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Sample records for chemical vapour deposited

  1. Biocompatibility of chemical-vapour-deposited diamond.

    PubMed

    Tang, L; Tsai, C; Gerberich, W W; Kruckeberg, L; Kania, D R

    1995-04-01

    The biocompatibility of chemical-vapour-deposited (CVD) diamond surfaces has been assessed. Our results indicate that CVD diamond is as biocompatible as titanium (Ti) and 316 stainless steel (SS). First, the amount of adsorbed and 'denatured' fibrinogen on CVD diamond was very close to that of Ti and SS. Second, both in vitro and in vivo there appears to be less cellular adhesion and activation on the surface of CVD diamond surfaces compared to Ti and SS. This evident biocompatibility, coupled with the corrosion resistance and notable mechanical integrity of CVD diamond, suggests that diamond-coated surfaces may be highly desirable in a number of biomedical applications. PMID:7654876

  2. Chemical vapour deposition of zeolitic imidazolate framework thin films

    NASA Astrophysics Data System (ADS)

    Stassen, Ivo; Styles, Mark; Grenci, Gianluca; Gorp, Hans Van; Vanderlinden, Willem; Feyter, Steven De; Falcaro, Paolo; Vos, Dirk De; Vereecken, Philippe; Ameloot, Rob

    2016-03-01

    Integrating metal-organic frameworks (MOFs) in microelectronics has disruptive potential because of the unique properties of these microporous crystalline materials. Suitable film deposition methods are crucial to leverage MOFs in this field. Conventional solvent-based procedures, typically adapted from powder preparation routes, are incompatible with nanofabrication because of corrosion and contamination risks. We demonstrate a chemical vapour deposition process (MOF-CVD) that enables high-quality films of ZIF-8, a prototypical MOF material, with a uniform and controlled thickness, even on high-aspect-ratio features. Furthermore, we demonstrate how MOF-CVD enables previously inaccessible routes such as lift-off patterning and depositing MOF films on fragile features. The compatibility of MOF-CVD with existing infrastructure, both in research and production facilities, will greatly facilitate MOF integration in microelectronics. MOF-CVD is the first vapour-phase deposition method for any type of microporous crystalline network solid and marks a milestone in processing such materials.

  3. Light-induced chemical vapour deposition painting with titanium dioxide

    NASA Astrophysics Data System (ADS)

    Halary-Wagner, E.; Bret, T.; Hoffmann, P.

    2003-03-01

    Light-induced chemical vapour deposits of titanium dioxide are obtained from titanium tetra-isopropoxide (TTIP) in an oxygen and nitrogen atmosphere with a long pulse (250 ns) 308 nm XeCl excimer laser using a mask projection set-up. The demonstrated advantages of this technique are: (i) selective area deposition, (ii) precise control of the deposited thickness and (iii) low temperature deposition, enabling to use a wide range of substrates. A revolving mask system enables, in a single reactor load, to deposit shapes of controlled heights, which overlap to build up a complex pattern. Interferential multi-coloured deposits are achieved, and the process limitations (available colours and resolution) are discussed.

  4. Microscopic characterisation of suspended graphene grown by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Bignardi, Luca; van Dorp, Willem F.; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; de Hosson, Jeff Th. M.; Stöhr, Meike; Rudolf, Petra

    2013-09-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comparable with those of samples prepared by micromechanical cleaving of graphite. Measurements show that the area of high quality suspended graphene is limited by the folding of the graphene during the transfer.

  5. Microscopic characterisation of suspended graphene grown by chemical vapour deposition.

    PubMed

    Bignardi, Luca; van Dorp, Willem F; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; De Hosson, Jeff Th M; Stöhr, Meike; Rudolf, Petra

    2013-10-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comparable with those of samples prepared by micromechanical cleaving of graphite. Measurements show that the area of high quality suspended graphene is limited by the folding of the graphene during the transfer. PMID:23945527

  6. Chemical vapour deposition synthetic diamond: materials, technology and applications

    NASA Astrophysics Data System (ADS)

    Balmer, R. S.; Brandon, J. R.; Clewes, S. L.; Dhillon, H. K.; Dodson, J. M.; Friel, I.; Inglis, P. N.; Madgwick, T. D.; Markham, M. L.; Mollart, T. P.; Perkins, N.; Scarsbrook, G. A.; Twitchen, D. J.; Whitehead, A. J.; Wilman, J. J.; Woollard, S. M.

    2009-09-01

    Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form; however, non-planar geometries are also possible and enable a number of key applications. This paper reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, on the basis of the ability to synthesize a consistent and engineered high performance product.

  7. Chemical vapour deposition synthetic diamond: materials, technology and applications.

    PubMed

    Balmer, R S; Brandon, J R; Clewes, S L; Dhillon, H K; Dodson, J M; Friel, I; Inglis, P N; Madgwick, T D; Markham, M L; Mollart, T P; Perkins, N; Scarsbrook, G A; Twitchen, D J; Whitehead, A J; Wilman, J J; Woollard, S M

    2009-09-01

    Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form; however, non-planar geometries are also possible and enable a number of key applications. This paper reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, on the basis of the ability to synthesize a consistent and engineered high performance product. PMID:21832327

  8. Photo Initiated Chemical Vapour Deposition To Increase Polymer Hydrophobicity

    PubMed Central

    Bérard, Ariane; Patience, Gregory S.; Chouinard, Gérald; Tavares, Jason R.

    2016-01-01

    Apple growers face new challenges to produce organic apples and now many cover orchards with high-density polyethylene (HDPE) nets to exclude insects, rather than spraying insecticides. However, rainwater- associated wetness favours the development of apple scabs, Venturia inaequalis, whose lesions accumulate on the leaves and fruit causing unsightly spots. Treating the nets with a superhydrophobic coating should reduce the amount of water that passes through the net. Here we treat HDPE and polyethylene terephthalate using photo-initiated chemical vapour deposition (PICVD). We placed polymer samples in a quartz tube and passed a mixture of H2 and CO through it while a UVC lamp (254 nm) illuminated the surface. After the treatment, the contact angle between water droplets and the surface increased by an average of 20°. The contact angle of samples placed 70 cm from the entrance of the tube was higher than those at 45 cm and 20 cm. The PICVD-treated HDPE achieved a contact angle of 124°. Nets spray coated with a solvent-based commercial product achieved 180° but water ingress was, surprisingly, higher than that for nets with a lower contact angle. PMID:27531048

  9. Long distance spin communication in chemical vapour deposited graphene

    PubMed Central

    Kamalakar, M. Venkata; Groenveld, Christiaan; Dankert, André; Dash, Saroj P.

    2015-01-01

    Graphene is an ideal medium for long-distance spin communication in future spintronic technologies. So far, the prospect is limited by the smaller sizes of exfoliated graphene flakes and lower spin transport properties of large-area chemical vapour-deposited (CVD) graphene. Here we demonstrate a high spintronic performance in CVD graphene on SiO2/Si substrate at room temperature. We show pure spin transport and precession over long channel lengths extending up to 16 μm with a spin lifetime of 1.2 ns and a spin diffusion length ∼6 μm at room temperature. These spin parameters are up to six times higher than previous reports and highest at room temperature for any form of pristine graphene on industrial standard SiO2/Si substrates. Our detailed investigation reinforces the observed performance in CVD graphene over wafer scale and opens up new prospects for the development of lateral spin-based memory and logic applications. PMID:25857650

  10. Photo Initiated Chemical Vapour Deposition To Increase Polymer Hydrophobicity.

    PubMed

    Bérard, Ariane; Patience, Gregory S; Chouinard, Gérald; Tavares, Jason R

    2016-01-01

    Apple growers face new challenges to produce organic apples and now many cover orchards with high-density polyethylene (HDPE) nets to exclude insects, rather than spraying insecticides. However, rainwater- associated wetness favours the development of apple scabs, Venturia inaequalis, whose lesions accumulate on the leaves and fruit causing unsightly spots. Treating the nets with a superhydrophobic coating should reduce the amount of water that passes through the net. Here we treat HDPE and polyethylene terephthalate using photo-initiated chemical vapour deposition (PICVD). We placed polymer samples in a quartz tube and passed a mixture of H2 and CO through it while a UVC lamp (254 nm) illuminated the surface. After the treatment, the contact angle between water droplets and the surface increased by an average of 20°. The contact angle of samples placed 70 cm from the entrance of the tube was higher than those at 45 cm and 20 cm. The PICVD-treated HDPE achieved a contact angle of 124°. Nets spray coated with a solvent-based commercial product achieved 180° but water ingress was, surprisingly, higher than that for nets with a lower contact angle. PMID:27531048

  11. Long distance spin communication in chemical vapour deposited graphene

    NASA Astrophysics Data System (ADS)

    Kamalakar, M. Venkata; Groenveld, Christiaan; Dankert, André; Dash, Saroj P.

    2015-04-01

    Graphene is an ideal medium for long-distance spin communication in future spintronic technologies. So far, the prospect is limited by the smaller sizes of exfoliated graphene flakes and lower spin transport properties of large-area chemical vapour-deposited (CVD) graphene. Here we demonstrate a high spintronic performance in CVD graphene on SiO2/Si substrate at room temperature. We show pure spin transport and precession over long channel lengths extending up to 16 μm with a spin lifetime of 1.2 ns and a spin diffusion length ~6 μm at room temperature. These spin parameters are up to six times higher than previous reports and highest at room temperature for any form of pristine graphene on industrial standard SiO2/Si substrates. Our detailed investigation reinforces the observed performance in CVD graphene over wafer scale and opens up new prospects for the development of lateral spin-based memory and logic applications.

  12. Carbon Nanotubes/Nanofibers by Plasma Enhanced Chemical Vapour Deposition

    NASA Technical Reports Server (NTRS)

    Teo, K. B. K.; Hash, D. B.; Bell, M. S.; Chhowalla, M.; Cruden, B. A.; Amaratunga, G. A. J.; Meyyappan, M.; Milne, W. I.

    2005-01-01

    Plasma enhanced chemical vapour deposition (PECVD) has been recently used for the production of vertically aligned carbon nanotubedfibers (CN) directly on substrates. These structures are potentially important technologically as electron field emitters (e.g. microguns, microwave amplifiers, displays), nanoelectrodes for sensors, filter media, superhydrophobic surfaces and thermal interface materials for microelectronics. A parametric study on the growth of CN grown by glow discharge dc-PECVD is presented. In this technique, a substrate containing thin film Ni catalyst is exposed to C2H2 and NH3 gases at 700 C. Without plasma, this process is essentially thermal CVD which produces curly spaghetti-like CN as seen in Fig. 1 (a). With the plasma generated by biasing the substrate at -6OOV, we observed that the CN align vertically during growth as shown in Fig. l(b), and that the magnitude of the applied substrate bias affects the degree of alignment. The thickness of the thin film Ni catalyst was found to determine the average diameter and inversely the length of the CN. The yield and density of the CN were controlled by the use of different diffusion barrier materials under the Ni catalyst. Patterned CN growth [Fig. l(c)], with la variation in CN diameter of 4.1% and 6.3% respectively, is achieved by lithographically defining the Ni thin film prior to growth. The shape of the structures could be varied from very straight nanotube-like to conical tip-like nanofibers by increasing the ratio of C2H2 in the gas flow. Due to the plasma decomposition of C2H2, amorphous carbon (a-C) is an undesirable byproduct which could coat the substrate during CN growth. Using a combination of depth profiled Auger electron spectroscopy to study the substrate and in-situ mass spectroscopy to examine gas phase neutrals and ions, the optimal conditions for a-C free growth of CN is determined.

  13. Growth of graphene films by plasma enhanced chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Baraton, Laurent; Gangloff, Laurent; Xavier, Stéphane; Cojocaru, Costel S.; Huc, Vincent; Legagneux, Pierre; Lee, Young Hee; Pribat, Didier

    2009-08-01

    Since it was isolated in 2004, graphene, the first known 2D crystal, is the object of a growing interest, due to the range of its possible applications as well as its intrinsic properties. From large scale electronics and photovoltaics to spintronics and fundamental quantum phenomena, graphene films have attracted a large community of researchers. But bringing graphene to industrial applications will require a reliable, low cost and easily scalable synthesis process. In this paper we present a new growth process based on plasma enhanced chemical vapor deposition. Furthermore, we show that, when the substrate is an oxidized silicon wafer covered by a nickel thin film, graphene is formed not only on top of the nickel film, but also at the interface with the supporting SiO2 layer. The films grown using this method were characterized using classical methods (Raman spectroscopy, AFM, SEM) and their conductivity is found to be close to those reported by others.

  14. Characterisation of TiO 2 deposited by photo-induced chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Kaliwoh, Never; Zhang, Jun-Ying; Boyd, Ian W.

    2002-01-01

    We report the deposition of thin TiO 2 films on crystalline Si and quartz by photo-induced chemical vapour deposition (CVD) using UV excimer lamps employing a dielectric barrier discharge in krypton chloride (KrCl ∗) to provide intense narrow band radiation at λ=222 nm. The precursor used was titanium isopropoxide (TTIP). Films from around 20-510 nm in thickness with refractive indices from 2.20 to 2.54 were grown at temperatures between 50 and 350 °C. The higher refractive index values compare favourably with the value of 2.58 recorded for the bulk material. The measured deposition rate was around 50 nm/min at 350 °C. Fourier transform infrared spectroscopy (FTIR) revealed the presence of TiO 2 through the observation of a Ti-O absorption peak and the absence of OH in films deposited at 250-350 °C indicated relatively good quality films. The phase of films deposited at 200-350 °C was anatase as determined by X-ray diffraction.

  15. Fluorinated carboxylic membranes deposited by plasma enhanced chemical vapour deposition for fuel cell applications

    NASA Astrophysics Data System (ADS)

    Thery, J.; Martin, S.; Faucheux, V.; Le Van Jodin, L.; Truffier-Boutry, D.; Martinent, A.; Laurent, J.-Y.

    Among the fuel cell technologies, the polymer electrolyte membrane fuel cells (PEMFCs) are particularly promising because they are energy-efficient, clean, and fuel-flexible (i.e., can use hydrogen or methanol). The great majority of PEM fuel cells rely on a polymer electrolyte from the family of perfluorosulfonic acid membranes, nevertheless alternative materials are currently being developed, mainly to offer the alternative workout techniques which are required for the portable energy sources. Plasma polymerization represents a good solution, as it offers the possibility to deposit thin layer with an accurate and homogeneous thickness, even on 3D surfaces. In this paper, we present the results for the growth of proton conductive fluoro carboxylic membranes elaborated by plasma enhanced chemical vapour deposition. These membranes present conductivity values of the same order than the one of Nafion ®. The properties of the membrane, such as the chemical composition, the ionic conductivity, the swelling behaviour and the permeability were correlated to the plasma process parameters. The membranes were integrated in fuel cells on porous substrates and we present here the results regarding the barrier effect and the power output. Barrier effect similar to those of 40 μm Nafion ® layers was reached for 10 μm thick carboxylic membranes. Power outputs around 3 mW cm -2 were measured. We discuss the results regarding the gas barrier effect and the power outputs.

  16. Chemical vapour deposition of thermochromic vanadium dioxide thin films for energy efficient glazing

    SciTech Connect

    Warwick, Michael E.A.; Binions, Russell

    2014-06-01

    Vanadium dioxide is a thermochromic material that undergoes a semiconductor to metal transitions at a critical temperature of 68 °C. This phase change from a low temperature monoclinic structure to a higher temperature rutile structure is accompanied by a marked change in infrared reflectivity and change in resistivity. This ability to have a temperature-modulated film that can limit solar heat gain makes vanadium dioxide an ideal candidate for thermochromic energy efficient glazing. In this review we detail the current challenges to such glazing becoming a commercial reality and describe the key chemical vapour deposition technologies being employed in the latest research. - Graphical abstract: Schematic demonstration of the effect of thermochromic glazing on solar radiation (red arrow represents IR radiation, black arrow represents all other solar radiation). - Highlights: • Vanadium dioxide thin films for energy efficient glazing. • Reviews chemical vapour deposition techniques. • Latest results for thin film deposition for vanadium dioxide.

  17. Light induced chemical vapour deposition of titanium oxide thin films at room temperature

    NASA Astrophysics Data System (ADS)

    Halary, E.; Benvenuti, G.; Wagner, F.; Hoffmann, P.

    2000-02-01

    High resolution patterned deposition of titania is achieved by light induced chemical vapour deposition (LICVD), by imaging a mask onto a glass substrate. A long pulse XeCl Excimer laser (308 nm) provides, by perpendicular irradiation, the energy to convert titanium tetraisopropoxide (TTIP) vapour into titanium dioxide films, in an oxygen atmosphere, on unheated glass substrates. The amorphous titania deposits contain about 6% carbon contamination according to X-ray photoelectron spectroscopy (XPS) measurements. The deposition rate increases with increasing laser fluence until a maximum value is reached, then remains constant over a wide range, and finally decreases with further fluence increase due to titania ablation or thermal effects. The film thickness increases linearly with the number of pulses after a nucleation period. The strong influence of the laser pulse repetition rate on the growth rate and the thickness profile are reported.

  18. Surface melting of copper during graphene growth by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Pakhnevich, A. A.; Golod, S. V.; Prinz, V. Ya

    2015-11-01

    Evidence for the presence of a liquid phase on a copper surface during graphene growth by chemical vapour deposition at temperatures of 1000 and 1050 °C has been experimentally obtained. It was established that, first, the liquid phase forms a groove structure and bubble-like nanoobjects on the copper surface. Second, the liquid phase promotes the propagation of the wavy relief of a growing graphene film to the adjacent copper, and, third, the surface flows of the liquid phase can influence the waviness and orientation of the graphene islands. From the obtained data, it was concluded that surface melting plays an important role in graphene formation by chemical vapour deposition at temperatures below the melting point of copper.

  19. Chemical vapour deposition growth and Raman characterization of graphene layers and carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Lai, Y.-C.; Rafailov, P. M.; Vlaikova, E.; Marinova, V.; Lin, S. H.; Yu, P.; Yu, S.-C.; Chi, G. C.; Dimitrov, D.; Sveshtarov, P.; Mehandjiev, V.; Gospodinov, M. M.

    2016-02-01

    Single-layer graphene films were grown by chemical vapour deposition (CVD) on Cu foil. The CVD process was complemented by plasma enhancement to grow also vertically aligned multiwalled carbon nanotubes using Ni nanoparticles as catalyst. The obtained samples were characterized by Raman spectroscopy analysis. Nature of defects in the samples and optimal growth conditions leading to achieve high quality of graphene and carbon nanotubes are discussed.

  20. Structural Evolution of SiC Films During Plasma-Assisted Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Ding, Siye; Yan, Guanchao; Zhu, Xiaodong; Zhou, Haiyang

    2009-04-01

    Evolution of chemical bonding configurations for the films deposited from hexamethyldisiloxane (HMDSO) diluted with H2 during plasma assisted chemical vapour deposition is investigated. In the experiment a small amount of CH4 was added to adjust the plasma environment and modify the structure of the deposited films. The measurements of Raman spectroscopy and X-ray diffraction (XRD) revealed the production of 6H-SiC embedded in the amorphous matrix without the input of CH4. As CH4 was introduced into the deposition reaction, the transition of 6H-SiC to cubic SiC in the films took place, and also the film surfaces changed from a structure of ellipsoids to cauliflower-like shapes. With a further increase of CH4 in the flow ratio, the obtained films varied from Si-C bonding dominant to a sp2/sp3 carbon-rich composition.

  1. Thin-Film Deposition of Metal Oxides by Aerosol-Assisted Chemical Vapour Deposition: Evaluation of Film Crystallinity

    NASA Astrophysics Data System (ADS)

    Takeuchi, Masahiro; Maki, Kunisuke

    2007-12-01

    Sn-doped In2O3 (ITO) thin films are deposited on glass substrates using 0.2 M aqueous and methanol solutions of InCl3(4H2O) with 5 mol % SnCl2(2H2O) by aerosol-assisted chemical vapour deposition under positive and negative temperature gradient conditions. The film crystallinity is evaluated by determining the film thickness dependence of X-ray diffraction peak height. When using aqueous solution, the ITO films grow with the same crystallinity during the deposition, but when using methanol solution, the preferred orientation of ITO changes during the deposition.

  2. Chemical vapour deposition diamond coating on tungsten carbide dental cutting tools

    NASA Astrophysics Data System (ADS)

    Sein, H.; Ahmed, W.; Rego, C. A.; Jones, A. N.; Amar, M.; Jackson, M.; Polini, R.

    2003-10-01

    Diamond coatings on Co cemented tungsten carbide (WC-Co) hard metal tools are widely used for cutting non-ferrous metals. It is difficult to deposit diamond onto cutting tools, which generally have a complex geometry, using a single step growth process. This paper focuses on the deposition of polycrystalline diamond films onto dental tools, which possess 3D complex or cylindrical shape, employing a novel single step chemical vapour deposition (CVD) growth process. The diamond deposition is carried out in a hot filament chemical vapour deposition (HFCVD) reactor with a modified filament arrangement. The filament is mounted vertically with the drill held concentrically in between the filament coils, as opposed to the commonly used horizontal arrangement. This is a simple and inexpensive filament arrangement. In addition, the problems associated with adhesion of diamond films on WC-Co substrates are amplified in dental tools due to the very sharp edges and unpredictable cutting forces. The presence of Co, used as a binder in hard metals, generally causes poor adhesion. The amount of metallic Co on the surface can be reduced using a two step pre-treatment employing Murakami etching followed by an acid treatment. Diamond films are examined in terms of their growth rate, morphology, adhesion and cutting efficiency. We found that in the diamond coated dental tool the wear rate was reduced by a factor of three as compared to the uncoated tool.

  3. TOPICAL REVIEW: A review of plasma enhanced chemical vapour deposition of carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Meyyappan, M.

    2009-11-01

    Plasma enhanced chemical vapour deposition (PECVD) has been widely discussed in the literature for the growth of carbon nanotubes (CNTs) and carbon nanofibres (CNFs) in recent years. Advantages claimed include lower growth temperatures relative to thermal CVD and the ability to grow individual, free-standing, vertical CNFs instead of tower-like structures or ensembles. This paper reviews the current status of the technology including equipment, plasma chemistry, diagnostics and modelling, and mechanisms. Recent accomplishments include PECVD of single-walled CNTs and growth at low temperatures for handling delicate substrates such as glass.

  4. Large gauge factor of hot wire chemical vapour deposition in-situ boron doped polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    Grech, David; Tarazona, Antulio; De Leon, Maria Theresa; Kiang, Kian S.; Zekonyte, Jurgita; Wood, Robert J. K.; Chong, Harold M. H.

    2016-04-01

    Polysilicon piezoresistors with a large longitudinal gauge factor (GF) of 44 have been achieved using in-situ boron doped hot-wire chemical vapour deposition (HWCVD). This GF is a consequence of a high quality p-type doped polysilicon with a crystal volume of 97% and an average grain size of 150 nm, estimated using Raman spectroscopy and atomic force microscopy (AFM) respectively. The measured minimum Hooge factor associated to the 1/f noise of the polysilicon piezoresistors is 1.4 × 10‑3. These results indicate that HWCVD polysilicon is a suitable piezoresistive material for micro-electro-mechanical systems (MEMS) applications.

  5. TOPICAL REVIEW Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Hwang, Nong-Moon; Lee, Dong-Kwon

    2010-12-01

    The critical role of charged nanoclusters and nanoparticles in the growth of thin films and nanostructures by chemical vapour deposition (CVD) is reviewed. Advanced nanoparticle detection techniques have shown that charged gas-phase nuclei tend to be formed under conventional processing conditions of thin films and nanostructures by thermal, hot-wire and plasma CVD. The relation between gas-phase nuclei and thin film and nanostructure growth has not been clearly understood. In this review it will be shown that many films and nanostructures, which have been believed to grow by individual atoms or molecules, actually grow by the building blocks of such charged nuclei. This new growth mechanism was revealed in an attempt to explain many puzzling phenomena involved in the gas-activated diamond CVD process. Therefore, detailed thermodynamic and kinetic analyses will be made to draw the conclusion that the well-known phenomenon of deposition of less stable diamond with simultaneous etching of stable graphite should be an indication of diamond growth exclusively by charged nuclei formed in the gas phase. A similar logic was applied to the phenomenon of simultaneous deposition and etching of silicon, which also leads to the conclusion that silicon films by CVD should grow mainly by the building blocks of charged nuclei. This new mechanism of crystal growth appears to be general in many CVD and some physical vapour deposition (PVD) processes. In plasma CVD, this new mechanism has already been utilized to open a new field of plasma-aided nanofabrication.

  6. Chemical vapour deposition of zeolitic imidazolate framework thin films.

    PubMed

    Stassen, Ivo; Styles, Mark; Grenci, Gianluca; Gorp, Hans Van; Vanderlinden, Willem; Feyter, Steven De; Falcaro, Paolo; Vos, Dirk De; Vereecken, Philippe; Ameloot, Rob

    2016-03-01

    Integrating metal-organic frameworks (MOFs) in microelectronics has disruptive potential because of the unique properties of these microporous crystalline materials. Suitable film deposition methods are crucial to leverage MOFs in this field. Conventional solvent-based procedures, typically adapted from powder preparation routes, are incompatible with nanofabrication because of corrosion and contamination risks. We demonstrate a chemical vapour deposition process (MOF-CVD) that enables high-quality films of ZIF-8, a prototypical MOF material, with a uniform and controlled thickness, even on high-aspect-ratio features. Furthermore, we demonstrate how MOF-CVD enables previously inaccessible routes such as lift-off patterning and depositing MOF films on fragile features. The compatibility of MOF-CVD with existing infrastructure, both in research and production facilities, will greatly facilitate MOF integration in microelectronics. MOF-CVD is the first vapour-phase deposition method for any type of microporous crystalline network solid and marks a milestone in processing such materials. PMID:26657328

  7. Giant spin Hall effect in graphene grown by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Balakrishnan, Jayakumar; Koon, Gavin Kok Wai; Avsar, Ahmet; Ho, Yuda; Lee, Jong Hak; Jaiswal, Manu; Baeck, Seung-Jae; Ahn, Jong-Hyun; Ferreira, Aires; Cazalilla, Miguel A.; Neto, Antonio H. Castro; Özyilmaz, Barbaros

    2014-09-01

    Advances in large-area graphene synthesis via chemical vapour deposition on metals like copper were instrumental in the demonstration of graphene-based novel, wafer-scale electronic circuits and proof-of-concept applications such as flexible touch panels. Here, we show that graphene grown by chemical vapour deposition on copper is equally promising for spintronics applications. In contrast to natural graphene, our experiments demonstrate that chemically synthesized graphene has a strong spin-orbit coupling as high as 20 meV giving rise to a giant spin Hall effect. The exceptionally large spin Hall angle ~0.2 provides an important step towards graphene-based spintronics devices within existing complementary metal-oxide-semiconductor technology. Our microscopic model shows that unavoidable residual copper adatom clusters act as local spin-orbit scatterers and, in the resonant scattering limit, induce transverse spin currents with enhanced skew-scattering contribution. Our findings are confirmed independently by introducing metallic adatoms-copper, silver and gold on exfoliated graphene samples.

  8. Hot-wire chemical vapour deposition at low substrate temperatures for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Bakker, R.

    2010-09-01

    The need for large quantities of rapidly and cheaply produced electronic devices has increased rapidly over the past decades. The transistors and diodes that are used to build these devices are predominantly made of crystalline silicon. Since crystalline silicon is very expensive to produce on a large scale and cannot be directly deposited on plastic substrates, much research is being done on thin film amorphous or nanocrystalline semiconductors and insulators. Hot-wire chemical vapour deposition (HWCVD) is a novel, low cost, and convenient way to deposit these materials. The process can be controlled in such a way that specific chemical reactions take place and unwanted side reactions are minimized. It can easily be scaled up to produce large-area thin film electronics. Conventionally, plasma enhanced chemical vapour deposition (PECVD) is used to deposit semiconductors and inorganic dielectrics. Recently, HWCVD has been explored for fast deposition of such materials. An adaptation of HWCVD, initiated chemical vapour deposition (iCVD), offers the unique possibility of producing organic materials and polymers in a vacuum reactor, without the use of solvents. This technique was originally proposed at the Massachusetts institute of technology (MIT) by Prof. Karen Gleason. The iCVD process involves the creation of radicals by dissociation of a peroxide (a molecule with a ~O-O~ bond) by a heated wire in a vacuum reactor. This radical initiates a polymerization reaction of a vinyl (a molecule with a double carbon-carbon bond, ~C=C~) monomer at a substrate held at room temperature. This thesis describes a dedicated iCVD reactor for polymer deposition, installed at Utrecht University, along with a reactor with a cooled substrate holder in an existing HWCVD multi-chamber setup for low-temperature silicon nitride (SiNx) depositions. The most important features of these reactors are described and the characterization techniques are explained. This thesis contains four new

  9. Comparison of laser-ablation and hot-wall chemical vapour deposition techniques for nanowire fabrication

    NASA Astrophysics Data System (ADS)

    Stern, E.; Cheng, G.; Guthrie, S.; Turner-Evans, D.; Broomfield, E.; Lei, B.; Li, C.; Zhang, D.; Zhou, C.; Reed, M. A.

    2006-06-01

    A comparison of the transport properties of populations of single-crystal, In2O3 nanowires (NWs) grown by unassisted hot-wall chemical vapour deposition (CVD) versus NWs grown by laser-ablation-assisted chemical vapour deposition (LA-CVD) is presented. For nominally identical growth conditions across the two systems, NWs fabricated at 850 °C with laser-ablation had significantly higher average mobilities at the 99.9% confidence level, 53.3 ± 5.8 cm2 V-1 s-1 versus 10.2 ± 1.9 cm2 V-1 s-1. It is also observed that increasing growth temperature decreases mobility for LA-CVD NWs. Transmission electron microscopy studies of CVD-fabricated samples indicate the presence of an amorphous In2O3 region surrounding the single-crystal core. Further, low-temperature measurements verify the presence of ionized impurity scattering in low-mobility CVD-grown NWs.

  10. Ferromagnetic resonance of patterned chromium dioxide thin films grown by selective area chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Durrant, C. J.; Jokubaitis, M.; Yu, W.; Mohamad, H.; Shelford, L. R.; Keatley, P. S.; Xiao, Gang; Hicken, R. J.

    2015-05-01

    A selective area chemical vapour deposition technique has been used to fabricate continuous and patterned epitaxial CrO2 thin films on (100)-oriented TiO2 substrates. Precessional magnetization dynamics were stimulated both electrically and optically, and probed by means of time-resolved Kerr microscopy and vector network analyser ferromagnetic resonance techniques. The dependence of the precession frequency and the effective damping parameter upon the static applied magnetic field were investigated. All films exhibited a large in-plane uniaxial anisotropy. The effective damping parameter was found to exhibit strong field dependence in the vicinity of the hard axis saturation field. However, continuous and patterned films were found to possess generally similar dynamic properties, confirming the suitability of the deposition technique for fabrication of future spintronic devices.

  11. Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Ma, Peng; Jin, Zhi; Guo, Jian-Nan; Pan, Hong-Liang; Liu, Xin-Yu; Ye, Tian-Chun; Wang, Hong; Wang, Guan-Zhong

    2012-05-01

    We report the dc and rf performance of graphene rf field-effect transistors, where the graphene films are grown on copper by using the chemical vapour deposition (CVD) method and transferred to SiO2/Si substrates. Composite materials, benzocyclobutene and atomic layer deposition Al2O3 are used as the gate dielectrics. The observation of n- and p-type transitions verifies the ambipolar characteristics in the graphene layers. While the intrinsic carrier mobility of CVD graphene is extracted to be 1200 cm2/V·s, the parasitic series resistances are demonstrated to have a serious impact on device performance. With a gate length of 1 μm and an extrinsic transconductance of 72 mS/mm, a cutoff frequency of 6.6 GHz and a maximum oscillation frequency of 8.8 GHz are measured for the transistors, illustrating the potential of the CVD graphene for rf applications.

  12. Elaboration of Bi 2Se 3 by metalorganic chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Giani, A.; Al Bayaz, A.; Foucaran, A.; Pascal-Delannoy, F.; Boyer, A.

    2002-03-01

    For the first time, Bi 2Se 3 thin films were elaborated by metalorganic chemical vapour deposition (MOCVD) using trimethylbismuth (TMBi) and diethylselenium (DESe) as metalorganic sources. The MOCVD elaboration of Bi 2Se 3 was carried out in a horizontal reactor for a substrate temperature ( Tg) varying from 450°C to 500°C, a total hydrogen flow rate DT=3 l min -1, RVI/V ratio >14 and TMBi partial pressure lower than 1.10 -4 atm. By X-ray diffraction and SEM observation, we noticed the polycrystalline structure of the layers typical preferential c-orientation and confirm the hexagonal structure. The microprobe data indicate that the best stoichiometry of Bi 2Se 3 was achieved. These films always displayed n-type conduction, and the maximum value of thermoelectric power α was found to be close to -120 μV/K.

  13. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration.

    PubMed

    Chang, Sung-Jin; Hyun, Moon Seop; Myung, Sung; Kang, Min-A; Yoo, Jung Ho; Lee, Kyoung G; Choi, Bong Gill; Cho, Youngji; Lee, Gaehang; Park, Tae Jung

    2016-01-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties. PMID:26961409

  14. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    PubMed Central

    Chang, Sung-Jin; Hyun, Moon Seop; Myung, Sung; Kang, Min-A; Yoo, Jung Ho; Lee, Kyoung G.; Choi, Bong Gill; Cho, Youngji; Lee, Gaehang; Park, Tae Jung

    2016-01-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties. PMID:26961409

  15. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    NASA Astrophysics Data System (ADS)

    Chang, Sung-Jin; Hyun, Moon Seop; Myung, Sung; Kang, Min-A.; Yoo, Jung Ho; Lee, Kyoung G.; Choi, Bong Gill; Cho, Youngji; Lee, Gaehang; Park, Tae Jung

    2016-03-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties.

  16. Synthesis of Tin Nitride Sn x N y Nanowires by Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Zervos, Matthew; Othonos, Andreas

    2009-09-01

    Tin nitride (Sn x N y ) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH4Cl at 450 °C under a steady flow of NH3. The Sn x N y nanowires have an average diameter of 200 nm and lengths ≥5 μm and were grown on Si(111) coated with a few nm’s of Au. Nitridation of Sn alone, under a flow of NH3 is not effective and leads to the deposition of Sn droplets on the Au/Si(111) surface which impedes one-dimensional growth over a wide temperature range i.e. 300-800 °C. This was overcome by the addition of ammonium chloride (NH4Cl) which undergoes sublimation at 338 °C thereby releasing NH3 and HCl which act as dispersants thereby enhancing the vapour pressure of Sn and the one-dimensional growth of Sn x N y nanowires. In addition to the action of dispersion, Sn reacts with HCl giving SnCl2 which in turn reacts with NH3 leading to the formation of Sn x N y NWs. A first estimate of the band-gap of the Sn x N y nanowires grown on Si(111) was obtained from optical reflection measurements and found to be ≈2.6 eV. Finally, intricate assemblies of nanowires were also obtained at lower growth temperatures.

  17. Interface study between nanostructured tantalum nitride films and carbon nanotubes grown by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Bouchet-Fabre, B.; Pinault, M.; Foy, E.; Hugon, M. C.; Minéa, T.; Mayne-L'Hermite, M.

    2014-10-01

    We present the role of nitrogen content in tantalum nitride ultra-thin buffers, on the carbon nanotubes (CNTs) growth by chemical vapour deposition at 850 °C, assisted by ferrocene as catalyst source. Tantalum nitride (TaNx) films with a very large range of concentration x = [0, 1.8] and various nanostructures, from amorphous Ta(N) to Ta3N5, were deposited by Highly Pulsed Plasma Magnetron Sputtering. The buffer films are characterized after heat treatment at 850 °C, and after the CNT growth, by wide angle X-ray scattering in grazing incidence and scanning electron microscopy. The CNT diameter explored by transition electron microscopy shows an all-out value for under stoichiometric thin films (Ta1-N1-δ, Ta3-N5-δ) and a minimum value just above the stoichiometric phases (Ta1-N1+δ, Ta3-N5+δ). Firstly one shows that the buffer films under the heat treatment present surface modification highly dependent on their initial state, which influences the catalyst particles diffusion. Secondly at the stoichiometric TaN phase we show that a specific ternary phase FeTa2O6 is formed at the interface CNT/buffer, not present in the other cases, leading to a special CNT growth condition.

  18. The augmented saddle field discharge characteristics and its applications for plasma enhanced chemical vapour deposition

    SciTech Connect

    Wong, Johnson; Yeghikyan, Davit; Kherani, Nazir P.

    2013-04-07

    A high ion flux parallel electrode plasma is proposed and studied in its DC configuration. By cascading a diode source region which supplies electrons and a saddle field region where these seed electrons are energized and amplified, the energy of ion bombardment on the substrate can be decoupled from the plasma density. The sufficiently large density of electrons and holes in the vicinity of the substrate raises the possibility to perform plasma enhanced chemical vapour deposition on insulating materials, at low sheath voltages (around 40 V in the configuration studied), at low temperatures in which the surface mobility of film growth species may be provided by the bombardment of moderate energy ions. As a benchmarking exercise, experiments are carried out on silane discharge characteristics and deposition of hydrogenated amorphous silicon (a-Si:H) on both silicon wafer and glass. The films grown at low anode voltages have excellent microstructures with predominantly monohydride bonds, sharp band tails, but relatively high integrated defect density in the mid 10{sup 16}/cm{sup 3} range for the particular substrate temperature of 180 Degree-Sign C, indicating that further optimizations are necessary if the electrode configuration is to be used to create a-Si:H devices.

  19. Alumina coating on dense tungsten powder by fluidized bed metal organic chemical vapour deposition.

    PubMed

    Rodriguez, Philippe; Caussat, Brigitte; Ablitzer, Carine; Iltis, Xavière; Brothier, Meryl

    2011-09-01

    In order to study the feasibility of coating very dense powders by alumina using Fluidized Bed Metal Organic Chemical Vapour Deposition (FB-MOCVD), experiments were performed on a commercial tungsten powder, 75 microm in median volume diameter and 19,300 kg/m3 in grain density. The first part of the work was dedicated to the experimental study of the tungsten powder fluidization using argon as carrier gas at room temperature and at 400 degrees C. Due to the very high density of the tungsten powder, leading to low initial fixed bed heights and low bed expansions, different weights of powder were tested in order to reach satisfactory temperature profiles along the fluidized bed. Then, using argon as a fluidized bed former and aluminium acetylacetonate Al(C5O2H7)3 as a single source precursor, alumina thin films were deposited on tungsten particles at a low temperature range (e.g., 370-420 degrees C) by FB-MOCVD. The influence of the weight of powder, bed temperature and run duration was studied. Characterizations of the obtained samples were performed by various techniques including scanning electron microscopy (SEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS) analyses, Field Emission Gun SEM (FEG-SEM) and Fourier Transform InfraRed (FT-IR) spectroscopy. The different analyses indicated that tungsten particles were uniformly coated by a continuous alumina thin film. The thickness of the film ranged between 25 and 80 nm, depending on the coating conditions. The alumina thin films were amorphous and contained carbon contamination. This latter may correspond to the adsorption of species resulting from incomplete decomposition of the precursor at so low deposition temperature. PMID:22097534

  20. Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Yu, Qingkai; Jauregui, Luis A.; Wu, Wei; Colby, Robert; Tian, Jifa; Su, Zhihua; Cao, Helin; Liu, Zhihong; Pandey, Deepak; Wei, Dongguang; Chung, Ting Fung; Peng, Peng; Guisinger, Nathan P.; Stach, Eric A.; Bao, Jiming; Pei, Shin-Shem; Chen, Yong P.

    2011-06-01

    The strong interest in graphene has motivated the scalable production of high-quality graphene and graphene devices. As the large-scale graphene films synthesized so far are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient chemical vapour deposition on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene’s electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can cross Cu grain boundaries. The edges of these grains are found to be predominantly parallel to zigzag directions. We show that grain boundaries give a significant Raman ‘D’ peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene. Finally, we demonstrate an approach using pre-patterned growth seeds to control graphene nucleation, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries.

  1. Chemical Vapour Deposition of Graphene with Re-useable Pt and Cu substrates for Flexible Electronics

    NASA Astrophysics Data System (ADS)

    Karamat, Shumaila; Sonusen, Selda; Celik, Umit; Uysalli, Yigit; Oral, Ahmet

    2015-03-01

    Graphene has gained the attention of scientific world due to its outstanding physical properties. The future demand of flexible electronics such as solar cells, light emitting diodes, photo-detectors and touch screen technology requires more exploration of graphene properties on flexible substrates. The most interesting application of graphene is in organic light emitting diodes (OLED) where efforts are in progress to replace brittle indium tin oxide (ITO) electrode with a flexible graphene electrode because ITO raw materials are becoming increasingly expensive, and its brittle nature makes it unsuitable for flexible devices. In this work, we grow graphene on Pt and Cu substrates using chemical vapour deposition (CVD) and transferred it to a polymer material (PVA) using lamination technique. We used hydrogen bubbling method for separating graphene from Pt and Cu catalyst to reuse the substrates many times. After successful transfer of graphene on polymer samples, we checked the resistivity values of the graphene sheet which varies with growth conditions. Furthermore, Raman, atomic force microscopy (AFM), I-V and Force-displacement measurements will be presented for these samples.

  2. Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

    PubMed Central

    Lafont, F.; Ribeiro-Palau, R.; Kazazis, D.; Michon, A.; Couturaud, O.; Consejo, C.; Chassagne, T.; Zielinski, M.; Portail, M.; Jouault, B.; Schopfer, F.; Poirier, W.

    2015-01-01

    Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10−9 in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices. PMID:25891533

  3. The Role of Plasma in Plasma Enhanced Chemical Vapour Deposition of Nanostructure Growth

    NASA Technical Reports Server (NTRS)

    Hash, David B.; Meyyappan, M.; Teo, Kenneth B. K.; Lacerda, Rodrigo G.; Rupesinghe, Nalin L.

    2004-01-01

    Chemical vapour deposition (CVD) has become the preferred process for high yield growth of carbon nanotubes and nanofibres because of its ability to pattern growth through lithographic positioning of transition metal catalysts on substrates. Many potential applications of nanotubes such as field emitters [1] require not only patterned growth but also vertical alignment. Some degree of ali,ment in thermal CVD processes can be obtained when carbon nanotubes are grown closely together as a result of van der Waals interactions. The ali,onment however is marginal, and the van der Waals prerequisite makes growth of freestanding nanofibres with thermal CVD unrealizable. The application of electric fields as a means of ali,onment has been shown to overcome this limitation [2-5], and highly aligned nanostructures can be grown if electric fields on the order of 0.5 V/microns are employed. Plasma enhanced CVD in various configurations including dc, rf, microwave, inductive and electron cyclotron resonance has been pursued as a means of enabling alignment in the CVD process. However, the sheath fields for the non-dc sources are in general not sufficient for a high degree of ali,pment and an additional dc bias is usually applied to the growth substrate. This begs the question as to the actual role of the plasma. It is clear that the plasma itself is not required for aligned growth as references [3] and [4] employed fields through small applied voltages (3-20 V) across very small electrode spacings (10-100 microns) and thus avoided striking a discharge.

  4. Temporal Stability of Metal-Chloride-Doped Chemical-Vapour-Deposited Graphene.

    PubMed

    Kang, Moon H; Milne, William I; Cole, Matthew T

    2016-08-18

    Graphene has proven to be a promising material for transparent flexible electronics. In this study, we report the development of a transfer and doping scheme of large-area chemical vapour deposited (CVD) graphene. A technique to transfer the as-grown material onto mechanically flexible and optically transparent polymeric substrates using an ultraviolet adhesive (UVA) is outlined, along with the temporal stability of the sheet resistance and optical transparency following chemical doping with various metal chlorides (Mx Cly The sheet resistance (RS ) and 550 nm optical transparency (%T550 ) of the transferred un-doped graphene was 3.5 kΩ sq(-1) (±0.2 kΩ sq(-1) ) and 84.1 % (±2.9 %), respectively. Doping with AuCl3 showed a notable reduction in RS by some 71.4 % (to 0.93 kΩ sq(-1) ) with a corresponding %T550 of 77.0 %. After 200 h exposure to air at standard temperature and pressure, the increase in RS was found to be negligible (ΔRS AuCl3 =0.06 kΩ sq(-1) ), indicating that, of the considered Mx Cly species, AuCl3 doping offered the highest degree of time stability under ambient conditions. There appears a tendency of increasing RS with time for the remaining metal chlorides studied. We attribute the observed temporal shift to desorption of molecular dopants. We find that desorption was most significant in RhCl3 -doped samples whereas, in contrast, after 200 h in ambient conditions, AuCl3 -doped graphene showed only marginal desorption. The results of this study demonstrate that chemical doping of UVA-transferred graphene is a promising means for enhancing large-area CVD graphene in order to realise a viable platform for next-generation optically transparent and mechanically flexible electronics. PMID:27165783

  5. Chemical vapour deposition enhanced by atmospheric microwave plasmas: a large-scale industrial process or the next nanomanufacturing tool?

    NASA Astrophysics Data System (ADS)

    Belmonte, T.; Gries, T.; Cardoso, R. P.; Arnoult, G.; Kosior, F.; Henrion, G.

    2011-04-01

    This paper describes several specific aspects of atmospheric plasma deposition carried out with a microwave resonant cavity. Deposition over a wide substrate is first studied. We show that high deposition rates (several hundreds of μm h-1) are due to localization of fluxes on the substrate by convection when slightly turbulent flows are used. Next, we describe possible routes to localize deposition over a nanometre-sized area. Scaling down atmospheric plasma deposition is possible and two strategies to reach nanometre scales are described. Finally, we study self-organization of SiO2 nanodots deposited by chemical vapour deposition at atmospheric pressure enhanced by an Ar-O2 micro-afterglow operating at high temperature (>1200 K). When the film being deposited is thin enough (~500 nm) nanodots are obtained and they can be assembled into threads to create patterned surfaces. When the coating becomes thicker (~1 µm), and for relatively high content in HMDSO, SiO2 walls forming hexagonal cells are obtained.

  6. In situ growth rate measurements during plasma-enhanced chemical vapour deposition of vertically aligned multiwall carbon nanotube films

    NASA Astrophysics Data System (ADS)

    Jönsson, M.; Nerushev, O. A.; Campbell, E. E. B.

    2007-08-01

    In situ laser reflectivity measurements are used to monitor the growth of multiwalled carbon nanotube (MWCNT) films grown by DC plasma-enhanced chemical vapour deposition (PECVD) from an iron catalyst film deposited on a silicon wafer. In contrast to thermal CVD growth, there is no initial increase in the growth rate; instead, the initial growth rate is high (as much as 10 µm min-1) and then drops off rapidly to reach a steady level (2 µm min-1) for times beyond 1 min. We show that a limiting factor for growing thick films of multiwalled nanotubes (MWNTs) using PECVD can be the formation of an amorphous carbon layer at the top of the growing nanotubes. In situ reflectivity measurements provide a convenient technique for detecting the onset of the growth of this layer.

  7. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene.

    PubMed

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-01-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication. PMID:27381715

  8. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

    NASA Astrophysics Data System (ADS)

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-07-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication.

  9. Properties of MgB2 films grown at various temperatures by hybrid physical chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Chen, Ke; Veldhorst, Menno; Lee, Che-Hui; Lamborn, Daniel R.; DeFrain, Raymond; Redwing, Joan M.; Li, Qi; Xi, X. X.

    2008-09-01

    A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB2 thin films and thick films at various temperatures. We are able to grow superconducting MgB2 thin films at temperatures as low as 350 °C with a Tc0 of 35.5 K. MgB2 films up to 4 µm in thickness grown at 550 °C have Jc over 106 A cm-2 at 5 K and zero applied field. The low deposition temperature of MgB2 films is desirable for all-MgB2 tunnel junctions and MgB2 thick films are important for applications in coated conductors.

  10. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

    PubMed Central

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-01-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication. PMID:27381715

  11. Mosaic Structure Evolution in GaN Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Chen, Zhi-Tao; Xu, Ke; Guo, Li-Ping; Yang, Zhi-Jian; Pan, Yao-Bo; Su, Yue-Yong; Zhang, Han; Shen, Bo; Zhang, Guo-Yi

    2006-05-01

    We investigate mosaic structure evolution of GaN films annealed for a long time at 800°C grown on sapphire substrates by metalorganic chemical vapour deposition by high-resolution x-ray diffraction. The result show that residual stress in GaN films is relaxed by generating edge-type threading dislocations (TDs) instead of screw-type TDs. Compared to as-grown GaN films, the annealed ones have larger mean twist angles corresponding to higher density of edge-type TDs but smaller mean tilt angles corresponding to lower density of screw-type TDs films. Due to the increased edge-type TD density, the lateral coherence lengths of the annealed GaN films also decrease. The results obtained from chemical etching experiment and grazing-incidence x-ray diffraction (GIXRD) also support the proposed structure evolution.

  12. Aerosol assisted chemical vapour deposition of gas sensitive SnO2 and Au-functionalised SnO2 nanorods via a non-catalysed vapour solid (VS) mechanism

    PubMed Central

    Vallejos, Stella; Selina, Soultana; Annanouch, Fatima Ezahra; Gràcia, Isabel; Llobet, Eduard; Blackman, Chris

    2016-01-01

    Tin oxide nanorods (NRs) are vapour synthesised at relatively lower temperatures than previously reported and without the need for substrate pre-treatment, via a vapour-solid mechanism enabled using an aerosol-assisted chemical vapour deposition method. Results demonstrate that the growth of SnO2 NRs is promoted by a compression of the nucleation rate parallel to the substrate and a decrease of the energy barrier for growth perpendicular to the substrate, which are controlled via the deposition conditions. This method provides both single-step formation of the SnO2 NRs and their integration with silicon micromachined platforms, but also allows for in-situ functionalization of the NRs with gold nanoparticles via co-deposition with a gold precursor. The functional properties are demonstrated for gas sensing, with microsensors using functionalised NRs demonstrating enhanced sensing properties towards H2 compared to those based on non-functionalised NRs. PMID:27334232

  13. Aerosol assisted chemical vapour deposition of gas sensitive SnO2 and Au-functionalised SnO2 nanorods via a non-catalysed vapour solid (VS) mechanism

    NASA Astrophysics Data System (ADS)

    Vallejos, Stella; Selina, Soultana; Annanouch, Fatima Ezahra; Gràcia, Isabel; Llobet, Eduard; Blackman, Chris

    2016-06-01

    Tin oxide nanorods (NRs) are vapour synthesised at relatively lower temperatures than previously reported and without the need for substrate pre-treatment, via a vapour-solid mechanism enabled using an aerosol-assisted chemical vapour deposition method. Results demonstrate that the growth of SnO2 NRs is promoted by a compression of the nucleation rate parallel to the substrate and a decrease of the energy barrier for growth perpendicular to the substrate, which are controlled via the deposition conditions. This method provides both single-step formation of the SnO2 NRs and their integration with silicon micromachined platforms, but also allows for in-situ functionalization of the NRs with gold nanoparticles via co-deposition with a gold precursor. The functional properties are demonstrated for gas sensing, with microsensors using functionalised NRs demonstrating enhanced sensing properties towards H2 compared to those based on non-functionalised NRs.

  14. Aerosol assisted chemical vapour deposition of gas sensitive SnO2 and Au-functionalised SnO2 nanorods via a non-catalysed vapour solid (VS) mechanism.

    PubMed

    Vallejos, Stella; Selina, Soultana; Annanouch, Fatima Ezahra; Gràcia, Isabel; Llobet, Eduard; Blackman, Chris

    2016-01-01

    Tin oxide nanorods (NRs) are vapour synthesised at relatively lower temperatures than previously reported and without the need for substrate pre-treatment, via a vapour-solid mechanism enabled using an aerosol-assisted chemical vapour deposition method. Results demonstrate that the growth of SnO2 NRs is promoted by a compression of the nucleation rate parallel to the substrate and a decrease of the energy barrier for growth perpendicular to the substrate, which are controlled via the deposition conditions. This method provides both single-step formation of the SnO2 NRs and their integration with silicon micromachined platforms, but also allows for in-situ functionalization of the NRs with gold nanoparticles via co-deposition with a gold precursor. The functional properties are demonstrated for gas sensing, with microsensors using functionalised NRs demonstrating enhanced sensing properties towards H2 compared to those based on non-functionalised NRs. PMID:27334232

  15. Growth of carbon nanotubes (CNTs) on metallic underlayers by diffusion plasma-enhanced chemical vapour deposition (DPECVD)

    NASA Astrophysics Data System (ADS)

    Kim, S. M.; Gangloff, L.

    2009-10-01

    Here, we demonstrate the low-temperature (480-612 °C) synthesis of carbon nanotubes (CNTs) on different metallic underlayers (i.e., NiV, Ir, Ag, Pt, W, and Ta) using diffusion (dc) plasma-enhanced (~20 W, -600 V) chemical vapour deposition (DPECVD). The catalyst used is bi-layered Fe/Al and the feedstock used is a mixture of C 2H 2 and NH 3 (1:4). The crucial component is the diffusion of radical ions and hydrogen generated such as H 2/H +/H 2+/NH 3+/CH 2+/C 2H 2+ (which are confirmed by in-situ mass spectroscopy) from the nozzle, where it is inserted for most effective plasma diffusion between a substrate and a gas distributor.

  16. Formation of a Si Si3N4 nanocomposite from plasma enhanced chemical vapour deposition multilayer structures

    NASA Astrophysics Data System (ADS)

    Scardera, G.; Bellet-Amalric, E.; Bellet, D.; Puzzer, T.; Pink, E.; Conibeer, G.

    2008-07-01

    This work reports on the crystallization of α-Si3N4, β-Si3N4, and silicon in plasma enhanced chemical vapour deposition silicon nitride films grown with SiH4 and NH3 at 400C and annealed at 1150C. Nanometric multilayer structures, composed of alternating layers of silicon nitride and silicon-rich nitride, were used as the starting material. The final product is a thin-film Si-Si3N4 nanocomposite. The formation of this composite is verified using glancing incidence X-ray diffraction, transmission electron microscopy and Fourier transform infra-red spectroscopy. Annealing investigations indicate that the multilayer structure plays a key role in the formation of this composite and for the relatively low temperature formation of α- and β-Si3N4 nanocrystals.

  17. Laser-induced etching of few-layer graphene synthesized by Rapid-Chemical Vapour Deposition on Cu thin films.

    PubMed

    Piazzi, Marco; Croin, Luca; Vittone, Ettore; Amato, Giampiero

    2012-12-01

    The outstanding electrical and mechanical properties of graphene make it very attractive for several applications, Nanoelectronics above all. However a reproducible and non destructive way to produce high quality, large-scale area, single layer graphene sheets is still lacking. Chemical Vapour Deposition of graphene on Cu catalytic thin films represents a promising method to reach this goal, because of the low temperatures (T < 950°C-1000°C) involved during the process and of the theoretically expected monolayer self-limiting growth. On the contrary such self-limiting growth is not commonly observed in experiments, thus making the development of techniques allowing for a better control of graphene growth highly desirable. Here we report about the local ablation effect, arising in Raman analysis, due to the heat transfer induced by the laser incident beam onto the graphene sample. PMID:23503582

  18. Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges

    NASA Astrophysics Data System (ADS)

    Tallaire, Alexandre; Achard, Jocelyn; Silva, François; Brinza, Ovidiu; Gicquel, Alix

    2013-02-01

    Diamond is a material with outstanding properties making it particularly suited for high added-value applications such as optical windows, power electronics, radiation detection, quantum information, bio-sensing and many others. Tremendous progresses in its synthesis by microwave plasma assisted chemical vapour deposition have allowed obtaining single crystal optical-grade material with thicknesses of up to a few millimetres. However the requirements in terms of size, purity and crystalline quality are getting more and more difficult to achieve with respect to the forecasted applications, thus pushing the synthesis method to its scientific and technological limits. In this paper, after a short description of the operating principles of the growth technique, the challenges of increasing crystal dimensions both laterally and vertically, decreasing and controlling point and extended defects as well as modulating crystal conductivity by an efficient doping will be detailed before offering some insights into ways to overcome them.

  19. Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene.

    PubMed

    Dai, Boya; Fu, Lei; Zou, Zhiyu; Wang, Min; Xu, Haitao; Wang, Sheng; Liu, Zhongfan

    2011-01-01

    Controlled growth of high-quality graphene is still the bottleneck of practical applications. The widely used chemical vapour deposition process generally suffers from an uncontrollable carbon precipitation effect that leads to inhomogeneous growth and strong correlation to the growth conditions. Here we report the rational design of a binary metal alloy that effectively suppresses the carbon precipitation process and activates a self-limited growth mechanism for homogeneous monolayer graphene. As demonstrated by an Ni-Mo alloy, the designed binary alloy contains an active catalyst component for carbon source decomposition and graphene growth and a black hole counterpart for trapping the dissolved carbons and forming stable metal carbides. This type of process engineering has been used to grow strictly single-layer graphene with 100% surface coverage and excellent tolerance to variations in growth conditions. With simplicity, scalability and a very large growth window, the presented approach may facilitate graphene research and industrial applications. PMID:22045001

  20. Growth of ZnO Nanorods on Stainless Steel Wire Using Chemical Vapour Deposition and Their Photocatalytic Activity

    PubMed Central

    Abd Aziz, Siti Nor Qurratu Aini; Pung, Swee-Yong; Ramli, Nurul Najiah; Lockman, Zainovia

    2014-01-01

    The photodegradation efficiency of ZnO nanoparticles in removal of organic pollutants deteriorates over time as a high percentage of the nanoparticles can be drained away by water during the wastewater treatment. This problem can be solved by growing the ZnO nanorods on stainless steel wire. In this work, ZnO nanorods were successfully grown on stainless steel wire by chemical vapour deposition. The SAED analysis indicates that ZnO nanorod is a single crystal and is preferentially grown in [0001] direction. The deconvoluted O 1s peak at 531.5 eV in XPS analysis is associated with oxygen deficient, revealing that the ZnO nanorods contain many oxygen vacancies. This observation is further supported by the finding of the small Iuv/Ivis ratio, that is, ~1 in the photoluminescence analysis. The growth of ZnO nanorods on stainless steel wire was governed by vapour-solid mechanism as there were no Fe particles observed at the tips of the nanorods. The photodegradation of Rhodamine B solution by ZnO nanorods followed the first-order kinetics. PMID:24587716

  1. Growth of ZnO nanorods on stainless steel wire using chemical vapour deposition and their photocatalytic activity.

    PubMed

    Abd Aziz, Siti Nor Qurratu Aini; Pung, Swee-Yong; Ramli, Nurul Najiah; Lockman, Zainovia

    2014-01-01

    The photodegradation efficiency of ZnO nanoparticles in removal of organic pollutants deteriorates over time as a high percentage of the nanoparticles can be drained away by water during the wastewater treatment. This problem can be solved by growing the ZnO nanorods on stainless steel wire. In this work, ZnO nanorods were successfully grown on stainless steel wire by chemical vapour deposition. The SAED analysis indicates that ZnO nanorod is a single crystal and is preferentially grown in [0001] direction. The deconvoluted O 1s peak at 531.5 eV in XPS analysis is associated with oxygen deficient, revealing that the ZnO nanorods contain many oxygen vacancies. This observation is further supported by the finding of the small I(uv)/I(vis) ratio, that is, ~1 in the photoluminescence analysis. The growth of ZnO nanorods on stainless steel wire was governed by vapour-solid mechanism as there were no Fe particles observed at the tips of the nanorods. The photodegradation of Rhodamine B solution by ZnO nanorods followed the first-order kinetics. PMID:24587716

  2. Durability of silver nanoparticulate films within a silica matrix by flame assisted chemical vapour deposition for biocidal applications.

    PubMed

    Cook, Ian; Shee, David W; Foster, Howard A; Varghese, Sajnu

    2011-09-01

    Healthcare acquired infection (HCAI) rates have come under increasing scrutiny in recent years and been a major priority for health professionals in the UK and elsewhere. Of particular concern is the rise of so called 'superbugs', or those resistant to conventional antibiotics, such as Escherichia coli, Clostridium difficile and methicillin resistant Staphylococcus aureus (MRSA). The reasons for this rise are many and complex, but one important factor is bacterial survival rates on wards and other hospital areas. In this respect, nanostructured biocidal surfaces offer a potentially powerful weapon in the fight against HCAI. In addition to providing a toxic environment to a range of infectious disease-causing bacteria (while remaining harmless to human health), any potential bioactive coated surface is required to be durable enough to withstand regular hospital cleaning methods without a reduction in biocidal activity over time and be economically viable to mass produce. The flame assisted chemical vapour deposition (FACVD) of silver and silver/silica films offer a means of producing such surfaces. In this work, we report investigations into a wide range of experimental factors and parameters affecting film durability, including burner head design and relative water vapour content in the flame environment. The produced films were assessed in terms of durability (by scratch testing) and relative silver content using glow discharge optical emission spectroscopy (GDOES). PMID:22097580

  3. Titania Coated Mica via Chemical Vapour Deposition, Post N-doped by Liquid Ammonia Treatment

    NASA Astrophysics Data System (ADS)

    Powell, Michael J.; Parkin, Ivan P.

    TiO2 films were successfully grown on synthetic mica powders via Chemical Vapor Deposition (CVD). The CVD rig is a cold-walled design that allows surface coverage of a powder to be successfully achieved. The TiO2 was produced by the reaction between TiCl4 and Ethyl Acetate. The powder produced could be successfully N-doped using post liquid ammonia treatment. The TiO2 powder produced could have potential applications in self-cleaning surfaces or antimicrobial paints.

  4. Osteoconductive Potential of Barrier NanoSiO2 PLGA Membranes Functionalized by Plasma Enhanced Chemical Vapour Deposition

    PubMed Central

    Terriza, Antonia; Vilches-Pérez, Jose I.; de la Orden, Emilio; Yubero, Francisco; Gonzalez-Caballero, Juan L.; González-Elipe, Agustin R.; Vilches, José; Salido, Mercedes

    2014-01-01

    The possibility of tailoring membrane surfaces with osteoconductive potential, in particular in biodegradable devices, to create modified biomaterials that stimulate osteoblast response should make them more suitable for clinical use, hopefully enhancing bone regeneration. Bioactive inorganic materials, such as silica, have been suggested to improve the bioactivity of synthetic biopolymers. An in vitro study on HOB human osteoblasts was performed to assess biocompatibility and bioactivity of SiO2 functionalized poly(lactide-co-glycolide) (PLGA) membranes, prior to clinical use. A 15 nm SiO2 layer was deposited by plasma enhanced chemical vapour deposition (PECVD), onto a resorbable PLGA membrane. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and infrared spectroscopy (FT-IR). HOB cells were seeded on sterilized test surfaces where cell morphology, spreading, actin cytoskeletal organization, and focal adhesion expression were assessed. As proved by the FT-IR analysis of samples, the deposition by PECVD of the SiO2 onto the PLGA membrane did not alter the composition and other characteristics of the organic membrane. A temporal and spatial reorganization of cytoskeleton and focal adhesions and morphological changes in response to SiO2 nanolayer were identified in our model. The novedous SiO2 deposition method is compatible with the standard sterilization protocols and reveals as a valuable tool to increase bioactivity of resorbable PLGA membranes. PMID:24883304

  5. Plasma enhanced chemical vapour deposition of silica onto Ti: Analysis of surface chemistry, morphology and functional hydroxyl groups

    PubMed Central

    Szili, Endre J.; Kumar, Sunil; Smart, Roger St. C.; Lowe, Rachel; Saiz, Eduardo; Voelcker, Nicolas H.

    2009-01-01

    Previously, we have developed and characterised a procedure for the deposition of thin silica films by a plasma enhanced chemical vapour deposition (PECVD) procedure using tetraethoxysilane (TEOS) as the main precursor. We have used the silica coatings for improving the corrosion resistance of metals and for enhancing the bioactivity of biomedical metallic implants. Recently, we have been fine-tuning the PECVD method for producing high quality and reproducible PECVD-silica (PECVD-Si) coatings on metals, primarily for biomaterial applications. In order to understand the interaction of the PECVD-Si coatings with biological species (such as proteins and cells), it is important to first analyse the properties of the silica films deposited using the optimised parameters. Therefore, this current investigation was carried out to analyse the characteristic features of PECVD-Si deposited on Ti substrates (PECVD-Si-Ti). We determined that the PECVD-Si coatings on Ti were conformal to the substrate surface, strongly adhered to the underlying substrate and were resistant to delamination. The PECVD-Si surface was composed of stoichiometric SiO2, showed a low carbon content (below 10 at.%) and was very hydrophilic (contact angle <10°). Finally, we also showed that the PECVD-Si coatings contain functional hydroxyl groups. PMID:19809536

  6. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

    DOE PAGESBeta

    Liu, Zheng; Amani, Matin; Najmaei, Sina; Xu, Quan; Zou, Xiaolong; Zhou, Wu; Yu, Ting; Qiu, Caiyu; Birdwell, A. Glen; Crowne, Frank J.; et al

    2014-11-18

    Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced band gap engineering. We also evaluate the effective strain transferred from polymermore » substrates to MoS2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.« less

  7. Nanofabrication using home-made RF plasma coupled chemical vapour deposition system

    NASA Astrophysics Data System (ADS)

    Ong, Si Ci; Ilyas, Usman; Rawat, Rajdeep Singh

    2014-08-01

    Zinc oxide, ZnO, a popular semiconductor material with a wide band gap (3.37 eV) and high binding energy of the exciton (60 meV), has numerous applications such as in optoelectronics, chemical/biological sensors, and drug delivery. This project aims to (i) optimize the operating conditions for growth of ZnO nanostructures using the chemical vapor deposition (CVD) method, and (ii) investigate the effects of coupling radiofrequency (RF) plasma to the CVD method on the quality of ZnO nanostructures. First, ZnO nanowires were synthesized using a home-made reaction setup on gold-coated and non-coated Si (100) substrates at 950 °C. XRD, SEM, EDX, and PL measurements were used for characterizations and it was found that a deposition duration of 10 minutes produced the most well-defined ZnO nanowires. SEM analysis revealed that the nanowires had diameters ranging from 30-100 mm and lengths ranging from 1-4 µm. In addition, PL analysis showed strong UV emission at 380 nm, making it suitable for UV lasing. Next, RF plasma was introduced for 30 minutes. Both remote and in situ RF plasma produced less satisfactory ZnO nanostructures with poorer crystalline structure, surface morphology, and optical properties due to etching effect of energetic ions produced from plasma. However, a reduction in plasma discharge duration to 10 minutes produced thicker and shorter ZnO nanostructures. Based on experimentation conducted, it is insufficient to conclude that RF plasma cannot aid in producing well-defined ZnO nanostructures. It can be deduced that the etching effect of energetic ions outweighed the increased oxygen radical production in RF plasma nanofabrication.

  8. Plasma and ion beam enhanced chemical vapour deposition of diamond and diamond-like carbon

    NASA Astrophysics Data System (ADS)

    Tang, Yongji

    WC-Co cutting tools are widely used in the machining industry. The application of diamond coatings on the surfaces of the tools would prolong the cutting lifetime and improves the manufacturing efficiency. However, direct chemical vapor deposition (CVD) of diamond coatings on WC-Co suffer from severe premature adhesion failure due to interfacial graphitization induced by the binder phase Co. In this research, a combination of hydrochloric acid (HCl) and hydrogen (H2) plasma pretreatments and a novel double interlayer of carbide forming element (CFE)/Al were developed to enhance diamond nucleation and adhesion. The results showed that both the pretreatments and interlayers were effective in forming continuous and adhesive nanocrystalline diamond coatings. The method is a promising replacement of the hazardous Murakami's regent currently used in WC-Co pretreatment with a more environmental friendly approach. Apart from coatings, diamond can be fabricated into other forms of nanostructures, such as nanotips. In this work, it was demonstrated that oriented diamond nanotip arrays can be fabricated by ion beam etching of as-grown CVD diamond. The orientation of diamond nanotips can be controlled by adjusting the direction of incident ion beam. This method overcomes the limits of other techniques in producing nanotip arrays on large areas with controlled orientation. Oriented diamond nano-tip arrays have been used to produce anisotropic frictional surface, which is successfully used in ultra-precision positioning systems. Diamond-like carbon (DLC) has many properties comparable to diamond. In this thesis, the preparation of alpha-C:H thin films by end-Hall (EH) ion source and the effects of ion energy and nitrogen doping on the microstructure and mechanical properties of the as-deposited thin films were investigated. The results have demonstrated that smooth and uniform alpha-C:H and alpha-C:H:N films with large area and reasonably high hardness and Young's modulus can be

  9. Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline.

    PubMed

    Ji, Qingqing; Zhang, Yu; Zhang, Yanfeng; Liu, Zhongfan

    2015-05-01

    As structural analogues of graphene but with a sizeable band gap, monolayers of group-VIB transition metal dichalcogenides (MX2, M = Mo, W; X = S, Se, Te, etc.) have emerged as the ideal two dimensional prototype for exploring fundamental issues in physics such as valley polarization, and for engineering a wide range of nanoelectronic, optoelectronic and photocatalytic applications. Recently, chemical vapour deposition (CVD) was introduced as a more efficient preparation method than traditional chemical or physical exfoliation options, and has allowed for the successful synthesis of large-area MX2 monolayers possessing a large domain size, high thickness uniformity and continuity, and satisfactory crystal quality. This tutorial review therefore focuses on introducing the more recent advances in the CVD growth of MX2 (MoS2, WS2, MoS2(1-x)Se2xetc.) monolayers via the sulphurisation/decomposition of pre-deposited metal-based precursors, or the one-step reaction and deposition of gaseous metal and chalcogen feedstocks. Differences in growth behaviour caused by commonly used amorphous SiO2/Si, and newly adopted insulating single crystal substrates such as sapphire, mica and SrTiO3, are also comparatively presented. Also discussed are the essential parameters that influence the growth of MX2, such as the temperature, the source-substrate distance and the composition of the carrier gas (Ar/H2). Finally, an assessment is provided for viable future pathways for fine-tuning of the domain size and orientation, thickness uniformity, and the bandgap of MX2 and its alloys. PMID:25256261

  10. Chemical vapour deposition of undoped and spinel-doped cubic zirconia film using organometallic process

    NASA Astrophysics Data System (ADS)

    Takahashi, Yasutaka; Kawae, Takayuki; Nasu, Mineji

    1986-03-01

    Growth of undoped and spinel-doped ZrO 2 films on glass substrates by the vapour phase decomposition of zirconium t-butoxide (ZTB) was investigated. Undoped tetragonal and monoclinic ZrO 2 films were formed below and above 400°C, respectively. Cubic ZrO 2 films were grown when the ZrO 2 was doped with more than 5 mol% of spinel MgAl 2O 4. Magnesium aluminium isopropoxide MgAl 2 (O-i-Pr) 8 (MAI) was used as the dopant source of the spinel. The cubic films have a higher Vickers hardness than the monoclinic films by about 200-250 kg/mm 2, and are stable up to 800°C, above which they were transformed to the monoclinic phase. This is in contrast to the higher temperature stability of the spinel-doped zirconia powder with spinel content 6 mol% formed by hydrolysis of a isopropanol solution of mixed zirconium n-butoxide and MAI, where the tetragonal form of ZrO 2 was kept unchanged by annealing it up to about 1000°C. The difference is attributed to effect of surface energy control in the tetragonal powders which is absent in the cubic films produced by CVD.

  11. Chemical vapour deposition of amorphous Ru(P) thin films from Ru trialkylphosphite hydride complexes.

    PubMed

    McCarty, W Jeffrey; Yang, Xiaoping; DePue Anderson, Lauren J; Jones, Richard A

    2012-11-21

    The ruthenium phosphite hydride complexes H(2)Ru(P(OR)(3))(4) (R = Me (1), Et (2), (i)Pr (3)) were used as CVD precursors for the deposition of films of amorphous ruthenium-phosphorus alloys. The as-deposited films were X-ray amorphous and XPS analysis revealed that they were predominantly comprised of Ru and P in zero oxidation states. XPS analysis also showed the presence of small amounts of oxidized ruthenium and phosphorus. The composition of the films was found to depend on ligand chemistry as well as the deposition conditions. The use of H(2) as the carrier gas had the effect of increasing the relative concentrations of P and O for all films. Annealing films to 700 °C under vacuum produced films of polycrystalline hcp Ru while a flowing stream of H(2) resulted in polycrystalline hcp RuP. PMID:23018487

  12. Low-temperature synthesis and characterization of helical carbon fibers by one-step chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Jin, Yongzhong; Chen, Jian; Fu, Qingshan; Li, Binghong; Zhang, Huazhi; Gong, Yong

    2015-01-01

    Helical carbon fibers (HCNFs) were synthesized by one-step chemical vapour deposition using cupric tartrate as a catalyst at temperature below 500 °C. The bound rubber of natural rubber (NR)/HCNFs were also prepared in this study. The results of thermogravimetry-differential scanning calorimetry (TG/DSC) for cupric tartrate nanoparticles show that the transformation of C4H4CuO6 → Cu reaction occurs at ∼250-310 °C. The characterization of scanning electron microscopy (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD) and Raman spectrum for the synthesized products confirms that the synthesis of HCNFs is highly temperature-dependent. The straight fibers with the fiber diameter of 100-400 nm are obtained at 280 °C and HCNFs can be synthesized at higher temperature, with the coil diameter of 0.5-1 μm and fiber diameter of 100-200 nm at 380 °C, and the coil diameter of ∼100 nm and fiber diameter of ∼80 nm at 480 °C. The maximum of the bound-rubber content (37%) can be obtained with the addition of 100 wt.% HCNFs in NR, which indicates that the coiled configuration of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system.

  13. Structural and Compositional Study of Graphene grown on SrTiO3 by Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Karamat, Shumaila; Celik, Umit; Oral, Ahmet

    Graphene, a monolayer of sp2 bonded carbon atom, is considered as one of the most promising candidate materials for future electronics. The most critical step in graphene research is its transfer from the growth catalyst to the dielectric substrate, many unavoidable issues in the transfer process are: contamination from etchants, photoresist residues, wrinkles, and mechanical breakage. The direct growth of graphene on the substrates without using catalyst offer new opportunities in device fabrication without any transfer process. But till now, the field of direct graphene growth on dielectrics or insulating substrates is not mature like growth on metallic catalysts using CVD. We used chemical vapour deposition to grow graphene on SrTiO3 (110) substrates. The growth was carried out in presence of methane, argon and hydrogen. Raman Spectrum clearly showed the D and G peaks which were absent in bare substrate. XPS was used to get information about the presence of necessary elements, their bonding with STO substrates. AFM imaging clearly showed graphene island formation on substrates.

  14. Surface and Compositional Study of Graphene grown on Lithium Niobate (LiNbO3) substrates by Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Karamat, Shumaila; Celik, Umit; Oral, Ahmet

    The diversity required in the designing of electronic devices motivated the community to always attempt for new functional materials and device structures. Graphene is considered as one of the most promising candidate materials for future electronics and carbon based devices. It is very exciting to combine graphene with new dielectric materials which exhibit multifunctional properties. Lithium Niobate exhibits ferro-, pyro-, and piezoelectric properties with large electro-optic, acousto-optic, and photoelastic coefficients as well as strong photorefractive and photovoltaic effects which made it one of the most extensively studied materials over the last 50 years. We used ambient pressure chemical vapour deposition to grow graphene on LiNbO3 substrates without any catalyst. The growth was carried out in presence of methane, argon and hydrogen. AFM imaging showed very unique structures on the surface which contains triangular domains. X-ray photoelectron spectroscopy (XPS) was used to get information about the presence of necessary elements, their bonding with LiNbO3 substrates. Detailed characterization is under process which will be presented later.

  15. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    NASA Astrophysics Data System (ADS)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A.; Bisaro, R.; Servet, B.; Garry, G.; Barjon, J.

    2012-03-01

    In this study, 4 × 4 mm2 freestanding boron-doped diamond single crystals with thickness up to 260 μm have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 1018 to 1020 cm-3 which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 Ω cm have been obtained.

  16. Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Cleaver, William M.; Barron, Andrew R.; Power, Michael B.; Hepp, Aloysius F.

    1992-01-01

    The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

  17. Chemical vapour deposition of nitrogen-doped titanium dioxide thin films.

    PubMed

    Alexandrov, S E; Baryshnikova, M V; Filatov, L A; Shahmin, A L; Andreeva, V D

    2011-09-01

    Nitrogen-doped titanium dioxide is often considered as a promising nanomaterial for photocatalytic applications. Here we report the first results of a study of APCVD of N-doped TiO2 thin films prepared with the use of ammonia as a source of nitrogen and titanium tetraisopropoxide (TTIP) as a source of Ti and O atoms. The obtained films were analyzed with X-ray diffraction, infrared spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, UV-Vis spectroscopy, and ellipsometry. It was found that the film growth rate in the TTIP-NH3-Ar reaction system varied insignificantly with substrate temperature in the range of 450,..., 750 degrees C and did not exceed 4.4 nm/min. Yellow and orange layers with nitrogen content of about 7.6% were formed at the deposition temperature higher than 600 degrees C. The results of the structure analysis of the deposited films showed that addition of ammonia led to stabilization of the amorphous phase in the films. The effect of ammonia on optical and photocatalytic properties was also considered. PMID:22097568

  18. Optical visualization of individual ultralong carbon nanotubes by chemical vapour deposition of titanium dioxide nanoparticles.

    PubMed

    Zhang, Rufan; Zhang, Yingying; Zhang, Qiang; Xie, Huanhuan; Wang, Haidong; Nie, Jingqi; Wen, Qian; Wei, Fei

    2013-01-01

    Direct visualization and manipulation of individual carbon nanotubes in ambient conditions is of great significance for their characterizations and applications. However, the observation of individual carbon nanotubes usually requires electron microscopes under high vacuum. Optical microscopes are much more convenient to be used, yet their resolution is low. Here we realize the visualization and manipulation of individual ultralong carbon nanotubes under optical microscopes by deposition of TiO2 nanoparticles on them. The strong scattering of TiO2 nanoparticles to visible light renders them visible by optical microscopes. Micro-Raman-spectroscopy measurement of individual carbon nanotubes is greatly facilitated by their optical visualization. With the assistance of TiO2 nanoparticles, individual carbon nanotubes can be easily manipulated under an optical microscope at macroscopic scale and in ambient conditions. Based on our approach, various manipulation of ultralong carbon nanotubes, including cutting, transfer, fabrication of structures/devices and pulling out inner shells of multiwalled carbon nanotubes, are demonstrated. PMID:23591894

  19. Antimicrobial activity of novel nanostructured Cu-SiO2 coatings prepared by chemical vapour deposition against hospital related pathogens

    PubMed Central

    2013-01-01

    There is increasing recognition that the healthcare environment acts as an important reservoir for transmission of healthcare acquired infections (HCAI). One method of reducing environmental contamination would be use of antimicrobial materials. The antimicrobial activity of thin silica-copper films prepared by chemical vapour deposition was evaluated against standard strains of bacteria used for disinfectant testing and bacteria of current interest in HCAI. The structure of the coatings was determined using Scanning Electron Microscopy and their hardness and adhesion to the substrate determined. Antimicrobial activity was tested using a method based on BS ISO 22196:2007. The coatings had a pale green-brown colour and had a similar hardness to steel. SEM showed nano-structured aggregates of Cu within a silica matrix. A log10 reduction in viability of >5 could be obtained within 4 h for the disinfectant test strains and within 6 h for producing Acinetobacter baumannii, Klebsiella pneumoniae and Stenotrophomonas maltophilia. Activity against the other hospital isolates was slower but still gave log10 reduction factors of >5 for extended spectrum β-lactamase producing Escherichia coli and >3 for vancomycin resistant Enterococcus faecium, methicillin resistant Staphylococcus aureus and Pseudomonas aeruginosa within 24 h. The results demonstrate the importance of testing antimicrobial materials destined for healthcare use against isolates of current interest in hospitals as well as standard test strains. The coatings used here can also be applied to substrates such as metals and ceramics and have potential applications where reduction of microbial environmental contamination is desirable. PMID:24007899

  20. Antimicrobial activity of novel nanostructured Cu-SiO2 coatings prepared by chemical vapour deposition against hospital related pathogens.

    PubMed

    Varghese, Sajnu; Elfakhri, Souad O; Sheel, David W; Sheel, Paul; Bolton, Frederick J Eric; Foster, Howard A

    2013-01-01

    There is increasing recognition that the healthcare environment acts as an important reservoir for transmission of healthcare acquired infections (HCAI). One method of reducing environmental contamination would be use of antimicrobial materials. The antimicrobial activity of thin silica-copper films prepared by chemical vapour deposition was evaluated against standard strains of bacteria used for disinfectant testing and bacteria of current interest in HCAI. The structure of the coatings was determined using Scanning Electron Microscopy and their hardness and adhesion to the substrate determined. Antimicrobial activity was tested using a method based on BS ISO 22196:2007. The coatings had a pale green-brown colour and had a similar hardness to steel. SEM showed nano-structured aggregates of Cu within a silica matrix. A log10 reduction in viability of >5 could be obtained within 4 h for the disinfectant test strains and within 6 h for producing Acinetobacter baumannii, Klebsiella pneumoniae and Stenotrophomonas maltophilia. Activity against the other hospital isolates was slower but still gave log10 reduction factors of >5 for extended spectrum β-lactamase producing Escherichia coli and >3 for vancomycin resistant Enterococcus faecium, methicillin resistant Staphylococcus aureus and Pseudomonas aeruginosa within 24 h. The results demonstrate the importance of testing antimicrobial materials destined for healthcare use against isolates of current interest in hospitals as well as standard test strains. The coatings used here can also be applied to substrates such as metals and ceramics and have potential applications where reduction of microbial environmental contamination is desirable. PMID:24007899

  1. a Study of Volatile Precursors for the Growth of Cadmium Sulphide and Cadmium Selenide by Metal Organic Chemical Vapour Deposition.

    NASA Astrophysics Data System (ADS)

    Beer, Michael P.

    Available from UMI in association with The British Library. The wide-band-gap semiconductors, cadmium sulphide and cadmium selenide, may be grown by Metal Organic Chemical Vapour Deposition (MOCVD). This method typically involves the reaction of gaseous streams of Me_2 Cd and H_2Y (Y = S, Se) over a heated substrate (usually gallium arsenide) on which the desired compound is grown as an epitaxial layer. Unfortunately, the precursors start to react in the cold zone of the reactor, that is before they reach the heated substrate. This problem is known as prereaction. The problem of prereaction is partially reduced by the use of adducts of dimethyl cadmium in place of the free dialkyl compound although the mechanism by which such adducts block prereaction is unknown. Accordingly, a study of adducts of dimethyl cadmium was undertaken with a view to determining their properties in all phases. The adduct of Me_2Cd with 2,2^ '-bipyridyl was found to be monomeric in the solid state while that with 1,4-dioxane, a volatile compound used for prereaction reduction, was found to be polymeric. A study of adducts in the gas phase using mass spectrometry and gas phase Fourier transform infrared spectroscopy gave no evidence to suggest there is any gas phase association between 1,4-dioxane and dimethyl cadmium. With the 2,2 ^'-bipyridyl adduct some evidence for partial retention of coordinate bonds upon sublimation was obtained. The solid adduct of Me _2Cd with N,N,N^' ,N^'-tetramethylethylenediamine (TMEDA) was prepared as it was hoped that the flexibility of the aliphatic Lewis base would permit the formation of an adduct containing strong co-ordinate bonds which would remain intact upon sublimation. Using gas phase electron diffraction, the structure of the adduct of Me_2Cd and TMEDA was determined. It was shown to exist in the gas phase purely as the associated monomeric species. The adduct was then employed for the growth of CdS and CdSe in an industrial MOCVD apparatus. The

  2. Barrier properties to surrogates of hydrogenated carbon nano-films deposited on PET by plasma-enhanced chemical vapour deposition.

    PubMed

    Oliveira, Éder C; Echegoyen, Yolanda; Nerin, Cristina; Cruz, Sandra A

    2014-01-01

    Poly(ethylene terephthalate) resin was contaminated with a series of surrogates using a US Food and Drug Administration protocol. The contaminated samples were coated with two different kinds of hydrogenated amorphous carbon thin films (a-C:H): one with diamond-like hydrogenated amorphous carbon and another with polymer-like hydrogenated carbon (PLCH) phases. To evaluate the barrier properties of the a-C:H films, migration assays were performed using food simulants. After the tests, analysis by gas chromatography with different detectors was carried out. The appearance of the films before and after the migration experiments was studied by field emission scanning electron microscopy. The results showed that a-C:H films have good barrier properties for most of the evaluated compounds, mainly when they are deposited as PLCH phase. PMID:25254307

  3. Effect of boron incorporation on the lattice parameter and texture of diamond films deposited by chemical vapour deposition on silicon

    NASA Astrophysics Data System (ADS)

    Chateigner, D.; Brunet, F.; Deneuville, A.; Germi, P.; Pernet, M.; Gheeraert, E.; Gonon, P.

    1995-02-01

    Incorporation of boron in polycrystalline diamond films deposited on Si is shown to decrease or increase the lattice parameter below and above about 10 19 B cm -3, respectively. At lower values of doping, the lattice parameter is lower than that of the undoped films, while their <111> texture is maintained. At higher values, the lattice parameter increases rapidly above that of the undoped films, while the <111> texture is progressively lost until it becomes untextured at 6 × 10 20 B cm -3. A coherent interpretation of these results is proposed, based on a decrease and an increase of the defect concentration with B incorporation below and above 10 19 B cm -3, with the hypothesis that the defects increase the diamond lattice parameter.

  4. Surface engineering of artificial heart valve disks using nanostructured thin films deposited by chemical vapour deposition and sol-gel methods.

    PubMed

    Jackson, M J; Robinson, G M; Ali, N; Kousar, Y; Mei, S; Gracio, J; Taylor, H; Ahmed, W

    2006-01-01

    Pyrolytic carbon (PyC) is widely used in manufacturing commercial artificial heart valve disks (HVD). Although PyC is commonly used in HVD, it is not the best material for this application since its blood compatibility is not ideal for prolonged clinical use. As a result thrombosis often occurs and the patients are required to take anti-coagulation drugs on a regular basis in order to minimize the formation of thrombosis. However, anti-coagulation therapy gives rise to some detrimental side effects in patients. Therefore, it is extremely urgent that newer and more technically advanced materials with better surface and bulk properties are developed. In this paper, we report the mechanical properties of PyC-HVD, i.e. strength, wear resistance and coefficient of friction. The strength of the material was assessed using Brinell indentation tests. Furthermore, wear resistance and coefficient of friction values were obtained from pin-on-disk testing. The micro-structural properties of PyC were characterized using XRD, Raman spectroscopy and SEM analysis. Also in this paper we report the preparation of freestanding nanocrystalline diamond films (FSND) using the time-modulated chemical vapour deposition (TMCVD) process. Furthermore, the sol-gel technique was used to uniformly coat PyC-HVD with dense, nanocrystalline-titanium oxide (nc-TiO2) coatings. The as-grown nc-TiO2 coatings were characterized for microstructure using SEM and XRD analysis. PMID:16980288

  5. Rapid thermal low-pressure chemical vapour deposition of tungsten films onto InP using WF6 and H2

    NASA Astrophysics Data System (ADS)

    Katz, A.; Feingold, A.; El-Roy, A.; Pearton, S. J.; Lane, E.; Nakahara, S.; Geva, M.

    1992-11-01

    Tungsten (W) films were deposited onto InP in a cold wall, rapid thermal low-pressure chemical vapour deposition (RT-LPCVD) reactor, from a tungsten hexafluoride (WF6) gas reduced by hydrogen (H2). W films of thickness 50-450 nm were deposited in the temperature range 350-550 degrees C, pressure range 0.5-4.5 Torr at deposition rates up to 4 nm s-1 with an apparent activation energy of about 1.12 eV. The film stress varied depending upon the deposition pressure, from low compressive for deposition at 0.5 Torr to moderate tensile for deposition at about 4.5 Torr. The films were aged at temperatures as high as 300 degrees C for about 800 h and exhibited an excellent mechanical stability. Post-deposition sintering of the W films at temperatures up to 600 degrees C led to reduction of the resistivity with a minimum value of about 55 mu Omega cm as a result of heating at 500 degrees C. Conditions for both selective and blanket deposition were defined, and a dry etching process for further geometrical definitions of the films was developed, providing etch rates of 40-50 nm min-1. This report reflects the first attempt to deposit W films onto III-V semiconductor at a very high rate by means of RT-LPCVD.

  6. Thin films of tin(II) sulphide (SnS) by aerosol-assisted chemical vapour deposition (AACVD) using tin(II) dithiocarbamates as single-source precursors

    NASA Astrophysics Data System (ADS)

    Kevin, Punarja; Lewis, David J.; Raftery, James; Azad Malik, M.; O'Brien, Paul

    2015-04-01

    The synthesis of the asymmetric dithiocarbamates of tin(II) with the formula [Sn(S2CNRR')2] (where R=Et, R'=n-Bu (1); R=Me, R'=n-Bu (2); R=R'=Et (3)) and their use for the deposition of SnS thin films by aerosol-assisted chemical vapour deposition (AACVD) is described. The effects of temperature and the concentration of the precursors on deposition were investigated. The stoichiometry of SnS was best at higher concentrations of precursors (250 mM) and at 450 °C. The direct electronic band gap of the SnS produced by this method was estimated from optical absorbance measurements as 1.2 eV. The composition of films was confirmed by powder X-ray diffraction (p-XRD) and energy dispersive analysis of X-rays (EDAX) spectroscopy.

  7. Ellipsometric and Rutherford Back scattering Spectrometry studies of SiO(X)N(Y) films elaborated by plasma-enhanced chemical vapour deposition technique.

    PubMed

    Mahamdi, R; Boulesbaa, M; Saci, L; Mansour, F; Molliet, C; Collet, M; Temple-Boyer, P

    2011-10-01

    Silicon oxynitride (SiO(X)N(Y)) thin films were deposited by plasma-enhanced chemical vapour deposition technique (PECVD) from silane (SiH4), nitrous oxide (N2O), ammonia (NH3) and nitrogen (N2) mixture. Spectroscopic ellipsometry (SE), in the range of wavelengths 450-900 nm, was used to define the film thickness and therefore the deposition rate, as well as the refractive index as a function of the N2O gaseous flow. While considering the (Si3N4, SiO2, H2 or void) heterogeneous mixture, Maxwell Garnett (MG) theory allows to fit the SE measurements and to define the volume fraction of the different phases. Finally, Rutherford Backscattering Spectrometry (RBS) results showed that x = O/Si ratio increases gradually with increasing the N2O flow, allowing the correlation of the SiO(X)N(Y) films main parameters. PMID:22400311

  8. An investigation into the optimum thickness of titanium dioxide thin films synthesized by using atmospheric pressure chemical vapour deposition for use in photocatalytic water oxidation.

    PubMed

    Hyett, Geoffrey; Darr, Jawwad A; Mills, Andrew; Parkin, Ivan P

    2010-09-10

    Twenty eight films of titanium dioxide of varying thickness were synthesised by using atmospheric pressure chemical vapour deposition (CVD) of titanium(IV) chloride and ethyl acetate onto glass and titanium substrates. Fixed reaction conditions at a substrate temperature of 660 °C were used for all depositions, with varying deposition times of 5-60 seconds used to control the thickness of the samples. A sacrificial electron acceptor system composed of alkaline sodium persulfate was used to determine the rate at which these films could photo-oxidise water in the presence of 365 nm light. The results of this work showed that the optimum thickness for CVD films on titanium substrates for the purposes of water oxidation was ≈200 nm, and that a platinum coating on the reverse of such samples leads to a five-fold increase in the observed rate of water oxidation. PMID:20645333

  9. Formation of low pressure chemically vapour deposited W thin film on silicon dioxide for gate electrode application

    NASA Astrophysics Data System (ADS)

    Sone, Jae Hyun; Kim, Sun-Oo; Kim, Ki-Joon; Kim, Hyoung Sub; Kim, Hyeong Joon

    1994-12-01

    We have investigated the feasibility that low pressure chemically vapor deposited W can be used as a gate electrode material of metal-oxide-semiconductor (MOS) field effect transistors. We improved adhesion of the W film to SiO2 by using a pulsing injection of source gas. The pulsing injection of the reactant gas enhances the desorption of byproduct gases from the surface of the growing film and thus more W nuclei formed on SiO2. Tungsten thin films were deposited on the SiO2/Si with a deposition rate of 1000-2000 A/min. The deposition was carried out at various temperatures of 300-750 C and various SiH4:WF6 ratios of 0.6-1.5. The higher adhesion strength and resistivity of W thin films were achieved at the higher SiH4:WF6 ratio and higher deposition temperature. X-ray diffraction analysis showed that the crystal structure of all W films, deposited at various temperatures, was alpha-W in spite of either high reactant gas ratio or high temperature. Since W thin films had good adhesion to SiO2, MOS structure capacitors were fabricated with a W electrode via wet chemical processes and their electrical properties were also characterized. The extreme value distribution function of dielectric breakdown strength indicates that the thin SiO2 layer was significantly degraded by the diffused F ions. However, the stacked gate dielectric of SiO2 and Si3N4 layers instead of the single SiO2 layer was not degraded by the W gate electrode, since the Si3N4 layer protected SiO2 from chemical attack or restricted the F diffusion during deposition of the W gate electrode.

  10. Optimization of growth temperature of multi-walled carbon nanotubes fabricated by chemical vapour deposition and their application for arsenic removal

    NASA Astrophysics Data System (ADS)

    Mageswari, S.; Kalaiselvan, S.; Syed Shabudeen, P. S.; Sivakumar, N.; Karthikeyan, S.

    2014-12-01

    Multi-walled carbon nanotubes have been synthesized at different temperatures ranging from 550 °C to 750 °C on silica supported Fe-Mo catalyst by chemical vapour deposition technique using Cymbopogen flexuous oil under nitrogen atmosphere. The as-grown MWNTs were characterized by scanning electron microscope (SEM), high resolution transmission electron microscope (HRTEM), X-ray diffraction analysis (XRD) and Raman spectral studies. The HRTEM and Raman spectroscopic studies confirmed the evolution of MWNTs with the outer diameter between 20 and 40 nm. The possibility of using as-grown MWNTs as an adsorbent for removal of As (V) ions from drinking water was studied. Adsorption isotherm data were interpreted by the Langmuir and Freundlich equations. Kinetic data were studied using Elovich, pseudo-first order and pseudo-second order equations in order to elucidate the reaction mechanism.

  11. Fabrication of multiwalled carbon nanotubes in the channels of iron loaded three dimensional mesoporous material by catalytic chemical vapour deposition technique

    NASA Astrophysics Data System (ADS)

    Somanathan, T.; Gokulakrishnan, N.; Chandrasekar, G.; Pandurangan, A.

    2011-01-01

    The growth of multiwalled carbon nanotubes (MWNTs) was successfully achieved in the channels of three dimensional (3D) iron loaded mesoporous matrices (KIT-6) by employing catalytic chemical vapour deposition (CCVD) technique. The synthesised MWNTs, which were characterised by SEM, TEM and Raman spectroscopy, consist of thick graphene layers of about 10 nm composed of 29 graphene sheets with inner and outer diameter of ∼17 nm and ∼37 nm, respectively. The Raman spectrum showed the formation of well-graphitised MWNTs with significantly higher IG/ID ratio of 1.47 compared to commercial MWNTs. Comparatively, 2 wt% Fe loaded KIT-6 material produced a better yield of 91%, which is also highest compared with the report of MWNTs synthesis using mesoporous materials reported so far.

  12. Copper-Assisted Direct Growth of Vertical Graphene Nanosheets on Glass Substrates by Low-Temperature Plasma-Enhanced Chemical Vapour Deposition Process

    NASA Astrophysics Data System (ADS)

    Ma, Yifei; Jang, Haegyu; Kim, Sun Jung; Pang, Changhyun; Chae, Heeyeop

    2015-08-01

    Vertical graphene (VG) nanosheets are directly grown below 500 °C on glass substrates by a one-step copper-assisted plasma-enhanced chemical vapour deposition (PECVD) process. A piece of copper foil is located around a glass substrate as a catalyst in the process. The effect of the copper catalyst on the vertical graphene is evaluated in terms of film morphology, growth rate, carbon density in the plasma and film resistance. The growth rate of the vertical graphene is enhanced by a factor of 5.6 with the copper catalyst with denser vertical graphene. The analysis of optical emission spectra suggests that the carbon radical density is increased with the copper catalyst. Highly conductive VG films having 800 Ω/□ are grown on glass substrates with Cu catalyst at a relatively low temperature.

  13. Heterocyclic dithiocarbamato-iron(III) complexes: single-source precursors for aerosol-assisted chemical vapour deposition (AACVD) of iron sulfide thin films.

    PubMed

    Mlowe, Sixberth; Lewis, David J; Malik, Mohammad Azad; Raftery, James; Mubofu, Egid B; O'Brien, Paul; Revaprasadu, Neerish

    2016-02-14

    Tris-(piperidinedithiocarbamato)iron(III) (1) and tris-(tetrahydroquinolinedithiocarbamato)iron(iii) (2) complexes have been synthesized and their single-crystal X-ray structures were determined. Thermogravimetric analysis (TGA) of the complexes showed decomposition to iron sulfide. Both complexes were then used as single-source precursors for the deposition of iron sulfide thin films by aerosol-assisted chemical vapour deposition (AACVD). Energy-dispersive X-ray (EDX) spectroscopy confirmed the formation of iron sulfide films. The addition of tert-butyl thiol almost doubled the sulfur content in the deposited films. Scanning electron microscopy (SEM) images of the iron sulfide films from both complexes showed flakes/leaves/sheets, spherical granules and nanofibres. The sizes and shapes of these crystallites depended on the nature of the precursor, temperature, solvent and the amount of tert-butyl thiol used. The observed optical properties are dependent upon the variation of reaction parameters such as temperature and solvent. Powder X-ray diffraction (p-XRD) studies revealed that pyrrhotite, hexagonal (Fe0.975S), marcasite and smythite (Fe3S4) phases were differently deposited. PMID:26732865

  14. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

    SciTech Connect

    Liu, Zheng; Amani, Matin; Najmaei, Sina; Xu, Quan; Zou, Xiaolong; Zhou, Wu; Yu, Ting; Qiu, Caiyu; Birdwell, A. Glen; Crowne, Frank J.; Vajtai, Robert; Yakobson, Boris I.; Xia, Zhenhai; Dubey, Madan; Ajayan, Pulickel M.; Lou, Jun

    2014-11-18

    Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced band gap engineering. We also evaluate the effective strain transferred from polymer substrates to MoS2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.

  15. Substrate patterning with NiOx nanoparticles and hot-wire chemical vapour deposition of WO3x and carbon nanostructures

    NASA Astrophysics Data System (ADS)

    Houweling, Z. S.

    2011-10-01

    The first part of the thesis treats the formation of nickel catalyst nanoparticles. First, a patterning technique using colloids is employed to create ordered distributions of monodisperse nanoparticles. Second, nickel films are thermally dewetted, which produces mobile species that self-arrange in non-ordered distributions of polydisperse particles. Third, the mobility of the nickel species is successfully reduced by the addition of air during the dewetting and the use of a special anchoring layer. Thus, non-ordered distributions of self-arranged monodisperse nickel oxide nanoparticles (82±10 nm x 16±2 nm) are made. Studies on nickel thickness, dewetting time and dewetting temperature are conducted. With these particle templates, graphitic carbon nanotubes are synthesised using catalytic hot-wire chemical vapour deposition (HWCVD), demonstrating the high-temperature processability of the nanoparticles. The second part of this thesis treats the non-catalytic HWCVD of tungsten oxides (WO3-x). Resistively heated tungsten filaments exposed to an air flow at subatmospheric pressures, produce tungsten oxide vapour species, which are collected on substrates and are subsequently characterised. First, a complete study on the process conditions is conducted, whereby the effects of filament radiation, filament temperature, process gas pressure and substrate temperature, are investigated. The thus controlled growth of nanogranular smooth amorphous and crystalline WO3-x thin films is presented for the first time. Partially crystalline smooth hydrous WO3-x thin films consisting of 20 nm grains can be deposited at very high rates. The synthesis of ultrafine powders with particle sizes of about 7 nm and very high specific surface areas of 121.7±0.4 m2·g-1 at ultrahigh deposition rates of 36 µm·min-1, is presented. Using substrate heating to 600°C or more, while using air pressures of 3·10-5 mbar to 0.1 mbar, leads to pronounced crystal structures, from nanowires, to

  16. Growth of complex SiGe/Ge superlattices by reduced pressure chemical vapour deposition at low temperature

    NASA Astrophysics Data System (ADS)

    Halpin, John E.; Rhead, Stephen D.; Sanchez, Ana M.; Myronov, Maksym; Leadley, David R.

    2015-11-01

    In this work the growth of complex n-type, high Ge content superlattice structures by reduced pressure chemical vapor deposition is presented. The structures feature 50 repeats of a 14 layer period, which includes a main quantum well that is between 13 and 21 nm wide. The total epitaxy thickness is approximately 8 μm. Diffusion and segregation in the structures was minimized by using a low growth temperature. Materials characterization shows the structures to be of good crystalline quality, with the thickness of all layers close to the design, abrupt interfaces, and uniformity throughout the structures. High angle annular dark field scanning transmission electron microscopy is shown to be an ideal technique for measuring layer thickness and interface quality in these structures.

  17. Broadband antireflection for a high-index substrate using SiN x /SiO2 by inductively coupled plasma chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Lim, Kim Peng; Ng, Doris K. T.; Wang, Qian

    2016-03-01

    This paper presents the development of broadband antireflection coating for a high-index substrate such as Si using SiN x /SiO2 by inductively coupled plasma chemical vapour deposition (ICP-CVD). The thin-film design employs a simulated annealing method for a minimal average reflectance over the wavelength range and incidence angles involved, which gives the optimized refractive index and thickness of each layer of the thin-film stack under different layer numbers. Using ICP-CVD, the SiN x material system is optimized by tuning the SiH4/N2 gas ratio. The corresponding thin-film characterization shows the precise refractive index/film thickness control in deposition, and the deposited film also has a low absorption coefficient and smooth surface. The double-layer SiN x /SiO2 coating with the optimized refractive index and thickness for broadband antireflection is demonstrated experimentally. The average reflectance of the Si surface is reduced from ~32% to ~3.17% at normal incidence for a wavelength range from 400 to 1100 nm.

  18. Reactive Chemical Vapour Deposition of Titanium Carbide from H2-TiCl4 Gas Mixture on Pyrocarbon: A Comprehensive Study

    NASA Astrophysics Data System (ADS)

    Ledain, O.; Woelffel, W.; Roger, J.; Vignoles, G.; Maillé, L.; Jacques, S.

    In Reactive Chemical Vapour Deposition (RCVD), the absence of one element of the deposited carbide in the initial gas phase involves the consumption/conversion of the solid substrate. In this way, the growth of a continuous carbide layer on the substrate requires solid-phase diffusion of the reagent. In this work, a parametric study of the RCVD of titanium carbide from pyrocarbon (PyC) and an H2-TiCl4 mixture has been carried out. Conversion ratio, PyC consumption and carbide layer growth kinetics have been determined at 1000̊C. The influence of the H2/TiCl4 dilution ratio has been also investigated. The apparent inter-diffusion coefficient of the carbon through the TiC deposited layer and the direct apparent reaction rate were determined from a comparison between simulations based on a Deal-Grove-type model and the experimental results. The study has been completed with FTIR spectrometry analyses of the gases.

  19. Direct observation of electron emission from the grain boundaries of chemical vapour deposition diamond films by tunneling atomic force microscopy

    SciTech Connect

    Chatterjee, Vijay; Harniman, Robert; May, Paul W.; Barhai, P. K.

    2014-04-28

    The emission of electrons from diamond in vacuum occurs readily as a result of the negative electron affinity of the hydrogenated surface due to features with nanoscale dimensions, which can concentrate electric fields high enough to induce electron emission from them. Electrons can be emitted as a result of an applied electric field (field emission) with possible uses in displays or cold-cathode devices. Alternatively, electrons can be emitted simply by heating the diamond in vacuum to temperatures as low as 350 °C (thermionic emission), and this may find applications in solar energy generation or energy harvesting devices. Electron emission studies usually use doped polycrystalline diamond films deposited onto Si or metallic substrates by chemical vapor deposition, and these films have a rough, faceted morphology on the micron or nanometer scale. Electron emission is often improved by patterning the diamond surface into sharp points or needles, the idea being that the field lines concentrate at the points lowering the barrier for electron emission. However, there is little direct evidence that electrons are emitted from these sharp tips. The few reports in the literature that have studied the emission sites suggested that emission came from the grain boundaries and not the protruding regions. We now present direct observation of the emission sites over a large area of polycrystalline diamond using tunneling atomic force microscopy. We confirm that the emission current comes mostly from the grain boundaries, which is consistent with a model for emission in which the non-diamond phase is the source of electrons with a threshold that is determined by the surrounding hydrogenated diamond surface.

  20. Study of the catalyst evolution during annealing preceding the growth of carbon nanotubes by microwave plasma-enhanced chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Malesevic, Alexander; Chen, Hong; Hauffman, Tom; Vanhulsel, Annick; Terryn, Herman; Van Haesendonck, Chris

    2007-11-01

    A two-step catalyst annealing process is developed in order to control the diameter of nickel catalyst particles for the growth of carbon nanotubes (CNTs) by microwave plasma-enhanced chemical vapour deposition (MW PECVD). Thermal annealing of a continuous nickel film in a hydrogen (H2) environment in a first step is found to be insufficient for the formation of nanometre-size, high-density catalyst particles. In a second step, a H2 MW plasma treatment decreases the catalyst diameter by a factor of two and increases the particle density by a factor of five. An x-ray photoelectron spectroscopy study of the catalyst after each step in the annealing process is presented. It is found that the catalyst particles interact with the substrate during thermal annealing, thereby forming a silicate, even if a buffer layer in between the catalyst and the substrate is intended to prevent silicate formation. The silicate formation and reduction is shown to be directly related to the CNT growth mechanism, determining whether the catalyst particles reside at the base or the tip of the growing CNTs. The catalyst particles are used for the growth of a high-density CNT coating by MW PECVD. CNTs are analysed with electron microscopy and Raman spectroscopy.

  1. Fine-tuning of catalytic tin nanoparticles by the reverse micelle method for direct deposition of silicon nanowires by a plasma-enhanced chemical vapour technique.

    PubMed

    Poinern, Gérrard E J; Ng, Yan-Jing; Fawcett, Derek

    2010-12-15

    The reverse micelle method was used for the reduction of a tin (Sn) salt solution to produce metallic Sn nanoparticles ranging from 85 nm to 140 nm in diameter. The reverse micellar system used in this process was hexane-butanol-cetyl trimethylammonium bromide (CTAB). The diameters of the Sn nanoparticles were proportional to the concentration of the aqueous Sn salt solution. Thus, the size of the Sn nanoparticles can easily be controlled, enabling a simple, reproducible mechanism for the growth of silicon nanowires (SiNWs) using plasma-enhanced chemical vapour deposition (PECVD). Both the Sn nanoparticles and silicon nanowires were characterised using field-emission scanning electron microscopy (FE-SEM). Further characterisations of the SiNW's were made using transmission electron microscopy (TEM), atomic force microscopy (AFM) and Raman spectroscopy. In addition, dynamic light scattering (DLS) was used to investigate particle size distributions. This procedure demonstrates an economical route for manufacturing reproducible silicon nanowires using fine-tuned Sn nanoparticles for possible solar cell applications. PMID:20887996

  2. Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Li, Hai-Ou; Huang, Wei; Tang Chak, Wah; Deng, Xiao-Fang; Lau Kei, May

    2011-06-01

    The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility transistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω-mm. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.

  3. Impact of Mo and Ce on growth of single-walled carbon nanotubes by chemical vapour deposition using MgO-supported Fe catalysts

    NASA Astrophysics Data System (ADS)

    El-Hendawy, Abdel-Nasser A.; Andrews, Robert J.; Alexander, Andrew J.

    2009-05-01

    A series of nine catalysts containing Ce/Fe and Mo/Fe at various loadings on MgO supports have been studied as catalysts for chemical vapour deposition (CVD) of single-walled carbon nanotubes (SWCNTs) using a methane carbon source. Our results show that the Ce/Fe system is very suitable as a catalyst that favours SWCNT growth, and we question the special importance that has been attributed to Mo as an additive to Fe-based catalysts for SWCNT growth, as it appears that Ce is equally effective. Our results indicate that dehydroaromatization (DHA) is not a defining step for the growth mechanism, as has been suggested for Mo/Fe systems previously, and show that Ce and Mo do not seriously perturb the well-known Fe/MgO system for growth of high quality SWCNT. Using Raman spectroscopy, we have shown that the Ce/Fe/MgO catalyst system favours growth of SWCNTs with a different distribution of chiralities compared to the analogous Mo/Fe/MgO system.

  4. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    NASA Astrophysics Data System (ADS)

    Hu, Wen-Juan; Xie, Fen-Yan; Chen, Qiang; Weng, Jing

    2008-10-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.

  5. Effect of oxygen plasma on field emission characteristics of single-wall carbon nanotubes grown by plasma enhanced chemical vapour deposition system

    SciTech Connect

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad; Harsh; Husain, Mushahid

    2014-02-28

    Field emission properties of single wall carbon nanotubes (SWCNTs) grown on iron catalyst film by plasma enhanced chemical vapour deposition system were studied in diode configuration. The results were analysed in the framework of Fowler-Nordheim theory. The grown SWCNTs were found to be excellent field emitters, having emission current density higher than 20 mA/cm{sup 2} at a turn-on field of 1.3 V/μm. The as grown SWCNTs were further treated with Oxygen (O{sub 2}) plasma for 5 min and again field emission characteristics were measured. The O{sub 2} plasma treated SWCNTs have shown dramatic improvement in their field emission properties with emission current density of 111 mA/cm{sup 2} at a much lower turn on field of 0.8 V/μm. The as grown as well as plasma treated SWCNTs were also characterized by various techniques, such as scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy before and after O{sub 2} plasma treatment and the findings are being reported in this paper.

  6. High-Quality Amorphous-Crystalline Silicon Heterostructures Using the Grid-Based Triode Radio-Frequency Plasma Enhanced Chemical Vapour Deposition Method

    NASA Astrophysics Data System (ADS)

    Mahtani, Pratish

    The amorphous-crystalline silicon heterojunction (SHJ) represents a new paradigm in crystalline silicon (c-Si) photovoltaics (PV). To achieve the 27% efficiency target for SHJ PV, defects in the silicon heterointerface must be minimized by growing high-quality hydrogenated amorphous silicon (a-Si:H) onto the c-Si surfaces without deposition-related damage. Typically, a-Si:H is deposited using radio-frequency (RF) plasma enhanced chemical vapour deposition (PECVD), which in its conventional configuration directly exposes the c-Si growth surface to the ignited plasma. In this thesis, silicon heterostructures prepared by the grid-based triode RF PECVD method is investigated for the first time. The triode method allows for high-quality a-Si:H growth with the c-Si surfaces shielded from any potential plasma damage. Using a custom-built configurable PECVD facility, a systematic study was conducted and it was demonstrated that the triode method affords the preparation of a-Si:H with excellent bulk film quality and state-of-the-art passivation for c-Si surfaces. Using the triode method, an effective minority carrier lifetime (taueff) of 8.1 ms and an Auger-corrected surface recombination velocity (S) of 2.4 cm/s at an excess carrier density of 1015 cm-3 have been achieved for 1-2 ohm-cm n-type c-Si passivated with intrinsic a-Si:H. Further, using the triode method to deposit thin-layers of intrinsic and doped a-Si:H, a conventional SHJ solar cell structure was prepared and was found to exhibit an excellent implied Voc of 710 mV. Under all conditions scanned, samples prepared in the triode configuration showed improved passivation compared with samples prepared in the conventional diode configuration with the best triode prepared sample showing a nearly threefold increase in taueff and a twofold decrease in S compared with the best diode prepared sample. Furthermore, a-Si:H deposited using the triode method showed significantly improved bulk properties compared to diode

  7. Growth of multiwalled carbon nanotube arrays by chemical vapour deposition over iron catalyst and the effect of growth parameters

    NASA Astrophysics Data System (ADS)

    Radhakrishnan, J. K.; Pandian, P. S.; Padaki, V. C.; Bhusan, H.; Rao, K. U. B.; Xie, J.; Abraham, J. K.; Varadan, V. K.

    2009-04-01

    Multiwalled carbon nanotube (CNT) arrays were grown by catalytic thermal decomposition of acetylene, over Fe-catalyst deposited on Si-wafer in the temperature range 700-750 °C. The growth parameters were optimized to obtain dense arrays of multiwalled CNTs of uniform diameter. The vertical cross-section of the grown nanotube arrays reveals a quasi-vertical alignment of the nanotubes. The effect of varying the thickness of the catalyst layer and the effect of increasing the growth duration on the morphology and distribution of the grown nanotubes were studied. A scotch-tape test to check the strength of adhesion of the grown CNTs to the Si-substrate surface reveals a strong adhesion between the grown nanotubes and the substrate surface. Transmission electron microscopy analysis of the grown CNTs shows that the grown CNTs are multiwalled nanotubes with a bamboo structure, and follow the base-growth mechanism.

  8. Very low temperature epitaxy of Ge and Ge rich SiGe alloys with Ge2H6 in a Reduced Pressure - Chemical Vapour Deposition tool

    NASA Astrophysics Data System (ADS)

    Aubin, J.; Hartmann, J. M.; Bauer, M.; Moffatt, S.

    2016-07-01

    We have studied the very low temperature epitaxy of pure Ge and of Ge-rich SiGe alloys in a 200 mm industrial reduced pressure chemical vapour deposition tool. We have, first of all, benchmarked germane (GeH4) and digermane (Ge2H6) for the growth of pure Ge. Used Ge2H6 instead of GeH4 enabled us to dramatically increase the Ge growth rate at temperatures 425 °C and lower (5.6 nm min-1 compared to 0.14 nm min-1 at 350 °C with a Ge2H6 mass-flow one fourth that of GeH4). We have also evaluated at 400 °C, 100 Torr, the impact of the GeH4 or Ge2H6 mass-flow on the Ge growth rate. For a given Ge atomic flow, the higher surface reactivity of digermane yielded roughly five times higher growth rates than with germane. We have then combined digermane with disilane (Si2H6) or dichlorosilane (SiH2Cl2) in order to study the GeSi growth kinetics at 475 °C, 100 Torr. While the SiH2Cl2 mass-flow did not have any clear influence on the GeSi growth rate (with a 14 nm min-1 mean value, then), a Si2H6 mass-flow increase resulted in a slight GeSi growth rate increase (from 11 nm min-1 up to 14 nm min-1). Significantly higher Ge concentrations were otherwise accessed with dichlorosilane than with disilane, in the 77-82% range compared to the 39-53% range, respectively.

  9. A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Oliphant, C. J.; Jordaan, W. A.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Fabiane, M.; Manyala, N.

    2016-01-01

    A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

  10. Ethylene vinylacetate copolymer and nanographite composite as chemical vapour sensor

    NASA Astrophysics Data System (ADS)

    Stepina, Santa; Sakale, Gita; Knite, Maris

    2013-12-01

    Polymer-nanostructured carbon composite as chemical vapour sensor is described, made by the dissolution method of a non-conductive polymer, ethylene vinylacetate copolymer, mixed with conductive nanographite particles (carbon black). Sensor exhibits relative electrical resistance change in chemical vapours, like ethanol and toluene. Since the sensor is relatively cheap, easy to fabricate, it can be used in air quality monitoring and at industries to control hazardous substance concentration in the air, for example, to protect workers from exposure to chemical spills.

  11. Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

    NASA Astrophysics Data System (ADS)

    Alcotte, R.; Martin, M.; Moeyaert, J.; Cipro, R.; David, S.; Bassani, F.; Ducroquet, F.; Bogumilowicz, Y.; Sanchez, E.; Ye, Z.; Bao, X. Y.; Pin, J. B.; Baron, T.

    2016-04-01

    Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.

  12. Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP

    NASA Astrophysics Data System (ADS)

    Mohandas, Reshma A.; Freeman, Joshua R.; Rosamond, Mark C.; Hatem, Osama; Chowdhury, Siddhant; Ponnampalam, Lalitha; Fice, Martyn; Seeds, Alwyn J.; Cannard, Paul J.; Robertson, Michael J.; Moodie, David G.; Cunningham, John E.; Davies, A. Giles; Linfield, Edmund H.; Dean, Paul

    2016-04-01

    We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAs material found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and material doping level were also studied.

  13. Infrared hyperspectral imaging for chemical vapour detection

    NASA Astrophysics Data System (ADS)

    Ruxton, K.; Robertson, G.; Miller, W.; Malcolm, G. P. A.; Maker, G. T.; Howle, C. R.

    2012-10-01

    Active hyperspectral imaging is a valuable tool in a wide range of applications. One such area is the detection and identification of chemicals, especially toxic chemical warfare agents, through analysis of the resulting absorption spectrum. This work presents a selection of results from a prototype midwave infrared (MWIR) hyperspectral imaging instrument that has successfully been used for compound detection at a range of standoff distances. Active hyperspectral imaging utilises a broadly tunable laser source to illuminate the scene with light at a range of wavelengths. While there are a number of illumination methods, the chosen configuration illuminates the scene by raster scanning the laser beam using a pair of galvanometric mirrors. The resulting backscattered light from the scene is collected by the same mirrors and focussed onto a suitable single-point detector, where the image is constructed pixel by pixel. The imaging instrument that was developed in this work is based around an IR optical parametric oscillator (OPO) source with broad tunability, operating in the 2.6 to 3.7 μm (MWIR) and 1.5 to 1.8 μm (shortwave IR, SWIR) spectral regions. The MWIR beam was primarily used as it addressed the fundamental absorption features of the target compounds compared to the overtone and combination bands in the SWIR region, which can be less intense by more than an order of magnitude. We show that a prototype NCI instrument was able to locate hydrocarbon materials at distances up to 15 metres.

  14. Silicon nanowire arrays as learning chemical vapour classifiers.

    PubMed

    Niskanen, A O; Colli, A; White, R; Li, H W; Spigone, E; Kivioja, J M

    2011-07-22

    Nanowire field-effect transistors are a promising class of devices for various sensing applications. Apart from detecting individual chemical or biological analytes, it is especially interesting to use multiple selective sensors to look at their collective response in order to perform classification into predetermined categories. We show that non-functionalised silicon nanowire arrays can be used to robustly classify different chemical vapours using simple statistical machine learning methods. We were able to distinguish between acetone, ethanol and water with 100% accuracy while methanol, ethanol and 2-propanol were classified with 96% accuracy in ambient conditions. PMID:21673389

  15. Photocatalytic property of titanium dioxide thin films deposited by radio frequency magnetron sputtering in argon and water vapour plasma

    NASA Astrophysics Data System (ADS)

    Sirghi, L.; Hatanaka, Y.; Sakaguchi, K.

    2015-10-01

    The present work is investigating the photocatalytic activity of TiO2 thin films deposited by radiofrequency magnetron sputtering of a pure TiO2 target in Ar and Ar/H2O (pressure ratio 40/3) plasmas. Optical absorption, structure, surface morphology and chemical structure of the deposited films were comparatively studied. The films were amorphous and included a large amount of hydroxyl groups (about 5% of oxygen atoms were bounded to hydrogen) irrespective of the intentional content of water in the deposition chamber. Incorporation of hydroxyl groups in the film deposited in pure Ar plasma is explained as contamination of the working gas with water molecules desorbed by plasma from the deposition chamber walls. However, intentional input of water vapour into the discharge chamber decreased the deposition speed and roughness of the deposited films. The good photocatalytic activity of the deposited films could be attributed hydroxyl groups in their structures.

  16. The beauty of frost: nano-sulfur assembly via low pressure vapour deposition.

    PubMed

    Wang, Yu; Chen, Lu; Scudiero, Louis; Zhong, Wei-Hong

    2015-11-14

    A low pressure vapour deposition (LPVD) technique is proposed as an environmentally friendly, cost-effective and versatile strategy for fabrication of sulfur nanomaterials. By controlling the characteristics of the deposit substrate for the LPVD, various sulfur-based nanomaterials have been obtained through a substrate-induced self-assembly process. PMID:26383233

  17. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

    1976-01-01

    A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.

  18. Synthesis of Pt nanowires with the participation of physical vapour deposition

    NASA Astrophysics Data System (ADS)

    Dobrzański, Leszek A.; Szindler, Marek; Pawlyta, Mirosława; Szindler, Magdalena M.; Boryło, Paulina; Tomiczek, Błazej

    2016-05-01

    The following paper presents the possibility of formation of Pt nanowires, achieved by a three-step method consisting of conformal deposition of a carbon nanotube and conformal coverage with platinum by physical vapour deposition, followed by removal of the carbonaceous template. The characterization of this new nanostructure was carried out through scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD).

  19. Chemical vapor deposition sciences

    SciTech Connect

    1992-12-31

    Chemical vapor deposition (CVD) is a widely used method for depositing thin films of a variety of materials. Applications of CVD range from the fabrication of microelectronic devices to the deposition of protective coatings. New CVD processes are increasingly complex, with stringent requirements that make it more difficult to commercialize them in a timely fashion. However, a clear understanding of the fundamental science underlying a CVD process, as expressed through computer models, can substantially shorten the time required for reactor and process development. Research scientists at Sandia use a wide range of experimental and theoretical techniques for investigating the science of CVD. Experimental tools include optical probes for gas-phase and surface processes, a range of surface analytic techniques, molecular beam methods for gas/surface kinetics, flow visualization techniques and state-of-the-art crystal growth reactors. The theoretical strategy uses a structured approach to describe the coupled gas-phase and gas-surface chemistry, fluid dynamics, heat and mass transfer of a CVD process. The software used to describe chemical reaction mechanisms is easily adapted to codes that model a variety of reactor geometries. Carefully chosen experiments provide critical information on the chemical species, gas temperatures and flows that are necessary for model development and validation. This brochure provides basic information on Sandia`s capabilities in the physical and chemical sciences of CVD and related materials processing technologies. It contains a brief description of the major scientific and technical capabilities of the CVD staff and facilities, and a brief discussion of the approach that the staff uses to advance the scientific understanding of CVD processes.

  20. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

    1976-01-01

    The chemical vapor deposition (CVD) method for the growth of Si sheet on inexpensive substrate materials is investigated. The objective is to develop CVD techniques for producing large areas of Si sheet on inexpensive substrate materials, with sheet properties suitable for fabricating solar cells meeting the technical goals of the Low Cost Silicon Solar Array Project. Specific areas covered include: (1) modification and test of existing CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using standard and near-standard processing techniques.

  1. Formation and Yield of Multi-Walled Carbon Nanotubes Synthesized via Chemical Vapour Deposition Routes Using Different Metal-Based Catalysts of FeCoNiAl, CoNiAl and FeNiAl-LDH

    PubMed Central

    Hussein, Mohd Zobir; Mohamad Jaafar, Adila; Hj. Yahaya, Asmah; Masarudin, Mas Jaffri; Zainal, Zulkarnain

    2014-01-01

    Multi-walled carbon nanotubes (MWCNTs) were prepared via chemical vapor deposition (CVD) using a series of different catalysts, derived from FeCoNiAl, CoNiAl and FeNiAl layered double hydroxides (LDHs). Catalyst-active particles were obtained by calcination of LDHs at 800 °C for 5 h. Nitrogen and hexane were used as the carrier gas and carbon source respectively, for preparation of MWCNTs using CVD methods at 800 °C. MWCNTs were allowed to grow for 30 min on the catalyst spread on an alumina boat in a quartz tube. The materials were subsequently characterized through X-ray diffraction, Fourier transform infrared spectroscopy, surface area analysis, field emission scanning electron microscopy and transmission electron microscopy. It was determined that size and yield of MWCNTs varied depending on the type of LDH catalyst precursor that is used during synthesis. MWCNTs obtained using CoNiAl-LDH as the catalyst precursor showed smaller diameter and higher yield compared to FeCoNiAl and FeNiAl LDHs. PMID:25380526

  2. Formation and yield of multi-walled carbon nanotubes synthesized via chemical vapour deposition routes using different metal-based catalysts of FeCoNiAl, CoNiAl and FeNiAl-LDH.

    PubMed

    Hussein, Mohd Zobir; Jaafar, Adila Mohamad; Yahaya, Asmah Hj; Masarudin, Mas Jaffri; Zainal, Zulkarnain

    2014-01-01

    Multi-walled carbon nanotubes (MWCNTs) were prepared via chemical vapor deposition (CVD) using a series of different catalysts, derived from FeCoNiAl, CoNiAl and FeNiAl layered double hydroxides (LDHs). Catalyst-active particles were obtained by calcination of LDHs at 800 °C for 5 h. Nitrogen and hexane were used as the carrier gas and carbon source respectively, for preparation of MWCNTs using CVD methods at 800 °C. MWCNTs were allowed to grow for 30 min on the catalyst spread on an alumina boat in a quartz tube. The materials were subsequently characterized through X-ray diffraction, Fourier transform infrared spectroscopy, surface area analysis, field emission scanning electron microscopy and transmission electron microscopy. It was determined that size and yield of MWCNTs varied depending on the type of LDH catalyst precursor that is used during synthesis. MWCNTs obtained using CoNiAl-LDH as the catalyst precursor showed smaller diameter and higher yield compared to FeCoNiAl and FeNiAl LDHs. PMID:25380526

  3. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Campbell, A. G.; Johnson, R. E.; Kenty, J. L.; Moudy, L. A.; Shaw, G. L.; Simpson, W. I.; Yang, J. J.

    1978-01-01

    The objective was to investigate and develop chemical vapor deposition (CVD) techniques for the growth of large areas of Si sheet on inexpensive substrate materials, with resulting sheet properties suitable for fabricating solar cells that would meet the technical goals of the Low Cost Silicon Solar Array Project. The program involved six main technical tasks: (1) modification and test of an existing vertical-chamber CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using impurity diffusion and other standard and near-standard processing techniques supplemented late in the program by the in situ CVD growth of n(+)/p/p(+) sheet structures subsequently processed into experimental cells.

  4. Thin film semiconductor nanomaterials and nanostructures prepared by physical vapour deposition: An atomic force microscopy study

    NASA Astrophysics Data System (ADS)

    Nesheva, D.; Petrova, A.; Stavrev, S.; Levi, Z.; Aneva, Z.

    2007-05-01

    Amorphous/nanocrystalline SiOx/CdSe, GeS2/CdSe, SiOx/ZnSe and Se/CdSe amorphous multilayers (MLs) were grown by consecutive physical vapour deposition of the constituent materials at room substrate temperature. A step-by-step manner of deposition was applied for the preparation of each layer (2 10nm thick) of MLs. Surface morphology has been investigated by atomic force microscopy (AFM) in order to get information about ML interfaces. For a scanned area of 3.4×4μmSiOx/CdSe and GeS2/CdSe MLs showed surface roughness which is around three times greater than the roughness of SiOx/ZnSe MLs. This observation has been connected with effects of both film composition and deposition rate. For a scanned area of 250×250nm the roughness determined in all MLs displayed close values and a similar increase with the ML period. The latter has been related to the flexible structure of amorphous materials. The AFM results, in good agreement with previous X-ray diffraction and high resolution electron microscopy data, indicate that the application of step-by-step physical vapour deposition makes possible fabrication of various amorphous/nanocrystalline MLs with smooth interfaces and good artificial periodicity at low substrate temperatures.

  5. Crystal growth of HfS 2 by chemical vapour transport with halogen (Cl, Br, I)

    NASA Astrophysics Data System (ADS)

    Fiechter, S.; Eckert, K.

    1988-05-01

    Single crystals of HfS 2 have been prepared by chemical vapour transport (CVT) with halogen. Depending on the transporting agent added, exergonic or endergonic transport was observed. Employing 0.5 mg/cm 3 chlorine or bromine in evacuated and sealed quartz ampoules, exergonic transport occurs. In a temperature gradient from 850 to 870 K transparent reddish-orange crystal platelets of pseudohexagonal shape (10×10×0.05 mm3) were obtained. Endergonic transport, found with iodine as transporting agent, first starts at higher temperatures (1270-1220 K). A thermochemical study of the vapour phase composition revealed that gaseous HfHal 4 and HfHal 3 ( Hal = Cl, Br) are responsible for the exergonic transport observed. Because of the higher stability of HfS 2 against iodine, CVT first starts at elevated temperatures. In the vapour phase Hfl and Hfl 2 dominate and effect a reversal of the transport direction.

  6. An investigation of the growth of bismuth whiskers and nanowires during physical vapour deposition

    NASA Astrophysics Data System (ADS)

    Stanley, S. A.; Stuttle, C.; Caruana, A. J.; Cropper, M. D.; Walton, A. S. O.

    2012-10-01

    Bismuth thin films of thickness in the region of 500 nm have been prepared by planar magnetron sputtering onto glass, silicon and GaAs substrates. Electron microscopy of these films reveals that bismuth whiskers grow spontaneously when the substrate is heated to temperatures between 110 and 140 °C during deposition and the optimum temperature for such growth is largely independent of substrate. Depositing films under similar conditions using thermal evaporation does not, however, produce the whisker growth. X-ray diffraction has been employed to investigate film texture with temperature and it has been shown that the film crystallites are predominantly [1 1 0] and [1 1 1] oriented. The [1 1 0] orientation of the crystallites dominates at deposition temperatures above 110 °C for sputter deposition and the [1 1 1] at lower temperatures. The optimum temperature for whisker growth coincides with the temperature for the change between predominant orientations. While sputter deposition appears to favour films with crystallite orientation of [1 1 0], thermal evaporation favours [1 1 1] and has a higher change-over temperature. The whiskers that grow from the film emerge at off-normal angles between 43.3° and 69.2° with a mean of 54 ± 3°. The projected length of whiskers on a 500 nm film on a GaAs substrate shows a wide distribution to a maximum of more than 100 µm. The mean projected length for this sample was 16 ± 1 µm and the diameter is around 0.5 µm. Measurements of the electrical properties of the whiskers at room temperature reveals ohmic behaviour with an estimated resistivity of 2.2 ± 0.2 µΩ m. Detailed examination of scanning electron micrographs, eliminates all growth mechanisms except tip growth by a non-catalysed vapour-solid/vapour-liquid-solid method. By depositing thinner films it is shown that this spontaneous growth of whiskers offers a route to fabricate high quality bismuth nanowires of lengths exceeding 10 µm.

  7. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Johnson, R. E.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

    1976-01-01

    A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet.

  8. Crystalline gamma-Al2O3 physical vapour deposition-coating for steel thixoforging tools.

    PubMed

    Bobzin, K; Hirt, G; Bagcivan, N; Khizhnyakova, L; Ewering, M

    2011-10-01

    The process of thixoforming, which has been part of many researches during the last decades, combines the advantages of forging and casting for the shaping of metallic components. But due to the high temperatures of semi-solid steel alloys high demands on the tools are requested. To resists the thermal and mechanical loads (wear, friction, thermal and thermomechanical fatigue) protecting thin films are necessary. In this regard crystalline gamma-Al2O3 deposited via Physical Vapour Deposition (PVD) is a promising candidate: It exhibits high thermal stability, high oxidation resistance and high hot hardness. In the present work the application of a (Ti, Al)N/gamma-Al2O3 coating deposited by means of Magnetron Sputter Ion Plating in an industrial coating unit is presented. The coating was analysed by means of Rockwell test, nanoindentation, and Scanning Electron Microscopy (SEM). The coated tool was tested in thixoforging experiments with steel grade X210CrW12 (AlSI D6). The surface of the coated dies was examined with Scanning Electron Microscope (SEM) after 22, 42, 90 and 170 forging cycles. PMID:22400259

  9. Atmospheric pressure chemical vapour deposition of vanadium oxides

    NASA Astrophysics Data System (ADS)

    Manning, Troy Darrell

    The APCVD of vanadium(IV) oxide thin films from halide precursors was investigated. It was found that the phase of vanadium oxide obtained could be controlled by the reactor temperature and precursor ratio. For vanadium(IV) chloride and water, reactor temperatures > 550 °C and an excess of water over VCI4 was required to produce VO2 thin films. For vanadium(V) oxytrichloride and water, reactor temperatures > 550 °C and an excess of water over VOCI3 also produced VO2 but required low total gas flow rates (< 1 L min 1) for complete coverage of the substrate. Vanadium(IV) oxide thin films doped with metal ions (W, Cr, Nb, Ti, Mo or Sn) were also prepared by the APCVD process in order to reduce the thermochromic transition temperature (TC) from 68 °C for the undoped material to < 30 °C. The most successful dopant was tungsten, introduced into the VOCl3, and water system as WCI6, which lowered T to 5 °C for a 3 atom% tungsten doped thin film. Tungsten (VI) ethoxide was introduced into the VCI4 and water system and reduced TC, of VO2, to 42 °C for a 1 atom% tungsten doped thin film. Chromium, introduced as CrCO2Cl2, formed a chromium vanadium oxide that did not display any thermochromic properties. Niobium, introduced as NbCl5 into the VOCl3 system, reduced TC of VO2, but the amount of niobium introduced could not be easily controlled. Molybdenum, introduced as MoCI5, also reduced TC of VO2, but the form of the molybdenum appeared to be different from that required for complete control of TC, Titanium, introduced as TiCl4, produced phase segregated films of VO2 and TiO2, with interesting multifunctional properties and a reduced TC. Tin, introduced as SnCl4, also formed a phase segregated material of VO2, and SnO2, with a slightly reduced TC.

  10. Chemical vapour deposition: Transition metal carbides go 2D

    NASA Astrophysics Data System (ADS)

    Gogotsi, Yury

    2015-11-01

    The unique properties of 2D materials, such as graphene or transition metal dichalcogenides, have been attracting much attention in the past decade. Now, metallically conductive and even superconducting transition metal carbides are entering the game.

  11. Simple Chemical Vapor Deposition Experiment

    ERIC Educational Resources Information Center

    Pedersen, Henrik

    2014-01-01

    Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

  12. Chemical vapor deposition of sialon

    DOEpatents

    Landingham, R.L.; Casey, A.W.

    A laminated composite and a method for forming the composite by chemical vapor deposition are described. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200/sup 0/C; and impinging a gas containing N/sub 2/, SiCl/sub 4/, and AlCl/sub 3/ on the surface.

  13. Effect of process parameters on the chemical vapour synthesis of nanocrystalline titania

    NASA Astrophysics Data System (ADS)

    Md, Imteyaz Ahmad; Bhattacharya, S. S.

    2008-08-01

    In this investigation nanocrystalline titania powders were produced by the chemical vapour synthesis (CVS) route and characterized by standard techniques of XRD, HRTEM and BET. The effects of precursor/gas flow rates, hotwall temperature and system pressure on the particle size and distribution, as well as phase composition of the synthesized nanocrystalline titania powder, were studied. It was demonstrated that by suitably adjusting the process parameters during CVS it becomes possible to control the anatase crystallite size, specific surface area and the rutile content in the synthesized nanocrystalline titania powders.

  14. Chemically assisted vapour transport for bulk ZnO crystal growth

    NASA Astrophysics Data System (ADS)

    Santailler, Jean-Louis; Audoin, Claire; Chichignoud, Guy; Obrecht, Rémy; Kaouache, Belkhiri; Marotel, Pascal; Pelenc, Denis; Brochen, Stéphane; Merlin, Jérémy; Bisotto, Isabelle; Granier, Carole; Feuillet, Guy; Levy, François

    2010-11-01

    A chemically assisted vapour phase transport (CVT) method is proposed for the growth of bulk ZnO crystals. Thermodynamic computations have confirmed the possibility of using CO as a sublimation activator for enhancing the sublimation rate of the feed material in a large range of pressures (10 -3 to 1 atm) and temperatures (800-1200 °C). Growth runs in a specific and patented design yielded single ZnO crystals up to 46 mm in diameter and 8 mm in thickness, with growth rates up to 400 μm/h. These values are compatible with an industrial production rate. N type ZnO crystals ( μ=182 cm 2/(V s) and n=7 10 15 cm -3) obtained by this CVT method (Chemical Vapour Transport) present a high level of purity (10-30 times better than hydrothermal ZnO crystals), which may be an advantage for obtaining p-type doped layers ([Li] and [Al] <10 +15 cm -3). Structural (HR-XRD), defect density (EPD), electrical (Hall measurements) and optical (photoluminescence) properties are presented.

  15. Chemical vapour etching-based porous silicon and grooving: Application in silicon solar cells processing

    NASA Astrophysics Data System (ADS)

    Ben Rabha, M.; Boujmil, M. F.; Saadoun, M.; Bessaïs, B.

    2005-06-01

    Sponge like porous silicon (PS) was formed by a simple and low cost chemical vapour etching (CVE) method and applied in polycrystalline silicon (mc-Si) solar cells processing. The CVE method consists of exposing Si wafers to HNO3/HF vapours. It was shown that 8 min of HNO3/HF CVE (volume ratio = 1/7) is sufficient to form optimized PS layers on the emitter of mc-Si cells. The CVE-based PS can simultaneously passivate the Si surface and serves as an effective antireflection coating (ARC). As a result, the reflectivity decreases by about 60% of its initial value and the internal quantum efficiency is improved, particularly in the short wavelength region. For acid vapours rich in HNO3 (HNO3/HF >1/4), the CVE method favours the formation of a (NH4)2SiF6 powder, which is highly soluble in water. These findings let us achieve anisotropic grooving that enables to groove mc-Si wafers locally and in depth using an adequate anti-acid mask. The CVE - based grooving technique was used to form buried metallic contacts on the rear and frontal surface of the Si wafer in order to improve the current collection in mc-Si solar cells. No alteration of the spectral response in the long wavelength range was observed in mc-Si cells with rear-buried contacts. Adjustments of theoretical spectral responses to experimental ones show an increase in the effective electron diffusion length (Ln), which was attributed to Al gettering (passivation) at grain boundaries and to the reduction of the effective thickness of the base of the cells.

  16. Chemical vapor deposition of sialon

    DOEpatents

    Landingham, Richard L.; Casey, Alton W.

    1982-01-01

    A laminated composite and a method for forming the composite by chemical vapor deposition. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200.degree. C.; and impinging a gas containing in a flowing atmosphere of air N.sub.2, SiCl.sub.4, and AlCl.sub.3 on the surface.

  17. Well-controlled metal co-catalysts synthesised by chemical vapour impregnation for photocatalytic hydrogen production and water purification.

    PubMed

    Su, Ren; Forde, Michael M; He, Qian; Shen, Yanbin; Wang, Xueqin; Dimitratos, Nikolaos; Wendt, Stefan; Huang, Yudong; Iversen, Bo B; Kiely, Christopher J; Besenbacher, Flemming; Hutchings, Graham J

    2014-10-28

    As co-catalyst materials, metal nanoparticles (NPs) play crucial roles in heterogeneous photocatalysis. The photocatalytic performance strongly relies on the physical properties (i.e., composition, microstructure, and surface impurities) of the metal NPs. Here we report a convenient chemical vapour impregnation (CVI) approach for the deposition of monometallic-, alloyed, and core-shell structured metal co-catalysts onto the TiO2 photocatalyst. The as-synthesised metal NPs are highly dispersed on the support and show narrow size distributions, which suit photocatalysis applications. More importantly, the surfaces of the as-synthesised metal NPs are free of protecting ligands, enabling the photocatalysts to be ready to use without further treatment. The effect of the metal identity, the alloy chemical composition, and the microstructure on the photocatalytic performance has been investigated for hydrogen production and phenol decomposition. Whilst the photocatalytic H2 production performance can be greatly enhanced by using the core-shell structured co-catalyst (Pdshell-Aucore and Ptshell-Aucore), the Ptshell-Aucore modified TiO2 yields enhanced quantum efficiency but a reduced effective decomposition of phenol to CO2 compared to that of the monometallic counterparts. We consider the CVI approach provides a feasible and elegant process for the decoration of photocatalyst materials. PMID:24970298

  18. High temperature stability of nanocrystalline anatase powders prepared by chemical vapour synthesis under varying process parameters

    NASA Astrophysics Data System (ADS)

    Ahmad, Md. Imteyaz; Fasel, Claudia; Mayer, Thomas; Bhattacharya, S. S.; Hahn, Horst

    2011-05-01

    Systematic variation in the high temperature stability of nanocrystalline anatase powders prepared by chemical vapour synthesis (CVS) using titanium (IV) isopropoxide under varying flow rates of oxygen and helium was obtained by progressively shifting the decomposition product from C 3H 6 to CO 2. The as-synthesised powders were characterised by high temperature X-ray diffraction (HTXRD), simultaneous thermo-gravimetric analyses (STA), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and transmission electron microscopy (TEM). It was observed that the anatase to rutile transformation temperature progressively increased for samples synthesised at higher O 2/He flow rate ratios. The improved anatase stability was attributed to the presence of incorporated carbon within the titania structure and confirmed by a high temperature carbon desorption peak.

  19. Chemical vapor deposition of epitaxial silicon

    DOEpatents

    Berkman, Samuel

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  20. Laser Induced Chemical Liquid Phase Deposition (LCLD)

    SciTech Connect

    Nanai, Laszlo; Balint, Agneta M.

    2012-08-17

    Laser induced chemical deposition (LCLD) of metals onto different substrates attracts growing attention during the last decade. Deposition of metals onto the surface of dielectrics and semiconductors with help of laser beam allows the creation of conducting metal of very complex architecture even in 3D. In the processes examined the deposition occurs from solutions containing metal ions and reducing agents. The deposition happens in the region of surface irradiated by laser beam (micro reactors). Physics -chemical reactions driven by laser beam will be discussed for different metal-substrate systems. The electrical, optical, mechanical properties of created interfaces will be demonstrated also including some practical-industrial applications.

  1. Numerical modeling tools for chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Jasinski, Thomas J.; Childs, Edward P.

    1992-01-01

    Development of general numerical simulation tools for chemical vapor deposition (CVD) was the objective of this study. Physical models of important CVD phenomena were developed and implemented into the commercial computational fluid dynamics software FLUENT. The resulting software can address general geometries as well as the most important phenomena occurring with CVD reactors: fluid flow patterns, temperature and chemical species distribution, gas phase and surface deposition. The physical models are documented which are available and examples are provided of CVD simulation capabilities.

  2. Chemical vapor deposition of mullite coatings

    DOEpatents

    Sarin, Vinod; Mulpuri, Rao

    1998-01-01

    This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

  3. Spectroscopic investigation of different concentrations of the vapour deposited copper phthalocyanine as a "guest" in polyimide matrix

    NASA Astrophysics Data System (ADS)

    Georgiev, Anton; Yordanov, Dancho; Dimov, Dean; Assa, Jacob; Spassova, Erinche; Danev, Gencho

    2015-04-01

    Nanocomposite layers 250 nm copper phthalocyanine/polyimide prepared by simultaneous vapour deposition of three different sources were studied. Different concentrations of copper phthalocyanine as a "guest" in polyimide matrix as a function of conditions of the preparation have been determined by FTIR (Fourier Transform Infrared) and UV-VIS (Ultraviolet-Visible) spectroscopies. The aim was to estimate the possibility of the spectroscopic methods for quantitative determination of the "guest" and compare with the quality of the polyimide thin films in relation to the "guest" concentration. The band at 1334 cm-1 has been used for quantitative estimation of "guest" in polyimide matrix. The concentrations of the copper phthalocyanine less than 20% require curve fitting techniques with Fourier self deconvolution. The relationship between "guest" concentrations and degree of imidization, as well as the electronic UV-VIS spectra are discussed in relation to the composition, imidization degree and the two crystallographic modification of the embedded chromophore.

  4. Spectroscopic investigation of different concentrations of the vapour deposited copper phthalocyanine as a "guest" in polyimide matrix.

    PubMed

    Georgiev, Anton; Yordanov, Dancho; Dimov, Dean; Assa, Jacob; Spassova, Erinche; Danev, Gencho

    2015-04-01

    Nanocomposite layers 250 nm copper phthalocyanine/polyimide prepared by simultaneous vapour deposition of three different sources were studied. Different concentrations of copper phthalocyanine as a "guest" in polyimide matrix as a function of conditions of the preparation have been determined by FTIR (Fourier Transform Infrared) and UV-VIS (Ultraviolet-Visible) spectroscopies. The aim was to estimate the possibility of the spectroscopic methods for quantitative determination of the "guest" and compare with the quality of the polyimide thin films in relation to the "guest" concentration. The band at 1334 cm(-1) has been used for quantitative estimation of "guest" in polyimide matrix. The concentrations of the copper phthalocyanine less than 20% require curve fitting techniques with Fourier self deconvolution. The relationship between "guest" concentrations and degree of imidization, as well as the electronic UV-VIS spectra are discussed in relation to the composition, imidization degree and the two crystallographic modification of the embedded chromophore. PMID:25638427

  5. Ambient temperature operated acetaldehyde vapour detection of spray deposited cobalt doped zinc oxide thin film.

    PubMed

    Shalini, S; Balamurugan, D

    2016-03-15

    Undoped and Co-doped ZnO thin films were prepared by a home built spray pyrolysis method. X-ray diffraction results indicate that both undoped and Co-doped ZnO have a polycrystalline nature and a preferential orientation peak in the (002) plane. From a field-emission scanning electron micrographs of annealed films, a uniform distribution of nanoparticles along with nanorods was observed. UV-Visible measurement indicated that all the films are transparent in the visible region. The electrical resistance was also reported. The acetaldehyde sensing behaviour of the prepared undoped and Co-doped ZnO thin films was studied using the chemi-resistive method at ambient temperature (∼30 °C). In the presence of 10 ppm of acetaldehyde vapour, the Co-doped ZnO thin films showed good sensing response of 74% with fast response and recovery time of 3 s and 110 s respectively. PMID:26748067

  6. Occult chemical deposition to a Maritime forest

    SciTech Connect

    Vong, R.J.; Kowalski, A.S.

    1996-12-31

    Studies of chemical fluxes from the atmosphere to vegetated surfaces have suggested that, along with conventional wet and dry processes, an additional chemical input occurs when wind-blown cloud droplets are directly intercepted by vegetation. This cloud water deposition process has been sometimes termed {open_quote}occult deposition{close_quote} because the water fluxes cannot ordinarily be observed using rain gauges. Such occult deposition of cloud water has rarely been measured directly, in part because of the complexity of the governing turbulent transfer process. However, reviews by the National Acidic Precipitation Assessment Program (NAPAP SoS/T-2,6) have suggested that the chemical flux to be forest decline in the eastern USA. This paper presents direct field measurements occult chemical fluxes to a silver fir forest located in complex terrain on the Olympic Peninsula near the coast of Washington State, USA.

  7. Towards engineered branch placement: Unreal™ match between vapour-liquid-solid glancing angle deposition nanowire growth and simulation

    SciTech Connect

    Taschuk, M. T.; Tucker, R. T.; LaForge, J. M.; Beaudry, A. L.; Kupsta, M. R.; Brett, M. J.

    2013-12-28

    The vapour-liquid-solid glancing angle deposition (VLS-GLAD) process is capable of producing complex nanotree structures with control over azimuthal branch orientation and height. We have developed a thin film growth simulation including ballistic deposition, simplified surface diffusion, and droplet-mediated cubic crystal growth for the VLS-GLAD process using the Unreal{sup TM} Development Kit. The use of a commercial game engine has provided an interactive environment while allowing a custom physics implementation. Our simulation's output is verified against experimental data, including a volumetric film reconstruction produced using focused ion beam and scanning-electron microscopy (SEM), crystallographic texture, and morphological characteristics such as branch orientation. We achieve excellent morphological and texture agreement with experimental data, as well as qualitative agreement with SEM imagery. The simplified physics in our model reproduces the experimental films, indicating that the dominant role flux geometry plays in the VLS-GLAD competitive growth process responsible for azimuthally oriented branches and biaxial crystal texture evolution. The simulation's successful reproduction of experimental data indicates that it should have predictive power in designing novel VLS-GLAD structures.

  8. Chemical-Vapor-Deposited Diamond Film

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1999-01-01

    This chapter describes the nature of clean and contaminated diamond surfaces, Chemical-vapor-deposited (CVD) diamond film deposition technology, analytical techniques and the results of research on CVD diamond films, and the general properties of CVD diamond films. Further, it describes the friction and wear properties of CVD diamond films in the atmosphere, in a controlled nitrogen environment, and in an ultra-high-vacuum environment.

  9. Chemical effect on ozone deposition over seawater

    EPA Science Inventory

    Surface layer resistance plays an important role in determining ozone deposition velocity over seawater. Recent studies suggest that surface layer resistance over sea-water is influenced by wind-speed and chemical interaction at the air-water interface. Here, we investigate the e...

  10. Low-pressure, chemical vapor deposition polysilicon

    NASA Technical Reports Server (NTRS)

    Gallagher, B. D.; Crotty, G. C.

    1986-01-01

    The low-pressure chemical vapor deposition (LPCVD) of polycrystalline silicon was investigted. The physical system was described, as was the controlling process parameters and requirements for producing films for use as an integral portion of the solar cell contact system.

  11. Chemical vapor deposition coating for micromachines

    SciTech Connect

    MANI,SEETHAMBAL S.; FLEMING,JAMES G.; SNIEGOWSKI,JEFFRY J.; DE BOER,MAARTEN P.; IRWIN,LAWRENCE W.; WALRAVEN,JEREMY A.; TANNER,DANELLE M.; DUGGER,MICHAEL T.

    2000-04-21

    Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors will present a process used to selectively coat MEMS devices with tungsten using a CVD (Chemical Vapor Deposition) process. The selective W deposition process results in a very conformal coating and can potentially solve both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through silicon reduction of WF{sub 6}, which results in a self-limiting reaction. The selective deposition of W only on polysilicon surfaces prevents electrical shorts. Further, the self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. Selective tungsten is deposited after the removal of the sacrificial oxides to minimize process integration problems. This tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. Results from tungsten deposition on MEMS structures with dimples will be presented. The effect of wet and vapor phase cleanings prior to the deposition will be discussed along with other process details. The W coating improved wear by orders of magnitude compared to uncoated parts. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable.

  12. Physical vapour deposition of zirconia on titanium: fabrication, characterization and interaction with human osteoblast cells.

    PubMed

    Kaluđerović, Milena R; Mändl, Stephan; Kohlweyer, Hannes; Graf, Hans-Ludwig

    2015-12-01

    The physical vapor deposition of zirconia was used to prepare two new titanium-based surfaces M1 and M2 with a different layer thickness. These novel surfaces were characterized for chemistry, topography and morphology by surface and solid state techniques. Primary osteoblast cells were used for in vitro studies. DAPI assay was applied for cell proliferation, while for bone sialoprotein (BSP), osteonectin and transforming growth factor-β (TGF-β) expression immunohistochemical analyses were employed. Materials M1 and M2 affected cell proliferation accordingly to their surface roughness with their impact on cell number being between the impact of two rough (Ticer, SS) and two smooth surfaces (Ti cp and Cercon). Different influence of the investigated materials on the osteoblastic production of BSP (all materials similar impact), ON (Cercon-higher; SS-lower for others) and TGF-β (Cercon different) was found. PMID:26507200

  13. Hair analysis as a useful procedure for detection of vapour exposure to chemical warfare agents: simulation of sulphur mustard with methyl salicylate.

    PubMed

    Spiandore, Marie; Piram, Anne; Lacoste, Alexandre; Josse, Denis; Doumenq, Pierre

    2014-06-01

    Chemical warfare agents (CWA) are highly toxic compounds which have been produced to kill or hurt people during conflicts or terrorist attacks. Despite the fact that their use is strictly prohibited according to international convention, populations' exposure still recently occurred. Development of markers of exposure to CWA is necessary to distinguish exposed victims from unexposed ones. We present the first study of hair usage as passive sampler to assess contamination by chemicals in vapour form. This work presents more particularly the hair adsorption capacity for methyl salicylate used as a surrogate of the vesicant sulphur mustard. Chemical vapours toxicity through the respiratory route has historically been defined through Haber's law's concentration-time (Ct) product, and vapour exposure of hair to methyl salicylate was conducted with various times or doses of exposure in the range of incapacitating and lethal Ct products corresponding to sulphur mustard. Following exposure, extraction of methyl salicylate from hair was conducted by simple soaking in dichloromethane. Methyl salicylate could be detected on hair for vapour concentration corresponding to about one fifth of the sulphur mustard concentration that would kill 50% of exposed individuals (LCt50). The amount of methyl salicylate recovered from hair increased with time or dose of exposure. It showed a good correlation with the concentration-time product, suggesting that hair could be used like a passive sampler to assess vapour exposure to chemical compounds. It introduces great perspectives concerning the use of hair as a marker of exposure to CWA. PMID:24817050

  14. Deposition of H15NO3 vapour to white oak, red maple and loblolly pine foliage: experimental observations and a generalized model

    SciTech Connect

    Hanson, Paul J; Garten Jr, Charles T

    1992-10-01

    Nitric acid vapour enriched with {sup 15}N (H{sup 15}NO{sub 3}) was volatilized into the cuvette of an open-flow gas exchange system containing red maple (Acer rubrum L.), white oak (Quercus alba L.), or loblolly pine (Pinus taeda L.) seedling shoots to facilitate direct measurements of total foliar deposition, and subsequent assessments of the rate of HNO{sub 3} movement across the cuticle (transcuticular uptake). Total H{sup 15}NO{sub 3} vapour deposition to foliar surfaces ranged from <5 to 27 nmol m{sup -2} s{sup -1} the variability being largely accounted for by differences in HNO{sub 3} concentrations and leaf conductance. Mean whole-leaf conductance to HNO{sub 3} ranged between 0.9 and 3.4 mm s{sup -1} for hardwoods and between 6 and 34 mm s{sup -1} for loblolly pine. Of the total H{sup 15}NO{sub 3} vapour deposited to leaves, an average of 39 to 48% was immediately 'bound' into hardwood foliage whereas only 3% was bound to loblolly pine needles. This implies that rain events might extract greater amounts of HNO{sub 3}-derived nitrate in throughfall from conifer canopies as compared to hardwood canopies. Post-exposure H{sup 15}NO{sub 3} uptake rates across the leaf cuticle increased with surface nitrate concentrations, but were 1 to 2 orders of magnitude lower (O06 to 0.24 nmol m{sup -2} s{sup -1}) than total HNO{sub 3}, deposition during exposures. A generalized leaf-level model of HNO{sub 3} deposition to foliage capable of simulating deposition pathways to sorption sites on the leaf surface, and to the metabolically active leaf interior via transcuticular or stomatal pathways is formulated and suggested for use in planning future work on HNO{sub 3} deposition.

  15. Chemical vapor deposition of group IIIB metals

    DOEpatents

    Erbil, A.

    1989-11-21

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

  16. Chemical vapor deposition of group IIIB metals

    DOEpatents

    Erbil, Ahmet

    1989-01-01

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.

  17. Chemical deposition methods using supercritical fluid solutions

    DOEpatents

    Sievers, Robert E.; Hansen, Brian N.

    1990-01-01

    A method for depositing a film of a desired material on a substrate comprises dissolving at least one reagent in a supercritical fluid comprising at least one solvent. Either the reagent is capable of reacting with or is a precursor of a compound capable of reacting with the solvent to form the desired product, or at least one additional reagent is included in the supercritical solution and is capable of reacting with or is a precursor of a compound capable of reacting with the first reagent or with a compound derived from the first reagent to form the desired material. The supercritical solution is expanded to produce a vapor or aerosol and a chemical reaction is induced in the vapor or aerosol so that a film of the desired material resulting from the chemical reaction is deposited on the substrate surface. In an alternate embodiment, the supercritical solution containing at least one reagent is expanded to produce a vapor or aerosol which is then mixed with a gas containing at least one additional reagent. A chemical reaction is induced in the resulting mixture so that a film of the desired material is deposited.

  18. Advanced deposition model for thermal activated chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Cai, Dang

    Thermal Activated Chemical Vapor Deposition (TACVD) is defined as the formation of a stable solid product on a heated substrate surface from chemical reactions and/or dissociation of gaseous reactants in an activated environment. It has become an essential process for producing solid film, bulk material, coating, fibers, powders and monolithic components. Global market of CVD products has reached multi billions dollars for each year. In the recent years CVD process has been extensively used to manufacture semiconductors and other electronic components such as polysilicon, AlN and GaN. Extensive research effort has been directed to improve deposition quality and throughput. To obtain fast and high quality deposition, operational conditions such as temperature, pressure, fluid velocity and species concentration and geometry conditions such as source-substrate distance need to be well controlled in a CVD system. This thesis will focus on design of CVD processes through understanding the transport and reaction phenomena in the growth reactor. Since the in situ monitor is almost impossible for CVD reactor, many industrial resources have been expended to determine the optimum design by semi-empirical methods and trial-and-error procedures. This approach has allowed the achievement of improvements in the deposition sequence, but begins to show its limitations, as this method cannot always fulfill the more and more stringent specifications of the industry. To resolve this problem, numerical simulation is widely used in studying the growth techniques. The difficulty of numerical simulation of TACVD crystal growth process lies in the simulation of gas phase and surface reactions, especially the latter one, due to the fact that very limited kinetic information is available in the open literature. In this thesis, an advanced deposition model was developed to study the multi-component fluid flow, homogeneous gas phase reactions inside the reactor chamber, heterogeneous surface

  19. Construction of conductive multilayer films of biogenic triangular gold nanoparticles and their application in chemical vapour sensing

    NASA Astrophysics Data System (ADS)

    Singh, Amit; Chaudhari, Minakshi; Sastry, Murali

    2006-05-01

    Metal nanoparticles are interesting building blocks for realizing films for a number of applications that include bio- and chemical sensing. To date, spherical metal nanoparticles have been used to generate functional electrical coatings. In this paper we demonstrate the synthesis of electrically conductive coatings using biologically prepared gold nanotriangles as the building blocks. The gold nanotriangles are prepared by the reduction of aqueous chloroaurate ions using an extract of the lemongrass plant (Cymbopogon flexuosus) which are thereafter assembled onto a variety of substrates by simple solution casting. The conductivity of the film shows a drastic fall upon mild heat treatment, leading to the formation of electrically conductive thin films of nanoparticles. We have also investigated the possibility of using the gold nanotriangle films in vapour sensing. A large fall in film resistance is observed upon exposure to polar molecules such as methanol, while little change occurs upon exposure to weakly polar molecules such as chloroform.

  20. Physical-chemical conditions of ore deposition

    USGS Publications Warehouse

    Barton, P.B., Jr.

    1981-01-01

    Ore deposits form under a wide range of physical and chemical conditions, but those precipitating from hot, aqueous fluids-i.e. the hydrothermal deposits-form generally below 700??C and at pressures of only 1 or 2 kbar or less. Natural aqueous fluids in rocks may extract metal and sulfur from a variety of rock types or may acquire them as a residual heritage from a crystallizing silicate magma. Ore-forming hydrothermal fluids never appear as hot springs (except in deep, submarine situations) because they boil, mix with surface waters, and cool, thereby losing their ore-bearing ability before reaching the surface. Mineral systems function as chemical buffers and indicators just as buffers and indicators function in a chemical laboratory. By reading the record written in the buffer/indicator assemblages of minerals one can reconstruct many aspects of the former chemical environment. By studying the record of changing conditions one may deduce information regarding the processes functioning to create the succession of chemical environments and the ore deposits they represent. The example of the OH vein at Creede, Colorado, shows a pH buffered by the K-feldspar + muscovite + quartz assemblage and the covariation of S2 and O2 buffered by the assemblage chlorite + pyrite + quartz. Boiling of the ore fluid led to its oxidation to hematite-bearing assemblages and simultaneously produced an intensely altered, sericitic capping over the vein in response to the condensation of vapors bearing acidic components. The solubility of metals as calculated from experimental and theoretical studies of mineral solubility appears too low by at least one or two powers of ten to explain the mineralization at Creede. In contrast to Creede where the mineral stabilities all point to a relatively consistent chemistry, the Mississippi Valley type deposits present a puzzle of conflicting chemical clues that are impossible to reconcile with any single equilibrium situation. Thus we must

  1. Chemical weathering within high mountain depositional structures

    NASA Astrophysics Data System (ADS)

    Emberson, R.; Hovius, N.; Hsieh, M.; Galy, A.

    2013-12-01

    Material eroded from active mountain belts can spend extended periods in depositional structures within the mountain catchments before reaching its final destination. This can be in the form of colluvial fills, debris fans, or alluvial valley fills and terraces. The existence of these landforms is testament to the catastrophic nature of the events that lead to their formation. Sourced by landslides or debris flows, the material that forms them is in many cases either unweathered or incompletely weathered (e.g. Hsieh and Chyi 2010). Due to their porosity and permeability, these deposits likely serve as locations for extensive chemical weathering within bedrock landscapes. Recent studies considering the weathering flux from active mountain belts (e.g. Calmels et al. 2011) have distinguished between shallow and deep groundwater in terms of the contribution to the solute budget from a catchment; in this study we have attempted to more tightly constrain the sources of these groundwater components in the context of the previously mentioned depositional structures. We have collected water samples from a large number of sites within the Chen-you-lan catchment (370 km2) in central west Taiwan to elucidate the location of chemical weathering as well as how the sourcing of weathering products varies depending on the meteorological conditions. Central Taiwan has good attributes for this work considering both the extremely active tectonics and tropical climate, (including extensive cyclonic activity) which stimulate both extensive physical erosion (Dadson et al. 2003) and chemical weathering (Calmels et al. 2011). The Chen-you-lan catchment in particular contains some of the largest alluvial deposits inside the Taiwan mountain belt (Hsieh and Chyi 2010). Our preliminary results suggest that weathering within intramontane deposits may be a significant source of solutes, with the hyporheic systems within mountain rivers of particular import. This input of solutes occurs over

  2. Chemical vapor deposition of copper films

    NASA Astrophysics Data System (ADS)

    Borgharkar, Narendra Shamkant

    We have studied the kinetics of copper chemical vapor deposition (CVD) for interconnect metallization using hydrogen (Hsb2) reduction of the Cu(hfac)sb2 (copper(II) hexafluoroacetylacetonate) precursor. Steady-state deposition rates were measured using a hot-wall microbalance reactor. For base case conditions of 2 Torr Cu(hfac)sb2, 40 Torr Hsb2, and 300sp°C, a growth rate of 0.5 mg cmsp{-2} hrsp{-1} (ca. 10 nm minsp{-1}) is observed. Reaction order experiments suggest that the deposition rate passes through a maximum at partial pressure of 2 Torr of Cu(hfac)sb2. The deposition rate has an overall half-order dependence on Hsb2 partial pressure. A Langmuir-Hinshelwood rate expression is used to describe the observed kinetic dependencies on Cu(hfac)sb2, Hsb2, and H(hfac). Based on the rate expression a mechanism is proposed in which the overall rate is determined by the surface reaction of adsorbed Cu(hfac)sb2 and H species. Additionally, the role of alcohols in enhancing the deposition rate has been investigated. Addition of isopropanol results in a six fold enhancement to yield a deposition rate of 3.3 mg cmsp{-2} hrsp{-1} (ca. 60 nm minsp{-1}) at 5 Torr of isopropanol, 0.4 Torr Cu(hfac)sb2, 40 Torr Hsb2, and 300sp°C. Ethanol and methanol give lower enhancements of 1.75 and 1.1 mg cmsp{-2} hrsp{-1}, respectively. A mechanism based on the ordering of the aqueous pKsba values of the alcohols is proposed to explain the observed results. Lastly, we have built a warm-wall Pedestal reactor apparatus to demonstrate copper CVD on TiN/Si substrates. The apparatus includes a liquid injection system for transport of isopropanol-diluted precursor solutions. At optimized conditions of precursor and substrate pre-treatments, we have deposited uniform films of copper on TiN/Si substrates at an average deposition rate of 3.0 mg cmsp{-2} hrsp{-1} (ca. 60 nm minsp{-1}).

  3. Preventing Chemical-Vapor Deposition In Selected Areas

    NASA Technical Reports Server (NTRS)

    Keeley, Joseph T.; Goela, Jitendra Singh; Pickering, Michael A.; Taylor, Raymond L.

    1991-01-01

    Method for prevention of chemical-vapor deposition of material in selected areas developed. Gas shroud isolates specific area from rest of deposition system. Inert gas flowing from beneath substrate prevents deposition between substrate and outer ring. Method extremely successful in selective deposition of SiC in chemical-vapor-deposition reactor. Used in deposition of SiC mirror blanks in Large Mirror Substrate and Lidar Mirror programs. Critical element in overall chemical-vapor-deposition process for producing large, lightweight mirrors.

  4. Chemical Vapor Deposition Of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

    1993-01-01

    Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

  5. Characterization of Metalorganic Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Jesser, W. A.

    1998-01-01

    A series of experimental and numerical investigations to develop a more complete understanding of the reactive fluid dynamics of chemical vapor deposition were conducted. In the experimental phases of the effort, a horizontal CVD reactor configuration was used for the growth of InP at UVA and for laser velocimetry measurements of the flow fields in the reactor at LaRC. This horizontal reactor configuration was developed for the growth of III-V semiconductors and has been used by our research group in the past to study the deposition of both GaAs and InP. While the ultimate resolution of many of the heat and mass transport issues will require access to a reduced-gravity environment, the series of groundbased research makes direct contributions to this area while attempting to answer the design questions for future experiments of how low must gravity be reduced and for how long must this gravity level be maintained to make the necessary measurements. It is hoped that the terrestrial experiments will be useful for the design of future microgravity experiments which likely will be designed to employ a core set of measurements for applications in the microgravity environment such as HOLOC, the Fluid Physics/Dynamics Facility, or the Schlieren photography, the Laser Imaging Velocimetry and the Laser Doppler Velocimetry instruments under development for the Advanced Fluids Experiment Module.

  6. Conductive Perovskite-type Metal Oxide Thin Films Prepared by Chemical Solution Deposition Technique

    NASA Astrophysics Data System (ADS)

    Sasajima, K.; Uchida, H.

    2011-10-01

    Metal oxide electrode have been widely developed for high-performance electric device because they possess some attractive characteristic such as thermal/chemical stabilities and change compensation for oxygen vacancies in interconnected dielectric layers, etc., which is often hardly achieved by convention metal electrodes. As almost all metal oxide electrodes were usually fabricated by some vapour deposition techniques which require large-scale equipments, power, resources and costs, film deposition via solution technique would be worthy for familiarizing the metal oxide electrodes. In this research, thin films of conductive perovskite-type oxides, (La,Sr)CoO3 [LSCO], were fabricated by chemical solution deposition technique. The precursor solution for LSCO was prepared using metal nitrate, acetates, and iso-propoxide and 2-methoxyethanol. The solution was spin-coated on substrates, followed by drying, pyrolysis and RTA-treatment for crystallization at 500-750°C, for 5 min in air. These processes were repeated to obtain desired film thickness. (100)Si and (100)SrTiO3 were used as substrate. XRD analysis indicated that both of LSCO films fabricated on (100)SrTiO3 and (100)Si substrates were crystallized at and above 600°C. The films on (100)SrTiO3 had preferential crystal orientation of (100)LSCO normal to the substrate surface, while random crystal orientation was confirmed for the films on (100)Si. Electrical resistivity of the both films fabricated at 700°C were 6.09 × 10-5 Ω cm and 1.12 × 10-4 Ω cm, respectively, which is almost same as the LSCO films fabricated by conventional vapour deposition technique.

  7. Surface chemical deposition of advanced electronic materials

    NASA Astrophysics Data System (ADS)

    Bjelkevig, Cameron

    The focus of this work was to examine the direct plating of Cu on Ru diffusion barriers for use in interconnect technology and the substrate mediated growth of graphene on boron nitride for use in advanced electronic applications. The electrodeposition of Cu on Ru(0001) and polycrystalline substrates (with and without pretreatment in an iodine containing solution) has been studied by cyclic voltammetry (CV), current--time transient measurements (CTT), in situ electrochemical atomic force microscopy (EC-AFM), and X-ray photoelectron spectroscopy (XPS). The EC-AFM data show that at potentials near the OPD/UPD threshold, Cu crystallites exhibit pronounced growth anisotropy, with lateral dimensions greatly exceeding vertical dimensions. XPS measurements confirmed the presence and stability of adsorbed I on the Ru surface following pre-treatment in a KI/H2SO4 solution and following polarization to at least -200 mV vs. Ag/AgCl. CV data of samples pre-reduced in I-containing electrolyte exhibited a narrow Cu deposition peak in the overpotential region and a UPD peak. The kinetics of the electrodeposited Cu films was investigated by CTT measurements and applied to theoretical models of nucleation. The data indicated that a protective I adlayer may be deposited on an airexposed Ru electrode as the oxide surface is electrochemically reduced, and that this layer will inhibit reformation of an oxide during the Cu electroplating process. A novel method for epitaxial graphene growth directly on a dielectric substrate of systematically variable thickness was studied. Mono/multilayers of BN(111) were grown on Ru(0001) by atomic layer deposition (ALD), exhibiting a flat (non-nanomesh) R30(✓3x✓3) structure. BN(111) was used as a template for growth of graphene by chemical vapor deposition (CVD) of C2H4 at 1000 K. Characterization by LEED, Auger, STM/STS and Raman indicate the graphene is in registry with the BN substrate, and exhibits a HOPG-like 0 eV bandgap density

  8. High-performance perovskite CH3NH3PbI3 thin films for solar cells prepared by single-source physical vapour deposition

    NASA Astrophysics Data System (ADS)

    Fan, Ping; Gu, Di; Liang, Guang-Xing; Luo, Jing-Ting; Chen, Ju-Long; Zheng, Zhuang-Hao; Zhang, Dong-Ping

    2016-07-01

    In this work, an alternative route to fabricating high-quality CH3NH3PbI3 thin films is proposed. Single-source physical vapour deposition (SSPVD) without a post-heat-treating process was used to prepare CH3NH3PbI3 thin films at room temperature. This new process enabled complete surface coverage and moisture stability in a non-vacuum solution. Moreover, the challenges of simultaneously controlling evaporation processes of the organic and inorganic sources via dual-source vapour evaporation and the heating process required to obtain high crystallization were avoided. Excellent composition with stoichiometry transferred from the powder material, a high level of tetragonal phase-purity, full surface coverage, well-defined grain structure, high crystallization and reproducibility were obtained. A PCE of approximately 10.90% was obtained with a device based on SSPVD CH3NH3PbI3. These initial results suggest that SSPVD is a promising method to significantly optimize perovskite CH3NH3PbI3 solar cell efficiency.

  9. High-performance perovskite CH3NH3PbI3 thin films for solar cells prepared by single-source physical vapour deposition.

    PubMed

    Fan, Ping; Gu, Di; Liang, Guang-Xing; Luo, Jing-Ting; Chen, Ju-Long; Zheng, Zhuang-Hao; Zhang, Dong-Ping

    2016-01-01

    In this work, an alternative route to fabricating high-quality CH3NH3PbI3 thin films is proposed. Single-source physical vapour deposition (SSPVD) without a post-heat-treating process was used to prepare CH3NH3PbI3 thin films at room temperature. This new process enabled complete surface coverage and moisture stability in a non-vacuum solution. Moreover, the challenges of simultaneously controlling evaporation processes of the organic and inorganic sources via dual-source vapour evaporation and the heating process required to obtain high crystallization were avoided. Excellent composition with stoichiometry transferred from the powder material, a high level of tetragonal phase-purity, full surface coverage, well-defined grain structure, high crystallization and reproducibility were obtained. A PCE of approximately 10.90% was obtained with a device based on SSPVD CH3NH3PbI3. These initial results suggest that SSPVD is a promising method to significantly optimize perovskite CH3NH3PbI3 solar cell efficiency. PMID:27426686

  10. High-performance perovskite CH3NH3PbI3 thin films for solar cells prepared by single-source physical vapour deposition

    PubMed Central

    Fan, Ping; Gu, Di; Liang, Guang-Xing; Luo, Jing-Ting; Chen, Ju-Long; Zheng, Zhuang-Hao; Zhang, Dong-Ping

    2016-01-01

    In this work, an alternative route to fabricating high-quality CH3NH3PbI3 thin films is proposed. Single-source physical vapour deposition (SSPVD) without a post-heat-treating process was used to prepare CH3NH3PbI3 thin films at room temperature. This new process enabled complete surface coverage and moisture stability in a non-vacuum solution. Moreover, the challenges of simultaneously controlling evaporation processes of the organic and inorganic sources via dual-source vapour evaporation and the heating process required to obtain high crystallization were avoided. Excellent composition with stoichiometry transferred from the powder material, a high level of tetragonal phase-purity, full surface coverage, well-defined grain structure, high crystallization and reproducibility were obtained. A PCE of approximately 10.90% was obtained with a device based on SSPVD CH3NH3PbI3. These initial results suggest that SSPVD is a promising method to significantly optimize perovskite CH3NH3PbI3 solar cell efficiency. PMID:27426686

  11. Silicon carbide for mirrors by plasma enhanced chemical vapour deposition at low temperature

    NASA Astrophysics Data System (ADS)

    Novi, A.; Taglioni, G.; Novella, L.; Citterio, O.; Ghigo, M.

    2004-06-01

    A new technology is under development to grow layers of amorphous Silicon Carbide in vacuum at temperatures below 200°C by PE-CVD technology. The layers can be used either to improve the surface quality of mirror substrates, as a polishable cladding coating, or to form self-sustaining thin mirrors in SiC. The former application is useful in particular for the coating of some varieties of SiC materials that are not well polishable or that have high residual porosity, thus obtaining good CTE matching with the substrates. The latter application is very promising to get ultra-thin mirrors by replica, by growing layers of some tenths of millimetre on an optically polished master. The paper presents the preliminary results obtained with the two mentioned possible uses of the PE-CVD SiC process.

  12. Controlled growth of large area multilayer graphene on copper by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Kaya, Ismet I.; Kasap, Sibel; Khaksaran, Hadi; Celik, Suleyman; Ozkaya, Hasan; Yanik, Cenk; Faculty of Engineering; Natural Sciences Team; Nanotechnology Research; Application Center Team

    2015-03-01

    The growth of multilayer graphene on the surface of a copper foil is studied experimentally. It has been shown that the average film thickness can be controlled by the growth time with a linear trend and the growth can be extended until nearly full coverage of multilayer graphene over the copper surface. It is observed that the impurity particles on the copper surface mediate the multilayer growth. The formation of large multilayer islands is explained by a qualitative model which takes into account the interplay between the length scales governed by the molecular mean free path of gas molecules and the distribution of the impurities.

  13. Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics

    PubMed Central

    Qi, Junjie; Lan, Yann-Wen; Stieg, Adam Z.; Chen, Jyun-Hong; Zhong, Yuan-Liang; Li, Lain-Jong; Chen, Chii-Dong; Zhang, Yue; Wang, Kang L.

    2015-01-01

    High-performance piezoelectricity in monolayer semiconducting transition metal dichalcogenides is highly desirable for the development of nanosensors, piezotronics and photo-piezotransistors. Here we report the experimental study of the theoretically predicted piezoelectric effect in triangle monolayer MoS2 devices under isotropic mechanical deformation. The experimental observation indicates that the conductivity of MoS2 devices can be actively modulated by the piezoelectric charge polarization-induced built-in electric field under strain variation. These polarization charges alter the Schottky barrier height on both contacts, resulting in a barrier height increase with increasing compressive strain and decrease with increasing tensile strain. The underlying mechanism of strain-induced in-plane charge polarization is proposed and discussed using energy band diagrams. In addition, a new type of MoS2 strain/force sensor built using a monolayer MoS2 triangle is also demonstrated. Our results provide evidence for strain-gating monolayer MoS2 piezotronics, a promising avenue for achieving augmented functionalities in next-generation electronic and mechanical–electronic nanodevices. PMID:26109177

  14. Metalorganic chemical vapour deposition of junction isolated GaAlAs/GaAs LED structures

    NASA Astrophysics Data System (ADS)

    Bradley, R. R.; Ash, R. M.; Forbes, N. W.; Griffiths, R. J. M.; Jebb, D. P.

    1986-09-01

    A low-cost high-radiance Ga(1-x)Al(x)As/GaAs LED has been developed using p-n junction isolation to achieve current confinement in an inverted Burrus LED structure. Using this structure devices with a high internal quantum efficiency of 87 percent which launch up to 1.5 mW into 200-micron, 0.3 nA fiber at 150 mA and have rise and fall times of less than 5 ns, have been fabricated. The LED structure involved a two-stage growth process in which initially an n-type isolation layer was grown on a p-type substrate, followed by infill growth, through contact holes, of the inverted LED structure. This paper will describe in detail the growth and preparation of the optimized junction isolated LED structure, including growth rate and composition control, layer uniformity and deliberate interface grading. Exploration of the use of magnesium doping and triethylaluminum for precise control of active layer doping and composition will be discussed, and finally details of device characteristics and performance are presented.

  15. Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?

    SciTech Connect

    Podhorodecki, A. Golacki, L. W.; Zatryb, G.; Misiewicz, J.; Wang, J.; Jadwisienczak, W.; Fedus, K.

    2014-04-14

    In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.

  16. Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Golacki, L. W.; Zatryb, G.; Misiewicz, J.; Wang, J.; Jadwisienczak, W.; Fedus, K.; Wojcik, J.; Wilson, P. R. J.; Mascher, P.

    2014-04-01

    In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.

  17. Diameter and wall number control of carbon nanotubes by chemical vapor deposition

    SciTech Connect

    Xie, Rongsi; Zhong, Guofang Zhang, Can; Chen, Bingan; Santiago Esconjauregui, C.; Robertson, John

    2013-12-28

    We analyze the relationship between the average wall number (N) and the diameter (d) for carbon nanotubes (CNTs) grown by chemical vapour deposition. It is found that N depends linearly on d for diameters in the range of 2.5–10 nm, while single wall nanotubes predominate for diameters under about 2.1 nm. The linear relationship is found to depend somewhat on the growth conditions. It is also verified that the mean diameter depends on the diameter of the originating catalyst nanoparticle, and thus on the initial catalyst thickness where a thin film catalyst is used. This simplifies the characterisation of CNTs by electron microscopy. We also find a linear relationship between nanotube diameter and initial catalyst film thickness.

  18. Graphene decorated microelectrodes for simultaneous detection of ascorbic, dopamine, and folic acids by means of chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Namdar, N.; Hassanpour Amiri, M.; Dehghan Nayeri, F.; Gholizadeh, A.; Mohajerzadeh, S.

    2015-09-01

    In this paper, high quality and large area graphene layers were synthesized using thermal chemical vapour deposition on copper foil substrates. We use graphene incorporated electrodes to measure simultaneously ascorbic acid, dopamine and folic acid. Cyclic voltammetry and differential pulse voltammetry methods were used to evaluate electrochemical behaviour of the grown graphene layers. The graphene-modified electrode shows large electrochemical potential difference compared to bare gold electrodes with higher current responses. Also our fabricated electrodes configuration can be used easily for microfluidic analysis.

  19. Physical vapour deposition growth and transmission electron microscopy characterization of epitaxial thin metal films on single-crystal Si and Ge substrates

    NASA Astrophysics Data System (ADS)

    Westmacott, K. H.; Hinderberger, S.; Dahmen, U.

    2001-06-01

    Epitaxial fcc, bcc and hcp metal and alloy films were grown in high vacuum by physical vapour deposition at high rate ('flash' deposition) on the (111), (110) and (100) surfaces of Si and Ge at different deposition temperatures. The resulting epitaxial relationships and morphological features of these films were characterized by transmission electron microscopy and diffraction. Simple epitaxial relationships were found mainly for the fcc metals that form binary eutectic systems with Si and G e. Of these, Ag exhibited exceptional behaviour by forming in a single crystal cube-cube relationship on all six semiconductor surfaces. Al and Au both formed bicrystal films on (100) substrates but differed in their behaviours on (111) substrates. Silicide formers such as the fcc metals Cu and Ni, as well as all bcc and hcp metals investigated, did not adopt epitaxial relationships on most semiconductor substrates. However, epitaxial single-crystal, bicrystal and tricrystal films of several metals and alloys could be grown by using a Ag buffer layer. The factors controlling the epitaxial growth of metal films are discussed in the light of the observations and compared with the predictions of established models for epitaxial relationships. It is concluded that epitaxial films can be grown easily if the film forms a simple eutectic or monotectic system with the substrate. The epitaxial relationships of those films depend on crystallographic factors for metal-metal epitaxy and on the substrate surface structure for metal-semiconductor epitaxy.

  20. Vapour breakthrough behaviour of carbon tetrachloride - A simulant for chemical warfare agent on ASZMT carbon: A comparative study with whetlerite carbon

    NASA Astrophysics Data System (ADS)

    Srivastava, Avanish Kumar; Shah, Dilip K.; Mahato, T. H.; Roy, A.; Yadav, S. S.; Srivas, S. K.; Singh, Beer

    2013-06-01

    ASZMT and whetlerite carbon was prepared by impregnation of active carbon with ammonical salts of Cu (II), Ag (I), Zn (II), Mo (VI), TEDA and Cu (II), Ag (I), Cr (VI), NaOH, C5H5N respectively using incipient wetness technique. Thereafter, impregnated carbon systems were characterized using scanning electron microscopy, energy dispersive X-ray, atomic absorption spectroscopy, thermogravimetry and surface characterization techniques. Impregnated carbon systems were evaluated under dynamic conditions against carbon tetrachloride (CCl4) vapour that was used as a simulant for the persistent chemical warfare agents for testing breakthrough times of filter cartridges and canisters of gas masks in the national approval test of respirators. The protective potential of ASZMT carbon was compared with the whetlerite carbon which is presently used in NBC filtration system. The effect of CCl4 concentration, test flow rate, temperature and relative humidity on the breakthrough behaviour of the impregnated carbon systems has also been studied. The study clearly indicated that the whetlerite carbon possessed breakthrough time greater than ASZMT carbon. However, ASZMT carbon provided adequate protection against CCl4 vapours and can be used as an alternative to whetlerite carbon that contain Cr(VI), which is reported to be carcinogenic and having lesser shelf life. The study indicated the breakthrough time of impregnated carbon systems were found to decrease with the increase of the CCl4 concentration and flow rate. The variation in temperature and relative humidity did not significantly affect the breakthrough behaviour of impregnated carbon systems at high vapour concentration of CCl4 whereasbreak through time of impregnated carbon systems reduced by an increase of relative humidity at low CCl4 vapour concentration.

  1. Chemical vapor deposition of graphene single crystals.

    PubMed

    Yan, Zheng; Peng, Zhiwei; Tour, James M

    2014-04-15

    As a two-dimensional (2D) sp(2)-bonded carbon allotrope, graphene has attracted enormous interest over the past decade due to its unique properties, such as ultrahigh electron mobility, uniform broadband optical absorption and high tensile strength. In the initial research, graphene was isolated from natural graphite, and limited to small sizes and low yields. Recently developed chemical vapor deposition (CVD) techniques have emerged as an important method for the scalable production of large-size and high-quality graphene for various applications. However, CVD-derived graphene is polycrystalline and demonstrates degraded properties induced by grain boundaries. Thus, the next critical step of graphene growth relies on the synthesis of large graphene single crystals. In this Account, we first discuss graphene grain boundaries and their influence on graphene's properties. Mechanical and electrical behaviors of CVD-derived polycrystalline graphene are greatly reduced when compared to that of exfoliated graphene. We then review four representative pathways of pretreating Cu substrates to make millimeter-sized monolayer graphene grains: electrochemical polishing and high-pressure annealing of Cu substrate, adding of additional Cu enclosures, melting and resolidfying Cu substrates, and oxygen-rich Cu substrates. Due to these pretreatments, the nucleation site density on Cu substrates is greatly reduced, resulting in hexagonal-shaped graphene grains that show increased grain domain size and comparable electrical properties as to exfoliated graphene. Also, the properties of graphene can be engineered by its shape, thickness and spatial structure. Thus, we further discuss recently developed methods of making graphene grains with special spatial structures, including snowflakes, six-lobed flowers, pyramids and hexagonal graphene onion rings. The fundamental growth mechanism and practical applications of these well-shaped graphene structures should be interesting topics and

  2. Chemical vapor deposition of aluminum oxide

    DOEpatents

    Gordon, Roy; Kramer, Keith; Liu, Xinye

    2000-01-01

    An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

  3. Chemical Vapor Deposition of Silicon from Silane Pyrolysis

    NASA Technical Reports Server (NTRS)

    Praturi, A. K.; Lutwack, R.; Hsu, G.

    1977-01-01

    The four basic elements in the chemical vapor deposition (CVD) of silicon from silane are analytically treated from a kinetic standpoint. These elements are mass transport of silane, pyrolysis of silane, nucleation of silicon, and silicon crystal growth. Rate expressions that describe the various steps involved in the chemical vapor deposition of silicon were derived from elementary principles. Applications of the rate expressions for modeling and simulation of the silicon CVD are discussed.

  4. Chemical vapor deposition for automatic processing of integrated circuits

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1980-01-01

    Chemical vapor deposition for automatic processing of integrated circuits including the wafer carrier and loading from a receiving air track into automatic furnaces and unloading on to a sending air track is discussed. Passivation using electron beam deposited quartz is also considered.

  5. Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

    NASA Astrophysics Data System (ADS)

    Chung, Ting Fung; Shen, Tian; Cao, Helin; Jauregui, Luis A.; Wu, Wei; Yu, Qingkai; Newell, David; Chen, Yong P.

    2013-04-01

    The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interest. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapor deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this paper, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapor deposition. We also discuss potential applications of such large-scale synthetic graphene.

  6. Chemical characterization of combustion deposits by TOF-SIMS

    NASA Astrophysics Data System (ADS)

    Sjövall, P.; Lausmaa, J.; Tullin, C.; Högberg, J.

    2003-01-01

    We have investigated the potential usefulness of TOF-SIMS for chemical analysis of deposits formed in combustion reactors. By using TOF-SIMS, it was possible to (i) identify inorganic chemical compounds in the deposits, (ii) semi-quantitatively estimate the relative concentrations of the main constituents and (iii) obtain images showing the lateral distribution of the main constituents, on the surface and in cross-sections of deposit samples. It was found that the main components in the deposit samples were KCl and K 2SO 4, while K 2CO 3, NaCl, Na 2SO 4, Ca(OH) 2 and CaCl 2 were present in smaller concentrations. In addition, deposits from combustion of recycled wood chips contained considerable amounts of ZnCl 2, PbCl 2, ZnO and PbO. Large variations in the chemical composition were observed for different samples and throughout the cross-section of a single sample. The chlorides, in particular NaCl, were present mainly as particles, while the sulfates were more homogeneously distributed in the deposit. The results from this study show that TOF-SIMS analysis of combustion deposits can contribute significantly to an increased understanding of the formation and growth of deposits in combustion reactors.

  7. Chemical vapor deposition of amorphous semiconductor films. Final subcontract report

    SciTech Connect

    Rocheleau, R.E.

    1984-12-01

    Chemical vapor deposition (CVD) from higher order silanes has been studied for fabricating amorphous hydrogenated silicon thin-film solar cells. Intrinsic and doped a-Si:H films were deposited in a reduced-pressure, tubular-flow reactor, using disilane feed-gas. Conditions for depositing intrinsic films at growth rates up to 10 A/s were identified. Electrical and optical properties, including dark conductivity, photoconductivity, activation energy, optical absorption, band-gap and sub-band-gap absorption properties of CVD intrinsic material were characterized. Parameter space for depositing intrinsic and doped films, suitable for device analysis, was identified.

  8. Chemical Vapor Deposition of Turbine Thermal Barrier Coatings

    NASA Technical Reports Server (NTRS)

    Haven, Victor E.

    1999-01-01

    Ceramic thermal barrier coatings extend the operating temperature range of actively cooled gas turbine components, therefore increasing thermal efficiency. Performance and lifetime of existing ceram ic coatings are limited by spallation during heating and cooling cycles. Spallation of the ceramic is a function of its microstructure, which is determined by the deposition method. This research is investigating metalorganic chemical vapor deposition (MOCVD) of yttria stabilized zirconia to improve performance and reduce costs relative to electron beam physical vapor deposition. Coatings are deposited in an induction-heated, low-pressure reactor at 10 microns per hour. The coating's composition, structure, and response to the turbine environment will be characterized.

  9. Polycyclic organic material (POM) in urban air. Fractionation, chemical analysis and genotoxicity of particulate and vapour phases in an industrial town in Finland

    NASA Astrophysics Data System (ADS)

    Pyysalo, Heikki; Tuominen, Jari; Wickström, Kim; Skyttä, Eija; Tikkanen, Leena; Salomaa, Sisko; Sorsa, Marja; Nurmela, Tuomo; Mattila, Tiina; Pohjola, Veijo

    Polycyclic organic material (POM) was collected by high-volume sampling on filter and on XAD-2 resin from the air of a small industrial town in Finland. Concurrent chemical analysis and the assays for genotoxic activity were performed on the particulate and the vapour phases of ambient air POM and their chemical fractions. Furthermore, correlations between seasonal meteorological parameters and POM concentrations were studied to reveal characteristic POM profiles for various emission sources. The range of total POM concentrations varied from 115 to 380 ng m -3 in late spring and from 17 to 83 ng m -3 in early winter. No direct correlation of ambient POM was seen with the temperature, but rather with the wind direction from various emission sources. Especially the low molecular weight compounds were associated with wind direction from industrial sources. Genotoxic activity, as detected by the Ames Salmonella/microsome test and the SCE assay in CHO cells, was found not only in the paniculate phase samples but also in the vapour phase. The polar fractions of some of the samples showed genotoxic activity, and also direct mutagenicity was observed with both the assay systems; these facts support the significance of compounds other than conventional polycyclic aromatic hydrocarbons (PAH) in the samples.

  10. Structural and environmental dependence of superlow friction in ion vapour-deposited a-C : H : Si films for solid lubrication application

    NASA Astrophysics Data System (ADS)

    Chen, Xinchun; Kato, Takahisa; Kawaguchi, Masahiro; Nosaka, Masataka; Choi, Junho

    2013-06-01

    Understanding the tribochemical interaction of water molecules in humid environment with carbonaceous film surfaces, especially hydrophilic surface, is fundamental for applications in tribology and solid lubrication. This paper highlights some experimental evidence to elucidate the structural and environmental dependence of ultralow or even superlow friction in ion vapour-deposited a-C : H : Si films. The results indicate that both surface density of silicon hydroxyl group (Si-OH) and humidity level (RH) determine the frictional performance of a-C : H : Si films. Ultralow friction coefficient μ (˜0.01-0.055) is feasible in a wide range of RH. The dissociative formation of hydrophilic Si-OH surface and the following nanostructure of interfacial water molecules under contact pressure are the origin of ultralow friction for a-C : H : Si films in humid environment. The correlation between contact pressure and friction coefficient derived from Hertzian contact model is not valid in the present case. Under this nanoscale boundary lubrication, the friction coefficient tends to increase as the contact pressure increases. There even exists a contact pressure threshold for the transition from ultralow to superlow friction (μ ˜ 0.007). In comparison, when tribotested in dry N2, the observed superlow friction (μ ˜ 0.004) in the absence of water is correlated with the formation of a low shear strength tribolayer by wear-induced phase transformation.

  11. Characterization of Vapour Plume Species and Deposition Residues Resulting from Pulsed Laser Ablation of a Graphite/Epoxy Composite

    NASA Astrophysics Data System (ADS)

    Roybal, R. E.; Miglionico, C. J.; Stein, C.; Murr, L. E.; Lincoln, K. A.

    1995-01-01

    A modified time-of-flight mass spectrometer fitted with a special collection stage for carbon-coated transmission electron microscope specimen grids is used to monitor laser-pulse ablation products from graphite/epoxy composite targets. Scanning electron microscopy observations show ablation damage to consist of matrix pyrolysis, fibre fracture and spallation of fragments which include elemental hydrogen, carbon epoxide and acetylene groups. Transmission electron microscope examination of specimen grids showed a variety of crystals and polycrystalline hexagonal graphites having a wide range of shapes including spheres and faceted polyhedra and platelets, textured flake structures, microrosettes. These observations lend some credibility to a model for laser-shock and pyrolysis effects which create molecular plume fragments and deposition fragments of hexagonal graphite.

  12. Chemical vapor deposition of boron-doped hydrogenated amorphous silicon

    SciTech Connect

    Ellis F.B. Jr.; Delahoy, A.E.

    1985-07-15

    Deposition conditions and film properties for a variety of boron-doped hydrogenated amorphous silicon films and silicon-carbon films produced by chemical vapor deposition (CVD) are discussed. Deposition gases include monosilane, disilane, trisilane, and acetylene. Two types of optically wide band-gap p layers are obtained. One of these window p layers (without carbon) has been extensively tested in photovoltaic devices. Remarkably, this p layer can be deposited between about 200 to 300 /sup 0/C. A typical open circuit voltage in an all CVD p-i-n device is 0.70--0.72 V, and in a hybrid device where the i and n layers are deposited by glow discharge, 0.8--0.83 V.

  13. Chemical vapor deposition reactor. [providing uniform film thickness

    NASA Technical Reports Server (NTRS)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  14. Chemical vapor deposition modeling: An assessment of current status

    NASA Technical Reports Server (NTRS)

    Gokoglu, Suleyman A.

    1991-01-01

    The shortcomings of earlier approaches that assumed thermochemical equilibrium and used chemical vapor deposition (CVD) phase diagrams are pointed out. Significant advancements in predictive capabilities due to recent computational developments, especially those for deposition rates controlled by gas phase mass transport, are demonstrated. The importance of using the proper boundary conditions is stressed, and the availability and reliability of gas phase and surface chemical kinetic information are emphasized as the most limiting factors. Future directions for CVD are proposed on the basis of current needs for efficient and effective progress in CVD process design and optimization.

  15. [Chemical composition of deposits on IUD removed from uterus].

    PubMed

    Liu, T Y

    1984-05-01

    An electroprobe is used to analyze the elements and x-ray diffraction technology to determine the crystal structure of deposits on IUDs removed from the uterus, so that the chemical composition of these deposits may be studied. Deposits on a number of copper or stainless steel IUDs are removed and undergo electroprobe analysis, the results of which are compare dwith the results of calcite analysis done using the same method. Several deposit samples are studied using x-ray diffraction technology. The results of the latter study are compared with the results of the x-ray diffraction studies of calcium carbonate and calcite. Both copper and stainless steel IUDs were found to have the same type of deposits, containing traces of cooper, magnesium, potassium, sodium, iron, sulphur, phosphorus, and chlorine. The x-ray diffraction spectrum for these deposits was found to be the same as those of calcium carbonate and calcite (hexagonal crystal). Deposits on stainless steel and copper IUDs were found to be similar to calcite. With the exception of calcium, the other elements are thought to come from amino acid, which is readily combined with calcium carbonate in the uterus. These findings confirm the fact that IUDs cause the presence of more calcium ions in th uterus. 120 copper IUDs place in the uterus from 1 to 7 years and 156 stainless steel IUDs placed in the uterus from 1 month to 19 years were used. The volume of the deposits was so small that electroprobing was the only method which could accurately determine all the chemical elements these deposits contained. PMID:12313205

  16. Chemical vapor deposition of graphene on copper at reduced temperatures

    NASA Astrophysics Data System (ADS)

    Gallo, Eric M.; Willner, Bruce I.; Hwang, Jeonghyun; Sun, Shangzhu; Spencer, Michael; Salagaj, Tom; Mitchel, William C.; Sbrockey, Nick; Tompa, Gary S.

    2012-09-01

    A preliminary study on reduced temperature chemical vapor deposition of graphene on copper substrates was performed. Graphene's exceptional mechanical strength, very high electrical and thermal conductivity, and stability at atomic layer thicknesses, generates potential for a broad range of applications, from nanodevices to transparent conductor to chemical sensor. Of the techniques demonstrated for graphene formation, chemical vapor deposition is the sole process suitable for manufacturing large area films. While large area film deposition of graphene has been shown on metal substrates, this process has been limited to high temperatures, 900-1000C, which increases the cost of production and limits methods of integrating the graphene with other material structures. In this work, CVD of graphene on copper foil was attempted over a range of temperatures (650 - 950C) on substrates as large as 5 x 15 cm in a horizontal tube reactor. Depositions were performed using both CVD and upstream Plasma-Enhanced CVD (PECVD), and the results are compared for both techniques. Quality of graphene films deposited with and without plasma enhancement was characterized by micro Raman spectroscopy.

  17. Chemical-vapor deposition of silicon from silane

    NASA Technical Reports Server (NTRS)

    Hsu, G. C.; Lutwack, R.; Praturi, A. K.

    1979-01-01

    Report lists tables of standard free-energy change, equilibrium constant, and heat of reaction for chemical vapor deposition (CVD) of silicon from silane over temperature range of 100 to 1000 K. Data indicates silicon CVD may be a commercially economical process for production of silicon for solar arrays and other applications.

  18. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  19. A model of silicon carbide chemical vapor deposition

    SciTech Connect

    Allendorf, M.D.; Kee, R.J. )

    1991-03-01

    This paper presents a model describing the interacting gas phase and surface chemistry present during the steady-state chemical vapor deposition (CVD) of silicon carbide (SiC). In this work, the authors treat the case of steady-state deposition of SiC from silane (SiH{sub 4}) and propane (C{sub 3}H{sub 8}) mixtures in hydrogen carrier gas at one atmosphere pressure. Epitaxial deposition is assumed to occur on a pre-existing epitaxial silicon carbide crystal. Pyrolysis of SiH{sub 4} and C{sub 3}H{sub 8} is modeled by 83 elementary gas-phase reactions. A set of 36 reactions of gas- phase species with the surface is used to simulate the deposition process. Rates for the gas/surface reactions were obtained from experimental measurements of sticking coefficients in the literature and theoretical estimates. The authors' results represent the first simulation of a silicon carbide deposition process that includes detailed description of both the gas phase and surface reactions. The chemical reaction mechanism is also combined with a model of a rotating disk reactor (RDR), which is a convenient way to study the interaction of chemical reactions with fluid mechanics. Transport of species from the gas to the surface is accounted for using multicomponent transport properties. Predictions of deposition rates as a function of susceptor temperature, disk rotation rate, and reactant partial pressure are presented. In addition, velocity, temperature, and concentration profiles normal to the heated disk for 41 gas-phase species are determined using reactor conditions typical of epitaxial silicon carbide deposition on silicon substrates.

  20. Modified chemical route for deposition of molybdenum disulphide thin films

    SciTech Connect

    Vyas, Akshay N. Sartale, S. D.

    2014-04-24

    Molybdenum disulphide (MoS{sub 2}) thin films were deposited on quartz substrates using a modified chemical route. Sodium molybdate and sodium sulphide were used as precursors for molybdenum and sulphur respectively. The route involves formation of tetrathiomolybdate ions (MoS{sub 4}{sup 2−}) and further reduction by sodium borohydride to form MoS{sub 2}. The deposition was performed at room temperature. The deposited films were annealed in argon atmosphere at 1073 K for 1 hour to improve its crystallinity. The deposited films were characterized using scanning electron microscopy (SEM) for morphology, UV-Vis absorption spectroscopy for optical studies and X-ray diffraction (XRD) for structure determination.

  1. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    NASA Astrophysics Data System (ADS)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I–V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  2. Physical properties of vapour grown indium monotelluride platelets

    NASA Astrophysics Data System (ADS)

    Kunjomana, A. G.; Chandrasekharan, K. A.; Teena, M.

    2015-02-01

    Indium monotelluride (InTe) crystals were grown from vapour phase under different temperature gradients by employing physical vapour deposition (PVD) method. The morphology of these crystals such as whiskers, needles, platelets etc., strongly depends on the temperature distribution in the horizontal dual zone furnace. InTe platelets were deposited by setting the temperature of the charge (TC) and growth (TS) zones at 1073 K and 773 K (ΔT=300 K), respectively, for different growth periods (24 h, 48 h, 72 h and 96 h). The surface growth features have been analyzed by scanning electron microscopes, which indicate layer growth mechanism for all the crystals. Various crystals grown under ΔT=200 K and 300 K (retaining TS invariant) were examined by X-ray diffraction and elemental analysis. InTe samples exhibited consistent lattice parameters, density and atomic percentage, establishing stoichiometry and chemical homogeneity. The results obtained for Seebeck coefficient, electrical conductivity, power factor, dislocation density and microhardness are found to be reproducible as well. The vapour deposited InTe platelets are mechanically stable and possess high value of TEP, which ensure their practical application in thermoelectric power generation.

  3. Chemically Deposited Thin-Film Solar Cell Materials

    NASA Technical Reports Server (NTRS)

    Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

    2005-01-01

    We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

  4. Chemical vapor deposition and atomic layer deposition of metal oxide and nitride thin films

    NASA Astrophysics Data System (ADS)

    Barton, Jeffrey Thomas

    Processes for depositing thin films with various electronic, optical, mechanical, and chemical properties are indispensable in many industries today. Of the many deposition methods available, chemical vapor deposition (CVD) has proved over time to be one of the most flexible, efficient, and cost-effective. Atomic layer deposition (ALD) is a newer process that is gaining favor as a method for depositing films with excellent properties and unparalleled precision. This work describes the development of novel CVD and ALD processes to deposit a variety of materials. Hafnium oxide and zirconium oxide show promise as replacements for SiO 2 as gate dielectrics in future-generation transistors. These high-k materials would provide sufficient capacitance with layers thick enough to avoid leakage from tunneling. An ALD method is presented here for depositing conformal hafnium oxide from tetrakis-(diethylamido)hafnium and oxygen gas. A CVD method for depositing zirconium oxide from tetrakis-(dialkylamido)zirconium and either oxygen gas or water vapor is also described. The use of copper for interconnects in integrated circuits requires improved diffusion barrier materials, given its high diffusivity compared to the previously-used aluminum and tungsten. Tungsten nitride has a low resistivity among barrier materials, and can be deposited in amorphous films that are effective diffusion barriers in layers as thin as a few nanometers. Here we demonstrate CVD and plasma-enhanced CVD methods to deposit tungsten nitride films from bis-(dialkylamido)bis-( tert-butylimido)tungsten precursors and ammonia gas. Recent findings had shown uniform copper growth on tantalum silicate films, without the dewetting that usually occurs on oxide surfaces. Tantalum and tungsten silicates were deposited by a CVD reaction from the reaction of either tris-(diethylamido)ethylimido tantalum or bis-(ethylmethylamido)-bis-( tert-butylimido)tungsten with tris-(tert-butoxy)silanol. The ability of evaporated

  5. Fundamental studies of chemical vapor deposition diamond growth processes

    SciTech Connect

    Shaw, R.W.; Whitten, W.B.; Ramsey, J.M.; Heatherly, L.

    1991-01-01

    We are developing laser spectroscopic techniques to foster a fundamental understanding of diamond film growth by hot filament chemical vapor deposition (CVD). Several spectroscopic techniques are under investigation to identify intermediate species present in the bulk reactor volume, the thin active volume immediately above the growing film, and the actual growing surface. Such a comprehensive examination of the overall deposition process is necessary because a combination of gas phase and surface chemistry is probably operating. Resonantly enhanced multiphoton ionization (REMPI) techniques have been emphasized. A growth rector that permits through-the-substrate gas sampling for REMPI/time-of-flight mass spectroscopy has been developed. 7 refs., 2 figs.

  6. Combustion chemical vapor deposited coatings for thermal barrier coating systems

    SciTech Connect

    Hampikian, J.M.; Carter, W.B.

    1995-12-31

    The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings. In this report, the evaluation of alumina and ceria coatings on a nickel-chromium alloy is described.

  7. Chemical and Magnetic Order in Vapor-Deposited Metal Films

    NASA Astrophysics Data System (ADS)

    Rooney, Peter Wiliam

    1995-01-01

    A stochastic Monte Carlo model of vapor deposition and growth of a crystalline, binary, A_3 B metallic alloy with a negative energy of mixing has been developed which incorporates deposition and surface diffusion in a physically correct manner and allows the simulation of deposition rates that are experimentally realizable. The effects of deposition rate and growth temperature on the development of short range order (SRO) in vapor-deposited films have been examined using this model. SRO in the simulated films increases with growth temperature up to the point at which the temperature corresponds to the energy of mixing, but we see no corresponding development of anisotropic SRO (preferential ordering of A-B pairs along the growth direction). Epitaxial (100) and (111) CoPt_3 films have been deposited over a range of growth temperatures from -50^circ C to 800^circC. Curie temperature (T_{rm c}) and saturation magnetization are dramatically enhanced in those films grown near 400^circ C over the values expected for the chemically homogeneous alloy. Magnetization data indicates that the high T _{rm c} films are inhomogeneous. These phenomena are interpreted as evidence of a previously unobserved magnetically driven miscibility gap in the Co-Pt phase diagram. Films grown near 400^circ C exhibit large uniaxial perpendicular magnetic anisotropy that cannot be accounted for by strain. The observed anisotropy coincides with the chemical phase separation and it seems likely that these two phenomena are related. Long range order (LRO) in the as-deposited films peaks at a growth temperature of 630^circC and then decreases with decreasing growth temperature. The decrease in LRO is either due to kinetic frustration or to competition from magnetically induced Co clustering. Theoretical phase diagrams based on the appropriate Blume-Emery-Griffiths Hamiltonian suggest the latter.

  8. Development and study of chemical vapor deposited tantalum base alloys

    NASA Technical Reports Server (NTRS)

    Meier, G. H.; Bryant, W. A.

    1976-01-01

    A technique for the chemical vapor deposition of alloys was developed. The process, termed pulsing, involves the periodic injection of reactant gases into a previously-evacuated reaction chamber where they blanket the substrate almost instantaneously. Formation of alternating layers of the alloy components and subsequent homogenization allows the formation of an alloy of uniform composition with the composition being determined by the duration and relative numbers of the various cycles. The technique has been utilized to produce dense alloys of uniform thickness and composition (Ta- 10 wt % W) by depositing alternating layers of Ta and W by the hydrogen reduction of TaCl5 and WCl6. A similar attempt to deposit a Ta - 8 wt % W - 2 wt% Hf alloy was unsuccessful because of the difficulty in reducing HfCl4 at temperatures below those at which gas phase nucleation of Ta and W occurred.

  9. Chemical vapor deposition of hydrogenated amorphous silicon from disilane

    SciTech Connect

    Bogaert, R.J.; Russell, T.W.F.; Klein, M.T. . Dept. of Chemical Engineering); Rocheleau, R.E.; Baron, B.N. . Inst. of Energy Conversion)

    1989-10-01

    The authors describe hydrogenated amorphous silicon (a-Si:H) thin films deposited at growth rates of 1 to 30 A/s by chemical vapor deposition (CVD) from disilane source gas at 24 torr total pressure in a tubular reactor. The effects of substrate temperature and gas holding time (flow rate) on film growth rate and effluent gas composition were measured at temperatures ranging from 360{sup 0} to 485{sup 0}C and gas holding times from 3 to 62s. Effluent gases determined by gas chromatography included silane, disilane and other higher order silanes. A chemical reaction engineering model, based on a silylene (SiH/sub 2/) insertion gas phase reaction network and film growth from both SiH/sub 2/ and high molecular weight silicon species, Si/sub n/H/sub 2n/, was developed. The model predictions were in good agreement with experimentally determined growth rates and effluent gas compositions.

  10. CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED CONDUCTORS

    SciTech Connect

    Paranthaman, Mariappan Parans

    2011-01-01

    We have reviewed briefly the growth of buffer and high temperature superconducting oxide thin films using a chemical solution deposition (CSD) method. In the Rolling-Assisted Biaxially Textured Substrates (RABiTS) process, developed at Oak Ridge National Laboratory, utilizes the thermo mechanical processing to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited epitaxially on the textured nickel alloy substrates. The starting substrate serves as a template for the REBCO layer, which has substantially fewer weak links. Buffer layers play a major role in fabricating the second generation REBCO wire technology. The main purpose of the buffer layers is to provide a smooth, continuous and chemically inert surface for the growth of the REBCO film, while transferring the texture from the substrate to the superconductor layer. To achieve this, the buffer layers need to be epitaxial to the substrate, i.e. they have to nucleate and grow in the same bi-axial texture provided by the textured metal foil. The most commonly used RABiTS multi-layer architectures consist of a starting template of biaxially textured Ni-5 at.% W (Ni-W) substrate with a seed (first) layer of Yttrium Oxide (Y2O3), a barrier (second) layer of Yttria Stabilized Zirconia (YSZ), and a Cerium Oxide (CeO2) cap (third) layer. These three buffer layers are generally deposited using physical vapor deposition (PVD) techniques such as reactive sputtering. On top of the PVD template, REBCO film is then grown by a chemical solution deposition. This article reviews in detail about the list of oxide buffers and superconductor REBCO films grown epitaxially on single crystal and/or biaxially textured Ni-W substrates using a CSD method.

  11. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  12. Chemical vapor deposition coating of fibers using microwave application

    NASA Technical Reports Server (NTRS)

    Barmatz, Martin B. (Inventor); Hoover, Gordon (Inventor); Jackson, Henry W. (Inventor)

    2000-01-01

    Chemical vapor deposition coating is carried out in a cylindrical cavity. The fibers are heated by a microwave source that is uses a TM0N0 mode, where O is an integer, and produces a field that depends substantially only on radius. The fibers are observed to determine their heating, and their position can be adjusted. Once the fibers are uniformly heated, a CVD reagent is added to process the fibers.

  13. Chemical vapor deposition (CVD) of cubic silicon carbide. Patent Application

    SciTech Connect

    Addamiano, A.

    1985-07-02

    This invention relates to the growth of cubic silicon carbide crystals. More specifically, this invention relates to the growth of cubic silicon carbide by Chemical Vapor Deposition (CVD). One object of the present invention is to provide a novel method for the production of cubic SiC for high temperature electronic devices. Another object of the present invention is to provide a novel method for the production of highly pure, single crystal cubic SiC that is duplicable. Another object of the present invention is to provide a novel method for the production of large-area single-crystal wafers of cubic SiC. These and other objects of the present invention can be achieved by a method for chemical vapor deposition (CVD) of cubic Silicon Carbide (SiC) comprising the steps of etching silicon substrated having one mechanically polished face; depositing a thin buffer layer of cubic SiC formed by reaction between a heated Si substrate and a H2-C3H8 gas mixuture; and depositing SiC on the buffer layer at high temperature using H2+C3HY+SiH4 mixture.

  14. Research on chemical vapor deposition processes for advanced ceramic coatings

    NASA Technical Reports Server (NTRS)

    Rosner, Daniel E.

    1993-01-01

    Our interdisciplinary background and fundamentally-oriented studies of the laws governing multi-component chemical vapor deposition (VD), particle deposition (PD), and their interactions, put the Yale University HTCRE Laboratory in a unique position to significantly advance the 'state-of-the-art' of chemical vapor deposition (CVD) R&D. With NASA-Lewis RC financial support, we initiated a program in March of 1988 that has led to the advances described in this report (Section 2) in predicting chemical vapor transport in high temperature systems relevant to the fabrication of refractory ceramic coatings for turbine engine components. This Final Report covers our principal results and activities for the total NASA grant of $190,000. over the 4.67 year period: 1 March 1988-1 November 1992. Since our methods and the technical details are contained in the publications listed (9 Abstracts are given as Appendices) our emphasis here is on broad conclusions/implications and administrative data, including personnel, talks, interactions with industry, and some known applications of our work.

  15. Modeling and Simulation of Plasma Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Smith, Aaron; Bett, Dominic; Cunningham, Monisha; Sen, Sudip

    2015-04-01

    Plasma Enhanced Chemical Vapor Deposition (PECVD) is a process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Recent study from the X-ray diffraction spectra of SnO2 films deposited as a function of RF power apparently indicates that RF power is playing a stabilizing role and hence in the better deposition. The results show that the RF power results in smoother morphology, improved crystallinity, and lower sheet resistance value in the PECVD process. The PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors. In this talk we will address two aspects of the problem, first to develop a model to study the mechanism of how the PECVD is effected by the RF power, and second to actually simulate the effect of RF power on PECVD. As the PECVD is a very important component of the plasma processing technology with many applications in the semiconductor technology and surface science, the research proposed here has the prospect to revolutionize the plasma processing technology through the stabilizing role of the RF power.

  16. Chemical etching and organometallic chemical vapor deposition on varied geometries of GaAs

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Landis, Geoffrey A.; Wilt, David M.

    1989-01-01

    Results of micron-spaced geometries produced by wet chemical etching and subsequent OMCVD growth on various GaAs surfaces are presented. The polar lattice increases the complexity of the process. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher-order planes produced by the hex groove etching.

  17. Mechanical and piezoresistive properties of thin silicon films deposited by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition at low substrate temperatures

    NASA Astrophysics Data System (ADS)

    Gaspar, J.; Gualdino, A.; Lemke, B.; Paul, O.; Chu, V.; Conde, J. P.

    2012-07-01

    This paper reports on the mechanical and piezoresistance characterization of hydrogenated amorphous and nanocrystalline silicon thin films deposited by hot-wire chemical vapor deposition (HWCVD) and radio-frequency plasma-enhanced chemical vapor deposition (PECVD) using substrate temperatures between 100 and 250 °C. The microtensile technique is used to determine film properties such as Young's modulus, fracture strength and Weibull parameters, and linear and quadratic piezoresistance coefficients obtained at large applied stresses. The 95%-confidence interval for the elastic constant of the films characterized, 85.9 ± 0.3 GPa, does not depend significantly on the deposition method or on film structure. In contrast, mean fracture strength values range between 256 ± 8 MPa and 600 ± 32 MPa: nanocrystalline layers are slightly stronger than their amorphous counterparts and a pronounced increase in strength is observed for films deposited using HWCVD when compared to those grown by PECVD. Extracted Weibull moduli are below 10. In terms of piezoresistance, n-doped radio-frequency nanocrystalline silicon films deposited at 250 °C present longitudinal piezoresistive coefficients as large as -(2.57 ± 0.03) × 10-10 Pa-1 with marginally nonlinear response. Such values approach those of crystalline silicon and of polysilicon layers deposited at much higher temperatures.

  18. Modeling of InP metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Black, Linda R.; Clark, Ivan O.; Kui, J.; Jesser, William A.

    1991-01-01

    The growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: 1) transport phenomena, 2) chemistry, 3) boundary conditions, and 4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.

  19. Passivation properties of aluminum oxide films deposited by mist chemical vapor deposition for solar cell applications

    NASA Astrophysics Data System (ADS)

    Miki, Shohei; Iguchi, Koji; Kitano, Sho; Hayakashi, Koki; Hotta, Yasushi; Yoshida, Haruhiko; Ogura, Atsushi; Satoh, Shin-ichi; Arafune, Koji

    2015-08-01

    Aluminum oxide (AlOx) films were deposited by mist chemical vapor deposition (MCVD) in air for p-type crystalline silicon, and the effects of the deposition temperature (Tdep) and AlOx film thickness on the maximum surface recombination velocities (Smax) were evaluated. It was found that Smax was improved with increasing Tdep. The AlOx film deposited at 400 °C exhibited the best Smax value of 2.8 cm/s, and the passivation quality was comparable to that of AlOx deposited by other vacuum-based techniques. Smax was also improved with increasing film thickness. When the film thickness was above 10 nm, Smax was approximately 10 cm/s. From the Fourier transform infrared spectra, it was found that the AlOx films deposited by MCVD consisted of an AlOx layer and a Si-diffused AlOx layer. In addition, it is important for the layers to be thick enough to obtain high-quality passivation.

  20. Chemical vapor deposition modeling for high temperature materials

    NASA Technical Reports Server (NTRS)

    Gokoglu, Suleyman A.

    1992-01-01

    The formalism for the accurate modeling of chemical vapor deposition (CVD) processes has matured based on the well established principles of transport phenomena and chemical kinetics in the gas phase and on surfaces. The utility and limitations of such models are discussed in practical applications for high temperature structural materials. Attention is drawn to the complexities and uncertainties in chemical kinetics. Traditional approaches based on only equilibrium thermochemistry and/or transport phenomena are defended as useful tools, within their validity, for engineering purposes. The role of modeling is discussed within the context of establishing the link between CVD process parameters and material microstructures/properties. It is argued that CVD modeling is an essential part of designing CVD equipment and controlling/optimizing CVD processes for the production and/or coating of high performance structural materials.

  1. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, Kevin C.; Kodas, Toivo T.

    1994-01-01

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  2. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    PubMed

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage. PMID:22097561

  3. Effect of gas flow rates on the anatase-rutile transformation temperature of nanocrystalline TiO2 synthesised by chemical vapour synthesis.

    PubMed

    Ahmad, Md Imteyaz; Bhattacharya, S S; Fasel, Claudia; Hahn, Horst

    2009-09-01

    Of the three crystallographic allotropes of nanocrystalline titania (rutile, anatase and brookite), anatase exhibits the greatest potential for a variety of applications, especially in the area of catalysis and sensors. However, with rutile being thermodynamically the most stable phase, anatase tends to transform into rutile on heating to temperatures in the range of 500 degrees C to 700 degrees C. Efforts made to stabilize the anatase phase at higher temperatures by doping with metal oxides suffer from the problems of having a large amorphous content on synthesis as well as the formation of secondary impurity phases on doping. Recent studies have suggested that the as-synthesised phase composition, crystallite size, initial surface area and processing conditions greatly influence the anatase to rutile transformation temperature. In this study nanocrystalline titania was synthesised in the anatase form bya chemical vapour synthesis (CVS) method using titanium tetra iso-propoxide (TTIP) as a precursor under varying flow rates of oxygen and helium. The anatase to rutile transformation was studied using high temperature X-ray diffraction (HTXRD) and simultaneous thermogravimetric analysis (STA), followed by transmission electron microscopy (TEM). It was demonstrated that the anatase-rutile transformation temperatures were dependent on the oxygen to helium flow rate ratio during CVS and the results are presented and discussed. PMID:19928267

  4. A chemical assessment of the suitability of allyl- iso-propyltelluride as a Te precursor for metal organic vapour phase epitaxy

    NASA Astrophysics Data System (ADS)

    Hails, Janet E.; Cole-Hamilton, David J.; Stevenson, John; Bell, William; Foster, Douglas F.; Ellis, David

    2001-04-01

    The chemical studies, which led to the testing of allyl- iso-propyltelluride (allylTePr i) as a Te precursor in metal organic vapour phase epitaxy are presented. The pyrolysis in hydrogen of allylTePr i gave products including 1,5-hexadiene, propane and propene. Co-pyrolysis of dimethylcadmium (Me 2Cd) and allylTePr i gave the hydrocarbons expected from the pyrolysis of the individual precursors plus additional hydrocarbons including 2-methylpropane and 1-butene. Plots of percentage decomposition versus temperature, which proved extremely useful in determining the likely growth temperatures for both CdTe and HgTe, showed that allylTePr i is less stable than both Pr 2iTe (di- iso-propyltelluride) and Me 2Cd. The possible role of Hg in the growth of CdTe is also discussed. The chemistry of allylTePr i is well suited for use as an efficient precursor for epitaxial growth of tellurium containing semiconductors since there is very little formation of other organotellurium compounds on pyrolysis.

  5. Textures and morphologies of chemical vapor deposited (CVD) diamond

    SciTech Connect

    Clausing, R.E.; Heatherly, L.; Horton, L.L.; Specht, E.D.; Begun, G.M. ); Wang, Z.L. )

    1991-01-01

    The textures, surface morphologies, structural perfection, and properties of diamond films grown by activated chemical vapor deposition (CVD) vary greatly with the growth conditions. The evolution of two commonly observed polycrystalline morphologies, which give rise to <110> textures, will be described as well as the development of four films grown to produce <100>, <111>, and near <100>'' textures with various combinations of growth facets. These films were grown to test models of texture development. Films free of twins, microtwins, and stacking faults are deposited when only (100) facets are permitted to grow. In polycrystalline materials, special conditions must be met to avoid the formation of planar defects at the peripheries of individual crystallites. The planar defects grow from (111) or mixed microfaceted surfaces. Twinning plays an important role in growth of (111) faceted surfaces. The films have been characterized with Raman spectroscopy, x-ray diffraction, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and optical methods. 13 refs., 7 figs.

  6. Chemical vapor deposition of low reflective cobalt (II) oxide films

    NASA Astrophysics Data System (ADS)

    Amin-Chalhoub, Eliane; Duguet, Thomas; Samélor, Diane; Debieu, Olivier; Ungureanu, Elisabeta; Vahlas, Constantin

    2016-01-01

    Low reflective CoO coatings are processed by chemical vapor deposition from Co2(CO)8 at temperatures between 120 °C and 190 °C without additional oxygen source. The optical reflectivity in the visible and near infrared regions stems from 2 to 35% depending on deposition temperature. The combination of specific microstructural features of the coatings, namely a fractal "cauliflower" morphology and a grain size distribution more or less covering the near UV and IR wavelength ranges enhance light scattering and gives rise to a low reflectivity. In addition, the columnar morphology results in a density gradient in the vertical direction that we interpret as a refractive index gradient lowering reflectivity further down. The coating formed at 180 °C shows the lowest average reflectivity (2.9%), and presents an interesting deep black diffuse aspect.

  7. Synthesis of mullite coatings by chemical vapor deposition

    SciTech Connect

    Mulpuri, R.P.; Auger, M.; Sarin, V.K.

    1996-08-01

    Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{circ}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}-SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

  8. Electrical and chemical characterization of FIB-deposited insulators

    SciTech Connect

    Campbell, A.N.; Tanner, D.M.; Soden, J.M.; Adams, E.; Gibson, M.; Abramo, M.; Doyle, A.; Stewart, D.K.

    1997-10-01

    The electrical and chemical properties of insulators produced by codeposition of siloxane compounds or TEOS with oxygen in a focused ion beam (FIB) system were investigated. Metal-insulator-metal capacitor structures were fabricated and tested. Specifically, leakage current and breakdown voltage were measured and used to calculate the effective resistance and breakdown field. Capacitance measurements were performed on a subset of the structures. It was found that the siloxane-based FIB-insulators had superior electrical properties to those based on TEOS. Microbeam Rutherford backscattering spectrometry analysis and Fourier transform infrared spectroscopy were used to characterize the films and to help understand the differences in electrical behavior as a function of gas chemistry and deposition conditions. Finally, a comparison is made between the results presented here, previous results for FIB-deposited insulators, and typical thermally-grown gate oxides and interlevel dielectric SiO{sub 2} insulators.

  9. Influence of Deposition Time on ZnS Thin Films Performance with Chemical Bath Deposition

    NASA Astrophysics Data System (ADS)

    Zhou, Limei; Tang, Nan; Wu, Sumei; Hu, Xiaofei; Xue, Yuzhi

    ZnS thin films had been deposited by chemical bath deposition method onto glass substrates in alkaline liquor. The reaction solution is made of ZnSO4, NH4OH and SC(NH2)2. Different deposition times (1 h, 1.5 h, 2 h, 2.5 h and 3 h) were selected to study the performance of ZnS thin films. As the results, the ZnS films' thickness were about 50-207 nm. XRD results showed an amorphous structure. Through comparing the surface morphology before and after annealing, it could be seen that annealing made some particles grow up and the surface smooth and even. The transmittance decreased with the increase of deposition time in the range of 300-800 nm. The transmittance of annealed ZnS film was lower than that of deposited one in the range of 300-800 nm. The ZnS band gap values were calculated in the range of 3.72-3.9 eV.

  10. Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition

    SciTech Connect

    Nam, Youngwoo; Sun, Jie; Lindvall, Niclas; Yurgens, August; Jae Yang, Seung; Rae Park, Chong; Woo Park, Yung

    2014-01-13

    We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

  11. Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Nam, Youngwoo; Sun, Jie; Lindvall, Niclas; Jae Yang, Seung; Rae Park, Chong; Woo Park, Yung; Yurgens, August

    2014-01-01

    We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

  12. Chemical vapor deposited silicon carbide mirrors for extreme ultraviolet applications

    NASA Astrophysics Data System (ADS)

    Keski-Kuha, Ritva A.; Osantowski, John F.; Leviton, Douglas B.; Saha, Timo T.; Wright, Geraldine A.; Boucarut, Rene A.; Fleetwood, Charles M.; Madison, Timothy J.

    1997-01-01

    Advances in optical coating and materials technology have made possible the development of instruments with substantially improved efficiency in the extreme ultraviolet (EUV). For example, the development of the chemical vapor deposition (CVD) SiC mirrors provides an opportunity to extend the range of normal-incidence instruments dow to 60 nm. CVD SiC is a highly polishable material yielding low- scattering surfaces. High UV reflectivity and desirable mechanical and thermal properties make CVD SiC an attractive mirror and/or coating material for EUV applications. The EUV performance of SiC mirrors, as well as some strengths and problem areas, is discussed.

  13. Damping mechanisms in chemically vapor deposited SiC fibers

    NASA Technical Reports Server (NTRS)

    Dicarlo, James A.; Goldsby, Jon C.

    1993-01-01

    Evaluating the damping of reinforcement fibers is important for understanding their microstructures and the vibrational response of their structural composites. In this study the damping capacities of two types of chemically vapor deposited silicon carbide fibers were measured from -200 C to as high as 800 C. Measurements were made at frequencies in the range 50 to 15000 Hz on single cantilevered fibers. At least four sources were identified which contribute to fiber damping, the most significant being thermoelastic damping and grain boundary sliding. The mechanisms controlling all sources and their potential influence on fiber and composite performance are discussed.

  14. Plasma-enhanced chemical vapor deposition of multiwalled carbon nanofibers

    NASA Technical Reports Server (NTRS)

    Matthews, Kristopher; Cruden, Brett A.; Chen, Bin; Meyyappan, M.; Delzeit, Lance

    2002-01-01

    Plasma-enhanced chemical vapor deposition is used to grow vertically aligned multiwalled carbon nanofibers (MWNFs). The graphite basal planes in these nanofibers are not parallel as in nanotubes; instead they exhibit a small angle resembling a stacked cone arrangement. A parametric study with varying process parameters such as growth temperature, feedstock composition, and substrate power has been conducted, and these parameters are found to influence the growth rate, diameter, and morphology. The well-aligned MWNFs are suitable for fabricating electrode systems in sensor and device development.

  15. Chemical Vapor Deposited Zinc Sulfide. SPIE Press Monograph

    SciTech Connect

    McCloy, John S.; Tustison, Randal W.

    2013-04-22

    Zinc sulfide has shown unequaled utility for infrared windows that require a combination of long-wavelength infrared transparency, mechanical durability, and elevated-temperature performance. This book reviews the physical properties of chemical vapor deposited ZnS and their relationship to the CVD process that produced them. An in-depth look at the material microstructure is included, along with a discussion of the material's optical properties. Finally, because the CVD process itself is central to the development of this material, a brief history is presented.

  16. Chemical surface deposition of ultra-thin semiconductors

    DOEpatents

    McCandless, Brian E.; Shafarman, William N.

    2003-03-25

    A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.

  17. Low Temperature Deposition of β-phase Silicon Nitride Using Inductively Coupled Plasma Chemical Vapor Deposition Technique

    NASA Astrophysics Data System (ADS)

    Kshirsagar, Abhijeet; Duttagupta, S. P.; Gangal, S. A.

    2010-12-01

    Silicon nitride (SiN) films have been deposited at low temperature (≤100° C), by Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD) technique. The chemical and physical properties of deposited SiN films such as refractive index, deposition rate, and film stress have been measured. Additional structural characterization is performed using X-ray diffraction (XRD) and Micro Raman Spectroscopy. It is found that the films obtained are of low stress and have β-phase. To the best of authors knowledge such low temperature, low stress, β-phase SiN films deposition using ICPCVD are being reported for the first time.

  18. ZnS nanoflakes deposition by modified chemical method

    SciTech Connect

    Desai, Mangesh A. Sartale, S. D.

    2014-04-24

    We report deposition of zinc sulfide nanoflakes on glass substrates by modified chemical method. The modified chemical method involves adsorption of zinc–thiourea complex on the substrate and its dissociation in presence of hydroxide ions to release sulfur ions from thiourea which react with zinc ions present in the complex to form zinc sulfide nanoflakes at room temperature. Influence of zinc salt and thiourea concentrations ratios on the morphology of the films was investigated by scanning electron microscope (SEM). The ratio of zinc and thiourea in the zinc–thiourea complex significantly affect the size of the zinc sulfide nanoflakes, especially width and density of the nanoflakes. The X-ray diffraction analysis exhibits polycrystalline nature of the zinc sulfide nanoflakes with hexagonal phase.

  19. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

    PubMed Central

    Zhan, Hualin; Garrett, David J.; Apollo, Nicholas V.; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

    2016-01-01

    High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm3, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail. PMID:26805546

  20. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhan, Hualin; Garrett, David J.; Apollo, Nicholas V.; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

    2016-01-01

    High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm3, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail.

  1. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition.

    PubMed

    Zhan, Hualin; Garrett, David J; Apollo, Nicholas V; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

    2016-01-01

    High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm(3), were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail. PMID:26805546

  2. Fabrication of tin-filled carbon nanofibres by microwave plasma vapour deposition and their in situ heating observation by environmental transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Tokunaga, Tomoharu; Kanematsu, Takumi; Ito, Takahumi; Ota, Takahisa; Hayashi, Yasuhiko; Sasaki, Katsuhiro; Yamamoto, Takahisa

    2013-06-01

    Sn-filled carbon nanofibres (CNFs) are fabricated by microwave plasma chemical deposition. Scanning electron microscopy observations revealed the existence of a Sn island under the CNFs. The structure of the CNFs is investigated, and the behaviour of Sn in the internal space of CNFs is revealed by performing in situ heating observations by environmental transmission electron microscopy (ETEM). ETEM observations reveal that they have low-crystallized carbon wall and Sn occupies not only the CNF's internal space but also its carbon wall. The Sn inside the CNF is completely covered by the carbon wall. Further, the in situ heating observations reveal that Sn within the internal space and the carbon wall of the CNFs diffused to the outside during heating. Moreover, it is found that higher membered carbon rings and defects in the graphite layer act as diffusion routes between disordered carbon layers.

  3. Chemical vapor deposition of conformal, functional, and responsive polymer films.

    PubMed

    Alf, Mahriah E; Asatekin, Ayse; Barr, Miles C; Baxamusa, Salmaan H; Chelawat, Hitesh; Ozaydin-Ince, Gozde; Petruczok, Christy D; Sreenivasan, Ramaswamy; Tenhaeff, Wyatt E; Trujillo, Nathan J; Vaddiraju, Sreeram; Xu, Jingjing; Gleason, Karen K

    2010-05-11

    Chemical vapor deposition (CVD) polymerization utilizes the delivery of vapor-phase monomers to form chemically well-defined polymeric films directly on the surface of a substrate. CVD polymers are desirable as conformal surface modification layers exhibiting strong retention of organic functional groups, and, in some cases, are responsive to external stimuli. Traditional wet-chemical chain- and step-growth mechanisms guide the development of new heterogeneous CVD polymerization techniques. Commonality with inorganic CVD methods facilitates the fabrication of hybrid devices. CVD polymers bridge microfabrication technology with chemical, biological, and nanoparticle systems and assembly. Robust interfaces can be achieved through covalent grafting enabling high-resolution (60 nm) patterning, even on flexible substrates. Utilizing only low-energy input to drive selective chemistry, modest vacuum, and room-temperature substrates, CVD polymerization is compatible with thermally sensitive substrates, such as paper, textiles, and plastics. CVD methods are particularly valuable for insoluble and infusible films, including fluoropolymers, electrically conductive polymers, and controllably crosslinked networks and for the potential to reduce environmental, health, and safety impacts associated with solvents. Quantitative models aid the development of large-area and roll-to-roll CVD polymer reactors. Relevant background, fundamental principles, and selected applications are reviewed. PMID:20544886

  4. Fundamental studies of the chemical vapor deposition of diamond

    SciTech Connect

    Stevenson, D.A.

    1991-01-01

    The plasma or thermally enhanced low pressure chemical vapor deposition of diamond films is an exciting development with many challenging fundamental problems. The early stages of nucleation is relevant to the initial growth rate and the perfection and morphology of the deposit. To isolate one of the factors that influence nucleation, we have studied the effect of surface topography on the nucleation process. Our earlier work has shown preferential nucleation on sharp convex features and we have proposed several possible reasons for this behavior, including dangling bonds at the convex features. In our recent work, we have extended our investigation to include a novel patterning of silicon substrates used to pattern silicon solar cells. The results are consistent with our earlier observations that the majority of nucleation events occur on protruding surface features. In an effort to establish whether dangling bonds at the protruding surfaces may be responsible for the selective nucleation, we have evaluated the dangling bond concentration using electron spin resonance. We have carried out deposition under nominally identical surface topography, but with different concentrations of dangling bonds at or near the surface. The results of this study indicate that dangling bonds play a minor role in enhancing nucleation, in contrast to a substantial role played by special surface topographical features. In the course of the past year, we have submitted four manuscripts for publication and have made six presentations.

  5. Solvent-assisted dewetting during chemical vapor deposition.

    PubMed

    Chen, Xichong; Anthamatten, Mitchell

    2009-10-01

    This study examines the use of a nonreactive solvent vapor, tert-butanol, during initiated chemical vapor deposition (iCVD) to promote polymer film dewetting. iCVD is a solventless technique to grow polymer thin films directly from gas phase feeds. Using a custom-built axisymmetric hot-zone reactor, smooth poly(methyl methacrylate) films are grown from methyl methacrylate (MMA) and tert-butyl peroxide (TBPO). When solvent vapor is used, nonequilibrium dewetted structures comprising of randomly distributed polymer droplets are observed. The length scale of observed topographies, determined using power spectral density (PSD) analysis, ranges from 5 to 100 microm and is influenced by deposition conditions, especially the carrier gas and solvent vapor flow rates. The use of a carrier gas leads to faster deposition rates and suppresses thin film dewetting. The use of solvent vapor promotes dewetting and leads to larger length scales of the dewetted features. Control over lateral length scale is demonstrated by preparation of hierarchal "bump on bump" topographies. Vapor-induced dewetting is demonstrated on silicon wafer substrate with a native oxide layer and also on hydrophobically modified substrate prepared using silane coupling. Autophobic dewetting of PMMA from SiOx/Si during iCVD is attributed to a thin film instability driven by both long-range van der Waals forces and short-range polar interactions. PMID:19670895

  6. Quantitative study on the chemical solution deposition of zinc oxysulfide

    DOE PAGESBeta

    Reinisch, Michael; Perkins, Craig L.; Steirer, K. Xerxes

    2015-11-21

    Zinc Oxysulfide (ZnOS) has demonstrated potential in the last decade to replace CdS as a buffer layer material since it is a wide-band-gap semiconductor with performance advantages over CdS (Eg = 2.4 eV) in the near UV-range for solar energy conversion. However, questions remain on the growth mechanisms of chemical bath deposited ZnOS. In this study, a detailed model is employed to calculate solubility diagrams that describe simple conditions for complex speciation control using only ammonium hydroxide without additional base. For these conditions, ZnOS is deposited via aqueous solution deposition on a quartz crystal microbalance in a continuous flow cell.more » Data is used to analyze the growth rate dependence on temperature and also to elucidate the effects of dimethylsulfoxide (DMSO) when used as a co-solvent. Activation energies (EA) of ZnOS are calculated for different flow rates and solution compositions. As a result, the measured EA relationships are affected by changes in the primary growth mechanism when DMSO is included.« less

  7. Quantitative study on the chemical solution deposition of zinc oxysulfide

    SciTech Connect

    Reinisch, Michael; Perkins, Craig L.; Steirer, K. Xerxes

    2015-11-21

    Zinc Oxysulfide (ZnOS) has demonstrated potential in the last decade to replace CdS as a buffer layer material since it is a wide-band-gap semiconductor with performance advantages over CdS (Eg = 2.4 eV) in the near UV-range for solar energy conversion. However, questions remain on the growth mechanisms of chemical bath deposited ZnOS. In this study, a detailed model is employed to calculate solubility diagrams that describe simple conditions for complex speciation control using only ammonium hydroxide without additional base. For these conditions, ZnOS is deposited via aqueous solution deposition on a quartz crystal microbalance in a continuous flow cell. Data is used to analyze the growth rate dependence on temperature and also to elucidate the effects of dimethylsulfoxide (DMSO) when used as a co-solvent. Activation energies (EA) of ZnOS are calculated for different flow rates and solution compositions. As a result, the measured EA relationships are affected by changes in the primary growth mechanism when DMSO is included.

  8. Chemical vapor deposition of amorphous silicon films from disilane

    SciTech Connect

    Bogaert, R.J.

    1986-01-01

    Amorphous silicon films for fabrication of solar cells have been deposited by thermal chemical vapor deposition (CVD) from disilane (Si/sub 2/H/sub 6/) using a tubular flow reactor. A mathematical description for the CVD reactor was developed and solved by a numerical procedure. The proposed chemical reaction network for the model is based on silylene (SiH/sub 2/) insertion in the gas phase and film growth from SiH/sub 2/ and silicon polymers (Si/sub n/N/sub 2n/, n approx. 10). Estimates of the rate constants have been obtained for trisilane decomposition, silicon polymer formation, and polymer dehydrogenation. The silane unimolecular decomposition rate constants were corrected for pressure effects. The model behavior is compared to the experimental results over the range of conditions: reactor temperature (360 to 485/sup 0/C), pressures (2 to 48 torr), and gas holding time (1 to 70 s). Within the above range of conditions, film growth rate varies from 0.01 to 30 A/s. Results indicate that silicon polymers are the main film precursors for gas holding times greater than 3 s. Film growth by silylene only becomes important at short holding times, large inert gas dilution, and positions near the beginning of the reactor hot zone.

  9. Conversion Coatings for Aluminum Alloys by Chemical Vapor Deposition Mechanisms

    NASA Technical Reports Server (NTRS)

    Reye, John T.; McFadden, Lisa S.; Gatica, Jorge E.; Morales, Wilfredo

    2004-01-01

    With the rise of environmental awareness and the renewed importance of environmentally friendly processes, the United States Environmental Protection Agency has targeted surface pre-treatment processes based on chromates. Indeed, this process has been subject to regulations under the Clean Water Act as well as other environmental initiatives, and there is today a marked movement to phase the process out in the near future. Therefore, there is a clear need for new advances in coating technology that could provide practical options for replacing present industrial practices. Depending on the final application, such coatings might be required to be resistant to corrosion, act as chemically resistant coatings, or both. This research examined a chemical vapor deposition (CVD) mechanism to deposit uniform conversion coatings onto aluminum alloy substrates. Robust protocols based on solutions of aryl phosphate ester and multi-oxide conversion coating (submicron) films were successfully grown onto the aluminum alloy samples. These films were characterized by X-ray Photoelectron Spectroscopy (XPS). Preliminary results indicate the potential of this technology to replace aqueous-based chromate processes.

  10. Deposition of aligned bamboo-like carbon nanotubes via microwave plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Cui, H.; Zhou, O.; Stoner, B. R.

    2000-11-01

    Aligned multiwall carbon nanotubes have been grown on silicon substrates by microwave plasma enhanced chemical vapor deposition using methane/ammonia mixtures. Scanning electron microscopy shows that the nanotubes are well aligned with high aspect ratio and growth direction normal to the substrate. Transmission electron microscopy reveals that the majority phase has a bamboo-like structure. Data are also presented showing process variable effects on the size and microstructure of the aligned nanotubes, giving insight into possible nucleation and growth mechanisms for the process.