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Sample records for charge carrier transport

  1. Analysis of Charge Carrier Transport in Organic Photovoltaic Active Layers

    NASA Astrophysics Data System (ADS)

    Han, Xu; Maroudas, Dimitrios

    2015-03-01

    We present a systematic analysis of charge carrier transport in organic photovoltaic (OPV) devices based on phenomenological, deterministic charge carrier transport models. The models describe free electron and hole transport, trapping, and detrapping, as well as geminate charge-pair dissociation and geminate and bimolecular recombination, self-consistently with Poisson's equation for the electric field in the active layer. We predict photocurrent evolution in devices with active layers of P3HT, P3HT/PMMA, and P3HT/PS, as well as P3HT/PCBM blends, and photocurrent-voltage (I-V) relations in these devices at steady state. Charge generation propensity, zero-field charge mobilities, and trapping, detrapping, and recombination rate coefficients are determined by fitting the modeling predictions to experimental measurements. We have analyzed effects of the active layer morphology for layers consisting of both pristine drop-cast films and of nanoparticle (NP) assemblies, as well as effects on device performance of insulating NP doping in conducting polymers and of specially designed interlayers placed between an electrode and the active layer. The model predictions provide valuable input toward synthesis of active layers with prescribed morphology that optimize OPV device performance.

  2. Dispersive transport of charge carriers in disordered nanostructured materials

    NASA Astrophysics Data System (ADS)

    Sibatov, R. T.; Uchaikin, V. V.

    2015-07-01

    Dispersive transport of charge carriers in disordered nanostructured semiconductors is described in terms of integral diffusion equations nonlocal in time. Transient photocurrent kinetics is analyzed for different situations. Relation to the fractional differential approach is demonstrated. Using this relation provides specifications in interpretation of the time-of-flight data. Joint influence of morphology and energy distribution of localized states is described in frames of the trap-limited advection-diffusion on a comb structure modeling a percolation cluster.

  3. Charge carrier transport and injection across organic heterojunctions

    NASA Astrophysics Data System (ADS)

    Tsang, Sai Wing

    The discovery of highly efficient organic light-emitting diodes (OLEDs) in the 1980s has stimulated extensive research on organic semiconductors and devices. Underlying this breakthrough is the realization of the organic heterojunction (OH). Besides OLEDs, the implementation of the OH also significantly improves the power conversion efficiency in organic photovoltaic cells (OPVs). The continued technological advancements in organic electronic devices depend on the accumulation of knowledge of the intrinsic properties of organic materials and related interfaces. Among them, charge-carrier transport and carrier injection are two key factors that govern the performance of a device. This thesis mainly focuses on the charge carrier injection and transport at organic heterojunctions. The carrier transport properties of different organic materials used in this study are characterized by time-of-flight (TOF) and admittance spectroscopy (AS). An injection model is formulated by considering the carrier distribution at both sides of the interface. Using a steady-state simulation approach, the effect of accumulated charges on energy level alignment at OH is revealed. Instead of a constant injection barrier, it is found that the barrier varies with applied voltage. Moreover, an escape probability function in the injection model is modified by taking into account the total hopping rate and available hopping sites at the interface. The model predicts that the injection current at low temperature can be dramatically modified by an extremely small density of deep trap states. More importantly, the temperature dependence of the injection current is found to decrease with increasing barrier height. This suggests that extracting the barrier height from the J vs 1/T plot, as commonly employed in the literature, is problematic. These theoretical predictions are confirmed by a series of experiments on heterojunction devices with various barrier heights. In addition, the presence of deep trap states is also consistent with carrier mobility measurements at low temperature. From the point of view of application, an interface chemical doping method is proposed to engineer the carrier injection at an organic heterojunction. It is found that the injection current can be effectively increased or suppressed by introducing a thin (2 nm) doped organic layer at the interface. This technique is further extended to study the impact of an injection barrier at the OH, in OLEDs, on device performance. It is shown that a 0.3 eV injection barrier at the OH, that is normally negligible at metal/organic interface, can reduce the device efficiency by 25%. This is explained by the carrier distribution in the density-of-states at the OH. Furthermore, the carrier transport properties in a bulk heterojunction system are investigated. The bulk heterojunction consists of an interpenetrating network of a polymeric electron donor and a molecular electron acceptor. This material system has been studied in the last few years as an attractive power conversion efficiency (5% under AM 1.5) of OPV cells has been demonstrated. It is found that the electron mobility is greatly dependent on the thermal treatment of the film. Interfacial dipole effect at the heterojunction between the donor and the acceptor is proposed to be the determining factor that alters the carrier mobility in different nanoscale structures.

  4. Material simulation of charge carrier transport properties of polymer dielectrics

    NASA Astrophysics Data System (ADS)

    Unge, Mikael; Christen, Thomas; Törnkvist, Christer; ABB Corporate Research Team

    To understand electron and hole transport in solid material requires to know its electronic properties, i.e. the density of states (DOS) and whether the states are spatially localized or delocalized. The states closest to the band edges may be localized, states further away can be delocalized. This transition from localized to delocalized states determines the mobility edge, above the mobility edge the mobility is expected to be high. A real polymer is never perfect; it contains a number of oxidative states, bonding defects and molecular impurities. These imperfections yield electronic states that can appear in the band gap of the polymer, traps. Traps can be shallow, i.e. close to the band edges, from these states the charge carrier easily can jump to a state in the band edge or another shallow state. Other traps can be deep, in these states it is likely that the charge carrier remains and become immobile. All these properties related to the electronic structure of the polymer, including its defects, affects the conductivity of the polymer. Linear scaling Density Functional Theory has been applied to calculate electronic structure of amorphous polyethylene. In particular DOS, trap levels and mobility edges are studied.

  5. Charge carrier transport properties in layer structured hexagonal boron nitride

    SciTech Connect

    Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2014-10-15

    Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (~ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K). The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T{sub 0}){sup −α} with α = 3.02, satisfying the two-dimensional (2D) carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm{sup -1}), which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  6. Charge carrier injection and transport in polymer blend films

    NASA Astrophysics Data System (ADS)

    Quan, Shan Yu; Teng, Feng; Wang, DongDong; Liu, DeAng; Xu, Zheng; Wang, YongSheng; Xu, XuRong

    2005-04-01

    The steady current-voltage characteristics of single layer organic devices based on MEH-PPV and N, N'-diphenyl- N, N'-bis(4'-[ N, N-bis(naphth-1-yl)-amino]-biphenyl-4-yl)-benzidine (TPTE) blend with different TPTE concentrations was investigated. The thickness dependence of the current-voltage relationship clearly demonstrates that the current at low voltage and at high voltage are all space charge limited. The current density-electric field characteristic proves the blend polymer LEDs to operate in the tunneling-controlled model. The effective hole mobility is directly determined by space charge limited current at high voltage and increases with increasing TPTE content in the blend. The EL efficiency shows concentration dependence, which is attributed to the change of the transport of holes in the blend film.

  7. Charge carrier transport and separation in pristine and nitrogen-doped graphene nanowiggle heterostructures

    DOE PAGESBeta

    Lherbier, Aurélien; Liang, Liangbo; Charlier, Jean -Christophe; Meunier, Vincent

    2015-09-03

    Electronic structure methods are combined into a multiscale framework to investigate the electronic transport properties of recently synthesized pristine and nitrogen-doped graphene nanowiggles and their heterojunctions deposited on a substrate. The real-space Kubo-Greenwood transport calculations reveal that charge carrier mobilities reach values up to 1,000 cm2 V–1 s–1 as long as the amount of substrate impurities is sufficiently low. Owing to their type-II band alignment, atomically precise heterostructures between pristine and N-doped graphene nanowiggles are predicted to be excellent candidates for charge carrier separation devices with potential in photoelectric and photocatalytic water splitting applications.

  8. Analysis of Charge Carrier Transport in Organic Photovoltaic Thin Films and Nanoparticle Assemblies

    NASA Astrophysics Data System (ADS)

    Han, Xu; Maroudas, Dimitrios

    2014-03-01

    We present a systematic analysis of charge carrier transport in organic photovoltaic (OPV) devices based on phenomenological charge carrier transport models. These transient drift-diffusion-reaction models describe electron and hole transport and their trapping, detrapping, and recombination self-consistently with Poisson's equation for the electric field in the active layer. We predict transient currents in devices with active layers composed of P3HT, PCBM, and PBTDV polymers, as well as donor-acceptor blends. The propensity of the material to generate charge, zero-field carrier mobilities, as well as trapping, detrapping, and recombination rate coefficients are determined by fitting the modeling predictions to experimental data of photocurrent evolution. We have investigated effects of material structure and morphology by comparing the fitting outcomes for active layers consisting of both thin films and nanoparticle assemblies. We have also analyzed the effect on charge carrier transport of nanoparticle surface characteristics, as well as of thermal annealing of both thin-film and nanoparticle-assembly active layers. The model predictions provide valuable input toward synthesis of new nanoparticle assemblies that lead to improved OPV device performance.

  9. Charge carrier transport in molecularly doped polycarbonate as a test case for the dipolar glass model

    NASA Astrophysics Data System (ADS)

    Novikov, S. V.; Tyutnev, A. P.

    2013-03-01

    We present the results of Monte Carlo simulations of the charge carrier transport in a disordered molecular system containing spatial and energetic disorders using the dipolar glass model. Model parameters of the material were chosen to fit a typical polar organic photoconductor polycarbonate doped with 30% of aromatic hydrazone, whose transport properties are well documented in literature. Simulated carrier mobility demonstrates a usual Poole-Frenkel field dependence and its slope is very close to the experimental value without using any adjustable parameter. At room temperature transients are universal with respect to the electric field and transport layer thickness. At the same time, carrier mobility does not depend on the layer thickness and transients develop a well-defined plateau where the current does not depend on time, thus demonstrating a non-dispersive transport regime. Tails of the transients decay as power law with the exponent close to -2. This particular feature indicates that transients are close to the boundary between dispersive and non-dispersive transport regimes. Shapes of the simulated transients are in very good agreement with the experimental ones. In summary, we provide a first verification of a self-consistency of the dipolar glass transport model, where major transport parameters, extracted from the experimental transport data, are then used in the transport simulation, and the resulting mobility field dependence and transients are in very good agreement with the initial experimental data.

  10. Charge carrier transport and separation in pristine and nitrogen-doped graphene nanowiggle heterostructures

    SciTech Connect

    Lherbier, Aurélien; Liang, Liangbo; Charlier, Jean -Christophe; Meunier, Vincent

    2015-09-03

    Electronic structure methods are combined into a multiscale framework to investigate the electronic transport properties of recently synthesized pristine and nitrogen-doped graphene nanowiggles and their heterojunctions deposited on a substrate. The real-space Kubo-Greenwood transport calculations reveal that charge carrier mobilities reach values up to 1,000 cm2 V–1 s–1 as long as the amount of substrate impurities is sufficiently low. Owing to their type-II band alignment, atomically precise heterostructures between pristine and N-doped graphene nanowiggles are predicted to be excellent candidates for charge carrier separation devices with potential in photoelectric and photocatalytic water splitting applications.

  11. Charge carrier transport and photogeneration in P3HT:PCBM photovoltaic blends.

    PubMed

    Laquai, Frédéric; Andrienko, Denis; Mauer, Ralf; Blom, Paul W M

    2015-06-01

    This article reviews the charge transport and photogeneration in bulk-heterojunction solar cells made from blend films of regioregular poly(3-hexylthiophene) (RR-P3HT) and methano-fullerene (PCBM). The charge transport, specifically the hole mobility in the RR-P3HT phase of the polymer:fullerene photovoltaic blend, is dramatically affected by thermal annealing. The hole mobility increases more than three orders of magnitude and reaches a value of up to 2 × 10(-4) cm(2) V(-1) s(-1) after the thermal annealing process as a result of an improved semi-crystallinity of the film. This significant increase of the hole mobility balances the electron and hole mobilities in a photovoltaic blend in turn reducing space-charge formation, and this is the most important factor for the strong enhancement of the photovoltaic efficiency compared to an as cast, that is, non-annealed device. In fact, the balanced charge carrier mobility in RR-P3HT:PCBM blends in combination with a field- and temperature-independent charge carrier generation and greatly reduced non-geminate recombination explains the large quantum efficiencies mea-sured in P3HT:PCBM photovoltaic devices. PMID:25940132

  12. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors

    NASA Astrophysics Data System (ADS)

    Lu, Nianduan; Li, Ling; Banerjee, Writam; Sun, Pengxiao; Gao, Nan; Liu, Ming

    2015-07-01

    Charge carrier hopping transport is generally taken from Miller-Abrahams and Marcus transition rates. Based on the Miller-Abrahams theory and nearest-neighbour range hopping theory, Apsley and Hughes developed a concise calculation method (A-H method) to study the hopping conduction in disordered systems. Here, we improve the A-H method to investigate the charge carrier hopping transport by introducing polaron effect and electric field based on Marcus theory and variable-range hopping theory. This improved method can well describe the contribution of polaron effect, energetic disorder, carrier density, and electric field to the charge carrier transport in disordered organic semiconductor. In addition, the calculated results clearly show that the charge carrier mobility represents different polaron effect dependence with the polaron activation energy and decreases with increasing electric field strength for large fields.

  13. Concentration dependence of the transport energy level for charge carriers in organic semiconductors

    NASA Astrophysics Data System (ADS)

    Oelerich, J. O.; Huemmer, D.; Weseloh, M.; Baranovskii, S. D.

    2010-10-01

    The concept of the transport energy (TE) has proven to be one of the most powerful theoretical approaches to describe charge transport in organic semiconductors. In the recent paper L. Li, G. Meller, and H. Kosina [Appl. Phys. Lett. 92, 013307 (2008)] have studied the effect of the partially filled localized states on the position of the TE level. We show that the position of the TE is essentially different to the one suggested by L. Li, G. Meller, and H. Kosina [Appl. Phys. Lett. 92, 013307 (2008)] We further modify the standard TE approach taking into account the percolation nature of the transport path. Our calculations show that the TE becomes dependent on the concentration of charge carriers n at much higher n values than those, at which the carrier mobility already strongly depends on n. Hence the calculations of the concentration-dependent carrier mobility cannot be performed within the approach, in which only the concentration dependence of the TE is taken into account.

  14. Improvement of the charge-carrier transport property of polycrystalline CdTe for digital fluoroscopy

    NASA Astrophysics Data System (ADS)

    Oh, K. M.; Heo, Y. J.; Kim, D. K.; Kim, J. S.; Shin, J. W.; Lee, G. H.; Nam, S. H.

    2014-05-01

    Minimizing the radiation impact to the patient is currently an important issue in medical imaging. Particularly, in case of X-ray fluoroscopy, the patient is exposed to high X-ray dose because a large number of images is required in fluoroscopic procedures. In this regard, a direct-conversion X-ray sensor offers the advantages of high quantum efficiency, X-ray sensitivity, and high spatial resolution. In particular, an X-ray sensor in fluoroscopy operates at high frame rate, in the range from 30 to 60 image frames per second. Therefore, charge-carrier transport properties and signal lag are important factors for the development of X-ray sensors in fluoroscopy. In this study, in order to improve the characteristics of polycrystalline cadmium telluride (CdTe), CdTe films were prepared by thermal evaporation and RF sputtering. The deposition was conducted to form a CdTeO3 layer on top of a CdTe film. The role of CdTeO3 is not only to improve the charge-carrier transport by increasing the life-time but also to reduce the leakage current of CdTe films by acting as a passivation layer. In this paper, to establish the effect of a thin oxide layer on top of a CdTe film, the morphological and electrical properties including charge-carrier transport and signal lag were investigated by means of X-ray diffraction, X-ray photoemission spectroscopy, and resistivity measurements.

  15. Application of admittance spectroscopy to evaluate carrier mobility in organic charge transport materials

    NASA Astrophysics Data System (ADS)

    Tsang, S. W.; So, S. K.; Xu, J. B.

    2006-01-01

    We examine the feasibility of admittance spectroscopy (AS) and susceptance analysis in the determination of the charge-carrier mobility in an organic material. The complex admittance of the material is analyzed as a function of frequency in AS. We found that the susceptance, which is the imaginary part of the complex admittance, is related to the carrier transport properties of the materials. A plot of the computer-simulated negative differential susceptance versus frequency yields a maximum at a frequency τr-1. The position of the maximum τr-1 is related to the average carrier transit time τdc by τdc=0.56τr. Thus, knowledge of τr can be used to determine the carrier mobility in the material. Devices with the structure ITO/4,4',4'' -tris[N, -(3-methylphenyl)-N-phenylamino] triphenylamine/Ag have been designed to investigate the validity of the susceptance analysis in the hole mobility determination. The hole mobilities were measured both as functions of the electric field and the temperature. The hole mobility data extracted by susceptance analysis were in excellent agreement with those independently obtained from time-of-flight (TOF) measurements. Using the temperature dependence results, we further analyzed the mobility data by the Gaussian disorder model (GDM). The GDM disorder parameters are also in good agreement with those determined from TOF.

  16. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering.

    PubMed

    Shi, Dong; Qin, Xiang; Li, Yuan; He, Yao; Zhong, Cheng; Pan, Jun; Dong, Huanli; Xu, Wei; Li, Tao; Hu, Wenping; Brédas, Jean-Luc; Bakr, Osman M

    2016-04-01

    We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2',7,7'-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9'-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD's paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD's intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells. PMID:27152342

  17. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

    PubMed Central

    Shi, Dong; Qin, Xiang; Li, Yuan; He, Yao; Zhong, Cheng; Pan, Jun; Dong, Huanli; Xu, Wei; Li, Tao; Hu, Wenping; Brédas, Jean-Luc; Bakr, Osman M.

    2016-01-01

    We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells. PMID:27152342

  18. Direct Observation of the Hole Carriers in DNA Photoinduced Charge Transport.

    PubMed

    Harris, Michelle A; Mishra, Ashutosh Kumar; Young, Ryan M; Brown, Kristen E; Wasielewski, Michael R; Lewis, Frederick D

    2016-05-01

    The excited state behavior of DNA hairpins possessing a diphenylacetylenedicarboxamide (DPA) linker separated from a single guanine-cytosine (G-C) base pair by zero-to-six adenine-thymine (A-T) base pairs has been investigated. In the case of hairpins with zero or one A-T separating DPA and G, formation of both DPA anion radical (DPA(-•)) and G cation radical (G(+•)) are directly observed and characterized by their transient absorption and stimulated Raman spectra. For hairpins with two or more intervening A-T, the transient absorption spectra of DPA(-•) and the adenine polaron (An(+•)) are observed. In addition to characterization of the hole carriers, the dynamics of each step in the charge separation and charge recombination process as well as the overall efficiency of charge separation have been determined, thus providing a complete account of the mechanism and dynamics of photoinduced charge transport in these DNA hairpins. PMID:27082662

  19. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations

    SciTech Connect

    Song, Linze; Shi, Qiang

    2015-05-07

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated.

  20. Facet-selective charge carrier transport, deactivation mechanism and stabilization of a Cu2O photo-electro-catalyst.

    PubMed

    Li, Yang; Yun, Xiaogang; Chen, Hong; Zhang, Wenqin; Li, Yongdan

    2016-03-14

    A facet-dependent photo-deactivation mechanism of Cu2O was verified and reported, which is caused by the facet-dependent charge carrier transport. During irradiation, the {100} and {110} crystal facets are selectively corroded by the photo-generated holes, while the {111} facets are comparatively stable. PMID:26898270

  1. Insights from transport modeling of unusual charge carrier behavior of PDTSiTzTz:PC71BM bulk heterojunction materials

    NASA Astrophysics Data System (ADS)

    Slobodyan, Oleksiy; Moench, Sarah; Liang, Kelly; Danielson, Eric; Holliday, Bradley; Dodabalapur, Ananth

    2015-03-01

    Development of hole-transporting copolymers for use in bulk heterojunctions (BHJs) has significantly improved organic solar cell performance. Despite advances on the materials side, the physics of charge carrier transport remains unsettled. Intrigued by its ability to maintain high fill factors in thick active layers, we studied the copolymer poly[2-(5-(4,4-dioctyl-4H-silolo[3,2-b:4,5-b’]dithiophen-2-yl)-3-tetradecylthiophen-2-yl)- 5-(3-tetradecylthiophen-2-yl)thiazolo[5,4-d]thiazole] (PDTSiTzTz) blended with PC71BM. Results show mobilities which are carrier-concentration-dependent and characterized by a negative Poole-Frenkel effect. Such behavior is not described by current carrier transport models. Established transport mechanisms like multiple-trap-and-release or variable range hopping yield dependence of mobility on carrier concentration. However, a more basic model like Gaussian distribution model (GDM) is needed to produce the negative Poole-Frenkel effect, though GDM cannot describe carrier-concentration-dependent mobility. We have combined key aspects of existing models to create a unified transport model capable of describing phenomena observed in PDTSiTzTz:PC71BM. This model can be used to address open questions about transport physics of organic BHJ materials. U.S. Department of Energy, Award Number DE-SC0001091.

  2. Electric field dependence of charge carrier hopping transport within the random energy landscape in an organic field effect transistor

    NASA Astrophysics Data System (ADS)

    Fishchuk, I. I.; Kadashchuk, A.; Ullah, Mujeeb; Sitter, H.; Pivrikas, A.; Genoe, J.; Bässler, H.

    2012-07-01

    We extended our analytical effective medium theory [Phys. Rev. BPRBMDO0163-182910.1103/PhysRevB.81.045202 81, 045202 (2010)] to describe the temperature-dependent hopping charge carrier mobility at arbitrary electric fields in the large carrier density regime. Special emphasis was made to analyze the influence of the lateral electric field on the Meyer-Neldel (MN) phenomenon observed when studying the charge mobilities in thin-film organic field-effect transistors (OFET). Our calculations are based on the average hopping transition time approach, generalized for large carrier concentration limit finite fields, and taking into account also spatial energy correlations. The calculated electric field dependences of the hopping mobility at large carrier concentrations are in good agreement with previous computer simulations data. The shift of the MN temperature in an OFET upon applied electric field is shown to be a consequence of the spatial energy correlation in the organic semiconductor film. Our calculations show that the phenomenological Gill equation is clearly inappropriate for describing conventional charge carrier transport at low carrier concentrations. On the other hand a Gill-type behavior has been observed in a temperature range relevant for measurements of the charge carrier mobility in OFET structures. Since the present model is not limited to zero-field mobility, it allows a more accurate evaluation of important material parameters from experimental data measured at a given electric field. In particular, we showed that both the MN and Gill temperature can be used for estimating the width of the density of states distribution.

  3. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations.

    PubMed

    Song, Linze; Shi, Qiang

    2015-05-01

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated. PMID:25956086

  4. A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells

    NASA Astrophysics Data System (ADS)

    Bozyigit, Deniz; Lin, Weyde M. M.; Yazdani, Nuri; Yarema, Olesya; Wood, Vanessa

    2015-01-01

    Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic-organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current-voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode-nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices.

  5. A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells.

    PubMed

    Bozyigit, Deniz; Lin, Weyde M M; Yazdani, Nuri; Yarema, Olesya; Wood, Vanessa

    2015-01-01

    Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic-organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current-voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode-nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices. PMID:25625647

  6. A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells

    PubMed Central

    Bozyigit, Deniz; Lin, Weyde M. M.; Yazdani, Nuri; Yarema, Olesya; Wood, Vanessa

    2015-01-01

    Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic–organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current–voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode–nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices. PMID:25625647

  7. Charge carrier transport and collection enhancement of copper indium diselenide photoactive nanoparticle-ink by laser crystallization

    SciTech Connect

    Nian, Qiong; Cheng, Gary J.; Zhang, Martin Y.; Wang, Yuefeng; Das, Suprem R.; Bhat, Venkataprasad S.; Huang, Fuqiang

    2014-09-15

    There has been increasing needs for cost-effective and high performance thin film deposition techniques for photovoltaics. Among all deposition techniques, roll-to-roll printing of nanomaterials has been a promising method. However, the printed thin film contains many internal imperfections, which reduce the charge-collection performance. Here, direct pulse laser crystallization (DPLC) of photoactive nanoparticles-inks is studied to meet this challenge. In this study, copper indium selenite (CIS) nanoparticle-inks is applied as an example. Enhanced crystallinity, densified structure in the thin film is resulted after DLPC under optimal conditions. It is found that the decreased film internal imperfections after DPLC results in reducing scattering and multi-trapping effects. Both of them contribute to better charge-collection performance of CIS absorber material by increasing extended state mobility and carrier lifetime, when carrier transport and kinetics are coupled. Charge carrier transport was characterized after DPLC, showing mobility increased by 2 orders of magnitude. Photocurrent under AM1.5 illumination was measured and shown 10 times enhancement of integrated power density after DPLC, which may lead to higher efficiency in photo-electric energy conversion.

  8. Charge carrier transport and collection enhancement of copper indium diselenide photoactive nanoparticle-ink by laser crystallization

    NASA Astrophysics Data System (ADS)

    Nian, Qiong; Zhang, Martin Y.; Wang, Yuefeng; Das, Suprem R.; Bhat, Venkataprasad S.; Huang, Fuqiang; Cheng, Gary J.

    2014-09-01

    There has been increasing needs for cost-effective and high performance thin film deposition techniques for photovoltaics. Among all deposition techniques, roll-to-roll printing of nanomaterials has been a promising method. However, the printed thin film contains many internal imperfections, which reduce the charge-collection performance. Here, direct pulse laser crystallization (DPLC) of photoactive nanoparticles-inks is studied to meet this challenge. In this study, copper indium selenite (CIS) nanoparticle-inks is applied as an example. Enhanced crystallinity, densified structure in the thin film is resulted after DLPC under optimal conditions. It is found that the decreased film internal imperfections after DPLC results in reducing scattering and multi-trapping effects. Both of them contribute to better charge-collection performance of CIS absorber material by increasing extended state mobility and carrier lifetime, when carrier transport and kinetics are coupled. Charge carrier transport was characterized after DPLC, showing mobility increased by 2 orders of magnitude. Photocurrent under AM1.5 illumination was measured and shown 10 times enhancement of integrated power density after DPLC, which may lead to higher efficiency in photo-electric energy conversion.

  9. Charge carrier generation and transport in different stoichiometry APFO3:PC61BM solar cells.

    PubMed

    Pranculis, Vytenis; Infahsaeng, Yingyot; Tang, Zheng; Deviis, Andrius; Vithanage, Dimali A; Ponseca, Carlito S; Ingans, Olle; Yartsev, Arkady P; Gulbinas, Vidmantas; Sundstrm, Villy

    2014-08-13

    In this paper we studied carrier drift dynamics in APFO3:PC61BM solar cells of varied stoichiometry (2:1, 1:1, and 1:4 APFO3:PC61BM) over a wide time range, from subpicoseconds to microseconds with a combination of ultrafast optical electric field probing and conventional transient integrated photocurrent techniques. Carrier drift and extraction dynamics are strongly stoichiometry dependent: the speed of electron or hole drift increases with higher concentration of PC61BM or polymer, respectively. The electron extraction from a sample with 80% PC61BM takes place during hundreds of picoseconds, but slows down to sub-microseconds in a sample with 33% PC61BM. The hole extraction is less stoichiometry dependent: it varies form sub-nanoseconds to tens of nanoseconds when the PC61BM concentration changes from 33% to 80%. The electron extraction rate correlates with the conversion efficiency of solar cells, leading to the conclusion that fast electron motion is essential for efficient charge carrier separation preventing their geminate recombination. PMID:25025885

  10. Investigation of charge carrier transport and charge sharing in X-ray semiconductor pixel detectors such as Medipix2

    NASA Astrophysics Data System (ADS)

    Korn, Alexander; Firsching, Markus; Anton, Gisela; Hoheisel, Martin; Michel, Thilo

    2007-06-01

    The output of X-ray semiconductor pixel detectors such as Medipix2 depends on various effects, such as the primary energy distribution inside the sensor layer, the diffusion of the generated charge carriers during the drift, the discrimination of the input signal by a threshold, and detection of scattered quanta originating from the detector parts behind the sensor layer. In this study we introduce an advanced Monte Carlo simulation including all these effects. The simulation was verified for energy distribution functions by performing threshold scans of monoenergetic radiation with the Medipix2.

  11. Charge carrier thermalization in organic diodes

    NASA Astrophysics Data System (ADS)

    van der Kaap, N. J.; Koster, L. J. A.

    2016-01-01

    Charge carrier mobilities of organic semiconductors are often characterized using steady-state measurements of space charge limited diodes. These measurements assume that charge carriers are in a steady-state equilibrium. In reality, however, energetically hot carriers are introduces by photo-excitation and injection into highly energetic sites from the electrodes. These carriers perturb the equilibrium density of occupied states, and therefore change the overall charge transport properties. In this paper, we look into the effect of energetically hot carriers on the charge transport in organic semiconductors using steady state kinetic Monte Carlo simulations. For injected hot carriers in a typical organic semiconductor, rapid energetic relaxation occurs in the order of tens of nanoseconds, which is much faster than the typical transit time of a charge carrier throught the device. Furthermore, we investigate the impact of photo-generated carriers on the steady-state mobility. For a typical organic voltaic material, an increase in mobility of a factor of 1.1 is found. Therefore, we conclude that the impact of energetically hot carriers on normal device operation is limited.

  12. Charge carrier thermalization in organic diodes.

    PubMed

    van der Kaap, N J; Koster, L J A

    2016-01-01

    Charge carrier mobilities of organic semiconductors are often characterized using steady-state measurements of space charge limited diodes. These measurements assume that charge carriers are in a steady-state equilibrium. In reality, however, energetically hot carriers are introduces by photo-excitation and injection into highly energetic sites from the electrodes. These carriers perturb the equilibrium density of occupied states, and therefore change the overall charge transport properties. In this paper, we look into the effect of energetically hot carriers on the charge transport in organic semiconductors using steady state kinetic Monte Carlo simulations. For injected hot carriers in a typical organic semiconductor, rapid energetic relaxation occurs in the order of tens of nanoseconds, which is much faster than the typical transit time of a charge carrier throught the device. Furthermore, we investigate the impact of photo-generated carriers on the steady-state mobility. For a typical organic voltaic material, an increase in mobility of a factor of 1.1 is found. Therefore, we conclude that the impact of energetically hot carriers on normal device operation is limited. PMID:26791095

  13. Charge carrier thermalization in organic diodes

    PubMed Central

    van der Kaap, N. J.; Koster, L. J. A.

    2016-01-01

    Charge carrier mobilities of organic semiconductors are often characterized using steady-state measurements of space charge limited diodes. These measurements assume that charge carriers are in a steady-state equilibrium. In reality, however, energetically hot carriers are introduces by photo-excitation and injection into highly energetic sites from the electrodes. These carriers perturb the equilibrium density of occupied states, and therefore change the overall charge transport properties. In this paper, we look into the effect of energetically hot carriers on the charge transport in organic semiconductors using steady state kinetic Monte Carlo simulations. For injected hot carriers in a typical organic semiconductor, rapid energetic relaxation occurs in the order of tens of nanoseconds, which is much faster than the typical transit time of a charge carrier throught the device. Furthermore, we investigate the impact of photo-generated carriers on the steady-state mobility. For a typical organic voltaic material, an increase in mobility of a factor of 1.1 is found. Therefore, we conclude that the impact of energetically hot carriers on normal device operation is limited. PMID:26791095

  14. Massively parallel kinetic Monte Carlo simulations of charge carrier transport in organic semiconductors

    NASA Astrophysics Data System (ADS)

    van der Kaap, N. J.; Koster, L. J. A.

    2016-02-01

    A parallel, lattice based Kinetic Monte Carlo simulation is developed that runs on a GPGPU board and includes Coulomb like particle-particle interactions. The performance of this computationally expensive problem is improved by modifying the interaction potential due to nearby particle moves, instead of fully recalculating it. This modification is achieved by adding dipole correction terms that represent the particle move. Exact evaluation of these terms is guaranteed by representing all interactions as 32-bit floating numbers, where only the integers between -222 and 222 are used. We validate our method by modelling the charge transport in disordered organic semiconductors, including Coulomb interactions between charges. Performance is mainly governed by the particle density in the simulation volume, and improves for increasing densities. Our method allows calculations on large volumes including particle-particle interactions, which is important in the field of organic semiconductors.

  15. Localized Charge Carrier Transport Properties of Zn1-x Ni x O/NiO Two-Phase Composites

    NASA Astrophysics Data System (ADS)

    Joshi, D. C.; Dasari, K.; Nayak, S.; Palai, R.; Suresh, P.; Thota, S.

    2015-12-01

    We report the localized charge carrier transport of two-phase composite Zn1-x Ni x O/NiO (0 ≤ x ≤ 1) using the temperature dependence of ac-resistivity ρ ac(T) across the Néel temperature T N (= 523 K) of nickel oxide. Our results provide strong evidence to the variable range hopping of charge carriers between the localized states through a mechanism involving spin-dependent activation energies. The temperature variation of carrier hopping energy ɛ h(T) and nearest-neighbor exchange-coupling parameter J ij(T) evaluated from the small poleron model exhibits a well-defined anomaly across T N. For all the composite systems, the average exchange-coupling parameter (J ij)AVG nearly equals to 70 meV which is slightly greater than the 60-meV exciton binding energy of pure zinc oxide. The magnitudes of ɛ h (˜0.17 eV) and J ij (˜11 meV) of pure NiO synthesized under oxygen-rich conditions are consistent with the previously reported theoretical estimation based on Green's function analysis. A systematic correlation between the oxygen stoichiometry and, ɛ h(T) and J ij(T) is discussed.

  16. Localized Charge Carrier Transport Properties of Zn1- x Ni x O/NiO Two-Phase Composites

    NASA Astrophysics Data System (ADS)

    Joshi, D. C.; Dasari, K.; Nayak, S.; Palai, R.; Suresh, P.; Thota, S.

    2016-04-01

    We report the localized charge carrier transport of two-phase composite Zn1- x Ni x O/NiO (0 ≤ x ≤ 1) using the temperature dependence of ac-resistivity ρ ac(T) across the Néel temperature T N (= 523 K) of nickel oxide. Our results provide strong evidence to the variable range hopping of charge carriers between the localized states through a mechanism involving spin-dependent activation energies. The temperature variation of carrier hopping energy ɛ h(T) and nearest-neighbor exchange-coupling parameter J ij(T) evaluated from the small poleron model exhibits a well-defined anomaly across T N. For all the composite systems, the average exchange-coupling parameter (J ij)AVG nearly equals to 70 meV which is slightly greater than the 60-meV exciton binding energy of pure zinc oxide. The magnitudes of ɛ h (˜0.17 eV) and J ij (˜11 meV) of pure NiO synthesized under oxygen-rich conditions are consistent with the previously reported theoretical estimation based on Green's function analysis. A systematic correlation between the oxygen stoichiometry and, ɛ h(T) and J ij(T) is discussed.

  17. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

    SciTech Connect

    Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

    2014-10-21

    The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

  18. Charge-carrier transport and recombination in heteroepitaxial CdTe

    SciTech Connect

    Kuciauskas, Darius Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K.; Colegrove, Eric; Sivananthan, S.

    2014-09-28

    We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm² (Vs)⁻¹ and diffusion coefficient D of 17 cm² s⁻¹. We find limiting recombination at the epitaxial film surface (surface recombination velocity Ssurface = (2.8 ± 0.3) × 10⁵cm s ⁻¹) and at the heteroepitaxial interface (interface recombination velocity Sinterface = (4.8 ± 0.5) × 10⁵ cm s⁻¹). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

  19. The Effect of Dynamical Image Forces on The Transport Properties of Charge Carriers and Excitons in Metal-Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Cherqui, Charles

    We examine coupled metal nanoparticle/semiconductor hybrid nano-stuctures and analyze the effect that the surface response metal nanoparticles (MNP) has on the transport properties of the system. This analysis is accomplished by treating surface plasmons as quantum oscillators. We find that charge carriers traveling in the nearby semiconductors experience a repulsion due to the ground state energy of the quantum SP (QSP). This effect is shown to be the quantum analogue of the ponderomotive effect found in plasma physics. We then extend the theory to examine the transport properties of carbon nano-tube excitons in the presence of localized SPs and show that this system maps onto a Fano-Anderson Hamiltonian. Through numerical simulation, we show that the emission patterns of the system are severely modified by the presence of localized surface plasmons.

  20. Carrier separation and charge transport characteristics of reduced graphene oxide supported visible-light active photocatalysts.

    PubMed

    Vinoth, Ramalingam; Karthik, Peramaiah; Muthamizhchelvan, Chellamuthu; Neppolian, Bernaurdshaw; Ashokkumar, Muthupandian

    2016-02-21

    Extending the absorption to the visible region by tuning the optical band-gap of semiconductors and preventing charge carrier recombination are important parameters to achieve a higher efficiency in the field of photocatalysis. The inclusion of reduced graphene oxide (rGO) support in photocatalysts is one of the key strategies to address the above-mentioned issues. In this study, rGO supported AgI-mesoTiO2 photocatalysts were synthesized using a sonochemical approach. The physical effects of ultrasound not only improved the crystallinity of AgI-mesoTiO2 but also increased the surface area and loading of the AgI-mesoTiO2 nanocomposite on rGO sheets. The low intense oxygen functionalities (C-O-C and COOH groups) peak observed in the high resolution C1s spectrum of a hybrid AgI-mesoTiO2-rGO photocatalyst clearly confirmed the successful reduction of graphene oxide (GO) to rGO. The interfacial charge transfer between the rGO and the p-n junction of heterostructured photocatalysts has decreased the band-gap of the photocatalyst from 2.80 to 2.65 eV. Importantly, the integration of rGO into AgI-mesoTiO2 composites serves as a carrier separation centre and provides further insight into the electron transfer pathways of heterostructured nanocomposites. The individual effects of photo-generated electrons and holes over rGO on the photocatalytic degradation efficiency of rhodamine (RhB) and methyl orange (MO) using AgI-mesoTiO2-rGO photocatalysts were also studied. Our experimental results revealed that photo-generated superoxide (O2(-)˙) radicals are the main reactive species for the degradation of MO, whereas photo-generated holes (h(+)) are responsible for the degradation of RhB. As a result, 60% enhancement in MO degradation was observed in the presence of rGO in comparison to that of the pure AgI-mesoTiO2 photocatalyst. This is due to the good electron acceptor and the ultrafast electron transfer properties of rGO that can effectively reduce the molecular oxygen to produce a large amount of reactive O2(-)˙ radicals. However, in the case of RhB degradation, h(+) is the main reactive species which showed a slightly increased photocatalytic activity (12%) in the presence of rGO support where the role of rGO is almost negligible. This study suggests the effective roles of rGO for the degradation of organics, i.e., the rate of photocatalytic degradation also depends on the nature of compound rather than rGO support. PMID:26806337

  1. Theoretical investigation of fluorination effect on the charge carrier transport properties of fused anthra-tetrathiophene and its derivatives.

    PubMed

    Yin, Jun; Chaitanya, Kadali; Ju, Xue-Hai

    2016-03-01

    The crystal structures of known anthra-tetrathiophene (ATT) and its three fluorinated derivatives (ATT1, ATT2 and ATT3) were predicted by the Monte Carlo-simulated annealing method with the embedded electrostatic potential (ESP) charges. The most stable crystal structures were further optimized by the density functional theory with the dispersion energy (DFT-D) method. In addition, the effect of the electron-withdrawing fluorine atoms on the molecular geometry, molecular stacking, electronic and transport properties of title compounds were investigated by the density functional theory and the incoherent charge-hopping model. The calculated results show that the introduction of fluorine atoms does not affect the molecular planarity but decreases the HOMO-LUMO gap, which is beneficial to electron injection and provides more charge carrier stabilization. The improved electron mobility from ATT to ATT3 is attributed to the favorable molecular packing with strong π-π interaction and the short stacking distance. ATT2 and ATT3 exhibit remarkable angular dependence of mobilities and anisotropic behaviors. The band structures reveal that all the paths with larger transfer integrals are along the directions of large dispersions in the valence band (VB) and conduction band (CB). ATT3 has the largest electron mobility (0.48 cm(2)V(-1)s(-1)) among the four compounds, indicating that fluorination is an effective approach to improve electron transport. PMID:26774641

  2. Charge carrier transport mechanisms in perovskite CdTiO{sub 3} fibers

    SciTech Connect

    Imran, Z.; Rafiq, M. A. Hasan, M. M.

    2014-06-15

    Electrical transport properties of electrospun cadmium titanate (CdTiO{sub 3}) fibers have been investigated using ac and dc measurements. Air annealing of as spun fibers at 1000 °C yielded the single phase perovskite fibers having diameter ∼600 nm - 800 nm. Both the ac and dc electrical measurements were carried out at temperatures from 200 K – 420 K. The complex impedance plane plots revealed a single semicircular arc which indicates the interfacial effect due to grain boundaries of fibers. The dielectric properties obey the Maxwell-Wagner theory of interfacial polarization. In dc transport study at low voltages, data show Ohmic like behavior followed by space charge limited current (SCLC) with traps at higher voltages at all temperatures (200 K – 420 K). Trap density in our fibers system is N{sub t} = 6.27 × 10{sup 17} /cm{sup 3}. Conduction mechanism in the sample is governed by 3-D variable range hopping (VRH) from 200 K – 300 K. The localized density of states were found to be N(E{sub F}) = 5.51 × 10{sup 21} eV{sup −1} cm{sup −3} at 2 V. Other VRH parameters such as hopping distance (R{sub hop}) and hopping energy (W{sub hop}) were also calculated. In the high temperature range of 320 K – 420 K, conductivity follows the Arrhenius law. The activation energy found at 2 V is 0.10 eV. Temperature dependent and higher values of dielectric constant make the perovskite CdTiO{sub 3} fibers efficient material for capacitive energy storage devices.

  3. Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

    SciTech Connect

    Lim, Eunju E-mail: taguchi.d.aa@m.titech.ac.jp; Taguchi, Dai E-mail: taguchi.d.aa@m.titech.ac.jp Iwamoto, Mitsumasa E-mail: taguchi.d.aa@m.titech.ac.jp

    2014-08-18

    We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

  4. Effective Charge Carrier Utilization in Photocatalytic Conversions.

    PubMed

    Zhang, Peng; Wang, Tuo; Chang, Xiaoxia; Gong, Jinlong

    2016-05-17

    Continuous efforts have been devoted to searching for sustainable energy resources to alleviate the upcoming energy crises. Among various types of new energy resources, solar energy has been considered as one of the most promising choices, since it is clean, sustainable, and safe. Moreover, solar energy is the most abundant renewable energy, with a total power of 173 000 terawatts striking Earth continuously. Conversion of solar energy into chemical energy, which could potentially provide continuous and flexible energy supplies, has been investigated extensively. However, the conversion efficiency is still relatively low since complicated physical, electrical, and chemical processes are involved. Therefore, carefully designed photocatalysts with a wide absorption range of solar illumination, a high conductivity for charge carriers, a small number of recombination centers, and fast surface reaction kinetics are required to achieve a high activity. This Account describes our recent efforts to enhance the utilization of charge carriers for semiconductor photocatalysts toward efficient solar-to-chemical energy conversion. During photocatalytic reactions, photogenerated electrons and holes are involved in complex processes to convert solar energy into chemical energy. The initial step is the generation of charge carriers in semiconductor photocatalysts, which could be enhanced by extending the light absorption range. Integration of plasmonic materials and introduction of self-dopants have been proved to be effective methods to improve the light absorption ability of photocatalysts to produce larger amounts of photogenerated charge carriers. Subsequently, the photogenerated electrons and holes migrate to the surface. Therefore, acceleration of the transport process can result in enhanced solar energy conversion efficiency. Different strategies such as morphology control and conductivity improvement have been demonstrated to achieve this goal. Fine-tuning of the morphology of nanostructured photocatalysts can reduce the migration distance of charge carriers. Improving the conductivity of photocatalysts by using graphitic materials can also improve the transport of charge carriers. Upon charge carrier migration, electrons and holes also tend to recombine. The suppression of recombination can be achieved by constructing heterojunctions that enhance charge separation in the photocatalysts. Surface states acting as recombination centers should also be removed to improve the photocatalytic efficiency. Moreover, surface reactions, which are the core chemical processes during the solar energy conversion, can be enhanced by applying cocatalysts as well as suppressing side reactions. All of these strategies have been proved to be essential for enhancing the activities of semiconductor photocatalysts. It is hoped that delicate manipulation of photogenerated charge carriers in semiconductor photocatalysts will hold the key to effective solar-to-chemical energy conversion. PMID:27075166

  5. Charge-carrier transport mechanisms in composites containing carbon-nanotube inclusions

    SciTech Connect

    Usanov, D. A. Skripal’, A. V.; Romanov, A. V.

    2015-12-15

    From the microwave-radiation transmittance and reflectance spectra, the temperature dependence of the complex permittivity of carbon nanotubes, subjected to high-temperature annealing, and composite materials produced on their basis is determined. The electron transport mechanisms in composites with inclusions of unannealed carbon nanotubes and nanotubes subjected to high-temperature annealing are determined. The influence of the annealing temperature on the parameters that are characteristic of these mechanisms and control the temperature dependence of the conductivity of multiwall carbon nanotubes is established.

  6. Mean carrier transport properties and charge collection dynamics of single-crystal, natural type IIa diamonds from ion-induced conductivity measurements

    SciTech Connect

    Han, S.S.

    1993-09-01

    Ion-induced conductivity has been used to investigate the detector characteristics of diamond detectors. Both integrated-charge, and time-resolved current measurements were performed to examine the mean carrier transport properties of diamond and the dynamics of charge collection under highly-localized and high-density excitation conditions. The integrated-charge measurements were conducted with a standard pulse-counting system with {sup 241}Am radioactivity as the excitation source for the detectors. The time-resolved current measurements were performed using a 70 GHz random sampling oscilloscope with the detectors incorporated into high-speed microstrip transmission lines and the excitation source for these measurements was an ion beam of either 5-MeV He{sup +} or 10-MeV Si{sup 3+}. The detectors used in both experiments can be described as metal-semiconductor-metal (MSM) devices where a volume of the detector material is sandwiched between two metal plates. A charge collection model was developed to interpret the integrated-charge measurements which enabled estimation of the energy required to produce an electron-hole pair ({epsilon}{sub di}) and the mean carrier transport properties in diamond, such as carrier mobility and lifetime, and the behavior of the electrical contacts to diamond.

  7. Localized charge carriers in graphene nanodevices

    NASA Astrophysics Data System (ADS)

    Bischoff, D.; Varlet, A.; Simonet, P.; Eich, M.; Overweg, H. C.; Ihn, T.; Ensslin, K.

    2015-09-01

    Graphene—two-dimensional carbon—is a material with unique mechanical, optical, chemical, and electronic properties. Its use in a wide range of applications was therefore suggested. From an electronic point of view, nanostructured graphene is of great interest due to the potential opening of a band gap, applications in quantum devices, and investigations of physical phenomena. Narrow graphene stripes called "nanoribbons" show clearly different electronical transport properties than micron-sized graphene devices. The conductivity is generally reduced and around the charge neutrality point, the conductance is nearly completely suppressed. While various mechanisms can lead to this observed suppression of conductance, disordered edges resulting in localized charge carriers are likely the main cause in a large number of experiments. Localized charge carriers manifest themselves in transport experiments by the appearance of Coulomb blockade diamonds. This review focuses on the mechanisms responsible for this charge localization, on interpreting the transport details, and on discussing the consequences for physics and applications. Effects such as multiple coupled sites of localized charge, cotunneling processes, and excited states are discussed. Also, different geometries of quantum devices are compared. Finally, an outlook is provided, where open questions are addressed.

  8. Charge-Carrier-Scattering Spectroscopy With BEEM

    NASA Technical Reports Server (NTRS)

    Hecht, Michael H.; Bell, Lloyd D.; Kaiser, William J.

    1992-01-01

    Ballistic-electron-emission microscopy (BEEM) constitutes basis of new spectroscopy of scattering of electrons and holes. Pointed tip electrode scans near surface of metal about 100 angstrom thick on semiconductor. Principle similar to scanning tunneling microscope, except metal acts as third electrode. Used to investigate transport phenomena, scattering phenomena, and creation of hot charge carriers in Au/Si and Au/GaAs metal/semiconductor microstructures.

  9. Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

    NASA Astrophysics Data System (ADS)

    Nichterwitz, Melanie; Caballero, Raquel; Kaufmann, Christian A.; Schock, Hans-Werner; Unold, Thomas

    2013-01-01

    Cross section electron-beam induced current (EBIC) and illumination-dependent current voltage (IV) measurements show that charge carrier transport in Cu(In,Ga)Se2 (CIGSe)/CdS/ZnO solar-cells is generation-dependent. We perform a detailed analysis of CIGSe solar cells with different CdS layer thicknesses and varying Ga-content in the absorber layer. In conjunction with numerical simulations, EBIC and IV data are used to develop a consistent model for charge and defect distributions with a focus on the heterojunction region. The best model to explain our experimental data is based on a p+ layer at the CIGSe/CdS interface leading to generation-dependent transport in EBIC at room temperature. Acceptor-type defect states at the CdS/ZnO interface cause a significant reduction of the photocurrent in the red-light illuminated IV characteristics at low temperatures (red kink effect). Shallow donor-type defect states at the p+ layer/CdS interface of some grains of the absorber layer are responsible for grain specific, i.e., spatially inhomogeneous, charge carrier transport observed in EBIC.

  10. Hopping Transport of Charge Carriers in LEDs Based on Multiple InGaN/GaN Quantum Wells

    NASA Astrophysics Data System (ADS)

    Prudaev, I. А.; Zubrilkina, Yu. L.; Baktybaev, А. А.; Romanov, I. S.

    2015-01-01

    The results of experimental studies of forward current-voltage characteristics of blue LEDs with an active region consisting of the multiple InGaN/GaN quantum wells are presented. A model explaining the limitation of the forward current at decreasing temperature is proposed. The model is based on the concept of current limited by the space charge and caused by hopping transport of electrons in the region of multiple quantum wells. It is shown that the most probable mechanism of charge accumulation is the electron capture by shallow traps. According to the results of different measurements, the activation energy of traps decreases with decreasing temperature, which is consistent with the concept of hopping conductance mechanism in materials with an exponential distribution of the defect state density in the band gap.

  11. Charge carriers in few-layer graphene films.

    PubMed

    Latil, Sylvain; Henrard, Luc

    2006-07-21

    The nature of the charge carriers in 2D few-layer graphites (FLGs) has been recently questioned by transport measurements [K. S. Novoselov, Science 306, 666 (2004)10.1126/science.1102896] and a strong ambipolar electric field effect has been revealed. Our density functional calculations demonstrate that the electronic band dispersion near the Fermi level, and consequently the nature of the charge carriers, is highly sensitive to the number of layers and the stacking geometry. We show that the experimentally observed ambipolar transport is only possible for an FLG with a Bernal-like stacking pattern, whereas simple-carrier or semiconducting behavior is predicted for other geometries. PMID:16907528

  12. Optimization of charge carrier transport balance for performance improvement of PDPP3T-based polymer solar cells prepared using a hot solution.

    PubMed

    Wang, Jian; Zhang, Fujun; Zhang, Miao; Wang, Wenbin; An, Qiaoshi; Li, Lingliang; Sun, Qianqian; Tang, Weihua; Zhang, Jian

    2015-04-21

    Polymer solar cells (PSCs), with poly(diketopyrrolopyrrole-terthiophene) (PDPP3T):[6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) as the active layers, were fabricated using solutions of different temperatures. The best power conversion efficiency (PCE) of the PSCs prepared using a hot solution was about 6.22%, which is better than 5.54% for PSCs prepared using cool (room temperature) solutions and 5.85% for PSCs prepared using cool solutions with a 1,8-diiodooctane (DIO) solvent additive. The underlying reasons for the improved PCE of the PSCs prepared using a hot solution could be attributed to the more dispersive donor and acceptor distribution in the active layer, resulting in a better bi-continuous interpenetrating network for exciton dissociation and charge carrier transport. An enhanced and more balanced charge carrier transport in the active layer is obtained for the PSCs prepared using a hot solution, which can be determined from the J-V curves of the related hole-only and electron-only devices. PMID:25777139

  13. Self-assembly and charge carrier transport of solution-processed conjugated polymer monolayers on dielectric surfaces with controlled sub-nanometer roughness.

    PubMed

    Li, Mengmeng; Hinkel, Felix; Müllen, Klaus; Pisula, Wojciech

    2016-04-28

    In recent years organic field-effect transistors have received extensive attention, however, it is still a great challenge to fabricate monolayer-based devices of conjugated polymers. In this study, one single layer of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) is directly dip-coated, and its self-assembly is precisely tuned from nanofibers to granular aggregates by controlling the dielectric roughness on a sub-nanometer scale. The charge carrier transport of the monolayer transistor exhibits a strong dependence on the dielectric roughness, which is attributed to the roughness-induced effects of higher densities of grain boundaries and charge trapping sites as well as surface scattering. These results mark a great advance in the bottom-up fabrication of organic electronics. PMID:27080325

  14. Self-assembly and charge carrier transport of solution-processed conjugated polymer monolayers on dielectric surfaces with controlled sub-nanometer roughness

    NASA Astrophysics Data System (ADS)

    Li, Mengmeng; Hinkel, Felix; Müllen, Klaus; Pisula, Wojciech

    2016-04-01

    In recent years organic field-effect transistors have received extensive attention, however, it is still a great challenge to fabricate monolayer-based devices of conjugated polymers. In this study, one single layer of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) is directly dip-coated, and its self-assembly is precisely tuned from nanofibers to granular aggregates by controlling the dielectric roughness on a sub-nanometer scale. The charge carrier transport of the monolayer transistor exhibits a strong dependence on the dielectric roughness, which is attributed to the roughness-induced effects of higher densities of grain boundaries and charge trapping sites as well as surface scattering. These results mark a great advance in the bottom-up fabrication of organic electronics.In recent years organic field-effect transistors have received extensive attention, however, it is still a great challenge to fabricate monolayer-based devices of conjugated polymers. In this study, one single layer of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) is directly dip-coated, and its self-assembly is precisely tuned from nanofibers to granular aggregates by controlling the dielectric roughness on a sub-nanometer scale. The charge carrier transport of the monolayer transistor exhibits a strong dependence on the dielectric roughness, which is attributed to the roughness-induced effects of higher densities of grain boundaries and charge trapping sites as well as surface scattering. These results mark a great advance in the bottom-up fabrication of organic electronics. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01082b

  15. Role of dopants in long-range charge carrier transport for p-type and n-type graphene transparent conducting thin films.

    PubMed

    Bult, Justin B; Crisp, Ryan; Perkins, Craig L; Blackburn, Jeffrey L

    2013-08-27

    Monolayer to few-layer graphene thin films have several attractive properties such as high transparency, exceptional electronic transport, mechanical durability, and environmental stability, which are required in transparent conducting electrodes (TCs). The successful incorporation of graphene TCs into demanding applications such as thin film photovoltaics requires a detailed understanding of the factors controlling long-range charge transport. In this study, we use spectroscopic and electrical transport measurements to provide a self-consistent understanding of the macroscopic (centimeter, many-grain scale) transport properties of chemically doped p-type and n-type graphene TCs. We demonstrate the first large-area n-type graphene TCs through the use of hydrazine or polyethyleneimine as dopants. The n-type graphene TCs utilizing PEI, either as the sole dopant or as an overcoat, have good stability in air compared to TCs only doped with hydrazine. We demonstrate a shift in Fermi energy of well over 1 V between the n- and p-type graphene TCs and a sheet resistance of ~50 ?/sq at 89% visible transmittance. The carrier density is increased by 2 orders of magnitude in heavily doped graphene TCs, while the mobility is reduced by a factor of ~7 due to charged impurity scattering. Temperature-dependent measurements demonstrate that the molecular dopants also help to suppress processes associated with carrier localization that may limit the potential of intrinsic graphene TCs. These results suggest that properly doped graphene TCs may be well-suited as anodes or cathodes for a variety of opto-electronic applications. PMID:23859709

  16. Dynamics of spin charge carriers in polyaniline

    NASA Astrophysics Data System (ADS)

    Krinichnyi, V. I.

    2014-06-01

    The review summarizes the results of the study of emeraldine forms of polyaniline by multifrequency (9.7-140 GHz, 3-cm and 2-mm) wavebands Electron Paramagnetic Resonance (EPR) spectroscopy combined with the spin label and probe, steady-state saturation of spin-packets, and saturation transfer methods. Spin excitations formed in emeraldine form of polyaniline govern structure, magnetic resonance, and electronic properties of the polymer. Conductivity in neutral or weakly doped samples is defined mainly by interchain charge tunneling in the frames of the Kivelson theory. As the doping level increases, this process is replaced by a charge thermal activation transport by molecular-lattice polarons. In heavily doped polyaniline, the dominating is the Mott charge hopping between well-conducting crystalline ravels embedded into amorphous polymer matrix. The main properties of polyaniline are described in the first part. The theoretical background of the magnetic, relaxation, and dynamics study of nonlinear spin carriers transferring a charge in polyaniline is briefly explicated in the second part. An original data obtained in the EPR study of the nature, relaxation, and dynamics of polarons as well as the mechanism of their transfer in polyaniline chemically modified by sulfuric, hydrochloric, camphorsulfonic, 2-acrylamido-2-methyl-1-propanesulfonic, and para-toluenesulfonic acids up to different doping levels are analyzed in the third part. Some examples of utilization of polyaniline in molecular electronics and spintronics are described.

  17. Electrical transport in a disordered medium: NMR measurement of diffusivity and electrical mobility of ionic charge carriers.

    PubMed

    Heil, S R; Holz, M

    1998-11-01

    Electrical transport in porous media plays an important role in many fields of pure and applied science. The basic microscopic processes of the charge transport have attracted considerable theoretical interest for a long time. However, on a microscopic level there was up to now no experimental access to this problem. In the present paper we demonstrate, by using a suited porous system, that two combined NMR methods can offer such a first experimental access. We apply common PFG NMR methods and the special electrophoretic NMR (ENMR) technique for the measurement of self-diffusion coefficient D+ and electric mobility u+ of a cation ((C4H9)+4) in a disordered gel-like medium (Sephadex LH-20) filled with electrolyte solution. We find a, qualitatively expected, observation time-dependence of D+, but for the first time such a time-dependence is also observed for u+, which means the detection of the phenomenon of "anomalous field assisted diffusion" or "anomalous mobility." For the measurement of the short-time behavior of the mobility a new pulse sequence is presented. The time-dependent mobilities were measured at three different external electrical fields E. From the long-time behavior of D+, u+, and DH2O three independent values for the tortuosity T of the porous system could be derived. We find equality of the tortuosities T(D+) and T(u+), which represents a first experimental proof of the validity of the Einstein relation (D+ approximately u+) in a disordered medium. Finally, we discuss advantages of the possible use of "anomalous field assisted diffusion" over the commonly used "anomalous diffusion" in morphology studies by dynamic imaging in porous media. PMID:9799669

  18. Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Polster, S.; Jank, M. P. M.; Frey, L.

    2016-01-01

    The correlation of defect content and film morphology with the charge-carrier transport in field-effect devices based on zinc oxide nanoparticles was investigated. Changes in the defect content and the morphology were realized by annealing and sintering of the nanoparticle thin films. Temperature-dependent electrical measurements reveal that the carrier transport is thermally activated for both the unsintered and sintered thin films. Reduced energetic barrier heights between the particles have been determined after sintering. Additionally, the energetic barrier heights between the particles can be reduced by increasing the drain-to-source voltage and the gate-to-source voltage. The changes in the barrier height are discussed with respect to information obtained by scanning electron microscopy and photoluminescence measurements. It is found that a reduction of surface states and a lower roughness at the interface between the particle layer and the gate dielectric lead to lower barrier heights. Both surface termination and layer morphology at the interface affect the barrier height and thus are the main criteria for mobility improvement and device optimization.

  19. Screening-induced carrier transport in silicene

    NASA Astrophysics Data System (ADS)

    Hu, Bo

    2015-06-01

    Based on the Boltzmann transport equation in the MRT approximation, we present a theory to investigate low-field carrier transport in dual-gated silicene FETs by taking into account screened charged impurity scattering, which is the most likely scattering mechanism limiting the conductivity. Static RPA dielectric screening is also included in the conductivity calculation to study temperature-dependent silicene transport. It is found that both calculated conductivity and band gap not only depend strongly on carrier sheet density, but also depend strongly on effective offset density. More importantly, screening-induced metal-insulator-transition phenomena in buckled silicene can be observed theoretically, which is similar to that obtained in monolayer graphene.

  20. Charge carrier mobility in hybrid halide perovskites

    PubMed Central

    Motta, Carlo; El-Mellouhi, Fedwa; Sanvito, Stefano

    2015-01-01

    The charge transport properties of hybrid halide perovskites are investigated with a combination of density functional theory including van der Waals interaction and the Boltzmann theory for diffusive transport in the relaxation time approximation. We find the mobility of electrons to be in the range 5–10 cm2V−1s−1 and that for holes within 1–5 cm2V−1s−1, where the variations depend on the crystal structure investigated and the level of doping. Such results, in good agreement with recent experiments, set the relaxation time to about 1 ps, which is the time-scale for the molecular rotation at room temperature. For the room temperature tetragonal phase we explore two possible orientations of the organic cations and find that the mobility has a significant asymmetry depending on the direction of the current with respect to the molecular axis. This is due mostly to the way the PbI3 octahedral symmetry is broken. Interestingly we find that substituting I with Cl has minor effects on the mobilities. Our analysis suggests that the carrier mobility is probably not a key factor in determining the high solar-harvesting efficiency of this class of materials. PMID:26235910

  1. Charge transport in guanine crystals

    NASA Astrophysics Data System (ADS)

    Ortmann, Frank; Hannewald, Karsten; Bechstedt, Friedhelm

    2008-03-01

    Charge-transport processes in organic molecular crystals exhibit similarities and differences to those in ?-conjugated polymers. For both types of condensed matter the polaronic effects are of high importance. These effects can cause a transition from bandlike transport to themally activated hopping. While the hopping regime is prevalent for DNA polymers, it is not clear if the same holds also for crystalline guanine or if band transport dominates. Also the influence of the temperature is rarely discussed in literature. In our approach to the problem of charge-carrier transport in these systems [1], we discuss the temperature dependence of the polaron bandwidth and the mobility in guanine crystals [2]. [1] K. Hannewald et al., Phys. Rev. B 69, 075211 (2004); 075212 (2004). [2] F. Ortmann et al., J. Phys. Chem. B (to be published).

  2. The Impact of the Dielectric/Semiconductor Interface on Microstructure and Charge Carrier Transport in High-Performance Polythiophene Transistors

    SciTech Connect

    Jung, Y.; Kline, R; Lin, E; Fischer, D; Toney, M; Heeney, M; McCulloch, I; DeLongchamp, D

    2008-01-01

    The performance of organic field-effect transistors (OFETs) significantly depends on the properties of the interface between the semiconductor and gate dielectric. Here, we study the impact of chemically modified and morphologically controlled dielectrics on the performance of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (pBTTT) semiconductors. We find that the molecular packing, domain size, and carrier mobility of pBTTT are highly sensitive to dielectric chemistry and dielectric roughness. The large and well-oriented terraced domains that are the origin of pBTTT's high performance can develop well on certain dielectrics, but can be disrupted on others.

  3. Evaluation of Intrinsic Charge Carrier Transport at Insulator-Semiconductor Interfaces Probed by a Non-Contact Microwave-Based Technique

    PubMed Central

    Honsho, Yoshihito; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori; Seki, Shu

    2013-01-01

    We have successfully designed the geometry of the microwave cavity and the thin metal electrode, achieving resonance of the microwave cavity with the metal-insulator-semiconductor (MIS) device structure. This very simple MIS device operates in the cavity, where charge carriers are injected quantitatively by an applied bias at the insulator-semiconductor interface. The local motion of the charge carriers was clearly probed through the applied external microwave field, also giving the quantitative responses to the injected charge carrier density and charge/discharge characteristics. By means of the present measurement system named field-induced time-resolved microwave conductivity (FI-TRMC), the pentacene thin film in the MIS device allowed the evaluation of the hole and electron mobility at the insulator-semiconductor interface of 6.3 and 0.34 cm2 V−1 s−1, respectively. This is the first report on the direct, intrinsic, non-contact measurement of charge carrier mobility at interfaces that has been fully experimentally verified. PMID:24212382

  4. Charge carrier coherence and Hall effect in organic semiconductors.

    PubMed

    Yi, H T; Gartstein, Y N; Podzorov, V

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  5. Charge carrier coherence and Hall effect in organic semiconductors

    PubMed Central

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  6. Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation

    SciTech Connect

    Puzanov, A. S. Obolenskii, S. V. Kozlov, V. A.

    2015-01-15

    The transport of electrons in heterobipolar transistors with radiation defects is studied under conditions where the characteristic sizes of defect clusters and the distances between them can be comparable or can even exceed the sizes of the device base. It is shown that, under some levels of irradiation, neutron radiation can bring about a decrease in the time of flight of hot electrons through the base, which retards the degradation of the transistor parameters.

  7. On the nature of photo charge carriers in ice

    NASA Astrophysics Data System (ADS)

    Petrenko, V. F.; Khusnatdinov, N. N.

    1994-06-01

    A method of photoelectromotive force (PEMF) was developed to find the charge sign, mobility, and lifetime of photo charge carriers in ice generated by photons with energy hν≳6.5 eV. It was determined that the most mobile photo charge carriers are negative ones, with mobility μ increasing from 2×10-3 cm2/V s at T=-10 °C to 4×10-2 cm2/V s at T=-30 °C, and with their lifetime decreasing from 30 to 10 s in the same temperature range. Activation energies of the mobility and the lifetime are Eμ=-0.77 eV and Eτ=0.32 eV, respectively. In addition to the negative photo charge carriers positive ones arise with mobility μ=2.3×10-4 cm2/V s and lifetime τ=26 min at T=-15 °C. We suggest that the negative photo charge carriers in ice are mobile complexes of an electron, vacancy and D-defect (e-+V+D). To take into account a specific mechanism of charge transport in ice, configurational vector Ω, and the generation of complexes (e-+V+D), a reaction of ``autoionization'' was modified for ice, 2H2O+hν→H3O++OH•int(e-+V+D).

  8. Solid state cloaking for electrical charge carrier mobility control

    DOEpatents

    Zebarjadi, Mona; Liao, Bolin; Esfarjani, Keivan; Chen, Gang

    2015-07-07

    An electrical mobility-controlled material includes a solid state host material having a controllable Fermi energy level and electrical charge carriers with a charge carrier mobility. At least one Fermi level energy at which a peak in charge carrier mobility is to occur is prespecified for the host material. A plurality of particles are distributed in the host material, with at least one particle disposed with an effective mass and a radius that minimize scattering of the electrical charge carriers for the at least one prespecified Fermi level energy of peak charge carrier mobility. The minimized scattering of electrical charge carriers produces the peak charge carrier mobility only at the at least one prespecified Fermi level energy, set by the particle effective mass and radius, the charge carrier mobility being less than the peak charge carrier mobility at Fermi level energies other than the at least one prespecified Fermi level energy.

  9. Degradation effects on charge carrier transport in P3HT:PCBM solar cells studied by Photo-CELIV and ToF

    NASA Astrophysics Data System (ADS)

    Stephen, M.; Karuthedath, S.; Sauermann, T.; Genevičius, K.; Juška, G.

    2014-10-01

    Oxygen induced degradation is one of the major problems in the field of organic photovoltaics. Photo-degradation impacts on performance of inverted bulk hetero junction poly(3-hexylthiophene) : phenyl-C61-butyric acid methyl ester (P3HT:PCBM) solar cells has been investigated by means of charge extraction by linearly increasing voltage (CELIV) and time of flight (ToF) methods. The irreversible loss in short circuit current (Jsc) can be attributed to a combination of adverse effects such as loss in mobility of the charge carrires, increase in trapping effect and sheilding of electric field by equilibrium carriers upon degradation.

  10. Transistors: Impact of Interfacial Microstructure on Charge Carrier Transport in Solution-Processed Conjugated Polymer Field-Effect Transistors (Adv. Mater. 11/2016).

    PubMed

    Li, Mengmeng; An, Cunbin; Marszalek, Tomasz; Baumgarten, Martin; Müllen, Klaus; Pisula, Wojciech

    2016-03-01

    The interfacial microstructure of a semicrystalline semiconductor polymer film is precisely modulated by the dielectric with surface roughness ranging from 0.15 to 0.39 nm, without affecting the morphology in the upper layers, as described by K. Müllen, W. Pisula, and co-workers. On page 2245, they demonstrate that the interfacial microstructure has only a minor impact on transistor performance because charge carriers can bypass the interfacial defects. PMID:26970067

  11. Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

    SciTech Connect

    Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori; Yokoyama, Masaaki; Seki, Shu

    2014-07-21

    The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{sup 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

  12. The impact of hot charge carrier mobility on photocurrent losses in polymer-based solar cells

    PubMed Central

    Philippa, Bronson; Stolterfoht, Martin; Burn, Paul L.; Juška, Gytis; Meredith, Paul; White, Ronald D.; Pivrikas, Almantas

    2014-01-01

    A typical signature of charge extraction in disordered organic systems is dispersive transport, which implies a distribution of charge carrier mobilities that negatively impact on device performance. Dispersive transport has been commonly understood to originate from a time-dependent mobility of hot charge carriers that reduces as excess energy is lost during relaxation in the density of states. In contrast, we show via photon energy, electric field and film thickness independence of carrier mobilities that the dispersive photocurrent in organic solar cells originates not from the loss of excess energy during hot carrier thermalization, but rather from the loss of carrier density to trap states during transport. Our results emphasize that further efforts should be directed to minimizing the density of trap states, rather than controlling energetic relaxation of hot carriers within the density of states. PMID:25047086

  13. Nanofaceting as a stamp for periodic graphene charge carrier modulations

    NASA Astrophysics Data System (ADS)

    Vondráček, M.; Kalita, D.; Kučera, M.; Fekete, L.; Kopeček, J.; Lančok, J.; Coraux, J.; Bouchiat, V.; Honolka, J.

    2016-04-01

    The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 1013 carriers per cm2 along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level.

  14. Nanofaceting as a stamp for periodic graphene charge carrier modulations.

    PubMed

    Vondráček, M; Kalita, D; Kučera, M; Fekete, L; Kopeček, J; Lančok, J; Coraux, J; Bouchiat, V; Honolka, J

    2016-01-01

    The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 10(13) carriers per cm(2) along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level. PMID:27040365

  15. Nanofaceting as a stamp for periodic graphene charge carrier modulations

    PubMed Central

    Vondráček, M.; Kalita, D.; Kučera, M.; Fekete, L.; Kopeček, J.; Lančok, J.; Coraux, J.; Bouchiat, V.; Honolka, J.

    2016-01-01

    The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 1013 carriers per cm2 along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level. PMID:27040365

  16. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOEpatents

    Rehak, Pavel; Gatti, Emilio

    1987-01-01

    A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

  17. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOEpatents

    Rehak, P.; Gatti, E.

    1984-02-24

    A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying functions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

  18. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOEpatents

    Rehak, P.; Gatti, E.

    1987-08-18

    A semiconductor charge transport device and method for making same are disclosed, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution. 16 figs.

  19. Organic (opto)electronic materials: understanding charge carrier dynamics

    NASA Astrophysics Data System (ADS)

    Ostroverkhova, Oksana

    2008-05-01

    There is growing interest in using organic (opto)electronic materials for applications in electronics and photonics. In particular, organic semiconductor thin films offer several advantages over traditional silicon technology, including low-cost processing, the potential for large-area flexible devices, high-efficiency light emission, and widely tunable properties through functionalization of the molecules. Over the past decade, remarkable progress in materials design and purification has been made, which led to applications of organic semiconductors in light-emitting diodes, polymer lasers, photovoltaic cells, high-speed photodetectors, organic thin-film transistors, and many others. Most of the applications envisioned for organic semiconductors rely on their conductive or photoconductive properties. However, despite remarkable progress in organic electronics and photonics, the nature of charge carrier photogeneration and transport in organic semiconductors is not completely understood and remains controversial, partly due to difficulties in assessing intrinsic properties that are often masked by impurities, grain boundaries, etc. Measurements of charge carrier dynamics at picosecond time scales after excitation reveal the intrinsic nature of mobile charge carriers before they are trapped at defect sites. In this presentation, I will review the current state of the field and summarize our recent results on photoconductivity of novel high-performance organic semiconductors (such as functionalized pentacene and anthradithiophene thin films) from picoseconds to seconds after photoexcitation. Photoluminescent properties of these novel materials will also be discussed.

  20. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of charge carriers is known to evolve as the carrier concentration increases, due to the presence of intrinsic disorder in organic semiconductors. Thus, a complementary question is: how does the nature of charge transport change as a function of carrier concentration?

  1. NREL Studies Carrier Separation and Transport in Perovskite Solar Cells

    SciTech Connect

    2016-01-01

    NREL scientists studied charge separation and transport in perovskite solar cells by determining the junction structure across the solar device using the nanoelectrical characterization technique of Kelvin probe force microscopy. The distribution of electrical potential across both planar and porous devices demonstrates a p-n junction structure at the interface between titanium dioxide and perovskite. In addition, minority-carrier transport within the devices operates under diffusion/drift. Clarifying the fundamental junction structure provides significant guidance for future research and development. This NREL study points to the fact that improving carrier mobility is a critical factor for continued efficiency gains in perovskite solar cells.

  2. Microscopic charge carrier lifetime in silicon from a transient approach

    NASA Astrophysics Data System (ADS)

    Heinz, Friedemann D.; Kasemann, Martin; Warta, Wilhelm; Schubert, Martin C.

    2015-09-01

    We present an experimental approach to determine the charge carrier lifetime in silicon based on the measured transient decay of the emitted photoluminescence intensity, requiring only a crystal volume of 50 μm in diameter. This becomes feasible by a combination of the time correlated single photon counting technique and confocal microscopy. Using combined pulsed and pulse train laser excitation, we obtain a self-consistent charge carrier lifetime in a high dynamic range from 100 ns to ms and an injection range from 1010 cm-3 to high injection densities. An iterative data evaluation routine incorporates all effects induced by the spatially non-homogeneous charge carrier generation.

  3. Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene

    SciTech Connect

    Ong, Zhun-Yong; Zhang, Gang; Zhang, Yong Wei

    2014-12-07

    The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged impurity-limited carrier mobility ? in bare and encapsulated monolayer phosphorene. We find a significant temperature dependence in the carrier mobilities (? ? T{sup ??}) that results from the temperature variability of the charge screening and varies with the crystal orientation. The anisotropy in the effective mass leads to an anisotropic carrier mobility, with the mobility in the armchair direction about one order of magnitude larger than in the zigzag direction. In particular, this mobility anisotropy is enhanced at low temperatures and high carrier densities. Under encapsulation with a high-? overlayer, the mobility increases by up to an order of magnitude although its temperature dependence and its anisotropy are reduced.

  4. 47 CFR 69.153 - Presubscribed interexchange carrier charge (PICC).

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... (PICC). 69.153 Section 69.153 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON... § 69.153 Presubscribed interexchange carrier charge (PICC). (a) A charge expressed in dollars and cents... maximum of $4.31 per line per month. In the event the ceilings on the PICC prevent the PICC...

  5. 47 CFR 69.153 - Presubscribed interexchange carrier charge (PICC).

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... (PICC). 69.153 Section 69.153 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON... § 69.153 Presubscribed interexchange carrier charge (PICC). (a) A charge expressed in dollars and cents... maximum of $4.31 per line per month. In the event the ceilings on the PICC prevent the PICC...

  6. 47 CFR 69.153 - Presubscribed interexchange carrier charge (PICC).

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... (PICC). 69.153 Section 69.153 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON... § 69.153 Presubscribed interexchange carrier charge (PICC). (a) A charge expressed in dollars and cents... maximum of $4.31 per line per month. In the event the ceilings on the PICC prevent the PICC...

  7. 47 CFR 69.153 - Presubscribed interexchange carrier charge (PICC).

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... (PICC). 69.153 Section 69.153 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON... § 69.153 Presubscribed interexchange carrier charge (PICC). (a) A charge expressed in dollars and cents... maximum of $4.31 per line per month. In the event the ceilings on the PICC prevent the PICC...

  8. 47 CFR 69.153 - Presubscribed interexchange carrier charge (PICC).

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... (PICC). 69.153 Section 69.153 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON... § 69.153 Presubscribed interexchange carrier charge (PICC). (a) A charge expressed in dollars and cents... maximum of $4.31 per line per month. In the event the ceilings on the PICC prevent the PICC...

  9. The solute carrier 6 family of transporters

    PubMed Central

    Bröer, Stefan; Gether, Ulrik

    2012-01-01

    The solute carrier 6 (SLC6) family of the human genome comprises transporters for neurotransmitters, amino acids, osmolytes and energy metabolites. Members of this family play critical roles in neurotransmission, cellular and whole body homeostasis. Malfunction or altered expression of these transporters is associated with a variety of diseases. Pharmacological inhibition of the neurotransmitter transporters in this family is an important strategy in the management of neurological and psychiatric disorders. This review provides an overview of the biochemical and pharmacological properties of the SLC6 family transporters. LINKED ARTICLES BJP published a themed section on Transporters in 2011. To view articles in this section visit http://onlinelibrary.wiley.com/doi/10.1111/bph.2011.164.issue-7/issuetoc PMID:22519513

  10. On the role of local charge carrier mobility in the charge separation mechanism of organic photovoltaics.

    PubMed

    Yoshikawa, Saya; Saeki, Akinori; Saito, Masahiko; Osaka, Itaru; Seki, Shu

    2015-07-21

    Although the charge separation (CS) and transport processes that compete with geminate and non-geminate recombination are commonly regarded as the governing factors of organic photovoltaic (OPV) efficiency, the details of the CS mechanism remain largely unexplored. Here we provide a systematic investigation on the role of local charge carrier mobility in bulk heterojunction films of ten different low-bandgap polymers and polythiophene analogues blended with methanofullerene (PCBM). By correlating with the OPV performances, we demonstrated that the local mobility of the blend measured by time-resolved microwave conductivity is more important for the OPV output than those of the pure polymers. Furthermore, the results revealed two separate trends for crystalline and semi-crystalline polymers. This work offers guidance in the design of high-performance organic solar cells. PMID:26084482

  11. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage...-TRANSPORTATION AND TEMPORARY STORAGE OF HOUSEHOLD GOODS AND PROFESSIONAL BOOKS, PAPERS, AND EQUIPMENT (PBP&E... actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? Charges...

  12. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage...-TRANSPORTATION AND TEMPORARY STORAGE OF HOUSEHOLD GOODS AND PROFESSIONAL BOOKS, PAPERS, AND EQUIPMENT (PBP&E... actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? Charges...

  13. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage...-TRANSPORTATION AND TEMPORARY STORAGE OF HOUSEHOLD GOODS AND PROFESSIONAL BOOKS, PAPERS, AND EQUIPMENT (PBP&E... actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? Charges...

  14. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage...-TRANSPORTATION AND TEMPORARY STORAGE OF HOUSEHOLD GOODS AND PROFESSIONAL BOOKS, PAPERS, AND EQUIPMENT (PBP&E... actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? Charges...

  15. Charge carrier concentration and mobility in alkali silicates

    NASA Astrophysics Data System (ADS)

    Souquet, Jean-Louis; Nascimento, Marcio Luis Ferreira; Rodrigues, Ana Candida Martins

    2010-01-01

    The respective contributions of the charge carrier concentration and mobility to the ionic conductivity in glasses remain an open question. In the present work we calculate these two parameters from conductivity data as a function of temperature below and above the glass transition temperature, Tg. The basic hypothesis assumes that ionic displacement results from the migration of cationic pairs formed by a partial dissociation, which is a temperature-activated process. Below Tg their migration would follow a temperature-activated mechanism, while a free volume mechanism prevails above this temperature, leading to a deviation from the Arrhenius behavior. Expressions are formulated for the variation in ionic conductivity as a function of temperature in the supercooled and glassy states. Fitting the experimental data with the proposed expressions allows for the determination of characteristic parameters such as the charge carrier formation and migration enthalpies. Based on these values, it is then possible to calculate the charge carrier concentration and mobility in the entire temperature range. At room temperature, the mobility of effective charge carriers is estimated close to 10-4 cm2 s-1 V-1 for alkali disilicates glasses under study, while the ratio between the number of effective charge carriers and the total number of alkali cations is estimated to be from 10-8 to 10-10, comparable to the concentration of intrinsic defects in an ionic crystal or dissociated species from a weak electrolyte solution.

  16. Charging up Transportation.

    ERIC Educational Resources Information Center

    Vail, Kathleen R.

    1994-01-01

    In Antelope Valley, California, a regional transportation consortium, cooperatively run by six adjacent school districts, is operating an electric-powered school bus as a pilot project. Although the prototype bus cost nearly six times more than a traditional school bus, lower operating and maintenance expenses and safety factors appeal to many…

  17. Electronic carrier transport at epitaxial oxide-semiconductor interfaces

    NASA Astrophysics Data System (ADS)

    Kornblum, Lior; Jin, Eric; Ahn, Charles; Walker, Fred

    2015-03-01

    The epitaxial growth of transition metal perovskite oxides on conventional semiconductors is a promising approach for integrating the wealth of electronic phenomena found in these oxides with existing devices and technologies. Some oxide functionalities require charge transport to and from the semiconductor, making the semiconductor-oxide interface an important focal point in the utilization of epitaxial oxides in electronic devices. We present our findings on electronic carrier transport in the conduction band of titanate perovskites (RTiO3) epitaxially grown on silicon and on germanium. Metal oxide semiconductor devices were fabricated by evaporation of metal contacts on top of epitaxially-grown oxides on semiconductors. Transport measurements show diode-like transport across the interface of some of the structures, whereas only leakage currents are observed in others. These results are discussed in light of the physical and electronic structure at the oxide-semiconductor interface.

  18. Carrier Transport in Disordered Multiple Quantum Wells.

    NASA Astrophysics Data System (ADS)

    Shivamoggi, Jayasree B.

    We present in this dissertation, a study of the cross-well transport of carriers in annealed Multiple Quantum Wells (MQW). The design of the devices using MQW structures depends critically on the amount of time required by the photogenerated carriers to influence the optical properties. It is therefore very important from the design considerations to understand the basic mechanisms that control the carrier escape from the intrinsic region of the reverse biased p-i-n junction structure with the MQW fabricated in the intrinsic region. Fine-tuning of the performance of these devices can be achieved through band gap engineering. This can be done by selectively intermixing the well and the barrier region. In this work, we have identified and explored the effect of finite barrier width, initial barrier concentration and annealing time on the barrier height. We have used a more general method, the Runge-Kutta method, to calculate the energy levels in annealed quantum wells. The results from this method are in good agreement with those from other existing numerical methods. The advantage comes from the fact that Runge-Kutta method is accurate when Quantum wells of arbitrary shapes are used. We have also defined the superlattice limits and the essential difference between energy levels in the as-grown wells and the annealed quantum wells. We have presented a new formulation of the thermionic emission taking into account the effect of valence band mixing and 2D density of states in the calculation of the rate of carrier escape due to emission. We have also considered resonant non-resonant and thermally assisted tunneling time constants. We have used these time constants in the solution of the system of differential equations which represent the rate equations for the carrier escape from the intrinsic region. While no such experimental data is yet available for comparison, we have seen a qualitative agreement with existing measurements.

  19. Assessing charge carrier trapping in silicon nanowires using picosecond conductivity measurements.

    PubMed

    Ulbricht, Ronald; Kurstjens, Rufi; Bonn, Mischa

    2012-07-11

    Free-standing semiconductor nanowires on bulk substrates are increasingly being explored as building blocks for novel optoelectronic devices such as tandem solar cells. Although carrier transport properties, such as mobility and trap densities, are essential for such applications, it has remained challenging to quantify these properties. Here, we report on a method that permits the direct, contact-free quantification of nanowire carrier diffusivity and trap densities in thin (∼25 nm wide) silicon nanowires-without any additional processing steps such as transfer of wires onto a substrate. The approach relies on the very different terahertz (THz) conductivity response of photoinjected carriers within the silicon nanowires from those in the silicon substrate. This allows quantifying both the picosecond dynamics and the efficiency of charge carrier transport from the silicon nanowires into the silicon substrate. Varying the excitation density allows for quantification of nanowire trap densities: for sufficiently low excitation fluences the diffusion process stalls because the majority of charge carriers become trapped at nanowire surface defects. Using a model that includes these effects, we determine both the diffusion constant and the nanowire trap density. The trap density is found to be orders of magnitude larger than the charge carrier density that would be generated by AM1.5 sunlight. PMID:22738182

  20. Charge transport along proton wires.

    PubMed

    Karahka, Markus Leopold; Kreuzer, Hans Jürgen

    2013-12-01

    Using density functional theory we look at the quantum mechanics of charge transport along water wires both with free ends and donor/acceptor terminated. With the intermediate geometries in the DFT iterations we can follow the charge transfer mechanism and also construct the energy landscape explicitly. It shows activation barriers when a proton is transferred from one water molecule to the next. This, together with snapshots of intermediate geometries, leads to a justification and further elucidation of the Grotthuss mechanism and the Bjerrum effect. The charge transfer times and the conductivity of the proton wire are obtained in agreement with experimental results. PMID:24706126

  1. Comprehensive approach to intrinsic charge carrier mobility in conjugated organic molecules, macromolecules, and supramolecular architectures.

    PubMed

    Saeki, Akinori; Koizumi, Yoshiko; Aida, Takuzo; Seki, Shu

    2012-08-21

    Si-based inorganic electronics have long dominated the semiconductor industry. However, in recent years conjugated polymers have attracted increasing attention because such systems are flexible and offer the potential for low-cost, large-area production via roll-to-roll processing. The state-of-the-art organic conjugated molecular crystals can exhibit charge carrier mobilities (μ) that nearly match or even exceed that of amorphous silicon (1-10 cm(2) V(-1) s(-1)). The mean free path of the charge carriers estimated from these mobilities corresponds to the typical intersite (intermolecular) hopping distances in conjugated organic materials, which strongly suggests that the conduction model for the electronic band structure only applies to μ > 1 cm(2) V(-1) s(-1) for the translational motion of the charge carriers. However, to analyze the transport mechanism in organic electronics, researchers conventionally use a disorder formalism, where μ is usually less than 1 cm(2) V(-1) s(-1) and dominated by impurities, disorders, or defects that disturb the long-range translational motion. In this Account, we discuss the relationship between the alternating-current and direct-current mobilities of charge carriers, using time-resolved microwave conductivity (TRMC) and other techniques including field-effect transistor, time-of-flight, and space-charge limited current. TRMC measures the nanometer-scale mobility of charge carriers under an oscillating microwave electric field with no contact between the semiconductors and the metals. This separation allows us to evaluate the intrinsic charge carrier mobility with minimal trapping effects. We review a wide variety of organic electronics in terms of their charge carrier mobilities, and we describe recent studies of macromolecules, molecular crystals, and supramolecular architecture. For example, a rigid poly(phenylene-co-ethynylene) included in permethylated cyclodextrin shows a high intramolecular hole mobility of 0.5 cm(2) V(-1) s(-1), based on a combination of flash-photolysis TRMC and transient absorption spectroscopy (TAS) measurements. Single-crystal rubrene showed an ambipolarity with anisotropic charge carrier transport along each crystal axis on the nanometer scale. Finally, we describe the charge carrier mobility of a self-assembled nanotube consisting of a large π-plane of hexabenzocoronene (HBC) partially appended with an electron acceptor. The local (intratubular) charge carrier mobility reached 3 cm(2) V(-1) s(-1) for the nanotubes that possessed well-ordered π-stacking, but it dropped to 0.7 cm(2) V(-1) s(-1) in regions that contained greater amounts of the electron acceptor because those molecules reduced the structural integrity of π-stacked HBC arrays. Interestingly, the long-range (intertubular) charge carrier mobility was on the order of 10(-4) cm(2) V(-1) s(-1) and monotonically decreased when the acceptor content was increased. These results suggest the importance of investigating charge carrier mobilities by frequency-dependent charge carrier motion for the development of more efficient organic electronic devices. PMID:22676381

  2. Charge transport through inhomogeneous polymeric materials

    NASA Astrophysics Data System (ADS)

    Vakhshouri, Kiarash

    The generation of unique properties through mixing of organic semiconductors has enabled improved performance and novel functionalities in organic electronic devices. In organic light emitting diodes (OLEDs), isolated phases of a second material within the photoactive layer can act as recombination centers, enhancing the overall device performance. Mixing of flexible polymer semiconductors with high-mobility small organic molecules can yield high-performance flexible thin film transistors. Solution-processed, bulk-heterojunction (BHJ), thin-film organic solar cells rely on the self-assembly of polymer/fullerene donor/acceptor mixtures to create the necessary morphology with a high interfacial area for efficient photocurrent generation. Efficient conversion of absorbed photons into photocurrent requires sufficiently intimate mixing of the donor and acceptor phases such that photogenerated excitons can easily find an interface, as well as a sufficiently large thermodynamic driving force for charge separation at the interface. At the same time, efficient transport of separated charges towards the electrodes requires a certain degree of phase segregation between the two materials, to enable ordered molecular packing within each phase and also minimize interfacial recombination. Despite the importance of creating inhomogeneous mixtures of organic semiconductors and the tremendous recent advances in the performance of the aforementioned devices, it remains a challenge to fully describe the optoelectronic properties of organic semiconductor mixtures and understand the effects of structural and morphological parameters on charge transport. Recently, it has been shown that highly regioregular poly(3-hexylthiophene) (RR-P3HT) and poly[2,5-bis(3-hexadecylthiophen-2-yl)thieno(3,2-b)thiophene] (PBTTT) are promising materials for organic electronic applications due to the relatively high charge carrier mobility, high solubility in different organic solvents and acceptable film-forming properties. Charge carrier mobility in polymer semiconductors depends critically on crystallinity of the ordered regions, orientation of the conjugated lamellae, pi-pi stacking, and also connectivity between ordered regions. By varying the thermal annealing parameters and casting solvents, we have systematically studied charge transport within poly(3-hexylthiophene) (P3HT) and poly[2,5- bis(3-hexadecylthiophen-2-yl)thieno(3,2-b)thiophene] (PBTTT) thin films as a function of the crystallinity and found that there is not a universal relationship between crystallinity and mobility. Using an aggregate model for absorption spectra of P3HT thin films suggests that the conjugation length for P3HT thin films modulates charge mobility. Higher boiling point solvents result in higher conjugation length and consequently higher mobility. Our polarized soft X-ray scattering (P-SoXS) studies revealed anisotropic scattering profiles for P3HT thin films with higher charge mobility suggesting that longer intracrystalline order leads to higher mobilities in P3HT thin films. This is remarkable since anisotropic scattering has not been reported for thin films spun cast from a single component. In the case of PBTTT thin films, our P-SoXS studies confirm that higher orientational correlation lengths leads to higher charge carrier mobilities, but more importantly, through measuring thin-film modulus by buckling phenomena we could correlate mechanical properties and orientational correlation length (OCL) with PBTTT charge mobilities. Our results reveal that interconnectivity among crystallites modulates the charge mobility for PBTTT thin films and higher number of tie chains leads to higher OCL and consequently higher mobility. We also found that the charge mobility depends on the crystallization kinetics; rapid crystallization can affect the microstructure of polythiophenes by increasing the density of tie molecules. As a consequence, there are more pathways connecting ordered regions which results in higher charge carrier mobilities. Our results suggest that controlling the crystallization kinetics might be an important factor for maximizing the charge mobility in semicrystalline polythiophene thin films. In addition to single component semicrystalline thin films, blends of solution-processable organic molecules and conjugated polymers are of interest due to their potential use in low-cost, light-weight, scalable and flexible photovoltaic devices. One challenge lies in that, once mixed, self-assembly often does not lead to the formation of pure phases. We showed that RR P3HT/phenyl-C 61-butyric acid methyl ester (PCBM) mixtures separate into two phases due to the crystallization of the polymer. The P3HT rich phase, composed of P3HT crystals, is essentially pure. The PCBM-rich phase, however, is a mixture of amorphous P3HT with PCBM. The role of mixing within nanophases, however, on charge transport of organic semiconductor mixtures is not fully understood. We have examined the electron mobility in amorphous blends of P3HT and PCBM. Our studies revealed that the electron mobility is correlated with the miscibility of amorphous polythiophene/fullerene blends, which is determined by measuring the Flory-Huggins interaction parameter. Immiscibility promotes efficient electron transport by promoting percolating pathways within organic semiconductor mixtures. In fact, our results suggest that donor/acceptor mixtures which are completely miscible would exhibit sharp drop offs in charge transport efficacy with dilution. Strongly immiscible systems, on the other hand, would readily phase separate into large domains and prevent efficient charge separation. Consequently, partial miscibility of donor/acceptor mixtures is critical for efficient device performance. Our findings regarding charge transport in the fullerene-rich phase of polythiophene-fullerene solar cells can also be extended to any semicrystalline polymer-fullerene mixture.

  3. Combined Charge Carrier Transport and Photoelectrochemical Characterization of BiVO4 Single Crystals: Intrinsic Behavior of a Complex Metal Oxide

    SciTech Connect

    Rettie, Alexander J.; Lee, Heung Chan; Marshall, Luke G.; Lin, Jung-Fu; Capen, Cigdem; Lindemuth, Jeffrey; McCloy, John S.; Zhou, Jianshi; Bard, Allen J.; Mullins, C. Buddie

    2013-07-08

    ABSTRACT: Bismuth vanadate (BiVO4) is a promising photoelectrode material for the oxidation of water, but fundamental studies of this material are lacking. To address this, we report electrical and photoelectrochemical (PEC) properties of BiVO4 single crystals (undoped, 0.6% Mo and 0.3% W:BiVO4) grown using the floating zone technique. We demonstrate that a small polaron hopping conduction mechanism dominates from 250-400 K, transitioning to a variable range hopping mechanism at lower temperatures. An anisotropy ratio of ~3 was observed along the c-axis, attributed to the layered structure of BiVO4. Measurements of the AC field Hall effect yielded an electron mobility of ~0.2 cm2 V-1 s-1 for Mo and W:BiVO4 at 300 K. By application of the Gärtner model, a hole diffusion length of ~140 nm was estimated. As a result of low carrier mobility, attempts to measure the DC Hall effect were unsuccessful. Analyses of the Raman spectra showed that Mo and W substituted for V and acted as donor impurities. Mott-Schottky analysis of electrodes with the (001) face exposed yielded a flat band potential of 0.03-0.08 V vs. RHE, while incident photon conversion efficiency tests showed that the dark coloration of the doped single crystals did not result in additional photocurrent. Comparison of these intrinsic properties to other metal oxides for PEC applications gives valuable insight into this material as a photoanode.

  4. Combined charge carrier transport and photoelectrochemical characterization of BiVO4 single crystals: intrinsic behavior of a complex metal oxide.

    PubMed

    Rettie, Alexander J E; Lee, Heung Chan; Marshall, Luke G; Lin, Jung-Fu; Capan, Cigdem; Lindemuth, Jeffrey; McCloy, John S; Zhou, Jianshi; Bard, Allen J; Mullins, C Buddie

    2013-07-31

    Bismuth vanadate (BiVO4) is a promising photoelectrode material for the oxidation of water, but fundamental studies of this material are lacking. To address this, we report electrical and photoelectrochemical (PEC) properties of BiVO4 single crystals (undoped, 0.6% Mo, and 0.3% W:BiVO4) grown using the floating zone technique. We demonstrate that a small polaron hopping conduction mechanism dominates from 250 to 400 K, undergoing a transition to a variable-range hopping mechanism at lower temperatures. An anisotropy ratio of ~3 was observed along the c axis, attributed to the layered structure of BiVO4. Measurements of the ac field Hall effect yielded an electron mobility of ~0.2 cm(2) V(-1) s(-1) for Mo and W:BiVO4 at 300 K. By application of the Gärtner model, a hole diffusion length of ~100 nm was estimated. As a result of low carrier mobility, attempts to measure the dc Hall effect were unsuccessful. Analyses of the Raman spectra showed that Mo and W substituted for V and acted as donor impurities. Mott-Schottky analysis of electrodes with the (001) face exposed yielded a flat band potential of 0.03-0.08 V versus the reversible H2 electrode, while incident photon conversion efficiency tests showed that the dark coloration of the doped single crystals did not result in additional photocurrent. Comparison of these intrinsic properties to those of other metal oxides for PEC applications gives valuable insight into this material as a photoanode. PMID:23869474

  5. Charge Transport in Synthetic Metals

    SciTech Connect

    Emery, V. J.; Kivelson, S. A.; Muthukumar, V. N.

    1999-01-15

    The phenomenology of charge transport in synthetic metals is reviewed. It is argued that the conventional quasiparticle picture and Boltzmann transport theory do not apply to these materials. The central ideas of Fermi liquid theory are reviewed, and the significant corrections produced by quasiparticle scattering from ferromagnetic spin fluctuations in liquid {sup 3}He are described. It is shown that Sr{sub 2}RuO{sub 4} does not display the symptoms of a nearly-ferromagnetic Fermi liquid, so the source of its odd angular momentum pairing remains to be understood. The solution of an assisted-tunneling model of charge transport in quasi-one dimensional materials is described. This model has a quantum critical point and gives a resistivity that is linear in temperature or frequency, whichever is greater.

  6. Measurement of the Charge Carrier Mobility in MEH-PPV and MEH-PPV-POSS Organic Semiconductor Films

    NASA Astrophysics Data System (ADS)

    Romanov, I. V.; Voitsekhovskii, A. V.; Dyagterenko, K. M.; Kopylova, T. N.; Kokhanenko, A. P.; Nikonova, E. N.

    2015-03-01

    The values of the charge carrier mobility in organic semiconductor materials (MEH-PPV, MEH-PPV-POSS) are obtained on the basis of an analysis of the relaxation curves of transient electroluminescence in organic light-emitting diodes (OLEDs). The data on the mobility of charge carriers are analyzed according to the Poole-Frenkel model using the dependences of the charge carrier mobility on the electric field. Physical interpretation of the transport phenomena in OLED structures based on MEH-PPV and MEH-PPV-POSS is given.

  7. Charge transport in disordered semiconducting polymers driven by nuclear tunneling

    NASA Astrophysics Data System (ADS)

    van der Kaap, N. J.; Katsouras, I.; Asadi, K.; Blom, P. W. M.; Koster, L. J. A.; de Leeuw, D. M.

    2016-04-01

    The current density-voltage (J -V ) characteristics of hole-only diodes based on poly(2-methoxy, 5-(2' ethyl-hexyloxy)-p -phenylene vinylene) (MEH-PPV) were measured at a wide temperature and field range. At high electric fields the temperature dependence of the transport vanishes, and all J -V sweeps converge to a power law. Nuclear tunneling theory predicts a power law at high fields that scales with the Kondo parameter. To model the J -V characteristics we have performed master-equation calculations to determine the dependence of charge carrier mobility on electric field, charge carrier density, temperature, and Kondo parameter, using nuclear tunneling transfer rates. We demonstrate that nuclear tunneling, unlike other semiclassical models, provides a consistent description of the charge transport for a large bias, temperature, and carrier density range.

  8. High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films

    PubMed Central

    Sandeep, C. S. Suchand; Cate, Sybren ten; Schins, Juleon M.; Savenije, Tom J.; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J.; Siebbeles, Laurens D. A.

    2013-01-01

    Carrier multiplication, the generation of multiple electron–hole pairs by a single photon, is of great interest for solar cells as it may enhance their photocurrent. This process has been shown to occur efficiently in colloidal quantum dots, however, harvesting of the generated multiple charges has proved difficult. Here we show that by tuning the charge-carrier mobility in quantum-dot films, carrier multiplication can be optimized and may show an efficiency as high as in colloidal dispersion. Our results are explained quantitatively by the competition between dissociation of multiple electron–hole pairs and Auger recombination. Above a mobility of ~1 cm2 V−1 s−1, all charges escape Auger recombination and are quantitatively converted to free charges, offering the prospect of cheap quantum-dot solar cells with efficiencies in excess of the Shockley–Queisser limit. In addition, we show that the threshold energy for carrier multiplication is reduced to twice the band gap of the quantum dots. PMID:23974282

  9. 47 CFR 36.381 - Carrier access charge billing and collecting expense.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 2 2010-10-01 2010-10-01 false Carrier access charge billing and collecting... Operating Expenses and Taxes Customer Operations Expenses § 36.381 Carrier access charge billing and... billing and collecting of access charges to interexchange carriers. (b) Of access charges other than...

  10. Identification of the Charge Carriers in Cerium Phosphate Ceramics

    SciTech Connect

    Ray, Hannah L.; Jonghe, Lutgard C. De

    2010-06-02

    The total conductivity of Sr-doped cerium orthophosphate changes by nearly two orders of magnitude depending on the oxygen and hydrogen content of the atmosphere. The defect model for the system suggests that this is because the identity of the dominant charge carrier can change from electron holes to protons when the sample is in equilibrium with air vs. humidified hydrogen. In this work are presented some preliminary measurements that can help to clarify this exchange between carriers. The conduction behavior of a 2percent Sr-doped CePO4 sample under symmetric atmospheric conditions is investigated using several techniques, including AC impedance, H/D isotope effects, and chronoamperometry.

  11. Decoupling Charge Transfer and Transport at Polymeric Hole Transport Layer in Perovskite Solar Cells.

    PubMed

    Sin, Dong Hun; Ko, Hyomin; Jo, Sae Byeok; Kim, Min; Bae, Geun Yeol; Cho, Kilwon

    2016-03-16

    Tailoring charge extraction interfaces in perovskite solar cells (PeSCs) critically determines the photovoltaic performance of PeSCs. Here, we investigated the decoupling of two major determinants of the efficient charge extraction, the charge transport and interfacial charge transfer properties at hole transport layers (HTLs). A simple physical tuning of a representative polymeric HTL, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), provided a wide range of charge conductivities from 10(-4) to 10(3) S cm(-1) without significant modulations in their energy levels, thereby enabling the decoupling of charge transport and transfer properties at HTLs. The transient photovoltaic response measurement revealed that the facilitation of hole transport through the highly conductive HTL promoted the elongation of charge carrier lifetimes within the PeSCs up to 3 times, leading to enhanced photocurrent extraction and finally 25% higher power conversion efficiency. PMID:26887635

  12. Charge carrier recombination dynamics in perovskite and polymer solar cells

    NASA Astrophysics Data System (ADS)

    Paulke, Andreas; Stranks, Samuel D.; Kniepert, Juliane; Kurpiers, Jona; Wolff, Christian M.; Schön, Natalie; Snaith, Henry J.; Brenner, Thomas J. K.; Neher, Dieter

    2016-03-01

    Time-delayed collection field experiments are applied to planar organometal halide perovskite (CH3NH3PbI3) based solar cells to investigate charge carrier recombination in a fully working solar cell at the nanosecond to microsecond time scale. Recombination of mobile (extractable) charges is shown to follow second-order recombination dynamics for all fluences and time scales tested. Most importantly, the bimolecular recombination coefficient is found to be time-dependent, with an initial value of ca. 10-9 cm3/s and a progressive reduction within the first tens of nanoseconds. Comparison to the prototypical organic bulk heterojunction device PTB7:PC71BM yields important differences with regard to the mechanism and time scale of free carrier recombination.

  13. Spontaneous Charge Carrier Localization in Extended One-Dimensional Systems

    NASA Astrophysics Data System (ADS)

    Vlček, Vojtěch; Eisenberg, Helen R.; Steinle-Neumann, Gerd; Neuhauser, Daniel; Rabani, Eran; Baer, Roi

    2016-05-01

    Charge carrier localization in extended atomic systems has been described previously as being driven by disorder, point defects, or distortions of the ionic lattice. Here we show for the first time by means of first-principles computations that charge carriers can spontaneously localize due to a purely electronic effect in otherwise perfectly ordered structures. Optimally tuned range-separated density functional theory and many-body perturbation calculations within the G W approximation reveal that in trans-polyacetylene and polythiophene the hole density localizes on a length scale of several nanometers. This is due to exchange-induced translational symmetry breaking of the charge density. Ionization potentials, optical absorption peaks, excitonic binding energies, and the optimally tuned range parameter itself all become independent of polymer length as it exceeds the critical localization length. Moreover, we find that lattice disorder and the formation of a polaron result from the charge localization in contrast to the traditional view that lattice distortions precede charge localization. Our results can explain experimental findings that polarons in conjugated polymers form instantaneously after exposure to ultrafast light pulses.

  14. Flexible cobalt-phthalocyanine thin films with high charge carrier mobility

    SciTech Connect

    Singh, Ajay; Kumar, Arvind; Kumar, Ashwini; Samanta, Soumen; Debnath, Anil K.; Jha, Purushottam; Prasad, Rajeshwar; Aswal, Dinesh K.; Gupta, Shiv K.; Salmi, Zakaria; Nowak, Sophie; Chehimi, Mohamed M.

    2012-11-26

    The structural and charge transport characteristics of cobalt phthalocyanine (CoPc) films deposited on flexible bi-axially oriented polyethylene terephthalate (BOPET) substrates are investigated. CoPc films exhibited a preferential (200) orientation with charge carrier mobility of {approx}118 cm{sup 2} V{sup -1} s{sup -1} (at 300 K). These films exhibited a reversible resistance changes upon bending them to different radius of curvature. The charge transport in CoPc films is governed by a bias dependent crossover from ohmic (J-V) to trap-free space-charge limited conduction (J-V{sup 2}). These results demonstrate that CoPc films on flexible BOPET having high mobility and high mechanical flexibility are a potential candidate for flexible electronic devices.

  15. Flexible cobalt-phthalocyanine thin films with high charge carrier mobility

    NASA Astrophysics Data System (ADS)

    Singh, Ajay; Kumar, Arvind; Kumar, Ashwini; Samanta, Soumen; Debnath, Anil K.; Jha, Purushottam; Prasad, Rajeshwar; Salmi, Zakaria; Nowak, Sophie; Chehimi, Mohamed M.; Aswal, Dinesh K.; Gupta, Shiv K.

    2012-11-01

    The structural and charge transport characteristics of cobalt phthalocyanine (CoPc) films deposited on flexible bi-axially oriented polyethylene terephthalate (BOPET) substrates are investigated. CoPc films exhibited a preferential (200) orientation with charge carrier mobility of ˜118 cm2 V-1 s-1 (at 300 K). These films exhibited a reversible resistance changes upon bending them to different radius of curvature. The charge transport in CoPc films is governed by a bias dependent crossover from ohmic (J-V) to trap-free space-charge limited conduction (J-V2). These results demonstrate that CoPc films on flexible BOPET having high mobility and high mechanical flexibility are a potential candidate for flexible electronic devices.

  16. Applications of acoustic charge transport.

    PubMed

    Vigil, A J; Hull, A W; Solie, L P; Miller, M J; Kansy, R J; Fleisch, D A

    1993-01-01

    The emerging technology of acoustic charge transport (ACT), which has enabled the implementation of powerful signal processors capable of handling high-speed RF and microwave signals in their natural analog domain, is reviewed. The development of ACT technology has led to the implementation of fully programmable analog signal processors capable of performing over 45 billion multiply-and-accumulate operations per second. These processors are finding application as adaptive filters and equalizers in a variety of commercial and military systems. The operation and performance capabilities of the ACT device are described, and seven applications now under development are discussed. PMID:18263211

  17. Charge Transport in Silicon Nanomembranes

    NASA Astrophysics Data System (ADS)

    Lagally, Max G.

    2010-03-01

    Charge transport in very thin semiconductor sheets, ribbons, or nanowires is dominated by surface and interface effects as a consequence of the absence of an extended bulk. In silicon, a model system for exploring these effects, factors can include interface states and fixed oxide charges if the Si nanomembrane is oxidized, surface states in chemically modified surfaces, reconstruction if the surface is clean, or a combination of these factors if the surfaces are not equivalent (e.g., one oxidized, the other clean). Additionally, in membranes or wires thin enough that quantum size effects are observable, surface roughness may influence conduction. For conventionally doped Si, effects become noticeable at nanomembrane thicknesses below ˜200 nm (depending on doping). We describe experiments on a platform based on (001) oriented silicon-on-insulator (SOI), using van der Pauw, Hall effect, and I-V measurements, along with scanning tunneling microscopy and diffraction, and theoretical analysis of several situations that shed light on the interplay of these factors. Measurements are compared on oxidixed membranes, clean and chemically modified surfaces on membranes, and attached and freestanding nanowires with well-defined surfaces, patterned from SOI. Most importantly, large changes in conductivity are possible with small changes in surface condition, making nanomembranes (well defined in surface orientation, thickness, and surface quality) an ideal vehicle for establishing a framework for understanding charge transport in nanostructured semiconductors. With W. Peng, S. Scott, F. Chen, J. Endres, I, Knezevic, D. Savage, M. Eriksson, C.-H. Lee, C. Ritz, M.-H. Huang, M. Ziwisky, and R. Blise [4pt] [1] P.P. Zhang et al., Nature 439 703 2006 [0pt] [2] S. Scott et al., ACS Nano 3 1683 2009 [0pt] [3] C-H. Lee et al., submitted

  18. Correlated charge carrier-like photoresponse of polymer nanowires.

    PubMed

    Rahman, Atikur; Sanyal, Milan K

    2013-09-24

    Size confinement at nanometer length scales gives rise to many new and tunable properties of organic materials that are absent in their bulk state. Here we report, the appearance of large photoconduction property of a conducting polymer when it forms nanowires. The photoresponse and the external photoconductive gain were found to be >10(5) % and >200%, respectively, even at low bias (<1 V) voltage. These nanowires show a resistance switching transition at low temperature above a threshold bias, and below this transition, the resistance changes by more than 3 orders of magnitude under illumination of light. The photoresponse increases superlinearly and the resistance switching threshold voltage decreases with increasing illumination intensity. These properties are absent in the bulk polymer, and the observed photoresponse is not bolometric or excitonic in nature, nor it can be explained by free carrier generation or Schöttky barrier modulation, rather it is consistent with the photoexcitation of correlated charge carriers. PMID:23952915

  19. Scaling Properties of Charge Transport in Polycrystalline Graphene

    PubMed Central

    2013-01-01

    Polycrystalline graphene is a patchwork of coalescing graphene grains of varying lattice orientations and size, resulting from the chemical vapor deposition (CVD) growth at random nucleation sites on metallic substrates. The morphology of grain boundaries has become an important topic given its fundamental role in limiting the mobility of charge carriers in polycrystalline graphene, as compared to mechanically exfoliated samples. Here we report new insights to the current understanding of charge transport in polycrystalline geometries. We created realistic models of large CVD-grown graphene samples and then computed the corresponding charge carrier mobilities as a function of the average grain size and the coalescence quality between the grains. Our results reveal a remarkably simple scaling law for the mean free path and conductivity, correlated to atomic-scale charge density fluctuations along grain boundaries. PMID:23448361

  20. Niosomal carriers enhance oral bioavailability of carvedilol: effects of bile salt-enriched vesicles and carrier surface charge

    PubMed Central

    Arzani, Gelareh; Haeri, Azadeh; Daeihamed, Marjan; Bakhtiari-Kaboutaraki, Hamid; Dadashzadeh, Simin

    2015-01-01

    Carvedilol (CRV) is an antihypertensive drug with both alpha and beta receptor blocking activity used to preclude angina and cardiac arrhythmias. To overcome the low, variable oral bioavailability of CRV, niosomal formulations were prepared and characterized: plain niosomes (without bile salts), bile salt-enriched niosomes (bilosomes containing various percentages of sodium cholate or sodium taurocholate), and charged niosomes (negative, containing dicetyl phosphate and positive, containing hexadecyl trimethyl ammonium bromide). All formulations were characterized in terms of encapsulation efficiency, size, zeta potential, release profile, stability, and morphology. Various formulations were administered orally to ten groups of Wistar rats (n=6 per group). The plasma levels of CRV were measured by a validated high-performance liquid chromatography (HPLC) method and pharmacokinetic properties of different formulations were characterized. Contribution of lymphatic transport to the oral bioavailability of niosomes was also investigated using a chylomicron flow-blocking approach. Of the bile salt-enriched vesicles examined, bilosomes containing 20% sodium cholate (F2) and 30% sodium taurocholate (F5) appeared to give the greatest enhancement of intestinal absorption. The relative bioavailability of F2 and F5 formulations to the suspension was estimated to be 1.84 and 1.64, respectively. With regard to charged niosomes, the peak plasma concentrations (Cmax) of CRV for positively (F7) and negatively charged formulations (F10) were approximately 2.3- and 1.7-fold higher than after a suspension. Bioavailability studies also revealed a significant increase in extent of drug absorption from charged vesicles. Tissue histology revealed no signs of inflammation or damage. The study proved that the type and concentration of bile salts as well as carrier surface charge had great influences on oral bioavailability of niosomes. Blocking the lymphatic absorption pathway significantly reduced oral bioavailability of CRV niosomes. Overall twofold enhancement in bioavailability in comparison with drug suspension confers the potential of niosomes as suitable carriers for improved oral delivery of CRV. PMID:26251598

  1. Niosomal carriers enhance oral bioavailability of carvedilol: effects of bile salt-enriched vesicles and carrier surface charge.

    PubMed

    Arzani, Gelareh; Haeri, Azadeh; Daeihamed, Marjan; Bakhtiari-Kaboutaraki, Hamid; Dadashzadeh, Simin

    2015-01-01

    Carvedilol (CRV) is an antihypertensive drug with both alpha and beta receptor blocking activity used to preclude angina and cardiac arrhythmias. To overcome the low, variable oral bioavailability of CRV, niosomal formulations were prepared and characterized: plain niosomes (without bile salts), bile salt-enriched niosomes (bilosomes containing various percentages of sodium cholate or sodium taurocholate), and charged niosomes (negative, containing dicetyl phosphate and positive, containing hexadecyl trimethyl ammonium bromide). All formulations were characterized in terms of encapsulation efficiency, size, zeta potential, release profile, stability, and morphology. Various formulations were administered orally to ten groups of Wistar rats (n=6 per group). The plasma levels of CRV were measured by a validated high-performance liquid chromatography (HPLC) method and pharmacokinetic properties of different formulations were characterized. Contribution of lymphatic transport to the oral bioavailability of niosomes was also investigated using a chylomicron flow-blocking approach. Of the bile salt-enriched vesicles examined, bilosomes containing 20% sodium cholate (F2) and 30% sodium taurocholate (F5) appeared to give the greatest enhancement of intestinal absorption. The relative bioavailability of F2 and F5 formulations to the suspension was estimated to be 1.84 and 1.64, respectively. With regard to charged niosomes, the peak plasma concentrations (Cmax) of CRV for positively (F7) and negatively charged formulations (F10) were approximately 2.3- and 1.7-fold higher than after a suspension. Bioavailability studies also revealed a significant increase in extent of drug absorption from charged vesicles. Tissue histology revealed no signs of inflammation or damage. The study proved that the type and concentration of bile salts as well as carrier surface charge had great influences on oral bioavailability of niosomes. Blocking the lymphatic absorption pathway significantly reduced oral bioavailability of CRV niosomes. Overall twofold enhancement in bioavailability in comparison with drug suspension confers the potential of niosomes as suitable carriers for improved oral delivery of CRV. PMID:26251598

  2. Exceptional charge transport properties of graphene on germanium.

    PubMed

    Cavallo, Francesca; Rojas Delgado, Richard; Kelly, Michelle M; Sánchez Pérez, José R; Schroeder, Daniel P; Xing, Huili Grace; Eriksson, Mark A; Lagally, Max G

    2014-10-28

    The excellent charge transport properties of graphene suggest a wide range of application in analog electronics. While most practical devices will require that graphene be bonded to a substrate, such bonding generally degrades these transport properties. In contrast, when graphene is transferred to Ge(001) its conductivity is extremely high and the charge carrier mobility derived from the relevant transport measurements is, under some circumstances, higher than that of freestanding, edge-supported graphene. We measure a mobility of ∼ 5 × 10(5) cm(2) V(-1) s(-1) at 20 K, and ∼ 10(3) cm(2) V(-1) s(-1) at 300 K. These values are close to the theoretical limit for doped graphene. Carrier densities in the graphene are as high as 10(14) cm(-2) at 300 K. PMID:25203974

  3. Bipolar carrier transport in tris(8-hydroxy-quinolinato) aluminum observed by impedance spectroscopy measurements

    NASA Astrophysics Data System (ADS)

    Ishihara, Shingo; Hase, Hiroyuki; Okachi, Takayuki; Naito, Hiroyoshi

    2011-08-01

    We studied bipolar carrier transport in tris(8-hydroxy-quinolinato) aluminum (Alq3) thin films using impedance spectroscopy (IS). Two transit times were observed in the impedance spectra of the Alq3 double-injection diodes. The mobilities determined from the transit times are in good agreement with the electron and the hole mobilities in Alq3 measured by IS using single injection diodes and by the time-of-flight transient photocurrent technique. The bipolar carrier transport observed in Alq3 shows that the carrier recombination of Alq3 is weak on the basis of the simulation [M. Schmeits, J. Appl. Phys. 101, 084508 (2007)]. Simultaneous measurements of electron and hole mobilities are useful in the study of charge-carrier transport in active layers in organic light-emitting diodes and organic solar cells.

  4. Monte Carlo simulations of charge transport in heterogeneous organic semiconductors

    NASA Astrophysics Data System (ADS)

    Aung, Pyie Phyo; Khanal, Kiran; Luettmer-Strathmann, Jutta

    2015-03-01

    The efficiency of organic solar cells depends on the morphology and electronic properties of the active layer. Research teams have been experimenting with different conducting materials to achieve more efficient solar panels. In this work, we perform Monte Carlo simulations to study charge transport in heterogeneous materials. We have developed a coarse-grained lattice model of polymeric photovoltaics and use it to generate active layers with ordered and disordered regions. We determine carrier mobilities for a range of conditions to investigate the effect of the morphology on charge transport.

  5. Semiconductor nanocrystals in photoconductive polymers: Charge generation and charge transport

    SciTech Connect

    Wang, Ying; Herron, Norman; Suna, A.

    1996-10-01

    A new class of photoconductive polymer composites, based on semiconductor nanocrystals (clusters) and carder-transporting polymers, have been developed. These materials are interesting for their potentials in laser printing, imaging, and photorefractives. We will describe material synthesis, charge transport and charge generation mechanisms. In particular, a model of field-dependent charge generation and separation in nonpolar media (e.g. polymers) will be discussed.

  6. Carrier-mediated transport of peptides by the kidney

    SciTech Connect

    Skopicki, H.A.

    1988-01-01

    Small peptide transport was characterized to determine if: (1) Multiple carriers are present in the luminal membrane of renal proximal tubular cells; (2) Carrier-mediated peptide transport is limited by size; and (3) Gentamicin inhibits carrier-mediated reabsorption of peptides. Uptake of glycyl-({sup 3}H)proline (Gly-Pro) into renal brush border membrane vesicles demonstrated a dual affinity carrier system. Whether multiple carriers are present was further investigated by characterizing the uptake of ({sup 3}H)pyroglutamyl-histidine. To determine if carrier-mediated transport of peptides is limited by size of the molecule, uptake of the hydrolytically resistant tripeptide, ({sup 3}H)pryroglutamyl-histidyl-tryptophan (pGlu-His-Trp), and tetrapeptide, ({sup 3}H)pyroglutamyl-histidyl-tryptophyl-serine (pGlu-His-Trp-Ser) were assessed. These data indicate: multiple carriers exist on the luminal membrane of renal proximal tubular cells for the transport of dipeptides, and tripeptide pGlu-His-Trp and the tetrapeptide pGlu-His-Trp-Ser are not taken up by a carrier-mediated mechanism, suggesting that the carrier may be limited by the size of the substrate.

  7. Interaction of yeast 3-phosphoglycerate kinase with negatively charged carriers.

    PubMed

    Roustan, C; Fattoum, A; Jeanneau, R; Pradel, L A; Schuhmann, D; Vanel, P

    1982-05-01

    The aim of this study was to investigate the possibility of an interaction of yeast 3-phosphoglycerate kinase with negatively charged carriers such as polyanionic agents or a polarized electrode. Various polyanions were found to promote enzyme aggregation as judged by ultracentrifugation measurements and chemical modification. The data obtained suggest that these interactions are mediated through the N-terminal domain of the protein. However, the most striking property of 3-phosphoglycerate kinase described here is concerned with its significant dipolar moment as evidenced by electrocapillary measurements, which allows an orientation of the macromolecule in an electric field. Further, the enzyme could be absorbed by a negatively charged surface, first by hydrophobic links and then oriented perpendicularly to the surface. Therefore, the intrinsic properties of yeast 3-phosphoglycerate kinase agree with the formation of an enzyme-membrane complex and afford the ability for a specific orientation of the molecule at the lipid bilayer surface or in the cytoplasm. PMID:6178443

  8. Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors

    SciTech Connect

    Zhu, Xiaoyang; Frisbie, C Daniel

    2012-08-13

    This research project aims to achieve quantitative and molecular level understanding of charge carriers and traps in field-doped organic semiconductors via in situ optical absorption spectroscopy, in conjunction with time-resolved electrical measurements. During the funding period, we have made major progress in three general areas: (1) probed charge injection at the interface between a polymeric semiconductor and a polymer electrolyte dielectric and developed a thermodynamic model to quantitatively describe the transition from electrostatic to electrochemical doping; (2) developed vibrational Stark effect to probe electric field at buried organic semiconductor interfaces; (3) used displacement current measurement (DCM) to study charge transport at organic/dielectric interfaces and charge injection at metal/organic interfaces.

  9. Collective bulk carrier delocalization driven by electrostatic surface charge accumulation.

    PubMed

    Nakano, M; Shibuya, K; Okuyama, D; Hatano, T; Ono, S; Kawasaki, M; Iwasa, Y; Tokura, Y

    2012-07-26

    In the classic transistor, the number of electric charge carriers--and thus the electrical conductivity--is precisely controlled by external voltage, providing electrical switching capability. This simple but powerful feature is essential for information processing technology, and also provides a platform for fundamental physics research. As the number of charges essentially determines the electronic phase of a condensed-matter system, transistor operation enables reversible and isothermal changes in the system's state, as successfully demonstrated in electric-field-induced ferromagnetism and superconductivity. However, this effect of the electric field is limited to a channel thickness of nanometres or less, owing to the presence of Thomas-Fermi screening. Here we show that this conventional picture does not apply to a class of materials characterized by inherent collective interactions between electrons and the crystal lattice. We prepared metal-insulator-semiconductor field-effect transistors based on vanadium dioxide--a strongly correlated material with a thermally driven, first-order metal-insulator transition well above room temperature--and found that electrostatic charging at a surface drives all the previously localized charge carriers in the bulk material into motion, leading to the emergence of a three-dimensional metallic ground state. This non-local switching of the electronic state is achieved by applying a voltage of only about one volt. In a voltage-sweep measurement, the first-order nature of the metal-insulator transition provides a non-volatile memory effect, which is operable at room temperature. Our results demonstrate a conceptually new field-effect device, extending the concept of electric-field control to macroscopic phase control. PMID:22837001

  10. Polaron mass of charge carriers in semiconductor quantum wells

    SciTech Connect

    Maslov, A. Yu. Proshina, O. V.

    2015-10-15

    A theory of the interaction of charge carriers with optical phonons in a quantum well is developed with consideration for interface optical phonons. The dependence of the polaron effective mass on the quantum-well dimensions and dielectric characteristics of barriers is analyzed in detail. It is shown that, in narrow quantum wells, a quasi-two-dimensional polaron can be formed. In this case, however, the interaction parameters are defined by the charge-carrier effective mass in the quantum well and by the frequencies of interface optical phonons. If barriers are made of a nonpolar material, the polaron effective mass depends on the quantum-well width. As the quantum-well width is increased, a new mechanism of enhancement of the electron–phonon interaction develops. The mechanism is implemented, if the optical phonon energy is equal to the energy of one of the electronic transitions. This condition yields an unsteady dependence of the polaron effective mass on the quantum-well width.

  11. Acoustic carrier transportation induced by surface acoustic waves in graphene in solution

    NASA Astrophysics Data System (ADS)

    Okuda, Satoshi; Ikuta, Takashi; Kanai, Yasushi; Ono, Takao; Ogawa, Shinpei; Fujisawa, Daisuke; Shimatani, Masaaki; Inoue, Koichi; Maehashi, Kenzo; Matsumoto, Kazuhiko

    2016-04-01

    The acoustic charge transportation induced by surface acoustic wave (SAW) propagation in graphene in solution was investigated. The sign of acoustic current (I A) was found to switch when crossing the Dirac point because the major carrier was transitioned from holes to electrons by the change in electrolyte-gate voltage. I A also exhibited a peak value under conditions of both hole and electron conduction. These results can be explained on the basis of a change in the type of major carrier in graphene, as well as a change in the carrier mobility of graphene.

  12. Charge Injection and Transport in Conjugated Polymers.

    NASA Astrophysics Data System (ADS)

    Malliaras, George

    2007-03-01

    We will overview the state-of-the-art in our understanding of charge injection and transport in conjugated polymers. We start by discussing the identifying characteristics of this class of materials, especially in relation with their structure and morphology. We follow by reviewing the advantages and limitations of experimental techniques that are used to probe charge transport. We then embark on a discussion of the fundamentals of charge transport in organics. We follow a didactic approach, where we start from transport in crystalline semiconductors and gradually introduce corrections for space charge effects, for the influence of disorder on mobility, for high charge densities, and for electric field-dependent charge densities. We compare with experimental data from polyfluorenes. We then shift our attention to charge injection. We review some of the recent theories and compared their predictions to experimental data, again from polyfluorenes. We close by proposing directions for future work.

  13. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage...-TRANSPORTATION AND TEMPORARY STORAGE OF HOUSEHOLD GOODS, PROFESSIONAL BOOKS, PAPERS, AND EQUIPMENT, (PBP&E) AND... minimum weight, but the actual weight of HHG, PBP&E and temporary storage is less than the minimum...

  14. Charge transport in lightly reduced graphene oxide: A transport energy perspective

    NASA Astrophysics Data System (ADS)

    Kajen, R. S.; Chandrasekhar, N.; Pey, K. L.; Vijila, C.; Jaiswal, M.; Saravanan, S.; Ng, Andrew M. H.; Wong, C. P.; Loh, K. P.

    2013-02-01

    Significant variation in the charge transport behaviour in graphene oxide (GO) ranging from Schottky to Poole-Frenkel and to space charge limited transport exists. These have been extensively reported in the literature. However, the validity of such conventional charge transport models meant for delocalized carriers, to study charge transport through localised states in GO, a disordered semiconductor is open to question. In this work, we use the concept of transport energy (TE) to model charge transport in lightly reduced GO (RGO) and demonstrate that the TE calculations match well with temperature dependent experimental I-V data on RGO. We report on a temperature dependent TE ranging from a few 10 meV to 0.1 eV in slightly reduced GO. Last, we point out that, despite the success of several delocalised charge transport models in estimating barrier heights that resemble the TE level, they remain largely accidental and lack the insight in which the TE concept provides in understanding charge transport in RGO.

  15. Analysis of carrier transport in photovoltaic structures of P3HT with CdSe nanocrystals

    NASA Astrophysics Data System (ADS)

    Kažukauskas, V.; Couderc, E.; Sakavičius, A.; Nekrošius, A.; Vertelis, V.; Reiss, P.; Djurado, D.; Faure-Vincent, J.

    2015-04-01

    Hybrid photovoltaic structures made of P3HT and branched CdSe nanocrystals (NCs) with 50-90 wt% ratio were investigated. Charge Extraction by Linearly Increasing Voltage (CELIV) mobility and temperature dependent (photo-)conductivity measurements were used to analyze the charge transport. The samples with 50 wt% were photosensitive, but just a minor PV effect was observed. The photovoltaic phenomenon was pronounced in the samples containing 75 wt% or more of NCs. The Open Circuit Voltages up to 1 V were obtained. The recombination of the generated carriers was fast and could be a limiting factor of the cell current. Carrier mobility was up to (3-4) × 10-4 cm2/V s. From the fitting of mobility data the best carrier transport conditions were found in the samples with 75 wt% and 83 wt% of NCs.

  16. Charge carrier photogeneration, trapping, and space-charge field formation in PVK-based photorefractive materials

    NASA Astrophysics Data System (ADS)

    Däubler, T. K.; Bittner, R.; Meerholz, K.; Cimrová, V.; Neher, D.

    2000-05-01

    We studied the dark conductivity (jdark), the photoconductivity (jphoto), and the charge carrier photogeneration efficiency η of poly(N-vinylcarbazole)-based photorefractive (PR) materials with different glass-transition temperatures (Tg) and chromophore content (ρCHR). Measurements were carried out at wavelengths similar to those used in degenerate four-wave mixing (DFWM) and two-beam coupling (2BC) experiments. Both thick (37 μm) and thin samples (~1 μm) were analyzed. Photoconductivity experiments at different temperatures show that both jdark and jphoto are thermally activated. For jdark the activation is not related to the glass-transition temperature of the blends, whereas photocurrents exhibit a universal behavior with respect to Tr=Tg-T. The charge carrier photogeneration efficiency η was measured by xerographic discharge experiments. η was found to be independent of both Tg and of ρCHR. The photoconductivity gain factor G defined as the number of charge carriers measured in photoconductivity in relation to the number of carriers initially photogenerated as determined by the xerographic experiments is used to compare the results of photoconductivity and xerographic discharge experiments. G is found to be much smaller than unity even for thin samples, which indicates that the mean free path of the photogenerated charge carriers is less than 1 μm at photoelectrical equilibrium. Using Schildkraut's model for the space-charge field formation in organic PR materials, trap densities Ti of approximately 1017 cm-3 could be derived from G. The field and temperature dependence of Ti is independent of ρCHR and might account for the universal Tr dependence of jphoto. The estimated trap densities are used to calculate the first-order Fourier component of the space-charge field in the PR materials illuminated with a sinusoidal intensity pattern. Modifying Schildkraut's model so that the tilt between the applied electric field and the index of refraction grating is taken into account yields saturation fields of approximately 100 V/μm in agreement with findings from PR experiments. The dramatic decrease of the space-charge field when the temperature exceeds the glass-transition temperature of the blend is fully explained by a decrease in trap density. The fact that the trap density depends on the temperature with respect to Tg and not on the absolute temperature suggests that the relevant traps are most likely of conformational nature.

  17. Structural influences on charge carrier dynamics for small-molecule organic photovoltaics

    SciTech Connect

    Wang, Zhiping Shibata, Yosei; Yamanari, Toshihiro; Matsubara, Koji; Yoshida, Yuji; Miyadera, Tetsuhiko; Saeki, Akinori; Seki, Shu; Zhou, Ying

    2014-07-07

    We investigated the structural influences on the charge carrier dynamics in zinc phthalocyanine/fullerene (ZnPc/C{sub 60}) photovoltaic cells by introducing poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) and 2,5-bis(4-biphenylyl)-bithiophene (BP2T) between indium tin oxide and ZnPc layers. ZnPc films can be tuned to be round, long fiber-like, and short fiber-like structure, respectively. Time-resolved microwave conductivity measurements reveal that charge carrier lifetime in ZnPc/C{sub 60} bilayer films is considerably affected by the intra-grain properties. Transient photocurrent of ZnPc single films indicated that the charge carriers can transport for a longer distance in the long fiber-like grains than that in the round grains, due to the greatly lessened grain boundaries. By carefully controlling the structure of ZnPc films, the short-circuit current and fill factor of a ZnPc/C{sub 60} heterojunction solar cell with BP2T are significantly improved and the power conversion efficiency is increased to 2.6%, which is 120% larger than the conventional cell without BP2T.

  18. Structural influences on charge carrier dynamics for small-molecule organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Wang, Zhiping; Miyadera, Tetsuhiko; Saeki, Akinori; Zhou, Ying; Seki, Shu; Shibata, Yosei; Yamanari, Toshihiro; Matsubara, Koji; Yoshida, Yuji

    2014-07-01

    We investigated the structural influences on the charge carrier dynamics in zinc phthalocyanine/fullerene (ZnPc/C60) photovoltaic cells by introducing poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) and 2,5-bis(4-biphenylyl)-bithiophene (BP2T) between indium tin oxide and ZnPc layers. ZnPc films can be tuned to be round, long fiber-like, and short fiber-like structure, respectively. Time-resolved microwave conductivity measurements reveal that charge carrier lifetime in ZnPc/C60 bilayer films is considerably affected by the intra-grain properties. Transient photocurrent of ZnPc single films indicated that the charge carriers can transport for a longer distance in the long fiber-like grains than that in the round grains, due to the greatly lessened grain boundaries. By carefully controlling the structure of ZnPc films, the short-circuit current and fill factor of a ZnPc/C60 heterojunction solar cell with BP2T are significantly improved and the power conversion efficiency is increased to 2.6%, which is 120% larger than the conventional cell without BP2T.

  19. 14 CFR 382.31 - May carriers impose special charges on passengers with a disability for providing services and...

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false May carriers impose special charges on... 382.31 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) SPECIAL REGULATIONS NONDISCRIMINATION ON THE BASIS OF DISABILITY IN AIR TRAVEL...

  20. 14 CFR 382.31 - May carriers impose special charges on passengers with a disability for providing services and...

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 4 2011-01-01 2011-01-01 false May carriers impose special charges on... 382.31 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) SPECIAL REGULATIONS NONDISCRIMINATION ON THE BASIS OF DISABILITY IN AIR TRAVEL...

  1. 14 CFR 382.31 - May carriers impose special charges on passengers with a disability for providing services and...

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 4 2012-01-01 2012-01-01 false May carriers impose special charges on... 382.31 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) SPECIAL REGULATIONS NONDISCRIMINATION ON THE BASIS OF DISABILITY IN AIR TRAVEL...

  2. 14 CFR 382.31 - May carriers impose special charges on passengers with a disability for providing services and...

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 4 2014-01-01 2014-01-01 false May carriers impose special charges on... 382.31 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) SPECIAL REGULATIONS NONDISCRIMINATION ON THE BASIS OF DISABILITY IN AIR TRAVEL...

  3. 14 CFR 382.31 - May carriers impose special charges on passengers with a disability for providing services and...

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 4 2013-01-01 2013-01-01 false May carriers impose special charges on... 382.31 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) SPECIAL REGULATIONS NONDISCRIMINATION ON THE BASIS OF DISABILITY IN AIR TRAVEL...

  4. Charge transport in single crystal organic semiconductors

    NASA Astrophysics Data System (ADS)

    Xie, Wei

    Organic electronics have engendered substantial interest in printable, flexible and large-area applications thanks to their low fabrication cost per unit area, chemical versatility and solution processability. Nevertheless, fundamental understanding of device physics and charge transport in organic semiconductors lag somewhat behind, partially due to ubiquitous defects and impurities in technologically useful organic thin films, formed either by vacuum deposition or solution process. In this context, single-crystalline organic semiconductors, or organic single crystals, have therefore provided the ideal system for transport studies. Organic single crystals are characterized by their high chemical purity and outstanding structural perfection, leading to significantly improved electrical properties compared with their thin-film counterparts. Importantly, the surfaces of the crystals are molecularly flat, an ideal condition for building field-effect transistors (FETs). Progress in organic single crystal FETs (SC-FETs) is tremendous during the past decade. Large mobilities ~ 1 - 10 cm2V-1s-1 have been achieved in several crystals, allowing a wide range of electrical, optical, mechanical, structural, and theoretical studies. Several challenges still remain, however, which are the motivation of this thesis. The first challenge is to delineate the crystal structure/electrical property relationship for development of high-performance organic semiconductors. This thesis demonstrates a full spectrum of studies spanning from chemical synthesis, single crystal structure determination, quantum-chemical calculation, SC-OFET fabrication, electrical measurement, photoelectron spectroscopy characterization and extensive device optimization in a series of new rubrene derivatives, motivated by the fact that rubrene is a benchmark semiconductor with record hole mobility ~ 20 cm2V-1s-1. With successful preservation of beneficial pi-stacking structures, these rubrene derivatives form high-quality single crystals and exhibit large ambipolar mobilities. Nevertheless, a gap remains between the theory-predicted properties and this preliminary result, which itself is another fundamental challenge. This is further addressed by appropriate device optimization, and in particular, contact engineering approach to improve the charge injection efficiencies. The outcome is not only the achievement of new record ambipolar mobilities in one of the derivatives, namely, 4.8 cm2V-1s-1 for holes and 4.2 cm2V-1s-1 for electrons, but also provides a comprehensive and rational pathway towards the realization of high-performance organic semiconductors. Efforts to achieve high mobility in other organic single crystals are also presented. The second challenge is tuning the transition of electronic ground states, i.e., semiconducting, metallic and superconducting, in organic single crystals. Despite an active research area since four decades ago, we aim to employ the electrostatic approach instead of chemical doping for reversible and systematic control of charge densities within the same crystal. The key material in this study is the high-capacitance electrolyte, such as ionic liquids (ILs), whose specific capacitance reaches ~ μF/cm2, thus allowing accumulation of charge carrier above 1013 cm-2 when novel transport phenomena, such as insulator-metal transition and superconductivity, are likely to occur. This thesis addresses the electrical characterization, device physics and transport physics in electrolyte-gated single crystals, in the device architecture known as the electrical double layer transistor (EDLT). A detailed characterization scheme is first demonstrated for accurate determination of several key parameters, e.g., carrier mobility and charge density, in organic EDLTs. Further studies, combining both experiments and theories, are devoted to understanding the unusual charge density dependent channel conductivity and gate-to-channel capacitance behaviors. In addition, Hall effect and temperature-dependent measurements are employed for more in-depth understandings of the transport mechanism in these unconventional devices at the extreme charge densities. Inspiringly, a truly metallic state is within reach of this type of device structure. Overall, this thesis demonstrates high mobility, high charge density and high performance organic single crystal transistors, with versatile fabrication techniques, comprehensive electrical and structural characterizations, well-developed theories and models and advanced transport measurements.

  5. Fractal spectrum of charge carriers in quasiperiodic graphene structures

    NASA Astrophysics Data System (ADS)

    Sena, S. H. R.; Pereira, J. M., Jr.; Farias, G. A.; Vasconcelos, M. S.; Albuquerque, E. L.

    2010-11-01

    In this work we investigate the interaction of charge carriers in graphene with a series of p-n-p junctions arranged according to a deterministic quasiperiodic substitutional Fibonacci sequence. The junctions create a potential landscape with quantum wells and barriers of different widths, allowing the existence of quasi-confined states. Spectra of quasi-confined states are calculated for several generations of the Fibonacci sequence as a function of the wavevector component parallel to the barrier interfaces. The results show that, as the Fibonacci generation is increased, the dispersion branches form energy bands distributed as a Cantor-like set. Besides, for a quasiperiodic set of potential barriers, we obtain the electronic tunneling probability as a function of energy, which shows a striking self-similar behavior for different generation numbers.

  6. Fractal spectrum of charge carriers in quasiperiodic graphene structures.

    PubMed

    Sena, S H R; Pereira, J M; Farias, G A; Vasconcelos, M S; Albuquerque, E L

    2010-11-24

    In this work we investigate the interaction of charge carriers in graphene with a series of p-n-p junctions arranged according to a deterministic quasiperiodic substitutional Fibonacci sequence. The junctions create a potential landscape with quantum wells and barriers of different widths, allowing the existence of quasi-confined states. Spectra of quasi-confined states are calculated for several generations of the Fibonacci sequence as a function of the wavevector component parallel to the barrier interfaces. The results show that, as the Fibonacci generation is increased, the dispersion branches form energy bands distributed as a Cantor-like set. Besides, for a quasiperiodic set of potential barriers, we obtain the electronic tunneling probability as a function of energy, which shows a striking self-similar behavior for different generation numbers. PMID:21403366

  7. Layered Distribution of Charge Carriers in Organic Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Shehu, Arian; Quiroga, Santiago D.; D'Angelo, Pasquale; Albonetti, Cristiano; Borgatti, Francesco; Murgia, Mauro; Scorzoni, Andrea; Stoliar, Pablo; Biscarini, Fabio

    2010-06-01

    Drain-source current in organic thin-film transistors has been monitored in situ and in real time during the deposition of pentacene. The current starts to flow when percolation of the first monolayer (ML) occurs and, depending on the deposition rate, saturates at a coverage in the range 2-7 MLs. The number of active layers contributing to the current and the spatial distribution of charge carriers are modulated by the growth mode. The thickness of the accumulation layer, represented by an effective Debye length, scales as the morphological correlation length. These results show that the effective Debye length is not just a material parameter, but depends on the multiscale morphology. Earlier controversial results can be unified within this framework.

  8. Ultrafast and spatially resolved studies of charge carriers in atomically thin molybdenum disulfide

    NASA Astrophysics Data System (ADS)

    Wang, Rui; Ruzicka, Brian A.; Kumar, Nardeep; Bellus, Matthew Z.; Chiu, Hsin-Ying; Zhao, Hui

    2012-07-01

    Atomically thin molybdenum disulfide is emerging as a new nanomaterial with potential applications in the fields of electronic and photonics. Charge carrier dynamics plays an essential role in determining its electronic and optical properties. We report spatially and temporally resolved pump-probe studies of charge carriers in atomically thin molybdenum disulfide samples fabricated by mechanical exfoliation. Carriers are injected by interband absorption of a 390-nm pump pulse and detected by measuring differential reflection of a time-delayed and spatially scanned probe pulse that is tuned to an exciton transition. Several parameters on charge carrier dynamics are deduced, including carrier lifetime, diffusion coefficient, diffusion length, and mobility.

  9. Mechanisms of carrier transport induced by a microswimmer bath.

    PubMed

    Kaiser, Andreas; Sokolov, Andrey; Aranson, Igor S; Löwen, Hartmut

    2015-04-01

    It was shown that a wedgelike microparticle (referred to as "carrier") exhibits a directed translational motion along the wedge cusp if it is exposed to a bath of microswimmers. Here we model this effect in detail by resolving the microswimmers explicitly using interaction models with different degrees of mutual alignment. Using computer simulations we study the impact of these interactions on the transport efficiency of a V-shaped carrier. We show that the transport mechanism itself strongly depends on the degree of alignment embodied in the modeling of the individual swimmer dynamics. For weak alignment, optimal carrier transport occurs in the turbulent microswimmer state and is induced by swirl depletion inside the carrier. For strong aligning interactions, optimal transport occurs already in the dilute regime and is mediated by a polar cloud of swimmers in the carrier wake pushing the wedge-particle forward. We also demonstrate that the optimal shape of the carrier leading to maximal transport speed depends on the kind of interaction model used. PMID:25347885

  10. Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

    2011-07-01

    We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

  11. Nature of charge carriers in disordered molecular solids: are polarons compatible with observations?

    PubMed

    Parris, P E; Kenkre, V M; Dunlap, D H

    2001-09-17

    Polaronic theories for charge transport in disordered organic solids, particularly molecularly doped polymers, have been plagued by issues of internal consistency related to the magnitude of physical parameters. We present a natural resolution of the problem by showing that, in the presence of correlated disorder, polaronic carriers with binding energies Delta approximately 50-500 meV and transfer integrals J approximately 1-20 meV are completely consistent with the magnitudes of field and temperature dependent mobilities observed. PMID:11580534

  12. Charge carrier trapping into mobile, ionic defects in nanoporous ultra-low-k dielectric materials

    NASA Astrophysics Data System (ADS)

    Plawsky, Joel; Borja, Juan; Lu, Toh-Ming; Gill, William

    2014-03-01

    Reliability and robustness of low-k materials for advanced interconnects has become a major challenge for the continuous down-scaling of silicon semiconductor devices. Metal catalyzed time dependent breakdown (TDDB) is a major force preventing the integration of sub-32nm process technology nodes. We investigate how ionic species can become trapping centers (mobile defects) for charge carriers. A mechanism for describing and quantifying the trapping of charge carriers into mobile ions under bias and temperature stress is presented and experimentally investigated. The dynamics of trapping into ionic centers are severely impacted by temperature and species mass transport. After extended bias and temperature stress, the magnitude of charge trapping into ionic centers decreases asymptotically. Various processes such as the reduction of ionic species, moisture outgassing, and the inhibition of ionic drift via the distortion of local fields were investigated as possible cause for the reduction in charge trapping. Simulations suggest that built-in fields reduce the effect of an externally applied field in directing ionic drift, which can lead to the inhibition of the trapping mechanism. In addition, conduction mechanisms are investigated for reactive and inert electrodes. Seimconductor Research Corporation.

  13. Temperature-dependent charge transport in copper indium diselenide nanocrystal films

    NASA Astrophysics Data System (ADS)

    Lombardo, Christopher J.; Akhavan, Vahid A.; Panthani, Matthew G.; Goodfellow, Brian W.; Korgel, Brian A.; Dodabalapur, Ananth

    2012-04-01

    This manuscript reports the temperature dependence of majority carrier transport in p-type films of copper indium diselenide (CuInSe2) nanocrystals. Charge transport parameters, such as the carrier concentration and the electrical conductivity as well as the charge transport mechanisms have been characterized through measurements of electrical capacitance and electrical current as a function of applied voltage bias and temperature. At low temperatures, below 181 K, the temperature dependence of the conductivity is consistent with a variable range hopping mechanism for transport, while at higher temperatures, above 181 K, the transport mechanism shifts to nearest neighbor hopping. Charge transport measurements were also studied under AM1.5 illumination to show how energetic barriers for charge transport are reduced under solar cell-like operating conditions.

  14. Proton-irradiation effects on the charge transport in highly oriented pyrolytic graphite

    NASA Astrophysics Data System (ADS)

    Kim, Jinsoo; Kim, Dowan; Lee, Kyu Won; Choi, E. H.; Noh, S. J.; Kim, H. S.; Lee, Cheol Eui

    2014-05-01

    We have investigated the proton-irradiation effects on the electrical resistivity and magnetoresistance of highly oriented pyrolytic graphite (HOPG). The temperature- and magnetic field-dependent measurements indicate that the carrier mobility rather than the carrier density dictates the charge transport in the HOPG systems.

  15. Thermodynamic picture of ultrafast charge transport in graphene.

    PubMed

    Mics, Zoltán; Tielrooij, Klaas-Jan; Parvez, Khaled; Jensen, Søren A; Ivanov, Ivan; Feng, Xinliang; Müllen, Klaus; Bonn, Mischa; Turchinovich, Dmitry

    2015-01-01

    The outstanding charge transport properties of graphene enable numerous electronic applications of this remarkable material, many of which are expected to operate at ultrahigh speeds. In the regime of ultrafast, sub-picosecond electric fields, however, the very high conduction properties of graphene are not necessarily preserved, with the physical picture explaining this behaviour remaining unclear. Here we show that in graphene, the charge transport on an ultrafast timescale is determined by a simple thermodynamic balance maintained within the graphene electronic system acting as a thermalized electron gas. The energy of ultrafast electric fields applied to graphene is converted into the thermal energy of its entire charge carrier population, near-instantaneously raising the electronic temperature. The dynamic interplay between heating and cooling of the electron gas ultimately defines the ultrafast conductivity of graphene, which in a highly nonlinear manner depends on the dynamics and the strength of the applied electric fields. PMID:26179498

  16. Thermodynamic picture of ultrafast charge transport in graphene

    NASA Astrophysics Data System (ADS)

    Mics, Zoltán; Tielrooij, Klaas-Jan; Parvez, Khaled; Jensen, Søren A.; Ivanov, Ivan; Feng, Xinliang; Müllen, Klaus; Bonn, Mischa; Turchinovich, Dmitry

    2015-07-01

    The outstanding charge transport properties of graphene enable numerous electronic applications of this remarkable material, many of which are expected to operate at ultrahigh speeds. In the regime of ultrafast, sub-picosecond electric fields, however, the very high conduction properties of graphene are not necessarily preserved, with the physical picture explaining this behaviour remaining unclear. Here we show that in graphene, the charge transport on an ultrafast timescale is determined by a simple thermodynamic balance maintained within the graphene electronic system acting as a thermalized electron gas. The energy of ultrafast electric fields applied to graphene is converted into the thermal energy of its entire charge carrier population, near-instantaneously raising the electronic temperature. The dynamic interplay between heating and cooling of the electron gas ultimately defines the ultrafast conductivity of graphene, which in a highly nonlinear manner depends on the dynamics and the strength of the applied electric fields.

  17. Thermodynamic picture of ultrafast charge transport in graphene

    PubMed Central

    Mics, Zoltán; Tielrooij, Klaas-Jan; Parvez, Khaled; Jensen, Søren A.; Ivanov, Ivan; Feng, Xinliang; Müllen, Klaus; Bonn, Mischa; Turchinovich, Dmitry

    2015-01-01

    The outstanding charge transport properties of graphene enable numerous electronic applications of this remarkable material, many of which are expected to operate at ultrahigh speeds. In the regime of ultrafast, sub-picosecond electric fields, however, the very high conduction properties of graphene are not necessarily preserved, with the physical picture explaining this behaviour remaining unclear. Here we show that in graphene, the charge transport on an ultrafast timescale is determined by a simple thermodynamic balance maintained within the graphene electronic system acting as a thermalized electron gas. The energy of ultrafast electric fields applied to graphene is converted into the thermal energy of its entire charge carrier population, near-instantaneously raising the electronic temperature. The dynamic interplay between heating and cooling of the electron gas ultimately defines the ultrafast conductivity of graphene, which in a highly nonlinear manner depends on the dynamics and the strength of the applied electric fields. PMID:26179498

  18. Transmission line model for strained quantum well lasers including carrier transport and carrier heating effects.

    PubMed

    Xia, Mingjun; Ghafouri-Shiraz, H

    2016-03-01

    This paper reports a new model for strained quantum well lasers, which are based on the quantum well transmission line modeling method where effects of both carrier transport and carrier heating have been included. We have applied this new model and studied the effect of carrier transport on the output waveform of a strained quantum well laser both in time and frequency domains. It has been found that the carrier transport increases the turn-on, turn-off delay times and damping of the quantum well laser transient response. Also, analysis in the frequency domain indicates that the carrier transport causes the output spectrum of the quantum well laser in steady state to exhibit a redshift which has a narrower bandwidth and lower magnitude. The simulation results of turning-on transients obtained by the proposed model are compared with those obtained by the rate equation laser model. The new model has also been used to study the effects of pump current spikes on the laser output waveforms properties, and it was found that the presence of current spikes causes (i) wavelength blueshift, (ii) larger bandwidth, and (iii) reduces the magnitude and decreases the side-lobe suppression ratio of the laser output spectrum. Analysis in both frequency and time domains confirms that the new proposed model can accurately predict the temporal and spectral behaviors of strained quantum well lasers. PMID:26974607

  19. Low temperature carrier transport properties in isotopically controlled germanium

    SciTech Connect

    Itoh, K.

    1994-12-01

    Investigations of electronic and optical properties of semiconductors often require specimens with extremely homogeneous dopant distributions and precisely controlled net-carrier concentrations and compensation ratios. The previous difficulties in fabricating such samples are overcome as reported in this thesis by growing high-purity Ge single crystals of controlled {sup 75}Ge and {sup 70}Ge isotopic compositions, and doping these crystals by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios are precisely determined by the thermal neutron fluence and the [{sup 74}Ge]/[{sup 70}Ge] ratios of the starting Ge materials, respectively. This method also guarantees unprecedented doping uniformity. Using such samples the authors have conducted four types of electron (hole) transport studies probing the nature of (1) free carrier scattering by neutral impurities, (2) free carrier scattering by ionized impurities, (3) low temperature hopping conduction, and (4) free carrier transport in samples close to the metal-insulator transition.

  20. Mechanisms of Carrier Transport Induced by a Microswimmer Bath

    SciTech Connect

    Kaiser, Andreas; Sokolov, Andrey; Aranson, Igor S.; Lowen, Hartmut

    2015-04-01

    Recently, it was found that a wedgelike microparticle (referred to as ”carrier”) which is only allowed to translate but not to rotate exhibits a directed translational motion along the wedge cusp if it is exposed to a bath of microswimmers. Here we model this effect in detail by resolving the microswimmers explicitly using interaction models with different degrees of mutual alignment. Using computer simulations we study the impact of these interactions on the transport efficiency of V-shaped carrier. We show that the transport mechanisms itself strongly depends on the degree of alignment embodied in the modelling of the individual swimmer dynamics. For weak alignment, optimal carrier transport occurs in the turbulent microswimmer state and is induced by swirl depletion inside the carrier. For strong aligning interactions, optimal transport occurs already in the dilute regime and is mediated by a polar cloud of swimmers in the carrier wake pushing the wedge-particle forward. We also demonstrate that the optimal shape of the carrier leading to maximal transport speed depends on the kind of interaction model used.

  1. Charge Transport in Hybrid Halide Perovskite Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Jurchescu, Oana

    Hybrid organic-inorganic trihalide perovskite (HTP) materials exhibit a strong optical absorption, tunable band gap, long carrier lifetimes and fast charge carrier transport. These remarkable properties, coupled with their reduced complexity processing, make the HTPs promising contenders for large scale, low-cost thin film optoelectronic applications. But in spite of the remarkable demonstrations of high performance solar cells, light-emitting diodes and field-effect transistor devices, all of which took place in a very short time period, numerous questions related to the nature and dynamics of the charge carriers and their relation to device performance, stability and reliability still remain. This presentation describes the electrical properties of HTPs evaluated from field-effect transistor measurements. The electrostatic gating of provides an unique platform for the study of intrinsic charge transport in these materials, and, at the same time, expand the use of HTPs towards switching electronic devices, which have not been explored previously. We fabricated FETs on SiO2 and polymer dielectrics from spin coating, thermal evaporation and spray deposition and compare their properties. CH3NH3PbI3-xClx can reach balanced electron and hole mobilities of 10 cm2/Vs upon tuning the thin-film microstructure, injection and the defect density at the semiconductor/dielectric interface. The work was performed in collaboration with Yaochuan Mei (Wake Forest University), Chuang Zhang, and Z. Valy Vardeny (University of Utah). The work is supported by ONR Grant N00014-15-1-2943.

  2. Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening.

    PubMed

    Yu, Zhihao; Ong, Zhun-Yong; Pan, Yiming; Cui, Yang; Xin, Run; Shi, Yi; Wang, Baigeng; Wu, Yun; Chen, Tangsheng; Zhang, Yong-Wei; Zhang, Gang; Wang, Xinran

    2016-01-01

    By combining a high-? dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room-temperature mobility of ?150 cm(2) V(-1) s(-1) and room-temperature phonon-limited transport in a monolayer MoS2 transistor for the first time. PMID:26603698

  3. Intrinsic slow charge response in the perovskite solar cells: Electron and ion transport

    NASA Astrophysics Data System (ADS)

    Shi, Jiangjian; Xu, Xin; Zhang, Huiyin; Luo, Yanhong; Li, Dongmei; Meng, Qingbo

    2015-10-01

    The intrinsic charge response and hysteresis characteristic in the perovskite solar cell has been investigated by an electrically modulated transient photocurrent technology. An ultraslow charge response process in the timescale of seconds is observed, which can be well explained by the ion migration in the perovskite CH3NH3PbI3 film driven by multiple electric fields derived from the heterojunction depletion charge, the external modulation, and the accumulated ion charge. Furthermore, theoretical calculation of charge transport reveals that the hysteresis behavior is also significantly influenced by the interfacial charge extraction velocity and the carrier transport properties inside the cell.

  4. Quantum control of charge carrier dynamics in layered semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Shuford, Kevin Lee

    This dissertation presents theoretical studies of charge carrier dynamics in layered semiconductor heterostructures. Carrier dynamics are investigated by solving the Schrodinger equation numerically on a grid. Control methods are used to discover laser pulses that actively manipulate and control dynamics in quantum well systems. Results indicate that a wide array of possible target objectives can be achieved successfully using simple, experimentally feasible electric fields. A tailored laser pulse can drive an electronic wave packet to maximum overlap with a target distribution at a specified time. A genetic algorithm is used to determine the optimal parameters of the excitation pulse. The robustness of the results is analyzed by considering fluctuations in the do field, two types of sample defects, and environmental coupling. In all cases studied, the genetic algorithm can re-optimize the laser field to achieve the control objective. The effects of Coulomb interactions with regard to controlling wave packets in quantum wells are investigated. The goal is to clarify the extent that the attraction between electrons and holes affects control. The primary effect is to modify the energy splittings, which induces small changes in oscillation period and frequency of the wave packet. The results show that the interaction does not substantially affect the control, yet can alter dynamics in some cases. Quantum wells are sources of controllable radiation. Oscillating wave packets in the conduction band typically radiate in the Terahertz frequency regime. The frequency and amplitude of the radiation is tunable by altering excitation conditions. Terahertz fields can be designed by controlling the characteristics of the emission, and used as excitation sources for other applications. Electronic population can be switched adiabatically between quantum wells. A time-dependent do field guides an initial state along a smooth path to a target state. The general requirements for adiabaticity are determined. Successfully meeting the requirements produces a pure state that evolves adiabatically to the final state. This procedure provides an effective method for adiabatic passage with smooth transitions, selectivity, and reversibility.

  5. Electric Properties of Obsidian: Evidence for Positive Hole Charge Carriers

    NASA Astrophysics Data System (ADS)

    Nordvik, R.; Freund, F. T.

    2012-12-01

    The blackness of obsidian is due to the presence of oxygen anions in the valence state 1-, creating broad energy levels at the upper edge of the valence band, which absorb visible light over a wide spectral range. These energy states are associated with defect electrons in the oxygen anion sublattice, well-known from "smoky quartz", where Al substituting for Si captures a defect electron in the oxygen anion sublattice for charge compensation [1]. Such defect electrons, also known as positive holes, are responsible for the increase in electrical conductivity in igneous rocks when uniaxial stresses are applied, causing the break-up of pre-existing peroxy defects, Si-OO-Si [2]. Peroxy defects in obsidian cannot be so easily activated by mechanical stress because the glassy matrix will break before sufficiently high stress levels can be reached. If peroxy defects do exist, however, they can be studied by activating them thermally [3]. We describe experiments with rectangular slabs of obsidian with Au electrodes at both ends. Upon heating one end, we observe (i) a thermopotential and (ii) a thermocurrent developing at distinct temperatures around 250°C and 450°C, marking the 2-step break-up of peroxy bonds. [1] Schnadt, R., and Schneider, J.: The electronic structure of the trapped-hole center in smoky quartz, Zeitschrift Physik B Condensed Matter 11, 19-42, 1970. [2] Freund, F. T., Takeuchi, A., and Lau, B. W.: Electric currents streaming out of stressed igneous rocks - A step towards understanding pre-earthquake low frequency EM emissions, Physics and Chemistry of the Earth, 31, 389-396, 2006. [3] Freund, F., and Masuda, M. M.: Highly mobile oxygen hole-type charge carriers in fused silica, Journal Material Research, 8, 1619-1622, 1991.

  6. Effects of Disorder on Carrier Transport in Cu2 SnS3

    NASA Astrophysics Data System (ADS)

    Baranowski, Lauryn L.; McLaughlin, Kevin; Zawadzki, Pawel; Lany, Stephan; Norman, Andrew; Hempel, Hannes; Eichberger, Rainer; Unold, Thomas; Toberer, Eric S.; Zakutayev, Andriy

    2015-10-01

    Cu2SnS3 is a promising absorber material that has attracted significant interest in recent years. However, similar to Cu2 ZnSn (S ,Se )4 (CZTS), Cu2 SnS3 displays cation disorder, which complicates the scientific understanding and technological applications of these materials. In this work, we use postdeposition annealing to convert disordered Cu2 SnS3 thin films to the ordered structure. After annealing, we observe crystal structure changes and detect improvements in the majority carrier (hole) transport. However, when the minority carrier (electron) transport is investigated by using optical-pump terahertz-probe spectroscopy, minimal differences are observed in the lifetimes of the photoexcited charge carriers in the ordered and disordered Cu2 SnS3 . By combining the experimental data with theoretical results from first-principles calculations and Monte Carlo simulations, we are able to conclude that even ostensibly "ordered" Cu2 SnS3 displays minority carrier transport properties corresponding to the disordered structure. Transmission electron microscopy investigations reveal only a very low density of planar defects (stacking faults and/or twins) in the annealed film, suggesting that these imperfections can dominate minority carrier transport even at low levels. The results of this study highlight some of the challenges in the development of Cu2 SnS3 -based photovoltaics and have implications for other disordered multinary semiconductors such as CZTS.

  7. Charge-Carrier Dynamics in Organic-Inorganic Metal Halide Perovskites.

    PubMed

    Herz, Laura M

    2016-05-27

    Hybrid organic-inorganic metal halide perovskites have recently emerged as exciting new light-harvesting and charge-transporting materials for efficient photovoltaic devices. Yet knowledge of the nature of the photogenerated excitations and their subsequent dynamics is only just emerging. This article reviews the current state of the field, focusing first on a description of the crystal and electronic band structure that give rise to the strong optical transitions that enable light harvesting. An overview is presented of the numerous experimental approaches toward determining values for exciton binding energies, which appear to be small (a few milli-electron volts to a few tens of milli-electron volts) and depend significantly on temperature because of associated changes in the dielectric function. Experimental evidence for charge-carrier relaxation dynamics within the first few picoseconds after excitation is discussed in terms of thermalization, cooling, and many-body effects. Charge-carrier recombination mechanisms are reviewed, encompassing trap-assisted nonradiative recombination that is highly specific to processing conditions, radiative bimolecular (electron-hole) recombination, and nonradiative many-body (Auger) mechanisms. PMID:26980309

  8. Charge carrier mobilities in organic semiconductors: crystal engineering and the importance of molecular contacts.

    PubMed

    Bashir, Asif; Heck, Alexander; Narita, Akimitsu; Feng, Xinliang; Nefedov, Alexei; Rohwerder, Michael; Müllen, Klaus; Elstner, Marcus; Wöll, Christof

    2015-09-14

    We have conducted a combined experimental and theoretical study on the optimization of hexa-peri-hexabenzocoronene (HBC) as organic semiconductor. While orientations with high electronic coupling are unfavorable in the native liquid crystalline phase of HBC, we enforced such orientations by applying external constraints. To this end, self-assembled monolayers (SAMs) were formed by a non-conventional preparation method on an Au-substrate using electrochemical control. Within these SAMs the HBC units are forced into favorable orientations that cannot be achieved by unconstrained crystallization. For simulating the charge transport we applied a recently developed approach, where the molecular structure and the charge carrier are propagated simultaneously during a molecular dynamics simulation. Experiments as well as simulations are mutually supportive of an improved mobility in these novel materials. The implication of these findings for a rational design of future organic semiconductors will be discussed. PMID:26235109

  9. Drift of charge carriers in crystalline organic semiconductors.

    PubMed

    Dong, Jingjuan; Si, Wei; Wu, Chang-Qin

    2016-04-14

    We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ∼10(5) V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes. PMID:27083750

  10. Drift of charge carriers in crystalline organic semiconductors

    NASA Astrophysics Data System (ADS)

    Dong, Jingjuan; Si, Wei; Wu, Chang-Qin

    2016-04-01

    We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ˜105 V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes.

  11. Electron and molecular dynamics: Penning ionization and molecular charge transport

    NASA Astrophysics Data System (ADS)

    Madison, Tamika Arlene

    An understanding of fundamental reaction dynamics is an important problem in chemistry. In this work, experimental and theoretical methods are combined to study the dynamics of fundamental chemical reactions. Molecular collision and dissociation dynamics are explored with the Penning ionization of amides, while charge transfer reactions are examined with charge transport in organic thin film devices. Mass spectra from the Penning ionization of formamide by He*, Ne*, and Ar* were measured using molecular beam experiments. When compared to 70eV electron ionization spectra, the He* and Ne* spectra show higher yields of fragments resulting from C--N and C--H bond cleavage, while the Ar* spectrum only shows the molecular ion, H-atom elimination, and decarbonylation. The differences in yields and observed fragments are attributed to the differences in the dynamics of the two ionization methods. Fragmentation in the Ar* spectrum was analyzed using quantum chemistry and RRKM calculations. Calculated yields for the Ar* spectrum are in excellent agreement with experiment and show that 15% and 50% of the yields for decarbonylation and H-atom elimination respectively are attributed to tunneling. The effects of defects, traps, and electrostatic interactions on charge transport in imperfect organic field effect transistors were studied using course-grained Monte Carlo simulations with explicit introduction of defect and traps. The simulations show that electrostatic interactions dramatically affect the field and carrier concentration dependence of charge transport in the presence of a significant number of defects. The simulations also show that while charge transport decreases linearly as a function of neutral defect concentration, it is roughly unaffected by charged defect concentration. In addition, the trap concentration dependence on charge transport is shown to be sensitive to the distribution of trap sites. Finally, density functional theory calculations were used to study how charge localization affects the orbital energies of positively charged bithiophene clusters. These calculations show that the charge delocalizes over at least seven molecules, is more likely to localize on "tilted" molecules due to polarization effects, and affects molecules anisotropically. These results suggest that models for charge transport in organic semiconductors should be modified to account for charge delocalization and intermolecular interactions.

  12. Charge generation, charge transport, and residual charge in the electrospinning of polymers: A review of issues and complications

    NASA Astrophysics Data System (ADS)

    Collins, George; Federici, John; Imura, Yuki; Catalani, Luiz H.

    2012-02-01

    Electrospinning has become a widely implemented technique for the generation of nonwoven mats that are useful in tissue engineering and filter applications. The overriding factor that has contributed to the popularity of this method is the ease with which fibers with submicron diameters can be produced. Fibers on that size scale are comparable to protein filaments that are observed in the extracellular matrix. The apparatus and procedures for conducting electrospinning experiments are ostensibly simple. While it is rarely reported in the literature on this topic, any experience with this method of fiber spinning reveals substantial ambiguities in how the process can be controlled to generate reproducible results. The simplicity of the procedure belies the complexity of the physical processes that determine the electrospinning process dynamics. In this article, three process domains and the physical domain of charge interaction are identified as important in electrospinning: (a) creation of charge carriers, (b) charge transport, (c) residual charge. The initial event that enables electrospinning is the generation of region of excess charge in the fluid that is to be electrospun. The electrostatic forces that develop on this region of charged fluid in the presence of a high potential result in the ejection of a fluid jet that solidifies into the resulting fiber. The transport of charge from the charge solution to the grounded collection device produces some of the current which is observed. That transport can occur by the fluid jet and through the atmosphere surrounding the electrospinning apparatus. Charges that are created in the fluid that are not dissipated remain in the solidified fiber as residual charges. The physics of each of these domains in the electrospinning process is summarized in terms of the current understanding, and possible sources of ambiguity in the implementation of this technique are indicated. Directions for future research to further articulate the behavior of the electrospinning process are suggested.

  13. Charge and spin transport in mesoscopic superconductors

    PubMed Central

    Wolf, M J; Hübler, F; Kolenda, S

    2014-01-01

    Summary Background: Non-equilibrium charge transport in superconductors has been investigated intensely in the 1970s and 1980s, mostly in the vicinity of the critical temperature. Much less attention has been paid to low temperatures and the role of the quasiparticle spin. Results: We report here on nonlocal transport in superconductor hybrid structures at very low temperatures. By comparing the nonlocal conductance obtained by using ferromagnetic and normal-metal detectors, we discriminate charge and spin degrees of freedom. We observe spin injection and long-range transport of pure, chargeless spin currents in the regime of large Zeeman splitting. We elucidate charge and spin transport by comparison to theoretical models. Conclusion: The observed long-range chargeless spin transport opens a new path to manipulate and utilize the quasiparticle spin in superconductor nanostructures. PMID:24605283

  14. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    SciTech Connect

    Wampler, William R.; Myers, Samuel M.

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  15. Measuring charge carrier mobility in photovoltaic devices with micron-scale resolution

    SciTech Connect

    Ashraf, A.; Dissanayake, D. M. N. M.; Eisaman, M. D.

    2015-03-16

    We present a charge-extraction technique, micron-scale charge extraction by linearly increasing voltage, which enables simultaneous spatially resolved measurements of charge carrier mobility and photocurrent in thin-film photovoltaic devices with micron-scale resolution. An intensity-modulated laser with beam diameter near the optical diffraction limit is scanned over the device, while a linear voltage ramp in reverse bias is applied at each position of illumination. We calculate the majority carrier mobility, photocurrent, and number of photogenerated charge carriers from the resulting current transient. We demonstrate this technique on an organic photovoltaic device, but it is applicable to a wide range of photovoltaic materials.

  16. Where are the charge carriers along a closed circuit? A relativistic description

    NASA Astrophysics Data System (ADS)

    Fautrat, Sylvain

    2016-03-01

    We present relativistic transformations of charge densities for a closed electric circuit consisting of straight sections of finite length wires. The study of charge carrier movement is made in the rest frame of carriers, and with only basic relativistic kinematics, we follow a group of charge carriers along the different segments of the circuit. From the change in inter-particle distances when moving from one wire segment to another, expressions for the charge densities are deduced. This approach aims to provide a deeper understanding of the relativistic motion of objects around a closed loop.

  17. Charge carrier dynamics in organic semiconductors and their donor-acceptor composites: Numerical modeling of time-resolved photocurrent

    NASA Astrophysics Data System (ADS)

    Johnson, Brian; Kendrick, Mark J.; Ostroverkhova, Oksana

    2013-09-01

    We present a model that describes nanosecond (ns) time-scale photocurrent dynamics in functionalized anthradithiophene (ADT) films and ADT-based donor-acceptor (D/A) composites. By fitting numerically simulated photocurrents to experimental data, we quantify contributions of multiple pathways of charge carrier photogeneration to the photocurrent, as well as extract parameters that characterize charge transport (CT) in organic films including charge carrier mobilities, trap densities, hole trap depth, and trapping and recombination rates. In pristine ADT films, simulations revealed two competing charge photogeneration pathways: fast, occurring on picosecond (ps) or sub-ps time scales with efficiencies below 10%, and slow, which proceeds at the time scale of tens of nanoseconds, with efficiencies of about 11%-12%, at the applied electric fields of 40-80 kV/cm. The relative contribution of these pathways to the photocurrent was electric field dependent, with the contribution of the fast process increasing with applied electric field. However, the total charge photogeneration efficiency was weakly electric field dependent exhibiting values of 14%-20% of the absorbed photons. The remaining 80%-86% of the photoexcitation did not contribute to charge carrier generation at these time scales. In ADT-based D/A composites with 2 wt.% acceptor concentration, an additional pathway of charge photogeneration that proceeds via CT exciton dissociation contributed to the total charge photogeneration. In the composite with the functionalized pentacene (Pn) acceptor, which exhibits strong exciplex emission from a tightly bound D/A CT exciton, the contribution of the CT state to charge generation was small, ˜8%-12% of the total number of photogenerated charge carriers, dependent on the electric field. In contrast, in the composite with PCBM acceptor, the CT state contributed about a half of all photogenerated charge carriers. In both D/A composites, the charge carrier mobilities were reduced and trap densities and average trap depths were increased, as compared to a pristine ADT donor film. A considerably slower recombination of free holes with trapped electrons was found in the composite with the PCBM acceptor, which led to slower decays of the transient photocurrent and considerably higher charge retention, as compared to a pristine ADT donor film and the composite with the functionalized Pn acceptor.

  18. Stacking dependence of carrier transport properties in multilayered black phosphorous

    NASA Astrophysics Data System (ADS)

    Sengupta, A.; Audiffred, M.; Heine, T.; Niehaus, T. A.

    2016-02-01

    We present the effect of different stacking orders on carrier transport properties of multi-layer black phosphorous. We consider three different stacking orders AAA, ABA and ACA, with increasing number of layers (from 2 to 6 layers). We employ a hierarchical approach in density functional theory (DFT), with structural simulations performed with generalized gradient approximation (GGA) and the bandstructure, carrier effective masses and optical properties evaluated with the meta-generalized gradient approximation (MGGA). The carrier transmission in the various black phosphorous sheets was carried out with the non-equilibrium green’s function (NEGF) approach. The results show that ACA stacking has the highest electron and hole transmission probabilities. The results show tunability for a wide range of band-gaps, carrier effective masses and transmission with a great promise for lattice engineering (stacking order and layers) in black phosphorous.

  19. Stacking dependence of carrier transport properties in multilayered black phosphorous.

    PubMed

    Sengupta, A; Audiffred, M; Heine, T; Niehaus, T A

    2016-02-24

    We present the effect of different stacking orders on carrier transport properties of multi-layer black phosphorous. We consider three different stacking orders AAA, ABA and ACA, with increasing number of layers (from 2 to 6 layers). We employ a hierarchical approach in density functional theory (DFT), with structural simulations performed with generalized gradient approximation (GGA) and the bandstructure, carrier effective masses and optical properties evaluated with the meta-generalized gradient approximation (MGGA). The carrier transmission in the various black phosphorous sheets was carried out with the non-equilibrium green's function (NEGF) approach. The results show that ACA stacking has the highest electron and hole transmission probabilities. The results show tunability for a wide range of band-gaps, carrier effective masses and transmission with a great promise for lattice engineering (stacking order and layers) in black phosphorous. PMID:26809017

  20. The nature of free-carrier transport in organometal halide perovskites

    NASA Astrophysics Data System (ADS)

    Hakamata, Tomoya; Shimamura, Kohei; Shimojo, Fuyuki; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2016-01-01

    Organometal halide perovskites are attracting great attention as promising material for solar cells because of their high power conversion efficiency. The high performance has been attributed to the existence of free charge carriers and their large diffusion lengths, but the nature of carrier transport at the atomistic level remains elusive. Here, nonadiabatic quantum molecular dynamics simulations elucidate the mechanisms underlying the excellent free-carrier transport in CH3NH3PbI3. Pb and I sublattices act as disjunct pathways for rapid and balanced transport of photoexcited electrons and holes, respectively, while minimizing efficiency-degrading charge recombination. On the other hand, CH3NH3 sublattice quickly screens out electrostatic electron-hole attraction to generate free carriers within 1 ps. Together this nano-architecture lets photoexcited electrons and holes dissociate instantaneously and travel far away to be harvested before dissipated as heat. This work provides much needed structure-property relationships and time-resolved information that potentially lead to rational design of efficient solar cells.

  1. The nature of free-carrier transport in organometal halide perovskites

    DOE PAGESBeta

    Hakamata, Tomoya; Shimamura, Kohei; Shimojo, Fuyuki; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2016-01-19

    Organometal halide perovskites are attracting great attention as promising material for solar cells because of their high power conversion efficiency. The high performance has been attributed to the existence of free charge carriers and their large diffusion lengths, but the nature of carrier transport at the atomistic level remains elusive. Here, nonadiabatic quantum molecular dynamics simulations elucidate the mechanisms underlying the excellent free-carrier transport in CH3NH3PbI3. Pb and I sublattices act as disjunct pathways for rapid and balanced transport of photoexcited electrons and holes, respectively, while minimizing efficiency-degrading charge recombination. On the other hand, CH3NH3 sublattice quickly screens out electrostaticmore » electron-hole attraction to generate free carriers within 1 ps. Together this nano-architecture lets photoexcited electrons and holes dissociate instantaneously and travel far away to be harvested before dissipated as heat. As a result, this work provides much needed structure-property relationships and time-resolved information that potentially lead to rational design of efficient solar cells.« less

  2. The nature of free-carrier transport in organometal halide perovskites

    PubMed Central

    Hakamata, Tomoya; Shimamura, Kohei; Shimojo, Fuyuki; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2016-01-01

    Organometal halide perovskites are attracting great attention as promising material for solar cells because of their high power conversion efficiency. The high performance has been attributed to the existence of free charge carriers and their large diffusion lengths, but the nature of carrier transport at the atomistic level remains elusive. Here, nonadiabatic quantum molecular dynamics simulations elucidate the mechanisms underlying the excellent free-carrier transport in CH3NH3PbI3. Pb and I sublattices act as disjunct pathways for rapid and balanced transport of photoexcited electrons and holes, respectively, while minimizing efficiency-degrading charge recombination. On the other hand, CH3NH3 sublattice quickly screens out electrostatic electron-hole attraction to generate free carriers within 1 ps. Together this nano-architecture lets photoexcited electrons and holes dissociate instantaneously and travel far away to be harvested before dissipated as heat. This work provides much needed structure-property relationships and time-resolved information that potentially lead to rational design of efficient solar cells. PMID:26781627

  3. The nature of free-carrier transport in organometal halide perovskites.

    PubMed

    Hakamata, Tomoya; Shimamura, Kohei; Shimojo, Fuyuki; Kalia, Rajiv K; Nakano, Aiichiro; Vashishta, Priya

    2016-01-01

    Organometal halide perovskites are attracting great attention as promising material for solar cells because of their high power conversion efficiency. The high performance has been attributed to the existence of free charge carriers and their large diffusion lengths, but the nature of carrier transport at the atomistic level remains elusive. Here, nonadiabatic quantum molecular dynamics simulations elucidate the mechanisms underlying the excellent free-carrier transport in CH3NH3PbI3. Pb and I sublattices act as disjunct pathways for rapid and balanced transport of photoexcited electrons and holes, respectively, while minimizing efficiency-degrading charge recombination. On the other hand, CH3NH3 sublattice quickly screens out electrostatic electron-hole attraction to generate free carriers within 1 ps. Together this nano-architecture lets photoexcited electrons and holes dissociate instantaneously and travel far away to be harvested before dissipated as heat. This work provides much needed structure-property relationships and time-resolved information that potentially lead to rational design of efficient solar cells. PMID:26781627

  4. Magnetoresistance and charge transport in graphene governed by nitrogen dopants.

    PubMed

    Rein, Markus; Richter, Nils; Parvez, Khaled; Feng, Xinliang; Sachdev, Hermann; Kläui, Mathias; Müllen, Klaus

    2015-02-24

    We identify the influence of nitrogen-doping on charge- and magnetotransport of single layer graphene by comparing doped and undoped samples. Both sample types are grown by chemical vapor deposition (CVD) and transferred in an identical process onto Si/SiO2 wafers. We characterize the samples by Raman spectroscopy as well as by variable temperature magnetotransport measurements. Over the entire temperature range, the charge transport properties of all undoped samples are in line with literature values. The nitrogen doping instead leads to a 6-fold increase in the charge carrier concentration up to 4 × 10(13) cm(-2) at room temperature, indicating highly effective doping. Additionally it results in the opening of a charge transport gap as revealed by the temperature dependence of the resistance. The magnetotransport exhibits a conspicuous sign change from positive Lorentz magnetoresistance (MR) in undoped to large negative MR that we can attribute to the doping induced disorder. At low magnetic fields, we use quantum transport signals to quantify the transport properties. Analyses based on weak localization models allow us to determine an orders of magnitude decrease in the phase coherence and scattering times for doped samples, since the dopants act as effective scattering centers. PMID:25548883

  5. Interfacial Study To Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells.

    PubMed

    Adhikari, Nirmal; Dubey, Ashish; Khatiwada, Devendra; Mitul, Abu Farzan; Wang, Qi; Venkatesan, Swaminathan; Iefanova, Anastasiia; Zai, Jiantao; Qian, Xuefeng; Kumar, Mukesh; Qiao, Qiquan

    2015-12-01

    We report effects of an interface between TiO2-perovskite and grain-grain boundaries of perovskite films prepared by single step and sequential deposited technique using different annealing times at optimum temperature. Nanoscale kelvin probe force microscopy (KPFM) measurement shows that charge transport in a perovskite solar cell critically depends upon the annealing conditions. The KPFM results of single step and sequential deposited films show that the increase in potential barrier suppresses the back-recombination between electrons in TiO2 and holes in perovskite. Spatial mapping of the surface potential within perovskite film exhibits higher positive potential at grain boundaries compared to the surface of the grains. The average grain boundary potential of 300-400 mV is obtained upon annealing for sequentially deposited films. X-ray diffraction (XRD) spectra indicate the formation of a PbI2 phase upon annealing which suppresses the recombination. Transient analysis exhibits that the optimum device has higher carrier lifetime and short carrier transport time among all devices. An optimum grain boundary potential and proper band alignment between the TiO2 electron transport layer (ETL) and the perovskite absorber layer help to increase the overall device performance. PMID:26579732

  6. Charged Particle Transport in Anisotropic Magnetic Turbulence

    NASA Astrophysics Data System (ADS)

    Sun, P.; Jokipii, J. R.

    2011-12-01

    Turbulence with an irregular magnetic field is common in the astrophysical environment. Charged particles drift and diffuse in inhomogeneous magnetic fields. The transport is both parallel and perpendicular to the mean magnetic field. It is believed that the characteristics of the turbulent magnetic field will affect the transport of the charged particles. A number of different magnetic turbulence models have been proposed for this study. An anisotropic (Goldreich & Sridhar 1995), Kolmogorov type, magneto-hydrodynamic turbulence is constructed and compared with the standard isotropic model. And the transport coefficients of energetic particles are calculated and analyzed by test particle simulations in the constructed turbulence.

  7. Understanding the dependence of transport parameters on carrier concentration within a Gaussian density of states in molecular organic semiconductors.

    PubMed

    Sharma, A; Kumar, P; Rani, V; Ray, N; Ghosh, S

    2016-06-15

    We study charge transport in molecular organic semiconductors using two terminal and three terminal field effect transistor devices. Using phthalocyanines as examples, we achieve unification of carrier mobility between the different configurations in a Gaussian density of states. We find that the current density-voltage characteristics for two terminal devices can be understood by introducing a concentration dependence of the carrier mobility, as described by Oelerich et al (2012 Phys. Rev. Lett. 108 226403, 2010 Appl. Phys. Lett. 97 143302). Studying the evolution of the activation energy with the carrier density, we find results consistent with a percolation picture and a density dependent transport energy. PMID:27160656

  8. Small neutral molecular carriers for selective carboxylate transport.

    PubMed

    Haynes, Cally J E; Berry, Stuart N; Garric, Joachim; Herniman, Julie; Hiscock, Jennifer R; Kirby, Isabelle L; Light, Mark E; Perkes, Gregory; Gale, Philip A

    2013-01-11

    A series of neutral thiourea receptors were found to mediate the antiport of chloride with a range of biologically relevant carboxylate anions across phospholipid bilayers. Simple structural modification of the carriers resulted in a change in the lactate/pyruvate transport selectivity. PMID:23175428

  9. Airline Transport Pilot-Airplane (Air Carrier) Written Test Guide.

    ERIC Educational Resources Information Center

    Federal Aviation Administration (DOT), Washington, DC. Flight Standards Service.

    Presented is information useful to applicants who are preparing for the Airline Transport Pilot-Airplane (Air Carrier) Written Test. The guide describes the basic aeronautical knowledge and associated requirements for certification, as well as information on source material, instructions for taking the official test, and questions that are…

  10. Disrupted Attosecond Charge Carrier Delocalization at a Hybrid Organic/Inorganic Semiconductor Interface.

    PubMed

    Racke, David A; Kelly, Leah L; Kim, Hyungchul; Schulz, Philip; Sigdel, Ajaya; Berry, Joseph J; Graham, Samuel; Nordlund, Dennis; Monti, Oliver L A

    2015-05-21

    Despite significant interest in hybrid organic/inorganic semiconductor interfaces, little is known regarding the fate of charge carriers at metal oxide interfaces, particularly on ultrafast time scales. Using core-hole clock spectroscopy, we investigate the ultrafast charge carrier dynamics of conductive ZnO films at a hybrid interface with an organic semiconductor. The adsorption of C60 on the ZnO surface strongly suppresses the ultrafast carrier delocalization and increases the charge carrier residence time from 400 attoseconds to nearly 30 fs. Here, we show that a new hybridized interfacial density of states with substantial molecular character is formed, fundamentally altering the observed carrier dynamics. The remarkable change in the dynamics sheds light on the fate of carriers at hybrid organic/inorganic semiconductor interfaces relevant to organic optoelectronics and provides for the first time an atomistic picture of the electronically perturbed near-interface region of a metal oxide. PMID:26263273

  11. Temperature dependence of charge carrier generation in organic photovoltaics.

    PubMed

    Gao, Feng; Tress, Wolfgang; Wang, Jianpu; Inganäs, Olle

    2015-03-27

    The charge generation mechanism in organic photovoltaics is a fundamental yet heavily debated issue. All the generated charges recombine at the open-circuit voltage (V_{OC}), so that investigation of recombined charges at V_{OC} provides a unique approach to understanding charge generation. At low temperatures, we observe a decrease of V_{OC}, which is attributed to reduced charge separation. Comparison between benchmark polymer:fullerene and polymer:polymer blends highlights the critical role of charge delocalization in charge separation and emphasizes the importance of entropy in charge generation. PMID:25860774

  12. Carrier Transport and Related Effects in Detectors of the Cryogenic Dark Matter Search

    NASA Astrophysics Data System (ADS)

    Sundqvist, Kyle Michael

    The Cryogenic Dark Matter Search (CDMS) is searching for weakly-interacting massive particles (WIMPS), which could explain the dark matter problem in cosmology and particle physics. By simultaneously measuring signals from deposited charge and the energy in non-equilibrium phonons created by particle interactions in intrinsic germanium crystals at a temperature of 40 mK, a signature response for each event is produced. This response, combined with phonon pulse-shape information, allows CDMS to actively discriminate candidate WIMP interactions with nuclei from electromagnetic radioactive background which interacts with electrons. The challenges associated with these techniques are unique. Carrier scattering is dominated by the spontaneous emission of Luke-Neganov phonons due to zero-point fluctuations of the lattice ions. Drift fields are maintained at only a few V/cm, else these emitted phonons would dominate the phonons of the original interaction. The dominant systematic issues with CDMS detectors are due to the effects of space charge accumulation. It has been an open question how space charge accrues, and by which of several potential recombination and ionization processes. In this work, we have simulated the transport of electrons and holes in germanium under CDMS conditions. We have implemented both a traditional Monte Carlo technique based on carrier energy, followed later by a novel Monte Carlo algorithm with scattering rates defined and sampled by vector momentum. This vector-based method provides for a full anisotropic simulation of carrier transport including free-flight acceleration with an anisotropic mass, and anisotropic scattering rates. With knowledge of steady state carrier dynamics as a function of applied field, the results of our Monte Carlo simulations allow us to make a wide variety of predictions for energy dependent processes for both electrons and holes. Such processes include carrier capture by charged impurities, neutral impurities, static dipoles, and capture forming “anion” ( D-/A+) states. We also generate predictions for impact ionization of shallow impurities and of impact “neutralization” of D- /A+ states. We use measurements of carrier capture performed on CDMS detectors to validate a plausible model for electron and hole capture due to neutral shallow impurities and their charged D-/A + states. This model, along with carrier drift and diffusion parameters from Monte Carlo simulation, can be used as the foundation for simulations of space charge evolution in CDMS detectors, simultaneously solving continuity equations with Poisson's equation.

  13. Carrier transport in dichromatic color-coded semipolar (2021) and (2021) III-N LEDs

    NASA Astrophysics Data System (ADS)

    Kisin, Mikhail V.; Huang, Chih-Li; El-Ghoroury, Hussein S.

    2014-03-01

    Simulation of III-nitride color-coded multiple quantum well (MQW) LED structures was performed using as an experimental benchmark dichromatic semipolar LEDs grown in Ga-polar and N-polar crystallographic orientations (Y. Kawaguchi et.al, APL 100, 231110, 2012). Different QW depths in the color-coded LEDs and opposite interface polarization charges in Ga-polar and N-polar structures provide different conditions for carrier transport across the LED active regions. Combination of several effects was crucial for adequate reproduction of the emission spectra experimentally observed in color-coded structures with violet-aquamarine and aquamarine-violet active region layouts. A standard drift-diffusion transport model wascompleted with rate equations for nonequilibrium QW populations and several high-energy transport features, including the effects of QW carrier overshoot and Auger-assisted QW depopulation. COMSOL-based Optoelectronic Device Modeling Software (ODMS) developed at Ostendo Technologies Inc. was utilized for device simulation.

  14. Detection of chemically induced hot charge carriers with ultrathin metal film Schottky contacts

    NASA Astrophysics Data System (ADS)

    Nienhaus, H.; Gergen, B.; Weinberg, W. H.; McFarland, E. W.

    2002-08-01

    Energy dissipation during chemical reactions at metal surfaces may excite electron-hole pairs in the metal. Direct detection of such reaction-induced hot electrons and holes is feasible using solid state barrier devices like Schottky diodes with ultrathin metal films. While exposing the diodes to reactive gases, a chemicurrent is observed in the diodes. The concept of hot charge carrier detection by chemicurrent measurements and the dependence of the current strength on device properties are discussed in detail. Data recorded from thin film Cu/n-Si(1 1 1) and Ag/n-Si(1 1 1) diodes exposed to atomic hydrogen and atomic oxygen are presented. The current detection sensitivity is improved by a factor of 10 if the metal films are annealed to room temperature after low-temperature deposition. This annealing effect is related to a reduced scattering of hot electrons in the metal. Chemicurrents are attenuated exponentially with increasing metal film thickness. Attenuation lengths between 6 and 11 nm are observed. They are much smaller than attenuation lengths for photo- and internal photoemission currents. The results demonstrate that chemicurrents are due to hot charge carrier excitation and transport and are not attributed to surface chemiluminescence and photon reabsorption in the device.

  15. Electron spin resonance observation of charge carrier concentration in organic field-effect transistors during device operation

    NASA Astrophysics Data System (ADS)

    Tanaka, Hisaaki; Hirate, Masataka; Watanabe, Shun-ichiro; Kaneko, Kazuaki; Marumoto, Kazuhiro; Takenobu, Taishi; Iwasa, Yoshihiro; Kuroda, Shin-ichi

    2013-01-01

    Charge carrier concentration in operating organic field-effect transistors (OFETs) reflects the electric potential within the channel, acting as a key quantity to clarify the operation mechanism of the device. Here, we demonstrate a direct determination of charge carrier concentration in the operating devices of pentacene and poly(3-hexylthiophene) (P3HT) by field-induced electron spin resonance (FI-ESR) spectroscopy. This method sensitively detects polarons induced by applying gate voltage, giving a clear FI-ESR signal around g=2.003 in both devices. Upon applying drain-source voltage, carrier concentration decreases monotonically in the FET linear region, reaching about 70% of the initial value at the pinch-off point, and stayed constant in the saturation region. The observed results are reproduced well from the theoretical potential profile based on the gradual channel model. In particular, the carrier concentration at the pinch-off point is calculated to be ?/(?+1) of the initial value, where ? is the power exponent in the gate voltage (Vgs) dependence of the mobility (?), expressed as ??Vgs?-2, providing detailed information of charge transport. The present devices show ?=2.6 for the pentacene and ?=2.3 for the P3HT cases, consistent with those determined by transfer characteristics. The gate voltage dependence of the mobility, originating from the charge trapping at the device interface, is confirmed microscopically by the motional narrowing of the FI-ESR spectra.

  16. Conditions for charge transport without recombination in low mobility organic solar cells and photodiodes (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Stolterfoht, Martin; Armin, Ardalan; Philippa, Bronson; White, Ronald D.; Burn, Paul L.; Meredith, Paul; Juška, Gytis; Pivrikas, Almantas

    2015-10-01

    Organic semiconductors typically possess low charge carrier mobilities and Langevin-type recombination dynamics, which both negatively impact the performance of organic solar cells and photodetectors. Charge transport in organic solar cells is usually characterized by the mobility-lifetime product. Using newly developed transient and steady state photocurrent measurement techniques we show that the onset of efficiency limiting photocarrier recombination is determined by the charge that can be stored on the electrodes of the device. It is shown that significant photocarrier recombination can be avoided when the total charge inside the device, defined by the trapped, doping-induced and mobile charge carriers, is less than the electrode charge. Based upon this physics we propose the mobility-recombination coefficient product as an alternative and more convenient figure of merit to minimize the recombination losses. We validate the results in 3 different organic semiconductor-based light harvesting systems with very different charge transport properties. The findings allow the determination of the charge collection efficiency in fully operational devices. In turn, knowing the conditions under which non-geminate recombination is eliminated enables one to quantify the generation efficiency of free charge carriers. The results are relevant to a wide range of light harvesting systems, particularly those based upon disordered semiconductors, and require a rethink of the critical parameters for charge transport.

  17. Influence of Lifshitz transitions and correlation effects on the scattering rates of the charge carriers in iron-based superconductors

    NASA Astrophysics Data System (ADS)

    Fink, J.

    2016-01-01

    Minimum model calculations on the co-action of hole vanishing Lifshitz transitions and correlation effects in ferropnictides are presented. The calculations predict non-Fermi-liquid behaviour and huge mass enhancements of the charge carriers at the Fermi level. The findings are compared with recent ARPES experiments and with measurements of transport and thermal properties of ferropnictides. The results from the calculation can be also applied to other unconventional superconductors and question the traditional view of quantum-critical points.

  18. Nanocone Tip-Film Solar Cells with Efficient Charge Transport

    SciTech Connect

    Lee, Sang Hyun; Zhang, Xiaoguang; Parish, Chad M; Smith, Barton; Xu, Jun; Lee, Ho Nyung

    2011-01-01

    Nanojunctions promise to provide higher charge transport efficiencies and less costly solar cell fabrication methods. We report a three-dimensional (3D) solar cell structure based on interdigitated nanojunctions formed with the tips of n-type ZnO nanocones embedded in a p-type polycrystalline (PX) CdTe film. This 3D nanocone tip-film cell, without optimization, enabled 3.2% power conversion efficiency, higher than that produced by a planar solar cell fabricated using the same materials. Reducing CdTe grain size and enriching the grain boundaries with chlorine improved the conversion efficiency for the tip-film structure. This higher conversion efficiency is attributable to improved charge transport in the nanojunction due to a combination of the high electric field generated in the CdTe and the utilization of the small junction area. The high field facilitates the extraction of minority carriers from the photoactive layer to the small junction region, while the use of the small junction area reduces the total electron recombination loss. The improved carrier transport in the nanocone tip-film junction implies that nanocone-based photovoltaic solar cells are capable of tolerating the imperfect materials produced using low-cost fabrication methods.

  19. Symposium GC: Nanoscale Charge Transport in Excitonic Solar Cells

    SciTech Connect

    Bommisetty, Venkat

    2011-06-23

    This paper provides a summary only and table of contents of the sessions. Excitonic solar cells, including all-organic, hybrid organic-inorganic and dye-sensitized solar cells (DSSCs), offer strong potential for inexpensive and large-area solar energy conversion. Unlike traditional inorganic semiconductor solar cells, where all the charge generation and collection processes are well understood, these excitonic solar cells contain extremely disordered structures with complex interfaces which results in large variations in nanoscale electronic properties and has a strong influence on carrier generation, transport, dissociation and collection. Detailed understanding of these processes is important for fabrication of highly efficient solar cells. Efforts to improve efficiency are underway at a large number of research groups throughout the world focused on inorganic and organic semiconductors, photonics, photophysics, charge transport, nanoscience, ultrafast spectroscopy, photonics, semiconductor processing, device physics, device structures, interface structure etc. Rapid progress in this multidisciplinary area requires strong synergetic efforts among researchers from diverse backgrounds. Such effort can lead to novel methods for development of new materials with improved photon harvesting and interfacial treatments for improved carrier transport, process optimization to yield ordered nanoscale morphologies with well defined electronic structures.

  20. Time-resolved measurements of charge carrier dynamics and optical nonlinearities in narrow-bandgap semiconductors

    NASA Astrophysics Data System (ADS)

    Olson, Benjamin Varberg

    All-optical time-resolved measurement techniques provide a powerful tool for investigating critical parameters that determine the performance of infrared photodetector and emitter semiconductor materials. Narrow-bandgap InAs/GaSb type-II superlattices (T2SLs) have shown great promise as a next generation source of these materials, due to superior intrinsic properties and versatility. Unfortunately, InAs/GaSb T2SLs are plagued by parasitic Shockley-Read-Hall recombination centers that shorten the carrier lifetime and limit device performance. Ultrafast pump-probe techniques and time-resolved differential transmission measurements are used here to demonstrate that Ga-free InAs/InAsSb T2SLs and InAsSb alloys do not have this same limitation and thus have significantly longer carrier lifetimes. Measurements at 77 K provided minority carrier lifetimes of 9 mus and 3 mus for an unintentionally doped mid-wave infrared (MWIR) InAs/InAsSb T2SL and InAsSb alloy, respectively; a two order of magnitude increase compared to the 90 ns minority carrier lifetime measured in a comparable MWIR InAs/GaSb T2SL. Through temperature-dependent lifetime measurements, the various carrier recombination processes are differentiated and the dominant mechanisms identified for each material. These results demonstrate that these Ga-free materials are viable options over InAs/GaSb T2SLs for potentially improved infrared photodetectors. In addition to carrier lifetimes, the drift and diffusion of excited charge carriers through the superlattice growth layers (i.e. vertical transport) directly affects the performance of photodetectors and emitters. Unfortunately, there is a lack of information pertaining to vertical transport, primarily due to difficulties in making measurements on thin growth layers and the need for non-standard measurement techniques. However, all-optical ultrafast techniques are successfully used here to directly measure vertical diffusion in MWIR InAs/GaSb T2SLs. By optically generating excess carriers near one end of a MWIR T2SL and measuring the transit time to a thin, 2 lower-bandgap superlattice placed at the other end, the time-of-flight of vertically diffusing carriers is determined. Through investigation of both unintentionally doped and p-type superlattices at 77 K, the vertical hole and electron diffusion coefficients are determined to be 0.04+/-0.03 cm2/s and 4.7+/-0.5 cm2/s, corresponding to vertical mobilities of 6+/-5 cm 2/Vs and 700+/-80 cm2/Vs, respectively. These measurements are, to my knowledge, the first direct measurements of vertical transport properties in narrow-bandgap superlattices. Lastly, the widely tunable two-color ultrafast laser system used in this research allowed for the investigation of nonlinear optical properties in narrow-bandgap semiconductors. Time-resolved measurements taken at 77 K of the nondegenerate two-photon absorption spectrum of bulk n-type GaSb have provided new information about the nonresonant change in absorption and two-photon absorption coefficients in this material. Furthermore, as the nondegenerate spectrum was measured over a wide range of optical frequencies, a Kramers-Kronig transformation allowed the dispersion of the nondegenerate nonlinear refractive index to be calculated.

  1. Light-emitting quantum dot transistors: emission at high charge carrier densities.

    PubMed

    Schornbaum, Julia; Zakharko, Yuriy; Held, Martin; Thiemann, Stefan; Gannott, Florentina; Zaumseil, Jana

    2015-03-11

    For the application of colloidal semiconductor quantum dots in optoelectronic devices, for example, solar cells and light-emitting diodes, it is crucial to understand and control their charge transport and recombination dynamics at high carrier densities. Both can be studied in ambipolar, light-emitting field-effect transistors (LEFETs). Here, we report the first quantum dot light-emitting transistor. Electrolyte-gated PbS quantum dot LEFETs exhibit near-infrared electroluminescence from a confined region within the channel, which proves true ambipolar transport in ligand-exchanged quantum dot solids. Unexpectedly, the external quantum efficiencies improve significantly with current density. This effect correlates with the unusual increase of photoluminescence quantum yield and longer average lifetimes at higher electron and hole concentrations in PbS quantum dot thin films. We attribute the initially low emission efficiencies to nonradiative losses through trap states. At higher carrier densities, these trap states are deactivated and emission is dominated by trions. PMID:25652433

  2. Light-Emitting Quantum Dot Transistors: Emission at High Charge Carrier Densities

    PubMed Central

    2015-01-01

    For the application of colloidal semiconductor quantum dots in optoelectronic devices, for example, solar cells and light-emitting diodes, it is crucial to understand and control their charge transport and recombination dynamics at high carrier densities. Both can be studied in ambipolar, light-emitting field-effect transistors (LEFETs). Here, we report the first quantum dot light-emitting transistor. Electrolyte-gated PbS quantum dot LEFETs exhibit near-infrared electroluminescence from a confined region within the channel, which proves true ambipolar transport in ligand-exchanged quantum dot solids. Unexpectedly, the external quantum efficiencies improve significantly with current density. This effect correlates with the unusual increase of photoluminescence quantum yield and longer average lifetimes at higher electron and hole concentrations in PbS quantum dot thin films. We attribute the initially low emission efficiencies to nonradiative losses through trap states. At higher carrier densities, these trap states are deactivated and emission is dominated by trions. PMID:25652433

  3. Ultrafast charge carrier relaxation and charge transfer processes in CdS/CdTe thin films.

    PubMed

    Pandit, Bill; Dharmadasa, Ruvini; Dharmadasa, I M; Druffel, Thad; Liu, Jinjun

    2015-07-14

    Ultrafast transient absorption pump-probe spectroscopy (TAPPS) has been employed to investigate charge carrier relaxation in cadmium sulfide/cadmium telluride (CdS/CdTe) nanoparticle (NP)-based thin films and electron transfer (ET) processes between CdTe and CdS. Effects of post-growth annealing treatments to ET processes have been investigated by carrying out TAPPS experiments on three CdS/CdTe samples: as deposited, heat treated, and CdCl2 treated. Clear evidence of ET process in the treated thin films has been observed by comparing transient absorption (TA) spectra of CdS/CdTe thin films to those of CdS and CdTe. Quantitative comparison between ultrafast kinetics at different probe wavelengths unravels the ET processes and enables determination of its rate constants. Implication of the photoinduced dynamics to photovoltaic devices is discussed. PMID:26033446

  4. Minority-charge-carrier mobility at low injection level in semiconductors

    SciTech Connect

    Pomortseva, L. I.

    2011-04-15

    From the kinetic equations, the distribution functions for majority and minority charge carriers are obtained at a low injection level. For describing the electron-hole collisions, the Landau collision integral is used. The carrier scattering at ionized or neutral impurity and at acoustic phonons is taken into account. The majority-carrier distribution function is presented in the analytical form. The minority-carrier mobility is calculated and analyzed, and the features of its behavior at low temperatures are revealed. It follows from the developed theory that the hole mobility in an n-type material increases with doping and neutral-impurity concentration. This effect is attributed to mutual charge-carrier collisions and different effective masses of different-sign carriers.

  5. Excited carrier dynamics and transport in plasmonic nanostructures

    NASA Astrophysics Data System (ADS)

    Sundararaman, Ravishankar; Narang, Prineha; Jermyn, Adam; Atwater, Harry; Goddard, William, III

    Surface plasmon resonances provide a pathway to efficiently capture electromagnetic radiation in sub-wavelength structures for energy conversion and photodetection at the nano scale. The complete mechanism involves several microscopic steps spanning length scales from atomic dimensions to tens or hundreds of nanometers, posing challenges for experimental characterization and for first-principles predictions. To provide the basis for predicting and optimizing the complex interplay of materials and geometric effects in plasmon decay-induced excited carrier phenomena, we combined ab initio electronic structure calculations, electromagnetic simulations and Boltzmann transport models. In Au, Ag, Cu and Al nanostructures, we find that initial carrier distributions as well as their subsequent transport, relaxation and thermalization are sensitive to electronic structure, exhibiting strong asymmetries between electrons and holes. We predict energy-dependent spatially-resolved carrier distributions collected in plasmonic nanostructures with strong field inhomogeneities, and explore the possibility of tailoring materials and geometry to collect the carrier distributions needed for such applications as photochemically driven CO2 reduction and water splitting. This material is based upon work performed by JCAP, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award Number DE-SC0004993.

  6. 47 CFR 69.154 - Per-minute carrier common line charge.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... weighting method set forth in paragraph (c) of this section. The maximum such charge shall be the lower of... the weighting method set forth in paragraph (c) of this section. (c) For each Carrier Common...

  7. 47 CFR 69.154 - Per-minute carrier common line charge.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... weighting method set forth in paragraph (c) of this section. The maximum such charge shall be the lower of... the weighting method set forth in paragraph (c) of this section. (c) For each Carrier Common...

  8. 47 CFR 69.154 - Per-minute carrier common line charge.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... weighting method set forth in paragraph (c) of this section. The maximum such charge shall be the lower of... the weighting method set forth in paragraph (c) of this section. (c) For each Carrier Common...

  9. 47 CFR 69.154 - Per-minute carrier common line charge.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... weighting method set forth in paragraph (c) of this section. The maximum such charge shall be the lower of... the weighting method set forth in paragraph (c) of this section. (c) For each Carrier Common...

  10. 47 CFR 69.154 - Per-minute carrier common line charge.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... weighting method set forth in paragraph (c) of this section. The maximum such charge shall be the lower of... the weighting method set forth in paragraph (c) of this section. (c) For each Carrier Common...

  11. Temperature dependence of exciton and charge carrier dynamics in organic thin films

    NASA Astrophysics Data System (ADS)

    Platt, A. D.; Kendrick, M. J.; Loth, M.; Anthony, J. E.; Ostroverkhova, O.

    2011-12-01

    We report on physical mechanisms behind the temperature-dependent optical absorption, photoluminescence (PL), and photoconductivity in spin-coated films of a functionalized anthradithiophene (ADT) derivative, ADT-triethylsilylethynyl (TES)-F, and its composites with C60 and another ADT derivative, ADT-TIPS-CN. Measurements of absorption and PL spectra, PL lifetimes, and transient photocurrent were performed at temperatures between 98 and 300 K as a function of applied electric field. In pristine ADT-TES-F films, absorptive and emissive species were identified to be disordered H aggregates whose properties are affected by static and dynamic disorder. The exciton bandwidths were ≤0.06 and ˜0.115 eV for absorptive and emissive aggregates, respectively, indicative of higher disorder in the emissive species. The exciton in the latter was found to be delocalized over approximately four to five molecules. The PL properties were significantly modified upon adding a guest molecule to the ADT-TES-F host. In ADT-TES-F/C60 composites, the PL was considerably quenched due to photoinduced electron transfer from ADT-TES-F to C60, while in ADT-TES-F/ADT-TIPS-CN blends, the PL was dominated by emission from an exciplex formed between ADT-TES-F and ADT-TIPS-CN molecules. In all materials, the PL quantum yield dramatically decreased as the temperature increased due to thermally activated nonradiative recombination. Considerable electric-field-induced PL quenching was observed at low temperatures at electric fields above ˜105 V/cm due to tunneling into dark states. No significant contribution of ADT-TES-F emissive exciton dissociation to transient photocurrent was observed. In all materials, charge carriers were photogenerated at sub-500-ps time scales, limited by the laser pulse width, with temperature- and electric-field-independent photogeneration efficiency. In ADT-TES-F/C60 (2%) composites, the photogeneration efficiency was a factor of 2-3 higher than that in pristine ADT-TES-F films. In ADT-TES-F/ADT-TIPS-CN (2%) blends, an additional charge carrier photogeneration component was observed at room temperature at time scales of ˜20 ns due to exciplex dissociation. At ˜0.5-5 ns after photoexcitation, the carriers propagated via thermally and electric-field-activated hopping with an activation energy of ˜0.025 eV. At time scales longer than ˜5 ns, charge transport of carriers that are not frozen in traps proceeded through tunneling via isoenergetic sites.

  12. 75 FR 18255 - Passenger Facility Charge Database System for Air Carrier Reporting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-09

    ... interested parties of the availability of the Passenger Facility Charge (PFC) database system to report PFC... PFCs must provide quarterly PFC reports to air carriers collecting PFCs for the public agency and the FAA. In accordance with Sec. 158.65, each air carrier collecting PFCs for a public agency must...

  13. Impact of Carrier Transport on Aquamarine-Green Laser Performance

    NASA Astrophysics Data System (ADS)

    Sizov, Dmitry S.; Bhat, Rajaram; Zakharian, Aramais; Napierala, Jerome; Song, Kechang; Allen, Donald; Zah, Chung-en

    2010-12-01

    We studied the carrier transport phenomena of the multiple-quantum-well (MQW) active region and their impact on the performance of aquamarine and green laser diodes (LDs) grown on polar and semipolar planes. The ballistic carrier transport mechanism was found to be dominant in the MQW region. For the c-plane, because of the high hole capture probability and slow escape rate, mainly the quantum wells (QWs) positioned close to the p-side are electrically pumped. The optical loss induced by the underpumped QWs further away from the p-side leads to significantly higher laser threshold current density and a longer lasing wavelength with increased number of QWs. These effects are not significant for semipolar LD structures.

  14. Temperature-dependent effects of cholesterol on sodium transport through lipid membranes by an ionizable mobile carrier.

    PubMed

    Wehrli, S; Ramirez, C; Kraus, J L; Castaing, M

    1992-06-30

    Temperature-jump relaxation experiments on Na+ transport by (221)C10-cryptand were carried out in order to study the influence of cholesterol and its temperature-dependence on ion transport through thin lipid membranes. The experiments were performed on large, negatively charged unilamellar vesicles (LUV) prepared from mixtures of dioleoylphosphatidylcholine, phosphatidic acid and cholesterol (mole fractions 0-0.43), at various temperatures and carrier concentrations. The initial rates of Na+ transport and the apparent rate constants of its translocation by (221)C10 increased with the carrier concentration and the temperature. The incorporation of cholesterol into the membranes significantly reduced the carrier concentration- and temperature-dependence of these two parameters. The apparent energy required to activate the transport decreased significantly with increasing carrier concentrations at any given cholesterol molar fraction, and increased significantly with the cholesterol molar fraction at any given carrier concentration. Our interpretation of the action of cholesterol on this transport system is based on the assumption that the binding cavity of cryptands is likely to be located towards the aqueous side of the dipole layer. The results are discussed in terms of the structural, physico-chemical and electrical characteristics of carriers and complexes, and of the interactions occurring between an ionizable mobile carrier and the membrane. PMID:1504075

  15. 25th anniversary article: charge transport and recombination in polymer light-emitting diodes.

    PubMed

    Kuik, Martijn; Wetzelaer, Gert-Jan A H; Nicolai, Herman T; Craciun, N Irina; De Leeuw, Dago M; Blom, Paul W M

    2014-01-01

    This article reviews the basic physical processes of charge transport and recombination in organic semiconductors. As a workhorse, LEDs based on a single layer of poly(p-phenylene vinylene) (PPV) derivatives are used. The hole transport in these PPV derivatives is governed by trap-free space-charge-limited conduction, with the mobility depending on the electric field and charge-carrier density. These dependencies are generally described in the framework of hopping transport in a Gaussian density of states distribution. The electron transport on the other hand is orders of magnitude lower than the hole transport. The reason is that electron transport is hindered by the presence of a universal electron trap, located at 3.6 eV below vacuum with a typical density of ca. 3 × 10¹⁷ cm⁻³. The trapped electrons recombine with free holes via a non-radiative trap-assisted recombination process, which is a competing loss process with respect to the emissive bimolecular Langevin recombination. The trap-assisted recombination in disordered organic semiconductors is governed by the diffusion of the free carrier (hole) towards the trapped carrier (electron), similar to the Langevin recombination of free carriers where both carriers are mobile. As a result, with the charge-carrier mobilities and amount of trapping centers known from charge-transport measurements, the radiative recombination as well as loss processes in disordered organic semiconductors can be fully predicted. Evidently, future work should focus on the identification and removing of electron traps. This will not only eliminate the non-radiative trap-assisted recombination, but, in addition, will shift the recombination zone towards the center of the device, leading to an efficiency improvement of more than a factor of two in single-layer polymer LEDs. PMID:24458577

  16. CLASSIFICATION OF THE MGR CARRIER/CASK TRANSPORT SYSTEM

    SciTech Connect

    S.E. Salzman

    1999-08-30

    The purpose of this analysis is to document the Quality Assurance (QA) classification of the Monitored Geologic Repository (MGR) carrier/cask transport system structures, systems and components (SSCs) performed by the MGR Safety Assurance Department. This analysis also provides the basis for revision of YMP/90-55Q, Q-List (YMP 1998). The Q-List identifies those MGR SSCs subject to the requirements of DOE/RW-0333P, ''Quality Assurance Requirements and Description'' (QARD) (DOE 1998).

  17. Molecular Level Manipulation of Interfacial Charge Transport

    NASA Astrophysics Data System (ADS)

    Song, Charles Kiseok

    The bulk-heterojunction organic (BHJ) photovoltaics (OPVs) and lithium ion battery (LiB) have been extensively studied. Power conversion efficiency (PCE) of an OPV greater than 10% and utilizing group 4 elements as the anode to accommodate high capacity for LiBs are the goals of many studies. However, the currently ubiquitous hole-collecting layer of OPVs limit device performance and durability, and group 4 elements are unstable and brittle to be commercially produced. Thus, my thesis has focused on developing functional and durable interfacial layers (IFLs) for OPVs and characterizing flexible artificial solid-electrolyte interphase (SEI) for LiBs. In Chapter 2, a series of robust organosilane-based dipolar self-assembled monolayer (SAM) IFLs on the tin-doped indium oxide (ITO) anodes of OPVs are developed. These hydrophobic and amorphous IFLs modify anode work functions from 4.66 to 5.27 eV. Two series of Glass/ITO/SAM IFL/Active Layer/LiF/Al BHJ OPVs are fabricated, and a strong positive correlation between the electrochemically-derived heterogeneous electron transport rate constants (ks) and OPV PCEs are observed due to enhanced anode carrier extraction. In Chapter 3, a series of unusually denser organosilane-based SAM IFLs on ITO anodes of OPVs are developed. Precursor mixtures having short and long tail groups were simultaneously deposited to minimize sterical encumbrance and denser SAM IFLs are achieved. These heterogeneous supersaturated SAMs (SHSAMs), with PCE (7.62%) exceeding that of PEDOT:PSS IFL, are found to be 17% denser and enhances PCE by 54% versus comparable devices with homogeneous SAM IFLs due to enhanced charge selectivity and collection. In Chapter 4, libraries of electron affinities (EAs) of widely used conductive polymers are constructed by cyclic voltammetry (CV) in conventional and LiB media. The EAs of the conductive polymer films measured via CV in conventional (EAC) and Li+ battery (EAB) media could be linearly correlated by EAB = (1.07 +/- 0.13) x EAC + (2.84 +/- 0.22)V. The slope and the intercept are correlated to the dielectric constants encompassing the polymer film and the redox potential of the reference electrode affected by the surrounding electrolyte, respectively.

  18. Understanding Charge Transport in Mixed Networks of Semiconducting Carbon Nanotubes.

    PubMed

    Rother, Marcel; Schießl, Stefan P; Zakharko, Yuriy; Gannott, Florentina; Zaumseil, Jana

    2016-03-01

    The ability to select and enrich semiconducting single-walled carbon nanotubes (SWNT) with high purity has led to a fast rise of solution-processed nanotube network field-effect transistors (FETs) with high carrier mobilities and on/off current ratios. However, it remains an open question whether it is best to use a network of only one nanotube species (monochiral) or whether a mix of purely semiconducting nanotubes but with different bandgaps is sufficient for high performance FETs. For a range of different polymer-sorted semiconducting SWNT networks, we demonstrate that a very small amount of narrow bandgap nanotubes within a dense network of large bandgap nanotubes can dominate the transport and thus severely limit on-currents and effective carrier mobility. Using gate-voltage-dependent electroluminescence, we spatially and spectrally reveal preferential charge transport that does not depend on nominal network density but on the energy level distribution within the network and carrier density. On the basis of these results, we outline rational guidelines for the use of mixed SWNT networks to obtain high performance FETs while reducing the cost for purification. PMID:26867006

  19. Understanding Charge Transport in Mixed Networks of Semiconducting Carbon Nanotubes

    PubMed Central

    2016-01-01

    The ability to select and enrich semiconducting single-walled carbon nanotubes (SWNT) with high purity has led to a fast rise of solution-processed nanotube network field-effect transistors (FETs) with high carrier mobilities and on/off current ratios. However, it remains an open question whether it is best to use a network of only one nanotube species (monochiral) or whether a mix of purely semiconducting nanotubes but with different bandgaps is sufficient for high performance FETs. For a range of different polymer-sorted semiconducting SWNT networks, we demonstrate that a very small amount of narrow bandgap nanotubes within a dense network of large bandgap nanotubes can dominate the transport and thus severely limit on-currents and effective carrier mobility. Using gate-voltage-dependent electroluminescence, we spatially and spectrally reveal preferential charge transport that does not depend on nominal network density but on the energy level distribution within the network and carrier density. On the basis of these results, we outline rational guidelines for the use of mixed SWNT networks to obtain high performance FETs while reducing the cost for purification. PMID:26867006

  20. Earthquake lights and the stress-activation of positive hole charge carriers in rocks

    USGS Publications Warehouse

    St-Laurent, F.; Derr, J.S.; Freund, F.T.

    2006-01-01

    Earthquake-related luminous phenomena (also known as earthquake lights) may arise from (1) the stress-activation of positive hole (p-hole) charge carriers in igneous rocks and (2) the accumulation of high charge carrier concentrations at asperities in the crust where the stress rates increase very rapidly as an earthquake approaches. It is proposed that, when a critical charge carrier concentration is reached, the p-holes form a degenerated solid state plasma that can break out of the confined rock volume and propagate as a rapidly expanding charge cloud. Upon reaching the surface the charge cloud causes dielectric breakdown at the air-rock interface, i.e. corona discharges, accompanied by the emission of light and high frequency electromagnetic radiation. ?? 2006 Elsevier Ltd. All rights reserved.

  1. Electrophotographic properties of thiophene derivatives as charge transport material

    NASA Astrophysics Data System (ADS)

    Kuroda, Masami; Kawate, Kenji; Nabeta, Osamu; Furusho, N.

    1991-08-01

    The authors investigated electrophotographic properties of some substituted thiophenecarboxaldehyde-hydrazones as charge transport materials in layered-type photoreceptors from a viewpoint of molecular design. The values of optical bandgap [Eg(opt)] of the polycarbonate films doped with the hydrazones decrease from 2.9 to 2.4 eV with increasing thiophene rings and, therefore, with increasing (pi) -conjugation length. The Eg(opt) values for the thiophene derivatives are smaller than those for phenyl derivatives. Hole mobilities in the polycarbonate films doped with the hydrazones (50% in weight ratio) fall in the range between 1X10MIN6 and 5X10MIN6 cm(superscript 2/Vsec. Any significant difference was not found between the hole drift mobilities for the thiophene derivatives and those for the phenyl derivatives. Hole mobility and charge injection efficiency of the thiophene derivatives increase with decreasing Eg(opt). The hydrazone derivatives with longer (pi) -conjugation length show higher hole mobility and higher charge injection efficiency. And the thiophene derivative shows higher injection efficiency and larger total carrier quantity than the phenyl derivative. The thiophene derivative is superior to the phenyl derivative as a charge transport dopant.

  2. Thermally activated charge transport in microbial protein nanowires

    PubMed Central

    Lampa-Pastirk, Sanela; Veazey, Joshua P.; Walsh, Kathleen A.; Feliciano, Gustavo T.; Steidl, Rebecca J.; Tessmer, Stuart H.; Reguera, Gemma

    2016-01-01

    The bacterium Geobacter sulfurreducens requires the expression of conductive protein filaments or pili to respire extracellular electron acceptors such as iron oxides and uranium and to wire electroactive biofilms, but the contribution of the protein fiber to charge transport has remained elusive. Here we demonstrate efficient long-range charge transport along individual pili purified free of metal and redox organic cofactors at rates high enough to satisfy the respiratory rates of the cell. Carrier characteristics were within the orders reported for organic semiconductors (mobility) and inorganic nanowires (concentration), and resistivity was within the lower ranges reported for moderately doped silicon nanowires. However, the pilus conductance and the carrier mobility decreased when one of the tyrosines of the predicted axial multistep hopping path was replaced with an alanine. Furthermore, low temperature scanning tunneling microscopy demonstrated the thermal dependence of the differential conductance at the low voltages that operate in biological systems. The results thus provide evidence for thermally activated multistep hopping as the mechanism that allows Geobacter pili to function as protein nanowires between the cell and extracellular electron acceptors. PMID:27009596

  3. Thermally activated charge transport in microbial protein nanowires.

    PubMed

    Lampa-Pastirk, Sanela; Veazey, Joshua P; Walsh, Kathleen A; Feliciano, Gustavo T; Steidl, Rebecca J; Tessmer, Stuart H; Reguera, Gemma

    2016-01-01

    The bacterium Geobacter sulfurreducens requires the expression of conductive protein filaments or pili to respire extracellular electron acceptors such as iron oxides and uranium and to wire electroactive biofilms, but the contribution of the protein fiber to charge transport has remained elusive. Here we demonstrate efficient long-range charge transport along individual pili purified free of metal and redox organic cofactors at rates high enough to satisfy the respiratory rates of the cell. Carrier characteristics were within the orders reported for organic semiconductors (mobility) and inorganic nanowires (concentration), and resistivity was within the lower ranges reported for moderately doped silicon nanowires. However, the pilus conductance and the carrier mobility decreased when one of the tyrosines of the predicted axial multistep hopping path was replaced with an alanine. Furthermore, low temperature scanning tunneling microscopy demonstrated the thermal dependence of the differential conductance at the low voltages that operate in biological systems. The results thus provide evidence for thermally activated multistep hopping as the mechanism that allows Geobacter pili to function as protein nanowires between the cell and extracellular electron acceptors. PMID:27009596

  4. Low Temperature Charge Transport Study in Polypyrrole

    NASA Astrophysics Data System (ADS)

    Taunk, Manish; Chand, Subhash

    2011-12-01

    Organic polymers were usually considered as electrical insulators but due to the extended ?-backbone system a new class of electrically conductive organic polymers is possible. These ? conjugated polymers have various remarkable properties which leads to their probable use in variety of applications like electronic devices, rechargeable batteries, sensors, corrosion protecting coating etc. Among other conducting polymers polypyrrole has attracted great attension due to high electrical conductivity and good environmental stability. In this study pelletized samples of chemically synthesized polypyrrole using ferric chloride and ammonium peroxydisulphate as oxidizing agents were electrically characterized over wide temperature range of 10-300 K. An effort has been made to explore the charge transport in these doped samples using charge transport models. The analysis of experimental data predicts that hopping and tunneling transports are the dominant mechanism in their respective temperature range.

  5. Influence of injected charge carriers on photocurrents in polymer solar cells

    NASA Astrophysics Data System (ADS)

    Wehenkel, Dominique J.; Koster, L. Jan Anton; Wienk, Martijn M.; Janssen, René A. J.

    2012-03-01

    We determine and analyze the photocurrent Jph in polymer solar cells under conditions where, no, one, or two different charge carriers can be injected by choosing appropriate electrodes and compare the experimental results to simulations based on a drift-diffusion device model that accounts for photogeneration and Langevin recombination of electrons and holes. We demonstrate that accounting for the series resistance of the device is essential to determine Jph. Without such correction, the results are, even qualitatively, incorrect. We show that in solar cells with forward bias applied Jph is reduced by recombination of photogenerated charge carriers with injected charge carriers. Self-selective contacts or band bending are not necessary to explain the effects. Without injecting contacts Jph is symmetric around the compensation voltage. A simple analytical model shows that under high forward bias Jph scales inversely with 1 + ξγpre, in which γpre represents the extent of Langevin recombination and ξ is a positive constant. Under conditions where Langevin recombination is very low or when electron and hole mobility are a very different, photogenerated charge carriers can affect the space-charge field and modify the injection of charge carriers. We show by simulations and experimentally that under such conditions the photocurrent can exceed that charge generation such that, effectively, photocurrent multiplication occurs.

  6. Transistors: Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening (Adv. Mater. 3/2016).

    PubMed

    Yu, Zhihao; Ong, Zhun-Yong; Pan, Yiming; Cui, Yang; Xin, Run; Shi, Yi; Wang, Baigeng; Wu, Yun; Chen, Tangsheng; Zhang, Yong-Wei; Zhang, Gang; Wang, Xinran

    2016-01-01

    On page 547, charged impurities in monolayer MoS2 are effectively screened by combining a high-? dielectric substrate and a high density of carriers, leading to an unprecedented room-temperature electron mobility of ?150 cm(2) V(-1) s(-1) . Y. Shi, G. Zhang, X. Wang and co-workers also demonstrate phonon-limited transport in monolayer MoS2 for the first time, an important milestone for electronic device applications. PMID:26765676

  7. 34 nm Charge Transport through DNA

    NASA Astrophysics Data System (ADS)

    Slinker, Jason; Muren, Natalie; Renfrew, Sara; Barton, Jacqueline

    2011-03-01

    Long-range charge transport through DNA has broad-reaching implications due to its inherent biological recognition capabilities and unmatched capacity to be patterned into precise, nanoscale shapes. We have observed charge transport through 34 nm DNA monolayers (100 base pairs) using DNA-mediated electrochemistry. Cyclic voltammetry of multiplexed gold electrodes modified with 100mer DNAs reveal sizable peaks from distally-bound Nile Blue redox probes for well matched duplexes but highly attenuated redox peaks from 100mer monolayers containing a single base pair mismatch, demonstrating that the charge transfer is DNA-mediated. The 100mers on the gold surface are efficiently cleaved by the restriction enzyme RsaI. The 100mers in the DNA film thus adopt conformations that are readily accessible to protein binding and restriction. The ability to assemble well-characterized DNA films with these 100mers permits the demonstration of charge transport over distances surpassing most reports of molecular wires. Supported by funding from the NIH/NIBIB.

  8. Charge carrier mobility and photorefractive grating buildup in bipolar organic glasses

    NASA Astrophysics Data System (ADS)

    Sohn, Jiwon; Hwang, Jaehoon; Park, Soo Young; Noh, Yong-Young; Kim, Jang-Joo

    2002-07-01

    Two-component organic glasses consisting of photoconductive molecule, N')-9-(2-ethylhexyl-9H-carbazol-3-ylmethylene-N,N-diphenyl- hydrazine (EHCzHy), and multifunctional photorefractive molecules, 9-(2-ethyl-hexyl)-3-2-(4-methanesulfonyl-phenyl)-vinyl-9H-carbazole (EHCS) [J. Sohn [et al.], Appl. Phys. Lett. 77, 1422 (2000)] and 9-(2-ethylhexyl)-3-2-(4-nitro-phenyl)-vinyl-9H-carbazole (EHCN), were prepared, and their charge carrier mobility and photorefractive grating buildup were investigated. EHCzHy is a unipolar hole-transporting (muh=4.16 x10-6 cm2/V s) molecule with no electro-optic property. EHCS and EHCN are nonlinear optical molecules with unipolar (muh=2.42 x10-6 cm2/V s) and bipolar (muh=2.30 x10-6 cm2/V s,mue=2.86 x10-6 cm2/V s) carrier mobilities, respectively. Different behaviors of the photorefractive grating buildup in two-component organic glasses were investigated as a function of EHCN or EHCS content.

  9. Electron transport model of dielectric charging

    NASA Technical Reports Server (NTRS)

    Beers, B. L.; Hwang, H. C.; Lin, D. L.; Pine, V. W.

    1979-01-01

    A computer code (SCCPOEM) was assembled to describe the charging of dielectrics due to irradiation by electrons. The primary purpose for developing the code was to make available a convenient tool for studying the internal fields and charge densities in electron-irradiated dielectrics. The code, which is based on the primary electron transport code POEM, is applicable to arbitrary dielectrics, source spectra, and current time histories. The code calculations are illustrated by a series of semianalytical solutions. Calculations to date suggest that the front face electric field is insufficient to cause breakdown, but that bulk breakdown fields can easily be exceeded.

  10. Charge Redistribution and Transport in Molecular Contacts

    NASA Astrophysics Data System (ADS)

    Corso, Martina; Ondráček, Martin; Lotze, Christian; Hapala, Prokop; Franke, Katharina J.; Jelínek, Pavel; Pascual, J. Ignacio

    2015-09-01

    The forces between two single molecules brought into contact, and their connection with charge transport through the molecular junction, are studied here using non contact AFM, STM, and density functional theory simulations. A carbon monoxide molecule approaching an acetylene molecule (C2 H2 ) initially feels weak attractive electrostatic forces, partly arising from charge reorganization in the presence of molecular . We find that the molecular contact is chemically passive, and protects the electron tunneling barrier from collapsing, even in the limit of repulsive forces. However, we find subtle conductance and force variations at different contacting sites along the C2 H2 molecule attributed to a weak overlap of their respective frontier orbitals.

  11. Charge transport in strongly coupled quantum dot solids.

    PubMed

    Kagan, Cherie R; Murray, Christopher B

    2015-12-01

    The emergence of high-mobility, colloidal semiconductor quantum dot (QD) solids has triggered fundamental studies that map the evolution from carrier hopping through localized quantum-confined states to band-like charge transport in delocalized and hybridized states of strongly coupled QD solids, in analogy with the construction of solids from atoms. Increased coupling in QD solids has led to record-breaking performance in QD devices, such as electronic transistors and circuitry, optoelectronic light-emitting diodes, photovoltaic devices and photodetectors, and thermoelectric devices. Here, we review the advances in synthesis, assembly, ligand treatments and doping that have enabled high-mobility QD solids, as well as the experiments and theory that depict band-like transport in the QD solid state. We also present recent QD devices and discuss future prospects for QD materials and device design. PMID:26551016

  12. Charge transport in strongly coupled quantum dot solids

    NASA Astrophysics Data System (ADS)

    Kagan, Cherie R.; Murray, Christopher B.

    2015-12-01

    The emergence of high-mobility, colloidal semiconductor quantum dot (QD) solids has triggered fundamental studies that map the evolution from carrier hopping through localized quantum-confined states to band-like charge transport in delocalized and hybridized states of strongly coupled QD solids, in analogy with the construction of solids from atoms. Increased coupling in QD solids has led to record-breaking performance in QD devices, such as electronic transistors and circuitry, optoelectronic light-emitting diodes, photovoltaic devices and photodetectors, and thermoelectric devices. Here, we review the advances in synthesis, assembly, ligand treatments and doping that have enabled high-mobility QD solids, as well as the experiments and theory that depict band-like transport in the QD solid state. We also present recent QD devices and discuss future prospects for QD materials and device design.

  13. 75 FR 48409 - Establishment of the Toxic by Inhalation Hazard Common Carrier Transportation Advisory Committee

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-10

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF TRANSPORTATION Surface Transportation Board Establishment of the Toxic by Inhalation Hazard Common Carrier Transportation Advisory Committee AGENCY: Surface Transportation Board. ACTION: Notice of establishment of the Toxic...

  14. Negative correlation between charge carrier density and mobility fluctuations in graphene

    NASA Astrophysics Data System (ADS)

    Lu, Jianming; Pan, Jie; Yeh, Sheng-Shiuan; Zhang, Haijing; Zheng, Yuan; Chen, Qihong; Wang, Zhe; Zhang, Bing; Lin, Juhn-Jong; Sheng, Ping

    2014-08-01

    By carrying out simultaneous longitudinal and Hall measurements in graphene, we find that the 1/f noise for the charge carrier density is negatively correlated to that of mobility, with a governing behavior that differs significantly from the relation between their mean values. The correlation in the noise data can be quantitatively explained by a single-parameter theory whose underlying physics is the trapping and detrapping of the fluctuating charge carriers by the oppositely charged Coulomb scattering centers. This can alter the effective density of long-range scattering centers in a transient manner, with the consequent fluctuating effect on the mobility.

  15. Carrier transport in graphite/Si3N4-nanobelt/PtIr Schottky barrier diodes

    NASA Astrophysics Data System (ADS)

    Bi, Jinghui; Wei, Guodong; Shang, Minghui; Gao, Fengmei; Tang, Bin; Yang, Weiyou

    2014-11-01

    Understanding the roles of contacts and interfaces between metals and semiconductors is critically important for exploring nanostructure-based nanodevices. The present study shed some light on the dominated mechanism of size-dependent carrier transfer in the Schottky barrier diodes configured by the Pt-Ir/Si3N4-nanobelt/graphite (metal-semiconductor-metal (MSM)) sandwiched structure via a conductive atomic force microscopy using nanobelts with various thicknesses. The observed I-V behaviors suggested that the charge transports under the low and high biases were dominated by the reverse-biased Schottky barrier and space-charge-limited current (SCLC), respectively. The intermediate region between the low and high biases presented the transition between the Ohmic and SCLC behaviors, in which the ≡Si and =N dangling bonds acted as the defects within the Si3N4 nanobelt surface are predominant in the charge transfer.

  16. Charge transport and injection in amorphous organic electronic materials

    NASA Astrophysics Data System (ADS)

    Tse, Shing Chi

    This thesis presents how we use various measuring techniques to study the charge transport and injection in organic electronic materials. Understanding charge transport and injection properties in organic solids is of vital importance for improving performance characteristics of organic electronic devices, including organic-light-emitting diodes (OLEDs), photovoltaic cells (OPVs), and field effect transistors (OFETs). The charge transport properties of amorphous organic materials, commonly used in organic electronic devices, are investigated by the means of carrier mobility measurements. Transient electroluminescence (EL) technique was used to evaluate the electron mobility of an electron transporting material--- tris(8-hydroxyquinoline) aluminum (Alq3). The results are in excellent agreement with independent time-of-flight (TOF) measurements. Then, the effect of dopants on electron transport was also examined. TOF technique was also used to examine the effects of tertiary-butyl (t-Bu) substitutions on anthracene derivatives (ADN). All ADN compounds were found to be ambipolar. As the degree of t-Bu substitution increases, the carrier mobilities decrease progressively. The reduction of carrier mobilities with increasing t-butylation can be attributed to a decrease in the charge-transfer integral or the wavefunction overlap. In addition, from TOF measurements, two naphthylamine-based hole transporters, namely, N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'diamine (NPB) and 4,4',4"-tris(n-(2-naphthyl)-n-phenyl-amino)-triphenylamine (2TNATA) were found to possess electron-transporting (ET) abilities. An organic light-emitting diode that employed NPB as the ET material was demonstrated. The electron conducting mechanism of NPB and 2TNATA in relation to the hopping model will be discussed. Furthermore, the ET property of NPB applied in OLEDs will also be examined. Besides transient EL and TOF techniques, we also use dark-injection space-charge-limited current (DISCLC) to study the charge injection properties of three phenylamine-based (PA) compounds, MTDATA (4,4',4''-Tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine), NPB, and TPD (N,N'-diphenyl-N,N'-bis(3-methyl phenyl) (1,1'-biphenyl)-4,4'diamine).Poly(3,4-ethylenedioxythiophene) doped with polystyrenesulphonic acid (PEDOT:PSS) was used as a hole-injecting anode in current-voltage (JV) and DISCLC. Clear DISCLC transient peaks were observed over a wide range of electric fields in all cases. For MTDATA and NPB, hole mobilities evaluated by DI experiments are in excellent agreement with mobilties deduced from TOF technique. It can be concluded that, for the purpose of JV and DI experiments, PEDOT:PSS forms an Ohmic contact with MTDATA and a quasi-Ohmic contact with NPB despite the relatively low-lying highest occupied molecular orbital of the later. In the case of TPD, hole injection from PEDOT:PSS deviates substantially from Ohmic injection, leading to a lower than expected DI-extracted hole mobility. Finally, a composite anode will be demonstrated to improve the hole injection efficiency.

  17. Controlling the screening process of a nanoscaled space charge region by minority carriers

    PubMed Central

    Kloth, Philipp; Kaiser, Katharina; Wenderoth, Martin

    2016-01-01

    The miniaturization of future electronic devices is intimately connected to the ability to control electric fields on the atomic scale. In a nanoscopic system defined by a limited number of charges, the combined dynamics of bound and free charges become important. Here we present a model system based on the electrostatic interaction between a metallic tip of a scanning tunnelling microscope and a GaAs(110) semiconductor surface. The system is driven out of equilibrium by optical excitation, which provides ambipolar free charge carriers, and by an optically induced unipolar tunnel current. This combination enables the active control of the density and spatial distribution of free and bound charge in the space-charge region, that is, modifying the screening processes. Temporal fluctuations of single dopants are modified, meaning we are able to control the noise of the system. It is found that free charge carriers suppress the noise level in field-controlled, nanoscopic systems. PMID:26728867

  18. Controlling the screening process of a nanoscaled space charge region by minority carriers

    NASA Astrophysics Data System (ADS)

    Kloth, Philipp; Kaiser, Katharina; Wenderoth, Martin

    2016-01-01

    The miniaturization of future electronic devices is intimately connected to the ability to control electric fields on the atomic scale. In a nanoscopic system defined by a limited number of charges, the combined dynamics of bound and free charges become important. Here we present a model system based on the electrostatic interaction between a metallic tip of a scanning tunnelling microscope and a GaAs(110) semiconductor surface. The system is driven out of equilibrium by optical excitation, which provides ambipolar free charge carriers, and by an optically induced unipolar tunnel current. This combination enables the active control of the density and spatial distribution of free and bound charge in the space-charge region, that is, modifying the screening processes. Temporal fluctuations of single dopants are modified, meaning we are able to control the noise of the system. It is found that free charge carriers suppress the noise level in field-controlled, nanoscopic systems.

  19. Negative correlation between charge carrier density and mobility fluctuations in graphene

    NASA Astrophysics Data System (ADS)

    Pan, Jie; Lu, Jianming; Sheng, Ping; Institute of Physics and Department of Electrophysics, National Chiao Tung University, Taiwan Collaboration

    2014-03-01

    By carrying out simultaneous longitudinal and Hall measurements in graphene, we find that the 1/f noise for the charge carrier density is negatively correlated to that of mobility, with a governing behavior that differs significantly from the relation between their mean values. The correlation in the noise data can be quantitatively explained by a single parameter theory whose underlying physics is the trapping and de-trapping of the fluctuating charge carriers by the oppositely charged Coulomb scattering centers. This can alter the effective density of long-range scattering centers in a transient manner, with the consequent fluctuating effect on the mobility. The longitudinal noise turns out to be dominated by the remaining component of the mobility fluctuations, and display no correlation to the Hall noise. Due to the negative correlation between charge carrier density and mobility fluctuations, the normalized PSD is smaller than that of the Hall noise. Research Grants Council of Hong Kong Grant HKUST9/CRF/08.

  20. Variational multiscale models for charge transport

    PubMed Central

    Wei, Guo-Wei; Zheng, Qiong; Chen, Zhan; Xia, Kelin

    2012-01-01

    This work presents a few variational multiscale models for charge transport in complex physical, chemical and biological systems and engineering devices, such as fuel cells, solar cells, battery cells, nanofluidics, transistors and ion channels. An essential ingredient of the present models, introduced in an earlier paper (Bulletin of Mathematical Biology, 72, 1562-1622, 2010), is the use of differential geometry theory of surfaces as a natural means to geometrically separate the macroscopic domain from the microscopic domain, meanwhile, dynamically couple discrete and continuum descriptions. Our main strategy is to construct the total energy functional of a charge transport system to encompass the polar and nonpolar free energies of solvation, and chemical potential related energy. By using the Euler-Lagrange variation, coupled Laplace-Beltrami and Poisson-Nernst-Planck (LB-PNP) equations are derived. The solution of the LB-PNP equations leads to the minimization of the total free energy, and explicit profiles of electrostatic potential and densities of charge species. To further reduce the computational complexity, the Boltzmann distribution obtained from the Poisson-Boltzmann (PB) equation is utilized to represent the densities of certain charge species so as to avoid the computationally expensive solution of some Nernst-Planck (NP) equations. Consequently, the coupled Laplace-Beltrami and Poisson-Boltzmann-Nernst-Planck (LB-PBNP) equations are proposed for charge transport in heterogeneous systems. A major emphasis of the present formulation is the consistency between equilibrium LB-PB theory and non-equilibrium LB-PNP theory at equilibrium. Another major emphasis is the capability of the reduced LB-PBNP model to fully recover the prediction of the LB-PNP model at non-equilibrium settings. To account for the fluid impact on the charge transport, we derive coupled Laplace-Beltrami, Poisson-Nernst-Planck and Navier-Stokes equations from the variational principle for chemo-electro-fluid systems. A number of computational algorithms is developed to implement the proposed new variational multiscale models in an efficient manner. A set of ten protein molecules and a realistic ion channel, Gramicidin A, are employed to confirm the consistency and verify the capability. Extensive numerical experiment is designed to validate the proposed variational multiscale models. A good quantitative agreement between our model prediction and the experimental measurement of current-voltage curves is observed for the Gramicidin A channel transport. This paper also provides a brief review of the field. PMID:23172978

  1. Variational multiscale models for charge transport.

    PubMed

    Wei, Guo-Wei; Zheng, Qiong; Chen, Zhan; Xia, Kelin

    2012-01-01

    This work presents a few variational multiscale models for charge transport in complex physical, chemical and biological systems and engineering devices, such as fuel cells, solar cells, battery cells, nanofluidics, transistors and ion channels. An essential ingredient of the present models, introduced in an earlier paper (Bulletin of Mathematical Biology, 72, 1562-1622, 2010), is the use of differential geometry theory of surfaces as a natural means to geometrically separate the macroscopic domain from the microscopic domain, meanwhile, dynamically couple discrete and continuum descriptions. Our main strategy is to construct the total energy functional of a charge transport system to encompass the polar and nonpolar free energies of solvation, and chemical potential related energy. By using the Euler-Lagrange variation, coupled Laplace-Beltrami and Poisson-Nernst-Planck (LB-PNP) equations are derived. The solution of the LB-PNP equations leads to the minimization of the total free energy, and explicit profiles of electrostatic potential and densities of charge species. To further reduce the computational complexity, the Boltzmann distribution obtained from the Poisson-Boltzmann (PB) equation is utilized to represent the densities of certain charge species so as to avoid the computationally expensive solution of some Nernst-Planck (NP) equations. Consequently, the coupled Laplace-Beltrami and Poisson-Boltzmann-Nernst-Planck (LB-PBNP) equations are proposed for charge transport in heterogeneous systems. A major emphasis of the present formulation is the consistency between equilibrium LB-PB theory and non-equilibrium LB-PNP theory at equilibrium. Another major emphasis is the capability of the reduced LB-PBNP model to fully recover the prediction of the LB-PNP model at non-equilibrium settings. To account for the fluid impact on the charge transport, we derive coupled Laplace-Beltrami, Poisson-Nernst-Planck and Navier-Stokes equations from the variational principle for chemo-electro-fluid systems. A number of computational algorithms is developed to implement the proposed new variational multiscale models in an efficient manner. A set of ten protein molecules and a realistic ion channel, Gramicidin A, are employed to confirm the consistency and verify the capability. Extensive numerical experiment is designed to validate the proposed variational multiscale models. A good quantitative agreement between our model prediction and the experimental measurement of current-voltage curves is observed for the Gramicidin A channel transport. This paper also provides a brief review of the field. PMID:23172978

  2. Particle Transport through Hydrogels Is Charge Asymmetric

    PubMed Central

    Zhang, Xiaolu; Hansing, Johann; Netz, Roland R.; DeRouchey, Jason E.

    2015-01-01

    Transport processes within biological polymer networks, including mucus and the extracellular matrix, play an important role in the human body, where they serve as a filter for the exchange of molecules and nanoparticles. Such polymer networks are complex and heterogeneous hydrogel environments that regulate diffusive processes through finely tuned particle-network interactions. In this work, we present experimental and theoretical studies to examine the role of electrostatics on the basic mechanisms governing the diffusion of charged probe molecules inside model polymer networks. Translational diffusion coefficients are determined by fluorescence correlation spectroscopy measurements for probe molecules in uncharged as well as cationic and anionic polymer solutions. We show that particle transport in the charged hydrogels is highly asymmetric, with diffusion slowed down much more by electrostatic attraction than by repulsion, and that the filtering capability of the gel is sensitive to the solution ionic strength. Brownian dynamics simulations of a simple model are used to examine key parameters, including interaction strength and interaction range within the model networks. Simulations, which are in quantitative agreement with our experiments, reveal the charge asymmetry to be due to the sticking of particles at the vertices of the oppositely charged polymer networks. PMID:25650921

  3. Particle transport through hydrogels is charge asymmetric.

    PubMed

    Zhang, Xiaolu; Hansing, Johann; Netz, Roland R; DeRouchey, Jason E

    2015-02-01

    Transport processes within biological polymer networks, including mucus and the extracellular matrix, play an important role in the human body, where they serve as a filter for the exchange of molecules and nanoparticles. Such polymer networks are complex and heterogeneous hydrogel environments that regulate diffusive processes through finely tuned particle-network interactions. In this work, we present experimental and theoretical studies to examine the role of electrostatics on the basic mechanisms governing the diffusion of charged probe molecules inside model polymer networks. Translational diffusion coefficients are determined by fluorescence correlation spectroscopy measurements for probe molecules in uncharged as well as cationic and anionic polymer solutions. We show that particle transport in the charged hydrogels is highly asymmetric, with diffusion slowed down much more by electrostatic attraction than by repulsion, and that the filtering capability of the gel is sensitive to the solution ionic strength. Brownian dynamics simulations of a simple model are used to examine key parameters, including interaction strength and interaction range within the model networks. Simulations, which are in quantitative agreement with our experiments, reveal the charge asymmetry to be due to the sticking of particles at the vertices of the oppositely charged polymer networks. PMID:25650921

  4. Novel macrocyclic carriers for proton-coupled liquid membrane transport

    SciTech Connect

    Lamb, J.D.

    1991-06-10

    The objective of our research program is to elucidate the chemical principles which are responsible for the cation selectivity and permeability of liquid membranes containing macrocyclic carriers. Several new macrocyclic carriers were synthesized during the last three year period, including selenium-containing macrocycles, new crown-4 structures, and several new crown structures containing nitrogen based heterocycles as substituents in the principal macrocyclic ring. The cation binding properties of these macrocycles were investigated by potentiometric titration, calorimetric titration, solvent extraction, and NMR techniques. In addition, hydrophobic macrocycles were incorporated into dual hollow fiber membrane systems to investigate their membrane performance, especially in the proton-coupled transport mode. It was found that the dual hollow fiber system maintains the cation selectivity and permeability of supported liquid membranes, while enhancing membrane stability. The diffusion limited transport model was expanded to account for membrane solvent effects. Furthermore, Eu{sup 2+} transport was found to be similar to that of strontium and much higher than that of the lanthanides, in supported liquid membrane systems.

  5. Carrier transport at the metal-MoS2 interface.

    PubMed

    Ahmed, Faisal; Choi, Min Sup; Liu, Xiaochi; Yoo, Won Jong

    2015-05-28

    This study illustrates the nature of electronic transport and its transition from one mechanism to another between a metal electrode and MoS2 channel interface in a field effect transistor (FET) device. Interestingly, measurements of the contact resistance (Rc) as a function of temperature indicate a transition in the carrier transport across the energy barrier from thermionic emission at a high temperature to tunneling at a low temperature. Furthermore, at a low temperature, the nature of the tunneling behavior is ascertained by the current-voltage dependency that helps us feature direct tunneling at a low bias and Fowler-Nordheim tunneling at a high bias for a Pd-MoS2 contact due to the effective barrier shape modulation by biasing. In contrast, only direct tunneling is observed for a Cr-MoS2 contact over the entire applied bias range. In addition, simple analytical calculations were carried out to extract Rc at the gating range, and the results are consistent with the experimental data. Our results describe the transition in carrier transport mechanisms across a metal-MoS2 interface, and this information provides guidance for the design of future flexible, transparent electronic devices based on 2-dimensional materials. PMID:25927942

  6. Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation

    PubMed Central

    Friederich, Pascal; Schäfer, Bernhard; Fattori, Valeria; Sun, Xiangnan; Strunk, Timo; Meded, Velimir; Hueso, Luis E; Wenzel, Wolfgang; Ruben, Mario

    2015-01-01

    Summary We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olate)aluminium(III) (Al(Op)3) both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op)3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op)3 into organic thin film transistors (TFTs) was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons) suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement. PMID:26171287

  7. Tuning the charge carrier density in the thermoelectric colusite

    NASA Astrophysics Data System (ADS)

    Kim, Fiseong S.; Suekuni, Koichiro; Nishiate, Hirotaka; Ohta, Michihiro; Tanaka, Hiromi I.; Takabatake, Toshiro

    2016-05-01

    The colusite Cu26V2Sn6S32 has high potential as a thermoelectric material at medium-high temperatures because of a large Seebeck coefficient (S ≃ 220 μV/K) and rather small electrical resistivity (ρ ≃ 100 μΩm) at 660 K. To improve the thermoelectric performance, we have tuned the hole carrier density p by substituting Zn for Cu in Cu26-xZnxV2Sn6S32 (x = 1-3) and starting with Cu and Sn deficient compositions in Cu26-yV2Sn6S32 (y = 1, 2) and Cu26V2Sn6-zS32 (z = 0.25-1), respectively. Powder x-ray diffraction and electron-probe microanalysis showed that the Zn-substituted samples and Sn-deficient (z ≥ 0.5) samples are formed in a single phase, whereas the Cu26-yV2Sn6S32 samples are composed of two phases with slightly different compositions. Within these samples, the value of p at 300 K varies in the range between 3.6 × 1020 and 2.8 × 1021 cm-3. The relation between p and S led to the effective mass m* of 4-7m0 for the hole carriers. The large S of the colusite is therefore ascribed to the heavy mass carriers of the valence band top. The decreases in p with x and y reduced the dimensionless thermoelectric figure of merit ZT, whereas the increase in p with z raised ZT from 0.56 (z = 0) to 0.62 (z = 0.5) at 660 K.

  8. Charge Transport and Glassy Dynamics in Ionic Liquids

    SciTech Connect

    Sangoro, Joshua R; Kremer, Friedrich

    2012-01-01

    Ionic liquids (ILs) exhibit unique features such as low melting points, low vapor pressures, wide liquidus temperature ranges, high thermal stability, high ionic conductivity, and wide electrochemical windows. As a result, they show promise for use in variety of applications: as reaction media, in batteries and supercapacitors, in solar and fuel cells, for electrochemical deposition of metals and semiconductors, for protein extraction and crystallization, and many others. Because of the ease with which they can be supercooled, ionic liquids offer new opportunities to investigate long-standing questions regarding the nature of the dynamic glass transition and its possible link to charge transport. Despite the significant steps achieved from experimental and theoretical studies, no generally accepted quantitative theory of dynamic glass transition to date has been capable of reproducing all the experimentally observed features. In this Account, we discuss recent studies of the interplay between charge transport and glassy dynamics in ionic liquids as investigated by a combination of several experimental techniques including broadband dielectric spectroscopy, pulsed field gradient nuclear magnetic resonance, dynamic mechanical spectroscopy, and differential scanning calorimetry. Based on EinsteinSmoluchowski relations, we use dielectric spectra of ionic liquids to determine diffusion coefficients in quantitative agreement with independent pulsed field gradient nuclear magnetic resonance measurements, but spanning a broader range of more than 10 orders of magnitude. This approach provides a novel opportunity to determine the electrical mobility and effective number density of charge carriers as well as their types of thermal activation from the measured dc conductivity separately. We also unravel the origin of the remarkable universality of charge transport in different classes of glass-forming ionic liquids.

  9. Dust Charging and Transport on Surfaces

    SciTech Connect

    Wang, X.; Robertson, S.; Horanyi, M.

    2011-11-29

    In this paper, we review laboratory studies of dust transport on surfaces in plasmas, performed for a number of different mechanisms: 1) Dust particles were levitated in plasma sheaths by electrostatic forces balancing the gravitational force. 2) Dust was observed to spread over and lift off a surface that repels electrons in a plasma. 3) Dust was transported on surfaces having different secondary electron yields in plasma with an electron beam as a consequence of differential charging. 4) We also report a mechanism of dust transport by electric fields occurring at electron beam impact/shadow boundaries. These processes are candidates to explain the formation of dust ponds that were recently observed in craters on the asteroid Eros by the NEAR Shoemaker spacecraft.

  10. Dust Charging and Transport on Surfaces

    NASA Astrophysics Data System (ADS)

    Wang, X.; Robertson, S.; Horányi, M.

    2011-11-01

    In this paper, we review laboratory studies of dust transport on surfaces in plasmas, performed for a number of different mechanisms: 1) Dust particles were levitated in plasma sheaths by electrostatic forces balancing the gravitational force. 2) Dust was observed to spread over and lift off a surface that repels electrons in a plasma. 3) Dust was transported on surfaces having different secondary electron yields in plasma with an electron beam as a consequence of differential charging. 4) We also report a mechanism of dust transport by electric fields occurring at electron beam impact/shadow boundaries. These processes are candidates to explain the formation of dust ponds that were recently observed in craters on the asteroid Eros by the NEAR Shoemaker spacecraft.

  11. Unraveling Charge Carriers Generation, Diffusion, and Recombination in Formamidinium Lead Triiodide Perovskite Polycrystalline Thin Film.

    PubMed

    Piatkowski, Piotr; Cohen, Boiko; Ponseca, Carlito S; Salado, Manuel; Kazim, Samrana; Ahmad, Shahzada; Sundström, Villy; Douhal, Abderrazzak

    2016-01-01

    We report on studies of the formamidinium lead triiodide (FAPbI3) perovskite film using time-resolved terahertz (THz) spectroscopy (TRTS) and flash photolysis to explore charge carriers generation, migration, and recombination. The TRTS results show that upon femtosecond excitation above the absorption edge, the initial high photoconductivity (∼75 cm(2) V(-1) s(-1)) remains constant at least up to 8 ns, which corresponds to a diffusion length of 25 μm. Pumping below the absorption edge results in a mobility of 40 cm(2) V(-1) s(-1) suggesting lower mobility of charge carriers located at the bottom of the conduction band or shallow sub-bandgap states. Furthermore, analysis of the THz kinetics reveals rising components of <1 and 20 ps, reflecting dissociation of excitons having different binding energies. Flash photolysis experiments indicate that trapped charge carriers persist for milliseconds. PMID:26703885

  12. Charge carrier losses of organic solar cells based on subphthalocyanine/C60 heterojunction

    NASA Astrophysics Data System (ADS)

    Zang, Yue; Yu, Jungsheng; Huang, Jiang; Jiang, Yadong

    2012-10-01

    Charge carrier losses of organic solar cells (OSCs) based on Subphthalocyanine (SubPc)/C60 heterojunction have been studied through the measurements of incident light intensity dependent response of the device. The light intensity was varied between 0.03 and 100 mW/cm2. The results showed that short circuit current density follows a linear dependence on light intensity (Pin), while open circuit voltage logarithmically increase with Pin with a slop of 120 mV/decade, indicating that the charge carrier losses are governed by trap-assisted recombination through interface states between donor and acceptor, with an estimated trap density of order 1024 m-3. Moreover, the inverse dependence of shunt resistance (RPA) on light intensity reveals that charge carriers are trapped in the bulk of active layer as well as at the organic/electrode interface, resulting in the decrease of fill factor (FF) with Pin.

  13. Nonequilibrium properties of charge carriers in cadmium iodide crystals

    SciTech Connect

    Lyskovich, A.B.; Piroga, S.A; Bondar', V.D.; Gal'chinskii, A.V.

    1988-03-01

    Detection and measurement of the photomagnetic effect (PME) in layered crystals of cadmium iodide are discussed. The basic behavior of the PME at room temperature, as well as its dependence on wavelength and intensity of illumination, the magnetic field, and the photoconductivity, are presented. These dependencies were obtained to calculate the diffusion length, bipolar diffusion coefficient, the surface recombination velocity, and the lifetime. The intrinsic behavior of the odd-function PME in highly conducting cadmium iodide crystals at room temperature and fields up to 6.8 /times/ 10/sup 5/ A/m may be qualitatively explained in the context of the theory developed for the case of thick specimens in a weak magnetic field and high injection level. The observed odd-function PME and photoconductivity have yielded, for the first time, values for the parameters associated with nonequilibrium carriers in highly conducting cadmium iodide crystals.

  14. Charge carrier dynamics of the heavy-fermion metal CeCoIn5 probed by THz spectroscopy

    NASA Astrophysics Data System (ADS)

    Pracht, Uwe S.; Simmendinger, Julian; Dressel, Martin; Endo, Ryota; Watashige, Tatsuya; Hanaoka, Yousuke; Shimozawa, Masaaki; Terashima, Takahito; Shibauchi, Takasada; Matsuda, Yuji; Scheffler, Marc

    2016-02-01

    We discuss the charge carrier dynamics of the heavy-fermion compound CeCoIn5 in the metallic regime measured by means of quasi-optical THz spectroscopy. The transmittance of electromagnetic radiation through a CeCoIn5 thin film on a dielectric substrate is analyzed in the single-particle Drude framework. We discuss the temperature dependence of the electronic properties, such as the scattering time and dc-conductivity and compare with transport measurements of the sheet resistance. Towards low temperatures, we find an increasing mismatch between the results from transport and Drude-analyzed optical measurements and a growing incapability of the simple single-particle picture describing the charge dynamics, likely caused by the evolving heavy-fermion nature of the correlated electron system.

  15. Spatially resolved measurements of charge carrier lifetimes in CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Kraft, C.; Hempel, H.; Buschmann, V.; Siebert, T.; Heisler, C.; Wesch, W.; Ronning, C.

    2013-03-01

    The lifetime of the minority charge carriers in polycrystalline Cadmium Telluride (pc-CdTe) for solar cell applications is a crucial material parameter and has been determined by analysis of the decay curves of the luminescence signal. Both the lateral and the transversal distributions of the carrier lifetime on the surface and in the bulk of pc-CdTe material as well as the respective solar cell characteristics were measured as a function of the deposition technique, the activation treatment, and the incorporation of additional group-V elements. The results are compared to prior studies. It was found that an activation process passivates grain boundaries and increases the carrier lifetime, which is then higher at the pn-junction than at the surface. Furthermore, nitrogen and phosphorus doping of the CdTe absorber material influences the charge carrier lifetime. The results show that the spatial resolved measurement of the carrier lifetime in pc-CdTe gives an important insight to the charge carrier dynamics of the material.

  16. Near-field control and imaging of free charge carrier variations in GaN nanowires

    NASA Astrophysics Data System (ADS)

    Berweger, Samuel; Blanchard, Paul T.; Brubaker, Matt D.; Coakley, Kevin J.; Sanford, Norman A.; Wallis, Thomas M.; Bertness, Kris A.; Kabos, Pavel

    2016-02-01

    Despite their uniform crystallinity, the shape and faceting of semiconducting nanowires (NWs) can give rise to variations in structure and associated electronic properties. Here, we develop a hybrid scanning probe-based methodology to investigate local variations in electronic structure across individual n-doped GaN NWs integrated into a transistor device. We perform scanning microwave microscopy (SMM), which we combine with scanning gate microscopy to determine the free-carrier SMM signal contribution and image local charge carrier density variations. In particular, we find significant variations in free carriers across NWs, with a higher carrier density at the wire facets. By increasing the local carrier density through tip-gating, we find that the tip injects current into the NW with strongly localized current when positioned over the wire vertices. These results suggest that the strong variations in electronic properties observed within NWs have significant implications for device design and may lead to new paths to optimization.

  17. Observation of complete space-charge-limited transport in metal-oxide-graphene heterostructure

    SciTech Connect

    Chen, Wei; Wang, Fei; Fang, Jingyue; Wang, Guang; Qin, Shiqiao; Zhang, Xue-Ao E-mail: xazhang@nudt.edu.cn; Wang, Chaocheng; Wang, Li E-mail: xazhang@nudt.edu.cn

    2015-01-12

    The metal-oxide-graphene heterostructures have abundant physical connotations. As one of the most important physical properties, the electric transport property of the gold-chromium oxide-graphene heterostructure has been studied. The experimental measurement shows that the conductive mechanism is dominated by the space-charge-limited transport, a kind of bulk transport of an insulator with charge traps. Combining the theoretical analysis, some key parameters such as the carrier mobility and trap energy also are obtained. The study of the characteristics of the metal-oxide-graphene heterostructures is helpful to investigate the graphene-based electronic and photoelectric devices.

  18. Carrier transport properties of nanocrystalline Er{sub 3}N@C{sub 80}

    SciTech Connect

    Sun, Yong Maeda, Yuki; Sezaimaru, Hiroki; Sakaino, Masamichi; Kirimoto, Kenta

    2014-07-21

    Electrical transport properties of the nanocrystalline Er{sub 3}N@C{sub 80} with fcc crystal structure were characterized by measuring both temperature-dependent d.c. conductance and a.c. impedance. The results showed that the Er{sub 3}N@C{sub 80} sample has characteristics of n-type semiconductor and an electron affinity larger than work function of gold metal. The Er{sub 3}N@C{sub 80}/Au interface has an ohmic contact behavior and the contact resistance was very small as compared with bulk resistance of the Er{sub 3}N@C{sub 80} sample. The charge carriers in the sample were thermally excited from various trapped levels and both acoustic phonon and ionic scatterings become a dominant process in different temperature regions, respectively. At temperatures below 250 K, the activation energy of the trapped carrier was estimated to be 35.5 meV, and the ionic scattering was a dominant mechanism. On the other hand, at temperatures above 350 K, the activation energy was reduced to 15.9 meV, and the acoustic phonon scattering was a dominant mechanism. In addition, a polarization effect from the charge carrier was observed at low frequencies below 2.0 MHz, and the relative intrinsic permittivity of the Er{sub 3}N@C{sub 80} nanocrystalline lattice was estimated to be 4.6 at frequency of 5.0 MHz.

  19. Critical Slowing Down of the Charge Carrier Dynamics at the Mott Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Hartmann, Benedikt; Zielke, David; Polzin, Jana; Sasaki, Takahiko; Mller, Jens

    2015-05-01

    We report on the dramatic slowing down of the charge carrier dynamics in a quasi-two-dimensional organic conductor, which can be reversibly tuned through the Mott metal-insulator transition (MIT). At the finite-temperature critical end point, we observe a divergent increase of the resistance fluctuations accompanied by a drastic shift of spectral weight to low frequencies, demonstrating the critical slowing down of the order parameter (doublon density) fluctuations. The slow dynamics is accompanied by non-Gaussian fluctuations, indicative of correlated charge carrier dynamics. A possible explanation is a glassy freezing of the electronic system as a precursor of the Mott MIT.

  20. Charge-Carrier Dynamics and Mobilities in Formamidinium Lead Mixed-Halide Perovskites.

    PubMed

    Rehman, Waqaas; Milot, Rebecca L; Eperon, Giles E; Wehrenfennig, Christian; Boland, Jessica L; Snaith, Henry J; Johnston, Michael B; Herz, Laura M

    2015-12-22

    The mixed-halide perovskite FAPb(Bry I1-y )3 is attractive for color-tunable and tandem solar cells. Bimolecular and Auger charge-carrier recombination rate constants strongly correlate with the Br content, y, suggesting a link with electronic structure. FAPbBr3 and FAPbI3 exhibit charge-carrier mobilities of 14 and 27 cm(2) V(-1) s(-1) and diffusion lengths exceeding 1 μm, while mobilities across the mixed Br/I system depend on crystalline phase disorder. PMID:26402226

  1. Semiconductor nanoparticles with spatial separation of charge carriers: synthesis and optical properties

    NASA Astrophysics Data System (ADS)

    Vasiliev, Roman B.; Dirin, Dmitry N.; Gaskov, Alexander M.

    2011-12-01

    The results of studies on core/shell semiconductor nanoparticles with spatial separation of photoexcited charge carriers are analyzed and generalized. Peculiarities of the electronic properties of semiconductor/semiconductor heterojunctions formed inside such particles are considered. Data on the effect of spatial separation of charge carriers on the optical properties of nanoparticles including spectral shifts of the exciton bands, absorption coefficients and electron-hole pair recombination times are presented. Methods of synthesis of core/shell semiconductor nanoparticles in solutions are discussed. Specific features of the optical properties of anisotropic semiconductor nanoparticles with the semiconductor/semiconductor junctions are noted. The bibliography includes 165 references.

  2. Tuning nitrogen species to control the charge carrier concentration in highly doped graphene

    NASA Astrophysics Data System (ADS)

    Scardamaglia, Mattia; Struzzi, Claudia; Osella, Silvio; Reckinger, Nicolas; Colomer, Jean-François; Petaccia, Luca; Snyders, Rony; Beljonne, David; Bittencourt, Carla

    2016-03-01

    Highly nitrogen-doped graphene on copper has been obtained by post-synthesis low-energy ion implantation. Core level and angle resolved photoemission spectroscopies are correlated to link the actual charge carrier doping to the different nitrogen species implanted in the nanostructure. Indeed, we exploit the possibility of controlling the graphitic/pyridinic ratio through thermal heating to tune the charge carrier density; this implicates Dirac cone shifts that are directly correlated to the different doping contribution of the nitrogen species. Supported by density functional theory calculations, we identify graphitic nitrogen as being responsible for n-doping when the amount of counterbalancing pyridinic nitrogen species is reduced upon thermal heating.

  3. The impact of donor-acceptor phase separation on the charge carrier dynamics in pBTTT:PCBM photovoltaic blends.

    PubMed

    Gehrig, Dominik W; Howard, Ian A; Sweetnam, Sean; Burke, Timothy M; McGehee, Michael D; Laquai, Frédéric

    2015-06-01

    The effect of donor-acceptor phase separation, controlled by the donor-acceptor mixing ratio, on the charge generation and recombination dynamics in pBTTT-C14:PC70 BM bulk heterojunction photovoltaic blends is presented. Transient absorption (TA) spectroscopy spanning the dynamic range from pico- to microseconds in the visible and near-infrared spectral regions reveals that in a 1:1 blend exciton dissociation is ultrafast; however, charges cannot entirely escape their mutual Coulomb attraction and thus predominantly recombine geminately on a sub-ns timescale. In contrast, a polymer:fullerene mixing ratio of 1:4 facilitates the formation of spatially separated, that is free, charges and reduces substantially the fraction of geminate charge recombination, in turn leading to much more efficient photovoltaic devices. This illustrates that spatially extended donor or acceptor domains are required for the separation of charges on an ultrafast timescale (<100 fs), indicating that they are not only important for efficient charge transport and extraction, but also critically influence the initial stages of free charge carrier formation. PMID:25857289

  4. Exciton transport, charge extraction, and loss mechanisms in organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Scully, Shawn Ryan

    Organic photovoltaics have attracted significant interest over the last decade due to their promise as clean low-cost alternatives to large-scale electric power generation such as coal-fired power, natural gas, and nuclear power. Many believe power conversion efficiency targets of 10-15% must be reached before commercialization is possible. Consequently, understanding the loss mechanisms which currently limit efficiencies to 4-5% is crucial to identify paths to reach higher efficiencies. In this work, we investigate the dominant loss mechanisms in some of the leading organic photovoltaic architectures. In the first class of architectures, which include planar heterojunctions and bulk heterojunctions with large domains, efficiencies are primarily limited by the distance photogenerated excitations (excitons) can be transported (termed the exciton diffusion length) to a heterojunction where the excitons may dissociate. We will discuss how to properly measure the exciton diffusion length focusing on the effects of optical interference and of energy transfer when using fullerenes as quenching layers and show how this explains the variety of diffusion lengths reported for the same material. After understanding that disorder and defects limit exciton diffusion lengths, we suggest some approaches to overcome this. We then extensively investigate the use of long-range resonant energy transfer to increase exciton harvesting. Using simulations and experiments as support, we discuss how energy transfer can be engineered into architectures to increase the distance excitons can be harvested. In an experimental model system, DOW Red/PTPTB, we will show how the distance excitons are harvested can be increased by almost an order of magnitude up to 27 nm from a heterojunction and give design rules and extensions of this concept for future architectures. After understanding exciton harvesting limitations we will look at other losses that are present in planar heterojunctions. One of the primary losses that puts stringent requirements on the charge carrier mobilities in these cells is the recombination losses due to space charge build up at the heterojunction. Because electrons are confined to the acceptor and holes to the donor, net charge density always exists even when mobilities are matched, in contrast to bulk heterojunctions wherein matched mobilities lead to zero net charge. This net charge creates an electric field which opposes the built-in field and limits the current that can be carried away from this heterojunction. Using simulations we show that for relevant current densities charge carrier mobilities must be higher than 10-4 cm2/V.s to avoid significant losses due to space charge formation. In the last part of this work, we will focus on the second class of architectures in which exciton harvesting is efficient. We will present a systematic analysis of one of the leading polymer:fullerene bulk heterojunction cells to show that losses in this architecture are due to charge recombination. Using optical measurements and simulations, exciton harvesting measurements, and device characteristics we will show that the dominant loss is likely due to field-dependent geminate recombination of the electron and hole pair created immediately following exciton dissociation. No losses in this system are seen due to bimolecular recombination or space charge which provides information on charge-carrier mobility targets necessary for the future design of high efficiency organic photovoltaics.

  5. Charge Carrier Lifetimes Exceeding 15 μs in Methylammonium Lead Iodide Single Crystals.

    PubMed

    Bi, Yu; Hutter, Eline M; Fang, Yanjun; Dong, Qingfeng; Huang, Jinsong; Savenije, Tom J

    2016-03-01

    The charge carrier lifetime in organic-inorganic perovskites is one of the most important parameters for modeling and design of solar cells and other types of devices. In this work, we use CH3NH3PbI3 single crystal as a model system to study optical absorption, charge carrier generation, and recombination lifetimes. We show that commonly applied photoluminescence lifetime measurements may dramatically underestimate the intrinsic carrier lifetime in CH3NH3PbI3, which could be due to severe charge recombination at the crystal surface and/or fast electron-hole recombination close to the surface. By using the time-resolved microwave conductivity technique, we investigated the lifetime of free mobile charges inside the crystals. Most importantly, we find that for homogeneous excitation throughout the crystal, the charge carrier lifetime exceeds 15 μs. This means that the diffusion length in CH3NH3PbI3 can be as large as 50 μm if it is no longer limited by the dimensions of the crystallites. PMID:26901658

  6. Unified electronic charge transport model for organic solar cells

    NASA Astrophysics Data System (ADS)

    Mottaghian, Seyyed Sadegh; Biesecker, Matt; Bayat, Khadijeh; Farrokh Baroughi, Mahdi

    2013-07-01

    This paper provides a comprehensive modeling approach for simulation of electronic charge transport in excitonic solar cells with organic and organic/inorganic structures. Interaction of energy carrying particles (electrons, holes, singlet excitons, and triplet excitons) with each other and their transformation in the bulk of the donor and acceptor media as well as the donor/acceptor interfaces are incorporated in form of coupling matrices into the continuity equations and interface boundary conditions. As a case study, the model is applied to simulate an organic bilayer photovoltaic (PV) device to quantify the effects of photo generation, recombination coefficient, carrier mobility, and electrode work function on its PV characteristics. The study proves that electron-hole recombination at the donor/acceptor interface is the dominant mechanism that limits open circuit voltage of the device.

  7. Charge Carrier Dynamics in Transition Metal Oxides Studied by Femtosecond Transient Extreme Ultraviolet Absorption Spectroscopy

    NASA Astrophysics Data System (ADS)

    Jiang, Chang-Ming

    With the ability to disentangle electronic transitions that occur on different elements and local electronic structures, time-resolved extreme ultraviolet (XUV) spectroscopy has emerged as a powerful tool for studying ultrafast dynamics in condensed phase systems. In this dissertation, a visible-pump/XUV-probe transient absorption apparatus with femtosecond resolution was constructed to investigate the carrier relaxation dynamics in semiconductors after photo-excitation. This includes timescales for carrier thermalization by carrier-carrier and carrier-phonon scattering. The 30 -- 72 eV photon energy coverage (17 -- 40 nm wavelength) generated by a table-top XUV light source is suitable for probing the 3p-to-3d core level absorptions of various transition metal oxides (TMOs) with specificities to elements and oxidation states. In Chapter 1, a brief introduction to charge carrier dynamics in semiconductor-based materials is given. In addition, fundamentals of core-level spectroscopy and the high harmonic generation (HHG) process are also addressed in this introductory chapter. Specifications of the experimental apparatus that was constructed are summarized in Chapter 2, including the design concepts and characterization of performance. Chapter 3 presents the spectral tunability of the XUV pulses generated from a semi-infinite gas cell (SIGC), as well as the data acquisition procedures. Charge carrier relaxation dynamics in Co3O4 following the charge transfer excitation pathway at 400 nm are documented in Chapter 4. In Chapter 5, various visible pump wavelengths are used to excite Co3O4 and the differences in the carrier dynamics versus excitation wavelength are considered. After selectively photoexciting a Si/TiO2 heterojunction, the resulted electron transfer process is observed and reported in Chapter 6. The concluding remarks of the dissertation are made in Chapter 7, while several ongoing time-resolved experiments are addressed in the Appendix sections.

  8. Matrix engineering, state filling, and charge transport in PbSe quantum dot solids

    NASA Astrophysics Data System (ADS)

    Law, Matt

    Colloidal semiconductor quantum dots (QDs) are attractive building blocks for solar photovoltaics (PV). In this talk, I will highlight our recent progress in designing PbX (X = S, Se, Te) QD thin film absorbers for next-generation PV. Basic requirements for QD absorber layers include efficient light absorption, charge separation, charge transport, and long-term stability. I begin by discussing QD film fabrication, charge transport physics, insights from theory, and evidence that the carrier diffusion length is short and limited by electronic states in the QD band gap. Studies of carrier mobility as a function of basic film parameters such as inter-QD spacing, QD size, and QD size distribution have led to a better understanding of charge transport within highly disordered QD films. Efforts to improve carrier mobility by enhancing inter-dot electronic coupling, passivating surface states, and implementing surface doping will be highlighted. Engineering the inter-QD matrix to produce QD/inorganic or QD/organic nanocomposites is presented as a powerful way to optimize coupling, remove surface states, eliminate hysteretic charge trapping and ion motion, and achieve long-term environmental stability for high-performance, robust QD films that feature good carrier multiplication efficiency. New results on the use of atomic layer deposition infilling of QD films to yield all-inorganic QD transistors free of the bias-stress effect will be presented, and the likely role of ion transport in QD optoelectronics discussed. The use of infrared transmission spectroscopy to understand state filling and study charge transport in QD thin film transistors will be presented.

  9. Charge and Spin Transport in Dilute Magnetic Semiconductors

    SciTech Connect

    Ullrich, Carsten A.

    2009-07-23

    This proposal to the DOE outlines a three-year plan of research in theoretical and computational condensed-matter physics, with the aim of developing a microscopic theory for charge and spin dynamics in disordered materials with magnetic impurities. Important representatives of this class of materials are the dilute magnetic semiconductors (DMS), which have attracted great attention as a promising basis for spintronics devices. There is an intense experimental effort underway to study the transport properties of ferromagnetic DMS such as (Ga,Mn)As, and a number of interesting features have emerged: negative magnetoresistance, anomalous Hall effect, non-Drude dynamical conductivity, and resistivity maxima at the Curie temperature. Available theories have been able to account for some of these features, but at present we are still far away from a systematic microscopic understanding of transport in DMS. We propose to address this challenge by developing a theory of charge and spin dynamics based on a combination of the memory-function formalism and time-dependent density functional theory. This approach will be capable of dealing with two important issues: (a) the strong degree of correlated disorder in DMS, close to the localization transition (which invalidates the usual relaxation-time approximation to the Boltzmann equation), (b) the essentially unknown role of dynamical many-body effects such as spin Coulomb drag. We will calculate static and dynamical conductivities in DMS as functions of magnetic order and carrier density, which will advance our understanding of recent transport and infrared absorption measurements. Furthermore, we will study collective plasmon excitations in DMS (3D, 2D and quantum wells), whose linewidths could constitute a new experimental probe of the correlation of disorder, many-body effects and charge and spin dynamics in these materials.

  10. Photoinduced Dedoping of Conducting Polymers: An Approach to Precise Control of the Carrier Concentration and Understanding Transport Properties.

    PubMed

    Wei, Qingshuo; Mukaida, Masakazu; Kirihara, Kazuhiro; Naitoh, Yasuhisa; Ishida, Takao

    2016-01-27

    Exploring the various applications of conjugated polymers requires systematic studies of their physical properties as a function of the doping density, which, consequently, calls for precise control of their doping density. In this study, we report a novel solid-state photoinduced charge-transfer reaction that dedopes highly conductive polyelectrolyte complexes such as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate). Varying the UV-irradiation time of this material allows the carrier density inside the film to be precisely controlled over more than 3 orders of magnitude. We extract the carrier density, carrier mobility, and Seebeck coefficient at different doping levels to obtain a clear image of carrier-transport mechanisms. This approach not only leads to a better understanding of the physical properties of the conducting polymer but also is useful for developing applications requiring patterned, large-area conducting polymers. PMID:26734776

  11. 14 CFR 206.4 - Exemption of air carriers for military transportation.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 4 2013-01-01 2013-01-01 false Exemption of air carriers for military transportation. 206.4 Section 206.4 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION... AUTHORIZATIONS AND EXEMPTIONS § 206.4 Exemption of air carriers for military transportation. Air...

  12. 14 CFR 206.4 - Exemption of air carriers for military transportation.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 4 2012-01-01 2012-01-01 false Exemption of air carriers for military transportation. 206.4 Section 206.4 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION... AUTHORIZATIONS AND EXEMPTIONS § 206.4 Exemption of air carriers for military transportation. Air...

  13. 14 CFR 206.4 - Exemption of air carriers for military transportation.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false Exemption of air carriers for military transportation. 206.4 Section 206.4 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION... AUTHORIZATIONS AND EXEMPTIONS § 206.4 Exemption of air carriers for military transportation. Air...

  14. 14 CFR 206.4 - Exemption of air carriers for military transportation.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 4 2014-01-01 2014-01-01 false Exemption of air carriers for military transportation. 206.4 Section 206.4 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION... AUTHORIZATIONS AND EXEMPTIONS § 206.4 Exemption of air carriers for military transportation. Air...

  15. Sodium transport by an ionizable and a neutral mobile carrier: effects of membrane structure on the apparent activation energy.

    PubMed

    Vareille, G; Marion, P; Kraus, J L; Castaing, M

    1993-02-23

    Temperature-jump relaxation experiments on Na+ transport by (221)C10-cryptand (ionizable mobile carrier) and nonactin (neutral mobile carrier) were carried out in order to study the effects of cholesterol and the degree of acyl chain unsaturation, and their temperature-dependence on ion transport through thin lipid membranes. The experiments were performed on large, negatively charged unilamellar vesicles (LUV) prepared from mixtures of phosphatidylcholine (egg phosphatidylcholine, dioleoylphosphatidylcholine and dilinoleolylphosphatidylcholine), phosphatidic acid and cholesterol (mole fractions 0-0.43), at various temperatures and carrier concentrations. The apparent rate constants of Na+ translocation by (221)C10 and nonactin increased with the carrier concentration, the degree of acyl chain unsaturation and the temperature. The incorporation of cholesterol into the membranes significantly reduced the carrier concentration-, acyl chain unsaturation- and temperature-dependence of this parameter. The apparent energy required to activate the transport decreased significantly with increasing (221)C10 concentrations and remained constant with increasing those of nonactin at any given cholesterol molar fraction and degree of acyl chain unsaturation. It increased significantly with increasing the cholesterol molar fraction at any given carrier concentration to an extent depending on the degree of acyl chain unsaturation. Our interpretation of the action of cholesterol on these transport systems is based on the assumption that the adsorption plane of Na(+)-(221)C10 and Na(+)-nonactin complexes is likely to be located towards the aqueous and the hydrocarbon side of the dipole layer, respectively. The results are discussed in terms of the structural, physico-chemical and electrical characteristics of carriers and complexes, and of the interactions occurring between an ionizable or a neutral mobile carrier and the membrane. PMID:8443224

  16. Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots

    SciTech Connect

    Sizov, D. S. Zavarin, E. E.; Ledentsov, N. N.; Lundin, V. V.; Musikhin, Yu. G.; Sizov, V. S.; Suris, R. A.; Tsatsul'nikov, A. F.

    2007-05-15

    Electronic and optical properties of ensembles of quantum dots with various energies of activation from the ground-state level to the continuous-spectrum region were studied theoretically and experimentally with the InGaN quantum dots as an example. It is shown that, depending on the activation energy, both the quasi-equilibrium statistic of charge carriers at the levels of quantum dots and nonequilibrium statistic at room temperature are possible. In the latter case, the position of the maximum in the emission spectrum is governed by the value of the demarcation transition: the quantum dots with the transition energy higher than this value feature the quasi-equilibrium population of charge carriers, while the quantum dots with the transition energy lower than the demarcation-transition energy feature the nonequilibrium population. A model based on kinetic equations was used in the theoretical analysis. The key parameters determining the statistic are the parameters of thermal ejection of charge carriers; these parameters depend exponentially on the activation energy. It is shown experimentally that the use of stimulated phase decomposition makes it possible to appreciably increase the activation energy. In this case, the thermal-activation time is found to be much longer than the recombination time for an electron-hole pair, which suppresses the redistribution of charge carriers between the quantum dots and gives rise to the nonequilibrium population. The effect of nonequilibrium population on the luminescent properties of the structures with quantum dots is studied in detail.

  17. Tuning The Optical, Charge Injection, and Charge Transport Properties of Organic Electronic Devices

    NASA Astrophysics Data System (ADS)

    Zalar, Peter

    Since the early 1900's, synthetic insulating polymers (plastics) have slowly taken over the role that traditional materials like wood or metal have had as basic components for construction, manufactured goods, and parts. Plastics allow for high throughput, low temperature processing, and control of bulk properties through molecular modifications. In the same way, pi-conjugated organic molecules are emerging as a possible substitute for inorganic materials due to their electronic properties. The semiconductive nature of pi-conjugated materials make them an attractive candidate to replace inorganic materials, primarily due to their promise for low cost and large-scale production of basic semiconducting devices such as light-emitting diodes, solar cells, and field-effect transistors. Before organic semiconductors can be realized as a commercial product, several hurdles must be cleared. The purpose of this dissertation is to address three distinct properties that dominate the functionality of devices harnessing these materials: (1) optical properties, (2) charge injection, and (3) charge transport. First, it is shown that the electron injection barrier in the emissive layer of polymer light-emitting diodes can be significantly reduced by processing of novel conjugated oligoelectrolytes or deoxyribonucleic acid atop the emissive layer. Next, the charge transport properties of several polymers could be modified by processing them from solvents containing small amounts of additives or by using regioregular and enantiopure chemical structures. It is then demonstrated that the optical and electronic properties of Lewis basic polymer structures can be readily modified by interactions with strongly electron-withdrawing Lewis acids. Through red-shifted absorption, photoluminescence, and electroluminescence, a single pi-conjugated backbone can be polychromatic. In addition, interaction with Lewis acids can remarkably p-dope the hole transport of the parent polymer, leading to a two-orders of magnitude increase in the hole mobility. Finally, the hole, electron, and double carrier transport in solar cell devices are studied in a bid to examine the correlations between bulk morphologies and free carrier recombination. The sum of these works help to create new pathways for the synthesis and design of new pi-conjugated materials and device architectures. All of this is in hopes of achieving higher performance and more stable devices to rival inorganic systems.

  18. Hybrid Perovskites for Photovoltaics: Charge-Carrier Recombination, Diffusion, and Radiative Efficiencies.

    PubMed

    Johnston, Michael B; Herz, Laura M

    2016-01-19

    Photovoltaic (PV) devices that harvest the energy provided by the sun have great potential as renewable energy sources, yet uptake has been hampered by the increased cost of solar electricity compared with fossil fuels. Hybrid metal halide perovskites have recently emerged as low-cost active materials in PV cells with power conversion efficiencies now exceeding 20%. Rapid progress has been achieved over only a few years through improvements in materials processing and device design. In addition, hybrid perovskites appear to be good light emitters under certain conditions, raising the prospect of applications in low-cost light-emitting diodes and lasers. Further optimization of such hybrid perovskite devices now needs to be supported by a better understanding of how light is converted into electrical currents and vice versa. This Account provides an overview of charge-carrier recombination and mobility mechanisms encountered in such materials. Optical-pump-terahertz-probe (OPTP) photoconductivity spectroscopy is an ideal tool here, because it allows the dynamics of mobile charge carriers inside the perovskite to be monitored following excitation with a short laser pulse whose photon energy falls into the range of the solar spectrum. We first review our insights gained from transient OPTP and photoluminescence spectroscopy on the mechanisms dominating charge-carrier recombination in these materials. We discuss that mono-molecular charge-recombination predominantly originates from trapping of charges, with trap depths being relatively shallow (tens of millielectronvolts) for hybrid lead iodide perovskites. Bimolecular recombination arises from direct band-to-band electron-hole recombination and is found to be in significant violation of the simple Langevin model. Auger recombination exhibits links with electronic band structure, in accordance with its requirement for energy and momentum conservation for all charges involved. We further discuss charge-carrier mobility values extracted from OPTP measurements and their dependence on perovskite composition and morphology. The significance of the reviewed charge-carrier recombination and mobility parameters is subsequently evaluated in terms of the charge-carrier diffusion lengths and radiative efficiencies that may be obtained for such hybrid perovskites. We particularly focus on calculating such quantities in the limit of ultra-low trap-related recombination, which has not yet been demonstrated but could be reached through further advances in material processing. We find that for thin films of hybrid lead iodide perovskites with typical charge-carrier mobilities of ∼30cm(2)/(V s), charge-carrier diffusion lengths at solar (AM1.5) irradiation are unlikely to exceed ∼10 μm even if all trap-related recombination is eliminated. We further examine the radiative efficiency for hybrid lead halide perovskite films and show that if high efficiencies are to be obtained for intermediate charge-carrier densities (n ≈ 10(14) cm(-3)) trap-related recombination lifetimes will have to be enhanced well into the microsecond range. PMID:26653572

  19. Electrical currents associated with nucleotide transport by the reconstituted mitochondrial ADP/ATP carrier.

    PubMed

    Brustovetsky, N; Becker, A; Klingenberg, M; Bamberg, E

    1996-01-23

    The electrophoretic export of ATP against the import of ADP in mitochondria bridges the intra- versus extramitochondrial ATP potential gap. Here we report that the electrical nature of the ADP/ATP exchange by the mitochondrial ADP/ATP carrier (AAC) can be directly studied by measuring the electrical currents via capacitive coupling of AAC-containing vesicles on a planar lipid membrane. The currents were induced by the rapid liberation of ATP or ADP with UV flash photolysis from caged nucleotides. Six different transport modes of the AAC were studied: heteroexchange with either ADP or ATP inside the vesicles, initiated by photolysis of caged ATP or ADP; homoexchange with ADPex/ADPin or ATPex/ATPin; and caged ADP or ATP with unloaded vesicles. The heteroexchange produced the largest currents with the longest duration in line with the electrical charge difference ATP4- versus ADP3-. Surprisingly, also in the homoexchange and with unloaded vesicles, small currents were measured with shorter duration. In all three modes with caged ATP, a negative charge moved into the vesicles and with caged ADP it moved out of the vesicles. All currents were completely inhibited by a mixture of the inhibitors of the AAC, carboxyatractyloside and hongkrekate, which proves that the currents are exclusively due to AAC function. The observed charge movements in the heteroexchange system agree with the prediction from transport studies in mitochondria and reconstituted vesicles. The unexpected charge movements in the homoexchange or unloaded systems are interpreted to reveal transmembrane rearrangements of charged sites in the AAC when occupied with ADP or ATP. The results also indicate that not only ATP4- but also ADP3- contribute, albeit in opposite direction, to the electrical nature of the ADP/ATP exchange, which is at variance with former conclusions from biochemical transport studies. These measurements open up new avenues of studying the electrical interactions of ADP and ATP with the AAC. PMID:8570612

  20. Universal crossover of the charge carrier fluctuation mechanism in different polymer/carbon nanotubes composites

    NASA Astrophysics Data System (ADS)

    Barone, C.; Landi, G.; Mauro, C.; Neitzert, H. C.; Pagano, S.

    2015-10-01

    Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions deriving from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density.

  1. Universal crossover of the charge carrier fluctuation mechanism in different polymer/carbon nanotubes composites

    SciTech Connect

    Barone, C. Mauro, C.; Pagano, S.; Landi, G.; Neitzert, H. C.

    2015-10-05

    Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions deriving from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density.

  2. Mapping the spatial distribution of charge carriers in quantum-confined heterostructures

    PubMed Central

    Smith, Andrew M.; Lane, Lucas A.; Nie, Shuming

    2014-01-01

    Quantum-confined nanostructures are considered ‘artificial atoms’ because the wavefunctions of their charge carriers resemble those of atomic orbitals. For multiple-domain heterostructures, however, carrier wavefunctions are more complex and still not well understood. We have prepared a unique series of cation-exchanged HgxCd1−xTe quantum dots (QDs) and seven epitaxial core–shell QDs and measured their first and second exciton peak oscillator strengths as a function of size and chemical composition. A major finding is that carrier locations can be quantitatively mapped and visualized during shell growth or cation exchange simply using absorption transition strengths. These results reveal that a broad range of quantum heterostructures with different internal structures and band alignments exhibit distinct carrier localization patterns that can be used to further improve the performance of optoelectronic devices and enhance the brightness of QD probes for bioimaging. PMID:25080298

  3. Strain engineering the charged-impurity-limited carrier mobility in phosphorene

    NASA Astrophysics Data System (ADS)

    Mohammadi, Yawar; Nia, Borhan Arghavani

    2016-01-01

    We investigate, based on the tight-binding model and in the linear deformation regime, the strain dependence of the electronic band structure of phosphorene, exposed to a uniaxial strain in one of its principle directions, the normal, the armchair and the zigzag directions. We show that the electronic band structure of strained phosphorene, for the experimentally accessible carrier densities and the uniaxial strains, is well described by a strain-dependent decoupled electron-hole Hamiltonian. Then, employing the decoupled Hamiltonian, we consider the strain dependence of the charged-impurity-limited carrier mobility in phosphorene, for both types of carriers, arbitrary carrier densities and in both armchair and zigzag directions. We show that a uniaxial tensile (compressive) strain in the normal direction enhances (weakens) the anisotropy of the carrier mobility, while a uniaxial strain in the zigzag direction acts inversely. Moreover applying a uniaxial strain in the armchair direction is shown to be ineffective on the anisotropy of the carrier mobility. These will be explained based on the effects of the strains on the carrier effective masses.

  4. Investigating and Optimizing Carrier Transport, Carrier Distribution, and Efficiency Droop in GaN-based Light-emitting Diodes

    NASA Astrophysics Data System (ADS)

    Zhu, Di

    2011-12-01

    The recent tremendous boost in the number and diversity of applications for light-emitting diodes (LEDs) indicates the emergence of the next-generation lighting and illumination technology. The rapidly improving LED technology is becoming increasingly viable especially for high-power applications. However, the greatest roadblock before finally breaching the main defensive position of conventional fluorescent and incandescent lamps still remains: GaN-based LEDs encounter a significant decrease in efficiency as the drive current increases, and this phenomenon is known as the efficiency droop. This dissertation focuses on uncovering the physical cause of efficiency droop in GaN-based LEDs and looks for solutions to it. GaN-based multiple-quantum-well (MQW) LEDs usually have abnormally high diode-ideality factors. Investigating the origin of the high diode-ideality factors could help to better understand the carrier transport in the LED MQW active region. We investigate the ideality factors of GaInN LEDs with different numbers of doped quantum barriers (QBs). Consistent with the theory, a decrease of the ideality factor as well as a reduction in forward voltage is found with increasing number of doped QBs. Experimental and simulation results indicate that the band profiles of QBs in the active region have a significant impact on the carrier transport mechanism, and the unipolar heterojunctions inside the active region play an important role in determining the diode-ideality factor. This dissertation will discuss several mechanisms leading to electron leakage which could be responsible for the efficiency droop. We show that the inefficient electron capture, the electron-attracting properties of polarized EBL, the inherent asymmetry in electron and hole transport and the inefficient EBL p-doping at high Al contents severely limit the ability to confine electrons to the MQWs. We demonstrate GaInN LEDs employing tailored Si doping in the QBs with strongly enhanced high-current efficiency and reduced efficiency droop. Compared with 4-QB-doped LEDs, 1-QB-doped LEDs show a 37.5% increase in light-output power at high currents. Consistent with the measurements, simulation shows a shift of radiative recombination among the MQWs and a reduced electron leakage current into the p-type GaN when fewer QBs are doped. The results can be attributed to a more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop. In this dissertation, artificial evolution is introduced to the LED optimization process which combines a genetic algorithm (GA) and device-simulation software. We show that this approach is capable of generating novel concepts in designing and optimizing LED devices. Application of the GA to the QB-doping in the MQWs yields optimized structures which is consistent with the tailored QB doping experiments. Application of the GA to the EBL region suggests a novel structure with an inverted sheet charge at the spacer-EBL interface. The resulting repulsion of electrons can significantly reduce electron leakage and enhance the efficiency. Finally, dual-wavelength LEDs, which have two types of quantum wells (QWs) emitting at two different wavelengths, are experimentally characterized and compared with numerical simulations. These dual-wavelength LEDs allow us to determine which QW emits most of the light. An experimental observation and a quantitative analysis of the radiative recombination shift within the MQW active region are obtained. In addition, an injection-current dependence of the radiative recombination shift is predicted by numerical simulations and indeed observed in dual-wavelength LEDs. This injection-current dependence of the radiative recombination distribution can be explained very well by incorporating quantum-mechanical tunneling of carriers into and through the QBs into to the classical drift-diffusion model. In summary, using the LEDs with tailored QB doping and dual-wavelength LEDs, we investigate the origin of the high diode-ideality factor of LEDs and gain insight on the control of carrier transport, carrier distribution, and radiative recombination in the LED MQW active region. Our results provide solid evidence on the effectiveness of the GA in the LED device optimization process. In addition, the innovative EBL structure optimized by the GA sheds light on further paths for the optimization of LED design. Our results are the starting point of applying artificial evolution to practical semiconductor devices, opening new perspectives for complex semiconductor device optimization and enabling breakthroughs in high-performance LED design.

  5. Elastic tunneling charge transport mechanisms in silicon quantum dots / Si O 2 thin films and superlattices

    NASA Astrophysics Data System (ADS)

    Illera, S.; Prades, J. D.; Cirera, A.

    2015-05-01

    The role of different charge transport mechanisms in Si / Si O 2 structures has been studied. A theoretical model based on the Transfer Hamiltonian Formalism has been developed to explain experimental current trends in terms of three different elastic tunneling processes: (1) trap assisted tunneling; (2) transport through an intermediate quantum dot; and (3) direct tunneling between leads. In general, at low fields carrier transport is dominated by the quantum dots whereas, for moderate and high fields, transport through deep traps inherent to the SiO2 is the most relevant process. Besides, current trends in Si / Si O 2 superlattice structure have been properly reproduced.

  6. Simultaneous Electronic and Ionic Charge Transport in Poly(3-hexylthiophene)-b-Poly(ethylene oxide)

    NASA Astrophysics Data System (ADS)

    Patel, Shrayesh; Javier, Anna; Balsara, Nitash

    2011-03-01

    Block copolymers can self-assemble to distinct channels, which allows for simultaneous transport of electronic and ionic charge carriers. A potential polymer system is Poly(3-hexylthiophene)-b-Poly(ethylene oxide) (P3HT-b-PEO). P3HT serves as the electronic conducting channel while the PEO serves as the ionic conducting channel. Both conductive blocks are doped to induce simultaneous electronic and ionic conduction. The PEO phase is doped with LiTFSI while the P3HT is doped with F4 TCNQ, which generates hole carriers. In addition, we take into account the case where no electronic dopant is added to P3HT phase. The charge transport properties of the material are analyzed via ac impedance spectroscopy and dc polarization techniques. These experiments provide decoupled electronic and ionic transport in P3HT-b-PEO.

  7. Tunable spin and charge transport in silicene nanoribbons

    NASA Astrophysics Data System (ADS)

    Shakouri, Kh.; Simchi, H.; Esmaeilzadeh, M.; Mazidabadi, H.; Peeters, F. M.

    2015-07-01

    Using the tight-binding formalism, we study spin and charge transport through a zigzag silicene ribbon subject to an external electric field Ez. The effect of an exchange field Mz is also taken into account and its consequences on the band structure as well as spin transport are evaluated. We show that the band structure lacks spin inversion symmetry in the presence of intrinsic spin-orbit interaction in combination of Ez and Mz fields. Our quantum transport calculations indicate that for certain energy ranges of the incoming electrons the silicene ribbon can act as a controllable high-efficiency spin polarizer. The polarization maxima occur simultaneously with the van Hove singularities of the local density of states. In this case, the combination of electric and exchange fields is the key to achieving nearly perfect spin polarization, which also leads to the appearance of additional narrow plateaus in the quantum conductance. Moreover, we demonstrate that the output current still remains completely spin-polarized for low-energy carriers even when a few edge vacancies are present.

  8. Interface Charge Transport in Organic Transistors as Investigated by Field-Induced Electron Spin Resonance

    NASA Astrophysics Data System (ADS)

    Hasegawa, Tatsuo

    2013-03-01

    Most of high-performance organic thin-film transistors (OTFTs) as recently developed is attainable with non-doped, single-component π-conjugated materials that exhibit high layer crystallinity both for small-molecules and polymers. The layer crystallinity is quite suitable to compose channel transport layers of the OTFTs, although the main origin to hinder the charge transport or the intrinsic carrier mobility is still controversial; intra- or intermolecular electron-phonon coupling, polarization effects by the gate-dielectrics, or thermal or extrinsic disorder effects. Here we discuss the interface charge transport in the OTFTs, as investigated by field-induced electron spin resonance (FESR) technique that probes 1/2 spin of carriers induced by gate voltage. It is shown that the FESR technique is extremely useful especially for OTFTs, because of the fairly small spin-orbit interactions in organic materials as well as of the high layer crystallinity and the anisotropy. The following important aspects of the interface charge transport are presented and discussed: (1) Carrier motion in OTFTs can be understood in terms of the multiple trap-and-release (MTR) transport. The analyses of the motional narrowing effects allow us to estimate the average trap residence time that reaches about 1 ns. (2) Carriers are frozen at the respective trap sites at low temperature. The low-temperature spectral analyses allow us to obtain the distribution of trapped carriers over their degree of localization. (3) We also developed a unique technique to investigate the intra- and inter-domain transport in polycrystalline OTFTs by using anisotropic FESR measurements. The method allows us to evaluate the potential barrier height at the domain boundaries within the films.

  9. Exciton shelves for charge and energy transport in third-generation quantum-dot devices

    NASA Astrophysics Data System (ADS)

    Goodman, Samuel; Singh, Vivek; Noh, Hyunwoo; Casamada, Josep; Chatterjee, Anushree; Cha, Jennifer; Nagpal, Prashant

    2014-03-01

    Quantum dots are semiconductor nanocrystallites with size-dependent quantum-confined energy levels. While they have been intensively investigated to utilize hot-carriers for photovoltaic applications, to bridge the mismatch between incident solar photons and finite bandgap of semiconductor photocells, efficient charge or exciton transport in quantum-dot films has proven challenging. Here we show development of new coupled conjugated molecular wires with ``exciton shelves'', or different energy levels, matched with the multiple energy levels of quantum dots. Using single nanoparticle and ensemble device measurements we show successful extraction and transport of both bandedge and high-energy charge carriers, and energy transport of excitons. We demonstrate using measurements of electronic density of states, that careful matching of energy states of quantum-dot with molecular wires is important, and any mismatch can generate midgap states leading to charge recombination and reduced efficiency. Therefore, these exciton-shelves and quantum dots can lead to development of next-generation photovoltaic and photodetection devices using simultaneous transport of bandedge and hot-carriers or energy transport of excitons in these nanostructured solution-processed films.

  10. 49 CFR 385.13 - Unsatisfactory rated motor carriers; prohibition on transportation; ineligibility for Federal...

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ..., a motor carrier rated “unsatisfactory” is prohibited from operating a CMV. Information on motor... materials in quantities requiring placarding, and motor carriers transporting passengers in a CMV, are prohibited from operating a CMV in motor carrier operations in commerce beginning on the 46th day after...

  11. 49 CFR 385.13 - Unsatisfactory rated motor carriers; prohibition on transportation; ineligibility for Federal...

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ..., a motor carrier rated “unsatisfactory” is prohibited from operating a CMV. Information on motor... materials in quantities requiring placarding, and motor carriers transporting passengers in a CMV, are prohibited from operating a CMV in motor carrier operations in commerce beginning on the 46th day after...

  12. Valley-symmetry-preserved transport in ballistic graphene layers with gate-defined carrier guiding

    NASA Astrophysics Data System (ADS)

    Kim, Minsoo; Choi, Ji-Hae; Lee, Sang-Hoon; Watanabe, Kenji; Taniguchi, Takashi; Jhi, Seung-Hoon; Lee, Hu-Jong

    Zigzag graphene nanoribbons are predicted to exhibit interesting electronic properties stemming from its Dirac band structure. However, to date, investigation of them is highly limited because of the defects and the roughness at the edges, which mix different valley properties of graphene. Here, we report the signature of conservation of valley symmetry in two types of quasi-1D ballistic graphene transport devices; one is a quantum point contact (QPC) and another is an Aharonov-Bohm (AB) interferometer. In measurements, charge carriers were confined in a potential well formed by the dual gates operation and the four-terminal magnetoconductance (MC) was measured with varying the carrier density, dc bias, and temperature. It exhibits the conductance quantization in steps of ΔG = 4e2/ h starting from G = (2, 6), 10 ×e2 / h in a constricted conducting channel of QPC-type devices. This behavior is similar to the one observed in zigzag graphene nanoribbons having edge localized channels. Our tight-binding calculation shows that quasi-1D charge flow on a graphene plane acts a zigzag-type nanoribbon, unless it is perfectly aligned along the armchair direction. In the AB interferometry, we observed h/ e periodic modulation of MC and the zero-field conductance minimum with a negative MC background.

  13. Microstructure defects mediated charge transport in Nb-doped epitaxial BaTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Zhou, Jian; Jing, Xiaosai; Alexe, Marin; Dai, Jiyan; Qin, Minghui; Wu, Sujuan; Zeng, Min; Gao, Jinwei; Lu, Xubing; Liu, J.-M.

    2016-05-01

    Nb-doped BaTiO3 (BNTO) films were deposited on MgO substrates at different substrate temperatures by pulsed laser deposition. The temperature dependence of their resistivity, carrier mobility and carrier concentration were systematically investigated. It reveals that the BNTO films deposited at lower temperature show higher resistivity and lower carrier mobility, and only show semiconductor characteristics at measurement temperatures ranging from 10 to 400 K. There is a metal-semiconductor transition at about 20 K for the films grown at relatively higher temperature. The intrinsic mechanism responsible for the different charge transport behavior was revealed by microstructure studies. Low crystal quality and high density of microstructure defects, observed for BNTO films grown at low temperatures, are, in particular, massively affecting the charge transport behavior of the BNTO films. The mediated charge transport of the microstructure defects is dominated by the thermal excitation process.

  14. Electrode configuration and signal subtraction technique for single polarity charge carrier sensing in ionization detectors

    DOEpatents

    Luke, Paul

    1996-01-01

    An ionization detector electrode and signal subtraction apparatus and method provides at least one first conductive trace formed onto the first surface of an ionization detector. The first surface opposes a second surface of the ionization detector. At least one second conductive trace is also formed on the first surface of the ionization detector in a substantially interlaced and symmetrical pattern with the at least one first conductive trace. Both of the traces are held at a voltage potential of a first polarity type. By forming the traces in a substantially interlaced and symmetric pattern, signals generated by a charge carrier are substantially of equal strength with respect to both of the traces. The only significant difference in measured signal strength occurs when the charge carrier moves to within close proximity of the traces and is received at the collecting trace. The measured signals are then subtracted and compared to quantitatively measure the magnitude of the charge and to determine the position at which the charge carrier originated within the ionization detector.

  15. Electrode configuration and signal subtraction technique for single polarity charge carrier sensing in ionization detectors

    DOEpatents

    Luke, P.

    1996-06-25

    An ionization detector electrode and signal subtraction apparatus and method provide at least one first conductive trace formed onto the first surface of an ionization detector. The first surface opposes a second surface of the ionization detector. At least one second conductive trace is also formed on the first surface of the ionization detector in a substantially interlaced and symmetrical pattern with the at least one first conductive trace. Both of the traces are held at a voltage potential of a first polarity type. By forming the traces in a substantially interlaced and symmetric pattern, signals generated by a charge carrier are substantially of equal strength with respect to both of the traces. The only significant difference in measured signal strength occurs when the charge carrier moves to within close proximity of the traces and is received at the collecting trace. The measured signals are then subtracted and compared to quantitatively measure the magnitude of the charge and to determine the position at which the charge carrier originated within the ionization detector. 9 figs.

  16. Determination of charge carrier concentration in doped nonpolar liquids by impedance spectroscopy in the presence of charge adsorption.

    PubMed

    Yezer, Benjamin A; Khair, Aditya S; Sides, Paul J; Prieve, Dennis C

    2016-05-01

    The impedance of dodecane doped with sorbitan trioleate (Span 85), sorbitan monooleate (Span 80) and sorbitan monolaurate (Span 20) was measured as a function of frequency using a 10mV amplitude sinusoidal voltage applied across a parallel plate cell with a 10μm spacing. The tested solutions varied in concentration from 1mM to 100mM and the frequency range was 10(-2)-10(4)Hz. Nyquist plots of all three surfactants showed the high frequency semicircle characteristic of parallel resistance and capacitance but often exhibited a second semicircle at low frequencies which was attributed to charge adsorption and desorption. The electrical conductivity of each surfactant was proportional to surfactant concentration for concentrations above 10mM. Fitting the data to models for charge migration, differential capacitance, and adsorption allowed extraction of both charge concentration and two kinetic parameters that characterize the rate of adsorption and desorption. Above 10mM the ratio of charge carriers per surfactant molecule was 22ppm for Span 20, 3ppm for Span 80, and 0.2ppm for Span 85. A higher number of charge carriers per molecule of surfactant was associated with larger micelles. The adsorption rate constants were independent of surfactant concentration while the desorption rate constants were proportional to the surfactant concentration. This dependence indicated that uncharged surfactant, whether in micelles or not, participated in the desorption of charge. Predictions of the adsorption/desorption model for large constant electric fields agreed qualitatively with data from the literature (Karvar et al., 2014). PMID:26905337

  17. Charge Transport Characterization of Novel Electronic Materials.

    NASA Astrophysics Data System (ADS)

    Marcy, Henry Orlando, 5th.

    1990-01-01

    The work presented includes analysis of electronic transport data and related measurements for the following types of materials: molecular metals and conducting polymers based upon phthalocyanine (Pc) building blocks, new composites of conducting polymers with inorganic polymeric and layered materials, and both bulk and thin film samples of the high -T_{rm c} ceramic superconductors. To successfully study such a wide spectrum of materials, the charge transport instrumentation has evolved into multiple computer-controlled experimental arrangements which process data for temperature dependent ac and dc conductivity, thermoelectric power, critical current density, and other measurements, over the temperature range of 1.5 K to 400 K. The phthalocyanine-based molecular metals and conducting polymers exhibit some of the highest reported conductivities for environmentally stable organic conductors, and possess a unique structure which is inherently resistant to large structural transformations upon donor/acceptor doping. These properties are demonstrated primarily by results for Ni(Pc)(ClO_4) _{rm y} and { (Si(Pc)O) X_{rm y}}_{rm n}. The rigidly-enforced structure of the latter system of materials allows for controllable tuning of the band-filling and hence, the charge transport properties of an organic conductor, from insulating to metal-like behavior, without any major structural alterations of the polymeric backbone. Other types of polymeric samples for which results are presented consist of composite fibers formed from the rigid rod polymers, Kevlar and PBT, "alloyed" with the (Pc)-based conducting polymers, and new microlaminates formed by intercalating various conducting polymers into the van der Waals gap of inorganic, layered host materials. Significant success has been achieved in the fabrication of superconducting films of Y-Ba-Cu-O, Bi-Sr(Pb)-Ca-Cu -O, and Tl-Ba-Ca-Cu-O by organometallic chemical vapor deposition. Results are also presented for films prepared by excimer laser ablation. Correlation of the processing parameters with the observed normal state and superconducting properties of films produced by both methods, has pointed the way to improvements in the deposition methodology and led to the reproducible fabrication of high quality films.

  18. Efficient charge-carrier extraction from Ag2S quantum dots prepared by the SILAR method for utilization of multiple exciton generation

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoliang; Liu, Jianhua; Johansson, Erik M. J.

    2015-01-01

    The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the results suggest that the threshold energy (hνth) for MEG is 2.41Eg. The results reveal that Ag2S QD is a promising material for efficient extraction of charges from MEG and that QDs prepared by SILAR have an advantageous electrical contact facilitating charge separation and extraction.The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the results suggest that the threshold energy (hνth) for MEG is 2.41Eg. The results reveal that Ag2S QD is a promising material for efficient extraction of charges from MEG and that QDs prepared by SILAR have an advantageous electrical contact facilitating charge separation and extraction. Electronic supplementary information (ESI) available: Experimental details, XRD analysis, EDX analysis, PIA spectra, J-V curves, differential resistance and static resistance, photon energy dependent carrier extraction measurement. See DOI: 10.1039/c4nr04463k

  19. Preface: Charge transport in nanoscale junctions

    NASA Astrophysics Data System (ADS)

    Albrecht, Tim; Kornyshev, Alexei; Bjørnholm, Thomas

    2008-09-01

    Understanding the fundamentals of nanoscale charge transfer is pivotal for designing future nano-electronic devices. Such devices could be based on individual or groups of molecular bridges, nanotubes, nanoparticles, biomolecules and other 'active' components, mimicking wire, diode and transistor functions. These have operated in various environments including vacuum, air and condensed matter, in two- or three-electrode configurations, at ultra-low and room temperatures. Interest in charge transport in ultra-small device components has a long history and can be dated back to Aviram and Ratner's letter in 1974 (Chem. Phys. Lett. 29 277-83). So why is there a necessity for a special issue on this subject? The area has reached some degree of maturity, and even subtle geometric effects in the nanojunction and noise features can now be resolved and rationalized based on existing theoretical concepts. One purpose of this special issue is thus to showcase various aspects of nanoscale and single-molecule charge transport from experimental and theoretical perspectives. The main principles have 'crystallized' in our minds, but there is still a long way to go before true single-molecule electronics can be implemented. Major obstacles include the stability of electronic nanojunctions, reliable operation at room temperature, speed of operation and, last but not least, integration into large networks. A gradual transition from traditional silicon-based electronics to devices involving a single (or a few) molecule(s) therefore appears to be more viable from technologic and economic perspectives than a 'quantum leap'. As research in this area progresses, new applications emerge, e.g. with a view to characterizing interfacial charge transfer at the single-molecule level in general. For example, electrochemical experiments with individual enzyme molecules demonstrate that catalytic processes can be studied with nanometre resolution, offering a route towards optimizing biosensors at the molecular level. Nanoscale charge transport experiments in ionic liquids extend the field to high temperatures and to systems with intriguing interfacial potential distributions. Other directions may include dye-sensitized solar cells, new sensor applications and diagnostic tools for the study of surface-bound single molecules. Another motivation for this special issue is thus to highlight activities across different research communities with nanoscale charge transport as a common denominator. This special issue gathers 27 articles by scientists from the United States, Germany, the UK, Denmark, Russia, France, Israel, Canada, Australia, Sweden, Switzerland, the Netherlands, Belgium and Singapore; it gives us a flavour of the current state-of-the-art of this diverse research area. While based on contributions from many renowned groups and institutions, it obviously cannot claim to represent all groups active in this very broad area. Moreover, a number of world-leading groups were unable to take part in this project within the allocated time limit. Nevertheless, we regard the current selection of papers to be representative enough for the reader to draw their own conclusions about the current status of the field. Each paper is original and has its own merit, as all papers in Journal of Physics: Condensed Matter special issues are subjected to the same scrutiny as regular contributions. The Guest Editors have deliberately not defined the specific subjects covered in this issue. These came out logically from the development of this area, for example: 'Traditional' solid state nanojunctions based on adsorbed layers, oxide films or nanowires sandwiched between two electrodes: effects of molecular structure (aromaticity, anchoring groups), symmetry, orientation, dynamics (noise patterns) and current-induced heating. Various 'physical effects': inelastic tunnelling and Coulomb blockade, polaron effects, switching modes, and negative differential resistance; the role of many particle excitations, new surface states in semiconductor electrodes, various mechanisms for single molecule rectification of the current, inelastic electron spectra and SERS spectroscopy. Three terminal architectures allowing (electrochemical) gating and transistor effects. Electrochemical nanojunctions and gating: intermolecular electron transfer in multi-redox metalloproteins, contact force modulation, characteristic current-noise patterns due to conformational fluctuations, resonance effects and electrocatalysis. Novel architectures: linear coupled quantum-dot-bridged junctions, electrochemical redox mediated transfer in two center systems leading to double maxima current-voltage plots and negative differential resistance, molecular-nanoparticle hybrid junctions and unexpected mesoscopic effects in polymeric wires. Device integration: techniques for creating stable metal/molecule/metal junctions using 'nano-alligator clips' and integration with 'traditional' silicon-based technology. The Guest Editors would like to thank all of the authors and referees of this special issue for their meticulous work in making each paper a valuable contribution to this research area, the early-bird authors for their patience, and Journal of Physics: Condensed Matter editorial staff in Bristol for their continuous support.

  20. Model ab initio study of excess charge carrier solvation on conjugated carbon chains

    NASA Astrophysics Data System (ADS)

    Mayo, Michael Lynn

    When an excess charge carrier (electron or hole) is added to a semiconducting polymer chain, it is well known that the carrier may self-trap into a polaronic state accompanied by a bond length adjustment pattern. A different mechanism of self-localization is the solvation of charge carriers expected to take place when the polymer chain is immersed in polar media such as common solvents. We use density-functional computations in conjunction with the Polarizable Continuum Model to unequivocally demonstrate solvation-induced self-consistent charge localization into large-radius one-dimensional (1D) polarons on long CNH2 carbon chains with the polyynic structure. Within the computational framework used, the solvation results in a much more pronounced charge localization. When the lattice is allowed to relax, even larger degrees of charge localization are expected to occur. Our systematic study at various levels of ab initio theory investigates this conjecture. In all cases, solvation indeed increases charge localization however, within the framework of Hartree-Fock method we observe charge localization in the vacuum environment in the absence of lattice relaxation. In some of the cases, counterintuitively, lattice relaxation leads to slightly smaller degrees of localization in both HF and BHandHLYP methods. The ground state of odd-N polyynic oligomers C NH2 features kink-solitons in carbon-carbon bond-length alternation (BLA) patterns. We perform a systematic first-principles computational study of neutral and singly-charged kinks in long oligomers addressing relationships between BLA patterns, electron energy gaps, and accompanying distributions of spin and charge densities, both in vacuum and in the screening solvent environment. A quantitative comparison is made of the results derived with four different ab initio methods: from pure DFT to pure Hartree-Fock (HF) and including two popular hybrid density functionals, B3LYP and BHandHLYP. A clear correlation is demonstrated between the derived spatial extent of kinks and the amount of HF exchange used in the functionals. For charged kinks, we find a substantial difference in the behavior of charge and spin densities. We believe this work to be of relevance for various 1D semiconductors in polar environments.

  1. Effects of charge carrier concentration in hybrid conjugated polymer/oxide photovoltaic devices

    NASA Astrophysics Data System (ADS)

    White, Matthew Schuette

    2009-12-01

    Organic photovoltaics (OPV) represent an attractive route towards inexpensive, lightweight, and abundant renewable energy. The principal criticisms of OPV are low power conversion efficiency and unstable materials resulting in short device lifetimes. Hybrid OPV (h-OPV) devices with ZnO functioning either as the electron acceptor in the heterojunction, or as an electron transport layer in a polymer/fullerene based heterojunction, present useful device structures for investigating the functional mechanisms within OPV devices and a possible pathway towards air-stable high efficiency devices. Such use allows the vast knowledge surrounding oxide nanostructure morphology, band position, and carrier concentration control to be used in designing bulk-heterojunction OPV devices. The work presented in this thesis explores the effects of carrier concentration modulation in the polymer and/or oxide layers of these devices. Exposure to air is known to induce chemical defects in polymer semiconductors, which act as dopants in OPV devices. This increase in doping density can be used to improve OPV devices, however the low work-function metallic electrodes are often highly air sensitive. Using a silver back electrode and a ZnO interlayer at the transparent front contact in a polymer-based bulk heterojunction device allows for fabrication and testing in air. Relatively efficient devices are fabricated in this manner, but the devices show a characteristic aging time that indicates that air is a requirement to function as a quality diode. Air exposure may be effecting any of the layers in the device, but evidence is presented that shows the increased doping density in the polymer is largely responsible for the change in device quality over this time period. When oxides are used as the electron acceptor material in the device heterojunction, the carrier concentration in both the oxide and the polymer determine the strength of the electric field at the junction. Oxygen related doping of the polymer is a requisite for functional devices, but intentional doping of the oxide provides an additional degree of control over interfacial electric fields. By using planar hybrid heterojunctions, the utility of this effect is shown by increasing the driving force for charge separation. Interfacial barrier layers are required on highly doped ZnO to prevent recombination and preserve high fill factors. The measurable carrier concentration in the depletion region of polymer and polymer-fullerene blend films is shown to be significantly larger under illumination than in the dark. This effect is not related to breaking of the conjugated bonds in the polymer, as is the device aging phenomenon, but stems from low mobility of photo-generated electrons. The depletion width and maximum electric field in devices are influenced by the presence of an increased effective doping density under illumination.

  2. Energy Models for One-Carrier Transport in Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Jerome, Joseph W.; Shu, Chi-Wang

    1991-01-01

    Moment models of carrier transport, derived from the Boltzmann equation, made possible the simulation of certain key effects through such realistic assumptions as energy dependent mobility functions. This type of global dependence permits the observation of velocity overshoot in the vicinity of device junctions, not discerned via classical drift-diffusion models, which are primarily local in nature. It was found that a critical role is played in the hydrodynamic model by the heat conduction term. When ignored, the overshoot is inappropriately damped. When the standard choice of the Wiedemann-Franz law is made for the conductivity, spurious overshoot is observed. Agreement with Monte-Carlo simulation in this regime required empirical modification of this law, or nonstandard choices. Simulations of the hydrodynamic model in one and two dimensions, as well as simulations of a newly developed energy model, the RT model, are presented. The RT model, intermediate between the hydrodynamic and drift-diffusion model, was developed to eliminate the parabolic energy band and Maxwellian distribution assumptions, and to reduce the spurious overshoot with physically consistent assumptions. The algorithms employed for both models are the essentially non-oscillatory shock capturing algorithms. Some mathematical results are presented and contrasted with the highly developed state of the drift-diffusion model.

  3. P type porous silicon resistivity and carrier transport

    NASA Astrophysics Data System (ADS)

    Ménard, S.; Fèvre, A.; Billoué, J.; Gautier, G.

    2015-09-01

    The resistivity of p type porous silicon (PS) is reported on a wide range of PS physical properties. Al/PS/Si/Al structures were used and a rigorous experimental protocol was followed. The PS porosity (P%) was found to be the major contributor to the PS resistivity (ρPS). ρPS increases exponentially with P%. Values of ρPS as high as 1 × 109 Ω cm at room temperature were obtained once P% exceeds 60%. ρPS was found to be thermally activated, in particular, when the temperature increases from 30 to 200 °C, a decrease of three decades is observed on ρPS. Based on these results, it was also possible to deduce the carrier transport mechanisms in PS. For P% lower than 45%, the conduction occurs through band tails and deep levels in the tissue surrounding the crystallites. When P% overpasses 45%, electrons at energy levels close to the Fermi level allow a hopping conduction from crystallite to crystallite to appear. This study confirms the potential of PS as an insulating material for applications such as power electronic devices.

  4. Free Charge Carriers in Lead Iodide Perovskites Revealed by Transient Absorption Spectroscopy

    NASA Astrophysics Data System (ADS)

    Trinh, Minh Tuan; Zhu, Xiaoyang

    2015-03-01

    Lead iodide perovskites have emerged as the most-promising materials for low-cost thin film photovoltaics and other optoelectronic materials. Much experimental effort has been devoted to understanding fundamental properties and device performances, however the nature of photo-excitation in these materials remains debated. Using transient absorption spectroscopy, we study the dynamics of electrons and holes in photo-excited lead iodide perovskites. We show that, upon excitation with photon energy above the bandgap, hot electrons and holes are created. The e-h pair possess a transient dipole moment, which induces a transient Stark effect seen in subsequent optical transitions by the probe pulse. At high excitation densities, we find that carrier decay is well described by a third-order kinetic process, as expected from Auger recombination of free carriers. We also provide direct evidence for charge carrier traps on the surfaces and excitonic traps below the optical gaps in these materials.

  5. Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous- and stimulated-emission conditions

    SciTech Connect

    Vorob'ev, L. E. Zerova, V. L.; Borshchev, K. S.; Sokolova, Z. N.; Tarasov, I. S.; Belenky, G.

    2008-06-15

    The charge-carrier concentration and the temperature of hot electrons and holes in quantum-well laser nanostructures in the regimes of spontaneous and stimulated emission are determined as functions of the current density j, with InGaAs/GaAs structures as an example. Under spontaneous-emission conditions, the carrier concentration in the active region of a laser structure grows as the current increases, while carrier heating is insignificant. The spontaneous-emission spectra calculated taking into account forbidden optical transitions agree well with the experimental ones. Under stimulated-emission conditions, the behavior is quite different. When the pump current density is comparatively low (several times above the threshold), the concentration of injected charge carriers levels off and does not grow as the current increases, while the carrier temperature rises considerably. When the current density exceeds the threshold value by orders of magnitude, stabilization of the charge-carrier concentration does not take place; the carrier concentration exhibits a severalfold increase and the carrier temperature rises to about 450 K at j = 80 kA/cm{sup 2}. The number of the charge carriers escaping from the quantum wells into the barriers, which determines the laser efficiency, also increases under these conditions because of the carrier heating. This undesirable effect can be weakened by increasing the depth of the quantum wells.

  6. The non-random walk of chiral magnetic charge carriers in artificial spin ice

    PubMed Central

    Zeissler, K.; Walton, S. K.; Ladak, S.; Read, D. E.; Tyliszczak, T.; Cohen, L. F.; Branford, W. R.

    2013-01-01

    The flow of magnetic charge carriers (dubbed magnetic monopoles) through frustrated spin ice lattices, governed simply by Coulombic forces, represents a new direction in electromagnetism. Artificial spin ice nanoarrays realise this effect at room temperature, where the magnetic charge is carried by domain walls. Control of domain wall path is one important element of utilizing this new medium. By imaging the transit of domain walls across different connected 2D honeycomb structures we contribute an important aspect which will enable that control to be realized. Although apparently equivalent paths are presented to a domain wall as it approaches a Y-shaped vertex from a bar parallel to the field, we observe a stark non-random path distribution, which we attribute to the chirality of the magnetic charges. These observations are supported by detailed statistical modelling and micromagnetic simulations. The identification of chiral control to magnetic charge path selectivity invites analogy with spintronics. PMID:23409243

  7. Effective mass of a charged carrier in a nonpolar liquid: Snowball effect in superfluid helium

    SciTech Connect

    Chikina, I.; Varlamov, A. A.

    2007-05-01

    The problem of a correct definition of the charged carrier effective mass in superfluid helium is revised. It is shown that the effective mass of such a quasiparticle can be introduced without Atkins's idea about the solidification of liquid He{sup 4} in the close vicinity of an ion (the so-called ''snowball'' model). Moreover, in addition to the generalization of Atkins's model, the charged carrier effective mass formation is considered within the framework of the two-fluid scenario. The physical reasons of the normal-fluid contribution divergency and the way of the corresponding regularization procedure are discussed. Agreement between the theory and the available experimental data is found in a wide range of temperatures.

  8. Molecular ion battery: a rechargeable system without using any elemental ions as a charge carrier

    PubMed Central

    Yao, Masaru; Sano, Hikaru; Ando, Hisanori; Kiyobayashi, Tetsu

    2015-01-01

    Is it possible to exceed the lithium redox potential in electrochemical systems? It seems impossible to exceed the lithium potential because the redox potential of the elemental lithium is the lowest among all the elements, which contributes to the high voltage characteristics of the widely used lithium ion battery. However, it should be possible when we use a molecule-based ion which is not reduced even at the lithium potential in principle. Here we propose a new model system using a molecular electrolyte salt with polymer-based active materials in order to verify whether a molecular ion species serves as a charge carrier. Although the potential of the negative-electrode is not yet lower than that of lithium at present, this study reveals that a molecular ion can work as a charge carrier in a battery and the system is certainly a molecular ion-based “rocking chair” type battery. PMID:26043147

  9. Molecular ion battery: a rechargeable system without using any elemental ions as a charge carrier

    NASA Astrophysics Data System (ADS)

    Yao, Masaru; Sano, Hikaru; Ando, Hisanori; Kiyobayashi, Tetsu

    2015-06-01

    Is it possible to exceed the lithium redox potential in electrochemical systems? It seems impossible to exceed the lithium potential because the redox potential of the elemental lithium is the lowest among all the elements, which contributes to the high voltage characteristics of the widely used lithium ion battery. However, it should be possible when we use a molecule-based ion which is not reduced even at the lithium potential in principle. Here we propose a new model system using a molecular electrolyte salt with polymer-based active materials in order to verify whether a molecular ion species serves as a charge carrier. Although the potential of the negative-electrode is not yet lower than that of lithium at present, this study reveals that a molecular ion can work as a charge carrier in a battery and the system is certainly a molecular ion-based “rocking chair” type battery.

  10. Thickness dependence of surface morphology and charge carrier mobility in organic field-effect transistors

    NASA Astrophysics Data System (ADS)

    Tian, Xue-Yan; Xu, Zheng; Zhao, Su-Ling; Zhang, Fu-Jun; Yuan, Guang-Cai; Li, Jing; Sun, Qin-Jun; Wang, Yun; Xu, Xu-Rong

    2010-01-01

    With the aim of understanding the relationships between organic small molecule field-effect transistors (FETs) and organic conjugated polymer FETs, we investigate the thickness dependence of surface morphology and charge carrier mobility in pentacene and regioregular poly (3-hexylthiophene) (RR-P3HT) field-effect transistors. On the basis of the results of surface morphologies and electrical properties, we presume that the charge carrier mobility is largely related to the morphology of the organic active layer. We observe that the change trends of the surface morphologies (average size and average roughness) of pentacene and RR-P3HT thin films are mutually opposite, as the thickness of the organic layer increases. Further, we demonstrate that the change trends of the field-effect mobilities of pentacene and RR-P3HT FETs are also opposite to each other, as the thickness of the organic layer increases within its limit.

  11. Activationless charge transport across 4.5 to 22 nm in molecular electronic junctions

    PubMed Central

    Yan, Haijun; Bergren, Adam Johan; McCreery, Richard; Della Rocca, Maria Luisa; Martin, Pascal; Lafarge, Philippe; Lacroix, Jean Christophe

    2013-01-01

    In this work, we bridge the gap between short-range tunneling in molecular junctions and activated hopping in bulk organic films, and greatly extend the distance range of charge transport in molecular electronic devices. Three distinct transport mechanisms were observed for 4.5–22-nm-thick oligo(thiophene) layers between carbon contacts, with tunneling operative when d < 8 nm, activated hopping when d > 16 nm for high temperatures and low bias, and a third mechanism consistent with field-induced ionization of highest occupied molecular orbitals or interface states to generate charge carriers when d = 8–22 nm. Transport in the 8–22-nm range is weakly temperature dependent, with a field-dependent activation barrier that becomes negligible at moderate bias. We thus report here a unique, activationless transport mechanism, operative over 8–22-nm distances without involving hopping, which severely limits carrier mobility and device lifetime in organic semiconductors. Charge transport in molecular electronic junctions can thus be effective for transport distances significantly greater than the 1–5 nm associated with quantum-mechanical tunneling. PMID:23509271

  12. Activationless charge transport across 4.5 to 22 nm in molecular electronic junctions.

    PubMed

    Yan, Haijun; Bergren, Adam Johan; McCreery, Richard; Della Rocca, Maria Luisa; Martin, Pascal; Lafarge, Philippe; Lacroix, Jean Christophe

    2013-04-01

    In this work, we bridge the gap between short-range tunneling in molecular junctions and activated hopping in bulk organic films, and greatly extend the distance range of charge transport in molecular electronic devices. Three distinct transport mechanisms were observed for 4.5-22-nm-thick oligo(thiophene) layers between carbon contacts, with tunneling operative when d < 8 nm, activated hopping when d > 16 nm for high temperatures and low bias, and a third mechanism consistent with field-induced ionization of highest occupied molecular orbitals or interface states to generate charge carriers when d = 8-22 nm. Transport in the 8-22-nm range is weakly temperature dependent, with a field-dependent activation barrier that becomes negligible at moderate bias. We thus report here a unique, activationless transport mechanism, operative over 8-22-nm distances without involving hopping, which severely limits carrier mobility and device lifetime in organic semiconductors. Charge transport in molecular electronic junctions can thus be effective for transport distances significantly greater than the 1-5 nm associated with quantum-mechanical tunneling. PMID:23509271

  13. Spin Relaxation in Materials Lacking Coherent Charge Transport

    NASA Astrophysics Data System (ADS)

    Harmon, Nicholas

    2015-03-01

    As semiconductor spintronics research extends to materials beyond intrinsic or lightly doped semiconductors (e. g. organic materials, amorphous semiconductors, and impurity bands), the need is readily apparent for new theories of spin relaxation that encompass highly disordered materials, where charge transport is incoherent. We describe a broadly applicable theory of spin relaxation in materials with incoherent charge transport. The theory is based on continuous-time-random-walk theory and can incorporate many different relaxation mechanisms. We focus primarily on spin relaxation caused by spin-orbit and hyperfine effects in conjunction with carrier hopping. Analytic and numerical results from the theory are compared in various regimes with Monte Carlo simulations. Three different systems were examined: a polymer (MEH-PPV), amorphous silicon, and heavily doped n-GaAs. In the organic and amorphous systems, we predict spin relaxation and spin diffusion dependences on temperature and disorder for three different mechanisms (hyperfine, hopping-induced spin-orbit, and intra-site spin relaxation). The resulting unique experimental signatures predicted by the theory for each mechanism in these disordered systems provide a prescription for determining the dominant spin relaxation mechanism. We find our theory to be in agreement with available measurements in these materials. We also predict that large disorder modifies certain mechanisms to be algebraic instead of exponential in time. Our results should assist in evaluating the suitability of various disordered materials for spintronic devices. All work done in collaboration with Michael E. Flatté. Timothy Peterson and Paul Crowell collaborated as well on the n-GaAs study. This work was supported by an ARO MURI and by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  14. Migration of excited charge carriers in arrays of phosphorus-doped silicon nanocrystals

    SciTech Connect

    Belyakov, V. A. Konakov, A. A.; Burdov, V. A.

    2010-11-15

    The rate of tunnel migration of excited charge carriers (electrons and holes) in the array of silicon nanocrystals doped with phosphorus is calculated. It is shown that, starting from certain phosphorus concentrations dependent on the relation between the dimensions of the emitting and accepting nanocrystals, the rate of tunneling of electrons sharply decreases (by several orders of magnitude) and becomes lower than the rate of interband radiative recombination

  15. Hybrid organic—inorganic perovskites: low-cost semiconductors with intriguing charge-transport properties

    NASA Astrophysics Data System (ADS)

    Brenner, Thomas M.; Egger, David A.; Kronik, Leeor; Hodes, Gary; Cahen, David

    2016-01-01

    Solution-processed hybrid organic-inorganic perovskites (HOIPs) exhibit long electronic carrier diffusion lengths, high optical absorption coefficients and impressive photovoltaic device performance. Recent results allow us to compare and contrast HOIP charge-transport characteristics to those of III-V semiconductors — benchmarks of photovoltaic (and light-emitting and laser diode) performance. In this Review, we summarize what is known and unknown about charge transport in HOIPs, with particular emphasis on their advantages as photovoltaic materials. Experimental and theoretical findings are integrated into one narrative, in which we highlight the fundamental questions that need to be addressed regarding the charge-transport properties of these materials and suggest future research directions.

  16. Charge transport and structural dynamics in carboxylic-acid-based deep eutectic mixtures.

    PubMed

    Griffin, Philip J; Cosby, Tyler; Holt, Adam P; Benson, Roberto S; Sangoro, Joshua R

    2014-08-01

    Charge transport and structural dynamics in the 1:2 mol ratio mixture of lidocaine and decanoic acid (LID-DA), a model deep eutectic mixture (DEM), have been characterized over a wide temperature range using broad-band dielectric spectroscopy and depolarized dynamic light scattering. Additionally, Fourier transform infrared spectroscopy measurements were performed to assess the degree of proton transfer between the neutral parent molecules. From our detailed analysis of the dielectric spectra, we have determined that this carboxylic-acid-based DEM is approximately 25% ionic at room temperature. Furthermore, we have found that the characteristic diffusion rate of mobile charge carriers is practically identical to the rate of structural relaxation at all measured temperatures, indicating that fast proton transport does not occur in LID-DA. Our results demonstrate that while LID-DA exhibits the thermal characteristics of a DEM, its charge transport properties resemble those of a protic ionic liquid. PMID:25025600

  17. Spectroscopic characterization of charge carrier anisotropic motion in twisted few-layer graphene

    NASA Astrophysics Data System (ADS)

    Kandyba, Viktor; Yablonskikh, Mikhail; Barinov, Alexei

    2015-11-01

    Graphene, a layer of carbon atoms in a honeycomb lattice, captures enormous interest as probably the most promising component of future electronics thanks to its mechanical robustness, flexibility, and unique charge carrier quasiparticles propagating like massless high energy Dirac fermions. If several graphene layers form a stack, the interaction between them is, on the one hand, weak, allowing realization of various registries between the layers and, on the other hand, strong enough for a wide range tuning of the electronic properties. Here we grow few layer graphene with various number of layers and twist configurations and address the electronic properties of individual atomic layers in single microscopic domains using angle-resolved photoelectron spectromicroscopy. The dependence of the interlayer coupling on the twist angle is analyzed and, in the domains with tri-layers and more, if different rotations are present, the electrons in weaker coupled adjacent layers are shown to have different properties manifested by coexisting van Hove singularities, moiré superlattices with corresponding superlattice Dirac points, and charge carrier group velocity renormalizations. Moreover, pronounced anisotropy in the charge carrier motion, opening a possibility to transform strongly coupled graphene bilayers into quasi one-dimensional conductors, is observed.

  18. Improved charge carrier separation in barium tantalate composites investigated by laser flash photolysis.

    PubMed

    Schneider, Jenny; Nikitin, Konstantin; Wark, Michael; Bahnemann, Detlef W; Marschall, Roland

    2016-04-20

    Charge carrier dynamics in phase pure Ba5Ta4O15 and in a Ba5Ta4O15-Ba3Ta5O15 composite have been studied by means of diffuse reflectance laser flash photolysis spectroscopy in the presence and absence of an electron donor, in order to reveal the reason for the improved photocatalytic performance of the latter. For the first time the transient absorption of trapped electrons with a maximum at around 650 nm and of trapped holes with a transient absorption maximum at around 310 nm is reported for tantalates. The decay kinetics of the photogenerated charge carriers could be fitted by second order reaction kinetics, and the direct recombination of the trapped electrons with the trapped holes was proven. In the absence of an electron donor, no difference in the decay behavior between the phase pure material and the composite material is found. In the presence of methanol, for the pure phase Ba5Ta4O15 the recombination of the charge carriers could not be prevented and the trapped electrons also recombine with the ˙CH2OH radical formed via the methanol oxidation by the trapped holes. However, in the composite, the electron can be stored in the system, the ˙CH2OH radical injects an electron into the conduction band of the second component of the composite, i.e., Ba3Ta5O15. Thus, the electrons are available for an extended period to induce reduction reactions. PMID:26732364

  19. Spectroscopic characterization of charge carrier anisotropic motion in twisted few-layer graphene

    PubMed Central

    Kandyba, Viktor; Yablonskikh, Mikhail; Barinov, Alexei

    2015-01-01

    Graphene, a layer of carbon atoms in a honeycomb lattice, captures enormous interest as probably the most promising component of future electronics thanks to its mechanical robustness, flexibility, and unique charge carrier quasiparticles propagating like massless high energy Dirac fermions. If several graphene layers form a stack, the interaction between them is, on the one hand, weak, allowing realization of various registries between the layers and, on the other hand, strong enough for a wide range tuning of the electronic properties. Here we grow few layer graphene with various number of layers and twist configurations and address the electronic properties of individual atomic layers in single microscopic domains using angle-resolved photoelectron spectromicroscopy. The dependence of the interlayer coupling on the twist angle is analyzed and, in the domains with tri-layers and more, if different rotations are present, the electrons in weaker coupled adjacent layers are shown to have different properties manifested by coexisting van Hove singularities, moiré superlattices with corresponding superlattice Dirac points, and charge carrier group velocity renormalizations. Moreover, pronounced anisotropy in the charge carrier motion, opening a possibility to transform strongly coupled graphene bilayers into quasi one-dimensional conductors, is observed. PMID:26548567

  20. Activation energies of charge transport in doubly-doped polymers: polarons and disorder

    NASA Astrophysics Data System (ADS)

    Pautmeier, L. Th.; Scott, J. C.; Schein, L. B.

    1992-09-01

    We have measured the thermal activation energies of charge carrier mobilities in polycarbonate doped with two similar hydrazone transport molecules. The results are consistent with polaron formation contributing a major fraction of the activation energy. The observations cannot be reconciled with the simple application of a model based on site energy disorder, although some type of disorder is necessary to account for the observed dispersive behavior and the anomalous broadening of the transients.

  1. DNA charge transport over 34 nm

    NASA Astrophysics Data System (ADS)

    Slinker, Jason D.; Muren, Natalie B.; Renfrew, Sara E.; Barton, Jacqueline K.

    2011-03-01

    Molecular wires show promise in nanoscale electronics, but the synthesis of uniform, long conductive molecules is a significant challenge. Deoxyribonucleic acid (DNA) of precise length, by contrast, is synthesized easily, but its conductivity over the distances required for nanoscale devices has not been explored. Here we demonstrate DNA charge transport (CT) over 34 nm in 100-mer monolayers on gold. Multiplexed gold electrodes modified with 100-mer DNA yield sizable electrochemical signals from a distal, covalent Nile Blue redox probe. Significant signal attenuation upon incorporation of a single base-pair mismatch demonstrates that CT is DNA-mediated. Efficient cleavage of these 100-mers by a restriction enzyme indicates that the DNA adopts a native conformation accessible to protein binding. Similar electron-transfer rates measured through 100-mer and 17-mer monolayers are consistent with rate-limiting electron tunnelling through the saturated carbon linker. This DNA-mediated CT distance of 34 nm surpasses that of most reports of molecular wires.

  2. Brownian dynamics determine universality of charge transport in ionic liquids

    SciTech Connect

    Sangoro, Joshua R; Iacob, Ciprian; Mierzwa, Michal; Paluch, Marian; Kremer, Friedrich

    2012-01-01

    Broadband dielectric spectroscopy is employed to investigate charge transport in a variety of glass-forming ionic liquids over wide frequency, temperature and pressure ranges. Using a combination of Einstein, Einstein-Smoluchowski, and Langevin relations, the observed universal scaling of charge transport in ionic liquids is traced back to the dominant role of Brownian dynamics.

  3. 31 CFR 337.2 - Transportation charges and risks.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 2 2012-07-01 2012-07-01 false Transportation charges and risks. 337... FEDERAL HOUSING ADMINISTRATION DEBENTURES Certificated Debentures § 337.2 Transportation charges and risks... to book-entry form, must be delivered at the expense and risk of the holder. Debentures...

  4. 31 CFR 337.2 - Transportation charges and risks.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 2 2011-07-01 2011-07-01 false Transportation charges and risks. 337... FEDERAL HOUSING ADMINISTRATION DEBENTURES Certificated Debentures § 337.2 Transportation charges and risks... to book-entry form, must be delivered at the expense and risk of the holder. Debentures...

  5. 31 CFR 337.2 - Transportation charges and risks.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 2 2013-07-01 2013-07-01 false Transportation charges and risks. 337... FEDERAL HOUSING ADMINISTRATION DEBENTURES Certificated Debentures § 337.2 Transportation charges and risks... to book-entry form, must be delivered at the expense and risk of the holder. Debentures...

  6. 31 CFR 337.2 - Transportation charges and risks.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 2 2010-07-01 2010-07-01 false Transportation charges and risks. 337... FEDERAL HOUSING ADMINISTRATION DEBENTURES Certificated Debentures § 337.2 Transportation charges and risks... to book-entry form, must be delivered at the expense and risk of the holder. Debentures...

  7. Fullerene-Free Polymer Solar Cells with Highly Reduced Bimolecular Recombination and Field-Independent Charge Carrier Generation.

    PubMed

    Roland, Steffen; Schubert, Marcel; Collins, Brian A; Kurpiers, Jona; Chen, Zhihua; Facchetti, Antonio; Ade, Harald; Neher, Dieter

    2014-08-21

    Photogeneration, recombination, and transport of free charge carriers in all-polymer bulk heterojunction solar cells incorporating poly(3-hexylthiophene) (P3HT) as donor and poly([N,N'-bis(2-octyldodecyl)-naphthelene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)) (P(NDI2OD-T2)) as acceptor polymer have been investigated by the use of time delayed collection field (TDCF) and time-of-flight (TOF) measurements. Depending on the preparation procedure used to dry the active layers, these solar cells comprise high fill factors (FFs) of up to 67%. A strongly reduced bimolecular recombination (BMR), as well as a field-independent free charge carrier generation are observed, features that are common to high performance fullerene-based solar cells. Resonant soft X-ray measurements (R-SoXS) and photoluminescence quenching experiments (PQE) reveal that the BMR is related to domain purity. Our results elucidate the similarities of this polymeric acceptor with the superior recombination properties of fullerene acceptors. PMID:26278084

  8. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.

    PubMed

    Li, Song-Lin; Tsukagoshi, Kazuhito; Orgiu, Emanuele; Samorì, Paolo

    2016-01-01

    Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (e.g. gaseous adsorbates from air and trapped charges in substrates) and their electronic performance is generally lower than corresponding bulk materials due to the fact that the surface and bulk coincide. In this article, we review recent progress on the charge transport properties and carrier mobility engineering of 2D transition metal chalcogenides, with a particular focus on the markedly high dependence of carrier mobility on thickness. We unveil the origin of this unique thickness dependence and elaborate the devised strategies to master it for carrier mobility optimization. Specifically, physical and chemical methods towards the optimization of the major factors influencing the extrinsic transport such as electrode/semiconductor contacts, interfacial Coulomb impurities and atomic defects are discussed. In particular, the use of ad hoc molecules makes it possible to engineer the interface with the dielectric and heal the vacancies in such materials. By casting fresh light on the theoretical and experimental studies, we provide a guide for improving the electronic performance of 2D semiconductors, with the ultimate goal of achieving technologically viable atomically thin (opto)electronics. PMID:26593874

  9. Bi(1)-(x)Sb(x) alloy nanocrystals: colloidal synthesis, charge transport, and thermoelectric properties.

    PubMed

    Zhang, Hao; Son, Jae Sung; Jang, Jaeyoung; Lee, Jong-Soo; Ong, Wee-Liat; Malen, Jonathan A; Talapin, Dmitri V

    2013-11-26

    Nanostructured Bi1-xSbx alloys constitute a convenient system to study charge transport in a nanostructured narrow-gap semiconductor with promising thermoelectric properties. In this work, we developed the colloidal synthesis of monodisperse sub-10 nm Bi1-xSbx alloy nanocrystals (NCs) with controllable size and compositions. The surface chemistry of Bi1-xSbx NCs was tailored with inorganic ligands to improve the interparticle charge transport as well as to control the carrier concentration. Temperature-dependent (10-300 K) electrical measurements were performed on the Bi1-xSbx NC based pellets to investigate the effect of surface chemistry and grain size (∼10-40 nm) on their charge transport properties. The Hall effect measurements revealed that the temperature dependence of carrier mobility and concentration strongly depended on the grain size and the surface chemistry, which was different from the reported bulk behavior. At low temperatures, electron mobility in nanostructured Bi1-xSbx was directly proportional to the average grain size, while the concentration of free carriers was inversely proportional to the grain size. We propose a model explaining such behavior. Preliminary measurements of thermoelectric properties showed a ZT value comparable to those of bulk Bi1-xSbx alloys at 300 K, suggesting a potential of Bi1-xSbx NCs for low-temperature thermoelectric applications. PMID:24134215

  10. Electrochemical characteristics of ideal polarizable interfaces with limited number of charge carriers

    NASA Astrophysics Data System (ADS)

    Přibyl, Michal; Slouka, Zdeněk

    2015-11-01

    Recent progress in material chemistry and surface engineering has led to emergence of new electrode materials with unique physical and electrochemical properties. Here, we introduce a physical model describing charging of ideal polarizable electrode-electrolyte interface where the electrode is characterized by a limited capacity to store charge. The analytical model treats the electrode and electrolyte phases as independent nonlinear capacitors that are eventually coupled through the condition of equality of the total stored electrical charge opposite in sign. Gouy-Chapman and condensed layer theories applied to a general 1 :n valent electrolyte are used to predict dependencies of differential capacitance of the electrolyte phase and surface concentration of the electrical charge on the applied potential. The model of the nonlinear capacitor for the electrode phase is described by a theory of electron donors and acceptors present in conductive solids as a result of thermal fluctuations. Both the differential capacitance and the surface concentration of the electrical charge in the electrode are evaluated as functions of the applied potential and related to the capacity of the electrode phase to accumulate charge and its ability to form electron donors and acceptors. The knowledge of capacitive properties of both phases allows to predict electrochemical characteristics of ideal polarizable interfaces, e.g., current responses in linear sweep voltammetry. The coupled model also shows significant potential drops in the electrode comparable to those in the electrolyte phase for materials with low charge carrier concentrations.

  11. Charge Energy Transport in Hopping Systems with Rapidly Decreasing Density of States

    NASA Astrophysics Data System (ADS)

    Mendels, Dan; Organic Electronics Group Technion Team

    2014-03-01

    An accurate description of the carrier hopping topology in the energy domain of hopping systems incorporating a rapidly decreasing density of states and the subsequent energetic position of these systems' so called effective conduction band is crucial for rationalizing and quantifying these systems' thermo-electric properties, doping related phenomena and carrier gradient effects such as the emergence of the General Einstein Relation under degenerate conditions. Additionally, as will be shown, the 'mobile' carriers propagating through the system can have excess energies reaching 0.3eV above the system quasi-Fermi energy. Hence, since these mobile carriers are most prone to reach systems interfaces and interact with oppositely charged carriers, their excess energy should be considered in determining the efficiencies of energy dependent processes such as carrier recombination and exciton dissociation. In light of the stated motivations, a comprehensive numerical and analytical study of the topology of hopping in the energetic density of such systems (i.e. the statistics regarding which energy values carriers visit most and in what manner) was implemented and the main statistical features of the hopping process that determine the position in energy of the system's effective conduction band were distilled. The obtained results also help shed light on yet to be elucidated discrepancies between predictions given by the widely employed transport energy concept and Monte Carlo simulations.

  12. In-situ imaging of charge carriers in an electrochemical cell.

    SciTech Connect

    Gerald, R. E. II

    1998-01-30

    A toroid cavity nuclear magnetic resonance (NMR) detector capable of quantitatively recording radial concentration profiles, diffusion constants, displacements of charge carriers, and radial profiles of spin-lattice relaxation time constants was employed to investigate the charge/discharge cycle of a solid-state electrochemical cell. One-dimensional radial concentration profiles (1D-images) of ions solvated in a polyethylene oxide matrix were recorded by {sup 19}F and {sup 7}Li NMR for several cells. A sequence of {sup 19}F NMR images, recorded at different stages of cell polarization, revealed the evolution of a region of the polymer depleted of charge carriers. From these images it is possible to extract the transference number for the Li{sup +} ion. Spatially localized diffusion coefficients and spin-lattice relaxation time constants can be measured simultaneously for the ions in the polymer electrolyte by a spin-labeling method that employs the radial B{sub 1}-field gradient of the toroid cavity. A spatial resolution of 7 {micro}m near the working electrode was achieved with a gradient strength of 800 gauss/cm. With this apparatus, it is also possible to investigate novel intercalation anode materials for lithium ion storage. These materials are coated onto the working electrode in a thin film. The penetration depth of lithium cations in these films can be imaged at different times in the charge/discharge cycle of the battery.

  13. Overall current-voltage characteristics of space charge controlled currents for thin films by a single carrier species

    NASA Astrophysics Data System (ADS)

    Seki, Kazuhiko

    2014-08-01

    The Mott-Gurney equation (Child's law) has been frequently applied to measure the mobility of carrier transport layers. One of the main assumption in the Mott-Gurney theory is ignoring the diffusive currents. It was not obvious, however, whether the diffusive currents can be ignored for thin carrier transport layers. We obtained the current-voltage relation using analytical solutions of drift-diffusion equation coupled with the Poisson's equation. The integration constants were numerically determined using nonlinear equations obtained from boundary conditions. A simple analytical relation between the voltage and current was also derived. The analytical equation improved over the Mott-Gurney equation when the voltage is between 0.1 and 2 (V) at room temperature. By using published data, we show that both the mobility and the layer thickness can be simultaneously obtained by applying the analytical expression. The effect of diffusion on the current-voltage relation is explained by the movement of the virtual electrode formed by space charge accumulation.

  14. Revealing the ultrafast charge carrier dynamics in organo metal halide perovskite solar cell materials using time resolved THz spectroscopy

    NASA Astrophysics Data System (ADS)

    Ponseca, C. S., Jr.; Sundström, V.

    2016-03-01

    Ultrafast charge carrier dynamics in organo metal halide perovskite has been probed using time resolved terahertz (THz) spectroscopy (TRTS). Current literature on its early time characteristics is unanimous: sub-ps charge carrier generation, highly mobile charges and very slow recombination rationalizing the exceptionally high power conversion efficiency for a solution processed solar cell material. Electron injection from MAPbI3 to nanoparticles (NP) of TiO2 is found to be sub-ps while Al2O3 NPs do not alter charge dynamics. Charge transfer to organic electrodes, Spiro-OMeTAD and PCBM, is sub-ps and few hundreds of ps respectively, which is influenced by the alignment of energy bands. It is surmised that minimizing defects/trap states is key in optimizing charge carrier extraction from these materials.

  15. Revealing the ultrafast charge carrier dynamics in organo metal halide perovskite solar cell materials using time resolved THz spectroscopy.

    PubMed

    Ponseca, C S; Sundström, V

    2016-03-17

    Ultrafast charge carrier dynamics in organo metal halide perovskite has been probed using time resolved terahertz (THz) spectroscopy (TRTS). Current literature on its early time characteristics is unanimous: sub-ps charge carrier generation, highly mobile charges and very slow recombination rationalizing the exceptionally high power conversion efficiency for a solution processed solar cell material. Electron injection from MAPbI3 to nanoparticles (NP) of TiO2 is found to be sub-ps while Al2O3 NPs do not alter charge dynamics. Charge transfer to organic electrodes, Spiro-OMeTAD and PCBM, is sub-ps and few hundreds of ps respectively, which is influenced by the alignment of energy bands. It is surmised that minimizing defects/trap states is key in optimizing charge carrier extraction from these materials. PMID:26763720

  16. Excited state and charge-carrier dynamics in perovskite solar cell materials

    NASA Astrophysics Data System (ADS)

    Ponseca, Carlito S., Jr.; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G.

    2016-02-01

    Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research.

  17. Excited state and charge-carrier dynamics in perovskite solar cell materials.

    PubMed

    Ponseca, Carlito S; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G

    2016-02-26

    Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research. PMID:26820442

  18. Initial spatial distribution of geminate charge carriers photogenerated in doped conjugated polymers

    NASA Astrophysics Data System (ADS)

    Lukin, L. V.

    2015-12-01

    A diffusion model of the charge carrier photogeneration in doped conjugated polymers is suggested. A dissociation of a vibrationally relaxed exciton into a Coulombically bound geminate pair of charges occurs at a charge transfer center which consists of a conjugated segment of a polymer chain and a nearby dopant molecule. A photogenerated hole executes one-dimensional diffusion motion along the conjugated segment in the on-chain potential well formed by the Coulomb and external electric fields. Holes are assumed to become localized in trapping sites. It is shown that the spatial distribution of trapped holes is determined mainly by effective temperature of pretrapped holes and external electric field. The model is consistent with experimental data on photoconduction of a copolymer of a phenyl-substituted poly-phenylenevinylene doped with trinitrofluorenone, which have been reported by Weiter et al. (2004). Effective temperature of holes is evaluated at about 1200 K.

  19. Comparison between charge and spin transport in few-layer graphene

    NASA Astrophysics Data System (ADS)

    Maassen, T.; Dejene, F. K.; Guimarães, M. H. D.; Józsa, C.; van Wees, B. J.

    2011-03-01

    Transport measurements on few-layer graphene (FLG) are important because they interpolate between the properties of single-layer graphene (SLG) as a true two-dimensional material and the three-dimensional bulk properties of graphite. In this article we present four-probe local charge transport and nonlocal spin-valve and spin-precession measurements on lateral spin field-effect transistors on FLG. We study systematically the charge- and spin-transport properties depending on the number of layers and the electrical back gating of the device. We explain the charge-transport measurements by taking the screening of scattering potentials into account and use the results to understand the spin data. The measured samples are between 3 and 20 layers thick, and we include in our analysis our earlier results of the measurements on SLG for comparison. In our room-temperature spin-transport measurements we manage to observe spin signals over distances up to 10 μm and measure enhanced spin-relaxation times with an increasing number of layers, reaching τs~500 ps as a maximum, about 4 times higher than in SLG. The increase of τs can result from the screening of scattering potentials due to additional intrinsic charge carriers in FLG. We calculate the density of states of FLG using a zone-folding scheme to determine the charge-diffusion coefficient DC from the square resistance RS. The resulting DC and the spin-diffusion coefficient DS show similar values and depend only weakly on the number of layers and gate-induced charge carriers. We discuss the implications of this on the identification of the spin-relaxation mechanism.

  20. Theoretical study of isomerism/phase dependent charge transport properties in tris(8-hydroxyquinolinato)aluminum(III).

    PubMed

    Gao, Hongze; Zhang, Hongyu; Zhang, Houyu; Gen, Yun; Su, Zhong-Min

    2011-08-25

    The charge carrier transporting ability in the polymorphism of tris(8-hydroxyquinolinato)aluminum(III) (Alq(3)) has been studied using density functional theory (DFT) and Marcus charge transport theory. α- and β-Alq(3) composed of mer-Alq(3) molecules have stronger electron-transporting property (n-type materials) compared with their hole-transporting ability. In contrast, γ- and δ-Alq(3) formed by fac-Alq(3) molecules possess stronger hole-transporting character than their electron-transporting ability. The detailed theoretical calculations indicate the reason lies in the differences of HOMO and LUMO distribution states of the two kinds of isomers, and the different molecular packing modes of charge-transporting pathways for different phases. PMID:21809889

  1. DNA Charge Transport within the Cell

    PubMed Central

    Grodick, Michael A.; Muren, Natalie B.; Barton, Jacqueline K.

    2015-01-01

    The unique characteristics of DNA charge transport (CT) have prompted an examination of roles for this chemistry within a biological context. Not only can DNA CT facilitate long range oxidative damage of DNA, but redox-active proteins can couple to the DNA base stack and participate in long range redox reactions using DNA CT. DNA transcription factors with redox-active moieties such as SoxR and p53 can use DNA CT as a form of redox sensing. DNA CT chemistry also provides a means to monitor the integrity of the DNA, given the sensitivity of DNA CT to perturbations in base stacking as arise with mismatches and lesions. Enzymes that utilize this chemistry include an interesting and ever-growing class of DNA-processing enzymes involved in DNA repair, replication, and transcription that have been found to contain 4Fe-4S clusters. DNA repair enzymes containing 4Fe-4S clusters, that include Endonuclease III (EndoIII), MutY, and DinG from bacteria, as well as XPD from archaea, have been shown to be redox-active when bound to DNA, share a DNA-bound redox potential, and can be reduced and oxidized at long range via DNA CT. Interactions between DNA and these proteins in solution, in addition to genetics experiments within E. coli, suggest that DNA-mediated CT can be used as a means of cooperative signaling among DNA repair proteins that contain 4Fe-4S clusters as a first step in finding DNA damage, even within cells. Based on these data, we can consider also how DNA-mediated CT may be used as a means of signaling to coordinate DNA processing across the genome. PMID:25606780

  2. Impact of charge transport on current–voltage characteristics and power-conversion efficiency of organic solar cells

    PubMed Central

    Würfel, Uli; Neher, Dieter; Spies, Annika; Albrecht, Steve

    2015-01-01

    This work elucidates the impact of charge transport on the photovoltaic properties of organic solar cells. Here we show that the analysis of current–voltage curves of organic solar cells under illumination with the Shockley equation results in values for ideality factor, photocurrent and parallel resistance, which lack physical meaning. Drift-diffusion simulations for a wide range of charge-carrier mobilities and illumination intensities reveal significant carrier accumulation caused by poor transport properties, which is not included in the Shockley equation. As a consequence, the separation of the quasi Fermi levels in the organic photoactive layer (internal voltage) differs substantially from the external voltage for almost all conditions. We present a new analytical model, which considers carrier transport explicitly. The model shows excellent agreement with full drift-diffusion simulations over a wide range of mobilities and illumination intensities, making it suitable for realistic efficiency predictions for organic solar cells. PMID:25907581

  3. Impact of charge transport on current-voltage characteristics and power-conversion efficiency of organic solar cells

    NASA Astrophysics Data System (ADS)

    Wrfel, Uli; Neher, Dieter; Spies, Annika; Albrecht, Steve

    2015-04-01

    This work elucidates the impact of charge transport on the photovoltaic properties of organic solar cells. Here we show that the analysis of current-voltage curves of organic solar cells under illumination with the Shockley equation results in values for ideality factor, photocurrent and parallel resistance, which lack physical meaning. Drift-diffusion simulations for a wide range of charge-carrier mobilities and illumination intensities reveal significant carrier accumulation caused by poor transport properties, which is not included in the Shockley equation. As a consequence, the separation of the quasi Fermi levels in the organic photoactive layer (internal voltage) differs substantially from the external voltage for almost all conditions. We present a new analytical model, which considers carrier transport explicitly. The model shows excellent agreement with full drift-diffusion simulations over a wide range of mobilities and illumination intensities, making it suitable for realistic efficiency predictions for organic solar cells.

  4. Charge Transport in Conjugated Materials: From Theoretical Models to Experimental Systems

    SciTech Connect

    Olivier, Yoann; Cornil, Jerome; Muccioli, Luca; Zannoni, Claudio

    2008-09-17

    Charge carrier mobility is the key quantity to characterize the charge transport properties in devices. Based on earlier work of Baessler and co-workers, we set up a Monte-Carlo approach that allows us to calculate mobility using transfer rates derived from Marcus theory. The parameters entering into the rate expression are evaluated by means of different quantum-chemical techniques. Our approach is applied here to a model one-dimensional system made of pentacene molecules as well as to real systems such as crystalline structures and columnar liquid crystal phases.

  5. A novel method of identifying the carrier transport path in metal oxide resistive random access memory

    NASA Astrophysics Data System (ADS)

    Lu, Nianduan; Li, Ling; Sun, Pengxiao; Wang, Ming; Liu, Qi; Lv, Hangbing; Long, Shibing; Liu, Ming

    2015-02-01

    Characterization of defect energy levels is of crucial importance to understand the carrier transport and conduction mechanism of a conducting filament. Currently, it is difficult to probe the defect energy level of a conducting filament in random access memory (RRAM) by experiment. Based on the activation energy of carrier transport from the first-principles calculations, we present a physical model correlating macroscopic I-V characteristics with material microstructure to analyze the defect energy level of a conducting filament in metal oxide RRAM. The carrier transport path in the conducting filament can be specially extracted using the defect energy level.

  6. Theoretical studies of carrier transport in HgI2

    NASA Astrophysics Data System (ADS)

    Chang, Yia-Chung; James, R. B.

    1996-06-01

    Theoretical studies of the electron-phonon coupling and carrier mobility for red mercuric iodide are presented. The electronic states are calculated by an empirical pseudopotential method, while the lattice vibrations are described via a rigid-ion model. Effects due to the deformation potential and polar-optical scattering are discussed. Carrier mobilities along both c and a axes as functions of temperature are calculated and they are in good agreement with the experimental data.

  7. Glass transition dynamics and charge carrier mobility in conjugated polyfluorene thin films

    NASA Astrophysics Data System (ADS)

    Qin, Hui; Liu, Dan; Wang, Tao

    Conjugated polymers are commonly used in organic optoelectronic devices, e.g. organic photovoltaics (OPVs), light-emitting diodes (LEDs) and field effect transistors (FETs). In these devices, the conjugated polymers are prepared as thin films with thicknesses in the range of tens to hundreds of nanometers, and are interfaced with different function layers made from organic or inorganic materials. We have studied the glass transition temperature (Tg) of poly(9, 9-dioctylfluorene)-co-N-(1, 4-butylphenyl)diphenylamine) (TFB) thin films supported on different substrates, as well as their SCLC charge carrier mobility in photodiodes. Both Monotonic and non-monotonic Tg deviations are observed in TFB thin films supported on Si/SiOx and PEDOT:PSS, respectively. With low to moderate thermal crosslinking, the thickness dependent Tg deviation still exists, which diminishes in TFB films with a high crosslinking degree. The vertical charge carrier mobility of TFB thin films extracted from the SCLC measurements is found increase with film thickness, a value increases from 1 to 50 x 10-6 cm2 V-1 s-1 in the thickness range from 15 to 180 nm. Crosslinking was found to reduce the carrier mobility in TFB thin films. The Tg deviations are also discussed using the classic layered models in the literature. Our results provide a precise guide for the fabrication and design of high performance optoelectronic devices.

  8. 41 CFR 301-72.100 - What must my travel accounting system do in relation to common carrier transportation?

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... accounting system do in relation to common carrier transportation? 301-72.100 Section 301-72.100 Public... AGENCY RESPONSIBILITIES 72-AGENCY RESPONSIBILITIES RELATED TO COMMON CARRIER TRANSPORTATION Accounting for Common Carrier Transportation § 301-72.100 What must my travel accounting system do in relation...

  9. 41 CFR 301-72.100 - What must my travel accounting system do in relation to common carrier transportation?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... accounting system do in relation to common carrier transportation? 301-72.100 Section 301-72.100 Public... AGENCY RESPONSIBILITIES 72-AGENCY RESPONSIBILITIES RELATED TO COMMON CARRIER TRANSPORTATION Accounting for Common Carrier Transportation § 301-72.100 What must my travel accounting system do in relation...

  10. 41 CFR 301-72.100 - What must my travel accounting system do in relation to common carrier transportation?

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... accounting system do in relation to common carrier transportation? 301-72.100 Section 301-72.100 Public... AGENCY RESPONSIBILITIES 72-AGENCY RESPONSIBILITIES RELATED TO COMMON CARRIER TRANSPORTATION Accounting for Common Carrier Transportation § 301-72.100 What must my travel accounting system do in relation...

  11. 41 CFR 301-72.100 - What must my travel accounting system do in relation to common carrier transportation?

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... accounting system do in relation to common carrier transportation? 301-72.100 Section 301-72.100 Public... AGENCY RESPONSIBILITIES 72-AGENCY RESPONSIBILITIES RELATED TO COMMON CARRIER TRANSPORTATION Accounting for Common Carrier Transportation § 301-72.100 What must my travel accounting system do in relation...

  12. Charge transport in tri-p-tolylamine doped trinaphthalylbenzene glass

    NASA Astrophysics Data System (ADS)

    Lin, Liang-Bih; O'Reilly, James M.; Magin, Edward H.; Weiss, David S.; Jenekhe, Samson A.

    2000-09-01

    The charge transport properties of tri-p-tolylamine (TTA) doped trinaphthalylbenzene have been measured as a function of electric field and temperature. The charge mobilities of the composite are comparable to but somewhat lower than that of TTA doped polystyrene, a nonpolar polymeric host, at similar weight fractions. We suggest that the difference is due to inhomogeneity between the host and the dopant. The results suggest that, similar to polymer hosts in molecularly doped polymers, the molecular host only functions as an inert diluter and does not directly participate in the charge transport manifold. The results also substantiate the importance of molecular packing to charge hopping in disordered organic materials. The charge mobility data are analyzed with a disorder model due to Bässler and coworkers and a recently modified expression due to Novikov and coworkers [Phys. Rev. Lett. 81, 4472 (1998)]. Both models provide adequate descriptions of charge transport in organic amorphous materials.

  13. Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics.

    PubMed

    Ten Cate, Sybren; Sandeep, C S Suchand; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J; Schins, Juleon M; Siebbeles, Laurens D A

    2015-02-17

    CONSPECTUS: In a conventional photovoltaic device (solar cell or photodiode) photons are absorbed in a bulk semiconductor layer, leading to excitation of an electron from a valence band to a conduction band. Directly after photoexcitation, the hole in the valence band and the electron in the conduction band have excess energy given by the difference between the photon energy and the semiconductor band gap. In a bulk semiconductor, the initially hot charges rapidly lose their excess energy as heat. This heat loss is the main reason that the theoretical efficiency of a conventional solar cell is limited to the Shockley-Queisser limit of ∼33%. The efficiency of a photovoltaic device can be increased if the excess energy is utilized to excite additional electrons across the band gap. A sufficiently hot charge can produce an electron-hole pair by Coulomb scattering on a valence electron. This process of carrier multiplication (CM) leads to formation of two or more electron-hole pairs for the absorption of one photon. In bulk semiconductors such as silicon, the energetic threshold for CM is too high to be of practical use. However, CM in nanometer sized semiconductor quantum dots (QDs) offers prospects for exploitation in photovoltaics. CM leads to formation of two or more electron-hole pairs that are initially in close proximity. For photovoltaic applications, these charges must escape from recombination. This Account outlines our recent progress in the generation of free mobile charges that result from CM in QDs. Studies of charge carrier photogeneration and mobility were carried out using (ultrafast) time-resolved laser techniques with optical or ac conductivity detection. We found that charges can be extracted from photoexcited PbS QDs by bringing them into contact with organic electron and hole accepting materials. However, charge localization on the QD produces a strong Coulomb attraction to its counter charge in the organic material. This limits the production of free charges that can contribute to the photocurrent in a device. We show that free mobile charges can be efficiently produced via CM in solids of strongly coupled PbSe QDs. Strong electronic coupling between the QDs resulted in a charge carrier mobility of the order of 1 cm(2) V(-1) s(-1). This mobility is sufficiently high so that virtually all electron-hole pairs escape from recombination. The impact of temperature on the CM efficiency in PbSe QD solids was also studied. We inferred that temperature has no observable effect on the rate of cooling of hot charges nor on the CM rate. We conclude that exploitation of CM requires that charges have sufficiently high mobility to escape from recombination. The contribution of CM to the efficiency of photovoltaic devices can be further enhanced by an increase of the CM efficiency above the energetic threshold of twice the band gap. For large-scale applications in photovoltaic devices, it is important to develop abundant and nontoxic materials that exhibit efficient CM. PMID:25607377

  14. Scaling theory for percolative charge transport in molecular semiconductors: Correlated versus uncorrelated energetic disorder

    NASA Astrophysics Data System (ADS)

    Cottaar, J.; Coehoorn, R.; Bobbert, P. A.

    2012-06-01

    We recently introduced a scaling theory for charge transport in molecular semiconductors with uncorrelated Gaussian energetic disorder, considering Miller-Abrahams as well as Marcus hopping and different lattice structures [Cottaar , Phys. Rev. Lett.PRLTAO0031-900710.1103/PhysRevLett.107.136601 107, 136601 (2011)]. A compact expression was derived for the dependence of the charge-carrier mobility on temperature and carrier concentration. We show here that for Miller-Abrahams hopping the theory can also be applied to non-Gaussian energetic disorder, without parameter changes. Moreover, we show how it can be applied to correlated energetic disorder as obtained from randomly oriented molecular dipoles, which experiments suggest to be often more suitable. The same compact expression still describes the charge-carrier mobility, with new parameter values as determined from numerically exact results. The critical scaling exponent for correlated disorder is about twice as large as for uncorrelated disorder, which is caused by a different topology of the percolating network. The temperature dependence of the mobility for correlated disorder is significantly weaker than for uncorrelated disorder, while the carrier-concentration dependence is slightly weaker, due to small deviations of the density of states from a Gaussian. We indicate how comparison with experiments could distinguish between the different models.

  15. Spatial and temporal imaging of long-range charge transport in perovskite thin films by ultrafast microscopy

    PubMed Central

    Guo, Zhi; Manser, Joseph S.; Wan, Yan; Kamat, Prashant V.; Huang, Libai

    2015-01-01

    Charge carrier diffusion coefficient and length are important physical parameters for semiconducting materials. Long-range carrier diffusion in perovskite thin films has led to remarkable solar cell efficiencies; however, spatial and temporal mechanisms of charge transport remain unclear. Here we present a direct measurement of carrier transport in space and in time by mapping carrier density with simultaneous ultrafast time resolution and ∼50-nm spatial precision in perovskite thin films using transient absorption microscopy. These results directly visualize long-range carrier transport of ∼220 nm in 2 ns for solution-processed polycrystalline CH3NH3PbI3 thin films. Variations of the carrier diffusion coefficient at the μm length scale have been observed with values ranging between 0.05 and 0.08 cm2 s−1. The spatially and temporally resolved measurements reported here underscore the importance of the local morphology and establish an important first step towards discerning the underlying transport properties of perovskite materials. PMID:26101051

  16. Beam transport and space charge compensation strategies (invited)

    NASA Astrophysics Data System (ADS)

    Meusel, O.; Droba, M.; Noll, D.; Schulte, K.; Schneider, P. P.; Wiesner, C.

    2016-02-01

    The transport of intense ion beams is affected by the collective behavior of this kind of multi-particle and multi-species system. The space charge expressed by the generalized perveance dominates the dynamical process of thermalisation, which leads to emittance growth. To prevent changes of intrinsic beam properties and to reduce the intensity dependent focusing forces, space charge compensation seems to be an adequate solution. In the case of positively charged ion beams, electrons produced by residual gas ionization and secondary electrons provide the space charge compensation. The influence of the compensation particles on the beam transport and the local degree of space charge compensation is given by different beam properties as well as the ion beam optics. Especially for highly charged ion beams, space charge compensation in combination with poor vacuum conditions leads to recombination processes and therefore increased beam losses. Strategies for providing a compensation-electron reservoir at very low residual gas pressures will be discussed.

  17. Beam transport and space charge compensation strategies (invited).

    PubMed

    Meusel, O; Droba, M; Noll, D; Schulte, K; Schneider, P P; Wiesner, C

    2016-02-01

    The transport of intense ion beams is affected by the collective behavior of this kind of multi-particle and multi-species system. The space charge expressed by the generalized perveance dominates the dynamical process of thermalisation, which leads to emittance growth. To prevent changes of intrinsic beam properties and to reduce the intensity dependent focusing forces, space charge compensation seems to be an adequate solution. In the case of positively charged ion beams, electrons produced by residual gas ionization and secondary electrons provide the space charge compensation. The influence of the compensation particles on the beam transport and the local degree of space charge compensation is given by different beam properties as well as the ion beam optics. Especially for highly charged ion beams, space charge compensation in combination with poor vacuum conditions leads to recombination processes and therefore increased beam losses. Strategies for providing a compensation-electron reservoir at very low residual gas pressures will be discussed. PMID:26932109

  18. Contactless Spectral-dependent Charge Carrier Lifetime Measurements in Silicon Photovoltaic Materials

    NASA Astrophysics Data System (ADS)

    Roller, John; Hamadani, Behrang; Dagenais, Mario

    Charge carrier lifetime measurements in bulk or unfinished photovoltaic (PV) materials allow for a more accurate estimate of power conversion efficiency in completed solar cells. In this work, carrier lifetimes in PV-grade silicon wafers are obtained by way of quasi-steady state photoconductance measurements. These measurements use a contactless RF system coupled with varying narrow spectrum input LEDs, ranging in wavelength from 460 nm to 1030 nm. Spectral dependent lifetime measurements allow for determination of bulk and surface properties of the material, including the intrinsic bulk lifetime and the surface recombination velocity. The effective lifetimes are fit to an analytical physics-based model to determine the desired parameters. Passivated and non-passivated samples are both studied and are shown to have good agreement with the theoretical model.

  19. Temporary Charge Carrier Separation Dominates the Photoluminescence Decay Dynamics of Colloidal CdSe Nanoplatelets.

    PubMed

    Rabouw, Freddy T; van der Bok, Johanna C; Spinicelli, Piernicola; Mahler, Benoît; Nasilowski, Michel; Pedetti, Silvia; Dubertret, Benoît; Vanmaekelbergh, Daniël

    2016-03-01

    Luminescent colloidal CdSe nanoplatelets with atomically defined thicknesses have recently been developed, and their potential for various applications has been shown. To understand their special properties, experiments have until now focused on the relatively short time scales of at most a few nanoseconds. Here, we measure the photoluminescence decay dynamics of colloidal nanoplatelets on time scales up to tens of microseconds. The excited state dynamics are found to be dominated by the slow (∼μs) dynamics of temporary exciton storage in a charge-separated state, previously overlooked. We study the processes of charge carrier separation and exciton recovery in pure CdSe nanoplatelets as well as in core-crown and core-shell CdSe/CdS nanoplatelets with high ensemble quantum yields of 50%, and discuss the implications. Our work highlights the importance of reversible charge carrier trapping and experiments over a wide range of time scales for the understanding of colloidal nanoemitters in general and nanoplatelets in particular. PMID:26863992

  20. Charge transport and device physics of layered-crystalline organic semiconductors (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Hasegawa, Tatsuo

    2015-10-01

    Here we present and discuss our recent investigations into the understanding of microscopic charge transport, novel film processing technologies, and a development of layered-crystalline organic semiconductors for high performance OTFTs. We first discuss the microscopic charge transport in the OTFTs, as investigated by field-induced electron spin resonance spectroscopy. The technique can detect signals due to tiny amount of field-induced carriers, accumulated at the semiconductor-insulator interfaces. Following aspects are presented and discussed; 1) Carrier motion within the crystalline domains can be understood in terms of the trap-and-release transport, 2) charge trap states are spatially extended over several sites depending on the trap levels, and 3) the intra- and inter-domain transport can be discriminated by anisotropic electron spin resonance measurements. Next we discuss novel print production technologies for organic semiconductors showing high layered crystallinity. The concept of "printed electronics" is now regarded as a realistic paradigm to manufacture light-weight, thin, and impact-resistant electronics devices, although production of highly crystalline semiconductor films may be incompatible with conventional printing process. We here present printing techniques for manufacturing high performance OTFTs; 1) double-shot inkjet printing for small-molecule-based semiconductors, and 2) push-coating for semiconducting polymers. We demonstrate that both processes are useful to manufacture high quality semiconductor layers with the high layered crystallinity.

  1. Charge Carrier Dynamics of Quantum Confined Semiconductor Nanoparticles Analyzed via Transient Absorption Spectroscopy

    NASA Astrophysics Data System (ADS)

    Thibert, Arthur Joseph, III

    Semiconductor nanoparticles are tiny crystalline structures (typically range from 1 - 100 nm) whose shape in many cases can be dictated through tailored chemical synthesis with atomic scale precision. The small size of these nanoparticles often results in quantum confinement (spatial confinement of wave functions), which imparts the ability to manipulate band-gap energies thus allowing them to be optimally engineered for different applications (i.e., photovoltaics, photocatalysis, imaging). However, charge carriers excited within these nanoparticles are often involved in many different processes: trapping, trap migration, Auger recombination, non-radiative relaxation, radiative relaxation, oxidation / reduction, or multiple exciton generation. Broadband ultrafast transient absorption laser spectroscopy is used to spectrally resolve the fate of excited charge carriers in both wavelength and time, providing insight as to what synthetic developments or operating conditions will be necessary to optimize their efficiency for certain applications. This thesis outlines the effort of resolving the dynamics of excited charge carriers for several Cd and Si based nanoparticle systems using this experimental technique. The thesis is organized into five chapters and two appendices as indicated below. Chapter 1 provides a brief introduction to the photophysics of semiconductor nanoparticles. It begins by defining what nanoparticles, semiconductors, charge carriers, and quantum confinement are. From there it details how the study of charge carrier dynamics within nanoparticles can lead to increased efficiency in applications such as photocatalysis. Finally, the experimental methodology associated with ultrafast transient absorption spectroscopy is introduced and its power in mapping charge carrier dynamics is established. Chapter 2 (JPCC, 19647, 2011) introduces the first of the studied samples: water-solubilized 2D CdSe nanoribbons (NRs), which were synthesized in the Osterloh laboratory (UCD). The measured signals were decomposed into the constituent dynamics of three transient populations: hot tightly bound excitons, relaxed tightly bound excitons, and separated trapped carriers (holes and electrons). The influenes of three external factors affecting the observed dynamics were explored: (1) excitation wavelength, (2) excitation fluence, and (3) presence of the hole scavenger HS -. Both higher-energy excitation photons and higher-intensity excitation induce slower relaxation of charge carriers to the band edge due to the need to dissipate excess excitation energy. Nonlinear decay kinetics of the relaxed exciton population is observed and demonstrated to arise from bimolecular trapping of excitons with low-density trap sites located at CdSe NR surface sites instead of the commonly resolved multiparticle Auger recombination mechanism. This is supported by the observed linear excitation-fluence dependence of the trapped-carrier population that is n umerically simulated and found to deviate from the excitation fluence dependence expected of Auger recombination kinetics. Introducing hole scavenging HS- has a negligible effect on the exciton kinetics, including migration and dissociation, and instead passivates surface trap states to induce the rapid elimination of holes after exciton dissociation. This increases the lifetime of the reactive electron population and increases measured photocatalytic H2 generation activity. A broad (200 nm) and persistent (20 ps) stimulated emission observed in the tightly bound excitons suggests their potential use as broadband microlasers. In chapter 3 (JPCL, 2688, 2011), the photocatalytic H2O splitting activities of CdSe and CdSe/CdS core/shell quantum dots, which were also synthesized in the Osterloh laboratory (UCD) are contrasted. CdSe/CdS core/shell quantum dots constructed from 4.0 nm CdSe quantum dots are shown to be strongly active for visible-light-driven photocatalytic H2 evolution in 0.1M Na 2S/Na2SO3 solution with a turnover number of 9.94 after 5 h at 103.9 μmol/h. CdSe quantum dots themselves are only marginally active in 0.1 M Na2S/Na2SO3 solution with a turnover number of 1.10 after 5 h at 11.53 μmol/h, while CdSe quantum dots in pure H2O are found to be completely inactive. Broad-band transient absorption spectroscopy is used to elucidate the mechanisms that facilitate the enhancement in the CdSe core/shell quantum dots, which is attributed to passivation of surface-deep trap states with energies lying below the reduction potential necessary for H2O reduction. Thus, it is shown that surface trapping dynamics and energetics can be manipulated to dictate the photocatalytic activities of novel CdSe quantum dot based photocatalytic materials. Chapter 4 builds upon this work examining the differences in dynamics that occur upon passivation of water soluble CdZnS alloy cores with ZnS shells, which were produced in the Snee laboratory (UI Chicago), via 400 nm pump broadband probe ultrafast transient absorption spectroscopy, and global analysis modeling. We also examine the perturbation invoked on charge carrier dynamics caused by growing Pd nanoparticles on the CdZnS/ZnS shell surface in-situ and note the cyclical charge carrier transfer that takes place. Both the CdZnS core and CdZnS/ZnS core/shell quantum dots exhibit unusually long lived excited states (much > 8 ns) while the CdZnS/ZnS.Pd tandem core/shell quantum dots recover much quicker (~3 ns). Additionally, ultrafast excitation fluence dependencies are used to characterize Auger recombination and the presence of two different trap state populations observable in the visible spectrum. In chapter 5 (JACS, 20664, 2011), we switch from examining direct band-gap chalcogenide based quantum dots to Si quantum dots synthesized in the Kauzlarich laboratory (UCD), which exhibit an indirect band-gap. Here a microwave-assisted reaction to produce hydrogen-terminated silicon quantum dots is discussed. The Si quantum dots were passivated for water solubility via two different methods: hydrosilylation produced 3-aminopropenyl-terminated Si quantum dots, and a modified Stöber process produced silica-encapsulated Si quantum dots. Both methods produce water-soluble quantum dots with maximum emission at 414 nm, and after purification, the quantum dots exhibit intrinsic fluorescence quantum yield efficiencies of 15 and 23%, respectively. Even though the quantum dots have different surfaces, they exhibit nearly identical absorption and fluorescence spectra. Femtosecond transient absorption spectroscopy was used for temporal resolution of the photoexcited carrier dynamics between the quantum dots and ligand. The transient dynamics of the 3-aminopropenyl-terminated Si quantum dots is interpreted as a formation and decay of a charge-transfer excited state between the delocalized π electrons of the carbon linker and the Si core excitons. This charge transfer state is stable for ~4 ns before reverting back to a more stable, long-living species. The silica-encapsulated Si QDs show a simpler spectrum without charge transfer dynamics. Appendix I (Chem. Mat., 1220, 2010), addresses the long-time (μs) transient kinetics associated with TiO2 and layered titanates (TBA2 2Ti4O9), which were synthesized in the Osterloh laboratory (UCD). Transient absorption data reveal that photogenerated electrons become trapped in mid band-gap states, from which they decay exponentially with a time-constant of 43.67 + 0.28 ms in titanates, which is much slower than the 68 + 1 ns observed for TiO2 nanocrystals. The slower kinetics observed for the TBA 2Ti4O9 nanosheets originates either from the presence of deeper trap sites on the sheets vs. the nanoparticles, more trap sites, or from more effective electron-hole separation because of the micrometer dimensions of the 2D lattice. Appendix II, depicts the visible solar spectrum at sea level detailing the percentage of photons and energy that exist within certain wavelength ranges.

  2. Carrier transport in graphite/Si{sub 3}N{sub 4}-nanobelt/PtIr Schottky barrier diodes

    SciTech Connect

    Bi, Jinghui; Wei, Guodong; Shang, Minghui; Gao, Fengmei; Yang, Weiyou E-mail: weiyouyang@tsinghua.org.cn; Tang, Bin E-mail: weiyouyang@tsinghua.org.cn

    2014-11-10

    Understanding the roles of contacts and interfaces between metals and semiconductors is critically important for exploring nanostructure-based nanodevices. The present study shed some light on the dominated mechanism of size-dependent carrier transfer in the Schottky barrier diodes configured by the Pt-Ir/Si{sub 3}N{sub 4}-nanobelt/graphite (metal-semiconductor-metal (MSM)) sandwiched structure via a conductive atomic force microscopy using nanobelts with various thicknesses. The observed I-V behaviors suggested that the charge transports under the low and high biases were dominated by the reverse-biased Schottky barrier and space-charge-limited current (SCLC), respectively. The intermediate region between the low and high biases presented the transition between the Ohmic and SCLC behaviors, in which the ≡Si and =N dangling bonds acted as the defects within the Si{sub 3}N{sub 4} nanobelt surface are predominant in the charge transfer.

  3. Influence of defects on excess charge carrier kinetics studied by transient PC and transient PA

    SciTech Connect

    Feist, H.; Kunst, M.; Swiatkowski, C.

    1997-07-01

    By comparison of transient photoconductivity (TPC) and transient photoinduced absorption (PA) the influence of the density of states in the bandgap on excess charge carrier kinetics is studied for a-Si:H films deposited at different temperatures and for state of the art a-Si:H films in two different states of light soaking. In both series the rising deep defect density leads to an enhancement of electron trapping rather than recombination via deep defects. The samples deposited at temperatures lower than 250 C additionally show a lower effective electron mobility, i.e., a broader conduction band tail.

  4. Influence of Exciton Lifetime on Charge Carrier Dynamics in an Organic Heterostructure

    SciTech Connect

    Agrawal, Kanika L.; Sykes, Matthew E.; An, Kwang Hyup; Frieberg, Bradley; Green, P. F.; Shtein, Max

    2013-03-18

    Interactions between charge carriers and excitons, as well as between excitons and optical cavity modes in organic optoelectronic devices are fundamental to their operational limits and chief in preventing the realization of certain phenomena, such as electrically pumped organic lasing. We uncovered a previously unreported phenomenon, wherein optical cavity-modulated exciton decay rate leads to a concomitant modulation in the electrical current of an archetypal NPD/Alq₃ organic light emitting device operated in forward bias. The magnitude of this variation is sensitive to the local dielectric environment of the device and is found to be as large as 15%.

  5. Localized excited charge carriers generate ultrafast inhomogeneous strain in the multiferroic BiFeO3.

    PubMed

    Schick, Daniel; Herzog, Marc; Wen, Haidan; Chen, Pice; Adamo, Carolina; Gaal, Peter; Schlom, Darrell G; Evans, Paul G; Li, Yuelin; Bargheer, Matias

    2014-03-01

    We apply ultrafast x-ray diffraction with femtosecond temporal resolution to monitor the lattice dynamics in a thin film of multiferroic BiFeO3 after above-band-gap photoexcitation. The sound-velocity limited evolution of the observed lattice strains indicates a quasi-instantaneous photoinduced stress which decays on a nanosecond time scale. This stress exhibits an inhomogeneous spatial profile evidenced by the broadening of the Bragg peak. These new data require substantial modification of existing models of photogenerated stresses in BiFeO3: the relevant excited charge carriers must remain localized to be consistent with the data. PMID:24655276

  6. Long-lived charge carrier dynamics in polymer/quantum dot blends and organometal halide perovskites

    NASA Astrophysics Data System (ADS)

    Nagaoka, Hirokazu

    Solution-processable semiconductors offer a potential route to deploy solar panels on a wide scale, based on the possibility of reduced manufacturing costs by using earth-abundant materials and inexpensive production technologies, such as inkjet or roll-to-roll printing. Understanding the fundamental physics underlying device operation is important to realize this goal. This dissertation describes studies of two kinds of solar cells: hybrid polymer/PbS quantum dot solar cells and organometal halide perovskite solar cells. Chapter two discusses details of the experimental techniques. Chapter three and four explore the mechanisms of charge transfer and energy transfer spectroscopically, and find that both processes contribute to the device photocurrent. Chapter four investigates the important question of how the energy level alignment of quantum dot acceptors affects the operation of hybrid polymer/quantum dot solar cells, by making use of the size-tunable energy levels of PbS quantum dots. We observe that long-lived charge transfer yield is diminished at larger dot sizes as the energy level offset at the polymer/quantum dot interface is changed through decreasing quantum confinement using a combination of spectroscopy and device studies. Chapter five discusses the effects of TiO2 surface chemistry on the performance of organometal halide perovskite solar cells. Specifically, chapter five studies the effect of replacing the conventional TiO2 electrode with Zr-doped TiO2 (Zr-TiO2). We aim to explore the correlation between charge carrier dynamics and device studies by incorporating zirconium into TiO2. We find that, compared to Zr-free controls, solar cells employing Zr-TiO2 give rise to an increase in overall power conversion efficiency, and a decrease in hysteresis. We also observe longer carrier lifetimes and higher charge carrier densities in devices on Zr-TiO2 electrodes at microsecond times in transient photovoltage experiments, as well as at longer persistent photovoltages extending from ~millisecond to tens of sec. Finally, we characterize the combined effects of pyridine treatment and Zr-TiO2 on device performance and carrier lifetimes.

  7. Recombination of charge carriers in the GaAs-based p-i-n diode

    SciTech Connect

    Ayzenshtat, G. I.; Yushenko, A. Y.; Gushchin, S. M.; Dmitriev, D. V.; Zhuravlev, K. S.; Toropov, A. I.

    2010-10-15

    It is established that the radiative recombination of charge carriers plays a substantial role in the GaAs-based p-i-n diodes at high densities of the forward current. It is shown experimentally that the diodes operating in microwave integrated circuits intensely emit light in the IR range with wavelengths from 890 to 910 nm. The obtained results indicate the necessity of taking into account the features of recombination processes in the GaAs-based microwave p-i-n diodes.

  8. Evaluation of anisotropic charge carrier mobility of perylene single crystals by time-of-flight method

    NASA Astrophysics Data System (ADS)

    Kougo, Junichi; Ishikawa, Ken

    2016-03-01

    The charge carrier mobilities along the vertical and lateral directions of perylene platelet single crystals were measured by the time-of-flight (TOF) method. In the lateral directional measurement, the entire region between electrodes was irradiated to obtain measurable signals. The transient photocurrent was different from the conventional TOF measurements; hence, we developed an analytic method for lateral directional measurement. The electron mobilities along the thickness and lateral directions were 0.33 and 2.0 cm2·V-1·s-1 and the hole mobilities were 0.12 and 0.6 cm2·V-1·s-1, respectively.

  9. Hot Carrier Transport at the Graphene-Metal Interface Induced by Strong Lateral Photo-Dember Effect

    NASA Astrophysics Data System (ADS)

    Liu, Chang-Hua; Chang, You-Chia; Dissanayake, Nanditha; Zhang, Yaozhong; Zhong, Zhaohui

    2013-03-01

    Ultrafast photo-excitation in a semiconductor can lead to transient spatial charge gradient if electrons and holes have different drift velocities. The charge gradient builds up the transient electric field and causes the subsequent terahertz pulse emission. This phenomenon, known as the photo-Dember effect, was typically considered insignificant in graphene due to its similar electron and hole mobilities. Here, we observe hot carrier transport at the graphene-metal interface driven by the photo-Dember electric field under femtosecond pulse laser excitation. The polarity of hot carrier transport is determined by the asymmetry of electron and hole mobilities of the graphene device and cannot be flipped sign by tuning graphene doping level. This indicates the formation of strong photo-Dember field, dominating over the graphene/metal built-in electric field or thermal electric field. We further analyze the spatial distribution and temporal evolution of the transient electric field near the contact edge by using the drift-diffusion model. The modeling results suggest that strong photo-Dember effect is caused by the low electronic specific heat of graphene and a huge charge gradient near the graphene-metal interface under pulse laser excitation. This work was supported from the Donors of the American Chemical Society Petroleum Research Fund and the U-M/SJTU Collaborative Research Program in Renewable Energy Science and Technology.

  10. Temperature dependent investigation of carrier transport, injection, and densities in 808 nm AlGaAs multi-quantum-well active layers for VCSELs

    NASA Astrophysics Data System (ADS)

    Engelhardt, Andreas P.; Kolb, Johanna S.; Römer, Friedhard; Weichmann, Ulrich; Moench, Holger; Witzigmann, Bernd

    2014-05-01

    The electro-optical efficiency of semiconductor vertical-cavity surface-emitting lasers (VCSELs) strongly depends on the efficient carrier injection into the quantum wells (QWs) in the laser active region. However, carrier injection degrades with increasing temperature which limits the VCSEL performance particularly in high power applications where self heating imposes high temperatures in operation. By simulation we investigate the transport of charge carriers in 808 nm AlGaAs multi-quantum-well active layers with special attention to the temperature dependence of carrier injection into the QWs. Experimental reference data was extracted from oxide-confined, top-emitting VCSELs. The transport simulations follow a drift-diffusion-model complemented by a customized, energy-resolved, semi-classical carrier capture theory. QW gain was calculated in the screened Hartree-Fock approximation with band structures from 8x8 k.p-theory. Using the gain data and by setting losses and the optical confinement factor according to experimental reference results, the appropriate threshold condition and threshold carrier densities in the QWs for a VCSEL are established in simulation for all transport considerations. With the combination of gain and transport model, we can explain experimental reference data for the injection efficiency and threshold current density. Our simulations show that the decreasing injection efficiency with temperature is not solely due to increased thermionic escape of carriers from the QWs. Carrier injection is also hampered by state filling in the QWs initiated from higher threshold carrier densities with temperature. Consequently, VCSEL properties not directly related to the active layer design like optical out-coupling or internal losses link the temperature dependent carrier injection to VCSEL mirror design.

  11. CHARACTERIZING COUPLED CHARGE TRANSPORT WITH MULTISCALE MOLECULAR DYNAMICS

    SciTech Connect

    Swanson, Jessica

    2011-08-31

    This is the final progress report for Award DE-SC0004920, entitled 'Characterizing coupled charge transport with multi scale molecular dynamics'. The technical abstract will be provided in the uploaded report.

  12. The role of charge-transfer integral in determining and engineering the carrier mobilities of 9,10-di(2-naphthyl)anthracene compounds

    NASA Astrophysics Data System (ADS)

    Tse, S. C.; So, S. K.; Yeung, M. Y.; Lo, C. F.; Wen, S. W.; Chen, C. H.

    2006-05-01

    The charge transporting properties of t-butylated 9,10-di(2-naphthyl)anthracene (ADN) compounds have been investigated experimentally and computationally in relation to their molecular structures. The ADN compounds are found to be ambipolar with both electron and hole mobilities in the range of 1-4 × 10 -7 cm 2 V -1 s -1 (electric field 0.5-0.8 MV/cm). As the degree of t-butylation increases, the carrier mobility decreases progressively. The mobility reduction was examined by Marcus theory of reorganization energies. All ADN compounds possess similar reorganization energies of ˜0.3 eV. The reduction of carrier mobilities with increasing t-butylation can be attributed to a decrease in the charge-transfer integral or the wavefunction overlap.

  13. An acoustic charge transport imager for high definition television applications

    NASA Technical Reports Server (NTRS)

    Hunt, William D.; Brennan, Kevin F.; Summers, Chris J.

    1992-01-01

    In this report we present the progress during the second six month period of the project. This includes both experimental and theoretical work on the acoustic charge transport (ACT) portion of the chip, the theoretical program modelling of both the avalanche photodiode (APD) and the charge transfer and overflow transistor and the materials growth and fabrication part of the program.

  14. Carrier injection, transport, and their effects on photoinduced dielectric breakdown in single crystalline paraffin (n-C36H74)

    NASA Astrophysics Data System (ADS)

    Neff, H.; Lange, P.

    1992-11-01

    Carrier injection and transport in single crystalline paraffin (n-C36H74) have been investigated on the basis of time-of-flight data and dc-photo injection experiments. The undoped, high-quality molecular crystal under study represents an isoelectronic analog to polyethylene. Charge-carrier mobilities in the range μ≤0.1 cm2 V-1 s-1 at room temperature have been recorded for both electrons and holes at moderate external electric fields. A clear correlation has been found between transport properties and the molecular structure. Regarding defect properties, significant differences have been observed for both types of carriers in the material. The presence of intrinsic deep traps is crucial to the transport properties of electrons and dominates the overall behavior of the material, but are virtually absent for injected holes. A decrease of the electron mobility with increasing external fields has been observed for electrons, while the opposite behavior has been found for injected holes. Photoinduced avalanching is largely due to a trap-enhanced field effect, as reported in the literature, where the massive injection of holes from the counter electrode is initiated above a critical external field.

  15. Hyperfine-induced spin relaxation of a diffusively moving carrier in low dimensions: Implications for spin transport in organic semiconductors

    SciTech Connect

    Mkhitaryan, V. V.; Dobrovitski, V. V.

    2015-08-24

    The hyperfine coupling between the spin of a charge carrier and the nuclear spin bath is a predominant channel for the carrier spin relaxation in many organic semiconductors. We theoretically investigate the hyperfine-induced spin relaxation of a carrier performing a random walk on a d-dimensional regular lattice, in a transport regime typical for organic semiconductors. We show that in d=1 and 2, the time dependence of the space-integrated spin polarization P(t) is dominated by a superexponential decay, crossing over to a stretched-exponential tail at long times. The faster decay is attributed to multiple self-intersections (returns) of the random-walk trajectories, which occur more often in lower dimensions. We also show, analytically and numerically, that the returns lead to sensitivity of P(t) to external electric and magnetic fields, and this sensitivity strongly depends on dimensionality of the system (d=1 versus d=3). We investigate in detail the coordinate dependence of the time-integrated spin polarization σ(r), which can be probed in the spin-transport experiments with spin-polarized electrodes. We also demonstrate that, while σ(r) is essentially exponential, the effect of multiple self-intersections can be identified in transport measurements from the strong dependence of the spin-decay length on the external magnetic and electric fields.

  16. Hyperfine-induced spin relaxation of a diffusively moving carrier in low dimensions: Implications for spin transport in organic semiconductors

    DOE PAGESBeta

    Mkhitaryan, V. V.; Dobrovitski, V. V.

    2015-08-24

    The hyperfine coupling between the spin of a charge carrier and the nuclear spin bath is a predominant channel for the carrier spin relaxation in many organic semiconductors. We theoretically investigate the hyperfine-induced spin relaxation of a carrier performing a random walk on a d-dimensional regular lattice, in a transport regime typical for organic semiconductors. We show that in d=1 and 2, the time dependence of the space-integrated spin polarization P(t) is dominated by a superexponential decay, crossing over to a stretched-exponential tail at long times. The faster decay is attributed to multiple self-intersections (returns) of the random-walk trajectories, whichmore » occur more often in lower dimensions. We also show, analytically and numerically, that the returns lead to sensitivity of P(t) to external electric and magnetic fields, and this sensitivity strongly depends on dimensionality of the system (d=1 versus d=3). We investigate in detail the coordinate dependence of the time-integrated spin polarization σ(r), which can be probed in the spin-transport experiments with spin-polarized electrodes. We also demonstrate that, while σ(r) is essentially exponential, the effect of multiple self-intersections can be identified in transport measurements from the strong dependence of the spin-decay length on the external magnetic and electric fields.« less

  17. Correlation between thermal fluctuation effects and phase coherence factor in carrier transport of single-crystal organic semiconductors

    NASA Astrophysics Data System (ADS)

    Fukami, Tatsuya; Ishii, Hiroyuki; Kobayashi, Nobuhiko; Uemura, Takafumi; Sakai, Kenichi; Okada, Yugo; Takeya, Jun; Hirose, Kenji

    2015-04-01

    We find that the phase coherence factor derived from Hall effect measurements of single-crystal thin-film field-effect transistors of pentacene, which relates the intrinsic charge transport with the phase coherence, has a strong correlation with the thermal fluctuations of transfer energies between neighboring molecules. This observation also holds true for other organic semiconductors such as tetracene, dianthrathiophene (DAT)-V, and dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). This gives us clues for constructing flexible molecular systems with high carrier mobility.

  18. Verification of the dispersive charge transport in a hydrazone:polycarbonate molecularly doped polymer

    NASA Astrophysics Data System (ADS)

    Tyutnev, Andrey P.; Saenko, Vladimir S.; Pozhidaev, Evgenii D.; Kolesnikov, Vladislav A.

    2009-03-01

    We report results of specially planned experiments intended to verify the dispersive character of the charge carrier transport in polycarbonate molecularly doped with hydrazone at 30 wt% loading, using for this purpose samples specifically featuring a well-defined plateau on a linear-linear plot. For this purpose we propose a new variant of the time-of-flight technique which allows easy changing of the generation zone width from about 0.5 µm (surface excitation) through intermediate values to full sample thickness (bulk excitation). To achieve this, we use electron pulses of 3-50 keV energy rather than traditional light pulses provided by lasers. Experimental results corroborated by numerical calculations uniquely prove that carrier transport in this molecularly doped polymer is dispersive, with the dispersion parameter equal to 0.75. Nevertheless, the mobility field dependence follows the famous Poole-Frenkel law.

  19. Theoretical predictions on the electronic structure and charge carrier mobility in 2D phosphorus sheets.

    PubMed

    Xiao, Jin; Long, Mengqiu; Zhang, Xiaojiao; Ouyang, Jun; Xu, Hui; Gao, Yongli

    2015-01-01

    We have investigated the electronic structure and carrier mobility of four types of phosphorous monolayer sheet (?-P, ?-P,?-P and ?-P) using density functional theory combined with Boltzmann transport method and relaxation time approximation. It is shown that ?-P, ?-P and ?-P are indirect gap semiconductors, while ?-P is a direct one. All four sheets have ultrahigh carrier mobility and show anisotropy in-plane. The highest mobility value is ~3 10(5) cm(2)V(-1)s(-1), which is comparable to that of graphene. Because of the huge difference between the hole and electron mobilities, ?-P, ?-P and ?-P sheets can be considered as n-type semiconductors, and ?-P sheet can be considered as a p-type semiconductor. Our results suggest that phosphorous monolayer sheets can be considered as a new type of two dimensional materials for applications in optoelectronics and nanoelectronic devices. PMID:26035176

  20. An autonomous photosynthetic device in which all charge carriers derive from surface plasmons.

    PubMed

    Mubeen, Syed; Lee, Joun; Singh, Nirala; Krämer, Stephan; Stucky, Galen D; Moskovits, Martin

    2013-04-01

    Solar conversion to electricity or to fuels based on electron-hole pair production in semiconductors is a highly evolved scientific and commercial enterprise. Recently, it has been posited that charge carriers either directly transferred from the plasmonic structure to a neighbouring semiconductor (such as TiO₂) or to a photocatalyst, or induced by energy transfer in a neighbouring medium, could augment photoconversion processes, potentially leading to an entire new paradigm in harvesting photons for practical use. The strong dependence of the wavelength at which the local surface plasmon can be excited on the nanostructure makes it possible, in principle, to design plasmonic devices that can harvest photons over the entire solar spectrum and beyond. So far, however, most such systems show rather small photocatalytic activity in the visible as compared with the ultraviolet. Here, we report an efficient, autonomous solar water-splitting device based on a gold nanorod array in which essentially all charge carriers involved in the oxidation and reduction steps arise from the hot electrons resulting from the excitation of surface plasmons in the nanostructured gold. Each nanorod functions without external wiring, producing 5 × 10(13) H₂ molecules per cm(2) per s under 1 sun illumination (AM 1.5 and 100 mW cm(-2)), with unprecedented long-term operational stability. PMID:23435280

  1. Electrical Conductivity of Rocks and Dominant Charge Carriers. Part 1; Thermally Activated Positive Holes

    NASA Technical Reports Server (NTRS)

    Freund, Friedemann T.; Freund, Minoru M.

    2012-01-01

    The prevailing view in the geophysics community is that the electrical conductivity structure of the Earth's continental crust over the 5-35 km depth range can best be understood by assuming the presence of intergranular fluids and/or of intragranular carbon films. Based on single crystal studies of melt-grown MgO, magma-derived sanidine and anorthosite feldspars and upper mantle olivine, we present evidence for the presence of electronic charge carriers, which derive from peroxy defects that are introduced during cooling, under non-equilibrium conditions, through a redox conversion of pairs of solute hydroxyl arising from dissolution of H2O.The peroxy defects become thermally activated in a 2-step process, leading to the release of defect electrons in the oxygen anion sublattice. Known as positive holes and symbolized by h(dot), these electronic charge carriers are highly mobile. Chemically equivalent to O(-) in a matrix of O(2-) they are highly oxidizing. Being metastable they can exist in the matrix of minerals, which crystallized in highly reduced environments. The h(dot) are highly mobile. They appear to control the electrical conductivity of crustal rocks in much of the 5-35 km depth range.

  2. Nanoscale Imaging of Charge Carrier and Exciton Trapping at Structural Defects in Organic Semiconductors.

    PubMed

    Große, Christoph; Gunnarsson, Olle; Merino, Pablo; Kuhnke, Klaus; Kern, Klaus

    2016-03-01

    Charge carrier and exciton trapping in organic semiconductors crucially determine the performance of organic (opto-)electronic devices such as organic field-effect transistors, light-emitting diodes, or solar cells. However, the microscopic origin of the relevant traps generally remains unclear, as most spectroscopic techniques are unable to simultaneously probe the electronic and morphological structure of individual traps. Here, we employ low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS) as well as tight-binding calculations derived from ab initio calculations to image the localized electronic states arising at structural defects in thin C60 films (<10 ML). The spatially and spectrally resolved STM-induced luminescence at these states reveals an enhanced radiative decay of excitons, which is interpreted in terms of the local symmetry lowering and the trapping of excitons by an X-trap. The combined mapping of the STM-induced luminescence, electronic structure, and morphology thus provides new insights into the origin and characteristics of individual exciton traps in organic semiconductors and offers new avenues to study charge carrier and exciton dynamics on molecular scales. PMID:26871739

  3. Surface group modification and carrier transport properties of layered transition metal carbides (Ti2CTx, T: -OH, -F and -O)

    NASA Astrophysics Data System (ADS)

    Lai, Shen; Jeon, Jaeho; Jang, Sung Kyu; Xu, Jiao; Choi, Young Jin; Park, Jin-Hong; Hwang, Euyheon; Lee, Sungjoo

    2015-11-01

    In spite of recent significant research into various two-dimensional (2D) materials after the emergence of graphene, the development of a new 2D material that provides both high mobility and an appropriate energy band gap (which are crucial for various device applications) remains elusive. In this report, we demonstrate that the carrier transport behaviour of 2D Ti2CTx, which belongs to the family of 2D transition metal carbides and nitrides, can be tuned by modifying the surface group Tx (-OH, -F, and -O). Our results show that 2D Ti2C(OH)xFy and Ti2COx films can be obtained via simple chemical treatment, thermal annealing, and mechanical exfoliation processes. For the first time, we study the carrier transport properties of 2D Ti2CTx field effect transistors (FETs), obtaining the high field effect carrier mobilities of 104 cm2 V-1 s-1 at room temperature. The temperature dependent resistivity of the Ti2COx film exhibits semiconductor like Arrhenius behaviour at zero gate voltage, from which we estimate the energy gap of 80 meV. One interesting feature of the FETs based on transition metal carbides is that the field effect mobility at room temperature is less sensitive to the measured transport gaps, which may arise from the dominant charge transport of activated carriers over the narrow energy gaps of the transition metal carbides. Our results open up the possibility that new 2D materials with high mobilities and appropriate band gaps can be achieved, and broaden the range of electronic device applications of Ti2CTx films.In spite of recent significant research into various two-dimensional (2D) materials after the emergence of graphene, the development of a new 2D material that provides both high mobility and an appropriate energy band gap (which are crucial for various device applications) remains elusive. In this report, we demonstrate that the carrier transport behaviour of 2D Ti2CTx, which belongs to the family of 2D transition metal carbides and nitrides, can be tuned by modifying the surface group Tx (-OH, -F, and -O). Our results show that 2D Ti2C(OH)xFy and Ti2COx films can be obtained via simple chemical treatment, thermal annealing, and mechanical exfoliation processes. For the first time, we study the carrier transport properties of 2D Ti2CTx field effect transistors (FETs), obtaining the high field effect carrier mobilities of 104 cm2 V-1 s-1 at room temperature. The temperature dependent resistivity of the Ti2COx film exhibits semiconductor like Arrhenius behaviour at zero gate voltage, from which we estimate the energy gap of 80 meV. One interesting feature of the FETs based on transition metal carbides is that the field effect mobility at room temperature is less sensitive to the measured transport gaps, which may arise from the dominant charge transport of activated carriers over the narrow energy gaps of the transition metal carbides. Our results open up the possibility that new 2D materials with high mobilities and appropriate band gaps can be achieved, and broaden the range of electronic device applications of Ti2CTx films. Electronic supplementary information (ESI) available: SEM images and elemental mapping of Ti2CTx, thickness dependence of the Raman spectrum, and morphologies of Ti2CTx with different thicknesses. See DOI: 10.1039/c5nr06513e

  4. Enhanced Visible Light-Induced Charge Separation and Charge Transport in Cu2O-Based Photocathodes by Urea Treatment.

    PubMed

    Wang, Peng; Tang, Yiming; Wen, Xiaoming; Amal, Rose; Ng, Yun Hau

    2015-09-16

    Carrier density, photocharge transfer kinetics, and charge transfer resistance of the anodized Cu-Cu2O-CuO photocathode were greatly improved using thermal treatment with urea. Time-correlated single-photon counting (TCSPC) results revealed the faster electron transfer kinetics from Cu2O to CuO in the urea-treated Cu-Cu2O-CuO composite photoelectrodes. Preservation of the metallic copper component via the intermediate Cu3N during the treatment facilitated higher bulk conductance of the Cu-Cu2O-CuO photocathode for improved charge transport. Higher carrier density was also observed in the urea-treated photoelectrode, which was possibly attributed to the presence of nitrogen as a dopant. Furthermore, the compact outer layer of CuO protected the underlayer Cu2O from being in direct contact with the aqueous solution. This suppressed the photocorrosion of Cu2O and resulted in the higher photostability of the Cu-Cu2O-CuO film. When these advantages were combined, the urea-treated Cu-Cu2O-CuO film showed a higher photocurrent of 2.2 mA/cm2 and improved stability versus that of the conventional Cu-Cu2O-CuO film (1.2 mA/cm2). To improve the charge transfer kinetics and carrier density, this paper provides a new strategy for synthesizing effective and stable Cu2O-based photoelectrodes by using urea treatment. PMID:26305707

  5. Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors

    PubMed Central

    Chu, Leiqiang; Schmidt, Hennrik; Pu, Jiang; Wang, Shunfeng; Özyilmaz, Barbaros; Takenobu, Taishi; Eda, Goki

    2014-01-01

    Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically exfoliated mono-, bi-, and trilayer MoS2 sheets over a wide range of carrier densities realized by a combination of ion gel top gate and SiO2 back gate, which allows us to achieve high charge carrier (>1013 cm−2) densities. We discuss the gating properties of the devices as a function of layer thickness and demonstrate resistivities as low as 1 kΩ for monolayer and 420 Ω for bilayer devices at 10 K. We show that from the capacitive coupling of the two gates, quantum capacitance can be roughly estimated to be on the order of 1 μF/cm2 for all devices studied. The temperature dependence of the carrier mobility in the high density regime indicates that short-range scatterers limit charge transport at low temperatures. PMID:25465059

  6. Simulation of charge transport in pixelated CdTe

    PubMed Central

    Kolstein, M.; Ario, G.; Chmeissani, M.; De Lorenzo, G.

    2014-01-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). The design is based on the use of a pixelated CdTe Schottky detector to have optimal energy and spatial resolution. An individual read-out channel is dedicated for each detector voxel of size 1 1 2 mm3 using an application-specific integrated circuit (ASIC) which the VIP project has designed, developed and is currently evaluating experimentally. The behaviour of the signal charge carriers in CdTe should be well understood because it has an impact on the performance of the readout channels. For this purpose the Finite Element Method (FEM) Multiphysics COMSOL software package has been used to simulate the behaviour of signal charge carriers in CdTe and extract values for the expected charge sharing depending on the impact point and bias voltage. The results on charge sharing obtained with COMSOL are combined with GAMOS, a Geant based particle tracking Monte Carlo software package, to get a full evaluation of the amount of charge sharing in pixelated CdTe for different gamma impact points. PMID:25729404

  7. Simulation of charge transport in pixelated CdTe

    NASA Astrophysics Data System (ADS)

    Kolstein, M.; Ariño, G.; Chmeissani, M.; De Lorenzo, G.

    2014-12-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). The design is based on the use of a pixelated CdTe Schottky detector to have optimal energy and spatial resolution. An individual read-out channel is dedicated for each detector voxel of size 1 × 1 × 2 mm3 using an application-specific integrated circuit (ASIC) which the VIP project has designed, developed and is currently evaluating experimentally. The behaviour of the signal charge carriers in CdTe should be well understood because it has an impact on the performance of the readout channels. For this purpose the Finite Element Method (FEM) Multiphysics COMSOL software package has been used to simulate the behaviour of signal charge carriers in CdTe and extract values for the expected charge sharing depending on the impact point and bias voltage. The results on charge sharing obtained with COMSOL are combined with GAMOS, a Geant based particle tracking Monte Carlo software package, to get a full evaluation of the amount of charge sharing in pixelated CdTe for different gamma impact points.

  8. On the mechanism of charge transport in pentacene.

    PubMed

    v Laarhoven, H A; Flipse, C F J; Koeberg, M; Bonn, M; Hendry, E; Orlandi, G; Jurchescu, O D; Palstra, T T M; Troisi, A

    2008-07-28

    Terahertz transient conductivity measurements are performed on pentacene single crystals, which directly demonstrate a strong coupling of charge carriers to low frequency molecular motions with energies centered around 1.1 THz. We present evidence that the strong coupling to low frequency motions is the factor limiting the conductivity in these organic semiconductors. Our observations explain the apparent paradox of the "bandlike" temperature dependence of the conductivity beyond the validity limit of the band model. PMID:18681667

  9. 31 CFR 337.2 - Transportation charges and risks.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance: Treasury 2 2014-07-01 2014-07-01 false Transportation charges and risks. 337.2 Section 337.2 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued... GOVERNING FEDERAL HOUSING ADMINISTRATION DEBENTURES Certificated Debentures § 337.2 Transportation...

  10. Scaling Theory for Percolative Charge Transport in Disordered Molecular Semiconductors

    NASA Astrophysics Data System (ADS)

    Cottaar, J.; Koster, L. J. A.; Coehoorn, R.; Bobbert, P. A.

    2011-09-01

    We present a scaling theory for charge transport in disordered molecular semiconductors that extends percolation theory by including bonds with conductances close to the percolating one in the random-resistor network representing charge hopping. A general and compact expression is given for the charge mobility for Miller-Abrahams and Marcus hopping on different lattices with Gaussian energy disorder, with parameters determined from numerically exact results. The charge-concentration dependence is universal. The model-specific temperature dependence can be used to distinguish between the hopping models.

  11. Verification of three dimensional charge transport simulations using ion microbeams

    SciTech Connect

    Horn, K.M.; Dodd, P.E.; Breese, M.B.H.; Doyle, B.L.

    1996-12-31

    Optically targeted, ion microbeams provide a useful means of exposing individual structures within an integrated circuit to ionizing radiation. With this tool, calibrated, low damage, charge collection spectra can be measured from specific circuit structures without preceding ion damage to the structure or surrounding circuitry. This paper presents comparisons of calibrated, low damage, ion microbeam- based charge collection measurements and three-dimensional, charge transport simulations of charge collection for isolated n- and p- channel field effect transistors under conducting and non-conducting bias conditions.

  12. Charge transport optimization in CZT ring-drift detectors

    NASA Astrophysics Data System (ADS)

    Boothman, V.; Alruhaili, A.; Perumal, V.; Sellin, P.; Lohstroh, A.; Sawhney, K.; Kachanov, S.

    2015-12-01

    Ring-drift design has been applied to large (7.5~\\text{mm}× 7.5~\\text{mm}× 2.3 mm) cadmium zinc telluride (CZT) devices. This low-noise, single-carrier-sensing configuration is the gold standard for spectroscopic silicon x-ray detectors. By combining the advantages of ring-drift with the high quantum efficiency and room-temperature operating capabilities of CZT, a simple and compact device for high-resolution spectroscopy of x-rays in the range 50–500 keV can be created. Quality of CZT crystals has improved greatly in recent years and electron-only sensing overcomes the problem of inherently poor hole transport in II–VI semiconductors. The spatial response of our 3-ring CZT device was studied by microbeam scanning while the voltages applied to all electrodes were systematically varied. Maximum active radius extended to 2.3 mm, beyond the second ring. Resolution was limited by electronic noise. Our results show that the lateral field and its ratio to the bulk field exert a crucial influence on active area, peak position and sensitivity. CZT and the device geometry were modelled in 3D with Sentaurus TCAD. Line scans were simulated and trends in performance with bias conditions matched experimental data, validating the model. We aimed to optimize the resolution, sensitivity and active radius of the device. Fields and charge drift were visualized and the active volume was mapped in 3D to improve understanding of the factors governing performance including number of rings, their widths, positions and bias.

  13. Charge Transport at Ti-Doped Hematite (001)/Aqueous Interfaces

    SciTech Connect

    Chatman, Shawn ME; Pearce, Carolyn I.; Rosso, Kevin M.

    2015-03-10

    Solid-state transport and electrochemical properties of Ti-doped hematite (001) epitaxial thin films (6.0, 8.3, and 16.6 at% Ti) were probed to achieve a better understanding of doped hematite for photoelectrochemical (PEC) applications. Room temperature resistivity measurements predict a resistivity minimum near 10 at% Ti doping, which can be rationalized as maximizing charge compensating Fe2+ concentration and Fe3+ electron accepting percolation pathways simultaneously. Temperature dependent resistivity data are consistent with small polaron hopping, revealing an activation energy that is Ti concentration dependent and commensurate with previously reported values (≈ 0.11 eV). In contact with inert electrolyte, linear Mott-Schottky data at various pH values indicate that there is predominantly a single donor for Ti-doped hematite at 6.0 at% Ti and 16.6 at% Ti concentrations. Two slope Mott-Schottky data at pH extremes indicate the presence of a second donor or surface state in the 8.3 at% Ti-doped film, with an energy level ≈ 0.7 eV below the Fermi level. Mott-Schottky plots indicate pH and Ti concentration dependent flatband potentials of -0.4 to -1.1 V vs. Ag/AgCl, commensurate with previously reported data. Flatband potentials exhibited super-Nernstian pH dependence ranging from -69.1 to -101.0 mV/pH. Carrier concentration data indicate that the Fermi energy of the Ti-doped system is Ti concentration dependent, with a minimum of 0.15 eV near 10 at% Ti. These energy level data allow us to construct an energy band diagram for Ti-doped hematite electrode/electrolyte interfaces, and to determine a Ti-doping concentration t

  14. Importance of Depletion Width on Charge Transport and Interfacial Recombination in Extremely Thin Absorber Solar Cells

    NASA Astrophysics Data System (ADS)

    Edley, Michael; Jones, Treavor; Baxter, Jason

    The dynamics of charge carrier transport and recombination and their dependence on physical and electrochemical length scales in extremely thin absorber (ETA) solar cells is vital to cell design. We used J-V characterization, transient photocurrent / photovoltage, and electrochemical impedance spectroscopy to study electron transport and interfacial recombination in ETA cell. ETA cells were composed of ZnO nanowires coated with an ultrathin (5 nm) CdS buffer layer and CdSe absorbers with thicknesses of 10 - 40 nm, with polysulfide electrolyte. In thinner absorbers near short circuit, the depletion region can extend radially into the nanowire, inhibiting interfacial recombination rate. However, depleting the periphery of the nanowire reduces the cross sectional area for charge transport, resulting in longer characteristic collection times. Thicker absorbers suffered more significant bias-dependent collection, and we conclude that slight radial penetration of the depletion region into the nanowires enhances charge collection. This work highlights the importance of considering the impact of depletion width on charge transport and interfacial recombination in the design of liquid junction, semiconductor-sensitized solar cells.

  15. 77 FR 53779 - Reports by Air Carriers on Incidents Involving Animals During Air Transport

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-04

    ... published in the Federal Register on June 29, 2012. See 77 FR 38747. The Department of Transportation is... Register published on April 11, 2000 (65 FR 19477-78), or you may visit http://DocketsInfo.dot.gov . Docket...; ] DEPARTMENT OF TRANSPORTATION Office of the Secretary 14 CFR Part 235 RIN 2105-AE07 Reports by Air Carriers...

  16. 14 CFR 234.13 - Reports by air carriers on incidents involving animals during air transport.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false Reports by air carriers on incidents involving animals during air transport. 234.13 Section 234.13 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) ECONOMIC REGULATIONS AIRLINE SERVICE QUALITY PERFORMANCE REPORTS § 234.13 Reports by...

  17. Carrier transport and trapping in a-Si:H films under plasma processing

    NASA Astrophysics Data System (ADS)

    Nunomura, Shota; Sakata, Isao; Matsubara, Koji

    2015-09-01

    Carrier transport is an important factor that determines the performances of solar cells and transistors. It is often limited by carrier trapping, associated with various defects. The defects are created during fabrication processes using various plasmas; however the defect creation kinetics is not known. Here, we demonstrate the detection of the trapped carriers in a-Si:H films under plasma enhanced CVD, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers in an a-Si:H films during growth by plasma enhanced CVD. An a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The photocurrent induced by the pump was measured throughout the growth and postgrowth annealing. An increment in the photocurrent induced by the pulsed probe was also measured. The trapped carrier density was determined from the increment since it originates from de-trapping of carriers. We found that the trapped carrier density was typically 1018cm-3. It was dependent on the growth temperature, and minimized at 473K. Interestingly, the detected trapped carriers were distributed uniformly in the direction of growth, and they were reduced during postgrowth annealing.

  18. Corona charged polychlorotrifluorotylene film electrets, and its charge storage and transport

    NASA Astrophysics Data System (ADS)

    Xia, Zhong F.; Jiang, Jian

    1991-11-01

    In this paper, the electret properties of negative and positive charging at room and elevated temperatures for polychlorotrifluorothylene (Aclar PCTFE) were studied by means of corona charging, electron beam bombardment, and thermally stimulated discharge (TSD). The shift of mean charge depth with the prolongation of time during aging at 150 degree(s)C after corona charging at RT was investigated. The transport model of detrapped charge in an Aclar PCTFE sample was discussed by means of laser induced pressure pulse (LIPP) method. The geometric distribution of traps with different activation energies along thickness was studied by means of electron beam discharge and TSD currents in combination with heat pulse method. At the same time, the comparison of the charge storage ability between positive and negative corona charged sample was carried out.

  19. Polaron effects and electric field dependence of the charge carrier mobility in conjugated polymers

    NASA Astrophysics Data System (ADS)

    Jakobsson, Mattias; Stafström, Sven

    2011-10-01

    Charge transport in conjugated polymers has been investigated using Monte Carlo simulations implemented on top of the Marcus theory for donor-acceptor transition rates. In particular, polaron effects and the dependency of the mobility on the temperature and the applied electric field have been studied. The conclusions are that while the qualitative temperature dependence is similar to that predicted by Miller-Abrahams theory in the Gaussian disorder model (GDM), the electric field dependence is characterized by a crossover into the Marcus inverted region, not present in the GDM. Furthermore, available analytical approximations to describe the electric field dependence of the mobility in Marcus theory fail to fit the simulation data and hence cannot be used to directly draw conclusions about the importance of polaron effects for charge transport in conjugated polymers.

  20. Disordered polaron transport: a theoretical description of the motion of photoinjected charges in molecularly doped polymers

    NASA Astrophysics Data System (ADS)

    Dunlap, D. H.; Kenkre, V. M.

    1993-12-01

    We present a model for the description of the temperature and concentration dependence of the mobility of photoinjected charge carriers in molecularly doped polymers on the basis of polaron transport in disordered media. We develop an existing variable range hopping technique to incorporate excluded volume effects which can be of importance in molecularly doped polymers, use the technique in conjunction with a Gaussian distribution of site energies in the polymeric solid, apply the formalism to calculate the mobility and address recent observations on hole motion in TPD and TTA in polycarbonate matrices. We show that the competition between spatial and energetic disorder can provide a reasonable mechanism for the observed concentration dependence of the activation energy for charge transport. Our theory thus provides an alternative to a recently proposed explanation based on an adiabatic-diabatic polaron transition.

  1. Charge-Retraction Time-of-Flight Measurement for Organic Charge Transport Materials

    SciTech Connect

    Wallace, J.U.; Young, R.H.; Tang, C.W.; Chen, S.H.

    2007-10-22

    This describes an all-electrical technique, charge-retraction time-of-flight (CR-TOF), to measure charge carrier mobility through an organic layer. Carriers are injected and accumulated at a blocking interface, then retracted. The retraction current transient is nearly indistinguishable from a traditional time-of-flight photocurrent. The CR-TOF technique is validated by measurement of the hole mobility of two well-known compounds, 4,4',4"-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine and 4,4'-bis[N-1-napthyl)-N-phenylamino]biphenyl, utilizing 1,3,5-tris(N-phenylbenzimidazol-2-yl)-benzene as a hole-blocking layer.

  2. First-principles Study on the Charge Transport Mechanism of Lithium Sulfide (Li2 S) in Lithium-Sulfur Batteries.

    PubMed

    Kim, B S Do-Hoon; Lee, M S Byungju; Park, Kyu-Young; Kang, Kisuk

    2016-04-20

    The lithium-sulfur chemistry is regarded as a promising candidate for next-generation battery systems because of its high specific energy (1675 mA h g(-1) ). Although issues such as low cycle stability and power capability of the system remain to be addressed, extensive research has been performed experimentally to resolve these problems. Attaining a fundamental understanding of the reaction mechanism and its reaction product would further spur the development of lithium-sulfur batteries. Here, we investigated the charge transport mechanism of lithium sulfide (Li2 S), a discharge product of conventional lithium-sulfur batteries using first-principles calculations. Our calculations indicate that the major charge transport is governed by the lithium-ion vacancies among various possible charge carriers. Furthermore, the large bandgap and low concentration of electron polarons indicate that the electronic conduction negligibly contributes to the charge transport mechanism in Li2 S. PMID:26928985

  3. Elastic tunneling charge transport mechanisms in silicon quantum dots /SiO{sub 2} thin films and superlattices

    SciTech Connect

    Illera, S. Prades, J. D.; Cirera, A.

    2015-05-07

    The role of different charge transport mechanisms in Si/SiO{sub 2} structures has been studied. A theoretical model based on the Transfer Hamiltonian Formalism has been developed to explain experimental current trends in terms of three different elastic tunneling processes: (1) trap assisted tunneling; (2) transport through an intermediate quantum dot; and (3) direct tunneling between leads. In general, at low fields carrier transport is dominated by the quantum dots whereas, for moderate and high fields, transport through deep traps inherent to the SiO{sub 2} is the most relevant process. Besides, current trends in Si/SiO{sub 2} superlattice structure have been properly reproduced.

  4. Ion and water transport in charge-modified graphene nanopores

    NASA Astrophysics Data System (ADS)

    Qiu, Ying-Hua; Li, Kun; Chen, Wei-Yu; Si, Wei; Tan, Qi-Yan; Chen, Yun-Fei

    2015-10-01

    Porous graphene has a high mechanical strength and an atomic-layer thickness that makes it a promising material for material separation and biomolecule sensing. Electrostatic interactions between charges in aqueous solutions are a type of strong long-range interaction that may greatly influence fluid transport through nanopores. In this study, molecular dynamic simulations were conducted to investigate ion and water transport through 1.05-nm diameter monolayer graphene nanopores, with their edges charge-modified. Our results indicated that these nanopores are selective to counterions when they are charged. As the charge amount increases, the total ionic currents show an increase-decrease profile while the co-ion currents monotonically decrease. The co-ion rejection can reach 76.5% and 90.2% when the nanopores are negatively and positively charged, respectively. The Cl- ion current increases and reaches a plateau, and the Na+ current decreases as the charge amount increases in systems in which Na+ ions act as counterions. In addition, charge modification can enhance water transport through nanopores. This is mainly due to the ion selectivity of the nanopores. Notably, positive charges on the pore edges facilitate water transport much more strongly than negative charges. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB707601 and 2011CB707605), the National Natural Science Foundation of China (Grant No. 50925519), the Fundamental Research Funds for the Central Universities, Funding of Jiangsu Provincial Innovation Program for Graduate Education, China (Grant No. CXZZ13_0087), and the Scientific Research Foundation of Graduate School of Southeast University (Grant No. YBJJ 1322).

  5. Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field

    SciTech Connect

    Dadamirzayev, M. G.

    2011-03-15

    The emf U{sub oc} of hot charge carriers generated in an asymmetrical p-n junction in a microwave electromagnetic field is determined by hot holes despite the fact that the temperature of electrons is much higher than that of holes. It is established that the open-circuit voltage depends on the temperature of the carriers, which determine the total current through p-n junction.

  6. Modeling charge transport in swept charge devices for x-ray spectroscopy

    NASA Astrophysics Data System (ADS)

    Athiray, P. S.; Narendranath, S.; Sreekumar, P.; Gow, J.; Radhakrishna, V.; Babu, B. R. S.

    2012-07-01

    We present the formulation of an analytical model which simulates charge transport in Swept Charge Devices (SCDs) to understand the nature of the spectral redistribution function (SRF). We attempt to construct the energy-dependent and position dependent SRF by modeling the photon interaction, charge cloud generation and various loss mechanisms viz., recombination, partial charge collection and split events. The model will help in optimizing event selection, maximize event recovery and improve spectral modeling for Chandrayaan-2 (slated for launch in 2014). A proto-type physical model is developed and the algorithm along with its results are discussed in this paper.

  7. Negative differential resistance and carrier transport of electrically bistable devices based on poly(N-vinylcarbazole)-silver sulfide composites

    PubMed Central

    2014-01-01

    An electrically bistable device has been fabricated based on poly(N-vinylcarbazole) (PVK)-silver sulfide (Ag2S) composite films using a simple spin-coating method. Current–voltage (I-V) characteristics of the as-fabricated devices exhibit a typical electrical bistability and negative differential resistance (NDR) effect. The NDR effect can be tuned by varying the positive charging voltage and the charging time. The maximum current ratio between the high-conducting state (ON state) and low-conducting state (OFF state) can reach up to 104. The carrier transport mechanisms in the OFF and ON states are described by using different models on the basis of the experimental result. PMID:24641989

  8. Effect of Cooling Rate on Microstructure and Charge Transport in Semiconducting Polymer Thin Films

    NASA Astrophysics Data System (ADS)

    Kang, Evan; Kim, Eunseong; CenterSupersolid; Quantum Matter Research Team

    2011-03-01

    Thermal annealing of polymer thin films often enhances charge carrier mobility which can be attributed to self-healing of the film morphology. We have investigated the effect of cooling rate following the annealing treatment on the thin film microstructure and the charge transport properties using a high performance semiconducting polymer, poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). The cooling rate plays a key role in determining the microstructure and performance of polymer thin films. Differential scanning calorimeter measurement shows that fast cooling suppresses the crystallization process. The microstructure of thin films is investigated by using 2D X-ray diffraction and atomic force microscopy. Slow cooling results in well-connected large domains with enhanced three dimensional ordering whereas fast cooling leads to misalignment of small domains with relatively rough surface. Transport characteristics at various temperatures show increase in the charge carrier mobility and decrease in the activation energy when the cooling rate is slowed. This change in the mobility and activation energy becomes saturated with cooling rate below 15 °C/min. E. S. H. K. and E. K. gratefully acknowledge financial support from the National Research Foundation of Korea through the Creative Research Initiatives (CSQR).

  9. Charge Transport Properties in Polymer Brushes

    NASA Astrophysics Data System (ADS)

    Moog, Mark; Tsui, Frank; Vonwald, Ian; You, Wei

    Electrical transport properties in poly(3-methyl)thiophene (P3MT) brushes have been studied. The P3MT brushes correspond to a new type of surface-tethered, vertically oriented conjugated molecular wires, sandwiched between two metallic electrodes to form the electrode-molecule-electrode (EME) devices. P3MT is a highly conjugated polymer, a ''workhorse'' material for organic electronics and photonics. The P3MT brushes were grown on ITO surfaces with controlled length (between 2 and 100 nm). The top electrodes were transfer-printed Au films with lateral dimensions between 200 nm and 50 μm. I-V and differential conductance measurements were performed using conductive AFM and 4-terminal techniques. Tunneling and field-emission measurements in EME devices with molecular lengths < 5 nm show HOMO mediated direct hole tunneling with energy barriers of 0.3 and 0.5 eV at the respective interfaces with ITO and Au. The transport properties in longer brushes are indicative of the two quasi-Ohmic interfaces with a characteristic offset in the conductance minimum of 0.12 V biased toward the ITO. Temperature dependent parameters have been examined at various molecular lengths. The drift mobility and the interplay between intra- and intermolecular transport have been investigated.

  10. Measurement of carrier transport and recombination parameter in heavily doped silicon

    NASA Technical Reports Server (NTRS)

    Swanson, Richard M.

    1986-01-01

    The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.

  11. Effect of charge carrier trapping on germanium coaxial detector line shapes

    NASA Astrophysics Data System (ADS)

    Raudorf, Thomas W.; Pehl, Richard H.

    1987-04-01

    A theoretical method to predict and quantify the effects of charge carrier trapping on germanium coaxial detector line shapes has been developed. This model was used to calculate line shapes which closely matched the measured line shapes of both conventional and reverse electrode high-purity germanium coaxial detectors that had suffered fast neutron damage. In accordance with experimentally established behavior, the theory predicts that reverse electrode detectors are vastly more resistent to the effects of neutron damage than conventional electrode detectors. The theory also predicts that the energy resolution and line shape of neutron-damaged conventional electrode detectors are far more dependent on detector diameter than are detectors of the reverse electrode configuration. The generally observed variation of the energy resolution and line shape as a function of bias voltage is shown to arise from an E -1 dependence of the trap cross section on electric field.

  12. Internal transmission coefficient in charges carrier generation layer of graphene/Si based solar cell device

    NASA Astrophysics Data System (ADS)

    Rosikhin, Ahmad; Winata, Toto

    2016-04-01

    Internal transmission profile in charges carrier generation layer of graphene/Si based solar cell has been explored theoretically. Photovoltaic device was constructed from graphene/Si heterojunction forming a multilayer stuck with Si as generation layer. The graphene/Si sheet was layered on ITO/glass wafer then coated by Al forming Ohmic contact with Si. Photon incident propagate from glass substrate to metal electrode and assumed that there is no transmission in Al layer. The wavelength range spectra used in this calculation was 200 - 1000 nm. It found that transmission intensity in the generation layer show non-linear behavior and partitioned by few areas which related with excitation process. According to this information, it may to optimize the photons absorption to create more excitation process by inserting appropriate material to enhance optical properties in certain wavelength spectra because of the exciton generation is strongly influenced by photon absorption.

  13. Carrier transport property of truxene discotic liquid crystals with three different ring substituents

    NASA Astrophysics Data System (ADS)

    Monobe, Hirosato; Ni, Hai-Liang; Hu, Ping; Wang, Bi-Qin; Zhao, Ke-Qing; Shimizu, Yo

    2016-03-01

    In this study, the charge carrier transport property of 3,8,13-trioctyloxytruxene [Trx(OC8)3] and its analogues, to which two different ring substituents of hydroxyl [Trx(OH)3(OC8)3] and methoxy [Trx(OMe)3(OC8)3] groups are introduced, has been studied relative to mesomorphism. Three analogues exhibit a hexagonal columnar (Colh) mesophase and their thermal stability increases with the introduction of hydroxyl and methoxy groups. The drift mobility measurements of Trx(OC8)3 and Trx(OH)3(OC8)3 reveal that the drift mobility is on the order of 5 × 10‑2 cm2 V‑1 s‑1 in the Colh phase and it increases to 10‑1 cm2 V‑1 s‑1 at the Colh-metastable phase transition, although Trx(OMe)3(OC8)3 shows a drift mobility of 1 × 10‑2 cm2 V‑1 s‑1 in the Colh phase with temperature dependence. These results indicate that truxene with three alkoxy chains is an interesting molecular core for mesophase semiconductors.

  14. Quantifying charge carrier concentration in ZnO thin films by Scanning Kelvin Probe Microscopy

    PubMed Central

    Maragliano, C.; Lilliu, S.; Dahlem, M. S.; Chiesa, M.; Souier, T.; Stefancich, M.

    2014-01-01

    In the last years there has been a renewed interest for zinc oxide semiconductor, mainly triggered by its prospects in optoelectronic applications. In particular, zinc oxide thin films are being widely used for photovoltaic applications, in which the determination of the electrical conductivity is of great importance. Being an intrinsically doped material, the quantification of its doping concentration has always been challenging. Here we show how to probe the charge carrier density of zinc oxide thin films by Scanning Kelvin Probe Microscopy, a technique that allows measuring the contact potential difference between the tip and the sample surface with high spatial resolution. A simple electronic energy model is used for correlating the contact potential difference with the doping concentration in the material. Limitations of this technique are discussed in details and some experimental solutions are proposed. Two-dimensional doping concentration images acquired on radio frequency-sputtered intrinsic zinc oxide thin films with different thickness and deposited under different conditions are reported. We show that results inferred with this technique are in accordance with carrier concentration expected for zinc oxide thin films deposited under different conditions and obtained from resistivity and mobility measurements. PMID:24569599

  15. Effect of surface charge of immortalized mouse cerebral endothelial cell monolayer on transport of charged solutes.

    PubMed

    Yuan, Wei; Li, Guanglei; Gil, Eun Seok; Lowe, Tao Lu; Fu, Bingmei M

    2010-04-01

    Charge carried by the surface glycocalyx layer (SGL) of the cerebral endothelium has been shown to significantly modulate the permeability of the blood-brain barrier (BBB) to charged solutes in vivo. The cultured monolayer of bEnd3, an immortalized mouse cerebral endothelial cell line, is becoming a popular in vitro BBB model due to its easy growth and maintenance of many BBB characteristics over repeated passages. To test whether the SGL of bEnd3 monolayer carries similar charge as that in the intact BBB and quantify this charge, which can be characterized by the SGL thickness (L(f)) and charge density (C(mf)), we measured the solute permeability of bEnd3 monolayer to neutral solutes and to solutes with similar size but opposite charges: negatively charged alpha-lactalbumin (-11) and positively charged ribonuclease (+3). Combining the measured permeability data with a transport model across the cell monolayer, we predicted the L(f) and the C(mf) of bEnd3 monolayer, which is approximately 160 nm and approximately 25 mEq/L, respectively. We also investigated whether orosomucoid, a plasma glycoprotein modulating the charge of the intact BBB, alters the charge of bEnd3 monolayer. We found that 1 mg/mL orosomucoid would increase SGL charge density of bEnd3 monolayer to approximately 2-fold of its control value. PMID:20087768

  16. Temperature dependence of charge carrier mobility in single-crystal chemical vapour deposition diamond

    NASA Astrophysics Data System (ADS)

    Jansen, Hendrik; Dobos, Daniel; Eisel, Thomas; Pernegger, Heinz; Eremin, Vladimir; Wermes, Norbert

    2013-05-01

    Measurements of the temperature dependence of the charge carrier mobility in single-crystal chemical vapour deposition diamond using the transient current technique are presented in a temperature range from 2 K to room temperature. An α-source is used to create free charge carriers in the diamond bulk. The evolution of the current signal induced by their drift under the influence of an externally applied field is studied as a function of the temperature and the electric field strength. The electric field strength is varied by a factor of 30. The measurements are used to extract the transit time, the drift velocity, the saturation velocity, and the low-field mobility in terms of which the results are interpreted. Three samples have been studied which show the same behaviour. For holes, the mobility increases with decreasing temperature due to the acoustic phonon scattering, but it saturates for ultra-cold temperatures. The low-field mobility for holes at room temperature is measured as μ0h(295K)=(2534±20) cm2/Vs saturating against μ0h(→2K)=(11130±120) cm2/Vs. For electrons, only a lower limit on the low-field mobility can be given. It is measured as μ¯0e(295K)=(1802±14) cm2/Vs saturating against μ¯0e(→2K)=(3058±27) cm2/Vs. The electron transit time at low fields shows a different behaviour than the hole transit time and is not following the expected behaviour. This is likely to be caused by a high temperature valley re-population effect.

  17. Doped GaN nanowires on diamond: Structural properties and charge carrier distribution

    SciTech Connect

    Schuster, Fabian Winnerl, Andrea; Weiszer, Saskia; Hetzl, Martin; Garrido, Jose A.; Stutzmann, Martin

    2015-01-28

    In this work, we present a detailed study on GaN nanowire doping, which is vital for device fabrication. The nanowires (NWs) are grown by means of molecular beam epitaxy on diamond (111) substrates. Dopant atoms are found to facilitate nucleation, thus an increasing NW density is observed for increasing dopant fluxes. While maintaining nanowire morphology, we demonstrate the incorporation of Si and Mg up to concentrations of 9× 10{sup 20}cm{sup −3} and 1 × 10{sup 20}cm{sup −3}, respectively. The dopant concentration in the nanowire cores is determined by the thermodynamic solubility limit, whereas excess dopants are found to segregate to the nanowire surface. The strain state of the NWs is investigated by X-ray diffraction, which confirms a negligible strain compared to planar thin films. Doping-related emissions are identified in low-temperature photoluminescence spectroscopy and the temperature quenching yields ionization energies of Si donors and Mg acceptors of 17 meV and 167 meV, respectively. At room temperature, luminescence and absorption spectra are found to coincide and the sub-band gap absorption is suppressed in n-type NWs. The charge carrier distribution in doped GaN nanowires is simulated under consideration of surface states at the non-polar side facets. For doping concentrations below 10{sup 17}cm{sup −3}, the nanowires are depleted of charge carriers, whereas they become highly conductive above 10{sup 19}cm{sup −3}.

  18. Charge transport study of high mobility polymer thin-film transistors based on thiophene substituted diketopyrrolopyrrole copolymers.

    PubMed

    Ha, Tae-Jun; Sonar, Prashant; Dodabalapur, Ananth

    2013-06-28

    In this paper, we report on the device physics and charge transport characteristics of high-mobility dual-gated polymer thin-film transistors with active semiconductor layers consisting of thiophene flanked DPP with thienylene-vinylene-thienylene (PDPP-TVT) alternating copolymers. Room temperature mobilities in these devices are high and can exceed 2 cm(2) V(-1) s(-1). Steady-state and non-quasi-static measurements have been performed to extract key transport parameters and velocity distributions of charge carriers in this copolymer. Charge transport in this polymer semiconductor can be explained using a Multiple-Trap-and-Release or Monroe-type model. We also compare the activation energy vs. field-effect mobility in a few important polymer semiconductors to gain a better understanding of transport of DPP systems and make appropriate comparisons. PMID:23673383

  19. Ionic charge transport between blockages: Sodium cation conduction in freshly excised bulk brain tissue

    NASA Astrophysics Data System (ADS)

    Emin, David; Akhtari, Massoud; Ellingson, B. M.; Mathern, G. W.

    2015-08-01

    We analyze the transient-dc and frequency-dependent electrical conductivities between blocking electrodes. We extend this analysis to measurements of ions' transport in freshly excised bulk samples of human brain tissue whose complex cellular structure produces blockages. The associated ionic charge-carrier density and diffusivity are consistent with local values for sodium cations determined non-invasively in brain tissue by MRI (NMR) and diffusion-MRI (spin-echo NMR). The characteristic separation between blockages, about 450 microns, is very much shorter than that found for sodium-doped gel proxies for brain tissue, >1 cm.

  20. Carrier transport simulation in a model liquid crystalline system with the biaxial Gay-Berne potential

    NASA Astrophysics Data System (ADS)

    Goto, Masanao; Takezoe, Hideo; Ishikawa, Ken

    2010-02-01

    In this paper, we performed carrier transport simulation to understand the unusual temperature dependence of the carrier mobility observed in nematic liquid crystals. For this purpose, we made a model liquid crystalline system consisting of biaxial Gay-Berne particles, and then we simulated hopping transport between these particles. The hopping rate was formulated suitably for the biaxial Gay-Berne particles based on the investigation of the electronic overlaps between actual aromatic molecules. The carrier transport simulation was performed by master equation method on the model system prepared by N-P-T ensemble Monte Carlo simulation. We reproduced gradual mobility increase in the nematic phase as a result of the change in the short range molecular order.

  1. 41 CFR 302-10.402 - What costs must we pay a commercial carrier for transporting a mobile home?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... commercial carrier for transporting a mobile home? 302-10.402 Section 302-10.402 Public Contracts and... PROPERTY 10-ALLOWANCES FOR TRANSPORTATION OF MOBILE HOMES AND BOATS USED AS A PRIMARY RESIDENCE Agency Responsibilities § 302-10.402 What costs must we pay a commercial carrier for transporting a mobile home? The...

  2. 41 CFR 302-10.402 - What costs must we pay a commercial carrier for transporting a mobile home?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... commercial carrier for transporting a mobile home? 302-10.402 Section 302-10.402 Public Contracts and... PROPERTY 10-ALLOWANCES FOR TRANSPORTATION OF MOBILE HOMES AND BOATS USED AS A PRIMARY RESIDENCE Agency Responsibilities § 302-10.402 What costs must we pay a commercial carrier for transporting a mobile home? The...

  3. Transmembrane auxin carrier systems--dynamic regulators of polar auxin transport.

    PubMed

    Morris, D A

    2000-11-01

    Recent investigations of the biochemistry, physiology and molecular genetics of polar auxin transport have greatly advanced our understanding of the process and of the part it plays in the regulation of development and in the responses of cells, tissues and organs to internal and external stimuli. The molecular and physiological characterization of mutants which exhibit lesions in polar auxin transport has led to the isolation and sequencing of genes which encode putative components of auxin carrier systems, or proteins which directly or indirectly regulate these systems. This work has revealed that specific auxin uptake and efflux carriers are coded not by single genes, but by whole families of genes, the expression of which is tissue or stimulus specific. Furthermore, evidence is accumulating rapidly that at least the auxin efflux carrier is a multi-component system consisting of both catalytic and regulatory subunits, including a separate phytotropin-binding protein. Other genes have been tentatively identified which code proteins that regulate the expression of genes coding auxin carrier components, or which regulate the intracellular traffic or activity of auxin carriers. Investigations of the turn-over and Golgi-mediated trafficking of auxin carrier proteins have revealed that essential components of at least the efflux carrier have a very short half-life in the plasma membrane and are replaced without the need for concurrent protein synthesis, leading to speculation that they might cycle between internal stores and the plasma membrane. The way is now clear for the development of specific molecular probes with which to investigate the intracellular transport and targeting of auxin carrier proteins. PMID:11758564

  4. Tuning optoelectronic properties and understanding charge transport in nanocrystal thin films of earth abundant semiconducting materials

    NASA Astrophysics Data System (ADS)

    Riha, Shannon C.

    2011-12-01

    With the capability of producing nearly 600 TW annually, solar power is one renewable energy source with the potential to meet a large fraction of the world's burgeoning energy demand. To make solar technology cost-competitive with carbon-based fuels, cheaper devices need to be realized. Solution-processed solar cells from nanocrystal inks of earth abundant materials satisfy this requirement. Nonetheless, a major hurdle in commercializing such devices is poor charge transport through nanocrystal thin films. The efficiency of charge transport through nanocrystal thin films is strongly dependent on the quality of the nanocrystals, as well as their optoelectronic properties. Therefore, the first part of this dissertation is focused on synthesizing high quality nanocrystals of Cu2ZnSnS4, a promising earth abundant photovoltaic absorber material. The optoelectronic properties of the nanocrystals were tuned by altering the copper to zinc ratio, as well as by introducing selenium to create Cu2ZnSn(S1-xSe x)4 solid solutions. Photoelectrochemical characterization was used to test the Cu2ZnSnS4 and Cu2ZnSn(S 1-xSex)4 nanocrystal thin films. The results identify minority carrier diffusion and recombination via the redox shuttle as the major loss mechanisms hindering efficient charge transport through the nanocrystal thin films. One way to solve this issue is to sinter the nanocrystals together, creating large grains for efficient charge transport. Although this may be quick and effective, it can lead to the formation of structural defects, among other issues. To this end, using a different copper-based material, namely Cu2Se, and simple surface chemistry treatments, an alternative route to enhance charge transport through nanocrystals thin films is proposed.

  5. Detecting monopole charge in Weyl semimetals via quantum interference transport

    NASA Astrophysics Data System (ADS)

    Dai, Xin; Lu, Hai-Zhou; Shen, Shun-Qing; Yao, Hong

    2016-04-01

    Topological Weyl semimetals can host Weyl nodes with monopole charges in momentum space. How to detect the signature of the monopole charges in quantum transport remains a challenging topic. Here, we reveal the connection between the parity of monopole charge in topological semimetals and the quantum interference corrections to the conductivity. We show that the parity of monopole charge determines the sign of the quantum interference correction, with odd and even parity yielding the weak antilocalization and weak localization effects, respectively. This is attributed to the Berry phase difference between time-reversed trajectories circulating the Fermi sphere that encloses the monopole charges. From standard Feynman diagram calculations, we further show that the weak-field magnetoconductivity at low temperatures is proportional to +√{B } in double-Weyl semimetals and -√{B } in single-Weyl semimetals, respectively, which could be verified experimentally.

  6. Charge Transport Behavior in Microfluidic Microbial Energy Conversion Devices

    NASA Astrophysics Data System (ADS)

    Kumar, Aloke; Mukherjee, Partha; Borole, Abhijeet; Doktycz, Mitchel

    2010-11-01

    Microbial energy harvesting devices utilize anode-respiring bacteria (ARB), present as a biofilm matrix, to generate electrical current from organic matter. The conductive biofilm matrix in the anode compartment plays a key role in the overall charge transport behavior. Especially, biofilm kinetics and ARB community dynamics are of paramount importance influencing the anode overpotential, which is further dependent on the pH variation. In this work, we present a theoretical framework to study the charge transport characteristics with concomitant biofilm kinetics, substrate utilization, diffusion and migration in a microfluidic device with microbial energy generation.

  7. A Simple Index for Characterizing Charge Transport in Molecular Materials.

    PubMed

    Jackson, Nicholas E; Savoie, Brett M; Chen, Lin X; Ratner, Mark A

    2015-03-19

    While advances in quantum chemistry have rendered the accurate prediction of band alignment relatively straightforward, the ability to forecast a noncrystalline, multimolecule system's conductivity possesses no simple computational form. Adapting the theory of classical resistor networks, we develop an index for quantifying charge transport in bulk molecular materials, without the requirement of crystallinity. The basic behavior of this index is illustrated through its application to simple lattices and clusters of common organic photovoltaic molecules, where it is shown to reproduce experimentally known performances for these materials. This development provides a quantitative computational means for determining a priori the bulk charge transport properties of molecular materials. PMID:26262862

  8. Origin of traps and charge transport mechanism in hafnia

    SciTech Connect

    Islamov, D. R. Gritsenko, V. A.; Cheng, C. H.; Chin, A.

    2014-12-01

    In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO{sub 2}. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25 eV in HfO{sub 2} was determined based on the charge transport experiments.

  9. Theoretical Study on Charge Transport Properties of Intra- and Extra-Ring Substituted Pentacene Derivatives.

    PubMed

    Fan, Jian-Xun; Chen, Xian-Kai; Zhang, Shou-Feng; Ren, Ai-Min

    2016-04-21

    A series of pentacene derivatives, halogen-substituted and thiophene- and pyridine-substituted, have been studied with a focus on the electronic properties and charge transport properties using density functional theory and classical Marcus charge-transfer theory. The transport properties of holes and electrons have been studied to get insight into the effect of halogenation and heteroatom substitution on transport and injection of charge carriers. The calculation results revealed that fluorination and chlorination can effectively lower the lowest unoccupied molecular orbital (LUMO) level, modulate the hole and electron reorganization energy, improve the stacking mode of the crystal structure, and enhance the ambipolar characteristic. Chlorination gives a better ambipolar characteristic. On the basis of halogen substitution, the substitution of terminal benzene ring of triisopropyl-silylethynyl-pentacene (TIPS-PEN) by a thiophene or pyridine will greatly lower the LUMO level and improve the stacking mode, leading to more suitable ambipolar materials. Hence, both intra- and extra-ring substitution are favorable to enhance the ambipolar transport property of TIPS-PEN. PMID:27027319

  10. Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 Ohm-cm silicon solar cells

    NASA Technical Reports Server (NTRS)

    Godlewski, M. P.; Brandhorst, H. W., Jr.; Lindholm, F. A.; Sah, C. T.

    1976-01-01

    The observed low open-circuit voltage in 0.1 Ohm-cm solar cells is probably related to an excessively high diode saturation current. Theoretical studies conducted by Lindholm et al. (1975) and by Godlewski et al. (1975) have shown that a high saturation current could be produced by either high recombination rates or bandgap narrowing effects. A description is given of an investigation which shows that bandgap narrowing effects have a first order significance in determining the charge carrier transport controlling the open-circuit voltage of 0.1 Ohm-cm silicon solar cells.

  11. Long-lived charge carrier generation in ordered films of a covalent perylenediimide–diketopyrrolopyrrole–perylenediimide molecule

    DOE PAGESBeta

    Hartnett, Patrick E.; Dyar, Scott M.; Margulies, Eric A.; Shoer, Leah E.; Cook, Andrew W.; Eaton, Samuel W.; Marks, Tobin J.; Wasielewski, Michael R.

    2015-07-31

    The photophysics of a covalently linked perylenediimide–diketopyrrolopyrrole–perylenediimide acceptor–donor–acceptor molecule (PDI–DPP–PDI, 1) were investigated and found to be markedly different in solution versus in unannealed and solvent annealed films. Photoexcitation of 1 in toluene results in quantitative charge separation in τ = 3.1 ± 0.2 ps, with charge recombination in τ = 340 ± 10 ps, while in unannealed/disordered films of 1, charge separation occurs in τ < 250 fs, while charge recombination displays a multiexponential decay in ~6 ns. The absence of long-lived, charge separation in the disordered film suggests that few free charge carriers are generated. In contrast, uponmore » CH₂Cl₂ vapor annealing films of 1, grazing-incidence X-ray scattering shows that the molecules form a more ordered structure. Photoexcitation of the ordered films results in initial formation of a spin-correlated radical ion pair (electron–hole pair) as indicated by magnetic field effects on the formation of free charge carriers which live for ~4 μs. This result has significant implications for the design of organic solar cells based on covalent donor–acceptor systems and shows that long-lived, charge-separated states can be achieved by controlling intramolecular charge separation dynamics in well-ordered systems.« less

  12. Long-lived charge carrier generation in ordered films of a covalent perylenediimide–diketopyrrolopyrrole–perylenediimide molecule

    SciTech Connect

    Hartnett, Patrick E.; Dyar, Scott M.; Margulies, Eric A.; Shoer, Leah E.; Cook, Andrew W.; Eaton, Samuel W.; Marks, Tobin J.; Wasielewski, Michael R.

    2015-07-31

    The photophysics of a covalently linked perylenediimide–diketopyrrolopyrrole–perylenediimide acceptor–donor–acceptor molecule (PDI–DPP–PDI, 1) were investigated and found to be markedly different in solution versus in unannealed and solvent annealed films. Photoexcitation of 1 in toluene results in quantitative charge separation in τ = 3.1 ± 0.2 ps, with charge recombination in τ = 340 ± 10 ps, while in unannealed/disordered films of 1, charge separation occurs in τ < 250 fs, while charge recombination displays a multiexponential decay in ~6 ns. The absence of long-lived, charge separation in the disordered film suggests that few free charge carriers are generated. In contrast, upon CH₂Cl₂ vapor annealing films of 1, grazing-incidence X-ray scattering shows that the molecules form a more ordered structure. Photoexcitation of the ordered films results in initial formation of a spin-correlated radical ion pair (electron–hole pair) as indicated by magnetic field effects on the formation of free charge carriers which live for ~4 μs. This result has significant implications for the design of organic solar cells based on covalent donor–acceptor systems and shows that long-lived, charge-separated states can be achieved by controlling intramolecular charge separation dynamics in well-ordered systems.

  13. Simulation of bipolar charge transport in nanocomposite polymer films

    NASA Astrophysics Data System (ADS)

    Lean, Meng H.; Chu, Wei-Ping L.

    2015-03-01

    This paper describes 3D particle-in-cell simulation of bipolar charge injection and transport through nanocomposite film comprised of ferroelectric ceramic nanofillers in an amorphous polymer matrix. The classical electrical double layer (EDL) model for a monopolar core is extended (eEDL) to represent the nanofiller by replacing it with a dipolar core. Charge injection at the electrodes assumes metal-polymer Schottky emission at low to moderate fields and Fowler-Nordheim tunneling at high fields. Injected particles migrate via field-dependent Poole-Frenkel mobility and recombine with Monte Carlo selection. The simulation algorithm uses a boundary integral equation method for solution of the Poisson equation coupled with a second-order predictor-corrector scheme for robust time integration of the equations of motion. The stability criterion of the explicit algorithm conforms to the Courant-Friedrichs-Levy limit assuring robust and rapid convergence. The model is capable of simulating a wide dynamic range spanning leakage current to pre-breakdown. Simulation results for BaTiO3 nanofiller in amorphous polymer matrix indicate that charge transport behavior depend on nanoparticle polarization with anti-parallel orientation showing the highest leakage conduction and therefore lowest level of charge trapping in the interaction zone. Charge recombination is also highest, at the cost of reduced leakage conduction charge. The eEDL model predicts the meandering pathways of charge particle trajectories.

  14. Charge transport in disordered molecular solids

    NASA Astrophysics Data System (ADS)

    Borsenberger, P. M.; Pautmeier, L.; Bässler, H.

    1991-04-01

    Hole mobilities have been measured in vapor deposited films of 1,1-bis(di-4-tolylaminophenyl)cyclohexane (TAPC) and TAPC-doped bisphenol-A-polycarbonate (BPPC). Over an extended range of temperatures, the mobilities decrease with increasing field at low fields. At high fields, a log μ∝E1/2 relationship is observed with a slope that approaches zero at high temperatures. The results are described within the framework of the disorder transport formalism. By comparison of the experimental results with Monte Carlo simulations, we show that the observed behavior is a signature of the simultaneous presence of diagonal and off-diagonal disorder. Agreement between simulation results and experiment is excellent. Generalizing these results provides a framework for determining the magnitude of the relevant diagonal and off-diagonal disorder parameters from an analysis of mobility measurements.

  15. Charged carrier spin dynamics in ZnO quantum wells and epilayers

    NASA Astrophysics Data System (ADS)

    Kim, Jungtaek; Puls, J.; Sadofev, S.; Henneberger, F.

    2016-01-01

    Longitudinal charged carrier spin dynamics is studied for ZnO quantum wells and epilayers using the optical transition of the negatively charged exciton X- and the neutral donor bound exciton D0X , respectively. The hole spin relaxation is derived from the optical orientation of X- and D0X photoluminescence, whereas the spin relaxation of the resident electrons and donor electrons is accessed via the bleaching of the spin selective excitation process. Hole spin relaxation times of τ1s ,h of 80 and 140 ps are found for D0X and X-, respectively, which are practically independent of a magnetic field B∥ applied along the ZnO c ⃗ axis. Much longer longitudinal electron spin relaxation times in the 1 μ s range are uncovered if the hyperfine interaction is suppressed by a proper B∥. A field strength of ≈2 mT is large enough proving the extremely small value of the Overhauser field in ZnO. This is related to the very restricted number of magnetic nuclei interacting with the electron inside the volume of the exciton complex.

  16. Non-Abelian states in Fractional Quantum Hall effect in charge carrier hole systems

    NASA Astrophysics Data System (ADS)

    Simion, George; Lyanda-Geller, Yuli

    Quasiparticle excitations obeying non-Abelian statistics represent the key element of topological quantum computing. Crossing of levels and strong coupling between angular momentum and orbital motion, described by Luttinger Hamiltonian, make properties of charge carrier holes different from those of electrons. Peculiarities of hole spectrum in magnetic field provide an opportunity for controlling Landau level mixing in charge carier hole systems. In order to describe Fractional Quantum Hall effect for holes, we propose a method to map hole spectrum and wavefunctions using a spherical shell. We investigate the experimentally observed ν = 1 / 2 state in spherical geometry. Haldane pseudopotentials are computed and the effect of Landau level mixing is evaluated. Exact diagonalization of Coulomb interaction in systems with eight to fourteen holes is performed. We determine that the ground state superposition with Abelian 331 state is very small and the overlap with Moore-Read state is significant. The quasihole and quasielectron excitations are discussed. Research was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-SC0010544.

  17. Mucus permeating carriers: formulation and characterization of highly densely charged nanoparticles.

    PubMed

    Pereira de Sousa, Irene; Steiner, Corinna; Schmutzler, Matthias; Wilcox, Matthew D; Veldhuis, Gert J; Pearson, Jeffrey P; Huck, Christian W; Salvenmoser, Willi; Bernkop-Schnürch, Andreas

    2015-11-01

    The GI mucus layer represents a significant block to drug carriers absorption. Taking an example from nature, virus-mimicking nanoparticles (NPs) with highly densely charged surface were designed with the aim to improve their mucus permeation ability. NPs were formulated by combining chitosan with chondroitin sulfate and were characterized by particle size, ζ-potential and hydrophobicity. The interaction occurring between NPs and diluted porcine intestinal mucus was investigated by a new method. Furthermore, the rotating tube technique was exploited to evaluate the NPs permeation ability in fresh undiluted porcine intestinal mucus. NPs (400-500 nm) presenting a slightly positive (4.02 mV) and slightly negative (-3.55 mV) ζ-potential resulted to be hydrophobic and hydrophilic, respectively. On the one hand the hydrophobic NPs undergo physico-chemical changes when incubated with mucus, namely the size increased and the ζ-potential decreased. On the other hand, the hydrophilic NPs did not significantly change size and net charge during incubation with mucus. Both types of NPs showed a 3-fold higher diffusion ability compared to the reference 50/50 DL-lactide/glycolide copolymer NPs (136 nm, -23 mV, hydrophilic). Based on these results, this work gives valuable information for the further design of mucus-penetrating NPs. PMID:25576256

  18. A multi-agent quantum Monte Carlo model for charge transport: Application to organic field-effect transistors.

    PubMed

    Bauer, Thilo; Jäger, Christof M; Jordan, Meredith J T; Clark, Timothy

    2015-07-28

    We have developed a multi-agent quantum Monte Carlo model to describe the spatial dynamics of multiple majority charge carriers during conduction of electric current in the channel of organic field-effect transistors. The charge carriers are treated by a neglect of diatomic differential overlap Hamiltonian using a lattice of hydrogen-like basis functions. The local ionization energy and local electron affinity defined previously map the bulk structure of the transistor channel to external potentials for the simulations of electron- and hole-conduction, respectively. The model is designed without a specific charge-transport mechanism like hopping- or band-transport in mind and does not arbitrarily localize charge. An electrode model allows dynamic injection and depletion of charge carriers according to source-drain voltage. The field-effect is modeled by using the source-gate voltage in a Metropolis-like acceptance criterion. Although the current cannot be calculated because the simulations have no time axis, using the number of Monte Carlo moves as pseudo-time gives results that resemble experimental I/V curves. PMID:26233114

  19. Charge transport in porous nanocrystalline titanium dioxide

    NASA Astrophysics Data System (ADS)

    Eppler, Anuradha M.; Ballard, Ian M.; Nelson, Jenny

    2002-04-01

    The dark conductivity and photoconductivity of porous, anatase titanium dioxide films have been studied in different ambient conditions. The films are nanocrystalline with a particle size of 5- 15 nm and porosity of around 50%. Films are resistive (10 4- 10 6 Ω m ) in the dark in ambient air, and exhibit space charge limited current-voltage behaviour, modified by the presence of traps. Vacuum reduces the dark conductivity by a factor of 10 2-10 3. This effect is tentatively attributed to the removal of water, which is known to adsorb dissociatively on TiO 2 surfaces and may dope the material by proton insertion and Ti 3+ formation. The photoconductivity in vacuum is 10 6 larger than that in air at maximum photocurrent and increases with decreasing pressure. In this case the effect is attributed to the loss of surface adsorbed oxygen, a known electron scavenger, in vacuum. Removal of oxygen extends the electron lifetime and results in a much larger saturation photocurrent. In vacuum, a point of inflexion is observed in the transient rise and the shapes of the curves are intensity dependent. Both these observations are consistent with the presence of traps. No correlation was observed between the photoconductivity decays and temperature, which suggests that the decay occurs by band-to-band recombination and not thermionic emission. On the basis of these observations, a model based on competition between photogeneration, trapping and scavenging has been developed. By varying the trapping and recombination rates we can simulate the effects of air and vacuum. The intensity dependent results can be simulated by changing the generation rate alone which allows us to estimate a trap density of less than 10 20 cm-3. We propose that photoconductivity may be used as a direct probe of the electron lifetime and can serve to evaluate different chemical environments for dye sensitised solar cells, and to study photocatalytic function.

  20. The telegraph equation in charged particle transport

    NASA Technical Reports Server (NTRS)

    Gombosi, T. I.; Jokipii, J. R.; Kota, J.; Lorencz, K.; Williams, L. L.

    1993-01-01

    We present a new derivation of the telegraph equation which modifies its coefficients. First, an infinite order partial differential equation is obtained for the velocity space solid angle-averaged phase-space distribution of particles which underwent at least a few collisions. It is shown that, in the lowest order asymptotic expansion, this equation simplifies to the well-known diffusion equation. The second-order asymptotic expansion for isotropic small-angle scattering results in a modified telegraph equation with a signal propagation speed of v(5/11) exp 1/2 instead of the usual v/3 exp 1/2. Our derivation of a modified telegraph equation follows from an expansion of the Boltzmann equation in the relevant smallness parameters and not from a truncation of an eigenfunction expansion. This equation is consistent with causality. It is shown that, under steady state conditions in a convecting plasma, the telegraph equation may be regarded as a diffusion equation with a modified transport coefficient, which describes a combination of diffusion and cosmic-ray inertia.

  1. 14 CFR 221.2 - Carrier's duty.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 4 2011-01-01 2011-01-01 false Carrier's duty. 221.2 Section 221.2 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) ECONOMIC... be used. (b) Must observe tariffs. No air carrier or foreign air carrier shall charge or demand...

  2. 14 CFR 221.2 - Carrier's duty.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false Carrier's duty. 221.2 Section 221.2 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) ECONOMIC... be used. (b) Must observe tariffs. No air carrier or foreign air carrier shall charge or demand...

  3. Novel macrocyclic carriers for proton-coupled liquid membrane transport

    SciTech Connect

    Lamb, J.D.; Bradshaw, J.S.; Izatt, R.M.

    1992-07-01

    A number of new macrocyclic ligands was prepared for transport studies. The cryptands were prpepared (18-40% yield) by a new metal carbonate-catalyzed one-step method from 1 mole oligoethyleneoxy diamine and 2 moles diahlide derivative of oligoethylene glycol. Bis-crown ethers were also isolated in 17-30% yields. Cage compounds were also prepared; they interact with various metal ions and protons. Back extraction and dual module hollow fiber membrane separation experiments were used to study the cation selectivity of new ligands, including crown thioethers. An isothermal flow calorimeter is being constructed for studies of macrocycle-cation reactions. 3 figs, 2 tabs.

  4. Two-dimensional Au lattices featuring unique carrier transport preference and wide forbidden gap

    NASA Astrophysics Data System (ADS)

    Zhang, Chunmiao; Wu, Yaping; Zhou, Yinghui; Gao, Na; Guo, Fei; Chen, Xiaohang; Jiang, Baofeng; Hu, Wei; Kang, Junyong

    2014-08-01

    Large-scale 2D Au lattices with honeycomb-like structure are fabricated on Si(111)-7 × 7 surface at room temperature. The growth pattern investigated by reflection high-energy electron diffraction and in situ scanning tunneling microscopy indicates that the 2D Au lattices are composed of two interfacial distinct layers that are completely formed one after another with a close-packed structure. A unique wide forbidden gap of 4.1 eV is measured around the Fermi level of the 2D Au lattices by scanning tunneling spectroscopy. Bias-dependent STM images and theoretical simulations suggest that the in-plane quantum coupling and carrier transport behavior are responsible for the novel electronic properties. In addition to local electronic states, the electronic structures of 2D Au lattices are further modulated by the carrier transport preference that is determined by carrier energy and symmetry of 2D lattices. These findings will provide some references for the controlled fabrication and for routing the carrier transport behavior of low-dimensional metal structures.Large-scale 2D Au lattices with honeycomb-like structure are fabricated on Si(111)-7 × 7 surface at room temperature. The growth pattern investigated by reflection high-energy electron diffraction and in situ scanning tunneling microscopy indicates that the 2D Au lattices are composed of two interfacial distinct layers that are completely formed one after another with a close-packed structure. A unique wide forbidden gap of 4.1 eV is measured around the Fermi level of the 2D Au lattices by scanning tunneling spectroscopy. Bias-dependent STM images and theoretical simulations suggest that the in-plane quantum coupling and carrier transport behavior are responsible for the novel electronic properties. In addition to local electronic states, the electronic structures of 2D Au lattices are further modulated by the carrier transport preference that is determined by carrier energy and symmetry of 2D lattices. These findings will provide some references for the controlled fabrication and for routing the carrier transport behavior of low-dimensional metal structures. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr01329h

  5. On the Structure of the Fixed Charge Transportation Problem

    ERIC Educational Resources Information Center

    Kowalski, K.

    2005-01-01

    This work extends the theory of the fixed charge transportation problem (FCTP), currently based mostly on a forty-year-old publication by Hirsch and Danzig. This paper presents novel properties that need to be considered by those using existing, or those developing new methods for optimizing FCTP. It also defines the problem in an easier way,

  6. On the Structure of the Fixed Charge Transportation Problem

    ERIC Educational Resources Information Center

    Kowalski, K.

    2005-01-01

    This work extends the theory of the fixed charge transportation problem (FCTP), currently based mostly on a forty-year-old publication by Hirsch and Danzig. This paper presents novel properties that need to be considered by those using existing, or those developing new methods for optimizing FCTP. It also defines the problem in an easier way,…

  7. Physical constraints on charge transport through bacterial nanowires

    PubMed Central

    Polizzi, Nicholas F.; Skourtis, Spiros S.

    2012-01-01

    Extracellular appendages of the dissimilatory metal-reducing bacterium Shewanella oneidensis MR-1 were recently shown to sustain currents of 1010 electrons per second over distances of 0.5 microns [El-Naggar et al., Proc. Natl. Acad. Sci. U. S. A., 2010, 107, 18127]. However, the identity of the charge localizing sites and their organization along the “nanowire” remain unknown. We use theory to predict redox cofactor separation distances that would permit charge flow at rates of 1010 electrons per second over 0.5 microns for voltage biases of ≤1V, using a steady-state analysis governed by a non-adiabatic electron transport mechanism. We find the observed currents necessitate a multi-step hopping transport mechanism, with charge localizing sites separated by less than 1 nm and reorganization energies that rival the lowest known in biology. PMID:22470966

  8. Charge transport properties of bulk Ta3N5 from first principles

    NASA Astrophysics Data System (ADS)

    Morbec, Juliana M.; Galli, Giulia

    2016-01-01

    Tantalum nitride is considered a promising material for photoelectrochemical water splitting, however, its charge transport properties remain poorly understood. We investigated polaronic and band transport in Ta3N5 using first-principles calculations. We first studied the formation of small polarons using density-functional theory (DFT) including DFT +U and hybrid functionals. We found that electron small polarons may occur but hole polarons are not energetically favorable. The estimated polaronic mobility for electrons is at least three orders of magnitude smaller than that measured in Ta3N5 films, suggesting that the main transport mechanism for both electrons and holes is bandlike. Since band transport is strongly affected by the carrier effective masses, and Ta3N5 is known to have large electron and hole effective masses, we also investigated whether substitutional impurities or strain may help lower the effective masses. We found a significant reduction in both electron and hole effective masses (up to 17% for electrons and 39% for holes) under applied strain, which may lead to a substantial improvement (up to 30% for electrons and 15% for holes) in the carrier mobilities.

  9. 29 CFR 780.155 - Delivery “to carriers for transportation to market.”

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 29 Labor 3 2012-07-01 2012-07-01 false Delivery âto carriers for transportation to market.â 780.155 Section 780.155 Labor Regulations Relating to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT OF LABOR STATEMENTS OF GENERAL POLICY OR INTERPRETATION NOT DIRECTLY RELATED TO REGULATIONS EXEMPTIONS APPLICABLE TO AGRICULTURE, PROCESSING...

  10. 29 CFR 780.155 - Delivery “to carriers for transportation to market.”

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 29 Labor 3 2013-07-01 2013-07-01 false Delivery âto carriers for transportation to market.â 780.155 Section 780.155 Labor Regulations Relating to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT OF LABOR STATEMENTS OF GENERAL POLICY OR INTERPRETATION NOT DIRECTLY RELATED TO REGULATIONS EXEMPTIONS APPLICABLE TO AGRICULTURE, PROCESSING...

  11. 14 CFR 382.19 - May carriers refuse to provide transportation on the basis of disability?

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... any passenger on the basis of safety, as provided in 49 U.S.C. 44902 or 14 CFR 121.533, or to any... 14 Aeronautics and Space 4 2014-01-01 2014-01-01 false May carriers refuse to provide transportation on the basis of disability? 382.19 Section 382.19 Aeronautics and Space OFFICE OF THE...

  12. 14 CFR 382.19 - May carriers refuse to provide transportation on the basis of disability?

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... any passenger on the basis of safety, as provided in 49 U.S.C. 44902 or 14 CFR 121.533, or to any... 14 Aeronautics and Space 4 2012-01-01 2012-01-01 false May carriers refuse to provide transportation on the basis of disability? 382.19 Section 382.19 Aeronautics and Space OFFICE OF THE...

  13. 14 CFR 382.19 - May carriers refuse to provide transportation on the basis of disability?

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... any passenger on the basis of safety, as provided in 49 U.S.C. 44902 or 14 CFR 121.533, or to any... 14 Aeronautics and Space 4 2011-01-01 2011-01-01 false May carriers refuse to provide transportation on the basis of disability? 382.19 Section 382.19 Aeronautics and Space OFFICE OF THE...

  14. 14 CFR 382.19 - May carriers refuse to provide transportation on the basis of disability?

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... any passenger on the basis of safety, as provided in 49 U.S.C. 44902 or 14 CFR 121.533, or to any... 14 Aeronautics and Space 4 2013-01-01 2013-01-01 false May carriers refuse to provide transportation on the basis of disability? 382.19 Section 382.19 Aeronautics and Space OFFICE OF THE...

  15. 29 CFR 780.155 - Delivery “to carriers for transportation to market.”

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 29 Labor 3 2014-07-01 2014-07-01 false Delivery âto carriers for transportation to market.â 780.155 Section 780.155 Labor Regulations Relating to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT... FAIR LABOR STANDARDS ACT General Scope of Agriculture Specified Delivery Operations § 780.155...

  16. 29 CFR 780.155 - Delivery “to carriers for transportation to market.”

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 29 Labor 3 2011-07-01 2011-07-01 false Delivery âto carriers for transportation to market.â 780.155 Section 780.155 Labor Regulations Relating to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT... FAIR LABOR STANDARDS ACT General Scope of Agriculture Specified Delivery Operations § 780.155...

  17. 29 CFR 780.155 - Delivery “to carriers for transportation to market.”

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 29 Labor 3 2010-07-01 2010-07-01 false Delivery âto carriers for transportation to market.â 780.155 Section 780.155 Labor Regulations Relating to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT... FAIR LABOR STANDARDS ACT General Scope of Agriculture Specified Delivery Operations § 780.155...

  18. Photogenerated carriers transport behaviors in L-cysteine capped ZnSe core-shell quantum dots

    NASA Astrophysics Data System (ADS)

    Shan, Qingsong; Li, Kuiying; Xue, Zhenjie; Lin, Yingying; Yin, Hua; Zhu, Ruiping

    2016-02-01

    The photoexcited carrier transport behavior of zinc selenide (ZnSe) quantum dots (QDs) with core-shell structure is studied because of their unique photoelectronic characteristics. The surface photovoltaic (SPV) properties of self-assembled ZnSe/ZnS/L-Cys core-shell QDs were probed via electric field induced surface photovoltage and transient photovoltage (TPV) measurements supplemented by Fourier transform infrared, laser Raman, absorption, and photoluminescence spectroscopies. The ZnSe QDs displayed p-type SPV characteristics with a broader stronger SPV response over the whole ultraviolet-to-near-infrared range compared with those of other core-shell QDs in the same group. The relationship between the SPV phase value of the QDs and external bias was revealed in their SPV phase spectrum. The wide transient photovoltage response region from 3.3 × 10-8 to 2 × 10-3 s was closely related to the long diffusion distance of photoexcited free charge carriers in the interfacial space-charge region of the QDs. The strong SPV response corresponding to the ZnSe core mainly originated from an obvious quantum tunneling effect in the QDs.

  19. Charge transport and recombination in P3HT:PbS solar cells

    SciTech Connect

    Firdaus, Yuliar; Khetubol, Adis; Van der Auweraer, Mark; Vandenplas, Erwin; Cheyns, David; Gehlhaar, Robert

    2015-03-07

    The charge carrier transport in thin film hybrid solar cells is analyzed and correlated with device performance and the mechanisms responsible for recombination loss. The hybrid bulk heterojunction consisted of a blend of poly(3-hexylthiophene) (P3HT) and small size (2.4 nm) PbS quantum dots (QDs). The charge transport in the P3HT:PbS blends was determined by measuring the space-charge limited current in hole-only and electron-only devices. When the loading of PbS QDs exceeds the percolation threshold, a significant increase of the electron mobility is observed in the blend with PbS QDs. The hole mobility, on the other hand, only slightly decreased upon increasing the loading of PbS QDs. We also showed that the photocurrent is limited by the low shunt resistance rather than by space-charge effects. The significant reduction of the fill factor at high light intensity suggests that under these conditions the non-geminate recombination dominates. However, at open-circuit conditions, the trap-assisted recombination dominates over non-geminate recombination.

  20. Dielectric spectroscopy for probing the relaxation and charge transport in polypyrrole nanofibers

    NASA Astrophysics Data System (ADS)

    Banerjee, Somik; Kumar, A.

    2011-06-01

    Conductivity relaxation and charge transport mechanisms in polypyrrole (PPy) nanofibers synthesized using a micellar polymerization technique with varying surfactant concentration has been investigated by dielectric relaxation spectroscopy. TEM micrographs depict that the increasing surfactant concentration leads to the reduction of the nanofiber diameter. X-ray diffraction studies show that domain length in the PPy nanofibers decreases with decreasing fiber diameter whereas the strain caused due to dislocations and point defects increases. The permittivity spectra reveal that the relaxation mechanism in PPy nanofibers are dominated by hopping of trapped charges. Two relaxation peaks in the impedance spectra are attributed to the two-phase structure in the PPy nanofibers; the lower frequency peak is ascribed to the phase of oxidized repeat units and the higher frequency peak to the reduced repeat units of PPy nanofibers. The occurrence of relaxation peaks at different frequencies in the impedance and modulus spectra indicates a non-Debye relaxation with a wide distribution of relaxation times. The ac conductivity has been interpreted as a power law of frequency. The decrease of the parameter s with increasing temperature indicates that correlated barrier hopping is the dominant charge transport mechanism. Existence of polarons as major charge carriers has been confirmed by the low values of polaron binding energy.

  1. Porescale transport phenomena in charge-selective hemofilters

    NASA Astrophysics Data System (ADS)

    Datta, Subhra; Conlisk, Albert

    2009-11-01

    Theoretical models for hindered transport of biomolecules and electrostatic and electrokinetic phenomena in the pressure driven flow of blood simulants in structured nanoporous membranes are developed, motivated by the design requirements for a hemofilter for an implantable artificial kidney. In particular, the selectivity of charged membrane to charged biomolecules of biological interest, the inference of the pore wall surface charge density from streaming potential measurements, when electrical double layers overlap and the pore wall surface charge density is heterogeneous (e.g. due to nonuniformities in the applied surface coatings) and the coupling of intrapore phenomena with mass transfer and fluid flow upstream and downstream of the membrane are discussed. The developed theory is applied to the problem of choosing a hemofilter pore size that provides adequate retention/clearance of desirable/undesirable solutes from blood.

  2. An Efficient Scheduling Scheme on Charging Stations for Smart Transportation

    NASA Astrophysics Data System (ADS)

    Kim, Hye-Jin; Lee, Junghoon; Park, Gyung-Leen; Kang, Min-Jae; Kang, Mikyung

    This paper proposes a reservation-based scheduling scheme for the charging station to decide the service order of multiple requests, aiming at improving the satisfiability of electric vehicles. The proposed scheme makes it possible for a customer to reduce the charge cost and waiting time, while a station can extend the number of clients it can serve. A linear rank function is defined based on estimated arrival time, waiting time bound, and the amount of needed power, reducing the scheduling complexity. Receiving the requests from the clients, the power station decides the charge order by the rank function and then replies to the requesters with the waiting time and cost it can guarantee. Each requester can decide whether to charge at that station or try another station. This scheduler can evolve to integrate a new pricing policy and services, enriching the electric vehicle transport system.

  3. Effect of dielectric/organic interface properties on charge transport in organic thin film transistors

    NASA Astrophysics Data System (ADS)

    Rahimi, Ronak; Kuchibhatla, S.; Korakakis, D.

    2013-04-01

    Charge carrier transport within the organic thin films as well as charge carrier injection between organic layers and organic/inorganic materials such as metal or dielectric layers are crucial factors in determining the efficiency of organic electronic devices. These parameters rely largely on the molecular structure, morphology, and ordering of the organic thin films. Therefore, a profound understanding of the structure of organic materials as well as the properties of the interfacial layers is crucial to enhance the performance of the device. To achieve this fact, structure and morphology of PTCDI-C8 and pentacene thin films on Lithium Fluoride (LiF) have been studied using X-ray reflectivity technique. These films have been integrated into organic thin film transistors (OTFTs) to investigate their transport properties. The structural characterization revealed that the PTCDI-C8 films form an ordered structure on the LiF dielectric layer. Devices with LiF/PTCDI-C8 bilayer exhibit about one order of magnitude higher output current (Ids) at a constant drain-source voltage (Vds) compared to the devices with LiF/pentacene bilayer. The observed differences in the electrical characteristics of these devices can be attributed to the effects of the dielectric/organic interface and the molecular structure of the organic layers. The results of this study present the importance of the dielectric/organic interfaces in the performance of OTFTs.

  4. Iontophoretic transport of charged macromolecules across human sclera.

    PubMed

    Chopra, Poonam; Hao, Jinsong; Li, S Kevin

    2010-03-30

    The mechanisms of transscleral iontophoresis have been investigated previously with small molecules in rabbit sclera. The objective of the present study was to examine transscleral iontophoretic transport of charged macromolecules across excised human sclera. Passive and 2mA iontophoretic transport experiments were conducted in side-by-side diffusion cells with human sclera. The effects of iontophoresis upon transscleral transport of model permeants bovine serum albumin (BSA) and polystyrene sulfonic acid (PSS) as well as a model drug bevacizumab (BEV) were determined. Passive and iontophoretic transport experiments of tetraethylammonium (TEA) and salicylic acid (SA) and passive transport experiments of the macromolecules served as the controls. The results of iontophoresis enhanced transport of TEA and SA across human sclera were consistent with those in a previous rabbit sclera study. For the iontophoretic transport of macromolecules BSA and BEV, higher iontophoretic fluxes were observed in anodal iontophoresis as compared to passive and cathodal iontophoresis. This suggests the importance of electroosmosis. For the polyelectrolyte PSS, higher iontophoretic flux was observed in cathodal iontophoresis compared to anodal iontophoresis. Both electroosmosis and electrophoresis affected iontophoretic fluxes of the macromolecules; the relative contributions of electroosmosis and electrophoresis were a function of molecular size and charge of the macromolecules. PMID:20045044

  5. Mode-selective vibrational modulation of charge transport in organic electronic devices

    NASA Astrophysics Data System (ADS)

    Bakulin, Artem A.; Lovrincic, Robert; Yu, Xi; Selig, Oleg; Bakker, Huib J.; Rezus, Yves L. A.; Nayak, Pabitra K.; Fonari, Alexandr; Coropceanu, Veaceslav; Brédas, Jean-Luc; Cahen, David

    2015-08-01

    The soft character of organic materials leads to strong coupling between molecular, nuclear and electronic dynamics. This coupling opens the way to influence charge transport in organic electronic devices by exciting molecular vibrational motions. However, despite encouraging theoretical predictions, experimental realization of such approach has remained elusive. Here we demonstrate experimentally that photoconductivity in a model organic optoelectronic device can be modulated by the selective excitation of molecular vibrations. Using an ultrafast infrared laser source to create a coherent superposition of vibrational motions in a pentacene/C60 photoresistor, we observe that excitation of certain modes in the 1,500-1,700 cm-1 region leads to photocurrent enhancement. Excited vibrations affect predominantly trapped carriers. The effect depends on the nature of the vibration and its mode-specific character can be well described by the vibrational modulation of intermolecular electronic couplings. This presents a new tool for studying electron-phonon coupling and charge dynamics in (bio)molecular materials.

  6. Quadrimolecular recombination kinetics of photogenerated charge carriers in the composites of regioregular polythiophene derivatives and soluble fullerene

    NASA Astrophysics Data System (ADS)

    Tanaka, Hisaaki; Yokoi, Yuki; Hasegawa, Naoki; Kuroda, Shin-ichi; Iijima, Takayuki; Sato, Takao; Yamamoto, Takakazu

    2010-04-01

    Light-induced electron spin resonance (LESR) measurements have been performed on the composites of regioregular polythiophene derivatives and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) in order to study the recombination kinetics of photogenerated charge carriers. We adopt two regioregular polymers with different side chains; head-to-tail poly(3-hexylthiophene) (RR-P3HT) and head-to-head poly(3-dodecynylthiophene-2,5-diyl) [HH-P3(C≡CDec)Th]. In both systems, two LESR signals due to positive polarons on the polymer (g ˜2.002) and fullerene radical anions (g ˜2.000) have been observed. Quadrimolecular recombination (QR) kinetics, previously reported for RR-P3HT/C60 composites, where two positive polarons and two radical anions recombine simultaneously, has been confirmed in both systems by the observation of Iex0.25 dependence of the LESR intensity on the excitation light intensity (Iex) and the decay curve of the LESR intensity. This process implies the formation of doubly-charged states such as bipolarons or polaron pairs on the polymer to attract two radical anions. Temperature dependence of the QR rate constant, γ, in both systems has exhibited a crossover of the transport mechanism from low temperature tunneling to high temperature hopping process, as in the case of RR-P3HT/C60 composites. In the RR-P3HT/PCBM composites, γ has exhibited marked dependencies on the PCBM concentration or annealing, which may be related to the change of the crystallinity of the phase-separated polymer and fullerene domains as well as their interface structures, affecting the carrier mobilities or the trap states at the interface. Associated change of the molecular orientation of RR-P3HT crystalline domains with the lamellar structure has been further confirmed from the anisotropic LESR signals of the cast films on the substrates, exhibiting a qualitative agreement with the reported x-ray or optical analyses. In the HH-P3(C≡CDec)Th/PCBM composite, γ has been smaller than those in the RR-P3HT/PCBM composites, reflecting the difference of local structures due to the different molecular structure. Furthermore, the hyperfine-determined LESR linewidth of the positive polaron has exhibited a smaller value than those in the RR-P3HT composite, implying the larger extension of the polaron wave function on the polymer chain, which is consistent with the highly coplanar structure of this polymer.

  7. Ion Transport Dynamics in Acid Variable Charge Subsoils

    SciTech Connect

    Qafoku, Nik; Sumner, Malcolm E.; Toma, Mitsuru

    2005-06-06

    This is a mini-review of the research work conducted by the authors with the objective of studying ion transport in variable charge subsoils collected from different areas around the world. An attempt is made in these studies to relate the unique behavior manifested during ionic transport in these subsoils with their mineralogical, physical and chemical properties, which are markedly different from those in soils from temperate regions. The variable charge subsoils have a relatively high salt sorption capacity and anion exchange capacity (AEC) that retards anions downward movement. The AEC correlates closely with the anion retardation coefficients. Ca2+ applied with gypsum in topsoil may be transported to the subsoil and may improve the subsoil chemical properties. These results may help in developing appropriate management strategies under a range of mineralogical, physical, and chemical conditions.

  8. Electrolyte transport in neutral polymer gels embedded with charged inclusions

    NASA Astrophysics Data System (ADS)

    Hill, Reghan

    2005-11-01

    Ion permeable membranes are the basis of a variety of molecular separation technologies, including ion exchange, gel electrophoresis and dialysis. This work presents a theoretical model of electrolyte transport in membranes comprised of a continuous polymer gel embedded with charged spherical inclusions, e.g., biological cells and synthetic colloids. The microstructure mimics immobilized cell cultures, where electric fields have been used to promote nutrient transport. Because several important characteristics can, in principle, be carefully controlled, the theory provides a quantitative framework to help tailor the bulk properties for enhanced molecular transport, microfluidic pumping, and physicochemical sensing applications. This talk focuses on the electroosmotic flow driven by weak electric fields and electrolyte concentration gradients. Also of importance is the influence of charge on the effective ion diffusion coefficients, bulk electrical conductivity, and membrane diffusion potential.

  9. Charge transport and ac response under light illumination in gate-modulated DNA molecular junctions.

    PubMed

    Zhang, Yan; Zhu, Wen-Huan; Ding, Guo-Hui; Dong, Bing; Wang, Xue-Feng

    2015-05-22

    Using a two-strand tight-binding model and within nonequilibrium Green's function approach, we study charge transport through DNA sequences (GC)NGC and (GC)1(TA)NTA (GC)3 sandwiched between two Pt electrodes. We show that at low temperature DNA sequence (GC)NGC exhibits coherent charge carrier transport at very small bias, since the highest occupied molecular orbital in the GC base pair can be aligned with the Fermi energy of the metallic electrodes by a gate voltage. A weak distance dependent conductance is found in DNA sequence (GC)1(TA)NTA (GC)3 with large NTA. Different from the mechanism of thermally induced hopping of charges proposed by the previous experiments, we find that this phenomenon is dominated by quantum tunnelling through discrete quantum well states in the TA base pairs. In addition, ac response of this DNA junction under light illumination is also investigated. The suppression of ac conductances of the left and right lead of DNA sequences at some particular frequencies is attributed to the excitation of electrons in the DNA to the lead Fermi surface by ac potential, or the excitation of electrons in deep DNA energy levels to partially occupied energy levels in the transport window. Therefore, measuring ac response of DNA junctions can reveal a wealth of information about the intrinsic dynamics of DNA molecules. PMID:25927276

  10. Charge transport and ac response under light illumination in gate-modulated DNA molecular junctions

    NASA Astrophysics Data System (ADS)

    Zhang, Yan; Zhu, Wen-Huan; Ding, Guo-Hui; Dong, Bing; Wang, Xue-Feng

    2015-05-01

    Using a two-strand tight-binding model and within nonequilibrium Green's function approach, we study charge transport through DNA sequences {{(GC)}{{NGC}}} and {{(GC)}1}{{(TA)}{{NTA}}}{{(GC)}3} sandwiched between two Pt electrodes. We show that at low temperature DNA sequence {{(GC)}{{NGC}}} exhibits coherent charge carrier transport at very small bias, since the highest occupied molecular orbital in the GC base pair can be aligned with the Fermi energy of the metallic electrodes by a gate voltage. A weak distance dependent conductance is found in DNA sequence {{(GC)}1}{{(TA)}{{NTA}}}{{(GC)}3} with large NTA. Different from the mechanism of thermally induced hopping of charges proposed by the previous experiments, we find that this phenomenon is dominated by quantum tunnelling through discrete quantum well states in the TA base pairs. In addition, ac response of this DNA junction under light illumination is also investigated. The suppression of ac conductances of the left and right lead of DNA sequences at some particular frequencies is attributed to the excitation of electrons in the DNA to the lead Fermi surface by ac potential, or the excitation of electrons in deep DNA energy levels to partially occupied energy levels in the transport window. Therefore, measuring ac response of DNA junctions can reveal a wealth of information about the intrinsic dynamics of DNA molecules.

  11. Microscopic observation of carrier-transport dynamics in quantum-structure solar cells using a time-of-flight technique

    SciTech Connect

    Toprasertpong, Kasidit; Fujii, Hiromasa; Sugiyama, Masakazu; Nakano, Yoshiaki; Kasamatsu, Naofumi; Kada, Tomoyuki; Asahi, Shigeo; Kita, Takashi; Wang, Yunpeng; Watanabe, Kentaroh

    2015-07-27

    In this study, we propose a carrier time-of-flight technique to evaluate the carrier transport time across a quantum structure in an active region of solar cells. By observing the time-resolved photoluminescence signal with a quantum-well probe inserted under the quantum structure at forward bias, the carrier transport time can be efficiently determined at room temperature. The averaged drift velocity shows linear dependence on the internal field, allowing us to estimate the quantum structure as a quasi-bulk material with low effective mobility containing the information of carrier dynamics. We show that this direct and real-time observation is more sensitive to carrier transport than other conventional techniques, providing better insights into microscopic carrier transport dynamics to overcome a device design difficulty.

  12. On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures

    SciTech Connect

    Aleksandrov, P. A. Belova, N. E.; Demakov, K. D.; Shemardov, S. G.

    2015-08-15

    A method for the production of high-quality radiation-resistant silicon-on-sapphire structures through the fabrication of a layer of nanopores in sapphire by helium ion implantation, i.e., by creating charge-carrier recombination centers, is proposed. In this case, the quality of the silicon layer is simultaneously improved. The problem of the thermal stability of the pores is discussed with the aim of analyzing the possibility of producing a microcircuit on the resultant modified silicon-on-sapphire sample. The layer of pores possesses a large total surface area and, hence, decreases the lifetime of charge carriers generated during irradiation of the operating microcircuit. This effect reduces the charge at the silicon-sapphire interface and improves radiation resistance.

  13. Charge transport in 4H-SiC detector structures under conditions of a high electric field

    SciTech Connect

    Ivanov, A. M. Mynbaeva, M. G.; Sadokhin, A. V.; Strokan, N. B.; Lebedev, A. A.

    2009-08-15

    Transport of nonequilibrium charge packets in a structure with a Schottky barrier fabricated on a CVD-grown n-4H-SiC film has been studied at the maximum strength of an electric field at 1.1 MV/cm. The charge was introduced by separate {alpha}-particles and recorded by nuclear spectrometric techniques. A superlinear rise in the recorded charge as a function of the reverse bias applied to the structure was observed. Simultaneously, and also superlinearly increased the scatter in the spectrum of the charge amplitude. The observed effect is attributed to the initial stage of impact ionization. The manifestation of the process at unconventionally low fields ({approx}1 MV/cm) is accounted for by specific features of the process of charge generation. Carriers generated by slowing-down {alpha}-particles are 'hot' from the very beginning.

  14. Interaction of a permeant maleimide derivative of cysteine with the erythrocyte glucose carrier. Differential labelling of an exofacial carrier thiol group and its role in the transport mechanism.

    PubMed Central

    May, J M

    1989-01-01

    S-(Bismaleimidomethyl ether)cysteine (Cys-Mal) was synthesized as a probe for reactive thiol groups on the erythrocyte glucose carrier. Although Cys-Mal entered cells, its reaction with intracellular GSH prevented alkylation of endofacial membrane proteins, limiting its effect to the cell surface at concentrations below 5 mM. Cys-Mal irreversibly inhibited hexose transport half-maximally at 1.5 mM by decreasing the maximal rate of transport, with no effect on the affinity of substrate for the carrier. Reaction occurred with the outward-facing form of the carrier, but did not affect the ability of the carrier to change orientation. In intact cells, several exofacial proteins were labelled by [35S]Cys-Mal, including the band-4.5 glucose carrier, the labelling of which occurred on a single site sensitive to transport inhibitors. The reactive exofacial group was a thiol group, since both transport inhibition and band-4.5 labelling by Cys-Mal were abolished by the thiol-specific and impermeant compound 5,5'-dithiobis(2-nitrobenzoic acid). Selectivity for carrier labelling in cells was increased by a double differential procedure, which in turn allowed localization of the exofacial thiol group to the Mr 18,000-20,000 membrane-bound tryptic carrier fragment. In protein-depleted ghosts the exofacial thiol group was preferentially labelled at low concentrations of [35S]Cys-Mal, whereas with the reagent at 10 mM the Mr 26,000-45,000 tryptic carrier fragment was also labelled. Cys-Mal should be useful in the study of carrier thiol-group location and function. PMID:2489029

  15. Switching and memory effects governed by the hopping mechanism of charge carrier transfer in composite films based on conducting polymers and inorganic nanoparticles

    NASA Astrophysics Data System (ADS)

    Aleshin, A. N.; Alexandrova, E. L.

    2008-10-01

    The switching and memory effects in composite films based on conducting polymers [poly(phenylenevinylene), thiophene, and carbazole derivatives] and inorganic nanoparticles (ZnO, Si) are investigated. It is established that the introduction of inorganic nanoparticles (ZnO, Si) exhibiting strong acceptor properties into polymer materials leads to the appearance of memory effects, which manifest themselves in the transition of the polymer from a low-conductivity state to a high-conductivity state. For a number of composites, this transition is accompanied by the formation of a region with a negative differential resistance and a hysteresis in the current-voltage characteristics. It is demonstrated that the observed effects are determined by the mechanism of charge carrier transfer in the composite. In particular, the main mechanism of transport in films based on thiophene derivatives is associated with electrical conduction due to the tunneling of charge carriers between conducting regions embedded in a nonconducting matrix, whereas the dominant mechanism of transport in “polymer-semiconductor nanoparticle” composite films is hopping conduction, which is responsible for the effects observed in these objects.

  16. Surface-charge-governed electrolyte transport in carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Xue, Jian-Ming; Guo, Peng; Sheng, Qian

    2015-08-01

    The transport behavior of pressure-driven aqueous electrolyte solution through charged carbon nanotubes (CNTs) is studied by using molecular dynamics simulations. The results reveal that the presence of charges around the nanotube can remarkably reduce the flow velocity as well as the slip length of the aqueous solution, and the decreasing of magnitude depends on the number of surface charges and distribution. With 1-M KCl solution inside the carbon nanotube, the slip length decreases from 110 nm to only 14 nm when the number of surface charges increases from 0 to 12 e. This phenomenon is attributed to the increase of the solid-liquid friction force due to the electrostatic interaction between the charges and the electrolyte particles, which can impede the transports of water molecules and electrolyte ions. With the simulation results, we estimate the energy conversion efficiency of nanofluidic battery based on CNTs, and find that the highest efficiency is only around 30% but not 60% as expected in previous work. Project supported by the National Natural Science Foundation of China (Grant Nos. 11375031 and 11335003).

  17. Spatial localization of excitons and charge carriers in hybrid perovskite thin films

    SciTech Connect

    Simpson, Mary Jane; Doughty, Benjamin; Yang, Bin; Xiao, Kai; Ma, Ying -Zhong

    2015-07-21

    The fundamental photophysics underlying the remarkably high power conversion efficiency of organic-inorganic hybrid perovskite-based solar cells has been increasingly studied using complementary spectroscopic techniques. The spatially heterogeneous polycrystalline morphology of the photoactive layers owing to the presence of distinct crystalline grains has been generally neglected in optical measurements and therefore the reported results are typically averaged over hundreds or even thousands of such grains. Here, we apply femtosecond transient absorption microscopy to spatially and temporally probe ultrafast electronic excited-state dynamics in pristine methylammonium lead tri-iodide (CH3NH3PbI3) thin films and composite structures. We found that the electronic excited-state relaxation kinetics are extremely sensitive to the sample location probed, which was manifested by position-dependent decay timescales and transient signals. As a result, analysis of transient absorption kinetics acquired at distinct spatial positions enabled us to identify contributions of excitons and free charge carriers.

  18. Ruthenium cation substitutional doping for efficient charge carrier transfer in organic/inorganic hybrid solar cells

    NASA Astrophysics Data System (ADS)

    Kong, Degui; Jin, Xiao; Sun, Weifu; Du, Jiaxing; Tong, Jifeng; Chen, Changyong; Yang, Xuwei; Cheng, Yuanyuan; Li, Qinghua

    2015-01-01

    Solution-processed organic/inorganic hybrid solar cells have emerged as a new platform for low-cost optoelectronics. At the heart of photovoltaic devices lies the matching of a junction, which requires the suitable energy level alignment of n-type and p-type semiconductors. Incorporating foreign ions into bulk semiconductors has been largely employed for many decades, yet electronically active doping in energy level control of the hybrid bulk heterojunctions has been rarely involved and the demonstration of robust functional optoelectronic devices had thus far been elusive. Herein, we introduce Ru ions into TiO2 to decorate the energy level of the acceptor to gain better energy level alignment between the donor and acceptor. By reducing the 'excess' energy offset between the n-type and p-type semiconductors, the electron transfer becomes faster, thus leading to a notable enhancement in power conversion efficiency, i.e., from 2.20% to 2.89%. The results demonstrate that the energy level can be controlled effectively by the versatile Ru dopants. This work opens an effective route for accelerating the charge carrier transfer at the interface and achieving high-performance organic/inorganic hybrid optoelectronic devices.

  19. Spatial localization of excitons and charge carriers in hybrid perovskite thin films

    DOE PAGESBeta

    Simpson, Mary Jane; Doughty, Benjamin; Yang, Bin; Xiao, Kai; Ma, Ying -Zhong

    2015-07-21

    The fundamental photophysics underlying the remarkably high power conversion efficiency of organic-inorganic hybrid perovskite-based solar cells has been increasingly studied using complementary spectroscopic techniques. The spatially heterogeneous polycrystalline morphology of the photoactive layers owing to the presence of distinct crystalline grains has been generally neglected in optical measurements and therefore the reported results are typically averaged over hundreds or even thousands of such grains. Here, we apply femtosecond transient absorption microscopy to spatially and temporally probe ultrafast electronic excited-state dynamics in pristine methylammonium lead tri-iodide (CH3NH3PbI3) thin films and composite structures. We found that the electronic excited-state relaxation kinetics aremore » extremely sensitive to the sample location probed, which was manifested by position-dependent decay timescales and transient signals. As a result, analysis of transient absorption kinetics acquired at distinct spatial positions enabled us to identify contributions of excitons and free charge carriers.« less

  20. Computational Confirmation of the Carrier for the "XCN" Interstellar Ice Bank: OCN(-) Charge Transfer Complexes

    NASA Technical Reports Server (NTRS)

    Park, J.-Y.; Woon, D. E.

    2004-01-01

    Recent experimental studies provide evidence that carrier for the so-called XCN feature at 2165 cm(exp -1) (4.62 micron) in young stellar objects is an OCN(-)/NH4(+) charge transfer (CT) complex that forms in energetically processed interstellar icy grain mantles. Although other RCN nitriles and RCN iosonitriles have been considered, Greenberg's conjecture that OCN(-) is associated with the XCN feature has persisted for over 15 years. In this work we report a computational investigation that thoroughly confirms the hypothesis that the XCN feature observed in laboratory studies can result from OCN(-)/NH4(+) CT complexes arising from HNCO and NH3, in a water ice environment. Density functional theory calculations with theory calculations with HNCO, NH3, and up to 12 waters reproduce seven spectroscopic measurements associated with XCN: the band origin of the asymmetric stretching mode of OCN(-), shifts due to isotopic substitutions of C, N, O, and H, and two weak features. However, very similar values are also found for the OCN(-)/NH4(+) CT complex arising from HOCN and NH3. In both cases, the complex forms by barrierless proton transfer from HNCO or HOCN to NH3 during the optimization of the solvated system. Scaled B3LYP/6-31+G** harmonic frequencies for HNCO and HOCN cases are 2181 and 2202 cm(exp -1), respectively.

  1. Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

    NASA Astrophysics Data System (ADS)

    Harrison, S.; Young, M. P.; Hodgson, P. D.; Young, R. J.; Hayne, M.; Danos, L.; Schliwa, A.; Strittmatter, A.; Lenz, A.; Eisele, H.; Pohl, U. W.; Bimberg, D.

    2016-02-01

    Charge-carrier confinement in nanoscale In-rich agglomerations within a lateral InGaAs quantum well (QW) formed from stacked submonolayers (SMLs) of InAs in GaAs is studied. Low-temperature photoluminescence (PL) and magneto-PL clearly demonstrate strong vertical and weak lateral confinement, yielding two-dimensional (2D) excitons. In contrast, high-temperature (400 K) magneto-PL reveals excited states that fit a Fock-Darwin spectrum, characteristic of a zero-dimensional (0D) system in a magnetic field. This paradox is resolved by concluding that the system is heterodimensional: the light electrons extend over several In-rich agglomerations and see only the lateral InGaAs QW, i.e., are 2D, while the heavier holes are confined within the In-rich agglomerations, i.e., are 0D. This description is supported by single-particle effective-mass and eight-band k .p calculations. We suggest that the heterodimensional nature of nanoscale SML inclusions is fundamental to the ability of respective optoelectronic devices to operate efficiently and at high speed.

  2. Charge carriers' trapping states in pentacene films studied by modulated photocurrent

    NASA Astrophysics Data System (ADS)

    Gorgolis, S.; Giannopoulou, A.; Kounavis, P.

    2013-03-01

    The modulated photocurrent (MPC) technique is employed to study the charge carriers' trapping states of pentacene films. The characteristics of the experimental MPC spectra were found to be compatible with trapping-detrapping process of holes in gap states in which their occupancy can be modified by the bias illumination. A demarcation energy level separating empty from partially occupied traps was deduced from the MPC spectra, which can be used to monitor bias-light induced changes in the quasi Fermi level. An exponential trap distribution from structural disorder and a deep metastable gaussian trap distribution from adsorbed environmental impurities were extracted by means of the MPC spectroscopy. An attempt to escape frequency of the order of 1010s-1 was deduced for the gap sates. The derived trap distributions agree with those found before by means of other techniques. The present results indicate that the MPC technique can be used as a valuable tool for pentacene films characterization since it can be also applied to field effect samples.

  3. Charge-carrier states and light absorption in ordered quantum dot superlattices

    NASA Astrophysics Data System (ADS)

    Nika, D. L.; Pokatilov, E. P.; Shao, Q.; Balandin, A. A.

    2007-09-01

    We have theoretically investigated the electron and hole energy spectra and light absorption in the three-dimensionally ordered quantum dots superlattices (QDS) made of the direct band-gap semiconductors. The calculations were performed for QDS of the rhombic symmetry with a substantial electron (hole) wave-function overlap using a one-band Hamiltonian for the electrons and six-band Hamiltonian for the holes. The obtained results were compared with the predictions of the simplified models for the uncoupled heavy, light, and split-off holes. It has been shown that the energy spectra of the electrons and holes in the ordered QDS are distinctively different from those in the single quantum dots (QD) or conventional quantum-well superlattices. The charge-carrier dispersion and localization are very sensitive to the quasicrystallographic directions defined by the dots, which play a role of the atoms in such QD supracrystal. We found that in the ordered QDS the oscillator strength for the interband optical transitions can be high for a relatively wide range of the photon energies. The obtained results are important for the proposed applications of QDS in solar cells, photodetectors, and thermoelectrics.

  4. Synthesis of p -and n-type Gels Doped with Ionic Charge Carriers

    NASA Astrophysics Data System (ADS)

    Alveroglu, E.; Yilmaz, Y.

    2010-03-01

    In this study, we synthesized the new kinds of semiconducting polymeric gels having negative ( n-type) and positive ( p-type) counter ions as charge carriers. The polyacrylamide gel was doped with pyranine (8-hydroxypyrene-1,3,6-trisulfonic acid, trisodium salt), having {text{SO}}3^{ - } ions as side groups and Na+ as counter ions, so-called p-type semiconducting gel. The doping process was performed during the polymerization where the pyranine binds to the polymer strands over OH group chemically via radical addition. In a similar way, N-isopropylacrylamide (NIPA) gel was doped with methacrylamidopropyltrimethyl ammonium chloride (MAPTAC), having Cl- as counter ions, so-called n-type semiconducting gel. Here MAPTAC was embedded by copolymerization within the polymer network (NIPA). These semiconducting gels can show different electrical properties by changing the concentration of the doping agents, swelling ratio etc. We have shown that the pn junction, formed by combining p-type and n-type gels together in close contact, rectifies the current similar to the conventional Si and Ge diodes.

  5. Ion-mediated charge transport in ionomeric electrolytes.

    PubMed

    Lu, Keran; Maranas, Janna K; Milner, Scott T

    2016-05-01

    Ionomers, or single-ion conductors, serve as a model system to study ion transport in polymeric systems. Conductivity is a system property that depends on the net charge transport in the system. The mechanism through which ions are transported can dramatically change the contribution of an ion's self-motion (i.e. diffusion coefficient) to the conductivity of the system. For example, positive and negative ions diffusing as a pair have no net contribution to conductivity. In a coarse-grained molecular dynamics simulation of sodium-neutralized poly(PEO-co-sulfoisophthalate), we show that ion transport is mediated through consecutive coordination with ion pairs and higher order clusters due to the high density of ions. This transport mechanism is highly efficient and shows evidence of cation relaying. We show that larger ion aggregates can serve as ion-conducting paths for positive charges, and demonstrate how a highly ordered ion aggregate network can improve conductivity by enhancing correlated ion transport. PMID:27019986

  6. Efficient, non-toxic anion transport by synthetic carriers in cells and epithelia.

    PubMed

    Li, Hongyu; Valkenier, Hennie; Judd, Luke W; Brotherhood, Peter R; Hussain, Sabir; Cooper, James A; Jurček, Ondřej; Sparkes, Hazel A; Sheppard, David N; Davis, Anthony P

    2016-01-01

    Transmembrane anion transporters (anionophores) have potential for new modes of biological activity, including therapeutic applications. In particular they might replace the activity of defective anion channels in conditions such as cystic fibrosis. However, data on the biological effects of anionophores are scarce, and it remains uncertain whether such molecules are fundamentally toxic. Here, we report a biological study of an extensive series of powerful anion carriers. Fifteen anionophores were assayed in single cells by monitoring anion transport in real time through fluorescence emission from halide-sensitive yellow fluorescent protein. A bis-(p-nitrophenyl)ureidodecalin shows especially promising activity, including deliverability, potency and persistence. Electrophysiological tests show strong effects in epithelia, close to those of natural anion channels. Toxicity assays yield negative results in three cell lines, suggesting that promotion of anion transport may not be deleterious to cells. We therefore conclude that synthetic anion carriers are realistic candidates for further investigation as treatments for cystic fibrosis. PMID:26673261

  7. Efficient, non-toxic anion transport by synthetic carriers in cells and epithelia

    NASA Astrophysics Data System (ADS)

    Li, Hongyu; Valkenier, Hennie; Judd, Luke W.; Brotherhood, Peter R.; Hussain, Sabir; Cooper, James A.; Jurček, Ondřej; Sparkes, Hazel A.; Sheppard, David N.; Davis, Anthony P.

    2016-01-01

    Transmembrane anion transporters (anionophores) have potential for new modes of biological activity, including therapeutic applications. In particular they might replace the activity of defective anion channels in conditions such as cystic fibrosis. However, data on the biological effects of anionophores are scarce, and it remains uncertain whether such molecules are fundamentally toxic. Here, we report a biological study of an extensive series of powerful anion carriers. Fifteen anionophores were assayed in single cells by monitoring anion transport in real time through fluorescence emission from halide-sensitive yellow fluorescent protein. A bis-(p-nitrophenyl)ureidodecalin shows especially promising activity, including deliverability, potency and persistence. Electrophysiological tests show strong effects in epithelia, close to those of natural anion channels. Toxicity assays yield negative results in three cell lines, suggesting that promotion of anion transport may not be deleterious to cells. We therefore conclude that synthetic anion carriers are realistic candidates for further investigation as treatments for cystic fibrosis.

  8. Polarized recombination of acoustically transported carriers in GaAs nanowires

    PubMed Central

    2012-01-01

    The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation during transport. PMID:22583747

  9. Experimental study of the minority-carrier transport at the polysilicon-monosilicon interface

    SciTech Connect

    Neugroshel, A.; Arienzo, M.; Isaac, R.D.; Komem, Y.

    1985-04-01

    This paper presents the results of an experimental study to explore the mechanism of improved current gain in bipolar transistors with polysilicon emitter contacts. The electrical properties were measured using p-n junction test structures that are more sensitive to the contact properties than are bipolar transistors. A phenomenological model was used to correlate the structural properties with electrical measurements. Possible transport mechanisms are examined and estimates are made about upper bounds on transport parameters in the principal regions of the devices. The main conclusion is that the minority-carrier transport in the polycrystalline silicon is dominated by a highly disordered layer at the polysilicon-monosilicon interface characterized by very low minority-carrier mobility. The effective recombination velocity at the n/sup +/ polysilicon-n/sup +/ monosilicon interface was found to be a strong function of fabrication conditions. The results indicate that the recombination velocity can be much smaller than 10/sup 4/ cm/s.

  10. Charge carrier mobility in crystals of the Pb0.67Cd0.33F2 superionic conductor

    NASA Astrophysics Data System (ADS)

    Sorokin, N. I.

    2015-07-01

    The frequency (ν = 10-1-107 Hz) dependences σ(ν) of the conductivity of single crystals of the Pb0.67Cd0.33F2 superionic conductor with the fluorite-type structure (CaF2) in the temperature range of 132-395 K have been studied. The dependences σ(ν) have been discussed in the framework of the hopping relaxation of ionic carriers, which are mobile anions F-. From experimental curves σ(ν), the direct-current (dc) conductivity σdc and the average charge carrier hopping frequency νh have been determined. This has made it possible to calculate the charge carrier mobility μmob and charge carrier concentration n mob in these crystals. At room temperature (293 K), the electrical parameters are σdc = 1.6 × 10-4 S/cm, νh = 2.7 × 107 Hz, μmob = 2.0 × 10-7 cm2/(s V), and n mob = 5.1 × 1021 cm-3.

  11. TFG clusters COPII-coated transport carriers and promotes early secretory pathway organization

    PubMed Central

    Johnson, Adam; Bhattacharya, Nilakshee; Hanna, Michael; Pennington, Janice G; Schuh, Amber L; Wang, Lei; Otegui, Marisa S; Stagg, Scott M; Audhya, Anjon

    2015-01-01

    In mammalian cells, cargo-laden secretory vesicles leave the endoplasmic reticulum (ER) en route to ER-Golgi intermediate compartments (ERGIC) in a manner dependent on the COPII coat complex. We report here that COPII-coated transport carriers traverse a submicron, TFG (Trk-fused gene)-enriched zone at the ER/ERGIC interface. The architecture of TFG complexes as determined by three-dimensional electron microscopy reveals the formation of flexible, octameric cup-like structures, which are able to self-associate to generate larger polymers in vitro. In cells, loss of TFG function dramatically slows protein export from the ER and results in the accumulation of COPII-coated carriers throughout the cytoplasm. Additionally, the tight association between ER and ERGIC membranes is lost in the absence of TFG. We propose that TFG functions at the ER/ERGIC interface to locally concentrate COPII-coated transport carriers and link exit sites on the ER to ERGIC membranes. Our findings provide a new mechanism by which COPII-coated carriers are retained near their site of formation to facilitate rapid fusion with neighboring ERGIC membranes upon uncoating, thereby promoting interorganellar cargo transport. PMID:25586378

  12. Photoexcited carrier transport in InGaAsP/InP quantum well laser structure

    NASA Astrophysics Data System (ADS)

    Marcinkevičius, S.; Olin, U.; Wallin, J.; Streubel, K.; Landgren, G.

    1994-10-01

    Measurements of photoexcited carrier transport in InGaAsP/InP graded-gap separate-confinement quantum well laser structures with a step-like profile of the graded layers are performed by time-resolved photoluminescence using upconversion. In all the investigated structures ambipolar carrier motion can be characterized by a constant velocity of (1.5±0.2)×106 cm/s. The experimental results are discussed in terms of step-driven and ordinary diffusion.

  13. Intermediate tunnelling-hopping regime in DNA charge transport

    NASA Astrophysics Data System (ADS)

    Xiang, Limin; Palma, Julio L.; Bruot, Christopher; Mujica, Vladimiro; Ratner, Mark A.; Tao, Nongjian

    2015-03-01

    Charge transport in molecular systems, including DNA, is involved in many basic chemical and biological processes, and its understanding is critical if they are to be used in electronic devices. This important phenomenon is often described as either coherent tunnelling over a short distance or incoherent hopping over a long distance. Here, we show evidence of an intermediate regime where coherent and incoherent processes coexist in double-stranded DNA. We measure charge transport in single DNA molecules bridged to two electrodes as a function of DNA sequence and length. In general, the resistance of DNA increases linearly with length, as expected for incoherent hopping. However, for DNA sequences with stacked guanine-cytosine (GC) base pairs, a periodic oscillation is superimposed on the linear length dependence, indicating partial coherent transport. This result is supported by the finding of strong delocalization of the highest occupied molecular orbitals of GC by theoretical simulation and by modelling based on the Büttiker theory of partial coherent charge transport.

  14. On the advancement of quantum dot solar cell performance through enhanced charge carrier dynamics

    NASA Astrophysics Data System (ADS)

    Baker, David R.

    The quantum dot solar cell is one of the few solar technologies which promises to compete with fossil fuels, but work is still needed to increase its performance. Electron transfer kinetics at interfaces and limitations of the redox couple within the cell, are responsible for lowering power conversion efficiency. Several techniques which are able to increase electron transfer within the working electrode and at the counter electrode/electrolyte interface are discussed in this dissertation. Trap sites on the surface of CdSe quantum dots are created when mercaptopropionic acid (MPA) is added to the suspension. The trap sites are emissive creating a loss pathway for photogenerated charges which will manifest as reduced photocurrent. MPA displaces amines on the surface of CdSe creating Se vacancies. Emission properties are controlled by the concentration of MPA. Because trap sites are generated, a more successful method to sensitize TiO2 films is the SILAR technique which directly grows quantum dots on the desired surface. Anodically etched TiO2 nanotubes yield photocurrents 20% greater than TiO2 nanoparticles because of longer electron diffusion lengths. Peak incident photon to charge carrier efficiencies of TiO2 nanotube samples show a doubling of photocurrent in the visible region compared to nanoparticles. The TiO2 substrates are sensitized with CdS by the SILAR process which is found to utilize both the inside and outside surfaces of the TiO2 nanotubes. Etched TiO2 nanotubes are removed from the underlying titanium foil in order to use spectroscopic techniques. Ultrafast transient absorption shows the extremely fast nature of charge injection from SILAR CdS into TiO 2 nanotubes. Surface area analysis of TiO2 nanotube powder gives an area of 77m2/g, a value 1.5 times larger than traditional TiO2 nanoparticles. By isolating the counter electrode with a salt bridge the effect of the polysulfide electrolyte is found to act as an electron scavenger on the working electrode. Though activity at the platinum counter electrode increases with the presence of polysulfides, the activity is too low to counteract scavenging at the working electrode. Cu2S, CoS and PbS electrochemically show promise as alternatives to platinum. Cu2S and CoS produce higher photocurrents and fill factors, greatly improving cell performance.

  15. Effect of charge trapping on effective carrier lifetime in compound semiconductors: High resistivity CdZnTe

    SciTech Connect

    Kamieniecki, Emil

    2014-11-21

    The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is the trapping of charge carriers. The charge trapping affects energy resolution through the carrier lifetime more than through the mobility. Conventionally, the effective carrier lifetime is determined using a 2-step process based on measurement of the mobility-lifetime product (μτ) and determining drift mobility using time-of-flight measurements. This approach requires fabrication of contacts on the sample. A new RF-based pulse rise-time method, which replaces this 2-step process with a single non-contact direct measurement, is discussed. The application of the RF method is illustrated with high-resistivity detector-grade CdZnTe crystals. The carrier lifetime in the measured CdZnTe, depending on the quality of the crystals, was between about 5 μs and 8 μs. These values are in good agreement with the results obtained using conventional 2-step approach. While the effective carrier lifetime determined from the initial portion of the photoresponse transient combines both recombination and trapping in a manner similar to the conventional 2-step approach, both the conventional and the non-contact RF methods offer only indirect evaluation of the effect of charge trapping in the semiconductors used in radiation detectors. Since degradation of detector resolution is associated not with trapping but essentially with detrapping of carriers, and, in particular, detrapping of holes in n-type semiconductors, it is concluded that evaluation of recombination and detrapping during photoresponse decay is better suited for evaluation of compound semiconductors used in radiation detectors. Furthermore, based on previously reported data, it is concluded that photoresponse decay in high resistivity CdZnTe at room temperature is dominated by detrapping of carriers from the states associated with one type of point defect and by recombination of carriers at one type of extended defects. The recombination at the extended defects produces long, logarithmic decay limiting substantially performance of CdZnTe detectors. This decay is associated with the “electrostatic trapping” of excess holes by the Schottky-type depletion space-charge regions formed around the defects.

  16. Controlling protein transport in ultrafiltration using small charged ligands.

    PubMed

    Rao, Suma; Zydney, Andrew L

    2005-09-20

    Previous studies have demonstrated that protein transport during ultrafiltration can be strongly influenced by solution pH and ionic strength. The objective of this study was to examine the possibility of controlling protein transmission using a small, highly charged ligand that selectively binds to the protein of interest. Experiments were performed using bovine serum albumin and the dye Cibacron Blue. Protein sieving data were obtained with essentially neutral and negatively charged versions of a composite regenerated cellulose membrane to examine the effects of electrostatic interactions. The addition of only 1 g/L of Cibacron Blue to an 8 g/L BSA solution reduced the BSA sieving coefficient through the negatively-charged membrane by more than two orders of magnitude, with this effect being largely eliminated at high salt and with the neutral membrane. Protein sieving data were in good agreement with model calculations based on the partitioning of a charged sphere in a charged pore accounting for the change in net protein charge due to ligand binding and the increase in solution ionic strength due to the free ligand in solution. PMID:15895379

  17. Kinetics of optically excited charge carriers at the GaN surface: Influence of catalytic Pt nanostructures

    NASA Astrophysics Data System (ADS)

    Winnerl, Andrea; Pereira, Rui N.; Stutzmann, Martin

    2015-10-01

    In this work, we use GaN with different deposited Pt nanostructures as a controllable model system to investigate the kinetics of photo-generated charge carriers in hybrid photocatalysts. We combine conductance and contact potential difference measurements to investigate the influence of Pt on the processes involved in the capture and decay of photo-generated charge carriers at and close to the GaN surface. We found that in the presence of Pt nanostructures the photo-excitation processes are similar to those found in Pt free GaN. However, in GaN with Pt nanostructures, photo-generated holes are preferentially trapped in surface states of the GaN covered with Pt and/or in electronic states of the Pt and lead to an accumulation of positive charge there, whereas negative charge is accumulated in localized states in a shallow defect band of the GaN covered with Pt. This preferential accumulation of photo-generated electrons close to the surface is responsible for a dramatic acceleration of the turn-off charge transfer kinetics and a stronger dependence of the surface photovoltage on light intensity when compared to a Pt free GaN surface. Our study shows that in hybrid photocatalysts, the metal nanostructures induce a spatially inhomogeneous surface band bending of the semiconductor that promotes a lateral drift of photogenerated charges towards the catalytic nanostructures.

  18. Charge Transport and Structural Dynamics in Deep Eutectic Mixtures

    NASA Astrophysics Data System (ADS)

    Cosby, Tyler; Holt, Adam; Terheggen, Logan; Griffin, Philip; Benson, Roberto; Sangoro, Joshua

    2015-03-01

    Charge transport and structural dynamics in a series of imidazole and carboxylic acid-based deep eutectic mixtures are investigated by broadband dielectric spectroscopy, dynamic light scattering, 1H nuclear magnetic resonance spectroscopy, calorimetry, and Fourier transform infrared spectroscopy. It is found that the extended hydrogen-bonded networks characteristic of imidazoles are broken down upon addition of carboxylic acids, resulting in an increase in dc conductivity of the mixtures. These results are discussed within the framework of recent theories of hydrogen bonding and proton transport.

  19. Flexoelectric rectification of charge transport in strain-graded dielectrics.

    PubMed

    Lee, Daesu; Yang, Sang Mo; Yoon, Jong-Gul; Noh, Tae Won

    2012-12-12

    Flexoelectricity is emerging as a fascinating means for exploring the physical properties of nanoscale materials. Here, we demonstrated the unusual coupling between electronic transport and the mechanical strain gradient in a dielectric epitaxial thin film. Utilizing the nanoscale strain gradient, we showed the unique functionality of flexoelectricity to generate a rectifying diode effect. Furthermore, using conductive atomic force microscopy, we found that the flexoelectric effect can govern the local transport characteristics, including spatial conduction inhomogeneities, in thin-film epitaxy systems. Consideration of the flexoelectric effect will improve understanding of the charge conduction mechanism at the nanoscale and may facilitate the advancement of novel nanoelectronic device design. PMID:23190011

  20. DNA-mediated charge transport for DNA repair

    NASA Astrophysics Data System (ADS)

    Boon, Elizabeth M.; Livingston, Alison L.; Chmiel, Nikolas H.; David, Sheila S.; Barton, Jacqueline K.

    2003-10-01

    MutY, like many DNA base excision repair enzymes, contains a [4Fe4S]2+ cluster of undetermined function. Electrochemical studies of MutY bound to a DNA-modified gold electrode demonstrate that the [4Fe4S] cluster of MutY can be accessed in a DNA-mediated redox reaction. Although not detectable without DNA, the redox potential of DNA-bound MutY is 275 mV versus NHE, which is characteristic of HiPiP iron proteins. Binding to DNA is thus associated with a change in [4Fe4S]3+/2+ potential, activating the cluster toward oxidation. Given that DNA charge transport chemistry is exquisitely sensitive to perturbations in base pair structure, such as mismatches, we propose that this redox process of MutY bound to DNA exploits DNA charge transport and provides a DNA signaling mechanism to scan for mismatches and lesions in vivo.