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Sample records for bismuth silicon oxide

  1. Bismuth Oxide Thin Films Deposited on Silicon Through Pulsed Laser Ablation, for Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Condurache-Bota, Simona; Constantinescu, Catalin; Tigau, Nicolae; Praisler, Mirela

    2016-12-01

    Infrared detectors are used in many human activities, from industry to military, telecommunications, environmental studies and even medicine. Bismuth oxide thin films have proved their potential for optoelectronic applications, but their uses as infrared sensors have not been thoroughly studied so far. In this paper, pulsed laser ablation of pure bismuth targets within a controlled oxygen atmosphere is proposed for the deposition of bismuth oxide films on Si (100) substrates. Crystalline films were obtained, whose uniformity depends on the deposition conditions (number of laser pulses and the use of a radio-frequency (RF) discharge of the oxygen inside the deposition chamber). The optical analysis proved that the refractive index of the films is higher than 3 and that their optical bandgap is around 1eV, recommending them for infrared applications.

  2. Buried oxide layer in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  3. Spin dynamics of complex oxides, bismuth-antimony alloys, and bismuth chalcogenides

    NASA Astrophysics Data System (ADS)

    Sahin, Cuneyt

    The emerging field of spintronics relies on the manipulation of electron spin in order to use it in spin-based electronics. Such a paradigm change has to tackle several challenges including finding materials with sufficiently long spin lifetimes and materials which are efficient in generating pure spin currents. This thesis predicts that two types of material families could be a solution to the aforementioned challenges: complex oxides and bismuth based materials. We derived a general approach for constructing an effective spin-orbit Hamiltonian which is applicable to all nonmagnetic materials. This formalism is useful for calculating spin-dependent properties near an arbitrary point in momentum space. We also verified this formalism through comparisons with other approaches for III-V semiconductors, and its general applicability is illustrated by deriving the spin-orbit interaction and predicting spin lifetimes for strained strontium titanate (STO) and a two-dimensional electron gas in STO (such as at the LAO/STO interface). Our results suggest robust spin coherence and spin transport properties in STO related materials even at room temperature. In the second part of the study we calculated intrinsic spin Hall conductivities for bismuth-antimony (BISb) semimetals with strong spin-orbit couplings, from the Kubo formula and using Berry curvatures evaluated throughout the Brillouin zone from a tight-binding Hamiltonian. Nearly crossing bands with strong spin-orbit interaction generate giant spin Hall conductivities in these materials, ranging from 474 ((h/e)O--1cm--1) for bismuth to 96((h/e)O--1cm --1) for antimony; the value for bismuth is more than twice that of platinum. The large spin Hall conductivities persist for alloy compositions corresponding to a three-dimensional topological insulator state, such as Bi0.83Sb0.17. The spin Hall conductivity could be changed by a factor of 5 for doped Bi, or for Bi0.83Sb0.17, by changing the chemical potential by 0.5 e

  4. [Efficient oxidative degradation of tetrabromobisphenol A by silver bismuth oxide].

    PubMed

    Chen, Man-tang; Song, Zhou; Wang, Nan; Ding, Yao-bin; Liao, Hai-xing; Zhu, Li-hua

    2015-01-01

    Silver bismuth oxide(BSO) was prepared by a simple ion exchange-coprecipitation method with AgNO3 and NaBiO, .2H2O as raw materials, and then used to oxidatively degrade tetrabromobisphenol A(TBBPA). Effects of the molar ratio of Ag/Bi during BSO preparation and the BSO dosage on the degradation of TBBPA were investigated. The results showed that under the optimized conditions (i.e., the Ag/Bi molar ratio of 1:1, BSO dosage of 1 g x L(-1), 40 mg x L(-1) of TBBPA was completely degraded and the removal of total organic carbon achieved more than 80% within 7 min. The degradation intermediates of TBBPA were identified by ion chromatography, gas chromatograph-mass spectrometer and X-ray photoelectron spectroscopy. The degradation pathway of TBBPA included the debromination, the cleavage of tert-butyl group and the open epoxidation of benzene ring. Based on a quenching study of NaN3, singlet oxygen was proved to play a dominant role in the TBBPA degradation. PMID:25898666

  5. Bismuth-based oxide semiconductors: Mild synthesis and practical applications

    NASA Astrophysics Data System (ADS)

    Timmaji, Hari Krishna

    In this dissertation study, bismuth based oxide semiconductors were prepared using 'mild' synthesis techniques---electrodeposition and solution combustion synthesis. Potential environmental remediation and solar energy applications of the prepared oxides were evaluated. Bismuth vanadate (BiVO4) was prepared by electrodeposition and solution combustion synthesis. A two step electrosynthesis strategy was developed and demonstrated for the first time. In the first step, a Bi film was first electrodeposited on a Pt substrate from an acidic BiCl3 medium. Then, this film was anodically stripped in a medium containing hydrolyzed vanadium precursor, to generate Bi3+, and subsequent BiVO4 formation by in situ precipitation. The photoelectrochemical data were consistent with the in situ formation of n-type semiconductor films. In the solution combustion synthesis procedure, BiVO4 powders were prepared using bismuth nitrate pentahydrate as the bismuth precursor and either vanadium chloride or vanadium oxysulfate as the vanadium precursor. Urea, glycine, or citric acid was used as the fuel. The effect of the vanadium precursor on the photocatalytic activity of combustion synthesized BiVO 4 was evaluated in this study. Methyl orange was used as a probe to test the photocatalytic attributes of the combustion synthesized (CS) samples, and benchmarked against a commercial bismuth vanadate sample. The CS samples showed superior activity to the commercial benchmark sample, and samples derived from vanadium chloride were superior to vanadium oxysulfate counterparts. The photoelectrochemical properties of the various CS samples were also studied and these samples were shown to be useful both for environmental photocatalytic remediation and water photooxidation applications. Silver bismuth tungstate (AgBiW2O8) nanoparticles were prepared for the first time by solution combustion synthesis by using silver nitrate, bismuth nitrate, sodium tungstate as precursors for Ag, Bi, and W

  6. Oxide layer stability in lead-bismuth at high temperature

    NASA Astrophysics Data System (ADS)

    Martín, F. J.; Soler, L.; Hernández, F.; Gómez-Briceño, D.

    2004-11-01

    Materials protection by 'in situ' oxidation has been studied in stagnant lead-bismuth, with different oxygen levels (H 2/H 2O ratios of 0.3 and 0.03), at temperatures from 535 °C to 600 °C and times from 100 to 3000 h. The materials tested were the martensitic steels F82Hmod, EM10 and T91 and the austenitic stainless steels, AISI 316L and AISI 304L. The results obtained point to the existence of an apparent threshold temperature above which corrosion occurs and the formation of a protective and stable oxide layer is not possible. This threshold temperature depends on material composition, oxygen concentration in the liquid lead-bismuth and time. The threshold temperature is higher for the austenitic steels, especially for the AISI 304L, and it increases with the oxygen concentration in the lead-bismuth. The oxide layer formed disappear with time and, after 3000 h all the materials, except AISI 304L, suffer corrosion, more severe for the martensitic steels and at the highest temperature tested.

  7. METHOD OF PREPARING URANIUM, THORIUM, OR PLUTONIUM OXIDES IN LIQUID BISMUTH

    DOEpatents

    Davidson, J.K.; Robb, W.L.; Salmon, O.N.

    1960-11-22

    A method is given for forming compositions, as well as the compositions themselves, employing uranium hydride in a liquid bismuth composition to increase the solubility of uranium, plutonium and thorium oxides in the liquid bismuth. The finely divided oxide of uranium, plutonium. or thorium is mixed with the liquid bismuth and uranium hydride, the hydride being present in an amount equal to about 3 at. %, heated to about 5OO deg C, agitated and thereafter cooled and excess resultant hydrogen removed therefrom.

  8. Bismuth oxide nanotubes-graphene fiber-based flexible supercapacitors

    NASA Astrophysics Data System (ADS)

    Gopalsamy, Karthikeyan; Xu, Zhen; Zheng, Bingna; Huang, Tieqi; Kou, Liang; Zhao, Xiaoli; Gao, Chao

    2014-07-01

    Graphene-bismuth oxide nanotube fiber as electrode material for constituting flexible supercapacitors using a PVA/H3PO4 gel electrolyte is reported with a high specific capacitance (Ca) of 69.3 mF cm-2 (for a single electrode) and 17.3 mF cm-2 (for the whole device) at 0.1 mA cm-2, respectively. Our approach opens the door to metal oxide-graphene hybrid fibers and high-performance flexible electronics.Graphene-bismuth oxide nanotube fiber as electrode material for constituting flexible supercapacitors using a PVA/H3PO4 gel electrolyte is reported with a high specific capacitance (Ca) of 69.3 mF cm-2 (for a single electrode) and 17.3 mF cm-2 (for the whole device) at 0.1 mA cm-2, respectively. Our approach opens the door to metal oxide-graphene hybrid fibers and high-performance flexible electronics. Electronic supplementary information (ESI) available: Equations and characterization. SEM images of GGO, XRD and XPS of Bi2O3 NTs, HRTEM images and EDX Spectra of Bi2O3 NT5-GF, CV curves of Bi2O3NT5-GF, Bi2O3 NTs and bismuth nitrate in three-electrode system (vs. Ag/AgCl). CV and GCD curves of Bi2O3 NT1-GF and Bi2O3 NT3-GF. See DOI: 10.1039/c4nr02615b

  9. Barium potassium bismuth oxide: A review

    SciTech Connect

    Baumert, B.A.

    1995-02-01

    Ba{sub 1-x}K{sub x}BiO{sub 3} (BKBO) has a {Tc} (onset) of 34 K. It is the highest-temperature oxide superconductor which is cubic, with a coherence length of 30-60{angstrom}. The basic properties of this compound are reviewed.

  10. Oxidation resistance of silicon ceramics

    NASA Technical Reports Server (NTRS)

    Yasutoshi, H.; Hirota, K.

    1984-01-01

    Oxidation resistance, and examples of oxidation of SiC, Si3N4 and sialon are reviewed. A description is given of the oxidation mechanism, including the oxidation product, oxidation reaction and the bubble size. The oxidation reactions are represented graphically. An assessment is made of the oxidation process, and an oxidation example of silicon ceramics is given.

  11. Bismuth Oxide Nanoparticles in the Stratosphere

    NASA Technical Reports Server (NTRS)

    Rietmeijer, Frans J. M.; Mackinnon, Ian D. R.

    1997-01-01

    Platey grains of cubic Bi2O3, alpha-Bi2O3, and Bi2O(2.75), nanograins were associated with chondritic porous interplanetary dust particles W7029C1, W7029E5, and 2011C2 that were collected in the stratosphere at 17-19 km altitude. Similar Bi oxide nanograins were present in the upper stratosphere during May 1985. These grains are linked to the plumes of several major volcanic eruptions during the early 1980s that injected material into the stratosphere. The mass of sulfur from these eruptions is a proxy for the mass of stratospheric Bi from which we derive the particle number densities (p/cu m) for "average Bi2O3 nanograins" due to this volcanic activity and those necessary to contaminate the extraterrestrial chondritic porous interplanetary dust particles via collisional sticking. The match between both values supports the idea that Bi2O3 nanograins of volcanic origin could contaminate interplanetary dust particles in the Earth's stratosphere.

  12. Optical pumping and readout of bismuth hyperfine states in silicon for atomic clock applications

    PubMed Central

    Saeedi, K.; Szech, M.; Dluhy, P.; Salvail, J.Z.; Morse, K.J.; Riemann, H.; Abrosimov, N.V.; Nötzel, N.; Litvinenko, K.L.; Murdin, B.N.; Thewalt, M.L.W.

    2015-01-01

    The push for a semiconductor-based quantum information technology has renewed interest in the spin states and optical transitions of shallow donors in silicon, including the donor bound exciton transitions in the near-infrared and the Rydberg, or hydrogenic, transitions in the mid-infrared. The deepest group V donor in silicon, bismuth, has a large zero-field ground state hyperfine splitting, comparable to that of rubidium, upon which the now-ubiquitous rubidium atomic clock time standard is based. Here we show that the ground state hyperfine populations of bismuth can be read out using the mid-infrared Rydberg transitions, analogous to the optical readout of the rubidium ground state populations upon which rubidium clock technology is based. We further use these transitions to demonstrate strong population pumping by resonant excitation of the bound exciton transitions, suggesting several possible approaches to a solid-state atomic clock using bismuth in silicon, or eventually in enriched 28Si. PMID:25990870

  13. Heat capacity, enthalpy and entropy of ternary bismuth tantalum oxides

    SciTech Connect

    Leitner, J.; Jakes, V.; Sofer, Z.; Sedmidubsky, D.; Ruzicka, K.; Svoboda, P.

    2011-02-15

    Heat capacity and enthalpy increments of ternary bismuth tantalum oxides Bi{sub 4}Ta{sub 2}O{sub 11}, Bi{sub 7}Ta{sub 3}O{sub 18} and Bi{sub 3}TaO{sub 7} were measured by the relaxation time method (2-280 K), DSC (265-353 K) and drop calorimetry (622-1322 K). Temperature dependencies of the molar heat capacity in the form C{sub pm}=445.8+0.005451T-7.489x10{sup 6}/T{sup 2} J K{sup -1} mol{sup -1}, C{sub pm}=699.0+0.05276T-9.956x10{sup 6}/T{sup 2} J K{sup -1} mol{sup -1} and C{sub pm}=251.6+0.06705T-3.237x10{sup 6}/T{sup 2} J K{sup -1} mol{sup -1} for Bi{sub 3}TaO{sub 7}, Bi{sub 4}Ta{sub 2}O{sub 11} and for Bi{sub 7}Ta{sub 3}O{sub 18}, respectively, were derived by the least-squares method from the experimental data. The molar entropies at 298.15 K, S{sup o}{sub m}(298.15 K)=449.6{+-}2.3 J K{sup -1} mol{sup -1} for Bi{sub 4}Ta{sub 2}O{sub 11}, S{sup o}{sub m}(298.15 K)=743.0{+-}3.8 J K{sup -1} mol{sup -1} for Bi{sub 7}Ta{sub 3}O{sub 18} and S{sup o}{sub m}(298.15 K)=304.3{+-}1.6 J K{sup -1} mol{sup -1} for Bi{sub 3}TaO{sub 7}, were evaluated from the low-temperature heat capacity measurements. -- Graphical Abstract: Temperature dependence of {Delta}{sub ox}C{sub pm} for bismuth tantalum mixed oxides. Display Omitted Research highlights: > Heat capacity, enthalpy and entropy of ternary bismuth tantalum oxides Bi{sub 4}Ta{sub 2}O{sub 11}, Bi{sub 7}Ta{sub 3}O{sub 18} and Bi{sub 3}TaO{sub 7}. > Heat capacity by DSC calorimetry and heat-pulsed calorimetry. > Enthalpy increments by drop calorimetry. > Einstein-Debye model for low-temperature dependence of the heat capacity. > Application of Neumann-Kopp rule.

  14. Tributylphosphate Extraction Behavior of Bismuthate-Oxidized Americium

    SciTech Connect

    Mincher; Leigh R. Martin; Nicholas C. Schmitt

    2008-08-01

    Higher oxidation states of americium have long been known; however, options for their preparation in acidic solution are limited. The conventional choice, silver-catalyzed peroxydisulfate, is not useful at nitric acid concentrations above about 0.3 M. We investigated the use of sodium bismuthate as an oxidant for Am3+ in acidic solution. Room-temperature oxidation produced AmO2 2+ quantitatively, whereas oxidation at 80 °C produced AmO2+ quantitatively. The efficacy of the method for the production of oxidized americium was verified by fluoride precipitation and by spectroscopic absorbance measurements. We performed absorbance measurements using a conventional 1 cm cell for high americium concentrations and a 100 cm liquid waveguide capillary cell for low americium concentrations. Extinction coefficients for the absorbance of Am3+ at 503 nm, AmO2+ at 514 nm, and AmO2 2+ at 666 nm in 0.1 M nitric acid are reported. We also performed solvent extraction experiments with the hexavalent americium using the common actinide extraction ligand tributyl phosphate (TBP) for comparison to the other hexavalent actinides. Contact with 30% tributyl phosphate in dodecane reduced americium; it was nevertheless extracted using short contact times. The TBP extraction of AmO2 2+ over a range of nitric acid concentrations is shown for the first time and was found to be analogous to that of uranyl, neptunyl, and plutonyl ions.

  15. Silicon oxidation in fluoride solutions

    NASA Technical Reports Server (NTRS)

    Sancier, K. M.; Kapur, V.

    1980-01-01

    Silicon is produced in a NaF, Na2SiF6, and Na matrix when SiF4 is reduced by metallic sodium. Hydrogen is evolved during acid leaching to separate the silicon from the accompanying reaction products, NaF and Na2SiF6. The hydrogen evolution reaction was studied under conditions simulating leaching conditions by making suspensions of the dry silicon powder in aqueous fluoride solutions. The mechanism for the hydrogen evolution is discussed in terms of spontaneous oxidation of silicon resulting from the cooperative effects of (1) elemental sodium in the silicon that reacts with water to remove a protective silica layer, leaving clean reactive silicon, and (2) fluoride in solution that complexes with the oxidized silicon in solution and retards formation of a protective hydrous oxide gel.

  16. Photoelastic constants of germanate glasses containing lead and bismuth oxides

    SciTech Connect

    Rabukhin, A.I.

    1995-07-01

    Regression equations which accurately approximate the concentration curves of the photoelastic constants of lead bismuth germanate glasses were obtained and the isolines of the photoelastic constants were plotted and graphically illustrate the change in the properties of the glasses in almost the entire glass-formation region of the PbO-Bi{sub 2}O{sub 3}-GeO{sub 2} system. The partial values of the photoelastic constants of the oxides, components of these glasses, were determined and are in agreement with the values established for glasses of other systems. The data obtained can be used in planning the compositions of effective optical media for fabrication of light and acoustic lines for acousto-optic instruments and glasses with a zero optical stress coefficient.

  17. Structure and resistivity of bismuth nanobelts in situ synthesized on silicon wafer through an ethanol-thermal method

    SciTech Connect

    Gao Zheng; Qin Haiming; Yan Tao

    2011-12-15

    Bismuth nanobelts in situ grown on a silicon wafer were synthesized through an ethanol-thermal method without any capping agent. The structure of the bismuth belt-silicon composite nanostructure was characterized by scanning electron microscope, energy-dispersive X-ray spectroscopy, and high resolution transmission electron microscope. The nanobelt is a multilayered structure 100-800 nm in width and over 50 {mu}m in length. One layer has a thickness of about 50 nm. A unique sword-like nanostructure is observed as the initial structure of the nanobelts. From these observations, a possible growth mechanism of the nanobelt is proposed. Current-voltage property measurements indicate that the resistivity of the nanobelts is slightly larger than that of the bulk bismuth material. - Graphical Abstract: TEM images, EDS, and electron diffraction pattern of bismuth nanobelts. Highlights: Black-Right-Pointing-Pointer Bismuth nanobelts in situ grown on silicon wafer were achieved. Black-Right-Pointing-Pointer Special bismuth-silicon nanostructure. Black-Right-Pointing-Pointer Potential application in sensitive magnetic sensor and other electronic devices.

  18. Bismuth oxide aqueous colloidal nanoparticles inhibit Candida albicans growth and biofilm formation

    PubMed Central

    Hernandez-Delgadillo, Rene; Velasco-Arias, Donaji; Martinez-Sanmiguel, Juan Jose; Diaz, David; Zumeta-Dube, Inti; Arevalo-Niño, Katiushka; Cabral-Romero, Claudio

    2013-01-01

    Multiresistance among microorganisms to common antimicrobials has become one of the most significant concerns in modern medicine. Nanomaterials are a new alternative to successfully treat the multiresistant microorganisms. Nanostructured materials are used in many fields, including biological sciences and medicine. Recently, it was demonstrated that the bactericidal activity of zero-valent bismuth colloidal nanoparticles inhibited the growth of Streptococcus mutans; however the antimycotic potential of bismuth nanostructured derivatives has not yet been studied. The main objective of this investigation was to analyze the fungicidal activity of bismuth oxide nanoparticles against Candida albicans, and their antibiofilm capabilities. Our results showed that aqueous colloidal bismuth oxide nanoparticles displayed antimicrobial activity against C. albicans growth (reducing colony size by 85%) and a complete inhibition of biofilm formation. These results are better than those obtained with chlorhexidine, nystatin, and terbinafine, the most effective oral antiseptic and commercial antifungal agents. In this work, we also compared the antimycotic activities of bulk bismuth oxide and bismuth nitrate, the precursor metallic salt. These results suggest that bismuth oxide colloidal nanoparticles could be a very interesting candidate as a fungicidal agent to be incorporated into an oral antiseptic. Additionally, we determined the minimum inhibitory concentration for the synthesized aqueous colloidal Bi2O3 nanoparticles. PMID:23637533

  19. A novel structure photonic crystal fiber based on bismuth-oxide for optical parametric amplification

    NASA Astrophysics Data System (ADS)

    Jin, Cang; Yuan, Jinhui; Yu, Chongxiu

    2010-11-01

    The heavy metal oxide glasses containing bismuth such as bismuth sesquioxide show unique high refractive index. In addition, the bismuth-oxide based glass does not include toxic elements such as Pb, As, Se, Te, and exhibits well chemical, mechanical and thermal stability. Hence, it is used to fabricate high nonlinear fiber for nonlinear optical application. Although the bismuth-oxide based high nonlinear fiber can be fusion-spliced to conventional silica fibers and have above advantages, yet it suffers from large group velocity dispersion because of material chromatic dispersion which restricts its utility. In regard to this, the micro-structure was introduced to adjust the dispersion of bismuth-oxide high nonlinear fiber in the 1550nm wave-band. In this paper, a hexagonal solid-core micro-structure is developed to balance its dispersion and nonlinearity. Our simulation and calculation results show that the bismuth-oxide based photonic crystal fiber has near zero dispersion around 1550nm where the optical parametric amplification suitable wavelength is. Its dispersion slop in the communication wavelength range is also relatively flat. Moreover, both nonlinear coefficient and model filed distribution were simulated, respectively.

  20. Nanoporous silicon oxide memory.

    PubMed

    Wang, Gunuk; Yang, Yang; Lee, Jae-Hwang; Abramova, Vera; Fei, Huilong; Ruan, Gedeng; Thomas, Edwin L; Tour, James M

    2014-08-13

    Oxide-based two-terminal resistive random access memory (RRAM) is considered one of the most promising candidates for next-generation nonvolatile memory. We introduce here a new RRAM memory structure employing a nanoporous (NP) silicon oxide (SiOx) material which enables unipolar switching through its internal vertical nanogap. Through the control of the stochastic filament formation at low voltage, the NP SiOx memory exhibited an extremely low electroforming voltage (∼ 1.6 V) and outstanding performance metrics. These include multibit storage ability (up to 9-bits), a high ON-OFF ratio (up to 10(7) A), a long high-temperature lifetime (≥ 10(4) s at 100 °C), excellent cycling endurance (≥ 10(5)), sub-50 ns switching speeds, and low power consumption (∼ 6 × 10(-5) W/bit). Also provided is the room temperature processability for versatile fabrication without any compliance current being needed during electroforming or switching operations. Taken together, these metrics in NP SiOx RRAM provide a route toward easily accessed nonvolatile memory applications. PMID:24992278

  1. Morphology modulated growth of bismuth tungsten oxide nanocrystals

    SciTech Connect

    Yao Shushan; Wei, Jiyong; Huang Baibiao Feng Shengyu; Zhang Xiaoyang; Qin Xiaoyan; Wang Peng; Wang Zeyan; Zhang Qi; Jing Xiangyang; Zhan Jie

    2009-02-15

    Two kinds of bismuth tungsten oxide nanocrystals were prepared by microwave hydrothermal method. The morphology modulation of nanocrystals synthesized with precursor suspension's pH varied from 0.25 (strong acid) to 10.05 (base) was studied. The 3D flower like aggregation of Bi{sub 2}WO{sub 6} nanoflakes was synthesized in acid precursor suspension and the nanooctahedron crystals of Bi{sub 3.84}W{sub 0.16}O{sub 6.24} were synthesized in alkalescent precursor. The dominant crystal is changed from Bi{sub 2}WO{sub 6} to Bi{sub 3.84}W{sub 0.16}O{sub 6.24} when the precursor suspension changes from acid to alkalescence. The growth mechanisms of Bi{sub 2}WO{sub 6} and Bi{sub 3.84}W{sub 0.16}O{sub 6.24} were attributed to the different solubility of WO{sub 4}{sup 2-} and [Bi{sub 2}O{sub 2}]{sup 2+} in precursor suspensions with various pH. For the decomposition of Rhodamine B (RhB) under visible light irradiation ({lambda}>400 nm), different morphology of Bi{sub 2}WO{sub 6} crystal samples obtained by microwavesolvothermal process showed different photocatalytic activity. - Graphical abstract: The morphology modulation of bismuth tungsten oxide nanocrystals synthesized by microwave hydrothermal method with precursor suspension's pH varied from 0.25 (strong acid) to 10.05 (base) was studied. The 3D flower like aggregation of Bi{sub 2}WO{sub 6} nanoflakes and nanooctahedron crystals of Bi{sub 3.84}W{sub 0.16}O{sub 6.24} were prepared. The growth mechanisms of Bi{sub 2}WO{sub 6} and Bi{sub 3.84}W{sub 0.16}O{sub 6.24} were attributed to the different precipitation ability and solubility of H{sub 2}WO{sub 4} and Bi(OH){sub 3} in precursor suspensions with various pH. The photocatalytic evaluation, via the decomposition of Rhodamine B (RhB) under visible light irradiation ({lambda}>420 nm), reveals that nanocrystalline Bi{sub 2}WO{sub 6} samples obtained in different condition exhibit different photocatalytic activities which depend on pH value of the precursor suspensions.

  2. Efficient water-splitting device based on a bismuth vanadate photoanode and thin-film silicon solar cells.

    PubMed

    Han, Lihao; Abdi, Fatwa F; van de Krol, Roel; Liu, Rui; Huang, Zhuangqun; Lewerenz, Hans-Joachim; Dam, Bernard; Zeman, Miro; Smets, Arno H M

    2014-10-01

    A hybrid photovoltaic/photoelectrochemical (PV/PEC) water-splitting device with a benchmark solar-to-hydrogen conversion efficiency of 5.2% under simulated air mass (AM) 1.5 illumination is reported. This cell consists of a gradient-doped tungsten-bismuth vanadate (W:BiVO4 ) photoanode and a thin-film silicon solar cell. The improvement with respect to an earlier cell that also used gradient-doped W:BiVO4 has been achieved by simultaneously introducing a textured substrate to enhance light trapping in the BiVO4 photoanode and further optimization of the W gradient doping profile in the photoanode. Various PV cells have been studied in combination with this BiVO4 photoanode, such as an amorphous silicon (a-Si:H) single junction, an a-Si:H/a-Si:H double junction, and an a-Si:H/nanocrystalline silicon (nc-Si:H) micromorph junction. The highest conversion efficiency, which is also the record efficiency for metal oxide based water-splitting devices, is reached for a tandem system consisting of the optimized W:BiVO4 photoanode and the micromorph (a-Si:H/nc-Si:H) cell. This record efficiency is attributed to the increased performance of the BiVO4 photoanode, which is the limiting factor in this hybrid PEC/PV device, as well as better spectral matching between BiVO4 and the nc-Si:H cell. PMID:25138735

  3. Oxidation mechanism of formic acid on the bismuth adatom-modified Pt(111) surface.

    PubMed

    Perales-Rondón, Juan Victor; Ferre-Vilaplana, Adolfo; Feliu, Juan M; Herrero, Enrique

    2014-09-24

    In order to improve catalytic processes, elucidation of reaction mechanisms is essential. Here, supported by a combination of experimental and computational results, the oxidation mechanism of formic acid on Pt(111) electrodes modified by the incorporation of bismuth adatoms is revealed. In the proposed model, formic acid is first physisorbed on bismuth and then deprotonated and chemisorbed in formate form, also on bismuth, from which configuration the C-H bond is cleaved, on a neighbor Pt site, yielding CO2. It was found computationally that the activation energy for the C-H bond cleavage step is negligible, which was also verified experimentally. PMID:25188779

  4. Investigation of solution-processed bismuth-niobium-oxide films

    SciTech Connect

    Inoue, Satoshi; Ariga, Tomoki; Matsumoto, Shin; Onoue, Masatoshi; Miyasako, Takaaki; Tokumitsu, Eisuke; Shimoda, Tatsuya; Chinone, Norimichi; Cho, Yasuo

    2014-10-21

    The characteristics of bismuth-niobium-oxide (BNO) films prepared using a solution process were investigated. The BNO film annealed at 550°C involving three phases: an amorphous phase, Bi₃NbO₇ fluorite microcrystals, and Nb-rich cubic pyrochlore microcrystals. The cubic pyrochlore structure, which was the main phase in this film, has not previously been reported in BNO films. The relative dielectric constant of the BNO film was approximately 140, which is much higher than that of a corresponding film prepared using a conventional vacuum sputtering process. Notably, the cubic pyrochlore microcrystals disappeared with increasing annealing temperature and were replaced with triclinic β-BiNbO₄ crystals at 590°C. The relative dielectric constant also decreased with increasing annealing temperature. Therefore, the high relative dielectric constant of the BNO film annealed at 550°C is thought to result from the BNO cubic pyrochlore structure. In addition, the BNO films annealed at 500°C contained approximately 6.5 atm.% carbon, which was lost at approximately 550°C. This result suggests that the carbon in the BNO film played an important role in the formation of the cubic pyrochlore structure.

  5. Bismuth Oxide: A New Lithium-Ion Battery Anode

    PubMed Central

    Li, Yuling; Trujillo, Matthias A.; Fu, Engang; Patterson, Brian; Fei, Ling; Xu, Yun; Deng, Shuguang; Smirnov, Sergei; Luo, Hongmei

    2013-01-01

    Bismuth oxide directly grown on nickel foam (p-Bi2O3/Ni) was prepared by a facile polymer-assisted solution approach and was used directly as a lithium-ion battery anode for the first time. The Bi2O3 particles were covered with thin carbon layers, forming network-like sheets on the surface of the Ni foam. The binder-free p-Bi2O3/Ni shows superior electrochemical properties with a capacity of 668 mAh/g at a current density of 800 mA/g, which is much higher than that of commercial Bi2O3 powder (c-Bi2O3) and Bi2O3 powder prepared by the polymer-assisted solution method (p-Bi2O3). The good performance of p-Bi2O3/Ni can be attributed to higher volumetric utilization efficiency, better connection of active materials to the current collector, and shorter lithium ion diffusion path. PMID:24416506

  6. Structure and resistivity of bismuth nanobelts in situ synthesized on silicon wafer through an ethanol-thermal method

    NASA Astrophysics Data System (ADS)

    Gao, Zheng; Qin, Haiming; Yan, Tao; Liu, Hong; Wang, Jiyang

    2011-12-01

    Bismuth nanobelts in situ grown on a silicon wafer were synthesized through an ethanol-thermal method without any capping agent. The structure of the bismuth belt-silicon composite nanostructure was characterized by scanning electron microscope, energy-dispersive X-ray spectroscopy, and high resolution transmission electron microscope. The nanobelt is a multilayered structure 100-800 nm in width and over 50 μm in length. One layer has a thickness of about 50 nm. A unique sword-like nanostructure is observed as the initial structure of the nanobelts. From these observations, a possible growth mechanism of the nanobelt is proposed. Current-voltage property measurements indicate that the resistivity of the nanobelts is slightly larger than that of the bulk bismuth material.

  7. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect

    Kovačević, Goran Pivac, Branko

    2014-01-28

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  8. Growth of silicon bump induced by swift heavy ion at the silicon oxide-silicon interface

    SciTech Connect

    Carlotti, J.-F.; Touboul, A.D.; Ramonda, M.; Caussanel, M.; Guasch, C.; Bonnet, J.; Gasiot, J.

    2006-01-23

    Thin silicon oxide layers on silicon substrates are investigated by scanning probe microscopy before and after irradiation with 210 MeV Au+ ions. After irradiation and complete chemical etching of the silicon oxide layer, silicon bumps grown on the silicon surface are observed. It is shown that each impinging ion induces one silicon bump at the interface. This observation is consistent with the thermal spike theory. Ion energy loss is transferred to the oxide and induces local melting. Silicon-bump formation is favored when the oxide and oxide-silicon interface are silicon rich.

  9. Dextran coated bismuth-iron oxide nanohybrid contrast agents for computed tomography and magnetic resonance imaging

    PubMed Central

    Naha, Pratap C.; Zaki, Ajlan Al; Hecht, Elizabeth; Chorny, Michael; Chhour, Peter; Blankemeyer, Eric; Yates, Douglas M.; Witschey, Walter R. T.; Litt, Harold I.; Tsourkas, Andrew; Cormode, David P.

    2014-01-01

    Bismuth nanoparticles have been proposed as a novel CT contrast agent, however few syntheses of biocompatible bismuth nanoparticles have been achieved. We herein report the synthesis of composite bismuth-iron oxide nanoparticles (BION) that are based on a clinically approved, dextran-coated iron oxide formulation; the particles have the advantage of acting as contrast agents for both CT and MRI. BION were synthesized and characterized using various analytical methods. BION CT phantom images revealed that the X-ray attenuation of the different formulations was dependent upon the amount of bismuth present in the nanoparticle, while T2-weighted MRI contrast decreased with increasing bismuth content. No cytotoxicity was observed in Hep G2 and BJ5ta cells after 24 hours incubation with BION. The above properties, as well as the yield of synthesis and bismuth inclusion efficiency, led us to select the Bi-30 formulation for in vivo experiments, performed in mice using a micro-CT and a 9.4 T MRI system. X-ray contrast was observed in the heart and blood vessels over a 2 hour period, indicating that Bi-30 has a prolonged circulation half-life. Considerable signal loss in T2-weighted MR images was observed in the liver compared to pre-injection scans. Evaluation of the biodistribution of Bi-30 revealed that bismuth is excreted via the urine, with significant concentrations found in the kidneys and urine. In vitro experiments confirmed the degradability of Bi-30. In summary, dextran coated BION are biocompatible, biodegradable, possess strong X-ray attenuation properties and also can be used as T2-weighted MR contrast agents. PMID:25485115

  10. Catalytic oxidation of propylene--7. Use of temperature programmed reoxidation to characterize. gamma. -bismuth molybdate

    SciTech Connect

    Uda, T.; Lin, T.T.; Keulks, G.W.

    1980-03-01

    Temperature-programed reoxidation of propylene-reduced ..gamma..-Bi/sub 2/MoO/sub 6/ revealed a low-temperature peak (LTP) at 158/sup 0/C and a high-temperature peak (HTP) at 340/sup 0/C. Auger spectroscopy and X-ray diffraction of reduced and partially or completely reoxidized bismuth molybdate showed that at the LTP, molybdenum(IV) is oxidized to molybdenum(VI) and bismuth, from the metallic state to an oxidation state between zero and three, and that the HTP is associated with the complete oxidation of bismuth to bismuth(III). Activity tests for propylene oxidation showed lower acrolein formation on the catalyst, on which only the LTP was reoxidized than on catalysts on which both peaks were reoxidized. The reoxidation kinetics of the catalyst under conditions corresponding to the LTP showed an activation energy of 22.9 kcal/mole below 170/sup 0/C and near zero above 170/sup 0/C; the break in the Arrhenius plot of reoxidation of the catalyst under conditions corresponding to the HTP was at 400/sup 0/C, with activation energies of 46 kcal/mole at lower and near zero at higher temperatures. Propylene oxidation was apparently rate-limited by the HTP reoxidation process below 400/sup 0/C and by allylic hydrogen abstraction above 400/sup 0/C.

  11. The effect and mechanism of bismuth doped lead oxide on the performance of lead-acid batteries

    NASA Astrophysics Data System (ADS)

    Chen, H. Y.; Wu, L.; Ren, C.; Luo, Q. Z.; Xie, Z. H.; Jiang, X.; Zhu, S. P.; Xia, Y. K.; Luo, Y. R.

    Flooded automotive and motorcycle lead-acid batteries were manufactured from three kinds of lead oxides including electrolyzed pure lead (99.99 wt.% Pb) oxide, electrolyzed pure lead oxide doped with Bi 2O 3 (0.02 wt.% Bi 2O 3) and bismuth-bearing refined lead (0.02 wt.% Bi) oxide. The first cranking and cold cranking curves of the automotive batteries show that there is no obvious difference among the above lead oxides. Bismuth in lead oxide does not affect the water loss of flooded batteries. However, bismuth results in the improvement of capacity and charge-acceptance capability. In discharge, the positive voltage versus cadmium of plates with bismuth decreases more slowly than that of plates without bismuth. In order to investigate the mechanism of the function of bismuth, three other kinds of test electrodes were prepared from electrolyzed pure lead (99.99 wt.% Pb) oxide, electrolyzed pure lead oxide doped 0.02 wt.% Bi 2O 3 and electrolyzed pure lead oxide doped 0.06 wt.% Bi 2O 3. The cyclic voltammetry curve shows that bismuth has no significant influence on the electrochemical behavior of the positive active-material. There is an opposite result concerning the cathodic polarization curves between bismuth doped in the electrode and Bi 3+ ion doped in the electrolyte. Bismuth doped in the electrode results in a decrease of the hydrogen overpotential. Conversely, Bi 3+ ion doped in the electrolyte results is an increase. The chemical analysis confirms that a trace of Bi 3+ ion exists in sulfuric acid solution (e.g. plates soaking, after formation, after cycling). A higher porosity is observed in the positive active-material containing bismuth by SEM technique. SEM morphology shows that needle-like crystals begin to occur after a few cycles. X-ray diffraction phase analysis proves that the amount of α-PbO 2 is increased by doping bismuth in to lead oxide. The existing forms, chemical characteristics and electrochemical reactions of bismuth during manufacture

  12. Promotional Effects of Bismuth on the Formation of Platinum-Bismuth Nanowires Network and the Electrocatalytic Activity toward Ethanol Oxidation

    SciTech Connect

    Du, W.; Su, D.; Wang, Q.; Frenkel, A.I.; Teng, X.

    2011-01-11

    Electrocatalytic activities of Pt and their alloys toward small organic molecules oxidation are highly dependent on their morphology, chemical composition, and electronic structure. Here, we report the synthesis of dendrite-like Pt{sub 95}Bi{sub 5}, Pt{sub 83}Bi{sub 17}, and Pt{sub 76}Bi{sub 24} nanowires network with a high aspect ratio (up to 68). The electronic structure and heterogeneous crystalline structure have been studied using combined techniques, including aberration-corrected scanning transmission electron microscopy (STEM) and X-ray absorption near-edge structure (XANES) spectroscopy. Bismuth-oriented attachment growth mechanism has been proposed for the anisotropic growth of Pt/Bi. The electrochemical activities of Pt/Bi nanowires network toward ethanol oxidations have been tested. In particular, the as-made Pt{sub 95}Bi{sub 5} appears to have superior activity toward ethanol oxidation in comparison with the commercial Pt/C catalyst. The reported promotional effect of Bi on the formation of Pt/Bi and electrochemical activities will be important to design effective catalysts for ethanol fuel cell application.

  13. Promotional Effects of Bismuth on the Formation of Platinum-Bismuth Nanowires Network and the Electrocatalytic Activity toward Ethanol Oxidation

    SciTech Connect

    X Teng; W Du; D Su; Q Wang; A Frenkel

    2011-12-31

    Electrocatalytic activities of Pt and their alloys toward small organic molecules oxidation are highly dependent on their morphology, chemical composition, and electronic structure. Here, we report the synthesis of dendrite-like Pt{sub 95}Bi{sub 5}, Pt{sub 83}Bi{sub 17}, and Pt{sub 76}Bi{sub 24} nanowires network with a high aspect ratio (up to 68). The electronic structure and heterogeneous crystalline structure have been studied using combined techniques, including aberration-corrected scanning transmission electron microscopy (STEM) and X-ray absorption near-edge structure (XANES) spectroscopy. Bismuth-oriented attachment growth mechanism has been proposed for the anisotropic growth of Pt/Bi. The electrochemical activities of Pt/Bi nanowires network toward ethanol oxidations have been tested. In particular, the as-made Pt{sub 95}Bi{sub 5} appears to have superior activity toward ethanol oxidation in comparison with the commercial Pt/C catalyst. The reported promotional effect of Bi on the formation of Pt/Bi and electrochemical activities will be important to design effective catalysts for ethanol fuel cell application.

  14. Efficient solar water splitting by enhanced charge separation in a bismuth vanadate-silicon tandem photoelectrode

    NASA Astrophysics Data System (ADS)

    Abdi, Fatwa F.; Han, Lihao; Smets, Arno H. M.; Zeman, Miro; Dam, Bernard; van de Krol, Roel

    2013-07-01

    Metal oxides are generally very stable in aqueous solutions and cheap, but their photochemical activity is usually limited by poor charge carrier separation. Here we show that this problem can be solved by introducing a gradient dopant concentration in the metal oxide film, thereby creating a distributed n+-n homojunction. This concept is demonstrated with a low-cost, spray-deposited and non-porous tungsten-doped bismuth vanadate photoanode in which carrier-separation efficiencies of up to 80% are achieved. By combining this state-of-the-art photoanode with an earth-abundant cobalt phosphate water-oxidation catalyst and a double- or single-junction amorphous Si solar cell in a tandem configuration, stable short-circuit water-splitting photocurrents of ~4 and 3 mA cm-2, respectively, are achieved under 1 sun illumination. The 4 mA cm-2 photocurrent corresponds to a solar-to-hydrogen efficiency of 4.9%, which is the highest efficiency yet reported for a stand-alone water-splitting device based on a metal oxide photoanode.

  15. Oxidative dehydrogenation dimerization of propylene over bismuth oxide: kinetic and mechanistic studies

    SciTech Connect

    White, M.G.; Hightower, J.W.

    1983-07-01

    Classical kinetic experiments together with pulse microreactor studies involving deuterium and carbon-13-labeled isotopic tracers were used to investigate the oxidative dehydrogenation dimerization (OXDD) of propylene to 1,5-hexadiene and benzene over bismuth oxide between 748 and 898/sup 0/K. The kinetic data, which indicated that the OXDD reaction is of variable order with respect to oxygen and propylene concentrations, could be fit to rate equations based on either the Langmuir-Hinshelwood model or the Mars-van Krevelen model, although the former gave more linear Arrhenius plots. A significant kinetic isotope effect (k/sub H//k/sub D/ = 1.7 at 873/sup 0/K) shows that the rate-limiting step for the OXDD reaction involves C-H cleavage, and there is only a small amount of H/D scrambling among reactant and product molecules. Analysis of liquid products by infrared spectroscopy indicated that both 1,5-hexadiene and 1,3-cyclohexadiene are stable reaction intermediates; microreactor results involving unlabeled propylene, 1,5-hexadiene, 1,3-cyclohexadiene, and 1,4-cyclohexadiene as reactants confirmed the infrared findings. Pulse microreactor experiments with /sup 13/C-labeled propylene clearly showed that deep oxidation (complete combustion) occurs via a consecutive-parallel network involving the partially oxidized intermediates as well as the starting propylene. Changes in the particle size do not alter the overall activity, although larger particles have lower selectivities for C/sub 6/ products than do smaller particles.

  16. Silicon oxide films grown in microwave discharge

    NASA Technical Reports Server (NTRS)

    Kraitchman, J.

    1968-01-01

    Silicon oxide films thicker than 1000 angstrom are produced in the dense plasma of a microwave discharge. The oxide growth is characterized by a rate limiting diffusion process modified by sputtering effects produced by the discharge. Silicon is rapidly oxidized at temperatures estimated to be 500 degrees C or lower.

  17. Separation of Americium in High Oxidation States from Curium Utilizing Sodium Bismuthate.

    PubMed

    Richards, Jason M; Sudowe, Ralf

    2016-05-01

    A simple separation of americium from curium would support closure of the nuclear fuel cycle, assist in nuclear forensic analysis, and allow for more accurate measurement of neutron capture properties of (241)Am. Methods for the separation of americium from curium are however complicated and time-consuming due to the similar chemical properties of these elements. In this work a novel method for the separation of americium from curium in nitric acid media was developed using sodium bismuthate to perform both the oxidation and separation. Sodium bismuthate is shown to be a promising material for performing a simple and rapid separation. Curium is more strongly retained than americium on the undissolved sodium bismuthate at nitric acid concentrations below 1.0 M. A separation factor of ∼90 was obtained in 0.1 M nitric acid. This separation factor is achieved within the first minute of contact and is maintained for at least 2 h of contact. Separations using sodium bismuthate were performed using solid-liquid extraction as well as column chromatography. PMID:27079565

  18. Synthesis of α-Bismuth oxide using solution combustion method and its photocatalytic properties

    NASA Astrophysics Data System (ADS)

    Astuti, Y.; Fauziyah, A.; Nurhayati, S.; Wulansari, A. D.; Andianingrum, R.; Hakim, A. R.; Bhaduri, G.

    2016-02-01

    The monoclinic bismuth oxide was prepared by the solution combustion method using bismuthyl nitrate as the raw material and citric acid as fuel. The synthesis process consisted of the formation of a clear transparent solution and the formation of white powder after heating the mixture at 250 °C for 2 hours. The yellow pale crystalline materials were obtained after calcination of the white powder at 600 °C for 80 minutes. Furthermore, the photocatalytic activity of the product was also studied using methyl orange as a model pollutant. The result showed that the coral reef-like bismuth oxide was able to degrade 50 mL methyl orange (5 ppm) by 37.8% within 12 hours irradiation using 75-watt tungsten lamp.

  19. Ion-exchange chromatographic separation of anions on hydrated bismuth oxide impregnated papers

    SciTech Connect

    Dabral, S.K.; Muktawat, K.P.S.; Rawat, J.P.

    1988-04-01

    A comparative study of the chromatographic behavior of anions, iodide, sulfide, phosphate, arsenate, arsenite, vanadate, chromate, dichromate, thiosulfate, thiocyanate, ferricyanide and ferrocyanide on papers impregnated with hydrated bismuth oxide and untreated Whatman no.1 paper has been made by employing identical aqueous, non-aqueous and mixed solvent system. Sharp and compact spots were obtained with impregnated papers whereas the opposite applied to plain papers. Various analytically important binary and ternary separations are reported.

  20. Method of forming buried oxide layers in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  1. Roads to ultrathin silicon oxides

    NASA Astrophysics Data System (ADS)

    Morgen, P.; Bahari, A.; Robenhagen, U.; Andersen, J. F.; Hansen, J.-K.; Pedersen, K.; Rao, M. G.; Li, Z. S.

    2005-01-01

    Ultrathin gate dielectrics for complementary metal-oxide-semiconductor (CMOS) devices, with suitable structural and electrical properties, are crucial for the further development of silicon based microelectronics. The effective (SiO2-equivalent) thickness of 10 A˚ or below needed in the next generations of CMOS devices has been found too low to prevent tunneling, and leakage, with current processes for SiO2 based gate insulators. Before abandoning SiO2 completely, however, there are good reasons to look for improved procedures or alternative processes to grow or form ultrathin SiO2 films on silicon, and possible improvements through the controlled addition of nitrogen. The present article initially describes an attempt to grow ultrathin oxides in a furnace, but this was limited to 50-A˚-thick layers or above. It then unveils some particularly simple, easily controlled, low-thermal budget, low-pressure based processes for thinner oxide layers, which have not been met earlier. These later processes are all done in an ultrahigh vacuum (UHV) based environment, starting from a clean and perfectly ordered Si surface. Thus we formed the thinnest possible (~4 A˚) uniformly covering oxide layers on the Si(111) and Si(001) surfaces. They are made very simply from cycles of oxygen adsorption at room temperature and short anneals, and are self-saturating at this thickness. Following these processes we explored isothermal methods in UHV at low temperatures and pressures. Such processes, at low pressures, were found to lead to a universal, self-limiting growth of an approximately 7-A˚-thick oxide at a range of temperatures between 300 and 700 °C. Further, up to about 10 A˚ oxides are grown in a series of steps, in each of which a layer of freshly deposited Cs on top of already grown oxide is retaining oxygen on this otherwise passivated surface. The Cs layer also catalyzes oxidation during a subsequent rapid annealing step. Higher thicknesses (up to 50 A˚) are obtained by

  2. High performance zirconia-bismuth oxide nanocomposite electrolytes for lower temperature solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Joh, Dong Woo; Park, Jeong Hwa; Kim, Do Yeub; Yun, Byung-Hyun; Lee, Kang Taek

    2016-07-01

    We develop a novel nanocomposite electrolyte, consisting of yttria-stabilized zirconia (YSZ) and erbia-stabilized bismuth oxide (ESB). The 20 mol% ESB-incorporated YSZ composite (20ESB-YSZ) achieves the high density (>97%) at the low sintering temperature of 800 °C. The microstructural analysis of 20ESB-YSZ reveals the characteristic nanocomposite structure of the highly percolated ESB phase at the YSZ grain boundaries (a few ∼ nm thick). The ionic conductivity of 20ESB-YSZ is increased by 5 times compared to that of the conventional YSZ due to the fast oxygen ion transport along the ESB phase. Moreover, this high conductivity is maintained up to 580 h, indicating high stability of the ESB-YSZ nanocomposite. In addition, the oxygen reduction reaction at the composite electrolyte/cathode interface is effectively enhanced (∼70%) at the temperature below 650 °C, mainly due to the fast dissociative oxygen adsorption on the ESB surface as well as the rapid oxygen ion incorporation into the ESB lattice. Thus, we believe this ESB-YSZ nanocomposite is a promising electrolyte for high performance solid oxide fuel cells at reduced temperatures.

  3. Influence of the ionization-energy losses of high-energy bismuth ions on the development of helium blisters in silicon

    SciTech Connect

    Reutov, V. F. Dmitriev, S. N.; Sohatsky, A. S.; Zaluzhnyi, A. G.

    2015-10-15

    Understanding the behavior of helium in solids under conditions of intense ionizing radiation is of particular interest in solving many problems of nuclear, fusion, and space materials science and also in microelectronics. The observed effect of suppressing the formation of helium blisters on the surface of helium ion-doped silicon as a result of irradiation with high-energy bismuth ions is reported in this publication. It is suggested that a possible decrease in the concentration of helium atoms in silicon is due to their radiationinduced desorption from the area of doping in terms of the high-impact ionization of bismuth ions.

  4. A Ferroelectric Oxide Made Directly on Silicon

    SciTech Connect

    Warusawithana, M.; Cen, C; Sleasman, C; Woicik, J; Li, Y; Fitting Kourkoutis, L; Klug, J; Li, H; Ryan, P; et. al.

    2009-01-01

    Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering technological advancement. With fundamental limits to this technology close at hand, alternatives to silicon dioxide are being pursued to enable new functionality and device architectures. We achieved ferroelectric functionality in intimate contact with silicon by growing coherently strained strontium titanate (SrTiO{sub 3}) films via oxide molecular beam epitaxy in direct contact with silicon, with no interfacial silicon dioxide. We observed ferroelectricity in these ultrathin SrTiO{sub 3} layers by means of piezoresponse force microscopy. Stable ferroelectric nanodomains created in SrTiO{sub 3} were observed at temperatures as high as 400 kelvin.

  5. Synthesis and photocatalytic properties of bismuth titanate with different structures via oxidant peroxo method (OPM).

    PubMed

    Nogueira, André E; Longo, Elson; Leite, Edson R; Camargo, Emerson R

    2014-02-01

    Bismuth titanate (Bi4Ti3O12 and Bi12TiO20) powders were synthesized by the Oxidant Peroxide Method (OPM), and the effect of temperatures on physical and chemical properties of particles was investigated. The results showed that the morphology and average particle size of materials can be successfully controlled by adjusting the temperature. The samples after calcination were characterized by X-ray diffractometry, transmission electron microscopy, diffuse reflectance spectroscopy, Raman spectroscopy, and BET isotherms. The photocatalytic activity of materials was also evaluated by studying the degradation of 10ppm aqueous rhodamine B dye under ultraviolet radiation. PMID:24267334

  6. Effect of Bismuth Oxide on the Microstructure and Electrical Conductivity of Yttria Stabilized Zirconia

    PubMed Central

    Liu, Liwei; Zhou, Zheng; Tian, He; Li, Jixue

    2016-01-01

    Bismuth oxide (Bi2O3)-doped yttria-stabilized zirconia (YSZ) were prepared via the solid state reaction method. X-ray diffraction and electron diffraction spectroscopy results indicate that doping with 2 mol% Bi2O3 and adding 10 mol% yttria result in a stable zirconia cubic phase. Adding Bi2O3 as a dopant increases the density of zirconia to above 96%, while reducing its normal sintering temperature by approximately 250 °C. Moreover, electrical impedance analyses show that adding Bi2O3 enhances the conductivity of zirconia, improving its capability as a solid electrolyte for intermediate or even lower temperatures. PMID:26985895

  7. Effect of Bismuth Oxide on the Microstructure and Electrical Conductivity of Yttria Stabilized Zirconia.

    PubMed

    Liu, Liwei; Zhou, Zheng; Tian, He; Li, Jixue

    2016-01-01

    Bismuth oxide (Bi2O3)-doped yttria-stabilized zirconia (YSZ) were prepared via the solid state reaction method. X-ray diffraction and electron diffraction spectroscopy results indicate that doping with 2 mol% Bi2O3 and adding 10 mol% yttria result in a stable zirconia cubic phase. Adding Bi2O3 as a dopant increases the density of zirconia to above 96%, while reducing its normal sintering temperature by approximately 250°C. Moreover, electrical impedance analyses show that adding Bi2O3 enhances the conductivity of zirconia, improving its capability as a solid electrolyte for intermediate or even lower temperatures. PMID:26985895

  8. Laser induced oxidation and optical properties of bismuth telluride nanoplates

    NASA Astrophysics Data System (ADS)

    Ye, Zhipeng; Sucharitakul, Sukrit; Keiser, Courtney; Kidd, Tim E.; Gao, Xuan P. A.; He, Rui

    2015-03-01

    Bi-Te nanoplates (NPs) grown by low pressure vapor transport method were studied by Raman spectroscopy, atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDS), and Auger electron spectroscopy (AES). We find that the surface of relatively thick (more than tens of nanometers) Bi2Te3 NPs is oxidized in the air and forms a bump under heating with moderate laser power, as revealed by the emergence of Raman lines characteristic of Bi2O3 and TeO2 and characterization by AFM and EDS. Further increase of laser power burns holes on the surface of the NPs. Thin (thicknesses less than 20 nm) NPs with stoichiometry different from Bi2Te3 were also studied. Raman lines from non-stoichiometric NPs are different from those of stoichiometric ones. Thin NPs with the same thickness but different stoichiometries show different color contrast compared to the substrate in the optical image. This indicates that the optical absorption coefficient in thin Bi-Te NPs strongly depends on their stoichiometry. Controlling the stoichiometry in the Bi-Te NP growth is thus very important for their thermoelectric, electronic, and optical device applications. Supported by American Chemical Society Petroleum Research Fund (Grant 53401-UNI10), NSF (No. DMR-1206530, No. DMR-1410496, DMR-1151534), UNI Faculty Summer Fellowship and a UNI capacity building grant.

  9. Bismuth doped lanthanum ferrite perovskites as novel cathodes for intermediate-temperature solid oxide fuel cells.

    PubMed

    Li, Mei; Wang, Yao; Wang, Yunlong; Chen, Fanglin; Xia, Changrong

    2014-07-23

    Bismuth is doped to lanthanum strontium ferrite to produce ferrite-based perovskites with a composition of La(0.8-x)Bi(x)Sr0.2FeO(3-δ) (0 ≤ x ≤ 0.8) as novel cathode material for intermediate-temperature solid oxide fuel cells. The perovskite properties including oxygen nonstoichiometry coefficient (δ), average valence of Fe, sinterability, thermal expansion coefficient, electrical conductivity (σ), oxygen chemical surface exchange coefficient (K(chem)), and chemical diffusion coefficient (D(chem)) are explored as a function of bismuth content. While σ decreases with x due to the reduced Fe(4+) content, D(chem) and K(chem) increase since the oxygen vacancy concentration is increased by Bi doping. Consequently, the electrochemical performance is substantially improved and the interfacial polarization resistance is reduced from 1.0 to 0.10 Ω cm(2) at 700 °C with Bi doping. The perovskite with x = 0.4 is suggested as the most promising composition as solid oxide fuel cell cathode material since it has demonstrated high electrical conductivity and low interfacial polarization resistance. PMID:24971668

  10. Phase evolution of magnetite nanocrystals on oxide supports via template-free bismuth ferrite precursor approach

    NASA Astrophysics Data System (ADS)

    Cheung, Jeffrey; Bogle, Kashinath; Cheng, Xuan; Sullaphen, Jivika; Kuo, Chang-Yang; Chen, Ying-Jiun; Lin, Hong-Ji; Chen, Chien-Te; Yang, Jan-Chi; Chu, Ying-Hao; Valanoor, Nagarajan

    2012-11-01

    This report investigates the phase evolution pathway of magnetite nanocrystal synthesis on oxide-supported substrates. A template-free phase separation approach, which exploits the thermodynamic instability of ternary perovskite BiFeO3 and inherent volatility of bismuth oxide in low oxygen pressure and high temperature is presented. The formation of an intermediate hematite nanocrystal phase is found as a key step that controls the eventual size and morphology of the magnetite nanocrystals. X-ray absorption spectra measurements and X-ray magnetic circular dichroism confirm that the spectral fingerprints of the magnetite nanocrystals match with that of bulk crystals. Magnetic measurements show that magnetic anisotropy is directly attributed to the nanocrystal morphology.

  11. Tribochemistry of Bismuth and Bismuth Salts for Solid Lubrication.

    PubMed

    Gonzalez-Rodriguez, Pablo; van den Nieuwenhuijzen, Karin J H; Lette, Walter; Schipper, Dik J; Ten Elshof, Johan E

    2016-03-23

    One of the main trends in the past decades is the reduction of wastage and the replacement of toxic compounds in industrial processes. Some soft metallic particles can be used as nontoxic solid lubricants in high-temperature processes. The behavior of bismuth metal particles, bismuth sulfide (Bi2S3), bismuth sulfate (Bi2(SO4)3), and bismuth oxide (Bi2O3) as powder lubricants was studied in a range of temperatures up to 580 °C. The mechanical behavior was examined using a high-temperature pin-on-disc setup, with which the friction force between two flat-contact surfaces was recorded. The bismuth-lubricated surfaces showed low coefficients of friction (μ ≈ 0.08) below 200 °C. Above the melting temperature of the metal powder at 271 °C, a layer of bismuth oxide developed and the friction coefficient increased. Bismuth oxide showed higher friction coefficients at all temperatures. Bismuth sulfide exhibited partial oxidation upon heating but the friction coefficient decreased to μ ≈ 0.15 above 500 °C, with the formation of bismuth oxide-sulfate, while some bismuth sulfate remained. All surfaces were studied by X-ray diffraction (XRD), confocal microscopy, high-resolution scanning electron microscopy (HR-SEM), and energy-dispersive X-ray spectroscopy (EDS). This study reveals how the partial oxidation of bismuth compounds at high temperatures affects their lubrication properties, depending on the nature of the bismuth compound. PMID:26936490

  12. Single crystal functional oxides on silicon

    PubMed Central

    Bakaul, Saidur Rahman; Serrao, Claudy Rayan; Lee, Michelle; Yeung, Chun Wing; Sarker, Asis; Hsu, Shang-Lin; Yadav, Ajay Kumar; Dedon, Liv; You, Long; Khan, Asif Islam; Clarkson, James David; Hu, Chenming; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2016-01-01

    Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon. PMID:26853112

  13. Incorporation of thiosemicarbazide in Amberlite IRC-50 for separation of astatine from alpha-irradiated bismuth oxide.

    PubMed

    Roy, Kamalika; Basu, S; Ramaswami, A; Nayak, Dalia; Lahiri, Susanta

    2004-06-01

    A chelating resin was synthesized by incorporating thiosemicarbazide into Amberlite IRC-50, a weakly acidic polymer. Astatine radionuclides produced by alpha-irradiating bismuth oxide were separated using the newly synthesized chelating resin. The resin showed high selectivity for astatine. The adsorbed astatine was recovered using 0.1M EDTA at pH approximately 10. PMID:15110342

  14. Characterization of oxide layers grown on D9 austenitic stainless steel in lead bismuth eutectic

    NASA Astrophysics Data System (ADS)

    Hosemann, P.; Hawley, M.; Koury, D.; Swadener, J. G.; Welch, J.; Johnson, A. L.; Mori, G.; Li, N.

    2008-04-01

    Lead bismuth eutectic (LBE) is a possible coolant for fast reactors and targets in spallation neutron sources. Its low melting point, high evaporation point, good thermal conductivity, low reactivity, and good neutron yield make it a safe and high performance coolant in radiation environments. The disadvantage is that it is a corrosive medium for most steels and container materials. This study was performed to evaluate the corrosion behavior of the austenitic stainless steel D9 in oxygen controlled LBE. In order to predict the corrosion behavior of steel in this environment detailed analyses have to be performed on the oxide layers formed on these materials and various other relevant materials upon exposure to LBE. In this study the corrosion/oxidation of D9 stainless steel in LBE was investigated in great detail. The oxide layers formed were characterized using atomic force microscopy, magnetic force microscopy, nanoindentation, and scanning electron microscopy with wavelength-dispersive spectroscopy (WDS) to understand the corrosion and oxidation mechanisms of D9 stainless steel in contact with the LBE. What was previously believed to be a simple double oxide layer was identified here to consist of at least 4 different oxide layers. It was found that the inner most oxide layer takes over the grain structure of what used to be the bulk steel material while the outer oxide layer consists of freshly grown oxides with a columnar structure. These results lead to a descriptive model of how these oxide layers grow on this steel under the harsh environments encountered in these applications.

  15. Oxide driven strength evolution of silicon surfaces

    SciTech Connect

    Grutzik, Scott J.; Zehnder, Alan T.; Milosevic, Erik; Boyce, Brad L.

    2015-11-21

    Previous experiments have shown a link between oxidation and strength changes in single crystal silicon nanostructures but provided no clues as to the mechanisms leading to this relationship. Using atomic force microscope-based fracture strength experiments, molecular dynamics modeling, and measurement of oxide development with angle resolved x-ray spectroscopy we study the evolution of strength of silicon (111) surfaces as they oxidize and with fully developed oxide layers. We find that strength drops with partial oxidation but recovers when a fully developed oxide is formed and that surfaces intentionally oxidized from the start maintain their high initial strengths. MD simulations show that strength decreases with the height of atomic layer steps on the surface. These results are corroborated by a completely separate line of testing using micro-scale, polysilicon devices, and the slack chain method in which strength recovers over a long period of exposure to the atmosphere. Combining our results with insights from prior experiments we conclude that previously described strength decrease is a result of oxidation induced roughening of an initially flat silicon (1 1 1) surface and that this effect is transient, a result consistent with the observation that surfaces flatten upon full oxidation.

  16. Oxide driven strength evolution of silicon surfaces

    NASA Astrophysics Data System (ADS)

    Grutzik, Scott J.; Milosevic, Erik; Boyce, Brad L.; Zehnder, Alan T.

    2015-11-01

    Previous experiments have shown a link between oxidation and strength changes in single crystal silicon nanostructures but provided no clues as to the mechanisms leading to this relationship. Using atomic force microscope-based fracture strength experiments, molecular dynamics modeling, and measurement of oxide development with angle resolved x-ray spectroscopy we study the evolution of strength of silicon (111) surfaces as they oxidize and with fully developed oxide layers. We find that strength drops with partial oxidation but recovers when a fully developed oxide is formed and that surfaces intentionally oxidized from the start maintain their high initial strengths. MD simulations show that strength decreases with the height of atomic layer steps on the surface. These results are corroborated by a completely separate line of testing using micro-scale, polysilicon devices, and the slack chain method in which strength recovers over a long period of exposure to the atmosphere. Combining our results with insights from prior experiments we conclude that previously described strength decrease is a result of oxidation induced roughening of an initially flat silicon (1 1 1) surface and that this effect is transient, a result consistent with the observation that surfaces flatten upon full oxidation.

  17. Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances.

    PubMed

    van Sebille, Martijn; Allebrandi, Jort; Quik, Jim; van Swaaij, René A C M M; Tichelaar, Frans D; Zeman, Miro

    2016-12-01

    We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step. PMID:27492439

  18. Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances

    NASA Astrophysics Data System (ADS)

    van Sebille, Martijn; Allebrandi, Jort; Quik, Jim; van Swaaij, René A. C. M. M.; Tichelaar, Frans D.; Zeman, Miro

    2016-08-01

    We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step.

  19. Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Walder, Cordula; Kellermann, Martin; Wendler, Elke; Rensberg, Jura; von Maydell, Karsten; Agert, Carsten

    2015-02-01

    Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular. In silicon thin-film photovoltaics a multijunction stack with more than two subcells requires a high bandgap amorphous silicon alloy top cell absorber to achieve an optimal bandgap combination. We address the question whether amorphous silicon carbide (a-SiC:H) or amorphous silicon oxide (a-SiO:H) is more suited for this type of top cell absorber. Our single cell results show a better performance of amorphous silicon carbide with respect to fill factor and especially open circuit voltage at equivalent Tauc bandgaps. The microstructure factor of single layers indicates less void structure in amorphous silicon carbide than in amorphous silicon oxide. Yet photoconductivity of silicon oxide films seems to be higher which could be explained by the material being not truly intrinsic. On the other hand better cell performance of amorphous silicon carbide absorber layers might be connected to better hole transport in the cell.

  20. Bismuth Subsalicylate

    MedlinePlus

    Pink Bismuth® ... Bismuth subsalicylate is used to treat diarrhea, heartburn, and upset stomach in adults and children 12 years of age and older. Bismuth subsalicylate is in a class of medications called ...

  1. Synthesis and structural characterization of new bismuth (III) nano coordination polymer: A precursor to produce pure phase nano-sized bismuth (III) oxide

    NASA Astrophysics Data System (ADS)

    Hanifehpour, Younes; Mirtamizdoust, Babak; Hatami, Masoud; Khomami, Bamin; Joo, Sang Woo

    2015-07-01

    A novel bismuth (III) nano coordination polymer, {[Bi (pcih)(NO3)2]ṡMeOH}n (1), ("pcih" is the abbreviations of 2-pyridinecarbaldehyde isonicotinoylhydrazoneate) were synthesized by a sonochemical method. The new nano-structure was characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray powder diffraction, elemental analyses and IR spectroscopy. Single crystalline material was obtained using a heat gradient applied to a solution of the reagents. Compound 1 was structurally characterized by single crystal X-ray diffraction. The determination of the structure by single crystal X-ray crystallography shows that the complex forms a zig-zag one dimensional polymer in the solid state and the coordination number of BiIII ions is seven, (BiN3O4), with three N-donor and one O-donor atoms from two "pcih" and three O-donors from nitrate anions. It has a hemidirected coordination sphere. The supramolecular features in these complexes are guided and controlled by weak directional intermolecular interactions. The chains interact with each other through π-π stacking interactions creating a 3D framework. After thermolysis of 1 at 230 °C with oleic acid, pure phase nano-sized bismuth (III) oxide was produced. The morphology and size of the prepared Bi2O3 samples were further observed using SEM.

  2. Silicon Carbide Nanotube Oxidation at High Temperatures

    NASA Technical Reports Server (NTRS)

    Ahlborg, Nadia; Zhu, Dongming

    2012-01-01

    Silicon Carbide Nanotubes (SiCNTs) have high mechanical strength and also have many potential functional applications. In this study, SiCNTs were investigated for use in strengthening high temperature silicate and oxide materials for high performance ceramic nanocomposites and environmental barrier coating bond coats. The high · temperature oxidation behavior of the nanotubes was of particular interest. The SiCNTs were synthesized by a direct reactive conversion process of multiwall carbon nanotubes and silicon at high temperature. Thermogravimetric analysis (TGA) was used to study the oxidation kinetics of SiCNTs at temperatures ranging from 800degC to1300degC. The specific oxidation mechanisms were also investigated.

  3. Functionalised silicon oxide nanoparticles for fingermark detection.

    PubMed

    Moret, Sébastien; Bécue, Andy; Champod, Christophe

    2016-02-01

    Over the past decade, the use of nanotechnology for fingermark detection has been attracting a lot of attention. A substantial number of nanoparticle types has thus been studied and applied with varying success. However, despite all efforts, few publications present clear supporting evidence of their superiority over standard and commonly used techniques. This paper focuses on a rarely studied type of nanoparticles that regroups all desired properties for effective fingermark detection: silicon oxide. These nanoparticles offer optical and surface properties that can be tuned to provide optimal detection. This study explores their potential as a new method for fingermark detection. Detection conditions, outer functionalisations and optical properties were optimised and a first evaluation of the technique is presented. Dye-doped silicon oxide nanoparticles were assessed against a one-step luminescent cyanoacrylate. Both techniques were compared on natural fingermarks from three donors collected on four different non-porous substrates. On average, the two techniques performed similarly but silicon oxide detected marks with a better homogeneity and was less affected by donor inter-variability. The technique remains to be further optimised and yet silicon oxide nanoparticles already show great promises for effective fingermark detection. PMID:26717406

  4. Photoluminescence mechanism model for oxidized porous silicon and nanoscale-silicon-particle-embedded silicon oxide

    NASA Astrophysics Data System (ADS)

    Qin, G. G.; Li, Y. J.

    2003-08-01

    There is much debate about the photoluminescence (PL) mechanisms of the nanoscale Si/Si oxide systems containing oxidized porous silicon and a nanoscale-Si-particle (NSP)—embedded Si oxide deposited by chemical vapor deposition, sputtering, or Si-ion implanting into Si oxide. In this paper, we suggest that two competitive processes, namely, the quantum confinement (QC) process and the quantum confinement-luminescence center (QCLC) process, take place in the PL. The photoexcitation occurs in the NSPs for both of the processes, while the photoemission occurs either in the NSPs for the QC process or in the luminescence centers (LCs) in Si oxide adjacent to the NSPs for the QCLC process. The rates of the two processes are compared quantitatively. Which process plays the major role in PL is determined by the capture cross section, the luminescence efficiency, and the density of the LCs, and the sizes of the NSPs. For a nanoscale Si/Si oxide system with the LCs having certain capture cross-section and luminescence efficiency, the higher the LC density and the larger the sizes of NSPs, the more beneficial for the QCLC process to surpass the QC process, and vice versa. For certain LC parameters, there is a critical most probable size for the NSPs. When the most probable size of the NSPs is larger than the critical one, the QCLC process dominates the PL, and when the most probable size of the NSPs is smaller than the critical one, the QC process dominates the PL. When the most probable size of the NSPs is close to the critical one, both the QC and QCLC processes should be taken into account. We have used this model to discuss PL experimental results reported for some nanoscale Si/Si oxide systems.

  5. Tailoring Silicon Oxycarbide Glasses for Oxidative Stability

    NASA Technical Reports Server (NTRS)

    Hurwitz, F. I.; Meador, M. A. B.

    1997-01-01

    Blackglas(Trademark) polysiloxane systems produce silicon oxycarbide glasses by pyrolysis in inert atmosphere. The silicon oxycarbides evidence oxidative degradation that limits their lifetime as composite matrices. The present study characterizes bonding rearrangements in the oxycarbide network accompanying increases in pyrolysis temperature. It also addresses the changes in susceptibility to oxidation due to variations in the distribution of Si bonded species obtained under different processing conditions. The study is carried out using Si-29 nuclear magnetic resonance (NMR) spectroscopy and a design of experiments approach to model the oxidation behavior. The NMR results are compared with those obtained by thermogravimetric analysis (TGA). Samples pyrolyzed under inert conditions are compared to those pyrolyzed in reactive ammonia environments.

  6. Development of tellurium oxide and lead-bismuth oxide glasses for mid-wave infra-red transmission optics

    NASA Astrophysics Data System (ADS)

    Zhou, Beiming; Rapp, Charles F.; Driver, John K.; Myers, Michael J.; Myers, John D.; Goldstein, Jonathan; Utano, Rich; Gupta, Shantanu

    2013-03-01

    Heavy metal oxide glasses exhibiting high transmission in the Mid-Wave Infra-Red (MWIR) spectrum are often difficult to manufacture in large sizes with optimized physical and optical properties. In this work, we researched and developed improved tellurium-zinc-barium and lead-bismuth-gallium heavy metal oxide glasses for use in the manufacture of fiber optics, optical components and laser gain materials. Two glass families were investigated, one based upon tellurium and another based on lead-bismuth. Glass compositions were optimized for stability and high transmission in the MWIR. Targeted glass specifications included low hydroxyl concentration, extended MWIR transmission window, and high resistance against devitrification upon heating. Work included the processing of high purity raw materials, melting under controlled dry Redox balanced atmosphere, finning, casting and annealing. Batch melts as large as 4 kilograms were sprue cast into aluminum and stainless steel molds or temperature controlled bronze tube with mechanical bait. Small (100g) test melts were typically processed in-situ in a 5%Au°/95%Pt° crucible. Our group manufactured and evaluated over 100 different experimental heavy metal glass compositions during a two year period. A wide range of glass melting, fining, casting techniques and experimental protocols were employed. MWIR glass applications include remote sensing, directional infrared counter measures, detection of explosives and chemical warfare agents, laser detection tracking and ranging, range gated imaging and spectroscopy. Enhanced long range mid-infrared sensor performance is optimized when operating in the atmospheric windows from ~ 2.0 to 2.4μm, ~ 3.5 to 4.3μm and ~ 4.5 to 5.0μm.

  7. Silicon carbide-silicon composite having improved oxidation resistance and method of making

    NASA Technical Reports Server (NTRS)

    Luthra, Krishan Lal (Inventor); Wang, Hongyu (Inventor)

    1999-01-01

    A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

  8. Method of making silicon carbide-silicon composite having improved oxidation resistance

    NASA Technical Reports Server (NTRS)

    Luthra, Krishan Lal (Inventor); Wang, Hongyu (Inventor)

    2002-01-01

    A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

  9. Silica substrate or portion formed from oxidation of monocrystalline silicon

    DOEpatents

    Matzke, Carolyn M.; Rieger, Dennis J.; Ellis, Robert V.

    2003-07-15

    A method is disclosed for forming an inclusion-free silica substrate using a monocrystalline silicon substrate as the starting material and oxidizing the silicon substrate to convert it entirely to silica. The oxidation process is performed from both major surfaces of the silicon substrate using a conventional high-pressure oxidation system. The resulting product is an amorphous silica substrate which is expected to have superior etching characteristics for microfabrication than conventional fused silica substrates. The present invention can also be used to convert only a portion of a monocrystalline silicon substrate to silica by masking the silicon substrate and locally thinning a portion the silicon substrate prior to converting the silicon portion entirely to silica. In this case, the silica formed by oxidizing the thinned portion of the silicon substrate can be used, for example, as a window to provide optical access through the silicon substrate.

  10. Evaluation of radiation dose reduction during CT scans by using bismuth oxide and nano-barium sulfate shields

    NASA Astrophysics Data System (ADS)

    Seoung, Youl-Hun

    2015-07-01

    The purpose of the present study was to evaluate the radiation dose reduction and the image quality during CT scanning by using a new dose reduction fiber sheet (DRFS) with commercially available bismuth shields. These DRFS, were composed of nano-barium sulfate (BaSO4) filling the gaps left by the large bismuth oxide (Bi2O3) particles. The radiation dose was measured five times at a direction of 12 o'clock from the center of the polymethyl methacrylate (PMMA) head phantom by using a CT ionization chamber to calculate an average value. The image quality of measured CT transverse images of the PMMA head phantom depended on the X-ray tube voltage and the type of shielding. Two regions of interest in the CT transverse images were chosen, one from the right area and the other from the left area under the surface of the PMMA head phantom and at a distance of ion chamber holes located in a direction of 12 o'clock from the center of the PMMA head phantom. The results of this study showed that the new DRFS shields could reduce the dosages by 15.61%, 23.05%, and 22.71% at 90 kVp, 120 kVp, and 140 kVp, respectively, than with these of a conventional bismuth shield of the same thickness while maintaining image quality. In addition, the DRFSs produced were about 25% thinness than conventional bismuth. We conclude, therefore, that a DRFS can replace conventional bismuth as a new shield.

  11. Enhancing the Performance of the Rechargeable Iron Electrode in Alkaline Batteries with Bismuth Oxide and Iron Sulfide Additives

    SciTech Connect

    Manohar, AK; Yang, CG; Malkhandi, S; Prakash, GKS; Narayanan, SR

    2013-09-07

    Iron-based alkaline rechargeable batteries have the potential of meeting the needs of large-scale electrical energy storage because of their low-cost, robustness and eco-friendliness. However, the widespread commercial deployment of iron-based batteries has been limited by the low charging efficiency and the poor discharge rate capability of the iron electrode. In this study, we have demonstrated iron electrodes containing bismuth oxide and iron sulfide with a charging efficiency of 92% and capable of being discharged at the 3C rate. Such a high value of charging efficiency combined with the ability to discharge at high rates is being reported for the first time. The bismuth oxide additive led to the in situ formation of elemental bismuth and a consequent increase in the overpotential for the hydrogen evolution reaction leading to an increase in the charging efficiency. We observed that the sulfide ions added to the electrolyte and iron sulfide added to the electrode mitigated-electrode passivation and allowed for continuous discharge at high rates. At the 3C discharge rate, a utilization of 0.2 Ah/g was achieved. The performance level of the rechargeable iron electrode demonstrated here is attractive for designing economically-viable large-scale energy storage systems based on alkaline nickel-iron and iron-air batteries. (C) 2013 The Electrochemical Society. All rights reserved.

  12. Boron-Doped Strontium-Stabilized Bismuth Cobalt Oxide Thermoelectric Nanocrystalline Ceramic Powders Synthesized via Electrospinning

    NASA Astrophysics Data System (ADS)

    Koçyiğit, Serhat; Aytimur, Arda; Çınar, Emre; Uslu, İbrahim; Akdemir, Ahmet

    2014-01-01

    Boron-doped strontium-stabilized bismuth cobalt oxide thermoelectric nanocrystalline ceramic powders were produced by using a polymeric precursor technique. The powders were characterized by using x-ray diffraction (XRD), scanning electron microscopy (SEM), and physical properties measurement system (PPMS) techniques. The XRD results showed that these patterns have a two-phase mixture. The phases are face-centered cubic (fcc) and body-centered cubic (bcc). Values of the crystallite size, dislocation density, and microstrain were calculated by using the Scherrer equation. The lattice parameters were calculated for fcc and bcc phases. The SEM results showed that needle-like grains are formed in boron-undoped composite materials, but the needle-like grains changed to the plate-like grains with the addition of boron. The distribution of the nanofiber diameters was calculated and the average diameter of the boron-doped sample is smaller than the boron-undoped one. PPMS values showed that the electrical resistivity values decreased, but the thermal conductivity values, the Seebeck coefficients, and figure of merit ( ZT) increased with increasing temperature for the two samples.

  13. Easy synthesis of bismuth iron oxide nanoparticles as photocatalyst for solar hydrogen generation from water

    NASA Astrophysics Data System (ADS)

    Deng, Jinyi

    In this study, high purity bismuth iron oxide (BiFeO3/BFO) nanoparticles of size 50-80 nm have been successfully synthesized by a simple sol-gel method using urea and polyvinyl alcohol at low temperature. X-ray diffraction (XRD) measurement is used to optimize the synthetic process to get highly crystalline and pure phase material. Diffuse reflectance ultraviolet-visible (DRUV-Vis) spectrum indicates that the absorption cut-off wavelength of the nanoparticles is about 620 nm, corresponding to an energy band gap of 2.1 eV. Compared to BaTiO3, BFO has a better degradation of methyl orange under light radiation. Also, photocatalytic tests prove this material to be efficient towards water splitting under simulated solar light to generate hydrogen. The simple synthetic methodology adopted in this paper will be useful in developing low-cost semiconductor materials as effective photocatalysts for hydrogen generation. Photocatalytic tests followed by gas chromatography (GC) analyses show that BiFeO3 generates three times more hydrogen than commercial titania P25 catalyst under the same experimental conditions.

  14. Structural, electrical and magnetic measurements on oxide layers grown on 316L exposed to liquid lead-bismuth eutectic

    NASA Astrophysics Data System (ADS)

    Hosemann, Peter; Hofer, Christian; Hlawacek, Gregor; Li, Ning; Maloy, Stuart A.; Teichert, Christian

    2012-02-01

    Fast reactors and spallation neutron sources may use lead-bismuth eutectic (LBE) as a coolant. Its physical, chemical, and irradiation properties make it a safe coolant compared to Na cooled designs. However, LBE is a corrosive medium for most steels and container materials. The present study was performed to evaluate the corrosion behavior of the austenitic steel 316L (in two different delivery states). Detailed atomic force microscopy, magnetic force microscopy, conductive atomic force microscopy, and scanning transmission electron microscopy analyses have been performed on the oxide layers to get a better understanding of the corrosion and oxidation mechanisms of austenitic and ferritic/martensitic stainless steel exposed to LBE. The oxide scale formed on the annealed 316L material consisted of multiple layers with different compositions, structures, and properties. The innermost oxide layer maintained the grain structure of what used to be the bulk steel material and shows two phases, while the outermost oxide layer possessed a columnar grain structure.

  15. Fouling Study of Silicon Oxide Pores Exposed to Tap Water

    SciTech Connect

    Nilsson, J.; Bourcier, W.L.; Lee, J.R.I.; Letant, S.E.; /LLNL, Livermore

    2007-07-12

    We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.

  16. Dissolution and oxidation behaviour of various austenitic steels and Ni rich alloys in lead-bismuth eutectic at 520 °C

    NASA Astrophysics Data System (ADS)

    Roy, Marion; Martinelli, Laure; Ginestar, Kevin; Favergeon, Jérôme; Moulin, Gérard

    2016-01-01

    Ten austenitic steels and Ni rich alloys were tested in static lead-bismuth eutectic (LBE) at 520 °C in order to obtain a selection of austenitic steels having promising corrosion behaviour in LBE. A test of 1850 h was carried out with a dissolved oxygen concentration between 10-9 and 5 10-4 g kg-1. The combination of thermodynamic of the studied system and literature results leads to the determination of an expression of the dissolved oxygen content in LBE as a function of temperature: RT(K)ln[O](wt%) = -57584/T(K) -55.876T(K) + 254546 (R is the gas constant in J mol-1 K-1). This relation can be considered as a threshold of oxygen content above which only oxidation is observed on the AISI 316L and AISI 304L austenitic alloys in static LBE between 400 °C and 600 °C. The oxygen content during the test leads to both dissolution and oxidation of the samples during the first 190 h and leads to pure oxidation for the rest of the test. Results of mixed oxidation and dissolution test showed that only four types of corrosion behaviour were observed: usual austenitic steels and Ni rich alloys behaviour including the reference alloy 17Cr-12Ni-2.5Mo (AISI 316LN), the 20Cr-31Ni alloy one, the Si containing alloy one and the Al containing alloy one. According to the proposed criteria of oxidation and dissolution kinetics, silicon rich alloys and aluminum rich alloy presented a promising corrosion behaviour.

  17. The Active Oxidation of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Myers, Dwight L.

    2009-01-01

    The high temperature oxidation of silicon carbide occurs in two very different modes. Passive oxidation forms a protective oxide film which limits further attack of the SiC: SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g) Active oxidation forms a volatile oxide and may lead to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g) Generally passive oxidation occurs at higher oxidant pressures and active oxidation occurs at lower oxidant pressures and elevated temperatures. Active oxidation is a concern for reentry, where the flight trajectory involves the latter conditions. Thus the transition points and rates of active oxidation are a major concern. Passive/active transitions have been studied by a number of investigators. An examination of the literature indicates many questions remain regarding the effect of impurity, the hysteresis of the transition (i.e. the difference between active-to-passive and passive-toactive), and the effect of total pressure. In this study we systematically investigate each of these effects. Experiments were done in both an alumina furnace tube and a quartz furnace tube. It is known that alumina tubes release impurities such as sodium and increase the kinetics in the passive region [1]. We have observed that the active-to-passive transition occurs at a lower oxygen pressure when the experiment is conducted in alumina tubes and the resultant passive silica scale contains sodium. Thus the tests in this study are conducted in quartz tubes. The hysteresis of the transition has been discussed in the detail in the original theoretical treatise of this problem for pure silicon by Wagner [2], yet there is little mention of it in subsequent literature. Essentially Wagner points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. A series of experiments were conducted for active-to-passive and passive

  18. Ultrafast laser functionalized rare phased gold-silicon/silicon oxide nanostructured hybrid biomaterials.

    PubMed

    Premnath, P; Tan, B; Venkatakrishnan, K

    2015-12-01

    We introduce a hybrid nanostructured biomaterial that is a combination of rare phases of immiscible gold and silicon oxide, functionalized via ultrafast laser synthesis. For the first time, we show cancer controlling properties of rare phases of gold silicides, which include Au7Si, Au5Si, Au0.7Si2.3 and Au8Si2. Conventionally, pure forms of gold and silicon/silicon oxide are extensively employed in targeted therapy and drug delivery systems due to their unique properties. While silicon and silicon oxide nanoparticles have shown biocompatibility, gold nanoparticles show conflicting results based on their size and material properties. Several studies have shown that gold and silicon combinations produce cell controlling properties, however, these studies were not able to produce a homogenous combination of gold and silicon, owing to its immiscibility. A homogenous combination of gold and silicon may potentially enable properties that have not previously been reported. We describe rare phased gold-silicon oxide nanostructured hybrid biomaterials and its unique cancer controlling properties, owing to material properties, concentration, size and density. The gold-silicon oxide nanostructured hybrid is composed of individual gold-silicon oxide nanoparticles in various concentrations of gold and silicon, some nanoparticles possess a gold-core and silicon-shell like structure. The individual nanoparticles are bonded together forming a three dimensional nanostructured hybrid. The interaction of the nanostructured hybrids with cervical cancer cells showed a 96% reduction in 24h. This engineered nanostructured hybrid biomaterial presents significant potential due to the combination of immiscible gold and silicon oxide in varying phases and can potentially satiate the current vacuum in cancer therapy. PMID:26539809

  19. Guided photoluminescence study of Nd-doped silicon rich silicon oxide and silicon rich silicon nitride waveguides

    NASA Astrophysics Data System (ADS)

    Pirasteh, Parastesh; Charrier, Joël; Dumeige, Yannick; Doualan, Jean-Louis; Camy, Patrice; Debieu, Olivier; Liang, Chuan-hui; Khomenkova, Larysa; Lemaitre, Jonathan; Boucher, Yann G.; Gourbilleau, Fabrice

    2013-07-01

    Planar waveguides made of Nd3+-doped silicon rich silicon oxide (SRSO) and silicon rich silicon nitride (SRSN) have been fabricated by reactive magnetron sputtering and characterized with special emphasis on the comparison of the guided photoluminescence (PL) properties of these two matrices. Guided fluorescence excited by top surface pumping at 488 nm on planar waveguides was measured as a function of the distance between the excitation area and the output of the waveguide, as well as a function of the pump power density. The PL intensity increased linearly with pump power without any saturation even at high power. The linear intensity increase of the Nd3+ guided PL under a non-resonant excitation (488 nm) confirms the efficient coupling between either Si-np and rare-earth ions for SRSO or radiative defects and rare earth ions for SRSN. The guided fluorescences at 945 and 1100 nm were observed until 4 mm and 8 mm of the output of the waveguide for Nd3+ doped SRSO and SRSN waveguides, respectively. The guided fluorescence decays of Nd3+-doped-SRSO and -SRSN planar waveguides have been measured and found equal to 97 μs ±7 and 5 μs ± 2, respectively. These results show notably that the Nd3+-doped silicon rich silicon oxide is a very promising candidate on the way to achieve a laser cavity at 1.06 μm.

  20. Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films

    SciTech Connect

    Agarwal, Khushboo; Mehta, B. R.

    2014-08-28

    In this study, the effect of the presence of secondary phases on the structural, electrical, and thermoelectric properties of nanocomposite Bi{sub 2}Te{sub 3} films prepared by co-sputtering of silicon and carbon with Bi{sub 2}Te{sub 3} has been investigated. Growth temperature and the presence of Si and C phase are observed to have a strong effect on the topography and orientation of crystallites. X-ray diffraction study demonstrates that Bi{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}:C samples have preferred (0 0 15) orientation in comparison to Bi{sub 2}Te{sub 3}:Si sample, which have randomly oriented crystallites. Atomic force, conducting atomic force, and scanning thermal microscopy analysis show significant differences in topographical, electrical, and thermal conductivity contrasts in Bi{sub 2}Te{sub 3}:Si and Bi{sub 2}Te{sub 3}:C samples. Due to the randomly oriented crystallites and the presence of Si along the crystallite boundaries, appreciable Seebeck coefficient, higher electrical conductivity, and lower thermal conductivity is achieved resulting in relatively higher value of power factor (3.71 mW K{sup −2} m{sup −1}) for Bi{sub 2}Te{sub 3}:Si sample. This study shows that by incorporating a secondary phase along crystallite boundaries, microstructural, electrical, and thermoelectric properties of the composite samples can be modified.

  1. Sensitized broadband near-infrared luminescence from bismuth-doped silicon-rich silica films.

    PubMed

    Miwa, Yuji; Sun, Hong-Tao; Imakita, Kenji; Fujii, Minoru; Teng, Yu; Qiu, Jianrong; Sakka, Yoshio; Hayashi, Shinji

    2011-11-01

    Developing Si compatible optical sources has attracted a great deal of attention owing to the potential for forming inexpensive, monolithic Si-based integrated devices. In this Letter, we show that ultra broadband near-IR (NIR) luminescence in the optical telecommunication window of silica optical fibers was obtained for Bi-doped silicon-rich silica films prepared by a co-sputtering method. Without excess Si, i.e., Bi-doped pure silica films, no luminescence was observed in the NIR range. A broad Bi-related NIR photoluminescence appears when excess Si was doped in the Bi-doped silica. The luminescence properties depended strongly on the amount of excess Si and the annealing temperature. Photoluminescence results suggest that excess Si acts as an agent to activate Bi NIR luminescence centers and also as an energy donor to transfer excitation energy to the centers. It is believed that this peculiar structure might find some important applications in Si photonics. PMID:22048371

  2. The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films

    NASA Astrophysics Data System (ADS)

    Southern-Holland, R.; Halsall, M. P.; Crowe, I. F.; Yang, P.; Gwilliam, R. M.

    2015-12-01

    We present a study of bismuth and aluminium co-implanted silica thin films and the effectiveness of post implantation annealing at activating Bismuth related photoluminescence. The only emission seen in photoluminescence from any of the samples was centred at 1160 nm and is of the kind generally reported as due to silicon dislocation loops. In particular, the layers did not exhibit the broad NIR emission in photoluminescence as reported by other authors in Bismuth doped silica fibres. In order to study the retention of the Bismuth in the layers after annealing Rutherford Backscattering measurements were conducted on the samples, these found that the concentration of bismuth in the samples was greatly reduced following the annealing process when compared to the concentration implanted and explains why we measured no emission from bismuth. The concentration of bismuth remaining in the sample post anneal depended on the initial implant doses of bismuth and aluminium. We propose that aluminium plays the role of increasing the solubility of bismuth in oxide but that this was not sufficient in our samples to observe the photoemission reported for fibre materials.

  3. Infrared Dielectric Properties of Low-Stress Silicon Oxide

    NASA Technical Reports Server (NTRS)

    Cataldo, Giuseppe; Wollack, Edward J.; Brown, Ari D.; Miller, Kevin H.

    2016-01-01

    Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.

  4. Silicon radiation detectors with oxide charge state compensation

    NASA Technical Reports Server (NTRS)

    Walton, J. T.; Goulding, F. S.

    1987-01-01

    This paper discusses the use of boron implantation on high resistivity P type silicon before oxide growth to compensate for the presence of charge states in the oxide and oxide/silicon interface. The presence of these charge states on high resistivity P type silicon produces an inversion layer which causes high leakage currents on N(+)P junctions and high surface conductance. Compensating the surface region by boron implantation is shown to result in oxide passivated N(+)P junctions with very low leakage currents and with low surface conductance.

  5. Laser-induced oxidation kinetics of bismuth surface microdroplets on GaAsBi studied in situ by Raman microprobe analysis.

    PubMed

    Steele, J A; Lewis, R A

    2014-12-29

    We report the cw-laser-induced oxidation of molecular-beam-epitaxy grown GaAsBi bismuth surface microdroplets investigated in situ by micro-Raman spectroscopy under ambient conditions as a function of irradiation power and time. Our results reveal the surface droplets are high-purity crystalline bismuth and the resultant Bi2O3 transformation to be β-phase and stable at room temperature. A detailed Raman study of Bi microdroplet oxidation kinetics yields insights into the laser-induced oxidation process and offers useful real-time diagnostics. The temporal evolution of new β-Bi2O3 Raman modes is shown to be well described by Johnson-Mehl-Avrami-Kolmogorov kinetic transformation theory and while this study limits itself to the laser-induced oxidation of GaAsBi bismuth surface droplets, the results will find application within the wider context of bismuth laser-induced oxidation and direct Raman laser processing. PMID:25607191

  6. Resistive switches and memories from silicon oxide.

    PubMed

    Yao, Jun; Sun, Zhengzong; Zhong, Lin; Natelson, Douglas; Tour, James M

    2010-10-13

    Because of its excellent dielectric properties, silicon oxide (SiO(x)) has long been used and considered as a passive, insulating component in the construction of electronic devices. In contrast, here we demonstrate resistive switches and memories that use SiO(x) as the sole active material and can be implemented in entirely metal-free embodiments. Through cross-sectional transmission electron microscopy, we determine that the switching takes place through the voltage-driven formation and modification of silicon (Si) nanocrystals (NCs) embedded in the SiO(x) matrix, with SiO(x) itself also serving as the source of the formation of this Si pathway. The small sizes of the Si NCs (d ∼ 5 nm) suggest that scaling to ultrasmall domains could be feasible. Meanwhile, the switch also shows robust nonvolatile properties, high ON/OFF ratios (>10(5)), fast switching (sub-100-ns), and good endurance (10(4) write-erase cycles). These properties in a SiO(x)-based material composition showcase its potentials in constructing memory or logic devices that are fully CMOS compatible. PMID:20806916

  7. Nitric oxide-releasing porous silicon nanoparticles

    NASA Astrophysics Data System (ADS)

    Kafshgari, Morteza Hasanzadeh; Cavallaro, Alex; Delalat, Bahman; Harding, Frances J.; McInnes, Steven JP; Mäkilä, Ermei; Salonen, Jarno; Vasilev, Krasimir; Voelcker, Nicolas H.

    2014-07-01

    In this study, the ability of porous silicon nanoparticles (PSi NPs) to entrap and deliver nitric oxide (NO) as an effective antibacterial agent is tested against different Gram-positive and Gram-negative bacteria. NO was entrapped inside PSi NPs functionalized by means of the thermal hydrocarbonization (THC) process. Subsequent reduction of nitrite in the presence of d-glucose led to the production of large NO payloads without reducing the biocompatibility of the PSi NPs with mammalian cells. The resulting PSi NPs demonstrated sustained release of NO and showed remarkable antibacterial efficiency and anti-biofilm-forming properties. These results will set the stage to develop antimicrobial nanoparticle formulations for applications in chronic wound treatment.

  8. Nitric oxide-releasing porous silicon nanoparticles

    PubMed Central

    2014-01-01

    In this study, the ability of porous silicon nanoparticles (PSi NPs) to entrap and deliver nitric oxide (NO) as an effective antibacterial agent is tested against different Gram-positive and Gram-negative bacteria. NO was entrapped inside PSi NPs functionalized by means of the thermal hydrocarbonization (THC) process. Subsequent reduction of nitrite in the presence of d-glucose led to the production of large NO payloads without reducing the biocompatibility of the PSi NPs with mammalian cells. The resulting PSi NPs demonstrated sustained release of NO and showed remarkable antibacterial efficiency and anti-biofilm-forming properties. These results will set the stage to develop antimicrobial nanoparticle formulations for applications in chronic wound treatment. PMID:25114633

  9. Chemical oxygen demand analysis of wastewater using trivalent manganese oxidant with chloride removal by sodium bismuthate pretreatment.

    PubMed

    Miller, D G; Brayton, S V; Boyles, W T

    2001-01-01

    Current chemical oxygen demand (COD) analyses generate wastes containing hexavalent and trivalent chromium, mercury, and silver. Waste disposal is difficult, expensive, and poses environmental hazards. A new COD test is proposed that eliminates these metals and shortens analysis time, where trivalent manganese oxidant replaces hexavalent chromium (dichromate). A silver catalyst is not required. Optional pretreatment removes chloride via oxidation to chlorine using sodium bismuthate, eliminating the need for mercury. Sample aqueous and solid components are separated for chloride removal, then recombined for total COD measurement. Soluble and nonsoluble COD can be determined separately. Digestion at 150 degrees C is complete in 1 hour. Results are determined by titration or by spectrophotometric reading. Test wastes contain none of the metals regulated for disposal under the Resource Conservation and Recovery Act. Results are shown for selected organic compounds and various wastewaters. Statistical comparisons are made with dichromate COD and biochemical oxygen demand (BOD5) test values. PMID:11558305

  10. The photorefractive characteristics of bismuth-oxide doped lithium niobate crystals

    SciTech Connect

    Zheng, Dahuai; Yao, Jiaying; Kong, Yongfa; Liu, Shiguo; Zhang, Ling; Chen, Shaolin; Xu, Jingjun

    2015-01-15

    Bismuth-doped lithium niobate (LN:Bi) crystals were grown by Czochralski method and their optical damage resistance, photorefraction, absorption spectra, and defect energy levels were investigated. The experimental results indicate that the photorefractive properties of LN:Bi were enhanced as compared with congruent one, the photorefractive response time was greatly shortened, the photorefractive sensitivity was increased, and the diffraction efficiency of near-stoichiometric LN:Bi (SLN:Bi) reached 31.72% and 49.08% at 532 nm and 488 nm laser, respectively (light intensity of 400 mW/cm{sup 2}). An absorption peak at about 350 nm was observed in the absorption spectrum of LN:Bi. And the defect energy levels simulation indicates new defect levels appear in the forbidden gap of LN:Bi crystals. Therefore bismuth can act as photorefractive centers in LN crystals.

  11. Ferroelectric and pyroelectric properties of solution derived bismuth titanium oxide thin films

    NASA Astrophysics Data System (ADS)

    Tran, Khang Duy

    Ferroelectric, pyroelectric, and photovoltaic effects in the bismuth titanate (Bi4Ti3O12, BIT) and the lanthanum bismuth titanate (LaxBi4-xTi3O 12, LBIT) solid solution thin films were studied. Films were successfully prepared using the metalorganic spin-casting technique. The development of texture orientation in different directions in the bismuth titanate films was examined in relation to solution characteristics such as solution viscosity, Bi-content, and the heat-treatment conditions, including the sintering temperature/time. X-ray diffraction, Raman spectroscopy and electron microscopy techniques were used to structurally characterize orientation formation in the films. Experimental results indicate that Bi-excess and sintering temperature/time are the critical factors governing controlled growth of films with preferred orientation. The bismuth excess is to compensate for the Bi loss during the fabrication process. Films with high degree of c-orientation, as high as 0.95--0.97, were obtained with the heterostructure layer deposition technique. Measurements of pyroelectric and photoelectric properties of BIT films with preferred orientation in both a- and c-directions showed significantly high responses. Indications are that these oriented films can be materials suitable for the integrated pyroelectric detector applications. The high pyroelectric response in the films was attributed to the comparatively high value of pyroelectric coefficient, relatively low dielectric constant, and low thermal time constant. The use of lanthanum in substitution of Bi ions in the BIT lattice to form the LBIT solid solution, led to the alteration of the lattice strain, as revealed by the corresponding Raman shift spectra. Result was a lower switching field and higher spontaneous polarization in comparison with BIT and many other ferroelectric film materials. This effect was attributed to, in part, a high domain wall mobility. These results suggest that LBIT films are materials

  12. Synthesis and characterization of barium iron oxide and bismuth iron oxide epitaxial films

    NASA Astrophysics Data System (ADS)

    Callender Bennett, Charlee J.

    Much interest exists in perovskite oxide materials and the potential they have in possessing two or more functional properties. In recent years, research on developing new materials with simultaneous ferromagnetic and ferroelectric behavior is the key to addressing possible challenges of new storage information applications. This work examines the fundamental properties of a perovskite oxide, namely BaFeO3, and the investigation of properties of a solid solution between BaFeO3 and BiFeO3. The growth and properties of epitaxial BaFeO3 thin films in the metastable cubic perovskite phase are examined. BaFeO3 films were grown on (012) LaAlO3 and (001) SrTiO3 single crystal substrates by pulsed-laser deposition. X-ray diffraction shows that in situ growth at temperatures between 650-850°C yields an oxygen-deficient BaFeO 2.5+x pseudo-cubic perovskite phase that is insulating and paramagnetic. Magnetization measurements on the asdeposited BaFeO3 films indicate non-ferromagnetic behavior. Annealing these films in 1 atm oxygen ambient converts the films into a pseudo-cubic BaFeO3-x phase that is ferromagnetic with a Curie temperature of 235 K. The observation of ferromagnetism with increasing oxygen content is consistent with superexchange coupling of Fe +4-O-Fe+4. The effects of anneal conditions on BaFeO3 are studied. X-ray characterization, such as reciprocal space maps, show more complex structure for as-grown BaFeO3-x epitaxial films. Epitaxial films grown at low laser energies are highly crystalline. However, they decompose after annealing. When grown at high laser energies, films exhibit complex structure which "cleans up" to a single pseudocubic or tetragonal structure upon ex situ anneal in oxygen ambient environment. Superlattices of BaFeO 3/SrTiO3 were synthesized to explore the nature of "cracking" in annealed BaFeO3, which occurs due to large change in lattice parameter. Magnetization of ex situ annealed BaFeO3-x epitaxial films were examined as a function of

  13. Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix

    SciTech Connect

    Kole, Arindam; Chaudhuri, Partha

    2014-10-15

    A moderately low temperature (≤800 °C) thermal processing technique has been described for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc-SiC:H) dielectric thin films deposited by plasma enhanced chemical vapour deposition (PECVD) process. The nanocrystalline silicon grains (nc-Si) present in the as deposited films were initially enhanced by aluminium induced crystallization (AIC) method in vacuum at a temperature of T{sub v} = 525 °C. The samples were then stepwise annealed at different temperatures T{sub a} in air ambient. Analysis of the films by FTIR and XPS reveal a rearrangement of the μc-SiC:H network has taken place with a significant surface oxidation of the nc-Si domains upon annealing in air. The nc-Si grain size (D{sub XRD}) as calculated from the XRD peak widths using Scherrer formula was found to decrease from 7 nm to 4 nm with increase in T{sub a} from 250 °C to 800 °C. A core shell like structure with the nc-Si as the core and the surface oxide layer as the shell can clearly describe the situation. The results indicate that with the increase of the annealing temperature in air the oxide shell layer becomes thicker and the nc-Si cores become smaller until their size reduced to the order of the Si-QDs. Quantum confinement effect due to the SiO covered nc-Si grains of size about 4 nm resulted in a photoluminescence peak due to the Si QDs with peak energy at 1.8 eV.

  14. I. Electroluminescence from Hydrogen Uranyl Phosphate. I. Indium-Substituted Bismuth Copper Oxide Superconductors

    NASA Astrophysics Data System (ADS)

    Dieckmann, Gunnar Rudolph

    1990-01-01

    Chapter 1. A review of the general aspects of solid electrolytes is presented along with a summary of the electrical and optical properties of hydrogen uranyl phosphate (HUO_2PO_4 bullet4H_2O, HUP). A review of impedance spectroscopy, as it relates to the determination of ionic conductivities and dielectric constants of solid electrolytes is presented. The final section covers some aspects of gas plasma display devices. Chapter 2. Electroluminescence (EL) cells have been constructed with the ionically conducting solid HUP as the emissive medium. With ac excitation, both uranyl emission and molecular nitrogen plasma emission are observed, with the latter appearing to excite the former. Similar results were obtained with fully-substituted sodium (NaUP), magnesium (Mg_{0.5}UP), and pyridinium (pyHUP) derivatives of HUP. For all of these solids, the dependence of the EL intensity on sample thickness, ac frequency, and applied voltage has been determined. Impedance measurements permitted acquisition of dielectric constants and ionic conductivities for these solids, both of which decrease in the order HUP > NaUP > Mg_{0.5}UP > pyHUP. A model describing the dependence of EL intensity on cell parameters is presented. Chapter 3. The copper oxide superconductors can be structurally classified into five major families, represented by the compositions, (La,Sr)_2CuO _4, YBa_2Cu_3O_7, Pb_2Sr_2(Y,Ca)Cu_3O_8, (TIO)_{m}Ca_{n-1}Ba_2Cu _{n}O_{2n+2}, and Bi_2Sr_2(Ln_{1-x}Ce _{x})_2Cu_2O_{10+y }. All families are linked by a CuO _2 layer, which is crucial for superconductivity. The structural and chemical aspects of each family is covered with emphasis on the bismuth and thallium systems. The effects of substitution and oxygen annealing are also briefly considered. Chapter 4. The attempted substitution of indium into the rm Bi_2(Ca,Sr)_2CuO _6 and Bi_2(Ca,Sr) _3Cu_2O _8 systems is reported. Previously unreported side products, (Ca,Sr)In_2O _4 and Bi-Ca-Sr-O, viz., produced in the

  15. Improved Retention Characteristic in Polycrystalline Silicon-Oxide-Hafnium Oxide-Oxide-Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride

    NASA Astrophysics Data System (ADS)

    Hsieh, Chih Ren; Lai, Chiung Hui; Lin, Bo Chun; Zheng, Yuan Kai; Chung Lou, Jen; Lin, Gray

    2011-03-01

    In this paper, we present a simple novel process for forming a robust and reliable oxynitride dielectric with a high nitrogen content. It is highly suitable for n-channel metal-oxide-semiconductor field-effect transistor (nMOSFETs) and polycrystalline silicon-oxide-hafnium oxide-oxide-silicon (SOHOS)-type memory applications. The proposed approach is realized by using chemical oxide with ammonia (NH3) nitridation followed by reoxidation with oxygen (O2). The novel oxynitride process is not only compatible with the standard complementary metal-oxide-semiconductor (CMOS) process, but also can ensure the improvement of flash memory with low-cost manufacturing. The characteristics of nMOSFETs and SOHOS-type nonvolatile memories (NVMs) with a robust oxynitride as a gate oxide or tunnel oxide are studied to demonstrate their advantages such as the retardation of the stress-induced trap generation during constant-voltage stress (CVS), the program/erase behaviors, cycling endurance, and data retention. The results indicate that the proposed robust oxynitride is suitable for future nonvolatile flash memory technology application.

  16. Indium oxide/n-silicon heterojunction solar cells

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  17. One-step synthesis of bismuth molybdate catalysts via flame spray pyrolysis for the selective oxidation of propylene to acrolein.

    PubMed

    Schuh, K; Kleist, W; Høj, M; Trouillet, V; Jensen, A D; Grunwaldt, J-D

    2014-12-18

    Flame spray pyrolysis (FSP) of Bi(III)- and Mo(VI)-2-ethylhexanoate dissolved in xylene resulted in various nanocrystalline bismuth molybdate phases depending on the Bi/Mo ratio. Besides α-Bi2Mo3O12 and γ-Bi2MoO6, FSP gave direct access to the metastable β-Bi2Mo2O9 phase with high surface area (19 m(2) g(-1)). This phase is normally only obtained at high calcination temperatures (>560 °C) resulting in lower surface areas. The β-phase was stable up to 400 °C and showed superior catalytic performance compared to α- and γ-phases in selective oxidation of propylene to acrolein at temperatures relevant for industrial applications (360 °C). PMID:25350295

  18. Research on silicon microchannel arrays oxide insulation technology

    NASA Astrophysics Data System (ADS)

    Wu, Ke-xin; Duanmu, Qingduo; Wang, Guozheng; Yang, Ji-kai; Kou, Yang-qiang

    2015-03-01

    Silicon microchannel plates (Si-MCP) is widely used in the photomultiplier, night vision, X- ray intensifier and other areas. In order to meet the requirements of high voltage electron multiplier, Si-MCP need to prepare a layer of silicon dioxide in the microchannel to improve the insulating properties. There are many methods for preparing SiO2 layer, such as thermal growth, magnetron sputtering method and chemical vapor deposition etc. The thermal oxidation method is often used for preparation of insulating layer that it grows film thickness uniformity, compact structure, simple process and so on. There will be bending deformation phenomenon of silicon microchannel arrays in high temperature oxidation process. The warpage of Si-MCP has brought great for difficulties of subsequent processing. Silicon crystals has the properties of plastic deformation at high temperature, this article take full advantage of this properties by which the already bending deformation of silicon microchannel arrays can be restored to flat.

  19. Enhancement of Er optical efficiency through bismuth sensitization in yttrium oxide

    SciTech Connect

    Scarangella, Adriana; Reitano, Riccardo; Franzò, Giorgia; Miritello, Maria; Priolo, Francesco

    2015-07-27

    The process of energy transfer (ET) between optically active ions has been widely studied to improve the optical efficiency of a system for different applications, from lighting and photovoltaics to silicon microphotonics. In this work, we report the influence of Bi on the Er optical emission in erbium-yttrium oxide thin films synthesized by magnetron co-sputtering. We demonstrate that this host permits to well dissolve Er and Bi ions, avoiding their clustering, and thus to stabilize the optically active Er{sup 3+} and Bi{sup 3+} valence states. In addition, we establish the ET occurrence from Bi{sup 3+} to Er{sup 3+} by the observed Bi{sup 3+} PL emission decrease and the simultaneous Er{sup 3+} photoluminescence (PL) emission increase. This was further confirmed by the coincidence of the Er{sup 3+} and Bi{sup 3+} excitation bands, analyzed by PL excitation spectroscopy. By increasing the Bi content of two orders of magnitude inside the host, though the occurrence of Bi-Bi interactions becomes deleterious for Bi{sup 3+} optical efficiency, the ET process between Bi{sup 3+} and Er{sup 3+} is still prevalent. We estimate ET efficiency of 70% for the optimized Bi:Er ratio equal to 1:3. Moreover, we have demonstrated to enhance the Er{sup 3+} effective excitation cross section by more than three orders of magnitude with respect to the direct one, estimating a value of 5.3 × 10{sup −18} cm{sup 2}, similar to the expected Bi{sup 3+} excitation cross section. This value is one of the highest obtained for Er in Si compatible hosts. These results make this material very promising as an efficient emitter for Si-compatible photonics devices.

  20. The induction of heme oxygenase-1 modulates bismuth oxide-induced cytotoxicity in human dental pulp cells.

    PubMed

    Min, Kyung-San; Chang, Hoon-Sang; Bae, Ji-Myung; Park, Sang-Hyuk; Hong, Chan-Ui; Kim, Eun-Cheol

    2007-11-01

    The aim of this study was to investigate the cytotoxic and nitric oxide (NO)-inducing effects of bismuth oxide (Bi(2)O(3))-containing Portland cement (BPC) on human dental pulp cells. We also assessed whether heme oxygenase-1 (HO-1) is involved in BPC-induced cytotoxicity in dental pulp cells. Cytotoxicity and NO production induced by BPC were higher than those induced by Portland cement at 12 and 24 hours, and the former gradually decreased to the level observed for PC. HO-1 and inducible nitric oxide synthase messenger RNA expressions in the BPC group showed maximal increase at 24 hours, and it gradually decreased with increasing cultivation time. Hemin treatment reversed the BPC-induced cytotoxicity, whereas zinc protoporphyrin IX treatment increased the cytotoxicity. These results suggested that NO production by BPC correlates with HO-1 expression in dental pulp cells. Moreover, BPC-induced HO-1 expression in dental pulp cells plays a protective role against the cytotoxic effects of BPC. PMID:17963960

  1. Nanostructured bismuth vanadate-based materials for solar-energy-driven water oxidation: a review on recent progress

    NASA Astrophysics Data System (ADS)

    Huang, Zhen-Feng; Pan, Lun; Zou, Ji-Jun; Zhang, Xiangwen; Wang, Li

    2014-11-01

    Water oxidation is the key step for both photocatalytic water splitting and CO2 reduction, but its efficiency is very low compared with the photocatalytic reduction of water. Bismuth vanadate (BiVO4) is the most promising photocatalyst for water oxidation and has become a hot topic for current research. However, the efficiency achieved with this material to date is far away from the theoretical solar-to-hydrogen conversion efficiency, mainly due to the poor photo-induced electron transportation and the slow kinetics of oxygen evolution. Fortunately, great breakthroughs have been made in the past five years in both improving the efficiency and understanding the related mechanism. This review is aimed at summarizing the recent experimental and computational breakthroughs in single crystals modified by element doping, facet engineering, and morphology control, as well as macro/mesoporous structure construction, and composites fabricated by homo/hetero-junction construction and co-catalyst loading. We aim to provide guidelines for the rational design and fabrication of highly efficient BiVO4-based materials for water oxidation.

  2. Integration of functional complex oxide nanomaterials on silicon

    NASA Astrophysics Data System (ADS)

    Vila-Fungueiriño, Jose Manuel; Bachelet, Romain; Saint-Girons, Guillaume; Gendry, Michel; Gich, Marti; Gazquez, Jaume; Ferain, Etienne; Rivadulla, Francisco; Rodriguez-Carvajal, Juan; Mestres, Narcis; Carretero-Genevrier, Adrian

    2015-06-01

    The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications that can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD) and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE). Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be exposed, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.

  3. A review of oxide, silicon nitride, and silicon carbide brazing

    SciTech Connect

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed.

  4. Multiwavelength L-band fiber laser with bismuth-oxide EDF and photonic crystal fiber

    NASA Astrophysics Data System (ADS)

    Ramzia Salem, A. M.; Al-Mansoori, M. H.; Hizam, H.; Mohd Noor, S. B.; Abu Bakar, M. H.; Mahdi, M. A.

    2011-05-01

    A multiwavelength laser comb using a bismuth-based erbium-doped fiber and 50 m photonic crystal fiber is demonstrated in a ring cavity configuration. The fiber laser is solely pumped by a single 1455 nm Raman pump laser to exploit its higher power delivery compared to that of a single-mode laser diode pump. At 264 mW Raman pump power and 1 mW Brillouin pump power, 38 output channels in the L-band have been realized with an optical signal-to-noise ratio above 15 dB and a Stokes line spacing of 0.08 nm. The laser exhibits a tuning range of 12 nm and produces stable Stokes lines across the tuning range between Brillouin pump wavelengths of 1603 nm and 1615 nm.

  5. Formation of Mosaic Silicon Oxide Structure during Metal-Assisted Electrochemical Etching of Silicon at High Current Density

    NASA Astrophysics Data System (ADS)

    Cao, Dao Tran; Anh, Cao Tuan; Ngan, Luong Truc Quynh

    2016-05-01

    We have used constant-current, metal-assisted electrochemical etching of silicon in HF/H2O2/ethanol electrolyte to fabricate porous silicon. We found that, at large enough current density, the sponge-like porous silicon structure is replaced by a mosaic structure, which includes islands of various shapes emerging between trenches that have been etched downward. Energy-dispersive x-ray analysis showed that the surface of the mosaic pieces was covered with silicon oxide, while little silicon oxide developed on the surface of trenches. We suggest that the appearance of the mosaic structure can be explained by the increase in the oxidation rate of silicon when the anodic current density increases, combined with no change in the dissolution rate of silicon oxide into the solution. Consequently, above a certain value of anodic current density, there is sufficient residual silicon oxide on the etched surface to create a continuous thin film. However, if the silicon oxide layer is too thick (e.g., due to too high anodic current density or too long etching time), it will become cracked (formation of mosaic pieces), likely due to differences in thermal expansion coefficient between the amorphous silicon oxide layer and crystalline silicon substrate. The oxide is cracked at locations with many defects, and the cracks reveal the silicon substrate. Therefore, at the locations where cracks occur, etching will go sideways and downward, creating trenches.

  6. Extension of silicon emission model to silicon pillar oxidation

    NASA Astrophysics Data System (ADS)

    Kageshima, Hiroyuki; Shiraishi, Kenji; Endoh, Tetsuo

    2016-08-01

    Missing Si in the oxidation of Si pillar structures is investigated by extending the Si emission model to the oxidation of planar structures. The original Si emission model [H. Kageshima et al., Jpn. J. Appl. Phys. 38, L971 (1999)] assumes the emission of excess Si from the interface into the oxide during the oxidation process, the diffusion of the excess Si through the oxide, and the control of the oxidation rate by the concentration of remaining excess Si around the interface. By assuming the sublimation of the excess Si from the oxide surface in addition to the assumptions of the original Si emission model, the origin of the missing Si is consistently explained. It is suggested that the amount of the missing Si is enhanced by the geometrical effect of the pillar structure because the concentration of excess Si is inversely proportional to the radial position. This also suggests that the missing Si is inevitable for the thin pillar structures. Careful approaches to the oxidation process are recommended for pillar structures.

  7. Synthesis, conductivity, and X-ray photoelectron spectrum of Bi 2Sr 2CuO 7+X. A new ternary bismuth-oxide system exhibiting metallic conductivity

    NASA Astrophysics Data System (ADS)

    Porter, Leigh Christopher; Appelman, Evan; Beno, Mark A.; Cariss, Carolyn S.; Carlson, K. Douglas; Cohen, Harry; Geiser, Urs; Thorn, R. J.; Williams, Jack M.

    1988-06-01

    The preparation and some of the properties relating to the superconductive state of the newly discovered ternary bismuth oxide, Bi 2Sr 2Cu 2O 7+x, are described. Conductivity behavior ranging from semiconductive to metallic is observed when four-probe AC resistivity measurements are carried out on pressed pellet specimens that have been annealed under different conditions. From a determination of the total oxygen present by an iodometric titration, it was found that metallic conductivity was associated with a higher oxygen content. An X-ray photoelectron experiment was carried out in order to determine whether bismuth or copper was present as the mixed-valent species. The XPS spectrum of the Bi 4 f orbital electrons in the oxide was nearly identical to that observed in Bi 2O 3, with no evidence of any Bi 5+.

  8. Synthesis conductivity, and x ray photoelectron spectrum of Bi2Sr2Cu(sub 7+x). A new ternary bismuth-oxide system exhibiting metallic conductivity

    NASA Astrophysics Data System (ADS)

    Porter, Leigh Christopher; Appleman, Evan; Beno, Mark A.; Cariss, Carolyn S.; Carlson, K. Douglas; Cohen, Harry; Geiser, Urs; Thorn, R. J.; Williams, John M.

    The preparation and some of the properties relating to the superconductive state of the newly discovered ternary bismuth oxides, Bi2Sr2Cu2O(7+x), are described. Conductivity behavior ranging from semiconductive to metallic is observed when four-probe ac resistivity measurements are carried out on pressed pellet specimens that have been annealed under different conditions. From a determination of the total oxygen present by an iodometric titration, it was found that metallic conductivity was associated with a higher oxygen content. An x ray photoelectron experiment was carried out in order to determine whether bismuth or copper was present as the mixed valent species. The XPS spectrum of the Bi 4f orbital electrons in the oxides was nearly identical to that observed in Bi2O3, with no evidence of any Bi5(+).

  9. Dopant segregation at silicon-oxide interfaces

    NASA Astrophysics Data System (ADS)

    Pei, Lirong

    . However, Z-contrast imaging shows a segregation of Sb to the interface. Unlike the As doped samples, pentagon-shaped Sb precipitates are also detected 8nm from interface on the Si side. For the As doped Si/HfxSi1-xO samples, an unexpected silicate interfacial layer is observed between hafnium oxide thin film and silicon substrate. Therefore, As segregation at the novel interface turns out to be exactly same as As at Si/SiO2 interfaces. Combining Z-contrast imaging and EELS analysis, the interfacial layer is determined to be introduced by the kinetic problem in the MOCVD deposition of HfxSi1-x O thin film.

  10. First stages of silicon oxidation with the activation relaxation technique

    NASA Astrophysics Data System (ADS)

    Ganster, Patrick; Béland, Laurent Karim; Mousseau, Normand

    2012-08-01

    Using the art nouveau method, we study the initial stages of silicon oxide formation. After validating the method's parameters with the characterization of point defects diffusion mechanisms in pure Stillinger-Weber silicon, which allows us to recover some known results and to detail vacancy and self-interstitial diffusion paths, the method is applied onto a system composed of an oxygen layer deposited on a silicon substrate. We observe the oxygen atoms as they move rapidly into the substrate. From these art nouveau simulations, we extract the energy barriers of elementary mechanisms involving oxygen atoms and leading to the formation of an amorphouslike silicon oxide. We show that the kinetics of formation can be understood in terms of the energy barriers between various coordination environments.

  11. Carbon dioxide sensing mechanisms of an electrocatalytic sensor/cell based on a tungsten stabilized bismuth oxide solid electrolyte

    NASA Astrophysics Data System (ADS)

    Shoemaker, Erika Leigh

    This work describes the specific O2/CO2 sensing mechanisms of a solid-state, thick-film, electrocatalytic cermet (ceramic/metallic) gas sensor based on a tungsten stabilized bismuth oxide (WBO) solid electrolyte. The sensors embody the same configuration of classical planar oxygen sensors with two catalytic electrodes sandwiching an oxygen ion conducting solid electrolyte and a buried metal oxide reference. The technique of cyclic voltammetry is used where a cyclic voltage is ramped across the electrodes to promote electrochemical reactions on the surface of the sensor. These reactions alter the ionic current flow through the solid electrolyte, generating voltage-current related responses (voltammograms) which are gas specific. The WBO sensors have the identical configuration of previously investigated sensors of this type based on a yttria stabilized zirconia (YSZ) solid electrolyte which show good response to O 2 but do not respond to CO2 to any degree. This dissertation examines the specific function of each solid electrolyte layer and relates them to both the WBO sensors ability to respond uniquely to CO2 and the YSZ sensors incapability to respond to CO2. The research suggests that the tungsten component of the WBO electrolyte along with the porosity of the WBO layer together are responsible for the unique CO 2 response of this sensor.

  12. Temperature-induced phase changes in bismuth oxides and efficient photodegradation of phenol and p-chlorophenol.

    PubMed

    Hu, Yin; Li, Danzhen; Sun, Fuqian; Weng, Yaqing; You, Shengyong; Shao, Yu

    2016-01-15

    A novel, simple and efficient approach for photodegrading phenol and p-chlorophenol, based on BixOy, was reported for the first time. Monoclinic Bi2O4 was prepared by the hydrothermal treatment of NaBiO3·2H2O. A series of interesting phase transitions happened and various bismuth oxides (Bi4O7, β-Bi2O3 and α-Bi2O3) were obtained by sintering Bi2O4 at different temperatures. The results demonstrated that the Bi2O4 and Bi4O7 phase had strong abilities towards the oxidative decomposition of phenol and p-chlorophenol and very high rates of TOC removal were observed. The characterization by XRD and XPS revealed that Bi(4+) in Bi2O4 and Bi(3.5+) in Bi4O7 were reduced to Bi(3+) during the reaction process. Singlet oxygen ((1)O2) was identified as the major reactive species generated by Bi2O4 and Bi4O7 for the photodegradation of p-chlorophenol and phenol. This novel approach could be used as a highly efficient and green technology for treating wastewaters contaminated by high concentrations of phenol and chlorophenols. PMID:26384997

  13. Visible-light-induced water oxidation by a hybrid photocatalyst consisting of bismuth vanadate and copper(II) meso-tetra(4-carboxyphenyl)porphyrin.

    PubMed

    Nakashima, Shu; Negishi, Ryo; Tada, Hiroaki

    2016-03-01

    Copper(II) meso-tetra(4-carboxyphenyl)porphyrin surface-modified monoclinic scheelite bismuth vanadate (CuTCPP/BiVO4) has been synthesized via a two-step route involving chemisorption of TCPP on BiVO4 and successive Cu(II) ion incorporation into the TCPP, and the surface modification drastically enhances the water oxidation to oxygen (O2) under visible-light irradiation (λ > 430 nm). PMID:26853997

  14. Cycling endurance of silicon{endash}oxide{endash}nitride{endash}oxide{endash}silicon nonvolatile memory stacks prepared with nitrided SiO{sub 2}/Si(100) interfaces

    SciTech Connect

    Habermehl, S.; Nasby, R.D.; Rightley, M.J.

    1999-08-01

    The effects of nitrided SiO{sub 2}/Si(100) interfaces upon cycling endurance in silicon{endash}oxide{endash}nitride{endash}oxide{endash}silicon (SONOS) nonvolatile memory transistors are investigated. Analysis of metal{endash}oxide{endash}silicon field-effect transistor subthreshold characteristics indicate cycling degradation to be a manifestation of interface trap generation at the tunnel oxide/silicon interface. After 10{sup 6} write/erase cycles, SONOS film stacks prepared with nitrided tunnel oxides exhibit enhanced cycling endurance over stacks prepared with non-nitrided tunnel oxides. If the capping oxide is formed by steam oxidation, rather than by deposition, SONOS stacks prepared with non-nitrided tunnel oxides exhibit endurance characteristics similar to stacks with nitrided tunnel oxides. For this case, a mechanism for latent nitridation of the tunnel oxide/silicon interface is proposed. {copyright} {ital 1999 American Institute of Physics.}

  15. Optical properties of Lead bismuth borate glasses doped with neodymium oxide.

    PubMed

    Farouk, M; Abd El-Maboud, A; Ibrahim, M; Ratep, A; Kashif, I

    2015-10-01

    Neodymium doped Lead bismuth borate glasses with the composition of 25PbO-25Bi2O3-50B2O3:xNd2O3, where x=0.5, 1, 1.5 and 2 mol%, have been prepared by melt quenching technique. The behavior of the density and molar volume allows concluding that, addition of Nd2O3 leads to the formation of non-bridging oxygen. Rare earth ion parameters have been calculated and studied. The optical band gap (Eg), and band tails (Ee) were determined. Judd-Ofelt theory for the intensity analysis of induced electric dipole transitions has been applied to the measured oscillator strengths of the absorption bands to determine the three phenomenological intensity parameters Ω2, Ω4 and Ω6 for glass. It was observed that the deviation parameters, rms, was found to be 0.56:0.58(×10(-6)). The estimated Judd-Ofelt parameters were found to be Nd2O3concentration dependent. The hypersensitive transition, (4)I9/2→(4)G5/2+(2)G7/2, is closely related to Ω2 parameter. PMID:25965518

  16. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1993-01-01

    Varistors and/or resistors that includes doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  17. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-07-27

    Varistors and/or resistors are described that include doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  18. Synthesis of nanoscale silicon oxide oxidation state distributions: The transformation from hydrophilicity to hydrophobicity

    NASA Astrophysics Data System (ADS)

    Laminack, William; Gole, James L.; White, Mark G.; Ozdemir, Serdar; Ogden, Andrew G.; Martin, Holly J.; Fang, Zongtang; Wang, Tsang-Hsiu; Dixon, David A.

    2016-06-01

    Silicon oxide nanostructures which span the range from hydrophilic to hydrophobic have been synthesized. The surface chemistry of these silicon-based nanostructures was analyzed using a combination of X-ray photoelectron spectroscopy, reflectance infrared spectroscopy, scanning electron microscopy, and thermogravimetric analysis. The dominant oxidation state for the nanostructured oxides shifts from an average oxidation state of +III to a combination of +II and +III oxidation states. A correlation of the ability to adsorb water with variations in the surface Si:O ratios was observed showing a transition from hydrophilic to hydrophobic character.

  19. Ion implantation reduces radiation sensitivity of metal oxide silicon /MOS/ devices

    NASA Technical Reports Server (NTRS)

    1971-01-01

    Implanting nitrogen ions improves hardening of silicon oxides 30 percent to 60 percent against ionizing radiation effects. Process reduces sensitivity, but retains stability normally shown by interfaces between silicon and thermally grown oxides.

  20. High-relative-dielectric-constant bismuth-niobium-oxide films prepared using Nb-rich precursor solution

    NASA Astrophysics Data System (ADS)

    Ariga, Tomoki; Inoue, Satoshi; Matsumoto, Shin; Onoue, Masatoshi; Miyasako, Takaaki; Tokumitsu, Eisuke; Shimoda, Tatsuya

    2015-09-01

    Various ceramic materials have been developed for electronic devices. Bismuth-niobium-oxide (BNO) films prepared by a chemical solution deposition (CSD) method have the cubic pyrochlore phase, high relative dielectric constant, and low tangent loss (tan δ). We found that a BNO cubic pyrochlore crystal was Nb-rich, even though its pyrochlore formula is A2B2O7. The crystallization temperature of BNO increased with increasing Nb ratio. The relative dielectric constants of BNO films were related to the Nb ratio in the precursor solution. The dielectric constant of the BNO films was 250 when the Bi and Nb ratios in BNO precursor solutions were 4 and 6, respectively, and the sintering temperature was 600 °C. In addition, the tan δ was less than 0.01 at 1 kHz, which is higher than the reported values of BNO systems despite using the CSD method. These results show that the properties of BNO films prepared by the CSD method were associated with the Nb ratio in the precursor solution. Furthermore, the dielectric characteristics indicated that the Nb-rich BNO films have potential applications in electronic devices.

  1. The study of optical band edge property of bismuth oxide nanowires α-Bi2O3.

    PubMed

    Ho, Ching-Hwa; Chan, Ching-Hsiang; Huang, Ying-Sheng; Tien, Li-Chia; Chao, Liang-Chiun

    2013-05-20

    The α-phase Bi(2)O(3) (α-Bi(2)O(3)) is a crucial and potential visiblelight photocatalyst material needless of intentional doping on accommodating band gap. The understanding on fundamental optical property of α-Bi(2)O(3) is important for its extended applications. In this study, bismuth oxide nanowires with diameters from tens to hundreds nm have been grown by vapor transport method driven with vapor-liquid-solid mechanism on Si substrate. High-resolution transmission electron microscopy and Raman measurement confirm α phase of monoclinic structure for the as-grown nanowires. The axial direction for the as-grown nanowires was along < 122 >. The band-edge structure of α-Bi(2)O(3) has been probed experimentally by thermoreflectance (TR) spectroscopy. The direct band gap was determined accurately to be 2.91 eV at 300 K. Temperaturedependent TR measurements of 30-300 K were carried out to evaluate temperature-energy shift and line-width broadening effect for the band edge of α-Bi(2)O(3) thin-film nanowires. Photoluminescence (PL) experiments at 30 and 300 K were carried out to identify band-edge emission as well as defect luminescence for the α-Bi(2)O(3) nanowires. On the basis of experimental analyses of TR and PL, optical characteristics of direct band edge of α-Bi(2)O(3) nanowires have thus been realized. PMID:23736418

  2. Enhancement of radiation effects by bismuth oxide nanoparticles for kilovoltage x-ray beams: A dosimetric study using a novel multi-compartment 3D radiochromic dosimeter

    NASA Astrophysics Data System (ADS)

    Alqathami, M.; Blencowe, A.; Yeo, U. J.; Franich, R.; Doran, S.; Qiao, G.; Geso, M.

    2013-06-01

    The aim of this study is to present the first experimental validation and quantification of the dose enhancement capability of bismuth oxide nanoparticles (Bi2O3-Nps). A recently introduced multi-compartment 3D radiochromic dosimeter for measuring radiation dose enhancement produced from the interaction of X-rays with metal nanoparticles was employed to investigate the 3D spatial distribution of ionizing radiation dose deposition. Dose-enhancement factor for the dosimeters doped with Bi2O3-NPs was ~1.9 for both spectrophotometry and optical CT analyses. Our results suggest that bismuth-based nanomaterials are efficient dose enhancing agents and have great potential for application in clinical radiotherapy.

  3. Spectroscopic and microscopic investigation of the corrosion of D-9 stainless steel by lead bismuth eutectic (LBE) at elevated temperatures. Initiation of thick oxide formation

    NASA Astrophysics Data System (ADS)

    Johnson, Allen L.; Koury, Dan; Welch, Jenny; Ho, Thao; Sidle, Stacy; Harland, Chris; Hosterman, Brian; Younas, Umar; Ma, Longzhou; Farley, John W.

    2008-06-01

    Corrosion of 316/316L stainless steel by lead-bismuth eutectic (LBE) at elevated temperature was investigated by examination of samples after 1000, 2000, and 3000 h of exposure at 550 °C, using SEM, XPS with sputter depth profiling, and TEM. The process by which localized oxide failure becomes extensive thick oxide formation was investigated. Under our experimental conditions, iron was observed to migrate outward while chromium did not migrate above the original metal surface. The thin oxide layer on the D-9 sample resembled 316L cold-rolled samples, while the thick oxide on D-9 resembled annealed 316L oxide. With continued exposure, thick oxide grew to cover the entire surface.

  4. The Oxidation of CVD Silicon Carbide in Carbon Dioxide

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Nguyen, QuynchGiao N.

    1997-01-01

    Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 100 and 500 hours at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic laws are discussed. Oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants typically found in combustion environments: oxygen and water vapor.

  5. Battery performance enhancement with additions of bismuth

    NASA Astrophysics Data System (ADS)

    Manders, J. E.; Lam, L. T.; de Marco, R.; Douglas, J. D.; Pillig, R.; Rand, D. A. J.

    1994-02-01

    Automotive and valve-regulated batteries (VRBs) of typical commercial design have been constructed using positive and negative plates produced from leady oxide that is doped with 0.06 wt.% bismuth. The doping is performed by adding bismuth (III) oxide powder during the paste-mixing stage. Both battery designs have been subjected to endurance tests (automotive batteries: JIS cycle-life test; VRBs: repetitive 3-h discharge) in parallel with batteries that are similar in all respects but do not contain bismuth. A strategy and necessary hardware have been developed to measure the gassing properties of the VRBs during both charge and discharge. The procedure involves monitoring the internal pressure with high-precision pressure transducers. For automotive batteries, doping with bismuth produces no significant differences in JIS cycle life. By contrast, both the endurance and the capacity of VRBs are found to be enhanced by the presence of bismuth. Furthermore, bismuth reduces the build-up in gas pressure (mainly oxygen) in VRBs during constant-current charging. These results suggest that future specifications for leady oxide should include a minimum - rather than a maximum - bismuth content. In this respect, although studies performed to date show that significant advantages can be achieved with 0.06 wt.% bismuth in the active material, the optimum bismuth level has yet to be established.

  6. Silicon-containing ferritic/martensitic steel after exposure to oxygen-containing flowing lead-bismuth eutectic at 450 and 550 °C

    NASA Astrophysics Data System (ADS)

    Schroer, Carsten; Koch, Verena; Wedemeyer, Olaf; Skrypnik, Aleksandr; Konys, Jürgen

    2016-02-01

    A ferritic/martensitic (f/m) steel with 9 and 3 mass% of chromium (Cr) and silicon (Si), respectively, was tested on performance in flowing lead-bismuth eutectic (LBE) at 450 and 550 °C, each at concentrations of solved oxygen of both 10-7 and 10-6 mass%. The 9Cr-3Si steel generally exhibits the same basic corrosion modes as other f/m materials with 9 mass% Cr and typically lower Si content, namely Steel T91. The Si-rich steel shows an overall improved performance in comparison to T91 at 450 °C and 10-7 mass% solved oxygen, but especially at 450 °C and 10-6 mass% solved oxygen. The advantage of higher Si-content in 9Cr steel is less clear at 550 °C. Especially high oxygen content in flowing LBE at 550 °C, between >10-6 mass% and oxygen saturation, seems detrimental for the high-Si material in respect of the initiation and progress of a solution-based corrosion.

  7. Oxide-assisted growth of silicon nanowires by carbothermal evaporation

    NASA Astrophysics Data System (ADS)

    Hutagalung, Sabar D.; Yaacob, Khatijah A.; Aziz, Azma F. Abdul

    2007-11-01

    Silicon nanowires (SiNWs) have successfully been synthesized by carbothermal evaporation method. By ramping-up the furnace system at 20 °C min -1 to 1100 °C for 6 h, the vertically aligned coexist with crooked SiNWs were achieved on the silicon substrate located at 12 cm from source material. The processing parameters such as temperature, heating rate, duration, substrate position and location are very important to produce SiNWs. Morphology and chemical composition of deposited products were investigated by field-emission scanning electron microscopy (FESEM) equipped with energy dispersive X-ray analysis (EDX). The existence of small sphere silicon oxide capped nanowires suggested that the formation of SiNWs was governed by oxide-assisted growth (OAG) mechanism.

  8. Optimization of amorphous silicon double junction solar cells for an efficient photoelectrochemical water splitting device based on a bismuth vanadate photoanode.

    PubMed

    Han, Lihao; Abdi, Fatwa F; Perez Rodriguez, Paula; Dam, Bernard; van de Krol, Roel; Zeman, Miro; Smets, Arno H M

    2014-03-01

    A photoelectrochemical water splitting device (PEC-WSD) was designed and fabricated based on cobalt-phosphate-catalysed and tungsten-gradient-doped bismuth vanadate (W:BiVO4) as the photoanode. A simple and cheap hydrogenated amorphous silicon (a-Si:H) double junction solar cell has been used to provide additional bias. The advantage of using thin film silicon (TF-Si) based solar cells is that this photovoltaic (PV) technology meets the crucial requirements for the PV component in PEC-WSDs based on W:BiVO4 photoanodes. TF-Si PV devices are stable in aqueous solutions, are manufactured by simple and cheap fabrication processes and their spectral response, voltage and current density show an excellent match with the photoanode. This paper is mainly focused on the optimization of the TF-Si solar cell with respect to the remaining solar spectrum transmitted through the W:BiVO4 photoanode. The current matching between the top and bottom cells is studied and optimized by varying the thickness of the a-Si:H top cell. We support the experimental optimization of the current balance between the two sub-cells with simulations of the PV devices. In addition, the impact of the light induced degradation of the a-Si:H double junction, the so-called Staebler-Wronski Effect (SWE), on the performance of the PEC-WSD has been studied. The light soaking experiments on the a-Si:H/a-Si:H double junctions over 1000 hours show that the efficiency of a stand-alone a-Si:H/a-Si:H double junction cell is significantly reduced due to the SWE. Nevertheless, the SWE has a significantly smaller effect on the performance of the PEC-WSD. PMID:24452785

  9. Arsenic silicide formation by oxidation of arsenic implanted silicon

    NASA Astrophysics Data System (ADS)

    Hagmann, D.; Euen, W.; Schorer, G.; Metzger, G.

    1989-07-01

    Wet oxidations of (100) silicon implanted with an arsenic dose of 2 × 1016 cm-2 and an energy of 30 keV were carried out in the temperature range between 600 and 900° C. The oxidation rate is increased on the arsenic implanted samples up to a factor of 2000 as compared to undoped samples. During these oxidations the arsenic suicide phase AsSi is precipitated at the oxide/silicon interface. After short oxidation times at 600° C, a continuous AsSi layer is found. It is dissolved during extended oxidation times and finally almost all As is incorporated in the oxide. After 900° C oxidations, substantial AsSi crystallites remain at the Si/SiO2 interface. They are still observed up to the larg-est oxide thickness grown (2.3 µm). The AsSi phase and the distribution of the im-planted arsenic were analyzed by TEM, SIMS and XRF measurements.

  10. Electron stimulated oxidation of silicon surfaces

    SciTech Connect

    Munoz, M.C.; Sacedon, J.L.

    1981-04-15

    Experimental evidence of electron stimulated oxidation (ESO) has been given for Si(111) 7 x 7 surface. In a first stage, the oxide thickness as a function of time shows a linear relationship; in a second stage, the growth rate quickly decreases and a pressure dependent saturation oxide thickness is reached. During the oxidation process an electrical potential does exist across the oxide, as is required in the Cabrera--Mott theory. The linear kinetics and the electrical potential are shown to be explicable in terms of a modified coupled-current approach based on the Cabrera--Mott theory, provided a semiphenomenological pressure dependent parameter is included. This represents a contribution of the surface reaction to the transport equation. The saturation has been explained as due to the decrease of the negative surface charge (donor levels) which produces a decrease of the electron current.

  11. Tribological interaction between polytetrafluoroethylene and silicon oxide surfaces

    SciTech Connect

    Uçar, A.; Çopuroğlu, M.; Suzer, S.; Baykara, M. Z.; Arıkan, O.

    2014-10-28

    We investigated the tribological interaction between polytetrafluoroethylene (PTFE) and silicon oxide surfaces. A simple rig was designed to bring about a friction between the surfaces via sliding a piece of PTFE on a thermally oxidized silicon wafer specimen. A very mild inclination (∼0.5°) along the sliding motion was also employed in order to monitor the tribological interaction in a gradual manner as a function of increasing contact force. Additionally, some patterns were sketched on the silicon oxide surface using the PTFE tip to investigate changes produced in the hydrophobicity of the surface, where the approximate water contact angle was 45° before the transfer. The nature of the transferred materials was characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). XPS results revealed that PTFE was faithfully transferred onto the silicon oxide surface upon even at the slightest contact and SEM images demonstrated that stable morphological changes could be imparted onto the surface. The minimum apparent contact pressure to realize the PTFE transfer is estimated as 5 kPa, much lower than reported previously. Stability of the patterns imparted towards many chemical washing processes lead us to postulate that the interaction is most likely to be chemical. Contact angle measurements, which were carried out to characterize and monitor the hydrophobicity of the silicon oxide surface, showed that upon PTFE transfer the hydrophobicity of the SiO{sub 2} surface could be significantly enhanced, which might also depend upon the pattern sketched onto the surface. Contact angle values above 100° were obtained.

  12. Oxidation Protection of Porous Reaction-Bonded Silicon Nitride

    NASA Technical Reports Server (NTRS)

    Fox, D. S.

    1994-01-01

    Oxidation kinetics of both as-fabricated and coated reaction-bonded silicon nitride (RBSN) were studied at 900 and 1000 C with thermogravimetry. Uncoated RBSN exhibited internal oxidation and parabolic kinetics. An amorphous Si-C-O coating provided the greatest degree of protection to oxygen, with a small linear weight loss observed. Linear weight gains were measured on samples with an amorphous Si-N-C coating. Chemically vapor deposited (CVD) Si3N4 coated RBSN exhibited parabolic kinetics, and the coating cracked severely. A continuous-SiC-fiber-reinforced RBSN composite was also coated with the Si-C-O material, but no substantial oxidation protection was observed.

  13. Oxidation kinetics of coated silicon carbide fiber-reinforced silicon carbide (SiC/SiC)

    SciTech Connect

    Fox, D.S.

    1994-12-31

    Silicon carbide fiber-reinforced silicon carbide (SiC/SiC) was exposed for 100 hours to dry, flowing oxygen. Oxidation kinetics were determined via thermogravimetric analysis at 981{degrees}, 1204{degrees} and 1316{degrees}C (1800{degrees}, 2200{degrees} and 2400{degrees}F). The effectiveness of three external coating systems applied for oxidation protection is discussed. In all cases, weight gains were observed, and the pyrolytic carbon interface layer remained intact. A CVD SiC external coating is the most promising due to low oxidation kinetics resulting from solid silica formation. A borosilicate glass was observed on the surface of two of the materials that have boron-containing coatings.

  14. Charge trapping in low temperature MOS (Metal-Oxide-Silicon) oxides

    NASA Astrophysics Data System (ADS)

    Zvanut, M. E.; Feigl, F. J.; Butler, S. R.; Vogel, R. H.

    1984-08-01

    Metal-oxide-silicon (MOS) capacitors were fabricated on silicon dioxide films produced at 700 C by either low pressure chemical vapor deposition (LPCVD) or high pressure thermal oxidation (HIPOX). The LPCVD process involved reaction of dichlorosilane with nitrous oxide. The HIPOX process involved dry oxygen. The LPCVD and HIPOX films were subjected to a variety of annealing treatments. We have systematically investigated the effects of these treatments by measurement of oxide charge and interface trap density before and after electron current transport across films, grown and annealed at 700 C, were comparable to those of standard dry thermal oxides grown and annealed at 1000 C. However, charge trapping in the HIPOX films was an order of magnitude larger than in the standard oxides, although well-prepared HIPOX films exhibited specific electron traps characteristics of standard dry oxides.

  15. Coaxial nanocable: silicon carbide and silicon oxide sheathed with boron nitride and carbon

    PubMed

    Zhang; Suenaga; Colliex; Iijima

    1998-08-14

    Multielement nanotubes comprising multiple phases, with diameters of a few tens of nanometers and lengths up to 50 micrometers, were successfully synthesized by means of reactive laser ablation. The experimentally determined structure consists of a beta-phase silicon carbide core, an amorphous silicon oxide intermediate layer, and graphitic outer shells made of boron nitride and carbon layers separated in the radial direction. The structure resembles a coaxial nanocable with a semiconductor-insulator-metal (or semiconductor-insulator-semiconductor) geometry and suggests applications in nanoscale electronic devices that take advantage of this self-organization mechanism for multielement nanotube formation. PMID:9703508

  16. Preparation of superconducting thin films of calcium strontium bismuth copper oxides by coevaporation

    SciTech Connect

    Rice, C.E.; Levi, A.F.J.; Fleming, R.M.; Marsh, P.; Baldwin, K.W.; Anzlowar, M.; White, A.E.; Short, K.T.; Nakahara, S.; Stormer, H.L.; and others

    1988-05-23

    Superconducting films of Ca-Sr-Bi-Cu oxides have been prepared by coevaporation of CaF/sub 2/, SrF/sub 2/, Bi, and Cu, followed by post-oxidation in wet O/sub 2/. The films were characterized by four-probe resistivity measurements, Rutherford backscattering, transmission electron microscopy, x-ray diffraction, and Hall measurements. Zero resistance was achieved at approx.80 K, although evidence of traces of superconductivity at higher temperatures was seen in resistivity and Hall data. The critical current at 4.2 K was 1.0 x 10/sup 6/ A cm/sup -2/. The films were epitaxial on <100> and <110> SrTiO/sub 3/ substrates. The electrical and structural properties of the films were insensitive to film composition over a wide range of stoichiometries.

  17. Efficient Direct Reduction of Graphene Oxide by Silicon Substrate.

    PubMed

    Lee, Su Chan; Some, Surajit; Kim, Sung Wook; Kim, Sun Jun; Seo, Jungmok; Lee, Jooho; Lee, Taeyoon; Ahn, Jong-Hyun; Choi, Heon-Jin; Jun, Seong Chan

    2015-01-01

    Graphene has been studied for various applications due to its excellent properties. Graphene film fabrication from solutions of graphene oxide (GO) have attracted considerable attention because these procedures are suitable for mass production. GO, however, is an insulator, and therefore a reduction process is required to make the GO film conductive. These reduction procedures require chemical reducing agents or high temperature annealing. Herein, we report a novel direct and simple reduction procedure of GO by silicon, which is the most widely used material in the electronics industry. In this study, we also used silicon nanosheets (SiNSs) as reducing agents for GO. The reducing effect of silicon was confirmed by various characterization methods. Furthermore, the silicon wafer was also used as a reducing template to create a reduced GO (rGO) film on a silicon substrate. By this process, a pure rGO film can be formed without the impurities that normally come from chemical reducing agents. This is an easy and environmentally friendly method to prepare large scale graphene films on Si substrates. PMID:26194107

  18. Efficient Direct Reduction of Graphene Oxide by Silicon Substrate

    PubMed Central

    Chan Lee, Su; Some, Surajit; Wook Kim, Sung; Jun Kim, Sun; Seo, Jungmok; Lee, Jooho; Lee, Taeyoon; Ahn, Jong-Hyun; Choi, Heon-Jin; Chan Jun, Seong

    2015-01-01

    Graphene has been studied for various applications due to its excellent properties. Graphene film fabrication from solutions of graphene oxide (GO) have attracted considerable attention because these procedures are suitable for mass production. GO, however, is an insulator, and therefore a reduction process is required to make the GO film conductive. These reduction procedures require chemical reducing agents or high temperature annealing. Herein, we report a novel direct and simple reduction procedure of GO by silicon, which is the most widely used material in the electronics industry. In this study, we also used silicon nanosheets (SiNSs) as reducing agents for GO. The reducing effect of silicon was confirmed by various characterization methods. Furthermore, the silicon wafer was also used as a reducing template to create a reduced GO (rGO) film on a silicon substrate. By this process, a pure rGO film can be formed without the impurities that normally come from chemical reducing agents. This is an easy and environmentally friendly method to prepare large scale graphene films on Si substrates. PMID:26194107

  19. Models and experiments on degradation of oxidized silicon

    NASA Astrophysics Data System (ADS)

    Sah, C. T.

    1990-02-01

    The concepts of electronic and protonic traps are introduced to delineate and classify the fundamental mechanisms of charging, generation, annealing and hydrogenation of electronic or electron and hole traps located in the interfacial (gate-conductor/oxide, oxide/nitride and oxide/silicon), insulator (oxide, nitride and oxynitride) and semiconductor surface layers of silicon MOS transistors and integrated circuits. Two matrix tables, one without tunneling (3 × 3) and one with tunneling (3 × 4) are used to classify the trap charging and electronic injection mechanisms according to the initial and final (band or bound) states of the electronic transition and the energy exchange mechanisms (thermal, optical and Auger-impact). The importance of tunneling to and from traps (TTT) as an oxide charge build-up mechanism is discussed. A theoretical tunneling rate to traps is given showing that traps shallower than about 2 eV from the oxide conduction band edge or 3 eV from the oxide valence band edge cannot be charged by the TTT transitions alone. Experimental examples illustrating the use of these mechanism tables as well as the importance of breaking hydrogen and strained intrinsic bonds by hot electron impact and by thermal hole capture are discussed, including: (i) annealing of the oxide/Si interface traps via hydrogenation during 380C chip bonding and during Fowler-Nordheim tunneling electron injection (FN-TEI) and avalanche electron injection (AEI) stresses, (ii) interface trap generation and positive oxide charge build-up during electron injection via FN-TEI or AEI, and (iii) electrical deactivation of boron and other group-III acceptors (Al, Ga, In) in the silicon surface layer during FNTEI or AEI stresses. Examples at three d.c. bias conditions to delineate the dominant degradation mechanisms in silicon MOS transistors are given showing that trap charging via tunneling (FNTEI, FNTHI and TTT) dominates below about 3.3 V in both n-MOS and p-MOS but trap generation

  20. Nonlinear optical properties of zinc oxide doped bismuth thin films using Z-scan technique

    NASA Astrophysics Data System (ADS)

    Abed, S.; Bouchouit, K.; Aida, M. S.; Taboukhat, S.; Sofiani, Z.; Kulyk, B.; Figa, V.

    2016-06-01

    ZnO doped Bi thin films were grown on glass substrates by spray ultrasonic technique. This paper presents the effect of Bi doping concentration on structural and nonlinear optical properties of zinc oxide thin films. These thin films were characterized by X-ray diffractometer technique. XRD analysis revealed that the ZnO:Bi thin films indicated good preferential orientation along c-axis perpendicular to the substrate. The nonlinear optical properties such as nonlinear absorption coefficient (β) and third order nonlinear susceptibility (Imχ(3)) are investigated. The calculations have been performed with a Z scan technique using Nd:YAG laser emitting 532 nm. The reverse saturable absorption (RSA) mechanism was responsible for the optical limiting effect. The results suggest that this material considered as a promising candidate for future optical device applications.

  1. Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition.

    PubMed

    Podhorodecki, A; Zatryb, G; Misiewicz, J; Wojcik, J; Wilson, P R J; Mascher, P

    2012-11-30

    The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature. PMID:23110801

  2. Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Zatryb, G.; Misiewicz, J.; Wojcik, J.; Wilson, P. R. J.; Mascher, P.

    2012-11-01

    The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature.

  3. Silicon-silicon bonds in the oxide near the SiO 2/Si interface

    NASA Astrophysics Data System (ADS)

    Terada, Naozumi; Haga, Takashi; Miyata, Noriyuki; Moriki, Kazunori; Fujisawa, Masami; Morita, Mizuho; Ohmi, Tadahiro; Hattori, Takeo

    The contribution of the SiO 2/Si interface structure to optical absorption below the optical absorption edge of fused quartz was studied by measuring the reflectance of thermally grown ultrathin silicon oxide films. From the modified Kramers-Kronig analysis of reflectance, it was found that optical absorption at the photon energy of 7.8 eV arises from Si sbnd Si bonds in the oxide film within 1.4 nm of the interface. The approximate areal density of Si sbnd Si bonds is 7 × 10 14 cm -2 and is approximately equal to the areal density of silicon su☐ides determined by X-ray photoelectron spectroscopy.

  4. Hydrogen passivation and ozone oxidation of silicon surface

    SciTech Connect

    Kurokawa, Akira; Nakamura, Ken; Ichimura, Shingo

    1998-12-31

    The oxidation of H/Si(100) and H/Si(111) with high concentration ozone gas was investigated with X-ray photoelectron spectroscopy (XPS). The ozone oxidation of partially hydride-covered surface was observed. The hydrogen termination reduced the rate of oxygen insertion into silicon backbond. The reduction of oxygen insertion rate by the H-termination for H/Si(100) was larger than that for H/Si(111). The dissociation rate of ozone molecule on H/Si was estimated to be {approx_equal}0.2 with a directional mass analyzer.

  5. Oxidation induced precipitation in Al implanted epitaxial silicon

    NASA Astrophysics Data System (ADS)

    La Ferla, A.; Galvagno, G.; Giri, P. K.; Franzò, G.; Rimini, E.; Raineri, V.; Gasparotto, A.; Cali, D.

    2000-10-01

    The behavior of Al implanted in silicon has been investigated during thermal oxidation. It has been found that precipitation of Al into Al-O-defect complexes depends on the implant energy, i.e., on the distance of the dopant from the surface. It occurs at 650 keV, but it does not at 2.0 MeV or higher energies. This phenomenon has been explained taking into account the diffusivity of self-interstitials introduced during oxidation, the oxygen present in the Si, the Al concentration, and the annealing out of defects.

  6. New perspectives on thermal and hyperthermal oxidation of silicon surfaces

    NASA Astrophysics Data System (ADS)

    Khalilov, Umedjon

    The growth of (ultra)thin silica (SiO2) layers on crystalline silicon (c-Si) and controlling the thickness of SiO2 is an important issue in the fabrication of microelectronics and photovoltaic devices (e.g., MOSFETs, solar cells, optical fibers etc.). Such ultrathin oxide can be grown and tuned even at low temperature (including room temperature), by hyperthermal oxidation or when performed on non-planar Si surfaces (e.g., Si nanowires or spheres). However, hyperthermal silica growth as well as small Si-NW oxidation in general and the initial stages in particular have not yet been investigated in full detail. This work is therefore devoted to controlling ultrathin silica thickness on planar and non-planar Si surfaces, which can open new perspectives in nanodevice fabrication. The simulation of hyperthermal (1-100 eV) Si oxidation demonstrate that at low impact energy (<10 eV), oxygen does not damage the Si surface and this energy region could thus beneficially be used for Si oxidation. In contrast to thermal oxidation, 10 eV species can directly oxidize Si subsurface layers. A transition temperature of about 700 K was found: below this temperature, the oxide thickness only depends on the impact energy of the impinging species. Above this temperature, the oxide thickness depends on the impact energy, type of oxidant and the surface temperature. The results show that control over the ultrathin oxide (a-SiO2) thickness is possible by hyperthermal oxidation of silicon surfaces at temperatures below the transition temperature. In small Si-NWs, oxidation is a self-limiting process that occurs at low temperature, resulting in small Si core - SiO2 shell (semiconductor + dielectric) or c-Si|SiOx| a-SiO2 nanowire, which has also being envisaged to be used as nanowire field-effect transistors and photovoltaic devices in near-future nanotechnology. Above the transition temperature such core-shell nanowires are completely converted to a-SiO2 nanowires. It can be concluded that

  7. Engineering functionalized multi-phased silicon/silicon oxide nano-biomaterials to passivate the aggressive proliferation of cancer

    PubMed Central

    Premnath, P.; Tan, B.; Venkatakrishnan, K.

    2015-01-01

    Currently, the use of nano silicon in cancer therapy is limited as drug delivery vehicles and markers in imaging, not as manipulative/controlling agents. This is due to limited properties that native states of nano silicon and silicon oxides offers. We introduce nano-functionalized multi-phased silicon/silicon oxide biomaterials synthesized via ultrashort pulsed laser synthesis, with tunable properties that possess inherent cancer controlling properties that can passivate the progression of cancer. This nanostructured biomaterial is composed of individual functionalized nanoparticles made of a homogenous hybrid of multiple phases of silicon and silicon oxide in increasing concentration outwards from the core. The chemical properties of the proposed nanostructure such as number of phases, composition of phases and crystal orientation of each functionalized nanoparticle in the three dimensional nanostructure is defined based on precisely tuned ultrashort pulsed laser-material interaction mechanisms. The amorphous rich phased biomaterial shows a 30 fold (95%) reduction in number of cancer cells compared to bulk silicon in 48 hours. Further, the size of the cancer cells reduces by 76% from 24 to 48 hours. This method exposes untapped properties of combination of multiple phases of silicon oxides and its applications in cancer therapy. PMID:26190009

  8. Novel junctionless silicon-oxide-nitride-oxide-silicon memory devices with field-enhanced poly-Si nanowire structure

    NASA Astrophysics Data System (ADS)

    Chou, Chia-Hsin; Chan, Wei-Sheng; Wu, Chun-Yu; Lee, I.-Che; Liao, Ta-Chuan; Wang, Chao-Lung; Wang, Kuang-Yu; Cheng, Huang-Chung

    2015-08-01

    In this work, a novel gate-all-around (GAA) low-temperature poly-Si (LTPS) junctionless (JL) silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory device with a field-enhanced nanowire (NW) structure has been proposed to improve the programing/erasing (P/E) performance. Each nanowire has three sharp corners fabricated by a sidewall spacer formation technique to obtain high local electrical fields. Owing to the higher carrier concentration in the channel and the high local electrical field from the three sharp corners, such a JL SONOS memory device exhibits a significantly enhanced P/E speed, a larger memory window, and better data retention properties than a conventional inversion mode NW-channel memory device.

  9. Oxidation of silicon with a 5 eV O(-) beam

    NASA Technical Reports Server (NTRS)

    Hecht, M. H.; Orient, O. J.; Chutjian, A.; Vasquez, R. P.

    1989-01-01

    A silicon wafer has been oxidized at room temperature in vacuum using a pure, ground-state beam of O(-) ions. The beam was of sufficiently low energy that no displacement damage or implantation was energetically possible. The resulting SiO2 films were analyzed with X-ray photoelectron spectroscopy. A logarithmic dependence of oxide thickness on dose was observed, with an extrapolated oxidation efficiency of unity for the clean silicon surface. A distinct initial oxidation phase was observed, with an anomalously high level of silicon suboxides. In addition, the valence-band offset between the silicon and the oxide was unusually small, suggesting a large interfacial dipole.

  10. Analysis of bi-layer oxide on austenitic stainless steel, 316L, exposed to Lead-Bismuth Eutectic (LBE) by X-ray Photoelectron Spectroscopy (XPS)

    NASA Astrophysics Data System (ADS)

    Koury, D.; Johnson, A. L.; Ho, T.; Farley, J. W.

    2013-09-01

    Corrosion of the austenitic stainless steel alloy 316L by Lead-Bismuth Eutectic (LBE) was studied using X-ray Photoelectron Spectroscopy (XPS) with Sputter-Depth Profiling (SDP), and compared to data taken by Scanning Electron Microscopy (SEM) and Energy Dispersive X-rays (EDXs). Exposed and unexposed samples were compared. Annealed 316L samples, exposed to LBE for durations of 1000, 2000 and 3000 h, developed bi-layer oxides up to 30 μm thick. Analysis of the charge-states of the 2p3/2 peaks of iron, chromium, and nickel in the oxide layers reveal an inner layer consisting of iron and chromium oxides (likely spinel-structured) and an outer layer consisting of iron oxides (Fe3O4). Cold-rolled 316L samples, exposed for the same durations, form a chromium-rich, thin (⩽1 μm) oxide with some oxidized iron in the outermost ˜200 nm of the oxide layer. This is the first experiment to investigate what components of the 316L are oxidized by LBE exposure. It is shown here that nickel is metallic in the inner layer.

  11. Method for removing oxide contamination from silicon carbide powders

    DOEpatents

    Brynestad, J.; Bamberger, C.E.

    1984-08-01

    The described invention is directed to a method for removing oxide contamination in the form of oxygen-containing compounds such as SiO/sub 2/ and B/sub 2/O/sub 3/ from a charge of finely divided silicon carbide. The silicon carbide charge is contacted with a stream of hydrogen fluoride mixed with an inert gas carrier such as argon at a temperature in the range of about 200/sup 0/ to 650/sup 0/C. The oxides in the charge react with the heated hydrogen fluoride to form volatile gaseous fluorides such as SiF/sub 4/ and BF/sub 3/ which pass through the charge along with unreacted hydrogen fluoride and the carrier gas. Any residual gaseous reaction products and hydrogen fluoride remaining in the charge are removed by contacting the charge with the stream of inert gas which also cools the powder to room temperature. The removal of the oxygen contamination by practicing the present method provides silicon carbide powders with desirable pressing and sintering characteristics. 1 tab.

  12. Temperature-dependent minority carrier lifetime of crystalline silicon wafers passivated by high quality amorphous silicon oxide

    NASA Astrophysics Data System (ADS)

    Inaba, Masahiro; Todoroki, Soichiro; Nakada, Kazuyoshi; Miyajima, Shinsuke

    2016-04-01

    We investigated the effects of annealing on the temperature-dependent minority carrier lifetime of a crystalline silicon wafer passivated by hydrogenated amorphous silicon oxide. The annealing significantly affects the lifetime and its temperature dependence. Our device simulations clearly indicate that valence band offset significantly affects the temperature dependence. We also found a slight increase in the interface defect density after annealing.

  13. In situ imaging of the conducting filament in a silicon oxide resistive switch

    PubMed Central

    Yao, Jun; Zhong, Lin; Natelson, Douglas; Tour, James M.

    2012-01-01

    The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of silicon from the silicon oxide matrix. Semi-metallic silicon nanocrystals with structural variations from the conventional diamond cubic form of silicon are observed, which likely accounts for the conduction in the filament. The growth and shrinkage of the silicon nanocrystals in response to different electrical stimuli show energetically viable transition processes in the silicon forms, offering evidence for the switching mechanism. The study here also provides insights into the electrical breakdown process in silicon oxide layers, which are ubiquitous in a host of electronic devices. PMID:22355755

  14. Low reflectance sputtered vanadium oxide thin films on silicon

    NASA Astrophysics Data System (ADS)

    Esther, A. Carmel Mary; Dey, Arjun; Rangappa, Dinesh; Sharma, Anand Kumar

    2016-07-01

    Vanadium oxide thin films on silicon (Si) substrate are grown by pulsed radio frequency (RF) magnetron sputtering technique at RF power in the range of 100-700 W at room temperature. Deposited thin films are characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques to investigate microstructural, phase, electronic structure and oxide state characteristics. The reflectance and transmittance spectra of the films and the Si substrate are recorded at the solar region (200-2300 nm) of the spectral window. Substantial reduction in reflectance and increase in transmittance is observed for the films grown beyond 200 W. Further, optical constants viz. absorption coefficient, refractive index and extinction coefficient of the deposited vanadium oxide films are evaluated.

  15. Thermal oxidation of 3C silicon carbide single-crystal layers on silicon

    NASA Technical Reports Server (NTRS)

    Fung, C. D.; Kopanski, J. J.

    1984-01-01

    Thermal oxidation of thick single-crystal 3C SiC layers on silicon substrates was studied. The oxidations were conducted in a wet O2 atmosphere at temperatures from 1000 to 1250 C for times from 0.1 to 50 h. Ellipsometry was used to determine the thickness and index of refraction of the oxide films. Auger analysis showed them to be homogeneous with near stoichiometric composition. The oxide growth followed a linear parabolic relationship with time. Activation energy of the parabolic rate constant was found to be 50 kcal/mole, while the linear rate constant was 74 kcal/mole. The latter value corresponds approximately to the energy required to break a Si-C bond. Electrical measurements show an effective density of 4-6 x 10 to the 11th per sq cm for fixed oxide charges at the oxide-carbide interface, and the dielectric strength of the oxide film is aproximately 6 x 10 to the 6th V/cm.

  16. Inhibition of inducible nitric oxide synthase in the human intestinal epithelial cell line, DLD-1, by the inducers of heme oxygenase 1, bismuth salts, heme, and nitric oxide donors

    PubMed Central

    Cavicchi, M; Gibbs, L; Whittle, B

    2000-01-01

    BACKGROUND—The inducible isoform of nitric oxide synthase (iNOS) may be involved in the mucosal injury associated with inflammatory bowel disease (IBD). In contrast with iNOS, the inducible heme oxygenase 1 (HO-1) is considered to act as a protective antioxidant system.
AIMS—To evaluate the effects of the known HO-1 inducers, cadmium and bismuth salts, heme, and nitric oxide (NO) donors, on iNOS activity, and expression in the human intestinal epithelial cell line DLD-1.
METHODS—iNOS activity was assessed by the Griess reaction and the radiochemical L-arginine conversion assay. iNOS mRNA and iNOS protein expression were determined by northern and western blotting, respectively.
RESULTS—Cytokine exposure led to induction of iNOS activity, iNOS mRNA, and iNOS protein expression. Preincubation of DLD-1 cells with heme (1-50 µM) inhibited cytokine induced iNOS activity in a concentration dependent manner. This inhibitory effect was abolished by the HO-1 specific inhibitor tin protoporphyrin. Preincubation with NO donors sodium nitroprusside (SNP 1-1000 µM) or S-nitroso-acetyl-penicillamine (SNAP 1-1000 µM), or with the heavy metals cadmium chloride (10-40 µM), bismuth citrate, or ranitidine bismuth citrate (10-3000 µM) inhibited iNOS activity in a concentration dependent manner. Moreover, SNP and heme abolished cytokine induced iNOS protein as well as iNOS mRNA expression, whereas cadmium chloride did not modify iNOS protein expression.
CONCLUSIONS—Heme, the heavy metals cadmium and bismuth, as well as NO donors, are potent inhibitors of cytokine induced iNOS activity. Heme and NO donors act at the transcriptional level inhibiting iNOS mRNA expression. Such findings suggest the potential for interplay between the iNOS and HO-1 systems, which may modulate the progress of IBD.


Keywords: inducible nitric oxide synthase; nitric oxide; colonic epithelial cells; cytokines; heme oxygenase-1; bismuth citrate PMID:11076874

  17. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2001-01-01

    A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  18. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2000-01-01

    A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  19. Effect of hydrogen passivation on the photoluminescence of Tb ions in silicon rich silicon oxide films

    NASA Astrophysics Data System (ADS)

    Zatryb, G.; Klak, M. M.; Wojcik, J.; Misiewicz, J.; Mascher, P.; Podhorodecki, A.

    2015-12-01

    In this work, silicon-rich silicon oxide films containing terbium were prepared by means of plasma enhanced chemical vapor deposition. The influence of hydrogen passivation on defects-mediated non-radiative recombination of excited Tb3+ ions was investigated by photoluminescence, photoluminescence excitation, and photoluminescence decay measurements. Passivation was found to have no effect on shape and spectral position of the excitation spectra. In contrast, a gradual increase in photoluminescence intensity and photoluminescence decay time was observed upon passivation for the main 5D4-7F5 transition of Tb3+ ions. This observation was attributed to passivation of non-radiative recombination defects centers with hydrogen. It was found that the number of emitted photons increases upon passivation as a result of two effects: (1) longer Tb3+ lifetime in the 5D4 excited state and (2) optical activation of new Tb3+ emitters. The obtained results were discussed and compared with other experimental reports.

  20. Oxidation Behavior of Carbon Fiber Reinforced Silicon Carbide Composites

    NASA Technical Reports Server (NTRS)

    Valentin, Victor M.

    1995-01-01

    Carbon fiber reinforced Silicon Carbide (C-SiC) composites offer high strength at high temperatures and good oxidation resistance. However, these composites present some matrix microcracks which allow the path of oxygen to the fiber. The aim of this research was to study the effectiveness of a new Silicon Carbide (SiC) coating developed by DUPONT-LANXIDE to enhance the oxidation resistance of C-SiC composites. A thermogravimetric analysis was used to determine the oxidation rate of the samples at different temperatures and pressures. The Dupont coat proved to be a good protection for the SiC matrix at temperatures lower than 1240 C at low and high pressures. On the other hand, at temperatures above 1340 C the Dupont coat did not seem to give good protection to the composite fiber and matrix. Even though some results of the tests have been discussed, because of time restraints, only a small portion of the desired tests could be completed. Therefore, no major conclusions or results about the effectiveness of the coat are available at this time.

  1. Origin of complex impact craters on native oxide coated silicon surfaces

    SciTech Connect

    Samela, Juha; Nordlund, Kai; Popok, Vladimir N.; Campbell, Eleanor E. B.

    2008-02-15

    Crater structures induced by impact of keV-energy Ar{sub n}{sup +} cluster ions on silicon surfaces are measured with atomic force microscopy. Complex crater structures consisting of a central hillock and outer rim are observed more often on targets covered with a native silicon oxide layer than on targets without the oxide layer. To explain the formation of these complex crater structures, classical molecular dynamics simulations of Ar cluster impacts on oxide coated silicon surfaces, as well as on bulk amorphous silica, amorphous Si, and crystalline Si substrates, are carried out. The diameter of the simulated hillock structures in the silicon oxide layer is in agreement with the experimental results, but the simulations cannot directly explain the height of hillocks and the outer rim structures when the oxide coated silicon substrate is free of defects. However, in simulations of 5 keV/atom Ar{sub 12} cluster impacts, transient displacements of the amorphous silicon or silicon oxide substrate surfaces are induced in an approximately 50 nm wide area surrounding the impact point. In silicon oxide, the transient displacements induce small topographical changes on the surface in the vicinity of the central hillock. The comparison of cluster stopping mechanisms in the various silicon oxide and silicon structures shows that the largest lateral momentum is induced in the silicon oxide layer during the impact; thus, the transient displacements on the surface are stronger than in the other substrates. This can be a reason for the higher frequency of occurrence of the complex craters on oxide coated silicon.

  2. Effect of Graphene Oxide on the Properties of Porous Silicon

    NASA Astrophysics Data System (ADS)

    Olenych, Igor B.; Aksimentyeva, Olena I.; Monastyrskii, Liubomyr S.; Horbenko, Yulia Yu.; Partyka, Maryan V.; Luchechko, Andriy P.; Yarytska, Lidia I.

    2016-02-01

    We studied an effect of the graphene oxide (GO) layer on the optical and electrical properties of porous silicon (PS) in hybrid PS-GO structure created by electrochemical etching of silicon wafer and deposition of GO from water dispersion on PS. With the help of scanning electron microscopy (SEM), atomic-force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy, it was established that GO formed a thin film on the PS surface and is partly embedded in the pores of PS. A comparative analysis of the FTIR spectra for the PS and PS-GO structures confirms the passivation of the PS surface by the GO film. This film has a sufficient transparency for excitation and emission of photoluminescence (PL). Moreover, GO modifies PL spectrum of PS, shifting the PL maximum by 25 nm towards lower energies. GO deposition on the surface of the porous silicon leads to the change in the electrical parameters of PS in AC and DC modes. By means of current-voltage characteristics (CVC) and impedance spectroscopy, it is shown that the impact of GO on electrical characteristics of PS manifests in reduced capacitance and lower internal resistance of hybrid structures.

  3. Effect of Graphene Oxide on the Properties of Porous Silicon.

    PubMed

    Olenych, Igor B; Aksimentyeva, Olena I; Monastyrskii, Liubomyr S; Horbenko, Yulia Yu; Partyka, Maryan V; Luchechko, Andriy P; Yarytska, Lidia I

    2016-12-01

    We studied an effect of the graphene oxide (GO) layer on the optical and electrical properties of porous silicon (PS) in hybrid PS-GO structure created by electrochemical etching of silicon wafer and deposition of GO from water dispersion on PS. With the help of scanning electron microscopy (SEM), atomic-force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy, it was established that GO formed a thin film on the PS surface and is partly embedded in the pores of PS. A comparative analysis of the FTIR spectra for the PS and PS-GO structures confirms the passivation of the PS surface by the GO film. This film has a sufficient transparency for excitation and emission of photoluminescence (PL). Moreover, GO modifies PL spectrum of PS, shifting the PL maximum by 25 nm towards lower energies. GO deposition on the surface of the porous silicon leads to the change in the electrical parameters of PS in AC and DC modes. By means of current-voltage characteristics (CVC) and impedance spectroscopy, it is shown that the impact of GO on electrical characteristics of PS manifests in reduced capacitance and lower internal resistance of hybrid structures. PMID:26831681

  4. Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation

    SciTech Connect

    Ryckman, Judson D.; Reed, Robert A.; Weller, Robert A.; Fleetwood, D. M.; Weiss, S. M.

    2010-12-01

    We report the observation of enhanced oxidation on silicon and porous silicon samples exposed in air ambient to high-dose-rate 10 keV x-ray radiation at room temperature. The evolution of the radiation-induced oxide growth is monitored by ellipsometry and interferometric reflectance spectroscopy. Fourier transform infrared (FTIR) spectroscopy shows the emergence of Si-O-Si stretching modes and corresponding suppression of SiH{sub x} and Si-Si modes in the porous silicon samples. The radiation response depends strongly on initial native oxide thickness and Si-H surface species. The enhanced oxidation mechanism is attributed to photoinduced oxidation processes wherein energetic photons are used to dissociate molecular oxygen and promote the formation of more reactive oxygen species.

  5. Silicon and tungsten oxide nanostructures for water splitting

    NASA Astrophysics Data System (ADS)

    Reyes Gil, Karla R.; Spurgeon, Joshua M.; Lewis, Nathan S.

    2009-08-01

    Inorganic semiconductors are promising materials for driving photoelectrochemical water-splitting reactions. However, there is not a single semiconductor material that can sustain the unassisted splitting of water into H2 and O2. Instead, we are developing a three part cell design where individual catalysts for water reduction and oxidation will be attached to the ends of a membrane. The job of splitting water is therefore divided into separate reduction and oxidation reactions, and each catalyst can be optimized independently for a single reaction. Silicon might be suitable to drive the water reduction. Inexpensive highly ordered Si wire arrays were grown on a single crystal wafer and transferred into a transparent, flexible polymer matrix. In this array, light would be absorbed along the longer axial dimension while the resulting electrons or holes would be collected along the much shorter radial dimension in a massively parallel array resembling carpet fibers on a microscale, hence the term "solar carpet". Tungsten oxide is a good candidate to drive the water oxidation. Self-organized porous tungsten oxide was successfully synthesized on the tungsten foil by anodization. This sponge-like structure absorbs light efficiently due to its high surface area; hence we called it "solar sponge".

  6. Understanding the role of silicon oxide shell in oxide-assisted SiNWs growth

    SciTech Connect

    Wu, Shunqing; Wang, Cai-Zhuang Z; Zhu, Z Z; Ho, Kai-Ming

    2014-12-01

    The role of silicon oxide shell in oxide-assisted SiNWs growth is studied by performing ab initio molecular dynamics simulations on the structural and dynamical properties of the interface between crystalline Si(111) surface and disorder SiO thin film. Si atoms in the SiO film tends to aggregate into the vicinity of the Si(111)/SiO interface. In addition, the diffusion of Si atoms at the interface is anisotropic - the diffusion along the interface is several times faster than that perpendicular to the interface. The segregation and anisotropic diffusion of Si atoms at the Si(111)/SiO interface shed interesting light into the mechanism of oxide-assisted silicon nanowire growth.

  7. Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy

    SciTech Connect

    Vasin, A. V.; Okholin, P. N.; Verovsky, I. N.; Nazarov, A. N.; Lysenko, V. S.; Kholostov, K. I. Bondarenko, V. P.; Ishikawa, Y.

    2011-03-15

    Porous silicon layers were produced by electrochemical etching of single-crystal silicon wafers with the resistivity 10 {Omega} cm in the aqueous-alcohol solution of hydrofluoric acid. Raman spectroscopy and infrared absorption spectroscopy are used to study the processes of interaction of porous silicon with undiluted acetylene at low temperatures and the processes of oxidation of carbonized porous silicon by water vapors. It is established that, even at the temperature 550 Degree-Sign C, the silicon-carbon bonds are formed at the pore surface and the graphite-like carbon condensate emerges. It is shown that the carbon condensate inhibits oxidation of porous silicon by water vapors and contributes to quenching of white photoluminescence in the oxidized carbonized porous silicon nanocomposite layer.

  8. Enhanced photothermal effect of surface oxidized silicon nanocrystals anchored to reduced graphene oxide nanosheets

    NASA Astrophysics Data System (ADS)

    Afshani, Parichehr; Moussa, Sherif; Atkinson, Garrett; Kisurin, Vitaly Y.; Samy El-Shall, M.

    2016-04-01

    We demonstrate the coupling of the photothermal effects of silicon nanocrystals and graphene oxide (GO) dispersed in water. Using laser irradiation (532 nm or 355 nm) of suspended Si nanocrystals in an aqueous solution of GO, the synthesis of surface oxidized Si-reduced GO nanocomposites (SiOx/Si-RGO) is reported. The laser reduction of GO is accompanied by surface oxidation of the Si nanocrystals resulting in the formation of the SiOx/Si-RGO nanocomposites. The SiOx/Si-RGO nanocomposites are proposed as promising materials for photothermal therapy and for the efficient conversion of solar energy into usable heat for a variety of thermal and thermomechanical applications.

  9. Characterization of silicon carbide metal oxide semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Marinella, Matthew J.

    Only a few years after the invention of the transistor, William Shockley considered silicon carbide (SiC) an excellent material for high temperature semiconductor devices. Over a half century later, SiC technology is nearly mature enough that it may be considered for use in commercial electronic devices. Furthermore, since SiC has the ability to grow thermal silicon dioxide, significant research has been directed toward the creation of a commercial SiC metal oxide semiconductor field effect transistor (MOSFET). However, a number of significant hurdles still must be overcome before SiC devices can become commercially competitive, including the relatively high cost and low quality of materials. Another significant problem is the lack of understanding of factors which limit the minority carrier lifetime. The primary purpose of this work was to use the pulsed metal oxide semiconductor capacitor (MOS-C) technique to measure generation lifetime in SiC materials. It was found that many nonidealities corrupt the results obtained by this technique. One very interesting nonideality was negative bias temperature instability (NBTI), which has also been widely studied by the silicon industry in recent years. Methods to understand and minimize the effect of these nonidealities were developed. Furthermore, these methods allowed for further study of the oxide properties, such as leakage current. Even after accounting for nonidealities, generation lifetimes showed several peculiarities, such as a variation of as much as a factor of 1000 within a square cm area. In addition, the ratio of generation to recombination lifetime is less than unity, which is not predicted by classic theory, nor typically observed in silicon devices. Possible explanations are put forth to explain these observations. In addition, to further investigate these abnormalities, Schottky diodes were fabricated and characterized. When applied to the SiC MOS capacitor, the pulsed MOS-C technique involves

  10. Single crystal ternary oxide ferroelectric integration with Silicon

    NASA Astrophysics Data System (ADS)

    Bakaul, Saidur; Serrao, Claudy; Youun, Long; Khan, Asif; Salahuddin, Sayeef

    2015-03-01

    Integrating single crystal, ternary oxide ferroelectric thin film with Silicon or other arbitrary substrates has been a holy grail for the researchers since the inception of microelectronics industry. The key motivation is that adding ferroelectric materials to existing electronic devices could bring into new functionality, physics and performance improvement such as non-volatility of information, negative capacitance effect and lowering sub-threshold swing of field effect transistor (FET) below 60 mV/decade in FET [Salahuddin, S, Datta, S. Nano Lett. 8, 405(2008)]. However, fabrication of single crystal ferroelectric thin film demands stringent conditions such as lattice matched single crystal substrate and high processing temperature which are incompatible with Silicon. Here we report on successful integration of PbZr0.2Ti0.8O3 in single crystal form with by using a layer transfer method. The lattice structure, surface morphology, piezoelectric coefficient d33, dielectric constant, ferroelectric domain switching and spontaneous and remnant polarization of the transferred PZT are as good as these characteristics of the best PZT films grown by pulsed laser deposition on lattice matched oxide substrates. We also demonstrate Si based, FE gate controlled FET devices.

  11. Phonon confinement in Ge nanocrystals in silicon oxide matrix

    NASA Astrophysics Data System (ADS)

    Jie, Yiaxiong; Wee, A. T. S.; Huan, C. H. A.; Shen, Z. X.; Choi, W. K.

    2011-02-01

    Spherical Ge nanocrystals well-dispersed in amorphous silicon oxide matrix have been synthesized with different sizes, and significant size-dependent Raman shift and broadening have been observed. The lattice constant of Ge nanocrystals well-bonded to silicon oxide matrix has been characterized nearly size-independent. With our proposed stress generation and relaxation mechanisms, stress effects in our samples have been analyzed to be insignificant with respect to phonon confinement effects. The phenomenological model introduced by [Richter, Wang, and Ley, Solid State Commun. 39, 625 (1981] with Gaussian weighting function and TO2 phonon dispersion function has been found to give a quite good description of the measured size-dependence of Raman shift and broadening. A 3-peak fitting method has been proposed to determine Ge nanocrystal size and film crystallinity. After physically quantizing quantum-confined one-dimensional elastic waves, we have deduced that each quantum-confined phonon possesses an instantaneous momentum of a given magnitude ℏk with an equal chance of being either positive or negative and momentum conservation is retained in an electron-phonon scattering process. Therefore, on the basis of the first-principle microscopic model and our experimental results, we deduced that Raman scattering in spherical nanocrystals is a concurrent two-phonon process, one phonon generation and one phonon transition.

  12. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

    NASA Astrophysics Data System (ADS)

    Geissbühler, Jonas; Werner, Jérémie; Martin de Nicolas, Silvia; Barraud, Loris; Hessler-Wyser, Aïcha; Despeisse, Matthieu; Nicolay, Sylvain; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan; Ballif, Christophe

    2015-08-01

    Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

  13. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

    SciTech Connect

    Geissbühler, Jonas Werner, Jérémie; Martin de Nicolas, Silvia; Hessler-Wyser, Aïcha; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan; Barraud, Loris; Despeisse, Matthieu; Nicolay, Sylvain; Ballif, Christophe

    2015-08-24

    Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

  14. Oxidation of silicon nanoparticles produced by nanosecond laser ablation in liquids

    NASA Astrophysics Data System (ADS)

    Vaccaro, L.; Camarda, P.; Messina, F.; Buscarino, G.; Agnello, S.; Gelardi, F. M.; Cannas, M.; Boscaino, R.

    2014-10-01

    We investigated nanoparticles produced by laser ablation of silicon in water by the fundamental harmonic (1064 nm) of a ns pulsed Nd:YAG. The silicon oxidation is evidenced by IR absorption features characteristic of amorphous SiO2 (silica). This oxide is highly defective and manifests a luminescence activity under UV excitation: two emission bands at 2.7 eV and 4.4 eV are associated with the twofold coordinated silicon, =SiO••.

  15. Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

    SciTech Connect

    Li, Shaoyuan; Ma, Wenhui; Zhou, Yang; Chen, Xiuhua; Xiao, Yongyin; Ma, Mingyu; Wei, Feng; Yang, Xi

    2014-05-01

    In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO{sub 3} system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO{sub 3} concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWs is significantly reduced when Ag{sup +} ions concentrations are too high. The deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon. - Graphical abstract: Schematic cross-sectional views of PSiNWs array formation by etching oxidized silicon wafer in HF/AgNO{sub 3} solution. (A) At the starting point; (B) during the etching process; and (C) after Ag dendrites remove. - Highlights: • Prior to etching, a simple pre-oxidation is firstly used to treat silicon substrate. • The medially doped p-type MPSiNWs are prepared by one-step MACE. • Deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon are studied. • A model is finally proposed to explain the formation mechanism of PSiNWs.

  16. Solid oxide membrane (SOM) process for ytterbium and silicon production from their oxides

    NASA Astrophysics Data System (ADS)

    Jiang, Yihong

    The Solid oxide membrane (SOM) electrolysis is an innovative green technology that produces technologically important metals directly from their respective oxides. A yttria-stabilized zirconia (YSZ) tube, closed at one end is employed to separate the molten salt containing dissolved metal oxides from the anode inside the YSZ tube. When the applied electric potential between the cathode in the molten salt and the anode exceeds the dissociation potential of the desired metal oxides, oxygen ions in the molten salt migrate through the YSZ membrane and are oxidized at the anode while the dissolved metal cations in the flux are reduced to the desired metal at the cathode. Compared with existing metal production processes, the SOM process has many advantages such as one unit operation, less energy consumption, lower capital costs and zero carbon emission. Successful implementation of the SOM electrolysis process would provide a way to mitigate the negative environmental impact of the metal industry. Successful demonstration of producing ytterbium (Yb) and silicon (Si) directly from their respective oxides utilizing the SOM electrolysis process is presented in this dissertation. During the SOM electrolysis process, Yb2O3 was reduced to Yb metal on an inert cathode. The melting point of the supporting electrolyte (LiF-YbF3-Yb2O3) was determined by differential thermal analysis (DTA). Static stability testing confirmed that the YSZ tube was stable with the flux at operating temperature. Yb metal deposit on the cathode was confirmed by scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS). During the SOM electrolysis process for silicon production, a fluoride based flux based on BaF2, MgF2, and YF3 was engineered to serve as the liquid electrolyte for dissolving silicon dioxide. YSZ tube was used to separate the molten salt from an anode current collector in the liquid silver. Liquid tin was chosen as cathode to dissolve the reduced silicon during

  17. Thermal degradation of ultrabroad bismuth NIR luminescence in bismuth-doped tantalum germanate laser glasses.

    PubMed

    Wang, Liping; Zhao, Yanqi; Xu, Shanhui; Peng, Mingying

    2016-04-01

    Because of ultra-broadband luminescence in 1000-1700 nm and consequent applications in fiber amplifier and lasers in the new spectral range where traditional rare earth cannot work, bismuth-doped laser glasses have received rising interest recently. For long-term practical application, thermal degradation must be considered for the glasses. This, however, has seldom been investigated. Here we report the thermal degradation of bismuth-doped germanate glass. Heating and cooling cycle experiments at high temperature reveal strong dependence of the thermal degradation on glass compositions. Bismuth and tantalum lead to the reversible degradation, while lithium can produce permanent irreversible degradation. The degradation becomes worse as lithium content increases in the glass. Absorption spectra show this is due to partial oxidation of bismuth near-infrared emission center. Surprisingly, we notice the emission of bismuth exhibits blueshift, rather than redshift at a higher temperature, and the blueshift can be suppressed by increasing the lithium content. PMID:27192231

  18. Energetics of bismuth vanadate

    SciTech Connect

    Nagabhushana, G.P.; Tavakoli, A.H.; Navrotsky, A.

    2015-05-15

    Bismuth vanadate has gained considerable interest as a photoanode for water splitting reactions under visible light. It exists in four different polymorphs, out of which three of them have been synthesized. Thermodynamic properties of these three polymorphs are investigated using high temperature oxide melt solution calorimetry. The monoclinic scheelite phase which exhibits photocatalytic activity under visible light is found to be the most stable polymorph, followed by tetragonal scheelite which exhibits activity under UV light. The photocatalytically inactive tetragonal zircon form is found to be the least stable polymorph. The small difference in enthalpy of formation between the two scheelite structures (−8 kJ/mol) is in accord with the reversibility of the transformation between them and the larger difference between the most stable monoclinic phase and the least stable tetragonal zircon phase (−23 kJ/mol) is in accord with the irreversible (monoclinic→tetragonal zircon) phase transformation. - Graphical abstract: Schematic representation of polymorphic transitions in BiVO{sub 4} along with their formation enthalpies. - Highlights: • Bismuth vanadate crystallizes in three different polymorphs. • High temperature calorimetric measurements were made to determine their formation enthalpies. • Enthalpy of formation decreases in the order BV-ms→BV-ts→BV-tz. • Photocatalytically active monoclinic-BiVO{sub 4} was found to be the most stable polymorph.

  19. Characterization of the mechanism of bi-layer oxide growth on austenitic stainless steels 316L and D9 in oxygen-controlled Lead-Bismuth Eutectic (LBE)

    NASA Astrophysics Data System (ADS)

    Koury, Daniel

    Lead Bismuth Eutectic (LBE) has been proposed for use in programs for accelerator-based and reactor-based transmutation of nuclear waste. LBE is a leading candidate material as a spallation target (in accelerator-based transmutation) and an option for the sub-critical blanket coolant. The corrosion by LBE of annealed and cold-rolled 316L stainless steels, and the modified austenitic stainless steel alloy D9, has been studied using Scanning Electron Microscopy (SEM), Electron Probe Micro Analysis (EPMA), and X-ray Photoelectron Spectroscopy (XPS). Exposed and unexposed samples have been compared and the differences studied. Small amounts of surface contamination are present on the samples and have been removed by ion-beam sputtering. The unexposed samples reveal typical stainless steel characteristics: a chromium oxide passivation surface layer and metallic iron and nickel. The exposed samples show protective iron oxide and chromium oxide growths on the surface. Oxygen takes many forms on the exposed samples, including oxides of iron and chromium, carbonates, and organic acids from subsequent handling after exposure to LBE. Different types of surface preparation have lead to considerably different modes of corrosion. The cold-rold samples were resistant to thick oxide growth, having only a thin (< 1 mum), dense chromium-rich oxide. The annealed 316L and D9 samples developed thick, bi-layered oxides, the inner layer consisting of chromium-rich oxides (likely spinel) and the outer layer consisting mostly of iron oxides. The cold-rolled samples were able to maintain a thin chromium oxide layer because of the surface work performed on it, as ample diffusion pathways provided an adequate supply of chromium atoms. The annealed samples grew thick oxides because iron was the primary diffusant, as there are fewer fast-diffusion pathways and therefore an amount of chromium insufficient to maintain a chromium based oxide. Even the thick oxide, however, can prolong the life of

  20. Atomistic modeling of bending properties of oxidized silicon nanowires

    SciTech Connect

    Ilinov, Andrey Kuronen, Antti

    2014-03-14

    In this work, we have modeled a three point bending test of monocrystalline Si nanowires using molecular dynamics simulations in order to investigate their elastic properties. Tested nanowires were about 30 nm in length and had diameters from 5 to 9 nm. To study the influence of a native oxide layer, nanowires were covered with a 1 nm thick silica layer. The bending force was applied by a carbon diamond half-sphere with a 5 nm diameter. The Si-O parametrization for the Tersoff potential was used to describe atomic interactions between Si and O atoms. In order to remove the indentation effect of the diamond half-sphere and to obtain a pure bending behavior, we have also performed a set of simulations with fixed bottoms of the nanowires. Our results show that the oxide layer reduces the nanowire stiffness when compared with a pure Si nanowire with the same number of silicon atoms—in spite of the fact that the oxidized nanowires had larger diameters.

  1. Oxidatively Stable Nanoporous Silicon Photocathodes for Photoelectrochemical Hydrogen Evolution

    SciTech Connect

    Neale, Nathan R.; Zhao, Yixin; Zhu, Kai; Oh, Jihun; van de Lagemaat, Jao; Yuan, Hao-Chih; Branz, Howard M.

    2014-06-02

    Stable and high-performance nanoporous 'black silicon' photoelectrodes with electrolessly deposited Pt nanoparticle (NP) catalysts are made with two metal-assisted etching steps. Doubly etched samples exhibit >20 mA/cm2 photocurrent density at +0.2 V vs. reversible hydrogen electrode (RHE) for photoelectrochemical hydrogen evolution under 1 sun illumination. We find that the photocurrent onset voltage of black Si photocathodes prepared from single-crystal planar Si wafers increases in oxidative environments (e.g., aqueous electrolyte) owing to a positive flat-band potential shift caused by surface oxidation. However, this beneficial oxide layer becomes a kinetic barrier to proton reduction that inhibits hydrogen production after just 24 h. To mitigate this problem, we developed a novel second Pt-assisted etch process that buries the Pt NPs deeper into the nanoporous Si surface. This second etch shifts the onset voltage positively, from +0.25 V to +0.4 V vs. RHE, and reduces the charge-transfer resistance with no performance decrease seen for at least two months.

  2. Formation of hybrid hafnium oxide by applying sacrifacial silicon film

    NASA Astrophysics Data System (ADS)

    Lin, Chiung-Wei; Zheng, Bo-Shen; Huang, Jing-Wei

    2016-01-01

    In the fabrication of hafnium oxide (HfO2)-based metal-insulator-semiconductor (MIS) devices, a sacrificial amorphous silicon (a-Si) film was used as silicon source for facilitating the formation of hafnium silicate (Hf-silicate; HfSiO) between HfO2 and crystallized Si (c-Si). HfSiO can assist in changing the phase of the HfO2 film into the tetragonal phase and achieve high dielectric constant. The combination of HfSiO and HfO2 was named as “Hybrid HfO2”. When this Hybrid HfO2 insulator was applied to MIS devices, it can form a good insulator/semiconductor interface with c-Si. Hybrid HfO2 cannot only suppress the leakage current but also show high dielectric strength. The Hybrid HfO2 film in this work exhibited a high dielectric constant of 25.5 and a high dielectric strength of 17.9 MV/cm.

  3. Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

    NASA Astrophysics Data System (ADS)

    van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

    2016-09-01

    We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

  4. Efficient and sustained photoelectrochemical water oxidation by cobalt oxide/silicon photoanodes with nanotextured interfaces.

    PubMed

    Yang, Jinhui; Walczak, Karl; Anzenberg, Eitan; Toma, Francesca M; Yuan, Guangbi; Beeman, Jeffrey; Schwartzberg, Adam; Lin, Yongjing; Hettick, Mark; Javey, Ali; Ager, Joel W; Yano, Junko; Frei, Heinz; Sharp, Ian D

    2014-04-30

    Plasma-enhanced atomic layer deposition of cobalt oxide onto nanotextured p(+)n-Si devices enables efficient photoelectrochemical water oxidation and effective protection of Si from corrosion at high pH (pH 13.6). A photocurrent density of 17 mA/cm(2) at 1.23 V vs RHE, saturation current density of 30 mA/cm(2), and photovoltage greater than 600 mV were achieved under simulated solar illumination. Sustained photoelectrochemical water oxidation was observed with no detectable degradation after 24 h. Enhanced performance of the nanotextured structure, compared to planar Si, is attributed to a reduced silicon oxide thickness that provides more intimate interfacial contact between the light absorber and catalyst. This work highlights a general approach to improve the performance and stability of Si photoelectrodes by engineering the catalyst/semiconductor interface. PMID:24720554

  5. Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

    SciTech Connect

    Wan, Yimao Bullock, James; Cuevas, Andres

    2015-05-18

    This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta{sub 2}O{sub 5}) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN{sub x}). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta{sub 2}O{sub 5} and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm and n-type 1.0 Ω·cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm{sup 2} and 68 fA/cm{sup 2} are measured on 150 Ω/sq boron-diffused p{sup +} and 120 Ω/sq phosphorus-diffused n{sup +} c-Si, respectively. Capacitance–voltage measurements reveal a negative fixed insulator charge density of −1.8 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5} film and −1.0 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5}/SiN{sub x} stack. The Ta{sub 2}O{sub 5}/SiN{sub x} stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.

  6. Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering

    NASA Astrophysics Data System (ADS)

    Demaurex, Bénédicte; De Wolf, Stefaan; Descoeudres, Antoine; Charles Holman, Zachary; Ballif, Christophe

    2012-10-01

    Damage of the hydrogenated amorphous/crystalline silicon interface passivation during transparent conductive oxide sputtering is reported. This occurs in the fabrication process of silicon heterojunction solar cells. We observe that this damage is at least partially caused by luminescence of the sputter plasma. Following low-temperature annealing, the electronic interface properties are recovered. However, the silicon-hydrogen configuration of the amorphous silicon film is permanently changed, as observed from infra-red absorbance spectra. In silicon heterojunction solar cells, although the as-deposited film's microstructure cannot be restored after sputtering, no significant losses are observed in their open-circuit voltage.

  7. Microbridge testing of plasma-enhanced chemical-vapor deposited silicon oxide films on silicon wafers

    NASA Astrophysics Data System (ADS)

    Cao, Zhiqiang; Zhang, Tong-Yi; Zhang, Xin

    2005-05-01

    Plasma-enhanced chemical-vapor deposited (PECVD) silane-based oxides (SiOx) have been widely used in both microelectronics and microelectromechanical systems (MEMS) to form electrical and/or mechanical components. In this paper, a nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young's modulus of PECVD SiOx films on silicon wafers. Theoretically, we considered both the substrate deformation and residual stress in the thin film and derived a closed formula of deflection versus load. The formula fitted the experimental curves almost perfectly, from which the residual stresses and Young's modulus of the film were determined. Experimentally, freestanding microbridges made of PECVD SiOx films were fabricated using the silicon undercut bulk micromachining technique. Some microbridges were subjected to rapid thermal annealing (RTA) at a temperature of 400 °C, 600 °C, or 800 °C to simulate the thermal process in the device fabrication. The results showed that the as-deposited PECVD SiOx films had a residual stress of -155±17MPa and a Young's modulus of 74.8±3.3GPa. After the RTA, Young's modulus remained relatively unchanged at around 75 GPa, however, significant residual stress hysteresis was found in all the films. A microstructure-based mechanism was then applied to explain the experimental results of the residual stress changes in the PECVD SiOx films after the thermal annealing.

  8. Improved performance of microcrystalline silicon solar cell with graded-band-gap silicon oxide buffer layer

    NASA Astrophysics Data System (ADS)

    Shi, Zhen-Liang; Ji, Yun; Yu, Wei; Yang, Yan-Bin; Cong, Ri-Dong; Chen, Ying-Juan; Li, Xiao-Wei; Fu, Guang-Sheng

    2015-07-01

    Microcrystalline silicon (μc-Si:H) solar cell with graded band gap microcrystalline silicon oxide (μc-SiOx:H) buffer layer is prepared by plasma enhanced chemical vapor deposition and exhibits improved performance compared with the cell without it. The buffer layer moderates the band gap mismatch by reducing the barrier of the p/i interface, which promotes the nucleation of the i-layer and effectively eliminates the incubation layer, and then enhances the collection efficiency of the cell in the short wavelength region of the spectrum. The p/i interface defect density also decreases from 2.2 × 1012 cm-2 to 5.0 × 1011 cm-2. This graded buffer layer allows to simplify the deposition process for the μc-Si:H solar cell application. Project supported by the Key Basic Research Project of Hebei Province, China (Grant Nos. 12963930D and 12963929D), the Natural Science Foundation of Hebei Province, China (Grant Nos. F2013201250 and E2012201059), and the Science and Technology Research Projects of the Education Department of Hebei Province, China (Grant No. ZH2012030).

  9. Energetics of bismuth vanadate

    NASA Astrophysics Data System (ADS)

    Nagabhushana, G. P.; Tavakoli, A. H.; Navrotsky, A.

    2015-05-01

    Bismuth vanadate has gained considerable interest as a photoanode for water splitting reactions under visible light. It exists in four different polymorphs, out of which three of them have been synthesized. Thermodynamic properties of these three polymorphs are investigated using high temperature oxide melt solution calorimetry. The monoclinic scheelite phase which exhibits photocatalytic activity under visible light is found to be the most stable polymorph, followed by tetragonal scheelite which exhibits activity under UV light. The photocatalytically inactive tetragonal zircon form is found to be the least stable polymorph. The small difference in enthalpy of formation between the two scheelite structures (-8 kJ/mol) is in accord with the reversibility of the transformation between them and the larger difference between the most stable monoclinic phase and the least stable tetragonal zircon phase (-23 kJ/mol) is in accord with the irreversible (monoclinic→tetragonal zircon) phase transformation.

  10. Serum protein layers on parylene-C and silicon oxide: Effect on cell adhesion

    PubMed Central

    Delivopoulos, Evangelos; Ouberai, Myriam M.; Coffey, Paul D.; Swann, Marcus J.; Shakesheff, Kevin M.; Welland, Mark E.

    2015-01-01

    Among the range of materials used in bioengineering, parylene-C has been used in combination with silicon oxide and in presence of the serum proteins, in cell patterning. However, the structural properties of adsorbed serum proteins on these substrates still remain elusive. In this study, we use an optical biosensing technique to decipher the properties of fibronectin (Fn) and serum albumin adsorbed on parylene-C and silicon oxide substrates. Our results show the formation of layers with distinct structural and adhesive properties. Thin, dense layers are formed on parylene-C, whereas thicker, more diffuse layers are formed on silicon oxide. These results suggest that Fn acquires a compact structure on parylene-C and a more extended structure on silicon oxide. Nonetheless, parylene-C and silicon oxide substrates coated with Fn host cell populations that exhibit focal adhesion complexes and good cell attachment. Albumin adopts a deformed structure on parylene-C and a globular structure on silicon oxide, and does not support significant cell attachment on either surface. Interestingly, the co-incubation of Fn and albumin at the ratio found in serum, results in the preferential adsorption of albumin on parylene-C and Fn on silicon oxide. This finding is supported by the exclusive formation of focal adhesion complexes in differentiated mouse embryonic stem cells (CGR8), cultured on Fn/albumin coated silicon oxide, but not on parylene-C. The detailed information provided in this study on the distinct properties of layers of serum proteins on substrates such as parylene-C and silicon oxide is highly significant in developing methods for cell patterning. PMID:25555155

  11. Studies on Thermal and Mechanical Properties of Epoxy-Silicon Oxide Hybrid Materials

    NASA Astrophysics Data System (ADS)

    Ghosh, P. K.; Kumar, Kaushal; Kumar, Arun

    2015-11-01

    Ultrasonic dual mixing (UDM) process involving ultrasonic vibration with simultaneous stirring is used to prepare epoxy-silicon oxide hybrid materials with inorganic nanoscale building blocks by incorporating nanoscale silicon oxide network in epoxy matrix. The silicon oxide network is obtained from tetraethoxysilane (TEOS) by using the in situ sol-gel process. Same epoxy-silica hybrid materials were also prepared by mixing with simple impeller stirring, and its properties were compared with the material of same composition prepared by the UDM process. The epoxy-silicon oxide hybrid materials are characterized by using FT-IR, DSC, FESEM, and XRD techniques. The glass transition temperature, tensile strength, and elastic modulus of the epoxy-silicon oxide hybrid materials treated by UDM process are found comparatively better than those of the materials processed by a rotating impeller. FESEM studies confirm that amount of TEOS varies the distribution and size of silicon oxide network, which remains relatively finer at lower content of TEOS. Significant improvement of thermal and mechanical properties of the neat epoxy is noted in the presence of 3.05 wt.% TEOS content in it is giving rise to the formation of inorganic building block of silicon oxide of size 88 ± 45 nm in the matrix. In this regard, the use of UDM process is found superior to mixing by simple impeller stirring for enhancement of properties of epoxy-silicon oxide hybrid materials. Lowering of properties of the epoxy-silicon oxide hybrid materials with TEOS addition beyond 3.05 wt.% up to 6.1 wt.% occurs primarily due to increase of amount and size (up to 170 ± 82 nm) of the inorganic building block in the matrix.

  12. Preparation of silicon@silicon oxide core-shell nanowires from a silica precursor toward a high energy density Li-ion battery anode.

    PubMed

    Zhang, Chuanjian; Gu, Lin; Kaskhedikar, Nitin; Cui, Guanglei; Maier, Joachim

    2013-12-11

    Bulk-quantity silicon@silicon oxide nanowires have been successfully synthesized via a facile high-temperature approach using environment-friendly silica mixed with titanium powders. It is confirmed that the obtained nanowires process a crystalline core and amorphous oxide sheath. The obtained nanowires grow along the [111] direction which catalyzed by spherical silicon@siilcon oxide nanoparticles. The unique one-dimensional structure and thin oxide sheath result in the favorable electrochemical performances, which may be beneficial to the high energy density silicon anode for lithium ion batteries. PMID:24229329

  13. Novel synthetic methodology for controlling the orientation of zinc oxide nanowires grown on silicon oxide substrates.

    PubMed

    Cho, Jinhyun; Salleh, Najah; Blanco, Carlos; Yang, Sungwoo; Lee, Chul-Jin; Kim, Young-Woo; Kim, Jungsang; Liu, Jie

    2014-04-01

    This study presents a simple method to reproducibly obtain well-aligned vertical ZnO nanowire arrays on silicon oxide (SiOx) substrates using seed crystals made from a mixture of ammonium hydroxide (NH4OH) and zinc acetate (Zn(O2CCH3)2) solution. In comparison, high levels of OH(-) concentration obtained using NaOH or KOH solutions lead to incorporation of Na or K atoms into the seed crystals, destroying the c-axis alignment of the seeds and resulting in the growth of misaligned nanowires. The use of NH4OH eliminates the metallic impurities and ensures aligned nanowire growth in a wide range of OH(-) concentrations in the seed solution. The difference of crystalline orientations between NH4OH- and NaOH-based seeds is directly observed by lattice-resolved images and electron diffraction patterns using a transmission electron microscope (TEM). This study obviously suggests that metallic impurities incorporated into the ZnO nanocrystal seeds are one of the factors that generates the misaligned ZnO nanowires. This method also enables the use of silicon oxide substrates for the growth of vertically aligned nanowires, making ZnO nanostructures compatible with widely used silicon fabrication technology. PMID:24584438

  14. Electrical characterization of low-pressure chemical-vapor-deposited silicon dioxide metal-oxide-silicon structures

    NASA Astrophysics Data System (ADS)

    Ang, S. S.; Shi, Y. J.; Brown, W. D.

    1993-03-01

    The electrical characteristics of as-deposited and oxygen-annealed low-pressure chemical-vapor-deposited (LPCVD) silicon dioxide (SiO2) metal-oxide-silicon (MOS) structures were investigated. As-deposited LPCVD SiO2 MOS structures exhibit a high oxide fixed charge density in the mid-1011 cm-2 and an interface state density in the low-1011 cm-2 eV-1 due to the large number of oxygen and silicon dangling bonds. A low electron barrier height in these structures (1.2 eV) is presumed to be due to lowering of the barrier by excess silicon microclusters. Oxygen-annealed LPCVD SiO2 MOS structures exhibit oxide fixed charge and interface state densities in the mid-1010 cm-2 and mid-1010 cm-2 eV-1, respectively. Both the as-deposited and annealed devices exhibit turnaround in flatband voltage shift with avalanche electron injection. However, the direction of shift is opposite for the two devices with the annealed device being very similar to that of thermally grown SiO2 MOS structures. Apparently, oxygen annealing restructures and oxidizes the partial SiOx in the as-deposited LPCVD oxide into stochiometric SiO2. However, the residual nonstochiometric SiO2 microclusters in the bulk result in an electron barrier height of only 2.3 eV.

  15. Photocurrent spectroscopy of Ge nanoclusters grown on oxidized silicon surface

    NASA Astrophysics Data System (ADS)

    Mykytiuk, A. A.; Kondratenko, S. V.; Lysenko, V. S.; Kozyrev, Yu. N.

    2014-05-01

    Germanium (Ge) nanoclusters are grown by a molecular-beam epitaxy technique on chemically oxidized Si(100) surface at 700ºC. Evidence for long-term photoinduced changes of surface conductivity in structures with Ge nanoclusters (NCs) grown on silicon oxide is presented. Photoexcitation NCs or Si by quanta with different energy allows observing two non-equilibrium steady-states with excess and shortage of conductivity values as compare to equilibrium one. The persistent photoconductivity (PPC) behaviour was observed after interband excitation of electron-hole pairs in Si(001) substrate. This effect may be attributed to spatial carrier separation of photoexcited electron-hole pairs by macroscopic fields in the depletion layer of near-surface Si. Photoquenching of surface conductivity, driven by optical recharging of Ge NC's and Si/SiO2 interface states, is observed. Conductivity decay is discussed in the terms of hole`s accumulation by Ge-NC states enhancing the local-potential variations and, therefore, decreasing the surface conductivity of p-Si.

  16. A promising biosensing-platform based on bismuth oxide polycrystalline-modified electrode: characterization and its application in development of amperometric glucose sensor.

    PubMed

    Ding, Shou-Nian; Shan, Dan; Xue, Huai-Guo; Cosnier, Serge

    2010-10-01

    Nano-structured bismuth oxide (nano-BiOx) is a suitable material for enzyme immobilization owing to its attractive properties, such as large specific surface area, suitable permeability of the resulting film, the high biocompatibility, and as well as photovoltaic effect from semiconductor nanoparticles. Thus, a new type of amperometric glucose biosensor based on nano-BiOx was constructed. The amperometric detection of glucose was assayed by potentiostating the GOD/nano-BiOx electrode at 0.5 V to oxidize the enzymatically generated hydrogen peroxide. The proposed biosensor provided a linear response to glucose over a concentration range of 1 x 10(-6) M to 1.5 x 10(-3) M with a sensitivity of 51.0+/-0.4 mA/(M cm(2)) and a detection limit of 4 x 10(-7) M based on S/N=3. The apparent Michaelis-Menten constant was calculated to be 2.9 x 10(-3) M. In addition, characterization of nano-BiOx and modified electrode was performed by FT-IR spectroscopy, Raman spectroscopy, scanning electron microscope (SEM) and rotating-disk electrode (RDE) voltammetry. PMID:20541478

  17. Assessment of the influence of surface finishing and weld joints on the corrosion/oxidation behaviour of stainless steels in lead bismuth eutectic

    NASA Astrophysics Data System (ADS)

    Martín-Muñoz, F. J.; Soler-Crespo, L.; Gómez-Briceño, D.

    2011-09-01

    The objective of this paper is to gain some insight into the influence of the surface finishing in the oxidation/corrosion behaviour of 316L and T91 steels in lead bismuth eutectic (LBE). Specimens of both materials with different surface states were prepared (as-received, grinded, grinded and polished, and electrolitically polished) and oxidation tests were carried out at 775 and 825 K from 100 to 2000 h for two different oxygen concentrations and for H 2/H 2O molar ratios of 3 and 0.03. The general conclusion for these tests is that the effect of surface finishing on the corrosion/protection processes is not significant under the tested conditions. In addition the behaviour of weld joints, T91-T91 Tungsten Inert Gas (TIG) and T91-316L have been also studied under similar conditions. The conclusions are that, whereas T91-T91 welded joint shows the same corrosion properties as the parent materials for the conditions tested, AISI 316L-T91 welded joint, present an important dissolution over seam area that it associated to the electrode 309S used for the fabrication process.

  18. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

    SciTech Connect

    Dargis, Rytis Clark, Andrew; Erdem Arkun, Fevzi; Grinys, Tomas; Tomasiunas, Rolandas; O'Hara, Andy; Demkov, Alexander A.

    2014-07-01

    Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.

  19. High-temperature oxidation behavior of reaction-formed silicon carbide ceramics

    NASA Technical Reports Server (NTRS)

    Ogbuji, Linus U. J. T.; Singh, M.

    1995-01-01

    The oxidation behavior of reaction-formed silicon carbide (RFSC) ceramics was investigated in the temperature range of 1100 to 1400 C. The oxidation weight change was recorded by TGA; the oxidized materials were examined by light and electron microscopy, and the oxidation product by x-ray diffraction analysis (XRD). The materials exhibited initial weight loss, followed by passive weight gain (with enhanced parabolic rates, k(sub p)), and ending with a negative (logarithmic) deviation from the parabolic law. The weight loss arose from the oxidation of residual carbon, and the enhanced k(sub p) values from internal oxidation and the oxidation of residual silicon, while the logarithmic kinetics is thought to have resulted from crystallization of the oxide. The presence of a small amount of MoSi, in the RFSC material caused a further increase in the oxidation rate. The only solid oxidation product for all temperatures studied was silica.

  20. Effect of cold rolling on the oxidation resistance of T91 steel in oxygen-saturated stagnant liquid lead-bismuth eutectic at 450 °C and 550 °C

    NASA Astrophysics Data System (ADS)

    Dong, Hong; Ye, Zhongfei; Wang, Pei; Li, Dianzhong; Zhang, Yutuo; Li, Yiyi

    2016-08-01

    The compatibility of T91 steels having different preparation processes with oxygen-saturated stagnant lead-bismuth eutectic have been investigated at 450 °C and 550 °C. It is found that cold rolling decreases the thickness of the oxide scale of T91 steel by forming a continuous enhanced Cr-rich belt in the inner oxide layer next to the internal oxidation zone, which is attributed to the rapid diffusion of Cr induced by numerous non-equilibrium grain boundaries and migrating dislocations.

  1. Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1979-01-01

    In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. gi The Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.

  2. Silicon nanoprofiling with the use of a solid aluminum oxide mask and combined 'dry' etching

    SciTech Connect

    Belov, A. N.; Demidov, Yu. A.; Putrya, M. G.; Golishnikov, A. A.; Vasilyev, A. A.

    2009-12-15

    Technological features of nanoprofiling of silicon protected by a solid mask based on porous aluminum oxide are considered. It is shown that, for a nanoprofiled silicon surface to be formed, it is advisable that combined dry etching be used including preliminary bombardment of structures with accelerated neutral atoms of an inert gas followed by reactive ion etching.

  3. Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

    SciTech Connect

    Fiorentino, Giuseppe Morana, Bruno; Forte, Salvatore; Sarro, Pasqualina Maria

    2015-01-15

    In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

  4. The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments

    NASA Astrophysics Data System (ADS)

    Rebohle, L.; Berencén, Y.; Wutzler, R.; Braun, M.; Hiller, D.; Ramírez, J. M.; Garrido, B.; Helm, M.; Skorupa, W.

    2014-09-01

    Rare earth doped metal-oxide-semiconductor (MOS) structures are of great interest for Si-based light emission. However, several physical limitations make it difficult to achieve the performance of light emitters based on compound semiconductors. To address this point, in this work the electroluminescence (EL) excitation and quenching mechanism of Er-implanted MOS structures with different designs of the dielectric stack are investigated. The devices usually consist of an injection layer made of SiO2 and an Er-implanted layer made of SiO2, Si-rich SiO2, silicon nitride, or Si-rich silicon nitride. All structures implanted with Er show intense EL around 1540 nm with EL power efficiencies in the order of 2 × 10-3 (for SiO2:Er) or 2 × 10-4 (all other matrices) for lower current densities. The EL is excited by the impact of hot electrons with an excitation cross section in the range of 0.5-1.5 × 10-15 cm-2. Whereas the fraction of potentially excitable Er ions in SiO2 can reach values up to 50%, five times lower values were observed for other matrices. The decrease of the EL decay time for devices with Si-rich SiO2 or Si nitride compared to SiO2 as host matrix implies an increase of the number of defects adding additional non-radiative de-excitation paths for Er3+. For all investigated devices, EL quenching cross sections in the 10-20 cm2 range and charge-to-breakdown values in the range of 1-10 C cm-2 were measured. For the present design with a SiO2 acceleration layer, thickness reduction and the use of different host matrices did not improve the EL power efficiency or the operation lifetime, but strongly lowered the operation voltage needed to achieve intense EL.

  5. Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

    NASA Astrophysics Data System (ADS)

    Li, Shaoyuan; Ma, Wenhui; Zhou, Yang; Chen, Xiuhua; Xiao, Yongyin; Ma, Mingyu; Wei, Feng; Yang, Xi

    2014-05-01

    In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO3 system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO3 concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWs is significantly reduced when Ag+ ions concentrations are too high. The deposition behaviors of Ag+ ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon.

  6. Nano crystalline Bi2(VO5) phases in lithium bismuth borate glasses containing mixed vanadium-nickel oxides

    NASA Astrophysics Data System (ADS)

    Yadav, Arti; Khasa, S.; Dahiya, M. S.; Agarwal, A.

    2016-05-01

    Glass composition 7V2O5.23Li2O.20Bi2O3.50B2O3 and x(2NiO.V2O5).(30-x)Li2O.20Bi2O3.50B2O3, x=0, 2, 5, 7 and 10, were produced by conventional melt quenching technique. The quenched amorphous glass samples were annealed at temperatures 400°C and 500°C for 6 hours. The Bi2(VO5) crystallite were grown in all prepared glass matrix. Tn vanadium lithium bismuth borate glass (annealed), the some phrase of V2O5-crystal were observed along with the nano crystalline Bi2(VO5) phase. The sharp peaks in FTTR spectra of all annealed compositions were also compatible with the XRD diffraction peaks of the system under investigation. Average crystalline size (D) of the Bi2(VO5) nano-crystallite was ~30nm for samples annealed at 400°C and ~42nm for samples annealed at 500°C. Lattice parameter and the lattice strain for all the samples was also calculated corresponding to the (113) plane of Bi2(VO5) crystallite.

  7. Microstructure, toughness and flexural strength of self-reinforced silicon nitride ceramics doped with yttrium oxide and ytterbium oxide.

    PubMed

    Zheng, Y. S.; Knowles, K. M.; Vieira, J. M.; Lopes, A. B.; Oliveira, F. J.

    2001-02-01

    Self-reinforced silicon nitride ceramics with additions of either yttrium oxide or ytterbium oxide have been investigated at room temperature after various processing heat treatments. Devitrification of the intergranular phase in these materials is very sensitive to the heat treatment used during processing and does not necessarily improve their strength and toughness. Hot-pressed ceramics without a subsequent devitrification heat treatment were the strongest. The ytterbium oxide-doped silicon nitride ceramics were consistently tougher, but less strong, than the yttrium oxide-doped silicon nitride ceramics. In all the ceramics examined, the fracture toughness showed evidence for R-curve behaviour. This was most significant in pressureless sintered ytterbium oxide-doped silicon nitride ceramics. A number of toughening mechanisms, including crack deflection, bridging, and fibre-like grain pull-out, were observed during microstructural analysis of the ceramics. In common with other silicon nitride-based ceramics, thin amorphous films were found at the grain boundaries in each of the ceramics examined. Arrays of dislocations left in the elongated silicon nitride grains after processing were found to belong to the {101;0}<0001> primary slip system. PMID:11207926

  8. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, Ken

    1994-01-01

    An iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100.degree. C.

  9. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, K.

    1992-01-01

    This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

  10. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, K.

    1994-12-27

    An iron-based alloy is described containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100 C. 8 figures.

  11. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  12. Synchrotron x-ray reflectivity study of oxidation/passivation of copper and silicon.

    SciTech Connect

    Chu, Y.; Nagy, Z.; Parkhutik, V.; You, H.

    1999-07-21

    Synchrotron x-ray-scattering technique studies of copper and silicon electrochemical interfaces are reported. These two examples illustrate the application of synchrotron x-ray techniques for oxidation, passivation, and dissolution of metals and semiconductors.

  13. Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Cuony, P.; Marending, M.; Alexander, D. T. L.; Boccard, M.; Bugnon, G.; Despeisse, M.; Ballif, C.

    2010-11-01

    Lower absorption, lower refractive index, and tunable resistance are three advantages of amorphous silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to microcrystalline silicon (μc-Si), when used as a p-type layer in μc-Si thin-film solar cells. We show that p-nc-SiOx with its particular nanostructure increases μc-Si cell efficiency by reducing reflection and parasitic absorption losses depending on the roughness of the front electrode. Furthermore, we demonstrate that the p-nc-SiOx reduces the detrimental effects of the roughness on the electrical characteristics, and significantly increases μc-Si and Micromorph cell efficiency on substrates until now considered too rough for thin-film silicon solar cells.

  14. Thromboresistance Characterization of Extruded Nitric Oxide-Releasing Silicone Catheters

    PubMed Central

    Amoako, Kagya A.; Archangeli, Christopher; Handa, Hitesh; Major, Terry; Meyerhoff, Mark E.; Annich, Gail M.; Bartlett, Robert H.

    2013-01-01

    Intravascular catheters used in clinical practice can activate platelets, leading to thrombus formation and stagnation of blood flow. Nitric oxide (NO)-releasing polymers have been shown previously to reduce clot formation on a number of blood contacting devices. In this work, trilaminar NO-releasing silicone catheters were fabricated and tested for their thrombogenicity. All catheters had specifications of L = 6 cm, inner diameter = 21 gauge (0.0723 cm), outer diameter = 12 gauge (0.2052 cm), and NO-releasing layer thickness = 200 ± 11 μm. Control and NO-releasing catheters were characterized in vitro for their NO flux and NO release duration by gas phase chemiluminescence measurements. The catheters were then implanted in the right and left internal jugular veins of (N = 6 and average weight = 3 kg) adult male rabbits for 4 hours thrombogenicity testing. Platelet counts and function, methemoglobin (metHb), hemoglobin (Hb), and white cell counts and functional time (defined as patency time of catheter) were monitored as measured outcomes. Nitric oxide-releasing catheters (N = 6) maintained an average flux above (2 ± 0.5) × 10−10 mol/min/cm2 for more than 24 hours, whereas controls showed no NO release. Methemoglobin, Hb, white cell, and platelet counts and platelet function at 4 hours were not significantly different from baseline (α = 0.05). However, clots on controls were visibly larger and prevented blood draws at a significantly (p < 0.05) earlier time (2.3 ± 0.7 hours) into the experiment, whereas all NO-releasing catheters survived the entire 4 hours test period. Results indicate that catheter NO flux levels attenuated thrombus formation in a short-term animal model. PMID:22395119

  15. Alternative method for steam generation for thermal oxidation of silicon

    NASA Astrophysics Data System (ADS)

    Spiegelman, Jeffrey J.

    2010-02-01

    Thermal oxidation of silicon is an important process step in MEMS device fabrication. Thicker oxide layers are often used as structural components and can take days or weeks to grow, causing high gas costs, maintenance issues, and a process bottleneck. Pyrolytic steam, which is generated from hydrogen and oxygen combustion, was the default process, but has serious drawbacks: cost, safety, particles, permitting, reduced growth rate, rapid hydrogen consumption, component breakdown and limited steam flow rates. Results from data collected over a 24 month period by a MEMS manufacturer supports replacement of pyrolytic torches with RASIRC Steamer technology to reduce process cycle time and enable expansion previously limited by local hydrogen permitting. Data was gathered to determine whether Steamers can meet or exceed pyrolytic torch performance. The RASIRC Steamer uses de-ionized water as its steam source, eliminating dependence on hydrogen and oxygen. A non-porous hydrophilic membrane selectively allows water vapor to pass. All other molecules are greatly restricted, so contaminants in water such as dissolved gases, ions, total organic compounds (TOC), particles, and metals can be removed in the steam phase. The MEMS manufacturer improved growth rate by 7% over the growth range from 1μm to 3.5μm. Over a four month period, wafer uniformity, refractive index, wafer stress, and etch rate were tracked with no significant difference found. The elimination of hydrogen generated a four-month return on investment (ROI). Mean time between failure (MTBF) was increased from 3 weeks to 32 weeks based on three Steamers operating over eight months.

  16. Resistive Switching and Memory effects in Silicon Oxide Based Nanostructures

    NASA Astrophysics Data System (ADS)

    Yao, Jun

    Silicon oxide (SiOx 1 < x ≦2) has long been used and considered as a passive and insulating component in the construction of electronic devices. In contrast, here the active role of SiOx in constructing a type of resistive switching memory is studied. From electrode-independent electrical behaviors to the visualization of the conducting filament inside the SiOx matrix, the intrinsic switching picture in SiOx is gradually revealed. The thesis starts with the introduction of some similar phenomenological switching behaviors in different electronic structures (Chapter 1), and then generalizes the electrode-material-independent electrical behaviors on SiOx substrates, providing indirect evidence to the intrinsic SiOx switching (Chapter 2). From planar nanogap systems to vertical sandwiched structures, Chapter 3 further discusses the switching behaviors and properties in SiOx. By localization of the switching site, the conducting filament in SiOx is visualized under transmission electron microscope using both static and in situ imaging methods (Chapter 4). With the intrinsic conduction and switching in SiO x largely revealed, Chapter 5 discusses its impact and implications to the molecular electronics and nanoelectronics where SiOx is constantly used. As comparison, another type of memory effect in semiconductors (carbon nanotubes) based on charge trapping at the semiconductor/SiO x interface is discussed (Chapter 6).

  17. Crystalline Silicon/Graphene Oxide Hybrid Junction Solar Cells

    NASA Astrophysics Data System (ADS)

    Liu, Qiming; Wanatabe, Fumiya; Hoshino, Aya; Ishikawa, Ryo; Gotou, Takuya; Ueno, Keiji; Shirai, Hajime

    2012-10-01

    Soluble graphene oxide (GO) and plasma-reduced (pr-) GO were investigated using crystalline silicon (c-Si) (100)/GO/pr-GO hybrid junction solar cells. Their photovoltaic performances were compared with those of c-Si/GO/pristine conductive poly(ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) heterojunction and c-Si/PEDOT:PSS:GO composite devices. The c-Si/GO/pr-GO and conductive PEDOT:PSS/Al heterojunction solar cells showed power conversion efficiencies of 6.5 and 8.2%, respectively, under illumination with AM 1.5 G 100 mW/cm2 simulated solar light. A higher performance of 10.7% was achieved using the PEDOT:PSS:GO (12.5 wt %) composite device. These findings imply that soluble GO, pr-GO, and the PEDOT:PSS:GO composite are promising materials as hole transport and transparent conductive layers for c-Si/organic hybrid junction solar cells.

  18. Electrical characterization of hydrogenated amorphous silicon oxide films

    NASA Astrophysics Data System (ADS)

    Itoh, Takashi; Katayama, Ryuichi; Yamakawa, Koki; Matsui, Kento; Saito, Masaru; Sugiyama, Shuhichiroh; Sichanugrist, Porponth; Nonomura, Shuichi; Konagai, Makoto

    2015-08-01

    The electrical characterization of hydrogenated amorphous silicon oxide (a-SiOx:H) films was performed by electron spin resonance (ESR) and electrical conductivity measurements. In the ESR spectra of the a-SiOx:H films, two ESR peaks with g-values of 2.005 and 2.013 were observed. The ESR peak with the g-value of 2.013 was not observed in the ESR spectra of a-Si:H films. The photoconductivity of the a-SiOx:H films decreased with increasing spin density estimated from the ESR peak with the g-value of 2.005. On the other hand, photoconductivity was independent of spin density estimated from the ESR peak with the g-value of 2.013. The optical absorption coefficient spectra of the a-SiOx:H films were also measured. The spin density estimated from the ESR peak with the g-value of 2.005 increased proportionally with increasing optical absorption owing to the gap-state defect.

  19. Silicon oxide permeation barrier coating of PET bottles and foils

    NASA Astrophysics Data System (ADS)

    Steves, Simon; Deilmann, Michael; Awakowicz, Peter

    2009-10-01

    Modern packaging materials such as polyethylene terephthalate (PET) have displaced established materials in many areas of food and beverage packaging. Plastic packing materials offer are various advantages concerning production and handling. PET bottles for instance are non-breakable and lightweight compared to glass and metal containers. However, PET offers poor barrier properties against gas permeation. Therefore, the shelf live of packaged food is reduced. Permeation of gases can be reduced by depositing transparent plasma polymerized silicon oxide (SiOx) barrier coatings. A microwave (2.45 GHz) driven low pressure plasma reactor is developed based on a modified Plasmaline antenna to treat PET foils or bottles. To increase the barrier properties of the coatings furthermore a RF substrate bias (13.56 MHz) is applied. The composition of the coatings is analyzed by means of Fourier transform infrared (FTIR) spectroscopy regarding carbon and hydrogen content. Influence of gas phase composition and substrate bias on chemical composition of the coatings is discussed. A strong relation between barrier properties and film composition is found: good oxygen barriers are observed as carbon content is reduced and films become quartz-like. Regarding oxygen permeation a barrier improvement factor (BIF) of 70 is achieved.

  20. Degenerate epitaxy-driven defects in monolayer silicon oxide on ruthenium

    NASA Astrophysics Data System (ADS)

    Mathur, Shashank; Vlaic, Sergio; Machado-Charry, Eduardo; Vu, Anh-Duc; Guisset, Valérie; David, Philippe; Hadji, Emmanuel; Pochet, Pascal; Coraux, Johann

    2015-10-01

    The structure of the ultimately thin crystalline allotrope of silicon oxide, prepared on a ruthenium surface, is unveiled down to the atomic scale with chemical sensitivity, owing to high resolution scanning tunneling microscopy and first principles calculations. An ordered oxygen lattice is imaged which coexists with the two-dimensional monolayer oxide. This coexistence signals a displacive transformation from an oxygen-reconstructed Ru(0001) to silicon oxide, along which laterally shifted domains form, each with equivalent and degenerate epitaxial relationships with the substrate. The unavoidable character of defects at the boundaries between these domains appeals for the development of alternative methods capable of producing single-crystalline two-dimensional oxides.

  1. Correlation between density and oxidation temperature for pyrolytic-gas passivated ultrathin silicon oxide films

    NASA Astrophysics Data System (ADS)

    Yamada, Hiroshi

    2004-01-01

    Pyrolytic-gas passivation (PGP) with a small amount nitrogen gas enhances the breakdown reliability of silicon oxide gate films. To clarify the reliability retention of the PGP-grown films oxidized at low temperature, densities (ρox's) of the 3.5-6.5-nm-thick PGP-grown films on Si(100) oxidized at 700-900 °C were investigated. Since ρox's correlate well with the reliability and are useful as an index of the intrinsic structural characteristics of the films. Moreover, changes in ρox and nitrogen content corresponding to oxidation temperature are similar to those in breakdown reliability and interface state density (Dit), respectively. In addition, ρox's of the 700 °C-grown PGP films do not deteriorate as much when compared with those of the films grown by normal ultradry oxidation at 800 °C and their Dit's are less than about 6×1010/eV cm2. This suggests that PGP probably improves the reliability by generating the higher-ρox microscopic structure with few Si dangling bonds and effective passivation. .

  2. Atomic layer deposition of bismuth oxide using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O

    SciTech Connect

    Austin, Dustin Z. Conley, John F.; Allman, Derryl; Price, David; Hose, Sallie; Saly, Mark

    2014-01-15

    Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O at deposition temperatures between 90 and 270 °C on Si{sub 3}N{sub 4}, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi{sub 2}O{sub 3} films deposited at 150 °C have a linear growth per cycle of 0.039 nm/cycle, density of 8.3 g/cm{sup 3}, band gap of approximately 2.9 eV, low carbon content, and show the β phase structure with a (201) preferred crystal orientation. Deposition temperatures above 210 °C and postdeposition anneals caused uneven volumetric expansion, resulting in a decrease in film density, increased interfacial roughness, and degraded optical properties.

  3. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  4. Bismuth-doped germanosilicate fibre laser with 20-W output power at 1460 nm

    SciTech Connect

    Firstov, Sergei V; Shubin, Aleksei V; Khopin, V F; Mel'kumov, Mikhail A; Bufetov, Igor' A; Medvedkov, O I; Gur'yanov, Aleksei N; Dianov, Evgenii M

    2011-07-31

    We report the first cw bismuth - germanium codoped silica fibre laser with an output power above 20 W at 1460 nm and 50% optical efficiency. The laser operates on a transition between energy levels of bismuth-related active centres associated with silicon. The incorporation of a small amount ({approx}5 mol %) of germanium into the core of bismuth-doped silica fibre has little effect on its luminescence spectrum but reduces optical losses, which limit the laser efficiency. (letters)

  5. In situ transmission infrared spectroscopy of high-kappa oxide atomic layer deposition onto silicon surfaces

    NASA Astrophysics Data System (ADS)

    Ho, Ming-Tsung

    Ultra-thin aluminum oxide (Al2O3) and hafnium oxide (HfO2) layers have been grown by atomic layer deposition (ALD) using tri-methyl-aluminum (TMA) and tetrakis-ethyl-methyl-amino-hafnium (TEMAH) respectively with heavy water (D2O) as the oxidizing agent. Several different silicon surfaces were used as substrates such as hydrogen terminated silicon (H/Si), SC2 (or RCA 2) cleaned native silicon oxide (SiO 2/Si), and silicon (oxy)nitride. In-situ transmission Fourier transform infrared spectroscopy (FTIR) has been adopted for the study of the growth mechanisms during ALD of these films. The vibrational spectra of gas phase TEMAH and its reaction byproducts with oxidants have also been investigated. Density functional theory (DFT) normal mode calculations show a good agreement with the experimental data when it is combined with linear wave-number scaling method and Fermi resonance mechanism. Ether (-C-O-C-) and tertiary alkylamine (N(R1R 2R3)) compounds are the two most dominant products of TEMAH reacting with oxygen gas and water. When ozone is used as the oxidant, gas phase CH2O, CH3NO2, CH3-N=C=O and other compounds containing -(C=O)- and --C-O-C- (or --O-C-) segments are observed. With substrate temperatures less than 400°C and 300°C for TMA and TEMAH respectively, Al oxide and Hf oxide ALD can be appropriately performed on silicon surfaces. Thin silicon (oxy)nitride thermally grown in ammonia on silicon substrate can significantly reduce silicon oxide interlayer formation during ALD and post-deposition annealing. The crystallization temperature of amorphous ALD grown HfO2 on nitridized silicon is 600°C, which is 100°C higher than on the other silicon surfaces. When HfO2 is grown on H/Si(111) at 100°C deposition temperature, minimum 5--10 ALD cycles are required for the full surface coverage. The steric effect can be seen by the evolution of the H-Si stretching mode at 2083 cm-1. The observed red shift of H-Si stretching to ˜ 2060 cm-1 can be caused by Si

  6. Ethylene oxide-block-butylene oxide copolymer uptake by silicone hydrogel contact lens materials

    NASA Astrophysics Data System (ADS)

    Huo, Yuchen; Ketelson, Howard; Perry, Scott S.

    2013-05-01

    Four major types of silicone hydrogel contact lens material have been investigated following treatments in aqueous solutions containing poly(ethylene oxide) and poly(butylenes oxide) block copolymer (EO-BO). The extent of lens surface modification by EO-BO and the degree of bulk uptake were studied using X-ray photoelectron spectroscopy (XPS) and ultra-performance liquid chromatography (UPLC), respectively. The experimental results suggest that different interaction models exist for the lenses, highlighting the influence of both surface and bulk composition, which greatly differs between the lenses examined. Specifically, lenses with hydrophilic surface treatments, i.e., PureVision® (balafilcon A) and O2OPTIX (lotrafilcon B), demonstrated strong evidence of preferential surface adsorption within the near-surface region. In comparison, surface adsorption on ACUVUE® Oasys® (senofilcon A) and Biofinity® (comfilcon A) was limited. As for bulk absorption, the amount of EO-BO uptake was the greatest for balafilcon A and comfilcon A, and least for lotrafilcon B. These findings confirm the presence of molecular concentration gradients within the silicone hydrogel lenses following exposure to EO-BO solutions, with the nature of such concentration gradients found to be lens-specific. Together, the results suggest opportunities for compositional modifications of lenses for improved performance via solution treatments containing surface-active agents.

  7. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    NASA Astrophysics Data System (ADS)

    Torres Sevilla, G. A.; Almuslem, A. S.; Gumus, A.; Hussain, A. M.; Cruz, M. E.; Hussain, M. M.

    2016-02-01

    Thinned silicon based complementary metal oxide semiconductor (CMOS) electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOS inverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible silicon CMOS inverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  8. Critical issues of complex, epitaxial oxide growth and integration with silicon by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lettieri, James

    Molecular beam epitaxy was used to grow epitaxial oxides on silicon substrates. The growth of BaO, SrO, EuO, and SrTiO3 are discussed with a focus on the general theme of integration of functional, epitaxial oxides into a silicon environment. Oxidation studies of various metal systems relevant for oxide on silicon epitaxy and integration are reported. Results demonstrate the catalytic nature of an alkaline earth metal at small concentrations to enable the oxidation of the poorly oxidizing metals at pressures lower than during deposition of the pure metal alone. Results from the deposition of various elements are presented. The aspects of the growth of alkaline earth oxides on silicon are explained. The transition from the silicon to the alkaline earth oxide as described through reflection high energy electron diffraction (RHEED) is presented and used to understand issues related to each stage of the growth. High quality, commensurate alkaline earth oxides are grown on silicon at room temperature and P O2 background ˜ 3 x 10-8 Torr. The growth of alkaline earth and rare earth oxide solid solutions and rare earth oxides (EuO) are described. The first reported epitaxial EuO on silicon is reported, enabled by the use of a thin buffer layer (13 A) of SrO. Using a strategy of transition from simple structures to the more complex, the growth of a perovskite (SrTiO3) on silicon is demonstrated. Growth of a structurally optimized perovskite structure entails the transformation of a thin interfacial alkaline earth oxide layer into the initial perovskite cells. SrTiO3 and La-doped SrTiO3 on silicon are used to integrate a piezoelectric relevant for microelectromechanical systems (MEMS) applications and a ferroelectric relevant for a ferroelectric random access memory (FRAM) architecture. A d33 value of over 400 pm/V under bias is measured for the piezoelectric (Pb(Mn1/3Nb 2/3)O3 -PbTiO3) and a remanent polarization of 25 muC/cm2 and fatigue free behavior (>1012 cycles) for a

  9. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NASA Astrophysics Data System (ADS)

    van Hattum, E. D.

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology, where the SiOx layer is used as the charge retention layer on the drums for copying and printing devices. The thesis describes investigations of the plasma and of processes taking place on the sputter target and on the SiOx growth surface in the room temperature, RF reactive magnetron plasma sputter deposition technology. The sputtering target consists of silicon and the reactive atmosphere consists of an Ar/O2 mixture. The composition of the grown SiOx layers has been varied between x=0 and x=2 by variation of the O2 partial pressure. The characteristics of the growth process have been related to the nanostructural properties of the grown films. The deposition system enables the characterisation of the plasma (Langmuir probe, energy resolved mass spectrometer) and of the growing film (Elastic Recoil Detection (ERD), Fourier transform infrared absorption spectroscopy) and is connected to a beamline of a 6MV tandem van de Graaff accelerator. Also Rutherford Backscattering Spectrometry and X-ray Photoelectron Spectroscopy have been applied. It is shown how ERD can be used as a real-time in-situ technique. The thesis presents spatially resolved values of the ion density, electron temperature and the quasi-electrostatic potential, determined using a Langmuir probe. The plasma potential has a maximum about 2 cm from the cathode erosion area, and decreases (more than 200 V typically) towards the floating sputter cathode. The potential decreases slightly in the direction towards the grounded growth surface and the positive, mainly Ar+, ions created in the large volume of the plasma closest to the substrate are accelerated towards the growth surface. These ions obtain a few eV of

  10. Gas-phase formation of silicon carbides, oxides, and sulphides from atomic silicon ions

    NASA Technical Reports Server (NTRS)

    Bohme, Diethard K.; Wlodek, Stanislaw; Fox, Arnold

    1989-01-01

    A systematic experimental study of the kinetics and mechanisms of the chemical reactions in the gas phase between ground-state Si(+)2p and a variety of astrophysical molecules. The aim of this study is to identify the reactions which trigger the formation of chemical bonds between silicon and carbon, oxygen and sulphur, and the chemical pathways which lead to further molecular growth. Such knowledge is valuable in the identification of new extraterrestrial silicon-bearing molecules and for an assessment of the gas-phase transition from atomic silicon to silicon carbide and silicate grain particles in carbon-rich and oxygen-rich astrophysical environments.

  11. Method for one-to-one polishing of silicon nitride and silicon oxide

    NASA Technical Reports Server (NTRS)

    Babu, Suryadevara V. (Inventor); Natarajan, Anita (Inventor)

    2009-01-01

    The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

  12. Electrical characterization of rapid thermal nitrided and re-oxidized low-pressure chemical-vapor-deposited silicon dioxide metal-oxide-silicon structures

    NASA Astrophysics Data System (ADS)

    Ang, S. S.; Shi, Y. J.; Brown, W. D.

    1996-02-01

    The electrical characteristics of rapid thermal nitrided and re-oxidized low-pressure chemical-vapor-deposited (LPCVD) silicon dioxide metal-oxide-silicon (MOS) structures were investigated. Both nitridation temperature and time affect the properties of the MOS structures as revealed by capacitance-voltage characteristics. Nitridation at 1000 °C for 15 s followed by re-oxidation for 60 s at 1000 °C in an oxygen/nitrogen ambient was found to be superior to the same nitridation for 60 s with no re-oxidation. Typical values of fixed charge and interface state densities for devices subjected to nitridation and re-oxidation in a mixture of oxygen and nitrogen were 4×1010 cm-2 and 7×1010 eV-1 cm-2, respectively. Avalanche electron injection using electric fields of 3-3.5 MV/cm produced positive shifts in flatband voltage for devices nitrided at 1000 °C for 15 s followed by re-oxidation, whereas samples nitrided at 1000 °C for 60 s without the re-oxidation yielded negative shifts in flatband voltage. An electron barrier height of 2.4 eV was found for these nitrided samples. These results strongly suggest that device quality MOS dielectrics for high-voltage power MOS field-effect-transistors can be realized by nitridation/re-oxidation of LPCVD oxide.

  13. Comparison of Structural and Optoelectronic Properties of N-Type Microcrystalline Silicon and Silicon Oxide Films with Lowering of Thickness

    NASA Astrophysics Data System (ADS)

    Banerjee, Chandan; Sarker, Arindam; Barua, Asok K.

    2002-08-01

    We have compared the structural and optoelectronic properties of n-type microcrystalline hydrogenated silicon oxide (n-μc-SiO:H) and n-type microcrystalline hydrogenated silicon (n-μc-Si:H) films with lowering of thickness, prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD, 13.56 MHz) method. At thickness ≤ 300 Å, the n-μc-SiO:H film has higher optical gap (E05) and lower optical absorption while retaining the photoconductivity (σph) and activation energy (Ea) similar to those for n-μc-Si:H film. Due to these advantages of n-μc-SiO:H film over that of n-μc-Si:H at low thickness this material has potential for use in improving the performance of single and double junction amorphous silicon solar cells.

  14. The complex interface chemistry of thin-film silicon/zinc oxide solar cell structures.

    PubMed

    Gerlach, D; Wimmer, M; Wilks, R G; Félix, R; Kronast, F; Ruske, F; Bär, M

    2014-12-21

    The interface between solid-phase crystallized phosphorous-doped polycrystalline silicon (poly-Si(n(+))) and aluminum-doped zinc oxide (ZnO:Al) was investigated using spatially resolved photoelectron emission microscopy. We find the accumulation of aluminum in the proximity of the interface. Based on a detailed photoemission line analysis, we also suggest the formation of an interface species. Silicon suboxide and/or dehydrated hemimorphite have been identified as likely candidates. For each scenario a detailed chemical reaction pathway is suggested. The chemical instability of the poly-Si(n(+))/ZnO:Al interface is explained by the fact that SiO2 is more stable than ZnO and/or that H2 is released from the initially deposited a-Si:H during the crystallization process. As a result, Zn (a deep acceptor in silicon) is "liberated" close to the silicon/zinc oxide interface presenting the inherent risk of forming deep defects in the silicon absorber. These could act as recombination centers and thus limit the performance of silicon/zinc oxide based solar cells. Based on this insight some recommendations with respect to solar cell design, material selection, and process parameters are given for further knowledge-based thin-film silicon device optimization. PMID:25363298

  15. Improvement of plasmonic enhancement of quantum dot emission via an intermediate silicon-aluminum oxide interface

    SciTech Connect

    Wing, Waylin J.; Sadeghi, Seyed M. Campbell, Quinn

    2015-01-05

    We studied the emission of quantum dots in the presence of plasmon-metal oxide substrates, which consist of arrays of metallic nanorods embedded in amorphous silicon coated with a nanometer-thin layer of aluminum oxide on the top. We showed that the combined effects of plasmons and the silicon-aluminum oxide interface can lead to significant enhancement of the quantum efficiency of quantum dots. Our results show that such an interface can significantly enhance plasmonic effects of the nanorods via quantum dot-induced exciton-plasmon coupling, leading to partial polarization of the quantum dots' emission.

  16. Evaluation of transition metal oxide as carrier-selective contacts for silicon heterojunction solar cells

    SciTech Connect

    Ding, L.; Boccard, Matthieu; Holman, Zachary; Bertoni, M.

    2015-04-06

    "Reducing light absorption in the non-active solar cell layers, while enabling the extraction of the photogenerated minority carriers at quasi-Fermi levels are two key factors to improve current generation and voltage, and therefore efficiency of silicon heterojunction solar devices. To address these two critical aspects, transition metal oxide materials have been proposed as alternative to the n- and p-type amorphous silicon used as electron and hole selective contacts, respectively. Indeed, transition metal oxides such as molybdenum oxide, titanium oxide, nickel oxide or tungsten oxide combine a wide band gap typically over 3 eV with a band structure and theoretical band alignment with silicon that results in high transparency to the solar spectrum and in selectivity for the transport of only one carrier type. Improving carrier extraction or injection using transition metal oxide has been a topic of investigation in the field of organic solar cells and organic LEDs; from these pioneering works a lot of knowledge has been gained on materials properties, ways to control these during synthesis and deposition, and their impact on device performance. Recently, the transfer of some of this knowledge to silicon solar cells and the successful application of some metal oxide to contact heterojunction devices have gained much attention. In this contribution, we investigate the suitability of various transition metal oxide films (molybdenum oxide, titanium oxide, and tungsten oxide) deposited either by thermal evaporation or sputtering as transparent hole or electron selective transport layer for silicon solar cells. In addition to systematically characterize their optical and structural properties, we use photoemission spectroscopy to relate compound stoichiometry to band structure and characterize band alignment to silicon. The direct silicon/metal oxide interface is further analyzed by quasi-steady state photoconductance decay method to assess the quality of surface

  17. Study of charge control and gate tunneling in a ferroelectric-oxide-silicon field effect transistor: Comparison with a conventional metal-oxide-silicon structure

    NASA Astrophysics Data System (ADS)

    Lin, Yih-Yin; Zhang, Yifei; Singh, Jasprit; York, Robert; Mishra, Umesh

    2001-02-01

    It is known that conventional metal-oxide-silicon (MOS) devices will have gate tunneling related problems at very thin oxide thicknesses. Various high-dielectric-constant materials are being examined to suppress the gate currents. In this article we present theoretical results of a charge control and gate tunneling model for a ferroelectric-oxide-silicon field effect transistor and compare them to results for a conventional MOS device. The potential of high polarization charge to induce inversion without doping and high dielectric constant to suppress tunneling current is explored. The model is based on a self-consistent solution of the quantum problem and includes the ferroelectric hysteresis response self-consistently. We show that the polarization charge associated with ferroelectrics can allow greater controllability of the inversion layer charge density. Also the high dielectric constant of ferroelectrics results in greatly suppressed gate current.

  18. Rapid thermal chemical vapor deposition of thin silicon oxide films using silane and nitrous oxide

    NASA Astrophysics Data System (ADS)

    Xu, X. L.; Kuehn, R. T.; Wortman, J. J.; Öztürk, M. C.

    1992-06-01

    Thin (80-200 Å) silicon dioxide (SiO2) films have been deposited by low pressure rapid thermal chemical vapor deposition (RTCVD), using silane (SiH4) and nitrous oxide (N2O) as the reactive gases for the first time. A deposition rate of 55 Å/min has been achieved at 800 °C with a SiH4/N2O flow rate ratio of 2%. Auger electron spectroscopy (AES) and Rutherford back scattering spectroscopy (RBS) have shown a uniform and stoichiometric composition throughout the deposited oxide films. Electrical characterization of the films have shown an average catastrophic breakdown field of 13 MV/cm and a midgap interface trap density (Dit) of equal to or less than 5×1010 eV-1 cm-2. The results suggest that the deposited RTCVD SiO2 films using SiH4-N2O gas system may have the potential to be used as the gate dielectric in future low-temperature metal oxide semiconductor (MOS) device processes for ultralarge scale integration (ULSI).

  19. Crack healing behavior of hot pressed silicon nitride due to oxidation

    NASA Technical Reports Server (NTRS)

    Choi, S. R.; Tikare, V.

    1992-01-01

    It is shown that limited oxidation of an MgO-containing, hot-pressed silicon nitride ceramic at 800 deg C and above results in increased strength due to crack healing. Slight oxidation of the surface produces enstatite and cristobalite which fills in cracks. More extensive oxidation leads to strength degradation due to the formation of new flaws by the evolution of N2 gas at the surface. The apparent fracture toughness also increased at 800 deg C and above due to oxidation. Bonds formed between the two surfaces of the crack during oxidation leads to a reduction in stress intensity at the crack tip, suggesting that valid high-temperature toughness values cannot be obtained in an air environment. The increase in strength due to crack healing by oxidation can be achieved without compromising the fatigue properties of the silicon nitride ceramic.

  20. Rapid Covalent Modification of Silicon Oxide Surfaces through Microwave-Assisted Reactions with Alcohols.

    PubMed

    Lee, Austin W H; Gates, Byron D

    2016-07-26

    We demonstrate the method of a rapid covalent modification of silicon oxide surfaces with alcohol-containing compounds with assistance by microwave reactions. Alcohol-containing compounds are prevalent reagents in the laboratory, which are also relatively easy to handle because of their stability against exposure to atmospheric moisture. The condensation of these alcohols with the surfaces of silicon oxides is often hindered by slow reaction kinetics. Microwave radiation effectively accelerates this condensation reaction by heating the substrates and/or solvents. A variety of substrates were modified in this demonstration, such as silicon oxide films of various thicknesses, glass substrates such as microscope slides (soda lime), and quartz. The monolayers prepared through this strategy demonstrated the successful formation of covalent surface modifications of silicon oxides with water contact angles of up to 110° and typical hysteresis values of 2° or less. An evaluation of the hydrolytic stability of these monolayers demonstrated their excellent stability under acidic conditions. The techniques introduced in this article were successfully applied to tune the surface chemistry of silicon oxides to achieve hydrophobic, oleophobic, and/or charged surfaces. PMID:27396288

  1. Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation

    SciTech Connect

    Lee, J.-G.; Nagase, T.; Yasuda, H.; Mori, H.

    2015-05-21

    The synthesis of metal silicide at the metal/silicon oxide interface by electronic excitation was investigated using transmission electron microscopy. A platinum silicide, α-Pt{sub 2}Si, was successfully formed at the platinum/silicon oxide interface under 25–200 keV electron irradiation. This is of interest since any platinum silicide was not formed at the platinum/silicon oxide interface by simple thermal annealing under no-electron-irradiation conditions. From the electron energy dependence of the cross section for the initiation of the silicide formation, it is clarified that the silicide formation under electron irradiation was not due to a knock-on atom-displacement process, but a process induced by electronic excitation. It is suggested that a mechanism related to the Knotek and Feibelman mechanism may play an important role in silicide formation within the solid. Similar silicide formation was also observed at the palladium/silicon oxide and nickel/silicon oxide interfaces, indicating a wide generality of the silicide formation by electronic excitation.

  2. Optimization of contaminated oxide inversion layer solar cell. [considering silicon oxide coating

    NASA Technical Reports Server (NTRS)

    Call, R. L.

    1976-01-01

    Contaminated oxide cells have been fabricated with efficiencies of 8.6% with values of I sub sc = 120 ma, V sub oc = .54 volts, and curve factor of .73. Attempts to optimize the fabrication step to yield a higher output have not been successful. The fundamental limitation is the inadequate antireflection coating afforded by the silicon dioxide coating used to hold the contaminating ions. Coatings of SiO, therefore, were used to obtain a good antireflection coating, but the thinness of the coatings prevented a large concentration of the contaminating ions, and the cells was weak. Data of the best cell were .52 volts V sub oc, 110 ma I sub sc, .66 CFF and 6.7% efficiency.

  3. Surface-Assisted Laser Desorption Ionization of Low Molecular Organic Substances on Oxidized Porous Silicon

    NASA Astrophysics Data System (ADS)

    Shmigol, I. V.; Alekseev, S. A.; Lavrynenko, O. Yu.; Zaitsev, V. N.; Barbier, D.; Pokrovskiy, V. A.

    Desorption/ionization on silicon (DIOS) mass spectra of methylene blue (MB+Cl-) were studied using p+-type oxidized monofunctional porous silicon (PS-OX mono ) free layers. Reduction/protonation processes of methylene blue (MB) dye were investigated. It was shown that SiH x terminal sites on oxidized surface of porous silicon (PS-OX) are not the rate-determining factor for the reduction/protonation in DIOS. Tunneling of electron through the dielectric layer of nanostructures on silicon surface under effect of local electrostatic and electromagnetic fields is considered to be the most significant factor of adsorbate-adsorbent electron exchange and further laser-induced ion formation.

  4. Hybrid Integration of Graphene Analog and Silicon Complementary Metal-Oxide-Semiconductor Digital Circuits.

    PubMed

    Hong, Seul Ki; Kim, Choong Sun; Hwang, Wan Sik; Cho, Byung Jin

    2016-07-26

    We demonstrate a hybrid integration of a graphene-based analog circuit and a silicon-based digital circuit in order to exploit the strengths of both graphene and silicon devices. This mixed signal circuit integration was achieved using a three-dimensional (3-D) integration technique where a graphene FET multimode phase shifter is fabricated on top of a silicon complementary metal-oxide-semiconductor field-effect transistor (CMOS FET) ring oscillator. The process integration scheme presented here is compatible with the conventional silicon CMOS process, and thus the graphene circuit can successfully be integrated on current semiconductor technology platforms for various applications. This 3-D integration technique allows us to take advantage of graphene's excellent inherent properties and the maturity of current silicon CMOS technology for future electronics. PMID:27403730

  5. Graphene-Assisted Chemical Etching of Silicon Using Anodic Aluminum Oxides as Patterning Templates.

    PubMed

    Kim, Jungkil; Lee, Dae Hun; Kim, Ju Hwan; Choi, Suk-Ho

    2015-11-01

    We first report graphene-assisted chemical etching (GaCE) of silicon by using patterned graphene as an etching catalyst. Chemical-vapor-deposition-grown graphene transferred on a silicon substrate is patterned to a mesh with nanohole arrays by oxygen plasma etching using an anodic- aluminum-oxide etching mask. The prepared graphene mesh/silicon is immersed in a mixture solution of hydrofluoric acid and hydro peroxide with various molecular fractions at optimized temperatures. The silicon underneath graphene mesh is then selectively etched to form aligned nanopillar arrays. The morphology of the nanostructured silicon can be controlled to be smooth or porous depending on the etching conditions. The experimental results are systematically discussed based on possible mechanisms for GaCE of Si. PMID:26473800

  6. Corrosion resistant three-dimensional nanotextured silicon for water photo-oxidation

    NASA Astrophysics Data System (ADS)

    Carter, Rachel; Chatterjee, Shahana; Gordon, Evan; Share, Keith; Erwin, William R.; Cohn, Adam P.; Bardhan, Rizia; Pint, Cary L.

    2015-10-01

    We demonstrate the ability to chemically transform bulk silicon into a nanotextured surface that exhibits excellent electrochemical stability in aqueous conditions for water photo-oxidation. Conformal defective graphene coatings on nanotextured silicon formed by thermal treatment enable over 50× corrosion resistance in aqueous electrolytes based upon Tafel analysis and impedance spectroscopy. This enables nanotextured silicon as an effective oxygen-evolution photoanode for water splitting with saturation current density measured near 35 mA cm-2 under 100 mW cm-2 (1 sun) illumination. Our approach builds upon simple and scalable processing techniques with silicon to develop corrosion resistant electrodes that can benefit a broad range of catalytic and photocatalytic applications.We demonstrate the ability to chemically transform bulk silicon into a nanotextured surface that exhibits excellent electrochemical stability in aqueous conditions for water photo-oxidation. Conformal defective graphene coatings on nanotextured silicon formed by thermal treatment enable over 50× corrosion resistance in aqueous electrolytes based upon Tafel analysis and impedance spectroscopy. This enables nanotextured silicon as an effective oxygen-evolution photoanode for water splitting with saturation current density measured near 35 mA cm-2 under 100 mW cm-2 (1 sun) illumination. Our approach builds upon simple and scalable processing techniques with silicon to develop corrosion resistant electrodes that can benefit a broad range of catalytic and photocatalytic applications. Electronic supplementary information (ESI) available: (i) Experimental details, (ii) Nyquist plot from EIS data, (iii) FTIR of H-terminated silicon, (iv) reflectance measurements to quantify light trapping in nanotextured silicon, (v) LSV from Tafel analysis, and (vi) J-V curves for H-terminated flat samples, (vii) stability test of photoanode, and (viii) forward and reverse scans for each sample type. See DOI: 10

  7. Effective surface passivation of p-type crystalline silicon with silicon oxides formed by light-induced anodisation

    NASA Astrophysics Data System (ADS)

    Cui, Jie; Grant, Nicholas; Lennon, Alison

    2014-12-01

    Electronic surface passivation of p-type crystalline silicon by anodic silicon dioxide (SiO2) was investigated. The anodic SiO2 was grown by light-induced anodisation (LIA) in diluted sulphuric acid at room temperature, a process that is significantly less-expensive than thermal oxidation which is widely-used in silicon solar cell fabrication. After annealing in oxygen and then forming gas at 400 °C for 30 min, the effective minority carrier lifetime of 3-5 Ω cm, boron-doped Czochralski silicon wafers with a phosphorus-doped 80 Ω/□ emitter and a LIA anodic SiO2 formed on the p-type surface was increased by two orders of magnitude to 150 μs. Capacitance-voltage measurements demonstrated a very low positive charge density of 3.4 × 1011 cm-2 and a moderate density of interface states of 6 × 1011 eV-1 cm-2. This corresponded to a silicon surface recombination velocity of 62 cm s-1, which is comparable with values reported for other anodic SiO2 films, which required higher temperatures and longer growth times, and significantly lower than oxides grown by chemical vapour deposition techniques. Additionally, a very low leakage current density of 3.5 × 10-10 and 1.6 × 10-9 A cm-2 at 1 and -1 V, respectively, was measured for LIA SiO2 suggesting its potential application as insulation layer in IBC solar cells and a barrier for potential induced degradation.

  8. Dispersion engineering of high-Q silicon microresonators via thermal oxidation

    SciTech Connect

    Jiang, Wei C.; Zhang, Jidong; Usechak, Nicholas G.; Lin, Qiang

    2014-07-21

    We propose and demonstrate a convenient and sensitive technique for precise engineering of group-velocity dispersion in high-Q silicon microresonators. By accurately controlling the surface-oxidation thickness of silicon microdisk resonators, we are able to precisely manage the zero-dispersion wavelength, while simultaneously further improving the high optical quality of our devices, with the optical Q close to a million. The demonstrated dispersion management allows us to achieve parametric generation with precisely engineerable emission wavelengths, which shows great potential for application in integrated silicon nonlinear and quantum photonics.

  9. The effect of nanocrystalline silicon host on magnetic properties of encapsulated iron oxide nanoparticles.

    PubMed

    Granitzer, P; Rumpf, K; Gonzalez-Rodriguez, R; Coffer, J L; Reissner, M

    2015-12-21

    The purpose of this work is a detailed comparison of the fundamental magnetic properties of nanocomposite systems consisting of Fe3O4 nanoparticle-loaded porous silicon as well as silicon nanotubes. Such composite structures are of potential merit in the area of magnetically guided drug delivery. For magnetic systems to be utilized in biomedical applications, there are certain magnetic properties that must be fulfilled. Therefore magnetic properties of embedded Fe3O4-nanoparticles in these nanostructured silicon host matrices, porous silicon and silicon nanotubes, are investigated. Temperature-dependent magnetic investigations have been carried out for four types of iron oxide particle sizes (4, 5, 8 and 10 nm). The silicon host, in interplay with the iron oxide nanoparticle size, plays a sensitive role. It is shown that Fe3O4 loaded porous silicon and SiNTs differ significantly in their magnetic behavior, especially the transition between superparamagnetic behavior and blocked state, due to host morphology-dependent magnetic interactions. Importantly, it is found that all investigated samples meet the magnetic precondition of possible biomedical applications of exhibiting a negligible magnetic remanence at room temperature. PMID:26575478

  10. Analyses of silicon dioxide, magnesium oxide, lead fluoride, bismuth as low-pass velocity filters for neutrons

    NASA Technical Reports Server (NTRS)

    Connor, D.; Holmryd, S.

    1969-01-01

    Transmission measurement of neutrons by filter materials for low energy neutrons is important for the study of structure and dynamics of condensed matter. Since only thermal neutrons are useful for such experiments, filter materials that transmit thermal neutrons while attenuating fast neutrons and gamma rays are of considerable interest.