygen atoms with cations occupying two-thirds of the octahedral sites. In both structures, the LiO{sub 6} octahedra share faces to form a continuous string. However, in the LiSbO{sub 3} structure SbO{sub 6} octahedra each share two edges forming a continuous zigzag chain whereas in the LiBiO{sub 3} structure BiO{sub 6} octahedra each share one edge only. Thus, the LiBiO{sub 3} structure also resembles the cubic KBiO{sub 3} structure, both structures being based on a dimer unit of the type Bi{sub 2}O{sub 10} which shares corners forming a network having interstitial alkali cations. On heating to about 300{degrees}C, LiBiO{sub 3} transforms to LiBiO{sub 2} through evolution of oxygen and reduction of Bi{sup 5+} to Bi{sup 3+}.

  8. Effect of Bismuth Oxide on the Microstructure and Electrical Conductivity of Yttria Stabilized Zirconia.

    PubMed

    Liu, Liwei; Zhou, Zheng; Tian, He; Li, Jixue

    2016-01-01

    Bismuth oxide (Bi₂O₃)-doped yttria-stabilized zirconia (YSZ) were prepared via the solid state reaction method. X-ray diffraction and electron diffraction spectroscopy results indicate that doping with 2 mol% Bi₂O₃ and adding 10 mol% yttria result in a stable zirconia cubic phase. Adding Bi₂O₃ as a dopant increases the density of zirconia to above 96%, while reducing its normal sintering temperature by approximately 250 °C. Moreover, electrical impedance analyses show that adding Bi₂O₃ enhances the conductivity of zirconia, improving its capability as a solid electrolyte for intermediate or even lower temperatures. PMID:26985895

  9. Effect of Bismuth Oxide on the Microstructure and Electrical Conductivity of Yttria Stabilized Zirconia

    PubMed Central

    Liu, Liwei; Zhou, Zheng; Tian, He; Li, Jixue

    2016-01-01

    Bismuth oxide (Bi2O3)-doped yttria-stabilized zirconia (YSZ) were prepared via the solid state reaction method. X-ray diffraction and electron diffraction spectroscopy results indicate that doping with 2 mol% Bi2O3 and adding 10 mol% yttria result in a stable zirconia cubic phase. Adding Bi2O3 as a dopant increases the density of zirconia to above 96%, while reducing its normal sintering temperature by approximately 250 °C. Moreover, electrical impedance analyses show that adding Bi2O3 enhances the conductivity of zirconia, improving its capability as a solid electrolyte for intermediate or even lower temperatures. PMID:26985895

  10. Synthesis and photocatalytic properties of bismuth titanate with different structures via oxidant peroxo method (OPM).

    PubMed

    Nogueira, André E; Longo, Elson; Leite, Edson R; Camargo, Emerson R

    2014-02-01

    Bismuth titanate (Bi4Ti3O12 and Bi12TiO20) powders were synthesized by the Oxidant Peroxide Method (OPM), and the effect of temperatures on physical and chemical properties of particles was investigated. The results showed that the morphology and average particle size of materials can be successfully controlled by adjusting the temperature. The samples after calcination were characterized by X-ray diffractometry, transmission electron microscopy, diffuse reflectance spectroscopy, Raman spectroscopy, and BET isotherms. The photocatalytic activity of materials was also evaluated by studying the degradation of 10ppm aqueous rhodamine B dye under ultraviolet radiation. PMID:24267334

  11. Laser induced oxidation and optical properties of bismuth telluride nanoplates

    NASA Astrophysics Data System (ADS)

    Ye, Zhipeng; Sucharitakul, Sukrit; Keiser, Courtney; Kidd, Tim E.; Gao, Xuan P. A.; He, Rui

    2015-03-01

    Bi-Te nanoplates (NPs) grown by low pressure vapor transport method were studied by Raman spectroscopy, atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDS), and Auger electron spectroscopy (AES). We find that the surface of relatively thick (more than tens of nanometers) Bi2Te3 NPs is oxidized in the air and forms a bump under heating with moderate laser power, as revealed by the emergence of Raman lines characteristic of Bi2O3 and TeO2 and characterization by AFM and EDS. Further increase of laser power burns holes on the surface of the NPs. Thin (thicknesses less than 20 nm) NPs with stoichiometry different from Bi2Te3 were also studied. Raman lines from non-stoichiometric NPs are different from those of stoichiometric ones. Thin NPs with the same thickness but different stoichiometries show different color contrast compared to the substrate in the optical image. This indicates that the optical absorption coefficient in thin Bi-Te NPs strongly depends on their stoichiometry. Controlling the stoichiometry in the Bi-Te NP growth is thus very important for their thermoelectric, electronic, and optical device applications. Supported by American Chemical Society Petroleum Research Fund (Grant 53401-UNI10), NSF (No. DMR-1206530, No. DMR-1410496, DMR-1151534), UNI Faculty Summer Fellowship and a UNI capacity building grant.

  12. One-dimensional single-crystalline bismuth oxide micro/nanoribbons: morphology-controlled synthesis and luminescent properties.

    PubMed

    Ling, B; Sun, X W; Zhao, J L; Shen, Y Q; Dong, Z L; Sun, L D; Li, S F; Zhang, S

    2010-12-01

    Based on a facile vapor-phase transport method without any catalyst and template, one-dimensional single-crystalline bismuth oxide (Bi2O3) micro/nanoribbons were fabricated on silicon substrates in large quantities and morphology-controlled fabrication of Bi2O3 was achieved from a single precursor. The widths of Bi2O3 ribbons varied from 0.2 to 20 microm depending on the deposition temperatures. The thickness was in the range of 0.1-2 microm and the length reached several hundred micrometers and even millimeter range. The detailed composition and structural analysis confirmed the single-crystalline nature of alpha-Bi2O3 micro/nanoribbons with monoclinic structure. The photoluminescence spectrum of a single Bi2O3 ribbon showed a broadband emission from 450 to 750 nm in the visible region, consisting two peaks located at 589 and 697 nm which were primarily originated from the impurity ions and crystal defects. A self-catalyzed vapor-solid model was proposed to account for the growth mechanism of Bi2O3 ribbons with different morphologies. PMID:21121334

  13. Polycrystalline bismuth oxide films for development of amperometric biosensor for phenolic compounds.

    PubMed

    Shan, Dan; Zhang, Jing; Xue, Huai-Guo; Zhang, Yong-Cai; Cosnier, Serge; Ding, Shou-Nian

    2009-08-15

    An attractive biocomposite based on polycrystalline bismuth oxide (BiO(x)) film and polyphenol oxidase (PPO) was proposed for the construction of a mediator-free amperometric biosensor for phenolic compounds in environmental water samples. The phenolic biosensor could be easily achieved by casting the biocomposite on the surface of glassy carbon electrode (GCE) via the cross-linking step by glutaraldehyde. The laboratory-prepared bismuth oxide semiconductor was polymorphism. Its hydrophilicity provided a favorable microenvironment for retaining the biological activity of the immobilized protein. The parameters of the fabrication process and the various experimental variables for the enzyme electrode were optimized. The proposed PPO/BiO(x) biosensor provided a linear response to catechol over a concentration range of 4 x 10(-9)M to 1.5 x 10(-5)M with a dramatically developed sensitivity of 11.3 AM(-1)cm(-2) and a detection limit of 1 x 10(-9)M based on S/N=3. In addition, the PPO/BiO(x) biocomposite was characterized by scanning electron microscope (SEM), Fourier transform infrared spectra (FTIR) and rotating disk electrode voltammetry. PMID:19559588

  14. Synthesis of yttria-doped bismuth oxide powder by carbonate coprecipitation for IT-SOFC electrolyte.

    PubMed

    Lee, J G; Kim, S H; Yoon, H H

    2011-01-01

    Yttria-doped bismuth oxide (YBO) powders were synthesized by ammonium carbonate coprecipitation for the preparation of electrolytes of an intermediate temperature solid oxide fuel cell (IT-SOFC). The starting salts were yttrium and bismuth nitrate. The crystal structures and the morphological characteristics of the particles were analyzed by XRD and SEM, respectively. The ionic conductivity of the sintered pellet was measured by an electrochemical impedance analyzer. The size of the calcined YBO powders were in the range of 20-100 nm as measured by SEM images. The YBO pellets had a face-centered cubic structure, and their crystallite size was about 54-88 nm. The ionic conductivity of the YBO pellets sintered at 800 degrees C was observed to be 2.7 x 10(-1) Scm-(-1) at 700 degrees C. The ball-milling of the YBO powder before it was pelletized was found to have been unrequired probably because of a good sinterability of the YBO powders that was prepared via the ammonium carbonate coprecipitation method. The results showed that the ammonium carbonate coprecipitation process could be used as the cost-efficient method of producing YBO electrolytes for IT-SOFC. PMID:21446553

  15. Single crystal functional oxides on silicon

    PubMed Central

    Bakaul, Saidur Rahman; Serrao, Claudy Rayan; Lee, Michelle; Yeung, Chun Wing; Sarker, Asis; Hsu, Shang-Lin; Yadav, Ajay Kumar; Dedon, Liv; You, Long; Khan, Asif Islam; Clarkson, James David; Hu, Chenming; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2016-01-01

    Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon. PMID:26853112

  16. Single crystal functional oxides on silicon

    NASA Astrophysics Data System (ADS)

    Bakaul, Saidur Rahman; Serrao, Claudy Rayan; Lee, Michelle; Yeung, Chun Wing; Sarker, Asis; Hsu, Shang-Lin; Yadav, Ajay Kumar; Dedon, Liv; You, Long; Khan, Asif Islam; Clarkson, James David; Hu, Chenming; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2016-02-01

    Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon.

  17. Single crystal functional oxides on silicon.

    PubMed

    Bakaul, Saidur Rahman; Serrao, Claudy Rayan; Lee, Michelle; Yeung, Chun Wing; Sarker, Asis; Hsu, Shang-Lin; Yadav, Ajay Kumar; Dedon, Liv; You, Long; Khan, Asif Islam; Clarkson, James David; Hu, Chenming; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2016-01-01

    Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon. PMID:26853112

  18. Understanding of the retarded oxidation effects in silicon nanostructures

    NASA Astrophysics Data System (ADS)

    Krzeminski, C. D.; Han, X.-L.; Larrieu, G.

    2012-06-01

    In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings, and nanowires exhibits an extremely different and complex behavior. Such effects have been investigated by the modeling of the mechanical stress generated during the oxidation process explaining the retarded regime. The model describes the oxidation kinetics of silicon nanowires while predicting reasonable and physical stress levels at the silicon/silicon dioxide interface by correctly taking into account the relaxation effects in silicon oxide through plastic flow.

  19. Oxide driven strength evolution of silicon surfaces

    NASA Astrophysics Data System (ADS)

    Grutzik, Scott J.; Milosevic, Erik; Boyce, Brad L.; Zehnder, Alan T.

    2015-11-01

    Previous experiments have shown a link between oxidation and strength changes in single crystal silicon nanostructures but provided no clues as to the mechanisms leading to this relationship. Using atomic force microscope-based fracture strength experiments, molecular dynamics modeling, and measurement of oxide development with angle resolved x-ray spectroscopy we study the evolution of strength of silicon (111) surfaces as they oxidize and with fully developed oxide layers. We find that strength drops with partial oxidation but recovers when a fully developed oxide is formed and that surfaces intentionally oxidized from the start maintain their high initial strengths. MD simulations show that strength decreases with the height of atomic layer steps on the surface. These results are corroborated by a completely separate line of testing using micro-scale, polysilicon devices, and the slack chain method in which strength recovers over a long period of exposure to the atmosphere. Combining our results with insights from prior experiments we conclude that previously described strength decrease is a result of oxidation induced roughening of an initially flat silicon (1 1 1) surface and that this effect is transient, a result consistent with the observation that surfaces flatten upon full oxidation.

  20. Tribochemistry of Bismuth and Bismuth Salts for Solid Lubrication.

    PubMed

    Gonzalez-Rodriguez, Pablo; van den Nieuwenhuijzen, Karin J H; Lette, Walter; Schipper, Dik J; Ten Elshof, Johan E

    2016-03-23

    One of the main trends in the past decades is the reduction of wastage and the replacement of toxic compounds in industrial processes. Some soft metallic particles can be used as nontoxic solid lubricants in high-temperature processes. The behavior of bismuth metal particles, bismuth sulfide (Bi2S3), bismuth sulfate (Bi2(SO4)3), and bismuth oxide (Bi2O3) as powder lubricants was studied in a range of temperatures up to 580 °C. The mechanical behavior was examined using a high-temperature pin-on-disc setup, with which the friction force between two flat-contact surfaces was recorded. The bismuth-lubricated surfaces showed low coefficients of friction (μ ≈ 0.08) below 200 °C. Above the melting temperature of the metal powder at 271 °C, a layer of bismuth oxide developed and the friction coefficient increased. Bismuth oxide showed higher friction coefficients at all temperatures. Bismuth sulfide exhibited partial oxidation upon heating but the friction coefficient decreased to μ ≈ 0.15 above 500 °C, with the formation of bismuth oxide-sulfate, while some bismuth sulfate remained. All surfaces were studied by X-ray diffraction (XRD), confocal microscopy, high-resolution scanning electron microscopy (HR-SEM), and energy-dispersive X-ray spectroscopy (EDS). This study reveals how the partial oxidation of bismuth compounds at high temperatures affects their lubrication properties, depending on the nature of the bismuth compound. PMID:26936490

  1. Characterization of oxide layers grown on D9 austenitic stainless steel in lead bismuth eutectic

    NASA Astrophysics Data System (ADS)

    Hosemann, P.; Hawley, M.; Koury, D.; Swadener, J. G.; Welch, J.; Johnson, A. L.; Mori, G.; Li, N.

    2008-04-01

    Lead bismuth eutectic (LBE) is a possible coolant for fast reactors and targets in spallation neutron sources. Its low melting point, high evaporation point, good thermal conductivity, low reactivity, and good neutron yield make it a safe and high performance coolant in radiation environments. The disadvantage is that it is a corrosive medium for most steels and container materials. This study was performed to evaluate the corrosion behavior of the austenitic stainless steel D9 in oxygen controlled LBE. In order to predict the corrosion behavior of steel in this environment detailed analyses have to be performed on the oxide layers formed on these materials and various other relevant materials upon exposure to LBE. In this study the corrosion/oxidation of D9 stainless steel in LBE was investigated in great detail. The oxide layers formed were characterized using atomic force microscopy, magnetic force microscopy, nanoindentation, and scanning electron microscopy with wavelength-dispersive spectroscopy (WDS) to understand the corrosion and oxidation mechanisms of D9 stainless steel in contact with the LBE. What was previously believed to be a simple double oxide layer was identified here to consist of at least 4 different oxide layers. It was found that the inner most oxide layer takes over the grain structure of what used to be the bulk steel material while the outer oxide layer consists of freshly grown oxides with a columnar structure. These results lead to a descriptive model of how these oxide layers grow on this steel under the harsh environments encountered in these applications.

  2. Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Walder, Cordula; Kellermann, Martin; Wendler, Elke; Rensberg, Jura; von Maydell, Karsten; Agert, Carsten

    2015-02-01

    Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular. In silicon thin-film photovoltaics a multijunction stack with more than two subcells requires a high bandgap amorphous silicon alloy top cell absorber to achieve an optimal bandgap combination. We address the question whether amorphous silicon carbide (a-SiC:H) or amorphous silicon oxide (a-SiO:H) is more suited for this type of top cell absorber. Our single cell results show a better performance of amorphous silicon carbide with respect to fill factor and especially open circuit voltage at equivalent Tauc bandgaps. The microstructure factor of single layers indicates less void structure in amorphous silicon carbide than in amorphous silicon oxide. Yet photoconductivity of silicon oxide films seems to be higher which could be explained by the material being not truly intrinsic. On the other hand better cell performance of amorphous silicon carbide absorber layers might be connected to better hole transport in the cell.

  3. Microanalytical study of defect formation in thin bismuth strontium calcium copper oxide films

    SciTech Connect

    Howell, R.H.; Chaiken, A.; Musket, R.G.

    1994-12-31

    Thin bismuth strontium calcium copper oxide (BSCCO) films and BSCCO/insulator/BSCCO trilayers have been prepared on SrTiO{sub 3} and MgO substrates by evaporation from elemental sources in an ozone atmosphere. Accurate control of the stoichiometry is achieved through monitoring of the atomic fluxes by use of in situ atomic absorption spectroscopy, as well as by reflection high-energy electron diffraction (RHEED). Nevertheless, nanometer-scale second-phase precipitates are sometimes observed. These defects and the flat regions around them have been probed by a variety of microanalytical techniques, including Rutherford backscattering spectroscopy (RBS), particle-induced x-ray emission (PIXE), atomic force microscopy (AFM), microscopic secondary ion mass spectroscopy and transmission electron microscopy (TEM).

  4. Enhanced Visible Light Photocatalytic Activity of Br-Doped Bismuth Oxide Formate Nanosheets.

    PubMed

    Feng, Xin; Cui, Wen; Zhong, Junbo; Liu, Xiaoying; Dong, Fan; Zhang, Yuxin

    2015-01-01

    A facile method was developed to enhance the visible light photocatalytic activity of bismuth oxide formate (BiOCOOH) nanosheets via Br-doping. The as-prepared samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, the Brunauer-Emmett-Teller surface area, UV-vis diffuse reflectance spectroscopy, photoluminescence spectra, and N₂ adsorption-desorption isotherms measurement. The Br- ions replaced the COOH- ions in the layers of BiOCOOH, result in a decreased layer distance. The photocatalytic activity of the as-prepared materials was evaluated by removal of NO in qir at ppb level. The results showed that the Br-doped BiOCOOH nanosheets showed enhanced visible light photocatalytic activtiy with a NO removal of 37.8%. The enhanced activity can be ascribed to the increased visible light absorption and the promoted charge separation. PMID:26506332

  5. Broadly tunable multiwavelength fiber laser with bismuth-oxide EDF using large effective area fiber

    NASA Astrophysics Data System (ADS)

    Ramzia Salem, A. M.; Al-Mansoori, M. H.; Hizam, H.; Mohd Noor, S. B.; Mahdi, M. A.

    2011-02-01

    A multiwavelength laser comb using 2.49 m Bismuth-oxide erbium-doped fiber (Bi-EDF) with different lengths of large effective area fiber (LEAF) in a ring cavity configuration is realized. The Bi-EDF is used as the linear gain medium and LEAF is used as the non-linear gain medium for stimulated Brillouin scattering. Out of the four different lengths, the longest length of 25 km LEAF exhibits the widest tuning range of 44 nm (1576 to 1620 nm) in the L-band at 264 mW pump power and 5 mW Brillouin pump power. In addition, a total of 15 output channels are achieved with total average output power of -8 dBm from this laser structure. All Brillouin Stokes signals exhibit high peak power of above -20 dBm per signal and their optical signal-to-noise ratio of greater than 15 dB.

  6. Silicon Carbide Nanotube Oxidation at High Temperatures

    NASA Technical Reports Server (NTRS)

    Ahlborg, Nadia; Zhu, Dongming

    2012-01-01

    Silicon Carbide Nanotubes (SiCNTs) have high mechanical strength and also have many potential functional applications. In this study, SiCNTs were investigated for use in strengthening high temperature silicate and oxide materials for high performance ceramic nanocomposites and environmental barrier coating bond coats. The high · temperature oxidation behavior of the nanotubes was of particular interest. The SiCNTs were synthesized by a direct reactive conversion process of multiwall carbon nanotubes and silicon at high temperature. Thermogravimetric analysis (TGA) was used to study the oxidation kinetics of SiCNTs at temperatures ranging from 800degC to1300degC. The specific oxidation mechanisms were also investigated.

  7. Functionalised silicon oxide nanoparticles for fingermark detection.

    PubMed

    Moret, Sébastien; Bécue, Andy; Champod, Christophe

    2016-02-01

    Over the past decade, the use of nanotechnology for fingermark detection has been attracting a lot of attention. A substantial number of nanoparticle types has thus been studied and applied with varying success. However, despite all efforts, few publications present clear supporting evidence of their superiority over standard and commonly used techniques. This paper focuses on a rarely studied type of nanoparticles that regroups all desired properties for effective fingermark detection: silicon oxide. These nanoparticles offer optical and surface properties that can be tuned to provide optimal detection. This study explores their potential as a new method for fingermark detection. Detection conditions, outer functionalisations and optical properties were optimised and a first evaluation of the technique is presented. Dye-doped silicon oxide nanoparticles were assessed against a one-step luminescent cyanoacrylate. Both techniques were compared on natural fingermarks from three donors collected on four different non-porous substrates. On average, the two techniques performed similarly but silicon oxide detected marks with a better homogeneity and was less affected by donor inter-variability. The technique remains to be further optimised and yet silicon oxide nanoparticles already show great promises for effective fingermark detection. PMID:26717406

  8. Synthesis and structural characterization of new bismuth (III) nano coordination polymer: A precursor to produce pure phase nano-sized bismuth (III) oxide

    NASA Astrophysics Data System (ADS)

    Hanifehpour, Younes; Mirtamizdoust, Babak; Hatami, Masoud; Khomami, Bamin; Joo, Sang Woo

    2015-07-01

    A novel bismuth (III) nano coordination polymer, {[Bi (pcih)(NO3)2]ṡMeOH}n (1), ("pcih" is the abbreviations of 2-pyridinecarbaldehyde isonicotinoylhydrazoneate) were synthesized by a sonochemical method. The new nano-structure was characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray powder diffraction, elemental analyses and IR spectroscopy. Single crystalline material was obtained using a heat gradient applied to a solution of the reagents. Compound 1 was structurally characterized by single crystal X-ray diffraction. The determination of the structure by single crystal X-ray crystallography shows that the complex forms a zig-zag one dimensional polymer in the solid state and the coordination number of BiIII ions is seven, (BiN3O4), with three N-donor and one O-donor atoms from two "pcih" and three O-donors from nitrate anions. It has a hemidirected coordination sphere. The supramolecular features in these complexes are guided and controlled by weak directional intermolecular interactions. The chains interact with each other through π-π stacking interactions creating a 3D framework. After thermolysis of 1 at 230 °C with oleic acid, pure phase nano-sized bismuth (III) oxide was produced. The morphology and size of the prepared Bi2O3 samples were further observed using SEM.

  9. Stabilization of a subvalent oxidation state of bismuth in N,N-dimethylthioformamide solution: an EXAFS, UV-Vis, IR, and cyclic voltammetry study.

    PubMed

    Lyczko, Krzysztof; Bilewicz, Aleksander; Persson, Ingmar

    2004-11-01

    At the dissolution of anhydrous bismuth(III) trifluoromethanesulfonate in N,N-dimethylthioformamide (DMTF) a deep red-orange complex, lambda(max) = 457 nm, is formed. Bismuth(III) is reduced by the solvent to a low-valent oxidation state stabilized by the sulfur-coordinating solvent DMTF. The obtained complex is weakly solvated seen by a low EXAFS amplitude and a slightly higher absorption energy of the L(III) edge than of the DMTF-solvated bismuth(III) ion. The EXAFS data reveal a dimeric bismuth complex solvated by a single DMTF molecule, which sulfur atom bridges the bismuth atoms. The Bi-S bond distance is 2.543(2) A, and the Bi...Bi distance is 3.929(7) A giving a Bi-S-Bi angle of 101.2(4) degrees. The very low number of coordinated solvent molecule shows that the lone electron pairs of the reduced bismuth ions are stereochemically active. Cyclic voltammetry investigations provide evidence that at least one bismuth atom in the dimer exists in an oxidation state lower than +III, seen by two peaks at approximately -0.36 and -0.57 V in the reduction half-cycle. The absence of EPR signals excludes the presence of bismuth(II) radicals. PMID:15500347

  10. Tailoring Silicon Oxycarbide Glasses for Oxidative Stability

    NASA Technical Reports Server (NTRS)

    Hurwitz, F. I.; Meador, M. A. B.

    1997-01-01

    Blackglas(Trademark) polysiloxane systems produce silicon oxycarbide glasses by pyrolysis in inert atmosphere. The silicon oxycarbides evidence oxidative degradation that limits their lifetime as composite matrices. The present study characterizes bonding rearrangements in the oxycarbide network accompanying increases in pyrolysis temperature. It also addresses the changes in susceptibility to oxidation due to variations in the distribution of Si bonded species obtained under different processing conditions. The study is carried out using Si-29 nuclear magnetic resonance (NMR) spectroscopy and a design of experiments approach to model the oxidation behavior. The NMR results are compared with those obtained by thermogravimetric analysis (TGA). Samples pyrolyzed under inert conditions are compared to those pyrolyzed in reactive ammonia environments.

  11. Silicon carbide-silicon composite having improved oxidation resistance and method of making

    NASA Technical Reports Server (NTRS)

    Luthra, Krishan Lal (Inventor); Wang, Hongyu (Inventor)

    1999-01-01

    A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

  12. Method of making silicon carbide-silicon composite having improved oxidation resistance

    NASA Technical Reports Server (NTRS)

    Luthra, Krishan Lal (Inventor); Wang, Hongyu (Inventor)

    2002-01-01

    A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

  13. Silica substrate or portion formed from oxidation of monocrystalline silicon

    DOEpatents

    Matzke, Carolyn M.; Rieger, Dennis J.; Ellis, Robert V.

    2003-07-15

    A method is disclosed for forming an inclusion-free silica substrate using a monocrystalline silicon substrate as the starting material and oxidizing the silicon substrate to convert it entirely to silica. The oxidation process is performed from both major surfaces of the silicon substrate using a conventional high-pressure oxidation system. The resulting product is an amorphous silica substrate which is expected to have superior etching characteristics for microfabrication than conventional fused silica substrates. The present invention can also be used to convert only a portion of a monocrystalline silicon substrate to silica by masking the silicon substrate and locally thinning a portion the silicon substrate prior to converting the silicon portion entirely to silica. In this case, the silica formed by oxidizing the thinned portion of the silicon substrate can be used, for example, as a window to provide optical access through the silicon substrate.

  14. Electrically tailored resistance switching in silicon oxide

    NASA Astrophysics Data System (ADS)

    Mehonic, Adnan; Cueff, Sébastien; Wojdak, Maciej; Hudziak, Stephen; Labbé, Christophe; Rizk, Richard; Kenyon, Anthony J.

    2012-11-01

    Resistive switching in a metal-free silicon-based material offers a compelling alternative to existing metal oxide-based resistive RAM (ReRAM) devices, both in terms of ease of fabrication and of enhanced device performance. We report a study of resistive switching in devices consisting of non-stoichiometric silicon-rich silicon dioxide thin films. Our devices exhibit multi-level switching and analogue modulation of resistance as well as standard two-level switching. We demonstrate different operational modes that make it possible to dynamically adjust device properties, in particular two highly desirable properties: nonlinearity and self-rectification. This can potentially enable high levels of device integration in passive crossbar arrays without causing the problem of leakage currents in common line semi-selected devices. Aspects of conduction and switching mechanisms are discussed, and scanning tunnelling microscopy (STM) measurements provide a more detailed insight into both the location and the dimensions of the conductive filaments.

  15. Development of tellurium oxide and lead-bismuth oxide glasses for mid-wave infra-red transmission optics

    NASA Astrophysics Data System (ADS)

    Zhou, Beiming; Rapp, Charles F.; Driver, John K.; Myers, Michael J.; Myers, John D.; Goldstein, Jonathan; Utano, Rich; Gupta, Shantanu

    2013-03-01

    Heavy metal oxide glasses exhibiting high transmission in the Mid-Wave Infra-Red (MWIR) spectrum are often difficult to manufacture in large sizes with optimized physical and optical properties. In this work, we researched and developed improved tellurium-zinc-barium and lead-bismuth-gallium heavy metal oxide glasses for use in the manufacture of fiber optics, optical components and laser gain materials. Two glass families were investigated, one based upon tellurium and another based on lead-bismuth. Glass compositions were optimized for stability and high transmission in the MWIR. Targeted glass specifications included low hydroxyl concentration, extended MWIR transmission window, and high resistance against devitrification upon heating. Work included the processing of high purity raw materials, melting under controlled dry Redox balanced atmosphere, finning, casting and annealing. Batch melts as large as 4 kilograms were sprue cast into aluminum and stainless steel molds or temperature controlled bronze tube with mechanical bait. Small (100g) test melts were typically processed in-situ in a 5%Au°/95%Pt° crucible. Our group manufactured and evaluated over 100 different experimental heavy metal glass compositions during a two year period. A wide range of glass melting, fining, casting techniques and experimental protocols were employed. MWIR glass applications include remote sensing, directional infrared counter measures, detection of explosives and chemical warfare agents, laser detection tracking and ranging, range gated imaging and spectroscopy. Enhanced long range mid-infrared sensor performance is optimized when operating in the atmospheric windows from ~ 2.0 to 2.4μm, ~ 3.5 to 4.3μm and ~ 4.5 to 5.0μm.

  16. Electrochemical and surface spectroscopic studies of thin films of bismuth ruthenium oxide (Bi{sub 2}Ru{sub 2}O{sub 7})

    SciTech Connect

    Wideloev, A.; Markovic, N.M.; Ross, P.N. Jr.

    1996-11-01

    Thin, nonporous films of bismuth ruthenium oxide having the pyrochlore crystal structure were prepared by ion beam deposition. The films were grown on metal disks machined to fit into a rotating ring-disk electrode. The electrocatalytic properties of these films for O{sub 2} reduction and evolution were studied in 1 M KOH using the rotating ring-disk electrode method in conjunction with spectroscopic studies of the surfaces before and after electrochemical analysis. The crystalline pyrochlore film was found to be an extremely poor oxygen reduction catalyst, but it could be activated in situ by a procedure that created a highly porous amorphous structure by dissolution of bismuth cations into the solution. The authors found in separate experiments that bismuth ions in solution increased the oxygen reduction activity of a nonporous ruthenium oxide surface, and suggest that there is an analogous effect on the activity of the residual, ruthenium-rich oxide surface by bismuth ions in solution following activation.

  17. Evaluation of radiation dose reduction during CT scans by using bismuth oxide and nano-barium sulfate shields

    NASA Astrophysics Data System (ADS)

    Seoung, Youl-Hun

    2015-07-01

    The purpose of the present study was to evaluate the radiation dose reduction and the image quality during CT scanning by using a new dose reduction fiber sheet (DRFS) with commercially available bismuth shields. These DRFS, were composed of nano-barium sulfate (BaSO4) filling the gaps left by the large bismuth oxide (Bi2O3) particles. The radiation dose was measured five times at a direction of 12 o'clock from the center of the polymethyl methacrylate (PMMA) head phantom by using a CT ionization chamber to calculate an average value. The image quality of measured CT transverse images of the PMMA head phantom depended on the X-ray tube voltage and the type of shielding. Two regions of interest in the CT transverse images were chosen, one from the right area and the other from the left area under the surface of the PMMA head phantom and at a distance of ion chamber holes located in a direction of 12 o'clock from the center of the PMMA head phantom. The results of this study showed that the new DRFS shields could reduce the dosages by 15.61%, 23.05%, and 22.71% at 90 kVp, 120 kVp, and 140 kVp, respectively, than with these of a conventional bismuth shield of the same thickness while maintaining image quality. In addition, the DRFSs produced were about 25% thinness than conventional bismuth. We conclude, therefore, that a DRFS can replace conventional bismuth as a new shield.

  18. Oxidation and ammoxidation of propylene to acrolein and acrylonitrile with bismuth molybdates

    SciTech Connect

    Goddard, W.A.; Allison, J.N.

    1983-09-01

    Under appropriate conditions, bismuth molybdates can catalyze a number of transformations of olefins with selective oxidation being of particular importance. Experimental evidence suggests that the propylene is activated to an allylic species by a site associated with the Bi and that the oxidation step occurs at an Mo site. In order to address the mechanistic steps associated with these Mo sites. The authors discuss the chemistry of terminal oxo and imido groups. They find that for surface sites such as 1 about, 2 about and 3 about, the presence of two double bonds leads to a much more active species than those with a single multiple bond. This leads to a situation similar to that in olefin metathesis by high oxidation state Mo catalysis where the (spectator) oxo group species promotes formation of the metallacycle intermediate by formation of a partial Mo==O triple bond that stabilizes the intermediate. Calculations suggest that the magnitude of the spectator oxo activation is 35 kcal for species such as 1 about and 2 about and that the spectator imido stabilization is 15 kcal for species such as 1 about and 3 about. In addition, the calculations show some special coupling effects of the lone pairs of the Mo==NH groups that affect the geometries and possibly the mechanisms. The results of reactions of various organic substrates with species 1 about-5 about will be used to assess various steps in the mechanisms for 3) and 4), with the emphasis on 4). These results lead to support for the main features in the Barrington-Grasselli mechanism.

  19. Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide

    PubMed Central

    2013-01-01

    Abstract Silicon nanocrystals embedded in a silicon oxide matrix were deposited by radio frequency reactive magnetron sputtering. By means of Raman spectroscopy, we have found that a compressive stress is exerted on the silicon nanocrystal cores. The stress varies as a function of silicon concentration in the silicon-rich silicon oxide layers varies, which can be attributed to changes of nanocrystal environment. By conducting the Fourier transform infrared absorption experiments, we have correlated the stresses exerted on the nanocrystal core to the degree of matrix structural order. PACS 78.67.Bf, 78.67.Pt, 73.63.Bd, 78.47.D, 74.25.Nd PMID:23336352

  20. Easy synthesis of bismuth iron oxide nanoparticles as photocatalyst for solar hydrogen generation from water

    NASA Astrophysics Data System (ADS)

    Deng, Jinyi

    In this study, high purity bismuth iron oxide (BiFeO3/BFO) nanoparticles of size 50-80 nm have been successfully synthesized by a simple sol-gel method using urea and polyvinyl alcohol at low temperature. X-ray diffraction (XRD) measurement is used to optimize the synthetic process to get highly crystalline and pure phase material. Diffuse reflectance ultraviolet-visible (DRUV-Vis) spectrum indicates that the absorption cut-off wavelength of the nanoparticles is about 620 nm, corresponding to an energy band gap of 2.1 eV. Compared to BaTiO3, BFO has a better degradation of methyl orange under light radiation. Also, photocatalytic tests prove this material to be efficient towards water splitting under simulated solar light to generate hydrogen. The simple synthetic methodology adopted in this paper will be useful in developing low-cost semiconductor materials as effective photocatalysts for hydrogen generation. Photocatalytic tests followed by gas chromatography (GC) analyses show that BiFeO3 generates three times more hydrogen than commercial titania P25 catalyst under the same experimental conditions.

  1. Piezoelectric properties of high Curie temperature barium titanate-bismuth perovskite-type oxide system ceramics

    NASA Astrophysics Data System (ADS)

    Wada, Satoshi; Yamato, Keisuke; Pulpan, Petr; Kumada, Nobuhiro; Lee, Bong-Yeon; Iijima, Takashi; Moriyoshi, Chikako; Kuroiwa, Yoshihiro

    2010-11-01

    Barium titanate (BaTiO3, BT)—bismuth magnesium titanium oxide [Bi(Mg0.5Ti0.5)O3, BMT] system ceramics were prepared in an ambient atmosphere in order to increase the Curie temperature (Tc) of BT above 132 °C. A single perovskite phase was observed for BT-BMT ceramics with BMT compositions less than 50 mol %, and their relative densities were greater than 94%. Synchrotron measured x-ray diffraction patterns revealed that all the cations in the ceramics were homogeneously distributed. The temperature dependence of the dielectric properties revealed that the BT-BMT system ceramics exhibited relaxorlike characteristics with a dielectric maximum temperature as high as 360 °C for the 0.5BT-0.5BMT ceramic. The apparent piezoelectric constant (d∗) was 60 pC/N for the 0.4BT-0.6BMT ceramic. Based upon these results, the BT-BMT system shows potential as a new type of lead-free material for high Tc piezoelectric applications.

  2. Boron-Doped Strontium-Stabilized Bismuth Cobalt Oxide Thermoelectric Nanocrystalline Ceramic Powders Synthesized via Electrospinning

    NASA Astrophysics Data System (ADS)

    Koçyiğit, Serhat; Aytimur, Arda; Çınar, Emre; Uslu, İbrahim; Akdemir, Ahmet

    2014-01-01

    Boron-doped strontium-stabilized bismuth cobalt oxide thermoelectric nanocrystalline ceramic powders were produced by using a polymeric precursor technique. The powders were characterized by using x-ray diffraction (XRD), scanning electron microscopy (SEM), and physical properties measurement system (PPMS) techniques. The XRD results showed that these patterns have a two-phase mixture. The phases are face-centered cubic (fcc) and body-centered cubic (bcc). Values of the crystallite size, dislocation density, and microstrain were calculated by using the Scherrer equation. The lattice parameters were calculated for fcc and bcc phases. The SEM results showed that needle-like grains are formed in boron-undoped composite materials, but the needle-like grains changed to the plate-like grains with the addition of boron. The distribution of the nanofiber diameters was calculated and the average diameter of the boron-doped sample is smaller than the boron-undoped one. PPMS values showed that the electrical resistivity values decreased, but the thermal conductivity values, the Seebeck coefficients, and figure of merit ( ZT) increased with increasing temperature for the two samples.

  3. Radiopacity and cytotoxicity of Portland cement containing zirconia doped bismuth oxide radiopacifiers.

    TOXLINE Toxicology Bibliographic Information

    Chen C; Hsieh SC; Teng NC; Kao CK; Lee SY; Lin CK; Yang JC

    2014-02-01

    INTRODUCTION: This study evaluates the radiopacity and cytotoxicity of Portland cements containing a radiopacifier of bismuth oxide (Bi2O3) with yttria-stabilized zirconia (YSZ) dopant.METHODS: Various radiopacifier powders of Bi2O3 with 0%, 15%, 30%, and 100% YSZ dopant were prepared by solid-state reaction at 700°C for 12 hours and characterized by x-ray diffraction. Portland cement/radiopacifier/calcium sulfate (75/20/5) were mixed and set by deionized water. Changes in radiopacity and in vitro cell viability of the hydrated cements were assessed. An average of 6 measured equivalent thickness of aluminum (N = 6) capable of producing similar radiographic density was recorded. The cytotoxicity of each material was determined in MC3T3 E1 cell-based methyl-thiazol-tetrazolium assay.RESULTS: The x-ray diffraction patterns of YSZ doped Bi2O3 are different from those of pure Bi2O3 and YSZ. The cement-containing radiopacifier of Bi2O3/YSZ (85/15) presented significantly greater radiopacity (P < .05) compared with pure Bi2O3. The mouse osteoblastic cell (MC3T3-E1) viabilities of these 2 groups were statistically similar (P < .05).CONCLUSIONS: The radiopacifier of Bi2O3/YSZ (85/15) reveals higher radiopacity but similar cell viability when compared with pure Bi2O3. It shows potential use as an alternative radiopacifier in root-end filling materials.

  4. Enhancing the Performance of the Rechargeable Iron Electrode in Alkaline Batteries with Bismuth Oxide and Iron Sulfide Additives

    SciTech Connect

    Manohar, AK; Yang, CG; Malkhandi, S; Prakash, GKS; Narayanan, SR

    2013-09-07

    Iron-based alkaline rechargeable batteries have the potential of meeting the needs of large-scale electrical energy storage because of their low-cost, robustness and eco-friendliness. However, the widespread commercial deployment of iron-based batteries has been limited by the low charging efficiency and the poor discharge rate capability of the iron electrode. In this study, we have demonstrated iron electrodes containing bismuth oxide and iron sulfide with a charging efficiency of 92% and capable of being discharged at the 3C rate. Such a high value of charging efficiency combined with the ability to discharge at high rates is being reported for the first time. The bismuth oxide additive led to the in situ formation of elemental bismuth and a consequent increase in the overpotential for the hydrogen evolution reaction leading to an increase in the charging efficiency. We observed that the sulfide ions added to the electrolyte and iron sulfide added to the electrode mitigated-electrode passivation and allowed for continuous discharge at high rates. At the 3C discharge rate, a utilization of 0.2 Ah/g was achieved. The performance level of the rechargeable iron electrode demonstrated here is attractive for designing economically-viable large-scale energy storage systems based on alkaline nickel-iron and iron-air batteries. (C) 2013 The Electrochemical Society. All rights reserved.

  5. Brillouin gain-coefficient measurement for bismuth-oxide-based photonic crystal fiber under significant beam reflection at splicing points.

    PubMed

    Lee, J H; Song, K Y; Yoon, H J; Kim, J S; Hasegawa, T; Nagashima, T; Ohara, S; Sugimoto, N

    2009-09-01

    We investigate a six-air-hole bismuth-oxide-based photonic crystal fiber (Bi-PCF) in terms of Brillouin characteristics. One huge challenge in measuring the Brillouin properties of the Bi-PCF is the nonnegligible beam reflection at the splicing points, which can be attributed to the mirroring effect caused by different refractive indices of silica and bismuth fibers. To solve the problem we propose a method that is based on the combination of a pump-probe beat lock-in scheme and a normalized gain curve-fitting technique. Using this method, successful characterization of Brillouin properties for a 1.16-m-long Bi-PCF is experimentally demonstrated. With the measured Brillouin gain coefficient and the known chi((3)) nonlinearity parameters, the Kerr nonlinearity figure-of-merit (F(nl-SBS)), including the stimulated Brillouin scattering-caused pump-power limit, is also estimated for the Bi-PCF. PMID:19724527

  6. Fouling Study of Silicon Oxide Pores Exposed to Tap Water

    SciTech Connect

    Nilsson, J.; Bourcier, W.L.; Lee, J.R.I.; Letant, S.E.; /LLNL, Livermore

    2007-07-12

    We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.

  7. Thermoelectrics from silicon nanoparticles: the influence of native oxide

    NASA Astrophysics Data System (ADS)

    Petermann, Nils; Stötzel, Julia; Stein, Niklas; Kessler, Victor; Wiggers, Hartmut; Theissmann, Ralf; Schierning, Gabi; Schmechel, Roland

    2015-06-01

    Thermoelectric materials were synthesized by current-assisted sintering of doped silicon nanoparticles produced in a microwave-plasma reactor. Due to their affinity to oxygen, the nanoparticles start to oxidize when handled in air and even a thin surface layer of native silicon oxide leads to a significant increase in the oxide volume ratio. This results in a considerable incorporation of oxygen into the sintered pellets, thus affecting the thermoelectric performance. To investigate the necessity of inert handling of the raw materials, the thermoelectric transport properties of sintered nanocrystalline silicon samples were characterized with respect to their oxygen content. An innovative method allowing a quantitative silicon oxide analysis by means of electron microscopy was applied: the contrast between areas of high and low electrical conductivity was attributed to the silicon matrix and silicon oxide precipitates, respectively. Thermoelectric characterization revealed that both, electron mobility and thermal conductivity decrease with increasing silicon oxide content. A maximum figure of merit with zT = 0.45 at 950 °C was achieved for samples with a silicon oxide mass fraction of 9.5 and 21.4% while the sample with more than 25% of oxygen clearly indicates a negative impact of the oxygen on the electron mobility. Contribution to the Topical Issue "Silicon and Silicon-related Materials for Thermoelectricity", edited by Dario Narducci.

  8. The Active Oxidation of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Myers, Dwight L.

    2009-01-01

    The high temperature oxidation of silicon carbide occurs in two very different modes. Passive oxidation forms a protective oxide film which limits further attack of the SiC: SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g) Active oxidation forms a volatile oxide and may lead to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g) Generally passive oxidation occurs at higher oxidant pressures and active oxidation occurs at lower oxidant pressures and elevated temperatures. Active oxidation is a concern for reentry, where the flight trajectory involves the latter conditions. Thus the transition points and rates of active oxidation are a major concern. Passive/active transitions have been studied by a number of investigators. An examination of the literature indicates many questions remain regarding the effect of impurity, the hysteresis of the transition (i.e. the difference between active-to-passive and passive-toactive), and the effect of total pressure. In this study we systematically investigate each of these effects. Experiments were done in both an alumina furnace tube and a quartz furnace tube. It is known that alumina tubes release impurities such as sodium and increase the kinetics in the passive region [1]. We have observed that the active-to-passive transition occurs at a lower oxygen pressure when the experiment is conducted in alumina tubes and the resultant passive silica scale contains sodium. Thus the tests in this study are conducted in quartz tubes. The hysteresis of the transition has been discussed in the detail in the original theoretical treatise of this problem for pure silicon by Wagner [2], yet there is little mention of it in subsequent literature. Essentially Wagner points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. A series of experiments were conducted for active-to-passive and passive-to-active transitions by increasing and decreasing oxygen pressure, respectively. For pure silicon a dramatic difference was found; whereas for SiC the difference was not as great. This may be due to the oxidation of the carbon in SiC which may break down the scale [3]. The third area is the effect of total pressure. In the literature, low oxygen potentials are achieved via either low total pressure or low oxygen pressure in an O2/Ar mixture. Both types of experiments are done in this study and the differences are discussed with regard to the presence or absence of a boundary layer.

  9. Investigating the use of bismuth(V) for the oxidation and subsequent solvent extraction of americium(VI)

    SciTech Connect

    Martin, L.R.; Mincher, B.J.; Schmitt, N.C.

    2008-07-01

    The separation of Am from Cm and the lanthanides is still one of the most complex separations facing analytical chemistry, as well as any proposed advanced fuel cycle. Current research is focused on the oxidation of americium for its selective separation from the trivalent lanthanides and curium. We have already successfully demonstrated that Am oxidized to the hexavalent state using sodium bismuthate at room temperature can be extracted into 30% TBP/dodecane. Its behavior has been demonstrated to be analogous to that of hexavalent uranyl, neptunyl, and plutonyl ions. Using UV-visible spectrophotometry, the mechanism of the oxidation with sodium bismuthate has been probed to identify if it is a suitable reagent for deployment in solvent extraction systems. It has been identified that 97% of the Am is oxidized within the first 5 minutes. Significantly longer periods of time are required to obtain a solution containing greater than 50% Am(VI) limiting the use of Bi(V) for process applications. (authors)

  10. Ultrafast laser functionalized rare phased gold-silicon/silicon oxide nanostructured hybrid biomaterials.

    PubMed

    Premnath, P; Tan, B; Venkatakrishnan, K

    2015-12-01

    We introduce a hybrid nanostructured biomaterial that is a combination of rare phases of immiscible gold and silicon oxide, functionalized via ultrafast laser synthesis. For the first time, we show cancer controlling properties of rare phases of gold silicides, which include Au7Si, Au5Si, Au0.7Si2.3 and Au8Si2. Conventionally, pure forms of gold and silicon/silicon oxide are extensively employed in targeted therapy and drug delivery systems due to their unique properties. While silicon and silicon oxide nanoparticles have shown biocompatibility, gold nanoparticles show conflicting results based on their size and material properties. Several studies have shown that gold and silicon combinations produce cell controlling properties, however, these studies were not able to produce a homogenous combination of gold and silicon, owing to its immiscibility. A homogenous combination of gold and silicon may potentially enable properties that have not previously been reported. We describe rare phased gold-silicon oxide nanostructured hybrid biomaterials and its unique cancer controlling properties, owing to material properties, concentration, size and density. The gold-silicon oxide nanostructured hybrid is composed of individual gold-silicon oxide nanoparticles in various concentrations of gold and silicon, some nanoparticles possess a gold-core and silicon-shell like structure. The individual nanoparticles are bonded together forming a three dimensional nanostructured hybrid. The interaction of the nanostructured hybrids with cervical cancer cells showed a 96% reduction in 24h. This engineered nanostructured hybrid biomaterial presents significant potential due to the combination of immiscible gold and silicon oxide in varying phases and can potentially satiate the current vacuum in cancer therapy. PMID:26539809

  11. Dissolution and oxidation behaviour of various austenitic steels and Ni rich alloys in lead-bismuth eutectic at 520 °C

    NASA Astrophysics Data System (ADS)

    Roy, Marion; Martinelli, Laure; Ginestar, Kevin; Favergeon, Jérôme; Moulin, Gérard

    2016-01-01

    Ten austenitic steels and Ni rich alloys were tested in static lead-bismuth eutectic (LBE) at 520 °C in order to obtain a selection of austenitic steels having promising corrosion behaviour in LBE. A test of 1850 h was carried out with a dissolved oxygen concentration between 10-9 and 5 10-4 g kg-1. The combination of thermodynamic of the studied system and literature results leads to the determination of an expression of the dissolved oxygen content in LBE as a function of temperature: RT(K)ln[O](wt%) = -57584/T(K) -55.876T(K) + 254546 (R is the gas constant in J mol-1 K-1). This relation can be considered as a threshold of oxygen content above which only oxidation is observed on the AISI 316L and AISI 304L austenitic alloys in static LBE between 400 °C and 600 °C. The oxygen content during the test leads to both dissolution and oxidation of the samples during the first 190 h and leads to pure oxidation for the rest of the test. Results of mixed oxidation and dissolution test showed that only four types of corrosion behaviour were observed: usual austenitic steels and Ni rich alloys behaviour including the reference alloy 17Cr-12Ni-2.5Mo (AISI 316LN), the 20Cr-31Ni alloy one, the Si containing alloy one and the Al containing alloy one. According to the proposed criteria of oxidation and dissolution kinetics, silicon rich alloys and aluminum rich alloy presented a promising corrosion behaviour.

  12. Infrared Dielectric Properties of Low-Stress Silicon Oxide

    NASA Technical Reports Server (NTRS)

    Cataldo, Giuseppe; Wollack, Edward J.; Brown, Ari D.; Miller, Kevin H.

    2016-01-01

    Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.

  13. Infrared dielectric properties of low-stress silicon oxide

    NASA Astrophysics Data System (ADS)

    Cataldo, Giuseppe; Wollack, Edward J.; Brown, Ari D.; Miller, Kevin H.

    2016-04-01

    Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.

  14. Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films

    SciTech Connect

    Agarwal, Khushboo; Mehta, B. R.

    2014-08-28

    In this study, the effect of the presence of secondary phases on the structural, electrical, and thermoelectric properties of nanocomposite Bi{sub 2}Te{sub 3} films prepared by co-sputtering of silicon and carbon with Bi{sub 2}Te{sub 3} has been investigated. Growth temperature and the presence of Si and C phase are observed to have a strong effect on the topography and orientation of crystallites. X-ray diffraction study demonstrates that Bi{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}:C samples have preferred (0 0 15) orientation in comparison to Bi{sub 2}Te{sub 3}:Si sample, which have randomly oriented crystallites. Atomic force, conducting atomic force, and scanning thermal microscopy analysis show significant differences in topographical, electrical, and thermal conductivity contrasts in Bi{sub 2}Te{sub 3}:Si and Bi{sub 2}Te{sub 3}:C samples. Due to the randomly oriented crystallites and the presence of Si along the crystallite boundaries, appreciable Seebeck coefficient, higher electrical conductivity, and lower thermal conductivity is achieved resulting in relatively higher value of power factor (3.71 mW K{sup −2} m{sup −1}) for Bi{sub 2}Te{sub 3}:Si sample. This study shows that by incorporating a secondary phase along crystallite boundaries, microstructural, electrical, and thermoelectric properties of the composite samples can be modified.

  15. Silicon radiation detectors with oxide charge state compensation

    NASA Technical Reports Server (NTRS)

    Walton, J. T.; Goulding, F. S.

    1987-01-01

    This paper discusses the use of boron implantation on high resistivity P type silicon before oxide growth to compensate for the presence of charge states in the oxide and oxide/silicon interface. The presence of these charge states on high resistivity P type silicon produces an inversion layer which causes high leakage currents on N(+)P junctions and high surface conductance. Compensating the surface region by boron implantation is shown to result in oxide passivated N(+)P junctions with very low leakage currents and with low surface conductance.

  16. Silicon Metal-Oxide-Semiconductor Quantum Devices

    NASA Astrophysics Data System (ADS)

    Nordberg, Eric

    This thesis presents stable quantum dots in a double gated silicon metal-oxide-semiconductor (MOS) system with an open-lateral geometry. In recent years, semiconductor lateral quantum dots have emerged as an appealing approach to quantum computing. Silicon offers the potential for very long electron spin decoherence times in these dots. Several important steps toward a functioning silicon-based electron spin qubit are presented, including stable Coulomb blockade within a quantum dot, a tunable double quantum dot, and integrated charge sensing. A fabrication process has been created to make low-disorder constrictions on relatively high mobility Si-MOS material and to facilitate essentially arbitrary gate geometries. Within this process, changes in mobility and charge defect densities are measured for critical process steps. This data was used to guide the fabrication of devices culminating, in this work, with a clean, stable quantum dot in a double-gated MOS system. Stable Coulomb-blockade behavior showing single-period conductance oscillations was observed in MOS quantum dots. Measured capacitances within each device and capacitances calculated via modeling are compared, showing that the measured Coulomb-blockade is consistent with a lithographically defined quantum dot, as opposed to a disorder dot within a single constriction. A tunable double dot is also observed. Laterally coupled charge sensing of quantum dots is highly desirable because it enables measurement even when conduction through the quantum dot itself is suppressed. Such charge sensing is demonstrated in this system. The current through a point contact constriction located near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. The coupling capacitance between the charge sensor and the quantum dot is extracted and agrees well with a capacitance model of the integrated sensor and quantum dot system.

  17. Nitric oxide-releasing porous silicon nanoparticles

    NASA Astrophysics Data System (ADS)

    Kafshgari, Morteza Hasanzadeh; Cavallaro, Alex; Delalat, Bahman; Harding, Frances J.; McInnes, Steven JP; Mäkilä, Ermei; Salonen, Jarno; Vasilev, Krasimir; Voelcker, Nicolas H.

    2014-07-01

    In this study, the ability of porous silicon nanoparticles (PSi NPs) to entrap and deliver nitric oxide (NO) as an effective antibacterial agent is tested against different Gram-positive and Gram-negative bacteria. NO was entrapped inside PSi NPs functionalized by means of the thermal hydrocarbonization (THC) process. Subsequent reduction of nitrite in the presence of d-glucose led to the production of large NO payloads without reducing the biocompatibility of the PSi NPs with mammalian cells. The resulting PSi NPs demonstrated sustained release of NO and showed remarkable antibacterial efficiency and anti-biofilm-forming properties. These results will set the stage to develop antimicrobial nanoparticle formulations for applications in chronic wound treatment.

  18. Nitric oxide-releasing porous silicon nanoparticles

    PubMed Central

    2014-01-01

    In this study, the ability of porous silicon nanoparticles (PSi NPs) to entrap and deliver nitric oxide (NO) as an effective antibacterial agent is tested against different Gram-positive and Gram-negative bacteria. NO was entrapped inside PSi NPs functionalized by means of the thermal hydrocarbonization (THC) process. Subsequent reduction of nitrite in the presence of d-glucose led to the production of large NO payloads without reducing the biocompatibility of the PSi NPs with mammalian cells. The resulting PSi NPs demonstrated sustained release of NO and showed remarkable antibacterial efficiency and anti-biofilm-forming properties. These results will set the stage to develop antimicrobial nanoparticle formulations for applications in chronic wound treatment. PMID:25114633

  19. The photorefractive characteristics of bismuth-oxide doped lithium niobate crystals

    SciTech Connect

    Zheng, Dahuai; Yao, Jiaying; Kong, Yongfa; Liu, Shiguo; Zhang, Ling; Chen, Shaolin; Xu, Jingjun

    2015-01-15

    Bismuth-doped lithium niobate (LN:Bi) crystals were grown by Czochralski method and their optical damage resistance, photorefraction, absorption spectra, and defect energy levels were investigated. The experimental results indicate that the photorefractive properties of LN:Bi were enhanced as compared with congruent one, the photorefractive response time was greatly shortened, the photorefractive sensitivity was increased, and the diffraction efficiency of near-stoichiometric LN:Bi (SLN:Bi) reached 31.72% and 49.08% at 532 nm and 488 nm laser, respectively (light intensity of 400 mW/cm{sup 2}). An absorption peak at about 350 nm was observed in the absorption spectrum of LN:Bi. And the defect energy levels simulation indicates new defect levels appear in the forbidden gap of LN:Bi crystals. Therefore bismuth can act as photorefractive centers in LN crystals.

  20. Synthesis and characterization of barium iron oxide and bismuth iron oxide epitaxial films

    NASA Astrophysics Data System (ADS)

    Callender Bennett, Charlee J.

    Much interest exists in perovskite oxide materials and the potential they have in possessing two or more functional properties. In recent years, research on developing new materials with simultaneous ferromagnetic and ferroelectric behavior is the key to addressing possible challenges of new storage information applications. This work examines the fundamental properties of a perovskite oxide, namely BaFeO3, and the investigation of properties of a solid solution between BaFeO3 and BiFeO3. The growth and properties of epitaxial BaFeO3 thin films in the metastable cubic perovskite phase are examined. BaFeO3 films were grown on (012) LaAlO3 and (001) SrTiO3 single crystal substrates by pulsed-laser deposition. X-ray diffraction shows that in situ growth at temperatures between 650-850°C yields an oxygen-deficient BaFeO 2.5+x pseudo-cubic perovskite phase that is insulating and paramagnetic. Magnetization measurements on the asdeposited BaFeO3 films indicate non-ferromagnetic behavior. Annealing these films in 1 atm oxygen ambient converts the films into a pseudo-cubic BaFeO3-x phase that is ferromagnetic with a Curie temperature of 235 K. The observation of ferromagnetism with increasing oxygen content is consistent with superexchange coupling of Fe +4-O-Fe+4. The effects of anneal conditions on BaFeO3 are studied. X-ray characterization, such as reciprocal space maps, show more complex structure for as-grown BaFeO3-x epitaxial films. Epitaxial films grown at low laser energies are highly crystalline. However, they decompose after annealing. When grown at high laser energies, films exhibit complex structure which "cleans up" to a single pseudocubic or tetragonal structure upon ex situ anneal in oxygen ambient environment. Superlattices of BaFeO 3/SrTiO3 were synthesized to explore the nature of "cracking" in annealed BaFeO3, which occurs due to large change in lattice parameter. Magnetization of ex situ annealed BaFeO3-x epitaxial films were examined as a function of applied field direction and was not found to have a change in magnetization with direction of field, despite other research claims. Evidence supports that the unusually weak magnetization of BaFeO3-x is attributed to it being structurally and magnetically disordered. Alloys of a solid-solution between BiFeO3 and BaFeO3-x have been successfully created. X-ray characterizations demonstrate alloy epitaxial films via two-target continuous rotation method have been carried all the way to 80% solubility. In addition, alloy films via solid-solution targets method have been successfully fabricated at near both end-member-points and at the half-point showing that the solubility is possible over the entire range of the solid-solution. Bi0.9Ba0.1FeO3 epitaxial films are of high crystalline quality with rocking curves widths of less than 0.22°, are fully strained, and have highly unusual in-plane and out-of-plane lattice parameters. TEM imaging illustrates that, despite extreme c/a ratios up to 1.26, the films are single phase with sharp interfaces with substrates. SQUID magnetometry was utilized, revealing that the samples are weakly ferromagnetic with a magnetization of 0.2microB per Fe, more than an order of magnitude larger than that of pure BiFeO3. Magnetic hysteresis loops show unfamiliar "pinching," signaling a possible breakdown of the helical magnetic ordering in the fully strained samples. BaFeO3-x, though it can be made ferromagnetic, it is a highly complex material. In studying BaFeO3-x's properties, conclusions can be made that its weak magnetization and unusual structure is highly disordered, magnetically and structurally. The creation of a new solid solution (Bi, Ba)FeO3 by two methods shows that a solid solution between BiFeO3 and BaFeO3-x can be synthesized. Specifically the creation of the alloy Bi0.9Ba0.1FeO3-delta , shows that one can improve on BiFeO3's magnetic properties, and more importantly supports the case that BaFeO3-x exhibits magnetic and structural disorder.

  1. Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix

    NASA Astrophysics Data System (ADS)

    Kole, Arindam; Chaudhuri, Partha

    2014-10-01

    A moderately low temperature (≤800 °C) thermal processing technique has been described for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc-SiC:H) dielectric thin films deposited by plasma enhanced chemical vapour deposition (PECVD) process. The nanocrystalline silicon grains (nc-Si) present in the as deposited films were initially enhanced by aluminium induced crystallization (AIC) method in vacuum at a temperature of Tv = 525 °C. The samples were then stepwise annealed at different temperatures Ta in air ambient. Analysis of the films by FTIR and XPS reveal a rearrangement of the μc-SiC:H network has taken place with a significant surface oxidation of the nc-Si domains upon annealing in air. The nc-Si grain size (DXRD) as calculated from the XRD peak widths using Scherrer formula was found to decrease from 7 nm to 4 nm with increase in Ta from 250 °C to 800 °C. A core shell like structure with the nc-Si as the core and the surface oxide layer as the shell can clearly describe the situation. The results indicate that with the increase of the annealing temperature in air the oxide shell layer becomes thicker and the nc-Si cores become smaller until their size reduced to the order of the Si-QDs. Quantum confinement effect due to the SiO covered nc-Si grains of size about 4 nm resulted in a photoluminescence peak due to the Si QDs with peak energy at 1.8 eV.

  2. Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix

    SciTech Connect

    Kole, Arindam; Chaudhuri, Partha

    2014-10-15

    A moderately low temperature (≤800 °C) thermal processing technique has been described for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc-SiC:H) dielectric thin films deposited by plasma enhanced chemical vapour deposition (PECVD) process. The nanocrystalline silicon grains (nc-Si) present in the as deposited films were initially enhanced by aluminium induced crystallization (AIC) method in vacuum at a temperature of T{sub v} = 525 °C. The samples were then stepwise annealed at different temperatures T{sub a} in air ambient. Analysis of the films by FTIR and XPS reveal a rearrangement of the μc-SiC:H network has taken place with a significant surface oxidation of the nc-Si domains upon annealing in air. The nc-Si grain size (D{sub XRD}) as calculated from the XRD peak widths using Scherrer formula was found to decrease from 7 nm to 4 nm with increase in T{sub a} from 250 °C to 800 °C. A core shell like structure with the nc-Si as the core and the surface oxide layer as the shell can clearly describe the situation. The results indicate that with the increase of the annealing temperature in air the oxide shell layer becomes thicker and the nc-Si cores become smaller until their size reduced to the order of the Si-QDs. Quantum confinement effect due to the SiO covered nc-Si grains of size about 4 nm resulted in a photoluminescence peak due to the Si QDs with peak energy at 1.8 eV.

  3. Improved Retention Characteristic in Polycrystalline Silicon-Oxide-Hafnium Oxide-Oxide-Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride

    NASA Astrophysics Data System (ADS)

    Hsieh, Chih Ren; Lai, Chiung Hui; Lin, Bo Chun; Zheng, Yuan Kai; Chung Lou, Jen; Lin, Gray

    2011-03-01

    In this paper, we present a simple novel process for forming a robust and reliable oxynitride dielectric with a high nitrogen content. It is highly suitable for n-channel metal-oxide-semiconductor field-effect transistor (nMOSFETs) and polycrystalline silicon-oxide-hafnium oxide-oxide-silicon (SOHOS)-type memory applications. The proposed approach is realized by using chemical oxide with ammonia (NH3) nitridation followed by reoxidation with oxygen (O2). The novel oxynitride process is not only compatible with the standard complementary metal-oxide-semiconductor (CMOS) process, but also can ensure the improvement of flash memory with low-cost manufacturing. The characteristics of nMOSFETs and SOHOS-type nonvolatile memories (NVMs) with a robust oxynitride as a gate oxide or tunnel oxide are studied to demonstrate their advantages such as the retardation of the stress-induced trap generation during constant-voltage stress (CVS), the program/erase behaviors, cycling endurance, and data retention. The results indicate that the proposed robust oxynitride is suitable for future nonvolatile flash memory technology application.

  4. Indium oxide/n-silicon heterojunction solar cells

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  5. Research on silicon microchannel arrays oxide insulation technology

    NASA Astrophysics Data System (ADS)

    Wu, Ke-xin; Duanmu, Qingduo; Wang, Guozheng; Yang, Ji-kai; Kou, Yang-qiang

    2015-03-01

    Silicon microchannel plates (Si-MCP) is widely used in the photomultiplier, night vision, X- ray intensifier and other areas. In order to meet the requirements of high voltage electron multiplier, Si-MCP need to prepare a layer of silicon dioxide in the microchannel to improve the insulating properties. There are many methods for preparing SiO2 layer, such as thermal growth, magnetron sputtering method and chemical vapor deposition etc. The thermal oxidation method is often used for preparation of insulating layer that it grows film thickness uniformity, compact structure, simple process and so on. There will be bending deformation phenomenon of silicon microchannel arrays in high temperature oxidation process. The warpage of Si-MCP has brought great for difficulties of subsequent processing. Silicon crystals has the properties of plastic deformation at high temperature, this article take full advantage of this properties by which the already bending deformation of silicon microchannel arrays can be restored to flat.

  6. One-step synthesis of bismuth molybdate catalysts via flame spray pyrolysis for the selective oxidation of propylene to acrolein.

    PubMed

    Schuh, K; Kleist, W; Høj, M; Trouillet, V; Jensen, A D; Grunwaldt, J-D

    2014-12-18

    Flame spray pyrolysis (FSP) of Bi(III)- and Mo(VI)-2-ethylhexanoate dissolved in xylene resulted in various nanocrystalline bismuth molybdate phases depending on the Bi/Mo ratio. Besides α-Bi2Mo3O12 and γ-Bi2MoO6, FSP gave direct access to the metastable β-Bi2Mo2O9 phase with high surface area (19 m(2) g(-1)). This phase is normally only obtained at high calcination temperatures (>560 °C) resulting in lower surface areas. The β-phase was stable up to 400 °C and showed superior catalytic performance compared to α- and γ-phases in selective oxidation of propylene to acrolein at temperatures relevant for industrial applications (360 °C). PMID:25350295

  7. Oxidation study of silicon nanoparticle thin films on HOPG

    NASA Astrophysics Data System (ADS)

    Klauser, F.; Stijepovic, R.; Endstrasser, N.; Jaksch, S.; Memmel, N.; Scheier, P.

    2009-10-01

    Thin films of silicon nanoparticles (diameter 5-10 nm) were deposited on highly oriented pyrolytic graphite (HOPG) by low-pressure DC magnetron sputtering. The effect of different room-temperature oxidation techniques was investigated using XPS sputter-depth profiling. Both oxygen treatment during deposition (using an argon-oxygen mixture in the sputter gas) as well as post-deposition oxidation techniques (exposure to oxygen plasma beam, ambient air conditions) were studied. In all cases oxidation was found to involve the whole film down to the film/substrate interface, indicating a network of open pores. Depending on the type of oxidation between 15 and 25 at% of oxygen, mostly associated with low oxidation states of silicon, were detected in the interior of the film and attributed to oxidized surfaces of the individual silicon nanoparticles. The highest oxygen concentrations were found at the very film surface, reaching levels of 25-30% for films exposed to air or prepared by reactive magnetron sputtering. For the oxygen plasma-treated films even oxygen surface concentrations around 45% and fully oxidized silicon (i.e., SiO 2) were achieved. At the Si/HOPG interface formation of silicon carbide was observed due to intermixing induced by Ar-ion beam used for sputter-depth profiling.

  8. Integration of functional complex oxide nanomaterials on silicon

    NASA Astrophysics Data System (ADS)

    Vila-Fungueirio, Jose Manuel; Bachelet, Romain; Saint-Girons, Guillaume; Gendry, Michel; Gich, Marti; Gazquez, Jaume; Ferain, Etienne; Rivadulla, Francisco; Rodriguez-Carvajal, Juan; Mestres, Narcis; Carretero-Genevrier, Adrian

    2015-06-01

    The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications that can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD) and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE). Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be exposed, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.

  9. Enhancement of Er optical efficiency through bismuth sensitization in yttrium oxide

    NASA Astrophysics Data System (ADS)

    Scarangella, Adriana; Reitano, Riccardo; Franzò, Giorgia; Priolo, Francesco; Miritello, Maria

    2015-07-01

    The process of energy transfer (ET) between optically active ions has been widely studied to improve the optical efficiency of a system for different applications, from lighting and photovoltaics to silicon microphotonics. In this work, we report the influence of Bi on the Er optical emission in erbium-yttrium oxide thin films synthesized by magnetron co-sputtering. We demonstrate that this host permits to well dissolve Er and Bi ions, avoiding their clustering, and thus to stabilize the optically active Er3+ and Bi3+ valence states. In addition, we establish the ET occurrence from Bi3+ to Er3+ by the observed Bi3+ PL emission decrease and the simultaneous Er3+ photoluminescence (PL) emission increase. This was further confirmed by the coincidence of the Er3+ and Bi3+ excitation bands, analyzed by PL excitation spectroscopy. By increasing the Bi content of two orders of magnitude inside the host, though the occurrence of Bi-Bi interactions becomes deleterious for Bi3+ optical efficiency, the ET process between Bi3+ and Er3+ is still prevalent. We estimate ET efficiency of 70% for the optimized Bi:Er ratio equal to 1:3. Moreover, we have demonstrated to enhance the Er3+ effective excitation cross section by more than three orders of magnitude with respect to the direct one, estimating a value of 5.3 × 10-18 cm2, similar to the expected Bi3+ excitation cross section. This value is one of the highest obtained for Er in Si compatible hosts. These results make this material very promising as an efficient emitter for Si-compatible photonics devices.

  10. Aspects of selective oxidation and ammoxidation mechanisms over bismuth molybdate catalysts--2. Allyl alcohol as a probe for the allylic intermediate

    SciTech Connect

    Burrington, J.D.; Kartisek, C.T.; Grasselli, R.K.

    1980-05-01

    Pulse reactor experiments were conducted on the reactions of unlabeled or deuterium- or oxygen-18-labeled allyl alcohols over molybdenum trioxide and various bismuth molybdates in the absence or presence of oxygen and ammonia. The allyl alcohol apparently adsorbed on oxidation sites to form acrolein via allyl molybdates, and on Broensted acid sites to form diallyl ether via an allyl carbonium ion. The bismuth enhanced ..cap alpha..-hydrogen abstraction, which was the rate-determining step in the oxidation. The product distributions provided evidence that the selective oxidation of propylene to acrolein proceeds via a m-allyl molybdate which collapses to an O o-allyl molybdate prior to the second hydrogen abstraction, and that the analogous N o-complex in ammoxidation undergoes two hydrogen abstractions to form acrylonitrile. Detailed reaction schemes are developed.

  11. A review of oxide, silicon nitride, and silicon carbide brazing

    SciTech Connect

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed.

  12. Light-induced degradation of native silicon oxide-silicon nitride bilayer passivated silicon

    NASA Astrophysics Data System (ADS)

    Chowdhury, Zahidur R.; Kherani, Nazir P.

    2015-10-01

    This article reports on the effects of aging and light induced degradation of the passivation quality of the interface formed by the crystalline silicon surface and facile grown oxide—SiNx bilayer. Stable passivation quality against aging and light soaking require thicker oxide layers grown at room temperature, suggesting that thicker oxide layers mitigate the migration of hydrogen from the interface and hence the defect density under light soaking. In addition, the stoichiometry of the PECVD SiNx influences the stability of the passivation quality. Specifically, the rate of degradation in passivation quality is observed to correlate with the optical absorption properties of SiNx; the higher the optical absorption the greater the degradation in passivation. This result is attributed to neutralization of the K+ centers in SiNx. Passivation layers with SiNx deposited with 5% silane in nitrogen to ammonia gas ratio of 7 and facile grown native oxide thickness of ˜1 nm resulted in the most stable passivation scheme within the scope of the reported experiments.

  13. Formation of Mosaic Silicon Oxide Structure during Metal-Assisted Electrochemical Etching of Silicon at High Current Density

    NASA Astrophysics Data System (ADS)

    Cao, Dao Tran; Anh, Cao Tuan; Ngan, Luong Truc Quynh

    2016-05-01

    We have used constant-current, metal-assisted electrochemical etching of silicon in HF/H2O2/ethanol electrolyte to fabricate porous silicon. We found that, at large enough current density, the sponge-like porous silicon structure is replaced by a mosaic structure, which includes islands of various shapes emerging between trenches that have been etched downward. Energy-dispersive x-ray analysis showed that the surface of the mosaic pieces was covered with silicon oxide, while little silicon oxide developed on the surface of trenches. We suggest that the appearance of the mosaic structure can be explained by the increase in the oxidation rate of silicon when the anodic current density increases, combined with no change in the dissolution rate of silicon oxide into the solution. Consequently, above a certain value of anodic current density, there is sufficient residual silicon oxide on the etched surface to create a continuous thin film. However, if the silicon oxide layer is too thick (e.g., due to too high anodic current density or too long etching time), it will become cracked (formation of mosaic pieces), likely due to differences in thermal expansion coefficient between the amorphous silicon oxide layer and crystalline silicon substrate. The oxide is cracked at locations with many defects, and the cracks reveal the silicon substrate. Therefore, at the locations where cracks occur, etching will go sideways and downward, creating trenches.

  14. Formation of Mosaic Silicon Oxide Structure during Metal-Assisted Electrochemical Etching of Silicon at High Current Density

    NASA Astrophysics Data System (ADS)

    Cao, Dao Tran; Anh, Cao Tuan; Ngan, Luong Truc Quynh

    2016-03-01

    We have used constant-current, metal-assisted electrochemical etching of silicon in HF/H2O2/ethanol electrolyte to fabricate porous silicon. We found that, at large enough current density, the sponge-like porous silicon structure is replaced by a mosaic structure, which includes islands of various shapes emerging between trenches that have been etched downward. Energy-dispersive x-ray analysis showed that the surface of the mosaic pieces was covered with silicon oxide, while little silicon oxide developed on the surface of trenches. We suggest that the appearance of the mosaic structure can be explained by the increase in the oxidation rate of silicon when the anodic current density increases, combined with no change in the dissolution rate of silicon oxide into the solution. Consequently, above a certain value of anodic current density, there is sufficient residual silicon oxide on the etched surface to create a continuous thin film. However, if the silicon oxide layer is too thick (e.g., due to too high anodic current density or too long etching time), it will become cracked (formation of mosaic pieces), likely due to differences in thermal expansion coefficient between the amorphous silicon oxide layer and crystalline silicon substrate. The oxide is cracked at locations with many defects, and the cracks reveal the silicon substrate. Therefore, at the locations where cracks occur, etching will go sideways and downward, creating trenches.

  15. Nanostructured bismuth vanadate-based materials for solar-energy-driven water oxidation: a review on recent progress

    NASA Astrophysics Data System (ADS)

    Huang, Zhen-Feng; Pan, Lun; Zou, Ji-Jun; Zhang, Xiangwen; Wang, Li

    2014-11-01

    Water oxidation is the key step for both photocatalytic water splitting and CO2 reduction, but its efficiency is very low compared with the photocatalytic reduction of water. Bismuth vanadate (BiVO4) is the most promising photocatalyst for water oxidation and has become a hot topic for current research. However, the efficiency achieved with this material to date is far away from the theoretical solar-to-hydrogen conversion efficiency, mainly due to the poor photo-induced electron transportation and the slow kinetics of oxygen evolution. Fortunately, great breakthroughs have been made in the past five years in both improving the efficiency and understanding the related mechanism. This review is aimed at summarizing the recent experimental and computational breakthroughs in single crystals modified by element doping, facet engineering, and morphology control, as well as macro/mesoporous structure construction, and composites fabricated by homo/hetero-junction construction and co-catalyst loading. We aim to provide guidelines for the rational design and fabrication of highly efficient BiVO4-based materials for water oxidation.

  16. Multiwavelength L-band fiber laser with bismuth-oxide EDF and photonic crystal fiber

    NASA Astrophysics Data System (ADS)

    Ramzia Salem, A. M.; Al-Mansoori, M. H.; Hizam, H.; Mohd Noor, S. B.; Abu Bakar, M. H.; Mahdi, M. A.

    2011-05-01

    A multiwavelength laser comb using a bismuth-based erbium-doped fiber and 50 m photonic crystal fiber is demonstrated in a ring cavity configuration. The fiber laser is solely pumped by a single 1455 nm Raman pump laser to exploit its higher power delivery compared to that of a single-mode laser diode pump. At 264 mW Raman pump power and 1 mW Brillouin pump power, 38 output channels in the L-band have been realized with an optical signal-to-noise ratio above 15 dB and a Stokes line spacing of 0.08 nm. The laser exhibits a tuning range of 12 nm and produces stable Stokes lines across the tuning range between Brillouin pump wavelengths of 1603 nm and 1615 nm.

  17. Silicon oxide nanowires: facile and controlled large area fabrication of vertically oriented silicon oxide nanowires for photoluminescence and sensor applications.

    PubMed

    Alabi, Taiwo R; Yuan, Dajun; Bucknall, David; Das, Suman

    2013-09-25

    We describe a technique for the fabrication of dense and patterned arrays of aligned silicon oxide nanowires for applications in surface modification, optoelectronic, and electromechanical based devices. Conventional techniques for the fabrication of silicon oxide nanowires based on the vapor-liquid-solid (VLS) chemical vapor deposition (CVD) processes involve the use of high temperatures and catalysts. We demonstrate a technique that extends the use of a plasma thermal reactive ion etching for the fabrication of aligned silicon oxide nanowires with aspect ratios extending up to 20 and lengths exceeding 1 μm. The process incorporates phase separated PS-b-P4VP block copolymer loaded with an iron salt. The iron salt preferentially segregates into the P4VP layer and during an O2 etch is not removed but forms a hexagonally packed array on the silicon oxide substrate. Further etching with CHF3/O2 gas mixture over time can generate nanodots, to nanopillars, and then nanowires of silicon oxide. The photoluminescence property of the as-fabricated nanowire arrays as well as the parasitic ferromagnetic effect from the iron oxide-tipped section of the wires resulting in coalescence under an scanning electron microscope (SEM) are demonstrated. This technique is simpler compared to existing VLS fabrication approaches and can be used for the direct fabrication of patterned arrays of nanowires when a laser interference ablation step is incorporated into the fabrication procedure. PMID:23915216

  18. First stages of silicon oxidation with the activation relaxation technique

    NASA Astrophysics Data System (ADS)

    Ganster, Patrick; Béland, Laurent Karim; Mousseau, Normand

    2012-08-01

    Using the art nouveau method, we study the initial stages of silicon oxide formation. After validating the method's parameters with the characterization of point defects diffusion mechanisms in pure Stillinger-Weber silicon, which allows us to recover some known results and to detail vacancy and self-interstitial diffusion paths, the method is applied onto a system composed of an oxygen layer deposited on a silicon substrate. We observe the oxygen atoms as they move rapidly into the substrate. From these art nouveau simulations, we extract the energy barriers of elementary mechanisms involving oxygen atoms and leading to the formation of an amorphouslike silicon oxide. We show that the kinetics of formation can be understood in terms of the energy barriers between various coordination environments.

  19. Infrared characterization of UV laser-induced silicon oxide films

    NASA Astrophysics Data System (ADS)

    Slaoui, A.; Fogarassy, E.; White, C. W.; Siffert, P.

    1988-11-01

    Oxygen incorporation and subsequent oxidation of ion-implanted silicon have been performed using repetitive pulsed excimer laser irradiation working in the liquid phase regime. The kinetics of the oxidation and the characterization of the grown SiO2 were investigated by infrared spectroscopy. The origin of the broadening of the Si-O stretching band of these oxides grown from the liquid phase is discussed.

  20. Oxidation of mullite-zirconia-alumina-silicon carbide composites

    SciTech Connect

    Baudin, C.; Moya, J.S. )

    1990-05-01

    This paper reports the isothermal oxidation of mullite-alumina-zirconia-silicon carbide composites obtained by reaction sintering studied in the temperature interval 800{degrees} to 1400{degrees}C. The kinetics of the oxidation process was related to the viscosity of the surface glassy layer as well as to the crystallization of the surface film. The oxidation kinetics was halted to T {le} 1300{degrees}C, presumably because of crystallization.

  1. Cycling endurance of silicon{endash}oxide{endash}nitride{endash}oxide{endash}silicon nonvolatile memory stacks prepared with nitrided SiO{sub 2}/Si(100) interfaces

    SciTech Connect

    Habermehl, S.; Nasby, R.D.; Rightley, M.J.

    1999-08-01

    The effects of nitrided SiO{sub 2}/Si(100) interfaces upon cycling endurance in silicon{endash}oxide{endash}nitride{endash}oxide{endash}silicon (SONOS) nonvolatile memory transistors are investigated. Analysis of metal{endash}oxide{endash}silicon field-effect transistor subthreshold characteristics indicate cycling degradation to be a manifestation of interface trap generation at the tunnel oxide/silicon interface. After 10{sup 6} write/erase cycles, SONOS film stacks prepared with nitrided tunnel oxides exhibit enhanced cycling endurance over stacks prepared with non-nitrided tunnel oxides. If the capping oxide is formed by steam oxidation, rather than by deposition, SONOS stacks prepared with non-nitrided tunnel oxides exhibit endurance characteristics similar to stacks with nitrided tunnel oxides. For this case, a mechanism for latent nitridation of the tunnel oxide/silicon interface is proposed. {copyright} {ital 1999 American Institute of Physics.}

  2. Oxidation kinetics of CVD silicon carbide and silicon nitride

    NASA Technical Reports Server (NTRS)

    Fox, Dennis S.

    1992-01-01

    The long-term oxidation behavior of pure, monolithic CVD SiC and Si3N4 is studied, and the isothermal oxidation kinetics of these two materials are obtained for the case of 100 hrs at 1200-1500 C in flowing oxygen. Estimates are made of lifetimes at the various temperatures investigated. Parabolic rate constants for SiC are within an order of magnitude of shorter exposure time values reported in the literature. The resulting silica scales are in the form of cristobalite, with cracks visible after exposure. The oxidation protection afforded by silica for these materials is adequate for long service times under isothermal conditions in 1-atm dry oxygen.

  3. Temperature-induced phase changes in bismuth oxides and efficient photodegradation of phenol and p-chlorophenol.

    PubMed

    Hu, Yin; Li, Danzhen; Sun, Fuqian; Weng, Yaqing; You, Shengyong; Shao, Yu

    2016-01-15

    A novel, simple and efficient approach for photodegrading phenol and p-chlorophenol, based on BixOy, was reported for the first time. Monoclinic Bi2O4 was prepared by the hydrothermal treatment of NaBiO3·2H2O. A series of interesting phase transitions happened and various bismuth oxides (Bi4O7, β-Bi2O3 and α-Bi2O3) were obtained by sintering Bi2O4 at different temperatures. The results demonstrated that the Bi2O4 and Bi4O7 phase had strong abilities towards the oxidative decomposition of phenol and p-chlorophenol and very high rates of TOC removal were observed. The characterization by XRD and XPS revealed that Bi(4+) in Bi2O4 and Bi(3.5+) in Bi4O7 were reduced to Bi(3+) during the reaction process. Singlet oxygen ((1)O2) was identified as the major reactive species generated by Bi2O4 and Bi4O7 for the photodegradation of p-chlorophenol and phenol. This novel approach could be used as a highly efficient and green technology for treating wastewaters contaminated by high concentrations of phenol and chlorophenols. PMID:26384997

  4. Visible-light-induced water oxidation by a hybrid photocatalyst consisting of bismuth vanadate and copper(ii) meso-tetra(4-carboxyphenyl)porphyrin.

    PubMed

    Nakashima, Shu; Negishi, Ryo; Tada, Hiroaki

    2016-02-23

    Copper(ii) meso-tetra(4-carboxyphenyl)porphyrin surface-modified monoclinic scheelite bismuth vanadate (CuTCPP/BiVO4) has been synthesized via a two-step route involving chemisorption of TCPP on BiVO4 and successive Cu(ii) ion incorporation into the TCPP, and the surface modification drastically enhances the water oxidation to oxygen (O2) under visible-light irradiation (λ > 430 nm). PMID:26853997

  5. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1993-01-01

    Varistors and/or resistors that includes doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  6. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-07-27

    Varistors and/or resistors are described that include doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  7. Optical properties of Lead bismuth borate glasses doped with neodymium oxide.

    PubMed

    Farouk, M; Abd El-Maboud, A; Ibrahim, M; Ratep, A; Kashif, I

    2015-10-01

    Neodymium doped Lead bismuth borate glasses with the composition of 25PbO-25Bi2O3-50B2O3:xNd2O3, where x=0.5, 1, 1.5 and 2 mol%, have been prepared by melt quenching technique. The behavior of the density and molar volume allows concluding that, addition of Nd2O3 leads to the formation of non-bridging oxygen. Rare earth ion parameters have been calculated and studied. The optical band gap (Eg), and band tails (Ee) were determined. Judd-Ofelt theory for the intensity analysis of induced electric dipole transitions has been applied to the measured oscillator strengths of the absorption bands to determine the three phenomenological intensity parameters Ω2, Ω4 and Ω6 for glass. It was observed that the deviation parameters, rms, was found to be 0.56:0.58(×10(-6)). The estimated Judd-Ofelt parameters were found to be Nd2O3concentration dependent. The hypersensitive transition, (4)I9/2→(4)G5/2+(2)G7/2, is closely related to Ω2 parameter. PMID:25965518

  8. Ion implantation reduces radiation sensitivity of metal oxide silicon /MOS/ devices

    NASA Technical Reports Server (NTRS)

    1971-01-01

    Implanting nitrogen ions improves hardening of silicon oxides 30 percent to 60 percent against ionizing radiation effects. Process reduces sensitivity, but retains stability normally shown by interfaces between silicon and thermally grown oxides.

  9. The Oxidation of CVD Silicon Carbide in Carbon Dioxide

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Nguyen, QuynchGiao N.

    1997-01-01

    Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 100 and 500 hours at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic laws are discussed. Oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants typically found in combustion environments: oxygen and water vapor.

  10. Gated twin-bit silicon-oxide-nitride-oxide-silicon NAND flash memory for high-density nonvolatile memory

    NASA Astrophysics Data System (ADS)

    Kim, Yoon; Shim, Won Bo; Park, Byung-Gook

    2015-06-01

    In this paper, we report the fabrication and analysis of the gated twin-bit NAND flash memory with a nitride charge-trapping layer. This device is based on the recessed channel structure, and it has an additional cut-off gate that enables 2-bit operation. Therefore, the density of the array can be doubled without any difficulty in patterning. The fabrication method for gated twin-bit (GTB) silicon-oxide-nitride-oxide-silicon (SONOS) memories and their electrical characteristics are described in this paper. Program/erase characteristics are observed and the 2-bit operation is verified by the forward-reverse reading scheme.

  11. Structural and electrochemical evaluation of bismuth doped lithium titanium oxides for lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Subburaj, T.; Prasanna, K.; Kim, Ki Jae; Ilango, P. Robert; Jo, Yong Nam; Lee, Chang Woo

    2015-04-01

    Micro-sized Li4Ti5-xBixO12 (0 ≤ x ≤ 0.15) materials are synthesized using a simple solid state method in air. The structural, morphological, and electrochemical characteristics of Bi-doped lithium titanates and pristine samples are methodically analyzed by X-ray diffraction (XRD), Raman spectroscopy, field emission-scanning electron microscopy (FE-SEM), and electrochemical impedance spectroscopy (EIS). The XRD and Raman spectroscopy results demonstrate that bismuth-doping do not alter the spinel structure and good crystalline materials are synthesized. The FE-SEM images show that all samples possess the same morphological characteristics, with a particle size distribution of 0.5-1 μm. The electrochemical cycling testing reveals that the Li4Ti4.9Bi0.10O12 sample exhibits discharge capacities of 205.4 mAh g-1, 160.8 mAh g-1, and 135.4 mAh g-1 after 50 cycles at 1C, 5C, and 10C-rates, respectively. The differential capacity curves suggest that the Li4Ti4.9Bi0.10O12 sample has a weaker polarization effect than the other samples. The EIS measurements imply that the Li4Ti4.9Bi0.10O12 sample possesses a high electronic conductivity and lithium ion diffusivity, which demonstrate that this new Li4Ti4.9Bi0.10O12 material would be a good candidate as an anode for lithium ion batteries.

  12. The study of optical band edge property of bismuth oxide nanowires α-Bi2O3.

    PubMed

    Ho, Ching-Hwa; Chan, Ching-Hsiang; Huang, Ying-Sheng; Tien, Li-Chia; Chao, Liang-Chiun

    2013-05-20

    The α-phase Bi(2)O(3) (α-Bi(2)O(3)) is a crucial and potential visiblelight photocatalyst material needless of intentional doping on accommodating band gap. The understanding on fundamental optical property of α-Bi(2)O(3) is important for its extended applications. In this study, bismuth oxide nanowires with diameters from tens to hundreds nm have been grown by vapor transport method driven with vapor-liquid-solid mechanism on Si substrate. High-resolution transmission electron microscopy and Raman measurement confirm α phase of monoclinic structure for the as-grown nanowires. The axial direction for the as-grown nanowires was along < 122 >. The band-edge structure of α-Bi(2)O(3) has been probed experimentally by thermoreflectance (TR) spectroscopy. The direct band gap was determined accurately to be 2.91 eV at 300 K. Temperaturedependent TR measurements of 30-300 K were carried out to evaluate temperature-energy shift and line-width broadening effect for the band edge of α-Bi(2)O(3) thin-film nanowires. Photoluminescence (PL) experiments at 30 and 300 K were carried out to identify band-edge emission as well as defect luminescence for the α-Bi(2)O(3) nanowires. On the basis of experimental analyses of TR and PL, optical characteristics of direct band edge of α-Bi(2)O(3) nanowires have thus been realized. PMID:23736418

  13. High-relative-dielectric-constant bismuth-niobium-oxide films prepared using Nb-rich precursor solution

    NASA Astrophysics Data System (ADS)

    Ariga, Tomoki; Inoue, Satoshi; Matsumoto, Shin; Onoue, Masatoshi; Miyasako, Takaaki; Tokumitsu, Eisuke; Shimoda, Tatsuya

    2015-09-01

    Various ceramic materials have been developed for electronic devices. Bismuth-niobium-oxide (BNO) films prepared by a chemical solution deposition (CSD) method have the cubic pyrochlore phase, high relative dielectric constant, and low tangent loss (tan δ). We found that a BNO cubic pyrochlore crystal was Nb-rich, even though its pyrochlore formula is A2B2O7. The crystallization temperature of BNO increased with increasing Nb ratio. The relative dielectric constants of BNO films were related to the Nb ratio in the precursor solution. The dielectric constant of the BNO films was 250 when the Bi and Nb ratios in BNO precursor solutions were 4 and 6, respectively, and the sintering temperature was 600 °C. In addition, the tan δ was less than 0.01 at 1 kHz, which is higher than the reported values of BNO systems despite using the CSD method. These results show that the properties of BNO films prepared by the CSD method were associated with the Nb ratio in the precursor solution. Furthermore, the dielectric characteristics indicated that the Nb-rich BNO films have potential applications in electronic devices.

  14. Spectroscopic and microscopic investigation of the corrosion of D-9 stainless steel by lead bismuth eutectic (LBE) at elevated temperatures. Initiation of thick oxide formation

    NASA Astrophysics Data System (ADS)

    Johnson, Allen L.; Koury, Dan; Welch, Jenny; Ho, Thao; Sidle, Stacy; Harland, Chris; Hosterman, Brian; Younas, Umar; Ma, Longzhou; Farley, John W.

    2008-06-01

    Corrosion of 316/316L stainless steel by lead-bismuth eutectic (LBE) at elevated temperature was investigated by examination of samples after 1000, 2000, and 3000 h of exposure at 550 °C, using SEM, XPS with sputter depth profiling, and TEM. The process by which localized oxide failure becomes extensive thick oxide formation was investigated. Under our experimental conditions, iron was observed to migrate outward while chromium did not migrate above the original metal surface. The thin oxide layer on the D-9 sample resembled 316L cold-rolled samples, while the thick oxide on D-9 resembled annealed 316L oxide. With continued exposure, thick oxide grew to cover the entire surface.

  15. Tribological interaction between polytetrafluoroethylene and silicon oxide surfaces

    SciTech Connect

    Uçar, A.; Çopuroğlu, M.; Suzer, S.; Baykara, M. Z.; Arıkan, O.

    2014-10-28

    We investigated the tribological interaction between polytetrafluoroethylene (PTFE) and silicon oxide surfaces. A simple rig was designed to bring about a friction between the surfaces via sliding a piece of PTFE on a thermally oxidized silicon wafer specimen. A very mild inclination (∼0.5°) along the sliding motion was also employed in order to monitor the tribological interaction in a gradual manner as a function of increasing contact force. Additionally, some patterns were sketched on the silicon oxide surface using the PTFE tip to investigate changes produced in the hydrophobicity of the surface, where the approximate water contact angle was 45° before the transfer. The nature of the transferred materials was characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). XPS results revealed that PTFE was faithfully transferred onto the silicon oxide surface upon even at the slightest contact and SEM images demonstrated that stable morphological changes could be imparted onto the surface. The minimum apparent contact pressure to realize the PTFE transfer is estimated as 5 kPa, much lower than reported previously. Stability of the patterns imparted towards many chemical washing processes lead us to postulate that the interaction is most likely to be chemical. Contact angle measurements, which were carried out to characterize and monitor the hydrophobicity of the silicon oxide surface, showed that upon PTFE transfer the hydrophobicity of the SiO{sub 2} surface could be significantly enhanced, which might also depend upon the pattern sketched onto the surface. Contact angle values above 100° were obtained.

  16. Silicon-containing ferritic/martensitic steel after exposure to oxygen-containing flowing lead-bismuth eutectic at 450 and 550 °C

    NASA Astrophysics Data System (ADS)

    Schroer, Carsten; Koch, Verena; Wedemeyer, Olaf; Skrypnik, Aleksandr; Konys, Jürgen

    2016-02-01

    A ferritic/martensitic (f/m) steel with 9 and 3 mass% of chromium (Cr) and silicon (Si), respectively, was tested on performance in flowing lead-bismuth eutectic (LBE) at 450 and 550 °C, each at concentrations of solved oxygen of both 10-7 and 10-6 mass%. The 9Cr-3Si steel generally exhibits the same basic corrosion modes as other f/m materials with 9 mass% Cr and typically lower Si content, namely Steel T91. The Si-rich steel shows an overall improved performance in comparison to T91 at 450 °C and 10-7 mass% solved oxygen, but especially at 450 °C and 10-6 mass% solved oxygen. The advantage of higher Si-content in 9Cr steel is less clear at 550 °C. Especially high oxygen content in flowing LBE at 550 °C, between >10-6 mass% and oxygen saturation, seems detrimental for the high-Si material in respect of the initiation and progress of a solution-based corrosion.

  17. Effect of the surface configuration on the oxidation of bismuth nanowire

    SciTech Connect

    Huang, C.C. . E-mail: sceruti@mse.ncku.edu.tw; Fung, K.Z.

    2006-09-14

    Incorporating nanoprocessing into the metal oxidation, it was a facile way to synthesize functional oxide with desired nanostructure. In this work, {delta}-Bi{sub 2}O{sub 3} nanowires were successfully fabricated by the oxidation of electroplated Bi nanowires at 350deg. C. {delta}-Bi{sub 2}O{sub 3} is the high-temperature phase of Bi{sub 2}O{sub 3} and only stable at 723-823deg. C. Partially oxidized nanowires showed core-shell structure composed of metallic Bi and {delta}-Bi{sub 2}O{sub 3}. To investigate the mechanism of oxidation reaction, the Bi/Bi{sub 2}O{sub 3} interface was characterized by high resolution transmission electron microscopy (HRTEM). HRTEM images showed rapid growth of oxide layer on (21-bar 0) plane of rhombohedral Bi metal. The coherency between (102-bar ) of metallic Bi and (100) of cubic Bi{sub 2}O{sub 3} was observed. A schematic model was also used to describe the oxidation process. The coherency Bi and Bi{sub 2}O{sub 3} and the stabilization of high-temperature (fluorite structure) Bi{sub 2}O{sub 3} were also discussed based on this model.

  18. Silicon nanowire circuits fabricated by AFM oxidation nanolithography.

    PubMed

    Martínez, Ramses V; Martínez, Javier; Garcia, Ricardo

    2010-06-18

    We report a top-down process for the fabrication of single-crystalline silicon nanowire circuits and devices. Local oxidation nanolithography is applied to define very narrow oxide masks on top of a silicon-on-insulator substrate. In a plasma etching, the nano-oxide mask generates a nanowire with a rectangular section. The nanowire width coincides with the lateral size of the mask. In this way, uniform and well-defined transistors with channel widths in the 10-20 nm range have been fabricated. The nanowires can be positioned with sub-100 nm lateral accuracy. The transistors exhibit an on/off current ratio of 10(5). The atomic force microscope nanolithography offers full control of the nanowire's shape from straight to circular or a combination of them. It also enables the integration of several nanowires within the same circuit. The nanowire transistors have been applied to detect immunological processes. PMID:20484797

  19. Oxidation Protection of Porous Reaction-Bonded Silicon Nitride

    NASA Technical Reports Server (NTRS)

    Fox, D. S.

    1994-01-01

    Oxidation kinetics of both as-fabricated and coated reaction-bonded silicon nitride (RBSN) were studied at 900 and 1000 C with thermogravimetry. Uncoated RBSN exhibited internal oxidation and parabolic kinetics. An amorphous Si-C-O coating provided the greatest degree of protection to oxygen, with a small linear weight loss observed. Linear weight gains were measured on samples with an amorphous Si-N-C coating. Chemically vapor deposited (CVD) Si3N4 coated RBSN exhibited parabolic kinetics, and the coating cracked severely. A continuous-SiC-fiber-reinforced RBSN composite was also coated with the Si-C-O material, but no substantial oxidation protection was observed.

  20. Photoluminescence of graphene oxide integrated with silicon substrates

    NASA Astrophysics Data System (ADS)

    Casalino, M.; Rea, I.; Sansone, L.; Terracciano, M.; De Stefano, L.; Coppola, G.; Dardano, P.; Giordano, M.; Borriello, A.; Rendina, Ivo

    2015-05-01

    In this work we have investigated the photoluminescence signal emitted by graphene oxide (GO) nanosheets infiltrated in silanized porous silicon (PSi) matrix. We have demonstrated that a strong enhancement of the PL emitted from GO by a factor of almost 2.5 with respect to GO on crystalline silicon can be experimentally measured. This enhancement has been attributed to the high PSi specific area. In addition, we have observed a weak wavelength modulation of GO photoluminescence emission, this characteristic is very attractive and opens new perspectives for GO exploitation in innovative optoelectronic devices and high sensible fluorescent sensors.

  1. Efficient Direct Reduction of Graphene Oxide by Silicon Substrate

    PubMed Central

    Chan Lee, Su; Some, Surajit; Wook Kim, Sung; Jun Kim, Sun; Seo, Jungmok; Lee, Jooho; Lee, Taeyoon; Ahn, Jong-Hyun; Choi, Heon-Jin; Chan Jun, Seong

    2015-01-01

    Graphene has been studied for various applications due to its excellent properties. Graphene film fabrication from solutions of graphene oxide (GO) have attracted considerable attention because these procedures are suitable for mass production. GO, however, is an insulator, and therefore a reduction process is required to make the GO film conductive. These reduction procedures require chemical reducing agents or high temperature annealing. Herein, we report a novel direct and simple reduction procedure of GO by silicon, which is the most widely used material in the electronics industry. In this study, we also used silicon nanosheets (SiNSs) as reducing agents for GO. The reducing effect of silicon was confirmed by various characterization methods. Furthermore, the silicon wafer was also used as a reducing template to create a reduced GO (rGO) film on a silicon substrate. By this process, a pure rGO film can be formed without the impurities that normally come from chemical reducing agents. This is an easy and environmentally friendly method to prepare large scale graphene films on Si substrates. PMID:26194107

  2. Preparation of superconducting thin films of calcium strontium bismuth copper oxides by coevaporation

    SciTech Connect

    Rice, C.E.; Levi, A.F.J.; Fleming, R.M.; Marsh, P.; Baldwin, K.W.; Anzlowar, M.; White, A.E.; Short, K.T.; Nakahara, S.; Stormer, H.L.; and others

    1988-05-23

    Superconducting films of Ca-Sr-Bi-Cu oxides have been prepared by coevaporation of CaF/sub 2/, SrF/sub 2/, Bi, and Cu, followed by post-oxidation in wet O/sub 2/. The films were characterized by four-probe resistivity measurements, Rutherford backscattering, transmission electron microscopy, x-ray diffraction, and Hall measurements. Zero resistance was achieved at approx.80 K, although evidence of traces of superconductivity at higher temperatures was seen in resistivity and Hall data. The critical current at 4.2 K was 1.0 x 10/sup 6/ A cm/sup -2/. The films were epitaxial on <100> and <110> SrTiO/sub 3/ substrates. The electrical and structural properties of the films were insensitive to film composition over a wide range of stoichiometries.

  3. Models and experiments on degradation of oxidized silicon

    NASA Astrophysics Data System (ADS)

    Sah, C. T.

    1990-02-01

    The concepts of electronic and protonic traps are introduced to delineate and classify the fundamental mechanisms of charging, generation, annealing and hydrogenation of electronic or electron and hole traps located in the interfacial (gate-conductor/oxide, oxide/nitride and oxide/silicon), insulator (oxide, nitride and oxynitride) and semiconductor surface layers of silicon MOS transistors and integrated circuits. Two matrix tables, one without tunneling (3 × 3) and one with tunneling (3 × 4) are used to classify the trap charging and electronic injection mechanisms according to the initial and final (band or bound) states of the electronic transition and the energy exchange mechanisms (thermal, optical and Auger-impact). The importance of tunneling to and from traps (TTT) as an oxide charge build-up mechanism is discussed. A theoretical tunneling rate to traps is given showing that traps shallower than about 2 eV from the oxide conduction band edge or 3 eV from the oxide valence band edge cannot be charged by the TTT transitions alone. Experimental examples illustrating the use of these mechanism tables as well as the importance of breaking hydrogen and strained intrinsic bonds by hot electron impact and by thermal hole capture are discussed, including: (i) annealing of the oxide/Si interface traps via hydrogenation during 380C chip bonding and during Fowler-Nordheim tunneling electron injection (FN-TEI) and avalanche electron injection (AEI) stresses, (ii) interface trap generation and positive oxide charge build-up during electron injection via FN-TEI or AEI, and (iii) electrical deactivation of boron and other group-III acceptors (Al, Ga, In) in the silicon surface layer during FNTEI or AEI stresses. Examples at three d.c. bias conditions to delineate the dominant degradation mechanisms in silicon MOS transistors are given showing that trap charging via tunneling (FNTEI, FNTHI and TTT) dominates below about 3.3 V in both n-MOS and p-MOS but trap generation via bond breaking by thermal hole capture may also occur in low voltage p-MOS. Higher than about 10 V, tunneling (FNTEI, FNTHI and TTT) and avalanche injection (AEI and AHI) as well as hydrogen and intrinsic bond-breaking may all be important degradation mechanisms.

  4. Formation of the bismuth strontium calcium copper oxide superconductor from metal-bearing precursors

    NASA Astrophysics Data System (ADS)

    Detrie, Terry James

    This research investigated the formation of the Bi2Sr 2CaCu2O8 (Bi-2212) superconductor from a metal-bearing Bi2O3, Sr, Ca, and Cu precursor powder prepared via powder metallurgy. The optimal milling schedule was determined to be 1 h high-energy vibratory milling of Bi2O3, Sr, and Ca followed by 8 h low-energy rotary-ball milling of Bi2O3-Sr-Ca and Cu. The resulting powder consisted of an intimate mixture of particles less than 20 m m in size. This powder mixture was packed into a silver tube and then drawn and rolled into tapes. Tapes of ˜ 150 m m total thickness could be prepared without appreciable variation in the precursor core thickness (i.e., sausaging). A series of isothermal annealing treatments at 300--400°C, 750°C, and then 860°C were used to oxidize the metallic phases in the core of the tape and to allow for conversion into Bi-2212. In the first oxidation stage, an insufficient supply of O2 for Sr and Ca oxidation would result in a displacement reaction between alkaline earth metal and Bi 2O3. The resulting liquid Bi metal would migrate outward through the silver sheath, forming a Bi-rich scale on tape surface and leaving a Bi-depleted core. The removal of one side of the precursor tape introduced an easy-access path for O2 transport; tapes prepared in this manner did not form a Bi-rich scale. The reaction sequence of metal-bearing precursor to Bi-2212 was investigated. At 350°C the core had reacted with O2 to form simple oxides. The formation of a multicomponent oxide phase, Bi9Sr11Ca 5Ox, was observed to occur at temperatures as low as 350°C. At 650°C, the core consisted of Bi-2201, Bi9Sr11Ca 5Ox, CuO, and a Sr-rich (Sr,Ca)O phase. This phase assemblage remained until 840°C, where Bi-2212 began to form. After only 2 h at 860°C, the tape core was comprised primarily of Bi-2212 (by X-ray diffraction). The formation of multi-component oxide phases at relatively low temperatures and modest times illustrates a primary advantage of using metal-bearing precursors. Metal-precursor derived tapes were melt-textured side-by-side with traditional oxide-powder-in-tube Bi-2212 tapes. The measured critical transport current densities were comparable, thus demonstrating the viability of using metal-bearing precursors in Bi-2212 fabrication.

  5. Athermal silicon microring resonators with titanium oxide cladding.

    PubMed

    Guha, Biswajeet; Cardenas, Jaime; Lipson, Michal

    2013-11-01

    We describe a novel approach for CMOS-compatible passively temperature insensitive silicon based optical devices using titanium oxide cladding which has a negative thermo-optic (TO) effect. We engineer the mode confinement in Si and TiO2 such that positive TO of Si is exactly cancelled out by negative TO of TiO2. We demonstrate robust operation of the resulting device over 35 degrees. PMID:24216877

  6. Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Zatryb, G.; Misiewicz, J.; Wojcik, J.; Wilson, P. R. J.; Mascher, P.

    2012-11-01

    The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature.

  7. Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition.

    PubMed

    Podhorodecki, A; Zatryb, G; Misiewicz, J; Wojcik, J; Wilson, P R J; Mascher, P

    2012-11-30

    The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature. PMID:23110801

  8. Preparation and crystal structures of bismuth technetates: a new metal oxide system.

    PubMed

    Rodriguez, Efrain E; Poineau, Frédéric; Llobet, Anna; Czerwinski, Ken; Seshadri, Ram; Cheetham, Anthony K

    2008-07-21

    Two new oxides have been unambiguously identified as Bi2Tc2O7-delta with delta = 0.14(1) and Bi3TcO8 through X-ray absorption near-edge structure spectroscopy and neutron powder diffraction. The compound Bi2Tc2O7-delta has a cubic pyrochlore-type structure with a = 10.4746(1) A, space group Fd3m (origin choice 2), and Z = 8. The compound Bi3TcO8 is also cubic, a = 11.5749(1) A, space group P2(1)3, Z = 8, and has a fluorite-related crystal structure. In Bi2Tc2O7-delta the Tc(IV) cations are octahedrally coordinated, whereas in Bi3TcO8 the Tc(VII) cations are tetrahedrally coordinated. A third new phase, probably Bi3Tc3O11, could not be obtained pure, but preliminary X-ray powder diffraction data affords a primitive cubic lattice with a = 9.3433(1) A. On the basis of structural similarities between Bi2Tc2O7-delta and closely related oxides, Bi2Tc2O7-delta is expected to be a metallic oxide with Pauli paramagnetism. Electronic structure calculations of both Bi2Tc2O7-delta and Bi3TcO8 further support metallic conductivity in the former and insulating behavior in the latter. The inert pair effect of the Bi cations on the crystal structures of Bi2Tc2O7-delta and Bi3TcO8 is also described. In addition, calculations of the valence electron localization function for Bi2Tc2O7-delta and Bi3TcO8 provide further visualization of the Bi 6s(2) lone pair electrons in the real space of the crystal structures. PMID:18572909

  9. Oxidation induced precipitation in Al implanted epitaxial silicon

    NASA Astrophysics Data System (ADS)

    La Ferla, A.; Galvagno, G.; Giri, P. K.; Franzò, G.; Rimini, E.; Raineri, V.; Gasparotto, A.; Cali, D.

    2000-10-01

    The behavior of Al implanted in silicon has been investigated during thermal oxidation. It has been found that precipitation of Al into Al-O-defect complexes depends on the implant energy, i.e., on the distance of the dopant from the surface. It occurs at 650 keV, but it does not at 2.0 MeV or higher energies. This phenomenon has been explained taking into account the diffusivity of self-interstitials introduced during oxidation, the oxygen present in the Si, the Al concentration, and the annealing out of defects.

  10. Hydrogen passivation and ozone oxidation of silicon surface

    SciTech Connect

    Kurokawa, Akira; Nakamura, Ken; Ichimura, Shingo

    1998-12-31

    The oxidation of H/Si(100) and H/Si(111) with high concentration ozone gas was investigated with X-ray photoelectron spectroscopy (XPS). The ozone oxidation of partially hydride-covered surface was observed. The hydrogen termination reduced the rate of oxygen insertion into silicon backbond. The reduction of oxygen insertion rate by the H-termination for H/Si(100) was larger than that for H/Si(111). The dissociation rate of ozone molecule on H/Si was estimated to be {approx_equal}0.2 with a directional mass analyzer.

  11. Spectroscopic characterization of naturally and chemically oxidized silicon surfaces

    NASA Astrophysics Data System (ADS)

    Tsunoda, Kazuaki; Ohashi, Emiko; Adachi, Sadao

    2003-11-01

    We have determined the thicknesses of naturally and chemically grown oxides on HF-cleaned silicon surfaces in ambient air and in NH4OH/H2O2/H2O solution, respectively, using spectroscopic ellipsometry. The naturally grown oxide thickness versus air-exposure time plots yield a rate constant of 3.5±0.5 Å/decade in ambient air. Chemical oxidation occurs immediately upon immersing the sample in the chemical solution and leaves the sample surface terminated with ˜6 Å of a chemical oxide. Photoreflectance intensity is found to be strongly dependent on such surface processing, and results are explained by the different degree of surface (interface) states.

  12. New perspectives on thermal and hyperthermal oxidation of silicon surfaces

    NASA Astrophysics Data System (ADS)

    Khalilov, Umedjon

    The growth of (ultra)thin silica (SiO2) layers on crystalline silicon (c-Si) and controlling the thickness of SiO2 is an important issue in the fabrication of microelectronics and photovoltaic devices (e.g., MOSFETs, solar cells, optical fibers etc.). Such ultrathin oxide can be grown and tuned even at low temperature (including room temperature), by hyperthermal oxidation or when performed on non-planar Si surfaces (e.g., Si nanowires or spheres). However, hyperthermal silica growth as well as small Si-NW oxidation in general and the initial stages in particular have not yet been investigated in full detail. This work is therefore devoted to controlling ultrathin silica thickness on planar and non-planar Si surfaces, which can open new perspectives in nanodevice fabrication. The simulation of hyperthermal (1-100 eV) Si oxidation demonstrate that at low impact energy (<10 eV), oxygen does not damage the Si surface and this energy region could thus beneficially be used for Si oxidation. In contrast to thermal oxidation, 10 eV species can directly oxidize Si subsurface layers. A transition temperature of about 700 K was found: below this temperature, the oxide thickness only depends on the impact energy of the impinging species. Above this temperature, the oxide thickness depends on the impact energy, type of oxidant and the surface temperature. The results show that control over the ultrathin oxide (a-SiO2) thickness is possible by hyperthermal oxidation of silicon surfaces at temperatures below the transition temperature. In small Si-NWs, oxidation is a self-limiting process that occurs at low temperature, resulting in small Si core - SiO2 shell (semiconductor + dielectric) or c-Si|SiOx| a-SiO2 nanowire, which has also being envisaged to be used as nanowire field-effect transistors and photovoltaic devices in near-future nanotechnology. Above the transition temperature such core-shell nanowires are completely converted to a-SiO2 nanowires. It can be concluded that an accurate control over the interfacial stress by choosing a suitable oxidation temperature and Si-NW diameter can lead to precise nanoscale control over the Si-core radius. All investigations were carried out by applying molecular dynamics calculations using the ReaxFF potential, allowing a accurately study of the underpinning physical and chemical processes.

  13. Engineering functionalized multi-phased silicon/silicon oxide nano-biomaterials to passivate the aggressive proliferation of cancer

    PubMed Central

    Premnath, P.; Tan, B.; Venkatakrishnan, K.

    2015-01-01

    Currently, the use of nano silicon in cancer therapy is limited as drug delivery vehicles and markers in imaging, not as manipulative/controlling agents. This is due to limited properties that native states of nano silicon and silicon oxides offers. We introduce nano-functionalized multi-phased silicon/silicon oxide biomaterials synthesized via ultrashort pulsed laser synthesis, with tunable properties that possess inherent cancer controlling properties that can passivate the progression of cancer. This nanostructured biomaterial is composed of individual functionalized nanoparticles made of a homogenous hybrid of multiple phases of silicon and silicon oxide in increasing concentration outwards from the core. The chemical properties of the proposed nanostructure such as number of phases, composition of phases and crystal orientation of each functionalized nanoparticle in the three dimensional nanostructure is defined based on precisely tuned ultrashort pulsed laser-material interaction mechanisms. The amorphous rich phased biomaterial shows a 30 fold (95%) reduction in number of cancer cells compared to bulk silicon in 48 hours. Further, the size of the cancer cells reduces by 76% from 24 to 48 hours. This method exposes untapped properties of combination of multiple phases of silicon oxides and its applications in cancer therapy. PMID:26190009

  14. Engineering functionalized multi-phased silicon/silicon oxide nano-biomaterials to passivate the aggressive proliferation of cancer

    NASA Astrophysics Data System (ADS)

    Premnath, P.; Tan, B.; Venkatakrishnan, K.

    2015-07-01

    Currently, the use of nano silicon in cancer therapy is limited as drug delivery vehicles and markers in imaging, not as manipulative/controlling agents. This is due to limited properties that native states of nano silicon and silicon oxides offers. We introduce nano-functionalized multi-phased silicon/silicon oxide biomaterials synthesized via ultrashort pulsed laser synthesis, with tunable properties that possess inherent cancer controlling properties that can passivate the progression of cancer. This nanostructured biomaterial is composed of individual functionalized nanoparticles made of a homogenous hybrid of multiple phases of silicon and silicon oxide in increasing concentration outwards from the core. The chemical properties of the proposed nanostructure such as number of phases, composition of phases and crystal orientation of each functionalized nanoparticle in the three dimensional nanostructure is defined based on precisely tuned ultrashort pulsed laser-material interaction mechanisms. The amorphous rich phased biomaterial shows a 30 fold (95%) reduction in number of cancer cells compared to bulk silicon in 48 hours. Further, the size of the cancer cells reduces by 76% from 24 to 48 hours. This method exposes untapped properties of combination of multiple phases of silicon oxides and its applications in cancer therapy.

  15. Novel junctionless silicon-oxide-nitride-oxide-silicon memory devices with field-enhanced poly-Si nanowire structure

    NASA Astrophysics Data System (ADS)

    Chou, Chia-Hsin; Chan, Wei-Sheng; Wu, Chun-Yu; Lee, I.-Che; Liao, Ta-Chuan; Wang, Chao-Lung; Wang, Kuang-Yu; Cheng, Huang-Chung

    2015-08-01

    In this work, a novel gate-all-around (GAA) low-temperature poly-Si (LTPS) junctionless (JL) silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory device with a field-enhanced nanowire (NW) structure has been proposed to improve the programing/erasing (P/E) performance. Each nanowire has three sharp corners fabricated by a sidewall spacer formation technique to obtain high local electrical fields. Owing to the higher carrier concentration in the channel and the high local electrical field from the three sharp corners, such a JL SONOS memory device exhibits a significantly enhanced P/E speed, a larger memory window, and better data retention properties than a conventional inversion mode NW-channel memory device.

  16. Preparation and Crystal Structures of Bismuth Technetates: A New Metal Oxide System

    SciTech Connect

    Rodriguez, Efrain E.; Poineau, Frederic; Llobet, Anna; Czerwinski, Ken; Seshadri, Ram; Cheetham, Anthony K.

    2009-10-27

    Two new oxides have been unambiguously identified as Bi{sub 2}Tc{sub 2}O{sub 7-{delta}} with {delta} = 0.14(1) and Bi{sub 3}TcO{sub 8} through X-ray absorption near-edge structure spectroscoy and neutron powder diffraction. The compound Bi{sub 2}Tc{sub 2}O{sub 7-{delta}} has a cubic pyrochlore-type structure with {alpha} = 10.4746(1) {angstrom}, space group Fd{sub 3}m (origin choice 2), and Z = 8. The compound Bi{sub 3}TcO{sub 8} is also cubic, {alpha} = 11.5749(1) {angstrom}, space group P2{sub 1}3, Z = 8, and has a fluorite-related crystal structure. In Bi{sub 2}Tc{sub 2}O{sub 7-{delta}} the Tc(IV) cations are octahedrally coordinated, whereas in Bi{sub 3}TcO{sub 8} the Tc(VII) cations are tetrahedrally coordinated. A third new phase, probably Bi{sub 3}Tc{sub 3}O{sub 11}, could not be obtained pure, but preliminary X-ray powder diffraction data affords a primitive cubic lattice with {alpha} = 9.3433(1) {angstrom}. On the basis of structural similarities between Bi{sub 2}Tc{sub 2}O{sub 7-{delta}} and closely related oxides, Bi{sub 2}Tc{sub 2}O{sub 7-{delta}} is expected to be a metallic oxide with Pauli paramagnetism. Electronic structure calculations of both Bi{sub 2}Tc{sub 2}O{sub 7-{delta}} and Bi{sub 3}TcO{sub 8} further support metallic conductivity in the former and insulating behavior in the latter. The inert pair effect of the Bi cations on the crystal structures of Bi{sub 2}Tc{sub 2}O{sub 7-{delta}} and Bi{sub 3}TcO{sub 8} is also described. In addition, calculations of the valence electron localization function for Bi{sub 2}Tc{sub 2}O{sub 7-{delta}} and Bi{sub 3}TcO{sub 8} provide further visualization of the Bi 6s{sup 2} lone pair electrons in the real space of the crystal structures.

  17. Oxidation of silicon with a 5 eV O(-) beam

    NASA Technical Reports Server (NTRS)

    Hecht, M. H.; Orient, O. J.; Chutjian, A.; Vasquez, R. P.

    1989-01-01

    A silicon wafer has been oxidized at room temperature in vacuum using a pure, ground-state beam of O(-) ions. The beam was of sufficiently low energy that no displacement damage or implantation was energetically possible. The resulting SiO2 films were analyzed with X-ray photoelectron spectroscopy. A logarithmic dependence of oxide thickness on dose was observed, with an extrapolated oxidation efficiency of unity for the clean silicon surface. A distinct initial oxidation phase was observed, with an anomalously high level of silicon suboxides. In addition, the valence-band offset between the silicon and the oxide was unusually small, suggesting a large interfacial dipole.

  18. Thermodynamic stability of intergranular amorphous films in bismuth-doped zinc oxide

    SciTech Connect

    Wang, H.; Chiang, Y.M.

    1998-01-01

    It is shown that the solid-state equilibrium configuration of Bi-doped ZnO grain boundaries is a nanometer-thick amorphous film. Polycrystalline Bi-doped ZnO was investigated using high-resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM). The equilibrium state below the eutectic temperature and at 1 atm total pressure was approached from three different routes: samples were cooled from above the eutectic temperature (T{sub eutectic} = 740 C), processed entirely below the eutectic temperature, and desegregated by high applied pressure (1 GPa) followed by annealing at ambient pressure to restore segregation. In all instances, the final state is an amorphous intergranular film 1.0--1.5 nm in thickness. The results show that a thin intergranular film in this system has lower free energy than the crystal-crystal grain boundary. The implications of these results for creation of electrically active grain boundaries in zinc oxide varistors are discussed.

  19. Method for removing oxide contamination from silicon carbide powders

    DOEpatents

    Brynestad, J.; Bamberger, C.E.

    1984-08-01

    The described invention is directed to a method for removing oxide contamination in the form of oxygen-containing compounds such as SiO/sub 2/ and B/sub 2/O/sub 3/ from a charge of finely divided silicon carbide. The silicon carbide charge is contacted with a stream of hydrogen fluoride mixed with an inert gas carrier such as argon at a temperature in the range of about 200/sup 0/ to 650/sup 0/C. The oxides in the charge react with the heated hydrogen fluoride to form volatile gaseous fluorides such as SiF/sub 4/ and BF/sub 3/ which pass through the charge along with unreacted hydrogen fluoride and the carrier gas. Any residual gaseous reaction products and hydrogen fluoride remaining in the charge are removed by contacting the charge with the stream of inert gas which also cools the powder to room temperature. The removal of the oxygen contamination by practicing the present method provides silicon carbide powders with desirable pressing and sintering characteristics. 1 tab.

  20. Analysis of bi-layer oxide on austenitic stainless steel, 316L, exposed to Lead-Bismuth Eutectic (LBE) by X-ray Photoelectron Spectroscopy (XPS)

    NASA Astrophysics Data System (ADS)

    Koury, D.; Johnson, A. L.; Ho, T.; Farley, J. W.

    2013-09-01

    Corrosion of the austenitic stainless steel alloy 316L by Lead-Bismuth Eutectic (LBE) was studied using X-ray Photoelectron Spectroscopy (XPS) with Sputter-Depth Profiling (SDP), and compared to data taken by Scanning Electron Microscopy (SEM) and Energy Dispersive X-rays (EDXs). Exposed and unexposed samples were compared. Annealed 316L samples, exposed to LBE for durations of 1000, 2000 and 3000 h, developed bi-layer oxides up to 30 μm thick. Analysis of the charge-states of the 2p3/2 peaks of iron, chromium, and nickel in the oxide layers reveal an inner layer consisting of iron and chromium oxides (likely spinel-structured) and an outer layer consisting of iron oxides (Fe3O4). Cold-rolled 316L samples, exposed for the same durations, form a chromium-rich, thin (⩽1 μm) oxide with some oxidized iron in the outermost ˜200 nm of the oxide layer. This is the first experiment to investigate what components of the 316L are oxidized by LBE exposure. It is shown here that nickel is metallic in the inner layer.

  1. Temperature-dependent minority carrier lifetime of crystalline silicon wafers passivated by high quality amorphous silicon oxide

    NASA Astrophysics Data System (ADS)

    Inaba, Masahiro; Todoroki, Soichiro; Nakada, Kazuyoshi; Miyajima, Shinsuke

    2016-04-01

    We investigated the effects of annealing on the temperature-dependent minority carrier lifetime of a crystalline silicon wafer passivated by hydrogenated amorphous silicon oxide. The annealing significantly affects the lifetime and its temperature dependence. Our device simulations clearly indicate that valence band offset significantly affects the temperature dependence. We also found a slight increase in the interface defect density after annealing.

  2. In situ imaging of the conducting filament in a silicon oxide resistive switch

    PubMed Central

    Yao, Jun; Zhong, Lin; Natelson, Douglas; Tour, James M.

    2012-01-01

    The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of silicon from the silicon oxide matrix. Semi-metallic silicon nanocrystals with structural variations from the conventional diamond cubic form of silicon are observed, which likely accounts for the conduction in the filament. The growth and shrinkage of the silicon nanocrystals in response to different electrical stimuli show energetically viable transition processes in the silicon forms, offering evidence for the switching mechanism. The study here also provides insights into the electrical breakdown process in silicon oxide layers, which are ubiquitous in a host of electronic devices. PMID:22355755

  3. In situ imaging of the conducting filament in a silicon oxide resistive switch.

    PubMed

    Yao, Jun; Zhong, Lin; Natelson, Douglas; Tour, James M

    2012-01-01

    The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of silicon from the silicon oxide matrix. Semi-metallic silicon nanocrystals with structural variations from the conventional diamond cubic form of silicon are observed, which likely accounts for the conduction in the filament. The growth and shrinkage of the silicon nanocrystals in response to different electrical stimuli show energetically viable transition processes in the silicon forms, offering evidence for the switching mechanism. The study here also provides insights into the electrical breakdown process in silicon oxide layers, which are ubiquitous in a host of electronic devices. PMID:22355755

  4. Application of doped silicon oxide films in solar cell technology

    NASA Astrophysics Data System (ADS)

    Grigoras, K.; Major, A.; Simkiene, I.; Gaubas, E.

    1998-05-01

    Silicon oxide films phosphorus doped and formed by a spin-on technique are proposed for the manufacture of shallow, heavily doped 0268-1242/13/5/013/img7-p junctions. The structures were investigated using electron microscopy, optical and electrical methods. Transient microwave absorption measurements were performed to monitor the quality of the doping by evaluation of the surface recombination velocity and the bulk lifetime. Such a simple 0268-1242/13/5/013/img7-p junction formation technique is suitable for the fabrication of a silicon solar cell with a highly doped 0268-1242/13/5/013/img9 and shallow 0268-1242/13/5/013/img10 emitter. The usual recombination rates at the surfaces are reduced by more than an order of magnitude. The tentative solar cells have been manufactured, and an efficiency of 12% was achieved.

  5. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2001-01-01

    A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  6. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2000-01-01

    A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  7. Effect of hydrogen passivation on the photoluminescence of Tb ions in silicon rich silicon oxide films

    NASA Astrophysics Data System (ADS)

    Zatryb, G.; Klak, M. M.; Wojcik, J.; Misiewicz, J.; Mascher, P.; Podhorodecki, A.

    2015-12-01

    In this work, silicon-rich silicon oxide films containing terbium were prepared by means of plasma enhanced chemical vapor deposition. The influence of hydrogen passivation on defects-mediated non-radiative recombination of excited Tb3+ ions was investigated by photoluminescence, photoluminescence excitation, and photoluminescence decay measurements. Passivation was found to have no effect on shape and spectral position of the excitation spectra. In contrast, a gradual increase in photoluminescence intensity and photoluminescence decay time was observed upon passivation for the main 5D4-7F5 transition of Tb3+ ions. This observation was attributed to passivation of non-radiative recombination defects centers with hydrogen. It was found that the number of emitted photons increases upon passivation as a result of two effects: (1) longer Tb3+ lifetime in the 5D4 excited state and (2) optical activation of new Tb3+ emitters. The obtained results were discussed and compared with other experimental reports.

  8. Visible light photocatalytic degradation of dyes by bismuth oxide-reduced graphene oxide composites prepared via microwave-assisted method.

    PubMed

    Liu, Xinjuan; Pan, Likun; Lv, Tian; Sun, Zhuo; Sun, Chang Q

    2013-10-15

    Bi2O3-reduced graphene oxide (RGO) composites were successfully synthesized via microwave-assisted reduction of graphite oxide in Bi2O3 precursor solution using a microwave system. Their morphologies, structures, and photocatalytic performance in the degradation of methylene blue (MB) and methyl orange (MO) were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction spectroscopy, UV-vis absorption spectroscopy, and electrochemical impedance spectroscopy, respectively. The results show that the RGO addition can enhance the photocatalytic performance of Bi2O3-RGO composites. Bi2O3-RGO composite with 2 wt.% RGO achieves maximum MO and MB degradation rates of 93% and 96% at 240min under visible light irradiation, respectively, much higher than those for the pure Bi2O3 (78% and 76%). The enhanced photocatalytic performance is ascribed to the increased light adsorption and the reduction in electron-hole pair recombination in Bi2O3 with the introduction of RGO. PMID:23953652

  9. Oxidation of silicon and germanium by atomic and molecular oxygen

    NASA Astrophysics Data System (ADS)

    Kisa, Maja

    2007-12-01

    Space vehicles residing in the low Earth orbit (LEO) are exposed to a harsh environment that rapidly degrades their materials. The LEO ranges from 200-700km in altitude from the Earth's surface, and the temperature varies between 200 and 400K. The most hazardous species in LEO is atomic oxygen (AO) containing 5eV kinetic energy due to the high velocity of the spacecrafts (8km/s). The goal of this research is the elucidation of the fundamental mechanisms of semiconductor degradation and passivation in LEO conditions by comparing the structural differences in the oxide films created by exposure to AO and molecular oxygen (MO). Silicon is the base material for solar cells used in LEO whereas Ge and SiOx films are common coatings to protect polymer materials that are used as structural materials in spacecrafts. Hyperthermal AO was created by the laser detonation of MO within a high vacuum (HV) chamber, that produces a high flux of AO. A variety of nano-characterization techniques, including high resolution transmission electron microscopy (HREM), and electron energy loss spectroscopy (EELS) were used to determine the microstructure and local chemistry of the oxide and the oxide/semiconductor interface. For Si, the amorphous silica formed by AO was nearly twice as thick, more ordered, and more homogeneous in composition, than the oxide formed by MO. The Si/SiOx interface formed by AO was atomically abrupt, with no suboxides detected near the interface or throughout the oxide. The oxide scale formed by MO on Si(100) consisted of transitional oxidation states. The oxide film formed on Ge(100) due to exposure to 5eV AO, is 2-3 times thicker and similarly to the Si/SiOx interfaces, the Ge/GeOx interface was found to be atomically abrupt. The oxidation kinetics of Si and Ge were monitored in situ using a research quartz crystal microbalance (RQCM) that was incorporated into the AO source. The oxidation kinetics in hyperthermal AO did not follow the standard linear to parabolic Deal-Grove kinetics. A novel oxidation model, based on the oxide structure continually changing during AO exposure, is proposed to explain the unusual power law oxidation kinetics.

  10. Effect of Graphene Oxide on the Properties of Porous Silicon

    NASA Astrophysics Data System (ADS)

    Olenych, Igor B.; Aksimentyeva, Olena I.; Monastyrskii, Liubomyr S.; Horbenko, Yulia Yu.; Partyka, Maryan V.; Luchechko, Andriy P.; Yarytska, Lidia I.

    2016-02-01

    We studied an effect of the graphene oxide (GO) layer on the optical and electrical properties of porous silicon (PS) in hybrid PS-GO structure created by electrochemical etching of silicon wafer and deposition of GO from water dispersion on PS. With the help of scanning electron microscopy (SEM), atomic-force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy, it was established that GO formed a thin film on the PS surface and is partly embedded in the pores of PS. A comparative analysis of the FTIR spectra for the PS and PS-GO structures confirms the passivation of the PS surface by the GO film. This film has a sufficient transparency for excitation and emission of photoluminescence (PL). Moreover, GO modifies PL spectrum of PS, shifting the PL maximum by 25 nm towards lower energies. GO deposition on the surface of the porous silicon leads to the change in the electrical parameters of PS in AC and DC modes. By means of current-voltage characteristics (CVC) and impedance spectroscopy, it is shown that the impact of GO on electrical characteristics of PS manifests in reduced capacitance and lower internal resistance of hybrid structures.

  11. Effect of Graphene Oxide on the Properties of Porous Silicon.

    PubMed

    Olenych, Igor B; Aksimentyeva, Olena I; Monastyrskii, Liubomyr S; Horbenko, Yulia Yu; Partyka, Maryan V; Luchechko, Andriy P; Yarytska, Lidia I

    2016-12-01

    We studied an effect of the graphene oxide (GO) layer on the optical and electrical properties of porous silicon (PS) in hybrid PS-GO structure created by electrochemical etching of silicon wafer and deposition of GO from water dispersion on PS. With the help of scanning electron microscopy (SEM), atomic-force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy, it was established that GO formed a thin film on the PS surface and is partly embedded in the pores of PS. A comparative analysis of the FTIR spectra for the PS and PS-GO structures confirms the passivation of the PS surface by the GO film. This film has a sufficient transparency for excitation and emission of photoluminescence (PL). Moreover, GO modifies PL spectrum of PS, shifting the PL maximum by 25 nm towards lower energies. GO deposition on the surface of the porous silicon leads to the change in the electrical parameters of PS in AC and DC modes. By means of current-voltage characteristics (CVC) and impedance spectroscopy, it is shown that the impact of GO on electrical characteristics of PS manifests in reduced capacitance and lower internal resistance of hybrid structures. PMID:26831681

  12. Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation

    SciTech Connect

    Ryckman, Judson D.; Reed, Robert A.; Weller, Robert A.; Fleetwood, D. M.; Weiss, S. M.

    2010-12-01

    We report the observation of enhanced oxidation on silicon and porous silicon samples exposed in air ambient to high-dose-rate 10 keV x-ray radiation at room temperature. The evolution of the radiation-induced oxide growth is monitored by ellipsometry and interferometric reflectance spectroscopy. Fourier transform infrared (FTIR) spectroscopy shows the emergence of Si-O-Si stretching modes and corresponding suppression of SiH{sub x} and Si-Si modes in the porous silicon samples. The radiation response depends strongly on initial native oxide thickness and Si-H surface species. The enhanced oxidation mechanism is attributed to photoinduced oxidation processes wherein energetic photons are used to dissociate molecular oxygen and promote the formation of more reactive oxygen species.

  13. Silicon and tungsten oxide nanostructures for water splitting

    NASA Astrophysics Data System (ADS)

    Reyes Gil, Karla R.; Spurgeon, Joshua M.; Lewis, Nathan S.

    2009-08-01

    Inorganic semiconductors are promising materials for driving photoelectrochemical water-splitting reactions. However, there is not a single semiconductor material that can sustain the unassisted splitting of water into H2 and O2. Instead, we are developing a three part cell design where individual catalysts for water reduction and oxidation will be attached to the ends of a membrane. The job of splitting water is therefore divided into separate reduction and oxidation reactions, and each catalyst can be optimized independently for a single reaction. Silicon might be suitable to drive the water reduction. Inexpensive highly ordered Si wire arrays were grown on a single crystal wafer and transferred into a transparent, flexible polymer matrix. In this array, light would be absorbed along the longer axial dimension while the resulting electrons or holes would be collected along the much shorter radial dimension in a massively parallel array resembling carpet fibers on a microscale, hence the term "solar carpet". Tungsten oxide is a good candidate to drive the water oxidation. Self-organized porous tungsten oxide was successfully synthesized on the tungsten foil by anodization. This sponge-like structure absorbs light efficiently due to its high surface area; hence we called it "solar sponge".

  14. Understanding the role of silicon oxide shell in oxide-assisted SiNWs growth

    SciTech Connect

    Wu, Shunqing; Wang, Cai-Zhuang Z; Zhu, Z Z; Ho, Kai-Ming

    2014-12-01

    The role of silicon oxide shell in oxide-assisted SiNWs growth is studied by performing ab initio molecular dynamics simulations on the structural and dynamical properties of the interface between crystalline Si(111) surface and disorder SiO thin film. Si atoms in the SiO film tends to aggregate into the vicinity of the Si(111)/SiO interface. In addition, the diffusion of Si atoms at the interface is anisotropic - the diffusion along the interface is several times faster than that perpendicular to the interface. The segregation and anisotropic diffusion of Si atoms at the Si(111)/SiO interface shed interesting light into the mechanism of oxide-assisted silicon nanowire growth.

  15. Bismuth allyloxides.

    PubMed

    Knispel, Christina; Limberg, Christian; Ziemer, Burkhard

    2010-05-01

    Bismuth allyloxides, [Bi(OR)(3)] with R = CH(2)CH=CH(2), CH(CH(3))CH=CH(2), C(CH(3))(2)CH=CH(2), and CH(2)CH=C(CH(3))(2), can be prepared by alcoholysis of [Bi(O(t)Bu)(3)] and, in some cases, also via salt metathesis reactions starting from BiCl(3) and sodium allylates. They are readily soluble in common organic solvents, and NMR spectroscopic investigations do not provide any hint to aggregated species or any equilibria in solution. The majority of the compounds also proved volatile enough to be purified by sublimation. Crystal structure analyses, however, provided evidence for a high degree of aggregation in the solid state, which leads to large rings and chains as structural motifs. PMID:20384285

  16. Enhanced photothermal effect of surface oxidized silicon nanocrystals anchored to reduced graphene oxide nanosheets

    NASA Astrophysics Data System (ADS)

    Afshani, Parichehr; Moussa, Sherif; Atkinson, Garrett; Kisurin, Vitaly Y.; Samy El-Shall, M.

    2016-04-01

    We demonstrate the coupling of the photothermal effects of silicon nanocrystals and graphene oxide (GO) dispersed in water. Using laser irradiation (532 nm or 355 nm) of suspended Si nanocrystals in an aqueous solution of GO, the synthesis of surface oxidized Si-reduced GO nanocomposites (SiOx/Si-RGO) is reported. The laser reduction of GO is accompanied by surface oxidation of the Si nanocrystals resulting in the formation of the SiOx/Si-RGO nanocomposites. The SiOx/Si-RGO nanocomposites are proposed as promising materials for photothermal therapy and for the efficient conversion of solar energy into usable heat for a variety of thermal and thermomechanical applications.

  17. Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy

    SciTech Connect

    Vasin, A. V.; Okholin, P. N.; Verovsky, I. N.; Nazarov, A. N.; Lysenko, V. S.; Kholostov, K. I. Bondarenko, V. P.; Ishikawa, Y.

    2011-03-15

    Porous silicon layers were produced by electrochemical etching of single-crystal silicon wafers with the resistivity 10 {Omega} cm in the aqueous-alcohol solution of hydrofluoric acid. Raman spectroscopy and infrared absorption spectroscopy are used to study the processes of interaction of porous silicon with undiluted acetylene at low temperatures and the processes of oxidation of carbonized porous silicon by water vapors. It is established that, even at the temperature 550 Degree-Sign C, the silicon-carbon bonds are formed at the pore surface and the graphite-like carbon condensate emerges. It is shown that the carbon condensate inhibits oxidation of porous silicon by water vapors and contributes to quenching of white photoluminescence in the oxidized carbonized porous silicon nanocomposite layer.

  18. Characterisation of thin LPCVD silicon-rich oxide films

    NASA Astrophysics Data System (ADS)

    Ristic, D.; Ivanda, M.; Marcius, M.; Holy, V.; Siketic, Z.; Bogdanovic-Radovic, I.; Gamulin, O.; Furic, K.; Ristic, M.; Music, S.; Buljan, M.; Ferrari, M.; Chiasera, A.; Chiappini, A.; Righini, G. C.

    2011-05-01

    Thin silicon rich oxide (SiOx) films were deposited using the LPCVD (Low Pressure Chemical Vapour Deposition) method. Silane diluted in argon and oxygen were used as the reactant gasses, and the deposition temperature was kept constant at 570 °C. The films were deposited on silicon (111) and on fused silica substrates. Films with the different values of the oxygen content were deposited by varying the ratio of the flows of oxygen and silane in the horizontal tube reactor. The films were characterized in terms on the surface quality (by X-ray specular reflectivity and scanning electron microscopy) and in terms of the oxygen content x (by time of flight elastic recoil detection analysis). The films were found to have a very smooth, homogeneous surface and the oxygen content was found to vary from x=0 to x=2 in dependence on the deposition parameters. The refractive indices of the films were measured both in the visible (405 nm) and in the infrared (1319 nm and 1542 nm), compared to the values which the Bruggeman's effective medium theory predicts for such thin films, and were found to be in good agreement. The position of the Si-O stretching peak in the infrared absorption spectra was used to draw some conclusion about the distribution of the silicon and oxygen atoms inside the amorphous SiOx matrix. The atoms were found to be inhomogeneously distributed inside the amorphous matrix, with the average number of oxygen atoms in the vicinity of a given silicon atoms being lower than x.

  19. Transparent conductive oxides for thin-film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells on ETP ZnO. The solar cells deposited on the first doped ZnO:Al layers suffered from collection problems reducing the fill factor, and from shunting. This is attributed to the steep trenches, sharp features and vertical steps that have been identified at the TCO surface. ZnO:Al layers with granular structure, deposited at higher argon flow through the cascaded arc plasma source, allowed for fill factors of the solar cells up to 0.70, comparable to cells on undoped ZnO. The best solar cell on doped ZnO:Al deposited by ETP CVD achieved an efficiency of 9.3 % which is comparable to the 9.4 % obtained on Asahi U-type SnO2:F. Fluorinated tin oxide has been deposited by Atmospheric Chemical Vapor Deposition (APCVD) on glass from three different tin precursors, tetramethyltin, monobutyltin trichloride, and tin tetrachloride (TTC). TTC is the Sn precursor which resulted in the TCO with the best performance of a-Si:H pin solar cells. In accordance with the conclusions from our experiments with solar cells on undoped and aluminum doped zinc oxide, a high surface roughness and haze do not necessarily lead to a lower diode quality, and vice versa.

  20. Characterization of silicon carbide metal oxide semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Marinella, Matthew J.

    Only a few years after the invention of the transistor, William Shockley considered silicon carbide (SiC) an excellent material for high temperature semiconductor devices. Over a half century later, SiC technology is nearly mature enough that it may be considered for use in commercial electronic devices. Furthermore, since SiC has the ability to grow thermal silicon dioxide, significant research has been directed toward the creation of a commercial SiC metal oxide semiconductor field effect transistor (MOSFET). However, a number of significant hurdles still must be overcome before SiC devices can become commercially competitive, including the relatively high cost and low quality of materials. Another significant problem is the lack of understanding of factors which limit the minority carrier lifetime. The primary purpose of this work was to use the pulsed metal oxide semiconductor capacitor (MOS-C) technique to measure generation lifetime in SiC materials. It was found that many nonidealities corrupt the results obtained by this technique. One very interesting nonideality was negative bias temperature instability (NBTI), which has also been widely studied by the silicon industry in recent years. Methods to understand and minimize the effect of these nonidealities were developed. Furthermore, these methods allowed for further study of the oxide properties, such as leakage current. Even after accounting for nonidealities, generation lifetimes showed several peculiarities, such as a variation of as much as a factor of 1000 within a square cm area. In addition, the ratio of generation to recombination lifetime is less than unity, which is not predicted by classic theory, nor typically observed in silicon devices. Possible explanations are put forth to explain these observations. In addition, to further investigate these abnormalities, Schottky diodes were fabricated and characterized. When applied to the SiC MOS capacitor, the pulsed MOS-C technique involves significant nonidealities which preclude its use from daily process monitoring. However, the non-equilibrium MOS-C has proven a very useful structure to research and further understand the generation lifetime behavior of SiC. This structure has also proven useful for the study of nonidealities, such as NBTI and leakage current, which can affect SiC MOSFETs.

  1. Phonon confinement in Ge nanocrystals in silicon oxide matrix

    NASA Astrophysics Data System (ADS)

    Jie, Yiaxiong; Wee, A. T. S.; Huan, C. H. A.; Shen, Z. X.; Choi, W. K.

    2011-02-01

    Spherical Ge nanocrystals well-dispersed in amorphous silicon oxide matrix have been synthesized with different sizes, and significant size-dependent Raman shift and broadening have been observed. The lattice constant of Ge nanocrystals well-bonded to silicon oxide matrix has been characterized nearly size-independent. With our proposed stress generation and relaxation mechanisms, stress effects in our samples have been analyzed to be insignificant with respect to phonon confinement effects. The phenomenological model introduced by [Richter, Wang, and Ley, Solid State Commun. 39, 625 (1981] with Gaussian weighting function and TO2 phonon dispersion function has been found to give a quite good description of the measured size-dependence of Raman shift and broadening. A 3-peak fitting method has been proposed to determine Ge nanocrystal size and film crystallinity. After physically quantizing quantum-confined one-dimensional elastic waves, we have deduced that each quantum-confined phonon possesses an instantaneous momentum of a given magnitude ℏk with an equal chance of being either positive or negative and momentum conservation is retained in an electron-phonon scattering process. Therefore, on the basis of the first-principle microscopic model and our experimental results, we deduced that Raman scattering in spherical nanocrystals is a concurrent two-phonon process, one phonon generation and one phonon transition.

  2. Dielectric function of annealed sub-stoichiometric silicon oxide layers

    NASA Astrophysics Data System (ADS)

    Rimini, Emanuele

    2005-03-01

    We present an analytical methodology, based on electron energy loss spectroscopy and energy filtered transmission electron microscopy, which allow us to quantify the clustered silicon concentration and the complex dielectric function of annealed sub-stoichiometric silicon oxide layers, deposited by plasma enhanced chemical vapor deposition (PECVD). To put in evidence the Si clusters, formed as a consequence of the high temperature anneal and embedded in a SiO2 host, we used energy selected bright field imaging with an energy loss tuned to the value of the Si bulk plasmon. The dielectric function of the sample is determined by fitting the experimental spectrum using the theoretical description proposed by Barrera and Fuchs(1). The model solves the problem of calculating the energy loss rate for electrons passing through a system of spherical particles of equal radii, located at random in a host material. The dielectric function of the host was preliminarily determined by a Kramers-Kronig analysis of reference pure PECVD oxide spectrum. (1) R.G. Barrera and R. Fuchs, Phys. Rev. B52, 3256 (1995)

  3. Single crystal ternary oxide ferroelectric integration with Silicon

    NASA Astrophysics Data System (ADS)

    Bakaul, Saidur; Serrao, Claudy; Youun, Long; Khan, Asif; Salahuddin, Sayeef

    2015-03-01

    Integrating single crystal, ternary oxide ferroelectric thin film with Silicon or other arbitrary substrates has been a holy grail for the researchers since the inception of microelectronics industry. The key motivation is that adding ferroelectric materials to existing electronic devices could bring into new functionality, physics and performance improvement such as non-volatility of information, negative capacitance effect and lowering sub-threshold swing of field effect transistor (FET) below 60 mV/decade in FET [Salahuddin, S, Datta, S. Nano Lett. 8, 405(2008)]. However, fabrication of single crystal ferroelectric thin film demands stringent conditions such as lattice matched single crystal substrate and high processing temperature which are incompatible with Silicon. Here we report on successful integration of PbZr0.2Ti0.8O3 in single crystal form with by using a layer transfer method. The lattice structure, surface morphology, piezoelectric coefficient d33, dielectric constant, ferroelectric domain switching and spontaneous and remnant polarization of the transferred PZT are as good as these characteristics of the best PZT films grown by pulsed laser deposition on lattice matched oxide substrates. We also demonstrate Si based, FE gate controlled FET devices.

  4. Metal and silicon oxides as efficient catalysts for the preparative organic chemistry

    NASA Astrophysics Data System (ADS)

    Titova, Yu A.; Fedorova, O. V.; Rusinov, G. L.; Charushin, V. N.

    2015-12-01

    Data on the use of metal and silicon oxides as catalysts of reactions which are most in demand in laboratory organic syntheses are summarized. The potential of oxide catalysts for optimization of organic reactions is demonstrated, and some mechanistic aspects of oxide action are considered. Published data on the synthetic use of single, mixed, bulk and nanosized metal and silicon oxides are presented. Bibliography — 189 references.

  5. Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

    SciTech Connect

    Li, Shaoyuan; Ma, Wenhui; Zhou, Yang; Chen, Xiuhua; Xiao, Yongyin; Ma, Mingyu; Wei, Feng; Yang, Xi

    2014-05-01

    In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO{sub 3} system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO{sub 3} concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWs is significantly reduced when Ag{sup +} ions concentrations are too high. The deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon. - Graphical abstract: Schematic cross-sectional views of PSiNWs array formation by etching oxidized silicon wafer in HF/AgNO{sub 3} solution. (A) At the starting point; (B) during the etching process; and (C) after Ag dendrites remove. - Highlights: • Prior to etching, a simple pre-oxidation is firstly used to treat silicon substrate. • The medially doped p-type MPSiNWs are prepared by one-step MACE. • Deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon are studied. • A model is finally proposed to explain the formation mechanism of PSiNWs.

  6. Solid oxide membrane (SOM) process for ytterbium and silicon production from their oxides

    NASA Astrophysics Data System (ADS)

    Jiang, Yihong

    The Solid oxide membrane (SOM) electrolysis is an innovative green technology that produces technologically important metals directly from their respective oxides. A yttria-stabilized zirconia (YSZ) tube, closed at one end is employed to separate the molten salt containing dissolved metal oxides from the anode inside the YSZ tube. When the applied electric potential between the cathode in the molten salt and the anode exceeds the dissociation potential of the desired metal oxides, oxygen ions in the molten salt migrate through the YSZ membrane and are oxidized at the anode while the dissolved metal cations in the flux are reduced to the desired metal at the cathode. Compared with existing metal production processes, the SOM process has many advantages such as one unit operation, less energy consumption, lower capital costs and zero carbon emission. Successful implementation of the SOM electrolysis process would provide a way to mitigate the negative environmental impact of the metal industry. Successful demonstration of producing ytterbium (Yb) and silicon (Si) directly from their respective oxides utilizing the SOM electrolysis process is presented in this dissertation. During the SOM electrolysis process, Yb2O3 was reduced to Yb metal on an inert cathode. The melting point of the supporting electrolyte (LiF-YbF3-Yb2O3) was determined by differential thermal analysis (DTA). Static stability testing confirmed that the YSZ tube was stable with the flux at operating temperature. Yb metal deposit on the cathode was confirmed by scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS). During the SOM electrolysis process for silicon production, a fluoride based flux based on BaF2, MgF2, and YF3 was engineered to serve as the liquid electrolyte for dissolving silicon dioxide. YSZ tube was used to separate the molten salt from an anode current collector in the liquid silver. Liquid tin was chosen as cathode to dissolve the reduced silicon during SOM electrolysis. After electrolysis, upon cooling, silicon crystals precipitated out from the Si-Sn liquid alloy. The presence of high-purity silicon crystals in the liquid tin cathode was confirmed by SEM/EDS. The fluoride based flux was also optimized to improve YSZ membrane stability for long-term use.

  7. Oxide impurities in silicon oxide intermetal dielectrics and their potential to elevate via-resistances.

    PubMed

    Qin, Wentao; Alldredge, Donavan; Heleotes, Douglas; Elkind, Alexander; Theodore, N David; Fejes, Peter; Vadipour, Mostafa; Godek, Bill; Lerner, Norman

    2014-08-01

    Silicon oxide used as an intermetal dielectric (IMD) incorporates oxide impurities during both its formation and subsequent processing to create vias in the IMD. Without a sufficient degassing of the IMD, oxide impurities released from the IMD during the physical vapor deposition (PVD) of the glue layer of the vias had led to an oxidation of the glue layer and eventual increase of the via resistances, which correlated with the O-to-Si atomic ratio of the IMD being ~10% excessive as verified by transmission electron microscopy (TEM) analysis. A vacuum bake of the IMD was subsequently implemented to enhance outgassing of the oxide impurities in the IMD before the glue layer deposition. The implementation successfully reduced the via resistances to an acceptable level. PMID:24821584

  8. Extraction and separation of bismuth(III).

    PubMed

    Langade, A D; Shinde, V M

    1981-10-01

    Separation of bismuth from beryllium, lead, iron(III), indium, scandium, lanthanum, antimony(III), zirconium, titanium, thorium, vanadium(V), molybdenum(VI), uranium (VI) and chromium(VI) is achieved by selective extraction of bismuth from 0.1M sodium salicylate solution (adjusted to pH 7) into mesityl oxide (MeO). The extracted species is Bi (HOC(6)H(4)COO)(3).3MeO. The results are accurate within +/- 0.5%, with a standard deviation of 0.8%. The separation and determination of bismuth takes only 15 min. PMID:18963000

  9. Effect of phase stability degradation of bismuth on sensor characteristics of nano-bismuth fixed electrode.

    PubMed

    Lee, Gyoung-Ja; Kim, Chang Kyu; Lee, Min Ku; Rhee, Chang Kyu

    2010-12-15

    Effect of phase stability degradation of bismuth on sensor characteristics of nano-bismuth fixed electrode has been investigated using square-wave anodic stripping voltammetry technique, scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectroscopy. From the analyses of square-wave anodic stripping voltammograms (SWASV) repetitively measured on the nano-bismuth fixed electrode, it was found that the oxidation peak currents dropped by 81%, 68% and 59% for zinc, cadmium and lead, respectively, after the 100th measurement (about 400 min of operation time). The sphere bismuth nanoparticles gradually changed to the agglomerates with petal shape as the operation time increased. From the analyses of SEM images and XRD patterns, it is confirmed that the oxidation of Bi into BiOCl/Bi(2)O(2)CO(3) and the agglomeration of bismuth nanoparticles caused by the phase change decrease a reproducibility of the stripping voltammetric response. Moreover, most of the bismuth becomes BiOCl at pH 3.0 and bismuth hydroxide, Bi(OH)(3) at pH 7.0, which results in a significant decrease in sensitivity of the nano-bismuth fixed electrode. PMID:21111192

  10. Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation

    NASA Astrophysics Data System (ADS)

    Chen, Yi Wei; Prange, Jonathan D.; Dhnen, Simon; Park, Yohan; Gunji, Marika; Chidsey, Christopher E. D.; McIntyre, Paul C.

    2011-07-01

    A leading approach for large-scale electrochemical energy production with minimal global-warming gas emission is to use a renewable source of electricity, such as solar energy, to oxidize water, providing the abundant source of electrons needed in fuel synthesis. We report corrosion-resistant, nanocomposite anodes for the oxidation of water required to produce renewable fuels. Silicon, an earth-abundant element and an efficient photovoltaic material, is protected by atomic layer deposition (ALD) of a highly uniform, 2?nm thick layer of titanium dioxide (TiO2) and then coated with an optically transmitting layer of a known catalyst (3?nm iridium). Photoelectrochemical water oxidation was observed to occur below the reversible potential whereas dark electrochemical water oxidation was found to have low-to-moderate overpotentials at all pH values, resulting in an inferred photovoltage of ~550?mV. Water oxidation is sustained at these anodes for many hours in harsh pH and oxidative environments whereas comparable silicon anodes without the TiO2 coating quickly fail. The desirable electrochemical efficiency and corrosion resistance of these anodes is made possible by the low electron-tunnelling resistance (<0.006???cm2 for p+-Si) and uniform thickness of atomic-layer deposited TiO2.

  11. Structural Evolution of Silicon Oxide Nanowires via Head-Growth Solid-Liquid-Solid Process

    NASA Astrophysics Data System (ADS)

    Hsu, Cheng-Hang; Chan, Shih-Yu; Chen, Chia-Fu

    2007-11-01

    In this paper, we propose a growth mechanism for silicon oxide nanowires (SiONWs) as a unique solid-liquid-solid process. SiONWs were synthesized in a furnace at 1000 °C and cooled at a high rate. Nickel and gold were introduced as catalysts to dissolve and precipitate the silicon oxide originally prepared by wet oxidation. The ratio of nickel to gold determined the precipitation rate and different “octopus-like” structures were formed. At a specific cooling rate, composition and amount of a catalyst, aligned silicon oxide nanowires with unattached ends were obtained.

  12. Atomistic modeling of bending properties of oxidized silicon nanowires

    SciTech Connect

    Ilinov, Andrey Kuronen, Antti

    2014-03-14

    In this work, we have modeled a three point bending test of monocrystalline Si nanowires using molecular dynamics simulations in order to investigate their elastic properties. Tested nanowires were about 30 nm in length and had diameters from 5 to 9 nm. To study the influence of a native oxide layer, nanowires were covered with a 1 nm thick silica layer. The bending force was applied by a carbon diamond half-sphere with a 5 nm diameter. The Si-O parametrization for the Tersoff potential was used to describe atomic interactions between Si and O atoms. In order to remove the indentation effect of the diamond half-sphere and to obtain a pure bending behavior, we have also performed a set of simulations with fixed bottoms of the nanowires. Our results show that the oxide layer reduces the nanowire stiffness when compared with a pure Si nanowire with the same number of silicon atoms—in spite of the fact that the oxidized nanowires had larger diameters.

  13. Formation of hybrid hafnium oxide by applying sacrifacial silicon film

    NASA Astrophysics Data System (ADS)

    Lin, Chiung-Wei; Zheng, Bo-Shen; Huang, Jing-Wei

    2016-01-01

    In the fabrication of hafnium oxide (HfO2)-based metal-insulator-semiconductor (MIS) devices, a sacrificial amorphous silicon (a-Si) film was used as silicon source for facilitating the formation of hafnium silicate (Hf-silicate; HfSiO) between HfO2 and crystallized Si (c-Si). HfSiO can assist in changing the phase of the HfO2 film into the tetragonal phase and achieve high dielectric constant. The combination of HfSiO and HfO2 was named as “Hybrid HfO2”. When this Hybrid HfO2 insulator was applied to MIS devices, it can form a good insulator/semiconductor interface with c-Si. Hybrid HfO2 cannot only suppress the leakage current but also show high dielectric strength. The Hybrid HfO2 film in this work exhibited a high dielectric constant of 25.5 and a high dielectric strength of 17.9 MV/cm.

  14. Novel synthetic methodology for controlling the orientation of zinc oxide nanowires grown on silicon oxide substrates

    NASA Astrophysics Data System (ADS)

    Cho, Jinhyun; Salleh, Najah; Blanco, Carlos; Yang, Sungwoo; Lee, Chul-Jin; Kim, Young-Woo; Kim, Jungsang; Liu, Jie

    2014-03-01

    This study presents a simple method to reproducibly obtain well-aligned vertical ZnO nanowire arrays on silicon oxide (SiOx) substrates using seed crystals made from a mixture of ammonium hydroxide (NH4OH) and zinc acetate (Zn(O2CCH3)2) solution. In comparison, high levels of OH- concentration obtained using NaOH or KOH solutions lead to incorporation of Na or K atoms into the seed crystals, destroying the c-axis alignment of the seeds and resulting in the growth of misaligned nanowires. The use of NH4OH eliminates the metallic impurities and ensures aligned nanowire growth in a wide range of OH- concentrations in the seed solution. The difference of crystalline orientations between NH4OH- and NaOH-based seeds is directly observed by lattice-resolved images and electron diffraction patterns using a transmission electron microscope (TEM). This study obviously suggests that metallic impurities incorporated into the ZnO nanocrystal seeds are one of the factors that generates the misaligned ZnO nanowires. This method also enables the use of silicon oxide substrates for the growth of vertically aligned nanowires, making ZnO nanostructures compatible with widely used silicon fabrication technology.This study presents a simple method to reproducibly obtain well-aligned vertical ZnO nanowire arrays on silicon oxide (SiOx) substrates using seed crystals made from a mixture of ammonium hydroxide (NH4OH) and zinc acetate (Zn(O2CCH3)2) solution. In comparison, high levels of OH- concentration obtained using NaOH or KOH solutions lead to incorporation of Na or K atoms into the seed crystals, destroying the c-axis alignment of the seeds and resulting in the growth of misaligned nanowires. The use of NH4OH eliminates the metallic impurities and ensures aligned nanowire growth in a wide range of OH- concentrations in the seed solution. The difference of crystalline orientations between NH4OH- and NaOH-based seeds is directly observed by lattice-resolved images and electron diffraction patterns using a transmission electron microscope (TEM). This study obviously suggests that metallic impurities incorporated into the ZnO nanocrystal seeds are one of the factors that generates the misaligned ZnO nanowires. This method also enables the use of silicon oxide substrates for the growth of vertically aligned nanowires, making ZnO nanostructures compatible with widely used silicon fabrication technology. Electronic supplementary information (ESI) available: Additional SEM images, photographs of seed solution and XRD peaks and XPS. See DOI: 10.1039/c3nr03694d

  15. Direct synthesis of silicon oxide nanowires on organic polymer substrates

    NASA Astrophysics Data System (ADS)

    Yun, J.; Jeong, Y.; Lee, G.-H.

    2009-09-01

    A nanowire growth model assisted by polymer reconstruction was discovered and used to achieve the direct synthesis of amorphous silicon oxide nanowires (SiONWs) on polyethylene terephthalate (PET) substrates at low growth temperatures (no more than 150 °C) using plasma-enhanced chemical vapor deposition (PECVD). The reconstructed polymers were generated from the scission and recombination of polymer chains on the surface of PET substrates under active Ar:O2 plasma in the PECVD process. The highly ordered nanowire arrays exhibited an excellent geometrical configuration that is comparable to that of SiONWs grown on Si substrates at temperatures higher than 1000 °C by using conventional vapor deposition methods with various metal catalysts. A promising optical property—strong photoluminescence in the violet-blue spectral range at room temperature—was detected in the nanowires. This might lead to breakthroughs in the fabrication of electronic and optical nanoscale devices on flexible polymer substrates.

  16. Direct synthesis of silicon oxide nanowires on organic polymer substrates.

    PubMed

    Yun, J; Jeong, Y; Lee, G-H

    2009-09-01

    A nanowire growth model assisted by polymer reconstruction was discovered and used to achieve the direct synthesis of amorphous silicon oxide nanowires (SiONWs) on polyethylene terephthalate (PET) substrates at low growth temperatures (no more than 150 degrees C) using plasma-enhanced chemical vapor deposition (PECVD). The reconstructed polymers were generated from the scission and recombination of polymer chains on the surface of PET substrates under active Ar:O(2) plasma in the PECVD process. The highly ordered nanowire arrays exhibited an excellent geometrical configuration that is comparable to that of SiONWs grown on Si substrates at temperatures higher than 1000 degrees C by using conventional vapor deposition methods with various metal catalysts. A promising optical property-strong photoluminescence in the violet-blue spectral range at room temperature-was detected in the nanowires. This might lead to breakthroughs in the fabrication of electronic and optical nanoscale devices on flexible polymer substrates. PMID:19687544

  17. Efficient and sustained photoelectrochemical water oxidation by cobalt oxide/silicon photoanodes with nanotextured interfaces.

    PubMed

    Yang, Jinhui; Walczak, Karl; Anzenberg, Eitan; Toma, Francesca M; Yuan, Guangbi; Beeman, Jeffrey; Schwartzberg, Adam; Lin, Yongjing; Hettick, Mark; Javey, Ali; Ager, Joel W; Yano, Junko; Frei, Heinz; Sharp, Ian D

    2014-04-30

    Plasma-enhanced atomic layer deposition of cobalt oxide onto nanotextured p(+)n-Si devices enables efficient photoelectrochemical water oxidation and effective protection of Si from corrosion at high pH (pH 13.6). A photocurrent density of 17 mA/cm(2) at 1.23 V vs RHE, saturation current density of 30 mA/cm(2), and photovoltage greater than 600 mV were achieved under simulated solar illumination. Sustained photoelectrochemical water oxidation was observed with no detectable degradation after 24 h. Enhanced performance of the nanotextured structure, compared to planar Si, is attributed to a reduced silicon oxide thickness that provides more intimate interfacial contact between the light absorber and catalyst. This work highlights a general approach to improve the performance and stability of Si photoelectrodes by engineering the catalyst/semiconductor interface. PMID:24720554

  18. Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

    SciTech Connect

    Wan, Yimao Bullock, James; Cuevas, Andres

    2015-05-18

    This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta{sub 2}O{sub 5}) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN{sub x}). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta{sub 2}O{sub 5} and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm and n-type 1.0 Ω·cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm{sup 2} and 68 fA/cm{sup 2} are measured on 150 Ω/sq boron-diffused p{sup +} and 120 Ω/sq phosphorus-diffused n{sup +} c-Si, respectively. Capacitance–voltage measurements reveal a negative fixed insulator charge density of −1.8 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5} film and −1.0 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5}/SiN{sub x} stack. The Ta{sub 2}O{sub 5}/SiN{sub x} stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.

  19. Energetics of bismuth vanadate

    SciTech Connect

    Nagabhushana, G.P.; Tavakoli, A.H.; Navrotsky, A.

    2015-05-15

    Bismuth vanadate has gained considerable interest as a photoanode for water splitting reactions under visible light. It exists in four different polymorphs, out of which three of them have been synthesized. Thermodynamic properties of these three polymorphs are investigated using high temperature oxide melt solution calorimetry. The monoclinic scheelite phase which exhibits photocatalytic activity under visible light is found to be the most stable polymorph, followed by tetragonal scheelite which exhibits activity under UV light. The photocatalytically inactive tetragonal zircon form is found to be the least stable polymorph. The small difference in enthalpy of formation between the two scheelite structures (−8 kJ/mol) is in accord with the reversibility of the transformation between them and the larger difference between the most stable monoclinic phase and the least stable tetragonal zircon phase (−23 kJ/mol) is in accord with the irreversible (monoclinic→tetragonal zircon) phase transformation. - Graphical abstract: Schematic representation of polymorphic transitions in BiVO{sub 4} along with their formation enthalpies. - Highlights: • Bismuth vanadate crystallizes in three different polymorphs. • High temperature calorimetric measurements were made to determine their formation enthalpies. • Enthalpy of formation decreases in the order BV-ms→BV-ts→BV-tz. • Photocatalytically active monoclinic-BiVO{sub 4} was found to be the most stable polymorph.

  20. Improved performance of microcrystalline silicon solar cell with graded-band-gap silicon oxide buffer layer

    NASA Astrophysics Data System (ADS)

    Shi, Zhen-Liang; Ji, Yun; Yu, Wei; Yang, Yan-Bin; Cong, Ri-Dong; Chen, Ying-Juan; Li, Xiao-Wei; Fu, Guang-Sheng

    2015-07-01

    Microcrystalline silicon (μc-Si:H) solar cell with graded band gap microcrystalline silicon oxide (μc-SiOx:H) buffer layer is prepared by plasma enhanced chemical vapor deposition and exhibits improved performance compared with the cell without it. The buffer layer moderates the band gap mismatch by reducing the barrier of the p/i interface, which promotes the nucleation of the i-layer and effectively eliminates the incubation layer, and then enhances the collection efficiency of the cell in the short wavelength region of the spectrum. The p/i interface defect density also decreases from 2.2 × 1012 cm-2 to 5.0 × 1011 cm-2. This graded buffer layer allows to simplify the deposition process for the μc-Si:H solar cell application. Project supported by the Key Basic Research Project of Hebei Province, China (Grant Nos. 12963930D and 12963929D), the Natural Science Foundation of Hebei Province, China (Grant Nos. F2013201250 and E2012201059), and the Science and Technology Research Projects of the Education Department of Hebei Province, China (Grant No. ZH2012030).

  1. Surface kinetics modeling of silicon and silicon oxide plasma etching. III. Modeling of silicon oxide etching in fluorocarbon chemistry using translating mixed-layer representation

    SciTech Connect

    Kwon, Ohseung; Bai Bo; Sawin, Herbert H.

    2006-09-15

    Silicon oxide etching was modeled using a translating mixed-layer model, a novel surface kinetic modeling technique, and the model showed good agreement with measured data. Carbon and fluorine were identified as the primary contributors to deposition and etching, respectively. Atomic fluorine flux is a major factor that determines the etching behavior. With a chemistry having a small amount of atomic fluorine (such as the C{sub 4}F{sub 8} chemistry), etching yield shows stronger dependence on the composition change in the gas flux.

  2. Studies on Thermal and Mechanical Properties of Epoxy-Silicon Oxide Hybrid Materials

    NASA Astrophysics Data System (ADS)

    Ghosh, P. K.; Kumar, Kaushal; Kumar, Arun

    2015-11-01

    Ultrasonic dual mixing (UDM) process involving ultrasonic vibration with simultaneous stirring is used to prepare epoxy-silicon oxide hybrid materials with inorganic nanoscale building blocks by incorporating nanoscale silicon oxide network in epoxy matrix. The silicon oxide network is obtained from tetraethoxysilane (TEOS) by using the in situ sol-gel process. Same epoxy-silica hybrid materials were also prepared by mixing with simple impeller stirring, and its properties were compared with the material of same composition prepared by the UDM process. The epoxy-silicon oxide hybrid materials are characterized by using FT-IR, DSC, FESEM, and XRD techniques. The glass transition temperature, tensile strength, and elastic modulus of the epoxy-silicon oxide hybrid materials treated by UDM process are found comparatively better than those of the materials processed by a rotating impeller. FESEM studies confirm that amount of TEOS varies the distribution and size of silicon oxide network, which remains relatively finer at lower content of TEOS. Significant improvement of thermal and mechanical properties of the neat epoxy is noted in the presence of 3.05 wt.% TEOS content in it is giving rise to the formation of inorganic building block of silicon oxide of size 88 ± 45 nm in the matrix. In this regard, the use of UDM process is found superior to mixing by simple impeller stirring for enhancement of properties of epoxy-silicon oxide hybrid materials. Lowering of properties of the epoxy-silicon oxide hybrid materials with TEOS addition beyond 3.05 wt.% up to 6.1 wt.% occurs primarily due to increase of amount and size (up to 170 ± 82 nm) of the inorganic building block in the matrix.

  3. Serum protein layers on parylene-C and silicon oxide: Effect on cell adhesion

    PubMed Central

    Delivopoulos, Evangelos; Ouberai, Myriam M.; Coffey, Paul D.; Swann, Marcus J.; Shakesheff, Kevin M.; Welland, Mark E.

    2015-01-01

    Among the range of materials used in bioengineering, parylene-C has been used in combination with silicon oxide and in presence of the serum proteins, in cell patterning. However, the structural properties of adsorbed serum proteins on these substrates still remain elusive. In this study, we use an optical biosensing technique to decipher the properties of fibronectin (Fn) and serum albumin adsorbed on parylene-C and silicon oxide substrates. Our results show the formation of layers with distinct structural and adhesive properties. Thin, dense layers are formed on parylene-C, whereas thicker, more diffuse layers are formed on silicon oxide. These results suggest that Fn acquires a compact structure on parylene-C and a more extended structure on silicon oxide. Nonetheless, parylene-C and silicon oxide substrates coated with Fn host cell populations that exhibit focal adhesion complexes and good cell attachment. Albumin adopts a deformed structure on parylene-C and a globular structure on silicon oxide, and does not support significant cell attachment on either surface. Interestingly, the co-incubation of Fn and albumin at the ratio found in serum, results in the preferential adsorption of albumin on parylene-C and Fn on silicon oxide. This finding is supported by the exclusive formation of focal adhesion complexes in differentiated mouse embryonic stem cells (CGR8), cultured on Fn/albumin coated silicon oxide, but not on parylene-C. The detailed information provided in this study on the distinct properties of layers of serum proteins on substrates such as parylene-C and silicon oxide is highly significant in developing methods for cell patterning. PMID:25555155

  4. Novel synthetic methodology for controlling the orientation of zinc oxide nanowires grown on silicon oxide substrates.

    PubMed

    Cho, Jinhyun; Salleh, Najah; Blanco, Carlos; Yang, Sungwoo; Lee, Chul-Jin; Kim, Young-Woo; Kim, Jungsang; Liu, Jie

    2014-04-01

    This study presents a simple method to reproducibly obtain well-aligned vertical ZnO nanowire arrays on silicon oxide (SiOx) substrates using seed crystals made from a mixture of ammonium hydroxide (NH4OH) and zinc acetate (Zn(O2CCH3)2) solution. In comparison, high levels of OH(-) concentration obtained using NaOH or KOH solutions lead to incorporation of Na or K atoms into the seed crystals, destroying the c-axis alignment of the seeds and resulting in the growth of misaligned nanowires. The use of NH4OH eliminates the metallic impurities and ensures aligned nanowire growth in a wide range of OH(-) concentrations in the seed solution. The difference of crystalline orientations between NH4OH- and NaOH-based seeds is directly observed by lattice-resolved images and electron diffraction patterns using a transmission electron microscope (TEM). This study obviously suggests that metallic impurities incorporated into the ZnO nanocrystal seeds are one of the factors that generates the misaligned ZnO nanowires. This method also enables the use of silicon oxide substrates for the growth of vertically aligned nanowires, making ZnO nanostructures compatible with widely used silicon fabrication technology. PMID:24584438

  5. Photocurrent spectroscopy of Ge nanoclusters grown on oxidized silicon surface

    NASA Astrophysics Data System (ADS)

    Mykytiuk, A. A.; Kondratenko, S. V.; Lysenko, V. S.; Kozyrev, Yu. N.

    2014-05-01

    Germanium (Ge) nanoclusters are grown by a molecular-beam epitaxy technique on chemically oxidized Si(100) surface at 700ºC. Evidence for long-term photoinduced changes of surface conductivity in structures with Ge nanoclusters (NCs) grown on silicon oxide is presented. Photoexcitation NCs or Si by quanta with different energy allows observing two non-equilibrium steady-states with excess and shortage of conductivity values as compare to equilibrium one. The persistent photoconductivity (PPC) behaviour was observed after interband excitation of electron-hole pairs in Si(001) substrate. This effect may be attributed to spatial carrier separation of photoexcited electron-hole pairs by macroscopic fields in the depletion layer of near-surface Si. Photoquenching of surface conductivity, driven by optical recharging of Ge NC's and Si/SiO2 interface states, is observed. Conductivity decay is discussed in the terms of hole`s accumulation by Ge-NC states enhancing the local-potential variations and, therefore, decreasing the surface conductivity of p-Si.

  6. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

    SciTech Connect

    Dargis, Rytis Clark, Andrew; Erdem Arkun, Fevzi; Grinys, Tomas; Tomasiunas, Rolandas; O'Hara, Andy; Demkov, Alexander A.

    2014-07-01

    Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.

  7. High-temperature oxidation behavior of reaction-formed silicon carbide ceramics

    NASA Technical Reports Server (NTRS)

    Ogbuji, Linus U. J. T.; Singh, M.

    1995-01-01

    The oxidation behavior of reaction-formed silicon carbide (RFSC) ceramics was investigated in the temperature range of 1100 to 1400 C. The oxidation weight change was recorded by TGA; the oxidized materials were examined by light and electron microscopy, and the oxidation product by x-ray diffraction analysis (XRD). The materials exhibited initial weight loss, followed by passive weight gain (with enhanced parabolic rates, k(sub p)), and ending with a negative (logarithmic) deviation from the parabolic law. The weight loss arose from the oxidation of residual carbon, and the enhanced k(sub p) values from internal oxidation and the oxidation of residual silicon, while the logarithmic kinetics is thought to have resulted from crystallization of the oxide. The presence of a small amount of MoSi, in the RFSC material caused a further increase in the oxidation rate. The only solid oxidation product for all temperatures studied was silica.

  8. Energetics of bismuth vanadate

    NASA Astrophysics Data System (ADS)

    Nagabhushana, G. P.; Tavakoli, A. H.; Navrotsky, A.

    2015-05-01

    Bismuth vanadate has gained considerable interest as a photoanode for water splitting reactions under visible light. It exists in four different polymorphs, out of which three of them have been synthesized. Thermodynamic properties of these three polymorphs are investigated using high temperature oxide melt solution calorimetry. The monoclinic scheelite phase which exhibits photocatalytic activity under visible light is found to be the most stable polymorph, followed by tetragonal scheelite which exhibits activity under UV light. The photocatalytically inactive tetragonal zircon form is found to be the least stable polymorph. The small difference in enthalpy of formation between the two scheelite structures (-8 kJ/mol) is in accord with the reversibility of the transformation between them and the larger difference between the most stable monoclinic phase and the least stable tetragonal zircon phase (-23 kJ/mol) is in accord with the irreversible (monoclinic→tetragonal zircon) phase transformation.

  9. Sub-50 nm positioning of organic compounds onto silicon oxide patterns fabricated by local oxidation nanolithography.

    PubMed

    Losilla, N S; Oxtoby, N S; Martinez, J; Garcia, F; Garcia, R; Mas-Torrent, M; Veciana, J; Rovira, C

    2008-11-12

    We present a process to fabricate molecule-based nanostructures by merging a bottom-up interaction and a top-down nanolithography. Direct nanoscale positioning arises from the attractive electrostatic interactions between the molecules and silicon dioxide nanopatterns. Local oxidation nanolithography is used to fabricate silicon oxide domains with variable gap separations ranging from 40 nm to several microns in length. We demonstrate that an ionic tetrathiafulvalene (TTF) semiconductor can be directed from a macroscopic liquid solution (1 µM) and selectively deposited onto predefined nanoscale regions of a 1 cm(2) silicon chip with an accuracy of 40 nm. PMID:21832773

  10. Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1979-01-01

    In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. gi The Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.

  11. Topology of an anodically formed oxide film on a silicon single crystal

    NASA Astrophysics Data System (ADS)

    Orlov, A. M.; Yavtushenko, I. O.; Makhmud-Akhunov, M. Yu.

    2015-08-01

    The results of investigations of the morphological properties of an oxide film formed on single-crystal silicon by anodic oxidation in distilled water in the potential-controlled mode have been presented. It has been established that the oxide film is always formed in the form of separate islands, the shape of which depends on the substrate orientation irrespective of the applied potential.

  12. Silicon nanoprofiling with the use of a solid aluminum oxide mask and combined 'dry' etching

    SciTech Connect

    Belov, A. N.; Demidov, Yu. A.; Putrya, M. G.; Golishnikov, A. A.; Vasilyev, A. A.

    2009-12-15

    Technological features of nanoprofiling of silicon protected by a solid mask based on porous aluminum oxide are considered. It is shown that, for a nanoprofiled silicon surface to be formed, it is advisable that combined dry etching be used including preliminary bombardment of structures with accelerated neutral atoms of an inert gas followed by reactive ion etching.

  13. Assessment of the influence of surface finishing and weld joints on the corrosion/oxidation behaviour of stainless steels in lead bismuth eutectic

    NASA Astrophysics Data System (ADS)

    Martín-Muñoz, F. J.; Soler-Crespo, L.; Gómez-Briceño, D.

    2011-09-01

    The objective of this paper is to gain some insight into the influence of the surface finishing in the oxidation/corrosion behaviour of 316L and T91 steels in lead bismuth eutectic (LBE). Specimens of both materials with different surface states were prepared (as-received, grinded, grinded and polished, and electrolitically polished) and oxidation tests were carried out at 775 and 825 K from 100 to 2000 h for two different oxygen concentrations and for H 2/H 2O molar ratios of 3 and 0.03. The general conclusion for these tests is that the effect of surface finishing on the corrosion/protection processes is not significant under the tested conditions. In addition the behaviour of weld joints, T91-T91 Tungsten Inert Gas (TIG) and T91-316L have been also studied under similar conditions. The conclusions are that, whereas T91-T91 welded joint shows the same corrosion properties as the parent materials for the conditions tested, AISI 316L-T91 welded joint, present an important dissolution over seam area that it associated to the electrode 309S used for the fabrication process.

  14. A promising biosensing-platform based on bismuth oxide polycrystalline-modified electrode: characterization and its application in development of amperometric glucose sensor.

    PubMed

    Ding, Shou-Nian; Shan, Dan; Xue, Huai-Guo; Cosnier, Serge

    2010-10-01

    Nano-structured bismuth oxide (nano-BiOx) is a suitable material for enzyme immobilization owing to its attractive properties, such as large specific surface area, suitable permeability of the resulting film, the high biocompatibility, and as well as photovoltaic effect from semiconductor nanoparticles. Thus, a new type of amperometric glucose biosensor based on nano-BiOx was constructed. The amperometric detection of glucose was assayed by potentiostating the GOD/nano-BiOx electrode at 0.5 V to oxidize the enzymatically generated hydrogen peroxide. The proposed biosensor provided a linear response to glucose over a concentration range of 1 x 10(-6) M to 1.5 x 10(-3) M with a sensitivity of 51.0+/-0.4 mA/(M cm(2)) and a detection limit of 4 x 10(-7) M based on S/N=3. The apparent Michaelis-Menten constant was calculated to be 2.9 x 10(-3) M. In addition, characterization of nano-BiOx and modified electrode was performed by FT-IR spectroscopy, Raman spectroscopy, scanning electron microscope (SEM) and rotating-disk electrode (RDE) voltammetry. PMID:20541478

  15. Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

    SciTech Connect

    Fiorentino, Giuseppe Morana, Bruno; Forte, Salvatore; Sarro, Pasqualina Maria

    2015-01-15

    In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

  16. The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments

    NASA Astrophysics Data System (ADS)

    Rebohle, L.; Berencén, Y.; Wutzler, R.; Braun, M.; Hiller, D.; Ramírez, J. M.; Garrido, B.; Helm, M.; Skorupa, W.

    2014-09-01

    Rare earth doped metal-oxide-semiconductor (MOS) structures are of great interest for Si-based light emission. However, several physical limitations make it difficult to achieve the performance of light emitters based on compound semiconductors. To address this point, in this work the electroluminescence (EL) excitation and quenching mechanism of Er-implanted MOS structures with different designs of the dielectric stack are investigated. The devices usually consist of an injection layer made of SiO2 and an Er-implanted layer made of SiO2, Si-rich SiO2, silicon nitride, or Si-rich silicon nitride. All structures implanted with Er show intense EL around 1540 nm with EL power efficiencies in the order of 2 × 10-3 (for SiO2:Er) or 2 × 10-4 (all other matrices) for lower current densities. The EL is excited by the impact of hot electrons with an excitation cross section in the range of 0.5-1.5 × 10-15 cm-2. Whereas the fraction of potentially excitable Er ions in SiO2 can reach values up to 50%, five times lower values were observed for other matrices. The decrease of the EL decay time for devices with Si-rich SiO2 or Si nitride compared to SiO2 as host matrix implies an increase of the number of defects adding additional non-radiative de-excitation paths for Er3+. For all investigated devices, EL quenching cross sections in the 10-20 cm2 range and charge-to-breakdown values in the range of 1-10 C cm-2 were measured. For the present design with a SiO2 acceleration layer, thickness reduction and the use of different host matrices did not improve the EL power efficiency or the operation lifetime, but strongly lowered the operation voltage needed to achieve intense EL.

  17. Microstructure, toughness and flexural strength of self-reinforced silicon nitride ceramics doped with yttrium oxide and ytterbium oxide.

    PubMed

    Zheng, Y. S.; Knowles, K. M.; Vieira, J. M.; Lopes, A. B.; Oliveira, F. J.

    2001-02-01

    Self-reinforced silicon nitride ceramics with additions of either yttrium oxide or ytterbium oxide have been investigated at room temperature after various processing heat treatments. Devitrification of the intergranular phase in these materials is very sensitive to the heat treatment used during processing and does not necessarily improve their strength and toughness. Hot-pressed ceramics without a subsequent devitrification heat treatment were the strongest. The ytterbium oxide-doped silicon nitride ceramics were consistently tougher, but less strong, than the yttrium oxide-doped silicon nitride ceramics. In all the ceramics examined, the fracture toughness showed evidence for R-curve behaviour. This was most significant in pressureless sintered ytterbium oxide-doped silicon nitride ceramics. A number of toughening mechanisms, including crack deflection, bridging, and fibre-like grain pull-out, were observed during microstructural analysis of the ceramics. In common with other silicon nitride-based ceramics, thin amorphous films were found at the grain boundaries in each of the ceramics examined. Arrays of dislocations left in the elongated silicon nitride grains after processing were found to belong to the {101;0}<0001> primary slip system. PMID:11207926

  18. Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

    NASA Astrophysics Data System (ADS)

    Li, Shaoyuan; Ma, Wenhui; Zhou, Yang; Chen, Xiuhua; Xiao, Yongyin; Ma, Mingyu; Wei, Feng; Yang, Xi

    2014-05-01

    In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO3 system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO3 concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWs is significantly reduced when Ag+ ions concentrations are too high. The deposition behaviors of Ag+ ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon.

  19. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, K.

    1992-01-01

    This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

  20. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, Ken

    1994-01-01

    An iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100.degree. C.

  1. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, K.

    1994-12-27

    An iron-based alloy is described containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100 C. 8 figures.

  2. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  3. Synchrotron x-ray reflectivity study of oxidation/passivation of copper and silicon.

    SciTech Connect

    Chu, Y.; Nagy, Z.; Parkhutik, V.; You, H.

    1999-07-21

    Synchrotron x-ray-scattering technique studies of copper and silicon electrochemical interfaces are reported. These two examples illustrate the application of synchrotron x-ray techniques for oxidation, passivation, and dissolution of metals and semiconductors.

  4. Large area nanoscale patterning of silicon surfaces by parallel local oxidation.

    PubMed

    Losilla, N S; Martínez, J; García, R

    2009-11-25

    The homogeneity and the reproducibility of parallel local oxidation have been improved by introducing a thin film of polymethylmethacrylate (PMMA) between the stamp and the silicon surface. The flexibility of the polymer film enables a homogeneous contact of the stamp with the silicon surface to be achieved. The oxides obtained yield better aspect ratios compared with the ones created with no PMMA layer. The pattern is formed when a bias voltage is applied between the stamp and the silicon surface for 1 min. The patterning can be done by a step and repeat technique and is reproducible across a centimetre length scale. Once the oxide nanostructures have been created, the polymer is removed by etching in acetone. Finally, parallel local oxidation is applied to fabricate silicon nanostructures and templates for the growth of organic molecules. PMID:19875876

  5. Modelling and engineering of stress based controlled oxidation effects for silicon nanostructure patterning

    NASA Astrophysics Data System (ADS)

    Han, Xiang-Lei; Larrieu, Guilhem; Krzeminski, Christophe

    2013-12-01

    Silicon nanostructure patterning with tight geometry control is an important challenge at the bottom level. In that context, stress based controlled oxidation appears to be an efficient tool for precise nanofabrication. Here, we investigate the stress-retarded oxidation phenomenon in various silicon nanostructures (nanobeams, nanorings and nanowires) at both the experimental and the theoretical levels. Different silicon nanostructures have been fabricated by a top-down approach. Complex dependence of the stress build-up on the nano-objects dimension, shape and size has been demonstrated experimentally and physically explained by modelling. For the oxidation of a two-dimensional nanostructure (nanobeam), relative independence to size effects has been observed. On the other hand, radial stress increase with geometry downscaling of a one-dimensional nanostructure (nanowire) has been carefully emphasized. The study of shape engineering by retarded oxidation effects for vertical silicon nanowires is finally discussed.

  6. Reduction of Zinc Oxide Thin Films to Form Zinc Metallic Seeds for Silicon Nanowire Growth

    NASA Astrophysics Data System (ADS)

    Gerstenberger, Louis

    2009-10-01

    A method for reduction of poly-crystalline zinc oxide films to generate uniform pure zinc particles for VLS (vapor-liquid-solid) growth of silicon nanowires is presented. A uniform zinc oxide film is sputtered onto a glass substrate and then treated in a plasma reducing environment at 419 ^oC to produce pure zinc metal particles on the films surface. These particles may act as the liquid metal catalyst required for VLS growth of oriented silicon nanowires.

  7. Alternative method for steam generation for thermal oxidation of silicon

    NASA Astrophysics Data System (ADS)

    Spiegelman, Jeffrey J.

    2010-02-01

    Thermal oxidation of silicon is an important process step in MEMS device fabrication. Thicker oxide layers are often used as structural components and can take days or weeks to grow, causing high gas costs, maintenance issues, and a process bottleneck. Pyrolytic steam, which is generated from hydrogen and oxygen combustion, was the default process, but has serious drawbacks: cost, safety, particles, permitting, reduced growth rate, rapid hydrogen consumption, component breakdown and limited steam flow rates. Results from data collected over a 24 month period by a MEMS manufacturer supports replacement of pyrolytic torches with RASIRC Steamer technology to reduce process cycle time and enable expansion previously limited by local hydrogen permitting. Data was gathered to determine whether Steamers can meet or exceed pyrolytic torch performance. The RASIRC Steamer uses de-ionized water as its steam source, eliminating dependence on hydrogen and oxygen. A non-porous hydrophilic membrane selectively allows water vapor to pass. All other molecules are greatly restricted, so contaminants in water such as dissolved gases, ions, total organic compounds (TOC), particles, and metals can be removed in the steam phase. The MEMS manufacturer improved growth rate by 7% over the growth range from 1μm to 3.5μm. Over a four month period, wafer uniformity, refractive index, wafer stress, and etch rate were tracked with no significant difference found. The elimination of hydrogen generated a four-month return on investment (ROI). Mean time between failure (MTBF) was increased from 3 weeks to 32 weeks based on three Steamers operating over eight months.

  8. Integration of functional complex oxides on silicon using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Posadas, Agham; Choi, Miri; Dargis, Rytis; Demkov, Alex

    2010-03-01

    Complex oxides exhibit a wide range of electronic properties, including high temperature superconductivity, colossal magnetoresistance, metal-insulator transitions, ferromagnetism, and ferroelectricity. Interesting devices and sensors could be envisioned by fabricating these oxides in epitaxial, thin film form on silicon, the most widely used materials platform for electronic devices. However, integrating the functionality of complex oxides onto silicon turns out to be a very difficult problem. One needs to be able to deposit an oxide in crystalline form on top of silicon without forming SiO2, which grows amorphous and destroys the underlying crystalline order of the substrate surface causing subsequently deposited films to be highly defective. In this talk, we will first describe the new oxide molecular beam epitaxy capabilities at the Materials Physics Laboratory in UT Austin, and then briefly discuss a process by which one can smoothly transition from the oxygen-sensitive, covalently bonded silicon substrate to a fully oxidized, ionically bonded perovskite oxide layer (SrTiO3) using a carefully sequenced deposition of various atomic layers. This capability opens up the possibility of depositing these functional oxide materials in epitaxial form onto silicon.

  9. Resistive Switching and Memory effects in Silicon Oxide Based Nanostructures

    NASA Astrophysics Data System (ADS)

    Yao, Jun

    Silicon oxide (SiOx 1 < x ≦2) has long been used and considered as a passive and insulating component in the construction of electronic devices. In contrast, here the active role of SiOx in constructing a type of resistive switching memory is studied. From electrode-independent electrical behaviors to the visualization of the conducting filament inside the SiOx matrix, the intrinsic switching picture in SiOx is gradually revealed. The thesis starts with the introduction of some similar phenomenological switching behaviors in different electronic structures (Chapter 1), and then generalizes the electrode-material-independent electrical behaviors on SiOx substrates, providing indirect evidence to the intrinsic SiOx switching (Chapter 2). From planar nanogap systems to vertical sandwiched structures, Chapter 3 further discusses the switching behaviors and properties in SiOx. By localization of the switching site, the conducting filament in SiOx is visualized under transmission electron microscope using both static and in situ imaging methods (Chapter 4). With the intrinsic conduction and switching in SiO x largely revealed, Chapter 5 discusses its impact and implications to the molecular electronics and nanoelectronics where SiOx is constantly used. As comparison, another type of memory effect in semiconductors (carbon nanotubes) based on charge trapping at the semiconductor/SiO x interface is discussed (Chapter 6).

  10. Silicon oxide permeation barrier coating of PET bottles and foils

    NASA Astrophysics Data System (ADS)

    Steves, Simon; Deilmann, Michael; Awakowicz, Peter

    2009-10-01

    Modern packaging materials such as polyethylene terephthalate (PET) have displaced established materials in many areas of food and beverage packaging. Plastic packing materials offer are various advantages concerning production and handling. PET bottles for instance are non-breakable and lightweight compared to glass and metal containers. However, PET offers poor barrier properties against gas permeation. Therefore, the shelf live of packaged food is reduced. Permeation of gases can be reduced by depositing transparent plasma polymerized silicon oxide (SiOx) barrier coatings. A microwave (2.45 GHz) driven low pressure plasma reactor is developed based on a modified Plasmaline antenna to treat PET foils or bottles. To increase the barrier properties of the coatings furthermore a RF substrate bias (13.56 MHz) is applied. The composition of the coatings is analyzed by means of Fourier transform infrared (FTIR) spectroscopy regarding carbon and hydrogen content. Influence of gas phase composition and substrate bias on chemical composition of the coatings is discussed. A strong relation between barrier properties and film composition is found: good oxygen barriers are observed as carbon content is reduced and films become quartz-like. Regarding oxygen permeation a barrier improvement factor (BIF) of 70 is achieved.

  11. Electrical characterization of hydrogenated amorphous silicon oxide films

    NASA Astrophysics Data System (ADS)

    Itoh, Takashi; Katayama, Ryuichi; Yamakawa, Koki; Matsui, Kento; Saito, Masaru; Sugiyama, Shuhichiroh; Sichanugrist, Porponth; Nonomura, Shuichi; Konagai, Makoto

    2015-08-01

    The electrical characterization of hydrogenated amorphous silicon oxide (a-SiOx:H) films was performed by electron spin resonance (ESR) and electrical conductivity measurements. In the ESR spectra of the a-SiOx:H films, two ESR peaks with g-values of 2.005 and 2.013 were observed. The ESR peak with the g-value of 2.013 was not observed in the ESR spectra of a-Si:H films. The photoconductivity of the a-SiOx:H films decreased with increasing spin density estimated from the ESR peak with the g-value of 2.005. On the other hand, photoconductivity was independent of spin density estimated from the ESR peak with the g-value of 2.013. The optical absorption coefficient spectra of the a-SiOx:H films were also measured. The spin density estimated from the ESR peak with the g-value of 2.005 increased proportionally with increasing optical absorption owing to the gap-state defect.

  12. Degenerate epitaxy-driven defects in monolayer silicon oxide on ruthenium

    NASA Astrophysics Data System (ADS)

    Mathur, Shashank; Vlaic, Sergio; Machado-Charry, Eduardo; Vu, Anh-Duc; Guisset, Valérie; David, Philippe; Hadji, Emmanuel; Pochet, Pascal; Coraux, Johann

    2015-10-01

    The structure of the ultimately thin crystalline allotrope of silicon oxide, prepared on a ruthenium surface, is unveiled down to the atomic scale with chemical sensitivity, owing to high resolution scanning tunneling microscopy and first principles calculations. An ordered oxygen lattice is imaged which coexists with the two-dimensional monolayer oxide. This coexistence signals a displacive transformation from an oxygen-reconstructed Ru(0001) to silicon oxide, along which laterally shifted domains form, each with equivalent and degenerate epitaxial relationships with the substrate. The unavoidable character of defects at the boundaries between these domains appeals for the development of alternative methods capable of producing single-crystalline two-dimensional oxides.

  13. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  14. Microstructural aspects and oxidation behavior of laser surface cladded silicon-containing stainless steels

    SciTech Connect

    Lin, S.A.; Lee, J.T.; Tsai, W.T.

    1998-01-13

    It is known that silicon is a strong ferrite stabilizer for stainless steels (SS). The beneficial effect of silicon on enhancing mechanical properties, aqueous corrosion resistance and high temperature oxidation resistance of stainless steels is also well recognized. Therefore, the alloying of silicon to stainless steels is of great interest to researchers. By employing a laser surface alloying technique, Tsai et al. have successfully demonstrated that silicon addition to stainless steels, either austenitic or ferritic, could be achieved. They have found that silicon contents as high as 20 wt% could be produced by laser surface alloying (LSA). Laser surface cladding (LSC) of nitrogen and silicon containing stainless steels on carbon steel has also been reported. In these studies, the use of Si{sub 3}N{sub 4} was essential to silicon alloying. For both LSA and LSC alloys, their properties are dependent upon the chemical compositions and microstructures. In the present investigation, silicon-containing stainless steels produced by laser melting of the Fe-Cr-Ni-Si mixed powders on carbon steel is attempted. The chemical composition and the microstructure of the LSC layers produced are analyzed. The oxidation behavior of the laser cladded stainless steels with different silicon content is also examined.

  15. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    NASA Astrophysics Data System (ADS)

    Torres Sevilla, G. A.; Almuslem, A. S.; Gumus, A.; Hussain, A. M.; Cruz, M. E.; Hussain, M. M.

    2016-02-01

    Thinned silicon based complementary metal oxide semiconductor (CMOS) electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOS inverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible silicon CMOS inverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  16. Critical issues of complex, epitaxial oxide growth and integration with silicon by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lettieri, James

    Molecular beam epitaxy was used to grow epitaxial oxides on silicon substrates. The growth of BaO, SrO, EuO, and SrTiO3 are discussed with a focus on the general theme of integration of functional, epitaxial oxides into a silicon environment. Oxidation studies of various metal systems relevant for oxide on silicon epitaxy and integration are reported. Results demonstrate the catalytic nature of an alkaline earth metal at small concentrations to enable the oxidation of the poorly oxidizing metals at pressures lower than during deposition of the pure metal alone. Results from the deposition of various elements are presented. The aspects of the growth of alkaline earth oxides on silicon are explained. The transition from the silicon to the alkaline earth oxide as described through reflection high energy electron diffraction (RHEED) is presented and used to understand issues related to each stage of the growth. High quality, commensurate alkaline earth oxides are grown on silicon at room temperature and P O2 background ˜ 3 x 10-8 Torr. The growth of alkaline earth and rare earth oxide solid solutions and rare earth oxides (EuO) are described. The first reported epitaxial EuO on silicon is reported, enabled by the use of a thin buffer layer (13 A) of SrO. Using a strategy of transition from simple structures to the more complex, the growth of a perovskite (SrTiO3) on silicon is demonstrated. Growth of a structurally optimized perovskite structure entails the transformation of a thin interfacial alkaline earth oxide layer into the initial perovskite cells. SrTiO3 and La-doped SrTiO3 on silicon are used to integrate a piezoelectric relevant for microelectromechanical systems (MEMS) applications and a ferroelectric relevant for a ferroelectric random access memory (FRAM) architecture. A d33 value of over 400 pm/V under bias is measured for the piezoelectric (Pb(Mn1/3Nb 2/3)O3 -PbTiO3) and a remanent polarization of 25 muC/cm2 and fatigue free behavior (>1012 cycles) for a low temperature (450°C) deposited ferroelectric (Pb(Zr,Ti)O 3) is obtained. Initial work concerning the growth of even more complex structures such as conducting and ferroelectric superlattices are described. Short period superlattices of LaTiO3 and SrTiO3 are successfully grown.

  17. Atomic layer deposition of bismuth oxide using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O

    SciTech Connect

    Austin, Dustin Z. Conley, John F.; Allman, Derryl; Price, David; Hose, Sallie; Saly, Mark

    2014-01-15

    Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O at deposition temperatures between 90 and 270 °C on Si{sub 3}N{sub 4}, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi{sub 2}O{sub 3} films deposited at 150 °C have a linear growth per cycle of 0.039 nm/cycle, density of 8.3 g/cm{sup 3}, band gap of approximately 2.9 eV, low carbon content, and show the β phase structure with a (201) preferred crystal orientation. Deposition temperatures above 210 °C and postdeposition anneals caused uneven volumetric expansion, resulting in a decrease in film density, increased interfacial roughness, and degraded optical properties.

  18. Method for one-to-one polishing of silicon nitride and silicon oxide

    NASA Technical Reports Server (NTRS)

    Babu, Suryadevara V. (Inventor); Natarajan, Anita (Inventor)

    2009-01-01

    The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

  19. Gas-phase formation of silicon carbides, oxides, and sulphides from atomic silicon ions

    NASA Technical Reports Server (NTRS)

    Bohme, Diethard K.; Wlodek, Stanislaw; Fox, Arnold

    1989-01-01

    A systematic experimental study of the kinetics and mechanisms of the chemical reactions in the gas phase between ground-state Si(+)2p and a variety of astrophysical molecules. The aim of this study is to identify the reactions which trigger the formation of chemical bonds between silicon and carbon, oxygen and sulphur, and the chemical pathways which lead to further molecular growth. Such knowledge is valuable in the identification of new extraterrestrial silicon-bearing molecules and for an assessment of the gas-phase transition from atomic silicon to silicon carbide and silicate grain particles in carbon-rich and oxygen-rich astrophysical environments.

  20. Bismuth-doped tin oxide-coated carbon nanotube network: improved anode stability and efficiency for flow-through organic electrooxidation.

    PubMed

    Liu, Han; Vajpayee, Akshay; Vecitis, Chad D

    2013-10-23

    In this study, a binder-free, porous, and conductive 3D carbon-nanotube (CNT) network uniformly coated with bismuth-doped tin oxide (BTO) nanoparticles was prepared via a simple electrosorption-hydrothermal method and utilized for the electrooxidative filtration of organics. The BTO-CNT nanocomposite was characterized by scanning electron microscopy, thermogravimetric analysis, transmission electron microscopy, X-ray photoelectron spectroscopy, linear sweep voltammetry, and Tafel analysis. The submonolayer BTO coating is composed of 3.91.5 nm diameter nanoparticles (NPs). The oxygen-evolution potential of the BTO-CNT nanocomposite was determined to be 1.71 V (vs Ag/AgCl), which is 440 mV higher than an uncoated CNT anode. Anodic stability, characterized by CNT oxidative corrosion to form dissolved species, indicated that the BTO-CNT incurred negligible corrosion up to Vanode=2.2 V, whereas the uncoated CNT was compromised at Vanode?1.4 V. The effect of metal oxide-nanoparticle coating on anodic performance was initially studied by oxalate oxidation followed by total organic carbon (TOC) and chemical oxygen demand (COD) analysis. The BTO-CNT displayed the best performance, with ?98% oxalate oxidation (1.2 s filter residence time) and current efficiencies in the range of 32 to >99%. The BTO-CNT anode energy consumption was 25.7 kW h kgCOD(-1) at ?93% TOC removal and 8.6 kW h kgCOD(-1) at ?50% TOC removal, comparable to state-of-the-art oxalate oxidation processes (22.5-81.7 kW h kgCOD(-1)). The improved reactivity, current efficiency, and energy consumption are attributed to the increased conductivity, oxygen-evolution potential, and stability of the BTO-CNT anode. The effectiveness and efficiency of the BTO-CNT anode as compared to the uncoated CNT was further investigated by the electrooxidative filtration of ethanol, methanol, formaldehyde, and formate, and it was determined to have TOC removals 2 to 8 times greater, mineralization current efficiencies 1.5 to 3.5 times greater, and energy consumption 4 to 5 times less than the uncoated CNT anode. Electrooxidation and anode passivation mechanisms are discussed. PMID:24040859

  1. Characterization of polycrystalline silicon-oxide-nitride-oxide-silicon devices on a SiO2 or Si3N4 buffer layer

    NASA Astrophysics Data System (ADS)

    Lee, Sang-Youl; Oh, Jae-Sub; Yang, Seung-Dong; Yun, Ho-Jin; Jeong, Kwang-Seok; Kim, Yu-Mi; Lee, Hi-Deok; Lee, Ga-Won

    2013-10-01

    Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices were fabricated from polycrystalline silicon (poly-Si) using the solid phase crystallization (SPC) method for use in a low-power system-on-panel (SOP) display. In these poly-Si SONOS memories, oxide or nitride was used as a buffer layer. The electrical characteristics, such as the threshold voltage ( V T ), subthreshold slope ( SS) and transconductance ( g m ), were determined for each SONOS device. To interpret the characteristics of both poly-Si devices, x-ray diffraction (XRD) measurements and flicker noise analysis were conducted. The results show that the poly-Si SONOS on the oxide layer has better electrical, memory characteristics, such as turn-on speed and g m , program/erase, endurance and data retention than that on the nitride layer. From the XRD measurements, it is shown that the grain size of the poly-Si on the oxide layer is larger than that on the nitride layer. From the flicker noise analysis, the poly-Si device on oxide was shown to have less traps or defects in the channel layer than that on nitride.

  2. Bismuth-doped germanosilicate fibre laser with 20-W output power at 1460 nm

    SciTech Connect

    Firstov, Sergei V; Shubin, Aleksei V; Khopin, V F; Mel'kumov, Mikhail A; Bufetov, Igor' A; Medvedkov, O I; Gur'yanov, Aleksei N; Dianov, Evgenii M

    2011-07-31

    We report the first cw bismuth - germanium codoped silica fibre laser with an output power above 20 W at 1460 nm and 50% optical efficiency. The laser operates on a transition between energy levels of bismuth-related active centres associated with silicon. The incorporation of a small amount ({approx}5 mol %) of germanium into the core of bismuth-doped silica fibre has little effect on its luminescence spectrum but reduces optical losses, which limit the laser efficiency. (letters)

  3. Parallel-local anodic oxidation of silicon surfaces by soft stamps.

    PubMed

    Albonetti, Cristiano; Martinez, Javier; Losilla, Nuria S; Greco, Pierpaolo; Cavallini, Massimiliano; Borgatti, Francesco; Montecchi, Monica; Pasquali, Luca; Garcia, Ricardo; Biscarini, Fabio

    2008-10-29

    We investigate the fabrication of nanometric patterns on silicon surfaces by using the parallel-local anodic oxidation technique with soft stamps. This method yields silicon oxide nanostructures 15nm high, namely at least five times higher than the nanostructures made with local anodic oxidation using atomic force microscopy, and thanks to the size of the stamp enables one to pattern the surface across a centimetre length scale. To implement this technique, we built a machine to bring the metallized polydimethylsiloxane stamp in contact with the silicon surface, subsequently inserted in a sealed chamber with controlled relative humidity. The oxide nanostructures are fabricated when a bias voltage of 36V is applied between the stamp and the silicon for 2min, with a relative humidity of 90%. The flexibility of the stamp enables a homogeneous conformal contact with the silicon surface, resulting in an excellent reproducibility of the process. Moreover, by means of two subsequent oxidations with the same stamp and just rotating the sample, we are able to fabricate complex nanostructures. Finally, a detailed study of the oxidation mechanism, also using a finite element analysis, has been performed to understand the underlying mechanism. PMID:21832690

  4. The complex interface chemistry of thin-film silicon/zinc oxide solar cell structures.

    PubMed

    Gerlach, D; Wimmer, M; Wilks, R G; Félix, R; Kronast, F; Ruske, F; Bär, M

    2014-12-21

    The interface between solid-phase crystallized phosphorous-doped polycrystalline silicon (poly-Si(n(+))) and aluminum-doped zinc oxide (ZnO:Al) was investigated using spatially resolved photoelectron emission microscopy. We find the accumulation of aluminum in the proximity of the interface. Based on a detailed photoemission line analysis, we also suggest the formation of an interface species. Silicon suboxide and/or dehydrated hemimorphite have been identified as likely candidates. For each scenario a detailed chemical reaction pathway is suggested. The chemical instability of the poly-Si(n(+))/ZnO:Al interface is explained by the fact that SiO2 is more stable than ZnO and/or that H2 is released from the initially deposited a-Si:H during the crystallization process. As a result, Zn (a deep acceptor in silicon) is "liberated" close to the silicon/zinc oxide interface presenting the inherent risk of forming deep defects in the silicon absorber. These could act as recombination centers and thus limit the performance of silicon/zinc oxide based solar cells. Based on this insight some recommendations with respect to solar cell design, material selection, and process parameters are given for further knowledge-based thin-film silicon device optimization. PMID:25363298

  5. Improvement of plasmonic enhancement of quantum dot emission via an intermediate silicon-aluminum oxide interface

    SciTech Connect

    Wing, Waylin J.; Sadeghi, Seyed M. Campbell, Quinn

    2015-01-05

    We studied the emission of quantum dots in the presence of plasmon-metal oxide substrates, which consist of arrays of metallic nanorods embedded in amorphous silicon coated with a nanometer-thin layer of aluminum oxide on the top. We showed that the combined effects of plasmons and the silicon-aluminum oxide interface can lead to significant enhancement of the quantum efficiency of quantum dots. Our results show that such an interface can significantly enhance plasmonic effects of the nanorods via quantum dot-induced exciton-plasmon coupling, leading to partial polarization of the quantum dots' emission.

  6. Evaluation of transition metal oxide as carrier-selective contacts for silicon heterojunction solar cells

    SciTech Connect

    Ding, L.; Boccard, Matthieu; Holman, Zachary; Bertoni, M.

    2015-04-06

    "Reducing light absorption in the non-active solar cell layers, while enabling the extraction of the photogenerated minority carriers at quasi-Fermi levels are two key factors to improve current generation and voltage, and therefore efficiency of silicon heterojunction solar devices. To address these two critical aspects, transition metal oxide materials have been proposed as alternative to the n- and p-type amorphous silicon used as electron and hole selective contacts, respectively. Indeed, transition metal oxides such as molybdenum oxide, titanium oxide, nickel oxide or tungsten oxide combine a wide band gap typically over 3 eV with a band structure and theoretical band alignment with silicon that results in high transparency to the solar spectrum and in selectivity for the transport of only one carrier type. Improving carrier extraction or injection using transition metal oxide has been a topic of investigation in the field of organic solar cells and organic LEDs; from these pioneering works a lot of knowledge has been gained on materials properties, ways to control these during synthesis and deposition, and their impact on device performance. Recently, the transfer of some of this knowledge to silicon solar cells and the successful application of some metal oxide to contact heterojunction devices have gained much attention. In this contribution, we investigate the suitability of various transition metal oxide films (molybdenum oxide, titanium oxide, and tungsten oxide) deposited either by thermal evaporation or sputtering as transparent hole or electron selective transport layer for silicon solar cells. In addition to systematically characterize their optical and structural properties, we use photoemission spectroscopy to relate compound stoichiometry to band structure and characterize band alignment to silicon. The direct silicon/metal oxide interface is further analyzed by quasi-steady state photoconductance decay method to assess the quality of surface passivation. In complement, we construct full device structures incorporating in some cases surface passivation schemes, with measured initial conversion efficiency over 15% and evaluate the carrier transport properties using temperature-dependent current-voltage and capacitance-voltage measurements. With this detailed characterization study, we aim at providing the framework to assess the potential of a material as a carrier selective contact and the understanding of how each of the aforementioned parameters on the metal oxide films influence the full solar cell operating performances.

  7. Liquid gallium ball/crystalline silicon polyhedrons/aligned silicon oxide nanowires sandwich structure: An interesting nanowire growth route

    NASA Astrophysics Data System (ADS)

    Pan, Zheng Wei; Dai, Sheng; Beach, David B.; Lowndes, Douglas H.

    2003-10-01

    We demonstrate the growth of silicon oxide nanowires through a sandwich-like configuration, i.e., Ga ball/Si polyhedrons/silicon oxide nanowires, by using Ga as the catalyst and SiO powder as the source material. The sandwich-like structures have a carrot-like morphology, consisting of three materials with different morphologies, states, and crystallographic structures. The "carrot" top is a liquid Ga ball with diameter of ˜10-30 μm; the middle part is a Si ring usually composed of about 10 μm-sized, clearly faceted, and crystalline Si polyhedrons that are arranged sequentially in a band around the lower hemisphere surface of the Ga ball; the bottom part is a carrot-shaped bunch of highly aligned silicon oxide nanowires that grow out from the downward facing facets of the Si polyhedrons. This study reveals several interesting nanowire growth phenomena that enrich the conventional vapor-liquid-solid nanowire growth mechanism.

  8. Crack healing behavior of hot pressed silicon nitride due to oxidation

    NASA Technical Reports Server (NTRS)

    Choi, S. R.; Tikare, V.

    1992-01-01

    It is shown that limited oxidation of an MgO-containing, hot-pressed silicon nitride ceramic at 800 deg C and above results in increased strength due to crack healing. Slight oxidation of the surface produces enstatite and cristobalite which fills in cracks. More extensive oxidation leads to strength degradation due to the formation of new flaws by the evolution of N2 gas at the surface. The apparent fracture toughness also increased at 800 deg C and above due to oxidation. Bonds formed between the two surfaces of the crack during oxidation leads to a reduction in stress intensity at the crack tip, suggesting that valid high-temperature toughness values cannot be obtained in an air environment. The increase in strength due to crack healing by oxidation can be achieved without compromising the fatigue properties of the silicon nitride ceramic.

  9. Optimization of contaminated oxide inversion layer solar cell. [considering silicon oxide coating

    NASA Technical Reports Server (NTRS)

    Call, R. L.

    1976-01-01

    Contaminated oxide cells have been fabricated with efficiencies of 8.6% with values of I sub sc = 120 ma, V sub oc = .54 volts, and curve factor of .73. Attempts to optimize the fabrication step to yield a higher output have not been successful. The fundamental limitation is the inadequate antireflection coating afforded by the silicon dioxide coating used to hold the contaminating ions. Coatings of SiO, therefore, were used to obtain a good antireflection coating, but the thinness of the coatings prevented a large concentration of the contaminating ions, and the cells was weak. Data of the best cell were .52 volts V sub oc, 110 ma I sub sc, .66 CFF and 6.7% efficiency.

  10. Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation

    SciTech Connect

    Lee, J.-G.; Nagase, T.; Yasuda, H.; Mori, H.

    2015-05-21

    The synthesis of metal silicide at the metal/silicon oxide interface by electronic excitation was investigated using transmission electron microscopy. A platinum silicide, α-Pt{sub 2}Si, was successfully formed at the platinum/silicon oxide interface under 25–200 keV electron irradiation. This is of interest since any platinum silicide was not formed at the platinum/silicon oxide interface by simple thermal annealing under no-electron-irradiation conditions. From the electron energy dependence of the cross section for the initiation of the silicide formation, it is clarified that the silicide formation under electron irradiation was not due to a knock-on atom-displacement process, but a process induced by electronic excitation. It is suggested that a mechanism related to the Knotek and Feibelman mechanism may play an important role in silicide formation within the solid. Similar silicide formation was also observed at the palladium/silicon oxide and nickel/silicon oxide interfaces, indicating a wide generality of the silicide formation by electronic excitation.

  11. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    NASA Astrophysics Data System (ADS)

    Duraia, El-Shazly M.; Mansurov, Z. A.; Tokmolden, S.; Beall, Gary W.

    2010-02-01

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  12. Graphene-Assisted Chemical Etching of Silicon Using Anodic Aluminum Oxides as Patterning Templates.

    PubMed

    Kim, Jungkil; Lee, Dae Hun; Kim, Ju Hwan; Choi, Suk-Ho

    2015-11-01

    We first report graphene-assisted chemical etching (GaCE) of silicon by using patterned graphene as an etching catalyst. Chemical-vapor-deposition-grown graphene transferred on a silicon substrate is patterned to a mesh with nanohole arrays by oxygen plasma etching using an anodic- aluminum-oxide etching mask. The prepared graphene mesh/silicon is immersed in a mixture solution of hydrofluoric acid and hydro peroxide with various molecular fractions at optimized temperatures. The silicon underneath graphene mesh is then selectively etched to form aligned nanopillar arrays. The morphology of the nanostructured silicon can be controlled to be smooth or porous depending on the etching conditions. The experimental results are systematically discussed based on possible mechanisms for GaCE of Si. PMID:26473800

  13. Solid-state synthesis of bismuth orthogermanate

    SciTech Connect

    Smirnov, V.I.; Yukhin, Yu.M.

    1994-12-01

    Earlier, three stable compounds, Bi{sub 2}Ge{sub 3}O{sub 9}, Bi{sub 4}Ge{sub 3}O{sub 20}, and metastable Bi{sub 2}GeO{sub 5} were reported to exist in the Bi{sub 2}O{sub 3}-GeO{sub 2} system. Owing to their various electrophysical properties, bismuth germanates find application as piezo- and ferro-electrics, luminophors, scintillators, and active media for laser. In particular, single crystals of bismuth orthogermanate Bi{sub 4}Ge{sub 3}O{sub 12} are used in ionizing-radiation detectors. In this work, solid-state synthesis of bismuth and germanium oxides was studied by thermal analysis and X-ray diffraction. Heating of starting oxide mixtures pretreated with a 25% ammonia solution yields finely dispersed germanium dioxide, which is partially converted form the starting, hexagonal form to the tetragonal one and exhibits a much higher reactivity in the solid-state sythesis of bismuth orthogermanate. As a result, the reaction of Bi{sub 2}O{sub 3} with germanium dioxide is completed below 1050-1100 K. Under these conditions, the effect of the Bi{sub 2}O{sub 3} particle size on the temperature and rate of formation of the final product is clearly manifested. When finely dispersed bismuth oxide is used and starting mixtures are pretreated with liquid ammonia, virtually single-phase bismuth orthogermanate suitable for crystal growth can be obtained in a single run by heating to 1150 K at a rate of 10K/min.

  14. Corrosion resistant three-dimensional nanotextured silicon for water photo-oxidation

    NASA Astrophysics Data System (ADS)

    Carter, Rachel; Chatterjee, Shahana; Gordon, Evan; Share, Keith; Erwin, William R.; Cohn, Adam P.; Bardhan, Rizia; Pint, Cary L.

    2015-10-01

    We demonstrate the ability to chemically transform bulk silicon into a nanotextured surface that exhibits excellent electrochemical stability in aqueous conditions for water photo-oxidation. Conformal defective graphene coatings on nanotextured silicon formed by thermal treatment enable over 50× corrosion resistance in aqueous electrolytes based upon Tafel analysis and impedance spectroscopy. This enables nanotextured silicon as an effective oxygen-evolution photoanode for water splitting with saturation current density measured near 35 mA cm-2 under 100 mW cm-2 (1 sun) illumination. Our approach builds upon simple and scalable processing techniques with silicon to develop corrosion resistant electrodes that can benefit a broad range of catalytic and photocatalytic applications.We demonstrate the ability to chemically transform bulk silicon into a nanotextured surface that exhibits excellent electrochemical stability in aqueous conditions for water photo-oxidation. Conformal defective graphene coatings on nanotextured silicon formed by thermal treatment enable over 50× corrosion resistance in aqueous electrolytes based upon Tafel analysis and impedance spectroscopy. This enables nanotextured silicon as an effective oxygen-evolution photoanode for water splitting with saturation current density measured near 35 mA cm-2 under 100 mW cm-2 (1 sun) illumination. Our approach builds upon simple and scalable processing techniques with silicon to develop corrosion resistant electrodes that can benefit a broad range of catalytic and photocatalytic applications. Electronic supplementary information (ESI) available: (i) Experimental details, (ii) Nyquist plot from EIS data, (iii) FTIR of H-terminated silicon, (iv) reflectance measurements to quantify light trapping in nanotextured silicon, (v) LSV from Tafel analysis, and (vi) J-V curves for H-terminated flat samples, (vii) stability test of photoanode, and (viii) forward and reverse scans for each sample type. See DOI: 10.1039/c5nr03897a

  15. Comparative analysis of oxidation methods of reaction-sintered silicon carbide for optimization of oxidation-assisted polishing.

    PubMed

    Shen, Xinmin; Dai, Yifan; Deng, Hui; Guan, Chaoliang; Yamamura, Kazuya

    2013-11-01

    Combination of the oxidation of reaction-sintered silicon carbide (RS-SiC) and the polishing of the oxide is an effective way of machining RS-SiC. In this study, anodic oxidation, thermal oxidation, and plasma oxidation were respectively conducted to obtain oxides on RS-SiC surfaces. By performing scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM-EDX) analysis and scanning white light interferometry (SWLI) measurement, the oxidation behavior of these oxidation methods was compared. Through ceria slurry polishing, the polishing properties of the oxides were evaluated. Analysis of the oxygen element on polished surfaces by SEM-EDX was conducted to evaluate the remaining oxide. By analyzing the three oxidation methods with corresponding polishing process on the basis of schematic diagrams, suitable application conditions for these methods were clarified. Anodic oxidation with simultaneous polishing is suitable for the rapid figuring of RS-SiC with a high material removal rate; polishing of a thermally oxidized surface is suitable for machining RS-SiC mirrors with complex shapes; combination of plasma oxidation and polishing is suitable for the fine finishing of RS-SiC with excellent surface roughness. These oxidation methods are expected to improve the machining of RS-SiC substrates and promote the application of RS-SiC products in the fields of optics, molds, and ceramics. PMID:24216836

  16. Dispersion engineering of high-Q silicon microresonators via thermal oxidation

    SciTech Connect

    Jiang, Wei C.; Zhang, Jidong; Usechak, Nicholas G.; Lin, Qiang

    2014-07-21

    We propose and demonstrate a convenient and sensitive technique for precise engineering of group-velocity dispersion in high-Q silicon microresonators. By accurately controlling the surface-oxidation thickness of silicon microdisk resonators, we are able to precisely manage the zero-dispersion wavelength, while simultaneously further improving the high optical quality of our devices, with the optical Q close to a million. The demonstrated dispersion management allows us to achieve parametric generation with precisely engineerable emission wavelengths, which shows great potential for application in integrated silicon nonlinear and quantum photonics.

  17. Silicon and silicon oxide etching rate enhancement by nitrogen containing gas addition in remote perfluorocarbon plasmas

    SciTech Connect

    Bai Bo; An Jujin; Sawin, Herbert H.

    2006-03-06

    The addition of 3% nitrogen to a mixture of perfluorocarbon/oxygen/argon in a remote toroidal plasma source was shown to double the etching rate of both silicon dioxide and silicon in a downstream process. It is believed that the nitrogen blocks the surface recombination sites for COF{sub 2} formation on the wall of the transfer tube, thereby transporting more fluorine atoms to the downstream process chamber and increasing the etching rate.

  18. The effect of nanocrystalline silicon host on magnetic properties of encapsulated iron oxide nanoparticles.

    PubMed

    Granitzer, P; Rumpf, K; Gonzalez-Rodriguez, R; Coffer, J L; Reissner, M

    2015-12-21

    The purpose of this work is a detailed comparison of the fundamental magnetic properties of nanocomposite systems consisting of Fe3O4 nanoparticle-loaded porous silicon as well as silicon nanotubes. Such composite structures are of potential merit in the area of magnetically guided drug delivery. For magnetic systems to be utilized in biomedical applications, there are certain magnetic properties that must be fulfilled. Therefore magnetic properties of embedded Fe3O4-nanoparticles in these nanostructured silicon host matrices, porous silicon and silicon nanotubes, are investigated. Temperature-dependent magnetic investigations have been carried out for four types of iron oxide particle sizes (4, 5, 8 and 10 nm). The silicon host, in interplay with the iron oxide nanoparticle size, plays a sensitive role. It is shown that Fe3O4 loaded porous silicon and SiNTs differ significantly in their magnetic behavior, especially the transition between superparamagnetic behavior and blocked state, due to host morphology-dependent magnetic interactions. Importantly, it is found that all investigated samples meet the magnetic precondition of possible biomedical applications of exhibiting a negligible magnetic remanence at room temperature. PMID:26575478

  19. Designing high performance precursors for atomic layer deposition of silicon oxide

    SciTech Connect

    Mallikarjunan, Anupama Chandra, Haripin; Xiao, Manchao; Lei, Xinjian; Pearlstein, Ronald M.; Bowen, Heather R.; O'Neill, Mark L.; Derecskei-Kovacs, Agnes; Han, Bing

    2015-01-15

    Conformal and continuous silicon oxide films produced by atomic layer deposition (ALD) are enabling novel processing schemes and integrated device structures. The increasing drive toward lower temperature processing requires new precursors with even higher reactivity. The aminosilane family of precursors has advantages due to their reactive nature and relative ease of use. In this paper, the authors present the experimental results that reveal the uniqueness of the monoaminosilane structure [(R{sub 2}N)SiH{sub 3}] in providing ultralow temperature silicon oxide depositions. Disubstituted aminosilanes with primary amines such as in bis(t-butylamino)silane and with secondary amines such as in bis(diethylamino)silane were compared with a representative monoaminosilane: di-sec-butylaminosilane (DSBAS). DSBAS showed the highest growth per cycle in both thermal and plasma enhanced ALD. These findings show the importance of the arrangement of the precursor's organic groups in an ALD silicon oxide process.

  20. Silicon Oxide Deposition into a Hole Using a Focused Ion Beam

    NASA Astrophysics Data System (ADS)

    Nakamura, Hiroko; Komano, Haruki; Norimatu, Kenji; Gomei, Yoshio

    1991-11-01

    Focused ion beam (FIB)-induced deposition of silicon oxide in terms of filling a hole is reported. It was found that a vacant space was formed when an ion beam was simply scanned through the hole area. To investigate the mechanism to form the vacancy, deposition on the sample, which has a step with a height of 0.8 μm, was carried out by using a Si2+ and a Be2+ ion beam. An extruded deposit resembling a pent roof was observed from the step ridge. The mechanism of the pent roof growth on the steplike sample was considered and the vacancy formation in the hole can be explained by the same mechanism. For silicon oxide, the high growth rate of the extruded deposit is thought to be the key to the vacancy formation. A useful way is proposed to fill the hole with silicon oxide with almost no vacancy.

  1. The apatite structure without an inversion center in a new bismuth calcium vanadium oxide: BiCa[sub 4]V[sub 3]O[sub 13

    SciTech Connect

    Huang, Jinfan; Sleight, A.W. )

    1993-05-01

    A new bismuth calcium vanadium oxide, BiCa[sub 4]V[sub 3]O[sub 13], with hexagonal symmetry has been synthesized: space group P6[sub 3] (No. 173), a = 9.819(2) [Angstrom], c = 7.033(2) [Angstrom], V = 587.2(3) [Angstrom][sup 3], and Z = 2. The structure was solved and refined from single crystal X-ray data leading to R = 0.055 and R[sub w] = 0.069 for 1076 unique reflections. Three different types of Ca sites were found: Ca(1) and Ca(2) coordinate to six O atoms, and Ca(3) coordinates to nine O atoms. There is no Bi site; instead, Bi partially occupies the Ca(1) and Ca(2) sites. The V atom is coordinated to four O atoms and forms a distorted tetrahedron with the V-O bond lengths ranging from 1.693(6) [Angstrom] to 1.72(1) [Angstrom] and O-V-O angles varying from 102.5(7)[degrees] to 114.7(6)[degrees]. The coordination polyhedra of Ca(1) and Ca(3) share faces forming chains along the c axis, and the coordination hexahedra of Ca(2) also form a chain along the c axis through sharing the corners among themselves. The VO[sub 4] tetrahedra connect the two types of chains forming a three dimensional structure. The BiCa[sub 4]V[sub 3]O[sub 13] formula may be written as A[sub 5](VO[sub 4])[sub 3]O to emphasize that this structure is essentially the same as the apatite structure, except that the inversion center is missing. Many compounds previously reported to have the apatite structure may actually have the lower symmetry version of this structure found in this study and thus be candidates for ferroelectricity. 15 refs., 4 figs., 4 tabs.

  2. Analyses of silicon dioxide, magnesium oxide, lead fluoride, bismuth as low-pass velocity filters for neutrons

    NASA Technical Reports Server (NTRS)

    Connor, D.; Holmryd, S.

    1969-01-01

    Transmission measurement of neutrons by filter materials for low energy neutrons is important for the study of structure and dynamics of condensed matter. Since only thermal neutrons are useful for such experiments, filter materials that transmit thermal neutrons while attenuating fast neutrons and gamma rays are of considerable interest.

  3. Liquid-phase epitaxial growth of bismuth silicon oxide single-crystal film: a new optically activated optical switch.

    PubMed

    Tada, K; Kuhara, Y; Tatsumi, M; Yamaguchi, T

    1982-08-15

    A single-crystalline double-layered structure of a pure (80-microm)/doped (39-microm)/pure Bi(12)SiO(20) (BSO) substrate was grown for the first time by a new liquid-phase epitaxial growth to form an optical waveguide. The waveguide layer is BSO doped with CaCO(3) (0.1 wt. %) and Ga(2)O(3) (0.197 wt. %) and has a refractive index 0.07% higher than the substrate. The optical absorption coefficients were decreased by more than 1 order of magnitude by doping with the elements Ca and Ga. The high-sensitive photoconductivity of pure BSO was also reduced. Using these unique properties, we have constructed a new type of optically controlled planar optical switch. PMID:20396155

  4. Microstructural and physical properties of magnesium oxide-doped silicon nitride ceramics

    NASA Astrophysics Data System (ADS)

    Sirota, V.; Lukianova, O.; Krasilnikov, V.; Selemenev, V.; Dokalov, V.

    Silicon nitride based ceramics with aluminum, yttrium and magnesium oxides were produced by cold isostatic pressing and free sintering. The phase composition of the starting MgO powder obtained by the novel technology has been studied. The effect of magnesium oxide content on the structure of the produced materials has been investigated. It was found, that obtained materials with 1 and 2 wt.% of magnesium oxide and without it have a typical β-silicon nitride structure with elongated grains. Ceramics with 5 wt.% magnesia has a duplex α/β-structure with elongated and equiaxed grains. Ceramics with 2 wt.% magnesium oxide has a maximum density of 2.91 g/cm3. The increases in magnesium oxide content upto 5% led to decrease in the shrinkage (from 16% to 12%) and density (from 2.88 to 2.37 g/cm3).

  5. The effect of oxidations on phosphorus-diffused crystalline-silicon substrates

    SciTech Connect

    Gee, J.M.; King, R.R.; Reiss, J.H.; Mitchell, K.W.; Narayanan, S.

    1997-08-01

    The authors examined the effect of oxidation on phosphorus-diffused crystalline-silicon p-type substrates. Oxidations subsequent to the phosphorus diffusion are of interest for passivating surfaces, and are commonly found in both high-efficiency laboratory-cell and commercial-cell fabrication sequences. The authors found a degradation of the bulk lifetime due to the oxidation in a variety of crystalline-silicon substrates that were diffused in various laboratories. The degradation was avoided if there was aluminum present on the back surface of the wafer during the oxidation. The study suggests that impurities gettered during the phosphorus diffusion can be released back into the bulk during a subsequent oxidation, and that the aluminum suppressed the bulk lifetime degradation by reabsorbing these released impurities.

  6. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.

    PubMed

    Jaehnike, Felix; Pham, Duy Vu; Anselmann, Ralf; Bock, Claudia; Kunze, Ulrich

    2015-07-01

    A silicon oxide gate dielectric was synthesized by a facile sol-gel reaction and applied to solution-processed indium oxide based thin-film transistors (TFTs). The SiOx sol-gel was spin-coated on highly doped silicon substrates and converted to a dense dielectric film with a smooth surface at a maximum processing temperature of T = 350 °C. The synthesis was systematically improved, so that the solution-processed silicon oxide finally achieved comparable break downfield strength (7 MV/cm) and leakage current densities (<10 nA/cm(2) at 1 MV/cm) to thermally grown silicon dioxide (SiO2). The good quality of the dielectric layer was successfully proven in bottom-gate, bottom-contact metal oxide TFTs and compared to reference TFTs with thermally grown SiO2. Both transistor types have field-effect mobility values as high as 28 cm(2)/(Vs) with an on/off current ratio of 10(8), subthreshold swings of 0.30 and 0.37 V/dec, respectively, and a threshold voltage close to zero. The good device performance could be attributed to the smooth dielectric/semiconductor interface and low interface trap density. Thus, the sol-gel-derived SiO2 is a promising candidate for a high-quality dielectric layer on many substrates and high-performance large-area applications. PMID:26039187

  7. Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon

    NASA Astrophysics Data System (ADS)

    Yoshida, Masayuki; Matsumoto, Satoru; Ishikawa, Yutaka

    1986-07-01

    Equations for oxidation enhanced and retarded diffusions (OED and ORD) and oxidation stacking faults (OSF) in silicon have been solved simultaneously, using experimental results at 1100°C for 1.0× 104--2.4× 105 s. A simple relation between the concentrations of self-interstitials and vacancies was assumed in order to obtain the solutions. It is concluded that the product of the concentrations of the self-interstitials and vacancies, CICV, is nearly equal to the value for thermal equilibrium, CI0CV0, and that the fractional components of the interstitialcy mechanism for self-, Sb and P diffusions are smaller than 0.5, smaller than 0.5 and larger than 0.5, respectively. This shows that the growth of OSF is caused mainly by the undersaturation of a vacancy, and that the ORD of Sb and the OED of P occur. The time dependences of the supersaturation ratios of the self-interstitials and vacancies were also obtained.

  8. Resistance of Silicon Nitride Turbine Components to Erosion and Hot Corrosion/oxidation Attack

    NASA Technical Reports Server (NTRS)

    Strangmen, Thomas E.; Fox, Dennis S.

    1994-01-01

    Silicon nitride turbine components are under intensive development by AlliedSignal to enable a new generation of higher power density auxiliary power systems. In order to be viable in the intended applications, silicon nitride turbine airfoils must be designed for survival in aggressive oxidizing combustion gas environments. Erosive and corrosive damage to ceramic airfoils from ingested sand and sea salt must be avoided. Recent engine test experience demonstrated that NT154 silicon nitride turbine vanes have exceptional resistance to sand erosion, relative to superalloys used in production engines. Similarly, NT154 silicon nitride has excellent resistance to oxidation in the temperature range of interest - up to 1400 C. Hot corrosion attack of superalloy gas turbine components is well documented. While hot corrosion from ingested sea salt will attack silicon nitride substantially less than the superalloys being replaced in initial engine applications, this degradation has the potential to limit component lives in advanced engine applications. Hot corrosion adversely affects the strength of silicon nitride in the 850 to 1300 C range. Since unacceptable reductions in strength must be rapidly identified and avoided, AlliedSignal and the NASA Lewis Research Center have pioneered the development of an environmental life prediction model for silicon nitride turbine components. Strength retention in flexure specimens following 1 to 3300 hour exposures to high temperature oxidation and hot corrosion has been measured and used to calibrate the life prediction model. Predicted component life is dependent upon engine design (stress, temperature, pressure, fuel/air ratio, gas velocity, and inlet air filtration), mission usage (fuel sulfur content, location (salt in air), and times at duty cycle power points), and material parameters. Preliminary analyses indicate that the hot corrosion resistance of NT154 silicon nitride is adequate for AlliedSignal's initial engine applications. Protective coatings and/or inlet air filtration may be required to achieve required ceramic component lives in more aggressive environments.

  9. Catalytically enhanced thermal decomposition of chemically grown silicon oxide layers on Si(001)

    NASA Astrophysics Data System (ADS)

    Leroy, F.; Passanante, T.; Cheynis, F.; Curiotto, S.; Bussmann, E. B.; Müller, P.

    2016-03-01

    The thermal decomposition of Si dioxide layers formed by wet chemical treatment on Si(001) has been studied by low-energy electron microscopy. Independent nucleations of voids occur into the Si oxide layers that open by reaction at the void periphery. Depending on the voids, the reaction rates exhibit large differences via the occurrence of a nonlinear growth of the void radius. This non-steady state regime is attributed to the accumulation of defects and silicon hydroxyl species at the SiO2/Si interface that enhances the silicon oxide decomposition at the void periphery.

  10. Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Ishigaki, Takashi; Tsuchiya, Ryuta; Morita, Yusuke; Sugii, Nobuyuki; Kimura, Shinichiro; Iwamatsu, Toshiaki; Oda, Hidekazu; Inoue, Yasuo

    2012-07-01

    We developed fully depleted silicon on thin buried oxide (SOTB) complementary metal oxide semiconductor field effect transistors (CMOSFETs) with a polycrystalline-silicon (poly-Si)/TiN/SiON gate stack. We investigated the flat-band voltage (Vfb) shift of the gate stack for the threshold voltage (Vth) symmetry of SOTB CMOSFETs. We found that the Vfb shift depended on both TiN thickness and thermal load. Thicker TiN above 15 nm is preferable for obtaining the midgap value of Vfb with considering the thermal budget of the SOTB process. We also integrated the gate stack into SOTB CMOSFETs, which showed that the Vth roll-off characteristics corresponded to the proper control of the effective work function by considering how the impurity-related work function modulation affects. Narrow channel characteristics of the TiN-gate SOTB CMOSFETs were also shown to be superior to fully silicided gate SOTB devices due to the less silicidation.

  11. Study of the properties of thin films of silicon nitride and silicon oxide using effective medium theories

    NASA Astrophysics Data System (ADS)

    Henda, Redhouane

    2002-07-01

    Effective medium theories (EMTs) find widespread applications in the general area of condensed matter. In this article, EMTs are used to investigate the properties of thin films of silicon nitride (SiNx) and silicon oxide (SiOx) produced by the low-pressure chemical vapor deposition technique. Experimental data on the technologically important properties, such as the optical constants and density, of these materials are compared with theoretical predictions using Clausius-Mossotti, Maxwell-Garnett, and Bruggemann equations. For both materials, the results show a good agreement between theoretical predictions as obtained from the solution of the Bruggemann equation and the experimental data up to the percolation threshold. The experimental results agree fairly well with the calculated results obtained through the solution of the Maxwell-Garnett equation, but the latter fails to predict the transition present in the composition versus optical constant curves of both materials. copyright 2002 American Vacuum Society.

  12. Plasma-Sprayed Refractory Oxide Coatings on Silicon-Base Ceramics

    NASA Technical Reports Server (NTRS)

    Tewari, Surendra

    1997-01-01

    Silicon-base ceramics are promising candidate materials for high temperature structural applications such as heat exchangers, gas turbines and advanced internal combustion engines. Composites based on these materials are leading candidates for combustor materials for HSCT gas turbine engines. These materials possess a combination of excellent physical and mechanical properties at high temperatures, for example, high strength, high toughness, high thermal shock resistance, high thermal conductivity, light weight and excellent oxidation resistance. However, environmental durability can be significantly reduced in certain conditions such as when molten salts, H2 or water vapor are present. The oxidation resistance of silicon-base materials is provided by SiO2 protective layer. Molten salt reacts with SiO2 and forms a mixture of SiO2 and liquid silicate at temperatures above 800C. Oxygen diffuses more easily through the chemically altered layer, resulting in a catastrophic degradation of the substrate. SiC and Si3N4 are not stable in pure H2 and decompose to silicon and gaseous species such as CH4, SiH, SiH4, N2, and NH3. Water vapor is known to slightly increase the oxidation rate of SiC and Si3N4. Refractory oxides such as alumina, yttria-stabilized zirconia, yttria and mullite (3Al2O3.2SiO2) possess excellent environmental durability in harsh conditions mentioned above. Therefore, refractory oxide coatings on silicon-base ceramics can substantially improve the environmental durability of these materials by acting as a chemical reaction barrier. These oxide coatings can also serve as a thermal barrier. The purpose of this research program has been to develop refractory oxide chemical/thermal barrier coatings on silicon-base ceramics to provide extended temperature range and lifetime to these materials in harsh environments.

  13. Role of an Oxidant Mixture as Surface Modifier of Porous Silicon Microstructures Evaluated by Spectroscopic Ellipsometry.

    PubMed

    Montiel-González, Zeuz; Escobar, Salvador; Nava, Rocío; Del Río, J Antonio; Tagüeña-Martínez, Julia

    2016-01-01

    Current research on porous silicon includes the construction of complex structures with luminescent and/or photonic properties. However, their preparation with both characteristics is still challenging. Recently, our group reported a possible method to achieve that by adding an oxidant mixture to the electrolyte used to produce porous silicon. This mixture can chemically modify their microstructure by changing the thickness and surface passivation of the pore walls. In this work, we prepared a series of samples (with and without oxidant mixture) and we evaluated the structural differences through their scanning electron micrographs and their optical properties determined by spectroscopic ellipsometry. The results showed that ellipsometry is sensitive to slight variations in the porous silicon structure, caused by changes in their preparation. The fitting process, based on models constructed from the features observed in the micrographs, allowed us to see that the mayor effect of the oxidant mixture is on samples of high porosity, where the surface oxidation strongly contributes to the skeleton thinning during the electrochemical etching. This suggests the existence of a porosity threshold for the action of the oxidant mixture. These results could have a significant impact on the design of complex porous silicon structures for different optoelectronic applications. PMID:27097767

  14. Role of an Oxidant Mixture as Surface Modifier of Porous Silicon Microstructures Evaluated by Spectroscopic Ellipsometry

    PubMed Central

    Montiel-González, Zeuz; Escobar, Salvador; Nava, Rocío; del Río, J. Antonio; Tagüeña-Martínez, Julia

    2016-01-01

    Current research on porous silicon includes the construction of complex structures with luminescent and/or photonic properties. However, their preparation with both characteristics is still challenging. Recently, our group reported a possible method to achieve that by adding an oxidant mixture to the electrolyte used to produce porous silicon. This mixture can chemically modify their microstructure by changing the thickness and surface passivation of the pore walls. In this work, we prepared a series of samples (with and without oxidant mixture) and we evaluated the structural differences through their scanning electron micrographs and their optical properties determined by spectroscopic ellipsometry. The results showed that ellipsometry is sensitive to slight variations in the porous silicon structure, caused by changes in their preparation. The fitting process, based on models constructed from the features observed in the micrographs, allowed us to see that the mayor effect of the oxidant mixture is on samples of high porosity, where the surface oxidation strongly contributes to the skeleton thinning during the electrochemical etching. This suggests the existence of a porosity threshold for the action of the oxidant mixture. These results could have a significant impact on the design of complex porous silicon structures for different optoelectronic applications. PMID:27097767

  15. Role of an Oxidant Mixture as Surface Modifier of Porous Silicon Microstructures Evaluated by Spectroscopic Ellipsometry

    NASA Astrophysics Data System (ADS)

    Montiel-González, Zeuz; Escobar, Salvador; Nava, Rocío; Del Río, J. Antonio; Tagüeña-Martínez, Julia

    2016-04-01

    Current research on porous silicon includes the construction of complex structures with luminescent and/or photonic properties. However, their preparation with both characteristics is still challenging. Recently, our group reported a possible method to achieve that by adding an oxidant mixture to the electrolyte used to produce porous silicon. This mixture can chemically modify their microstructure by changing the thickness and surface passivation of the pore walls. In this work, we prepared a series of samples (with and without oxidant mixture) and we evaluated the structural differences through their scanning electron micrographs and their optical properties determined by spectroscopic ellipsometry. The results showed that ellipsometry is sensitive to slight variations in the porous silicon structure, caused by changes in their preparation. The fitting process, based on models constructed from the features observed in the micrographs, allowed us to see that the mayor effect of the oxidant mixture is on samples of high porosity, where the surface oxidation strongly contributes to the skeleton thinning during the electrochemical etching. This suggests the existence of a porosity threshold for the action of the oxidant mixture. These results could have a significant impact on the design of complex porous silicon structures for different optoelectronic applications.

  16. Investigation of Low Temperature, Atomic-Layer-Deposited Oxides on 4Hydrigen-Silicon Carbide and their Effect on the Silicon Carbide/Silicon Dioxide Interface

    NASA Astrophysics Data System (ADS)

    Haney, Sarah Kay

    Silicon carbide has long been considered an excellent substrate for high power, high temperature applications. Fabrication of conventional MOSFETs on silicon carbide (SiC) relies on thermal oxidation of the SiC for formation of the silicon dioxide (SiO2) gate oxide. Historically, direct oxidation was viewed favorably due to ease of fabrication. However, the resulting MOS devices have exhibited significant interface trap densities, Dit , which reduce effective inversion layer mobility by capturing free carriers and enhancing scattering. While nitridation has been shown to reduce Dit, the inversion layer electron mobility of these devices is still limited by the presence of carbon near the interface. Studies have suggested a low mobility transition region between the SiC and SiO2, on the SiC side, attributed to increased carbon concentration resulting from the thermal oxidation of the SiC. In this work, we have investigated the low temperature, atomic layer deposition (ALD) of SiO2 onto SiC compared to thermal oxidation of SiC for the fabrication of MOS devices. Avoiding the carbon out diffusion and subsequent carbon build-up resulting from thermal oxidation is expected to result in a superior, higher mobility MOSFET. A three-step ALD process using 3-aminopropyltriethoxysiliane (3-APTES), ozone and water was evaluated on silicon and SiC substrates. Ellipsometry and XPS were used to characterize blanket films, and showed good results. Capacitors fabricated on SiC showed the need for optimized post deposition anneals. The effect of post oxidation anneals in nitrogen, forming gas and nitric oxide were examined. The standard nitric oxide (NO) anneal that is used to improve Dit after thermal oxidation was also shown to be the best anneal for the low temperature deposited ALD oxides. Materials characterization of the nitrided ALD and nitrided thermal oxide samples was completed using STEM/EELS techniques in addition to the ellipsometry and XPS. STEM/EELS analysis of the samples revealed no significant difference in transition regions on either side of the SiC/SiO2 interface regardless of oxidation technique or anneal temperature or ambient. All samples analyzed exhibited approximately 2-3nm of transition region on either side of the interface with no evidence of carbon or silicon rich regions. XPS was also used to determine a valence band offset of 2.43eV for the ALD oxide on 4H-SiC. Lateral MOSFETs were fabricated on 4H-SiC substrates with the following oxidation treatments: thermal oxidation at 1175°C, thermal oxidation at 1175°C followed by a nitric oxide (NO) anneal at 1175°C, and ALD of SiC at 150°C followed by an NO post oxidation anneal (POA) at 1175°C. ALD of the SiO2 was performed using 3-aminopropyltriethoxysiliane (3-APTES), ozone and water. Field effect mobility values were comparable for these samples, suggesting common thermal oxidation steps were still limiting the mobility. As such additional lateral MOSFETs were fabricated without the incoming sacrificial oxidation steps. This sacrificial-oxidation free experiment showed a 15% improvement in peak field effect mobility for the nitrided ALD oxide samples as compared to the nitrided thermal oxides. SIMS of the interfaces revealed nitrogen concentrations of ˜6E21 at/cc in the nitrided ALD sample compared to ˜4-6E20 in the nitrided thermal sample. This extremely high level of nitrogen incorporation, which is unparalleled in NO annealed thermal oxides, is accountable for the increase in field effect mobility. The low deposition temperature of the ALD oxide causes high levels of carbon incorporation and greater number of dangling bonds at the interface. Both the dangling bonds and excess carbon acts as binding sites for the nitrogen, increasing the nitrogen concentration and resulting in higher mobilities. Results presented support the use of SiO2 deposited using low temperature atomic layer deposition for improved gate oxides on 4H-SiC MOSFETs given the opportunity for increased nitrogen incorporation. The elevated levels of nitrogen measured in the NO annealed ALD SiO2 sample are unique and are directly attributed to the low temperature ALD process. As such, high peak field effect mobilities can repeatably be achieved with optimization of the nitrided ALD process.

  17. Bismuth as a modifier of Au Pd catalyst: Enhancing selectivity in alcohol oxidation by suppressing parallel reaction

    SciTech Connect

    Villa, Alberto; Wang, Di; Veith, Gabriel M; Prati, Laura

    2012-01-01

    Bi has been widely employed as a modifier for Pd and Pt based catalyst mainly in order to improve selectivity. We found that when Bi was added to the bimetallic system AuPd, the effect on activity in alcohol oxidation mainly depends on the amount of Bi regardless its position, being negligible when Bi was 0.1 wt% and detectably negative when the amount was increased to 3 wt%. However, the selectivity of the reactions notably varied only when Bi was deposited on the surface of metal nanoparticles suppressing parallel reaction in both benzyl alcohol and glycerol oxidation. After a careful characterization of all the catalysts and additional catalytic tests, we concluded that the Bi influence on the activity of the catalysts could be ascribed to electronic effect whereas the one on selectivity mainly to a geometric modification. Moreover, the Bi-modified AuPd/AC catalyst showed possible application in the production of tartronic acid, a useful intermediate, from glycerol.

  18. Antimony promoted bismuth cerium molybdate catalysts

    SciTech Connect

    Brazdil, J.F.; Glaeser, L.C.; Grasselli, R.K.

    1990-05-01

    This patent describes an improvement in antimony-promoted bismuth cerium molybdate whereby the tendency of the catalyst to lose efectiveness over time is significantly reduced. This patent describes new catalysts which are also useful in other oxidation-type reactions such as the oxidation of acrolein and methacrolein to produce the corresponding unsaturated aldehydes and acids and the oxydehydrogenation of various olefins such as isoamylenes to produce the corresponding diolefins such as isoprene.

  19. Gate oxide prepared by nanometre silicon wet oxidation at low temperature for Si/SiGe PMOSFET application

    NASA Astrophysics Data System (ADS)

    Yang, P. F.; Li, J. C.; Xie, M. X.; Yang, M. H.; He, L.; Li, K. C.; Tan, K. Z.; Zhang, J.

    2001-12-01

    A high-quality thin gate oxide for application in Si/SiGe heterostructure PMOSFETs is prepared by nanometre silicon wet oxidation at 750 °C by taking full advantage of the peculiar phase in polysilicon thermal oxidation. The combination of low temperature and a short processing time prevents strain relaxation and Ge outdiffusion in the compressively strained SiGe channel. Its structural stability and interface quality are studied by x-ray double-crystal diffraction. Results of C-V characteristics and breakdown measurements indicate that the gate oxide exhibits a low fixed oxide charge density and a high dielectric breakdown field. Employing this gate oxide, Si/SiGe PMOSFETs with good output characteristics have been successfully fabricated.

  20. Enhanced sinterability and conductivity of BaZr0.3Ce0.5Y0.2O3-δ by addition of bismuth oxide for proton conducting solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Gui, Liangqi; Ling, Yihan; Li, Geng; Wang, Zhihao; Wan, Yanhong; Wang, Ranran; He, Beibei; Zhao, Ling

    2016-01-01

    The effect of bismuth oxide addition on the sintering behavior and electrical properties of BaZr0.3Ce0.5Y0.2O3-δ (BZCY) as an electrolyte for proton conducting solid oxide fuel cells (H-SOFCs) is studied. The introduction of Bi2O3 is beneficial to improving sinterability of BZCY, resulting in high density. Meanwhile, the conductivity test indicates that BaZr0.3Ce0.5Y0.2O3-δ - 2 mol% Bi2O3 (BZCY-2) promises the highest conductivities. Further, single cells with BZCY-2 as the electrolyte are fabricated and evaluated. The cell with BZCY-2 presents excellent power densities, which reaches 0.67, 0.44, and 0.27 mW cm-2 at 700, 650, and 600 °C, respectively. The conductivities of BZCY-2 film are higher than BZCY in this work and other reported BZCY films. The encouraging results suggest that the addition of a small amount (2 mol%) of Bi2O3 to BZCY can significantly promote sinterability and electrical conductivity for H-SOFCs.

  1. Oxidation of Chemically-Vapor-Deposited Silicon Carbide in Carbon Dioxide

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Nguyen, QuynhGiao N.

    1998-01-01

    Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.

  2. Efficient oxidative hydrogen peroxide production and accumulation in photoelectrochemical water splitting using a tungsten trioxide/bismuth vanadate photoanode.

    PubMed

    Fuku, Kojiro; Sayama, Kazuhiro

    2016-04-01

    An aqueous solution of hydrogen carbonate (HCO3(-)) facilitated oxidative hydrogen peroxide (H2O2) production from water on a WO3/BiVO4 photoanode with the simultaneous production of hydrogen (H2) on a Pt cathode even at an applied voltage far lower than the theoretical electrolysis voltage (+1.77 V vs. RHE) under simulated solar light. The unprecedentedly efficient simultaneous production and accumulation of H2O2 and H2 was achieved in 2.0 M KHCO3 at low temperature, and the maximum selectivity, accumulated concentration and turnover number (TON) of H2O2 generated reached ca. 54%, more than 2 mM and 108, respectively. PMID:27009778

  3. Facile preparation of highly-dispersed cobalt-silicon mixed oxide nanosphere and its catalytic application in cyclohexane selective oxidation

    PubMed Central

    2011-01-01

    Highly dispersed cobalt-silicon mixed oxide [Co-SiO2] nanosphere was successfully prepared with a modified reverse-phase microemulsion method. This material was characterized in detail by X-ray diffraction, transmission electron microscopy, Fourier transform infrared, ultraviolet-visible diffuse reflectance spectra, X-ray absorption spectroscopy near-edge structure, and N2 adsorption-desorption measurements. High valence state cobalt could be easily obtained without calcination, which is fascinating for the catalytic application for its strong oxidation ability. In the selective oxidation of cyclohexane, Co-SiO2 acted as an efficient catalyst, and good activity could be obtained under mild conditions. PMID:22067075

  4. Configurational statistical model for the damaged structure of silicon oxide after ion implantation

    NASA Astrophysics Data System (ADS)

    Garrido, B.; Samitier, J.; Morante, J. R.; Montserrat, J.; Domínguez, C.

    1994-06-01

    A configurational model for silicon oxide damaged after a high-dose ion implantation of a nonreactive species is presented. Based on statistics of silicon-centered tetrahedra, the model takes into account not only the closest environment of a given silicon atom, but also the second neighborhood, so it is specified whether the oxygen attached to one given silicon is bridging two tetrahedra or not. The frequencies and intensities of infrared vibrational bands have been calculated by averaging over the distributions and these results are in agreement with the ones obtained from infrared experimental spectra. Likewise, the chemical shifts obtained from x-ray photoelectron spectroscopy (XPS) analysis are similar to the reported values for the charge-transfer model of SiOx compounds.

  5. Optical properties of bismuth-doped silica fibres in the temperature range 300 - 1500 K

    SciTech Connect

    Dvoretskii, D A; Bufetov, Igor' A; Vel'miskin, V V; Zlenko, Alexander S; Khopin, V F; Semjonov, S L; Guryanov, Aleksei N; Denisov, L K; Dianov, Evgenii M

    2012-09-30

    The visible and near-IR absorption and luminescence bands of bismuth-doped silica and germanosilicate fibres have been measured for the first time as a function of temperature. The temperature-dependent IR luminescence lifetime of a bismuth-related active centre associated with silicon in the germanosilicate fibre has been determined. The Bi{sup 3+} profile across the silica fibre preform is shown to differ markedly from the distribution of IR-emitting bismuth centres associated with silicon. The present results strongly suggest that the IR-emitting bismuth centre comprises a lowvalence bismuth ion and an oxygen-deficient glass network defect. (optical fibres, lasers and amplifiers. properties and applications)

  6. Heterojunction Solar Cells Based on Silicon and Composite Films of Graphene Oxide and Carbon Nanotubes.

    PubMed

    Yu, LePing; Tune, Daniel; Shearer, Cameron; Shapter, Joseph

    2015-09-01

    Graphene oxide (GO) sheets have been used as the surfactant to disperse single-walled carbon nanotubes (CNT) in water to prepare GO/CNT electrodes that are applied to silicon to form a heterojunction that can be used in solar cells. GO/CNT films with different ratios of the two components and with various thicknesses have been used as semitransparent electrodes, and the influence of both factors on the performance of the solar cell has been studied. The degradation rate of the GO/CNT-silicon devices under ambient conditions has also been explored. The influence of the film thickness on the device performance is related to the interplay of two competing factors, namely, sheet resistance and transmittance. CNTs help to improve the conductivity of the GO/CNT film, and GO is able to protect the silicon from oxidation in the atmosphere. PMID:25959241

  7. Nanopatterning of Crystalline Silicon Using Anodized Aluminum Oxide Templates for Photovoltaics

    NASA Astrophysics Data System (ADS)

    Chao, Tsu-An

    A novel thin film anodized aluminum oxide templating process was developed and applied to make nanopatterns on crystalline silicon to enhance the optical properties of silicon. The thin film anodized aluminum oxide was created to improve the conventional thick aluminum templating method with the aim for potential large scale fabrication. A unique two-step anodizing method was introduced to create high quality nanopatterns and it was demonstrated that this process is superior over the original one-step approach. Optical characterization of the nanopatterned silicon showed up to 10% reduction in reflection in the short wavelength range. Scanning electron microscopy was also used to analyze the nanopatterned surface structure and it was found that interpore spacing and pore density can be tuned by changing the anodizing potential.

  8. Silicon oxide nanowire growth mechanisms revealed by real-time electron microscopy

    NASA Astrophysics Data System (ADS)

    Kolíbal, Miroslav; Novák, Libor; Shanley, Toby; Toth, Milos; Šikola, Tomáš

    2015-12-01

    Growth of one-dimensional materials is possible through numerous mechanisms that affect the nanowire structure and morphology. Here, we explain why a wide range of morphologies is observed when silicon oxide nanowires are grown on silicon substrates using liquid gallium catalyst droplets. We show that a gallium oxide overlayer is needed for nanowire nucleation at typical growth temperatures, and that it can decompose during growth and, hence, dramatically alter the nanowire morphology. Gallium oxide decomposition is attributed to etching caused by hydrogen that can be supplied by thermal dissociation of H2O (a common impurity). We show that H2O dissociation is catalyzed by silicon substrates at temperatures as low as 320 °C, identify the material supply pathways and processes that rate-limit nanowire growth under dry and wet atmospheres, and present a detailed growth model that explains contradictory results reported in prior studies. We also show that under wet atmospheres the Ga droplets can be mobile and promote nanowire growth as they traverse the silicon substrate.Growth of one-dimensional materials is possible through numerous mechanisms that affect the nanowire structure and morphology. Here, we explain why a wide range of morphologies is observed when silicon oxide nanowires are grown on silicon substrates using liquid gallium catalyst droplets. We show that a gallium oxide overlayer is needed for nanowire nucleation at typical growth temperatures, and that it can decompose during growth and, hence, dramatically alter the nanowire morphology. Gallium oxide decomposition is attributed to etching caused by hydrogen that can be supplied by thermal dissociation of H2O (a common impurity). We show that H2O dissociation is catalyzed by silicon substrates at temperatures as low as 320 °C, identify the material supply pathways and processes that rate-limit nanowire growth under dry and wet atmospheres, and present a detailed growth model that explains contradictory results reported in prior studies. We also show that under wet atmospheres the Ga droplets can be mobile and promote nanowire growth as they traverse the silicon substrate. Electronic supplementary information (ESI) available: Additional nanowire analysis (Fig. S1-S4), real-time EDX analysis of the Si content in the Ga droplet (Fig. S5), image sequence S6 showing crack formation and further evolution of the catalyst droplet morphology, determination of the activation energy of NW formation (Fig. S7), and a demonstration of Ga droplet migration (Fig. S8). See DOI: 10.1039/c5nr05152e

  9. Zinc oxide nanowire arrays for silicon core/shell solar cells.

    PubMed

    Tamang, Asman; Pathirane, Minoli; Parsons, Rion; Schwarz, Miriam M; Iheanacho, Bright; Jovanov, Vladislav; Wagner, Veit; Wong, William S; Knipp, Dietmar

    2014-05-01

    The optics of core / shell nanowire solar cells was investigated. The optical wave propagation was studied by finite difference time domain simulations using realistic interface morphologies. The interface morphologies were determined by a 3D surface coverage algorithm, which provides a realistic film formation of amorphous silicon films on zinc oxide nanowire arrays. The influence of the nanowire dimensions on the interface morphology and light trapping was investigated and optimal dimensions of the zinc oxide nanowire were derived. PMID:24922370

  10. Improved reaction sintered silicon nitride. [protective coatings to improve oxidation resistance

    NASA Technical Reports Server (NTRS)

    Baumgartner, H. R.

    1978-01-01

    Processing treatments were applied to as-nitrided reaction sintered silicon nitride (RSSN) with the purposes of improving strength after processing to above 350 MN/m2 and improving strength after oxidation exposure. The experimental approaches are divided into three broad classifications: sintering of surface-applied powders; impregnation of solution followed by further thermal processing; and infiltration of molten silicon and subsequent carburization or nitridation of the silicon. The impregnation of RSSN with solutions of aluminum nitrate and zirconyl chloride, followed by heating at 1400-1500 C in a nitrogen atmosphere containing silicon monoxide, improved RSSN strength and oxidation resistance. The room temperature bend strength of RSSN was increased nearly fifty percent above the untreated strength with mean absolute strengths up to 420 MN/m2. Strengths of treated samples that were measured after a 12 hour oxidation exposure in air were up to 90 percent of the original as-nitrided strength, as compared to retained strengths in the range of 35 to 60 percent for untreated RSSN after the same oxidation exposure.

  11. Metal Oxide Silicon /MOS/ transistors protected from destructive damage by wire

    NASA Technical Reports Server (NTRS)

    Deboo, G. J.; Devine, E. J.

    1966-01-01

    Loop of flexible, small diameter, nickel wire protects metal oxide silicon /MOS/ transistors from a damaging electrostatic potential. The wire is attached to a music-wire spring, slipped over the MOS transistor case, and released so the spring tensions the wire loop around all the transistor leads, shorting them together. This allows handling without danger of damage.

  12. Scalable Preparation of Ternary Hierarchical Silicon Oxide-Nickel-Graphite Composites for Lithium-Ion Batteries.

    PubMed

    Wang, Jing; Bao, Wurigumula; Ma, Lu; Tan, Guoqiang; Su, Yuefeng; Chen, Shi; Wu, Feng; Lu, Jun; Amine, Khalil

    2015-12-01

    Silicon monoxide is a promising anode candidate because of its high theoretical capacity and good cycle performance. To solve the problems associated with this material, including large volume changes during charge-discharge processes, we report a ternary hierarchical silicon oxide-nickel-graphite composite prepared by a facile two-step ball-milling method. The composite consists of nano-Si dispersed silicon oxides embedded in nano-Ni/graphite matrices (Si@SiOx /Ni/graphite). In the composite, crystalline nano-Si particles are generated by the mechanochemical reduction of SiO by ball milling with Ni. These nano-Si dispersed oxides have abundant electrochemical activity and can provide high Li-ion storage capacity. Furthermore, the milled nano-Ni/graphite matrices stick well to active materials and interconnect to form a crosslinked framework, which functions as an electrical highway and a mechanical backbone so that all silicon oxide particles become electrochemically active. Owing to these advanced structural and electrochemical characteristics, the composite enhances the utilization efficiency of SiO, accommodates its large volume expansion upon cycling, and has good ionic and electronic conductivity. The composite electrodes thus exhibit substantial improvements in electrochemical performance. This ternary hierarchical Si@SiOx /Ni/graphite composite is a promising candidate anode material for high-energy lithium-ion batteries. Additionally, the mechanochemical ball-milling method is low cost and easy to reproduce, indicating potential for the commercial production of the composite materials. PMID:26548901

  13. Local etching of silicon using a solid mask from porous aluminum oxide

    SciTech Connect

    Belov, A. N.

    2008-12-15

    Technological features of nanoprofiling of silicon protected by a solid mask made of porous aluminum oxide are considered. It is shown that the method based on bombarding structures with accelerated neutral atoms (in particular, argon atoms) is efficient for etching through this mask.

  14. A Model for the Oxidation of Carbon Silicon Carbide Composite Structures

    NASA Technical Reports Server (NTRS)

    Sullivan, Roy M.

    2004-01-01

    A mathematical theory and an accompanying numerical scheme have been developed for predicting the oxidation behavior of carbon silicon carbide (C/SiC) composite structures. The theory is derived from the mechanics of the flow of ideal gases through a porous solid. The result of the theoretical formulation is a set of two coupled nonlinear differential equations written in terms of the oxidant and oxide partial pressures. The differential equations are solved simultaneously to obtain the partial vapor pressures of the oxidant and oxides as a function of the spatial location and time. The local rate of carbon oxidation is determined using the map of the local oxidant partial vapor pressure along with the Arrhenius rate equation. The nonlinear differential equations are cast into matrix equations by applying the Bubnov-Galerkin weighted residual method, allowing for the solution of the differential equations numerically. The numerical method is demonstrated by utilizing the method to model the carbon oxidation and weight loss behavior of C/SiC specimens during thermogravimetric experiments. The numerical method is used to study the physics of carbon oxidation in carbon silicon carbide composites.

  15. Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

    SciTech Connect

    Garcia, H.; Duenas, S.; Castan, H.; Gomez, A.; Bailon, L.; Toledano-Luque, M.; Prado, A. del; Martil, I.; Gonzalez-Diaz, G.

    2008-11-01

    Al/HfO{sub 2}/SiN{sub x}:H/n-Si metal-insulator-semiconductor capacitors have been studied by electrical characterization. Films of silicon nitride were directly grown on n-type silicon substrates by electron cyclotron resonance assisted chemical vapor deposition. Silicon nitride thickness was varied from 3 to 6.6 nm. Afterwards, 12 nm thick hafnium oxide films were deposited by the high-pressure sputtering approach. Interface quality was determined by using current-voltage, capacitance-voltage, deep-level transient spectroscopy (DLTS), conductance transients, and flatband voltage transient techniques. Leakage currents followed the Poole-Frenkel emission model in all cases. According to the simultaneous measurement of the high and low frequency capacitance voltage curves, the interface trap density obtained for all the samples is in the 10{sup 11} cm{sup -2} eV{sup -1} range. However, a significant increase in this density of about two orders of magnitude was obtained by DLTS for the thinnest silicon nitride interfacial layers. In this work we probe that this increase is an artifact that must be attributed to traps existing at the HfO{sub 2}/SiN{sub x}:H intralayer interface. These traps are more easily charged or discharged as this interface comes near to the substrate, that is, as thinner the SiN{sub x}:H interface layer is. The trapping/detrapping mechanism increases the capacitance transient and, in consequence, the DLTS measurements have contributions not only from the insulator/substrate interface but also from the HfO{sub 2}/SiN{sub x}:H intralayer interface.

  16. The effect of nanocrystalline silicon host on magnetic properties of encapsulated iron oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Granitzer, P.; Rumpf, K.; Gonzalez-Rodriguez, R.; Coffer, J. L.; Reissner, M.

    2015-11-01

    The purpose of this work is a detailed comparison of the fundamental magnetic properties of nanocomposite systems consisting of Fe3O4 nanoparticle-loaded porous silicon as well as silicon nanotubes. Such composite structures are of potential merit in the area of magnetically guided drug delivery. For magnetic systems to be utilized in biomedical applications, there are certain magnetic properties that must be fulfilled. Therefore magnetic properties of embedded Fe3O4-nanoparticles in these nanostructured silicon host matrices, porous silicon and silicon nanotubes, are investigated. Temperature-dependent magnetic investigations have been carried out for four types of iron oxide particle sizes (4, 5, 8 and 10 nm). The silicon host, in interplay with the iron oxide nanoparticle size, plays a sensitive role. It is shown that Fe3O4 loaded porous silicon and SiNTs differ significantly in their magnetic behavior, especially the transition between superparamagnetic behavior and blocked state, due to host morphology-dependent magnetic interactions. Importantly, it is found that all investigated samples meet the magnetic precondition of possible biomedical applications of exhibiting a negligible magnetic remanence at room temperature.The purpose of this work is a detailed comparison of the fundamental magnetic properties of nanocomposite systems consisting of Fe3O4 nanoparticle-loaded porous silicon as well as silicon nanotubes. Such composite structures are of potential merit in the area of magnetically guided drug delivery. For magnetic systems to be utilized in biomedical applications, there are certain magnetic properties that must be fulfilled. Therefore magnetic properties of embedded Fe3O4-nanoparticles in these nanostructured silicon host matrices, porous silicon and silicon nanotubes, are investigated. Temperature-dependent magnetic investigations have been carried out for four types of iron oxide particle sizes (4, 5, 8 and 10 nm). The silicon host, in interplay with the iron oxide nanoparticle size, plays a sensitive role. It is shown that Fe3O4 loaded porous silicon and SiNTs differ significantly in their magnetic behavior, especially the transition between superparamagnetic behavior and blocked state, due to host morphology-dependent magnetic interactions. Importantly, it is found that all investigated samples meet the magnetic precondition of possible biomedical applications of exhibiting a negligible magnetic remanence at room temperature. Electronic supplementary information (ESI) available: Energy dispersive X-ray spectra and corresponding EDX maps of pSi filled with Fe3O4-NPs of 8 nm and of 5 nm are shown. Furthermore the process for loading Fe3O4 NPs into Si NTs, consisting of: (a) physical detachment of SiNTs grown on a substrate and inversion of the NT film, followed by (b) dropwise addition of a solution of Fe3O4 NPs, facilitated by placing a Nd magnet underneath the film; (c) subsequent formation of the Fe3O4 NP-loaded SiNTs is depicted. The size dependent blocking temperatures of SiNTs of 10 nm wall thickness filled with Fe3O4 NPs are summarized in a table. TEM image and associated size distribution data for a commercial Fe3O4 NP sample (Aldrich) with stated average particle size of 10 nm is also shown. See DOI: 10.1039/c5nr05232g

  17. Magnetometer uses bismuth-selenide

    NASA Technical Reports Server (NTRS)

    Woollman, J. A.; Spain, I. L.; Beale, H.

    1972-01-01

    Characteristics of bismuth-selenide magnetometer are described. Advantages of bismuth-selenide magnetometer over standard magnetometers are stressed. Thermal stability of bismuth-selenide magnetometer is analyzed. Linearity of output versus magnetic field over wide range of temperatures is reported.

  18. Protein-repellent silicon nitride surfaces: UV-induced formation of oligoethylene oxide monolayers.

    PubMed

    Rosso, Michel; Nguyen, Ai T; de Jong, Ed; Baggerman, Jacob; Paulusse, Jos M J; Giesbers, Marcel; Fokkink, Remko G; Norde, Willem; Schroën, Karin; van Rijn, Cees J M; Zuilhof, Han

    2011-03-01

    The grafting of polymers and oligomers of ethylene oxide onto surfaces is widely used to prevent nonspecific adsorption of biological material on sensors and membrane surfaces. In this report, we show for the first time the robust covalent attachment of short oligoethylene oxide-terminated alkenes (CH(3)O(CH(2)CH(2)O)(3)(CH(2))(11)-(CH═CH(2)) [EO(3)] and CH(3)O(CH(2)CH(2)O)(6)(CH(2))(11)-(CH═CH(2)) [EO(6)]) from the reaction of alkenes onto silicon-rich silicon nitride surfaces at room temperature using UV light. Reflectometry is used to monitor in situ the nonspecific adsorption of bovine serum albumin (BSA) and fibrinogen (FIB) onto oligoethylene oxide coated silicon-rich silicon nitride surfaces (EO(n)-Si(x)N(4), x > 3) in comparison with plasma-oxidized silicon-rich silicon nitride surfaces (SiO(y)-Si(x)N(4)) and hexadecane-coated Si(x)N(4) surfaces (C(16)-Si(x)N(4)). A significant reduction in protein adsorption on EO(n)-Si(x)N(4) surfaces was achieved, adsorption onto EO(3)-Si(x)N(4) and EO(6)-Si(x)N(4) were 0.22 mg m(-2) and 0.08 mg m(-2), respectively. The performance of the obtained EO(3) and EO(6) layers is comparable to those of similar, highly protein-repellent monolayers formed on gold and silver surfaces. EO(6)-Si(x)N(4) surfaces prevented significantly the adsorption of BSA (0.08 mg m(-2)). Atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), X-ray reflectivity and static water contact angle measurements were employed to characterize the modified surfaces. In addition, the stability of EO(6)-Si(x)N(4) surfaces in phosphate-buffered saline solution (PBS) and alkaline condition (pH 10) was studied. Prolonged exposure of the surfaces to PBS solution for 1 week or alkaline condition for 2 h resulted in only minor degradation of the ethylene oxide moieties and no oxidation of the Si(x)N(4) substrates was observed. Highly stable antifouling coatings on Si(x)N(4) surfaces significantly broaden the application potential of silicon nitride-coated microdevices, and in particular of microfabricated filtration membranes. PMID:21309535

  19. Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.

    1994-01-01

    The oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales.

  20. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    NASA Astrophysics Data System (ADS)

    Menges, F.; Dittberner, M.; Novotny, L.; Passarello, D.; Parkin, S. S. P.; Spieser, M.; Riel, H.; Gotsmann, B.

    2016-04-01

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  1. Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

    NASA Astrophysics Data System (ADS)

    Dominique Krzeminski, Christophe

    2013-12-01

    Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge regarding the various atomistic mechanisms occurring during this fabrication step. In this article, some progress performed to adapt the reaction rate approach for the modelling of oxynitride growth by a nitrous ambient are reported. The Ellis and Buhrman's approach is used for the gas phase decomposition modelling. Taking into account the mass balance of the species at the interface between the oxynitride and silicon, a minimal kinetic model describing the oxide growth has been calibrated and implemented. The influence of nitrogen on the reaction rate has been introduced in an empirical way. The oxidation kinetics predicted with this minimal model compares well with several experiments.

  2. Photoluminescence Characteristics of Amorphous Silicon Nitride Nanoball Film Prevented from Oxidizing in Air

    NASA Astrophysics Data System (ADS)

    Funatsu, Tomoki; Kato, Isamu

    Hydrogenated amorphous silicon (a-Si:H) nanoball film emits photoluminescence only after being thermally oxidized, because the oxidized film is sufficiently transparent that excitation laser light can reach Si nanocrystal. We fabricated amorphous silicon nitride (a-SiNH) nanoball film by reacting N2 plasma and SiH4 gas. Without being thermally oxidized, this film was highly transparent and exhibited photoluminescence. The source of this photoluminescence is presumed to be either the quantum size effect of Si nanocrystal or electronic transitions in siloxane (Si-O-Si), which is present at the interface between Si nanocrystal and SiO2. By coating the a-SiNH nanoball film with SiN film, we fabricated a-SiNH nanoball film that was siloxane-free but that exhibited photoluminescence. Hence, we attribute the observed photoluminescence to the quantum size effect of Si nanocrystal.

  3. Crack healing in silicon nitride due to oxidation

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Tikare, Veena; Pawlik, Ralph

    1991-01-01

    The crack healing behavior of a commercial, MgO-containing, hot pressed Si3N4 was studied as a function of temperature in oxidizing and inert annealing environments. Crack healing occurred at a temperature 800 C or higher due to oxidation regardless of crack size, which ranged from 100 microns (indentation crack) to 1.7 mm (SEPB precrack). The resulting strength and apparent fracture toughness increased at crack healing temperature by 100 percent and 300 percent, respectively. The oxide layer present in the crack plane was found to be highly fatigue resistant, indicating that the oxide is not solely silicate glass, but a mixture of glass, enstatite, and/or cristobalite that was insensitive to fatigue in a room temperature water environment.

  4. Physical characterization of ultrathin anodic silicon oxide films

    NASA Astrophysics Data System (ADS)

    Clark, K. B.; Bardwell, J. A.; Baribeau, J.-M.

    1994-09-01

    Ultrathin oxides formed on p-type (100) Si using anodic oxidation in dilute aqueous NH4OH solution have been characterized by Fourier transform infrared spectroscopy (FITR), x-ray photoelectron spectroscopy (XPS), and x-ray reflectomery. The aim of the work was to optimize the growth and annealing conditions for fabrication of ultrathin gate oxides. Two alternate growth conditions (potentiostatic and galvanostatic) could be used to grow oxides of thickness between 3 and 16 nm. There was very little difference between the two types of oxides; however, the FTIR asymmetric stretch maximum nu(sub m) was at slightly higher frequencies and this band was slightly narrower for potentiostatic oxides compared to galvanostatic oxides of the same thickness. For both types of films, nu(sub m) increased with film thickness, while the corresponding full width at half-maximum decrease. As-grown approximately 11nm-thick films of both types contain 3.8 +/- 0.3% -OH (bound as isolated silanol) and 5.0 +/- 0.4% -OH (bound as H2O and/or associated silanol) by mass, and have a density of 2.05 +/- 0.03 g/cu cm compared with a density of 2.27 +/- 0.03 g/cu cm measured for thermal oxides. Thus, the composition of the as-grown anodic oxides can be written as SiO(1.93)(OH)(0.14)-0.18H2O. Discounting the H content, this converts to an O/Si ratio of 2.25 +/- 0.02, which can be compared to the O/Si ratio of 2.27 +/- 0.06 measured for as-grown films by XPS. Potentiostatically grown approximately 11-nm-thick films were annealed at temperatures between 300 and 900 C in forming gas. Two different stages were observed as a function of annela temperature. At temperatures below 500 C, water and/or associated silanol was ejected from the films. This resulted in a maximum in the stress and/or disorder in the oxides at anneal temperatures of 500 C. At temperatures above 500 C, the remainder of the silanol was removed from the films; some kind of stress relief occurred. The oxides became stoichiometric at temperatures 700 C and above.

  5. Destruction of monocrystalline silicon with nanosecond pulsed fiber laser accompanied by the oxidation of ablation microparticles

    NASA Astrophysics Data System (ADS)

    Veiko, V. P.; Skvortsov, A. M.; Huynh, C. T.; Petrov, A. A.

    2013-11-01

    In this work, we report an observation of process of local destruction monocrystalline silicon with a scanning beam irradiation of pulse ytterbium fiber laser with a wavelength λ= 1062 nm, accompanied by the oxidation of ablation microparticles. It is shown that depending on the power density of irradiation was observed a large scatter size of the microparticles. From a certain average power density is observed beginning oxidation particulate emitted from the surface of the irradiated area. By varying the parameters of the laser beam such as scanning speed, pulse repetition rate, overlap of laser spot, radiation dose can be achieved almost complete oxidation of all formed during the ablation of microparticles.

  6. The effect of oxide precipitates on minority carrier lifetime in n-type silicon

    NASA Astrophysics Data System (ADS)

    Murphy, J. D.; Al-Amin, M.; Bothe, K.; Olmo, M.; Voronkov, V. V.; Falster, R. J.

    2015-12-01

    Supersaturated levels of interstitial oxygen in Czochralski silicon can lead to the formation of oxide precipitates. Although beneficial from an internal gettering perspective, oxygen-related extended defects give rise to recombination which reduces minority carrier lifetime. The highest efficiency silicon solar cells are made from n-type substrates in which oxide precipitates can have a detrimental impact on cell efficiency. In order to quantify and to understand the mechanism of recombination in such materials, we correlate injection level-dependent minority carrier lifetime data measured with silicon nitride surface passivation with interstitial oxygen loss and precipitate concentration measurements in samples processed under substantially different conditions. We account for surface recombination, doping level, and precipitate morphology to present a generalised parameterisation of lifetime. The lifetime data are analysed in terms of recombination activity which is dependent on precipitate density or on the surface area of different morphologies of precipitates. Correlation of the lifetime data with interstitial oxygen loss data shows that the recombination activity is likely to be dependent on the precipitate surface area. We generalise our findings to estimate the impact of oxide precipitates with a given surface area on lifetime in both n-type and p-type silicon.

  7. Silicon oxide nanowire growth mechanisms revealed by real-time electron microscopy.

    PubMed

    Kolíbal, Miroslav; Novák, Libor; Shanley, Toby; Toth, Milos; Šikola, Tomáš

    2015-12-17

    Growth of one-dimensional materials is possible through numerous mechanisms that affect the nanowire structure and morphology. Here, we explain why a wide range of morphologies is observed when silicon oxide nanowires are grown on silicon substrates using liquid gallium catalyst droplets. We show that a gallium oxide overlayer is needed for nanowire nucleation at typical growth temperatures, and that it can decompose during growth and, hence, dramatically alter the nanowire morphology. Gallium oxide decomposition is attributed to etching caused by hydrogen that can be supplied by thermal dissociation of H2O (a common impurity). We show that H2O dissociation is catalyzed by silicon substrates at temperatures as low as 320 °C, identify the material supply pathways and processes that rate-limit nanowire growth under dry and wet atmospheres, and present a detailed growth model that explains contradictory results reported in prior studies. We also show that under wet atmospheres the Ga droplets can be mobile and promote nanowire growth as they traverse the silicon substrate. PMID:26608729

  8. Hydrothermal synthesis map of bismuth titanates

    SciTech Connect

    Sardar, Kripasindhu; Walton, Richard I.

    2012-05-15

    The hydrothermal synthesis of four bismuth titanate materials from common bismuth and titanium precursors under hydrothermal conditions is described. Reaction of NaBiO{sub 3}{center_dot}2H{sub 2}O and anatase TiO{sub 2} in concentrated NaOH solution at 240 Degree-Sign C is shown to produce perovskite and sillenite phases Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} and Bi{sub 12}TiO{sub 20}, depending on the ratio of metal precursors used. When KOH solution is used and a 1:1 ratio of the same precursors, a pyrochlore Bi{sub 1.43}Ti{sub 2}O{sub 6}(OH){sub 0.29}(H{sub 2}O){sub 0.66} is formed. The use of a mixture of HNO{sub 3} and NaOH is shown to facilitate the formation of the Aurivillius-type bismuth titanate Bi{sub 4}Ti{sub 3}O{sub 12}. The phases have been isolated separately as phase-pure powders and profile refinement of powder X-ray diffraction data allows comparisons with comparable materials reported in the literature. Analysis of Bi L{sub III}-edge X-ray absorption near edge structure (XANES) spectra of the materials shows the oxidation state of bismuth is +3 in all of the hydrothermally derived products. - Graphical abstract: Use of NaBiO{sub 3}{center_dot}2H{sub 2}O and TiO{sub 2} as reagents under hydrothermal conditions allows the phase-pure preparation of four crystalline bismuth titanate materials. Highlights: Black-Right-Pointing-Pointer NaBiO{sub 3} and TiO{sub 2} under hydrothermal conditions allow formation of bismuth titanates. Black-Right-Pointing-Pointer Synthesis of four distint phases has been mapped. Black-Right-Pointing-Pointer Bi LIII-edge XANES shows Bi is reduced to oxidation state +3 in all materials. Black-Right-Pointing-Pointer A new hydrated bismuth titanate pyrochlore has been isolated.

  9. Hydrothermal synthesis map of bismuth titanates

    NASA Astrophysics Data System (ADS)

    Sardar, Kripasindhu; Walton, Richard I.

    2012-05-01

    The hydrothermal synthesis of four bismuth titanate materials from common bismuth and titanium precursors under hydrothermal conditions is described. Reaction of NaBiO3·2H2O and anatase TiO2 in concentrated NaOH solution at 240 °C is shown to produce perovskite and sillenite phases Na0.5Bi0.5TiO3 and Bi12TiO20, depending on the ratio of metal precursors used. When KOH solution is used and a 1:1 ratio of the same precursors, a pyrochlore Bi1.43Ti2O6(OH)0.29(H2O)0.66 is formed. The use of a mixture of HNO3 and NaOH is shown to facilitate the formation of the Aurivillius-type bismuth titanate Bi4Ti3O12. The phases have been isolated separately as phase-pure powders and profile refinement of powder X-ray diffraction data allows comparisons with comparable materials reported in the literature. Analysis of Bi LIII-edge X-ray absorption near edge structure (XANES) spectra of the materials shows the oxidation state of bismuth is +3 in all of the hydrothermally derived products.

  10. Indentation and oxidation studies on silicon nitride joints

    SciTech Connect

    Gopal, M.; De Jonghe, L.C.; Thomas, G. |

    1996-05-01

    Si nitride ceramics have been joined with a Y oxide-SiO{sub 2} interlayer. A 1:2 molar ratio of Y{sub 2}O{sub 3} to SiO{sub 2} was chosen to obtain the desired Y{sub 2}Si{sub 2}O{sub 7} stoichiometry, which should give the interlayer better oxidation resistance compared to other interlayer materials. Mechanical characterization of the joints performed by indentation shows it to have good room temperature strength.

  11. The growth of microcrystalline silicon oxide thin films studied by in situ plasma diagnostics

    NASA Astrophysics Data System (ADS)

    Kirner, S.; Gabriel, O.; Stannowski, B.; Rech, B.; Schlatmann, R.

    2013-02-01

    The crystallinity and refractive index of microcrystalline silicon oxide (μc-SiOx:H) n-layers and their dependence on the pressure and radio frequency power during the deposition process is correlated with plasma properties derived from in situ diagnostics. From process gas depletion measurements, the oxygen content of the layers was calculated. High crystallinities were observed for increased pressures and decreased powers, indicating clear differences to trends previously shown for microcrystalline silicon (μc-Si:H) material, which are explained by the varying oxygen incorporation. Amorphous/microcrystalline silicon (a-Si:H/μc-Si:H) tandem solar cells with μc-SiOx:H intermediate reflector layers deposited at optimized pressures showed greatly improved series resistances.

  12. Exclusively Gas-Phase Passivation of Native Oxide-Free Silicon(100) and Silicon(111) Surfaces.

    PubMed

    Tao, Ye; Hauert, Roland; Degen, Christian L

    2016-05-25

    Reactions in the gas phase are of primary technological importance for applications in nano- and microfabrication technology and in the semiconductor industry. We present exclusively gas-phase protocols to chemically passivate oxide-free Si(111) and Si(100) surfaces with short-chain alkynes. The resulting surfaces showed equal or better oxidation resistance than most existing liquid-phase-derived surfaces and rivaled the outstanding stability of a full-coverage Si(111)-propenyl surface.1,2 The most stable surface (Si(111)-ethenyl) grew one-fifth of a monolayer of oxide (0.04 nm) after 1 month of air exposure. We monitored the regrowth of oxides on passivated Si(111) and Si(100) surfaces by X-ray photoelectron spectroscopy (XPS) and observed a significant crystal-orientation dependence of initial rates when total oxide thickness was below approximately one monolayer (0.2 nm). This difference was correlated with the desorption kinetics of residual surface Si-F bonds formed during HF treatment. We discuss applications of the technology and suggest future directions for process optimization. PMID:27153212

  13. Addition of silicon improves oxidation resistance of nickel based superalloys

    NASA Technical Reports Server (NTRS)

    Lowell, C. E.; Miner, R. V., Jr.

    1974-01-01

    Specific weight changes of nickel-base superalloy B-1900 and B-1900 + 1% Si specimens were tested at 1273 K. B-1900 was losing weight at an increasing rate due to spalling of oxide scale while B-1900 + 1% Si was still gaining weight at low, nearly constant rate. Similar comparison in weight change was observed for specimens tested at 1373 K.

  14. Metal and organic contamination effects on the characteristics of thin oxides thermally grown on silicon based wafers

    NASA Astrophysics Data System (ADS)

    Borionetti, G.; Geranzani, P.; Orizio, R.; Godio, P.; Bonoli, F.; Pagani, F.; Pello', C.

    2006-12-01

    The control of silicon dioxide properties in ULSI applications is important due to the trend in reducing the oxide thickness. The degree of residual contamination of silicon substrate can become a relevant component for the integrity and quality of thin and very thin oxides. This paper investigates the influence that metallic and organic contaminants can have on growth rate, dielectric strength and charges in thin and very thin oxides thermally grown on silicon wafers by various oxidation processes that led to oxide thickness values in the range of 3-30 nm. The effect of alkali metals (K, Ca, Na), fast diffusing metals (Ni, Cu) and caprolactam (as an example of organic contaminant) has been evaluated with a variety of techniques: ellipsometry for oxide thickness measurement, ICP-MS for determination of metal concentration in the oxide, gate oxide integrity, triangular voltage sweep and advanced Elymat technique. The paper provides a useful quantification of the relationship between alkali metal contamination and oxide growth rate, insights on the segregation of fast diffuser metals in silicon dioxide and their effect on oxide integrity, preliminary evaluation of organic contamination effect on oxide interface states and oxide integrity.

  15. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    NASA Astrophysics Data System (ADS)

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining high transparency and good passivation in Si-based solar cells. We have used a combination of complementary x-ray and electron spectroscopies to study the chemical and electronic structure of the (μc-SiOx:H) material system. With these techniques, we monitor the transition from a purely Si-based crystalline bonding network to a silicon oxide dominated environment, coinciding with a significant decrease of the material's conductivity. Most Si-based solar cell structures contain emitter/contact/passivation layers. Ideally, these layers fulfill their desired task (i.e., induce a sufficiently high internal electric field, ensure a good electric contact, and passivate the interfaces of the absorber) without absorbing light. Usually this leads to a trade-off in which a higher transparency can only be realized at the expense of the layer's ability to properly fulfill its task. One alternative approach is to use hydrogenated microcrystalline silicon oxide (μc-SiOx:H), a mixture of microcrystalline silicon and amorphous silicon (sub)oxide. The crystalline Si regions allow charge transport, while the oxide matrix maintains a high transparency. To date, it is still unclear how in detail the oxygen content influences the electronic structure of the μc-SiOx:H mixed phase material. To address this question, we have studied the chemical and electronic structure of the μc-SiOx:H (0 <= x = O/Si <=1) system with a combination of complementary x-ray and electron spectroscopies. The different surface sensitivities of the employed techniques help to reduce the impact of surface oxides on the spectral interpretation. For all samples, we find the valence band maximum to be located at a similar energy with respect to the Fermi energy. However, for x > 0.5, we observe a pronounced decrease of Si 3s - Si 3p hybridization in favor of Si 3p - O 2p hybridization in the upper valence band. This coincides with a significant increase of the material's resistivity, possibly indicating the breakdown of the conducting crystalline Si network. Silicon oxide layers with a thickness of several hundred nanometres were deposited in a PECVD (plasma-enhanced chemical vapor deposition) multi chamber system using an excitation frequency of 13.56 MHz with a plasma power density of 0.3 W/cm2. Glass (Corning type Eagle) and mono-crystalline silicon wafer substrates were coated in the same run at a substrate temperature of 185°C. The deposition pressure was 4 mbar and the substrate-electrode distance 20 mm. Mixtures of silane (SiH4), 1% TMB (B(CH3)3) diluted in helium, hydrogen (H2), and carbon dioxide (CO2) gases were used at flow rates of 1.25 - 0.18/0.32/500/0 - 1.07) sccm (standard cubic centimeters per minute) for the deposition of μc-SiOx:H(B) layers. By changing the CO2/SiH4 gas flow rate ratio from 0 to 6, μc-SiOx:H(B) layers with a composition of 0 <= x = O/Si <= 1 were prepared using a constant sum of SiH4 and CO2. The TMB flow and the H2 flow were kept constant within the series. For more details see Ref. [1]. The oxygen content in the films was determined using Rutherford Backscattering Spectroscopy (RBS). With RBS, the area-related atomic density of oxygen and silicon can be determined (+/- 2% [2]), and thus x can be calculated. This quantity considers only the number of silicon / oxygen atoms and not the number of atoms of other elements, such as hydrogen, which is also incorporated to a considerable extent: up to 20% in μc-SiOx:H (measured using the hydrogen effusion method). To avoid charging effects, the measurements were performed on films deposited on a substrate of mono-crystalline silicon wafers. The electrical conductivity was measured in the planar direction of the film in a vacuum cryostat, using voltages from - 100 V to + 100 V. For that two co-planar Ag contacts were evaporated on the film with a gap of 0.5 mm - 5 mm. In the present study, the optical band E04 is arbitrarily used as a measure for the optical band gap. E04 is defined by the photon energy E for which an optical absorption coefficient of α of 104cm-1 is obtained. The absorption coefficient α(λ) versus the wavelength λ of the films was determined by measuring the transmittance T(λ) and reflectance R(λ), using the Beer-Lambert law, as suggested by Ref. [3]. The film thickness d was measured using the step profiler close to the measurement spot of the spectrophotometer. It is important to measure the transmittance T(λ) and the reflectance R(λ) at the same spot on the sample, to avoid inaccuracies in the calculated absorption spectra that arise from non-uniformity of the film thickness and different positions of the reflectance and transmittance minima and maxima in the spectrum [4]. Hard X-ray photoelectron spectroscopy (HAXPES) experiments were conducted at the HiKE end-station [5] on the KMC-1 beamline [6] of the BESSY-II electron storage ring. This end-station is equipped with a Scienta R4000 electron energy analyzer capable of measuring photoelectron kinetic energies up to 10 keV. A pass energy of 200 eV was used for all measurements. Spectra were recorded with a photon energy of 2003 eV using the first and fourth order supplied by a Si(111) double crystal monochromator. The combined analyzer plus beamline resolution is approx. 0.25 eV for spectra taken at both photon energies. The top surface of the sample was electrically grounded for all measurements. The binding energy was calibrated by measuring the 4f spectrum of a grounded Au foil and setting the Au 4f7/2 binding energy equal to 84.00 eV. In SiO2, the inelastic mean free path of electrons was estimated to be approx. 5 and 13-16 nm for the core levels and valence band measurements performed with 2003 and 8012 eV [7].

  16. In situ silicon oxide based intermediate reflector for thin-film silicon micromorph solar cells

    NASA Astrophysics Data System (ADS)

    Buehlmann, P.; Bailat, J.; Dominé, D.; Billet, A.; Meillaud, F.; Feltrin, A.; Ballif, C.

    2007-10-01

    We show that SiO-based intermediate reflectors (SOIRs) can be fabricated in the same reactor and with the same process gases as used for thin-film silicon solar cells. By varying input gas ratios, SOIR layers with a wide range of optical and electrical properties are obtained. The influence of the SOIR thickness in the micromorph cell is studied and current gain and losses are discussed. Initial micromorph cell efficiency of 12.2% (Voc=1.40V, fill factor=71.9%, and Jsc=12.1mA/cm2) is achieved with top cell, SOIR, and bottom cell thicknesses of 270, 95, and 1800nm, respectively.

  17. Efficient processing of reaction-sintered silicon carbide by anodically oxidation-assisted polishing

    NASA Astrophysics Data System (ADS)

    Tu, Qunzhang; Shen, Xinmin; Zhou, Jianzhao; He, Xiaohui; Yamamura, Kazuya

    2015-10-01

    Reaction-sintered silicon carbide (RS-SiC) is a promising optical material for the space telescope systems. Anodically oxidation-assisted polishing is a method to machine RS-SiC. The electrolyte used in this study is a mixture of hydrogen peroxide (H2O2) and hydrochloric acid (HCl), and the oxidation potential has two modes: constant potential and high-frequency-square-wave potential. Oxide morphologies are compared by scanning electron microscope/energy dispersive x-ray spectroscopy and scanning white-light interferometer. The results indicate that anodic oxidation under constant potential can not only obtain a relatively smooth surface but also be propitious to obtain high material removal rate. The oxidation depth in anodic oxidation under constant potential is calculated by comparing surface morphologies before and after hydrofluoric acid etching. The theoretical oxidation rate is 5.3 nm/s based on the linear Deal-Grove model. Polishing of the oxidized RS-SiC is conducted to validate the machinability of the oxide layer. The obtained surface roughness root-mean-square is around 4.5 nm. Thus, anodically oxidation-assisted polishing can be considered as an efficient method, which can fill the performance gap between the rough figuring and fine finishing of RS-SiC. It can improve the machining quality of RS-SiC parts and promote the application of RS-SiC products.

  18. Bismuth, Metronidazole, and Tetracycline

    MedlinePlus

    ... taking this medication. Talk to your doctor about types of birth control that will work for you during and after your treatment with bismuth, metronidazole, and tetracycline.remember not to drink alcoholic beverages or take products with alcohol or propylene ...

  19. Silicon-oxide-assisted wear of a diamond-containing composite

    NASA Astrophysics Data System (ADS)

    Xiao, Huaping; Sinyukov, Alexander M.; He, Xingliang; Lin, Chih; Liang, Hong

    2013-12-01

    A composite containing diamond in silicon carbide substrate was studied for revealing wear mechanisms. Due to the low production cost, this material is being evaluated as an alternative economical solution in industry. Tribochemical examination was conducted using a pin-on-disk configuration in both aqueous and dry environments. Characterization was conducted on worn disks and wear debris. Phase transformation from diamond carbon (sp3) to graphite, tetrahedral carbon, or amorphous carbon (sp2) in friction was confirmed by Raman spectroscopy. In addition, the Raman peak of wear debris identified a shift from crystalline Si (521 cm-1) to the mixture of amorphous silicon and silicon oxide at 510 cm-1. The surface roughness of the diamond particles was found to be greatly reduced due to wear. The smoothening of the edges was due to polishing by silicon oxide as abrasives promoting removal of weaker sp2 bonded carbon. This research proposes a tribochemical wear mechanism of diamond that has significant benefits in the applications of automotive, aerospace, and energy industries.

  20. Novel Iron-oxide Catalyzed CNT Formation on Semiconductor Silicon Nanowire

    PubMed Central

    Adam, Tijjani; U, Hashim

    2014-01-01

    An aqueous ferric nitrate nonahydrate (Fe(NO3)3.9H2O) and magnesium oxide (MgO) were mixed and deposited on silicon nanowires (SiNWs), the carbon nanotubes (CNTs) formed by the concentration of Fe3O4/MgO catalysts with the mole ratio set at 0.15:9.85 and 600°C had diameter between 15.23 to 90nm with high-density distribution of CNT while those with the mole ratio set at 0.45:9.55 and 730°C had diameter of 100 to 230nm. The UV/Vis/NIR and FT-IR spectroscopes clearly confirmed the presence of the silicon-CNTs hybrid structure. UV/Vis/NIR, FT-IR spectra and FESEM images confirmed the silicon-CNT structure exists with diameters ranging between 15-230nm. Thus, the study demonstrated cost effective method of silicon-CNT composite nanowire formation via Iron-oxide Catalyze synthesis. PMID:25237290

  1. Kinetic study of the oxide-assisted catalyst-free synthesis of silicon nitride nanowires

    NASA Astrophysics Data System (ADS)

    Farjas, J.; Pinyol, A.; Rath, Chandana; Roura, P.; Bertran, E.

    2006-05-01

    The synthesis of Si3N4 nanowires from the reaction of silicon nanoparticles with N2 in the 1200-1440 °C temperature range is reported. The nitridation conditions are such that the reaction with nitrogen is favoured by the presence of silicon oxide in the particles and by the active oxidation of silicon without a catalyst. It is shown that the Si to Si3N4 conversion rate depends on the amount of silicon particles used in the experiments and that, in general, the reaction slows down for greater amounts. This trend is explained by particle stacking, which restricts the exchange of gases between the furnace atmosphere and the atmosphere around the inner particles. In a first stage, local oxygen partial pressure increases around the inner particles and inhibits nitridation locally. If the amount of reactant Si nanoparticles is small enough, this extrinsic effect is avoided and the intrinsic nitridation kinetics can be measured. Experiments show that intrinsic kinetics does not depend on temperature.

  2. Complete coverage of reduced graphene oxide on silicon dioxide substrates

    NASA Astrophysics Data System (ADS)

    Huang, Jingfeng; Melanie, Larisika; Chen, Hu; Steve, Faulkner; Myra, A. Nimmo; Christoph, Nowak; Alfred Tok Iing, Yoong

    2014-08-01

    Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost (oxide with ethanol, carbon islets are deposited preferentially at the edges of existing flakes. With a 2-h treatment, the standard deviation in electrical resistance of the treated chips can be reduced by 99.95%. Thus this process could enable RGO to be used in practical electronic devices.

  3. Sinterability, strength and oxidation of alpha silicon carbide powders

    NASA Technical Reports Server (NTRS)

    Dutta, S.

    1984-01-01

    An investigation is made of pressureless sintering of commercially available alpha-SiC powders at temperatures between 1900 and 2150 C for periods of 10 to 240 min under one atmosphere of argon pressure. It is found that alpha-SiC powder containing boron and carbon sintering aids is sinterable at 2150 C for a period of 30 min to a high final density (greater than 96 percent of theoretical). In alpha-SiC powder containing aluminum and carbon sintering aids, the final density achieved is only about 80 percent of theoretical. Determinations are made of room temperature and high temperature (1370 C) flexure strength and oxidation resistance on sintered high density (more than 96 percent of theoretical) alpha-SiC (boron, carbon) material. It is found that both the strength and the resistance to oxidation are equivalent and comparable to those of the sintered alpha-SiC which represents the state of the art.

  4. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOEpatents

    Sarin, Vinod K.

    1990-01-01

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al.sub.x N.sub.y O.sub.z layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al.sub.x N.sub.y O.sub.z layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  5. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOEpatents

    Sarin, V.K.

    1990-08-21

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications is disclosed. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al[sub x]N[sub y]O[sub z] layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al[sub x]N[sub y]O[sub z] layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  6. Dimensions of luminescent oxidized and porous silicon structures

    SciTech Connect

    Schuppler, S.; Friedman, S.L.; Marcus, M.A.; Adler, D.L.; Xie, Y.; Ross, F.M.; Harris, T.D.; Brown, W.L.; Chabal, Y.J.; Brus, L.E.; Citrin, P.H. National Center for Electron Microscopy, Lawrence Berkeley Laboratory, Berkeley, California 94720 )

    1994-04-18

    X-ray absorption measurements from H-passivated porous Si and from oxidized Si nanocrystals, combined with electron microscopy, ir absorption, [alpha] recoil, and luminescence emission data, provide a consistent structural picture of the species responsible for the visible luminescence observed in these samples. The mass-weighted average structures in por-Si are particles, not wires, with dimensions significantly smaller than previously reported or proposed.

  7. Production of Silicon Oxide like Thin Films by the Use of Atmospheric Plasma Torch

    NASA Astrophysics Data System (ADS)

    Ozono, E. M.; Fachini, E. R.; Silva, M. L. P.; Ruchko, L. F.; Galvão, R. M. O.

    2015-03-01

    The advantages of HMDS (hexamethyldisilazane) APT-plasma films for sensor applications were explored producing films in a three-turn copper coil APT equipment. HMDS was introduced into the argon plasma at four different conditions. Additional flux of oxygen could modulate the presence of organic components in the film, the composition varying from pure inorganic oxides to organo-silane polymers. Oxygen promoted deposition rates as high as 900 nm/min on silicon, acrylic or piezoelectric quartz crystal substrates. Films with a clustered morphology and refractive index of 1.45 were obtained, mainly due to a silicon oxide structure. Raman spectroscopy and XPS data showed the presence of CHn and amorphous carbon in the inorganic matrix. The films were sensitive to the humidity of the air. The adsorptive capabilities of outstanding films were tested in a Quartz Crystal Microbalance (QCM). The results support that those films can be a useful and simple alternative for the development of sensors.

  8. Immobilization of pneumococcal polysaccharide vaccine on silicon oxide wafer for an acoustical biosensor.

    PubMed

    Dutra, R F; Castro, C M; Azevedo, C R; Vinhas, E; Malagueo, E; Melo, E H; Lima Filho, J L; Kennedy, J F

    2000-01-01

    One the most important aspects of a biosensor is related to immobilization and maintenance of specific reference compounds on sensing surfaces. A method for the immobilization of polysaccharides to a silicon oxide surface intended for Surface Acoustical Waves (SAW) sensors is described. Silicon oxide is a hydrophobic inorganic support used for the fabrication of many electronic devices. The pneumococcal polysaccharide (PPS) vaccine is immobilized via Protein A after pre-treatment of the surface with hydrochloric acid. The effects of non-specific binding are discussed. The results indicate that the immobilization of PPS via Protein A increases the sensitivity of detecting Streptococcus pneumoniae antibodies in human sera and offers greater reproducibility of response compared with ELISA methods. The principles of this technique are simple and are applicable to the immobilization of many capsular polysaccharides. PMID:11419647

  9. Tunable nanoporous silicon oxide templates by swift heavy ion tracks technology.

    PubMed

    Kaniukov, E Yu; Ustarroz, J; Yakimchuk, D V; Petrova, M; Terryn, H; Sivakov, V; Petrov, A V

    2016-03-18

    Nanoporous silicon oxide templates formed by swift heavy ion tracks technology have been investigated. The influence of the heavy ion characteristics, such as type of ion, energy, stopping power and irradiation fluence on the pore properties of the silicon oxide templates, has been studied. Furthermore, the process of pore formation by chemical etching with hydrofluoric acid has been thoroughly investigated by assessing the effect of etchant concentration and etching time. The outcome of this investigation enables us to have precise control over the resulting geometry of nanopores arrays. As a result, guidelines for the creation of a-SiO2/Si templates with tunable parameters and general recommendations for their further application are presented. PMID:26878691

  10. Tunable nanoporous silicon oxide templates by swift heavy ion tracks technology

    NASA Astrophysics Data System (ADS)

    Kaniukov, E. Yu; Ustarroz, J.; Yakimchuk, D. V.; Petrova, M.; Terryn, H.; Sivakov, V.; Petrov, A. V.

    2016-03-01

    Nanoporous silicon oxide templates formed by swift heavy ion tracks technology have been investigated. The influence of the heavy ion characteristics, such as type of ion, energy, stopping power and irradiation fluence on the pore properties of the silicon oxide templates, has been studied. Furthermore, the process of pore formation by chemical etching with hydrofluoric acid has been thoroughly investigated by assessing the effect of etchant concentration and etching time. The outcome of this investigation enables us to have precise control over the resulting geometry of nanopores arrays. As a result, guidelines for the creation of a-SiO2/Si templates with tunable parameters and general recommendations for their further application are presented.

  11. Effect of Alcohol-Assisted Annealing on the Quality of Silicon Oxide Thin Film

    NASA Astrophysics Data System (ADS)

    Ito, Takuya; Ota, Yasuyuki; Shiomori, Koichiro; Nishioka, Kensuke

    2014-07-01

    Silicon oxide thin films have been formed by use of the reaction between spin-coated silicone oil and ozone gas at atmospheric pressure and low temperature (250°C). Films formed at this temperature contained Si-OH bonds, owing to inadequate dehydration. To remove the Si-OH bonds at low temperature, the sample was dipped in ethanol at room temperature for 15 min then annealed on a hot plate at 250°C in methanol gas for 30 min. This treatment effectively dissociated the Si-OH bonds. It is believed the Si-OH bonds are replaced by Si-OCH3 bonds during the alcohol-assisted annealing. The leakage current of the metal-oxide-semiconductor after alcohol-assisted annealing was improved and the hysteresis width was reduced. This indicated that the number of trap sites owing to Si-OH bonds was reduced.

  12. Quantum Conductance in Silicon Oxide Resistive Memory Devices

    PubMed Central

    Mehonic, A.; Vrajitoarea, A.; Cueff, S.; Hudziak, S.; Howe, H.; Labbé, C.; Rizk, R.; Pepper, M.; Kenyon, A. J.

    2013-01-01

    Resistive switching offers a promising route to universal electronic memory, potentially replacing current technologies that are approaching their fundamental limits. In many cases switching originates from the reversible formation and dissolution of nanometre-scale conductive filaments, which constrain the motion of electrons, leading to the quantisation of device conductance into multiples of the fundamental unit of conductance, G0. Such quantum effects appear when the constriction diameter approaches the Fermi wavelength of the electron in the medium – typically several nanometres. Here we find that the conductance of silicon-rich silica (SiOx) resistive switches is quantised in half-integer multiples of G0. In contrast to other resistive switching systems this quantisation is intrinsic to SiOx, and is not due to drift of metallic ions. Half-integer quantisation is explained in terms of the filament structure and formation mechanism, which allows us to distinguish between systems that exhibit integer and half-integer quantisation. PMID:24048282

  13. High-temperature oxidation studies of several silicon-based systems

    NASA Astrophysics Data System (ADS)

    Ramberg, Charles Eric

    1997-10-01

    A mixed control oxidation model was used in Chapter 1 to reevaluate historical assumptions regarding diffusion controlled oxidation. Rather than assuming thermodynamic equilibrium at the scale/substrate interface (a fast chemical reaction), a mixed control model allows finite rates for both the diffusion process and the chemical reaction, which occur in series. This coupling of the two mechanisms by the interfacial oxygen concentration can result in kinetics that appear completely parabolic. However, the interfacial oxygen concentration may never reach the equilibrium thermodynamic value, and may in fact remain at a significant percentage of the atmospheric value, despite the apparently parabolic kinetics. In Chapter 2, siliconized silicon carbide samples were oxidized in high purity oxygen from 1250 to 1600spC. The parabolic rate constants for the siliconized SiC at temperatures below 1400spC agreed well with literature values for CVD-SiC and single crystal SiC. At higher temperatures, the parabolic rate constants and activation energy for siliconized SiC oxidation increased. However, the parabolic rate constants obtained in this study for oxidation of CVD-SiC at 1500 and 1600 C were consistent with a single activation energy extrapolated from lower temperature rate constants obtained in prior studies. In Chapter 3, dense, homogeneous samples in the Mo-Al-Si system were fabricated using a combination of self propagating synthesis (SPS) and hot pressing. Materials in the Mosb3Alsb8-MoSisb2 pseudobinary had a strong tendency to form alumina (Alsb2Osb3) scales. During oxidation at 600 C for 50 days, arc melted Mosb3Alsb8 was extremely oxidation resistant-forming a 170 nm thick oxide scale. Increasing the silicon content reduced the oxidation resistance at this temperature for arc-melted samples. At higher temperatures, compositions in the Mosb3Alsb8-MoSisb2 pseudobinary with silicon to aluminum ratios greater than 2:1 formed scales containing both silica and alumina. The oxidation kinetics as a function of temperature were determined for hot pressed Mo(Alsb{0.1}Sisb{0.9})sb2 and Mo(Alsb{0.01}Sisb{0.99})sb2. The hot-pressed Mo(Alsb{0.1}Sisb{0.9})sb2 materials formed alumina scales at low temperatures (1200 C), and oxide scales composed of alumina (Alsb2Osb3) and mullite (3Alsb2Osb3sp\\*2SiOsb2) at higher temperatures (>1300 C). Hot pressed Mo(Alsb{0.01}Sisb{0.99})sb2 materials formed scales consisting of cristobalite (SiOsb2) and mullite. At 1500 C, the oxidation kinetics were extremely nonlinear, presumably due to the formation of a continuous mullite layer at the scale/substrate interface after 20 hours.

  14. Window layer with p doped silicon oxide for high Voc thin-film silicon n-i-p solar cells

    NASA Astrophysics Data System (ADS)

    Biron, Rémi; Pahud, Celine; Haug, Franz-Josef; Escarré, Jordi; Söderström, Karin; Ballif, Christophe

    2011-12-01

    We investigate the influence of the oxygen content in boron-doped nanocrystalline silicon oxide films (p-nc-SiOx) and introduce this material as window layer in n-i-p solar cells. The dependence of both, optical and electrical properties on the oxygen content is consistent with a bi-phase model which describes the p-nc-SiOx material as a mixture of an oxygen-rich (O-rich) phase and a silicon-rich (Si-rich) phase. We observe that increasing the oxygen content enhances the optical gap E04 while deteriorating the activation energy and the planar conductivity. These trends are ascribed to a higher volume fraction of the O-rich phase. Incorporated into n-i-p a-Si:H cells, p-nc-SiOx layers with moderate oxygen content yield open circuit voltage (Voc) up to 945 mV, which corresponds to a relative gain of 11% compared to an oxygen-free p-layer. As a similar gain is obtained on planar and on textured substrates, we attribute the increase in Voc to the higher work function of the p-nc-SiOx layer made possible by its wider band gap. These results are attained without changing the dilution ratio of the 250 nm thick intrinsic layer. We also observe an enhancement of 0.6 mA cm-2 in short circuit current density in the short wavelengths due to the higher transparency of the p-nc-SiOx layer. Finally, an initial efficiency of 9.9% for a single junction 250 nm a-Si:H n-i-p solar cell on plastic foil is achieved with the optimization of the p layer thickness, the doping ratio of the front transparent conductive oxide, and the optical properties of the back reflector.

  15. Electron-irradiation-induced crystallization at metallic amorphous/silicon oxide interfaces caused by electronic excitation

    NASA Astrophysics Data System (ADS)

    Nagase, Takeshi; Yamashita, Ryo; Lee, Jung-Goo

    2016-04-01

    Irradiation-induced crystallization of an amorphous phase was stimulated at a Pd-Si amorphous/silicon oxide (a(Pd-Si)/SiOx) interface at 298 K by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Under irradiation, a Pd-Si amorphous phase was initially formed at the crystalline face-centered cubic palladium/silicon oxide (Pd/SiOx) interface, followed by the formation of a Pd2Si intermetallic compound through irradiation-induced crystallization. The irradiation-induced crystallization can be considered to be stimulated not by defect introduction through the electron knock-on effects and electron-beam heating, but by the electronic excitation mechanism. The observed irradiation-induced structural change at the a(Pd-Si)/SiOx and Pd/SiOx interfaces indicates multiple structural modifications at the metal/silicon oxide interfaces through electronic excitation induced by the electron-beam processes.

  16. Optical waveguides in oxygen-implanted buried-oxide silicon-on-insulator structures

    NASA Technical Reports Server (NTRS)

    Kurdi, B. N.; Hall, D. G.

    1988-01-01

    An analysis is made of the waveguiding properties of the oxygen-implanted, buried-oxide, silicon-on-insulator structures currently being developed for use in microelectronics. It is found that in spite of the fact that the buried-oxide layer is only a few tenths of a micrometer thick, the single-crystal overlayer can support TEo guided-wave propagation, at subbandgap wavelengths, with losses due to substrate radiation leakage at or below the benchmark level of 1 dB/cm.

  17. Effect of carbon and boron on the high-temperature oxidation of silicon carbide

    SciTech Connect

    Fergus, J.W.; Worrel, W.L.

    1995-07-01

    Silicon carbide has good oxidation resistance, due to the formation of a protective silica layer. Although amorphous silica is an excellent oxygen barrier, it is very sensitive to impurity elements, which affect its viscosity, oxygen diffusivity,a nd crystallization kinetics. This paper compares the oxidation rates of CVD SiC, sintered {alpha}-SiC, and CVD SiC-coated graphite in 1 atm oxygen at 1,500 C to determine the effects of small additions of boron and carbon. the formation of bubbles in the silica scale formed on sintered {alpha}-Sic in oxygen between 1,230 and 1,550 C is also discussed.

  18. Comparison of beryllium oxide and pyrolytic graphite crucibles for boron doped silicon epitaxy

    SciTech Connect

    Ali, Dyan; Richardson, Christopher J. K.

    2012-11-15

    This article reports on the comparison of beryllium oxide and pyrolytic graphite as crucible liners in a high-temperature effusion cell used for boron doping in silicon grown by molecular beam epitaxy. Secondary ion mass spectroscopy analysis indicates decomposition of the beryllium oxide liner, leading to significant incorporation of beryllium and oxygen in the grown films. The resulting films are of poor crystal quality with rough surfaces and broad x-ray diffraction peaks. Alternatively, the use of pyrolytic graphite crucible liners results in higher quality films.

  19. Patterns of discoloration and oxidation by direct and scattered fluxes, especially oxygen on silicon

    NASA Technical Reports Server (NTRS)

    Frederickson, A. R.; Filz, R. C.; Rich, F. J.; Sagalyn, Paul L.

    1991-01-01

    A number of interesting discoloration patterns are clearly evident on M0002-1 which resides on three faces of LDEF: front face, rear face, and earth face. Most interesting is the pattern of blue oxidation on polished single crystal silicon apparently produced by once-scattered ram oxygen atoms along the earth face. Most of the other patterns are seen in the Thermal Control Paint. Also, severe oxidation of CR-39 polycarbonate occurred on the front face of LDEF, as expected. A complete explanation for the patterns has not yet been obtained.

  20. Effect of ion-plated films of germanium and silicon on friction, wear, and oxidation of 52100 bearing steel

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.; Spalvins, T.

    1977-01-01

    Friction and wear experiments were conducted with ion plated films of germanium and silicon on the surface of 52100 bearing steel both dry and in the presence of mineral oil. Both silicon and germanium were found to reduce wear, with germanium being more effective than silicon. An optimum film thickness of germanium for minimum wear without surface crack formation was found to be approximately 400 nanometers (4000 A). The presence of silicon and germanium on the 52100 bearing steel surface improved resistance to oxidation.

  1. Mechanisms for generation of oxide trapped charges in ultrathin silicon dioxide films during electrical stress

    NASA Astrophysics Data System (ADS)

    Samanta, Piyas

    2008-02-01

    Charge trapping characteristics of ultrathin silicon dioxide (SiO2) films during constant voltage stress (CVS) in direct tunneling regime have been presented. Both bulk and border traps have been segregated from oxide trapped charges. Our measurement results indicate that electron trapping in as fabricated traps in ultrathin samples was suppressed and/or absent during prolonged stress. In addition, the generation kinetics of "border" and "bulk" trapped positive oxide charges have been studied. From the bulk oxide charge relaxation experiments, nature of as-fabricated intrinsic hole traps in SiO2 has been determined. Our results show that both bulk and border trapped positive oxide charges are mostly contributed by proton related species possibly the [Si2dbnd OH]+ centers. Based on experimental observations, a physical model of stress-induced bulk positive charge generation/trapping has been proposed.

  2. Identification and Control of Gravity Related Defect Formation During Melt Growth of Bismuth-Silicate (Bi12SiO20)

    NASA Technical Reports Server (NTRS)

    Zheng, Y.; Witt, A. F.

    1999-01-01

    In the light of strong indications that a majority of critical defects formed in bismuth silicon oxide (BSO) during growth from the melt is related directly or indirectly to gravitational interference, it is suggested to use the reduced gravity environment of outer space for experimentation directed at the identification and control of these defects. The results of these experiments are expected to lead to advances in our understanding of crystal growth related defect formation in general and will establish a basis for effective defect engineering, the approach to efficient achievement of defect related, application specific properties in opto-electronic materials

  3. Interface studies of tungsten gate metal-oxide-silicon capacitors

    NASA Astrophysics Data System (ADS)

    Shang, Huiling; White, Marvin H.; Guarini, Kathryn W.; Solomon, Paul; Cartier, Eduard; McFeely, Fenton R.; Yurkas, John J.; Lee, Wen-Chin

    2001-05-01

    The Si/SiO2 interface in 100-nm-thick chemical vapor deposition (CVD) tungsten gate metal-oxide-semiconductor (MOS) structures exhibits high interface state densities (Dit0>51011/cm2 eV) after conventional forming gas anneals over varying temperatures and times. In this letter, we show this is a consequence of the low diffusivity and solubility of molecular hydrogen in tungsten and the high temperature CVD process. We have discovered that atomic hydrogen is more effective in passivating tungsten gate MOS interfaces because of its higher diffusivity in tungsten. Atomic hydrogen can be produced (1) by the reaction of aluminum with water vapor when aluminum is evaporated on the top of tungsten, (2) by hydrogen implantation, and (3) by hydrogen plasma. These techniques can passivate the Si/SiO2 interface effectively in MOS structures (Dit0<51010/cm2 eV) with 100-nm thick CVD tungsten gates.

  4. Structural silicon nitride materials containing rare earth oxides

    DOEpatents

    Andersson, Clarence A.

    1980-01-01

    A ceramic composition suitable for use as a high-temperature structural material, particularly for use in apparatus exposed to oxidizing atmospheres at temperatures of 400 to 1600.degree. C., is found within the triangular area ABCA of the Si.sub.3 N.sub.4 --SiO.sub.2 --M.sub.2 O.sub.3 ternary diagram depicted in FIG. 1. M is selected from the group of Yb, Dy, Er, Sc, and alloys having Yb, Y, Er, or Dy as one component and Sc, Al, Cr, Ti, (Mg +Zr) or (Ni+Zr) as a second component, said alloy having an effective ionic radius less than 0.89 A.

  5. Photo induced minority carrier annihilation at crystalline silicon surface in metal oxide semiconductor structure

    NASA Astrophysics Data System (ADS)

    Sameshima, Toshiyuki; Furukawa, Jun; Nakamura, Tomohiko; Shigeno, Satoshi; Node, Tomohito; Yoshidomi, Shinya; Hasumi, Masahiko

    2014-03-01

    We report the properties of features of photo induced minority carrier annihilation at the silicon surface in a metal-oxide-semiconductor (MOS) structure using 9.35 GHz microwave transmittance measurement. 7 Ω cm n-type 500-µm-thick crystalline silicon substrates coated with 100-nm-thick thermally grown SiO2 layers were prepared. Part of the SiO2 at the rear surface was removed. Al electrode bars were formed at the top and rear surfaces to form the structures Al/SiO2/Si/SiO2/Al and Al/SiO2/Si/Al. 635 nm light illumination onto the top surface caused photo induced carriers to be in one side of the silicon region of the Al electrode bar of the structure Al/SiO2/Si/SiO2/Al. Microwave transmittance was measured on the other side of the silicon region of the Al electrode bars. The measurement and analysis of microwave absorption by photo induced carriers laterally diffusing across the silicon region coated with Al electrodes revealed a change in the carrier recombination velocity at the silicon surface with the bias voltage applied onto the top Al electrode. The applied bias voltages of +2.0 and -2.2 V gave peaks at surface recombination velocities of 83 and 86 cm/s, respectively, for the sample structure Al/SiO2/Si/SiO2/Al, while it was 44 cm/s under the bias-free condition. A peak surface recombination velocity of 81 cm/s was only observed at a bias voltage of -2.0 V for the sample structure Al/SiO2/Si/Al.

  6. Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    PubMed Central

    Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E.; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S.

    2015-01-01

    As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215

  7. Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

    NASA Astrophysics Data System (ADS)

    Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2015-10-01

    We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

  8. Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

    NASA Astrophysics Data System (ADS)

    Hongda, Chen; Zan, Zhang; Beiju, Huang; Luhong, Mao; Zanyun, Zhang

    2015-12-01

    Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. Project supported by the National Basic Research Program of China (No. 2011CBA00608), the National Natural Science Foundation of China (Nos. 61178051, 61321063, 61335010, 61178048, 61275169), and the National High Technology Research and Development Program of China (Nos. 2013AA013602, 2013AA031903, 2013AA032204).

  9. Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping.

    PubMed

    Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S

    2015-01-01

    As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215

  10. THORIUM DISPERSION IN BISMUTH

    DOEpatents

    Bryner, J.S.

    1961-07-01

    The growth of thorium bismutaide particles, which are formed when thorium is suspended in liquid bismuth, is inhibited when the liquid metal suspension is being flowed through a reactor and through a heat exchanger in sequence. It involves the addition of as little as 1 part by weight of tellurium to 100 parts of thorium. This addition is sufficient to inhibit particle growth and agglomeration.

  11. The effect of thermal oxidation on the luminescence properties of nanostructured silicon.

    PubMed

    Liu, Lijia; Sham, Tsun-Kong

    2012-08-01

    Herein is reported a detailed study of the luminescence properties of nanostructured Si using X-ray excited optical luminescence (XEOL) in combination with X-ray absorption near-edge structures (XANES). P-type Si nanowires synthesized via electroless chemical etching from Si wafers of different doping levels and porous Si synthesized using electrochemical method are examined under X-ray excitation across the Si K-, L(3,2) -, and O K-edges. It is found that while as-prepared Si nanostructures are weak light emitters, intense visible luminescence is observed from thermally oxidized Si nanowires and porous Si. The luminescence mechanism of Si upon oxidation is investigated by oxidizing nanostructured Si at different temperatures. Interestingly, the two luminescence bands observed show different response with the variation of absorption coefficient upon Si and O core-electron excitation in elemental silicon and silicon oxide. A correlation between luminescence properties and electronic structures is thus established. The implications of the finding are discussed in terms of the behavior of the oxygen deficient center (OCD) and non-bridging oxygen hole center (NBOHC). PMID:22549930

  12. Optimization of oxidation processes to improve crystalline silicon solar cell emitters

    SciTech Connect

    Shen, L.; Liang, Z. C. Liu, C. F.; Long, T. J.; Wang, D. L.

    2014-02-15

    Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 Ω/□ performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 Ω/□ that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 10{sup 20} cm{sup −3} and 7.78 × 10{sup 20} cm{sup −3} and with junction depths between 0.46 μm and 0.55 μm possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%{sub abs} compared to conventional emitters with 50 Ω/□ sheet resistance.

  13. The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Demontis, V.; Sanna, C.; Melskens, J.; Santbergen, R.; Smets, A. H. M.; Damiano, A.; Zeman, M.

    2013-02-01

    Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism, we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon oxide (SiOx:H) interlayers with different metals (silver, aluminium, and chromium) in standard p-i-n a-Si:H solar cells. We use a unique inverse modeling approach to show that in most back reflectors the internal metal reflectance is lower than expected theoretically. However, the metal reflectance is increased by the addition of an oxide interlayer. Our experiments demonstrate that SiOx:H forms an interesting alternative interlayer because unlike the more commonly used ZnO:Al it can be deposited by plasma-enhanced chemical vapour deposition and it does not reduce the fill factor. The largest efficiency enhancement is obtained with a double interlayer of SiOx:H and ZnO:Al.

  14. Bismuth triflate-chiral bipyridine complexes as water-compatible chiral Lewis acids.

    PubMed

    Kobayashi, Shü; Ogino, Tsuyoshi; Shimizu, Haruka; Ishikawa, Shunpei; Hamada, Tomoaki; Manabe, Kei

    2005-10-13

    [reaction: see text] Catalytic asymmetric hydroxymethylation of silicon enolates with an aqueous formaldehyde solution has been developed using a chiral bismuth complex. This is the first example of highly enantioselective reactions using a chiral bismuth catalyst in aqueous media. In this paper, we have added Bi(OTf)(3)-1 complex as a "water-compatible Lewis acid". Bi(OTf)3 is unstable in the presence of water but is stabilized by the basic ligand. PMID:16209521

  15. Role of interfacial oxide in high-efficiency graphene-silicon Schottky barrier solar cells.

    PubMed

    Song, Yi; Li, Xinming; Mackin, Charles; Zhang, Xu; Fang, Wenjing; Palacios, Tomás; Zhu, Hongwei; Kong, Jing

    2015-03-11

    The advent of chemical vapor deposition (CVD) grown graphene has allowed researchers to investigate large area graphene/n-silicon Schottky barrier solar cells. Using chemically doped graphene, efficiencies of nearly 10% can be achieved for devices without antireflective coatings. However, many devices reported in past literature often exhibit a distinctive s-shaped kink in the measured I/V curves under illumination resulting in poor fill factor. This behavior is especially prevalent for devices with pristine (not chemically doped) graphene but can be seen in some cases for doped graphene as well. In this work, we show that the native oxide on the silicon presents a transport barrier for photogenerated holes and causes recombination current, which is responsible for causing the kink. We experimentally verify our hypothesis and propose a simple semiconductor physics model that qualitatively captures the effect. Furthermore, we offer an additional optimization to graphene/n-silicon devices: by choosing the optimal oxide thickness, we can increase the efficiency of our devices to 12.4% after chemical doping and to a new record of 15.6% after applying an antireflective coating. PMID:25685934

  16. Processing of uranium oxide and silicon carbide based fuel using polymer infiltration and pyrolysis

    NASA Astrophysics Data System (ADS)

    Singh, Abhishek K.; Zunjarrao, Suraj C.; Singh, Raman P.

    2008-09-01

    Ceramic composite pellets consisting of uranium oxide, UO 2, contained within a silicon carbide matrix, were fabricated using a novel processing technique based on polymer infiltration and pyrolysis (PIP). In this process, particles of depleted uranium oxide, in the form of U 3O 8, were dispersed in liquid allylhydridopolycarbosilane (AHPCS), and subjected to pyrolysis up to 900 °C under a continuous flow of ultra high purity argon. The pyrolysis of AHPCS, at these temperatures, produced near-stoichiometric amorphous silicon carbide ( a-SiC). Multiple polymer infiltration and pyrolysis (PIP) cycles were performed to minimize open porosity and densify the silicon carbide matrix. Analytical characterization was conducted to investigate chemical interaction between U 3O 8 and SiC. It was observed that U 3O 8 reacted with AHPCS during the very first pyrolysis cycle, and was converted to UO 2. As a result, final composition of the material consisted of UO 2 particles contained in an a-SiC matrix. The physical and mechanical properties were also quantified. It is shown that this processing scheme promotes uniform distribution of uranium fuel source along with a high ceramic yield of the parent matrix.

  17. Oxidation of silicon nitride sintered with rare-earth oxide additions

    NASA Technical Reports Server (NTRS)

    Mieskowski, D. M.; Sanders, W. A.

    1985-01-01

    The effects of rare-earth oxide additions on the oxidation of sintered Si3N4 were examined. Insignificant oxidation occurred at 700 and 1000 C, with no evidence of phase instability. At 1370 C, the oxidation rate was lowest for Y2O3 and increased for additions of La2O3, Sm2O3, and CeO2, in that order. Data obtained from X-ray diffraction, electron microprobe analysis, and scanning electron microscopy indicate that oxidation occurs via diffusion of cationic species from Si3N4 grain boundaries.

  18. Enhanced electron-hole droplet emission from surface-oxidized silicon photonic crystal nanocavities.

    PubMed

    Sumikura, Hisashi; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya

    2016-01-25

    We have observed electron-hole droplet (EHD) emission enhanced by silicon photonic crystal (Si PhC) nanocavities with a surface oxide. The EHD is employed as a massive emitter that remains inside the nanocavity to achieve efficient cavity-emitter coupling. Time-resolved emission measurements demonstrate that the surface oxide greatly reduces the nonradiative annihilation of the EHDs and maintains them in the PhC nanocavities. It is found that the surface-oxidized Si PhC nanocavity enhances EHD emission in addition to the Purcell enhancement of the resonant cavity, which will contribute to works on Si light emission and the cavity quantum electrodynamics of electron-hole condensates. PMID:26832491

  19. Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

    NASA Astrophysics Data System (ADS)

    Uchida, Takafumi; Jo, Mingyu; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Fujiwara, Akira; Takahashi, Yasuo

    2015-11-01

    Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates.

  20. Transparent conducting oxides (TCO{close_quote}s) for amorphous silicon solar cells

    SciTech Connect

    Hegedus, S.; Liang, H.; Gordon, R.G.

    1996-01-01

    The stability of various textured tin oxide and zinc oxide transparent conductors was evaluated against annealing in air, in vacuum or exposed to hydrogen plasma. Only fluorine-doped zinc oxide deposited by atmospheric pressure chemical vapor deposition (APCVD) had stable electrical and optical properties under all conditions. Thin layers of ZnO or TiO{sub 2} greatly improved the plasma resistance of SnO{sub 2}. A new TCO material, niobium-doped titanium dioxide (TiO{sub 2}:Nb) was able to withstand hydrogen plasmas with only slight increases in its optical absorption and conductivity. Composite TCO{close_quote}s consisting of glass/SnO{sub 2}:F/TiO{sub 2}:Nb were shown to provide good electrical contact to amorphous silicon solar cells. {copyright} {ital 1996 American Institute of Physics.}

  1. Metal-oxide-high-k-oxide-silicon memory structure using an Yb2O3 charge trapping layer

    NASA Astrophysics Data System (ADS)

    Pan, Tung-Ming; Chen, Jing-Wei

    2008-11-01

    In this letter, we proposed a metal-oxide-high-k-oxide-silicon (MOHOS)-type memory structure using a high-k Yb2O3 charge trapping layer for flash memory applications. When using Fowler-Nordheim for charging and discharging, the high-k Yb2O3 MOHOS-type memories that had been annealed at 800 °C exhibited large threshold voltage shifting (memory window of ˜2.2 V) and excellent data retention (charge loss of ˜6% measured time up to 104 s and at room temperature) because of the higher probability for trapping the charge carrier due to the formation of the Yb-silicate layer and the smooth surface roughness.

  2. White electroluminescence from C- and Si-rich thin silicon oxides

    NASA Astrophysics Data System (ADS)

    Jambois, O.; Garrido, B.; Pellegrino, P.; Carreras, Josep; Pérez-Rodríguez, A.; Montserrat, J.; Bonafos, C.; BenAssayag, G.; Schamm, S.

    2006-12-01

    White electroluminescence from carbon- and silicon-rich silicon oxide layers is reported. The films were fabricated by Si and C ion implantation at low energy in 40nm thick SiO2, followed by annealing at 1100°C. Structural and optical studies allow assigning the electroluminescence to Si nanocrystals for the red part of the spectrum, and to C-related centers for the blue and green components. The external efficiency has been estimated to 10-4%. Electrical characteristics show a Fowler-Nordheim behavior for voltages above 25V, corresponding to the onset of electroluminescence. This suggests that light emission is related to the impact ionization of radiative centers.

  3. Method of making highly porous, stable aluminum oxides doped with silicon

    DOEpatents

    Khosravi-Mardkhe, Maryam; Woodfield, Brian F.; Bartholomew, Calvin H.; Huang, Baiyu

    2016-03-22

    The present invention relates to a method for making high surface area and large pore volume thermally stable silica-doped alumina (aluminum oxide) catalyst support and ceramic materials. The ability of the silica-alumina to withstand high temperatures in presence or absence of water and prevent sintering allows it to maintain good activity over a long period of time in catalytic reactions. The method of preparing such materials includes adding organic silicon reagents to an organic aluminum salt such as an alkoxide in a controlled quantity as a doping agent in a solid state, solvent deficient reaction followed by calcination. Alternatively, the organic silicon compound may be added after calcination of the alumina, followed by another calcination step. This method is inexpensive and simple. The alumina catalyst support material prepared by the subject method maintains high pore volumes, pore diameters and surface areas at very high temperatures and in the presence of steam.

  4. Ion beam reactive sputter-deposition of silicon and zirconium oxides

    SciTech Connect

    Pringle, S.D.; Valizadeh, R.; Colligon, J.S.; Faunce, C.A.; Kheyrandish, H.

    1996-12-31

    Oxides of silicon and zirconium have been deposited onto silicon, carbon and aluminum substrates by reactive sputtering using a 1 keV argon ion beam and a controlled partial pressure of oxygen. Using RBS, film composition was determined for a given partial pressure of oxygen and different Si or Zr deposition rates. There is evidence of retained argon in the film which is primarily due to argon ions reflected from the sputtered target. Cross-sectional TEM was used to examine the film microstructure and morphology. Both silica films and sub-stoichiometric zirconia films were found to be amorphous, whereas stoichiometric zirconia films were found to be polycrystalline with grain sizes in the range 10--20 nm. A model has been developed to predict the composition of deposited films.

  5. Plasmonic silicon solar cell based on silver nanoparticles using ultra-thin anodic aluminum oxide template

    NASA Astrophysics Data System (ADS)

    Ho, Wen-Jeng; Cheng, Po-Yueh; Hsiao, Kuan-Yu

    2015-11-01

    This study fabricated a plasmonic silicon solar cell covered with silver (Ag) nanoparticles (NPs) using an ultra-thin anodic aluminum oxide (AAO) template as a deposition mask. An ultra-thin AAO template of approximately 200 nm was produced using a single-step anodization process in which an Al substrate was etched with phosphoric acid (H3PO4) for 3 min. We then used scanning electron microscopy (SEM) to examine the thickness and density of the AAO as a function of anodization duration, the results of which were confirmed by optical transmission measurement. The photovoltaic performance of the resulting silicon solar cell with Ag NPs was characterized according to photovoltaic current-voltage and external quantum efficiency. The inclusion of Ag NPs resulted in a 32.92% increase in conversion efficiency, compared with reference solar cells produced without Ag NPs.

  6. Interaction of silicon-based quantum dots with gibel carp liver: oxidative and structural modifications

    NASA Astrophysics Data System (ADS)

    Stanca, Loredana; Petrache, Sorina Nicoleta; Serban, Andreea Iren; Staicu, Andrea Cristina; Sima, Cornelia; Munteanu, Maria Cristina; Zărnescu, Otilia; Dinu, Diana; Dinischiotu, Anca

    2013-05-01

    Quantum dots (QDs) interaction with living organisms is of central interest due to their various biological and medical applications. One of the most important mechanisms proposed for various silicon nanoparticle-mediated toxicity is oxidative stress. We investigated the basic processes of cellular damage by oxidative stress and tissue injury following QD accumulation in the gibel carp liver after intraperitoneal injection of a single dose of 2 mg/kg body weight Si/SiO2 QDs after 1, 3, and 7 days from their administration. QDs gradual accumulation was highlighted by fluorescence microscopy, and subsequent histological changes in the hepatic tissue were noted. After 1 and 3 days, QD-treated fish showed an increased number of macrophage clusters and fibrosis, while hepatocyte basophilia and isolated hepatolytic microlesions were observed only after substantial QDs accumulation in the liver parenchyma, at 7 days after IP injection. Induction of oxidative stress in fish liver was revealed by the formation of malondialdehyde and advanced oxidation protein products, as well as a decrease in protein thiol groups and reduced glutathione levels. The liver enzymatic antioxidant defense was modulated to maintain the redox status in response to the changes initiated by Si/SiO2 QDs. So, catalase and glutathione peroxidase activities were upregulated starting from the first day after injection, while the activity of superoxide dismutase increased only after 7 days. The oxidative damage that still occurred may impair the activity of more sensitive enzymes. A significant inhibition in glucose-6-phosphate dehydrogenase and glutathione-S-transferase activity was noted, while glutathione reductase remained unaltered. Taking into account that the reduced glutathione level had a deep decline and the level of lipid peroxidation products remained highly increased in the time interval we studied, it appears that the liver antioxidant defense of Carassius gibelio does not counteract the oxidative stress induced 7 days after silicon-based QDs exposure in an efficient manner.

  7. Oxide trap relaxation spectroscopy: A new difference method to determine trap in oxidized silicon

    NASA Astrophysics Data System (ADS)

    Tan, Changhua; Xu, Mingzhen; Liu, Xiaowei; He, Yandong; Wang, Yangyuan

    1995-03-01

    A difference analysis method has been presented to separate and characterize interface and oxide traps generated in the metal-oxide-semiconductor structure under Fowler-Nordheim stress. The oxide trap relaxation measurement has been performed in dynamic voltage mode. For a high constant voltage stress condition, the effective oxide traps can be obtained by the difference Fowler-Nordheim current relaxation characteristics. For a low-voltage condition, the interface and effective oxide traps can be separated and determined by the difference subthreshold voltage relaxation characteristics. Using combined difference Fowler-Nordheim current and subthreshold voltage measurements, the density, centroid, and generation/capture cross section of the oxide traps can be obtained without the double current-voltage technique, thus permitting more accurate and quick measurement of the generated oxide traps. All difference Fowler-Nordheim current and subthreshold voltage versus the electron-fluence characteristics exhibit spectrum features. Analytical expressions for computing the interface and oxide traps have been derived and experimental results have been presented for a Fowler-Nordheim tunnel metal-oxide-semiconductor structure. Two interface and two oxide traps generated at Fowler-Nordheim stress have been obtained by the new technique.

  8. Composition, process, and apparatus, for removal of water and silicon mu-oxides from chlorosilanes

    DOEpatents

    Tom, Glenn M.; McManus, James V.

    1991-10-15

    A scavenger composition having utility for removal of water and silicon mu-oxide impurities from chlorosilanes, such scavenger composition comprising: (a) a support; and (b) associated with the support, one or more compound(s) selected from the group consisting of compounds of the formula: R.sub.a-x MCl.sub.x wherein: M is a metal selected from the group consisting of the monovalent metals lithium, sodium, and potassium; the divalent metals magnesium, strontium, barium, and calcium; and the trivalent metal aluminum; R is alkyl; a is a number equal to the valency of metal M; and x is a number having a value from 0 to a, inclusive; and wherein said compound(s) of the formula R.sub.a-x MCl.sub.x have been activated for impurity-removal service by a reaction scheme selected from those of the group consisting of: (i) reaction of such compound(s) with hydrogen chloride to form a first reaction product therefrom, followed by reaction of the first reaction product with a chlorosilane of the formula: SiH.sub.4"y Cl.sub.y, wherein y is a number having a value of from 1 to 3, inclusive; and (ii) reaction of such compound(s) with a chlorosilane of the formula: SiH.sub.4-y Cl.sub.y wherein y is a number having a value of 1 to 3, inclusive. A corresponding method of making the scavenger composition, and of purifying a chlorosilane which contains oxygen and silicon mu-oxide impurities, likewise are disclosed, together with a purifier apparatus, in which a bed of the scavenger composition is disposed. The composition, purification process, and purifier apparatus of the invention have utility in purifying gaseous chlorosilanes which are employed in the semiconductor industry as silicon source reagents for forming epitaxial silicon layers.

  9. Process for removal of water and silicon mu-oxides from chlorosilanes

    DOEpatents

    Tom, Glenn M.; McManus, James V.

    1992-03-10

    A scavenger composition having utility for removal of water and silicon mu-oxide impurities from chlorosilanes, such scavenger composition comprising: (a) a support; and (b) associated with the support, one or more compound(s) selected from the group consisting of compounds of the formula: R.sub.a-x MCl.sub.x wherein: M is a metal selected from the group consisting of the monovalent metals lithium, sodium, and potassium; the divalent metals magnesium, strontium, barium, and calcium; and the trivalent metal aluminum; R is alkyl; a is a number equal to the valency of metal M; and x is a number having a value of from 0 to a, inclusive; and wherein said compound(s) of the formula R.sub.a-x MCl.sub.x have been activated for impurity-removal service by a reaction scheme selected from those of the group consisting of: (i) reaction of such compound(s) with hydrogen chloride to form a first reaction product therefrom, followed by reaction of the first reaction product with a chlorosilane of the formula: SiH.sub.4-y Cl.sub.y, wherein y is a number having a value of from 1 to 3, inclusive; and (ii) reaction of such compound(s) with a chlorosilane of the formula: SiH.sub.4-y Cl.sub.y wherein y is a number having a value of 1 to 3, inclusive. A corresponding method of making the scavenger composition, and of purifying a chlorosilane which contains oxygen and silicon mu-oxide impurities, likewise are disclosed, together with a purifier apparatus, in which a bed of the scavenger composition is disposed. The composition, purification process, and purifier apparatus of the invention have utility in purifying gaseous chlorosilanes which are employed in the semiconductor industry as silicon source reagents for forming epitaxial silicon layers.

  10. Hydrogen passivation of silicon(100) used as templates for low-temperature epitaxy and oxidation

    NASA Astrophysics Data System (ADS)

    Atluri, Vasudeva Prasad

    Epitaxial growth, oxidation and ohmic contacts require surfaces as free as possible of physical defects and chemical contaminants, especially, oxygen and hydrocarbons. Wet chemical cleaning typically involves a RCA clean to remove contaminants by stripping the native oxide and regrowing a chemical oxide with only trace levels of carbon and metallic impurities. Low temperature epitaxy, T<800sp° C, limits the thermal budget for the desorption of impurities and surface oxides, and can be performed on processed structures. But, silicon dioxide cannot be desorbed at temperatures lower than 800sp°C. Recently, hydrogen passivation of Si(111) has been reported to produce stable and ordered surfaces at low temperatures. Hydrogen can then be desorbed between 200sp°C and 600sp°C prior to deposition. In this work, Si(100) is passivated via a solution of hydrofluoric acid in alcohol (methanol, ethanol, or isopropyl alcohol) with HF concentrations between 0.5 to 10%. A rinse in water or alcohol is performed after etching to remove excess fluorine. This work investigates wet chemical cleaning of Si(100) to produce ordered, hydrogen-terminated, oxygen- and carbon-free surfaces to be used as templates for low temperature epitaxial growth and rapid thermal oxidation. Ion beam analysis, Tapping mode atomic force microscopy, Fourier transform infrared spectroscopy, Secondary ion mass spectroscopy, Chemical etching, Capacitance-voltage measurements and Ellipsometry are used to measure, at the surface and interface, impurities concentration, residual disorder, crystalline order, surface topography, roughness, chemical composition, defects density, electrical characteristics, thickness, and refractive index as a function of cleaning conditions for homoepitaxial silicon growth and oxidation. The wetting characteristics of the Si(100) surfaces are measured with a tilting plate technique. Different materials are analyzed by ion beam analysis for use as hydrogen standards in elastic recoil detection of hydrogen on sample surfaces. The results obtained in this study provide a quantitative optimization of passivation of Si(100) surfaces and their use as templates for low temperature epitaxy and rapid thermal oxidation. Ion beam analysis shows that the total coverage of H increases during passivation of Si(100) via HF in alcohol, while Fourier transform infrared spectroscopy indicates that more complex termination than the formation of simple silicon hydrides occurs.

  11. Reliability of potassium ion electret in silicon oxide for vibrational energy harvester applications

    NASA Astrophysics Data System (ADS)

    Misawa, Kensuke; Sugiyama, Tatsuhiko; Hashiguchi, Gen; Toshiyoshi, Hiroshi

    2015-06-01

    In this paper, we report on the long-term reliability of potassium ion electret included in a thermally grown silicon oxide. The electret in this work is used in a microelectromechanical systems (MEMS) energy harvester to generate electrical current from mechanical vibration. A spring-mass system similar to a comb-drive electrostatic actuator is developed by silicon micromachining, and the surface is oxidized by wet-oxidation through a potassium hydroxide bubbler, thereby including potassium atoms at a high concentration. The potassium is then electrically polarized by an applied voltage of 150 V at 650 °C for 5 min. Degradation of the stored polarization potential is monitored in a vacuum of 1 × 10-3 Pa at elevated temperatures of 350, 400, and 450 °C. The time needed to cause a -1 dB decay of the potential is used as the lifetime of the electret, and the Arrhenius extrapolation plot suggested a life time of more than 400 years at 25 °C.

  12. High-aspect-ratio, silicon oxide-enclosed pillar structures in microfluidic liquid chromatography.

    PubMed

    Taylor, Lisa C; Lavrik, Nickolay V; Sepaniak, Michael J

    2010-11-15

    The present paper discusses the ability to separate chemical species using high-aspect-ratio, silicon oxide-enclosed pillar arrays. These miniaturized chromatographic systems require smaller sample volumes, experience less flow resistance, and generate superior separation efficiency over traditional packed bed liquid chromatographic columns, improvements controlled by the increased order and decreased pore size of the systems. In our distinctive fabrication sequence, plasma-enhanced chemical vapor deposition (PECVD) of silicon oxide is used to alter the surface and structural properties of the pillars for facile surface modification while improving the pillar mechanical stability and increasing surface area. The separation behavior of model compounds within our pillar systems indicated an unexpected hydrophobic-like separation mechanism. The effects of organic modifier, ionic concentration, and pressure-driven flow rate were studied. A decrease in the organic content of the mobile phase increased peak resolution while detrimentally effecting peak shape. A resolution of 4.7 (RSD = 3.7%) was obtained for nearly perfect Gaussian shaped peaks, exhibiting plate heights as low as 1.1 and 1.8 μm for fluorescein and sulforhodamine B, respectively. Contact angle measurements and DART mass spectrometry analysis indicate that our employed elastomeric soft bonding technique modifies pillar properties, creating a fortuitous stationary phase. This discovery provides evidence supporting the ability to easily functionalize PECVD oxide surfaces by gas-phase reactions. PMID:21028836

  13. Silicon improves seed germination and alleviates oxidative stress of bud seedlings in tomato under water deficit stress.

    PubMed

    Shi, Yu; Zhang, Yi; Yao, Hejin; Wu, Jiawen; Sun, Hao; Gong, Haijun

    2014-05-01

    The beneficial effects of silicon on plant growth and development under drought have been widely reported. However, little information is available on the effects of silicon on seed germination under drought. In this work, the effects of exogenous silicon (0.5 mM) on the seed germination and tolerance performance of tomato (Solanum lycopersicum L.) bud seedlings under water deficit stress simulated by 10% (w/v) polyethylene glycol (PEG-6000) were investigated in four cultivars ('Jinpengchaoguan', 'Zhongza No.9', 'Houpi L402' and 'Oubao318'). The results showed that the seed germination percentage was notably decreased in the four cultivars under water stress, and it was significantly improved by added silicon. Compared with the non-silicon treatment, silicon addition increased the activities of superoxide dismutase (SOD) and catalase (CAT), and decreased the production of superoxide anion (O2·) and hydrogen peroxide (H2O2) in the radicles of bud seedlings under water stress. Addition of silicon decreased the total phenol concentrations in radicles under water stress, which might contribute to the decrease of peroxidase (POD) activity, as observed in the in vivo and in vitro experiments. The decrease of POD activity might contribute to a less accumulation of hydroxyl radical (·OH) under water stress. Silicon addition also decreased the concentrations of malondialdehyde (MDA) in the radicles under stress, indicating decreased lipid peroxidation. These results suggest that exogenous silicon could improve seed germination and alleviate oxidative stress to bud seedling of tomato by enhancing antioxidant defense. The positive effects of silicon observed in a silicon-excluder also suggest the active involvement of silicon in biochemical processes in plants. PMID:24607576

  14. In situ transmission electron microscopy probing of native oxide and artificial layers on silicon nanoparticles for lithium ion batteries.

    PubMed

    He, Yang; Piper, Daniela Molina; Gu, Meng; Travis, Jonathan J; George, Steven M; Lee, Se-Hee; Genc, Arda; Pullan, Lee; Liu, Jun; Mao, Scott X; Zhang, Ji-Guang; Ban, Chunmei; Wang, Chongmin

    2014-11-25

    Surface modification of silicon nanoparticles via molecular layer deposition (MLD) has been recently proved to be an effective way for dramatically enhancing the cyclic performance in lithium ion batteries. However, the fundamental mechanism of how this thin layer of coating functions is not known, which is complicated by the inevitable presence of native oxide of several nanometers on the silicon nanoparticle. Using in situ TEM, we probed in detail the structural and chemical evolution of both uncoated and coated silicon particles upon cyclic lithiation/delithation. We discovered that upon initial lithiation, the native oxide layer converts to crystalline Li2O islands, which essentially increases the impedance on the particle, resulting in ineffective lithiation/delithiation and therefore low Coulombic efficiency. In contrast, the alucone MLD-coated particles show extremely fast, thorough, and highly reversible lithiation behaviors, which are clarified to be associated with the mechanical flexibility and fast Li(+)/e(-) conductivity of the alucone coating. Surprisingly, the alucone MLD coating process chemically changes the silicon surface, essentially removing the native oxide layer, and therefore mitigates side reactions and detrimental effects of the native oxide. This study provides a vivid picture of how the MLD coating works to enhance the Coulombic efficiency, preserves capacity, and clarifies the role of the native oxide on silicon nanoparticles during cyclic lithiation and delithiation. More broadly, this work also demonstrates that the effect of the subtle chemical modification of the surface during the coating process may be of equal importance to the coating layer itself. PMID:25347792

  15. In-Situ Transmission Electron Microscopy Probing of Native Oxide and Artificial Layers on Silicon Nanoparticles for Lithium Ion Batteries

    SciTech Connect

    He, Yang; Piper, Daniela M.; Gu, Meng; Travis, Jonathan J.; George, Steven M.; Lee, Se-Hee; Genc, Arda; Pullan, Lee; Liu, Jun; Mao, Scott X.; Zhang, Jiguang; Ban, Chunmei; Wang, Chong M.

    2014-11-25

    Surface modification of silicon nanoparticle via molecular layer deposition (MLD) has been recently proved to be an effective way for dramatically enhancing the cyclic performance in lithium ion batteries. However, the fundamental mechanism as how this thin layer of coating function is not known, which is even complicated by the inevitable presence of native oxide of several nanometers on the silicon nanoparticle. Using in-situ TEM, we probed in detail the structural and chemical evolution of both uncoated and coated silicon particles upon cyclic lithiation/delithation. We discovered that upon initial lithiation, the native oxide layer converts to crystalline Li2O islands, which essentially increases the impedance on the particle, resulting in ineffective lithiation/delithiation, and therefore low coulombic efficiency. In contrast, the alucone MLD coated particles show extremely fast, thorough and highly reversible lithiation behaviors, which are clarified to be associated with the mechanical flexibility and fast Li+/e- conductivity of the alucone coating. Surprisingly, the alucone MLD coating process chemically changes the silicon surface, essentially removing the native oxide layer and therefore mitigates side reaction and detrimental effects of the native oxide. This study provides a vivid picture of how the MLD coating works to enhance the coulombic efficiency and preserve capacity and clarifies the role of the native oxide on silicon nanoparticles during cyclic lithiation and delithiation. More broadly, this work also demonstrated that the effect of the subtle chemical modification of the surface during the coating process may be of equal importance as the coating layer itself.

  16. Towards a high efficiency amorphous silicon solar cell using molybdenum oxide as a window layer instead of conventional p-type amorphous silicon carbide

    NASA Astrophysics Data System (ADS)

    Il Park, Sang; Jae Baik, Seung; Im, Jong-San; Fang, Liang; Jeon, Jin-Wan; Su Lim, Koeng

    2011-08-01

    A thermally evaporated molybdenum oxide (MoO3) film was used as a window layer of a hydrogenated amorphous silicon (a-Si:H) solar cell instead of the conventional p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) film. The short circuit current density (JSC) and fill factor were increased due to the wide optical band gap and high conductivity of the MoO3 film. As a result, the conversion efficiency of the fabricated MoO3 solar cell was increased to 6.21% compared to the typical a-Si:H solar cell (5.97%).

  17. Soft X-ray spectroscopy of oxide-embedded and functionalized silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Kelly, Joel A.; Henderson, Eric J.; Hessel, Colin M.; Cavell, Ronald G.; Veinot, Jonathan G. C.

    2010-02-01

    An X-ray absorption spectroscopic investigation into the electronic and optical properties of silicon nanocrystals (Si-NCs) derived from the thermal processing of hydrogen silsesquioxane (HSQ) is presented. Hydrofluoric (HF) acid etching and subsequent photochemical hydrosilylation with styrene liberates the as-synthesized oxide-embedded Si-NCs from their matrix and renders them solution dispersible through the formation of surface Si-C bonds. The impact of this process on the photoluminescence behavior exhibited by these materials has been studied through near edge X-ray absorption fine structure (NEXAFS) and X-ray excited optical luminescence (XEOL) spectroscopies.

  18. Oxidation behavior in reaction-bonded aluminum-silicon alloy/alumina powder compacts

    SciTech Connect

    Yokota, S.H.

    1992-12-01

    Goal of this research is to determine the feasibility of producing low-shrinkage mullite/alumina composites by applying the reaction-bonded alumina (RBAO) process to an aluminum-silicon alloy/alumina system. Mirostructural and compositional changes during heat treatment were studied by removing samples from the furnace at different steps in the heating schedule and then using optical and scanning electron microscopy, EDS and XRD to characterize the powder compacts. Results suggest that the oxidation behavior of the alloy compact is different from the model proposed for the pure Al/alumina system.

  19. Low voltage resistive switching devices based on chemically produced silicon oxide

    NASA Astrophysics Data System (ADS)

    Li, Can; Jiang, Hao; Xia, Qiangfei

    2013-08-01

    We developed nonvolatile metal/SiOx/Si memristive devices based on ultrathin (˜1 nm) silicon oxide that was produced in a Piranha solution. The devices exhibited repeatable resistive switching behavior with low programming voltages (as low as 0.5 V) and high ON/OFF conductance ratio. Devices with active metals as top electrodes were bipolar switches, while those with inert metal electrodes were unipolar. We also studied the switching mechanisms for both types of devices based on the filament formation and rupture, and proposed conduction models for Pt/SiOx/Si devices.

  20. Scattering strength of the scatterer inducing variability in graphene on silicon oxide

    NASA Astrophysics Data System (ADS)

    Katoch, Jyoti; Le, Duy; Singh, Simranjeet; Rao, Rahul; Rahman, Talat S.; Ishigami, Masa

    2016-03-01

    Large variability of carrier mobility of graphene-based field effect transistors hampers graphene science and technology. We show that the number of the scatterer responsible for the observed variability on graphene devices on silicon oxide can be determined by finding the number of hydrogen that can be chemisorbed on graphene. We use the relationship between the number of the scatterer and the mobility of graphene devices to determine that the variability-inducing scatterer possesses scattering strength 10 times smaller than that of adsorbed potassium atoms and 50 times smaller than that of ion-beam induced vacancies. Our results provide an important, quantitative input towards determining the origin of the variability.

  1. Performance and characteristics of double layer porous silicon oxide resistance random access memory

    NASA Astrophysics Data System (ADS)

    Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Tseng, Bae-Heng; Shih, Chih-Cheng; Pan, Yin-Chih; Chen, Min-Chen; Pan, Jhih-Hong; Syu, Yong-En; Sze, Simon M.

    2013-06-01

    A bilayer resistive switching memory device with an inserted porous silicon oxide layer is investigated in this letter. Compared with single Zr:SiOx layer structure, Zr:SiOx/porous SiOx structure outperforms from various aspects, including low operating voltages, tighter distributions of set voltage, higher stability of both low resistance state and high resistance state, and satisfactory endurance characteristics. Electric field simulation by comsolTM Multiphysics is applied, which corroborates that intensive electric field around the pore in porous SiOx layer guides the conduction of electrons. The constraint of conduction path leads to better stabilization and prominent performance of bilayer resistive switching devices.

  2. Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

    SciTech Connect

    Coux, P. de; Bachelet, R.; Fontcuberta, J.; Sánchez, F.; Warot-Fonrose, B.; Skumryev, V.; Lupina, L.; Niu, G.; Schroeder, T.

    2014-07-07

    A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe{sub 2}O{sub 4} films can be grown epitaxially on Si(111) using a Y{sub 2}O{sub 3} buffer layer, and remarkably the Y{sub 2}O{sub 3}/Si(111) interface is stable and remains atomically sharp. CoFe{sub 2}O{sub 4} films present high crystal quality and high saturation magnetization.

  3. Electro-oxidation of organic fuels catalyzed by ultrasmall silicon nanoparticles

    NASA Astrophysics Data System (ADS)

    Choi, Yongki; Wang, Gang; Nayfeh, Munir H.; Yau, Siu-Tung

    2008-10-01

    Ultrasmall colloidal silicon nanoparticles behave as electrocatalysts for the oxidation of ethanol, methanol, and glucose. Electrochemical characterization of particle-immobilized electrodes shows a catalytic onset between -0.4 and 0 V versus Ag/AgCl at neutral pH. The onset potential and the catalytic strength are dependent on the particle size. A prototype hybrid biofuel cell was constructed, using the particles as the anode catalyst. The catalytic activity undergoes a 50-fold increase under alkaline condition compared to that under acidic condition. An unexpected light dependence of the catalytic current was observed. A significant increase in the catalytic current is obtained when the catalysis is performed in darkness.

  4. Ultrasensitive food toxin biosensor using frequency based signals of silicon oxide nanoporous structure

    NASA Astrophysics Data System (ADS)

    Ghosh, H.; RoyChaudhuri, C.

    2013-06-01

    We report an electrochemically fabricated silicon oxide nanoporous structure for ultrasensitive detection of AfB1 in food by shift in peak frequency corresponding to maximum sensitivity. It has been observed that the impedance sensitivity changes from 19% to 40% (which is only twice) where as the peak frequency shifts from 500 Hz to 50 kHz, for a change in concentration from 1 fg/ml to 1 pg/ml. This has been attributed to the combined effect of the significant pore narrowing with increasing AfB1 concentration and the opposing nature of impedance change within the nanopores and the conducting substrate immediately below the nanoporous layer.

  5. Degradation of Gate Oxide Reliability due to Plasma-Deposited Silicon Nitride

    NASA Astrophysics Data System (ADS)

    Ogino, Masaaki; Sugahara, Yoshiyuki; Kuribayashi, Hitoshi; Yamabe, Kikuo

    2004-03-01

    The effects of plasma-enhanced chemical vapor deposition (PE-CVD) silicon nitride (p-SiN) passivation films on time dependent dielectric breakdown (TDDB) of gate oxide were studied. It was found that degradation of TDDB characteristics with p-SiN films was suppressed by the change in p-SiN deposition conditions. The correlation between trapped electron density and TDDB characteristics varied, depending on the p-SiN films. The degradation of TDDB characteristics was also enhanced with phosphosilicate glass (PSG) under the p-SiN passivation film.

  6. TiO2 and HfO2 in electrolyte-oxide-silicon configuration for applications in bioelectronics

    NASA Astrophysics Data System (ADS)

    Wallrapp, Frank; Fromherz, Peter

    2006-06-01

    We study the electrical properties of thin TiO2 films made by atomic layer deposition (ALD) on p-doped silicon in an electrolyte-oxide-silicon (EOS) configuration. The electrolyte contact of the TiO2/Si heterostructure allows measurements of the differential capacitance for a wide range of bias voltages as they cannot be performed in a metal-oxide-silicon structure because of extensive leakage currents. In the accumulation region of p-silicon, we find a saturation of capacitance that decreases with oxide thickness, indicating an insulator with a dielectric constant of 34. In the inversion region of p-silicon, the capacitance increases in two steps far beyond the saturation capacitance. We assign this effect to the presence of electrons in TiO2 which is controlled by the bias voltage and by immobile positive charges at the TiO2/Si interface: When the Fermi energy in p-silicon is raised to the level of the low lying conduction band of TiO2, electrons accumulate in two layers near the TiO2/Si interface and at the electrolyte/TiO2 interface with a concomitantly enhanced differential capacitance. As a control, we study HfO2 films also made by ALD. We obtain a dielectric constant of 15 from the capacitance in the accumulation region of p-silicon. For HfO2 with a high lying conduction band, the capacitance decreases as expected in the inversion region for the high-frequency limit of silicon. The electrical characterization of TiO2 and HfO2 in EOS junctions opens future applications of high-κ materials in bioelectronics for efficient capacitive interaction of silicon chips and living cells.

  7. 21 CFR 73.2110 - Bismuth citrate.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Bismuth citrate. 73.2110 Section 73.2110 Food and... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2110 Bismuth citrate. (a) Identity. The color additive bismuth citrate is the synthetically prepared crystalline salt of bismuth and citric acid,...

  8. 21 CFR 73.2110 - Bismuth citrate.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Bismuth citrate. 73.2110 Section 73.2110 Food and... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2110 Bismuth citrate. (a) Identity. The color additive bismuth citrate is the synthetically prepared crystalline salt of bismuth and citric acid,...

  9. ZnO transparent conductive oxide for thin film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  10. The electroluminescence mechanism of Er³⁺ in different silicon oxide and silicon nitride environments

    SciTech Connect

    Rebohle, L. Wutzler, R.; Braun, M.; Helm, M.; Skorupa, W.; Berencén, Y.; Ramírez, J. M.; Garrido, B.; Hiller, D.

    2014-09-28

    Rare earth doped metal-oxide-semiconductor (MOS) structures are of great interest for Si-based light emission. However, several physical limitations make it difficult to achieve the performance of light emitters based on compound semiconductors. To address this point, in this work the electroluminescence (EL) excitation and quenching mechanism of Er-implanted MOS structures with different designs of the dielectric stack are investigated. The devices usually consist of an injection layer made of SiO₂ and an Er-implanted layer made of SiO₂, Si-rich SiO₂, silicon nitride, or Si-rich silicon nitride. All structures implanted with Er show intense EL around 1540 nm with EL power efficiencies in the order of 2 × 10⁻³ (for SiO₂:Er) or 2 × 10⁻⁴(all other matrices) for lower current densities. The EL is excited by the impact of hot electrons with an excitation cross section in the range of 0.5–1.5 × 10⁻¹⁵cm⁻². Whereas the fraction of potentially excitable Er ions in SiO₂ can reach values up to 50%, five times lower values were observed for other matrices. The decrease of the EL decay time for devices with Si-rich SiO₂ or Si nitride compared to SiO₂ as host matrix implies an increase of the number of defects adding additional non-radiative de-excitation paths for Er³⁺. For all investigated devices, EL quenching cross sections in the 10⁻²⁰ cm² range and charge-to-breakdown values in the range of 1–10 C cm⁻² were measured. For the present design with a SiO₂ acceleration layer, thickness reduction and the use of different host matrices did not improve the EL power efficiency or the operation lifetime, but strongly lowered the operation voltage needed to achieve intense EL.

  11. Densification of chemical vapor deposition silicon dioxide film using oxygen radical oxidation

    SciTech Connect

    Kawase, Kazumasa; Uehara, Yasushi; Teramoto, Akinobu; Suwa, Tomoyuki; Hattori, Takeo; Ohmi, Tadahiro; Umeda, Hiroshi

    2012-02-01

    Silicon dioxide (SiO{sub 2}) films formed by chemical vapor deposition (CVD) were treated with oxygen radical oxidation using Ar/O{sub 2} plasma excited by microwave. The mass density depth profiles, carrier trap densities, and current-voltage characteristics of the radical-oxidized CVD-SiO{sub 2} films were investigated. The mass density depth profiles were estimated with x ray reflectivity measurement using synchrotron radiation of SPring-8. The carrier trap densities were estimated with x ray photoelectron spectroscopy time-dependent measurement. The mass densities of the radical-oxidized CVD-SiO{sub 2} films were increased near the SiO{sub 2} surface. The densities of the carrier trap centers in these films were decreased. The leakage currents of the metal-oxide-semiconductor capacitors fabricated by using these films were reduced. It is probable that the insulation properties of the CVD-SiO{sub 2} film are improved by the increase in the mass density and the decrease in the carrier trap density caused by the restoration of the Si-O network with the radical oxidation.

  12. CO oxidation catalyzed by silicon carbide (SiC) monolayer: A theoretical study.

    PubMed

    Wang, Nan; Tian, Yu; Zhao, Jingxiang; Jin, Peng

    2016-05-01

    Developing metal-free catalysts for CO oxidation has been a key scientific issue in solving the growing environmental problems caused by CO emission. In this work, the potential of the silicon carbide (SiC) monolayer as a metal-free catalyst for CO oxidation was systematically explored by means of density functional theory (DFT) computations. Our results revealed that CO oxidation reaction can easily proceed on SiC nanosheet, and a three-step mechanism was proposed: (1) the coadsorption of CO and O2 molecules, followed by (2) the formation of the first CO2 molecule, and (3) the recovery of catalyst by a second CO molecule. The last step is the rate-determining one of the whole catalytic reaction with the highest barrier of 0.65eV. Remarkably, larger curvature is found to have a negative effect on the catalytic performance of SiC nanosheet for CO oxidation. Therefore, our results suggested that flat SiC monolayer is a promising metal-free catalyst for CO oxidation. PMID:27135172

  13. Fatigue failure in thin-film polycrystalline silicon is due to subcritical cracking within the oxide layer

    NASA Astrophysics Data System (ADS)

    Alsem, D. H.; Stach, E. A.; Muhlstein, C. L.; Ritchie, R. O.

    2005-01-01

    It has been established that microelectromechanical systems created from polycrystalline silicon thin films are subject to cyclic fatigue. Prior work by the authors has suggested that although bulk silicon is not susceptible to fatigue failure in ambient air, fatigue in micron-scale silicon is a result of a "reaction-layer" process, whereby high stresses induce a thickening of the post-release oxide at stress concentrations such as notches, which subsequently undergoing moisture-assisted cracking. However, there exists some controversy regarding the post-release oxide thickness of the samples used in the prior study. In this letter, we present data from devices from a more recent fabrication run that confirm our prior observations. Additionally, new data from tests in high vacuum show that these devices do not fatigue when oxidation and moisture are suppressed. Each of these observations lends credence to the "reaction-layer" mechanism.

  14. High k nanophase zinc oxide on biomimetic silicon nanotip array as supercapacitors.

    PubMed

    Han, Hsieh-Cheng; Chong, Cheong-Wei; Wang, Sheng-Bo; Heh, Dawei; Tseng, Chi-Ang; Huang, Yi-Fan; Chattopadhyay, Surojit; Chen, Kuei-Hsien; Lin, Chi-Feng; Lee, Jiun-Haw; Chen, Li-Chyong

    2013-04-10

    A 3D trenched-structure metal-insulator-metal (MIM) nanocapacitor array with an ultrahigh equivalent planar capacitance (EPC) of ~300 ?F cm(-2) is demonstrated. Zinc oxide (ZnO) and aluminum oxide (Al2O3) bilayer dielectric is deposited on 1 ?m high biomimetic silicon nanotip (SiNT) substrate using the atomic layer deposition method. The large EPC is achieved by utilizing the large surface area of the densely packed SiNT (!5 10(10) cm(-2)) coated conformally with an ultrahigh dielectric constant of ZnO. The EPC value is 30 times higher than those previously reported in metal-insulator-metal or metal-insulator-semiconductor nanocapacitors using similar porosity dimensions of the support materials. PMID:23432577

  15. Purple-to-yellow tunable luminescence of Ce 3+ doped yttrium-silicon-oxide-nitride phosphors

    NASA Astrophysics Data System (ADS)

    Yang, Hucheng; Liu, Yin; Ye, Song; Qiu, Jianrong

    2008-01-01

    Phosphors of Ce 3+ doped yttrium-silicon-oxide-nitride system (Ce-YSON) were synthesized by carbothermal reduction and nitridation. Their crystal structure changes gradually from pure oxide Y 2Si 2O 7 to nitride YSi 3N 5 state with an increase in dosage of Si 3N 4 and carbon powder. Y 2Si 2O 7:0.02Ce 3+ has shown bluish purple emission, maximum at 408 nm with 340 nm excitation wavelength. YSi 3N 5:0.02Ce 3+ has shown yellow emission, maximum at 552 nm wavelength with 374 nm excitation. The absorption of Ce-YSON increases and extends from 400 to 600 nm with nitrogen content increment. With 400 nm excitation wavelength, Ce-YSON has shown purple-blue-cyan-yellow tunable luminescence with increasing nitridation degree.

  16. Hydrogenation kinetics in oxidized boron-doped silicon irradiated by keV electrons

    NASA Astrophysics Data System (ADS)

    Lin, Wallace Wan-Li; Sah, Chih-Tang

    1988-08-01

    Hydrogenation kinetics of boron acceptors in oxidized silicon during and after repeated 8-keV electron irradiation (225-2700-μC/cm2 stresses and 10-168-h interirradiation anneals) at room temperature are reported. Hydrogenation proceeds rapidly during irradiation but continues for many hours after the 8-keV electron beam is removed. Postoxidation process dependencies show that postoxidation and postmetallization annealing processes reduce the hydrogenation effect during the 8-keV electron irradiation, while exposure of the oxide to water prior to aluminum electrode deposition enhances it. The data can be interpreted by our two-reaction model consisting of the hydrogen capture reaction by the boron acceptor and the hydrogen recombination reaction to form hydrogen molecule.

  17. Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants

    SciTech Connect

    Witczak, Steven C.; Winokur, Peter S.; Lacoe, Ronald C.; Mayer, Donald C.

    2000-06-01

    An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps, and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with {sup 60}Co {gamma} rays at 100 degree sign C and zero bias, where the dopant deactivation is significant.(c) 2000 American Institute of Physics.

  18. Location of holes in silicon-rich oxide as memory states

    NASA Astrophysics Data System (ADS)

    Crupi, I.; Lombardo, S.; Rimini, E.; Gerardi, C.; Fazio, B.; Melanotte, M.

    2002-11-01

    The induced changes of the flatband voltage by the location of holes in a silicon-rich oxide (SRO) film sandwiched between two thin SiO2 layers [used as gate dielectric in a metal-oxide-semiconductor (MOS) capacitor] can be used as the two states of a memory cell. The principle of operation is based on holes permanently trapped in the SRO layer and reversibly moved up and down, close to the metal and the semiconductor, in order to obtain the two logic states of the memory. The concept has been verified by suitable experiments on MOS structures. The device exhibits an excellent endurance behavior and, due to the low mobility of the holes at low field in the SRO layer, a much longer refresh time compared to conventional dynamic random access memory cells.

  19. Encapsulation of Au Nanoparticles on a Silicon Wafer During Thermal Oxidation.

    PubMed

    Bowker, M; Crouch, J J; Carley, A F; Davies, P R; Morgan, D J; Lalev, G; Dimov, S; Pham, D-T

    2013-10-17

    We report the behavior of Au nanoparticles anchored onto a Si(111) substrate and the evolution of the combined structure with annealing and oxidation. Au nanoparticles, formed by annealing a Au film, appear to "float" upon a growing layer of SiO2 during oxidation at high temperature, yet they also tend to become partially encapsulated by the growing silica layers. It is proposed that this occurs largely because of the differential growth rates of the silica layer on the silicon substrate between the particles and below the particles due to limited access of oxygen to the latter. This in turn is due to a combination of blockage of oxygen adsorption by the Au and limited oxygen diffusion under the gold. We think that such behavior is likely to be seen for other metal-semiconductor systems. PMID:24163715

  20. Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants

    SciTech Connect

    WITCZAK,STEVEN C.; WINOKUR,PETER S.; LACOE,RONALD C.; MAYER,DONALD C.

    2000-02-01

    An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage (C-V) measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with {sup 60}Co {gamma}-rays at 100 C and zero bias, where the dopant deactivation is significant.

  1. Enhanced light emission from germanium microdisks on silicon by surface passivation through thermal oxidation

    NASA Astrophysics Data System (ADS)

    Xu, Xuejun; Hashimoto, Hideaki; Sawano, Kentarou; Nohira, Hiroshi; Maruizumi, Takuya

    2016-05-01

    We have observed enhanced direct-gap light emission from undoped and n-doped germanium microdisks on silicon. The enhancement is attributed mainly to increased carrier density due to surface passivation of the dry-etched sidewall. The enhancement factor increases as the disk size decreases, approaching 4 for microdisks with radii of 1 µm. To achieve maximum enhancement and not modify the geometric structure of resonators, 450-500 °C is found to be the best temperature window. Thermal oxidation is also effective for the degraded interface induced by sputtered Al2O3. These results indicate that thermal oxidation is a promising method suitable for fabrication of low-threshold germanium lasers.

  2. Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy

    SciTech Connect

    Goodrich, T. L.; Parisi, J.; Cai, Z.; Ziemer, K. S.

    2007-01-22

    Magnesium oxide (111) was grown epitaxially on hexagonal silicon carbide (6H-SiC) (0001) substrates at low temperatures by molecular beam epitaxy and a remote oxygen plasma source. The films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. Crystal structure, morphology, and growth rate of the magnesium oxide (MgO) films were found to be dependent on the magnesium flux, indicating a magnesium adsorption controlled growth mechanism. The single crystalline MgO thin films had an epitaxial relationship where MgO (111) parallel 6H-SiC (0001) and were stable in both air and 10{sup -9} Torr up to 1023 K.

  3. ADSORPTION-BISMUTH PHOSPHATE METHOD FOR SEPARATING PLUTONIUM

    DOEpatents

    Russell, E.R.; Adamson, A.W.; Boyd, G.E.

    1960-06-28

    A process is given for separating plutonium from uranium and fission products. Plutonium and uranium are adsorbed by a cation exchange resin, plutonium is eluted from the adsorbent, and then, after oxidation to the hexavalent state, the plutonium is contacted with a bismuth phosphate carrier precipitate.

  4. Bismuth ochers from San Diego Co., California

    USGS Publications Warehouse

    Schaller, W.T.

    1911-01-01

    The chief points brought out in this paper may be briefly summarized as follows: (1) The existence of natural Bi2O3 has not been established. (2) Natural bismite or bismuth ocher, when pure, is more probably a bismuth hydroxide. (3) The bismuth ochers from San Diego County, California, are either a bismuth hydroxide or bismuth vanadate, pucherite, or mixtures of these two. (4) Pucherite has been found noncrystallin and determined for the first time in the United States.

  5. Ion-induced electrical breakdown in metal-oxide-silicon capacitors

    SciTech Connect

    Milgram, A.A. )

    1990-02-01

    Metal-oxide-silicon (MOS) capacitors used in the breakdown mode were constructed to detect {sup 252}Cf fission fragments. The physical effects related to radiation-induced breakdown were studied and found to have a relationship to intrinsic dielectric breakdown. Physical studies were made of the effect of oxide annealing temperature between 100 and 400 K, oxide thickness, differing metal electrodes, and the materials interaction due to the spark discharge breakdown. By means of both silicon-ion and cesium-ion implants near the metal-SiO{sub 2} interface of the MOS capacitor, the current emission into the SiO{sub 2} was found to be significantly enhanced; however, the enhanced emission was found to have no effect on increasing the sensitivity to lower specific ionization radiation as seen by fission-fragment detection. The results indicate that the radiation-induced breakdown mechanism occurs within the bulk, or body, of the SiO{sub 2} film and is not influenced by conditions at the dielectric interfaces. It was found that thin films of the refractory metals HfO{sub 2} or ZrO{sub 2} between the oxide film and a top aluminum electrode prevented Al-SiO{sub 2} interaction during discharge and allowed operation of the MOS capacitor at higher electric fields. Obtaining higher operating fields significantly improved the minimum specific ionization detectability to 14 MeV cm{sup 2}/mg from a prior value of 22 MeV cm{sup 2}/ mg.

  6. Reactive atomization of silicon to form in situ oxide sintering aids

    NASA Astrophysics Data System (ADS)

    Wu, Y.; Zeng, X.; Lavernia, E. J.; Schoenung, J. M.

    1996-08-01

    The present investigation demonstrated the feasibility of using reactive atomization to produce Si powder with in situ oxide sintering aids. With further process optimization, this powder may be an alternative starting material to the conventional, mechanically blended, Si-plus-oxide powder used to produce commercial sintered reaction bonded silicon nitride (SRBSN). In the reactive atomization approach, yttrium and aluminum additives were introduced into silicon metal during induction melting. Reactive atomization was accomplished using a N2-5 pct O2 mixture as the atomization gas. During atomization, oxygen in the atomization gas reacted with Y and Al in the Si melt to produce Y2O3 and Al2O3, which act as in situ sintering aids. The reactive atomized powder demonstrated a Gaussian distribution with a mean diameter of 36 μm. The powder fines (<38 μm) were used to produce cold isostatically pressed compacts that were subsequently reaction bonded and sintered. The results demonstrate that β-Si3N4 formed during reaction bonding and sintering. The density of the SRBSN was 77 pct of theoretical. Transmission electron microscopy (TEM) studies indicated the presence of a glassy phase on the grain boundaries, which is typical in SRBSN and indicative of the presence of the in situ sintering aids. A kinetic model was used to study the influence of processing parameters, such as droplet temperature and oxygen partial pressure, on the kinetics of oxide formation during reactive atomization. The results suggest that the volume fraction of oxides increases with increasing droplet temperature and oxygen partial pressure in the atomization gas mixture.

  7. Silicon Carbide and Uranium Oxide Based Composite Fuel Preparation Using Polymer Infiltration and Pyrolysis

    SciTech Connect

    Singh, Abhishek K.; Zunjarrao, Suraj C.; Singh, Raman P.

    2006-07-01

    Ceramic composite pellets consisting of uranium oxide, U{sub 3}O{sub 8}, particles in a silicon carbide matrix are fabricated using a novel processing technique based on polymer infiltration and pyrolysis (PIP). In this process, spherical particles of depleted uranium oxide, in the form of U{sub 3}O{sub 8}, are dispersed in liquid allyl-hydrido-poly-carbo-silane (AHPCS), and subjected to pyrolysis up to 900 deg. C under a continuous flow of ultra high purity (UHP) argon. Pyrolysis of AHPCS produces near-stoichiometric amorphous SiC at 900 deg. C. Multiple polymer infiltration and pyrolysis (PIP) cycles are required to minimize open porosity and densify the silicon carbide matrix, in order to enhance the mechanical strength of the material. Structural characterization is carried out after first pyrolysis to investigate chemical interaction between U{sub 3}O{sub 8} and SiC. The physical and mechanical properties are also quantified, and it is shown that this processing scheme promotes uniform distribution of uranium fuel source along with a high ceramic yield of the parent matrix. Furthermore, the processing technique involves lower energy requirements than conventional sintering processes currently in practice. (authors)

  8. Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxides

    DOE PAGESBeta

    Young, David L.; Nemeth, William; Grover, Sachit; Norman, Andrew; Yuan, Hao-Chih; Lee, Benjamin G.; LaSalvia, Vincenzo; Stradins, Paul

    2014-01-01

    We describe the design, fabrication and results of passivated contacts to n-type silicon utilizing thin SiO2 and transparent conducting oxide layers. High temperature silicon dioxide is grown on both surfaces of an n-type wafer to a thickness <50 Å, followed by deposition of tin-doped indium oxide (ITO) and a patterned metal contacting layer. As deposited, the thin-film stack has a very high J0,contact, and a non-ohmic, high contact resistance. However, after a forming gas anneal, the passivation quality and the contact resistivity improve significantly. The contacts are characterized by measuring the recombination parameter of the contact (J0,contact) and the specificmore » contact resistivity (ρcontact) using a TLM pattern. The best ITO/SiO2 passivated contact in this study has J0,contact = 92.5 fA/cm2 and ρcontact = 11.5 mOhm-cm2. These values are placed in context with other passivating contacts using an analysis that determines the ultimate efficiency and the optimal area fraction for contacts for a given set of (J0,contact, ρcontact) values. The ITO/SiO2 contacts are found to have a higher J0,contact, but a similar ρcontact compared to the best reported passivated contacts.« less

  9. Infrared Characterization of Biotinylated Silicon Oxide Surfaces, Surface Stability and Specific Attachment of Streptavidin

    PubMed Central

    Lapin, Norman A.; Chabal, Yves J.

    2009-01-01

    Biotinylation of silicon oxide surfaces, surface stability and evolution of these functionalized surfaces under bio-specific attachment of streptavidin were studied using Fourier Transform Infrared Spectroscopy. Adsorption and stability of species or changes in the resulting surfaces were monitored after each step of the attachment processes. The silicon oxide surface was initially derivatized by 3-aminopropyltriethoxysilane (APTES) and the quality of the 3-aminopropylsiloxane (APS) surface was monitored using the Si-O-Si and Si-O-C region of its vibrational spectrum. A strong correlation between surface quality and pre-silanization atmospheric moisture content was established. The vibrational fingerprint of biotinylation was determined, both for physisorption and chemisorption to the surface. A new band (i.e. not previous associated with biotin) at ~1250 cm−1 was identified as a vibrational mode of the biotin ureido group, making it possible to track changes in the biotinylated surface in the presence of streptavidin. Some of the biotin ureido at the surface was found to be affected by the protein adsorption and rinse steps while remaining chemisorbed to the surface. The stability of the APS was found to impact the behavior of the biotinylated surface (measured using the Si-O-Si/Si-O-C and ~1250 cm−1 absorption bands respectively). PMID:19489542

  10. Dry Cleaning Technology for Removal of Silicon Native Oxide Employing Hot NH3/NF3 Exposure

    NASA Astrophysics Data System (ADS)

    Ogawa, Hiroki; Arai, Tomoharu; Yanagisawa, Michihiko; Ichiki, Takanori; Horiike, Yasuhiro

    2002-08-01

    A new dry cleaning technology for removal of silicon (Si) native oxides from contact holes employing a hot ammonium (NH3)/nitrogen trifluoride (NF3) mixture has been studied. The NH3/NF3 mixture heated at a high temperature in a quartz tube enabled etching of the silicon dioxide (SiO2) film placed in the downstream region. The mechanism of the etching reaction which was investigated using in-situ infrared spectroscopy and X-ray photoelectron spectroscopy analysis was revealed as follows: NF3 alone in the NH3/NF3 mixture was decomposed above 600°C, probably producing NFx (x=1, 2) and fluorine atoms. These active species reacted with NH3, thereby generating ammonium hydrogen fluoride (NH4F \\cdot HF) and/or ammonium fluoride (NH4F) in the gas phase which are considered to be SiO2 etchants. The reaction of these molecules with SiO2 generated an ammonium hexafluorosilicate ((NH4)2SiF6) product on the Si surface which was liberated at a temperature above 70°C, leaving the hydrogen terminated surface. The application of this method to actual contact holes demonstrated successful removal of the Si native oxide grown on the Si surface at the hole bottom.

  11. Preparation and Characterization of Ophthalmic Lens Materials Containing Titanium Silicon Oxide and Silver Nanoparticles.

    PubMed

    No, Jung-Won; Kim, Dong-Hyun; Lee, Min-Jae; Kim, Duck-Hyun; Kim, Tae-Hun; Sung, A-Young

    2015-10-01

    Hydrogel ophthalmic lenses containing fluorine-substituted aniline group, titanium silicon oxide nartoparticles, and silver nanoparticles were copolymerized, and the physical and optical properties of the hydrogel lenses were measured. To produce the hydrophilic ophthalmic lenses, the additives were added to the mixture containing HEMA, NVP, MA, EGDMA, and AIBN. The cast mold method was used for the manufacture of the hydrogel ophthalmic lenses, and the produced lenses were completely soaked in a 0.9% NaCl normal saline solution for 24 hours for hydration. The physical properties of the produced macromolecule showed that the water content was 32.5-37.6%, the refractive index was 1.450-1.464, the UV-B transmittance was 0.5-35.2%, and the contact angle was between 56 and 69. Also, the addition of aniline, titanium silicon oxide, and silver nanoparticles allowed the ophthalmic lenses to block UV. These results show that the produced macromolecule can be used as hydrophilic lenses for ophthalmologic purposes that can block UV. PMID:26726456

  12. Inkjet printing as a tool for the patterned deposition of octadecylsiloxane monolayers on silicon oxide surfaces.

    PubMed

    Belgardt, Christian; Sowade, Enrico; Blaudeck, Thomas; Baumgärtel, Thomas; Graaf, Harald; von Borczyskowski, Christian; Baumann, Reinhard R

    2013-05-28

    We present a case study about inkjet printing as a tool for molecular patterning of silicon oxide surfaces with hydrophobic functionality, mediated by n-octadecyltrichlorosilane (OTS) molecules. In contrast to state-of-the-art techniques such as micro contact printing or chemical immersion with subsequent lithography processes, piezo drop-on-demand inkjet printing does not depend on physical masters, which allows an effective direct-write patterning of rigid or flexible substrates and enables short run-lengths of the individual pattern. In this paper, we used mesithylene-based OTS inks, jetted them in droplets of 10 pL on a silicon oxide surface, evaluated the water contact angle of the patterned areas and fitted the results with Cassie's law. For inks of 2.0 mM OTS concentration, we found that effective area coverages of 38% can be obtained. Our results hence show that contact times of the order of hundred milliseconds are sufficient to form a pattern of regions with OTS molecules adsorbed to the surface, representing at least a fragmented, inhomogeneous self-assembled OTS monolayer (OTS-SAM). PMID:23417102

  13. Silicon carbide: A unique platform for metal-oxide-semiconductor physics

    NASA Astrophysics Data System (ADS)

    Liu, Gang; Tuttle, Blair R.; Dhar, Sarit

    2015-06-01

    A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO2/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

  14. Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide

    NASA Astrophysics Data System (ADS)

    Shen, Xinmin; Tu, Qunzhang; Deng, Hui; Jiang, Guoliang; He, Xiaohui; Liu, Bin; Yamamura, Kazuya

    2016-04-01

    For effective machining of difficult-to-machine materials, such as reaction-sintered silicon carbide (RS-SiC) and single-crystal 4H silicon carbide (4H-SiC), a novel polishing technique named anodic oxidation polishing was proposed, which combined with the anodic oxidation of substrate and slurry polishing of oxide. By scanning electron microscopy/energy-dispersive X-ray spectroscopy (SEM-EDX) observation and atomic force microscopy analysis, both the anodic oxidation behaviors of RS-SiC and 4H-SiC were investigated. Through comparison of the surfaces before and after hydrofluoric acid etching of the oxidized samples by the scanning white light interferometry (SWLI) measurement, the relationships between oxidation depth and oxidation time were obtained, and the calculated oxidation rate for RS-SiC was 5.3 nm/s and that for 4H-SiC was 5.8 nm/s based on the linear Deal-Grove model. Through anodic oxidation polishing of RS-SiC substrate and 4H-SiC substrate, respectively, the surface roughness rms obtained by SWLI was improved to 2.103 nm for RS-SiC and to 0.892 nm for 4H-SiC. Experimental results indicate that anodic oxidation polishing is an effective method for the machining of RS-SiC and 4H-SiC samples, which would improve the process level of SiC substrates and promote the application of SiC products in the fields of optics, ceramics, semiconductors, electronics, and so on.

  15. An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process

    NASA Astrophysics Data System (ADS)

    Nagase, Takeshi; Yamashita, Ryo; Yabuuchi, Atsushi; Lee, Jung-Goo

    2015-11-01

    A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiOx) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface.

  16. Homogeneity of bismuth-distribution in bismuth-doped alkali germanate laser glasses towards superbroad fiber amplifiers.

    PubMed

    Zhao, Yanqi; Wondraczek, Lothar; Mermet, Alain; Peng, Mingying; Zhang, Qinyuan; Qiu, Jianrong

    2015-05-01

    Compared to rare-earth doped glasses, bismuth-doped glasses hold promise for super-broadband near-infrared (NIR) photoemission and potential applications in optical amplification. However, optically active bismuth centers are extremely sensitive to the properties of the surrounding matrix, and also to processing conditions. This is strongly complicating the exploitation of this class of materials, because functional devices require a very delicate adjustment of the redox state of the bismuth species, and its distribution throughout the bulk of the material. It also largely limits some of the conventional processing routes for glass fiber, which start from gas phase deposition and may require very high processing temperature. Here, we investigate the influence of melting time and alkali addition on bismuth-related NIR photoluminescence from melt-derived germanate glasses. We show that the effect of melting time on bismuth-related absorption and NIR photoemission is primarily through bismuth volatilization. Adding alkali oxides as fluxing agents, the melt viscosity can be lowered to reduce either the glass melting temperature, or the melting time, or both. At the same time, however, alkali addition also leads to increasing mean-field basicity, what may reduce the intensity of bismuth-related NIR emission. Preferentially using Li2O over Na2O or K2O presents the best trade-off between those above factors, because its local effect may be adverse to the generally assumed trend of the negative influence of more basic matrix composition. This observation provides an important guideline for the design of melt-derived Bi-doped glasses with efficient NIR photoemission and high optical homogeneity. PMID:25969328

  17. Ultrasmooth reaction-sintered silicon carbide surface resulting from combination of thermal oxidation and ceria slurry polishing.

    PubMed

    Shen, Xinmin; Dai, Yifan; Deng, Hui; Guan, Chaoliang; Yamamura, Kazuya

    2013-06-17

    An ultrasmooth reaction-sintered silicon carbide surface with an rms roughness of 0.424 nm is obtained after thermal oxidation for 30 min followed by ceria slurry polishing for 30 min. By SEM-EDX analysis, we investigated the thermal oxidation behavior of RS-SiC, in which the main components are Si and SiC. As the oxidation rate is higher in the area with defects, there are no scratches or cracks on the surface after oxidation. However, a bumpy structure is formed after oxidation because the oxidation rates of Si and SiC differ. Through a theoretical analysis of thermal oxidation using the Deal-Grove model and the removal of the oxide layer by ceria slurry polishing in accordance with the Preston equation, a model for obtaining an ultrasmooth surface is proposed and the optimal processing conditions are presented. PMID:23787665

  18. Thermodynamics Calculation and Experimental Study on Separation of Bismuth from a Bismuth Glance Concentrate Through a Low-Temperature Molten Salt Smelting Process

    NASA Astrophysics Data System (ADS)

    Yang, Jian-Guang; He, De-Wen; Tang, Chao-Bo; Chen, Yong-Ming; Sun, Ya-Hui; Tang, Mo-Tang

    2011-08-01

    The main purpose of this study is to characterize and separate bismuth from a bismuth glance concentrate through a low-temperature, sulfur-fixing smelting process. This article reports on a study conducted on the optimization of process parameters, such as Na2CO3 and zinc oxide wt pct in charging, smelting temperature, smelting duration on the bismuth yield, resultant crude bismuth grade, and sulfur-fixing rate. A maximum bismuth recovery of 97.31 pct, crude bismuth grade of 96.93 pct, and 98.23 pct sulfur-fixing rate are obtained when a charge (containing 63.50 wt pct of Na2CO3 and 22.50 wt pct of bismuth glance, as well as 5 pct in excess of the stoichiometric requirement of zinc oxide dosage) is smelted at 1000 K (727 °C) for 150 minutes. This smelting operation is free from atmospheric pollution because zinc oxide is used as the sulfur-fixing agent, which can capture sulfur from bismuth sulfide and form the more thermodynamic-stable compound, zinc sulfide. The solid residue is subjected to a mineral dressing operation to obtain suspension, which is filtered to produce a cake, representing the solid particles of zinc sulfide. Based on the results of the chemical content analysis of the as-resultant zinc sulfide, more than 93 pct zinc sulfide can be recovered, and the recovered zinc sulfide grade can reach 60.20 pct. This material can be sold as zinc sulfide concentrate or roasted to be regenerated as zinc oxide.

  19. Behavior of incorporated nitrogen in plasma-nitrided silicon oxide formed by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Shinoda, Nao; Itokawa, Hiroshi; Fujitsuka, Ryota; Sekine, Katsuyuki; Onoue, Seiji; Tonotani, Junichi

    2016-04-01

    The behavior of nitrogen (N) atoms in plasma-nitrided silicon oxide (SiO2) formed by chemical vapor deposition (CVD) was characterized by physical analysis and from electrical properties. The changes in the chemical bonding and distribution of N in plasma-nitrided SiO2 were investigated for different subsequent processes. N-Si3, N-Si2O, and N2 are formed in a SiO2 film by plasma nitridation. N2 molecules diffuse out during annealing at temperatures higher than 900 °C. NH species are generated from N2 molecules and H in the SiO2 film with subsequent oxide deposition using O3 as an oxidant. The capacitance-voltage (C-V) curves of metal-oxide-semiconductor (MOS) capacitors are obtained. The negative shift of the C-V curve is caused by the increase in the density of positive fix charge traps in CVD-SiO2 induced by plasma nitridation. The C-V curve of plasma-nitrided SiO2 subjected to annealing shifts to the positive direction and that subjected to the subsequent oxide deposition shifts markedly to the negative direction. It is clarified that the density of positive charge fixed traps in plasma-nitrided SiO2 films decrease because the amount of N2 molecules is decreased by annealing, and that the density of traps increases because NH species are generated and move to the interface between SiO2 and the Si substrate with the subsequent oxide deposition.

  20. Design, microstructure, and high-temperature behavior of silicon nitride sintered with rate-earth oxides

    SciTech Connect

    Ciniculk, M.K. . Dept. of Materials Science and Mineral Engineering)

    1991-08-01

    The processing-microstructure-property relations of silicon nitride ceramics sintered with rare-earth oxide additives have been investigated with the aim of improving their high-temperature behavior. The additions of the oxides of Y, Sm, Gd, Dy, Er, or Yb were compositionally controlled to tailor the intergranular phase. The resulting microstructure consisted of {beta}-Si{sub 3}N{sub 4} grains and a crystalline secondary phase of RE{sub 2}Si{sub 2}O{sub 7}, with a thin residual amorphous phase present at grain boundaries. The lanthanide oxides were found to be as effective as Y{sub 2}O{sub 3} in densifying Si{sub 3}N{sub 4}, resulting in identical microstructures. The crystallization behavior of all six disilicates was similar, characterized by a limited nucleation and rapid growth mechanism resulting in large single crystals. Complete crystallization of the intergranular phase was obtained with the exception of a residual amorphous, observed at interfaces and believed to be rich in impurities, the cause of incomplete devitrification. The low resistance to oxidation of these materials was attributed to the minimization of amorphous phases via devitrification to disilicates, compatible with SiO{sub 2}, the oxidation product of Si{sub 3}N{sub 4}. The strength retention of these materials at 1300{degrees}C was found to be between 80% and 91% of room-temperature strength, due to crystallization of the secondary phase and a residual but refractory amorphous grain-boundary phase. The creep behavior was found to be strongly dependent on residual amorphous phase viscosity as well as on the oxidation behavior, as evidenced by the nonsteady-state creep rates of all materials. 122 refs., 51 figs., 12 tabs.

  1. Facile synthesis of binder-free reduced graphene oxide/silicon anode for high-performance lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Zuo, Pengjian; Chen, Cheng; Ma, Yulin; Cheng, Xinqun; Du, Chunyu; Gao, Yunzhi; Yin, Geping

    2016-04-01

    A novel binder-free reduced graphene oxide/silicon (RGO/Si) composite anode has been fabricated by a facile doctor-blade coating method. The relatively low C/O ratio plays an important role for the fabrication of the bind-free multilayered RGO/Si electrode with silicon nanoparticles encapsulating among the RGO sheet layers. The RGO provides the electron transport pathway and prevents the electrode fracture caused by the volume changes of active silicon particles during cycling. The RGO/Si composite anode with a silicon content of 66.7% delivers a reversible capacity of 1931 mAh g-1 at 0.2 A g-1 and still remains 92% of the initial capacity after 50 cycles.

  2. High performance of graphene oxide-doped silicon oxide-based resistance random access memory.

    PubMed

    Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Shih, Chih-Cheng; Yang, Ya-Liang; Pan, Yin-Chih; Chu, Tian-Jian; Huang, Syuan-Yong; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Sze, Simon M

    2013-01-01

    In this letter, a double active layer (Zr:SiOx/C:SiOx) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiOx layer. Compared with single Zr:SiOx layer structure, Zr:SiOx/C:SiOx structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process. PMID:24261454

  3. High performance of graphene oxide-doped silicon oxide-based resistance random access memory

    PubMed Central

    2013-01-01

    In this letter, a double active layer (Zr:SiO x /C:SiO x ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO x layer. Compared with single Zr:SiO x layer structure, Zr:SiO x /C:SiO x structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process. PMID:24261454

  4. High performance of graphene oxide-doped silicon oxide-based resistance random access memory

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Shih, Chih-Cheng; Yang, Ya-Liang; Pan, Yin-Chih; Chu, Tian-Jian; Huang, Syuan-Yong; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Sze, Simon M.

    2013-11-01

    In this letter, a double active layer (Zr:SiO x /C:SiO x ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO x layer. Compared with single Zr:SiO x layer structure, Zr:SiO x /C:SiO x structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.

  5. Silicon nanowire oxidation: the influence of sidewall structure and gold distribution

    NASA Astrophysics Data System (ADS)

    Sivakov, V. A.; Scholz, R.; Syrowatka, F.; Falk, F.; Gösele, U.; Christiansen, S. H.

    2009-10-01

    The oxidation behavior of Si nanowires (SiNWs) grown by the gold (Au) catalyzed vapor-liquid-solid (VLS) growth process in an electron beam evaporation (EBE) reactor is studied. The VLS SiNWs exhibit hexagonal shape with essentially {112} facets where each facet shows a saw-tooth faceting itself, consisting of alternating {111} and {113} facets. Depending on growth temperatures (450-750 °C) and evaporation currents (40-80 mA) that determine the silicon vapor supply, this facet formation is more or less pronounced. The diffusion of Au atoms on the faceted SiNW surfaces and the formation of Au nanoparticles on the SiNW facets during growth and during ex situ annealing are studied. Upon diffusion, the Au atoms agglomerate and form Au nanoparticles that preferably arrange themselves on {113} facets. Upon annealing in air at temperatures between 800 and 950 °C the gold nanoparticles agglomerate further and form bigger particles of a few tens of nm in diameter that reside at the interface between the growing silica (SiO2) layer and the SiNW itself, which in turn shrinks during SiNW oxidation. The oxide layer thickness and the oxide appearance depend on the annealing conditions (time and temperature) and systematically varied oxidation processing is described in this paper as investigated by cross-sectional transmission electron microscopy (TEM) including high resolution studies as well as scanning electron microscopy (SEM) studies. Our results strongly suggest that the SiNWs can be fully oxidized, thus forming silica NWs that can either keep their initial shape or, under certain annealing conditions, do not keep their initial wire shape but assume a bamboo-like shape that forms most likely as a result of locally high stresses that are related to nanocrack formation. The nanocracks form in the growing oxide layer mediated by the presence of Au nanoparticles that yield gold-enhanced SiNW oxidation and thus a faster oxidation rate.

  6. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    SciTech Connect

    Hänninen, Tuomas Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  7. Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

    NASA Astrophysics Data System (ADS)

    Kao, Wei-Chieh

    Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

  8. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    NASA Astrophysics Data System (ADS)

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul; Hermle, Martin; Glunz, Stefan W.

    2015-11-01

    Passivated contacts (poly-Si/SiOx/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF2), the ion implantation dose (5 × 1014 cm-2 to 1 × 1016 cm-2), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iVoc) of 725 and 720 mV, respectively. For p-type passivated contacts, BF2 implantations into intrinsic a-Si yield well passivated contacts and allow for iVoc of 690 mV, whereas implanted B gives poor passivation with iVoc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved Voc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with Voc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  9. Silicon rib waveguide electro-absorption optical modulator using transparent conductive oxide bilayer

    NASA Astrophysics Data System (ADS)

    Ayata, Masafumi; Nakano, Yoshiaki; Tanemura, Takuo

    2016-04-01

    We propose a novel ultra compact electro-absorption optical modulator based on a silicon rib waveguide and numerically demonstrate its performance. The proposed design employs two types of transparent conductive oxide (TCO) layers with different carrier densities to achieve both high modulation efficiency and low optical insertion loss. The thin TCO layer with high carrier density enables efficient modulation through the metal-oxide-semiconductor structure. On the other hand, the upper TCO layer with low carrier density allows low-resistance electrical contact for the top electrode without large optical loss. Using an indium tin oxide bilayer with optimized carrier densities, we numerically demonstrate a 4.3 dB extinction ratio and a 2.6 dB optical insertion loss with 1 µm device length. We estimate that the modulator operates under a low driving voltage of 1.3 V, exhibiting an ultra low energy consumption of 22.5 fJ/bit and a broad RC modulation bandwidth of over 40 GHz.

  10. Silicon dioxide nanoparticles increase macrophage atherogenicity: Stimulation of cellular cytotoxicity, oxidative stress, and triglycerides accumulation.

    PubMed

    Petrick, Lauren; Rosenblat, Mira; Paland, Nicole; Aviram, Michael

    2016-06-01

    Nanoparticle research has focused on their toxicity in general, while increasing evidence points to additional specific adverse effects on atherosclerosis development. Arterial macrophage cholesterol and triglyceride (TG) accumulation and foam cell formation are the hallmark of early atherogenesis, leading to cardiovascular events. To investigate the in vitro atherogenic effects of silicon dioxide (SiO2 ), J774.1 cultured macrophages (murine cell line) were incubated with SiO2 nanoparticle (SP, d = 12 nm, 0-20 µg/mL), followed by cellular cytotoxicity, oxidative stress, TG and cholesterol metabolism analyses. A significant dose-dependent increase in oxidative stress (up to 164%), in cytotoxicity (up to 390% measured by lactate dehydrogenase (LDH) release), and in TG content (up to 63%) was observed in SiO2 exposed macrophages compared with control cells. A smaller increase in macrophage cholesterol mass (up to 22%) was noted. TG accumulation in macrophages was not due to a decrease in TG cell secretion or to an increased TG biosynthesis rate, but was the result of attenuated TG hydrolysis secondary to decreased lipase activity and both adipose triglyceride lipase (ATGL) and hormone-sensitive lipase (HSL) protein expression (by 42 and 25%, respectively). Overall, SPs showed pro-atherogenic effects on macrophages as observed by cytotoxicity, increased oxidative stress and TG accumulation. © 2014 Wiley Periodicals, Inc. Environ Toxicol 31: 713-723, 2016. PMID:25448404

  11. Hot-pressed silicon nitride with various lanthanide oxides as sintering additives

    NASA Technical Reports Server (NTRS)

    Ueno, K.; Toibana, Y.

    1984-01-01

    The effects of addition of various lanthanide oxides and their mixture with Y2O3 on the sintering of Si3N4 were investigated. The addition of simple and mixed lanthanide oxides promoted the densification of Si3N4 in hot-pressing at 1800 C under 300-400kg/ centimeters squared for 60 min. The crystallization of yttrium and lanthanide-silicon oxynitrides which was observed inn the sintered body containing yttrium-lanthanide mixed oxides as additives led to the formation of a highly refractory Si3N4 ceramic having a bending strength of 82 and 84 kg/millimeters squared at room temperature and 1300 C respectively. In a Y2O3+La2O3 system, a higher molar ratio of La2O3 to Y2O3 gave a higher hardness and strength at high temperatures. It was found that 90 min was an optimum sintering time for the highest strength.

  12. Hot-pressed silicon nitride with various lanthanide oxides as sintering additives

    SciTech Connect

    Ueno, K.; Toibana, Y.

    1984-04-01

    The effects of addition of various lanthanide oxides and their mixture with Y2O3 on the sintering of Si3N4 were investigated. The addition of simple and mixed lanthanide oxides promoted the densification of Si3N4 in hot-pressing at 1800 C under 300-400kg/ centimeters squared for 60 min. The crystallization of yttrium and lanthanide-silicon oxynitrides which was observed inn the sintered body containing yttrium-lanthanide mixed oxides as additives led to the formation of a highly refractory Si3N4 ceramic having a bending strength of 82 and 84 kg/millimeters squared at room temperature and 1300 C respectively. In a Y2O3+La2O3 system, a higher molar ratio of La2O3 to Y2O3 gave a higher hardness and strength at high temperatures. It was found that 90 min was an optimum sintering time for the highest strength.

  13. Biosynthesis of silicon-germanium oxide nanocomposites by the marine diatom Nitzschia frustulum.

    PubMed

    Rorrer, Gregory L; Chang, Chih-Hung; Liu, Shu-Hong; Jeffryes, Clayton; Jiao, Jun; Hedberg, James A

    2005-01-01

    The biomineralization capacity of the photosynthetic marine diatom Nitzschia frustulum was harnessed to fabricate Si-Ge oxide nanocomposite materials. Germanium was incorporated into the diatom cell by a two-stage cultivation process. In stage 1, the N. frustulum cell suspension was grown up to cell density of 3 x 10(6) cells/mL in 0.35 mM silicic acid within a bubble-column photobioreactor. In stage 2, when all of the soluble silicon was consumed, 0.10 mM Ge(OH)4 or a mixture of 0.020 mM Ge(OH)4 and 0.25 mM Si(OH)4 were added to Si-starved cells. The cells assimilated soluble germanium by a surge uptake mechanism. The cell mass was thermally annealed in air at 800 degrees C for 6 h to oxidize carbonaceous materials. The thermally annealed cell biomass was characterized by TEM-EDS, FT-IR, and XRD. These measurements confirmed the formation nanostructured Ge-Si oxides composed of CaSiO3 and Ca3GeO5. PMID:15762159

  14. Missing dimer defects investigated by adsorption of nitric oxide (NO) on silicon (100) 2 × 1

    NASA Astrophysics Data System (ADS)

    Sasse, A. G. B. M.; Kleinherenbrink, P. M.; Van Silfhout, A.

    This paper describes a study concerning the interaction of nitric oxide (NO) with the clean Si(100)2×1 surface in ultra-high vacuum at room temperature. Differential reflectometry (DR) in the photon energy range of 2.4-4.4 eV. Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) have been used to investigate the chemisorption of NO on Si(100)2×1. With this combination of techniques it is possible to make an analysis of the geometric and electronic structure and chemical composition of the surface layer. The aim of the present study was to explain the experimental results of the adsorption of NO on the clean Si(100)2×1 at 300 K. Analysing the electronic and geometric structure of a simplified stepped 2×1 reconstructed Si(100) surface and of the NO molecule in combination with the use of Woodward-Hoffmann rules (WHR) we were able to model a surface defect specific adsorption mechanism. Surface defects such as missing dimer defects seem to play an important role in the adsorption mechanism of NO on the silicon surface. The experimental results are consistent with this developed model. We also suggest a relation between the missing dimer defects and the number of steps on the silicon surface.

  15. Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

    SciTech Connect

    Allen, T. G. Cuevas, A.

    2014-07-21

    This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1 cm/s have been recorded with films less than 4.5 nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2 Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5 eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9 eV.

  16. Characteristics of Light Emission Lifetime of Electroluminescent Phosphor Encapsulated by Titanium-Silicon-Oxide Film

    NASA Astrophysics Data System (ADS)

    Sawada, Masato; Oobayashi, Shigeru; Yamaguchi, Kenichi; Takemura, Hirofumi; Nakamura, Mitsuo; Momose, Kenichiro; Saka, Hiroyasu

    2002-06-01

    To improve the light emission lifetime of electroluminescent ZnS:Cu, Cl phosphor, the surface of the phosphor was coated with titanium-silicon-oxide (TSO) film that was deposited by chemical vapor deposition using a mixture of titanium tetrachloride (TiCl4) and silicon tetrachloride (SiCl4) vapors, and water vapor. By adding SiCl4 during the hydrolysis of TiCl4, the amount of Cl contained in the encapsulating film, which might induce the deterioration of the luminance of the phosphor, was reduced, and encapsulated phosphors with good luminescence characteristics, such as high luminance and long lifetime, were obtained. When the ratio of Si to Ti (Si/Ti) in the TSO film was 0.97, the phosphor encapsulated by the TSO film had the highest luminance and the longest lifetime; the initial luminance and the half-life of the luminance were 95.8 cd/m2 and 500 h or longer, respectively, when the encapsulated phosphor was operated at 40°C, 90% humidity, 100 V and 400 Hz. The luminescence lifetime of the encapsulated phosphors was approximately 25 times longer than that of nonencapsulated phosphors.

  17. Light-induced water oxidation at silicon electrodes functionalized with a cobalt oxygen-evolving catalyst

    PubMed Central

    Pijpers, Joep J. H.; Winkler, Mark T.; Surendranath, Yogesh; Buonassisi, Tonio; Nocera, Daniel G.

    2011-01-01

    Integrating a silicon solar cell with a recently developed cobalt-based water-splitting catalyst (Co-Pi) yields a robust, monolithic, photo-assisted anode for the solar fuels process of water splitting to O2 at neutral pH. Deposition of the Co-Pi catalyst on the Indium Tin Oxide (ITO)-passivated p-side of a np-Si junction enables the majority of the voltage generated by the solar cell to be utilized for driving the water-splitting reaction. Operation under neutral pH conditions fosters enhanced stability of the anode as compared to operation under alkaline conditions (pH 14) for which long-term stability is much more problematic. This demonstration of a simple, robust construct for photo-assisted water splitting is an important step towards the development of inexpensive direct solar-to-fuel energy conversion technologies. PMID:21646536

  18. Paralinear Oxidation of Silicon Nitride in a Water Vapor/Oxygen Environment

    NASA Technical Reports Server (NTRS)

    Fox, Dennis S.; Opila, Elizabeth J.; Nguyen, QuynhGiao; Humphrey, Donald L.; Lewton, Susan M.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Three silicon nitride materials were exposed to dry oxygen flowing at 0.44 cm/s at temperatures between 1200 and 1400 C. Reaction kinetics were measured with a continuously recording microbalance. Parabolic kinetics were observed. When the same materials were exposed to a 50% H2O - 50% O2 gas mixture flowing at 4.4 cm/s, all three types exhibited paralinear kinetics. The material is oxidized by water vapor to form solid silica. The protective silica is in turn volatilized by water vapor to form primarily gaseous Si(OH)4. Nonlinear least squares analysis and a paralinear kinetic model were used to determine both parabolic and linear rate constants from the kinetic data. Volatilization of the protective silica scale can result in accelerated consumption of Si3N4. Recession rates under conditions more representative of actual combustors are compared to the furnace data.

  19. The Effects of Polishing Damage and Oxygen Concentration on Gate Oxide Integrity in Silicon Crystals

    NASA Astrophysics Data System (ADS)

    Abe, Takao; Kato, Yuichi

    1993-05-01

    The gate oxide integrity (GOI) of FZ crystals is independent but the GOI of CZ crystals is strongly dependent on the polishing conditions which means whether mechanical or chemical components are dominant. The GOI of CZ crystals is clearly improved by etching of surface layers, that is, 0.5 μm in depth by mixed acid and 0.04 μm by NH4OH/H2O2 solution. MCZ crystals with low concentration of oxygen (˜10 ppma) always show higher GOI yields than CZ crystals with high concentration of oxygen (˜18 ppma). The above etching effects suggest that the polishing damages existing in as polished surfaces cause the GOI degradations together with the oxygen atoms in silicon crystals.

  20. The formation of light emitting cerium silicates in cerium-doped silicon oxides

    SciTech Connect

    Li Jing; Zalloum, Othman; Roschuk, Tyler; Heng Chenglin; Wojcik, Jacek; Mascher, Peter

    2009-01-05

    Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N{sub 2} at 1200 deg. C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce{sub 2}Si{sub 2}O{sub 7} or Ce{sub 4.667} (SiO{sub 4}){sub 3}O], the presence of which was confirmed by high resolution transmission electron microscopy.

  1. Patterns of discoloration and oxidation by direct and scattered fluxes on LDEF, including oxygen on silicon

    NASA Technical Reports Server (NTRS)

    Frederickson, A. R.; Filz, R. C.; Rich, F. J.; Sagalyn, P. L.

    1992-01-01

    A number of interesting discoloration patterns are clearly evident on MOOO2-1 which resides on the three faces of the Long Duration Exposure Facility (LDEF). Most interesting is the pattern of blue oxidation on polished single crystal silicon apparently produced by scattered or direct ram oxygen atoms along the earth face. A complete explanation for the patterns has not yet been obtained. All honeycomb outgassing holes have a small discoloration ring around them that varies in color. The shadow cast by a suspended wire on the earth face surface is not easily explained by either solar photons or by ram flux. The shadows and the dark/light regions cannot be explained consistently by the process of solar ultraviolet paint-darkening modulated by ram flux oxygen bleaching of the paint.

  2. Synthesis of magnetite-silica core-shell nanoparticles via direct silicon oxidation.

    PubMed

    Wang, Shuxian; Tang, Jing; Zhao, Hongfu; Wan, Jiaqi; Chen, Kezheng

    2014-10-15

    Magnetite-silica core-shell nanoparticles (Fe3O4@SiO2 NPs) were prepared from silicon powder by direct oxidation without using any expensive precursors (such as TEOS) and organic solvents. The as-prepared Fe3O4@SiO2 NPs were characterized by TEM, DLS, XRD, FT-IR, zeta potential and NMR Analyzer. The results show that the Fe3O4@SiO2 NPs are monodispersed core-shell nanostructures with single cores that were uniformly coated by silica shells. The relaxation property indicates that Fe3O4@SiO2 NPs have desirable characteristics for T2 MRI contrast agents. This facile and green method is promising for large-scale production, which would open new opportunities for preparing core-shell nanostructures for biomedical applications. PMID:25072518

  3. Scattering strength of the scatterer inducing variability in graphene on silicon oxide.

    PubMed

    Katoch, Jyoti; Le, Duy; Singh, Simranjeet; Rao, Rahul; Rahman, Talat S; Ishigami, Masa

    2016-03-23

    Large variability of carrier mobility of graphene-based field effect transistors hampers graphene science and technology. We show that the number of the scatterer responsible for the observed variability on graphene devices on silicon oxide can be determined by finding the number of hydrogen that can be chemisorbed on graphene. We use the relationship between the number of the scatterer and the mobility of graphene devices to determine that the variability-inducing scatterer possesses scattering strength 10 times smaller than that of adsorbed potassium atoms and 50 times smaller than that of ion-beam induced vacancies. Our results provide an important, quantitative input towards determining the origin of the variability. PMID:26902181

  4. Amorphous silicon waveguides grown by PECVD on an Indium Tin Oxide buried contact

    NASA Astrophysics Data System (ADS)

    Rao, Sandro; Della Corte, Francesco G.; Summonte, Caterina

    2012-06-01

    Low-loss hydrogenated amorphous silicon (α-Si:H) waveguides were realized by plasma enhanced chemical vapour deposition (PECVD) on a transparent conductive oxide (TCO) layer which is intended to provide the buried contact in active devices, e.g. switches and modulators. In particular we propose a technological solution to overcome both the strong reduction in optical transmittance due to the very high extinction coefficient of metal contacts and, at the same time, the optical scattering induced by the texturization effect induced in α-Si:H films grown on TCO. The realized waveguides were characterized in terms of propagation losses at 1550 nm and surface roughness. The experimental performances have been compared to those obtained through calculations using an optical simulation package. The results are found to be in agreement with the experimental data.

  5. Acoustic Properties of Polyurethane Composition Reinforced with Carbon Nanotubes and Silicon Oxide Nano-powder

    NASA Astrophysics Data System (ADS)

    Orfali, Wasim A.

    This article demonstrates the acoustic properties of added small amount of carbon-nanotube and siliconoxide nano powder (S-type, P-Type) to the host material polyurethane composition. By adding CNT and/or nano-silica in the form of powder at different concentrations up to 2% within the PU composition to improve the sound absorption were investigated in the frequency range up to 1600 Hz. Sound transmission loss measurement of the samples were determined using large impedance tube. The tests showed that addition of 0.2 wt.% Silicon Oxide Nano-powder and 0.35 wt.% carbon nanotube to polyurethane composition improved sound transmissions loss (Sound Absorption) up to 80 dB than that of pure polyurethane foam sample.

  6. Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxides

    SciTech Connect

    Young, David L.; Nemeth, William; Grover, Sachit; Norman, Andrew; Yuan, Hao-Chih; Lee, Benjamin G.; LaSalvia, Vincenzo; Stradins, Paul

    2014-01-01

    We describe the design, fabrication and results of passivated contacts to n-type silicon utilizing thin SiO2 and transparent conducting oxide layers. High temperature silicon dioxide is grown on both surfaces of an n-type wafer to a thickness <50 Å, followed by deposition of tin-doped indium oxide (ITO) and a patterned metal contacting layer. As deposited, the thin-film stack has a very high J0,contact, and a non-ohmic, high contact resistance. However, after a forming gas anneal, the passivation quality and the contact resistivity improve significantly. The contacts are characterized by measuring the recombination parameter of the contact (J0,contact) and the specific contact resistivity (ρcontact) using a TLM pattern. The best ITO/SiO2 passivated contact in this study has J0,contact = 92.5 fA/cm2 and ρcontact = 11.5 mOhm-cm2. These values are placed in context with other passivating contacts using an analysis that determines the ultimate efficiency and the optimal area fraction for contacts for a given set of (J0,contact, ρcontact) values. The ITO/SiO2 contacts are found to have a higher J0,contact, but a similar ρcontact compared to the best reported passivated contacts.

  7. Oxidized Porous Silicon Particles Covalently Grafted with Daunorubicin as a Sustained Intraocular Drug Delivery System

    PubMed Central

    Chhablani, Jay; Nieto, Alejandra; Hou, Huiyuan; Wu, Elizabeth C.; Freeman, William R.; Sailor, Michael J.; Cheng, Lingyun

    2013-01-01

    Purpose. To test the feasibility of covalent loading of daunorubicin into oxidized porous silicon (OPS) and to evaluate the ocular properties of sustained delivery of daunorubicin in this system. Methods. Porous silicon was heat oxidized and chemically functionalized so that the functional linker on the surface was covalently bonded with daunorubicin. The drug loading rate was determined by thermogravimetric analysis. Release of daunorubicin was confirmed in PBS and excised rabbit vitreous by mass spectrometry. Daunorubicin-loaded OPS particles (3 mg) were intravitreally injected into six rabbits, and ocular properties were evaluated through ophthalmic examinations and histology during a 3-month study. The same OPS was loaded with daunorubicin using physical adsorption and was evaluated similarly as a control for the covalent loading. Results. In the case of covalent loading, 67 ± 10 μg daunorubicin was loaded into each milligram of the particles while 27 ± 10 μg/mg particles were loaded by physical adsorption. Rapid release of daunorubicin was observed in both PBS and excised vitreous (∼75% and ∼18%) from the physical adsorption loading, while less than 1% was released from the covalently loaded particles. Following intravitreal injection, the covalently loaded particles demonstrated a sustained degradation of OPS with drug release for 3 months without evidence of toxicity; physical adsorption loading revealed a complete release within 2 weeks and localized retinal toxicity due to high daunorubicin concentration. Conclusions. OPS with covalently loaded daunorubicin demonstrated sustained intravitreal drug release without ocular toxicity, which may be useful to inhibit unwanted intraocular proliferation. PMID:23322571

  8. Comparative cytotoxicity and genotoxicity of cobalt (II, III) oxide, iron (III) oxide, silicon dioxide, and aluminum oxide nanoparticles on human lymphocytes in vitro.

    PubMed

    Rajiv, S; Jerobin, J; Saranya, V; Nainawat, M; Sharma, A; Makwana, P; Gayathri, C; Bharath, L; Singh, M; Kumar, M; Mukherjee, A; Chandrasekaran, N

    2016-02-01

    Despite the extensive use of nanoparticles (NPs) in various fields, adequate knowledge of human health risk and potential toxicity is still lacking. The human lymphocytes play a major role in the immune system, and it can alter the antioxidant level when exposed to NPs. Identification of the hazardous NPs was done using in vitro toxicity tests and this study mainly focuses on the comparative in vitro cytotoxicity and genotoxicity of four different NPs including cobalt (II, III) oxide (Co3O4), iron (III) oxide (Fe2O3), silicon dioxide (SiO2), and aluminum oxide (Al2O3) on human lymphocytes. The Co3O4 NPs showed decrease in cellular viability and increase in cell membrane damage followed by Fe2O3, SiO2, and Al2O3 NPs in a dose-dependent manner after 24 h of exposure to human lymphocytes. The oxidative stress was evidenced in human lymphocytes by the induction of reactive oxygen species, lipid peroxidation, and depletion of catalase, reduced glutathione, and superoxide dismutase. The Al2O3 NPs showed the least DNA damage when compared with all the other NPs. Chromosomal aberration was observed at 100 µg/ml when exposed to Co3O4 NPs and Fe2O3 NPs. The alteration in the level of antioxidant caused DNA damage and chromosomal aberration in human lymphocytes. PMID:25829403

  9. Plasma surface oxidation of 316L stainless steel for improving adhesion strength of silicone rubber coating to metal substrate

    NASA Astrophysics Data System (ADS)

    Latifi, Afrooz; Imani, Mohammad; Khorasani, Mohammad Taghi; Daliri Joupari, Morteza

    2014-11-01

    Stainless steel 316L is one of the most widely used materials for fabricating of biomedical devices hence, improving its surface properties is still of great interest and challenging in biomaterial sciences. Plasma oxidation, in comparison to the conventional chemical or mechanical methods, is one of the most efficient methods recently used for surface treatment of biomaterials. Here, stainless steel specimens were surface oxidized by radio-frequency plasma irradiation operating at 34 MHz under pure oxygen atmosphere. Surface chemical composition of the samples was significantly changed after plasma oxidation by appearance of the chromium and iron oxides on the plasma-oxidized surface. A wettable surface, possessing high surface energy (83.19 mN m-1), was observed after plasma oxidation. Upon completion of the surface modification process, silicone rubber was spray coated on the plasma-treated stainless steel surface. Morphology of the silicone rubber coating was investigated by scanning electron microscopy (SEM). A uniform coating was formed on the oxidized surface with no delamination at polymer-metal interface. Pull-off tests showed the lowest adhesion strength of coating to substrate (0.12 MPa) for untreated specimens and the highest (0.89 MPa) for plasma-oxidized ones.

  10. Corrosion of ODS steels in lead bismuth eutectic

    NASA Astrophysics Data System (ADS)

    Hosemann, P.; Thau, H. T.; Johnson, A. L.; Maloy, S. A.; Li, N.

    2008-02-01

    Oxide dispersion strengthened (ODS) ferritic steels are advanced materials being developed for high temperature applications. Their properties (high temperature strength, creep resistance, corrosion/oxidation resistance) make them potentially usable for high temperature applications in liquid metal cooled systems like liquid lead-bismuth eutectic cooled reactors and spallation sources. Corrosion tests on five different ODS alloys were performed in flowing liquid lead-bismuth eutectic in the DELTA Loop at the Los Alamos National Laboratory at 535 C for 200 h and 600 h. The tested materials were chromium alloyed ferritic/martensitic steels (12YWT, 14YWT, MA957) and Cr-Al alloyed steels (PM2000, MA956). It was shown that the Al alloyed ODS steel above 5.5 wt% Al (PM2000) is highly resistant to corrosion and oxidation in the conditions examined, and that the corrosion properties of the ODS steels depend strongly on their grain size.

  11. Corrosion by liquid lead and lead-bismuth: experimental results review and analysis

    SciTech Connect

    Zhang, Jinsuo

    2008-01-01

    Liquid metal technologies for liquid lead and lead-bismuth alloy are under wide investigation and development for advanced nuclear energy systems and waste transmutation systems. Material corrosion is one of the main issues studied a lot recently in the development of the liquid metal technology. This study reviews corrosion by liquid lead and lead bismuth, including the corrosion mechanisms, corrosion inhibitor and the formation of the protective oxide layer. The available experimental data are analyzed by using a corrosion model in which the oxidation and scale removal are coupled. Based on the model, long-term behaviors of steels in liquid lead and lead-bismuth are predictable. This report provides information for the selection of structural materials for typical nuclear reactor coolant systems when selecting liquid lead or lead bismuth as heat transfer media.

  12. Continuous-flow Mass Production of Silicon Nanowires via Substrate-Enhanced Metal-Catalyzed Electroless Etching of Silicon with Dissolved Oxygen as an Oxidant

    PubMed Central

    Hu, Ya; Peng, Kui-Qing; Liu, Lin; Qiao, Zhen; Huang, Xing; Wu, Xiao-Ling; Meng, Xiang-Min; Lee, Shuit-Tong

    2014-01-01

    Silicon nanowires (SiNWs) are attracting growing interest due to their unique properties and promising applications in photovoltaic devices, thermoelectric devices, lithium-ion batteries, and biotechnology. Low-cost mass production of SiNWs is essential for SiNWs-based nanotechnology commercialization. However, economic, controlled large-scale production of SiNWs remains challenging and rarely attainable. Here, we demonstrate a facile strategy capable of low-cost, continuous-flow mass production of SiNWs on an industrial scale. The strategy relies on substrate-enhanced metal-catalyzed electroless etching (MCEE) of silicon using dissolved oxygen in aqueous hydrofluoric acid (HF) solution as an oxidant. The distinct advantages of this novel MCEE approach, such as simplicity, scalability and flexibility, make it an attractive alternative to conventional MCEE methods. PMID:24413157

  13. Continuous-flow mass production of silicon nanowires via substrate-enhanced metal-catalyzed electroless etching of silicon with dissolved oxygen as an oxidant.

    PubMed

    Hu, Ya; Peng, Kui-Qing; Liu, Lin; Qiao, Zhen; Huang, Xing; Wu, Xiao-Ling; Meng, Xiang-Min; Lee, Shuit-Tong

    2014-01-01

    Silicon nanowires (SiNWs) are attracting growing interest due to their unique properties and promising applications in photovoltaic devices, thermoelectric devices, lithium-ion batteries, and biotechnology. Low-cost mass production of SiNWs is essential for SiNWs-based nanotechnology commercialization. However, economic, controlled large-scale production of SiNWs remains challenging and rarely attainable. Here, we demonstrate a facile strategy capable of low-cost, continuous-flow mass production of SiNWs on an industrial scale. The strategy relies on substrate-enhanced metal-catalyzed electroless etching (MCEE) of silicon using dissolved oxygen in aqueous hydrofluoric acid (HF) solution as an oxidant. The distinct advantages of this novel MCEE approach, such as simplicity, scalability and flexibility, make it an attractive alternative to conventional MCEE methods. PMID:24413157

  14. Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2)

    SciTech Connect

    Liebhaber, M.; Mews, M.; Schulze, T. F.; Korte, L. Rech, B.; Lips, K.

    2015-01-19

    The heterojunction between amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2) and crystalline silicon (c-Si) is investigated. We combine chemical vapor deposition with in-system photoelectron spectroscopy in order to determine the valence band offset ΔE{sub V} and the interface defect density, being technologically important junction parameters. ΔE{sub V} increases from ≈0.3 eV for the a-Si:H/c-Si interface to >4 eV for the a-SiO{sub 2}/c-Si interface, while the electronic quality of the heterointerface deteriorates. High-bandgap a-SiO{sub x}:H is therefore unsuitable for the hole contact in heterojunction solar cells, due to electronic transport hindrance resulting from the large ΔE{sub V}. Our method is readily applicable to other heterojunctions.

  15. Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation

    NASA Astrophysics Data System (ADS)

    Carroll, M. S.; Chang, C.-L.; Sturm, J. C.; Büyüklimanli, T.

    1998-12-01

    In this letter, we show the ability, through introduction of a thin Si1-x-yGexCy layer, to eliminate the enhancement of enhanced boron diffusion in silicon due to an oxidizing surface or ion implant damage. This reduction of diffusion is accomplished through a low-temperature-grown thin epitaxial Si1-x-yGexCy layer which completely filters out excess interstitials introduced by oxidation or ion implant damage. We also quantify the oxidation-enhanced diffusion (OED) and transient-enhanced diffusion (TED) dependence on substitutional carbon level, and further report both the observation of carbon TED and OED, and its dependence on carbon levels.

  16. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide-selective functionalization of Si3N4 and SiO2.

    PubMed

    Liu, Li-Hong; Michalak, David J; Chopra, Tatiana P; Pujari, Sidharam P; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D; Zuilhof, Han; Chabal, Yves J

    2016-03-01

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface). PMID:26870908

  17. Size control, quantum confinement, and oxidation kinetics of silicon nanocrystals synthesized at a high rate by expanding thermal plasma

    SciTech Connect

    Han, Lihao E-mail: A.H.M.Smets@tudelft.nl; Zeman, Miro; Smets, Arno H. M. E-mail: A.H.M.Smets@tudelft.nl

    2015-05-25

    The growth mechanism of silicon nanocrystals (Si NCs) synthesized at a high rate by means of expanding thermal plasma chemical vapor deposition technique are studied in this letter. A bimodal Gaussian size distribution is revealed from the high-resolution transmission electron microscopy images, and routes to reduce the unwanted large Si NCs are discussed. Photoluminescence and Raman spectroscopies are employed to study the size-dependent quantum confinement effect, from which the average diameters of the small Si NCs are determined. The surface oxidation kinetics of Si NCs are studied using Fourier transform infrared spectroscopy and the importance of post-deposition passivation treatments of hydrogenated crystalline silicon surfaces are demonstrated.

  18. Mineral resource of the month: bismuth

    USGS Publications Warehouse

    Carlin, James F.

    2006-01-01

    Bismuth compounds are most known for their soothing effects on the stomach, wounds and sores. These properties make the compounds an essential part of many medicinal and cosmetic preparations, which until 1930 accounted for about 90 percent of the bismuth used. The subsequent development of low-melting alloys and chemical catalysts containing bismuth, as well as its use as an additive to casting alloys, has resulted in a wider variety of industrial applications for bismuth.

  19. Boosting the local anodic oxidation of silicon through carbon nanofiber atomic force microscopy probes

    PubMed Central

    Lorenzoni, Matteo; Matsui, Soichiro; Tanemura, Masaki; Perez-Murano, Francesc

    2015-01-01

    Summary Many nanofabrication methods based on scanning probe microscopy have been developed during the last decades. Local anodic oxidation (LAO) is one of such methods: Upon application of an electric field between tip and surface under ambient conditions, oxide patterning with nanometer-scale resolution can be performed with good control of dimensions and placement. LAO through the non-contact mode of atomic force microscopy (AFM) has proven to yield a better resolution and tip preservation than the contact mode and it can be effectively performed in the dynamic mode of AFM. The tip plays a crucial role for the LAO-AFM, because it regulates the minimum feature size and the electric field. For instance, the feasibility of carbon nanotube (CNT)-functionalized tips showed great promise for LAO-AFM, yet, the fabrication of CNT tips presents difficulties. Here, we explore the use of a carbon nanofiber (CNF) as the tip apex of AFM probes for the application of LAO on silicon substrates in the AFM amplitude modulation dynamic mode of operation. We show the good performance of CNF-AFM probes in terms of resolution and reproducibility, as well as demonstration that the CNF apex provides enhanced conditions in terms of field-induced, chemical process efficiency. PMID:25671165

  20. Oxidation behaviour of silicon-free tungsten alloys for use as the first wall material

    NASA Astrophysics Data System (ADS)

    Koch, F.; Brinkmann, J.; Lindig, S.; Mishra, T. P.; Linsmeier, Ch

    2011-12-01

    The use of self-passivating tungsten alloys as armour material of the first wall of a fusion power reactor may be advantageous concerning safety issues. In earlier studies good performance of the system W-Cr-Si was demonstrated. Thin films of such alloys showed a strongly reduced oxidation rate compared to pure tungsten. However, the formation of brittle tungsten silicides may be disadvantageous for the powder metallurgical production of bulk W-Cr-Si alloys if a good workability is needed. This paper shows the results of screening tests to identify suitable silicon-free alloys with distinguished self-passivation and a potentially good workability. Of all the tested systems W-Cr-Ti alloys showed the most promising results. The oxidation rate was even lower than the one of W-Cr-Si alloys, the reduction factor was about four orders of magnitude compared to pure tungsten. This performance could be conserved even if the content of alloying elements was reduced.

  1. Silicon carbide-reinforced alumina/metal composites by directed metal oxidation

    NASA Astrophysics Data System (ADS)

    Guermazi, Mohamed

    1997-12-01

    A new process, the DIMOXsp{TM} Process, for making ceramic matrix and metal matrix composites was developed and commercialized by Lanxide Corporation. This technology is based on the use of a unique directed-metal oxidation process to grow ceramic matrices around pre-placed composite fillers or reinforcements. This thesis attempts to offer a good understanding of the mechanism of the process, as well as the effects of the processing parameters on the process, especially in the presence of a reinforcing material. Metal-ceramic matrix composites were grown into four different SiC powders by the directed oxidation of aluminum alloys in air at various temperatures. Microstructure, microstructural evolution, and growth kinetic studies were performed on these composites as a function of alloy compositions, processing temperature, and preform size. The results are then compared to those of composites processed without SiC-reinforcing particles. The microstructure of the resulting composites consists of three phases: the SiC preform, a continuous alpha-Alsb2Osb3 matrix, and a network of unoxidized metal. The microstructural evolution for composites without SiC starts with an incubation period of variable length. The incubation time decreases with increase in the processing temperature and with increase in the alloy silicon content. The addition of silicon in the alloy decrease the viscosity of the melt and therefore increases the rate of metal supply to the reaction front. However increasing the magnesium content resulted only in a slight decrease of the length of the incubation period. For composites processed with SiC particles, the growth started immediately after introducing the alloy into the hot zone of the furnace. The incubation time was very short and was not sensitive to changes in either temperatures or alloy composition. The preform does not show any evidence of degradation by the molten alloy, however the growth front tends to climb up the surface of the particles. The composite growth rate increased with decreasing in the preform particle size. The oxidative formation of Alsb2Osb3 matrix composites using Al-Mg and Al-Mg-Si alloys exhibits a linear type of kinetics in both the presence and absence of SiC preforms with an activation energy of 224 kJ/mol.

  2. 21 CFR 73.2110 - Bismuth citrate.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2110 Bismuth citrate. (a) Identity. The color additive... restrictions. The color additive bismuth citrate may be safely used in cosmetics intended for coloring hair on the scalp, subject to the following restrictions: (1) The amount of bismuth citrate in the...

  3. 21 CFR 73.2110 - Bismuth citrate.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2110 Bismuth citrate. (a) Identity. The color additive... restrictions. The color additive bismuth citrate may be safely used in cosmetics intended for coloring hair on the scalp, subject to the following restrictions: (1) The amount of bismuth citrate in the...

  4. 21 CFR 73.2110 - Bismuth citrate.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2110 Bismuth citrate. (a) Identity. The color additive... restrictions. The color additive bismuth citrate may be safely used in cosmetics intended for coloring hair on the scalp, subject to the following restrictions: (1) The amount of bismuth citrate in the...

  5. 21 CFR 73.2162 - Bismuth oxychloride.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Bismuth oxychloride. 73.2162 Section 73.2162 Food... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2162 Bismuth oxychloride. (a) Identity and specifications. (1) The color additive bismuth oxychloride shall conform in identity and specifications to...

  6. 21 CFR 73.1162 - Bismuth oxychloride.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Bismuth oxychloride. 73.1162 Section 73.1162 Food... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1162 Bismuth oxychloride. (a) Identity. (1) The color additive bismuth oxychloride is a synthetically prepared white or nearly white amorphous or...

  7. 21 CFR 73.1162 - Bismuth oxychloride.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Bismuth oxychloride. 73.1162 Section 73.1162 Food... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1162 Bismuth oxychloride. (a) Identity. (1) The color additive bismuth oxychloride is a synthetically prepared white or nearly white amorphous or...

  8. 21 CFR 73.2162 - Bismuth oxychloride.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Bismuth oxychloride. 73.2162 Section 73.2162 Food... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2162 Bismuth oxychloride. (a) Identity and specifications. (1) The color additive bismuth oxychloride shall conform in identity and specifications to...

  9. Deactivation of titanium dioxide photocatalyst by oxidation of polydimethylsiloxane and silicon sealant off-gas in a recirculating batch reactor.

    PubMed

    Chemweno, Maurice K; Cernohlavek, Leemer G; Jacoby, William A

    2008-01-01

    We have studied deactivation of titanium dioxide (TiO2) photocatalyst by oxidation of polydimethylsiloxane and silicone sealant off-gas in a recirculating batch reactor. Polydimethylsiloxane vapor is a model indoor air pollutant. It does not adsorb strongly on TiO2 in the dark, but undergoes oxidation when the ultraviolet (UV) photons are also present. Commercial silicone (room-temperature vulcanizing) sealant off-gas is an actual indoor air pollutant subject to short-term spikes in concentration. It does adsorb on the TiO2 surface in the dark, but UV photons also catalyze its oxidation. The oxidation of the Si-containing vapors was monitored using a Fourier transform infrared spectroscope equipped with a gas cell. Subsequent to each incremental exposure, a hexane oxidation reaction was performed to track the titania catalyst's activity. The exposures were repeated until substantial deactivation was achieved. We have also documented the regenerative effect of washing the catalyst surface with water. Surface science techniques were used to view the topography of the catalyst and to identify the elements causing the deactivation. Procedural observations of interest in the context of our recirculating batch reactor include the following: the rate of oxidation of hexane was used to assess the activity of a photocatalyst sample; hexane is an appropriate choice of a probe molecule because it does not adsorb in the dark and it undergoes photocatalytic oxidation (PCO) completely, forming CO2; and hexane does not deactivate the photocatalyst surface. PMID:18236790

  10. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes at this surface. Additionally, we show that we can control the lateral feature sizes and obtain an optimized roughness for light scattering. With this new knowledge we were able to indicate the influence of the surface plasmon absorption of the textured Ag layers on the current enhancement and recognize this effect as one of the limiting factors to the current increase in thin film solar cells. Finally we present the dark and light current voltage (J-V) parameters of muc-Si:H solar cells as a function of the rms roughness of the substrate. We show that increased roughness can result in an increased defect density of the absorbing silicon layer (i layer), which limits the current collection in the solar cell. The presented research gives better understanding of the effect of TCOs and textured interfaces on light trapping and current enhancement in thin film silicon solar cells. The thesis explains some fundamental insights in light scattering and reveals some material and morphology features that are dominantly limiting the current generation in muc-Si:H solar cells deposited on light scattering back reflectors. Furthermore, it presents a method to obtain optimized back scattering contacts at deposition temperatures below 300 oC, which opens the possibility for the use of heat resistant plastic substrates. We improved the muc-Si:H solar cell efficiency with flat back reflectors from 4.5 % and 14.6 mA/cm2 to 8.5 % and 23.4 mA/cm2 with the use of optimized back reflectors.

  11. Oxidation Behavior of Germanium- and/or Silicon-Bearing Near-α Titanium Alloys in Air

    NASA Astrophysics Data System (ADS)

    Kitashima, Tomonori; Yamabe-Mitarai, Yoko

    2015-06-01

    The effect of germanium (Ge) and/or silicon (Si) addition on the oxidation behavior of the near-α alloy Ti-5Al-2Sn-4Zr-2Mo was investigated in air at 973 K (700 °C). Ge addition decreased the oxidation resistance because of the formation of a Ge-rich layer in the substrate at the TiO2/substrate interface, enhancing Sn segregation at the interface. In addition, a small amount of Ge dissolved in the external Al2O3 layer. These results reduced the aluminum activity at the interface, suppressed the formation of Al2O3, and increased the diffusivity of oxygen in the oxide scales. The addition of 0.2 and 0.9 wt pct Si was beneficial for improving oxidation resistance. The effect of germanide and silicide precipitates in the matrix on the oxide growth process was also discussed.

  12. Effects of fine metal oxide particle dopant on the acoustic properties of silicone rubber lens for medical array probe.

    PubMed

    Hosono, Yasuharu; Yamashita, Yohachi; Itsumi, Kazuhiro

    2007-08-01

    The effects of fine metal oxide particles, particularly those of high-density elements (7.7 to 9.7 x 10(3) kg/m3), on the acoustic properties of silicone rubber have been investigated in order to develop an acoustic lens with a low acoustic attenuation. Silicone rubber doped with Yb2O3 powder having nanoparticle size of 16 nm showed a lower acoustic attenuation than silicone rubber doped with powders of CeO2, Bi2O3, Lu2O3 and HfO2. The silicone rubber doped with Yb2O3 powder showed a sound speed of 0.88 km/s, an acoustic impedance of 1.35 x 10(6) kg/m2s, an acoustic attenuation of 0.93 dB/mmMHz, and a Shore A hardness of 55 at 37 degrees C. Although typical silicone rubber doped with SiO2 (2.6 x 10(3) kg/m3) shows a sound speed of about 1.00 km/s, heavy metal oxide particles decreased the sound velocities to lower than 0.93 km/s. Therefore, an acoustic lens of silicone rubber doped with Yb2O3 powder provides increased sensitivity because it realizes a thinner acoustic lens than is conventionally used due to its low sound speed. Moreover, it has an advantage in that a focus point is not changed when the acoustic lens is pressed to a human body due to its reasonable hardness. PMID:17703662

  13. Bismuth-ring-doped fibres

    SciTech Connect

    Zlenko, Aleksandr S; Dvoirin, Vladislav V; Bogatyrev, Vladimir A; Firstov, Sergei V; Akhmetshin, Ural G

    2009-11-30

    A new process for bismuth doping of optical fibres is proposed in which the dopant is introduced into a thin layer surrounding the fibre core. This enables bismuth stabilisation in the silica glass, with no limitations on the core composition. In particular, the GeO{sub 2} content of the fibre core in this study is 16 mol %. Spectroscopic characterisation of such fibres and optical gain measurements suggest that the proposed approach has considerable potential for laser applications. (optical fibres and fibreoptic sensors)

  14. Bismuth bronze from machu picchu, peru.

    PubMed

    Gordon, R B; Rutledge, J W

    1984-02-10

    The decorative bronze handle of a tumi excavated at the Inca city of Machu Picchu, Peru, contains 18 percent bismuth and appears to be the first known example of the use of bismuth with tin to make bronze. The alloy is not embrittled by the bismuth because the bismuth-rich constituent does not penetrate the grain boundaries of the matrix phase. The use of bismuth facilitates the duplex casting process by which the tumi was made and forms an alloy of unusual color. PMID:17749940

  15. Comparison between transient and frequency modulated excitation: application to silicon nitride and aluminum oxide coatings of silicon.

    PubMed

    Klein, D; Ohm, W; Fengler, S; Kunst, M

    2014-06-01

    Contactless measurements of the lifetime of charge carriers are presented with varying ways of photo excitation: with and without bias light and pulsed and frequency modulated. These methods are applied to the study of the surface passivation of single crystalline silicon by a-SiN(x):H and Al2O3 coatings. The properties of these coatings are investigated under consideration of the merits of the different methods. PMID:24985850

  16. Third order nonlinear optical properties of bismuth zinc borate glasses

    SciTech Connect

    Shanmugavelu, B.; Ravi Kanth Kumar, V. V.; Kuladeep, R.; Narayana Rao, D.

    2013-12-28

    Third order nonlinear optical characterization of bismuth zinc borate glasses are reported here using different laser pulse durations. Bismuth zinc borate glasses with compositions xBi{sub 2}O{sub 3}-30ZnO-(70-x) B{sub 2}O{sub 3} (where x = 30, 35, 40, and 45 mol. %) have been prepared by melt quenching method. These glasses were characterized by Raman, UV-Vis absorption, and Z scan measurements. Raman and UV-Vis spectroscopic results indicate that non-bridging oxygens increase with increase of bismuth content in the glass. Nonlinear absorption and refraction behavior in the nanosecond (ns), picosecond (ps), and femtosecond (fs) time domains were studied in detail. Strong reverse saturable absorption due to dominant two-photon absorption (TPA) was observed with both ps and fs excitations. In the case of ns pulse excitations, TPA and free-carrier absorption processes contribute for the nonlinear absorption. Two-photon absorption coefficient (β) and the absorption cross section due to free carriers (σ{sub e}) are estimated by theoretical fit of the open aperture Z-scan measurements and found to be dependent on the amount of bismuth oxide in the glass composition. In both ns and fs regimes the sign and magnitude of the third order nonlinearity are evaluated, and the optical limiting characteristics are also reported.

  17. Cobalt-silicon mixed oxide nanocomposites by modified sol-gel method

    SciTech Connect

    Esposito, Serena; Turco, Maria; Ramis, Gianguido; Bagnasco, Giovanni; Pernice, Pasquale; Pagliuca, Concetta; Bevilacqua, Maria; Aronne, Antonio

    2007-12-15

    Cobalt-silicon mixed oxide materials (Co/Si=0.111, 0.250 and 0.428) were synthesised starting from Co(NO{sub 3}){sub 2}.6H{sub 2}O and Si(OC{sub 2}H{sub 5}){sub 4} using a modified sol-gel method. Structural, textural and surface chemical properties were investigated by thermogravimetric/differential thermal analyses (TG/DTA), XRD, UV-vis, FT-IR spectroscopy and N{sub 2} adsorption at -196 deg. C. The nature of cobalt species and their interactions with the siloxane matrix were strongly depending on both the cobalt loading and the heat treatment. All dried gels were amorphous and contained Co{sup 2+} ions forming both tetrahedral and octahedral complexes with the siloxane matrix. After treatment at 400 deg. C, the sample with lowest Co content appeared amorphous and contained only Co{sup 2+} tetrahedral complexes, while at higher cobalt loading Co{sub 3}O{sub 4} was present as the only crystalline phase, besides Co{sup 2+} ions strongly interacting with siloxane matrix. At 850 deg. C, in all samples crystalline Co{sub 2}SiO{sub 4} was formed and was the only crystallising phase for the nanocomposite with the lowest cobalt content. All materials retained high surface areas also after treatments at 600 deg. C and exhibited surface Lewis acidity, due to cationic sites. The presence of cobalt affected the textural properties of the siloxane matrix decreasing microporosity and increasing mesoporosity. - Graphical abstract: Highly dispersed cobalt-silicon mixed oxide nanocomposites (Co/Si=0.111, 0.250 and 0.428) were obtained by a modified sol-gel method using almost solely aqueous solutions. The nature of cobalt species and their interactions with the siloxane matrix are strongly depending on both the cobalt loading and the heat treatment. All materials retained high surface areas also after treatments at 600 deg. C and exhibited surface Lewis acidity.

  18. Role of surface oxides in the formation of solid-electrolyte interphases at silicon electrodes for lithium-ion batteries.

    PubMed

    Schroder, Kjell W; Dylla, Anthony G; Harris, Stephen J; Webb, Lauren J; Stevenson, Keith J

    2014-12-10

    Nonaqueous solvents in modern battery technologies undergo electroreduction at negative electrodes, leading to the formation of a solid-electrolyte interphase (SEI). The mechanisms and reactions leading to a stable SEI on silicon electrodes in lithium-ion batteries are still poorly understood. This lack of understanding inhibits the rational design of electrolyte additives, active material coatings, and the prediction of Li-ion battery life in general. We prepared SEI with a common nonaqueous solvent (LiPF6 in PC and in EC/DEC 1:1 by wt %) on silicon oxide and etched silicon (001) surfaces in various states of lithiation to understand the role of surface chemistry on the SEI formation mechanism and SEI structure. Anhydrous and anoxic techniques were used to prevent air and moisture contamination of prepared SEI films, allowing for more accurate characterization of SEI chemical stratification and composition by X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) depth profiling. Additionally, multivariate statistical methods were used to better understand TOF-SIMS depth profiling studies. We conclude that the absence of native-oxide layer on silicon has a significant impact on the formation, composition, structure, and thickness of the SEI. PMID:25402271

  19. Room temperature NO2 gas sensing of Au-loaded tungsten oxide nanowires/porous silicon hybrid structure

    NASA Astrophysics Data System (ADS)

    Deng-Feng, Wang; Ji-Ran, Liang; Chang-Qing, Li; Wen-Jun, Yan; Ming, Hu

    2016-02-01

    In this work, we report an enhanced nitrogen dioxide (NO2) gas sensor based on tungsten oxide (WO3) nanowires/porous silicon (PS) decorated with gold (Au) nanoparticles. Au-loaded WO3 nanowires with diameters of 10 nm-25 nm and lengths of 300 nm-500 nm are fabricated by the sputtering method on a porous silicon substrate. The high-resolution transmission electron microscopy (HRTEM) micrographs show that Au nanoparticles are uniformly distributed on the surfaces of WO3 nanowires. The effect of the Au nanoparticles on the NO2-sensing performance of WO3 nanowires/porous silicon is investigated over a low concentration range of 0.2 ppm-5 ppm of NO2 at room temperature (25 °C). It is found that the 10-Å Au-loaded WO3 nanowires/porous silicon-based sensor possesses the highest gas response characteristic. The underlying mechanism of the enhanced sensing properties of the Au-loaded WO3 nanowires/porous silicon is also discussed. Project supported by the National Natural Science Foundation of China (Grant Nos. 61274074 and 61271070) and the Key Research Program of Application Foundation and Advanced Technology of Tianjin, China (Grant No. 11JCZDJC15300).

  20. A Silicon-Based Nanothin Film Solid Oxide Fuel Cell Array with Edge Reinforced Support for Enhanced Thermal Mechanical Stability.

    PubMed

    Baek, Jong Dae; Yu, Chen-Chiang; Su, Pei-Chen

    2016-04-13

    A silicon-based micro-solid oxide fuel cell (μ-SOFC) with electrolyte membrane array embedded in a thin silicon supporting membrane, featuring a unique edge reinforcement structure, was demonstrated by utilizing simple silicon micromachining processes. The square silicon supporting membrane, fabricated by combining deep reactive ion etching and through-wafer wet etching processes, has thicker edges and corners than the center portion of the membrane, which effectively improved the mechanical stability of the entire fuel cell array during cell fabrication and cell operation. The 20 μm thick single crystalline silicon membrane supports a large number of 80 nm thick free-standing yttria-stabilized zirconia (YSZ) electrolytes. The fuel cell array was stably maintained at the open circuit voltage (OCV) of 1.04 V for more than 30 h of operation at 350 °C. A high peak power density of 317 mW/cm(2) was obtained at 400 °C. During a rigorous in situ thermal cycling between 150 and 400 °C at a fast cooling and heating rate of 25 °C/min, the OCV of the μ-SOFC recovered to its high value of 1.07 V without any drop caused by membrane failure, which justifies the superior thermal stability of this novel cell architecture. PMID:26990604

  1. Bismuth Passivation Technique for High-Resolution X-Ray Detectors

    NASA Technical Reports Server (NTRS)

    Chervenak, James; Hess, Larry

    2013-01-01

    The Athena-plus team requires X-ray sensors with energy resolution of better than one part in 3,000 at 6 keV X-rays. While bismuth is an excellent material for high X-ray stopping power and low heat capacity (for large signal when an X-ray is stopped by the absorber), oxidation of the bismuth surface can lead to electron traps and other effects that degrade the energy resolution. Bismuth oxide reduction and nitride passivation techniques analogous to those used in indium passivation are being applied in a new technique. The technique will enable improved energy resolution and resistance to aging in bismuth-absorber-coupled X-ray sensors. Elemental bismuth is lithographically integrated into X-ray detector circuits. It encounters several steps where the Bi oxidizes. The technology discussed here will remove oxide from the surface of the Bi and replace it with nitridized surface. Removal of the native oxide and passivating to prevent the growth of the oxide will improve detector performance and insulate the detector against future degradation from oxide growth. Placing the Bi coated sensor in a vacuum system, a reduction chemistry in a plasma (nitrogen/hydrogen (N2/H2) + argon) is used to remove the oxide and promote nitridization of the cleaned Bi surface. Once passivated, the Bi will perform as a better X-ray thermalizer since energy will not be trapped in the bismuth oxides on the surface. A simple additional step, which can be added at various stages of the current fabrication process, can then be applied to encapsulate the Bi film. After plasma passivation, the Bi can be capped with a non-diffusive layer of metal or dielectric. A non-superconducting layer is required such as tungsten or tungsten nitride (WNx).

  2. On the photoluminescence of as-deposited Tb-doped silicon oxides and oxynitrides fabricated by ECR-PECVD

    NASA Astrophysics Data System (ADS)

    Ramírez, J. M.; Wojcik, J.; Berencén, Y.; Mascher, P.; Garrido, B.

    2014-05-01

    In-situ doping of Tb3+ ions in silicon oxides and oxynitrides deposited by electron-cyclotron-resonance plasma enhanced chemical-vapour (ECR-PECVD) has been performed. Oxygen and nitrogen gas flow rates were changed to produce a gradual substitution of oxygen by nitrogen in the host matrix. Bright green luminescence from as-deposited layers is observed by the naked eye under daylight conditions. Tbdoped nitrogen-rich samples showed a considerable photoluminescence (PL) enhancement compared to Tb-doped silicon oxides. An optimum layer composition for efficient Tb3+ excitation under non-resonant optical pumping is obtained. The combination of a low temperature treatment with bright luminescence could be instrumental for the development of light emitting devices in other platforms with more restrictive temperature requirements.

  3. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOEpatents

    Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2015-09-08

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  4. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOEpatents

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  5. PROCESS USING BISMUTH PHOSPHATE AS A CARRIER PRECIPITATE FOR FISSION PRODUCTS AND PLUTONIUM VALUES

    DOEpatents

    Finzel, T.G.

    1959-03-10

    A process is described for separating plutonium from fission products carried therewith when plutonium in the reduced oxidation state is removed from a nitric acid solution of irradiated uranium by means of bismuth phosphate as a carrier precipitate. The bismuth phosphate carrier precipitate is dissolved by treatment with nitric acid and the plutonium therein is oxidized to the hexavalent oxidation state by means of potassium dichromate. Separation of the plutonium from the fission products is accomplished by again precipitating bismuth phosphate and removing the precipitate which now carries the fission products and a small percentage of the plutonium present. The amount of plutonium carried in this last step may be minimized by addition of sodium fluoride, so as to make the solution 0.03N in NaF, prior to the oxidation and prccipitation step.

  6. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    NASA Astrophysics Data System (ADS)

    Czapski, M.; Stora, T.; Tardivat, C.; Deville, S.; Santos Augusto, R.; Leloup, J.; Bouville, F.; Fernandes Luis, R.

    2013-12-01

    New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

  7. From GaAs MOSFETs to epitaxial oxides on silicon : old and new MBE stories.

    NASA Astrophysics Data System (ADS)

    Fompeyrine, Jean

    2008-03-01

    50 years of intense development in chip technology did not fundamentally change the initial concept: the capability to modulate charges right at the interface between two dissimilar materials. This concept allowed the whole microelectronic industry to develop exponentially and to disseminate its products all over our environment. Two simple reasons can be given to such a success: i) device scaling was a simple and cost-effective method to make chip faster; ii) faster chips simply allowed our computing environment to perform new functions. None of the two reasons given will remain true in the next few years. Scaling has come to an end. The materials properties will be scaled instead of the device itself. The recent introduction of high-k materials perfectly illustrates such a transition. The future success for chip makers might then depends on new rules: i) many new materials will be developed, and interfaces, still a key element for a device to perform better, will multiply; ii) The future technology developments will be more expensive and generate smaller performance gains. The added value might be then in the integration of functions implemented in these new materials. A few years ago, molecular beam epitaxy allowed band-gap engineering in compound semiconductors to build new devices and, more recently, was successfully used to explore the physics and chemistry of complex perovskites. During the last years, new developments have been made to combine oxides and semiconductors. In particular, many groups have reported the growth of epitaxial oxides on silicon surfaces. The recent and renewed interest in compound semiconductor MOSFETs structures might indeed be seen as a logical conclusion for this evolution. This presentation will review the latest developments in the field, with a focus on the activities taking place at IBM Zurich. It will also put them in perspective with the new rules the microelectronic industry might follow.

  8. Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission

    NASA Astrophysics Data System (ADS)

    El-Atab, Nazek; Ozcan, Ayse; Alkis, Sabri; Okyay, Ali K.; Nayfeh, Ammar

    2014-01-01

    A low power zinc-oxide (ZnO) charge trapping memory with embedded silicon (Si) nanoparticles is demonstrated. The charge trapping layer is formed by spin coating 2 nm silicon nanoparticles between Atomic Layer Deposited ZnO steps. The threshold voltage shift (ΔVt) vs. programming voltage is studied with and without the silicon nanoparticles. Applying -1 V for 5 s at the gate of the memory with nanoparticles results in a ΔVt of 3.4 V, and the memory window can be up to 8 V with an excellent retention characteristic (>10 yr). Without nanoparticles, at -1 V programming voltage, the ΔVt is negligible. In order to get ΔVt of 3.4 V without nanoparticles, programming voltage in excess of 10 V is required. The negative voltage on the gate programs the memory indicating that holes are being trapped in the charge trapping layer. In addition, at 1 V the electric field across the 3.6 nm tunnel oxide is calculated to be 0.36 MV/cm, which is too small for significant tunneling. Moreover, the ΔVt vs. electric field across the tunnel oxide shows square root dependence at low fields (E < 1 MV/cm) and a square dependence at higher fields (E > 2.7 MV/cm). This indicates that Poole-Frenkel Effect is the main mechanism for holes emission at low fields and Phonon Assisted Tunneling at higher fields.

  9. Fabrication of silicon nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)-graphene oxide hybrid solar cells

    NASA Astrophysics Data System (ADS)

    Uma, Kasimayan; Subramani, Thiyagu; Syu, Hong-Jhang; Lin, Tzu-Ching; Lin, Ching-Fuh

    2015-03-01

    Silicon nanowire (SiNW)/Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) Schottky junctions have shown great promise as high efficiency, cost effective solar cells. Here, hybrid SiNWs/PEDOT:PSS blended graphene oxide (GO) solar cells are prepared and investigated. The SiNWs/PEDOT:PSS blended GO cells show enhanced light trapping and a large junction area when compared to pure PEDOT:PSS structures. SiNWs combined with GO solar cells show energy conversion efficiencies of up to 9.57% under the AM 1.5G condition, opening the possibility of using semiconductor/graphene oxide in photovoltaic applications.

  10. Characterization of hybrid cobalt-porous silicon systems: protective effect of the Matrix in the metal oxidation

    PubMed Central

    2012-01-01

    In the present work, the characterization of cobalt-porous silicon (Co-PSi) hybrid systems is performed by a combination of magnetic, spectroscopic, and structural techniques. The Co-PSi structures are composed by a columnar matrix of PSi with Co nanoparticles embedded inside, as determined by Transmission Electron Microscopy (TEM). The oxidation state, crystalline structure, and magnetic behavior are determined by X-Ray Absorption Spectroscopy (XAS) and Alternating Gradient Field Magnetometry (AGFM). Additionally, the Co concentration profile inside the matrix has been studied by Rutherford Backscattering Spectroscopy (RBS). It is concluded that the PSi matrix can be tailored to provide the Co nanoparticles with extra protection against oxidation. PMID:22938050

  11. Selective growth of vertical silicon nanowire array guided by anodic aluminum oxide template

    NASA Astrophysics Data System (ADS)

    Hoang Nguyen, Van; Hoshi, Yusuke; Usami, Noritaka; Konagai, Makoto

    2015-09-01

    We report on the selective growth of vertical silicon nanowire arrays guided by an anodic aluminum oxide (AAO) template without the introduction of any metallic catalyst. Gas-source molecular beam epitaxy using disilane as a source gas was carried out. The growth conditions such as flow rate and growth temperature were changed to optimize the Si nanowire growth. It was found that the selective growth was promoted at a flow rate of 0.5 sccm, whereas the selective growth was poor at high flow rates of 1 and 2 sccm. One-micrometer-long Si nanowire arrays were obtained at a low flow rate of 0.5 sccm only at the growth temperature of 700 °C. The obtained Si grown at a temperature of 650 °C exhibited conglomerated structures with Si grains piled up inside the nanopores of the AAO template. We found that increasing the growth temperature and decreasing the flow rate are useful for improving the growth selectivity.

  12. The catalytic effect of Pt nanoparticles supported on silicon oxide nanowire

    NASA Astrophysics Data System (ADS)

    Kim, Jung Hoon; Woo, Hee Jin; Kim, Chang Kyung; Yoon, Chong Seung

    2009-06-01

    3.5 nm sized Pt nanocatalysts supported on silicon oxide nanowires (SiOXNWs) were fabricated by decorating the SiOXNWs with Pt nanoparticles using a simple physical deposition system without any surface pretreatment. High curvature of the nanowire surface together with the weak metal-substrate interaction helped to maintain discrete particle morphology with spherical shapes during deposition. Catalytic efficiency of the SiOXNWs coated with Pt nanoparticles was demonstrated through reduction of methylene blue in the presence of sodium borohydride. It was demonstrated that the highly curved nanowire surface allowed the Pt nanoparticles to be loaded with increased particle density, providing a larger surface area for the catalytic reaction. It was also shown that a simple heat treatment in vacuum improves the effectiveness of the Pt nanoparticles as a catalyst without loss of catalytic activity when used repeatedly. We expect that this metal nanoparticle-decorated nanowire can be easily extended to other heterogeneous reactions and can also be used as a template for building three-dimensional hierarchical nanostructures.

  13. Complementary metal oxide semiconductor-compatible silicon nanowire biofield-effect transistors as affinity biosensors.

    PubMed

    Duan, Xuexin; Rajan, Nitin K; Izadi, Mohammad Hadi; Reed, Mark A

    2013-11-01

    Affinity biosensors use biorecognition elements and transducers to convert a biochemical event into a recordable signal. They provides the molecule binding information, which includes the dynamics of biomolecular association and dissociation, and the equilibrium association constant. Complementary metal oxide semiconductor-compatible silicon (Si) nanowires configured as a field-effect transistor (NW FET) have shown significant advantages for real-time, label-free and highly sensitive detection of a wide range of biomolecules. Most research has focused on reducing the detection limit of Si-NW FETs but has provided less information about the real binding parameters of the biomolecular interactions. Recently, Si-NW FETs have been demonstrated as affinity biosensors to quantify biomolecular binding affinities and kinetics. They open new applications for NW FETs in the nanomedicine field and will bring such sensor technology a step closer to commercial point-of-care applications. This article summarizes the recent advances in bioaffinity measurement using Si-NW FETs, with an emphasis on the different approaches used to address the issues of sensor calibration, regeneration, binding kinetic measurements, limit of detection, sensor surface modification, biomolecule charge screening, reference electrode integration and nonspecific molecular binding. PMID:24156488

  14. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing

    PubMed Central

    2014-01-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03mA/cm2) were obtained as the proposed MOS-structure solar cell biased at 2.5V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode. PMID:25593550

  15. Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

    NASA Astrophysics Data System (ADS)

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Ting-Chang; Lee, Jack C.

    2016-02-01

    We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology.

  16. Plasma enhanced chemical vapor deposition of silicon oxide films with divinyldimethylsilane and tetravinylsilane

    SciTech Connect

    Park, Sung-Gyu; Rhee, Shi-Woo

    2006-03-15

    Carbon-doped silicon oxide (SiCOH) low-k films were deposited with plasma enhanced chemical vapor deposition (PECVD) using divinyldimethylsilane (DVDMS) with two vinyl groups and tetravinylsilane (TVS) with four vinyl groups compared with vinyltrimethylsilane (VTMS) with one vinyl group. With more vinyl groups in the precursor, due to the crosslinking of the vinyl groups, the film contains more of an organic phase and organic phase became less volatile. It was confirmed that the deposition rate, refractive index, and k value increase with more vinyl groups in the precursor molecule. After annealing, the SiCOH films deposited with DVDMS and TVS showed a low dielectric constant of 2.2 and 2.4 at optimum conditions, respectively. In both cases, the annealed film had low leakage current density (J=6.7x10{sup -7} A/cm{sup 2} for SiCOH film of DVDMS and J=1.18x10{sup -8} A/cm{sup 2} for SiCOH film of TVS at 1 MV/cm) and relatively high breakdown field strength (E>4.0 MV/cm at 1 mA/cm{sup 2}), which is comparable to those of PECVD SiO{sub 2}.

  17. H2O2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity

    NASA Astrophysics Data System (ADS)

    Schmidt, Harald; Meuris, Marc; Mertens, Paul; Rotondaro, Antonio; Heyns, Marc; Hurd, Trace; Hatcher, Zach

    1995-02-01

    In this study the impact of temperature and metal contamination on the stability of hydrogen peroxide in the two most common wet chemical cleaning mixtures for wafer process operations has been investigated. The stability of the caustic mixture ( NH4OH/H2O2/H2O) was found to be very sensitive to certain metallic contaminations in the sub-ppb range, while the stability of the acid mixture ( HCl/H2O2/H2O) is mainly influenced by non metallic, anionic components of the solution itself. We observed also a strong oscillating behaviour of the rate of the oxygen gas evolution caused by the decomposition of H2O2. Furthermore it was found, that the oxygen gas bubbles, formed by the decomposition of hydrogen peroxide cause a certain kind of micro-roughness on the silicon surface through a micro masking mechanism. In a series of experiments we could prove that this kind of surface roughness has a significant impact on the integrity of thin gate oxides.

  18. Moisture-assisted cracking and atomistic crack path meandering in oxidized hydrogenated amorphous silicon carbide films

    NASA Astrophysics Data System (ADS)

    Matsuda, Yusuke; King, Sean W.; Oliver, Mark; Dauskardt, Reinhold H.

    2013-02-01

    Moisture-assisted cracking of silica-derived materials results from a stress-enhanced reaction between water molecules and moisture-sensitive SiOSi bonds at the crack tip. We report the moisture-assisted cracking of oxidized hydrogenated amorphous silicon carbide films (a-SiCO:H) consisting of both moisture-sensitive SiOSi bonds and moisture-insensitive bonds. The sensitivity of the films to moisture-assisted cracking was observed to increase with the SiOSi bond density, ρSiOSi. This sensitivity was correlated with the number of SiOSi bonds ruptured, NSiOSi, through an atomistic kinetic fracture model. By comparing these correlated NSiOSi values with those estimated by a planar crack model, we demonstrated that at the atomistic scale the crack path meanders three-dimensionally so as to intercept the most SiOSi bonds. This atomistic crack path meandering was verified by a computational method based on graph theory and molecular dynamics. Our findings could provide a basis for better understanding of moisture-assisted cracking in materials consisting of other types of moisture-sensitive and moisture-insensitive bonds.

  19. Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

    PubMed Central

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Ting-Chang; Lee, Jack C.

    2016-01-01

    We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2–based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology. PMID:26880381

  20. Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.

    PubMed

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Ting-Chang; Lee, Jack C

    2016-01-01

    We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology. PMID:26880381