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Sample records for cdte cdznte detectors

  1. High performance p-i-n CdTe and CdZnTe detectors

    NASA Astrophysics Data System (ADS)

    Khusainov, A. Kh; Dudin, A. L.; Ilves, A. G.; Morozov, V. F.; Pustovoit, A. K.; Arlt, R. D.

    1999-06-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35°C cooling (by a Peltier cooler of 15×15×10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  2. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    PubMed Central

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

  3. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    NASA Astrophysics Data System (ADS)

    Eisen, Y.; Shor, A.; Mardor, I.

    1999-06-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems.

  4. CdTe and CdZnTe materials for room-temperature X-ray and gamma ray detectors

    NASA Astrophysics Data System (ADS)

    Eisen, Y.; Shor, A.

    1998-02-01

    Among the semiconductor materials of a wide band gap, CdTe and CdZnTe have attracted most attention as room-temperature X-ray and gamma-ray detectors. Suitable CdTe materials for nuclear detectors and, in particular, for spectrometers, have been developed over the past few decades and are mainly grown via the traveling heater method (THM). However, the manufacture of large homogeneous ingots at relatively low cost has not reached yet a proven stage. Cd 1- xZn xTe (CZT) materials, mainly grown via the high-pressure Bridgman (HPB) technique, possess several advantages over CdTe and appear to better approach the practicality of providing large volume X-ray and gamma-ray detectors at moderate costs. Continuing effort is still underway to improve the characteristics of both CdTe and CZT materials in order to achieve reproducible detectors for either low- and high-energy gamma rays. This review paper is divided into three parts: The first part describes different structural designs of detectors to improve their spectroscopic characteristics. These include hemispherical detectors, coplanar strip-electrode detectors and monolithic, two-dimensional segmented electrode arrays with pad sizes smaller than their thickness. This part will also describe various electronic methods to compensate for the poor charge collection of holes. The second part compares the characteristics of planar CdTe and CZT nuclear detectors containing metal contacts. Characteristics include: charge collection efficiencies for both electrons and holes indicated by the mobility-lifetime product, energy resolutions, leakage currents and robustness in field use. The third part is devoted to field uses of these detectors. Those include: X-ray fluorescent spectrometers, large volume spectrometers and a new generation nuclear gamma camera for medical diagnostics based on room-temperature solid-state spectrometers.

  5. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    PubMed Central

    Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

    2014-01-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  6. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    NASA Astrophysics Data System (ADS)

    Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

    2015-06-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  7. Concentration of uncompensated impurities as a key parameter of CdTe and CdZnTe crystals for Schottky diode x\\ssty{/}γ-ray detectors

    NASA Astrophysics Data System (ADS)

    Kosyachenko, L. A.; Lambropoulos, C. P.; Aoki, T.; Dieguez, E.; Fiederle, M.; Loukas, D.; Sklyarchuk, O. V.; Maslyanchuk, O. L.; Grushko, E. V.; Sklyarchuk, V. M.; Crocco, J.; Bensalah, H.

    2012-01-01

    In this paper we report on the strong impact of the concentration of uncompensated impurities on the detection efficiency of CdTe and Cd0.9Zn0.1Te Schottky diodes. The results of our study explain the observed poor detection properties of some Cd0.9Zn0.1Te detectors with resistivity and lifetime of carriers comparable to those of good CdTe detectors. We show that the concentration of uncompensated impurities in a highly efficient CdTe Schottky diode detector is several orders of magnitude higher than that of a CdZnTe, which does not register the gamma spectra of commonly used isotopes (59-662 keV) by using photoelectric measurements. The significant difference of the concentration of uncompensated impurities between CdTe and Cd0.9Zn0.1Te crystals is confirmed by our study of the temperature change of the resistivity and of the Fermi level energy. The degree of compensation of the donor complex, responsible for the electrical conductivity of the material, is much lower in the CdTe crystal compared to that in the Cd0.9Zn0.1Te crystal. The calculations of the detection efficiency of x/γ-radiation by a Schottky diode result in a dependence on the concentration of uncompensated impurities described by a curve with a pronounced maximum. The position of this maximum occurs at a concentration of uncompensated impurities which ranges from 3 × 1010 to 3 × 1012 cm-3 depending on the registered photon energy of x/γ-rays and on the lifetime of the charge carriers. Our measurements and calculations lead to the conclusion that the concentration of uncompensated impurities in this range is a necessary condition for the effective operation of x- and γ-ray Schottky diode detectors based on CdTe and Cd1-xZnxTe crystals.

  8. Characterization of CdTe and CdZnTe detectors for gamma-ray imaging applications

    NASA Astrophysics Data System (ADS)

    Verger, L.; Boitel, M.; Gentet, M. C.; Hamelin, R.; Mestais, C.; Mongellaz, F.; Rustique, J.; Sanchez, G.

    2001-02-01

    CEA-LETI in association with Bicron and Crismatec has been developing solid-state gamma camera technology based on CZT. The project included gamma camera head systems development including front-end electronics with an integrated circuit (ASIC), material growth, and detector fabrication and characterization. One feature of the work is the use of linear correlation between the amplitude and the fast rise time of the signal - which corresponds to the electron transit time in the detector, a development that was reported previously and which allows more than 80% of the 122 keV γ-photons incident on HPBM material to be recovered in a ±6.5% 2D window. In the current work, we summarize other methods to improve CZT detector performance and compare them with the Bi-Parametric Spectrum (BPS) method. The BPS method can also be applied as a diagnositic. BPS curve shapes are shown to vary with electric field, and with electron transport properties, and the correction algorithims are seen to be robust over a range of values. In addition, the technique is found to improve detectors from a variety of sources including some with special electrode geometries. In all cases, the BPS method improves efficiency (>75%) without degrading energy resolution (± 6.5% 2D window) even for a monolithic detector. The method does not overcome bulk inhomogeneity nor noise which comes from low resistivity.

  9. PERFORMANCE-LIMITING DEFECTS IN CDZNTE DETECTORS.

    SciTech Connect

    BOLOTNIKOV, A.E.; CAMARDA, G.S.; CUI, Y.; KOHMAN, K.T.; LI, L.; SALOMON, M.B.; JAMES, R.B.

    2006-10-29

    We studied the effects of small, <20 {micro}m, Te inclusions on the energy resolution of CdZnTe gamma-ray detectors using a highly collimated X-ray beam and gamma-rays, and modeled them via a simplified geometrical approach. Previous reports demonstrated that Te inclusions of about a few microns in diameter degraded the charge-transport properties and uniformity of CdZnTe detectors. The goal of this work was to understand the extent to which randomly distributed Te-rich inclusions affect the energy resolution of CZT detectors, and to define new steps to overcome their deleterious effects. We used a phenomenological model, which depends on several adjustable parameters, to reproduce the experimentally measured effects of inclusions on energy resolution. We also were able to hound the materials-related problem and predict the enhancement in performance expected by reducing the size and number of Te inclusions within the crystals.

  10. CdZnTe technology for gamma ray detectors

    NASA Astrophysics Data System (ADS)

    Stahle, Carl; Shi, Jack; Shu, Peter; Barthelmy, Scott; Parsons, Ann; Snodgrass, Steve

    1998-01-01

    CdZnTe detector technology has been developed at NASA Goddard for imaging and spectroscopy applications in hard x-ray and gamma ray astronomy. A CdZnTe strip detector array with capabilities for arc second imaging and spectroscopy has been built as a prototype for a space flight gamma ray burst instrument. CdZnTe detectors also have applications for medical imaging, environmental protection, transportation safety, nuclear safeguards and safety, nuclear non-proliferation, and national security. This can be accomplished from space and also from portable detectors on earth. One of the great advantages of CdZnTe is that the detectors can be operated at room temperature which eliminates the need for cryogenic cooling. CdZnTe detectors have good energy resolution (3.6 keV at 60 keV) and excellent spatial resolution (<100 microns). NASA Goddard has developed the fabrication technology to make a variery of planar, strip, and pixel detectors and integrated these detectors to high density electronics. We have built a 2×2 and a large area (60 cm2, 36 detectors) 6×6 strip detector array. This paper will summarize the CdZnTe detector fabrication and packaging technology developed at Goddard.

  11. A Research on CdZnTe Array Detector

    NASA Astrophysics Data System (ADS)

    Cai, M. S.; Guo, J. H.; Xie, M. G.; Zheng, C. X.

    2013-09-01

    The CdZnTe array detector is a new type of semiconductor detector, and it has been developing rapidly in recent years. It has some characteristics of high spatial resolution, high energy resolution, and it can work at room temperature. This article describes the physical characteristics and the working principle of the CdZnTe detector. It also introduces the production process of the CdZnTe array detector, including the pretreatment of the chips, passivation, ohmic electrode production, array template selection, and array package process selection (micro-interconnect). For evaluating the performance of the detector, the authors produced a 4 pixel × 4 pixel CdZnTe array and an 8 pixel × 8 pixel CdZnTe array (The thicknesses are 5 mm and 2 mm, respectively.The pixel size is 2 mm × 2 mm. The gaps are 0.15 mm and 0.2 mm, respectively.) with cooperation partner successfully. A multi-channel electronic readout system based on the ASIC (Application Specific Integrated Circuit) chip is used for the charge measurement of the 4 pixel × 4 pixel array of CdZnTe. The 16-pixel spectrum and the corresponding energy resolution are obtained with the ^{137}Cs radiation source. Among the results of each pixel, the best resolution is 4.8%@662 keV.

  12. A Study on the CdZnTe Array Detector

    NASA Astrophysics Data System (ADS)

    Cai, Ming-sheng; Guo, Jian-hua; Xie, Ming-gang; Zheng, Chun-xiao

    2014-04-01

    The CdZnTe array detector is a new type of semiconductor detector being rapidly developed in recent years. It possesses a high spatial resolution and a high energy resolution, and it can work at room temperatures. This paper describes the physical properties and working principle of the CdZnTe array detector, as well as the manufacturing technology, including the chip pretreatment, passivation, ohmic electrode preparation, array template selection, and array packaging technology (micro-interconnection). For evaluating the perfor-mance of the detector, the authors have developed successfully a 4 pixel×4 pixel CdZnTe array and an 8 pixel×8 pixel CdZnTe array (with the thicknesses of 5 mm and 2 mm, the pixel size of 2 mm×2 mm, and the gaps of 0.15 mm and 0.2 mm, respectively) in cooperation with the partner. A multi-channel electronic readout system based on the ASIC (Application Specific Integrated Circuit) chip is devel-oped independently for the charge measurement of the 4 pixel×4 pixel CdZnTe array. The energy spectra and corresponding energy resolutions of the 16 pixels are obtained with the 137Cs radiative source, among them the best resolution is 4.8%@662 kev.

  13. Characterization of CdTe, (Cd,Zn)Te, and Cd(Te,Se) single crystals by transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Rai, R. S.; Mahajan, S.; McDevitt, S.; Johnson, C. J.

    1991-10-01

    CdTe, (Cd,Zn)Te, and Cd(Te,Se) crystals grown by the Bridgman technique have been characterized by transmission electron microscopy. Results indicate that the Te precipitates are seen in all the crystals, but their density and size are lowest and largest in the case of Cd(Te,Se) crystals. In addition, dislocations, stacking faults, and microtwins are observed in as-grown CdTe, (Cd,Zn)Te, and Cd(Te,Se) crystals. Arguments have been developed to rationalize these observations and their ramifications on crystal perfection are discussed.

  14. ATMOSPHERIC EFFECTS ON THE PERFORMANCE OF CDZNTE SINGLE CRYSTAL DETECTORS

    SciTech Connect

    Washington, A.; Duff, M.; Teague, L.

    2010-05-12

    The production of high-quality ternary single-crystal materials for radiation detectors has progressed over the past 15 years. One of the more common materials being studied is CdZnTe (CZT), which can be grown using several methods to produce detector-grade materials. The work presented herein examines the effects of environmental conditions including temperature and humidity on detector performance [full-width at half-maximum (FWHM)] using the single pixel with guard detector configuration. The effects of electrical probe placement, reproducibility, and aging are also presented.

  15. Gamma spectrometric characterization of short cooling time nuclear spent fuels using hemispheric CdZnTe detectors

    NASA Astrophysics Data System (ADS)

    Lebrun, A.; Bignan, G.; Szabo, J. L.; Arenas-Carrasco, J.; Arlt, R.; Dubreuil, A.; Esmailpur Kazerouni, K.

    2000-07-01

    After years of cooling, nuclear spent fuel gamma emissions are mainly due to caesium isotopes which are emitters at 605, 662 and 796-801 keV. Extensive work has been done on such fuels using various CdTe or CdZnTe probes. When fuels have to be measured after short cooling time (during NPP outage) the spectrum is much more complex due to the important contributions of niobium and zirconium in the 700 keV range. For the first time in a nuclear power plant, four spent fuels of the Kozloduy VVER reactor no 4 were measured during outage, 37 days after shutdown of the reactor. In such conditions, good resolution is of particular interest, so a 20 mm 3 hemispheric crystal was used with a resolution better than 7 keV at 662 keV. This paper presents the experimental device and analyzes the results which show that CdZnTe commercially available detectors enabled us to perform a semi-quantitative determination of the burn-up after a short cooling time. In addition, it is discussed how a burn-up evolution code (CESAR) coupled to a gamma transport code (MCNP) allows us to predict and interpret the experimental data from CdZnTe detectors. Particularly, bremsstrahlung contribution to the gamma spectra is suggested and modeled. Calculation results indicate a good agreement between this hypothesis and the present measurements.

  16. READOUT SYSTEM FOR ARRAYS OF FRISCH-RING CDZNTE DETECTORS.

    SciTech Connect

    CUI, Y.; BOLOTNIKOV, A.E.; CAMARDA, G.S.; DE GERONIMO, G.; O'CONNOR, P.; JAMES, R.B.; KARGAR, A.; HARRISON, M.J.; MCGREGOR, D.S.

    2006-10-29

    Frisch-ring CdZnTe detectors have demonstrated good energy resolution for identifying isotopes, <1% FWHM at 662 keV, and good efficiency for detecting gamma rays. We will fabricate and test at Brookhaven National Laboratory an integrated module of a 64-element array of 6 x 6 x 12 mm{sup 3} Frisch-ring detectors, coupled with a readout electronics system. It supports 64 readout channels, and includes front-end electronics, signal processing circuit, USB interface and high-voltage power supply. The data-acquisition software is used to process the data stream, which includes amplitude and timing information for each detected event. This paper describes the design and assembly of the detector modules, readout electronics, and a conceptual prototype system. Some test results are also reported.

  17. EFFECT OF TE PRECIPITATES ON THE PERFORMANCE OF CDZNTE DETECTORS.

    SciTech Connect

    CARINI, G.A.; BOLOTNIKOV, A.E.; CAMARDA, G.S.; WRIGHT, G.W.; LI, L.; JAMES, R.B.

    2005-09-20

    A recent study of long-drift CdZnTe (CZT) Frisch-ring detectors showed that fluctuations of the collected charge (and device response) depend on the device dimensions and the concentration of Te precipitates in the material. This observation, which could be explained as the cumulative effect of precipitates, led to the investigation of thin (1 mm) planar detectors, where the effects of precipitates can be more clearly ascertained. To perform the investigation, a measurement facility was developed that allowed for high-resolution spatial mapping of the performance of CZT devices. New measurements emerging from this facility provided the first detailed comparisons of the micro-scale X-ray maps and infrared microscopy images for thin CZT samples. Analysis of the data showed conclusively that local deteriorations of device response fully correlate with Te precipitates seen in the IR images. Effects of surface processing conditions on the detector response were also clearly observed.

  18. CHARACTERIZATION OF DETECTOR GRADE CDZNTE MATERIAL FROM REDLEN TECHNOLOGIES

    SciTech Connect

    Duff, M

    2008-07-09

    CdZnTe (or CZT) crystals can be used in a variety of detector-type applications. This large band gap material shows great promise for use as a gamma radiation spectrometer. Historically, the performance of CZT has typically been adversely affected by point defects, structural and compositional heterogeneities within the crystals, such as twinning, pipes, grain boundaries (polycrystallinity) and secondary phases (SP). The synthesis of CZT material has improved greatly with the primary performance limitation being attributed to mainly SP. In this presentation, we describe the extensive characterization of detector grade material that has been treated with post growth annealing to remove the SPs. Some of the analytical methods used in this study included polarized, cross polarized and transmission IR imaging, I-V curves measurements, synchrotron X-ray topography and electron microscopy.

  19. Development of CdZnTe radiation detectors

    NASA Astrophysics Data System (ADS)

    Bolotnikov, Aleksey; Camarda, Giuseppe; Hossain, Anwar; Kim, Ki Hyun; Yang, Ge; Gul, Rubi; Cui, Yonggang; James, Ralph B.

    2011-08-01

    Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the efforts developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection- topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

  20. Charge transport properties in CdZnTe detectors grown by the vertical Bridgman technique

    SciTech Connect

    Auricchio, N.; Caroli, E.; Abbene, L.; Honkimaki, V.

    2011-12-15

    Presently, a great amount of effort is being devoted to the development of CdTe and CdZnTe (CZT) detectors for a large variety of applications such as medical, industrial, and space research. We present the spectroscopic properties of some CZT crystals grown by the standard vertical Bridgman method and by the boron oxide encapsulated vertical Bridgman method, which has been recently implemented at IMEM-CNR (Parma, Italy). In this technique, the crystal is grown in an open quartz crucible fully encapsulated by a thin layer of liquid boron oxide. This method prevents contact between the crystal and the crucible, thereby allowing larger single grains with a lower dislocation density to be obtained. Several mono-electrode detectors were realized, with each having two planar gold contacts. The samples are characterized by an active area of about 7 mm x 7 mm and thicknesses ranging from 1 to 2 mm. The charge transport properties of the detectors have been studied by mobility-lifetime ({mu} x {tau}) product measurements, carried out at the European Synchrotron Radiation Facility (Grenoble, France) in the planar transverse field configuration, where the impinging beam direction is orthogonal to the collecting electric field. We have performed several fine scans between the electrodes with a beam spot of 10 {mu}m x 10 {mu}m at various energies from 60 to 400 keV. In this work, we present the test results in terms of the ({mu} x {tau}) product of both charge carriers.

  1. CHARACTERIZATION OF SPATIAL HETEROGENIETIES IN DETECTOR GRADE CDZNTE

    SciTech Connect

    Duff, M

    2007-12-04

    Synthetic Cd{sub 1-x}Zn{sub x}Te or 'CZT' crystals are highly suitable for the room temperature-based spectroscopy of gamma radiation. Structural/morphological heterogeneities within CZT, such as secondary phases that are thought to consist of Te metal and have detrimental impacts on detector performance. In this study, we used electron and X-ray-based imaging techniques to examine heterogeneous properties of detector grade CZT. Using experimental analytical techniques rather than arbitrary theoretical definitions, our study identifies two dominant secondary phase morphologies. The first consists of numerous empty, 20 {micro} m wide, pyramidal bodies (tetrahedra) or 'negative' crystals with trace quantities of particulate residue that exist as 65 nm sized particles containing Si, Cd, Zn, and Te. The other consists of 20 {micro}m hexagonal-shaped bodies, which are composites of metallic Te layers that contain a teardrop-shaped core of amorphous and polycrystalline CdZnTe which finally surrounds an irregular-shaped void.

  2. Physics-based generation of gamma-ray response functions for CDZNTE detectors

    SciTech Connect

    Prettyman, T.H.; Mercer, D.J.; Cooper, C.; Russo, P.A.; Rawool-Sullivan, M.; Close, D.A.; Luke, P.N.; Amman, M.; Soldner, S.

    1997-09-01

    A physics-based approach to gamma-ray response-function generation is presented in which the response of CdZnTe detectors is modeled from first principles. Computer modeling is used to generate response functions needed for spectrum analysis for general detector configurations (e.g., electrode design, detector materials and geometry, and operating conditions). With computer modeling, requirements for calibration and characterization are significantly reduced. Elements of the physics-based model, including gamma-ray transport, charge drift-diffusion, and circuit response, are presented. Calculated and experimental gamma-ray spectra are compared for a coplanar-grid CdZnTe detector.

  3. Point Defect Properties of Cd(Zn)Te and TlBr for Room-Temperature Gamma Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Lordi, Vincenzo

    2013-03-01

    The effects of various crystal defects in CdTe, Cd1-xZnxTe (CZT), and TlBr are critical for their performance as room-temperature gamma radiation detectors. We use predictive first principles theoretical methods to provide fundamental, atomic scale understanding of the defect properties of these materials to enable design of optimal growth and processing conditions, such as doping, annealing, and stoichiometry. Several recent cases will be reviewed, including (i) accurate calculations of the thermodynamic and electronic properties of native point defects and point defect complexes in CdTe and CZT; (ii) the effects of Zn alloying on the native point defect properties of CZT; (iii) point defect diffusion and binding related to Te clustering in Cd(Zn)Te; (iv) the profound effect of native point defects--principally vacancies--on the intrinsic material properties of TlBr, particularly electronic and ionic conductivity; (v) tailored doping of TlBr to independently control the electronic and ionic conductivity; and (vi) the effects of metal impurities on the electronic properties and device performance of TlBr detectors. Prepared by LLNL under Contract DE-AC52-07NA27344 with support from the National Nuclear Security Administration Office of Nonproliferation and Verification Research and Development NA-22.

  4. Ruggedization of CdZnTe detectors and detector assemblies for radiation detection applications

    NASA Astrophysics Data System (ADS)

    Lu, P. H.; Gomolchuk, P.; Chen, H.; Beitz, D.; Grosser, A. W.

    2015-06-01

    This paper described improvements in the ruggedization of CdZnTe detectors and detector assemblies for use in radiation detection applications. Research included experimenting with various conductive and underfill adhesive material systems suitable for CZT substrates. A detector design with encapsulation patterning was developed to protect detector surfaces and to control spacing between CZT anode and PCB carrier. Robustness of bare detectors was evaluated through temperature cycling and metallization shear testing. Attachment processes using well-chosen adhesives and PCB carrier materials were optimized to improve reliability of detector assemblies, resulted in Improved Attachment Detector Assembly. These detector assemblies were subjected to aggressive temperature cycling, and varying levels of drop/shock and vibration, in accordance with modified JEDEC, ANSI and FedEx testing standards, to assess their ruggedness. Further enhanced detector assembly ruggedization methods were investigated involving adhesive conformal coating, potting and dam filling on detector assemblies, which resulted in the Enhanced Ruggedization Detector Assembly. Large numbers of CZT detectors and detector assemblies with 5 mm and 15 mm thick, over 200 in total, were tested. Their performance was evaluated by exposure to various radioactive sources using comprehensive predefined detector specifications and testing protocols. Detector assemblies from improved attachment and enhanced ruggedization showed stable performances during the harsh environmental condition tests. In conclusion, significant progress has been made in improving the reliability and enhancing the ruggedness of CZT detector assemblies for radiation detection applications deployed in operational environments.

  5. A Prototype Three-Dimensional Position Sensitive CdZnTe Detector Array

    SciTech Connect

    Zhang, Feng; He, Zhong; Seifert, Carolyn E.

    2007-08-01

    A new CdZnTe gamma-ray spectrometer system that employs two layers of modular detector arrays is being developed under the collaboration between the University of Michigan and the Pacific Northwest National Labaratory (PNNL). Each layer can accommodate up to three by three 3-dimensional position sensitive CdZnTe gamma-ray spectrometers. This array system is based on the newly developed VAS_UM/TAT4 ASIC readout electronics. Each of the nine detector modules consists of a pixellated CdZnTe detector and a VAS_UM/TAT4 ASIC frontend board. Each 1.5´1.5´1.0 cm3 CdZnTe detector employs an array of 11 by 11 pixellated anodes and a planar cathode. The energy depositions and 3-dimensional positions of individual interactions of each incident gamma ray can be obtained from pulse amplitude, location of each pixel anode and the drift time of electrons. Ten detectors were tested individually and half of them achieved resolution of <1.0% FWHM at 662 keV for single-pixel events (~30% of all 662 keV full energy deposition events). Two of them were tested in a simple array to verify that the upgrade to an array system does not sacrifice the performance of individual detectors. Experimental results of individual detectors and a twodetector array system are presented, and possible causes for several worse performing detectors are discussed.

  6. Preliminary results obtained from novel CdZnTe pad detectors

    SciTech Connect

    Tuemer, T.O.; Joyce, D.C.; Yin, S.; Willson, P.D.; Parnham, K.B.; Glick, B.

    1996-06-01

    CdZnTe pad detectors with a novel geometry and approximately 1 mm{sup 2} pad sizes are being developed. These detectors have been specially designed for high energy resolution up to 300 keV energies. The contacts are produced through a unique technique developed by eV Products to achieve high reliability low resistance coupling to the substrate. A ceramic carrier is developed for low capacitance coupling of the detectors to NOVA`s FEENA chip. The detectors have been tested using the ultra low noise single and 3-channel amplifiers developed by eV Products. The CdZnTe detectors are tested for dark current. The charge energy resolutions and collection times are also measured using natural radiation sources. The measured detector parameters and the test results are showing that linear pad arrays can have good uniformity and excellent application potential for imaging x-rays and gamma-rays.

  7. Hard x-ray response of pixellated CdZnTe detectors

    SciTech Connect

    Abbene, L.; Caccia, S.; Bertuccio, G.

    2009-06-15

    In recent years, the development of cadmium zinc telluride (CdZnTe) detectors for x-ray and gamma ray spectrometry has grown rapidly. The good room temperature performance and the high spatial resolution of pixellated CdZnTe detectors make them very attractive in space-borne x-ray astronomy, mainly as focal plane detectors for the new generation of hard x-ray focusing telescopes. In this work, we investigated on the spectroscopic performance of two pixellated CdZnTe detectors coupled with a custom low noise and low power readout application specific integrated circuit (ASIC). The detectors (10x10x1 and 10x10x2 mm{sup 3} single crystals) have an anode layout based on an array of 256 pixels with a geometric pitch of 0.5 mm. The ASIC, fabricated in 0.8 mum BiCMOS technology, is equipped with eight independent channels (preamplifier and shaper) and characterized by low power consumption (0.5 mW/channel) and low noise (150-500 electrons rms). The spectroscopic results point out the good energy resolution of both detectors at room temperature [5.8% full width at half maximum (FWHM) at 59.5 keV for the 1 mm thick detector; 5.5% FWHM at 59.5 keV for the 2 mm thick detector) and low tailing in the measured spectra, confirming the single charge carrier sensing properties of the CdZnTe detectors equipped with a pixellated anode layout. Temperature measurements show optimum performance of the system (detector and electronics) at T=10 deg.C and performance degradation at lower temperatures. The detectors and the ASIC were developed by our collaboration as two small focal plane detector prototypes for hard x-ray multilayer telescopes operating in the 20-70 keV energy range.

  8. Radiation induced polarization in CdTe detectors

    NASA Astrophysics Data System (ADS)

    Vartsky, D.; Goldberg, M.; Eisen, Y.; Shamai, Y.; Dukhan, R.; Siffert, P.; Koebel, J. M.; Regal, R.; Gerber, J.

    1988-01-01

    Polarization induced by irradiation with intense gamma ray sources has been studied in chlorine-compensated CdTe detectors. The influence of several parameters, such as applied field strength, temperature and incident photon flux, on the polarization effect have been investigated. A relationship was found between the degree of polarization, detector efficiency and detector leakage current.

  9. Interfacial Chemistry and the Performance of Bromine-etched CdZnTe Radiation Detector Devices

    SciTech Connect

    Rouse, Ambrosio A.; Szeles, Csaba; Ndap, Jean-Oliver; Soldner, Steve; Parnham, K B.; Gaspar, Dan J.; Engelhard, Mark H.; Lea, Alan S.; Shutthanandan, V; Thevuthasan, Suntharampillai; Baer, Donald R.

    2002-08-01

    The interfacial chemistry and composition of Pt electrodes sputter deposited on bromine-etched CdZnTe surfaces was studied by XPS, SIMS, AES, NRA and RBS. The interfacial composition of a functioning and a non-functioning CdZnTe detector shows significant differences. The degree of cation out-diffusion into the Pt overlayer and the in-diffusion of Pt into the CdZnTe correlate with the degree of oxidation found at the metal-semiconductor interface. Practically all the oxide present at the interface was found to be TeO{sub 2}. The results suggest that the inter-diffusion of the atoms and associated charges contribute to stoichiometric variations at the metal-semiconductor interface and influence the electrical performance of the devices.

  10. The Effect of Twin Boundaries on the Spectroscopic Performance of CdZnTe Detectors

    NASA Technical Reports Server (NTRS)

    Parker, Bradford H.; Stahle, C. M.; Roth, D.; Babu, S.; Tueller, Jack; Powers, Edward I. (Technical Monitor)

    2001-01-01

    Most single grains in cadmium zinc telluride (CdZnTe) grown by the high-pressure Bridgman (HPB) technique contain multiple twin boundaries. As a consequence, twin boundaries are one of the most common macroscopic material defects found in large area (400 to 700 sq mm) CdZnTe specimens obtained from HPB ingots. Due to the prevalence of twin boundaries, understanding their effect on detector performance is key to the material selection process. Twin boundaries in several 2 mm thick large area specimens were first, documented using infrared transmission imaging. These specimens were then fabricated into either 2 mm pixel or planar detectors in order to examine the effect of the twin boundaries on detector performance. Preliminary results show that twin boundaries, which are decorated with tellurium inclusions, produce a reduction in detector efficiency and a degradation in resolution. The extent of the degradation appears to be a function of the density of tellurium inclusions.

  11. Application of pulse-shape discrimination to coplanar CdZnTe detectors

    NASA Astrophysics Data System (ADS)

    Nakhostin, M.; Podolyak, Zs.; Sellin, P. J.

    2013-11-01

    A digital pulse-shape discrimination algorithm for the identification of multi-site γ-ray interactions in coplanar CdZnTe detectors has been developed. The algorithm is used to suppress the Compton continuum in γ-ray spectroscopy measurements by rejecting the single-site events. The results of our study with a 15×15×7.5 mm3 detector demonstrate the effectiveness of this approach for revealing low intensity γ-ray peaks in the examined energy range (511-1274 keV), which is of importance for environmental and security applications. The method is also very useful for background reduction in the neutrinoless double beta-decay experiments for which coplanar CdZnTe detectors are of interest.

  12. De-polarization of a CdZnTe radiation detector by pulsed infrared light

    SciTech Connect

    Dědič, V. Franc, J.; Rejhon, M.; Grill, R.; Zázvorka, J.; Sellin, P. J.

    2015-07-20

    This work is focused on a detailed study of pulsed mode infrared light induced depolarization of CdZnTe detectors operating at high photon fluxes. This depolarizing effect is a result of the decrease of positive space charge that is caused by the trapping of photogenerated holes at a deep level. The reduction in positive space charge is due to the optical transition of electrons from a valence band to the deep level due to additional infrared illumination. In this paper, we present the results of pulse mode infrared depolarization, by which it is possible to keep the detector in the depolarized state during its operation. The demonstrated mechanism represents a promising way to increase the charge collection efficiency of CdZnTe X-ray detectors operating at high photon fluxes.

  13. Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

    NASA Technical Reports Server (NTRS)

    Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

    1998-01-01

    The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

  14. Performance updating of CdZnTe strip-drift detectors

    NASA Astrophysics Data System (ADS)

    Shorohov, M.; Tsirkunova, I.; Loupilov, A.; Gostilo, V.; Budtz-Jørgensen, C.; Kuvvetli, I.

    2007-06-01

    Efficiency of strip-drift structure of contacts for improvement of charge collection conditions in CdZnTe detectors was shown some years ago. For such detector with area 10×10 mm 2 and thickness 3 mm of crystal, produced by eV products we obtained energy resolution 1.9 and 12.0 keV on energies 59.6 and 662 keV correspondingly. Recently, significant progress was done in CdZnTe crystals growth technology. In the present paper we present preliminary result of performance updating of CdZnTe strip-drift detectors based on crystal of 10×10×6 mm 3 produced by Yinnel Tech company. Results of crystal input characterization, the value of leakage current and inter-strip resistivity for all strips and energy resolution for collecting strips of detector are presented. The energy resolutions 1.8 and 11.0 keV on energies 59.6 and 662 keV correspondingly were obtained although the thickness of detector was two times more than earlier.

  15. A pixellated γ-camera based on CdTe detectors clinical interests and performances

    NASA Astrophysics Data System (ADS)

    Chambron, J.; Arntz, Y.; Eclancher, B.; Scheiber, Ch; Siffert, P.; Hage Hali, M.; Regal, R.; Kazandjian, A.; Prat, V.; Thomas, S.; Warren, S.; Matz, R.; Jahnke, A.; Karman, M.; Pszota, A.; Nemeth, L.

    2000-07-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cm×15 cm detection matrix of 2304 CdTe detector elements, 2.83 mm×2.83 mm×2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the γ-camera performances. But their use as γ detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The γ-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the γ-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close γ sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess the extent of an

  16. Growth and optical characterization of strained CdZnTe/ CdTe quantum wells

    NASA Astrophysics Data System (ADS)

    Reno, J. L.; Jones, E. D.

    1991-04-01

    We have grown strained Cd1-xZnxTe (x ≈ 0.2)/CdTe single and multiple quantum wells by molecular beam epitaxy. GaAs was used as a substrate. The well widths were systematically increased until the critical thickness was exceeded. Low-temperature (liquid helium) photoluminescence (PL) spectroscopy was used to characterize the films. Two prominent PL peaks were observed: one arising from the quantum well and the other from the barrier material. The energy of the quantum well luminescence is consistent with theory when strain is included. The critical layer thickness for the CdTe quantum wells was found to be between 150 and 175 å, in agreement with the model of Matthews and Blakeslee.

  17. Characterization of a large CdZnTe coplanar quad-grid semiconductor detector

    NASA Astrophysics Data System (ADS)

    Ebert, J.; Gehre, D.; Gößling, C.; Hagner, C.; Heidrich, N.; Klingenberg, R.; Kröninger, K.; Nitsch, C.; Oldorf, C.; Quante, T.; Rajek, S.; Rebber, H.; Rohatsch, K.; Tebrügge, J.; Temminghoff, R.; Theinert, R.; Timm, J.; Wonsak, B.; Zatschler, S.; Zuber, K.

    2016-01-01

    The COBRA collaboration aims to search for neutrinoless double beta-decay of 116Cd. A demonstrator setup with 64 CdZnTe semiconductor detectors, each with a volume of 1 cm3, is currently being operated at the LNGS underground laboratory in Italy. This paper reports on the characterization of a large 2 × 2 × 1.5cm3 CdZnTe detector with a new coplanar-grid design for applications in γ-ray spectroscopy and low-background operation. Several studies of electric properties as well as of the spectrometric performance, like energy response and resolution, are conducted. Furthermore, measurements including investigating the operational stability and a possibility to identify multiple-scattered photons are presented.

  18. Electroless gold contact deposition on CdZnTe detectors by scanning pipette technique

    NASA Astrophysics Data System (ADS)

    Zambelli, N.; Marchini, L.; Benassi, G.; Calestani, D.; Caroli, E.; Zappettini, A.

    2012-08-01

    Gold electroless contacts are commonly used for the preparation of CdZnTe-based detectors. In this work it is shown that it is possible to deposit electroless patterned contacts on CdZnTe detectors without the use of photolithography by means of the scanning pipette technique. The technique is based on the delivery of gold chloride solution by means of a pipette moved by micro-controlled motors. The obtained detectors show optimal current-voltage characteristics and good spectroscopic response.

  19. CdZnTe position-sensitive drift detectors with thicknesses up to 5 cm

    NASA Astrophysics Data System (ADS)

    Bolotnikov, A. E.; Camarda, G. S.; Chen, E.; Cheng, S.; Cui, Y.; Gul, R.; Gallagher, R.; Dedic, V.; De Geronimo, G.; Ocampo Giraldo, L.; Fried, J.; Hossain, A.; MacKenzie, J. M.; Sellin, P.; Taherion, S.; Vernon, E.; Yang, G.; El-hanany, U.; James, R. B.

    2016-02-01

    We investigated the feasibility of long-drift-time CdZnTe (CZT) gamma-ray detectors, fabricated from CZT material produced by Redlen Technologies. CZT crystals with cross-section areas of 5 × 5 mm2 and 6 × 6 mm2 and thicknesses of 20-, 30-, 40-, and 50-mm were configured as 3D position-sensitive drift detectors and were read out using a front-end ASIC. By correcting the electron charge losses caused by defects in the crystals, we demonstrated high performance for relatively thick detectors fabricated from unselected CZT material.

  20. CdZnTe Image Detectors for Hard-X-Ray Telescopes

    NASA Technical Reports Server (NTRS)

    Chen, C. M. Hubert; Cook, Walter R.; Harrison, Fiona A.; Lin, Jiao Y. Y.; Mao, Peter H.; Schindler, Stephen M.

    2005-01-01

    Arrays of CdZnTe photodetectors and associated electronic circuitry have been built and tested in a continuing effort to develop focal-plane image sensor systems for hard-x-ray telescopes. Each array contains 24 by 44 pixels at a pitch of 498 m. The detector designs are optimized to obtain low power demand with high spectral resolution in the photon- energy range of 5 to 100 keV. More precisely, each detector array is a hybrid of a CdZnTe photodetector array and an application-specific integrated circuit (ASIC) containing an array of amplifiers in the same pixel pattern as that of the detectors. The array is fabricated on a single crystal of CdZnTe having dimensions of 23.6 by 12.9 by 2 mm. The detector-array cathode is a monolithic platinum contact. On the anode plane, the contact metal is patterned into the aforementioned pixel array, surrounded by a guard ring that is 1 mm wide on three sides and is 0.1 mm wide on the fourth side so that two such detector arrays can be placed side-by-side to form a roughly square sensor area with minimal dead area between them. Figure 1 shows two anode patterns. One pattern features larger pixel anode contacts, with a 30-m gap between them. The other pattern features smaller pixel anode contacts plus a contact for a shaping electrode in the form of a grid that separates all the pixels. In operation, the grid is held at a potential intermediate between the cathode and anode potentials to steer electric charges toward the anode in order to reduce the loss of charges in the inter-anode gaps. The CdZnTe photodetector array is mechanically and electrically connected to the ASIC (see Figure 2), either by use of indium bump bonds or by use of conductive epoxy bumps on the CdZnTe array joined to gold bumps on the ASIC. Hence, the output of each pixel detector is fed to its own amplifier chain.

  1. The research of package for CdZnTe detector based on the capacitive Frisch grid structure

    NASA Astrophysics Data System (ADS)

    Qin, Kai-feng; Wang, Lin-jun; Min, Jia-hua; Teng, Jianyong; Shi, Zhu-bin; Zhou, Chen-ying; Zhang, Ji-jun; Huang, Jian; Xia, Yiben

    2009-07-01

    In this paper, the design and fabrication of a capacitive Frisch grid structure for CdZnTe (CZT) detector were investigated. The aging tests were first used to investigate the degradation of the mechanical and electrical characteristics of the CdZnTe detector based on the capacitive frisch grid structure. The effects of the degradation on the performance of CdZnTe detectors were investigated by scanning acoustic microscopy (SAM) test, current-voltage test, and multichannel pulse-height spectrum analysis. In particular, a passivation layer obtained by a two-step passivation processing, combined with a Teflon tape, was used as an insulated layer of the capacitive Frisch grid detector, improving its stability effectively at high voltages. However, further improvements in material and device fabrication (including insulated layer) were required to realize the potential of CZT detectors with the capacitive Frisch grid structure.

  2. Hard x-ray response of a CdZnTe ring-drift detector

    SciTech Connect

    Owens, A.; Hartog, R. den; Quarati, F.; Gostilo, V.; Kondratjev, V.; Loupilov, A.; Kozorezov, A. G.; Wigmore, J. K.; Webb, A.; Welter, E.

    2007-09-01

    We present the results of an experimental study of a special type of CdZnTe detector of hard x and {gamma} rays--A-drift detector. The device consists of a double ring electrode structure surrounding a central point anode with a guard plane surrounding the outer anode ring. The detector can be operated in two distinctively different modes of charge collection--pseudohemispherical and pseudodrift. We study the detector response profiles obtained by scanning the focused x-ray beam over the whole detector area, specifically the variations in count rate, peak position, and energy resolution for x rays from 10 to 100 keV. In addition, at 662 keV the energy resolution was shown to be 4.8 keV, more than a factor of 2 better than for CdZnTe coplanar grid detectors. To interpret the experimental data, we derive an analytical expression for the spatial distribution of the electric field inside the detector and neglecting carrier diffusion, and identify carrier collection patterns for both modes of operation within the drift model approximation. We show that this model provides a good understanding of measured profiles.

  3. Digital pulse-shape processing for CdTe detectors

    NASA Astrophysics Data System (ADS)

    Bargholtz, Chr.; Fumero, E.; Mårtensson, L.; Wachtmeister, S.

    2001-09-01

    CdTe detectors suffer from low photo-peak efficiency and poor energy resolution. These problems are due to the drift properties of charge carriers in CdTe where particularly the holes have small mobility and trapping time. This is reflected in the amplitude and the shape of the detector output. To improve this situation a digital method is introduced where a sampling ADC is used to make a detailed measurement of the time evolution of the pulse. The measured pulse shape is fitted with a model. For the detector under study a model taking hole trapping into account significantly improves the photo-peak efficiency. The description of the hole component is, however, not fully satisfactory since for pulses with a large hole contribution a broadening of the full-energy peak occurs. Allowing for inhomogeneities in the detector material within the model partially remedies this deficiency.

  4. Growth of CdZnTe Crystals for Radiation Detector Applications by Directional Solidification

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua

    2014-01-01

    Advances in Cadmium Zinc Telluride (Cd(sub 1-x)Zn(sub x)Te) growth techniques are needed for the production of large-scale arrays of gamma and x-ray astronomy. The research objective is to develop crystal growth recipes and techniques to obtain large, high quality CdZnTe single crystal with reduced defects, such as charge trapping, twinning, and tellurium precipitates, which degrade the performance of CdZnTe and, at the same time, to increase the yield of usable material from the CdZnTe ingot. A low gravity material experiment, "Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment", will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). One section of the flight experiment is the melt growth of CdZnTe ternary compounds. This talk will focus on the ground-based studies on the growth of Cd(sub 0.80)Zn(sub 0.20)Te crystals for radiation detector applications by directional solidification. In this investigation, we have improved the properties that are most critical for the detector applications (electrical properties and crystalline quality): a) Electrical resistivity: use high purity starting materials (with reproducible impurity levels) and controlled Cd over pressure during growth to reproducibly balance the impurity levels and Cd vacancy concentration b) Crystalline quality: use ultra-clean growth ampoule (no wetting after growth), optimized thermal profile and ampoule design, as well as a technique for supercool reduction to growth large single crystal with high crystalline quality

  5. Charge collection efficiency and space charge formation in CdTe gamma and X-ray detectors

    NASA Astrophysics Data System (ADS)

    Matz, R.; Weidner, M.

    1998-02-01

    A new extended model for the charge collection efficiency in CdTe gamma and X ray detectors is presented which allows to derive from apparent experimental gamma spectra of a quasi-monochromatic source, an 241Am source in the present case, not only the μρ products of electrons and holes individually but also the sign, spatial distribution, and temporal evolution of the net space charge accumulated in the detector. Resistive CdTe and CdZnTe as well as CdTe Schottky detectors are studied. While the resistive type is stable in time and exhibits higher μτ products, the Schottky type shows space charge accumulation which approaches saturation after about 1 h at several 10 11 cm -3. This is attributed to efficient majority carrier depletion, Fermi level shift, and trap filling. Resistive detectors thus appear optimized to the needs of gamma spectroscopy even at low bias voltage, while Schottky types need higher bias to overcome the space charge. They are suited to both, gamma spectroscopy and X-ray detection in analog current mode, where they operate more stably due ρo the higher bias. From the point of view of materials characterization, gamma spectroscopy with Schottky detectors probes and reveals the trap density near the Fermi level (several 10 12 cm -3 eV -1). We find a basically homogeneous spatial distribution suggesting the trap origin being in crystal growth rather than surface processing. Capture of photogenerated charges in traps is detrimental for current-mode operation under high X-ray flux because delayed emission from traps limits the detector's ability to respond to fast signal changes.

  6. Preliminary Performance of CdZnTe Imaging Detector Prototypes

    NASA Technical Reports Server (NTRS)

    Ramsey, B.; Sharma, D. P.; Meisner, J.; Gostilo, V.; Ivanov, V.; Loupilov, A.; Sokolov, A.; Sipila, H.

    1999-01-01

    The promise of good energy and spatial resolution coupled with high efficiency and near-room-temperature operation has fuelled a large International effort to develop Cadmium-Zinc-Telluride (CdZnTe) for the hard-x-ray region. We present here preliminary results from our development of small-pixel imaging arrays fabricated on 5x5x1-mm and 5x5x2-mm spectroscopy and discriminator-grade material. Each array has 16 (4x4) 0.65-mm gold readout pads on a 0.75-mm pitch, with each pad connected to a discrete preamplifier via a pulse-welded gold wire. Each array is mounted on a 3-stage Peltier cooler and housed in an ion-pump-evacuated housing which also contains a hybrid micro-assembly for the 16 channels of electronics. We have investigated the energy resolution and approximate photopeak efficiency for each pixel at several energies and have used an ultra-fine beam x-ray generator to probe the performance at the pixel boundaries. Both arrays gave similar results, and at an optimum temperature of -20 C we achieved between 2 and 3% FWHM energy resolution at 60 keV and around 15% at 5.9 keV. We found that all the charge was contained within 1 pixel until very close to the pixels edge, where it would start to be shared with its neighbor. Even between pixels, all the charge would be appropriately shared with no apparently loss of efficiency or resolution. Full details of these measurements will be presented, together with their implications for future imaging-spectroscopy applications.

  7. CDZNTE ROOM-TEMPERATURE SEMICONDUCTOR GAMMA-RAY DETECTOR FOR NATIONAL-SECURITY APPLICATIONS.

    SciTech Connect

    CAMARDA,G.S.; BOLOTNIKOV, A.E.; CUI, Y.; HOSSAIN, A.; KOHMAN, K.T.; JAMES, R.B.

    2007-05-04

    One important mission of the Department of Energy's National Nuclear Security Administration is to develop reliable gamma-ray detectors to meet the widespread needs of users for effective techniques to detect and identify special nuclear- and radioactive-materials. Accordingly, the Nonproliferation and National Security Department at Brookhaven National Laboratory was tasked to evaluate existing technology and to develop improved room-temperature detectors based on semiconductors, such as CdZnTe (CZT). Our research covers two important areas: Improving the quality of CZT material, and exploring new CZT-based gamma-ray detectors. In this paper, we report on our recent findings from the material characterization and tests of actual CZT devices fabricated in our laboratory and from materials/detectors supplied by different commercial vendors. In particular, we emphasize the critical role of secondary phases in the current CZT material and issues in fabricating the CZT detectors, both of which affect their performance.

  8. Influence of infrared illumination on the characteristics of CdZnTe detectors

    SciTech Connect

    Ivanov, V.; Dorogov, P.; Loutchanski, A.

    2011-07-01

    Infrared (IR) radiation of proper wavelength deep penetrating inside the CdZnTe detector may interact with trapping centers and has a significant influence on the trapping-detrapping processes of charge carriers from traps, thereby influencing charge collection efficiency in the detector. We studied the effect of infrared (IR) illumination on the characteristics of planar and quasi-hemispherical CdZnTe detectors. These results show that the near bandgap IR illumination significantly affects the detectors characteristics. By selecting a wavelength and intensity of illumination, detectors spectrometric characteristics can be significantly improved. Improvement of spectrometric characteristics is due to better uniformity of charge collection on the detector volume, as evidenced by the improvement in the total absorption peak symmetry and shape of the output pulses. The degree of improvement is different for various detectors depending on the characteristics of source material used for detector fabrication and theirs dimensions. For example, a detector of sizes 10 x 10 x 5 mm{sup 3} with an initial energy resolution (FWHM) of 20.6 keV at 662 keV under IR illumination was improved up to 9.1 keV, but a detector of sizes 5 x 5 x 2.5 mm{sup 3} with an initial energy resolution (FWHM) of 7.1 keV can be improved up to 4.8 keV. The IR illumination with a properly chosen intensity improves spectrometric characteristic in a wide range of energies without any losses of registration effectiveness. IR Illumination was practically performed using conventional GaAlAs IR LEDs with different peak wavelengths of emitted radiation. (authors)

  9. HAND-HELD GAMMA-RAY SPECTROMETER BASED ON HIGH-EFFICIENCY FRISCH-RING CdZnTe DETECTORS.

    SciTech Connect

    CUI,Y.

    2007-05-01

    Frisch-ring CdZnTe detectors have demonstrated good energy resolution, el% FWHM at 662 keV, and good efficiency for detecting gamma rays. This technique facilitates the application of CdZnTe materials for high efficiency gamma-ray detection. A hand-held gamma-ray spectrometer based on Frisch-ring detectors is being designed at Brookhaven National Laboratory. It employs an 8x8 CdZnTe detector array to achieve a high volume of 19.2 cm3, so that detection efficiency is significantly improved. By using the front-end ASICs developed at BNL, this spectrometer has a small profile and high energy resolution. The spectrometer includes signal processing circuit, digitization and storage circuit, high-voltage module, and USB interface. In this paper, we introduce the details of the system structure and report our test results with it.

  10. Hand-Held Gamma-Ray Spectrometer Based on High-Efficiency Frisch-Ring Cdznte Detectors

    SciTech Connect

    Cui, Y.; Bolotnikov, A; Camarda, G; Hossain, A; James, R; DeGeronimo, G; Fried, J; O'Connor, P; Kargar, A; et. al.

    2008-01-01

    Frisch-ring CdZnTe detectors have demonstrated both good energy resolution, <1% FWHM at 662 keV, and good efficiency in detecting gamma rays, highlighting the strong potential of CdZnTe materials for such applications. We are designing a hand-held gamma-ray spectrometer based on Frisch-ring detectors at Brookhaven National Laboratory. It employs an 8 times 8 CdZnTe detector array to achieve a high volume of 19.2 cm3, so greatly improving detection efficiency. By using the front-end application-specific integrated circuits (ASICs) developed at BNL, this spectrometer has a small profile and high energy-resolution. It includes a signal processing circuit, digitization and storage circuits, a high-voltage module, and a universal serial bus (USB) interface. In this paper, we detail the system's structure and report the results of our tests with it.

  11. Characterization of M-π-n CdTe pixel detectors coupled to HEXITEC readout chip

    NASA Astrophysics Data System (ADS)

    Veale, M. C.; Kalliopuska, J.; Pohjonen, H.; Andersson, H.; Nenonen, S.; Seller, P.; Wilson, M. D.

    2012-01-01

    Segmentation of the anode-side of an M-π-n CdTe diode, where the pn-junction is diffused into the detector bulk, produces large improvements in the spatial and energy resolution of CdTe pixel detectors. It has been shown that this fabrication technique produces very high inter-pixel resistance and low leakage currents are obtained by physical isolation of the pixels of M-π-n CdTe detectors. In this paper the results from M-π-n CdTe detectors stud bonded to a spectroscopic readout ASIC are reported. The CdTe pixel detectors have 250 μm pitch and an area of 5 × 5 mm2 with thicknesses of 1 and 2 mm. The polarization and energy resolution dependence of the M-π-n CdTe detectors as a function of detector thickness are discussed.

  12. Progress in the Development of CdZnTe Unipolar Detectors for Different Anode Geometries and Data Corrections

    PubMed Central

    Zhang, Qiushi; Zhang, Congzhe; Lu, Yanye; Yang, Kun; Ren, Qiushi

    2013-01-01

    CdZnTe detectors have been under development for the past two decades, providing good stopping power for gamma rays, lightweight camera heads and improved energy resolution. However, the performance of this type of detector is limited primarily by incomplete charge collection problems resulting from charge carriers trapping. This paper is a review of the progress in the development of CdZnTe unipolar detectors with some data correction techniques for improving performance of the detectors. We will first briefly review the relevant theories. Thereafter, two aspects of the techniques for overcoming the hole trapping issue are summarized, including irradiation direction configuration and pulse shape correction methods. CdZnTe detectors of different geometries are discussed in detail, covering the principal of the electrode geometry design, the design and performance characteristics, some detector prototypes development and special correction techniques to improve the energy resolution. Finally, the state of art development of 3-D position sensing and Compton imaging technique are also discussed. Spectroscopic performance of CdZnTe semiconductor detector will be greatly improved even to approach the statistical limit on energy resolution with the combination of some of these techniques. PMID:23429509

  13. EFFECTS OF P / N IN HOMOGENEITY ON CDZNTE RADIATION DETECTORS.

    SciTech Connect

    CHU,M.; TERTERIAN,S.; TING,D.; JAMES,R.B.; SZAWLOWSKI,M.; VISSER,G.J.

    2002-07-08

    Spectrometer grade, room-temperature radiation detectors have been produced on Cd{sub 0.90}Zn{sub 0.10}Te grown by the low-pressure Bridgman technique. Small amount of indium has been used to compensate the uncompensated Cd vacancies for the crystals to be semi-insulating. The properties of the detectors are critically dependent on the amount of excess Te introduced into the growth melts of the Cd{sub 0.90}Zn{sub 0.10}Te crystals and the best detectors are fabricated from crystals grown with 1.5% excess Te. Detector resolution of {sup 57}Co and {sup 241}Am radiation peaks are observed on all detectors except the ones produced on Cd{sub 0.90}Zn{sub 0.10}Te grown from the melt in the stoichiometric condition. The lack of resolution of these stoichiometric grown detectors is explained by a p/n conduction-type inhomogeneity model.

  14. POLARIZATION STUDIES OF CdZnTe DETECTORS USING SYNCHROTRON X-RAY RADIATION.

    SciTech Connect

    CAMARDA,G.S.; BOLOTNIKOV, A.E.; CUI, Y.; HOSSAIN, A.; JAMES, R.B.

    2007-07-01

    New results on the effects of small-scale defects on the charge-carrier transport in single-crystal CdZnTe (CZT) material were produced. We conducted detailed studies of the role of Te inclusions in CZT by employing a highly collimated synchrotron x-ray radiation source available at Brookhaven's National Synchrotron Light Source (NSLS). We were able to induce polarization effects by irradiating specific areas with the detector. These measurements allowed the first quantitative comparison between areas that are free of Te inclusions and those with a relatively high concentration of inclusions. The results of these polaration studies will be reported.

  15. Monte Carlo simulation of the energy spectrum for CdZnTe Frisch grid detector

    NASA Astrophysics Data System (ADS)

    Xu, Zhaoli; Wang, Linjun; Min, Jiahua; Teng, Jianyong; Qin, Kaifeng; Hu, Dongni; Zhang, Jijun; Huang, Jian; Xia, Yiben

    2009-07-01

    In this paper, we use the Monte-Carlo method to study the reaction of the electron-hole pairs produced to randomicity and the statistics rule, according to the principal of the detector and the gamma ray track in the CdZnTe detector. The EGSnrc software based on Monte-Carlo method is used to simulate the process of carriers' transportation. The statistics rule greatly reflects the result in Monte Carlo simulation. Firstly, we use Ansys software to create a model of the object for Monte-Carlo simulation, which is the basis for our further Monte-Carlo research. During Ansys simulation, a columniform block is created, where the electrical and thermal properties of the materials for simulation use are established. Then, the charge collection efficiency through the statistical approach was calculated using the EGSnrc software. Furthermore, by considering the interaction mechanism of CdZnTe with gamma ray, several modules in the software are added into Monte Carlo simulation. Finally, the pulse height spectra with the response to gamma ray, are available from the simulation. The comparison between the simulation and the measurement result is indicated, which shows that the simulation experiment is reliable. The Frisch grid detector can get the responses more efficiently than other structure devices.

  16. EFFECT OF SURFACE PREPARATION TECHNIQUE ON THE RADIATION DETECTOR PERFORMANCEOF CDZNTE

    SciTech Connect

    Duff, M

    2007-05-23

    Synthetic CdZnTe (CZT) semiconducting crystals are highly suitable for the room temperature-based detection of gamma radiation. The surface preparation of Au contacts on surfaces of CZT detectors is typically conducted after (1) polishing to remove artifacts from crystal sectioning and (2) chemical etching, which removes residual mechanical surface damage however etching results in a Te rich surface layer that is prone to oxidize. Our studies show that CZT surfaces that are only polished (as opposed to polished and etched) can be contacted with Au and will yield lower surface currents. Due to their decreased dark currents, these as-polished surfaces can be used in the fabrication of gamma detectors exhibiting a higher performance than polished and etched surfaces with relatively less peak tailing and greater energy resolution. CdZnTe or ''CZT'' crystals are attractive to use in homeland security applications because they detect radiation at room temperature and do not require low temperature cooling as with silicon- and germanium-based detectors. Relative to germanium and silicon detectors, CZT is composed of higher Z elements and has a higher density, which gives it greater ''stopping power'' for gamma rays making a more efficient detector. Single crystal CZT materials with high bulk resistivity ({rho}>10{sup 10} {Omega} x cm) and good mobility-lifetime products are also required for gamma-ray spectrometric applications. However, several factors affect the detector performance of CZT are inherent to the as grown crystal material such as the presence of secondary phases, point defects and the presence of impurities (as described in a literature review by R. James and researchers). These and other factors can limit radiation detector performance such as low resistivity, which causes a large electronic noise and the presence of traps and other heterogeneities, which result in peak tailing and poor energy resolution.

  17. Analysis of Surface Chemistry and Detector Performance of Chemically Process CdZnTe crystals

    SciTech Connect

    HOSSAIN, A.; Yang, G.; Sutton, J.; Zergaw, T.; Babalola, O. S.; Bolotnikov, A. E.; Camarda. ZG. S.; Gul, R.; Roy, U. N., and James, R. B.

    2015-10-05

    The goal is to produce non-conductive smooth surfaces for fabricating low-noise and high-efficiency CdZnTe devices for gamma spectroscopy. Sample preparation and results are discussed. The researachers demonstrated various bulk defects (e.g., dislocations and sub-grain boundaries) and surface defects, and examined their effects on the performance of detectors. A comparison study was made between two chemical etchants to produce non-conductive smooth surfaces. A mixture of bromine and hydrogen peroxide proved more effective than conventional bromine etchant. Both energy resolution and detection efficiency of CZT planar detectors were noticeably increased after processing the detector crystals using improved chemical etchant and processing methods.

  18. Nuclear reactor pulse tracing using a CdZnTe electro-optic radiation detector

    NASA Astrophysics Data System (ADS)

    Nelson, Kyle A.; Geuther, Jeffrey A.; Neihart, James L.; Riedel, Todd A.; Rojeski, Ronald A.; Ugorowski, Philip B.; McGregor, Douglas S.

    2012-07-01

    CdZnTe has previously been shown to operate as an electro-optic radiation detector by utilizing the Pockels effect to measure steady-state nuclear reactor power levels. In the present work, the detector response to reactor power excursion experiments was investigated. Peak power levels during an excursion were predicted to be between 965 MW and 1009 MW using the Fuchs-Nordheim and Fuchs-Hansen models and confirmed with experimental data from the Kansas State University TRIGA Mark II nuclear reactor. The experimental arrangement of the Pockels cell detector includes collimated laser light passing through a transparent birefringent crystal, located between crossed polarizers, and focused upon a photodiode. The birefringent crystal, CdZnTe in this case, is placed in a neutron beam emanating from a nuclear reactor beam port. After obtaining the voltage-dependent Pockels characteristic response curve with a photodiode, neutron measurements were conducted from reactor pulses with the Pockels cell set at the 1/4 and 3/4 wave bias voltages. The detector responses to nuclear reactor pulses were recorded in real-time using data logging electronics, each showing a sharp increase in photodiode current for the 1/4 wave bias, and a sharp decrease in photodiode current for the 3/4 wave bias. The polarizers were readjusted to equal angles in which the maximum light transmission occurred at 0 V bias, thereby, inverting the detector response to reactor pulses. A high sample rate oscilloscope was also used to more accurately measure the FWHM of the pulse from the electro-optic detector, 64 ms, and is compared to the experimentally obtained FWHM of 16.0 ms obtained with the 10B-lined counter.

  19. New room temperature high resolution solid-state detector (CdZnTe) for hard x rays and gamma rays

    NASA Technical Reports Server (NTRS)

    Stewart, Amyelizabeth C.; Desai, Upendra D.

    1993-01-01

    The new CdZnTe high 'Z' material represents a significant improvement in detectors for high energy photons. With the thicknesses available, photons up to 100 keV can be efficiently detected. This material has a wide band gap of 1.5 - 2.2 eV which allows it to operate at room temperature while providing high spectral resolution. Results of resolution evaluations are presented. This detector can be used for high resolution spectral measurements of photons in x-ray and gamma-ray astronomy, offering a significant reduction in the weight, power, and volume of the detector system compared to more conventional detector types such as scintillation counters. In addition, the detector will have the simplicity and reliability of solid-state construction. The CdZnTe detector, as a new development, has not yet been evaluated in space. The Get Away Special program can provide this opportunity.

  20. Tellurium antisites in CdZnTe

    NASA Astrophysics Data System (ADS)

    Chu, Muren; Terterian, Sevag; Ting, David; James, Ralph B.; Erickson, Jay C.; Yao, H. Walter; Lam, Terrance T.; Szawlowski, Marek; Szczebiot, Richard W.

    2001-12-01

    The n-type conduction of CdTe and Cd0.96Zn0.04Te crystals grown from melts with excess tellurium indicates that the origin of the donors with an energy level at 0.01 eV below the conduction band are most likely singly ionized tellurium antisites instead of cadmium interstitials. Based on this model, the deep level at 0.75 eV below the conduction band is therefore doubly ionized tellurium antisites. After increasing the zinc content over 7%, CdZnTe turns to p-type. The conduction type variation of CdZnTe crystals as a function of zinc contents is explained by the compensation between the donors of Te-antisites and the acceptors of Cd vacancies. High resitivity Cd0.9Zn0.1Te crystals are produced by compensating the p-type crystals with indium at a low doping level of 1- 5x1015 cm-3. At room temperature, the high yield CdZnTe radiation detectors can resolve the six low energy peaks from the Am241 source, a performance comparable to the best reported CdZnTe detectors.

  1. SemiSPECT: A Small-animal Imaging System Based on Eight CdZnTe Pixel Detectors

    PubMed Central

    Peterson, Todd E.; Kim, Hyunki; Crawford, Michael J.; Gershman, Benjamin M.; Hunter, William C.J.; Barber, H. Bradford; Furenlid, Lars R.; Wilson, Donald W.; Woolfenden, James M.; Barrett, Harrison H.

    2015-01-01

    We have constructed a SPECT system for small animals that utilizes eight CdZnTe pixel detectors. The eight detectors are arranged in a single octagonal ring, where each views the object to be imaged through a single pinhole. Additional projections are obtained via rotation of the animal. Each CdZnTe detector is approximately 2 mm in thickness and is patterned on one surface into a 64×64 array of pixels with 380 micron pitch. We have designed an electronic readout system capable of collecting data from the eight detectors in listmode. In this scheme each event entry for a gamma-ray hit includes the pulse height of the pixel with the largest signal and the pulse height for each of its eight nearest neighbors. We present details of the overall design, the electronics, and system performance. PMID:26568674

  2. Control of electric field in CdZnTe radiation detectors by above-bandgap light

    SciTech Connect

    Franc, J.; Dědič, V.; Rejhon, M.; Zázvorka, J.; Praus, P.; Touš, J.; Sellin, P. J.

    2015-04-28

    We have studied the possibility of above bandgap light induced depolarization of CdZnTe planar radiation detector operating under high flux of X-rays by Pockels effect measurements. In this contribution, we show a similar influence of X-rays at 80 kVp and LED with a wavelength of 910 nm irradiating the cathode on polarization of the detector due to an accumulation of a positive space charge of trapped photo-generated holes. We have observed the depolarization of the detector under simultaneous cathode-site illumination with excitation LED at 910 nm and depolarization above bandgap LED at 640 nm caused by trapping of drifting photo-generated electrons. Although the detector current is quite high during this depolarization, we have observed that it decreases relatively fast to its initial value after switching off the depolarizing light. In order to get detailed information about physical processes present during polarization and depolarization and, moreover, about associated deep levels, we have performed the Pockels effect infrared spectral scanning measurements of the detector without illumination and under illumination in polarized and optically depolarized states.

  3. Effects of Te inclusions on the performance of CdZnTe radiation detectors

    SciTech Connect

    Bolotnikov,A.E.; Abdul-Jabber, N. M.; Babalola, O. S.; Camarda, G. S.; Cui, Y.; Hossain, A. M.; Jackson, E. M.; Jackson, H. C.; James, J. A.; Kohman, K. T.; Luryi, A. L.; James, R. B.

    2008-10-19

    Te inclusions existing at high concentrations in CdZnTe (CZT) material can degrade the performance of CZT detectors. These microscopic defects trap the free electrons generated by incident radiation, so entailing significant fluctuations in the total collected charge and thereby strongly affecting the energy resolution of thick (long-drift) detectors. Such effects were demonstrated in thin planar detectors, and, in many cases, they proved to be the dominant cause of the low performance of thick detectors, wherein the fluctuations in the charge losses accumulate along the charge's drift path. We continued studying this effect using different tools and techniques. We employed a dedicated beamline recently established at BNL's National Synchrotron Light Source for characterizing semiconductor radiation detectors, along with an IR transmission microscope system, the combination of which allowed us to correlate the concentration of defects with the devices performances. We present here our new results from testing over 50 CZT samples grown by different techniques. Our goals are to establish tolerable limits on the size and concentrations of these detrimental Te inclusions in CZT material, and to provide feedback to crystal growers to reduce their numbers in the material.

  4. TE INCLUSIONS AND THEIR RELATIONSHIP TO THE PERFORMANCE OF CDZNTE DETECTORS.

    SciTech Connect

    CARINI, G.A.; BOLOTNIKOV, A.E.; CAMARDA, G.S.; CUI, Y.; JACKSON, H.; BURGER, A.; KOHMAN, K.T.; LI, L.; JAMES, R.B.

    2006-08-13

    Te-rich secondary phases existing in CdZnTe (CZT) single crystals degrade the spectroscopic performance of these detectors. An unpredictable number of charges are trapped, corresponding to the abundance of these microscopic defects, thereby leading to fluctuations in the total collected charge and strongly affecting the uniformity of charge-collection efficiency. These effects, observed in thin planar detectors, also were found to be the dominant cause of the low performance of thick detectors, wherein the fluctuations accumulate along the charge's drift path. Reducing the size of Te inclusions from a virtual diameter of 10-20 {micro}m down to less than 5 {micro}m already allowed us to produce Frisch-ring detectors with a resolution as good as {approx}0.8% FWHM at 662 keV: Understanding and modeling the mechanisms involving Te-rich secondary phases and charge loss requires systematic studies on a spatial scale never before realized. Here, we describe a dedicated beam-line recently established at BNL's National Synchrotron Light Source for characterizing semiconductor detectors along with a IR system with counting capability that permits us to correlate the concentration of defects with the devices' performances.

  5. Investigation of the spectral improvement of a capacitive Frisch-grid CdZnTe detector by using infrared stimulation

    NASA Astrophysics Data System (ADS)

    Yang, Guoqiang; Xiao, Shali; Ma, Yuedong; Zhang, Liuqiang

    2014-08-01

    A capacitive Frisch-grid CdZnTe detector with different lengths of the Frisch rings has been fabricated, and the influence of infrared (IR) stimulation on the spectral performance of the detector has been investigated. IR stimulation at a wavelength (940 nm), close to the absorption edge of the CdZnTe, was found to improve the detector's spectral performance significantly. IR radiation was noted to influence the detector's sensitivity, changing the equilibrium between free and trapped carriers and improving the charge collection. The degree of improvement was different for detectors with different lengths of the Frisch rings and depended on the weighting potential distribution and the IR illumination intensity. For example, improvement was obtained in the energy resolution (FWHM) at 662 keV from 3.3% without illumination to 2.3% with a low intensity (120 μW) of IR illumination for the capacitive Frisch-grid CdZnTe detector with an 8-mm-long Frisch ring. Good energy resolution could be obtained even at low operating voltages.

  6. Experimental study of double-{beta} decay modes using a CdZnTe detector array

    SciTech Connect

    Dawson, J. V.; Goessling, C.; Koettig, T.; Muenstermann, D.; Rajek, S.; Schulz, O.; Janutta, B.; Zuber, K.; Junker, M.; Reeve, C.; Wilson, J. R.

    2009-08-15

    An array of sixteen 1 cm{sup 3} CdZnTe semiconductor detectors was operated at the Gran Sasso Underground Laboratory (LNGS) to further investigate the feasibility of double-{beta} decay searches with such devices. As one of the double-{beta} decay experiments with the highest granularity the 4x4 array accumulated an overall exposure of 18 kg days. The setup and performance of the array is described. Half-life limits for various double-{beta} decay modes of Cd, Zn, and Te isotopes are obtained. No signal has been found, but several limits beyond 10{sup 20} years have been performed. They are an order of magnitude better than those obtained with this technology before and comparable to most other experimental approaches for the isotopes under investigation. An improved limit for the {beta}{sup +}/EC decay of {sup 120}Te is given.

  7. Application of CdZnTe Gamma-Ray Detector for Imaging Corrosion under Insulation

    NASA Astrophysics Data System (ADS)

    Abdullah, J.; Yahya, R.

    2007-05-01

    Corrosion under insulation (CUI) on the external wall of steel pipes is a common problem in many types of industrial plants. This is mainly due to the presence of moisture or water in the insulation materials. This type of corrosion can cause failures in areas that are not normally of a primary concern to an inspection program. The failures are often the result of localised corrosion and not general wasting over a large area. These failures can tee catastrophic in nature or at least have an adverse economic effect in terms of downtime and repairs. There are a number of techniques used today for CUI investigations. The main ones are profile radiography, pulse eddy current, ultrasonic spot readings and insulation removal. A new system now available is portable Pipe-CUI-Profiler. The nucleonic system is based on dual-beam gamma-ray absorption technique using Cadmium Zinc Telluride (CdZnTe) semiconductor detectors. The Pipe-CUI-Profiler is designed to inspect pipes of internal diameter 50, 65, 80, 90, 100, 125 and 150 mm. Pipeline of these sizes with aluminium or thin steel sheathing, containing fibreglass or calcium silicate insulation to thickness of 25, 40 and 50 mm can be inspected. The system has proven to be a safe, fast and effective method of inspecting pipe in industrial plant operations. This paper describes the application of gamma-ray techniques and CdZnTe semiconductor detectors in the development of Pipe-CUI-Profiler for non-destructive imaging of corrosion under insulation of steel pipes. Some results of actual pipe testing in large-scale industrial plant will be presented.

  8. Application of CdZnTe Gamma-Ray Detector for Imaging Corrosion under Insulation

    SciTech Connect

    Abdullah, J.; Yahya, R.

    2007-05-09

    Corrosion under insulation (CUI) on the external wall of steel pipes is a common problem in many types of industrial plants. This is mainly due to the presence of moisture or water in the insulation materials. This type of corrosion can cause failures in areas that are not normally of a primary concern to an inspection program. The failures are often the result of localised corrosion and not general wasting over a large area. These failures can tee catastrophic in nature or at least have an adverse economic effect in terms of downtime and repairs. There are a number of techniques used today for CUI investigations. The main ones are profile radiography, pulse eddy current, ultrasonic spot readings and insulation removal. A new system now available is portable Pipe-CUI-Profiler. The nucleonic system is based on dual-beam gamma-ray absorption technique using Cadmium Zinc Telluride (CdZnTe) semiconductor detectors. The Pipe-CUI-Profiler is designed to inspect pipes of internal diameter 50, 65, 80, 90, 100, 125 and 150 mm. Pipeline of these sizes with aluminium or thin steel sheathing, containing fibreglass or calcium silicate insulation to thickness of 25, 40 and 50 mm can be inspected. The system has proven to be a safe, fast and effective method of inspecting pipe in industrial plant operations. This paper describes the application of gamma-ray techniques and CdZnTe semiconductor detectors in the development of Pipe-CUI-Profiler for non-destructive imaging of corrosion under insulation of steel pipes. Some results of actual pipe testing in large-scale industrial plant will be presented.

  9. Modelling and 3D optimisation of CdTe pixels detector array geometry - Extension to small pixels

    NASA Astrophysics Data System (ADS)

    Zumbiehl, A.; Hage-Ali, M.; Fougeres, P.; Koebel, J. M.; Regal, R.; Rit, C.; Ayoub, M.; Siffert, P.

    2001-08-01

    CdTe and CdZnTe pixel detectors offer great interest for many applications, especially for medical and industrial imaging. Up to now, the material, generally, used and investigated for pixel arrays was CZT (Hamel et al., IEEE Trans. Nucl. Sci. 43 (3) (1996) 1422; Barrett et al., Phys. Rev. Lett. 75 (1) (1995) 156; Bennett et al., Nucl. Instr. and Meth. A 392 (1997) 260; Eskin et al., J. Appl. Phys. 85 (2) (1999) 647; Brunett et al., J. Appl. Phys. 86 (7) (1999) 3926; Luke, Nucl. Instr. and Meth. A 380 (1996) 232), but cadmium telluride can also be an appropriate choice, as shown here. However, we clearly demonstrate here that the optimal pixel configuration is highly dependent on the electrical transport properties of the material. Depending on the field of primary interest, either energy resolution or counting rate efficiency in the photopeak, the geometry for each case has to be optimised. For that purpose, we have developed a calculation of the signal induced onto the pixel. Two distinct parts are used: after showing our approach for the weighting potential calculation, we present our results performed by a "pseudo-Monte Carlo" simulation. Results are supported by a few experimental comparisons. We argue about the optimum sizes with clarifying the problems caused by too small and too large pixel sizes. The study field is chosen to be vast, i.e. pixel size to detector thickness ratios ( W/ L) of 1/8-1, and detector thickness of 1.0-8.0 mm. In addition, several electrical transport properties are used. Since efficiency is often of primary interest, thick detectors could be very attractive, which are shown to be really feasible even on CdTe.

  10. Detector Performance of Ammonium-Sulfide-Passivated CdZnTe and CdMnTe Materials

    SciTech Connect

    Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Marchini, L.; Yang, G.; Hossain, A.; Cui, Y.; Xu, L.; and James, R.B.

    2010-08-01

    Dark currents, including those in the surface and bulk, are the leading source of electronic noise in X-ray and gamma detectors, and are responsible for degrading a detector's energy resolution. The detector material itself determines the bulk leakage current; however, the surface leakage current is controllable by depositing appropriate passivation layers. In previous research, we demonstrated the effectiveness of surface passivation in CZT (CdZnTe) and CMT (CdMnTe) materials using ammonium sulfide and ammonium fluoride. In this research, we measured the effect of such passivation on the surface states of these materials, and on the performances of detectors made from them.

  11. Reduced leakage currents of CdZnTe radiation detectors with HgTe/HgCdTe superlattice contacts

    NASA Astrophysics Data System (ADS)

    Chang, Y.; Grein, C. H.; Becker, C. R.; Huang, J.; Ghosh, S.; Aqariden, F.; Sivananthan, S.

    2012-10-01

    Room-temperature-operating CdZnTe radiation detectors have high energy resolution, linear energy response and are capable of operating in normal counting and spectroscopic modes, hence are highly desirable for medical diagnosis, nondestructive industrial evaluations, homeland security, counterterrorism inspections and nuclear proliferation detection to ensure national and international nuclear safety. HgTe/HgCdTe superlattices can be designed to selectively transport one carrier species while hindering transport of the other. Specifically, one designs a large carrier effective mass for undesired carriers in the electric field direction, which results in low carrier velocities, and yet a density of states for undesired carrier that is lower than that of a comparable bulk semiconductor, which results in low carrier concentrations, hence a low current density under an electric field. The opposite carrier species can be designed to have a large velocity and high density of states, hence producing a large current density. By employing HgTe/HgCdTe superlattices as contact layers intermediate between CdZnTe absorbers and metal contacts, leakage currents under high electric fields are reduced and improved x-ray and γ-ray detector performance is anticipated. Pixilated CdZnTe radiation detectors arrays were fabricated and characterized to evaluate the effectiveness of HgTe/HgCdTe superlattices in reducing leakage currents. Current-voltage characteristics show that HgTe/HgCdTe superlattice contact layers consistently result in significantly reduced leakage currents relative to detectors with only metal contacts.

  12. Characterization of detector-grade CdZnTe crystals grown by traveling heater method (THM)

    NASA Astrophysics Data System (ADS)

    Awadalla, S. A.; Mackenzie, J.; Chen, H.; Redden, B.; Bindley, G.; Duff, M. C.; Burger, A.; Groza, M.; Buliga, V.; Bradley, J. P.; Dai, Z. R.; Teslich, N.; Black, D. R.

    2010-02-01

    This work focuses on the 3. Resultsanddiscussioncharacterization of 10×10×10 mm 3 THM-grown CdZnTe detector-grade crystals that have been post-growth annealed to remove the secondary phases (SPs). All three detectors showed an average energy resolution of ˜1.63% for a small guarded pixel with 3.5 mm diameter, measured using 137Cs—662 keV with an average peak-to-Compton ratio of 2.7. The characterization showed vestiges of SPs and micro-twins present in some of the crystals indicating that the SPs prior to annealing were large and had size in the range of 100-500 μm. The various detectable structural features, such as micron twins, strains and sub-micron level of Te inclusions seemed to have little or no influence in the radiation spectrometer performance of the detectors; this is possibly because they are either having low density or electrically inactive.

  13. Position-sensitive CdTe detector using improved crystal growth method

    NASA Technical Reports Server (NTRS)

    1988-01-01

    The feasibility of developing a position-sensitive CdTe detector array for astronomical observations in the hard X-ray, soft gamma ray region is demonstrated. In principle, it was possible to improve the resolution capability for imaging measurements in this region by orders of magnitude over what is now possible through the use of CdTe detector arrays. The objective was to show that CdTe crystals of the quality, size and uniformity required for this application can be obtained with a new high pressure growth technique. The approach was to fabricate, characterize and analyze a 100 element square array and several single-element detectors using crystals from the new growth process. Results show that detectors fabricated from transversely sliced, 7 cm diameter wafers of CdTe exhibit efficient counting capability and a high degree of uniformity over their entire areas. A 100 element square array of 1 sq mm detectors was fabricated and operated.

  14. Position-sensitive CdTe detector using improved crystal growth method

    NASA Astrophysics Data System (ADS)

    1988-09-01

    The feasibility of developing a position-sensitive CdTe detector array for astronomical observations in the hard X-ray, soft gamma ray region is demonstrated. In principle, it was possible to improve the resolution capability for imaging measurements in this region by orders of magnitude over what is now possible through the use of CdTe detector arrays. The objective was to show that CdTe crystals of the quality, size and uniformity required for this application can be obtained with a new high pressure growth technique. The approach was to fabricate, characterize and analyze a 100 element square array and several single-element detectors using crystals from the new growth process. Results show that detectors fabricated from transversely sliced, 7 cm diameter wafers of CdTe exhibit efficient counting capability and a high degree of uniformity over their entire areas. A 100 element square array of 1 sq mm detectors was fabricated and operated.

  15. CHARACTERIZATION OF PD IMPURITIES AND TWIN BOUNDARY DEFECTS IN DETECTOR GRADE CDZNTE CRYSTALS

    SciTech Connect

    Duff, M.

    2011-06-22

    Synthetic CdZnTe or ''CZT'' crystals are highly suitable for {gamma}-spectrometers operating at the room temperature. Secondary phases (SP) in CZT are known to inhibit detector performance, particularly when they are present in large numbers or dimensions. These SP may exist as voids or composites of non-cubic phase metallic Te layers with bodies of polycrystalline and amorphous CZT material and voids. Defects associated with crystal twining may also influence detector performance in CZT. Using transmission electron microscopy, we identify two types of defects that are on the nano scale. The first defect consists of 40 nm diameter metallic Pd/Te bodies on the grain boundaries of Te-rich composites. Although the nano-Pd/Te bodies around these composites may be unique to the growth source of this CZT material, noble metal impurities like these may contribute to SP formation in CZT. The second defect type consists of atom-scale grain boundary dislocations. Specifically, these involve inclined ''finite-sized'' planar defects or interfaces between layers of atoms that are associated with twins. Finite-sized twins may be responsible for the subtle but observable striations that can be seen with optical birefringence imaging and synchrotron X-ray topographic imaging.

  16. Use of high-granularity position sensing to correct response non-uniformities of CdZnTe detectors

    SciTech Connect

    Bolotnikov, A. E. Camarda, G. S.; Cui, Y.; De Geronimo, G.; Fried, J.; Hossain, A.; Mahler, G.; Maritato, M.; Marshall, M.; Roy, U.; Vernon, E.; Yang, G.; James, R. B.; Lee, K.; Petryk, M.

    2014-06-30

    CdZnTe (CZT) is a promising medium for room-temperature gamma-ray detectors. However, the low production yield of acceptable quality crystals hampers the use of CZT detectors for gamma-ray spectroscopy. Significant efforts have been directed towards improving quality of CZT crystals to make them generally available for radiation detectors. Another way to address this problem is to implement detector designs that would allow for more accurate and predictable correction of the charge loss associated with crystal defects. In this work, we demonstrate that high-granularity position-sensitive detectors can significantly improve the performance of CZT detectors fabricated from CZT crystals with wider acceptance boundaries, leading to an increase of their availability and expected decrease in cost.

  17. Influence of the thickness of a crystal on the electrical characteristics of Cd(Zn)Te detectors

    SciTech Connect

    Sklyarchuk, V.; Fochuk, p.; Rarenko, I.; Zakharuk, Z.; Sklyarchuk, O. F.; Bolotnikov, A. E.; James, R. B.

    2015-08-01

    We studied the electrical characteristics of Cd(Zn)Te detectors with rectifying contacts and varying thicknesses, and established that their geometrical dimensions affect the measured electrical properties. We found that the maximum value of the operating-bias voltage and the electric field in the detector for acceptable values of the dark current can be achieved when the crystal has an optimum thickness. This finding is due to the combined effect of generation-recombination in the space-charge region and space-charge limited currents (SCLC).

  18. Development of CDZNTE Detectors for Low-Energy Gamma-Ray Astronomy

    NASA Technical Reports Server (NTRS)

    Gehrels, N.

    1999-01-01

    Under this grant the UC Berkeley PI, K. Hurley, joined a Goddard-led effort to develop large area, multi-pixel Cadmium-Zinc-Telluride (CdZnTe, or CZT) detectors for gamma-ray astronomy. His task was to advise the project of new developments in the area of cosmic gamma-ray bursts, in order to focus the detector development effort on the construction of an instrument which could be deployed on a spacecraft to localize and measure the energy spectra of bursts with good angular and energy resolution, respectively. UC Berkeley had no hardware role in this proposal. The result of this effort was the production, at Goddard, of five CZT prototype modules. A proposal was written for SWIFT, a MIDEX mission to study cosmic gamma-ray bursts. One experiment aboard SWIFT is the Burst Arcminute Telescope (BAT), which consists of a 5200 sq cm hard X-ray detector and a coded mask. The detector comprises 256 CZT modules, each containing 128 4 x 4 x 2 mm CZT detectors. Each detector is read out using an ASIC. The angular resolution achieved with this mask/array combination is 22 arcminutes, and a strong gamma-ray burst can be localized to an accuracy of 4 arcminutes in under 10 seconds. The energy resolution is typically 5 keV FWHM at 60 keV, and the energy range is 10 - 150 keV. The BAT views 2 steradians, and its sensitivity is such that the instrument can detect 350 gamma-ray burst/year, localizing 320 of them to better than 4 arcminute accuracy. The BAT concept therefore met the science goals for gamma-ray bursts. The UCB effort in the SWIFT proposal included the scientific objectives for gamma-ray bursts, and the assembly of a team of optical and radio observers who would use the BAT data to perform rapid multi-wavelength searches for the counterparts to bursts. This proposal was submitted to NASA and peer-reviewed. In January 1999 it was one of five such proposals selected for a Phase A study. This study was completed in June, and SWIFT was formally presented to NASA in

  19. Characteristics of a Frisch collar grid CdZnTe radiation detector grown by low-pressure Bridgman method

    NASA Astrophysics Data System (ADS)

    Jeong, Manhee; Jo, Woo Jin; Kim, Han Soo; Ha, Jang Ho

    2015-06-01

    A single-polarity charge-sensing method was studied by using a CdZnTe Frisch collar grid detector grown by using a low-pressure Bridgeman furnace at the Korea Atomic Energy Research Institute (KAERI). The Frisch collar grid CdZnTe detector has an active volume of 5 × 5 × 10 mm3, and was fabricated from a single crystal, Teflon tape and copper tape used as a Frisch collar grid. A room-temperature energy resolution of 6% full width at half maximum (FWHM) was obtained for the 662keV peak of Cs-137 without any additional electrical corrections. The detector's fabrication process is described, and its characteristics are discussed. Finally, the charge transport properties and gamma-ray energy resolution of the fabricated Frisch collar grid detector are compared with those of two other Frisch collar detectors grown by using different crystal growth methods and purchased from eV-products and Redlen technology.

  20. Geometrical and total efficiencies of CdZnTe rectangular parallelepiped detector using arbitrary positioned point, plane, and volumetric sources

    NASA Astrophysics Data System (ADS)

    Hamzawy, A.; Badawi, Mohamed S.; Thabet, Abouzeid A.; Gouda, Mona M.; El-Khatib, Ahmed M.; Abbas, Mahmoud I.

    2016-02-01

    Gamma-ray detectors are widely used in many fields like environmental measurements, medicine, space science, and industry, where the detector geometrical, total, photopeak efficiencies and peak-to-total ratio could be required. The calculation of the detector efficiency depends mainly on the value of the geometrical efficiency, which depends on the solid angle subtended by the source-detector system. The present work introduces a direct analytical method to calculate the geometrical and total efficiencies of CdZnTe gamma-ray detector using off-axis isotropic radiating γ-ray [point, disk, and cylindrical] sources. To test the validity of the present work, the results are compared with some published data and also to prove how much it is important to determine the efficiency of difficult gamma-ray detection arrangement.

  1. Geometrical and total efficiencies of CdZnTe rectangular parallelepiped detector using arbitrary positioned point, plane, and volumetric sources.

    PubMed

    Hamzawy, A; Badawi, Mohamed S; Thabet, Abouzeid A; Gouda, Mona M; El-Khatib, Ahmed M; Abbas, Mahmoud I

    2016-02-01

    Gamma-ray detectors are widely used in many fields like environmental measurements, medicine, space science, and industry, where the detector geometrical, total, photopeak efficiencies and peak-to-total ratio could be required. The calculation of the detector efficiency depends mainly on the value of the geometrical efficiency, which depends on the solid angle subtended by the source-detector system. The present work introduces a direct analytical method to calculate the geometrical and total efficiencies of CdZnTe gamma-ray detector using off-axis isotropic radiating γ-ray [point, disk, and cylindrical] sources. To test the validity of the present work, the results are compared with some published data and also to prove how much it is important to determine the efficiency of difficult gamma-ray detection arrangement. PMID:26931896

  2. CdZnTe arrays for nuclear medicine imaging

    SciTech Connect

    Barber, H.B.

    1996-12-31

    In nuclear medicine, a gamma-ray-emitting radiotracer is injected into the body, and the resulting biodistribution is imaged using a gamma camera. Current gamma cameras use a design developed by Anger. An Anger camera makes use of a slab of scintillation detector that is viewed by an array of photomultiplier tubes and uses an analog position estimation technique to determine the position of the gamma ray`s interaction. The image-forming optics is usually a multi-bore collimator made of lead. Such cameras are characterized by poor, system spatial resolution ({approximately}1 cm) due to poor detector resolution ({approximately}0.4 cm) and poor collimator performance. Arrays of semiconductor detectors are an attractive alternative to scintillators for use in gamma cameras. Semiconductor detectors have excellent energy resolution. High spatial resolution is also possible because large semiconductor detector arrays with small pixel sizes can be produced using photolithography techniques. A new crystal growth technique (high-pressure vertical Bridgman) allows production of detector grade CdTe and CdZnTe in multikilogram ingots. Although the cost of CdZnTe detectors has come down substantially in the last few years, in part because of economies of scale, costs are still more than an order of magnitude higher than those required for a commercial camera ($20--$50/gram). High detector costs are perhaps the major stumbling block to developing a semiconductor gamma camera. The photolithography techniques required to make large CdZnTe arrays have already been demonstrated. This paper discusses the recent developments made in CdZnTe detectors.

  3. An effect of the networks of the subgrain boundaries on spectral responses of thick CdZnTe detectors

    SciTech Connect

    Bolotnikov, A.; Butcher, J.; Camarda, G.; Cui, Y.; Egarievwe, S.; Fochuk, P.; Gul,R.; Hamade, M.; Hossain, A.; Kim, K.; Kopach,O.; Petryk, M.; Raghothamachar, B.; Yang, G.; and James, R.B.

    2011-08-12

    CdZnTe (CZT) crystals used for nuclear-radiation detectors often contain high concentrations of subgrain boundaries and networks of poligonized dislocations that can significantly degrade the performance of semiconductor devices. These defects exist in all commercial CZT materials, regardless of their growth techniques and their vendor. We describe our new results from examining such detectors using IR transmission microscopy and white X-ray beam diffraction topography. We emphasize the roles on the devices performances of networks of subgrain boundaries with low dislocation densities, such as poligonized dislocations and mosaic structures. Specifically, we evaluated their effects on the gamma-ray responses of thick, >10 mm, CZT detectors. Our findings set the lower limit on the energy resolution of CZT detectors containing dense networks of subgrain boundaries, and walls of dislocations.

  4. Pulse-shape discrimination of surface events in CdZnTe detectors for the COBRA experiment

    NASA Astrophysics Data System (ADS)

    Fritts, M.; Tebrügge, J.; Durst, J.; Ebert, J.; Gößling, C.; Göpfert, T.; Gehre, D.; Hagner, C.; Heidrich, N.; Homann, M.; Köttig, T.; Neddermann, T.; Oldorf, C.; Quante, T.; Rajek, S.; Reinecke, O.; Schulz, O.; Timm, J.; Wonsak, B.; Zuber, K.

    2014-06-01

    Events near the cathode and anode surfaces of a coplanar grid CdZnTe detector are identifiable by means of the interaction depth information encoded in the signal amplitudes. However, the amplitudes cannot be used to identify events near the lateral surfaces. In this paper a method is described to identify lateral surface events by means of their pulse shapes. Such identification allows for discrimination of surface alpha particle interactions from more penetrating forms of radiation, which is particularly important for rare event searches. The effectiveness of the presented technique in suppressing backgrounds due to alpha contamination in the search for neutrinoless double beta decay with the COBRA experiment is demonstrated.

  5. Performance of a new Schottky CdTe detector for hard x-ray spectroscopy

    NASA Astrophysics Data System (ADS)

    Takahashi, Tadayuki; Hirose, K.; Matsumoto, Chiho; Takizawa, Kyoko; Ohno, Ryouichi; Ozaki, Tsutomu; Mori, Kunishiro; Tomita, Yasuhiro

    1998-07-01

    We report a significant improvement of the spectral properties of a cadmium telluride (CdTe) detector. With the use of a high quality CdTe crystal, we formed a high Schottky barrier for the holes on a CdTe surface using a low work-function metal, indium. For a 2 X 2 mm(superscript 2) detector with a thickness of 0.5 mm the leakage current was measured to be 0.7 nA at room temperature (20 degree(s)C) and 10 pA at -20 degree(s)C for a 400 V bias voltage. The low-leakage current of the detector allows us to operate the detector at a higher bias voltage than previous CdTe detectors. The improved charge collection efficiency and the low-leakage current leads to an energy resolution of 1.1 - 2.5 keV FWHM in the energy range 2 keV to 150 keV at 20 degree(s)C without charge loss correction electronics. We confirmed that once a high electric field of several kV/cm is applied, the Schottky CdTe has a very good energy resolution as well as sufficient stability to be used for practical applications.

  6. The use of Schottky CdTe detectors for high-energy astronomy: application to the detection plane of the instrument SVOM/ECLAIRs

    NASA Astrophysics Data System (ADS)

    Nasser, G.; Godet, O.; Atteia, J.-L.; Amoros, C.; Barret, D.; Bordon, S.; Cordier, B.; Gevin, O.; Gonzalez, F.; Houret, B.; Lacombe, K.; Mandrou, P.; Marty, W.; Mercier, K.; Pons, R.; Rambaud, D.; Ramon, P.; Rouaix, G.; Waegebaert, V.

    2014-07-01

    Ohmic CdZnTe and CdTe detectors have been successfully used in high-energy missions such as IBIS on-board INTEGRAL and the Swift-BAT in the past two decades. Such detectors provide very good quantum efficiency in the hard X-ray band. For the future generation of hard X-ray coded mask detectors, a higher sensitivity will be required. A way to achieve this is to increase the effective area of the pixilated detection plane, to change the mask pattern and/or the properties of the semi-conductors paving the detection plane. For the future Chinese-French Gamma-ray burst mission SVOM, the GRB trigger camera ECLAIRs will make use of a new type of high-energy detectors, the Schottky CdTe detectors. Such detectors, when reversely biased, are known to present very low leakage current, resulting in lower values of the low-energy threshold (down to 4 keV or less) than for previous missions (i.e. > 10 keV for the Swift-BAT and INTEGRAL/IBIS). Such low values will enable ECLAIRs with a moderate geometrical area of 1024 cm2 and a low-energy threshold of 4 keV to be more sensitive to high-redshift GRBs (emitting mainly in X-rays) than the Swift-BAT with a higher effective area and low-energy threshold. However, the spectral performance of such detectors are known to degrade over time, once polarized, due to the polarization effect that strongly depends on the temperature and the bias voltage applied to the detectors. In this paper, we present an intensive study of the properties of Schottky CdTe detectors as used on SVOM/ECLAIRs such as I-V characteristics, polarization effect, activation energy and low temperature annealing effects. We discuss the implications of these measurements on the use of this type of detectors in future high-energy instruments.

  7. Testing the plutonium isotopic analysis code FRAM with various CdTe detectors.

    SciTech Connect

    Vo, Duc T.; Russo, P. A.

    2002-01-01

    The isotopic analysis code Fixed-energy Response-function Analysis with Multiple efficiency (FRAM)1,2 has been proven to successfully analyze plutonium spectra taken with a portable CdTe detector with Peltier cooling, the first results of this kind for a noncryogenic detector.3 These are the first wide-range plutonium gamma-ray isotopics analysis results obtained with other than Ge spectrometers. The CdTe spectrometer measured small plutonium reference samples in reasonable count times, covering the range from low to high burnup. This paper describes further testing of FRAM with two CdTe detectors of different sizes and resolutions using different analog and digital, portable multichannel analyzers (MCAs).

  8. Investigation of Charge Transport Properties of CdZnTe Detectors with Synchrotron X-ray Radiation

    SciTech Connect

    Yang,G.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Hossain, A.; James, R.B.

    2008-10-19

    Various internal defects, such as Te inclusions, twin boundaries, dislocation, etc., are prevalent in as-grown CdZnTe (CZT) crystals, which affect the charge transport properties of CZT crystals and, therefore, worsen the performance of CZT detectors. In order to develop high quality CZT detectors, it is imperative to clarify the effects of internal defects on the charge transport properties of CZT. Simple flood illumination with nuclear radiation source cannot reveal the nature of highly localized defects in CZT. Therefore, at Brookhaven's National Synchrotron Light Source (NSLS), we have developed a unique testing system for micro-scale defect investigation of CZT, which employs an X-ray beam collimated with the spatial resolution as small as 3 x 3 {micro}m{sup 2}, a microscopic size comparable to the scale of common defects in CZT. This powerful tool enables us to investigate the effect of internal defects on charge transport properties of CZT in detail.

  9. Novel ZnO:Al contacts to CdZnTe for X- and gamma-ray detectors

    NASA Astrophysics Data System (ADS)

    Roy, U. N.; Mundle, R. M.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Pradhan, A. K.; James, R. B.

    2016-05-01

    CdZnTe (CZT) has made a significant impact as a material for room-temperature nuclear-radiation detectors due to its potential impact in applications related to nonproliferation, homeland security, medical imaging, and gamma-ray telescopes. In all such applications, common metals, such as gold, platinum and indium, have been used as electrodes for fabricating the detectors. Because of the large mismatch in the thermal-expansion coefficient between the metal contacts and CZT, the contacts can undergo stress and mechanical degradation, which is the main cause for device instability over the long term. Here, we report for the first time on our use of Al-doped ZnO as the preferred electrode for such detectors. The material was selected because of its better contact properties compared to those of the metals commonly used today. Comparisons were conducted for the detector properties using different contacts, and improvements in the performances of ZnO:Al-coated detectors are described in this paper. These studies show that Al:ZnO contacts to CZT radiation detectors offer the potential of becoming a transformative replacement for the common metallic contacts due to the dramatic improvements in the performance of detectors and improved long-term stability.

  10. Novel ZnO:Al contacts to CdZnTe for X- and gamma-ray detectors.

    PubMed

    Roy, U N; Mundle, R M; Camarda, G S; Cui, Y; Gul, R; Hossain, A; Yang, G; Pradhan, A K; James, R B

    2016-01-01

    CdZnTe (CZT) has made a significant impact as a material for room-temperature nuclear-radiation detectors due to its potential impact in applications related to nonproliferation, homeland security, medical imaging, and gamma-ray telescopes. In all such applications, common metals, such as gold, platinum and indium, have been used as electrodes for fabricating the detectors. Because of the large mismatch in the thermal-expansion coefficient between the metal contacts and CZT, the contacts can undergo stress and mechanical degradation, which is the main cause for device instability over the long term. Here, we report for the first time on our use of Al-doped ZnO as the preferred electrode for such detectors. The material was selected because of its better contact properties compared to those of the metals commonly used today. Comparisons were conducted for the detector properties using different contacts, and improvements in the performances of ZnO:Al-coated detectors are described in this paper. These studies show that Al:ZnO contacts to CZT radiation detectors offer the potential of becoming a transformative replacement for the common metallic contacts due to the dramatic improvements in the performance of detectors and improved long-term stability. PMID:27216387

  11. Novel ZnO:Al contacts to CdZnTe for X- and gamma-ray detectors

    PubMed Central

    Roy, U. N.; Mundle, R. M.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Pradhan, A. K.; James, R. B.

    2016-01-01

    CdZnTe (CZT) has made a significant impact as a material for room-temperature nuclear-radiation detectors due to its potential impact in applications related to nonproliferation, homeland security, medical imaging, and gamma-ray telescopes. In all such applications, common metals, such as gold, platinum and indium, have been used as electrodes for fabricating the detectors. Because of the large mismatch in the thermal-expansion coefficient between the metal contacts and CZT, the contacts can undergo stress and mechanical degradation, which is the main cause for device instability over the long term. Here, we report for the first time on our use of Al-doped ZnO as the preferred electrode for such detectors. The material was selected because of its better contact properties compared to those of the metals commonly used today. Comparisons were conducted for the detector properties using different contacts, and improvements in the performances of ZnO:Al-coated detectors are described in this paper. These studies show that Al:ZnO contacts to CZT radiation detectors offer the potential of becoming a transformative replacement for the common metallic contacts due to the dramatic improvements in the performance of detectors and improved long-term stability. PMID:27216387

  12. Simulation of active-edge pixelated CdTe radiation detectors

    NASA Astrophysics Data System (ADS)

    Duarte, D. D.; Lipp, J. D.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.

    2016-01-01

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper show how localized low resistivity surfaces modify the internal electric field of CdTe creating potential wells. These result in a reduction of charge collection efficiency of the edge pixels, which compares well with experimental data.

  13. Spectral responses of virtual Frisch-grid CdZnTe detectors and their relation to IR microscopy and x-ray diffraction topography data

    NASA Astrophysics Data System (ADS)

    Bolotnikov, A. E.; Babalola, S.; Camarda, G. S.; Cui, Y.; Egarievwe, S. U.; Fochuk, P. M.; Hawrami, R.; Hossain, A.; James, J. R.; Nakonechnyj, I. J.; Yang, Ge; James, R. B.

    2008-08-01

    Virtual Frisch-grid CdZnTe detectors potentially can provide energy resolution close to the statistical limit. However, in real detectors, the quality of the crystals used to fabricate the devices primarily determines energy resolution. In this paper, we report our findings on the spectral response of devices and their relation to material-characterization data obtained using IR microscopy and X-ray diffraction topography.

  14. EFFECTIVENESS OF ELECTROSTATIC SHIELDING AND ELECTRONIC SUBTRACTION TO CORRECT FOR THE HOLE TRAPPING IN CDZNTE SEMICONDUCTOR DETECTORS.

    SciTech Connect

    BOLOTNIKOV,A.E.; CAMARDA, G.S.; HOSSAIN, A.; CUI, Y.; JAMES, R.B.

    2007-08-26

    CdZnTe (CZT) is a very promising material for nuclear-radiation detectors. CZT detectors operate at ambient temperatures and offer high detection efficiency and excellent energy resolution, placing them ahead of high-purity Ge for those applications where cryogenic cooling is problematic. The progress achieved in CZT detectors over the past decade is founded on the developments of robust detector designs and readout electronics, both of which helped to overcome the effects of carrier trapping. Because the holes have low mobility, only electrons can be used to generate signals in thick CZT detectors, so one must account for the variation of the output signal versus the locations of the interaction points. To obtain high spectral resolution, the detector's design should provide a means to eliminate this dependence throughout the entire volume of the device. In reality, the sensitive volume of any ionization detector invariably has two regions. In the first, adjacent to the collecting electrode, the amplitude of the output signal rapidly increases almost to its maximum as the interaction point is located farther from the anode; in the rest of the volume, the output signal remains nearly constant. Thus, the quality of CZT detector designs can be characterized based on the magnitude of the signals variations in the drift region and the ratio between the volumes of the driR and induction regions. The former determines the ''geometrical'' width of the photopeak i.e., the line width that affects the total energy resolution and is attributed to the device's geometry when all other factors are neglected. The latter determines the photopeak efficiency and the area under the continuum in the pulse-height spectra. In this work, we describe our findings from systematizing different designs of CZT detectors and evaluating their performance based on these two criteria.

  15. Effectiveness of electrostatic shielding and electronic subtraction to correct for the hole trapping in CdZnTe semiconductor detectors

    NASA Astrophysics Data System (ADS)

    Bolotnikov, A. E.; Camarda, G. S.; Hossain, A.; Cui, Y.; James, R. B.

    2007-04-01

    CdZnTe (CZT) is a very promising material for nuclear-radiation detectors. CZT detectors operate at ambient temperatures and offer high detection efficiency and excellent energy resolution, placing them ahead of high-purity Ge for those applications where cryogenic cooling is problematic. The progress achieved in CZT detectors over the past decade is founded on the developments of robust detector designs and readout electronics, both of which helped to overcome the effects of carrier trapping. Because the holes have low mobility, only electrons can be used to generate signals in thick CZT detectors, so one must account for the variation of the output signal versus the locations of the interaction points. To obtain high spectral resolution, the detector's design should provide a means to eliminate this dependence throughout the entire volume of the device. In reality, the sensitive volume of any ionization detector invariably has two regions. In the first, adjacent to the collecting electrode, the amplitude of the output signal rapidly increases almost to its maximum as the interaction point is located farther from the anode; in the rest of the volume, the output signal remains nearly constant. Thus, the quality of CZT detector designs can be characterized based on the magnitude of the signals variations in the drift region and the ratio between the volumes of the drift and induction regions. The former determines the "geometrical" width of the photopeak, i.e., the line width that affects the total energy resolution and is attributed to the device's geometry when all other factors are neglected. The latter determines the photopeak efficiency and the area under the continuum in the pulse-height spectra. In this work, we describe our findings from systematizing different designs of CZT detectors and evaluating their performance based on these two criteria.

  16. CdTe X-ray detectors under strong optical irradiation

    SciTech Connect

    Cola, Adriano; Farella, Isabella

    2014-11-17

    The perturbation behaviour of Ohmic and Schottky CdTe detectors under strong optical pulses is investigated. To this scope, the electric field profiles and the induced charge transients are measured, thus simultaneously addressing fixed and free charges properties, interrelated by one-carrier trapping. The results elucidate the different roles of the contacts and deep levels, both under dark and strong irradiation conditions, and pave the way for the improvement of detector performance control under high X-ray fluxes.

  17. Design and performances of a low-noise and radiation-hardened readout ASIC for CdZnTe detectors

    NASA Astrophysics Data System (ADS)

    Bo, Gan; Tingcun, Wei; Wu, Gao; Yongcai, Hu

    2016-06-01

    In this paper, we present the design and performances of a low-noise and radiation-hardened front-end readout application specific integrated circuit (ASIC) dedicated to CdZnTe detectors for a hard X-ray imager in space applications. The readout channel is comprised of a charge sensitive amplifier, a CR-RC shaping amplifier, an analog output buffer, a fast shaper, and a discriminator. An 8-channel prototype ASIC is designed and fabricated in TSMC 0.35-μm mixed-signal CMOS technology, the die size of the prototype chip is 2.2 × 2.2 mm2. The input energy range is from 5 to 350 keV. For this 8-channel prototype ASIC, the measured electrical characteristics are as follows: the overall gain of the readout channel is 210 V/pC, the linearity error is less than 2%, the crosstalk is less than 0.36%, The equivalent noise charge of a typical channel is 52.9 e‑ at zero farad plus 8.2 e‑ per picofarad, and the power consumption is less than 2.4 mW/channel. Through the measurement together with a CdZnTe detector, the energy resolution is 5.9% at the 59.5-keV line under the irradiation of the radioactive source 241Am. The radiation effect experiments show that the proposed ASIC can resist the total ionization dose (TID) irradiation of higher than 200 krad(Si). Project supported by the National Key Scientific Instrument and Equipment Development Project (No. 2011YQ040082), the National Natural Science Foundation of China (Nos. 11475136, 11575144, 61176094), and the Shaanxi Natural Science Foundation of China (No. 2015JM1016).

  18. Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy.

    PubMed

    Gu, Yaxu; Jie, Wanqi; Rong, Caicai; Xu, Lingyan; Xu, Yadong; Lv, Haoyan; Shen, Hao; Du, Guanghua; Guo, Na; Guo, Rongrong; Zha, Gangqiang; Wang, Tao; Xi, Shouzhi

    2016-09-01

    The influence of damage induced by 2MeV protons on CdZnTe radiation detectors is investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency (CCE) in irradiated region is found to be degraded above a fluence of 3.3×10(11)p/cm(2) and the energy spectrum is severely deteriorated with increasing fluence. Moreover, CCE maps obtained under the applied biases from 50V to 400V suggests that local radiation damage results in significant degradation of CCE uniformity, especially under low bias, i. e., 50V and 100V. The CCE nonuniformity induced by local radiation damage, however, can be greatly improved by increasing the detector applied bias. This bias-dependent effect of 2MeV proton-induced radiation damage in CdZnTe detectors is attributed to the interaction of electron cloud and radiation-induced displacement defects. PMID:27399802

  19. Experimental study of {sup 113}Cd {beta} decay using CdZnTe detectors

    SciTech Connect

    Goessling, C.; Kiel, H.; Muenstermann, D.; Oehl, S.; Junker, M.; Zuber, K.

    2005-12-15

    A search for the fourfold forbidden {beta} decay of {sup 113}Cd has been performed with CdZnTe semiconductors. With 0.86 kg {center_dot} d of statistics a half-life for the decay of T{sub 1/2}=[8.2{+-}0.2(stat.){sub -1.0}{sup +0.2}(sys.)]x10{sup 15} yr has been obtained. This is in good agreement with published values. A comparison of the spectral shape with the one given on the Table of Isotopes Web page shows a severe deviation.

  20. Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors

    DOE PAGESBeta

    Egarievwe, Stephen E.; Hossain, Anwar; Okwechime, Ifechukwude O.; Gul, Rubi; James, Ralph B.

    2015-06-23

    Here, mechanically polishing cadmium zinc telluride (CdZnTe) wafers for x-ray and gamma-ray detectors often is inadequate in removing surface defects caused by cutting them from the ingots. Fabrication-induced defects, such as surface roughness, dangling bonds, and nonstoichiometric surfaces, often are reduced through polishing and etching the surface. In our earlier studies of mechanical polishing with alumina powder, etching with hydrogen bromide in hydrogen peroxide solution, and chemomechanical polishing with bromine–methanol–ethylene glycol solution, we found that the chemomechanical polishing process produced the least surface leakage current. In this research, we focused on using two chemicals to chemomechanically polish CdZnTe wafers aftermore » mechanical polishing, viz. bromine–methanol–ethylene glycol (BME) solution, and hydrogen bromide (HBr) in a hydrogen peroxide and ethylene–glycol solution. We used x-ray photoelectron spectroscopy (XPS), current–voltage (I–V) measurements, and Am-241 spectral response measurements to characterize and compare the effects of each solution. The results show that the HBr-based solution produced lower leakage current than the BME solution. Results from using the same chemomechanical polishing solution on two samples confirmed that the surface treatment affects the measured bulk current (a combination of bulk and surface currents). XPS results indicate that the tellurium oxide to tellurium peak ratios for the mechanical polishing process were reduced significantly by chemomechanical polishing using the BME solution (78.9% for Te 3d5/2O2 and 76.7% for Te 3d3/2O2) compared with the HBr-based solution (27.6% for Te 3d5/2O2 and 35.8% for Te 3d3/2O2). Spectral response measurements showed that the 59.5-keV peak of Am-241 remained under the same channel number for all three CdZnTe samples. While the BME-based solution gave a better performance of 7.15% full-width at half-maximum (FWHM) compared with 7.59% FWHM

  1. Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors

    SciTech Connect

    Egarievwe, Stephen E.; Hossain, Anwar; Okwechime, Ifechukwude O.; Gul, Rubi; James, Ralph B.

    2015-06-23

    Here, mechanically polishing cadmium zinc telluride (CdZnTe) wafers for x-ray and gamma-ray detectors often is inadequate in removing surface defects caused by cutting them from the ingots. Fabrication-induced defects, such as surface roughness, dangling bonds, and nonstoichiometric surfaces, often are reduced through polishing and etching the surface. In our earlier studies of mechanical polishing with alumina powder, etching with hydrogen bromide in hydrogen peroxide solution, and chemomechanical polishing with bromine–methanol–ethylene glycol solution, we found that the chemomechanical polishing process produced the least surface leakage current. In this research, we focused on using two chemicals to chemomechanically polish CdZnTe wafers after mechanical polishing, viz. bromine–methanol–ethylene glycol (BME) solution, and hydrogen bromide (HBr) in a hydrogen peroxide and ethylene–glycol solution. We used x-ray photoelectron spectroscopy (XPS), current–voltage (I–V) measurements, and Am-241 spectral response measurements to characterize and compare the effects of each solution. The results show that the HBr-based solution produced lower leakage current than the BME solution. Results from using the same chemomechanical polishing solution on two samples confirmed that the surface treatment affects the measured bulk current (a combination of bulk and surface currents). XPS results indicate that the tellurium oxide to tellurium peak ratios for the mechanical polishing process were reduced significantly by chemomechanical polishing using the BME solution (78.9% for Te 3d5/2O2 and 76.7% for Te 3d3/2O2) compared with the HBr-based solution (27.6% for Te 3d5/2O2 and 35.8% for Te 3d3/2O2). Spectral response measurements showed that the 59.5-keV peak of Am-241 remained under the same channel number for all three CdZnTe samples. While the BME-based solution gave a better

  2. Frontal IBICC study of the induced proton radiation damage in CdTe detectors

    NASA Astrophysics Data System (ADS)

    Pastuović, Željko; Jakšić, Milko

    2001-07-01

    Within a continuous international effort in developing the non-cryogenic semiconductor detectors for gamma ray spectroscopy, various wide gap materials were considered. With a best performance achieved, CdTe- and CdZnTe-based detectors become today widely accepted and commercially available. In addition to possible future use of such detectors for particle-induced gamma-ray emission (PIGE), nuclear microprobes are in recent years applied more as their characterisation tool using the ion beam-induced charge collection (IBICC) technique. Several CdTe detectors of 2×2×1 mm3 size were used in this study. On the basis of frontal IBICC measurements of the charge collection efficiency (CCE) distribution, the spectroscopy performance of detectors were measured. Further degradation of charge collection efficiency and the downward trend in peak position were studied by on-line irradiation of CdTe samples with 3 MeV protons up to 10 10 p/cm2 radiation dose.

  3. Al-doped ZnO contact to CdZnTe for x- and gamma-ray detector applications

    NASA Astrophysics Data System (ADS)

    Roy, U. N.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Mundle, R. M.; Pradhan, A. K.; James, R. B.

    2016-06-01

    The poor adhesion of common metals to CdZnTe (CZT)/CdTe surfaces has been a long-standing challenge for radiation detector applications. In this present work, we explored the use of an alternative electrode, viz., Al-doped ZnO (AZO) as a replacement to common metallic contacts. ZnO offers several advantages over the latter, such as having a higher hardness, a close match of the coefficients of thermal expansion for CZT and ZnO, and better adhesion to the surface of CZT due to the contact layer being an oxide. The AZO/CZT contact was investigated via high spatial-resolution X-ray response mapping for a planar detector at the micron level. The durability of the device was investigated by acquiring I-V measurements over an 18-month period, and good long-term stability was observed. We have demonstrated that the AZO/CZT/AZO virtual-Frisch-grid device performs fairly well, with comparable or better characteristics than that for the same detector fabricated with gold contacts.

  4. Internal electric-field-lines distribution in CdZnTe detectors measured using X-ray mapping

    SciTech Connect

    Bolotnikov,A.E.; , .; Camarda, G.S.; Cui, Y.; Hossain, A.; Yang, G.; Yao, H.W.; James, R.B.

    2009-10-19

    The ideal operation of CdZnTe devices entails having a uniformly distributed internal electric field. Such uniformity especially is critical for thick long-drift-length detectors, such as large-volume CPG and 3-D multi-pixel devices. Using a high-spatial resolution X-ray mapping technique, we investigated the distribution of the electric field in real devices. Our measurements demonstrate that in thin detectors, <5 mm, the electric field-lines tend to bend away from the side surfaces (i.e., a focusing effect). In thick detectors, >1 cm, with a large aspect ratio (thickness-to-width ratio), we observed two effects: the electric field lines bending away from or towards the side surfaces, which we called, respectively, the focusing field-line distribution and the defocusing field-line distribution. In addition to these large-scale variations, the field-line distributions were locally perturbed by the presence of extended defects and residual strains existing inside the crystals. We present our data clearly demonstrating the non-uniformity of the internal electric field.

  5. Structural and Electronic Properties of Gold Contacts on CdZnTe with Different Surface Finishes for Radiation Detector Applications

    NASA Astrophysics Data System (ADS)

    Tari, S.; Aqariden, F.; Chang, Y.; Ciani, A.; Grein, C.; Li, Jin; Kioussis, N.

    2014-08-01

    State-of-the-art room-temperature, high-resolution x-ray and gamma-ray semiconductor detectors can be fabricated from CdZnTe (CZT) crystals. The structural and electronic properties of the CZT surface, especially the contact interfaces, can have a substantial effect on radiation detector performance, for example leakage current, signal-to-noise ratio, and energy resolution, especially for soft x-rays and large pixilated arrays. Atomically smooth and defect-free surfaces are desirable for high-performance CZT-based detectors; chemo-mechanical polishing (CMP) is typically performed to produce such surfaces. The electrical behavior of the metal/CZT interface varies substantially with surface preparation before contact deposition, and with choice of metal and deposition technique. We report a systematic study of the structural and electronic properties of gold (Au) contacts on CZT prepared with different surface finishes. We observed subsurface damage under Au contacts on CMP-finished CZT and abrupt interfaces for Au on chemically-polished (CP) CZT. Schottky barrier formation was observed for Au contacts, irrespective of surface finish, and less charge trapping and low surface resistance were observed for CP-finished surfaces. Pre-deposition surface treatment produced interfaces free from oxide layers.

  6. Internal electric-field-lines distribution in CdZnTe detectors measured using X-ray mapping

    SciTech Connect

    Bolotnikov,A.E.; Camarda, G.S.; Cui, Y.; Hossain, A.; Yang, G.; Yao, H.W.; James, R.B.

    2008-06-01

    The ideal operation of CdZnTe devices entails having a uniformly distributed internal electric field. Such uniformity especially is critical for thick long-drift-length detectors, such as large-volume CPG and 3-D multi-pixel devices. Using a high-spatial resolution X-ray mapping technique, we investigated the distribution of the electric field in real devices. Our measurements demonstrate that in thin detectors, <5 mm, the electric field-lines tend to bend away from the side surfaces (i.e., a focusing effect). In thick detectors, 21 cm, with a large aspect ratio (thickness-to-width ratio), we observed two effects: the electric field lines bending away from or towards the side surfaces, which we called, respectively, the focusing field-line distribution and the defocusing field-line distribution. In addition to these large-scale variations, the field-line distributions were locally perturbed by the presence of extended defects and residual strains existing inside the crystals. We present our data clearly demonstrating the non-uniformity of the internal electric field.

  7. Development of a Spectral Model Based on Charge Transport for the Swift/BAT 32K CdZnTe Detector Array

    NASA Technical Reports Server (NTRS)

    Sato, Goro; Parsons, Ann; Hillinger, Derek; Suzuki, Masaya; Takahashi, Tadayuki; Tashiro, Makoto; Nakazawa, Kazuhiro; Okada, Yuu; Takahashi, Hiromitsu; Watanabe, Shin

    2005-01-01

    The properties of 32K CdZnTe (4 x 4 sq mm large, 2 mm thick) detectors have been studied in the pre-flight calibration of the Burst Alert Telescope (BAT) on-board the Swift Gamma-ray Burst Explorer (scheduled for launch in November 2004). In order to understand the energy response of the BAT CdZnTe array, we first quantify the mobility-lifetime (mu tau) products of carriers in individual CdZnTe detectors, which produce a position dependency in the charge induction efficiency and results in a low energy tail in the energy spectrum. Based on a new method utilizing (57)Co spectra obtained at different bias voltages, the mu tau for electrons ranges from 5.0 x 10(exp -4) to 1.0 x 10(exp -2) sq cm/V while the mu tau for holes ranges from 1.3 x 10(exp -5 to 1.8 x 10(exp -4) sq cm/V. We find that this wide distribution of mu tau products explains the large diversity in spectral shapes between CdZnTe detectors well. We also find that the variation of mu tau products can be attributed to the difference of crystal ingots or manufacturing harness. We utilize the 32K sets of extracted mu tau products to develop a spectral model of the detector. In combination with Monte Carlo simulations, we can construct a spectral model for any photon energy or any incident angle.

  8. Evaluation of XRI-UNO CdTe detector for nuclear medical imaging

    NASA Astrophysics Data System (ADS)

    Jambi, L. K.; Lees, J. E.; Bugby, S. L.; Tipper, S.; Alqahtani, M. S.; Perkins, A. C.

    2015-06-01

    Over the last two decades advances in semiconductor detector technology have reached the point where they are sufficiently sensitive to become an alternative to scintillators for high energy gamma ray detection for application in fields such as medical imaging. This paper assessed the Cadmium-Telluride (CdTe) XRI-UNO semiconductor detector produced by X-RAY Imatek for photon energies of interest in nuclear imaging. The XRI-UNO detector was found to have an intrinsic spatial resolution of <0.5mm and a high incident count rate capability up to at least 1680cps. The system spatial resolution, uniformity and sensitivity characteristics are also reported.

  9. Balloon-Borne Hard X-Ray Spectrometer Using CdTe Detectors

    NASA Astrophysics Data System (ADS)

    Kobayashi, K.; Tsuneta, S.; Tamura, T.; Kumagai, K.; Katsukawa, Y.; Kubo, M.; Sakamoto, Y.; Kohara, N.; Yamagami, T.; Saito, Y.; Mori, K.

    2008-08-01

    Spectroscopic observation of solar flares in the hard X-ray energy range, particularly the 20 ˜ 100 keV region, is an invaluable tool for investigating the flare mechanism. This paper describes the design and performance of a balloon-borne hard X-ray spectrometer using CdTe detectors developed for solar flare observation. The instrument is a small balloon payload (gondola weight 70 kg) with sixteen 10×10×0.5 mm CdTe detectors, designed for a 1-day flight at 41 km altitude. It observes in an energy range of 20-120 keV and has an energy resolution of 3 keV at 60 keV. The second flight on 24 May 2002 succeeded in observing a class M1.1 flare.

  10. Energy and coincidence time resolution measurements of CdTe detectors for PET

    PubMed Central

    Ariño, G.; Chmeissani, M.; De Lorenzo, G.; Puigdengoles, C.; Cabruja, E.; Calderón, Y.; Kolstein, M.; Macias-Montero, J.G.; Martinez, R.; Mikhaylova, E.; Uzun, D.

    2013-01-01

    We report on the characterization of 2 mm thick CdTe diode detector with Schottky contacts to be employed in a novel conceptual design of PET scanner. Results at −8°C with an applied bias voltage of −1000 V/mm show a 1.2% FWHM energy resolution at 511 keV. Coincidence time resolution has been measured by triggering on the preamplifier output signal to improve the timing resolution of the detector. Results at the same bias and temperature conditions show a FWHM of 6 ns with a minimum acceptance energy of 500 keV. These results show that pixelated CdTe Schottky diode is an excellent candidate for the development of next generation nuclear medical imaging devices such as PET, Compton gamma cameras, and especially PET-MRI hybrid systems when used in a magnetic field immune configuration. PMID:23750177

  11. P-I-N CdTe gamma-ray detectors by liquid phase epitaxy (LPE)

    SciTech Connect

    Shin, S.H.; Niizawa, G.T.; Pasko, J.G.; Bostrup, G.L.; Ryan, F.J.; Khoshnevisan, M.; Westmark, C.I.; Fuller, C.

    1984-01-01

    A new device concept of CdTe gamma ray detectors has been demonstrated by using p+(HgCdTe)-n(CdTe)-n+(HgCdTe) diode structures. Both p+ and n/sup +/-type Hg/sub 0.25/Cd/sub 0.75/Te epilayers were grown by the liquid phase epitaxy (LPE) technique on semi-insulating CdTe sensor elements. The LPE-grown P-I-N structure offers potential advantages for p-n junction formation and ohmic contact over standard ion-implanted diodes or Schottky barrier devices. Detectors with active areas of 2 mm/sup 2/ were fabricated. Resolutions of 10 keV were obtained for the 122 keV gamma peak of Co/sup 57/ at room temperature.

  12. P-I-N CdTe gamma ray detectors by liquid phase epitaxy (LPE)

    SciTech Connect

    Shin, S.H.; Bostrup, G.L.; Fuller, C.; Khoshnevisan, M.; Niizawa, G.T.; Pasko, J.G.; Ryan, F.J.; Westmark, C.I.

    1985-02-01

    A new device concept for CdTe gamma ray detectors has been demonstrated using p/sup +/(HgCdTe)-n(CdTe)-n/sup +/ (HgCdTe) diode structures. Both p/sup +/ and n/sup +/ Hg /SUB 0.25/ Cd /SUB 0.75/ Te epilayers were grown by the liquid phase epitaxy (LPE) technique on semi-insulating CdTe sensor elements. The LPE grown P-I-N structure offers potential advantages for p-n junction and ohmic contact formation over standard ion implanted diodes or Schottky barrier devices. Detectors with active areas of 2 mm/sup 2/ were fabricated. Resolutions of 10 KeV were obtained for the 122 KeV gamma peak of Co/sup 57/ at room temperature.

  13. Large-area CdTe diode detector for space application

    NASA Astrophysics Data System (ADS)

    Nakazawa, K.; Takahashi, T.; Watanabe, S.; Sato, G.; Kouda, M.; Okada, Y.; Mitani, T.; Kobayashi, Y.; Kuroda, Y.; Onishi, M.; Ohno, R.; Kitajima, H.

    2003-10-01

    The current status of Schottky CdTe diode detectors, especially in view of their space application for hard X-ray and gamma-ray astronomy, are reported. For practical use in space science, a large-area CdTe diode with a size of 21.5×21.5mm2 and a thickness of 0.5mm was developed. A good energy resolution, 2.8keV (FWHM) at -20°C, and high homogeneity to within 0.2% over the detector were achieved for the spectral performance. This device has successfully passed a series of tests required for its use in space, in view of utilizing Japanese M-V rockets. The tests include the mechanical environment test, vacuum test, long run for weeks and proton-beam radiation. Initial results from a 2×2 segmented electrode large-area device with a guard-ring are also presented.

  14. Topographic Evaluation of the Effect of Passivation in Improving the Performance of CdZnTe Detectors

    NASA Astrophysics Data System (ADS)

    Hossain, A.; Dowdy, A.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Roy, U. N.; Tappero, R.; Tong, X.; Yang, G.; James, R. B.

    2014-08-01

    Surface passivation reportedly is an effective technique for controlling surface leakage current and its related electronic noise. Several chemical agents have been effectively used for passivating cadmium zinc telluride (CdZnTe or CZT) surfaces; however, the long-term stability and the adverse effect on the metal contacts remain questionable. In this study, we reviewed two popular passivating agents, viz. hydrogen peroxide (H2O2) and a mixture of ammonium fluoride and hydrogen peroxide (NH4F + H2O2). Our aim was to identify an ideal one that can effectively and permanently lower surface leakage currents without adversely affecting the metal contacts. We characterized their topographic features and their long-term effectiveness in terms of detector performance, and compared the results to understand their nature. We determined which chemical species were formed, and recorded the peaks of elemental Cd and Te via x-ray photoelectron spectroscopy (XPS) and micron-scale spatial resolution x-ray fluorescence ( μ-XRF). We describe in detail the formation of new chemical species and the material nonuniformity of differently treated surfaces. Their effectiveness was assessed from experimental findings of their electrical properties and the spectral response. Our results imply that both passivating agents lowered the surface leakage current, and improved the detection efficiency of the CZT detectors, but their effectiveness was unstable over time.

  15. ASTRO-H CdTe detectors proton irradiation at PIF

    NASA Astrophysics Data System (ADS)

    Limousin, O.; Renaud, D.; Horeau, B.; Dubos, S.; Laurent, P.; Lebrun, F.; Chipaux, R.; Boatella Polo, C.; Marcinkowski, R.; Kawaharada, M.; Watanabe, S.; Ohta, M.; Sato, G.; Takahashi, T.

    2015-07-01

    ASTRO-H will be operated in a Low Earth Orbit with a 31° inclination at ~550 km altitude, thus passing daily through the South Atlantic Anomaly radiation belt, a specially harsh environment where the detectors are suffering the effect of the interaction with trapped high energy protons. As CdTe detector performance might be affected by the irradiation, we investigate the effect of the accumulated proton fluence on their spectral response. To do so, we have characterized and irradiated representative samples of SGD and HXI detector under different conditions. The detectors in question, from ACRORAD, are single-pixels having a size of 2 mm by 2 mm and 750 μm thick. The Schottky contact is either made of an Indium or Aluminum for SGD and HXI respectively. We ran the irradiation test campaign at the Proton Irradiation Facility (PIF) at PSI, and ESA approved equipment to evaluate the radiation hardness of flight hardware. We simulated the proton flux expected on the sensors over the entire mission, and secondary neutrons flux due to primary proton interactions into the surrounding BGO active shielding. We eventually characterized the detector response evolution, emphasizing each detector spectral response as well as its stability by studying the so-called Polarization effect. The latter is provoking a spectral response degradation against time as a charge accumulation process occurs in Schottky type CdTe sensors. In this paper, we report on the test campaigns at PIF and will show up our experimental setup. We will pursue describing the irradiation conditions associated with our GEANT 4 predictions and finally, we report the main results of our campaigns concluding that the proton effect does not severely affect the CdTe response neither the detector stability while the secondary neutrons might be more active to reduce the performance on the long run.

  16. Imaging detector development for nuclear astrophysics using pixelated CdTe

    NASA Astrophysics Data System (ADS)

    Álvarez, J. M.; Gálvez, J. L.; Hernanz, M.; Isern, J.; Llopis, M.; Lozano, M.; Pellegrini, G.; Chmeissani, M.

    2010-11-01

    The concept of focusing telescopes in the energy range of lines of astrophysical interest (i.e., of energies around 1 MeV) should allow to reach unprecedented sensitivities, essential to perform detailed studies of cosmic explosions and cosmic accelerators. Our research and development activities aim to study a detector suited for the focal plane of a γ-ray telescope mission. A CdTe/CdZnTe detector operating at room temperature, that combines high detection efficiency with good spatial and spectral resolution is being studied in recent years as a focal plane detector, with the interesting option of also operating as a Compton telescope monitor. We present the current status of the design and development of a γ-ray imaging spectrometer in the MeV range, for nuclear astrophysics, consisting of a stack of CdTe pixel detectors with increasing thicknesses. We have developed an initial prototype based on CdTe ohmic detector. The detector has 11×11 pixels, with a pixel pitch of 1 mm and a thickness of 2 mm. Each pixel is stud bonded to a fanout board and routed to an front end ASIC to measure pulse height and rise time information for each incident γ-ray photon. First measurements of a 133Ba and 241Am source are reported here.

  17. Semiconductor multiple-electrode detectors for measuring ionizing radiation at room temperature

    NASA Astrophysics Data System (ADS)

    Lingren, Clinton L.; Apotovsky, Boris A.; Butler, Jack F.; Conwell, Richard L.; Doty, F. Patrick; Friesenhahn, Stan J.; Oganesyan, A.; Pi, Bo; Zhao, S.

    1997-07-01

    Researchers at Digirad Corporation have developed an innovative method for eliminating the effects of hole trapping in radiation detectors made from compound semiconductors such as CdTe or CdZnTe. The technique involves no additional electronics. Working devices have been manufactured in a variety of configurations including imaging arrays. This paper presents results from some simple structures.

  18. A 12-bit 1 MS/s SAR-ADC for multi-channel CdZnTe detectors

    NASA Astrophysics Data System (ADS)

    Wei, Liu; Tingcun, Wei; Bo, Li; Panjie, Guo; Yongcai, Hu

    2015-04-01

    This paper presents a low power, area-efficient and radiation-hardened 12-bit 1 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) for multi-channel CdZnTe (CZT) detector applications. In order to improve the SAR-ADC's accuracy, a novel comparator is proposed in which the offset voltage is self-calibrated and also a new architecture for the unit capacitor array is proposed to reduce the capacitance mismatches in the charge-redistribution DAC. The ability to radiation-harden the SAR-ADC is enhanced through circuit and layout design technologies. The prototype chip was fabricated using a TSMC 0.35 μm 2P4M CMOS process. At a 3.3/5 V power supply and a sampling rate of 1 MS/s, the proposed SAR-ADC achieves a peak signal to noise and distortion ratio (SINAD) of 67.64 dB and consumes only 10 mW power. The core of the prototype chip occupies an active area of 1180 × 1080 μm2. Project supported by the Special-Funded Program on National Key Scientific Instruments and Equipment Development (No. 2011YQ040082).

  19. Super-resolution x-ray imaging by CdTe discrete detector arrays

    NASA Astrophysics Data System (ADS)

    Aoki, T.; Ishida, Y.; Morii, H.; Tomita, Y.; Ohashi, G.; Temmyo, J.; Hatanaka, Y.

    2005-08-01

    512-pixel CdTe super-liner imaging scanner was developed. This device was consist with 512 chips of M-π-n CdTe diode detector fabricated by excimer laser doping process, 8 chips of photon-counting mode 64ch ASIC with FPGA circuit, USB2.0 interface with 1-CPU. It has 5 discriminated levels and over 2Mcps count rate for X-ray penetration imaging. This imaging scanner has 512 discrete CdTe chips for detector arrays with the length of 2.0mm, width of 0.8mm and thickness of 0.5mm. These chips were mounted in four plover array rows for high-resolution imaging with 0.5mm-pitch, therefore the pixel pitch was over the pixel width. When images were taken with scanning system with this arrays, we could obtain over-resolution than pixel width. In this paper, this "over-resolution" imaging will be called "super resolution imaging". In high-resolution imaging device, the pixel devices on one substrate were formed by integrated process, or many discrete detector chips were installed on circuit board, usually. In the latter case, it is easer to make each detector chips than former case, and it are no need to consider charge sharing phenomena compare with one-chip pixel devices. However, a decrease in pixel pitch makes the mount to the detector chip to the ASIC board difficult because the handling will also be difficult The super-resolution technique in this scanner by pixel-shift method for X-ray imaging is shown in this paper

  20. Detecting multi-hit events in a CdZnTe coplanar grid detector using pulse shape analysis: A method for improving background rejection in the COBRA 0νββ experiment

    NASA Astrophysics Data System (ADS)

    McGrath, J.; Fulton, B. R.; Joshi, P.; Davies, P.; Muenstermann, D.; Schulz, O.; Zuber, K.; Freer, M.

    2010-03-01

    A number of experiments are underway to search for a rare form of radioactivity, neutrinoless double beta decay, as a measurement of the half-life would enable the neutrino mass to be determined. The COBRA collaboration [1,2] (Zuber, 2001; Dawson, 2009) employs CdZnTe detectors in such a search. This paper describes techniques using pulse shape analysis for identifying two-centre events in a coplanar grid CdZnTe detector. This enables Compton scatter events to be identified and so suppressing the background present within the COBRA detectors.

  1. CdZnTe detector for hard x-ray and low energy gamma-ray focusing telescope

    NASA Astrophysics Data System (ADS)

    Natalucci, L.; Alvarez, J. M.; Barriere, N.; Caroli, E.; Curado da Silva, R. M.; Del Sordo, S.; Di Cosimo, S.; Frutti, M.; Hernanz, M.; Lozano, M.; Quadrini, E.; Pellegrini, G.; Stephen, J. B.; Ubertini, P.; Uslenghi, M. C.; Zoglauer, A.

    2008-07-01

    The science drivers for a new generation soft gamma-ray mission are naturally focused on the detailed study of the acceleration mechanisms in a variety of cosmic sources. Through the development of high energy optics in the energy energy range 0.05-1 MeV it will be possible to achieve a sensitivity about two orders of magnitude better than the currently operating gamma-ray telescopes. This will open a window for deep studies of many classes of sources: from Galactic X-ray binaries to magnetars, from supernova remnants to Galaxy clusters, from AGNs (Seyfert, blazars, QSO) to the determination of the origin of the hard X-/gamma-ray cosmic background, from the study of antimatter to that of the dark matter. In order to achieve the needed performance, a detector with mm spatial resolution and very high peak efficiency is needed. The instrumental characteristics of this device could eventually allow to detect polarization in a number of objects including pulsars, GRBs and bright AGNs. In this work we focus on the characteristics of the focal plane detector, based on CZT or CdTe semiconductor sensors arranged in multiple planes and viewed by a side detector to enhance gamma-ray absorption in the Compton regime. We report the preliminary results of an optimization study based on simulations and laboratory tests, as prosecution of the former design studies of the GRI mission which constitute the heritage of this activity.

  2. Exploration of Pixelated detectors for double beta decay searches within the COBRA experiment

    NASA Astrophysics Data System (ADS)

    Schwenke, M.; Zuber, K.; Janutta, B.; He, Z.; Zeng, F.; Anton, G.; Michel, T.; Durst, J.; Lück, F.; Gleixner, T.; Gössling, C.; Schulz, O.; Köttig, T.; Krawczynski, H.; Martin, J.; Stekl, I.; Cermak, P.

    2011-09-01

    The aim of the COBRA experiment is the search for neutrinoless double beta decay events in Cadmium Zinc Telluride (CdZnTe) room temperature semiconductor detectors. The development of pixelated detectors provides the potential for clear event identification and thus major background reduction. The tracking option of a semiconductor is a unique approach in this field. For initial studies, several possible detector systems are considered with a special regard for low background applications: the large volume system Polaris with a pixelated CdZnTe sensor, Timepix detectors with Si and enriched CdTe sensor material and a CdZnTe pixel system developed at the Washington University in St. Louis, USA. For all detector systems first experimental background measurements taken at underground laboratories (Gran Sasso Underground Laboratory in Italy, LNGS and the Niederniveau Messlabor Felsenkeller in Dresden, Germany) and additionally for the Timepix detectors simulation results are presented.

  3. Imaging and spectroscopic performance studies of pixellated CdTe Timepix detector

    NASA Astrophysics Data System (ADS)

    Maneuski, D.; Astromskas, V.; Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Marchal, J.; O'Shea, V.; Stewart, G.; Tartoni, N.; Wilhelm, H.; Wraight, K.; Zain, R. M.

    2012-01-01

    In this work the results on imaging and spectroscopic performances of 14 × 14 × 1 mm CdTe detectors with 55 × 55 μm and 110 × 110 μm pixel pitch bump-bonded to a Timepix chip are presented. The performance of the 110 × 110 μm pixel detector was evaluated at the extreme conditions beam line I15 of the Diamond Light Source. The energy of X-rays was set between 25 and 77 keV. The beam was collimated through the edge slits to 20 μm FWHM incident in the middle of the pixel. The detector was operated in the time-over-threshold mode, allowing direct energy measurement. Energy in the neighbouring pixels was summed for spectra reconstruction. Energy resolution at 77 keV was found to be ΔE/E = 3.9%. Comparative imaging and energy resolution studies were carried out between two pixel size detectors with a fluorescence target X-ray tube and radioactive sources. The 110 × 110 μm pixel detector exhibited systematically better energy resolution in comparison to 55 × 55 μm. An imaging performance of 55 × 55 μm pixellated CdTe detector was assessed using the Modulation Transfer Function (MTF) technique and compared to the larger pixel. A considerable degradation in MTF was observed for bias voltages below -300 V. Significant room for improvement of the detector performance was identified both for imaging and spectroscopy and is discussed.

  4. CdTe detectors in medicine: a review of current applications and future perspectives

    NASA Astrophysics Data System (ADS)

    Scheiber, C.; Chambron, J.

    1992-11-01

    Cadmium telluride (CdTe) semiconductor sensors have been evaluated for medical applications for 15 years owing to their high stopping power, convenient energy resolution and operating conditions at room temperature. Most of the applications herein reviewed concern medical imaging procedures, i.e., nuclear medicine, including positron emission tomography and radiology with computerized tomography (XCT). Despite their attractive physical characteristics, their preliminary commercial development has been slowed down in the early 80s because of technical problems, particularly when large arrays were considered, and because of the competition with the more available and less expensive scintillators or xenon chambers which are still mounted in most modern medical imaging systems. Nowadays the characteristics of new materials have allowed the development of restricted but more specific domains of CdTe medical applications i.e. miniaturized nuclear probes dedicated to per-operative tumor detection or ambulatory monitoring of physiological (renal, cardiac) functions and bone absorptiometry using either planar or miniature tomographic systems. Supported by these features and encouraged by the growing competition between ionising and non-ionizing imaging modalities (US, MRI), research work is presently conducted with a view to using CdTe detectors in XCT.

  5. Evaluation of Compton gamma camera prototype based on pixelated CdTe detectors.

    PubMed

    Calderón, Y; Chmeissani, M; Kolstein, M; De Lorenzo, G

    2014-06-01

    A proposed Compton camera prototype based on pixelated CdTe is simulated and evaluated in order to establish its feasibility and expected performance in real laboratory tests. The system is based on module units containing a 2×4 array of square CdTe detectors of 10×10 mm(2) area and 2 mm thickness. The detectors are pixelated and stacked forming a 3D detector with voxel sizes of 2 × 1 × 2 mm(3). The camera performance is simulated with Geant4-based Architecture for Medicine-Oriented Simulations(GAMOS) and the Origin Ensemble(OE) algorithm is used for the image reconstruction. The simulation shows that the camera can operate with up to 10(4) Bq source activities with equal efficiency and is completely saturated at 10(9) Bq. The efficiency of the system is evaluated using a simulated (18) F point source phantom in the center of the Field-of-View (FOV) achieving an intrinsic efficiency of 0.4 counts per second per kilobecquerel. The spatial resolution measured from the point spread function (PSF) shows a FWHM of 1.5 mm along the direction perpendicular to the scatterer, making it possible to distinguish two points at 3 mm separation with a peak-to-valley ratio of 8. PMID:24932209

  6. Study of the effect of the stress on CdTe nuclear detectors

    SciTech Connect

    Ayoub, M.; Radley, I.; Mullins, J. T.; Hage-Ali, M.

    2013-09-14

    CdTe detectors are commonly used for X and γ ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and γ-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given.

  7. Prompt gamma and neutron detection in BNCT utilizing a CdTe detector.

    PubMed

    Winkler, Alexander; Koivunoro, Hanna; Reijonen, Vappu; Auterinen, Iiro; Savolainen, Sauli

    2015-12-01

    In this work, a novel sensor technology based on CdTe detectors was tested for prompt gamma and neutron detection using boronated targets in (epi)thermal neutron beam at FiR1 research reactor in Espoo, Finland. Dedicated neutron filter structures were omitted to enable simultaneous measurement of both gamma and neutron radiation at low reactor power (2.5 kW). Spectra were collected and analyzed in four different setups in order to study the feasibility of the detector to measure 478 keV prompt gamma photons released from the neutron capture reaction of boron-10. The detector proved to have the required sensitivity to detect and separate the signals from both boron neutron and cadmium neutron capture reactions, which makes it a promising candidate for monitoring the spatial and temporal development of in vivo boron distribution in boron neutron capture therapy. PMID:26249745

  8. Use of Sub-bandgap Illumination to Improve Radiation Detector Resolution of CdZnTe

    NASA Astrophysics Data System (ADS)

    Duff, Martine C.; Washington, Aaron L.; Teague, Lucile C.; Wright, Jonathan S.; Burger, Arnold; Groza, Michael; Buliga, Vladimir

    2015-09-01

    The performance of Cd1- x Zn x Te (CZT) materials for room-temperature gamma/x-ray radiation detection continues to improve in terms of material quality and detector design. In our prior publications, we investigated the use of multiple wavelengths of light (in the visible and infrared) to target charge carriers at various trap energies and physical positions throughout crystals. Light exposure significantly alters the charge mobility and improves carrier collection at the anode contact. This study presents an investigation of material performance as a radiation detector during such illumination. The decrease in charge trapping and increase in charge collection due to a higher probability of free electron release from traps contributed to an increase in the resolution-based performance of the detector through controlled illumination. We investigated the performance improvement of CZT crystals with previously known levels of intrinsic defects and secondary phases, at various voltages, light-emitting diode (LED) light wavelengths, and shaping times. Although our setup was clearly not optimized for radiation detector performance, it demonstrated substantial resolution improvements (based on full-width at half-maximum using 662-keV gamma rays from 137Cs upon illumination with 950-nm light) of 16% to 38% in comparison with unilluminated CZT under similar conditions. This manuscript includes discussion of the electrooptic behavior and its effect on performance. Additional testing and fabrication of a detector that incorporates such LED light optimization could lead to improved performance with existing detector-grade materials.

  9. Improvement of the energy resolution of pixelated CdTe detectors for applications in 0νββ searches

    NASA Astrophysics Data System (ADS)

    Gleixner, T.; Anton, G.; Filipenko, M.; Seller, P.; Veale, M. C.; Wilson, M. D.; Zang, A.; Michel, T.

    2015-07-01

    Experiments trying to detect 0νββ are very challenging. Their requirements include a good energy resolution and a good detection efficiency. With current fine pixelated CdTe detectors there is a trade off between the energy resolution and the detection efficiency, which limits their performance. It will be shown with simulations that this problem can be mostly negated by analysing the cathode signal which increases the optimal sensor thickness. We will compare different types of fine pixelated CdTe detectors (Timepix, Dosepix, HEXITEC) from this point of view.

  10. Defect Measurements of CdZnTe Detectors Using I-DLTS, TCT, I-V and Gamma-ray Spectroscopy

    SciTech Connect

    Gul,R.

    2008-08-11

    In this work we measured the crystal defect levels and tested the performance of CdZnTe detectors by diverse methodologies, viz., Current Deep Level Transient Spectroscopy (I-DLTS), Transient Current Technique (TCT), Current and Capacitance versus Voltage measurements (I-V and C-V), and gamma-ray spectroscopy. Two important characteristics of I-DLTS technique for advancing this research are (1) it is applicable for high-resistivity materials (>10{sup 6} {Omega}-cm), and, (2) the minimum temperature for measurements can be as low as 10 K. Such low-temperature capability is excellent for obtaining measurements at shallow levels. We acquired CdZnTe crystals grown by different techniques from two different vendors and characterized them for point defects and their response to photons. I-DLTS studies encompassed measuring the parameters of the defects, such as the energy levels in the band gap, the carrier capture cross-sections and their densities. The current induced by the laser-generated carriers and the charge collected (or number of electrons collected) were obtained using TCT that also provides the transport properties, such as the carrier life time and mobility of the detectors under study. The detector's electrical characteristics were explored, and its performance tested using I-V, C-V and gamma-ray spectroscopy.

  11. Pixelated CdTe detectors to overcome intrinsic limitations of crystal based positron emission mammographs

    NASA Astrophysics Data System (ADS)

    De Lorenzo, G.; Chmeissani, M.; Uzun, D.; Kolstein, M.; Ozsahin, I.; Mikhaylova, E.; Arce, P.; Cañadas, M.; Ariño, G.; Calderón, Y.

    2013-01-01

    A positron emission mammograph (PEM) is an organ dedicated positron emission tomography (PET) scanner for breast cancer detection. State-of-the-art PEMs employing scintillating crystals as detection medium can provide metabolic images of the breast with significantly higher sensitivity and specificity with respect to standard whole body PET scanners. Over the past few years, crystal PEMs have dramatically increased their importance in the diagnosis and treatment of early stage breast cancer. Nevertheless, designs based on scintillators are characterized by an intrinsic deficiency of the depth of interaction (DOI) information from relatively thick crystals constraining the size of the smallest detectable tumor. This work shows how to overcome such intrinsic limitation by substituting scintillating crystals with pixelated CdTe detectors. The proposed novel design is developed within the Voxel Imaging PET (VIP) Pathfinder project and evaluated via Monte Carlo simulation. The volumetric spatial resolution of the VIP-PEM is expected to be up to 6 times better than standard commercial devices with a point spread function of 1 mm full width at half maximum (FWHM) in all directions. Pixelated CdTe detectors can also provide an energy resolution as low as 1.5% FWHM at 511 keV for a virtually pure signal with negligible contribution from scattered events.

  12. A low-noise 64-channel front-end readout ASIC for CdZnTe detectors aimed to hard X-ray imaging systems

    NASA Astrophysics Data System (ADS)

    Gan, B.; Wei, T.; Gao, W.; Liu, H.; Hu, Y.

    2016-04-01

    In this paper, we report on the recent development of a 64-channel low-noise front-end readout ASIC for CdZnTe detectors aimed to hard X-ray imaging systems. The readout channel is comprised of a charge sensitive amplifier, a leakage current compensation circuit, a CR-RC shaper, two S-K filters, an inverse proportional amplifier, a peak-detect-and-hold circuit, a discriminator and trigger logic, a time sequence control circuit and a driving buffer. The readout ASIC is implemented in TSMC 0.35 μm mixed-signal CMOS technology, the die size of the prototype chip is 2.7 mm×8.0 mm. The overall gain of the readout channel is 200 mV/fC, the power consumption is less than 8 mW/channel, the linearity error is less than 1%, the inconsistency among the channels is less than 2.86%, and the equivalent noise charge of a typical channel is 66 e- at zero farad plus 14 e- per picofarad. By connecting this readout ASIC to an 8×8 pixel CdZnTe detector, we obtained an energy spectrum, the energy resolution of which is 4.5% at the 59.5 keV line of 241Am source.

  13. Primary study on the contact degradation mechanism of CdZnTe detectors

    NASA Astrophysics Data System (ADS)

    Sang, Wenbin; Wei, Jin; Qi, Zhang; Wanwan, Li; Jiahua, Min; Jianyong, Teng; Yongbiao, Qian

    2004-07-01

    The metal-CdZnTe (CZT) interface plays a vital role in determining the contact characteristics, which is often the dominant factor influencing detector performance. The effects of the degradation of the interfacial layer between the metal contact layer and CZT surface on the mechanical and electrical properties have been investigated in this paper. The interfacial thermal stresses were simulated using 3-D finite element method (FEM). The results indicate that the maximum thermal stress is concentrated on the midst of the electrode and the magnitude of the stress produced by the different electrode materials in order is Al>Au>Pt>In. The adhesion forces between the metal contact layer and CZT surface were measured by using a Dage PC2400 Micro tester with the shear-off-method. The inter-diffusion between the metal contact layer and CZT was identified using the Anger depth profiles. The experimental results indicate that the electroless Au electrode on p-type high resistivity CZT is of smaller interfacial adhesion strength, but of better ohmicity than the sputtered Au. In addition, the aging effects on the contact characteristics of the detector were also examined.

  14. Development of a Schottky CdTe Medipix3RX hybrid photon counting detector with spatial and energy resolving capabilities

    NASA Astrophysics Data System (ADS)

    Gimenez, E. N.; Astromskas, V.; Horswell, I.; Omar, D.; Spiers, J.; Tartoni, N.

    2016-07-01

    A multichip CdTe-Medipix3RX detector system was developed in order to bring the advantages of photon-counting detectors to applications in the hard X-ray range of energies. The detector head consisted of 2×2 Medipix3RX ASICs bump-bonded to a 28 mm×28 mm e- collection Schottky contact CdTe sensor. Schottky CdTe sensors undergo performance degrading polarization which increases with temperature, flux and the longer the HV is applied. Keeping the temperature stable and periodically refreshing the high voltage bias supply was used to minimize the polarization and achieve a stable and reproducible detector response. This leads to good quality images and successful results on the energy resolving capabilities of the system.

  15. Final Report: A CdZnTe detector for MRI-compatible SPECT Systems

    SciTech Connect

    Meng, Ling-Jian

    2012-12-27

    The key objective of this project is to develop the enabling technology for future MRI-compatible nuclear (e.g. SPECT) imaging system, and to demonstrate the feasibility of performing simultaneous MR and SPECT imaging studies of the same object. During the past three years, we have developed (a) a MRI-compatible ultrahigh resolution gamma ray detector and associated readout electronics, (b) a theoretical approach for modeling the effect of strong magnetic field on SPECT image quality, and (c) a maximum-likelihood (ML) based reconstruction routine with correction for the MR-induced distortion. With this support, we have also constructed a four-head MR-compatible SPECT system and tested the system inside a 3-T clinical MR-scanner located on UI campus. The experimental results obtained with this system have clearly demonstrated that sub-500um spatial resolution can be achieved with a SPECT system operated inside a 3-T MRI scanner. During the past three years, we have accomplished most of the major objectives outlined in the original proposal. These research efforts have laid out a solid foundation the development of future MR-compatible SPECT systems for both pre-clinical and clinical imaging applications.

  16. Experimental evaluation of a-Se and CdTe flat-panel x-ray detectors for digital radiography and fluoroscopy

    NASA Astrophysics Data System (ADS)

    Adachi, Susumu; Hori, Naoyuki; Sato, Kenji; Tokuda, Satoshi; Sato, Toshiyuki; Uehara, Kazuhiro; Izumi, Yoshihiro; Nagata, Hisashi; Yoshimura, Youji; Yamada, Satoshi

    2000-04-01

    Described are two types of direct-detection flat-panel X-ray detectors utilizing amorphous selenium (a-Se) and cadmium telluride (CdTe). The a-Se detector is fabricated using direct deposition onto a thin film transistor (TFT) substrate, whereas the CdTe detector is fabricated using a novel hybrid method, in which CdTe is pre-deposited onto a glass substrate and then connected to a TFT substrate. The detector array format is 512 X 512 with a pixel pitch of 150 micrometer. The imaging properties of both detectors have been evaluated with respect to X-ray sensitivity, lag, spatial resolution, and detective quantum efficiency (DQE). The modulation transfer functions (MTFs) measured at 1 lp/mm were 0.96 for a- Se and 0.65 for CdTe. The imaging lags after 33 ms were about 4% for a-Se and 22% for CdTe. The DQE values measured at zero spatial frequency were 0.75 for a-Se and 0.22 for CdTe. The results indicate that the a-Se and CdTe detectors have high potential as new digital X-ray imaging devices for both radiography and fluoroscopy.

  17. CdTe Focal Plane Detector for Hard X-Ray Focusing Optics

    NASA Technical Reports Server (NTRS)

    Seller, Paul; Wilson, Matthew D.; Veale, Matthew C.; Schneider, Andreas; Gaskin, Jessica; Wilson-Hodge, Colleen; Christe, Steven; Shih, Albert Y.; Inglis, Andrew; Panessa, Marco

    2015-01-01

    The demand for higher resolution x-ray optics (a few arcseconds or better) in the areas of astrophysics and solar science has, in turn, driven the development of complementary detectors. These detectors should have fine pixels, necessary to appropriately oversample the optics at a given focal length, and an energy response also matched to that of the optics. Rutherford Appleton Laboratory have developed a 3-side buttable, 20 millimeter x 20 millimeter CdTe-based detector with 250 micrometer square pixels (80 x 80 pixels) which achieves 1 kiloelectronvolt FWHM (Full-Width Half-Maximum) @ 60 kiloelectronvolts and gives full spectroscopy between 5 kiloelectronvolts and 200 kiloelectronvolts. An added advantage of these detectors is that they have a full-frame readout rate of 10 kilohertz. Working with NASA Goddard Space Flight Center and Marshall Space Flight Center, 4 of these 1 millimeter-thick CdTe detectors are tiled into a 2 x 2 array for use at the focal plane of a balloon-borne hard-x-ray telescope, and a similar configuration could be suitable for astrophysics and solar space-based missions. This effort encompasses the fabrication and testing of flight-suitable front-end electronics and calibration of the assembled detector arrays. We explain the operation of the pixelated ASIC readout and measurements, front-end electronics development, preliminary X-ray imaging and spectral performance, and plans for full calibration of the detector assemblies. Work done in conjunction with the NASA Centers is funded through the NASA Science Mission Directorate Astrophysics Research and Analysis Program.

  18. CdTe focal plane detector for hard x-ray focusing optics

    NASA Astrophysics Data System (ADS)

    Seller, Paul; Wilson, Matthew D.; Veale, Matthew C.; Schneider, Andreas; Gaskin, Jessica; Wilson-Hodge, Colleen; Christe, Steven; Shih, Albert Y.; Gregory, Kyle; Inglis, Andrew; Panessa, Marco

    2015-08-01

    The demand for higher resolution x-ray optics (a few arcseconds or better) in the areas of astrophysics and solar science has, in turn, driven the development of complementary detectors. These detectors should have fine pixels, necessary to appropriately oversample the optics at a given focal length, and an energy response also matched to that of the optics. Rutherford Appleton Laboratory have developed a 3-side buttable, 20 mm x 20 mm CdTe-based detector with 250 μm square pixels (80x80 pixels) which achieves 1 keV FWHM @ 60 keV and gives full spectroscopy between 5 keV and 200 keV. An added advantage of these detectors is that they have a full-frame readout rate of 10 kHz. Working with NASA Goddard Space Flight Center and Marshall Space Flight Center, 4 of these 1mm-thick CdTe detectors are tiled into a 2x2 array for use at the focal plane of a balloon-borne hard-x-ray telescope, and a similar configuration could be suitable for astrophysics and solar space-based missions. This effort encompasses the fabrication and testing of flightsuitable front-end electronics and calibration of the assembled detector arrays. We explain the operation of the pixelated ASIC readout and measurements, front-end electronics development, preliminary X-ray imaging and spectral performance, and plans for full calibration of the detector assemblies. Work done in conjunction with the NASA Centers is funded through the NASA Science Mission Directorate Astrophysics Research and Analysis Program.

  19. Development of mammography system using CdTe photon counting detector for the exposure dose reduction

    NASA Astrophysics Data System (ADS)

    Maruyama, Sho; Niwa, Naoko; Yamazaki, Misaki; Yamakawa, Tsutomu; Nagano, Tatsuya; Kodera, Yoshie

    2014-03-01

    We propose a new mammography system using a cadmium telluride (CdTe) photon-counting detector for exposure dose reduction. In contrast to conventional mammography, this system uses high-energy X-rays. This study evaluates the usefulness of this system in terms of the absorbed dose distribution and contrast-to-noise ratio (CNR) at acrylic step using a Monte Carlo simulation. In addition, we created a prototype system that uses a CdTe detector and automatic movement stage. For various conditions, we measured the properties and evaluated the quality of images produced by the system. The simulation result for a tube voltage of 40 kV and tungsten/barium (W/Ba) as a target/filter shows that the surface dose was reduced more than 60% compared to that under conventional conditions. The CNR of our proposal system also became higher than that under conventional conditions. The point at which the CNRs coincide for 4 cm polymethyl methacrylate (PMMA) at the 2-mm-thick step corresponds to a dose reduction of 30%, and these differences increased with increasing phantom thickness. To improve the image quality, we determined the problematic aspects of the scanning system. The results of this study indicate that, by using a higher X-ray energy than in conventional mammography, it is possible to obtain a significant exposure dose reduction without loss of image quality. Further, the image quality of the prototype system can be improved by optimizing the balance between the shift-and-add operation and the output of the X-ray tube. In future work, we will further examine these improvement points.

  20. Modeling and simulation of Positron Emission Mammography (PEM) based on double-sided CdTe strip detectors

    NASA Astrophysics Data System (ADS)

    Ozsahin, I.; Unlu, M. Z.

    2014-03-01

    Breast cancer is the most common leading cause of cancer death among women. Positron Emission Tomography (PET) Mammography, also known as Positron Emission Mammography (PEM), is a method for imaging primary breast cancer. Over the past few years, PEMs based on scintillation crystals dramatically increased their importance in diagnosis and treatment of early stage breast cancer. However, these detectors have significant limitations like poor energy resolution resulting with false-negative result (missed cancer), and false-positive result which leads to suspecting cancer and suggests an unnecessary biopsy. In this work, a PEM scanner based on CdTe strip detectors is simulated via the Monte Carlo method and evaluated in terms of its spatial resolution, sensitivity, and image quality. The spatial resolution is found to be ~ 1 mm in all three directions. The results also show that CdTe strip detectors based PEM scanner can produce high resolution images for early diagnosis of breast cancer.

  1. Signal formation and decay in CdTe x-ray detectors under intense irradiation.

    PubMed

    Jahnke, A; Matz, R

    1999-01-01

    The response of Cd(Zn)Te Schottky and resistive detectors to intense x-rays is investigated in a commercial computed tomography (CT) system to assess their potential for medical diagnostics. To describe their signal height, responsivity, signal-to-noise ratio (SNR), and detective quantum efficiency the devices are modeled as solid-state ionization chambers with spatially varying electric field and charge collection efficiency. The thicknesses and pixel areas of the discrete detector elements are 0.5-2 mm and a few mm2, respectively. The incident spectrum extends from 26 to 120 keV and comprises 10(10) quanta/s cm2. It photogenerates a carrier concentration in the semiconductor that is two to three orders of magnitude above the intrinsic concentration, but remains to a similar extent below the charge densities on the device electrodes. Stable linear operation is achieved with the Schottky-type devices under high bias. Their behavior can be modeled well if negatively charged near-midgap bulk defects with a concentration of 10(11)-10(13) cm-3 are assumed. The bulk defects explain the amount and time constant (about 100 ms) of the detrapping current measured after x-ray pulses (afterglow). To avoid screening by the trapped space charge the bias voltage should exceed 100(V) x [detector thickness/mm]2. Dark currents are of the order of the generation-recombination current, i.e., 300 pA/mm3 detector volume. With proper device design the signal height approaches the theoretical maximum of 0.2 A/W. This high responsivity, however, is not exploited in CT since the SNR is determined here by the incident quantum noise. As a consequence of the detrapping current, the response speed does not meet CT requirements. A medium-term effort for crystal growth appears necessary to achieve the required reduction of the trap density by an order of magnitude. Scintillation based detectors are, therefore, still preferred in fast operating medical diagnostic systems. PMID:9949396

  2. Imaging of Ra-223 with a small-pixel CdTe detector

    NASA Astrophysics Data System (ADS)

    Scuffham, J. W.; Pani, S.; Seller, P.; Sellin, P. J.; Veale, M. C.; Wilson, M. D.; Cernik, R. J.

    2015-01-01

    Ra-223 Dichloride (Xofigo™) is a promising new radiopharmaceutical offering survival benefit and palliation of painful bone metastases in patients with hormone-refractory prostate cancer [1]. The response to radionuclide therapy and toxicity are directly linked to the absorbed radiation doses to the tumour and organs at risk respectively. Accurate dosimetry necessitates quantitative imaging of the biodistribution and kinetics of the radiopharmaceutical. Although primarily an alpha-emitter, Ra-223 also has some low-abundance X-ray and gamma emissions, which enable imaging of the biodistribution in the patient. However, the low spectral resolution of conventional gamma camera detectors makes in-vivo imaging of Ra-223 challenging. In this work, we present spectra and image data of anthropomorphic phantoms containing Ra-223 acquired with a small-pixel CdTe detector (HEXITEC) [2] with a pinhole collimator. Comparison is made with similar data acquired using a clinical gamma camera. The results demonstrate the advantages of the solid state detector in terms of scatter rejection and quantitative accuracy of the images. However, optimised collimation is needed in order for the sensitivity to rival current clinical systems. As different dosage levels and administration regimens for this drug are explored in current clinical trials, there is a clear need to develop improved imaging technologies that will enable personalised treatments to be designed for patients.

  3. A 10 cm × 10 cm CdTe Spectroscopic Imaging Detector based on the HEXITEC ASIC

    NASA Astrophysics Data System (ADS)

    Wilson, M. D.; Dummott, L.; Duarte, D. D.; Green, F. H.; Pani, S.; Schneider, A.; Scuffham, J. W.; Seller, P.; Veale, M. C.

    2015-10-01

    The 250 μ m pitch 80x80 pixel HEXITEC detector systems have shown that spectroscopic imaging with an energy resolution of <1 keV FWHM per pixel can be readily achieved in the range of 5-200 keV with Al-pixel CdTe biased to -500 V. This level of spectroscopic imaging has a variety of applications but the ability to produce large area detectors remains a barrier to the adoption of this technology. The limited size of ASICs and defect free CdTe wafers dictates that building large area monolithic detectors is not presently a viable option. A 3-side buttable detector module has been developed to cover large areas with arrays of smaller detectors. The detector modules are 20.35 × 20.45 mm with CdTe bump bonded to the HEXITEC ASIC with coverage up to the edge of the module on three sides. The fourth side has a space of 3 mm to allow I/O wire bonds to be made between the ASIC and the edge of a PCB that routes the signals to a connector underneath the active area of the module. The detector modules have been assembled in rows of five modules with a dead space of 170 μ m between each module. Five rows of modules have been assembled in a staggered height array where the wire bonds of one row of modules are covered by the active detector area of a neighboring row. A data acquisition system has been developed to digitise, store and output the 24 Gbit/s data that is generated by the array. The maximum bias magnitude that could be applied to the CdTe detectors from the common voltage source was limited by the worst performing detector module. In this array of detectors a bias of -400 V was used and the detector modules had 93 % of pixels with better than 1.2 keV FWHM at 59.5 keV. An example of K-edge enhanced imaging for mammography was demonstrated. Subtracting images from the events directly above and below the K-edge of the Iodine contrast agent was able to extract the Iodine information from the image of a breast phantom and improve the contrast of the images. This is just

  4. Performance simulation of an x-ray detector for spectral CT with combined Si and Cd[Zn]Te detection layers.

    PubMed

    Herrmann, Christoph; Engel, Klaus-Jürgen; Wiegert, Jens

    2010-12-21

    The most obvious problem in obtaining spectral information with energy-resolving photon counting detectors in clinical computed tomography (CT) is the huge x-ray flux present in conventional CT systems. At high tube voltages (e.g. 140 kVp), despite the beam shaper, this flux can be close to 10⁹ Mcps mm⁻² in the direct beam or in regions behind the object, which are close to the direct beam. Without accepting the drawbacks of truncated reconstruction, i.e. estimating missing direct-beam projection data, a photon-counting energy-resolving detector has to be able to deal with such high count rates. Sub-structuring pixels into sub-pixels is not enough to reduce the count rate per pixel to values that today's direct converting Cd[Zn]Te material can cope with (≤ 10 Mcps in an optimistic view). Below 300 µm pixel pitch, x-ray cross-talk (Compton scatter and K-escape) and the effect of charge diffusion between pixels are problematic. By organising the detector in several different layers, the count rate can be further reduced. However this alone does not limit the count rates to the required level, since the high stopping power of the material becomes a disadvantage in the layered approach: a simple absorption calculation for 300 µm pixel pitch shows that the required layer thickness of below 10 Mcps/pixel for the top layers in the direct beam is significantly below 100 µm. In a horizontal multi-layer detector, such thin layers are very difficult to manufacture due to the brittleness of Cd[Zn]Te. In a vertical configuration (also called edge-on illumination (Ludqvist et al 2001 IEEE Trans. Nucl. Sci. 48 1530-6, Roessl et al 2008 IEEE NSS-MIC-RTSD 2008, Conf. Rec. Talk NM2-3)), bonding of the readout electronics (with pixel pitches below 100 µm) is not straightforward although it has already been done successfully (Pellegrini et al 2004 IEEE NSS MIC 2004 pp 2104-9). Obviously, for the top detector layers, materials with lower stopping power would be advantageous

  5. Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals

    NASA Astrophysics Data System (ADS)

    Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; De Geronimo, G.; Eger, J.; Emerick, A.; Fried, J.; Hossain, A.; Roy, U.; Salwen, C.; Soldner, S.; Vernon, E.; Yang, G.; James, R. B.

    2016-01-01

    Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm3 pixelated detectors, fabricated with conventional pixel patterns with progressively smaller pixel sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of the performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices.

  6. A simulation of a CdTe gamma ray detector based on collection efficiency profiles as determined by lateral IBIC

    NASA Astrophysics Data System (ADS)

    Vittone, E.; Fizzotti, F.; Lo Giudice, A.; Polesello, P.; Manfredotti, C.

    1999-06-01

    Collection efficiency profiles as determined by the ion beam-induced charge (IBIC) technique have been considered to evaluate the spectroscopic performance of a cadmium telluride (CdTe) nuclear radiation detector. The dependence of such profiles on the applied bias voltage and the shaping time are presented and discussed on the basis of a theoretical model, which is also used to evaluate the electron/hole collection lengths profiles. Experimental collection efficiency profiles were used as input data of the "ISIDE" Monte Carlo programme to simulate the CdTe response to gamma rays produced by 57Co. A systematic investigation of such spectra obtained under different detection conditions shows the effects of non constant collection efficiency profiles and ballistic deficit on the energy resolution of the detector.

  7. Development of a CdTe pixel detector with a window comparator ASIC for high energy X-ray applications

    NASA Astrophysics Data System (ADS)

    Hirono, T.; Toyokawa, H.; Furukawa, Y.; Honma, T.; Ikeda, H.; Kawase, M.; Koganezawa, T.; Ohata, T.; Sato, M.; Sato, G.; Takagaki, M.; Takahashi, T.; Watanabe, S.

    2011-09-01

    We have developed a photon-counting-type CdTe pixel detector (SP8-01). SP8-01 was designed as a prototype of a high-energy X-ray imaging detector for experiments using synchrotron radiation. SP8-01 has a CdTe sensor of 500 μm thickness, which has an absorption efficiency of almost 100% up to 50 keV and 45% even at 100 keV. A full-custom application specific integrated circuit (ASIC) was designed as a readout circuit of SP8-01, which is equipped with a window-type discriminator. The upper discriminator realizes a low-background measurement, because X-ray beams from the monochromator contain higher-order components beside the fundamental X-rays in general. ASIC chips were fabricated with a TSMC 0.25 μm CMOS process, and CdTe sensors were bump-bonded to the ASIC chips by a gold-stud bonding technique. Beam tests were performed at SPring-8. SP8-01 detected X-rays up to 120 keV. The capability of SP8-01 as an imaging detector for high-energy X-ray synchrotron radiation was evaluated with its performance characteristics.

  8. Design and optimization of large area thin-film CdTe detector for radiation therapy imaging applications

    SciTech Connect

    Parsai, E. Ishmael; Shvydka, Diana; Kang, Jun

    2010-08-15

    Purpose: The authors investigate performance of thin-film cadmium telluride (CdTe) in detecting high-energy (6 MV) x rays. The utilization of this material has become technologically feasible only in recent years due to significant development in large area photovoltaic applications. Methods: The CdTe film is combined with a metal plate, facilitating conversion of incoming photons into secondary electrons. The system modeling is based on the Monte Carlo simulations performed to determine the optimized CdTe layer thickness in combination with various converter materials. Results: The authors establish a range of optimal parameters producing the highest DQE due to energy absorption, as well as signal and noise spatial spreading. The authors also analyze the influence of the patient scatter on image formation for a set of detector configurations. The results of absorbed energy simulation are used in device operation modeling to predict the detector output signal. Finally, the authors verify modeling results experimentally for the lowest considered device thickness. Conclusions: The proposed CdTe-based large area thin-film detector has a potential of becoming an efficient low-cost electronic portal imaging device for radiation therapy applications.

  9. Drift time variations in CdZnTe detectors measured with alpha-particles: Their correlation with the detector’s responses

    SciTech Connect

    Bolotnikov A. E.; Butcher, J.; Hamade, M.; Petryk, M.; Bolotnikov, A.; Camarda, G.; Cui, Y.; Hossain, A.; Kim, K.; Yang, G.; and James, R.

    2012-05-14

    Homogeneity of properties related to material crystallinity is a critical parameter for achieving high-performance CdZnTe (CZT) radiation detectors. Unfortunately, this requirement is not always satisfied in today's commercial CZT material due to high concentrations of extended defects, in particular subgrain boundaries, which are believed to be part of the causes hampering the energy resolution and efficiency of CZT detectors. In the past, the effects of subgrain boundaries have been studied in Si, Ge and other semiconductors. It was demonstrated that subgrain boundaries tend to accumulate secondary phases and impurities causing inhomogeneous distributions of trapping centers. It was also demonstrated that subgrain boundaries result in local perturbations of the electric field, which affect the carrier transport and other properties of semiconductor devices. The subgrain boundaries in CZT material likely behave in a similar way, which makes them responsible for variations in the electron drift time and carrier trapping in CZT detectors. In this work, we employed the transient current technique to measure variations in the electron drift time and related the variations to the device performances and subgrain boundaries, whose presence in the crystals were confirmed with white beam X-ray diffraction topography and infrared transmission microscopy.

  10. Monte Carlo simulation of the response functions of CdTe detectors to be applied in x-ray spectroscopy.

    PubMed

    Tomal, A; Santos, J C; Costa, P R; Lopez Gonzales, A H; Poletti, M E

    2015-06-01

    In this work, the energy response functions of a CdTe detector were obtained by Monte Carlo (MC) simulation in the energy range from 5 to 160keV, using the PENELOPE code. In the response calculations the carrier transport features and the detector resolution were included. The computed energy response function was validated through comparison with experimental results obtained with (241)Am and (152)Eu sources. In order to investigate the influence of the correction by the detector response at diagnostic energy range, x-ray spectra were measured using a CdTe detector (model XR-100T, Amptek), and then corrected by the energy response of the detector using the stripping procedure. Results showed that the CdTe exhibits good energy response at low energies (below 40keV), showing only small distortions on the measured spectra. For energies below about 80keV, the contribution of the escape of Cd- and Te-K x-rays produce significant distortions on the measured x-ray spectra. For higher energies, the most important correction is the detector efficiency and the carrier trapping effects. The results showed that, after correction by the energy response, the measured spectra are in good agreement with those provided by a theoretical model of the literature. Finally, our results showed that the detailed knowledge of the response function and a proper correction procedure are fundamental for achieving more accurate spectra from which quality parameters (i.e., half-value layer and homogeneity coefficient) can be determined. PMID:25599872

  11. K-edge imaging with the XPAD3 hybrid pixel detector, direct comparison of CdTe and Si sensors

    NASA Astrophysics Data System (ADS)

    Cassol, F.; Portal, L.; Graber-Bolis, J.; Perez-Ponce, H.; Dupont, M.; Kronland, C.; Boursier, Y.; Blanc, N.; Bompard, F.; Boudet, N.; Buton, C.; Clémens, J. C.; Dawiec, A.; Debarbieux, F.; Delpierre, P.; Hustache, S.; Vigeolas, E.; Morel, C.

    2015-07-01

    We investigate the improvement from the use of high-Z CdTe sensors for pre-clinical K-edge imaging with the hybrid pixel detectors XPAD3. We compare XPAD3 chips bump bonded to Si or CdTe sensors in identical experimental conditions. Image performance for narrow energy bin acquisitions and contrast-to-noise ratios of K-edge images are presented and compared. CdTe sensors achieve signal-to-noise ratios at least three times higher than Si sensors within narrow energy bins, thanks to their much higher detection efficiency. Nevertheless Si sensors provide better contrast-to-noise ratios in K-edge imaging when working at equivalent counting statistics, due to their better estimation of the attenuation coefficient of the contrast agent. Results are compared to simulated data in the case of the XPAD3/Si detector. Good agreement is observed when including charge sharing between pixels, which have a strong impact on contrast-to-noise ratios in K-edge images.

  12. K-edge imaging with the XPAD3 hybrid pixel detector, direct comparison of CdTe and Si sensors.

    PubMed

    Cassol, F; Portal, L; Graber-Bolis, J; Perez-Ponce, H; Dupont, M; Kronland, C; Boursier, Y; Blanc, N; Bompard, F; Boudet, N; Buton, C; Clémens, J C; Dawiec, A; Debarbieux, F; Delpierre, P; Hustache, S; Vigeolas, E; Morel, C

    2015-07-21

    We investigate the improvement from the use of high-Z CdTe sensors for pre-clinical K-edge imaging with the hybrid pixel detectors XPAD3. We compare XPAD3 chips bump bonded to Si or CdTe sensors in identical experimental conditions. Image performance for narrow energy bin acquisitions and contrast-to-noise ratios of K-edge images are presented and compared. CdTe sensors achieve signal-to-noise ratios at least three times higher than Si sensors within narrow energy bins, thanks to their much higher detection efficiency. Nevertheless Si sensors provide better contrast-to-noise ratios in K-edge imaging when working at equivalent counting statistics, due to their better estimation of the attenuation coefficient of the contrast agent. Results are compared to simulated data in the case of the XPAD3/Si detector. Good agreement is observed when including charge sharing between pixels, which have a strong impact on contrast-to-noise ratios in K-edge images. PMID:26133567

  13. Estimation of mammary gland composition using CdTe series detector developed for photon-counting mammography

    NASA Astrophysics Data System (ADS)

    Ihori, Akiko; Okamoto, Chizuru; Yamakawa, Tsutomu; Yamamoto, Shuichiro; Okada, Masahiro; Nakajima, Ai; Kato, Misa; Kodera, Yoshie

    2016-03-01

    Energy resolved photon-counting mammography is a new technology, which counts the number of photons that passes through an object, and presents it as a pixel value in an image of the object. Silicon semiconductor detectors are currently used in commercial mammography. However, the disadvantage of silicon is the low absorption efficiency for high X-ray energies. A cadmium telluride (CdTe) series detector has a high absorption efficiency over a wide energy range. In this study, we proposed a method to estimate the composition of the mammary gland using a CdTe series detector as a photon-counting detector. The fact that the detection rate of breast cancer in mammography is affected by mammary gland composition is now widely accepted. Assessment of composition of the mammary gland has important implications. An important advantage of our proposed technique is its ability to discriminate photons using three energy bins. We designed the CdTe series detector system using the MATLAB simulation software. The phantom contains nine regions with the ratio of glandular tissue and adipose varying in increments of 10%. The attenuation coefficient for each bin's energy was calculated from the number of input and output photons possessed by each. The evaluation results obtained by plotting the attenuation coefficient μ in a three-dimensional (3D) scatter plot show that the plots had a regular composition order congruent with that of the mammary gland. Consequently, we believe that our proposed method can be used to estimate the composition of the mammary gland.

  14. Characterization measurement of a thick CdTe detector for BNCT-SPECT - detection efficiency and energy resolution.

    PubMed

    Murata, Isao; Nakamura, Soichiro; Manabe, Masanobu; Miyamaru, Hiroyuki; Kato, Itsuro

    2014-06-01

    Author׳s group is carrying out development of BNCT-SPECT with CdTe device, which monitors the therapy effect of BNCT in real-time. From the design calculations, the dimensions were fixed to 1.5×2×30mm(3). For the collimator it was confirmed that it would have a good spatial resolution and simultaneously the number of counts would be acceptably large. After producing the CdTe crystal, the characterization measurement was carried out. For the detection efficiency an excellent agreement between calculation and measurement was obtained. Also, the detector has a very good energy resolution so that gamma-rays of 478keV and 511keV could be distinguished in the spectrum. PMID:24581600

  15. Development of a simplified simulation model for performance characterization of a pixellated CdZnTe multimodality imaging system.

    PubMed

    Guerra, P; Santos, A; Darambara, D G

    2008-02-21

    Current requirements of molecular imaging lead to the complete integration of complementary modalities in a single hybrid imaging system to correlate function and structure. Among the various existing detector technologies, which can be implemented to integrate nuclear modalities (PET and/or single-photon emission computed tomography with x-rays (CT) and most probably with MR, pixellated wide bandgap room temperature semiconductor detectors, such as CdZnTe and/or CdTe, are promising candidates. This paper deals with the development of a simplified simulation model for pixellated semiconductor radiation detectors, as a first step towards the performance characterization of a multimodality imaging system based on CdZnTe. In particular, this work presents a simple computational model, based on a 1D approximate solution of the Schockley-Ramo theorem, and its integration into the Geant4 application for tomographic emission (GATE) platform in order to perform accurately and, therefore, improve the simulations of pixellated detectors in different configurations with a simultaneous cathode and anode pixel readout. The model presented here is successfully validated against an existing detailed finite element simulator, the multi-geometry simulation code, with respect to the charge induced at the anode, taking into consideration interpixel charge sharing and crosstalk, and to the detector charge induction efficiency. As a final point, the model provides estimated energy spectra and time resolution for (57)Co and (18)F sources obtained with the GATE code after the incorporation of the proposed model. PMID:18263961

  16. DPIX, an assembly of 6400 CdTe detectors for gamma-ray bursts detection with ECLAIRs

    NASA Astrophysics Data System (ADS)

    Remoué, N.; Barret, D.; Mandrou, P.; Lacombe, K.; Pons, R.; Amoros, C.; Landé, J.; Rambaud, D.; Dezalay, J. P.; Narbonne, J.; Soulié, Y.; Marty, W.; Ramon, P.; Rouaix, G.; Houret, B.; Limousin, O.; Gevin, O.; Lugiez, F.; Penquer, A.

    2008-07-01

    The French instrument ECLAIRs, to be part of the French and Chinese SVOM mission for the study of gamma-ray bursts (GRBs), will detect bursts between 4 and 250 keV. Its detector plane is an assembly of 200 elementary detection modules (XRDPIX) equipped with 32 Schottky CdTe detectors, produced by ACRORAD in Japan. The innovative concept of XRDPIX will enable a 4 keV low-energy threshold to be achieved. After introducing the SVOM payload, the ECLAIRs instrument and its detector plane, this paper presents the results of the performance evaluation of a first set of 500 detectors, and briefly describes the tests foreseen for the first XRDPIX prototypes.

  17. Performance and qualification of CdTe pixel detectors for the Spectrometer/Telescope for Imaging X-rays

    NASA Astrophysics Data System (ADS)

    Grimm, O.; Bednarzik, M.; Birrer, G.; Arnold, N.; Commichau, V.; Hurford, G.; Krucker, S.; Limousin, O.; Meuris, A.

    2015-02-01

    The Spectrometer/Telescope for Imaging X-rays (STIX) is a remote sensing instrument on-board the ESA Solar Orbiter spacecraft. STIX is designated to the study of energetic phenomena in solar flares. A Fourier-imaging technique using tungsten grid collimators in front of CdTe pixel detectors is employed, covering the 4 to 150 keV energy range with a full-width-half maximum resolution around 1 keV at low energies. Acrorad CdTe detectors of 1 mm thickness with a planar aluminum Schottky contact are used as basis for a subsequent patterning process into eight large pixels, four small pixels, and a guard ring. The patterning is done by means of microfabrication technologies. The area of the patterned sensor is 10×10 mm2. Test equipment has been developed for selecting the detectors with best performance prior to integration with the read-out system, and for qualification purposes. The set-up allows pixel-based dark current measurements at low temperatures. Pixel dark currents below 60 pA are needed to avoid excess noise in the read-out ASIC. The best pixels show dark currents below 10 pA at 300 V bias and -20 °C. Spectroscopic measurements with 133Ba sources confirm the good performance. This paper briefly explains the mission context of the CdTe detectors and then gives details of the production and testing procedures. Typical results are shown, with emphasis on performance degradation studies from displacement damage by proton irradiation. This is expected to be the dominant degradation mechanism for this application.

  18. Discrimination between normal breast tissue and tumor tissue using CdTe series detector developed for photon-counting mammography

    NASA Astrophysics Data System (ADS)

    Okamoto, Chizuru; Ihori, Akiko; Yamakawa, Tsutomu; Yamamoto, Shuichiro; Okada, Masahiro; Kato, Misa; Nakajima, Ai; Kodera, Yoshie

    2016-03-01

    We propose a new mammography system using a cadmium telluride (CdTe) series photon-counting detector, having high absorption efficiency over a wide energy range. In a previous study, we showed that the use of high X-ray energy in digital mammography is useful from the viewpoint of exposure dose and image quality. In addition, the CdTe series detector can acquire X-ray spectrum information following transmission through a subject. This study focused on the tissue composition identified using spectral information obtained by a new photon-counting detector. Normal breast tissue consists entirely of adipose and glandular tissues. However, it is very difficult to find tumor tissue in the region of glandular tissue via a conventional mammogram, especially in dense breast because the attenuation coefficients of glandular tissue and tumor tissue are very close. As a fundamental examination, we considered a simulation phantom and showed the difference between normal breast tissue and tumor tissue of various thicknesses in a three-dimensional (3D) scatter plot. We were able to discriminate between both types of tissues. In addition, there was a tendency for the distribution to depend on the thickness of the tumor tissue. Thinner tumor tissues were shown to be closer in appearance to normal breast tissue. This study also demonstrated that the difference between these tissues could be made obvious by using a CdTe series detector. We believe that this differentiation is important, and therefore, expect this technology to be applied to new tumor detection systems in the future.

  19. Design of a high-resolution small-animal SPECT-CT system sharing a CdTe semiconductor detector

    NASA Astrophysics Data System (ADS)

    Ryu, Hyun-Ju; Lee, Young-Jin; Lee, Seung-Wan; Cho, Hyo-Min; Choi, Yu-Na; Kim, Hee-Joung

    2012-07-01

    A single photon emission computed tomography (SPECT) system with a co-registered X-y computed tomography (CT) system allows the convergence of functional information and morphologic information. The localization of radiopharmaceuticals on a SPECT can be enhanced by combining the SPECT with an anatomical modality, such as X-ray CT. Gamma-ray imaging for nuclear medicine devices and X-ray imaging systems for diagnostics has recently been developed based on semiconductor detectors, and semiconductor detector materials such as cadmium telluride (CdTe) or cadmium zinc telluride (CZT) are available for both X-ray and gamma-ray systems for small-animal imaging. CdTe or CZT detectors provide strong absorption and high detection efficiency of high energy X-ray and gamma-ray photons because of their large atomic numbers. In this study, a pinhole collimator SPECT system sharing a cadmium telluride (CdTe) detector with a CT was designed. The GEANT4 application for tomographic emission (GATE) v.6.1 was used for the simulation. The pinhole collimator was designed to obtain a high spatial resolution of the SPECT system. The acquisition time for each projection was 40 seconds, and 60 projections were obtained for tomographic image acquisition. The reconstruction was performed using ordered subset expectation maximization (OS-EM) algorithms. The sensitivity and the spatial resolution were measured on the GATE simulation to evaluate the system characteristics. The spatial resolution of the system calculated from the FWHM of Gaussian fitted PSF curve was 0.69 mm, and the sensitivity of the system was measured to be 0.354 cps/kBq by using a Tc-99m point source of 1 MBq for 800 seconds. A phantom study was performed to verify the design of the dual imaging modality system. The system will be built as designed, and it can be applied as a pre-clinical imaging system.

  20. Hard-X and gamma-ray imaging detector for astrophysics based on pixelated CdTe semiconductors

    NASA Astrophysics Data System (ADS)

    Gálvez, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Ullán, M.; Lozano, M.; Pellegrini, G.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2016-01-01

    Stellar explosions are astrophysical phenomena of great importance and interest. Instruments with high sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators. In order to achieve the needed performance, a hard-X and gamma-ray imaging detector with mm spatial resolution and large enough efficiency is required. We present a detector module which consists of a single CdTe crystal of 12.5 × 12.5mm 2 and 2mm thick with a planar cathode and with the anode segmented in an 11x11 pixel array with a pixel pitch of 1 mm attached to the readout chip. Two possible detector module configurations are considered: the so-called Planar Transverse Field (PTF) and the Parallel Planar Field (PPF). The combination of several modules in PTF or PPF configuration will achieve the desired performance of the imaging detector. The sum energy resolution of all pixels of the CdTe module measured at 122 keV and 356 keV is 3.8% and 2% respectively, in the following operating conditions: PPF irradiation, bias voltage -500 V and temperature -10̂ C.

  1. Performance of CdTe gamma-ray detectors fabricated in a new M π n design

    NASA Astrophysics Data System (ADS)

    Niraula, M.; Mochizuki, D.; Aoki, T.; Tomita, Y.; Hatanaka, Y.

    2000-06-01

    CdTe radiation detectors have been fabricated in a new M-π-n structure that provides very effective blocking for the leakage current and, as a result, excellent spectral responses are achieved. An iodine-doped n-CdTe layer was grown on the Te-faces of the (1 1 1)-oriented high-resistivity (˜10 9 Ω cm) ρ-type CdTe wafers at the low substrate temperature of 150°C. An aluminum electrode was evaporated on the n-CdTe side, while a gold electrode was evaporated on the other side. Low leakage current around 60 pA/mm 2 was typically attained for a 0.5 mm thick detector at room-temperature (25°C) for an applied reverse bias of 250 V. Improved charge collection efficiency and spectral responses for different radioisotopes in the energy range of a few tens of keV to several hundreds of keV were obtained due to the application of very large electric fields on the detectors. The performance of the detectors thus fabricated is presented.

  2. Overcoming Zn segregation in CdZnTe with the temperature gradient annealing

    NASA Astrophysics Data System (ADS)

    Kim, K.; Bolotnikov, A. E.; Camarda, G. S.; Hossain, A.; James, R. B.

    2016-05-01

    The availability of large volume crystals with the same energy gap in melt-grown CdZnTe (CZT) is restricted due to the Zn segregation in CdTe hosts. We observed the migration of Zn in the solid phase along the positive temperature gradient direction both in situ and post-growth temperature gradient annealing (TGA) of CZT. Diffusivity of Zn obtained from the in situ TGA was approximately 10-5 cm2/s order and completely different mechanism with that of post-growth. The CZT ingots obtained through in situ TGA have uniform Zn and resistivity of 1010 Ω cm orders. The CZT detectors fabricated from in situ TGA applied ingots exhibit 10% of energy resolution for 59.5 keV peak of 241Am.

  3. Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

    NASA Astrophysics Data System (ADS)

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-06-01

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 μm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions.

  4. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

    DOE PAGESBeta

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Guiseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-02-11

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an ordermore » of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.« less

  5. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

    SciTech Connect

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Guiseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-02-11

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.

  6. Signal formation on a serpentine delay-line electrode patterned on the CdZnTe detector

    NASA Astrophysics Data System (ADS)

    Kim, Geehyun; Karbowski, Joseph; Hammig, Mark D.

    2011-10-01

    Delay-line electrodes can simplify the readout hardware and reduce the power requirements of a nuclear radiation detector by replacing dozens or hundreds of readout circuits with only one or two time-sensitive readouts per detector face. The simplified means of lateral position-sensing with micrometer-range resolution was previously validated upon high-resistivity silicon, with the ultimate goal of mapping the recoil electrons from gamma-ray events, thereby increasing the angular resolution of gamma-cameras. However, the effect of the induced current on non-collecting legs of the meander pattern was not evaluated, a deficiency addressed in this paper, in which a Cd 0.9Zn 0.1Te (CZT) bulk crystal was used as the substrate. We present simulations of: (1) the electric field distribution, as calculated with MAXWELL ® 12.0, within the CZT detector with the delay-line electrode, (2) the charge carrier drift motion within the semiconductor, and (3) the propagation of the induced charge signal along the meandering electrode pattern. CZT detectors purchased from ORBOTECH were reprocessed for studying various metal-semiconductor contacts, and with optimized interfaces, the fabrication of the delay-line electrode was performed using photolithographic processes in the Lurie Nanofabrication Facility in the University of Michigan. Current-voltage ( I- V) characteristic curves were obtained for performance evaluation and compared with pre-processing data. Readout circuits were connected to the fabricated CZT detector to test the lateral position-sensing, and the overlay design used to balance the transmission line electrode is discussed.

  7. Performance of a 6 mm thick CdTe detector for 166 keV gamma rays

    NASA Astrophysics Data System (ADS)

    McKee, B. T. A.; Goetz, T.; Hazlett, T.; Forkert, L.

    1988-11-01

    In order to extend the utility of CdTe detectors to higher gamma ray energies, yet avoid increasing the charge collection problems of thick detectors, a 6 mm thick detector configuration has been developed consisting of three crystals 2 mm thick and of 16 mm diameter. The active volume is over 1.0 cm 3. The performance of this detector has been evaluated for gamma rays of 166 keV energy by measuring the pulse height spectra and determining the intrinsic peak and total efficiencies over a range of bias voltages and amplifier time constants. A maximum peak and total efficiency of 41% and 80% were obtained with 200 V bias and 2 μs amplifier time constant, although under these conditions the noise width was almost 40 keV FWHM. A Monte Carlo model was used to simulate the gamma ray and electron interaction in this 6 mm detector. Charge collection, including trapping effects, was incorporated into the model. The model pulse height spectra could be approximately matched to the measured data using hole and electron effective mobility values of 60 and 600 cm 2/V s, and hole and electron mean trapping times of 25 and 15 μs. Our findings indicate that detectors such as this will not be useful for high resolution spectroscopic applications, but the high gamma ray stopping power will be of interest for applications where the noise width is acceptable. Results from the modelling imply that in this detector shallow trapping sites (reducing the effective mobility) are more important than deep trapping sites in contributing to incomplete charge collection.

  8. OPTIMIZATION OF VIRTUAL FRISCH-GRID CdZnTe DETECTOR DESIGNS FOR IMAGING AND SPECTROSCOPY OF GAMMA RAYS.

    SciTech Connect

    BOLOTNIKOV,A.E.; ABDUL-JABBAR, N.M.; BABALOLA, S.; CAMARDA, G.S.; CUI, Y.; HOSSAIN, A.; JACKSON, E.; JACKSON, H.; JAMES, J.R.; LURYI, A.L.; JAMES, R.B.

    2007-08-21

    In the past, various virtual Frisch-grid designs have been proposed for cadmium zinc telluride (CZT) and other compound semiconductor detectors. These include three-terminal, semi-spherical, CAPture, Frisch-ring, capacitive Frisch-grid and pixel devices (along with their modifications). Among them, the Frisch-grid design employing a non-contacting ring extended over the entire side surfaces of parallelepiped-shaped CZT crystals is the most promising. The defect-free parallelepiped-shaped crystals with typical dimensions of 5x5{approx}12 mm3 are easy to produce and can be arranged into large arrays used for imaging and gamma-ray spectroscopy. In this paper, we report on further advances of the virtual Frisch-grid detector design for the parallelepiped-shaped CZT crystals. Both the experimental testing and modeling results are described.

  9. Optimization of virtual Frisch-grid CdZnTe detector designs for imaging and spectroscopy of gamma rays

    NASA Astrophysics Data System (ADS)

    Bolotnikov, A. E.; Abdul-Jabbar, N. M.; Babalola, S.; Camarda, G. S.; Cui, Y.; Hossain, A.; Jackson, E.; Jackson, H.; James, J. R.; Luryi, A. L.; James, R. B.

    2007-09-01

    In the past, various virtual Frisch-grid designs have been proposed for cadmium zinc telluride (CZT) and other compound semiconductor detectors. These include three-terminal, semi-spherical, CAPture, Frisch-ring, capacitive Frisch-grid and pixel devices (along with their modifications). Among them, the Frisch-grid design employing a non-contacting ring extended over the entire side surfaces of parallelepiped-shaped CZT crystals is the most promising. The defect-free parallelepiped-shaped crystals with typical dimensions of 5x5x12 mm3 are easy to produce and can be arranged into large arrays used for imaging and gamma-ray spectroscopy. In this paper, we report on further advances of the virtual Frisch-grid detector design for the parallelepiped-shaped CZT crystals. Both the experimental testing and modelling results are described.

  10. Development of High Resolution Mirrors and Cd-Zn-Te Detectors for Hard X-ray Astronomy

    NASA Technical Reports Server (NTRS)

    Ramsey, Brian D.; Speegle, Chet O.; Gaskin, Jessica; Sharma, Dharma; Engelhaupt, Darell; Six, N. Frank (Technical Monitor)

    2002-01-01

    We describe the fabrication and implementation of a high-resolution conical, grazing- incidence, hard X-ray (20-70 keV) telescope. When flown aboard stratospheric balloons, these mirrors are used to image cosmic sources such as supernovae, neutron stars, and quasars. The fabrication process involves generating super-polished mandrels, mirror shell electroforming, and mirror testing. The cylindrical mandrels consist of two conical segments; each segment is approximately 305 mm long. These mandrels are first, precision ground to within approx. 1.0 micron straightness along each conical segment and then lapped and polished to less than 0.5 micron straightness. Each mandrel segment is the super-polished to an average surface roughness of approx. 3.25 angstrom rms. By mirror shell replication, this combination of good figure and low surface roughness has enabled us to achieve 15 arcsec, confirmed by X-ray measurements in the Marshall Space Flight Center 102 meter test facility. To image the focused X-rays requires a focal plane detector with appropriate spatial resolution. For 15 arcsec optics of 6 meter focal length, this resolution must be around 200 microns. In addition, the detector must have a high efficiency, relatively high energy resolution, and low background. We are currently developing Cadmium-Zinc-Telluride fine-pixel detectors for this purpose. The detectors under study consist of a 16x16 pixel array with a pixel pitch of 300 microns and are 1 mm and 2 mm thick. At 60 keV, the measured energy resolution is around 2%.

  11. The theoretical calculation of the phase diagram of infrared detector materials (Hg,Zn)Te and (Cd,Zn)Te

    NASA Astrophysics Data System (ADS)

    Li, Chi; Huang, Xingliang

    1989-05-01

    A technique for constructing the phase diagrams of Te-based pseudobinary IR detector materials on the basis of thermodynamics theory is described and demonstrated. The fundamental principles of the segregation-coefficient and shape-statement methods are reviewed; the computational procedure is explained; and results are presented for HgTe-ZnTe and CdTe-ZnTe. The temperatures in the diagrams are found to be within 0.6 and 15 C, respectively, of the experimentally measured values.

  12. Effect of electron transport properties on unipolar CdZnTe radiation detectors: LUND, SpectrumPlus, and Coplanar Grid

    SciTech Connect

    Ralph B. James

    2000-01-07

    Device simulations of (1) the laterally-contacted-unipolar-nuclear detector (LUND), (2) the SpectrumPlus, (3) and the coplanar grid made of Cd{sub 0.9}Zn{sub 0.1}Te (CZT) were performed for {sup 137}Cs irradiation by 662.15 keV gamma-rays. Realistic and controlled simulations of the gamma-ray interactions with the CZT material were done using the MCNP4B2 Monte Carlo program, and the detector responses were simulated using the Sandia three-dimensional multielectrode simulation program (SandTMSP). The simulations were done for the best and the worst expected carrier nobilities and lifetimes of currently commercially available CZT materials for radiation detector applications. For the simulated unipolar devices, the active device volumes were relatively large and the energy resolutions were fairly good, but these performance characteristics were found to be very sensitive to the materials properties. The internal electric fields, the weighting potentials, and the charge induced efficiency maps were calculated to give insights into the operation of these devices.

  13. Two CdZnTe Detector-Equipped Gamma-ray Spectrometers for Attribute Measurements on Irradiated Nuclear Fuel

    SciTech Connect

    Hartwell, John Kelvin; Winston, Philip Lon; Marts, Donna Jeanne; Moore-McAteer, Lisa Dawn; Taylor, Steven Cheney

    2003-04-01

    Some United States Department of Energy-owned spent fuel elements from foreign research reactors (FRRs) are presently being shipped from the reactor location to the US for storage at the Idaho National Engineering and Environmental Laboratory (INEEL). Two cadmium zinc telluride detector-based gamma-ray spectrometers have been developed to confirm the irradiation status of these fuels. One spectrometer is configured to operate underwater in the spent fuel pool of the shipping location, while the other is configured to interrogate elements on receipt in the dry transfer cell at the INEEL’s Interim Fuel Storage Facility (IFSF). Both units have been operationally tested at the INEEL.

  14. Energy Calibration of a CdTe Photon Counting Spectral Detector with Consideration of its Non-Convergent Behavior

    PubMed Central

    Lee, Jeong Seok; Kang, Dong-Goo; Jin, Seung Oh; Kim, Insoo; Lee, Soo Yeol

    2016-01-01

    Fast and accurate energy calibration of photon counting spectral detectors (PCSDs) is essential for their biomedical applications to identify and characterize bio-components or contrast agents in tissues. Using the x-ray tube voltage as a reference for energy calibration is known to be an efficient method, but there has been no consideration in the energy calibration of non-convergent behavior of PCSDs. We observed that a single pixel mode (SPM) CdTe PCSD based on Medipix-2 shows some non-convergent behaviors in turning off the detector elements when a high enough threshold is applied to the comparator that produces a binary photon count pulse. More specifically, the detector elements are supposed to stop producing photon count pulses once the threshold reaches a point of the highest photon energy determined by the tube voltage. However, as the x-ray exposure time increases, the threshold giving 50% of off pixels also increases without converging to a point. We established a method to take account of the non-convergent behavior in the energy calibration. With the threshold-to-photon energy mapping function established by the proposed method, we could better identify iodine component in a phantom consisting of iodine and other components. PMID:27077856

  15. Energy Calibration of a CdTe Photon Counting Spectral Detector with Consideration of its Non-Convergent Behavior.

    PubMed

    Lee, Jeong Seok; Kang, Dong-Goo; Jin, Seung Oh; Kim, Insoo; Lee, Soo Yeol

    2016-01-01

    Fast and accurate energy calibration of photon counting spectral detectors (PCSDs) is essential for their biomedical applications to identify and characterize bio-components or contrast agents in tissues. Using the x-ray tube voltage as a reference for energy calibration is known to be an efficient method, but there has been no consideration in the energy calibration of non-convergent behavior of PCSDs. We observed that a single pixel mode (SPM) CdTe PCSD based on Medipix-2 shows some non-convergent behaviors in turning off the detector elements when a high enough threshold is applied to the comparator that produces a binary photon count pulse. More specifically, the detector elements are supposed to stop producing photon count pulses once the threshold reaches a point of the highest photon energy determined by the tube voltage. However, as the x-ray exposure time increases, the threshold giving 50% of off pixels also increases without converging to a point. We established a method to take account of the non-convergent behavior in the energy calibration. With the threshold-to-photon energy mapping function established by the proposed method, we could better identify iodine component in a phantom consisting of iodine and other components. PMID:27077856

  16. Characterization of high-resistivity CdTe and Cd0.9Zn0.1Te crystals grown by Bridgman method for radiation detector applications

    NASA Astrophysics Data System (ADS)

    Mandal, Krishna C.; Krishna, Ramesh M.; Pak, Rahmi O.; Mannan, Mohammad A.

    2014-09-01

    CdTe and Cd0.9Zn0.1Te (CZT) crystals have been studied extensively for various applications including x- and γ-ray imaging and high energy radiation detectors. The crystals were grown from zone refined ultra-pure precursor materials using a vertical Bridgman furnace. The growth process has been monitored, controlled, and optimized by a computer simulation and modeling program developed in our laboratory. The grown crystals were thoroughly characterized after cutting wafers from the ingots and processed by chemo-mechanical polishing (CMP). The infrared (IR) transmission images of the post-treated CdTe and CZT crystals showed average Te inclusion size of ~10 μm for CdTe and ~8 μm for CZT crystal. The etch pit density was ≤ 5×104 cm-2 for CdTe and ≤ 3×104 cm-2 for CZT. Various planar and Frisch collar detectors were fabricated and evaluated. From the current-voltage measurements, the electrical resistivity was estimated to be ~ 1.5×1010 Ω-cm for CdTe and 2-5×1011 Ω-cm for CZT. The Hecht analysis of electron and hole mobility-lifetime products (μτe and μτh) showed μτe = 2×10-3 cm2/V (μτh = 8×10-5 cm2/V) and 3-6×10-3 cm2/V (μτh = 4- 6×10-5 cm2/V) for CdTe and CZT, respectively. Detectors in single pixel, Frisch collar, and coplanar grid geometries were fabricated. Detectors in Frisch grid and guard-ring configuration were found to exhibit energy resolution of 1.4% and 2.6 %, respectively, for 662 keV gamma rays. Assessments of the detector performance have been carried out also using 241Am (60 keV) showing energy resolution of 4.2% FWHM.

  17. Digital performance improvements of a CdTe pixel detector for high flux energy-resolved X-ray imaging

    NASA Astrophysics Data System (ADS)

    Abbene, L.; Gerardi, G.; Principato, F.

    2015-03-01

    Photon counting detectors with energy resolving capabilities are desired for high flux X-ray imaging. In this work, we present the performance of a pixelated Schottky Al/p-CdTe/Pt detector (4×4) coupled to a custom-designed digital readout electronics for high flux measurements. The detector (4×4×2 mm3) has an anode layout based on an array of 16 pixels with a geometric pitch of 1 mm (pixel size of 0.6 mm). The 4-channel readout electronics is able to continuously digitize and process the signals from each pixel, performing multi-parameter analysis (event arrival time, pulse shape, pulse height, pulse time width, etc.) even at high fluxes and at different throughput and energy resolution conditions. The spectroscopic response of the system to monochromatic X-ray sources, at both low and high rates, is presented with particular attention to the mitigation of some typical spectral distortions (pile-up, baseline shifts and charge sharing). At a photon counting rate of 520 kcps/pixel, the system exhibits an energy resolution (FWHM at 59.5 keV) of 4.6%, 7.1% and 9% at throughputs of 0.9%, 16% and 82%, respectively. Measurements of Ag-target X-ray spectra also show the ability of the system to perform accurate estimation of the input counting rate up to 1.1 Mcps/pixel. The aim of this work is to point out, beside the appealing properties of CdTe detectors, the benefits of the digital approach in the development of high-performance energy resolved photon counting (ERPC) systems for high flux X-ray imaging.

  18. A 2D 4×4 Channel Readout ASIC for Pixelated CdTe Detectors for Medical Imaging Applications

    PubMed Central

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Martínez, Ricardo; Puigdengoles, Carles

    2015-01-01

    We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4 × 4 pixel array ROIC is the proof of concept of the 10 × 10 pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), configuration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, five global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and occupies an area of 5.3 mm × 6.8 mm. The TDC shows a resolution of 95.5 ps, a precision of 600 ps at full width half maximum (FWHM), and a power consumption of 130 μW. In acquisition mode, the total power consumption of every pixel is 200 μW. An equivalent noise charge (ENC) of 160 e−RMS at maximum gain and negative polarity conditions has been measured at room temperature. PMID:26744545

  19. Photon counting X-ray imaging with CdTe pixel detectors based on XPAD2 circuit

    NASA Astrophysics Data System (ADS)

    Franchi, Romain; Glasser, Francis; Gasse, Adrien; Clemens, Jean-Claude

    2006-07-01

    A semiconductor hybrid pixel detector for photon counting X-ray imaging has been developed and tested under radiation. The sensor is based on recent uniform CdTe single crystal associated with XPAD 2 counting chip via innovative processes of interconnection. The building detector is 1 mm thick, with an area of 1 cm 2 and consists of 600 square pixels cells 330 μm side. The readout chip working in electron collection mode is capable of setting homogeneous threshold with only a dispersion of 730 e -. Maximum noise level has been evaluated around 15 keV. First experiments under X-rays demonstrate a very good efficiency of detection. Moreover, imaging system allows excellent linearity over a large-scale achieving count rate of 3×10 6 photons/s/mm 2. Spectrometric measurements point up the system potential in multi-energies applications by locating and resolving X-rays lines of 241Am and 57Co sources.

  20. An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras

    DOE PAGESBeta

    Bolotnikov, A. E.; Ackley, K.; Camarda, G. S.; Cherches, C.; Cui, Y.; De Geronimo, G.; Fried, J.; Hodges, D.; Hossain, A.; Lee, W.; et al

    2015-07-28

    We developed a robust and low-cost array of virtual Frisch-grid CdZnTe (CZT) detectors coupled to a front-end readout ASIC for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6x6x15 mm3 detectors grouped into 3x3 sub-arrays of 2x2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readout electronics.more » The further enhancement of the arrays’ performance and reduction of their cost are made possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.« less

  1. An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras

    SciTech Connect

    Bolotnikov, A. E.; Ackley, K.; Camarda, G. S.; Cherches, C.; Cui, Y.; De Geronimo, G.; Fried, J.; Hodges, D.; Hossain, A.; Lee, W.; Mahler, G.; Maritato, M.; Petryk, M.; Roy, U.; Salwen, C.; Vernon, E.; Yang, G.; James, R. B.

    2015-07-28

    We developed a robust and low-cost array of virtual Frisch-grid CdZnTe (CZT) detectors coupled to a front-end readout ASIC for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6x6x15 mm3 detectors grouped into 3x3 sub-arrays of 2x2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readout electronics. The further enhancement of the arrays’ performance and reduction of their cost are made possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.

  2. An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras

    SciTech Connect

    Bolotnikov, A. E. Ackley, K.; Camarda, G. S.; Cherches, C.; Cui, Y.; De Geronimo, G.; Fried, J.; Hossain, A.; Mahler, G.; Maritato, M.; Roy, U.; Salwen, C.; Vernon, E.; Yang, G.; James, R. B.; Hodges, D.; Lee, W.; Petryk, M.

    2015-07-15

    We developed a robust and low-cost array of virtual Frisch-grid CdZnTe detectors coupled to a front-end readout application-specific integrated circuit (ASIC) for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6 × 6 × 15 mm{sup 3} detectors grouped into 3 × 3 sub-arrays of 2 × 2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readout electronics. The further enhancement of the arrays’ performance and reduction of their cost are possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.

  3. An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras.

    PubMed

    Bolotnikov, A E; Ackley, K; Camarda, G S; Cherches, C; Cui, Y; De Geronimo, G; Fried, J; Hodges, D; Hossain, A; Lee, W; Mahler, G; Maritato, M; Petryk, M; Roy, U; Salwen, C; Vernon, E; Yang, G; James, R B

    2015-07-01

    We developed a robust and low-cost array of virtual Frisch-grid CdZnTe detectors coupled to a front-end readout application-specific integrated circuit (ASIC) for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6 × 6 × 15 mm(3) detectors grouped into 3 × 3 sub-arrays of 2 × 2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readout electronics. The further enhancement of the arrays' performance and reduction of their cost are possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects. PMID:26233363

  4. An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras

    NASA Astrophysics Data System (ADS)

    Bolotnikov, A. E.; Ackley, K.; Camarda, G. S.; Cherches, C.; Cui, Y.; De Geronimo, G.; Fried, J.; Hodges, D.; Hossain, A.; Lee, W.; Mahler, G.; Maritato, M.; Petryk, M.; Roy, U.; Salwen, C.; Vernon, E.; Yang, G.; James, R. B.

    2015-07-01

    We developed a robust and low-cost array of virtual Frisch-grid CdZnTe detectors coupled to a front-end readout application-specific integrated circuit (ASIC) for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6 × 6 × 15 mm3 detectors grouped into 3 × 3 sub-arrays of 2 × 2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readout electronics. The further enhancement of the arrays' performance and reduction of their cost are possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.

  5. Simulation of the Expected Performance of a Seamless Scanner for Brain PET Based on Highly Pixelated CdTe Detectors

    PubMed Central

    Mikhaylova, Ekaterina; De Lorenzo, Gianluca; Chmeissani, Mokhtar; Kolstein, Machiel; Cañadas, Mario; Arce, Pedro; Calderón, Yonatan; Uzun, Dilber; Ariño, Gerard; Macias-Montero, José Gabriel; Martinez, Ricardo; Puigdengoles, Carles; Cabruja, Enric

    2014-01-01

    The aim of this work is the evaluation of the design for a nonconventional PET scanner, the voxel imaging PET (VIP), based on pixelated room-temperature CdTe detectors yielding a true 3-D impact point with a density of 450 channels cm3, for a total 6 336 000 channels in a seamless ring shaped volume. The system is simulated and evaluated following the prescriptions of the NEMA NU 2-2001 and the NEMA NU 4-2008 standards. Results show that the excellent energy resolution of the CdTe detectors (1.6% for 511 keV photons), together with the small voxel pitch (1×1×2 mm3), and the crack-free ring geometry, give the design the potential to overcome the current limitations of PET scanners and to approach the intrinsic image resolution limits set by physics. The VIP is expected to reach a competitive sensitivity and a superior signal purity with respect to values commonly quoted for state-of-the-art scintillating crystal PETs. The system can provide 14 cps/kBq with a scatter fraction of 3.95% and 21 cps/kBq with a scatter fraction of 0.73% according to NEMA NU 2-2001 and NEMA NU 4-2008, respectively. The calculated NEC curve has a peak value of 122 kcps at 5.3 kBq/mL for NEMA NU 2-2001 and 908 kcps at 1.6 MBq/mL for NEMA NU 4-2008. The proposed scanner can achieve an image resolution of ~ 1 mm full-width at half-maximum in all directions. The virtually noise-free data sample leads to direct positive impact on the quality of the reconstructed images. As a consequence, high-quality high-resolution images can be obtained with significantly lower number of events compared to conventional scanners. Overall, simulation results suggest the VIP scanner can be operated either at normal dose for fast scanning and high patient throughput, or at low dose to decrease the patient radioactivity exposure. The design evaluation presented in this work is driving the development and the optimization of a fully operative prototype to prove the feasibility of the VIP concept. PMID:24108750

  6. High-rate x-ray spectroscopy in mammography with a CdTe detector: A digital pulse processing approach

    SciTech Connect

    Abbene, L.; Gerardi, G.; Principato, F.; Del Sordo, S.; Ienzi, R.; Raso, G.

    2010-12-15

    Purpose:Direct measurement of mammographic x-ray spectra under clinical conditions is a difficult task due to the high fluence rate of the x-ray beams as well as the limits in the development of high resolution detection systems in a high counting rate environment. In this work we present a detection system, based on a CdTe detector and an innovative digital pulse processing (DPP) system, for high-rate x-ray spectroscopy in mammography. Methods: The DPP system performs a digital pile-up inspection and a digital pulse height analysis of the detector signals, digitized through a 14-bit, 100 MHz digitizer, for x-ray spectroscopy even at high photon counting rates. We investigated on the response of the digital detection system both at low (150 cps) and at high photon counting rates (up to 500 kcps) by using monoenergetic x-ray sources and a nonclinical molybdenum anode x-ray tube. Clinical molybdenum x-ray spectrum measurements were also performed by using a pinhole collimator and a custom alignment device. Results: The detection system shows excellent performance up to 512 kcps with an energy resolution of 4.08% FWHM at 22.1 keV. Despite the high photon counting rate (up to 453 kcps), the molybdenum x-ray spectra, measured under clinical conditions, are characterized by a low number of pile-up events. The agreement between the attenuation curves and the half value layer values, obtained from the measured spectra, simulated spectra, and from the exposure values directly measured with an ionization chamber, also shows the accuracy of the measurements. Conclusions: These results make the proposed detection system a very attractive tool for both laboratory research and advanced quality controls in mammography.

  7. Model-based pulse shape correction for CdTe detectors

    NASA Astrophysics Data System (ADS)

    Bargholtz, Chr.; Fumero, E.; Mårtensson, L.

    1999-02-01

    We present a systematic method to improve energy resolution of CdTe-detector systems with full control of the efficiency. Sampled pulses and multiple amplifier data are fitted by a model of the pulse shape including the deposited energy and the interaction point within the detector as parameters. We show the decisive improvements of spectral resolution and photo-peak efficiency that is obtained without distortion of spectral shape. The information concerning the interaction depth of individual events can be used to discriminate between beta particles and gamma quanta.

  8. Imaging and spectral performance of CdTe double-sided strip detectors for the hard x-ray imager onboard ASTRO-H

    NASA Astrophysics Data System (ADS)

    Hagino, Kouichi; Odaka, Hirokazu; Sato, Goro; Watanabe, Shin; Takeda, Shin'ichiro; Kokubun, Motohide; Fukuyama, Taro; Saito, Shinya; Sato, Tamotsu; Ichinohe, Yuto; Takahashi, Tadayuki; Nakano, Toshio; Nakazawa, Kazuhiro; Makishima, Kazuo; Tajima, Hiroyasu; Tanaka, Takaaki; Ishibashi, Kazunori; Miyazawa, Takuya; Sakai, Michito; Sakanobe, Karin; Kato, Hiroyoshi; Takizawa, Shunya; Uesugi, Kentaro

    2012-09-01

    The imaging and spectral performance of CdTe double-sided strip detectors (CdTe-DSDs) was evaluated for the ASTRO-H mission. The charcterized CdTe-DSDs have a strip pitch of 0.25 mm, an imaging area of 3.2 cm × 3.2 cm and a thickness of 0.75 mm. The detector was successfully operated at a temperature of -20°C and with an applied bias voltage of 250 V. By using two-strip events as well as one-strip events for the event reconstruction, a good energy resolution of 2.0 keV at 59.5 keV and a sub-strip spatial resolution was achieved. The hard X-ray and gamma-ray response of CdTe-DSDs is complex due to the properties of CdTe and the small pixel effect. Therefore, one of the issues to investigate is the response of the CdTe-DSD. In order to investigate the spatial dependence of the detector response, we performed fine beam scan experiments at SPring-8, a synchrotron radiation facility. From these experiments, the depth structure of the electric field was determined as well as properties of carriers in the detector and successfully reproduced the experimental data with simulated spectra.

  9. Hard X-ray and gamma-ray detector for ASTRO-H based on Si and CdTe imaging sensors

    NASA Astrophysics Data System (ADS)

    Hxi/Sgd Team; Kokubun, M.; Watanabe, S.; Nakazawa, K.; Tajima, H.; Fukazawa, Y.; Takahashi, T.; Kataoka, J.; Kamae, T.; Katagiri, H.; Madejski, G. M.; Makishima, K.; Mizuno, T.; Ohno, M.; Sato, R.; Takahashi, H.; Tanaka, T.; Tashiro, M.; Terada, Y.; Yamaoka, K.; HXI/SGD Team

    2010-11-01

    We have been developing a hard X-ray imager and soft gamma-ray detector as on board instruments of the ASTRO-H mission. The Hard X-ray Imager (HXI) is one of the three focal plane detectors of ASTRO-H, which is aimed to realize the focusing imaging of hard X-ray photons in combination with hard X-ray telescopes. By use of the hybrid structure composed of double-sided silicon strip detectors and a cadmium telluride strip detector, it fully covers the energy range up to 80 keV with a high quantum efficiency. High spatial resolutions of 250μm pitch and energy resolutions of 1-2 keV (FWMH) are at the same time achieved with low noise front-end ASICs. The Soft Gamma-ray Detector (SGD) is a novel and unique detector which is characterized by semiconductor Compton cameras surrounded by narrow field-of-view active shields, and covers a higher energy range (30-600 keV) than that of HXI. It consists of four Compton Cameras constructed with many layers of Silicon and CdTe pad detectors. With its multi-layer structure and Compton reconstruction capability, in addition to the BGO active shields read by Avalanche photo-diodes, this detector will achieve an extremely high background rejection efficiency in the orbit. We report the current status of hardware development including the design requirement, expected performance, and technical readinesses of key technologies.

  10. Gamma ray detector modules

    NASA Technical Reports Server (NTRS)

    Capote, M. Albert (Inventor); Lenos, Howard A. (Inventor)

    2009-01-01

    A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

  11. ILLUMINATION RESPONSE OF CDZNTE

    SciTech Connect

    Teague, L.; Washington, A.; Duff, M.

    2011-08-02

    CdZnTe (CZT) semiconducting crystals are of interest for use as room temperature X- and {gamma}-ray spectrometers. Several studies have focused on understanding the various electronic properties of these materials, such as the surface and bulk resistivities and the distribution of the electric field within the crystal. Specifically of interest is how these properties are influenced by a variety of factors including structural heterogeneities, such as secondary phases (SPs) and line defects as well as environmental effects. Herein, we report the bulk current, surface current, electric field distribution and performance of a spectrometer-grade CZT crystal exposed to above band-gap energy illumination.

  12. Dynamic X-ray direct conversion detector using a CdTe polycrystalline layer coupled to a CMOS readout chip

    NASA Astrophysics Data System (ADS)

    Arques, Marc; Renet, Sébastien; Brambilla, Andréa; Feuillet, Guy; Gasse, Adrien; Billon-Pierron, Nicolas; Jolliot, Muriel; Mathieu, Lydie; Rohr, Pierre

    2011-05-01

    A direct detection X-ray imager is presented. It uses polycrystalline cadmium telluride (CdTe) grown by close space sublimation technique for the X-ray photoconductor. A 15 mm×15 mm CdTe layer is connected to a 200×200 pixel readout CMOS by indium bumping. X-ray performance at 16 frames/s rate is measured. In particular a readout noise of 0.5 X-ray, an MTF of 50% at 4 lp/mm and a DQE of 20% at 4 lp/mm are obtained.

  13. Point Defect Characterization in CdZnTe

    SciTech Connect

    Gul,R.; Li, Z.; Bolotnikov, A.; Keeter, K.; Rodriguez, R.; James, R.

    2009-03-24

    Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I-V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.

  14. Continued Development of Small-Pixel CZT and CdTe Detectors for Future High-Angular-Resolution Hard X-ray Missions

    NASA Astrophysics Data System (ADS)

    Krawczynski, Henric

    The Nuclear Spectroscopic Telescope Array (NuSTAR) Small Explorer Mission was launched in June 2012 and has demonstrated the technical feasibility and high scientific impact of hard X-ray astronomy. We propose to continue our current R&D program to develop finely pixelated semiconductor detectors and the associated readout electronics for the focal plane of a NuSTAR follow-up mission. The detector-ASIC (Application Specific Integrated Circuit) package will be ideally matched to the new generation of low-cost, low-mass X-ray mirrors which achieve an order of magnitude better angular resolution than the NuSTAR mirrors. As part of this program, the Washington University group will optimize the contacts of 2x2 cm^2 footprint Cadmium Zinc Telluride (CZT) and Cadmium Telluride (CdTe) detectors contacted with 100x116 hexagonal pixels at a next-neighbor pitch of 200 microns. The Brookhaven National Laboratory group will design, fabricate, and test the next generation of the HEXID ASIC matched to the new X-ray mirrors and the detectors, providing a low-power 100x116 channel ASIC with extremely low readout noise (i.e. with a root mean square noise of 13 electrons). The detectors will be tested with radioactive sources and in the focal plane of high-angular-resolution X-ray mirrors at the X-ray beam facilities at the Goddard and Marshall Space Flight Centers.

  15. CdZnTe Background Measurements at Balloon Altitudes with PoRTIA

    NASA Technical Reports Server (NTRS)

    Parsons, A.; Barthelmy, S.; Bartlett, L.; Gehrels, N.; Naya, J.; Stahle, C. M.; Tueller, J.; Teegarden, B.

    2003-01-01

    Measurements of the CdZnTe internal background at balloon altitudes are essential to determine which physical processes make the most important background contributions. We present results from CdZnTe background measurements made by PoRTIA, a small CdZnTe balloon instrument that was flown three times in three different shielding configurations. PoRTIA was passively shielded during its first flight from Palestine, Texas and actively shielded as a piggyback instrument on the GRIS balloon experiment during its second and third flights from Alice Springs, Australia, using the thick GRIS Nal anticoincidence shield. A significant CdZnTe background reduction was achieved during the third flight with PoRTIA placed completely inside the GRIS shield and blocking crystal, and thus completely surrounded by 15 cm of Nal. A unique balloon altitude background data set is provided by CdZnTe and Ge detectors simultaneously surrounded by the same thick anticoincidence shield; the presence of a single coxial Ge detector inside the shield next to PoRTIA allowed a measurement of the ambient neutron flux inside the shield throughout the flight. These neutrons interact with the detector material to produce isomeric states of the Cd, Zn and Te nuclei that radiatively decay; calculations are presented that indicate that these decays may explain most of the fully shielded CdZnTe background.

  16. Determination of 235U enrichment with a large volume CZT detector

    NASA Astrophysics Data System (ADS)

    Mortreau, Patricia; Berndt, Reinhard

    2006-01-01

    Room-temperature CdZnTe and CdTe detectors have been routinely used in the field of Nuclear Safeguards for many years [Ivanov et al., Development of large volume hemispheric CdZnTe detectors for use in safeguards applications, ESARDA European Safeguards Research and Development Association, Le Corum, Montpellier, France, 1997, p. 447; Czock and Arlt, Nucl. Instr. and Meth. A 458 (2001) 175; Arlt et al., Nucl. Instr. and Meth. A 428 (1999) 127; Lebrun et al., Nucl. Instr. and Meth. A 448 (2000) 598; Aparo et al., Development and implementation of compact gamma spectrometers for spent fuel measurements, in: Proceedings, 21st Annual ESARDA, 1999; Arlt and Rudsquist, Nucl. Instr. and Meth. A 380 (1996) 455; Khusainov et al., High resolution pin type CdTe detectors for the verification of nuclear material, in: Proceedings, 17th Annual ESARDA European Safeguards Research and Development Association, 1995; Mortreau and Berndt, Nucl. Instr. and Meth. A 458 (2001) 183; Ruhter et al., UCRL-JC-130548, 1998; Abbas et al., Nucl. Instr. and Meth. A 405 (1998) 153; Ruhter and Gunnink, Nucl. Instr. and Meth. A 353 (1994) 716]. Due to their performance and small size, they are ideal detectors for hand-held applications such as verification of spent and fresh fuel, U/Pu attribute tests as well as for the determination of 235U enrichment. The hemispherical CdZnTe type produced by RITEC (Riga, Latvia) [Ivanov et al., 1997] is the most widely used detector in the field of inspection. With volumes ranging from 2 to 1500 mm 3, their spectral performance is such that the use of electronic processing to correct the pulse shape is not required. This paper reports on the work carried out with a large volume (15×15×7.5 mm 3) and high efficiency hemispherical CdZnTe detector for the determination of 235U enrichment. The measurements were made with certified uranium samples whose enrichment ranging from 0.31% to 92.42%, cover the whole range of in-field measurement conditions. The interposed

  17. Hard X-ray polarimetry with Caliste, a high performance CdTe based imaging spectrometer

    NASA Astrophysics Data System (ADS)

    Antier, S.; Ferrando, P.; Limousin, O.; Caroli, E.; Curado da Silva, R. M.; Blondel, C.; Chipaux, R.; Honkimaki, V.; Horeau, B.; Laurent, P.; Maia, J. M.; Meuris, A.; Del Sordo, S.; Stephen, J. B.

    2015-06-01

    Since the initial exploration of the X- and soft γ-ray sky in the 60's, high-energy celestial sources have been mainly characterized through imaging, spectroscopy and timing analysis. Despite tremendous progress in the field, the radiation mechanisms at work in sources such as neutrons stars, black holes, and Active Galactic Nuclei are still unclear. The polarization state of the radiation is an observational parameter which brings key additional information about the physical processes in these high energy sources, allowing the discrimination between competing models which may otherwise all be consistent with other types of measurement. This is why most of the projects for the next generation of space missions covering the few tens of keV to the MeV region require a polarization measurement capability. A key element enabling this capability, in this energy range, is a detector system allowing the identification and characterization of Compton interactions as they are the main process at play. The compact hard X-ray imaging spectrometer module, developed in CEA with the generic name of "Caliste" module, is such a detector. In this paper, we present experimental results for two types of Caliste-256 modules, one based on a CdTe crystal, the other one on a CdZnTe crystal, which have been exposed to linearly polarized beams at the European Synchrotron Radiation Facility (ESRF). These results, obtained at 200 and 300 keV, demonstrate the capability of these modules to detect Compton events and to give an accurate determination of the polarization parameters (polarization angle and fraction) of the incoming beam. For example, applying an optimized selection to our data set, equivalent to select 90° Compton scattered interactions in the detector plane, we find a modulation factor Q of 0.78 ± 0.06 in the 200-300 keV range. The polarization angle and fraction are derived with accuracies of approximately 1° and 5 % respectively for both CdZnTe and CdTe crystals. The

  18. CdZnTe solid-state gamma cameras

    SciTech Connect

    Butler, J.F.; Lingren, C.L.; Friesenhahn, S.J.

    1998-06-01

    The authors report the development of a CdZnTe gamma ray imager whose advantages over the conventional Anger camera include (1) improved contrast resulting from superior energy resolution and unambiguous position determination and (2) the small size and weight and high reliability inherent in an all-solid-state construction. It provides high energy resolution and peak efficiency by incorporating Digirad`s new SpectrumPlus{trademark} detector technology. The new imager employs a modular design, in which each 1 inch x 1 inch module incorporates a monolithic 64-element CdZnTe detector array and ASIC-based circuitry that provides signal conditioning for every channel, identification of valid events and addressing functions. Imagers with a wide range of sizes and shapes can be assembled by tiling modules together on a specially designed signal routing board.

  19. SYNCHROTRON X-RAY BASED CHARACTERIZATION OF CDZNTE CRYSTALS

    SciTech Connect

    Duff, M

    2006-09-28

    Synthetic CdZnTe or 'CZT' crystals can be used for the room temperature-based detection of {gamma}-radiation. Structural/morphological heterogeneities within CZT, such as twinning, inclusions, and polycrystallinity can affect detector performance. We used a synchrotron-based X-ray technique, specifically extended X-ray absorption fine-structure (EXAFS) spectroscopy, to determine whether there are differences on a local structural level between intact CZT of high and low radiation detector performance. These studies were complemented by data on radiation detector performance and transmission IR imaging. The EXAFS studies revealed no detectable local structural differences between the two types of CZT materials.

  20. Semiconductor P-I-N detector

    SciTech Connect

    Sudharsanan, Rengarajan; Karam, Nasser H.

    2001-01-01

    A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

  1. CdZnTe gamma ray spectrometer for orbital gamma ray spectroscopy.

    SciTech Connect

    Prettyman, T. H.; Feldman, W. C.; Fuller, K. R.; Storms, S. A.; Soldner, S. A.; Lawrence, David J. ,; Browne, M. C.; Moss, C. E.

    2001-01-01

    We present the design and analysis of a new gamma ray spectrometer for planetary science that uses an array of CdZnTe detectors to achieve the detection efficiency needed for orbital measurements. The use of CdZnTe will provide significantly improved pulse height resolution relative to scintillation-based detectors, with commensurate improvement in the accuracy of elemental abundances determined by gamma ray and neutron spectroscopy. The spectrometer can be flown either on the instrument deck of the spacecraft or on a boom. For deck-mounted systems, a BGO anticoincidence shield is included in the design to suppress the response of the CdZnTe detector to gamma rays that originate in the spacecraft. The BGO shield also serves as a backup spectrometer, providing heritage from earlier planetary science missions and reducing the risk associated with the implementation of new technology.

  2. Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy.

    PubMed

    Gu, Yaxu; Jie, Wanqi; Li, Linglong; Xu, Yadong; Yang, Yaodong; Ren, Jie; Zha, Gangqiang; Wang, Tao; Xu, Lingyan; He, Yihui; Xi, Shouzhi

    2016-09-01

    To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe radiation detectors, the perturbation of the electrical field in and around Te inclusions was studied in CdZnTe single crystals via Kelvin probe force microscopy (KPFM). Te inclusions were proved to act as lower potential centers with respect to surrounding CdZnTe matrix. Based on the KPFM results, the energy band diagram at the Te/CdZnTe interface was established, and the bias-dependent effects of Te inclusion on carrier transportation is discussed. PMID:27376976

  3. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

    PubMed

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-08-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μW from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e(-) RMS at room temperature. PMID:24187382

  4. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners

    PubMed Central

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-01-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event’s time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μW from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e− RMS at room temperature. PMID:24187382

  5. Background information and technological tests of hard X-ray detectors .

    NASA Astrophysics Data System (ADS)

    Natalucci, L.; Caroli, E.; Quadrini, E.; Del Sordo, S.; Ubertini, P.

    Hard X-ray detectors for astronomical observations are currently being designed with advanced background rejection capabilities, based on high level of pixelisation and on fast signal processing. The development of such devices, based on room temperature semiconductor such as CdTe or CdZnTe comes through extensive testing programs normally based on ground campaigns, using radioactive sources, X-ray tubes and particle beam accelerators. These methods show their limits, however, especially for the measurements of the response to the different types of hadrons. Firtsly, we briefly review the knowledge of the primary sources of background and of the different radiation environments both for space and balloon altitudes, for which typical fluxes/rates are given. Then, we discuss how flying prototypes on high altitude balloons can greatly help to test the detector performance in an environment almost as severe as the conditions found in orbit, with detectors responding at very similar rates.

  6. Investigation of CdZnTe for Thin-Film Tandem Solar Cell Applications: Preprint

    SciTech Connect

    Dhere, R.; Gessert, T.; Zhou, J.; Asher, S.; Pankow, J.; Moutinho, H.

    2003-04-01

    Modeling of two-junction tandem devices shows that for optimal device performance, the bandgap of the top cell should be around 1.6-1.8 eV. CdZnTe alloys can be tailored to yield bandgaps in the desired range. In this study, we considered were used to fabricate these films, using close-spaced sublimation (CSS) and radio-frequency sputtering (RFS) techniques. In the first approach, we used mixed powders of CdTe and ZnTe as the source for film deposition by CSS. Even for the ZnTe/CdTe (95:5 ratio) source material, the deposited films were entirely CdTe due to higher vapor pressure of CdTe. In the second approach, we used pre-alloyed CdZnTe powders (CERAC, Inc.) as the source. Due to the lower sticking coefficient of Zn, even for the source composition of 75% Zn, these films contained very low quantities of Zn (~5%). We tried unsuccessfully to increase the Zn content in the films by confining Zn vapor by enclosing the region between the source and substrate, reducing the substrate temperature to 400C, and adjusting the source/substance distance. Finally, we used thin-film couples consisting of 300-nm-thick CdTe deposited by CSS and 300-nm-thick ZnTe deposited by RFS; the samples were then heat-treated in cadmium chloride vapor. Compositional analysis of the samples showed extensive interdiffusion of Cd and Zn for the annealed samples. We will present the data on the various stack configurations of CdTe and ZnTe, the effect of different post-deposition anneals, the effect of oxygen on the interdiffusion and alloy formation and its possible correlation to the device performance degradation.

  7. MediSPECT: Single photon emission computed tomography system for small field of view small animal imaging based on a CdTe hybrid pixel detector

    NASA Astrophysics Data System (ADS)

    Accorsi, R.; Autiero, M.; Celentano, L.; Chmeissani, M.; Cozzolino, R.; Curion, A. S.; Frallicciardi, P.; Laccetti, P.; Lanza, R. C.; Lauria, A.; Maiorino, M.; Marotta, M.; Mettivier, G.; Montesi, M. C.; Riccio, P.; Roberti, G.; Russo, P.

    2007-02-01

    We describe MediSPECT, a new scanner developed at University and INFN Napoli, for SPECT studies on small animals with a small field of view (FOV) and high spatial resolution. The CdTe pixel detector (a 256×256 matrix of 55 μm square pixels) operating in single photon counting for detection of gamma-rays with low and medium energy (e.g. 125I, 27-35 keV, 99mTc, 140 keV), is bump bonded to the Medipix2 readout chip. The FOV of the MediSPECT scanner with a coded aperture mask collimator ranges from 6.3 mm (system spatial resolution 110 μm at 27-35 keV) to 24.3 mm. With a 0.30 mm pinhole the FOV ranges from 2.4 to 29 mm (where the system spatial resolution is 1.0 mm at 27-35 keV and 2.0 mm at 140 keV). MediSPECT will be used for in vivo imaging of small organs or tissue structures in mouse, e.g., brain, thyroid, heart or tumor.

  8. Development of CdZnTe immersion grating for spaceborne application

    NASA Astrophysics Data System (ADS)

    Sarugaku, Yuki; Ikeda, Yuji; Kobayashi, Naoto; Sukegawa, Takashi; Sugiyama, Shigeru; Enya, Keigo; Kataza, Hirokazu; Matsuhara, Hideo; Nakagawa, Takao; Kawakita, Hideyo; Kondo, Sohei; Hirahara, Yasuhiro; Yasui, Chikako

    2012-09-01

    We have been developing an immersion grating for high-resolution spectroscopy in the mid-infrared (MIR) wavelength region. A MIR (12-18 µm) high-resolution (R = 20,000-30,000) spectrograph with the immersion grating is proposed for SPICA, Japanese next-generation space telescope. The instrument will be the world's first high-resolution spectrograph in space, and it would make great impacts on infrared astronomy. To realize a high-efficiency immersion grating, optical properties and machinability of bulk materials are the critical issues. There are three candidate materials with good MIR transmittance; CdTe (n = 2.65), CdZnTe (n = 2.65), and KRS5 (n = 2.30). From measurements of transmittance with FTIR and of homogeneity with phase-shifting interferometry at 1.55 μm, we confirmed that CdZnTe is the best material that satisfies all the optical requirements. As for machinability, by applying Canon's diamond cutting (planing) technique, fine grooves that meet our requirement were successfully cut on flats for all the materials. We also managed to fabricate a small CdZnTe immersion grating, which shows a high grating efficiency from the air. For the reflective metal coating, we tried Au (with thin underlying layer of Cr) and Al on CdZnTe flats both by sputter deposition and vapor deposition. All samples are found to be robust under 77 K and some of them achieve required reflectivity. Despite several remaining technical issues, the fabrication of CdZnTe immersion grating appears to be sound.

  9. A Monte Carlo simulation study of an improved K-edge log-subtraction X-ray imaging using a photon counting CdTe detector

    NASA Astrophysics Data System (ADS)

    Lee, Youngjin; Lee, Amy Candy; Kim, Hee-Joung

    2016-09-01

    Recently, significant effort has been spent on the development of photons counting detector (PCD) based on a CdTe for applications in X-ray imaging system. The motivation of developing PCDs is higher image quality. Especially, the K-edge subtraction (KES) imaging technique using a PCD is able to improve image quality and useful for increasing the contrast resolution of a target material by utilizing contrast agent. Based on above-mentioned technique, we presented an idea for an improved K-edge log-subtraction (KELS) imaging technique. The KELS imaging technique based on the PCDs can be realized by using different subtraction energy width of the energy window. In this study, the effects of the KELS imaging technique and subtraction energy width of the energy window was investigated with respect to the contrast, standard deviation, and CNR with a Monte Carlo simulation. We simulated the PCD X-ray imaging system based on a CdTe and polymethylmethacrylate (PMMA) phantom which consists of the various iodine contrast agents. To acquired KELS images, images of the phantom using above and below the iodine contrast agent K-edge absorption energy (33.2 keV) have been acquired at different energy range. According to the results, the contrast and standard deviation were decreased, when subtraction energy width of the energy window is increased. Also, the CNR using a KELS imaging technique is higher than that of the images acquired by using whole energy range. Especially, the maximum differences of CNR between whole energy range and KELS images using a 1, 2, and 3 mm diameter iodine contrast agent were acquired 11.33, 8.73, and 8.29 times, respectively. Additionally, the optimum subtraction energy width of the energy window can be acquired at 5, 4, and 3 keV for the 1, 2, and 3 mm diameter iodine contrast agent, respectively. In conclusion, we successfully established an improved KELS imaging technique and optimized subtraction energy width of the energy window, and based on

  10. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    SciTech Connect

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  11. Purification of CdZnTe by Electromigration

    SciTech Connect

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of the electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

  12. Purification of CdZnTe by electromigration

    SciTech Connect

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 μm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91 × 10{sup −2} cm{sup 2}/V, compared with that of 1.4 × 10{sup −3} cm{sup 2}/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

  13. Purification of CdZnTe by Electromigration

    DOE PAGESBeta

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of themore » electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.« less

  14. Study of ICP-RIE etching on CdZnTe substrate

    NASA Astrophysics Data System (ADS)

    Xu, Pengxiao; Qiao, Hui; Wang, Ren; Lan, Tianyi; Liu, Shijia; Wang, Nili; Zhou, Qin; Xu, Bin; Liu, Xiujuan; Lu, Yidan; Wang, Li-wei; Chang, Chao; Zhang, Kefeng; Li, Xiangyang

    2014-11-01

    CdZnTe is the most suitable epitaxial substrate material of HgCdTe infrared detectors, because its lattice constant is able to achieve full match with HgCdTe's lattice constant. It is always needed to etch CdZnTe substrate during the process of device separation or when we want to fabricate micro optical device on CdZnTe substrate. This paper adopts the more advanced method, Inductive Coupled Plasma-Reactive Ion Etching(ICP-RIE). The etching conditions of ICP-RIE on CdZnTe substrate are explored and researched. First of all, a set of comparative experiments is designed. All of CdZnTe samples with the same component are polished by chemical mechanical polishing before etching. Then all samples are etched by different types of etching gases(CH4/H2/N2/Ar) and different ratios of gases as we designed. The etching time is all set to 30 minutes. After that, the surface roughness, etching rate, etching damage and the profile of etched mesas are tested and characterized by optical microscope, step profiler and confocal laser scanning microscope (CLSM), respectively. It is found that, Ar gas plays the role of physical etching, but the etching rate will decline when the concentration of Ar gas is too high. The results also show that, the introduction of N2 causes more etching damage. Finally, combination of CH4/H2/Ar is used to etch CdZnTe substrate. The ratio of these gases is 2sccm/2sccm/10sccm. The testing results of optimized etching show that, the maximum etching rate reaches up to 20μm/h and the etched CdZnTe surface is smooth with very low etching damage. At last, aimed at the shortcoming of photoresist's degeneration after long-time etching, the ICP etching process of CdZnTe deep mesa is studied. Double-layer or triple-layer photoresist are spin-coated on CdZnTe substrate during the process of lithography. Then ICP etching is carried out with the optimized condition. It is seen that there is no more phenomena of degeneration.

  15. Development of a (Hg, Cd)Te photodiode detector, Phase 2. [for 10.6 micron spectral region

    NASA Technical Reports Server (NTRS)

    1972-01-01

    High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.

  16. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    SciTech Connect

    Carmody, M.; Gilmore, A.

    2011-05-01

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  17. Cadmium Manganese Telluride (Cd1-xMnxTe): A potential material for room-temperature radiation detectors

    SciTech Connect

    Hossain, A.; Cui, Y.; Bolotnikov, A.; Camarda, G.; Yang, G.; Kim, K-H.; Gul, R.; Xu, L.; Li, L.; Mycielski, A.; and James, R.B.

    2010-07-11

    Cadmium Manganese Telluride (CdMnTe) recently emerged as a promising material for room-temperature X- and gamma-ray detectors. It offers several potential advantages over CdZnTe. Among them is its optimal tunable band gap ranging from 1.7-2.2 eV, and its relatively low (< 50%) content of Mn compared to that of Zn in CdZnTe that assures this favorable band-gap range. Another important asset is the segregation coefficient of Mn in CdTe that is approximately unity compared to 1.35 for Zn in CdZnTe, so ensuring the homogenous distribution of Mn throughout the ingot; hence, a large-volume stoichiometric yield is attained. However, some materials issues primarily related to the growth process impede the production of large, defect-free single crystals. The high bond-ionicity of CdMnTe entails a higher propensity to crystallize into a hexagonal structure rather than to adopt the expected zinc-blend structure, which is likely to generate twins in the crystals. In addition, bulk defects generate in the as-grown crystals due to the dearth of high-purity Mn, which yields a low-resistivity material. In this presentation, we report on our observations of such material defects in current CdMnTe materials, and our evaluation of its potential as an alternative detector material to the well-known CdZnTe detectors. We characterized the bulk defects of several indium- and vanadium-doped Cd1-xMnxTe crystals by using several advanced techniques, viz., micro-scale mapping, white-beam x-ray diffraction/reflection topography, and chemical etching. Thereafter, we fabricated some detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Our experimental results indicate that CdMnTe materials could well prove to become a viable alternative in the near future.

  18. Point Defects in CdZnTe Crystals Grown by Different Techniques

    SciTech Connect

    Gul, R.; Bolotnikov, A.; Kim, H.K.; Rodriguez, R.; Keeter, K.; Li, Z.; Gu, G.; and James, R.B.

    2011-02-02

    We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques. We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Although the levels of most of the identified defects were independent of the crystal growth techniques, nevertheless there were some associated differences in the traps energies and densities.

  19. Point Defects in CdZnTe Crystals Grown by Different Techniques

    SciTech Connect

    R Gul; A Bolotnikov; H Kim; R Rodriguez; K Keeter; Z Li; G Gu; R James

    2011-12-31

    We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques. We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Although the levels of most of the identified defects were independent of the crystal growth techniques, nevertheless there were some associated differences in the traps energies and densities.

  20. Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

    NASA Astrophysics Data System (ADS)

    Reddy, M.; Peterson, J. M.; Vang, T.; Franklin, J. A.; Vilela, M. F.; Olsson, K.; Patten, E. A.; Radford, W. A.; Bangs, J. W.; Melkonian, L.; Smith, E. P. G.; Lofgreen, D. D.; Johnson, S. M.

    2011-08-01

    This paper presents the status of HgCdTe growth on large-area Si and CdZnTe substrates at Raytheon Vision Systems (RVS). The different technological tools that were used to scale up the growth from 4 inch to 6 inch diameter on Si and from 4 cm × 4 cm to 8 cm × 8 cm on CdZnTe without sacrificing the quality of the layers are described. Extremely high compositional uniformity and low macrodefect density were achieved for single- and two-color HgCdTe layers on both Si and CdZnTe substrates. Finally, a few examples of detector and focal-plane array results are included to highlight the importance of high compositional uniformity and uniformly low macrodefect density of the epitaxial layers in obtaining high operability and low cluster outages in single- and two-color focal-plane arrays (FPAs).

  1. Electron trapping non-uniformity in high-pressure-Bridgman-grown CdZnTe

    SciTech Connect

    Amman, Mark; Lee, Julie S.; Luke, Paul N.

    2002-05-09

    Gamma-ray spectroscopy is a valuable tool of science and technology. Many applications for this tool are in need of a detector technology capable of achieving excellent energy resolution and efficient detection while operating at room temperature. Detectors based on the material cadmium zinc telluride (CdZnTe) could potentially meet this need if certain material deficiencies are addressed. The coplanar-grid as well as other electron-only detection techniques are effective in overcoming some of the material problems of CdZnTe and, consequently, have led to efficient gamma-ray detectors with good energy resolution while operating at room temperature. At the present time, the performance of these detectors is mainly limited by the degree of uniformity in electron generation and transport. Despite recent progress in the growth of CdZnTe material, small variations in these properties remain a barrier to the widespread success of such detectors. Alpha-particle response characterization of Cd ZnTe crystals fabricated into simple planar detectors provides an effective tool to accurately study such variations. We have used a finely collimated alpha source to produce two-dimensional maps of detector response. For a number of crystals, a clear correlation has been observed between their alpha response maps and the distribution of tellurium inclusions inside the crystals. An analysis of the induced charge signals indicates that regions of enhanced electron trapping are associated with the inclusions, and that these regions extend beyond the physical size of the inclusions. Such regions introduce non-uniform electron trapping in the material that then degrades the spectroscopic performance of the material as a gamma-ray detector.

  2. Multichannel CdZnTe gamma ray spectrometer

    NASA Astrophysics Data System (ADS)

    Doty, F. P.; Lingren, C. L.; Apotovsky, B. A.; Brunsch, J.; Butler, J. F.; Collins, T.; Conwell, R. L.; Friesenhahn, S.; Gormley, J.; Pi, B.; Zhao, S.; Augustine, F. L.; Bennett, B. A.; Cross, E.; James, R. B.

    1999-02-01

    A 3 cm 3 multichannel gamma spectrometer for DOE applications is under development by Digirad Corporation. The device is based on a position sensitive detector packaged in a compact multi-chip module (MCM) with integrated readout circuitry. The modular, multichannel design will enable identification and quantitative analysis of radionuclides in extended sources, or sources containing low levels of activity. The MCM approach has the advantages that the modules are designed for imaging applications, and the sensitivity can be arbitrarily increased by increasing the number of pixels, i.e. adding modules to the instrument. For a high sensitivity probe, the outputs for each pixel can be corrected for gain and offset variations, and summed digitally. Single pixel results obtained with discrete low noise readout indicate energy resolution of 3 keV can be approached with currently available CdZnTe. The energy resolution demonstrated to date with MCMs for 511 keV gamma rays is 10 keV.

  3. A CdZnTe array for the detection of explosives in baggage by energy-dispersive X-ray diffraction signatures at multiple scatter angles

    NASA Astrophysics Data System (ADS)

    Malden, Catharine H.; Speller, Robert. D.

    2000-07-01

    CdZnTe detectors were used to collect energy-dispersive diffraction spectra at a range of scatter angles, from sheets of explosives hidden in baggage. It is shown that the combined information from these `signatures' can be used to determine whether an explosive sample is present or not. The geometrical configuration of the collimation and the position of the baggage within the scanner must be taken into careful consideration when optimising the capabilities of such a system. The CdZnTe array lends itself well to the detection of explosives in baggage since multiple signals may be collected simultaneously providing more rapid detection than achieved using a single detector.

  4. Low Temperature Photoluminescence Characterization of Orbitally Grown CdZnTe

    NASA Technical Reports Server (NTRS)

    Ritter, Timothy M.; Larson, D. J.

    1998-01-01

    The II-VI ternary alloy CdZnTe is a technologically important material because of its use as a lattice matched substrate for HgCdTe based devices. The increasingly stringent requirements on performance that must be met by such large area infrared detectors also necessitates a higher quality substrate. Such substrate material is typically grown using the Bridgman technique. Due to the nature of bulk semiconductor growth, gravitationally dependent phenomena can adversely affect crystalline quality. The most direct way to alleviate this problem is by crystal growth in a reduced gravity environment. Since it requires hours, even days, to grow a high quality crystal, an orbiting space shuttle or space station provides a superb platform on which to conduct such research. For well over ten years NASA has been studying the effects of microgravity semiconductor crystal growth. This paper reports the results of photoluminescence characterization performed on an arbitrary grown CdZnTe bulk crystal.

  5. Resistive switching properties in CdZnTe films

    SciTech Connect

    Zha, Gangqiang; Lin, Yun; Tan, Tingting; Jie, Wanqi; Zeng, Dongmei

    2015-02-09

    The ternary II–VI compound semiconductor cadmium zinc telluride (CdZnTe) has bi-stable conduction characteristics. In this letter, CdZnTe films are grown on indium tin oxide (ITO) substrates by radio frequency magnetron sputtering. The current-voltage characteristics show that there is resistive switching in a structure consisting of an 800-nm-thick CdZnTe film, an Au Schottky contact, and an ITO bottom electrode. The electroresistance in Au/CdZnTe/ITO may be related to the polarization of the CdZnTe film and the Schottky contact.

  6. CHARACTERIZATION OF SECONDARY PHASES AND OTHER DEFECTS IN CDZNTE

    SciTech Connect

    Duff, M.

    2010-06-30

    Semiconducting CdZnTe or 'CZT' crystals are very suitable for use as a room temperature-based gamma radiation spectrometer. During the last decade, modifications in growth methods for CZT have significantly improved the quality of the produced crystals however there are material features that can influence the performance of these materials as radiation detectors. For example, various structural heterogeneities within the CZT crystals, such as, pipes, voids, polycrystallinity, and secondary phases (SP) can have a negative impact on the detector performance. In this study, a CZT material was grown by the modified vertical Bridgman growth (MVB) method with zone leveled growth in the absence of excess Te in the melt. Numerous SP were imaged using transmission IR at a volume % of 0.002. Samples from this material were analyzed using various analytical techniques to evaluate its electrical properties, purity and detector performance as radiation spectrometers and to determine the morphology, dimension and elemental /structural composition of one of the SP in this material. This material was found to have a high resistivity and good radiation spectrometer performance. It had SPs that were rich in calcium (Ca), carbon (C) and oxygen (O) (possibly CaCO{sub 3}) or only C and O that were 5 {micro}m or less in diameter.

  7. Analysis of rocking curve width and bound exciton linewidth of MOCVD grown CdTe layers in relation with substrate type and crystalline orientation

    NASA Astrophysics Data System (ADS)

    Tromson-Carli, A.; Svob, L.; Marfaing, Y.; Druilhe, R.; Desjonqueres, F.; Triboulet, R.

    1991-12-01

    X-ray double diffraction and photoluminescence experiments were performed on a series of CdTe layers grown by MOVPE on CdTe, CdZnTe and GaAs substrates. Some correlation appears between the measured rocking curve widths and impurity-bound exciton linewidth. To analyze these results, a model relating the exciton linewidth to the average strain induced by an array of random dislocations has been developed. It appears that X-ray diffraction is also sensitive to non-random dislocation configurations which do not affect luminescence linewidth.

  8. Point defects in Cd(Zn)Te and TlBr: Theory

    NASA Astrophysics Data System (ADS)

    Lordi, Vincenzo

    2013-09-01

    The effects of various crystal defects on the performances of CdTe, CdZnxTe (CZT), and TlBr for room-temperature high-energy radiation detection are examined using first-principles theoretical methods. The predictive, parameter-free, atomistic approaches used provide fundamental understanding of defect properties that are difficult to measure and also allow rapid screening of possibilities for material engineering, such as optimal doping and annealing conditions. Several recent examples from the author's work are reviewed, including: (i) accurate calculations of the thermodynamic and electronic properties of native point defects and point defect complexes in CdTe and CZT; (ii) the effects of Zn alloying on the native point defect properties in CZT; (iii) point defect diffusion and binding leading to Te clustering in Cd(Zn)Te; (iv) the profound effect of native point defects—principally vacancies—on the intrinsic material properties of TlBr, particularly its electronic and ionic conductivity; and (v) a study on doping TlBr to independently control the electronic and ionic conductivity.

  9. Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices

    SciTech Connect

    Hossain , A.; Xu, L.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Yang, G.; Kim, K.-H.; and James, R.B.

    2010-05-24

    We quantified the size and concentration of Te-inclusions along the lateral- and the growth-directions of a {approx}6 mm thick wafer cut axially along the center of a CdZnTe ingot. We fabricated devices, selecting samples from the center slice outward in both directions, and then tested their response to incident x-rays. We employed, in concert, an automated IR transmission microscopic system and a highly collimated synchrotron X-ray source that allowed us to acquire and correlate comprehensive information on Te inclusions and other defects to assess the material factors limiting the performance of CdZnTe detectors.

  10. Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Lehoczky, S. L.; Li, C.; Knuteson, D.; Raghothamachar, B.; Dudley, M.; Szoke, J.; Barczy, P.

    2004-01-01

    In the case of unsealed melt growth of an array of II-VI compounds, namely, CdTe, CdZnTe and ZnSe, there is a tremendous amount of experimental data describing the correlations between melt conditions and crystal quality. The results imply that the crystallinity quality can be improved if the melt was markedly superheated or long-time held before growth. It is speculated that after high superheating the associated complex dissociate and the spontaneous nucleation is retarded. In this study, crystals of CdTe were grown from melts which have undergone different thermal history by the unseeded gradient freeze method using the Universal Multizone Crystallizator (UMC). The effects of melt conditions on the quality of grown crystal were studied by various characterization techniques, including Synchrotron White Beam X-ray Topography (SWSXT), infrared microscopy, chemical analysis by glow discharge mass spectroscopy (GDMS), electrical conductivity and Hall measurements.

  11. Imaging X-ray detector front-end with high dynamic range: IDeF-X HD

    NASA Astrophysics Data System (ADS)

    Gevin, O.; Lemaire, O.; Lugiez, F.; Michalowska, A.; Baron, P.; Limousin, O.; Delagnes, E.

    2012-12-01

    Presented circuit, IDeF-X HD (Imaging Detector Front-end) is a member of the IDeF-X ASICs family for space applications. It has been optimized for a half millimeter pitch CdTe or CdZnTe pixelated detector arranged in 16×16 array. It is aimed to operate in the hard X-ray range from few keV up to 250 keV or more. The ASIC has been realized in AMS 0.35 μm CMOS process. The IDeF-X HD is a 32 channel analog front-end with self-triggering capability. The architecture of the analog channel includes a chain of charge sensitive amplifier with continuous reset system and non-stationary noise suppressor, adjustable gain stage, pole-zero cancellation stage, adjustable shaping time low pass filter, baseline holder and peak detector with discriminator. The power consumption of the IDeF-X HD is 800 μW per channel. With the in-channel variable gain stage the nominal 250 keV dynamic range of the ASIC can be extended up to 1 MeV anticipating future applications using thick sensors. Measuring the noise performance without a detector at the input with minimized leakage current (programmable) at the input, we achieved ENC of 33 electrons rms at 10.7 μs peak time. Measurements with CdTe detector show good energy resolution FWHM of 1.1 keV at 60 keV and 4.3 keV at 662 keV with detection threshold below 4 keV. In addition, an absolute temperature sensor has been integrated with resolution of 1.5 °C.

  12. Study of asymmetries of Cd(Zn)Te devices investigated using photo-induced current transient spectroscopy, Rutherford backscattering, surface photo-voltage spectroscopy, and gamma ray spectroscopies

    SciTech Connect

    Crocco, J.; Bensalah, H.; Zheng, Q.; Dieguez, E.; Corregidor, V.; Avles, E.; Castaldini, A.; Fraboni, B.; Cavalcoli, D.; Cavallini, A.; Vela, O.

    2012-10-01

    Despite these recent advancements in preparing the surface of Cd(Zn)Te devices for detector applications, large asymmetries in the electronic properties of planar Cd(Zn)Te detectors are common. Furthermore, for the development of patterned electrode geometries, selection of each electrode surface is crucial for minimizing dark current in the device. This investigation presented here has been carried out with three objectives. Each objective is oriented towards establishing reliable methods for the selection of the anode and cathode surfaces independent of the crystallographic orientation. The objectives of this study are (i) investigate how the asymmetry in I-V characteristics of Cd(Zn)Te devices may be associated with the TeO2 interfacial layer using Rutherford backscattering to study the structure at the Au-Cd(Zn)Te interface, (ii) develop an understanding of how the concentration of the active traps in Cd(Zn)Te varies with the external bias, and (iii) propose non-destructive methods for selection of the anode and cathode which are independent of crystallographic orientation. The spectroscopic methods employed in this investigation include Rutherford backscattering spectroscopy, photo-induced current transient spectroscopy, and surface photo-voltage spectroscopy, as well as gamma ray spectroscopy to demonstrate the influence on detector properties.

  13. Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates

    NASA Astrophysics Data System (ADS)

    Carmody, M.; Yulius, A.; Edwall, D.; Lee, D.; Piquette, E.; Jacobs, R.; Benson, D.; Stoltz, A.; Markunas, J.; Almeida, A.; Arias, J.

    2012-10-01

    Alternate substrates for molecular beam epitaxy growth of HgCdTe including Si, Ge, and GaAs have been under development for more than a decade. MBE growth of HgCdTe on GaAs substrates was pioneered by Teledyne Imaging Sensors (TIS) in the 1980s. However, recent improvements in the layer crystal quality including improvements in both the CdTe buffer layer and the HgCdTe layer growth have resulted in GaAs emerging as a strong candidate for replacement of bulk CdZnTe substrates for certain infrared imaging applications. In this paper the current state of the art in CdTe and HgCdTe MBE growth on (211)B GaAs and (211) Si at TIS is reviewed. Recent improvements in the CdTe buffer layer quality (double crystal rocking curve full-width at half-maximum ≈ 30 arcsec) with HgCdTe dislocation densities of ≤106 cm-2 are discussed and comparisons are made with historical HgCdTe on bulk CdZnTe and alternate substrate data at TIS. Material properties including the HgCdTe majority carrier mobility and dislocation density are presented as a function of the CdTe buffer layer quality.

  14. AFM CHARACTERIZATION OF LASER INDUCED DAMAGE ON CDZNTE CRYSTAL SURFACES

    SciTech Connect

    Hawkins, S; Lucile Teague, L; Martine Duff, M; Eliel Villa-Aleman, E

    2008-06-10

    Semi-conducting CdZnTe (or CZT) crystals can be used in a variety of detector-type applications. CZT shows great promise for use as a gamma radiation spectrometer. However, its performance is adversely affected by point defects, structural and compositional heterogeneities within the crystals, such as twinning, pipes, grain boundaries (polycrystallinity), secondary phases and in some cases, damage caused by external forces. One example is damage that occurs during characterization of the surface by a laser during Raman spectroscopy. Even minimal laser power can cause Te enriched areas on the surface to appear. The Raman spectra resulting from measurements at moderate intensity laser power show large increases in peak intensity that is attributed to Te. Atomic Force Microscopy (AFM) was used to characterize the extent of damage to the CZT crystal surface following exposure to the Raman laser. AFM data reveal localized surface damage in the areas exposed to the Raman laser beam. The degree of surface damage to the crystal is dependent on the laser power, with the most observable damage occurring at high laser power. Moreover, intensity increases in the Te peaks of the Raman spectra are observed even at low laser power with little to no visible damage observed by AFM. AFM results also suggest that exposure to the same amount of laser power yields different amounts of surface damage depending on whether the exposed surface is the Te terminating face or the Cd terminating face of CZT.

  15. Applications of CdTe to nuclear medicine. Final report

    SciTech Connect

    Entine, G.

    1985-05-07

    Uses of cadmium telluride (CdTe) nuclear detectors in medicine are briefly described. They include surgical probes and a system for measuring cerebral blood flow in the intensive care unit. Other uses include nuclear dentistry, x-ray exposure control, cardiology, diabetes, and the testing of new pharmaceuticals. (ACR)

  16. Progress in the development of large-area modular 64 x 64 CdZnTe imaging arrays for nuclear medicine

    SciTech Connect

    Matherson, K.J.; Barber, H.B.; Barrett, H.H.; Eskin, J.D.; Dereniak, E.L.; Marks, D.G.; Woolfenden, J.M.; Young, E.T.; Augustine, F.L.

    1998-06-01

    Previous efforts by this group have demonstrated the potential of hybrid semiconductor detector arrays for use in gamma-ray imaging applications. In this paper, the author describes progress in the development of a prototype imaging system consisting of a 64 x 64-pixel CdZnTe detector array mated to a multiplexer readout circuit that was custom designed for their nuclear medicine application. The detector array consists of a 0.15 cm thick slab of CdZnTe which has a 64 x 64 array of 380 {micro}m square pixel electrodes on one side produced by photolithography; the other side has a continuous electrode biased at {minus}150 V. Electrical connections between the detector electrodes and corresponding multiplexer bump pads are made with indium bump bonds. Although the CdZnTe detector arrays characterized in this paper are room-temperature devices, a slight amount of cooling is necessary to reduce thermally generated dark current in the detectors. Initial tests show that this prototype imager functions well with more than 90% of its pixels operating. The device is an excellent imager; phantom images have a spatial resolution of 1.5 mm, limited by the collimator bore.

  17. Gamma-Ray Detectors: From Homeland Security to the Cosmos (443rd Brookhaven Lecture)

    SciTech Connect

    Bolotnikov, Aleksey

    2008-12-03

    Many radiation detectors are first developed for homeland security or industrial applications. Scientists, however, are continuously realizing new roles that these detectors can play in high-energy physics and astrophysics experiments. On Wednesday, December 3, join presenter Aleksey Bolotnikov, a physicist in the Nonproliferation and National Security Department (NNSD) and a co-inventor of the cadmium-zinc-telluride Frisch-ring (CdZnTe) detector, for the 443rd Brookhaven Lecture, entitled Gamma-Ray Detectors: From Homeland Security to the Cosmos. In his lecture, Bolotnikov will highlight two primary radiation-detector technologies: CdZnTe detectors and fluid-Xeon (Xe) detectors.

  18. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation.

    PubMed

    Hahn, C; Weber, G; Märtin, R; Höfer, S; Kämpfer, T; Stöhlker, Th

    2016-04-01

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays - such as laser-generated plasmas - is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse. PMID:27131653

  19. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation

    NASA Astrophysics Data System (ADS)

    Hahn, C.; Weber, G.; Märtin, R.; Höfer, S.; Kämpfer, T.; Stöhlker, Th.

    2016-04-01

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays — such as laser-generated plasmas — is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse.

  20. Mercury cadmium telluride infrared detector development in India: status and issues

    NASA Astrophysics Data System (ADS)

    Singh, R. N.

    2009-05-01

    In the present paper, we describe the development of Long Wave Infrared (8-12 μm) linear and 2-D IR FPA detectors using HgCdTe for use in thermal imagers and IIR seekers. In this direction, Solid State Physics Laboratory(SSPL) (DRDO) tried to concentrate initially in the bulk growth and characterization of HgCdTe during the early eighties. Some efforts were then made to develop a LWIR photoconductive type MCT array in linear configuration with the IRFPA processed on bulk MCT crystals grown in the laboratory. Non availability of quality epilayers with the required specification followed by the denial of supply of CdTe, CdZnTe and even high purity Te by advanced countries, forced us to shift our efforts during early nineties towards development of 60 element PC IR detectors. High performance linear PC arrays were developed. A novel horizontal casting procedure was evolved for growing high quality bulk material using solid state recrystallization technique. Efforts for ultra purification of Te to 7N purity with the help of a sister concern has made it possible to have this material indigenously. Having succeded in the technology for growing single crystalline CdZnTe with (111) orientation and LPE growth of HgCdTe epilayers on CdZnTe substrates an attempt was made to establish the fabrication of 2D short PV arrays showing significant IR response. Thus a detailed technological knowhow for passivation, metallization, ion implanted junction formation, etc. was generated. Parallel work on the development of a matching CCD Mux readout in silicon by Semiconductor Complex Limited was also completed which was tested first in stand-alone mode followed by integration with IRFPAs through indigenously-developed indium bumps. These devices were integrated into an indigenously fabricated glass dewar cooled by a self-developed JT minicooler. In recent years, the LPE (Liquid Phase Epitaxy) growth from Terich route has been standardized for producing epitaxial layers with high

  1. Simulation of charge transport in pixelated CdTe

    NASA Astrophysics Data System (ADS)

    Kolstein, M.; Ariño, G.; Chmeissani, M.; De Lorenzo, G.

    2014-12-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). The design is based on the use of a pixelated CdTe Schottky detector to have optimal energy and spatial resolution. An individual read-out channel is dedicated for each detector voxel of size 1 × 1 × 2 mm3 using an application-specific integrated circuit (ASIC) which the VIP project has designed, developed and is currently evaluating experimentally. The behaviour of the signal charge carriers in CdTe should be well understood because it has an impact on the performance of the readout channels. For this purpose the Finite Element Method (FEM) Multiphysics COMSOL software package has been used to simulate the behaviour of signal charge carriers in CdTe and extract values for the expected charge sharing depending on the impact point and bias voltage. The results on charge sharing obtained with COMSOL are combined with GAMOS, a Geant based particle tracking Monte Carlo software package, to get a full evaluation of the amount of charge sharing in pixelated CdTe for different gamma impact points.

  2. Analysis of Etched CdZnTe Substrates

    NASA Astrophysics Data System (ADS)

    Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

    2016-06-01

    State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

  3. Analysis of Etched CdZnTe Substrates

    NASA Astrophysics Data System (ADS)

    Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

    2016-09-01

    State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

  4. Measurement of the electrical properties of a polycrystalline cadmium telluride for direct conversion flat panel x-ray detector

    NASA Astrophysics Data System (ADS)

    Oh, K. M.; kim, D. K.; Shin, J. W.; Heo, S. U.; Kim, J. S.; Park, J. G.; Nam, S. H.

    2014-01-01

    Cadmium telluride (CdTe) is one of the best candidate direct conversion material for medical X-ray application because it satisfies the requirements of direct conversion x-ray material such as high atomic absorption, density, bandgap energy, work fuction, and resistivity. With such properties, single crystal CdTe exhibits high quantum efficiency and charge collection efficiency. However, for the development of low-cost large area detector, the study of the improvement of polycrystalline CdTe property is desirable. In this study, in order to improve the properties of polycrystalline CdTe, we produced polycrystalline CdTe with different kinds of raw materials, high purity Cd and Te powder compounds and bulk CdTe compound synthesized from single crystal CdTe. The electric properties including resistivity, x-ray sensitivity, and charge transport properties were investigated. As a result, polycrystalline CdTe exhibited simular level of resistivity and x-ray sensitivity to single crystal CdTe. The carrier transport properties of polycrystalline CdTe showed poorer properties than those of single crystal CdTe due to significant charge trapping. However, the polycrystalline CdTe fabricated with bulk CdTe compound synthesized from single crystal CdTe showed better charge transport properties than the polycrystalline CdTe fabricated with CdTe powder compounds. This is suitable for diagnostic x-ray detectors, especially for digital fluoroscopy.

  5. Mechanisms of the passage of dark currents through Cd(Zn)Te semi-insulating crystals

    NASA Astrophysics Data System (ADS)

    Sklyarchuk, V.; Fochuk, P.; Rarenko, I.; Zakharuk, Z.; Sklyarchuk, O.; Nykoniuk, Ye.; Rybka, A.; Kutny, V.; Bolotnikov, A. E.; James, R. B.

    2014-09-01

    We investigated the passage of dark currents through semi-insulating crystals of Cd(Zn)Te with weak n-type conductivity that are used widely as detectors of ionizing radiation. The crystals were grown from a tellurium solution melt at 800 оС by the zone-melting method, in which a polycrystalline rod in a quartz ampoule was moved through a zone heater at a rate of 2 mm per day. The synthesis of the rod was carried out at ~1150 оС. We determined the important electro-physical parameters of this semiconductor, using techniques based on a parallel study of the temperature dependence of current-voltage characteristics in both the ohmic and the space-charge-limited current regions. We established in these crystals the relationship between the energy levels and the concentrations of deep-level impurity states, responsible for dark conductivity and their usefulness as detectors.

  6. Pixellated Cd(Zn)Te high-energy X-ray instrument

    PubMed Central

    Seller, P.; Bell, S.; Cernik, R.J.; Christodoulou, C.; Egan, C.K.; Gaskin, J.A.; Jacques, S.; Pani, S.; Ramsey, B.D.; Reid, C.; Sellin, P.J.; Scuffham, J.W.; Speller, R.D.; Wilson, M.D.; Veale, M.C.

    2012-01-01

    We have developed a pixellated high energy X-ray detector instrument to be used in a variety of imaging applications. The instrument consists of either a Cadmium Zinc Telluride or Cadmium Telluride (Cd(Zn)Te) detector bump-bonded to a large area ASIC and packaged with a high performance data acquisition system. The 80 by 80 pixels each of 250 μm by 250 μm give better than 1 keV FWHM energy resolution at 59.5 keV and 1.5 keV FWHM at 141 keV, at the same time providing a high speed imaging performance. This system uses a relatively simple wire-bonded interconnection scheme but this is being upgraded to allow multiple modules to be used with very small dead space. The readout system and the novel interconnect technology is described and how the system is performing in several target applications. PMID:22737179

  7. Effect of charge trapping on effective carrier lifetime in compound semiconductors: High resistivity CdZnTe

    SciTech Connect

    Kamieniecki, Emil

    2014-11-21

    The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is the trapping of charge carriers. The charge trapping affects energy resolution through the carrier lifetime more than through the mobility. Conventionally, the effective carrier lifetime is determined using a 2-step process based on measurement of the mobility-lifetime product (μτ) and determining drift mobility using time-of-flight measurements. This approach requires fabrication of contacts on the sample. A new RF-based pulse rise-time method, which replaces this 2-step process with a single non-contact direct measurement, is discussed. The application of the RF method is illustrated with high-resistivity detector-grade CdZnTe crystals. The carrier lifetime in the measured CdZnTe, depending on the quality of the crystals, was between about 5 μs and 8 μs. These values are in good agreement with the results obtained using conventional 2-step approach. While the effective carrier lifetime determined from the initial portion of the photoresponse transient combines both recombination and trapping in a manner similar to the conventional 2-step approach, both the conventional and the non-contact RF methods offer only indirect evaluation of the effect of charge trapping in the semiconductors used in radiation detectors. Since degradation of detector resolution is associated not with trapping but essentially with detrapping of carriers, and, in particular, detrapping of holes in n-type semiconductors, it is concluded that evaluation of recombination and detrapping during photoresponse decay is better suited for evaluation of compound semiconductors used in radiation detectors. Furthermore, based on previously reported data, it is concluded that photoresponse decay in high resistivity CdZnTe at room temperature is dominated by detrapping of carriers from the states associated with one type of point defect and by recombination of carriers at one type of

  8. Preliminary Results from Small-Pixel CdZnTe and CdTe Arrays

    NASA Technical Reports Server (NTRS)

    Ramsey, B. D.; Sharma, D. P.; Meisner, J.; Austin, R. A.

    1999-01-01

    We have evaluated 2 small-pixel (0.75 mm) Cadmium-Zinc-Telluride arrays, and one Cadmium-Telluride array, all fabricated for MSFC by Metorex (Finland) and Baltic Science Institute (Riga, Latvia). Each array was optimized for operating temperature and collection bias. It was then exposed to Cadmium-109 and Iron-55 laboratory isotopes, to measure the energy resolution for each pixel and was then scanned with a finely-collimated x-ray beam, of width 50 micron, to examine pixel to pixel and inter-pixel charge collections efficiency. Preliminary results from these array tests will be presented.

  9. PC/FRAM plutonium isotopic analysis of CdTe gamma-ray spectra

    NASA Astrophysics Data System (ADS)

    Vo, D. T.; Russo, P. A.

    2002-07-01

    This paper reports the results of isotopics measurements of plutonium with the new CdTe gamma-ray spectrometer. These are the first wide-range plutonium gamma-ray isotopics analysis results obtained with other than germanium spectrometers. The CdTe spectrometer measured small plutonium reference samples in reasonable count times, covering the range from low to high burnup. The complete experimental hardware included the new, commercial, portable CdTe detector and two commercial portable multichannel analyzers. Version 4 of FRAM is the software that performed the isotopics analysis.

  10. Detectors

    DOEpatents

    Orr, Christopher Henry; Luff, Craig Janson; Dockray, Thomas; Macarthur, Duncan Whittemore; Bounds, John Alan; Allander, Krag

    2002-01-01

    The apparatus and method provide techniques through which both alpha and beta emission determinations can be made simultaneously using a simple detector structure. The technique uses a beta detector covered in an electrically conducting material, the electrically conducting material discharging ions generated by alpha emissions, and as a consequence providing a measure of those alpha emissions. The technique also offers improved mountings for alpha detectors and other forms of detectors against vibration and the consequential effects vibration has on measurement accuracy.