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Sample records for chemical bath deposited

  1. Chemical bath deposition of II-VI compound thin films

    NASA Astrophysics Data System (ADS)

    Oladeji, Isaiah Olatunde

    II-VI compounds are direct bandgap semiconductors with great potentials in optoelectronic applications. Solar cells, where these materials are in greater demand, require a low cost production technology that will make the final product more affordable. Chemical bath deposition (CBD) a low cost growth technique capable of producing good quality thin film semiconductors over large area and at low temperature then becomes a suitable technology of choice. Heterogeneous reaction in a basic aqueous solution that is responsible for the II-VI compound film growth in CBD requires a metal complex. We have identified the stability constant (k) of the metal complex compatible with CBD growth mechanism to be about 106.9. This value is low enough to ensure that the substrate adsorbed complex relax for subsequent reaction with the chalcogen precursor to take place. It is also high enough to minimize the metal ion concentration in the bath participating in the precipitation of the bulk compounds. Homogeneous reaction that leads to precipitation in the reaction bath takes place because the solubility products of bulk II-VI compounds are very low. This reaction quickly depletes the bath of reactants, limit the film thickness, and degrade the film quality. While ZnS thin films are still hard to grow by CBD because of lack of suitable complexing agent, the homogeneous reaction still limits quality and thickness of both US and ZnS thin films. In this study, the zinc tetraammine complex ([Zn(NH3) 4]2+) with k = 108.9 has been forced to acquire its unsaturated form [Zn(NH3)3]2+ with a moderate k = 106.6 using hydrazine and nitrilotriacetate ion as complementary complexing agents and we have successfully grown ZnS thin films. We have also, minimized or eliminated the homogeneous reaction by using ammonium salt as a buffer and chemical bath with low reactant concentrations. These have allowed us to increase the saturation thickness of ZnS thin film by about 400% and raise that of US film

  2. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    NASA Astrophysics Data System (ADS)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I–V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  3. Influence of Deposition Time on ZnS Thin Films Performance with Chemical Bath Deposition

    NASA Astrophysics Data System (ADS)

    Zhou, Limei; Tang, Nan; Wu, Sumei; Hu, Xiaofei; Xue, Yuzhi

    ZnS thin films had been deposited by chemical bath deposition method onto glass substrates in alkaline liquor. The reaction solution is made of ZnSO4, NH4OH and SC(NH2)2. Different deposition times (1 h, 1.5 h, 2 h, 2.5 h and 3 h) were selected to study the performance of ZnS thin films. As the results, the ZnS films' thickness were about 50-207 nm. XRD results showed an amorphous structure. Through comparing the surface morphology before and after annealing, it could be seen that annealing made some particles grow up and the surface smooth and even. The transmittance decreased with the increase of deposition time in the range of 300-800 nm. The transmittance of annealed ZnS film was lower than that of deposited one in the range of 300-800 nm. The ZnS band gap values were calculated in the range of 3.72-3.9 eV.

  4. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

    PubMed Central

    Schneider, Andreas M; Eiden, Stefanie

    2015-01-01

    Summary In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps), a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zinc oxide crystallites. The present work aims to transfer this gained knowledge to the formation of zinc oxide films. The influence of hyaluronic acid and the time of its addition on the morphology of the resulting ZnO film were investigated. By meticulous adjustment of the parameters in this step, the film morphology can be tailored to provide an optimal growth platform for the third step (a subsequent chemical bath deposition step). In this step, the film is covered by a dense layer of ZnO. This optimized procedure leads to ZnO films with a very high electrical conductivity, opening up interesting possibilities for applications of such films. The films were characterized by means of electron microscopy, X-ray diffraction and measurements of the electrical conductivity. PMID:25977851

  5. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition.

    PubMed

    Waltz, Florian; Schwarz, Hans-Christoph; Schneider, Andreas M; Eiden, Stefanie; Behrens, Peter

    2015-01-01

    In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps), a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zinc oxide crystallites. The present work aims to transfer this gained knowledge to the formation of zinc oxide films. The influence of hyaluronic acid and the time of its addition on the morphology of the resulting ZnO film were investigated. By meticulous adjustment of the parameters in this step, the film morphology can be tailored to provide an optimal growth platform for the third step (a subsequent chemical bath deposition step). In this step, the film is covered by a dense layer of ZnO. This optimized procedure leads to ZnO films with a very high electrical conductivity, opening up interesting possibilities for applications of such films. The films were characterized by means of electron microscopy, X-ray diffraction and measurements of the electrical conductivity. PMID:25977851

  6. Preparation and Characterization of SnO2 thin films deposited by Chemical Bath Deposition method

    NASA Astrophysics Data System (ADS)

    Yusuf, Gbadebo; Raimi, Adepoju; Familusi, Timothy; Awodugba, Ayodeji; Efunwole, Hezekiah

    2013-04-01

    SnO2 thin films have been deposited onto the soda lime glass substrates by the chemical bath deposition method. The structural and optical properties of the SnO2 thin films were investigated. Tin chloride solution (SnCl2) and methanol were used as starting materials at substrate temperature 300°C. The crystal structure and orientation of the SnO2 thin films were investigated by X-ray diffraction (XRD) patterns. The average grain size of the films was calculated using the Scherer formula and was found to be 29.6 nm which increased to 30.04nm after annealing in air at 400°C. The optical absorbance and transmittance measurements were recorded by using spectrophotometer. The average transmittance of the film was around 80 % at wavelength 550 nm. The optical band gap of the thin films was determined and found to be 3.71eV. The gas sensing properties of tin oxide thin films obtained in this work could be performed for different gases like CO, CH4, H2S, H2 etc. The Authors would like to acknowledge the encouragement and financial support from the Management of Osun state Polytechnic, Iree.

  7. Preparation and Characterization of SnO2 thin films deposited by Chemical Bath Deposition method

    NASA Astrophysics Data System (ADS)

    Yusuf, Gbadebo T.; Raimi, Adepoju M.; Familusi, Timothy O.; Awodugba, Ayodeji O.; Efunwole, Hezekiah O.

    2013-04-01

    SnO2 thin films have been deposited onto the soda lime glass substrates by the chemical bath deposition method. The structural and optical properties of the SnO2 thin films were investigated. Tin chloride solution (SnCl2) and methanol were used as starting materials at substrate temperature 300^oC. The crystal structure and orientation of the SnO2 thin films were investigated by X-ray diffraction (XRD) patterns. The average grain size of the films was calculated using the Scherer formula and was found to be 29.6 nm which increased to 30.04nm after annealing in air at 400^oC. The optical absorbance and transmittance measurements were recorded by using spectrophotometer. The average transmittance of the film was around 80 % at wavelength 550 nm. The optical band gap of the thin films was determined and found to be 3.71eV. The gas sensing properties of tin oxide thin films obtained in this work could be performed for different gases like CO, CH4, H2S, H2 etc.

  8. Comprehensive optical studies on SnS layers synthesized by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Gedi, Sreedevi; Minnam Reddy, Vasudeva Reddy; Park, Chinho; Chan-Wook, Jeon; Ramakrishna Reddy, K. T.

    2015-04-01

    A simple non-vacuum and cost effective wet chemical technique, chemical bath deposition was used to prepare tin sulphide (SnS) layers on glass substrates. The layers were formed by varying bath temperature in the range, 40-80 °C, keeping other deposition parameters as constant. An exhaustive investigation on their optical properties with bath temperature was made using the transmittance and reflectance measurements. The absorption coefficient was evaluated from the optical transmittance data utilizing Lambert's principle and is >104 cm-1 for all the as-prepared layers. The energy band gap of the layers was determined from the differential reflectance spectra that varied from 1.41 eV to 1.30 eV. Consequently, refractive index and extinction coefficient were obtained from Pankov relations and dispersion constants were calculated using Wemple-Didomenico method. In addition, other optical parameters such as the optical conductivity, dielectric constants, dissipation factor, high frequency dielectric constant and relaxation time were also calculated. Finally electrical parameters such as resistivity, carrier mobility and carrier density of as-prepared layers were estimated using optical data. A detailed analysis of the dependence of all above mentioned parameters on bath temperature is reported and discussed for a clean understanding of electronic characteristics of SnS layers.

  9. Nanocrystalline CuInSSe thin films by chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Shrotriya, Vipin; Rajaram, P.

    2016-05-01

    Crystalline CuInSSe thin films have been deposited on glass substrate by chemical bath deposition technique. The CuCl2, InCl3, thiourea and SeO2 were used as source materials for the Cu2+, In3+, S2- and Se2- ions and the Cu/In ratio was kept at 1.0. EDC was used as a complexing agent. The XRD, Scanning Electron Microscope (SEM), Energy Dispersive Analysis of X-Ray (EDAX) and Optical transmission studies were used for structural analysis, surface morphology, elemental analysis and optical band gap, of the grown thin films respectively. The deposition parameters such as pH, deposition temperature and deposition time were optimized.

  10. Annealing effect on Cu2S thin films prepared by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    More, Pawan; Dhanayat, Swapnali; Gattu, Ketan; Mahajan, Sandeep; Upadhye, Deepak; Sharma, Ramphal

    2016-05-01

    In present work Cu2S thin film fabricated on glass substrate by simple, cost effective chemical bath deposition method subsequently it annealed at 150°c.These films were studied for their structural, optical and electrical properties using X-ray diffraction, UV-vis spectrophotometer and I-V system. The results show successful synthesis of Cu2S thin films and improvement in crystalline nature of the thin film which resulted in reduced bad gap and resistance of the film. Thus these thinfilms prove to be a promising candidate for solar cell application.

  11. Fabrication of ZnO nanorod using spray-pyrolysis and chemical bath deposition method

    SciTech Connect

    Ramadhani, Muhammad F. Pasaribu, Maruli A. H. Yuliarto, Brian Nugraha

    2014-02-24

    ZnO thin films with nanorod structure were deposited using Ultrasonic Spray Pyrolysis method for seed growth, and Chemical Bath Deposition (CBD) for nanorod growth. High purity Zn-hydrate and Urea are used to control Ph were dissolved in ethanol and aqua bidest in Ultrasonic Spray Pyrolysis process. Glass substrate was placed above the heater plate of reaction chamber, and subsequently sprayed with the range duration of 5, 10 and 20 minutes at the temperatures of 3500 C. As for the Chemical Bath Deposition, the glass substrate with ZnO seed on the surface was immerse to Zn-hydrate, HMTA (Hexa Methylene Tetra Amine) and deionized water solution for duration of 3, 5 and 7 hour and temperatures of 600 C, washed in distilled water, dried, and annealed at 3500 C for an hour. The characterization of samples was carried out to reveal the surface morphology using Scanning Electron Microscopy (SEM). From the data, the combination of 5 minutes of Ultrasonic Spray Pyrolysis process and 3 hour of CBD has showed the best structure of nanorod. Meanwhile the longer Spraying process and CBD yield the bigger nanorod structure that have been made, and it makes the films more dense which make the nanorod collide each other and as a result produce unsymetric nanorod structure.

  12. Low-temperature chemical bath deposition of crystalline ZnO

    NASA Astrophysics Data System (ADS)

    Jacobs, Klaus; Balitsky, Denis; Armand, Pascale; Papet, Philippe

    2010-03-01

    ZnO crystals can be grown from alkaline aqueous solution not only by the standard hydrothermal technique at temperatures between 350 °C and 400 °C, but also by chemical bath deposition (CBD) at temperatures below 100 °C. In the presence of ZnO and ScAlMgO 4 (SCAM) substrates almost all ZnO deposits on the substrate, with different habits, however. Under optimized conditions even homoepitaxial layers can be obtained, while rod-like structures are obtained on SCAM substrates. The chemistry and the driving forces behind the two processes are considered in detail and the temperature dependence of the solution composition has been calculated. The driving force for the ZnO crystal growth in the standard hydrothermal technique is the difference in the ZnO solubility in alkaline solutions at different temperatures. In contrast, the driving force for the chemical bath deposition of ZnO at low temperatures is the decay of zinc ion complex molecules with increasing temperature.

  13. Chemical-Bath-Deposited Indium Oxide Microcubes for Solar Water Splitting.

    PubMed

    Mali, Mukund G; Yoon, Hyun; Kim, Hayong; Joshi, Bhavana; Al-Deyab, Salem S; Yoon, Sam S

    2015-11-16

    We fabricated films of cubic indium oxide (In2O3) by chemical bath deposition (CBD) for solar water splitting. The fabricated films were characterized by X-ray diffraction analysis, Raman scattering, X-ray photoelectron spectroscopy, and scanning electron microscopy, and the three-dimensional microstructure of the In2O3 cubes was elucidated. The CBD deposition time was varied, to study its effect on the growth of the In2O3 microcubes. The optimal deposition time was determined to be 24 h, and the corresponding film exhibited a photocurrent density of 0.55 mA cm(-2). Finally, the film stability was tested by illuminating the films with light from an AM 1.5 filter with an intensity of 100 mW cm(-2). PMID:26332269

  14. Annealing effect on structural and optical properties of chemical bath deposited MnS thin film

    NASA Astrophysics Data System (ADS)

    Ulutas, Cemal; Gumus, Cebrail

    2016-03-01

    MnS thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 °C. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (150, 300 and 450 °C) for 1 h. The MnS thin film was characterized by using X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement system. The effect of annealing temperature on the structural, electrical and optical properties such as optical constants of refractive index (n) and energy band gap (Eg) of the film was determined. XRD measurements reveal that the film is crystallized in the wurtzite phase and changed to tetragonal Mn3O4 phase after being annealed at 300 °C. The energy band gap of film decreased from 3.69 eV to 3.21 eV based on the annealing temperature.

  15. Chemical Bath Deposition of Aluminum Oxide Buffer on Curved Surfaces for Growing Aligned Carbon Nanotube Arrays.

    PubMed

    Wang, Haitao; Na, Chongzheng

    2015-07-01

    Direct growth of vertically aligned carbon nanotube (CNT) arrays on substrates requires the deposition of an aluminum oxide buffer (AOB) layer to prevent the diffusion and coalescence of catalyst nanoparticles. Although AOB layers can be readily created on flat substrates using a variety of physical and chemical methods, the preparation of AOB layers on substrates with highly curved surfaces remains challenging. Here, we report a new solution-based method for preparing uniform layers of AOB on highly curved surfaces by the chemical bath deposition of basic aluminum sulfate and annealing. We show that the thickness of AOB layer can be increased by extending the immersion time of a substrate in the chemical bath, following the classical Johnson-Mehl-Avrami-Kolmogorov crystallization kinetics. The increase of AOB thickness in turn leads to the increase of CNT length and the reduction of CNT curviness. Using this method, we have successfully synthesized dense aligned CNT arrays of micrometers in length on substrates with highly curved surfaces including glass fibers, stainless steel mesh, and porous ceramic foam. PMID:26053766

  16. Chemical bath deposition of Cu3BiS3 thin films

    NASA Astrophysics Data System (ADS)

    Deshmukh S., G.; Panchal A., K.; Vipul, Kheraj

    2016-05-01

    First time, copper bismuth sulfide (Cu3BiS3) thin films were synthesized on the glass substrate using simple, low-cost chemical bath deposition (CBD) technique. The synthesized parameters such as temperature of bath, pH and concentration of precursors were optimized for the deposition of uniform, well adherent Cu3BiS3 thin films. The optical, surface morphology and structural properties of the Cu3BiS3 thin films were studied using UV-VIS-NIR spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The as- synthesized Cu3BiS3 film exhibits a direct band gap 1.56 to 1.58 eV having absorption coefficient of the order of 105 cm-1. The XRD declares the amorphous nature of the films. SEM images shows films were composed of close-packed fine spherical nanoparticles of 70-80 nm in diameter. The chemical composition of the film was almost stoichiometric. The optical study indicates that the Cu3BiS3 films can be applied as an absorber layer for thin film solar cells.

  17. Synthesis and Characterization of SnO2 Thin Films by Chemical Bath Deposition

    NASA Astrophysics Data System (ADS)

    Rifai, Aditia; Iqbal, Muhammad; Nugraha; Nuruddin, Ahmad; Suyatman; Yuliarto, Brian

    2011-12-01

    SnO2 thin films were deposited on glass substrate by chemical bath deposition (CBD) with stannous chloride (SnCl2..2H2O) as a precursor and urea (CO(NH2)2) as a buffer. X-Ray Diffraction (XRD) are used to characterize the structure of the films; the surface morphology of the films were observed by Scanning Electron Microscope (SEM). Using this techniques, we specify the effect of stannous chloride concentration and weight ratio of urea/H2O on the crystallinity and morphology of these films. The rutile structure corresponding (110), (101) and (211) planes of SnO2 is obtained. The increasing of stannous chloride concentration and the decreasing weight ratio of urea/H2O is found to improve the crystallinity of the film. The average diameter of grain size is about 96 nm.

  18. Chemical bath deposition of cadmium sulfide on graphene-coated flexible glass substrate

    SciTech Connect

    Seo, Won-Oh; Jung, Younghun; Kim, Jihyun; Kim, Jiwan; Kim, Donghwan

    2014-03-31

    We demonstrate a flexible structure of cadmium sulfide (CdS) on graphene-coated glass substrate, where CdS was deposited by the chemical bath deposition method on defective tri-layer graphene. The defects in graphene, confirmed by micro-Raman spectroscopy, were created by a ultra-violet treatment with varying exposure time from 10 to 60 min. The number of defect sites in the graphene as a seed layer was related to the quality of the CdS thin films determined from the results from X-ray diffraction, optical transmittance, scanning electron microscopy, and room temperature micro-photoluminescence. Our film-on-substrate structure of CdS-graphene-on-glass was maintained up to a tensile strain of 0.3%, where graphene with a high failure strain was employed as a transparent conductive layer.

  19. Combinatorial Chemical Bath Deposition of CdS Contacts for Chalcogenide Photovoltaics.

    PubMed

    Mokurala, Krishnaiah; Baranowski, Lauryn L; de Souza Lucas, Francisco W; Siol, Sebastian; van Hest, Maikel F A M; Mallick, Sudhanshu; Bhargava, Parag; Zakutayev, Andriy

    2016-09-12

    Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers. PMID:27479495

  20. Chemical-bath deposition of ZnSe thin films: Process and material characterization

    SciTech Connect

    Dona, J.M.; Herrero, J.

    1995-03-01

    Chemical-bath deposition of ZnSe thin films from NH{sub 3}/NH{sub 2}-NH{sub 2}/SeC(NH{sub 2}){sub 2}/Na{sub 2}SO{sub 3}/ZnSO{sub 4} solutions has been studied. The effect of various process parameters on the growth and the film quality is presented. A first approach to a mechanistic interpretation of the chemical process, based on the influence of the process parameters on the film growth rate, is reported. The structural, optical, chemical, and electrical properties of the ZnSe thin-films deposited by this method have been studied. The electron diffraction (EDS) analysis shows that the films are microcrystalline with mixed cubic and hexagonal structure. EDS analysis has demonstrated that the films are highly stoichiometric. Scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy studies of the ZnSe thin films deposited by this method show that the films are continuous and homogeneous. Optical measurements have allowed the authors to detect the presence of the spin-orbit splitting effect in this material. Electrical conductivity measurements have shown the highly resistive nature of these films ({rho} {approximately} 10{sup 9} {Omega} cm).

  1. Characterization of PbS/PVA/GQDs nanocomposite prepared by chemical bath deposition method

    NASA Astrophysics Data System (ADS)

    Tohidi, Tavakkol; Jamshidi-Ghaleh, Kazem; Mohammad-Rezaei, Rahim

    2014-10-01

    This work reports synthesis of PbS quantum dots (QDs) embedded in the poly-vinyl alcohol (PVA) in the presence of graphene quantum dots (GQDs) by the low cost and simple method of chemical bath deposition. The as-synthesized products were characterized by X-ray diffraction, transmission electron microscope and optical studies; absorption and photoluminescence measurements. Results showed that in comparison with GQDs and PbS/PVA, photoluminescence intensity of PbS/PVA/GQDs was improved and this could be attributed to rigidity of the local environment, PVA passivation and energy transformation between GQDs and PbS QDs. These analyses determined good distribution of PbS QDs on GQDs planes which is promising for practical applications in nanotechnology.

  2. Comprehensive study of ZnO nanostructures grown using chemical bath deposition: from growth to application

    NASA Astrophysics Data System (ADS)

    Urgessa, Z. N.; Murape, D. M.; Oluwafemi, O. S.; Venter, A.; Wagner, M.; Botha, J. R.

    2011-12-01

    ZnO nanostructures were grown using a simple and environmentally friendly chemical bath deposition technique on pre-treated p-type silicon substrate at temperatures below 100°C. The effects of growth parameters like seed layer density, growth time, growth temperature, precursor concentration and annealing temperature on the structural, morphological, electrical and optical properties of ZnO nanorods were systematically studied using field emission scanning electron microscopy, X-ray diffraction, photoluminescence spectroscopy and current-voltage measurements. A variety of architectures is demonstrated, ranging from single crystalline nanoparticles and c-axis orientated nanorods to highly compact crystalline thin films. Post-growth annealing at different temperatures profoundly affects the optical properties of the nanorods by, for example, reducing hydrogen- and intrinsic defect-related emission. The rectifying properties of the ZnO/Si heterojunction are discussed.

  3. Superhydrophobic poly(vinylidene fluoride) film fabricated by alkali treatment enhancing chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Zheng, Zhenrong; Gu, Zhenya; Huo, Ruiting; Luo, Zhishan

    2010-01-01

    Based on the lotus effect principle, the superhydrophobic poly(vinylidene fluoride) (PVDF) film was successfully prepared by the method of alkali treatment enhancing chemical bath deposition. The surface of PVDF film prepared in this work was constructed by many smooth and regular microreliefs. Oxygen-containing functional groups were introduced in PVDF film by treatment with aqueous NaOH solution. The nano-scale peaks on the top of the microreliefs were implemented by the reaction between dimethyldichlorosilane/methyltrichlorosilane solution and the oxygen-containing functional groups of PVDF film. The micro- and nano-scale structures, similar to the lotus leaf, was clearly observed on PVDF film surface by scanning electronic microscopy (SEM) and atomic force microscope (AFM). The water contact angle and sliding angle on the fabricated lotus-leaf-like PVDF film surface were 157° and 1°, respectively, exhibiting superhydrophobic property and self-cleaning property.

  4. Photoconducting nanocrystalline lead sulphide thin films obtained by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Kotadiya, Naresh B.; Kothari, Anjana J.; Tiwari, Devendra; Chaudhuri, Tapas K.

    2012-09-01

    A chemical bath deposition method of preparing photoconducting nanocrystalline lead sulphide (PbS) thin films at room temperature (RT) is described. The aqueous bath of lead acetate, thiourea, and ammonium hydroxide produce films of about 100 nm thicknesses in 45 minutes. X-ray diffraction (XRD) studies show that these films are nanocrystalline cubic PbS with 10 nm crystallite size. Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) revealed that the films consist of spherical grains of sizes 100 to 200 nm. The transmission spectra of the films show onset of absorption edge around 850 nm and the bandgap is around 1.65 eV. The films are p-type with dark conductivity of 2.5×10-3 S/cm and mobility of 0.07 cm2/Vṡs. The photosensitivity is 6-7 for an illumination of 80 mW/cm2 from a halogen lamp (50 W, 12 V). Transient photoconductivity measurements reveal short and long life times of minority carriers. Thermoelectric and photothermoelectric studies show that photoconductivity in these films is mainly due to photogenerated majority carriers.

  5. Preparation and properties of zinc blende and orthorhombic SnS films by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Gao, Chao; Shen, Honglie; Sun, Lei

    2011-05-01

    SnS (stannous sulfide) films were prepared by chemical bath deposition in which a novel chelating reagent ammonium citrate was used. The film has a zinc blende structure or an orthorhombic structure which is determined by the pH value and the temperature of the deposition solution. The reason for this result is considered to be that SnS films prepared under different conditions have different deposition mechanisms (ion-by-ion mechanism for the zinc blende structured SnS and hydroxide cluster mechanism for the orthorhombic structured SnS). The prepared SnS films are homogeneous and well adhered. SEM images show that the SnS films with different structures have different surface morphologies. Electrical test shows that the resistivity of the films is as low as 420 Ω cm and 3300 Ω cm for orthorhombic and zinc blende SnS films, respectively, which are much lower than the ever reported values. Persistent photoconductivity (PPC) phenomena are observed for both the films with zinc blende and orthorhombic structures by photo-current responses measurement. The optical bandgaps of the SnS films are determined to be 1.75 eV and 1.15 eV for zinc blende structure and orthorhombic structure, respectively.

  6. Chemical bath deposition of semiconductor thin films & nanostructures in novel microreactors

    NASA Astrophysics Data System (ADS)

    McPeak, Kevin M.

    Chemical bath deposition (CBD) offers a simple and inexpensive route to deposit semiconductor nanostructures and thin films, but lack of fundamental understanding and control of the underlying chemistry has limited its versatility. CBD is traditionally performed in a batch reactor, requiring only a substrate to be immersed in a supersaturated solution of aqueous precursors such as metal salts, complexing agents, and pH buffers. Highlights of CBD include low cost, operation at low temperature and atmospheric pressure, and scalability to large area substrates. In this dissertation, I explore CBD of semiconductor thin films and nanowire arrays in batch and continuous flow microreactors. Microreactors offer many advantages over traditional reactor designs including a reduction in mass transport limitations, precise temperature control and ease of production scale-up by "numbering up". Continuous flow micoreactors offer the unique advantage of providing reaction conditions that are time-invariant but change smoothly as a function of distance down the reaction channel. Growth from a bath whose composition changes along the reactor length results in deposited materials whose properties vary as a function of position on the substrate, essentially creating a combinatorial library. These substrates can be rapidly characterized to identify relationships between growth conditions and material properties or growth mechanisms. I have used CBD in a continuous flow microreactor to deposit ZnO nanowire arrays and CdZnS films whose optoelectronic properties vary as a function of position. The spatially-dependent optoelectronic properties of these materials have been correlated to changes in the composition, structure or growth mechanisms of the materials and ultimately their growth conditions by rigorous spatial characterization. CBD in a continuous flow microreactor, coupled with spatial characterization, provides a new route to understanding the connection between CBD growth

  7. Electrical characteristics of (n)Si/(p)PbS heterojunction prepared by chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Hussain, Amir; Singh, Heisnam Shanjit; Rahman, Atowar

    2016-01-01

    Zn doped nanocrystalline PbS thin films is deposited on single crystal (n)-Si substrate by chemical bath deposition to form (n)Si/(p)PbS heterojunction structure. In order to study the current transport mechanism in (n)Si/(p)PbS heterojunction, the forward current-voltage characteristics is measured within the temperature 300 K - 340 K and capacitance-voltage characteristics is measured at a frequency of 1 kHz at 300 K. The forward current is greatly enhanced with increasing temperature whereas the reverse current is increased nominally. Junction parameters such as ideality factors, barrier heights, saturation current density, Richardson constant, etc. are determined from the I-V characteristics. The ideality factors are found to decrease with increase in temperature. The J-V characteristics under illumination showed poor photovoltaic effect of the junction. The higher value of ideality factor and poor photovoltaic conversion efficiency are due to the presence of interfacial layer, large series resistance and high defect density.

  8. Synthesis of CdS nanostructures using template-assisted ammonia-free chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Preda, N.; Enculescu, M.; Gherendi, F.; Matei, E.; Toimil-Molares, M. E.; Enculescu, I.

    2012-09-01

    CdS micro- and nano-structures (micro/nanotubes and nanostructured films) were obtained by ammonia-free chemical bath deposition using polymer templates (ion track-etched polycarbonate membranes and poly(styrene-hydroxyethyl methacrylate) nanosphere arrays). The semiconductor structures were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), optical absorption, photoluminescence and electrical measurements. The diameters of CdS tubes are between 300 nm and few microns and the lengths are up to tens of micrometers. The SEM images prove that the CdS films are nanostructured due to the deposition on the polymer nanosphere arrays. For both CdS structures (tubes and films) the XRD patterns show a hexagonal phase. The optical studies reveal a band gap value of about 2.5-2.6 eV and a red luminescence at ˜1.77 eV. A higher increase of conductivity is observed for illuminating the CdS nanostructured film when compared to the simple semiconductor film. This is a consequence of the periodic patterning induced by the polymer nanosphere array.

  9. Tuning the morphology of metastable MnS films by simple chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Dhandayuthapani, T.; Girish, M.; Sivakumar, R.; Sanjeeviraja, C.; Gopalakrishnan, R.

    2015-10-01

    In the present investigation, we have prepared the spherical particles, almond-like, and cauliflower-like morphological structures of metastable MnS films on glass substrate by chemical bath deposition technique at low temperature without using any complexing or chelating agent. The morphological change of MnS films with molar ratio may be due to the oriented aggregation of adjacent particles. The compositional purity of deposited film was confirmed by the EDAX study. X-ray diffraction and micro-Raman studies confirm the sulfur source concentration induced enhancement in the crystallization of films with metastable MnS phase (zinc-blende β-MnS, and wurtzite γ-MnS). The shift in PL emission peak with molar ratio may be due to the change in optical energy band gap of the MnS, which was further confirmed by the optical absorbance study. The paramagnetic behavior of the sample was confirmed by the M-H plot.

  10. Effect of Reaction Temperature of CdS Buffer Layers by Chemical Bath Deposition Method.

    PubMed

    Kim, Hye Jin; Kim, Chae-Woong; Jung, Duk Young; Jeong, Chaehwan

    2016-05-01

    This study investigated CdS deposition on a Cu(In,Ga)Se2 (CIGS) film via chemical bath deposition (CBD) in order to obtain a high-quality optimized buffer layer. The thickness and reaction temperature (from 50 degrees C to 65 degrees C) were investigated, and we found that an increase in the reaction temperature during CBD, resulted in a thicker CdS layer. We obtained a thin film with a thickness of 50 nm at a reaction temperature of 60 degrees C, which also exhibited the highest photoelectric conversion efficiency for use in solar cells. Room temperature time-resolved photoluminescence (TR-PL) measurements were performed on the Cu(In,Ga)Se2 (CIGS) thin film and CdS/CIGS samples to determine the recombination process of the photo-generated minority carrier. The device performance was found to be dependent on the thickness of the CdS layer. As the thickness of the CdS increases, the fill factor and the series resistance increased to 61.66% and decreased to 8.35 Ω, respectively. The best condition was observed at a reaction temperature of 60 degrees C, and its conversion efficiency was 12.20%. PMID:27483883

  11. Chemical bath deposition and characterization of electrochromic thin films of sodium vanadium bronzes

    SciTech Connect

    Najdoski, Metodija; Koleva, Violeta; Demiri, Sani

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer We report a new chemical bath method for the deposition of vanadium bronze thin films. Black-Right-Pointing-Pointer The films are phase mixture of NaV{sub 6}O{sub 15} and Na{sub 1.1}V{sub 3}O{sub 7.9} with 10.58% lattice water. Black-Right-Pointing-Pointer The as-deposited vanadium bronze films exhibit two-step electrochromism. Black-Right-Pointing-Pointer They change their yellow-orange color to green and then from green to blue color. Black-Right-Pointing-Pointer The method allows the preparation of films on substrates with low melting point. -- Abstract: Thin yellow-orange films of sodium vanadium oxide bronzes have been prepared from a sodium-vanadium solution (1:1) at 75 Degree-Sign C and pH = 3. The composition, structure and morphology of the films have been studied by XRD, IR spectroscopy, TG and SEM-EDX analyses. It has been established that the prepared films are a phase mixture of hydrated NaV{sub 6}O{sub 15} (predominant component) and Na{sub 1.1}V{sub 3}O{sub 7.9} with total water content of 10.58%. The sodium vanadium bronze thin films exhibit two-step electrochromism followed by color change from yellow-orange to green, and then from green to blue. The cyclic voltammetry measurements on the as-deposited and annealed vanadium bronze films reveal the existence of different oxidation/reduction vanadium sites which make these films suitable for electrochromic devices. The annealing of the films at 400 Degree-Sign C changes the composition, optical and electrochemical properties.

  12. Study of the morphology of ZnS thin films deposited on different substrates via chemical bath deposition.

    PubMed

    Gómez-Gutiérrez, Claudia M; Luque, P A; Castro-Beltran, A; Vilchis-Nestor, A R; Lugo-Medina, Eder; Carrillo-Castillo, A; Quevedo-Lopez, M A; Olivas, A

    2015-01-01

    In this work, the influence of substrate on the morphology of ZnS thin films by chemical bath deposition is studied. The materials used were zinc acetate, tri-sodium citrate, thiourea, and ammonium hydroxide/ammonium chloride solution. The growth of ZnS thin films on different substrates showed a large variation on the surface, presenting a poor growth on SiO2 and HfO2 substrates. The thin films on ITO substrate presented a uniform and compact growth without pinholes. The optical properties showed a transmittance of about 85% in the visible range of 300-800 nm with band gap of 3.7 eV. PMID:26011683

  13. Surface studies, structural characterization and quantity determination of PbSe nanocrystals deposited by chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Ghobadi, Nader; Hatam, Ebrahim Gholami

    2015-05-01

    High quality PbSe nanostructural films are prepared by a chemical bath deposition (CBD) method. The experimental surface studies including scanning electron microscopy (SEM) and X-ray diffraction (XRD) have been used to analyze PbSe nanostructure indicated high purity of sample without cracks or holes in nanostructure scale. Quantity of material is relatively hard to measure accurately for thin films. Rutherford Backscattering Spectroscopy (RBS) was used to obtain stoichiometry as well as thin film thickness. For all nanoparticles size (50-250 nm) we found that the Pb to Se ratio (Pb:Se) variation in depth is approximately constant value of 0.42±0.06 until near to the substrate where it's value diminishes.

  14. Investigation of chemical bath deposition of CdO thin films using three different complexing agents

    NASA Astrophysics Data System (ADS)

    Khallaf, Hani; Chen, Chia-Ta; Chang, Liann-Be; Lupan, Oleg; Dutta, Aniruddha; Heinrich, Helge; Shenouda, A.; Chow, Lee

    2011-09-01

    Chemical bath deposition of CdO thin films using three different complexing agents, namely ammonia, ethanolamine, and methylamine is investigated. CdSO 4 is used as Cd precursor, while H 2O 2 is used as an oxidation agent. As-grown films are mainly cubic CdO 2, with some Cd(OH) 2 as well as CdO phases being detected. Annealing at 400 °C in air for 1 h transforms films into cubic CdO. The calculated optical band gap of as-grown films is in the range of 3.37-4.64 eV. Annealed films have a band gap of about 2.53 eV. Rutherford backscattering spectroscopy of as-grown films reveals cadmium to oxygen ratio of 1.00:1.74 ± 0.01 while much better stoichiometry is obtained after annealing, in accordance with the X-ray diffraction results. A carrier density as high as 1.89 × 10 20 cm -3 and a resistivity as low as 1.04 × 10 -2 Ω-cm are obtained.

  15. Investigation of chemical bath deposition of ZnO thin films using six different complexing agents

    NASA Astrophysics Data System (ADS)

    Khallaf, Hani; Chai, Guangyu; Lupan, Oleg; Heinrich, Helge; Park, Sanghoon; Schulte, Alfons; Chow, Lee

    2009-07-01

    Chemical bath deposition of ZnO thin films using six different complexing agents, namely ammonia, hydrazine, ethanolamine, methylamine, triethanolamine and dimethylamine, is investigated. As-grown films were mainly ZnO2 with a band gap around 4.3 eV. Films annealed at 400 °C were identified as ZnO with a band gap around 3.3 eV. X-ray diffraction and micro-Raman spectroscopy revealed that as-grown films consist mainly of cubic zinc peroxide that was transformed into hexagonal ZnO after annealing. Rutherford backscattering spectroscopy (RBS) detected excess oxygen content in ZnO films after annealing. Fourier transform infrared spectroscopy of as-grown films showed a broad absorption band around 3300 cm-1 suggesting that the as-grown films may consist of a mixture of zinc peroxide and zinc hydroxide. X-ray photoelectron spectroscopy multiplex spectra of the O 1s peak were found to be consistent with film stoichiometry revealed by RBS. High-resolution transmission electron micrographs showed small variations of the order of 10 nm in film thickness which corresponds to the average grain size. A carrier density as high as 2.24×1019 cm-3 and a resistivity as low as 6.48 × 10-1 Ω cm were obtained for films annealed at 500 °C in argon ambient.

  16. Optical and Electrical Properties of Pure and Y-Doped n-SnSe Films Deposited by Chemical Bath Deposition

    NASA Astrophysics Data System (ADS)

    He, H. Y.

    2015-09-01

    Pure and Y3+-doped SnSe films were fabricated by chemical bath deposition. The deposited films were characterized by x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, ultraviolet-visible spectrophotometry, photoluminescence spectrophotometry, and electrical conduction measurement. Since the films were deposited from the precursor solution with Se/Sn < 1, the Se/Sn molar ratios in the films was also smaller than the stoichiometric ratio. The films had thicknesses of ~409-615 nm and average transmittances of ~73.45-84.10% in the wavelength range of 350-850 nm. The direct and indirect optical band gaps estimated from the optical spectra with two methods of calculating absorption coefficiency. These bandgap values increased as decreasing Y3+-doping content. The films also showed a strong emission centered at ~699 nm and a weak emission centered at ~510 nm. The films showed n-type conduction and electrical resistance of ~5.83-96.40 × 10-3 Ω cm that decreased with increasing Y content. The refractive index, extinction coefficient, optical conductivity, and dielectric constant of the films were calculated with the transmittance and reflectance spectra.

  17. Structural and optical properties of nano-structured CdS thin films prepared by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Bai, Rekha; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K.

    2016-05-01

    Cadmium sulfide (CdS) thin films have been deposited on conducting glass substrates by chemical bath deposition (CBD) technique. The effect of precursor concentration on the structural, morphological, compositional, and optical properties of the CdS films has been studied. Crystal structure of these CdS films is characterized by X-ray diffraction (XRD) and it reveals polycrystalline structure with mixture of cubic and wurtzite phases with grain size decreasing as precursor concentration is increased. Optical studies reveal that the CdS thin films have high transmittance in visible spectral region reaching 90% and the films possess direct optical band gap that decreases from 2.46 to 2.39 eV with decreasing bath concentration. Our study suggests that growth is nucleation controlled.

  18. Morphological control of PbS grown on functionalized self-assembled monolayers by chemical bath deposition.

    PubMed

    Yang, Jing; Walker, Amy V

    2014-06-17

    We have investigated the chemical bath deposition (CBD) of PbS on functionalized alkanethiolate self-assembled monolayers (SAMs) using time-of-flight secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. The deposition mechanism involves both cluster-by-cluster and ion-by-ion growth. The dominant reaction pathway and the chemical composition and morphology of the deposited layer are dependent on both the SAM terminal group and the experimental conditions. On -COOH-terminated SAMs, three types of crystallites are observed: nanocrystals formed by heterogeneous ion-by-ion growth, larger needle-like particles, and ~2 μm particles deposited by homogeneous cluster-by-cluster deposition. The nanocrystals nucleate at Pb(2+)-carboxylate surface complexes, and so strongly adhere to the substrate. On -OH- and -CH3-terminated SAMs, only the micrometer-sized particles are formed by a cluster-by-cluster deposition mechanism. These particles do not adhere strongly to the SAM surface and can be easily removed. SIMS and XPS analyses indicate that the larger needle-like crystals and micrometer-sized particles are composed of oxidized lead sulfide and lead oxides, while the nanocrystals are composed of ≥85% PbS. Using sonication-assisted CBD, we demonstrate that PbS is deposited by ion-by-ion growth alone on -COOH-terminated SAMs. The deposited film is more compact with a smaller grain size and is >90% PbS. PMID:24854067

  19. Synthesis and characterization Bi2O2S thin film via chemical bath deposition at low pH

    NASA Astrophysics Data System (ADS)

    KARİPER, İ. Afşin

    2016-06-01

    Bismuth oxysulfide thin film was prepared using Bi(NO3)3 and Na2S as reactive. Since bismuth in the form of bismuth oxide is dissolved into water, bismuth and sulfide concentration of the chemical bath is very important. Bismuth oxysulfide (Bi2O2S) thin films were produced below pH 2. Tested bismuth and sulfide concentrations are as follows: 2 × 10- 1 M, 2 × 10- 2 M, 2 × 10- 3 M, 2 × 10- 4 M bismuth and 1 × 10- 1 M, 1 × 10- 2 M, 1 × 10- 3 M, 1 × 10- 4 M sulfide. The structure of the films was examined via X-ray diffraction (XRD). Optical properties, such as transmission and absorbance were measured with Ultra violet-visible spectrum, and then refractive index and reflectivity were calculated. The pH of chemical bath was stabilized below pH of 2 using 13.85 mL concentrated nitric acid. Deposition time and temperature of the baths were 4 h and 30 °C. It has been found that bismuth and sulfide concentrations affected the structure and thickness of the film. Also, optical band gap of the films varied with concentration, parallel to the change of the structure and film thickness.

  20. Synthesis and characterization Bi2O2S thin film via chemical bath deposition at low pH.

    PubMed

    Kariper, I Afşin

    2016-06-15

    Bismuth oxysulfide thin film was prepared using Bi(NO3)3 and Na2S as reactive. Since bismuth in the form of bismuth oxide is dissolved into water, bismuth and sulfide concentration of the chemical bath is very important. Bismuth oxysulfide (Bi2O2S) thin films were produced below pH2. Tested bismuth and sulfide concentrations are as follows: 2×10(-1)M, 2×10(-2)M, 2×10(-3)M, 2×10(-4)M bismuth and 1×10(-1)M, 1×10(-2)M, 1×10(-3)M, 1×10(-4)M sulfide. The structure of the films was examined via X-ray diffraction (XRD). Optical properties, such as transmission and absorbance were measured with Ultra violet-visible spectrum, and then refractive index and reflectivity were calculated. The pH of chemical bath was stabilized below pH of 2 using 13.85mL concentrated nitric acid. Deposition time and temperature of the baths were 4h and 30°C. It has been found that bismuth and sulfide concentrations affected the structure and thickness of the film. Also, optical band gap of the films varied with concentration, parallel to the change of the structure and film thickness. PMID:27043873

  1. The study of metal sulphide nanomaterials obtained by chemical bath deposition and hot-injection technique

    NASA Astrophysics Data System (ADS)

    Maraeva, E. V.; Alexandrova, O. A.; Forostyanaya, N. A.; Levitskiy, V. S.; Mazing, D. S.; Maskaeva, L. N.; Markov, V. Ph; Moshnikov, V. A.; Shupta, A. A.; Spivak, Yu M.; Tulenin, S. S.

    2015-11-01

    In this study lead sulphide - cadmium sulphide based layers were obtained through chemical deposition of water solutions and cadmium sulphide quantum dots were formed through hot-injection technique. The article discusses the results of surface investigations with the use of atomic force microscopy, Raman spectroscopy and photoluminescence measurements.

  2. The effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition

    PubMed Central

    2012-01-01

    This paper is dedicated to study the thin polycrystalline films of semiconductor chalcogenide materials (CdS, CdSe, and PbS) obtained by ammonia-free chemical bath deposition. The obtained material is of polycrystalline nature with crystallite of a size that, from a general point of view, should not result in any noticeable quantum confinement. Nevertheless, we were able to observe blueshift of the fundamental absorption edge and reduced refractive index in comparison with the corresponding bulk materials. Both effects are attributed to the material porosity which is a typical feature of chemical bath deposition technique. The blueshift is caused by quantum confinement in pores, whereas the refractive index variation is the evident result of the density reduction. Quantum mechanical description of the nanopores in semiconductor is given based on the application of even mirror boundary conditions for the solution of the Schrödinger equation; the results of calculations give a reasonable explanation of the experimental data. PMID:22931255

  3. Fabrication and morphology control of BaWO{sub 4} thin films by microwave assisted chemical bath deposition

    SciTech Connect

    Wang Rui; Liu Chen; Zeng Jia; Li KunWei; Wang Hao

    2009-04-15

    Highly crystallized barium tungstate (BaWO{sub 4}) thin films with dumbbell-like, kernel-like, bowknot-like and cauliflower-like microstructure were synthesized from an aqueous solution containing barium nitrate, ethylenediamine tetraacetate acid disodium and sodium tungstate, via mild microwave assisted chemical bath deposition process. The resulting BaWO{sub 4} films with different morphologies were characterized by X-ray diffraction spectrum, scanning electron microscope, Raman and photoluminescence spectra. The results indicate that the morphologies of final products significantly depend on the reaction conditions including the reaction time, the initial concentration of precursor reagent and the physicochemical characteristics of the substrates. Furthermore, the oriented aggregation mechanism is proposed as a possible formation mechanism of the films with specific morphologies. - Graphical abstract: Highly crystallized BaWO{sub 4} thin films with controllable morphologies have been synthesized via mild microwave assisted chemical bath deposition. The oriented aggregation mechanism has been proposed as the possible formation mechanism of specific films.

  4. Study of the crystallographic phase change on copper (I) selenide thin films prepared through chemical bath deposition by varying the pH of the solution

    NASA Astrophysics Data System (ADS)

    Sandoval-Paz, M. G.; Rodríguez, C. A.; Porcile-Saavedra, P. F.; Trejo-Cruz, C.

    2016-07-01

    Copper (I) selenide thin films with orthorhombic and cubic structure were deposited on glass substrates by using the chemical bath deposition technique. The effects of the solution pH on the films growth and subsequently the structural, optical and electrical properties of the films were studied. Films with orthorhombic structure were obtained from baths wherein both metal complex and hydroxide coexist; while films with cubic structure were obtained from baths where the metal hydroxide there is no present. The structural modifications are accompanied by changes in bandgap energy, morphology and electrical resistivity of the films.

  5. Synthesis of nanostructured and microstructured ZnO and Zn(OH)2 on activated carbon cloth by hydrothermal and microwave-assisted chemical bath deposition methods

    NASA Astrophysics Data System (ADS)

    Mosayebi, Elham; Azizian, Saeid; Hajian, Ali

    2015-05-01

    Nanostructured and microstructured ZnO and Zn(OH)2 loaded on activated carbon cloth were synthesized by microwave-assisted chemical bath deposition and hydrothermal methods. By hydrothermal method the deposited sample on carbon fiber is pure ZnO with dandelion-like nanostructures. By microwave-assisted chemical bath method the structure and composition of deposited sample depends on solution pH. At pH = 9.8 the deposited sample on carbon fiber is pure ZnO with flower-like microstructure; but at pH = 10.8 the sample is a mixture of ZnO and Zn(OH)2 with flower-like and rhombic microstructures, respectively. The mechanism of crystal grow by microwave-assisted chemical bath method was investigated by SEM method at both pH.

  6. Structural and optical studied of nano structured lead sulfide thin films prepared by the chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Al Din, Nasser Saad; Hussain, Nabiha; Jandow, Nidhal

    2016-07-01

    Lead (II) Sulfide PbS thin films were deposited on glass substrates at 25°C by chemical bath deposition (CBD) method. The structural properties of the films were studied as a function of the concentration of Thiourea (CS (NH2)2) as Source of Sulfide and deposition time. The surface morphology of the films was characterized by X-ray diffraction and SEM. The obtained results showed that the as-deposited films Polycrystalline had cubic crystalline phase that belong to S.G: Fm3m. We found that they have preferred orientation [200]. Also the thickness of thin films decrease with deposition time after certain value and, it observed free sulfide had orthorhombic phase. Optical properties showed that the thin films have high transmission at visible range and low transmission at UV, IR range. The films of PbS have direct band gap (I.68 - 2.32 ev) at 300K the values of band energy decreases with increases thickness of the Lead (II) Sulfide films.

  7. Structural and optical properties of Ni-doped CdS thin films prepared by chemical bath deposition method

    SciTech Connect

    Premarani, R.; Saravanakumar, S. Chandramohan, R.; Mahalingam, T.

    2015-06-24

    The structural and optical behavior of undoped Cadmiun Sulphide (CdS) and Ni-doped CdS thinfilms prepared by Chemical Bath Deposition (CBD) technique is reported. The crystallite sizes of the thinfilms have been characterized by X-ray diffraction pattern (XRD). The particle sizes increase with the increase of Ni content in the CdS thinfilms. Scanning Electron Microscope (SEM) results indicated that CdS thinfilms is made up of aggregate of spherical-like particles. The composition was estimated by Energy Dispersive Analysis of X-ray (EDX) and reported. Spectroscopic studies revealed considerable improvement in transmission and the band gap of the films changes with addition of Ni dopant that is associated with variation in crystallite sizes in the nano regime.

  8. Fabrication and morphology control of BaWO 4 thin films by microwave assisted chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Wang, Rui; Liu, Chen; Zeng, Jia; Li, KunWei; Wang, Hao

    2009-04-01

    Highly crystallized barium tungstate (BaWO 4) thin films with dumbbell-like, kernel-like, bowknot-like and cauliflower-like microstructure were synthesized from an aqueous solution containing barium nitrate, ethylenediamine tetraacetate acid disodium and sodium tungstate, via mild microwave assisted chemical bath deposition process. The resulting BaWO 4 films with different morphologies were characterized by X-ray diffraction spectrum, scanning electron microscope, Raman and photoluminescence spectra. The results indicate that the morphologies of final products significantly depend on the reaction conditions including the reaction time, the initial concentration of precursor reagent and the physicochemical characteristics of the substrates. Furthermore, the oriented aggregation mechanism is proposed as a possible formation mechanism of the films with specific morphologies.

  9. Structural Properties and Electrochemical Performance of ZnO Nanosheets Grown Directly on Al substrate by Chemical Bath Deposition Techniques

    NASA Astrophysics Data System (ADS)

    Al-Asadi, Ahmed; Ferrera, Roberto; Henley, Luke; Lopez, Nestor; Carozo, Victor; Lin, Zhong; Terrones, Mauricio; Talapatra, Saikat

    We will report on the synthesis & electrochemical characterization of 2-dimentional zinc oxide grown directly on Al substrate by a simple chemical bath deposition method at low temperature (below 1000C). Detail structural characterizations of the synthesized ZnO sheets will be presented and discussed. The electrochemical performances of electrochemical double layer capacitors (EDLC) on electrodes fabricated using these materials were evaluated using cyclic voltammetry, galvanostatic charge-discharge, and electrochemical impedance spectroscopy using various electrolytes. We found that high specific capacitance values (greater than 300 F/g) could be achieved using an aqueous electrolyte. The aforementioned results indicates the possibly for using 2-D ZnO architectures fabricated by this simple and cost efficient technique for future electrochemical energy storage devices.

  10. Fabrication and characterization of ultraviolet photosensors from ZnO nanowires prepared using chemical bath deposition method

    NASA Astrophysics Data System (ADS)

    Al-Asadi, Ahmed S.; Henley, Luke Alexander; Ghosh, Sujoy; Quetz, Abdiel; Dubenko, Igor; Pradhan, Nihar; Balicas, Luis; Perea-Lopez, Nestor; Carozo, Victor; Lin, Zhong; Terrones, Mauricio; Talapatra, Saikat; Ali, Naushad

    2016-02-01

    Highly crystalline zinc oxide (ZnO) nanowires (NWs) were synthesized through chemical bath deposition (CBD) method by using a simple seeding technique. The process includes dispersion of commercially available ZnO nanoparticles through spraying on a desired substrate prior to the CBD growth. A typical growth period of 16 h produced ZnO NW assemblies with an average diameter of ˜45 nm and lengths of 1-1.3 μm, with an optical band gap of ˜3.61 eV. The as-prepared ZnO NWs were photoactive under ultra violet (UV) illumination. Photodetector devices fabricated using these NW assemblies demonstrated a high photoresponse factor of ˜40 and 120 at room temperature under moderate UV illumination power of ˜250 μW/cm2. These findings indicate the possibility of using ZnO NWs, grown using the simple method discussed in this paper, for various opto-electronic applications.

  11. Role of the conducting layer substrate on TiO2 nucleation when using microwave activated chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Zumeta, I.; Espinosa, R.; Ayllón, J. A.; Vigil, E.

    2002-12-01

    Nanostructured TiO2 is used in novel dye sensitized solar cells. Because of their interaction with light, thin TiO2 films are also used as coatings for self-cleaning glasses and tiles. Microwave activated chemical bath deposition represents a simple and cost-effective way to obtain nanostructured TiO2 films. It is important to study, in this technique, the role of the conducting layer used as the substrate. The influence of microwave-substrate interactions on TiO2 deposition is analysed using different substrate positions, employing substrates with different conductivities, and also using different microwave radiation powers for film deposition. We prove that a common domestic microwave oven with a large cavity and inhomogeneous radiation field can be used with equally satisfactory results. The transmittance spectra of the obtained films were studied and used to analyse film thickness and to obtain gap energy values. The results, regarding different indium-tin oxide resistivities and different substrate positions in the oven cavity, show that the interaction of the microwave field with the conducting layer is determinant in layer deposition. It has also been found that film thickness increases with the power of the applied radiation while the gap energies of the TiO2 films decrease approaching the 3.2 eV value reported for bulk anatase. This indicates that these films are not crystalline and it agrees with x-ray spectra that do not reveal any peak.

  12. Effect of Thermal Annealing on the Band GAP and Optical Properties of Chemical Bath Deposited ZnSe Thin Films

    NASA Astrophysics Data System (ADS)

    Ezema, F. I.; Ekwealor, A. B. C.; Osuji, R. U.

    2006-05-01

    Zinc selenide (ZnSe) thin films were deposited on glass substrate using the chemical bath deposition method at room temperature from aqueous solutions of zinc sulphate and sodium selenosulfate in which sodium hydroxide was employed as complexing agents. The `as-deposited' ZnSe thin films are red in color and annealed in oven at 473 K for 1 hour and on a hot plate in open air at 333 K for 5 minutes, affecting the morphological and optical properties. Optical properties such as absorption coefficient a and extinction coefficient k, were determined using the absorbance and transmission measurement from Unico UV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200-1000 nm. The films have transmittance in VIS-NIR regions that range between 26 and 87%. From absorbance and transmittance spectra, the band gap energy determined ranged between 1.60 eV and 1.75 for the `as deposited' samples, and the annealed samples exhibited a band gap shift of 0.15 eV. The high transmittance of the films together with its large band gap made them good materials for selective coatings for solar cells.

  13. Single step synthesis of rutile TiO2 nanoflower array film by chemical bath deposition method

    NASA Astrophysics Data System (ADS)

    Dhandayuthapani, T.; Sivakumar, R.; Ilangovan, R.

    2016-05-01

    Titanium oxide (TiO2) nanostructures such as nanorod arrays, nanotube arrays and nanoflower arrays have been extensively investigated by the researchers. Among them nanoflower arrays has shown superior performance than other nanostructures in Dye sensitized solar cell, photocatalysis and energy storage applications. Herein, a single step synthesis for rutile TiO2 nanoflower array films suitable for device applications has been reported. Rutile TiO2 nanoflower thin film was synthesized by chemical bath deposition method using NaCl as an additive. Bath temperature induced evolution of nanoflower thin film arrays was observed from the morphological study. X-ray diffraction study confirmed the presence of rutile phase polycrystalline TiO2. Micro-Raman study revealed the presence of surface phonon mode at 105 cm-1 due to the phonon confinement effect (finite size effect), in addition with the rutile Raman active modes of B1g (143 cm-1), Eg (442 cm-1) and A1g (607 cm-1). Further, the FTIR spectrum confirmed the presence of Ti-O-Ti bonding vibration. The Tauc plot showed the direct energy band gap nature of the film with the value of 2.9 eV.

  14. Surface modification of cadmium sulfide thin film honey comb nanostructures: Effect of in situ tin doping using chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Wilson, K. C.; Basheer Ahamed, M.

    2016-01-01

    Even though nanostructures possess large surface to volume ratio compared to their thin film counterpart, the complicated procedure that demands for the deposition on a substrate kept them back foot in device fabrication techniques. In this work, a honey comb like cadmium sulfide (CdS) thin films nanostructure are deposited on glass substrates using simple chemical bath deposition technique at 65 °C. Energy band gaps, film thickness and shell size of the honey comb nanostructures are successfully controlled using tin (Sn) doping and number of shells per unit area is found to be maximum for 5% Sn doped (in the reaction mixture) sample. X-ray diffraction and optical absorption analysis showed that cadmium sulfide and cadmium hydroxide coexist in the samples. TEM measurements showed that CdS nanostructures are embedded in cadmium hydroxide just like "plum pudding". Persistent photoconductivity measurements of the samples are also carried out. The decay constants found to be increased with increases in Sn doping.

  15. Hall Coefficient Determination and Electrical Properties of Chemical Bath-Deposited n-WO3 Thin Films

    NASA Astrophysics Data System (ADS)

    Amaechi, Ifeanyichukwu C.; Nwanya, Assumpta C.; Asogwa, Paul U.; Osuji, Rose U.; Maaza, Malik; Ezema, Fabian I.

    2015-04-01

    Nanocrystalline and porous chemical bath-deposited n-WO3 thin films at low temperature (318 K) are reported. The high-quality and well-reproducible films have been fabricated by acidic hydrolysis of tungstate ion followed by thermal annealing at 573 K for 1 h. X-ray diffraction analyses of the deposited WO3 films revealed that they were amorphous. However, an amorphous-to-crystalline transition with monoclinic phase was observed. Atomic force microscopy (AFM) analyses revealed a homogenous but irregular cluster of faceted spherically-shaped grains with pores. Scanning electron microscopy corroborated the AFM results. The optical absorption analysis of WO3 film showed that direct optical transition exists in the photon energy range 3.00-4.00 eV with bandgap of 3.70 eV. The refractive index developed peak at 315 nm in the dispersion region while the high frequency dielectric constant ɛ ∞, and the carrier concentration to effective mass ratio, N/m*, were found to be 1.37 and 1.45 × 1039 cm-3, respectively. The temperature dependence of the electrical resistivity of the deposited films follows the semiconductor behavior with thermal activation energy of 2.0 meV, while the Hall coefficient R H was determined to be 0.17 cm3/A s.

  16. Mimicry of sputtered i-ZnO thin films using chemical bath deposition for solution-processed solar cells.

    PubMed

    Della Gaspera, Enrico; van Embden, Joel; Chesman, Anthony S R; Duffy, Noel W; Jasieniak, Jacek J

    2014-12-24

    Solution processing provides a versatile and inexpensive means to prepare functional materials with specifically designed properties. The current challenge is to mimic the structural, optical, and/or chemical properties of thin films fabricated by vacuum-based techniques using solution-based approaches. In this work we focus on ZnO to show that thin films grown using a simple, aqueous-based, chemical bath deposition (CBD) method can mimic the properties of sputtered coatings, provided that the kinetic and thermodynamic reaction parameters are carefully tuned. The role of these parameters toward growing highly oriented and dense ZnO thin films is fully elucidated through detailed microscopic and spectroscopic investigations. The prepared samples exhibit bulk-like optical properties, are intrinsic in their electronic characteristics, and possess negligible organic contaminants, especially when compared to ZnO layers deposited by sol-gel or from nanocrystal inks. The efficacy of our CBD-grown ZnO thin films is demonstrated through the effective replacement of sputtered ZnO buffer layers within high efficiency solution processed Cu2ZnSnS4xSe4(1-x) solar cells. PMID:25506738

  17. Production of HfO2 thin films using different methods: chemical bath deposition, SILAR and sol-gel process

    NASA Astrophysics Data System (ADS)

    Kariper, İ. A.

    2014-08-01

    Hafnium oxide thin films (HOTFs) were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction (SILAR), and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300°C in an oven (ambient conditions). After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffraction (XRD). The optical properties are investigated using the ultraviolet-visible (UV-VIS) spectroscopic technique. The film thickness was measured via atomic force microscopy (AFM) in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy (EDX). The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.

  18. Some physical effects of reaction rate on PbS thin films obtained by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Altıokka, Barış; Baykul, Mevlana Celalettin; Altıokka, Mehmet Rıza

    2013-12-01

    Thin films of polycrystalline lead sulfide (PbS) have been deposited on glass substrates at 303±1 K using chemical bath deposition (CBD). The precipitation of PbS on solid surfaces under four different reaction conditions was performed using a sodium sulfite (Na2SO3) compound as an inhibitor. The kinetics model for the reaction between Pb2+ and S2- was developed according to the amounts of Pb2+ concentrations measured by atomic absorption spectroscopy (AAS) during the precipitation of PbS. The surface morphologies of PbS thin films were studied with a Scanning Electron Microscope (SEM). It was found that the precipitation rate effects the formation of pinhole. To obtain a good quality of thin films the optimum concentration of lead nitrate (Pb(NO3)2), sodium hydroxide (NaOH), thiourea (CS(NH2)2) and Na2SO3 in the final solution was determined to be 0.0089, 0.1460, 0.510 and 0.00023 M, respectively. The film structures were characterized by X-ray diffractometer (XRD). The XRD results showed that the films formed galena cubic structures which represent the natural mineral of PbS. The crystallite sizes of the films were found to be between 23 and 37 nm.

  19. Coercivity enhancement of sintered Nd-Fe-B magnets by chemical bath deposition of TbCl{sub 3}

    SciTech Connect

    Guo, Shuai Zhang, Xiaofeng; Ding, Guangfei; Chen, Renjie; Yan, Aru; Lee, Don

    2014-05-07

    The chemical bath deposition (CBD) and the grain boundary diffusion method were combined to diffuse the heavy rare earth for obtain the thick magnets with high coercivity and low heavy rare earth. The jet mill powders were soaked into the alcohol solution of 0.2 wt. % TbCl{sub 3}. A thin layer of TbCl{sub 3} was wrapped to the surface of (PrNd){sub 2}Fe{sub 14}B powder particles. The coercivity of magnet is increased from 11.89 kOe to 14.72 kOe without significant reduction of remanence after grain boundary diffusion in the sintering and the annealing processes. The temperature coefficients of the remanence and the coercivity are improved by the substitution of PrNd by Tb in the surface of grains. The highly accelerated temperature/humidity stress test (HAST) results indicate that the CBD magnet has poor corrosion resistance, attributing to the present of Cl atoms in the grain boundaries.

  20. RETRACTED: Ammonia-free method for synthesis of CdS nanocrystalline thin films through chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Karimi, M.; Rabiee, M.; Moztarzadeh, F.; Bodaghi, M.; Tahriri, M.

    2009-11-01

    This article has been retracted: please see Elsevier Policy on Article Withdrawal ( http://www.elsevier.com/locate/withdrawalpolicy). This article has been retracted at the request of the Editor-in-Chief of Solid State Communications as the authors have plagiarized part of a paper that has also appeared in Current Applied Physics: Controlled synthesis, characterization and optical properties of CdS nanocrystalline thin films via chemical bath deposition (CBD) route Meysam Karimi, Mohammad Rabiee, Fathollah Moztarzadeh, Mohammadreza Tahriri and Masoud Bodaghi; Curr. Appl. Phys., 9 (2009) 1263-1268, doi: 10.1016/j.cap.2009.02.006. One of the conditions of submission of a paper for publication is that authors declare explicitly that their work is original and has not appeared in a publication elsewhere. Re-use of any data should be appropriately cited. As such this article represents a severe abuse of the scientific publishing system. The scientific community takes a very strong view on this matter and apologies are offered to readers of the journal that this was not detected during the submission process.

  1. Growth of CdS thin films on indium coated glass substrates via chemical bath deposition and subsequent air annealing

    NASA Astrophysics Data System (ADS)

    Ghosh, Biswajit; Kumar, Kamlesh; Singh, Balwant Kr; Banerjee, Pushan; Das, Subrata

    2014-11-01

    In the present work attempts were made to synthesize indium doped CdS films by fabricating In/CdS bilayers using CBD-CdS on vacuum evaporated In thin films and subsequent air annealing. 135 nm CdS films were grown onto 20 nm and 35 nm indium coated glass substrate employing chemical bath deposition technique. The In/CdS bilayers thus formed were subjected to heat treatment at the temperatures between 200 and 400 °C for 4 min in the muffle furnace to facilitate indium to diffuse into the CdS films. XRD pattern ascertained no noticeable shift in lattice constant implying grain boundary metal segregation, while secondary ion mass spectrometry indicated the diffusion profile of indium into CdS matrices. Mass spectrometry results showed that substantial diffusion of indium had been taken place within CdS at 400 °C. Dark and photocurrent with different illumination time were measured to ascertain the photosensitivity of pure and composite CdS films.

  2. Annealed Ce3+-doped ZnO flower-like morphology synthesized by chemical bath deposition method

    NASA Astrophysics Data System (ADS)

    Koao, Lehlohonolo F.; Dejene, Francis B.; Tsega, Moges; Swart, Hendrik C.

    2016-01-01

    We have successfully synthesized ZnO:xmol% Ce3+ (0≤x≤10 mol%) doped nanopowders via the chemical bath deposition method (CBD) technique at low temperature (80 °C) and annealed in air at 700 °C. The X-ray diffraction patterns showed that all the undoped and Ce-doped ZnO nanopowders have a hexagonal wurtzite polycrystalline structure with an average crystallite size of about 46 nm. Weak diffraction peaks related mainly to cerium oxide were also detected at higher concentrations of Ce3+ (x=5-10 mol%). The scanning electron microscopy study revealed that the nanopowder samples were assembled in flower-shaped undoped ZnO and pyramid-shaped Ce3+-doped ZnO nanostructures. The UV-vis spectra showed that the absorption edges shifted slightly to the longer wavelengths with the increase in the Ce3+ ions concentration. Moreover, the photoluminescence (PL) results showed a relative weak visible emission for the Ce3+-doped ZnO nanoparticles compared to the undoped ZnO. The effects of Ce3+-doping on the structure and PL of ZnO nanopowders are discussed in detail.

  3. Synthesis of Nanocrystalline SnOx (x = 1–2) Thin Film Using a Chemical Bath Deposition Method with Improved Deposition Time, Temperature and pH

    PubMed Central

    Ebrahimiasl, Saeideh; Yunus, Wan Md. Zin Wan; Kassim, Anuar; Zainal, Zulkarnain

    2011-01-01

    Nanocrystalline SnOx (x = 1–2) thin films were prepared on glass substrates by a simple chemical bath deposition method. Triethanolamine was used as complexing agent to decrease time and temperature of deposition and shift the pH of the solution to the noncorrosive region. The films were characterized for composition, surface morphology, structure and optical properties. X-ray diffraction analysis confirms that SnOx thin films consist of a polycrystalline structure with an average grain size of 36 nm. Atomic force microscopy studies show a uniform grain distribution without pinholes. The elemental composition was evaluated by energy dispersive X-ray spectroscopy. The average O/Sn atomic percentage ratio is 1.72. Band gap energy and optical transition were determined from optical absorbance data. The film was found to exhibit direct and indirect transitions in the visible spectrum with band gap values of about 3.9 and 3.7 eV, respectively. The optical transmittance in the visible region is 82%. The SnOx nanocrystals exhibit an ultraviolet emission band centered at 392 nm in the vicinity of the band edge, which is attributed to the well-known exciton transition in SnOx. Photosensitivity was detected in the positive region under illumination with white light. PMID:22163690

  4. Studies on growth and characterization of ternary CdS 1- xSe x alloy thin films deposited by chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Chaudhari, J. B.; Deshpande, N. G.; Gudage, Y. G.; Ghosh, A.; Huse, V. B.; Sharma, Ramphal

    2008-08-01

    Ternary alloyed CdS 1- xSe x thin films of variable composition ' x' were grown by the simple and economical chemical bath deposition technique. The as-grown thin films were characterized for structural, compositional, surface morphological, optical and electrical studies. The X-ray diffraction (XRD) patterns of the sample indicated that all the samples were polycrystalline in nature with hexagonal structure. Scanning electron microscopy (SEM) micrographs showed uniform morphology with spherical shaped grains distributed over entire glass substrate. EDAX studies confirmed that the CdS 1- xSe x films were having approximately same stoichiometry initially as well as finally. Room temperature optical measurements showed that band gap engineering could be realized in CdS 1- xSe x thin films via modulation in composition ' x'. Electrical resistivity of CdS 1- xSe x thin films for various compositions was found to be low. The broad and fine tunable band gap properties of ternary CdS 1- xSe x thin films have potential applications in opto-electronic devices.

  5. On the sub-band gap optical absorption in heat treated cadmium sulphide thin film deposited on glass by chemical bath deposition technique

    SciTech Connect

    Chattopadhyay, P.; Karim, B.; Guha Roy, S.

    2013-12-28

    The sub-band gap optical absorption in chemical bath deposited cadmium sulphide thin films annealed at different temperatures has been critically analyzed with special reference to Urbach relation. It has been found that the absorption co-efficient of the material in the sub-band gap region is nearly constant up to a certain critical value of the photon energy. However, as the photon energy exceeds the critical value, the absorption coefficient increases exponentially indicating the dominance of Urbach rule. The absorption coefficients in the constant absorption region and the Urbach region have been found to be sensitive to annealing temperature. A critical examination of the temperature dependence of the absorption coefficient indicates two different kinds of optical transitions to be operative in the sub-band gap region. After a careful analyses of SEM images, energy dispersive x-ray spectra, and the dc current-voltage characteristics, we conclude that the absorption spectra in the sub-band gap domain is possibly associated with optical transition processes involving deep levels and the grain boundary states of the material.

  6. Effect of deposition temperature on the structural and optical properties of CdSe thin films synthesised by chemical bath deposition

    SciTech Connect

    Mohammed, Mudhafer Ali

    2013-12-16

    Cadmium selenide thin films were synthesized on glass substrates using chemical bath technique (CBD) at temperatures 320K, 330K, 340K,and 350K. The polycrystalline nature of the material was confirmed by X-ray diffraction technique and various structural parameters such as lattice parameters, grain size, dislocation density, and micro strain. The root mean square (RMS) roughness was obtained by using atomic force microscopy(AFM), which indicated a decreasing average roughness with the decrease of the bath temperature. Optical properties were carried out by UV-Visible transmittance spectra, and the band gap energy was determined.

  7. A chemical bath deposition route to facet-controlled Ag3PO4 thin films with improved visible light photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Gunjakar, Jayavant L.; Jo, Yun Kyung; Kim, In Young; Lee, Jang Mee; Patil, Sharad B.; Pyun, Jae.-Chul.; Hwang, Seong-Ju

    2016-08-01

    A facile, economic, and reproducible chemical bath deposition (CBD) method is developed for the fabrication of facet-controlled Ag3PO4 thin films with enhanced visible light photocatalytic activity. The fine-control of bath temperature, precursor, complexing agent, substrate, and solution pH is fairly crucial in preparing the facet-selective thin film of Ag3PO4 nanocrystal. The change of precursor from silver nitrate to silver acetate makes possible the tailoring of the crystal shape of Ag3PO4 from cube to rhombic dodecahedron and also the bandgap tuning of the deposited films. The control of [Ag+]/[phosphate] ratio enables to maximize the loading amount of Ag3PO4 crystals per the unit area of the deposited film. All the fabricated Ag3PO4 thin films show high photocatalytic activity for visible light-induced degradation of organic molecules, which can be optimized by tailoring the crystal shape of the deposited crystals. This CBD method is also useful in preparing the facet-controlled hybrid film of Ag3PO4-ZnO photocatalyst. The present study clearly demonstrates the usefulness of the present CBD method for fabricating facet-controlled thin films of metal oxosalt and its nanohybrid.

  8. High-performance chemical-bath deposited CdS thin-film transistors with ZrO{sub 2} gate dielectric

    SciTech Connect

    Dondapati, Hareesh; Ha, Duc; Jenrette, Erin; Xiao, Bo; Pradhan, A. K.

    2014-08-04

    We demonstrate high performance chemical bath deposited CdS thin-film transistors (TFTs) using atomic layer deposited ZrO{sub 2} based high-k gate dielectric material. Our unique way of isolation of the CdS-based TFTs devices yielded significantly low leakage current as well as remarkable lower operating voltages (<5 V) which is four times smaller than the devices reported on CdS-based TFTs using SiO{sub 2} gate dielectric. Upon thermal annealing, the devices demonstrate even higher performance, including μ{sub FE} exceeding 4 ± 0.2 cm{sup 2} V{sup −1}S{sup −1}, threshold voltage V{sub T} of 3.8 V, and I{sub on-off} of 10{sup 4}–10{sup 5}, which hold much promise for applications in future electronic and optical devices.

  9. In Situ Localized Surface Plasmon Resonance (LSPR) Spectroscopy to Investigate Kinetics of Chemical Bath Deposition of CdS Thin Films

    SciTech Connect

    Kalyanaraman, Ramki; Taz, Humaira; Ruther, Rose E.; Nanda, Jagjit

    2015-02-11

    Techniques that can characterize the early stages of thin film deposition from liquid phase processes can aid greatly in our understanding of mechanistic aspects of chemical bath deposition (CBD). Here we have used localized surface plasmon resonance (LSPR) spectroscopy to monitor in-situ the kinetics of early-stage growth of cadmium sulfide (CdS) thin films on Ag nanoparticle on quartz substrates. Real-time shift during CdS deposition showed that the LSPR wavelength red shifted rapidly due to random deposition of CdS on the substrate, but saturated at longer times. LSPR modeling showed that these features could be interpreted as an initial deposition of CdS islands followed by preferential deposition onto itself. The CdS also showed significantly enhanced Raman signals up to 170 times due to surface enhanced raman scattering (SERS) from the CdS/Ag NP regions. The ex-situ SERS effect supported the LSPR shift suggesting that these techniques could be used to understand nucleation and growth phenomena from the liquid phase.

  10. In Situ Localized Surface Plasmon Resonance (LSPR) Spectroscopy to Investigate Kinetics of Chemical Bath Deposition of CdS Thin Films

    DOE PAGESBeta

    Kalyanaraman, Ramki; Taz, Humaira; Ruther, Rose E.; Nanda, Jagjit

    2015-02-11

    Techniques that can characterize the early stages of thin film deposition from liquid phase processes can aid greatly in our understanding of mechanistic aspects of chemical bath deposition (CBD). Here we have used localized surface plasmon resonance (LSPR) spectroscopy to monitor in-situ the kinetics of early-stage growth of cadmium sulfide (CdS) thin films on Ag nanoparticle on quartz substrates. Real-time shift during CdS deposition showed that the LSPR wavelength red shifted rapidly due to random deposition of CdS on the substrate, but saturated at longer times. LSPR modeling showed that these features could be interpreted as an initial deposition ofmore » CdS islands followed by preferential deposition onto itself. The CdS also showed significantly enhanced Raman signals up to 170 times due to surface enhanced raman scattering (SERS) from the CdS/Ag NP regions. The ex-situ SERS effect supported the LSPR shift suggesting that these techniques could be used to understand nucleation and growth phenomena from the liquid phase.« less

  11. Room temperature chemical bath deposition of cadmium selenide, cadmium sulfide and cadmium sulfoselenide thin films with novel nanostructures

    NASA Astrophysics Data System (ADS)

    VanderHyde, Cephas A.; Sartale, S. D.; Patil, Jayant M.; Ghoderao, Karuna P.; Sawant, Jitendra P.; Kale, Rohidas B.

    2015-10-01

    A simple, convenient and low cost chemical synthesis route has been used to deposit nanostructured cadmium sulfide, selenide and sulfoselenide thin films at room temperature. The films were deposited on glass substrates, using cadmium acetate as cadmium ion and sodium selenosulfate/thiourea as a selenium/sulfur ion sources. Aqueous ammonia was used as a complex reagent and also to adjust the pH of the final solution. The as-deposited films were uniform, well adherent to the glass substrate, specularly reflective and red/yellow in color depending on selenium and sulfur composition. The X-ray diffraction pattern of deposited cadmium selenide thin film revealed the nanocrystalline nature with cubic phase; cadmium sulfide revealed mixture of cubic along with hexagonal phase and cadmium sulfoselenide thin film were grown with purely hexagonal phase. The morphological observations revealed the growth and formation of interesting one, two and three-dimensional nanostructures. The band gap of thin films was calculated and the results are reported.

  12. Evolution of structural and optical properties of rutile TiO2 thin films synthesized at room temperature by chemical bath deposition method

    NASA Astrophysics Data System (ADS)

    Mayabadi, A. H.; Waman, V. S.; Kamble, M. M.; Ghosh, S. S.; Gabhale, B. B.; Rondiya, S. R.; Rokade, A. V.; Khadtare, S. S.; Sathe, V. G.; Pathan, H. M.; Gosavi, S. W.; Jadkar, S. R.

    2014-02-01

    Nanocrystalline thin films of TiO2 were prepared on glass substrates from an aqueous solution of TiCl3 and NH4OH at room temperature using the simple and cost-effective chemical bath deposition (CBD) method. The influence of deposition time on structural, morphological and optical properties was systematically investigated. TiO2 transition from a mixed anatase-rutile phase to a pure rutile phase was revealed by low-angle XRD and Raman spectroscopy. Rutile phase formation was confirmed by FTIR spectroscopy. Scanning electron micrographs revealed that the multigrain structure of as-deposited TiO2 thin films was completely converted into semi-spherical nanoparticles. Optical studies showed that rutile thin films had a high absorption coefficient and a direct bandgap. The optical bandgap decreased slightly (3.29-3.07 eV) with increasing deposition time. The ease of deposition of rutile thin films at low temperature is useful for the fabrication of extremely thin absorber (ETA) solar cells, dye-sensitized solar cells, and gas sensors.

  13. Optimization of the ZnS Buffer Layer by Chemical Bath Deposition for Cu(In,Ga)Se2 Solar Cells.

    PubMed

    Jeon, Dong-Hwan; Hwang, Dae-Kue; Kim, Dae-Hwan; Kang, Jin-Kyu; Lee, Chang-Seop

    2016-05-01

    We evaluated a ZnS buffer layer prepared using a chemical bath deposition (CBD) process for application in cadmium-free Cu(In,Ga)Se2 (CIGS) solar cells. The ZnS buffer layer showed good transmittance (above 90%) in the spectral range from 300 to 800 nm and was non-toxic compared with the CdS buffer layers normally used in CIGS solar cells. The CBD process was affected by several deposition conditions. The deposition rate was dependent on the ammonia concentration (complexing agent). When the ammonia concentration was either too high or low, a decrease in the deposition rate was observed. In addition, post heat treatments at high temperatures had detrimental influences on the ZnS buffer layers because portions of the ZnS thin films were transformed into ZnO. With optimized deposition conditions, a CIGS solar cell with a ZnS buffer layer showed an efficiency of 14.18% with a 0.23 cm2 active area under 100 mW/cm2 illumination. PMID:27483938

  14. Quantum-dot-sensitized solar cells: Assembly of CdS-quantum-dots coupling techniques of self-assembled monolayer and chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Lin, Sheng-Chih; Lee, Yuh-Lang; Chang, Chi-Hsiu; Shen, Yu-Jen; Yang, Yu-Min

    2007-04-01

    Two methods, coupling self-assembled monolayer and chemical bath deposition (CBD), were utilized to assemble cadmium sulfide (CdS) quantum dots (QDs) onto mesoporous TiO2 films for dye-sensitized solar cell (DSSC) applications. Colloidal CdS QDs were first self-assembled on the TiO2 surface. CBD was then introduced to replenish the incorporated amount and increase the coverage ratio of CdS QDs on the TiO2 surface. The preassembled CdS QDs act as nucleation sites in the CBD process, forming a CdS nanofilm with an interfacial structure capable of inhibiting the recombination of injected electrons. An efficiency as high as 1.35% for the QD-sensitized DSSC was achieved using the present strategy.

  15. Chemical bath deposition growth and characterization of zinc oxide nanostructures on plain and platinum-coated glass substrates for hydrogen peroxide gas sensor application

    NASA Astrophysics Data System (ADS)

    Jamasali, Y. D. J.; Alguno, A. C.

    2015-06-01

    Growth of zinc oxide on plain and Pt-coated glass substrate via chemical bath deposition technique (CBD) were studied. Aqueous solutions of ammonium hydroxide (NH4OH) and zinc sulfate (ZnSO4) were used as the precursor substances in the synthesis. Ultraviolet-visible spectroscopy (UV-Vis) was performed to determine the energy band gap and X-ray diffraction (XRD) to examine crystallinity. Sensitivity measurements were carried out in order to examine its potential to be fabricated as hydrogen peroxide (H2O2) gas sensor. Experimental results in the sensitivity experiment show that in the presence of H2O2 gas, the resistance of ZnOincrease which can be used as the basis for H2O-2 detection. UV-Vis showed variation of energy band gap values but were all near the generally accepted value. XRD spectra further verify that ZnOwere indeed synthesized.

  16. Chemical bath deposition of textured and compact zinc oxide thin films on vinyl-terminated polystyrene brushes

    PubMed Central

    Blumenstein, Nina J; Hofmeister, Caroline G; Lindemann, Peter; Huang, Cheng; Baier, Johannes; Leineweber, Andreas; Wöll, Christof; Schimmel, Thomas

    2016-01-01

    Summary In this study we investigated the influence of an organic polystyrene brush on the deposition of ZnO thin films under moderate conditions. On a non-modified SiOx surface, island growth is observed, whereas the polymer brush induces homogeneous film growth. A chemical modification of the polystyrene brushes during the mineralization process occurs, which enables stronger interaction between the then polar template and polar ZnO crystallites in solution. This may lead to oriented attachment of the crystallites so that the observed (002) texture arises. Characterization of the templates and the resulting ZnO films were performed with ζ-potential and contact angle measurements as well as scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). Infrared spectroscopy (IR) measurements were used to investigate the polystyrene brushes before and after modification. PMID:26925358

  17. Chemical bath deposition of textured and compact zinc oxide thin films on vinyl-terminated polystyrene brushes.

    PubMed

    Blumenstein, Nina J; Hofmeister, Caroline G; Lindemann, Peter; Huang, Cheng; Baier, Johannes; Leineweber, Andreas; Walheim, Stefan; Wöll, Christof; Schimmel, Thomas; Bill, Joachim

    2016-01-01

    In this study we investigated the influence of an organic polystyrene brush on the deposition of ZnO thin films under moderate conditions. On a non-modified SiO x surface, island growth is observed, whereas the polymer brush induces homogeneous film growth. A chemical modification of the polystyrene brushes during the mineralization process occurs, which enables stronger interaction between the then polar template and polar ZnO crystallites in solution. This may lead to oriented attachment of the crystallites so that the observed (002) texture arises. Characterization of the templates and the resulting ZnO films were performed with ζ-potential and contact angle measurements as well as scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). Infrared spectroscopy (IR) measurements were used to investigate the polystyrene brushes before and after modification. PMID:26925358

  18. Photovoltaic p-n structure of MoSb2‑xCuxSe4/CdS absorber films obtained via chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Vijila, J. J. J.; Mohanraj, K.; Sivakumar, G.

    2016-07-01

    In this work, a novel mixed metal chalcogenide MoSb2‑xCuxSe4 nanocrystalline thin film was deposited for different copper concentrations (x = 0.0 M, 0.1 M, 0.2 M & 0.3 M) on glass substrate by chemical bath deposition method at room temperature. XRD patterns revealed the incorporation of copper content by the conversion of orthorhombic Sb2Se3 into Cu3SbSe3 with a shift to lower angles. Average crystallite was found to be 69 nm, 17 nm, 10 nm and 9 nm for the deposited films. FTIR spectra confirm the presence of functional groups of Trisodium citrate (TSC) and the metal oxide vibrations. FESEM analysis depicted the morphological changes with the addition of Cu content. UV–vis analysis shows higher absorption in the visible region and the band gap values are found to be 2.16–1.76 eV. Hall effect analysis confirms the p-type nature of the material. The photo-current analysis shows higher photo-conversion efficiency of 1.86% for 0.3 M copper content.

  19. Triton-X mediated interconnected nanowalls network of cadmium sulfide thin films via chemical bath deposition and their photoelectrochemical performance

    NASA Astrophysics Data System (ADS)

    Vanalakar, S. A.; Mali, S. S.; Jo, E. A.; Kim, J. Y.; Kim, J. H.; Patil, P. S.

    2014-10-01

    Thin films of cadmium sulfide (CdS) have been wet chemically deposited onto fluorine-doped tin oxide (FTO) coated conducting glass substrates by using non-ionic surfactant; Triton-X 100. An aqueous solution contains cadmium sulphate as a cadmium and thiourea as sulphur precursor. Ammonia used as a complexing agent. The results of measurements of the x-ray diffraction, Raman spectroscopy, optical spectroscopy, energy dispersive spectroscopy, scanning electron microscopy, Brunauer Emmett Teller (BET) surface areas and atomic force microscopy were used for the characterization of the films. These results revealed that the films are polycrystalline, consisting of CdS cubic phase. The films show a direct band gap with energy 2.39 eV. The films show interconnected nanowalls like morphology with well-defined surface area. Finally, the photoelectrochemical (PEC) performance of Triton-X mediated CdS thin film samples were studied. The sample shows photoelectrochemical (PEC) performance with maximum short circuit current density (Jsc) 1.71 mA/cm2 for larger area (1 cm2) solar cells.

  20. Microstructure, optical and structural characterization of Cd0.98Fe0.02S thin films co-doped with Zn by chemical bath deposition method

    NASA Astrophysics Data System (ADS)

    Pitchaimani, K.; Amalraj, L.; Muthukumaran, S.

    2016-04-01

    Fe-doped CdS (Cd0.98Fe0.02S) and Fe, Zn co-doped CdS (Cd0.98-xZnxFe0.02S (x=0.02, 0.04, and 0.06)) thin films have been successfully deposited on glass substrate by chemical bath deposition technique using aqueous ammonia solution at pH = 9.5. Phase purity of the samples having cubic structure with (111) as the preferential orientation was confirmed by X-ray diffraction technique. Shift of X-ray diffraction peak position towards higher angle side and decrease of lattice parameters, volume and crystallite size confirmed the proper incorporation of Zn into Cd-Fe-S except Zn=6%. The compositional analysis (EDX) showed that Cd, Fe, Zn and S are present in the films. The enhanced band gap and higher transmittance observed in Cd0.94Zn0.04Fe0.02S films are the effective way to use solar energy and enhance its photocatalytic activity under visible light. The enhanced green band emission than blue band by Zn-doping evidenced the existence of higher defect states.

  1. Role of ZnO thin film in the vertically aligned growth of ZnO nanorods by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Son, Nguyen Thanh; Noh, Jin-Seo; Park, Sungho

    2016-08-01

    The effect of ZnO thin film on the growth of ZnO nanorods was investigated. ZnO thin films were sputter-deposited on Si substrate with varying the thickness. ZnO nanorods were grown on the thin film using a chemical bath deposition (CBD) method at 90 °C. The ZnO thin films showed granular structure and vertical roughness on the surface, which facilitated the vertical growth of ZnO nanorods. The average grain size and the surface roughness of ZnO film increased with an increase in film thickness, and this led to the increase in both the average diameter and the average length of vertically grown ZnO nanorods. In particular, it was found that the average diameter of ZnO nanorods was very close to the average grain size of ZnO thin film, confirming the role of ZnO film as a seed layer for the vertical growth of ZnO nanorods. The CBD growth on ZnO seed layers may provide a facile route to engineering vertically aligned ZnO nanorod arrays.

  2. Low-Temperature Growth of Well-Aligned ZnO Nanorod Arrays by Chemical Bath Deposition for Schottky Diode Application

    NASA Astrophysics Data System (ADS)

    Yuan, Zhaolin

    2015-04-01

    A well-aligned ZnO nanorod array (ZNRA) was successfully grown on an indium tin oxide (ITO) substrate by chemical bath deposition at low temperature. The morphology, crystalline structure, transmittance spectrum and photoluminescence spectrum of as-grown ZNRA were investigated by field emission scanning electron microscopy, x-ray diffraction, ultraviolet-visible spectroscopy and spectrophotometer, respectively. The results of these measurements showed that the ZNRA contained densely packed, aligned nanorods with diameters from 30 nm to 40 nm and a wurtzite structure. The ZNRA exhibited good optical transparency within the visible spectral range, with >80% transmission. Gold (Au) was deposited on top of the ZNRA, and the current-voltage characteristics of the resulting ITO/ZNRA/Au device in the dark were evaluated in detail. The ITO/ZNRA/Au device acted as a Schottky barrier diode with rectifying behaviour, low turn-on voltage (0.6 V), small reverse-bias saturation current (3.73 × 10-6 A), a high ideality factor (3.75), and a reasonable barrier height (0.65 V) between the ZNRA and Au.

  3. Fabrication and characterization of ZnO nanorods/p-6H-SiC heterojunction LED by microwave-assisted chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Hassan, J. J.; Mahdi, M. A.; Ramizy, Asmiet; Abu Hassan, H.; Hassan, Z.

    2013-01-01

    High-quality vertically aligned zinc oxide nanorods were successfully grown on p-type 6H-SiC substrate by microwave-assisted chemical bath deposition. The novel seed material poly(vinyl alcohol)-Zn(OH)2 nanocomposites was used to seed the 6H-SiC substrate. X-ray diffraction analysis and field emission scanning electron microscopy showed that the synthesized ZnO nanorods were vertically well aligned in the direction of the (0 0 2) plane of the hexagonal structure. The optical properties were examined by photoluminescence spectroscopy, which showed a high-intensity UV peak compared with visible defect peaks. The current-voltage property proved the good rectifier characteristic of the n-type ZnO nanorod/p-type SiC diode heterojunction. The electroluminescence emission of the heterojunction LED was sufficiently high to be seen with the naked eye, with a broad peak centered at the green part of the visible spectrum.

  4. Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1-x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells.

    PubMed

    Xu, Xiaojie; Bullock, James; Schelhas, Laura T; Stutz, Elias Z; Fonseca, Jose J; Hettick, Mark; Pool, Vanessa L; Tai, Kong Fai; Toney, Michael F; Fang, Xiaosheng; Javey, Ali; Wong, Lydia Helena; Ager, Joel W

    2016-03-01

    P-type transparent conducting films of nanocrystalline (CuS)x:(ZnS)1-x were synthesized by facile and low-cost chemical bath deposition. Wide angle X-ray scattering (WAXS) and high resolution transmission electron microscopy (HRTEM) were used to evaluate the nanocomposite structure, which consists of sub-5 nm crystallites of sphalerite ZnS and covellite CuS. Film transparency can be controlled by tuning the size of the nanocrystallites, which is achieved by adjusting the concentration of the complexing agent during growth; optimal films have optical transmission above 70% in the visible range of the spectrum. The hole conductivity increases with the fraction of the covellite phase and can be as high as 1000 S cm(-1), which is higher than most reported p-type transparent materials and approaches that of n-type transparent materials such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) synthesized at a similar temperature. Heterojunction p-(CuS)x:(ZnS)1-x/n-Si solar cells were fabricated with the nanocomposite film serving as a hole-selective contact. Under 1 sun illumination, an open circuit voltage of 535 mV was observed. This value compares favorably to other emerging heterojunction Si solar cells which use a low temperature process to fabricate the contact, such as single-walled carbon nanotube/Si (370-530 mV) and graphene/Si (360-552 mV). PMID:26855162

  5. Effect of band-aligned double absorber layers on photovoltaic characteristics of chemical bath deposited PbS/CdS thin film solar cells

    NASA Astrophysics Data System (ADS)

    Ho Yeon, Deuk; Chandra Mohanty, Bhaskar; Lee, Seung Min; Soo Cho, Yong

    2015-09-01

    Here we report the highest energy conversion efficiency and good stability of PbS thin film-based depleted heterojunction solar cells, not involving PbS quantum dots. The PbS thin films were grown by the low cost chemical bath deposition (CBD) process at relatively low temperatures. Compared to the quantum dot solar cells which require critical and multistep complex procedures for surface passivation, the present approach, leveraging the facile modulation of the optoelectronic properties of the PbS films by the CBD process, offers a simpler route for optimization of PbS-based solar cells. Through an architectural modification, wherein two band-aligned junctions are stacked without any intervening layers, an enhancement of conversion efficiency by as much as 30% from 3.10 to 4.03% facilitated by absorption of a wider range of solar spectrum has been obtained. As an added advantage of the low band gap PbS stacked over a wide gap PbS, the devices show stability over a period of 10 days.

  6. A highly porous NiO/polyaniline composite film prepared by combining chemical bath deposition and electro-polymerization and its electrochromic performance.

    PubMed

    Xia, X H; Tu, J P; Zhang, J; Wang, X L; Zhang, W K; Huang, H

    2008-11-19

    A highly porous NiO/polyaniline (PANI) composite film was prepared on ITO glass by combining the chemical bath deposition and electro-polymerization methods, successively. The porous NiO film acts as a template for the preferential growth of PANI along NiO flakes, and the NiO/PANI composite film has an intercrossing net-like morphology. The electrochromic performance of the NiO/PANI composite film was investigated in 1 M LiClO(4)+1 mM HClO(4)/propylene carbonate (PC) by means of transmittance, cyclic voltammetry (CV) and chronoamperometry (CA) measurements. The NiO/PANI thin film exhibits a noticeable electrochromism with reversible color changes from transparent yellow to purple and presents quite good transmittance modulation with a variation of transmittance up to 56% at 550 nm. The porous NiO/polyaniline (PANI) composite film also shows good reaction kinetics with fast switching speed, and the response time for oxidation and reduction is 90 and 110 ms, respectively. PMID:21836256

  7. A highly porous NiO/polyaniline composite film prepared by combining chemical bath deposition and electro-polymerization and its electrochromic performance

    NASA Astrophysics Data System (ADS)

    Xia, X. H.; Tu, J. P.; Zhang, J.; Wang, X. L.; Zhang, W. K.; Huang, H.

    2008-11-01

    A highly porous NiO/polyaniline (PANI) composite film was prepared on ITO glass by combining the chemical bath deposition and electro-polymerization methods, successively. The porous NiO film acts as a template for the preferential growth of PANI along NiO flakes, and the NiO/PANI composite film has an intercrossing net-like morphology. The electrochromic performance of the NiO/PANI composite film was investigated in 1 M LiClO4+1 mM HClO4/propylene carbonate (PC) by means of transmittance, cyclic voltammetry (CV) and chronoamperometry (CA) measurements. The NiO/PANI thin film exhibits a noticeable electrochromism with reversible color changes from transparent yellow to purple and presents quite good transmittance modulation with a variation of transmittance up to 56% at 550 nm. The porous NiO/polyaniline (PANI) composite film also shows good reaction kinetics with fast switching speed, and the response time for oxidation and reduction is 90 and 110 ms, respectively.

  8. Effect of band-aligned double absorber layers on photovoltaic characteristics of chemical bath deposited PbS/CdS thin film solar cells

    PubMed Central

    Ho Yeon, Deuk; Chandra Mohanty, Bhaskar; Lee, Seung Min; Soo Cho, Yong

    2015-01-01

    Here we report the highest energy conversion efficiency and good stability of PbS thin film-based depleted heterojunction solar cells, not involving PbS quantum dots. The PbS thin films were grown by the low cost chemical bath deposition (CBD) process at relatively low temperatures. Compared to the quantum dot solar cells which require critical and multistep complex procedures for surface passivation, the present approach, leveraging the facile modulation of the optoelectronic properties of the PbS films by the CBD process, offers a simpler route for optimization of PbS-based solar cells. Through an architectural modification, wherein two band-aligned junctions are stacked without any intervening layers, an enhancement of conversion efficiency by as much as 30% from 3.10 to 4.03% facilitated by absorption of a wider range of solar spectrum has been obtained. As an added advantage of the low band gap PbS stacked over a wide gap PbS, the devices show stability over a period of 10 days. PMID:26394761

  9. Preparation of highly photocatalytic active CdS/TiO2 nanocomposites by combining chemical bath deposition and microwave-assisted hydrothermal synthesis

    NASA Astrophysics Data System (ADS)

    Li, Li; Wang, Lili; Hu, Tianyu; Zhang, Wenzhi; Zhang, Xiuli; Chen, Xi

    2014-10-01

    CdS/TiO2 nanocomposites were prepared from Cd and Ti (1:1 M ratio) using cetyltrimethylammonium bromide by a two-step chemical bath deposition (CBD) and microwave-assisted hydrothermal synthesis (MAHS) method. A series of nanocomposites with different morphologies and activities were prepared by varying the reaction time in the MAHS (2, 4, and 6 h). The crystal structure, morphology, and surface physicochemical properties of the nanocomposites were characterized by X-ray diffraction, UV-visible diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and N2 adsorption-desorption measurements. The results show that the CdS/TiO2 nanocomposites were composed of anatase TiO2 and hexagonal CdS phases with strong absorption in the visible region. The surface morphologies changed slightly with increasing microwave irradiation time, while the Brunauer-Emmett-Teller surface area increased remarkably. The photocatalytic degradation of methyl orange (MO) was investigated under UV light and simulated sunlight irradiation. The photocatalytic activity of the CdS/TiO2 (6 h) composites prepared by the MAHS method was higher than those of CdS, P25, and other CdS/TiO2 nanocomposites. The CdS/TiO2 (6 h) nanocomposites significantly affected the UV and microwave-assisted photocatalytic degradation of different dyes. To elucidate the photocatalytic reaction mechanism for the CdS/TiO2 nanocomposites, controlled experiments were performed by adding different radical scavengers.

  10. Effect of deposition variables on properties of CBD ZnS thin films prepared in chemical bath of ZnSO4/SC(NH2)2/Na3C3H5O7/NH4OH

    NASA Astrophysics Data System (ADS)

    Liu, Wei-Long; Yang, Chang-Siao; Hsieh, Shu-Huei; Chen, Wen-Jauh; Fern, Chi-Lon

    2013-01-01

    The CBD ZnS thin films were prepared on substrates of soda lime glass in chemical bath. The effect of deposition variables including zinc sulfate, thiourea, tri-sodium citrate, ammoina water, bath temperature, and deposition time on the properties of CBD ZnS thin films were comprehensively studied. The CBD ZnS thin films were characterized by a field emission scanning electron microscope (FESEM) for the surface and cross section morphologies and thicknesses, an energy dispersive spectrometer equipped in FESEM for the atomic% of Zn and S, an ultraviolet-visible spectrometer (300-800 nm) for the transmittance and energy gap, and an atomic force microscope for the surface roughness. The results showed that the CBD ZnS thin films have a transmittance for ultraviolet-visible rays (300-800 nm) from 70.8 to 87.8%. The CBD ZnS thin films prepared in bath 5 have an energy gap from 3.881 to 3.980 eV. The CBD ZnS thin films prepared in bath 6 have a growth rate from 1.8 to 3.2 nm/min and activation energy of 59.8 kJ/mol for their growth.

  11. Enhancing the photovoltaic performance and stability of QDSSCs using surface reinforced Pt nanostructures with controllable morphology and superior electrocatalysis via cost-effective chemical bath deposition.

    PubMed

    Rao, S Srinivasa; Durga, Ikkurthi Kanaka; Kang, Tae-Su; Kim, Soo-Kyoung; Punnoose, Dinah; Gopi, Chandu V V M; Eswar Reddy, Araveeti; Krishna, T N V; Kim, Hee-Je

    2016-02-28

    To make quantum-dot sensitized solar cells (QDSSCs) competitive, photovoltaic parameters such as the power conversion efficiency (PCE) and fill factor (FF) must become comparable to those of other emerging solar cell technologies. In the present study, a novel strategy has been successfully developed for a highly efficient surface-modified platinum (Pt) counter electrode (CE) with high catalytic activity and long-term stability in a polysulfide redox electrolyte. The reinforcement of the Pt surface was performed using a thin passivating layer of CuS, NiS, or CoS by simple chemical bath deposition techniques. This method was a more efficient method for reducing the electron recombination in QDSSCs. The optimized Pt/CuS CE shows a very low charge transfer resistance of 37.01 Ω, which is an order of magnitude lower than those of bare Pt (86.32 Ω), Pt/NiS (53.83 Ω), and Pt/CoS (73.51 Ω) CEs. Therefore, the Pt/CuS CEs show much greater catalytic activity in the polysulfide redox electrolyte than Pt, Pt/NiS and Pt/CoS CEs. As a result, under one-sun illumination (AM 1.5G, 100 mW cm(-2)), the Pt/CuS CE exhibits a PCE of 4.32%, which is higher than the values of 1.77%, 2.95%, and 3.25% obtained with bare Pt, Pt/CoS, and Pt/NiS CEs, respectively. The performance of the Pt/CuS CE was enhanced by the improved current density, Cu vacancies with increased S composition, and surface morphology, which enable rapid electron transport and lower the electron recombination rate for the polysulfide electrolyte redox couple. Electrochemical impedance spectroscopy and Tafel polarization revealed that the hybrid CEs reduce interfacial recombination and exhibit better electrochemical and photovoltaic performance compared with a bare Pt CE. The Pt/CuS CE also shows superior stability in the polysulfide electrolyte in a working state for over 10 h, resulting in a long-term electrode stability than Pt CE. PMID:26796086

  12. Preparation of highly photocatalytic active CdS/TiO{sub 2} nanocomposites by combining chemical bath deposition and microwave-assisted hydrothermal synthesis

    SciTech Connect

    Li, Li; Wang, Lili; Hu, Tianyu; Zhang, Wenzhi; Zhang, Xiuli; Chen, Xi

    2014-10-15

    CdS/TiO{sub 2} nanocomposites were prepared from Cd and Ti (1:1 M ratio) using cetyltrimethylammonium bromide by a two-step chemical bath deposition (CBD) and microwave-assisted hydrothermal synthesis (MAHS) method. A series of nanocomposites with different morphologies and activities were prepared by varying the reaction time in the MAHS (2, 4, and 6 h). The crystal structure, morphology, and surface physicochemical properties of the nanocomposites were characterized by X-ray diffraction, UV–visible diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and N{sub 2} adsorption–desorption measurements. The results show that the CdS/TiO{sub 2} nanocomposites were composed of anatase TiO{sub 2} and hexagonal CdS phases with strong absorption in the visible region. The surface morphologies changed slightly with increasing microwave irradiation time, while the Brunauer–Emmett–Teller surface area increased remarkably. The photocatalytic degradation of methyl orange (MO) was investigated under UV light and simulated sunlight irradiation. The photocatalytic activity of the CdS/TiO{sub 2} (6 h) composites prepared by the MAHS method was higher than those of CdS, P25, and other CdS/TiO{sub 2} nanocomposites. The CdS/TiO{sub 2} (6 h) nanocomposites significantly affected the UV and microwave-assisted photocatalytic degradation of different dyes. To elucidate the photocatalytic reaction mechanism for the CdS/TiO{sub 2} nanocomposites, controlled experiments were performed by adding different radical scavengers. - Graphical abstract: CdS/TiO{sub 2} nanocomposites were prepared using CTAB by CBD combined with MAHS method. In addition, with increasing microwave irradiation time, the morphology of CdS/TiO{sub 2} changed from popcorn-like to wedge-like structure. - Highlights: • The CdS/TiO{sub 2} was prepared by CBD combined with MAHS two-step method under CTAB. • The morphologies of as-samples were different with the time of

  13. Effect of deposition parameters and strontium doping on characteristics of nanostructured ZnO thin film by chemical bath deposition method

    NASA Astrophysics Data System (ADS)

    Sheeba, N. H.; Naduvath, J.; Abraham, A.; Weiss, M. P.; Diener, Z. J.; Remillard, S. K.; DeYoung, P. A.; Philip, R. R.

    2014-10-01

    Polycrystalline thin films of ZnO and Sr-doped ZnO (ZnO:Sr) on ultrasonically cleaned soda lime glass substrates are synthesized through successive ionic layer adsorption and reaction. The XRD profiles of ZnO and ZnO:Sr films prepared at different number of deposition cycles exhibit hexagonal wurtzite structure with preferred orientation along (002) direction. The crystallites are found to be nano sized, having variation in size with the increase in number of depositions cycles and also with Sr doping. Optical absorbance studies reveal a systematically controllable blueshift in band gap of Sr-doped ZnO films. SEM images indicate enhanced assembling of crystallites to form elongated rods as number of dips increased in Sr doped ZnO. The films are found to be n-type with the Sr doping having little effect on the electrical properties.

  14. Effect of deposition parameters and strontium doping on characteristics of nanostructured ZnO thin film by chemical bath deposition method

    SciTech Connect

    Sheeba, N. H.; Naduvath, J.; Abraham, A. Philip, R. R.; Weiss, M. P. E-mail: zachary.diener@hope.edu E-mail: deyoung@hope.edu; Diener, Z. J. E-mail: zachary.diener@hope.edu E-mail: deyoung@hope.edu; Remillard, S. K. E-mail: zachary.diener@hope.edu E-mail: deyoung@hope.edu; DeYoung, P. A. E-mail: zachary.diener@hope.edu E-mail: deyoung@hope.edu

    2014-10-15

    Polycrystalline thin films of ZnO and Sr-doped ZnO (ZnO:Sr) on ultrasonically cleaned soda lime glass substrates are synthesized through successive ionic layer adsorption and reaction. The XRD profiles of ZnO and ZnO:Sr films prepared at different number of deposition cycles exhibit hexagonal wurtzite structure with preferred orientation along (002) direction. The crystallites are found to be nano sized, having variation in size with the increase in number of depositions cycles and also with Sr doping. Optical absorbance studies reveal a systematically controllable blueshift in band gap of Sr-doped ZnO films. SEM images indicate enhanced assembling of crystallites to form elongated rods as number of dips increased in Sr doped ZnO. The films are found to be n-type with the Sr doping having little effect on the electrical properties.

  15. Large-scale self-assembled epitaxial growth of highly-ordered three-dimensional micro/nano single-crystalline PbSe pyramid arrays by selective chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Qiu, Jijun; Weng, Binbin; Li, Lin; Li, Xiaomin; Shi, Zhisheng

    2015-05-01

    Highly ordered three-dimensional micro- and nano- PbSe pyramid arrays were synthesized by using selective epitaxial self-assembled chemical bath deposition method. Each pyramid consists of a very sharp (111) tip with six smooth equivalent {100} facets. Every (100) facet forms an angle of about 54.7° with respect to the (111) facet. The structural features including pyramidal size and period could be precisely tailored by pre-patterned Au mask and etching time. Pyramids are self-assembled on the confined positions by the dual functions of one-dimensional and two-dimensional oriented attachment mechanisms along [110] directions on the (111) surface, following the Gibbs-Curie-Wulff minimum energy principle. This method could effectively create large, bottom-up 3D pyramidal surface patterns in a cost-effective and time-saving manner, which has potential applications in infrared photoconductors, solar cells and light emitting enhancement for display, etc.

  16. Chemical bath deposition of ZnO nanowires at near-neutral pH conditions without hexamethylenetetramine (HMTA): understanding the role of HMTA in ZnO nanowire growth.

    PubMed

    McPeak, Kevin M; Le, Thinh P; Britton, Nathan G; Nickolov, Zhorro S; Elabd, Yossef A; Baxter, Jason B

    2011-04-01

    Chemical bath deposition (CBD) is an inexpensive and reproducible method for depositing ZnO nanowire arrays over large areas. The aqueous Zn(NO(3))(2)-hexamethylenetetramine (HMTA) chemistry is one of the most common CBD chemistries for ZnO nanowire synthesis, but some details of the reaction mechanism are still not well-understood. Here, we report the use of in situ attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy to study HMTA adsorption from aqueous solutions onto ZnO nanoparticle films and show that HMTA does not adsorb on ZnO. This result refutes earlier claims that the anisotropic morphology arises from HMTA adsorbing onto and capping the ZnO {10 1 0} faces. We conclude that the role of HMTA in the CBD of ZnO nanowires is only to control the saturation index of ZnO. Furthermore, we demonstrate the first deposition of ZnO nanowire arrays at 90 °C and near-neutral pH conditions without HMTA. Nanowires were grown using the pH buffer 2-(N-morpholino)ethanesulfonic acid (MES) and continuous titratation with KOH to maintain the same pH conditions where growth with HMTA occurs. This semi-batch synthetic method opens many new opportunities to tailor the ZnO morphology and properties by independently controlling temperature and pH. PMID:21361384

  17. Fabrication of ZnO nanorod/p-GaN high-brightness UV LED by microwave-assisted chemical bath deposition with Zn(OH)2-PVA nanocomposites as seed layer

    NASA Astrophysics Data System (ADS)

    Hassan, J. J.; Mahdi, M. A.; Yusof, Y.; Abu-Hassan, H.; Hassan, Z.; Al-Attar, H. A.; Monkman, A. P.

    2013-03-01

    Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer between the grown ZnO nanorods and substrate, which can interfere with light emission and extraction. Here we report the growth of high-quality, vertically aligned ZnO nanorods directly on a p-type GaN substrate, with no interface layer, by microwave-assisted chemical bath deposition using a polyvinyl alcohol (PVA)-Zn(OH)2 nanocomposites as the seed layer. X-ray diffraction and field-emission scanning electron microscopy confirmed the high quality of the nanorods in addition to the narrow and high-intensity UV peak of the photoluminescence spectrum. Three different filling insulator materials, poly methyl methacrylate (PMMA), SiO2, and PVA, were used to fabricate n-ZnO nanorod/p-GaN thin film LED structures. The electroluminescence (EL) properties for these three devices showed different emission peaks, which mainly originated from the recombination of free carriers at the two sides of the heterojunction. All devices showed excellent LED performance under forward and reverse bias; the PMMA device showed EL peaks in the UV-blue region, and the SiO2 device displayed EL peaks in the UV and green regions, respectively.

  18. A study on the structural and mechanical properties of nanocrystalline CuS thin films grown by chemical bath deposition technique

    SciTech Connect

    Mukherjee, Nillohit; Sinha, Arijit; Khan, Gobinda Gopal; Chandra, Debraj; Bhaumik, Asim; Mondal, Anup

    2011-01-15

    We report a chemical route for the deposition of nanocrystalline thin films of CuS, using aqueous solutions of Cu(CH{sub 3}COO){sub 2}, SC(NH{sub 2}){sub 2} and N(CH{sub 2}CH{sub 2}OH){sub 3} [triethanolamine, i.e. TEA] in proper concentrations and ratios. The films were structurally characterized using X-ray diffraction technique (XRD), field emission scanning electron microscopy (FESEM) and optical analysis [both photo luminescence (PL) and ultraviolet-visible (UV-vis)]. Optical studies showed a large blue shift in the band gap energy of the films due to quantum confinement effect exerted by the nanocrystals. From both XRD and FESEM analyses, formation of CuS nanocrystals with sizes within 10-15 nm was evident. A study on the mechanical properties was carried out using nanoindentation and nanoscratch techniques, which showed good mechanical stability and high adherence of the films with the bottom substrate. Such study on the mechanical properties of the CuS thin films is being reported here for the first time. Current-voltage (I-V) measurements were also carried out for the films, which showed p-type conductivity.

  19. Bathing

    MedlinePlus

    ... in the tub or shower. • Always check the water temperature before he or she gets in the tub ... to do, step by step. • Make sure the water temperature is comfortable. • Don’t use bath oil. It ...

  20. Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

    NASA Astrophysics Data System (ADS)

    Zhu, He-Jie; Liang, Yan; Gao, Xiao-Yong; Guo, Rui-Fang; Ji, Qiang-Min

    2015-06-01

    Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ˜ 35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.

  1. Characterization of ZnS thin films synthesized through a non-toxic precursors chemical bath

    SciTech Connect

    Rodríguez, C.A.; Sandoval-Paz, M.G.; Cabello, G.; Flores, M.; Fernández, H.; Carrasco, C.

    2014-12-15

    Highlights: • High quality ZnS thin films have been deposited by chemical bath deposition technique from a non-toxic precursor’s solution. • Nanocrystalline ZnS thin films with large band gap energy were synthesized without using ammonia. • Evidence that the growing of the thin films is carried out by means of hydroxide mechanism was found. • The properties of these ZnS thin films are similar and in some cases better than the corresponding ones produced using toxic precursors such as ammonia. - Abstract: In solar cells, ZnS window layer deposited by chemical bath technique can reach the highest conversion efficiency; however, precursors used in the process normally are materials highly volatile, toxic and harmful to the environment and health (typically ammonia and hydrazine). In this work the characterization of ZnS thin films deposited by chemical bath in a non-toxic alkaline solution is reported. The effect of deposition technique (growth in several times) on the properties of the ZnS thin film was studied. The films exhibited a high percentage of optical transmission (greater than 80%); as the deposition time increased a decreasing in the band gap values from 3.83 eV to 3.71 eV was observed. From chemical analysis, the presence of ZnS and Zn(OH){sub 2} was identified and X-ray diffraction patterns exhibited a clear peak corresponding to ZnS hexagonal phase (1 0 3) plane, which was confirmed by electron diffraction patterns. From morphological studies, compact samples with well-defined particles, low roughness, homogeneous and pinhole-free in the surface were observed. From obtained results, it is evident that deposits of ZnS–CBD using a non-toxic solution are suitable as window layer for TFSC.

  2. Synthesis of CuFeS2 thin films from acidic chemical baths

    NASA Astrophysics Data System (ADS)

    Tonpe, Dipak; Gattu, Ketan; More, Ganesh; Upadhye, Deepak; Mahajan, Sandip; Sharma, Ramphal

    2016-05-01

    The growth of Copper iron sulfide nanocrystalline thin films onto glass substrates has been achieved by chemical bath deposition at acidic values of pH. The deposited thin films were characterized for their optoelectronic properties using Raman, UV-Vis spectroscopy. The Raman analysis confirms the formation of CuFeS2 thin film. The thin film with nanosized crystallites of CuFeS2 showed a bandgap of 0.7eV from UV-vis absorption spectroscopy.

  3. Ammonia free growth of CdS thin films by Chemical Bath Technique

    NASA Astrophysics Data System (ADS)

    Jaber, A.; Alamri, S. N.; Aida, M. S.

    2011-10-01

    CdS thin films were deposited by a chemical bath deposition technique (CBD). The bath solution is composed of CdCl2 (0.1 M) salt as a source for Cd and thiourea (0.1M) as a source of sulphur (S). To avoid the toxicity and volatility of the commonly used ammonia, ethanolamine (ETA ) is used as complexing agent. Films were deposited with different times from 30 to 120 minutes in order to study the films growth mechanism. The solution temperature was fixed at 60°C. The structural and morphological films characterizations were carried by XRD analysis and AFM observations. From the XRD analysis we inferred that obtained CdS films have a pure hexagonal structure with the preferential orientation along the plane (101). The pure hexagonal structure is highly recommended for the realization of CdTe/ CdS or CuInSe/CdS solar cells. The presence of the hexagonal structure and the low growth rate in order of 1nm/min suggest that the growth mechanism is achieved through the ion by ion process. The optical characterization result indicates that the obtained films have a high transparency from 80 to 60 % in the visible range. In conclusion we inferred that CBD ammonia free CdS thin films deposition enables the production of films suitable for photovoltaic applications.

  4. Chemical Safety: Molten Salt Baths Cited as Lab Hazards.

    ERIC Educational Resources Information Center

    Baum, Rudy

    1982-01-01

    Discusses danger of explosions with molten salts baths, commonly used as heat-transfer media. One such explosion involved use of a bath containing 3-lb sodium nitrite and 1-lb potassium thiocyanate. Although most commercially available mixtures for heat transfer contain oxidizers, a reducer (thiocyanate) was included which possibly triggered the…

  5. Influence of coating bath chemistry on the deposition of 3-mercaptopropyl trimethoxysilane films deposited on magnesium alloy.

    PubMed

    Scott, A F; Gray-Munro, J E; Shepherd, J L

    2010-03-15

    Magnesium alloys have a low specific density and a high strength to weight ratio. This makes them sought after light weight construction materials for automotive and aerospace applications. These materials have also recently become of interest for biomedical applications. Unfortunately, the use of magnesium alloys in many applications has been limited due to its high susceptibility to corrosion. One way to improve the corrosion resistance of magnesium alloys is through the deposition of protective coatings. Many of the current pretreatments/coatings available use toxic chemicals such as chromates and hydrofluoric acid. One possible environmentally friendly alternative is organosilane coatings which have been shown to offer significant corrosion protection to both aluminum alloys and steels. Organosilanes are ambifunctional molecules that are capable of covalent bonding to metal hydroxide surfaces. In order for covalent bonding to occur, the organosilane must undergo hydrolysis in the coating bath followed by a condensation reaction with the surface. There are a number of factors that influence the rates of these reactions such as pH and concentration of reactants. These factors can also influence competing reactions in solution such as oligomerization. The rates of hydrolysis and condensation of 3-mercaptopropyltrimethoxy silane in methanol have been analyzed with (1)H NMR and ATR-FTIR. The results indicate that organosilane oligomers begin to form in solution before the molecules are fully hydrolyzed. The organosilane films deposited on magnesium alloy AZ91 at a variety of concentrations and pre-hydrolysis times were characterized with a combination of ATR-FTIR, ellipsometry and SEM/EDS. The results show that both organosilane film thickness and uniformity are affected by the chemistry occurring in the coating bath prior to deposition. PMID:20064643

  6. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

    1976-01-01

    A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.

  7. Chemical vapor deposition sciences

    SciTech Connect

    1992-12-31

    Chemical vapor deposition (CVD) is a widely used method for depositing thin films of a variety of materials. Applications of CVD range from the fabrication of microelectronic devices to the deposition of protective coatings. New CVD processes are increasingly complex, with stringent requirements that make it more difficult to commercialize them in a timely fashion. However, a clear understanding of the fundamental science underlying a CVD process, as expressed through computer models, can substantially shorten the time required for reactor and process development. Research scientists at Sandia use a wide range of experimental and theoretical techniques for investigating the science of CVD. Experimental tools include optical probes for gas-phase and surface processes, a range of surface analytic techniques, molecular beam methods for gas/surface kinetics, flow visualization techniques and state-of-the-art crystal growth reactors. The theoretical strategy uses a structured approach to describe the coupled gas-phase and gas-surface chemistry, fluid dynamics, heat and mass transfer of a CVD process. The software used to describe chemical reaction mechanisms is easily adapted to codes that model a variety of reactor geometries. Carefully chosen experiments provide critical information on the chemical species, gas temperatures and flows that are necessary for model development and validation. This brochure provides basic information on Sandia`s capabilities in the physical and chemical sciences of CVD and related materials processing technologies. It contains a brief description of the major scientific and technical capabilities of the CVD staff and facilities, and a brief discussion of the approach that the staff uses to advance the scientific understanding of CVD processes.

  8. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

    1976-01-01

    The chemical vapor deposition (CVD) method for the growth of Si sheet on inexpensive substrate materials is investigated. The objective is to develop CVD techniques for producing large areas of Si sheet on inexpensive substrate materials, with sheet properties suitable for fabricating solar cells meeting the technical goals of the Low Cost Silicon Solar Array Project. Specific areas covered include: (1) modification and test of existing CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using standard and near-standard processing techniques.

  9. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Campbell, A. G.; Johnson, R. E.; Kenty, J. L.; Moudy, L. A.; Shaw, G. L.; Simpson, W. I.; Yang, J. J.

    1978-01-01

    The objective was to investigate and develop chemical vapor deposition (CVD) techniques for the growth of large areas of Si sheet on inexpensive substrate materials, with resulting sheet properties suitable for fabricating solar cells that would meet the technical goals of the Low Cost Silicon Solar Array Project. The program involved six main technical tasks: (1) modification and test of an existing vertical-chamber CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using impurity diffusion and other standard and near-standard processing techniques supplemented late in the program by the in situ CVD growth of n(+)/p/p(+) sheet structures subsequently processed into experimental cells.

  10. Effect of Bath ph on Electroless Ni-P Coating Deposited on Open-Cell Aluminum Foams

    NASA Astrophysics Data System (ADS)

    Liu, Jiaan; Si, Fujian; Li, Dong; Liu, Yan; Cao, Zheng; Wang, Guoyong

    2015-09-01

    Different electroless Ni-P coatings were deposited on open-cell aluminum foams at various bath pH. The effect of bath pH on the morphology, structure, components, phases and corrosion resistance of the Ni-P coating was studied by scanning electron microscopy (SEM), confocal laser scanning microscope (CLSM), energy-dispersive spectroscopy (EDS), X-ray diffraction (XRD), immersion test and electrochemical polarization measurement, respectively. The experimental results show that the bath pH not only changed the reactivity of the bath, but also had a influence on the microstructure and anticorrosive property of electroless Ni-P coating. The high pH bath raises the thickness of Ni-P coating but decreases the content of phosphorus element in the Ni-P coating. The corrosion resistance of the coated aluminum foams increases when the bath pH rises.

  11. Dynamics of surface evolution in semiconductor thin films grown from a chemical bath.

    PubMed

    Gupta, Indu; Mohanty, Bhaskar Chandra

    2016-01-01

    Dynamics of surface evolution in CdS thin films grown by chemical bath deposition technique has been studied from time sequence of atomic force micrographs. Detailed scaling analysis of surface fluctuation in real and Fourier space yielded characteristic exponents αloc = 0.78 ± 0.07, α = 2.20 ± 0.08, αs = 1.49 ± 0.22, β = 0.86 ± 0.05 and βloc = 0.43 ± 0.10, which are very different from those predicted by the local growth models and are not related to any known universality classes. The observed anomalous scaling pattern, characterized by power law scaling dependence of interface width on deposition time differently at local and global scale, with rapid roughening of the growth front has been discussed to arise as a consequence of a nonlocal effect in the form of diffusional instability. PMID:27615367

  12. Structure of as-deposited and heat-treated iron-zinc coatings from chloride bath

    SciTech Connect

    Drewien, C.A.; Goldstein, J.I.; Marder, A.R.

    1993-09-01

    The iron content, phase constitution, and microstructure of electrodeposited iron-zinc alloy (EZA) coatings, deposited from chloride baths, is described for as-deposited and heat-treated conditions of coatings containing bulk iron contents of 6, 8, 10, and 13 w/o. The observed influence of current density upon iron content, which in turn influences the phase constitution and microstructure of the coatings, is reported. The microstructure, composed of non-equilibrium phases that have nanometer grain sizes, is illustrated and described with respect to iron content, crystallography, and morphology. As-deposited {eta} phase coatings undergo transformations through a sequence of metastable phases when heated. The sequence of phase transformations varies with iron content, but the mechanisms of phase transformation from the as-deposited eta phase to the metastable G phase was found to be similar in 6, 8, and 10 w/o Fe coatings. Microstructural, compositional, and crystallographic changes associated with this phase transformation are discussed.

  13. Effect of bath temperature on electrochemical properties of the anodically deposited manganese dioxide

    NASA Astrophysics Data System (ADS)

    Ghaemi, M.; Biglari, Z.; Binder, L.

    The effect of bath temperature on the electrochemical properties of electrolytic manganese dioxide (EMD) was studied. EMD was produced by anodic deposition from acidic aqueous solution of manganese sulfate at different bath temperatures in the range of 60-120°C. At temperatures above the boiling point of water, the electrolysis was carried out in an autoclave. The EMD produced at 120°C was of gamma type, identified by X-ray diffraction (XRD). Furthermore, the materials produced at 115 and 120°C were quality-controlled by cycling a sample as cathode mix in small size RAM-cells and by scanning electron microscopy. The results indicated an increase in cyclic charge/discharge performance and an improvement of crystallization conditions of EMD produced at elevated temperature when compared to data of commercially available γ-MnO 2.

  14. Continuous High-Aligned Polyacrylonitrile Electrospun Nanofibers Yarns via Circular Deposition on Water Bath.

    PubMed

    Bin, Yu; Hao, Yu; Zhu, Meifang; Wang, Hongzhi

    2016-06-01

    A novel strategy for preparing high-aligned continuous Polyacrylonitrile (PAN) electrospun nanofibers yarns is introduced. The yarn is rolled up from circular deposition, which can be changed by controlling the humidity of spinning environment. High-aligned yarn is obtained with the rolling speed of 57 m/min. Very few defects are found in the received yarn. Also the as-spun yarn is drawn in hot water bath to improve its mechanical properties further. The mechanical properties and X-Ray Diffraction (XRD) tests are systematically investigated. The tensile strength of the as-spun yarn rolled with 57 m/min can reach 240 MPa, close to that of as-spun fibers from wet spinning. Furthermore, after drawn of 5 ratios, tensile strength of yarn comes to 580 MPa, which broaden the applied fields of electrospun nanofibers. In addition, the forming mechanism of yarn in the water bath is analyzed and compared with the previous work. Actually, it can be testified experimentally that PAN nanofibers yarn has the same mechanical properties as that prepared with the other approaches with the same testing conditions in this work. The continuous high-aligned electrospun nanofibers PAN yarn via circular deposition in this paper is capable of meeting the requirement of the more applications needing of high mechanical properties and alignment degree. PMID:27427608

  15. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Johnson, R. E.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

    1976-01-01

    A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet.

  16. Simple Chemical Vapor Deposition Experiment

    ERIC Educational Resources Information Center

    Pedersen, Henrik

    2014-01-01

    Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

  17. Chemical vapor deposition of sialon

    DOEpatents

    Landingham, R.L.; Casey, A.W.

    A laminated composite and a method for forming the composite by chemical vapor deposition are described. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200/sup 0/C; and impinging a gas containing N/sub 2/, SiCl/sub 4/, and AlCl/sub 3/ on the surface.

  18. Electroless Plating of Palladium on Stainless Steel Substrates in Hydrazine Solutions: A Study of the Relationships Between Bath Parameters, Deposition Mechanisms, and Deposit Morphologies

    NASA Astrophysics Data System (ADS)

    Davis, Stacy

    Development of a reliable and inexpensive method for producing hydrogen permeable membranes is of intense interest to ongoing fuel cell research. This study investigated electroless plating of palladium onto stainless steel substrates in hydrazine solution as a possible means of membrane production. Following initial research to establish the optimum infiltrant particle size, sensitization time, and activation time, electroless plating experiments were performed to determine the effects of varying hydrazine concentration, agitation, and residence time on the palladium deposit quality and morphology. SEM examination of the experimental products elucidated relationships between specific plating bath parameters or combinations of parameters, the governing deposition mechanisms, and the deposit morphologies. The results indicate that it is possible to produce application-specific deposit layer morphologies by modifying the plating bath parameters at critical stages of the plating cycle.

  19. Chemical vapor deposition of sialon

    DOEpatents

    Landingham, Richard L.; Casey, Alton W.

    1982-01-01

    A laminated composite and a method for forming the composite by chemical vapor deposition. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200.degree. C.; and impinging a gas containing in a flowing atmosphere of air N.sub.2, SiCl.sub.4, and AlCl.sub.3 on the surface.

  20. Chemical surface deposition of ultra-thin semiconductors

    DOEpatents

    McCandless, Brian E.; Shafarman, William N.

    2003-03-25

    A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.

  1. Nanocrystalline hard chromium electrodeposition from trivalent chromium bath containing carbamide and formic acid: Structure, composition, electrochemical corrosion behavior, hardness and wear characteristics of deposits

    NASA Astrophysics Data System (ADS)

    Danilov, F. I.; Protsenko, V. S.; Gordiienko, V. O.; Kwon, S. C.; Lee, J. Y.; Kim, M.

    2011-07-01

    The paper is devoted to the structure, composition and properties investigations of coatings obtained from a sulfate trivalent chromium bath containing formic acid and carbamide as the complexing agents. The results indicate that the deposits have a nanocrystalline type of structure-there are regions with atomic ordered arrangement in bulk material with the average size of 3-5 nm. Carbon is present as chromium carbide within the coating and it is distributed uniformly inside of the deposit. The deposits under study exhibit particular electrochemical behavior (absence of the active dissolution range in acid solution). The hardness of these coatings does not differ noticeably from that typical of coatings obtained in Cr(VI)-based baths. The wear characteristics of the deposits from the proposed bath are somewhat better than in the case of a common hexavalent chromium bath.

  2. Chemically Deposited Thin-Film Solar Cell Materials

    NASA Technical Reports Server (NTRS)

    Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

    2005-01-01

    We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

  3. Flexural strength of acrylic resin repairs processed by different methods: water bath, microwave energy and chemical polymerization

    PubMed Central

    ARIOLI FILHO, João Neudenir; BUTIGNON, Luís Eduardo; PEREIRA, Rodrigo de Paula; LUCAS, Matheus Guilherme; MOLLO JUNIOR, Francisco de Assis

    2011-01-01

    Denture fractures are common in daily practice, causing inconvenience to the patient and to the dentists. Denture repairs should have adequate strength, dimensional stability and color match, and should be easily and quickly performed as well as relatively inexpensive. Objective The aim of this study was to evaluate the flexural strength of acrylic resin repairs processed by different methods: warm water-bath, microwave energy, and chemical polymerization. Material and methods Sixty rectangular specimens (31x10x2.5 mm) were made with warm water-bath acrylic resin (Lucitone 550) and grouped (15 specimens per group) according to the resin type used to make repair procedure: 1) specimens of warm water-bath resin (Lucitone 550) without repair (control group); 2) specimens of warm water-bath resin repaired with warm water-bath; 3) specimens of warm water-bath resin repaired with microwave resin (Acron MC); 4) specimens of warm water-bath resin repaired with autopolymerized acrylic resin (Simplex). Flexural strength was measured with the three-point bending in a universal testing machine (MTS 810 Material Test System) with load cell of 100 kgf under constant speed of 5 mm/min. Data were analyzed statistically by Kruskal-Wallis test (p<0.05). Results The control group showed the best result (156.04±1.82 MPa). Significant differences were found among repaired specimens and the results were decreasing as follows: group 3 (43.02±2.25 MPa), group 2 (36.21±1.20 MPa) and group 4 (6.74±0.85 MPa). Conclusion All repaired specimens demonstrated lower flexural strength than the control group. Repairs with autopolymerized acrylic resin showed the lowest flexural strength. PMID:21625742

  4. Chemical vapor deposition of epitaxial silicon

    DOEpatents

    Berkman, Samuel

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  5. Research and Analysis on the Physical and Chemical Properties of Molten Bath with Bottom-Blowing in EAF Steelmaking Process

    NASA Astrophysics Data System (ADS)

    Wei, Guangsheng; Zhu, Rong; Dong, Kai; Ma, Guohong; Cheng, Ting

    2016-06-01

    Bottom-blowing technology is widely adopted in electric arc furnace (EAF) steelmaking to promote the molten bath fluid flow, accelerate the metallurgical reaction, and improve the quality of molten steel. In this study, a water model experiment and a computational fluid dynamics model were established to investigate the effects of bottom-blowing gas flow rate on the fluid flow characteristics in the EAF molten bath. The results show that the interaction among the bottom-blowing gas streams influences the molten bath flow field, and increasing the bottom-blowing gas flow rate can accelerate the fluid flow and decrease the volume of the dead zone. Based on industrial application research, the physical and chemical properties of the molten bath with bottom-blowing were analyzed. Compared with traditional melting conditions without bottom-blowing, bottom-blowing technology demonstrates obvious advantages in promoting the heat transfer and metallurgical reactions in the molten bath. With the bottom-blowing arrangement, the dephosphorization and decarburization rates are accelerated, the contents of FeO and T. Fe in endpoint slag are decreased, and the endpoint carbon-oxygen equilibrium of molten steel is improved.

  6. Modeling the transport of organic chemicals between polyethylene passive samplers and water in finite and infinite bath conditions.

    PubMed

    Tcaciuc, A Patricia; Apell, Jennifer N; Gschwend, Philip M

    2015-12-01

    Understanding the transfer of chemicals between passive samplers and water is essential for their use as monitoring devices of organic contaminants in surface waters. By applying Fick's second law to diffusion through the polymer and an aqueous boundary layer, the authors derived a mathematical model for the uptake of chemicals into a passive sampler from water, in finite and infinite bath conditions. The finite bath model performed well when applied to laboratory observations of sorption into polyethylene (PE) sheets for various chemicals (polycyclic aromatic hydrocarbons, polychlorinated biphenyls [PCBs], and dichlorodiphenyltrichloroethane [DDT]) and at varying turbulence levels. The authors used the infinite bath model to infer fractional equilibration of PCB and DDT analytes in field-deployed PE, and the results were nearly identical to those obtained using the sampling rate model. However, further comparison of the model and the sampling rate model revealed that the exchange of chemicals was inconsistent with the sampling rate model for partially or fully membrane-controlled transfer, which would be expected in turbulent conditions or when targeting compounds with small polymer diffusivities and small partition coefficients (e.g., phenols, some pesticides, and others). The model can be applied to other polymers besides PE as well as other chemicals and in any transfer regime (membrane, mixed, or water boundary layer-controlled). Lastly, the authors illustrate practical applications of this model such as improving passive sampler design and understanding the kinetics of passive dosing experiments. PMID:26109238

  7. Laser Induced Chemical Liquid Phase Deposition (LCLD)

    SciTech Connect

    Nanai, Laszlo; Balint, Agneta M.

    2012-08-17

    Laser induced chemical deposition (LCLD) of metals onto different substrates attracts growing attention during the last decade. Deposition of metals onto the surface of dielectrics and semiconductors with help of laser beam allows the creation of conducting metal of very complex architecture even in 3D. In the processes examined the deposition occurs from solutions containing metal ions and reducing agents. The deposition happens in the region of surface irradiated by laser beam (micro reactors). Physics -chemical reactions driven by laser beam will be discussed for different metal-substrate systems. The electrical, optical, mechanical properties of created interfaces will be demonstrated also including some practical-industrial applications.

  8. Numerical modeling tools for chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Jasinski, Thomas J.; Childs, Edward P.

    1992-01-01

    Development of general numerical simulation tools for chemical vapor deposition (CVD) was the objective of this study. Physical models of important CVD phenomena were developed and implemented into the commercial computational fluid dynamics software FLUENT. The resulting software can address general geometries as well as the most important phenomena occurring with CVD reactors: fluid flow patterns, temperature and chemical species distribution, gas phase and surface deposition. The physical models are documented which are available and examples are provided of CVD simulation capabilities.

  9. Chemical vapor deposition of mullite coatings

    DOEpatents

    Sarin, Vinod; Mulpuri, Rao

    1998-01-01

    This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

  10. Occult chemical deposition to a Maritime forest

    SciTech Connect

    Vong, R.J.; Kowalski, A.S.

    1996-12-31

    Studies of chemical fluxes from the atmosphere to vegetated surfaces have suggested that, along with conventional wet and dry processes, an additional chemical input occurs when wind-blown cloud droplets are directly intercepted by vegetation. This cloud water deposition process has been sometimes termed {open_quote}occult deposition{close_quote} because the water fluxes cannot ordinarily be observed using rain gauges. Such occult deposition of cloud water has rarely been measured directly, in part because of the complexity of the governing turbulent transfer process. However, reviews by the National Acidic Precipitation Assessment Program (NAPAP SoS/T-2,6) have suggested that the chemical flux to be forest decline in the eastern USA. This paper presents direct field measurements occult chemical fluxes to a silver fir forest located in complex terrain on the Olympic Peninsula near the coast of Washington State, USA.

  11. Quantitative study on the chemical solution deposition of zinc oxysulfide

    SciTech Connect

    Reinisch, Michael; Perkins, Craig L.; Steirer, K. Xerxes

    2015-11-21

    Zinc Oxysulfide (ZnOS) has demonstrated potential in the last decade to replace CdS as a buffer layer material since it is a wide-band-gap semiconductor with performance advantages over CdS (Eg = 2.4 eV) in the near UV-range for solar energy conversion. However, questions remain on the growth mechanisms of chemical bath deposited ZnOS. In this study, a detailed model is employed to calculate solubility diagrams that describe simple conditions for complex speciation control using only ammonium hydroxide without additional base. For these conditions, ZnOS is deposited via aqueous solution deposition on a quartz crystal microbalance in a continuous flow cell. Data is used to analyze the growth rate dependence on temperature and also to elucidate the effects of dimethylsulfoxide (DMSO) when used as a co-solvent. Activation energies (EA) of ZnOS are calculated for different flow rates and solution compositions. As a result, the measured EA relationships are affected by changes in the primary growth mechanism when DMSO is included.

  12. Quantitative study on the chemical solution deposition of zinc oxysulfide

    DOE PAGESBeta

    Reinisch, Michael; Perkins, Craig L.; Steirer, K. Xerxes

    2015-11-21

    Zinc Oxysulfide (ZnOS) has demonstrated potential in the last decade to replace CdS as a buffer layer material since it is a wide-band-gap semiconductor with performance advantages over CdS (Eg = 2.4 eV) in the near UV-range for solar energy conversion. However, questions remain on the growth mechanisms of chemical bath deposited ZnOS. In this study, a detailed model is employed to calculate solubility diagrams that describe simple conditions for complex speciation control using only ammonium hydroxide without additional base. For these conditions, ZnOS is deposited via aqueous solution deposition on a quartz crystal microbalance in a continuous flow cell.more » Data is used to analyze the growth rate dependence on temperature and also to elucidate the effects of dimethylsulfoxide (DMSO) when used as a co-solvent. Activation energies (EA) of ZnOS are calculated for different flow rates and solution compositions. As a result, the measured EA relationships are affected by changes in the primary growth mechanism when DMSO is included.« less

  13. Chemical-Vapor-Deposited Diamond Film

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1999-01-01

    This chapter describes the nature of clean and contaminated diamond surfaces, Chemical-vapor-deposited (CVD) diamond film deposition technology, analytical techniques and the results of research on CVD diamond films, and the general properties of CVD diamond films. Further, it describes the friction and wear properties of CVD diamond films in the atmosphere, in a controlled nitrogen environment, and in an ultra-high-vacuum environment.

  14. Chemical effect on ozone deposition over seawater

    EPA Science Inventory

    Surface layer resistance plays an important role in determining ozone deposition velocity over seawater. Recent studies suggest that surface layer resistance over sea-water is influenced by wind-speed and chemical interaction at the air-water interface. Here, we investigate the e...

  15. Low-pressure, chemical vapor deposition polysilicon

    NASA Technical Reports Server (NTRS)

    Gallagher, B. D.; Crotty, G. C.

    1986-01-01

    The low-pressure chemical vapor deposition (LPCVD) of polycrystalline silicon was investigted. The physical system was described, as was the controlling process parameters and requirements for producing films for use as an integral portion of the solar cell contact system.

  16. Chemical vapor deposition coating for micromachines

    SciTech Connect

    MANI,SEETHAMBAL S.; FLEMING,JAMES G.; SNIEGOWSKI,JEFFRY J.; DE BOER,MAARTEN P.; IRWIN,LAWRENCE W.; WALRAVEN,JEREMY A.; TANNER,DANELLE M.; DUGGER,MICHAEL T.

    2000-04-21

    Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors will present a process used to selectively coat MEMS devices with tungsten using a CVD (Chemical Vapor Deposition) process. The selective W deposition process results in a very conformal coating and can potentially solve both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through silicon reduction of WF{sub 6}, which results in a self-limiting reaction. The selective deposition of W only on polysilicon surfaces prevents electrical shorts. Further, the self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. Selective tungsten is deposited after the removal of the sacrificial oxides to minimize process integration problems. This tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. Results from tungsten deposition on MEMS structures with dimples will be presented. The effect of wet and vapor phase cleanings prior to the deposition will be discussed along with other process details. The W coating improved wear by orders of magnitude compared to uncoated parts. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable.

  17. Chemical vapor deposition of group IIIB metals

    DOEpatents

    Erbil, A.

    1989-11-21

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

  18. Chemical vapor deposition of group IIIB metals

    DOEpatents

    Erbil, Ahmet

    1989-01-01

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.

  19. Chemical deposition methods using supercritical fluid solutions

    DOEpatents

    Sievers, Robert E.; Hansen, Brian N.

    1990-01-01

    A method for depositing a film of a desired material on a substrate comprises dissolving at least one reagent in a supercritical fluid comprising at least one solvent. Either the reagent is capable of reacting with or is a precursor of a compound capable of reacting with the solvent to form the desired product, or at least one additional reagent is included in the supercritical solution and is capable of reacting with or is a precursor of a compound capable of reacting with the first reagent or with a compound derived from the first reagent to form the desired material. The supercritical solution is expanded to produce a vapor or aerosol and a chemical reaction is induced in the vapor or aerosol so that a film of the desired material resulting from the chemical reaction is deposited on the substrate surface. In an alternate embodiment, the supercritical solution containing at least one reagent is expanded to produce a vapor or aerosol which is then mixed with a gas containing at least one additional reagent. A chemical reaction is induced in the resulting mixture so that a film of the desired material is deposited.

  20. Studies on Structural, Morphological and Optical Properties of Chemically Deposited CdS1-xSex Thin Films.

    PubMed

    Deo, Soumya R; Singh, Ajaya K; Deshmukh, Lata; Singh, Narendra Pratap; Aleksandrova, Mariya P

    2016-03-01

    The thin films of CdS1-xSex were successfully deposited over glass substrates by chemical bath deposition technique. Cadmium acetate, thiourea and sodium selenosulfate were used as source materials for Cd(2+), S(2-) and Se(2-) ions, while 2-mercaptoethanol was used as capping agent. The various deposition conditions such as precursor concentration, deposition temperature, pH and deposition time were optimized for the deposition of CdS1-xSex thin films of good quality and the films were annealed at 200° and 300 °C. The structural, morphological, chemical and optical properties were examined by various characterization techniques and discussed in detail. The optical band gap of CdS1-xSex thin film samples were estimated and found in the range from 2.11 to 1.79 eV for as-deposited and annealed thin films. PMID:26634707

  1. Advanced deposition model for thermal activated chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Cai, Dang

    Thermal Activated Chemical Vapor Deposition (TACVD) is defined as the formation of a stable solid product on a heated substrate surface from chemical reactions and/or dissociation of gaseous reactants in an activated environment. It has become an essential process for producing solid film, bulk material, coating, fibers, powders and monolithic components. Global market of CVD products has reached multi billions dollars for each year. In the recent years CVD process has been extensively used to manufacture semiconductors and other electronic components such as polysilicon, AlN and GaN. Extensive research effort has been directed to improve deposition quality and throughput. To obtain fast and high quality deposition, operational conditions such as temperature, pressure, fluid velocity and species concentration and geometry conditions such as source-substrate distance need to be well controlled in a CVD system. This thesis will focus on design of CVD processes through understanding the transport and reaction phenomena in the growth reactor. Since the in situ monitor is almost impossible for CVD reactor, many industrial resources have been expended to determine the optimum design by semi-empirical methods and trial-and-error procedures. This approach has allowed the achievement of improvements in the deposition sequence, but begins to show its limitations, as this method cannot always fulfill the more and more stringent specifications of the industry. To resolve this problem, numerical simulation is widely used in studying the growth techniques. The difficulty of numerical simulation of TACVD crystal growth process lies in the simulation of gas phase and surface reactions, especially the latter one, due to the fact that very limited kinetic information is available in the open literature. In this thesis, an advanced deposition model was developed to study the multi-component fluid flow, homogeneous gas phase reactions inside the reactor chamber, heterogeneous surface

  2. Physical-chemical conditions of ore deposition

    USGS Publications Warehouse

    Barton, P.B., Jr.

    1981-01-01

    Ore deposits form under a wide range of physical and chemical conditions, but those precipitating from hot, aqueous fluids-i.e. the hydrothermal deposits-form generally below 700??C and at pressures of only 1 or 2 kbar or less. Natural aqueous fluids in rocks may extract metal and sulfur from a variety of rock types or may acquire them as a residual heritage from a crystallizing silicate magma. Ore-forming hydrothermal fluids never appear as hot springs (except in deep, submarine situations) because they boil, mix with surface waters, and cool, thereby losing their ore-bearing ability before reaching the surface. Mineral systems function as chemical buffers and indicators just as buffers and indicators function in a chemical laboratory. By reading the record written in the buffer/indicator assemblages of minerals one can reconstruct many aspects of the former chemical environment. By studying the record of changing conditions one may deduce information regarding the processes functioning to create the succession of chemical environments and the ore deposits they represent. The example of the OH vein at Creede, Colorado, shows a pH buffered by the K-feldspar + muscovite + quartz assemblage and the covariation of S2 and O2 buffered by the assemblage chlorite + pyrite + quartz. Boiling of the ore fluid led to its oxidation to hematite-bearing assemblages and simultaneously produced an intensely altered, sericitic capping over the vein in response to the condensation of vapors bearing acidic components. The solubility of metals as calculated from experimental and theoretical studies of mineral solubility appears too low by at least one or two powers of ten to explain the mineralization at Creede. In contrast to Creede where the mineral stabilities all point to a relatively consistent chemistry, the Mississippi Valley type deposits present a puzzle of conflicting chemical clues that are impossible to reconcile with any single equilibrium situation. Thus we must

  3. Chemical weathering within high mountain depositional structures

    NASA Astrophysics Data System (ADS)

    Emberson, R.; Hovius, N.; Hsieh, M.; Galy, A.

    2013-12-01

    Material eroded from active mountain belts can spend extended periods in depositional structures within the mountain catchments before reaching its final destination. This can be in the form of colluvial fills, debris fans, or alluvial valley fills and terraces. The existence of these landforms is testament to the catastrophic nature of the events that lead to their formation. Sourced by landslides or debris flows, the material that forms them is in many cases either unweathered or incompletely weathered (e.g. Hsieh and Chyi 2010). Due to their porosity and permeability, these deposits likely serve as locations for extensive chemical weathering within bedrock landscapes. Recent studies considering the weathering flux from active mountain belts (e.g. Calmels et al. 2011) have distinguished between shallow and deep groundwater in terms of the contribution to the solute budget from a catchment; in this study we have attempted to more tightly constrain the sources of these groundwater components in the context of the previously mentioned depositional structures. We have collected water samples from a large number of sites within the Chen-you-lan catchment (370 km2) in central west Taiwan to elucidate the location of chemical weathering as well as how the sourcing of weathering products varies depending on the meteorological conditions. Central Taiwan has good attributes for this work considering both the extremely active tectonics and tropical climate, (including extensive cyclonic activity) which stimulate both extensive physical erosion (Dadson et al. 2003) and chemical weathering (Calmels et al. 2011). The Chen-you-lan catchment in particular contains some of the largest alluvial deposits inside the Taiwan mountain belt (Hsieh and Chyi 2010). Our preliminary results suggest that weathering within intramontane deposits may be a significant source of solutes, with the hyporheic systems within mountain rivers of particular import. This input of solutes occurs over

  4. Chemical vapor deposition of copper films

    NASA Astrophysics Data System (ADS)

    Borgharkar, Narendra Shamkant

    We have studied the kinetics of copper chemical vapor deposition (CVD) for interconnect metallization using hydrogen (Hsb2) reduction of the Cu(hfac)sb2 (copper(II) hexafluoroacetylacetonate) precursor. Steady-state deposition rates were measured using a hot-wall microbalance reactor. For base case conditions of 2 Torr Cu(hfac)sb2, 40 Torr Hsb2, and 300sp°C, a growth rate of 0.5 mg cmsp{-2} hrsp{-1} (ca. 10 nm minsp{-1}) is observed. Reaction order experiments suggest that the deposition rate passes through a maximum at partial pressure of 2 Torr of Cu(hfac)sb2. The deposition rate has an overall half-order dependence on Hsb2 partial pressure. A Langmuir-Hinshelwood rate expression is used to describe the observed kinetic dependencies on Cu(hfac)sb2, Hsb2, and H(hfac). Based on the rate expression a mechanism is proposed in which the overall rate is determined by the surface reaction of adsorbed Cu(hfac)sb2 and H species. Additionally, the role of alcohols in enhancing the deposition rate has been investigated. Addition of isopropanol results in a six fold enhancement to yield a deposition rate of 3.3 mg cmsp{-2} hrsp{-1} (ca. 60 nm minsp{-1}) at 5 Torr of isopropanol, 0.4 Torr Cu(hfac)sb2, 40 Torr Hsb2, and 300sp°C. Ethanol and methanol give lower enhancements of 1.75 and 1.1 mg cmsp{-2} hrsp{-1}, respectively. A mechanism based on the ordering of the aqueous pKsba values of the alcohols is proposed to explain the observed results. Lastly, we have built a warm-wall Pedestal reactor apparatus to demonstrate copper CVD on TiN/Si substrates. The apparatus includes a liquid injection system for transport of isopropanol-diluted precursor solutions. At optimized conditions of precursor and substrate pre-treatments, we have deposited uniform films of copper on TiN/Si substrates at an average deposition rate of 3.0 mg cmsp{-2} hrsp{-1} (ca. 60 nm minsp{-1}).

  5. Biocompatibility of chemical-vapour-deposited diamond.

    PubMed

    Tang, L; Tsai, C; Gerberich, W W; Kruckeberg, L; Kania, D R

    1995-04-01

    The biocompatibility of chemical-vapour-deposited (CVD) diamond surfaces has been assessed. Our results indicate that CVD diamond is as biocompatible as titanium (Ti) and 316 stainless steel (SS). First, the amount of adsorbed and 'denatured' fibrinogen on CVD diamond was very close to that of Ti and SS. Second, both in vitro and in vivo there appears to be less cellular adhesion and activation on the surface of CVD diamond surfaces compared to Ti and SS. This evident biocompatibility, coupled with the corrosion resistance and notable mechanical integrity of CVD diamond, suggests that diamond-coated surfaces may be highly desirable in a number of biomedical applications. PMID:7654876

  6. Preventing Chemical-Vapor Deposition In Selected Areas

    NASA Technical Reports Server (NTRS)

    Keeley, Joseph T.; Goela, Jitendra Singh; Pickering, Michael A.; Taylor, Raymond L.

    1991-01-01

    Method for prevention of chemical-vapor deposition of material in selected areas developed. Gas shroud isolates specific area from rest of deposition system. Inert gas flowing from beneath substrate prevents deposition between substrate and outer ring. Method extremely successful in selective deposition of SiC in chemical-vapor-deposition reactor. Used in deposition of SiC mirror blanks in Large Mirror Substrate and Lidar Mirror programs. Critical element in overall chemical-vapor-deposition process for producing large, lightweight mirrors.

  7. Chemically deposited cubic structured CdO thin films: Room temperature

    NASA Astrophysics Data System (ADS)

    Bulakhe, R. N.; Lokhande, C. D.

    2013-06-01

    Cadmium oxide (CdO) thin films have been synthesized using a chemical bath deposition (CBD) method at room temperature. The prepared CdO thin film were annealed and further used for the structural, morphological, UVVIS characterization. The thermo emf study was made with the TEP setup. The structural study showed polycrystalline CdO material. Morphological study reveals the prism like morphology. Optical and thermo emf study showed n-type nature with optical band gap of 2.13 eV.

  8. Synthesis and characterization of chemically deposited CdS thin films without toxic precursors.

    NASA Astrophysics Data System (ADS)

    Fernández-Pérez, A.; Sandoval-Paz, M. G.

    2016-05-01

    Al doped and undoped CdS thin films (CdS:Al) were deposited on glass, copper and bronze substrates by chemical bath deposition technique in an ammonia-free cadmium-sodium citrate system. The structural and optical properties of the CdS films were determined by X-ray diffraction (XRD), scanning electron microscope (SEM), and simultaneous transmission- reflection spectroscopy. It was found that the properties of the films depend on the amount of Al in the growth solutions and deposition time. The increase in Al content in the reaction solution led to a smaller crystallite size and higher energy band gap that varies in the range 2.42 eV - 2.59 eV depending on the Al content.

  9. Chemical Vapor Deposition Of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

    1993-01-01

    Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

  10. The effects of Mg2+, Mn2+, Zn2+, and Al3+ on the nickel deposit during electrowinning from sulfate bath

    NASA Astrophysics Data System (ADS)

    Gogia, S. K.; Das, S. C.

    1988-12-01

    The presence of impurities like Mg2+, Mn2+, Zn2+, and Al3+ during electrowinning of nickel shows several effects. The effects include current efficiency, deposit quality, purity, crystallographic orientation, surface morphology, and polarization behavior. Addition of the impurities did not change the current efficiency significantly but did change the quality and purity of the electrodeposited nickel. Based on the quality of the deposits obtained, the tolerance limits of these impurities in nickel bath were obtained. Although no deviation of nickel structure from fee was observed, the peak height values for different orientations changed with all of the impurities and the values varied with impurity concentration. The surface morphologies of electrodeposited nickel in the presence of impurities also showed changes. The potentiodynamic scan curves for nickel deposition showed deviations in the presence of all the impurities studied. Based on the results, an attempt was made to correlate the various effects.

  11. Characterization of Metalorganic Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Jesser, W. A.

    1998-01-01

    A series of experimental and numerical investigations to develop a more complete understanding of the reactive fluid dynamics of chemical vapor deposition were conducted. In the experimental phases of the effort, a horizontal CVD reactor configuration was used for the growth of InP at UVA and for laser velocimetry measurements of the flow fields in the reactor at LaRC. This horizontal reactor configuration was developed for the growth of III-V semiconductors and has been used by our research group in the past to study the deposition of both GaAs and InP. While the ultimate resolution of many of the heat and mass transport issues will require access to a reduced-gravity environment, the series of groundbased research makes direct contributions to this area while attempting to answer the design questions for future experiments of how low must gravity be reduced and for how long must this gravity level be maintained to make the necessary measurements. It is hoped that the terrestrial experiments will be useful for the design of future microgravity experiments which likely will be designed to employ a core set of measurements for applications in the microgravity environment such as HOLOC, the Fluid Physics/Dynamics Facility, or the Schlieren photography, the Laser Imaging Velocimetry and the Laser Doppler Velocimetry instruments under development for the Advanced Fluids Experiment Module.

  12. Surface chemical deposition of advanced electronic materials

    NASA Astrophysics Data System (ADS)

    Bjelkevig, Cameron

    The focus of this work was to examine the direct plating of Cu on Ru diffusion barriers for use in interconnect technology and the substrate mediated growth of graphene on boron nitride for use in advanced electronic applications. The electrodeposition of Cu on Ru(0001) and polycrystalline substrates (with and without pretreatment in an iodine containing solution) has been studied by cyclic voltammetry (CV), current--time transient measurements (CTT), in situ electrochemical atomic force microscopy (EC-AFM), and X-ray photoelectron spectroscopy (XPS). The EC-AFM data show that at potentials near the OPD/UPD threshold, Cu crystallites exhibit pronounced growth anisotropy, with lateral dimensions greatly exceeding vertical dimensions. XPS measurements confirmed the presence and stability of adsorbed I on the Ru surface following pre-treatment in a KI/H2SO4 solution and following polarization to at least -200 mV vs. Ag/AgCl. CV data of samples pre-reduced in I-containing electrolyte exhibited a narrow Cu deposition peak in the overpotential region and a UPD peak. The kinetics of the electrodeposited Cu films was investigated by CTT measurements and applied to theoretical models of nucleation. The data indicated that a protective I adlayer may be deposited on an airexposed Ru electrode as the oxide surface is electrochemically reduced, and that this layer will inhibit reformation of an oxide during the Cu electroplating process. A novel method for epitaxial graphene growth directly on a dielectric substrate of systematically variable thickness was studied. Mono/multilayers of BN(111) were grown on Ru(0001) by atomic layer deposition (ALD), exhibiting a flat (non-nanomesh) R30(✓3x✓3) structure. BN(111) was used as a template for growth of graphene by chemical vapor deposition (CVD) of C2H4 at 1000 K. Characterization by LEED, Auger, STM/STS and Raman indicate the graphene is in registry with the BN substrate, and exhibits a HOPG-like 0 eV bandgap density

  13. Survival of the faucet snail after chemical disinfection, pH extremes, and heated water bath treatments

    USGS Publications Warehouse

    Mitchell, A.J.; Cole, R.A.

    2008-01-01

    The faucet snail Bithynia tentaculata, a nonindigenous aquatic snail from Eurasia, was introduced into Lake Michigan in 1871 and has spread to the mid-Atlantic states, the Great Lakes region, Montana, and most recently, the Mississippi River. The faucet snail serves as intermediate host for several trematodes that have caused large-scale mortality among water birds, primarily in the Great Lakes region and Montana. It is important to limit the spread of the faucet snail; small fisheries equipment can serve as a method of snail distribution. Treatments with chemical disinfection, pH extremes, and heated water baths were tested to determine their effectiveness as a disinfectant for small fisheries equipment. Two treatments eliminated all test snails: (1) a 24-h exposure to Hydrothol 191 at a concentration of at least 20 mg/L and (2) a treatment with 50??C heated water for 1 min or longer. Faucet snails were highly resistant to ethanol, NaCl, formalin, Lysol, potassium permanganate, copper sulfate, Baquacil, Virkon, household bleach, and pH extremes (as low as 1 and as high as 13).

  14. Effects of Buffer Salt Concentration on the Dominated Deposition Mechanism and Optical Characteristics of Chemically Deposited Cadmium Sulfide Thin Films

    NASA Astrophysics Data System (ADS)

    Kakhaki, Z. Makhdoumi; Youzbashi, A.; Sangpour, P.; Kazemzadeh, A.; Naderi, N.; Bazargan, A. M.

    2016-02-01

    Effects of buffer salt concentration on the rate of deposition, dominated deposition mechanism and subsequently the structural, morphological, and optical properties of cadmium sulfide (CdS) thin films deposited by chemical bath deposition (CBD) on glass substrate were investigated. The precursors were chosen to be cadmium chloride (CdCl2) as the cadmium source, thiourea (CS(NH2)2) as the sulfur source, ammonium nitrate (NH4NO3) as the buffer salt and ammonia as the complexing agent and the pH controller. The influence of the NH4NO3 concentration on the structure, morphology, film uniformity, stoichiometry and optical properties of CdS thin films was also studied by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), energy dispersive X-ray (EDX) spectroscope, uv-visible and photoluminescence (PL) spectroscopes. The XRD studies revealed that all the deposited films exhibited a (002)h/(111)c preferred orientation. The crystallite size was increased from 20nm to 30nm by the increase of concentration of NH4NO3 from 0.5M to 2.5M. The morphology of CdS thin films were agglomerated spherical particles consisted of smaller particles. The surface of thin films deposited at the NH4NO3 concentration of 0.5M was compact and smooth. The increase of the concentration of NH4NO3 decreased the packing density of the films. The optical band gap was in the range of 2.25-2.4eV, which was decreased by the decrement of packing density. The PL spectra showed two peaks centered at 400nm and 500nm which are attributed to violet and band-to-band emissions, respectively.

  15. The chemical/physical and microbiological characteristics of typical bath and laundry waste waters. [waste water reclamation during manned space flight

    NASA Technical Reports Server (NTRS)

    Hypes, W. D.; Batten, C. E.; Wilkins, J. R.

    1974-01-01

    Chemical/physical and microbiological characteristics are studied of typical bath and laundry waters collected during a 12 day test in which the untreated waste waters were reused for toilet flush. Most significant changes were found for ammonia, color, methylene blue active substances, phosphates, sodium, sulfates, total organic carbon, total solids, and turbidity in comparison with tap water baseline. The mean total number of microorganisms detected in the waste waters ranged from 1 million to 10 to the 7th power cells/m1 and the mean number of possible coliforms ranged from 10 to the 5th power to 1 million. An accumulation of particulates and an objectible odor were detected in the tankage used during the 12 day reuse of the untreated waste waters. The combined bath and laundry waste waters from a family of four provided 91 percent of the toilet flush water for the same family.

  16. Elimination of a pollution associated with chromic acid during the electro-deposition of Cr(III) using appropriate anodic and membrane materials in a double film bath.

    PubMed

    Jiang, Xiaojun; Chen, Wenchao; Xu, Hongbo

    2009-01-01

    A method using trivalent chromium has been used to replace hexavalent chromium for the electro-deposition of chromium. Using a tri-chamber bath system various anodic materials and membranes were evaluated to minimize the production of environmentally and health damaging chromic acid. By measuring the absorbance of Cr(VI) at 640 nm, the results indicate that the use of a titanium plated ruthenium (Ti-Ru) anode produces the least amount of chromic acid byproduct compared to lead-gold alloy and graphite anodes. The concentration of Cr(VI) in the immediate vicinity of the Ti-Ru anode decreased from 0.389 mg/L to 0 during a 40-min deposition period. The use of a Nafion(TM) quaternary cation exchange membrane portioning the buffer and anode selectively prevented Cr(III) from entering the anode compartment whilst allowing the migration of H(+) to maintain overall voltaic continuity. It has been demonstrated that the use of a Ti-Ru anode with a Nafion(TM) membrane can eliminate the production of chromic acid associated with the electro-deposition of chromium plate thereby preventing its health damaging exposure to plant operators and preventing discharge of Cr(VI) into the environment. Addition of a surfactant improved current efficiency by 34.7%. PMID:25084432

  17. Chemical vapor deposition of graphene single crystals.

    PubMed

    Yan, Zheng; Peng, Zhiwei; Tour, James M

    2014-04-15

    As a two-dimensional (2D) sp(2)-bonded carbon allotrope, graphene has attracted enormous interest over the past decade due to its unique properties, such as ultrahigh electron mobility, uniform broadband optical absorption and high tensile strength. In the initial research, graphene was isolated from natural graphite, and limited to small sizes and low yields. Recently developed chemical vapor deposition (CVD) techniques have emerged as an important method for the scalable production of large-size and high-quality graphene for various applications. However, CVD-derived graphene is polycrystalline and demonstrates degraded properties induced by grain boundaries. Thus, the next critical step of graphene growth relies on the synthesis of large graphene single crystals. In this Account, we first discuss graphene grain boundaries and their influence on graphene's properties. Mechanical and electrical behaviors of CVD-derived polycrystalline graphene are greatly reduced when compared to that of exfoliated graphene. We then review four representative pathways of pretreating Cu substrates to make millimeter-sized monolayer graphene grains: electrochemical polishing and high-pressure annealing of Cu substrate, adding of additional Cu enclosures, melting and resolidfying Cu substrates, and oxygen-rich Cu substrates. Due to these pretreatments, the nucleation site density on Cu substrates is greatly reduced, resulting in hexagonal-shaped graphene grains that show increased grain domain size and comparable electrical properties as to exfoliated graphene. Also, the properties of graphene can be engineered by its shape, thickness and spatial structure. Thus, we further discuss recently developed methods of making graphene grains with special spatial structures, including snowflakes, six-lobed flowers, pyramids and hexagonal graphene onion rings. The fundamental growth mechanism and practical applications of these well-shaped graphene structures should be interesting topics and

  18. Chemically deposited CdS by an ammonia-free process for solar cells window layers

    SciTech Connect

    Ochoa-Landin, R.; Sastre-Hernandez, J.; Vigil-Galan, O.; Ramirez-Bon, R.

    2010-02-15

    Chemically deposited CdS window layers were studied on two different transparent conductive substrates, namely indium tin oxide (ITO) and fluorine doped tin oxide (FTO), to determine the influence of their properties on CdS/CdTe solar cells performance. Three types of CdS films obtained from different chemical bath deposition (CBD) processes were studied. The three CBD processes employed sodium citrate as the complexing agent in partial or full substitution of ammonia. The CdS films were studied by X-ray diffraction, optical transmission spectroscopy and atomic force microscopy. CdS/CdTe devices were completed by depositing 3 {mu}m thick CdTe absorbent layers by means of the close-spaced vapor transport technique (CSVT). Evaporated Cu-Au was used as the back contact in all the solar cells. Dark and under illumination J-V characteristic and quantum efficiency measurements were done on the CdS/CdTe devices to determine their conversion efficiency and spectral response. The efficiency of the cells depended on the window layer and on the transparent contact with values between 5.7% and 8.7%. (author)

  19. Chemical vapor deposition of aluminum oxide

    DOEpatents

    Gordon, Roy; Kramer, Keith; Liu, Xinye

    2000-01-01

    An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

  20. Chemical Vapor Deposition of Silicon from Silane Pyrolysis

    NASA Technical Reports Server (NTRS)

    Praturi, A. K.; Lutwack, R.; Hsu, G.

    1977-01-01

    The four basic elements in the chemical vapor deposition (CVD) of silicon from silane are analytically treated from a kinetic standpoint. These elements are mass transport of silane, pyrolysis of silane, nucleation of silicon, and silicon crystal growth. Rate expressions that describe the various steps involved in the chemical vapor deposition of silicon were derived from elementary principles. Applications of the rate expressions for modeling and simulation of the silicon CVD are discussed.

  1. Chemical vapor deposition for automatic processing of integrated circuits

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1980-01-01

    Chemical vapor deposition for automatic processing of integrated circuits including the wafer carrier and loading from a receiving air track into automatic furnaces and unloading on to a sending air track is discussed. Passivation using electron beam deposited quartz is also considered.

  2. Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

    NASA Astrophysics Data System (ADS)

    Chung, Ting Fung; Shen, Tian; Cao, Helin; Jauregui, Luis A.; Wu, Wei; Yu, Qingkai; Newell, David; Chen, Yong P.

    2013-04-01

    The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interest. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapor deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this paper, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapor deposition. We also discuss potential applications of such large-scale synthetic graphene.

  3. Chemical characterization of combustion deposits by TOF-SIMS

    NASA Astrophysics Data System (ADS)

    Sjövall, P.; Lausmaa, J.; Tullin, C.; Högberg, J.

    2003-01-01

    We have investigated the potential usefulness of TOF-SIMS for chemical analysis of deposits formed in combustion reactors. By using TOF-SIMS, it was possible to (i) identify inorganic chemical compounds in the deposits, (ii) semi-quantitatively estimate the relative concentrations of the main constituents and (iii) obtain images showing the lateral distribution of the main constituents, on the surface and in cross-sections of deposit samples. It was found that the main components in the deposit samples were KCl and K 2SO 4, while K 2CO 3, NaCl, Na 2SO 4, Ca(OH) 2 and CaCl 2 were present in smaller concentrations. In addition, deposits from combustion of recycled wood chips contained considerable amounts of ZnCl 2, PbCl 2, ZnO and PbO. Large variations in the chemical composition were observed for different samples and throughout the cross-section of a single sample. The chlorides, in particular NaCl, were present mainly as particles, while the sulfates were more homogeneously distributed in the deposit. The results from this study show that TOF-SIMS analysis of combustion deposits can contribute significantly to an increased understanding of the formation and growth of deposits in combustion reactors.

  4. Chemical Vapor Deposition of Turbine Thermal Barrier Coatings

    NASA Technical Reports Server (NTRS)

    Haven, Victor E.

    1999-01-01

    Ceramic thermal barrier coatings extend the operating temperature range of actively cooled gas turbine components, therefore increasing thermal efficiency. Performance and lifetime of existing ceram ic coatings are limited by spallation during heating and cooling cycles. Spallation of the ceramic is a function of its microstructure, which is determined by the deposition method. This research is investigating metalorganic chemical vapor deposition (MOCVD) of yttria stabilized zirconia to improve performance and reduce costs relative to electron beam physical vapor deposition. Coatings are deposited in an induction-heated, low-pressure reactor at 10 microns per hour. The coating's composition, structure, and response to the turbine environment will be characterized.

  5. Chemical vapor deposition of amorphous semiconductor films. Final subcontract report

    SciTech Connect

    Rocheleau, R.E.

    1984-12-01

    Chemical vapor deposition (CVD) from higher order silanes has been studied for fabricating amorphous hydrogenated silicon thin-film solar cells. Intrinsic and doped a-Si:H films were deposited in a reduced-pressure, tubular-flow reactor, using disilane feed-gas. Conditions for depositing intrinsic films at growth rates up to 10 A/s were identified. Electrical and optical properties, including dark conductivity, photoconductivity, activation energy, optical absorption, band-gap and sub-band-gap absorption properties of CVD intrinsic material were characterized. Parameter space for depositing intrinsic and doped films, suitable for device analysis, was identified.

  6. Light-induced chemical vapour deposition painting with titanium dioxide

    NASA Astrophysics Data System (ADS)

    Halary-Wagner, E.; Bret, T.; Hoffmann, P.

    2003-03-01

    Light-induced chemical vapour deposits of titanium dioxide are obtained from titanium tetra-isopropoxide (TTIP) in an oxygen and nitrogen atmosphere with a long pulse (250 ns) 308 nm XeCl excimer laser using a mask projection set-up. The demonstrated advantages of this technique are: (i) selective area deposition, (ii) precise control of the deposited thickness and (iii) low temperature deposition, enabling to use a wide range of substrates. A revolving mask system enables, in a single reactor load, to deposit shapes of controlled heights, which overlap to build up a complex pattern. Interferential multi-coloured deposits are achieved, and the process limitations (available colours and resolution) are discussed.

  7. Noncyanide cadmium plating baths. Final report

    SciTech Connect

    Pearlstein, F.; Agarwala, V.S.

    1991-10-04

    One approach to minimizing toxic wastes is to eliminate the use of cyanide plating baths. Non-cyanide zinc plating baths have been successfully developed and have found widespread use. An investigation was conducted in an attempt to accomplish similar results with cadmium plating baths. The focus of this study was on additives to a near neutral cadmium bath, free of complexing agents. A Hull cell was used to enable visualization of deposits over a broad range of cathode current densities. Experimental design (Taguchi Method) was used to optimize bath parameters and constituent concentrations. Bath parameters have been developed which indicate promise for producing dense deposits with good covering power, and relatively low tendency for hydrogen embrittlement.

  8. Bubble bath soap poisoning

    MedlinePlus

    ... medlineplus.gov/ency/article/002762.htm Bubble bath soap poisoning To use the sharing features on this page, please enable JavaScript. Bubble bath soap poisoning occurs when someone swallows bubble bath soap. ...

  9. Chemical vapor deposition of boron-doped hydrogenated amorphous silicon

    SciTech Connect

    Ellis F.B. Jr.; Delahoy, A.E.

    1985-07-15

    Deposition conditions and film properties for a variety of boron-doped hydrogenated amorphous silicon films and silicon-carbon films produced by chemical vapor deposition (CVD) are discussed. Deposition gases include monosilane, disilane, trisilane, and acetylene. Two types of optically wide band-gap p layers are obtained. One of these window p layers (without carbon) has been extensively tested in photovoltaic devices. Remarkably, this p layer can be deposited between about 200 to 300 /sup 0/C. A typical open circuit voltage in an all CVD p-i-n device is 0.70--0.72 V, and in a hybrid device where the i and n layers are deposited by glow discharge, 0.8--0.83 V.

  10. Chemical vapor deposition reactor. [providing uniform film thickness

    NASA Technical Reports Server (NTRS)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  11. Chemical vapor deposition modeling: An assessment of current status

    NASA Technical Reports Server (NTRS)

    Gokoglu, Suleyman A.

    1991-01-01

    The shortcomings of earlier approaches that assumed thermochemical equilibrium and used chemical vapor deposition (CVD) phase diagrams are pointed out. Significant advancements in predictive capabilities due to recent computational developments, especially those for deposition rates controlled by gas phase mass transport, are demonstrated. The importance of using the proper boundary conditions is stressed, and the availability and reliability of gas phase and surface chemical kinetic information are emphasized as the most limiting factors. Future directions for CVD are proposed on the basis of current needs for efficient and effective progress in CVD process design and optimization.

  12. [Chemical composition of deposits on IUD removed from uterus].

    PubMed

    Liu, T Y

    1984-05-01

    An electroprobe is used to analyze the elements and x-ray diffraction technology to determine the crystal structure of deposits on IUDs removed from the uterus, so that the chemical composition of these deposits may be studied. Deposits on a number of copper or stainless steel IUDs are removed and undergo electroprobe analysis, the results of which are compare dwith the results of calcite analysis done using the same method. Several deposit samples are studied using x-ray diffraction technology. The results of the latter study are compared with the results of the x-ray diffraction studies of calcium carbonate and calcite. Both copper and stainless steel IUDs were found to have the same type of deposits, containing traces of cooper, magnesium, potassium, sodium, iron, sulphur, phosphorus, and chlorine. The x-ray diffraction spectrum for these deposits was found to be the same as those of calcium carbonate and calcite (hexagonal crystal). Deposits on stainless steel and copper IUDs were found to be similar to calcite. With the exception of calcium, the other elements are thought to come from amino acid, which is readily combined with calcium carbonate in the uterus. These findings confirm the fact that IUDs cause the presence of more calcium ions in th uterus. 120 copper IUDs place in the uterus from 1 to 7 years and 156 stainless steel IUDs placed in the uterus from 1 month to 19 years were used. The volume of the deposits was so small that electroprobing was the only method which could accurately determine all the chemical elements these deposits contained. PMID:12313205

  13. Chemical vapor deposition of graphene on copper at reduced temperatures

    NASA Astrophysics Data System (ADS)

    Gallo, Eric M.; Willner, Bruce I.; Hwang, Jeonghyun; Sun, Shangzhu; Spencer, Michael; Salagaj, Tom; Mitchel, William C.; Sbrockey, Nick; Tompa, Gary S.

    2012-09-01

    A preliminary study on reduced temperature chemical vapor deposition of graphene on copper substrates was performed. Graphene's exceptional mechanical strength, very high electrical and thermal conductivity, and stability at atomic layer thicknesses, generates potential for a broad range of applications, from nanodevices to transparent conductor to chemical sensor. Of the techniques demonstrated for graphene formation, chemical vapor deposition is the sole process suitable for manufacturing large area films. While large area film deposition of graphene has been shown on metal substrates, this process has been limited to high temperatures, 900-1000C, which increases the cost of production and limits methods of integrating the graphene with other material structures. In this work, CVD of graphene on copper foil was attempted over a range of temperatures (650 - 950C) on substrates as large as 5 x 15 cm in a horizontal tube reactor. Depositions were performed using both CVD and upstream Plasma-Enhanced CVD (PECVD), and the results are compared for both techniques. Quality of graphene films deposited with and without plasma enhancement was characterized by micro Raman spectroscopy.

  14. Finite-Size Bath in Qubit Thermodynamics

    NASA Astrophysics Data System (ADS)

    Pekola, J. P.; Suomela, S.; Galperin, Y. M.

    2016-09-01

    We discuss a qubit weakly coupled to a finite-size heat bath (calorimeter) from the point of view of quantum thermodynamics. The energy deposited to this environment together with the state of the qubit provides a basis to analyze the heat and work statistics of this closed combined system. We present results on two representative models, where the bath is composed of two-level systems or harmonic oscillators, respectively. Finally, we derive results for an open quantum system composed of the above qubit plus finite-size bath, but now the latter is coupled to a practically infinite bath of the same nature of oscillators or two-level systems.

  15. Finite-Size Bath in Qubit Thermodynamics

    NASA Astrophysics Data System (ADS)

    Pekola, J. P.; Suomela, S.; Galperin, Y. M.

    2016-04-01

    We discuss a qubit weakly coupled to a finite-size heat bath (calorimeter) from the point of view of quantum thermodynamics. The energy deposited to this environment together with the state of the qubit provides a basis to analyze the heat and work statistics of this closed combined system. We present results on two representative models, where the bath is composed of two-level systems or harmonic oscillators, respectively. Finally, we derive results for an open quantum system composed of the above qubit plus finite-size bath, but now the latter is coupled to a practically infinite bath of the same nature of oscillators or two-level systems.

  16. Chemical-vapor deposition of silicon from silane

    NASA Technical Reports Server (NTRS)

    Hsu, G. C.; Lutwack, R.; Praturi, A. K.

    1979-01-01

    Report lists tables of standard free-energy change, equilibrium constant, and heat of reaction for chemical vapor deposition (CVD) of silicon from silane over temperature range of 100 to 1000 K. Data indicates silicon CVD may be a commercially economical process for production of silicon for solar arrays and other applications.

  17. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  18. A model of silicon carbide chemical vapor deposition

    SciTech Connect

    Allendorf, M.D.; Kee, R.J. )

    1991-03-01

    This paper presents a model describing the interacting gas phase and surface chemistry present during the steady-state chemical vapor deposition (CVD) of silicon carbide (SiC). In this work, the authors treat the case of steady-state deposition of SiC from silane (SiH{sub 4}) and propane (C{sub 3}H{sub 8}) mixtures in hydrogen carrier gas at one atmosphere pressure. Epitaxial deposition is assumed to occur on a pre-existing epitaxial silicon carbide crystal. Pyrolysis of SiH{sub 4} and C{sub 3}H{sub 8} is modeled by 83 elementary gas-phase reactions. A set of 36 reactions of gas- phase species with the surface is used to simulate the deposition process. Rates for the gas/surface reactions were obtained from experimental measurements of sticking coefficients in the literature and theoretical estimates. The authors' results represent the first simulation of a silicon carbide deposition process that includes detailed description of both the gas phase and surface reactions. The chemical reaction mechanism is also combined with a model of a rotating disk reactor (RDR), which is a convenient way to study the interaction of chemical reactions with fluid mechanics. Transport of species from the gas to the surface is accounted for using multicomponent transport properties. Predictions of deposition rates as a function of susceptor temperature, disk rotation rate, and reactant partial pressure are presented. In addition, velocity, temperature, and concentration profiles normal to the heated disk for 41 gas-phase species are determined using reactor conditions typical of epitaxial silicon carbide deposition on silicon substrates.

  19. Chemical vapour deposition of zeolitic imidazolate framework thin films

    NASA Astrophysics Data System (ADS)

    Stassen, Ivo; Styles, Mark; Grenci, Gianluca; Gorp, Hans Van; Vanderlinden, Willem; Feyter, Steven De; Falcaro, Paolo; Vos, Dirk De; Vereecken, Philippe; Ameloot, Rob

    2016-03-01

    Integrating metal-organic frameworks (MOFs) in microelectronics has disruptive potential because of the unique properties of these microporous crystalline materials. Suitable film deposition methods are crucial to leverage MOFs in this field. Conventional solvent-based procedures, typically adapted from powder preparation routes, are incompatible with nanofabrication because of corrosion and contamination risks. We demonstrate a chemical vapour deposition process (MOF-CVD) that enables high-quality films of ZIF-8, a prototypical MOF material, with a uniform and controlled thickness, even on high-aspect-ratio features. Furthermore, we demonstrate how MOF-CVD enables previously inaccessible routes such as lift-off patterning and depositing MOF films on fragile features. The compatibility of MOF-CVD with existing infrastructure, both in research and production facilities, will greatly facilitate MOF integration in microelectronics. MOF-CVD is the first vapour-phase deposition method for any type of microporous crystalline network solid and marks a milestone in processing such materials.

  20. Modified chemical route for deposition of molybdenum disulphide thin films

    SciTech Connect

    Vyas, Akshay N. Sartale, S. D.

    2014-04-24

    Molybdenum disulphide (MoS{sub 2}) thin films were deposited on quartz substrates using a modified chemical route. Sodium molybdate and sodium sulphide were used as precursors for molybdenum and sulphur respectively. The route involves formation of tetrathiomolybdate ions (MoS{sub 4}{sup 2−}) and further reduction by sodium borohydride to form MoS{sub 2}. The deposition was performed at room temperature. The deposited films were annealed in argon atmosphere at 1073 K for 1 hour to improve its crystallinity. The deposited films were characterized using scanning electron microscopy (SEM) for morphology, UV-Vis absorption spectroscopy for optical studies and X-ray diffraction (XRD) for structure determination.

  1. Chemically deposited thin films of sulfides and selenides of antimony and bismuth as solar energy materials

    NASA Astrophysics Data System (ADS)

    Nair, M. T.; Nair, Padmanabhan K.; Garcia, V. M.; Pena, Y.; Arenas, O. L.; Garcia, J. C.; Gomez-Daza, O.

    1997-10-01

    Chemical bath deposition techniques for bismuth sulfide, bismuth selenide, antimony sulfide, and antimony selenide thin films of about 0.20 - 0.25 micrometer thickness are reported. All these materials may be considered as solar absorber films: strong optical absorption edges, with absorption coefficient, (alpha) , greater than 104 cm-1, are located at 1.31 eV for Bi2Se3, 1.33 eV for Bi2S3, 1.8 eV for Sb2S3, and 1.35 eV for Sb2Se3. As deposited, all the films are nearly amorphous. However, well defined crystalline peaks matching bismuthinite (JCPDS 17- 0320), paraguanajuatite (JCPDS 33-0214), and stibnite (JCPDS 6-0474) and antimony selenide (JCPDS 15-0861) for Bi2S3, Bi2Se3, Sb2S3 and Sb2Se3 respectively, are observed when the films are annealed in nitrogen at 300 degrees Celsius. This is accompanied by a substantial modification of the electrical conductivity in the films: from 10-7 (Omega) -1 cm-1 (in as prepared films) to 10 (Omega) -1 cm-1 in the case of bismuth sulfide and selenide films, and enhancement of photosensitivity in the case of antimony sulfide films. The chemical deposition of a CuS/CuxSe film on these Vx- VIy films and subsequent annealing at 300 degrees Celsius for 1 h at 1 torr of nitrogen leads to the formation of p-type films (conductivity of 1 - 100 (Omega) -1 cm-1) of multinary composition. Among these, the formation of Cu3BiS3 (JCPDS 9-0488) and Cu3SbS4 (JCPDS 35- 0581), CuSbS2 (JCPDS 35-0413) have been clearly detected. Solar energy applications of these films are suggested.

  2. Chemical vapor deposition and atomic layer deposition of metal oxide and nitride thin films

    NASA Astrophysics Data System (ADS)

    Barton, Jeffrey Thomas

    Processes for depositing thin films with various electronic, optical, mechanical, and chemical properties are indispensable in many industries today. Of the many deposition methods available, chemical vapor deposition (CVD) has proved over time to be one of the most flexible, efficient, and cost-effective. Atomic layer deposition (ALD) is a newer process that is gaining favor as a method for depositing films with excellent properties and unparalleled precision. This work describes the development of novel CVD and ALD processes to deposit a variety of materials. Hafnium oxide and zirconium oxide show promise as replacements for SiO 2 as gate dielectrics in future-generation transistors. These high-k materials would provide sufficient capacitance with layers thick enough to avoid leakage from tunneling. An ALD method is presented here for depositing conformal hafnium oxide from tetrakis-(diethylamido)hafnium and oxygen gas. A CVD method for depositing zirconium oxide from tetrakis-(dialkylamido)zirconium and either oxygen gas or water vapor is also described. The use of copper for interconnects in integrated circuits requires improved diffusion barrier materials, given its high diffusivity compared to the previously-used aluminum and tungsten. Tungsten nitride has a low resistivity among barrier materials, and can be deposited in amorphous films that are effective diffusion barriers in layers as thin as a few nanometers. Here we demonstrate CVD and plasma-enhanced CVD methods to deposit tungsten nitride films from bis-(dialkylamido)bis-( tert-butylimido)tungsten precursors and ammonia gas. Recent findings had shown uniform copper growth on tantalum silicate films, without the dewetting that usually occurs on oxide surfaces. Tantalum and tungsten silicates were deposited by a CVD reaction from the reaction of either tris-(diethylamido)ethylimido tantalum or bis-(ethylmethylamido)-bis-( tert-butylimido)tungsten with tris-(tert-butoxy)silanol. The ability of evaporated

  3. Combustion chemical vapor deposited coatings for thermal barrier coating systems

    SciTech Connect

    Hampikian, J.M.; Carter, W.B.

    1995-12-31

    The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings. In this report, the evaluation of alumina and ceria coatings on a nickel-chromium alloy is described.

  4. Fundamental studies of chemical vapor deposition diamond growth processes

    SciTech Connect

    Shaw, R.W.; Whitten, W.B.; Ramsey, J.M.; Heatherly, L.

    1991-01-01

    We are developing laser spectroscopic techniques to foster a fundamental understanding of diamond film growth by hot filament chemical vapor deposition (CVD). Several spectroscopic techniques are under investigation to identify intermediate species present in the bulk reactor volume, the thin active volume immediately above the growing film, and the actual growing surface. Such a comprehensive examination of the overall deposition process is necessary because a combination of gas phase and surface chemistry is probably operating. Resonantly enhanced multiphoton ionization (REMPI) techniques have been emphasized. A growth rector that permits through-the-substrate gas sampling for REMPI/time-of-flight mass spectroscopy has been developed. 7 refs., 2 figs.

  5. Chemical and Magnetic Order in Vapor-Deposited Metal Films

    NASA Astrophysics Data System (ADS)

    Rooney, Peter Wiliam

    1995-01-01

    A stochastic Monte Carlo model of vapor deposition and growth of a crystalline, binary, A_3 B metallic alloy with a negative energy of mixing has been developed which incorporates deposition and surface diffusion in a physically correct manner and allows the simulation of deposition rates that are experimentally realizable. The effects of deposition rate and growth temperature on the development of short range order (SRO) in vapor-deposited films have been examined using this model. SRO in the simulated films increases with growth temperature up to the point at which the temperature corresponds to the energy of mixing, but we see no corresponding development of anisotropic SRO (preferential ordering of A-B pairs along the growth direction). Epitaxial (100) and (111) CoPt_3 films have been deposited over a range of growth temperatures from -50^circ C to 800^circC. Curie temperature (T_{rm c}) and saturation magnetization are dramatically enhanced in those films grown near 400^circ C over the values expected for the chemically homogeneous alloy. Magnetization data indicates that the high T _{rm c} films are inhomogeneous. These phenomena are interpreted as evidence of a previously unobserved magnetically driven miscibility gap in the Co-Pt phase diagram. Films grown near 400^circ C exhibit large uniaxial perpendicular magnetic anisotropy that cannot be accounted for by strain. The observed anisotropy coincides with the chemical phase separation and it seems likely that these two phenomena are related. Long range order (LRO) in the as-deposited films peaks at a growth temperature of 630^circC and then decreases with decreasing growth temperature. The decrease in LRO is either due to kinetic frustration or to competition from magnetically induced Co clustering. Theoretical phase diagrams based on the appropriate Blume-Emery-Griffiths Hamiltonian suggest the latter.

  6. Development and study of chemical vapor deposited tantalum base alloys

    NASA Technical Reports Server (NTRS)

    Meier, G. H.; Bryant, W. A.

    1976-01-01

    A technique for the chemical vapor deposition of alloys was developed. The process, termed pulsing, involves the periodic injection of reactant gases into a previously-evacuated reaction chamber where they blanket the substrate almost instantaneously. Formation of alternating layers of the alloy components and subsequent homogenization allows the formation of an alloy of uniform composition with the composition being determined by the duration and relative numbers of the various cycles. The technique has been utilized to produce dense alloys of uniform thickness and composition (Ta- 10 wt % W) by depositing alternating layers of Ta and W by the hydrogen reduction of TaCl5 and WCl6. A similar attempt to deposit a Ta - 8 wt % W - 2 wt% Hf alloy was unsuccessful because of the difficulty in reducing HfCl4 at temperatures below those at which gas phase nucleation of Ta and W occurred.

  7. Chemical vapor deposition of hydrogenated amorphous silicon from disilane

    SciTech Connect

    Bogaert, R.J.; Russell, T.W.F.; Klein, M.T. . Dept. of Chemical Engineering); Rocheleau, R.E.; Baron, B.N. . Inst. of Energy Conversion)

    1989-10-01

    The authors describe hydrogenated amorphous silicon (a-Si:H) thin films deposited at growth rates of 1 to 30 A/s by chemical vapor deposition (CVD) from disilane source gas at 24 torr total pressure in a tubular reactor. The effects of substrate temperature and gas holding time (flow rate) on film growth rate and effluent gas composition were measured at temperatures ranging from 360{sup 0} to 485{sup 0}C and gas holding times from 3 to 62s. Effluent gases determined by gas chromatography included silane, disilane and other higher order silanes. A chemical reaction engineering model, based on a silylene (SiH/sub 2/) insertion gas phase reaction network and film growth from both SiH/sub 2/ and high molecular weight silicon species, Si/sub n/H/sub 2n/, was developed. The model predictions were in good agreement with experimentally determined growth rates and effluent gas compositions.

  8. CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED CONDUCTORS

    SciTech Connect

    Paranthaman, Mariappan Parans

    2011-01-01

    We have reviewed briefly the growth of buffer and high temperature superconducting oxide thin films using a chemical solution deposition (CSD) method. In the Rolling-Assisted Biaxially Textured Substrates (RABiTS) process, developed at Oak Ridge National Laboratory, utilizes the thermo mechanical processing to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited epitaxially on the textured nickel alloy substrates. The starting substrate serves as a template for the REBCO layer, which has substantially fewer weak links. Buffer layers play a major role in fabricating the second generation REBCO wire technology. The main purpose of the buffer layers is to provide a smooth, continuous and chemically inert surface for the growth of the REBCO film, while transferring the texture from the substrate to the superconductor layer. To achieve this, the buffer layers need to be epitaxial to the substrate, i.e. they have to nucleate and grow in the same bi-axial texture provided by the textured metal foil. The most commonly used RABiTS multi-layer architectures consist of a starting template of biaxially textured Ni-5 at.% W (Ni-W) substrate with a seed (first) layer of Yttrium Oxide (Y2O3), a barrier (second) layer of Yttria Stabilized Zirconia (YSZ), and a Cerium Oxide (CeO2) cap (third) layer. These three buffer layers are generally deposited using physical vapor deposition (PVD) techniques such as reactive sputtering. On top of the PVD template, REBCO film is then grown by a chemical solution deposition. This article reviews in detail about the list of oxide buffers and superconductor REBCO films grown epitaxially on single crystal and/or biaxially textured Ni-W substrates using a CSD method.

  9. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  10. Chemical vapor deposition coating of fibers using microwave application

    NASA Technical Reports Server (NTRS)

    Barmatz, Martin B. (Inventor); Hoover, Gordon (Inventor); Jackson, Henry W. (Inventor)

    2000-01-01

    Chemical vapor deposition coating is carried out in a cylindrical cavity. The fibers are heated by a microwave source that is uses a TM0N0 mode, where O is an integer, and produces a field that depends substantially only on radius. The fibers are observed to determine their heating, and their position can be adjusted. Once the fibers are uniformly heated, a CVD reagent is added to process the fibers.

  11. Chemical vapor deposition (CVD) of cubic silicon carbide. Patent Application

    SciTech Connect

    Addamiano, A.

    1985-07-02

    This invention relates to the growth of cubic silicon carbide crystals. More specifically, this invention relates to the growth of cubic silicon carbide by Chemical Vapor Deposition (CVD). One object of the present invention is to provide a novel method for the production of cubic SiC for high temperature electronic devices. Another object of the present invention is to provide a novel method for the production of highly pure, single crystal cubic SiC that is duplicable. Another object of the present invention is to provide a novel method for the production of large-area single-crystal wafers of cubic SiC. These and other objects of the present invention can be achieved by a method for chemical vapor deposition (CVD) of cubic Silicon Carbide (SiC) comprising the steps of etching silicon substrated having one mechanically polished face; depositing a thin buffer layer of cubic SiC formed by reaction between a heated Si substrate and a H2-C3H8 gas mixuture; and depositing SiC on the buffer layer at high temperature using H2+C3HY+SiH4 mixture.

  12. Research on chemical vapor deposition processes for advanced ceramic coatings

    NASA Technical Reports Server (NTRS)

    Rosner, Daniel E.

    1993-01-01

    Our interdisciplinary background and fundamentally-oriented studies of the laws governing multi-component chemical vapor deposition (VD), particle deposition (PD), and their interactions, put the Yale University HTCRE Laboratory in a unique position to significantly advance the 'state-of-the-art' of chemical vapor deposition (CVD) R&D. With NASA-Lewis RC financial support, we initiated a program in March of 1988 that has led to the advances described in this report (Section 2) in predicting chemical vapor transport in high temperature systems relevant to the fabrication of refractory ceramic coatings for turbine engine components. This Final Report covers our principal results and activities for the total NASA grant of $190,000. over the 4.67 year period: 1 March 1988-1 November 1992. Since our methods and the technical details are contained in the publications listed (9 Abstracts are given as Appendices) our emphasis here is on broad conclusions/implications and administrative data, including personnel, talks, interactions with industry, and some known applications of our work.

  13. Modeling and Simulation of Plasma Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Smith, Aaron; Bett, Dominic; Cunningham, Monisha; Sen, Sudip

    2015-04-01

    Plasma Enhanced Chemical Vapor Deposition (PECVD) is a process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Recent study from the X-ray diffraction spectra of SnO2 films deposited as a function of RF power apparently indicates that RF power is playing a stabilizing role and hence in the better deposition. The results show that the RF power results in smoother morphology, improved crystallinity, and lower sheet resistance value in the PECVD process. The PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors. In this talk we will address two aspects of the problem, first to develop a model to study the mechanism of how the PECVD is effected by the RF power, and second to actually simulate the effect of RF power on PECVD. As the PECVD is a very important component of the plasma processing technology with many applications in the semiconductor technology and surface science, the research proposed here has the prospect to revolutionize the plasma processing technology through the stabilizing role of the RF power.

  14. What Are Bath Salts?

    MedlinePlus

    ... Are bath salts becoming more popular? Marsha Lopez Hi, Lauren. Nope! Actually quite the opposite! This family ... and how dangerous for your body? Michelle Rankin Hi ParkerPanella - Bath salts are drugs known as synthetic ...

  15. Chemical etching and organometallic chemical vapor deposition on varied geometries of GaAs

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Landis, Geoffrey A.; Wilt, David M.

    1989-01-01

    Results of micron-spaced geometries produced by wet chemical etching and subsequent OMCVD growth on various GaAs surfaces are presented. The polar lattice increases the complexity of the process. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher-order planes produced by the hex groove etching.

  16. METAL COATING BATHS

    DOEpatents

    Robinson, J.W.

    1958-08-26

    A method is presented for restoring the effectiveness of bronze coating baths used for hot dip coating of uranium. Such baths, containing a high proportion of copper, lose their ability to wet uranium surfaces after a period of use. The ability of such a bath to wet uranium can be restored by adding a small amount of metallic aluminum to the bath, and skimming the resultant hard alloy from the surface.

  17. Mechanical and piezoresistive properties of thin silicon films deposited by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition at low substrate temperatures

    NASA Astrophysics Data System (ADS)

    Gaspar, J.; Gualdino, A.; Lemke, B.; Paul, O.; Chu, V.; Conde, J. P.

    2012-07-01

    This paper reports on the mechanical and piezoresistance characterization of hydrogenated amorphous and nanocrystalline silicon thin films deposited by hot-wire chemical vapor deposition (HWCVD) and radio-frequency plasma-enhanced chemical vapor deposition (PECVD) using substrate temperatures between 100 and 250 °C. The microtensile technique is used to determine film properties such as Young's modulus, fracture strength and Weibull parameters, and linear and quadratic piezoresistance coefficients obtained at large applied stresses. The 95%-confidence interval for the elastic constant of the films characterized, 85.9 ± 0.3 GPa, does not depend significantly on the deposition method or on film structure. In contrast, mean fracture strength values range between 256 ± 8 MPa and 600 ± 32 MPa: nanocrystalline layers are slightly stronger than their amorphous counterparts and a pronounced increase in strength is observed for films deposited using HWCVD when compared to those grown by PECVD. Extracted Weibull moduli are below 10. In terms of piezoresistance, n-doped radio-frequency nanocrystalline silicon films deposited at 250 °C present longitudinal piezoresistive coefficients as large as -(2.57 ± 0.03) × 10-10 Pa-1 with marginally nonlinear response. Such values approach those of crystalline silicon and of polysilicon layers deposited at much higher temperatures.

  18. Modeling of InP metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Black, Linda R.; Clark, Ivan O.; Kui, J.; Jesser, William A.

    1991-01-01

    The growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: 1) transport phenomena, 2) chemistry, 3) boundary conditions, and 4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.

  19. Passivation properties of aluminum oxide films deposited by mist chemical vapor deposition for solar cell applications

    NASA Astrophysics Data System (ADS)

    Miki, Shohei; Iguchi, Koji; Kitano, Sho; Hayakashi, Koki; Hotta, Yasushi; Yoshida, Haruhiko; Ogura, Atsushi; Satoh, Shin-ichi; Arafune, Koji

    2015-08-01

    Aluminum oxide (AlOx) films were deposited by mist chemical vapor deposition (MCVD) in air for p-type crystalline silicon, and the effects of the deposition temperature (Tdep) and AlOx film thickness on the maximum surface recombination velocities (Smax) were evaluated. It was found that Smax was improved with increasing Tdep. The AlOx film deposited at 400 °C exhibited the best Smax value of 2.8 cm/s, and the passivation quality was comparable to that of AlOx deposited by other vacuum-based techniques. Smax was also improved with increasing film thickness. When the film thickness was above 10 nm, Smax was approximately 10 cm/s. From the Fourier transform infrared spectra, it was found that the AlOx films deposited by MCVD consisted of an AlOx layer and a Si-diffused AlOx layer. In addition, it is important for the layers to be thick enough to obtain high-quality passivation.

  20. Chemical vapor deposition modeling for high temperature materials

    NASA Technical Reports Server (NTRS)

    Gokoglu, Suleyman A.

    1992-01-01

    The formalism for the accurate modeling of chemical vapor deposition (CVD) processes has matured based on the well established principles of transport phenomena and chemical kinetics in the gas phase and on surfaces. The utility and limitations of such models are discussed in practical applications for high temperature structural materials. Attention is drawn to the complexities and uncertainties in chemical kinetics. Traditional approaches based on only equilibrium thermochemistry and/or transport phenomena are defended as useful tools, within their validity, for engineering purposes. The role of modeling is discussed within the context of establishing the link between CVD process parameters and material microstructures/properties. It is argued that CVD modeling is an essential part of designing CVD equipment and controlling/optimizing CVD processes for the production and/or coating of high performance structural materials.

  1. Further Experimental Investigation of Freeze-Lining/Bath Interface at Steady-State Conditions

    NASA Astrophysics Data System (ADS)

    Fallah-Mehrjardi, Ata; Hayes, Peter; Jak, Evgueni

    2014-12-01

    In design of the freeze-lining deposits in high-temperature reaction systems, it has been widely assumed that the interface temperature between the deposit and bath at steady-state conditions, that is, when the deposit interface velocity is zero, is the liquidus of the bulk bath material. Current work provides conclusive evidence that the interface temperature can be lower than that of the bulk liquidus. The observations are consistent with a mechanism involving the nucleation and growth of solids on detached crystals in a subliquidus layer as this fluid material moves toward the stagnant deposit interface and the dissolution of these detached crystals as they are transported away from the interface by turbulent eddies. The temperature and position of the stable deposit/liquid interface are determined by the balance between the extent of crystallization on the detached crystals and mass transfer across the subliquidus layer from the bulk bath. A conceptual framework is developed to analyze the factors influencing the steady-state deposit/interface temperature and deposit thickness in chemical systems operating in a positive temperature gradient. The framework can be used to explain the experimental observations in a diverse range of chemical systems and conditions, including high-temperature melts and aqueous solutions, and to explain why the interface temperature under these conditions can be between T liquidus and T solidus.

  2. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, Kevin C.; Kodas, Toivo T.

    1994-01-01

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  3. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    PubMed

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage. PMID:22097561

  4. Synthesis of mullite coatings by chemical vapor deposition

    SciTech Connect

    Mulpuri, R.P.; Auger, M.; Sarin, V.K.

    1996-08-01

    Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{circ}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}-SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

  5. Chemical vapor deposition of low reflective cobalt (II) oxide films

    NASA Astrophysics Data System (ADS)

    Amin-Chalhoub, Eliane; Duguet, Thomas; Samélor, Diane; Debieu, Olivier; Ungureanu, Elisabeta; Vahlas, Constantin

    2016-01-01

    Low reflective CoO coatings are processed by chemical vapor deposition from Co2(CO)8 at temperatures between 120 °C and 190 °C without additional oxygen source. The optical reflectivity in the visible and near infrared regions stems from 2 to 35% depending on deposition temperature. The combination of specific microstructural features of the coatings, namely a fractal "cauliflower" morphology and a grain size distribution more or less covering the near UV and IR wavelength ranges enhance light scattering and gives rise to a low reflectivity. In addition, the columnar morphology results in a density gradient in the vertical direction that we interpret as a refractive index gradient lowering reflectivity further down. The coating formed at 180 °C shows the lowest average reflectivity (2.9%), and presents an interesting deep black diffuse aspect.

  6. Textures and morphologies of chemical vapor deposited (CVD) diamond

    SciTech Connect

    Clausing, R.E.; Heatherly, L.; Horton, L.L.; Specht, E.D.; Begun, G.M. ); Wang, Z.L. )

    1991-01-01

    The textures, surface morphologies, structural perfection, and properties of diamond films grown by activated chemical vapor deposition (CVD) vary greatly with the growth conditions. The evolution of two commonly observed polycrystalline morphologies, which give rise to <110> textures, will be described as well as the development of four films grown to produce <100>, <111>, and near <100>'' textures with various combinations of growth facets. These films were grown to test models of texture development. Films free of twins, microtwins, and stacking faults are deposited when only (100) facets are permitted to grow. In polycrystalline materials, special conditions must be met to avoid the formation of planar defects at the peripheries of individual crystallites. The planar defects grow from (111) or mixed microfaceted surfaces. Twinning plays an important role in growth of (111) faceted surfaces. The films have been characterized with Raman spectroscopy, x-ray diffraction, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and optical methods. 13 refs., 7 figs.

  7. Electrical and chemical characterization of FIB-deposited insulators

    SciTech Connect

    Campbell, A.N.; Tanner, D.M.; Soden, J.M.; Adams, E.; Gibson, M.; Abramo, M.; Doyle, A.; Stewart, D.K.

    1997-10-01

    The electrical and chemical properties of insulators produced by codeposition of siloxane compounds or TEOS with oxygen in a focused ion beam (FIB) system were investigated. Metal-insulator-metal capacitor structures were fabricated and tested. Specifically, leakage current and breakdown voltage were measured and used to calculate the effective resistance and breakdown field. Capacitance measurements were performed on a subset of the structures. It was found that the siloxane-based FIB-insulators had superior electrical properties to those based on TEOS. Microbeam Rutherford backscattering spectrometry analysis and Fourier transform infrared spectroscopy were used to characterize the films and to help understand the differences in electrical behavior as a function of gas chemistry and deposition conditions. Finally, a comparison is made between the results presented here, previous results for FIB-deposited insulators, and typical thermally-grown gate oxides and interlevel dielectric SiO{sub 2} insulators.

  8. Regenerate metal-plating baths to cut waste and save

    SciTech Connect

    1995-03-01

    During electrode-based metal plating of equipment components, the formation of an electrical field causes metal deposits to be thicker at edges and seams, and thinner on flat surfaces. And, electrode-based methods consume large amounts of energy. Electroless-nickel (EN) -- or autocatalytic -- plating systems were pioneered in the 1940s to solve these problems. EN plating produces a more uniform coating, irrespective of the complexity of the part, and it consumes less electricity, since to electric current is required during plating. Plating in an EN system results from a chemical reaction between nickel in the bath and the substrate of the equipment component. The downside of electroless plating, however, is the limited life of the nickel bath, and the large volume of metal waste produced by bath disposal. Ionsep Corp. (Wilmington, Del.) has developed an electrodialytic system that continuously reforms the EN plating baths, to give them longer life. Its patented system has been successfully laboratory tested in a 1-ft{sup 2} cell, and the firm recently won a $250,000 grant from the US Dept. of Energy (Washington, D.C.) and Environmental Protection Agency (Washington, D.C.), to design and engineer a commercial-scale version of the system.

  9. Characterisation of TiO 2 deposited by photo-induced chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Kaliwoh, Never; Zhang, Jun-Ying; Boyd, Ian W.

    2002-01-01

    We report the deposition of thin TiO 2 films on crystalline Si and quartz by photo-induced chemical vapour deposition (CVD) using UV excimer lamps employing a dielectric barrier discharge in krypton chloride (KrCl ∗) to provide intense narrow band radiation at λ=222 nm. The precursor used was titanium isopropoxide (TTIP). Films from around 20-510 nm in thickness with refractive indices from 2.20 to 2.54 were grown at temperatures between 50 and 350 °C. The higher refractive index values compare favourably with the value of 2.58 recorded for the bulk material. The measured deposition rate was around 50 nm/min at 350 °C. Fourier transform infrared spectroscopy (FTIR) revealed the presence of TiO 2 through the observation of a Ti-O absorption peak and the absence of OH in films deposited at 250-350 °C indicated relatively good quality films. The phase of films deposited at 200-350 °C was anatase as determined by X-ray diffraction.

  10. Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Nam, Youngwoo; Sun, Jie; Lindvall, Niclas; Jae Yang, Seung; Rae Park, Chong; Woo Park, Yung; Yurgens, August

    2014-01-01

    We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

  11. Microscopic characterisation of suspended graphene grown by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Bignardi, Luca; van Dorp, Willem F.; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; de Hosson, Jeff Th. M.; Stöhr, Meike; Rudolf, Petra

    2013-09-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comparable with those of samples prepared by micromechanical cleaving of graphite. Measurements show that the area of high quality suspended graphene is limited by the folding of the graphene during the transfer.

  12. Microscopic characterisation of suspended graphene grown by chemical vapour deposition.

    PubMed

    Bignardi, Luca; van Dorp, Willem F; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; De Hosson, Jeff Th M; Stöhr, Meike; Rudolf, Petra

    2013-10-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comparable with those of samples prepared by micromechanical cleaving of graphite. Measurements show that the area of high quality suspended graphene is limited by the folding of the graphene during the transfer. PMID:23945527

  13. Chemical Vapor Deposited Zinc Sulfide. SPIE Press Monograph

    SciTech Connect

    McCloy, John S.; Tustison, Randal W.

    2013-04-22

    Zinc sulfide has shown unequaled utility for infrared windows that require a combination of long-wavelength infrared transparency, mechanical durability, and elevated-temperature performance. This book reviews the physical properties of chemical vapor deposited ZnS and their relationship to the CVD process that produced them. An in-depth look at the material microstructure is included, along with a discussion of the material's optical properties. Finally, because the CVD process itself is central to the development of this material, a brief history is presented.

  14. Chemical vapor deposited silicon carbide mirrors for extreme ultraviolet applications

    NASA Astrophysics Data System (ADS)

    Keski-Kuha, Ritva A.; Osantowski, John F.; Leviton, Douglas B.; Saha, Timo T.; Wright, Geraldine A.; Boucarut, Rene A.; Fleetwood, Charles M.; Madison, Timothy J.

    1997-01-01

    Advances in optical coating and materials technology have made possible the development of instruments with substantially improved efficiency in the extreme ultraviolet (EUV). For example, the development of the chemical vapor deposition (CVD) SiC mirrors provides an opportunity to extend the range of normal-incidence instruments dow to 60 nm. CVD SiC is a highly polishable material yielding low- scattering surfaces. High UV reflectivity and desirable mechanical and thermal properties make CVD SiC an attractive mirror and/or coating material for EUV applications. The EUV performance of SiC mirrors, as well as some strengths and problem areas, is discussed.

  15. Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition

    SciTech Connect

    Nam, Youngwoo; Sun, Jie; Lindvall, Niclas; Yurgens, August; Jae Yang, Seung; Rae Park, Chong; Woo Park, Yung

    2014-01-13

    We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

  16. Damping mechanisms in chemically vapor deposited SiC fibers

    NASA Technical Reports Server (NTRS)

    Dicarlo, James A.; Goldsby, Jon C.

    1993-01-01

    Evaluating the damping of reinforcement fibers is important for understanding their microstructures and the vibrational response of their structural composites. In this study the damping capacities of two types of chemically vapor deposited silicon carbide fibers were measured from -200 C to as high as 800 C. Measurements were made at frequencies in the range 50 to 15000 Hz on single cantilevered fibers. At least four sources were identified which contribute to fiber damping, the most significant being thermoelastic damping and grain boundary sliding. The mechanisms controlling all sources and their potential influence on fiber and composite performance are discussed.

  17. Plasma-enhanced chemical vapor deposition of multiwalled carbon nanofibers

    NASA Technical Reports Server (NTRS)

    Matthews, Kristopher; Cruden, Brett A.; Chen, Bin; Meyyappan, M.; Delzeit, Lance

    2002-01-01

    Plasma-enhanced chemical vapor deposition is used to grow vertically aligned multiwalled carbon nanofibers (MWNFs). The graphite basal planes in these nanofibers are not parallel as in nanotubes; instead they exhibit a small angle resembling a stacked cone arrangement. A parametric study with varying process parameters such as growth temperature, feedstock composition, and substrate power has been conducted, and these parameters are found to influence the growth rate, diameter, and morphology. The well-aligned MWNFs are suitable for fabricating electrode systems in sensor and device development.

  18. Low Temperature Deposition of β-phase Silicon Nitride Using Inductively Coupled Plasma Chemical Vapor Deposition Technique

    NASA Astrophysics Data System (ADS)

    Kshirsagar, Abhijeet; Duttagupta, S. P.; Gangal, S. A.

    2010-12-01

    Silicon nitride (SiN) films have been deposited at low temperature (≤100° C), by Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD) technique. The chemical and physical properties of deposited SiN films such as refractive index, deposition rate, and film stress have been measured. Additional structural characterization is performed using X-ray diffraction (XRD) and Micro Raman Spectroscopy. It is found that the films obtained are of low stress and have β-phase. To the best of authors knowledge such low temperature, low stress, β-phase SiN films deposition using ICPCVD are being reported for the first time.

  19. ZnS nanoflakes deposition by modified chemical method

    SciTech Connect

    Desai, Mangesh A. Sartale, S. D.

    2014-04-24

    We report deposition of zinc sulfide nanoflakes on glass substrates by modified chemical method. The modified chemical method involves adsorption of zinc–thiourea complex on the substrate and its dissociation in presence of hydroxide ions to release sulfur ions from thiourea which react with zinc ions present in the complex to form zinc sulfide nanoflakes at room temperature. Influence of zinc salt and thiourea concentrations ratios on the morphology of the films was investigated by scanning electron microscope (SEM). The ratio of zinc and thiourea in the zinc–thiourea complex significantly affect the size of the zinc sulfide nanoflakes, especially width and density of the nanoflakes. The X-ray diffraction analysis exhibits polycrystalline nature of the zinc sulfide nanoflakes with hexagonal phase.

  20. Chemical vapor deposition of conformal, functional, and responsive polymer films.

    PubMed

    Alf, Mahriah E; Asatekin, Ayse; Barr, Miles C; Baxamusa, Salmaan H; Chelawat, Hitesh; Ozaydin-Ince, Gozde; Petruczok, Christy D; Sreenivasan, Ramaswamy; Tenhaeff, Wyatt E; Trujillo, Nathan J; Vaddiraju, Sreeram; Xu, Jingjing; Gleason, Karen K

    2010-05-11

    Chemical vapor deposition (CVD) polymerization utilizes the delivery of vapor-phase monomers to form chemically well-defined polymeric films directly on the surface of a substrate. CVD polymers are desirable as conformal surface modification layers exhibiting strong retention of organic functional groups, and, in some cases, are responsive to external stimuli. Traditional wet-chemical chain- and step-growth mechanisms guide the development of new heterogeneous CVD polymerization techniques. Commonality with inorganic CVD methods facilitates the fabrication of hybrid devices. CVD polymers bridge microfabrication technology with chemical, biological, and nanoparticle systems and assembly. Robust interfaces can be achieved through covalent grafting enabling high-resolution (60 nm) patterning, even on flexible substrates. Utilizing only low-energy input to drive selective chemistry, modest vacuum, and room-temperature substrates, CVD polymerization is compatible with thermally sensitive substrates, such as paper, textiles, and plastics. CVD methods are particularly valuable for insoluble and infusible films, including fluoropolymers, electrically conductive polymers, and controllably crosslinked networks and for the potential to reduce environmental, health, and safety impacts associated with solvents. Quantitative models aid the development of large-area and roll-to-roll CVD polymer reactors. Relevant background, fundamental principles, and selected applications are reviewed. PMID:20544886

  1. Solvent-assisted dewetting during chemical vapor deposition.

    PubMed

    Chen, Xichong; Anthamatten, Mitchell

    2009-10-01

    This study examines the use of a nonreactive solvent vapor, tert-butanol, during initiated chemical vapor deposition (iCVD) to promote polymer film dewetting. iCVD is a solventless technique to grow polymer thin films directly from gas phase feeds. Using a custom-built axisymmetric hot-zone reactor, smooth poly(methyl methacrylate) films are grown from methyl methacrylate (MMA) and tert-butyl peroxide (TBPO). When solvent vapor is used, nonequilibrium dewetted structures comprising of randomly distributed polymer droplets are observed. The length scale of observed topographies, determined using power spectral density (PSD) analysis, ranges from 5 to 100 microm and is influenced by deposition conditions, especially the carrier gas and solvent vapor flow rates. The use of a carrier gas leads to faster deposition rates and suppresses thin film dewetting. The use of solvent vapor promotes dewetting and leads to larger length scales of the dewetted features. Control over lateral length scale is demonstrated by preparation of hierarchal "bump on bump" topographies. Vapor-induced dewetting is demonstrated on silicon wafer substrate with a native oxide layer and also on hydrophobically modified substrate prepared using silane coupling. Autophobic dewetting of PMMA from SiOx/Si during iCVD is attributed to a thin film instability driven by both long-range van der Waals forces and short-range polar interactions. PMID:19670895

  2. Fundamental studies of the chemical vapor deposition of diamond

    SciTech Connect

    Stevenson, D.A.

    1991-01-01

    The plasma or thermally enhanced low pressure chemical vapor deposition of diamond films is an exciting development with many challenging fundamental problems. The early stages of nucleation is relevant to the initial growth rate and the perfection and morphology of the deposit. To isolate one of the factors that influence nucleation, we have studied the effect of surface topography on the nucleation process. Our earlier work has shown preferential nucleation on sharp convex features and we have proposed several possible reasons for this behavior, including dangling bonds at the convex features. In our recent work, we have extended our investigation to include a novel patterning of silicon substrates used to pattern silicon solar cells. The results are consistent with our earlier observations that the majority of nucleation events occur on protruding surface features. In an effort to establish whether dangling bonds at the protruding surfaces may be responsible for the selective nucleation, we have evaluated the dangling bond concentration using electron spin resonance. We have carried out deposition under nominally identical surface topography, but with different concentrations of dangling bonds at or near the surface. The results of this study indicate that dangling bonds play a minor role in enhancing nucleation, in contrast to a substantial role played by special surface topographical features. In the course of the past year, we have submitted four manuscripts for publication and have made six presentations.

  3. Conversion Coatings for Aluminum Alloys by Chemical Vapor Deposition Mechanisms

    NASA Technical Reports Server (NTRS)

    Reye, John T.; McFadden, Lisa S.; Gatica, Jorge E.; Morales, Wilfredo

    2004-01-01

    With the rise of environmental awareness and the renewed importance of environmentally friendly processes, the United States Environmental Protection Agency has targeted surface pre-treatment processes based on chromates. Indeed, this process has been subject to regulations under the Clean Water Act as well as other environmental initiatives, and there is today a marked movement to phase the process out in the near future. Therefore, there is a clear need for new advances in coating technology that could provide practical options for replacing present industrial practices. Depending on the final application, such coatings might be required to be resistant to corrosion, act as chemically resistant coatings, or both. This research examined a chemical vapor deposition (CVD) mechanism to deposit uniform conversion coatings onto aluminum alloy substrates. Robust protocols based on solutions of aryl phosphate ester and multi-oxide conversion coating (submicron) films were successfully grown onto the aluminum alloy samples. These films were characterized by X-ray Photoelectron Spectroscopy (XPS). Preliminary results indicate the potential of this technology to replace aqueous-based chromate processes.

  4. Chemical vapor deposition of amorphous silicon films from disilane

    SciTech Connect

    Bogaert, R.J.

    1986-01-01

    Amorphous silicon films for fabrication of solar cells have been deposited by thermal chemical vapor deposition (CVD) from disilane (Si/sub 2/H/sub 6/) using a tubular flow reactor. A mathematical description for the CVD reactor was developed and solved by a numerical procedure. The proposed chemical reaction network for the model is based on silylene (SiH/sub 2/) insertion in the gas phase and film growth from SiH/sub 2/ and silicon polymers (Si/sub n/N/sub 2n/, n approx. 10). Estimates of the rate constants have been obtained for trisilane decomposition, silicon polymer formation, and polymer dehydrogenation. The silane unimolecular decomposition rate constants were corrected for pressure effects. The model behavior is compared to the experimental results over the range of conditions: reactor temperature (360 to 485/sup 0/C), pressures (2 to 48 torr), and gas holding time (1 to 70 s). Within the above range of conditions, film growth rate varies from 0.01 to 30 A/s. Results indicate that silicon polymers are the main film precursors for gas holding times greater than 3 s. Film growth by silylene only becomes important at short holding times, large inert gas dilution, and positions near the beginning of the reactor hot zone.

  5. Deposition of aligned bamboo-like carbon nanotubes via microwave plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Cui, H.; Zhou, O.; Stoner, B. R.

    2000-11-01

    Aligned multiwall carbon nanotubes have been grown on silicon substrates by microwave plasma enhanced chemical vapor deposition using methane/ammonia mixtures. Scanning electron microscopy shows that the nanotubes are well aligned with high aspect ratio and growth direction normal to the substrate. Transmission electron microscopy reveals that the majority phase has a bamboo-like structure. Data are also presented showing process variable effects on the size and microstructure of the aligned nanotubes, giving insight into possible nucleation and growth mechanisms for the process.

  6. NASA evaluation of Type 2 chemical depositions. [effects of deicer deposition on aircraft tire friction performance

    NASA Technical Reports Server (NTRS)

    Yager, Thomas J.; Stubbs, Sandy M.; Howell, W. Edward; Webb, Granville L.

    1993-01-01

    Recent findings from NASA Langley tests to define effects of aircraft Type 2 chemical deicer depositions on aircraft tire friction performance are summarized. The Aircraft Landing Dynamics Facility (ALDF) is described together with the scope of the tire cornering and braking friction tests conducted up to 160 knots ground speed. Some lower speed 32 - 96 km/hr (20 - 60 mph) test run data obtained using an Instrumented Tire Test Vehicle (ITTV) to determine effects of tire bearing pressure and transverse grooving on cornering friction performance are also discussed. Recommendations are made concerning which parameters should be evaluated in future testing.

  7. Chemical Vapor Deposition at High Pressure in a Microgravity Environment

    NASA Technical Reports Server (NTRS)

    McCall, Sonya; Bachmann, Klaus; LeSure, Stacie; Sukidi, Nkadi; Wang, Fuchao

    1999-01-01

    In this paper we present an evaluation of critical requirements of organometallic chemical vapor deposition (OMCVD) at elevated pressure for a channel flow reactor in a microgravity environment. The objective of using high pressure is to maintain single-phase surface composition for materials that have high thermal decomposition pressure at their optimum growth temperature. Access to microgravity is needed to maintain conditions of laminar flow, which is essential for process analysis. Based on ground based observations we present an optimized reactor design for OMCVD at high pressure and reduced gravity. Also, we discuss non-intrusive real-time optical monitoring of flow dynamics coupled to homogeneous gas phase reactions, transport and surface processes. While suborbital flights may suffice for studies of initial stages of heteroepitaxy experiments in space are essential for a complete evaluation of steady-state growth.

  8. Optics applications of chemical vapor deposited beta-SiC

    NASA Astrophysics Data System (ADS)

    Goela, Jitendra S.; Pickering, Michael A.

    1997-09-01

    The fabrication process, properties and optics applications of transparent and opaque chemical vapor deposited (CVD) (beta) -SiC are reviewed. CVD-SiC is produced by the pyrolysis of methyltrichlorosilane, in excess H2, in a low-pressure CVD reactor. The CVD process has been successfully scaled to produce monolithic SiC parts of diameter up to 1.5-m and thickness 2.5-cm. The characterization of CVD-SiC for important physical, optical, mechanical and thermal properties indicates that it is a superior material for optics applications. Important properties of CVD-SiC are compared with those of the other candidate mirror and window materials. The applications of CVD-SiC for lightweight optics, x-ray telescopes, optical buffers, lens molds, optical standards and windows and domes are discussed in detail.

  9. Chemical vapor deposited {beta}-SiC for optics applications

    SciTech Connect

    Goela, J.S.; Pikcering, M.A.; Taylor, R.L.

    1995-08-01

    The fabrication, properties and optics applications of transparent and opaque Chemical Vapor Deposited (CVD) {beta}-SiC are reviewed. CVD-SiC is fabricated by the pyrolysis of methyltrichlorosilane, in excess H{sub 2}, in a low-pressure CVD reactor. The CVD process has been successfully scaled to produce monolithic SiC parts of diameter up to 1.5 m and thickness 2.5 cm. The characterization of CVD-SiC for important physical, optical, mechanical and thermal properties indicate that it is a superior material for optics applications. CVD-SiC properties are compared with those of the other candidate mirror and window materials. SiC process/property relationships are discussed, emphasizing the differences in process conditions, microstructure, and properties between transparent and opaque CVD-SiC.

  10. Strain relaxation in graphene grown by chemical vapor deposition

    SciTech Connect

    Troppenz, Gerald V. Gluba, Marc A.; Kraft, Marco; Rappich, Jörg; Nickel, Norbert H.

    2013-12-07

    The growth of single layer graphene by chemical vapor deposition on polycrystalline Cu substrates induces large internal biaxial compressive strain due to thermal expansion mismatch. Raman backscattering spectroscopy and atomic force microscopy were used to study the strain relaxation during and after the transfer process from Cu foil to SiO{sub 2}. Interestingly, the growth of graphene results in a pronounced ripple structure on the Cu substrate that is indicative of strain relaxation of about 0.76% during the cooling from the growth temperature. Removing graphene from the Cu substrates and transferring it to SiO{sub 2} results in a shift of the 2D phonon line by 27 cm{sup −1} to lower frequencies. This translates into additional strain relaxation. The influence of the processing steps, used etching solution and solvents on strain, is investigated.

  11. Creep of chemically vapor deposited SiC fibers

    NASA Technical Reports Server (NTRS)

    Dicarlo, J. A.

    1984-01-01

    The creep, thermal expansion, and elastic modulus properties for chemically vapor deposited SiC fibers were measured between 1000 and 1500 C. Creep strain was observed to increase logarithmically with time, monotonically with temperature, and linearly with tensile stress up to 600 MPa. The controlling activation energy was 480 + or - 20 kJ/mole. Thermal pretreatments near 1200 and 1450 C were found to significantly reduce fiber creep. These results coupled with creep recovery observations indicate that below 1400 C fiber creep is anelastic with neglible plastic component. This allowed a simple predictive method to be developed for describing fiber total deformation as a function of time, temperature, and stress. Mechanistic analysis of the property data suggests that fiber creep is the result of beta-SiC grain boundary sliding controlled by a small percent of free silicon in the grain boundaries.

  12. Growth of graphene films by plasma enhanced chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Baraton, Laurent; Gangloff, Laurent; Xavier, Stéphane; Cojocaru, Costel S.; Huc, Vincent; Legagneux, Pierre; Lee, Young Hee; Pribat, Didier

    2009-08-01

    Since it was isolated in 2004, graphene, the first known 2D crystal, is the object of a growing interest, due to the range of its possible applications as well as its intrinsic properties. From large scale electronics and photovoltaics to spintronics and fundamental quantum phenomena, graphene films have attracted a large community of researchers. But bringing graphene to industrial applications will require a reliable, low cost and easily scalable synthesis process. In this paper we present a new growth process based on plasma enhanced chemical vapor deposition. Furthermore, we show that, when the substrate is an oxidized silicon wafer covered by a nickel thin film, graphene is formed not only on top of the nickel film, but also at the interface with the supporting SiO2 layer. The films grown using this method were characterized using classical methods (Raman spectroscopy, AFM, SEM) and their conductivity is found to be close to those reported by others.

  13. Radio-frequency plasma chemical vapor deposition growth of diamond

    NASA Technical Reports Server (NTRS)

    Meyer, Duane E.; Dillon, Rodney O.; Woollam, John A.

    1989-01-01

    Plasma chemical vapor deposition (CVD) at 13.56 MHz has been used to produce diamond particles in two different inductively coupled systems with a mixture of methane and hydrogen. The effect of a diamondlike carbon (DLC) overcoating on silicon, niobium, and stainless-steel substrates has been investigated and in the case of silicon has been found to enhance particle formation as compared to uncoated polished silicon. In addition the use of carbon monoxide in hydrogen has been found to produce well-defined individual faceted particles as well as polycrystalline films on quartz and DLC coated silicon substrates. Plasma CVD is a competitive approach to production of diamond films. It has the advantage over microwave systems of being easily scaled to large volume and high power.

  14. Chemical vapor deposition growth of patterned graphene on copper

    NASA Astrophysics Data System (ADS)

    Gutierrez, Humberto; Wang, Bei; Zhu, J.

    2010-03-01

    Graphene possesses unique electronic properties and application potentials. However, the synthesis of high-quality, single-layer graphene on large scale remains challenging. Mechanical exfoliation from graphite crystals yields graphene of the highest quality but in an uncontrolled and non-scalable way. Epitaxial growth on SiC has made significant advances in large-scale synthesis, although the cost is relatively high. Very recently, chemical vapor deposition (CVD) is used to grow graphene on Ni and Cu surfaces and has also produced large-area graphene of reasonably high quality. Cracks and ripples, however, present considerable challenges to the CVD growth and transfer process. We report the CVD growth of single-layer graphene on patterned, micron-size copper templates. Raman spectra of the films show low D-band and relatively narrow 2D peak, suggesting high quality. We present and discuss the transport properties of graphene films transferred onto an insulating substrate.

  15. Chemical vapor deposition fluid flow simulation modelling tool

    NASA Technical Reports Server (NTRS)

    Bullister, Edward T.

    1992-01-01

    Accurate numerical simulation of chemical vapor deposition (CVD) processes requires a general purpose computational fluid dynamics package combined with specialized capabilities for high temperature chemistry. In this report, we describe the implementation of these specialized capabilities in the spectral element code NEKTON. The thermal expansion of the gases involved is shown to be accurately approximated by the low Mach number perturbation expansion of the incompressible Navier-Stokes equations. The radiative heat transfer between multiple interacting radiating surfaces is shown to be tractable using the method of Gebhart. The disparate rates of reaction and diffusion in CVD processes are calculated via a point-implicit time integration scheme. We demonstrate the use above capabilities on prototypical CVD applications.

  16. Synthesis of large-size graphene by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wu, Ruizhe; Ding, Yao; Gan, Lin; Luo, Zhengtang

    2015-09-01

    The requirement for long-range structure coherence and property uniformity for graphene-based electronics are crucial for their applications in electronics. Here, we briefly review our recent progress on synthesis of large-size graphene by seeded growth method. We demonstrate a seeded growth method which allows us to reduce the nucleation density in early stage of Chemical Vapor Deposition (CVD) leading to the production of low density of graphene grains and consequently achieve grain size of sub-centimeter. We further demonstrate that we can amplify the graphene grain size by limiting the second seeded growth only from the graphene seed edges. Moreover, we demonstrate that similar method can be used for the preparation of large-grain bilayer graphene flakes.

  17. Chemical vapour deposition synthetic diamond: materials, technology and applications

    NASA Astrophysics Data System (ADS)

    Balmer, R. S.; Brandon, J. R.; Clewes, S. L.; Dhillon, H. K.; Dodson, J. M.; Friel, I.; Inglis, P. N.; Madgwick, T. D.; Markham, M. L.; Mollart, T. P.; Perkins, N.; Scarsbrook, G. A.; Twitchen, D. J.; Whitehead, A. J.; Wilman, J. J.; Woollard, S. M.

    2009-09-01

    Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form; however, non-planar geometries are also possible and enable a number of key applications. This paper reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, on the basis of the ability to synthesize a consistent and engineered high performance product.

  18. Chemical vapour deposition synthetic diamond: materials, technology and applications.

    PubMed

    Balmer, R S; Brandon, J R; Clewes, S L; Dhillon, H K; Dodson, J M; Friel, I; Inglis, P N; Madgwick, T D; Markham, M L; Mollart, T P; Perkins, N; Scarsbrook, G A; Twitchen, D J; Whitehead, A J; Wilman, J J; Woollard, S M

    2009-09-01

    Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form; however, non-planar geometries are also possible and enable a number of key applications. This paper reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, on the basis of the ability to synthesize a consistent and engineered high performance product. PMID:21832327

  19. Characterization of Carbon Nanotubes Grown by Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Cochrane, J. C.; Zhu, Shen; Su, Ching-Hua; Lehoczky, S. L.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Since the superior properties of multi-wall carbon nanotubes (MWCNT) could improve numerous devices such as electronics and sensors, many efforts have been made in investigating the growth mechanism of MWCNT to synthesize high quality MWCNT. Chemical vapor deposition (CVD) is widely used for MWCNT synthesis, and scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS) are useful methods for analyzing the structure, morphology and composition of MWCNT. Temperature and pressure are two important growth parameters for fabricating carbon nanotubes. In MWCNT growth by CVD, the plasma assisted method is normally used for low temperature growth. However a high temperature environment is required for thermal CVD. A systematic study of temperature and pressure-dependence is very helpful to understanding MWCNT growth. Transition metal particles are commonly used as catalysis in carbon nanotube growth. It is also interesting to know how temperature and pressure affect the interface of carbon species and catalyst particles

  20. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOEpatents

    Miller, Joel S.; Pokhodnya, Kostyantyn I.

    2003-12-09

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  1. Development and evaluation of chemically inpregnated filter for deposition monitoring

    SciTech Connect

    Fung, K. )

    1988-01-01

    The Operational and Evaluation Network (OEN) and the Acid Model Operational Diagnostic Model Evaluation Study (ACID MODES) are large scale regional networks sponsored respectively by the Electric Power Research Institute (EPRI) and the U.S. Environmental Protection Agency to collect daily average concentration data of particles and gases for the evaluation of acid deposition models such as the Acid Deposition and Oxidant Model (ADOM) and the Regional Acid Deposition Model (RADM). Data from two Canadian Networks, CAPMoN and APIOS, will also be incorporated for the evaluation purpose. While the design of the sampler may vary, a basic sampling unit common to these programs is the filter pack, which has two or more filters in a stacked arrangement, depending on the application. The top filter, usually Teflon, is used to collect or remove particles from the sampling air stream. The subsequent filters are for the collection of gases: Nylon for HNO{sub 3} and volatilized nitrate, citric acid-impregnated filter for NH{sub 3}, triethanolamine (TEA)-impregnated filter for NO{sub 2}, and K{sub 2}CO{sub 3}-impregnated filter for SO{sub 2}. These various chemically treated filters have been used previously. But since the monitoring is conducted year-round over very large geographic areas, the diversity of the climatic conditions under which sampling will be conducted may seriously affect the performance of these filters. Also, when multiple filters are stacked for the collection of various gases, their order of arrangement as well as pressure drop must be considered in terms of filter collection selectivity and pump performance. This paper reports on a series of tests that were conducted to address these various issues to ensure that the measurements will be conducted successfully in these programs.

  2. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor

    NASA Astrophysics Data System (ADS)

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G.

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnOx-CVD layers.

  3. Amorphous Carbon Deposited by a Novel Aerosol-Assisted Chemical Vapor Deposition for Photovoltaic Solar Cells

    NASA Astrophysics Data System (ADS)

    Ahmad, Nurfadzilah; Kamaruzzaman, Dayana; Rusop, Mohamad

    2012-06-01

    Amorphous carbon (a-C) solar cells were successfully prepared using a novel and self-designed aerosol-assisted chemical vapor deposition (AACVD) method using camphor oil as a precursor. The fabricated solar cell with the configuration of Au/p-C/n-Si/Au achieved an efficiency of 0.008% with a fill factor of 0.15 for the device deposited at 0.5 h. The current-voltage (I-V) graph emphasized on the linear graph (ohmic) for the a-C thin films, whereas for the p-n device structure, a rectifying curve was obtained. The rectifying curves signify the heterojunction between the p-type a-C film and the n-Si substrate and designate the generation of electron-hole pair of the samples under illumination. Photoresponse characteristics of the deposited a-C was highlighted when being illuminated (AM 1.5 illumination: 100 mW/cm2, 25 °C). Transmittance spectrum exhibit a large transmittance value (>85%) and absorption coefficient value of 103-104 cm-1 at the visible range of 390 to 790 nm. The atomization of a liquid precursor solution into fine sub-micrometre-sized aerosol droplets in AACVD induced the smooth surface of a-C films. To the best of our knowledge, fabrication of a-C solar cell using this AACVD method has not yet been reported.

  4. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor.

    PubMed

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnO(x)-CVD layers. PMID:24089868

  5. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    PubMed

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems. PMID:27043922

  6. Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene.

    PubMed

    Harberts, Megan; Lu, Yu; Yu, Howard; Epstein, Arthur J; Johnston-Halperin, Ezekiel

    2015-01-01

    Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in traditional materials, including low cost and mechanical flexibility. In a similar vein, it would be advantageous to expand the use of organics into high frequency electronics and spin-based electronics. This work presents a synthetic process for the growth of thin films of the room temperature organic ferrimagnet, vanadium tetracyanoethylene (V[TCNE]x, x~2) by low temperature chemical vapor deposition (CVD). The thin film is grown at <60 °C, and can accommodate a wide variety of substrates including, but not limited to, silicon, glass, Teflon and flexible substrates. The conformal deposition is conducive to pre-patterned and three-dimensional structures as well. Additionally this technique can yield films with thicknesses ranging from 30 nm to several microns. Recent progress in optimization of film growth creates a film whose qualities, such as higher Curie temperature (600 K), improved magnetic homogeneity, and narrow ferromagnetic resonance line-width (1.5 G) show promise for a variety of applications in spintronics and microwave electronics. PMID:26168285

  7. Chemical vapor deposition coatings for oxidation protection of titanium alloys

    NASA Technical Reports Server (NTRS)

    Cunnington, G. R.; Robinson, J. C.; Clark, R. K.

    1991-01-01

    Results of an experimental investigation of the oxidation protection afforded to Ti-14Al-21Nb and Ti-14Al-23Nb-2V titanium aluminides and Ti-17Mo-3Al-3Nb titanium alloy by aluminum-boron-silicon and boron-silicon coatings are presented. These coatings are applied by a combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. The former is for the application of aluminum, and the latter is for codeposition of boron and silicon. Coating thickness is in the range of 2 to 7 microns, and coating weights are 0.6 to 2.0 mg/sq cm. Oxidation testing was performed in air at temperatures to 1255 K in both static and hypersonic flow environments. The degree of oxidation protection provided by the coatings is determined from weight change measurements made during the testing and post test compositional analyses. Temperature-dependent total normal emittance data are also presented for four coating/substrate combinations. Both types of coatings provided excellent oxidation protection for the exposure conditions of this investigation. Total normal emittances were greater than 0.80 in all cases.

  8. Fluorinated carboxylic membranes deposited by plasma enhanced chemical vapour deposition for fuel cell applications

    NASA Astrophysics Data System (ADS)

    Thery, J.; Martin, S.; Faucheux, V.; Le Van Jodin, L.; Truffier-Boutry, D.; Martinent, A.; Laurent, J.-Y.

    Among the fuel cell technologies, the polymer electrolyte membrane fuel cells (PEMFCs) are particularly promising because they are energy-efficient, clean, and fuel-flexible (i.e., can use hydrogen or methanol). The great majority of PEM fuel cells rely on a polymer electrolyte from the family of perfluorosulfonic acid membranes, nevertheless alternative materials are currently being developed, mainly to offer the alternative workout techniques which are required for the portable energy sources. Plasma polymerization represents a good solution, as it offers the possibility to deposit thin layer with an accurate and homogeneous thickness, even on 3D surfaces. In this paper, we present the results for the growth of proton conductive fluoro carboxylic membranes elaborated by plasma enhanced chemical vapour deposition. These membranes present conductivity values of the same order than the one of Nafion ®. The properties of the membrane, such as the chemical composition, the ionic conductivity, the swelling behaviour and the permeability were correlated to the plasma process parameters. The membranes were integrated in fuel cells on porous substrates and we present here the results regarding the barrier effect and the power output. Barrier effect similar to those of 40 μm Nafion ® layers was reached for 10 μm thick carboxylic membranes. Power outputs around 3 mW cm -2 were measured. We discuss the results regarding the gas barrier effect and the power outputs.

  9. Selected area chemical vapor deposition of thin films for conductometric microelectronic chemical sensors

    NASA Astrophysics Data System (ADS)

    Majoo, Sanjeev

    Recent advances in microelectronics and silicon processing have been exploited to fabricate miniaturized chemical sensors. Although the capability of chemical sensing technology has grown steadily, it has been outpaced by the increasing demands for more reliable, inexpensive, and selective sensors. The diversity of applications requires the deployment of different sensing materials that have rich interfacial chemistry. However, several promising sensor materials are often incompatible with silicon micromachining and their deposition requires complicated masking steps. The new approach described here is to first micromachine a generic, instrumented, conductometric, microelectronic sensor platform that is fully functional except for the front-end sensing element. This generic platform contains a thin dielectric membrane, an integrated boron-doped silicon heater, and conductance electrodes. The membrane has low thermal mass and excellent thermal isolation. A proprietary selected-area chemical vapor deposition (SACVD) process in a cold-wall reactor at low pressures was then used to achieve maskless, self-lithographic deposition of thin films. The temperature-programmable integrated microheater initiates localized thermal decomposition/reaction of suitable CVD precursors confined to a small heated area (500 mum in diameter), and this creates the active sensing element. Platinum and titania (TiOsb2) films were deposited from pyrolysis of organometallic precursors, tetrakistrifluorophosphine platinum Pt(PFsb3)sb4 and titanium tetraisopropoxide Ti(OCH(CHsb3)sb2rbrack sb4, respectively. Deposition of gold metal films from chlorotriethylphosphine gold (Csb2Hsb5)sb3PAuCl precursor was also attempted but without success. The conductance electrodes permit in situ monitoring of film growth. The as-deposited films were characterized in situ by conductance measurements and optical microscopy and ex situ by electron microscopy and spectroscopy methods. Devices equipped with

  10. X-RAY, MICROSCOPE, AND WET CHEMICAL TECHNIQUES: COMPLEMENTARY TEAM FOR DEPOSIT ANALYSIS

    EPA Science Inventory

    Commonly used techniques for the analysis of potable water scale and corrosion deposits do not provide equivalent information about the chemical nature and significance of the deposits. ptical examination, with unaided eye and with microscopes, provides some useful information. -...

  11. Vertically aligned peptide nanostructures using plasma-enhanced chemical vapor deposition.

    PubMed

    Vasudev, Milana C; Koerner, Hilmar; Singh, Kristi M; Partlow, Benjamin P; Kaplan, David L; Gazit, Ehud; Bunning, Timothy J; Naik, Rajesh R

    2014-02-10

    In this study, we utilize plasma-enhanced chemical vapor deposition (PECVD) for the deposition of nanostructures composed of diphenylalanine. PECVD is a solvent-free approach and allows sublimation of the peptide to form dense, uniform arrays of peptide nanostructures on a variety of substrates. The PECVD deposited d-diphenylalanine nanostructures have a range of chemical and physical properties depending on the specific discharge parameters used during the deposition process. PMID:24400716

  12. Chemical vapor deposited fiber coatings and chemical vapor infiltrated ceramic matrix composites

    SciTech Connect

    Kmetz, M.A.

    1992-01-01

    Conventional Chemical Vapor Deposition (CVD) and Organometallic Chemical Vapor Deposition (MOCVD) were employed to deposit a series of interfacial coatings on SiC and carbon yarn. Molybdenum, tungsten and chromium hexacarbonyls were utilized as precursors in a low temperature (350[degrees]C) MOCVD process to coat SiC yarn with Mo, W and Cr oxycarbides. Annealing studies performed on the MoOC and WOC coated SiC yarns in N[sub 2] to 1,000[degrees]C establish that further decomposition of the oxycarbides occurred, culminating in the formation of the metals. These metals were then found to react with Si to form Mo and W disilicide coatings. In the Cr system, heating in N[sub 2] above 800[degrees]C resulted in the formation of a mixture of carbides and oxides. Convention CVD was also employed to coat SiC and carbon yarn with C, Bn and a new interface designated BC (a carbon-boron alloy). The coated tows were then infiltrated with SiC, TiO[sub 2], SiO[sub 2] and B[sub 4]C by a chemical vapor infiltration process. The B-C coatings were found to provide advantageous interfacial properties over carbon and BN coatings in several different composite systems. The effectiveness of these different coatings to act as a chemically inert barrier layer and their relationship to the degree of interfacial debonding on the mechanical properties of the composites were examined. The effects of thermal stability and strength of the coated fibers and composites were also determined for several difference atmospheres. In addition, a new method for determining the tensile strength of the as-received and coated yarns was also developed. The coated fibers and composites were further characterized by AES, SEM, XPS, IR and X-ray diffraction analysis.

  13. Internal boiler tube deposit weights as a basis for chemical cleaning

    SciTech Connect

    Weick, R.H.

    1994-12-31

    Owners and operators of today`s modern boilers require a foundation or support for chemical cleaning to prevent failures by excessive waterside deposits. If deposits are not removed, they will lead to overheating or corrosion related failures. Chemical cleaning at the appropriate time will avoid the risk of tube failures, while minimizing chemical cleaning and associated waste disposal costs. Internal deposit weight guidelines are presented to fulfill this requirement.

  14. High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Vohra, Yogesh K. (Inventor); McCauley, Thomas S. (Inventor)

    1997-01-01

    The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.

  15. Electrochromic Devices Deposited on Low-Temperature Plastics by Plasma-Enhanced Chemical Vapor Deposition

    SciTech Connect

    Robbins, Joshua; Seman, Michael

    2005-09-20

    Electrochromic windows have been identified by the Basic energy Sciences Advisory committee as an important technology for the reduction of energy spent on heating and cooling in residential and commercial buildings. Electrochromic devices have the ability to reversibly alter their optical properties in response to a small electric field. By blocking ultraviolet and infrared radiation, while modulating the incoming visible radiation, electrochromics could reduce energy consumption by several Quads per year. This amounts to several percent of the total annual national energy expenditures. The purpose of this project was to demonstrate proof of concept for using plasma-enhanced chemical vapor deposition (PECVD) for depositing all five layers necessary for full electrochromic devices, as an alternative to sputtering techniques. The overall goal is to produce electrochromic devices on flexible polymer substrates using PECVD to significantly reduce the cost of the final product. We have successfully deposited all of the films necessary for a complete electrochromic devices using PECVD. The electrochromic layer, WO3, displayed excellent change in visible transmission with good switching times. The storage layer, V2O5, exhibited a high storage capacity and good clear state transmission. The electrolyte, Ta2O5, was shown to functional with good electrical resistivity to go along with the ability to transfer Li ions. There were issues with leakage over larger areas, which can be address with further process development. We developed a process to deposit ZnO:Ga with a sheet resistance of < 50 W/sq. with > 90% transmission. Although we were not able to deposit on polymers due to the temperatures required in combination with the inverted position of our substrates. Two types of full devices were produced. Devices with Ta2O5 were shown to be functional using small aluminum dots as the top contact. The polymer electrolyte devices were shown to have a clear state transmission of

  16. COUPLING OF PHYSICAL AND CHEMICAL MECHANISMS OF COLLOID DEPOSITION

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Considerable research suggests that colloid deposition is frequently not consistent with filtration theory predictions under unfavorable attachment conditions. Filtration theory does not include the potential influence of pore structure on straining deposition. Conversely, previous research on strai...

  17. Thin-Film Deposition of Metal Oxides by Aerosol-Assisted Chemical Vapour Deposition: Evaluation of Film Crystallinity

    NASA Astrophysics Data System (ADS)

    Takeuchi, Masahiro; Maki, Kunisuke

    2007-12-01

    Sn-doped In2O3 (ITO) thin films are deposited on glass substrates using 0.2 M aqueous and methanol solutions of InCl3(4H2O) with 5 mol % SnCl2(2H2O) by aerosol-assisted chemical vapour deposition under positive and negative temperature gradient conditions. The film crystallinity is evaluated by determining the film thickness dependence of X-ray diffraction peak height. When using aqueous solution, the ITO films grow with the same crystallinity during the deposition, but when using methanol solution, the preferred orientation of ITO changes during the deposition.

  18. Growth of graphene underlayers by chemical vapor deposition

    SciTech Connect

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu; Charlie Johnson, A. T.

    2013-11-15

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  19. Model of carrier dynamics in chemical vapor deposition diamond detectors

    SciTech Connect

    Borchi, Emilio; Lagomarsino, Stefano; Mersi, Stefano; Sciortino, Silvio

    2005-03-01

    We propose a quantitative model of electronic transport on the basis of a conductivity characterization of diamond-based sensors exposed to {beta} radiation. Some of the investigated samples have been irradiated with neutron up to a fluence of 2x10{sup 15}/cm{sup 2}. Radiation-induced current measurements have been performed to study the trapping and recombination of deep defect levels in the diamond band gap. We present a quantitative analysis of the passivation of deep traps and the release of carriers during thermal fading between consecutive exposures. We determine the density of trap states per unit volume and per unit energy and their capture cross sections. We also evaluate the modification of these parameters after neutron irradiation. Our analysis gives the cross sections of the traps involved in our measurements with an accuracy of 20-50%, which is far better than that attainable with thermal spectroscopy. Our results on the capture cross section of the recombination centers agree with relevant works presented in literature on natural IIa diamond. We propose that some defects are of the same nature in chemical vapor deposition diamond, but their concentration is far lower in the state-of-the-art material. We also study a modification of the trap level distribution after neutron irradiation. Finally we propose a rationale for the improvement obtained in recent years in the performances of top quality polycrystalline diamond sensors.

  20. Modelling of Laser-Enhanced Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Brown, R. A.

    1985-01-01

    Research is directed at development of a detailed model of mass and heat transfer and chemical reaction in the pyrolysis of silane for the growth of thin amorphous silicon substrates incorporating laser heating of the gas phase above the film. The model will be the basis for evaluation of the relative importances of the decomposition of SiH4 in the vapor phase, mass transfer of the intermediate species, e.g., SiH2, and the evolution of hydrogen gas. Plans are also underway for developing a model for homogeneous nucleation of Si in the vapor phase to model the rate limitations observed at high gas-phase temperatures and high partial pressures of silane. Work was concentrated on an almost one-dimensional model for the coupling of the CO2 laser beam for heat transfer of the vapor phase with simple kinetic models for SiH4 decomposition and subsequent absorption of Si vapor on the substrate. Mass transfer in the vapor phase is assumed to be solely by diffusion. The role of convection in the vapor phase caused by the large changes in density in and around the center of the laser beam will be analyzed to evaluate the potential of microgravity experiments for increasing the uniformity of the film and the deposition rate.

  1. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    NASA Astrophysics Data System (ADS)

    Zubkov, V. I.; Kucherova, O. V.; Bogdanov, S. A.; Zubkova, A. V.; Butler, J. E.; Ilyin, V. A.; Afanas'ev, A. V.; Vikharev, A. L.

    2015-10-01

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120-150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10-13 down to 2 × 10-17 cm2 was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (˜2 × 10-20 cm2). At T > Troom in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  2. Photo Initiated Chemical Vapour Deposition To Increase Polymer Hydrophobicity

    PubMed Central

    Bérard, Ariane; Patience, Gregory S.; Chouinard, Gérald; Tavares, Jason R.

    2016-01-01

    Apple growers face new challenges to produce organic apples and now many cover orchards with high-density polyethylene (HDPE) nets to exclude insects, rather than spraying insecticides. However, rainwater- associated wetness favours the development of apple scabs, Venturia inaequalis, whose lesions accumulate on the leaves and fruit causing unsightly spots. Treating the nets with a superhydrophobic coating should reduce the amount of water that passes through the net. Here we treat HDPE and polyethylene terephthalate using photo-initiated chemical vapour deposition (PICVD). We placed polymer samples in a quartz tube and passed a mixture of H2 and CO through it while a UVC lamp (254 nm) illuminated the surface. After the treatment, the contact angle between water droplets and the surface increased by an average of 20°. The contact angle of samples placed 70 cm from the entrance of the tube was higher than those at 45 cm and 20 cm. The PICVD-treated HDPE achieved a contact angle of 124°. Nets spray coated with a solvent-based commercial product achieved 180° but water ingress was, surprisingly, higher than that for nets with a lower contact angle. PMID:27531048

  3. nanowires by solid-source chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Han, Ning; Wang, Fengyun; Yang, Zaixing; Yip, SenPo; Dong, Guofa; Lin, Hao; Fang, Ming; Hung, TakFu; Ho, Johnny C.

    2014-07-01

    Growing Ga2O3 dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga2O3 nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to the typical synthesis temperature of above 1,000°C as reported by other methods. In this work, the prepared β-Ga2O3 nanowires are mainly composed of Ga and O elements with an atomic ratio of approximately 2:3. Importantly, they are highly crystalline in the monoclinic structure with varied growth orientations in low-index planes. The bandgap of the β-Ga2O3 nanowires is determined to be 251 nm (approximately 4.94 eV), in good accordance with the literature. Also, electrical characterization reveals that the individual nanowire has a resistivity of up to 8.5 × 107 Ω cm, when fabricated in the configuration of parallel arrays, further indicating the promise of growing these highly insulating Ga2O3 materials in this III-V nanowire-compatible growth condition.

  4. Long distance spin communication in chemical vapour deposited graphene

    PubMed Central

    Kamalakar, M. Venkata; Groenveld, Christiaan; Dankert, André; Dash, Saroj P.

    2015-01-01

    Graphene is an ideal medium for long-distance spin communication in future spintronic technologies. So far, the prospect is limited by the smaller sizes of exfoliated graphene flakes and lower spin transport properties of large-area chemical vapour-deposited (CVD) graphene. Here we demonstrate a high spintronic performance in CVD graphene on SiO2/Si substrate at room temperature. We show pure spin transport and precession over long channel lengths extending up to 16 μm with a spin lifetime of 1.2 ns and a spin diffusion length ∼6 μm at room temperature. These spin parameters are up to six times higher than previous reports and highest at room temperature for any form of pristine graphene on industrial standard SiO2/Si substrates. Our detailed investigation reinforces the observed performance in CVD graphene over wafer scale and opens up new prospects for the development of lateral spin-based memory and logic applications. PMID:25857650

  5. Chemical vapor deposition of high T sub c superconductors

    NASA Technical Reports Server (NTRS)

    Webb, G. W.; Engelhardt, J. J.

    1978-01-01

    The results are reported of an investigation into the synthesis and properties of high temperature superconducting materials. A chemical vapor deposition apparatus was designed and built which is suitable for the preparation of multicomponent metal films This apparatus was used to prepare a series of high T sub c A-15 structure superconducting films in the binary system Nb-Ge. The effect on T sub c of a variety of substrate materials was investigated. An extensive series of ternary alloys were also prepared. Conditions allowing the brittle high T sub c (approximately 18 K) A-15 structure superconductor Nb3A1 to be prepared in a low T sub c but ductile form were found. Some of the ways that the ductile (bcc) form can be cold worked or machined are described. Measurements of rate of transformation of cold worked bcc material to the high T sub c A-15 structure with low temperature annealing are given. Preliminary measurements indicate that this material has attractive high field critical current densities.

  6. Residual metallic contamination of transferred chemical vapor deposited graphene.

    PubMed

    Lupina, Grzegorz; Kitzmann, Julia; Costina, Ioan; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Vaziri, Sam; Östling, Mikael; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Kataria, Satender; Gahoi, Amit; Lemme, Max C; Ruhl, Guenther; Zoth, Guenther; Luxenhofer, Oliver; Mehr, Wolfgang

    2015-05-26

    Integration of graphene with Si microelectronics is very appealing by offering a potentially broad range of new functionalities. New materials to be integrated with the Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etching and electrochemical delamination methods with respect to residual submonolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 10(13) atoms/cm(2). These metal impurities appear to be partially mobile upon thermal treatment, as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics, these results reveal that further progress in synthesis, handling, and cleaning of graphene is required to advance electronic and optoelectronic applications. PMID:25853630

  7. Charged impurity-induced scatterings in chemical vapor deposited graphene

    NASA Astrophysics Data System (ADS)

    Li, Ming-Yang; Tang, Chiu-Chun; Ling, D. C.; Li, L. J.; Chi, C. C.; Chen, Jeng-Chung

    2013-12-01

    We investigate the effects of defect scatterings on the electric transport properties of chemical vapor deposited (CVD) graphene by measuring the carrier density dependence of the magneto-conductivity. To clarify the dominant scattering mechanism, we perform extensive measurements on large-area samples with different mobility to exclude the edge effect. We analyze our data with the major scattering mechanisms such as short-range static scatters, short-range screened Coulomb disorders, and weak-localization (WL). We establish that the charged impurities are the predominant scatters because there is a strong correlation between the mobility and the charge impurity density. Near the charge neutral point (CNP), the electron-hole puddles that are induced by the charged impurities enhance the inter-valley scattering, which is favorable for WL observations. Away from the CNP, the charged-impurity-induced scattering is weak because of the effective screening by the charge carriers. As a result, the local static structural defects govern the charge transport. Our findings provide compelling evidence for understanding the scattering mechanisms in graphene and pave the way for the improvement of fabrication techniques to achieve high-quality CVD graphene.

  8. Chemical vapor deposition of mesoporous graphene nanoballs for supercapacitor.

    PubMed

    Lee, Jung-Soo; Kim, Sun-I; Yoon, Jong-Chul; Jang, Ji-Hyun

    2013-07-23

    A mass-producible mesoporous graphene nanoball (MGB) was fabricated via a precursor-assisted chemical vapor deposition (CVD) technique for supercapacitor application. Polystyrene balls and reduced iron created under high temperature and a hydrogen gas environment provide a solid carbon source and a catalyst for graphene growth during the precursor-assisted CVD process, respectively. Carboxylic acid and sulfonic acid functionalization of the polystyrene ball facilitates homogeneous dispersion of the hydrophobic polymer template in the metal precursor solution, thus, resulting in a MGB with a uniform number of graphene layers. The MGB is shown to have a specific surface area of 508 m(2)/g and is mesoporous with a mean mesopore diameter of 4.27 nm. Mesopores are generated by the removal of agglomerated iron domains, permeating down through the soft polystyrene spheres and providing the surface for subsequent graphene growth during the heating process in a hydrogen environment. This technique requires only drop-casting of the precursor/polystyrene solution, allowing for mass-production of multilayer MGBs. The supercapacitor fabricated by the use of the MGB as an electrode demonstrates a specific capacitance of 206 F/g and more than 96% retention of capacitance after 10,000 cycles. The outstanding characteristics of the MGB as an electrode for supercapacitors verify the strong potential for use in energy-related areas. PMID:23782238

  9. Growth of graphene underlayers by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Charlie Johnson, A. T.; Manyala, Ncholu

    2013-11-01

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called "inverted wedding cake" stacking in multilayer graphene growth.

  10. Long distance spin communication in chemical vapour deposited graphene

    NASA Astrophysics Data System (ADS)

    Kamalakar, M. Venkata; Groenveld, Christiaan; Dankert, André; Dash, Saroj P.

    2015-04-01

    Graphene is an ideal medium for long-distance spin communication in future spintronic technologies. So far, the prospect is limited by the smaller sizes of exfoliated graphene flakes and lower spin transport properties of large-area chemical vapour-deposited (CVD) graphene. Here we demonstrate a high spintronic performance in CVD graphene on SiO2/Si substrate at room temperature. We show pure spin transport and precession over long channel lengths extending up to 16 μm with a spin lifetime of 1.2 ns and a spin diffusion length ~6 μm at room temperature. These spin parameters are up to six times higher than previous reports and highest at room temperature for any form of pristine graphene on industrial standard SiO2/Si substrates. Our detailed investigation reinforces the observed performance in CVD graphene over wafer scale and opens up new prospects for the development of lateral spin-based memory and logic applications.

  11. Chemical vapor deposited silica coatings for solar mirror protection

    NASA Technical Reports Server (NTRS)

    Gulino, Daniel A.; Dever, Therese M.; Banholzer, William F.

    1988-01-01

    A variety of techniques is available to apply protective coatings to oxidation susceptible spacecraft components, and each has associated advantages and disadvantages. Film applications by means of chemical vapor deposition (CVD) has the advantage of being able to be applied conformally to objects of irregular shape. For this reason, a study was made of the oxygen plasma durability of thin film (less than 5000 A) silicon dioxide coatings applied by CVD. In these experiments, such coatings were applied to silver mirrors, which are strongly subject to oxidation, and which are proposed for use on the space station solar dynamic power system. Results indicate that such coatings can provide adequate protection without affecting the reflectance of the mirror. Scanning electron micrographs indicated that oxidation of the silver layer did occur at stress crack locations, but this did not affect the measured solar reflectances. Oxidation of the silver did not proceed beyond the immediate location of the crack. Such stress cracks did not occur in thinner silica flims, and hence such films would be desirable for this application.

  12. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    SciTech Connect

    Zubkov, V. I. Kucherova, O. V.; Zubkova, A. V.; Ilyin, V. A.; Afanas'ev, A. V.; Bogdanov, S. A.; Vikharev, A. L.; Butler, J. E.

    2015-10-14

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  13. Photo Initiated Chemical Vapour Deposition To Increase Polymer Hydrophobicity.

    PubMed

    Bérard, Ariane; Patience, Gregory S; Chouinard, Gérald; Tavares, Jason R

    2016-01-01

    Apple growers face new challenges to produce organic apples and now many cover orchards with high-density polyethylene (HDPE) nets to exclude insects, rather than spraying insecticides. However, rainwater- associated wetness favours the development of apple scabs, Venturia inaequalis, whose lesions accumulate on the leaves and fruit causing unsightly spots. Treating the nets with a superhydrophobic coating should reduce the amount of water that passes through the net. Here we treat HDPE and polyethylene terephthalate using photo-initiated chemical vapour deposition (PICVD). We placed polymer samples in a quartz tube and passed a mixture of H2 and CO through it while a UVC lamp (254 nm) illuminated the surface. After the treatment, the contact angle between water droplets and the surface increased by an average of 20°. The contact angle of samples placed 70 cm from the entrance of the tube was higher than those at 45 cm and 20 cm. The PICVD-treated HDPE achieved a contact angle of 124°. Nets spray coated with a solvent-based commercial product achieved 180° but water ingress was, surprisingly, higher than that for nets with a lower contact angle. PMID:27531048

  14. Formation of amorphous metal alloys by chemical vapor deposition

    DOEpatents

    Mullendore, A.W.

    1988-03-18

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

  15. Formation of amorphous metal alloys by chemical vapor deposition

    DOEpatents

    Mullendore, Arthur W.

    1990-01-01

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures or organometallic compounds and metalloid hydrides, e.g., transition metal carbonyl such as nickel carbonyl, and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit.

  16. All-Hot-Wire Chemical Vapor Deposition a-Si:H Solar Cells

    SciTech Connect

    Iwaniczko, E.; Wang, Q.; Xu, Y.; Nelson, B. P.; Mahan, A. H.; Crandall, R. S.; Branz, H. M.

    2000-01-01

    Efficient hydrogenated amorphous silicon (a-Si:H) nip solar cells have been fabricated with all doped and undoped a-Si:H layers deposited by hot-wire chemical vapor deposition (HWCVD). The total deposition time of all layers, except the top ITO-contact, is less than 4 minutes.

  17. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    NASA Technical Reports Server (NTRS)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  18. Properties of chemical vapor infiltration diamond deposited in a diamond powder matrix

    SciTech Connect

    Panitz, J.K.G.; Tallant, D.R.; Hills, C.R.; Staley, D.J.

    1993-12-31

    Densifying non-mined diamond powder precursors with diamond produced by chemical vapor infiltration (CVI) is an attractive approach for forming thick diamond deposits that avoids many potential manufacturability problems associated with predominantly chemical vapor deposition (CVD) processes. The authors have developed two techniques: electrophoretic deposition and screen printing, to form nonmined diamond powder precursors on substrates. They then densify these precursors in a hot filament assisted reactor. Analysis indicated that a hot filament assisted chemical vapor infiltration process forms intergranular diamond deposits with properties that are to some degree different from predominantly hot-filament-assisted CVD material.

  19. Pulling bubbles from a bath

    NASA Astrophysics Data System (ADS)

    Kao, Justin C. T.; Blakemore, Andrea L.; Hosoi, A. E.

    2010-06-01

    Deposition of bubbles on a wall withdrawn from a liquid bath is a phenomenon observed in many everyday situations—the foam lacing left behind in an emptied glass of beer, for instance. It is also of importance to the many industrial processes where uniformity of coating is desirable. We report work on an idealized version of this situation, the drag-out of a single bubble in Landau-Levich-Derjaguin flow. We find that a well-defined critical wall speed exists, separating the two regimes of bubble persistence at the meniscus and bubble deposition on the moving wall. Experiments show that this transition occurs at Ca∗˜Bo0.73. A similar result is obtained theoretically by balancing viscous stresses and gravity.

  20. Development of a new direct liquid injection system for nanoparticle deposition by chemical vapor deposition using nanoparticle solutions.

    PubMed

    Vervaele, Mattias; De Roo, Bert; Deschaume, Olivier; Rajala, Markku; Guillon, Herve; Sousa, Marilyne; Bartic, Carmen; Van Haesendonck, Chris; Seo, Jin Won; Locquet, Jean-Pierre

    2016-02-01

    Nanoparticles of different materials are already in use for many applications. In some applications, these nanoparticles need to be deposited on a substrate in a fast and reproducible way. We have developed a new direct liquid injection system for nanoparticle deposition by chemical vapor deposition using a liquid nanoparticle precursor. The system was designed to deposit nanoparticles in a controlled and reproducible way by using two direct liquid injectors to deliver nanoparticles to the system. The nanoparticle solution is first evaporated and then the nanoparticles flow onto a substrate inside the vacuum chamber. To allow injection and evaporation of the liquid, a direct liquid injection and vaporization system are mounted on top of the process chamber. The deposition of the nanoparticles is controlled by parameters such as deposition temperature, partial pressure of the gases, and flow rate of the nanoparticle suspension. The concentration of the deposited nanoparticles can be varied simply by changing the flow rate and deposition time. We demonstrate the capabilities of this system using gold nanoparticles. The selected suspension flow rates were varied between 0.25 and 1 g/min. AFM analysis of the deposited samples showed that the aggregation of gold nanoparticles is well controlled by the flow and deposition parameters. PMID:26931885

  1. Development of a new direct liquid injection system for nanoparticle deposition by chemical vapor deposition using nanoparticle solutions

    NASA Astrophysics Data System (ADS)

    Vervaele, Mattias; De Roo, Bert; Deschaume, Olivier; Rajala, Markku; Guillon, Herve; Sousa, Marilyne; Bartic, Carmen; Van Haesendonck, Chris; Seo, Jin Won; Locquet, Jean-Pierre

    2016-02-01

    Nanoparticles of different materials are already in use for many applications. In some applications, these nanoparticles need to be deposited on a substrate in a fast and reproducible way. We have developed a new direct liquid injection system for nanoparticle deposition by chemical vapor deposition using a liquid nanoparticle precursor. The system was designed to deposit nanoparticles in a controlled and reproducible way by using two direct liquid injectors to deliver nanoparticles to the system. The nanoparticle solution is first evaporated and then the nanoparticles flow onto a substrate inside the vacuum chamber. To allow injection and evaporation of the liquid, a direct liquid injection and vaporization system are mounted on top of the process chamber. The deposition of the nanoparticles is controlled by parameters such as deposition temperature, partial pressure of the gases, and flow rate of the nanoparticle suspension. The concentration of the deposited nanoparticles can be varied simply by changing the flow rate and deposition time. We demonstrate the capabilities of this system using gold nanoparticles. The selected suspension flow rates were varied between 0.25 and 1 g/min. AFM analysis of the deposited samples showed that the aggregation of gold nanoparticles is well controlled by the flow and deposition parameters.

  2. Single crystal diamond detectors grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Tuvè, C.; Angelone, M.; Bellini, V.; Balducci, A.; Donato, M. G.; Faggio, G.; Marinelli, M.; Messina, G.; Milani, E.; Morgada, M. E.; Pillon, M.; Potenza, R.; Pucella, G.; Russo, G.; Santangelo, S.; Scoccia, M.; Sutera, C.; Tucciarone, A.; Verona-Rinati, G.

    2007-01-01

    The detection properties of heteropitaxial (polycrystalline, pCVD) and homoepitaxial (single crystal, scCVD) diamond films grown by microwave chemical vapor deposition (CVD) in the Laboratories of Roma "Tor Vergata" University are reported. The pCVD diamond detectors were tested with α-particles from different sources and 12C ions produced by 15 MV Tandem accelerator at Southern National Laboratories (LNS) in Catania (Italy). pCVDs were also used to monitor 14 MeV neutrons produced by the D-T plasma at Joint European Torus (JET), Culham, U.K. The limit of pCVDs is the poor energy resolution. To overcome this problem, we developed scCVD diamonds using the same reactor parameters that optimized pCVD diamonds. scCVD were grown on a low cost (1 0 0) HPHT single crystal substrate. A detector 110 μm thick was tested under α-particles and under 14 MeV neutron irradiation. The charge collection efficiency spectrum measured under irradiation with a triple α-particle source shows three clearly resolved peaks, with an energy resolution of about 1.1%. The measured spectra under neutron irradiation show a well separated C(n,α0)9Be12 reaction peak with an energy spread of 0.5 MeV for 14.8 MeV neutrons and 0.3 MeV for 14.1 MeV neutrons, which are fully compatible with the energy spread of the incident neutron beams.

  3. Carbon Nanotubes/Nanofibers by Plasma Enhanced Chemical Vapour Deposition

    NASA Technical Reports Server (NTRS)

    Teo, K. B. K.; Hash, D. B.; Bell, M. S.; Chhowalla, M.; Cruden, B. A.; Amaratunga, G. A. J.; Meyyappan, M.; Milne, W. I.

    2005-01-01

    Plasma enhanced chemical vapour deposition (PECVD) has been recently used for the production of vertically aligned carbon nanotubedfibers (CN) directly on substrates. These structures are potentially important technologically as electron field emitters (e.g. microguns, microwave amplifiers, displays), nanoelectrodes for sensors, filter media, superhydrophobic surfaces and thermal interface materials for microelectronics. A parametric study on the growth of CN grown by glow discharge dc-PECVD is presented. In this technique, a substrate containing thin film Ni catalyst is exposed to C2H2 and NH3 gases at 700 C. Without plasma, this process is essentially thermal CVD which produces curly spaghetti-like CN as seen in Fig. 1 (a). With the plasma generated by biasing the substrate at -6OOV, we observed that the CN align vertically during growth as shown in Fig. l(b), and that the magnitude of the applied substrate bias affects the degree of alignment. The thickness of the thin film Ni catalyst was found to determine the average diameter and inversely the length of the CN. The yield and density of the CN were controlled by the use of different diffusion barrier materials under the Ni catalyst. Patterned CN growth [Fig. l(c)], with la variation in CN diameter of 4.1% and 6.3% respectively, is achieved by lithographically defining the Ni thin film prior to growth. The shape of the structures could be varied from very straight nanotube-like to conical tip-like nanofibers by increasing the ratio of C2H2 in the gas flow. Due to the plasma decomposition of C2H2, amorphous carbon (a-C) is an undesirable byproduct which could coat the substrate during CN growth. Using a combination of depth profiled Auger electron spectroscopy to study the substrate and in-situ mass spectroscopy to examine gas phase neutrals and ions, the optimal conditions for a-C free growth of CN is determined.

  4. Review of chemical vapor deposition of graphene and related applications.

    PubMed

    Zhang, Yi; Zhang, Luyao; Zhou, Chongwu

    2013-10-15

    Since its debut in 2004, graphene has attracted enormous interest because of its unique properties. Chemical vapor deposition (CVD) has emerged as an important method for the preparation and production of graphene for various applications since the method was first reported in 2008/2009. In this Account, we review graphene CVD on various metal substrates with an emphasis on Ni and Cu. In addition, we discuss important and representative applications of graphene formed by CVD, including as flexible transparent conductors for organic photovoltaic cells and in field effect transistors. Growth on polycrystalline Ni films leads to both monolayer and few-layer graphene with multiple layers because of the grain boundaries on Ni films. We can greatly increase the percentage of monolayer graphene by using single-crystalline Ni(111) substrates, which have smooth surface and no grain boundaries. Due to the extremely low solubility of carbon in Cu, Cu has emerged as an even better catalyst for the growth of monolayer graphene with a high percentage of single layers. The growth of graphene on Cu is a surface reaction. As a result, only one layer of graphene can form on a Cu surface, in contrast with Ni, where more than one layer can form through carbon segregation and precipitation. We also describe a method for transferring graphene sheets from the metal using polymethyl methacrylate (PMMA). CVD graphene has electronic properties that are potentially valuable in a number of applications. For example, few-layer graphene grown on Ni can function as flexible transparent conductive electrodes for organic photovoltaic cells. In addition, because we can synthesize large-grain graphene on Cu foil, such large-grain graphene has electronic properties suitable for use in field effect transistors. PMID:23480816

  5. Properties of hydrogenated amorphous silicon prepared by chemical vapor deposition

    SciTech Connect

    Ellis, F.B. Jr.; Gordon, R.G.; Paul, W.; Yacobi, B.G.

    1984-06-15

    Hydrogenated amorphous silicon (a-Si:H) films were prepared by chemical vapor deposition (CVD) from mixtures of silane, disilane, trisilane, and higher polysilanes in hydrogen carrier gas at 1 atm total pressure, at substrate temperatures from 420--530 /sup 0/C. Experimental parameters are explained and properties as a function of these parameters are shown. The measurements include hydrogen content (by IR), optical, electrical, and photovoltaic properties of the material. In most respects, the CVD material closely resembles the a-Si:H usually prepared by glow discharge. The following differences have been noted: (1) the CVD a-Si:H shows no IR absorption at 840--850 cm/sup -1/, which is consistent with the expected better thermal stability of the CVD material because of the much higher substrate temperatures in the CVD process than in the glow discharge process. (2) The band gap of CVD a-Si:H is lower by about 0.1 eV than glow discharge a-Si:H of the same hydrogen content. Thus, the band gap of CVD a-Si:H is better matched to the solar spectrum than is glow discharge a-Si:H. (3) All three IR absorption bands due to hydrogen are about 20% narrower in the CVD a-Si:H, suggesting a simpler structure. (4) The temperature dependence of the dark conductivity of CVD a-Si:H fits a curve for a single activation energy, in contrast to the more complicated temperature dependence often found in glow discharge a-Si:H, in which two different activation energies are seen at high and low temperatures. This suggests that the conduction mechanism is also simpler in the CVD a-Si:H.

  6. Magnetorheological finishing of chemical-vapor deposited zinc sulfide via chemically and mechanically modified fluids

    DOE PAGESBeta

    Salzman, Sivan; Romanofsky, Henry J.; Giannechini, Lucca J.; Jacobs, Stephen D.; Lambropoulos, John C.

    2016-02-19

    In this study, we describe the anisotropy in the material removal rate (MRR) of the polycrystalline, chemical-vapor deposited zinc sulfide (ZnS).We define the polycrystalline anisotropy via microhardness and chemical erosion tests for four crystallographic orientations of ZnS: (100), (110), (111), and (311). Anisotropy in the MRR was studied under magnetorheological finishing (MRF) conditions. Three chemically and mechanically modified magnetorheological (MR) fluids at pH values of 4, 5, and 6 were used to test the MRR variations among the four single-crystal planes. When polishing the single-crystal planes and the polycrystalline with pH 5 and pH 6MR fluids, variations were found inmore » the MRR among the four single-crystal planes and surface artifacts were observed on the polycrystalline material. When polishing the single-crystal planes and the polycrystalline with the modified MR fluid at pH 4, however, minimal variation was observed in the MRR among the four orientations and a reduction in surface artifacts was achieved on the polycrystalline material.« less

  7. Magnetorheological finishing of chemical-vapor deposited zinc sulfide via chemically and mechanically modified fluids.

    PubMed

    Salzman, Sivan; Romanofsky, Henry J; Giannechini, Lucca J; Jacobs, Stephen D; Lambropoulos, John C

    2016-02-20

    We describe the anisotropy in the material removal rate (MRR) of the polycrystalline, chemical-vapor deposited zinc sulfide (ZnS). We define the polycrystalline anisotropy via microhardness and chemical erosion tests for four crystallographic orientations of ZnS: (100), (110), (111), and (311). Anisotropy in the MRR was studied under magnetorheological finishing (MRF) conditions. Three chemically and mechanically modified magnetorheological (MR) fluids at pH values of 4, 5, and 6 were used to test the MRR variations among the four single-crystal planes. When polishing the single-crystal planes and the polycrystalline with pH 5 and pH 6 MR fluids, variations were found in the MRR among the four single-crystal planes and surface artifacts were observed on the polycrystalline material. When polishing the single-crystal planes and the polycrystalline with the modified MR fluid at pH 4, however, minimal variation was observed in the MRR among the four orientations and a reduction in surface artifacts was achieved on the polycrystalline material. PMID:26906603

  8. Electrical, optical and morphological properties of chemically deposited nanostructured tungsten disulfide thin films

    NASA Astrophysics Data System (ADS)

    Chate, P. A.; Sathe, D. J.; Hankare, P. P.

    2013-02-01

    Nanocrystalline tungsten disulfide thin films have been deposited on non-conducting glass substrates using triethanolamine bath. The film samples were characterized by X-ray diffraction, scanning electron microscopy, optical spectroscopy and thermoelectric techniques. The crystalline phase of the deposited sample was of hexagonal wurtzite-type. The optical band gap energy of the sample was found to be 1.46 eV. The electrical conductivity of the film sample was found to be in the order of 10-3 (Ω cm)-1. Thermoelectric measurement showed n-type of conductivity. The configuration of fabricated cell is n-WS2 | NaI (2 M) + I2 (1 M) | C(graphite). The efficiency of the cell was found to be 1.29%.

  9. Metal organic chemical vapor deposition of environmental barrier coatings for the inhibition of solid deposit formation from heated jet fuel

    NASA Astrophysics Data System (ADS)

    Mohan, Arun Ram

    Solid deposit formation from jet fuel compromises the fuel handling system of an aviation turbine engine and increases the maintenance downtime of an aircraft. The deposit formation process depends upon the composition of the fuel, the nature of metal surfaces that come in contact with the heated fuel and the operating conditions of the engine. The objective of the study is to investigate the effect of substrate surfaces on the amount and nature of solid deposits in the intermediate regime where both autoxidation and pyrolysis play an important role in deposit formation. A particular focus has been directed to examining the effectiveness of barrier coatings produced by metal organic chemical vapor deposition (MOCVD) on metal surfaces for inhibiting the solid deposit formation from jet fuel degradation. In the first part of the experimental study, a commercial Jet-A sample was stressed in a flow reactor on seven different metal surfaces: AISI316, AISI 321, AISI 304, AISI 347, Inconel 600, Inconel 718, Inconel 750X and FecrAlloy. Examination of deposits by thermal and microscopic analysis shows that the solid deposit formation is influenced by the interaction of organosulfur compounds and autoxidation products with the metal surfaces. The nature of metal sulfides was predicted by Fe-Ni-S ternary phase diagram. Thermal stressing on uncoated surfaces produced coke deposits with varying degree of structural order. They are hydrogen-rich and structurally disordered deposits, spherulitic deposits, small carbon particles with relatively ordered structures and large platelets of ordered carbon structures formed by metal catalysis. In the second part of the study, environmental barrier coatings were deposited on tube surfaces to inhibit solid deposit formation from the heated fuel. A new CVD system was configured by the proper choice of components for mass flow, pressure and temperature control in the reactor. A bubbler was designed to deliver the precursor into the reactor

  10. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOEpatents

    Pitts, J. Roland; Tracy, C. Edwin; King, David E.; Stanley, James T.

    1994-01-01

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.

  11. High rate chemical vapor deposition of carbon films using fluorinated gases

    DOEpatents

    Stafford, Byron L.; Tracy, C. Edwin; Benson, David K.; Nelson, Arthur J.

    1993-01-01

    A high rate, low-temperature deposition of amorphous carbon films is produced by PE-CVD in the presence of a fluorinated or other halide gas. The deposition can be performed at less than 100.degree. C., including ambient room temperature, with a radio frequency plasma assisted chemical vapor deposition process. With less than 6.5 atomic percent fluorine incorporated into the amorphous carbon film, the characteristics of the carbon film, including index of refraction, mass density, optical clarity, and chemical resistance are within fifteen percent (15%) of those characteristics for pure amorphous carbon films, but the deposition rates are high.

  12. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOEpatents

    Pitts, J.R.; Tracy, C.E.; King, D.E.; Stanley, J.T.

    1994-09-13

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

  13. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    SciTech Connect

    Bartlome, Richard De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe; Amanatides, Eleftherios; Mataras, Dimitrios

    2015-05-28

    We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.

  14. Numerical modeling of chemical vapor deposition (CVD) in a horizontal reactor

    NASA Technical Reports Server (NTRS)

    Sheikholeslami, M. Z.; Jasinski, T.; Fretz, K. W.

    1988-01-01

    In the present numerical prediction of the deposition rate of silicon from silane in a CVD process, the conservation equations for mass, momentum, energy, and chemical species are solved on a staggered grid using the SIMPLE algorithm, while the rate of chemical reactions in the gas phase and on the susceptor surface is obtained from an Arrhenius rate equation. Predicted deposition rates as a function of position along the susceptor with and without the gas phase chemical reaction are compared with the available experimental and numerical data; agreement is excellent except at the leading edge of the susceptor, where the deposition rate is overpredicted.

  15. Schottky diodes and ohmic contacts formed by thermally assisted photolytic laser chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Braichotte, D.; van den Bergh, H.

    Thermally assisted photolytic laser chemical vapor deposition (LCVD) of platinum on n-doped gallium arsenide, a two-phase hybrid scheme for the production of Schottky diodes, is discussed. The low temperature photolytic deposits of the initial slow phase contain a nonnegligible fraction of organic ligand material and tend to be amorphous. In the second phase, light absorption of the photolytically deposited metal causes a temperature rise which facilitates the removal of ligand material from the deposit, and which is sufficient for fast pyrolytic LCVD. Measurements of the influence of light intensity, in addition to metalorganic and inert gas pressure, on the deposition rates in both phases are obtained.

  16. Characteristics of epitaxial garnets grown by CVD using single metal alloy sources. [Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Besser, P. J.; Hamilton, T. N.; Mee, J. E.; Stermer, R. L.

    1974-01-01

    Single metal alloys have been explored as the cation source in the chemical vapor deposition (CVD) of iron garnets. Growth of good quality single crystal garnet films containing as many as five different cations has been achieved over a wide range of deposition conditions. The relationship of film composition to alloy compositions and deposition conditions has been determined for several materials. By proper choice of the alloy composition and the deposition conditions, uncrazed deposits were grown on (111) gadolinium gallium garnet (GGG) substrates. Data on physical, magnetic and optical properties of representative films is presented and discussed.

  17. Modeling free convective gravitational effects in chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Stinespring, C. D.; Annen, K. D.

    1987-01-01

    In this paper, a combined fluid-mechanics, mass-transport, and chemistry model describing CVD in an open-tube atmospheric-pressure flow reactor is developed. The model allows gas-phase reactions to proceed to equilibrium and accounts for finite reaction rates at the surface of the deposition substrate. This model is a useful intermediate step toward a model employing fully rate-limited chemistry. The model is used to predict the effects of free convection on flow patterns, temperature and species-concentration profiles, and local deposition rates for silicon deposited by silane pyrolysis. These results are discussed in terms of implications for CVD of silicon and other compounds, microgravity studies, and techniques for testing and validating the model.

  18. Laser/Plasma/Chemical-Vapor Deposition Of Diamond

    NASA Technical Reports Server (NTRS)

    Hsu, George C.

    1989-01-01

    Proposed process for deposition of diamond films includes combination of plasma induced in hydrocarbon feed gas by microwave radiation and irradiation of plasma and substrate by lasers. Deposition of graphite suppressed. Reaction chamber irradiated at wavelength favoring polymerization of CH2 radical into powders filtered out of gas. CH3 radicals, having desired sp3 configuration, remains in gas to serve as precursors for deposition. Feed gas selected to favor formation of CH3 radicals; candidates include CH4, C2H4, C2H2, and C2H6. Plasma produced by applying sufficient power at frequency of 2.45 GHz and adjusting density of gas to obtain electron kinetic energies around 100 eV in low-pressure, low-temperature regime.

  19. Metalorganic chemical vapor deposition of gallium nitride on sacrificial substrates

    NASA Astrophysics Data System (ADS)

    Fenwick, William Edward

    GaN-based light emitting diodes (LEDs) face several challenges if the technology is to continue to make a significant impact in general illumination, and on technology that has become known as solid state lighting (SSL). Two of the most pressing challenges for the continued penetration of SSL into traditional lighting applications are efficacy and total lumens from the device, and their related cost. The development of alternative substrate technologies is a promising avenue toward addressing both of these challenges, as both GaN-based device technology and the associated metalorganic chemical vapor deposition (MOCVD) technology are already relatively mature technologies with a well-understood cost base. Zinc oxide (ZnO) and silicon (Si) are among the most promising alternative substrates for GaN epitaxy. These substrates offer the ability to access both higher efficacy and lumen devices (ZnO) at a much reduced cost. This work focuses on the development of MOCVD growth processes to yield high quality GaN-based materials and devices on both ZnO and Si. ZnO is a promising substrate for growth of low defect-density GaN because of its similar lattice constant and thermal expansion coefficient. The major hurdles for GaN growth on ZnO are the instability of the substrate in a hydrogen atmosphere, which is typical of nitride growth conditions, and the inter-diffusion of zinc and oxygen from the substrate into the GaN-based epitaxial layer. A process was developed for the MOCVD growth of GaN and InxGa 1-xN on ZnO that attempted to address these issues. The structural and optical properties of these films were studied using various techniques. X-ray diffraction (XRD) showed the growth of wurtzite GaN on ZnO, and room-temperature photoluminescence (RT-PL) showed near band-edge luminescence from the GaN and InxGa1-xN layers. However, high zinc and oxygen concentrations due to interdiffusion near the ZnO substrate remained an issue; therefore, the diffusion of zinc and oxygen

  20. Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition

    SciTech Connect

    Kurapov, Denis; Reiss, Jennifer; Trinh, David H.; Hultman, Lars; Schneider, Jochen M.

    2007-07-15

    Alumina thin films were deposited onto tempered hot working steel substrates from an AlCl{sub 3}-O{sub 2}-Ar-H{sub 2} gas mixture by plasma-assisted chemical vapor deposition. The normalized ion flux was varied during deposition through changes in precursor content while keeping the cathode voltage and the total pressure constant. As the precursor content in the total gas mixture was increased from 0.8% to 5.8%, the deposition rate increased 12-fold, while the normalized ion flux decreased by approximately 90%. The constitution, morphology, impurity incorporation, and the elastic properties of the alumina thin films were found to depend on the normalized ion flux. These changes in structure, composition, and properties induced by normalized ion flux may be understood by considering mechanisms related to surface and bulk diffusion.

  1. Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

    DOEpatents

    Lackey, Jr., Walter J.; Caputo, Anthony J.

    1986-01-01

    A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

  2. Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique

    SciTech Connect

    Baumann, H.; Sah, R.E.

    2005-05-01

    We have used backscattering spectrometry and {sup 15}N({sup 1}H,{alpha},{gamma}){sup 12}C nuclear reaction analysis techniques to study in detail the variation in the composition of silicon oxynitride films with deposition parameters. The films were deposited using 2.45 GHz electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) technique from mixtures of precursors argon, nitrous oxide, and silane at deposition temperature 90 deg. C. The deposition pressure and nitrous oxide-to-silane gas flow rates ratio have been found to have a pronounced influence on the composition of the films. When the deposition pressure was varied for a given nitrous oxide-to-silane gas flow ratio, the amount of silicon and nitrogen increased with the deposition pressure, while the amount of oxygen decreased. For a given deposition pressure, the amount of incorporated nitrogen and hydrogen decreased while that of oxygen increased with increasing nitrous oxide-to-silane gas flow rates ratio. For nitrous oxide-to-silane gas flow ratio of 5, we obtained films which contained neither chemically bonded nor nonbonded nitrogen atoms as revealed by the results of infrared spectroscopy, backscattering spectrometry, and nuclear reaction analysis. Our results demonstrate the nitrogen-free nearly stoichiometric silicon dioxide films can be prepared from a mixture of precursors argon, nitrous oxide, and silane at low substrate temperature using high-density PECVD technique. This avoids the use of a hazardous and an often forbidden pair of silane and oxygen gases in a plasma reactor.

  3. Application of pulsed-uv laser Raman spectroscopy to chemical vapor deposition

    SciTech Connect

    Hargis, P.J. Jr.

    1981-01-01

    Raman detection limits obtained with a KrF laser excitation source were comparable to those obtained by laser-induced fluorescence and photofragment emission spectroscopy under chemical vapor deposition conditions.

  4. A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

    NASA Technical Reports Server (NTRS)

    Gokoglu, S. A.; Kuczmarski, M. A.

    1993-01-01

    Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

  5. Fabrication of lightweight ceramic mirrors by means of a chemical vapor deposition process

    NASA Technical Reports Server (NTRS)

    Goela, Jitendra S. (Inventor); Taylor, Raymond L. (Inventor)

    1991-01-01

    A process to fabricate lightweigth ceramic mirrors, and in particular, silicon/silicon carbide mirrors, involves three chemical vapor deposition steps: one to produce the mirror faceplate, the second to form the lightweight backstructure which is deposited integral to the faceplate, and the third and final step which results in the deposition of a layer of optical grade material, for example, silicon, onto the front surface of the faceplate. The mirror figure and finish are fabricated into this latter material.

  6. Chemical vapor deposition of fluorine-doped zinc oxide

    DOEpatents

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  7. Direct chemical vapor deposition of graphene on dielectric surfaces

    DOEpatents

    Zhang, Yuegang; Ismach, Ariel

    2014-04-29

    A substrate is provided that has a metallic layer on a substrate surface of a substrate. A film made of a two dimensional (2-D) material, such as graphene, is deposited on a metallic surface of the metallic layer. The metallic layer is dewet and/or removed to provide the film on the substrate surface.

  8. Optical emission study of a doped diamond deposition process by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Rayar, M.; Supiot, P.; Veis, P.; Gicquel, A.

    2008-08-01

    Standard H2/CH4/B2H6 plasmas (99% of H2 and 1% of CH4, with 0-100ppm of B2H6 added) used for doped diamond film growth are studied by optical emission spectroscopy in order to gain a better understanding of the influence of boron species on the gas phase chemistry. Only two boron species are detected under our experimental conditions (9/15/23Wcm-3 average microwave power density values), and the emission spectra used for studies reported here are B(S1/22-P1/2,3/202) and BH [AΠ1-XΣ+1(0,0)]. Variations of their respective emission intensities as a function of the ratio B /C, the boron to carbon ratio in the gas mixture, are reported. We confirmed that the plasma parameters (Tg, Te, and ne) are not affected by the introduction of diborane, and the number densities of B atoms and BH radical species were estimated from experimental measurements. The results are compared to those obtained from a zero-dimensional chemical kinetic model where two groups of reactions are considered: (1) BHx+H ↔BHx -1+H2 (x=1-3) by analogy with the well-known equilibrium CHx+H set of reactions, which occurs, in particular, in diamond deposition reactors; and (2) from conventional organic chemistry, the set of reactions involving boron species: BHx+C2H2 (x =0-1). The results clearly show that the model based on hydrogen and boron hydrides reactions alone is not consistent with the experimental results, while it is so when taking into account both sets of reactions. Once an upper limit for the boron species number densities has been estimated, axial profiles are calculated on the basis of the plasma model results obtained previously in Laboratoire d'Ingénierie des Matériaux et des Hautes Pressions, and significant differences in trends for different boron species are found. At the plasma-to-substrate boundary, [BH] and [B] drop off in contrast to [BH2], which shows little decrease, and [BH3], which shows little increase, in this region.

  9. Dopant gas effect on silicon chemical vapor depositions: A surface potential model

    NASA Technical Reports Server (NTRS)

    Chang, C. A.

    1975-01-01

    A surface potential model is proposed to consistently explain the known dopant gas effects on silicon chemical vapor deposition. This model predicts that the effects of the same dopant gases on the diamond deposition rate using methane and carbon tetrachloride should be opposite and similar to those of silane, respectively. Available data are in agreement with this prediction.

  10. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    PubMed

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors. PMID:27174318

  11. Low temperature junction growth using hot-wire chemical vapor deposition

    DOEpatents

    Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

    2014-02-04

    A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

  12. Chemical vapor deposition of W-Si-N and W-B-N

    DOEpatents

    Fleming, James G.; Roherty-Osmun, Elizabeth Lynn; Smith, Paul M.; Custer, Jonathan S.; Jones, Ronald V.; Nicolet, Marc-A.; Madar, Roland; Bernard, Claude

    1999-01-01

    A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

  13. Chemical vapor deposition of W-Si-N and W-B-N

    DOEpatents

    Fleming, J.G.; Roherty-Osmun, E.L.; Smith, P.M.; Custer, J.S.; Jones, R.V.; Nicolet, M.; Madar, R.; Bernard, C.

    1999-06-29

    A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.

  14. Reduced chemical warfare agent sorption in polyurethane-painted surfaces via plasma-enhanced chemical vapor deposition of perfluoroalkanes.

    PubMed

    Gordon, Wesley O; Peterson, Gregory W; Durke, Erin M

    2015-04-01

    Perfluoralkalation via plasma chemical vapor deposition has been used to improve hydrophobicity of surfaces. We have investigated this technique to improve the resistance of commercial polyurethane coatings to chemicals, such as chemical warfare agents. The reported results indicate the surface treatment minimizes the spread of agent droplets and the sorption of agent into the coating. The improvement in resistance is likely due to reduction of the coating's surface free energy via fluorine incorporation, but may also have contributing effects from surface morphology changes. The data indicates that plasma-based surface modifications may have utility in improving chemical resistance of commercial coatings. PMID:25775244

  15. Influence of deposition conditions on mechanical properties of low-pressure chemical vapor deposited low-stress silicon nitride films

    NASA Astrophysics Data System (ADS)

    Toivola, Yvete; Thurn, Jeremy; Cook, Robert F.; Cibuzar, Greg; Roberts, Kevin

    2003-11-01

    The effect of deposition temperature, deposition pressure, or input gas ratio (SiH2Cl2:NH3) on film stress was determined for low-pressure chemical vapor deposited silicon nitride films. Wafer curvature measurements were performed for films deposited on single crystal silicon and amorphous silica wafer substrates to determine film stress σdep, biaxial modulus Ef+, and coefficient of thermal expansion αf. Apparent plane strain film modulus Ēf' and hardness H were measured using depth-sensing indentation. Ellipsometry was used to measure film thickness tf and refractive index n. Infrared spectroscopy, x-ray photoelectron spectroscopy (XPS), forward recoil energy spectroscopy (FReS), and Rutherford backscattering spectroscopy (RBS) experiments were performed to determine film composition. Although film deposition stress varied from -135 MPa (compressive) to 235 MPa (tensile) Ef+, Ēf', H, and αf remained nearly constant. Infrared spectroscopy resolved only Si-N species for all films, and results from FReS on three films confirmed that the hydrogen content was negligible. RBS and XPS indicated that Si/N increased with increased compressive σdep. Ellipsometry and RBS indicated that all films were silicon-rich, to a greater extent with increased compressive σdep. As RBS indicated that atomic density decreased with increased compressive deposition stress, it was concluded that the deposition conditions changed both thermal and intrinsic deposition stress for all films. In particular, intrinsic stress was tensile, and became increasingly tensile for increased Si/N and decreased atomic density. Assuming thermal stress was similar for all films examined here, the intrinsic stress must have varied from changes dependent on the deposition conditions.

  16. Metal-organic chemical vapor deposition of aluminum oxide thin films via pyrolysis of dimethylaluminum isopropoxide

    SciTech Connect

    Schmidt, Benjamin W.; Sweet, William J. III; Rogers, Bridget R.; Bierschenk, Eric J.; Gren, Cameron K.; Hanusa, Timothy P.

    2010-03-15

    Metal-organic chemical vapor deposited aluminum oxide films were produced via pyrolysis of dimethylaluminum isopropoxide in a high vacuum reaction chamber in the 417-659 deg. C temperature range. Deposited films contained aluminum, oxygen, and carbon, and the carbon-to-aluminum ratio increased with increased deposition temperature. Aluminum-carbon bonding was observed in films deposited at 659 deg. C by x-ray photoelectron spectroscopy, but not in films deposited at 417 deg. C. The apparent activation energy in the surface reaction controlled regime was 91 kJ/mol. The O/Al and C/Al ratios in the deposited films were greater and less than, respectively, the ratios predicted by the stoichiometry of the precursor. Flux analysis of the deposition process suggested that the observed film stoichiometries could be explained by the participation of oxygen-containing background gases present in the reactor at its base pressure.

  17. Synthesis of multifilament silicon carbide fibers by chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Revankar, Vithal; Hlavacek, Vladimir

    1991-01-01

    A process for development of clean silicon carbide fiber with a small diameter and high reliability is presented. An experimental evaluation of operating conditions for SiC fibers of good mechanical properties and devising an efficient technique which will prevent welding together of individual filaments are discussed. The thermodynamic analysis of a different precursor system was analyzed vigorously. Thermodynamically optimum conditions for stoichiometric SiC deposit were obtained.

  18. Transient stages in the chemical vapor deposition of silicon carbide.

    PubMed

    Chollon, Georges; Langlais, Francis; Placide, Maud

    2011-09-01

    Transient CVD experiments were simulated by varying continuously the deposition temperature or the initial gas flow rates (Q(MTS) or Q(H2)). Their consequences on the physicochemical properties of the coatings have been first examined. The adhesion of SiC/SiC bilayers containing these "transient interphases" (phi(Tr)) was investigated by scratch testing. For transient stages resulting from a decrease of Q(MTS) or T, free silicon can be co-deposited in proportions depending on alpha = Q(H2)/Q(MTS), T and P. This phenomenon is related to the high reactivity of the Si bearing species and is activated by high T and P and low a values. In this case, the continuous covalent bonding through the Si-rich interphases preserves the adhesion between the two SiC layers. Transient stages resulting from a decrease of Q(H2) lead first to larger and columnar SiC grains and finally to the deposition of anisotropic carbon, due to the formation of unsaturated hydrocarbons in the gas phase. The interphases with the highest carbon concentrations and thicknesses lead to delamination and local chipping of the outer SiC layer. The poor shear strength of these continuous and anisotropic layers is detrimental to the adherence of the bilayers. PMID:22097579

  19. Chemical, microscopic, and ultrastructural characterization of the mineral deposits in tumoral calcinosis

    SciTech Connect

    Boskey, A.L.; Vigorita, V.J.; Sencer, O.; Stuchin, S.A.; Lane, J.M.

    1983-09-01

    The presence of hydroxyapatite has been determined based on ultrastructure, X-ray diffraction, electron diffraction, and chemical analysis, and confirmed by microprobe analysis in multiple deposits surgically excised from four unrelated patients with tumoral calcinosis. The chemical composition of each of the mineralized deposits resembled bone, rather than dermis, in mineral, uronic acid, total lipid, and complexed acidic phospholipid composition. No collagen abnormalities were detected. However, all of these deposits differed from normal bone mineral, being heavily mineralized and containing larger, more perfect hydroxyapatite crystals. Ultrastructurally, the crystals were both extracellular and within mononuclear cells in close proximity to dilated rough endoplasmic reticulum.

  20. Chemical vapor deposition and characterization of titanium dioxide thin films

    NASA Astrophysics Data System (ADS)

    Gilmer, David Christopher

    1998-12-01

    The continued drive to decrease the size and increase the speed of micro-electronic Metal-Oxide-Semiconductor (MOS) devices is hampered by some of the properties of the SiOsb2 gate dielectric. This research has focused on the CVD of TiOsb2 thin films to replace SiOsb2 as the gate dielectric in MOS capacitors and transistors. The relationship of CVD parameters and post-deposition anneal treatments to the physical and electrical properties of thin films of TiOsb2 has been studied. Structural and electrical characterization of TiOsb2 films grown from the CVD precursors tetraisopropoxotitanium (IV) (TTIP) and TTIP plus Hsb2O is described in Chapter 3. Both types of deposition produced stoichiometric TiOsb2 films comprised of polycrystalline anatase, but the interface properties were dramatically degraded when water vapor was added. Films grown with TTIP in the presence of Hsb2O contained greater than 50% more hydrogen than films grown using only TTIP and the hydrogen content of films deposited in both wet and dry TTIP environments decreased sharply with a post deposition Osb2 anneal. A significant thickness variation of the dielectric constant was observed which could be explained by an interfacial oxide and the finite accumulation thickness. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 38, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 4 discusses the low temperature CVD of crystalline TiOsb2 thin films deposited using the precursor tetranitratotitanium (IV), TNT, which produces crystalline TiOsb2 films of the anatase phase in UHV-CVD at temperatures as low as 184sp°C. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 17, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 5 describes the results of a comparison of physical and electrical properties between TiOsb2 films grown via LPCVD using

  1. Second harmonic generation in ZnO thin films fabricated by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Liu, C. Y.; Zhang, B. P.; Binh, N. T.; Segawa, Y.

    2004-07-01

    Second harmonic generation (SHG) from ZnO thin films fabricated by metalorganic chemical vapor deposition (MOCVD) technique was carried out. By comparing the second harmonic signal generated in a series of ZnO films with different deposition temperatures, we conclude that a significant part of second harmonic signal is generated at the film deposited with appropriate temperature. The second-order susceptibility tensor χ(2)zzz=9.2 pm/V was deduced for a film deposited at 250 °C.

  2. Localized planarization of optical damage using laser-based chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Matthews, Manyalibo J.; Elhadj, Selim; Guss, Gabe M.; Sridharan, Arun; Nielsen, Norman D.; Yoo, Jae-Hyuck; Lee, Daeho; Grigoropoulos, Costas

    2013-11-01

    We present a method to repair damaged optics using laser-based chemical vapor deposition (L-CVD). A CO2 laser is used to heat damaged silica regions and polymerize a gas precursor to form SiO2. Measured deposition rates and morphologies agree well with finite element modeling of a two-phase reaction. Along with optimizing deposition rates and morphology, we also show that the deposited silica is structurally identical to high-grade silica substrate and possesses high UV laser damage thresholds. Successful application of such a method could reduce processing costs, extend optic lifetime, and lead to more damage resistant laser optics used in high power applications.

  3. Industrial Scale Synthesis of Carbon Nanotubes Via Fluidized Bed Chemical Vapor Deposition: A Senior Design Project

    ERIC Educational Resources Information Center

    Smith, York R.; Fuchs, Alan; Meyyappan, M.

    2010-01-01

    Senior year chemical engineering students designed a process to produce 10 000 tonnes per annum of single wall carbon nanotubes (SWNT) and also conducted bench-top experiments to synthesize SWNTs via fluidized bed chemical vapor deposition techniques. This was an excellent pedagogical experience because it related to the type of real world design…

  4. Deposition of microcrystalline silicon prepared by hot-wire chemical-vapor deposition: The influence of the deposition parameters on the material properties and solar cell performance

    NASA Astrophysics Data System (ADS)

    Klein, Stefan; Finger, Friedhelm; Carius, Reinhard; Stutzmann, Martin

    2005-07-01

    Microcrystalline silicon (μc-Si:H) of superior quality can be prepared using the hot-wire chemical-vapor deposition method (HWCVD). At a low substrate temperature (TS) of 185 °C excellent material properties and solar cell performance were obtained with spin densities of 6×1015cm-3 and solar cell efficiencies up to 9.4%, respectively. In this study we have systematically investigated the influence of various deposition parameters on the deposition rate and the material properties. For this purpose, thin films and solar cells were prepared at specific substrate and filament temperatures and deposition pressures (pD), covering the complete range from amorphous to highly crystalline material by adjusting the silane concentration. The influence of these deposition parameters on the chemical reactions at the filament and in the gas phase qualitatively explains the behavior of the structural composition and the formation of defects. In particular, we propose that the deposition rate is determined by the production of reactive species at the filament and a particular atomic-hydrogen-to-silicon ratio is found at the microcrystalline/amorphous transition. The structural, optical, and electronic properties were studied using Raman and infrared spectroscopies, optical-absorption measurements, electron-spin resonance, and dark and photoconductivities. These experiments show that higher TS and pD lead to a deterioration of the material quality, i.e., much higher defect densities, oxygen contaminations, and SiH absorption at 2100cm-1. Similar to plasma enhanced chemical-vapor deposition material, μc-Si:H solar cells prepared with HW i layers show increasing open circuit voltages (Voc) with increasing silane concentration and best performance is achieved near the transition to amorphous growth. Such solar cells prepared at low TS exhibit very high Voc up to 600 mV and fill factors above 70% with i layers prepared by HWCVD.

  5. WORKER REMOVING SLAG FROM THE MOLTEN METAL BATH IN THE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    WORKER REMOVING SLAG FROM THE MOLTEN METAL BATH IN THE ELECTRIC FURNACE AFTER ADDING A CHEMICAL COAGULANT TO FORCE IT TO THE SURFACE. - Southern Ductile Casting Company, Melting, 2217 Carolina Avenue, Bessemer, Jefferson County, AL

  6. Selective epitaxial Si based layers and TiSi 2 deposition by integrated chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Regolini, J. L.; Margail, J.; Bodnar, S.; Maury, D.; Morin, C.

    1996-07-01

    High performance IC manufacturing requirements, such as large diameter wafer uniformity, reproducibility, throughput and reliability can be fulfilled by commercial integrated processing, single wafer cluster tools. This paper presents results obtained on an industrial cluster reactor for 200 mm wafers by combining epitaxial silicon related materials and selective deposition of TiSi 2. Low temperature epitaxial Si and SiGe alloys are studied for buried thin layers used in CMOS and HBT devices. The doping profile abruptness for B and P are within SIMS resolution limits. TheTiSi 2/Si selective deposition is also investigated, sequentially and in situ, as a technique for future salicidedS/D with a reduction in technological steps and interface contamination. Statistical electrical results obtained using 0.35 and 0.25 μm CMOS technologies in which the CVD silicide deposition is tested, are presented and compared with the standard salicide technique.

  7. Chemical and physical sputtering effects on the surface morphology of carbon films grown by plasma chemical vapor deposition

    SciTech Connect

    Vazquez, Luis

    2009-08-01

    We have studied the influence of chemical and physical sputtering on the surface morphology of hydrogenated carbon films deposited on silicon substrates by bias-enhanced electron cyclotron resonance chemical vapor deposition. Atomic force microscopy based power spectrum density (PSD) and roughness analysis have been used to investigate the film morphology. This study has been possible due to the appropriate choice of the experimental variables, in particular, gas mixture, resulting in either nitrogen-free (a-C:H) or nitrogenated carbon (a-CN:H) films, and substrate bias (V{sub b}). Under these conditions, chemical sputtering is present for a-CN:H deposition but it is negligible for a-C:H film growth, while physical sputtering processes appear for both systems for V{sub b}<=-85 V. When physical sputtering does not operate, the film growth with simultaneous chemical sputtering leads to a characteristic a-CN:H granular surface morphology. Furthermore, PSD analysis reveals that a spatial correlation of the a-CN:H film surface roughness, up to distances approx300 nm, becomes a fingerprint of the coexistence of growth and chemical erosion processes on the film morphology. However, once physical sputtering takes place, the influence of chemical sputtering by reactive nitrogen species on the final surface morphology becomes negligible and both a-CN:H and a-C:H film morphologies are ultrasmooth.

  8. Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007

    SciTech Connect

    Atwater, H. A.

    2007-11-01

    This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen.

  9. Prediction of Chemical Vapor Deposition Rates on Monofilaments and Its Implications for Fiber Properties

    NASA Technical Reports Server (NTRS)

    Gokoglu, S. A.; Kuczmarski, M.; Veitch, L. C.

    1992-01-01

    Deposition rates are predicted in a cylindrical upflow reactor designed for chemical vapor deposition (CVD) on monofilaments. Deposition of silicon from silane in a hydrogen carrier gas is chosen as a relevant example. The effects of gas and surface chemistry are studied in a two-dimensional axisymmetric flow field for this chemically well-studied system. Model predictions are compared to experimental CVD rate measurements. The differences in some physical and chemical phenomena between such small diameter (about 150 microns) fiber substrates and other typical CVD substrates are highlighted. The influence of the Soret mass transport mechanism is determined to be extraordinarily significant. The difficulties associated with the accurate measurement and control of the fiber temperature are discussed. Model prediction sensitivities are investigated with respect to fiber temperatures, fiber radii, Soret transport, and chemical kinetic parameters. The implications of the predicted instantaneous rates are discussed relative to the desired fiber properties for both the batch and the continuous processes.

  10. Facile synthesis 3D flexible core-shell graphene/glass fiber via chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yang, Cheng; Xu, Yuanyuan; Zhang, Chao; Sun, Zhencui; Chen, Chuansong; Li, Xiuhua; Jiang, Shouzhen; Man, Baoyuan

    2014-08-01

    Direct deposition of graphene layers on the flexible glass fiber surface to form the three-dimensional (3D) core-shell structures is offered using a two-heating reactor chemical vapor deposition system. The two-heating reactor is utilized to offer sufficient, well-proportioned floating C atoms and provide a facile way for low-temperature deposition. Graphene layers, which are controlled by changing the growth time, can be grown on the surface of wire-type glass fiber with the diameter from 30 nm to 120 um. The core-shell graphene/glass fiber deposition mechanism is proposed, suggesting that the 3D graphene films can be deposited on any proper wire-type substrates. These results open a facile way for direct and high-efficiency deposition of the transfer-free graphene layers on the low-temperature dielectric wire-type substrates.

  11. Bath for electrolytic reduction of alumina and method therefor

    DOEpatents

    Brown, Craig W.; Brooks, Richard J.; Frizzle, Patrick B.; Juric, Drago D.

    2002-11-26

    An electrolytic bath for use during the electrolytic reduction of alumina to aluminum. The bath comprises a molten electrolyte having the following ingredients: (a) AlF.sub.3 and at least one salt selected from the group consisting of NaF, KF, and LiF; and (b) about 0.004 wt. % to about 0.2 wt. %, based on total weight of the molten electrolyte, of at least one transition metal or at least one compound of the metal or both. The compound may be, for example, a fluoride, oxide, or carbonate. The metal can be nickel, iron, copper, cobalt, or molybdenum. The bath can be employed in a combination that includes a vessel for containing the bath and at least one non-consumable anode and at least one dimensionally stable cathode in the bath. Employing the bath of the present invention during electrolytic reduction of alumina to aluminum can improve the wetting of aluminum on a cathode by reducing or eliminating the formation of non-metallic deposits on the cathode. Removing sulfur from the bath can also minimize cathode deposits. Aluminum formed on the cathode can be removed directly from the cathode.

  12. Deposition Technique For Chemical Free Black Coatings On Metals

    NASA Astrophysics Data System (ADS)

    Carton, J. G.; Cobbe, N.; O'Donoghue, J.; Pambaguian, L.; Norman, A.; Liedtke, V.; McCaul, T.

    2012-07-01

    Coatings having specific thermo-optical properties are necessary to manage the temperature equilibrium in space hardware. Incumbent black body coatings have a need to extend their operating temperature as well as increase the range of substrate materials that can be coated; in addition, issues relating to outgassing can limit the application of black body coatings. In this paper a relatively new coating technology, CoBlast, is used to deposit material on to titanium substrates, to produce a black body surface; SolarBlack. CoBlast, replaces the oxide layer of reactive metals with a fused thin surface. The process is uniquely non-complex, requiring no thermal input, no wet chemistry and is performed in an ambient temperature and pressure environment. Thermo optical and micro-structure analysis of SolarBlack was completed and the characterisation results including thermo cycling, up to 700°C, are discussed.

  13. Preparation and analysis of chemically gradient functional bioceramic coating formed by pulsed laser deposition.

    PubMed

    Rajesh, P; Muraleedharan, C V; Sureshbabu, S; Komath, Manoj; Varma, Harikrishna

    2012-02-01

    Bioactive ceramic coatings based on calcium phosphates yield better functionality in the human body for a variety of metallic implant devices including orthopaedic and dental prostheses. In the present study chemically and hence functionally gradient bioceramic coating was obtained by pulsed laser deposition method. Calcium phosphate bioactive ceramic coatings based on hydroxyapatite (HA) and tricalcium phosphate (TCP) were deposited over titanium substrate to produce gradation in physico-chemical characteristics and in vitro dissolution behaviour. Sintered targets of HA and α-TCP were deposited in a multi target laser deposition system. The obtained deposits were characterized by X-ray diffraction, fourier transform infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray analysis. Inductively coupled plasma spectroscopy was used to estimate the in vitro dissolution behaviour of coatings. The variation in mechanical property of the gradient layer was evaluated through scratch test and micro-indentation hardness. The bioactivity was examined in vitro with respect to the ability of HA layer to form on the surface as a result of contact with simulated body fluid. It could be inferred that chemically gradient functional bioceramic coating can be produced by laser deposition of multiple sintered targets with variable chemical composition. PMID:22105226

  14. Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

    1996-01-01

    Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

  15. Chemical Weathering of New Pyroclastic Deposits from Mt. Merapi (Java), Indonesia

    SciTech Connect

    Fiantis, Dian; Nelson, Malik; Van Ranst, Eric; Shamshudin, Josup; Qafoku, Nikolla

    2009-09-01

    Java Island, Indonesia with abundant amount of pyroclastic deposits is located in the very active and dynamic Pacific Ring of Fires. Studying the geochemical weathering indices of these pyroclastic deposits is important to get a clear picture about weathering profiles on deposits resulting from the eruption of Mt. Merapi. Immediately after the first phase of the eruption (March to June 2006), moist and leached pyroclastic deposits were collected. These pyroclastic deposits were found to be composed of volcanic glass, plagioclase feldspar in various proportions, orthopyroxene, clinopyroxene, olivine, amphibole, and titanomagnetite. Total elemental composition of the bulk samples (including trace elements and heavy metals) were determined by wet chemical methods and X-ray fluorescence (XRF) analyses. Weathering of the pyroclastic deposits was studied using various weathering indices. The Ruxton ratio, weathering index of Parker, Vought resudual index and chemical index of weathering of moist pyroclastic are lower than the leached sample but the alteration indices (chemical and plagioclase) are slightly higher in the moist compared to the leached pyroclastic deposits.

  16. [Immersion in a bath despite a safety bath chair].

    PubMed

    Christensen, H B; Lange, A

    1989-01-01

    A case of submersion is described. A mother left her child aged 8 1/2 months sitting in a "safety bath chair" in a full bath and found the child lying under the water shortly afterwards. The infant was hypotonic for a brief period but rapidly recovered without sequelae. Use of a "safety bath chair" gives a false sense of security and its use is warned against. PMID:2911907

  17. Deposition of High Purity Parylene- F Using Low Pressure Low Temperature Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Wu, P. K.; Yang, G.-R.; You, L.; Mathur, D.; Cocoziello, A.; Lang, C.-I.; Moore, J. A.; Lu, T.-M.; Bakru, H.

    1997-08-01

    Parylene-F, poly(tetrafluoro-para-xylylene) (PA-F), has potential applications in microelectronics because of its high thermal stability and low dielectric constant. We found that a new precursor, 1,4-bis(trifluoromethyl) benzene (TFB) with a trace presence of α,α‧-dibromo-α,α,α‧,α‧-tetrafluoro-p-xylene (DBX), can be used to produce PA-F films. PA-F films from this precursor are produced using a reaction line and a conventional deposition system. This process is simpler than previously reported processes and produces PA-F films with less impurities. The dielectric constant of the PA-F films produced by this process is 2.25 ± 0.05 at 1 MHz. The deposition process and the material properties of the PA-F films produced are presented.

  18. Etching Effects During the Chemical Vapor Deposition of (100) Diamond

    SciTech Connect

    Battaile, C.C.; Srolovitz, D.J.; Oleinik, I.I.; Pettifor, D.G.; Sutton, A.P.; Harris, S.J.; Butler, J.E.

    1999-08-02

    Current theories of CVD growth on (100) diamond are unable to account for the numerous experimental observations of slow-growing, locally smooth (100)(2x1) films. In this paper they use quantum mechanical calculations of diamond surface thermochemistry and atomic-scale kinetic Monte Carlo simulations of deposition to investigate the efficacy of preferential etching as a mechanism that can help to reconcile this discrepancy. This etching mechanism allows for the removal of undercoordinated carbon atoms from the diamond surface. In the absence of etching, simulated growth on the (100)(2x1) surface is faster than growth on the (110) and (111) surfaces, and the (100) surface is atomically rough. When etching is included in the simulations, the (100) growth rates decrease to values near those observed experimentally, while the rates of growth on the other surfaces remain largely unaffected and similar to those observed experimentally. In addition, the etching mechanism promotes the growth of smooth (100) surface regions in agreement with numerous scanning probe studies.

  19. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, K.C.; Kodas, T.T.

    1994-01-11

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

  20. Structural Evolution of SiC Films During Plasma-Assisted Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Ding, Siye; Yan, Guanchao; Zhu, Xiaodong; Zhou, Haiyang

    2009-04-01

    Evolution of chemical bonding configurations for the films deposited from hexamethyldisiloxane (HMDSO) diluted with H2 during plasma assisted chemical vapour deposition is investigated. In the experiment a small amount of CH4 was added to adjust the plasma environment and modify the structure of the deposited films. The measurements of Raman spectroscopy and X-ray diffraction (XRD) revealed the production of 6H-SiC embedded in the amorphous matrix without the input of CH4. As CH4 was introduced into the deposition reaction, the transition of 6H-SiC to cubic SiC in the films took place, and also the film surfaces changed from a structure of ellipsoids to cauliflower-like shapes. With a further increase of CH4 in the flow ratio, the obtained films varied from Si-C bonding dominant to a sp2/sp3 carbon-rich composition.

  1. Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Hazbun, Ramsey; Hart, John; Hickey, Ryan; Ghosh, Ayana; Fernando, Nalin; Zollner, Stefan; Adam, Thomas N.; Kolodzey, James

    2016-06-01

    The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. The layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, Atomic Force Microscopy, and secondary ion mass spectrometry. Based on this characterization, high quality single crystal silicon epitaxy was observed. Tetrasilane was found to produce higher growth rates relative to lower order silanes, with the ability to deposit crystalline Si at low temperatures (T=400 °C), with significant amorphous growth and reactivity measured as low as 325 °C, indicating the suitability of tetrasilane for low temperature chemical vapor deposition such as for SiGeSn alloys.

  2. Composition and submicron structure of chemically deposited Cu2Se-In2Se3 films

    NASA Astrophysics Data System (ADS)

    Markov, V. F.; Tulenin, S. S.; Maskaeva, L. N.; Kuznetsov, M. V.; Barbin, N. M.

    2012-03-01

    Films of substitutional solid solutions of the Cu2Se-In2Se3 system containing up to 7.5 at. % In have been obtained by chemical deposition from aqueous media. The composition, structure, and morphology of the films have been studied. Data of X-ray diffraction and X-ray photoelectron spectroscopy showed that copper in the solid solution occurs in a single-valence state (Cu+). The deposited layers possess a globular morphology and are nanostructured.

  3. Low temperature growth of vertically aligned carbon nanotubes by thermal chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, Cheol Jin; Son, Kwon Hee; Park, Jeunghee; Yoo, Jae Eun; Huh, Yoon; Lee, Jeong Yong

    2001-04-01

    Vertically well-aligned carbon nanotubes (CNTs) are grown on Fe-deposited silicon oxide substrate at 550°C by thermal chemical vapor deposition of C 2H 2 gas. We employed two-stage heating technique that the reactants heated at 850°C in the first zone flow into the second zone maintained at 550°C for CNT growth. The CNTs have bamboo structure, closed tip, and defective graphite sheets.

  4. Growth model of bamboo-shaped carbon nanotubes by thermal chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, Cheol Jin; Park, Jeunghee

    2000-11-01

    Vertically aligned carbon nanotubes were grown on iron-deposited silicon oxide substrate by thermal chemical vapor deposition of acetylene. The carbon nanotubes have no encapsulated iron particles at the closed tip and a bamboo structure in which the curvature of compartment layers is directed to the tip. A base growth model is suggested for the bamboo-shaped carbon nanotubes grown under our experimental conditions.

  5. The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC

    SciTech Connect

    Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V.

    1998-05-01

    Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

  6. Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

    SciTech Connect

    Anderson, T.

    1999-10-20

    This report describes research performed by the University of Florida during Phase 2 of this subcontract. First, to study CIGS, researchers adapted a contactless, nondestructive technique previously developed for measuring photogenerated excess carrier lifetimes in SOI wafers. This dual-beam optical modulation (DBOM) technique was used to investigate the differences between three alternative methods of depositing CdS (conventional chemical-bath deposition [CBD], metal-organic chemical vapor deposition [MOCVD], and sputtering). Second, a critical assessment of the Cu-In-Se thermochemical and phase diagram data using standard CALPHAD procedures is being performed. The outcome of this research will produce useful information on equilibrium vapor compositions (required annealing ambients, Sex fluxes from effusion cells), phase diagrams (conditions for melt-assisted growth), chemical potentials (driving forces for diffusion and chemical reactions), and consistent solution models (extents of solid solutions and extending phase diagrams). Third, an integrated facility to fabricate CIS PV devices was established that includes migration-enhanced epitaxy (MEE) for deposition of CIS, a rapid thermal processing furnace for absorber film formation, sputtering of ZnO, CBD or MOCVD of CdS, metallization, and pattern definition.

  7. Tunable optoelectronic properties of CBD-CdS thin films via bath temperature alterations

    NASA Astrophysics Data System (ADS)

    Kumarage, W. G. C.; Wijesundera, R. P.; Seneviratne, V. A.; Jayalath, C. P.; Dassanayake, B. S.

    2016-03-01

    The tunability of the band-gap value and electron affinity of the n-CdS by adjusting the growth parameters is very important as it paves the way to improve the efficiency of CdS-based solar cells by adjusting the band lineup with other p-type semiconductors. In this respect, polycrystalline n-CdS thin films were grown on FTO glass substrates at different bath temperatures (40-80 °C) by the chemical bath deposition technique. The structural, morphological and optoelectronic properties of CdS thin films were studied using x-ray diffraction, scanning electron microscopy, UV-Vis spectrometry, profilometry, atomic force microscopy, photoelectrochemical and Mott-Schottky measurements. Absorption measurements reveal that an energy-gap value of n-CdS can be adjusted from 2.27 to 2.57 eV and Mott-Schottky measurements indicate that the flat-band potential is increased from  -699 to  -835 V with respect to a Ag/AgCl electrode by decreasing the deposition bath temperature from 60 to 40 °C. This tunability of optoelectronic properties of n-CdS is very useful for applications in thin film solar cells and other devices.

  8. Very narrow SiGe/Si quantum wells deposited by low-temperature atmospheric pressure chemical vapor deposition

    SciTech Connect

    Gruetzmacher, D.A.; Sedgwick, T.O.; Northrop, G.A.

    1993-05-01

    The optical, structural, and electrical properties of very narrow SiGe quantum wells grown by {open_quotes}ultra-clean{close_quotes} atmospheric pressure chemical vapor deposition (APCVD) are investigated. X-ray reflectivity data reveal abrupt interfaces with a root-mean-square roughness of not more than 0.2 nm. For the first time narrow (4.3 meV) excitonic photoluminescence (PL) spectra were obtained from APCVD grown samples containing SiGe wells with 12.5% to 32.5% Ge. For the narrowest wells PL doublets are observed which are attributed to atomic steps at the SiGe/Si interfaces. The Pl and x-ray diffractometry data show that process deposition control for well and barrier width is within the monolayer range. Resonant tunneling diodes fabricated with 2.5-mm-wide Si{sub 0.75}Ge{sub 0.25} wells show world record peak to valley ratios of 4.2. Magneto-transport measurements performed at high magnetic fields of two-dimensional hole gases exhibit pronounced Hall plateaus and well-defined Shubnikov de Hass oscillations, indicating high material quality. The results give evidence that atmospheric pressure chemical vapor deposition, which relies on gas switching sequences of the reactive gases in a hydrogen ambience, is able to produce interface abruptness comparable if not better than reported by any other technique. 22 refs., 7 figs.

  9. Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

    NASA Technical Reports Server (NTRS)

    Cardelino, Carlos

    1999-01-01

    A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

  10. Hydrogenated amorphous silicon films produced by chemical vapor deposition: Final report

    SciTech Connect

    Not Available

    1987-04-01

    Hydrogenated amorphous silicon (a-Si:H) is a technologically important semiconductor, well-suited for solar photovoltaic energy conversion and thin film device applications. While the glow discharge technique is widely used for the deposition of a-Si:H films, this work is focused on the use of the chemical vapor deposition (CVD) technique, i.e., the thermal decomposition of disilane and higher silanes, for the deposition of a-Si:H films. A simple technique for the preparation of disilane and higher silanes by using an electric discharge in monosilane under atmospheric pressure has been developed, and the discharge product can be used directly for the deposition process. The important parameters of the CVD process including the substrate temperature, the composition and flow rate of the reaction mixture, and the nature of the diluent gas for disilane, have also been investigated. The deposition rate of a-Si:H films in a helium atmosphere is considerably higher than that in a hydrogen atmosphere, and the CVD process in a helium atmosphere is well-suited for the deposition of thick a-Si:H films. The a-Si:H films deposited under various conditions have been characterized by the photoconductivity, dissolution rate, optical absorption, mechanical stress, gap state density, minority carrier diffusion length, and stability measurements. On the basis of these measurements, a-Si:H films deposited by the thermal decomposition of disilane in a helium atmosphere exhibit better structural and electronic properties than those deposited in a hydrogen atmosphere.

  11. Chemical-vapor deposition of complex oxides: materials and process development

    SciTech Connect

    Muenchausen, R.

    1996-11-01

    This is the final report of a six-month, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL) part of the Advanced Materials Laboratory (AML). The demand for higher performance and lower cost in electronics is driving the need for advanced materials and consequent process integration. Ceramic thin-film technology is becoming more important in the manufacture of microelectronic devices, photovoltaics, optoelectronics, magneto-optics, sensors, microwave, and radio frequency communication devices, and high-Tc superconducting tapes. A flexible processing approach for potential large-scale manufacturing of novel electronic ceramic thin films is desirable. Current thin- film deposition technologies based on physical vapor-deposition techniques are limited in scale potential and have limited control of processing parameters. The lack of control over multiple process parameters inhibits the versatility and reproducibility of the physical vapor deposition processes applied to complex oxides. Chemical vapor deposition is emerging as a viable approach for large- scale manufacturing of electronic materials. Specifically, the ability to control more processing parameters with chemical vapor deposition than with other processing techniques provides the reliability and material property reproducibility required by manufacturing. This project sought to investigate the chemical vapor deposition of complex oxides.

  12. Analysis of mass transport in an atmospheric pressure remote plasma-enhanced chemical vapor deposition process

    SciTech Connect

    Cardoso, R. P.; Belmonte, T.; Henrion, G.; Gries, T.; Tixhon, E.

    2010-01-15

    In remote microwave plasma enhanced chemical vapor deposition processes operated at atmospheric pressure, high deposition rates are associated with the localization of precursors on the treated surface. We show that mass transport can be advantageously ensured by convection for the heavier precursor, the lighter being driven by turbulent diffusion toward the surface. Transport by laminar diffusion is negligible. The use of high flow rates is mandatory to have a good mixing of species. The use of an injection nozzle with micrometer-sized hole enables us to define accurately the reaction area between the reactive species. The localization of the flow leads to high deposition rates by confining the reactive species over a small area, the deposition yield being therefore very high. Increasing the temperature modifies nonlinearly the deposition rates and the coating properties.

  13. CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.-C.; Banger, Kulbinder K.; Harris, Jerry D.; Hepp, Aloysius F.

    2004-01-01

    Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) prepared in-house. Films with either (112) or (204/220) preferred orientation were obtained, and compositional analysis showed that (112)-oriented films contained more copper than (204/220)-oriented films. Using X-ray diffraction, the signature of chalcopyrite structure was often confirmed for (112)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always accompanied by a secondary phase, which was identified as an unknown In-rich compound from the results of post-growth annealing, etching experiments, and Raman spectroscopic data. By increasing Cu to In ratio in the film, (112)-oriented films were obtained with a maximum grain size of about 0.5 micrometers, and their X-ray diffractions did not show any observable signature of the In secondary phase. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 omega cm and 30 omega cm, and an optical band gap of 1.46eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

  14. CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael; Banger, Kal; Harris, Jerry; Hepp, Aloysius

    2003-01-01

    Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) which were prepared in-house. Films with either (112) or (204/220) preferred orientation, had a chalcopyrite structure, and (112)-oriented films contained more copper than (204/220)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always In-rich and were accompanied by a secondary phase. From the results of post-growth annealing, etching experiments, and Raman spectroscopic data, the secondary phase was identified as an In-rich compound. On the contrary, (112)-oriented films were always obtained with a minimal amount of the secondary phase, and had a maximum grain size of about 0.5 micron. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 and 30 Omega-cm, and an optical band gap of approximately 1.46 eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

  15. The chemical evolution of a travertine-depositing stream: geochemical processes and mass transfer reactions

    USGS Publications Warehouse

    Lorah, M.M.; Herman, J.S.

    1988-01-01

    Focuses on quantiatively defining the chemical changes occurring in Falling Spring Creek, a travertine-depositing stream located in Alleghany County, Virgina. The processes of CO2 outgassing and calcite precipitation or dissolution control the chemical evolution of the stream. Physical evidence for calcite precipitation exists in the travertine deposits which are first observed immediately above the waterfall and extend for at least 1.0 km below the falls. Net calcite precipitation occurs at all times of the year but is greatest during low-flow conditions in the summer and early fall. -from Authors

  16. Comparison of the chemical characteristics of the uranium deposits of the Morrison Formation in the Grants uranium region, New Mexico

    USGS Publications Warehouse

    Spirakis, C.S.; Pierson, C.T.

    1983-01-01

    Statistical treatment of the chemical data of samples from the northeast Church Rock area, Ruby deposit, Mariano Lake deposit, and the Ambrosia Lake district indicates that primary ore-forming processes concentrated copper, iron, magnesium, manganese, molybdenum, selenium, vanadium, yttrium, arsenic, organic carbon, and sulfur, along with uranium. A barium halo that is associated with all of these deposits formed from secondary processes. Calcium and strontium were also enriched in the ores by secondary processes. Comparison of the chemical characteristics of the redistributed deposits in the Church Rock district to the primary deposits in the Grants uranium region indicates that calcium, manganese, strontium, yttrium, copper, iron, magnesium, molybdenum, lead, selenium, and vanadium are separated from uranium during redistribution of the deposits in the Church Rock area. Comparisons of the chemical characteristics of the Church Rock deposits and the secondary deposits at Ambrosia Lake suggest some differences in the processes that were involved in the genesis of the redistributed deposits in these two areas.

  17. Enhanced Bactericidal Activity of Silver Thin Films Deposited via Aerosol-Assisted Chemical Vapor Deposition.

    PubMed

    Ponja, Sapna D; Sehmi, Sandeep K; Allan, Elaine; MacRobert, Alexander J; Parkin, Ivan P; Carmalt, Claire J

    2015-12-30

    Silver thin films were deposited on SiO2-barrier-coated float glass, fluorine-doped tin oxide (FTO) glass, Activ glass, and TiO2-coated float glass via AACVD using silver nitrate at 350 °C. The films were annealed at 600 °C and analyzed by X-ray powder diffraction, X-ray photoelectron spectroscopy, UV/vis/near-IR spectroscopy, and scanning electron microscopy. All the films were crystalline, and the silver was present in its elemental form and of nanometer dimension. The antibacterial activity of these samples was tested against Escherichia coli and Staphylococcus aureus in the dark and under UV light (365 nm). All Ag-deposited films reduced the numbers of E. coli by 99.9% within 6 h and the numbers of S. aureus by 99.9% within only 2 h. FTO/Ag reduced bacterial numbers of E. coli to below the detection limit after 60 min and caused a 99.9% reduction of S. aureus within only 15 min of UV irradiation. Activ/Ag reduced the numbers of S. aureus by 66.6% after 60 min and TiO2/Ag killed 99.9% of S. aureus within 60 min of UV exposure. More remarkably, we observed a 99.9% reduction in the numbers of E. coli within 6 h and the numbers of S. aureus within 4 h in the dark using our novel TiO2/Ag system. PMID:26632854

  18. Development of buffer layers by chemical solution deposition for YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Akin, Yalcin

    Short length YBCO coated conductors have been fabricated by vacuum thin film deposition techniques. However, the fabrication process increases the cost, and makes them impractical to use for commercial applications even if they are fabricated in kilometer lengths. YBCO coated conductors could be available in the market with a cheaper price by developing non-vacuum deposition techniques. The objective of this research was to investigate development of buffer layers by chemical solution deposition technique for YBCO coated conductors. Buffer layer structures are mainly used to prevent metal ion diffusion, and to reduce the lattice mismatch between YBCO and the metallic substrate. The technical approach, which was adapted here, is the reel-to-reel sol-gel dip coating process to fabricate long length coatings by developing buffer layers' chemical solutions. Rolling assisted biaxially textured Ni substrates were used for deposition of buffer layers. Cold rolled Ni strips were heat-treated at certain conditions to form biaxially textured structure, which became templates for textured growth of buffer layers that is necessary to obtain high critical current in the coated conductors. CeO2 was chosen as a buffer layers because it has been recognized as one of the best cap layers. Growth of highly textured, crack free, pinhole free and smooth CeO2 buffer layers have been demonstrated by chemical solution deposition technique on biaxially textured substrates. A new buffer layer with pseudocubic lattice parameters matching YBCO, (Eu0.893Yb0.107)2O3, was developed for the first time by using a mixture of Eu2O 3 and Yb2O3 to eliminate lattice mismatch, which adversely affected the critical current of the coated conductors. Highly textured (Eu0.893Yb0.107)2O3 buffer layers were deposited on biaxially textured Ni substrates by chemical solution deposition technique. Finally, the growth of CeO2 and (Eu0.893Yb 0.107)2O3 buffer layers were investigated on oxide layers because both Ce

  19. Spectroscopic ellipsometry study of hydrogenated amorphous silicon carbon alloy films deposited by plasma enhanced chemical vapor deposition

    SciTech Connect

    Basa, D. K.; Abbate, G.; Ambrosone, G.; Marino, A.; Coscia, U.

    2010-01-15

    The optical properties of the hydrogenated amorphous silicon carbon alloy films, prepared by plasma enhanced chemical vapor deposition technique from silane and methane gas mixture diluted in helium, have been investigated using variable angle spectroscopic ellipsometry in the photon energy range from 0.73 to 4.59 eV. Tauc-Lorentz model has been employed for the analysis of the optical spectra and it has been demonstrated that the model parameters are correlated with the carbon content as well as to the structural properties of the studied films.

  20. Physical and chemical characteristics and development of the Changuinola peat deposit of northwestern Panama

    SciTech Connect

    Cohen, A.D.; Raymond, R. Jr.; Thayer, G.; Ramirez, A.

    1987-08-01

    A peat deposit occupying over 80 square kilometers, and averaging 8 meters in thickness, was discovered on the Caribbean coast of northwestern Panama near the town of Changuinola. This deposit occurs inland (behind) the present beach-barrier shoreline. It is thickest in the center and thins toward all edges (as if domed). The surface vegetation in the central regions consists primarily of ombrotrophic plants (especially sedges, grasses, Sphagnum, Sagittaria, and various scattered shrubs). Toward the edges, the deposit has a surface cover of more minerotrophic plants (such as swamp-forest trees, ferns, and palms). Petrographic/botanical analysis of the deposit with depth reveals the presence of five peat types (swamp-forest, sedge-grass-fern, Sagittaria et al., Nymphaea et al., and Rhizophora). Typically peats of the thick, central portions of the deposit are very low in ash and sulfur (less than 2% ash and 0.3% sulfur). Ash contents tend to increase abruptly at the base and more gradually toward the edges of the deposit and sulfur contents increasing gradually toward the ocean and bay. Vertical and lateral variations in botanical, chemical, and physical properties of this deposit can be related to factors that have controlled: (1) the surrounding rocks and water chemistry; (2) the source vegetation; and (3) the environments in which these source ingredients were deposited. 3 refs., 10 figs.

  1. Growth of diamond by RF plasma-assisted chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Meyer, Duane E.; Ianno, Natale J.; Woollam, John A.; Swartzlander, A. B.; Nelson, A. J.

    1988-01-01

    A system has been designed and constructed to produce diamond particles by inductively coupled radio-frequency, plasma-assisted chemical vapor deposition. This is a low-pressure, low-temperature process used in an attempt to deposit diamond on substrates of glass, quartz, silicon, nickel, and boron nitride. Several deposition parameters have been varied including substrate temperature, gas concentration, gas pressure, total gas flow rate, RF input power, and deposition time. Analytical methods employed to determine composition and structure of the deposits include scanning electron microscopy, absorption spectroscopy, scanning Auger microprobe spectroscopy, and Raman spectroscopy. Analysis indicates that particles having a thin graphite surface, as well as diamond particles with no surface coatings, have been deposited. Deposits on quartz have exhibited optical bandgaps as high as 4.5 eV. Scanning electron microscopy analysis shows that particles are deposited on a pedestal which Auger spectroscopy indicates to be graphite. This is a phenomenon that has not been previously reported in the literature.

  2. Chemical sputtering by H2+ and H3+ ions during silicon deposition

    NASA Astrophysics Data System (ADS)

    Landheer, K.; Goedheer, W. J.; Poulios, I.; Schropp, R. E. I.; Rath, J. K.

    2016-08-01

    We investigated chemical sputtering of silicon films by Hy+ ions (with y being 2 and 3) in an asymmetric VHF Plasma Enhanced Chemical Vapor Deposition (PECVD) discharge in detail. In experiments with discharges created with pure H2 inlet flows, we observed that more Si was etched from the powered than from the grounded electrode, and this resulted in a net deposition on the grounded electrode. With experimental input data from a power density series of discharges with pure H2 inlet flows, we were able to model this process with a chemical sputtering mechanism. The obtained chemical sputtering yields were (0.3-0.4) ± 0.1 Si atom per bombarding Hy+ ion at the grounded electrode and at the powered electrode the yield ranged from (0.4 to 0.65) ± 0.1. Subsequently, we investigated the role of chemical sputtering during PECVD deposition with a series of silane fractions SF (SF(%) = [SiH4]/[H2]*100) ranging from SF = 0% to 20%. We experimentally observed that the SiHy+ flux is not proportional to SF but decreasing from SF = 3.4% to 20%. This counterintuitive SiHy+ flux trend was partly explained by an increasing chemical sputtering rate with decreasing SF and partly by the reaction between H3+ and SiH4 that forms SiH3+.

  3. Laser chemical vapor deposition of Cu and Ni in integrated circuit repair

    NASA Astrophysics Data System (ADS)

    Leppaevuori, Seppo; Remes, Janne; Moilanen, Hannu

    1996-09-01

    Laser-assisted chemical vapor deposition (LCVD) of nickel from Ni(CO)4 and copper from Cu(hfac)tmvs was utilized in the restructuring of an integrated circuit (IC) interconnection. Nickel and copper lines were deposited on passivated ICs by using a focused Ar+ laser beam to achieve new local rewirings on the chip. Nickel line depositions were carried out over the pressure range of 0.2 to 2.2 mbar of Ni(CO)4 buffered in 200 - 800 mbar He. The typical laser beam scan speed was 24 micrometers per second for both metals. The Cu(hfac)tmvs precursor gas partial pressure was 0.3 mbar buffered in 10 mbar He or H2 and typical laser scan speed was 24 micrometers per second. The morphology and chemical contents of the deposited interconnection microstructures was examined by atomic force microscopy (AFM), optical microscopy and laser ionization mass analysis (LIMA). The LIMA analysis indicated that the deposited copper surface was contaminated but the contamination level decreased when the layer was depth profiled. The deposited Ni lines were found to be pure Ni with only traces of carbon contamination. The utilization of XeCl excimer laser in the cutting of Al and Mo conductor lines and passivation contact via opening for IC modification is also described. LCVD method was successful in numerous different IC failure inspection and circuit modification cases.

  4. Laser-assisted chemical vapor deposition of nickel and laser cutting in integrated circuit restructuring

    NASA Astrophysics Data System (ADS)

    Remes, J.; Moilanen, H.; Leppävuori, S.

    1997-01-01

    Laser-assisted chemical vapor deposition (LCVD) of nickel from Ni(CO)4 has been utilised for the restructuring of integrated circuit (IC) interconnections. Nickel lines were deposited on a SiO2 passivated IC to achieve new local interconnections between integrated circuit structures. Depositions were carried out over the pressure range of 0.2 to 2.2 mbar of pure Ni(CO)4 buffered in 0 to 800 mbar He. Argon ion laser wavelengths of 488 and 514.5 nm, laser power of 50-150 mW and a laser scan speed of 80 μm/s were utilised for the deposition. The morphology and chemical contents of the deposited interconnection microstructures was examined by AFM, optical microscopy and LIMA. The resistivity of the deposited lines was found to be close to the nickel bulk resistivity. The utilisation of Nd: YAG and XeCl excimer lasers in the cutting of Al and Mo conductor lines for integrated circuit modification is also described.

  5. Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

    NASA Technical Reports Server (NTRS)

    Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

    1995-01-01

    Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

  6. Chemical vapor deposition of ZrC within a spouted bed by bromide process

    NASA Astrophysics Data System (ADS)

    Ogawa, T.; Ikawa, K.; Iwamoto, K.

    1981-03-01

    ZrC coatings by chemical vapor deposition were applied to particles of ThO 2, UO 2 and Al 2O 3 at 1623-1873 K. The feed gas mixture consisted of ZrBr 4, CH 4, H 2 and Ar. The results were compared with the calculated chemical equilibria in the Zr-C-H-Br system. It was shown that the weight and composition of the deposit can be calculated by thermochemical analysis after correcting the methane flow rate for a pyrolysis efficiency. Predominant reaction presumably occurring were derived by a mass balance consideration on the calculated equilibrium species. A simplified model of the ZrC deposition was proposed.

  7. Chemical vapour deposition of thermochromic vanadium dioxide thin films for energy efficient glazing

    SciTech Connect

    Warwick, Michael E.A.; Binions, Russell

    2014-06-01

    Vanadium dioxide is a thermochromic material that undergoes a semiconductor to metal transitions at a critical temperature of 68 °C. This phase change from a low temperature monoclinic structure to a higher temperature rutile structure is accompanied by a marked change in infrared reflectivity and change in resistivity. This ability to have a temperature-modulated film that can limit solar heat gain makes vanadium dioxide an ideal candidate for thermochromic energy efficient glazing. In this review we detail the current challenges to such glazing becoming a commercial reality and describe the key chemical vapour deposition technologies being employed in the latest research. - Graphical abstract: Schematic demonstration of the effect of thermochromic glazing on solar radiation (red arrow represents IR radiation, black arrow represents all other solar radiation). - Highlights: • Vanadium dioxide thin films for energy efficient glazing. • Reviews chemical vapour deposition techniques. • Latest results for thin film deposition for vanadium dioxide.

  8. Synthetic Cathinones ("Bath Salts")

    MedlinePlus

    ... still unknown about how synthetic cathinones affect the human brain. Researchers do know that synthetic cathinones are chemically ... of the chemicals in synthetic cathinones affect the human brain. Synthetic cathinones can cause: nosebleeds paranoia increased sociability ...

  9. Development of microbial and chemical MST tools to identify the origin of the faecal pollution in bathing and shellfish harvesting waters in France.

    PubMed

    Gourmelon, M; Caprais, M P; Mieszkin, S; Marti, R; Wéry, N; Jardé, E; Derrien, M; Jadas-Hécart, A; Communal, P Y; Jaffrezic, A; Pourcher, A M

    2010-09-01

    The microbiological quality of coastal or river waters can be affected by faecal pollution from human or animal sources. An efficient MST (Microbial Source Tracking) toolbox consisting of several host-specific markers would therefore be valuable for identifying the origin of the faecal pollution in the environment and thus for effective resource management and remediation. In this multidisciplinary study, after having tested some MST markers on faecal samples, we compared a selection of 17 parameters corresponding to chemical (steroid ratios, caffeine, and synthetic compounds), bacterial (host-specific Bacteroidales, Lactobacillus amylovorus and Bifidobacterium adolescentis) and viral (genotypes I-IV of F-specific bacteriophages, FRNAPH) markers on environmental water samples (n = 33; wastewater, runoff and river waters) with variable Escherichia coli concentrations. Eleven microbial and chemical parameters were finally chosen for our MST toolbox, based on their specificity for particular pollution sources represented by our samples and their detection in river waters impacted by human or animal pollution; these were: the human-specific chemical compounds caffeine, TCEP (tri(2-chloroethyl)phosphate) and benzophenone; the ratios of sitostanol/coprostanol and coprostanol/(coprostanol+24-ethylcopstanol); real-time PCR (Polymerase Chain Reaction) human-specific (HF183 and B. adolescentis), pig-specific (Pig-2-Bac and L. amylovorus) and ruminant-specific (Rum-2-Bac) markers; and human FRNAPH genogroup II. PMID:20709349

  10. Rapid-Thermal-Processed BaTiO3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition

    NASA Astrophysics Data System (ADS)

    Horng, Ray-Hua; Wuu, Dong-Sing; Chan, Shih-Hsiung; Chiang, Ming-Chung; Huang, Tiao-Yuan; Sze, Simon

    1998-03-01

    BaTiO3 thin films deposited on the RuO2(250 nm)/Ru(20 nm)/TiN(200 nm)/Ti(20 nm)/(100)Si substrates by liquid-source misted chemical deposition are reported. The rapid thermal processing (RTP) technique was used for post deposition annealing. It was found that the strain was released and grain size increased for BaTiO3 films treated at high RTP temperature or for long RTP time. The interface between BaTiO3 and the bottom electrode was still sharp for the RTP-treated sample at 950°C. The leakage current density decreases as the RTP temperature increases. It can be decreased to 2.09 nA/cm2 under a supply voltage of 1.5 V. The dielectric constant can be increased up to 250 measured at 100 kHz for the sample treated by RTP at 950°C. The improvements in the BaTiO3 characteristics are due to the fact that RTP can enhance the crystallinity, relax the strain, alleviate the impurities in the films and does not result in significant interdiffusion of the materials.

  11. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    SciTech Connect

    Oliveira, M. H. Jr.; Viana, G. A.; Marques, F. C.; Lima, M. M. Jr. de; Cros, A.; Cantarero, A.

    2010-12-15

    Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH{sub 4}) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

  12. Characteristics of Cobalt Films Deposited by Metal Organic Chemical Vapor Deposition Method Using Dicobalt Hexacarbonyl tert-Butylacetylene

    NASA Astrophysics Data System (ADS)

    Lee, Keunwoo; Park, Taeyong; Lee, Jaesang; Kim, Jinwoo; Kim, Jeongtae; Kwak, Nohjung; Yeom, Seungjin; Jeon, Hyeongtag

    2008-07-01

    Cobalt films were deposited by metal organic chemical vapor deposition (MOCVD) using C12H10O6(Co)2 (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as the Co precursor and H2 reactant gas. The impurity content of the Co films was monitored as a function of the partial pressure of H2 reactant gas. The carbon and oxygen content of as-deposited Co films greatly decrease with the increase of H2 partial pressure, and at H2 partial pressure of 10 Torr and a substrate temperature of 150 °C were 2.8 at. % and less than 1 at. %, respectively. As the H2 partial pressure increased, carbon and oxygen content decreased markedly. Excellent conformality of Co film over 80% was achieved on a patterned wafer with aspect ratio of 15:1, 0.12 µm wide and 1.8 µm deep. The phase transition was analyzed with X-ray diffraction (XRD) depending on RTA temperature. CoSi was observed at 500 °C annealing, and was transformed to CoSi2 at 600 °C annealing. In addition, Auger electron spectroscopy (AES) data showed a 1:2 atomic ratio of Co:Si in the CoSi2 layer.

  13. Chemical Alteration Pathways Resulting in High-Silica Deposits on Mars

    NASA Astrophysics Data System (ADS)

    Yen, A. S.; Gellert, R.; Clark, B. C.; Ming, D. W.; Morris, R. V.; Mittlefehldt, D. W.

    2015-12-01

    The chemical compositions of nearly 1000 targets at the surface of Mars have been established by the cross-calibrated Alpha-Particle X-ray Spectrometers (APXS) onboard the Mars Science Laboratory (MSL) and the two Mars Exploration Rovers (MER). Comparing and contrasting these measurements provides greater insight into martian surface processes than the standalone use of data from an individual mission. For example, the combination of MER and MSL APXS data indicate two distinct pathways for silicate weathering: 1. Open system alteration at circumneutral pH. Fracture-filling deposits in impact breccias at the rim of Endeavour Crater analyzed by the Opportunity rover show the highest SiO2 concentrations at Meridiani Planum (62 wt%) with correlated Si and Al (Si:Al ~0.3). These Mg and Fe-depleted veins have chemical signatures consistent with an Al-rich smectite and likely formed as a precipitate from non-acidic aqueous solutions. Similar high Si and Al deposits found at the Gusev landing site by the Spirit rover were interpreted as montmorillonite. 2. Open system, acid-sulfate alteration. In sharp contrast to Si and Al-rich deposits, a group of high-Si targets have low concentrations of Al. Deposits in Gusev Crater near "Home Plate," a hydrothermal locale with nearby fumarolic deposits, fall into this category. Acid-sulfate processes are likely responsible for mobilizing most other elements, including Al, leaving behind a Si-rich, and generally Ti-rich, residue. Recent high-Si samples (up to 72 wt% SiO2) analyzed by the Curiosity rover exhibit similar chemical patterns, including elevated TiO2 concentrations, suggestive that acidic leaching may also have been an important process in the development of deposits found within Gale Crater. The framework of chemical analyses established through years of Mars surface operations provides the basis against which future measurements by Opportunity, Curiosity and the Mars 2020 rover can be compared.

  14. Deposition kinetics and characterization of stable ionomers from hexamethyldisiloxane and methacrylic acid by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Urstöger, Georg; Resel, Roland; Koller, Georg; Coclite, Anna Maria

    2016-04-01

    A novel ionomer of hexamethyldisiloxane and methacrylic acid was synthesized by plasma enhanced chemical vapor deposition (PECVD). The PECVD process, being solventless, allows mixing of monomers with very different solubilities, and for polymers formed at high deposition rates and with high structural stability (due to the high number of cross-links and covalent bonding to the substrate) to be obtained. A kinetic study over a large set of parameters was run with the aim of determining the optimal conditions for high stability and proton conductivity of the polymer layer. Copolymers with good stability over 6 months' time in air and water were obtained, as demonstrated by ellipsometry, X-Ray reflectivity, and FT-IR spectroscopy. Stable coatings showed also proton conductivity as high as 1.1 ± 0.1 mS cm-1. Chemical analysis showed that due to the high molecular weight of the chosen precursors, it was possible to keep the plasma energy-input-per-mass low. This allowed limited precursor fragmentation and the functional groups of both monomers to be retained during the plasma polymerization.

  15. Chemical vapor deposition of Ta{sub 2}O{sub 5} corrosion resistant coatings

    SciTech Connect

    Graham, D.W.; Stinton, D.P.

    1992-12-31

    Silicon carbide and silicon nitride heat engine components are susceptible to hot corrosion by molten Na{sub 2}SO{sub 4} which forms from impurities present in fuel and the environment. Chemically vapor deposited Ta{sub 2}O{sub 5} coatings are being developed as a means to protect components from reaction with these salts and preserve their structural properties. Investigations to optimize the structure of the coating have revealed that the deposition conditions dramatically affect the coating morphology. Coatings deposited at high temperatures are typically columnar in structure; high concentrations of the reactant gases produce oxide powders on the substrate surface. Ta{sub 2}O{sub 5} deposited at low temperatures consists of grains that are finer and have significantly less porosity than that formed at high temperatures. Samples of coatings which have been produced by CVD have successfully completed preliminary testing for resistance to corrosion by Na{sub 2}SO{sub 4}.

  16. Light induced chemical vapour deposition of titanium oxide thin films at room temperature

    NASA Astrophysics Data System (ADS)

    Halary, E.; Benvenuti, G.; Wagner, F.; Hoffmann, P.

    2000-02-01

    High resolution patterned deposition of titania is achieved by light induced chemical vapour deposition (LICVD), by imaging a mask onto a glass substrate. A long pulse XeCl Excimer laser (308 nm) provides, by perpendicular irradiation, the energy to convert titanium tetraisopropoxide (TTIP) vapour into titanium dioxide films, in an oxygen atmosphere, on unheated glass substrates. The amorphous titania deposits contain about 6% carbon contamination according to X-ray photoelectron spectroscopy (XPS) measurements. The deposition rate increases with increasing laser fluence until a maximum value is reached, then remains constant over a wide range, and finally decreases with further fluence increase due to titania ablation or thermal effects. The film thickness increases linearly with the number of pulses after a nucleation period. The strong influence of the laser pulse repetition rate on the growth rate and the thickness profile are reported.

  17. Experimental and Theoretical Analysis of Chemical Vapor Deposition with Prediction of Gravity Effects

    NASA Technical Reports Server (NTRS)

    Stinespring, C. D.; Spear, K. E.

    1985-01-01

    A combined experimental and theoretical study to characterize the effects of gravitationally-induced transport on atmospheric pressure silicon epitaxy by SiH4 pyrolysis is planned. Experimentally, flow regimes in which free convective transport contributes to the Chemical Vapor Deposition (CVD) process will be identified, and, for these conditions, the flow and deposition process will be characterized. Specifically, this will include measurements of three dimensional temperature variations using in situ Rayleigh scattering, gas phase composition profiles using laser absorption and fluorescence techniques, and deposition rates and defect densities. Subsequently, the free convective transport contribution to the CVD process will be minimized and/or altered while leaving deposition chemistry unaltered, and the characterization will be repeated. Based on these analyses, the effects of gravitationally-induced transport on atmospheric pressure CVD will be assessed.

  18. Material characterization of chemical vapor deposited TiB2 fibers

    SciTech Connect

    Revankar, V.; Lakhotia, V.; Hlavacek, V.

    1991-08-01

    Titanium diboride fiber which is capable of reinforcing metal matrices at high temperatures has been developed by chemical vapor deposition method on tungsten core. A thermodynamic analysis of the TiCl4 + BCl3 + H2 system has been carried out to determine the operating conditions for the highest equilibrium yield of TiB2. The optimum experimental conditions for deposition are obtained. Surface morphologies of the deposits obtained were studied as functions of substrate surface temperature and concentration of reactants. Crystal orientation was determined by different analytical methods. Effect of thermal stresses on the deposit and a remedy to improve its effect were thoroughly studied. The resultant fibers showed reasonably good properties. 11 refs.

  19. Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis

    SciTech Connect

    Asmussen, J.; Grotjohn, T. A.; Reinhard, D. K.; Schuelke, T.; Becker, M. F.; Yaran, M. K.; King, D. J.; Wicklein, S.

    2008-07-21

    A multiple substrate, microwave plasma-assisted chemical vapor deposition synthesis process for single crystal diamond (SCD) is demonstrated using a 915 MHz reactor. Diamond synthesis was performed using input chemistries of 6-8% of CH{sub 4}/H{sub 2}, microwave input powers of 10-11.5 kW, substrate temperatures of 1100-1200 deg. C, and pressures of 110-135 Torr. The simultaneous synthesis of SCD over 70 diamond seeds yielded good quality SCD with deposition rates of 14-21 {mu}m/h. Multiple deposition runs totaling 145 h of deposition time added 1.8-2.5 mm of diamond material to each of the 70 seed crystals.

  20. Quantum Chemical Simulation of Carbon Nanotube Nucleation on Al2O3 Catalysts via CH4 Chemical Vapor Deposition.

    PubMed

    Page, Alister J; Saha, Supriya; Li, Hai-Bei; Irle, Stephan; Morokuma, Keiji

    2015-07-29

    We present quantum chemical simulations demonstrating how single-walled carbon nanotubes (SWCNTs) form, or "nucleate", on the surface of Al2O3 nanoparticles during chemical vapor deposition (CVD) using CH4. SWCNT nucleation proceeds via the formation of extended polyyne chains that only interact with the catalyst surface at one or both ends. Consequently, SWCNT nucleation is not a surface-mediated process. We demonstrate that this unusual nucleation sequence is due to two factors. First, the π interaction between graphitic carbon and Al2O3 is extremely weak, such that graphitic carbon is expected to desorb at typical CVD temperatures. Second, hydrogen present at the catalyst surface actively passivates dangling carbon bonds, preventing a surface-mediated nucleation mechanism. The simulations reveal hydrogen's reactive chemical pathways during SWCNT nucleation and that the manner in which SWCNTs form on Al2O3 is fundamentally different from that observed using "traditional" transition metal catalysts. PMID:26148208

  1. On the Growth and Microstructure of Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Handuja, Sangeeta; Srivastava, P.; Vankar, V. D.

    2010-07-01

    Carbon nanotubes (CNTs) were deposited on various substrates namely untreated silicon and quartz, Fe-deposited silicon and quartz, HF-treated silicon, silicon nitride-deposited silicon, copper foil, and stainless steel mesh using thermal chemical vapor deposition technique. The optimum parameters for the growth and the microstructure of the synthesized CNTs on these substrates are described. The results show that the growth of CNTs is strongly influenced by the substrate used. Vertically aligned multi-walled CNTs were found on quartz, Fe-deposited silicon and quartz, untreated silicon, and on silicon nitride-deposited silicon substrates. On the other hand, spaghetti-type growth was observed on stainless steel mesh, and no CNT growth was observed on HF-treated silicon and copper. Silicon nitride-deposited silicon substrate proved to be a promising substrate for long vertically aligned CNTs of length 110-130 μm. We present a possible growth mechanism for vertically aligned and spaghetti-type growth of CNTs based on these results.

  2. Chemical Vapor Deposition of Nanocarbon on Electroless NiB Catalyst Using Ethanol Precursor

    NASA Astrophysics Data System (ADS)

    Tanaka, Toru; Sato, Tomomi; Karasawa, Yusuke; Ueno, Kazuyoshi

    2011-05-01

    Nanocarbon materials have been expected as post-Cu interconnect materials for large-scale integrated circuits (LSIs). In this paper, we present a nanocarbon deposition process using electroless plated NiB as the catalyst, which features conformal deposition on patterned dielectric surfaces. It was found that carbon nanotubes (CNTs) and graphitic films were deposited on the electroless NiB by atmospheric pressure chemical vapor deposition (CVD) using ethanol as the precursor. The graphitic quality estimated from the Raman spectra of the nanocarbon on the NiB catalyst was equivalent to that on a sputter-deposited pure Ni catalyst. The nanocarbon shape was dependent on NiB thickness, and CNTs were grown on 10-nm-thick NiB and graphitic films were grown on 30 nm or thicker NiB. The deposition temperature can be lowered to 505 °C, although the graphitic quality was degraded. It is considered that the electroless catalysts can be effective for nanocarbon deposition on patterned dielectric surfaces.

  3. Chemical vapor deposition of atomically thin materials for membrane dialysis applications

    NASA Astrophysics Data System (ADS)

    Kidambi, Piran; Mok, Alexander; Jang, Doojoon; Boutilier, Michael; Wang, Luda; Karnik, Rohit; Microfluidics; Nanofluidics Research Lab Team

    2015-11-01

    Atomically thin 2D materials like graphene and h-BN represent a new class of membranes materials. They offer the possibility of minimum theoretical membrane transport resistance along with the opportunity to tune pore sizes at the nanometer scale. Chemical vapor deposition has emerged as the preferable route towards scalable, cost effective synthesis of 2D materials. Here we show selective molecular transport through sub-nanometer diameter pores in graphene grown via chemical vapor deposition processes. A combination of pressure driven and diffusive transport measurements shows evidence for size selective transport behavior which can be used for separation by dialysis for applications such as desalting of biomolecular or chemical solutions. Principal Investigator

  4. Investigations of Ta film resistors on chemically vapor deposited diamond plates

    NASA Astrophysics Data System (ADS)

    Zhu, Xiao-Dong; Wang, Hua; Zhan, Ru-Juan; Zhou, Hai-Yang

    1999-12-01

    Ta films were deposited by sputtering on chemically vapor deposited (CVD) diamond plates to be used as resistors for microelectronic applications. The resistance temperature coefficient is only -10 ppm/°C when heating Ta film resistance from room temperature to 150°C. Meanwhile, no reaction is found at the interface between Ta and CVD diamond. These results show the Ta film resistance has high electrical and chemical stability in this temperature range. On the basis of data obtained by differential thermal analysis(DTA), it is found that the endothermic effects begin to appear for Ta/CVD diamond from 300°C. After heating Ta/CVD diamond up to 800°C, XRD analysis indicates that there are strong chemical reactions between Ta and CVD diamond to produce TaC, TaO, and TaO 2.

  5. 33 CFR 165.104 - Safety Zone: Vessel Launches, Bath Iron Works, Kennebec River, Bath, Maine.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ..., Bath Iron Works, Kennebec River, Bath, Maine. 165.104 Section 165.104 Navigation and Navigable Waters... Guard District § 165.104 Safety Zone: Vessel Launches, Bath Iron Works, Kennebec River, Bath, Maine. (a... Bath Iron Works dry dock while it is being moved to and from its moored position at the Bath Iron...

  6. 33 CFR 165.104 - Safety Zone: Vessel Launches, Bath Iron Works, Kennebec River, Bath, Maine.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ..., Bath Iron Works, Kennebec River, Bath, Maine. 165.104 Section 165.104 Navigation and Navigable Waters... Guard District § 165.104 Safety Zone: Vessel Launches, Bath Iron Works, Kennebec River, Bath, Maine. (a... Bath Iron Works dry dock while it is being moved to and from its moored position at the Bath Iron...

  7. 33 CFR 165.104 - Safety Zone: Vessel Launches, Bath Iron Works, Kennebec River, Bath, Maine.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ..., Bath Iron Works, Kennebec River, Bath, Maine. 165.104 Section 165.104 Navigation and Navigable Waters... Guard District § 165.104 Safety Zone: Vessel Launches, Bath Iron Works, Kennebec River, Bath, Maine. (a... Bath Iron Works dry dock while it is being moved to and from its moored position at the Bath Iron...

  8. 33 CFR 165.104 - Safety Zone: Vessel Launches, Bath Iron Works, Kennebec River, Bath, Maine.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ..., Bath Iron Works, Kennebec River, Bath, Maine. 165.104 Section 165.104 Navigation and Navigable Waters... Guard District § 165.104 Safety Zone: Vessel Launches, Bath Iron Works, Kennebec River, Bath, Maine. (a... Bath Iron Works dry dock while it is being moved to and from its moored position at the Bath Iron...

  9. 33 CFR 165.104 - Safety Zone: Vessel Launches, Bath Iron Works, Kennebec River, Bath, Maine.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ..., Bath Iron Works, Kennebec River, Bath, Maine. 165.104 Section 165.104 Navigation and Navigable Waters... Guard District § 165.104 Safety Zone: Vessel Launches, Bath Iron Works, Kennebec River, Bath, Maine. (a... Bath Iron Works dry dock while it is being moved to and from its moored position at the Bath Iron...

  10. Control of interface nanoscale structure created by plasma-enhanced chemical vapor deposition.

    PubMed

    Peri, Someswara R; Akgun, Bulent; Satija, Sushil K; Jiang, Hao; Enlow, Jesse; Bunning, Timothy J; Foster, Mark D

    2011-09-01

    Tailoring the structure of films deposited by plasma-enhanced chemical vapor deposition (PECVD) to specific applications requires a depth-resolved understanding of how the interface structures in such films are impacted by variations in deposition parameters such as feed position and plasma power. Analysis of complementary X-ray and neutron reflectivity (XR, NR) data provide a rich picture of changes in structure with feed position and plasma power, with those changes resolved on the nanoscale. For plasma-polymerized octafluorocyclobutane (PP-OFCB) films, a region of distinct chemical composition and lower cross-link density is found at the substrate interface for the range of processing conditions studied and a surface layer of lower cross-link density also appears when plasma power exceeds 40 W. Varying the distance of the feed from the plasma impacts the degree of cross-linking in the film center, thickness of the surface layer, and thickness of the transition region at the substrate. Deposition at the highest power, 65 W, both enhances cross-linking and creates loose fragments with fluorine content higher than the average. The thickness of the low cross-link density region at the air interface plays an important role in determining the width of the interface built with a layer subsequently deposited atop the first. PMID:21875044

  11. Chemical vapour deposition diamond coating on tungsten carbide dental cutting tools

    NASA Astrophysics Data System (ADS)

    Sein, H.; Ahmed, W.; Rego, C. A.; Jones, A. N.; Amar, M.; Jackson, M.; Polini, R.

    2003-10-01

    Diamond coatings on Co cemented tungsten carbide (WC-Co) hard metal tools are widely used for cutting non-ferrous metals. It is difficult to deposit diamond onto cutting tools, which generally have a complex geometry, using a single step growth process. This paper focuses on the deposition of polycrystalline diamond films onto dental tools, which possess 3D complex or cylindrical shape, employing a novel single step chemical vapour deposition (CVD) growth process. The diamond deposition is carried out in a hot filament chemical vapour deposition (HFCVD) reactor with a modified filament arrangement. The filament is mounted vertically with the drill held concentrically in between the filament coils, as opposed to the commonly used horizontal arrangement. This is a simple and inexpensive filament arrangement. In addition, the problems associated with adhesion of diamond films on WC-Co substrates are amplified in dental tools due to the very sharp edges and unpredictable cutting forces. The presence of Co, used as a binder in hard metals, generally causes poor adhesion. The amount of metallic Co on the surface can be reduced using a two step pre-treatment employing Murakami etching followed by an acid treatment. Diamond films are examined in terms of their growth rate, morphology, adhesion and cutting efficiency. We found that in the diamond coated dental tool the wear rate was reduced by a factor of three as compared to the uncoated tool.

  12. Chlorhexidine gluconate: to bathe or not to bathe?

    PubMed

    Rubin, Caroline; Louthan, Rufina Bavin; Wessels, Erica; McGowan, Mary-Bridgid; Downer, Shantee; Maiden, Jeanne

    2013-01-01

    Despite infection-prevention initiatives, hospital-acquired infections (HAIs) are still a common occurrence. Chlorhexidine gluconate (CHG) is an important antibacterial agent. Research indicates that the intervention of bathing with CHG can reduce the number of HAIs. Chlorhexidine gluconate is known to reduce the bioload of several bacteria, including multiple strains of methicillin-resistant Staphylococcus aureus. Research regarding the intervention of bathing with CHG was assessed and found to reduce central line-related blood stream infections, ventilator-associated pneumonia, and vancomycin-resistant enterococci. The reduction in HAIs was found to be greater as compared to bathing with soap and water. The reduction of these HAIs will allow for a saving of resources, finances and staff time, which may ultimately be passed on to the patient. While further research is indicated, a strong conclusion is drawn that bathing with CHG reduces the number of HAIs. PMID:23470709

  13. High rate, large area laser-assisted chemical vapor deposition of nickel from nickel carbonyl

    NASA Astrophysics Data System (ADS)

    Paserin, Vlad

    High-power diode lasers (HPDL) are being increasingly used in industrial applications. Deposition of nickel from nickel carbonyl (Ni(CO)4 ) precursor by laser-induced chemical vapor deposition (CVD) was studied with emphasis on achieving high deposition rates. An HPDL system was used to provide a novel energy source facilitating a simple and compact design of the energy delivery system. Nickel deposits on complex, 3-dimensional polyurethane foam substrates were prepared and characterized. The resulting "nickel foam" represents a novel material of high porosity (>95% by volume) finding uses, among others, in the production of rechargeable battery and fuel cell electrodes and as a specialty high-temperature filtration medium. Deposition rates up to ˜19 mum/min were achieved by optimizing the gas precursor flow pattern and energy delivery to the substrate surface using a 480W diode laser. Factors affecting the transition from purely heterogeneous decomposition to a combined hetero- and homogeneous decomposition of nickel carbonyl were studied. High quality, uniform 3-D deposits produced at a rate more than ten times higher than in commercial processes were obtained by careful balance of mass transport (gas flow) and energy delivery (laser power). Cross-flow of the gases through the porous substrate was found to be essential in facilitating mass transport and for obtaining uniform deposits at high rates. When controlling the process in a transient regime (near the onset of homogenous decomposition), unique morphology features formed as part of the deposits, including textured surface with pyramid-shape crystallites, spherical and non-spherical particles and filaments. Operating the laser in a pulsed mode produced smooth, nano-crystalline deposits with sub-100 nm grains. The effect of H2S, a commonly used additive in nickel carbonyl CVD, was studied using both polyurethane and nickel foam substrates. H2S was shown to improve the substrate coverage and deposit

  14. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NASA Astrophysics Data System (ADS)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  15. Copper-induced dielectric breakdown in silicon oxide deposited by plasma-enhanced chemical vapor deposition using trimethoxysilane

    NASA Astrophysics Data System (ADS)

    Takeda, Ken-ichi; Ryuzaki, Daisuke; Mine, Toshiyuki; Hinode, Kenji; Yoneyama, Ryo

    2003-08-01

    The barrier mechanism against copper-ion diffusion in silicon-oxide films deposited by plasma-enhanced chemical vapor deposition (PECVD) using trimethoxysilane (TMS) and nitrous oxide (N2O) chemistry (PE-TMS oxide) was studied. It was found that the flow ratio of TMS gas to N2O gas during deposition strongly affects a time-dependent dielectric-breakdown lifetime of PE-TMS oxide with a copper electrode as well as other PE-TMS oxide film properties such as electrical properties (leakage current and dielectric constant), a physical property (atomic composition), and chemical properties (chemical bonding states and wet-etching rate). The dielectric-breakdown lifetime of PE-TMS oxide film with a copper anode is a maximum at a source-gas ratio ranging from 1.7% to 3.3%. On the other hand, leakage current density, wet-etch rate, and dielectric-breakdown lifetime of PE-TMS oxide film with an aluminum electrode are degraded by increasing the source-gas flow ratio (0.83% to 12%). These results suggest that two types of degradation mode exist in the dielectric breakdown of PE-TMS oxide with a copper electrode. Namely, at low flow ratio (<1.7%), copper-induced degradation is dominant, but at high flow ratio (>3.3%), the dielectric degradation is probably not caused by copper contamination but by low-quality dielectric material. The dielectric-breakdown lifetimes of a PE-TMS oxide film (flow ratio: 3.3%) with a copper anode show an Arrhenius-type temperature dependence. That is, the activation energy of the dielectric-breakdown lifetime depends on the applied electric field and decreases from 1.8 to 0.55 eV when the applied field is increased from 0 to 5 MV/cm. As a simple kinetic model of the copper injection reaction at the anode surface, a thermally activated reaction process between two energy states—copper atom state on the anode surface and copper ion state in the dielectric material—is proposed.

  16. Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects

    SciTech Connect

    McCloy, John S.; Potter, B.g.

    2013-08-09

    Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.

  17. Improvement of uniformity in chemical vapor deposition of silicon carbide by using CFD

    NASA Astrophysics Data System (ADS)

    Seo, Jin-Won; Kim, Jun-Woo; Choi, Kyoon; Lee, Jong-Heun

    2016-01-01

    The chemical vapor deposition (CVD) of silicon carbide (SiC) on carbon has been widely used as a general method to suppress dust generation on carbon surfaces. For a CH3SiCl3 (MTS) and hydrogen system, computational fluid dynamic simulations to predict the growth rate of the silicon carbide are performed. The results of the simulations are consistent with the experimental results where the deposition rate depends highly on the H/Si composition and the specimen's location. This simulation can provide guidance in optimizing the CVD process and improving the apparatus for CVD of SiC.

  18. Oxygen and hydrogen effects on the chemical vapor deposition of aluminum nitride films

    SciTech Connect

    Aspar, B.; Armas, B.; Combescure, C. ); Figueras, A.; Rodriguez-Clemente, R. ); Mazel, A.; Kihn, Y.; Sevely, J. )

    1993-06-01

    Aluminum nitride has been obtained by chemical vapor deposition using AlCl[sub 3] and NH[sub 3] as precursors. Progressive introduction of N[sub 2]0 in the gas mixture has shown the possibility of inserting oxygen in the AlN lattice. This involves strong changes of surface morphology of the deposit and the formation of less-crystallized materials. When hydrogen is added to the gas mixture, these effects are reduced, Electron energy loss spectroscopy has shown that, in this case, oxygen is mainly concentrated on the external parts of AlN crystals, the structure of which has been found consistent with the wurtzite structure.

  19. Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Furukawa, Taisuke; Kuroiwa, Takeharu; Fujisaki, Yoshihisa; Sato, Takehiko; Ishiwara, Hiroshi

    2005-03-01

    Ferroelectric Ru/Bi4-xLaxTi3O12/Ru capacitors were fabricated by combining metalorganic chemical vapor deposition (MOCVD) of top and bottom Ru electrodes and spin-coating of the ferroelectric film. After optimization of the deposition conditions, good ferroelectric properties (2Pr=18 μC/cm2, Pr: remanent polarization) and low leakage current density (2× 10-6 A/cm2) were achieved. No significant fatigue phenomenon (decrease of Pr) was observed even after 1010 switching cycles.

  20. Growth and Characteristics of Freestanding Hemispherical Diamond Films by Microwave Plasma Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Wang, Qi-Liang; Lü, Xian-Yi; Li, Liu-An; Cheng, Shao-Heng; Li, Hong-Dong

    2010-04-01

    Freestanding hemispherical diamond films have been fabricated by microwave plasma chemical vapor deposition using graphite and molybdenum (Mo) as substrates. Characterized by Raman spectroscopy and scanning electron microscopy, the crystalline quality of the films deposited on Mo is higher than that on graphite, which is attributed to the difference in intrinsic properties of the two substrates. By decreasing the methane concentration, the diamond films grown on the Mo substrate vary from black to white, and the optical transparency is enhanced. After polishing the growth side, the diamond films show an infrared transmittance of 35-60% in the range 400-4000 cm-1.

  1. Diameter-controlled growth of carbon nanotubes using thermal chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, Cheol Jin; Lyu, Seung Chul; Cho, Young Rae; Lee, Jin Ho; Cho, Kyoung Ik

    2001-06-01

    The diameter and the growth rate of vertically aligned carbon nanotubes (CNTs) are controlled by modulating the size of catalytic particles using thermal chemical vapor deposition (CVD). The size of iron catalytic particles deposited on silicon oxide substrate is varied in a controlled manner by adjusting the condition of ammonia pretreatment. We found an inverse relation between the diameter and growth rate of carbon nanotubes. As the diameter increases, the compartment layers of bamboo-shaped carbon nanotubes appear more frequently, which is suitably explained by the base growth mechanism.

  2. Synthesis of vertically aligned carbon nanotubes on a large area using thermal chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, C. J.; Son, K. H.; Lee, T. J.; Lyu, S. C.; Yoo, J. E.

    2001-10-01

    Vertically well-aligned carbon nanotubes (CNTs) were homogeneously grown on iron deposited silicon oxide substrate by thermal chemical vapor deposition of acetylene. The CNTs have an uniform length of 100 μm and a diameter in the range from 100 to 200 nm. The CNTs reveal closed tip and very clean surface without any carbonaceous particles. The CNTs have no encapsulated iron particles at the closed tip and a bamboo structure in which the curvature of compartment layers is directed to the tip.

  3. Development of a polysilicon process based on chemical vapor deposition, phase 1

    NASA Technical Reports Server (NTRS)

    Plahutnik, F.; Arvidson, A.; Sawyer, D.

    1982-01-01

    The goal of this program is to demonstrate that a dichlorosilane-based reductive chemical vapor deposition (CVD) process is capable of producing, at low cost, high quality polycrystalline silicon. Physical form and purity of this material will be consistent with LSA material requirements for use in the manufacture of high efficiency solar cells. Four polysilicon deposition runs were completed in an intermediate size reactor using dichlorosilane fed from 250 pound cylinders. Results from the intermediate size reactor are consistent with those obtained earlier with a small experimental reactor. Modifications of two intermediate size reactors were completed to interface with the dichlorosilane process demonstration unit (PDU).

  4. Chemical-Vapor Deposition Of Cd1-xMnxTe

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar; Stirn, Richard J.

    1989-01-01

    Experimental process makes films with interesting magnetic and magneto-optical properties. Films of dilute magnetic semiconductor alloy Cd1-xMnxTe deposited on glass and GaAs substrates by metalorganic chemical-vapor deposition (MOCVD). Devices made with Cd1-xMnxTe films known to exhibit strong photoluminescence, stimulated emission, and magnetically-tunable lasing action. In addition, energy-band gaps of such material tailored by altering its composition - property giving flexibility in development of high-efficiency cascade solar photovoltaic cells. Performs at atmospheric pressure, resulting in more-uniform films, covering larger area, and enabling higher production rate.

  5. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Durmazuçar, Hasan H.; Gündüz, Güngör

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  6. Chemical vapor deposited diamond-on-diamond powder composites (LDRD final report)

    SciTech Connect

    Panitz, J.K.; Hsu, W.L.; Tallant, D.R.; McMaster, M.; Fox, C.; Staley, D.

    1995-12-01

    Densifying non-mined diamond powder precursors with diamond produced by chemical vapor infiltration (CVI) is an attractive approach for forming thick diamond deposits that avoids many potential manufacturability problems associated with predominantly chemical vapor deposition (CVD) processes. The authors developed techniques for forming diamond powder precursors and densified these precursors in a hot filament-assisted reactor and a microwave plasma-assisted reactor. Densification conditions were varied following a fractional factorial statistical design. A number of conclusions can be drawn as a result of this study. High density diamond powder green bodies that contain a mixture of particle sizes solidify more readily than more porous diamond powder green bodies with narrow distributions of particle sizes. No composite was completely densified although all of the deposits were densified to some degree. The hot filament-assisted reactor deposited more material below the exterior surface, in the interior of the powder deposits; in contrast, the microwave-assisted reactor tended to deposit a CVD diamond skin over the top of the powder precursors which inhibited vapor phase diamond growth in the interior of the powder deposits. There were subtle variations in diamond quality as a function of the CVI process parameters. Diamond and glassy carbon tended to form at the exterior surface of the composites directly exposed to either the hot filament or the microwave plasma. However, in the interior, e.g. the powder/substrate interface, diamond plus diamond-like-carbon formed. All of the diamond composites produced were grey and relatively opaque because they contained flawed diamond, diamond-like-carbon and glassy carbon. A large amount of flawed and non-diamond material could be removed by post-CVI oxygen heat treatments. Heat treatments in oxygen changed the color of the composites to white.

  7. Estimating Chemical Exchange between Atmospheric Deposition and Forest Canopy in Guizhou, China.

    PubMed

    Li, Wei; Gao, Fang; Liao, Xueqin

    2013-01-01

    To evaluate the effects of atmospheric deposition on forest ecosystems, wet-only precipitation and throughfall samples were collected in two forest types (Masson pine [ Lamb.] forests and mixed conifer and broadleaf forests) in the Longli forest in the Guizhou province of southwestern China for a period of 21 successive months from April 2007 to December 2008. The pH and chemical components of precipitation and throughfall were analyzed. In addition, the canopy budget model was applied to distinguish between in-canopy and atmospheric sources of chemical compounds. Canopy leaching and total potentially acidifying deposition fluxes were calculated. The results showed that the average pH and the concentration of ions in throughfall were higher than those in precipitation, with the exception of the NH concentration. Dry deposition of S and N accumulated more in Masson pine forests than in mixed conifer and broadleaf forests. Canopy leaching was the most significant source of base cations in forest throughfall, which was higher in the mixed forests than in the coniferous forests. Anions in throughfall deposition in Masson pine forests exceeded those in the mixed forests. Higher total potentially acidifying deposition fluxes reflected the more effective amounts of acid delivered to Masson pine forests compared with mixed conifer and broadleaf forests. In addition, acid deposition induced the leaching and loss of nutrient ions such as Mg, K, and Ca. Although the trees of the studied areas have not shown any symptoms of cation loss, a potentially harmful influence was engendered by atmospheric deposition in the two forest types in the Longli area. PMID:23673825

  8. Using different chemical methods for deposition of copper selenide thin films and comparison of their characterization.

    PubMed

    Güzeldir, Betül; Sağlam, Mustafa

    2015-11-01

    Different chemical methods such as Successive Ionic Layer Adsorption and Reaction (SILAR), spin coating and spray pyrolysis methods were used to deposite of copper selenide thin films on the glass substrates. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) spectroscopy and UV-vis spectrophotometry. The XRD and SEM studies showed that all the films exhibit polycrystalline nature and crystallinity of copper selenide thin films prepared with spray pyrolysis greater than spin coating and SILAR methods. From SEM and AFM images, it was observed copper selenide films were uniform on the glass substrates without any visible cracks or pores. The EDX spectra showed that the expected elements exist in the thin films. Optical absorption studies showed that the band gaps of copper selenide thin films were in the range 2.84-2.93 eV depending on different chemical methods. The refractive index (n), optical static and high frequency dielectric constants (ε0, ε∞) values were calculated by using the energy bandgap values for each deposition method. The obtained results from different chemical methods revealed that the spray pyrolysis technique is the best chemical deposition method to fabricate copper selenide thin films. This absolute advantage was lead to play key roles on performance and efficiency electrochromic and photovoltaic devices. PMID:26037495

  9. Modeling chemical vapor deposition of silicon dioxide in microreactors at atmospheric pressure

    NASA Astrophysics Data System (ADS)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a multiphysics mathematical model for simulation of silicon dioxide Chemical Vapor Deposition (CVD) from tetraethyl orthosilicate (TEOS) and oxygen mixture in a microreactor at atmospheric pressure. Microfluidics is a promising technology with numerous applications in chemical synthesis due to its high heat and mass transfer efficiency and well-controlled flow parameters. Experimental studies of CVD microreactor technology are slow and expensive. Analytical solution of the governing equations is impossible due to the complexity of intertwined non-linear physical and chemical processes. Computer simulation is the most effective tool for design and optimization of microreactors. Our computational fluid dynamics model employs mass, momentum and energy balance equations for a laminar transient flow of a chemically reacting gas mixture at low Reynolds number. Simulation results show the influence of microreactor configuration and process parameters on SiO2 deposition rate and uniformity. We simulated three microreactors with the central channel diameter of 5, 10, 20 micrometers, varying gas flow rate in the range of 5-100 microliters per hour and temperature in the range of 300-800 °C. For each microchannel diameter we found an optimal set of process parameters providing the best quality of deposited material. The model will be used for optimization of the microreactor configuration and technological parameters to facilitate the experimental stage of this research.

  10. Surface modification of silicon-containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Jin, Yoonyoung; Desta, Yohannes; Goettert, Jost; Lee, G. S.; Ajmera, P. K.

    2005-07-01

    Surface modification of silicon-containing fluorocarbon (SiCF) films achieved by wet chemical treatments and through x-ray irradiation is examined. The SiCF films were prepared by plasma-enhanced chemical vapor deposition, using gas precursors of tetrafluoromethane and disilane. As-deposited SiCF film composition was analyzed by x-ray photoelectron spectroscopy. Surface modification of SiCF films utilizing n-lithiodiaminoethane wet chemical treatment is discussed. Sessile water-drop contact angle changed from 95°+/-2° before treatment to 32°+/-2° after treatment, indicating a change in the film surface characteristics from hydrophobic to hydrophilic. For x-ray irradiation on the SiCF film with a dose of 27.4 kJ/cm3, the contact angle of the sessile water drop changed from 95°+/-2° before radiation to 39°+/-3° after x-ray exposure. The effect of x-ray exposure on chemical bond structure of SiCF films is studied using Fourier transform infrared measurements. Electroless Cu deposition was performed to test the applicability of the surface modified films. The x-ray irradiation method offers a unique advantage in making possible surface modification in a localized area of high-aspect-ratio microstructures. Fabrication of a Ti-membrane x-ray mask is introduced here for selective surface modification using x-ray irradiation.

  11. Conformal encapsulation of three-dimensional, bioresorbable polymeric scaffolds using plasma-enhanced chemical vapor deposition.

    PubMed

    Hawker, Morgan J; Pegalajar-Jurado, Adoracion; Fisher, Ellen R

    2014-10-21

    Bioresorbable polymers such as poly(ε-caprolactone) (PCL) have a multitude of potential biomaterial applications such as controlled-release drug delivery and regenerative tissue engineering. For such biological applications, the fabrication of porous three-dimensional bioresorbable materials with tunable surface chemistry is critical to maximize their surface-to-volume ratio, mimic the extracellular matrix, and increase drug-loading capacity. Here, two different fluorocarbon (FC) precursors (octofluoropropane (C3F8) and hexafluoropropylene oxide (HFPO)) were used to deposit FC films on PCL scaffolds using plasma-enhanced chemical vapor deposition (PECVD). These two coating systems were chosen with the intent of modifying the scaffold surfaces to be bio-nonreactive while maintaining desirable bulk properties of the scaffold. X-ray photoelectron spectroscopy showed high-CF2 content films were deposited on both the exterior and interior of PCL scaffolds and that deposition behavior is PECVD system specific. Scanning electron microscopy data confirmed that FC film deposition yielded conformal rather than blanket coatings as the porous scaffold structure was maintained after plasma treatment. Treated scaffolds seeded with human dermal fibroblasts (HDF) demonstrate that the cells do not attach after 72 h and that the scaffolds are noncytotoxic to HDF. This work demonstrates conformal FC coatings can be deposited on 3D polymeric scaffolds using PECVD to fabricate 3D bio-nonreactive materials. PMID:25247481

  12. Selective growth of titanium dioxide by low-temperature chemical vapor deposition.

    PubMed

    Reinke, Michael; Kuzminykh, Yury; Hoffmann, Patrik

    2015-05-13

    A key factor in engineering integrated optical devices such as electro-optic switches or waveguides is the patterning of thin films into specific geometries. In particular for functional oxides, etching processes are usually developed to a much lower extent than for silicon or silicon dioxide; therefore, selective area deposition techniques are of high interest for these materials. We report the selective area deposition of titanium dioxide using titanium isopropoxide and water in a high-vacuum chemical vapor deposition (HV-CVD) process at a substrate temperature of 225 °C. Here—contrary to conventional thermal CVD processes—only hydrolysis of the precursor on the surface drives the film growth as the thermal energy is not sufficient to thermally decompose the precursor. Local modification of the substrate surface energy by perfluoroalkylsilanization leads to a reduced surface residence time of the precursors and, consequently, to lower reaction rate and a prolonged incubation period before nucleation occurs, hence, enabling selective area growth. We discuss the dependence of the incubation time and the selectivity of the deposition process on the presence of the perfluoroalkylsilanization layer and on the precursor impinging rates—with selectivity, we refer to the difference of desired material deposition, before nucleation occurs in the undesired regions. The highest measured selectivity reached (99 ± 5) nm, a factor of 3 superior than previously reported in an atomic layer deposition process using the same chemistry. Furthermore, resolution of the obtained patterns will be discussed and illustrated. PMID:25901661

  13. Aerosol assisted chemical vapor deposition using nanoparticle precursors: a route to nanocomposite thin films.

    PubMed

    Palgrave, Robert G; Parkin, Ivan P

    2006-02-01

    Gold nanoparticle and gold/semiconductor nanocomposite thin films have been deposited using aerosol assisted chemical vapor deposition (CVD). A preformed gold colloid in toluene was used as a precursor to deposit gold films onto silica glass. These nanoparticle films showed the characteristic plasmon absorption of Au nanoparticles at 537 nm, and scanning electron microscopic (SEM) imaging confirmed the presence of individual gold particles. Nanocomposite films were deposited from the colloid concurrently with conventional CVD precursors. A film of gold particles in a host tungsten oxide matrix resulted from co-deposition with [W(OPh)(6)], while gold particles in a host titania matrix resulted from co-deposition with [Ti(O(i)Pr)(4)]. The density of Au nanoparticles within the film could be varied by changing the Au colloid concentration in the original precursor solution. Titania/gold composite films were intensely colored and showed dichromism: blue in transmitted light and red in reflected light. They showed metal-like reflection spectra and plasmon absorption. X-ray photoelectron spectroscopy and energy-dispersive X-ray analysis confirmed the presence of metallic gold, and SEM imaging showed individual Au nanoparticles embedded in the films. X-ray diffraction detected crystalline gold in the composite films. This CVD technique can be readily extended to produce other nanocomposite films by varying the colloids and precursors used, and it offers a rapid, convenient route to nanoparticle and nanocomposite thin films. PMID:16448130

  14. Chemical vapor deposition of amorphous semiconductor films. Semiannual report, 1 May 1984-31 October 1984

    SciTech Connect

    Baron, B.N.; Rocheleau, R.E.; Hegedus, S.S.

    1985-06-01

    This report describes the results of research done by the Institute of Energy Conversion for the Solar Energy Research Institute in 1984 on high-efficiency, stable, amorphous silicon solar cells, fabricated by chemical vapor deposition (CVD) from disilane at high growth rates. The kinetics of CVD with higher order silanes were modelled for a tubular reactor with static substrates. A gas-phase reaction network was adopted, based on published silylene insertion and decomposition pathways. Mass balances for hydrogen and all saturated silanes through octasilane were derived. Boron-doped a-Si:H p-layers were deposited by CVD at 200/sup 0/ to 250/sup 0/C. Band gap and conductivity depended strongly on the diborane fraction in the feed gas, independent of substrate temperature. The effects of intrinsic layer deposition temperature and growth rate on material properties and device performance were studied. Cell parameters of p-i-n cells were correlated with i-layer deposition temperature and growth rate. Fill factor and short-circuit current depended on deposition conditions, while open-circuit voltage did not. Effects of diborane additions to the feed gas during i-layer deposition were studied. Experimental evidence and calculations indicate high resistance at the back contact.

  15. Online process control of acidic texturisation baths with ion chromatography.

    PubMed

    Zimmer, Martin; Oltersdorf, Antje; Rentsch, Jochen

    2009-12-15

    Etching of silicon with mixtures of hydrofluoric acid and nitric acid is a widely used process in silicon solar cell fabrication. One precondition for an optimized usage of the acidic etching baths is the exact knowledge of the chemical bath composition. In this paper, we investigated a fast and online-capable method for the total analysis of all bath constituents by ion chromatography. The chromatographical system consists of a low-volume injection valve, which injects the concentrated samples directly into the KOH-based eluent. After separation and detection of nitrate and fluoride, a post-column derivatization with sodium molybdate is applied to detect the hexafluorosilicic acid, which enriches in the texturisation bath during the etching process. The results of the presented approach are discussed and compared with already published chromatographical and titration methods found in literature. PMID:19836511

  16. Process development for the manufacture of an integrated dispenser cathode assembly using laser chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Johnson, Ryan William

    2005-07-01

    Laser Chemical Vapor Deposition (LCVD) has been shown to have great potential for the manufacture of small, complex, two or three dimensional metal and ceramic parts. One of the most promising applications of the technology is in the fabrication of an integrated dispenser cathode assembly. This application requires the deposition of a boron nitride-molybdenum composite structure. In order to realize this structure, work was done to improve the control and understanding of the LCVD process and to determine experimental conditions conducive to the growth of the required materials. A series of carbon fiber and line deposition studies were used to characterize process-shape relationships and study the kinetics of carbon LCVD. These studies provided a foundation for the fabrication of the first high aspect ratio multi-layered LCVD wall structures. The kinetics studies enabled the formulation of an advanced computational model in the FLUENT CFD package for studying energy transport, mass and momentum transport, and species transport within a forced flow LCVD environment. The model was applied to two different material systems and used to quantify deposition rates and identify rate-limiting regimes. A computational thermal-structural model was also developed using the ANSYS software package to study the thermal stress state within an LCVD deposit during growth. Georgia Tech's LCVD system was modified and used to characterize both boron nitride and molybdenum deposition independently. The focus was on understanding the relations among process parameters and deposit shape. Boron nitride was deposited using a B3 N3H6-N2 mixture and growth was characterized by sporadic nucleation followed by rapid bulk growth. Molybdenum was deposited from the MoCl5-H2 system and showed slow, but stable growth. Each material was used to grow both fibers and lines. The fabrication of a boron nitride-molybdenum composite was also demonstrated. In sum, this work served to both advance the

  17. Grooming, Bathing and Safety Tips

    MedlinePlus

    ... Wet One of the most common problems that amputees encounter is maintaining balance while bathing and climbing ... 18/2014 Back to Top © Copyrighted by the Amputee Coalition . Local reproduction for use by Amputee Coalition ...

  18. Flexible Electronics: High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells (Adv. Mater. 28/2016).

    PubMed

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    On page 5939, J. V. Badding and co-workers describe the unrolling of a flexible hydrogenated amorphous silicon solar cell, deposited by high-pressure chemical vapor deposition. The high-pressure deposition process is represented by the molecules of silane infiltrating the small voids between the rolled up substrate, facilitating plasma-free deposition over a very large area. The high-pressure approach is expected to also find application for 3D nanoarchitectures. PMID:27442970

  19. Bath for electrolytic reduction of alumina and method therefor

    DOEpatents

    Brown, Craig W.; Brooks, Richard J.; Frizzle, Patrick B.; Juric, Drago D.

    2001-07-10

    An electrolytic bath for use during the electrolytic reduction of alumina to aluminum. The bath comprises a molten electrolyte having the following ingredients: (a) AlF.sub.3 and at least one salt selected from the group consisting of NaF, KF, and LiF; and (b) about 0.004 wt. % to about 0.2 wt. %, based on total weight of the molten electrolyte, of at least one transition metal or at least one compound of the metal or both. The compound may be, for example, a fluoride, oxide, or carbonate. The metal can be nickel, iron, copper, cobalt, or molybdenum. The bath can be employed in a combination that includes a vessel for containing the bath and at least one non-consumable anode and at least one dimensionally stable cathode in the bath. Employing the bath of the present invention during electrolytic reduction of alumina to aluminum can improve the wetting of aluminum on a cathode by reducing or eliminating the formation of non-metallic deposits on the cathode.

  20. Deposition of silver nanoparticles on multiwalled carbon nanotubes by chemical reduction process and their antimicrobial effects

    NASA Astrophysics Data System (ADS)

    Haider, Adawiya J.; Thamir, Amin D.; Ahmed, Duha S.; Mohammad, M. R.

    2016-07-01

    In this paper, the functionalization of raw-MWCNTs involves oxidation reaction using concentrated acid mixture of HNO3:H2SO4 (1:3), via ultrasonic bath (170 W, 50 kHz) to obtain functional groups. Then Ag nanoparticles are decorated the outside over the surface of functionalized MWCNTs using a chemical reduction process resulting in the formation of(Ag/ MWCNTs) hybrid material. The results showed that outer diameter functionalized F-MWCNTs andAg nanoparticles size was about (11-80) nm and (10 to 25) nm, respectively using TEM and HRTEM. The crystallographic structure of MWCNTs using X-ray diffraction (XRD) analysis proved diffraction peaks at 38.1°, 44.3°, 64.7° and 77.4° degrees namely, Ag (111), Ag (200), Ag (220), and Ag (311) of the face-centered cubic lattice of Ag, respectively, excepting the peak at 2θ =25.6°, which correspond to the (0 0 2) reflection of the MWNTs are corresponding to Ag/MWNTs. The antimicrobial activities of Ag/MWCNTs hybrid using plate count method showed that decreasing a large number of bacteria colonies of E. coli and S. aureu with increasing the hybrid concentrations after incubation for 24h in shaker incubator with percentage of inhibition approaching 100%.

  1. Gas phase versus surface contributions to photolytic laser chemical vapor deposition rates

    NASA Astrophysics Data System (ADS)

    Braichotte, D.; van den Bergh, H.

    1988-04-01

    The rate of cw photolytic laser chemical vapor deposition (LCVD) of platinum is measured for λ≈350 nm as a function of the light intensity and the metalorganic vapor pressure. The growth of the metal films is studied in situ and in real time by monitoring their optical transmission. At low intensities the transmitted light decreases monotonically with time, and the LCVD process is photolytic with its rate limiting step in the surface adlayer. At higher intensities we observe two distinct time domains: Relatively slow initial photolytic deposition with its rate limiting step in the gas phase, which is followed by much faster pyrolytic LCVD. An improved method for distinguishing between adlayer and gas-phase limiting processes is demonstrated. These observations are confirmed by studying the photolytic deposition rates while varying the thickness of the adlayer.

  2. Development of a polysilicon process based on chemical vapor deposition, phase 1

    NASA Technical Reports Server (NTRS)

    Mccormick, J.; Sharp, K.; Arvidson, A.; Sawyer, D.

    1981-01-01

    The development of a dichlorosilane-based reductive chemical vapor deposition process for the production of polycrystalline silicon is discussed. Experimental data indicate that the ease of ignition and explosion severity of dichlorosilane (DCS)/air mixtures is substantially attenuated if the DCS is diluted with hydrogen. Redesign of the process development unit to accommodate safety related information is described. Several different sources of trichlorosilane were used to generate a mixture of redistributed chlorosilanes via Dowex ion exchange resin. The unseparated mixtures were then fed to an experimental reactor in which silicon was deposited and the deposited silicon analyzed for electrically active impurities. At least one trichlorosilane source provided material of requisite purity. Silicon grown in the experimental reactor was converted to single crystal material and solar cells fabricated and tested.

  3. Growth of cubic boron nitride on diamond particles by microwave plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Saitoh, H.; Yarbrough, W. A.

    1991-06-01

    The nucleation and growth of cubic boron nitride (c-BN) onto diamond powder using solid NaBH4 in low pressure gas mixtures of NH3 and H2 by microwave plasma enhanced chemical vapor deposition has been studied. Boron nitride was deposited on submicron diamond seed crystals scattered on (100) silicon single crystal wafers and evidence was found for the formation of the cubic phase. Diamond powder surfaces appear to preferentially nucleate c-BN. In addition, it was found that the ratio of c-BN to turbostratic structure boron nitride (t-BN) deposited increases with decreasing NH3 concentration in H2. It is suggested that this may be due to an increased etching rate for t-BN by atomic hydrogen whose partial pressure may vary with NH3 concentration.

  4. Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Gale, R. P.; Mcclelland, R. W.; Fan, J. C. C.; Bozler, C. O.

    1982-01-01

    Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

  5. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J.

    2015-11-01

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH4/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H2 into the deposition gas chemistry. Electronically excited species of CN, C2, Ar, N2, CH, Hβ, and Hα were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T2g phonon at 1333 cm-1 peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit "coral" and "cauliflower-like" morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

  6. Simultaneous growth of diamond and nanostructured graphite thin films by hot-filament chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ali, M.; Ürgen, M.

    2012-01-01

    Diamond and graphite films on silicon wafer were simultaneously synthesized at 850 °C without any additional catalyst. The synthesis was achieved in hot-filament chemical vapor deposition reactor by changing distance among filaments in traditional gas mixture. The inter-wire distance for diamond and graphite deposition was kept 5 and 15 mm, whereas kept constant from the substrate. The Raman spectroscopic analyses show that film deposited at 5 mm is good quality diamond and at 15 mm is nanostructured graphite and respective growths confirm by scanning auger electron microscopy. The scanning electron microscope results exhibit that black soot graphite is composed of needle-like nanostructures, whereas diamond with pyramidal featured structure. Transformation of diamond into graphite mainly attributes lacking in atomic hydrogen. The present study develops new trend in the field of carbon based coatings, where single substrate incorporate dual application can be utilized.

  7. Hot-wire chemical vapour deposition at low substrate temperatures for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Bakker, R.

    2010-09-01

    The need for large quantities of rapidly and cheaply produced electronic devices has increased rapidly over the past decades. The transistors and diodes that are used to build these devices are predominantly made of crystalline silicon. Since crystalline silicon is very expensive to produce on a large scale and cannot be directly deposited on plastic substrates, much research is being done on thin film amorphous or nanocrystalline semiconductors and insulators. Hot-wire chemical vapour deposition (HWCVD) is a novel, low cost, and convenient way to deposit these materials. The process can be controlled in such a way that specific chemical reactions take place and unwanted side reactions are minimized. It can easily be scaled up to produce large-area thin film electronics. Conventionally, plasma enhanced chemical vapour deposition (PECVD) is used to deposit semiconductors and inorganic dielectrics. Recently, HWCVD has been explored for fast deposition of such materials. An adaptation of HWCVD, initiated chemical vapour deposition (iCVD), offers the unique possibility of producing organic materials and polymers in a vacuum reactor, without the use of solvents. This technique was originally proposed at the Massachusetts institute of technology (MIT) by Prof. Karen Gleason. The iCVD process involves the creation of radicals by dissociation of a peroxide (a molecule with a ~O-O~ bond) by a heated wire in a vacuum reactor. This radical initiates a polymerization reaction of a vinyl (a molecule with a double carbon-carbon bond, ~C=C~) monomer at a substrate held at room temperature. This thesis describes a dedicated iCVD reactor for polymer deposition, installed at Utrecht University, along with a reactor with a cooled substrate holder in an existing HWCVD multi-chamber setup for low-temperature silicon nitride (SiNx) depositions. The most important features of these reactors are described and the characterization techniques are explained. This thesis contains four new

  8. QUALITY ASSURANCE PROGRAM FOR WET DEPOSITION SAMPLING AND CHEMICAL ANALYSES FOR THE NATIONAL TRENDS NETWORK.

    USGS Publications Warehouse

    Schroder, LeRoy J.; Malo, Bernard A.

    1985-01-01

    The purpose of the National Trends Network is to delineate the major inorganic constituents in the wet deposition in the United States. The approach chosen to monitor the Nation's wet deposition is to install approximately 150 automatic sampling devices with at least one collector in each state. Samples are collected at one week intervals, removed from collectors, and transported to an analytical laboratory for chemical analysis. The quality assurance program has divided wet deposition monitoring into 5 parts: (1) Sampling site selection, (2) sampling device, (3) sample container, (4) sample handling, and (5) laboratory analysis. Each of these five components is being examined using existing designs or new designs. Each existing or proposed sampling site is visited and a criteria audit is performed.

  9. Plasma-enhanced-chemical-vapor-deposited ultralow k for a postintegration porogen removal approach

    SciTech Connect

    Jousseaume, V.; Favennec, L.; Zenasni, A.; Passemard, G.

    2006-05-01

    Conventional Cu-ultra low K (ULK) integration schemes lead to a drastic increase of the effective dielectric constant due to porous material degradation during process steps. Although a postintegration porogen removal scheme allows overcoming these issues, only spin-on dielectrics were developed to validate this approach. In this letter, plasma-enhanced chemical-vapor deposition is used to deposit ULK dielectric (k<2.5). The precursor chemistry and the deposition conditions have been chosen to obtain a material with the required characteristics to use a postintegration porogen removal approach: porogen thermal stability up to 325 deg. C, good mechanical properties of the hybrid film, no metallic barrier diffusion in the film, and a minimal shrinkage after the porogen removal treatment.

  10. Metal-free plasma-enhanced chemical vapor deposition of large area nanocrystalline graphene

    NASA Astrophysics Data System (ADS)

    Schmidt, Marek E.; Xu, Cigang; Cooke, Mike; Mizuta, Hiroshi; Chong, Harold M. H.

    2014-04-01

    This paper reports on large area, metal-free deposition of nanocrystalline graphene (NCG) directly onto wet thermally oxidized 150 mm silicon substrates using parallel-plate plasma-enhanced chemical vapor deposition. Thickness non-uniformities as low as 13% are achieved over the whole substrate. The cluster size {{L}_{\\text{a}}} of the as-obtained films is determined from Raman spectra and lies between 1.74 and 2.67 nm. The film uniformity was further confirmed by Raman mapping. The sheet resistance {{R}_{\\text{sq}}} of 3.73 \\text{k}\\Omega and charge carrier mobility μ of 2.49\\;\\text{c}{{\\text{m}}^{2}}\\;{{\\text{V}}^{-1}}\\;{{\\text{s}}^{-1}} are measured. We show that the NCG films can be readily patterned by reactive ion etching. NCG is also successfully deposited onto quartz and sapphire substrates and showed >85% optical transparency in the visible light spectrum.

  11. Nanosoldering carbon nanotube junctions by local chemical vapor deposition for improved device performance.

    PubMed

    Do, Jae-Won; Estrada, David; Xie, Xu; Chang, Noel N; Mallek, Justin; Girolami, Gregory S; Rogers, John A; Pop, Eric; Lyding, Joseph W

    2013-01-01

    The performance of carbon nanotube network (CNN) devices is usually limited by the high resistance of individual nanotube junctions (NJs). We present a novel method to reduce this resistance through a nanoscale chemical vapor deposition (CVD) process. By passing current through the devices in the presence of a gaseous CVD precursor, localized nanoscale Joule heating induced at the NJs stimulates the selective and self-limiting deposition of metallic nanosolder. The effectiveness of this nanosoldering process depends on the work function of the deposited metal (here Pd or HfB2), and it can improve the on/off current ratio of a CNN device by nearly an order of magnitude. This nanosoldering technique could also be applied to other device types where nanoscale resistance components limit overall device performance. PMID:24215439

  12. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect

    Harris Kagan; K.K. Gan; Richard Kass

    2009-03-31

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2009, and the LHC upgrades expected in 2013, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  13. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect

    Rainer Wallny

    2012-10-15

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2010, and the LHC upgrades expected in 2015, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed and operational in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  14. Surface melting of copper during graphene growth by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Pakhnevich, A. A.; Golod, S. V.; Prinz, V. Ya

    2015-11-01

    Evidence for the presence of a liquid phase on a copper surface during graphene growth by chemical vapour deposition at temperatures of 1000 and 1050 °C has been experimentally obtained. It was established that, first, the liquid phase forms a groove structure and bubble-like nanoobjects on the copper surface. Second, the liquid phase promotes the propagation of the wavy relief of a growing graphene film to the adjacent copper, and, third, the surface flows of the liquid phase can influence the waviness and orientation of the graphene islands. From the obtained data, it was concluded that surface melting plays an important role in graphene formation by chemical vapour deposition at temperatures below the melting point of copper.

  15. Characterization of chemical-vapor-deposited low-k thin films using x-ray porosimetry

    NASA Astrophysics Data System (ADS)

    Lee, Hae-Jeong; Lin, Eric K.; Bauer, Barry J.; Wu, Wen-li; Hwang, Byung Keun; Gray, William D.

    2003-02-01

    Trimethylsilane-based carbon-doped silica films prepared with varying chemical-vapor-deposition process conditions were characterized using x-ray reflectivity and porosimetry to measure the film thickness, average film density, density depth profile, wall density, and porosity. Samples deposited under single or dual frequency conditions with either N2O or O2 as an oxidant were compared. The structural parameters were correlated with the chemical bond structure measured by Fourier transform infrared spectroscopy. The density profiles of the porous films were uniform with a slight densification at the film surface. The distribution of pores was also uniform through the film. Films prepared under a single frequency and/or N2O atmosphere had the lowest film density, wall density, and dielectric constant. The porosities of the films were similar and the pore sizes were less than 10 Å.

  16. Kinetics of gas-phase reactions relevant to the chemical vapor deposition of indium compounds

    SciTech Connect

    Allendorf, M.D.; McDaniel, A.H.

    1998-03-01

    Compounds containing indium are of interest for electronic and optical applications. These compounds include III-V semiconductors such as InP and InAs used in both electronic devices and solar cells, and indium tin oxide, which can be used for optical memory and antireflection coatings. Chemical vapor deposition (CVD) techniques can be used to deposit these materials on a variety of substrates. At the temperatures typically employed (550--900 K), gas-phase chemical reactions involving the indium-containing precursor can occur. The kinetics of trimethylindium pyrolysis are investigated in a flow reactor equipped with a molecular-beam mass-spectrometric sampling system. Data are analyzed using a new computational approach that accounts for heat and mass transport in the reactor. The measured activation energy, 46.2 kcal/mol, is in good agreement with previously reported values.

  17. Thin Films of Gallium Arsenide and Gallium Aluminum Arsenide by Metalorganic Chemical Vapor Deposition.

    NASA Astrophysics Data System (ADS)

    Look, Edward Gene Lun

    Low pressure metalorganic chemical vapor deposition (LPMOCVD) of thin films of gallium arsenide (GaAs) and gallium aluminum arsenide (GaAlAs) was performed in a horizontal cold wall chemical vapor deposition (CVD) reactor. The organometallic (group III) sources were triethylgallium (TEGa) and triethylaluminum (TEAl), used in conjunction with arsine (AsH_3) as the group V source. It was found that growth parameters such as growth temperature, pressure, source flow rates and temperatures have a profound effect on the film quality and composition. Depending on the particular combination of conditions, both the surface and overall morphologies may be affected. The films were nondestructively analyzed by Raman and photoreflectance spectroscopies, x-ray diffraction and rocking curve studies, scanning electron microscopy, energy dispersive spectroscopy, Hall measurements and film thicknesses were determined with a step profilometer.

  18. Investigations of chemical vapor deposition of GaN using synchrotron radiation

    SciTech Connect

    Thompson, C.; Stephenson, G. B.; Eastman, J. A.; Munkholm, A.; Auciello, O.; Murty, M. V. R.; Fini, P.; DenBaars, S. P.; Speck, J. S.

    2000-05-25

    The authors apply synchrotron x-ray analysis techniques to probe the surface structure of GaN films during synthesis by metal-organic chemical vapor deposition (MOCVD). Their approach is to observe the evolution of surface structure and morphology in real time using grazing incidence x-ray scattering (GIXS). This technique combines the ability of x-rays to penetrate the chemical vapor deposition environment for in situ measurements, with the sensitivity of GIXS to atomic scale structure. In this paper they present examples from some of their studies of growth modes and surface evolution as a function of process conditions that illustrate the capabilities of synchrotron x-ray analysis during MOCVD growth. They focus on studies of the homoepitaxial growth mode, island coarsening dynamics, and effects of impurities.

  19. Control of polyaniline deposition on microporous cellulose ester membranes by in situ chemical polymerization.

    PubMed

    Qaiser, Asif A; Hyland, Margaret M; Patterson, Darrell A

    2009-11-12

    Polyaniline (PANI) can be deposited either on the surface or in the bulk of a microporous membrane by various chemical oxidative polymerization techniques. Each technique has distinctive effects on the PANI site and extent of deposition on the base membrane. In the present study, mixed cellulose ester (ME) membranes with tortuous pore morphology were used as base membranes. The chemical oxidative polymerization techniques employed, included polymerization using an in-house-built two-compartment permeation cell. The resultant composite membranes have been characterized by scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy (FTIR-ATR), and electrical conductivity measurements. The results showed that PANI was layered on the pore walls of the membrane using two-compartment permeation cell. Vapor-phase polymerization yielded a surface layer of PANI with little deposition in the bulk. A distorted PANI surface layer was achieved by solution-phase (dip) polymerization. Moreover, asymmetric PANI deposition within the membrane bulk was evidenced using two-compartment permeation cell. Composite membranes synthesized using two-compartment cell showed highest levels of conductivity (approximately 10(-2) S/cm) as compared to the membranes modified by single-step solution-phase polymerization. FTIR-ATR results indicated the extent of PANI coating and its oxidation state which was identified as doped emeraldine PANI, from all the employed techniques. Asymmetric deposition and extent have been explained in terms of the physical and chemical reaction steps involved in the heterogeneous aniline polymerization reactions in the two-compartment cell technique. PMID:19888765

  20. Monocrystalline molybdenum silicide based quantum dot superlattices grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Savelli, Guillaume; Silveira Stein, Sergio; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent

    2016-09-01

    This paper presents the growth of doped monocrystalline molybdenum-silicide-based quantum dot superlattices (QDSL). This is the first time that such nanostructured materials integrating molybdenum silicide nanodots have been grown. QDSL are grown by reduced pressure chemical vapor deposition (RPCVD). We present here their crystallographic structures and chemical properties, as well as the influence of the nanostructuration on their thermal and electrical properties. Particularly, it will be shown some specific characteristics for these QDSL, such as a localization of nanodots between the layers, unlike other silicide based QDSL, an accumulation of doping atoms near the nanodots, and a strong decrease of the thermal conductivity obtained thanks to the nanostructuration.

  1. Synthesis of single-crystalline anisotropic gold nano-crystals via chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Manna, Sohini; Kim, Jong Woo; Takahashi, Yukiko; Shpyrko, Oleg G.; Fullerton, Eric E.

    2016-05-01

    We report on a novel one-step catalyst-free, thermal chemical vapor deposition procedure to synthesize gold nanocrystals on silicon substrates. This approach yields single-crystal nanocrystals with various morphologies, such as prisms, icosahedrons, and five-fold twinned decahedrons. Our approach demonstrates that high-quality anisotropic crystals composed of fcc metals can be produced without the need for surfactants or templates. Compared with the traditional wet chemical synthesis processes, our method enables direct formation of highly pure and single crystalline nanocrystals on solid substrates which have applications in catalysis. We investigated the evolution of gold nanocrystals and established their formation mechanism.

  2. STM study of monolayer MoS2 synthesized by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Mills, Adam; Chen, Chuanhui; Yu, Yifei; Cao, Linyui; Tao, Changgang

    2014-03-01

    Monolayer molybdenum disulfide (MoS2) , an atomically thin transition-metal dichalcogenide semiconductor with a direct band gap, as opposed to an indirect band gap in bulk MoS2, has recently captured a lot of research interest for its distinctive optical and electronic properties, and potential applications such as field effect transistors, optoelectronic devices and chemical sensors. Using scanning tunneling microscopy, we have investigated monolayer MoS2 synthesized by chemical vapor deposition. The structural and electronic properties of monolayer MoS2 grown on glassy carbon and other substrates will be presented. We will also discuss our preliminary scanning tunneling spectroscopy measurements on these samples.

  3. High-quality, faceted cubic boron nitride films grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhang, W. J.; Jiang, X.; Matsumoto, S.

    2001-12-01

    Thick cubic boron nitride (cBN) films showing clear crystal facets were achieved by chemical vapor deposition. The films show the highest crystallinity of cBN films ever achieved from gas phase. Clear evidence for the growth via a chemical route is obtained. A growth mechanism is suggested, in which fluorine preferentially etches hBN and stabilizes the cBN surface. Ion bombardment of proper energy activates the cBN surface bonded with fluorine so as to enhance the bonding probability of nitrogen-containing species on the F-stabilized B (111) surface.

  4. Local Polarization Dynamics in Chemical Solution Deposited PZT Capacitors by Switching Spectroscopy PFM

    SciTech Connect

    Seal, Katyayani; Bintachitt, Patamas; Jesse, Stephen; Morozovska, A. N.; Baddorf, Arthur P; Trolier-McKinstry, Susan; Kalinin, Sergei V

    2008-01-01

    The local polarization dynamics in chemical solution deposited PZT thin film capacitors were studied using spatially resolved spectroscopic measurements. 2D maps of switchable polarization as a function of bias window allow the voltage-dependence and spatial distribution of regions with reversible and irreversible wall motion to be mapped. Extension of the measurements to mapping the disorder potential controlling domain wall pinning enabling development of a spatially resolved Preisach model is discussed.

  5. Electrochromic properties of molybdenum trioxide thin films prepared by chemical vapor deposition

    SciTech Connect

    Maruyama, Toshiro; Kanagawa, Tetsuya

    1995-05-01

    Electrochromic molybdenum trioxide thin films were prepared by chemical vapor deposition. The source material was molybdenum carbonyl. Amorphous molybdenum trioxide thin films were produced at a substrate temperature 300 C. Reduction and oxidation of the films in a 0.3M LiClO{sub 4} propylene carbonate solution caused desirable changes in optical absorption. Coulometry indicated that the coloration efficiency was 25.8 cm{sup 2}/C.

  6. InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Levin, R. V.; Nevedomskii, V. N.; Pushnyi, B. V.; Bert, N. A.; Mizerov, M. N.

    2016-01-01

    The possibility of fabricating InAs/GaSb strained-layer superlattices by metalorganic chemical vapor deposition has been experimentally demonstrated. The results of transmission electron microscopy and photoluminescence spectroscopy investigations showed that the obtained structures comprise an InAs?GaSb superlattice on a GaSb substrate consisting of 2-nm-thick InAs and 3.3-nm-thick GaSb layers.

  7. Chemical Vapor Deposition of Large-Sized Hexagonal WSe₂ Crystals on Dielectric Substrates.

    PubMed

    Chen, Jianyi; Liu, Bo; Liu, Yanpeng; Tang, Wei; Nai, Chang Tai; Li, Linjun; Zheng, Jian; Gao, Libo; Zheng, Yi; Shin, Hyun Suk; Jeong, Hu Young; Loh, Kian Ping

    2015-11-01

    High-quality large-sized hexagoal WSe2 crystals can be grown on dielectric substrates using atmospheric chemical vapor deposition in the presence of hydrogen gas. These hexagonal crystals (lateral width >160 um) have a carrier mobility of 100 cm(2) V(-1) s(-1) and a photoresponsivity of ≈1100 mA W(-1), which is comparable to that of exfoliated flakes. PMID:26414106

  8. Metal-oxide-semiconductor characteristics of chemical vapor deposited cubic-SiC

    NASA Astrophysics Data System (ADS)

    Shibahara, K.; Nishino, S.; Matsunami, H.

    1984-11-01

    Thermal oxidation of chemical vapor deposited (CVD) cubic-SiC and fabrication of MOS diodes using a thermal oxide film were carried out. The thermal oxide was found to be SiO2 by Auger electron spectroscopic analysis. Capacitance-voltage curves of MOS diodes measured under the dark condition showed deep depletion characteristics. Inversion characteristics were observed under the illuminated condition for the first time.

  9. Synthesis of boron-doped graphene monolayers using the sole solid feedstock by chemical vapor deposition.

    PubMed

    Wang, Huan; Zhou, Yu; Wu, Di; Liao, Lei; Zhao, Shuli; Peng, Hailin; Liu, Zhongfan

    2013-04-22

    Substitutionally boron-doped monolayer graphene film is grown on a large scale by using a sole phenylboronic acid as the source in a low-pressure chemical vapor deposition system. The B-doped graphene film is a homogeneous monolayer with high crystalline quality, which exhibits a stable p-type doping behavior with a considerably high room-temperature carrier mobility of about 800 cm(2) V(-1) s(-1) . PMID:23463717

  10. Laser-induced chemical liquid phase deposition of copper from aqueous solutions without reducing agents

    SciTech Connect

    Kochemirovsky, V A; Tumkin, I I; Logunov, L S; Safonov, S V; Menchikov, Leonid G

    2012-08-31

    Laser-induced chemical liquid phase deposition of copper without a traditional reducing agent has been used for the first time to obtain conductive patterns on a dielectric surface having a reducing ability. It is shown that phenol-formaldehyde binder of the dielectric (glass fibre) can successfully play the role of a reducing agent in this process. The resulting copper sediments have low electrical resistance and good topology. (interaction of laser radiation with matter. laser plasmas)

  11. GaN Stress Evolution During Metal-Organic Chemical Vapor Deposition

    SciTech Connect

    Amano, H.; Chason, E.; Figiel, J.; Floro, J.A.; Han, J.; Hearne, S.; Hunter, J.; Tsong, I.

    1998-10-14

    The evolution of stress in gallium nitride films on sapphire has been measured in real- time during metal organic chemical vapor deposition. In spite of the 161%0 compressive lattice mismatch of GaN to sapphire, we find that GaN consistently grows in tension at 1050"C. Furthermore, in-situ stress monitoring indicates that there is no measurable relaxation of the tensile growth stress during annealing or thermal cycling.

  12. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    SciTech Connect

    Brusasco, R.M.

    1989-01-01

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs.

  13. Metal organic chemical vapor deposition of 111-v compounds on silicon

    DOEpatents

    Vernon, Stanley M.

    1986-01-01

    Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

  14. Monolayer Graphene Growth on Ni(111) by Low Temperature Chemical Vapor Deposition

    SciTech Connect

    Batzill, M.; Sutter, P.; Addou, R.; Dahal, A.

    2012-01-09

    In contrast to the commonly employed high temperature chemical vapor deposition growth that leads to multilayer graphene formation by carbon segregation from the bulk, we demonstrate that below 600 C graphene can be grown in a self-limiting monolayer growth process. Optimum growth is achieved at {approx}550 C. Above this temperature, carbon diffusion into the bulk is limiting the surface growth rate, while at temperatures below {approx}500 C a competing surface carbide phase impedes graphene formation.

  15. Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition

    PubMed Central

    Haniam, P.; Kunsombat, C.; Chiangga, S.; Songsasen, A.

    2014-01-01

    Thin films of cobalt oxides (CoO and Co3O4) fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures. PMID:24672354

  16. Synthesis of cobalt oxides thin films fractal structures by laser chemical vapor deposition.

    PubMed

    Haniam, P; Kunsombat, C; Chiangga, S; Songsasen, A

    2014-01-01

    Thin films of cobalt oxides (CoO and Co3O4) fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures. PMID:24672354

  17. A new doping method using metalorganics in chemical vapor deposition of 6H-SiC

    NASA Astrophysics Data System (ADS)

    Yoshida, S.; Sakuma, E.; Misawa, S.; Gonda, S.

    1984-01-01

    Aluminum doping was performed using triethylaluminum as the dopant in chemical vapor deposition of 6H-silicon carbide (SiC). Measurements on the electrical and cathodoluminescent properties of the epilayers indicate that the doping concentration of aluminum can be easily controlled by the flow rate of metalorganics. Electroluminescence was also observed for the pn junctions prepared by the successive growth of a nondoped n layer and a p layer doped with aluminum using metalorganics.

  18. Negative Electron Affinity Effect on the Surface of Chemical Vapor Deposited Diamond Polycrystalline Films

    NASA Technical Reports Server (NTRS)

    Krainsky, I. L.; Asnin, V. M.; Mearini, G. T.; Dayton, J. A., Jr.

    1996-01-01

    Strong negative electron affinity effects have been observed on the surface of as-grown chemical vapor deposited diamond using Secondary Electron Emission. The test samples were randomly oriented and the surface was terminated with hydrogen. The effect appears as an intensive peak in the low energy part of the spectrum of the electron energy distribution and may be described in the model of effective negative electron affinity.

  19. Microstructure of boron nitride coated on nuclear fuels by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Durmazuçar, Hasan H.; Gündüz, Güngör; Toker, Canan

    1998-08-01

    Three nuclear fuels, pure urania, 5% and 10% gadolinia containing fuels were coated with boron nitride to improve nuclear and physical properties. Coating was done by plasma enhanced chemical vapor deposition technique by using boron trichloride and ammonia. The specimens were examined under a scanning electron microscope. Boron nitride formed a grainy structure on all fuels. Gadolinia decreased the grain size of boron nitride. The fractal dimensions of fragmentation and of area-perimeter relation were determined.

  20. Conductivity of Thin Films Based on Single-Walled Carbon Nanotubes Grown by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Rybakov, M. S.; Kosobutsky, A. V.; Sevostyanov, O. G.; Russakov, D. M.; Lomakin, M. V.; Chirkova, I. M.; Shandakov, S. D.

    2015-03-01

    Electrical and optical properties of thin films of single-walled carbon nanotubes (SWCNT) obtained by aerosol chemical vapor deposition using ethanol, ferrocene, and sulfur are studied. Structural and geometrical characteristics of the synthesis products are determined by the methods of Raman spectroscopy and transmission electron microscopy. The effect of sulfur on the properties of the SWCNTs and thin films based on them is found.

  1. Chemical vapour deposition growth and Raman characterization of graphene layers and carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Lai, Y.-C.; Rafailov, P. M.; Vlaikova, E.; Marinova, V.; Lin, S. H.; Yu, P.; Yu, S.-C.; Chi, G. C.; Dimitrov, D.; Sveshtarov, P.; Mehandjiev, V.; Gospodinov, M. M.

    2016-02-01

    Single-layer graphene films were grown by chemical vapour deposition (CVD) on Cu foil. The CVD process was complemented by plasma enhancement to grow also vertically aligned multiwalled carbon nanotubes using Ni nanoparticles as catalyst. The obtained samples were characterized by Raman spectroscopy analysis. Nature of defects in the samples and optimal growth conditions leading to achieve high quality of graphene and carbon nanotubes are discussed.

  2. Gravity Effects in Carbon Nanotube Growth by Thermal Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, S.; Su, C. H.; Cochrane, J. C.; Lehoczky, S. L.; Cui, Y.; Burger, A.; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    Carbon nanotubes are synthesized using thermal chemical vapor deposition. The sizes of these carbon nanotubes (CNT) are quite uniform and the length of the tube is up to several tens of micrometers. With the substrate surface normal either along or against the gravity vector, different growth orientations of CNT are observed by scanning electron microscopy although the Raman spectra are similar for samples synthesized at different locations. These results suggest the gravitation effects in the growth of long and small diameter CNT.

  3. Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; McNatt, Jeremiah; Dickman, John E.; Jin, Michael H.-C.; Banger, Kulbinder K.; Kelly, Christopher V.; AquinoGonzalez, Angel R.; Rockett, Angus A.

    2006-01-01

    Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395 C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45, 1.43, 1.37, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03 percent.

  4. Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

    SciTech Connect

    Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D.; Yamasaki, Satoshi

    2014-12-08

    Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the doping efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects.

  5. SYNTHESIS AND CHARACTERIZATION OF SMART FUNCTIONAL COATINGS BY CHEMICAL SOLUTION DEPOSITION METHODS

    SciTech Connect

    Mendez-Torres, A.

    2011-07-19

    New coating technology enables the fabrication of low cost structural health monitoring (SHM) and tamper indication devices that can be employed to strengthen national and international safeguards objectives. In particular, such innovations could serve the safeguards community by improving both the timeliness of detection and confidence in verification and monitoring. This work investigates the synthesis of functional surface coatings using chemical solutions deposition methods. Chemical solution deposition has recently received attention in the materials research community due to its unique advantages such as low temperature processing, high homogeneity of final products and the ability to fabricate materials with controlled surface properties and pore structures. The synthesis of functional coatings aimed at modifying the materials conductivity and optical properties was investigated by the incorporation of transition element (e.g. Cr{sup +3}) and rare earth (e.g. Er{sup +3}) serving as dopants in a polymer or gel matrix. The structural and morphological investigation of the as-deposited films was carried out using UV/Vis and photoluminescence (PL) spectroscopy. The as deposited coating was further investigated by scanning electron microscopy and energy dispersive x-ray microscopy.

  6. Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

    NASA Astrophysics Data System (ADS)

    Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D.; Yamasaki, Satoshi; Koizumi, Satoshi

    2014-12-01

    Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the doping efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects.

  7. Growth mechanism of Co:TiO2 thin film deposited by metal organic chemical vapor deposition technique

    NASA Astrophysics Data System (ADS)

    Saripudin, A.; Arifin, P.

    2016-04-01

    In this research, we investigated the growth mechanism of cobalt-doped titanium dioxide (Co:TiO2) films. Thi Co:TiO2 thin films were grown on the n-type silicon substrate. The films were grown by metal organic chemical vapor deposition method. The growth temperature was varied of 325°C – 450°C. The films were characterized by SEM. Using Arheniu’s equation, it is known that the activation energy value of film growth is positive in the range of temperature of 325°C – 400°C and negative in the range of temperature of 400°C – 450°C. These results show that the decomposition rate in the range of temperature of 325°C – 400°C is due to diffusion phase of precursor gas. On the other hand, the decomposition rate decreased in the range of temperature of 400°C – 450°C because the precursor gas decreased, and the surface chemical reaction was high.

  8. Bipolar Switching Behavior of ZnO x Thin Films Deposited by Metalorganic Chemical Vapor Deposition at Various Growth Temperatures

    NASA Astrophysics Data System (ADS)

    Bae, Seonho; Kim, Dae-Sik; Jung, Seojoo; Jeong, Woo Seop; Lee, Jee Eun; Cho, Seunghee; Park, Junsung; Byun, Dongjin

    2015-11-01

    The bipolar resistive switching behaviors of ZnO films grown at various temperatures by metalorganic chemical vapor deposition have been investigated. The ZnO films were grown on Pt/Ti/SiO2/Si(100) substrate, and the ZnO growth temperature was varied from 300°C to 500°C in steps of 100°C. Rutherford backscattering spectroscopy analysis results showed that the chemical compositions of the ZnO films were oxygen-poor Zn1O0.9 at 300°C, stoichiometric Zn1O1 at 400°C, and oxygen-rich Zn1O1.3 at 500°C. Resistive switching properties were observed in the ZnO films grown at 300°C and 400°C. In contrast, high current, without switching properties, was found in the ZnO film grown at 500°C. The ZnO film grown at 500°C had higher concentration of both nonlattice oxygen (4.95%) and oxygen vacancy (3.23%) than those grown at 300°C or 400°C. The resistive switching behaviors of ZnO films are related to the ZnO growth temperature via the relative amount of oxygen vacancies in the film. Pt/ZnO/Pt devices showed asymmetric resistive switching with narrow dispersion of switching voltage.

  9. Annealing effects on the chemical deposited CdS films and the electrical properties of CdS/CdTe solar cells

    SciTech Connect

    Han, Junfeng; Liao, Cheng; Jiang, Tao; Fu, Ganhua; Krishnakumar, V.; Spanheimer, C.; Haindl, G.; Zhao, Kui; Klein, A.; Jaegermann, W.

    2011-02-15

    Graphical abstract: From XPS core level spectras, compared with as-depositing CdS (sample A), the Fermi level is shifting closer to the conduction band after annealing treatment in the oxygen (sample B) while it is shifting closer to the valence band after annealing treatment in the argon-hydrogen (sample C). That might be the main reason of the different performance of the final devices. The open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen, while the performance of the solar cell decreases when the CBD CdS is annealed with argon-hydrogen. Research highlights: {yields} Two different methods (oxidation and reduction) were used to anneal CdS films for CdTe solar cells. {yields} Electrical properties were analyzed by XPS (Fermi levels of CdS films). {yields} Annealing treatment in oxidation atmosphere could shift Fermi level of CdS film to higher position and consequently improve the CdS/CdTe junction and performance of solar cells. -- Abstract: CdS layers grown by chemical bath deposition (CBD) are annealed in the oxygen and argon-hydrogen atmosphere respectively. It has been found that the open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen before the deposition of CdTe by close spaced sublimation (CSS), while the performance of the solar cell decreases when the CBD CdS is annealed with argon-hydrogen. Electronic properties of the CdS films are investigated using X-ray photo-electron spectroscopy (XPS), which indicates that the Fermi level is shifting closer to the conduction band after annealing in the oxygen and consequently a higher open circuit voltage of the solar cell can be obtained.

  10. Rapid thermal chemical vapor deposition of thin silicon oxide films using silane and nitrous oxide

    NASA Astrophysics Data System (ADS)

    Xu, X. L.; Kuehn, R. T.; Wortman, J. J.; Öztürk, M. C.

    1992-06-01

    Thin (80-200 Å) silicon dioxide (SiO2) films have been deposited by low pressure rapid thermal chemical vapor deposition (RTCVD), using silane (SiH4) and nitrous oxide (N2O) as the reactive gases for the first time. A deposition rate of 55 Å/min has been achieved at 800 °C with a SiH4/N2O flow rate ratio of 2%. Auger electron spectroscopy (AES) and Rutherford back scattering spectroscopy (RBS) have shown a uniform and stoichiometric composition throughout the deposited oxide films. Electrical characterization of the films have shown an average catastrophic breakdown field of 13 MV/cm and a midgap interface trap density (Dit) of equal to or less than 5×1010 eV-1 cm-2. The results suggest that the deposited RTCVD SiO2 films using SiH4-N2O gas system may have the potential to be used as the gate dielectric in future low-temperature metal oxide semiconductor (MOS) device processes for ultralarge scale integration (ULSI).

  11. Chain Assemblies from Nanoparticles Synthesized by Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition: The Computational View.

    PubMed

    Mishin, Maxim V; Zamotin, Kirill Y; Protopopova, Vera S; Alexandrov, Sergey E

    2015-12-01

    This article refers to the computational study of nanoparticle self-organization on the solid-state substrate surface with consideration of the experimental results, when nanoparticles were synthesised during atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD). The experimental study of silicon dioxide nanoparticle synthesis by AP-PECVD demonstrated that all deposit volume consists of tangled chains of nanoparticles. In certain cases, micron-sized fractals are formed from tangled chains due to deposit rearrangement. This work is focused on the study of tangled chain formation only. In order to reveal their formation mechanism, a physico-mathematical model was developed. The suggested model was based on the motion equation solution for charged and neutral nanoparticles in the potential fields with the use of the empirical interaction potentials. In addition, the computational simulation was carried out based on the suggested model. As a result, the influence of such experimental parameters as deposition duration, particle charge, gas flow velocity, and angle of gas flow was found. It was demonstrated that electrical charges carried by nanoparticles from the discharge area are not responsible for the formation of tangled chains from nanoparticles, whereas nanoparticle kinetic energy plays a crucial role in deposit morphology and density. The computational results were consistent with experimental results. PMID:26682441

  12. Silica-titania composite aerogel photocatalysts by chemical liquid deposition of titania onto nanoporous silica scaffolds.

    PubMed

    Zu, Guoqing; Shen, Jun; Wang, Wenqin; Zou, Liping; Lian, Ya; Zhang, Zhihua

    2015-03-11

    Silica-titania composite aerogels were synthesized by chemical liquid deposition of titania onto nanoporous silica scaffolds. This novel deposition process was based on chemisorption of partially hydrolyzed titanium alkoxides from solution onto silica nanoparticle surfaces and subsequent hydrolysis and condensation to afford titania nanoparticles on the silica surface. The titania is homogeneously distributed in the silica-titania composite aerogels, and the titania content can be effectively controlled by regulating the deposition cycles. The resultant composite aerogel with 15 deposition cycles possessed a high specific surface area (SSA) of 425 m(2)/g, a small particle size of 5-14 nm, and a large pore volume and pore size of 2.41 cm(3)/g and 18.1 nm, respectively, after heat treatment at 600 °C and showed high photocatalytic activity in the photodegradation of methylene blue under UV-light irradiation. Its photocatalytic activity highly depends on the deposition cycles and heat treatment. The combination of small particle size, high SSA, and enhanced crystallinity after heat treatment at 600 °C contributes to the excellent photocatalytic property of the silica-titania composite aerogel. The higher SSAs compared to those of the reported titania aerogels (<200 m(2)/g at 600 °C) at high temperatures combined with the simple method makes the silica-titania aerogels promising candidates as photocatalysts. PMID:25664480

  13. Differing morphologies of textured diamond films with electrical properties made with microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lai, Wen Chi; Wu, Yu-Shiang; Chang, Hou-Cheng; Lee, Yuan-Haun

    2010-12-01

    This study investigates the orientation of textured diamond films produced through microwave plasma chemical vapor deposition (MPCVD) at 1200 W, 110 Torr, CH 4/H 2 = 1/20, with depositions times of 0.5-4.0 h. After a growth period of 2.0-4.0 h, this particular morphology revealed a rectangular structure stacked regularly on the diamond film. The orientation on {1 1 1}-textured diamond films grew a preferred orientation of {1 1 0} on the surface, as measured by XRD. The formation of the diamond epitaxial film formed textured octahedrons in ball shaped (or cauliflower-like) diamonds in the early stages (0.5 h), and the surface of the diamond film extended to pile the rectangular structure at 4.0 h. The width of the tier was approximately 200 nm at the 3.0 h point of deposition, according to TEM images. The results revealed that the textured diamond films showed two different morphological structures (typical ball shaped and rectangular diamonds), at different stages of the deposition period. The I- V characteristics of the oriented diamond films after 4.0 h of deposition time showed good conformity with the ohmic contact.

  14. Application of Chlorine-Assisted Chemical Vapor Deposition of Diamond at Low Temperatures

    NASA Technical Reports Server (NTRS)

    Pan, Chenyu; Altemir, David A.; Margrave, John L.; Hauge, Robert H.

    1994-01-01

    Low temperature deposition of diamond has been achieved by a chlorine-assisted diamond chemical vapor deposition (CA-CVD) process. This method begins with the thermal dissociation of molecular chlorine into atomic chlorine in a resistively heated graphite furnace at temperatures between 1300 and 1500 deg. C. The atomic chlorine, upon mixing, subsequently reacts with molecular hydrogen and hydrocarbons. The rapid exchange reactions between the atomic chlorine, molecular hydrogen, and hydrocarbons give rise to the atomic hydrogen and carbon precursors required for diamond deposition. Homoepitaxial diamond growth on diamond substrates has been studied over the substrate temperature range of 100-950 C. It was found that the diamond growth rates are approximately 0.2 microns/hr in the temperature range between 102 and 300 C and that the growth rates do not decrease significantly with a decrease in substrate temperature. This is unique because the traditional diamond deposition using H2/CH4 systems usually disappears at substrate temperatures below approx. 500 deg. C. This opens up a possible route to the deposition of diamond on low-melting point materials such as aluminum and its alloys.

  15. Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gates, S. M.; Neumayer, D. A.; Sherwood, M. H.; Grill, A.; Wang, X.; Sankarapandian, M.

    2007-05-01

    The preparation of ultralow dielectric constant porous silicon, carbon, oxygen, hydrogen alloy dielectrics, called "pSiCOH," using a production 200mm plasma enhanced chemical vapor deposition tool and a thermal treatment is reported here. The effect of deposition temperature on the pSiCOH film is examined using Fourier transform infrared (FTIR) spectroscopy, dielectric constant (k), and film shrinkage measurements. For all deposition temperatures, carbon in the final porous film is shown to be predominantly Si -CH3 species, and lower k is shown to correlate with increased concentration of Si -CH3. NMR and FTIR spectroscopies clearly detect the loss of a removable, unstable, hydrocarbon (CHx) phase during the thermal treatment. Also detected are increased cross-linking of the Si-O skeleton, and concentration changes for three distinct structures of carbon. In the as deposited films, deposition temperature also affects the hydrocarbon (CHx) content and the presence of C O and C C functional groups.

  16. Chemical cycling and deposition of atmospheric mercury: Global constraints from observations

    NASA Astrophysics Data System (ADS)

    Selin, Noelle E.; Jacob, Daniel J.; Park, Rokjin J.; Yantosca, Robert M.; Strode, Sarah; Jaeglé, Lyatt; Jaffe, Daniel

    2007-01-01

    We use a global 3-D model of atmospheric mercury (GEOS-Chem) to interpret worldwide observations of total gaseous mercury (TGM) and reactive gaseous mercury (RGM) in terms of the constraints they provide on the chemical cycling and deposition of mercury. Our simulation including a global mercury source of 7000 Mg yr-1 and a TGM lifetime of 0.8 years reproduces the magnitude and large-scale variability of TGM observations at land sites. However, it cannot capture observations of high TGM from ship cruises, implying a problem either in the measurements or in our fundamental understanding of mercury sources. Observed TGM seasonal variation at northern midlatitudes is consistent with a photochemical oxidation for Hg(0) partly balanced by photochemical reduction of Hg(II). Observations of increasing RGM with altitude imply a long lifetime of Hg(II) in the free troposphere. We find in the model that Hg(II) dominates over Hg(0) in the upper troposphere and stratosphere and that subsidence is the principal source of Hg(II) at remote surface sites. RGM observations at Okinawa Island (Japan) show large diurnal variability implying fast deposition, which we propose is due to RGM uptake by sea-salt aerosols. Observed mercury wet deposition fluxes in the United States show a maximum in the southeast, which we attribute to photochemical oxidation of the global Hg(0) pool. They also show a secondary maximum in the industrial Midwest due to regional emissions that is underestimated in the model, possibly because of excessive dry deposition relative to wet (dry deposition accounts for 68% of total mercury deposition in the United States in the model, but this is sensitive to the assumed phase of Hg(II)). We estimate that North American anthropogenic emissions contribute on average 20% to U.S. mercury deposition.

  17. Low temperature atmospheric pressure chemical vapor deposition of group 14 oxide films

    SciTech Connect

    Hoffman, D.M.; Atagi, L.M. |; Chu, Wei-Kan; Liu, Jia-Rui; Zheng, Zongshuang; Rubiano, R.R.; Springer, R.W.; Smith, D.C.

    1994-06-01

    Depositions of high quality SiO{sub 2} and SnO{sub 2} films from the reaction of homoleptic amido precursors M(NMe{sub 2})4 (M = Si,Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 {plus_minus} 5 atom %. They are deposited with growth rates from 380 to 900 {angstrom}/min. The refractive indexes of the SiO{sub 2} films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm{sup {minus}1}. X-Ray diffraction studies reveal that the SiO{sub 2} film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO{sub 2} films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10{sup {minus}2} to 10{sup {minus}3} {Omega}cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.

  18. Latest innovations in large area web coating technology via plasma enhanced chemical vapor deposition source technology

    SciTech Connect

    George, M. A.; Chandra, H.; Morse, P.; Madocks, J.

    2009-07-15

    In this article, the authors discuss the latest results of our development of large area plasma enhanced chemical vapor deposition (PECVD) source technologies for flexible substrates. A significant challenge is the economical application of thin films for use as vapor barriers, transparent conductive oxides, and optical interference thin films. Here at General Plasma the authors have developed two innovative PECVD source technologies that provide an economical alternative to low temperature sputtering technologies and enable some thin film materials not accessible by sputtering. The Penning Discharge Plasma (PDP trade mark sign ) source is designed for high rate direct PECVD deposition on insulating, temperature sensitive web [J. Modocks, Proceedings of the Society of Vacuum Coaters, 2003 (unpublished), p. 187]. This technology has been utilized to deposit SiO{sub 2} and SiC:H for barrier applications [V. Shamamian et al. Proceedings of the Flexible Displays and Manufacturing Conferrence, 2006 (unpublished)]. The Plasma Beam Source (PBS trade mark sign ) is a remote plasma source that is more versatile for deposition on not only insulating flexible substrates but also conductive or rigid substrates for deposition of thin films that are sensitive to the high ion bombardment flux inherent to the PDP trade mark sign technology. The authors have developed PBS thin film processes in our laboratory for deposition of SiO{sub 2}, SiC:O, SiN:C, SiN:H, ZnO, FeO{sub x}, and Al{sub 2}O{sub 3}. [M. A. George, Conference Proceedings of the Association of Industrial Metallizers, Coaters, and Laminators (AIMCAL), 2007 (unpublished)]. The authors discuss the design of the patented sources, plasma physics, and chemistry of the deposited thin films.

  19. Microstructural, chemical and textural characterization of ZnO nanorods synthesized by aerosol assisted chemical vapor deposition

    SciTech Connect

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Fuentes-Cobas, L.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C.; Pérez-García, S.A.; Miki-Yoshida, M.

    2014-12-15

    ZnO nanorods were synthesized by aerosol assisted chemical vapor deposition onto TiO{sub 2} covered borosilicate glass substrates. Deposition parameters were optimized and kept constant. Solely the effect of different nozzle velocities on the growth of ZnO nanorods was evaluated in order to develop a dense and uniform structure. The crystalline structure was characterized by conventional X-ray diffraction in grazing incidence and Bragg–Brentano configurations. In addition, two-dimensional grazing incidence synchrotron radiation diffraction was employed to determine the preferred growth direction of the nanorods. Morphology and growth characteristics analyzed by electron microscopy were correlated with diffraction outcomes. Chemical composition was established by X-ray photoelectron spectroscopy. X-ray diffraction results and X-ray photoelectron spectroscopy showed the presence of wurtzite ZnO and anatase TiO{sub 2} phases. Morphological changes noticed when the deposition velocity was lowered to the minimum, indicated the formation of relatively vertically oriented nanorods evenly distributed onto the TiO{sub 2} buffer film. By coupling two-dimensional X-ray diffraction and computational modeling with ANAELU it was proved that a successful texture determination was achieved and confirmed by scanning electron microscopy analysis. Texture analysis led to the conclusion of a preferred growth direction in [001] having a distribution width Ω = 20° ± 2°. - Highlights: • Uniform and pure single-crystal ZnO nanorods were obtained by AACVD technique. • Longitudinal and transversal axis parallel to the [001] and [110] directions, respectively. • Texture was determined by 2D synchrotron diffraction and electron microscopy analysis. • Nanorods have its [001] direction distributed close to the normal of the substrate. • Angular spread about the preferred orientation is 20° ± 2°.

  20. Temporal and spatial trends of chemical composition of wet deposition samples collected in Austria

    NASA Astrophysics Data System (ADS)

    Schreiner, Elisabeth; Kasper-Giebl, Anne; Lohninger, Hans

    2016-04-01

    Triggered by the occurrence of acid rain a sampling network for the collection of wet deposition samples was initiated in Austria in the early 1980s. Now the data set covers a time period of slightly more than 30 years for the stations being operable since the beginning. Sampling of rain water and snow was and is performed with Wet and Dry Only Samplers (WADOS) on a daily basis. Chemical analysis of rain water and snow samples comprised anions (chloride, nitrate, sulfate) and cations (sodium, ammonium, potassium, calcium and magnesium) as well as pH and electrical conductivity. Here we evaluate and discuss temporal trends of both, ion concentrations and wet deposition data for twelve sampling stations, which were operable for most of the observation period of 30 years. As expected concentrations and wet deposition loads of sulfate and acidity decreased significantly during the last three decades - which is also reflected by a strong decrease of sulfur emissions in Austria and neighboring countries. Regarding nitrate the decrease of concentrations and wet deposition loads is less pronounced. Again this is in accordance with changes in emission data. In case of ammonium even less stations showed a significant decrease of annual average concentrations and depositions. Reasons for that might be twofold. On one hand emissions of ammonia did not decrease as strongly as e.g. sulfur emissions. Furthermore local sources will be more dominant and can influence the year to year variability. Seasonality of ion concentrations and deposition loads were investigated using Fourier analysis. Sulfate, nitrate, ammonium, acidity and also precipitation amount showed characteristic seasonal patterns for most of the sites and for concentrations as well as deposition loads. However the maxima in ion concentrations and deposition loads were observed during different times of the year. Concentrations of basic cations and chloride, on the contrary, hardly showed any seasonality. However, as

  1. Influence of alkaline suspended particles on the chemical composition of acid deposition in Kaohsiung City, Taiwan

    SciTech Connect

    Yuan, C.S.; Lin, Z.J.; Wu, M.Y.; Liu, J.I.; Yuan, C.

    1998-12-31

    This study investigated the influence of alkaline suspended particles on the chemical composition of acid deposition both temporally and spatially in Kaohsiung metropolitan area in Taiwan. During the period of January--December, 1996, both wet and dry deposition samples were collected by automatic acid precipitation samplers at six sampling sites which covered the entire metropolitan area. Major cations (NH{sub 4}{sup +}, K{sup +}, Na{sup +}, Ca{sup +2}, and Mg{sup +2}) and anions (F{sup {minus}}, Cl{sup {minus}}, NO{sub 3}{sup {minus}}, and SO{sub 4}{sup {minus}2}) of acid deposition samples were analyzed in a central laboratory, while the pH value and conductivity of rainwater samples were measured in situ. Results from chemical analysis indicated that Ca{sup +2} was the most abundant cation in acid deposition samples. Major cations were Ca{sup +2} and NH{sub 4}{sup +}, while major anions were SO{sub 4}{sup {minus}2} and NO{sub 3}{sup {minus}}. This study also revealed that the pH value, suspended solids, Ca{sup +2}, and NH{sub 4}{sup +} of rainwater decreased with rainy time in a sequential rainwater sampling process. It was estimated that approximately 80% of suspended particles could be washed out by rain droplets in the first hour of raining process. Therefore, alkaline suspended particles in the atmosphere played an very important role on the chemical composition of acid precipitation in Kaohsiung metropolitan area in Taiwan.

  2. A new sampler for collecting separate dry and wet atmospheric depositions of trace organic chemicals

    NASA Astrophysics Data System (ADS)

    Waite, Don T.; Cessna, Allan J.; Gurprasad, Narine P.; Banner, James

    Studies conducted in Saskatchewan and elsewhere have demonstrated the atmospheric transport of agricultural pesticides and other organic contaminants and their deposition into aquatic ecosystems. To date these studies have focused on ambient concentrations in the atmosphere and in wet precipitation. To measure the dry deposition of organic chemicals, a new sampler was designed which uses a moving sheet of water to passively trap dry particles and gasses. The moving sheet of water drains into a reservoir and, during recirculation through the sampler, is passed through an XAD-2 resin column which adsorbs the trapped organic contaminants. All surfaces which contact the process water are stainless steel or Teflon. Chemicals collected can be related to airborne materials depositing into aquatic ecosystems. The sampler has received a United States patent (number 5,413,003 - 9 May 1996) with the Canadian patent pending. XAD-2 resin adsorption efficiencies for 10 or 50 μg fortifications of ten pesticides ranged from 76% for atrazine (2-chloro-4-ethylamino-6-isopropylamino- S-triazine) to 110% for triallate [ S-(2,3,3-trichloro-2-phenyl)bis(1-methylethyl)carbamothioate], dicamba (2-methoxy-3,6-dichlorobenzoic acid) and toxaphene (chlorinated camphene mixture). Field testing using duplicate samplers showed good reproducibility and amounts trapped were consistent with those from high volume and bulk pan samplers located on the same site. Average atmospheric dry deposition rates of three chemicals, collected for 5 weeks in May and June, were: dicamba, 69 ng m -2 da -1; 2,4-D (2,4-dichlorophenoxyacetic acid), 276 ng m -2 da -1: and, γ-HCH ( γ-1, 2, 3, 4, 5, 6-hexachlorocyclohexane), 327 ng m -2 da -1.

  3. Effects of digestion, chemical separation, and deposition on Po-210 quantitative analysis

    SciTech Connect

    Seiner, Brienne N.; Morley, Shannon M.; Beacham, Tere A.; Haney, Morgan M.; Gregory, Stephanie J.; Metz, Lori A.

    2014-10-01

    Polonium-210 is a radioactive isotope often used to study sedimentation processes, food chains, aerosol behavior, and atmospheric circulations related to environmental sciences. Materials for the analysis of Po-210 range from tobacco leaves or cotton fibers, to soils and sediments. The purpose of this work was to determine polonium losses from a variety of sample types (soil, cotton fiber, and air filter) due to digestion technique, chemical separation, and deposition method for alpha energy analysis. Results demonstrated that yields from a perchloric acid wet-ash were similar to that from a microwave digestion. Both were greater than the dry-ash procedure. The polonium yield from the perchloric acid wet ash was 87 ± 5%, the microwave digestion had a yield of 100 ± 7%, and the dry ash had a yield of 38 ± 5%. The chemical separation of polonium by an anion exchange resin was used only on the soil samples due to the complex nature of this sample. The yield of Po-209 tracer after chemical separation and deposition for alpha analysis was 83 ± 7% for the soil samples. Spontaneous deposition yields for the cotton and air filters were 87 ± 4% and 92 ± 6%, respectively. Based on the overall process yields for each sample type the amount of Po-210 was quantified using alpha energy analysis. The soil contained 0.18 ± 0.08 Bq/g, the cotton swipe contained 0.7 mBq/g, and the air filter contained 0.04 ± 0.02 mBq/g. High and robust yields of polonium are possible using a suitable digestion, separation, and deposition method.

  4. Comprehensive investigation of HgCdTe metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Raupp, Gregory B.

    1993-01-01

    The principal objective of this experimental and theoretical research program was to explore the possibility of depositing high quality epitaxial CdTe and HgCdTe at very low pressures through metalorganic chemical vapor deposition (MOCVD). We explored two important aspects of this potential process: (1) the interaction of molecular flow transport and deposition in an MOCVD reactor with a commercial configuration, and (2) the kinetics of metal alkyl source gas adsorption, decomposition and desorption from the growing film surface using ultra high vacuum surface science reaction techniques. To explore the transport-reaction issue, we have developed a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor which allows an estimate of wafer or substrate throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudo-steady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. The interactions of MOCVD precursors with Si and CdTe were investigated using temperature programmed desorption (TPD) in ultra high vacuum combined with Auger electron spectroscopy (AES). These studies revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe.

  5. MBMS studies of gas-phase kinetics in diamond chemical vapor deposition

    SciTech Connect

    Fox, C.A.; McMaster, M.C.; Tung, D.M.

    1995-03-01

    A molecular beam mass spectrometer system (MBMS) has been used to determine the near-surface gaseous composition involved in the low pressure chemical vapor deposition of diamond. With this system, radical and stable species can be detected with a sensitivity better than 10 ppm. Threshold ionization techniques have been employed to distinguish between radical species in the deposition environment from radical species generated by parent molecule cracking. An extensive calibration procedure was used to enable the quantitative determination of H-atom and CH{sub 3} radical mole fractions. Using the MBMS system, the gaseous composition involved in LPCVD of diamond has been measured for a wide variety of deposition conditions, including hot-filament gas activation, microwave-plasma gas activation, and a variety of precursor feed mixtures (ex: CH{sub 4}/H{sub 2}, C{sub 2}H{sub 2}/H{sub 2}). For microwave-plasma activation (MPCVD), the radical concentrations (H-atom and CH{sub 3} radicals) are independent of the identity of the precursor feed gas provided the input carbon mole fraction is constant. However, in hot-filament diamond deposition (HFCVD), the atomic hydrogen concentration decreased by an order of magnitude as the mole fraction of carbon in the precursor mixture is increased to .07; this sharp reduction has been attributed to filament poisoning of the catalytic tungsten surface via hydrocarbon deposition. Additionally, the authors find that the H-atom concentration is independent of the substrate temperature for both hot-filament and microwave plasma deposition; radial H-atom diffusion is invoked to explain this observation.

  6. A simple chemical method for deposition of electrochromic Prussian blue thin films

    SciTech Connect

    Demiri, Sani; Najdoski, Metodija; Velevska, Julijana

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer Prussian blue thin films were prepared by a simple chemical deposition method. Black-Right-Pointing-Pointer The films can be easily prepared from aqueous solution of Fe{sub 2}(SO{sub 4}){sub 3} and K{sub 4}[Fe(CN){sub 6}]. Black-Right-Pointing-Pointer The films show good electrochromic properties. Black-Right-Pointing-Pointer They change from deep blue color into green, and then back to blue and colorless. Black-Right-Pointing-Pointer The PB thin films exhibit stability and excellent reversibility. -- Abstract: This paper is about a recently developed new chemical method for deposition of Prussian blue thin films. The films are easily prepared by successive immersion of the substrates into an acidic aqueous solution of Fe{sub 2}(SO{sub 4}){sub 3} and K{sub 4}[Fe(CN){sub 6}]. It is calculated of the results from AFM analysis that the growth in the film thickness by one immersion cycle corresponds to an average increase of 6 nm. The characterization of the films with X-ray diffraction, SEM-EDS analysis and FTIR spectroscopy shows that the deposited material is amorphous hydrated Fe{sub 4}[Fe(CN){sub 6}]{sub 3}. The electrochromic properties are characterized by cyclic voltammetry and VIS spectrophotometry. The PB thin films exhibit stability and excellent reversibility, which make these films favorable for electrochromic devices.

  7. Functional metal oxide coatings by molecule-based thermal and plasma chemical vapor deposition techniques.

    PubMed

    Mathur, S; Ruegamer, T; Donia, N; Shen, H

    2008-05-01

    Deposition of thin films through vaccum processes plays an important role in industrial processing of decorative and functional coatings. Many metal oxides have been prepared as thin films using different techniques, however obtaining compositionally uniform phases with a control over grain size and distribution remains an enduring challenge. The difficulties are largely related to complex compositions of functional oxide materials, which makes a control over kinetics of nucleation and growth processes rather difficult to control thus resulting in non-uniform material and inhomogeneous grain size distribution. Application of tailor-made molecular precursors in low pressure or plasma-enhanced chemical vapor deposition (CVD) techniques offers a viable solution for overcoming thermodynamic impediments involved in thin film growth. In this paper molecule-based CVD of functional coatings is demonstrated for iron oxide (Fe2O3, Fe3O4), vanadium oxide (V2O5, VO2) and hafnium oxide (HfO2) phases followed by the characterization of their microstructural, compositional and functional properties which support the advantages of chemical design in simplifying deposition processes and optimizing functional behavior. PMID:18572690

  8. Heat-Resistant Co-W Catalytic Metals for Multilayer Graphene Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Ueno, Kazuyoshi; Karasawa, Yusuke; Kuwahara, Satoru; Baba, Shotaro; Hanai, Hitoshi; Yamazaki, Yuichi; Sakuma, Naoshi; Kajita, Akihiro; Sakai, Tadashi

    2013-04-01

    Multilayer graphene (MLG) is expected to be a low-resistance and high-reliability interconnect material replacing copper (Cu) in nanoscale interconnects. Chemical vapor deposition (CVD) on catalytic metals is expected as a practical method for MLG deposition. To obtain high-quality MLG films without catalyst agglomeration by CVD, heat-resistant Co-W catalytic metals were investigated. The agglomeration of the Co-W catalytic metals was suppressed by increasing the W composition; however, MLG deposition was suppressed at the same time. The effects of W addition on the MLG growth were discussed from the viewpoints of the crystallographic change of the Co-W catalysts and chemical reactions. It was found that the Co grain size was reduced and the fcc Co formation was suppressed by W addition. In addition, graphite formation was supposed to be suppressed by W addition owing to the formation of phases other than fcc Co according to the Co-W-C phase diagram. With the optimum W concentration, MLG crystallinity was improved by high-temperature CVD using the heat-resistant Co-W catalytic metals (0.7 at. %) without agglomeration, compared with that in the case of using pure-Co catalysts.

  9. TOPICAL REVIEW Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Hwang, Nong-Moon; Lee, Dong-Kwon

    2010-12-01

    The critical role of charged nanoclusters and nanoparticles in the growth of thin films and nanostructures by chemical vapour deposition (CVD) is reviewed. Advanced nanoparticle detection techniques have shown that charged gas-phase nuclei tend to be formed under conventional processing conditions of thin films and nanostructures by thermal, hot-wire and plasma CVD. The relation between gas-phase nuclei and thin film and nanostructure growth has not been clearly understood. In this review it will be shown that many films and nanostructures, which have been believed to grow by individual atoms or molecules, actually grow by the building blocks of such charged nuclei. This new growth mechanism was revealed in an attempt to explain many puzzling phenomena involved in the gas-activated diamond CVD process. Therefore, detailed thermodynamic and kinetic analyses will be made to draw the conclusion that the well-known phenomenon of deposition of less stable diamond with simultaneous etching of stable graphite should be an indication of diamond growth exclusively by charged nuclei formed in the gas phase. A similar logic was applied to the phenomenon of simultaneous deposition and etching of silicon, which also leads to the conclusion that silicon films by CVD should grow mainly by the building blocks of charged nuclei. This new mechanism of crystal growth appears to be general in many CVD and some physical vapour deposition (PVD) processes. In plasma CVD, this new mechanism has already been utilized to open a new field of plasma-aided nanofabrication.

  10. Plasma enhanced chemical vapor deposition of silicon oxide films with divinyldimethylsilane and tetravinylsilane

    SciTech Connect

    Park, Sung-Gyu; Rhee, Shi-Woo

    2006-03-15

    Carbon-doped silicon oxide (SiCOH) low-k films were deposited with plasma enhanced chemical vapor deposition (PECVD) using divinyldimethylsilane (DVDMS) with two vinyl groups and tetravinylsilane (TVS) with four vinyl groups compared with vinyltrimethylsilane (VTMS) with one vinyl group. With more vinyl groups in the precursor, due to the crosslinking of the vinyl groups, the film contains more of an organic phase and organic phase became less volatile. It was confirmed that the deposition rate, refractive index, and k value increase with more vinyl groups in the precursor molecule. After annealing, the SiCOH films deposited with DVDMS and TVS showed a low dielectric constant of 2.2 and 2.4 at optimum conditions, respectively. In both cases, the annealed film had low leakage current density (J=6.7x10{sup -7} A/cm{sup 2} for SiCOH film of DVDMS and J=1.18x10{sup -8} A/cm{sup 2} for SiCOH film of TVS at 1 MV/cm) and relatively high breakdown field strength (E>4.0 MV/cm at 1 mA/cm{sup 2}), which is comparable to those of PECVD SiO{sub 2}.

  11. Catalytic conversion of biomass pyrolysis-derived compounds with chemical liquid deposition (CLD) modified ZSM-5.

    PubMed

    Zhang, Huiyan; Luo, Mengmeng; Xiao, Rui; Shao, Shanshan; Jin, Baosheng; Xiao, Guomin; Zhao, Ming; Liang, Junyu

    2014-03-01

    Chemical liquid deposition (CLD) with KH550, TEOS and methyl silicone oil as the modifiers was used to modify ZSM-5 and deposit its external acid sites. The characteristics of modified catalysts were tested by catalytic conversion of biomass pyrolysis-derived compounds. The effects of different modifying conditions (deposited amount, temperature, and time) on the product yields and selectivities were investigated. The results show KH550 modified ZSM-5 (deposited amount of 4%, temperature of 20°C and time of 6h) produced the maximum yields of aromatics (24.5%) and olefins (16.5%), which are much higher than that obtained with original ZSM-5 catalyst (18.8% aromatics and 9.8% olefins). The coke yield decreased from 44.1% with original ZSM-5 to 26.7% with KH550 modified ZSM-5. The selectivities of low-molecule-weight hydrocarbons (ethylene and benzene) decreased, while that of higher molecule-weight hydrocarbons (propylene, butylene, toluene, and naphthalene) increased comparing with original ZSM-5. PMID:24413482

  12. Chemical vapour deposition of zeolitic imidazolate framework thin films.

    PubMed

    Stassen, Ivo; Styles, Mark; Grenci, Gianluca; Gorp, Hans Van; Vanderlinden, Willem; Feyter, Steven De; Falcaro, Paolo; Vos, Dirk De; Vereecken, Philippe; Ameloot, Rob

    2016-03-01

    Integrating metal-organic frameworks (MOFs) in microelectronics has disruptive potential because of the unique properties of these microporous crystalline materials. Suitable film deposition methods are crucial to leverage MOFs in this field. Conventional solvent-based procedures, typically adapted from powder preparation routes, are incompatible with nanofabrication because of corrosion and contamination risks. We demonstrate a chemical vapour deposition process (MOF-CVD) that enables high-quality films of ZIF-8, a prototypical MOF material, with a uniform and controlled thickness, even on high-aspect-ratio features. Furthermore, we demonstrate how MOF-CVD enables previously inaccessible routes such as lift-off patterning and depositing MOF films on fragile features. The compatibility of MOF-CVD with existing infrastructure, both in research and production facilities, will greatly facilitate MOF integration in microelectronics. MOF-CVD is the first vapour-phase deposition method for any type of microporous crystalline network solid and marks a milestone in processing such materials. PMID:26657328

  13. Photocatalytic Functional Coating of TiO2 Thin Film Deposited by Cyclic Plasma Chemical Vapor Deposition at Atmospheric Pressure

    NASA Astrophysics Data System (ADS)

    Kwon, Jung-Dae; Rha, Jong-Joo; Nam, Kee-Seok; Park, Jin-Seong

    2011-08-01

    Photocatalytic TiO2 thin films were prepared with titanium tetraisopropoxide (TTIP) using cyclic plasma chemical vapor deposition (CPCVD) at atmospheric pressure. The CPCVD TiO2 films contain carbon-free impurities up to 100 °C and polycrystalline anatase phases up to 200 °C, due to the radicals and ion-bombardments. The CPCVD TiO2 films have high transparency in the visible wavelength region and absorb wavelengths below 400 nm (>3.2 eV). The photocatalytic effects of the CPCVD TiO2 and commercial sprayed TiO2 films were measured by decomposing methylene blue (MB) solution under UV irradiation. The smooth CPCVD TiO2 films showed a relatively lower photocatalytic efficiency, but superior catalyst-recycling efficiency, due to their high adhesion strength on the substrates. This CPCVD technique may provide the means to produce photocatalytic thin films with low cost and high efficiency, which would be a reasonable candidate for practical photocatalytic applications, because of the reliability and stability of their photocatalytic efficiency in a practical environment.

  14. Hot-Wire Chemical Vapor Deposition Of Polycrystalline Silicon : From Gas Molecule To Solar Cell

    NASA Astrophysics Data System (ADS)

    van Veenendaal, P. A. T. T.

    2002-10-01

    Although the effort to investigate the use of renewable energy sources, such as wind and solar energy, has increased, their contribution to the total energy consumption remains insignificant. The conversion of solar energy into electricity through solar cells is one of the most promising techniques, but the use of these cells is limited by the high cost of electricity. The major contributions to these costs are the material and manufacturing costs. Over the past decades, the development of silicon based thin film solar cells has received much attention, because the fabrication costs are low. A promising material for use in thin film solar cells is polycrystalline silicon (poly-Si:H). A relatively new technique to deposit poly-Si:H is Hot-Wire Chemical Vapor Deposition (Hot-Wire CVD), in which the reactant gases are catalytically decomposed at the surface of a hot filament, mainly tungsten and tantalum. The main advantages of Hot-Wire CVD over PE-CVD are absence of ion bombardment, high deposition rate, low equipment cost and high gas utilization. This thesis deals with the full spectrum of deposition, characterization and application of poly-Si:H thin films, i.e. from gas molecule to solar cell. Studies on the decomposition of silane on the filament showed that the process is catalytic of nature and that silane is decomposed into Si and 4H. The dominant gas phase reaction is the reaction of Si and H with silane, resulting in SiH3, Si2H6, Si3H6 and H2SiSiH2. The film growth precursors are Si, SiH3 and Si2H4. Also, XPS results on used tantalum and tungsten filaments are discussed. The position dependent measurements show larger silicon contents at the ends of the tungsten filament, as compared to the middle, due to a lower filament temperature. This effect is insignificant for a tantalum filament. Deposition time dependent measurements show an increase in silicon content of the tungsten filament with time, while the silicon content on the tantalum filament saturates

  15. Giant spin Hall effect in graphene grown by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Balakrishnan, Jayakumar; Koon, Gavin Kok Wai; Avsar, Ahmet; Ho, Yuda; Lee, Jong Hak; Jaiswal, Manu; Baeck, Seung-Jae; Ahn, Jong-Hyun; Ferreira, Aires; Cazalilla, Miguel A.; Neto, Antonio H. Castro; Özyilmaz, Barbaros

    2014-09-01

    Advances in large-area graphene synthesis via chemical vapour deposition on metals like copper were instrumental in the demonstration of graphene-based novel, wafer-scale electronic circuits and proof-of-concept applications such as flexible touch panels. Here, we show that graphene grown by chemical vapour deposition on copper is equally promising for spintronics applications. In contrast to natural graphene, our experiments demonstrate that chemically synthesized graphene has a strong spin-orbit coupling as high as 20 meV giving rise to a giant spin Hall effect. The exceptionally large spin Hall angle ~0.2 provides an important step towards graphene-based spintronics devices within existing complementary metal-oxide-semiconductor technology. Our microscopic model shows that unavoidable residual copper adatom clusters act as local spin-orbit scatterers and, in the resonant scattering limit, induce transverse spin currents with enhanced skew-scattering contribution. Our findings are confirmed independently by introducing metallic adatoms-copper, silver and gold on exfoliated graphene samples.

  16. Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

    SciTech Connect

    Mantovan, R. Vangelista, S.; Wiemer, C.; Lamperti, A.; Tallarida, G.; Chikoidze, E.; Dumont, Y.; Fanciulli, M.

    2014-05-07

    R-Fe-O (R = rare earth) compounds have recently attracted high interest as potential new multiferroic materials. Here, we report a method based on the solid-state reaction between Er{sub 2}O{sub 3} and Fe layers, respectively grown by atomic layer deposition and chemical vapor deposition, to synthesize Er-Fe-O thin films. The reaction is induced by thermal annealing and evolution of the formed phases is followed by in situ grazing incidence X-ray diffraction. Dominant ErFeO{sub 3} and ErFe{sub 2}O{sub 4} phases develop following subsequent thermal annealing processes at 850 °C in air and N{sub 2}. Structural, chemical, and morphological characterization of the layers are conducted through X-ray diffraction and reflectivity, time-of-flight secondary ion-mass spectrometry, and atomic force microscopy. Magnetic properties are evaluated by magnetic force microscopy, conversion electron Mössbauer spectroscopy, and vibrating sample magnetometer, being consistent with the presence of the phases identified by X-ray diffraction. Our results constitute a first step toward the use of cost-effective chemical methods for the synthesis of this class of multiferroic thin films.

  17. Computational Study of Fluid Flow in a Rotational Chemical Vapor Deposition (CVD) Reactor

    NASA Astrophysics Data System (ADS)

    Wong, Sun; Jaluria, Yogesh

    2015-11-01

    In a typical Chemical Vapor Deposition (CVD) reactor, the flow of the reacting gases is one of the most important considerations that must be precisely controlled in order to obtain desired film quality. In general, the fluids enter the reactor chamber, travel over to the heated substrate area, where chemical reactions lead to deposition, and then exit the chamber. However, the flow inside the reactor chamber is not that simple. It would often develop recirculation at various locations inside the reactor due to reactor geometry, flow conditions, buoyancy effects from temperature differences and rotational effects cause by the rotating substrate. This recirculation causes hot spots and affects the overall performance of the reactor. A recirculation fluid packet experiences a longer residence time inside the reactor and, thus, it heats up to higher temperatures causing unwanted chemical reactions and decomposition. It decreases the grow rate and uniformity on the substrate. A mathematical and computational model has been developed to help identify these unwanted hot spots occurring inside the CVD reactor. The model can help identify the user parameters needed to reduce the recirculation effects and better control the flow. Flow rates, pressures, rotational speeds and temperatures can all affect the severity of the recirculation within the reactor. The model can also help assist future designs as the geometry plays a big role in controlling fluid flow. The model and the results obtained are discussed in detail.

  18. Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Jin, Yoonyoung; Ajmera, P. K.; Lee, G. S.; Singh, Varshni

    2005-09-01

    Low dielectric constant materials as interlayer dielectrics (ILDs) offer a way to reduce the RC time delay in high-performance ultra-large-scale integration (ULSI) circuits. Fluorocarbon films containing silicon have been developed for interlayer applications below 50-nm linewidth technology. The preparation of the films was carried out by plasma-enhanced chemical vapor deposition (PECVD) using gas precursors of tetrafluorocarbon as the source of active species and disilane (5 vol.% in helium) as a reducing agent to control the ratio of F/C in the films. The basic properties of the low dielectric constant (low-k) interlayer dielectric films are studied as a function of the fabrication process parameters. The electrical, mechanical, chemical, and thermal properties were evaluated including dielectric constant, surface planarity, hardness, residual stress, chemical bond structure, and shrinkage upon heat treatments. The deposition process conditions were optimized for film thermal stability while maintaining a relative dielectric value as low as 2.0. The average breakdown field strength was 4.74 MV/cm. The optical energy gap was in the range 2.2 2.4 eV. The hardness and residual stress in the optimized processed SiCF films were, respectively, measured to be in the range 1.4 1.78 GPa and in the range 11.6 23.2 MPa of compressive stress.

  19. MgB 2 thin films by hybrid physical-chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Xi, X. X.; Pogrebnyakov, A. V.; Xu, S. Y.; Chen, K.; Cui, Y.; Maertz, E. C.; Zhuang, C. G.; Li, Qi; Lamborn, D. R.; Redwing, J. M.; Liu, Z. K.; Soukiassian, A.; Schlom, D. G.; Weng, X. J.; Dickey, E. C.; Chen, Y. B.; Tian, W.; Pan, X. Q.; Cybart, S. A.; Dynes, R. C.

    2007-06-01

    Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB 2 thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB 2 films. The epitaxial pure MgB 2 films grown by HPCVD show higher-than-bulk Tc due to tensile strain in the films. The HPCVD films are the cleanest MgB 2 materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB 2. The carbon-alloyed HPCVD films demonstrate record-high Hc2 values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB 2 Josephson junctions.

  20. Remote catalyzation for growth of boron nitride nanotubes by low pressure chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wang, Liangjie; Li, Taotao; Ling, Lin; Luo, Jie; Zhang, Kai; Xu, Yancui; Lu, Huifen; Yao, Yagang

    2016-05-01

    Direct deposition of high purity and quality boron nitride nanotubes (BNNTs) on Si substrate were obtained using low pressure chemical vapor deposition (LPCVD). We find Fe-Mg-O species may act as catalysts for growing BNNTs. This synthesis process conforms to vapor-liquid-solid (VLS) growth mechanism. As-grown BNNTs also show a large optical energy band gap of 6.12 eV, approaching to hexagonal phase BN single crystals. Meanwhile, as-grown BNNTs exhibit an intense UV-emission band located at 345 nm and a weak deep band at 237 nm. Their optoelectronic properties make them have promising for future nanoscale deep-UV light emitting devices.