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Sample records for cadmium telluride photovoltaic

  1. Cadmium telluride photovoltaic radiation detector

    DOEpatents

    Agouridis, D.C.; Fox, R.J.

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semi-conductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  2. Cadmium telluride photovoltaic radiation detector

    DOEpatents

    Agouridis, Dimitrios C.; Fox, Richard J.

    1981-01-01

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  3. Device characterization of cadmium telluride photovoltaics

    NASA Astrophysics Data System (ADS)

    Geisthardt, Russell M.

    Thin-film photovoltaics have the potential to make a large impact on the world energy supply. They can provide clean, affordable energy for the world. Understanding the device physics and behavior will enable increases in efficiency which will increase their impact. This work presents novel approaches for evaluating efficiency, as well as a set of tools for in-depth whole-cell and uniformity characterization. The understanding of efficiency losses is essential for reducing or eliminating the losses. The efficiency can be characterized by a breakdown into three categories: solar spectrum, optical, and electronic efficiency. For several record devices, there is little difference in the solar spectrum efficiency, modest difference in the optical efficiency, and large difference in the electronic efficiency. The losses within each category can also be further characterized. The losses due to the broad solar spectrum and finite temperature are well understood from a thermodynamic physics perspective. Optical losses can be fully characterized using quantum efficiency and optical measurements. Losses in fill factor can be quantified from series and shunt resistance, as well as the expected fill factor from the measured V oc and A. Open-circuit voltage losses are the most significant, but are also be the hardest to understand, as well as the most technology-dependent. Characterization of the whole cell helps to understand the behavior, performance, and properties of the cell. Several different tools can be used for whole-cell characterization, including current-voltage, quantum efficiency, and capacitance measurements. Each of these tools give specific information about the behavior of the cell. When combined, they can lead to a more complete understanding of the cell performance than when taken individually. These tools were applied to several specific CdTe experiments. They have helped to characterize the baseline performance of both the deposition tool and the

  4. Brief review of cadmium telluride-based photovoltaic technologies

    NASA Astrophysics Data System (ADS)

    Başol, Bülent M.; McCandless, Brian

    2014-01-01

    Cadmium telluride (CdTe) is the most commercially successful thin-film photovoltaic technology. Development of CdTe as a solar cell material dates back to the early 1980s when ˜10% efficient devices were demonstrated. Implementation of better quality glass, more transparent conductive oxides, introduction of a high-resistivity transparent film under the CdS junction-partner, higher deposition temperatures, and improved Cl-treatment, doping, and contacting approaches yielded >16% efficient cells in the early 2000s. Around the same time period, use of a photoresist plug monolithic integration process facilitated the demonstration of the first 11% efficient module. The most dramatic advancements in CdTe device efficiencies were made during the 2013 to 2014 time frame when small-area cell conversion efficiency was raised to 20% range and a champion module efficiency of 17% was reported. CdTe technology is attractive in terms of its limited life-cycle greenhouse gas and heavy metal emissions, small carbon footprint, and short energy payback times. Limited Te availability is a challenge for the growth of this technology unless Te utilization rates are greatly enhanced along with device efficiencies.

  5. Process for producing cadmium sulfide on a cadmium telluride surface

    DOEpatents

    Levi, Dean H.; Nelson, Art J.; Ahrenkiel, Richard K.

    1996-01-01

    A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.

  6. Mercury Telluride and Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    2004-01-01

    A semiconductor's usefulness is determined by how atoms are ordered within the crystal's underlying three-dimensional structure. While this mercury telluride and cadmium telluride alloy sample mixes completely in Earth -based laboratories, convective flows prevent them from mixing uniformly.

  7. Mercury Telluride and Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    2004-01-01

    A semiconductor's usefulness is determined by how atoms are ordered within the crystal's underlying three-dimensional structure. While this mercury telluride and cadmium telluride alloy sample mixes completely in Earth -based laboratories, convective flows prevent them from mixing uniformly. In space, the ingredients mix more homogenously, resulting in a superior product.

  8. Thin film cadmium telluride solar cell

    SciTech Connect

    Mitchell, R.

    1987-03-17

    A photovoltaic cell is described comprising: (a) a substrate layer consisting of a transparent or semi-transparent material; (b) an n conductivity type layer of tin oxide contiguous to the substrate layer; (c) a rho conductivity type layer of polycrystalline cadmium telluride contiguous to the layer of tin oxide thereby forming a pn junction, the layer of cadmium telluride containing atoms of phosphorus; and (d) a layer of lead telluride contiguous to the layer of the cadmium telluride.

  9. Process for producing cadmium sulfide on a cadmium telluride surface

    DOEpatents

    Levi, D.H.; Nelson, A.J.; Ahrenkiel, R.K.

    1996-07-30

    A process is described for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness. 12 figs.

  10. Cadmium telluride photovoltaic manufacturing technology. Annual subcontract report, 7 January 1994--6 January 1995

    SciTech Connect

    Weisiger, D.; Albright, S.P.; Brines, J.; Thompson, R.

    1995-11-01

    This report describes work performed by Golden Photon, Inc. (GPI), to conduct research under the PVMaT program, Phase 2B. The objective of the research is to advance GPI`s manufacturing technology, reduce module production costs, increase average module performance, and identify ways to expand production capacity. More specifically, the tasks established for Phase I were to design and install leasehold improvements for the 2-MW production line; to improve and develop product design, efficiency, and marketability; to ensure uninterrupted qualified supplies and raw materials for production; to address environmental, health, and safety issues encountered during production of photovoltaic modules; and to reduce the cost of manufacturing modules. During the first half of this reporting period, the development, design, and debugging of cell interconnection equipment critical to start-up was completed. During the second and third quarters, the primary focus was on the substrate deposition steps (tin oxide, cadmium sulfide, and cadmium telluride) and cell interconnection steps (division). In general, process development, engineering, and quality teams continued to focus on identifying, baselining, and improving (through redesign) actual process equipment operation parameters to meet the required PV panel specifications and improve process throughput rates and yields.

  11. Spectroscopic ellipsometry as a process control tool for manufacturing cadmium telluride thin film photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Smith, Westcott P.

    In recent decades, there has been concern regarding the sustainability of fossil fuels. One of the more promising alternatives is Cadmium Telluride (CdTe) thin-film photovoltaic (PV) devices. Improved quality measurement techniques may aid in improving this existing technology. Spectroscopic ellipsometry (SE) is a common, non-destructive technique for measuring thin films in the silicon wafer industry. SE results have also been tied to properties believed to play a role in CdTe PV device efficiency. A study assessing the potential of SE for use as a quality measurement tool had not been previously reported. Samples of CdTe devices produced by both laboratory and industrial scale processes were measured by SE and Scanning Electron Microscopy (SEM). Mathematical models of the optical characteristics of the devices were developed and fit to SE data from multiple angles and locations on each sample. Basic statistical analysis was performed on results from the automated fits to provide an initial evaluation of SE as a quantitative quality measurement process. In all cases studied, automated SE models produced average stack thickness values within 10% of the values produced by SEM, and standard deviations for the top bulk layer thickness were less than 1% of the average values.

  12. Chemical and electronic structure of surfaces and interfaces in cadmium telluride based photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Duncan, Douglas Arthur

    The surface and interface properties are of the upmost importance in the understanding, optimization, and application for photovoltaic devices. Often the chemical, electronic, and morphological properties of the films are empirically optimized, however when progress slows, a fundamental understanding of these properties can lead to breakthroughs. In this work, surfaces and interfaces of solar cell-relevant films are probed with a repertoire of X-ray analytical and microanalysis techniques including X-ray photoelectron (XPS), X-ray excited Auger electron (XAES), X-ray emission (XES) spectroscopies, and atomic force (AFM) and scanning electron (SEM) microscopies. Silicon-based devices currently dominate the solar market, which is rather inflexible in application. Cadmium telluride (CdTe)-based technologies offer a cost-effective alternative with additional benefits including roll-to-roll production and high conversion efficiencies. This, like other next generation thin film solar cells, needs more optimization to replace Si. The charge transport across a heterojunction is of great importance to drive up the conversion efficiency of the device. The interface of a CdS buffer layer and SnO2:F front contact was investigated as a function of CdCl2-treatment. In order to measure the fully formed interface, after subsequent layer deposition and heat treatments, mechanical stressing of the layer stack resulted in physical separation at the desired interface. By combining multiple spectroscopic and morphologic methods a complete picture has evolved. CdS is often used as a buffer layer in CdTe based devices. This layer is empirically optimized to be very thin (˜100 nm) due to the parasitic light absorption in and around the 2 eV range. By widening the band gap or replacing it with a more transparent material, more photons can be absorbed by the CdTe layer and significantly increase the overall conversion efficiency of the device. CdS:O and Zn(1-x)MgxO were studied as possible

  13. Physical characterization of cadmium telluride/cadmium sulfide photovoltaics: Defects, fields, and micrononuniformities

    NASA Astrophysics Data System (ADS)

    Shvydka, Diana

    Recent advances in large area thin-film photovoltaic manufacturing have raised a number of problems related to the physical parameters and processes behind the device efficiency and stability. The characteristics of interest include the defect spectra and related optical absorption, the built-in electric field distribution, the degree of lateral uniformity of the device, and the device stability. Established in this thesis is a set of techniques appropriate for the physical characterization of the above features in CdTe/CdS solar cells, addressing the issues of device spectra vs. energy (as revealed in the optical absorption, photoluminescence (PL), and admittance spectroscopy); the electric field distribution analyzed by means of bias dependent PL, and, indirectly, by capacitance measurements; device lateral resistivity and uniformity, through the phenomenon of nonlocal optical response and PL mapping; local parameter fluctuations as appear in virtually all of the above cases. The most important physical conclusions made are: energy spectra of polycrystalline CdTe based photovoltaics combine the features of crystalline materials, such as identifiable point defects, and amorphous materials, which exhibit continuous spectra of localized states; the concept of a single-defect (elemental) capacitance is for the first time defined and applied to estimate the density of states in polycrystalline p-n junctions; a phenomenon of bias-dependent PL in CdTe based photovoltaics is for the first time observed and modeled; a new phenomenon of nonlocal photovoltaic response is observed and interpreted. The results suggest several practical applications, such as: absorption and PL measurements as a diagnostic tool for monitoring the CdCl2, quality of treatments; admittance spectroscopy techniques to diagnose the material quality and degradation through its defect spectra and concentration; bias-dependent PL as a sensitive nondestructive accelerated life testing tool; nonlocal PV

  14. Structural and Optical Properties of Sputtered Cadmium Telluride Thin Films Deposited on Flexible Substrates for Photovoltaic Applications.

    PubMed

    Song, Woochang; Lee, Kiwon; Kim, Donguk; Lee, Jaehyeong

    2016-05-01

    Cadmium telluride (CdTe) is a photovoltaic technology based on the use of thin films of CdTe to absorb and convert sunlight into electricity. In this paper, polycrystalline CdTe thin films were deposited using radio frequency magnetron sputtering onto flexible substrates including polyimide and molybdenum foil. The structural and optical properties of the films grown at various sputtering pressures were investigated using X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), and UV/Nis/NIR spectrophotometry. The sputtering pressure was found to have significant effects on the structural properties, including crystallinity, preferential orientation, and microstructure. Deterioration of the optical properties of CdTe thin films were observed at high sputtering pressure. PMID:27483904

  15. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

  16. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2013-06-01

    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  17. Potential health and safety hazards associated with the production of cadmium telluride, copper indium diselenide, and zinc phosphide photovoltaic cells

    SciTech Connect

    Moskowitz, P.D.; Fthenakis, V.M.; Lee, J.C.

    1985-04-01

    In large-scale manufacture of cadmium telluride, copper indium diselenide, and zinc phosphide photovoltaic cells, the materials and equipment used may present potential health and safety hazards to workers and the public. These hazards were identified by reviewing data on process materials, availability of control technology, biomedical effects, and health and environmental standards. Quantitative estimates of material inputs and outputs, and control technology costs for selected processes were based on preliminary engineering designs for hypothetical 10-MWp/yr photovoltaic cell production facilities. In the fabrication of these devices, unusually large quantities of some toxic gases may be used; large demands for phosphine and hydrogen selenide are of special concern. Because projected usage of these materials is much larger than the current one, a thorough evaluation of engineering controls will be needed before the technologies are commercialized. These materials could also present occupational health hazards. Some management options to reduce occupational exposures to these materials are presented. Although specific federal and state regulations have not been promulgated for emissions from the photovoltaic industry, prudent engineering practice should be applied to all waste streams - solid, atmospheric, or liquid - containing toxic pollutants to limit discharges of these materials. Control costs for most atmospheric waste streams should not be large (<0.01 cent per watt); for phosphine, however, costs are potentially much larger (4.4 cents per watt). Some processes may also produce large quantities of solid waste defined as toxic or hazardous under US Environmental Protection Agency guidelines. Disposal costs for these materials are presented.

  18. Derived reference doses for three compounds used in the photovoltaics industry: Copper indium diselenide, copper gallium diselenide, and cadmium telluride

    SciTech Connect

    Moskowitz, P.D.; Bernholc, N.; DePhillips, M.P.; Viren, J.

    1995-07-06

    Polycrystalline thin-film photovoltaic modules made from copper indium diselenide (CIS), copper gallium diselenide (CGS), and cadmium telluride (CdTe) arc nearing commercial development. A wide range of issues are being examined as these materials move from the laboratory to large-scale production facilities to ensure their commercial success. Issues of traditional interest include module efficiency, stability and cost. More recently, there is increased focus given to environmental, health and safety issues surrounding the commercialization of these same devices. An examination of the toxicological properties of these materials, and their chemical parents is fundamental to this discussion. Chemicals that can present large hazards to human health or the environment are regulated often more strictly than those that are less hazardous. Stricter control over how these materials are handled and disposed can increase the costs associated with the production and use of these modules dramatically. Similarly, public perception can be strongly influenced by the inherent biological hazard that these materials possess. Thus, this report: presents a brief background tutorial on how toxicological data are developed and used; overviews the toxicological data available for CIS, CGS and CdTe; develops ``reference doses`` for each of these compounds; compares the reference doses for these compounds with those of their parents; discusses the implications of these findings to photovoltaics industry.

  19. Thin film cadmium telluride solar cells

    SciTech Connect

    Chu, T.L.; Chu, S.S.; Xi, X.J.; Yang, Y.T.

    1983-05-01

    Cadmium telluride films have been deposited on coated graphite and mullite substrates by the direct combination of the vapors of the elements in a hydrogen atmosphere. The properties of nearly stoichiometric films on mullite substrates were measured by the van der Pauw technique in the temperature range of 25/sup 0/ - 150/sup 0/C. The deposition of n-type cadmium telluride by using hydrogen iodide as a dopant and the deposition of p-type cadmium telluride films by using arsine or phosphine as a dopant were studied. Schottky barrier solar cells were prepared from n-type cadmium telluride films and heterojunction cells from p-type cadmium telluride films.

  20. Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

    SciTech Connect

    Gopal, Vishnu E-mail: wdhu@mail.sitp.ac.cn; Qiu, WeiCheng; Hu, Weida E-mail: wdhu@mail.sitp.ac.cn

    2014-11-14

    The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, I{sub excess} = I{sub r0} + K{sub 1} exp (K{sub 2} V), where I{sub r0}, K{sub 1}, and K{sub 2} are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.

  1. Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe

    SciTech Connect

    Gessert, T. A.

    2012-01-01

    The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

  2. Thin-film cadmium telluride photovoltaic cells. Final subcontract report, 1 November 1992--1 January 1994

    SciTech Connect

    Compaan, A.D.; Bohn, R.G.

    1994-09-01

    This report describes work to develop and optimize radio-frequency (rf) sputtering for the deposition of thin films of cadmium telluride (CdTe) and related semiconductors for thin-film solar cells. Pulsed laser physical vapor deposition was also used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. The sputtering work utilized a 2-in diameter planar magnetron sputter gun. The film growth rate by rf sputtering was studied as a function of substrate temperature, gas pressure, and rf power. Complete solar cells were fabricated on tin-oxide-coated soda-lime glass substrates. Currently, work is being done to improve the open-circuit voltage by varying the CdTe-based absorber layer, and to improve the short-circuit current by modifying the CdS window layer.

  3. High-Efficiency Thin-Film Cadmium Telluride Photovoltaic Cells; Final Subcontract Report,

    SciTech Connect

    A.D. Compaan; R.G. Bohn.

    1998-12-09

    This report describes work performed during the past year by The University of Toledo photovoltaics group. Researchers continued to develop rf sputtering for CdS/CdTe thin-film solar cells and to optimize the post-deposition process steps to match the characteristics of the sputtering process. During the fourth phase of the present contract, we focused on determining factors that limit the efficiency in our all-sputtered thin-film CdTe solar cells on soda-lime glass. These issues include controlling CdS/CdTe interdiffusion, understanding the properties of the CdSxTe1-x alloy, optimizing process conditions for CdCl2 treatments, manipulating the influence of ion bombardment during rf sputtering, and understanding the role of copper in quenching photoluminescence and carrier lifetimes in CdTe. To better understand the important CdS/CdTe interdiffusion process, we have continued our collaboration with the University at Buffalo and Brookhaven National Synchrotron Light Source in measurements using grazing-incidence X-rays. Interdiffusion results in the formation of the ternary alloy material CdSxTe1-x at or near the heterojunction, where its properties are critical to the operation of the solar cell. We have placed significant effort on characterizing this alloy, an effort begun in the last phase. A complete set of films spanning the alloy range, prepared by pulsed-laser deposition, has now been characterized by wavelength dispersive X-ray spectroscopy and optical absorption at NREL; by Raman scattering, X-ray diffraction, and electrical measurements in our lab; and by spectroscopic ellipsometry at Brooklyn College. We continued to participate in cooperative activity with the CdTe National Team. We prepared a series of depositions on borosilicate glass substrates having doped SnO2 layers coated with TiO2 (prepared by the University of South Florida and Harvard) and similar substrates having a resistive SnO2 layer on the doped tin oxide (fabricated by Golden Photon). The

  4. Imaging as characterization techniques for thin-film cadmium telluride photovoltaics

    NASA Astrophysics Data System (ADS)

    Zaunbrecher, Katherine

    The goal of increasing the efficiency of solar cell devices is a universal one. Increased photovoltaic (PV) performance means an increase in competition with other energy technologies. One way to improve PV technologies is to develop rapid, accurate characterization tools for quality control. Imaging techniques developed over the past decade are beginning to fill that role. Electroluminescence (EL), photoluminescence (PL), and lock-in thermography are three types of imaging implemented in this study to provide a multifaceted approach to studying imaging as applied to thin-film CdTe solar cells. Images provide spatial information about cell operation, which in turn can be used to identify defects that limit performance. This study began with developing EL, PL, and dark lock-in thermography (DLIT) for CdTe. Once imaging data were acquired, luminescence and thermography signatures of non-uniformities that disrupt the generation and collection of carriers were identified and cataloged. Additional data acquisition and analysis were used to determine luminescence response to varying operating conditions. This includes acquiring spectral data, varying excitation conditions, and correlating luminescence to device performance. EL measurements show variations in a cell's local voltage, which include inhomogeneities in the transparent-conductive oxide (TCO) front contact, CdS window layer, and CdTe absorber layer. EL signatures include large gradients, local reduction of luminescence, and local increases in luminescence on the interior of the device as well as bright spots located on the cell edges. The voltage bias and spectral response were analyzed to determine the response of these non-uniformities and surrounding areas. PL images of CdTe have not shown the same level of detail and features compared to their EL counterparts. Many of the signatures arise from reflections and severe inhomogeneities, but the technique is limited by the external illumination source used to

  5. Process for producing large grain cadmium telluride

    DOEpatents

    Hasoon, F.S.; Nelson, A.J.

    1996-01-16

    A process is described for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 {micro}m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10{sup {minus}6} torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 {micro}m.

  6. Process for producing large grain cadmium telluride

    DOEpatents

    Hasoon, Falah S.; Nelson, Art J.

    1996-01-01

    A process for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 .mu.m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10.sup.-6 torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 .mu.m.

  7. Research support for cadmium telluride crystal growth

    NASA Technical Reports Server (NTRS)

    Rosenberger, Franz; Banish, Michael

    1993-01-01

    Work performed during the period 11 Feb. 1992 to 10 Aug. 1993 on research support for cadmium telluride crystal growth is reported. Work on chemical impurity characterization and mass spectroscopy is described.

  8. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    SciTech Connect

    Chu, T.L. )

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  9. High-efficiency, thin-film cadmium telluride photovoltaic cells. Annual subcontract report, 20 January 1994--19 January 1995

    SciTech Connect

    Compaan, A.D.; Bohn, R.G.; Rajakarunanayake, Y.

    1995-08-01

    This report describes work performed to develop and optimize the process of radio frequency (RF) sputtering for the fabrication of thin-film solar cells on glass. The emphasis is on CdTe-related materials including CdTe, CdS, ZnTe, and ternary alloy semiconductors. Pulsed laser physical vapor deposition (LPVD) was used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. For the sputtering work, a two-gun sputtering chamber was implemented, with optical access for monitoring temperature and growth rate. We studied the optical and electrical properties of the plasmas produced by two different kinds of planar magnetron sputter guns with different magnetic field configurations and strengths. Using LPVD, we studied alloy semiconductors such as CdZnTe and heavily doped semiconductors such as ZnTe:Cu for possible incorporation into graded band gap CdTe-based photovoltaic devices.

  10. Floating zone melting of cadmium telluride

    NASA Technical Reports Server (NTRS)

    Chang, Wen-Ming; Regel, L. L.; Wilcox, W. R.

    1992-01-01

    To produce superior crystals of cadmium telluride, floating zone melting in space has been proposed. Techniques required for floating zone melting of cadmium telluride are being developed. We have successfully float-zoned cadmium telluride on earth using square rods. A resistance heater was constructed for forming the molten zone. Evaporation of the molten zone was controlled by adding excess cadmium to the growth ampoule combined with heating of the entire ampoule. An effective method to hold the feed rod was developed. Slow rotation of the growth ampoule was proven experimentally to be necessary to achieve a complete symmetric molten zone. Most of the resultant cylindrical rods were single crystals with twins. Still needed is a suitable automatic method to control the zone length. We tried a fiber optical technique to control the zone length, but experiments showed that application of this technique to automate zone length control is unlikely to be successful.

  11. Transient Response of Cadmium Telluride Modules to Light Exposure: Preprint

    SciTech Connect

    Deline, C.; del Cueto, J.; Albin, D. S.; Petersen, C.; Tyler, L.; TamizhMani, G.

    2011-07-01

    Commercial cadmium telluride (CdTe) photovoltaic (PV) modules from three different manufacturers were monitored for performance changes during indoor and outdoor light-exposure. Short-term transients in Voc were recorded on some modules, with characteristic times of ~1.1 hours. Outdoor performance data shows a similar drop in Voc after early morning light exposure. Preliminary analysis of FF changes show light-induced changes on multiple time scales, including a long time scale.

  12. Thin-film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Chu, T. L.

    1987-10-01

    Cadmium telluride, with a room-temperature band-gap energy of 1.5 eV, is a promising thin-film photovoltaic material. The major objective of this research has been to demonstrate thin-film CdTe heterojunction solar cells with a total area greater than 1 sq cm and photovoltaic efficiencies of 13 percent or more. Thin-film p-CdTe/CdS/SnO2:F/glass solar cells with an AM1.5 efficiency of 10.5 percent have been reported previously. This report contains results of work done on: (1) the deposition, resistivity control, and characterization of p-CdTe films by the close-spaced sublimation process; (2) the deposition of large-band-gap window materials; (3) the electrical properties of CdS/CdTe heterojunctions; (4) the formation of stable, reproducible, ohmic contacts (such as p-HgTe) to p-CdTe; and (5) the preparation and evaluation of heterojunction solar cells.

  13. Thin-film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    1986-09-01

    This is the final technical progress report of a research program entitled Thin-Film Cadmium Telluride Solar Cells. The major objective was to demonstrate chemical vapor deposition (CVD)-grown CdTe devices with a photovoltaic efficiency of at least 10%. The work included: (1) CVD and characterization of p-CdTe films of controlled resistivity; (2) deposition and characterization of heterojunction partners; (3) surface passivation of CdTe; and (4) preparation and characterization of thin-film solar cells. The CVD of p-CdTe was optimized with emphasis on resistivity control through nonstoichiometry and extrinsic doping. Both carbon and oxygen were identified as acceptors. The use of thermal oxidation for surface passivation of CdTe was investigated using capacitance-voltage measurement. Device-quality thermal oxide can be prepared by hydrogen annealing of CdTe before oxidation. Deposition and characterization of CdS, CdO, and ZnO:In were also carried out. The best thin-film cell to date had a conversion efficiency near 9%.

  14. Transport phenomena in the close-spaced sublimation deposition process for manufacture of large-area cadmium telluride photovoltaic panels: Modeling and optimization

    NASA Astrophysics Data System (ADS)

    Malhotra, C. P.

    With increasing national and global demand for energy and concerns about the effect of fossil fuels on global climate change, there is an increasing emphasis on the development and use of renewable sources of energy. Solar cells or photovoltaics constitute an important renewable energy technology but the major impediment to their widespread adoption has been their high initial cost. Although thin-film photovoltaic semiconductors such as cadmium sulfide-cadmium telluride (CdS/CdTe) can potentially be inexpensively manufactured using large area deposition techniques such as close-spaced sublimation (CSS), their low stability has prevented them from becoming an alternative to traditional polycrystalline silicon solar cells. A key factor affecting the stability of CdS/CdTe cells is the uniformity of deposition of the thin films. Currently no models exist that can relate the processing parameters in a CSS setup with the film deposition uniformity. Central to the development of these models is a fundamental understanding of the complex transport phenomena which constitute the deposition process which include coupled conduction and radiation as well as transition regime rarefied gas flow. This thesis is aimed at filling these knowledge gaps and thereby leading to the development of the relevant models. The specific process under consideration is the CSS setup developed by the Materials Engineering Group at the Colorado State University (CSU). Initially, a 3-D radiation-conduction model of a single processing station was developed using the commercial finite-element software ABAQUS and validated against data from steady-state experiments carried out at CSU. A simplified model was then optimized for maximizing the steady-state thermal uniformity within the substrate. It was inferred that contrary to traditional top and bottom infrared lamp heating, a lamp configuration that directs heat from the periphery of the sources towards the center results in the minimum temperature

  15. Cadmium telluride films on foreign substrates

    SciTech Connect

    Chu, T.L.; Chu, S.S.; Pauleau, Y.; Murthy, K.; Stokes, E.D.; Russell, P.E.

    1983-01-01

    Thin films of cadmium telluride have been deposited on mullite and tungsten-coated graphite substrates at 500--700 /sup 0/C by the direct combination of cadmium and tellurium in a hydrogen atmosphere. Their microstructure and crystallographic properties were studied. The importance of controlling the Cd/Te molar ratio in the reaction mixture to obtain nearly stoichiometric films was demonstrated. The electrical properties of nonstoichiometric and nearly stoichiometric films on mullite substrates were measured by the van der Pauw technique. Schottky barriers were used to measure the electrical properties of cadmium telluride films on W/graphite substrates. The effective intragrain minority carrier diffusion length in n-type films was measured by the scanned electron beam method using a Schottky barrier structure.

  16. Cadmium zinc telluride charged particle nuclear detectors

    SciTech Connect

    Toney, J.E. |; James, R.B.; Antolak, A.

    1997-02-01

    This report describes the improvements in understanding of transport phenomena in cadmium zinc telluride radiation sensors achieved through studies of alpha particle response and spatially resolved photoconductivity mapping. Alpha particle response waveforms and photocurrent profiles both indicate non-uniformities in the electric field which may have detrimental effects on detector performance. Identifying and eliminating the sources of these nonuniformities will ultimately lead to improved detector performance.

  17. Electron mobility in mercury cadmium telluride

    NASA Technical Reports Server (NTRS)

    Patterson, James D.

    1988-01-01

    A previously developed program, which includes all electronic interactions thought to be important, does not correctly predict the value of electron mobility in mercury cadmium telluride particularly near room temperature. Part of the reason for this discrepancy is thought to be the way screening is handled. It seems likely that there are a number of contributors to errors in the calculation. The objective is to survey the calculation, locate reasons for differences between experiment and calculation, and suggest improvements.

  18. Numerical Simulation of the Performance Characteristics, Instability, and Effects of Band Gap Grading in Cadmium Telluride Based Photovoltaic Devices

    SciTech Connect

    Michael David Petersen

    2001-05-01

    Using computer simulations, the performance of several CdTe based photovoltaic structures has been studied. The advantages and disadvantages of band gap grading, through the use of (Zn,Cd)Te, have also been investigated in these structures. Grading at the front interface between a CdS window layer and a CdTe absorber layer, can arise due to interdiffusion between the materials during growth or due to the intentional variation of the material composition. This grading has been shown to improve certain performance metrics, such as the open-circuit voltage, while degrading others, such as the fill factor, depending on the amount and distance of the grading. The presence of a Schottky barrier as the back contact has also been shown to degrade the photovoltaic performance of the device, resulting in a characteristic IV curve. However, with the appropriate band gap grading at the back interface, it has been shown that the performance can be enhanced through more efficient carrier collection. These results were then correlated with experimental observations of the performance degradation in devices subjected to light and heat stress.

  19. Numerical Simulation of the Performance Characteristics, Instability, and Effects of Band Gap Grading in Cadmium Telluride Based Photovoltaic Devices

    SciTech Connect

    Michael David Petersen

    2001-06-27

    Using computer simulations, the performance of several CdTe based photovoltaic structures has been studied. The advantages and disadvantages of band gap grading, through the use of (Zn, Cd)Te, have also been investigated in these structures. Grading at the front interface between a CdS window layer and a CdTe absorber layer, can arise due to interdiffusion between the materials during growth or due to the intentional variation of the material composition. This grading has been shown to improve certain performance metrics, such as the open-circuit voltage, while degrading others, such as the fill factor, depending on the amount and distance of the grading. The presence of a Schottky barrier as the back contact has also been shown to degrade the photovoltaic performance of the device, resulting in a characteristic IV curve. However, with the appropriate band gap grading at the back interface, it has been shown that the performance can be enhanced through more efficient carrier collection. These results were then correlated with experimental observations of the performance degradation in devices subjected to light and heat stress.

  20. High-efficiency thin-film cadmium telluride photovoltaic cells. Annual technical report, January 20, 1996--January 19, 1997

    SciTech Connect

    Compaan, A D; Bohn, R G; Contreras-Puente, G

    1997-08-01

    The University of Toledo photovoltaics group has been instrumental in developing rf sputtering for CDs/CdTe thin-film solar cells. During the third phase of the present contract our work focussed on efforts to determine factors which limit the efficiency in our {open_quotes}all-sputtered{close_quotes} thin-film CdTe solar cells on soda-lime glass. We find that our all-sputtered cells, which are deposited at substantially lower temperature than those by sublimation or vapor deposition, require less aggressive CdCl{sub 2} treatments than do other deposition techniques and this is presumably related to CDs/CdTe interdiffusion. The CDs/CdTe interdiffusion process has been studied by several methods, including photoluminescence and capacitance-voltage measurements. Furthermore, we have deposited special thin bilayer films on quartz and borosilicate glass. Interdiffusion in these thin bilayers have been probed by Rutherford backscattering, with collaborators at Case Western Reserve University, and grazing incidence x-ray scattering (GIXS), with collaborators at the University at Buffalo and Brookhaven National Lab. Also, in order better to understand the properties of the ternary alloy material, we used laser physical vapor deposition to prepare a series of CdS{sub x}Te{sub 1-x} films on borosilicate glass. The composition of the alloy films was determined by wavelength dispersive x-ray spectroscopy at NREL. These films are currently being investigated by us and other groups at NREL and IEC.

  1. Polycrystalline Cadmium Telluride Photovoltaic Devices

    NASA Astrophysics Data System (ADS)

    Gessert, Timothy A.; Bonnet, Dieter

    2015-10-01

    The following sections are included: * Introduction * Brief history of CdTe PV devices * Initial attempts towards commercial modules * Review of present commercial industry/device designs * General CdTe material properties * Layer-specific process description for superstrate CdTe devices * Where is the junction? * Considerations for large-scale deployment * Conclusions * Acknowledgements * References

  2. Towards understanding junction degradation in cadmium telluride solar cells

    SciTech Connect

    Nardone, Marco

    2014-06-21

    A degradation mechanism in cadmium telluride (CdTe/CdS) solar cells is investigated using time-dependent numerical modeling to simulate various temperature, bias, and illumination stress conditions. The physical mechanism is based on defect generation rates that are proportional to nonequilibrium charge carrier concentrations. It is found that a commonly observed degradation mode for CdTe/CdS solar cells can be reproduced only if defects are allowed to form in a narrow region of the absorber layer close to the CdTe/CdS junction. A key aspect of this junction degradation is that both mid-gap donor and shallow acceptor-type defects must be generated simultaneously in response to photo-excitation or applied bias. The numerical approach employed here can be extended to study other mechanisms for any photovoltaic technology.

  3. Cadmium telluride in tellurium—cadmium films consisting of ultradispersed particles

    NASA Astrophysics Data System (ADS)

    Tuleushev, Yu. Zh.; Volodin, V. N.; Migunova, A. A.; Lisitsyn, V. N.

    2015-08-01

    Solid solutions of tellurium in cadmium, cadmium in tellurium, and cadmium in cadmium telluride synthesized during sputtering are formed for the first time by ion-plasma sputtering and the codeposition of ultradispersed Te and Cd particle fluxes onto substrates moving with respect to the fluxes. This fact supports thermofluctuation melting and coalescence of small particles. The lattice parameter of cadmium telluride, which coexists with an amorphous solid solution of tellurium in cadmium in a coating, is smaller than the tabulated value and reaches it when the cadmium concentration in a coating increases to 70 at %. The lattice parameter of the fcc lattice of cadmium telluride increases with the cadmium concentration in a coating according to the linear relation a = 0.0002CCd + 0.6346 nm (where CCd is the cadmium concentration in the coating, at %), which is likely to indicate a certain broadening of the homogeneity area. The estimation of the particle size shows that the cadmium telluride grain size is 10-15 nm, which implies that the coatings are nanocrystalline. The absorption and transmission spectra of the tellurium—cadmium films at the fundamental absorption edge demonstrate that their energy gaps are larger than that of stoichiometric CdTe, which can be explained by the experimental conditions of crystal structure formation.

  4. Thin films and solar cells of cadmium telluride and cadmium zinc telluride

    NASA Astrophysics Data System (ADS)

    Ferekides, Christos Savva

    The objectives of this dissertation are to investigate (1) the metalorganic chemical vapor deposition (MOCVD) and properties of cadmium telluride (CdTe) and cadmium zinc telluride (Cd(1-x)Zn(z)Te) films and junctions, and their potential application to solar cells, and (2) the fabrication and characterization of CdTe solar cells by the close spaced sublimation (CSS) technique. CdTe and Cd(1-x)Zn(x)Te films have been deposited by MOCVD on a variety of substrates at 300-400 C. The effect of the deposition parameters and post deposition heat treatments on the electrical, optical, and structural properties have been investigated. Heterojunctions of the configuration CdTe/transparent conducting semiconductor (TCS) and Cd(1-x)Zn(x)Te/TCS have been prepared and characterized. CdTe(MOCVD)/CdS and Cd(1-x)Zn(x)Te(E sub g = 1.65eV)/Cd(1-x)Zn(x)S solar cells with efficiencies of 9.9 percent and 2.4 percent, respectively have been fabricated. The as-deposited CdTe(MOCVD)/CdS junctions exhibited high dark current densities due to deflects at the interface associated with small grain size. Their characteristics of the Cd(1-x)Zn(x)Te junctions degraded with increasing Zn concentration due to the crystalline quality and very small grain size (0.3 microns) in films with high ZnTe contents (greater than 25 percent). No effective post-deposition heat treatment has been developed. CdTe/CdS solar cells have also been fabricated by the close spaced sublimation (CSS). Significant improvements in material and processing have been made, and in collaboration with fellow researchers an AM1.5 conversion efficiency of 13.4 percent has been demonstrated, the highest efficiency ever measured for such devices. The highest conversion efficiency for the CdTe(CSS)/CdS solar cell was achieved by reaching high open-circuit voltages and fill factors, while the short-circuit current densities were moderate. These results indicate that further improvements to increase the short-circuit current densities

  5. Brain SPECT thallium using cadmium zinc telluride: a first experience.

    PubMed

    Farid, Karim; Queneau, Mathieu; Guernou, Mohamed; Lussato, David; Petras, Slavomir; Songy, Bernard

    2011-11-01

    A 70-year-old man underwent a thallium-201 brain SPECT in the work-up and characterization of a frontotemporal mass. SPECT images were performed on cadmium zinc telluride system during only 5 minutes and after the injection of only 2 mCi. Images demonstrated high thallium uptake in frontotemporal areas considered as a potential malignant tumor. Surgical removal confirmed the diagnosis of malignant glioblastoma. The thallium SPECT fast acquisition imaging on cadmium zinc telluride systems is feasible with reduced injected dose. This method allows a significantly decrease of patient radiation exposure without compromising the image quality. This initial experience needs to be confirmed and optimized in larger clinical studies. PMID:21975418

  6. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    SciTech Connect

    Chu, T.L.

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  7. Modeling insights on the melt growth of cadmium zinc telluride

    NASA Astrophysics Data System (ADS)

    Derby, Jeffrey J.; Zhang, Nan; Yeckel, Andrew

    2013-09-01

    Computational modeling has provided the understanding needed to unravel many of the unusual characteristics of the melt growth of cadmium zinc telluride. Results are presented that clarify the origin and benefit of horizontal Bridgman shelf growth employed for infrared substrate material. Another example provides insight on how a non-classical approach may provide improved outcomes using multiple-zone, gradient-freeze furnaces for the vertical Bridgman growth of bulk material for gamma radiation detectors.

  8. Gamma-ray peak shapes from cadmium zinc telluride detectors

    SciTech Connect

    Namboodiri, M.N.; Lavietes, A.D.; McQuaid, J.H.

    1996-09-01

    We report the results of a study of the peak shapes in the gamma spectra measured using several 5 x 5 x 5 mm{sup 3} cadmium zinc telluride (CZT) detectors. A simple parameterization involving a Gaussian and an exponential low energy tail describes the peak shapes sell. We present the variation of the parameters with gamma energy. This type of information is very useful in the analysis of complex gamma spectra consisting of many peaks.

  9. Removal of CdTe in acidic media by magnetic ion-exchange resin: a potential recycling methodology for cadmium telluride photovoltaic waste.

    PubMed

    Zhang, Teng; Dong, Zebin; Qu, Fei; Ding, Fazhu; Peng, Xingyu; Wang, Hongyan; Gu, Hongwei

    2014-08-30

    Sulfonated magnetic microspheres (PSt-DVB-SNa MPs) have been successfully prepared as adsorbents via an aqueous suspension polymerization of styrene-divinylbenzene and a sulfonation reaction successively. The resulting adsorbents were confirmed by means of Fourier transform infrared spectra (FT-IR), X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope equipped with an energy dispersive spectrometer (SEM-EDS) and vibrating sample magnetometer (VSM). The leaching process of CdTe was optimized, and the removal efficiency of Cd and Te from the leaching solution was investigated. The adsorbents could directly remove all cations of Cd and Te from a highly acidic leaching solution of CdTe. The adsorption process for Cd and Te reached equilibrium in a few minutes and this process highly depended on the dosage of adsorbents and the affinity of sulfonate groups with cations. Because of its good adsorption capacity in strong acidic media, high adsorbing rate, and efficient magnetic separation from the solution, PSt-DVB-SNa MPs is expected to be an ideal material for the recycling of CdTe photovoltaic waste. PMID:25128764

  10. High-Efficiency Thin-Film Cadmium Telluride Photovoltaic Cells; Final Subcontract Report, Final Technical Report, 21 January 1994-31 March 1998

    SciTech Connect

    Compaan, A. D.; Bohn, R. G.

    1998-12-09

    This report describes work performed during the past year by The University of Toledo photovoltaics group. Researchers continued to develop rf sputtering for CdS/CdTe thin-film solar cells and to optimize the post-deposition process steps to match the characteristics of the sputtering process. During the fourth phase of the present contract, we focused on determining factors that limit the efficiency in our ''all-sputtered'' thin-film CdTe solar cells on soda-lime glass. These issues include controlling CdS/CdTe interdiffusion, understanding the properties of the CdS{sub x}Te{sub 1-x} alloy, optimizing process conditions for CdCl{sub 2} treatments, manipulating the influence of ion bombardment during rf sputtering, and understanding the role of copper in quenching photoluminescence and carrier lifetimes in CdTe. To better understand the important CdS/CdTe interdiffusion process, we have continued our collaboration with the University at Buffalo and Brookhaven National Synchrotron Light Source in measurements using grazing-incidence X-rays. Interdiffusion results in the formation of the ternary alloy material CdS{sub x}Te{sub 1-x} at or near the heterojunction, where its properties are critical to the operation of the solar cell. We have placed significant effort on characterizing this alloy, an effort begun in the last phase. A complete set of films spanning the alloy range, prepared by pulsed-laser deposition, has now been characterized by wavelength dispersive X-ray spectroscopy and optical absorption at NREL; by Raman scattering, X-ray diffraction, and electrical measurements in our lab; and by spectroscopic ellipsometry at Brooklyn College. We continued to participate in cooperative activity with the CdTe National Team. We prepared a series of depositions on borosilicate glass substrates having doped SnO{sub 2} layers coated with TiO{sub 2} (prepared by the University of South Florida and Harvard) and similar substrates having a resistive SnO{sub 2} layer on

  11. Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    Amirtharaj, P. M.; Odell, M. S.; Bowman, R. C., Jr.; Alt, R. L.

    1988-01-01

    Ion implanted (100) cadmium telluride was studied using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10(16)/sq cm, and the annealing was accomplished at 500 C under vacuum. The spectral measurements were made at 77 K near the E(0) and E(1) critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated.

  12. Cadmium zinc telluride detector system for nuclear material assay

    SciTech Connect

    Lavietes, A.D.; McQuaid, J.H.; Paulus, T.J.

    1997-07-15

    Three tools were developed towards design of an ambient temperature radiometric instrument, namely the CZT Probe--a cadmium zinc telluride based gamma and x ray detector probe, the MicroNOMAD--a low power, portable multichannel analyzed, and CZTU--spectral analysis software that provides uranium enrichment analysis. The combination of these three tools with an optimal sodium iodide (NaI) detector provides the ability to search for and then analyze uranium as well as other radionuclides in the field. Several national and international organizations including the International Atomic Energy Agency, the European Communities Safeguards Directorate, US Customs, and US DOE have expressed interest and are currently evaluating these systems.

  13. The photocorrosion of n-cadmium telluride and its suppression

    NASA Astrophysics Data System (ADS)

    Curran, J. S.

    1980-09-01

    The photoelectrochemical properties of n-type cadmium telluride were studied in water and five other organic solvents, with a view to suppression of the photocorrosion reaction which prevents this and other n-type small bandgap semiconductors from being used in a practical semiconductor-electrolyte junction solar cell. Only the low donicity organic solvents propylene carbonate and methyl nitrate reduce the corrosion rate significantly. A stable photocurrent can be obtained using a solution of ferrocene in these two solvents but analysis of photoelectrolyzed solutions revealed a slow photocorrosion. The dependence of the flatband potential and of the practical significance with respect to solar cell applications considered.

  14. An evaluation of cadmium telluride detectors for computer assisted tomography.

    PubMed

    Chu, D; Kaufman, L; Hosier, K; Hoenninger, J

    1978-11-01

    Cadmium telluride (CdTe) presents a set of extremely attractive features as an X-ray detector for computer assisted tomography (CAT). It is stable and easily handled; has a high detection efficiency and very efficient conversion of energy to charge; and permits a high element density in a compact configuration. Unfortunately, effects due to "polarization," "tailing," high and variable leakage currents, and long "memory" are incompatible with the needs of CAT instrumentation. Pulse-processing techniques have allowed us to eliminate these problems in positive-sensitive detectors, thus opening the way for utilization of CdTe in CAT. PMID:711945

  15. High efficiency thin film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Chu, T. L.; Chu, S. S.; Ang, S. T.; Han, K. D.; Liu, Y. Z.

    Thin films of cadmium telluride deposited by the close-spaced sublimation (CSS) technique have been characterized and used for the preparation of CdS/CdTe heterojunction solar cells. The current-voltage and capacitance-voltage relations of CdS/CdTe heterojunctions indicate that the cleanliness of the interface is an important factor affecting the characteristics of the solar cells. The best cell has an area of about 1.2 sq cm and an AM1.5 (global) efficiency of 10.5 percent.

  16. Thin film cadmium telluride photovoltaic cells

    SciTech Connect

    Compaan, A.; Bohn, R. )

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  17. A preliminary study on the use of cadmium telluride detectors in the scintigraphy of thyroid gland

    NASA Astrophysics Data System (ADS)

    Mancini, A. M.; Quirini, A.; Vasanelli, L.; Bacci, C.; Bernabei, R.; Pani, R.; Rispoli, B.; Ballesio, P. L.; Furetta, C.

    1981-10-01

    A cadmium telluride gamma detector has been used for monitoring the activity of a radioactive tracer in a thyroid gland. Preliminary measurements are reported in comparison with those obtained with a standard NaI(Tl) scintillator.

  18. Study on thermal annealing of cadmium zinc telluride (CZT) crystals

    SciTech Connect

    Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; and James, R.B.

    2010-08-01

    Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

  19. Ion implantation of erbium into polycrystalline cadmium telluride

    SciTech Connect

    Ushakov, V. V. Klevkov, Yu. V.; Dravin, V. A.

    2015-05-15

    The specific features of the ion implantation of polycrystalline cadmium telluride with grains 20–1000 μm in dimensions are studied. The choice of erbium is motivated by the possibility of using rare-earth elements as luminescent “probes” in studies of the defect and impurity composition of materials and modification of the composition by various technological treatments. From the microphotoluminescence data, it is found that, with decreasing crystal-grain dimensions, the degree of radiation stability of the material is increased. Microphotoluminescence topography of the samples shows the efficiency of the rare-earth probe in detecting regions with higher impurity and defect concentrations, including regions of intergrain boundaries.

  20. Electric Field Distribution of Cadmium Zinc Telluride (CZT)

    SciTech Connect

    Yang,G.; Bolotnikov, A.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; James, R.B.

    2009-08-02

    Cadmium Zinc Telluride (CZT) is attracting increasing interest with its promise as a room-temperature nuclear-radiation-detector material. The distribution of the electric field in CZT detectors substantially affects their detection performance. At Brookhaven National Laboratory (BNL), we employed a synchrotron X-Ray mapping technique and a Pockels-effect measurement system to investigate this distribution in different detectors. Here, we report our latest experimental results with three detectors of different width/height ratios. A decrease in this ratio aggravates the non-uniform distribution of electric field, and focuses it on the central volume. Raising the bias voltage effectively can minimize such non-uniformity of the electric field distribution. The position of the maximum electric field is independent of the bias voltage; the difference between its maximum- and minimum-intensity of electric field increases with the applied bias voltage.

  1. Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact

    NASA Astrophysics Data System (ADS)

    Mount, Michael; Duarte, Fernanda; Paudel, Naba; Yan, Yanfa; Wang, Weining

    Cadmium Telluride (CdTe) solar cell is one of the most promising thin film solar cells and its highest efficiency has reached 21%. To keep improving the efficiency of CdTe solar cells, a few issues need to be addressed, one of which is the back contact. The back contact of CdTe solar cells are mostly Cu-base, and the problem with Cu-based back contact is that Cu diffuses into the grain boundary and into the CdS/CdTe junction, causing degradation problem at high temperature and under illumination. To continue improving the efficiency of CdTe/CdS solar cells, a good ohmic back contact with high work function and long term stability is needed. In this work, we report our studies on the potential of conducting polymer being used as the back contact of CdTe/CdS solar cells. Conducting polymers are good candidates because they have high work functions and high conductivities, are easy to process, and cost less, meeting all the requirements of a good ohmic back contact for CdTe. In our studies, we used poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) with different conductivities and compared them with traditional Cu-based back contact. It was observed that the CdTe solar cell performance improves as the conductivity of the PEDOT:PSS increase, and the efficiency (9.1%) is approaching those with traditional Cu/Au back contact (12.5%). Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact.

  2. Compensation mechanism of bromine dopants in cadmium telluride single crystals

    DOE PAGESBeta

    Bolotnikov, A. E.; Fochuk, P. M.; Verzhak, Ye. V.; Parashchuk, T. O.; Freik, D. M.; Panchuk, O. E.; James, R. B.; Gorichok, I. V.

    2015-01-02

    We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and themore » parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.« less

  3. Compensation mechanism of bromine dopants in cadmium telluride single crystals

    SciTech Connect

    Bolotnikov, A. E.; Fochuk, P. M.; Verzhak, Ye. V.; Parashchuk, T. O.; Freik, D. M.; Panchuk, O. E.; James, R. B.; Gorichok, I. V.

    2015-01-02

    We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and the parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.

  4. Health, safety and environmental issues relating to cadmium usage in photovoltaic energy systems

    SciTech Connect

    Moskowitz, P.D.; Fthenakis, V.M. ); Zweibel, K. )

    1989-12-01

    This paper discusses the current technology base and hazards associated with two promising thin-film photovoltaic cells that contain cadmium compounds -- cadmium telluride (CdTe) and copper indium diselenide (CuInSe{sub 2}). More specifically, this paper summarizes the toxicological information on cadmium (Cd) compounds; evaluates potential health, safety and environmental hazards associated with cadmium usage in the photovoltaics industry; describes regulatory requirements associated with the use, handling and disposal of cadmium compounds; and lists management options to permit the safe and continued use of these materials. Handling of cadmium in photovoltaic production can present hazards to health, safety and the environment. Prior recognition of these hazards can allow device manufacturers and regulators to implement appropriate and readily available hazard management strategies. Hazards associated with product use (i.e., array fires) and disposal remain controversial and partially unresolved. The most likely effects that could be expected would be those associated with chronic low-level exposures to cadmium wastes. Because of the general immobility of the cadmium present in these devices and availability of environmental and biomonitoring protocols, chronic hazards can be monitored, and remediated if necessary. Nevertheless, concern about cadmium hazards should continue to be emphasized to ensure that health, safety and environmental issues are properly managed. At the same time, the potential role that these systems can play in ameliorating some important health and environmental hazards related to other energy systems should not be ignored. 27 refs., 5 figs., 2 tabs.

  5. Varying cadmium telluride growth temperature during deposition to increase solar cell reliability

    DOEpatents

    Albin, David S.; Johnson, James Neil; Zhao, Yu; Korevaar, Bastiaan Arie

    2016-04-26

    A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.

  6. Induced Positron Annihiliation Investigation of Cadmium Zinc Telluride Crystal Microstructures

    SciTech Connect

    D. W. Akers

    2005-06-01

    Cadmium-Zinc-Telluride (CZT) crystals are used in semiconductor radiation detectors for the detection of x-ray and gamma radiation. However, production of detector grade crystals is difficult as small variations in compositional uniformity and primarily the zinc content can significantly affect the ability of the CZT crystal to function as a radiation detector. Currently there are no known nondestructive methods that can be used to identify detector grade crystals. The current test method is to fabricate and test the detector to determine if the crystal is sufficiently uniform and of the correct composition to be considered a detector grade crystal. Consequently, nondestructive detection methods are needed to identify detector grade crystals prior to the fabrication process. The purpose of this feasibility study was to perform a preliminary assessment of the ability of several new, nondestructive technologies based on Induced Positron Annihilation (IPA) to determine if detector grade CZT crystals can be identified. Results of measurements performed on specimens from Fisk University and EV Products, Inc. indicate that both the near surface Distributed Source Positron Annihilation (up to 3 mm penetration) and the volumetric Photon Induced Positron Annihilation methods may be suitable for determining CZT crystal quality. Further work on CZT crystals with a broader range of compositions and detector characteristics is needed to provide a well defined, calibrated, method for assessing CZT crystal quality.

  7. Preliminary uranium enrichment analysis results using cadmium zinc telluride detectors

    SciTech Connect

    Lavietes, A.D.; McQuaid, J.H.; Paulus, T.J.

    1995-09-08

    Lawrence Livermore National Laboratory (LLNL) and EG&G ORTEC have jointly developed a portable ambient-temperature detection system that can be used in a number of application scenarios. The detection system uses a planar cadmium zinc telluride (CZT) detector with custom-designed detector support electronics developed at LLNL and is based on the recently released MicroNOMAD multichannel analyzer (MCA) produced by ORTEC. Spectral analysis is performed using software developed at LLNL that was originally designed for use with high-purity germanium (HPGe) detector systems. In one application, the CZT detection system determines uranium enrichments ranging from less than 3% to over 75% to within accuracies of 20%. The analysis was performed using sample sizes of 200 g or larger and acquisition times of 30 min. The authors have demonstrated the capabilities of this system by analyzing the spectra gathered by the CZT detection system from uranium sources of several enrichments. These experiments demonstrate that current CZT detectors can, in some cases, approach performance criteria that were previously the exclusive domain of larger HPGe detector systems.

  8. A cadmium-zinc-telluride crystal array spectrometer

    SciTech Connect

    H. R. McHugh; W. Quam; T. DeVore; R. Vogle; J. Weslowski

    2003-09-01

    This paper describes a gamma detector employing an array of eight cadmium-zinc-telluride (CZT) crystals configured as a high resolution gamma ray spectrometer. This detector is part of a more complex instrument that identifies the isotope,displays this information, and records the gamma spectrum. Various alarms and other operator features are incorporated in this battery operated rugged instrument. The CZT detector is the key component of this instrument and will be described in detail in this paper. We have made extensive spectral measurements of the usual laboratory gamma sources, common medical isotopes, and various Special Nuclear Materials (SNM) with this detector. Some of these data will be presented as spectra. We will also present energy resolution and detection efficiency for the basic 8-crystal array. Additional data will also be presented for a 32-crystal array. The basic 8-crystal array development was completed two years ago, and the system electronic design has been imp roved recently. This has resulted in significantly improved noise performance. We expect to have a much smaller detector package, using 8 crystals, in a few months. This package will use flip-chip packaging to reduce the electronics physical size by a factor of 5.

  9. Development of a cadmium telluride pixel detector for astrophysical applications

    NASA Astrophysics Data System (ADS)

    Miyasaka, Hiromasa; Harrison, Fiona A.; Cook, Walter R.; Mao, Peter H.; Rana, Vikram R.; Ishikawa, Shin-Nosuke; Ushio, Masayoshi; Aono, Hiroyuki; Watanabe, Shin; Sato, Goro; Kokubun, Motohide; Takahashi, Tadayuki

    2009-08-01

    We are developing imaging Cadmium Telluride (CdTe) pixel detectors optimized for astrophysical hard X-ray applications. Our hybrid detector consist of a CdTe crystal 1mm thick and 2cm × 2cm in area with segmented anode contacts directly bonded to a custom low-noise application specific integrated circuit (ASIC). The CdTe sensor, fabricated by ACRORAD (Okinawa, Japan), has Schottky blocking contacts on a 605 micron pitch in a 32 × 32 array, providing low leakage current and enabling readout of the anode side. The detector is bonded using epoxy-gold stud interconnects to a custom low noise, low power ASIC circuit developed by Caltech's Space Radiation Laboratory. We have achieved very good energy resolution over a wide energy range (0.62keV FWHM @ 60keV, 10.8keV FWHM @ 662keV). We observe polarization effects at room temperature, but they are suppressed if we operate the detector at or below 0°C degree. These detectors have potential application for future missions such as the International X-ray Observatory (IXO).

  10. Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

    DOEpatents

    McQuaid, James H.; Lavietes, Anthony D.

    1998-05-29

    A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radio nuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components.

  11. Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

    DOEpatents

    McQuaid, J.H.; Lavietes, A.D.

    1998-05-26

    A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector is disclosed. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radionuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components. 9 figs.

  12. Using atomistic simulations to model cadmium telluride thin film growth.

    PubMed

    Yu, Miao; Kenny, Steven D

    2016-03-16

    Cadmium telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to conduct research on how defects are formed during the growth process, since defects lower the efficiency of solar cells. In this work we use computer simulation to predict the growth of a sputter deposited CdTe thin film. On-the-fly kinetic Monte Carlo technique is used to simulate the CdTe thin film growth on the (1 1 1) surfaces. The results show that on the (1 1 1) surfaces the growth mechanisms on surfaces which are terminated by Cd or Te are quite different, regardless of the deposition energy (0.1~10 eV). On the Te-terminated (1 1 1) surface the deposited clusters first form a single mixed species layer, then the Te atoms in the mixed layer moved up to form a new layer. Whilst on the Cd-terminated (1 1 1) surface the new Cd and Te layers are formed at the same time. Such differences are probably caused by stronger bonding between ad-atoms and surface atoms on the Te layer than on the Cd layer. PMID:26881827

  13. Using atomistic simulations to model cadmium telluride thin film growth

    NASA Astrophysics Data System (ADS)

    Yu, Miao; Kenny, Steven D.

    2016-03-01

    Cadmium telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to conduct research on how defects are formed during the growth process, since defects lower the efficiency of solar cells. In this work we use computer simulation to predict the growth of a sputter deposited CdTe thin film. On-the-fly kinetic Monte Carlo technique is used to simulate the CdTe thin film growth on the (1 1 1) surfaces. The results show that on the (1 1 1) surfaces the growth mechanisms on surfaces which are terminated by Cd or Te are quite different, regardless of the deposition energy (0.1∼ 10 eV). On the Te-terminated (1 1 1) surface the deposited clusters first form a single mixed species layer, then the Te atoms in the mixed layer moved up to form a new layer. Whilst on the Cd-terminated (1 1 1) surface the new Cd and Te layers are formed at the same time. Such differences are probably caused by stronger bonding between ad-atoms and surface atoms on the Te layer than on the Cd layer.

  14. Vapor crystal growth technology development: Application to cadmium telluride

    NASA Technical Reports Server (NTRS)

    Rosenberger, Franz; Banish, Michael; Duval, Walter M. B.

    1991-01-01

    Growth of bulk crystals by physical vapor transport was developed and applied to cadmium telluride. The technology makes use of effusive ampoules, in which part of the vapor contents escapes to a vacuum shroud through defined leaks during the growth process. This approach has the advantage over traditional sealed ampoule techniques that impurity vapors and excess vapor constituents are continuously removed from the vicinity of the growing crystal. Thus, growth rates are obtained routinely at magnitudes that are rather difficult to achieve in closed ampoules. Other advantages of this effusive ampoule physical vapor transport (EAPVT) technique include the predetermination of transport rates based on simple fluid dynamics and engineering considerations, and the growth of the crystal from close to congruent vapors, which largely alleviates the compositional nonuniformities resulting from buoyancy driven convective transport. After concisely reviewing earlier work on improving transport rates, nucleation control, and minimization of crystal wall interactions in vapor crystal growth, a detail account is given of the largely computer controlled EAPVT experimentation.

  15. Cadmium telluride (CdTe) and cadmium selenide (CdSe) leaching behavior and surface chemistry in response to pH and O2.

    PubMed

    Zeng, Chao; Ramos-Ruiz, Adriana; Field, Jim A; Sierra-Alvarez, Reyes

    2015-05-01

    Cadmium telluride (CdTe) and cadmium selenide (CdSe) are increasingly being applied in photovoltaic solar cells and electronic components. A major concern is the public health and ecological risks associated with the potential release of toxic cadmium, tellurium, and/or selenium species. In this study, different tests were applied to investigate the leaching behavior of CdTe and CdSe in solutions simulating landfill leachate. CdTe showed a comparatively high leaching potential. In the Toxicity Characteristic Leaching Procedure (TCLP) and Waste Extraction Test (WET), the concentrations of cadmium released from CdTe were about 1500 and 260 times higher than the regulatory limit (1 mg/L). In contrast, CdSe was relatively stable and dissolved selenium in both leaching tests was below the regulatory limit (1 mg/L). Nonetheless, the regulatory limit for cadmium was exceeded by 5- to 6- fold in both tests. Experiments performed under different pH and redox conditions confirmed a marked enhancement in CdTe and CdSe dissolution both at acidic pH and under aerobic conditions. These findings are in agreement with thermodynamic predictions. Taken as a whole, the results indicate that recycling of decommissioned CdTe-containing devices is desirable to prevent the potential environmental release of toxic cadmium and tellurium in municipal landfills. PMID:25710599

  16. Health, safety and environmental issues relating to cadmium usage in photovoltaic energy systems

    SciTech Connect

    Moskowitz, P.D.; Fthenakis, V.M. ); Zweibel, K. )

    1990-01-01

    This paper discusses the current technology base and hazards associated with two promising thin-film photovoltaic cells that contain cadmium compounds--cadmium telluride (CdTe) and copper indium deselenide (CuInSe{sub 2}). More specifically, this paper summarized the toxicological information on cadmium (Cd) compounds;evaluates potential health, safety and environmental hazards associated with cadmium usage in the photovoltaics industry; describes regulatory requirements associated with the use, handling and disposal of cadmium compounds; and lists management options to permit the safe and continued use of these materials. Handling of cadmium in photovoltaic production can present hazards to health, safety and the environment. Prior recognition of these hazards can allow device manufacturers and regulators to implement appropriate and readily available hazard management strategies. Hazards associated with product use (i.e., array fires) and disposal remain controversial and partially unresolved. The most likely effects that could be expected would be those associated with chronic low-level exposures to cadmium wastes. Because of the general immobility of the cadmium present in these devices and availability of environmental and biomonitoring protocols, chronic hazards can be monitored, and remediated if necessary. 26 refs., 5 figs., 2 tabs.

  17. Directional Solidification of Mercury Cadmium Telluride in Microgravity

    NASA Technical Reports Server (NTRS)

    Lechoczhy, Sandor L.; Gillies, Donald C.; Szofran, Frank R.; Watring, Dale A.

    1998-01-01

    Mercury cadmium telluride (MCT) has been directionally solidified for ten days in the Advanced Automated Directional Solidification Furnace (AADSF) on the second United States Microgravity Payload Mission (USMP-2). A second growth experiment is planned for the USMP-4 mission in November 1997. Results from USMP-2 demonstrated significant changes between microgravity and ground-based experiments, particularly in the compositional homogeneity. Changes were also observed during the microgravity mission which were dependent on the attitude of the space shuttle and the relative magnitudes of axial and transverse residual accelerations with respect to the growth axis of the crystal. Issues of shuttle operation, especially those concerned with safety and navigation, and the science needs of other payloads dictated the need for changes in attitude. One consequence for solidification of MCT in the USMP4 mission is the desire for a shorter growth time to complete the experiment without subjecting the sample to shuttle maneuvers. By using a seeded technique and a pre-processed boule of MCT with an established diffusion layer quenched into the solid, equilibrium steady state growth can be established within 24 hours, rather than the three days needed in USMP-2. The growth of MCT in AADSF during the USMP-4 mission has been planned to take less than 72 hours with 48 hours of actual growth time. A review of the USMP-2 results will be presented, and the rationale for the USMP-4 explained. Pre-mission ground based tests for the USN4P-4 mission will be presented, as will any available preliminary flight results from the mission.

  18. Cadmium zinc telluride detector for low photon energy applications

    NASA Astrophysics Data System (ADS)

    Shin, Kyung-Wook; Wang, Kai; Reznic, Alla; Karim, Karim S.

    2010-04-01

    Cadmium Zinc Telluride (CdZnTe or CZT) is a polycrystalline radiation detector that has been investigated over the years for a variety of applications including Constellation X-ray space mission [1] and direct-conversion medical imaging such as digital mammography [2]. Due to its high conversion gain and low electron-hole pair creation energy (~4.43 eV) [3], it has found use in high end, photon counting medical imaging applications including positron emission tomography (PET), computed tomography (CT) and single photon emission computed tomography (SPECT). However, its potential in low photon energy applications has not been fully explored. In this work, we explore the capacity of the CZT material to count low photon energies (6 keV - 20 keV). These energies are of direct relevance to applications in gamma ray breast brachytheraphy and mammography, X-ray protein crystallography, X-ray mammography and mammography tomosynthesis. We also present a design that integrates the CZT direct conversion detector with an inhouse fabricated amorphous silicon (a-Si:H) thin film transistor (TFT) passive pixel sensor (PPS) array. A CZT photoconductor (2 cm x 2 cm size, 5-mm-thick) prepared by the traveling heat method (THM) from RedlenTM is characterized. The current-voltage characteristics reveal a resistivity of 3.3 x 1011 Ω•cm and a steady state dark current in the range of nA. Photocurrent transients under different biases and illumination pulses are studied to investigate photogeneration and the charge trapping process. It is found that charge trapping plays a more significant role in transient behavior at low biases and low frequency.

  19. INSTRUMENTS AND METHODS OF INVESTIGATION: Cadmium mercury telluride and the new generation of photoelectronic devices

    NASA Astrophysics Data System (ADS)

    Ponomarenko, Vladimir P.

    2003-06-01

    This paper is a 1969-2002 progress report on the development of solid semiconductor solutions of cadmium-mercury tellurides (single crystals and epitaxial layers) as well as of infrared photodetectors based on them (photoresistors and photodiodes, including the array variety).

  20. Study of Photo-Conductivity in Nano-Crystalline Cadmium Telluride Thin Films

    SciTech Connect

    Mahesha, M. G.; Bangera, Kasturi V.; Shivakumar, G. K.

    2011-07-15

    Nano crystallite thin films of Cadmium Telluride have been grown on glass substrates by thermal evaporation under vacuum. The growth conditions to get stoichiometric films of the compound have been optimized. The effect of substrate temperature and annealing on photosensitivity has been investigated. Also the effect of deposition parameters and post deposition annealing on rise time and decay time have been studied in detail.

  1. Growth of Cadmium-Zinc Telluride Crystals by Controlled Seeding Contactless Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Palosz, W.; Grasza, K.; Gillies, D.; Jerman, G.

    1996-01-01

    Bulk crystals of cadmium-zinc telluride, 23 mm in diameter and up to 45 grams in weight were grown. Controlled seed formation procedure was used to limit the number of grains in the crystal. Most uniform distribution of ZnTe in the crystals was obtained using excess (Cd + Zn) pressure in the ampoule.

  2. Structure and dynamics of cadmium telluride studied by x-ray and inelastic neutron scattering

    SciTech Connect

    Niedziela, Jennifer L; Stone, Matthew B

    2014-01-01

    We present a combined study of density functional theory, x-ray diffraction, and inelastic neutron scattering examining the temperature dependent structure and lattice dynamics of commercially available cadmium telluride. A subtle change in the structure is evinced near 80~K, which manifests also in the measured phonon density of states. There is no change to the long-range ordered structure. The implications of the change in relation to structural defects are discussed.

  3. Structure and dynamics of cadmium telluride studied by x-ray and inelastic neutron scattering

    SciTech Connect

    Niedziela, J. L.; Stone, M. B.

    2014-09-08

    We present a combined study of density functional theory, x-ray diffraction, and inelastic neutron scattering examining the temperature dependent structure and lattice dynamics of commercially available cadmium telluride. A subtle change in the structure is evinced near 80 K, which manifests also in the measured phonon density of states. There is no change to the long-range ordered structure. The implications of the change in relation to structural defects are discussed.

  4. Recycling of cadmium and selenium from photovoltaic modules and manufacturing wastes

    SciTech Connect

    Moskowitz, P.D.; Zweibel, K.

    1992-01-01

    Since the development of the first silicon based photovoltaic cell in the 1950's, large advances have been made in photovoltaic material and processing options. At present there is growing interest in the commercial potential of cadmium telluride (CdTe) and copper indium diselenide (CIS) photovoltaic modules. As the commercial potential of these technologies becomes more apparent, interest in the environmental, health and safety issues associated with their production, use and disposal has also increased because of the continuing regulatory focus on cadmium and selenium. In future, recycling of spent or broken CdTe and CIS modules and manufacturing wastes may be needed for environmental, economic or political reasons. To assist industry to identify recycling options early in the commercialization process, a Workshop was convened. At this Workshop, representatives from the photovoltaic, electric utility, and nonferrous metals industries met to explore technical and institutional options for the recycling of spent CdTe and CIS modules and manufacturing wastes. This report summarizes the results of the Workshop. This report includes: (1) A discussion of the Resource Conservation and Recovery Act regulations and their potential implications to the photovoltaic industry; (2) an assessment of the needs of the photovoltaic industry from the perspective of module manufacturers and consumers; (3) an overview of recycling technologies now employed by other industries for similar types of materials; and, (4) a list of recommendation.

  5. Recycling of cadmium and selenium from photovoltaic modules and manufacturing wastes. A workshop report

    SciTech Connect

    Moskowitz, P.D.; Zweibel, K.

    1992-10-01

    Since the development of the first silicon based photovoltaic cell in the 1950`s, large advances have been made in photovoltaic material and processing options. At present there is growing interest in the commercial potential of cadmium telluride (CdTe) and copper indium diselenide (CIS) photovoltaic modules. As the commercial potential of these technologies becomes more apparent, interest in the environmental, health and safety issues associated with their production, use and disposal has also increased because of the continuing regulatory focus on cadmium and selenium. In future, recycling of spent or broken CdTe and CIS modules and manufacturing wastes may be needed for environmental, economic or political reasons. To assist industry to identify recycling options early in the commercialization process, a Workshop was convened. At this Workshop, representatives from the photovoltaic, electric utility, and nonferrous metals industries met to explore technical and institutional options for the recycling of spent CdTe and CIS modules and manufacturing wastes. This report summarizes the results of the Workshop. This report includes: (1) A discussion of the Resource Conservation and Recovery Act regulations and their potential implications to the photovoltaic industry; (2) an assessment of the needs of the photovoltaic industry from the perspective of module manufacturers and consumers; (3) an overview of recycling technologies now employed by other industries for similar types of materials; and, (4) a list of recommendation.

  6. The effect of different annealing temperatures on tin and cadmium telluride phases obtained by a modified chemical route

    SciTech Connect

    Mesquita, Anderson Fuzer; Porto, Arilza de Oliveira; Magela de Lima, Geraldo; Paniago, Roberto; Ardisson, José Domingos

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ► Synthesis of cadmium and tin telluride. ► Chemical route to obtain pure crystalline cadmium and tin telluride. ► Effect of the annealing temperature on the crystalline phases. ► Removal of tin oxide as side product through thermal treatment. -- Abstract: In this work tin and cadmium telluride were prepared by a modification of a chemical route reported in the literature to obtain metallacycles formed by oxidative addition of tin-tellurium bonds to platinum (II). Through this procedure it was possible to obtain tin and cadmium telluride. X-ray diffraction and X-ray photoelectron spectroscopy were used to identify the crystalline phases obtained as well as the presence of side products. In the case of tin telluride it was identified potassium chloride, metallic tellurium and tin oxide as contaminants. The tin oxidation states were also monitored by {sup 119}Sn Mössbauer spectroscopy. The annealing in hydrogen atmosphere was chosen as a strategy to reduce the tin oxide and promote its reaction with the excess of tellurium present in the medium. The evolution of this tin oxide phase was studied through the annealing of the sample at different temperatures. Cadmium telluride was obtained with high degree of purity (98.5% relative weight fraction) according to the Rietveld refinement of X-ray diffraction data. The modified procedure showed to be very effective to obtain amorphous tin and cadmium telluride and the annealing at 450 °C has proven to be useful to reduce the amount of oxide produced as side product.

  7. Cadmium telluride solar cells: Record-breaking voltages

    SciTech Connect

    Poplawsky, Jonathan D.

    2016-01-01

    Here, the performance of CdTe solar cells — cheaper alternatives to silicon photovoltaics — is hampered by their low output voltages, which are normally well below the theoretical limit. Now, record voltages of over 1 V have been reported in single-crystal CdTe heterostructure solar cells, which are close to those of benchmark GaAs cells.

  8. Cadmium telluride solar cells: Record-breaking voltages

    NASA Astrophysics Data System (ADS)

    Poplawsky, Jonathan D.

    2016-03-01

    The performance of CdTe solar cells — cheaper alternatives to silicon photovoltaics — is hampered by their low output voltages, which are normally well below the theoretical limit. Now, record voltages of over 1 V have been reported in single-crystal CdTe heterostructure solar cells, which are close to those of benchmark GaAs cells.

  9. Effects of a traveling magnetic field on vertical gradient freeze growth of cadmium zinc telluride

    NASA Astrophysics Data System (ADS)

    Yeckel, Andrew; Derby, Jeffrey J.

    2011-09-01

    The effects of a traveling magnetic field (TMF) on vertical gradient freeze (VGF) growth of cadmium zinc telluride (CZT) are studied using a coupled model of magnetic induction, fluid dynamics, and heat transfer. Simulations are performed to determine the influences of current and frequency on melt flow and growth interface shape. A downward traveling electromagnetic wave drives flow downward at the wall, which tends to flatten the interface, whereas an upward traveling wave has the opposite effect. TMF makes a significant impact on interface shape in the absence of thermal buoyancy, but is ineffectual under realistic conditions in a 4 inch diameter ampoule, for which buoyancy dominates Lorentz force throughout the melt.

  10. Advanced methods for preparation and characterization of infrared detector materials. [mercury cadmium telluride alloys

    NASA Technical Reports Server (NTRS)

    Lehoczky, S. L.; Szofran, F. R.

    1981-01-01

    Differential thermal analysis data were obtained on mercury cadmium telluride alloys in order to establish the liquidus temperatures for the various alloy compositions. Preliminary theoretical analyses was performed to establish the ternary phase equilibrium parameters for the metal rich region of the phase diagram. Liquid-solid equilibrium parameters were determined for the pseudobinary alloy system. Phase equilibrium was calculated and Hg(l-x) Cd(x) Te alloys were directionally solidified from pseudobinary melts. Electrical resistivity and Hall coefficient measurements were obtained.

  11. Ion Microbeam Studies of Cadmium Zinc Telluride Radiation Detectors by IBICC

    SciTech Connect

    Brunett, B.A.; Doyle, B.L.; James, R.B.; Olsen, R.W.; Vizkelethy, G.; Walsh, D.S.

    1998-10-26

    Ion Beam Induced Charge Collection (IBICC) and Time Resolved IBICC (TRIBICC) techniques were e for imaging electronic properties of Cadmium Zinc Telluride (CZT) room temperature radiation detectors. The detectors were bombarded with a scanned 5.4 MeV He microbeam and the detector response was analyzed at each point. The electron mobility (A) and Metime (z.), and charge collection efficiency maps were calculated from the data. In order to determine the radiation damage to the detectors, the signal deteriomtion was measured as the function of dose.

  12. Large-volume high-resolution cadmium zinc telluride radiation detectors: recent developments

    NASA Astrophysics Data System (ADS)

    Chen, H.; Awadalla, S. A.; Iniewski, K.; Lu, P. H.; Harris, F.; Mackenzie, J.; Hasanen, T.; Chen, W.; Redden, R.; Bindley, G.; Kuvvetli, Irfan; Budtz-Jørgensen, Carl; Luke, P.; Amman, M.; Lee, J. S.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; James, R. B.

    2007-09-01

    The excellent room temperature spectral performance of cadmium zinc telluride detectors grown via the Traveling Heater Method (THM) makes this approach suitable for the mass deployment of radiation detectors for applications in homeland security and medical imaging. This paper reports our progress in fabricating thicker and larger area detectors from THM grown CZT. We discuss the performance of such 20x20x10 mm 3, and 10x10x10 mm 3 monolithic pixellated detectors and virtual Frisch-Grid 4x4x12 mm3 devices, and describe the various physical properties of the materials.

  13. Seeded Physical Vapor Transport of Cadmium-Zinc Telluride Crystals: Growth and Characterization

    NASA Technical Reports Server (NTRS)

    Palosz, W.; George, M. A.; Collins, E. E.; Chen, K.-T.; Zhang, Y.; Burger, A.

    1997-01-01

    Crystals of Cd(1-x)Zn(x)Te with x = 0.2 and 40 g in weight were grown on monocrystalline cadmium-zinc telluride seeds by closed-ampoule physical vapor transport with or without excess (Cd + Zn) in the vapor phase. Two post-growth cool-down rates were used. The crystals were characterized using low temperature photoluminescence, atomic force microscopy, chemical etching, X-ray diffraction and electrical measurements. No formation of a second, ZnTe-rich phase was observed.

  14. Observation of defects in mercury cadmium telluride crystals grown by chemical vapor transport

    NASA Technical Reports Server (NTRS)

    Irene, E. A.; Tierney, E.; Wiedemeier, H.; Chandra, D.

    1983-01-01

    A mixture of nitric and hydrochloric acids was found to yield etch pits on mercury cadmium telluride crystals grown by chemical vapor transport using iodine or mercuric iodide as the transport agent. Two types of pits were observed by optical microscopy: triangular pyramidal and round saucer shaped pits. Transmission electron microscopy confirmed that two types of defects were present: dislocations and second phase occlusions. The present study suggests that the defects are near the crystal surface and therefore will probably not significantly affect the electrical characteristics.

  15. Specific features of the photoconductivity of semi-insulating cadmium telluride

    SciTech Connect

    Golubyatnikov, V. A.; Grigor’ev, F. I.; Lysenko, A. P. Strogankova, N. I.; Shadov, M. B.; Belov, A. G.

    2014-12-15

    The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

  16. Anomalous segregation during electrodynamic gradient freeze growth of cadmium zinc telluride

    NASA Astrophysics Data System (ADS)

    Zhang, Nan; Yeckel, Andrew; Burger, Arnold; Cui, Yunlong; Lynn, Kelvin G.; Derby, Jeffrey J.

    2011-06-01

    A transient, coupled model has been developed to analyze the segregation of zinc in cadmium zinc telluride (CZT) grown in an electrodynamic gradient freeze (EDG) furnace. The coupled model consists of a local model that solves for time-dependent melt flow, heat transfer, melt-crystal interface position, and zinc distribution in both melt and solid phases and a quasi-steady-state global model that features realistic furnace heat transfer. After verification and validation tests, the model is applied to predict composition patterns in a large-scale CZT EDG growth system previously analyzed by Gasperino et al. [On crucible effects during the growth of cadmium zinc telluride in an electrodynamic gradient freeze furnace, J. Crys. Growth 311 (2009) 2327-2335]. Surprisingly, anomalous zinc segregation is predicted, featuring a non-monotonic axial concentration profile and several local minima and maxima across the boule. A mechanistic explanation is put forth based on the cumulative effect of changes in multi-cellular melt flow structures, a particularly susceptible occurrence for CZT systems. Additional effects of furnace translation rate and solid state diffusion are probed.

  17. Cadmium Telluride Solar Cells on Ultrathin Glass for Space Applications

    NASA Astrophysics Data System (ADS)

    Irvine, S. J. C.; Lamb, D. A.; Clayton, A. J.; Kartopu, G.; Barrioz, V.

    2014-08-01

    This paper details the preliminary findings of a study to achieve a durable thin-film CdTe photovoltaic (PV) device structure on ultrathin space-qualified cover glass. An aluminum-doped zinc oxide (AZO) transparent conducting oxide was deposited directly onto the cover glass using metalorganic chemical vapor deposition (MOCVD). The AZO demonstrated low sheet resistance of 10 Ω/□ and high optical transparency of 85% as well as excellent adherence and environmental stability. Preliminary deposition of PV layers onto the AZO on cover glass, by MOCVD, showed the possibility of such a structure, yielding a device conversion efficiency of 7.2%. High series resistance (10 Ω cm2) and low V oc (586 mV) were identified as the limiting factors when compared with the authors' platform process on indium tin oxide-coated aluminosilicate. The coverage of the Cd1- x Zn x S window layer along with the front contacting of the device were shown to be the major causes of the low efficiency. Further deposition of AZO/CdTe employing an oxygen plasma cleaning step to the cover glass and evaporated gold front contacts significantly improved the device performance. With a highest conversion efficiency of 10.2%, series resistance improved to 4.4 Ω cm2, open-circuit voltage ( V oc) up to 667 mV, and good adhesion, this represents the first demonstration of direct deposition of CdTe solar cells onto 100- μm-thick space-qualified cover glass.

  18. Synthesis of cadmium telluride quantum wires and the similarity of their band gaps to those of equidiameter cadmium telluride quantum dots

    SciTech Connect

    Wang, Lin-Wang; Sun, Jianwei; Wang, Lin-Wang; Buhro, William E.

    2008-07-11

    High-quality colloidal CdTe quantum wires having purposefully controlled diameters in the range of 5-11 nm are grown by the solution-liquid-solid (SLS) method, using Bi-nanoparticle catalysts, cadmium octadecylphosphonate and trioctylphosphine telluride as precursors, and a TOPO solvent. The wires adopt the wurtzite structure, and grow along the [002] direction (parallel to the c axis). The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to the experimental results for high-quality CdTe quantum dots. In contrast to the predictions of an effective-mass approximation, particle-in-a-box model, and previous experimental results from CdSe and InP dot-wire comparisons, the band gaps of CdTe dots and wires of like diameter are found to be experimentally indistinguishable. The present results are analyzed using density functional theory under the local-density approximation by implementing a charge-patching method. The higher-level theoretical analysis finds the general existence of a threshold diameter, above which dot and wire band gaps converge. The origin and magnitude of this threshold diameter is discussed.

  19. Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride

    SciTech Connect

    Albin, D. S. Kuciauskas, D.; Ma, J.; Metzger, W. K.; Burst, J. M.; Moutinho, H. R.; Dippo, P. C.

    2014-03-03

    Low-temperature photoluminescence emission spectra were measured in cadmium telluride (CdTe) samples in which composition was varied to promote either Cd or Te-rich stoichiometry. The ability to monitor stoichiometry is important, since it has been shown to impact carrier recombination. Te-rich samples show transitions corresponding to acceptor-bound excitons (∼1.58 eV) and free-electron to acceptor transitions (∼1.547 eV). In addition to acceptor-bound excitons, Cd-rich samples show transitions assigned to donor-bound excitons (1.591 eV) and Te vacancies at 1.552 eV. Photoluminescence is a noninvasive way to monitor stoichiometric shifts induced by post-deposition anneals in polycrystalline CdTe thin films deposited by close-spaced sublimation.

  20. Three-dimensional imperfections in a model vertical Bridgman growth system for cadmium zinc telluride

    NASA Astrophysics Data System (ADS)

    Yeckel, Andrew; Compère, Geoffrey; Pandy, Arun; Derby, Jeffrey J.

    2004-03-01

    Three-dimensional, quasi-steady-state modeling of heat transfer, flow, and segregation are carried out with a self-consistent, parallel, finite element model to analyze the effects of imperfections on a model system for the vertical Bridgman growth of cadmium zinc telluride. Even small amounts of ampoule tilting (defined as the offset between the ampoule axis from the direction of gravity) produce large asymmetries in the flow and solute segregation. However, the application of ampoule rotation, at rates far smaller than considered in prior studies, acts to restore axisymmetric segregation behavior. Thermal imperfections caused by ampoule offset in the furnace bore and ampoule distortion are also shown to yield significant three-dimensional flows and segregation asymmetry. Local heating is shown to strongly affect solute mixing and may be effective in active strategies for segregation control.

  1. Decreasing lateral segregation in cadmium zinc telluride via ampoule tilting during vertical Bridgman growth

    NASA Astrophysics Data System (ADS)

    Lun, Lisa; Yeckel, Andrew; Daoutidis, Prodromos; Derby, Jeffrey J.

    2006-06-01

    We employ a 2D, planar computational model to study the effects of ampoule tilting on zinc segregation during the growth of cadmium zinc telluride in a low-gradient vertical Bridgman process. Tilting the axis of the ampoule away from the direction of gravity strongly affects the structure and strength of melt convection, which, in turn, modifies heat transfer and the shape of the solid-liquid interface. While these effects have relatively little direct effect on axial segregation, the pattern of lateral segregation is significantly changed by tilting. Optimal tilt angles are found that locally flatten lateral compositional profiles and that decrease a measure of overall segregation, compared to the case of growth in a perfectly vertical ampoule.

  2. Modeling and Characterization of MTF and Spectral Response at Small Pitch on Mercury Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Berthoz, J.; Grille, R.; Rubaldo, L.; Gravrand, O.; Kerlain, A.; Pere-Laperne, N.; Martineau, L.; Chabuel, F.; Leclercq, D.

    2015-09-01

    Space applications are challenging infrared (IR) technologies, demanding the best system performance achievable. This requires covering the entire IR spectrum from short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) for various pixel sizes, which is possible thanks to a well-mastered mercury cadmium telluride technology. Because of its adjustable gap, it can be operated in all the IR bands. Nevertheless, technology optimization requires deep understanding of physical mechanisms. This paper presents computations by finite-element modeling of two aspects of electrooptical performance: spectral response and modulation transfer function (MTF). Computations and characterizations for all IR bands demonstrate the accuracy of our simulations and the state-of-the-art nature of our technology, which performs according to theory. This paper also highlights the capability to measure MTF at very small pitch (10 μm) by a nondestructive method.

  3. Sign reversal of dielectric anisotropy of ferroelectric liquid crystals doped with cadmium telluride quantum dots

    NASA Astrophysics Data System (ADS)

    Kumar, A.; Silotia, P.; Biradar, A. M.

    2011-08-01

    A small amount of cadmium telluride quantum dots (CdTe QDs) has been doped into various ferroelectric liquid crystals (FLCs) to observe the modifications in the alignment and dielectric anisotropy (Δɛ) of the composites. The CdTe QDs have induced a uniform homeotropic (HMT) alignment in most of the FLC mixtures. We observed an unexpected switching (from HMT to homogeneous configuration) of CdTe QDs doped FLC CS1026 (having positive Δɛ) by the application of high dc bias. This reverse switching has been attributed to the interaction between FLC molecules and CdTe QDs which caused the sign reversal of Δɛ of FLC CS1026.

  4. Time resolved photo-luminescent decay characterization of mercury cadmium telluride focal plane arrays

    DOE PAGESBeta

    Soehnel, Grant

    2015-01-20

    The minority carrier lifetime is a measurable material property that is an indication of infrared detector device performance. To study the utility of measuring the carrier lifetime, an experiment has been constructed that can time resolve the photo-luminescent decay of a detector or wafer sample housed inside a liquid nitrogen cooled Dewar. Motorized stages allow the measurement to be scanned over the sample surface, and spatial resolutions as low as 50µm have been demonstrated. A carrier recombination simulation was developed to analyze the experimental data. Results from measurements performed on 4 mercury cadmium telluride focal plane arrays show strong correlationmore » between spatial maps of the lifetime, dark current, and relative response.« less

  5. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect

    Seo, Won-Oh; Kim, Jihyun; Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol; Kim, Donghwan

    2014-08-25

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2 MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  6. Correlation Between Bulk Material Defects and Spectroscopic Response in Cadmium Zinc Telluride Detectors

    NASA Technical Reports Server (NTRS)

    Parker, Bradford H.; Stahle, C. M.; Barthelmy, S. D.; Parsons, A. M.; Tueller, J.; VanSant, J. T.; Munoz, B. F.; Snodgrass, S. J.; Mullinix, R. E.

    1999-01-01

    One of the critical challenges for large area cadmium zinc telluride (CdZnTe) detector arrays is obtaining material capable of uniform imaging and spectroscopic response. Two complementary nondestructive techniques for characterizing bulk CdZnTe have been developed to identify material with a uniform response. The first technique, infrared transmission imaging, allows for rapid visualization of bulk defects. The second technique, x-ray spectral mapping, provides a map of the material spectroscopic response when it is configured as a planar detector. The two techniques have been used to develop a correlation between bulk defect type and detector performance. The correlation allows for the use of infrared imaging to rapidly develop wafer mining maps. The mining of material free of detrimental defects has the potential to dramatically increase the yield and quality of large area CdZnTe detector arrays.

  7. Charge Sharing and Charge Loss in a Cadmium-Zinc-Telluride Fine-Pixel Detector Array

    NASA Technical Reports Server (NTRS)

    Gaskin, J. A.; Sharma, D. P.; Ramsey, B. D.; Six, N. Frank (Technical Monitor)

    2002-01-01

    Because of its high atomic number, room temperature operation, low noise, and high spatial resolution a Cadmium-Zinc-Telluride (CZT) multi-pixel detector is ideal for hard x-ray astrophysical observation. As part of on-going research at MSFC (Marshall Space Flight Center) to develop multi-pixel CdZnTe detectors for this purpose, we have measured charge sharing and charge loss for a 4x4 (750micron pitch), lmm thick pixel array and modeled these results using a Monte-Carlo simulation. This model was then used to predict the amount of charge sharing for a much finer pixel array (with a 300micron pitch). Future work will enable us to compare the simulated results for the finer array to measured values.

  8. Characterization of a 2-mm thick, 16x16 Cadmium-Zinc-Telluride Pixel Array

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Richardson, Georgia; Mitchell, Shannon; Ramsey, Brian; Seller, Paul; Sharma, Dharma

    2003-01-01

    The detector under study is a 2-mm-thick, 16x16 Cadmium-Zinc-Telluride pixel array with a pixel pitch of 300 microns and inter-pixel gap of 50 microns. This detector is a precursor to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation. In addition, we discuss electric field modeling for this specific detector geometry and the role this mapping will play in terms of charge sharing and charge loss in the detector.

  9. Internal Electric Field Behavior of Cadmium Zinc Telluride Radiation Detectors Under High Carrier Injection

    SciTech Connect

    Yang, G.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.H.; Gul, R.; and James, R.B.

    2010-10-26

    The behavior of the internal electric-field of nuclear-radiation detectors substantially affects the detector's performance. We investigated the distribution of the internal field in cadmium zinc telluride (CZT) detectors under high carrier injection. We noted the build-up of a space charge region near the cathode that produces a built-in field opposing the applied field. Its presence entails the collapse of the electric field in the rest of detector, other than the portion near the cathode. Such a space-charge region originates from serious hole-trapping in CZT. The device's operating temperature greatly affects the width of the space-charge region. With increasing temperature from 5 C to 35 C, its width expanded from about 1/6 to 1/2 of the total depth of the detector.

  10. First experience DaTSCAN imaging using cadmium-zinc-telluride gamma camera SPECT.

    PubMed

    Farid, Karim; Queneau, Mathieu; Guernou, Mohamed; Lussato, David; Poullias, Xavier; Petras, Slavomir; Caillat-Vigneron, Nadine; Songy, Bernard

    2012-08-01

    We report our first experience of brain DaTSCAN SPECT imaging using cadmium-zinc-telluride gamma camera (CZT-GC) in 2 cases: a 64-year-old patient suffering from essential tremor and a 73-year-old patient presenting with atypical bilateral extrapyramidal syndrome. In both cases, 2 different acquisitions were performed and compared, using a double-head Anger-GC, followed immediately by a second acquisition on CZT-GC. There were no significant visual differences between images generated by different GC. Our first result suggests that DaTSCAN SPECT is feasible on CZT-GC, allowing both injected dose and acquisition time reductions without compromising image quality. This experience needs to be evaluated in larger series. PMID:22785531

  11. The use of cadmium telluride detectors for the qualitative analysis of diagnostic x-ray spectra.

    PubMed

    Di Castro, E; Pani, R; Pellegrini, R; Bacci, C

    1984-09-01

    A method is introduced for the evaluation of x-ray spectra from x-ray machines operating in the range 50-100 kVp using a cadmium telluride (CdTe) detector with low detection efficiency. The pulse height distribution obtained with this kind of detector does not represent the true photon spectra owing to the presence of K-escape, Compton scattering, etc.; these effects were evaluated using a Monte Carlo method. A stripping procedure is described for implementation on a Univac 1100/82 computer. The validity of our method was finally tested by comparison with experimental results obtained with a Ge detector and with data from the literature; the results are in good agreement with published data. PMID:6483976

  12. Time resolved photo-luminescent decay characterization of mercury cadmium telluride focal plane arrays

    SciTech Connect

    Soehnel, Grant

    2015-01-20

    The minority carrier lifetime is a measurable material property that is an indication of infrared detector device performance. To study the utility of measuring the carrier lifetime, an experiment has been constructed that can time resolve the photo-luminescent decay of a detector or wafer sample housed inside a liquid nitrogen cooled Dewar. Motorized stages allow the measurement to be scanned over the sample surface, and spatial resolutions as low as 50µm have been demonstrated. A carrier recombination simulation was developed to analyze the experimental data. Results from measurements performed on 4 mercury cadmium telluride focal plane arrays show strong correlation between spatial maps of the lifetime, dark current, and relative response.

  13. Fluorescent cadmium telluride quantum dots embedded chitosan nanoparticles: a stable, biocompatible preparation for bio-imaging.

    PubMed

    Ghormade, Vandana; Gholap, Haribhau; Kale, Sonia; Kulkarni, Vaishnavi; Bhat, Suresh; Paknikar, Kishore

    2015-01-01

    Fluorescent cadmium telluride quantum dots (CdTe QDs) are an optically attractive option for bioimaging, but are known to display high cytotoxicity. Nanoparticles synthesized from chitosan, a natural biopolymer of β 1-4 linked glucosamine, display good biocompatibility and cellular uptake. A facile, green synthetic strategy has been developed to embed green fluorescent cadmium telluride quantum dots (CdTe QDs) in biocompatible CNPs to obtain a safer preparation than 'as is' QDs. High-resolution transmission electron microscopy showed the crystal lattice corresponding to CdTe QDs embedded in CNPs while thermogravimetry confirmed their polymeric composition. Electrostatic interactions between thiol-capped QDs (4 nm, -57 mV) and CNPs (~300 nm, +38 mV) generated CdTe QDs-embedded CNPs that were stable up to three months. Further, viability of NIH3T3 mouse fibroblast cells in vitro increased in presence of QDs-embedded CNPs as compared to bare QDs. At the highest concentration (10 μg/ml), the former shows 34 and 39% increase in viability at 24 and 48 h, respectively, as compared to the latter. This shows that chitosan nanoparticles do not release the QDs up to 48 h and do not cause extended toxicity. Furthermore, hydrolytic enzymes such as lysozyme and chitinase did not degrade chitosan nanoparticles. Moreover, QDs-embedded CNPs show enhanced internalization in NIH3T3 cells as compared to bare QDs. This method offers ease of synthesis and handling of stable, luminescent, biocompatible CdTe QDs-embedded CNPs with a favorable toxicity profile and better cellular uptake with potential for bioimaging and targeted detection of cellular components. PMID:25410797

  14. Mitochondrial Toxicity of Cadmium Telluride Quantum Dot Nanoparticles in Mammalian Hepatocytes

    PubMed Central

    Nguyen, Kathy C.; Rippstein, Peter; Tayabali, Azam F.; Willmore, William G.

    2015-01-01

    There are an increasing number of studies indicating that mitochondria are relevant targets in nanomaterial-induced toxicity. However, the underlying mechanisms by which nanoparticles (NPs) interact with these organelles and affect their functions are unknown. The aim of this study was to investigate the effects of cadmium telluride quantum dot (CdTe-QD) NPs on mitochondria in human hepatocellular carcinoma HepG2 cells. CdTe-QD treatment resulted in the enlargement of mitochondria as examined with transmission electron microscopy and confocal microscopy. CdTe-QDs appeared to associate with the isolated mitochondria as detected by their inherent fluorescence. Further analyses revealed that CdTe-QD caused disruption of mitochondrial membrane potential, increased intracellular calcium levels, impaired cellular respiration, and decreased adenosine triphosphate synthesis. The effects of CdTe-QDs on mitochondrial oxidative phosphorylation were evidenced by changes in levels and activities of the enzymes of the electron transport chain. Elevation of peroxisome proliferator-activated receptor-γ coactivator levels after CdTe-QD treatment suggested the effects of CdTe-QDs on mitochondrial biogenesis. Our results also showed that the effects of CdTe-QDs were similar or greater to those of cadmium chloride at equivalent concentrations of cadmium, suggesting that the toxic effects of CdTe-QDs were not solely due to cadmium released from the NPs. Overall, the study demonstrated that CdTe-QDs induced multifarious toxicity by causing changes in mitochondrial morphology and structure, as well as impairing their function and stimulating their biogenesis. PMID:25809595

  15. Inhibition of autophagy contributes to the toxicity of cadmium telluride quantum dots in Saccharomyces cerevisiae

    PubMed Central

    Fan, Junpeng; Shao, Ming; Lai, Lu; Liu, Yi; Xie, Zhixiong

    2016-01-01

    Cadmium telluride quantum dots (CdTe QDs) are used as near-infrared probes in biologic and medical applications, but their cytological effects and mechanism of potential toxicity are still unclear. In this study, we evaluated the toxicity of CdTe QDs of different sizes and investigated their mechanism of toxicity in the yeast Saccharomyces cerevisiae. A growth inhibition assay revealed that orange-emitting CdTe (O-CdTe) QDs (half inhibitory concentration [IC50] =59.44±12.02 nmol/L) were more toxic than green-emitting CdTe QDs (IC50 =186.61±19.74 nmol/L) to S. cerevisiae. Further studies on toxicity mechanisms using a transmission electron microscope and green fluorescent protein tagged Atg8 processing assay revealed that O-CdTe QDs could partially inhibit autophagy at a late stage, which differs from the results reported in mammalian cells. Moreover, autophagy inhibited at a late stage by O-CdTe QDs could be partially recovered by enhancing autophagy with rapamycin (an autophagy activator), combined with an increased number of living cells. These results indicate that inhibition of autophagy acts as a toxicity mechanism of CdTe QDs in S. cerevisiae. This work reports a novel toxicity mechanism of CdTe QDs in yeast and provides valuable information on the effect of CdTe QDs on the processes of living cells. PMID:27524895

  16. Temperature dependent van der Pauw-Hall measurements on sodium doped single crystalline cadmium telluride

    SciTech Connect

    Ahmad, Faisal R.

    2015-03-21

    In this report, results of the temperature dependent electrical conductivity measurements conducted on single crystalline cadmium telluride (CdTe), containing sodium (Na) impurities are presented and discussed. The electrical conductivity measurements were conducted using an apparatus that allowed the implementation of a standard van der Pauw-Hall effect technique through which the electrical resistivity, concentration of majority carriers, as well as the carrier mobility were determined for temperatures ranging between 24 K and 350 K. Over this temperature range, the electrical resistivity was observed to change by 7 orders of magnitude. Hall measurements showed that the hole concentration at 300 K was ∼3 × 10{sup 15 }cm{sup –3} and the hole mobility at the same temperature was ∼80 cm{sup 2}/V s. Measuring the concentration of holes as a function of the sample temperature enabled the estimation of the acceptor energy level with respect to the valence band maximum to be ∼60 meV. The same data also revealed the potential presence of a compensating donor level. Furthermore, the hole mobility was also analyzed over the entire temperature range and the data revealed that above 100 K, the carrier mobility was dominated by the scattering of holes from lattice vibrations.

  17. Investigations of Cadmium Manganese Telluride Crystals for Room-Temperature Radiation Detection

    SciTech Connect

    Yang, G.; Bolotnikov, A.; Camarda, G.; Cui, Y.; Hossain, A.; Kim, K.; Carcelen, V.; Gul, R.; James, R.

    2009-10-06

    Cadmium manganese telluride (CMT) has high potential as a material for room-temperature nuclear-radiation detectors. We investigated indium-doped CMT crystals taken from the stable growth region of the ingot, and compared its characteristics with that from the last-to-freeze region. We employed different techniques, including synchrotron white-beam X-ray topography (SWBXT), current-voltage (I-V) measurements, and low-temperature photoluminescence spectra, and we also assessed their responses as detectors to irradiation exposure. The crystal from the stable growth region proved superior to that from the last-to-freeze region; it is a single-grain crystal, free of twins, and displayed a resistivity higher by two orders-of-magnitude. The segregation of indium dopant in the ingot might be responsible for its better resistivity. Furthermore, we recorded a good response in the detector fabricated from the crystal taken from the stable growth region; its ({mu}{tau}){sub e} value was 2.6 x 10{sup -3} cm{sup 2}/V, which is acceptable for thin detectors, including for applications in medicine.

  18. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-09-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1- x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1- x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1- x Cd x Te etch rate. It is also observed that the exposed Hg1- x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1- x Cd x Te etch rate. Further, the exposed Hg1- x Cd x Te area is shown to affect the etch rate of the Hg1- x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1- x Cd x Te are listed, herein.

  19. On crucible effects during the growth of cadmium zinc telluride in an electrodynamic gradient freeze furnace

    NASA Astrophysics Data System (ADS)

    Gasperino, David; Bliss, Mary; Jones, Kelly; Lynn, Kelvin; Derby, Jeffrey J.

    2009-04-01

    The CrysMAS code of the Crystal Growth Laboratory, Fraunhofer IISB, is applied to reveal conditions occurring in electrodynamic gradient freeze furnaces during the growth of cadmium zinc telluride crystals. Of particular interest are heat transfer and growth conditions associated with crucibles of different design, one constructed of graphite and the other of pyrolytic boron nitride (PBN). Under identical furnace set-point schedules, the two systems exhibit very different behaviors. Specifically, the temperature field through the cone region of the PBN crucible displays much steeper axial thermal profiles and promotes convex solid-liquid interface shapes (rather than the concave shapes computed for the graphite crucible). Both systems exhibit a concave interface during growth through the cylindrical part of the crucible. However, the axial thermal profile through the graphite-crucible charge is considerably more offset from the set-point profile of the furnace due to significant axial heat flows through the crucible walls. These factors argue in favor of the PBN crucible; however, comparatively larger radial gradients in the PBN system could lead to higher dislocation levels.

  20. On crucible effects during the growth of cadmium zinc telluride in an electrodynamic gradient freeze furnace

    SciTech Connect

    Gasperino, David; Bliss, Mary; Jones, Kelly A.; Lynn, Kelvin G.; Derby, Jeffrey

    2009-01-04

    The CrysMAS code of the Crystal Growth Laboratory, Fraunhofer IISB, is applied to reveal conditions occurring in electrodynamic gradient freeze furnaces during the growth of cadmium zinc telluride crystals. Of particular interest are heat transfer and growth conditions associated with crucibles of different design, one constructed of graphite and the other of pyrolytic boron nitride (PBN). Under identical furnace set-point schedules, the PBN system exhibits very different heat transfer through the cone region of the crucible, resulting in steeper axial thermal profiles and convex solid-interface shapes (rather than the concave shapes computed for the graphite crucible). Both systems exhibit a concave interface during growth through the cylindrical part of the crucible; however, the axial thermal profile through the contents of the graphite crucible is considerably more offset from the set-point profile of the furnace due to the large axial flows of heat through the crucible walls. These conditions argue for advantage to the PBN system; however, comparatively larger radial gradients in the PBN system could lead to higher dislocation levels.

  1. Mercury-cadmium-telluride thin layers as subterahertz and infrared detectors

    NASA Astrophysics Data System (ADS)

    Sizov, Fedir; Tsybrii, Zinoviia; Zabudsky, Vyacheslav; Golenkov, Oleksandr; Petryiakov, Volodymyr; Dvoretsky, Sergey; Michailov, Nikolai; Shevchik-Shekera, Anna; Lysiuk, Ihor; Dieguez, Ernesto

    2015-12-01

    Issues associated with the development and exploitation of infrared (IR) and terahertz (THz) radiation detectors based on a narrow-gap "HgCdTe" semiconductor have been discussed. This mercury-cadmium-telluride (MCT) semiconductor can be applied for two-color detector operation in IR and sub-THz spectral ranges. Two-color uncooled and cooled down to 78 K narrow-gap MCT semiconductor thin layers grown using the liquid phase epitaxy or molecular beam epitaxy methods on high-resistive "CdZnTe" or "GaAs" substrates, with bow-type antennas, have been considered both as sub-THz direct detection bolometers and 3 to 10 μm IR photoconductors. Their room temperature noise equivalent power at the frequency ν≈140 GHz and signal-to-noise ratio at the spectral sensitivity maximum under monochromatic (spectral resolution ˜0.1 μm) globar illumination reached the following values; ˜4.5×10-10 W/Hz1/2 and ˜50, respectively. Aspheric lenses used for obtaining the images in the sub-THz spectral region were designed and manufactured. With these detectors, about 140 and 270 GHz imaging data have been demonstrated.

  2. Simulation study comparing high-purity germanium and cadmium zinc telluride detectors for breast imaging

    PubMed Central

    Campbell, DL; Peterson, TE

    2014-01-01

    We conducted simulations to compare the potential imaging performance for breast cancer detection with High-Purity Germanium (HPGe) and Cadmium Zinc Telluride (CZT) systems with 1% and 3.8% energy resolution at 140 keV, respectively. Using the Monte Carlo N-Particle (MCNP5) simulation package, we modelled both 5 mm-thick CZT and 10 mm-thick HPGe detectors with the same parallel-hole collimator for the imaging of a breast/torso phantom. Simulated energy spectra were generated, and planar images were created for various energy windows around the 140-keV photopeak. Relative sensitivity and scatter and the torso fractions were calculated along with tumour contrast and signal-to-noise ratios (SNR). Simulations showed that utilizing a ±1.25% energy window with an HPGe system better suppressed torso background and small-angle scattered photons than a comparable CZT system using a −5%/+10% energy window. Both systems provided statistically similar contrast and SNR, with HPGe providing higher relative sensitivity. Lowering the counts of HPGe images to match CZT count density still yielded equivalent contrast between HPGe and CZT. Thus, an HPGe system may provide equivalent breast imaging capability at lower injected radioactivity levels when acquiring for equal imaging time. PMID:25360792

  3. Inhibition of autophagy contributes to the toxicity of cadmium telluride quantum dots in Saccharomyces cerevisiae.

    PubMed

    Fan, Junpeng; Shao, Ming; Lai, Lu; Liu, Yi; Xie, Zhixiong

    2016-01-01

    Cadmium telluride quantum dots (CdTe QDs) are used as near-infrared probes in biologic and medical applications, but their cytological effects and mechanism of potential toxicity are still unclear. In this study, we evaluated the toxicity of CdTe QDs of different sizes and investigated their mechanism of toxicity in the yeast Saccharomyces cerevisiae. A growth inhibition assay revealed that orange-emitting CdTe (O-CdTe) QDs (half inhibitory concentration [IC50] =59.44±12.02 nmol/L) were more toxic than green-emitting CdTe QDs (IC50 =186.61±19.74 nmol/L) to S. cerevisiae. Further studies on toxicity mechanisms using a transmission electron microscope and green fluorescent protein tagged Atg8 processing assay revealed that O-CdTe QDs could partially inhibit autophagy at a late stage, which differs from the results reported in mammalian cells. Moreover, autophagy inhibited at a late stage by O-CdTe QDs could be partially recovered by enhancing autophagy with rapamycin (an autophagy activator), combined with an increased number of living cells. These results indicate that inhibition of autophagy acts as a toxicity mechanism of CdTe QDs in S. cerevisiae. This work reports a novel toxicity mechanism of CdTe QDs in yeast and provides valuable information on the effect of CdTe QDs on the processes of living cells. PMID:27524895

  4. Advanced methods for preparation and characterization of infrared detector materials. [mercury cadmium tellurides

    NASA Technical Reports Server (NTRS)

    Lehoczky, S. L.; Szofran, F. R.; Martin, B. G.

    1980-01-01

    Mercury cadmium telluride crystals were prepared by the Bridgman method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of the crystal growth kinetics for the Hg(i-x)CdxTe alloys, and measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential thermal analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge carrier concentrations, charge carrier mobilities, Hall coefficient, optical absorptance, and Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

  5. Temperature dependence measurements for Cadmium Telluride (CdTe) solar cells

    NASA Astrophysics Data System (ADS)

    Duarte, Fernanda; Wang, Weining

    2015-03-01

    Traditional silicon (Si)-based solar cells have been studied broadly and have already reached their maximum efficiency. However, their cost is relatively high, preventing them from being widely used. Unlike Si-based solar cells, Cadmium Telluride (CdTe) solar cells are considerably cheap, yet the record efficiency is still lower than that of traditional silicon-based solar cells. More studies are needed to understand and improve the efficiency of CdTe solar cells. In this work, we report our studies of the temperature dependence of CdTe solar cell parameters using the temperature-varying apparatus designed and built by us in-house. This temperature-varying apparatus will be incorporated with a solar cell testing station in order to measure the solar cell parameters while varying the temperature. The solar cell parameters will be measured at different temperatures (with a 100 K temperature range), and the effects of temperature on the open-circuit voltage, short-circuit current and efficiency of the solar cells will be reported. These results allow us to further understand the physics of CdTe solar cells and shine light on how to improve the efficiency of CdTe solar cells.

  6. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-05-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1-x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1-x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1-x Cd x Te etch rate. It is also observed that the exposed Hg1-x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1-x Cd x Te etch rate. Further, the exposed Hg1-x Cd x Te area is shown to affect the etch rate of the Hg1-x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1-x Cd x Te are listed, herein.

  7. Energy discriminating x-ray camera utilizing a cadmium telluride detector

    NASA Astrophysics Data System (ADS)

    Sato, Eiichi; Purkhet, Abderyim; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Wantanabe, Manabu; Nagao, Jiro; Nomiya, Seiichiro; Hitomi, Keitaro; Tanaka, Etsuro; Kawai, Toshiaki; Sato, Shigehiro; Ogawa, Akira; Onagawa, Jun

    2009-07-01

    An energy-discriminating x-ray camera is useful for performing monochromatic radiography using polychromatic x rays. This x-ray camera was developed to carry out K-edge radiography using iodine-based contrast media. In this camera, objects are exposed by a cone beam from a cerium x-ray generator, and penetrating x-ray photons are detected by a cadmium telluride detector with an amplifier unit. The optimal x-ray photon energy and the energy width are selected out using a multichannel analyzer, and the photon number is counted by a counter card. Radiography was performed by the detector scanning using an x-y stage driven by a two-stage controller, and radiograms obtained by energy discriminating are shown on a personal computer monitor. In radiography, the tube voltage and current were 60 kV and 36 μA, respectively, and the x-ray intensity was 4.7 μGy/s. Cerium K-series characteristic x rays are absorbed effectively by iodine-based contrast media, and iodine K-edge radiography was performed using x rays with energies just beyond iodine K-edge energy 33.2 keV.

  8. Cadmium telluride nanoparticles loaded on activated carbon as adsorbent for removal of sunset yellow.

    PubMed

    Ghaedi, M; Hekmati Jah, A; Khodadoust, S; Sahraei, R; Daneshfar, A; Mihandoost, A; Purkait, M K

    2012-05-01

    Adsorption is a promising technique for decolorization of effluents of textile dyeing industries but its application is limited due to requirement of high amounts of adsorbent required. The objective of this study was to assess the potential of cadmium telluride nanoparticles loaded onto activated carbon (CdTN-AC) for the removal of sunset yellow (SY) dye from aqueous solution. Adsorption studies were conducted in a batch mode varying solution pH, contact time, initial dye concentration, CdTN-AC dose, and temperature. In order to investigate the efficiency of SY adsorption on CdTN-AC, pseudo-first-order, pseudo-second-order, Elovich, and intra-particle diffusion kinetic models were studied. It was observed that the pseudo-second-order kinetic model fits better than other kinetic models with good correlation coefficient. Equilibrium data were fitted to the Langmuir model. Thermodynamic parameters such as enthalpy, entropy, activation energy, and sticking probability were also calculated. It was found that the sorption of SY onto CdTN-AC was spontaneous and endothermic in nature. The proposed adsorbent is applicable for SY removal from waste of real effluents including pea-shooter, orange drink and jelly banana with efficiency more than 97%. PMID:22306446

  9. Cadmium telluride nanoparticles loaded on activated carbon as adsorbent for removal of sunset yellow

    NASA Astrophysics Data System (ADS)

    Ghaedi, M.; Hekmati Jah, A.; Khodadoust, S.; Sahraei, R.; Daneshfar, A.; Mihandoost, A.; Purkait, M. K.

    2012-05-01

    Adsorption is a promising technique for decolorization of effluents of textile dyeing industries but its application is limited due to requirement of high amounts of adsorbent required. The objective of this study was to assess the potential of cadmium telluride nanoparticles loaded onto activated carbon (CdTN-AC) for the removal of sunset yellow (SY) dye from aqueous solution. Adsorption studies were conducted in a batch mode varying solution pH, contact time, initial dye concentration, CdTN-AC dose, and temperature. In order to investigate the efficiency of SY adsorption on CdTN-AC, pseudo-first-order, pseudo-second-order, Elovich, and intra-particle diffusion kinetic models were studied. It was observed that the pseudo-second-order kinetic model fits better than other kinetic models with good correlation coefficient. Equilibrium data were fitted to the Langmuir model. Thermodynamic parameters such as enthalpy, entropy, activation energy, and sticking probability were also calculated. It was found that the sorption of SY onto CdTN-AC was spontaneous and endothermic in nature. The proposed adsorbent is applicable for SY removal from waste of real effluents including pea-shooter, orange drink and jelly banana with efficiency more than 97%.

  10. Directional solidification of mercury cadmium telluride during the second United States Microgravity Payload Mission (USMP-2)

    SciTech Connect

    Gillies, D.C.; Lehoczky, S.L.; Szofran, F.R.; Watring, D.A.; Alexander, H.A.; Jerman, G.A.

    1996-12-31

    As a solid solution semiconductor having a large separation between liquidus and solidus, mercury cadmium telluride (MCT) presents a formidable challenge to crystal growers desiring an alloy of high compositional uniformity. To avoid constitutional supercooling during Bridgman crystal growth it is necessary to solidify slowly in a high temperature gradient region. The necessary translation rate of less than 1 mm/hr results in a situation where fluid flow induced by gravity on earth is a significant factor in material transport. The Advanced Automated Directional Solidification Furnace (AADSF) is equipped to provide the stable thermal environment with a high gradient, and the required slow translation rate needed. Ground based experiments in AADSF show clearly the dominance of flow driven transport. The first flight of AADSF in low gravity on USMP-2 provided an opportunity to test theories of fluid flow in MCT and showed several solidification regimes which are very different from those observed on earth. Residual acceleration vectors in the orbiter during the mission were measured by the Orbital Acceleration Research Experiment (OARE), and correlated well with observed compositional differences in the samples.

  11. Characterization of Pixelated Cadmium-Zinc-Telluride Detectors for Astrophysical Applications

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

    2003-01-01

    Comparisons of charge sharing and charge loss measurements between two pixelated Cadmium-Zinc-Telluride (CdZnTe) detectors are discussed. These properties along with the detector geometry help to define the limiting energy resolution and spatial resolution of the detector in question. The first detector consists of a 1-mm-thick piece of CdZnTe sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). Signal readout is via discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). This crystal is bonded to a custom-built readout chip (ASIC) providing all front-end electronics to each of the 256 independent pixels. These detectors act as precursors to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation.

  12. Simulation study comparing high-purity germanium and cadmium zinc telluride detectors for breast imaging

    NASA Astrophysics Data System (ADS)

    Campbell, D. L.; Peterson, T. E.

    2014-11-01

    We conducted simulations to compare the potential imaging performance for breast cancer detection with High-Purity Germanium (HPGe) and Cadmium Zinc Telluride (CZT) systems with 1% and 3.8% energy resolution at 140 keV, respectively. Using the Monte Carlo N-Particle (MCNP5) simulation package, we modelled both 5 mm-thick CZT and 10 mm-thick HPGe detectors with the same parallel-hole collimator for the imaging of a breast/torso phantom. Simulated energy spectra were generated, and planar images were created for various energy windows around the 140 keV photopeak. Relative sensitivity and scatter and the torso fractions were calculated along with tumour contrast and signal-to-noise ratios (SNR). Simulations showed that utilizing a ±1.25% energy window with an HPGe system better suppressed torso background and small-angle scattered photons than a comparable CZT system using a -5%/+10% energy window. Both systems provided statistically similar contrast and SNR, with HPGe providing higher relative sensitivity. Lowering the counts of HPGe images to match CZT count density still yielded equivalent contrast between HPGe and CZT. Thus, an HPGe system may provide equivalent breast imaging capability at lower injected radioactivity levels when acquiring for equal imaging time.

  13. Low-cost cadmium zinc telluride radiation detectors based on electron-transport-only designs

    SciTech Connect

    B. A. Brunett; J. C. Lund; J. M. Van Scyoc; N. R. Hilton; E. Y. Lee; R. B. James

    1999-01-01

    The goal of this project was to utilize a novel device design to build a compact, high resolution, room temperature operated semiconductor gamma ray sensor. This sensor was constructed from a cadmium zinc telluride (CZT) crystal. It was able to both detect total radiation intensity and perform spectroscopy on the detected radiation. CZT detectors produced today have excellent electron charge carrier collection, but suffer from poor hole collection. For conventional gamma-ray spectrometers, both the electrons and holes must be collected with high efficiency to preserve energy resolution. The requirement to collect the hole carriers, which have relatively low lifetimes, limits the efficiency and performance of existing experimental devices. By implementing novel device designs such that the devices rely only on the electron signal for energy information, the sensitivity of the sensors for detecting radiation can be increased substantially. In this report the authors describe a project to develop a new type of electron-only CZT detector. They report on their successful efforts to design, implement and test these new radiation detectors. In addition to the design and construction of the sensors the authors also report, in considerable detail, on the electrical characteristics of the CZT crystals used to make their detectors.

  14. X-ray rocking curve analysis of ion implanted mercury cadmium telluride

    NASA Astrophysics Data System (ADS)

    Williams, B. L.; Robinson, H. G.; Helms, C. R.; Zhu, N.

    1997-06-01

    Junction formation by ion implantation is a critical step in producing high quality infrared focal plane arrays in mercury cadmium telluride (MCT). We have analyzed the structural properties of MCT implanted with B at doses of 1014 and 1015 cm-2 using double and triple crystal x-ray diffraction (DCD and TCD) to monitor the disorder and strain of the implanted region as a function of processing conditions. TCD (333) reflections show that a distinct tensile peak is produced by the high dose implant while the low dose implant shows only a low angle shoulder on the substrate peak. A preliminary association of the low angle shoulder with point defects has been made since no extended defects have been observed in the low dose range. For the high dose implant, extended defect formation has been reported and may be responsible for the tensile peak. After annealing, the low angle shoulder on the low dose implant has disappeared, while the high dose implant exhibits an increase in the tensile strain from 6.5 × 10-4 to 9.3 × 10-4 after 24 h of annealing and then decreases in tensile strain to 7.3 × 10-4 after 48 h of annealing. It is believed the changes in strain are associated with the Oswald ripening and dissolution of extended defects, which has been observed during annealing of ion implanted Si.

  15. Cadmium telluride films for lightweight solar cells for space and terrestrial applications

    SciTech Connect

    Singh, V.P.; Lush, G.B.; Santiesteban, R.; McClure, J.C.; Chavez, H.

    1995-01-25

    Deposition of cadmium telluride (CdTe) films on steel foil substrates was investigated. Adherent CdTe films were vacuum evaporated and a growth rate of 3 nm/sec was obtained at a substrate temperature of 533 K. As deposited films exhibited a preferred (111) orientation. A tellurium interlayer between CdTe and steel yielded larger grains in CdTe than a gold interlayer. Annealing of CdTe films at 823 K increased the grain size and reduced the film resistance; it also tended to transform p-type CdTe into n-type. This was attributed to the diffusion of tellurium from CdTe into steel and diffusion of iron from the steel substrate into the CdTe film. This diffusion was observed using energy dispersive X-ray analysis. A photovoltage was obtained by depositing CdS on top of p-CdTe and a V{sub oc} of 360 mV was obtained. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}

  16. Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

    SciTech Connect

    Beck, Patrick R.

    2010-01-07

    Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current or leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.

  17. A novel approach of chemical mechanical polishing for cadmium zinc telluride wafers

    PubMed Central

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Kang, Renke; Zhang, Bi; Guo, Dongming

    2016-01-01

    A novel approach of chemical mechanical polishing (CMP) is developed for cadmium zinc telluride (CdZnTe or CZT) wafers. The approach uses environment-friendly slurry that consists of mainly silica, hydrogen peroxide, and citric acid. This is different from the previously reported slurries that are usually composed of strong acid, alkali, and bromine methanol, and are detrimental to the environment and operators. Surface roughness 0.5 nm and 4.7 nm are achieved for Ra and peak-to-valley (PV) values respectively in a measurement area of 70 × 50 μm2, using the developed novel approach. Fundamental polishing mechanisms are also investigated in terms of X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Hydrogen peroxide dominates the passivating process during the CMP of CZT wafers, indicating by the lowest passivation current density among silica, citric acid and hydrogen peroxide solution. Chemical reaction equations are proposed during CMP according to the XPS and electrochemical measurements. PMID:27225310

  18. Theory of the electronic properties of mercury-cadmium-telluride alloys

    NASA Astrophysics Data System (ADS)

    Chen, A. B.; Sher, A.

    1984-02-01

    An accurate band-structure theory for semiconductor alloys was achieved. It has been successfully applied to Mercury-Cadmium-Telluride alloys (MCT), and is being extended to III-V and other II-VI semiconductor alloys. As a result of this research, ten papers have been published. Several other papers and one book are in progress. The most important finding was the origin of the major disorder and its effects on different parts of the band structure. The large s-energy fluctuation between the Hg and Cd sites was found to cause a large smearing in the density of states about 5 eV below the top of the valence band, but it produced very little bowing and scattering for the states near the band gap. A detailed study of these facts accounts for the lattice instability of MCT and its very high electron mobility. Another significant result is that, while Cd weakens a neighboring Hg-Te bond, Zn strengthens it. Such structural studies may help resolve the adverse structural difficulties affecting MCT as an infrared material.

  19. Directional Solidification of Mercury Cadmium Telluride During the Second United States Microgravity Payload Mission (USMP-2)

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Lehoczky, S. L.; Szofran, F. R.; Watring, D. A.; Alexander, H. A.; Jerman, G. A.

    1996-01-01

    As a solid solution semiconductor having, a large separation between liquidus and solidus, mercury cadmium telluride (MCT) presents a formidable challenge to crystal growers desiring an alloy of high compositional uniformity. To avoid constitutional supercooling during Bridgman crystal growth it is necessary to solidify slowly in a high temperature gradient region. The necessary translation rate of less than 1 mm/hr results in a situation where fluid flow induced by gravity on earth is a significant factor in material transport. The Advanced Automated Directional Solidification Furnace (AADSF) is equipped to provide the stable thermal environment with a high gradient, and the required slow translation rate needed. Ground based experiments in AADSF show clearly the dominance of flow driven transport. The first flight of AADSF in low gravity on USMP-2 provided an opportunity to test theories of fluid flow in MCT and showed several solidification regimes which are very different from those observed on earth. Residual acceleration vectors in the orbiter during the mission were measured by the Orbital Acceleration Research Experiment (OARE), and correlated well with observed compositional differences in the samples.

  20. Temperature dependent van der Pauw-Hall measurements on sodium doped single crystalline cadmium telluride

    NASA Astrophysics Data System (ADS)

    Ahmad, Faisal R.

    2015-03-01

    In this report, results of the temperature dependent electrical conductivity measurements conducted on single crystalline cadmium telluride (CdTe), containing sodium (Na) impurities are presented and discussed. The electrical conductivity measurements were conducted using an apparatus that allowed the implementation of a standard van der Pauw-Hall effect technique through which the electrical resistivity, concentration of majority carriers, as well as the carrier mobility were determined for temperatures ranging between 24 K and 350 K. Over this temperature range, the electrical resistivity was observed to change by 7 orders of magnitude. Hall measurements showed that the hole concentration at 300 K was ˜3 × 1015 cm-3 and the hole mobility at the same temperature was ˜80 cm2/V s. Measuring the concentration of holes as a function of the sample temperature enabled the estimation of the acceptor energy level with respect to the valence band maximum to be ˜60 meV. The same data also revealed the potential presence of a compensating donor level. Furthermore, the hole mobility was also analyzed over the entire temperature range and the data revealed that above 100 K, the carrier mobility was dominated by the scattering of holes from lattice vibrations.

  1. A novel approach of chemical mechanical polishing for cadmium zinc telluride wafers.

    PubMed

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Kang, Renke; Zhang, Bi; Guo, Dongming

    2016-01-01

    A novel approach of chemical mechanical polishing (CMP) is developed for cadmium zinc telluride (CdZnTe or CZT) wafers. The approach uses environment-friendly slurry that consists of mainly silica, hydrogen peroxide, and citric acid. This is different from the previously reported slurries that are usually composed of strong acid, alkali, and bromine methanol, and are detrimental to the environment and operators. Surface roughness 0.5 nm and 4.7 nm are achieved for Ra and peak-to-valley (PV) values respectively in a measurement area of 70 × 50 μm(2), using the developed novel approach. Fundamental polishing mechanisms are also investigated in terms of X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Hydrogen peroxide dominates the passivating process during the CMP of CZT wafers, indicating by the lowest passivation current density among silica, citric acid and hydrogen peroxide solution. Chemical reaction equations are proposed during CMP according to the XPS and electrochemical measurements. PMID:27225310

  2. A novel approach of chemical mechanical polishing for cadmium zinc telluride wafers

    NASA Astrophysics Data System (ADS)

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Kang, Renke; Zhang, Bi; Guo, Dongming

    2016-05-01

    A novel approach of chemical mechanical polishing (CMP) is developed for cadmium zinc telluride (CdZnTe or CZT) wafers. The approach uses environment-friendly slurry that consists of mainly silica, hydrogen peroxide, and citric acid. This is different from the previously reported slurries that are usually composed of strong acid, alkali, and bromine methanol, and are detrimental to the environment and operators. Surface roughness 0.5 nm and 4.7 nm are achieved for Ra and peak-to-valley (PV) values respectively in a measurement area of 70 × 50 μm2, using the developed novel approach. Fundamental polishing mechanisms are also investigated in terms of X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Hydrogen peroxide dominates the passivating process during the CMP of CZT wafers, indicating by the lowest passivation current density among silica, citric acid and hydrogen peroxide solution. Chemical reaction equations are proposed during CMP according to the XPS and electrochemical measurements.

  3. Nanometer fabrication in mercury cadmium telluride by electron cyclotron resonance microwave plasma reactive ion etching

    NASA Astrophysics Data System (ADS)

    Eddy, C. R.; Hoffman, C. A.; Meyer, J. R.; Dobisz, E. A.

    1993-08-01

    It has been recently reported (J.R. Meyer, F.J. Bartoli, C.A. Hoffman, and L.R. Ram-Mohan, Phys. Rev. Lett. 64, 1963 [1990]) that novel electronic and optical effects are anticipated in nanometer scale features of narrow band gap semiconductors such as mercury cadmium telluride (MCT). These efforts could lead to the creation of non-linear optical switches, high efficiency infrared lasers, and unique nanoelectronic devices. This work reports on the first realization of MCT nanostructures through the application of e-beam lithography and reactive ion etching with an electron cyclotron resonance (ECR) microwave plasma source. It is shown that the low energy ions produced by an ECR system can etch MCT with good selectivity over an e-beam resist mask and with high resolution. Using these fabrication methods, 40 70 nm features with aspect ratios of 3 5∶1 and sidewall angles greater than 88° have been demonstrated. Qualitative investigations of some of the etch mechanisms of this technique are made, and results suggest a desorption limited process.

  4. Two-color detector: Mercury-cadmium-telluride as a terahertz and infrared detector

    SciTech Connect

    Sizov, F.; Zabudsky, V.; Petryakov, V.; Golenkov, A.; Andreyeva, K.; Tsybrii, Z.; Dvoretskii, S.

    2015-02-23

    In this paper, issues associated with the development of infrared (IR) and terahertz (THz) radiation detectors based on HgCdTe are discussed. Two-color un-cooled and cooled to 78 K narrow-gap mercury-cadmium-telluride semiconductor thin layers with antennas were considered both as sub-THz (sub-THz) direct detection bolometers and 3–10 μm IR photoconductors. The noise equivalent power (NEP) for one of the detectors studied at ν ≈ 140 GHz reaches NEP{sub 300 K} ≈ 4.5 × 10{sup −10} W/Hz{sup 1/2} and NEP{sub 78 K} ≈ 5 × 10{sup −9} W/Hz{sup 1/2}. The same detector used as an IR photoconductor showed the responsivity at temperatures T = 78 K and 300 K with signal-to-noise ratio S/N ≈ 750 and 50, respectively, under illumination by using IR monochromator and globar as a thermal source.

  5. Heart imaging by cadmium telluride gamma cameraEuropean Program ``BIOMED'' consortium

    NASA Astrophysics Data System (ADS)

    Scheiber, Ch.; Eclancher, B.; Chambron, J.; Prat, V.; Kazandjan, A.; Jahnke, A.; Matz, R.; Thomas, S.; Warren, S.; Hage-Hali, M.; Regal, R.; Siffert, P.; Karman, M.

    1999-06-01

    Cadmium telluride semiconductor detectors (CdTe) operating at room temperature are attractive for medical imaging because of their good energy resolution providing excellent spatial and contrast resolution. The compactness of the detection system allows the building of small light camera heads which can be used for bedside imaging. A mobile pixellated gamma camera based on 2304 CdTe (pixel size: 3×3 mm, field of view: 15 cm×15 cm) has been designed for cardiac imaging. A dedicated 16-channel integrated circuit has also been designed. The acquisition hardware is fully programmable (DSP card, personal computer-based system). Analytical calculations have shown that a commercial parrallel hole collimator will fit the efficiency/resolution requirements for cardiac applications. Monte-Carlo simulations predict that the Moire effect can be reduced by a 15° tilt of the collimator with respect to the detector grid. A 16×16 CdTe module has been built for the preliminary physical tests. The energy resolution was 6.16±0.6 keV (mean ± standard deviation, n=30). Uniformity was ±10%, improving to ±1% when using a correction table. Test objects (emission data: letters 1.8 mm in width) and cold rods in scatter medium have been acquired. The CdTe images have been compared to those acquired with a conventionnal gamma camera.

  6. Novel Cadmium Zinc Telluride Devices for Myocardial Perfusion Imaging-Technological Aspects and Clinical Applications.

    PubMed

    Ben-Haim, Simona; Kennedy, John; Keidar, Zohar

    2016-07-01

    Myocardial perfusion imaging plays an important role in the assessment of patients with known or suspected coronary artery disease and is well established for diagnosis and for prognostic evaluation in these patients. The dedicated cardiac SPECT cameras with solid-state cadmium zinc telluride (CZT) detectors were first introduced a decade ago. A large body of evidence is building up, showing the superiority of the new technology compared with conventional gamma cameras. Not only the CZT detectors, but also new collimator geometries, the ability to perform focused imaging optimized for the heart and advances in data processing algorithms all contribute to the significantly improved sensitivity up to 8-10 times, as well as improved energy resolution and improved reconstructed spatial resolution compared with conventional technology. In this article, we provide an overview of the physical characteristics of the CZT cameras, as well as a review of the literature published so far, including validation studies in comparison with conventional myocardial perfusion imaging and with invasive coronary angiography, significant reduction in radiation dose, and new imaging protocols enabled by the new technology. PMID:27237438

  7. Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide

    NASA Astrophysics Data System (ADS)

    Patterson, James D.; Li, Wei-Gang

    1995-03-01

    The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity.

  8. Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide

    NASA Technical Reports Server (NTRS)

    Patterson, James D.; Li, Wei-Gang

    1995-01-01

    The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity.

  9. Buoyancy and rotation in small-scale vertical Bridgman growth of cadmium zinc telluride using accelerated crucible rotation

    NASA Astrophysics Data System (ADS)

    Yeckel, Andrew; Derby, Jeffrey J.

    2001-12-01

    Theoretical simulations of vertical Bridgman growth of cadmium zinc telluride are performed to study the effects of the accelerated crucible rotation technique (ACRT). The results indicate that thermal buoyancy has a dramatic effect on the flow, even in a relatively small system at high rotation rate, contrary to assertions made in recent papers by Liu et al. (J. Crystal Growth 219 (2000) 22). We demonstrate their prior results greatly overstate the effectiveness of ACRT at promoting mixing. Contrary to conventional wisdom, the ACRT rotation cycle considered here for a small-scale growth system actually suppresses mixing in the melt near the ampoule wall, resulting in diffusion-limited mass transport there.

  10. Characterization of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by floating zone method

    NASA Astrophysics Data System (ADS)

    Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Gul, R.; Roy, U. N.; Yang, G.; Liu, T.; Zhong, R.; Schneeloch, J.; James, R. B.

    2014-09-01

    Recently, Cadmium Manganese Telluride (CMT) emerged as a promising material for roomtemperature X- and gamma-ray detectors. However, our studies revealed several material defects primarily related to growth processes that are impeding the production of large single crystals with high resistivity and high mobility-lifetime product. In this work, we characterized various defects in materials grown by the floating zone method, including twins, Te inclusions, and dislocations, using our unique facilities. We also fabricated detectors from selected CMT crystals and tested their performance. This paper discusses our detailed findings on the material's properties and the performance of fabricated CMT detectors.

  11. A Novel Metal-Rich Anneal for In Vacuo Passivation of High-Aspect-Ratio Mercury Cadmium Telluride Surfaces

    NASA Astrophysics Data System (ADS)

    Wan, Chang-Feng; Orent, Thomas; Myers, Thomas; Bhat, Ishwara; Stoltz, Andy; Pellegrino, Joe

    2013-11-01

    A new method for Cd-rich annealing of mercury cadmium telluride (MCT) was developed based on the observation that the deposition of Cd onto MCT by vacuum evaporation became self-limiting whenever the substrate temperature was above 70°C regardless of the Cd evaporation rate. Preliminary results indicated that this new method may be suitable for passivation of high-aspect-ratio MCT surfaces, for passivation at low temperatures, for in vacuo operation, and/or for vacancy annihilation in MCT. Furthermore, the process can be carried out in the conventional open-tube reactors used for molecular beam epitaxy, metalorganic chemical vapor deposition, and physical vapor deposition.

  12. Chemiluminescence studies between aqueous phase synthesized mercaptosuccinic acid capped cadmium telluride quantum dots and luminol-H2O2.

    PubMed

    Kaviyarasan, Kulandaivelu; Anandan, Sambandam; Mangalaraja, Ramalinga Viswanathan; Asiri, Abdullah M; Wu, Jerry J

    2016-08-01

    Mercaptosuccinic acid capped Cadmium telluride quantum dots have been successfully synthesized via aqueous phase method. The products were well characterized by a number of analytical techniques, including FT-IR, XRD, HRTEM, and a corrected particle size analysis by the statistical treatment of several AFM measurements. Chemiluminescence experiments were performed to explore the resonance energy transfer between chemiluminescence donor (luminol-H2O2 system) and acceptor CdTe QDs. The combination of such donor and acceptor dramatically reduce the fluorescence while compared to pristine CdTe QDs without any exciting light source, which is due to the occurrence of chemiluminescence resonance energy transfer (CRET) processes. PMID:27131144

  13. On the possible role played by tunnel recombination in the loss processes of excess current carriers in cadmium telluride

    NASA Astrophysics Data System (ADS)

    Novikov, G. F.; Marinin, A. A.; Gapanovich, M. V.; Rabenok, E. V.

    2010-05-01

    The microwave photoconductivity method was used to study the kinetics of the decay of current carriers generated by nitrogen laser pulses in n- and p-type cadmium telluride. The dependences of the shape and amplitude of photoresponse decays on temperature and light intensity were studied. Photoresponse decays contained "fast" (at t < 30 ns) and "slow" (at t > 50 ns) components. At long times, the dependence of photoresponse on the logarithm of time was linear. The shape of slow component decays was almost independent of temperature. The slow component of photoresponse decay could correspond to the loss process of entrapped charges in tunnel recombination.

  14. Chemiluminescence studies between aqueous phase synthesized mercaptosuccinic acid capped cadmium telluride quantum dots and luminol-H2O2

    NASA Astrophysics Data System (ADS)

    Kaviyarasan, Kulandaivelu; Anandan, Sambandam; Mangalaraja, Ramalinga Viswanathan; Asiri, Abdullah M.; Wu, Jerry J.

    2016-08-01

    Mercaptosuccinic acid capped Cadmium telluride quantum dots have been successfully synthesized via aqueous phase method. The products were well characterized by a number of analytical techniques, including FT-IR, XRD, HRTEM, and a corrected particle size analysis by the statistical treatment of several AFM measurements. Chemiluminescence experiments were performed to explore the resonance energy transfer between chemiluminescence donor (luminol-H2O2 system) and acceptor CdTe QDs. The combination of such donor and acceptor dramatically reduce the fluorescence while compared to pristine CdTe QDs without any exciting light source, which is due to the occurrence of chemiluminescence resonance energy transfer (CRET) processes.

  15. Mercury-Cadmium-Telluride Focal Plane Array Performance Under Non-Standard Operating Conditions

    NASA Technical Reports Server (NTRS)

    Richardson, Brandon S.; Eastwood, Michael L.; Bruce, Carl F.; Green, Robert O.; Coles, J. B.

    2011-01-01

    This paper highlights a new technique that allows the Teledyne Scientific & Imaging LLC TCM6604A Mercury-Cadmium-Telluride (MCT) Focal Plane Array (FPA) to operate at room temperature. The Teledyne MCT FPA has been a standard in Imaging Spectroscopy since its creation in the 1980's. This FPA has been used in applications ranging from space instruments such as CRISM, M3 and ARTEMIS to airborne instruments such as MaRS and the Next Generation AVIRIS Instruments1. Precise focal plane alignment is always a challenge for such instruments. The current FPA alignment process results in multiple cold cycles requiring week-long durations, thereby increasing the risk and cost of a project. These alignment cycles are necessary because optimal alignment is approached incrementally and can only be measured with the FPA and Optics at standard operating conditions, requiring a cold instrument. Instruments using this FPA are normally cooled to temperatures below 150K for the MCT FPA to properly function. When the FPA is run at higher temperatures the dark current increases saturating the output. This paper covers the prospect of warm MCT FPA operation from a theoretical and experimental perspective. We discuss the empirical models and physical laws that govern MCT material properties and predict the optimal settings that will result in the best MCT PA performance at 300K. Theoretical results are then calculated for the proposed settings. We finally present the images and data obtained using the actual system with the warm MCT FPA settings. The paper concludes by emphasizing the strong positive correlation between the measured values and the theoretical results.

  16. Charge Loss and Charge Sharing Measurements for Two Different Pixelated Cadmium-Zinc-Telluride Detectors

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

    2003-01-01

    As part of ongoing research at Marshall Space Flight Center, Cadmium-Zinc- Telluride (CdZnTe) pixilated detectors are being developed for use at the focal plane of the High Energy Replicated Optics (HERO) telescope. HERO requires a 64x64 pixel array with a spatial resolution of around 200 microns (with a 6m focal length) and high energy resolution (< 2% at 60keV). We are currently testing smaller arrays as a necessary first step towards this goal. In this presentation, we compare charge sharing and charge loss measurements between two devices that differ both electronically and geometrically. The first device consists of a 1-mm-thick piece of CdZnTe that is sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). The signal is read out using discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe that is sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). Instead of using discrete preamplifiers, the crystal is bonded to an ASIC that provides all of the front-end electronics to each of the 256 pixels. what degree the bias voltage (i.e. the electric field) and hence the drift and diffusion coefficients affect our measurements. Further, we compare the measured results with simulated results and discuss to

  17. Cadmium zinc telluride based infrared interferometry for X-ray detection

    SciTech Connect

    Lohstroh, A. Della Rocca, I.; Parsons, S.; Langley, A.; Shenton-Taylor, C.; Blackie, D.

    2015-02-09

    Cadmium Zinc Telluride (CZT) is a wide band gap semiconductor for room temperature radiation detection. The electro-optic Pockels effect of the material has been exploited in the past to study electric field non-uniformities and their consequence on conventional detector signals in CZT, by imaging the intensity distribution of infrared (IR) light transmitted through a device placed between crossed polarizers. Recently, quantitative monitoring of extremely high intensity neutron pulses through the change of transmitted IR intensity was demonstrated, offering the advantage to place sensitive electronics outside the measured radiation field. In this work, we demonstrate that X-ray intensity can be deduced directly from measuring the change in phase of 1550 nm laser light transmitted through a 7 × 7 × 2 mm{sup 3} CZT based Pockels cell in a simple Mach Zehnder interferometer. X-rays produced by a 50 kVp Mo X-ray tube incident on the CZT cathode surface placed at 7 mm distance cause a linearly increasing phase shift above 0.3 mA tube current, with 1.58 ± 0.02 rad per mA for an applied bias of 500 V across the 2 mm thick device. Pockels images confirm that the sample properties are in agreement with the literature, exhibiting electric field enhancement near the cathode under irradiation, which may cause the non-linearity at low X-ray tube anode current settings. The laser used to probe the X-ray intensity causes itself some space charge, whose spatial distribution does not seem to be exclusively determined by the incident laser position, i.e., charge carrier generation location, with respect to the electrodes.

  18. Cadmium zinc telluride based infrared interferometry for X-ray detection

    NASA Astrophysics Data System (ADS)

    Lohstroh, A.; Della Rocca, I.; Parsons, S.; Langley, A.; Shenton-Taylor, C.; Blackie, D.

    2015-02-01

    Cadmium Zinc Telluride (CZT) is a wide band gap semiconductor for room temperature radiation detection. The electro-optic Pockels effect of the material has been exploited in the past to study electric field non-uniformities and their consequence on conventional detector signals in CZT, by imaging the intensity distribution of infrared (IR) light transmitted through a device placed between crossed polarizers. Recently, quantitative monitoring of extremely high intensity neutron pulses through the change of transmitted IR intensity was demonstrated, offering the advantage to place sensitive electronics outside the measured radiation field. In this work, we demonstrate that X-ray intensity can be deduced directly from measuring the change in phase of 1550 nm laser light transmitted through a 7 × 7 × 2 mm3 CZT based Pockels cell in a simple Mach Zehnder interferometer. X-rays produced by a 50 kVp Mo X-ray tube incident on the CZT cathode surface placed at 7 mm distance cause a linearly increasing phase shift above 0.3 mA tube current, with 1.58 ± 0.02 rad per mA for an applied bias of 500 V across the 2 mm thick device. Pockels images confirm that the sample properties are in agreement with the literature, exhibiting electric field enhancement near the cathode under irradiation, which may cause the non-linearity at low X-ray tube anode current settings. The laser used to probe the X-ray intensity causes itself some space charge, whose spatial distribution does not seem to be exclusively determined by the incident laser position, i.e., charge carrier generation location, with respect to the electrodes.

  19. Development and evaluation of polycrystalline cadmium telluride dosimeters for accurate quality assurance in radiation therapy

    NASA Astrophysics Data System (ADS)

    Oh, K.; Han, M.; Kim, K.; Heo, Y.; Moon, C.; Park, S.; Nam, S.

    2016-02-01

    For quality assurance in radiation therapy, several types of dosimeters are used such as ionization chambers, radiographic films, thermo-luminescent dosimeter (TLD), and semiconductor dosimeters. Among them, semiconductor dosimeters are particularly useful for in vivo dosimeters or high dose gradient area such as the penumbra region because they are more sensitive and smaller in size compared to typical dosimeters. In this study, we developed and evaluated Cadmium Telluride (CdTe) dosimeters, one of the most promising semiconductor dosimeters due to their high quantum efficiency and charge collection efficiency. Such CdTe dosimeters include single crystal form and polycrystalline form depending upon the fabrication process. Both types of CdTe dosimeters are commercially available, but only the polycrystalline form is suitable for radiation dosimeters, since it is less affected by volumetric effect and energy dependence. To develop and evaluate polycrystalline CdTe dosimeters, polycrystalline CdTe films were prepared by thermal evaporation. After that, CdTeO3 layer, thin oxide layer, was deposited on top of the CdTe film by RF sputtering to improve charge carrier transport properties and to reduce leakage current. Also, the CdTeO3 layer which acts as a passivation layer help the dosimeter to reduce their sensitivity changes with repeated use due to radiation damage. Finally, the top and bottom electrodes, In/Ti and Pt, were used to have Schottky contact. Subsequently, the electrical properties under high energy photon beams from linear accelerator (LINAC), such as response coincidence, dose linearity, dose rate dependence, reproducibility, and percentage depth dose, were measured to evaluate polycrystalline CdTe dosimeters. In addition, we compared the experimental data of the dosimeter fabricated in this study with those of the silicon diode dosimeter and Thimble ionization chamber which widely used in routine dosimetry system and dose measurements for radiation

  20. Evaluation of fully 3-D emission mammotomography with a compact cadmium zinc telluride detector.

    PubMed

    Brzymialkiewicz, Caryl N; Tornai, Martin P; McKinley, Randolph L; Bowsher, James E

    2005-07-01

    A compact, dedicated cadmium zinc telluride (CZT) gamma camera coupled with a fully three-dimensional (3-D) acquisition system may serve as a secondary diagnostic tool for volumetric molecular imaging of breast cancers, particularly in cases when mammographic findings are inconclusive. The developed emission mammotomography system comprises a medium field-of-view, quantized CZT detector and 3-D positioning gantry. The intrinsic energy resolution, sensitivity and spatial resolution of the detector are evaluated with Tc-99m (140 keV) filled flood sources, capillary line sources, and a 3-D frequency-resolution phantom. To mimic realistic human pendant, uncompressed breast imaging, two different phantom shapes of an average sized breast, and three different lesion diameters are imaged to evaluate the system for 3-D mammotomography. Acquisition orbits not possible with conventional emission, or transmission, systems are designed to optimize the viewable breast volume while improving sampling of the breast and anterior chest wall. Complications in camera positioning about the patient necessitate a compromise in these two orbit design criteria. Image quality is evaluated with signal-to-noise ratios and contrasts of the lesions, both with and without additional torso phantom background. Reconstructed results indicate that 3-D mammotomography, incorporating a compact CZT detector, is a promising, dedicated breast imaging technique for visualization of tumors < 1 cm in diameter. Additionally, there are no outstanding trajectories that consistently yield optimized quantitative lesion imaging parameters. Qualitatively, imaging breasts with realistic torso backgrounds (out-of-field activity) substantially alters image characteristics and breast morphology unless orbits which improve sampling are utilized. In practice, the sampling requirement may be less strict than initially anticipated. PMID:16011316

  1. Development of radiation dose reduction techniques for cadmium zinc telluride detectors in molecular breast imaging

    NASA Astrophysics Data System (ADS)

    O'Connor, Michael K.; Hruska, Carrie B.; Weinmann, Amanda; Manduca, Armando; Rhodes, Deborah J.

    2010-08-01

    Background: Molecular breast imaging (MBI) is a novel breast imaging technique that uses Cadmium Zinc Telluride (CZT) gamma cameras to detect the uptake of Tc-99m sestamibi in breast tumors. Current techniques employ an administered dose of 20-30 mCi Tc-99m, delivering an effective dose of 6.5-10 mSv to the body. This is ~ 5-10 times that of mammography. The goal of this study was to reduce the radiation dose by a factor of 5-10, while maintaining image quality. Methods: A total of 4 dose reduction schemes were evaluated - a) optimized collimation, b) improved utilization of the energy spectrum below the photopeak, c) adaptive geometric mean algorithm developed for combination of images from opposing detectors, and d) non local means filtering (NLMF) for noise reduction and image enhancement. Validation of the various schemes was performed using a breast phantom containing a variety of tumors and containing activity matched to that observed in clinical studies. Results: Development of tungsten collimators with holes matched to the CZT pixels yielded a 2.1-2.9 gain in system sensitivity. Improved utilization of the energy spectra yielded a 1.5-2.0 gain in sensitivity. Development of a modified geometric mean algorithm yielded a 1.4 reduction in image noise, while retaining contrast. Images of the breast phantom demonstrated that a factor of 5 reduction in dose was achieved. Additional refinements to the NLMF should enable an additional factor of 2 reduction in dose. Conclusion: Significant dose reduction in MBI to levels comparable to mammography can be achieved while maintaining image quality.

  2. Bulk Dissolution Rates of Cadmium and Bismuth Tellurides As a Function of pH, Temperature and Dissolved Oxygen.

    PubMed

    Biver, Marc; Filella, Montserrat

    2016-05-01

    The toxicity of Cd being well established and that of Te suspected, the bulk, surface-normalized steady-state dissolution rates of two industrially important binary tellurides-polycrystalline cadmium and bismuth tellurides- were studied over the pH range 3-11, at various temperatures (25-70 °C) and dissolved oxygen concentrations (0-100% O2 in the gas phase). The behavior of both tellurides is strikingly different. The dissolution rates of CdTe monotonically decreased with increasing pH, the trend becoming more pronounced with increasing temperature. Activation energies were of the order of magnitude associated with surface controlled processes; they decreased with decreasing acidity. At pH 7, the CdTe dissolution rate increased linearly with dissolved oxygen. In anoxic solution, CdTe dissolved at a finite rate. In contrast, the dissolution rate of Bi2Te3 passed through a minimum at pH 5.3. The activation energy had a maximum in the rate minimum at pH 5.3 and fell below the threshold for diffusion control at pH 11. No oxygen dependence was detected. Bi2Te3 dissolves much more slowly than CdTe; from one to more than 3.5 orders of magnitude in the Bi2Te3 rate minimum. Both will readily dissolve under long-term landfill deposition conditions but comparatively slowly. PMID:27043466

  3. Electronic Characterization of Defects in Narrow Gap Semiconductors-Comparison of Electronic Energy Levels and Formation Energies in Mercury Cadmium Telluride, Mercury Zinc Telluride, and Mercury Zinc Selenide

    NASA Technical Reports Server (NTRS)

    Patterson, James D.

    1996-01-01

    We have used a Green's function technique to calculate the energy levels and formation energy of deep defects in the narrow gap semiconductors mercury cadmium telluride (MCT), mercury zinc telluride (MZT) and mercury zinc selenide (MZS). The formation energy is calculated from the difference between the total energy with an impurity cluster and the total energy for the perfect crystal. Substitutional (including antisite), interstitial (self and foreign), and vacancy deep defects are considered. Relaxation effects are calculated (with molecular dynamics). By use of a pseudopotential, we generalize the ideal vacancy model so as to be able to consider relaxation for vacancies. Different charge states are considered and the charged state energy shift (as computed by a modified Haldane-Anderson model) can be twice that due to relaxation. Different charged states for vacancies were not calculated to have much effect on the formation energy. For all cases we find deep defects in the energy gap only for cation site s-like orbitals or anion site p-like orbitals, and for the substitutional case only the latter are appreciably effected by relaxation. For most cases for MCT, MZT, MZS, we consider x (the concentration of Cd or Zn) in the range appropriate for a band gap of 0.1 eV. For defect energy levels, the absolute accuracy of our results is limited, but the precision is good, and hence chemical trends are accurately predicted. For the same reason, defect formation energies are more accurately predicted than energy level position. We attempt, in Appendix B, to calculate vacancy formation energies using relatively simple chemical bonding ideas due to Harrison. However, these results are only marginally accurate for estimating vacancy binding energies. Appendix C lists all written reports and publications produced for the grant. We include abstracts and a complete paper that summarizes our work which is not yet available.

  4. Microbial toxicity of ionic species leached from the II-VI semiconductor materials, cadmium telluride (CdTe) and cadmium selenide (CdSe).

    PubMed

    Ramos-Ruiz, Adriana; Zeng, Chao; Sierra-Alvarez, Reyes; Teixeira, Luiz H; Field, Jim A

    2016-11-01

    This work investigated the microbial toxicity of soluble species that can potentially be leached from the II-VI semiconductor materials, cadmium telluride and cadmium selenide. The soluble ions tested included: cadmium, selenite, selenate, tellurite, and tellurate. Their toxicity towards the acetoclastic and hydrogen-consuming trophic groups in a methanogenic consortium as well as towards a bioluminescent marine bacterium, Aliivibrio fischeri (Microtox(®) test), was assessed. The acetoclastic methanogenic activity was the most affected as evidenced by the low 50% inhibiting concentrations (IC50) values obtained of 8.6 mg L(-1) for both cadmium and tellurite, 10.2 mg L(-1) for tellurate, and 24.1 mg L(-1) for selenite. Both tellurium oxyanions caused a strong inhibition of acetoclastic methanogenesis at low concentrations, each additional increment in concentration provided progressively less inhibition increase. In the case of the hydrogenotrophic methanogenesis, cadmium followed by selenite caused the greatest inhibition with IC50 values of 2.9 and 18.0 mg L(-1), respectively. Tellurite caused a moderate effect as evidenced by a 36.8% inhibition of the methanogenic activity at the highest concentration tested, and a very mild effect of tellurate was observed. Microtox(®) analyses showed a noteworthy inhibition of cadmium, selenite, and tellurite with 50% loss in bioluminescence after 30 min of exposure of 5.5, 171.1, and 458.6 mg L(-1), respectively. These results suggest that the leaching of cadmium, tellurium and selenium ions from semiconductor materials can potentially cause microbial toxicity. PMID:27494313

  5. Mercury Loss, Annealing and Ion Implantation in Mercury-Cadmium - Telluride.

    NASA Astrophysics Data System (ADS)

    Dimiduk, Kathryn Conway

    Mercury Cadmium Telluride (HG(,1-x)Cd(,x)Te) is a variable bandgap semiconductor that has important applications as an infrared detector. However, its processing is hampered by defect doping and Hg loss at low temperatures. This work reports studies of the HG loss and applies the information to annealing of epitaxial Hg(,1-x)Cd(,x)Te. Samples of Hg(,1-x)Cd(,x)Te of various compositions were heated to 250-430(DEGREES)C for times of 3-500 seconds in a thermal pulse annealing system. Rutherford backscattering spectrometry (RBS) with MeV He ions can resolve near surface Hg atoms from Cd and Te atoms. The Hg lost from these anneals can therefore be quantified by taking the difference of RBS spectra obtained before and after heating. An empirical fit to the equation Hg atoms lost/cm('2)-sec = A exp ( -(DELTA)E/kT) was found, where A and (DELTA)E depend on composition and surface preparation and k and T are Boltzmann's constant and temperature respectively. Various models for Hg loss are discussed and the binding energy of Hg in Hg(,1-x)Cd(,x)Te is computed. The above measurements provide the basis for determining the temperature-time trade off in Hg loss when annealing uncapped HgCdTe. The thermal pulse annealing system has permitted access to a regime intermediate between that of furnaces and lasers. Anneals at 260(DEGREES)C for 7 -8 seconds were found to improve the crystal quality of as grown epitaxial Hg(,.64)Cd(,.36)Te as observed by MeV He ion channeling. Similar anneals also repaired the crystal damage caused by a 250 keV 10('15)/cm('2) ('11)B implant into epitaxial HgCdTe held at LN(,2) temperatures. Van der Pauw Hall measurements showed type conversion following implantation, and increased mobility and carrier concentrations following annealing. A diode fabricated in this material exhibited a very sharp I-V curve with reverse breakdown occurring at 12 V and an R(,0)A of (GREATERTHEQ) 10('7) (OMEGA) cm('2) at 77K. Preliminary results obtained using SnO(,2) and Cd

  6. Thermodynamics of post-growth annealing of cadmium zinc telluride nuclear radiation detectors

    NASA Astrophysics Data System (ADS)

    Adams, Aaron Lee

    Nuclear Radiation Detectors are used for detecting, tracking, and identifying radioactive materials which emit high-energy gamma and X-rays. The use of Cadmium Zinc Telluride (CdZnTe) detectors is particularly attractive because of the detector's ability to operate at room temperature and measure the energy spectra of gamma-ray sources with a high resolution, typically less than 1% at 662 keV. While CdZnTe detectors are acceptable imperfections in the crystals limit their full market potential. One of the major imperfections are Tellurium inclusions generated during the crystal growth process by the retrograde solubility of Tellurium and Tellurium-rich melt trapped at the growth interface. Tellurium inclusions trap charge carriers generated by gamma and X-ray photons and thus reduce the portion of generated charge carriers that reach the electrodes for collection and conversion into a readable signal which is representative of the ionizing radiation's energy and intensity. One approach in resolving this problem is post-growth annealing which has the potential of removing the Tellurium inclusions and associated impurities. The goal of this project is to use experimental techniques to study the thermodynamics of Tellurium inclusion migration in post-growth annealing of CdZnTe nuclear detectors with the temperature gradient zone migration (TGZM) technique. Systematic experiments will be carried out to provide adequate thermodynamic data that will inform the engineering community of the optimum annealing parameters. Additionally, multivariable correlations that involve the Tellurium diffusion coefficient, annealing parameters, and CdZnTe properties will be analyzed. The experimental approach will involve systematic annealing experiments (in Cd vapor overpressure) on different sizes of CdZnTe crystals at varying temperature gradients ranging from 0 to 60°C/mm (used to migrate the Tellurium inclusion to one side of the crystal), and at annealing temperatures ranging

  7. A rapid and sensitive assay for determination of doxycycline using thioglycolic acid-capped cadmium telluride quantum dots

    NASA Astrophysics Data System (ADS)

    Tashkhourian, Javad; Absalan, Ghodratollah; Jafari, Marzieh; Zare, Saber

    2016-01-01

    A rapid, simple and inexpensive spectrofluorimetric sensor for determination of doxycycline based on its interaction with thioglycolic acid-capped cadmium telluride quantum dots (TGA/CdTe QDs) has been developed. Under the optimum experimental conditions, the sensor exhibited a fast response time of <10 s. The results revealed that doxycycline could quench the fluorescence of TGA/CdTe QDs via electron transfer from the QDs to doxycycline through a dynamic quenching mechanism. The sensor permitted determination of doxycycline in a concentration range of 1.9 × 10-6-6.1 × 10-5 mol L-1 with a detection limit of 1.1 × 10-7 mol L-1. The sensor was applied for determination of doxycycline in honey and human serum samples.

  8. Opto-electrical characterization and X-ray mapping of large-volume cadmium zinc telluride radiation detectors

    SciTech Connect

    Yang, G.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Hossain, A.; Yao, H.W.; Kim, K.; and James, R.B.

    2009-04-13

    Large-volume cadmium zinc telluride (CZT) radiation detectors would greatly improve radiation detection capabilities and, therefore, attract extensive scientific and commercial interests. CZT crystals with volumes as large as hundreds of centimeters can be achieved today due to improvements in the crystal growth technology. However, the poor performance of large-volume CZT detectors is still a challenging problem affecting the commercialization of CZT detectors and imaging arrays. We have employed Pockels effect measurements and synchrotron X-ray mapping techniques to investigate the performance-limiting factors for large-volume CZT detectors. Experimental results with the above characterization methods reveal the non-uniform distribution of internal electric field of large-volume CZT detectors, which help us to better understand the responsible mechanism for the insufficient carrier collection in large-volume CZT detectors.

  9. A rapid and sensitive assay for determination of doxycycline using thioglycolic acid-capped cadmium telluride quantum dots.

    PubMed

    Tashkhourian, Javad; Absalan, Ghodratollah; Jafari, Marzieh; Zare, Saber

    2016-01-01

    A rapid, simple and inexpensive spectrofluorimetric sensor for determination of doxycycline based on its interaction with thioglycolic acid-capped cadmium telluride quantum dots (TGA/CdTe QDs) has been developed. Under the optimum experimental conditions, the sensor exhibited a fast response time of <10s. The results revealed that doxycycline could quench the fluorescence of TGA/CdTe QDs via electron transfer from the QDs to doxycycline through a dynamic quenching mechanism. The sensor permitted determination of doxycycline in a concentration range of 1.9×10(-6)-6.1×10(-5)molL(-1) with a detection limit of 1.1×10(-7)molL(-1). The sensor was applied for determination of doxycycline in honey and human serum samples. PMID:26204505

  10. Crystal Growth, Characterization and Fabrication of Cadmium Zinc Telluride-based Nuclear Detectors

    NASA Astrophysics Data System (ADS)

    Krishna, Ramesh M.

    In today's world, nuclear radiation is seeing more and more use by humanity as time goes on. Nuclear power plants are being built to supply humanity's energy needs, nuclear medical imaging is becoming more popular for diagnosing cancer and other diseases, and control of weapons-grade nuclear materials is becoming more and more important for national security. All of these needs require high-performance nuclear radiation detectors which can accurately measure the type and amount of radiation being used. However, most current radiation detection materials available commercially require extensive cooling, or simply do not function adequately for high-energy gamma-ray emitting nuclear materials such as uranium and plutonium. One of the most promising semiconductor materials being considered to create a convenient, field-deployable nuclear detector is cadmium zinc telluride (CdZnTe, or CZT). CZT is a ternary semiconductor compound which can detect high-energy gamma-rays at room temperature. It offers high resistivity (≥ 1010 O-cm), a high band gap (1.55 eV), and good electron transport properties, all of which are required for a nuclear radiation detector. However, one significant issue with CZT is that there is considerable difficulty in growing large, homogeneous, defect-free single crystals of CZT. This significantly increases the cost of producing CZT detectors, making CZT less than ideal for mass-production. Furthermore, CZT suffers from poor hole transport properties, which creates significant problems when using it as a high-energy gamma-ray detector. In this dissertation, a comprehensive investigation is undertaken using a successful growth method for CZT developed at the University of South Carolina. This method, called the solvent-growth technique, reduces the complexity required to grow detector-grade CZT single crystals. It utilizes a lower growth temperature than traditional growth methods by using Te as a solvent, while maintaining the advantages of

  11. Bulk growth and surface characterization of epitaxy ready cadmium zinc telluride substrates for use in IR imaging applications

    NASA Astrophysics Data System (ADS)

    Flint, J. P.; Martinez, B.; Betz, T. E. M.; MacKenzie, J.; Kumar, F. J.; Bindley, G.

    2016-05-01

    Cadmium Zinc Telluride (CZT) is an important compound semiconductor material upon which Mercury Cadmium Telluride (MCT) layers are deposited epitaxially to form structures that are used in high performance detectors covering a wide infrared (IR) spectral band. The epitaxial growth of high quality MCT layers presents many technical challenges and a critical determinant of material performance is the quality of the underlying bulk CZT substrate. CZT itself is a difficult material to manufacture where traditional methods of bulk growth are complex and low yielding, which constrains the supply of commercially available substrates. In this work we report on the epitaxy-ready finishing of Travelling Heather Method (THM) grown Cd0.96Zn0.04Te substrates. The THM method is well established for the growth of high quality CZT crystals used in nuclear, X-ray and spectroscopic imaging applications and in this work we demonstrate the application of this technique to the growth of IR specification CZT substrates with areas of up to 5 cm x 5 cm square. We will discuss the advantages of the THM method over alternative methods of bulk CZT growth where the high yield and material uniformity advantages of this technique will be demonstrated. Chemo-mechanical polishing (CMP) of 4 cm x 4 cm CZT substrates reveals that III-V (InSb/GaSb) like levels of epitaxy-ready surface finishing may be obtained with modified process chemistries. Surface quality assessments will be made by various surface analytical and microscopy techniques from which the suitability of the material for subsequent assessment of quality by epitaxial growth will be ascertained.

  12. Measurement of the electrical properties of a polycrystalline cadmium telluride for direct conversion flat panel x-ray detector

    NASA Astrophysics Data System (ADS)

    Oh, K. M.; kim, D. K.; Shin, J. W.; Heo, S. U.; Kim, J. S.; Park, J. G.; Nam, S. H.

    2014-01-01

    Cadmium telluride (CdTe) is one of the best candidate direct conversion material for medical X-ray application because it satisfies the requirements of direct conversion x-ray material such as high atomic absorption, density, bandgap energy, work fuction, and resistivity. With such properties, single crystal CdTe exhibits high quantum efficiency and charge collection efficiency. However, for the development of low-cost large area detector, the study of the improvement of polycrystalline CdTe property is desirable. In this study, in order to improve the properties of polycrystalline CdTe, we produced polycrystalline CdTe with different kinds of raw materials, high purity Cd and Te powder compounds and bulk CdTe compound synthesized from single crystal CdTe. The electric properties including resistivity, x-ray sensitivity, and charge transport properties were investigated. As a result, polycrystalline CdTe exhibited simular level of resistivity and x-ray sensitivity to single crystal CdTe. The carrier transport properties of polycrystalline CdTe showed poorer properties than those of single crystal CdTe due to significant charge trapping. However, the polycrystalline CdTe fabricated with bulk CdTe compound synthesized from single crystal CdTe showed better charge transport properties than the polycrystalline CdTe fabricated with CdTe powder compounds. This is suitable for diagnostic x-ray detectors, especially for digital fluoroscopy.

  13. Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses

    SciTech Connect

    Carcelen, V.; Rodriguez-Fernandez, J.; Dieguez, E.; Hidalgo, P.

    2010-05-15

    The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concentrations (8 and 14 at. %) by the Bridgman oscillation method, in which one experiment has been carried out with a platinum (Pt) tube as the ampoule support. Pt also acts as a cold finger and reduces the growth velocity and enhances crystalline perfection. The grown single crystals have been studied with different analysis methods. The stoichiometry was confirmed by energy dispersive by x-ray and inductively coupled plasma mass spectroscopy analyses and it was found there is no incorporation of impurities in the grown crystal. The presence of Cd and Te vacancies was determined by cathodoluminescence studies. Electrical properties were assessed by I-V analysis and indicated higher resistive value (8.53x10{sup 8} {Omega} cm) for the crystal grown with higher zinc concentration (with Cd excess) compare to the other (3.71x10{sup 5} {Omega} cm).

  14. The prospects for traveling magnetic fields to affect interface shape in the vertical gradient freeze growth of cadmium zinc telluride

    NASA Astrophysics Data System (ADS)

    Yeckel, Andrew; Derby, Jeffrey J.

    2013-02-01

    The influence of a traveling magnetic field (TMF) on vertical gradient freeze (VGF) growth of cadmium zinc telluride (CZT) is studied using a coupled model of magnetic induction, fluid dynamics, and heat transfer. Simulations are performed to determine the influences of current, phase shift, and frequency on melt flow and growth interface shape. A downward traveling electromagnetic wave drives flow downward at the wall, which tends to flatten the interface, whereas an upward traveling wave has the opposite effect. An optimum phase shift that maximizes Lorentz force is found to depend only on system geometry. Large currents (˜300 A) and high frequencies (˜500 Hz) make a significant impact on interface shape in the absence of thermal buoyancy, but are ineffectual under realistic conditions in a 4 in.-diameter ampoule, for which buoyancy dominates Lorentz force throughout the melt. The results indicate that interface shape in this CZT growth system is strongly governed by furnace heat transfer and is difficult to modify by TMF-driven forced convection.

  15. On the effects of furnace gradients on interface shape during the growth of cadmium zinc telluride in EDG furnaces

    NASA Astrophysics Data System (ADS)

    Lun, Lisa; Yeckel, Andrew; Reed, Michael; Szeles, Csaba; Daoutidis, Prodromos; Derby, Jeffrey J.

    2006-04-01

    Numerical simulations are performed to assess cadmium zinc telluride (CZT) interface shape dependency on thermal gradients in electrodynamic gradient (EDG) furnaces. Results explain how larger furnace gradients in these systems tend to flatten the shape of the solid-liquid interface. Convection dominates heat transfer through the melt, and mixing acts to radially homogenize the melt temperature field. These features do not significantly change with gradient conditions. In contrast, changing the rate of heat conduction through the solid, notably via changes to the furnace profile adjacent to the crystal, have an overriding influence on the interface shape. Increased gradients increase the ability for latent heat to be transported axially through the crystal and flatten the interface; however, the sensitivity of the shape of the interface to details of the furnace heating profile decreases as overall gradients increase. The engineering of the interface shape in these systems via subtle control of the furnace should be possible, but rational design changes will require the insight obtained from predictive models.

  16. Liver Toxicity of Cadmium Telluride Quantum Dots (CdTe QDs) Due to Oxidative Stress in Vitro and in Vivo

    PubMed Central

    Zhang, Ting; Hu, Yuanyuan; Tang, Meng; Kong, Lu; Ying, Jiali; Wu, Tianshu; Xue, Yuying; Pu, Yuepu

    2015-01-01

    With the applications of quantum dots (QDs) expanding, many studies have described the potential adverse effects of QDs, yet little attention has been paid to potential toxicity of QDs in the liver. The aim of this study was to investigate the effects of cadmium telluride (CdTe) QDs in mice and murine hepatoma cells alpha mouse liver 12 (AML 12). CdTe QDs administration significantly increased the level of lipid peroxides marker malondialdehyde (MDA) in the livers of treated mice. Furthermore, CdTe QDs caused cytotoxicity in AML 12 cells in a dose- and time-dependent manner, which was likely mediated through the generation of reactive oxygen species (ROS) and the induction of apoptosis. An increase in ROS generation with a concomitant increase in the gene expression of the tumor suppressor gene p53, the pro-apoptotic gene Bcl-2 and a decrease in the anti-apoptosis gene Bax, suggested that a mitochondria mediated pathway was involved in CdTe QDs’ induced apoptosis. Finally, we showed that NF-E2-related factor 2 (Nrf2) deficiency blocked induced oxidative stress to protect cells from injury induced by CdTe QDs. These findings provide insights into the regulatory mechanisms involved in the activation of Nrf2 signaling that confers protection against CdTe QDs-induced apoptosis in hepatocytes. PMID:26404244

  17. A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Guo, Dongming; Kang, Renke; Zhang, Bi

    2016-03-01

    A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness Ra, and peak-to-valley (PV) values of 0.45, and 4.74 nm are achieved, respectively on MCT wafers after CMP. The first and second passivating processes are observed in electrochemical measurements on MCT wafers. The fundamental mechanisms of CMP are proposed according to the X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Malic and citric acids dominate the first passivating process, and the CMP slurry governs the second process. Te4+3d peaks are absent after CMP induced by the developed CMP slurry, indicating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2 and malic and citric acids solutions.

  18. A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors

    PubMed Central

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Guo, Dongming; Kang, Renke; Zhang, Bi

    2016-01-01

    A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness Ra, and peak-to-valley (PV) values of 0.45, and 4.74 nm are achieved, respectively on MCT wafers after CMP. The first and second passivating processes are observed in electrochemical measurements on MCT wafers. The fundamental mechanisms of CMP are proposed according to the X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Malic and citric acids dominate the first passivating process, and the CMP slurry governs the second process. Te4+3d peaks are absent after CMP induced by the developed CMP slurry, indicating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2 and malic and citric acids solutions. PMID:26926622

  19. A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors.

    PubMed

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Guo, Dongming; Kang, Renke; Zhang, Bi

    2016-01-01

    A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness Ra, and peak-to-valley (PV) values of 0.45, and 4.74 nm are achieved, respectively on MCT wafers after CMP. The first and second passivating processes are observed in electrochemical measurements on MCT wafers. The fundamental mechanisms of CMP are proposed according to the X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Malic and citric acids dominate the first passivating process, and the CMP slurry governs the second process. Te(4+)3d peaks are absent after CMP induced by the developed CMP slurry, indicating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2 and malic and citric acids solutions. PMID:26926622

  20. The 3-5 semiconductor solid solution single crystal growth. [low gravity float zone growth experiments using gallium indium antimonides and cadmium tellurides

    NASA Technical Reports Server (NTRS)

    Gertner, E. R.

    1980-01-01

    Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

  1. High efficiency cadmium and zinc telluride-based thin film solar cells

    SciTech Connect

    Rohatgi, A.; Summers, C.J.; Erbil, A.; Sudharsanan, R.; Ringel, S. . School of Electrical Engineering)

    1990-10-01

    Polycrystalline Cd{sub 1-x}Zn{sub x}Te and Cd{sub 1-x}Mn{sub x}Te films with a band gap of 1.7 eV were successfully grown on glass/SnO{sub 2}/CdS substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Polycrystalline Cd{sub 1-x}Zn{sub x}Te films grown by MBE resulted in uniform composition and sharp interfaces. However, polycrystalline Cd{sub 1-x}Mn{sub x}Te films grown by MOCVD showed nonuniform compositions and evidence of manganese accumulation at the Cd{sub 1-x}Mn{sub x}Te/CdS interface. We found that manganese interdiffuses and replaces cadmium in the CdS film. By improving the CdTe/CdS interface and, thus, reducing the collection function effects, the efficiency of the MOCVD CdTe cell can be improved to about 13.5%. MBE-grown CdTe cells also produced 8%--9% efficiencies. The standard CdTe process was not optimum for ternary films and resulted in a decrease in the band gap. Recent results indicate that CdCl{sub 2} + ZnCl{sub 2} chemical treatment may prevent the band-gap reduction, and that chromate etch (rather than bromine etch) may provide the solution to contact resistance in the ternary cells.

  2. High efficiency cadmium and zinc telluride-based thin film solar cells

    NASA Astrophysics Data System (ADS)

    Rohatgi, A.; Summers, C. J.; Erbil, A.; Sudharsanan, R.; Ringel, S.

    1990-10-01

    Polycrystalline Cd(1-x)Zn(x)Te and Cd(1-x)Mn(x)Te films with a band gap of 1.7 eV were successfully grown on glass/SnO2/CdS substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Polycrystalline Cd(1-x)Zn(x)Te films grown by MBE resulted in uniform composition and sharp interfaces. However, polycrystalline Cd(1-x)Mn(x)Te films grown by MOCVD showed nonuniform compositions and evidence of manganese accumulation at the Cd(1-x)Mn(x)Te/CdS interface. We found that manganese interdiffuses and replaces cadmium in the CdS film. By improving the CdTe/CdS interface and, thus, reducing the collection function effects, the efficiency of the MOCVD CdTe cell can be improved to about 13.5 percent. MBE-grown CdTe cells also produced 8 to 9 percent efficiencies. The standard CdTe process was not optimum for ternary films and resulted in a decrease in the band gap. Recent results indicate that CdCl2 + ZnCl2 chemical treatment may prevent the band-gap reduction, and that chromate etch (rather than bromine etch) may provide the solution to contact resistance in the ternary cells.

  3. Effects of contact-based non-uniformities in cadmium sulfide/cadmium telluride thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Davies, Alan R.

    To strongly contribute to the near-term electricity supply, CdTe-based photovoltaic devices must continue to improve in performance under the constraint of simple and cost efficient fabrication methods. This dissertation focuses on characterization and modeling of devices with non-uniform performance induced by the cell contacts. Devices were obtained from a commercially viable pilot-scale fabrication system at Colorado State University. Current versus voltage (J-V), quantum efficiency (QE) and laser-beam-induced current (LBIC) were the main characterization techniques applied in this work. The p-type CdTe semiconductor has a large work-function and thus tends to form a Schottky barrier when the back-electrode is formed. A common strategy of mitigating the performance-limiting contact barrier is to prepare the CdTe surface with a chemical etch, and include Cu to reduce the effective barrier. Non-uniformity of the etch or Cu inclusion, or insufficient application of Cu can result in a non-uniform contact, with regions of high- and low-energy Schottky barriers participating in the cell performance. Barrier non-uniformities in devices with little or no Cu were identified with the LBIC measurement and a model for their influence was developed and tested using PSpice circuit modeling software. Because of their superstrate configuration, CdTe cells feature front contacts made from transparent-conducting oxides (TCOs). Fluorine-doped tin oxide (F:SnO2) is a common choice because of its availability and acceptable optical and electrical properties. When the n-CdS layer of the CdS/CdTe structure is thinned to encourage greater current generation, non-uniformities of the solar cell junction arise, as CdTe comes into sporadic contact with the TCO layer. Device simulations suggest that the SnO2/CdTe junction is weaker than CdS/CdTe because of a large conduction-band offset induced by the differing electron affinities in the heterojunction. LBIC was used to verify increasing

  4. Cadmium zinc telluride (CZT) nanowire sensors for detection of low energy gamma-ray detection

    NASA Astrophysics Data System (ADS)

    Gandhi, T.; Raja, K. S.; Misra, M.

    2008-04-01

    Bulk single crystals of CdZnTe compound semiconductor is used for room temperature radiation detection in commercial radiation sensors. A large volume of detector material with low defect density is required for increasing the detection efficiency. Manufacture of such a bulky detector-quality material with low defect density is expensive. In this communication, synthesis of nanowires arrays of CdZnTe that can be used for detecting low energy radiation is reported for the first time. CdZnTe ternary compound semiconductor, referred as CZT, was electrodeposited in the form of nanowires onto a TiO II nanotubular template in non-aqueous electrolytes using a pulse-reverse process at 130 °C. Very high electrical resistivity of the CZT nanowires (in the order of 10 10 Ω-cm) was obtained. Such a high resistivity was attributed to the presence of deep defect states such as cadmium vacancies created by the anodic cycle of the pulse-reverse electrodeposition process. Stacks of series connected CZT nanowire arrays were impressed with different bias potentials. The leakage current was in the order of tens of PicoAmperes. When exposed to a radiation source (Am -241, 60 keV), the current flow in the circuit increased. The preliminary results indicate that the CZT nanowire arrays can be used as radiation detector materials at room temperature with a much low bias potential (0.7 - 2.3 V) as against 300 - 500 V applied to the bulk detector materials.

  5. Polycrystalline thin film photovoltaic technology

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  6. Cadmium Manganese Telluride (Cd1-xMnxTe): A potential material for room-temperature radiation detectors

    SciTech Connect

    Hossain, A.; Cui, Y.; Bolotnikov, A.; Camarda, G.; Yang, G.; Kim, K-H.; Gul, R.; Xu, L.; Li, L.; Mycielski, A.; and James, R.B.

    2010-07-11

    Cadmium Manganese Telluride (CdMnTe) recently emerged as a promising material for room-temperature X- and gamma-ray detectors. It offers several potential advantages over CdZnTe. Among them is its optimal tunable band gap ranging from 1.7-2.2 eV, and its relatively low (< 50%) content of Mn compared to that of Zn in CdZnTe that assures this favorable band-gap range. Another important asset is the segregation coefficient of Mn in CdTe that is approximately unity compared to 1.35 for Zn in CdZnTe, so ensuring the homogenous distribution of Mn throughout the ingot; hence, a large-volume stoichiometric yield is attained. However, some materials issues primarily related to the growth process impede the production of large, defect-free single crystals. The high bond-ionicity of CdMnTe entails a higher propensity to crystallize into a hexagonal structure rather than to adopt the expected zinc-blend structure, which is likely to generate twins in the crystals. In addition, bulk defects generate in the as-grown crystals due to the dearth of high-purity Mn, which yields a low-resistivity material. In this presentation, we report on our observations of such material defects in current CdMnTe materials, and our evaluation of its potential as an alternative detector material to the well-known CdZnTe detectors. We characterized the bulk defects of several indium- and vanadium-doped Cd1-xMnxTe crystals by using several advanced techniques, viz., micro-scale mapping, white-beam x-ray diffraction/reflection topography, and chemical etching. Thereafter, we fabricated some detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Our experimental results indicate that CdMnTe materials could well prove to become a viable alternative in the near future.

  7. Investigating the effect of characteristic x-rays in cadmium zinc telluride detectors under breast computerized tomography operating conditions

    SciTech Connect

    Glick, Stephen J.; Didier, Clay

    2013-10-14

    A number of research groups have been investigating the use of dedicated breast computerized tomography (CT). Preliminary results have been encouraging, suggesting an improved visualization of masses on breast CT as compared to conventional mammography. Nonetheless, there are many challenges to overcome before breast CT can become a routine clinical reality. One potential improvement over current breast CT prototypes would be the use of photon counting detectors with cadmium zinc telluride (CZT) (or CdTe) semiconductor material. These detectors can operate at room temperature and provide high detection efficiency and the capability of multi-energy imaging; however, one factor in particular that limits image quality is the emission of characteristic x-rays. In this study, the degradative effects of characteristic x-rays are examined when using a CZT detector under breast CT operating conditions. Monte Carlo simulation software was used to evaluate the effect of characteristic x-rays and the detector element size on spatial and spectral resolution for a CZT detector used under breast CT operating conditions. In particular, lower kVp spectra and thinner CZT thicknesses were studied than that typically used with CZT based conventional CT detectors. In addition, the effect of characteristic x-rays on the accuracy of material decomposition in spectral CT imaging was explored. It was observed that when imaging with 50-60 kVp spectra, the x-ray transmission through CZT was very low for all detector thicknesses studied (0.5–3.0 mm), thus retaining dose efficiency. As expected, characteristic x-ray escape from the detector element of x-ray interaction increased with decreasing detector element size, approaching a 50% escape fraction for a 100 μm size detector element. The detector point spread function was observed to have only minor degradation with detector element size greater than 200 μm and lower kV settings. Characteristic x-rays produced increasing distortion in

  8. Investigating the effect of characteristic x-rays in cadmium zinc telluride detectors under breast computerized tomography operating conditions

    NASA Astrophysics Data System (ADS)

    Glick, Stephen J.; Didier, Clay

    2013-10-01

    A number of research groups have been investigating the use of dedicated breast computerized tomography (CT). Preliminary results have been encouraging, suggesting an improved visualization of masses on breast CT as compared to conventional mammography. Nonetheless, there are many challenges to overcome before breast CT can become a routine clinical reality. One potential improvement over current breast CT prototypes would be the use of photon counting detectors with cadmium zinc telluride (CZT) (or CdTe) semiconductor material. These detectors can operate at room temperature and provide high detection efficiency and the capability of multi-energy imaging; however, one factor in particular that limits image quality is the emission of characteristic x-rays. In this study, the degradative effects of characteristic x-rays are examined when using a CZT detector under breast CT operating conditions. Monte Carlo simulation software was used to evaluate the effect of characteristic x-rays and the detector element size on spatial and spectral resolution for a CZT detector used under breast CT operating conditions. In particular, lower kVp spectra and thinner CZT thicknesses were studied than that typically used with CZT based conventional CT detectors. In addition, the effect of characteristic x-rays on the accuracy of material decomposition in spectral CT imaging was explored. It was observed that when imaging with 50-60 kVp spectra, the x-ray transmission through CZT was very low for all detector thicknesses studied (0.5-3.0 mm), thus retaining dose efficiency. As expected, characteristic x-ray escape from the detector element of x-ray interaction increased with decreasing detector element size, approaching a 50% escape fraction for a 100 μm size detector element. The detector point spread function was observed to have only minor degradation with detector element size greater than 200 μm and lower kV settings. Characteristic x-rays produced increasing distortion in the

  9. Size and temperature dependence of the photoluminescence properties of NIR emitting ternary alloyed mercury cadmium telluride quantum dots

    NASA Astrophysics Data System (ADS)

    Jagtap, Amardeep M.; Chatterjee, Abhijit; Banerjee, Arup; Babu Pendyala, Naresh; Koteswara Rao, K. S. R.

    2016-04-01

    Exciton-phonon coupling and nonradiative relaxation processes have been investigated in near-infrared (NIR) emitting ternary alloyed mercury cadmium telluride (CdHgTe) quantum dots. Organically capped CdHgTe nanocrystals of sizes varying from 2.5-4.2 nm have been synthesized where emission is in the NIR region of 650-855 nm. Temperature-dependent (15-300 K) photoluminescence (PL) and the decay dynamics of PL at 300 K have been studied to understand the photophysical properties. The PL decay kinetics shows the transition from triexponential to biexponential on increasing the size of the quantom dots (QDs), informing the change in the distribution of the emitting states. The energy gap is found to be following the Varshni relation with a temperature coefficient of 2.1-2.8  ×  10-4 eV K-1. The strength of the electron-phonon coupling, which is reflected in the Huang and Rhys factor S, is found in the range of 1.17-1.68 for QDs with a size of 2.5-4.2 nm. The integrated PL intensity is nearly constant until 50 K, and slowly decreases up to 140 K, beyond which it decreases at a faster rate. The mechanism for PL quenching with temperature is attributed to the presence of nonradiative relaxation channels, where the excited carriers are thermally stimulated to the surface defect/trap states. At temperatures of different region (<140 K and 140-300 K), traps of low (13-25 meV) and high (65-140 meV) activation energies seem to be controlling the quenching of the PL emission. The broadening of emission linewidth is found to due to exciton-acoustic phonon scattering and exciton-longitudinal optical (LO) phonon coupling. The exciton-acoustic phonon scattering coefficient is found to be enhanced up to 55 μeV K-1 due to a stronger confinement effect. These findings give insight into understanding the photophysical properties of CdHgTe QDs and pave the way for their possible applications in the fields of NIR photodetectors and other optoelectronic devices.

  10. Environmentally responsible recycling of thin-film cadmium telluride photovoltaic modules. Final technical report

    SciTech Connect

    Bohland, John

    2002-09-09

    Continuing from the third quarter, all technical objectives of this Phase II SBIR work were previously and successfully completed. This report is therefore brief and contains two elements (1) a comparison of technical objective accomplishments to the stated goals in the original grant proposal (2) a summary of the third key element of this work; a market analysis for the developed recycling technology systems.

  11. Thin film cadmium telluride photovoltaic cells. Annual subcontract report, 23 July 1990--31 October 1991

    SciTech Connect

    Compaan, A.; Bohn, R.

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  12. Thin film cadmium telluride photovoltaic cells. Annual subcontract report, 1 November 1991--31 October 1992

    SciTech Connect

    Compaan, C.D.; Bohn, R.G.

    1993-10-01

    This report describes work to develop and optimize radio-frequency (RF) sputtering and laser-driven physical vapor deposition (LDPVD) for CdTe-based thin-film solar cells. Both of these techniques are vacuum-based and share several other common physical principles. However, they differ somewhat in the typical kinetic energies of Cd, Te, and S that impact on the growth surface. The values of several processing parameters-optimized with the LDPVD technique-were taken as starting values for the RF sputtering method. We completed an initial optimization of the sputtering parameters for the CdTe growth and also successfully sputtered CdS for the first time. In addition, we successfully fabricated what we believe are the first CdS/CdTe cells in which RF sputtering was used for both CdS and CdTe layers. We achieved an all-LDPVD ell with an air mass (AM) 1.5 efficiency of 10.5% and an all-RF-sputtered cell with AM 1.5 efficiency of 10.4%, as tested by NREL.

  13. Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications

    NASA Astrophysics Data System (ADS)

    Shintri, Shashidhar S.

    Mercury cadmium telluride (MCT or Hg1-xCdxTe) grown by molecular beam epitaxy (MBE) is presently the material of choice for fabricating infrared (IR) detectors used in night vision based military applications. The focus of MCT epitaxy has gradually shifted since the last decade to using Si as the starting substrate since it offers several advantages. But the ˜19 % lattice mismatch between MCT and Si generates lots of crystal defects some of which degrade the performance of MCT devices. Hence thick CdTe films are used as buffer layers on Si to accommodate the defects. However, growth of high quality single crystal CdTe on Si is challenging and to date, the best MBE CdTe/Si reportedly has defects in the mid-105 cm -2 range. There is a critical need to reduce the defect levels by at least another order of magnitude, which is the main motivation behind the present work. The use of alternate growth technique called metal-organic vapor phase epitaxy (MOVPE) offers some advantages over MBE and in this work MOVPE has been employed to grow the various epitaxial films. In the first part of this work, conditions for obtaining high quality (211)B CdTe epitaxy on (211)Si were achieved, which also involved studying the effect of having additional intermediate buffer layers such as Ge and ZnTe and incorporation of in-situ thermal cyclic annealing (TCA) to reduce the dislocation density. A critical problem of Si cross-contamination due to 'memory effect' of different reactant species was minimized by introducing tertiarybutylArsine (TBAs) which resulted in As-passivation of (211)Si. The best 8-10 µm thick CdTe films on blanket (non-patterned) Si had dislocations around 3×105 cm-2, which are the best reported by MOVPE till date and comparable to the highest quality films available by MBE. In the second part of the work, nanopatterned (211)Si was used to study the effect of patterning on the crystal quality of epitaxial CdTe. In one such study, patterning of ˜20 nm holes in SiO2

  14. Analysis of the growth of cadmium zinc telluride in an electrodynamic gradient freeze furnace via a self-consistent, multi-scale numerical model

    NASA Astrophysics Data System (ADS)

    Pandy, Arun; Yeckel, Andrew; Reed, Michael; Szeles, Csaba; Hainke, Marc; Müller, Georg; Derby, Jeffrey J.

    2005-03-01

    A multi-scale model has been developed to study the growth of single crystals of cadmium zinc telluride (CZT) in an industrial electrodynamic gradient freeze (EDG) furnace. A global model (CrsyVUn) that computes furnace heat transfer is coupled with a local model (CATS2D) that solves for heat transfer, melt flow, and melt-crystal interface shape in an iterative scheme to compute a self-consistent solution. Details of how the two models are coupled have a strong bearing on the convergence of the iterations. One-way coupling of the models, i.e., providing either flux or temperature boundary conditions from the global model to the local model without iteration, yields solutions that differ significantly from the self-consistent solution of the multi-scale model.

  15. Investigation of the internal electric field in cadmium zinc telluride detectors using the Pockels effect and the analysis of charge transients

    SciTech Connect

    Groza, Michael; Cui Yunlong; Buliga, Vladimir; Guo, Mingsheng; Coca, Constantine; Burger, Arnold; Krawczynski, Henric; Garson, Alfred III; Martin, Jerrad W.; Lee, Kuen; Li Qiang; Beilicke, Matthias

    2010-01-15

    The Pockels electro-optic effect can be used to investigate the internal electric field in cadmium zinc telluride (CZT) single crystals that are used to fabricate room temperature x and gamma radiation detectors. An agreement is found between the electric field mapping obtained from Pockels effect images and the measurements of charge transients generated by alpha particles. The Pockels effect images of a CZT detector along two mutually perpendicular directions are used to optimize the detector response in a dual anode configuration, a device in which the symmetry of the internal electric field with respect to the anode strips is of critical importance. The Pockels effect is also used to map the electric field in a CZT detector with dual anodes and an attempt is made to find a correlation with the simulated electric potential in such detectors. Finally, the stress-induced birefringence effects seen in the Pockels images are presented and discussed.

  16. Investigation of the Internal Electric Field in Cadmium Zinc Telluride Detectors Using the Pockels Effect and the Analysis of Charge Transients

    NASA Technical Reports Server (NTRS)

    Groza, Michael; Krawczynski, Henic; Garson, Alfred, III; Martin, Jerrad W.; Lee, Kuen; Li, Qiang; Beilicke, Matthias; Cui, Yunlong; Buliga, Vladimir; Guo, Mingsheng; Coca, Constantine; Burger, Arnold

    2010-01-01

    The Pockels electro-optic effect can be used to investigate the internal electric field in cadmium zinc telluride (CZT) single crystals that are used to fabricate room temperature x and gamma radiation detectors. An agreement is found between the electric field mapping obtained from Pockels effect images and the measurements of charge transients generated by alpha particles. The Pockels effect images of a CZT detector along two mutually perpendicular directions are used to optimize the detector response in a dual anode configuration, a device in which the symmetry of the internal electric field with respect to the anode strips is of critical importance. The Pockels effect is also used to map the electric field in a CZT detector with dual anodes and an attempt is made to find a correlation with the simulated electric potential in such detectors. Finally, the stress-induced birefringence effects seen in the Pockels images are presented and discussed.

  17. Material and detector properties of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by the modified floating-zone method

    NASA Astrophysics Data System (ADS)

    Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Roy, U. N.; Yang, G.; Liu, T.; Zhong, R.; Schneeloch, J.; James, R. B.

    2015-06-01

    We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd1-xMnxTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd1-xMnxTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Our experimental results show that CMT crystals grown by the modified floating zone method apparently are free from Te inclusions. However, we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.

  18. Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

    NASA Astrophysics Data System (ADS)

    Varade, Vaibhav; Jagtap, Amardeep M.; Anjaneyulu, P.; Koteswara Rao, K. S. R.; Ramesh, K. P.; Menon, R.

    2015-06-01

    Temperature and photo-dependent current-voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT:PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler-Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (˜ 400%), which is attributed to the charge transfer phenomena. The effective barrier height (ΦB ≈ 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed.

  19. Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

    SciTech Connect

    Varade, Vaibhav Jagtap, Amardeep M.; Koteswara Rao, K. S. R.; Ramesh, K. P.; Menon, R.; Anjaneyulu, P.

    2015-06-07

    Temperature and photo-dependent current–voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT:PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler–Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (∼ 400%), which is attributed to the charge transfer phenomena. The effective barrier height (Φ{sub B} ≈ 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed.

  20. Material and detector properties of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by the modified floating-zone method

    DOE PAGESBeta

    Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Roy, U. N.; Yang, G.; Liu, T.; Zhong, R.; Schneelock, J.; et al

    2014-12-24

    We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd1-xMnxTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd1-xMnxTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Thus, our experimental results show that CMT crystals grown by the modified floating zone method apparently are free from Te inclusions. However,more » we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.« less

  1. Investigating the effect of characteristic x-rays in cadmium zinc telluride detectors under breast computerized tomography operating conditions

    PubMed Central

    Glick, Stephen J.; Didier, Clay

    2013-01-01

    A number of research groups have been investigating the use of dedicated breast computerized tomography (CT). Preliminary results have been encouraging, suggesting an improved visualization of masses on breast CT as compared to conventional mammography. Nonetheless, there are many challenges to overcome before breast CT can become a routine clinical reality. One potential improvement over current breast CT prototypes would be the use of photon counting detectors with cadmium zinc telluride (CZT) (or CdTe) semiconductor material. These detectors can operate at room temperature and provide high detection efficiency and the capability of multi-energy imaging; however, one factor in particular that limits image quality is the emission of characteristic x-rays. In this study, the degradative effects of characteristic x-rays are examined when using a CZT detector under breast CT operating conditions. Monte Carlo simulation software was used to evaluate the effect of characteristic x-rays and the detector element size on spatial and spectral resolution for a CZT detector used under breast CT operating conditions. In particular, lower kVp spectra and thinner CZT thicknesses were studied than that typically used with CZT based conventional CT detectors. In addition, the effect of characteristic x-rays on the accuracy of material decomposition in spectral CT imaging was explored. It was observed that when imaging with 50-60 kVp spectra, the x-ray transmission through CZT was very low for all detector thicknesses studied (0.5–3.0 mm), thus retaining dose efficiency. As expected, characteristic x-ray escape from the detector element of x-ray interaction increased with decreasing detector element size, approaching a 50% escape fraction for a 100 μm size detector element. The detector point spread function was observed to have only minor degradation with detector element size greater than 200 μm and lower kV settings. Characteristic x-rays produced increasing

  2. Progress Toward a Stabilization and Preconditioning Protocol for Polycrystalline Thin-Film Photovoltaic Modules

    SciTech Connect

    del Cueto, J. A.; Deline, C. A.; Rummel, S. R.; Anderberg, A.

    2010-08-01

    Cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules can exhibit substantial variation in measured performance depending on prior exposure history. This study examines the metastable performance changes in these PV modules with the goal of establishing standard preconditioning or stabilization exposure procedures to mitigate measured variations prior to current-voltage (IV) measurements.

  3. Photovoltaics

    NASA Astrophysics Data System (ADS)

    Seippel, R. G.

    This book attempts to provide the reader with a cursory look at solar energy from a quarry of quartz to a sophisticated solar system. The progression of the theories of light is discussed along with the progression of photoelectricity, light rays, the optical spectrum, light reception, photodetection, aspects of photometry and radiometry, preferred terms in radiometric measurement, semiconductor physics, and light energy availability. Other subjects explored are related to manufacturing processes, photovoltaic materials, crystal growing, slicing techniques, wafer finishing, solar cell fabrication, photovoltaic cell types, concentrators, module fabrication, problems of quality assurance, photovoltaic systems, and the photovoltaics hierarchy. Attention is given to the polycrystalline cell, insulator cells, cadmium sulfide cells, amorphous silicon cells, an electrochemical cell, and the low-cost solar array project.

  4. GEODE 2: Manufacturing large area format cadmium-mercury-telluride crystals in a microgravity environment. Pressure sensor proof of concept

    NASA Astrophysics Data System (ADS)

    Gale, M. R.; Beattie, D. A.

    In the GEODE 1 experiment, a semiconductor Cd-Hg telluride crystal was grown in the MASER1 sounding rocket. It was shown that bulk-quench Cd-Hg telluride crystallization in a microgravity environment results in a more homogeneous crystal structure than can be achieved terrestrially. In the GEODE 2 program, the wall thickness of the quartz ampoule containing the crystal will be reduced to improve the heat transfer characteristics during crystallization. Ampoule explosion must be prevented by active control of the pressure surrounding the weaker, thin-walled ampoule to match that inside the furnace. A prototype pressure sensor that uses the absorption of ultraviolet light by Hg vapor has been built and tested. Pressures from 4 to 40 atmospheres have been measured with a resolution better than 0.35 atmospheres over the entire range. The feasibility of the pressure measurement technique has been demonstrated, although some design improvements are required in order to make measurements more repeatable.

  5. The influence of reaction times on structural, optical and luminescence properties of cadmium telluride nanoparticles prepared by wet-chemical process

    NASA Astrophysics Data System (ADS)

    Kiprotich, Sharon; Dejene, Francis B.; Ungula, Jatani; Onani, Martin O.

    2016-01-01

    This paper explains one pot synthesis of type II water soluble L-cysteine capped cadmium telluride (CdTe) core shell quantum dots using cadmium acetate, potassium tellurite and L-cysteine as the starting materials. The reaction was carried out in a single three necked flask without nitrogen under reflux at 100 °C. Results from PL show a sharp absorption excitonic band edge of the CdTe core with respect to the core shell which loses its shoulder during the growth of the shell on the core. The PL spectra indicate a drastic shift in emission window of the core which is simultaneously accompanied by an increase in emission intensity. X-ray diffraction pattern confirms the formation of hexagonal phase for all samples. Some difference in absorption edges were observed due to varying synthesis time of CdTe NPs. The position of the absorption band is observed to shift towards the lower wavelength side for shorter durations of synthesis.

  6. Cadmium telluride quantum dots cause oxidative stress leading to extrinsic and intrinsic apoptosis in hepatocellular carcinoma HepG2 cells.

    PubMed

    Nguyen, Kathy C; Willmore, William G; Tayabali, Azam F

    2013-04-01

    The mechanisms of toxicity related to human hepatocellular carcinoma HepG2 cell exposures to cadmium telluride quantum dots (CdTe-QDs) were investigated. CdTe-QDs caused cytotoxicity in HepG2 cells in a dose- and time-dependent manner. Treated cells showed an increase in reactive oxygen species (ROS). Altered antioxidant levels were demonstrated by depletion of reduced glutathione (GSH), a decreased ratio of reduced glutathione to oxidized glutathione (GSH/GSSG) and an increased NF-E2-related Factor 2 (Nrf2) activation. Enzyme assays showed that superoxide dismutase (SOD) activity was elevated whereas catalase (CAT) and glutathione-S-transferase (GST) activities were depressed. Further analyses revealed that CdTe-QD exposure resulted in apoptosis, indicated by changes in levels of caspase-3 activity, poly ADP-ribose polymerase (PARP) cleavage and phosphatidylserine externalization. Extrinsic apoptotic pathway markers such as Fas levels and caspase-8 activity increased as a result of CdTe-QD exposure. Involvement of the intrinsic/mitochondrial apoptotic pathway was indicated by decreased levels of B-cell lymphoma 2 (Bcl2) protein and mitochondrial cytochrome c, and by increased levels of mitochondrial Bcl-2-associated X protein (Bax) and cytosolic cytochrome c. Further, mitogen-activated protein kinases (MAPKs) such as c-Jun N-terminal kinases (JNK), extracellular signal-regulated kinases (Erk1/2), and p38 were all activated. Our findings reveal that CdTe-QDs cause oxidative stress, interfere with antioxidant defenses and activate protein kinases, leading to apoptosis via both extrinsic and intrinsic pathways. Since the effects of CdTe-QDs on selected biomarkers were similar or greater compared to those of CdCl2 at equivalent concentrations of cadmium, the study suggests that the toxicity of CdTe-QDs arises from a combination of the effects of cadmium and ROS generated from the NPs. PMID:23485651

  7. Simulation and experimental characterization of the point spread function, pixel saturation, and blooming of a mercury cadmium telluride focal plane array.

    PubMed

    Soehnel, Grant; Tanbakuchi, Anthony

    2012-11-20

    A custom IR spot scanning experiment was constructed to project subpixel spots on a mercury cadmium telluride focal plane array (FPA). The hardware consists of an FPA in a liquid nitrogen cooled Dewar, high precision motorized stages, a custom aspheric lens, and a 1.55 and 3.39 μm laser source. By controlling the position and intensity of the spot, characterizations of cross talk, saturation, blooming, and (indirectly) the minority carrier lifetime were performed. In addition, a Monte-Carlo-based charge diffusion model was developed to validate experimental data and make predictions. Results show very good agreement between the model and experimental data. Parameters such as wavelength, reverse bias, and operating temperature were found to have little effect on pixel crosstalk in the absorber layer of the detector. Saturation characterizations show that these FPAs, which do not have antiblooming circuitry, exhibit an increase in cross talk due to blooming at ∼39% beyond the flux required for analog saturation. PMID:23207309

  8. Rapid long-wave infrared laser-induced breakdown spectroscopy measurements using a mercury-cadmium-telluride linear array detection system.

    PubMed

    Yang, Clayton S-C; Brown, Eiei; Kumi-Barimah, Eric; Hommerich, Uwe; Jin, Feng; Jia, Yingqing; Trivedi, Sudhir; D'souza, Arvind I; Decuir, Eric A; Wijewarnasuriya, Priyalal S; Samuels, Alan C

    2015-11-20

    In this work, we develop a mercury-cadmium-telluride linear array detection system that is capable of rapidly capturing (∼1-5  s) a broad spectrum of atomic and molecular laser-induced breakdown spectroscopy (LIBS) emissions in the long-wave infrared (LWIR) region (∼5.6-10  μm). Similar to the conventional UV-Vis LIBS, a broadband emission spectrum of condensed phase samples covering the whole 5.6-10 μm region can be acquired from just a single laser-induced microplasma or averaging a few single laser-induced microplasmas. Atomic and molecular signature emission spectra of solid inorganic and organic tablets and thin liquid films deposited on a rough asphalt surface are observed. This setup is capable of rapidly probing samples "as is" without the need of elaborate sample preparation and also offers the possibility of a simultaneous UV-Vis and LWIR LIBS measurement. PMID:26836525

  9. Apoptosis Induction and Imaging of Cadmium-Telluride Quantum Dots with Wogonin in Multidrug-Resistant Leukemia K562/A02 Cell.

    PubMed

    Huang, Bin; Liu, Hongyi; Huang, Dongliang; Mao, Xuhua; Hu, Xianyun; Jiang, Caiyun; Pu, Maomao; Zhang, Gen; Zeng, Xin

    2016-03-01

    Wogonin (5,7-dihydroxy-8-methoxyflavone) is one of the active components of flavonoids isolated from Scutellariae radix and possesses antitumor effect against leukemia. Cadmium-telluride quantum dots (CdTe-QDs) are a kind of nanoparticles with great potential in functioning as an efficient drug delivery vector in biomedical research. In this study, we investigated the synergistic effect of CdTe-QDs with Wogonin on the induction of apoptosis using drug-resistant human leukemia KA cells. Flow cytometry analysis, assay of morphology under electron microscope, quantitative analysis of tumor volume and micro-CT imaging demonstrated that compared with that by pure CdTe-QDs or wogonin, the apoptosis rate increased sharply when treated wirh CdTe-QDs together with wogonin on KA cells. These results proved that the nanocomposites readily overcame the barrier of drug-resistance and provoked cell apoptosis in vitro and in vivo by facilitating the interaction between wogonin and KA cells. As known to all, it is an inevitable tendency that new effective therapies will take the place of conventional chemotherapy and radiotherapy presenting significant disadvantages. According to this article, CdTe-QD combined with wogonin is a possible alternative for some cancer treatments. PMID:27455661

  10. Enhancement of anti arthritic effect of quercetin using thioglycolic acid-capped cadmium telluride quantum dots as nanocarrier in adjuvant induced arthritic Wistar rats.

    PubMed

    Jeyadevi, R; Sivasudha, T; Rameshkumar, A; Ananth, D Arul; Aseervatham, G Smilin Bell; Kumaresan, K; Kumar, L Dinesh; Jagadeeswari, S; Renganathan, R

    2013-12-01

    In this present study, we investigated thio glycolic acid-capped cadmium telluride quantum dots (TGA-CdTe QDs) as nano carrier to study the antiarthritic activity of quercetin on adjuvant induced arthritic Wistar rats. The free radical scavenging activity of QDs-QE complex was evaluated by 2,2'-azinobis-3-ethylbenzothiazoline-6-sulphonic acid (ABTS), 2,2-diphenyl-1-picrylhydrazyl (DPPH), nitric oxide (NO) and superoxide anion scavenging assays. Fifteen days after adjuvant induction, arthritic rats received QDs-QE complex orally at the dose of 0.2 and 0.4mg/kg daily for 3 weeks. Diclofenac sodium (DF) was used as a reference drug. Administration of QDs-QE complex showed a significant reduction in inflammation and improvement in cartilage regeneration. Treatment with QDs-QE complex significantly (P<0.05) reduced the expressions lipid peroxidation and showed significant (P<0.05) increase in activities of antioxidant enzymes such as superoxide dismutase (SOD), reduced glutathione (GSH), glutathione peroxidase (GPx) catalase (CAT) levels in paw tissue. C-reactive protein (CRP), rheumatoid factor (RF), red blood cells (RBC) and white blood cells (WBC) count and erythrocyte sedimentation rate (ESR) of experimental animals were also estimated. Histology of hind limb tissue in experimental groups confirmed the complete cartilage regeneration in arthritis induced rats treated with QDs-QE complex. Based on our findings, we suggest that the QDs act as nano carrier for the drugs used in the treatment of various degenerative diseases. PMID:23994749

  11. Strategies for recycling CdTe photovoltaic modules

    NASA Astrophysics Data System (ADS)

    Eberspacher, Chris; Gay, Charles F.; Moskowitz, Paul D.

    1994-12-01

    Recycling end-of-life cadmium telluride (CdTe) photovoltaic (PV) modules may enhance the competitive advantage of CdTe PV in the marketplace, but the experiences of industries with comparable Environmental, Health and Safety (EH&S) challenges suggest that collection and recycling costs can impose significant economic burdens. Customer cooperation and pending changes to US Federal law may improve recycling economics.

  12. Photovoltaic Cell And Manufacturing Process

    DOEpatents

    Albright, Scot P.; Chamberlin, Rhodes R.

    1996-11-26

    Provided is a method for controlling electrical properties and morphology of a p-type material of a photovoltaic device. The p-type material, such as p-type cadmium telluride, is first subjected to heat treatment in an oxidizing environment, followed by recrystallization in an environment substantially free of oxidants. In one embodiment, the heat treatment step comprises first subjecting the p-type material to an oxidizing atmosphere at a first temperature to getter impurities, followed by second subjecting the p-type material to an oxidizing atmosphere at a second temperature, higher than the first temperature, to develop a desired oxidation gradient through the p-type material.

  13. Quantitative High-Efficiency Cadmium-Zinc-Telluride SPECT with Dedicated Parallel-Hole Collimation System in Obese Patients: Results of a Multi-Center Study

    PubMed Central

    Nakazato, Ryo; Slomka, Piotr J.; Fish, Mathews; Schwartz, Ronald G.; Hayes, Sean W.; Thomson, Louise E.J.; Friedman, John D.; Lemley, Mark; Mackin, Maria L.; Peterson, Benjamin; Schwartz, Arielle M.; Doran, Jesse A.; Germano, Guido; Berman, Daniel S.

    2014-01-01

    Background Obesity is a common source of artifact on conventional SPECT myocardial perfusion imaging (MPI). We evaluated image quality and diagnostic performance of high-efficiency (HE) cadmium-zinc-telluride (CZT) parallel-hole SPECT-MPI for coronary artery disease (CAD) in obese patients. Methods and Results 118 consecutive obese patients at 3 centers (BMI 43.6±8.9 kg/m2, range 35–79.7 kg/m2) had upright/supine HE-SPECT and ICA >6 months (n=67) or low-likelihood of CAD (n=51). Stress quantitative total perfusion deficit (TPD) for upright (U-TPD), supine (S-TPD) and combined acquisitions (C-TPD) was assessed. Image quality (IQ; 5=excellent; <3 nondiagnostic) was compared among BMI 35–39.9 (n=58), 40–44.9 (n=24) and ≥45 (n=36) groups. ROC-curve area for CAD detection (≥50% stenosis) for U-TPD, S-TPD, and C-TPD were 0.80, 0.80, and 0.87, respectively. Sensitivity/specificity was 82%/57% for U-TPD, 74%/71% for S-TPD, and 80%/82% for C-TPD. C-TPD had highest specificity (P=.02). C-TPD normalcy rate was higher than U-TPD (88% vs. 75%, P=.02). Mean IQ was similar among BMI 35–39.9, 40–44.9 and ≥45 groups [4.6 vs. 4.4 vs. 4.5, respectively (P=.6)]. No patient had a non-diagnostic stress scan. Conclusions In obese patients, HE-SPECT MPI with dedicated parallel-hole collimation demonstrated high image quality, normalcy rate, and diagnostic accuracy for CAD by quantitative analysis of combined upright/supine acquisitions. PMID:25388380

  14. Spectral analysis of the effects of 1.7 MeV electron irradiation on the current transfer characteristic of cadmium telluride solar cells.

    PubMed

    Tian, Jin-Xiu; Zeng, Guang-Gen; He, Xu-Lin; Zhang, Jing-Quan; Wu, Li-Li; Li, Wei; Li, Bing; Wang, Wen-Wu; Feng, Liang-Huan

    2014-04-01

    The effects of device performance of 1.7 MeV electron irradiation on cadmium telluride polycrystalline thin film solar cells with the structure of anti-radiation glass/ITO/ZnO/CdS/CdTe/ZnTe/ZnTe : Cu/Ni have been studied. Light and dark I-V characteristics, dark C-V characteristics, quantum efficiency (QE), admittance spectrum (AS) and other testing methods were used to analyze cells performance such as the open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF) and conversion efficiency (eta). It was explored to find out the effects of irradiation on the current transfer characteristic of solar cells combined with the dark current density (Jo), diode ideal factor (A), quantum efficiency, carrier concentration and the depletion layer width. The decline in short-circuit current was very large and the efficiency of solar cells decreased obviously after irradiation. Reverse saturation current density increased, which indicates that p-n junction characteristics of solar cells were damaged, and diode ideal factor was almost the same, so current transport mechanism of solar cells has not changed. Quantum efficiency curves proved that the damage of solar cells' p-n junction influenced the collection of photo-generated carriers. Irradiation made carrier concentration reduce to 40.6%. The analyses have shown that. A new defect was induced by electron irradiation, whose position is close to 0.58 eV above the valence band in the forbidden band, and capture cross section is 1.78 x 10(-16) cm2. These results indicate that irradiation influences the generation of photo-generated carriers, increases the risk of the carrier recombination and the reverse dark current, and eventually makes the short-circuit current of solar cells decay. PMID:25007593

  15. SemiSPECT: A small-animal single-photon emission computed tomography (SPECT) imager based on eight cadmium zinc telluride (CZT) detector arrays

    SciTech Connect

    Kim, Hyunki; Furenlid, Lars R.; Crawford, Michael J.; Wilson, Donald W.; Barber, H. Bradford; Peterson, Todd E.; Hunter, William C.J.; Liu Zhonglin; Woolfenden, James M.; Barrett, Harrison H.

    2006-02-15

    The first full single-photon emission computed tomography (SPECT) imager to exploit eight compact high-intrinsic-resolution cadmium zinc telluride (CZT) detectors, called SemiSPECT, has been completed. Each detector consists of a CZT crystal and a customized application-specific integrated circuit (ASIC). The CZT crystal is a 2.7 cmx2.7 cmx{approx}0.2 cm slab with a continuous top electrode and a bottom electrode patterned into a 64x64 pixel array by photolithography. The ASIC is attached to the bottom of the CZT crystal by indium-bump bonding. A bias voltage of -180 V is applied to the continuous electrode. The eight detectors are arranged in an octagonal lead-shielded ring. Each pinhole in the eight-pinhole aperture placed at the center of the ring is matched to each individual detector array. An object is imaged onto each detector through a pinhole, and each detector is operated independently with list-mode acquisition. The imaging subject can be rotated about a vertical axis to obtain additional angular projections. The performance of SemiSPECT was characterized using {sup 99m}Tc. When a 0.5 mm diameter pinhole is used, the spatial resolution on each axis is about 1.4 mm as estimated by the Fourier crosstalk matrix, which provides an algorithm-independent average resolution over the field of view. The energy resolution achieved by summing neighboring pixel signals in a 3x3 window is about 10% full-width-at-half-maximum of the photopeak. The overall system sensitivity is about 0.5x10{sup -4} with the energy window of {+-}10% from the photopeak. Line-phantom images are presented to visualize the spatial resolution provided by SemiSPECT, and images of bone, myocardium, and human tumor xenografts in mice demonstrate the feasibility of preclinical small-animal studies with SemiSPECT.

  16. SemiSPECT: a small-animal single-photon emission computed tomography (SPECT) imager based on eight cadmium zinc telluride (CZT) detector arrays.

    PubMed

    Kim, Hyunki; Furenlid, Lars R; Crawford, Michael J; Wilson, Donald W; Barber, H Bradford; Peterson, Todd E; Hunter, William C J; Liu, Zhonglin; Woolfenden, James M; Barrett, Harrison H

    2006-02-01

    The first full single-photon emission computed tomography (SPECT) imager to exploit eight compact high-intrinsic-resolution cadmium zinc telluride (CZT) detectors, called SemiSPECT, has been completed. Each detector consists of a CZT crystal and a customized application-specific integrated circuit (ASIC). The CZT crystal is a 2.7 cm x 2.7 cm x -0.2 cm slab with a continuous top electrode and a bottom electrode patterned into a 64 x 64 pixel array by photolithography. The ASIC is attached to the bottom of the CZT crystal by indium-bump bonding. A bias voltage of -180 V is applied to the continuous electrode. The eight detectors are arranged in an octagonal lead-shielded ring. Each pinhole in the eight-pinhole aperture placed at the center of the ring is matched to each individual detector array. An object is imaged onto each detector through a pinhole, and each detector is operated independently with list-mode acquisition. The imaging subject can be rotated about a vertical axis to obtain additional angular projections. The performance of SemiSPECT was characterized using 99mTc. When a 0.5 mm diameter pinhole is used, the spatial resolution on each axis is about 1.4 mm as estimated by the Fourier crosstalk matrix, which provides an algorithm-independent average resolution over the field of view. The energy resolution achieved by summing neighboring pixel signals in a 3 x 3 window is about 10% full-width-at-half-maximum of the photopeak. The overall system sensitivity is about 0.5 x 10(-4) with the energy window of +/-10% from the photopeak. Line-phantom images are presented to visualize the spatial resolution provided by SemiSPECT, and images of bone, myocardium, and human tumor xenografts in mice demonstrate the feasibility of preclinical small-animal studies with SemiSPECT. PMID:16532954

  17. SemiSPECT: A small-animal single-photon emission computed tomography (SPECT) imager based on eight cadmium zinc telluride (CZT) detector arrays

    PubMed Central

    Kim, Hyunki; Furenlid, Lars R.; Crawford, Michael J.; Wilson, Donald W.; Barber, H. Bradford; Peterson, Todd E.; Hunter, William C. J.; Liu, Zhonglin; Woolfenden, James M.; Barrett, Harrison H.

    2008-01-01

    The first full single-photon emission computed tomography (SPECT) imager to exploit eight compact high-intrinsic-resolution cadmium zinc telluride (CZT) detectors, called SemiSPECT, has been completed. Each detector consists of a CZT crystal and a customized application-specific integrated circuit (ASIC). The CZT crystal is a 2.7 cm × 2.7 cm × ~ 0.2 cm slab with a continuous top electrode and a bottom electrode patterned into a 64 × 64 pixel array by photolithography. The ASIC is attached to the bottom of the CZT crystal by indium-bump bonding. A bias voltage of −180 V is applied to the continuous electrode. The eight detectors are arranged in an octagonal lead-shielded ring. Each pinhole in the eight-pinhole aperture placed at the center of the ring is matched to each individual detector array. An object is imaged onto each detector through a pinhole, and each detector is operated independently with list-mode acquisition. The imaging subject can be rotated about a vertical axis to obtain additional angular projections. The performance of SemiSPECT was characterized using 99mTc. When a 0.5 mm diameter pinhole is used, the spatial resolution on each axis is about 1.4 mm as estimated by the Fourier crosstalk matrix, which provides an algorithm-independent average resolution over the field of view. The energy resolution achieved by summing neighboring pixel signals in a 3 × 3 window is about 10% full-width-at-half-maximum of the photopeak. The overall system sensitivity is about 0.5 × 10−4 with the energy window of ±10% from the photopeak. Line-phantom images are presented to visualize the spatial resolution provided by SemiSPECT, and images of bone, myocardium, and human tumor xenografts in mice demonstrate the feasibility of preclinical small-animal studies with SemiSPECT. PMID:16532954

  18. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report, 20 March 1995--19 March 1996

    SciTech Connect

    Trefny, J U; Mao, D

    1997-04-01

    The objective of this project is to develop improved processes for fabricating CdTe/CdS polycrystalline thin-film solar cells. Researchers used electrodeposition to form CdTe; electrodeposition is a non-vacuum, low-cost technique that is attractive for economic, large-scale production. During the past year, research and development efforts focused on several steps that are most critical to the fabricating high-efficiency CdTe solar cells. These include the optimization of the CdTe electrodeposition process, the effect of pretreatment of CdS substrates, the post-deposition annealing of CdTe, and back-contact formation using Cu-doped ZnTe. Systematic investigations of these processing steps have led to a better understanding and improved performance of the CdTe-based cells. Researchers studied the structural properties of chemical-bath-deposited CdS thin films and their growth mechanisms by investigating CdS samples prepared at different deposition times; investigated the effect of CdCl{sub 2} treatment of CdS films on the photovoltaic performance of CdTe solar cells; studied Cu-doped ZnTe as a promising material for forming stable, low-resistance contacts to the p-type CdTe; and investigated the effect of CdTe and CdS thickness on the photovoltaic performance of the resulting cells. As a result of their systematic investigation and optimization of the processing conditions, researchers improved the efficiency of CdTe/CdS cells using ZnTe back-contact and electrodeposited CdTe. The best CdTe/CdS cell exhibited a V{sub oc} of 0.778 V, a J{sub sc} of 22.4 mA/cm{sup 2}, a FF of 74%, and an efficiency of 12.9% (verified at NREL). In terms of individual parameters, researchers obtained a V{sub oc} over 0.8 V and a FF of 76% on other cells.

  19. The state of the art of thin-film photovoltaics

    SciTech Connect

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  20. Time-dependent toxicity of cadmium telluride quantum dots on liver and kidneys in mice: histopathological changes with elevated free cadmium ions and hydroxyl radicals

    PubMed Central

    Wang, Mengmeng; Wang, Jilong; Sun, Hubo; Han, Sihai; Feng, Shuai; Shi, Lu; Meng, Peijun; Li, Jiayi; Huang, Peili; Sun, Zhiwei

    2016-01-01

    A complete understanding of the toxicological behavior of quantum dots (QDs) in vivo is of great importance and a prerequisite for their application in humans. In contrast with the numerous cytotoxicity studies investigating QDs, only a few in vivo studies of QDs have been reported, and the issue remains controversial. Our study aimed to understand QD-mediated toxicity across different time points and to explore the roles of free cadmium ions (Cd2+) and hydroxyl radicals (·OH) in tissue damage. Male ICR mice were administered a single intravenous dose (1.5 µmol/kg) of CdTe QDs, and liver and kidney function and morphology were subsequently examined at 1, 7, 14, and 28 days. Furthermore, ·OH production in the tissue was quantified by trapping · OH with salicylic acid (SA) as 2,3-dihydroxybenzoic acid (DHBA) and detecting it using a high-performance liquid chromatography fluorescence method. We used the induction of tissue metallothionein levels and 2,3-DHBA:SA ratios as markers for elevated Cd2+ from the degradation of QDs and ·OH generation in the tissue, respectively. Our experimental results revealed that the QD-induced histopathological changes were time-dependent with elevated Cd2+ and ·OH, and could recover after a period of time. The Cd2+ and ·OH exhibited delayed effects in terms of histopathological abnormalities. Histological assessments performed at multiple time points might facilitate the evaluation of the biological safety of QDs. PMID:27307732

  1. Efficient and ultrafast formation of long-lived charge-transfer exciton state in atomically thin cadmium selenide/cadmium telluride type-II heteronanosheets.

    PubMed

    Wu, Kaifeng; Li, Qiuyang; Jia, Yanyan; McBride, James R; Xie, Zhao-xiong; Lian, Tianquan

    2015-01-27

    Colloidal cadmium chalcogenide nanosheets with atomically precise thickness of a few atomic layers and size of 10-100 nm are two-dimensional (2D) quantum well materials with strong and precise quantum confinement in the thickness direction. Despite their many advantageous properties, excitons in these and other 2D metal chalcogenide materials are short-lived due to large radiative and nonradiative recombination rates, hindering their applications as light harvesting and charge separation/transport materials for solar energy conversion. We showed that these problems could be overcome in type-II CdSe/CdTe core/crown heteronanosheets (with CdTe crown laterally extending on the CdSe nanosheet core). Photoluminesence excitation measurement revealed that nearly all excitons generated in the CdSe and CdTe domains localized to the CdSe/CdTe interface to form long-lived charge transfer excitons (with electrons in the CdSe domain and hole in the CdTe domain). By ultrafast transient absorption spectroscopy, we showed that the efficient exciton localization efficiency could be attributed to ultrafast exciton localization (0.64 ± 0.07 ps), which was facilitated by large in-plane exciton mobility in these 2D materials and competed effectively with exiton trapping at the CdSe or CdTe domains. The spatial separation of electrons and holes across the CdSe/CdTe heterojunction effectively suppressed radiative and nonradiative recombination processes, leading to a long-lived charge transfer exciton state with a half-life of ∼ 41.7 ± 2.5 ns, ∼ 30 times longer than core-only CdSe nanosheets. PMID:25548944

  2. Emissions from photovoltaic life cycles.

    PubMed

    Fthenakis, Vasilis M; Kim, Hyung Chul; Alsema, Erik

    2008-03-15

    Photovoltaic (PV) technologies have shown remarkable progress recently in terms of annual production capacity and life cycle environmental performances, which necessitate timely updates of environmental indicators. Based on PV production data of 2004-2006, this study presents the life-cycle greenhouse gas emissions, criteria pollutant emissions, and heavy metal emissions from four types of major commercial PV systems: multicrystalline silicon, monocrystalline silicon, ribbon silicon, and thin-film cadmium telluride. Life-cycle emissions were determined by employing average electricity mixtures in Europe and the United States during the materials and module production for each PV system. Among the current vintage of PV technologies, thin-film cadmium telluride (CdTe) PV emits the least amount of harmful air emissions as it requires the least amount of energy during the module production. However, the differences in the emissions between different PV technologies are very small in comparison to the emissions from conventional energy technologies that PV could displace. As a part of prospective analysis, the effect of PV breeder was investigated. Overall, all PV technologies generate far less life-cycle air emissions per GWh than conventional fossil-fuel-based electricity generation technologies. At least 89% of air emissions associated with electricity generation could be prevented if electricity from photovoltaics displaces electricity from the grid. PMID:18409654

  3. High-efficiency thin-film cadmium telluride photovoltaic cells. Annual subcontract report, January 20, 1995--January 19, 1996

    SciTech Connect

    Compaan, A D; Bohn, R G; Contreras-Puente, G

    1996-05-01

    This annual report covers the second year of a 3-year NREL subcontract with the University of Toledo that is focused on improvements in efficiency for radio frequency (rf)-sputtered CdS/CdTe solar cells. In earlier work supported by NREL, the University of Toledo established the viability of two new deposition methods for CdS/CdTe solar cells by fabricating cells with efficiencies greater than 10% at air mass (AM) 1.5 on soda lime glass for all-sputtered cells and also for all-laser-deposited cells. Most of the effort has been placed on radio frequency sputtering (RFS) because it was judged to be more economical and more easily scaled to large-area deposition. However, laser physical vapor deposition (LPVD) has remained the method of choice for the deposition of CdCl{sub 2} layers and also for the exploration of new materials such as the ternary alloys including CdS{sub x} Te{sub 1{minus}x} and dopants such as Cu in ZnTe.

  4. Thin film photovoltaics

    SciTech Connect

    Zweibel, K; Ullal, H S

    1989-05-01

    Thin films are considered a potentially attractive technological approach to making cost-effective electricity by photovoltaics. Over the last twenty years, many have been investigated and some (cadmium telluride, copper indium diselenide, amorphous silicon) have become leading candidates for future large-scale commercialization. This paper surveys the past development of these key thin films and gives their status and future prospects. In all cases, significant progress toward cost-effective PV electricity has been made. If this progress continues, it appears that thin film PV could provide electricity that is competitive for summer daytime peaking power requirements by the middle of the 1990s; and electricity in a range that is competitive with fossil fuel costs (i.e., 6 cents/kilowatt-hour) should be available from PV around the turn of the century. 22 refs., 9 figs.

  5. High-throughput manufacturing of thin-film CdS/CdTe photovoltaic modules. Annual subcontract report, 16 September 1996--15 January 1998

    SciTech Connect

    Sandwisch, D.W.

    1998-08-01

    Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. Solar Cells, Inc., has developed this technology and is scaling its pilot production capabilities to a multi-megawatt level. The Photovoltaic Manufacturing Technology (PVMaT) subcontract supports these efforts. Activities during the third phase of the program concentrated on process development, equipment design and testing, quality assurance, ES and H programs, and large-scale next-generation coating-system prototype development. These efforts broadly addressed the issues of the manufacturing process for producing thin-film, monolithic CdS/CdTe photovoltaic modules.

  6. Cadmium

    Integrated Risk Information System (IRIS)

    Cadmium ; CASRN 7440 - 43 - 9 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogenic Effects

  7. 133Xenon absorption into rubber-protected portable cadmium telluride (CdTe(Cl)) detectors invalidating the 133Xenon washout method for measurement of cutaneous and subcutaneous blood flow rates in man.

    PubMed

    Sørensen, J L

    1991-01-01

    The importance of 133Xenon absorption into rubber detector caps during cutaneous and subcutaneous blood flow measurement was investigated in 46 experiments involving 38 persons. 133Xenon was administered atraumatically. Cutaneous and subcutaneous washout rates were registered by portable Cadmium Telluride detectors without rubber caps, with rubber caps, and with rubber caps with Mylar membranes interposed between the rubber and the tissue investigated. No difference in rate constants obtained by means of various detector types was detected. The accumulation of 133Xenon in the rubber caps was found to take place within the first few minutes after the detectors had been brought into position. The 133Xenon then diffused back into the tissue exhibiting a great variation regarding rate constants. The 133Xenon diffused form rubber into air and perfused tissue tracing a monoexponential course; and again the rate constants would vary considerably. No correlation was found between elimination rates obtained with detectors with and without 133Xenon polluted caps, and no way of correcting for the 133Xenon content in the rubber caps was found. Relative changes in rate constants could still be recognized, but absolute values were not obtainable. PMID:1789123

  8. Performance comparison of four compact room-temperature detectors – two cadmium zinc telluride (CZT) semiconductor detectors, a LaCl3(Ce) scintillator, and an NaI(Tl) scintillator

    SciTech Connect

    J. K. Hartwell

    2004-10-01

    The performance characteristics of four compact, room-temperature detectors – two scintillators and two semiconductor detectors – have been studied. All are commercially-available detectors. The two scintillators were a Æ13mmX13mm lanthanum chloride [LaCl3(Ce)] detector and a Æ25mmX25mm sodium iodide [NaI(Tl)] detector. The two semiconductor detectors were a 10X10X3 mm3 cadmium zinc telluride (CZT) detector with a coplanar gridded anode and a 5X5X5 mm3 CZT detector with an extended cathode. The efficiency, resolution, and peak shape performance of these devices are compared in this work. Since LaCl3(Ce) is a relatively new commercial scintillator material, additional information on the performance of this detector is presented. Specifically, we discuss the impact of naturally-occurring radioactive 138La on the background spectra measured with this scintillator. Additionally, two of the three LaCl3(Ce) crystals that we obtained commercially were internally contaminated with an alpha particle-emitting radionuclide which we have identified as 227Ac+daughters. This contamination had a profound impact on the usefulness of these two detectors.

  9. Material and detector properties of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by the modified floating-zone method

    SciTech Connect

    Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Roy, U. N.; Yang, G.; Liu, T.; Zhong, R.; Schneelock, J.; James, R. B.

    2014-12-24

    We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd1-xMnxTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd1-xMnxTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Thus, our experimental results show that CMT crystals grown by the modified floating zone method apparently are free from Te inclusions. However, we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.

  10. First demonstration of 10 keV-width energy-discrimination K-edge radiography using a cadmium-telluride X-ray camera with a tungsten-target tube

    NASA Astrophysics Data System (ADS)

    Watanabe, Manabu; Sato, Eiichi; Abderyim, Purkhet; Abudurexiti, Abulajiang; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Nagao, Jiro; Sato, Shigehiro; Ogawa, Akira; Onagawa, Jun

    2011-05-01

    Energy-discrimination X-ray camera is useful to perform monochromatic radiography using polychromatic X-rays. This X-ray camera was developed to carry out K-edge radiography using cerium and gadolinium-based contrast media. In this camera, objects are irradiated by a cone beam from a tungsten-target X-ray generator, and penetrating X-ray photons are detected by a cadmium-telluride detector with amplifiers. Both optimal photon-energy level and energy width are selected using a multichannel analyzer, and the photon number is counted by a counter card. Radiography was performed by the detector scanning using an x- y stage driven by a two-stage controller, and radiograms were shown on a personal computer monitor. In radiography, tube voltage and current were 90 kV and 5.8 μA, respectively, and the X-ray intensity was 0.61 μGy/s at 1.0 m from the X-ray source. The K-edge energies of cerium and gadolinium are 40.3 and 50.3 keV, respectively, and 10 keV-width enhanced K-edge radiography was performed using X-ray photons with energies just beyond K-edge energies of cerium and gadolinium. Thus, cerium K-edge radiography was carried out using X-ray photons with an energy range from 40.3 to 50. 3 keV, and gadolinium K-edge radiography was accomplished utilizing photon energies ranging from 50.3 to 60.3 keV.

  11. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications). Quarterly progress report No. 3, October 9, 1979-January 8, 1980

    SciTech Connect

    Vedam, K; Das, M B; Krishnaswamy, S V

    1980-02-01

    The main emphasis during the third quarter of the program was on the improvement of the quality of sputtered films, their characterization and use in the fabrication of Schottky barrier type diodes and solar cell structures. Films prepared under different conditions and on different substrates were examined by SEM showing nodular growths under certain conditions. I-V, C-V and photovoltaic characteristics were measured on numerous samples based on n- and p-type films on Ni substrates having top metallization of either evaporated Au and Al. The n-type samples showed up to 200mV V/sub oc/ and small short-circuit currents. The characteristics observed are indicative of the presence of interfacial layer and surface states. Surface state's capacitance were measured on p-type samples metallized with Au.

  12. The performance of a combined solar photovoltaic (PV) and thermoelectric generator (TEG) system

    NASA Astrophysics Data System (ADS)

    Bjørk, R.; Nielsen, K. K.

    2015-10-01

    The performance of a combined solar photovoltaic (PV) and thermoelectric generator (TEG) system is examined using an analytical model for four different types of commercial PVs and a commercial bismuth telluride TEG. The TEG is applied directly on the back of the PV, so that the two devices have the same temperature. The PVs considered are crystalline Si (c-Si), amorphous Si (a-Si), copper indium gallium (di)selenide (CIGS) and cadmium telluride (CdTe) cells. The degradation of PV performance with temperature is shown to dominate the increase in power produced by the TEG, due to the low efficiency of the TEG. For c-Si, CIGS and CdTe PV cells the combined system produces a lower power and has a lower efficiency than the PV alone, whereas for an a-Si cell the total system performance may be slightly increased by the TEG.

  13. Cadmium telluride quantum dots (CdTe-QDs) and enhanced ultraviolet-B (UV-B) radiation trigger antioxidant enzyme metabolism and programmed cell death in wheat seedlings.

    PubMed

    Chen, Huize; Gong, Yan; Han, Rong

    2014-01-01

    Nanoparticles (NPs) are becoming increasingly widespread in the environment. Free cadmium ions released from commonly used NPs under ultraviolet-B (UV-B) radiation are potentially toxic to living organisms. With increasing levels of UV-B radiation at the Earth's surface due to the depletion of the ozone layer, the potential additive effect of NPs and UV-B radiation on plants is of concern. In this study, we investigated the synergistic effect of CdTe quantum dots (CdTe-QDs), a common form of NP, and UV-B radiation on wheat seedlings. Graded doses of CdTe-QDs and UV-B radiation were tested, either alone or in combination, based on physical characteristics of 5-day-old seedlings. Treatments of wheat seedlings with either CdTe-QDs (200 mg/L) or UV-B radiation (10 KJ/m(2)/d) induced the activation of wheat antioxidant enzymes. CdTe-QDs accumulation in plant root cells resulted in programmed cell death as detected by DNA laddering. CdTe-QDs and UV-B radiation inhibited root and shoot growth, respectively. Additive inhibitory effects were observed in the combined treatment group. This research described the effects of UV-B and CdTe-QDs on plant growth. Furthermore, the finding that CdTe-QDs accumulate during the life cycle of plants highlights the need for sustained assessments of these interactions. PMID:25329900

  14. Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

    DOEpatents

    Wu, Xuanzhi; Coutts, Timothy J.; Sheldon, Peter; Rose, Douglas H.

    1999-01-01

    A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

  15. Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

    DOEpatents

    Wu, X.; Coutts, T.J.; Sheldon, P.; Rose, D.H.

    1999-07-13

    A photovoltaic device is disclosed having a substrate, a layer of Cd[sub 2]SnO[sub 4] disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd[sub 2]SnO[sub 4], and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd[sub 2]SnO[sub 4] layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd[sub 2]SnO[sub 4], and depositing an electrically conductive film onto the thin film of semiconductor materials. 10 figs.

  16. Characterization of optoelectronic properties of mercury cadmium telluride and zinc oxide II-VI semiconductors for infrared and ultraviolet detector applications

    NASA Astrophysics Data System (ADS)

    Moazzami, Kaveh

    Infrared (IR) and Ultraviolet (UV) light detectors have numerous applications including thermal imaging and chemical and biological spectroscopy. In this work, key aspects of HgCdTe and ZnO semiconductor materials are studied in accordance to their importance to state of the art IR and UV detector technologies. The leading material technology for IR detectors today is the lattice matched HgCdTe alloy. The model for optical absorption in this material has not been reexamined after major improvements in HgCdTe material growth technology. Access to an accurate model for absorption coefficient of this material is important for understanding of detector behavior, where the degree of accuracy required continues to grow as detector structures continue to add complexity. In this work, the optical absorption coefficient of HgCdTe is studied in detail using theoretical bandstructure calculations, temperature dependent optical spectroscopy, and infrared spectroscopic ellipsometry. A new model for the optical absorption coefficient of this material as a function of composition and temperature is presented based on a proposed empirical relationship. A significant improvement in the prediction of photovoltaic detector spectral response is observed based on this proposed model. ZnO is emerging as an important material for short wavelength optoelectronic devices, and may have a major impact on high-performance UV detectors. In this work, the steady-state and time-resolved response of ZnO photoconductors are studied. A sharp turn on is observed in the UV for these photodetectors, corresponding to the bandgap energy of 3.4eV for the ZnO material. Photoconductive decay transients show a fast (nanoseconds) and slow (milliseconds) time constant that are attributed to minority carrier relaxation and trapping processes, respectively. Persistent photoconductivity was observed, with time constant on the order of minutes, in response to both visible and UV excitation and is attributed to

  17. Module process optimization and device efficiency improvement for stable, low-cost, large-area, cadmium telluride-based photovoltaic module production

    SciTech Connect

    Albright, S.P.; Ackerman, B.; Chamberlin, R.R.; Jordan, J.F. )

    1992-04-01

    This report describes work under a three-year phased subcontract to develop CdS/CdTe devices and modules and to further improve the technology base at Photon Energy, Inc. (PEI) to better address the commercialization issues and objectives of the PEI and the US Department of Energy. During this reporting period we (1) achieved efficiencies of 12.7% on small area devices, (2) achieved 1-ft{sup 2} modules with over 8% aperture-area efficiency (and active area efficiencies up to {approximately}10%), (3) tested 4-ft{sup 2} modules at NREL at 23.1 (21.3) watts, normalized (6.3% efficiency), and (4) found no inherent stability problems with CdTe technology during life testing, at both NREL and PEI. 7 refs.

  18. Module process optimization and device efficiency improvement for stable, low-cost, large-area, cadmium telluride-based photovoltaic module production

    NASA Astrophysics Data System (ADS)

    Albright, S. P.; Johnson, S. X.

    1994-06-01

    This report describes work performed under a three-phase subcontract. The objectives of the program include (1) achievement of active-area efficiencies of greater than 14% on small cells; (2) achievement of aperture-area efficiencies of greater than 13% on 0.09-sq m (1 sq ft) modules; (3) achievement of aperture-area efficiencies of greater than 12.5% on 0.37-sq m (4 sq ft) modules; and achievement of greater than 20-year module life (based on life testing extrapolations) with no greater than 10% efficiency degradation. The results obtained and described herein include the following: (1) efficiencies of 12.7% were achieved on small-area devices; (2) 0.09-sq m(1 sq ft) modules achieved greater than 8% aperture-area efficiency, but work for further efficiency improvement was redirected toward the 0.37-sq m(4 sq ft) modules; (3) 0.37-sq m (4 sq ft) modules achieved 26.5-W output, which calculates to 8.0% aperture-area efficiency; (4) consistent prototype production was focused on and substantially achieved within Phase 2; (5) life testing at the National Renewable Energy Laboratory showed no inherent stability problems with the CdTe technology, and the accuracy of module measurement was satisfactorily resolved; and (6) a 'cradle-to-cradle' recycling program was begun based upon the philosophy that the establishment of such mechanisms will be required to ensure maximum recapture and recycling of all manufacturing waste materials and/or modules returned from the field.

  19. Photovoltaics

    SciTech Connect

    Deb, S.K.

    1985-01-01

    Photovoltaics, the direct conversion of sunlight into electrical energy, may be the best hope for a relatively clean, secure, and inexhaustible source of energy for the future. To stimulate the growth of this technology as a viable energy supply option, considerable research and development has been directed, in both the private and public sectors, to a variety of materials and devices. The technology has sufficiently matured in recent years to be seriously considered as an alternative to conventional energy sources. Despite phenomenal advances in energy conversion efficiencies, many problems still remain to be solved. It is timely, therefore, to review various technological options available. This review critically assesses the status and promise of this emerging technology by a group of experts, each of whom has presented an extended invited paper on his specific field of expertise. This collection of presentations is intended to be an authoritative review of the technology including its developments, current status, and projections for future direction. The content of this review was carefully chosen to represent most of the leading state-of-the-art technologies; these are divided into four areas: (i) a general overview and discussion of silicon technology; (ii) high efficiency multijunction solar cells; (iii) amorphous silicon solar cells; and (iv) thin film compound semiconductors.

  20. Research support for cadmium telluride crystal growth

    NASA Technical Reports Server (NTRS)

    Rosenberger, Franz

    1995-01-01

    The growth of single crystals of zinc selenide was carried out by both closed ampoule physical vapor transport and effusive ampoule physical vapor transport (EAPVT). The latter technique was shown to be a much more efficient method for the seeded growth of zinc selenide, resulting in higher transport rates. Furthermore, EAPVT work on CdTe has shown that growth onto (n 11) seeds is advantageous for obtaining reduced twinning and defect densities in II-VI sphalerite materials.

  1. Thin film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  2. Photorefractive properties of doped cadmium telluride

    NASA Astrophysics Data System (ADS)

    Bylsma, R. B.; Bridenbaugh, P. M.; Olson, D. H.; Glass, A. M.

    1987-09-01

    The first study of the photorefractive properties of doped CdTe has demonstrated high sensitivity for optical processing applications. Of the binary II-VI and III-V semiconductors, CdTe has the highest electro-optic coefficient r41 in the infrared, some three times larger than that of GaAs and InP. Deep levels introduced into CdTe exhibit appropriate absorption and photoconductivity at 1.06 μm by doping with V and Ti impurities. Photorefractive beam coupling experiments in CdTe:V gave small signal gains of 0.7 cm-1, and diffraction efficiencies with no applied electrical field of 0.7%. Thus, CdTe appears to be superior to previously studied III-V semiconductors, in the near-infrared spectrum. Optimization of doping and trap densities is expected to result in gain which exceeds the absorption loss, thereby allowing phase conjugation with infrared injection lasers.

  3. Thin-film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Chu, T. L.

    1986-08-01

    The major objective of this work was to demonstrate CdTe devices grown by chemical vapor deposition (CVD) with a total area greater than 1 cm2 and photovoltic efficiencies of at least 13%. During the period covered, various processing steps were investigated for the preparation of thin-film CdTe heterojunction solar cells of the inverted configuration. Glass coated with fluorine-doped tin oxide was used as the substrate. Thin-film heterojunction solar cells were prepared by depositing p-CdTe films on substrates using CVD and close-spaced sublimation (CSS). Cells prepared from CSS CdTe usually have a higher conversion efficiency than those prepared from CVD CdTe, presumably due to the chemical interaction between CdS and CdTe at the interface during the CVD process. The best cell, about 1.2 sq cm in area, had an AM 1.5 (global) efficiency of 10.5%, and further improvements are expected by optimizing the process parameters.

  4. Evaluation of critical materials in five additional advance design photovoltaic cells

    SciTech Connect

    Smith, S.A.; Watts, R.L.; Martin, P.; Gurwell, W.E.

    1981-02-01

    The objective of this study is to identify potential material supply constraints due to the large-scale deployment of five advanced photovoltaic (PV) cell designs, and to suggest strategies to reduce the impacts of these production capacity limitations and potential future material shortages. The Critical Materials Assessment Program (CMAP) screens the designs and their supply chains and identifies potential shortages which might preclude large-scale use of the technologies. The results of the screening of five advanced PV cell designs are presented: (1) indium phosphide/cadmium sulfide, (2) zinc phosphide, (3) cadmium telluride/cadmium sulfide, (4) copper indium selenium, and (5) cadmium selenide photoelectrochemical. Each of these five cells is screened individually assuming that they first come online in 1991, and that 25 Gwe of peak capacity is online by the year 2000. A second computer screening assumes that each cell first comes online in 1991 and that each cell has a 5 GWe of peak capacity by the year 2000, so that the total online capacity for the five cells is 25 GWe. Based on a review of the preliminary baseline screening results, suggestions were made for varying such parameters as the layer thickness, cell production processes, etc. The resulting PV cell characterizations were then screened again by the CMAP computer code. The CMAP methodology used to identify critical materials is described; and detailed characterizations of the advanced photovoltaic cell designs under investigation, descriptions of additional cell production processes, and the results are presented. (WHK)

  5. Energize Your Photovoltaics: NREL's Process Development and Integration Laboratory (PDIL)

    SciTech Connect

    Not Available

    2008-04-01

    The Process Development and Integration Laboratory (PDIL) at the National Renewable Energy Laboratory (NREL) is a unique collaborative facility where industry and universities can work closely with NREL scientists on integrated equipment to answer pressing questions related to photovoltaics (PV). The integrated equipment includes deposition, processing, and characterization tools. We work with a wide range of PV materials, from crystalline silicon to thin-films (amorphous, nano- and microcrystalline silicon, copper indium gallium diselenide, cadmium telluride) to organic PV. The PDIL integrates all the data to: Automate control via recipes; Share data easily and securely; and Facilitate analysis. The PDIL integrates all the tools to: Eliminate air exposure between steps; Sequence steps in any order ; and Incorporate combinatorial techniques. The PDIL integrates all the materials to: Provide greater device flexibility; Allow diverse experts to work together; and Better support industry and universities.

  6. Towards sustainable photovoltaics: the search for new materials.

    PubMed

    Peter, L M

    2011-05-13

    The opportunities for photovoltaic (PV) solar energy conversion are reviewed in the context of projected world energy demands for the twenty-first century. Conventional single-crystal silicon solar cells are facing increasingly strong competition from thin-film solar cells based primarily on polycrystalline absorber materials, such as cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS). However, if PVs are to make a significant contribution to satisfy global energy requirements, issues of sustainability and cost will need to be addressed with increased urgency. There is a clear need to expand the range of materials and processes that is available for thin-film solar cell manufacture, placing particular emphasis on low-energy processing and sustainable non-toxic raw materials. The potential of new materials is exemplified by copper zinc tin sulphide, which is emerging as a viable alternative to the more toxic CdTe and the more expensive CIGS absorber materials. PMID:21464075

  7. Process for making photovoltaic devices and resultant product

    SciTech Connect

    Foote, J.B.; Kaake, S.A.F.; Meyers, P.V.; Nolan, J.F.

    1995-11-28

    A process and apparatus are disclosed for making a large area photovoltaic device that is capable of generating low cost electrical power. The apparatus for performing the process includes an enclosure providing a controlled environment in which an oven is located. At least one and preferably a plurality of deposition stations provide heated vapors of semiconductor material within the oven for continuous elevated temperature deposition of semiconductor material on a sheet substrate including a glass sheet conveyed within the oven. The sheet substrate is conveyed on a roller conveyor within the oven and the semiconductor material whose main layer is cadmium telluride is deposited on an upwardly facing surface of the substrate by each deposition station from a location within the oven above the roller conveyor. A cooling station rapidly cools the substrate after deposition of the semiconductor material thereon to strengthen the glass sheet of the substrate. 10 figs.

  8. Process for making photovoltaic devices and resultant product

    SciTech Connect

    Foote, J.B.; Kaake, S.A.F.; Meyers, P.V.; Nolan, J.F.

    1996-07-16

    A process and apparatus are disclosed for making a large area photovoltaic device that is capable of generating low cost electrical power. The apparatus for performing the process includes an enclosure providing a controlled environment in which an oven is located. At least one and preferably a plurality of deposition stations provide heated vapors of semiconductor material within the oven for continuous elevated temperature deposition of semiconductor material on a sheet substrate including a glass sheet conveyed within the oven. The sheet substrate is conveyed on a roller conveyor within the oven and the semiconductor material whose main layer is cadmium telluride is deposited on an upwardly facing surface of the substrate by each deposition station from a location within the oven above the roller conveyor. A cooling station rapidly cools the substrate after deposition of the semiconductor material thereon to strengthen the glass sheet of the substrate. 10 figs.

  9. Photovoltaic properties of CdTe layers grown by OMVPE

    NASA Astrophysics Data System (ADS)

    Bhimnathwala, H. G.; Taskar, N. R.; Lee, W. I.; Bhat, I.; Ghandhi, S. K.

    Photovoltaic characteristics of single-crystal cadmium telluride epitaxial layers grown by organometallic vapor phase epitaxy (OMVPE) on InSb substrates are reported. Electrical characterization of Schottky solar cells fabricated by depositing thin transparent gold shows that a hole diffusion length of 2 microns can be obtained in n-CdTe. The current flow in the p-n junction in the forward bias is determined by recombination in the depletion region. Theoretical calculations show that n+p CdTe solar cells could have an open-circuit voltage of 0.90 V, a short-circuit current of 22.2 mA/sq cm and an efficiency of 21 percent under AM1.5 illumination.

  10. NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

    SciTech Connect

    Fitzgerald, M.

    1993-05-01

    Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.