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Sample records for buffer layer thickness

  1. Thick lanthanum zirconate buffer layers from water-based precursor solutions on Ni-5%W substrates

    SciTech Connect

    Narayanan, Vyshnavi; Lommens, Petra; De Buysser, Klaartje; Huehne, Ruben; Van Driessche, Isabel

    2011-11-15

    In this work, water-based precursor solutions suitable for dip-coating of thick La{sub 2}Zr{sub 2}O{sub 7} (LZO) buffer layers for coated conductors on Ni-5%W substrates were developed. The solutions were prepared based on chelate chemistry using water as the main solvent. The effect of polymer addition on the maximum crack-free thickness of the deposited films was investigated. This novel solution preparation method revealed the possibility to grow single, crack-free layers with thicknesses ranging 100-280 nm with good crystallinity and an in-plane grain misalignment with average FWHM of 6.55{sup o}. TEM studies illustrated the presence of nanovoids, typical for CSD-LZO films annealed under Ar-5%H{sub 2} gas flow. The appropriate buffer layer action of the film in preventing the Ni diffusion was studied using XPS. It was found that the Ni diffusion was restricted to the first 30 nm of a 140 nm thick film. The surface texture of the film was improved using a seed layer. - Graphical abstract: Thick LZO buffer layers from water-based precursor solutions were synthesized and their crystallinity, microstructure and buffer layer action were studied. The buffer layer action of the LZO layer was substantial to restrict the Ni penetration within 30 nm of a 140 nm thick film. Highlights: > LZO buffer layers with high thicknesses for use in coated conductors were prepared. > Prepared from water-based solutions. > Polymeric PVP increases the crack-free critical thickness of thick films. > Thick films showed good barrier action against Ni penetration. > Seed layers promote epitaxial growth of thick layers.

  2. Influence of homo buffer layer thickness on the quality of ZnO epilayers.

    PubMed

    Eid, E A; Fouda, A N

    2015-10-01

    ZnO buffer layers with different thicknesses were deposited on a-plane sapphire substrates at 300 °C. ZnO epilayers were grown on ZnO buffers at 600 °C by radio-frequency magnetron sputtering and vacuum annealed at 900 °C for an hour. Influence of nucleation layer thickness on the structural and quality of ZnO thin films was investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and Raman spectroscopy. The best ZnO film quality was obtained with the ZnO buffer layer of 45 nm thick which provided the smoothest surface with RMS value of 0.3 nm. X-ray diffraction measurements reveal that the films have a single phase wurtzite structure with (0001) preferred crystal orientation. As evident from narrow FWHM of ZnO (0002) rocking curve, ZnO buffer can serve as a good template for the growth of high-quality ZnO films with little tilt. In addition, the micro-Raman scattering measurements at room temperature revealed the existence of Raman active phonon modes of ZnO; A1(TO), A1(LO) and E2(high). The latter two modes were not observed in thin buffer layer beside the dis-appearance of E2(low) mode in all films. PMID:25950638

  3. Effect of CeO{sub 2} buffer layer thickness on the structures and properties of YBCO coated conductors.

    SciTech Connect

    Li, M.; Zhao, X.; Ma, B.; Dorris, S. E.; Balachandran, U.; Maroni, V. A.; Wuhan Univ.

    2007-01-01

    Biaxially textured YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) films were grown on inclined-substrate-deposited (ISD) MgO-textured metal substrates by pulsed laser deposition. CeO{sub 2} was deposited as a buffer layer prior to YBCO growth. CeO{sub 2} layers of different thickness were prepared to evaluate the thickness dependence of the YBCO films. The biaxial alignment features of the films were examined by X-ray diffraction 2{theta}-scans, pole-figure, {phi}-scans and rocking curves of {Omega} angles. The significant influence of the CeO{sub 2} thickness on the structure and properties of the YBCO films were demonstrated and the optimal thickness was found to be about 10 nm. High values of T{sub c} = 91 K and J{sub c} = 5.5 x 10{sup 5} A/cm{sup 2} were obtained on YBCO films with optimal CeO{sub 2} thickness at 77 K in zero field. The possible mechanisms responsible for the dependence of the structure and the properties of the YBCO films on the thickness of the CeO{sub 2} buffer layers are discussed.

  4. Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits

    SciTech Connect

    Weatherford, T.R.; Fouts, D.J.; Marshall, P.W. |; Marshall, C.J.; Mathes, B.; LaMacchia, M.

    1997-12-01

    Heavy-ion Single Event Effects (SEE) test results reveal the role of growth temperature and buffer layer thickness in the use of a low-temperature grown GaAs (LT GaAs) buffer layer for suppressing SEE sensitivity in GaAs HIGFET circuits.

  5. Enhanced performance and stability in PBDTTT-C-T : PC70 BM polymer solar cells by optimizing thickness of NiOx buffer layers

    NASA Astrophysics Data System (ADS)

    Fan, Xi; Fang, Guojia; Cheng, Fei; Qin, Pingli; Huang, Huihui; Li, Yongfang

    2013-07-01

    We report efficient polymer solar cells (PSCs) based on PBDTTT-C-T : PC70BM with a NiOx anode buffer layer (thickness of 3-15 nm) prepared by radio-frequency magnetron sputtering deposition. The PSC with the optimum NiOx buffer layer thickness of 9 nm showed the highest power conversion efficiency of 7.42% with Voc of 0.75 V, Jsc of 15.82 mA cm-2 and FF of 62.5%, which was higher than that of the PSCs with a PEDOT : PSS buffer layer. Moreover, compared with the PSCs with a PEDOT : PSS buffer layer, the PSCs with the optimum NiOx buffer layer exhibited a better stability under N2 atmosphere. The results indicate that the sputtered 9 nm thick NiOx buffer layer is superior to the PEDOT : PSS buffer layer not only for better performance but also for improved long-term stability. The optimized NiOx buffer layer thickness possesses an appropriate energy level matching with PBDTTT-C-T, which results in effective hole collection and improved photovoltaic performance.

  6. Impact of buffer layer and Pt thickness on the interface structure and magnetic properties in (Co/Pt) multilayers.

    PubMed

    Bersweiler, M; Dumesnil, K; Lacour, D; Hehn, M

    2016-08-24

    The influence of Pt thickness on the interface structure (roughness / intermixing) and magnetic properties has been investigated for (Co / Pt) multilayers sputtered on a Pt or a thin oxide (MgO or AlO x ) buffer layer. When Pt thickness increases from 1.2 nm-2.2 nm, we observe that the effective anisotropy increases with the Pt thickness, simultaneously with the decrease of roughness, i.e. the occurrence of sharper interfaces. Perpendicular magnetic anisotropy (PMA) is still achieved on the oxide buffer layers, but with a lower effective anisotropy correlated to more perturbed interfaces. The detailed analysis of the saturation magnetization shows that: (i) M s is significantly enhanced in the case of rough/intermixed interfaces, which is attributed to and discussed in the framework of Pt induced polarization, (ii) the change in volume dipolar anisotropy is the main factor responsible for the reduction of K eff for systems grown on oxides. Beyond the major role of volume dipolar contribution that reduces PMA, a supplemental positive contribution promoting PMA can be invoked for rough interfaces and large M s (deposit on oxide). This contribution is consistent with a dipolar surface anisotropy term and increases for rough interfaces, in contrast to the Néel surface anisotropy. These opposite variations may interestingly lead to an enhanced anisotropy in (Co / Pt) stackings grown on oxides compared to systems deposited on Pt, i.e. with sharper interfaces. PMID:27351776

  7. Impact of buffer layer and Pt thickness on the interface structure and magnetic properties in (Co/Pt) multilayers

    NASA Astrophysics Data System (ADS)

    Bersweiler, M.; Dumesnil, K.; Lacour, D.; Hehn, M.

    2016-08-01

    The influence of Pt thickness on the interface structure (roughness / intermixing) and magnetic properties has been investigated for (Co / Pt) multilayers sputtered on a Pt or a thin oxide (MgO or AlO x ) buffer layer. When Pt thickness increases from 1.2 nm–2.2 nm, we observe that the effective anisotropy increases with the Pt thickness, simultaneously with the decrease of roughness, i.e. the occurrence of sharper interfaces. Perpendicular magnetic anisotropy (PMA) is still achieved on the oxide buffer layers, but with a lower effective anisotropy correlated to more perturbed interfaces. The detailed analysis of the saturation magnetization shows that: (i) M s is significantly enhanced in the case of rough/intermixed interfaces, which is attributed to and discussed in the framework of Pt induced polarization, (ii) the change in volume dipolar anisotropy is the main factor responsible for the reduction of K eff for systems grown on oxides. Beyond the major role of volume dipolar contribution that reduces PMA, a supplemental positive contribution promoting PMA can be invoked for rough interfaces and large M s (deposit on oxide). This contribution is consistent with a dipolar surface anisotropy term and increases for rough interfaces, in contrast to the Néel surface anisotropy. These opposite variations may interestingly lead to an enhanced anisotropy in (Co / Pt) stackings grown on oxides compared to systems deposited on Pt, i.e. with sharper interfaces.

  8. Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thick a-plane AlN films grown on r-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Lin, Chia-Hung; Tamaki, Shinya; Yamashita, Yasuhiro; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-08-01

    10-µm-thick a-plane AlN(11\\bar{2}0) films containing a low-temperature AlN (LT-AlN) buffer layer and a high-temperature AlN (HT-AlN) film were prepared on r-plane sapphire (1\\bar{1}02) substrates. The crystallinity of all the samples with different LT-AlN buffer layer thicknesses was improved after thermal annealing and HT-AlN growth, mainly owing to the elimination of domain boundaries and the concurrent suppression of facet formation. The optimum crystallinity of HT-AlN films was obtained with full widths at half maximum of the X-ray rocking curves of 660 arcsec for AlN(11\\bar{2}0)\\parallel [1\\bar{1}00]AlN and 840 arcsec for (0002) using a 200-nm-thick LT-AlN buffer layer.

  9. Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

    SciTech Connect

    Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.

    2007-02-05

    Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers.

  10. Growth of thick La2Zr2O7 buffer layers for coated conductors by polymer-assisted chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Xin; Zhao, Yong; Xia, Yudong; Guo, Chunsheng; Cheng, C. H.; Zhang, Yong; Zhang, Han

    2015-06-01

    La2Zr2O7 (LZO) epitaxial films have been deposited on LaAlO3 (LAO) (1 0 0) single-crystal surface and bi-axially textured NiW (2 0 0) alloy substrate by polymer-assisted chemical solution deposition, and afterwards studied with XRD, SEM and AFM approaches. Highly in-plane and out-of-plane oriented, dense, smooth, crack free and with a sufficient thickness (>240 nm) LZO buffer layers have been obtained on LAO (1 0 0) single-crystal surface; The films deposited on NiW (2 0 0) alloy substrate are also found with high degree in-plane and out-of-plane texturing, good density with pin-hole-free, micro-crack-free nature and a thickness of 300 nm. Highly epitaxial 500 nm thick YBa2Cu3O7-x (YBCO) thin film exhibits the self-field critical current density (Jc) reached 1.3 MA/cm2 at 77 K .These results demonstrate the LZO epi-films obtained with current techniques have potential to be a buffer layer for REBCO coated conductors.

  11. Design and characterization of thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Schulte, K. L.; Zutter, B. T.; Wood, A. W.; Babcock, S. E.; Kuech, T. F.

    2014-03-01

    Thick InxGa1-xAs metamorphic buffer layers (MBLs) grown by hydride vapor phase epitaxy (HVPE) were studied. Relationships between MBL properties and growth parameters such as grading rate, cap layer thickness, final xInAs, and deposition temperature (TD) were explored. The MBLs were characterized by measurement of in-plane residual strain (ɛ¦¦), surface etch pit density (EPD), and surface roughness. Capping layer thickness had a strong effect on strain relaxation, with thickly capped samples exhibiting the lowest ɛ¦¦. EPD was higher in samples with thicker caps, reflecting their increased relaxation through dislocation generation. ɛ¦¦ and EPD were weakly affected by the grading rate, making capping layer thickness the primary structural parameter which controls these properties. MBLs graded in discrete steps had similar properties to MBLs with continuous grading. In samples with identical thickness and 10-step grading style, ɛ¦¦ increased almost linearly with final xInAs, while total relaxation stayed relatively constant. Relaxation as a function of xInAs could be described by an equilibrium model in which dislocation nucleation is impeded by the energy of the existing dislocation array. EPD was constant from xInAs = 0 to 0.24 then increased exponentially, which is related to the increased dislocation interaction and blocking seen at higher dislocation densities. RMS roughness increased with xInAs above a certain strain rate (0.15%/µm) samples grown below this level possessed large surface hillocks and high roughness values. The elimination of hillocks at higher values of xInAs is attributed to increased density of surface steps and is related to the out-of-plane component of the burgers vector of the dominant type of 60° dislocation. TD did not affect ɛ¦¦ for samples with a given xInAs. EPD tended to increase with TD, indicating dislocation glide likely is impeded at higher temperatures.

  12. Doped LZO buffer layers for laminated conductors

    DOEpatents

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2010-03-23

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  13. Evolution of epilayer tilt in thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Schulte, K. L.; Strand, M. T.; Kuech, T. F.

    2015-09-01

    Tilt behavior in thick InxGa1-xAs metamorphic buffer layers (MBLs) grown by hydride vapor phase epitaxy (HVPE) was measured by high-resolution reciprocal space mapping. Step-graded and continuously-graded structures, grown on nominally (001) oriented GaAs substrates, were analyzed. Tilt was measured as a function of position in a step-graded MBL. It was found that the tilt was strongest near the edges and tended to point toward the sample center. Step-grading induced a nearly linear tilt increase with xInAs, while tilt increased slowly below xInAs~0.10 then increased more sharply with In concentration in continuously-graded samples. The tilt behavior could be described by a model in which the tilt is attributed to imbalances in dislocations that result from cross-slip within a glide length of the sample edge. This finding implies that dislocation multiplication by cross slip is an important strain relief mechanism during the growth of these MBLs. Strategies for minimizing tilt in HVPE MBLs are discussed.

  14. Buffer layer for thin film structures

    DOEpatents

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2010-06-15

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  15. Buffer layer for thin film structures

    DOEpatents

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2006-10-31

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  16. Thick (>20 µm) and high-resistivity carbon-doped GaN-buffer layers grown by metalorganic vapor phase epitaxy on n-type GaN substrates

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Tomonobu; Terano, Akihisa; Mochizuki, Kazuhiro

    2016-05-01

    To improve the performance of GaN power devices, we have investigated the crystalline quality of thick (>20 µm) carbon-doped GaN layers on n-type GaN substrates and templates. The surface morphologies and X-ray rocking curves of carbon-doped GaN layers were improved by using GaN substrates. However, the crystalline quality degraded when the carbon concentration was too high (1 × 1020 cm‑3), even in the case of GaN substrates. High breakdown voltages (approximately 7 kV under a lateral configuration) were obtained for the carbon-doped GaN layers on n-type GaN substrates when the carbon concentration was 5 × 1019 cm‑3. These results indicate that lateral power devices with high breakdown voltage can be fabricated by using thick carbon-doped GaN buffer layers, even on n-type GaN substrates.

  17. Photo-induced wettability of TiO{sub 2} film with Au buffer layer

    SciTech Connect

    Purkayastha, Debarun Dhar; Sangani, L. D. Varma; Krishna, M. Ghanashyam; Madhurima, V.

    2014-04-24

    The effect of thickness of Au buffer layer (15-25 nm) between TiO{sub 2} film and substrate on the wettability of TiO{sub 2} films is reported. TiO{sub 2} films grown on Au buffer layer have a higher contact angle of 96-;100° as compared to 47.6o for the film grown without buffer layer. The transition from hydrophobicity to hydrophilicity under UV irradiation occurs within 10 min. for the buffer layered films whereas it is almost 30 min. for the film grown without buffer layer. The enhanced photo induced hydrophilicity is shown to be surface energy driven.

  18. Buffer layers for coated conductors

    DOEpatents

    Stan, Liliana; Jia, Quanxi; Foltyn, Stephen R.

    2011-08-23

    A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.

  19. Leakage effects in n-GaAs MESFET with n-GaAs buffer layer

    NASA Technical Reports Server (NTRS)

    Wang, Y. C.; Bahrami, M.

    1983-01-01

    Whereas improvement of the interface between the active layer and the buffer layer has been demonstrated, the leakage effects can be important if the buffer layer resistivity is not sufficiently high and/or the buffer layer thickness is not sufficiently small. It was found that two buffer leakage currents exist from the channel under the gate to the source and from drain to the channel in addition to the buffer leakage resistance between drain and source. It is shown that for a 1 micron gate-length n-GaAs MESFET, if the buffer layer resistivity is 12 OHM-CM and the buffer layer thickness h is 2 microns, the performance of the device degrades drastically. It is suggested that h should be below 2 microns.

  20. Buffer layers on biaxially textured metal substrates

    DOEpatents

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2001-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  1. Electrodeposited Biaxially Textured Buffer Layers for YBCO Superconductors

    SciTech Connect

    Bhattacharya, R.; Phok, S.; Zhao, W.; Norman, A.

    2009-06-01

    Non-vacuum electrodeposition (ED) was used to prepare simplified Gd{sub 2}O{sub 3}/Gd{sub 2}Zr{sub 2}O{sub 7} and CeO{sub 2}/Gd{sub 2}Zr{sub 2}O{sub 7} buffer layers on a Ni-W substrate. Post-annealing conditions of electrodeposited precursor films were optimized to obtain high-quality biaxially textured buffer layers. The buffer layers were characterized by X-ray diffraction, optical profiling, and transmission electron microscopy (TEM). The effect of the cap layer thickness on the surface morphology and texture of the buffers was also studied. The microstructure of CeO{sub 2}/Gd{sub 2}Zr{sub 2}O{sub 7} was analyzed and compared to Gd{sub 2}O{sub 3}/Gd{sub 2}Zr{sub 2}O{sub 7}. The high-resolution TEM shows biaxially textured crystalline elctrodeposited Gd{sub 2}O{sub 3} and CeO{sub 2} cap layers on the electrodeposited Gd{sub 2}Zr{sub 2}O{sub 7} layers without any defects. YBa{sub 2}Cu{sub 3}O{sub 7}-delta (YBCO) superconductor was deposited by pulsed laser deposition (PLD) on the simplified ED-Gd{sub 2}O{sub 3}/Gd{sub 2}Zr{sub 2}O{sub 7} and ED-CeO{sub 2}/Gd{sub 2}Zr{sub 2}O{sub 7} buffers. Transport current density of 3.3 MA/cm{sup 2} at 77 K was obtained for PLD YBCO deposited on ED-Gd{sub 2}O{sub 3}/Gd{sub 2}Zr{sub 2}O{sub 7} buffer layers.

  2. buffer Layer Growth, the Thickness Dependence of Jc in Coated Conductors, Local Identification of Current Limiting Mechanisms and Participation in the Wire Development Group

    SciTech Connect

    Larbalestier, David; Hellstron, Eric; Abraimov, Dmytro

    2011-12-17

    The primary thrusts of our work were to provide critical understanding of how best to enhance the current-carrying capacity of coated conductors. These include the deconstruction of Jc as a function of fim thickness, the growth of in situ films incorporating strong pinning centers and the use of a suite of position-sensitive tools that enable location and analysis of key areas where current-limiting occurs.

  3. An ultra-thin buffer layer for Ge epitaxial layers on Si

    SciTech Connect

    Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K.; Sawano, K.

    2013-03-25

    Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

  4. Aerosol buffering of marine boundary layer cloudiness

    NASA Astrophysics Data System (ADS)

    Kazil, J.; Feingold, G.; Wang, H.

    2010-12-01

    The role of aerosol particles in maintaining a cloudy boundary layer in the remote marine environment is explored. It has previously been shown that precipitation can result in the transition from a closed- to open-cellular state but that the boundary layer cannot maintain this open-cell state without a resupply of particles. Potential sources include wind-driven production of sea salt particles from the ocean, nucleation from the gas phase, and entrainment from the free troposphere. Here we investigate with model simulations how the interplay of cloud properties, aerosol production, and boundary layer dynamics results in aerosol sources acting as a buffer against processes that destabilize cloudiness and the dynamic state of the marine boundary layer. For example, at nighttime, cloud liquid water increases in the absence of solar heating, resulting in increased precipitation, stronger cloud top cooling, accelerated boundary layer turbulence, and faster surface wind speeds. Faster surface wind speeds drive an enhanced flux of sea salt aerosol, at a time when aerosol particles are scavenged more readily by enhanced precipitation. In contrast, absorption of solar radiation during daytime reduces cloud water, decelerates boundary layer turbulence, reduces surface wind speeds, and therefore slows surface emissions. This is compensated by nucleation of small aerosol particles from the gas phase in response to the nigh complete removal of cloud condensation nuclei in precipitating open cell walls. These newly formed particles need to grow to larger sizes before they can serve as cloud condensation nuclei (CCN), but will likely contribute to the CCN population during the nighttime and, together with ocean emissions, buffer the system against precipitation removal.

  5. Buffer layers and articles for electronic devices

    DOEpatents

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  6. Back contact buffer layer for thin-film solar cells

    DOEpatents

    Compaan, Alvin D.; Plotnikov, Victor V.

    2014-09-09

    A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

  7. Effect of buffer layer on the voltage responsivity of the pyroelectric thermal sensors prepared with PZT ceramics

    NASA Astrophysics Data System (ADS)

    Lee, Moon-Ho; Hwang, Ha R.; Bae, Seong-Ho

    1997-08-01

    The pyroelectric thermal detectors were prepared with lead zirconate titanate (PZT) ceramics, where a signal electrode had a structure of Au/metallic buffer/(PZT ceramic). The effect of buffer layer on the voltage responsivity was investigated with a response to step signal, taken by dynamic pyroelectric measurement. Pyroelectric ceramic wafer was prepared by mixed oxide technique. Au layer (thickness: 50 nm) and metallic buffers (thickness: 0 - 20 nm) of Cr, NiCr (80/20), and Ti were prepared by dc magnetron sputtering. In order to improve the light absorptivity, an Au-black was coated on Au signal electrode by thermal evaporation. At steady state, the output voltage (Vo) was decreased with increasing chopping frequency in the range of 1 - 100 Hz. A sensor without buffer showed the severe time-drift and instability in the output signal. However, the sensors with buffer layer showed the stable outputs. For step radiations, rising time (tp), peak voltage (Vp), and initial slope (k) of the output voltage were dependent upon the thickness and materials of buffer layer. The mechanical and electrical contacts between Au electrode and PZT ceramics were improved by inserting the metallic buffer layer. Considering the characteristics of the output voltage, the optimum thickness of buffer layer was about 15 - 20 nm, and the sensors with Ti buffer of 15 - 20 nm in thickness showed the good detectivity. Therefore, the stability and reliability of the thermal sensors could be improved by use of appropriate buffer layer.

  8. Effect of Oxide Buffer Layer on the Thermochromic Properties of VO2 Thin Films

    NASA Astrophysics Data System (ADS)

    Koo, Hyun; Xu, Lu; Ko, Kyeong-Eun; Ahn, Seunghyun; Chang, Se-Hong; Park, Chan

    2013-12-01

    VO2 thin films were deposited on soda lime glass substrates with ZnO, TiO2, SnO2, and CeO2 thin films applied as buffer layers between the VO2 films and the substrates in order to investigate the effect of buffer layer on the formation and the thermochromic properties of VO2 film. Buffer layers with thicknesses over 50 nm were found to affect the formation of VO2 film, which was confirmed by XRD spectra. By using ZnO, TiO2, and SnO2 buffer layers, monoclinic VO2 (VO2(M)) film was successfully fabricated on soda lime glass at 370 °C. On the contrary, films of VO2(B), which is known to have no phase transition near room temperature, were formed rather than VO2(M) when the film was deposited on CeO2 buffer layer at the same film deposition temperature. The excellent thermochromic properties of the films deposited on ZnO, TiO2, and SnO2 buffer layers were confirmed from the temperature dependence of electrical resistivity from room temperature to 80 °C. Especially, due to the tendency of ZnO thin film to grow with a high degree of preferred orientation on soda lime glass at low temperature, the VO2 film deposited on ZnO buffer layer exhibits the best thermochromic properties compared to those on other buffer layer materials used in this study. These results suggest that deposition of VO2 films on soda lime glass at low temperature with excellent thermochromic properties can be achieved by considering the buffer layer material having structural similarity with VO2. Moreover, the degree of crystallization of buffer layer is also related with that of VO2 film, and thus ZnO can be one of the most effective buffer layer materials.

  9. 1,3,5-Tris(phenyl-2-benzimidazole)-benzene cathode buffer layer thickness dependence in solution-processable organic solar cell based on 1,4,8,11,15,18,22,25-octahexylphthalocyanine

    NASA Astrophysics Data System (ADS)

    De Roméo Banoukepa, Gilles; Fujii, Akihiko; Shimizu, Yo; Ozaki, Masanori

    2015-04-01

    Studies on the insertion effects of a cathode buffer layer on bulk heterojunction organic solar cell based on 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH2) and 1-(3-methoxy-carbonyl)-propyl-1-1-phenyl-(6,6)C61 (PCBM) by using 1,3,5-tris(phenyl-2-benzimidazole)-benzene (TPBi) as a cathode buffer layer material have been carried out. The external quantum efficiency and the short-circuit current markedly increased, resulting in the enhancement of the power conversion efficiency. The solar cell performance has been discussed from the atomic force microscopy, photoelectron yield spectroscopy and X-ray photoelectron spectroscopy measurements.

  10. Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

    NASA Astrophysics Data System (ADS)

    Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

    2016-02-01

    The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

  11. Buffer layers for REBCO films for use in superconducting devices

    DOEpatents

    Goyal, Amit; Wee, Sung-Hun

    2014-06-10

    A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

  12. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOEpatents

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  13. Buffer layers on metal alloy substrates for superconducting tapes

    DOEpatents

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-10-05

    An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected I.sub.c 's of over 200 Amperes across a sample 1 cm wide.

  14. Mitigation of substrate defects in reticles using multilayer buffer layers

    DOEpatents

    Mirkarimi, Paul B.; Bajt, Sasa; Stearns, Daniel G.

    2001-01-01

    A multilayer film is used as a buffer layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The multilayer buffer layer deposited intermediate the reticle substrate and the reflective coating produces a smoothing of small particles and other defects on the reticle substrate. The reduction in defect size is controlled by surface relaxation during the buffer layer growth process and by the degree of intermixing and volume contraction of the materials at the multilayer interfaces. The buffer layers are deposited at near-normal incidence via a low particulate ion beam sputtering process. The growth surface of the buffer layer may also be heated by a secondary ion source to increase the degree of intermixing and improve the mitigation of defects.

  15. Magneto-optical properties of Co /Ge(100) with ultrathin Ag buffer layers

    NASA Astrophysics Data System (ADS)

    Su, C. W.; Tsay, J. S.; Hwang, C. H.; Yao, Y. D.

    2005-05-01

    Magnetic properties of Co films (<2nm) with Ag buffer layers (<0.7nm) grown on Ge(100) at room temperature and 200K were studied by surface magneto-optical Kerr effect. Without the buffer, the films reveal in-plane magnetic anisotropy even Co and Ge forms nonmagnetic interfacial alloys. The hysteresis due to intercalation of Ag can be detected at thinner Co thicknesses. The buffer can effectively cutoff the intermixing of Co and Ge. As the thickness of Ag is reduced, out-of-plane magnetic anisotropy due to the interface interactions between Co /Ag and Co /Ge was discovered and was only at 200K.

  16. Methods for improved growth of group III nitride buffer layers

    DOEpatents

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  17. Controlling optical polarization of {11-22} semipolar multiple quantum wells using relaxed underlying InGaN buffer layers

    NASA Astrophysics Data System (ADS)

    Okada, Narihito; Okamura, Yasuhiro; Uchida, Katsumi; Tadatomo, Kazuyuki

    2016-08-01

    We successfully fabricated {11-22} multiple quantum wells (MQWs) having different emission peak wavelengths on partially or completely relaxed thick InGaN buffer layers with different In contents formed on a semipolar {11-22} GaN layer, which was grown on a patterned r-plane sapphire substrate. The polarization properties changed significantly with changing in In content and thickness for InGaN buffer layer. For the same In content of the InGaN buffer layer, the optical polarization changed with an increase in the thickness of the underlying InGaN buffer layer, indicating a change in the relaxation ratio of the InGaN buffer layer. Similarly, for the same thickness of the InGaN buffer layer, the optical polarization changed by changing In content of the InGaN buffer layer. Thus, the degree of optical polarization could be controlled by varying the In content of the underlying InGaN buffer layer.

  18. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOEpatents

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2001-01-01

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  19. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    SciTech Connect

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2004-01-27

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  20. Buffer layer effect on ZnO nanorods growth alignment

    NASA Astrophysics Data System (ADS)

    Zhao, Dongxu; Andreazza, Caroline; Andreazza, Pascal; Ma, Jiangang; Liu, Yichun; Shen, Dezhen

    2005-06-01

    Vertical aligned ZnO nanorods array was fabricated on Si with introducing a ZnO thin film as a buffer layer. Two different nucleation mechanisms were found in growth process. With using Au catalyst, Zn vapor could diffuse into Au nanoclusters with forming a solid solution. Then the ZnO nucleation site is mainly on the catalyst by oxidation of Au/Zn alloy. Without catalyst, nucleation could occur directly on the surface of buffer layer by homoepitaxy. The density and the size of ZnO nanorods could be governed by morphological character of catalyst and buffer layer. The nanorods growth is followed by vapor-solid mechanism.

  1. On buffer layers as non-reflecting computational boundaries

    NASA Technical Reports Server (NTRS)

    Hayder, M. Ehtesham; Turkel, Eli L.

    1996-01-01

    We examine an absorbing buffer layer technique for use as a non-reflecting boundary condition in the numerical simulation of flows. One such formulation was by Ta'asan and Nark for the linearized Euler equations. They modified the flow inside the buffer zone to artificially make it supersonic in the layer. We examine how this approach can be extended to the nonlinear Euler equations. We consider both a conservative and a non-conservative form modifying the governing equations in the buffer layer. We compare this with the case that the governing equations in the layer are the same as in the interior domain. We test the effectiveness of these buffer layers by a simulation of an excited axisymmetric jet based on a nonlinear compressible Navier-Stokes equations.

  2. Buffer layers for high-Tc thin films on sapphire

    NASA Technical Reports Server (NTRS)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  3. Degradation Characteristics of MgO Based Magnetic Tunnel Junction Caused by Surface Roughness of Ta/Ru Buffer Layers.

    PubMed

    Lee, Jung Min; Choi, Chul Min; Sukegawa, Hiroaki; Lee, Jeong Yong; Mitani, Seiji; Song, Yun-Heub

    2016-01-01

    We investigated how surface roughness of a Ta/Ru buffer layer affects the degradation characteristics on MgO-based magnetic tunnel junctions (MTJs). MTJs with worse surface roughness on the buffer layer showed increased resistance drift and degraded time-dependent dielectric breakdown (TDDB) characteristics. We suggest that this resulted from reduced MgO thickness on the MTJ with worse surface roughness on the buffer layer, which was estimated by the TDDB and analytic approach. As a result, surface roughness of the buffer layer is a critical factors that impacts the reliability of MTJs, and it should be controlled to have the smallest roughness value as possible. PMID:27398503

  4. Rare earth zirconium oxide buffer layers on metal substrates

    DOEpatents

    Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

    2001-01-01

    A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  5. GaAs buffer layer technique for vertical nanowire growth on Si substrate

    SciTech Connect

    Xu, Xiaoqing Parizi, Kokab B.; Huo, Yijie; Kang, Yangsen; Philip Wong, H.-S.; Li, Yang

    2014-02-24

    Gold catalyzed vapor-liquid-solid method is widely applied to III–V nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely limit its controllability. In this work, we developed a buffer layer technique by introducing a GaAs thin film with predefined polarity as a template. It is found that samples grown on these buffer layers all have high vertical NW yields in general, due to the single-orientation of the buffer layers. Low temperature buffer with smoother surface leads to highest yield of vertical NWs, while high temperature (HT) buffer with better crystallinity results in perfect NW quality. The defect-free property we observed here is very promising for optoelectronic device applications based on GaAs NW. Moreover, the buffer layers can eliminate Si contamination by preventing Si-Au alloy formation and by increasing the thickness of the Si diffusion barrier, thus providing more flexibility to vertical NW growth. The buffer layer technique we demonstrated here could be easily extended to other III-V on Si system for electronic and photonic applications.

  6. Method of depositing buffer layers on biaxially textured metal substrates

    DOEpatents

    Beach, David B.; Morrell, Jonathan S.; Paranthaman, Mariappan; Chirayil, Thomas; Specht, Eliot D.; Goyal, Amit

    2002-08-27

    A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  7. Hafnium nitride buffer layers for growth of GaN on silicon

    DOEpatents

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  8. Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness

    NASA Astrophysics Data System (ADS)

    Çörekçi, S.; Dugan, S.; Öztürk, M. K.; Çetin, S. Ş.; Çakmak, M.; Özçelik, S.; Özbay, E.

    2016-05-01

    Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and Hall-effect measurements. The symmetric (0002) plane with respect to the asymmetric (10bar{1} 2) plane in the 280-nm-thick AlN buffer has a higher crystal quality, as opposed to the 400-nm-thick buffer. The thinner buffer improves the crystallinity of both (0002) and (10bar{1} 2) planes in the GaN layers, it also provides a sizeable reduction in dislocation density of GaN. Furthermore, the lower buffer thickness leads to a good quality surface with an rms roughness of 0.30 nm and a dark spot density of 4.0 × 108 cm-2. The optical and transport properties of the AlInN/AlN/GaN structure with the relatively thin buffer are compatible with the enhancement in its structural quality, as verified by XRD and AFM results.

  9. Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness

    NASA Astrophysics Data System (ADS)

    Çörekçi, S.; Dugan, S.; Öztürk, M. K.; Çetin, S. Ş.; Çakmak, M.; Özçelik, S.; Özbay, E.

    2016-07-01

    Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and Hall-effect measurements. The symmetric (0002) plane with respect to the asymmetric (10bar{1}2) plane in the 280-nm-thick AlN buffer has a higher crystal quality, as opposed to the 400-nm-thick buffer. The thinner buffer improves the crystallinity of both (0002) and (10bar{1}2) planes in the GaN layers, it also provides a sizeable reduction in dislocation density of GaN. Furthermore, the lower buffer thickness leads to a good quality surface with an rms roughness of 0.30 nm and a dark spot density of 4.0 × 108 cm-2. The optical and transport properties of the AlInN/AlN/GaN structure with the relatively thin buffer are compatible with the enhancement in its structural quality, as verified by XRD and AFM results.

  10. Buffer layers on metal alloy substrates for superconducting tapes

    DOEpatents

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-06-29

    An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

  11. Growth of InSb on GaAs Using InAlSb Buffer Layers

    SciTech Connect

    BIEFELD, ROBERT M.; PHILLIPS, JAMIE D.

    1999-09-20

    We report the growth of InSb on GaAs using InAlSb buffers of high interest for magnetic field sensors. We have grown samples by metal-organic chemical vapor deposition consisting of {approximately} 0.55 {micro}m thick InSb layers with resistive InAlSb buffers on GaAs substrates with measured electron nobilities of {approximately}40,000 cm{sup 2}/V.s. We have investigated the In{sub 1{minus}x}Al{sub x}Sb buffers for compositions x{le}0.22 and have found that the best results are obtained near x=0.12 due to the tradeoff of buffer layer bandgap and lattice mismatch.

  12. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOEpatents

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  13. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOEpatents

    Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

    2004-08-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

  14. CoFe2O4/buffer layer ultrathin heterostructures on Si(001)

    NASA Astrophysics Data System (ADS)

    Bachelet, R.; de Coux, P.; Warot-Fonrose, B.; Skumryev, V.; Fontcuberta, J.; Sánchez, F.

    2011-10-01

    Epitaxial films of ferromagnetic CoFe2O4 (CFO) were grown by pulsed laser deposition on Si(001) buffered with ultrathin yttria-stabilized zirconia (YSZ) layers in a single process. Reflection high-energy electron diffraction was used to monitor in real time the crystallization of YSZ, allowing the fabrication of epitaxial YSZ buffers with thickness of about 2 nm. CFO films, with thicknesses in the 2-50 nm range were subsequently deposited. The magnetization of the CFO films is close to the bulk value. The ultrathin CFO/YSZ heterostructures have very flat morphology (0.1 nm roughness) and thin interfacial SiOx layer (about 2 nm thick) making them suitable for integration in tunnel (e.g., spin injection) devices.

  15. Substrate surface treatment and YSZ buffer layers by IBAD method for coated conductors

    NASA Astrophysics Data System (ADS)

    Feng, F.; Liu, R.; Chen, H.; Shi, K.; Wang, Z.; Wu, W.; Han, Z.

    2009-10-01

    In this work, an Ion Beam Assisted Deposition (IBAD) system was utilized to fabricate Yttria-Stabilized Zirconia (YSZ) template films for coated conductors. The surface of the Hastelloy C276 substrate was modified by rolling and electropolishing. The effect of the electropolishing parameters of the substrate on the texture of the YSZ buffer layers was studied. The electropolishing current and time were optimized for short samples of 1 cm×1 cm square shape as 1 A and 60 s, respectively. And the relationship between the roughness of the substrate surface and the texture of the YSZ layer is discussed. Reel-to-reel metal tape moving apparatus was installed and used to produce meter-long buffer layer for coated conductors. The YSZ template film was deposited by IBAD method on meter-long Hastelloy tape with tape shifting speed of 15-20 m/h, and the thickness of the buffer layer was up to about 1.7 μm. The Hastelloy substrate surface was measured by Atomic Force Microscope. The thickness of the YSZ films over length was measured by Thermal Field Emission Scan Electronic Microscopy. X Ray Diffraction Ω-scan and ϕ-scan measurements were performed in order to examine the out-of-plane and in-plane texture of the YSZ buffer layers, respectively.

  16. Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Linder, K. K.; Zhang, F. C.; Rieh, J.-S.; Bhattacharya, P.

    1997-05-01

    Several types of buffer layer structures, including superlattice and step-graded layers, have been employed to reduce the threading dislocation in SiGe epitaxial layers. A new technique, using a 0.1 μm thick Si buffer grown at 450°C by molecular beam epitaxy, provides the best results. For a 0.5 μm thick Si 0.85Ge 0.15 layer, the dislocation density is ⩽ 10 5cm -2. Hall measurements indicate an improvement in the hole mobility of a 1 μm thick Boron doped Si 0.7Ge 0.3 layer. A {SiGe}/{Si} heterojunction bipolar transistor has been fabricated exploiting the low temperature Si buffer. Transmission electron microscopy of the structure does not indicate any evidence of threading dislocations.

  17. Thickness-Dependent Properties of YBCO Films Grown on GZO/CLO-Buffered NiW Substrates

    NASA Astrophysics Data System (ADS)

    Malmivirta, M.; Huhtinen, H.; Zhao, Y.; Grivel, J.-C.; Paturi, P.

    2016-07-01

    To study the role of novel Gd_2 Zr_2 O_7 /Ce_{0.9} La_{0.1} O_2 buffer layer structure on a biaxially textured NiW substrate, a set of YBa_2 Cu_3 O_{7-δ } (YBCO) films with different thicknesses were prepared by pulsed laser deposition (PLD). Interface imperfections as well as thickness-dependent structural properties were observed in the YBCO thin films. The structure is also reflected into the improved superconducting properties with the highest critical current densities in films with intermediate thicknesses. Therefore, it can be concluded that the existing buffer layers need more optimization before they can be successfully used for films with various thicknesses. This issue is linked to the extremely susceptible growth method of PLD when compared to the commonly used chemical deposition methods. Nevertheless, PLD-grown films can give a hint on what to concentrate to be able to further improve the buffer layer structures for future coated conductor technologies.

  18. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect

    Nandi, R. Mohan, S. Major, S. S.; Srinivasa, R. S.

    2014-04-24

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  19. Formation of CeO 2 buffer layer using multi-plume PLD

    NASA Astrophysics Data System (ADS)

    Sutoh, Y.; Nakaoka, K.; Miura, M.; Matsuda, J.; Nakanishi, T.; Nakai, A.; Yoshizumi, M.; Izumi, T.; Miyata, S.; Iijima, Y.; Yamada, Y.; Shiohara, Y.; Saitoh, T.

    2008-09-01

    The CeO 2 buffer layer was fabricated using the multi-plume pulsed laser deposition (PLD) method with different deposition rates controlled by the excimer laser energy and frequency on the Gd 2Zr 2O 7 template tape formed by the ion-beam assisted deposition (IBAD) with 14° of Δ φ (full width at half maximum (FWHM) value of X-ray diffraction φ-scan for Gd 2Zr 2O 7 (2 2 2) pole). The laser conditions with high pulse energy and low frequency resulted in a highly textured in-plane grain alignment (Δ φ). The surface roughness and Δ φ values were improved by increasing the thickness of the CeO 2 buffer layer. YBCO films with the thickness of 1 μm and 1.6 μm were further deposited by the advanced trifluoroacetates-metal organic deposition (TFA-MOD) on the CeO 2 buffered substrates with the deposition rate of 0.15 and 0.5 μm/min. The Jc values of 2.5 MA/cm 2 and 2 MA/cm 2 were obtained, respectively. High Jc films could be deposited on the CeO 2 buffer layer even at high deposition rate by the multi-plume deposition.

  20. Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

    NASA Astrophysics Data System (ADS)

    Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

    2016-09-01

    In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

  1. The growth of various buffer layer structures and their influence on the quality of (CdHg)Te epilayers

    NASA Astrophysics Data System (ADS)

    Gouws, G. J.; Muller, R. J.; Bowden, R. S.

    1993-05-01

    The suitability of various buffer layer structures on (100) GaAs for (CdHg)Te growth by organometallic vapour phase epitaxy (OMVPE) was investigated. The preferred epitaxial orientation of {(100)GaAs}/{(111)CdTe} was found to be unsuitable due to the formation of electrically active defects in the material. An intermediate ZnTe layer was used to select the (100) orientation and (100) CdTe layers were when deposited on this ZnTe layer. The quality of the resultant CdTe buffer was found to critically depend on the thickness of this intermediate ZnTe buffer, with a ZnTe thickness of approximately 500 Å producing the best CdTe buffer. (CdHg)Te epilayers grown on these {ZnTe}/{CdTe} buffers had improved electrical properties, but still suffered from a poor surface morphology. This surface morphology could be improved by using a lattice matched Cd 0.96Zn 0.04Te alloy as the final buffer layer, but the surface pyramids typical of the (100) orientation could never be completely eliminated.

  2. Improved nonlinear slot waveguides using dielectric buffer layers: properties of TM waves.

    PubMed

    Elsawy, Mahmoud M R; Renversez, Gilles

    2016-04-01

    We propose an improved version of the symmetric metal slot waveguides with a Kerr-type nonlinear dielectric core adding linear dielectric buffer layers between the metal regions and the core. Using a finite element method to compute the stationary nonlinear modes, we provide the full phase diagrams of its main transverse magnetic modes as a function of the total power, buffer layer, and core thicknesses that are more complex than the ones of the simple nonlinear metal slot. We show that these modes can exhibit spatial transitions toward specific modes of the new structure as a function of power. We also demonstrate that, for the main modes, the losses are reduced compared to the previous structures, and that they can now decrease with power. Finally, we describe the stability properties of the main stationary solutions using nonlinear FDTD simulations. PMID:27192282

  3. Buffer influence on magnetic dead layer, critical current, and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Frankowski, Marek; Żywczak, Antoni; Czapkiewicz, Maciej; Zietek, Sławomir; Kanak, Jarosław; Banasik, Monika; Powroźnik, Wiesław; Skowroński, Witold; Checiński, Jakub; Wrona, Jerzy; Głowiński, Hubert; Dubowik, Janusz; Ansermet, Jean-Philippe; Stobiecki, Tomasz

    2015-06-01

    We present a detailed study of Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of Magnetic Tunnel Junctions (MTJs) such as critical switching current and thermal stability. We study buffer/FeCoB/MgO/Ta/Ru and buffer/MgO/FeCoB/Ta/Ru layers, investigating the crystallographic texture, the roughness of the buffers, the magnetic domain pattern, the magnetic dead layer thickness, and the perpendicular magnetic anisotropy fields for each sample. Additionally, we examine the effect of the current induced magnetization switching for complete nanopillar MTJs with lateral dimensions of 270 × 180 nm. Buffer Ta 5/Ru 10/Ta 3 (thicknesses in nm), which has the thickest dead layer, exhibits a much larger thermal stability factor (63 compared to 32.5) while featuring a slightly lower critical current density value (1.25 MA/cm2 compared to 1.5 MA/cm2) than the buffer with the thinnest dead layer Ta 5/Ru 20/Ta 5. We can account for these results by considering the difference in damping which compensates for the difference in the switching barrier heights.

  4. Effect of Alloy 625 Buffer Layer on Hardfacing of Modified 9Cr-1Mo Steel Using Nickel Base Hardfacing Alloy

    NASA Astrophysics Data System (ADS)

    Chakraborty, Gopa; Das, C. R.; Albert, S. K.; Bhaduri, A. K.; Murugesan, S.; Dasgupta, Arup

    2016-04-01

    Dashpot piston, made up of modified 9Cr-1Mo steel, is a part of diverse safety rod used for safe shutdown of a nuclear reactor. This component was hardfaced using nickel base AWS ER NiCr-B alloy and extensive cracking was experienced during direct deposition of this alloy on dashpot piston. Cracking reduced considerably and the component was successfully hardfaced by application of Inconel 625 as buffer layer prior to hardface deposition. Hence, a separate study was undertaken to investigate the role of buffer layer in reducing the cracking and on the microstructure of the hardfaced deposit. Results indicate that in the direct deposition of hardfacing alloy on modified 9Cr-1Mo steel, both heat-affected zone (HAZ) formed and the deposit layer are hard making the thickness of the hard layer formed equal to combined thickness of both HAZ and deposit. This hard layer is unable to absorb thermal stresses resulting in the cracking of the deposit. By providing a buffer layer of Alloy 625 followed by a post-weld heat treatment, HAZ formed in the modified 9Cr-1Mo steel is effectively tempered, and HAZ formed during the subsequent deposition of the hardfacing alloy over the Alloy 625 buffer layer is almost completely confined to Alloy 625, which does not harden. This reduces the cracking susceptibility of the deposit. Further, unlike in the case of direct deposition on modified 9Cr-1Mo steel, dilution of the deposit by Ni-base buffer layer does not alter the hardness of the deposit and desired hardness on the deposit surface could be achieved even with lower thickness of the deposit. This gives an option for reducing the recommended thickness of the deposit, which can also reduce the risk of cracking.

  5. Investigation of hole injection enhancement by MoO{sub 3} buffer layer in organic light emitting diodes

    SciTech Connect

    Haitao, Xu; Xiang, Zhou

    2013-12-28

    An MoO{sub 3} buffer layer prepared by thermal evaporation as hole injection layer was investigated in organic light emitting diodes. The MoO{sub 3} film inserted between the anode and hole transport layer decreased the operating voltage and enhanced power efficiency. Introduction of 1 nm MoO{sub 3} film, which was found to be the optimum layer thickness, resulted in 45% increase in efficiency compared with traditional ITO anode. Results from atomic force microscopy and photoemission spectroscopy showed that smooth surface morphology and suitable energy level alignment of ITO/MoO{sub 3} interface facilitated hole injection and transport. The hole injection and transport mechanism at the ITO/MoO{sub 3} interface in thin and thick buffer layers were analyzed.

  6. Cobalt disilicide buffer layer for YBCO film on silicon

    SciTech Connect

    Belousov, I.; Rudenko, E.; Linzen, S.; Seidel, P.

    1997-02-01

    The CoSi{sub 2} films were used as buffer layers of YBCO/CoSi{sub 2}/Si(100), YBCO/ZrO{sub 2}/CoSi{sub 2}/Si(100) and YBCO/CeO{sub 2}/YSZ/CoSi{sub 2}/epi-Si/Al{sub 2}O{sub 3} heterostructures in this work. Transition temperatures of YBCO films were obtained up to 86K for YBCO films deposited by laser ablation on the top of CeO{sub 2}/YSZ/CoSi{sub 2}/Si/Al{sub 2}O{sub 3} structure. Local nucleation on the crystal defects of silicon, the phenomenon of lateral directed growth (DLG) and agglomeration of CoSi{sub 2} phase are responsible for grain boundaries (GB) position in CoSi{sub 2} layer and its roughness. The roughness was decreased using an additional Zr film on the top structure.

  7. Buffer layers on rolled nickel or copper as superconductor substrates

    DOEpatents

    Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /CeO.sub.2 /Ni, RE.sub.2 O.sub.3 /Ni (RE=Rare Earth), and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /CeO.sub.2 /Cu, RE.sub.2 O.sub.3 /Cu, and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approach, which includes chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

  8. Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

    NASA Astrophysics Data System (ADS)

    Monteagudo-Lerma, L.; Valdueza-Felip, S.; Núñez-Cascajero, A.; Ruiz, A.; González-Herráez, M.; Monroy, E.; Naranjo, F. B.

    2016-01-01

    We present the structural and optical properties of (0001)-oriented nanocolumnar films of InN deposited on c-sapphire substrates by radio-frequency reactive sputtering. It is observed that the column density and dimensions are highly dependent on the growth parameters of the buffer layer. We investigate four buffer layers consisting of (i) 30 nm of low-growth-rate InN, (ii) 30 nm of AlN deposited on the unbiased substrate (us), (iii) 30 nm of AlN deposited on the reverse-biased substrate (bs), and (iv) a 60-nm-thick bilayer consisting of 30-nm-thick bs-AlN deposited on top of 30-nm-thick us-AlN. Differences in the layer nucleation process due to the buffer layer induce variations of the column density in the range of (2.5-16)×109 cm-2, and of the column diameter in the range of 87-176 nm. Best results in terms of mosaicity are obtained using the bs-AlN buffer layer, which leads to a full width at half-maximum of the InN(0002) rocking curve of 1.2°. A residual compressive strain is still present in the nanocolumns. All samples exhibit room temperature photoluminescence emission at ~1.6 eV, and an apparent optical band gap at ~1.7 eV estimated from linear optical transmittance measurements.

  9. Structure and magnetic properties of ultrathin Ni films on Pt(111) with Co buffer layers

    NASA Astrophysics Data System (ADS)

    Shern, C. S.; Ho, H. Y.; Lin, S. H.; Su, C. W.

    2004-12-01

    The growth mode and the structure of ultrathin Ni films on Pt(111) with Co buffer layers were studied by low-energy electron diffraction (LEED) and Auger electron spectroscopy. The comparative study of the magnetic properties between Ni/Pt(111) and Ni/1 ML Co/Pt(111) was investigated by magneto-optical Kerr effect. The oscillation of the specular beam of LEED and the Auger uptake curve were used to calibrate the thickness of Ni overlayers and to study the growth mode of Ni thin films on 1 ML Co/Pt(111) . The study of the alloy formation for Ni/1 ML Co/Pt(111) showed that the temperature for mixing Ni and Co in the upper interface without diffusing into the bulk of Pt is independent of the thickness of Ni overlayers. By further increasing the temperature, Co and Ni diffuse into Pt bulk simultaneously to form Co-Pt , Ni-Pt , and Ni-Co-Pt alloys. The temperature of the formation of these alloys is dependent on the Ni thickness. Studies of the magnetic properties showed that the easy axis of the magnetization changed from the cant to the out-of-plane direction when the Co buffer layer was inserted on Ni/Pt(111) . The alloy formation causes some interesting changes in the polar Kerr signal. The enhancement in the out-of-plane magnetization of Ni/Co/Pt(111) is mainly contributed by the formation of Co-Pt alloy.

  10. Doped Y.sub.2O.sub.3 buffer layers for laminated conductors

    DOEpatents

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2007-08-21

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y.sub.2O.sub.3 and a dopant for blocking cation diffusion through the Y.sub.2O.sub.3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  11. A study on intermediate buffer layer of coated Fiber Bragg Grating cryogenic temperature sensors

    NASA Astrophysics Data System (ADS)

    Freitas, R.; Araujo, F.; Araujo, J.; Neumann, H.; Ramalingam, R.

    2015-12-01

    The sensor characteristics of a coated Fiber Bragg grating (FBG) thermal sensor for cryogenic temperatures depends mainly on the coating materials. The sensitivity of the coated FBG can be improved by enhancing the effective thermal strain transfer between the different layers and the bare FBG. The dual coated FBG's has a primary layer and the secondary layer. The primary coating acts as an intermediate buffer between the secondary coating and the bare FBG. The outer secondary coating is normally made of metals with high thermal expansion coefficient. In this work, a detailed study is carried out on chromium and titanium intermediate buffer layers with various coating thicknesses and combinations. To improve the sensitivity, the secondary coating layer was tested with Indium, Lead and Tin. The sensors were then calibrated in a cryogenic temperature calibration facility at Institute of Technical Physics (ITEP), Karlsruhe Institute of Technology. The sensors were subjected to several thermal cycles between 4.2 and 80 K to study the sensor performance and its thermal characteristics. The sensor exhibits a Bragg wavelength shift of 13pm at 20K. The commercially available detection equipment with a resolution of 1pm can result in a temperature resolution of 0.076 K at 20K.

  12. Improvement of the interfacial Dzyaloshinskii-Moriya interaction by introducing a Ta buffer layer

    SciTech Connect

    Kim, Nam-Hui; Jung, Jinyong; Cho, Jaehun; You, Chun-Yeol; Han, Dong-Soo; Kim, June-Seo Swagten, Henk J. M.

    2015-10-05

    We report systematic measurements of the interfacial Dzyaloshinskii-Moriya interaction (iDMI) by employing Brillouin light scattering in Pt/Co/AlO{sub x} and Ta/Pt/Co/AlO{sub x} structures. By introducing a tantalum buffer layer, the saturation magnetization and the interfacial perpendicular magnetic anisotropy are significantly improved due to the better interface between heavy metal and ferromagnetic layer. From the frequency shift between Stokes- and anti-Stokes spin-waves, we successively obtain considerably larger iDM energy densities (D{sub max} = 1.65 ± 0.13 mJ/m{sup 2} at t{sub Co} = 1.35 nm) upon adding the Ta buffer layer, despite the nominally identical interface materials. Moreover, the energy density shows an inverse proportionality with the Co layer thickness, which is the critical clue that the observed iDMI is indeed originating from the interface between the Pt and Co layers.

  13. Superconducting composite with multilayer patterns and multiple buffer layers

    DOEpatents

    Wu, X.D.; Muenchausen, R.E.

    1993-10-12

    An article of manufacture is described including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superconductor. 5 figures.

  14. Buffer effects of Ag layers on magneto-optical Co/Ge(1 0 0) ultrathin films

    NASA Astrophysics Data System (ADS)

    Su, C. W.; Tsay, J. S.; Yao, Y. D.

    2006-09-01

    Magnetic properties of the Co/Ag/Ge(1 0 0) films grown at room temperature and 200 K were studied by the surface magneto-optical Kerr effect (SMOKE). More than 1.5 monolayer Ag buffer layers not only effectively block the interdiffusion between the capped Co layers and the Ge(1 0 0) substrate but also stabilize the magnetic phase. The temperature and thickness dependence on coercivity measurements show that interactions upon the interfaces are strongly correlated to the microstructures.

  15. Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

    SciTech Connect

    Hultqvist, Adam; Bent, Stacey F.; Li, Jian V.; Kuciauskas, Darius; Dippo, Patricia; Contreras, Miguel A.; Levi, Dean H.

    2015-07-20

    Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

  16. Effect of Reaction Temperature of CdS Buffer Layers by Chemical Bath Deposition Method.

    PubMed

    Kim, Hye Jin; Kim, Chae-Woong; Jung, Duk Young; Jeong, Chaehwan

    2016-05-01

    This study investigated CdS deposition on a Cu(In,Ga)Se2 (CIGS) film via chemical bath deposition (CBD) in order to obtain a high-quality optimized buffer layer. The thickness and reaction temperature (from 50 degrees C to 65 degrees C) were investigated, and we found that an increase in the reaction temperature during CBD, resulted in a thicker CdS layer. We obtained a thin film with a thickness of 50 nm at a reaction temperature of 60 degrees C, which also exhibited the highest photoelectric conversion efficiency for use in solar cells. Room temperature time-resolved photoluminescence (TR-PL) measurements were performed on the Cu(In,Ga)Se2 (CIGS) thin film and CdS/CIGS samples to determine the recombination process of the photo-generated minority carrier. The device performance was found to be dependent on the thickness of the CdS layer. As the thickness of the CdS increases, the fill factor and the series resistance increased to 61.66% and decreased to 8.35 Ω, respectively. The best condition was observed at a reaction temperature of 60 degrees C, and its conversion efficiency was 12.20%. PMID:27483883

  17. Lattice-matched HfN buffer layers for epitaxy of GaN on Si

    SciTech Connect

    Armitage, Robert; Yang, Qing; Feick, Henning; Gebauer, Joerg; Weber, Eicke R.; Shinkai, Satoko; Sasaki, Katsutaka

    2002-05-08

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using sputter-deposited hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 (mu)m. Initial results for GaN grown on the (111) surface show a photoluminescence peak width of 17 meV at 11 K, and an asymmetric x-ray rocking curve width of 20 arcmin. Wurtzite GaN on HfN/Si(001) shows reduced structural quality and peculiar low-temperature luminescence features. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  18. Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire

    NASA Astrophysics Data System (ADS)

    Miyake, Hideto; Nishio, Gou; Suzuki, Shuhei; Hiramatsu, Kazumasa; Fukuyama, Hiroyuki; Kaur, Jesbains; Kuwano, Noriyuki

    2016-02-01

    The annealing of an AlN buffer layer in a carbon-saturated N2-CO gas on a sapphire substrate was investigated. The crystal quality of the buffer layer was significantly improved by annealing at 1650-1700 °C. An AlN buffer layer with a thickness of 300 nm was grown by metalorganic vapor phase epitaxy (MOVPE), and was annealed at 1700 °C for 1 h. We fabricated a 2-µm-thick AlN layer on the annealed AlN buffer layer by MOVPE. The full widths at half maximum of the (0002)- and (10\\bar{1}2)-plane X-ray rocking curves were 16 and 154 arcsec, respectively, and the threading dislocation density was 4.7 × 108 cm-2.

  19. Development of Solution Buffer Layers for RABiTS Based YBCO Coated Conductors

    SciTech Connect

    Paranthaman, Mariappan Parans; Qiu, Xiaofeng; List III, Frederick Alyious; Zhang, Yifei; Li, Xiaoping; Sathyamurthy, Srivatsan; Thieme, C. L. H.; Rupich, M. W.

    2011-01-01

    Abstract The main objective of this research is to find a suitable alternate solution based seed layer for the standard RABiTS three-layer architecture of physical vapor deposited CeO cap/YSZ barrier/Y O seed on Ni-5%W metal tape. In the present work, we have identified CeO buffer layer as a potential replacement for Y O seeds. Using a metal-organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of CeO (pure and Zr, Cu and Gd-doped) directly on biaxially textured Ni-5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial CeO phase with slightly improved out-of-plane texture compared to the texture of the underlying Ni-W substrates can be achieved in pure, undoped CeO samples. We have also demonstrated the growth of YSZ barrier layers on pure CeO seeds using sputtering. Both sputtered CeO cap layers and MOD-YBCO films were grown epitaxially on these YSZ-buffered MOD-CeO /Ni-5W substrates. High critical currents per unit width, of 264 A/cm (critical current density, of 3.3 MA/cm ) at 77 K and 0.01 T was achieved for 0.8 m thick MOD-YBCO films grown on MOD-CeO seeds. These results indicate that CeO films can be grown directly on Ni-5W substrates and still support high performance YBCO coated conductors. This work holds promise for a route for producing low-cost buffer architecture for RABiTS based YBCO coated conductors.

  20. Development of Solution Buffer Layers for RABiTS Based YBCO Coated Conductors

    SciTech Connect

    Paranthaman, Mariappan Parans; Qiu, Xiaofeng; Kim, Kyunghoon; Shi, D.; Zhang, Yifei; Li, Xiaoping; Sathyamurthy, Srivatsan; Thieme, C. L. H.; Rupich, M. W.

    2010-01-01

    The main objective of this research is to find a suitable alternate solution based seed layer for the standard RABiTS three-layer architecture of physical vapor deposited CeO2 cap/YSZ barrier/Y2O3 seed on Ni-5%W metal tape. In the present work, we have identified CeO2 buffer layer as a potential replacement for Y2O3 seeds. Using a metal-organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of CeO2 (both pure and Zr, Cu and Gd-doped) directly on biaxially textured Ni-5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial CeO2 phase with slightly improved out-of-plane texture compared to the texture of underlying Ni-W substrates can be achieved in pure, undoped CeO2 samples. We have also demonstrated the growth of YSZ barrier layers on pure CeO2 seeds using sputtering. Both sputtered CeO2 cap layers and MOD-YBCO films were grown epitaxially on these YSZ-buffered MOD-CeO2/Ni-5W substrates. High critical currents per unit width, Ic of 264 A/cm (critical current density, Jc of 3.3 MA/cm2) at 77 K and 0.01 T was achieved for 0.8 m thick MOD-YBCO films grown on MOD-CeO2 seeds. These results indicate that CeO2 films can be grown directly on Ni-5W substrates and still support high performance YBCO coated conductors. This work holds promise for a route for producing low-cost buffer architecture for RABiTS based YBCO coated conductors.

  1. Development of buffer layers by chemical solution deposition for YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Akin, Yalcin

    Short length YBCO coated conductors have been fabricated by vacuum thin film deposition techniques. However, the fabrication process increases the cost, and makes them impractical to use for commercial applications even if they are fabricated in kilometer lengths. YBCO coated conductors could be available in the market with a cheaper price by developing non-vacuum deposition techniques. The objective of this research was to investigate development of buffer layers by chemical solution deposition technique for YBCO coated conductors. Buffer layer structures are mainly used to prevent metal ion diffusion, and to reduce the lattice mismatch between YBCO and the metallic substrate. The technical approach, which was adapted here, is the reel-to-reel sol-gel dip coating process to fabricate long length coatings by developing buffer layers' chemical solutions. Rolling assisted biaxially textured Ni substrates were used for deposition of buffer layers. Cold rolled Ni strips were heat-treated at certain conditions to form biaxially textured structure, which became templates for textured growth of buffer layers that is necessary to obtain high critical current in the coated conductors. CeO2 was chosen as a buffer layers because it has been recognized as one of the best cap layers. Growth of highly textured, crack free, pinhole free and smooth CeO2 buffer layers have been demonstrated by chemical solution deposition technique on biaxially textured substrates. A new buffer layer with pseudocubic lattice parameters matching YBCO, (Eu0.893Yb0.107)2O3, was developed for the first time by using a mixture of Eu2O 3 and Yb2O3 to eliminate lattice mismatch, which adversely affected the critical current of the coated conductors. Highly textured (Eu0.893Yb0.107)2O3 buffer layers were deposited on biaxially textured Ni substrates by chemical solution deposition technique. Finally, the growth of CeO2 and (Eu0.893Yb 0.107)2O3 buffer layers were investigated on oxide layers because both Ce

  2. Graphene Growth on Pre-patterned Copper Film with Nickel as a Buffer Layer

    NASA Astrophysics Data System (ADS)

    Li, Yang; Deng, Wu-Zhu; Wang, Dong-Zhao; Chen, Yang-Yang; Zhou, Wen-Li

    2015-11-01

    Selective graphene growth has been simultaneously achieved on oxidized silicon substrate with three kinds of pre-patterned rectangular metal films, i.e., Cu/Ni double layer, and Ni and Cu single layer film, by atmospheric chemical vapor deposition at 1020°C. The top graphene maintains the micron-scale patterning of the metal film underneath. It was found that single layer graphene growth is more favorable on the Cu/Ni double layer film than on either single layer. The morphology and structure study of the pre-patterned metal substrates before and after graphene growth indicated that Ni functions as a buffer layer to significantly weaken the lattice mismatch between the copper and silicon substrate, resulting in a smoother and larger grain-sized Cu surface. It is also suggested that Ni diffuses to the Cu surface and participates in the graphene growth during the chemical vapor deposition (CVD) process. Defect-free single layer graphene growth can be obtained when the ratio of Cu/Ni is appropriate with respect to their thickness and the feature size of rectangular patterning.

  3. Superconducting composite with multilayer patterns and multiple buffer layers

    DOEpatents

    Wu, Xin D.; Muenchausen, Ross E.

    1993-01-01

    An article of manufacture including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superco n FIELD OF THE INVENTION The present invention relates to the field of superconducting articles having two distinct regions of superconductive material with differing in-plane orientations whereby the conductivity across the boundary between the two regions can be tailored. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  4. Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

    PubMed Central

    2013-01-01

    Barium titanate (BaTiO3) thin films are prepared by conventional 2-methoxy ethanol-based chemical solution deposition. We report highly c-axis-oriented BaTiO3 thin films grown on silicon substrates, coated with a lanthanum oxynitrate buffer layer of 8.9 nm. The influence of the intermediate buffer layer on the crystallization of BaTiO3 film is investigated. The annealing temperature and buffer layer sintering conditions are optimized to obtain good crystal growth. X-ray diffraction measurements show the growth of highly oriented BaTiO3 thin films having a single perovskite phase with tetragonal geometry. The scanning electron microscopy and atomic force microscopy studies indicate the presence of smooth, crack-free, uniform layers, with densely packed crystal grains on the silicon surface. A BaTiO3 film of 150-nm thickness, deposited on a buffer layer of 7.2 nm, shows a dielectric constant of 270, remnant polarization (2Pr) of 5 μC/cm2, and coercive field (Ec) of 60 kV/cm. PMID:23391429

  5. Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom

    DOEpatents

    Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.

  6. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOEpatents

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2003-09-09

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  7. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOEpatents

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2005-10-18

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  8. High Jc YBCO coated conductors on non-magnetic metallic substrate using YSZ-based buffer layer architecture

    NASA Astrophysics Data System (ADS)

    Celentano, G.; Boffa, V.; Ciontea, L.; Fabbri, F.; Galluzzi, V.; Gambardella, U.; Mancini, A.; Petrisor, T.; Rogai, R.; Rufoloni, A.; Varesi, E.

    2002-08-01

    Biaxially aligned YBa 2Cu 3O 7- δ (YBCO) thick films were deposited by pulsed laser ablation technique on cube textured non-magnetic Ni 89V 11 (Ni-V) substrate, using CeO 2/YSZ/CeO 2/NiO buffer layer architecture. The first NiO seed layer was formed by epitaxial oxidation of the Ni-V substrate. Structural analyses show typical full width at half maximum values of φ- and ω-scans less than 10° and 8°, respectively. The highest value obtained for the critical current density at 77 K and zero magnetic field was 6×10 5 A cm -2, which is close to that obtained for YBCO films grown on CeO 2/NiO buffer layer architecture.

  9. Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer

    PubMed Central

    2013-01-01

    A phase change memory (PCM) cell with atomic layer deposition titanium dioxide bottom heating layer is investigated. The crystalline titanium dioxide heating layer promotes the temperature rise in the AlSb3Te layer which causes the reduction in the reset voltage compared to a conventional phase change memory cell. The improvement in thermal efficiency of the PCM cell mainly originates from the low thermal conductivity of the crystalline titanium dioxide material. Among the various thicknesses of the TiO2 buffer layer, 4 nm was the most appropriate thickness that maximized the improvement with negligible sacrifice of the other device performances, such as the reset/set resistance ratio, voltage window, and endurance. PMID:23414571

  10. Alloying of Co ultrathin films on Pt(111) with Ag buffer layers

    NASA Astrophysics Data System (ADS)

    Shern, C. S.; Su, C. W.; Wu, Y. E.; Fu, T. Y.

    2000-07-01

    The structure at the interfaces of Co/Ag/Pt(111) was studied by low-energy electron diffraction, ultraviolet photoelectron spectroscopy, Auger electron spectroscopy, and depth profiling. An atomic exchange occurs between Co and Ag before the formation of a Co-Pt alloy. Ag atoms start moving to the top at 425 K when the coverage of Co is one monolayer. The temperature of the complete exchange between Ag atoms and Co atoms is dependent on the thickness of the Ag buffer layer. The Co-Pt alloy develops after the atomic exchange is complete. The especially small surface free energy of Ag and large strain energy in this system are proposed as the driving force for the exchange.

  11. Microstructures of YBa2Cu3Oy Layers Deposited on Conductive Layer-Buffered Metal Tapes

    NASA Astrophysics Data System (ADS)

    Ichinose, Ataru; Hashimoto, Masayuki; Horii, Shigeru; Doi, Toshiya

    REBa2Cu3Oy (REBCO; RE: rare-earth elements)-coated conductors (CCs) have high potential for use in superconducting devices. In particular, REBCO CCs are useful for superconducting devices working at relatively high temperatures near 77 K. The important issues in their applications are high performance, reliability and low cost. To date, sufficient performance for some applications has almost been achieved by considerable efforts. The establishment of the reliability of superconducting devices is under way at present. The issue of low cost must be resolved to realize the application of superconducting devices in the near future. Therefore, we have attempted several ways to reduce the cost of REBCO CCs. The coated conductors using a Nb-doped SrTiO3 buffer layer and Ni-plated Cu and stainless steel laminate metal tapes have recently been developed to eliminate the use of electric stabilization layers of Cu and Ag, which are expected to reduce the material cost. Good superconducting properties are obtained at 77 K. The critical current density (JC) at 77 K under a magnetic self-field is determined to be more than 2x106 A/cm2. The microstructures of the CCs are analyzed by transmission electron microscopy to obtain a much higher quality. By microscopic structure analysis, an overgrowth of the buffer layer is observed at a grain boundary of the metal substrate, which is one of the reasons for the high JC.

  12. Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers

    NASA Astrophysics Data System (ADS)

    Shimura, Yosuke; Tsutsui, Norimasa; Nakatsuka, Osamu; Sakai, Akira; Zaima, Shigeaki

    2009-04-01

    We investigated the relationship between Sn precipitation and strain relaxation in Ge1-xSnx buffer layers grown by the compositionally step-graded (CSG) method on a virtual Ge substrate. We found that the strain in the upper Ge1-xSnx layers is reduced by Sn precipitation rather than the lateral propagation of misfit dislocations at the interfaces of upper Ge1-xSnx layers in the CSG method. The critical misfit strain was increased to 5.8 ×10-3 compared with that in our previous work by lowering the temperature of the postdeposition annealing, and a Sn content of 6.3% in the Ge1-xSnx buffer layer was achieved with a large degree of strain relaxation using only two stacked layers of the CSG structure. An in-plane tensile strain of 0.62% in a 30-nm-thick Ge layer fabricated on these Ge1-xSnx buffer layers was achieved.

  13. Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

    DOEpatents

    Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

    2002-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

  14. MgO buffer layers on rolled nickel or copper as superconductor substrates

    DOEpatents

    Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

    2001-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

  15. Lattice curvature generation in graded InxGa1-xAs/GaAs buffer layers

    NASA Astrophysics Data System (ADS)

    Natali, M.; Romanato, F.; Napolitani, E.; de Salvador, D.; Drigo, A. V.

    2000-10-01

    Position dependent lattice tilts in InGaAs/GaAs(001) compositionally graded buffer layers are investigated. The lateral dependence of the tilt defines a concave buffer layer curvature of up to 3 deg cm-1. The buffer layer curvature is associated with a distribution of the misfit dislocation Burgers vectors that varies nearly linearly across the sample. The origin of this peculiar distribution is discussed and is explained in terms of a Burgers-vector selection rule, which governs the cross slip of gliding threading dislocations and that has been experimentally observed by Capano in Phys. Rev. B 45, 11 768 (1992). A quantitative model of lattice curvature formation is presented that satisfactorily accounts for the main features of the observed buffer layer curvature.

  16. Critical CuI buffer layer surface density for organic molecular crystal orientation change

    SciTech Connect

    Ahn, Kwangseok; Kim, Jong Beom; Lee, Dong Ryeol; Kim, Hyo Jung; Lee, Hyun Hwi

    2015-01-21

    We have determined the critical surface density of the CuI buffer layer inserted to change the preferred orientation of copper phthalocyanine (CuPc) crystals grown on the buffer layer. X-ray reflectivity measurements were performed to obtain the density profiles of the buffer layers and out-of-plane and 2D grazing-incidence X-ray diffraction measurements were performed to determine the preferred orientations of the molecular crystals. Remarkably, it was found that the preferred orientation of the CuPc film is completely changed from edge-on (1 0 0) to face-on (1 1 −2) by a CuI buffer layer with a very low surface density, so low that a large proportion of the substrate surface is bare.

  17. Reliability of Intra-Retinal Layer Thickness Estimates

    PubMed Central

    Oberwahrenbrock, Timm; Weinhold, Maria; Mikolajczak, Janine; Zimmermann, Hanna; Paul, Friedemann; Beckers, Ingeborg; Brandt, Alexander U.

    2015-01-01

    Purpose Measurement of intra-retinal layer thickness using optical coherence tomography (OCT) has become increasingly prominent in multiple sclerosis (MS) research. Nevertheless, the approaches used for determining the mean layer thicknesses vary greatly. Insufficient data exist on the reliability of different thickness estimates, which is crucial for their application in clinical studies. This study addresses this lack by evaluating the repeatability of different thickness estimates. Methods Studies that used intra-retinal layer segmentation of macular OCT scans in patients with MS were retrieved from PubMed. To investigate the repeatability of previously applied layer estimation approaches, we generated datasets of repeating measurements of 15 healthy subjects and 13 multiple sclerosis patients using two OCT devices (Cirrus HD-OCT and Spectralis SD-OCT). We calculated each thickness estimate in each repeated session and analyzed repeatability using intra-class correlation coefficients and coefficients of repeatability. Results We identified 27 articles, eleven of them used the Spectralis SD-OCT, nine Cirrus HD-OCT, two studies used both devices and two studies applied RTVue-100. Topcon OCT-1000, Stratus OCT and a research device were used in one study each. In the studies that used the Spectralis, ten different thickness estimates were identified, while thickness estimates of the Cirrus OCT were based on two different scan settings. In the simulation dataset, thickness estimates averaging larger areas showed an excellent repeatability for all retinal layers except the outer plexiform layer (OPL). Conclusions Given the good reliability, the thickness estimate of the 6mm-diameter area around the fovea should be favored when OCT is used in clinical research. Assessment of the OPL was weak in general and needs further investigation before OPL thickness can be used as a reliable parameter. PMID:26349053

  18. Characterization of MFIS Structure with Dy-Doped ZrO2 Buffer Layer

    NASA Astrophysics Data System (ADS)

    Im, J. H.; Ah, G. Z.; Han, D. H.; Park, B. E.

    2011-12-01

    To evaluate the feasibility of DZO thin film as an insulating buffer layer for ferroelectric gate field effect transistors (Fe-FETs) with a metal-ferroelectric-insulator-semiconductor (MFIS) structure, we fabricated DZO/Si and BLT/DZO/Si structures by a sol-gel method. Equivalent oxide thickness (EOT) values of the DZO thin films were about 12.4nm, 11.9nm, 11.2nm and 11.1 nm for 650 °C, 700 °C 750 °C, and 800 °C,, respectively. Hysteresis was observed in all capacitance-voltage (C-V) curves of the DZO/Si structures, but hysteresis of the 750-°C-annealed film was negligible. The leakage current densities of the DZO thin films on Si showed the good characteristics regardless of the annealing temperature variations. The C-V characteristics of Au/300-nm-thick BLT/750-°C-annealed DZO/Si structure showed clockwise hysteresis loops, and the memory window width increased as the bias voltage increased. The maximum value of the memory window width was about 1.9 V at ±7 V.

  19. Growth of lanthanum manganate buffer layers for coated conductors via a metal-organic decomposition process

    NASA Astrophysics Data System (ADS)

    Venkataraman, Kartik

    LaMnO3 (LMO) was identified as a possible buffer material for YBa2Cu3O7-x conductors due to its diffusion barrier properties and close lattice match with YBa2Cu 3O7-x. Growth of LMO films via a metal-organic decomposition (MOD) process on Ni, Ni-5at.%W (Ni-5W), and single crystal SrTiO3 substrates was investigated. Phase-pure LMO was grown via MOD on Ni and SrTiO 3 substrates at temperatures and oxygen pressures within a thermodynamic "process window" wherein LMO, Ni, Ni-5W, and SrTiO3 are all stable components. LMO could not be grown on Ni-5W in the "process window" because tungsten diffused from the substrate into the overlying film, where it reacted to form La and Mn tungstates. The kinetics of tungstate formation and crystallization of phase-pure LMO from the La and Mn acetate precursors are competitive in the temperature range explored (850--1100°C). Temperatures <850°C might mitigate tungsten diffusion from the substrate to the film sufficiently to obviate tungstate formation, but LMO films deposited via MOD require temperatures ≥850°C for nucleation and grain growth. Using a Y2O3 seed layer on Ni-5W to block tungsten from diffusing into the LMO film was explored; however, Y2O3 reacts with tungsten in the "process window" at 850--1100°C. Tungsten diffusion into Y2O3 can be blocked if epitaxial, crack-free NiWO4 and NiO layers are formed at the interface between Ni-5W and Y2O3. NiWO 4 only grows epitaxially if the overlying NiO and buffer layers are thick enough to mechanically suppress (011)-oriented NiWO4 grain growth. This is not the case when a bare 75 nm-thick Y2O3 film on Ni-5W is processed at 850°C. These studies show that the Ni-5W substrate must be at a low temperature to prevent tungsten diffusion, whereas the LMO precursor film must be at elevated temperature to crystallize. An excimer laser-assisted MOD process was used where a Y2O 3-coated Ni-5W substrate was held at 500°C in air and the pulsed laser photo-thermally heated the Y2O3 and LMO

  20. The effect of the carbon nanotube buffer layer on the performance of a Li metal battery

    NASA Astrophysics Data System (ADS)

    Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

    2016-05-01

    Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery.Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a

  1. Nanometer-Scale Epitaxial Strain Release in Perovskite Heterostructures Using 'SrAlOx' Sliding Buffer Layers

    SciTech Connect

    Bell, Christopher

    2011-08-11

    We demonstrate the strain release of LaAlO{sub 3} epitaxial film on SrTiO{sub 3} (001) by inserting ultra-thin 'SrAlO{sub x}' buffer layers. Although SrAlO{sub x} is not a perovskite, nor stable as a single phase in bulk, epitaxy stabilizes the perovskite structure up to a thickness of 2 unit cells (uc). At a critical thickness of 3 uc of SrAlO{sub x}, the interlayer acts as a sliding buffer layer, and abruptly relieves the lattice mismatch between the LaAlO{sub 3} filmand the SrTiO{sub 3} substrate, while maintaining crystallinity. This technique may provide a general approach for strain relaxation of perovskite film far below the thermodynamic critical thickness. A central issue in heteroepitaxial filmgrowth is the inevitable difference in lattice constants between the filmand substrate. Due to this lattice mismatch, thin film are subjected to microstructural strain, which can have a significan effect on the filmproperties. This challenge is especially prominent in the rapidly developing fiel of oxide electronics, where much interest is focused on incorporating the emergent physical properties of oxides in devices. Although strain can be used to great effect to engineer unusual ground states, it is often deleterious for bulk first-orde phase transitions, which are suppressed by the strain and symmetry constraints of the substrate. While there are some reports discussing the control of the lattice mismatch in oxides using thick buffer layers, the materials choice, lattice-tunable range, and control of misfit dislocations are still limited. In this Letter, we report the fabrication of strain-relaxed LaAlO{sub 3} (LAO) thin film on SrTiO{sub 3} (STO) (001) using very thin 'SrAlO{sub x}' (SAO) buffer layers. Whereas for 1 or 2 pseudo-perovskite unit cells (uc) of SAO, the subsequent LAO filmis strained to the substrate, at a critical thickness of 3 uc the SAO interlayer abruptly relieves the lattice mismatch between the LAO and the STO, although maintaining the

  2. Crystallization of amorphous silicon thin films using nanoenergetic intermolecular materials with buffer layers

    NASA Astrophysics Data System (ADS)

    Lee, Choong Hee; Jeong, Tae Hoon; Kim, Do Kyung; Jeong, Woong Hee; Kang, Myung-Koo; Hwang, Tae Hyung; Kim, Hyun Jae

    2009-02-01

    Optimization of the crystallization of amorphous silicon (a-Si) using a mixture of nanoenergetic materials of iron oxide/aluminum (Fe 2O 3/Al) was studied. To achieve high-quality polycrystalline Si (poly-Si) thin films, silicon oxide (SiO 2) and silver (Ag) layer were deposited on the a-Si as buffer layers to prevent the metal diffusion in a-Si during thermite reaction and to transport the thermal energy released from nanoenergetic materials, respectively. Raman measurement was used to define the crystallinity of poly-Si. For molar ratio of Al and Fe of 2 with 100-nm-thick-SiO 2, Raman measurement showed the 519.59 cm -1 of peak position and the 5.08 cm -1 of full width at half maximum with 353 MPa of low tensile stress indicating high quality poly-Si thin film. These results showed that optimized thermite reaction could be used successfully in crystallization of a-Si to high -quality poly-Si thin films.

  3. Photovoltaic devices comprising zinc stannate buffer layer and method for making

    DOEpatents

    Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

    2001-01-01

    A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

  4. Thick growing multilayer nanobrick wall thin films: super gas barrier with very few layers.

    PubMed

    Guin, Tyler; Krecker, Michelle; Hagen, David Austin; Grunlan, Jaime C

    2014-06-24

    Recent work with multilayer nanocoatings composed of polyelectrolytes and clay has demonstrated the ability to prepare super gas barrier layers from water that rival inorganic CVD-based films (e.g., SiOx). In an effort to reduce the number of layers required to achieve a very low oxygen transmission rate (OTR (<0.01 cc/m(2)·day·atm)) in these nanocoatings, buffered cationic chitosan (CH) and vermiculite clay (VMT) were deposited using layer-by-layer (LbL) assembly. Buffering the chitosan solution and its rinse with 50 mM Trizma base increased the thickness of these films by an order of magnitude. The OTR of a 1.6-μm-thick, six-bilayer film was 0.009 cc/m(2)·day·atm, making this the best gas barrier reported for such a small number of layers. This simple modification to the LbL process could likely be applied more universally to produce films with the desired properties much more quickly. PMID:24914613

  5. Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

    NASA Astrophysics Data System (ADS)

    Sun, Rui; Makise, Kazumasa; Zhang, Lu; Terai, Hirotaka; Wang, Zhen

    2016-06-01

    We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large IcRN product of 3.8 mV, a sharp quasiparticle current rise with a ΔVg of 0.4 mV, and a small subgap leakage current. The junction quality factor Rsg/RN was about 23 for the junction with a Jc of 47 A/cm2 and was about 6 for the junction with a Jc of 3.0 kA/cm2. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.

  6. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect

    Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 ; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.; Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7; Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  7. Buffer layer annealing effects on the magnetization reversal process in Pd/Co/Pd systems

    NASA Astrophysics Data System (ADS)

    Fassatoui, A.; Belhi, R.; Vogel, J.; Abdelmoula, K.

    2016-12-01

    We have investigated the effect of annealing the buffer layer on the magnetization reversal behavior in Pd/Co/Pd thin films using magneto-optical Kerr microscopy. It was found that annealing the buffer layer at 150 °C for 1 h decreases the coercivity and increases the saturation magnetization and the effective magnetic anisotropy constant. This study also shows that the annealing induces a change of the magnetization reversal from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation. This result demonstrates that the main effect of annealing the buffer layer is to decrease the domain wall pinning in the Co layer, favoring the domain wall propagation mode.

  8. The effect of the carbon nanotube buffer layer on the performance of a Li metal battery.

    PubMed

    Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

    2016-06-01

    Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery. PMID:27181758

  9. Improving performance of inverted organic solar cells using ZTO nanoparticles as cathode buffer layer

    NASA Astrophysics Data System (ADS)

    Tsai, Meng-Yen; Cheng, Wen-Hui; Jeng, Jiann-Shing; Chen, Jen-Sue

    2016-06-01

    In this study, a low-temperature solution-processed zinc tin oxide (ZTO) films are successfully utilized as the cathode buffer layer in the inverted organic P3HT:PCBM bulk heterojunction solar cells. ZTO film cathode buffer layer with an appropriate Sn-doping concentration outperforms the zinc oxide (ZnO) film with an improved power conversion efficiency (1.96% (ZTO film) vs. 1.56% (ZnO film)). Furthermore, ZTO nanoparticles (NPs) are also synthesized via low-temperature solution route and the device with ZTO NPs buffer layer exhibits a significant improvement in device performance to reach a PCE of 2.60%. The crystallinity of the cathode buffer layer plays an influential factor in the performance. From impedance spectroscopy analysis, a correlation between short circuit current (Jsc), carrier life time (τavg) and, thus, PCE is observed. The interplay between composition and crystallinity of the cathode buffer layers is discussed to find their influences on the solar cell performance.

  10. Transport Studies on Nanometer Thick YBa2Cu3O7-δ Multilayers Using Y0.4Pr0.6Cu3O7 and PrBa2(Cu0.8Ga0.2)3O7 as Buffer Layers

    NASA Astrophysics Data System (ADS)

    Wu, Ke; Tipparach, Udom.; Chen, Tar-Pin; Li, Qi; Zeng, X. H.; Wert, E.; Wagner, John. L.; Chen, Quark Y.; Wang, J. T.; Yang, Hong-Chang; Horng, Herng-Er

    We have fabricated PrBa2[Cu1-xGax]3O7 (PBGCO) ceramic samples for x = 0.05, 0.10, 0.15 and 0.20. The electrical resistivities of these samples are many orders of magnitude higher than that of PrBa2Cu3O7 (Pr123) while the other physical properties remain much the same. PBGCO therefore may be a possible buffer layer for YBa2Cu3O7-δ (Y123) superlattices/multilayers. For this reason YBa2Cu3O7-δ/PrBa2(Cu0.8Ga0.2)3O7 (Y123/PBCGO) and YBa2Cu3O7-δ/Y0.4Pr0.6Ba2Cu3O7 (Y123/YPBCO) superlattices were fabricated and their transport properties were studied. It is found that although PBGCO is better for insulating Y123 films in trilayers, inter-Y123 layer coupling exists between separated Y123 layer.

  11. Synthesis of Vertically Aligned ZnO Nanorods on Ni-Based Buffer Layers Using a Thermal Evaporation Process

    NASA Astrophysics Data System (ADS)

    Kuo, Dong-Hau; He, Jheng-Yu; Huang, Ying-Sheng

    2012-03-01

    Uniform, vertically aligned ZnO nanorods have been grown mainly on Au-coated and ZnO-coated sapphire substrates, ZnO- and GaN-coated substrates, or self-catalyzing substrates. Conventionally, Ni-coated substrates have resulted in thick rods with diameter more than 250 nm, rods with nonuniform distribution in diameter, or rods with an alignment problem. In the best result in this paper, slender, uniform, vertically aligned, solely UV-emitting ZnO nanorods with diameter of 110 ± 25 nm and length of 30 ± 10 μm have been successfully grown at 700°C for 2 h on sapphire substrates covered with Ni-based buffer layers by using metallic zinc and oxygen as reactants. Scanning electron microscopy and room-temperature photoluminescence have been used to investigate the effects of process conditions on the slenderness and vertical alignment of the ZnO rods. To develop the desired ZnO nanorods, etched sapphire substrates, a second metallic Sn buffer layer on top of a spin-coated nickel oxide layer, polyvinyl alcohol binder at 10% concentration in solution of iron nitrate, and pyrolysis and reduction reactions were involved. Defect photoemission for thick ZnO rods is attributed to insufficient oxygen supply during the growth process with fixed oxygen flow rate.

  12. [Study on the Effects of Alq₃:CsF Composite Cathode Buffer Layer on the Performances of CuPc/C₆₀ Solar Cells].

    PubMed

    Zhao, Huan-bin; Sun, Qin-jun; Zhou, Miao; Gao, Li-yan; Hao, Yu-ying; Shi, Fang

    2016-02-01

    This paper introduces the methods improving the performance and stability of copper-phthalocyanine(CuPc) / fullerene (C₆₀) small molecule solar cells by using tris-(8-hydroxyquinoline) aluminum(Alq₃): cesium fluoride(CsF) composite cathode buffer layer. The device with Alq₃:CsF composite cathode buffer layer with a 4 wt. % CsF at a thickness of 5 nm exhibits a power conversion efficiency (PCE) of up to 0.76%, which is an improvement of 49%, compared to a device with single Alq₃ cathode buffer layer and half-lifetime of the cell in air at ambient circumstance without any encapsulation is almost 9.8 hours, 6 times higher than that of without buffer layer, so the stability is maintained. The main reason of the device performance improvement is that doping of CsF can adjust the interface energy alignment, optimize the electronic transmission characteristics of Alq₃ and improve the short circuit current and the fill factor of the device using ultraviolet-visible absorption, external quantum efficiency and single-electron devices. Placed composite cathode buffer layer devices with different time in the air, by comparing and analyzing current voltage curve, Alq₃:CsF can maintain a good stability as Alq₃. Alq₃:CsF layer can block the diffusion of oxygen and moisture so completely as to improve the lifetime of the device. PMID:27209725

  13. Evaluation of methods for application of epitaxial layers of superconductor and buffer layers

    SciTech Connect

    1997-06-01

    The recent achievements in a number of laboratories of critical currents in excess of 1.0x10{sup 6} amp/cm{sup 2} at 77K in YBCO deposited over suitably textured buffer/substrate composites have stimulated interest in the potential applications of coated conductors at high temperatures and high magnetic fields. As of today, two different approaches for obtaining the textured substrates have been identified. These are: Los Alamos National Laboratory`s (LANL) ion-beam assisted deposition called IBAD, to obtain a highly textured yttria-stabilized zirconia (YSZ) buffer on nickel alloy strips, and Oak Ridge National Laboratory`s (ORNL) rolling assisted, bi-axial texturized substrate option called RABiTS. Similarly, based on the published literature, the available options to form High Temperature Superconductor (HTS) films on metallic, semi-metallic or ceramic substrates can be divided into: physical methods, and non-physical or chemical methods. Under these two major groups, the schemes being proposed consist of: - Sputtering - Electron-Beam Evaporation - Flash Evaporation - Molecular Beam Epitaxy - Laser Ablation - Electrophoresis - Chemical Vapor Deposition (Including Metal-Organic Chemical Vapor Deposition) - Sol-Gel - Metal-Organic Decomposition - Electrodeposition, and - Aerosol/Spray Pyrolysis. In general, a spool- to-spool or reel-to-reel type of continuous manufacturing scheme developed out of any of the above techniques, would consist of: - Preparation of Substrate Material - Preparation and Application of the Buffer Layer(s) - Preparation and Application of the HTS Material and Required Post-Annealing, and - Preparation and Application of the External Protective Layer. These operations would be affected by various process parameters which can be classified into: Chemistry and Material Related Parameters; and Engineering and Environmental Based Parameters. Thus, one can see that for successful development of the coated conductors manufacturing process, an

  14. Silver hollow optical fibers with acrylic silicone resin coating as buffer layer for sturdy structure

    NASA Astrophysics Data System (ADS)

    Iwai, Katsumasa; Takaku, Hiroyuki; Miyagi, Mitsunobu; Shi, Yi-Wei; Zhu, Xiao-Song; Matsuura, Yuji

    2016-03-01

    For sturdy silver hollow optical fibers, acrylic silicone resin is newly used as a buffer layer between an inner silver layer and a silica capillary. This acrylic silicone resin film prevents the glass surface from chemical and mechanical micro damages during silver plating process, which deteriorate mechanical strength of the hollow fibers. In addition, it keeps high adhesion of the silver layer with the glass surface. We discuss improvement of mechanical strength of the hollow glass fibers without deterioration of optical properties.

  15. Effect of buffer layer and external stress on magnetic properties of flexible FeGa films

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoshan; Zhan, Qingfeng; Dai, Guohong; Liu, Yiwei; Zuo, Zhenghu; Yang, Huali; Chen, Bin; Li, Run-Wei

    2013-05-01

    We systematically investigated the effect of a Ta buffer layer and external stress on the magnetic properties of magnetostrictive Fe81Ga19 films deposited on flexible polyethylene terephthalate (PET) substrates. The Ta buffer layers could effectively smoothen the rough surface of PET. As a result, the FeGa films grown on Ta buffer layers exhibit a weaker uniaxial magnetic anisotropy and lower coercivity, as compared to those films directly grown on PET substrates. By inward and outward bending the FeGa/Ta/PET samples, external in-plane compressive and tensile stresses were applied to the magnetic films. Due to the inverse magnetostrictive effect of FeGa, both the coercivity and squareness of hysteresis loops for FeGa/Ta films could be well tuned under various strains.

  16. Microstructure of GaN epitaxy on SiC using AlN buffer layers

    SciTech Connect

    Ponce, F.A.; Krusor, B.S.; Major, J.S. Jr.; Plano, W.E.; Welch, D.F.

    1995-07-17

    The crystalline structure of GaN epilayers on (0001) SiC substrates has been studied using x-ray diffraction and transmission microscopy. The films were grown by metalorganic chemical vapor deposition, using AlN buffer layers. X-ray diffraction measurements show negligible strain in the epilayer, and a long-range variation in orientation. Transmission electron lattice images show that the AlN buffer layer consists of small crystallites. The nature of the buffer layer and its interfaces with the substrate and the GaN film is discussed. The defect structure of the GaN film away from the substrate consists mostly of threading dislocations with a density of {similar_to}10{sup 9} cm{sup {minus}2}. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  17. Buffer layer between a planar optical concentrator and a solar cell

    NASA Astrophysics Data System (ADS)

    Solano, Manuel E.; Barber, Greg D.; Lakhtakia, Akhlesh; Faryad, Muhammad; Monk, Peter B.; Mallouk, Thomas E.

    2015-09-01

    The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structure increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.

  18. Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

    NASA Technical Reports Server (NTRS)

    Srinivas, S.; Pinto, R.; Pai, S. P.; Dsousa, D. P.; Apte, P. R.; Kumar, D.; Purandare, S. C.; Bhatnagar, A. K.

    1995-01-01

    Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si (100), Sapphire and LaAlO3 (100) substrates. The effect of substrate temperatures up to 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa2Cu3O7-x (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

  19. Buffer layer between a planar optical concentrator and a solar cell

    SciTech Connect

    Solano, Manuel E.; Barber, Greg D.; Lakhtakia, Akhlesh; Faryad, Muhammad; Monk, Peter B.; Mallouk, Thomas E.

    2015-09-15

    The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structure increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.

  20. Coercivity enhancement of Nd-Fe-B thin film magnets by Dy buffer and capping layers

    NASA Astrophysics Data System (ADS)

    You, C. Y.; Wang, J. W.; Lu, Z. X.

    2012-04-01

    The Dy layer was inserted into the structure of SiO2/Ti/Nd-Fe-B/Ti as the buffer or capping layer of the Nd-Fe-B layer. The insertions of Dy layers had no significant influence on the film texture with the easy axis mainly perpendicular to the film plane. The film without Dy layer gave the out-of-plane coercivity of 533 kA/m, maximum magnetic energy product (BH)max of 245 kJ/m3. With a Dy buffer layer, the out-of-plane coercivity and (BH)max were increased to 1074 kA/m, 291 kJ/m3 respectively. The film with Dy capping layer had a coercivity of 1035 kA/m and (BH)max of 286 kJ/m3. Microstructure observations showed that the Nd-rich phases were evolved into grain boundaries from triple junctions by a Dy buffer layer deposition, resulting in a well magnetic decoupling of Nd2Fe14B neighboring grains. Through capping a Dy layer, the environment of grain boundaries had been improved and some Dy diffused into Nd2Fe14B phases, which contributed to the enhancement of magnetic performance.

  1. Surface Plasmon Resonance Enhanced Polymer Solar Cells by Thermally Evaporating Au into Buffer Layer.

    PubMed

    Yao, Mengnan; Jia, Xu; Liu, Yan; Guo, Wenbin; Shen, Liang; Ruan, Shengping

    2015-08-26

    Generally, the surface plasmon resonance (SPR) effect of metal nanoparticles is widely applied on polymer solar cells (PSCs) to improve device performance by doping method into solution. Herein, a diameter-controlled thermally evaporation method was used to realize Au nanoparticles (Au NPs) doping into WO3 anode buffer layer in inverted PSCs. The surface energy differences between Au and WO3 inevitably lead to Au growing up through the process from nucleation, isolated island, aggregation of metal islands to continuous films along with the process of evaporation. The atom force microscopy (AFM) images indicate that critical thickness of Au film formation is 8 nm, which is in accordance with current density-voltage (J-V) and incident photon-to-electron conversion efficiency (IPCE) measurement results of optimal device performance. The power conversion efficiency (PCE) with 8 nm Au is dramatically improved from 4.67 ± 0.13% to 6.63 ± 0.17% compared to the one without Au. Moreover, the optical absorption enhancement is demonstrated by steady state photoluminescence (PL), which agrees well with transmission spectrum. The optical and electrical improvement all suggest that thermal evaporation is the appropriate method to further enhance device performance. PMID:26230868

  2. Automated segmentation of intraretinal layers from spectral-domain macular OCT: reproducibility of layer thickness measurements

    NASA Astrophysics Data System (ADS)

    Lee, Kyungmoo; Abràmoff, Michael D.; Sonka, Milan; Garvin, Mona K.

    2011-03-01

    Changes in intraretinal layer thickness occur in a variety of diseases such as glaucoma, macular edema and diabetes. To segment the intraretinal layers from macular spectral-domain OCT (SD-OCT) scans, we previously introduced an automated multiscale 3-D graph search method and validated its performance by computing unsigned border positioning differences when compared with human expert tracings. However, it is also important to study the reproducibility of resulting layer thickness measurements, as layer thickness is a commonly used clinical parameter. In this work, twenty eight (14 x 2) repeated macular OCT volumes were acquired from the right eyes of 14 normal subjects using two Zeiss-Cirrus SD-OCT scanners. After segmentation of 10 intraretinal layers and rigid registration of layer thickness maps from the repeated OCT scans, the thickness difference of each layer was calculated. The overall mean global and regional thickness differences of 10 intraretinal layers were 0.46 +/- 0.25 μm (1.70 +/- 0.72 %) and 1.16 +/- 0.84 μm (4.03 +/- 2.05 %), respectively. No specific local region showed a consistent thickness difference across the layers.

  3. Determination of graphene layer thickness using optical image processing

    NASA Astrophysics Data System (ADS)

    Cook, Monica; Mani, R. G.

    2015-03-01

    Graphene, a single atomic layer of carbon arranged in a hexagonal lattice structure, is a valuable material in a wide range of research. A significant impediment to graphene research is the need to manually characterize the thickness of high-quality graphene produced via mechanical exfoliation. Traditional methods of characterizing the layer thickness of graphene, including Raman spectroscopy and atomic force microscopy, require expensive equipment and can be damaging to the graphene sample. We examine here a known alternative method for quantitatively determining the layer thickness of graphene on SiO2/Si based on optical image processing, which is quick, inexpensive, and non-invasive. Using RGB images of a candidate graphene sample and a background image, taken with a simple optical microscope and charge-coupled device (CCD) camera, we process the images with an algorithm based on Fresnel's law to obtain the contrast spectrum. Each layer of graphene exhibits a unique contrast spectrum for its particular substrate, which is measured and used for accurate layer identification. We also discuss how this algorithm can be generalized to characterize the thickness of other promising two-dimensional materials as well as more complex structures on a variety of substrates.

  4. Exciton-blocking phosphonic acid-treated anode buffer layers for organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Zimmerman, Jeramy D.; Song, Byeongseop; Griffith, Olga; Forrest, Stephen R.

    2013-12-01

    We demonstrate significant improvements in power conversion efficiency of bilayer organic photovoltaics by replacing the exciton-quenching MoO3 anode buffer layer with an exciton-blocking benzylphosphonic acid (BPA)-treated MoO3 or NiO layer. We show that the phosphonic acid treatment creates buffers that block up to 70% of excitons without sacrificing the hole extraction efficiency. Compared to untreated MoO3 anode buffers, BPA-treated NiO buffers exhibit a ˜ 25% increase in the near-infrared spectral response in diphenylanilo functionalized squaraine (DPSQ)/C60-based bilayer devices, increasing the power conversion efficiency under 1 sun AM1.5G simulated solar illumination from 4.8 ± 0.2% to 5.4 ± 0.3%. The efficiency can be further increased to 5.9 ± 0.3% by incorporating a highly conductive exciton blocking bathophenanthroline (BPhen):C60 cathode buffer. We find similar increases in efficiency in two other small-molecule photovoltaic systems, indicating the generality of the phosphonic acid-treated buffer approach to enhance exciton blocking.

  5. The role of buffer layers and double windows layers in a solar cell CZTS performances

    NASA Astrophysics Data System (ADS)

    Mebarkia, C.; Dib, D.; Zerfaoui, H.; Belghit, R.

    2016-07-01

    In the overall context of the diversification of the use of natural resources, the use of renewable energy including solar photovoltaic has become increasingly indispensable. As such, the development of a new generation of photovoltaic cells based on CuZnSnS4 (CZTS) looks promising. Cu2ZnSnS4 (CZTS) is a new film absorber, with good physical properties (band gap energy 1.4-1.6 eV with a large absorption coefficient over 104 cm-1). Indeed, the performance of these cells exceeded 30% in recent years. In the present paper, our work based on modeling and numerical simulation, we used SCAPS to study the performance of solar cells based on Cu2ZnSnS4 (CZTS) and thus evaluate the electrical efficiency η for typical structures of n-ZnO:Al / i-ZnO / n-CdS / p-CZTS and n-ITO / n-ZnO:Al / n-CdS /p-CZTS. Furthermore, the influence of the change of CdS by ZnSeand In2S3buffer layer was treated in this paper.

  6. A Proposal of Evaluation of Frost Layer Thickness

    NASA Astrophysics Data System (ADS)

    Yotsumoto, Hiroyuki; Ishihara, Isao; Tanio, Kenichi; Matsumoto, Ryosuke

    The frosting is an unsteady phenomenon occurs simultaneously with heat and mass transfer. Both the heat and water vapor in the humid air reach the surface of the frost layer and transfer to the cold surface. The frost surface plays an important role as an interface of heat and mass transfer between air-flow and ice-air composite solid layer. However, since the frost layer surface consists of ice and air, and is rough and unsteady, any specific definition of the frost layer thickness is not found. This paper tried to give the definition. The frost layer thickness was measured by using a micro photo-sensing device combined with a light emitter and receiver traversing normal to the frost surface. During traversing the device, a peak response from the device indicates the vertical position corresponding to the maximum frost area exposed to the emitted light i.e. air around the frost inside the frost layer. This position is defined as the frost layer position and it could give an effective frost layer.

  7. Anisotropic layers with through-thickness thermal and material variations

    SciTech Connect

    Ferrari, M. )

    1992-09-01

    The thermoelastic problem of an inhomogeneous anisotropic layer with material properties that vary smoothly through the thickness is examined. The problem is solved via a semiinverse technique, relying on the assumptions of the simply-connectedness of the body. The solution is applicable to the analysis of materials with chemical composition gradients and/or temperature-dependent material properties. 14 refs.

  8. Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

    SciTech Connect

    Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

    2015-05-26

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

  9. Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.

    PubMed

    Wu, Yun; Zou, Jianjun; Huo, Shuai; Lu, Haiyan; Kong, Yuecan; Chen, Tangshen; Wu, Wei; Xu, Jingxia

    2015-08-01

    Owing to the scattering and trapping effects, the interfaces of dielectric/graphene or substrate/graphene can tailor the performance of field-effect transistor (FET). In this letter, the polymer of benzocyclobutene (BCB) was used as an amphibious buffer layer and located at between the layers of substrate and graphene and between the layers of dielectric and graphene. Interestingly, with the help of nonpolar and hydrophobic BCB buffer layer, the large-scale top-gated, chemical vapor deposited (CVD) graphene transistors was prepared on Si/SiO2 substrate, its cutoff frequency (fT) and the maximum cutoff frequency (fmax) of the graphene field-effect transistor (GFET) can be reached at 12 GHz and 11 GHz, respectively. PMID:26369142

  10. 'Buffer-layer' technique for the growth of single crystal SiC on Si

    NASA Astrophysics Data System (ADS)

    Addamiano, A.; Sprague, J. A.

    1984-03-01

    The nature of the buffer layers needed for the single-crystal deposition of cubic SiC on Si substrates has been studied. The preparation of chemically formed surface layers of SiC on (100) Si wafers is described. The reaction-grown films of SiC were examined by reflection high-energy electron diffraction using an incident electron energy of 200 keV and by SEM using incident electron energies of 20 and 200 keV. It is concluded that the buffer layer obtained at about 1400 C is a stressed monocrystalline layer of cubic SiC whose crystals contain considerable imperfections. The stresses are due to quenching to room temperature because of the large difference between the thermal expansion coefficients of Si and SiC.

  11. Grafted polymers inside cylindrical tubes: Chain stretching vs layer thickness

    NASA Astrophysics Data System (ADS)

    Suo, Tongchuan; Whitmore, Mark D.

    2013-04-01

    We present a study of the detailed structure of grafted polymer chains and the layers they form inside cylindrical tubes, using the finitely extensible nonlinear elastic chain model and numerical self-consistent field theory. For very large tube radius, the chain stretching and layer thicknesses are the same as for polymers grafted to a planar surface. For decreasing radius, our calculations indicate that the layer almost always gets thinner, although there can be situations where it is very slightly thicker. However, we find that this thinning is not necessarily due to changes to the polymers: in fact, the root-mean-squared layer thickness would decrease even if the polymers themselves are completely unchanged. Furthermore, we find that the polymer stretching can increase at the same time that the layer thickness decreases. These apparent paradoxes are resolved by analyzing and distinguishing between the volume fraction profiles and monomer number distributions in these systems, including how they change and why. We also find that, in a given system, parts of each polymer move towards the curved surface and parts away from it, and that these differences are key to understanding the behavior.

  12. Interface characterization of nanometer scale CdS buffer layer in chalcopyrite solar cell

    NASA Astrophysics Data System (ADS)

    Lin, Shih-Hung; Cheng, Tzu-Huan

    2016-06-01

    The buffer layer of a chalcopyrite solar cell plays an important role in optical responses of open circuit voltage (V oc) and short circuit current (J sc). A CdS buffer layer is applicable on the nanometer scale owing to its high carrier concentration and n-type semiconductor behavior in chalcopyrite solar cells. The thin buffer layer also contributes to the passivation of the absorber surface to reduce defect recombination loss. Non-destructive metrological parameters such as photoluminescence (PL) intensity, external quantum efficiency (EQE), and depth-resolved photovoltage are used to characterize the interface quality of CdS/chalcopyrite. The defects and dangling bonds at the absorber surface will cause interface recombination and reduce the cell performance in build-in voltage distribution. Post annealing can improve Cd ion diffusion from the buffer layer to the absorber surface and reduce the density of defects and dangling bonds. After thermal annealing, the EQE, PL intensity, and minority carrier lifetime are improved.

  13. Effect of buffer layer on thermochromic performances of VO2 films fabricated by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhu, Benqin; Tao, Haizheng; Zhao, Xiujian

    2016-03-01

    As a well-developed industrial fabricating method, magnetron sputtering technique has its distinct advantages for the large-scale production. In order to investigate the effect of buffer layer on the formation and thermochromic performances of VO2 films, using RF magnetron sputtering method, we fabricated three kinds of buffer layers SiO2, TiO2 and SnO2 on soda lime float-glass. Then according to the reactive DC magnetron sputtering method, VO2 films were deposited. Due to the restriction of heat treatment temperature when using soda lime float-glass as substrates, dense rutile phase TiO2 cannot be formed, leading to the formation of vanadium oxide compounds containing Na ions. When using SnO2 as buffer layer, we found that relatively high pure VO2 can be deposited more easily. In addition, compared with the effect of SiO2 buffer layer, we observed an enhanced visible transparency, a decreased infrared emissivity, which should be mainly originated from the modified morphology and/or the hetero-structured VO2/SnO2 interface.

  14. Sol-gel deposition of buffer layers on biaxially textured metal substances

    DOEpatents

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  15. Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

    SciTech Connect

    Srinivas, S.; Bhatnagar, A.K.; Pinto, R.

    1994-12-31

    Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si<100>, Sapphire and LaAlO{sub 3} <100> substrates. The effect of substrate temperatures upto 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar structure with variation growth conditions. The buffer layers of YSZ and STO showed orientation. The tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa{sub 2}Cu{sub 9}O{sub 7-x} (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

  16. Retinal nerve fiber layer and ganglion cell-inner plexiform layer thickness in children with obesity

    PubMed Central

    Demir, Selim; Özer, Samet; Alim, Sait; Güneş, Alper; Ortak, Hüseyin; Yılmaz, Resul

    2016-01-01

    AIM To evaluate retinal nerve fiber layer (RNFL) thickness analysis of peripapillary optic nerve head (PONH) and macula as well as ganglion cell-inner plexiform layer (GCIPL) thickness in obese children. METHODS Eighty-five children with obesity and 30 controls were included in the study. The thicknesses of the PONH and macula of each subject's right eye were measured by high-resolution spectral-domain optic coherence tomography (OCT). RESULTS The RNFL thicknesses of central macular and PONH were similar between the groups (all P>0.05). The GCIPL thickness was also similar between the groups. However, the RNFL thickness of temporal outer macula were 261.7±13.7 and 268.9±14.3 µm for the obesity and the control group, respectively (P=0.034). CONCLUSION Obesity may cause a reduction in temporal outer macular RNFL thickness. PMID:27158616

  17. High-Quality AgGaTe2 Layers on Si Substrates with Ag2Te Buffer Layers

    NASA Astrophysics Data System (ADS)

    Uruno, Aya; Kobayashi, Masakazu

    2016-05-01

    AgGaTe2 layers were successfully grown on Si substrates by the close-spaced sublimation method. The Si substrates were confirmed to be etched during AgGaTe2 layer growth when the layer was grown directly on the substrate. To eliminate melt-back etching, a buffer layer of Ag2Te was introduced. It was found that the Ag2Te buffer layer changed into the AgGaTe2 layer during the growth process, and a uniform AgGaTe2 layer with an abrupt interface was formed. Both the diffusion of Ga into Ag2Te and the growth of AgGaTe2 occurred simultaneously. It was confirmed that uniform AgGaTe2 layers could be formed without any traces of the Ag2Te layer or melt-back etching by tuning the growth parameters. A solar cell was also fabricated using the p-AgGaTe2/n-Si heterojunction. This solar cell showed conversion efficiency of approximately 3%.

  18. High-Quality AgGaTe2 Layers on Si Substrates with Ag2Te Buffer Layers

    NASA Astrophysics Data System (ADS)

    Uruno, Aya; Kobayashi, Masakazu

    2016-09-01

    AgGaTe2 layers were successfully grown on Si substrates by the close-spaced sublimation method. The Si substrates were confirmed to be etched during AgGaTe2 layer growth when the layer was grown directly on the substrate. To eliminate melt-back etching, a buffer layer of Ag2Te was introduced. It was found that the Ag2Te buffer layer changed into the AgGaTe2 layer during the growth process, and a uniform AgGaTe2 layer with an abrupt interface was formed. Both the diffusion of Ga into Ag2Te and the growth of AgGaTe2 occurred simultaneously. It was confirmed that uniform AgGaTe2 layers could be formed without any traces of the Ag2Te layer or melt-back etching by tuning the growth parameters. A solar cell was also fabricated using the p-AgGaTe2/n-Si heterojunction. This solar cell showed conversion efficiency of approximately 3%.

  19. EXAMINATION OF DISLOCATIONS IN LATTICE-MISMATCHED GaInAs/BUFFER LAYER/GaAs FOR III-V PHOTOVOLTAICS

    SciTech Connect

    Levander, A.; Geisz, J.

    2007-01-01

    Dislocations act as sites for nonradiative electron/hole pair recombination, which reduces the effi ciency of photovoltaics. Lattice-matched materials can be grown on top of one another without forming a high density of dislocations. However, when the growth of lattice-mismatched (LMM) materials is attempted, many dislocations result from the relaxation of strain in the crystal structure. In an attempt to reduce the number of dislocations that propagate into a solar device when using LMM materials, a compositionally step-graded buffer is placed between the two LMM materials. In order to confi ne the dislocations to the buffer layer and therefore increase material quality and device effi ciency, the growth temperature and thickness of the buffer layer were varied. A GaInP compositionally graded buffer and GaInAs p-n junction were grown on a GaAs substrate in a metal-organic chemical vapor deposition (MOCVD) system. A multibeam optical stress sensor (MOSS) and X-ray diffraction (XRD) were used to characterize the strain in the epilayers. Electrical and optoelectronic properties were measured using a probe station and multimeter setup, solar simulator, and a quantum effi ciency instrument. It was determined that device functionality was highly dependent on the growth temperature of the graded buffer. As growth temperature increased, so did the dislocation density in the device despite an increase in the dislocation velocity, which should have increased the dislocation annihilation rate and the diffusion of dislocations to the edge of the crystal. The thickness of the graded buffer also affected device effi ciency with thinner samples performing poorly. The thinner graded buffer layers had high internal resistances from reduced carrier concentrations. In terms of effi ciency, the empirically derived recipe developed by the scientists at the National Renewable Energy Laboratory (NREL) produced the highest quality cells.

  20. Near independence of OLED operating voltage on transport layer thickness

    SciTech Connect

    Swensen, James S.; Wang, Liang; Polikarpov, Evgueni; Rainbolt, James E.; Koech, Phillip K.; Cosimbescu, Lelia; Padmaperuma, Asanga B.

    2013-01-01

    We report organic light emitting devices (OLEDs) with weak drive voltage dependence on the thickness of the hole transport layer (HTL) for thicknesses up to 1150 Å using the N,N′-Bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzidine (α-NPD) and N,N'-bis(3-methyl phenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'diamine (TPD), both of which have hole mobilities in the range of 2 × 10-3 cm2V-1s-1. Lower mobility HTL materials show larger operating voltage dependence on thickness. The near independence of the operating voltage for high mobility transport material thickness was only observed when the energy barrier for charge injection into the transport material was minimized. To ensure low injection barriers, a thin film of 2-(3-(adamantan-1-yl)propyl)-3,5,6-trifluorotetracyanoquinodimethane (F3TCNQ-Adl) was cast from solution onto the ITO surface. These results indicate that thick transport layers can be integrated into OLED stacks without the need for bulk conductivity doping.

  1. Terahertz reflection interferometry for automobile paint layer thickness measurement

    NASA Astrophysics Data System (ADS)

    Rahman, Aunik; Tator, Kenneth; Rahman, Anis

    2015-05-01

    Non-destructive terahertz reflection interferometry offers many advantages for sub-surface inspection such as interrogation of hidden defects and measurement of layers' thicknesses. Here, we describe a terahertz reflection interferometry (TRI) technique for non-contact measurement of paint panels where the paint is comprised of different layers of primer, basecoat, topcoat and clearcoat. Terahertz interferograms were generated by reflection from different layers of paints on a metallic substrate. These interferograms' peak spacing arising from the delay-time response of respective layers, allow one to model the thicknesses of the constituent layers. Interferograms generated at different incident angles show that the interferograms are more pronounced at certain angles than others. This "optimum" angle is also a function of different paint and substrate combinations. An automated angular scanning algorithm helps visualizing the evolution of the interferograms as a function of incident angle and also enables the identification of optimum reflection angle for a given paint-substrate combination. Additionally, scanning at different points on a substrate reveals that there are observable variations from one point to another of the same sample over its entire surface area. This ability may be used as a quality control tool for in-situ inspection in a production line. Keywords: Terahertz reflective interferometry, Paint and coating layers, Non-destructive

  2. Compression response of thick layer composite laminates with through-the-thickness reinforcement

    NASA Technical Reports Server (NTRS)

    Farley, Gary L.; Smith, Barry T.; Maiden, Janice

    1992-01-01

    Compression and compression-after-impact (CAI) tests were conducted on seven different AS4-3501-6 (0/90) 0.64-cm thick composite laminates. Four of the seven laminates had through-the-thickness (TTT) reinforcement fibers. Two TTT reinforcement methods, stitching and integral weaving, and two reinforcement fibers, Kevlar and carbon, were used. The remaining three laminates were made without TTT reinforcements and were tested to establish a baseline for comparison with the laminates having TTT reinforcement. Six of the seven laminates consisted of nine thick layers whereas the seventh material was composed of 46 thin plies. The use of thick-layer material has the potential for reducing structural part cost because of the reduced part count (layers of material). The compression strengths of the TTT reinforced laminates were approximately one half those of the materials without TTT reinforcements. However, the CAI strengths of the TTT reinforced materials were approximately twice those of materials without TTT reinforcements. The improvement in CAI strength is due to an increase in interlaminar strength produced by the TTT reinforcement. Stitched laminates had slightly higher compression and CAI strengths than the integrally woven laminates.

  3. Magnetooptical and crystalline properties of sputtered garnet ferrite film on spinel ferrite buffer layer

    NASA Astrophysics Data System (ADS)

    Furuya, Akinori; Sasaki, Ai-ichiro; Morimura, Hiroki; Kagami, Osamu; Tanabe, Takaya

    2016-09-01

    The purpose of this study is to provide garnet films for volumetric magnetic holography. Volumetric magnetic holography usually employs an easily obtainable short-wavelength laser (visible light, not infrared light) with a large diffraction intensity. Bi-substituted garnet ferrite with a large Faraday rotation is promising for volumetric magnetic holography applications in the visible light region. However, a garnet film without a deteriorated layer must be obtained because a deteriorated layer (minute polycrystalline grains containing an amorphous phase) is formed during the initial deposition on a glass substrate. In particular, the required magnetooptical properties have not been obtained in a thin garnet film (100 nm or less) after annealing (1 h, 700 °C, oxygen atmosphere). Therefore, there is a need for excellent garnet films with the required magnetooptical (MO) properties even if the films are thin. By using a spinel ferrite buffer layer for garnet film deposition, we could obtain a thin garnet film with excellent MO properties. We determined the effect of the initial buffer layer on the crystallinity of the deposited garnet films by observing the film cross section. In addition, we undertook a qualitative estimation of the influence of the crystallinity and optical properties of the garnet film on a glass substrate with a spinel ferrite buffer layer.

  4. Improved performance of microcrystalline silicon solar cell with graded-band-gap silicon oxide buffer layer

    NASA Astrophysics Data System (ADS)

    Shi, Zhen-Liang; Ji, Yun; Yu, Wei; Yang, Yan-Bin; Cong, Ri-Dong; Chen, Ying-Juan; Li, Xiao-Wei; Fu, Guang-Sheng

    2015-07-01

    Microcrystalline silicon (μc-Si:H) solar cell with graded band gap microcrystalline silicon oxide (μc-SiOx:H) buffer layer is prepared by plasma enhanced chemical vapor deposition and exhibits improved performance compared with the cell without it. The buffer layer moderates the band gap mismatch by reducing the barrier of the p/i interface, which promotes the nucleation of the i-layer and effectively eliminates the incubation layer, and then enhances the collection efficiency of the cell in the short wavelength region of the spectrum. The p/i interface defect density also decreases from 2.2 × 1012 cm-2 to 5.0 × 1011 cm-2. This graded buffer layer allows to simplify the deposition process for the μc-Si:H solar cell application. Project supported by the Key Basic Research Project of Hebei Province, China (Grant Nos. 12963930D and 12963929D), the Natural Science Foundation of Hebei Province, China (Grant Nos. F2013201250 and E2012201059), and the Science and Technology Research Projects of the Education Department of Hebei Province, China (Grant No. ZH2012030).

  5. Quantification of cell-free layer thickness and cell distribution of blood by optical coherence tomography

    NASA Astrophysics Data System (ADS)

    Lauri, Janne; Bykov, Alexander; Fabritius, Tapio

    2016-04-01

    A high-speed optical coherence tomography (OCT) with 1-μm axial resolution was applied to assess the thickness of a cell-free layer (CFL) and a spatial distribution of red blood cells (RBC) next to the microchannel wall. The experiments were performed in vitro in a plain glass microchannel with a width of 2 mm and height of 0.2 mm. RBCs were suspended in phosphate buffered saline solution at the hematocrit level of 45%. Flow rates of 0.1 to 0.5 ml/h were used to compensate gravity induced CFL. The results indicate that OCT can be efficiently used for the quantification of CFL thickness and spatial distribution of RBCs in microcirculatory blood flow.

  6. Ultraviolet-ozone-treated PEDOT:PSS as anode buffer layer for organic solar cells

    PubMed Central

    2012-01-01

    Ultraviolet-ozone-treated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)was used as the anode buffer layer in copper phthalocyanine (CuPc)/fullerene-based solar cells. The power conversion efficiency of the cells with appropriated UV-ozone treatment was found to increase about 20% compared to the reference cell. The improved performance is attributed to the increased work function of the PEDOT:PSS layer, which improves the contact condition between PEDOT:PSS and CuPc, hence increasing the extraction efficiency of the photogenerated holes and decreasing the recombination probability of holes and electrons in the active organic layers. PMID:22901365

  7. Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

    NASA Astrophysics Data System (ADS)

    Wang, Lan; Lin, Xianzhong; Ennaoui, Ahmed; Wolf, Christian; Lux-Steiner, Martha Ch.; Klenk, Reiner

    2016-02-01

    We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

  8. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

    DOEpatents

    Norman, Andrew

    2016-08-23

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

  9. Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO{sub 3} buffer layer

    SciTech Connect

    Wang Yuzhan; Wee, Andrew T. S.; Cao Liang; Qi Dongchen; Chen Wei; Gao Xingyu

    2012-08-01

    We demonstrate that the interfacial hole injection barrier {Delta}{sub h} between p-type organic materials (i.e., CuPc and pentacene) and Co substrate can be tuned by the insertion of a MoO{sub 3} buffer layer. Using ultraviolet photoemission spectroscopy, it was found that the introduction of MoO{sub 3} buffer layer effectively reduces the hole injection barrier from 0.8 eV to 0.4 eV for the CuPc/Co interface, and from 1.0 eV to 0.4 eV for the pentacene/Co interface, respectively. In addition, by varying the thickness of the buffer, the tuning effect of {Delta}{sub h} is shown to be independent of the thickness of MoO{sub 3} interlayer at both CuPc/Co and pentacene/Co interfaces. This Fermi level pinning effect can be explained by the integer charge-transfer model. Therefore, the MoO{sub 3} buffer layer has the potential to be applied in p-type organic spin valve devices to improve the device performance via reducing the interfacial hole injection barrier.

  10. Leidenfrost point and estimate of the vapour layer thickness

    NASA Astrophysics Data System (ADS)

    Gianino, Concetto

    2008-11-01

    In this article I describe an experiment involving the Leidenfrost phenomenon, which is the long lifetime of a water drop when it is deposited on a metal that is much hotter than the boiling point of water. The experiment was carried out with high-school students. The Leidenfrost point is measured and the heat laws are used to estimate the thickness of the vapour layer, d≈0.06 mm, which prevents the drop from touching the hotplate.

  11. Effects of buffer layers on the structural and electronic properties of InSb films

    SciTech Connect

    Weng, X.; Rudawski, N.G.; Wang, P.T.; Goldman, R.S.; Partin, D.L.; Heremans, J.

    2005-02-15

    We have investigated the effects of various buffer layers on the structural and electronic properties of n-doped InSb films. We find a significant decrease in room-temperature electron mobility of InSb films grown on low-misfit GaSb buffers, and a significant increase in room-temperature electron mobility of InSb films grown on high-misfit InAlSb or step-graded GaSb+InAlSb buffers, in comparison with those grown directly on GaAs. Plan-view transmission electron microscopy (TEM) indicates a significant increase in threading dislocation density for InSb films grown on the low-misfit buffers, and a significant decrease in threading dislocation density for InSb films grown on high-misfit or step-graded buffers, in comparison with those grown directly on GaAs. Cross-sectional TEM reveals the role of the film/buffer interfaces in the nucleation (filtering) of threading dislocations for the low-misfit (high-misfit and step-graded) buffers. A quantitative analysis of electron mobility and carrier-concentration dependence on threading dislocation density suggests that electron scattering from the lattice dilation associated with threading dislocations has a stronger effect on electron mobility than electron scattering from the depletion potential surrounding the dislocations. Furthermore, while lattice dilation is the predominant mobility-limiting factor in these n-doped InSb films, ionized impurity scattering associated with dopants also plays a role in limiting the electron mobility.

  12. Structural and electrical properties of Pb(Zr,Ti)O3 thin films on NiCr substrate modified by LaNiO3 and PbTiO3 buffer layers

    NASA Astrophysics Data System (ADS)

    He, Liang; Cheng, Jinrong; Meng, Zhongyan

    2004-12-01

    Ferroelectric Pb(Zr,Ti)O3 (PZT) thin films were deposited onto the NiCr (NC) substrate by using sol-gel techniques. LaNiO3 (LNO) and PbTiO3 (PT) buffer layers have been introduced to grow single-phase perovskite PZT thin films at the lower temperature of 550°C. The (110) preferred orientation of PZT thin films was favored using LNO and PT buffer layers. Dielectric constant and remnant polarization of PZT thin films on NC with a LNO buffer layer achieved ~ 430 and 13 μC/cm2 respectively. The ferroelectric P-E loops of PZT thin films were shifted towards the positive field by introducing LNO buffer layers. In addition, the coercive field and internal bias field increased with increasing the thickness of LNO layer.

  13. MBE grown III-V strain relaxed buffer layers and superlattices characterized by atomic force microscopy

    SciTech Connect

    Howard, A.J.; Fritz, I.J.; Drummond, T.J.; Olsen, J.A.; Hammons, B.E.; Kurtz, S.R.; Brennan, T.M.

    1993-11-01

    Using atomic force microscopy (AFM), the authors have investigated the effects of growth temperature and dopant incorporation on the surface morphology of MBE grown graded buffer layers and strained layer superlattices (SLSs) in the InGaAlAs/GaAs and InAsSb/InSb material systems. The AFM results show quantitatively that over the temperature range from 380 to 545 C, graded in{sub x}Al{sub 1{minus}x}As(x = 0.05 {minus} 0.32) buffer layers grown at high temperatures ({approximately}520 C), and graded In{sub x}Ga{sub 1{minus}x}As (x = 0.05 {minus} 0.33) buffer layers and In{sub 0.4}Ga{sub 0.6}As/In{sub 0.26}Al{sub 0.35}Ga{sub 0.39}As SLSs grown at low temperatures ({approximately}400 C) have the lowest RMS roughness. Also, for SLSs InAs{sub 0.21}Sb{sub 0.79}/InSb, undoped layers grown at 470 C were smoother than undoped layers grown at 420 C and Be-doped layers grown at 470 C. These results illustrate the role of surface tension in the growth of strained layer materials near the melting temperature of the InAs{sub x}Sb{sub {minus}x}/InSb superlattice. Nomarski interference and transmission electron microscopies, IR photoluminescence, x-ray diffraction, and photocurrent spectroscopy were also used to evaluate the relative quality of the material but usually, the results were not conclusive.

  14. Performance of organic photovoltaics using an ytterbium trifluoride n-type buffer layer

    NASA Astrophysics Data System (ADS)

    Ji, Chan Hyuk; Jang, Ji Min; Oh, Se Young

    2016-03-01

    Ytterbium trifluoride (YbF3) was used as an n-type cathode buffer layer in conventional poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PC60BM) bulk heterojunction (BHJ) organic photovoltaic cells. This buffer layer acts as an electron-transport layer and improves the open circuit voltage ( V oc), power conversion efficiency (PCE), and interfacial durability of the device. The physical properties and performance of the device were studied using impedance spectroscopy, photocurrent measurements, ultraviolet photoelectron spectroscopy, and atomic force microscopy. The PCE reached to 3.2% with a 65% fill factor under 1 sun irradiation. The PCE decreased to half of its original value after 120 h at room temperature in air or 24 h at 70°C in air. Comparison with Yb and TiOx cathode buffer layers reveals that YbF3 has superior performance and longevity. These findings suggest that YbF3 has the potential to replace costly device encapsulation. [Figure not available: see fulltext.

  15. Electron dynamics of the buffer layer and bilayer graphene on SiC

    SciTech Connect

    Shearer, Alex J.; Caplins, Benjamin W.; Suich, David E.; Harris, Charles B.; Johns, James E.; Hersam, Mark C.

    2014-06-09

    Angle- and time-resolved two-photon photoemission (TPPE) was used to investigate electronic states in the buffer layer of 4H-SiC(0001). An image potential state (IPS) series was observed on this strongly surface-bound buffer layer, and dispersion measurements indicated free-electron-like behavior for all states in this series. These results were compared with TPPE taken on bilayer graphene, which also show the existence of a free-electron-like IPS series. Lifetimes for the n = 2, and n = 3 states were obtained from time-resolved TPPE; slightly increased lifetimes were observed in the bilayer graphene sample for the n = 2 the n = 3 states. Despite the large band gap of graphene at the center of the Brillouin zone, the lifetime results demonstrate that the graphene layers do not behave as a simple tunneling barrier, suggesting that the buffer layer and graphene overlayers play a direct role in the decay of IPS electrons.

  16. Exploring Cd-Zn-O-S alloys for optimal buffer layers in thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Varley, J.; He, X.; Mackie, N.; Rockett, A.; Lordi, V.

    2015-03-01

    The development of thin-film photovoltaics has largely focused on alternative absorber materials, while the choices for other layers in the solar cell stack have remained somewhat limited. In particular, cadmium sulfide (CdS) is widely used as the buffer layer in typical record devices utilizing absorbers like Cu(In,Ga)Se2 (CIGSe) or Cu2ZnSnS4 (CZTS) despite leading to a loss of solar photocurrent due to its band gap of 2.4 eV. While different buffers such as Zn(S,O,OH) are beginning to become competitive with CdS, the identification of additional wider-band gap alternatives with electrical properties comparable to or better than CdS is highly desirable. Here we use hybrid functional calculations to characterize CdxZn1-xOyS1-y candidate buffer layers in the quaternary phase space composed by Cd, Zn, O, and S. We focus on the band gaps and band offsets of the alloys to assess strategies for improving absorption losses from conventional CdS buffers while maintaining similar conduction band offsets known to facilitate good device performance. We also consider additional criteria such as lattice matching to identify regions in the composition space that may provide improved epitaxy to CIGSe and CZTS absorbers. Lastly, we incorporate our calculated alloy properties into simulations of typical CIGSe devices to identify the CdxZn1-xOyS1-y buffer compositions that lead to the best performance. This work performed under the auspices of the USDoE by LLNL under Contract DE-AC52-07NA27344 and funded by the DoE EERE through the SunShot BRIDGE program.

  17. Reel-to-reel deposition of epitaxial double-sided MgO buffer layers for coated conductors

    NASA Astrophysics Data System (ADS)

    Xue, Yan; Xiong, Jie; Zhang, Yahui; Zhang, Fei; Zhao, Rui-Peng; Hui, Wang; Wang, Quiling; Cheng, Guo; Zhao, Xiao-Hui; Tao, Bo-Wan

    2016-06-01

    We have successfully employed a double-sided process to deposit MgO buffer layers on both sides of amorphous Y2O3 surface for double-sided YBa2Cu3O7-δ (YBCO) coated conductors (CCs) for the first time, the structure of which is of great prospect to improve the performance and cut the production cost. The biaxial textures of MgO buffer layer are noticeably affected by the ion energy and film thickness, which is demonstrated by X-ray diffraction. The best biaxial texture of double-sided MgO films shows ω-scan of (002) MgO and Φ-scan of (220) MgO yield full width at half maximum values of 4° and 7.8° for one side, respectively, as well as 3.5° and 6.7° for the other side. The subsequent double-sided YBCO films are deposited on the as-prepared MgO template with entire critical current of over 300 A/cm for both sides.

  18. Minimum Wind Dynamic Soaring Trajectories under Boundary Layer Thickness Limits

    NASA Astrophysics Data System (ADS)

    Bousquet, Gabriel; Triantafyllou, Michael; Slotine, Jean-Jacques

    2015-11-01

    Dynamic soaring is the flight technique where a glider, either avian or manmade, extracts its propulsive energy from the non-uniformity of horizontal winds. Albatrosses have been recorded to fly an impressive 5000 km/week at no energy cost of their own. In the sharp boundary layer limit, we show that the popular image, where the glider travels in a succession of half turns, is suboptimal for travel speed, airspeed, and soaring ability. Instead, we show that the strategy that maximizes the three criteria simultaneously is a succession of infinitely small arc-circles connecting transitions between the calm and windy layers. The model is consistent with the recordings of albatross flight patterns. This lowers the required wind speed for dynamic soaring by over 50% compared to previous beliefs. In the thick boundary layer limit, energetic considerations allow us to predict a minimum wind gradient necessary for sustained soaring consistent with numerical models.

  19. Ultrathin Polyaniline-based Buffer Layer for Highly Efficient Polymer Solar Cells with Wide Applicability

    PubMed Central

    Zhao, Wenchao; Ye, Long; Zhang, Shaoqing; Fan, Bin; Sun, Mingliang; Hou, Jianhui

    2014-01-01

    Interfacial buffer layers often attribute the improved device performance in organic optoelectronic device. Herein, a water-soluble hydrochloric acid doped polyanilines (HAPAN) were utilized as p-type electrode buffer layer in highly efficient polymer solar cells (PSC) based on PBDTTT-EFT and several representative polymers. The PBDTTT-EFT-based conventional PSC featuring ultrathin HAPAN (1.3 nm) delivered high PCE approximately 9%, which is one of the highest values among conventional PSC devices. Moreover, ultrathin HAPAN also exhibited wide applicability in a variety of efficient photovoltaic polymers including PBDTTT-C-T, PTB7, PBDTBDD, PBTTDPP-T, PDPP3T and P3HT. The excellent performances were originated from the high transparency, small film roughness and suitable work function. PMID:25300365

  20. Selective growth of Pb islands on graphene/SiC buffer layers

    SciTech Connect

    Liu, X. T.; Miao, Y. P.; Ma, D. Y.; Hu, T. W.; Ma, F. E-mail: kwxu@mail.xjtu.edu.cn; Chu, Paul K.; Xu, K. W. E-mail: kwxu@mail.xjtu.edu.cn

    2015-02-14

    Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 6√(3) reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.

  1. Protein adsorption on poly(N-isopropylacrylamide)-modified silicon surfaces: effects of grafted layer thickness and protein size.

    PubMed

    Yu, Qian; Zhang, Yanxia; Chen, Hong; Wu, Zhaoqiang; Huang, He; Cheng, Chi

    2010-04-01

    In this work, we investigated the protein adsorption on the end-tethered thermoresponsive poly(N-isopropylacrylamide) (PNIPAAm) brushes with varying grafted layer thickness prepared via surface-initiated atom transfer radical polymerization (SI-ATRP) on initiator-immobilized silicon surfaces. The thickness of a grafted layer was modulated by adjusting reaction time and/or solvent composition. The surface properties as a function of thickness were investigated by water contact angle, X-ray photoelectron spectroscopy (XPS), and atomic force microscope (AFM). The influence of PNIPAAm-grafted layer thickness on human serum albumin (HSA) adsorption in phosphate-buffered saline (PBS) (pH 7.4) at different temperature was evaluated using a radiolabeling method. In a lower thickness range (<15 nm), protein adsorption on PNIPAAm-grafted layer shows a thermoresponsive change in a certain extent, but the variation is not remarkable. However, it is interesting to observe that these surfaces exhibit good protein-resistant property. For the surface with a PNIPAAm thickness of 13.4 nm, the HSA adsorption level measured at room temperature was approximately 7 ng/cm2, corresponding to a reduction of 97% compared to the unmodified silicon surface. For thicker PNIPAAm-grafted surface with thickness of 38.1 nm, the adsorption results of three proteins (HSA, fibrinogen, and lysozyme) with different sizes and charges indicate that the PNIPAAm-modified surface exhibits a size-sensitive property of protein adsorption. PMID:20045297

  2. ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

    DOEpatents

    Bhattacharya, Raghu N.

    2009-11-03

    The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

  3. Law-of-the-wall buffer layer explained by a simplified cospectral budget model

    NASA Astrophysics Data System (ADS)

    Mccoll, K. A.; Katul, G. G.; Gentine, P.; Entekhabi, D.

    2015-12-01

    A series of recent studies have shown that a model of the turbulent vertical velocity variance spectrum (Fvv) combined with a simplified cospectral budget can reproduce many macroscopic flow properties of turbulent wall-bounded flows, including various features of the mean-velocity profile (MVP), i.e., the "law of the wall". While the theory reasonably models the MVP's logarithmic layer, the modelled buffer layer displays insufficient curvature compared to measurements at moderate Reynolds number. The theory is re-examined here using a DNS dataset at moderate Reynolds number. Starting with several hypotheses for the cause of the 'missing' curvature, it is shown that it is mainly due to mismatches between (i) the modelled and DNS-observed pressure-strain terms in the cospectral budget and (ii) the DNS-observed Fvv and the idealized form used in the previous model. By replacing the current parameterization for the pressure-strain term with an expansive version that directly accounts for the presence of a wall, the modelled and DNS reported pressure-strain profiles match each other in the buffer and logarithmic layers. Forcing the new model with DNS-reported Fvv rather than the idealized form previously used reproduces the missing buffer layer curvature to high fidelity thereby confirming the "spectral link" between Fvv and the MVP. A major departure between the idealized Fvv previously employed and those reported from DNS is the invariance with distance from the wall of the cross-over scale to the inertial subrange in Fvv. This invariance is presumably due to the presence of streaks within the buffer region whose dimensions do not scale with distance from the wall. Comparisons between DNS reported and modeled cospectra are also discussed. A broad implication of this work is that much of the macroscopic properties of the flow (such as the MVP) may be derived from the energy distribution in turbulent eddies (i.e., Fvv) representing the microstates of the flow.

  4. A study of the factors effecting layer thickness uniformity and layer breakup in microlayered coextruded films

    NASA Astrophysics Data System (ADS)

    Ghumman, Bhavjit Singh

    Microlayer coextrusion offers the opportunity to economically commercialize the production of nanometer thick film. A major obstacle towards commercialization is the non-uniform thickness of these layers and their breakup into droplets, which is also known as a scattering instability. Prior research had indicated a strong interaction between material properties and process parameters. Therefore, the focus of this research effort was to better understand and then identify the coextrusion parameters and material properties that governed the layer non-uniformity and scattering. Initial studies had indicated that there existed an interaction between the two extruders, which gave rise to pressure fluctuations and non-uniform flow. The interaction of the two extruders was studied by analyzing the pressure signals at the two extruders and the junction of the two streams. A response surface method was used to analyze the two extruders individually, the number of layer multiplying elements and finally the interaction between the two extruders and the effect they had on pressure, surging, flow rate and torque. Although the interaction of the two extruders did result in higher backpressures, it did not decrease the output. The output was independent of the screw speed of the other extruder, however it did influence the melting mechanics along the screw. The more shear sensitive PMMA showed a greater degree of sensitivity than the Newtonian PC. The influence of primary; coextrusion, and secondary; chill roll, processing on the final layer thickness was studied in a second set of experiments. For this purpose primary coextrusion process parameters such as screw speed ratio, die temperature and core melt temperature were changed and the effect on the layer thickness uniformity was studied. Similarly secondary process parameters such as nip gap and chill roll speed were also investigated. Thickness was measured using an Atomic Force Microscope (AFM). The screw speed ratio was the

  5. High performance polymer solar cells with as-prepared zirconium acetylacetonate film as cathode buffer layer.

    PubMed

    Tan, Zhan'ao; Li, Shusheng; Wang, Fuzhi; Qian, Deping; Lin, Jun; Hou, Jianhui; Li, Yongfang

    2014-01-01

    Low-work-function active metals are commonly used as cathode in polymer solar cells (PSCs), but sensitivity of the active metals towards moisture and oxygen results in poor stability of the devices. Therefore, solution-proceessable and stable cathode buffer layer is of great importance for the application of PSCs. Here we demonstrate high performance PSCs by employing as-prepared zirconium acetylacetonate (a-ZrAcac) film spin-cast from its ethanol solution as cathode buffer layer. The PSCs based on a low bandgap polymer PBDTBDD as donor and PC60BM as acceptor with a-ZrAcac/Al cathode demonstrated an average power conversion efficiency (PCE) of 8.75% which is significantly improved than that of the devices with traditional Ca/Al cathode. The improved photovoltaic performance is benefitted from the decreased series resistance and enhanced light harvest of the PSCs with the a-ZrAcac/Al cathode. The results indicate that a-ZrAcac is a promising high performance cathode buffer layer for fabricating large area flexible PSCs. PMID:24732976

  6. Performance enhancement in inverted solar cells by interfacial modification of ZnO nanoparticle buffer layer.

    PubMed

    Ambade, Swapnil B; Ambade, Rohan B; Kim, Seojin; Park, Hanok; Yoo, Dong Jin; Leel, Soo-Hyoung

    2014-11-01

    Polymer solar cells (PSCs) have attracted increasing attention in recent years. The rapid progress and mounting interest suggest the feasibility of PSC commercialization. However, critical issues such as stability and the weak nature of their interfaces posses quite a challenge. In the context of improving stability, PSCs with inverted geometry consising of inorganic oxide layer acting as an n-buffer offer quite the panacea. Zinc oxide (ZnO) is one of the most preferred semiconducting wide band gap oxides as an efficient cathode layer that effectively extracts and transports photoelectrons from the acceptor to the conducting indium-doped tin oxide (ITO) due to its high conductivity and transparency. However, the existence of a back charge transfer from metal oxides to electron-donating conjugated polymer and poor contact with the bulk heterojunction (BHJ) active layer results in serious interfacial recombination and leads to relatively low photovoltaic performance. One approach to improving the performance and charge selectivity of these types of inverted devices consists of modifying the interface between the inorganic metal oxide (e.g., ZnO) and organic active layer using a sub-monolayer of interfacial materials (e.g., functional dyes). In this work, we demonstrate that the photovoltaic parameters of inverted solar cells comprising a thin overlayer of functional dyes over ZnO nanoparticle as an n-buffer layer are highly influenced by the anchoring groups they possess. While an inverted PSC containing an n-buffer of only ZnO exhibited an overall power conversion efficiency (PCE) of 2.87%, the devices with an interlayer of dyes containing functional cyano-carboxylic, cyano-cyano, and carboxylic groups exhibited PCE of 3.52%, 3.39%, and 3.21%, respectively, due to increased forward charge collection resulting from enhanced electronic coupling between the ZnO and BHJ active layers. PMID:25958563

  7. UV-ozone-treated ultra-thin NaF film as anode buffer layer on organic light emitting devices.

    PubMed

    Chen, Yu-Cheng; Kao, Po-Ching; Chu, Sheng-Yuan

    2010-06-21

    An ultra-thin NaF film was thermally deposited between ITO and NPB as the buffer layer and then treated with the ultraviolet (UV) ozone, in the fabrication of organic light emitting diodes (ITO/NaF/NPB/Alq(3)/LiF/Al) to study its effect on hole-injection properties. The treatment drastically transforms the role of NaF film from hole-blocking to hole-injecting. This transformation is elucidated using hole-only devices, energy band measurement, surface energy, surface polarity, and X-ray photoelectron spectra. With the optimal thickness (3 nm) of the UV-ozone-treated NaF layer, the device performance is significantly improved, with a turn-on voltage, maximum luminance, and maximum current efficiency of 2.5 V, 15700 cd/m(2), and 4.9 cd/A, respectively. Results show that NaF film is not only a hole-blocking layer, but also a promising hole-injecting layer after UV-ozone treatment. PMID:20588585

  8. Performance improvement of polymer solar cells by using a solution processible titanium chelate as cathode buffer layer

    NASA Astrophysics Data System (ADS)

    Tan, Zhan'ao; Yang, Chunhe; Zhou, Erjun; Wang, Xiang; Li, Yongfang

    2007-07-01

    A solution processible titanium chelate, titanium (diisopropoxide) bis (2,4-pentanedionate) (TIPD), was used as the cathode buffer layer in the polymer solar cells (PSCs) based on the blend of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] and [6,6]-phenyl-C61-butyric acid methyl ester. Introducing TIPD buffer layer reduced the interface resistance between the active layer and Al electrode, leading to a lower device resistance. The power conversion efficiency of the PSC with TIPD buffer layer reached 2.52% under the illumination of AM1.5, 100mW/cm2, which is increased by 51.8% in comparison with that (1.66%) of the device without TIPD buffer layer under the same experimental conditions.

  9. Usage of Neural Network to Predict Aluminium Oxide Layer Thickness

    PubMed Central

    Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

    2015-01-01

    This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A·dm−2 and 3 A·dm−2 for creating aluminium oxide layer. PMID:25922850

  10. Neutron supermirrors: an accurate theory for layer thickness computation

    NASA Astrophysics Data System (ADS)

    Bray, Michael

    2001-11-01

    We present a new theory for the computation of Super-Mirror stacks, using accurate formulas derived from the classical optics field. Approximations are introduced into the computation, but at a later stage than existing theories, providing a more rigorous treatment of the problem. The final result is a continuous thickness stack, whose properties can be determined at the outset of the design. We find that the well-known fourth power dependence of number of layers versus maximum angle is (of course) asymptotically correct. We find a formula giving directly the relation between desired reflectance, maximum angle, and number of layers (for a given pair of materials). Note: The author of this article, a classical opticist, has limited knowledge of the Neutron world, and begs forgiveness for any shortcomings, erroneous assumptions and/or misinterpretation of previous authors' work on the subject.

  11. Usage of neural network to predict aluminium oxide layer thickness.

    PubMed

    Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

    2015-01-01

    This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A · dm(-2) and 3 A · dm(-2) for creating aluminium oxide layer. PMID:25922850

  12. Thickness dependence of structural and transport properties of Co-doped BaFe2As2 on Fe buffered MgO substrates

    NASA Astrophysics Data System (ADS)

    Iida, Kazumasa; Hänisch, Jens; Trommler, Sascha; Haindl, Silvia; Kurth, Fritz; Hühne, Ruben; Schultz, Ludwig; Holzapfel, Bernhard

    2011-12-01

    We have investigated the influence of the superconducting layer thickness, d, on the structural and transport properties of Co-doped BaFe2As2 films deposited on Fe buffered MgO substrates by pulsed laser deposition. The superconducting transition temperature and the texture quality of Co-doped BaFe2As2 films improve with increasing d due to a gradual relief of the tensile strain. For d >= 90 nm an additional 110 textured component of Co-doped BaFe2As2 was observed, which leads to an upward shift in the angle-dependent critical current density at H \\parallel c . These results indicate that the grain boundaries created by the 110 textured component may contribute to the c-axis pinning.

  13. Ultrasonic eggshell thickness measurement for selection of layers.

    PubMed

    Kibala, Lucyna; Rozempolska-Rucinska, Iwona; Kasperek, Kornel; Zieba, Grzegorz; Lukaszewicz, Marek

    2015-10-01

    This study aimed to develop a methodology for using ultrasonic technology (USG) to record eggshell thickness for selection of layers. Genetic correlations between eggshell strength and its thickness have been reported to be around 0.8, making shell thickness a selection index candidate element. Applying ultrasonic devices to measure shell thickness leaves an egg intact for further handling. In this study, eggs from 2 purebred populations of Rhode Island White (RIW) and Rhode Island Red (RIR) hens were collected on a single day in the 33rd week of the farm laying calendar from 2,414 RIR and 4,525 RIW hens. Beginning from the large end of the egg, measurements were taken at 5 latitudes: 0º (USG0), 45º (USG45), 90º (USG90), 135º (USG135), and 180º (USG180). To estimate the repeatability of readings, measurements were repeated at each parallel on 3 meridians. Electronic micrometer measurement ( EMM: ) were taken with an electronic micrometer predominantly at the wider end of eggs from 2,397 RIR and 4,447 RIW hens. A multiple-trait statistical model fit the fixed effect of year-of-hatch × hatch-within-year, and random effects due to repeated measurements (except EMM) and an animal's additive genetic component. The shell was thinnest in the region where chicks break it upon hatching (USG0, USG45). Heritabilities of shell thickness in different regions of the shell ranged from 0.09 to 0.19 (EMM) in RIW and from 0.12 to 0.23 (EMM) in RIR and were highest for USG45 and USG0. Because the measurement repeatabilities were all above 0.90, our recommendation for balancing egg strength against hatching ease is to take a single measurement of USG45. Due to high positive genetic correlations between shell thickness in different regions of the shell its thickness in the pointed end region will be modified accordingly, in response to selection for USG45. PMID:26316340

  14. Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO{sub 3}-buffered Si(001) substrates

    SciTech Connect

    McDaniel, Martin D.; Posadas, Agham; Ngo, Thong Q.; Dhamdhere, Ajit; Smith, David J.; Demkov, Alexander A.; Ekerdt, John G.

    2013-01-15

    Epitaxial strontium titanate (STO) films have been grown by atomic layer deposition (ALD) on Si(001) substrates with a thin STO buffer layer grown by molecular beam epitaxy (MBE). Four unit cells of STO grown by MBE serve as the surface template for ALD growth. The STO films grown by ALD are crystalline as-deposited with minimal, if any, amorphous SiO{sub x} layer at the STO-Si interface. The growth of STO was achieved using bis(triisopropylcyclopentadienyl)-strontium, titanium tetraisopropoxide, and water as the coreactants at a substrate temperature of 250 Degree-Sign C. In situ x-ray photoelectron spectroscopy (XPS) analysis revealed that the ALD process did not induce additional Si-O bonding at the STO-Si interface. Postdeposition XPS analysis also revealed sporadic carbon incorporation in the as-deposited films. However, annealing at a temperature of 250 Degree-Sign C for 30 min in moderate to high vacuum (10{sup -6}-10{sup -9} Torr) removed the carbon species. Higher annealing temperatures (>275 Degree-Sign C) gave rise to a small increase in Si-O bonding, as indicated by XPS, but no reduced Ti species were observed. X-ray diffraction revealed that the as-deposited STO films were c-axis oriented and fully crystalline. A rocking curve around the STO(002) reflection gave a full width at half maximum of 0.30 Degree-Sign {+-} 0.06 Degree-Sign for film thicknesses ranging from 5 to 25 nm. Cross-sectional transmission electron microscopy revealed that the STO films were continuous with conformal growth to the substrate and smooth interfaces between the ALD- and MBE-grown STO. Overall, the results indicate that thick, crystalline STO can be grown on Si(001) substrates by ALD with minimal formation of an amorphous SiO{sub x} layer using a four-unit-cell STO buffer layer grown by MBE to serve as the surface template.

  15. Tracing the sub-photospheric layers of optically thick winds

    NASA Astrophysics Data System (ADS)

    Graefener, G.

    2013-06-01

    Towards the end of their evolution hot massive stars develop strong stellar winds and appear as emission line stars, such as WR stars or LBVs. The quanitative description of the mass loss in these important pre-SN phases is hampered by unkowns such as wind clumping and porosity, and by an incomplete theoretical understanding of optically thick stellar winds. Even the stellar radii in these phases are badly undestood as they are often variable (LBVs), or deviate from theoretical expectations (WR stars). Here we present a new semi-empirical method that helps to tackle these problems. By analysing a large sample of Galactic WR stars we gain information about deep wind layers near the sonic point which are otherwise not directly observable. We find evidence that these layers are clumped, with clumping factors comparable to the ones observed in the winds of WR stars. Moreover, density and temperature near the sonic point seem to follow a relation which is ubiqitous for optically thick winds, and which may be responsible for the peculiar radius properties of these objects.

  16. Numerical Analysis of In2S3 Layer Thickness, Band Gap and Doping Density for Effective Performance of a CIGS Solar Cell Using SCAPS

    NASA Astrophysics Data System (ADS)

    Khoshsirat, Nima; Md Yunus, Nurul Amziah

    2016-07-01

    The effect of indium sulfide buffer layer's geometrical and electro-optical properties on the Copper-Indium-Gallium-diSelenide solar cell performance using numerical simulation is investigated. The numerical simulation software used is a solar cell capacitance simulator in (SCAPS). The innermost impacts of buffer layer thickness, band gap, and doping density on the cells output parameters such as open circuit voltage, short circuit current density, fill factor, and the efficiency were extensively simulated. The results show that the cell efficiency, which was innovatively illustrated as a two-dimensional contour plot function, depends on the buffer layer electron affinity and doping density by keeping all the other parameters at a steady state. The analysis, which was made from this numerical simulation, has revealed that the optimum electron affinity is to be 4.25 ± 0.2 eV and donor density of the buffer layer is over 1× 10 ^{17} cm^{-3} . It is also shown that the cell with an optimum thin buffer layer has higher performance and efficiency due to the lower optical absorption of the buffer layer.

  17. Highly Reliable 0.15 μm/14 F2 Cell Ferroelectric Random Access Memory Capacitor Using SrRuO3 Buffer Layer

    NASA Astrophysics Data System (ADS)

    Heo, Jang‑Eun; Bae, Byoung‑Jae; Yoo, Dong‑Chul; Nam, Sang‑Don; Lim, Ji‑Eun; Im, Dong‑Hyun; Joo, Suk‑Ho; Jung, Yong‑Ju; Choi, Suk‑Hun; Park, Soon‑Oh; Kim, Hee‑Seok; Chung, U‑In; Moon, Joo‑Tae

    2006-04-01

    We investigated a novel technique of modifying the interface between a Pb(ZrxTi1-x)O3 (PZT) thin film and electrodes for high density 64 Mbit ferroelectric random access memory (FRAM) device. Using a SrRuO3 buffer layer, we successfully developed highly reliable 0.15 μm/14 F2 cell FRAM capacitors with 75-nm-thick polycrystalline PZT thin films. The SrRuO3 buffer layer greatly enhanced ferroelectric characteristics due to the decrease in interfacial defect density. In PZT capacitors with a total thickness of 180 nm for whole capacitor stack, a remnant polarization of approximately 42 μC/cm2 was measured with a 1.4 V operation. In addition, an opposite state remnant polarization loss of less than 15% was observed after baking at 150 °C for 100 h. In particular, we found that the SrRuO3 buffer layer also played a key role in inhibiting the diffusion of Pb and O from the PZT thin films.

  18. Buffer Layer Effects on Tandem InGaAs TPV Devices

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

    2004-01-01

    Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of

  19. Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

    NASA Technical Reports Server (NTRS)

    Valco, George J.; Rohrer, Norman J.; Pouch, John J.; Warner, Joseph D.; Bhasin, Kul B.

    1988-01-01

    Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

  20. Versatile buffer layer architectures based on Ge1-xSnx alloys

    NASA Astrophysics Data System (ADS)

    Roucka, R.; Tolle, J.; Cook, C.; Chizmeshya, A. V. G.; Kouvetakis, J.; D'Costa, V.; Menendez, J.; Chen, Zhihao D.; Zollner, S.

    2005-05-01

    We describe methodologies for integration of compound semiconductors with Si via buffer layers and templates based on the GeSn system. These layers exhibit atomically flat surface morphologies, low defect densities, tunable thermal expansion coefficients, and unique ductile properties, which enable them to readily absorb differential stresses produced by mismatched overlayers. They also provide a continuous selection of lattice parameters higher than that of Ge, which allows lattice matching with technologically useful III-V compounds. Using this approach we have demonstrated growth of GaAs, GeSiSn, and pure Ge layers at low temperatures on Si(100). These materials display extremely high-quality structural, morphological, and optical properties opening the possibility of versatile integration schemes directly on silicon.

  1. ZnO buffer layer for metal films on silicon substrates

    DOEpatents

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  2. ZnO-SiO2 solar-blind photodetectors on flexible polyethersulfone substrate with organosilicon buffer layer

    NASA Astrophysics Data System (ADS)

    Lai, Wei-Chih; Chen, Jiun-Ting; Yang, Ya-Yu

    2013-05-01

    The ZnO-SiO2 nanocomposite solar-blind metal-semiconductor-metal photodetectors (PDs) on flexible polyethersulfone (PES) with an organosilicon (SiOx(CH3)) buffer layer improved the -10 V-biased responsivity of PDs illuminated wavelength of 240 nm from 0.75 A/W (without SiOx(CH3) buffer layer) to 3.86 A/W and the deep-ultraviolet (DUV)-visible rejection ratio of PDs from 8.10 × 104 (without SiOx(CH3) buffer layer) to 1.75 × 105. Moreover, the inserted SiOx(CH3) buffer layer would reduce the responsivity and DUV-visible rejection ratio of degradation of the severely bended ZnO-SiO2 nanocomposite PDs on PES.

  3. Effects of the nano-tubular anodic TiO2 buffer layer on bioactive hydroxyapatite coating.

    PubMed

    Piao, Zhonglie; Qiu, Jijun; Wu, Yongqing; Park, Se-Jeong; He, Weizhen; Timur, A; Ryu, Su-Chak; Kim, Hyung-Kook; Hwang, Yoon-Hwae

    2011-01-01

    We studied the effect of nano-tubular anodic TiO2 buffer layers on hydroxyapatite (HA) coating. The pulsed laser deposition (PLD) method was used to deposit HA on a well arranged nano-tubular anodic TiO2 (NT-ATO) buffer layer prepared by an electrochemical anodization technique. The surface morphology and chemical composition of HA coatings were characterized by using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and contact angle measurement. We found that crystalline HA coatings show well arranged porous morphologies with a favorable surface wettability. We also found that an anodic nano-tubular TiO2 buffer layer with a relatively short tube length shows a better coating morphology. The deposition process of HA on the nanotubular TiO2 buffer layer was also proposed. PMID:21446441

  4. Structure, Optical Absorption, and Performance of Organic Solar Cells Improved by Gold Nanoparticles in Buffer Layers.

    PubMed

    Yang, Yingguo; Feng, Shanglei; Li, Meng; Wu, Zhongwei; Fang, Xiao; Wang, Fei; Geng, Dongping; Yang, Tieying; Li, Xiaolong; Sun, Baoquan; Gao, Xingyu

    2015-11-11

    11-Mercaptoundecanoic acid (MUA)-stabilized gold nanoparticles (AuNPs) embedded in copper phthalocyanine (CuPc) were used as a buffer layer between a poly(3-hexyl-thiophene) (P3HT)/[6,6]-phenyl C61-butyric acid methyl ester (PCBM) bulk heterojunction and anodic indium-tin oxide (ITO) substrate. As systematic synchrotron-based grazing incidence X-ray diffraction (GIXRD) experiments demonstrated that the AuNPs present in the buffer layer can improve the microstructure of the active layer with a better lamella packing of P3HT from the surface to the interior, UV-visible absorption spectrum measurements revealed enhanced optical absorption due to the localized surface plasma resonance (LSPR) generated by the AuNPs. The device of ITO/poly(3,4-ethylenedioxythiophene):polystyrenesulfonate/CuPc:MUA-stabilized AuNPs/P3HT:PCBM/LiF/Al was found with over 24% enhancement of power conversion efficiency (PCE) in comparison with reference devices without AuNPs. This remarkable improvement in PCE should be partially attributed to LSPR generated by the AuNPs and partially to improved crystallization as well as preferred orientation order of P3HT due to the presence of the AuNPs, which would promote more applications of metal NPs in the organic photovoltaic devices and other organic multilayer devices. PMID:26477556

  5. Co-solvent enhanced zinc oxysulfide buffer layers in Kesterite copper zinc tin selenide solar cells.

    PubMed

    Steirer, K Xerxes; Garris, Rebekah L; Li, Jian V; Dzara, Michael J; Ndione, Paul F; Ramanathan, Kannan; Repins, Ingrid; Teeter, Glenn; Perkins, Craig L

    2015-06-21

    A co-solvent, dimethylsulfoxide (DMSO), is added to the aqueous chemical "bath" deposition (CBD) process used to grow ZnOS buffer layers for thin film Cu2ZnSnSe4 (CZTSe) solar cells. Device performance improves markedly as fill factors increase from 0.17 to 0.51 upon the co-solvent addition. X-ray photoelectron spectroscopy (XPS) analyses are presented for quasi-in situ CZTSe/CBD-ZnOS interfaces prepared under an inert atmosphere and yield valence band offsets equal to -1.0 eV for both ZnOS preparations. When combined with optical band gap data, conduction band offsets exceed 1 eV for the water and the water/DMSO solutions. XPS measurements show increased downward band bending in the CZTSe absorber layer when the ZnOS buffer layer is deposited from water only. Admittance spectroscopy data shows that the ZnOS deposited from water increases the built-in potential (Vbi) yet these solar cells perform poorly compared to those made with DMSO added. The band energy offsets imply an alternate form of transport through this junction. Possible mechanisms are discussed, which circumvent the otherwise large conduction band spike between CZTSe and ZnOS, and improve functionality with the low-band gap absorber, CZTSe (Eg = 0.96 eV). PMID:26000570

  6. Surface plasmon enhanced organic solar cells with a MoO3 buffer layer.

    PubMed

    Su, Zisheng; Wang, Lidan; Li, Yantao; Zhang, Guang; Zhao, Haifeng; Yang, Haigui; Ma, Yuejia; Chu, Bei; Li, Wenlian

    2013-12-26

    High-efficiency surface plasmon enhanced 1,1-bis-(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane:C70 small molecular bulk heterojunction organic solar cells with a MoO3 anode buffer layer have been demonstrated. The optimized device based on thermal evaporated Ag nanoparticles (NPs) shows a power conversion efficiency of 5.42%, which is 17% higher than the reference device. The improvement is attributed to both the enhanced conductivity and increased absorption due to the near-field enhancement of the localized surface plasmon resonance of Ag NPs. PMID:24320799

  7. a Spatio-Temporal Framework for Modeling Active Layer Thickness

    NASA Astrophysics Data System (ADS)

    Touyz, J.; Streletskiy, D. A.; Nelson, F. E.; Apanasovich, T. V.

    2015-07-01

    The Arctic is experiencing an unprecedented rate of environmental and climate change. The active layer (the uppermost layer of soil between the atmosphere and permafrost that freezes in winter and thaws in summer) is sensitive to both climatic and environmental changes, and plays an important role in the functioning, planning, and economic activities of Arctic human and natural ecosystems. This study develops a methodology for modeling and estimating spatial-temporal variations in active layer thickness (ALT) using data from several sites of the Circumpolar Active Layer Monitoring network, and demonstrates its use in spatial-temporal interpolation. The simplest model's stochastic component exhibits no spatial or spatio-temporal dependency and is referred to as the naïve model, against which we evaluate the performance of the other models, which assume that the stochastic component exhibits either spatial or spatio-temporal dependency. The methods used to fit the models are then discussed, along with point forecasting. We compare the predicted fit of the various models at key study sites located in the North Slope of Alaska and demonstrate the advantages of space-time models through a series of error statistics such as mean squared error, mean absolute and percent deviance from observed data. We find the difference in performance between the spatio-temporal and remaining models is significant for all three error statistics. The best stochastic spatio-temporal model increases predictive accuracy, compared to the naïve model, of 33.3%, 36.2% and 32.5% on average across the three error metrics at the key sites for a one-year hold out period.

  8. Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

    SciTech Connect

    Cerio, Frank

    2013-09-14

    The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance

  9. Accretion disk boundary layers in cataclysmic variables. 1: Optically thick boundary layers

    NASA Technical Reports Server (NTRS)

    Popham, Robert; Narayan, Ramesh

    1995-01-01

    We develop numerical models of accretions disks in cataclysmic variables (CVs), including and emphasizing the boundary layer region where the accretion disk meets the accreting white dwarf. We confine ourselves to solutions where the boundary layer region is vertically optically thick, and find that these solutions share several common features. The angular and radial velocities of the accreting material drop rapidly in a dynamical boundary layer, which has a radial width approximately 1%-3% of the white dwarf radius. The energy dissipated in this region diffuses through the inner part of the disk and is radiated from the disk surface in a thermal boundary layer, which has a radial width comparable to the disk thickness, approximately 5%-15% of the white dwarf radius. We examine the dependence of the boundary layer structure on the mass accretion rate, the white dwarf mass and rotation rate, and the viscosity parameter alpha. We delineate the boundary between optically thick and optically thin boundary layer solutions as a function of these parameters and suggest that by means of a careful comparison with observations it may be possible to estimate alpha in CVs. We derive an expression for the total boundary layer luminosities as a function of the parameters and show that it agrees well with the luminosites of our numerical solutions. Finally, we calcuate simple blackbody continuum spectra of the boundary layer and disk emission for our solutions and compare these to soft X-ray, EUV, and He II emission-line observations of CVs. We show that, through such comparisons, it may be possible to determine the rotation rates of the accreting stars in CVs, and perhaps also the white dwarf masses and the accretion rates. The spectra are quite insensitive to alpha, so the uncertainty in this parameter does not affect such comparisons.

  10. Mild oxygen plasma treated PEDOT:PSS as anode buffer layer for vacuum deposited organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhou, Yunfei; Yuan, Yongbo; Lian, Jiarong; Zhang, Jie; Pang, Hongqi; Cao, Lingfang; Zhou, Xiang

    2006-08-01

    The surface morphology of PEDOT:PSS after mild oxygen plasma treatment were investigated by scanning electron microscopy and atomic force microscopy. The nanometer-scale islands on the surface of treated PEDOT:PSS were observed. Vacuum deposited organic light-emitting diodes (OLEDs) with treated PEDOT:PSS as anode buffer layer had been fabricated. The OLEDs with an appropriately treated PEDOT:PSS as anode buffer layer exhibited significantly enhanced lifetime and decreased driving voltage. The results suggest that the appropriate mild oxygen plasma treatment of PEDOT:PSS layers may be useful for the improvement of the interface with the hole transport layer and enhanced device performance.

  11. Thickness-induced structural phase transformation of layered gallium telluride.

    PubMed

    Zhao, Q; Wang, T; Miao, Y; Ma, F; Xie, Y; Ma, X; Gu, Y; Li, J; He, J; Chen, B; Xi, S; Xu, L; Zhen, H; Yin, Z; Li, J; Ren, J; Jie, W

    2016-07-28

    The thickness-dependent electronic states and physical properties of two-dimensional materials suggest great potential applications in electronic and optoelectronic devices. However, the enhanced surface effect in ultra-thin materials might significantly influence the structural stability, as well as the device reliability. Here, we report a spontaneous phase transformation of gallium telluride (GaTe) that occurred when the bulk was exfoliated to a few layers. Transmission electron microscopy (TEM) results indicate a structural variation from a monoclinic to a hexagonal structure. Raman spectra suggest a critical thickness for the structural transformation. First-principle calculations and thermodynamic analysis show that the surface energy and the interlayer interaction compete to dominate structural stability in the thinning process. A two-stage transformation process from monoclinic (m) to tetragonal (T) and then from tetragonal to hexagonal (h) is proposed to understand the phase transformation. The results demonstrate the crucial role of interlayer interactions in the structural stability, which provides a phase engineering strategy for device applications. PMID:27198938

  12. Dependence of Gold Nanoparticle Radiosensitization on Functionalizing Layer Thickness.

    PubMed

    Spaas, Cedric; Dok, Rüveyda; Deschaume, Olivier; De Roo, Bert; Vervaele, Mattias; Seo, Jin Won; Bartic, Carmen; Hoet, Peter; Van den Heuvel, Frank; Nuyts, Sandra; Locquet, Jean-Pierre

    2016-04-01

    Gold nanoparticles functionalized with polyethylene glycol of different chain lengths are used to determine the influence of the capping layer thickness on the radiosensitizing effect of the particles. The size variations in organic coating, built up with polyethylene glycol polymers of molecular weight 1-20 kDa, allow an evaluation of the decrease in dose enhancement percentages caused by the gold nanoparticles at different radial distances from their surface. With localized eradication of malignant cells as a primary focus, radiosensitization is most effective after internalization in the nucleus. For this reason, we performed controlled radiation experiments, with doses up to 20 Gy and particle diameters in a range of 5-30 nm, and studied the relaxation pattern of supercoiled DNA. Subsequent gel electrophoresis of the suspensions was performed to evaluate the molecular damage and consecutively quantify the gold nanoparticle sensitization. In conclusion, on average up to 58.4% of the radiosensitizing efficiency was lost when the radial dimensions of the functionalizing layer were increased from 4.1 to 15.3 nm. These results serve as an experimental supplement for biophysical simulations and demonstrate the influence of an important parameter in the development of nanomaterials for targeted therapies in cancer radiotherapy. PMID:26950059

  13. Hydrogenated amorphous silicon thin film solar cell with buffer layer of DNA-CTMA biopolymer

    NASA Astrophysics Data System (ADS)

    Son, Won-Ho; Reddy, M. Siva Pratap; Choi, Sie-Young

    2014-05-01

    The characteristics of nip-type a-Si:H thin film solar cells based on DNA-CTMA biopolymer was investigated. The DNA-CTMA was used as the buffer layer in nip-type a-Si:H solar cell. The Eopt of the DNA-CTMA biopolymer was measured with UV-VIS spectrometer. The Eopt of DNA-CTMA was determined as 3.96 eV by the plot of (Ahν)2 versus hν. All films of amorphous materials were deposited by PECVD method. The solar cell with a simple structure of glass/ITO/n-a-Si:H/i-a-Si:H/p-a-Si:H/DNA-CTMA/Al was fabricated. The various values of Voc, Jsc, FF, and conversion efficiency η were measured under 100 mW/cm2 (AM 1.5) solar simulator irradiation. Consequently, the resulting in solar cell showed an enhancement in conversion efficiency η compared to conventional nip-type a-Si:H solar cell without buffer layer of DNA-CTMA biopolymer.

  14. Buffer layers on metal surfaces having biaxial texture as superconductor substrates

    DOEpatents

    Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /Ni, (RE=Rare Earth), RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /CeO.sub.2 /Ni, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /CeO.sub.2 /Cu, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approaches, which include chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

  15. Fabrication of YSZ buffer layer by single source MOCVD technique for YBCO coated conductor

    NASA Astrophysics Data System (ADS)

    Jun, Byung-Hyuk; Sun, Jong-Won; Kim, Ho-Jin; Lee, Dong-Wook; Jung, Choong-Hwan; Park, Soon-Dong; Kim, Chan-Joong

    2003-10-01

    Yttria stabilized zirconia (YSZ) buffer layers were deposited by a metal organic chemical vapor deposition technique using a single liquid source for the application of YBa 2Cu 3O 7- δ (YBCO) coated conductor. Y:Zr mole ratio was 0.2:0.8, and tetrahydrofuran (THF) was used as a solvent. The (1 0 0) single crystal MgO substrate was used for searching the deposition conditions. Bi-axially oriented CeO 2 and NiO films were fabricated on {1 0 0} <0 0 1> textured Ni substrate by the same method and used as templates. At a constant working pressure of 10 Torr, the deposition temperatures (660-800 °C) and oxygen flow rates (100-500 sccm) were changed to find the optimum deposition condition. The best (1 0 0) oriented YSZ film on MgO was obtained at 740 °C and O 2 flow rate of 300 sccm. For a YSZ buffer layer with this deposition condition on a CeO 2/Ni template, full width half maximum values of the in-plane ( ϕ-scan) and out-of-plane ( ω-scan) alignments were 10.6° and 9.8°, respectively. The SEM image of YSZ film on CeO 2/Ni showed surface morphologies without microcracks. The film deposition rate was about 100 nm/min.

  16. Calcium manganate: A promising candidate as buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems

    SciTech Connect

    Zhao, Pengjun; Wang, Hongguang; Kong, Wenwen; Xu, Jinbao Wang, Lei; Ren, Wei; Bian, Liang; Chang, Aimin

    2014-11-21

    We have systematically studied the feasibility of CaMnO{sub 3} thin film, an n-type perovskite, to be utilized as the buffer layer for hybrid halide perovskite photovoltaic-thermoelectric device. Locations of the conduction band and the valence band, spontaneous polarization performance, and optical properties were investigated. Results indicate the energy band of CaMnO{sub 3} can match up well with that of CH{sub 3}NH{sub 3}PbI{sub 3} on separating electron-hole pairs. In addition, the consistent polarization angle helps enlarge the open circuit voltage of the composite system. Besides, CaMnO{sub 3} film shows large absorption coefficient and low extinction coefficient under visible irradiation, demonstrating high carrier concentration, which is beneficial to the current density. More importantly, benign thermoelectric properties enable CaMnO{sub 3} film to assimilate phonon vibration from CH{sub 3}NH3PbI{sub 3}. All the above features lead to a bright future of CaMnO{sub 3} film, which can be a promising candidate as a buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems.

  17. Uncovering the role of cathode buffer layer in organic solar cells

    NASA Astrophysics Data System (ADS)

    Qi, Boyuan; Zhang, Zhi-Guo; Wang, Jizheng

    2015-01-01

    Organic solar cells (OSCs) as the third generation photovoltaic devices have drawn intense research, for their ability to be easily deposited by low-cost solution coating technologies. However the cathode in conventional OSCs, Ca, can be only deposited by thermal evaporation and is highly unstable in ambient. Therefore various solution processible cathode buffer layers (CBLs) are synthesized as substitute of Ca and show excellent effect in optimizing performance of OSCs. Yet, there is still no universal consensus on the mechanism that how CBL works, which is evidently a critical scientific issue that should be addressed. In this article detailed studies are targeted on the interfacial physics at the interface between active layer and cathode (with and without treatment of a polar CBL) by using ultraviolet photoelectron spectroscopy, capacitance-voltage measurement, and impedance spectroscopy. The experimental data demonstrate that CBL mainly takes effect in three ways: suppressing surface states at the surface of active layer, protecting the active layer from being damaged by thermally evaporated cathode, and changing the energy level alignment by forming dipole moments with active layer and/or cathode. Our findings here provide a comprehensive picture of interfacial physics in devices with and without CBL.

  18. Uncovering the role of cathode buffer layer in organic solar cells.

    PubMed

    Qi, Boyuan; Zhang, Zhi-Guo; Wang, Jizheng

    2015-01-01

    Organic solar cells (OSCs) as the third generation photovoltaic devices have drawn intense research, for their ability to be easily deposited by low-cost solution coating technologies. However the cathode in conventional OSCs, Ca, can be only deposited by thermal evaporation and is highly unstable in ambient. Therefore various solution processible cathode buffer layers (CBLs) are synthesized as substitute of Ca and show excellent effect in optimizing performance of OSCs. Yet, there is still no universal consensus on the mechanism that how CBL works, which is evidently a critical scientific issue that should be addressed. In this article detailed studies are targeted on the interfacial physics at the interface between active layer and cathode (with and without treatment of a polar CBL) by using ultraviolet photoelectron spectroscopy, capacitance-voltage measurement, and impedance spectroscopy. The experimental data demonstrate that CBL mainly takes effect in three ways: suppressing surface states at the surface of active layer, protecting the active layer from being damaged by thermally evaporated cathode, and changing the energy level alignment by forming dipole moments with active layer and/or cathode. Our findings here provide a comprehensive picture of interfacial physics in devices with and without CBL. PMID:25588623

  19. Engineered oxide thin films as 100% lattice match buffer layers for YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Akin, Y.; Heiba, Z. K.; Sigmund, W.; Hascicek, Y. S.

    2003-12-01

    One of the most important qualities of buffer layers for RE-BCO coated conductors' growth is close lattice match with RE-BCO. However, there is no natural material with a 100% lattice match with RE-BCO. In this study mixtures of europium oxide (Eu 2O 3) and ytterbium oxide (Yb 2O 3), (Eu 1- uYb u) 2O 3 (0.0⩽ u⩽1.0), were investigated as a candidate buffer layer that could have same lattice parameter as YBa 2Cu 3O 7- δ(YBCO). Because the pseudocubic lattice parameter of Eu 2O 3 is bigger, and that of Yb 2O 3 is smaller than lattice parameter of YBCO, and the mixed oxides with appropriate ratio would have same lattice parameter of YBCO. The mixtures were prepared using metal-organic precursor by sol-gel process, and it was found that all mixed samples are single phase, complete solid solutions, and have same crystal system over the whole range of " u". Lattice parameters of mixed (Eu 1- uYb u) 2O 3 oxide powders were changed between 10.86831 and 10.42828 Å which are lattice parameter of Eu 2O 3 and Yb 2O 3, respectively by changing the ratio of Eu/Yb in the mixture. Phase and lattice parameter analysis revealed that pseudocubic lattice parameter of (Eu 0.893Yb 0.107) 2O 3 is 3.82 Å which is same as the lattice parameter of YBCO. Textured (Eu 0.893Yb 0.107) 2O 3 buffer layers were grown on biaxially textured-Ni (1 0 0) substrates. The solution was prepared from Europium and Ytterbium 2,4-pentadioanate, and was deposited on the Ni substrates using a reel-to-reel sol-gel dip coating system. The textured films were annealed at 1150 °C for 10 min under 4% H 2-Ar gas flow. Extensive texture analysis has been done to characterize the texture of (Eu 0.893Yb 0.107) 2O 3 buffer layers. X-ray diffraction (XRD) of the buffer layer showed strong out-of-plane orientation on Ni tape. The (Eu 0.893Yb 0.107) 2O 3 (2 2 2) pole figure indicated a single cube-on-cube textured structure. The omega and phi scans revealed good out-of-plane and in-plane alignments. The full

  20. The role of Ag buffer layer in Fe islands growth on Ge (111) surfaces

    SciTech Connect

    Fu, Tsu-Yi Wu, Jia-Yuan; Jhou, Ming-Kuan; Hsu, Hung-Chan

    2015-05-07

    Sub-monolayer iron atoms were deposited at room temperature on Ge (111)-c(2 × 8) substrates with and without Ag buffer layers. The behavior of Fe islands growth was investigated by using scanning tunneling microscope (STM) after different annealing temperatures. STM images show that iron atoms will cause defects and holes on substrates at room temperature. As the annealing temperature rises, iron atoms pull out germanium to form various kinds of alloyed islands. However, the silver layer can protect the Ag/Ge(111)-(√3×√3) reconstruction from forming defects. The phase diagram shows that ring, dot, and triangular defects were only found on Ge (111)-c(2 × 8) substrates. The kinds of islands found in Fe/Ge system are similar to Fe/Ag/Ge system. It indicates that Ge atoms were pulled out to form islands at high annealing temperatures whether there was a Ag layer or not. But a few differences in big pyramidal or strip islands show that the silver layer affects the development of islands by changing the surface symmetry and diffusion coefficient. The structure characters of various islands are also discussed.

  1. Artificially MoO3 graded ITO anodes for acidic buffer layer free organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Lee, Hye-Min; Kim, Seok-Soon; Kim, Han-Ki

    2016-02-01

    We report characteristics of MoO3 graded ITO anodes prepared by a RF/DC graded sputtering for acidic poly(3,4-ethylene dioxylene thiophene):poly(styrene sulfonic acid) (PEDOT:PSS)-free organic solar cells (OSCs). Graded sputtering of the MoO3 buffer layer on top of the ITO layer produced MoO3 graded ITO anodes with a sheet resistance of 12.67 Ω/square, a resistivity of 2.54 × 10-4 Ω cm, and an optical transmittance of 86.78%, all of which were comparable to a conventional ITO anode. In addition, the MoO3 graded ITO electrode showed a greater work function of 4.92 eV than that (4.6 eV) of an ITO anode, which is beneficial for hole extraction from an organic active layer. Due to the high work function of MoO3 graded ITO electrodes, the acidic PEDOT:PSS-free OSCs fabricated on the MoO3 graded ITO electrode exhibited a power conversion efficiency 3.60% greater than that of a PEDOT:PSS-free OSC on the conventional ITO anode. The successful operation of PEDOT:PSS-free OSCs indicates simpler fabrication steps for cost-effective OSCs and elimination of interfacial reactions caused by the acidic PEDOT:PSS layer for reliable OSCs.

  2. Semi-insulating Sn-Zr-O: Tunable resistance buffer layers

    SciTech Connect

    Barnes, Teresa M.; Burst, James M.; Reese, Matthew O.; Perkins, Craig L.

    2015-03-02

    Highly resistive and transparent (HRT) buffer layers are critical components of solar cells and other opto-electronic devices. HRT layers are often undoped transparent conducting oxides. However, these oxides can be too conductive to form an optimal HRT. Here, we present a method to produce HRT layers with tunable electrical resistivity, despite the presence of high concentrations of unintentionally or intentionally added dopants in the film. This method relies on alloying wide-bandgap, high-k dielectric materials (e.g., ZrO{sub 2}) into the host oxide to tune the resistivity. We demonstrate Sn{sub x}Zr{sub 1−x}O{sub 2}:F films with tunable resistivities varying from 0.001 to 10 Ω cm, which are controlled by the Zr mole fraction in the films. Increasing Zr suppresses carriers by expanding the bandgap almost entirely by shifting the valence-band position, which allows the HRT layers to maintain good conduction-band alignment for a low-resistance front contact.

  3. Improved performance of organic light-emitting devices with plasma treated ITO surface and plasma polymerized methyl methacrylate buffer layer

    NASA Astrophysics Data System (ADS)

    Lim, Jae-Sung; Shin, Paik-Kyun

    2007-02-01

    Transparent indium-tin-oxide (ITO) anode surface was modified using O 3 plasma and organic ultra-thin buffer layers were deposited on the ITO surface using 13.56 MHz rf plasma polymerization technique. A plasma polymerized methyl methacrylate (ppMMA) ultra-thin buffer layer was deposited between the ITO anode and hole transporting layer (HTL). The plasma polymerization of the buffer layer was carried out at a homemade capacitively coupled plasma (CCP) equipment. N, N'-Diphenyl- N, N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as HTL, Tris(8-hydroxy-quinolinato)aluminum (Alq 3) as both emitting layer (EML)/electron transporting layer (ETL), and aluminum layer as cathode were deposited using thermal evaporation technique. Electroluminescence (EL) efficiency, operating voltage and stability of the organic light-emitting devices (OLEDs) were investigated in order to study the effect of the plasma surface treatment of the ITO anode and role of plasma polymerized methyl methacrylate as an organic ultra-thin buffer layer.

  4. Growth and characterization of metamorphic InxGa1-xAs/InAlAs (x >= 0.8) modulation doped heterostructures on GaAs using a linearly graded In(AlGa)as buffer layer

    NASA Astrophysics Data System (ADS)

    Wang, S. M.; Karlsson, C.; Rorsman, N.; Bergh, M.; Olsson, E.; Andersson, T. G.

    1997-01-01

    Metamorphic InxGa1-xAs/InAlAs (x >= 0.8) modulation doped heterostructures have been grown on GaAs using a linearly graded In(AlGa)As buffer layer, and their structural and electric properties have been investigated. Surface morphology was found to depend on growth temperature and graded buffer thickness. Low growth temperature resulted in a relatively smooth surface with a minimum root-mean-square roughness value of 4-7 nm. The In(AlGa)As graded buffer effectively prevented dislocations from threading into the top layers. The epilayer grown on the graded buffer was tilted and not fully relaxed. High electron mobility and sheet density were achieved. The highest mobility value was 13740 cm2/Vs with a carrier density of 1.9 · 1012 cm-2 at 300 K. These values are comparable with InP-based InGaAs/InAlAs modulation doped heterostructures.

  5. Determination of layer-thickness variation in periodic multilayer by x-ray reflectivity

    SciTech Connect

    Jiang Hui; Zhu Jingtao; Xu Jing; Wang Xiaoqiang; Wang Zhanshan; Watanabe, Makoto

    2010-05-15

    A method basically determining individual layer thicknesses in actual periodic multilayers has been developed, that solves simultaneous equations of positions of peaks appearing in wavelet transform curve of x-ray grazing incidence reflectivity. The determination was demonstrated on a Ni/C periodic multilayer fabricated by magnetron sputtering. Using the layer thicknesses obtained by the method, further accurate of thickness, roughness, and density of each layer was performed by Parratt's model. The special feature that the topmost and bottom-most layers were thicker than other layers was clearly observed. The former is attributed to oxidation and the latter is attributed to the effect of deposition on thick substrate. The mean fluctuations of other layers are 2.6% in C layers and 4.2% in Ni layers attributed to random fluctuations at deposition. Numerical analysis and statistical hypothesis tests have been carried out to discuss noncumulative and cumulative layer-thickness fluctuations in fabrication process.

  6. Oxygen inhibition layer of composite resins: effects of layer thickness and surface layer treatment on the interlayer bond strength.

    PubMed

    Bijelic-Donova, Jasmina; Garoushi, Sufyan; Lassila, Lippo V J; Vallittu, Pekka K

    2015-02-01

    An oxygen inhibition layer develops on surfaces exposed to air during polymerization of particulate filling composite. This study assessed the thickness of the oxygen inhibition layer of short-fiber-reinforced composite in comparison with conventional particulate filling composites. The effect of an oxygen inhibition layer on the shear bond strength of incrementally placed particulate filling composite layers was also evaluated. Four different restorative composites were selected: everX Posterior (a short-fiber-reinforced composite), Z250, SupremeXT, and Silorane. All composites were evaluated regarding the thickness of the oxygen inhibition layer and for shear bond strength. An equal amount of each composite was polymerized in air between two glass plates and the thickness of the oxygen inhibition layer was measured using a stereomicroscope. Cylindrical-shaped specimens were prepared for measurement of shear bond strength by placing incrementally two layers of the same composite material. Before applying the second composite layer, the first increment's bonding site was treated as follows: grinding with 1,000-grit silicon-carbide (SiC) abrasive paper, or treatment with ethanol or with water-spray. The inhibition depth was lowest (11.6 μm) for water-sprayed Silorane and greatest (22.9 μm) for the water-sprayed short-fiber-reinforced composite. The shear bond strength ranged from 5.8 MPa (ground Silorane) to 36.4 MPa (water-sprayed SupremeXT). The presence of an oxygen inhibition layer enhanced the interlayer shear bond strength of all investigated materials, but its absence resulted in cohesive and mixed failures only with the short-fiber-reinforced composite. Thus, more durable adhesion with short-fiber-reinforced composite is expected. PMID:25556290

  7. Improvement of Performance and Stability of Polymer Photovoltaic Cells by WO3/CUPC as Anode Buffer Layers

    NASA Astrophysics Data System (ADS)

    Varnamkhasti, M. G.; Shahriaria, E.

    2015-05-01

    In this work, bulk-hetrojunction polymer photovoltaic cells based on poly-(3-hexylthiophene) (P3HT): [6,6]-phenyl C61 butyric acid methyl ester (PCBM) were fabricated with tungsten oxide (WO3) and copper phthalocyanine (CuPc) as anodic buffer layers. The WO3 plays an important role in reducing the interfacial resistance, efficiently extracting holes and good band structure matching between the work function of the anode and the highest occupied molecular orbital of the organic material. The insertion of CuPc improves the device In this work, bulk-hetrojunction polymer photovoltaic cells based on poly-(3-hexylthiophene) (P3HT): [6, 6]-phenyl C61 butyric acid methylester (PCBM) were fabricated with tungsten oxide (WO3) and copper phthalocyanine (CuPc) as anodic buffer layers. The WO3 plays animportant role in reducing the interfacial resistance, efficiently extracting holes and good band structure matching between the workfunction of the anode and the highest occupied molecular orbital of the organic material. The insertion of CuPc improves the device performance and expands the absorption spectra range of the photovoltaic devices. The effects of WO3 and CuPc thickness on the performance of the photovoltaic devices were investigated. The optimum thicknesses of WO3 and CuPc were 10 nm and 8 nm, respectively. The obtained power conversion efficiency of optimized cell was about 4.21%. Also, the device performance was analyzed based on thesurface roughness of bare ITO and ITO that was covered with poly (3, 4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT:PSS) or WO3/CuPc. The device stability in an ambient atmosphere without encapsulation under continuous light irradiation was also investigated.For the cell with PEDOT:PSS, the power conversion efficiency reduced down to 50% of the maximum value (half-life) after light irradiation for 12 h, while the half-life of device for WO3/CuPc was about 120 h. Therefore, the lifetime of unpackaged devices was improved with

  8. A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency.

    PubMed

    Tao, Jiahua; Zhang, Kezhi; Zhang, Chuanjun; Chen, Leilei; Cao, Huiyi; Liu, Junfeng; Jiang, Jinchun; Sun, Lin; Yang, Pingxiong; Chu, Junhao

    2015-06-28

    Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%. PMID:26027699

  9. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    SciTech Connect

    Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

    2014-09-15

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

  10. Enhancing electrochemical performance by control of transport properties in buffer layers--solid oxide fuel/electrolyser cells.

    PubMed

    Ramasamy, Devaraj; Nasani, Narendar; Brandão, Ana D; Pérez Coll, Domingo; Fagg, Duncan P

    2015-05-01

    The current work demonstrates how tailoring the transport properties of thin ceria-based buffer layers in solid oxide fuel or electrolyser cells can provide the necessary phase stability against chemical interaction at the electrolyte/electrode interface, while also providing radical improvements in the electrochemical performance of the oxygen electrode. Half cells of Ce0.8R0.2O2-δ + 2 mol% Co buffer layers (where R = Gd, Pr) with Nd2NiO4+δ electrodes were fabricated by spin coating on dense YSZ electrolyte supports. Dramatic decreases in polarization resistance, Rp, of up to an order of magnitude, could be achieved in the order, Pr ≪ Gd < no buffer layer. The current article shows how this improvement can be related to increased levels of ambipolar conductivity in the mixed conducting buffer layer, which provides an additional parallel path for electrochemical reaction. This is an important breakthrough as it shows how electrode polarization resistance can be substantially improved, in otherwise identical electrochemical cells, solely by tailoring the transport properties of thin intermediate buffer layers. PMID:25857870

  11. Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

    NASA Astrophysics Data System (ADS)

    Linder, K. K.; Zhang, F. C.; Rieh, J.-S.; Bhattacharya, P.; Houghton, D.

    1997-06-01

    The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ˜104cm-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.

  12. Towards NOAA Forecasts of Permafrost Active Layer Thickness

    NASA Astrophysics Data System (ADS)

    Livezey, M. M.; Jonassen, R. G.; Horsfall, F. M. C.; Jafarov, E. E.; Schaefer, K. M.

    2014-12-01

    NOAA's implementation of its 2014 Arctic Action Plan (AAP) lacks services related to permafrost change yet the Interagency Working Group on Coordination of Domestic Energy Development and Permitting in Alaska noted that warming permafrost challenges land-based development and calls for agencies to provide focused information needed by decision-makers. To address this we propose to link NOAA's existing seasonal forecasts of temperature and precipitation with a high-resolution model of the thermal state of permafrost (Jafarov et al., 2012) to provide near-term (one year ahead) forecasts of active layer thickness (ALT). Such forecasts would be an official NOAA statement of the expected thermal state of permafrost ALT in Alaska and would require: (1) long-term climate outlooks, (2) a permafrost model, (3) detailed specification of local spatial and vertical controls upon soil thermal state, (4) high-resolution vertical measurements of that thermal state, and (5) demonstration of forecast skill in pilot studies. Pilot efforts should focus on oil pipelines where the cost can be justified. With skillful forecasts, engineers could reduce costs of monitoring and repair as well as ecosystem damage by positioning equipment to more rapidly respond to predicted disruptions.

  13. Effects of Soil Property Uncertainty on Projected Active Layer Thickness

    NASA Astrophysics Data System (ADS)

    Harp, D. R.; Atchley, A. L.; Coon, E.; Painter, S. L.; Wilson, C. J.; Romanovsky, V. E.; Liljedahl, A.

    2014-12-01

    Uncertainty in future climate is often assumed to contribute the largest uncertainty to active layer thickness (ALT) projections. However, the impact of soil property uncertainty on these projections may be significant. In this research, we evaluate the contribution of soil property uncertainty on ALT projections at the Barrow Environmental Observatory, Alaska. The effect of variations in porosity, thermal conductivity, saturation, and water retention properties of peat and mineral soil are evaluated. The micro-topography of ice wedge polygons present at the site is included in the analysis using three 1D column models to represent polygon center, rim and trough features. The Arctic Terrestrial Simulator (ATS) is used to model multiphase thermal and hydrological processes in the subsurface. We apply the Null-Space Monte Carlo (NSMC) algorithm to identify an ensemble of soil property combinations that produce simulated temperature profiles that are consistent with temperature measurements available from the site. ALT is simulated for the ensemble of soil property combinations for four climate scenarios. The uncertainty in ALT due to soil properties within and across climate scenarios is evaluated. This work was supported by LANL Laboratory Directed Research and Development Project LDRD201200068DR and by the The Next-Generation Ecosystem Experiments (NGEE Arctic) project. NGEE-Arctic is supported by the Office of Biological and Environmental Research in the DOE Office of Science.

  14. Composite Fermion Spin Polarization Energy with Finite Layer Thickness

    NASA Astrophysics Data System (ADS)

    Shayegan, Mansour; Liu, Yang; Hasdemir, Sukret; Pfeiffer, Loren; West, Ken; Baldwin, Kirk

    2014-03-01

    We study the spin polarization transitions of fractional quantum Hall (FQH) states in the filling range 1 < ν < 2 in symmetric quantum wells (QWs), as a function of density. Our results reveal a strong well-width dependence of the critical density nC and ratio between the Zeeman energy (EZ) normalized to the Coulomb energy (e2 / 4 πɛlB), above which a certain FQH state becomes spin polarized. For example, the ν = 7 / 5 FQH state becomes spin polarized at about 3 times higher density or 1.7 times larger EZ in the 31-nm-wide QW than in the 65-nm-wide QW. This well-width dependence of the spin polarization stems from by the finite electron layer thickness in these QWs and the resulting softening of the Coulomb interaction. We acknowledge support through the DOE BES (DE-FG02-00-ER45841) for measurements, and the Gordon and Betty Moore Foundation (Grant GBMF2719), Keck Foundation, and the NSF (DMR-0904117, DMR-1305691 and MRSEC DMR-0819860) for sample fabrication. Work at Arg.

  15. The role of buffer layer between TCO and p-layer in improving series resistance and carrier recombination of a-Si:H solar cells

    SciTech Connect

    Yoon, Kichan; Shin, Chonghoon; Lee, Youn-Jung; Kim, Youngkuk; Park, Hyeongsik; Baek, Seungsin; Yi, Junsin

    2012-10-15

    The properties of the window layer and transparent conducting oxide (TCO)/p interface in silicon based thin-film solar cells are important factors in determining the cell efficiency. As the potential barrier got larger at the interface, the transmission of photo-generated holes were impeded and the recombination of photo-generated electrons diffusing back toward the TCO interface were enhanced leading to a deterioration of the fill factor. In this paper different p-layers were studied. It was found that using p-type hydrogenated amorphous silicon oxide (a-SiO{sub x}:H) layer as the window layer along with a 5 nm buffer layer which reduced the barrier at the fluorine doped tin oxide (SnO{sub 2}:F) TCO/p-layer interface, improved the cell efficiency. a-SiO{sub x}:H was used as the buffer layer. With the buffer layer between TCO and p-type a-SiO{sub x}:H, the potential barrier dropped from 0.506 eV to 0.472 eV. This lowered barrier results in increased short circuit current density (J{sub sc}) and fill factor (FF). With the buffer layer, J{sub sc} increased from 11.9 mA/cm{sup 2} to 13.35 mA/cm{sup 2} and FF increased from 73.22% to 74.91%.

  16. Investigation of polycrystalline thin-film CuInSe{sub 2} solar cells based on ZnSe and ZnO buffer layers. Final report, February 16, 1992--November 15, 1995

    SciTech Connect

    Olsen, L C

    1996-06-01

    The major objective of this program was to determine the potential of ZnSe and ZnO buffer layers in solar cells based on CuInSe{sub 2} and related alloys. Experimental studies were carried out with CIS and CIGSS substrates. ZnSe films were deposited by a CVD process which involved the reaction of a zinc adduct and H{sub 2}Se. Al/ZnSe/CIS test cells were used for process development. Test cell performance aided in determining the optimum thickness for ZnSe buffer layers to be in the range of 150 {angstrom} to 200 {angstrom} for Siemens CIS material, and between 80 {angstrom} and 120 {angstrom} for the graded absorber material. If the buffer layers exceeded these values significantly, the short-circuit current would be reduced to zero. The best efficiency achieved for a ZnSe/CIS cell was an active area value of 9.2%. In general, deposition of a conductive ZnO film on top of a ZnSe/CIS structure resulted in either shunted or inflected I-V characteristics. Two approaches were investigated for depositing ZnO buffer layers, namely, chemical bath deposition and CVD. CVD ZnO buffer layers are grown by reacting a zinc adduct with tetrahydrofuran. Best results were obtained for ZnO buffer layers grown with a substrate temperature ca. 225--250 C. These studies concentrated on Siemens graded absorber material (CIGSS). ZnO/CIS solar cells have been fabricated by first depositing a ZnO buffer layer, followed by deposition of a low resistivity ZnO top contact layer and an Al/Ag collector grid. Several cells were fabricated with an area of 0.44 cm{sup 2} that have total area efficiencies greater than 11%. To date, the best performing ZnO/CIS cell had a total area efficiency of 11.3%. In general, the authors find that ZnO buffer layers should have a resistivity > 1,000 ohm-cm and have a thickness from 200 {angstrom} to 600 {angstrom}. CIS cells studies with ZnO buffer layers grown by CBD also show promise. Finally, simulation studies were carried out using the 1-D code, PC-1D.

  17. Direct electron injection into an oxide insulator using a cathode buffer layer.

    PubMed

    Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

    2015-01-01

    Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current-voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼10(7), and protects the ZnO thin-film transistors from high electrical stresses. PMID:25864642

  18. Direct electron injection into an oxide insulator using a cathode buffer layer

    PubMed Central

    Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

    2015-01-01

    Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current–voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼107, and protects the ZnO thin-film transistors from high electrical stresses. PMID:25864642

  19. Power Conversion Efficiency and Device Stability Improvement of Inverted Perovskite Solar Cells by Using a ZnO:PFN Composite Cathode Buffer Layer.

    PubMed

    Jia, Xiaorui; Zhang, Lianping; Luo, Qun; Lu, Hui; Li, Xueyuan; Xie, Zhongzhi; Yang, Yongzhen; Li, Yan-Qing; Liu, Xuguang; Ma, Chang-Qi

    2016-07-20

    We have demonstrated in this article that both power conversion efficiency (PCE) and performance stability of inverted planar heterojunction perovskite solar cells can be improved by using a ZnO:PFN nanocomposite (PFN: poly[(9,9-bis(3'-(N,N-dimethylamion)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)-fluorene]) as the cathode buffer layer (CBL). This nanocomposite could form a compact and defect-less CBL film on the perovskite/PC61BM surface (PC61BM: phenyl-C61-butyric acid methyl ester). In addition, the high conductivity of the nanocomposite layer makes it works well at a layer thickness of 150 nm. Both advantages of the composite layer are helpful in reducing interface charge recombination and improving device performance. The power conversion efficiency (PCE) of the best ZnO:PFN CBL based device was measured to be 12.76%, which is higher than that of device without CBL (9.00%), or device with ZnO (7.93%) or PFN (11.30%) as the cathode buffer layer. In addition, the long-term stability is improved by using ZnO:PFN composite cathode buffer layer when compare to that of the reference cells. Almost no degradation of open circuit voltage (VOC) and fill factor (FF) was found for the device having ZnO:PFN, suggesting that ZnO:PFN is able to stabilize the interface property and consequently improve the solar cell performance stability. PMID:27349330

  20. Improvement of electron mobility in La:BaSnO3 thin films by insertion of an atomically flat insulating (Sr,Ba)SnO3 buffer layer

    NASA Astrophysics Data System (ADS)

    Shiogai, Junichi; Nishihara, Kazuki; Sato, Kazuhisa; Tsukazaki, Atsushi

    2016-06-01

    One perovskite oxide, ASnO3 (A = Sr, Ba), is a candidate for use as a transparent conductive oxide with high electron mobility in single crystalline form. However, the electron mobility of films grown on SrTiO3 substrates does not reach the bulk value, probably because of dislocation scattering that originates from the large lattice mismatch. This study investigates the effect of insertion of bilayer BaSnO3 / (Sr,Ba)SnO3 for buffering this large lattice mismatch between La:BaSnO3 and SrTiO3 substrate. The insertion of 200-nm-thick BaSnO3 on (Sr,Ba)SnO3 bilayer buffer structures reduces the number of dislocations and improves surface smoothness of the films after annealing as proved respectively by scanning transmission electron microscopy and atomic force microscopy. A systematic investigation of BaSnO3 buffer layer thickness dependence on Hall mobility of the electron transport in La:BaSnO3 shows that the highest obtained value of mobility is 78 cm2V-1s-1 because of its fewer dislocations. High electron mobility films based on perovskite BaSnO3 can provide a good platform for transparent-conducting-oxide electronic devices and for creation of fascinating perovskite heterostructures.

  1. Growth of III-V nitrides and buffer layer investigation by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Huang, Tzu-Fang

    1999-11-01

    III-V nitrides have been investigated intensively due to the enormous interest in optoelectronic device applications in the green, blue, violet, and near-ultraviolet regions. Advances in III-V nitride materials for short wavelength light sources will lead to both a revolution in optical disk storage, as higher densities can be achieved with short wavelengths, and a major impact on imaging and graphic technology as high quality red, green, and blue light-emitting diodes (LED) and lasers become available. High quality GaN films have mostly been prepared by metal-organic vapor phase epitaxy (MOCVD), molecular beam epitaxy (MBE) and vapor phase epitaxy (VPE). Compared to these techniques, pulsed laser deposition (PLD) is a relatively new growth technique used widely for the growth of oxide thin films. However, several advantages of PLD make it worthy of study as a method of growing nitrides. The congruent ablation achieved with short UV-laser pulses allows deposition of a multicomponent material by employing a single target and the ability for depositing a wide variety of materials. This advantage makes PLD very suitable for growing multilayer structures sequentially in the same chamber and investigating the effect of buffer layers. Moreover, the strong nonequilibrium growth conditions of PLD may lead to different nucleation and growth processes. In this work, GaN and (Al,Ga)N films have been epitaxially grown on (0001) sapphire substrate by PLD, which has been successfully applied to controlling the lattice constant and band gap of (Al,Ga)N. Room-temperature photoluminescence of PLD-GaN exhibits a strong band edge emission at 3.4eV. The threading dislocations of GaN are predominantly screw dislocations with Burgers vector of <0001> while edge dislocations with Burgers vector of 1/3<11-20> are the dominant ones in GaN grown by MBE, MOCVD and VPE. This variation observed in defect characteristics may come from the difference in nucleation and growth kinetics between PLD

  2. Epitaxial CeO2 buffer layers for YBa2Cu3O(7-delta) films on sapphire

    NASA Astrophysics Data System (ADS)

    Maul, M.; Schulte, B.; Haeussler, P.; Frank, G.; Steinborn, T.; Fuess, H.; Adrian, H.

    1993-08-01

    The paper reports the successful in situ preparation of thin epitaxial CeO2 buffer layers and YBa2Cu3O(7-delta) (YBCO) films on (1 -1 0 2) Al2O3 substrates by electron beam coevaporation, using an evaporation system (Leybold L560) with four sources. Electron beam sources were used for Y, Ba, and Ce, while Cu was evaporated from a resistively heated tungsten boat. The buffer layers show very smooth surfaces and structural properties close to those of a single crystal. High quality YBCO films grown on these buffer layers have Tc not 88 K or above and j(c) values of 10 exp 6 A/sq cm or greater.

  3. Thickness of the Meniscal Lamellar Layer: Correlation with Indentation Stiffness and Comparison of Normal and Abnormally Thick Layers by Using Multiparametric Ultrashort Echo Time MR Imaging.

    PubMed

    Choi, Ja-Young; Biswas, Reni; Bae, Won C; Healey, Robert; Im, Michael; Statum, Sheronda; Chang, Eric Y; Du, Jiang; Bydder, Graeme M; D'Lima, Darryl; Chung, Christine B

    2016-07-01

    Purpose To determine the relationship between lamellar layer thickness on ultrashort echo time (UTE) magnetic resonance (MR) images and indentation stiffness of human menisci and to compare quantitative MR imaging values between two groups with normal and abnormally thick lamellar layers. Materials and Methods This was a HIPAA-compliant, institutional review board-approved study. Nine meniscal pieces were obtained from seven donors without gross meniscal pathologic results (mean age, 57.4 years ± 14.5 [standard deviation]). UTE MR imaging and T2, UTE T2*, and UTE T1ρ mapping were performed. The presence of abnormal lamellar layer thickening was determined and thicknesses were measured. Indentation testing was performed. Correlation between the thickness and indentation stiffness was assessed, and mean quantitative MR imaging values were compared between the groups. Results Thirteen normal lamellar layers had mean thickness of 232 μm ± 85 and indentation peak force of 1.37 g ± 0.87. Four abnormally thick lamellar layers showed mean thickness of 353.14 μm ± 98.36 and peak force 0.72 g ± 0.31. In most cases, normal thicknesses showed highly positive correlation with the indentation peak force (r = 0.493-0.912; P < .001 to .05). However, the thickness in two abnormal lamellar layers showed highly negative correlation (r = -0.90, P < .001; and r = -0.23, P = .042) and no significant correlation in the others. T2, UTE T2*, and UTE T1ρ values in abnormally thick lamellar layers were increased compared with values in normal lamellar layers, although only the UTE T2* value showed significant difference (P = .010). Conclusion Variation of lamellar layer thickness in normal human menisci was evident on two-dimensional UTE images. In normal lamellar layers, thickness is highly and positively correlated with surface indentation stiffness. UTE T2* values may be used to differentiate between normal and abnormally thickened lamellar layers. (©) RSNA, 2016. PMID:26829523

  4. Obtaining Thickness Maps of Corneal Layers Using the Optimal Algorithm for Intracorneal Layer Segmentation

    PubMed Central

    Rabbani, Hossein; Kazemian Jahromi, Mahdi; Jorjandi, Sahar; Mehri Dehnavi, Alireza; Hajizadeh, Fedra; Peyman, Alireza

    2016-01-01

    Optical Coherence Tomography (OCT) is one of the most informative methodologies in ophthalmology and provides cross sectional images from anterior and posterior segments of the eye. Corneal diseases can be diagnosed by these images and corneal thickness maps can also assist in the treatment and diagnosis. The need for automatic segmentation of cross sectional images is inevitable since manual segmentation is time consuming and imprecise. In this paper, segmentation methods such as Gaussian Mixture Model (GMM), Graph Cut, and Level Set are used for automatic segmentation of three clinically important corneal layer boundaries on OCT images. Using the segmentation of the boundaries in three-dimensional corneal data, we obtained thickness maps of the layers which are created by these borders. Mean and standard deviation of the thickness values for normal subjects in epithelial, stromal, and whole cornea are calculated in central, superior, inferior, nasal, and temporal zones (centered on the center of pupil). To evaluate our approach, the automatic boundary results are compared with the boundaries segmented manually by two corneal specialists. The quantitative results show that GMM method segments the desired boundaries with the best accuracy. PMID:27247559

  5. Effects of BaBi2Ta2O9 thin buffer layer on crystallization and electrical properties of CaBi2Ta2O9 thin films on Pt-coated silicon

    NASA Astrophysics Data System (ADS)

    Kato, Kazumi; Suzuki, Kazuyuki; Nishizawa, Kaori; Miki, Takeshi

    2001-05-01

    Non-c-axis oriented CaBi2Ta2O9 (CBT) thin films have been successfully deposited via the triple alkoxide solution method on Pt-coated Si substrates by inserting BaBi2Ta2O9 (BBT) thin buffer layers. The BBT thin buffer layer, which was prepared on Pt-coated Si, was a key material for suppression of the nonpolar c-axis orientation and promoting the ferroelectric structure perpendicular to the in-plane direction of CBT thin film. The annealing temperature and thickness of the BBT thin buffer layers affected the dielectric, ferroelectric, and fatigue properties of the stacked CBT/BBT thin films. The resultant 650 °C annealed CBT/BBT(30 nm) thin film exhibited good P-E hysteresis properties and fatigue behaviors.

  6. Effects of buffer layer and thermal annealing on the performance of hybrid Cu2S/PVK electrically bistable devices

    NASA Astrophysics Data System (ADS)

    Li, Xu; Lu, Yue; Guan, Li; Li, Jiantao; Wang, Yichao; Dong, Guoyi; Tang, Aiwei; Teng, Feng

    2016-09-01

    Hybrid organic/inorganic electrically bistable devices (EBDs) based on Cu2S/PVK nanocomposites have been fabricated by using a simple spin-coating method. An obvious electrical bistability is observed in the current-voltage (I-V) characteristics of the devices, and the presence of the buffer layer and the annealing process have an important effect on the enhancement of the ON/OFF current ratios. Different electrical conduction mechanisms are responsible for the charge switching of the devices in the presence and absence of the buffer layer.

  7. Improved performance of polymer solar cells by using inorganic, organic, and doped cathode buffer layers

    NASA Astrophysics Data System (ADS)

    Taohong, Wang; Changbo, Chen; Kunping, Guo; Guo, Chen; Tao, Xu; Bin, Wei

    2016-03-01

    The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester (P3HT:PCBM) polymer solar cell, we studied the effect of the cathode buffer layer (CBL) between the top metal electrode and the active layer on the device performance. Several inorganic and organic materials commonly used as the electron injection layer in an organic light-emitting diode (OLED) were employed as the CBL in the P3HT:PCBM polymer solar cells. Our results demonstrate that the inorganic and organic materials like Cs2CO3, bathophenanthroline (Bphen), and 8-hydroxyquinolatolithium (Liq) can be used as CBL to efficiently improve the device performance of the P3HT:PCBM polymer solar cells. The P3HT:PCBM devices employed various CBLs possess power conversion efficiencies (PCEs) of 3.0%-3.3%, which are ca. 50% improved compared to that of the device without CBL. Furthermore, by using the doped organic materials Bphen:Cs2CO3 and Bphen:Liq as the CBL, the PCE of the P3HT:PCBM device will be further improved to 3.5%, which is ca. 70% higher than that of the device without a CBL and ca. 10% increased compared with that of the devices with a neat inorganic or organic CBL. Project supported by the National Natural Science Foundation of China (Grant No. 61204014), the “Chenguang” Project (13CG42) supported by Shanghai Municipal Education Commission and Shanghai Education Development Foundation, China, and the Shanghai University Young Teacher Training Program of Shanghai Municipality, China.

  8. Layer-by-layer Assembly of Thick, Cu2+-Chelating Films

    PubMed Central

    Wijeratne, Salinda; Bruening, Merlin L.; Baker, Gregory L.

    2013-01-01

    Layer-by-layer adsorption of protonated poly(allylamine) (PAH) and deprotonated poly(N,N-dicarboxymethylallyl amine) (PDCMAA) yields thick films with a high density of iminodiacetic acid (IDA) ligands that bind metal ions. When film deposition occurs at pH 3.0, PAH/PDCMAA bilayer thicknesses reach 200 nm, and Cu2+ binding capacities are ~2.5 mmoles per cm3 of film. (PAH/PDCMAA)10 films deposited at pH 3.0 are 4- to 8-fold thicker than films formed at pH 5.0, 7.0, or 9.0, presumably because of the low charge density on PDCMAA chains at pH 3.0. However, with normalization to film thickness, all films bind similar amounts of Cu2+ from pH 4.1 solutions of CuSO4. In μm-thick films, equilibration of binding sites with Cu2+ requires ~4 h due to a low Cu2+ diffusion coefficient (~2.6×10−12 cm2/sec). Sorption isotherms determined at several temperatures show that Cu2+ binding is endothermic with a positive entropy (binding constants increase with increasing temperature), presumably because metal-ion complexation involves displacement of both a proton from IDA and water molecules from Cu2+. (PAH/PDCMAA)10 films retain their binding capacity over 4 absorption/elution cycles and may prove useful in metal-ion scavenging, catalysis, and protein binding. PMID:24044576

  9. Inversion of thicknesses of multi-layered structures from eddy current testing measurements.

    PubMed

    Huang, Ping-jie; Wu, Zhao-tong

    2004-01-01

    Luquire et al.'s impedance change model of a rectangular cross section probe coil above a structure with an arbitrary number of parallel layers was used to study the principle of measuring thicknesses of multi-layered structures in terms of eddy current testing voltage measurements. An experimental system for multi-layered thickness measurement was developed and several fitting models to formulate the relationships between detected impedance/voltage measurements and thickness are put forward using least square method. The determination of multi-layered thicknesses was investigated after inversing the voltage outputs of the detecting system. The best fitting and inversion models are presented. PMID:14663858

  10. Evaluation of methods for application of epitaxial buffer and superconductor layers

    SciTech Connect

    1999-03-30

    The recent achievements of critical currents exceeding million amperes per square centimeter at 77K in YBCO deposited over suitably textured substrate have stimulated interest in the potential applications of coated conductors at high temperatures and in high magnetic fields. Currently, ion-beam assisted deposition (IBAD), and rolling assisted bi-axially textured substrate (RABiTS), represent two available options for obtaining textured substrates. For applying suitable coatings of buffer and high temperature superconductor (HTS) material over textured substrates, several options are available which include sputtering, electron-beam evaporation, laser ablation, electrophoresis, chemical vapor deposition (including metal organics chemical vapor deposition), sol-gel, metal organics decomposition, electrodeposition and aerosol/spray pyrolysis. A commercial continuous long-length wire/tape manufacturing scheme developed out of any suitable combination of the above techniques would consist of operations involving preparation of the substrate and application of buffer, HTS and passivation/insulation materials and special treatment steps such as post-annealing. These operations can be effected by various process parameters that can be classified into chemistry, materials, engineering and environmental related parameters. Under the DOE-sponsored program, to carry out an engineering evaluation, first, the process flow schemes were developed for various candidate options identifying the major operating steps, process conditions, and process streams. Next, to evaluate quantifiable parameters such as process severity (e.g. temperature and pressure), coating thickness and deposition rate for HTS material, achieved maximum J{sub c} value (for films >1{micro}m thick) and cost of chemical and material utilization efficiency, the multi-attribute method was used to determine attributes/merits for various parameters and candidate options. To determine similar attribute values for the

  11. Control of metamorphic buffer structure and device performance of InxGa1-xAs epitaxial layers fabricated by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Nguyen, H. Q.; Yu, H. W.; Luc, Q. H.; Tang, Y. Z.; Phan, V. T. H.; Hsu, C. H.; Chang, E. Y.; Tseng, Y. C.

    2014-12-01

    Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique’s precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (˜106 cm-2), while keeping each individual SG layer slightly exceeding the critical thickness (˜80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 1012 eV-1 cm-2 in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

  12. Effect of Ag doping and insulator buffer layer on the memory mechanism of polymer nanocomposites

    NASA Astrophysics Data System (ADS)

    Kaur, Ramneek; Kaur, Jagdish; Tripathi, S. K.

    2015-07-01

    Resistive memory devices based on nanocomposites have attracted great potential for future applications in electronic and optoelectronic devices. The successful synthesis of aqueous CdSe nanoparticles has been provided with UV-Vis and Photoluminescence spectroscopy. The two terminal planar devices of CdSe nanocomposite have been fabricated. The effect of Ag doping and additional dielectric buffer layers on the memory devices have been studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The devices show hysteresis loops in both positive and negative bias directions. The memory window has been found to be increased with both Ag doping and PVA layer addition. The charge carrier transport mechanism in the memory devices has been studied by fitting the I-V characteristics with the theoretical model, Space charge conduction model (SCLC). C-V hysteresis loop in both positive and negative bias directions indicate that both the electrons and holes are responsible for memory mechanism of the devices. The switching mechanism of the memory devices has been explained by charge trapping/detrapping model. The retention characteristics show good stability and reliability of the devices.

  13. Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices

    NASA Astrophysics Data System (ADS)

    Gamarra, Piero; Lacam, Cedric; Tordjman, Maurice; Splettstösser, Jörg; Schauwecker, Bernd; di Forte-Poisson, Marie-Antoinette

    2015-03-01

    This work reports on the optimisation of carbon doping GaN buffer layer (BL) for AlGaN/GaN HEMT (high electron mobility transistor) structures, grown by low pressure metal-organic vapour phase epitaxy (LP-MOVPE) on 3 in. SiC semi-insulating substrates. The incorporation of carbon impurities in GaN is studied as a function of the growth conditions, without using an external carbon source. We observed that the C incorporation can be effectively controlled over more than one order of magnitude by tuning the reactor pressure and the growth temperature, without degradation of the crystalline properties of the GaN layers. HEMT structures with a specific barrier design were grown with different carbon dopings in the GaN BL and processed into transistors to evaluate the impact of the BL doping on the device performances. A significant improvement of the HEMT drain leakage current and of the breakdown voltage was obtained by increasing the carbon incorporation in the GaN BL. The RF performances of the devices show a trade-off between leakage currents and trapping phenomena which are enhanced by the use of carbon doping, limiting the delivered output power. An output power as high as 6.5 W/mm with a Power Added Efficiency of 70% has been achieved at 2 GHz by the HEMT structures with the lowest carbon doping in the BL.

  14. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    NASA Astrophysics Data System (ADS)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  15. Assembly and organization of poly(3-hexylthiophene) brushes and their potential use as novel anode buffer layers for organic photovoltaics.

    PubMed

    Alonzo, José; Kochemba, W Michael; Pickel, Deanna L; Ramanathan, Muruganathan; Sun, Zhenzhong; Li, Dawen; Chen, Jihua; Sumpter, Bobby G; Heller, William T; Kilbey, S Michael

    2013-10-01

    Buffer layers that control electrochemical reactions and physical interactions at electrode/film interfaces are key components of an organic photovoltaic cell. Here the structure and properties of layers of semi-rigid poly(3-hexylthiophene) (P3HT) chains tethered at a surface are investigated, and these functional systems are applied in an organic photovoltaic device. Areal density of P3HT chains is readily tuned through the choice of polymer molecular weight and annealing conditions, and insights from optical absorption spectroscopy and semiempirical quantum calculation methods suggest that tethering causes intrachain defects that affect co-facial π-stacking of brush chains. Because of their ability to modify oxide surfaces, P3HT brushes are utilized as an anode buffer layer in a P3HT-PCBM (phenyl-C₆₁-butyric acid methyl ester) bulk heterojunction device. Current-voltage characterization shows a significant enhancement in short circuit current, suggesting the potential of these novel nanostructured buffer layers to replace the PEDOT:PSS buffer layer typically applied in traditional P3HT-PCBM solar cells. PMID:23955069

  16. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    SciTech Connect

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U.; Bergsten, J.; Rorsman, N.

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  17. Retinal nerve fiber layer thickness and retinal vessel calibers in children with thalassemia minor

    PubMed Central

    Acer, Semra; Balcı, Yasemin I; Pekel, Gökhan; Ongun, Tuğba T; Polat, Aziz; Çetin, Ebru N; Yağcı, Ramazan

    2016-01-01

    Objectives: Evaluation of the peripapillary retinal nerve fiber layer thickness, subfoveal choroidal thickness, and retinal vessel caliber measurements in children with thalassemia minor. Methods: In this cross-sectional and comparative study, 30 thalassemia minor patients and 36 controls were included. Heidelberg spectral domain optical coherence tomography was used for peripapillary retinal nerve fiber layer thickness, subfoveal choroidal thickness, and retinal vessel caliber measurements. Results: There was no statistically significant difference in retinal nerve fiber layer thickness and subfoveal choroidal thickness between the two groups (p > 0.05). There was no correlation between retinal nerve fiber layer thickness and hemoglobin values. Both the arterioral and venular calibers were higher in thalassemia minor group (p < 0.05). Conclusion: There is increased retinal arterioral and venular calibers in children with thalassemia minor compared with controls. PMID:27540484

  18. Preparation of a thick polymer brush layer composed of poly(2-methacryloyloxyethyl phosphorylcholine) by surface-initiated atom transfer radical polymerization and analysis of protein adsorption resistance.

    PubMed

    Inoue, Yuuki; Onodera, Yuya; Ishihara, Kazuhiko

    2016-05-01

    The purpose of this study was to prepare a thick polymer brush layer composed of poly(2-methacryloyloxyethyl phosphorylcholine (MPC)) and assess its resistance to protein adsorption from the dissolved state of poly(MPC) chains in an aqueous condition. The thick poly(MPC) brush layer was prepared through the surface-initiated atom transfer radical polymerization (SI-ATRP) of MPC with a free initiator from an initiator-immobilized substrate at given [Monomer]/[Free initiator] ratios. The ellipsometric thickness of the poly(MPC) brush layers could be controlled by the polymerization degree of the poly(MPC) chains. The thickness of the poly(MPC) brush layer in an aqueous medium was larger than that in air, and this tendency became clearer when the polymerization degree of the poly(MPC) increased. The maximum thickness of the poly(MPC) brush layer in an aqueous medium was around 110nm. The static air contact angle of the poly(MPC) brush layer in water indicated a reasonably hydrophilic nature, which was independent of the thickness of the poly(MPC) brush layer at the surface. This result occurred because the hydrated state of the poly(MPC) chains is not influenced by the environment surrounding them. Finally, as measured with a quartz crystal microbalance, the amount of protein adsorbed from a fetal bovine serum solution (10% in phosphate-buffered saline) on the original substrate was 420ng/cm(2). However, the poly(MPC) brush layer reduced this value dramatically to less than 50ng/cm(2). This effect was independent of the thickness of the poly(MPC) brush layer for thicknesses between 20nm and about 110nm. These results indicated that the surface covered with a poly(MPC) brush layer is a promising platform to avoid biofouling and could also be applied to analyze the reactions of biological molecules with a high signal/noise ratio. PMID:26896657

  19. Thickness Mapping of Eleven Retinal Layers Segmented Using the Diffusion Maps Method in Normal Eyes

    PubMed Central

    Kafieh, Raheleh; Rabbani, Hossein; Abramoff, Michael D.; Sonka, Milan

    2015-01-01

    This study was conducted to determine the thickness map of eleven retinal layers in normal subjects by spectral domain optical coherence tomography (SD-OCT) and evaluate their association with sex and age. Mean regional retinal thickness of 11 retinal layers was obtained by automatic three-dimensional diffusion map based method in 112 normal eyes of 76 Iranian subjects. We applied our previously reported 3D intraretinal fast layer segmentation which does not require edge-based image information but rather relies on regional image texture. The thickness maps are compared among 9 macular sectors within 3 concentric circles as defined by ETDRS. The thickness map of central foveal area in layers 1, 3, and 4 displayed the minimum thickness. Maximum thickness was observed in nasal to the fovea of layer 1 and in a circular pattern in the parafoveal retinal area of layers 2, 3, and 4 and in central foveal area of layer 6. Temporal and inferior quadrants of the total retinal thickness and most of other quadrants of layer 1 were significantly greater in the men than in the women. Surrounding eight sectors of total retinal thickness and a limited number of sectors in layers 1 and 4 significantly correlated with age. PMID:25960888

  20. Cloud layer thicknesses from a combination of surface and upper-air observations

    NASA Technical Reports Server (NTRS)

    Poore, Kirk D.; Wang, Junhong; Rossow, William B.

    1995-01-01

    Cloud layer thicknesses are derived from base and top altitudes by combining 14 years (1975-1988) of surface and upper-air observations at 63 sites in the Northern Hemisphere. Rawinsonde observations are employed to determine the locations of cloud-layer top and base by testing for dewpoint temperature depressions below some threshold value. Surface observations serve as quality checks on the rawinsonde-determined cloud properties and provide cloud amount and cloud-type information. The dataset provides layer-cloud amount, cloud type, high, middle, or low height classes, cloud-top heights, base heights and layer thicknesses, covering a range of latitudes from 0 deg to 80 deg N. All data comes from land sites: 34 are located in continental interiors, 14 are near coasts, and 15 are on islands. The uncertainties in the derived cloud properties are discussed. For clouds classified by low-, mid-, and high-top altitudes, there are strong latitudinal and seasonal variations in the layer thickness only for high clouds. High-cloud layer thickness increases with latitude and exhibits different seasonal variations in different latitude zones: in summer, high-cloud layer thickness is a maximum in the Tropics but a minimum at high latitudes. For clouds classified into three types by base altitude or into six standard morphological types, latitudinal and seasonal variations in layer thickness are very small. The thickness of the clear surface layer decreases with latitude and reaches a summer minimum in the Tropics and summer maximum at higher latitudes over land, but does not vary much over the ocean. Tropical clouds occur in three base-altitude groups and the layer thickness of each group increases linearly with top altitude. Extratropical clouds exhibit two groups, one with layer thickness proportional to their cloud-top altitude and one with small (less than or equal to 1000 m) layer thickness independent of cloud-top altitude.

  1. Metaporous layer to overcome the thickness constraint for broadband sound absorption

    SciTech Connect

    Yang, Jieun; Lee, Joong Seok; Kim, Yoon Young

    2015-05-07

    The sound absorption of a porous layer is affected by its thickness, especially in a low-frequency range. If a hard-backed porous layer contains periodical arrangements of rigid partitions that are coordinated parallel and perpendicular to the direction of incoming sound waves, the lower bound of the effective sound absorption can be lowered much more and the overall absorption performance enhanced. The consequence of rigid partitioning in a porous layer is to make the first thickness resonance mode in the layer appear at much lower frequencies compared to that in the original homogeneous porous layer with the same thickness. Moreover, appropriate partitioning yields multiple thickness resonances with higher absorption peaks through impedance matching. The physics of the partitioned porous layer, or the metaporous layer, is theoretically investigated in this study.

  2. Effects of Membrane- and Catalyst-layer-thickness Nonuniformitiesin Polymer-electrolyte Fuel Cells

    SciTech Connect

    Weber, Adam Z.; Newman, John

    2006-09-01

    In this paper, results from mathematical, pseudo 2-D simulations are shown for four different along-the-channel thickness distributions of both the membrane and cathode catalyst layer. The results and subsequent analysis clearly demonstrate that for the membrane thickness distributions, cell performance is affected a few percent under low relative-humidity conditions and that the position along the gas channel is more important than the local thickness variations. However, for the catalyst-layer thickness distributions, global performance is not impacted, although for saturated conditions there is a large variability in the local temperature and performance depending on the thickness.

  3. Solution Processing of Cadmium Sulfide Buffer Layer and Aluminum-Doped Zinc Oxide Window Layer for Thin Films Solar Cells

    NASA Astrophysics Data System (ADS)

    Alam, Mahboob; Islam, Mohammad; Achour, Amine; Hayat, Ansar; Ahsan, Bilal; Rasheed, Haroon; Salam, Shahzad; Mujahid, Mohammad

    2014-07-01

    Cadmium sulfide (CdS) and aluminum-doped zinc oxide (Al:ZnO) thin films are used as buffer layer and front window layer, respectively, in thin film solar cells. CdS and Al:ZnO thin films were produced using chemical bath deposition (CBD) and sol-gel technique, respectively. For CBD CdS, the effect of bath composition and temperature, dipping time and annealing temperature on film properties was investigated. The CdS films are found to be polycrystalline with metastable cubic crystal structure, dense, crack-free surface morphology and the crystallite size of either few nanometers or 12-17 nm depending on bath composition. In case of CdS films produced with 1:2 ratio of Cd and S precursors, spectrophotometer studies indicate quantum confinement effect, owing to extremely small crystallite size, with an increase in Eg value from 2.42 eV (for bulk CdS) to 3.76 eV along with a shift in the absorption edge toward 330 nm wavelength. The optimum annealing temperature is 400°C beyond which film properties deteriorate through S evaporation and CdO formation. On the other hand, Al:ZnO films prepared via spin coating of precursor sols containing 0.90-1.10 at.% Al show that, with an increase in Al concentration, the average grain size increases from 28 nm to 131 nm with an associated decrease in root-mean-square roughness. The minimum value of electrical resistivity, measured for the films prepared using 0.95 at.% Al in the precursor sol, is 2.7 × 10-4 Ω ṡ cm. The electrical resistivity value rises upon further increase in Al doping level due to introduction of lattice defects and Al segregation to the grain boundary area, thus limiting electron transport through it.

  4. Cd-Zn-O-S alloys for optimal buffer layers in thin-film photovoltaics (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Varley, Joel B.; He, Xiaoqing; Mackie, Neil; Rockett, Angus A.; Lordi, Vincenzo

    2015-09-01

    Advances in thin-film photovoltaics have largely focused on modifying the absorber layer(s), while the choices for other layers in the solar cell stack have remained somewhat limited. In particular, cadmium sulfide (CdS) is widely used as the buffer layer in typical record devices utilizing absorbers like Cu(In,Ga)Se2 (CIGSe) or Cu2ZnSnS4 (CZTS) despite leading to a loss of solar photocurrent due to its band gap of 2.4 eV. While different buffers such as Zn(S,O,OH) are beginning to become competitive with CdS, the identification of additional wider-band gap alternatives with electrical properties comparable to or better than CdS is highly desirable. Here we use hybrid density functional calculations to characterize CdxZn1-xOyS1-y candidate buffer layers in the quaternary phase space composed by Cd, Zn, O, and S. We focus on the band gaps and band offsets of the alloys to assess strategies for improving absorption losses from conventional CdS buffers while maintaining similar conduction band offsets known to facilitate good device performance. We also consider additional criteria such as lattice matching to identify regions in the composition space that may provide improved epitaxy to CIGSe and CZTS absorbers. Lastly, we incorporate our calculated alloy properties into device model simulations of typical CIGSe devices to identify the CdxZn1-xOyS1-y buffer compositions that lead to the best performance. This work performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344 and funded by the Department of Energy office of Energy Efficiency and Renewable Energy (EERE) through the SunShot Bridging Research Interactions through collaborative Development Grants in Energy (BRIDGE) program.

  5. Characterization and optimization of residual layer thickness during UV imprint process for singlemode waveguide fabrication

    NASA Astrophysics Data System (ADS)

    An, Shinmo; Lee, Hyun-Shik; Park, Se-Guen; O, Beom-Hoan; Lee, Seung-Gol; Lee, El-Hang

    2009-02-01

    We report on the fabrication and characterization of a residual layer resulting from UV imprinting of singlemode optical waveguide. We have measured the residual thickness formed from the imprinting process for several-um-size singlemode waveguide fabrication using the parameters of the imprinting pressure, dropped volume, and viscosity of the used polymer. We found that the residual layer thickness is dependent on both the initial polymer volume and process pressure and the initial polymer volume is more critical than process pressure. Viscosity of polymer also affects the residual layer thickness, the lowest residual layer thickness of 29nm is achieved with nano-imprinting resin, 0.3uL volume, and imprint pressure more than 20bar. Even with optical resin, the residual layer thickness of 60nm is achieved with 0.3uL volume and imprinting pressure of 30bar.

  6. Enhancement in electrical properties of ITO/PEDOT:PSS/PTCDA/Ag by using calcium buffer layer

    NASA Astrophysics Data System (ADS)

    Tahir, Muhammad; Hassan Sayyad, Muhammad; Wahab, Fazal; Aziz, Fakhra; Ullah, Irfan; Khan, Gulzar

    2015-06-01

    This paper reports on electrical characterization of ITO/PEDOT:PSS/PTCDA/Ca/Ag device based on 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) and calcium (Ca) buffer layer with improved junction properties. The I-V characteristics have been utilized to extract various electrical parameters such as ideality factor (n), barrier height (ϕB) and series resistance Rs, which are found to be 1.9, 0.79 eV and 2.5 kΩ, respectively. The device shows good rectifying behavior, with a rectification ratio of 528, and also field-lowering mechanism with a linear dependence of log I on V1/2. The device reported in the present work shows 50% improvement in the rectification ratio and ideality factor as compared to our previously fabricated device. It appears from the experimental data that the transport mechanism in the PTCDA thin film is dominated by the Poole-Frenkel model of thermionic emission, which may be associated with high density of structural defects or traps present in the film.

  7. Rayleigh-Taylor growth and imprint reduction using foam buffer layers on the Omega Laser

    NASA Astrophysics Data System (ADS)

    Watt, R. G.; Duke, J. R.; Elliot, N. E.; Gobby, P. L.; Hollis, R. V.; Kopp, R. A.; Mason, R. J.; Pollak, G.; Wilson, D. C.; Willi, O.; Kalantar, D. H.; Boehly, T. R.; Knauer, J. P.; Meyerhofer, D. D.; Smalyuk, V. A.; Verdon, C. P.

    1997-11-01

    A serious concern for directly driven ICF implosions is the asymmetry imparted to the capsule by laser drive nonuniformities. A distributed phase plate (DPP) with speckle pattern averaged over several coherence times by smoothing with spectral dispersion (SSD) still retains an ``early time imprint''. A supersonically preheated foam, with Au preheat layer, may reduce this imprint, by creating a low density, high temperature thermal plasma between the absorption and ablation surfaces. We report on experiments using machined polystyrene (PS) foams at 30 mg/cc on the Omega laser at 351 nm. The Rayleigh-Taylor growth of intentional solid substrate mass modulations was measured. Similar observed growth with and without foam suggests at most minor isentrope changes in the solid due to the presence of the foam. Significant reduction in the imprint from the OMEGA beams with DPP and distributed polarization rotators (DPR) but without smoothing by spectral dispersion (SSD) is observed when a foam buffer is employed. Recent experimental results will be shown and compared to simulations.

  8. Improving the performance of perovskite solar cells with glycerol-doped PEDOT:PSS buffer layer

    NASA Astrophysics Data System (ADS)

    Jian-Feng, Li; Chuang, Zhao; Heng, Zhang; Jun-Feng, Tong; Peng, Zhang; Chun-Yan, Yang; Yang-Jun, Xia; Duo-Wang, Fan

    2016-02-01

    In this paper, we investigate the effects of glycerol doping on transmittance, conductivity and surface morphology of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate)) (PEDOT:PSS) and its influence on the performance of perovskite solar cells. . The conductivity of PEDOT:PSS is improved obviously by doping glycerol. The maximum of the conductivity is 0.89 S/cm when the doping concentration reaches 6 wt%, which increases about 127 times compared with undoped. The perovskite solar cells are fabricated with a configuration of indium tin oxide (ITO)/PEDOT:PSS/CH3NH3PbI3/PC61BM/Al, where PEDOT:PSS and PC61BM are used as hole and electron transport layers, respectively. The results show an improvement of hole charge transport as well as an increase of short-circuit current density and a reduction of series resistance, owing to the higher conductivity of the doped PEDOT:PSS. Consequently, it improves the whole performance of perovskite solar cell. The power conversion efficiency (PCE) of the device is improved from 8.57% to 11.03% under AM 1.5 G (100 mW/cm2 illumination) after the buffer layer has been modified. Project supported by the National Natural Science Foundation of China (Grant Nos. 61264002, 61166002, 91333206, and 51463011), the Natural Science Foundation of Gansu Province, China (Grant No. 1308RJZA159), the New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-13-0840), the Research Project of Graduate Teacher of Gansu Province, China (Grant No. 2014A-0042), and the Postdoctoral Science Foundation from Lanzhou Jiaotong University, China.

  9. The effect of chain rigidity on the interfacial layer thickness and dynamics of polymer nanocomposites

    NASA Astrophysics Data System (ADS)

    Cheng, Shiwang; Carrillo, Jan-Michael Y.; Carroll, Bobby; Sumpter, Bobby G.; Sokolov, Alexei P.

    There are growing experimental evidences showing the existence of an interfacial layer that has a finite thickness with slowing down dynamics in polymer nanocomposites (PNCs). Moreover, it is believed that the interfacial layer plays a significant role on various macroscopic properties of PNCs. A thicker interfacial layer is found to have more pronounced effect on the macroscopic properties such as the mechanical enhancement. However, it is not clear what molecular parameter controls the interfacial layer thickness. Inspired by our recent computer simulations that showed the chain rigidity correlated well with the interfacial layer thickness, we performed systematic experimental studies on different polymer nanocomposites by varying the chain stiffness. Combining small-angle X-ray scattering, broadband dielectric spectroscopy and temperature modulated differential scanning calorimetry, we find a good correlation between the polymer Kuhn length and the thickness of the interfacial layer, confirming the earlier computer simulations results. Our findings provide a direct guidance for the design of new PNCs with desired properties.

  10. Optimization of the Energy Level Alignment between the Photoactive Layer and the Cathode Contact Utilizing Solution-Processed Hafnium Acetylacetonate as Buffer Layer for Efficient Polymer Solar Cells.

    PubMed

    Yu, Lu; Li, Qiuxiang; Shi, Zhenzhen; Liu, Hao; Wang, Yaping; Wang, Fuzhi; Zhang, Bing; Dai, Songyuan; Lin, Jun; Tan, Zhan'ao

    2016-01-13

    The insertion of an appropriate interfacial buffer layer between the photoactive layer and the contact electrodes makes a great impact on the performance of polymer solar cells (PSCs). Ideal interfacial buffer layers could minimize the interfacial traps and the interfacial barriers caused by the incompatibility between the photoactive layer and the electrodes. In this work, we utilized solution-processed hafnium(IV) acetylacetonate (Hf(acac)4) as an effective cathode buffer layer (CBL) in PSCs to optimize the energy level alignment between the photoactive layer and the cathode contact, with the short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) all simultaneously improved with Hf(acac)4 CBL, leading to enhanced power conversion efficiencies (PCEs). Ultraviolet photoemission spectroscopy (UPS) and scanning Kelvin probe microscopy (SKPM) were performed to confirm that the interfacial dipoles were formed with the same orientation direction as the built-in potential between the photoactive layer and Hf(acac)4 CBL, benefiting the exciton separation and electron transport/extraction. In addition, the optical characteristics and surface morphology of the Hf(acac)4 CBL were also investigated. PMID:26684416