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Sample records for bpw34 commercial p-i-n

  1. A low cost X-ray imaging device based on BPW-34 Si-PIN photodiode

    NASA Astrophysics Data System (ADS)

    Emirhan, E.; Bayrak, A.; Yücel, E. Barlas; Yücel, M.; Ozben, C. S.

    2016-05-01

    A low cost X-ray imaging device based on BPW-34 silicon PIN photodiode was designed and produced. X-rays were produced from a CEI OX/70-P dental tube using a custom made ±30 kV power supply. A charge sensitive preamplifier and a shaping amplifier were built for the amplification of small signals produced by photons in the depletion layer of Si-PIN photodiode. A two dimensional position control unit was used for moving the detector in small steps to measure the intensity of X-rays absorbed in the object to be imaged. An Aessent AES220B FPGA module was used for transferring the image data to a computer via USB. Images of various samples were obtained with acceptable image quality despite of the low cost of the device.

  2. Photocapacitance study at p-i-n photodiode by numerical C- V integration

    NASA Astrophysics Data System (ADS)

    Kavasoglu, A. Sertap; Kavasoglu, Nese; Oktik, Sener

    2009-02-01

    This paper describes a different numerical approach to estimate the impurity profile in a typical p-i-n device by using measured capacitance-voltage ( C- V) characteristics. The constructed numerical model has been found to provide an impurity profile which is almost consistent with those reported in the literature. Until now, no study of the anomalous capacitance response of the silicon p-i-n device induced by the space charge effects due to photo-generated carriers has been reported. In this study, we unveiled this anomalous behaviour through illuminated C- V characteristics. The illuminated C- V result of BPW34 exhibits capacitance oscillations. This behaviour could be augmented by the density of states discontinuities in intrinsic silicon [Biswajit Das. Observation of capacitance-voltage oscillations in porous silicon. Physica E: Low-dimens Syst Nanostruct 2004;23(1-2):141-46].

  3. Semiconductor P-I-N detector

    SciTech Connect

    Sudharsanan, Rengarajan; Karam, Nasser H.

    2001-01-01

    A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

  4. Photovoltaic response of a polymer p-i-n junction

    NASA Astrophysics Data System (ADS)

    Zhang, Yanguang; Hu, Yufeng; Gao, Jun

    2007-12-01

    We report the photovoltaic characterization of a polymer p-i-n junction, realized by in situ electrochemical doping and thermal cycling. The planar, "frozen" p-i-n junction exhibits record-high open-circuit voltage up to 2.25V, and in-plane short-circuit current density in excess of 10mA /cm2 under simulated sunlight (˜300mW/cm2). Our results suggest that built-in potential close to the polymer energy gap in magnitude can be obtained in a polymer device structure without the use of dissimilar electrodes, and large short-circuit current density is possible without the use of strong electron acceptors, which limits the open-circuit voltage.

  5. Continuous Holdup Measurements with Silicon P-I-N Photodiodes

    SciTech Connect

    Bell, Z.W.; Oberer, R.B.; Williams, J.A.; Smith, D.E.; Paulus, M.J.

    2002-05-01

    We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact. Although the small size of the diodes means they are not nearly as efficient as scintillation detectors, the diodes' size does mean that a detector module, including one or more diodes, pulse shaping electronics, analog-to-digital converter, embedded microprocessor, and digital interface can be realized in a package (excluding shielding) the size of a pocket calculator. This small size, coupled with only low-voltage power requirement, completely solid-state realization, and internal control functions allows these detectors to be strategically deployed on a permanent basis, thereby reducing or eliminating the need for manual holdup measurements. In this paper, we report on the measurement of gamma and X rays from {sup 235}U and {sup 238}U contained in steel pipe. We describe the features of the spectra, the electronics of the device and show how a network of them may be used to improve estimates of inventory in holdup.

  6. Improved charge collection of the buried p-i-n a-Si:H radiation detectors

    SciTech Connect

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Street, R.A.; Xerox Palo Alto Research Center, CA )

    1989-09-01

    Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV {alpha} particles, the 5.7 {mu}m thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs.

  7. Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts

    NASA Astrophysics Data System (ADS)

    Chen, Changxin; Liao, Chenghao; Wei, Liangming; Zhong, Hanqing; He, Rong; Liu, Qinran; Liu, Xiaodong; Lai, Yunfeng; Song, Chuanjuan; Jin, Tiening; Zhang, Yafei

    2016-02-01

    A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied the effect of the contact on the device characteristics. It was shown that a low reverse saturation current of ~20 pA could be achieved by these both diodes. We found that the use of the asymmetric contact can effectively improve the performance of the p-i-n diode, with the rectification ratio enhanced from ~102 for the device with the Au/Au symmetric contact to >103 for the one with the Pd/Al asymmetric contact. The improvement of the device performance by the asymmetric-contact structure was attributed to the decrease of the effective Schottky-barrier height at the contacts under forward bias, increasing the forward current of the diode. The p-i-n diode with asymmetric contact also had a higher rectification ratio than its counterpart before doping the SWCNT channel, which is because that the p-i-n junction in the device decreased the reverse saturated current.

  8. Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts

    PubMed Central

    Chen, Changxin; Liao, Chenghao; Wei, Liangming; Zhong, Hanqing; He, Rong; Liu, Qinran; Liu, Xiaodong; Lai, Yunfeng; Song, Chuanjuan; Jin, Tiening; Zhang, Yafei

    2016-01-01

    A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied the effect of the contact on the device characteristics. It was shown that a low reverse saturation current of ~20 pA could be achieved by these both diodes. We found that the use of the asymmetric contact can effectively improve the performance of the p-i-n diode, with the rectification ratio enhanced from ~102 for the device with the Au/Au symmetric contact to >103 for the one with the Pd/Al asymmetric contact. The improvement of the device performance by the asymmetric-contact structure was attributed to the decrease of the effective Schottky-barrier height at the contacts under forward bias, increasing the forward current of the diode. The p-i-n diode with asymmetric contact also had a higher rectification ratio than its counterpart before doping the SWCNT channel, which is because that the p-i-n junction in the device decreased the reverse saturated current. PMID:26915400

  9. Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts.

    PubMed

    Chen, Changxin; Liao, Chenghao; Wei, Liangming; Zhong, Hanqing; He, Rong; Liu, Qinran; Liu, Xiaodong; Lai, Yunfeng; Song, Chuanjuan; Jin, Tiening; Zhang, Yafei

    2016-01-01

    A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied the effect of the contact on the device characteristics. It was shown that a low reverse saturation current of ~20 pA could be achieved by these both diodes. We found that the use of the asymmetric contact can effectively improve the performance of the p-i-n diode, with the rectification ratio enhanced from ~10(2) for the device with the Au/Au symmetric contact to >10(3) for the one with the Pd/Al asymmetric contact. The improvement of the device performance by the asymmetric-contact structure was attributed to the decrease of the effective Schottky-barrier height at the contacts under forward bias, increasing the forward current of the diode. The p-i-n diode with asymmetric contact also had a higher rectification ratio than its counterpart before doping the SWCNT channel, which is because that the p-i-n junction in the device decreased the reverse saturated current. PMID:26915400

  10. Energy conversion process of p-i-n amorphous Si solar cells

    NASA Astrophysics Data System (ADS)

    Kuwano, Y.; Tsuda, S.; Ohnishi, M.

    1982-02-01

    The photovoltaic conversion process of a p-i-n amorphous silicon (a-Si) solar cell is investigated, and its theoretical limit efficiency is calculated. Under AM-1 illumination, the theoretical limit efficiency of the p-i-n a-Si solar cell is estimated to be 12.5%, while that under fluorescent lamp illumination is estimated to be 25.9%. In the calculation of the charge distribution in a-Si film, the Shifted U distribution is proposed for the distribution function of gap states. Poisson's equation is directly solved as a boundary condition problem, and the output characteristics of the p-i-n a-Si solar cell are calculated by solving the continuity equation for the photo-generated carriers.

  11. Diode p-i-n-STRUCTURES Based on Neutron Doped Si1-xGex-ALLOYS

    NASA Astrophysics Data System (ADS)

    Chekanov, V.; Yevseyev, V.; Kuryatkov, V.; Prokofyeva, T.

    Photoelectric properties of neutron transmutation doped (NTD) Si1-xGex solid solutions (alloy) with variable composition are presented. It is shown that the application of NTD method to Si1-xGex solid solutions with gradient composition (x = 0-2 at.%) along an ingot allows to receive p-i-n-structures with typical diode characteristics. We studied electrical and photoelectrical properties of that structure. Deep level transient spectroscopy of p-i-n diode has revealed the energy levels in the forbidden zone of Si1-xGex, connected with transmutation Se impurity. It is established that p-i-n-structures possess high spectral sensitivity with a maximum at hν = 1.2-1.5 eV (300 K). Possible application of Si1-xGex-alloys in development of uncooled photodiodes with large effective area was considered.

  12. Optoelectronic properties of p-i-n heterojunctions based on germanium nanocrystals

    NASA Astrophysics Data System (ADS)

    Parola, S.; Quesnel, E.; Muffato, V.; Xie, L.; Leifer, K.; Coignus, J.; Slaoui, A.

    2013-07-01

    We investigated the possibility of using physical vapour deposited Ge nanocrystals (NCs) in optoelectronic devices such as solar cells. We have prepared p-i-n heterojunctions based on p+-doped Si substrate/undoped Ge NCs/ZnO:Al layer stacks and their optoelectronic properties were characterised. Under light, the generation of photo-carriers from the Ge NCs themselves was demonstrated. The photovoltaic behaviour of the p-i-n structure was also highlighted, with a measured Voc of 224 mV compared to 580 mV in theory. The discrepancy between theory and experiment was discussed on the basis of TEM observations, optical and carrier generation measurements as well as modelling.

  13. Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon

    NASA Astrophysics Data System (ADS)

    Nakaharai, Shu; Iijima, Tomohiko; Ogawa, Shinichi; Miyazaki, Hisao; Li, Songlin; Tsukagoshi, Kazuhito; Sato, Shintaro; Yokoyama, Naoki

    2012-01-01

    A graphene P-I-N junction switching device with a nanoribbon is proposed, which was aimed at finding an optimized operation scheme for graphene transistors. The device has two bulk graphene regions where the carrier type is electrostatically controlled by a top gate, and these two regions are separated by a nanoribbon that works as an insulator, resulting in a junction configuration of (P or N)-I-(P or N). It is demonstrated that the drain current modulation strongly depends on the junction configuration, while the nanoribbon is not directly top-gated, and that the device with a P-I-N or N-I-P junction can exhibit better switching properties.

  14. Carrier trapping and escape times in p-i-n GaInNAs MQW structures

    PubMed Central

    2014-01-01

    We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structures, in terms of charge accumulation and resonance tunnelling. PMID:24417767

  15. A p-i-n junction diode based on locally doped carbon nanotube network

    PubMed Central

    Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

    2016-01-01

    A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm. PMID:26996610

  16. Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon

    NASA Astrophysics Data System (ADS)

    Nakaharai, Shu; Iijima, Tomohiko; Ogawa, Shinichi; Miyazaki, Hisao; Li, Songlin; Tsukagoshi, Kazuhito; Sato, Shintaro; Yokoyama, Naoki

    2012-02-01

    The concept of a novel graphene P-I-N junction switching device with a nanoribbon is proposed, and its basic operation is demonstrated in an experiment. The concept aims to optimize the operation scheme for graphene transistors toward a superior on-off property. The device has two bulk graphene regions where the carrier type is electrostatically controlled by a top-gate, and these two regions are separated by a nanoribbon which works as insulator. As a result, the device forms a (P or N)-I-(P or N) junction. The off state is obtained by lifting the band of the bulk graphene of the source side and lowering that of the drain side, so that the device forms a P-I-N junction. In this configuration, the leakage current is reduced more effectively than the conventional single gate transistors due to a high barrier height and a long tunneling length in the nanoribbon. The on state is obtained by flipping the polarity of the bias of either top-gate to form a P-I-P or N-I-N junction. An experiment showed that the drain current was suppressed in the cases of P-I-N and N-I-P compared to P-I-P and N-I-N, and all of the behaviors were consistent with what was expected from the device operation model. This research is granted by JSPS through FIRST Program initiated by CSTP.

  17. A p-i-n junction diode based on locally doped carbon nanotube network

    NASA Astrophysics Data System (ADS)

    Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

    2016-03-01

    A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm.

  18. Amorphous silicon p-i-n photodetector with Frisch grid for high-speed medical imaging

    NASA Astrophysics Data System (ADS)

    Allec, Nicholas; Goldan, Amir H.; Wang, Kai; Chen, Feng; Karim, Karim S.

    2010-04-01

    In indirect digital x-ray detectors, photodetectors such as hydrogenated amorphous silicon (a-Si:H) p-i-n photodetectors are used to convert the optical photons generated by the scintillating material to collectible electron-hole pairs. A problem that arises during the collection of the charges is that the mobility and lifetime of both types of carriers (electrons and holes) differ. In a-Si:H, the mobility of holes is much lower than that of electrons which leads to depth-dependent signal variations and causes the charge collection time to be extensive. It has been shown that the use of a Frisch grid can reduce the effect of the slower carriers in direct x-ray detectors. The Frisch grid is essentially a conducting grid that shields carriers from the collecting electrode until they are in close proximity. When the pixel electrodes are properly biased, the grid prevents the slow moving carriers (traveling away from the collecting electrode) from being collected and puts more weight on the fast moving carriers, thus allowing the total charge to be collected in less time. In this paper we investigate the use of a Frisch grid in a-Si:H p-i-n photodetectors for indirect x-ray detectors. Through simulations and theoretical analysis we determine the grid line sizes and positioning that will be most effective for practical p-i-n photodetector designs. In addition we compare the results of photodetectors with and without the grid to characterize the improvement achievable.

  19. Improved designs for p-i-n OLEDs towards the minimal power loss of devices

    NASA Astrophysics Data System (ADS)

    Qin, Dashan

    2014-05-01

    Currently, the low yield, high power loss, and poor stability of organic light emitting diodes (OLEDs) panels are remaining as the obstacles to the fast growth of the OLED industry, especially for the lighting application. The p-i-n OLEDs have been widely recognized as the promising method to circumvent these bottleneck factors, due to the unique merit of the electrical doping to enable low power loss. In p-i-n OLEDs, the frequently used n-doped electron transport layers (n-ETL1) such as n-BCP, n-Alq3 possess markedly lower conductivities but better capabilities of injecting electrons into ETL such as BCP, Alq3, as compared to another class of n-doped ETLs (n-ETL2), e.g., n-NTCDA, n-PTCDA, n-C60. Thus, in order to minimize the electron loss, we provide the structure of uniting two n-doped layers, cathode/ n-ETL2/ n-ETL1/ ETL. In p-i-n OLEDs, the hole current injected from the single p-doped hole transport layer (p-HTL) into the neat HTL must be limited, because the higher conductivity p-HTL has the higher lying highest occupied molecular orbital (HOMO) level, leading to a larger hole transport energy barrier (φB) at the interface with the neat HTL. Therefore, in order to minimize the hole loss, we suggest the structure of uniting two p-HTLs, anode/ p-HTL2/ p-HTL1/ HTL. The p-HTL2 possesses high-lying HOMO level and thereby high conductivity, decreasing the ohmic loss in the hole conduction; the p-HTL1 features a low-lying HOMO level, reducing the φB.

  20. Density of states measurements in a p-i-n solar cell

    SciTech Connect

    Crandall, R.S.; Wang, Q.

    1996-05-01

    The authors describe results of density of states (DOS) profiling in p-i-n solar-cell devices using drive-level capacitance (DLC) techniques. Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. They show that the states in the central region are neutral dangling-bond defects, whereas those near the interfaces with the doped layers are charged dangling bonds.

  1. GeSn p-i-n waveguide photodetectors on silicon substrates

    NASA Astrophysics Data System (ADS)

    Peng, Yu-Hsiang; Cheng, H. H.; Mashanov, Vladimir I.; Chang, Guo-En

    2014-12-01

    We report an investigation on GeSn p-i-n waveguide photodetectors grown on a Ge-buffered Si wafer. In comparison with a reference Ge detector, the GeSn detector shows an enhanced responsivity in the measured energy range, mainly attributed to the smaller bandgap caused by Sn-alloying. Analysis of the quantum efficiency indicates that increasing the Sn content in the active layers can significantly shorten the required device length to achieve the maximum efficiency. The present investigation demonstrates the planar photodetectors desired for monolithic integration with electronic devices.

  2. GeSn p-i-n waveguide photodetectors on silicon substrates

    SciTech Connect

    Peng, Yu-Hsiang; Chang, Guo-En; Cheng, H. H.; Mashanov, Vladimir I.

    2014-12-08

    We report an investigation on GeSn p-i-n waveguide photodetectors grown on a Ge-buffered Si wafer. In comparison with a reference Ge detector, the GeSn detector shows an enhanced responsivity in the measured energy range, mainly attributed to the smaller bandgap caused by Sn-alloying. Analysis of the quantum efficiency indicates that increasing the Sn content in the active layers can significantly shorten the required device length to achieve the maximum efficiency. The present investigation demonstrates the planar photodetectors desired for monolithic integration with electronic devices.

  3. Planarization of High Aspect Ratio P-I-N Diode Pillar Arrays for Blanket Electrical Contacts

    SciTech Connect

    Voss, L F; Shao, Q; Reinhardt, C E; Graff, R T; Conway, A M; Nikolic, R J; Deo, N; Cheung, C L

    2009-03-05

    Two planarization techniques for high aspect ratio three dimensional pillar structured P-I-N diodes have been developed in order to enable a continuous coating of metal on the top of the structures. The first technique allows for coating of structures with topography through the use of a planarizing photoresist followed by RIE etch back to expose the tops of the pillar structure. The second technique also utilizes photoresist, but instead allows for planarization of a structure in which the pillars are filled and coated with a conformal coating by matching the etch rate of the photoresist to the underlying layers. These techniques enable deposition using either sputtering or electron beam evaporation of metal films to allow for electrical contact to the tops of the underlying pillar structure. These processes have potential applications for many devices comprised of 3-D high aspect ratio structures. Two separate processes have been developed in order to ensure a uniform surface for deposition of an electrode on the {sup 10}Boron filled P-I-N pillar structured diodes. Each uses S1518 photoresist in order to achieve a relatively uniform surface despite the non-uniformity of the underlying detector. Both processes allow for metallization of the final structure and provide good electrical continuity over a 3D pillar structure.

  4. High-speed dual-wavelength demultiplexing and detection in a monolithic superlattice p-i-n waveguide detector array

    NASA Technical Reports Server (NTRS)

    Larsson, A.; Andrekson, P. A.; Andersson, P.; Eng, S. T.; Salzman, J.

    1986-01-01

    High-speed (1 Gbit/x) dual-wavelength demultiplexing and detection in a monolithic linear array of superlattice p-i-n photodetectors in a waveguide configuration is demonstrated. A crosstalk attenuation of 28 dB was achieved between two digital transmission channels with an interchannel wavelength spacing of 30 nm. The device performance is a result of an enhanced electroabsorption due to the quantum-confined Stark effect in the superlattice p-i-n diodes.

  5. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon.

    PubMed

    Nam, Ju Hyung; Afshinmanesh, Farzaneh; Nam, Donguk; Jung, Woo Shik; Kamins, Theodore I; Brongersma, Mark L; Saraswat, Krishna C

    2015-06-15

    A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics. Enhanced light absorption up to 1550 nm is observed due to the residual biaxial tensile strain induced during the epitaxial growth of Ge caused by cooling after the deposition. This truly Si-compatible Ge photodetector using monolithic integration enables new opportunities for high-performance GOI based photonic devices on Si platform. PMID:26193560

  6. Negative differential resistance in direct bandgap GeSn p-i-n structures

    NASA Astrophysics Data System (ADS)

    Schulte-Braucks, C.; Stange, D.; von den Driesch, N.; Blaeser, S.; Ikonic, Z.; Hartmann, J. M.; Mantl, S.; Buca, D.

    2015-07-01

    Certain GeSn alloys are group IV direct bandgap semiconductors with prospects for electrical and optoelectronical applications. In this letter, we report on the temperature dependence of the electrical characteristics of high Sn-content Ge 0.89 Sn 0.11 p-i-n diodes. NiGeSn contacts were used to minimize the access resistance and ensure compatibility with silicon technology. The major emphasis is placed on the negative differential resistance in which peak to valley current ratios up to 2.3 were obtained. TCAD simulations were performed to identify the origin of the various current contributions, providing evidence for direct band to band tunneling and trap assisted tunneling.

  7. Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

    DOE PAGESBeta

    King, M. P.; Armstrong, A. M.; Dickerson, J. R.; Vizkelethy, G.; Fleming, R. M.; Campbell, J.; Wampler, W. R.; Kizilyalli, I. C.; Bour, D. P.; Aktas, O.; et al

    2015-10-29

    Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 1013 cm-2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remainmore » superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.« less

  8. P-I-N CdTe gamma-ray detectors by liquid phase epitaxy (LPE)

    SciTech Connect

    Shin, S.H.; Niizawa, G.T.; Pasko, J.G.; Bostrup, G.L.; Ryan, F.J.; Khoshnevisan, M.; Westmark, C.I.; Fuller, C.

    1984-01-01

    A new device concept of CdTe gamma ray detectors has been demonstrated by using p+(HgCdTe)-n(CdTe)-n+(HgCdTe) diode structures. Both p+ and n/sup +/-type Hg/sub 0.25/Cd/sub 0.75/Te epilayers were grown by the liquid phase epitaxy (LPE) technique on semi-insulating CdTe sensor elements. The LPE-grown P-I-N structure offers potential advantages for p-n junction formation and ohmic contact over standard ion-implanted diodes or Schottky barrier devices. Detectors with active areas of 2 mm/sup 2/ were fabricated. Resolutions of 10 keV were obtained for the 122 keV gamma peak of Co/sup 57/ at room temperature.

  9. P-I-N CdTe gamma ray detectors by liquid phase epitaxy (LPE)

    SciTech Connect

    Shin, S.H.; Bostrup, G.L.; Fuller, C.; Khoshnevisan, M.; Niizawa, G.T.; Pasko, J.G.; Ryan, F.J.; Westmark, C.I.

    1985-02-01

    A new device concept for CdTe gamma ray detectors has been demonstrated using p/sup +/(HgCdTe)-n(CdTe)-n/sup +/ (HgCdTe) diode structures. Both p/sup +/ and n/sup +/ Hg /SUB 0.25/ Cd /SUB 0.75/ Te epilayers were grown by the liquid phase epitaxy (LPE) technique on semi-insulating CdTe sensor elements. The LPE grown P-I-N structure offers potential advantages for p-n junction and ohmic contact formation over standard ion implanted diodes or Schottky barrier devices. Detectors with active areas of 2 mm/sup 2/ were fabricated. Resolutions of 10 KeV were obtained for the 122 KeV gamma peak of Co/sup 57/ at room temperature.

  10. High performance p-i-n CdTe and CdZnTe detectors

    NASA Astrophysics Data System (ADS)

    Khusainov, A. Kh; Dudin, A. L.; Ilves, A. G.; Morozov, V. F.; Pustovoit, A. K.; Arlt, R. D.

    1999-06-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35°C cooling (by a Peltier cooler of 15×15×10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  11. Comprehensive physics-based compact model for fast p-i-n diode using MATLAB and Simulink

    NASA Astrophysics Data System (ADS)

    Xue, Peng; Fu, Guicui; Zhang, Dong

    2016-07-01

    In this study, a physics-based model for the fast p-i-n diode is proposed. The model is based on the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. The physical characteristics of fast diode design concepts such as local lifetime control (LLC), emitter control (EMCON) and deep field stop are taken into account. Based on these fast diode design concepts, the ADE is solved for all injection levels instead of high-level injection only as usually done. The variation of high-level lifetime due to local lifetime control is also included in the solution. With the deep field stop layer taken into consideration, the depletion behavior in the N-base during reverse recovery is redescribed. Some physical effects such as avalanche generation and carrier recombination in the depletion region are also taken into account. To be self contained, a parameter extraction method is proposed to extract all the parameters of the model. In the end, the static and reverse recovery experiments for a commercial EMCON diode and a LLC diode are used to validate the proposed model. The simulation results are compared with experiment results and good agreement is obtained.

  12. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    PubMed Central

    Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

    2016-01-01

    Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature. PMID:26751446

  13. GaAs nanowire array solar cells with axial p-i-n junctions.

    PubMed

    Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

    2014-06-11

    Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics. PMID:24849203

  14. Si Radial p-i-n Junction Photovoltaic Arrays with Built-In Light Concentrators.

    PubMed

    Yoo, Jinkyoung; Nguyen, Binh-Minh; Campbell, Ian H; Dayeh, Shadi A; Schuele, Paul; Evans, David; Picraux, S Tom

    2015-05-26

    High-performance photovoltaic (PV) devices require strong light absorption, low reflection and efficient photogenerated carrier collection for high quantum efficiency. Previous optical studies of vertical wires arrays have revealed that extremely efficient light absorption in the visible wavelengths is achievable. Photovoltaic studies have further advanced the wire approach by employing radial p-n junction architectures to achieve more efficient carrier collection. While radial p-n junction formation and optimized light absorption have independently been considered, PV efficiencies have further opportunities for enhancement by exploiting the radial p-n junction fabrication procedures to form arrays that simultaneously enhance both light absorption and carrier collection efficiency. Here we report a concept of morphology control to improve PV performance, light absorption and quantum efficiency of silicon radial p-i-n junction arrays. Surface energy minimization during vapor phase epitaxy is exploited to form match-head structures at the tips of the wires. The match-head structure acts as a built-in light concentrator and enhances optical absorptance and external quantum efficiencies by 30 to 40%, and PV efficiency under AM 1.5G illumination by 20% compared to cylindrical structures without match-heads. The design rules for these improvements with match-head arrays are systematically studied. This approach of process-enhanced control of three-dimensional Si morphologies provides a fab-compatible way to enhance the PV performance of Si radial p-n junction wire arrays. PMID:25961330

  15. Tunable superlattice p-i-n photodetectors: Characteristics, theory, and applications

    NASA Technical Reports Server (NTRS)

    Larsson, Anders; Andrekson, Peter A.; Eng, Sverre T.; Yariv, Amnon

    1988-01-01

    Extended measurements and theory on the recently developed monolithic wavelength demultiplexer consisting of voltage-tunable superlattice p-i-n photodetectors in a waveguide configuration are discussed. It is shown that the device is able to demultiplex and detect two optical signals with a wavelength separation of 20 nm directly into different electrical channels at a data rate of 1 Gb/s and with a crosstalk attenuation varying between 20 and 28 dB, depending on the polarization. The minimum acceptable crosstalk attenuation at a data rate of 100 Mb/s is determined to be 10 dB. The feasibility of using the device as a polarization angle sensor for linearly polarized light is also demonstrated. A theory for the emission of photogenerated carriers out of the quantum wells is included, since this is potentially a speed limiting mechanism in these detectors. It is shown that a theory of thermally assisted tunneling by polar optical phonon interaction is able to predict emission times consistent with the observed temporal response.

  16. Dead layer on silicon p-i-n diode charged-particle detectors

    SciTech Connect

    Wall, B. L.; Amsbaugh, John F.; Beglarian, A.; Bergmann, T.; Bichsel, H. C.; Bodine, L. I.; Boyd, N. M.; Burritt, Tom H.; Chaoui, Z.; Corona, T. J.; Doe, Peter J.; Enomoto, S.; Harms, F.; Harper, Gregory; Howe, M. A.; Martin, E. L.; Parno, D. S.; Peterson, David; Petzold, Linda; Renschler, R.; Robertson, R. G. H.; Schwarz, J.; Steidl, M.; Van Wechel, T. D.; VanDevender, Brent A.; Wustling, S.; Wierman, K. J.; Wilkerson, J. F.

    2014-04-21

    Abstract Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon p-i-n diode used in the KATRIN neutrinomass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by discussion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.

  17. Quantum oscillations in the photocurrent of GaAs/AlAs p-i-n diodes

    NASA Astrophysics Data System (ADS)

    Vdovin, E. E.; Ashdown, M.; Patanè, A.; Eaves, L.; Campion, R. P.; Khanin, Yu. N.; Henini, M.; Makarovsky, O.

    2014-05-01

    We report large amplitude quantum oscillations and negative differential conductance in the bias voltage-dependent photocurrent of p-i-n GaAs diodes with an AlAs barrier in the intrinsic (i) region. The oscillations appear only when the devices are illuminated with above-band gap radiation. They are strongly suppressed by a weak (˜2 T) in-plane magnetic field. Their period, amplitude, and magnetic field dependence are explained in terms of the quantized motion of confined photoexcited electrons and holes in the triangular potential wells formed by the AlAs barrier and the strong electric field in the intrinsic region. With increasing electric field, the energy levels of the electrons (holes) successively reach the top of their confining potentials, thus leading to a larger overlap of their wave functions with the free carriers in the p- (and n-) doped electrodes and to the observed oscillatory modulation of the recombination rate and photocurrent as a function of the applied voltage. The effect on the photocurrent oscillations amplitude of placing a layer of InAs quantum dots in the AlAs barrier layer is also examined.

  18. Development of a P-I-N HgCdTe photomixer for laser heterodyne spectrometry

    NASA Technical Reports Server (NTRS)

    Bratt, Peter R.

    1987-01-01

    An improved HgCdTe photomixer technology was demonstrated employing a p-i-n photodiode structure. The i-region was near intrinsic n-type HgCdTe; the n-region was formed by B+ ion implantation; and the p-region was formed either by a shallow Au diffusion or by a Pt Schottky barrier. Experimental devices in a back-side illuminated mesa diode configuration were fabricated, tested, and delivered. The best photomixer was packaged in a 24-hour LN2 dewar along with a cooled GaAs FET preamplifier. Testing was performed by mixing black-body radiation with a CO2 laser beam and measuring the IF signal, noise, and signal-to-noise ratio in the GHz frequency range. Signal bandwidth for this photomixer was 1.3 GHz. The heterodyne NEP was 4.4 x 10 to the -20 W/Hz out to 1 GHz increasing to 8.6 x 10 to the -10 W/Hz at 2 GHz. Other photomixers delivered on this program had heterodyne NEPs at 1 GHz ranging from 8 x 10 to the -20 to 4.4 x 10 to the -19 W/Hz and NEP bandwidths from 2 to 4 GHz.

  19. The electrochemical capacitance-voltage characterization of InP based p-i-n structures

    NASA Astrophysics Data System (ADS)

    Wang, Li-wei; Lu, Yi-dan; Xu, Jin-tong; Li, Xiang-yang

    2013-09-01

    Electrochemical Capacitance-Voltage (EC-V) profiling is currently one of the most often used methods for majority carrier concentration depth profiling of semiconductors. The experiments of EC-V profiling on InP based structures were conducted by Wafer Profiler CVP21, and there are two problems in the experiments of InP based p-i-n structures : a)the experimental results of EC-V profiling of i layer were not in line with the theoretically data after the EC-V profiling of p layer, which can be measured within the error range; b) The measurements of etching depth were not very accurate. In this paper, we made comparative experiments on InP based n-i-n structures, and find out a method to deal with the first problem: firstly etch p layer before EC-V profiling, so we can gain a relatively accurate result of EC-V profiling of i layer. Besides, use back contacts instead of front contacts to do the EC-V profiling according to the instruction book of the Wafer Profiler CVP21. Then the author tried to infer the reason that results in the first problem theoretically. Meanwhile we can calibrate the etching depth through Profile-system and Scanning Probe Microscope (SPM). And there are two possible reasons which result in the second problem: the defects of the semiconductors and the electrolyte we used to etch the semiconductors.

  20. Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Liu, Pei; Siontas, Stylianos; Zaslavsky, A.; Pacifici, D.; Ha, Jong-Yoon; Krylyuk, S.; Davydov, A. V.

    2015-03-01

    We report on the fabrication and photovoltaic characteristics of vertical arrays of silicon axial p-i-n junction nanowire (NW) solar cells grown by vapor-liquid-solid (VLS) epitaxy. NW surface passivation with silicon dioxide shell is shown to enhance carrier recombination time, open-circuit voltage (VOC), short-circuit current density (JSC), and fill factor (FF). The photovoltaic performance of passivated individual NW and NW arrays was compared under 532 nm laser illumination with power density of ˜10 W/cm2. Higher values of VOC and FF in the NW arrays are explained by enhanced light trapping. In order to verify the effect of NW density on light absorption and hence on the photovoltaic performance of NW arrays, dense Si NW arrays were fabricated using nanoimprint lithography to periodically arrange the gold seed particles prior to epitaxial growth. Compared to sparse NW arrays fabricated using VLS growth from randomly distributed gold seeds, the nanoimprinted NW array solar cells show a greatly increased peak external quantum efficiency of ˜8% and internal quantum efficiency of ˜90% in the visible spectral range. Three-dimensional finite-difference time-domain simulations of Si NW periodic arrays with varying pitch (P) confirm the importance of high NW density. Specifically, due to diffractive scattering and light trapping, absorption efficiency close to 100% in the 400-650 nm spectral range is calculated for a Si NW array with P = 250 nm, significantly outperforming a blanket Si film of the same thickness.

  1. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

    PubMed

    Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

    2016-01-01

    Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature. PMID:26751446

  2. Electrically injected near-infrared light emission from single InN nanowire p-i-n diode

    SciTech Connect

    Le, Binh Huy; Zhao, Songrui; Tran, Nhung Hong; Mi, Zetian

    2014-12-08

    We report on the achievement of electroluminescence emission of single InN p-i-n nanowire devices. InN p-i-n nanowire structures were grown directly on Si substrate by plasma-assisted molecular beam epitaxy and subsequently transferred to foreign substrate for the fabrication of single nanowire light emitting diodes. Electroluminescence emission with a peak energy of 0.71 eV (1.75 μm) was observed at 77 K. The measurement of near-bandgap electroluminescence provides unambiguous evidence for the achievement of p-type conduction of InN.

  3. Drift Phenomena of Forward and Reverse Recovery Characteristics in 0001 4H-SiC p-i-n Diode

    NASA Astrophysics Data System (ADS)

    Nakayama, Koji; Sugawara, Yoshitaka; Tsuchida, Hidekazu; Kimura, Chiharu; Aoki, Hidemitsu

    2011-04-01

    4H-SiC p-i-n diodes fabricated on the (0001) C-face showed smaller forward voltage drift and minimal changes in reverse recovery characteristics after a forward bias stress test compared to those observed on the (0001) Si-face. These drift phenomena in 4H-SiC p-i-n diodes could be explained by increased recombination along the perimeter of single Shockley-type stacking faults. It is suggested that the number of single Shockley-type stacking faults significantly decreased in the drift layer fabricated on (0001) C-face in comparison with that on (0001) Si-face.

  4. Electrically injected near-infrared light emission from single InN nanowire p-i-n diode

    NASA Astrophysics Data System (ADS)

    Le, Binh Huy; Zhao, Songrui; Tran, Nhung Hong; Mi, Zetian

    2014-12-01

    We report on the achievement of electroluminescence emission of single InN p-i-n nanowire devices. InN p-i-n nanowire structures were grown directly on Si substrate by plasma-assisted molecular beam epitaxy and subsequently transferred to foreign substrate for the fabrication of single nanowire light emitting diodes. Electroluminescence emission with a peak energy of 0.71 eV (1.75 μm) was observed at 77 K. The measurement of near-bandgap electroluminescence provides unambiguous evidence for the achievement of p-type conduction of InN.

  5. Lead Halide Perovskite Photovoltaic as a Model p-i-n Diode.

    PubMed

    Miyano, Kenjiro; Tripathi, Neeti; Yanagida, Masatoshi; Shirai, Yasuhiro

    2016-02-16

    The lead halide perovskite photovoltaic cells, especially the iodide compound CH3NH3PbI3 family, exhibited enormous progress in the energy conversion efficiency in the past few years. Although the first attempt to use the perovskite was as a sensitizer in a dye-sensitized solar cell, it has been recognized at the early stage of the development that the working of the perovskite photovoltaics is akin to that of the inorganic thin film solar cells. In fact, theoretically perovskite is always treated as an ordinary direct band gap semiconductor and hence the perovskite photovoltaics as a p-i-n diode. Despite this recognition, research effort along this line of thought is still in pieces and incomplete. Different measurements have been applied to different types of devices (different not only in the materials but also in the cell structures), making it difficult to have a coherent picture. To make the situation worse, the perovskite photovoltaics have been plagued by the irreproducible optoelectronic properties, most notably the sweep direction dependent current-voltage relationship, the hysteresis problem. Under such circumstances, it is naturally very difficult to analyze the data. Therefore, we set out to make hysteresis-free samples and apply time-tested models and numerical tools developed in the field of inorganic semiconductors. A series of electrical measurements have been performed on one type of CH3NH3PbI3 photovoltaic cells, in which a special attention was paid to ensure that their electronic reproducibility was better than the fitting error in the numerical analysis. The data can be quantitatively explained in terms of the established models of inorganic semiconductors: current/voltage relationship can be very well described by a two-diode model, while impedance spectroscopy revealed the presence of a thick intrinsic layer with the help of a numerical solver, SCAPS, developed for thin film solar cell analysis. These results point to that CH3NH3PbI3 is an

  6. Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes

    NASA Astrophysics Data System (ADS)

    Lioliou, G.; Meng, X.; Ng, J. S.; Barnett, A. M.

    2016-03-01

    Electrical characterization of two GaAs p+-i-n+ mesa X-ray photodiodes over the temperature range 0 °C to 120 °C together with characterization of one of the diodes as an X-ray detector over the temperature range 0 °C to 60 °C is reported as part of the development of photon counting X-ray spectroscopic systems for harsh environments. The randomly selected diodes were fully etched and unpassivated. The diodes were 200 μm in diameter and had 7 μm thick i layers. The leakage current density was found to increase from (3 ± 1) nA/cm-2 at 0 °C to (24.36 ± 0.05) μA/cm-2 at 120 °C for D1 and from a current density smaller than the uncertainty (0.2 ± 1.2) nA/cm-2 at 0 °C to (9.39 ± 0.02) μA/cm-2 at 120 °C for D2 at the maximum investigated reverse bias (15 V). The best energy resolution (FWHM at 5.9 keV) was achieved at 5 V reverse bias, at each temperature; 730 eV at 0 °C, 750 eV at 20 °C, 770 eV at 40 °C, and 840 eV at 60 °C. It was found that the parallel white noise was the main source of the photopeak broadening only when the detector operated at 60 °C, at 5 V, 10 V, and 15 V reverse bias and at long shaping times (>5 μs), whereas the sum of the dielectric noise and charge trapping noise was the dominant source of noise for all the other spectra.

  7. Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature

    NASA Astrophysics Data System (ADS)

    Lioliou, G.; Meng, X.; Ng, J. S.; Barnett, A. M.

    2016-03-01

    Two GaAs mesa p+-i-n+ photodiodes intended for photon counting X-ray spectroscopy, having an i layer thickness of 7 μm and diameter of 200 μm, have been characterized electrically, for their responsivity at the wavelength range 580 nm to 980 nm and one of them for its performance at detection of soft X-rays, at room temperature. Dark current and capacitance measurements as a function of applied forward and reverse bias are presented. The results show low leakage current densities, in the range of nA/cm2 at the maximum internal electric field (22 kV/cm). The unintentional doping concentration of the i layer, calculated from capacitance measurements, was found to be <1014 cm-3. Photocurrent measurements were performed under visible and near infrared light illumination for both diodes. The analysis of these measurements suggests the presence of a non-active (dead) layer (0.16 μm thickness) at the p+ side top contact interface, where the photogenerated carriers do not contribute to the photocurrent, possibly due to recombination. One of the diodes, D1, was also characterized as detector for room temperature photon counting X-ray spectroscopy; the best energy resolution achieved (FWHM) at 5.9 keV was 745 eV. The noise analysis of the system, based on spectra obtained at different shaping times and applied reverse biases, showed that the dominant source of noise is the dielectric noise. It was also calculated that there was at least (165±24) eV charge trapping noise at 0 V.

  8. Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications

    SciTech Connect

    Zhang, Peng; Liu, Pei; Siontas, Stylianos; Zaslavsky, A.; Pacifici, D.; Ha, Jong-Yoon; Krylyuk, S.; Davydov, A. V.

    2015-03-28

    We report on the fabrication and photovoltaic characteristics of vertical arrays of silicon axial p-i-n junction nanowire (NW) solar cells grown by vapor-liquid-solid (VLS) epitaxy. NW surface passivation with silicon dioxide shell is shown to enhance carrier recombination time, open-circuit voltage (V{sub OC}), short-circuit current density (J{sub SC}), and fill factor (FF). The photovoltaic performance of passivated individual NW and NW arrays was compared under 532 nm laser illumination with power density of ∼10 W/cm{sup 2}. Higher values of V{sub OC} and FF in the NW arrays are explained by enhanced light trapping. In order to verify the effect of NW density on light absorption and hence on the photovoltaic performance of NW arrays, dense Si NW arrays were fabricated using nanoimprint lithography to periodically arrange the gold seed particles prior to epitaxial growth. Compared to sparse NW arrays fabricated using VLS growth from randomly distributed gold seeds, the nanoimprinted NW array solar cells show a greatly increased peak external quantum efficiency of ∼8% and internal quantum efficiency of ∼90% in the visible spectral range. Three-dimensional finite-difference time-domain simulations of Si NW periodic arrays with varying pitch (P) confirm the importance of high NW density. Specifically, due to diffractive scattering and light trapping, absorption efficiency close to 100% in the 400–650 nm spectral range is calculated for a Si NW array with P = 250 nm, significantly outperforming a blanket Si film of the same thickness.

  9. Broadband and high-speed silicon dual-ring modulator based on p-i-n-i-p junction

    NASA Astrophysics Data System (ADS)

    Haq, Bahawal; Rasras, Mahmoud

    2016-05-01

    We propose a silicon dual-ring modulator consisting of two serially cascaded rings embedded with p-i-n-i-p junctions driven by one signal, in contrast to a differential signal pair. The simulations for optimizing the design of the phase shifter and the optical response of the both rings are performed. We show that the device performs better than the single ring. The modulator has a higher optical bandwidth, 3-dB modulation bandwidth and bit rate as compared to a single ring. In contrast to a cascaded ring modulator driven by a differential signal pair, it can be driven by a single p-i-n-i-p junction and RF signal. A serially coupled ring resonator has three times the resonance linewidth as compared to a single ring. Furthermore, it can support significantly higher data rates of up to 13 GHz.

  10. GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy

    NASA Astrophysics Data System (ADS)

    Zheng, Jun; Wang, Suyuan; Liu, Zhi; Cong, Hui; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

    2016-01-01

    We report an investigation of normal-incidence GeSn-based p-i-n photodetectors (PDs) with a Ge0.94Sn0.06 active layer grown using sputter epitaxy on a Ge(100) substrate. A low dark current density of 0.24 A/cm2 was obtained at a reverse bias of 1 V. A high optical responsivity of the Ge0.94Sn0.06/Ge p-i-n PDs at zero bias was achieved, with an optical response wavelength extending to 1985 nm. The temperature-dependent optical-response measurement was performed, and a clear redshift absorption edge was observed. This work presents an approach for developing efficient and cost-effective GeSn-based infrared devices.

  11. Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

    NASA Astrophysics Data System (ADS)

    Liu, Zhi; Li, Yaming; He, Chao; Li, Chuanbo; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

    2014-05-01

    Horizontal injection Ge p-i-n ridge waveguide light emitting diodes (LEDs) were fabricated on n--Si(001) substrates by ultrahigh vacuum chemical vapor deposition. The direct-bandgap electroluminescence (EL) of Ge waveguide LEDs under a continuous/pulse electrical pump was studied. The heating effect from a continuous electrical pump was found to significantly enhance the emission of devices. The top surface EL intensity of the Ge waveguide LEDs significantly depended on the position. Most direct-bandgap radiative recombination of Ge p-i-n waveguide LEDs occurred near the N+ region of the junction. This interesting phenomenon could be explained by the carrier distribution in the junction and the pseudo-direct bandgap of Ge.

  12. Superlinear generation of exciton and related paramagnetism induced by forward current in a diamond p-i-n junction

    SciTech Connect

    Natori, Kenji

    2015-02-07

    The concentration of excitons generated in a high-quality diamond p-i-n junction is investigated considering the forward current characteristics of the junction. As the forward current in the junction increases, the exciton concentration increases superlinearly, contrary to the linear increases of the electron and hole concentration. This tendency suggests a superlinear increase in emission intensity due to exciton recombination. The increase rate is more radical than quadratic, in accordance with the observed increase of the integrated intensity of free exciton emission. To estimate the concentration of triplet excitons generated in the p-i-n junction, observation of the paramagnetism due to the exciton spin moment is proposed. The magnetic susceptibility superlinearly increases with the increase in the forward current, unlike any other magnetic property of the device.

  13. Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

    SciTech Connect

    Liu, Zhi; Li, Yaming; He, Chao; Li, Chuanbo; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen Wang, Qiming

    2014-05-12

    Horizontal injection Ge p-i-n ridge waveguide light emitting diodes (LEDs) were fabricated on n{sup −}-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. The direct-bandgap electroluminescence (EL) of Ge waveguide LEDs under a continuous/pulse electrical pump was studied. The heating effect from a continuous electrical pump was found to significantly enhance the emission of devices. The top surface EL intensity of the Ge waveguide LEDs significantly depended on the position. Most direct-bandgap radiative recombination of Ge p-i-n waveguide LEDs occurred near the N{sup +} region of the junction. This interesting phenomenon could be explained by the carrier distribution in the junction and the pseudo-direct bandgap of Ge.

  14. Severe test of a dangling bond only model of thin film silicon p-i-n solar cell degradation

    SciTech Connect

    Willett, D.R.

    1987-06-25

    This paper uses a model that links previous research into the metastable defects found in undoped thin film Si:H or a-Si:H (TFS) films to the light-induced degradation of TFS solar cells. The fill factor changes of two experimental studies are modeled. The first series is a group of 704, 4-cm/sup 2/ p-i-n solar cells with eleven different i-layer thicknesses ranging from 1,000A to 200,000A. The second series is a group of 144, 4-cm/sup 2/ p-i-n solar cells all made in the same deposition and then exposed under different illumination levels and temperatures. The dangling bond model is shown to be an incomplete explanation of the fill factor changes due to light soaking. Data for the short time region and long time region cannot both be fit with the same parameters

  15. Large lateral photovoltaic effect in µc-SiOx:H/a-Si:H/c-Si p-i-n structure

    NASA Astrophysics Data System (ADS)

    Qiao, Shuang; Chen, Jianhui; Liu, Jihong; Zhang, Xinhui; Wang, Shufang; Fu, Guangsheng

    2016-03-01

    In this paper, we report on a large lateral photovoltaic effect (LPE) in a hydrogenated microcrystal silicon-oxygen (µc-SiOx:H)-based p-i-n structure. Compared with LPE in a hydrogenated amorphous silicon (a-Si:H)-based p-i-n structure, this structure showed an abnormal current-voltage (I-V) curve with a lower photoelectric conversion efficiency, but exhibited a much higher LPE with the highest position sensitivity of 64.3 mV/mm. We ascribe this to the enhancement of the lateral gradient of excess transmitted carriers induced by increasing both Schottky barrier and p-type layer body conductivity. Our results suggest that this µc-SiOx:H-based p-i-n structure may be a promising candidate for position-sensitive detectors (PSDs). Moreover, our results may also imply that solar cell devices with abnormal I-V curves (or low efficiency) could find their new applications in other aspects.

  16. Efficiency Improvement by Transparent Contact Layer in InGaN-Based p-i-n Solar Cells

    NASA Astrophysics Data System (ADS)

    Shim, J. P.; Jeon, S. R.; Lee, D. S.

    2011-12-01

    InGaN/GaN p-i-n solar cells with 10.8% indium composition were fabricated with different current spreading layers and metal-grid electrodes. Ni/Au (5nm/5nm) and ITO (150 nm) were used as a spreading layer for comparison. The solar cell with the ITO current spreading layer showed better results than Ni/Au, a 79.5% fill factor and 1% conversion efficiency. Optimization of the metal-gird electrodes also affected on solar cell efficiency.

  17. Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

    NASA Astrophysics Data System (ADS)

    Tanaka, Atsushi; Matsuhata, Hirofumi; Kawabata, Naoyuki; Mori, Daisuke; Inoue, Kei; Ryo, Mina; Fujimoto, Takumi; Tawara, Takeshi; Miyazato, Masaki; Miyajima, Masaaki; Fukuda, Kenji; Ohtsuki, Akihiro; Kato, Tomohisa; Tsuchida, Hidekazu; Yonezawa, Yoshiyuki; Kimoto, Tsunenobu

    2016-03-01

    The growth of Shockley type stacking faults in p-i-n diodes fabricated on the C-face of 4H-SiC during forward current operation was investigated using Berg-Barrett X-ray topography and photoluminescence imaging. After forward current experiment, Shockley type stacking faults were generated from very short portions of basal plane dislocations lower than the conversion points to threading edge dislocations in the epitaxial layer. The growth behavior of Shockley type stacking faults was discussed. Growth of stacking faults in the substrates was not observed.

  18. Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

    NASA Astrophysics Data System (ADS)

    Cao, Yunqing; Lu, Peng; Zhang, Xiaowei; Xu, Jun; Xu, Ling; Chen, Kunji

    2014-11-01

    Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs/SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si/i-(Si QDs/SiC multilayers)/p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency (PCE) of 6.28%.

  19. Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes

    NASA Astrophysics Data System (ADS)

    Xue, Shiwei; Xu, Jintong; Li, Xiangyang

    2015-04-01

    In this article, we introduced how to build a physical model of refer to the device structure and parameters. Simulations for solar-blind AlGaN based p-i-n photodiodes spectral characteristics were conducted in use of Silvaco TCAD, where device structure and parameters are comprehensively considered. In simulation, the effects of polarization, Urbach tail, mobility, saturated velocities and lifetime in AlGaN device was considered. Especially, we focused on how the concentration-dependent Shockley-Read-Hall (SRH) recombination model affects simulation results. By simulating, we analyzed the effects in spectral response caused by TAUN0 and TAUP0, and got the values of TAUN0 and TAUP0 which can bring a result coincides with test results. After that, we changed their values and made the simulation results especially the part under 255 nm performed better. In conclusion, the spectral response between 200 nm and 320 nm of solar-blind AlGaN based p-i-n photodiodes were simulated and compared with test results. We also found that TAUN0 and TAUP0 have a large impact on spectral response of AlGaN material.

  20. Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

    PubMed Central

    2014-01-01

    Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs/SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si/i-(Si QDs/SiC multilayers)/p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency (PCE) of 6.28%. PACS 81.07.Ta; 78.67.Pt; 88.40.jj PMID:25489285

  1. Hump-shaped internal collection efficiency of degraded a-Si:H {ital p-i-n} solar cells

    SciTech Connect

    Smole, F.; Topic, M.; Furlan, J.; Kusian, W.

    1997-07-01

    Measured internal collection efficiency (ICE) characteristics of annealed and degraded a-Si:H p-i-n solar cells were used for an analysis of their internal behavior. Using the numerical simulator ASPIN, simulations were performed in order to fit and explain pronounced hump-shaped voltage-dependent ICE characteristics of degraded structures under weak short-wavelength illumination. Agreement with measured ICE characteristics for a degraded cell was obtained only if in addition to the introduction of light-induced dangling bond defect states, their capture cross sections were also increased, in particular the capture cross section for the charged defect states were increased. This caused a change in the occupancy of defect states at the p-i interface and front part of the i layer under forward biases. Consequently, the electric field in the front part of the cell was sustained under higher forward biases, resulting in recovery of the ICE. {copyright} {ital 1997 American Institute of Physics.}

  2. Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

    SciTech Connect

    King, M. P.; Armstrong, A. M.; Dickerson, J. R.; Vizkelethy, G.; Fleming, R. M.; Campbell, J.; Wampler, W. R.; Kizilyalli, I. C.; Bour, D. P.; Aktas, O.; Nie, H.; Disney, D.; Wierer, Jr., J.; Allerman, A. A.; Moseley, M. W.; Kaplar, R. J.

    2015-10-29

    Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 1013 cm-2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.

  3. The effect of embedded nanopillars on the built-in electric field of amorphous silicon p-i-n devices

    NASA Astrophysics Data System (ADS)

    Kirkpatrick, T.; Simmons, C. B.; Akey, A. J.; Tabet, N.; Buonassisi, T.

    2016-05-01

    In this work, we report on the experimental modification of the built-in electric field of a-Si:H p-i-n junctions, resulting from Ag nanopillars embedded within the intrinsic layer (i-layer). Increased open-circuit voltages, from J-V traces, and reduced charge transit-times, from time-of-flight (ToF) measurements, indicate that the built-in electric field within the i-layer is increased with respect to unstructured reference samples. Decreased short-circuit current density values coupled with competing diode J-V characteristics, however, indicate that the charge collection from the i-layer is significantly decreased for the nanopillar samples. Theoretical and functional analysis of the ToF data reaffirms both reduced charge-transit times and decreased charge collection, and is able to quantitatively confirm the enhanced built-in electric field of the nanopillar samples.

  4. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

    NASA Astrophysics Data System (ADS)

    Awan, I. T.; Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

    2014-08-01

    In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ˜20 meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ˜-75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators.

  5. Analytical and equivalent-circuit models based on numerical solutions for amorphous silicon p/i/n solar cells

    NASA Astrophysics Data System (ADS)

    Misiakos, K.; Lindholm, F. A.

    The authors present contact-to-contact computer solutions of the a-Si:H p/i/n solar cell and uses these to obtain the approximations and insight needed for the development of analytical models. The numerical results allow study of many aspects of internal variables as functions of position, terminal voltage, and phonon flux density. Based on the numerical results, analytical and equivalent-circuit models are proposed which support each other and explain the physical origin of interdependencies among such variables as quantum efficiency, electric field and recombination rate profiles, and their relation to current-voltage characteristics. The concept of the limiting carrier is mathematically treated by separating the current into photocollected and back-injection components. The limiting carrier is the carrier with the least photocollected current.

  6. GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

    NASA Astrophysics Data System (ADS)

    Tseng, H. H.; Li, H.; Mashanov, V.; Yang, Y. J.; Cheng, H. H.; Chang, G. E.; Soref, R. A.; Sun, G.

    2013-12-01

    We report an investigation of GeSn-based p-i-n photodiodes with an active GeSn layer that is almost fully strained. The results show that (a) the response of the Ge/GeSn/Ge heterojunction photodiodes is stronger than that of the reference Ge-based photodiodes at photon energies above the 0.8 eV direct bandgap of bulk Ge (<1.55 μm), and (b) the optical response extends to lower energy regions (1.55-1.80 μm wavelengths) as characterized by the strained GeSn bandgap. A cusp-like spectral characteristic is observed for samples with high Sn contents, which is attributed to the significant strain-induced energy splitting of heavy and light hole bands. This work represents a step forward in developing GeSn-based infrared photodetectors.

  7. Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures.

    PubMed

    Khalil, Hagir M; Royall, Ben; Mazzucato, Simone; Balkan, Naci

    2012-01-01

    The low temperature photoluminescence under bias (PLb) and the photoconductivity (PC) of a p-i-n GaInNAs/GaAs multiple quantum well sample have been investigated. Under optical excitation with photons of energy greater than the GaAs bandgap, PC and PLb results show a number of step-like increases when the sample is reverse biased. The nature of these steps, which depends upon the temperature, exciting wavelength and intensity and the number of quantum wells (QWs) in the device, is explained in terms of thermionic emission and negative charge accumulation due to the low confinement of holes in GaInNAs QWs. At high temperature, thermal escape from the wells becomes much more dominant and the steps smear out. PMID:23021540

  8. Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures

    PubMed Central

    2012-01-01

    The low temperature photoluminescence under bias (PLb) and the photoconductivity (PC) of a p-i-n GaInNAs/GaAs multiple quantum well sample have been investigated. Under optical excitation with photons of energy greater than the GaAs bandgap, PC and PLb results show a number of step-like increases when the sample is reverse biased. The nature of these steps, which depends upon the temperature, exciting wavelength and intensity and the number of quantum wells (QWs) in the device, is explained in terms of thermionic emission and negative charge accumulation due to the low confinement of holes in GaInNAs QWs. At high temperature, thermal escape from the wells becomes much more dominant and the steps smear out. PMID:23021540

  9. Optimizing light absorption in a thin-film p-i-n solar cell using a quasi-periodic grating

    NASA Astrophysics Data System (ADS)

    Atalla, Mahmoud R. M.

    2014-03-01

    A p-i-n solar cell is best suited for strong absorbers with poor collection capabilities. However, the absorption naturally decreases at photon energies close to the electronic bandgap of the semiconductor. We hypothesized that a quasi-periodic surface textures in the role of diffraction gratings at the back contact can efficiently scatter light increasing the optical path length inside the absorber layer. The effect of quasi-periodic corrugated backing metallic contact of various types was studied theoretically. To help optimizing the design of the quasi periodic grating the corresponding canonical problem was considered. The absorption of light was calculated using the rigorous coupled-wave approach. The n- and i-layers consist of isotropic nonhomogeneous multilayered semiconductor.

  10. Highly efficient p-i-n-type organic light emitting diodes on ZnO:Al substrates

    NASA Astrophysics Data System (ADS)

    Tomita, Yuto; May, Christian; Toerker, Michael; Amelung, Joerg; Eritt, Michael; Loeffler, Frank; Luber, Claus; Leo, Karl; Walzer, Karsten; Fehse, Karsten; Huang, Qiang

    2007-08-01

    Aluminum doped zinc oxide (ZAO) is presented in this letter as an alternative transparent electrode: optimized ZAO films offer excellent parameters for organic light emitting diodes (OLEDs). The ZAO films are applied to various p-i-n-type OLEDs. By using green phosphorescent molecules in a double emitter structure, very high efficiencies were obtained, namely, 54.6cd /A and 61.5lm/W for 100cd/m2 at 2.78V. Additionally, white OLEDs on ZAO demonstrated pure white emission independent of the luminance and high efficiencies of 12.6cd/A and 14.5lm/W for 100cd/m2 at 2.6V, which is comparable to indium-tin-oxide based white OLEDs.

  11. Temperature dependence of the photovoltage from Franz-Keldysh oscillations in a GaAs p+-i-n+ structure

    NASA Astrophysics Data System (ADS)

    Lee, Sang Jo; Sohn, Chang Won; Jo, Hyun-Jun; Han, Im Sik; Kim, Jong Su; Noh, Sam Kyu; Choi, Hyonkwang; Leem, Jae-Young

    2015-09-01

    The temperature dependences of the junction electric fields and photovoltage have been investigated for a GaAs p+-i-n+ structure by using photoreflectance (PR) spectroscopy. The electric field strength was examined through three types of Franz-Keldysh oscillation (FKO) analyses; then, the photovoltage was evaluated with respect to temperature in the range from 30 to 300 K. From the PR results, we observed two electric fields that are estimated to originate from two regions of FKOs in undoped GaAs and from the space charge region in highly-doped GaAs. The electric field under illumination decreased with decreasing temperature while the photovoltage obtained from the electric field increased. We also demonstrate that PR spectroscopy is a good method for investigating the photovoltaic effect in solar-cell structures.

  12. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

    SciTech Connect

    Awan, I. T.; Galvão Gobato, Y.; Galeti, H. V. A.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

    2014-08-07

    In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ∼20 meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ∼−75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators.

  13. Characterization of the SnO2/p Contact Resistance and SnO2 Properties in Operating a-Si:H p-i-n Solar Cells

    NASA Astrophysics Data System (ADS)

    Kaplan, Ruhý; Kaplan, Bengü

    2002-11-01

    A method is presented to characterize the TCO/p contact and the TCO sheet resistance in a-Si TCO/p-i-n superstrate devices. It is extremely useful for understanding resistance losses in modulus and diagnosing how plasma processing influences the TCO layers. Analysis of 4-terminal dark J-V measurements as a function of temperature on devices with varying TCO geometry yields the TCO/p contact resistance RTCO/p, its activation energy Ea or barrier height, and the TCO sheet resistance RSH in an integrated device structure. The method is applied to devices fabricated on different brands of commercial SnO2 substrates with different p-layers. Important new results are found. Ea for the SnO2/p contact resistance are about 40-50 meV which is < 2kT, and therefore not a rectifying barrier. RSH in one brand of SnO2 has a benefical decrease of 60% after a-Si deposition while another brand is unaffected. The impact of RSH or RTCO losses on the FF (fill factor) are determined.

  14. Performance and analysis of amorphous silicon p-i-n solar cells made by chemical-vapor deposition from disilane

    SciTech Connect

    Hegedus, S.S.; Rocheleau, R.E.; Buchanan, W.; Baron, B.N.

    1987-01-01

    The photovoltaic performance of amorphous silicon p-i-n solar cells made by chemical-vapor deposition (CVD) from disilane is reported and analyzed. Intrinsic layers were deposited at rates from 0.2 to 50 A/s at temperatures from 380 to 460 /sup 0/C with and without boron doping. Device performance was insensitive to substantial differences in disilane purity. A cell efficiency of 4% was achieved. The primary limitation to higher efficiency was low fill factor (<50%) due to high series resistance (>18 ..cap omega.. cm/sup 2/). Analysis of the series resistance indicated a contact-related resistance of 4--12 ..cap omega.. cm/sup 2/ and a photoconductive resistance composed of intrinsic layer thickness-independent (10 ..cap omega.. cm/sup 2/) and thickness-dependent terms. Analysis of the voltage dependence of the current collection indicated a fill factor of 60% would be expected in the absence of series resistance. The maximum short-circuit current of 12.5 mA/cm/sup 2/ (normalized to 100 mW/cm/sup 2/) resulted with a boron-doped i layer deposited at 440 /sup 0/C at 3.3 A/s. Modeling of the collection efficiency indicated collection widths up to 0.33 ..mu..m for boron-doped and 0.24 ..mu..m for undoped p-i-n devices. In order to achieve high-efficiency cells using CVD from disilane, the limitations imposed by low photoconductivity, a high density of states, and restricted cell design imposed by the high deposition temperatures would have to be overcome.

  15. Transparent conducting oxide contacts for n-i-p and p-i-n amorphous silicon solar cells

    SciTech Connect

    Hegedus, S.S.; Buchanan, W.A.; Eser, E.; Phillips, J.E.; Shafarman, W.N. |

    1997-02-01

    We investigate the effect of sputtered transparent conducting oxide (TCO) contacts on the device performance of ss/n-i-p/TCO and glass/SnO {sub 2}/p-i-n/TCO/Ag solar cells. TCO materials ITO and ZnO are compared, and found to have very similar transparency at the same sheet resistance. Sputtering ZnO with O{sub 2} in the Ar reduces FF for ss/n-i-p/ZnO devices, compared to sputtering without O{sub 2}. This is attributed to an interface not bulk effect. Sputtering ITO with O{sub 2} on the same devices increases J{sub SC} due to higher ITO transparency, compared to sputtering without O{sub 2} , but has no effect on FF. Based on curvature in the J(V) curve around V{sub OC}, the ZnO/p layer contact appears to be non-ohmic. For p-i-n/TCO/Ag devices, {mu}c-Si n-layers have much higher V{sub OC}, J{sub SC}, and FF for all variations of TCO/Ag back reflectors compared to an a-Si n-layer. Devices with ITO/Ag have lower V{sub OC} and J{sub SC} compared to devices with ZnO/Ag. Sputtering ZnO with O{sub 2} has no detrimental effect on devices with {mu}c-Si n-layers but severely reduces FF in devices with a-Si n-layers. {copyright} {ital 1997 American Institute of Physics.}

  16. Solar-blind AlGaN 256x256 p-i-n detectors and focal plane arrays

    NASA Astrophysics Data System (ADS)

    Reine, M. B.; Hairston, A.; Lamarre, P.; Wong, K. K.; Tobin, S. P.; Sood, A. K.; Cooke, C.; Pophristic, M.; Guo, S.; Peres, B.; Singh, R.; Eddy, C. R., Jr.; Chowdhury, U.; Wong, M. M.; Dupuis, R. D.; Li, T.; DenBaars, S. P.

    2006-02-01

    This paper reports the development of aluminum-gallium nitride (AlGaN or Al xGa 1-xN) photodiode technology for high-operability 256×256 hybrid Focal Plane Arrays (FPAs) for solar-blind ultraviolet (UV) detection in the 260-280 nm spectral region. These hybrid UV FPAs consist of a 256×256 back-illuminated AlGaN p-i-n photodiode array, operating at zero bias voltage, bump-mounted to a matching 256×256 silicon CMOS readout integrated circuit (ROIC) chip. The unit cell size is 30×30 μm2. The photodiode arrays were fabricated from multilayer AlGaN films grown by MOCVD on 2" dia. UV-transparent sapphire substrates. Improvements in AlGaN material growth and device design enabled high quantum efficiency and extremely low leakage current to be achieved in high-operability 256×256 p-i-n photodiode arrays with cuton and cutoff wavelengths of 260 and 280 nm, placing the response in the solar-blind wavelength region (less than about 280 nm) where solar radiation is heavily absorbed by the ozone layer. External quantum efficiencies (at V=0, 270 nm, no antireflection coating) as high as 58% were measured in backilluminated devices. A number of 256×256 FPAs, with the AlGaN arrays fabricated from films grown at three different facilities, achieved response operabilities as high as 99.8%, response nonuniformities (σ/μ) as low as 2.5%, and zero-bias resistance median values as high as 1×10 16 ohm, corresponding to R 0A products of 7×10 10 ohm-cm2. Noise Equivalent Irradiance (NEI) data were measured on these FPAs. Median NEI values at 1 Hz are 250-500 photons/pixel-s, with best-element values as low as 90 photons/pixel-s at 1 Hz.

  17. Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays

    NASA Astrophysics Data System (ADS)

    Reine, M. B.; Hairston, A.; Lamarre, P.; Wong, K. K.; Tobin, S. P.; Sood, A. K.; Cooke, C.; Pophristic, M.; Guo, S.; Peres, B.; Singh, R.; Eddy, C. R. _Jr., Jr.; Chowdhury, U.; Wong, M. M.; Dupuis, R. D.; Li, T.; DenBaars, S. P.

    2006-02-01

    This paper reports the development of aluminum-gallium nitride (AlGaN or Al xGa 1-xN) photodiode technology for high-operability 256×256 hybrid Focal Plane Arrays (FPAs) for solar-blind ultraviolet (UV) detection in the 260-280 nm spectral region. These hybrid UV FPAs consist of a 256×256 back-illuminated AlGaN p-i-n photodiode array, operating at zero bias voltage, bump-mounted to a matching 256×256 silicon CMOS readout integrated circuit (ROIC) chip. The unit cell size is 30×30 μm2. The photodiode arrays were fabricated from multilayer AlGaN films grown by MOCVD on 2" dia. UV-transparent sapphire substrates. Improvements in AlGaN material growth and device design enabled high quantum efficiency and extremely low leakage current to be achieved in high-operability 256×256 p-i-n photodiode arrays with cuton and cutoff wavelengths of 260 and 280 nm, placing the response in the solar-blind wavelength region (less than about 280 nm) where solar radiation is heavily absorbed by the ozone layer. External quantum efficiencies (at V=0, 270 nm, no antireflection coating) as high as 58% were measured in back-illuminated devices. A number of 256×256 FPAs, with the AlGaN arrays fabricated from films grown at three different facilities, achieved response operabilities as high as 99.8%, response nonuniformities (σ/μ) as low as 2.5%, and zero-bias resistance median values as high as 1×10 16 ohm, corresponding to R0A products of 7×10 10 ohm-cm2. Noise Equivalent Irradiance (NEI) data were measured on these FPAs. Median NEI values at 1 Hz are 250-500 photons/pixel-s, with best-element values as low as 90 photons/pixel-s at 1 Hz.

  18. Temperature dependent electroluminescence from all-Si-nanocrystal p-i-n diodes grown on dielectric substrates

    NASA Astrophysics Data System (ADS)

    Wu, L.; Puthen-Veettil, B.; Nomoto, K.; Hao, X.; Jia, X.; Lin, Z.; Yang, T. C.; Zhang, T.; Gutsch, S.; Conibeer, G.; Perez-Wurfl, I.

    2016-02-01

    In this work, we demonstrate for the first time the electroluminescence (EL) from a mesa isolated p-i-n diode based on silicon nanocrystals (Si NCs) embedded in a SiO2 matrix fabricated on a dielectric substrate. The structure fabricated on a dielectric substrate ensures that the EL signal originates entirely from the Si NC material. A small offset between the EL (1.28 eV) and photoluminescence (PL) (1.33 eV) peak energies has been observed at room temperature. We attribute this discrepancy to the different subset of light-emitting Si NCs in EL and PL. A model classifying Si NCs into connected NCs and isolated NCs is proposed. Atom probe tomography is employed to visualize the existence of isolated NCs and connected NCs. This model has been further studied using temperature dependent EL and PL, where a blue-shift of peak energy is observed as the temperature is increased. The blue-shift is attributed to the temperature dependent transport between the two subsets of NCs and the quenching of the PL emission from the connected NCs at higher temperatures.

  19. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    SciTech Connect

    Savanier, Marc Kumar, Ranjeet; Mookherjea, Shayan

    2015-09-28

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies, since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.

  20. Highly transparent front electrodes with metal fingers for p-i-n thin-film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Moulin, Etienne; Müller, Thomas Christian Mathias; Warzechac, Marek; Hoffmann, Andre; Paetzold, Ulrich Wilhelm; Aeberhard, Urs

    2015-03-01

    The optical and electrical properties of transparent conductive oxides (TCOs), traditionally used in thin-film silicon (TF-Si) solar cells as front-electrode materials, are interlinked, such that an increase in TCO transparency is generally achieved at the cost of reduced lateral conductance. Combining a highly transparent TCO front electrode of moderate conductance with metal fingers to support charge collection is a well-established technique in wafer-based technologies or for TF-Si solar cells in the substrate (n-i-p) configuration. Here, we extend this concept to TF-Si solar cells in the superstrate (p-i-n) configuration. The metal fingers are used in conjunction with a millimeter-scale textured foil, attached to the glass superstrate, which provides an antireflective and retroreflective effect; the latter effect mitigates the shadowing losses induced by the metal fingers. As a result, a substantial increase in power conversion efficiency, from 8.7% to 9.1%, is achieved for 1-μm-thick microcrystalline silicon solar cells deposited on a highly transparent thermally treated aluminum-doped zinc oxide layer combined with silver fingers, compared to cells deposited on a state-of-the-art zinc oxide layer.

  1. Influence of bilayer resist processing on p-i-n OLEDs: towards multicolor photolithographic structuring of organic displays

    NASA Astrophysics Data System (ADS)

    Krotkus, Simonas; Nehm, Frederik; Janneck, Robby; Kalkura, Shrujan; Zakhidov, Alex A.; Schober, Matthias; Hild, Olaf R.; Kasemann, Daniel; Hofmann, Simone; Leo, Karl; Reineke, Sebastian

    2015-03-01

    Recently, bilayer resist processing combined with development in hydrofluoroether (HFE) solvents has been shown to enable single color structuring of vacuum-deposited state-of-the-art organic light-emitting diodes (OLED). In this work, we focus on further steps required to achieve multicolor structuring of p-i-n OLEDs using a bilayer resist approach. We show that the green phosphorescent OLED stack is undamaged after lift-off in HFEs, which is a necessary step in order to achieve RGB pixel array structured by means of photolithography. Furthermore, we investigate the influence of both, double resist processing on red OLEDs and exposure of the devices to ambient conditions, on the basis of the electrical, optical and lifetime parameters of the devices. Additionally, water vapor transmission rates of single and bilayer system are evaluated with thin Ca film conductance test. We conclude that diffusion of propylene glycol methyl ether acetate (PGMEA) through the fluoropolymer film is the main mechanism behind OLED degradation observed after bilayer processing.

  2. Operation and test of hybridized silicon p-i-n arrays using open-source array control hardware and software

    NASA Astrophysics Data System (ADS)

    Moore, Andrew C.; Ninkov, Zoran; Burley, Gregory S.; Forrest, William J.; McMurtry, Craig W.; Avery, Lars E.

    2003-05-01

    A system for controlling and testing high-resolution non-destructive astronomical imagers was constructed using open-source components, both hardware and software. The open-source electronics design, originated by Carnegie Observatories (OCIW) for CCD cameras, was modified, assembled, and augmented with new circuitry which facilitates monitoring of voltages and currents. The electronics was run from Python user interface software based on a design from the University of Rochester. This new software utilized the Numarray and pyFITS modules developed at the Space Telescope Science Institute (STScI). Interfacing to the "dv" FITS image analysis package from the NASA IRTF was also implemented. Python (the STScI language of choice) was used as the primary language for systems integration, scripts for data acquisition, and scripts for data analysis. The DSP clocking software was a mixture of C and Motorola 56303 assembly. An interrupt-driven kernel-mode PCI device driver for Red Hat Linux was written in C, and used the PC processor and memory for image processing and acquisition. Two 1Κ × 1Κ Raytheon SB226-based hybridized silicon p-i-n arrays were operated and tested with the new system at temperatures as low as 10K. Signal path gain, node capacitance, well depth, dark current, and MTF measurements were made and are presented here.

  3. p-i-n heterojunctions with BiFeO3 perovskite nanoparticles and p- and n-type oxides: photovoltaic properties.

    PubMed

    Chatterjee, Soumyo; Bera, Abhijit; Pal, Amlan J

    2014-11-26

    We formed p-i-n heterojunctions based on a thin film of BiFeO3 nanoparticles. The perovskite acting as an intrinsic semiconductor was sandwiched between a p-type and an n-type oxide semiconductor as hole- and electron-collecting layer, respectively, making the heterojunction act as an all-inorganic oxide p-i-n device. We have characterized the perovskite and carrier collecting materials, such as NiO and MoO3 nanoparticles as p-type materials and ZnO nanoparticles as the n-type material, with scanning tunneling spectroscopy; from the spectrum of the density of states, we could locate the band edges to infer the nature of the active semiconductor materials. The energy level diagram of p-i-n heterojunctions showed that type-II band alignment formed at the p-i and i-n interfaces, favoring carrier separation at both of them. We have compared the photovoltaic properties of the perovskite in p-i-n heterojunctions and also in p-i and i-n junctions. From current-voltage characteristics and impedance spectroscopy, we have observed that two depletion regions were formed at the p-i and i-n interfaces of a p-i-n heterojunction. The two depletion regions operative at p-i-n heterojunctions have yielded better photovoltaic properties as compared to devices having one depletion region in the p-i or the i-n junction. The results evidenced photovoltaic devices based on all-inorganic oxide, nontoxic, and perovskite materials. PMID:25350523

  4. Analysis and Simulation of Superlattice GaN/InGaN p-i-n Solar Cells

    NASA Astrophysics Data System (ADS)

    Giannoccaro, Giovanni; Passaro, Vittorio M. N.

    Indium gallium nitride (InGaN) is becoming a promising semiconductor material for fabrication of solar cells due to its high absorption coefficient (about 105 cm-1) and tunable (by its In content) direct band-gap, from 0.71 eV (EInN) to 3.43 eV (EGaN). Solar cells based on structures with variable In content should show a reduction of thermalization losses, absorbing almost the whole of solar spectrum. Unfortunately, these advantages are partially lost and InGaN solar cells performance reduced due to technological issues (low quality of InGaN layer growth on GaN substrate) and wurtzite nature of InGaN semiconductor (spontaneous and piezoelectric polarizations), in particular in case of In-rich ternary alloy. This paper is focused on the parametric analysis and simulation of an intermediate band (IB) superlattice GaN/InGaN p-i-n solar cell on GaN quasi-bulk substrate. Photovoltaic device performances are investigated and simulated as a function of both In concentration in GaN/InGaN quantum wells (QWs) and QW number. For a superlattice with 28 QWs, an efficiency of 1.05 % with a short-circuit current density of 1.193 mA/cm2 has been achieved. Furthermore, some considerations on the possibility to obtain a more efficient InGaN solar cell with a wider absorption spectrum using InN quantum dots (QDs) in a photovoltaic device structure are also derived.

  5. Low resistivity lateral P-I-N junction formed by Ni-InGaAsP alloy for carrier injection InGaAsP photonic devices

    NASA Astrophysics Data System (ADS)

    Park, Jin-Kwon; Takenaka, Mitsuru; Takagi, Shinichi

    2016-04-01

    In this study, we investigate low-resistivity InGaAsP lateral P-I-N junctions using Ni-InGaAsP alloy in conjunction with Zn diffusion. It is found that Ni-InGaAsP alloy is formed via a direct reaction between Ni and InGaAsP after annealing at more than 300 °C. The Ni-InGaAsP preserves the initial Schottky junction properties between Ni and InGaAsP, and thus exhibits an ohmic contact for n-InGaAsP and a Schottky contact for p-InGaAsP. Hence, the Ni-InGaAsP alloy can be used instead of the Si ion implantation process to form the P-I-N junction. The Ni-InGaAsP alloy exhibits significantly lower contact resistance and sheet resistance than Si implanted n+-InGaAsP. The InGaAsP lateral P-I-N junction formed with the Ni-InGaAsP alloy and Zn diffusion shows approximately 10 times lower access resistance than the n+-InGaAsP junction. Thus, we successfully achieve large on-current in the lateral P-I-N junction with the Ni-InGaAsP alloy. The fabrication procedure of the lateral P-I-N junction using the Ni-InGaAsP alloy is promising for carrier-injection photonic devices on the III-V CMOS photonics platform.

  6. A final report for: Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    SciTech Connect

    Vernon, Stanley M.

    1999-04-01

    This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10{sup -12} amps at -1 V on a 3mm x 3mm diode, or a density of 1.1 x 10{sup -11} amps cm{sup -2}, with many of the diode structures tested having nearly similar results. The PIN diodes were significantly better than the Schottky barrier device, which had six orders of magnitude higher dark current. Diodes were characterized in terms of their current-mode response to 5.5 MeV alpha particles from 241-Americium. These radiation-induced currents were as high as 9.78 x 10{sup -7} A cm{sup -1} on a PIN device with an Al{sub x}Ga{sub 1-x}As BSF. Simple PIN diodes had currents as high as 2.44 x 10{sup -7} A cm{sup -2}, with thicker undoped layers showing better sensitivity. Boron coatings were applied, and response to neutrons tested at University of Michigan by Dr. Doug McGregor. Devices with PIN and Schottky barrier designs showed neutron detection efficiencies as high as 2% on 5 {micro}m thick devices, with no need for external bias voltages. PIN diodes showed higher breakdown voltages and lower noise

  7. Design Issues of GaAs and AlGaAs Delta-Doped p-i-n Quantum-Well APD's

    NASA Technical Reports Server (NTRS)

    Wang, Yang

    1994-01-01

    We examine the basic design issues in the optimization of GaAs delta-doped and AlGAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control or the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed.

  8. Texture etched ZnO:Al films as front contact and back reflector in amorphous silicon p-i-n and n-i-p solar cells

    SciTech Connect

    Rech, B.; Wieder, S.; Beneking, C.; Loeffl, A.; Kluth, O.; Reetz, W.; Wagner, H.

    1997-12-31

    This paper treats the use of texture etched ZnO:Al films in amorphous silicon solar cells. Chemically textured ZnO:Al films were implemented as a front TCO in p-i-n (superstrate) and n-i-p (substrate) solar cells, and in combination with Ag as a textured back reflector in n-i-p (substrate) solar cells. These cells exhibit excellent optical and light-trapping properties demonstrated by high short-circuit current densities. Adapted microcrystalline p-layers solve the ZnO/p-contact problem and thereby provide high fill factors and open-circuit voltages. The initial efficiencies so far obtained are close to 10% for p-i-n and 8% for n-i-p solar cells.

  9. Near-infrared electroluminescence and photo detection in InGaAs p-i-n microdisks grown by selective area growth on silicon

    NASA Astrophysics Data System (ADS)

    Kjellman, Jon Øyvind; Sugiyama, Masakazu; Nakano, Yoshiaki

    2014-06-01

    Microselective-area growth of p-i-n InGaAs disks on (111) silicon by metalorganic chemical vapor deposition is a promising technology for III/V-on-Si integration. As a proof-of-concept, room-temperature electroluminescence is reported from ensembles of p-i-n InGaAs-on-Si micro-disks. The observed spectrum shows peak luminescence at 1.78 μm with a local maxima at 1.65 μm. The disks are also shown to generate a measurable photo current when illuminated by infrared light with less energy than the silicon bandgap energy. This makes these InGaAs-on-Si disks a promising technology for monolithic integration of light sources and detectors with silicon photonics and complementary metal-oxide-semiconductor electronics for optical communication, sensing, and imaging.

  10. Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique.

    PubMed

    Dong, Yuan; Wang, Wei; Lei, Dian; Gong, Xiao; Zhou, Qian; Lee, Shuh Ying; Loke, Wan Khai; Yoon, Soon-Fatt; Tok, Eng Soon; Liang, Gengchiau; Yeo, Yee-Chia

    2015-07-13

    We demonstrate that a complementary metal-oxide-semiconductor (CMOS) compatible silicon (Si) surface passivation technique effectively suppress the dark current originating from the mesa sidewall of the Ge(0.95)Sn(0.05) on Si (Ge(0.95)Sn(0.05)/Si) p-i-n photodiode. Current-voltage (I-V) characteristics show that the sidewall surface passivation technique could reduce the surface leakage current density (Jsurf) of the photodiode by ~100 times. A low dark current density (Jdark) of 0.073 A/cm(2) at a bias voltage of -1 V is achieved, which is among the lowest reported values for Ge(1-x)Sn(x)/Si p-i-n photodiodes. Temperature-dependent I-V measurement is performed for the Si-passivated and non-passivated photodiodes, from which the activation energies of dark current are extracted to be 0.304 eV and 0.142 eV, respectively. In addition, the optical responsivity of the Ge(0.95)Sn(0.05)/Si p-i-n photodiodes to light signals with wavelengths ranging from 1510 nm to 1877 nm is reported. PMID:26191919

  11. On the propensity of guiding surface-plasmon-polariton waves by the back-contact of an amorphous silicon p-i-n solar cell

    NASA Astrophysics Data System (ADS)

    Atalla, Mahmoud R. M.; Suliman, Samia A.

    2015-04-01

    The effect of varying the n-layer on the propensity of guiding surface-plasmon-polariton (SPP) waves by the back-contact of a p-i-n solar cell was studied theoretically. The i-layer was assumed to consist of an a-Si1-xGex:H homogeneous layer of bandgap energy 1.3 eV. To determine the SPP waves that can propagate at the metal/multilayer material interface, a canonical boundary-value problem comprising periodically repeated p-i-n semiconductor layers partnering a homogeneous metal was solved for four different n-layers. The canonical problem was formulated to predict both of the TM- and TE-polarized SPP waves that can be guided by the interface. It was found that the configurations that have an amorphous silicon layer partnering the metal have equivalent propensity for guiding TM- and TE-polarized SPP waves by the planar metal/multilayer material interface, although their phase speeds, e-folding distances, and localization are slightly altered. On the other hand, the configuration that has an aluminum zinc oxide partnering the metal has significantly reduced propensity for guiding TE-polarized SPP waves. To examine the excitability of the SPP waves predicted from the canonical problem, one of the considered configurations is incorporated in a practical grating-coupled configuration. Oblique incidence was assumed, and multiple SPP waves were successfully excited. The total absorptance of the p-i-n solar cell shows enhancement at the SPP wave excitation wavelengths.

  12. Effect of Longitudinal Optical Phonon--Plasmon Coupling on the Transient Self-Consistent Field in GaAs p--i--n Diodes

    NASA Astrophysics Data System (ADS)

    Thao, Dinh Nhu; The, Nguyen Phuoc

    2013-10-01

    The effect of longitudinal optical (LO) phonon--coherent plasmon coupling on the transient self-consistent field and then on frequency spectra of collective oscillations in GaAs p--i--n diodes without a biased field is investigated by the self-consistent ensemble Monte Carlo method. The frequency spectra of collective oscillations in the diodes show that there are two new strong peaks in the terahertz range when the coupling is taken into account. These peaks replace the coupled phonon--plasmon peaks in the bulk semiconductor.

  13. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Sellers, D. G.; Chen, E. Y.; Polly, S. J.; Hubbard, S. M.; Doty, M. F.

    2016-05-01

    We investigate the effect of doping on the mechanisms of carrier escape from intermediate states in delta-doped InAs/GaAs intermediate band solar cells. The intermediate states arise from InAs quantum dots embedded in a GaAs p-i-n junction cell. We find that doping the sample increases the number of excited-state carriers participating in a cycle of trapping and carrier escape via thermal, optical, and tunneling mechanisms. However, we find that the efficiency of the optically-driven carrier escape mechanism is independent of doping and remains small.

  14. Efficient gate control of spin-valve signals and Hanle signals in GaAs channel with p-i-n junction-type back-gate structure

    NASA Astrophysics Data System (ADS)

    Miyakawa, Takumi; Akiho, Takafumi; Ebina, Yuya; Yamamoto, Masafumi; Uemura, Tetsuya

    2016-02-01

    Efficient gate control of spin-valve signals and Hanle signals was achieved in a GaAs channel with a p-i-n back-gate structure. Experiments showed that the amplitude of the spin-valve signal (ΔVNL) under constant-injection-current conditions increased for a cross nonlocal geometry when the channel was depleted by the gate voltage (VG). In contrast, the VG dependence of ΔVNL for a nonlocal geometry was complicated. The gate modulation efficiency of spin signals was approximately 50 times that with a graphene or Si channel.

  15. Characterisation of Al0.52In0.48P mesa p-i-n photodiodes for X-ray photon counting spectroscopy

    NASA Astrophysics Data System (ADS)

    Butera, S.; Lioliou, G.; Krysa, A. B.; Barnett, A. M.

    2016-07-01

    Results characterising the performance of thin (2 μm i-layer) Al0.52In0.48P p+-i-n+ mesa photodiodes for X-ray photon counting spectroscopy are reported at room temperature. Two 200 μm diameter and two 400 μm diameter Al0.52In0.48P p+-i-n+ mesa photodiodes were studied. Dark current results as a function of applied reverse bias are shown; dark current densities <3 nA/cm2 were observed at 30 V (150 kV/cm) for all the devices analysed. Capacitance measurements as a function of applied reverse bias are also reported. X-ray spectra were collected using 10 μs shaping time, with the device illuminated by an 55Fe radioisotope X-ray source. Experimental results showed that the best energy resolution (FWHM) achieved at 5.9 keV was 930 eV for the 200 μm Al0.52In0.48P diameter devices, when reverse biased at 15 V. System noise analysis was also carried out, and the different noise contributions were computed.

  16. Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application

    NASA Astrophysics Data System (ADS)

    Yang, Zhi; Wang, Minqiang; Shukla, Sudhanshu; Zhu, Yue; Deng, Jianping; Ge, Hu; Wang, Xingzhi; Xiong, Qihua

    2015-06-01

    A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications.

  17. Si Waveguide-Integrated Metal-Semiconductor-Metal and p-i-n-Type Ge Photodiodes Using Si-Capping Layer

    NASA Astrophysics Data System (ADS)

    Fujikata, Junichi; Miura, Makoto; Noguchi, Masataka; Okamoto, Daisuke; Horikawa, Tsuyoshi; Arakawa, Yasuhiko

    2013-04-01

    We studied Si waveguide-integrated metal-semiconductor-metal (MSM) and p-i-n-type Ge photodiodes (Ge-PDs), using a Si-capping layer. As for an MSM Ge-PD, the Schottky barrier height was increased up to 0.44 V by applying a 8-20 nm Si-capping layer, and a very low dark current density of approximately 0.4 nA/µm2 was achieved with a high responsivity of 0.8 A/W. In addition, a small electrode spacing of 1 µm realized high-speed photodetection of 20 Gbps. As for a p-i-n-type Ge-PD, by applying a 10-20 nm Si capping layer, the contact resistance between a metal electrode of Ti/TiN/Al and n+-Si capping layer was successfully reduced to 1×10-5 Ω.cm2. A 45 GHz bandwidth was obtained with a low dark current density of 0.8 nA/µm2. Moreover, a more than 20 GHz bandwidth was achieved with zero-bias voltage. In the case of zero-bias voltage operation, a 3 dB bandwidth was a little affected by input power, which would originate from the photocarrier screening effect on the built-in electric field.

  18. Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application

    PubMed Central

    Yang, Zhi; Wang, Minqiang; Shukla, Sudhanshu; Zhu, Yue; Deng, Jianping; Ge, Hu; Wang, Xingzhi; Xiong, Qihua

    2015-01-01

    A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications. PMID:26077658

  19. Development of high temperature diffusion technology for edge termination and switching behavior improvement of silicon carbide p-i-n diodes

    NASA Astrophysics Data System (ADS)

    Bolotnikov, Alexander V.

    forward voltage drop (3.3 V at 100 A/cm2) and high blocking voltage (more than 2500 V). A fabrication technology of p-i-n diodes with reduced switching losses through the incorporation of deep recombination centers via diffusion of boron was developed. The improvement of reverse recovery characteristic is attributed to the effect of localized lifetime control by recombination centers created by diffused boron. It is demonstrated that p-i-n diodes produced by high temperature diffusion exhibit better switching capability compared to epi-grown p-i-n diodes. The improved behavior is attributed to the reduced lifetime region created by the diffused boron layer. The good performance of SiC devices fabricated with diffusion implementation confirmed the viability of this process.

  20. High-efficiency p-i-n superstrate amorphous Si solar cells on SiO x periodic arrays of three-dimensional microstructure prepared by soft imprinting

    NASA Astrophysics Data System (ADS)

    Niikura, Chisato; Chowdhury, Amartya; Janthong, Bancha; Sichanugrist, Porponth; Konagai, Makoto

    2016-04-01

    Efficient amorphous Si thin-film solar cells in a p-i-n superstrate configuration with a high initial conversion efficiency of 10.3% were successfully fabricated on periodically three-dimensional (3D) micropatterned SiO x /glass substrates prepared by soft imprinting. Conformal film deposition on a 3D microstructure was realized owing to the shape of our newly designed 3D pattern and the triode plasma-enhanced CVD technique, which enables the selective transport of favorable film precursors to the substrate surface. The nanoscale surface texture of the front transparent conductive oxide layer was found to be crucial for optical confinement, unexceptionally for amorphous Si solar cells on a 3D microstructure, which results in an improved short-circuit current density.

  1. Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes

    NASA Astrophysics Data System (ADS)

    Megherbi, M. L.; Pezzimenti, F.; Dehimi, L.; Rao, S.; Della Corte, F. G.

    2015-07-01

    In this work different experimental current-voltage behaviours of several Al implanted 4H-SiC p-i-n diodes are investigated by means of numerical simulations in a wide range of currents and temperatures. Some devices for which recombination and tunneling are the dominant current processes at all biases are classified as "leaky" diodes. The well behaved diodes, instead, show good rectifying characteristics with a current conduction due to tunneling below 1.7 V, recombination between 1.7 V and 2.5 V, and diffusion processes above 2.5 V. At higher current regimes, a series resistance in excess of 1 mΩ cm2 becomes the main current limiting factor. Depending on the relative weight between the contact resistances and the internal diode resistance, different temperature dependencies of the current are obtained. A good agreement between numerical and measured data is achieved employing temperature-dependent carrier lifetime and mobility as fitting parameters.

  2. The open circuit voltage in amorphous silicon p-i-n solar cells and its relationship to material, device and dark diode parameters

    NASA Astrophysics Data System (ADS)

    Dutta, U.; Chatterjee, P.

    2004-08-01

    We review the sensitivity of the open-circuit voltage (Voc) to material, device and dark diode parameters, and try to assess the possibilities of improving this quantity in hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells, having a wide band-gap emitter layer. We find that parameters that affect Voc can broadly be classified into two categories: those that alter the built-in potential (Vbi) appreciably, and those that produce small or no change in Vbi, but can still alter Voc by changing the dark recombination current in the intrinsic absorber or the interfaces. The study is carried out using an electrical-optical model based on the solution of the Poisson's and the continuity equations. In agreement with existing work, we find that Voc is very sensitive to all parameters that appreciably alter Vbi, viz., the transparent conducting oxide/P contact barrier height, the P layer thickness and its activation energy, although Voc is found to be more sensitive to these parameters than Vbi itself. However, we cannot correlate such changes in Voc to the dark diode parameters. On the other hand, parameters that have little effect on Vbi, but alter the dark recombination current, viz., the density of states, capture cross-sections and the Urbach edge, have only a minor influence on Voc, although these changes can qualitatively be linked to changes in the dark current. Also we find that the common belief that Voc decreases as the reverse bias generation current increases is not always true. Boron profiling of the P /I interface and its effect on Voc has also been studied. All in all our study indicates that in a-Si:H p-i-n cells under AM1.5 light, there is little scope of further improving Voc, while retaining the cell efficiency.

  3. Large Perovskite Grain Growth in Low-Temperature Solution-Processed Planar p-i-n Solar Cells by Sodium Addition.

    PubMed

    Bag, Santanu; Durstock, Michael F

    2016-03-01

    Thin-film p-i-n type planar heterojunction perovskite solar cells have the advantage of full low temperature solution processability and can, therefore, be adopted in roll-to-roll production and flexible devices. One of the main challenges with these devices, however, is the ability to finely control the film morphology during the deposition and crystallization of the perovskite layer. Processes suitable for optimization of the perovskite layer film morphology with large grains are highly desirable for reduced recombination of charge carriers. Here, we show how uniform thin films with micron size perovskite grains can be made through the use of a controlled amount of sodium ions in the precursor solution. Large micrometer-size CH3NH3PbI3 perovskite grains are formed during low-temperature thin-film growth by adding sodium ions to the PbI2 precursor solution in a two-step interdiffusion process. By adjusting additive concentration, film morphologies were optimized and the fabricated p-i-n planar perovskite-PCBM solar cells showed improved power conversion efficiences (an average of 3-4% absolute efficiency enhancement) compared to the nonsodium based devices. Overall, the additive enhanced grain growth process helped to reach a high 14.2% solar cell device efficiency with low hysteresis. This method of grain growth is quite general and provides a facile way to fabricate large-grained CH3NH3PbI3 on any arbitrary surface by an all solution-processed route. PMID:26862869

  4. Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon p-i-n waveguiding device.

    PubMed

    Della Corte, Francesco G; Rao, Sandro; Coppola, Giuseppe; Summonte, Caterina

    2011-02-14

    Hydrogenated amorphous silicon (a-Si:H) has been already considered for the objective of passive optical elements, like waveguides and ring resonators, within photonic integrated circuits at λ = 1.55 μm. However the study of its electro-optical properties is still at an early stage, therefore this semiconductor in practice is not considered for light modulation as yet. We demonstrated, for the first time, effective electro-optical modulation in a reverse biased a-Si:H p-i-n waveguiding structure. In particular, phase modulation was studied in a waveguide integrated Fabry-Perot resonator in which the V(π)⋅L(π) product was determined to be 63 V⋅cm. Characteristic switch-on and switch-off times of 14 ns were measured. The device employed a wider gap amorphous silicon carbide 
(a-SiC:H) film for the lower cladding layer instead of silicon oxide. In this way the highest temperature involved in the fabrication process was 170°C, which ensured the desired technological compatibility with CMOS processes. PMID:21369117

  5. High performance planar p-i-n perovskite solar cells with crown-ether functionalized fullerene and LiF as double cathode buffer layers

    NASA Astrophysics Data System (ADS)

    Liu, Xiaodong; Lei, Ming; Zhou, Yi; Song, Bo; Li, Yongfang

    2015-08-01

    Double cathode buffer layers (CBLs) composed of fullerene derivative functionalized with a crown-ether end group in its side chain (denoted as PCBC) and a LiF layer were introduced between the PCBM acceptor layer and the top cathode in planar p-i-n perovskite solar cells (pero-SCs) based on CH3NH3PbI3-XClX. The devices with the PCBC/LiF double CBLs showed significant improvements in power conversion efficiency (PCE) and long-term stability when compared to the device with LiF single CBL. Through optimizing the spin-coating speed of PCBC, a maximum PCE of 15.53% has been achieved, which is approximately 15% higher than that of the device with single LiF CBL. The remarkable improvement in PCE can be attributed to the formation of a better ohmic contact in the CBL between PCBC and LiF/Al electrode arising from the dipole moment of PCBC, leading to the enhanced fill factor and short-circuit current density (Jsc). Besides the PCE, the long-term stability of the devices with PCBC interlayer is also superior to that of the device with LiF single CBL, which is due to the more effective protection for the perovskite/PCBM interface.

  6. Dependence on the incident light power of the internal electric fields in a GaAs p-i-n solar cell according to bright photoreflectance spectroscopy

    NASA Astrophysics Data System (ADS)

    Jo, Hyun-Jun; Mun, Young Hee; Kim, Jong Su; Lee, Sang Jun

    2016-07-01

    Bright photoreflectance (BPR) spectroscopy at room temperature is used to examine the internal electric fields in a GaAs p-i-n solar cell for their dependence on the incident light power. Electric fields are observed at 30 µW and 100 µW of incident light. With increasing power, the strengths of the two electric fields are reduced due to the photovoltage effect. The electric field observed at 30 µW is assigned to the p-i interface, which is close to the surface. The other electric field is due to the i-n interface because the incident light penetrates deeper as the light power is increased. The electric field strength of 35.6 kV/cm at the p-i interface is lower than that of 42.9 kV/cm at the i-n interface at 500 µW of light power because the photovoltage effect is proportional to the number of photo-generated carriers, which is reduced as the distance from the surface increases. When the incident light power is similar to the excitation beam power, the electric fields at the p-i interface are saturated.

  7. Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

    NASA Astrophysics Data System (ADS)

    Brouzet, V.; Salem, B.; Periwal, P.; Rosaz, G.; Baron, T.; Bassani, F.; Gentile, P.; Ghibaudo, G.

    2015-11-01

    In this paper, we present the fabrication and electrical characterization of a MOS gated diode based on axially doped silicon nanowire (NW) p-i-n junctions. These nanowires are grown by chemical vapour deposition (CVD) using the vapour-liquid-solid (VLS) mechanism. NWs have a length of about 7 \\upmu {m} with 3 \\upmu {m} of doped regions (p-type and n-type) and 1 \\upmu {m} of intrinsic region. The gate stack is composed of 15 nm of hafnium dioxide ({HfO}2), 80 nm of nickel and 120 nm of aluminium. At room temperature, I_{{on}} =-52 {nA}/\\upmu {m} (V_{{DS}}=-0.5 {V}, V_{{GS}}=-4 {V}), and an I_{{on}}/I_{{off}} ratio of about 104 with a very low I_{{off}} current has been obtained. Electrical measurements are carried out between 90 and 390 K, and we show that the I on current is less temperature dependent below 250 K. We also observe that the ON current is increasing between 250 and 390 K. These transfer characteristics at low and high temperature confirm the tunnelling transport mechanisms in our devices.

  8. Sn-based Ge/Ge0.975Sn0.025/Ge p-i-n photodetector operated with back-side illumination

    NASA Astrophysics Data System (ADS)

    Chang, C.; Li, H.; Huang, S. H.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2016-04-01

    We report an investigation of a GeSn-based p-i-n photodetector grown on a Ge wafer that collects light signal from the back of the wafer. Temperature dependent absorption measurements performed over a wide temperature range (300 K down to 25 K) show that (a) absorption starts at the indirect bandgap of the active GeSn layer and continues up to the direct bandgap of the Ge wafer, and (b) the peak responsivity increases rapidly at first with decreasing temperature, then increases more slowly, followed by a decrease at the lower temperatures. The maximum responsivity happens at 125 K, which can easily be achieved with the use of liquid nitrogen. The temperature dependence of the photocurrent is analyzed by taking into consideration of the temperature dependence of the electron and hole mobility in the active layer, and the analysis result is in reasonable agreement with the data in the temperature regime where the rapid increase occurs. This investigation demonstrates the feasibility of a GeSn-based photodiode that can be operated with back-side illumination for applications in image sensing systems.

  9. Numerical simulation of the effect of the free carrier motilities on light-soaked a-Si:H p-i-n solar cell

    NASA Astrophysics Data System (ADS)

    Ayat, L.; Bouhdjar, A. F.; Meftah, AF.; Sengouga, N.

    2015-07-01

    Using a previous model, which was developed to describe the light-induced creation of the defect density in the a-Si:H gap states, we present in this work a computer simulation of the a-Si:H p-i-n solar cell behavior under continuous illumination. We have considered the simple case of a monochromatic light beam nonuniformly absorbed. As a consequence of this light-absorption profile, the increase of the dangling bond density is assumed to be inhomogeneous over the intrinsic layer (i-layer). We investigate the internal variable profiles during illumination to understand in more detail the changes resulting from the light-induced degradation effect. Changes in the cell external parameters including the open circuit voltage, Voc, the short circuit current density, Jsc, the fill factor, FF, and the maximum power density, Pmax, are also presented. This shows, in addition, the free carrier mobility influence. The obtained results show that Voc seems to be the less affected parameter by the light-induced increase of the dangling bond density. Moreover, its degradation is very weak-sensitive to the free carrier mobility. Finally, the free hole mobility effect is found to be more important than that of electrons in the improvement of the solar cell performance.

  10. High performance planar p-i-n perovskite solar cells with crown-ether functionalized fullerene and LiF as double cathode buffer layers

    SciTech Connect

    Liu, Xiaodong; Zhou, Yi E-mail: songbo@suda.edu.cn Song, Bo E-mail: songbo@suda.edu.cn; Lei, Ming; Li, Yongfang E-mail: songbo@suda.edu.cn

    2015-08-10

    Double cathode buffer layers (CBLs) composed of fullerene derivative functionalized with a crown-ether end group in its side chain (denoted as PCBC) and a LiF layer were introduced between the PCBM acceptor layer and the top cathode in planar p-i-n perovskite solar cells (pero-SCs) based on CH{sub 3}NH{sub 3}PbI{sub 3−X}Cl{sub X}. The devices with the PCBC/LiF double CBLs showed significant improvements in power conversion efficiency (PCE) and long-term stability when compared to the device with LiF single CBL. Through optimizing the spin-coating speed of PCBC, a maximum PCE of 15.53% has been achieved, which is approximately 15% higher than that of the device with single LiF CBL. The remarkable improvement in PCE can be attributed to the formation of a better ohmic contact in the CBL between PCBC and LiF/Al electrode arising from the dipole moment of PCBC, leading to the enhanced fill factor and short-circuit current density (J{sub sc}). Besides the PCE, the long-term stability of the devices with PCBC interlayer is also superior to that of the device with LiF single CBL, which is due to the more effective protection for the perovskite/PCBM interface.

  11. Sensitivity evaluation of fiber optic OC-48 p-i-n transimpedance amplifier receivers using sweep-frequency modulation and intermixing diagnostics

    NASA Astrophysics Data System (ADS)

    Lin, Gong-Ru; Liao, Yu-Sheng

    2005-04-01

    The sensitivity of SONET p-i-n photodiode receivers with transimpedance amplifiers (PIN-TIA) from OC-3 to OC-48 data rates, measured by using a standard bit-error-rate tester (BERT) and a novel sweep-frequency-modulation/intermixing (SMIM) technique, are compared. A threshold intermixed voltage below 15.8 mV obtained by the SMIM method corresponding to the sensitivity of the PIN-TIA receiver beyond -32 dBm determined by BERT for the SONET OC-48 PIN-TIA receivers with a required BER of better than 10-10 is reported. The analysis interprets that the intermixed voltage for improving the PIN-TIA receiver sensitivity from -31 to -33 dBm has to be increased from 12.5 to 20.4 mV. As compared to the BERT, the SMIM is a relatively simplified, fast, and low-cost technique for on-line mass-production diagnostics for measuring the sensitivity and evaluating the BER performances of PIN-TIA receivers.

  12. Measured and Simulated Dark J-V Characteristics of a-Si:H Single Junction p-i-n Solar Cells Irradiated with 40 keV Electrons

    NASA Technical Reports Server (NTRS)

    Lord, Kenneth; Woodyard, James R.

    2002-01-01

    The effect of 40 keV electron irradiation on a-Si:H p-i-n single-junction solar cells was investigated using measured and simulated dark J-V characteristics. EPRI-AMPS and PC-1D simulators were explored for use in the studies. The EPRI-AMPS simulator was employed and simulator parameters selected to produce agreement with measured J-V characteristics. Three current mechanisms were evident in the measured dark J-V characteristics after electron irradiation, namely, injection, shunting and a term of the form CV(sup m). Using a single discrete defect state level at the center of the band gap, good agreement was achieved between measured and simulated J-V characteristics in the forward-bias voltage region where the dark current density was dominated by injection. The current mechanism of the form CV(sup m) was removed by annealing for two hours at 140 C. Subsequent irradiation restored the CV(sup m) current mechanism and it was removed by a second anneal. Some evidence of the CV(sup m) term is present in device simulations with a higher level of discrete density of states located at the center of the bandgap.

  13. Solar-blind Al x Ga1- x N ( x > 0.45) p- i- n photodiodes with a polarization- p-doped emitter

    NASA Astrophysics Data System (ADS)

    Kuznetsova, N. V.; Nechaev, D. V.; Shmidt, N. M.; Karpov, S. Yu.; Rzheutskii, N. V.; Zemlyakov, V. E.; Kaibyshev, V. Kh.; Kazantsev, D. Yu.; Troshkov, S. I.; Egorkin, V. I.; Ber, B. Ya.; Lutsenko, E. V.; Ivanov, S. V.; Jmerik, V. N.

    2016-06-01

    Polarization-induced p-type doping of AlGaN layers with high aluminum content during plasmaassisted MBE growth has been studied. It is shown that a gradient of the AlN molar fraction in AlGaN (composition gradient) on a level of 0.005 nm-1 must be set in order to obtain a hole concentration of ~1018 cm-3 (measured by the C- V method) in Al x Ga1- x N:Mg ( x = 0.52-0.32) layers with dopant concentration [Mg] = 1.3 × 1018 cm-3. p- i- n photodiodes based on AlGaN heterostructures with such layers as p-emitters showed maximum photoresponsitivity in the solar-blind wavelength range (λ = 281 nm) about 35 and 48 mA/W at reverse bias voltage U = 0 and-5 V, respectively, and exhibited a dark current density of 3.9 × 10-8 A/cm2 at U =-5 V.

  14. In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Vajandar, Saumitra; Lim, Sin Leng; Dong, Yuan; D'Costa, Vijay Richard; Osipowicz, Thomas; Tok, Eng Soon; Yeo, Yee-Chia

    2016-04-01

    The in-situ Ga doping technique was used to form heavily p-type doped germanium-tin (Ge1-xSnx) layers by molecular beam epitaxy, avoiding issues such as Sn precipitation and surface segregation at high annealing temperatures that are associated with the alternative implant and anneal approach. In this way, an electrically active Ga concentration of up to ˜3.2 × 1020 cm-3 can be realized for Ge1-xSnx. The impacts of varying the Ga concentration on the crystalline quality and the mobility of p-type Ge1-xSnx were investigated. High crystalline quality Ge0.915Sn0.085 can be realized with an active Ga concentration of up to ˜1.2 × 1020 cm-3. More than 98% of the Sn atoms are located on substitutional lattice sites, although the substitutionality of Sn in p-type Ge1-xSnx decreases with an increasing Ga concentration. When the Ga concentration introduced is higher than 3.2 × 1020 cm-3, excess Ga atoms cannot be substitutionally incorporated, and segregation of Ga and Sn towards the surface during growth is observed. The in-situ Ga-doped Ge0.915Sn0.085 epitaxy was integrated in a Ge0.915Sn0.085-on-Si p-i-n (PIN) photodiode fabrication process, and well-behaved Ge0.915Sn0.085/Si PIN junction characteristics were obtained. A large forward-bias current to reverse bias current ratio of 6 × 104 and a low reverse current (dark current) of 0.24 μA were achieved at Vbias = -1 V.

  15. Effect of tunable dot charging on photoresponse spectra of GaAs p-i-n diode with InAs quantum dots

    SciTech Connect

    Shang, Xiangjun; Yu, Ying; Li, Mifeng; Wang, Lijuan; Zha, Guowei; Ni, Haiqiao; Niu, Zhichuan; Pettersson, Håkan

    2015-12-28

    Quantum dot (QD)-embedded photodiodes have demonstrated great potential for use as detectors. A modulation of QD charging opens intriguing possibilities for adaptive sensing with bias-tunable detector characteristics. Here, we report on a p-i-n GaAs photodiode with InAs QDs whose charging is tunable due to unintentional Be diffusion and trap-assisted tunneling of holes, from bias- and temperature (T)-dependent photocurrent spectroscopy. For the sub-bandgap spectra, the T-dependent relative intensities “QD-s/WL” and “WL/GaAs” (WL: wetting layer) indicate dominant tunneling under −0.9 V (trap-assisted tunneling from the top QDs) and dominant thermal escape under −0.2 ∼ 0.5 V (from the bottom QDs since the top ones are charged and inactive for optical absorption) from the QD s-state, dominant tunneling from WL, and enhanced QD charging at >190 K (related to trap level ionization). For the above-bandgap spectra, the degradation of the spectral profile (especially near the GaAs bandedge) as the bias and T tune (especially under −0.2 ∼ 0.2 V and at >190 K) can be explained well by the enhanced photoelectron capture in QDs with tunable charging. The dominant spectral profile with no degradation under 0.5 V is due to a saturated electron capture in charged QDs (i.e., charging neutralization). QD level simulation and schematic bandstructures can help one understand these effects.

  16. Multistability, ionic doping, and charge dynamics in electrosynthesized polypyrrole, polymer-nanoparticle blend nonvolatile memory, and fixed p-i-n junction polymer light-emitting electrochemical cells

    NASA Astrophysics Data System (ADS)

    Simon, Daniel Theodore

    -assembled monolayer (SAM) at the cathode-polymer interface. The addition of the SAM causes a twofold increase in quantum efficiency. Photovoltaic analysis indicates that the SAM increases both open-circuit voltage and short-circuit current. Current versus voltage data are presented which indicate that the SAM does not simply introduce an interfacial dipole layer, but rather provides a fixed doping region, and thus a more stable p-i-n structure.

  17. Measurement of the transmission magnetic circular dichroism of Ga{sub 1−x}Mn{sub x}As epilayers using a built-in p-i-n photodiode

    SciTech Connect

    He, Z. X.; Zheng, H. Z. Wang, H. L.; Zhao, J. H.

    2014-02-28

    By constructing a GaMnAs epilayer/semi-insulating In{sub 0.2}Ga{sub 0.8}As/(001) n{sup +}-GaAs substrate layer structure as a built-in p-i-n photodiode, we developed a scheme for on-chip measurements of transmission magnetic circular dichroism (T-MCD). Both the hysteresis loops in the magnetic field sweeps and the wavelength scans at saturated magnetic fields measured using the new T-MCD scheme, illustrated the same features as those previously measured on the freestanding GaMnAs thin films by conventional T-MCD. Because a large group of epitaxially grown magnetic film/semiconductor heterostructures, such as Fe, NiFe, CoFeAl, and MnGa films on semiconductor substrates, are becoming important new building blocks for semiconductor-based spin field-effect transistor, perpendicular magnetic tunnel junction (p-MTJ) and lateral MTJ devices, the new T-MCD scheme can be applied to tests of their magnetic properties by forming either p-i-n or Schottky photodiodes.

  18. Specific features of light current-voltage characteristics of p-i-n structures based on amorphous silicon in the case of the tunnel-drift mechanism of dark current transport

    SciTech Connect

    Andreev, A. A.

    2008-11-15

    Current-voltage (I-V) characteristics of p-i-n structures based on amorphous silicon ({alpha}-Si:H) with small hole diffusion lengths (shorter than the thickness of the i-layer of a p-i-n structure) have been experimentally studied with and without illumination. It is shown that forward I-V characteristics of structures of this kind can be described by a dependence inherent in diodes, with a diode ideality factor two-three times the maximum value of 2, theoretically predicted for generation-recombination currents in p-n junctions. The dark current is always substantially lower than the photocurrent in a cell biased with a voltage approximately equal to the opencircuit voltage of the photocell. Dark currents cannot contribute to the I-V characteristic under illumination. The photocurrent decreases with increasing photovoltage at a bias lower than the open-circuit voltage because of a decrease in the collection coefficient and the increasingly important role of back diffusion of electrons into the p-contact, rather than as a result of the dark injection. In the case of biases exceeding the open-circuit voltage, back diffusion becomes the predominant component of the current.

  19. Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−x In x N y As1−y /GaAs quantum well p-i-n photodiodes

    PubMed Central

    2014-01-01

    Photocurrent oscillations, observed at low temperatures in lattice-matched Ga1−x In x N y As1−y /GaAs multiple quantum well (MQW) p-i-n samples, are investigated as a function of applied bias and excitation wavelength and are modelled with the aid of semiconductor simulation software. The oscillations appear only at low temperatures and have the highest amplitude when the optical excitation energy is in resonance with the GaInNAs bandgap. They are explained in terms of electron accumulation and the formation of high-field domains in the GaInNAs QWs as a result of the disparity between the photoexcited electron and hole escape rates from the QWs. The application of the external bias results in the motion of the high-field domain towards the anode where the excess charge dissipates from the well adjacent to anode via tunnelling. PMID:24548551

  20. Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1-xInxNyAs1-y/GaAs quantum well p-i-n photodiodes.

    PubMed

    Royall, Ben; Khalil, Hagir; Mazzucato, Simone; Erol, Ayse; Balkan, Naci

    2014-01-01

    Photocurrent oscillations, observed at low temperatures in lattice-matched Ga1-xInxNyAs1-y/GaAs multiple quantum well (MQW) p-i-n samples, are investigated as a function of applied bias and excitation wavelength and are modelled with the aid of semiconductor simulation software. The oscillations appear only at low temperatures and have the highest amplitude when the optical excitation energy is in resonance with the GaInNAs bandgap. They are explained in terms of electron accumulation and the formation of high-field domains in the GaInNAs QWs as a result of the disparity between the photoexcited electron and hole escape rates from the QWs. The application of the external bias results in the motion of the high-field domain towards the anode where the excess charge dissipates from the well adjacent to anode via tunnelling. PMID:24548551

  1. Improved organic p-i-n type solar cells with n-doped fluorinated hexaazatrinaphthylene derivatives HATNA-F{sub 6} and HATNA-F{sub 12} as transparent electron transport material

    SciTech Connect

    Selzer, Franz Falkenberg, Christiane Leo, Karl Riede, Moritz; Hamburger, Manuel Baumgarten, Martin Müllen, Klaus

    2014-02-07

    We study new electron transport materials (ETM) to replace the reference material C{sub 60} in p-i-n type organic solar cells. A comprehensive material characterization is performed on two fluorinated hexaazatrinaphthylene derivatives, HATNA-F{sub 6} and HATNA-F{sub 12}, to identify the most promising material for the application in devices. We find that both HATNA derivatives are equally able to substitute C{sub 60} as ETM as they exhibit large optical energy gaps, low surface roughness, and sufficiently high electron mobilities. Furthermore, large electron conductivities of 3.5×10{sup −5} S/cm and 2.0×10{sup −4} S/cm are achieved by n-doping with 4 wt. % W{sub 2}(hpp){sub 4}. HOMO levels of (7.72 ± 0.05) eV and (7.73 ± 0.05) eV are measured by ultraviolet photoelectron spectroscopy and subsequently used for estimating LUMO values of (4.2 ± 0.8) eV and (4.3 ± 0.8) eV. Both fluorinated HATNA derivatives are successfully applied in p-i-n type solar cells. Compared to identical reference devices comprising the standard material C{sub 60}, the power conversion efficiency (PCE) can be increased from 2.1 % to 2.4 % by using the new fluorinated HATNA derivatives.

  2. Reliability of vapor-grown planar In0.53Ga0.47As/InP p-i-n photodiodes with very high failure activation energy

    NASA Astrophysics Data System (ADS)

    Forrest, Stephen R.; Ban, V. S.; Gasparian, G.; Gay, Daniel; Olsen, Gregory H.

    1988-05-01

    The mean time to failure (MTTF) was measured for a statistically significant population of planar In0.53Ga0.47As/InP heterostructure p-i-n photodetectors at several elevated temperatures. The probability for failure is fit to a log-normal distribution, with the result that the width of the failure distribution is sigma = 0.55 +/- 0.2, and is roughly independent of temperature. From the temperature dependence of MTTF data, it is found that the failure mechanism is thermally activated, with an activation energy of less than 1.5 +/- 0.2 eV measured in the temperature range of 170-250 C. This extrapolates to a MTTF of less than 0.1 failure in 109h (or less than 0.1 FIT) at 70 C, indicating that such devices are useful for systems requiring extremely high reliable components, even if operated at elevated temperatures for significant time periods. This activation energy is the highest value reported for In0.53Ga0.47As/InP photodetectors, and is significantly higher than the energies of 0.85 eV often suspected for these devices.

  3. 10Gbps operation of a metamorphic InGaP buffered In 0.53Ga 0.47As p-i-n photodetector grown on GaAs substrate

    NASA Astrophysics Data System (ADS)

    Liao, Yu-Sheng; Lin, Gong-Ru; Lin, Chi-Kuan; Chu, Yi-Shiang; Kuo, Hao-Chung; Feng, Milton

    2005-11-01

    A novel top-illuminated In 0.53Ga 0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded metamorphic In xGa 1-xP (x graded from 0.49 to 1) buffer layer has been demonstrated on the SONET OC-192 receiving performance. With a cost-efficient TO-46 package, the MM-PINPD at data rate of 10 Gbit/s can be obtained at minimum optical power of -19.5 dBm. At wavelength of 1550nm, the dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4×10 -15 W/Hz 1/2, and 8 GHz, respectively. All the parameters are comparable to those of similar devices made on InP substrate or other InGaAs products epitaxially grown on an InGaAlAs buffered GaAs substrate. The performances of the MM-PINPD on GaAs are analyzed by impulse injecting of 1.2-ps pulse-train, eye pattern at 10Gbps, and frequency response from VNA.

  4. Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector

    NASA Astrophysics Data System (ADS)

    Huang, Jianliang; Ma, Wenquan; Zhang, Yanhua; Cao, Yulian; Liu, Ke; Huang, Wenjun; Lu, Shulong

    2015-06-01

    We show that the energy band structure of the Ohmic contact layers can have a big impact on the response feature of very long wavelength (VLW) detection using p-i-n type II superlattices (SLs). It is found that, if the p and n Ohmic contact layers are comprised of mid wavelength (MW) InAs/GaSb SLs, the photoresponse of the detector is dominated by a short wavelength band with the 50% cutoff wavelength at 2.67 μm, while the designed VLW response is very weak at 0 V. With increasing the bias voltage, the designed VLW response with the 50% cutoff wavelength at 17.8 μm becomes stronger and stronger. In contrast, if the p and n Ohmic contact layers are made up of the same SLs, as those of the VLW absorber region, only a broad VLW response shows up. The response difference between the two samples is attributed to blocking of the photogenerated carriers by the energy barriers at the interfaces between the absorber and the contact layers for the sample using MW SLs as the contact layers.

  5. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

    SciTech Connect

    Kao, Kuo-Hsing; Meyer, Kristin De; Verhulst, Anne S.; Rooyackers, Rita; Douhard, Bastien; Delmotte, Joris; Bender, Hugo; Richard, Olivier; Vandervorst, Wilfried; Simoen, Eddy; Hikavyy, Andriy; Loo, Roger; Arstila, Kai; Collaert, Nadine; Thean, Aaron; Heyns, Marc M.

    2014-12-07

    Band-to-band tunneling parameters of strained indirect bandgap materials are not well-known, hampering the reliability of performance predictions of tunneling devices based on these materials. The nonlocal band-to-band tunneling model for compressively strained SiGe is calibrated based on a comparison of strained SiGe p-i-n tunneling diode measurements and doping-profile-based diode simulations. Dopant and Ge profiles of the diodes are determined by secondary ion mass spectrometry and capacitance-voltage measurements. Theoretical parameters of the band-to-band tunneling model are calculated based on strain-dependent properties such as bandgap, phonon energy, deformation-potential-based electron-phonon coupling, and hole effective masses of strained SiGe. The latter is determined with a 6-band k·p model. The calibration indicates an underestimation of the theoretical electron-phonon coupling with nearly an order of magnitude. Prospects of compressively strained SiGe tunneling transistors are made by simulations with the calibrated model.

  6. p-i-n/n-i-p type planar hybrid structure of highly efficient perovskite solar cells towards improved air stability: synthetic strategies and the role of p-type hole transport layer (HTL) and n-type electron transport layer (ETL) metal oxides.

    PubMed

    Mali, Sawanta S; Hong, Chang Kook

    2016-05-19

    There has been fast recent progress in perovskite solar cells (PSCs) towards low cost photovoltaic technology. Organometal mixed halide (MAPbX or FAPbX) perovskites are the most promising light absorbing material sandwiched between the electron transport layer (ETL) and hole transport layer (HTL). These two layers play a critical role in boosting the power conversion efficiency (PCE) and maintaining air stability. However, the device stability is a serious issue in regular as well as p-i-n inverted type perovskite solar cells. This mini-review briefly outlines the state-of-art of p-i-n/n-i-p type planar hybrid perovskite solar cells using MAPbX/FAPbX perovskite absorbing layers. Later, we will focus on recent trends, progress and further opportunities in exploring the air stable hybrid planar structure PSCs. PMID:27161123

  7. p-i-n/n-i-p type planar hybrid structure of highly efficient perovskite solar cells towards improved air stability: synthetic strategies and the role of p-type hole transport layer (HTL) and n-type electron transport layer (ETL) metal oxides

    NASA Astrophysics Data System (ADS)

    Mali, Sawanta S.; Hong, Chang Kook

    2016-05-01

    There has been fast recent progress in perovskite solar cells (PSCs) towards low cost photovoltaic technology. Organometal mixed halide (MAPbX or FAPbX) perovskites are the most promising light absorbing material sandwiched between the electron transport layer (ETL) and hole transport layer (HTL). These two layers play a critical role in boosting the power conversion efficiency (PCE) and maintaining air stability. However, the device stability is a serious issue in regular as well as p-i-n inverted type perovskite solar cells. This mini-review briefly outlines the state-of-art of p-i-n/n-i-p type planar hybrid perovskite solar cells using MAPbX/FAPbX perovskite absorbing layers. Later, we will focus on recent trends, progress and further opportunities in exploring the air stable hybrid planar structure PSCs.

  8. Commercialization of multijunction a-Si modules

    NASA Astrophysics Data System (ADS)

    Carlson, D. E.; Arya, R. R.; Chen, L.-F.; Oswald, R.; Newton, J.; Rajan, K.; Romero, R.; Willing, F.; Yang, L.

    1997-02-01

    Solarex has just completed building a plant in James City County, Virginia that has the capacity to produce 10 MW per year of multijunction amorphous silicon PV modules. The plant will start commercial production of 8.6 ft2 tandem modules in early 1997. The tandem device structure consists of two stacked p-i-n junctions, a front junction containing amorphous silicon and a back junction containing an amorphous silicon germanium alloy. All amorphous silicon alloys are deposited using plasma-enhanced chemical vapor deposition, and the large-area monolithic modules are interconnected using computerized laser scribing coupled with a machine vision system. The principle products will be monolithic modules (26″×48″) with nominal stabilized power ratings of 56, 50 and 43 peak watts. All modules will be fabricated using a glass-EVA-glass encapsulation to ensure long-term reliability. These products are expected to be widely used in both remote and grid-tied applications.

  9. Commercialization of multijunction a-Si modules

    SciTech Connect

    Carlson, D.E.; Arya, R.R.; Chen, L.; Oswald, R.; Newton, J.; Rajan, K.; Romero, R.; Willing, F.; Yang, L.

    1997-02-01

    Solarex has just completed building a plant in James City County, Virginia that has the capacity to produce 10 MW per year of multijunction amorphous silicon PV modules. The plant will start commercial production of 8.6ft{sup 2} tandem modules in early 1997. The tandem device structure consists of two stacked p-i-n junctions, a front junction containing amorphous silicon and a back junction containing an amorphous silicon germanium alloy. All amorphous silicon alloys are deposited using plasma-enhanced chemical vapor deposition, and the large-area monolithic modules are interconnected using computerized laser scribing coupled with a machine vision system. The principle products will be monolithic modules (26{double_prime}{times}48{double_prime}) with nominal stabilized power ratings of 56, 50 and 43 peak watts. All modules will be fabricated using a glass-EVA-glass encapsulation to ensure long-term reliability. These products are expected to be widely used in both remote and grid-tied applications. {copyright} {ital 1997 American Institute of Physics.}

  10. Commercial Crew

    NASA Video Gallery

    Phil McAlister delivers a presentation by the Commercial Crew (CC) study team on May 25, 2010, at the NASA Exploration Enterprise Workshop held in Galveston, TX. The purpose of this workshop was to...

  11. Space Commercialization

    NASA Technical Reports Server (NTRS)

    Martin, Gary L.

    2011-01-01

    A robust and competitive commercial space sector is vital to continued progress in space. The United States is committed to encouraging and facilitating the growth of a U.S. commercial space sector that supports U.S. needs, is globally competitive, and advances U.S. leadership in the generation of new markets and innovation-driven entrepreneurship. Energize competitive domestic industries to participate in global markets and advance the development of: satellite manufacturing; satellite-based services; space launch; terrestrial applications; and increased entrepreneurship. Purchase and use commercial space capabilities and services to the maximum practical extent Actively explore the use of inventive, nontraditional arrangements for acquiring commercial space goods and services to meet United States Government requirements, including measures such as public-private partnerships, . Refrain from conducting United States Government space activities that preclude, discourage, or compete with U.S. commercial space activities. Pursue potential opportunities for transferring routine, operational space functions to the commercial space sector where beneficial and cost-effective.

  12. Commercial applications

    NASA Technical Reports Server (NTRS)

    Togai, Masaki

    1990-01-01

    Viewgraphs on commercial applications of fuzzy logic in Japan are presented. Topics covered include: suitable application area of fuzzy theory; characteristics of fuzzy control; fuzzy closed-loop controller; Mitsubishi heavy air conditioner; predictive fuzzy control; the Sendai subway system; automatic transmission; fuzzy logic-based command system for antilock braking system; fuzzy feed-forward controller; and fuzzy auto-tuning system.

  13. Commercial Fishing.

    ERIC Educational Resources Information Center

    Florida State Dept. of Education, Tallahassee. Div. of Vocational Education.

    This document is a curriculum framework for a program in commercial fishing to be taught in Florida secondary and postsecondary institutions. This outline covers the major concepts/content of the program, which is designed to prepare students for employment in occupations with titles such as net fishers, pot fishers, line fishers, shrimp boat…

  14. Commercial Capaciflector

    NASA Technical Reports Server (NTRS)

    Vranish, John M.

    1991-01-01

    A capacitive proximity/tactile sensor with unique performance capabilities ('capaciflector' or capacitive reflector) is being developed by NASA/Goddard Space Flight Center (GSFC) for use on robots and payloads in space in the interests of safety, efficiency, and ease of operation. Specifically, this sensor will permit robots and their attached payloads to avoid collisions in space with humans and other objects and to dock these payloads in a cluttered environment. The sensor is simple, robust, and inexpensive to manufacture with obvious and recognized commercial possibilities. Accordingly, NASA/GSFC, in conjunction with industry, is embarking on an effort to 'spin' this technology off into the private sector. This effort includes prototypes aimed at commercial applications. The principles of operation of these prototypes are described along with hardware, software, modelling, and test results. The hardware description includes both the physical sensor in terms of a flexible printed circuit board and the electronic circuitry. The software description will include filtering and detection techniques. The modelling will involve finite element electric field analysis and will underline techniques used for design optimization.

  15. Commercial LANDSAT?

    NASA Astrophysics Data System (ADS)

    Private industry should assume responsibility either for the United States' land satellite (LANDSAT) system or for both the land and the weather satellite systems, recommends the Land Remote Sensing Satellite Advisory Committee. The committee (Eos, June 29, 1982, p. 553), composed of representatives from academia, industry, and government, has a working group that is evaluating the potential for commercialization of remote sensing satellites.The recommendations call for industry ownership or operation of either or both of the remote sensing systems, but only up to and including the holding of raw, unprocessed data. The National Aeronautics and Space Administration (NASA) currently operates LANDSAT but will be relinquishing its responsibility to the National Oceanic and Atmospheric Administration (NOAA) on January 31. NOAA already operates the U.S. civilian weather satellite service, which includes the NOAA-5, NOAA-6, and the Geostationary Operational Environmental (GOES) satellites (Eos, June 2, 1981, p. 522).

  16. Commercial applications

    NASA Astrophysics Data System (ADS)

    The near term (one to five year) needs of domestic and foreign commercial suppliers of radiochemicals and radiopharmaceuticals for electromagnetically separated stable isotopes are assessed. Only isotopes purchased to make products for sale and profit are considered. Radiopharmaceuticals produced from enriched stable isotopes supplied by the Calutron facility at ORNL are used in about 600,000 medical procedures each year in the United States. A temporary or permanent disruption of the supply of stable isotopes to the domestic radiopharmaceutical industry could curtail, if not eliminate, the use of such diagnostic procedures as the thallium heart scan, the gallium cancer scan, the gallium abscess scan, and the low radiation dose thyroid scan. An alternative source of enriched stable isotopes exist in the USSR. Alternative starting materials could, in theory, eventually be developed for both the thallium and gallium scans. The development of a new technology for these purposes, however, would take at least five years and would be expensive. Hence, any disruption of the supply of enriched isotopes from ORNL and the resulting unavailability of critical nuclear medicine procedures would have a dramatic negative effect on the level of health care in the United States.

  17. 42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide.

    PubMed

    Vivien, Laurent; Osmond, Johann; Fédéli, Jean-Marc; Marris-Morini, Delphine; Crozat, Paul; Damlencourt, Jean-François; Cassan, Eric; Lecunff, Y; Laval, Suzanne

    2009-04-13

    A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 microm using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 microm. A -3 dB bandwidth of 42 GHz has been measured at a 4V reverse bias with a responsivity as high as 1 A/W at the wavelength of 1.55 microm and a low dark current density of 60 mA/cm(2). At a wavelength of 1.52 microm, a responsivity of 1 A/W is obtained under -0.5 V bias. The process is fully compatible with CMOS technology. PMID:19365450

  18. Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor

    PubMed Central

    de Cesare, Giampiero; Nascetti, Augusto; Caputo, Domenico

    2015-01-01

    In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied. PMID:26016913

  19. Hybrid method of making an amorphous silicon P-I-N semiconductor device

    DOEpatents

    Moustakas, Theodore D.; Morel, Don L.; Abeles, Benjamin

    1983-10-04

    The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

  20. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOEpatents

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  1. Coplanar waveguide discontinuities for P-I-N diode switches and filter applications

    NASA Technical Reports Server (NTRS)

    Dib, N. I.; Katehi, P. B.; Ponchak, George E.; Simons, Rainee N.

    1990-01-01

    A full wave space domain integral equation (SDIE) analysis of coplanar waveguide (CPW) two port discontinuities is presented. An experimental setup to measure the S-parameters of such discontinuities is described. Experimental and theoretical results for CPW realizations of pass-band and stop-band filters are presented. The S-parameters of such structures are plotted in the frequency range 5 to 25 GHz.

  2. Imaging charge separation and carrier recombination in nanowire p-i-n junctions using ultrafast microscopy.

    PubMed

    Gabriel, Michelle M; Grumstrup, Erik M; Kirschbrown, Justin R; Pinion, Christopher W; Christesen, Joseph D; Zigler, David F; Cating, Emma E M; Cahoon, James F; Papanikolas, John M

    2014-06-11

    Silicon nanowires incorporating p-type/n-type (p-n) junctions have been introduced as basic building blocks for future nanoscale electronic components. Controlling charge flow through these doped nanostructures is central to their function, yet our understanding of this process is inferred from measurements that average over entire structures or integrate over long times. Here, we have used femtosecond pump-probe microscopy to directly image the dynamics of photogenerated charge carriers in silicon nanowires encoded with p-n junctions along the growth axis. Initially, motion is dictated by carrier-carrier interactions, resulting in diffusive spreading of the neutral electron-hole cloud. Charge separation occurs at longer times as the carrier distribution reaches the edges of the depletion region, leading to a persistent electron population in the n-type region. Time-resolved visualization of the carrier dynamics yields clear, direct information on fundamental drift, diffusion, and recombination processes in these systems, providing a powerful tool for understanding and improving materials for nanotechnology. PMID:24867088

  3. Commercial Buildings Characteristics, 1992

    SciTech Connect

    Not Available

    1994-04-29

    Commercial Buildings Characteristics 1992 presents statistics about the number, type, and size of commercial buildings in the United States as well as their energy-related characteristics. These data are collected in the Commercial Buildings Energy Consumption Survey (CBECS), a national survey of buildings in the commercial sector. The 1992 CBECS is the fifth in a series conducted since 1979 by the Energy Information Administration. Approximately 6,600 commercial buildings were surveyed, representing the characteristics and energy consumption of 4.8 million commercial buildings and 67.9 billion square feet of commercial floorspace nationwide. Overall, the amount of commercial floorspace in the United States increased an average of 2.4 percent annually between 1989 and 1992, while the number of commercial buildings increased an average of 2.0 percent annually.

  4. Thermochromism in Commercial Products

    NASA Astrophysics Data System (ADS)

    White, Mary Anne; Leblanc, Monique

    1999-09-01

    Many commercial products change color with a change of temperature. How do they do it? The processes responsible for the two major categories of commercial thermochromic coloring agents are presented, along with a description of applications of thermochromic materials.

  5. NASA commercial programs

    NASA Technical Reports Server (NTRS)

    1988-01-01

    An expanded role for the U.S. private sector in America's space future has emerged as a key national objective, and NASA's Office of Commercial Programs is providing a focus for action. The Office supports new high technology commercial space ventures, the commercial application of existing aeronautics and space technology, and expanded commercial access to available NASA capabilities and services. The progress NASA has made in carrying out its new assignment is highlighted.

  6. Commercial Radio as Communication.

    ERIC Educational Resources Information Center

    Rothenbuhler, Eric W.

    1996-01-01

    Compares the day-to-day work routines of commercial radio with the principles of a theoretical communication model. Illuminates peculiarities of the conduct of communication by commercial radio. Discusses the application of theoretical models to the evaluation of practicing institutions. Offers assessments of commercial radio deriving from…

  7. Commercial Banking Industry Survey.

    ERIC Educational Resources Information Center

    Bright Horizons Children's Centers, Cambridge, MA.

    Work and family programs are becoming increasingly important in the commercial banking industry. The objective of this survey was to collect information and prepare a commercial banking industry profile on work and family programs. Fifty-nine top American commercial banks from the Fortune 500 list were invited to participate. Twenty-two…

  8. Commercialism in Schools.

    ERIC Educational Resources Information Center

    Larson, Kirstin

    2001-01-01

    This document gives voice to concerns raised by critics and supporters of commercialism in schools and provides brief descriptions of several important resources on this topic. "Commercial Activities in School" (U.S. General Accounting Office) reports on the nature and frequency of commercial activities in public schools, as well as the laws and…

  9. COMMERCIAL FOODS, MATHEMATICS - I.

    ERIC Educational Resources Information Center

    DORNFIELD, BLANCHE E.

    THE UNDERSTANDING AND MASTERY OF FUNDAMENTAL MATHEMATICS IS A NECESSARY PART OF COMMERCIAL FOODS WORK. THIS STUDENT HANDBOOK WAS DESIGNED TO ACCOMPANY A COMMERCIAL FOODS COURSE AT THE HIGH SCHOOL LEVEL FOR STUDENTS WITH APPROPRIATE APTITUDES AND COMMERCIAL FOOD SERVICE GOALS. THE MATERIAL, TESTED IN VARIOUS INTERESTED CLASSROOMS, WAS PREPARED BY…

  10. World commercial aircraft accidents

    SciTech Connect

    Kimura, C.Y.

    1993-01-01

    This report is a compilation of all accidents world-wide involving aircraft in commercial service which resulted in the loss of the airframe or one or more fatality, or both. This information has been gathered in order to present a complete inventory of commercial aircraft accidents. Events involving military action, sabotage, terrorist bombings, hijackings, suicides, and industrial ground accidents are included within this list. Included are: accidents involving world commercial jet aircraft, world commercial turboprop aircraft, world commercial pistonprop aircraft with four or more engines and world commercial pistonprop aircraft with two or three engines from 1946 to 1992. Each accident is presented with information in the following categories: date of the accident, airline and its flight numbers, type of flight, type of aircraft, aircraft registration number, construction number/manufacturers serial number, aircraft damage, accident flight phase, accident location, number of fatalities, number of occupants, cause, remarks, or description (brief) of the accident, and finally references used. The sixth chapter presents a summary of the world commercial aircraft accidents by major aircraft class (e.g. jet, turboprop, and pistonprop) and by flight phase. The seventh chapter presents several special studies including a list of world commercial aircraft accidents for all aircraft types with 100 or more fatalities in order of decreasing number of fatalities, a list of collision accidents involving commercial aircrafts, and a list of world commercial aircraft accidents for all aircraft types involving military action, sabotage, terrorist bombings, and hijackings.

  11. Lunar Commercialization Workshop

    NASA Technical Reports Server (NTRS)

    Martin, Gary L.

    2008-01-01

    This slide presentation describes the goals and rules of the workshop on Lunar Commercialization. The goal of the workshop is to explore the viability of using public-private partnerships to open the new space frontier. The bulk of the workshop was a team competition to create a innovative business plan for the commercialization of the moon. The public private partnership concept is reviewed, and the open architecture as an infrastructure for potential external cooperation. Some possible lunar commercialization elements are reviewed.

  12. Commercial fertilizers 1991

    SciTech Connect

    Hargett, N.L.; Berry, J.T.; Montgomery, M.H.

    1991-12-01

    This document contains consumption data for commercial fertilizers in the USA for 1991. Graphical information on the consumption by class is given for the nation. State by state data for consumption of several types of commercial fertilizers are presented. Only numerical data is included.

  13. Commercialism in Intercollegiate Athletics.

    ERIC Educational Resources Information Center

    Delany, James E.

    1997-01-01

    Outlines the history of intercollegiate athletics and the evolution of commercialization in college sports, particularly through television. Argues that few Division I programs could be self-sufficient; the issue is the degree to which sports are commercialized for revenue, and the challenge to balance schools' needs, private sector interests, and…

  14. Commercialism@Schools.

    ERIC Educational Resources Information Center

    Molnar, Alex; Morales, Jennifer

    2000-01-01

    The Center for the Analysis of Commercialism in Schools found that the number of press citations from 1990 to 2000 discussing seven types of commercializing activities (program sponsorship, exclusive agreements, incentive programs, appropriation of space, sponsored educational materials, electronic marketing, privatization, and fund raising)…

  15. Technology Transfer and Commercialization

    NASA Technical Reports Server (NTRS)

    Martin, Katherine; Chapman, Diane; Giffith, Melanie; Molnar, Darwin

    2001-01-01

    During concurrent sessions for Materials and Structures for High Performance and Emissions Reduction, the UEET Intellectual Property Officer and the Technology Commercialization Specialist will discuss the UEET Technology Transfer and Commercialization goals and efforts. This will include a review of the Technology Commercialization Plan for UEET and what UEET personnel are asked to do to further the goals of the Plan. The major goal of the Plan is to define methods for how UEET assets can best be infused into industry. The National Technology Transfer Center will conduct a summary of its efforts in assessing UEET technologies in the areas of materials and emissions reduction for commercial potential. NTTC is assisting us in completing an inventory and prioritization by commercialization potential. This will result in increased exposure of UEET capabilities to the private sector. The session will include audience solicitation of additional commercializable technologies.

  16. Commercialization Assistance Program (CAP)

    SciTech Connect

    Jenny C. Servo, Ph.D.

    2004-07-12

    In order to fulfill the objective of Small Business Innovation Research Program (SBIR), the Department of Energy funds an initiative referred to as the Commercialization Assistance Program (CAP). The over-arching purpose of the CAP is to facilitate transition of the SBIR-funded technology to Phase III defined as private sector investment or receipt of non-sbir dollars to further the commercialization of the technology. Phase III also includes increased sales. This report summarizes the stages involved in the implementation of the Commercialization Assistance Program, a program which has been most successful in fulfilling its objectives.

  17. Commercial Biomedical Experiments Payload

    NASA Technical Reports Server (NTRS)

    2003-01-01

    Experiments to seek solutions for a range of biomedical issues are at the heart of several investigations that will be hosted by the Commercial Instrumentation Technology Associates (ITA), Inc. The biomedical experiments CIBX-2 payload is unique, encompassing more than 20 separate experiments including cancer research, commercial experiments, and student hands-on experiments from 10 schools as part of ITA's ongoing University Among the stars program. Here, Astronaut Story Musgrave activates the CMIX-5 (Commercial MDA ITA experiment) payload in the Space Shuttle mid deck during the STS-80 mission in 1996 which is similar to CIBX-2. The experiments are sponsored by NASA's Space Product Development Program (SPD).

  18. Commercial space launches

    NASA Astrophysics Data System (ADS)

    Robb, David W.

    1984-04-01

    While the space shuttle is expected to be the principle Space Transportation System (STS) of the United States, the Reagan Administration is moving ahead with the President's declared space policy of encouraging private sector operation of expendable launch vehicles (ELV's). With the signing of the “Commercial Space Launch Law” on October 30, the administration hopes that it has opened up the door for commercial ventures into space by streamlining regulations and coordinating applications for launches. The administration considers the development and operation of private sector ELV's as an important part of an overall U.S. space policy, complementing the space shuttle and government ELV's. The law follows by nearly a year the creation of the Office of Commercial Space Transportation at the U.S. Department of Transportation (DOT), which will coordinate applications for commercial space launches.

  19. NASA commercial programs

    NASA Technical Reports Server (NTRS)

    1990-01-01

    Highlights of NASA-sponsored and assisted commercial space activities of 1989 are presented. Industrial R and D in space, centers for the commercial development of space, and new cooperative agreements are addressed in the U.S. private sector in space section. In the building U.S. competitiveness through technology section, the following topics are presented: (1) technology utilization as a national priority; (2) an exploration of benefits; and (3) honoring Apollo-Era spinoffs. International and domestic R and D trends, and the space sector are discussed in the section on selected economic indicators. Other subjects included in this report are: (1) small business innovation; (2) budget highlights and trends; (3) commercial programs management; and (4) the commercial programs advisory committee.

  20. Technology Commercialization Program 1991

    SciTech Connect

    Not Available

    1991-11-01

    This reference compilation describes the Technology Commercialization Program of the Department of Energy, Defense Programs. The compilation consists of two sections. Section 1, Plans and Procedures, describes the plans and procedures of the Defense Programs Technology Commercialization Program. The second section, Legislation and Policy, identifies legislation and policy related to the Program. The procedures for implementing statutory and regulatory requirements are evolving with time. This document will be periodically updated to reflect changes and new material.

  1. Commodification and commercial surrogacy.

    PubMed

    Arneson, Richard J

    1992-01-01

    ... In this article I shall argue tentatively for the claim that commercial surrogacy should be legally permissible. I am more strongly convinced that a commitment to feminism should not predispose anyone against surrogacy. At least, no arguments offered so far should persuade anyone who is committed to equal rights for women and men and the dismantling of gender-based hierarchies to favor either legal prohibition or moral condemnation of commercial surrogacy. PMID:11651242

  2. ERC commercialization activities

    SciTech Connect

    1995-08-01

    The ERC family of companies is anticipating market entry of their first commercial product, a 2.8-MW power plant, in the second quarter of 1999. The present Cooperative Agreement provides for: (1) Commercialization planning and organizational development, (2) Completion of the pre-commercial DFC technology development, (3) Systems and plant design, (4) Manufacturing processes` scale-up to full-sized stack components and assemblies, (5) Upgrades to ERC`s test facility for full-sized stack testing, (6) Sub-scale testing of a DFC Stack and BOP fueled with landfill gas. This paper discusses the first item, that of preparing for commercialization. ERC`s formal commercialization program began in 1990 with the selection of the 2-MW Direct Fuel Cell power plant by the American Public Power Association (APPA) for promotion to the over 2000 municipal utilities comprising APPA`s segment of the utility sector. Since that beginning, the APPA core group expanded to become the Fuel Cell Commercialization Group (FCCG) which includes representation from all markets - utilities and other power generation equipment buyers.

  3. ERC commercialization activities

    SciTech Connect

    Maru, H.C.

    1995-12-01

    The ERC family of companies is anticipating market entry of their first commercial product, a 2.8-MR power plant, in the second quarter of 1999. The present Cooperative Agreement provides for: (1) Commercialization planning and organizational development, (2) Completion of the pre-commercial DFC technology development, (3) Systems and plant design, (4) Manufacturing processes` scale-up to full- sized stack components and assemblies, (5) Upgrades to ERC`s test facility for full-sized stack testing, and (6) Sub-scale testing of a DFC Stack and BOP fueled with landfill gas. This paper discusses the first item, that of preparing for commercialization. ERC`s formal commercialization program began in 1990 with the selection of the 2-MR Direct Fuel Cell power plant by the American Public Power Association (APPA) for promotion to the over 2000 municipal utilities comprising APPA`s segment of the utility sector. Since that beginning, the APPA core group expanded to become the Fuel Cell Commercialization Group (FCCG) which includes representation from all markets - utilities and other power generation equipment buyers.

  4. Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current

    NASA Astrophysics Data System (ADS)

    Sukrittanon, Supanee; Liu, Ren; Breeden, Michael C.; Pan, Janet L.; Jungjohann, K. L.; Tu, Charles W.; Dayeh, Shadi A.

    2016-08-01

    We report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface and in the GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. The comprehensive understanding presented in this work suggests that performance benefits of dilute nitride microwire solar cells can be achieved by further tuning of the epitaxial quality of the underlying materials.

  5. Study of the Staebler-Wronski degradation effect in a-Si:H based p-i-n solar cell

    NASA Technical Reports Server (NTRS)

    Naseem, H. A.; Brown, W. D.; Ang, S. S.

    1993-01-01

    Conversion of solar energy into electricity using environmentally safe and clean photovoltaic methods to supplement the ever increasing energy needs has been a cherished goal of many scientists and engineers around the world. Photovoltaic solar cells on the other hand, have been the power source for satellites ever since their introduction in the early sixties. For widespread terrestrial applications, however, the cost of photovoltaic systems must be reduced considerably. Much progress has been made in the recent past towards developing economically viable terrestrial systems, and the future looks highly promising. Thin film solar cells offer cost reductions mainly from their low processing cost, low material cost, and choice of low cost substrates. These are also very attractive for space applications because of their high power densities (power produced per kilogram of solar cell pay load) and high radiation resistance. Amorphous silicon based solar cells are amongst the top candidates for economically viable terrestrial and space based power generation. Despite very low federal funding during the eighties, amorphous silicon solar cell efficiencies have continually been improved - from a low 3 percent to over 13 percent now. Further improvements have been made by the use of multi-junction tandem solar cells. Efficiencies close to 15 percent have been achieved in several labs. In order to be competitive with fossil fuel generated electricity, it is believed that module efficiency of 15 percent or cell efficiency of 20 percent is required. Thus, further improvements in cell performance is imperative. One major problem that was discovered almost 15 years ago in amorphous silicon devices is the well known Staebler-Wronski Effect. Efficiency of amorphous silicon solar cells was found to degrade upon exposure to sunlight. Until now their is no consensus among the scientists on the mechanism for this degradation. Efficiency may degrade anywhere from 10 percent to almost 50 percent within the first few months of operation. In order to improve solar cell efficiencies, it is clear that the cause or causes of such degradation must be found and the processing conditions altered to minimize the loss in efficiency. This project was initiated in 1987 to investigate a possible link between metallic impurities, in particular, Ag, and this degradation. Such a link was established by one of the NASA scientists for the light induced degradation of n+/p crystalline silicon solar cells.

  6. Commercialization of NESSUS: Status

    NASA Technical Reports Server (NTRS)

    Thacker, Ben H.; Millwater, Harry R.

    1991-01-01

    A plan was initiated in 1988 to commercialize the Numerical Evaluation of Stochastic Structures Under Stress (NESSUS) probabilistic structural analysis software. The goal of the on-going commercialization effort is to begin the transfer of Probabilistic Structural Analysis Method (PSAM) developed technology into industry and to develop additional funding resources in the general area of structural reliability. The commercialization effort is summarized. The SwRI NESSUS Software System is a general purpose probabilistic finite element computer program using state of the art methods for predicting stochastic structural response due to random loads, material properties, part geometry, and boundary conditions. NESSUS can be used to assess structural reliability, to compute probability of failure, to rank the input random variables by importance, and to provide a more cost effective design than traditional methods. The goal is to develop a general probabilistic structural analysis methodology to assist in the certification of critical components in the next generation Space Shuttle Main Engine.

  7. Commercialization of biobanks.

    PubMed

    Evers, Kathinka; Forsberg, Joanna; Hansson, Mats

    2012-02-01

    Biobank policy and regulations profoundly vary between different societies. One area with profound differences in culture and tradition concerns commercialization, and the possibility of using the human body as a capital resource. In the United States there is acceptance of this possibility, whereas European law is based on principles that categorically prohibit selling parts of the human body. We suggest that questions of commercialization in the area of biobanking must be considered in relation to different ethical values, notably the principle of best possible use of collected biobank materials for the benefit of vital patient interests. PMID:24849753

  8. Commercial Biomedical Experiments

    NASA Technical Reports Server (NTRS)

    2003-01-01

    Experiments to seek solutions for a range of biomedical issues are at the heart of several investigations that will be hosted by the Commercial Instrumentation Technology Associates (ITA), Inc. Biomedical Experiments (CIBX-2) payload. CIBX-2 is unique, encompassing more than 20 separate experiments including cancer research, commercial experiments, and student hands-on experiments from 10 schools as part of ITA's ongoing University Among the Stars program. Valerie Cassanto of ITA checks the Canadian Protein Crystallization Experiment (CAPE) carried by STS-86 to Mir in 1997. The experiments are sponsored by NASA's Space Product Development Program (SPD).

  9. Commercial Fisheries Surveys

    USGS Publications Warehouse

    Fabrizio, Mary C.; Richards, R. Anne

    1996-01-01

    In this chapter, we describe methods for sampling commercial fisheries and identify factors affecting the design of sampling plans. When sampled properly, commercial fisheries can provide important information on the response of aquatic organisms to exploitation; such information can be used by management agencies to develop regulations for ensuring long-term production of the resource and long-term economic benefit. Fishery statistics are typically used to estimate abundance, mortality, recruitment, growth, and other vital characterisitcs of populations. Fishery statistics can also be used to study changes in fish community composition resulting from differential exploitation of species.

  10. Commercialization of the Internet.

    ERIC Educational Resources Information Center

    Weis, Allan H.

    1992-01-01

    Traces the growth of the Internet from its beginnings as the Defense Advanced Research Project Agency's ARPAnet. Discusses key issues facing network service providers including: acceptable use policies, liability exposure, the integration of research and production networks, the commercialization of the networks, and the need for global planning.…

  11. Commercial applications of telemedicine

    NASA Technical Reports Server (NTRS)

    Natiello, Thomas A.

    1991-01-01

    Telemedicine Systems Corporation was established in 1976 and is a private commercial supplier of telemedicine systems. These systems are various combinations of communications and diagnostic technology, designed to allow the delivery of health care services to remote facilities. The technology and the health care services are paid for by the remote facilities, such as prisons.

  12. Commercial Earth Observation

    NASA Technical Reports Server (NTRS)

    1995-01-01

    Through the Earth Observation Commercial Applications Program (EOCAP) at Stennis Space Center, Applied Analysis, Inc. developed a new tool for analyzing remotely sensed data. The Applied Analysis Spectral Analytical Process (AASAP) detects or classifies objects smaller than a pixel and removes the background. This significantly enhances the discrimination among surface features in imagery. ERDAS, Inc. offers the system as a modular addition to its ERDAS IMAGINE software package for remote sensing applications. EOCAP is a government/industry cooperative program designed to encourage commercial applications of remote sensing. Projects can run three years or more and funding is shared by NASA and the private sector participant. Through the Earth Observation Commercial Applications Program (EOCAP), Ocean and Coastal Environmental Sensing (OCENS) developed SeaStation for marine users. SeaStation is a low-cost, portable, shipboard satellite groundstation integrated with vessel catch and product monitoring software. Linked to the Global Positioning System, SeaStation provides real time relationships between vessel position and data such as sea surface temperature, weather conditions and ice edge location. This allows the user to increase fishing productivity and improve vessel safety. EOCAP is a government/industry cooperative program designed to encourage commercial applications of remote sensing. Projects can run three years or more and funding is shared by NASA and the private sector participant.

  13. Commercial and Industrial Wiring.

    ERIC Educational Resources Information Center

    Kaltwasser, Stan; Flowers, Gary

    This module is the third in a series of three wiring publications, includes additional technical knowledge and applications required for job entry in the commercial and industrial wiring trade. The module contains 15 instructional units that cover the following topics: blueprint reading and load calculations; tools and equipment; service;…

  14. Commercial Baking. Final Report.

    ERIC Educational Resources Information Center

    Booth, Nancy

    A project filmed three commercial baking videotapes for use by secondary and adult students in food service programs. The three topics were basic dinner rolls, bread making, and hard breads and rolls. Quick-rise dough recipes were developed, written down, and explained for use with the videotapes. A pretest, posttest, and student guide were…

  15. Commercial Crew Medical Ops

    NASA Technical Reports Server (NTRS)

    Heinbaugh, Randall; Cole, Richard

    2016-01-01

    Provide commercial partners with: center insight into NASA spaceflight medical experience center; information relative to both nominal and emergency care of the astronaut crew at landing site center; a basis for developing and sharing expertise in space medical factors associated with returning crew.

  16. Commercializing Biological Control

    ERIC Educational Resources Information Center

    LeLeu, K. L.; Young, M. A.

    1973-01-01

    Describes the only commercial establishment involved in biological control in Australia. The wasp Aphitis melinus, which parasitizes the insect Red Scale, is bred in large numbers and released in the citrus groves where Red Scale is causing damage to the fruit. (JR)

  17. Commercial Carpentry: Instructional Units.

    ERIC Educational Resources Information Center

    Diehl, Donald W.; Penner, Wayman R.

    This manual contains instructional materials which measure student performance on commercial carpentry behavioral objectives; criterion-referenced evaluation instruments are also included. Each of the manual's eleven sections consists of one or more units of instruction. Each instructional unit includes behavioral objectives, suggested activities…

  18. Space Station Freedom commercial infrastructure

    NASA Technical Reports Server (NTRS)

    Barquinero, Kevin; Cassidy, Jeff

    1989-01-01

    NASA policy concerning the commercial infrastructure of the Space Station is examined. Plans for receiving and evaluating unsolicited proposals to provide commercial infrastructure are outlined. The guidelines for development of the commercial infrastructure and examples of opportunities for industry are listed. Also, a program for industry feedback concerning the commercial infrastructure policy is discussed.

  19. Commercial jet transport crashworthiness

    NASA Technical Reports Server (NTRS)

    Widmayer, E.; Brende, O. B.

    1982-01-01

    The results of a study to identify areas of research and approaches that may result in improved occupant survivability and crashworthiness of transport aircraft are given. The study defines areas of structural crashworthiness for transport aircraft which might form the basis for a research program. A 10-year research and development program to improve the structural impact resistance of general aviation and commercial jet transport aircraft is planned. As part of this program parallel studies were conducted to review the accident experience of commercial transport aircraft, assess the accident performance of structural components and the status of impact resistance technology, and recommend areas of research and development for that 10-year plan. The results of that study are also given.

  20. European commercial aeronautics

    NASA Technical Reports Server (NTRS)

    Van Zandt, J Parker

    1925-01-01

    During the months of June to September, 1924, I personally visited the principal airports of Europe and traveled as a passenger some 6500 air miles on English, French, Romanian, Polish, German and Dutch air lines in order to investigate the development of commercial aviation abroad. The results of the investigation are embodied in a series of reports, of which a summary of the general findings is given below.

  1. Accelerating Commercial Remote Sensing

    NASA Technical Reports Server (NTRS)

    1995-01-01

    Through the Visiting Investigator Program (VIP) at Stennis Space Center, Community Coffee was able to use satellites to forecast coffee crops in Guatemala. Using satellite imagery, the company can produce detailed maps that separate coffee cropland from wild vegetation and show information on the health of specific crops. The data can control coffee prices and eventually may be used to optimize application of fertilizers, pesticides and irrigation. This would result in maximal crop yields, minimal pollution and lower production costs. VIP is a mechanism involving NASA funding designed to accelerate the growth of commercial remote sensing by promoting general awareness and basic training in the technology.

  2. Commercialization Assistance Program

    SciTech Connect

    Jenny C Servo, Ph D

    2008-02-15

    The Commercialization Assistance Program (CAP) is offered to Phase II awardees of the Department of Energy's Small Business Innovation Research (SBIR) and Small Business Technology Transfer (STTR) programs. The purpose of this program is to increase both the likelihood and speed of technology transition to Phase III of technologies which DOE has funded. This program has been offered to DOE SBIR firms since 1990 and has resulted in significant and well documented return on investment. This final report decribes the results of the CAP that was offered to participants during the last cycle.

  3. Overview of Commercial Buildings, 2003

    EIA Publications

    2008-01-01

    The Energy Information Administration conducts the Commercial Buildings Energy Consumption Survey (CBECS) to collect information on energy-related building characteristics and types and amounts of energy consumed in commercial buildings in the United States.

  4. Accelerating advanced-materials commercialization

    NASA Astrophysics Data System (ADS)

    Maine, Elicia; Seegopaul, Purnesh

    2016-05-01

    Long commercialization times, high capital costs and sustained uncertainty deter investment in innovation for advanced materials. With appropriate strategies, technology and market uncertainties can be reduced, and the commercialization of advanced materials accelerated.

  5. Aerocapacitor commercialization plan

    SciTech Connect

    1995-09-12

    The purpose of the Power-One Aerocapacitor Commercialization Plan is to communicate to members of management and to all employees the overall objectives of the corporation. Power-One, Inc., has participated in a US Federal Government Technology Reinvestment Project (TRP), entitled {open_quotes}Advanced Power Conversion based on the Aerocapacitor{close_quotes}: the project is a group effort, with Lawrence Livermore National Labs, GenCorp/Aerojet, PolyStor Corp. (a start-up company), and Power-One forming the consortium. The expected resulting technology is the {open_quotes}Aerocapacitor{close_quotes}, which possesses much higher performance levels than the usual capacitors on the market today. Power-One hopes to incorporate the Aerocapacitor into some of its products, hence enhancing their performance, as well as market privately-labeled aerocapacitors through its distribution channels. This document describes the details of Power-One`s plan to bring to market and commercialize the Aerocapacitor and Aerocapacitor-based products. This plan was formulated while Power-One was part of the Oerocap project. It has since pulled out of this project. What is presented in this plan is the work which was developed prior to the business decision to terminate this work.

  6. Commercial nuclear power 1990

    SciTech Connect

    Not Available

    1990-09-28

    This report presents the status at the end of 1989 and the outlook for commercial nuclear capacity and generation for all countries in the world with free market economies (FME). The report provides documentation of the US nuclear capacity and generation projections through 2030. The long-term projections of US nuclear capacity and generation are provided to the US Department of Energy's (DOE) Office of Civilian Radioactive Waste Management (OCRWM) for use in estimating nuclear waste fund revenues and to aid in planning the disposal of nuclear waste. These projections also support the Energy Information Administration's annual report, Domestic Uranium Mining and Milling Industry: Viability Assessment, and are provided to the Organization for Economic Cooperation and Development. The foreign nuclear capacity projections are used by the DOE uranium enrichment program in assessing potential markets for future enrichment contracts. The two major sections of this report discuss US and foreign commercial nuclear power. The US section (Chapters 2 and 3) deals with (1) the status of nuclear power as of the end of 1989; (2) projections of nuclear capacity and generation at 5-year intervals from 1990 through 2030; and (3) a discussion of institutional and technical issues that affect nuclear power. The nuclear capacity projections are discussed in terms of two projection periods: the intermediate term through 2010 and the long term through 2030. A No New Orders case is presented for each of the projection periods, as well as Lower Reference and Upper Reference cases. 5 figs., 30 tabs.

  7. MPRS (URBOT) commercialization

    NASA Astrophysics Data System (ADS)

    Ciccimaro, Donny; Baker, William; Hamilton, Ian; Heikkila, Leif; Renick, Joel

    2003-09-01

    The Man Portable Robotic System (MPRS) project objective was to build and deliver hardened robotic systems to the U.S. Army"s 10 Mountain Division in Fort Drum, New York. The system, specifically designed for tunnel and sewer reconnaissance, was equipped with visual and audio sensors that allowed the Army engineers to detect trip wires and booby traps before personnel entered a potentially hostile environment. The MPRS system has shown to be useful in government and military supported field exercises, but the system has yet to reach the hands of civilian users. Potential users in Law Enforcement and Border Patrol have shown a strong interest in the system, but robotic costs were thought to be prohibitive for law enforcement budgets. Through the Center for Commercialization of Advanced Technology (CCAT) program, an attempt will be made to commercialize the MPRS. This included a detailed market analysis performed to verify the market viability of the technologies. Hence, the first step in this phase is to fully define the marketability of proposed technologies in terms of actual market size, pricing and cost factors, competitive risks and/or advantages, and other key factors used to develop marketing and business plans.

  8. Commercial Driver Medical Examinations

    PubMed Central

    Moffitt, Gary; Hanowski, Richard J.; Kales, Stefanos N.; Porter, Richard J.; Hegmann, Kurt T.

    2015-01-01

    Objective: The objective of this study was to assess relationships between body mass index (BMI) and comorbid conditions within a large sample of truck drivers. Methods: Commercial driver medical examination data from 88,246 commercial drivers between 2005 and 2012 were analyzed for associations between BMI, medical disorders, and driver certification. Results: Most drivers were obese (53.3%, BMI >30.0 kg/m2) and morbidly obese (26.6%, BMI >35.0 kg/m2), higher than prior reports. Obese drivers were less likely to be certified for 2 years and more likely to report heart disease, hypertension, diabetes mellitus, nervous disorders, sleep disorders, and chronic low back pain (all P < 0.0001). There are relationships between multiple potentially disqualifying conditions and increasing obesity (P < 0.0001). Morbid obesity prevalence increased 8.9% and prevalence of three or more multiple conditions increased fourfold between 2005 and 2012. Conclusions: Obesity is related to multiple medical factors as well as increasing numbers of conditions that limit driving certification. PMID:25710607

  9. Commercial Zone Melting Ingots

    NASA Astrophysics Data System (ADS)

    Zheng, Yun; Xie, Hongyao; Shu, Shengcheng; Yan, Yonggao; Li, Han; Tang, Xinfeng

    2014-06-01

    Bismuth telluride-based compounds have been extensively utilized for commercial application. However, thermoelectric materials must suffer numerous mechanical vibrations and thermal stresses while in service, making it equally important to discuss the mechanical properties, especially at high temperature. In this study, the compressive and bending strengths of Bi0.5Sb1.5Te3 commercial zone melting (ZM) ingots were investigated at 25, 100, and 200 °C, respectively. Due to the obvious anisotropy of materials prepared by ZM method, the effect of anisotropy on the strengths was also explored. Two-parameter Weibull distribution was employed to fit a series of values acquired by a universal testing machine. And digital speckle photography was applied to record the strain field evolution, providing visual observation of surface strain. The compressive and bending strengths along ZM direction were approximately three times as large as those perpendicular to the ZM direction independent of the temperature, indicating a weak van der Waals bond along the c axis.

  10. Industrial and commercial cogeneration

    SciTech Connect

    Not Available

    1983-02-01

    The central issues surrounding cogeneration are highlighted and OTA's findings on those issues are summarized. The context in which cogenerators will operate is reviewed, including the national energy situation, current electric utility operation, and the regulation and financing of cogeneration systems. An overview of the cogeneration technologies is presented, including their operating and fuel use characteristics, projected costs, and requirements for interconnection with the utility grid. The opportunities for cogeneration in industry, commercial buildings, and rural areas are analyzed. The impacts of cogeneration on electric utilities' planning and operation and on the environment, as well as on general economic and institutional factors such as capital requirements, employment, and the decentralization of energy supply are assessed. Policy considerations for the use of cogeneration technologies are discussed. The appendices include a description of the model used to analyze commercial cogeneration and of the methods used to calculate emissions balances for air quality analysis, as well as a glossary of terms and a list of abbreviations used. (MHR)

  11. The commercialization of migration.

    PubMed

    Abrera-mangahas, M A

    1989-01-01

    International migration is not new to the Philippines. In the recent outflow of contract workers to the Middle East, there is a shift from individual and family initiated migrations to the more organized, highly commercial variety. While profit-taking intermediaries have played some role in the past, the increase in the number and influence of these intermediaries has altered the story of migration decision-making. In 1975, the signing of the bilateral labor agreement between the governments of Iran and the Philippines signalled the rising demand for Filipino contract workers. From 1970 to 1975, the number of Asian migrant workers in the Gulf countries rose from about 120,000 to 370,000. These figures rose dramatically to 3.3 million in 1985. The growing share of organized and commercialized migration has altered migration decision making. Primarily, intermediaries are able to broaden access to foreign job and high wage opportunities. Commercialization effectively raises the transaction costs for contract migration. Studies on recruitment costs and fees show that self-solicited foreign employment costs less than employment obtained through recruitment agents and intermediaries. The difference in the 2 prices is due, not only to overhead costs of intermediation, but more importantly to the rent exacted by agents from having job information and placement rights. In the Philippines in October 1987 the average placement fee was P8000, greatly exceeding the mandated maximum fee level of P5000. This average is understated because the computation includes the 17% who do not pay any fees. The widespread and popular view of recruitment intermediaries is negative, dominated by images of abuses and victims. Private intermediaries and the government bureaucracy need each other. Intermediaries need government; their consistent demand for incentives and protection is indicative. On the other hand, government expands its supervision of control of overseas employment via the

  12. Commercial Generic Bioprocessing Apparatus

    NASA Technical Reports Server (NTRS)

    1998-01-01

    CGBA, a facility developed by BioServe Space Technologies, a NASA Commercial Generic Bioprocessing Space Center, allows a variety of sophisticated bioprocessing research to be performed using a common device. The Fluids Processing Apparatus is essentially a microgravity test tube that allows a variety of complex investigations to be performed in space. This is a glass barrel containing several chambers separated by rubber stoppers. Eight FPAs are placed together in a Group Activation Pack (GAP), which allows all of the research to be started simultaneously by turning a single crank. Eight GAPs, or similar-sized payloads, can be stored in a single CGBA temperature controlled locker, which now uses motor drives to automatically turn the cranks to start and stop experiments. On STS-95, research efforts cover eight major areas that will benefit Earth-based products ranging from the production of pharmaceuticals to fish hatcheries.

  13. Commercial Data Mining Software

    NASA Astrophysics Data System (ADS)

    Zhang, Qingyu; Segall, Richard S.

    This chapter discusses selected commercial software for data mining, supercomputing data mining, text mining, and web mining. The selected software are compared with their features and also applied to available data sets. The software for data mining are SAS Enterprise Miner, Megaputer PolyAnalyst 5.0, PASW (formerly SPSS Clementine), IBM Intelligent Miner, and BioDiscovery GeneSight. The software for supercomputing are Avizo by Visualization Science Group and JMP Genomics from SAS Institute. The software for text mining are SAS Text Miner and Megaputer PolyAnalyst 5.0. The software for web mining are Megaputer PolyAnalyst and SPSS Clementine . Background on related literature and software are presented. Screen shots of each of the selected software are presented, as are conclusions and future directions.

  14. Commercializing medical technology

    PubMed Central

    Lieberman, Mark A.

    2007-01-01

    As medicine moves into the 21st century, life saving therapies will move from inception into medical products faster if there is a better synergy between science and business. Medicine appears to have 50-year innovative cycles of education and scientific discoveries. In the 1880’s, the chemical industry in Germany was faced with the dilemma of modernization to exploit the new scientific discoveries. The solution was the spawning of novel technical colleges for training in these new chemical industries. The impact of those new employees and their groundbreaking compounds had a profound influence on medicine and medical education in Germany between 1880 and 1930. Germany dominated international science during this period and was a training center for scientists worldwide. This model of synergy between education and business was envied and admired in Europe, Asia and America. British science soon after evolved to dominate the field of science during the prewar and post World War (1930’s–1970’s) because the German scientists fled Hitler’s government. These expatriated scientists had a profound influence on the teaching and training of British scientists, which lead to advances in medicine such as antibiotics. After the Second World War, the US government wisely funded the development of the medical infrastructure that we see today. British and German scientists in medicine moved to America because of this bountiful funding for their research. These expatriated scientists helped drive these medical advances into commercialized products by the 1980’s. America has been the center of medical education and advances of biotechnology but will it continue? International scientists trained in America have started to return to Europe and Asia. These American-trained scientists and their governments are very aware of the commercial potential of biotechnology. Those governments are now more prepared to play an active role this new science. Germany, Ireland, Britain

  15. Commercial users panel

    NASA Technical Reports Server (NTRS)

    Byrd, Joseph S.; Flatau, Carl; Hodge, David C.; Hollis, Ralph; Leach, Eugene F.; Gilbert, Ray; Cleland, John; Leifer, Larry; Naser, Joseph; Schmuter, Samson D.

    1987-01-01

    The discussions of motives and requirements for telerobotics application demonstrated that, in many cases, lack of progress was a result not of limited opportunities but of inadequate mechanisms and resources for promoting opportunities. Support for this conclusion came from Telerobotics, Inc., one of the few companies devoted primarily to telerobot systems. They have produced units for such diverse applications as nuclear fusion research, particle accelerators, cryogenics, firefighting, marine biology/undersea systems and nuclear mobile robotics. Mr. Flatau offered evidence that telerobotics research is only rarely supported by the private sector and that it often presents a difficult market. Questions on the mechanisms contained within the NASA technology transfer process for promoting commercial opportunities were fielded by Ray Gilbert and Tom Walters. A few points deserve emphasis: (1) NASA/industry technology transfer occurs in both directions and NASA recognizes the opportunity to learn a great deal from industry in the fields of automation and robotics; (2) promotion of technology transfer projects takes a demand side approach, with requests to industry for specific problem identification. NASA then proposes possible solutions; and (3) comittment ofmotivated and technically qualified people on each end of a technology transfer is essential.

  16. Fundamentals of Commercial Art. Module 1. Commercial Art. Instructor's Guide.

    ERIC Educational Resources Information Center

    Davis, Diane; Tadrick, Christine

    This module is the first of five in the Commercial Art series. The curriculum guide is designed for competency-based teaching and testing. Within this module on fundamentals of commercial art are six instructional units. A cross-reference table reveals how the instructional components of the module relate to Missouri competencies. Each unit…

  17. Commercial Art I and Commercial Art II: An Instructional Guide.

    ERIC Educational Resources Information Center

    Montgomery County Public Schools, Rockville, MD.

    A teacher's guide for two sequential one-year commercial art courses for high school students is presented. Commercial Art I contains three units: visual communication, product design, and environmental design. Students study visual communication by analyzing advertising techniques, practicing fundamental drawing and layout techniques, creating…

  18. Analysis of Commercial Contract Training.

    ERIC Educational Resources Information Center

    Copeland, D. Robert; And Others

    The report describes the Phase I findings of a two-phase study to determine the applications of commercial contract training to the Navy Training System. The objective of the study is to determine if commercial sources would be cost and training effective alternatives for current and peak Navy skill training requirements. The study was conducted…

  19. Space Station commercial user development

    NASA Technical Reports Server (NTRS)

    1984-01-01

    The commercial utilization of the space station is investigated. The interest of nonaerospace firms in the use of the space station is determined. The user requirements are compared to the space station's capabilities and a feasibility analysis of a commercial firm acting as an intermediary between NASA and the private sector to reduce costs is presented.

  20. Commercialization of MHD power technology

    SciTech Connect

    Aleman, D.J.; Jensen, A.D.; Probert, P.B.

    1984-08-01

    This paper presents an approach to the commercialization of Magnetohydrodynamics (MHD) technology from the perspective of an equipment manufacturer. It discusses and recommends actions to be taken in solving technical problems and mitigating risk for the first commercial MHD power plant.

  1. Teaching Commercial German Through Advertisements.

    ERIC Educational Resources Information Center

    Heyer, Elfriede A.

    Advertisements can be used in many ways to facilitate the teaching of a commercial language. If reproduced as slides or other visual aids, they serve as a visual warm-up exercise for each class period, either reinforcing previously discussed topics or introducing new ones. Catchy headlines in commercials promote rapid expansion of vocabulary and…

  2. Lessons learned: The commercialization process

    SciTech Connect

    Padilla, B.A.; Gritzo, R.E.; Garcia, J.J.

    1996-03-01

    One successful component of a commercialization strategy includes the implementation of an industrial outreach workshop. This workshop is designed to select an industrial partner with the skills necessary to successfully commercialize a federally-funded, laboratory developed technology. These workshops provide efficiency and effectiveness and, in addition, ensure that all prospective partners receive equal access to the same quality and quantity of information.

  3. 150 Passenger Commercial Aircraft

    NASA Technical Reports Server (NTRS)

    Bucovsky, Adrian; Romli, Fairuz I.; Rupp, Jessica

    2002-01-01

    It has been projected that the need for a short-range mid-sized, aircraft is increasing. The future strategy to decrease long-haul flights will increase the demand for short-haul flights. Since passengers prefer to meet their destinations quickly, airlines will increase the frequency of flights, which will reduce the passenger load on the aircraft. If a point-to-point flight is not possible, passengers will prefer only a one-stop short connecting flight to their final destination. A 150-passenger aircraft is an ideal vehicle for these situations. It is mid-sized aircraft and has a range of 3000 nautical miles. This type of aircraft would market U.S. domestic flights or inter-European flight routes. The objective of the design of the 150-passenger aircraft is to minimize fuel consumption. The configuration of the aircraft must be optimized. This aircraft must meet CO2 and NOx emissions standards with minimal acquisition price and operating costs. This report contains all the work that has been performed for the completion of the design of a 150 passenger commercial aircraft. The methodology used is the Technology Identification, Evaluation, and Selection (TIES) developed at Georgia Tech Aerospace Systems Design laboratory (ASDL). This is an eight-step conceptual design process to evaluate the probability of meeting the design constraints. This methodology also allows for the evaluation of new technologies to be implemented into the design. The TIES process begins with defining the problem with a need established and a market targeted. With the customer requirements set and the target values established, a baseline concept is created. Next, the design space is explored to determine the feasibility and viability of the baseline aircraft configuration. If the design is neither feasible nor viable, new technologies can be implemented to open up the feasible design space and allow for a plausible solution. After the new technologies are identified, they must be evaluated

  4. Commercial researcher perspective

    NASA Astrophysics Data System (ADS)

    Delucas, Larry

    Protein crystallography--a research tool used to study the structure of the complex building blocks of living systems--has a lot to gain from space-based research. In order to know how a protein works in the human body, researchers must understand its molecular structure. Researchers have identified 150,000 different proteins in the body, but they now know the structure of less than a third of them. The only viable technique for analyzing the structure of these proteins is x-ray diffraction of the proteins in their crystal form. The better the quality of a protein crystal, the more useful it is to researchers who are trying to delineate its structure. The microgravity environment of space allows protein crystals to grow nearly undisturbed by convection and other gravity-driven forces that cause flaws to form in them on the ground. In space, lack of convection enables protein crystals to grow more slowly than they do on Earth, and the slower a protein crystal grows, the fewer flaws it will have. Protein crystal growth experiments have already flown on 14 Space Shuttle missions. This year's USML-1 Spacelab mission included protein crystal growth experiments conducted for commercial researchers. The results of protein crystal experiments flown thus far have been larger crystals with more uniform morphologies. The Center for Macromolecular Crystallography (A NASA-cosponsored CCDS) currently builds flight hardware to meet researchers' needs and handles sample loading and retrieval for flight experiments. Protein crystallography enables 'rational drug design': the development of drugs that bind only with the target protein and, hence, do not cause side effects. For example, pharmaceutical companies presently are interested in developing drugs that can inhibit purine nucleoside phosphorylase (PNP), a protein that plays a role in auto-immune diseases. To continue these kinds of investigations, researchers need a constant supply of protein crystals that are as free of flaws

  5. Commercial researcher perspective

    NASA Technical Reports Server (NTRS)

    Delucas, Larry

    1992-01-01

    Protein crystallography--a research tool used to study the structure of the complex building blocks of living systems--has a lot to gain from space-based research. In order to know how a protein works in the human body, researchers must understand its molecular structure. Researchers have identified 150,000 different proteins in the body, but they now know the structure of less than a third of them. The only viable technique for analyzing the structure of these proteins is x-ray diffraction of the proteins in their crystal form. The better the quality of a protein crystal, the more useful it is to researchers who are trying to delineate its structure. The microgravity environment of space allows protein crystals to grow nearly undisturbed by convection and other gravity-driven forces that cause flaws to form in them on the ground. In space, lack of convection enables protein crystals to grow more slowly than they do on Earth, and the slower a protein crystal grows, the fewer flaws it will have. Protein crystal growth experiments have already flown on 14 Space Shuttle missions. This year's USML-1 Spacelab mission included protein crystal growth experiments conducted for commercial researchers. The results of protein crystal experiments flown thus far have been larger crystals with more uniform morphologies. The Center for Macromolecular Crystallography (A NASA-cosponsored CCDS) currently builds flight hardware to meet researchers' needs and handles sample loading and retrieval for flight experiments. Protein crystallography enables 'rational drug design': the development of drugs that bind only with the target protein and, hence, do not cause side effects. For example, pharmaceutical companies presently are interested in developing drugs that can inhibit purine nucleoside phosphorylase (PNP), a protein that plays a role in auto-immune diseases. To continue these kinds of investigations, researchers need a constant supply of protein crystals that are as free of flaws

  6. NASA's approach to space commercialization

    NASA Technical Reports Server (NTRS)

    Gillam, Isaac T., IV

    1986-01-01

    The NASA Office of Commercial Programs fosters private participation in commercially oriented space projects. Five Centers for the Commercial Development of Space encourage new ideas and perform research which may yield commercial processes and products for space ventures. Joint agreements allow companies who present ideas to NASA and provide flight hardware access to a free launch and return from orbit. The experimenters furnish NASA with sufficient data to demonstrate the significance of the results. Ground-based tests are arranged for smaller companies to test the feasibility of concepts before committing to the costs of developing hardware. Joint studies of mutual interest are performed by NASA and private sector researchers, and two companies have signed agreements for a series of flights in which launch costs are stretched out to meet projected income. Although Shuttle flights went on hold following the Challenger disaster, extensive work continues on the preparation of commercial research payloads that will fly when Shuttle flights resume.

  7. Composite components on commercial aircraft

    NASA Technical Reports Server (NTRS)

    Dexter, H. B.

    1980-01-01

    The paper considers the use of composite components in commercial aircraft. NASA has been active in sponsoring flight service programs with advanced composites for the last 10 years, with 2.5 million total composite component hours accumulated since 1970 on commercial transports and helicopters with no significant degradation in residual strength of composite components. Design, inspection, and maintenance procedures have been developed; a major NASA/US industry technology program has been developed to reduce fuel consumption of commercial transport aircraft through the use of advanced composites.

  8. Pilot production & commercialization of LAPPD™

    NASA Astrophysics Data System (ADS)

    Minot, Michael J.; Bennis, Daniel C.; Bond, Justin L.; Craven, Christopher A.; O`Mahony, Aileen; Renaud, Joseph M.; Stochaj, Michael E.; Elam, Jeffrey W.; Mane, Anil U.; Demarteau, Marcellinus W.; Wagner, Robert G.; McPhate, Jason B.; Helmut Siegmund, Oswald; Elagin, Andrey; Frisch, Henry J.; Northrop, Richard; Wetstein, Matthew J.

    2015-07-01

    We present a progress update on plans to establish pilot production and commercialization of Large Area (400 cm2) Picosecond Photodetector (LAPPD™). Steps being taken to commercialize this MCP and LAPPD™ technology and begin tile pilot production are presented including (1) the manufacture of 203 mm×203 mm borosilicate glass capillary arrays (GCAs), (2) optimization of MCP performance and creation of an ALD coating facility to manufacture MCPs and (3) design, construction and commissioning of UHV tile integration and sealing facility to produce LAPPDs. Taken together these plans provide a "pathway toward commercialization".

  9. The Seasat commercial demonstration program

    NASA Technical Reports Server (NTRS)

    Mccandless, S. W.; Miller, B. P.; Montgomery, D. R.

    1981-01-01

    The background and development of the Seasat commercial demonstration program are reviewed and the Seasat spacecraft and its sensors (altimeter, wind field scatterometer, synthetic aperture radar, and scanning multichannel microwave radiometer) are described. The satellite data distribution system allows for selected sets of data, reformatted or tailored to specific needs and geographical regions, to be available to commercial users. Products include sea level and upper atmospheric pressure, sea surface temperature, marine winds, significant wave heights, primary wave direction and period, and spectral wave data. The results of a set of retrospective case studies performed for the commercial demonstration program are described. These are in areas of application such as marine weather and ocean condition forecasting, offshore resource exploration and development, commercial fishing, and marine transportation.

  10. Commercialization of parabolic dish systems

    NASA Technical Reports Server (NTRS)

    Washom, B.

    1982-01-01

    The impact of recent federal tax and regulatory legislation on the commercialization of parabolic solar reflector technology is assessed. Specific areas in need of technical or economic improvement are noted.

  11. Commercial Crew Planning Status Forum

    NASA Video Gallery

    NASA presents an overview of common themes captured from industry responses provided to NASA's Commercial Crew Initiative Request for Information (RFI) published on May 21, 2010. The forum includes...

  12. Commercialization of parabolic dish systems

    NASA Astrophysics Data System (ADS)

    Washom, B.

    1982-07-01

    The impact of recent federal tax and regulatory legislation on the commercialization of parabolic solar reflector technology is assessed. Specific areas in need of technical or economic improvement are noted.

  13. Composite components on commercial aircraft

    NASA Technical Reports Server (NTRS)

    Dexter, H. B.

    1980-01-01

    Flight experience gained with numerous composite aircraft structures is discussed. Both commercial transports and helicopters are included. Design concepts with significant mass savings and appropriate inspection and maintenance procedures are among the factors considered. Also, a major NASA/U.S. industry technology program to reduce fuel consumption of commercial transport aircraft through the use of advanced composites is described, including preliminary results. Ground and flight environmental effects on the composite materials used in the flight service programs are also discussed.

  14. Rethinking "Commercial" Surrogacy in Australia.

    PubMed

    Millbank, Jenni

    2015-09-01

    This article proposes reconsideration of laws prohibiting paid surrogacy in Australia in light of increasing transnational commercial surrogacy. The social science evidence base concerning domestic surrogacy in developed economies demonstrates that payment alone cannot be used to differentiate "good" surrogacy arrangements from "bad" ones. Compensated domestic surrogacy and the introduction of professional intermediaries and mechanisms such as advertising are proposed as a feasible harm-minimisation approach. I contend that Australia can learn from commercial surrogacy practices elsewhere, without replicating them. PMID:25015592

  15. Commercializing fuel cells: managing risks

    NASA Astrophysics Data System (ADS)

    Bos, Peter B.

    Commercialization of fuel cells, like any other product, entails both financial and technical risks. Most of the fuel cell literature has focussed upon technical risks, however, the most significant risks during commercialization may well be associated with the financial funding requirements of this process. Successful commercialization requires an integrated management of these risks. Like any developing technology, fuel cells face the typical 'Catch-22' of commercialization: "to enter the market, the production costs must come down, however, to lower these costs, the cumulative production must be greatly increased, i.e. significant market penetration must occur". Unless explicit steps are taken to address this dilemma, fuel cell commercialization will remain slow and require large subsidies for market entry. To successfully address this commercialization dilemma, it is necessary to follow a market-driven commercialization strategy that identifies high-value entry markets while minimizing the financial and technical risks of market entry. The financial and technical risks of fuel cell commercialization are minimized, both for vendors and end-users, with the initial market entry of small-scale systems into high-value stationary applications. Small-scale systems, in the order of 1-40 kW, benefit from economies of production — as opposed to economies to scale — to attain rapid cost reductions from production learning and continuous technological innovation. These capital costs reductions will accelerate their commercialization through market pull as the fuel cell systems become progressively more viable, starting with various high-value stationary and, eventually, for high-volume mobile applications. To facilitate market penetration via market pull, fuel cell systems must meet market-derived economic and technical specifications and be compatible with existing market and fuels infrastructures. Compatibility with the fuels infrastructure is facilitated by a

  16. Commercial SNF Accident Release Fractions

    SciTech Connect

    J. Schulz

    2004-11-05

    The purpose of this analysis is to specify and document the total and respirable fractions for radioactive materials that could be potentially released from an accident at the repository involving commercial spent nuclear fuel (SNF) in a dry environment. The total and respirable release fractions are used to support the preclosure licensing basis for the repository. The total release fraction is defined as the fraction of total commercial SNF assembly inventory, typically expressed as an activity inventory (e.g., curies), of a given radionuclide that is released to the environment from a waste form. Radionuclides are released from the inside of breached fuel rods (or pins) and from the detachment of radioactive material (crud) from the outside surfaces of fuel rods and other components of fuel assemblies. The total release fraction accounts for several mechanisms that tend to retain, retard, or diminish the amount of radionuclides that are available for transport to dose receptors or otherwise can be shown to reduce exposure of receptors to radiological releases. The total release fraction includes a fraction of airborne material that is respirable and could result in inhalation doses; this subset of the total release fraction is referred to as the respirable release fraction. Accidents may involve waste forms characterized as: (1) bare unconfined intact fuel assemblies, (2) confined intact fuel assemblies, or (3) canistered failed commercial SNF. Confined intact commercial SNF assemblies at the repository are contained in shipping casks, canisters, or waste packages. Four categories of failed commercial SNF are identified: (1) mechanically and cladding-penetration damaged commercial SNF, (2) consolidated/reconstituted assemblies, (3) fuel rods, pieces, and debris, and (4) nonfuel components. It is assumed that failed commercial SNF is placed into waste packages with a mesh screen at each end (CRWMS M&O 1999). In contrast to bare unconfined fuel assemblies, the

  17. Transitioning NASA Space Operations to Commercial Services

    NASA Technical Reports Server (NTRS)

    Gilbert, Charlene E.

    1998-01-01

    Major considerations associated with "Transitioning NASA Space Operations to Commercial Services" are presented in viewgraph form. Specific topics include: 1) Government use of commercial frequencies vs. commercial use of commercial frequencies for government use; 2) Commercial use of government frequencies; 3) Government vs commercial: Access techniques, data formats, and modulation and coding; 4) Government need for multiple sources: backup and competition; 5) Government in perceived competition with commercial service providers if TDRSS is used for commercial purposes; and 6) Coordination required among plans for CSOC, NSCP, and satellite industry.

  18. Commercial Crew Development Program Overview

    NASA Technical Reports Server (NTRS)

    Russell, Richard W.

    2011-01-01

    NASA's Commercial Crew Development Program is designed to stimulate efforts within the private sector that will aid in the development and demonstration of safe, reliable, and cost-effective space transportation capabilities. With the goal of delivery cargo and eventually crew to Low Earth Orbit (LEO) and the International Space Station (ISS) the program is designed to foster the development of new spacecraft and launch vehicles in the commercial sector. Through Space Act Agreements (SAAs) in 2011 NASA provided $50M of funding to four partners; Blue Origin, The Boeing Company, Sierra Nevada Corporation, and SpaceX. Additional, NASA has signed two unfunded SAAs with ATK and United Space Alliance. This paper will give a brief summary of these SAAs. Additionally, a brief overview will be provided of the released version of the Commercial Crew Development Program plans and requirements documents.

  19. 30 GHz Commercial Satellite Receivers

    NASA Technical Reports Server (NTRS)

    Kerczewski, Robert J.; Ponchak, George E.; Romanofsky, Robert R.

    1989-01-01

    NASA's research and development work in satellite communications for the past 10 years has included a major technology thrust aimed at opening the Ka frequency band to commercial exploitation. This has included the development and testing of advanced system network architectures, on-board switching and processing, multibeam and phased array antennas, and satellite and ground terminal RF and digital hardware. Development work in system hardware has focused on critical components including power amplifiers, satellite IF switch matrices, low noise receivers, baseband processors, and high data rate bandwidth efficient modems. This paper describes NASA's work in developing and testing 30 GHz low noise satellite receivers for commercial space communications uplink applications. Frequencies allotted for fixed service commercial satellite communications in the Ka band are 27.5 - 30.0 GHz for uplink transmission and 17.7 - 20.2 GHz for downlink transmission. The relatively large 2.5 GHz bandwidth lends itself to wideband, high data rate digital transmission applications.

  20. Composite components on commercial aircraft

    NASA Technical Reports Server (NTRS)

    Dexter, H. B.

    1980-01-01

    Commercial aircraft manufacturers are making production commitments to composite structure for future aircraft and modifications to current production aircraft. Flight service programs with advanced composites sponsored by NASA during the past 10 years are described. Approximately 2.5 million total composite component flight hours have been accumulated since 1970 on both commercial transports and helicopters. Design concepts with significant mass savings were developed, appropriate inspection and maintenance procedures were established, and satisfactory service was achieved for the various composite components. A major NASA/U.S. industry technology program to reduce fuel consumption of commercial transport aircraft through the use of advanced composites was undertaken. Ground and flight environmental effects on the composite materials used in the flight service programs supplement the flight service evaluation.

  1. Commercial sector can improve access.

    PubMed

    Finger, W R

    1998-01-01

    This article discusses the improved accessibility to family planning (FP) services made possible by expanding services among private physicians and through social marketing in developing countries. Encouraging private sector (PS) FP is a way to ease the caseload of public FP facilities and creating the potential for attracting more lower-income clients. Few developing countries have a "viable commercial market" for contraceptives. Commercial success depends upon a secure supply of FP supplies, well-trained providers, and consumer demand. Consumers want affordable, high-quality, and convenient services. Governments must ensure that regulations do not hamper PS programs. Public and private programs should not compete in ways that are counterproductive. The commercial sector includes private physicians, clinics, pharmacies, or hospitals without public subsidies. Public funding might be used to encourage PS distribution, especially condoms and messages about HIV and sexually transmitted disease prevention. Messages may target specific audiences and promote an appealing logo and packaging. SOMARC in Turkey promotes a network of commercial health care facilities that offer high quality FP at affordable prices. The model includes provider training, quality of care monitoring, marketing, a hotline, posted prices, and prices set by consumer affordability surveys. This model is being tried in both Nepal and the Philippines. Commercial marketing has been successful in Latin America, North Africa, and the Middle East. Commercial expansion and survival is dependent upon the satisfaction of consumer preferences for convenience, greater access, better confidentiality, and quality. Examples from Zimbabwe and Romania are used to show strategies for training private providers. Private providers will become involved, for instance, by offering targeted training programs. PMID:12293234

  2. Flat conductor cable commercialization project

    NASA Technical Reports Server (NTRS)

    Hogarth, P.; Wadsworth, E.

    1977-01-01

    An undercarpet flat conductor cable and a baseboard flat conductor cable system were studied for commercialization. The undercarpet system is designed for use in office and commercial buildings. It employs a flat power cable, protected by a grounded metal shield, that terminates in receptacles mounted on the floor. It is designed to interface with a flat conductor cable telephone system. The baseboard system consists of a flat power cable mounted in a plastic raceway; both the raceway and the receptacles are mounted on the surface of the baseboard. It is designed primarily for use in residential buildings, particularly for renovation and concrete and masonry construction.

  3. Commercial IEC portable neutron source

    SciTech Connect

    Sved, J.

    1997-12-01

    The inertial electrostatic confinement (IEC) fusion grade plasma devices are being developed as a commercial industrial product by Daimler-Benz Aerospace (DASA), Center Trauen, which has an exclusive license from the University of Illinois (UI) to manufacture the commercial implementation of the Miley et al. IEC inventions. DASA is funding the UI Fusion Studies Laboratory basic IEC research and the intellectual property protection process. The association of the DASA Space Infrastructure division with an apparently unrelated technology has arisen from the perception that IEC technology may benefit from certain aerospace technologies and eventually create a market for space infrastructure services. In addition, DASA Center Trauen has a number of environmental technology businesses.

  4. HVAC for commercial office buildings

    SciTech Connect

    Gupta, R.P.

    1997-03-01

    The design of mechanical systems for tenant interior projects is often viewed as a staid and mundane task. The work can seem repetitive and not require much creativity. Although the design tasks for tenant work may have been routine in the past, modern day concerns require the engineer to use some brainpower when the mechanical systems for a commercial office tenant are assessed and designed. This article identifies the important criteria for the evaluation of the mechanical infrastructure of a commercial office building and indicates how the best buildings address tenant issues.

  5. Successful commercialization of nanophotonic technology

    NASA Astrophysics Data System (ADS)

    Jaiswal, Supriya L.; Clarke, Roger B. M.; Hyde, Sam C. W.

    2006-08-01

    The exploitation of nanotechnology from proof of principle to realizable commercial applications encounters considerable challenges in regards to high volume, large scale, low cost manufacturability and social ethics. This has led to concerns over converting powerful intellectual property into realizable, industry attractive technologies. At The Technology Partnership we specifically address the issue of successful integration of nanophotonics into industry in markets such as biomedical, ophthalmic, energy, telecommunications, and packaging. In this paper we draw on a few examples where we have either developed industrial scale nanophotonic technology or engineering platforms which may be used to fortify nano/microphotonic technologies and enhance their commercial viability.

  6. 19 CFR 113.67 - Commercial gauger and commercial laboratory bond conditions.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 19 Customs Duties 1 2010-04-01 2010-04-01 false Commercial gauger and commercial laboratory bond... SECURITY; DEPARTMENT OF THE TREASURY CUSTOMS BONDS Customs Bond Conditions § 113.67 Commercial gauger and commercial laboratory bond conditions. Commercial Gauger Bond Conditions (a) Commercial gauger...

  7. Commercial Theme-Writing Services.

    ERIC Educational Resources Information Center

    Trexler, Joan; Kent, Laura

    This survey of the Higher Education Panel (HEP) of the American Council on Education was conducted in response to the growing concern among many members of the academic community about the threat posed to our higher education system by a new commercial service for college students, the theme writing firm. These companies make available to…

  8. College Companies and Commercial Activities.

    ERIC Educational Resources Information Center

    Further Education Unit, London (England).

    A feasibility study determined the number and scope of existing college companies set up by permission of the Commercial Activities in Further Education Act in Great Britain. A sample of six colleges was studied; managing directors of the six companies took part in semistructured interviews to explore some issues in greater depth. The advantages…

  9. Technology Transfer/Commercialization Report

    NASA Technical Reports Server (NTRS)

    2002-01-01

    Contents include the following: (1) Who we are. (2) Technology opportunities and successes in 2002: Hilbert-Huang transform; new sensors via sol-gel-filled fiber optics; hierarchical segmentation software. (3) Activities in 2002: encouraging researcher involvement; inventorying new technologies; patenting Goddard technologies; promoting Goddard technologies; establishing new agreements;seeking and bestowing awards. (4) How to reach Goddard's: technology commercialization office.

  10. Commercialism in Schools. ERIC Digest.

    ERIC Educational Resources Information Center

    Larson, Kirstin

    Businesses are increasingly making inroads into the classroom, particularly in underfunded schools. The dramatic rise in commercial activities in schools has sparked intense public debate, triggering a U.S. General Accounting Office (GAO) report and various regulatory attempts at district, state, and federal levels. This digest offers an overview…

  11. Commercial Demand Module - NEMS Documentation

    EIA Publications

    2014-01-01

    Documents the objectives, analytical approach and development of the National Energy Modeling System (NEMS) Commercial Sector Demand Module. The report catalogues and describes the model assumptions, computational methodology, parameter estimation techniques, model source code, and forecast results generated through the synthesis and scenario development based on these components.

  12. Commercial Security on the Internet.

    ERIC Educational Resources Information Center

    Liddy, Carrie

    1996-01-01

    Discusses commercial security on the Internet and explains public key technology as successfully melding the conflicting requirements of openness for practical business applications and isolation and confidentiality for protection of data. Examples of public key value-added products are described, including encryption, digital signature and…

  13. Reflections on Commercializing University Research.

    ERIC Educational Resources Information Center

    Hum, Derek

    2000-01-01

    Discusses the extent of commercialization of research in Canadian universities, explains why copyright enforcement is difficult, and discusses the benefits and disadvantages of licensing an innovation versus creating a spinoff company to exploit university discoveries. Explores issues related to sharing benefits of university discoveries. (SLD)

  14. Low-cost commercial transport

    NASA Technical Reports Server (NTRS)

    Mcpherson, J.

    1991-01-01

    The topics presented are covered in viewgraph form. The objectives are to develop and validate technology, design tools and methodologies to enable the low cost commercial development and operational uses of hydrogen and hydrocarbon fueled liquid engines, low pressure booster engines and hybrid engines.

  15. NASA's Commercial Communication Technology Program

    NASA Technical Reports Server (NTRS)

    Bagwell, James W.

    1998-01-01

    Various issues associated with "NASA's Commercial Communication Technology Program" are presented in viewgraph form. Specific topics include: 1) Coordination/Integration of government program; 2) Achievement of seamless interoperable satellite and terrestrial networks; 3) Establishment of program to enhance Satcom professional and technical workforce; 4) Precompetitive technology development; and 5) Effective utilization of spectrum and orbit assets.

  16. The Battle over Commercialized Schools

    ERIC Educational Resources Information Center

    Molnar, Alex; Garcia, David

    2006-01-01

    For the last 15 years, the Education Policy Studies Laboratory has studied trends in schoolhouse commercialism and has found that this practice is increasingly pervasive and diverse. The manifestations of marketing in public schools include incentive programs, such as Pizza Hut's "Book It!" program; contracts that grant soft drink and junk food…

  17. Albatros Commercial Airplane L 73

    NASA Technical Reports Server (NTRS)

    Ruhl, Karl; Wiederhold, Hasso

    1926-01-01

    The Albatros was a two engine commercial biplane carrying 2 pilots, eight passengers, and 160 KG of baggage. The framework is metal, the wings having plywood and fabric over the steel tubing. The L 73 was the first 2 engine biplane to be made in Germany.

  18. Commercial Software for Teaching Physics.

    ERIC Educational Resources Information Center

    Walters, William L.

    Computer software packages that are commercially available for physics instruction are compiled in this paper. Information for each program includes: the broad subject category (i.e., mechanics, waves and sound, heat and thermodynamics, electricity and magnetism, optics and light, modern physics, mathematical models, or general reference/testing…

  19. Commercial Photography: Scope and Sequence.

    ERIC Educational Resources Information Center

    Nashville - Davidson County Metropolitan Public Schools, TN.

    This scope and sequence guide, developed for a commercial photography vocational education program, represents an initial step in the development of a systemwide articulated curriculum sequence for all vocational programs within the Metropolitan Nashville Public School System. It was developed as a result of needs expressed by teachers, parents,…

  20. 27 CFR 10.21 - Commercial bribery.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2014-04-01 2014-04-01 false Commercial bribery. 10.21 Section 10.21 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL COMMERCIAL BRIBERY Commercial Bribery § 10.21 Commercial bribery. It...

  1. 27 CFR 10.21 - Commercial bribery.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2013-04-01 2013-04-01 false Commercial bribery. 10.21 Section 10.21 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL COMMERCIAL BRIBERY Commercial Bribery § 10.21 Commercial bribery. It...

  2. 27 CFR 10.21 - Commercial bribery.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2012-04-01 2012-04-01 false Commercial bribery. 10.21 Section 10.21 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS COMMERCIAL BRIBERY Commercial Bribery § 10.21 Commercial bribery. It...

  3. 27 CFR 10.21 - Commercial bribery.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2011-04-01 2011-04-01 false Commercial bribery. 10.21 Section 10.21 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS COMMERCIAL BRIBERY Commercial Bribery § 10.21 Commercial bribery. It...

  4. 36 CFR 5.6 - Commercial vehicles.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 36 Parks, Forests, and Public Property 1 2010-07-01 2010-07-01 false Commercial vehicles. 5.6... COMMERCIAL AND PRIVATE OPERATIONS § 5.6 Commercial vehicles. (a) The term “Commercial vehicle” as used in... used in connection with any business. (b) The use of government roads within park areas by...

  5. 27 CFR 10.21 - Commercial bribery.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Commercial bribery. 10.21 Section 10.21 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS COMMERCIAL BRIBERY Commercial Bribery § 10.21 Commercial bribery. It...

  6. 36 CFR 1005.6 - Commercial vehicles.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 36 Parks, Forests, and Public Property 3 2010-07-01 2010-07-01 false Commercial vehicles. 1005.6 Section 1005.6 Parks, Forests, and Public Property PRESIDIO TRUST COMMERCIAL AND PRIVATE OPERATIONS § 1005.6 Commercial vehicles. (a) The term “Commercial vehicle” as used in this section shall include,...

  7. 36 CFR 5.6 - Commercial vehicles.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 36 Parks, Forests, and Public Property 1 2011-07-01 2011-07-01 false Commercial vehicles. 5.6... COMMERCIAL AND PRIVATE OPERATIONS § 5.6 Commercial vehicles. (a) The term “Commercial vehicle” as used in... other vehicles when used in transporting movable property for a fee or profit, either as a direct...

  8. 36 CFR 5.6 - Commercial vehicles.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 36 Parks, Forests, and Public Property 1 2013-07-01 2013-07-01 false Commercial vehicles. 5.6... COMMERCIAL AND PRIVATE OPERATIONS § 5.6 Commercial vehicles. (a) The term “Commercial vehicle” as used in... other vehicles when used in transporting movable property for a fee or profit, either as a direct...

  9. Commercial space initiatives - Signs of hope

    NASA Technical Reports Server (NTRS)

    Stone, Barbara A.; Wood, Peter W.

    1990-01-01

    The paper discusses the evolution and status of commercial space development along with the U.S. Government's role in commercial development. Special attention is given to several activities in the NASA program in this area. These activities include the development of space technology to meet the needs of promising commercial applications (such as new satellite communications and remote sensing technology), serving as a customer to commercial space ventures, and providing direct assistance to private sector commercial space initiatives.

  10. Commercialization of nickel and iron aluminides

    SciTech Connect

    Sikka, V.K.

    1996-12-31

    Metallurgists are taught that intermetallics are brittle phases and should be avoided in alloys of commercial interest. This education is so deeply rooted that irrespective of significant advances made in ductilization of aluminides,the road to their acceptance commercialization is extremely difficult. This paper identifies the requirements for commercialization of any new alloys and reports the activities carried out to commercialize Ni and Fe aluminides. The paper also identifies areas which meet the current commercialization requirements and areas needing additional effort.