Science.gov

Sample records for carbon doped silicon

  1. Doping of silicon by carbon during laser ablation process

    NASA Astrophysics Data System (ADS)

    Raciukaitis, G.; Brikas, M.; Kazlauskiene, V.; Miskinis, J.

    2007-04-01

    Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser power or UV radiation. Carbon ions created bonds with silicon in the depth of silicon. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion was performed to clarify its depth profile in silicon. Photo-chemical reactions of such type changed the structure of material and could be a reason for the reduced quality of machining. A controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

  2. Doping of silicon with carbon during laser ablation process

    NASA Astrophysics Data System (ADS)

    Račiukaitis, G.; Brikas, M.; Kazlauskienė, V.; Miškinis, J.

    2006-12-01

    The effect of laser ablation on properties of remaining material in silicon was investigated. It was found that laser cutting of wafers in the air induced the doping of silicon with carbon. The effect was more distinct when using higher laser power or UV radiation. Carbon ions created bonds with silicon atoms in the depth of the material. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion to clarify its depth profile in silicon was performed. Photochemical reactions of such type changed the structure of material and could be the reason of the reduced machining quality. The controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

  3. Quantum conductance of silicon-doped carbon wire nanojunctions

    PubMed Central

    2012-01-01

    Unknown quantum electronic conductance across nanojunctions made of silicon-doped carbon wires between carbon leads is investigated. This is done by an appropriate generalization of the phase field matching theory for the multi-scattering processes of electronic excitations at the nanojunction and the use of the tight-binding method. Our calculations of the electronic band structures for carbon, silicon, and diatomic silicon carbide are matched with the available corresponding density functional theory results to optimize the required tight-binding parameters. Silicon and carbon atoms are treated on the same footing by characterizing each with their corresponding orbitals. Several types of nanojunctions are analyzed to sample their behavior under different atomic configurations. We calculate for each nanojunction the individual contributions to the quantum conductance for the propagating σ, Π, and σ∗electron incidents from the carbon leads. The calculated results show a number of remarkable features, which include the influence of the ordered periodic configurations of silicon-carbon pairs and the suppression of quantum conductance due to minimum substitutional disorder and artificially organized symmetry on these nanojunctions. Our results also demonstrate that the phase field matching theory is an efficient tool to treat the quantum conductance of complex molecular nanojunctions. PMID:23130998

  4. Suppression of boron-oxygen defects in Czochralski silicon by carbon co-doping

    SciTech Connect

    Wu, Yichao; Yu, Xuegong He, Hang; Chen, Peng; Yang, Deren

    2015-03-09

    We have investigated the influence of carbon co-doping on the formation of boron-oxygen defects in Czochralski silicon. It is found that carbon can effectively suppress the formation of boron-oxygen defects. Based on our experiments and first-principle theoretical calculations, it is believed that this effect is attributed to the formation of more energetically favorable carbon-oxygen complexes. Moreover, the diffusion of oxygen dimers in carbon co-doped silicon also becomes more difficult. All these phenomena should be associated with the tensile stress field induced by carbon doping in silicon.

  5. Interstitial Reactions in Electron Irradiated Carbon-Doped Silicon.

    NASA Astrophysics Data System (ADS)

    Chappell, Simon Peter

    Available from UMI in association with The British Library. Reactions of interstitial atoms in silicon have been investigated using a combination of infra-red (IR) absorption and deep level transient spectroscopies. The defects were introduced into samples by 2 MeV electron irradiation whilst they were maintained below 200 K; the evolution of the damage was studied during subsequent anneals. Two deep levels at Ev + 0.18 eV and Ev + 0.20 eV, observed in p-type (boron-doped) silicon, were attributed to divacancies (VV) perturbed by a nearest or next-nearest neighbour self-interstitial (I) atom. At 130 K these centres either dissociated to produce VV and I defects or they recombined to form isolated vacancies. I atoms are mobile during the irradiation and exchange sites with the substitutional carbon (C _{rm s}) atoms. The resulting interstitial carbon (C_{rm i }) atoms were selectively trapped by other C_{rm s} or oxygen (O_{rm i}) impurities during anneals near 300 K. In oxygen-free silicon, the lifetime ( tau) for the loss of C_{ rm i} atoms from solution was given by tau = 4.7 times 10^{-10}e^ {(0.88rm eV/kT)} s for both C _{rm i}^+ and C _{rm i}^0. A delay was observed between the loss of C_{ rm i} atoms and the formation of dicarbon centres, indicating the formation of an intermediate precursor defect (CC*). IR absorption lines at 860 and 966 cm ^{-1} were observed and assigned to this defect. It was established, later, that the formation of CC* centres did not lead to a modification of the previously determined value of the diffusion coefficient of C _{rm i}^0. In oxygen-rich silicon, the time constant for the loss of C_{rm i}^+ defects from solution (tau = 1 times 10^{ -13}e^{(0.99rm eV/kT) } s) was more than three times larger than that measured for C_{rm i} ^0 (tau = 1 times 10^{-12}e ^{(0.89rm eV/kT)} s). It was proposed that the high electronegativity of the O_{rm i} impurity results in positive charges on neighbouring silicon atoms which repel the

  6. Density functional study on electronic properties of P-doped spinel silicon carbon nitride

    NASA Astrophysics Data System (ADS)

    Zhang, Yufen; Zhao, Xian; Cheng, Xiufeng; Mu, Yuguang

    2008-08-01

    We performed density functional calculations on the electronic properties of P-doped spinel silicon carbon nitride. When Si is replaced by C at the tetrahedral sites of P-doped c-Si 3N 4, the band gap can be adjusted, and an insulator-to-metal transition is predicted to occur at the C-to-Si ratio of 0.27. Finally, some possible examinations and potential applications for the large band-gap reduction are discussed.

  7. Structure and stability of a silicon cluster on sequential doping with carbon atoms

    NASA Astrophysics Data System (ADS)

    AzeezullaNazrulla, Mohammed; Joshi, Krati; Israel, S.; Krishnamurty, Sailaja

    2016-02-01

    SiC is a highly stable material in bulk. On the other hand, alloys of silicon and carbon at nanoscale length are interesting from both technological as well fundamental view point and are being currently synthesized by various experimental groups (Truong et. al., 2015 [26]). In the present work, we identify a well-known silicon cluster viz., Si10 and dope it sequentially with carbon atoms. The evolution of electronic structure (spin state and the structural properties) on doping, the charge redistribution and structural properties are analyzed. It is interesting to note that the ground state SiC clusters prefer to be in the lowest spin state. Further, it is seen that carbon atoms are the electron rich centres while silicon atoms are electron deficient in every SiC alloy cluster. The carbon-carbon bond lengths in alloy clusters are equivalent to those seen in fullerene molecules. Interestingly, the carbon atoms tend to aggregate together with silicon atoms surrounding them by donating the charge. As a consequence, very few Si-Si bonds are noted with increasing concentrations of C atoms in a SiC alloy. Physical and chemical stability of doped clusters is studied by carrying out finite temperature behaviour and adsorbing O2 molecule on Si9C and Si8C2 clusters, respectively.

  8. Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Xie, Yuntao

    2016-08-01

    Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

  9. Preparation of superior lubricious amorphous carbon films co-doped by silicon and aluminum

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Yang, Jun; Zheng, Jianyun; Liang, Yongmin; Liu, Weimin

    2011-09-01

    Silicon (Si) and aluminum (Al) co-doped amorphous carbon films ((Si, Al)-C:H) were deposited on Si and stainless steel substrates by radio frequency (13.56 MHz) magnetron sputtering. The Al and Si were found to jointly regulate the hybridized carbon bonds. Mechanical properties of the films were detected by nano-indention and scratch tests. The nano-indention results revealed that all the samples exhibited good elastic recovery rate, among which the highest one was beyond 84%. Besides co-regulating the hybridizations of carbon, the co-doped Si and Al also had a common regulation on the mechanical and tribological properties. Especially, the film containing 1.6 at. % of Si and 0.9 at. % of Al showed a super-low friction (< 0.01) and a superior wear resistance in ambient air.

  10. Density functional study on electronic properties of P-doped spinel silicon carbon nitride

    SciTech Connect

    Zhang Yufen; Zhao Xian Cheng Xiufeng; Mu Yuguang

    2008-08-15

    We performed density functional calculations on the electronic properties of P-doped spinel silicon carbon nitride. When Si is replaced by C at the tetrahedral sites of P-doped c-Si{sub 3}N{sub 4}, the band gap can be adjusted, and an insulator-to-metal transition is predicted to occur at the C-to-Si ratio of 0.27. Finally, some possible examinations and potential applications for the large band-gap reduction are discussed. - Graphical abstract: We performed density functional calculations to predict the insulator-to-metal transition by replacing Si by C at the tetrahedral sites of P-doped c-Si{sub 3}N{sub 4}.

  11. Interstitial carbon formation in irradiated copper-doped silicon

    SciTech Connect

    Yarykin, N. A.; Weber, J.

    2015-06-15

    The influence of a copper impurity on the spectrum of defects induced in p-Si crystals containing a low oxygen concentration by irradiation with electrons with an energy of 5 MeV at room temperature is studied by deep-level transient spectroscopy. It is found that interstitial carbon atoms (C{sub i}) which are the dominant defects in irradiated samples free of copper are unobservable immediately after irradiation, if the concentration of mobile interstitial copper atoms (Cu{sub i}) is higher than the concentration of radiation defects. This phenomenon is attributed to the formation of (Cu{sub i}, C{sub i}) complexes, which do not introduce levels into the lower half of the band gap. It is shown that these complexes dissociate upon annealing at temperatures of 300–340 K and, thus, bring about the appearance of interstitial carbon.

  12. Carbon, oxygen and intrinsic defect interactions in germanium-doped silicon

    NASA Astrophysics Data System (ADS)

    Londos, C. A.; Sgourou, E. N.; Chroneos, A.; Emtsev, V. V.

    2011-10-01

    Production and annealing of oxygen-vacancy (VO) and oxygen-carbon (CiOi, CiOiI) defects in germanium-doped Czochralski-grown silicon (Cz-Si) containing carbon are investigated. All the samples were irradiated with 2 MeV fast electrons. Radiation-produced defects are studied using infrared spectroscopy by monitoring the relevant bands in optical spectra. For the VO defects, it is established that the doping with Ge affects the thermal stability of VO (830 cm-1) defects as well as their fraction converted to VO2 (888 cm-1) defects. In Ge-free samples containing carbon, it was found that carbon impurity atoms do not affect the thermal stability of VO defects, although they affect the fraction of VO defects that is converted to VO2 complexes. Considering the oxygen-carbon complexes, it is established that the annealing of the 862 cm-1 band associated with the CiOi defects is accompanied with the emergence of the 1048 cm-1 band, which has earlier been assigned to the CsO2i center. The evolution of the CiOiI bands is also traced. Ge doping does not seem to affect the thermal stability of the CiOi and CiOiI defects. Density functional theory (DFT) calculations provide insights into the stability of the defect clusters (VO, CiOi, CiOiI) at an atomic level. Both experimental and theoretical results are consistent with the viewpoint that Ge affects the stability of the VO but does not influence the stability of the oxygen-carbon clusters. DFT calculations demonstrate that C attracts both Oi and VO pairs predominately forming next nearest neighbor clusters in contrast to Ge where the interactions with Oi and VO are more energetically favorable at nearest neighbor configurations.

  13. Bacterial attachment and removal properties of silicon- and nitrogen-doped diamond-like carbon coatings.

    PubMed

    Zhao, Qi; Su, Xueju; Wang, Su; Zhang, Xiaoling; Navabpour, Parnia; Teer, Dennis

    2009-01-01

    Si- and N-doped diamond-like carbon (DLC) coatings with various Si and N contents were deposited on glass slides using magnetron sputter ion-plating and plasma-enhanced chemical vapour deposition. Surface energy analysis of the DLC coatings revealed that with increasing Si content, the electron acceptor gamma(s)(+) value decreased while the electron donor gamma(s)(-) value increased. The antifouling property of DLC coatings was evaluated with the bacterium, Pseudomonas fluorescens, which is one of the most common microorganisms forming biofilms on the surface of heat exchangers in cooling water systems. P. fluorescens had a high value of the gamma(s)(-) component (69.78 mN m(-1)) and a low value of the gamma(s)(+) component (5.97 mN m(-1)), and would be negatively charged with the zeta potential of -16.1 mV. The experimental results showed that bacterial removal by a standardised washing procedure increased significantly with increasing electron donor gamma(s)(-) values and with decreasing electron acceptor gamma(s)(+) values of DLC coatings. The incorporation of 2%N into the Si-doped DLC coatings further significantly reduced bacterial attachment and significantly increased ease of removal. The best Si-N-doped DLC coatings reduced bacterial attachment by 58% and increased removal by 41%, compared with a silicone coating, Silastic T2. Bacterial adhesion strength on the DLC coatings is explained in terms of thermodynamic work of adhesion. PMID:19283517

  14. Stabilization of boron carbide via silicon doping

    NASA Astrophysics Data System (ADS)

    Proctor, J. E.; Bhakhri, V.; Hao, R.; Prior, T. J.; Scheler, T.; Gregoryanz, E.; Chhowalla, M.; Giulani, F.

    2015-01-01

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  15. Silicon-doped carbon nanotubes: a potential resource for the detection of chlorophenols/chlorophenoxy radicals

    NASA Astrophysics Data System (ADS)

    Jiang, Haihui; Zhang, Dongju; Wang, Ruoxi

    2009-04-01

    Chlorinated phenols and chlorophenoxy radicals are known as predominant precursors for forming polychlorinated dibenzo-p-dioxins and dibenzofurans (PCDD/PCDF), which are highly carcinogenic and persistent organic pollutants (POPs). Density functional theory (DFT) calculations have been carried out to explore the potential possibility of carbon nanotubes (CNTs) serving as the resource for detecting and/or adsorbing these PCDD/PCDF precursors. Based on the calculated results on a pristine (8, 0) CNT and a Si-doped (8, 0) CNT with and without the presence of a 2-chlorophenol (2-CP)/2-chlorophenoxy radical (2-CPR), the typical representative of chlorophenols/chlorophenoxy radicals, we propose that pristine carbon nanotubes (CNTs) may be unsuitable for the desired applications due to their poor capability for catching chlorinated phenols/chlorophenoxy radicals, on the other hand, Si-doped CNTs are expected to be a potential resource for detecting and/or adsorbing (concentrating) these PCDD/PCDF precursors. The present results provide a guide to the relevant experimentalists, who are exploring novel applications of CNT-based materials in nanoscience and nanotechnology, and/or searching for suitable resources for detecting chlorophenols/chlorophenoxy radicals.

  16. Mechanism of formation of ultrashallow thermal donors in carbon-doped oxygen-rich monocrystalline silicon preannealed to introduce hydrogen

    NASA Astrophysics Data System (ADS)

    Hara, Akito; Awano, Teruyoshi

    2015-10-01

    We previously reported on ultrashallow thermal donors (USTDs) in carbon-doped oxygen-containing monocrystalline silicon (Czochralski-grown, CZ-Si) crystals that were preannealed to introduce hydrogen at 1300 °C, and then annealed at 480 °C. In this study, the formation mechanism of the USTDs was evaluated. It was observed that an increase in the intensity of UTSDs leads to a reduction in that of hydrogen-related shallow thermal donors [STD(H)s], and the sum of the area intensities of the lines in the transmission spectra of USTDs and STD(H)s is nearly constant when the silicon crystals are annealed for longer than 10 h at 480 °C. We also found some thermally activated processes linked to the formation of USTDs. We thus conclude that the mechanism is composed of the high-speed formation of STD(H)s in the first stage and carbon modulation of the electronic structure of STD(H)s in the second stage.

  17. The effects of silicon doping on the performance of PMAN carbon anodes in Li-ion cells

    SciTech Connect

    Guidotti, R.A.; Johnson, B.J.; Even, W. Jr.

    1996-05-01

    Carbons derived from polymethylacrylonitrile (PMAN) have been studied for use as intercalation anodes in Li-ion cells. The effect of Si doping upon the electrochemical performance of PMAN carbons was studied using tetravinylsilane (TVS) and tetramethysilane (TMS) as sources of Si during the formation of the PMAN precursors. The carbons were characterized by galvanostatic cycling, cyclic voltammetry, and complex impedance. The presence of 9 to 11 w/o Si in the PMAN lattice greatly increased the irreversible capacity of these materials.

  18. Transmutation doping of silicon solar cells

    NASA Technical Reports Server (NTRS)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  19. Survivability of Silicon-Doped Diamond-Like Carbon Films in Energetic Atomic/Molecular Oxygen Beam Environments

    NASA Astrophysics Data System (ADS)

    Tagawa, Masahito; Kishida, Kazuhiro; Yokota, Kumiko; Matsumoto, Koji; Yoshigoe, Akitaka; Teraoka, Yuden; Zhang, Jianming; Minton, Timothy K.

    Volatile products were measured from two types of diamond-like carbon films under the hyperthermal atomic oxygen (AO) beam bombardment. It was clearly observed that CO and CO2 were formed at the conventional hydrogenated DLC surface when exposed to hyperthermal AO beam. Desorption rates of CO and CO2 are constant with AO fluence which reflects the constant erosion rate of the hydrogenated DLC. In contrast, Si-doped DLC shows decrease in amount of CO and CO2 with increasing AO fluence. Oxidation of Si atoms at the DLC surface was detected by X-ray photoelectron spectroscopy, confirming the formation of SiO2 film formed at the DLC surface that could prevent AO reaction with C atoms in DLC which leads to loss of DLC. Since a self-healing capability can be expected on Si-doped DLC, metal doping is a promising technology for space application of DLC.

  20. Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells

    SciTech Connect

    Lee, C.H.; Lim, K.S.

    1998-01-01

    A boron-doped hydrogenated amorphous diamondlike carbon (a-DLC:H) was prepared using a mercury-sensitized photochemical vapor deposition (photo-CVD) method. The source gases were B{sub 2}H{sub 6} and C{sub 2}H{sub 4}. By increasing the boron doping ratio (B{sub 2}H{sub 6}/C{sub 2}H{sub 4}) from 0 to 12000 ppm, the dark conductivity increased from {approximately}10{sup {minus}9} to {approximately}10{sup {minus}7} S/cm. A boron-doped a-DLC:H with an energy band gap of 3.8 eV and a dark conductivity of 1.3{times}10{sup {minus}8} S/cm was obtained at a doping ratio of 3600 ppm. By using this film, amorphous silicon (a-Si) solar cells with a novel p-a-DLC:H/p-a-SiC double p-layer structure were fabricated using the photo-CVD method and the cell photovoltaic characteristics were investigated as a function of a-DLC:H layer thickness. The open circuit voltage increased from 0.766 V for the conventional cell with a 40-{Angstrom}-thick p-a-SiC to 0.865 V for the cell with a p-a-DLC:H (15 {Angstrom})/p-a-SiC (40 {Angstrom}) double p-layer structure. The thin ({lt}15 {Angstrom}) p-a-DLC:H layer proved to be an excellent hole emitter as a wide band gap window layer. {copyright} {ital 1998 American Institute of Physics.}

  1. Boron-silicon solid solution: synthesis and crystal structure of a carbon-doped boron-rich SiB{sub n} (n{approx}30) compound

    SciTech Connect

    Roger, Jerome; Babizhetskyy, Volodymyr; Halet, Jean-Francois; Guerin, Roland . E-mail: roland.guerin@univ-rennes1.fr

    2004-11-01

    The carbon-doped SiB{sub 3}{approx}{sub 30} compound was obtained during attempts to synthesize by arc-melting boron-rich binaries belonging to the SiB{sub n} solid solution (13n<32). Its crystal structure was determined from X-ray single-crystal intensity data (R-3m, Z=1, a=11.0152(3)A, and c=23.8625(8)A) and led to the final formula SiB{sub {approx}}{sub 30}C{sub 0.35}. Carbon is incorporated fortuitously in the structure. The boron framework of these phases slightly differs from that encountered in {beta}-boron. The salient characteristic is the partial occupancy of three interstitial boron sites by silicon and one by carbon atoms. This is in contrast with the structurally related compounds such as SiB{sub {approx}}{sub 36}, CrB{sub {approx}}{sub 41}, or FeB{sub {approx}}{sub 40}, in which only two interstitial sites are partially occupied.

  2. Freestanding doped silicon nanocrystals synthesized by plasma

    NASA Astrophysics Data System (ADS)

    Ni, Zhenyi; Pi, Xiaodong; Ali, Muhammad; Zhou, Shu; Nozaki, Tomohiro; Yang, Deren

    2015-08-01

    Freestanding silicon nanocrystals (Si NCs) have recently gained great popularity largely due to their easily accessible surface and flexible incorporation into device structures. In the past decade plasmas have been increasingly employed to synthesize freestanding Si NCs. As freestanding Si NCs move closer to applications in a variety of fields such as electronics, thermoelectrics and lithium-ion batteries, doping becomes more imperative. Such a context explains the current great interest in plasma-synthesized doped freestanding Si NCs. In this work we review the synthesis of freestanding doped Si NCs by plasma. Doping-induced structural, electronic, optical and oxidation properties of Si NCs are discussed. We also review the applications of plasma-synthesized doped freestanding Si NCs that have been demonstrated so far. The development of freestanding doped Si NCs synthesized by plasma in the future is envisioned.

  3. Doping silicon nanocrystals and quantum dots.

    PubMed

    Oliva-Chatelain, Brittany L; Ticich, Thomas M; Barron, Andrew R

    2016-01-28

    The ability to incorporate a dopant element into silicon nanocrystals (NC) and quantum dots (QD) is one of the key technical challenges for the use of these materials in a number of optoelectronic applications. Unlike doping of traditional bulk semiconductor materials, the location of the doping element can be either within the crystal lattice (c-doping), on the surface (s-doping) or within the surrounding matrix (m-doping). A review of the various synthetic strategies for doping silicon NCs and QDs is presented, concentrating on the efficacy of the synthetic routes, both in situ and post synthesis, with regard to the structural location of the dopant and the doping level. Methods that have been applied to the characterization of doped NCs and QDs are summarized with regard to the information that is obtained, in particular to provide researchers with a guide to the suitable techniques for determining dopant concentration and location, as well as electronic and photonic effectiveness of the dopant. PMID:26727507

  4. Doping silicon nanocrystals and quantum dots

    NASA Astrophysics Data System (ADS)

    Oliva-Chatelain, Brittany L.; Ticich, Thomas M.; Barron, Andrew R.

    2016-01-01

    The ability to incorporate a dopant element into silicon nanocrystals (NC) and quantum dots (QD) is one of the key technical challenges for the use of these materials in a number of optoelectronic applications. Unlike doping of traditional bulk semiconductor materials, the location of the doping element can be either within the crystal lattice (c-doping), on the surface (s-doping) or within the surrounding matrix (m-doping). A review of the various synthetic strategies for doping silicon NCs and QDs is presented, concentrating on the efficacy of the synthetic routes, both in situ and post synthesis, with regard to the structural location of the dopant and the doping level. Methods that have been applied to the characterization of doped NCs and QDs are summarized with regard to the information that is obtained, in particular to provide researchers with a guide to the suitable techniques for determining dopant concentration and location, as well as electronic and photonic effectiveness of the dopant.

  5. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  6. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

    1995-01-01

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  7. Aluminum doping improves silicon solar cells

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Aluminum doped silicon solar cells with resistivities in the 10- to 20-ohm centimeter range have broad spectral response, high efficiency and long lifetimes in nuclear radiation environments. Production advantages include low material rejection and increased production yields, and close tolerance control.

  8. Silicon solar cells improved by lithium doping

    NASA Technical Reports Server (NTRS)

    Berman, P. A.

    1970-01-01

    Results of conference on characteristics of lithium-doped silicon solar cells and techniques required for fabrication indicate that output of cells has been improved to point where cells exhibit radiation resistance superior to those currently in use, and greater control and reproducibility of cell processing have been achieved.

  9. Plasma Deposition of Doped Amorphous Silicon

    NASA Technical Reports Server (NTRS)

    Calcote, H. F.

    1985-01-01

    Pair of reports present further experimental details of investigation of plasma deposition of films of phosphorous-doped amosphous silicon. Probe measurements of electrical resistance of deposited films indicated films not uniform. In general, it appeared that resistance decreased with film thickness.

  10. Further characterization of IRAS doped silicon detectors

    NASA Technical Reports Server (NTRS)

    1977-01-01

    Measurements made on several doped-silicon detectors are reported. Topics discussed include: Si:Sb detector, the effects of detector bias on dielectric relaxation; characterization of spontaneous noise and gamma-induced spikes and their circumvention; and the time response of two detectors to step changes in the background photon flux density. Several potential system programs are indicated.

  11. Effect of tetramethylsilane flow on the deposition and tribological behaviors of silicon doped diamond-like carbon rubbed against poly(oxymethylene)

    NASA Astrophysics Data System (ADS)

    Deng, Xingrui; Lim, Yankuang; Kousaka, Hiroyuki; Tokoroyama, Takayuki; Umehara, Noritsugu

    2014-11-01

    In this study, silicon doped diamond-like carbon (Si-DLC) was deposited on stainless steel (JIS SUS304) by using surface wave-excited plasma (SWP). The effects of tetramethylsilane (TMS) flow on the composition, topography, mechanical properties and tribological behavior were investigated. Pin-on-disc tribo-meter was used to investigate the tribological behavior of the Si-DLC coating rubbed against poly(oxymethylene) (POM). The results show that the deposition rate, roughness of Si-DLC increased and the hardness of Si-DLC decreased with the increase of TMS flow rate from 2 to 4 sccm; the roughness increase therein led to the increase of ploughing term of friction. The increase of adhesion term was also seen with the increase of TMS flow rate, being attributed to the decrease of hydrogen concentration in the coating. It was considered that more POM transferred onto the Si-DLC deposited at higher TMS flow rate due to larger heat generation by friction.

  12. Piezoresistance and hole transport in beryllium-doped silicon.

    NASA Technical Reports Server (NTRS)

    Littlejohn, M. A.; Robertson, J. B.

    1972-01-01

    The resistivity and piezoresistance of p-type silicon doped with beryllium have been studied as a function of temperature, crystal orientation, and beryllium doping concentration. It is shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gauge factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, while the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

  13. The influence of Cu-doping on aluminum nitride, silicon carbide and boron nitride nanotubes’ ability to detect carbon dioxide; DFT study

    NASA Astrophysics Data System (ADS)

    Mahdavifar, Zabiollah; Abbasi, Nasibeh

    2014-02-01

    In this research, the potential use of Cu-functionalized [4,4] silicon carbide (SiC), aluminum nitride (AlN) and boron nitride (BN) single-walled nanotubes as nanodevices for CO2 monitoring is investigated. It is found that Cu-doping the different sites of the considered nanotubes and combining these nanotubes with CO2 gas molecules are both exothermic processes, and the relaxed geometries are stable. Our results reveal that the CO2 gas molecules can be strongly physisorbed on the Cu-doped nanotubes, accompanied by large adsorption energy. Compared with the weak adsorption of CO2 molecule onto pristine BNNT and SiCNT, the CO2 molecule tends to be strongly physisorbed onto Cu-decorated BNNT and SiCNT with an appreciable adsorption energy. Furthermore, the results indicate that Cu-functionalized SiCNT is more favorable than Cu-doped BNNT and AlNNT structures for CO2 adsorption. Natural bond orbital analysis indicates that the adsorption of a CO2 molecule onto Cu-doped nanotubes is influenced by the electronic conductance and mechanical properties of the nanotube, which could serve as a signal for a gas sensor. It appears that the considerable charge transfer from the Cu-doped nanotubes to a CO2 molecule reduces the energy gap. These observations suggest that the Cu-doped-SiCNT, -BNNT and -AlNNT can be introduced as promising candidates for gas sensor devices that detect CO2 molecules.

  14. Dispersion toughened silicon carbon ceramics

    DOEpatents

    Wei, G.C.

    1984-01-01

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  15. Chemical vapor deposition of boron-doped hydrogenated amorphous silicon

    SciTech Connect

    Ellis F.B. Jr.; Delahoy, A.E.

    1985-07-15

    Deposition conditions and film properties for a variety of boron-doped hydrogenated amorphous silicon films and silicon-carbon films produced by chemical vapor deposition (CVD) are discussed. Deposition gases include monosilane, disilane, trisilane, and acetylene. Two types of optically wide band-gap p layers are obtained. One of these window p layers (without carbon) has been extensively tested in photovoltaic devices. Remarkably, this p layer can be deposited between about 200 to 300 /sup 0/C. A typical open circuit voltage in an all CVD p-i-n device is 0.70--0.72 V, and in a hybrid device where the i and n layers are deposited by glow discharge, 0.8--0.83 V.

  16. Magnetism and the absence of superconductivity in the praseodymium–silicon system doped with carbon and boron

    SciTech Connect

    de la Venta, J.; Basaran, Ali C.; Grant, T.; Gallardo-Amores, J. M.; Ramirez, J. G.; Alario-Franco, M. A.; Fisk, Z.; Schuller, Ivan K.

    2013-08-01

    We searched for new structural, magnetic and superconductivity phases in the Pr–Si system using high-pressure high-temperature and arc melting syntheses. Both high and low Si concentration areas of the phase diagram were explored. Although a similar approach in the La–Si system produced new stable superconducting phases, in the Pr–Si system we did not find any new superconductors. At low Si concentrations, the arc-melted samples were doped with C or B. It was found that addition of C gave rise to multiple previously unknown ferromagnetic phases. Furthermore, X-ray refinement of the undoped samples confirmed the existence of the so far elusive Pr3Si2 phase.

  17. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    2002-01-01

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  18. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    1999-01-01

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  19. Investigation of intrinsic gettering for germanium doped Czochralski silicon wafer

    NASA Astrophysics Data System (ADS)

    Chen, Jiahe; Yang, Deren; Ma, Xiangyang; Wang, Weiyan; Zeng, Yuheng; Que, Duanlin

    2007-06-01

    The intrinsic gettering (IG) effects in a germanium-doped Czochralski (GCz) silicon wafer have been investigated through a processing simulation of dynamic random access memory making and an evaluation on IG capability for copper contamination. It has been suggested that both the good quality defect-free denuded zones (DZs) and the high-density bulk microdefect (BMD) regions could be generated in GCz silicon wafer during device fabrication. Meanwhile, it was also indicated that the tiny oxygen precipitates were hardly presented in DZs of silicon wafer with the germanium doping. Furthermore, it was found in GCz silicon wafer that the BMDs were higher in density but smaller in size in contrast to that in conventional Cz silicon wafer. Promoted IG capability for metallic contamination was therefore induced in the germanium-doped Cz silicon wafer. A mechanism of the germanium doping on oxygen precipitation in Cz silicon was discussed, which was based on the hypothesis of germanium-related complexes.

  20. Superlattice doped layers for amorphous silicon photovoltaic cells

    DOEpatents

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  1. Hydrogen migration in phosphorous doped polycrystalline silicon

    SciTech Connect

    Nickel, N.H.; Kaiser, I.

    1998-12-31

    Hydrogen diffusion in phosphorous doped polycrystalline silicon was investigated by deuterium diffusion experiments. The presence of phosphorous enhances hydrogen diffusion. For high hydrogen concentrations the activation energy of the effective diffusion-coefficient amounts to 0.25--0.35 eV. At low hydrogen concentrations diffusion is governed by deep traps that are present in an appreciable concentration of 6 {times} 10{sup 18}--10{sup 19} cm{sup {minus}3}. The hydrogen chemical-potential, {mu}{sub H}, decreases with increasing temperature at a rate of {approx}0.002 eV/K. The data are discussed in terms of a two-level model used to describe hydrogen diffusion in amorphous and undoped polycrystalline silicon.

  2. Pyrolytic carbon coated black silicon.

    PubMed

    Shah, Ali; Stenberg, Petri; Karvonen, Lasse; Ali, Rizwan; Honkanen, Seppo; Lipsanen, Harri; Peyghambarian, N; Kuittinen, Markku; Svirko, Yuri; Kaplas, Tommi

    2016-01-01

    Carbon is the most well-known black material in the history of man. Throughout the centuries, carbon has been used as a black material for paintings, camouflage, and optics. Although, the techniques to make other black surfaces have evolved and become more sophisticated with time, carbon still remains one of the best black materials. Another well-known black surface is black silicon, reflecting less than 0.5% of incident light in visible spectral range but becomes a highly reflecting surface in wavelengths above 1000 nm. On the other hand, carbon absorbs at those and longer wavelengths. Thus, it is possible to combine black silicon with carbon to create an artificial material with very low reflectivity over a wide spectral range. Here we report our results on coating conformally black silicon substrate with amorphous pyrolytic carbon. We present a superior black surface with reflectance of light less than 0.5% in the spectral range of 350 nm to 2000 nm. PMID:27174890

  3. Pyrolytic carbon coated black silicon

    NASA Astrophysics Data System (ADS)

    Shah, Ali; Stenberg, Petri; Karvonen, Lasse; Ali, Rizwan; Honkanen, Seppo; Lipsanen, Harri; Peyghambarian, N.; Kuittinen, Markku; Svirko, Yuri; Kaplas, Tommi

    2016-05-01

    Carbon is the most well-known black material in the history of man. Throughout the centuries, carbon has been used as a black material for paintings, camouflage, and optics. Although, the techniques to make other black surfaces have evolved and become more sophisticated with time, carbon still remains one of the best black materials. Another well-known black surface is black silicon, reflecting less than 0.5% of incident light in visible spectral range but becomes a highly reflecting surface in wavelengths above 1000 nm. On the other hand, carbon absorbs at those and longer wavelengths. Thus, it is possible to combine black silicon with carbon to create an artificial material with very low reflectivity over a wide spectral range. Here we report our results on coating conformally black silicon substrate with amorphous pyrolytic carbon. We present a superior black surface with reflectance of light less than 0.5% in the spectral range of 350 nm to 2000 nm.

  4. Pyrolytic carbon coated black silicon

    PubMed Central

    Shah, Ali; Stenberg, Petri; Karvonen, Lasse; Ali, Rizwan; Honkanen, Seppo; Lipsanen, Harri; Peyghambarian, N.; Kuittinen, Markku; Svirko, Yuri; Kaplas, Tommi

    2016-01-01

    Carbon is the most well-known black material in the history of man. Throughout the centuries, carbon has been used as a black material for paintings, camouflage, and optics. Although, the techniques to make other black surfaces have evolved and become more sophisticated with time, carbon still remains one of the best black materials. Another well-known black surface is black silicon, reflecting less than 0.5% of incident light in visible spectral range but becomes a highly reflecting surface in wavelengths above 1000 nm. On the other hand, carbon absorbs at those and longer wavelengths. Thus, it is possible to combine black silicon with carbon to create an artificial material with very low reflectivity over a wide spectral range. Here we report our results on coating conformally black silicon substrate with amorphous pyrolytic carbon. We present a superior black surface with reflectance of light less than 0.5% in the spectral range of 350 nm to 2000 nm. PMID:27174890

  5. Amorphous Silicon-Carbon Nanostructure Solar Cells

    NASA Astrophysics Data System (ADS)

    Schriver, Maria; Regan, Will; Loster, Matthias; Zettl, Alex

    2011-03-01

    Taking advantage of the ability to fabricate large area graphene and carbon nanotube networks (buckypaper), we produce Schottky junction solar cells using undoped hydrogenated amorphous silicon thin films and nanostructured carbon films. These films are useful as solar cell materials due their combination of optical transparency and conductance. In our cells, they behave both as a transparent conductor and as an active charge separating layer. We demonstrate a reliable photovoltaic effect in these devices with a high open circuit voltage of 390mV in buckypaper devices. We investigate the unique interface properties which result in an unusual J-V curve shape and optimize fabrication processes for improved solar conversion efficiency. These devices hold promise as a scalable solar cell made from earth abundant materials and without toxic and expensive doping processes.

  6. Interaction of nucleobases with silicon doped and defective silicon doped graphene and optical properties.

    PubMed

    Mudedla, Sathish Kumar; Balamurugan, Kanagasabai; Kamaraj, Manoharan; Subramanian, Venkatesan

    2016-01-01

    The interaction of nucleobases (NBs) with the surface of silicon doped graphene (SiGr) and defective silicon doped graphene (dSiGr) has been studied using electronic structure methods. A systematic comparison of the calculated interaction energies (adsorption strength) of NBs with the surface of SiGr and dSiGr with those of pristine graphene (Gr) has also been made. The doping of graphene with silicon increases the adsorption strength of NBs. The introduction of defects in SiGr further enhances the strength of interaction with NBs. The appreciable stability of complexes (SiGr-NBs and dSiGr-NBs) arises due to the partial electrostatic and covalent (Si···O(N)) interaction in addition to π-π stacking. The interaction energy increases with the size of graphene models. The strong interaction between dSiGr-NBs and concomitant charge transfer causes significant changes in the electronic structure of dSiGr in contrast to Gr and SiGr. Further, the calculated optical properties of all the model systems using time dependent density functional theory (TD-DFT) reveal that absorption spectra of SiGr and dSiGr undergo appreciable changes after adsorption of NBs. Thus, the significant variations in the HOMO-LUMO gap and absorption spectra of dSiGr after interaction with the NBs can be exploited for possible applications in the sensing of DNA nucleobases. PMID:26607270

  7. Guided photoluminescence study of Nd-doped silicon rich silicon oxide and silicon rich silicon nitride waveguides

    NASA Astrophysics Data System (ADS)

    Pirasteh, Parastesh; Charrier, Joël; Dumeige, Yannick; Doualan, Jean-Louis; Camy, Patrice; Debieu, Olivier; Liang, Chuan-hui; Khomenkova, Larysa; Lemaitre, Jonathan; Boucher, Yann G.; Gourbilleau, Fabrice

    2013-07-01

    Planar waveguides made of Nd3+-doped silicon rich silicon oxide (SRSO) and silicon rich silicon nitride (SRSN) have been fabricated by reactive magnetron sputtering and characterized with special emphasis on the comparison of the guided photoluminescence (PL) properties of these two matrices. Guided fluorescence excited by top surface pumping at 488 nm on planar waveguides was measured as a function of the distance between the excitation area and the output of the waveguide, as well as a function of the pump power density. The PL intensity increased linearly with pump power without any saturation even at high power. The linear intensity increase of the Nd3+ guided PL under a non-resonant excitation (488 nm) confirms the efficient coupling between either Si-np and rare-earth ions for SRSO or radiative defects and rare earth ions for SRSN. The guided fluorescences at 945 and 1100 nm were observed until 4 mm and 8 mm of the output of the waveguide for Nd3+ doped SRSO and SRSN waveguides, respectively. The guided fluorescence decays of Nd3+-doped-SRSO and -SRSN planar waveguides have been measured and found equal to 97 μs ±7 and 5 μs ± 2, respectively. These results show notably that the Nd3+-doped silicon rich silicon oxide is a very promising candidate on the way to achieve a laser cavity at 1.06 μm.

  8. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    NASA Astrophysics Data System (ADS)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  9. Heavy doping effects in high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1984-01-01

    Several of the key parameters describing the heavily doped regions of silicon solar cells are examined. The experimentally determined energy gap narrowing and minority carrier diffusivity and mobility are key factors in the investigation.

  10. Neutron transmutation doped silicon — technological and economic aspects

    NASA Astrophysics Data System (ADS)

    von Ammon, W.

    1992-01-01

    Neutron transmutation doping of silicon was commercially introduced in 1973. The advent of this technique was a great step ahead in the development of high power semiconductor devices as it allows tight resistivity tolerances and excellent homogeneity of the silicon base material. These properties are indispensible for the functioning of today's power devices and cannot be provided by conventional doping methods. Neutron transmutation doping has become a mature and well established technology and a substantial source of income for numerous research reactors throughout the world. First, this paper will present a brief historical review of the early days of silicon irradiation. Then, the ingot preparation and the irradiation procedure as well as the subsequent ingot annealing and characterization are described. Furthermore, problems related to the irradiation damage of the silicon lattice are discussed. Finally, the market development and economic aspects of NTD silicon are considered and an outlook is given on the available irradiation capacity in the future.

  11. Laser doping for high-efficiency silicon solar cells

    NASA Astrophysics Data System (ADS)

    Jäger, Ulrich; Wolf, Andreas; Steinhauser, Bernd; Benick, Jan; Nekarda, Jan; Preu, Ralf

    2012-10-01

    Selective laser doping is a versatile tool for the local adaption of doping profiles in a silicon substrate. By adjusting the laser fluence as well as the pulse width the maximum melt depth in the silicon can be controlled. Longer pulses lead to lower temperatures in the material and can help to enlarge the process window as ablation sets in at higher fluencies. For the fabrication of highly efficient silicon solar cells, laser doping can be used for efficiency improvement and process simplification. In passivated emitter and rear cells (PERC), selective laser doping can be used for selective emitter formation. Employing such a process, an efficiency boost of Δ ƞ= 0.4%abs was observed on commercial Cz-Si material. Laser doping was also used for process simplification for the fabrication of locally doped point contacts at the rear of a solar cell. A simple approach employing a doped passivation layer and a laser doping process allows for efficiencies beyond 22% on high quality n-type silicon.

  12. Excess carbon in silicon carbide

    SciTech Connect

    Shen, X; Oxley, Mark P.; Puzyrev, Y; Tuttle, B R; Duscher, Gerd; Pantelides, Sokrates T.

    2010-01-01

    The application of SiC in electronic devices is currently hindered by low carrier mobility at the SiC/SiO{sub 2} interfaces. Recently, it was reported that 4H-SiC/SiO{sub 2} interfaces might have a transition layer on the SiC substrate side with C/Si ratio as high as 1.2, suggesting that carbon is injected into the SiC substrate during oxidation or other processing steps. We report finite-temperature quantum molecular dynamics simulations that explore the behavior of excess carbon in SiC. For SiC with 20% excess carbon, we find that, over short time ({approx} 24 ps), carbon atoms bond to each other and form various complexes, while the silicon lattice is largely unperturbed. These results, however, suggest that at macroscopic times scale, C segregation is likely to occur; therefore a transition layer with 20% extra carbon would not be stable. For a dilute distribution of excess carbon, we explore the pairing of carbon interstitials and show that the formation of dicarbon interstitial cluster is kinetically very favorable, which suggests that isolated carbon clusters may exist inside SiC substrate.

  13. Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor

    NASA Astrophysics Data System (ADS)

    Ikenaga, Kazutada; Mishima, Akira; Yano, Yoshiki; Tabuchi, Toshiya; Matsumoto, Koh

    2016-05-01

    The relationship between the carbon concentration and electrical characteristics of silicon-doped AlGaN (Al > 0.5) was investigated using a high-flow-rate metal organic vapor phase epitaxy (MOVPE) reactor. The carbon concentration and electrical properties of AlGaN (Al > 0.5) were measured as a function of the growth rate, V/III ratio, and growth temperature. The growth rate of Al0.6Ga0.4N was linearly controlled up to 7.2 µm/h under a constant ammonia (NH3) flow rate. However, a decrease in V/III ratio resulted in an increase in carbon concentration to 8 × 1017 cm‑3. With increased growth temperature, the carbon concentration decreased to less than 2 × 1017 cm‑3 without showing any reduction in growth rate. As a result, n-type Al0.6Ga0.4N with a carrier concentration of 5.4 × 1018 cm‑3 and a resistivity of 2.2 × 10‑2 Ω·cm was obtained.

  14. Surface passivation of heavily boron or phosphorus doped crystalline silicon utilizing amorphous silicon

    NASA Astrophysics Data System (ADS)

    Carstens, K.; Dahlinger, M.

    2016-05-01

    Excellent surface passivation of heavily boron or phosphorus doped crystalline silicon is presented utilizing undoped hydrogenated amorphous silicon (a-Si:H). For passivating boron doped crystalline silicon surfaces, amorphous silicon needs to be deposited at low temperatures 150°C ≤Tdep≤200°C , leading to a high bandgap. In contrast, low bandgap amorphous silicon causes an inferior surface passivation of highly boron doped crystalline silicon. Boron doping in crystalline silicon leads to a shift of the Fermi energy towards the valence band maximum in the undoped a-Si:H. A simulation, implementing dangling bond defects according to the defect pool model, shows this shift in the undoped a-Si:H passivation to be more pronounced if the a-Si:H has a lower bandgap. Hence, the inferior passivation of boron doped surfaces with low bandgap amorphous silicon stems from a lower silicon-hydrogen bond energy due to this shift of the Fermi energy. Hydrogen effusion and ellipsometry measurements support our interpretation.

  15. Interaction between capillary flow and macroscopic silicon concentration in liquid siliconized carbon/carbon

    SciTech Connect

    Gern, F.H.

    1995-12-01

    This article describes a model for the numerical simulation of liquid silicon infiltration into porous carbon/carbon preforms. Macroscopic silicon concentration has been calculated from capillary flow equations. As a result, time dependence of silicon concentration during infiltration as well as silicon distribution in the ceramic end product can be calculated. Simulation values of silicon concentration after infiltration are in good accordance with experimental measurements.

  16. Does water dope carbon nanotubes?

    SciTech Connect

    Bell, Robert A.; Payne, Michael C.; Mostofi, Arash A.

    2014-10-28

    We calculate the long-range perturbation to the electronic charge density of carbon nanotubes (CNTs) as a result of the physisorption of a water molecule. We find that the dominant effect is a charge redistribution in the CNT due to polarisation caused by the dipole moment of the water molecule. The charge redistribution is found to occur over a length-scale greater than 30 Å, highlighting the need for large-scale simulations. By comparing our fully first-principles calculations to ones in which the perturbation due to a water molecule is treated using a classical electrostatic model, we estimate that the charge transfer between CNT and water is negligible (no more than 10{sup −4} e per water molecule). We therefore conclude that water does not significantly dope CNTs, a conclusion that is consistent with the poor alignment of the relevant energy levels of the water molecule and CNT. Previous calculations that suggest water n-dopes CNTs are likely due to the misinterpretation of Mulliken charge partitioning in small supercells.

  17. Transport properties of boron-doped single-walled silicon carbide nanotubes

    NASA Astrophysics Data System (ADS)

    Yang, Y. T.; Ding, R. X.; Song, J. X.

    2011-01-01

    The doped boron (B) atom in silicon carbide nanotube (SiCNT) can substitute carbon or silicon atom, forming two different structures. The transport properties of both B-doped SiCNT structures are investigated by the method combined non-equilibrium Green’s function with density functional theory (DFT). As the bias ranging from 0.8 to 1.0 V, the negative differential resistance (NDR) effect occurs, which is derived from the great difficulty for electrons tunneling from one electrode to another with the increasing of localization of molecular orbital. The high similar transport properties of both B-doped SiCNT indicate that boron is a suitable impurity for fabricating nano-scale SiCNT electronic devices.

  18. Dependence of resistivity on the doping level of polycrystalline silicon

    NASA Technical Reports Server (NTRS)

    Fripp, A. L.

    1975-01-01

    The electrical resistivity of polycrystalline silicon films has been studied as a function of doping concentration and heat treatment. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity of the as-deposited films was widely scattered but independent of dopant atom concentration at the lightly doped levels and was strong function of dopant level in the more heavily doped regions. Postdeposition heat treatments in an oxidizing atmosphere remove scatter in the data. The resultant resistivity for dopant levels less than 10 to the 16th atoms/per cu cm was approximately equal to that of intrinsic silicon. In the next 2 orders of magnitude increase in dopant level, the resistivity dropped 6 orders of magnitude. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

  19. Origins of conductivity improvement in fluoride-enhanced silicon doping of ZnO films.

    PubMed

    Rashidi, Nazanin; Vai, Alex T; Kuznetsov, Vladimir L; Dilworth, Jonathan R; Edwards, Peter P

    2015-06-01

    Fluoride in spray pyrolysis precursor solutions for silicon-doped zinc oxide (SiZO) transparent conductor thin films significantly improves their electrical conductivity by enhancing silicon doping efficiency and not, as previously assumed, by fluoride doping. Containing only earth-abundant elements, SiZO thus prepared rivals the best solution-processed indium-doped ZnO in performance. PMID:25879727

  20. Oxygen and carbon in silicon

    NASA Technical Reports Server (NTRS)

    Corbett, J. W.

    1985-01-01

    The properties of the early transistors were determined by the minority-carrier lifetime, as is the silicon photovoltaic solar cell. Most of the devices on the modern integrated circuits are majority carrier devices, in part to avoid this lifetime dependence. The micro-electronics industry typically starts with wafers with a minority-carrier lifetime of 1000 micro-seconds, but during device fabrication this lifetime is reduced to beflow 1 micro-second, in spite of extraordinary cleanliness and precautions. Process-induced defects (PID) include point defects, defect complexes, line defects, and bulk precipitates. One of the aspects that needs to be better understood is the nature of minority carrier recombination at line defects and at precipitates. Some of the PIDs are known to be related to the fast-diffusers of the iron-series transition elements. One of the common techniques of dealing with these elements is intrinsic gettering by the oxygen precipitates. But even in the gettered state, there may be a residual effect on the lifetime. Oxygen is an almost ubiquitous impurity in silicon and plays an important role in both integrated circuits and solar cells. The isolated oxygen interstitial is electrically inactive, but in its various aggregated forms it has a variety of electrical activities. The agglomeration and precipitation of oxygen, including impurity gettering and the complicating role of carbon, is discussed.

  1. Preparation of nitrogen-doped carbon tubes

    SciTech Connect

    Chung, Hoon Taek; Zelenay, Piotr

    2015-12-22

    A method for synthesizing nitrogen-doped carbon tubes involves preparing a solution of cyanamide and a suitable transition metal-containing salt in a solvent, evaporating the solvent to form a solid, and pyrolyzing the solid under an inert atmosphere under conditions suitable for the production of nitrogen-doped carbon tubes from the solid. Pyrolyzing for a shorter period of time followed by rapid cooling resulted in a tubes with a narrower average diameter.

  2. First solar cells on silicon wafers doped using sprayed boric acid

    NASA Astrophysics Data System (ADS)

    Silva, J. A.; Brito, Miguel C.; Costa, Ivo; Alves, Jorge Maia; Serra, João; Vallêra, António

    2010-11-01

    A new method for boron bulk doping of silicon ribbons is developed. The method is based on the spraying of the ribbons with a boric acid solution and is particularly suited for silicon ribbons that require a zone-melting recrystallization step. To analyse the quality of the material thus obtained, multicrystalline silicon samples doped with this doping process were used as substrate for solar cells and compared with solar cells made on commercial multicrystalline silicon wafers. The values obtained for the diffusion length and the IV curve parameters show that the method of doping with the boric acid solution is suitable to produce p-doped silicon ribbons for solar cell applications.

  3. Heavy doping effects in high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.

    1985-01-01

    The use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells was examined. The results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contact are presented. A reciprocity theorem is presented that relates the short circuit current of a device, induced by a carrier generation source, to the minority carrier Fermi level in the dark. A method for accurate measurement of minority-carrier diffusion coefficients in silicon is described.

  4. Terahertz emission from silicon nanostructures heavily doped with boron

    NASA Astrophysics Data System (ADS)

    Bagraev, Nikolay T.; Danilovskii, Eduard Yu; Gets, Dmitrii S.; Kaveev, Andrey K.; Klyachkin, Leonid E.; Kropotov, Grigorii I.; Kudryavtsev, Andrey A.; Kuzmin, Roman V.; Malyarenko, Anna M.; Mashkov, Vladimir A.; Tsibizov, Ivan A.; Tsypishka, Dmitrii I.; Vinerov, Ilya A.

    2014-03-01

    We present the first findings of the terahertz emission from the ultra-narrow p-type silicon quantum well confined by the δ-barriers heavily doped with boron on the n-type Si (100) surface. The THz spectra revealed by the voltage applied along the Si-QW plane appear to result from the radiation of the dipole boron centers.

  5. Size control of erbium-doped silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    John, John St.; Coffer, Jeffery L.; Chen, Yandong; Pinizzotto, Russell F.

    2000-09-01

    This work describes the effects of pyrolysis oven length and erbium precursor on the preparation of discrete erbium-doped silicon nanoparticles. These doped nanoparticles were prepared by the co-pyrolysis of disilane and the volatile complex Er(tmhd)3 (tmhd=2,2,6,6-tetramethyl-3,5-heptanedionato). The particle sizes and size distributions were determined using high resolution and conventional transmission electron microscopy. Erbium-doped silicon nanoparticles exhibit a selected area electron diffraction pattern consistent with the diamond cubic phase and a distinctive dark contrast in the transmission electron microscope. The presence of erbium is confirmed by x-ray energy dispersive spectroscopy. In general, the mean diameter of the individual nanoparticles increases as the length of the pyrolysis oven used during their preparation is increased.

  6. Accurate simulation of terahertz transmission through doped silicon junctions

    NASA Astrophysics Data System (ADS)

    Jen, Chih-Yu; Richter, Christiaan

    2015-03-01

    In the previous work we presented results demonstrating the ability of transmission mode terahertz time domain spectroscopy (THz-TDS) to detect doping profile differences and deviations in silicon. This capability is potentially useful for quality control in the semiconductor and photovoltaic industry. We shared subsequent experimental results revealing that terahertz interactions with both electrons and holes are strong enough to recognize both n- and p-type doping profile changes. We also displayed that the relatively long wavelength (~ 1 mm) of THz radiation allows this approach to be compatible with surface treatments like for instance the texturing (scattering layer) typically used in the solar industry. In this work we continuously demonstrate the accuracy with which current terahertz optical models can simulate the power spectrum of terahertz radiation transmitted through junctions with known doping profiles (as determined with SIMS). We conclude that current optical models predict the terahertz transmission and absorption in silicon junctions well.

  7. Heavy doping effects in high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  8. New doping method to obtain n-type silicon ribbons

    NASA Astrophysics Data System (ADS)

    Silva, J. A.; Platte, B.; Brito, M. C.; Serra, J. M.

    2015-10-01

    A method to dope silicon ribbons is presented. The method consists on the spraying of the ribbons with a phosphoric acid solution followed by a recrystallization in an optical heating furnace. During the sample heating, as phosphoric acid is dehydrated the resulting phosphorous compounds are either evaporated or serve as source for phosphorous diffusion. Phosphorous is efficiently incorporated in silicon by solid-state diffusion during heating and directly mixed in the melted silicon. Experimental results show significant incorporation gradients along the samples' length. The origin of the incorporation gradient is analysed, by testing the effect of experimental parameters such as the argon flux and the recrystallization velocity and direction. It is shown that samples recrystallized in a downward direction have homogeneous doping profiles over most of the length.

  9. Transport properties for carbon chain sandwiched between heteroatom-doped carbon nanotubes with different doping sites

    NASA Astrophysics Data System (ADS)

    Liu, Wenjiang; Deng, Xiaoqing; Cai, Shaohong

    2016-07-01

    The First-principles calculation is used to investigate the transport properties of a carbon chain connected with N-and/or B-doped caped carbon nanotube acting as electrodes. The I-V curves of the carbon chain are affected by the N/B doping sites, and rectifying behavior can be obtained distinctly when the carbon chain is just connected onto two doping atom sites (N- chain-B), and a weak rectification occurs when N (B) doping at other sites. Interestingly, the spin-filtering effects exist in the junction when it is doped at other sites, undoped system, or N-terminal carbon chains. However, no this behavior is found in N-chain-B and B-chain-B systems. The analysis on the transmission spectra, PDOS, LDOS, spin density, and the electron transmission pathways give an insight into the observed results for the system.

  10. Transport Measurements on Sb doped Silicon Nanowires

    NASA Astrophysics Data System (ADS)

    Nukala, Prathyusha; Zare, Marzieh; Sapkota, Gopal; Gali, Pradeep; Philipose, Usha

    2011-03-01

    Semiconductor nanowires (NWs) present an alternative approach for device scaling. N-type Si NWs are generally grown with silane as source with phosphine and arsenic as dopants, all of which are toxic in nature. We present a safe, cost-effective approach for synthesis of n- doped Si NWs using Sb. Structural and compositional characterization using electron microscopy and X-ray spectroscopy will be presented for crystallographic information on the quality and morphology. Ohmic contacts established to a single and on an array of doped and undoped NWs in an FET type of device configuration will provide information on several parameters such as type of majority carriers, mobility and concentration. We will highlight the promise of Sb doped Si NWs for electronic applications such as nano-scale field effect transistors and sensors.

  11. Polarization doping of graphene on silicon carbide

    NASA Astrophysics Data System (ADS)

    Mammadov, Samir; Ristein, Jürgen; Koch, Roland J.; Ostler, Markus; Raidel, Christian; Wanke, Martina; Vasiliauskas, Remigijus; Yakimova, Rositza; Seyller, Thomas

    2014-12-01

    The doping of quasi-freestanding graphene (QFG) on H-terminated, Si-face 6H-, 4H-, and 3C-SiC is studied by angle-resolved photoelectron spectroscopy close to the Dirac point. Using semi-insulating as well as n-type doped substrates we shed light on the contributions to the charge carrier density in QFG caused by (i) the spontaneous polarization of the substrate, and (ii) the band alignment between the substrate and the graphene layer. In this way we provide quantitative support for the previously suggested model of polarization doping of graphene on SiC (Ristein et al 2012 Phys. Rev. Lett. 108 246104).

  12. Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

    NASA Technical Reports Server (NTRS)

    Robertson, J. B.; Littlejohn, M. A.

    1974-01-01

    The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

  13. Electrical properties of phosphorus in situ doped Au-catalyst vapor liquid solid silicon nanowires

    NASA Astrophysics Data System (ADS)

    Pichon, L.; Rogel, R.; Jacques, E.

    2015-11-01

    N-type in-situ doped silicon nanowire-based resistors are fabricated following a CMOS process fabrication. Silicon nanowires are prepared by a Vapour Liquid Solid (VLS) method using gold as the catalyst. The doping level is adjusted by varying the phosphine to silane mole ratio during silicon nanowire growth. A macroscopic electrical model is presented to extract the average silicon nanowire electrical resistivity over a large doping level range (varying from undoped to highly doped nanowires). Carrier transport is strongly affected by the trapping effect of gold impurities into silicon nanowires, and silicon nanowire electrical resistivity is three decades higher than for silicon bulk at low doping levels. The technological requirement in terms of doping level control for the fabrication of devices based on a gold catalyst VLS is demonstrated.

  14. Ion-implantation doping of silicon carbide

    SciTech Connect

    Gardner, J.; Edwards, A.; Rao, M.V.; Papanicolaou, N.; Kelner, G.; Holland, O.W.

    1997-10-01

    Because of their commercial availability in bulk single crystal form, the 6H- and 4H- polytypes of SiC are gaining importance for high-power, high-temperature, and high-frequency device applications. Selective area doping is a crucial processing step in integrated circuit manufacturing. In Si technology, selective area doping is accomplished by thermal diffusion or ion-implantation. Because of the low diffusion coefficients of most impurities in SiC, ion implantation is indispensable in SiC device manufacturing. In this paper the authors present their results on donor, acceptor, and compensation implants in 6H-SiC.

  15. Laser doping and metallization of wide bandgap materials: silicon carbide, gallium nitride, and aluminum nitride

    NASA Astrophysics Data System (ADS)

    Salama, Islam Abdel Haleem

    A laser direct write and doping (LDWD) system is designed and utilized for direct metallization and selective area doping in different SiC polytypes, GaN and in dielectrics including AlN. Laser direct metallization in 4H- and 6H-SiC generates metal-like conductive phases that are produced as both rectifying and ohmic contacts without metal deposition. Nd:YAG (lambda = 532, 1064 nm) nanosecond pulsed laser irradiation in SiC induces carbon-rich conductive phases by thermal decomposition of SiC while UV excimer (lambda = 193 nm) laser irradiation produces a silicon-rich phase due to selective carbon photoablation. Linear transmission line method (TLM) pattern is directly fabricated in single crystals SiC by pulsed laser irradiation allowing characterization of the laser fabricated metal-like contacts. Activation of a self focusing effect at the frequency doubled Nd:YAG laser irradiation (lambda = 532 nm) allows to fabricate buried metal like contacts in SiC wafers while maintaining their device-ready surface condition. Gas immersion laser doping (GILD) and laser doping from a molten precursor are utilized to dope both GaN and SiC. Trimethylaluminum (TMAl) and nitrogen are the precursors used to produce p-type and n-type doped SiC; respectively. Nd:YAG and excimer laser nitrogen doping in SiC epilayer and single crystal substrates increases the dopant concentration by two orders of magnitude and produces both deep (500--600 nm) and shallow (50 nm) junctions, respectively. Laser assisted effusion/diffusion is introduced and utilized to dope Al in SiC wafers. Using this technique, a150 nm p-type doped junction is fabricated in semi-insulating 6H- and n-type doped 4H-SiC wafers. Laser-induced p-type doping of Mg in single crystal GaN is conducted using Bis-magnesium dihydrate [Mg(TMHD)2]. Mg concentration and penetration depth up to 10 20--1021 cm-3 and 5mum, respectively are achieved using various laser doping techniques. Laser direct writing and doping (LDWD) is a

  16. Intramolecular σ-bond metathesis between carbon-carbon and silicon-silicon bonds.

    PubMed

    Ishida, Naoki; Ikemoto, Wataru; Murakami, Masahiro

    2012-06-15

    An intramolecular σ-bond metathesis between carbon-carbon and silicon-silicon bonds took place on treatment of a disilane tethered to a cyclobutanone with a palladium(0) catalyst, furnishing a silaindane skeleton as well as an acylsilane functionality at once. PMID:22651103

  17. Determination of surface recombination velocity in heavily doped silicon

    NASA Technical Reports Server (NTRS)

    Watanabe, M.; Gatos, H. C.; Actor, G.

    1976-01-01

    A method was developed and successfully tested for the determination of the effective surface recombination velocity of silicon layers doped by diffusion of phosphorus to a level of 10 to the 19th to 10 to the 21st per cu cm. The effective recombination velocity was obtained from the dependence of the electron-beam-induced current on the penetration of the electron beam of a scanning electron microscope. A special silicon diode was constructed which permitted the collection at the p-n junction of the carriers excited by the electron beam. This diode also permitted the study of the effects of surface preparation on the effective surface recombination velocity.

  18. Integration of a carbon nanotube based electrode in silicon microtechnology to fabricate electrochemical transducers

    NASA Astrophysics Data System (ADS)

    Luais, E.; Boujtita, M.; Gohier, A.; Tailleur, A.; Casimirius, S.; Djouadi, M. A.; Granier, A.; Tessier, P. Y.

    2008-10-01

    An original approach was developed and validated for the fabrication of a carbon nanotube (CNT) electrode synthesized directly onto a carbon buffer thin film deposited on a highly doped monocrystalline silicon surface. The buffer layer of amorphous carbon thin film was deposited by physical vapour deposition on the silicon substrate before CNT synthesis. For this purpose, nickel was deposited on the carbon buffer layer by an electrochemical procedure and used as a catalyst for the CNT growth. The CNT synthesis was achieved by plasma enhanced chemical vapour deposition (PECVD) in an electron cyclotron resonance (ECR) plasma chamber using a C2H2/NH3 gas mixture. In order to evaluate the electrochemical behaviour of the CNT-based electrode, the carbon layer and the silicon/carbon interface were studied. The resulting buffer layer enhanced the electronic transport from the doped silicon to the CNTs. The electrode surface was studied by XPS and characterized by both SEM and TEM. The electrochemical response exhibited by the resulting electrodes modified with CNTs was also examined by cyclic voltammetry. The whole process was found to be compatible with silicon microtechnology and could be envisaged for the direct integration of microsensors on silicon chips.

  19. Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

    SciTech Connect

    Lauer, Kevin Möller, Christian; Schulze, Dirk; Ahrens, Carsten

    2015-01-15

    Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

  20. ESR in CVD silicon and silicon-carbon alloys

    NASA Astrophysics Data System (ADS)

    Gaczi, P. J.; Booth, D. C.

    1981-03-01

    Electron spin resonance (ESR) is reported in three groups of chemical vapor deposited silicon films. It is noted that group I films are amorphous Si(x)C(100-x) alloys prepared from silane and acetylene at a substrate temperature of 630 C that have a spin density of 3 x 10 to the 19th/cu cm. The silicon-carbon films have been developed as structurally stable selective absorbers for photothermal solar energy conversion. Group II films are nonalloyed amorphous silicon films prepared below 660 C that have a spin density of 1 x 10 to the 19th, while group III films are polycrystalline films prepared above 670 C with a density of 0.5 x 10 to the 19th/cu cm. The exchange interaction between spins is sufficiently strong in the group I silicon-carbon alloys so that an average g value is observed and no evidence of superposition is found in agreement with the amorphous Si-Ge results of Kumeda et al. (1977). ESR saturation and line broadening as a function of microwave power in samples representative of the three groups is observed. A trend, in the order group III, II, I, is found of increasing spin system homogeneity, indicating that the exchange coupled spin clusters contain increasing numbers of spins.

  1. Superlattice-doped silicon detectors: progress and prospects

    NASA Astrophysics Data System (ADS)

    Hoenk, Michael E.; Nikzad, Shouleh; Carver, Alexander G.; Jones, Todd J.; Hennessy, John; Jewell, April D.; Sgro, Joseph; Tsur, Shraga; McClish, Mickel; Farrell, Richard

    2014-07-01

    In this paper we review the physics and performance of silicon detectors passivated with wafer-scale molecular beam epitaxy (MBE) and atomic layer deposition (ALD). MBE growth of a two-dimensional (2D) doping superlattice on backside-illuminated (BSI) detectors provides nearly perfect protection from interface traps, even at trap densities in excess of 1014 cm-2. Superlattice-doped, BSI CMOS imaging detectors show no measurable degradation of quantum efficiency or dark current from long-term exposure to pulsed DUV lasers. Wafer-scale superlattice-doping has been used to passivate CMOS and CCD imaging arrays, fully-depleted CCDs and photodiodes, and large-area avalanche photodiodes. Superlattice-doped CCDs with ALD-grown antireflection coatings achieved world record quantum efficiency at deep and far ultraviolet wavelengths (100-300nm). Recently we have demonstrated solar-blind, superlattice doped avalanche photodiodes using integrated metal-dielectric coatings to achieve selective detection of ultraviolet light in the 200-250 nm spectral range with high out-of-band rejection.

  2. Structural and electrical properties of trimethylboron-doped silicon nanowires

    NASA Astrophysics Data System (ADS)

    Lew, Kok-Keong; Pan, Ling; Bogart, Timothy E.; Dilts, Sarah M.; Dickey, Elizabeth C.; Redwing, Joan M.; Wang, Yanfeng; Cabassi, Marco; Mayer, Theresa S.; Novak, Steven W.

    2004-10-01

    Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B2H6) sources. Boron concentrations ranging from 1×1018 to 4×1019cm-3 were obtained by varying the inlet dopant/SiH4 gas ratio. TEM characterization revealed that the B2H6-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. The difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B2H6. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.

  3. Carbon Nanotube Doped Lithium Ion Batteries

    NASA Astrophysics Data System (ADS)

    Raffaelle, Ryne P.; Difelice, Ron; van Derveer, William R.; Gennett, Tom; Maranchi, Jeff; Kumta, Prashant; Hepp, Aloysius F.

    2002-03-01

    We have characterized thin film lithium ion batteries that contain high purity single wall carbon nanotube-doped polymer anodes. Highly purified single-walled carbon nanotubes (SWCNT) were obtained through chemical refinement of soot generated by pulsed laser ablation. The purity of the nanotubes was determined via thermogravimetric analysis, two wavelength Raman spectroscopy, spectrophotometry, scanning electron microscopy and transmission electron microscopy. The specific surface area and lithium capacity of the SWCNT was compared to that of other conventional anode materials (i.e., carbon black, graphite, and multi-walled carbon nanotubes). The SWCNT exhibited a specific surface area that greatly exceeded the other carbonaceous materials. Anodes were prepared by casting thin films directly onto copper foil of several ionically conductive polymers (i.e., PAN, PVDF, PEO) doped with the SWCNT. The lithium-ion capacity of the materials was measured using a standard 3-electrode cell. The electrochemical discharge capacity of the purified single walled carbon nanotubes in PVDF was in excess of 1300 mAh/g after 30 charge/discharge cycles when tested using a current density of 20µA/cm^2. The SWCNT anodes were incorporated into all-polymer thin film batteries containing LiNiCoO_2-doped polymer cathodes. Cycling results on the various SWCNT polymer combinations will be presented.

  4. Multifunctional electroactive heteroatom-doped carbon aerogels.

    PubMed

    You, Bo; Yin, Peiqun; An, Linna

    2014-11-12

    The design and synthesis of highly active, durable, and cheap nanomaterials for various renewable energy storage and conversion applications is extremely desirable but remains challenging. Here, a green and efficient strategy to produce CoOx nanoparticles and surface N-co-doped carbon aerogels (Co-N-CAs) is reported by multicomponent surface self-assembly of commercially melamine sponge (CMS). In the methodology, the CMS simultaneously function as green N precursor for surface N doping and 3D support. The resulting Co-N-CAs exhibit 3D hierarchical, interconnected macro- and bimodal meso-porosity (6.3 nm and <4 nm), high surface area (1383 m(2) g(-1)), and highly dispersed, semi-exposured CoOx nanoparticles (diameter of 12.5 nm). The surface doping of N, semi-exposured configuration of CoOx nanoparticles and the penetrated complementary pores (<4 nm) in the carbon walls provide highly accessibility between electroactive components and electrolytes to improve reactivity. With their tailored architecture, the Co-N-CAs show superior electrocatalytic oxygen reduction (ORR) activities comparable to the commercially Pt/C catalysts, high specific capacitance (433 F g(-1)), excellent lithium storage (938 mAh g(-1)), and outstanding durability, making them very promising for advanced energy conversion and storage. In addition, the presented strategy can be extended to fabricate other metal oxide- and N-co-doped carbon aerogels for diverse energy-related applications. PMID:25044991

  5. Investigations on silicon/amorphous-carbon and silicon/nanocrystalline palladium/ amorphous-carbon interfaces.

    PubMed

    Roy, M; Sengupta, P; Tyagi, A K; Kale, G B

    2008-08-01

    Our previous work revealed that significant enhancement in sp3-carbon content of amorphous carbon films could be achieved when grown on nanocrystalline palladium interlayer as compared to those grown on bare silicon substrates. To find out why, the nature of interface formed in both the cases has been investigated using Electron Probe Micro Analysis (EPMA) technique. It has been found that a reactive interface in the form of silicon carbide and/silicon oxy-carbide is formed at the interface of silicon/amorphous-carbon films, while palladium remains primarily in its native form at the interface of nanocrystalline palladium/amorphous-carbon films. However, there can be traces of dissolved oxygen within the metallic layer as well. The study has been corroborated further from X-ray photoelectron spectroscopic studies. PMID:19049221

  6. Effects of high doping levels on silicon solar cell performance

    NASA Technical Reports Server (NTRS)

    Godlewski, M. P.; Brandhorst, H. W., Jr.; Baraona, C. R.

    1975-01-01

    Open-circuit voltages measured in silicon solar cells made from 0.01 ohm-cm material are 150 mV lower than voltages calculated from simple diffusion theory and cannot be explained by poor diffusion lengths or surface leakage currents. An analytical study was made to determine whether high doping effects, which increase the intrinsic carrier concentration, could account for the low observed voltages and to determine the limits on voltage and efficiency imposed by high doping effects. The results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AMO) and a voltage of 0.7 volts were calculated for 0.1 ohm-cm cells assuming an optimum diffused layer impurity profile.

  7. A DLTS study of hydrogen doped czochralski-grown silicon

    NASA Astrophysics Data System (ADS)

    Jelinek, M.; Laven, J. G.; Kirnstoetter, S.; Schustereder, W.; Schulze, H.-J.; Rommel, M.; Frey, L.

    2015-12-01

    In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10-15 μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.

  8. Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

    NASA Astrophysics Data System (ADS)

    Guan, Bin; Siampour, Hamidreza; Fan, Zhao; Wang, Shun; Kong, Xiang Yang; Mesli, Abdelmadjid; Zhang, Jian; Dan, Yaping

    2015-07-01

    This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10-15 cm2 s-1, 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value.

  9. Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

    PubMed Central

    Guan, Bin; Siampour, Hamidreza; Fan, Zhao; Wang, Shun; Kong, Xiang Yang; Mesli, Abdelmadjid; Zhang, Jian; Dan, Yaping

    2015-01-01

    This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10−15 cm2 s−1, 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value. PMID:26227342

  10. Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers.

    PubMed

    Guan, Bin; Siampour, Hamidreza; Fan, Zhao; Wang, Shun; Kong, Xiang Yang; Mesli, Abdelmadjid; Zhang, Jian; Dan, Yaping

    2015-01-01

    This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10(-15) cm(2) s(-1), 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value. PMID:26227342

  11. Polarization behavior of paints doped with silicone light diffusion agent

    NASA Astrophysics Data System (ADS)

    Wang, Fei; Xie, Wei; Guo, Honggui; Wu, Jianye

    2016-02-01

    We report on the polarization behavior of painted samples doped with a silicone light diffusion agent and illuminated by linearly polarized laser light centered at 532 and 650 nm. Reflection spectra of the painted samples with dopant concentration of 0 and 12.2 wt.% were examined. The degree of depolarization increases from 0.35 to 0.8 under laser illumination at 650 nm and from 0.5 to 0.94 under laser illumination at 532 nm with an increasing concentration of light diffusion agent. The polarization behavior of painted samples was described, taking into account contribution of both surface scattering and volume scattering.

  12. Effects of high doping levels silicon solar cell performance

    NASA Technical Reports Server (NTRS)

    Godlewski, M. P.; Brandhorst, H. W., Jr.; Baraona, C. R.

    1975-01-01

    The significance of the heavy doping effects (HDE) on the open-circuit voltage of silicon solar cells is assessed. Voltage calculations based on diffusion theory are modified to include the first order features of the HDE. Comparisions of the open-circuit voltage measured for cells of various base resistivities are made with those calculated using the diffusion model with and without the HDE. Results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AM0) and a voltage of 0.7 volts are calculated for 0.1 omega-cm cells assuming an optimum diffused layer impurity profile.

  13. Waveguide lasers in ytterbium-doped tantalum pentoxide on silicon.

    PubMed

    Aghajani, A; Murugan, G S; Sessions, N P; Apostolopoulos, V; Wilkinson, J S

    2015-06-01

    A waveguide laser in an ytterbium-doped tantalum pentoxide film is reported. The waveguide is formed of a rib of sputtered tantalum pentoxide on top of oxidized silicon with an over-cladding of silica. Emission at a wavelength of 1025 nm was achieved with an absorbed pump power threshold and slope efficiency of ≈29  mW and 27%, respectively, for a cavity formed by a high reflector mirror and an estimated 12% Fresnel reflection from the bare end-face at the output. PMID:26030554

  14. Strength characterization of yttria/alumina-doped sintered silicon nitride

    NASA Technical Reports Server (NTRS)

    Govila, R. K.

    1987-01-01

    The flexural strength of yttria/alumina-doped sintered silicon nitride (Ford Material-RM 20) was measured as a function of temperature (20 to 1400 deg C), applied stress and time. Flexural stress rupture testing at 800 and 1000 deg C indicated that the material can sustain 344 MPa and 276 MPa, respectively, without failure, for a limited time (less than or equal to 100 h). The RM 20 material was susceptible to both oxidation and early stages of creep deformation at temperatures above 1000 deg C and displayed extensive creep deformation and degradation in strength above 1300 deg C.

  15. Chemical mechanical polishing of boron-doped polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    Pirayesh, Hamidreza; Cadien, Kenneth

    2014-03-01

    Chemical mechanical polishing (CMP) is a technique which helps to print a smaller depth of focus and smoother surface in micro fabrication industry. In this project, boron doped polysilicon is used as a fill material for Through Silicon Vias (TSV) creating a 3D package. It is shown that the presence of boron as dopant suppresses the polysilicon polish rate. To increase the polish rate, understanding the mechanism of polish rate retardation is essential. We believe that the electrical effects play the major role in this phenomenon and by reducing this effect we are able to increase the polish rate.

  16. The observation of damage regions produced by neutron irradiation in lithium-doped silicon solar cells.

    NASA Technical Reports Server (NTRS)

    Ghosh, S.; Sargent, G. A.

    1972-01-01

    Study regions of lattice disorder produced in lithium-doped float-zone melted n/p-type silicon solar cells by irradiation with monoenergetic neutrons at doses between 10 to the 10th and 10 to the 13th per cu cm. The defect regions were revealed by chemically etching the surface of the solar cells and by observing carbon replicas in an electron microscope. It was found that the defect density increased with increasing irradiation dose and increased lithium content, whereas the average defect diameter was found to decrease. From thermal annealing experiments it was found that in the lithium-doped material the defect structure was stable at temperatures between 300 and 1200 K. This was found to be in contrast to the undoped material where at the lowest doses considerable annealing was observed to occur. These results are discussed in terms of the theoretical predictions and models of defect clusters proposed by Gossick (1959) and Crawford and Cleland (1959).

  17. Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

    2014-01-01

    Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

  18. Self detachment of free-standing porous silicon membranes in moderately doped n-type silicon

    NASA Astrophysics Data System (ADS)

    Kumar, Neeraj; Gennaro, Salvatore; Sasikumar, Pradeep Vallachira Warriam; Sorarù, Gian Domenico; Bettotti, Paolo

    2014-07-01

    In this article we describe a reliable etching method to fabricate porous silicon free-standing membranes (FSMs) based on a self detachment of the porous layer in moderately doped n-type silicon substrates. We found that stable growth of smooth and straight pores is restricted to a narrow range of etching conditions and, unlike p-type substrates, the lift-off of the membrane is a self-limited process that does not require a large burst of current. The detachment of the porous membrane is independent of the structure of the already porosified layer, meaning that the average pore diameter can be tuned from nano to macro size within the same membrane. We also demonstrate that, despite their limited thickness, FSMs are quite robust and can sustained further processing. Thus, the etching receipt we are proposing here extends the range of sensors and filters that can be fabricated using porous silicon technology.

  19. Oxygen and carbon impurities and related defects in silicon

    NASA Technical Reports Server (NTRS)

    Pearce, C. W.

    1985-01-01

    Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented.

  20. Individualized p-Doped Carbon Nanohorns.

    PubMed

    Stergiou, Anastasios; Liu, Zheng; Xu, Bin; Kaneko, Toshiro; Ewels, Christopher P; Suenaga, Kazu; Zhang, Minfang; Yudasaka, Masako; Tagmatarchis, Nikos

    2016-08-22

    A facile approach to individualize spherically aggregated pristine carbon nanohorns (pr-CNHs) was established. Specifically, we found that treatment of pr-CNHs with chlorosulfonic acid generates positively charged polarized species, which disintegrate toward individualized carbon nanohorns (in-CNHs). Interestingly, the isolated in-CNHs were revealed to be p-doped owing to the adsorption of chlorosulfonate units. The findings were confirmed by data derived from high-resolution transmission electron microscopy imaging, Raman and ultraviolet photoemission spectroscopy, and additionally supported by theoretical calculations and thermogravimetry. PMID:27444516

  1. Carbon-doped SiO(x) nanowires with a large yield of white emission.

    PubMed

    Fabbri, Filippo; Rossi, Francesca; Negri, Marco; Tatti, Roberta; Aversa, Lucrezia; Dhanabalan, Sathish Chander; Verucchi, Roberto; Attolini, Giovanni; Salviati, Giancarlo

    2014-05-01

    The growth of SiOx nanowires (NWs) with intense white emission is reported. Due to carbon monoxide gas being used as a dopant precursor, carbon-doped under-stoichiometric silicon dioxide NWs are obtained. The doping of the NWs is studied by means of x-ray photoelectron spectroscopy, which allows to assess the presence of carbon atoms in the silicon oxide amorphous structure. The light emission properties are studied by means of cathodoluminescence spectroscopy, which shows three main emission bands set at 2.7 eV (blue), 2.3 eV (green) and 1.9 eV (red), resulting in the white emission. PMID:24736107

  2. Carbon/Silicon Heterojunction Solar Cells: State of the Art and Prospects.

    PubMed

    Li, Xinming; Lv, Zheng; Zhu, Hongwei

    2015-11-01

    In the last few decades, advances and breakthroughs of carbon materials have been witnessed in both scientific fundamentals and potential applications. The combination of carbon materials with traditional silicon semiconductors to fabricate solar cells has been a promising field of carbon science. The power conversion efficiency has reached 15-17% with an astonishing speed, and the diversity of systems stimulates interest in further research. Here, the historical development and state-of-the-art carbon/silicon heterojunction solar cells are covered. Firstly, the basic concept and mechanism of carbon/silicon solar cells are introduced with a specific focus on solar cells assembled with carbon nanotubes and graphene due to their unique structures and properties. Then, several key technologies with special electrical and optical designs are introduced to improve the cell performance, such as chemical doping, interface passivation, anti-reflection coatings, and textured surfaces. Finally, potential pathways and opportunities based on the carbon/silicon heterojunction are envisaged. The aspects discussed here may enable researchers to better understand the photovoltaic effect of carbon/silicon heterojunctions and to optimize the design of graphene-based photodevices for a wide range of applications. PMID:26422457

  3. Near-infrared free carrier absorption in heavily doped silicon

    SciTech Connect

    Baker-Finch, Simeon C.; McIntosh, Keith R.; Yan, Di; Fong, Kean Chern; Kho, Teng C.

    2014-08-14

    Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10{sup 18} and 3 × 10{sup 20} cm{sup −3}. Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis.

  4. Properties of boron-doped thin films of polycrystalline silicon

    SciTech Connect

    Merabet, Souad

    2013-12-16

    The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×10{sup 20}cm{sup −3} has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO{sub 2} deposited at temperatures T{sub d} ranged between 520°C and 605°C and thermally-oxidized in dry oxygen ambient at 945°C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence <ρ{sub 200nm/c−Si}> < <ρ{sub 200nm/SiO2}> and <ρ{sub 520}> < <ρ{sub 605}>. The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO{sub 2}) are clearly different.

  5. Crystallization and doping of amorphous silicon on low temperature plastic

    DOEpatents

    Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

    1994-09-13

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

  6. Crystallization and doping of amorphous silicon on low temperature plastic

    DOEpatents

    Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

    1994-01-01

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

  7. Hybrid integration of carbon nanotubes into silicon slot photonic structures

    NASA Astrophysics Data System (ADS)

    Durán Valdeiglesias, E.; Zhang, W.; Hoang, H. C.; Alonso-Ramos, C.; Noury, A.; Serna, S.; Le Roux, X.; Cassan, E.; Izard, N.; Sarti, F.; Torrini, U.; Balestrieri, M.; Keita, A.-S.; Yang, H.; Bezugly, V.; Vinattieri, A.; Cuniberti, G.; Filoramo, A.; Gurioli, M.; Vivien, L.

    2016-03-01

    Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects. However, current Si photonics require on-chip integration of several materials, including III-V for lasing, doped silicon for modulation and Ge for detection. The very different requirements of these materials result in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. We are developing an alternative route towards the integration of optoelectronic devices in Si photonic, relying on the use of single wall carbon nanotubes (SWNTs). SWNTs can be considered as a Si compatible material able to emit, modulate and detect near-infrared light. Hence, they hold a unique potential to implement all active devices in the Si photonics platform. In addition, solution processed SWNTs can be integrated on Si using spin-coating techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform.

  8. Converting a carbon preform object to a silicon carbide object

    NASA Technical Reports Server (NTRS)

    Levin, Harry (Inventor)

    1990-01-01

    A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed. A carbon or graphite preform object placed in the reaction chamber is contacted with the silicon. The carbon or graphite preform object is recovered from the reactor chamber after it has been converted to a desired silicon carbide, silicon and carbon composition.

  9. Silicon/Carbon Nanotube Photocathode for Splitting Water

    NASA Technical Reports Server (NTRS)

    Amashukeli, Xenia; Manohara, Harish; Greer, Harold F.; Hall, Lee J.; Gray, Harry B.; Subbert, Bryan

    2013-01-01

    A proof-of-concept device is being developed for hydrogen gas production based on water-splitting redox reactions facilitated by cobalt tetra-aryl porphyrins (Co[TArP]) catalysts stacked on carbon nanotubes (CNTs) that are grown on n-doped silicon substrates. The operational principle of the proposed device is based on conversion of photoelectron energy from sunlight into chemical energy, which at a later point, can be turned into electrical and mechanical power. The proposed device will consist of a degenerately n-doped silicon substrate with Si posts covering the surface of a 4-in. (approximately equal to 10cm) wafer. The substrate will absorb radiation, and electrons will move radially out of Si to CNT. Si posts are designed such that the diameters are small enough to allow considerable numbers of electrons to transport across to the CNT layer. CNTs will be grown on top of Si using conformal catalyst (Fe/Ni) deposition over a thin alumina barrier layer. Both metallic and semiconducting CNT will be used in this investigation, thus allowing for additional charge generation from CNT in the IR region. Si post top surfaces will be masked from catalyst deposition so as to prevent CNT growth on the top surface. A typical unit cell will then consist of a Si post covered with CNT, providing enhanced surface area for the catalyst. The device will then be dipped into a solution of Co[TArP] to enable coating of CNT with Co(P). The Si/CNT/Co [TArP] assembly then will provide electrons for water splitting and hydrogen gas production. A potential of 1.23 V is needed to split water, and near ideal band gap is approximately 1.4 eV. The combination of doped Si/CNT/Co [TArP] will enable this redox reaction to be more efficient.

  10. Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

    SciTech Connect

    Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M.

    2013-05-27

    Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

  11. Carbon Cryogel Silicon Composite Anode Materials for Lithium Ion Batteries

    NASA Technical Reports Server (NTRS)

    Woodworth James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 10 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-4,9 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  12. Dynamics of iron-acceptor-pair formation in co-doped silicon

    SciTech Connect

    Bartel, T.; Gibaja, F.; Graf, O.; Gross, D.; Kaes, M.; Heuer, M.; Kirscht, F.; Möller, C.; Lauer, K.

    2013-11-11

    The pairing dynamics of interstitial iron and dopants in silicon co-doped with phosphorous and several acceptor types are presented. The classical picture of iron-acceptor pairing dynamics is expanded to include the thermalization of iron between different dopants. The thermalization is quantitatively described using Boltzmann statistics and different iron-acceptor binding energies. The proper understanding of the pairing dynamics of iron in co-doped silicon will provide additional information on the electronic properties of iron-acceptor pairs and may become an analytical method to quantify and differentiate acceptors in co-doped silicon.

  13. Investigation of the properties of carbon-base nanostructures doped YBa2Cu3O7-δ high temperature superconductor

    NASA Astrophysics Data System (ADS)

    Dadras, Sedigheh; Ghavamipour, Mahshid

    2016-03-01

    In this research, we have investigated the effects of three samples of carbon-base nanostructures (carbon nanoparticles, carbon nanotubes and silicon carbide nanoparticles) doping on the properties of Y1Ba2Cu3O7-δ (YBCO) high temperature superconductor. The pure and doped YBCO samples were synthesized by sol-gel method and characterized by resistivity versus temperature (ρ-T), current versus voltage (I-V), through X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis. The results confirmed that for all the samples, the orthorhombic phase of YBCO compound is formed. We found that the pinning energy and critical current density of samples increase by adding carbon nanostructures to YBCO compound. Also critical temperature is improved by adding carbon nanotubes to YBCO compound, while it does not change much for carbon and silicon carbide nanoparticles doped compounds. Furthermore, the samples were characterized by UV-vis spectroscopy in 300 K and the band gap of the samples was determined. We found that the carbon nanotubes doping decreases YBCO band gap in normal state from 1.90 eV to 1.68 eV, while carbon and SiC nanoparticles doping increases it to 2.20 and 3.37 eV respectively.

  14. Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

    NASA Technical Reports Server (NTRS)

    Singh, M.; Behrendt, D. R.

    1992-01-01

    Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

  15. Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

    SciTech Connect

    Singh, M.; Behrendt, D.R.

    1992-09-01

    Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the reaction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

  16. Ferromagnetic states of p-type silicon doped with Mn

    NASA Astrophysics Data System (ADS)

    Yunusov, Z. A.; Yuldashev, Sh. U.; Igamberdiev, Kh. T.; Kwon, Y. H.; Kang, T. W.; Bakhadyrkhanov, M. K.; Isamov, S. B.; Zikrillaev, N. F.

    2014-05-01

    In this work, the ferromagnetic states of Mn-doped p-type silicon samples were investigated. Two different types of ferromagnetic states have been observed in Si (Mn, B). The samples with a relatively high concentration of Mn revealed a ferromagnetic state with a Curie temperature above room temperature, and that ferromagnetism was due to the Mn x B y ferromagnetic clusters. The samples with a moderate concentration of Mn at low temperatures revealed a ferromagnetic state that was mediated by carriers (holes). The samples demonstrated the anomalous Hall effect at temperatures below 100 K and had a negative magneto-resistivity peak at a temperature close to the Curie temperature. The thermal diffusivity measurements demonstrated the existence of a second-order phase transition in the samples with a moderate Mn concentration. The specific heat's critical exponent α = 0.5, determined from the thermal diffusivity measurements, confirmed the long-range nature of the magnetic exchange interaction in these samples.

  17. High-temperature diffusion doping of porous silicon carbide

    NASA Astrophysics Data System (ADS)

    Mynbaeva, M. G.; Mokhov, E. N.; Lavrent'ev, A. A.; Mynbaev, K. D.

    2008-09-01

    The results of experiments on high-temperature (2000-2200°C) diffusion doping of porous silicon carbide (PSC) by vanadium and erbium are reported. It is established that the specific features of diffusion processes in PSC at these temperatures are determined by modification of the porous structure due to the transport of vacancies. Based on a comparison of these results to available data on the low-temperature (900-1000°C) diffusion, it is concluded that the mechanisms of diffusion in PSC at low and high temperatures are different and that SiC with a porous structure is an effective medium particularly for low-temperature diffusion.

  18. Boron-Doped Silicon Diatom Frustules as a Photocathode for Water Splitting.

    PubMed

    Chandrasekaran, Soundarrajan; Macdonald, Thomas J; Gerson, Andrea R; Nann, Thomas; Voelcker, Nicolas H

    2015-08-12

    An effective solar-powered silicon device for hydrogen production from water splitting is a priority in light of diminishing fossil fuel vectors. There is increasing demand for nanostructuring in silicon to improve its antireflective properties for efficient solar energy conversion. Diatom frustules are naturally occurring biosilica nanostructures formed by biomineralizing microalgae. Here, we demonstrate magnesiothermic conversion of boron-doped silica diatom frustules from Aulacoseira sp. into nanostructured silicon with retention of the original shape. Hydrogen production was achieved for boron-doped silicon diatom frustules coated with indium phosphide nanocrystal layers and an iron sulfur carbonyl electrocatalyst. PMID:26192101

  19. Control of carbon balance in a silicon smelting furnace

    DOEpatents

    Dosaj, V.D.; Haines, C.M.; May, J.B.; Oleson, J.D.

    1992-12-29

    The present invention is a process for the carbothermic reduction of silicon dioxide to form elemental silicon. Carbon balance of the process is assessed by measuring the amount of carbon monoxide evolved in offgas exiting the furnace. A ratio of the amount of carbon monoxide evolved and the amount of silicon dioxide added to the furnace is determined. Based on this ratio, the carbon balance of the furnace can be determined and carbon feed can be adjusted to maintain the furnace in carbon balance.

  20. Carbon nanotube-amorphous silicon hybrid solar cell with improved conversion efficiency.

    PubMed

    Funde, Adinath M; Nasibulin, Albert G; Syed, Hashmi Gufran; Anisimov, Anton S; Tsapenko, Alexey; Lund, Peter; Santos, J D; Torres, I; Gandía, J J; Cárabe, J; Rozenberg, A D; Levitsky, Igor A

    2016-05-01

    We report a hybrid solar cell based on single walled carbon nanotubes (SWNTs) interfaced with amorphous silicon (a-Si). The high quality carbon nanotube network was dry transferred onto intrinsic a-Si forming Schottky junction for metallic SWNT bundles and heterojunctions for semiconducting SWNT bundles. The nanotube chemical doping and a-Si surface treatment minimized the hysteresis effect in current-voltage characteristics allowing an increase in the conversion efficiency to 1.5% under an air mass 1.5 solar spectrum simulator. We demonstrated that the thin SWNT film is able to replace a simultaneously p-doped a-Si layer and transparent conductive electrode in conventional amorphous silicon thin film photovoltaics. PMID:27005494

  1. Carbon nanotube-amorphous silicon hybrid solar cell with improved conversion efficiency

    NASA Astrophysics Data System (ADS)

    Funde, Adinath M.; Nasibulin, Albert G.; Gufran Syed, Hashmi; Anisimov, Anton S.; Tsapenko, Alexey; Lund, Peter; Santos, J. D.; Torres, I.; Gandía, J. J.; Cárabe, J.; Rozenberg, A. D.; Levitsky, Igor A.

    2016-05-01

    We report a hybrid solar cell based on single walled carbon nanotubes (SWNTs) interfaced with amorphous silicon (a-Si). The high quality carbon nanotube network was dry transferred onto intrinsic a-Si forming Schottky junction for metallic SWNT bundles and heterojunctions for semiconducting SWNT bundles. The nanotube chemical doping and a-Si surface treatment minimized the hysteresis effect in current-voltage characteristics allowing an increase in the conversion efficiency to 1.5% under an air mass 1.5 solar spectrum simulator. We demonstrated that the thin SWNT film is able to replace a simultaneously p-doped a-Si layer and transparent conductive electrode in conventional amorphous silicon thin film photovoltaics.

  2. Impact of isovalent doping on radiation defects in silicon

    NASA Astrophysics Data System (ADS)

    Londos, C. A.; Sgourou, E. N.; Timerkaeva, D.; Chroneos, A.; Pochet, P.; Emtsev, V. V.

    2013-09-01

    Isovalent doping is an important process for the control of point defects in Si. Here, by means of infrared spectroscopy, we investigated the properties of the two main radiation-induced defects in Czochralski-Si (Cz-Si) the oxygen-vacancy (VO) and the carbon-oxygen (CiOi) centres. In particular, we investigated the effect of isovalent doping on the production, the thermal evolution, and the thermal stability of the VO and the CiOi defects. Additionally, we studied the reactions that participate upon annealing and the defects formed as a result of these reactions. Upon annealing VO is converted to VO2 defect although part of the CiOi is converted to CsO2i complexes. Thus, we studied the conversion ratios [VO2]/[VO] and [CsO2i]/[CiOi] with respect to the isovalent dopant. Additionally, the role of carbon in the above processes was discussed. A delay between the temperature characterizing the onset of the VO decay and the temperature characterizing the VO2 growth as well the further growth of VO2 after the complete disappearance of VO indicate that the VO to VO2 conversion is a complex phenomenon with many reaction processes involved. Differences exhibited between the effects of the various dopants on the properties of the two defects were highlighted. The results are discussed in view of density functional theory calculations involving the interaction of isovalent dopants with intrinsic defects, the oxygen and carbon impurities in Si.

  3. Calculated and Experimental Research of Sheet Resistances of Laser-Doped Silicon Solar Cells

    NASA Astrophysics Data System (ADS)

    Li, Tao; Wang, Wen-Jing

    2015-02-01

    The calculated and experimental research of sheet resistances of crystalline silicon solar cells by dry laser doping is investigated. The nonlinear numerical model on laser melting of crystalline silicon and liquid-phase diffusion of phosphorus atoms by dry laser doping is analyzed by the finite difference method implemented in MATLAB. The melting period and melting depth of crystalline silicon as a function of laser energy density is achieved. The effective liquid-phase diffusion of phosphorus atoms in melting silicon by dry laser doping is confirmed by the rapid decrease of sheet resistances in experimental measurement. The plateau of sheet resistances is reached at around 15Ω/□. The calculated sheet resistances as a function of laser energy density is obtained and the calculated results are in good agreement with the corresponding experimental measurement. Due to the successful verification by comparison between experimental measurement and calculated results, the simulation results could be used to optimize the virtual laser doping parameters.

  4. Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon

    SciTech Connect

    Torigoe, Kazuhisa Fujise, Jun; Ono, Toshiaki; Nakamura, Kozo

    2014-11-21

    The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing oxygen out-diffusion profile changes found at the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate by secondary ion mass spectrometry. It was found that the diffusivity is proportional to the square root of boron concentration in the range of 10{sup 18 }cm{sup −3}–10{sup 19 }cm{sup −3} at temperatures from 750 °C to 950 °C. The model based on the diffusion of oxygen dimers in double positive charge state could explain the enhanced diffusion. We have concluded that oxygen diffusion enhanced in heavily boron-doped silicon is attributed to oxygen dimers ionized depending on Fermi level position.

  5. Physics of heavily doped silicon and solar-cell parameter measurement

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1984-01-01

    A study of the physics of heavily doped silicon and solar cell parameter measurement was undertaken. The parameters investigated were energy gap, lifetime, recombination velocity, diffusivity, mobility and if N or P is high.

  6. Controlling the dopant dose in silicon by mixed-monolayer doping.

    PubMed

    Ye, Liang; Pujari, Sidharam P; Zuilhof, Han; Kudernac, Tibor; de Jong, Michel P; van der Wiel, Wilfred G; Huskens, Jurriaan

    2015-02-11

    Molecular monolayer doping (MLD) presents an alternative to achieve doping of silicon in a nondestructive way and holds potential for realizing ultrashallow junctions and doping of nonplanar surfaces. Here, we report the mixing of dopant-containing alkenes with alkenes that lack this functionality at various ratios to control the dopant concentration in the resulting monolayer and concomitantly the dopant dose in the silicon substrate. The mixed monolayers were grafted onto hydrogen-terminated silicon using well-established hydrosilylation chemistry. Contact angle measurements, X-ray photon spectroscopy (XPS) on the boron-containing monolayers, and Auger electron spectroscopy on the phosphorus-containing monolayers show clear trends as a function of the dopant-containing alkene concentration. Dynamic secondary-ion mass spectroscopy (D-SIMS) and Van der Pauw resistance measurements on the in-diffused samples show an effective tuning of the doping concentration in silicon. PMID:25607722

  7. Behaviour of Silicon-Doped CFC Limiter under High Heat Load in TEXTOR-94

    NASA Astrophysics Data System (ADS)

    Huber, A.; Philipps, V.; Hirai, T.; Kirschner, A.; Lehnen, M.; Pospieszczyk, A.; Schweer, B.; Sergienko, G.

    In order to study the impurity production, recycling and power deposition a Si doped CFC test limiter (NS31) was used in TEXTOR-94. The release of impurities (C, Si, O, Cr, CD radicals) was measured spectroscopically. A reduced methane production was found in the Si doped graphite when compared to a pure graphite limiter. A smaller decrease of the carbon fluxes could also be observed. The limiter contained about 1%-1.5% of Si, but a relative Si flux (Si/D) from the Si doped CFC surface between 0.12% and 0.4% has been measured. A chemical erosion of Si due to formation of SiDx has not been observed. Silicon evaporated from the surface at temperatures above 1500°C. This led to an increase of Si concentration and total radiation losses from the plasma. Surface analysis shows the formation of microcracks and holes on the plasma exposed limiter surface. The released Si was deposited in the vicinity of the tangency point of the limiter. Whereas a Si depletion was observed in the area of highest power loading with values reaching in and in-between fibres values of 0.03% and 0.02% respectively.

  8. Reaction studies of hot silicon, germanium and carbon atoms

    SciTech Connect

    Gaspar, P.P.

    1989-02-01

    Research has been continued on hot silicon, germanium and carbon atoms. The results of experiments directed toward attaining the goals of this research program are briefly presented for the period September 1, 1987 to January 31, 1989 in sections entitled: (1) The mechanism of hydrogen acquisition by high energy silicon atoms. (2) The mechanism of disilene formation in the reactions of recoiling silicon atoms with silane. (3) The contribution of ionic processes to the primary reactions of recoiling silicon atoms. (4) The role of phosphine in hydrogen acquisition by recoiling silicon atoms. (5) Mechanism of reaction of recoiling carbon atoms with aromatic molecules.

  9. Strong adsorption of Al-doped carbon nanotubes toward cisplatin

    NASA Astrophysics Data System (ADS)

    Li, Wei; Li, Guo-Qing; Lu, Xiao-Min; Ma, Juan-Juan; Zeng, Peng-Yu; He, Qin-Yu; Wang, Yin-Zhen

    2016-08-01

    The adsorption of cisplatin molecule on Al-doped CNTs is investigated using density functional theory. The obtained results indicate that Al-doped carbon nanotubes can strongly absorb cisplatin. After absorbing cisplatin, the symmetry of CNTs has some changes. We innovatively defined a parameter of symmetry variation which relates to the adsorption. By analyzing the electronic structure, it can be concluded that under the circumstance that cisplatin was absorbed by Al-doped CNTs through aluminum atom of Al-doped CNTs. In conclusion, Al-doped CNTs is a kind of potential delivery carrier with high quality for anticancer drug cisplatin.

  10. Measured Enthalpies of Adsorption of Boron-Doped Activated Carbons

    NASA Astrophysics Data System (ADS)

    Beckner, M.; Romanos, J.; Dohnke, E.; Singh, A.; Schaeperkoetter, J.; Stalla, D.; Burress, J.; Jalisatgi, S.; Suppes, G.; Hawthorne, M. F.; Yu, P.; Wexler, C.; Pfeifer, P.

    2012-02-01

    There is significant interest in the properties of boron-doped activated carbons for their potential to improve hydrogen storage.ootnotetextMultiply Surface-Functionalized Nanoporous Carbon for Vehicular Hydrogen Storage, P. Pfeifer et al. DOE Hydrogen Program 2011 Annual Progress Report, IV.C.3, 444-449 (2011). Boron-doped activated carbons have been produced using a process involving the pyrolysis of decaborane (B10H14) and subsequent high-temperature annealing. In this talk, we will present a systematic study of the effect of different boron doping processes on the samples' structure, hydrogen sorption, and surface chemistry. Initial room temperature experiments show a 20% increase in the hydrogen excess adsorption per surface area compared to the undoped material. Experimental enthalpies of adsorption will be presented for comparison to theoretical predictions for boron-doped carbon materials. Additionally, results from a modified version of the doping process will be presented.

  11. Process for fabricating device structures for real-time process control of silicon doping

    DOEpatents

    Weiner, Kurt H.

    2001-01-01

    Silicon device structures designed to allow measurement of important doping process parameters immediately after the doping step has occurred. The test structures are processed through contact formation using standard semiconductor fabrication techniques. After the contacts have been formed, the structures are covered by an oxide layer and an aluminum layer. The aluminum layer is then patterned to expose the contact pads and selected regions of the silicon to be doped. Doping is then performed, and the whole structure is annealed with a pulsed excimer laser. But laser annealing, unlike standard annealing techniques, does not effect the aluminum contacts because the laser light is reflected by the aluminum. Once the annealing process is complete, the structures can be probed, using standard techniques, to ascertain data about the doping step. Analysis of the data can be used to determine probable yield reductions due to improper execution of the doping step and thus provide real-time feedback during integrated circuit fabrication.

  12. Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

    NASA Astrophysics Data System (ADS)

    Matsumura, Hideki; Hayakawa, Taro; Ohta, Tatsunori; Nakashima, Yuki; Miyamoto, Motoharu; Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke

    2014-09-01

    Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH3) or diborane (B2H6) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, "Cat-doping", in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 1018 to 1019 cm-3 for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.

  13. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  14. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

    DOEpatents

    Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

    2014-05-27

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

  15. Heterogeneity of indium antimonide doped with tellurium, germanium, cadmium, and silicon

    SciTech Connect

    Gromova T.I.; Fridshtand, E.S.; Kevorkov, M.N.; Popkov, A.N.; Yorova, E.S.

    1986-05-01

    This paper investigates the heterogeneity of crystals of n- and p-type conductivity with a carrier concentration above 1014 cm-/sup 3/ at 77 K, that are doped with tellurium, germanium, cadmium, and silicon. Cadmium is the weak acceptor, whereas germanium and silicon show amphoteric properties, being located mainly at the sublattice points of the Group V element.

  16. Doped silicon nanocrystals from organic dopant precursor by a SiCl{sub 4}-based high frequency nonthermal plasma

    SciTech Connect

    Zhou, Shu; Ding, Yi; Nozaki, Tomohiro; Pi, Xiaodong

    2014-11-03

    Doped silicon nanocrystals (Si NCs) are of great interest in demanding low-cost nanodevices because of the abundance and nontoxicity of Si. Here, we demonstrate a cost-effective gas phase approach to synthesize phosphorous (P)-doped Si NCs in which the precursors used, i.e., SiCl{sub 4}, trimethyl phosphite (TMP), are both safe and economical. It is found that the TMP-enabled P-doping does not change the crystalline structure of Si NCs. The surface of P-doped Si NCs is terminated by both Cl and H. The Si–H bond density at the surface of P-doped Si NCs is found to be much higher than that of undoped Si NCs. The X-ray photoelectron spectroscopy and electron spin resonance results indicate that P atoms are doped into the substitutional sites of the Si-NC core and electrically active in Si NCs. Unintentional impurities, such as carbon contained in TMP, are not introduced into Si NCs.

  17. Photoconductivity of organic polymer films doped with porous silicon nanoparticles and ionic polymethine dyes

    SciTech Connect

    Davidenko, N. A. Skrichevsky, V. A.; Ishchenko, A. A.; Karlash, A. Yu.; Mokrinskaya, E. V.

    2009-05-15

    Features of electrical conductivity and photoconductivity of polyvinylbutyral films containing porous silicon nanoparticles and similar films doped with cationic and anionic polymethine dyes are studied. Sensitization of the photoelectric effect by dyes with different ionicities in films is explained by the possible photogeneration of holes and electrons from dye molecules and the intrinsic bipolar conductivity of porous silicon nanoparticles. It is assumed that the electronic conductivity in porous silicon nanoparticles is higher in comparison with p-type conductivity.

  18. Refractive index and extinction coefficient of doped polycrystalline silicon films in infrared spectrum

    NASA Astrophysics Data System (ADS)

    Zhang, Xia; Zhang, Dacheng

    2016-03-01

    The refractive index and extinction coefficient in infrared spectrum of the polycrystalline silicon films with different doped dosages, base on the inverse calculation, are obtained by means of utilizing the measured reflectance and transmittance of a layer of material and multilayer films, and the equations derived from photonics and electromagnetic theory. The calculation results demonstrate that the refractive index of the doped polycrystalline silicon films decreases with the doped dosages increasing and the extinction coefficient increases with the doped dosages increasing for a given wavelength. This method used for determining the refractive index and extinction coefficient of the polycrystalline silicon films is effective and has the advantage of that the measured samples are fabricated simply.

  19. Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

    SciTech Connect

    Matsumura, Hideki; Hayakawa, Taro; Ohta, Tatsunori; Nakashima, Yuki; Miyamoto, Motoharu; Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke

    2014-09-21

    Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH₃) or diborane (B₂H₆) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 10¹⁸ to 10¹⁹cm⁻³ for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.

  20. Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon

    NASA Technical Reports Server (NTRS)

    Del Alamo, Jesus A.; Swanson, Richard M.

    1987-01-01

    The relevant hole transport and recombination parameters in heavily doped n-type silicon under steady state are the hole diffusion length and the product of the hole diffusion coefficient times the hole equilibrium concentration. These parameters have measured in phosphorus-doped silicon grown by epitaxy throughout nearly two orders of magnitude of doping level. Both parameters are found to be strong functions of donor concentration. The equilibrium hole concentration can be deduced from the measurement. A rigid shrinkage of the forbidden gap appears as the dominant heavy doping mechanism in phosphorus-doped silicon.

  1. Controlled doping of carbon nanotubes with metallocenes for application in hybrid carbon nanotube/Si solar cells.

    PubMed

    Li, Xiaokai; Guard, Louise M; Jiang, Jie; Sakimoto, Kelsey; Huang, Jing-Shun; Wu, Jianguo; Li, Jinyang; Yu, Lianqing; Pokhrel, Ravi; Brudvig, Gary W; Ismail-Beigi, Sohrab; Hazari, Nilay; Taylor, André D

    2014-06-11

    There is considerable interest in the controlled p-type and n-type doping of carbon nanotubes (CNT) for use in a range of important electronics applications, including the development of hybrid CNT/silicon (Si) photovoltaic devices. Here, we demonstrate that easy to handle metallocenes and related complexes can be used to both p-type and n-type dope single-walled carbon nanotube (SWNT) thin films, using a simple spin coating process. We report n-SWNT/p-Si photovoltaic devices that are >450 times more efficient than the best solar cells of this type currently reported and show that the performance of both our n-SWNT/p-Si and p-SWNT/n-Si devices is related to the doping level of the SWNT. Furthermore, we establish that the electronic structure of the metallocene or related molecule can be correlated to the doping level of the SWNT, which may provide the foundation for controlled doping of SWNT thin films in the future. PMID:24779408

  2. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

    DOEpatents

    Carlson, David E.; Wronski, Christopher R.

    1979-01-01

    A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

  3. One-step preparation of multiwall carbon nanotube/silicon hybrids for solar energy conversion

    NASA Astrophysics Data System (ADS)

    Lobiak, Egor V.; Bychanok, Dzmitry S.; Shlyakhova, Elena V.; Kuzhir, Polina P.; Maksimenko, Sergey A.; Bulusheva, Lyubov G.; Okotrub, Alexander V.

    2016-03-01

    The hybrid material consisting of a thin layer of multiwall carbon nanotubes (MWCNTs) on an n-doped silicon wafer was obtained in one step using an aerosol-assisted catalytic chemical vapor deposition. The MWCNTs were grown from a mixture of acetone and ethanol with ˜0.2 wt.% of iron polyoxomolybdate nanocluster of the keplerate-type structure. The samples produced at 800°C and 1050°C were tested as a solar energy converter. It was shown that photoresponse of the hybrid material significantly depends on the presence of structural defects in MWCNTs, being much higher in the case of more defective nanotubes. This is because defects lead to p-doping of nanotubes, whereas the p-n heterojunction between MWCNTs and silicon provides a high efficiency of the solar cell.

  4. Raman Spectroscopic Study on Phosphorous-Doped Silicon Nanoparticles.

    PubMed

    Momose, Miho; Hirasaka, Masao; Furukawa, Yukio

    2015-07-01

    The Raman spectra of films prepared from 8, 19, and 30 nm nanoparticles of silicon doped with phosphorous were measured with excitation at 514.5 nm. The observed spectra were analyzed by decomposing the observed Raman bands into three symmetric Voigt function bands, which were assigned to the Si-Si stretching modes of crystalline, boundary, and amorphous-like components. The fractions of crystalline, boundary, and amorphous-like regions were estimated from the obtained components. The obtained fractions can be explained as a sphere-like nanoparticle consisting of a crystalline core surrounded with boundary and amorphous-like shells, which is consistent with the transmission electron microscope images showing a sphere-like shape. The observed spectral shape of the 8 nm nanoparticle film showed significant changes upon light irradiation with a power density of 5.5 kW cm(-2), i.e., the amorphous-like region converted to a crystalline one. The temperature of the film under laser irradiation was estimated to be lower than 1041 °C from the anti-Stokes to the Stokes Raman bands due to the Si-Si stretching mode. The observed partial crystallization is probably induced by heating associated with light irradiation. PMID:26036307

  5. Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon

    NASA Astrophysics Data System (ADS)

    Lin, Li-Xia; Chen, Jia-He; Wu, Peng; Zeng, Yu-Heng; Ma, Xiang-Yang; Yang, De-Ren

    2011-03-01

    The formation of a denuded zone (DZ) by conventional furnace annealing (CFA) and rapid thermal annealing (RTA) based denudation processing is investigated and the gettering of copper (Cu) atoms in germanium co-doped heavily phosphorus-doped Czochralski (GHPCZ) silicon wafers is evaluated. It is suggested that both a good quality defect-free DZ with a suitable width in the sub-surface area and a high density bulk micro-defect (BMD) region could be formed in heavily phosphorus-doped Czochralski (HPCZ) silicon and GHPCZ silicon wafers. This is ascribed to the formation of phosphorus-vacancy (P-V) related complexes and germanium-vacancy (GeV) related complexes. Compared with HPCZ silicon, the DZ width is wider in the GHPCZ silicon sample with CFA-based denudation processing but narrower in the one with two-step RTA pretreatments. These phenomena are ascribed to the enhancing effect of germanium on oxygen out-diffusion movement and oxygen precipitate nucleation, respectively. Furthermore, fairly clean DZs near the surface remain in both the HPCZ and GHPCZ silicon wafers after Cu in-diffusion, except for the HPCZ silicon wafer which underwent denudation processing with a CFA pretreatment, suggesting that germanium doping could improve the gettering of Cu contamination.

  6. Grown-in precipitates in heavily phosphorus-doped Czochralski silicon

    NASA Astrophysics Data System (ADS)

    Zeng, Yuheng; Ma, Xiangyang; Chen, Jiahe; Song, Weijie; Wang, Weiyan; Gong, Longfei; Tian, Daxi; Yang, Deren

    2012-02-01

    Through comparing the oxygen precipitation in the heavily and lightly phosphorus (P)-doped Czochralski silicon (CZ Si) specimens subjected to the simulated cooling processes of silicon ingot, we researched the influences of heavily P doping on grown-in precipitates by preferential etching and transmission electron microscopy (TEM). It was found that grown-in precipitates were more significant in heavily P-doped CZ Si than in lightly one. Most grown-in precipitates in heavily P-doped CZ Si were generated at (800-600) °C. The significant grown-in oxygen precipitates in the heavily P-doped CZ Si would change the density and morphology of oxygen precipitation. TEM examination revealed that the grown-in precipitates in heavily P-doped CZ Si were amorphous oxygen precipitates composed of tiny precipitates in essential. Although more or less phosphorus may be incorporated in the grown-in precipitates, however, phosphorus cannot be detected so far. We further confirmed that extending annealing at 550 °C produced significant silicon phosphide (SiP) precipitation in heavily P-doped CZ Si. Summarily, enhancement of grown-in oxygen precipitates was attributed to SiP precipitation and high-concentration vacancy, tentatively. Nonetheless, further investigation on the essential of grown-in precipitates in heavily P-doped CZ Si is worthy.

  7. Silicon Composite Anode Materials for Lithium Ion Batteries Based on Carbon Cryogels and Carbon Paper

    NASA Technical Reports Server (NTRS)

    Woodworth, James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nanofoams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  8. Carbon Cryogel and Carbon Paper-Based Silicon Composite Anode Materials for Lithium-Ion Batteries

    NASA Technical Reports Server (NTRS)

    Woodworth, James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 6 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-5 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  9. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

    DOEpatents

    Haller, Eugene E.; Brundermann, Erik

    2000-01-01

    A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

  10. High surface area silicon carbide-coated carbon aerogel

    DOEpatents

    Worsley, Marcus A; Kuntz, Joshua D; Baumann, Theodore F; Satcher, Jr, Joe H

    2014-01-14

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust. Carbon aerogels can be coated with sol-gel silica and the silica can be converted to silicone carbide, improved the thermal stability of the carbon aerogel.

  11. Method of synthesizing metal doped diamond-like carbon films

    NASA Technical Reports Server (NTRS)

    Ueno, Mayumi (Inventor); Sunkara, Mahendra Kumar (Inventor)

    2003-01-01

    A method of synthesizing metal doped carbon films by placing a substrate in a chamber with a selected amount of a metalorganic compound. An electron cyclotron resonance is applied to the chamber in order to vaporize the metalorganic compound. The resonance is applied to the chamber until a metal doped carbon film is formed. The metalorganic compound is preferably selected from the group consisting of an organic salt of ruthenium, palladium, gold or platinum.

  12. Application of neutron transmutation doping method to initially p-type silicon material.

    PubMed

    Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

    2009-01-01

    The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established. PMID:19318259

  13. Carbon Doped MgB2 Thin Films using TMB

    NASA Astrophysics Data System (ADS)

    Wilke, R. H. T.; Li, Qi; Xi, X. X.; Lamborn, D. R.; Redwing, J.

    2007-03-01

    The most effective method to enhance the upper critical field in MgB2 is through carbon doping. In the case of thin films, ``alloying'' with carbon has resulted in enhanced Hc2 values estimated to be as high as 70 T for H parallel to ab and 40 T for H perpendicular ab [1]. ``Alloying'' refers to the in-situ Hybrid Physical-Chemical Vapor Deposition (HPCVD) of carbon containing MgB2 films using (C5H5)2Mg as the carbon source. While these films exhibit enhanced Hc2 values, there are amorphous boron- carbon phases in the grain boundaries that reduce the cross section area for superconducting current. We present here the results of our attempts to make more homogeneously carbon doped thin films using gaseuous trimethyl-boron (TMB) as the carbon source. Initial results indicate different behavior upon carbon doping using TMB from carbon-alloying. The microstructures and upper critical fields of the carbon doped films using TMB and carbon alloyed films will be compared. [1] V. Braccini et al., Phys. Rev. B 71 (2005) 012504. [2] A.V. Pogrebnyakov et al., Appl. Phys. Lett 85 (2004) 2017.

  14. Efficient photocatalytic activity with carbon-doped SiO2 nanoparticles.

    PubMed

    Zhang, Dongen; Wu, Jinbo; Zhou, Bingpu; Hong, Yaying; Li, Shunbo; Wen, Weijia

    2013-07-01

    Photocatalysis provides a 'green' approach to completely eliminate various kinds of contaminants that are fatal for current environmental and energy issues. Semiconductors are one of the most frequently used photocatalysts as they can absorb light over a wide spectral range. However, it is also well known that naked SiO2 is not an efficient photocatalyst due to its relatively large band gap, which could only absorb shortwave ultraviolet light. In this report, nanoscale particles of carbon-doped silicon dioxide (C-doped SiO2) for use in photocatalysis were successfully prepared by a facile one-pot thermal process using tetraethylorthosilicate (TEOS) as the source of both silicon and carbon. These particles were subsequently characterized by thermogravimetric analysis, X-ray diffraction, standard and high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The C-doped SiO2 displayed outstanding photocatalytic properties, as evidenced by its catalysis of Rhodamine B degradation under near-UV irradiation. We propose that carbon doping of the SiO2 lattice creates new energy states between the bottom of the conduction band and the top of the valence band, which narrows the band gap of the material. As a result, the C-doped SiO2 nanoparticles exhibit excellent photocatalytic activities in a neutral environment. The novel synthesis reported herein for this material is both energy efficient and environmentally friendly and as such shows promise as a technique for low-cost, readily scalable industrial production. PMID:23727825

  15. N-Type delta Doping of High-Purity Silicon Imaging Arrays

    NASA Technical Reports Server (NTRS)

    Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

    2005-01-01

    A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

  16. Reactive Melt Infiltration Of Silicon Into Porous Carbon

    NASA Technical Reports Server (NTRS)

    Behrendt, Donald R.; Singh, Mrityunjay

    1994-01-01

    Report describes study of synthesis of silicon carbide and related ceramics by reactive melt infiltration of silicon and silicon/molybdenum alloys into porous carbon preforms. Reactive melt infiltration has potential for making components in nearly net shape, performed in less time and at lower temperature. Object of study to determine effect of initial pore volume fraction, pore size, and infiltration material on quality of resultant product.

  17. Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon

    NASA Astrophysics Data System (ADS)

    Shen, Lei; Zeng, Minggang; Lu, Yunhao; Yang, Ming; Feng, Yuan Ping

    2013-12-01

    A two-step doping process, magnetic followed by charge or vice versa, is required to produce massive topological surface states (TSS) in topological insulators for many physics and device applications. Here, we demonstrate simultaneous magnetic and hole doping achieved with a single dopant, carbon, in Bi2Se3 by first-principles calculations. Carbon substitution for Se (CSe) results in an opening of a sizable surface Dirac gap (up to 82 meV), while the Fermi level remains inside the bulk gap and close to the Dirac point at moderate doping concentrations. The strong localization of 2p states of CSe favors spontaneous spin polarization via a p-p interaction and formation of ordered magnetic moments mediated by surface states. Meanwhile, holes are introduced into the system by CSe. This dual function of carbon doping suggests a simple way to realize insulating massive TSS.

  18. Characteristic Study of Boron Doped Carbon Nanowalls Films Deposited by Microwave Plasma Enhanced Chemical Vapor Deposition.

    PubMed

    Lu, Chunyuan; Dong, Qi; Tulugan, Kelimu; Park, Yeong Min; More, Mahendra A; Kim, Jaeho; Kim, Tae Gyu

    2016-02-01

    In this research, catalyst-free vertically aligned boron doped carbon nanowalls films were fabricated on silicon (100) substrates by MPECVD using feeding gases CH4, H2 and B2H6 (diluted with H2 to 5% vol) as precursors. The substrates were pre-seeded with nanodiamond colloid. The fabricated CNWs films were characterized by Scanning Electron Microscopy (SEM) and Raman Spectroscopy. The data obtained from SEM confirms that the CNWs films have different density and wall thickness. From Raman spectrum, a G peak around 1588 cm(-1) and a D band peak at 1362 cm(-1) were observed, which indicates a successful fabrication of CNWs films. The EDX spectrum of boron doped CNWs film shows the existence of boron and carbon. Furthermore, field emission properties of boron doped carbon nanowalls films were measured and field enhancement factor was calculated using Fowler-Nordheim plot. The result indicates that boron doped CNWs films could be potential electron emitting materials. PMID:27433646

  19. Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy

    SciTech Connect

    Das Kanungo, Pratyush; Zakharov, Nikolai; Bauer, Jan; Breitenstein, Otwin; Werner, Peter; Goesele, Ulrich

    2008-06-30

    Epitaxial silicon nanowires (NWs) of short heights ({approx}280 nm) on Si <111> substrate were grown and doped in situ with boron on a concentration range of 10{sup 15}-10{sup 19} cm{sup -3} by coevaporation of atomic Si and B by molecular beam epitaxy. Transmission electron microscopy revealed a single-crystalline structure of the NWs. Electrical measurements of the individual NWs confirmed the doping. However, the low doped (10{sup 15} cm{sup -3}) and medium doped (3x10{sup 16} and 1x10{sup 17} cm{sup -3}) NWs were heavily depleted by the surface states while the high doped (10{sup 18} and 10{sup 19} cm{sup -3}) ones showed volume conductivities expected for the corresponding intended doping levels.

  20. Silicon-Compatible Carbon-Based Micro-Supercapacitors.

    PubMed

    Zhuang, Xiaodong; Feng, Xinliang

    2016-05-17

    CSi electronics: Recently, Simon and co-workers demonstrated silicon-wafer-supported elastic carbide-derived carbons (CDCs) films without any delamination or cracks for micro-supercapacitor application. The fabrication of these CDC films is particularly important for the practical application of micro-supercapacitors in silicon-based electronics and flexible electronics. PMID:27101107

  1. Polycrystalline silicon semiconducting material by nuclear transmutation doping

    DOEpatents

    Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

    1978-01-01

    A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

  2. Effect of silicon, tantalum, and tungsten doping and polarization on bioactivity of hydroxyapatite

    NASA Astrophysics Data System (ADS)

    Dhal, Jharana

    Hydroxyapatite (HAp) ceramics has important applications as bone graft because of the structural and compositional similarities with bone tissue. However, inferior osteogenic capacity to bone and poor mechanical properties have been identified to be major disadvantages of synthetic HAp compared to the living bone tissue. The objective of the current study is to evaluate the effect of doping with higher valent cations (Tungsten, tantalum, and silicon) and polarization or combination of both on change in property of doped HAp and subsequent impact its bioactivity. In vitro study with human osteoblast cells was used to investigate the influences of doping and polarization on bone cell-materials interactions. The bioactivity of doped HAp was compared with pure HAp. Effect of doping and polarization on the change in HAp was investigated by monitoring change in mineral phases, stored charge, and activation energy of HAp. Activation energy of depolarization was used to explain the possible mechanism of polarization in doped samples. Bioactivity of HAp increased when doped with tantalum and tungsten. Polarization further increased the bioactivity of tungsten- and tantalum-doped samples. Increase in bioactivity on polarized and doped samples was attributed to increase in surface energy and increase in surface wettability. Whereas, an increase in bioactivity on doped unpolarized surface was attributed to change in microstructure. Polarized charge calculated from TSDC indicates that polarized charge decreases on tantalum- and tungsten-doped HAp. The decrease in polarized charge was attributed to the presence of significant amount of different phases that may hinder the ionic motion in doped samples. However, for silicon-doped HAp, TSDC study showed no difference in the mechanism of polarization between doped and undoped samples. Increase in silicon doping decreased the grain size though mechanism is not affected by grain size. Total stored charge decreased with increase in

  3. Multiple doping of silicon-germanium alloys for thermoelectric applications

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre; Vining, Cronin B.; Borshchevsky, Alex

    1989-01-01

    It is shown that heavy doping of n-type Si/Ge alloys with phosphorus and arsenic (V-V doping interaction) by diffusion leads to a significant enhancement of their carrier concentration and possible improvement of the thermoelectric figure of merit. High carrier concentrations were achieved by arsenic doping alone, but for a same doping level higher carrier mobilities and lower resistivities are obtained through phosphorus doping. By combining the two dopants with the proper diffusion treatments, it was possible to optimize the different properties, obtaining high carrier concentration, good carrier mobility and low electrical resistivity. Similar experiments, using the III-V doping interaction, were conducted on boron-doped p-type samples and showed the possibility of overcompensating the samples by diffusing arsenic, in order to get n-type behavior.

  4. Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing

    NASA Astrophysics Data System (ADS)

    Abadli, S.; Mansour, F.; Perrera, E. Bedel

    We have investigated and modeled the complex phenomenon of boron (B) redistribution process in strongly doped silicon bilayers structure. A one-dimensional two stream transfer model well adapted to the particular structure of bi- layers and to the effects of strong-concentrations has been developed. This model takes into account the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method, using in-situ nitrogen- doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P+) layer. To avoid long redistributions, thermal annealing was carried out at relatively lowtemperatures (600 °C and 700 °C) for various times ranging between 30 minutes and 2 hours. The good adjustment of the simulated profiles with the experimental secondary ion mass spectroscopy (SIMS) profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders kinetics.

  5. Method for making defect-free zone by laser-annealing of doped silicon

    DOEpatents

    Narayan, Jagdish; White, Clark W.; Young, Rosa T.

    1980-01-01

    This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.

  6. Reaction studies of hot silicon, germanium and carbon atoms

    SciTech Connect

    Gaspar, P.P.

    1986-11-15

    Research has been continued on hot silicon, germanium and carbon atoms. Progress in the period November 16, 1985 to November 15, 1986 is reviewed in the following areas: (1) Recoil atom reaction studies. (2) Reactions of thermally generated free atoms.

  7. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    NASA Technical Reports Server (NTRS)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  8. Transforming chitosan into N-doped graphitic carbon electrocatalysts.

    PubMed

    Wu, T X; Wang, G Z; Zhang, X; Chen, C; Zhang, Y X; Zhao, H J

    2015-01-25

    Chitosan, the only alkaline polysaccharide in nature with rich nitrogen content, is used as the sole precursor to obtain N-doped graphitic carbon-based ORR electrocatalysts. The findings of this work demonstrate that cheap, plentiful and renewable biomasses can be transformed into high value functional carbon materials. PMID:25486248

  9. Doping of carbon foams for use in energy storage devices

    DOEpatents

    Mayer, S.T.; Pekala, R.W.; Morrison, R.L.; Kaschmitter, J.L.

    1994-10-25

    A polymeric foam precursor, wetted with phosphoric acid, is pyrolyzed in an inert atmosphere to produce an open-cell doped carbon foam, which is utilized as a lithium intercalation anode in a secondary, organic electrolyte battery. Tests were conducted in a cell containing an organic electrolyte and using lithium metal counter and reference electrodes, with the anode located there between. Results after charge and discharge cycling, for a total of 6 cycles, indicated a substantial increase in the energy storage capability of the phosphorus doped carbon foam relative to the undoped carbon foam, when used as a rechargeable lithium ion battery. 3 figs.

  10. Doping of carbon foams for use in energy storage devices

    DOEpatents

    Mayer, Steven T.; Pekala, Richard W.; Morrison, Robert L.; Kaschmitter, James L.

    1994-01-01

    A polymeric foam precursor, wetted with phosphoric acid, is pyrolyzed in an inert atmosphere to produce an open-cell doped carbon foam, which is utilized as a lithium intercalation anode in a secondary, organic electrolyte battery. Tests were conducted in a cell containing an organic electrolyte and using lithium metal counter and reference electrodes, with the anode located therebetween. Results after charge and discharge cycling, for a total of 6 cycles, indicated a substantial increase in the energy storage capability of the phosphorus doped carbon foam relative to the undoped carbon foam, when used as a rechargeable lithium ion battery.

  11. Modulation of electronic properties of silicon carbide nanotubes via sulphur-doping: An ab initio study

    NASA Astrophysics Data System (ADS)

    Singh, Ram Sevak; Solanki, Ankit

    2016-03-01

    Silicon carbide nanotubes (SiCNTs) have received a great deal of scientific and commercial interest due to their intriguing properties that include high temperature stability and electronic properties. For their efficient and widespread applications, tuning of electronic properties of SiCNTs is an attractive study. In this article, electronic properties of sulphur doped (S-doped) zigzag (9 , 0) SiCNT is investigated by ab initio calculations based on density functional theory (DFT). Energy band structures and density of states of fully optimized undoped and doped structures with varying dopant concentration are calculated. S-doped on C-site of the nanotube exhibits a monotonic reduction of energy gap with increase in dopant concentration, and the nanotube transforms from semiconductor to metal at high dopant concentration. In case of S-doped on Si-site doping has less influence on modulating electronic structures, which results in reduction of energy gap up to a moderate doping concentration. Importantly, S preferential substitutes of Si-sites and the nanotube with S-doped on Si-site are energetically more stable as compared to the nanotube with S-doped on C-site. The study of tunable electronic properties in S-doped SiCNT may have potential in fabricating nanoelectronic devices, hydrogen storage and gas sensing applications.

  12. Doping enhanced barrier lowering in graphene-silicon junctions

    NASA Astrophysics Data System (ADS)

    Zhang, Xintong; Zhang, Lining; Chan, Mansun

    2016-06-01

    Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.

  13. A study of improvements in silicon solar cell efficiency due to various geometrical and doping modifications

    NASA Technical Reports Server (NTRS)

    Dunbar, P. M.; Hauser, J. R.

    1976-01-01

    This paper presents the results of continued studies of silicon solar cell operation and limitations. The objective of this paper is to report on geometrical and doping changes in silicon solar cells which result in predictions of high efficiencies. Efficiencies as high as 20 per cent (uncorrected for metal coverage and ohmic sheet resistance) have been calculated for optimized cells. The conditions required to achieve these efficiency values are discussed.

  14. Single Walled Carbon Nanotube/Silicon Heterojunctions

    NASA Astrophysics Data System (ADS)

    Wu, Zhuangchun

    2005-11-01

    Characterization of the electrical heterojunction between single walled carbon nanotubes (SWNTs) and semiconductors is important for an array of potential applications. Thin, homogeneous, transparent, films of 100% SWNTs exhibiting good electrical conductivity [1] have already been demonstrated as the hole injection electrode in GaN light emitting diodes [2]. The simultaneous transparency and high electrical conductivity of these films makes them similarly promising for the light transmissive electrode in photovoltaic devices. SWNTs have moreover long been proposed as on-chip, device interconnects. To understand the electrical coupling between the nanotubes and semiconductors, likely to have relevance in such devices, we have begun a systematic exploration of the electrical properties of SWNT/silicon hetrojunctions. We will discuss findings as well as a novel test method made possible by the unique morphology of the nanotubes. 1. Z. Wu, Z. Chen, X. Du, J. M. Logan, J. Sippel, M. Nikolou, K. Kamaras, J. R. Reynolds, D. B. Tanner, A. F. Hebard, A. G. Rinzler, Science 305, 1273 (2004) 2. K. Lee, Z. Wu, Z. Chen, F. Ren, S. J. Pearton, A. G. Rinzler, Nano Lett. 4, 911 (2004)

  15. Nitrogen-doped, carbon-rich, highly photoluminescent carbon dots from ammonium citrate

    NASA Astrophysics Data System (ADS)

    Yang, Zhi; Xu, Minghan; Liu, Yun; He, Fengjiao; Gao, Feng; Su, Yanjie; Wei, Hao; Zhang, Yafei

    2014-01-01

    The synthesis of water-soluble nitrogen-doped carbon dots has received great attention, due to their wide applications in oxygen reduction reaction, cell imaging, sensors, and drug delivery. Herein, nitrogen-doped, carbon-rich, highly photoluminescent carbon dots have been synthesized for the first time from ammonium citrate under hydrothermal conditions. The obtained nitrogen-doped carbon dots possess bright blue luminescence, short fluorescence lifetime, pH-sensitivity and excellent stability at a high salt concentration. They have potential to be used for pH sensors, cell imaging, solar cells, and photocatalysis.The synthesis of water-soluble nitrogen-doped carbon dots has received great attention, due to their wide applications in oxygen reduction reaction, cell imaging, sensors, and drug delivery. Herein, nitrogen-doped, carbon-rich, highly photoluminescent carbon dots have been synthesized for the first time from ammonium citrate under hydrothermal conditions. The obtained nitrogen-doped carbon dots possess bright blue luminescence, short fluorescence lifetime, pH-sensitivity and excellent stability at a high salt concentration. They have potential to be used for pH sensors, cell imaging, solar cells, and photocatalysis. Electronic supplementary information (ESI) available: The curve of photoluminescence and absorbance of N-doped CDs and quinine sulfate, and the table showing XPS detailed information. See DOI: 10.1039/c3nr05380f

  16. Structural evolution and electronic properties of n-type doped hydrogenated amorphous silicon thin films

    NASA Astrophysics Data System (ADS)

    He, Jian; Li, Wei; Xu, Rui; Qi, Kang-Cheng; Jiang, Ya-Dong

    2011-12-01

    The relationship between structure and electronic properties of n-type doped hydrogenated amorphous silicon (a-Si:H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD) at various substrate temperatures. Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to evaluate the structural evolution, meanwhile, electronic-spin resonance (ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin films. Results reveal that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.

  17. Enhanced Photoluminescence Properties of Carbon Dots by Doping with Europium.

    PubMed

    Chen, Yuan; Xu, Jiafu; Liu, Bitao; Li, Jiyun; Fang, Xiaomei; Xiong, Liqiong; Peng, Lingling; Han, Tao; Tu, Mingjing

    2016-04-01

    Europium (Eu) doped carbon dots (CDs) were synthesized via a rapid and simple microwave medi- ated method using polyethylene glycol (PEG) as a precursor, and characterized in detail. The results were that these as-prepared CDs showed a uniform and small particle size, and exhibit good pho- tostability and high photoluminescence quantum yields. Additionally, it also found that the doped Eu would change the fluorescence properties, which indicates potential applications in the field of biolabeling. PMID:27451699

  18. Doped carbon nanostructure field emitter arrays for infrared imaging

    DOEpatents

    Korsah, Kofi [Knoxville, TN; Baylor, Larry R [Farragut, TN; Caughman, John B [Oak Ridge, TN; Kisner, Roger A [Knoxville, TN; Rack, Philip D [Knoxville, TN; Ivanov, Ilia N [Knoxville, TN

    2009-10-27

    An infrared imaging device and method for making infrared detector(s) having at least one anode, at least one cathode with a substrate electrically connected to a plurality of doped carbon nanostructures; and bias circuitry for applying an electric field between the anode and the cathode such that when infrared photons are adsorbed by the nanostructures the emitted field current is modulated. The detectors can be doped with cesium to lower the work function.

  19. Carbon Doping of Compound Semiconductor Epitaxial Layers Grown by Metalorganic Chemical Vapor Deposition Using Carbon Tetrachloride.

    NASA Astrophysics Data System (ADS)

    Cunningham, Brian Thomas

    1990-01-01

    A dilute mixture of CCl_4 in high purity H_2 has been used as a carbon dopant source for rm Al_ {x}Ga_{1-x}As grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl_4 doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth parameters on CCl _4 doping have been studied, including growth temperature, growth rate, V/III ratio, Al composition, and CCl_4 flow rate. Although CCl _4 is an effective p-type dopant for MOCVD rm Al_{x}Ga_ {1-x}As, injection of CCl_4 into the reactor during growth of InP resulted in no change in the carrier concentration or carbon concentration. Abrupt, heavy carbon doping spikes in GaAs have been obtained using CCl_4 without a dopant memory effect. By annealing samples with carbon doping spikes grown within undoped, n-type, and p-type GaAs, the carbon diffusion coefficient in GaAs at 825 ^circC has been estimated and has been found to depend strongly on the GaAs background doping. Heavily carbon doped rm Al_{x}Ga _{1-x}As/GaAs superlattices have been found to be more stable against impurity induced layer disordering (IILD) than Mg or Zn doped superlattices, indicating that the low carbon diffusion coefficient limits the IILD process. Carbon doping has been used in the base region on an Npn AlGaAs/GaAs heterojunction bipolar transistor (HBT). Transistors with 3 x 10 μm self-aligned emitter fingers have been fabricated which exhibit a current gain cutoff frequency of f_ {rm t} = 26 GHz.

  20. Water dispersible, highly graphitic and nitrogen-doped carbon nanobubbles.

    PubMed

    Soll, Sebastian; Fellinger, Tim-Patrick; Wang, Xinchen; Zhao, Qiang; Antonietti, Markus; Yuan, Jiayin

    2013-12-20

    Dispersible, highly graphitic, and nitrogen-doped carbon hollow nanospheres (25-90 nm), termed 'nanobubbles', are prepared via confined carbonization through a silica nanocasting technique. Poly(ionic liquid) nanoparticles are employed as easy-to-make and multifunctional templates, which simultaneously act as both the carbon and nitrogen source. The promising potential of the nanobubbles in oxygen reduction reactions for fuel cells is demonstrated. PMID:23847129

  1. Conformal doping of topographic silicon structures using a radial line slot antenna plasma source

    NASA Astrophysics Data System (ADS)

    Ueda, Hirokazu; Ventzek, Peter L. G.; Oka, Masahiro; Horigome, Masahiro; Kobayashi, Yuuki; Sugimoto, Yasuhiro; Nozawa, Toshihisa; Kawakami, Satoru

    2014-06-01

    Fin extension doping for 10 nm front end of line technology requires ultra-shallow high dose conformal doping. In this paper, we demonstrate a new radial line slot antenna plasma source based doping process that meets these requirements. Critical to reaching true conformality while maintaining fin integrity is that the ion energy be low and controllable, while the dose absorption is self-limited. The saturated dopant later is rendered conformal by concurrent amorphization and dopant containing capping layer deposition followed by stabilization anneal. Dopant segregation assists in driving dopants from the capping layer into the sub silicon surface. Very high resolution transmission electron microscopy-Energy Dispersive X-ray spectroscopy, used to prove true conformality, was achieved. We demonstrate these results using an n-type arsenic based plasma doping process on 10 to 40 nm high aspect ratio fins structures. The results are discussed in terms of the different types of clusters that form during the plasma doping process.

  2. Catalytic doping of phosphorus and boron atoms on hydrogenated amorphous silicon films

    NASA Astrophysics Data System (ADS)

    Seto, Junichi; Ohdaira, Keisuke; Matsumura, Hideki

    2016-04-01

    We investigate the low-temperature doping of phosphorus (P) and boron (B) atoms on hydrogenated amorphous silicon (a-Si:H) films by catalytic doping (Cat-doping). The conductivity of a-Si:H films increases as catalyzer temperature (T cat) increases, and the increase in conductivity is accompanied by a significant reduction in activation energy obtained from the Arrhenius plot of the conductivity. Secondary ion mass spectrometry (SIMS) measurement reveals that Cat-doped P and B atoms exist within ˜10-15 nm from the a-Si:H film surface, indicating that the shallow doping of P and B atoms is realized on a-Si:H films similarly to the case of Cat-doping on crystalline Si (c-Si) wafers. We also confirm no additional film deposition during Cat-doping. These results suggest that decomposed species are effectively doped on a-Si:H films similarly to the case of Cat-doping on c-Si.

  3. Plasma stabilisation of metallic nanoparticles on silicon for the growth of carbon nanotubes

    SciTech Connect

    Esconjauregui, S.; Fouquet, M.; Bayer, B. C.; Gamalski, A. D.; Chen Bingan; Xie Rongsi; Hofmann, S.; Robertson, J.; Cepek, C.; Bhardwaj, S.; Ducati, C.

    2012-08-01

    Ammonia (NH{sub 3}) plasma pretreatment is used to form and temporarily reduce the mobility of Ni, Co, or Fe nanoparticles on boron-doped mono- and poly-crystalline silicon. X-ray photoemission spectroscopy proves that NH{sub 3} plasma nitrides the Si supports during nanoparticle formation which prevents excessive nanoparticle sintering/diffusion into the bulk of Si during carbon nanotube growth by chemical vapour deposition. The nitridation of Si thus leads to nanotube vertical alignment and the growth of nanotube forests by root growth mechanism.

  4. Zirconium-doped and silicon-doped TiO2 photocatalysts synthesis from ionic-liquid-like precursors.

    PubMed

    Estruga, Marc; Domingo, Concepción; Domènech, Xavier; Ayllón, José A

    2010-04-15

    Nanocrystalline titania powders doped with either zirconium or silicon were synthesized at low temperature via destabilization of ionic-liquid-like precursors. Titania materials prepared at low temperature (85 degrees C) consisted of anatase nanocrystals of about 25 nm, according to powder X-ray diffraction and transmission electron microscopy. Dopant incorporation was evaluated using inductively coupled plasma-optical emission spectrometry, and it was found that dopant/titanium ratios in the powder (0.011 for Zr and 0.026 for Si) were lower than those in the precursor (0.11 for both). Low-temperature nitrogen adsorption-desorption isotherms displayed the characteristic hysteresis loop of mesoporous materials. Specific surface areas reached values of 130 and 155 m(2) g(-1) for Zr-doped and Si-doped TiO(2), respectively. The photocatalytic activity of the synthesized nanopowders was tested using methyl orange and 4-chlorophenol as target pollutants. PMID:20138629

  5. Highly Doped Polycrystalline Silicon Microelectrodes Reduce Noise in Neuronal Recordings In Vivo

    PubMed Central

    Saha, Rajarshi; Jackson, Nathan; Patel, Chetan; Muthuswamy, Jit

    2013-01-01

    The aims of this study are to 1) experimentally validate for the first time the nonlinear current-potential characteristics of bulk doped polycrystalline silicon in the small amplitude voltage regimes (0–200 μV) and 2) test if noise amplitudes (0–15 μV) from single neuronal electrical recordings get selectively attenuated in doped polycrystalline silicon microelectrodes due to the above property. In highly doped polycrystalline silicon, bulk resistances of several hundred kilo-ohms were experimentally measured for voltages typical of noise amplitudes and 9–10 kΩ for voltages typical of neural signal amplitudes (>150–200 μV). Acute multiunit measurements and noise measurements were made in n = 6 and n = 8 anesthetized adult rats, respectively, using polycrystalline silicon and tungsten microelectrodes. There was no significant difference in the peak-to-peak amplitudes of action potentials recorded from either microelectrode (p > 0.10). However, noise power in the recordings from tungsten microelectrodes (26.36 ± 10.13 pW) was significantly higher (p < 0.001) than the corresponding value in polycrystalline silicon microelectrodes (7.49 ± 2.66 pW). We conclude that polycrystalline silicon microelectrodes result in selective attenuation of noise power in electrical recordings compared to tungsten microelectrodes. This reduction in noise compared to tungsten microelectrodes is likely due to the exponentially higher bulk resistances offered by highly doped bulk polycrystalline silicon in the range of voltages corresponding to noise in multiunit measurements. PMID:20667815

  6. Contact doping of silicon wafers and nanostructures with phosphine oxide monolayers.

    PubMed

    Hazut, Ori; Agarwala, Arunava; Amit, Iddo; Subramani, Thangavel; Zaidiner, Seva; Rosenwaks, Yossi; Yerushalmi, Roie

    2012-11-27

    Contact doping method for the controlled surface doping of silicon wafers and nanometer scale structures is presented. The method, monolayer contact doping (MLCD), utilizes the formation of a dopant-containing monolayer on a donor substrate that is brought to contact and annealed with the interface or structure intended for doping. A unique feature of the MLCD method is that the monolayer used for doping is formed on a separate substrate (termed donor substrate), which is distinct from the interface intended for doping (termed acceptor substrate). The doping process is controlled by anneal conditions, details of the interface, and molecular precursor used for the formation of the dopant-containing monolayer. The MLCD process does not involve formation and removal of SiO(2) capping layer, allowing utilization of surface chemistry details for tuning and simplifying the doping process. Surface contact doping of intrinsic Si wafers (i-Si) and intrinsic silicon nanowires (i-SiNWs) is demonstrated and characterized. Nanowire devices were formed using the i-SiNW channel and contact doped using the MLCD process, yielding highly doped SiNWs. Kelvin probe force microscopy (KPFM) was used to measure the longitudinal dopant distribution of the SiNWs and demonstrated highly uniform distribution in comparison with in situ doped wires. The MLCD process was studied for i-Si substrates with native oxide and H-terminated surface for three types of phosphorus-containing molecules. Sheet resistance measurements reveal the dependency of the doping process on the details of the surface chemistry used and relation to the different chemical environments of the P═O group. Characterization of the thermal decomposition of several monolayer types formed on SiO(2) nanoparticles (NPs) using TGA and XPS provides insight regarding the role of phosphorus surface chemistry at the SiO(2) interface in the overall MLCD process. The new MLCD process presented here for controlled surface doping

  7. Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

    NASA Astrophysics Data System (ADS)

    Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

    2011-05-01

    The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

  8. Electron and photon degradation in aluminum, gallium and boron doped float zone silicon solar cells

    NASA Technical Reports Server (NTRS)

    Rahilly, W. P.; Scott-Monck, J.; Anspaugh, B.; Locker, D.

    1976-01-01

    Solar cells fabricated from Al, Ga and B doped Lopex silicon over a range of resistivities were tested under varying conditions of 1 MeV electron fluence, light exposures and thermal cycling. Results indicate that Al and Ga can replace B as a P type dopant to yield improved solar cell performance.

  9. Understanding the sprayed boric acid method for bulk doping of silicon ribbons

    NASA Astrophysics Data System (ADS)

    Silva, J. A.; Pêra, David; Brito, Miguel C.; Alves, Jorge Maia; Serra, João; Vallêra, A. M.

    2011-07-01

    The sprayed boric acid (SBA) method for bulk doping of silicon ribbons is investigated. Experimental procedures and main results are reviewed. Computational fluid dynamics and experimental tests using partial spraying suggest the role of gas transported evaporated boron oxide to explain the boron incorporation profiles along the sample. The industrial applicability of the SBA method is discussed.

  10. Oxygen defect processes in silicon and silicon germanium

    SciTech Connect

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlögl, U.

    2015-06-15

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  11. Oxygen defect processes in silicon and silicon germanium

    NASA Astrophysics Data System (ADS)

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlögl, U.

    2015-06-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  12. Electronic transport in phosphorus-doped silicon nanocrystal networks.

    PubMed

    Stegner, A R; Pereira, R N; Klein, K; Lechner, R; Dietmueller, R; Brandt, M S; Stutzmann, M; Wiggers, H

    2008-01-18

    We have investigated the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals (Si-NCs). Electrically detected magnetic resonance (EDMR) studies on Si-NCs films, which show a strong increase of conductivity with doping of individual Si-NCs, reveal that P donors and Si dangling bonds contribute to dark conductivity via spin-dependent hopping, whereas in photoconductivity, these states act as spin-dependent recombination centers of photogenerated electrons and holes. Comparison between EDMR and conventional electron paramagnetic resonance shows that different subsets of P-doped nanocrystals contribute to the different transport processes. PMID:18232904

  13. Synthesis and characterization of discrete luminescent erbium-doped silicon nanocrystals

    SciTech Connect

    John, J.S.; Coffer, J.L.; Chen, Y.; Pinizzotto, R.F.

    1999-03-10

    The preparation of discrete erbium-doped silicon nanoparticles prepared by the co-pyrolysis of disilane and the volatile complex Er(tmhd){sub 3} (tmhd = 2,2,6,6-tetramethyl-3,5-heptanedionato) is described. The nanoparticles were characterized by transmission electron microscopy, selected area electron diffraction, X-ray dispersive spectroscopy, photoluminescence, and UV-visible absorption spectroscopies. Erbium-doped silicon nanoparticles possess a distinctive dark contrast in the transmission electron microscope, and the presence of erbium is confirmed by X-ray energy dispersive spectroscopy. The mean diameter of the nanoparticle aggregates can be shifted by altering the length of the pyrolysis oven employed. Characteristic Er{sup 3+} near-infrared photoluminescence at 1,540 nm is detected in these doped nanoparticles; preliminary excitation and power dependence measurements of this luminescence suggest a carrier-mediated emission mechanism.

  14. Ligand Doping on the Hybrid Thermoelectric Materials Based on Terthiophene-Capped Silicon Nanoparticles

    NASA Astrophysics Data System (ADS)

    Ashby, Shane P.; Bian, Tiezheng; Guélou, Gabin; Powell, Anthony V.; Chao, Yimin

    2016-03-01

    Over the past 2 years, silicon nanoparticles (SiNPs) functionalised with conjugated molecules have been shown to have potential as low-temperature thermoelectric materials. One key challenge with such materials relates to the introduction of charge carriers. There are two components of organic/silicon nanocomposite materials in which charge carriers can be introduced: the silicon nanoparticle or the organic ligand. Investigation into the effect of introducing charge carriers on the ligands via oxidation is another step towards understanding and optimising this kind of system. Terthiophene-capped SiNPs have been synthesised and characterised before and after doping. Using different ratios and the oxidant NOBF4 to dope the surface ligands, the electrical conductivity has been measured at ambient temperature. The ratio of oxidant to nanoparticles shows similar trends in electrical resistivity to that of conventional conductive polymers and shows significant improvements over the undoped material.

  15. Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires

    PubMed Central

    Fabbri, Filippo; Rotunno, Enzo; Lazzarini, Laura; Fukata, Naoki; Salviati, Giancarlo

    2014-01-01

    Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV, and a near infra-red emission at 0.8 eV correlate respectively to the direct transition at the Γ point and to the indirect band-gap of wurtzite silicon. We find additional intense emissions due to boron intra-gap states in the short wavelength infra-red range. We present the evolution of the light emission properties as function of the boron doping concentration and the growth temperature. PMID:24398782

  16. Characteristics of Nitrogen Doped Diamond-Like Carbon Films Prepared by Unbalanced Magnetron Sputtering for Electronic Devices.

    PubMed

    Lee, Jaehyeong; Choi, Byung Hui; Yun, Jung-Hyun; Park, Yong Seob

    2016-05-01

    Synthetic diamond-like carbon (DLC) is a carbon-based material used mainly in cutting tool coatings and as an abrasive material. The market for DLC has expanded into electronics, optics, and acoustics because of its distinct electrical and optical properties. In this work, n-doped DLC (N:DLC) films were deposited on p-type silicon substrates using an unbalanced magnetron sputtering (UBMS) method. We investigated the effect of the working pressure on the microstructure and electrical properties of n-doped DLC films. The structural properties of N:DLC films were investigated by Raman spectroscopy and SEM-EDX, and the electrical properties of films were investigated by observing the changes in the resistivity and current-voltage (I-V) properties. The N:DLC films prepared by UBMS in this study demonstrated good conducting and physical properties with n-doping. PMID:27483841

  17. Reaction studies of hot silicon, germanium and carbon atoms

    SciTech Connect

    Gaspar, P.P.

    1990-11-01

    The goal of this project was to increase the authors understanding of the interplay between the kinetic and electronic energy of free atoms and their chemical reactivity by answering the following questions: (1) what is the chemistry of high-energy carbon silicon and germanium atoms recoiling from nuclear transformations; (2) how do the reactions of recoiling carbon, silicon and germanium atoms take place - what are the operative reaction mechanisms; (3) how does the reactivity of free carbon, silicon and germanium atoms vary with energy and electronic state, and what are the differences in the chemistry of these three isoelectronic atoms This research program consisted of a coordinated set of experiments capable of achieving these goals by defining the structures, the kinetic and internal energy, and the charge states of the intermediates formed in the gas-phase reactions of recoiling silicon and germanium atoms with silane, germane, and unsaturated organic molecules, and of recoiling carbon atoms with aromatic molecules. The reactions of high energy silicon, germanium, and carbon atoms created by nuclear recoil were studied with substrates chosen so that their products illuminated the mechanism of the recoil reactions. Information about the energy and electronic state of the recoiling atoms at reaction was obtained from the variation in end product yields and the extent of decomposition and rearrangement of primary products (usually reactive intermediates) as a function of total pressure and the concentration of inert moderator molecules that remove kinetic energy from the recoiling atoms and can induce transitions between electronic spin states. 29 refs.

  18. Optimizing the Electronic Properties of Carbon Nanotubes using Amphoteric Doping

    SciTech Connect

    Sumpter, Bobby G; Meunier, Vincent

    2008-01-01

    Present day semiconductor devices are rapidly approaching their physical limits, prompting an increasing number of researchers across multiple disciplines to attempt devising innovative ways for decreasing the size and increasing the performance of critical features in microelectronic circuits. One possible route is based on the idea of using molecules and molecular structures as functional electronic devices. Carbon nanotubes may provide one of the best materials for molecular electronic devices as they present a flexible and well structured architecture. However, practical realizations of new nanotube-based electronic devices hinge on a number of outstanding problems, such as the capability of achieving large-scale air-stable and controlled doping. Amphoteric doping by encapsulating suitable organic molecules inside of nanotubes may hold tremendous promise in this respect. In order to investigate and optimize the electronic transport properties in carbon nanotubes doped with organic molecules we have performed large-scale quantum electronic structure calculations coupled with a Green's function formulation for determining the conductance. By implementing this hybrid computational approach for examination of the electronic properties of molecular-based structures, an efficient and accurate procedure has been demonstrated for studying the effects of amphoteric doping of carbon nanotubes. With this method, a computational framework for the optimal design of nanotube based electronic devices is becoming routinely accessible. Results from our calculations suggest that the electronic structure of a carbon nanotube can be easily manipulated by encapsulating appropriate organic molecules leading to charge transfer processes that induce efficient n- and p-type doping of the carbon nanotube. Even though a molecule may cause n- or p-doping, we have found it to generally have minor effects on the transport properties of the nanotube as compared to a pristine tube.

  19. Heat-treatment effects in neutron transmutation doped epitaxial silicon

    SciTech Connect

    Cleland, J.W.

    1983-01-01

    Chemical vapor deposition (CVD) of silicon from a gaseous silicon compound onto a heated silicon substrate may be used to deposit an epitaxial SI layer and to obtain an electrical p-n junction. The dopant concentration in the epi-Si layer is a function of the gaseous dopant ion content, flow rate, temperature gradient, and any migration of impurities (autodoping) from the heated substrate. This technical note describes some results of carrier concentration, mobility, and resistivity measurements on small (0.5 cm/sup 2/) epi-Si samples using the van der Pauw (vdP) technique.

  20. Microwave plasma doping: Arsenic activation and transport in germanium and silicon

    NASA Astrophysics Data System (ADS)

    Miyoshi, Hidenori; Oka, Masahiro; Ueda, Hirokazu; Ventzek, Peter L. G.; Sugimoto, Yasuhiro; Kobayashi, Yuuki; Nakamura, Genji; Hirota, Yoshihiro; Kaitsuka, Takanobu; Kawakami, Satoru

    2016-04-01

    Microwave RLSA™ plasma doping technology has enabled conformal doping of non-planar semiconductor device structures. An important attribute of RLSA™ plasma doping is that it does not impart physical damage during processing. In this work, carrier activation measurements for AsH3 based plasma doping into silicon (Si) and germanium (Ge) using rapid thermal annealing are presented. The highest carrier concentrations are 3.6 × 1020 and 4.3 × 1018 cm-3 for Si and Ge, respectively. Secondary ion mass spectrometry depth profiles of arsenic in Ge show that intrinsic dopant diffusion for plasma doping followed by post activation anneal is much slower than for conventional ion implantation. This is indicative of an absence of defects. The comparison is based on a comparison of diffusion times at identical annealing temperatures. The absence of defects, like those generated in conventional ion implantation, in RLSA™ based doping processes makes RLSA™ doping technology useful for damage free conformal doping of topographic structures.

  1. Measurement of carrier transport and recombination parameter in heavily doped silicon

    NASA Technical Reports Server (NTRS)

    Swanson, Richard M.

    1986-01-01

    The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.

  2. Alkali-Doped Lithium Orthosilicate Sorbents for Carbon Dioxide Capture.

    PubMed

    Yang, Xinwei; Liu, Wenqiang; Sun, Jian; Hu, Yingchao; Wang, Wenyu; Chen, Hongqiang; Zhang, Yang; Li, Xian; Xu, Minghou

    2016-09-01

    New alkali-doped (Na2 CO3 and K2 CO3 ) Li4 SiO4 sorbents with excellent performance at low CO2 concentrations were synthesized. We speculate that alkali doping breaks the orderly arrangement of the Li4 SiO4 crystals, hence increasing its specific surface area and the number of pores. It was shown that 10 wt % Na2 CO3 and 5 wt % K2 CO3 are the optimal additive ratios for doped sorbents to attain the highest conversions. Moreover, under 15 vol % CO2 , the doped sorbents present clearly faster absorption rates and exhibit stable cyclic durability with impressive conversions of about 90 %, at least 20 % higher than that of non-doped Li4 SiO4 . The attained conversions are also 10 % higher than the reported highest conversion of 80 % on doped Li4 SiO4 . The performance of Li4 SiO4 is believed to be enhanced by the eutectic melt, and it is the first time that the existence of eutectic Li/Na or Li/K carbonate on doped sorbents when absorbing CO2 at high temperature is confirmed; this was done using systematical analysis combining differential scanning calorimetry with in situ powder X-ray diffraction. PMID:27531239

  3. Hydrophobic and ice-retarding properties of doped silicone rubber coatings

    NASA Astrophysics Data System (ADS)

    Arianpour, F.; Farzaneh, M.; Kulinich, S. A.

    2013-01-01

    In this study, room-temperature vulcanized silicone rubber coatings were prepared by spin-coating hexane-diluted suspensions onto aluminum substrates. Various amounts of carbon-black, titania or ceria nanopowders were incorporated to the coatings as dopants in order to modify their surface roughness, hydrophobic and electrical properties. By changing deposition parameters, superhydrophobic surfaces could be prepared. The freezing behavior of small water droplets was investigated on nanostructured composite surfaces exhibiting different values of wetting hysteresis and was compared with that on uncoated polished aluminum. At approximately -15 °C, the water droplets were found to freeze on polished aluminum after approximately 5 s, while their freezing was delayed to as long as ∼12-13 min on superhydrophobic nanocomposite surfaces doped with ceria or titania powders. Correlations between the wetting hysteresis (and surface roughness) of the samples and freezing time of water droplets on their surfaces were also observed. Icing tests demonstrated delayed ice formation and lower adhesion strength on superhydrophobic samples with small wetting hysteresis.

  4. Synthesis of silicon carbide at room temperature from colloidal suspensions of silicon dioxide and carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Zhukalin, D. A.; Tuchin, A. V.; Kulikova, T. V.; Bityutskaya, L. A.

    2015-11-01

    Experimental and theoretical approaches were used for the investigation of mechanisms and conditions of self-organized nanostructures formation in the drying drop of the mixture of colloidal suspensions of nanoscale amorphous silicon dioxide and carbon nanotubes. The formation of rodlike structures with diameter 250-300nm and length ∼4pm was revealed. The diffraction analysis of the obtained nanostructures showed the formation of the silicon carbide phase at room temperature.

  5. Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

    PubMed Central

    Ambrosio, Antonio; Boscardin, Maurizio; Castrucci, Paola; Crivellari, Michele; Cilmo, Marco; De Crescenzi, Maurizio; De Nicola, Francesco; Fiandrini, Emanuele; Grossi, Valentina; Maddalena, Pasqualino; Passacantando, Maurizio; Santucci, Sandro; Scarselli, Manuela; Valentini, Antonio

    2015-01-01

    Summary A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube–silicon (CNT–Si) heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise. PMID:25821710

  6. Observation of a photoinduced, resonant tunneling effect in a carbon nanotube-silicon heterojunction.

    PubMed

    Aramo, Carla; Ambrosio, Antonio; Ambrosio, Michelangelo; Boscardin, Maurizio; Castrucci, Paola; Crivellari, Michele; Cilmo, Marco; De Crescenzi, Maurizio; De Nicola, Francesco; Fiandrini, Emanuele; Grossi, Valentina; Maddalena, Pasqualino; Passacantando, Maurizio; Santucci, Sandro; Scarselli, Manuela; Valentini, Antonio

    2015-01-01

    A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube-silicon (CNT-Si) heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise. PMID:25821710

  7. Reactive Infiltration of Silicon Melt Through Microporous Amorphous Carbon Preforms

    NASA Technical Reports Server (NTRS)

    Sangsuwan, P.; Tewari, S. N.; Gatica, J. E.; Singh, M.; Dickerson, R.

    1999-01-01

    The kinetics of unidirectional capillary infiltration of silicon melt into microporous carbon preforms have been investigated as a function of the pore morphology and melt temperature. The infiltrated specimens showed alternating bands of dark and bright regions, which corresponded to the unreacted free carbon and free silicon regions, respectively. The decrease in the infiltration front velocity for increasing infiltration distances, is in qualitative agreement with the closed-form solution of capillarity driven fluid flow through constant cross section cylindrical pores. However, drastic changes in the thermal response and infiltration front morphologies were observed for minute differences in the preforms microstructure. This suggests the need for a dynamic percolation model that would account for the exothermic nature of the silicon-carbon chemical reaction and the associated pore closing phenomenon.

  8. Iron-Doped Carbon Aerogels: Novel Porous Substrates for Direct Growth of Carbon Nanotubes

    DOE R&D Accomplishments Database

    Steiner, S. A.; Baumann, T. F.; Kong, J.; Satcher, J. H.; Dresselhaus, M. S.

    2007-02-20

    We present the synthesis and characterization of Fe-doped carbon aerogels (CAs) and demonstrate the ability to grow carbon nanotubes directly on monoliths of these materials to afford novel carbon aerogel-carbon nanotube composites. Preparation of the Fe-doped CAs begins with the sol-gel polymerization of the potassium salt of 2,4-dihydroxybenzoic acid with formaldehyde, affording K{sup +}-doped gels that can then be converted to Fe{sup 2+}- or Fe{sup 3+}-doped gels through an ion exchange process, dried with supercritical CO{sub 2} and subsequently carbonized under an inert atmosphere. Analysis of the Fe-doped CAs by TEM, XRD and XPS revealed that the doped iron species are reduced during carbonization to form metallic iron and iron carbide nanoparticles. The sizes and chemical composition of the reduced Fe species were related to pyrolysis temperature as well as the type of iron salt used in the ion exchange process. Raman spectroscopy and XRD analysis further reveal that, despite the presence of the Fe species, the CA framework is not significantly graphitized during pyrolysis. The Fe-doped CAs were subsequently placed in a thermal CVD reactor and exposed to a mixture of CH{sub 4} (1000 sccm), H{sub 2} (500 sccm), and C{sub 2}H{sub 4} (20 sccm) at temperatures ranging from 600 to 800 C for 10 minutes, resulting in direct growth of carbon nanotubes on the aerogel monoliths. Carbon nanotubes grown by this method appear to be multiwalled ({approx}25 nm in diameter and up to 4 mm long) and grow through a tip-growth mechanism that pushes catalytic iron particles out of the aerogel framework. The highest yield of CNTs were grown on Fe-doped CAs pyrolyzed at 800 C treated at CVD temperatures of 700 C.

  9. Iron-Doped Carbon Aerogels: Novel Porous Substrates for Direct Growth of Carbon Nanotubes

    SciTech Connect

    Steiner, S A; Baumann, T F; Kong, J; Satcher, J H; Dresselhaus, M S

    2007-02-15

    We present the synthesis and characterization of Fe-doped carbon aerogels (CAs) and demonstrate the ability to grow carbon nanotubes directly on monoliths of these materials to afford novel carbon aerogel-carbon nanotube composites. Preparation of the Fe-doped CAs begins with the sol-gel polymerization of the potassium salt of 2,4-dihydroxybenzoic acid with formaldehyde, affording K{sup +}-doped gels that can then be converted to Fe{sup 2+}- or Fe{sup 3+}-doped gels through an ion exchange process, dried with supercritical CO{sub 2} and subsequently carbonized under an inert atmosphere. Analysis of the Fe-doped CAs by TEM, XRD and XPS revealed that the doped iron species are reduced during carbonization to form metallic iron and iron carbide nanoparticles. The sizes and chemical composition of the reduced Fe species were related to pyrolysis temperature as well as the type of iron salt used in the ion exchange process. Raman spectroscopy and XRD analysis further reveal that, despite the presence of the Fe species, the CA framework is not significantly graphitized during pyrolysis. The Fe-doped CAs were subsequently placed in a thermal CVD reactor and exposed to a mixture of CH{sub 4} (1000 sccm), H{sub 2} (500 sccm), and C{sub 2}H{sub 4} (20 sccm) at temperatures ranging from 600 to 800 C for 10 minutes, resulting in direct growth of carbon nanotubes on the aerogel monoliths. Carbon nanotubes grown by this method appear to be multiwalled ({approx}25 nm in diameter and up to 4 mm long) and grow through a tip-growth mechanism that pushes catalytic iron particles out of the aerogel framework. The highest yield of CNTs were grown on Fe-doped CAs pyrolyzed at 800 C treated at CVD temperatures of 700 C.

  10. Iron-doped carbon aerogels: novel porous substrates for direct growth of carbon nanotubes.

    PubMed

    Steiner, Stephen A; Baumann, Theodore F; Kong, Jing; Satcher, Joe H; Dresselhaus, Mildred S

    2007-04-24

    We present the synthesis and characterization of Fe-doped carbon aerogels (CAs) and demonstrate the ability to grow carbon nanotubes directly on monoliths of these materials to afford novel carbon aerogel-carbon nanotube composites. Preparation of the Fe-doped CAs begins with the sol-gel polymerization of the potassium salt of 2,4-dihydroxybenzoic acid with formaldehyde, affording K+-doped gels that can then be converted to Fe2+- or Fe3+-doped gels through an ion exchange process, dried with supercritical CO2, and subsequently carbonized under an inert atmosphere. Analysis of the Fe-doped CAs by TEM, XRD, and XPS revealed that the doped iron species are reduced during carbonization to form metallic iron and iron carbide nanoparticles. The sizes and chemical composition of the reduced Fe species were related to pyrolysis temperature as well as the type of iron salt used in the ion exchange process. Raman spectroscopy and XRD analysis further reveal that, despite the presence of the Fe species, the CA framework is not significantly graphitized during pyrolysis. The Fe-doped CAs were subsequently placed in a thermal CVD reactor and exposed to a mixture of CH4 (1000 sccm), H2 (500 sccm), and C2H4 (20 sccm) at temperatures ranging from 600 to 800 degrees C for 10 min, resulting in direct growth of carbon nanotubes on the aerogel monoliths. Carbon nanotubes grown by this method appear to be multiwalled (approximately 25 nm in diameter and up to 4 microm long) and grow through a tip-growth mechanism that pushes catalytic iron particles out of the aerogel framework. The highest yield of CNTs was grown on Fe-doped CAs pyrolyzed at 800 degrees C treated at CVD temperatures of 700 degrees C. PMID:17381146

  11. Electroless chemical grafting of nitrophenyl groups on n-doped hydrogenated amorphous silicon surfaces.

    PubMed

    Kim, Chulki; Oh, Kiwon; Han, Seunghee; Kim, Kyungkon; Kim, Il Won; Kim, Heesuk

    2014-08-01

    The direct spontaneous grafting of 4-nitrophenyl molecules onto n-doped hydrogenated amorphous silicon (a-Si:H) surfaces without external ultraviolet, thermal, or electrochemical energy was invegtigated. Clean n-doped a-Si:H thin films were dipped in a solution of 4-nitrobenzenediazonium salts (PNBD) in acetonitrile. After the modified surfaces were rinsed, they were analyzed qualitatively and quantitatively by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). XPS and AFM results show that the reaction of an n-doped a-Si:H thin film with PNBD self-terminates without polymerization, after 5 h, and the surface number density of 4-nitrophenyl molecules is 4.2 x 10(15)/cm2. These results demonstrate that the spontaneous grafting of nitrophenyl layers onto n-doped a-Si:H thin films is an attractive pathway toward forming interfaces between a-Si:H and organic layers under ambient conditions. PMID:25936109

  12. Thermodynamics of a phase transition of silicon nanoparticles at the annealing and carbonization of porous silicon

    SciTech Connect

    Nagornov, Yu. S.

    2015-12-15

    The formation of SiC nanocrystals of the cubic modification in the process of high-temperature carbonization of porous silicon has been analyzed. A thermodynamic model has been proposed to describe the experimental data obtained by atomic-force microscopy, Raman scattering, spectral analysis, Auger spectroscopy, and X-ray diffraction spectroscopy. It has been shown that the surface energy of silicon nanoparticles and quantum filaments is released in the process of annealing and carbonization. The Monte Carlo simulation has shown that the released energy makes it possible to overcome the nucleation barrier and to form SiC nanocrystals. The processes of laser annealing and electron irradiation of carbonized porous silicon have been analyzed.

  13. Carbon--silicon coating alloys for improved irradiation stability

    DOEpatents

    Bokros, J.C.

    1973-10-01

    For ceramic nuclear fuel particles, a fission product-retaining carbon-- silicon alloy coating is described that exhibits low shrinkage after exposure to fast neutron fluences of 1.4 to 4.8 x 10/sup 21/ n/cm/sup 2/ (E = 0.18 MeV) at irradiation temperatures from 950 to 1250 deg C. Isotropic pyrolytic carbon containing from 18 to 34 wt% silicon is co-deposited from a gaseous mixiure of propane, helium, and silane at a temperature of 1350 to 1450 deg C. (Official Gazette)

  14. Plasma Implantation Technology for Upcoming Ultra Shallow and Highly Doped Fully Depleted Silicon On Insulator Transistors

    NASA Astrophysics Data System (ADS)

    Gonzatti, Frederic; Milési, Frederic; Delaye, Vincent; Duchaine, Julian; Torregrosa, Frank; Etienne, Hasnaa; Yckache, Karim

    2011-01-01

    To face the continuous dimensions downscaling for upcoming semiconductor devices, we have investigated a plasma immersion ion implantation way and have compared the results to a conventional one. This new implantation method allows, in particular, high and thin doping concentration to field source and drain requirements for 32 nm node and below. In addition to this key step, a silicon selective epitaxy growth has been performed. Thus, n-type and p-type ion implantations have been carried out on thin blanket SOI substrates in Pulsion® plasma ion implantation tool manufactured by Ion Beam Services, with AsH3, BF3 or B2H6 precursors. Then a recrystallization annealing followed by silicon selective epitaxial growth has been performed in a reduced pressure chemical vapor deposition tool. Regarding n-type implantation we observed a poly-silicon growth in areas where the top silicon has been amorphous down to the buried oxide and a mono-silicon growth for areas where the top silicon has not been completely amorphous. Indeed, in this case recrystallization annealing was not sufficient to allow lengthwise solid phase epitaxy growth whereas there were no difficulties for axial one. Regarding p-type implantations no epitaxial growths have been observed at all. This lack of growth cannot be explained by a complete silicon amorphization which would have led to a growth of poly-silicon like for n-type implantation. According to our first results this growth vacancy could be explained by the very high boron atoms concentration on the substrate surface. The latter being resistant to HF-last cleaning could thus block silicon nucleation. However some rinsing processes, more or less aggressive, have been tested to remove this boron silicon alloy layer. Among these different tests, hydrochloric or plasma etching have provided, in some specific cases, promising results allowing an epitaxial silicon growth.

  15. Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100)

    SciTech Connect

    Bagraev, N. T. Kuzmin, R. V.; Gurin, A. S.; Klyachkin, L. E.; Malyarenko, A. M.; Mashkov, V. A.

    2014-12-15

    Electron and hole cyclotron resonance at a frequency of 94 GHz is detected by a change in the intensity of photoluminescence lines whose positions are identical to those of dislocation luminescence lines D1 and D2 in single-crystal silicon and in heavily boron-doped silicon nanostructures on the Si (100) surface. The angular dependence of the spectrum of the optically detected cyclotron resonance corresponds to the tensor of the electron and hole effective mass in single-crystal silicon, and the resonance-line width indicates long carrier free-path times close to 100 ps. The results obtained are discussed within the framework of the interrelation of the electron-vibration coupling to charge and spin correlations in quasi-one-dimensional chains of dangling bonds in silicon.

  16. Nanoscale Etching and Indentation of Silicon Surfaces with Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Dzegilenko, Fedor N.; Srivastava, Deepak; Saini, Subhash

    1998-01-01

    The possibility of nanolithography of silicon and germanium surfaces with bare carbon nanotube tips of scanning probe microscopy devices is considered with large scale classical molecular dynamics (MD) simulations employing Tersoff's reactive many-body potential for heteroatomic C/Si/Ge system. Lithography plays a key role in semiconductor manufacturing, and it is expected that future molecular and quantum electronic devices will be fabricated with nanolithographic and nanodeposition techniques. Carbon nanotubes, rolled up sheets of graphene made of carbon, are excellent candidates for use in nanolithography because they are extremely strong along axial direction and yet extremely elastic along radial direction. In the simulations, the interaction of a carbon nanotube tip with silicon surfaces is explored in two regimes. In the first scenario, the nanotubes barely touch the surface, while in the second they are pushed into the surface to make "nano holes". The first - gentle scenario mimics the nanotube-surface chemical reaction induced by the vertical mechanical manipulation of the nanotube. The second -digging - scenario intends to study the indentation profiles. The following results are reported in the two cases. In the first regime, depending on the surface impact site, two major outcomes outcomes are the selective removal of either a single surface atom or a surface dimer off the silicon surface. In the second regime, the indentation of a silicon substrate by the nanotube is observed. Upon the nanotube withdrawal, several surface silicon atoms are adsorbed at the tip of the nanotube causing significant rearrangements of atoms comprising the surface layer of the silicon substrate. The results are explained in terms of relative strength of C-C, C-Si, and Si-Si bonds. The proposed method is very robust and does not require applied voltage between the nanotube tips and the surface. The implications of the reported controllable etching and hole-creating for

  17. Field emission property of N-doped aligned carbon nanotubes grown by pyrolysis of monoethanolamine

    NASA Astrophysics Data System (ADS)

    Ghosh, Pradip; Tanemura, M.; Soga, T.; Zamri, M.; Jimbo, T.

    2008-07-01

    Densely distributed bamboo-shaped nitrogen-doped aligned carbon nanotubes, grown on silicon substrate by thermal decomposition of monoethanolamine/ferrocene mixtures at 900 ∘C, were investigated for field electron emission. The morphology and crystallinity of the as-grown carbon nanotubes were characterized by SEM, TEM and Raman spectroscopy. X-ray photoelectron spectroscopy was used to analyze the nitrogen concentration on carbon nanotubes and it was observed that nitrogen concentration on nanotubes was 6.6 at.%. Field emission study of as-grown nitrogen-doped carbon nanotubes suggests that they are good emitters with a turn-on and threshold field of 1.8 V/μm and 2.53 V/μm, respectively. The maximum current density was observed to be 6 mA/cm 2 at 3 V/μm. It is considered that the nice field emission performance of CN x nanotube is due to the presence of lone pairs of electrons on nitrogen atom that supplies more electrons to the conduction band.

  18. Nitrogen-Doped Carbon Nanocoil Array Integrated on Carbon Nanofiber Paper for Supercapacitor Electrodes.

    PubMed

    Choi, Won Ho; Choi, Mi Jin; Bang, Jin Ho

    2015-09-01

    Integrating a nanostructured carbon array on a conductive substrate remains a challenging task that presently relies primarily on high-vacuum deposition technology. To overcome the problems associated with current vacuum techniques, we demonstrate the formation of an N-doped carbon array by pyrolysis of a polymer array that was electrochemically grown on carbon fiber paper. The resulting carbon array was investigated for use as a supercapacitor electrode. In-depth surface characterization results revealed that the microtextural properties, surface functionalities, and degree of nitrogen incorporated into the N-doped carbon array can be delicately controlled by manipulating carbonization temperatures. Furthermore, electrochemical measurements showed that subtle changes in these physical properties resulted in significant changes in the capacitive behavior of the N-doped carbon array. Pore structures and nitrogen/oxygen functional groups, which are favorable for charge storage, were formed at low carbonization temperatures. This result showed the importance of having a comprehensive understanding of how the surface characteristics of carbon affect its capacitive performance. When utilized as a substrate in a pseudocapacitive electrode material, the N-doped carbon array maximizes capacitive performance by simultaneously achieving high gravimetric and areal capacitances due to its large surface area and high electrical conductivity. PMID:26264641

  19. A doping-free approach to carbon nanotube electronics and optoelectronics

    NASA Astrophysics Data System (ADS)

    Peng, Lian-Mao; Zhang, Zhiyong; Wang, Sheng; Liang, Xuelei

    2012-12-01

    The electronic properties of conventional semiconductor are usually controlled by doping, which introduces carriers into the semiconductor but also distortion and scattering centers to the otherwise perfect lattice, leading to increased scattering and power consumption that becomes the limiting factors for the ultimate performance of the next generation electronic devices. Among new materials that have been considered as potential replacing channel materials for silicon, carbon nanotubes (CNTs) have been extensively studied and shown to have all the remarkable electronic properties that an ideal electronic material should have, but controlled doping in CNTs has been proved to be challenging. In this article we will review a doping-free approach for constructing nanoelectronic and optoelectronic devices and integrated circuits. This technique relies on a unique property of CNTs, i.e. high quality ohmic contacts can be made to both the conduction band and valence band of a semiconducting CNT. High performance nanoelectronic and optoelectronic devices have been fabricated using CNTs with this method and performance approach to that of quantum limit. In principle high performance electronic devices and optoelectronic devices can be integrated on the same carbon nanotube with the same footing, and this opens new possibilities for electronics beyond the Moore law in the future.

  20. Solid-Source Doping of Float-Zoned Silicon with B, N, O, and C: Preprint

    SciTech Connect

    Ciszek, T. F.

    2003-08-01

    We report on a solid-source method to introduce dopants or controlled impurities directly into the melt zone during float-zone growth of single- or multicrystalline ingots. Unlike the Czochralski (CZ) growth situation, float-zoning allows control over the levels of some impurities (O, C) that cannot be avoided in CZ growth or ingot casting. But aside from impurity studies, the method turns out to be very practical for routine p-type doping in semicontinuous growth processes such as float-zoning, electromagnetic casting, or melt-replenished ribbon growth. Equations governing dopant incorporation, dopant withdrawal, and N co-doping are presented and experimentally verified. Doping uniformity and doping initiation and withdrawal time constants are also reported. The method uses nontoxic source materials and is flexible with quick turnaround times for changing doping levels. Boron p-type doping with nitrogen co-doping is particularly attractive for silicon lattice strengthening against process-induced dislocation motion and also allows greater freedom from incorporation of Si self-interstitial cluster or A and B swirl-type defects and"D"-type microdefects than nitrogen-free p-type material.

  1. Urbach absorption edge in epitaxial erbium-doped silicon

    SciTech Connect

    Shmagin, V. B. Kudryavtsev, K. E.; Shengurov, D. V.; Krasilnik, Z. F.

    2015-02-07

    We investigate the dependencies of the photocurrent in Si:Er p-n junctions on the energy of the incident photons. The exponential absorption edge (Urbach edge) just below fundamental edge of silicon was observed in the absorption spectra of epitaxial Si:Er layers grown at 400–600 C. It is shown that the introduction of erbium significantly enhances the structural disorder in the silicon crystal which was estimated from the slope of the Urbach edge. We discuss the possible nature of the structural disorder in Si:Er and a new mechanism of erbium excitation, which does not require the presence of deep levels in the band gap of silicon.

  2. Radiation tolerance of boron doped dendritic web silicon solar cells

    NASA Technical Reports Server (NTRS)

    Rohatgi, A.

    1980-01-01

    The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.

  3. Low-temperature micro-photoluminescence spectroscopy on laser-doped silicon with different surface conditions

    NASA Astrophysics Data System (ADS)

    Han, Young-Joon; Franklin, Evan; Fell, Andreas; Ernst, Marco; Nguyen, Hieu T.; Macdonald, Daniel

    2016-04-01

    Low-temperature micro-photoluminescence spectroscopy (μ-PLS) is applied to investigate shallow layers of laser-processed silicon for solar cell applications. Micron-scale measurement (with spatial resolution down to 1 μm) enables investigation of the fundamental impact of laser processing on the electronic properties of silicon as a function of position within the laser-processed region, and in particular at specific positions such as at the boundary/edge of processed and unprocessed regions. Low-temperature μ-PLS enables qualitative analysis of laser-processed regions by identifying PLS signals corresponding to both laser-induced doping and laser-induced damage. We show that the position of particular luminescence peaks can be attributed to band-gap narrowing corresponding to different levels of subsurface laser doping, which is achieved via multiple 248 nm nanosecond excimer laser pulses with fluences in the range 1.5-4 J/cm2 and using commercially available boron-rich spin-on-dopant precursor films. We demonstrate that characteristic defect PL spectra can be observed subsequent to laser doping, providing evidence of laser-induced crystal damage. The impact of laser parameters such as fluence and number of repeat pulses on laser-induced damage is also analyzed by observing the relative level of defect PL spectra and absolute luminescence intensity. Luminescence owing to laser-induced damage is observed to be considerably larger at the boundaries of laser-doped regions than at the centers, highlighting the significant role of the edges of laser-doped region on laser doping quality. Furthermore, by comparing the damage signal observed after laser processing of two different substrate surface conditions (chemically-mechanically polished and tetramethylammonium hydroxide etched), we show that wafer preparation can be an important factor impacting the quality of laser-processed silicon and solar cells.

  4. Heavy doping effects in high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.; Landsberg, P. T.; San, C. T.

    1984-01-01

    A model for bandgap shrinkage in semiconductors is developed and applied to silicon. A survey of earlier experiments, and of new ones, give an agreement between the model and experiments on n- and p-type silicon which is good as far as transport measurements in the 300 K range. The discrepancies between theory and experiment are no worse than the discrepancies between the experimental results of various authors. It also gives a good account of recent, optical determinations of band gap shrinkage at 5 K.

  5. Silicon Whisker and Carbon Nanofiber Composite Anode

    NASA Technical Reports Server (NTRS)

    Ma, Junqing (Inventor); Newman, Aron (Inventor); Lennhoff, John (Inventor)

    2015-01-01

    A carbon nanofiber can have a surface and include at least one crystalline whisker extending from the surface of the carbon nanofiber. A battery anode composition can be formed from a plurality of carbon nanofibers each including a plurality of crystalline whiskers.

  6. The observation of structural defects in neutron-irradiated lithium-doped silicon solar cells

    NASA Technical Reports Server (NTRS)

    Sargent, G. A.

    1971-01-01

    Electron microscopy has been used to observe the distribution and morphology of lattice defects introduced into lithium-doped silicon solar cells by neutron irradiation. Upon etching the surface of the solar cells after irradiation, crater-like defects are observed that are thought to be associated with the space charge region around vacancy clusters. Thermal annealing experiments showed that the crater defects were stable in the temperature range 300 to 1200 K in all of the lithium-doped samples. Some annealing of the crater defects was observed to occur in the undoped cells which were irradiated at the lowest doses.

  7. Temperature dependence of nonlinear optical properties in Li doped nano-carbon bowl material

    NASA Astrophysics Data System (ADS)

    Li, Wei-qi; Zhou, Xin; Chang, Ying; Quan Tian, Wei; Sun, Xiu-Dong

    2013-04-01

    The mechanism for change of nonlinear optical (NLO) properties with temperature is proposed for a nonlinear optical material, Li doped curved nano-carbon bowl. Four stable conformations of Li doped corannulene were located and their electronic properties were investigated in detail. The NLO response of those Li doped conformations varies with relative position of doping agent on the curved carbon surface of corannulene. Conversion among those Li doped conformations, which could be controlled by temperature, changes the NLO response of bulk material. Thus, conformation change of alkali metal doped carbon nano-material with temperature rationalizes the variation of NLO properties of those materials.

  8. Eye-safe 2 μm luminescence from thulium-doped silicon.

    PubMed

    Lourenço, Manon; Gwilliam, Russell; Homewood, Kevin

    2011-01-15

    We report on photoluminescence in the 1.7-2.1 μm range of silicon doped with thulium. This is achieved by the implantation of Tm into silicon that has been codoped with boron to reduce the thermal quenching. At least six strong lines can be distinguished at 80 K; at 300 K, the spectrum is dominated by the main emission at 2 μm. These emissions are attributed to the trivalent Tm(3+) internal transitions between the first excited state and the ground state. PMID:21263489

  9. Design and burn-up analyses of new type holder for silicon neutron transmutation doping.

    PubMed

    Komeda, Masao; Arai, Masaji; Tamai, Kazuo; Kawasaki, Kozo

    2016-07-01

    We have developed a new silicon irradiation holder with a neutron filter to increase the irradiation efficiency. The neutron filter is made of an alloy of aluminum and B4C particles. We fabricated a new holder based on the results of design analyses. This filter has limited use in applications requiring prolonged use due to a decrease in the amount of (10)B in B4C particles. We investigated the influence of (10)B reduction on doping distribution in a silicon ingot by using the Monte Carlo Code MVP. PMID:27131643

  10. Orbitronics: the Intrinsic Orbital Hall Effect in p-Doped Silicon

    SciTech Connect

    Bernevig, B.Andrei; Hughes, Taylor L.; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-01-15

    The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that the electric field in p-doped silicon can induce a dissipationless orbital current in a fashion reminiscent of the spin Hall effect. The vertex correction due to impurity scattering vanishes and the effect is therefore robust against disorder. The orbital Hall effect can lead to the accumulation of local orbital momentum at the edge of the sample, and can be detected by the Kerr effect.

  11. Formation mechanism of a silicon carbide coating for a reinforced carbon-carbon composite

    NASA Technical Reports Server (NTRS)

    Rogers, D. C.; Shuford, D. M.; Mueller, J. I.

    1975-01-01

    Results are presented for a study to determine the mechanisms involved in a high-temperature pack cementation process which provides a silicon carbide coating on a carbon-carbon composite. The process and materials used are physically and chemically analyzed. Possible reactions are evaluated using the results of these analytical data. The coating is believed to develop in two stages. The first is a liquid controlled phase process in which silicon carbide is formed due to reactions between molten silicon metal and the carbon. The second stage is a vapor transport controlled reaction in which silicon vapors react with the carbon. There is very little volume change associated with the coating process. The original thickness changes by less than 0.7%. This indicates that the coating process is one of reactive penetration. The coating thickness can be increased or decreased by varying the furnace cycle process time and/or temperature to provide a wide range of coating thicknesses.

  12. A Paleogene Silicon Stable Isotope Record: Long-Term Carbon and Silicon Cycling Interaction Revealed By Sponges and Radiolarians

    NASA Astrophysics Data System (ADS)

    Fontorbe, G.; De La Rocha, C. L.; Hendry, K. R.; Frings, P.; Conley, D. J.

    2014-12-01

    Silicon and carbon cycling are related both on short time scales via the uptake of carbon dioxide and dissolved silica (DSi) by diatoms, and on geological time scales via weathering of silicate rocks consuming carbon dioxide. Long-term changes in oceanic silicon cycling and DSi concentration have been mostly attributed to the evolution of siliceous organisms, especially the colonization of the surface waters by diatoms and their diversification. Thus, impacts of geological mechanisms and changes in carbon cycling have been, in our opinion, overlooked. During the past decade, progress has been made in using silicon isotopes in marine archives to investigate the paleo-silicon cycle. Silicon isotope fractionation in siliceous sponges is closely related to ambient DSi concentration. It follows from this relationship that sponge spicules from marine sediment cores provide a good proxy for reconstructing the paleo-DSi concentration and isotopic composition. The Paleogene period (65.5 to 23Ma) is highly relevant for studying the long-term silicon and carbon cycling relationship due to radiance of diatoms, high variability in the carbon cycle and initiation of the Himalayan orogeny. Here, we will present a sponge spicules and radiolarian silicon isotopes record from ODP Leg 171B (Blake Nose, Western North Atlantic) spanning most of the Paleogene. Our data show similar patterns in both foraminiferal carbon and spicule silicon stable isotopes, providing information on the mechanisms coupling the long-term silicon and carbon cycle.

  13. Lightweight Ceramic Composition of Carbon Silicon Oxygen and Boron

    NASA Technical Reports Server (NTRS)

    Leiser, Daniel B. (Inventor); Hsu, Ming-Ta (Inventor); Chen, Timothy S. (Inventor)

    1997-01-01

    Lightweight, monolithic ceramics resistant to oxidation in air at high temperatures are made by impregnating a porous carbon preform with a sol which contains a mixture of tetraethoxysilane, dimethyldiethoxysilane and trimethyl borate. The sol is gelled and dried on the carbon preform to form a ceramic precursor. The precursor is pyrolyzed in an inert atmosphere to form the ceramic which is made of carbon, silicon, oxygen and boron. The carbon of the preform reacts with the dried gel during the pyrolysis to form a component of the resulting ceramic. The ceramic is of the same size, shape and form as the carbon precursor. Thus, using a porous, fibrous carbon precursor, such as a carbon felt, results in a porous, fibrous ceramic. Ceramics of the invention are useful as lightweight tiles for a reentry spacecraft.

  14. Angular and local spectroscopic analysis to probe the vertical alignment of N-doped well-separated carbon nanotubes.

    PubMed

    Minea, T M; Bouchet-Fabre, B; Lazar, S; Point, S; Zandbergen, H W

    2006-08-17

    Vertically aligned well-separated N-doped multiwalled carbon nanotubes (CNTs) were grown on a silicon substrate by plasma enhanced chemical vapor deposition (PECVD). Angular near-edge X-ray absorption fine structure (NEXAFS) was used to investigate the vertical alignment of as-grown CNTs. In addition, both individual tubes and tube bundles were characterized by high-resolution electron energy loss spectroscopy (HREELS). Simultaneous analysis of both spectroscopic techniques provides information on chemical environment, orbital orientation between carbon and heteroatoms, and local curvature effects. We demonstrate the utility of NEXAFS as an in situ probe of CNTs. PMID:16898707

  15. Imaging doped silicon test structures using low energy electron microscopy.

    SciTech Connect

    Nakakura, Craig Yoshimi; Anderson, Meredith Lynn; Kellogg, Gary Lee

    2010-01-01

    This document is the final SAND Report for the LDRD Project 105877 - 'Novel Diagnostic for Advanced Measurements of Semiconductor Devices Exposed to Adverse Environments' - funded through the Nanoscience to Microsystems investment area. Along with the continuous decrease in the feature size of semiconductor device structures comes a growing need for inspection tools with high spatial resolution and high sample throughput. Ideally, such tools should be able to characterize both the surface morphology and local conductivity associated with the structures. The imaging capabilities and wide availability of scanning electron microscopes (SEMs) make them an obvious choice for imaging device structures. Dopant contrast from pn junctions using secondary electrons in the SEM was first reported in 1967 and more recently starting in the mid-1990s. However, the serial acquisition process associated with scanning techniques places limits on the sample throughput. Significantly improved throughput is possible with the use of a parallel imaging scheme such as that found in photoelectron emission microscopy (PEEM) and low energy electron microscopy (LEEM). The application of PEEM and LEEM to device structures relies on contrast mechanisms that distinguish differences in dopant type and concentration. Interestingly, one of the first applications of PEEM was a study of the doping of semiconductors, which showed that the PEEM contrast was very sensitive to the doping level and that dopant concentrations as low as 10{sup 16} cm{sup -3} could be detected. More recent PEEM investigations of Schottky contacts were reported in the late 1990s by Giesen et al., followed by a series of papers in the early 2000s addressing doping contrast in PEEM by Ballarotto and co-workers and Frank and co-workers. In contrast to PEEM, comparatively little has been done to identify contrast mechanisms and assess the capabilities of LEEM for imaging semiconductor device strictures. The one exception is the

  16. Thermoelectric properties of heavily boron- and phosphorus-doped silicon

    NASA Astrophysics Data System (ADS)

    Ohishi, Yuji; Xie, Jun; Miyazaki, Yoshinobu; Aikebaier, Yusufu; Muta, Hiroaki; Kurosaki, Ken; Yamanaka, Shinsuke; Uchida, Noriyuki; Tada, Tetsuya

    2015-07-01

    In recent years, nanostructured thermoelectric materials have attracted much attention. However, despite this increasing attention, available information on the thermoelectric properties of single-crystal Si is quite limited, especially for high doping concentrations at high temperatures. In this study, the thermoelectric properties of heavily doped (1018-1020 cm-3) n- and p-type single-crystal Si were studied from room temperature to above 1000 K. The figures of merit, ZT, were calculated from the measured data of electrical conductivity, Seebeck coefficient, and thermal conductivity. The maximum ZT values were 0.015 for n-type and 0.008 for p-type Si at room temperature. To better understand the carrier and phonon transport and to predict the thermoelectric properties of Si, we have developed a simple theoretical model based on the Boltzmann transport equation with the relaxation-time approximation.

  17. Method of making highly porous, stable aluminum oxides doped with silicon

    DOEpatents

    Khosravi-Mardkhe, Maryam; Woodfield, Brian F.; Bartholomew, Calvin H.; Huang, Baiyu

    2016-03-22

    The present invention relates to a method for making high surface area and large pore volume thermally stable silica-doped alumina (aluminum oxide) catalyst support and ceramic materials. The ability of the silica-alumina to withstand high temperatures in presence or absence of water and prevent sintering allows it to maintain good activity over a long period of time in catalytic reactions. The method of preparing such materials includes adding organic silicon reagents to an organic aluminum salt such as an alkoxide in a controlled quantity as a doping agent in a solid state, solvent deficient reaction followed by calcination. Alternatively, the organic silicon compound may be added after calcination of the alumina, followed by another calcination step. This method is inexpensive and simple. The alumina catalyst support material prepared by the subject method maintains high pore volumes, pore diameters and surface areas at very high temperatures and in the presence of steam.

  18. Low resistivity, super-saturation phosphorus-in-silicon monolayer doping

    NASA Astrophysics Data System (ADS)

    McKibbin, S. R.; Polley, C. M.; Scappucci, G.; Keizer, J. G.; Simmons, M. Y.

    2014-03-01

    We develop a super-saturation technique to extend the previously established doping density limit for ultra-high vacuum monolayer doping of silicon with phosphorus. Through an optimized sequence of PH3 dosing and annealing of the silicon surface, we demonstrate a 2D free carrier density of ns = (3.6 ± 0.1) × 1014 cm-2, ˜50% higher than previously reported values. We perform extensive characterization of the dopant layer resistivity, including room temperature depth-dependent in situ four point probe measurements. The dopant layers remain conductive at less than 1 nm from the sample surface and importantly, surpass the semiconductor industry target for ultra-shallow junction scaling of <900 Ω◻-1 at a depth of 7 nm.

  19. Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor); Terhune, Robert W. (Inventor); Hecht, Michael H. (Inventor)

    1994-01-01

    The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

  20. Doping of Silicon Quantum Dots Embedded in Nitride Matrix for All-Silicon Tandem Cells

    NASA Astrophysics Data System (ADS)

    Huang, Shujuan; So, Yong Heng; Conibeer, Gavin; Green, Martin

    2012-10-01

    Boron (B)- and antimony (Sb)-doped Si quantum dots (QDs) in Si3N4 films were fabricated using the co-sputtering method with a post-deposition anneal. The effect of B and Sb on Si QDs films was investigated in terms of structural, optical and electrical properties. It is found that a low dopant concentration induced negligible structural changes in the Si QD films. The PL intensity decreases with increasing B or Sb content. This could result from the non-radiative recombination processes attributed to defects associated with the dopants and Auger processes due to successful doping of Si QDs. For the B-doped sample the conductivity increases about 100 times, which could be attributed to an increase in carrier concentration. For the Sb-doped sample, a significant increase (six orders of magnitude) in conductivity suggests an effective Sb doping. The charge transport mechanism in the Sb-doped Si QD films matches well with the percolation-hopping model in low temperature region. Both B- and Sb-doped samples show thermally activated hopping conduction characteristics in the range of 220-320 K.

  1. Stable doping of carbon nanotubes via molecular self assembly

    SciTech Connect

    Lee, B.; Chen, Y.; Podzorov, V.; Cook, A.; Zakhidov, A.

    2014-10-14

    We report a novel method for stable doping of carbon nanotubes (CNT) based on methods of molecular self assembly. A conformal growth of a self-assembled monolayer of fluoroalkyl trichloro-silane (FTS) at CNT surfaces results in a strong increase of the sheet conductivity of CNT electrodes by 60–300%, depending on the CNT chirality and composition. The charge carrier mobility of undoped partially aligned CNT films was independently estimated in a field-effect transistor geometry (~100 cm²V⁻¹s⁻¹). The hole density induced by the FTS monolayer in CNT sheets is estimated to be ~1.8 ×10¹⁴cm⁻². We also show that FTS doping of CNT anodes greatly improves the performance of organic solar cells. This large and stable doping effect, easily achieved in large-area samples, makes this approach very attractive for applications of CNTs in transparent and flexible electronics.

  2. Migration of excited charge carriers in arrays of phosphorus-doped silicon nanocrystals

    SciTech Connect

    Belyakov, V. A. Konakov, A. A.; Burdov, V. A.

    2010-11-15

    The rate of tunnel migration of excited charge carriers (electrons and holes) in the array of silicon nanocrystals doped with phosphorus is calculated. It is shown that, starting from certain phosphorus concentrations dependent on the relation between the dimensions of the emitting and accepting nanocrystals, the rate of tunneling of electrons sharply decreases (by several orders of magnitude) and becomes lower than the rate of interband radiative recombination

  3. Heteroatom-doped highly porous carbon from human urine

    PubMed Central

    Chaudhari, Nitin Kaduba; Song, Min Young; Yu, Jong-Sung

    2014-01-01

    Human urine, otherwise potentially polluting waste, is an universal unused resource in organic form disposed by the human body. We present for the first time “proof of concept” of a convenient, perhaps economically beneficial, and innovative template-free route to synthesize highly porous carbon containing heteroatoms such as N, S, Si, and P from human urine waste as a single precursor for carbon and multiple heteroatoms. High porosity is created through removal of inherently-present salt particles in as-prepared “Urine Carbon” (URC), and multiple heteroatoms are naturally doped into the carbon, making it unnecessary to employ troublesome expensive pore-generating templates as well as extra costly heteroatom-containing organic precursors. Additionally, isolation of rock salts is an extra bonus of present work. The technique is simple, but successful, offering naturally doped conductive hierarchical porous URC, which leads to superior electrocatalytic ORR activity comparable to state of the art Pt/C catalyst along with much improved durability and methanol tolerance, demonstrating that the URC can be a promising alternative to costly Pt-based electrocatalyst for ORR. The ORR activity can be addressed in terms of heteroatom doping, surface properties and electrical conductivity of the carbon framework. PMID:24909133

  4. Enhanced solar energy conversion in Au-doped, single-wall carbon nanotube-Si heterojunction cells

    PubMed Central

    2013-01-01

    The power conversion efficiency (PCE) of single-wall carbon nanotube (SCNT)/n-type crystalline silicon heterojunction photovoltaic devices is significantly improved by Au doping. It is found that the overall PCE was significantly increased to threefold. The efficiency enhancement of photovoltaic devices is mainly the improved electrical conductivity of SCNT by increasing the carrier concentration and the enhancing the absorbance of active layers by Au nanoparticles. The Au doping can lead to an increase of the open circuit voltage through adjusting the Fermi level of SCNT and then enhancing the built-in potential in the SCNT/n-Si junction. This fabrication is easy, cost-effective, and easily scaled up, which demonstrates that such Au-doped SCNT/Si cells possess promising potential in energy harvesting application. PMID:23663755

  5. Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

    NASA Astrophysics Data System (ADS)

    Sermage, B.; Essa, Z.; Taleb, N.; Quillec, M.; Aubin, J.; Hartmann, J. M.; Veillerot, M.

    2016-04-01

    The electrochemical capacitance voltage technique has been used on highly boron doped SiGe and Si layers. Although the boron concentration is constant over the space charge depth, the 1/C2 versus voltage curves are not linear. They indeed present a negative curvature. This can be explained by the existence of deep acceptors which ionise under a high electric field (large inverse voltage) and not at a low inverse voltage. The measured doping concentration in the electrochemical capacitance voltage increases strongly as the inverse voltage increases. Thanks to a comparison with the boron concentration measured by secondary ions mass spectrometry, we show that the relevant doping concentrations in device layers are obtained for small inverse voltage in agreement with the existence of deep acceptors. At the large inverse voltage, the measured doping can be more than twice larger than the boron concentration measured with a secondary ion mass spectroscopy.

  6. Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layers

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Watanabe, M.; Actor, G.

    1977-01-01

    Quantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.

  7. Ga-doped ZnO conducting antireflection coatings for crystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Estrich, N. A.; Hook, D. H.; Smith, A. N.; Leonard, J. T.; Laughlin, B.; Maria, J.-P.

    2013-06-01

    Transparent, conductive gallium-doped ZnO thin films are evaluated for application as conducting antireflection coatings (ARC) for crystalline silicon solar cells as a means to enhance efficiency by reducing the overall resistivity of the photovoltaic circuit. All Ga-doped ZnO thin films in this study were deposited using pulsed laser deposition. Synthesis conditions were first optimized for maximum electrical resistivity and minimal visible light absorption. The ideal combination contained 1 mol. % Ga doping and exhibited ˜90% transmission, with resistivity in the 1 × 10-3 ohm-cm range. Optimized films were prepared on reference flat silicon wafers with known dopant densities and on commercially obtained solar cell emitters without ARCs. Circular transmission line method measurements were used to measure specific contact resistivity (ρc). For n-type doped solar cell emitters, contact resistivity values of 0.1 mΩ cm2 were observed repeatedly. These values are consistent with, or lower than, contact resistivities associated with conventional silver paste metallization.

  8. Photoluminescence of monocrystalline and stain-etched porous silicon doped with high temperature annealed europium

    NASA Astrophysics Data System (ADS)

    Guerrero-Lemus, R.; Montesdeoca-Santana, A.; González-Díaz, B.; Díaz-Herrera, B.; Velázquez, J. J.; Hernández-Rodríguez, C.; Jiménez-Rodríguez, E.

    2011-08-01

    In this work, for the first time, the photoluminescent emission and excitation spectra of non-textured layers and stain-etched porous silicon layers (PSLs) doped with high temperature annealed europium (Eu) are evaluated. The PSLs are evaluated as a host for rare earth ions and as an antireflection coating. The applied doping process, which consists in a simple impregnation method followed by a high-temperature annealing step, is compatible with the standard processes in the fabrication of solar cells. The results show down-shifting processes with a maximum photoluminescent intensity at 615 nm, related to the transition 5D0 → 7F2. Different initial concentrations of Eu(NO3)3 are evaluated to study the influence of the rare earth concentration on the photoluminescent intensity. The chemical composition and the morphology of Eu-doped PSLs are examined by means of x-ray dispersion spectroscopy, Fourier-transform infrared spectroscopy and scanning electron microscopy. These Eu-doped layers are considered to be applied as energy converters in silicon-based third generation solar cells.

  9. Lithium Ion Battery Performance of Silicon Nanowires With Carbon Skin

    SciTech Connect

    Bogart, Timothy D.; Oka, Daichi; Lu, Xiaotang; Gu, Meng; Wang, Chong M.; Korgel, Brian A.

    2013-12-06

    Silicon (Si) nanomaterials have emerged as a leading candidate for next generation lithium-ion battery anodes. However, the low electrical conductivity of Si requires the use of conductive additives in the anode film. Here we report a solution-based synthesis of Si nanowires with a conductive carbon skin. Without any conductive additive, the Si nanowire electrodes exhibited capacities of over 2000 mA h g-1 for 100 cycles when cycled at C/10 and over 1200 mA h g-1 when cycled more rapidly at 1C against Li metal.. In situ transmission electron microscopy (TEM) observation reveals that the carbon skin performs dual roles: it speeds lithiation of the Si nanowires significantly, while also constraining the final volume expansion. The present work sheds light on ways to optimize lithium battery performance by smartly tailoring the nanostructure of composition of materials based on silicon and carbon.

  10. Nissin Ion Doping System--H{sub 2}{sup +} Implantation for Silicon Layer Exfoliation

    SciTech Connect

    Cherekdjian, S.; Maschmeyer, R. O.; Cites, J.; Tatemichi, J.; Inouchi, Y.; Onoda, M.; Orihira, K.; Matsumoto, T.; Konishi, M.; Naito, M.

    2011-01-07

    A Nissin iG4 ion doping system (termed iG4) utilizes broad beam technology to implant GEN 4 sheets of glass for LCD production. The mechanical scanned end-station with robotic handling for GEN 4 glass substrates was redesigned, and a new end-station was built to handle rectangular silicon tiles (23x18 cm). A three sub-system modular risk reduction process was used to test production solutions, and maximize the success of transferring the R and D implant recipes developed on a standard focused beam ion implanter to the Nissin broad beam iG4 solution. The silicon tile end-station including the implant scanning system was tested for reliability and durability. The end-station handled rectangular silicon tiles reliably without detrimental edge chipping or silicon breakage. The ion optics was demonstrated to successfully provide stable hydrogen ions for the Corning registered silicon on glass layer transfer process. This layer transfer process is very susceptible and sensitive to the implant processing temperature. The temperature excursions during implant processing for the iG4 exfoliation process were found to be in line with the R and D focused ion beam system. This data confirmed the system production-readiness in providing an efficient solution for the high volume production of hydrogen implanted silicon rectangular tiles.