Reliability Assessment and Activation Energy Study of Au and Pd-Coated Cu Wires Post High Temperature Aging in Nanoscale Semiconductor Packaging.

PubMed

Gan, C L; Hashim, U

2013-06-01

Wearout reliability and high temperature storage life (HTSL) activation energy of Au and Pd-coated Cu (PdCu) ball bonds are useful technical information for Cu wire deployment in nanoscale semiconductor device packaging. This paper discusses the influence of wire type on the wearout reliability performance of Au and PdCu wire used in fine pitch BGA package after HTSL stress at various aging temperatures. Failure analysis has been conducted to identify the failure mechanism after HTSL wearout conditions for Au and PdCu ball bonds. Apparent activation energies (Eaa) of both wire types are investigated after HTSL test at 150 °C, 175 °C and 200 °C aging temperatures. Arrhenius plot has been plotted for each ball bond types and the calculated Eaa of PdCu ball bond is 0.85 eV and 1.10 eV for Au ball bond in 110 nm semiconductor device. Obviously Au ball bond is identified with faster IMC formation rate with IMC Kirkendall voiding while PdCu wire exhibits equivalent wearout and or better wearout reliability margin compare to conventional Au wirebond. Lognormal plots have been established and its mean to failure (t 50 ) have been discussed in this paper.

Fluidized-Bed Cleaning of Silicon Particles

NASA Technical Reports Server (NTRS)

Rohatgi, Naresh K.; Hsu, George C.

1987-01-01

Fluidized-bed chemical cleaning process developed to remove metallic impurities from small silicon particles. Particles (250 micrometer in size) utilized as seed material in silane pyrolysis process for production of 1-mm-size silicon. Product silicon (1 mm in size) used as raw material for fabrication of solar cells and other semiconductor devices. Principal cleaning step is wash in mixture of hydrochloric and nitric acids, leaching out metals and carrying them away as soluble chlorides. Particles fluidized by cleaning solution to assure good mixing and uniform wetting.

The relationship between spontaneous abortion and female workers in the semiconductor industry.

PubMed

Kim, Heechan; Kwon, Ho-Jang; Rhie, Jeongbae; Lim, Sinye; Kang, Yun-Dan; Eom, Sang-Yong; Lim, Hyungryul; Myong, Jun-Pyo; Roh, Sangchul

2017-01-01

This study investigated the relationship between job type and the risk for spontaneous abortion to assess the reproductive toxicity of female workers in the semiconductor industry. A questionnaire survey was administered to current female workers of two semiconductor manufacturing plants in Korea. We included female workers who became pregnant at least 6 months after the start of their employment with the company. The pregnancy outcomes of 2,242 female workers who experienced 4,037 pregnancies were investigated. Personnel records were used to assign the subjects to one of three groups: fabrication process workers, packaging process workers, and clerical workers. To adjust for within-person correlations between pregnancies, a generalized estimating equation was used. The logistic regression analysis was limited to the first pregnancy after joining the company to satisfy the assumption of independence among pregnancies. Moreover, we stratified the analysis by time period (pregnancy in the years prior to 2008 vs. after 2009) to reflect differences in occupational exposure based on semiconductor production periods. The risk for spontaneous abortion in female semiconductor workers was not significantly higher for fabrication and packaging process workers than for clerical workers. However, when we stratified by time period, the odds ratio for spontaneous abortion was significantly higher for packaging process workers who became pregnant prior to 2008 when compared with clerical workers (odds ratio: 2.21; 95% confidence interval: 1.01-4.81). When examining the pregnancies of female semiconductor workers that occurred prior to 2008, packaging process workers showed a significantly higher risk for spontaneous abortions than did clerical workers. The two semiconductor production periods in our study (prior to 2008 vs. after 2009) had different automated processes, chemical exposure levels, and working environments. Thus, the conditions prior to 2008 may have increased the

Research and Design on a Product Data Definition System of Semiconductor Packaging Industry

NASA Astrophysics Data System (ADS)

Shi, Jinfei; Ma, Qingyao; Zhou, Yifan; Chen, Ruwen

2017-12-01

This paper develops a product data definition (PDD) system for a semiconductor packaging and testing company with independent intellectual property rights. The new PDD system can solve the problems such as, the effective control of production plans, the timely feedback of production processes, and the efficient schedule of resources. Firstly, this paper introduces the general requirements of the PDD system and depicts the operation flow and the data flow of the PDD system. Secondly, the overall design scheme of the PDD system is put forward. After that, the physical data model is developed using the Power Designer15.0 tool, and the database system is built. Finally, the function realization and running effects of the PDD system are analysed. The successful operation of the PDD system can realize the information flow among various production departments of the enterprise to meet the standard of the enterprise manufacturing integration and improve the efficiency of production management.

49 CFR 174.57 - Cleaning cars.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 2 2010-10-01 2010-10-01 false Cleaning cars. 174.57 Section 174.57... and Loading Requirements § 174.57 Cleaning cars. All hazardous material which has leaked from a package in any rail car or on other railroad property must be carefully removed. ...

49 CFR 174.57 - Cleaning cars.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 2 2014-10-01 2014-10-01 false Cleaning cars. 174.57 Section 174.57... and Loading Requirements § 174.57 Cleaning cars. All hazardous material which has leaked from a package in any rail car or on other railroad property must be carefully removed. ...

49 CFR 174.57 - Cleaning cars.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 2 2012-10-01 2012-10-01 false Cleaning cars. 174.57 Section 174.57... and Loading Requirements § 174.57 Cleaning cars. All hazardous material which has leaked from a package in any rail car or on other railroad property must be carefully removed. ...

49 CFR 174.57 - Cleaning cars.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 2 2011-10-01 2011-10-01 false Cleaning cars. 174.57 Section 174.57... and Loading Requirements § 174.57 Cleaning cars. All hazardous material which has leaked from a package in any rail car or on other railroad property must be carefully removed. ...

49 CFR 174.57 - Cleaning cars.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 2 2013-10-01 2013-10-01 false Cleaning cars. 174.57 Section 174.57... and Loading Requirements § 174.57 Cleaning cars. All hazardous material which has leaked from a package in any rail car or on other railroad property must be carefully removed. ...

Emission factors of air toxics from semiconductor manufacturing in Korea.

PubMed

Eom, Yun-Sung; Hong, Ji-Hyung; Lee, Suk-Jo; Lee, Eun-Jung; Cha, Jun-Seok; Lee, Dae-Gyun; Bang, Sun-Ae

2006-11-01

The development of local, accurate emission factors is very important for the estimation of reliable national emissions and air quality management. For that, this study is performed for pollutants released to the atmosphere with source-specific emission tests from the semiconductor manufacturing industry. The semiconductor manufacturing industry is one of the major sources of air toxics or hazardous air pollutants (HAPs); thus, understanding the emission characteristics of the emission source is a very important factor in the development of a control strategy. However, in Korea, there is a general lack of information available on air emissions from the semiconductor industry. The major emission sources of air toxics examined from the semiconductor manufacturing industry were wet chemical stations, coating applications, gaseous operations, photolithography, and miscellaneous devices in the wafer fabrication and semiconductor packaging processes. In this study, analyses of emission characteristics, and the estimations of emission data and factors for air toxics, such as acids, bases, heavy metals, and volatile organic compounds from the semiconductor manufacturing process have been performed. The concentration of hydrogen chloride from the packaging process was the highest among all of the processes. In addition, the emission factor of total volatile organic compounds (TVOCs) for the packaging process was higher than that of the wafer fabrication process. Emission factors estimated in this study were compared with those of Taiwan for evaluation, and they were found to be of similar level in the case of TVOCs and fluorine compounds.

Ultraviolet-Ozone Cleaning of Semiconductor Surfaces

DTIC Science & Technology

1992-01-01

Bolon and Kunz (1) reported that UV light had the capability to depolymerize a variety of photoresist polymers. The polymer films were enclosed in a...placed between the UV light and the films, or when a nitrogen atmosphere was used instead of oxygen, the depolymerization was hindered. Thus, Bolon and...ozone cleaning rates. Bolon and Kunz (1), on the other hand, found that the rate of ozone depolymerization of photoresists did not change significantly

Ultraviolet-Ozone Cleaning of Semiconductor Surfaces

DTIC Science & Technology

1992-10-01

rooms and in the air ducts of air conditioning systems (7). In 1972, Bolon and Kunz (1) reported that UV light had the capability to depolymerize a...instead of oxygen, the depolymerization was hindered. Thus, Bolon and Kunz recognized that oxygen and wavelengths shorter than 300-nm played a role in the...that mild heat increases the UV/ozone cleaning rates. Bolon and Kunz (1), on the other hand, found that the rate of ozone depolymerization of

Enhanced thermaly managed packaging for III-nitride light emitters

NASA Astrophysics Data System (ADS)

Kudsieh, Nicolas

In this Dissertation our work on `enhanced thermally managed packaging of high power semiconductor light sources for solid state lighting (SSL)' is presented. The motivation of this research and development is to design thermally high stable cost-efficient packaging of single and multi-chip arrays of III-nitrides wide bandgap semiconductor light sources through mathematical modeling and simulations. Major issues linked with this technology are device overheating which causes serious degradation in their illumination intensity and decrease in the lifetime. In the introduction the basics of III-nitrides WBG semiconductor light emitters are presented along with necessary thermal management of high power cingulated and multi-chip LEDs and laser diodes. This work starts at chip level followed by its extension to fully packaged lighting modules and devices. Different III-nitride structures of multi-quantum well InGaN/GaN and AlGaN/GaN based LEDs and LDs were analyzed using advanced modeling and simulation for different packaging designs and high thermal conductivity materials. Study started with basic surface mounted devices using conventional packaging strategies and was concluded with the latest thermal management of chip-on-plate (COP) method. Newly discovered high thermal conductivity materials have also been incorporated for this work. Our study also presents the new approach of 2D heat spreaders using such materials for SSL and micro LED array packaging. Most of the work has been presented in international conferences proceedings and peer review journals. Some of the latest work has also been submitted to well reputed international journals which are currently been reviewed for publication. .

7 CFR 58.413 - Cutting and packaging rooms.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 3 2011-01-01 2011-01-01 false Cutting and packaging rooms. 58.413 Section 58.413....413 Cutting and packaging rooms. When small packages of cheese are cut and wrapped, separate rooms shall be provided for the cleaning and preparation of the bulk cheese and for the cutting and wrapping...

7 CFR 58.413 - Cutting and packaging rooms.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 3 2010-01-01 2010-01-01 false Cutting and packaging rooms. 58.413 Section 58.413....413 Cutting and packaging rooms. When small packages of cheese are cut and wrapped, separate rooms shall be provided for the cleaning and preparation of the bulk cheese and for the cutting and wrapping...

7 CFR 58.241 - Packaging, repackaging and storage.

Code of Federal Regulations, 2012 CFR

2012-01-01

... contamination. The room should be vacuumed as often as necessary and kept clean and orderly. ... clean, sound commercially accepted container or packaging material which will satisfactorily protect the... them practically free of residual product before being transferred from the filling room to the...

7 CFR 58.241 - Packaging, repackaging and storage.

Code of Federal Regulations, 2014 CFR

2014-01-01

... contamination. The room should be vacuumed as often as necessary and kept clean and orderly. ... clean, sound commercially accepted container or packaging material which will satisfactorily protect the... them practically free of residual product before being transferred from the filling room to the...

Tractor Mechanics: Learning Activity Packages 1-19.

ERIC Educational Resources Information Center

Clemson Univ., SC. Vocational Education Media Center.

Learning activity packages are presented for teaching tractor mechanics. The first of two sections deals with miscellaneous tasks and contains learning activity packages on cleaning the tractor and receiving new tractor parts. Section 2 is concerned with maintaining and servicing the electrical system, and it includes the following learning…

Substrate solder barriers for semiconductor epilayer growth

DOEpatents

Drummond, Timothy J.; Ginley, David S.; Zipperian, Thomas E.

1989-01-01

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

Substrate solder barriers for semiconductor epilayer growth

DOEpatents

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1989-05-09

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

Genesis Spacecraft Science Canister Preliminary Inspection and Cleaning

NASA Technical Reports Server (NTRS)

Hittle, J. D.; Calaway, M. J.; Allton, J. H.; Warren, J. L.; Schwartz, C. M.; Stansbery, E. K.

2006-01-01

The Genesis science canister is an aluminum cylinder (75 cm diameter and 35 cm tall) hinged at the mid-line for opening. This canister was cleaned and assembled in an ISO level 4 (Class 10) clean room at Johnson Space Center (JSC) prior to launch. The clean solar collectors were installed and the canister closed in the cleanroom to preserve collector cleanliness. The canister remained closed until opened on station at Earth-Sun L1 for solar wind collection. At the conclusion of collection, the canister was again closed to preserve collector cleanliness during Earth return and re-entry. Upon impacting the dry Utah lakebed at 300 kph the science canister integrity was breached. The canister was returned to JSC. The canister shell was briefly examined, imaged, gently cleaned of dust and packaged for storage in anticipation of future detailed examination. The condition of the science canister shell noted during this brief examination is presented here. The canister interior components were packaged and stored without imaging due to time constraints.

The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

NASA Technical Reports Server (NTRS)

Bouldin, D. L.; Eastes, R. W.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

1979-01-01

The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

The How To Clean Kit. Making Easier Work of Laundering, Cleaning and Dishwashing.

ERIC Educational Resources Information Center

Procter and Gamble Educational Services, Cincinnati, OH.

This package contains a handbook explaining how to make laundering, cleaning, and dishwashing easier; a guide for using the handbook with secondary students, youth groups, adult groups, and students enrolled in teacher preparatory classes; a set of worksheets designed to reinforce concepts introduced in the guide; and four charts. The following…

Packaging-induced failure of semiconductor lasers and optical telecommunications components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharps, J.A.

1996-12-31

Telecommunications equipment for field deployment generally have specified lifetimes of > 100,000 hr. To achieve this high reliability, it is common practice to package sensitive components in hermetic, inert gas environments. The intent is to protect components from particulate and organic contamination, oxidation, and moisture. However, for high power density 980 nm diode lasers used in optical amplifiers, the authors found that hermetic, inert gas packaging induced a failure mode not observed in similar, unpackaged lasers. They refer to this failure mode as packaging-induced failure, or PIF. PIF is caused by nanomole amounts of organic contamination which interact with highmore » intensity 980 nm light to form solid deposits over the emitting regions of the lasers. These deposits absorb 980 nm light, causing heating of the laser, narrowing of the band gap, and eventual thermal runaway. The authors have found PIF is averted by packaging with free O{sub 2} and/or a getter material that sequesters organics.« less

Substrate solder barriers for semiconductor epilayer growth

DOEpatents

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1987-10-23

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

TECHNICAL AND REGULATORY CONSIDERATIONS IN USING FREIGHT CONTAINERS AS INDUSTRIAL PACKAGES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Opperman, E; Mark Hawk, M; Ron Natali, R

2007-10-16

The United States (US) Department of Energy (DOE), Office of Environmental Management (EM), is actively pursuing activities to reduce the radiological risk and clean up the environmental legacy of the nation's nuclear weapons programs. EM has made significant progress in recent years in the clean-up and closure of sites and is also focusing on longer-term activities necessary for the completion of the clean-up program. The packaging and transportation of contaminated demolition debris and low-level waste (LLW) materials in a safe and cost-effective manner are essential in completing this mission. Toward this end, the US Department of Transportation's (DOT) Final Rulemore » on Hazardous Materials Regulation Final Rule issued January 26, 2004, included a new provision authorizing the use of Freight Containers (e.g., 20 and 40-foot ISO Containers) as Industrial Packages Type 1, 2, or 3 (IP-1, IP-2, and IP-3). This paper will discuss the technical and regulatory considerations in using these newly authorized and large packages for the packaging and transportation of LLW materials.« less

Technical and Regulatory Considerations in Using Freight Containers as Industrial Packages

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hawk, Mark B; Opperman, Erich; Natali, Ronald

2008-01-01

The US Department of Energy (DOE), Office of Environmental Management (EM), is actively pursuing activities to reduce the radiological risk and clean up the environmental legacy of the nation's nuclear weapons programmes. The EM has made significant progress in recent years in the clean-up and closure of sites and is also focusing on longer term activities necessary for the completion of the clean-up programme. The packaging and transportation of contaminated demolition debris and low level waste materials in a safe and cost effective manner are essential in completing this mission. Toward this end, the US Department of Transportation's Final Rulemore » on Hazardous Materials Regulation issued on 26 January 2004, included a new provision authorising the use of freight containers (e.g. 20 and 40 ft ISO containers) as industrial packages type 2 or 3. This paper will discuss the technical and regulatory considerations in using these newly authorised and large packages for the packaging and transportation of low level waste materials.« less

Sintered silver joints via controlled topography of electronic packaging subcomponents

DOEpatents

Wereszczak, Andrew A.

2014-09-02

Disclosed are sintered silver bonded electronic package subcomponents and methods for making the same. Embodiments of the sintered silver bonded EPSs include topography modification of one or more metal surfaces of semiconductor devices bonded together by the sintered silver joint. The sintered silver bonded EPSs include a first semiconductor device having a first metal surface, the first metal surface having a modified topography that has been chemically etched, grit blasted, uniaxial ground and/or grid sliced connected to a second semiconductor device which may also include a first metal surface with a modified topography, a silver plating layer on the first metal surface of the first semiconductor device and a silver plating layer on the first metal surface of the second semiconductor device and a sintered silver joint between the silver plating layers of the first and second semiconductor devices which bonds the first semiconductor device to the second semiconductor device.

Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyata, Noriyuki, E-mail: nori.miyata@aist.go.jp; Mori, Takahiro; Yasuda, Tetsuji

2014-06-09

HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200 °C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSbmore » surfaces was observed.« less

Automated carbon dioxide cleaning system

NASA Technical Reports Server (NTRS)

Hoppe, David T.

1991-01-01

Solidified CO2 pellets are an effective blast media for the cleaning of a variety of materials. CO2 is obtained from the waste gas streams generated from other manufacturing processes and therefore does not contribute to the greenhouse effect, depletion of the ozone layer, or the environmental burden of hazardous waste disposal. The system is capable of removing as much as 90 percent of the contamination from a surface in one pass or to a high cleanliness level after multiple passes. Although the system is packaged and designed for manual hand held cleaning processes, the nozzle can easily be attached to the end effector of a robot for automated cleaning of predefined and known geometries. Specific tailoring of cleaning parameters are required to optimize the process for each individual geometry. Using optimum cleaning parameters the CO2 systems were shown to be capable of cleaning to molecular levels below 0.7 mg/sq ft. The systems were effective for removing a variety of contaminants such as lubricating oils, cutting oils, grease, alcohol residue, biological films, and silicone. The system was effective on steel, aluminum, and carbon phenolic substrates.

Taguchi Experimental Design for Cleaning PWAs with Ball Grid Arrays

NASA Technical Reports Server (NTRS)

Bonner, J. K.; Mehta, A.; Walton, S.

1997-01-01

Ball grid arrays (BGAs), and other area array packages, are becoming more prominent as a way to increase component pin count while avoiding the manufacturing difficulties inherent in processing quad flat packs (QFPs)...Cleaning printed wiring assemblies (PWAs) with BGA components mounted on the surface is problematic...Currently, a low flash point semi-aqueous material, in conjunction with a batch cleaning unit, is being used to clean PWAs. The approach taken at JPL was to investigate the use of (1) semi-aqueous materials having a high flash point and (2) aqueous cleaning involving a saponifier.

CleanFleet final report. Volume 1, summary

DOT National Transportation Integrated Search

1995-12-01

The South Coast Alternative Fuels Demonstration, called CleanFleet, was conducted in the Los Angeles area from April 1992 through September 1994. The demonstration consisted of 111 package delivery vans operating on five alternative fuels and the con...

Semiconductor Cubing

NASA Technical Reports Server (NTRS)

1996-01-01

Through Goddard Space Flight Center and Jet Propulsion Laboratory Small Business Innovation Research contracts, Irvine Sensors developed a three-dimensional memory system for a spaceborne data recorder and other applications for NASA. From these contracts, the company created the Memory Short Stack product, a patented technology for stacking integrated circuits that offers higher processing speeds and levels of integration, and lower power requirements. The product is a three-dimensional semiconductor package in which dozens of integrated circuits are stacked upon each other to form a cube. The technology is being used in various computer and telecommunications applications.

Submillimeter Spectroscopic Diagnostics in Semiconductor Processing Plasmas

NASA Astrophysics Data System (ADS)

Helal, Yaser H.; Neese, Christopher F.; De Lucia, Frank C.; Ewing, Paul R.; Stout, Phillip J.; Walker, Quentin; Armacost, Michael D.

2014-06-01

Submillimeter absorption spectroscopy was used to study semiconductor processing plasmas. Abundances and temperatures of molecules, radicals, and ions can be determined without altering any of the properties of the plasma. The behavior of these measurements provides useful applications in monitoring process steps. A summary of such applications will be presented, including etching and cleaning endpoint detection.

Power module packaging with double sided planar interconnection and heat exchangers

DOEpatents

Liang, Zhenxian; Marlino, Laura D.; Ning, Puqi; Wang, Fei

2015-05-26

A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.

Packaging films for electronic and space-related hardware

NASA Astrophysics Data System (ADS)

Shon, E. M.; Hamberg, O.

1985-08-01

Flexible packaging films are used to bag and/or wrap precision cleaned electronic or space hardware to protect them from environmental degradation during shipping and storage. Selection of packaging films depends on a knowledge of product requirements and packaging film characteristics. The literature presently available on protective packaging films has been updated to include new materials and to amplify space-related applications. Presently available packaging film materials are compared for their various characteristics: electrostatic discharge (ESD) control, flame retardancy, water vapor transmission rate, particulate shedding, molecular contamination, and transparency. The tradeoff between product requirements and the characteristics of the packaging films available are discussed. Selection considerations are given for the application of specific materials of space hardware-related applications. Applications for intimate, environmental, and electrostatic protective packaging are discussed.

Hybrid semiconductor fiber lasers for telecommunications

NASA Astrophysics Data System (ADS)

Khalili, Alireza

2006-12-01

Highly stable edge emitting semiconductor lasers are of utmost importance in most telecommunications applications where high-speed data transmission sets strict limits on the purity of the laser signal. Unfortunately, most edge emitting semiconductor lasers, unlike gaseous or solid-state laser sources, operate with many closely spaced axial modes, which accounts for the observed instability and large spikes in the output spectrum of such lasers. Consequently, in most telecom applications distributed feedback (DFB) or distributed Bragg reflector (DBR) techniques are used to ensure stability and single-frequency operation, further adding to the cost and complexity of such lasers. Additionally, coupling of the highly elliptical output beam of these lasers to singlemode fibers complicates the packaging procedure and sub-micron alignment of various optical components is often necessary. Utilizing the evanescent coupling between a semiconductor antiresonant reflecting optical waveguide (ARROW) and a side polished fiber, this thesis presents an alternative side-coupled laser module that eliminates the need for the cumbersome multi-component alignment processes of conventional laser packages, and creates an inherent mode selection mechanism that guarantees singlemode radiation into the fiber without any gratings. We have been able to demonstrate the first side-coupled fiber semiconductor laser in this technology, coupling more than 3mW of power at 850nm directly into a 5/125mum singlemode fiber. This mixed-cavity architecture yields a high thermal stability (˜0.06nm/°C), and negligible spectral spikes are observed. Theoretical background and simulation results, as well as several supplementary materials are also presented to further rationalize the experimental data. A side-coupled light-emitter and pre-amplifier are also proposed and discussed. We also study different architectures for attaining higher efficiency, higher output power, and wavelength tunability in such

Thermally robust semiconductor optical amplifiers and laser diodes

DOEpatents

Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

2002-01-01

A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

Single level microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-12-09

A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The package can be formed of a multilayered LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during cofiring. The microelectronic device can be flip-chip interconnected so that the light-sensitive side is optically accessible through the window. A glob-top encapsulant or protective cover can be used to protect the microelectronic device and electrical interconnections. The result is a compact, low profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device.

Bi-level microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2004-01-06

A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The multilayered package can be formed of a LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded so that the light-sensitive side is optically accessible through the window. The package has at least two levels of circuits for making electrical interconnections to a pair of microelectronic devices. The result is a compact, low-profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device(s).

CleanFleet final report. Volume 4, fuel economy

DOT National Transportation Integrated Search

1995-12-01

The South Coast Alternative Fuels Demonstration, called CleanFleet, was conducted in the Los Angeles area from April 1992 through September 1994. The demonstration consisted of 111 package delivery vans operating on five alternative fuels and the con...

CleanFleet final report. Volume 6, occupational hygiene

DOT National Transportation Integrated Search

1995-12-01

The South Coast Alternative Fuels Demonstration, called CleanFleet, was conducted in the Los Angeles area from April 1992 through September 1994. The demonstration consisted of 111 package delivery vans operating on five alternative fuels and the con...

Microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

An apparatus for packaging of microelectronic devices, including an integral window. The microelectronic device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can include a cofired ceramic frame or body. The package can have an internal stepped structure made of one or more plates, with apertures, which are patterned with metallized conductive circuit traces. The microelectronic device can be flip-chip bonded on the plate to these traces, and oriented so that the light-sensitive side is optically accessible through the window. A cover lid can be attached to the opposite side of the package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed. The package body can be formed by low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. Multiple chips can be located within a single package. The cover lid can include a window. The apparatus is particularly suited for packaging of MEMS devices, since the number of handling steps is greatly reduced, thereby reducing the potential for contamination.

Multilayered Microelectronic Device Package With An Integral Window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2004-10-26

A microelectronic package with an integral window mounted in a recessed lip for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can be formed of a low temperature co-fired ceramic (LTCC) or high temperature cofired ceramic (HTCC) multilayered material, with the integral window being simultaneously joined (e.g. co-fired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that a light-sensitive side is optically accessible through the window. The result is a compact, low profile package, having an integral window mounted in a recessed lip, that can be hermetically sealed.

7 CFR 58.229 - Filler and packaging equipment.

Code of Federal Regulations, 2010 CFR

2010-01-01

... construction and all parts, including valves and filler heads accessible for cleaning. New or replacement equipment should comply with the 3-A Sanitary Standards for equipment for Packaging Dry Milk and Dry Milk...

Precision Cleaning - Path to Premier

NASA Technical Reports Server (NTRS)

Mackler, Scott E.

2008-01-01

ITT Space Systems Division s new Precision Cleaning facility provides critical cleaning and packaging of aerospace flight hardware and optical payloads to meet customer performance requirements. The Precision Cleaning Path to Premier Project was a 2007 capital project and is a key element in the approved Premier Resource Management - Integrated Supply Chain Footprint Optimization Project. Formerly precision cleaning was located offsite in a leased building. A new facility equipped with modern precision cleaning equipment including advanced process analytical technology and improved capabilities was designed and built after outsourcing solutions were investigated and found lacking in ability to meet quality specifications and schedule needs. SSD cleans parts that can range in size from a single threaded fastener all the way up to large composite structures. Materials that can be processed include optics, composites, metals and various high performance coatings. We are required to provide verification to our customers that we have met their particulate and molecular cleanliness requirements and we have that analytical capability in this new facility. The new facility footprint is approximately half the size of the former leased operation and provides double the amount of throughput. Process improvements and new cleaning equipment are projected to increase 1st pass yield from 78% to 98% avoiding $300K+/yr in rework costs. Cost avoidance of $350K/yr will result from elimination of rent, IT services, transportation, and decreased utility costs. Savings due to reduced staff expected to net $4-500K/yr.

Sealed symmetric multilayered microelectronic device package with integral windows

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

A sealed symmetric multilayered package with integral windows for housing one or more microelectronic devices. The devices can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayered package can be formed of a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the windows being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. The microelectronic devices can be flip-chip bonded and oriented so that the light-sensitive sides are optically accessible through the windows. The result is a compact, low-profile, sealed symmetric package, having integral windows that can be hermetically-sealed.

Defect printability for high-exposure dose advanced packaging applications

NASA Astrophysics Data System (ADS)

Mikles, Max; Flack, Warren; Nguyen, Ha-Ai; Schurz, Dan

2003-12-01

Pellicles are used in semiconductor lithography to minimize printable defects and reduce reticle cleaning frequency. However, there are a growing number of microlithography applications, such as advanced packaging and nanotechnology, where it is not clear that pellicles always offer a significant benefit. These applications have relatively large critical dimensions and require ultra thick photoresists with extremely high exposure doses. Given that the lithography is performed in Class 100 cleanroom conditions, it is possible that the risk of defects from contamination is sufficiently low that pellicles would not be required on certain process layer reticles. The elimination of the pellicle requirement would provide a cost reduction by saving the original pellicle cost and eliminating future pellicle replacement and repair costs. This study examines the imaging potential of defects with reticle patterns and processes typical for gold-bump and solder-bump advanced packaging lithography. The test reticle consists of 30 to 90 μm octagonal contact patterns representative of advanced packaging reticles. Programmed defects are added that represent the range of particle sizes (3 to 30 μm) normally protected by the pellicle and that are typical of advanced packaging lithography cleanrooms. The reticle is exposed using an Ultratech Saturn Spectrum 300e2 1X stepper on wafers coated with a variety of ultra thick (30 to 100 μm) positive and negative-acting photoresists commonly used in advanced packaging. The experimental results show that in many cases smaller particles continue to be yield issues for the feature size and density typical of advanced packaging processes. For the two negative photoresists studied it appears that a pellicle is not required for protection from defects smaller than 10 to 15 μm depending on the photoresist thickness. Thus the decision on pellicle usage for these materials would need to be made based on the device fabrication process and the

Process waste assessment: Petroleum jelly removal from semiconductor die using trichloroethylene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Curtin, D.P.

The process analyzed involves non-production, laboratory environment use of trichloroethylene for the cleaning of semiconductor devices. The option selection centered on the replacement of the trichloroethylene with a non-hazardous material. This process waste assessment was performed as part of a pilot project.

CleanFleet final report. Volume 5, employee attitude assessment

DOT National Transportation Integrated Search

1995-12-01

The South Coast Alternative Fuels Demonstration, called CleanFleet, was conducted in the Los Angeles area from April 1992 through September 1994. The demonstration consisted of 111 package delivery vans operating on five alternative fuels and the con...

Reconditioning of semiconductor substrates to remove photoresist during semiconductor device fabrication

DOEpatents

Farino, Anthony J.

2004-01-27

A method for reconditioning the surface of a semiconductor substrate to remove an unwanted (i.e. defective) layer of photoresist is disclosed. The method adapts a conventional automated spinner which is used to rotate the substrate at high speed while a stream of a first solvent (e.g. acetone) is used to dissolve the photoresist. A stream of a second solvent (e.g. methanol) is then used to clean the substrate at a lower speed, with the substrate being allowed to dry with continued rotation. The method of the present invention can be used within a photolithography track so that the substrates need never leave the track for reconditioning.

Contact allergens and irritants in household washing and cleaning products.

PubMed

Magnano, Michela; Silvani, Simonetta; Vincenzi, Colombina; Nino, Massimiliano; Tosti, Antonella

2009-12-01

Household cleaning products often contain potential allergens and irritants but allergic contact dermatitis from these products in general consumers is rarely reported in the literature. The purpose of this study was to evaluate the presence of irritants and allergens as indicated on the labels or on the product information found on the website of household cleaning products marketed in Italy. We examined the labels and the product information of 291 liquid household washing and cleaning products, including 43 washing-up liquids, 63 laundry detergents, 61 fabric conditioners, 47 spray detergents, and 77 hard surface cleaning products. We obtained the data from the product information found on the websites for 263 products and directly on the product packages for 28 products. For each product we specifically recorded the presence of surfactants, preservatives, and fragrances listed in Annex III of Directive 76/768/EEC. The websites of two Italian brands do not respect EU regulations as they provide product information only with bar codes of the products. Preservatives and fragrances are the main allergens declared in the label of household cleaning products with methylchloroisothiazolinone/methylisothiazolinone (MCI/MI) listed in 35.7% and limonene in 43.6% of the products. Surfactants were listed in 16.5% of the studied products. Our study shows that household cleaning products in Italian market contain several allergens, particularly preservatives and fragrances. For consumers, at least in Italy, it may not be easy to retrieve product information from the website for two widely sold brands. The information had to be taken from the actual package.

Extreme temperature packaging: challenges and opportunities

NASA Astrophysics Data System (ADS)

Johnson, R. Wayne

2016-05-01

Consumer electronics account for the majority of electronics manufactured today. Given the temperature limits of humans, consumer electronics are typically rated for operation from -40°C to +85°C. Military applications extend the range to -65°C to +125°C while underhood automotive electronics may see +150°C. With the proliferation of the Internet of Things (IoT), the goal of instrumenting (sensing, computation, transmission) to improve safety and performance in high temperature environments such as geothermal wells, nuclear reactors, combustion chambers, industrial processes, etc. requires sensors, electronics and packaging compatible with these environments. Advances in wide bandgap semiconductors (SiC and GaN) allow the fabrication of high temperature compatible sensors and electronics. Integration and packaging of these devices is required for implementation into actual applications. The basic elements of packaging are die attach, electrical interconnection and the package or housing. Consumer electronics typically use conductive adhesives or low melting point solders for die attach, wire bonds or low melting solder for electrical interconnection and epoxy for the package. These materials melt or decompose in high temperature environments. This paper examines materials and processes for high temperature packaging including liquid transient phase and sintered nanoparticle die attach, high melting point wires for wire bonding and metal and ceramic packages. The limitations of currently available solutions will also be discussed.

Chip packaging technique

NASA Technical Reports Server (NTRS)

Jayaraj, Kumaraswamy (Inventor); Noll, Thomas E. (Inventor); Lockwood, Harry F. (Inventor)

2001-01-01

A hermetically sealed package for at least one semiconductor chip is provided which is formed of a substrate having electrical interconnects thereon to which the semiconductor chips are selectively bonded, and a lid which preferably functions as a heat sink, with a hermetic seal being formed around the chips between the substrate and the heat sink. The substrate is either formed of or includes a layer of a thermoplastic material having low moisture permeability which material is preferably a liquid crystal polymer (LCP) and is a multiaxially oriented LCP material for preferred embodiments. Where the lid is a heat sink, the heat sink is formed of a material having high thermal conductivity and preferably a coefficient of thermal expansion which substantially matches that of the chip. A hermetic bond is formed between the side of each chip opposite that connected to the substrate and the heat sink. The thermal bond between the substrate and the lid/heat sink may be a pinched seal or may be provided, for example by an LCP frame which is hermetically bonded or sealed on one side to the substrate and on the other side to the lid/heat sink. The chips may operate in the RF or microwave bands with suitable interconnects on the substrate and the chips may also include optical components with optical fibers being sealed into the substrate and aligned with corresponding optical components to transmit light in at least one direction. A plurality of packages may be physically and electrically connected together in a stack to form a 3D array.

Wafer-level packaging with compression-controlled seal ring bonding

DOEpatents

Farino, Anthony J

2013-11-05

A device may be provided in a sealed package by aligning a seal ring provided on a first surface of a first semiconductor wafer in opposing relationship with a seal ring that is provided on a second surface of a second semiconductor wafer and surrounds a portion of the second wafer that contains the device. Forcible movement of the first and second wafer surfaces toward one another compresses the first and second seal rings against one another. A physical barrier against the movement, other than the first and second seal rings, is provided between the first and second wafer surfaces.

CleanFleet final report. Volume 3, vehicle maintenance and durability

DOT National Transportation Integrated Search

1995-12-01

The South Coast Alternative Fuels Demonstration, called CleanFleet, was conducted in the Los Angeles area from April 1992 through September 1994. The demonstration consisted of 111 package delivery vans operating on five alternative fuels and the con...

Book of Knowledge (BOK) for NASA Electronic Packaging Roadmap

NASA Technical Reports Server (NTRS)

Ghaffarian, Reza

2015-01-01

The objective of this document is to update the NASA roadmap on packaging technologies (initially released in 2007) and to present the current trends toward further reducing size and increasing functionality. Due to the breadth of work being performed in the area of microelectronics packaging, this report presents only a number of key packaging technologies detailed in three industry roadmaps for conventional microelectronics and a more recently introduced roadmap for organic and printed electronics applications. The topics for each category were down-selected by reviewing the 2012 reports of the International Technology Roadmap for Semiconductor (ITRS), the 2013 roadmap reports of the International Electronics Manufacturing Initiative (iNEMI), the 2013 roadmap of association connecting electronics industry (IPC), the Organic Printed Electronics Association (OE-A). The report also summarizes the results of numerous articles and websites specifically discussing the trends in microelectronics packaging technologies.

9 CFR 590.548 - Drying, blending, packaging, and heat treatment rooms and facilities.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 9 Animals and Animal Products 2 2011-01-01 2011-01-01 false Drying, blending, packaging, and heat..., blending, packaging, and heat treatment rooms and facilities. (a) General. Processing rooms shall be... vacuum cleaned daily. (c) The heat treatment room shall be of an approved construction and be maintained...

9 CFR 590.548 - Drying, blending, packaging, and heat treatment rooms and facilities.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 9 Animals and Animal Products 2 2013-01-01 2013-01-01 false Drying, blending, packaging, and heat..., blending, packaging, and heat treatment rooms and facilities. (a) General. Processing rooms shall be... vacuum cleaned daily. (c) The heat treatment room shall be of an approved construction and be maintained...

9 CFR 590.548 - Drying, blending, packaging, and heat treatment rooms and facilities.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 9 Animals and Animal Products 2 2012-01-01 2012-01-01 false Drying, blending, packaging, and heat..., blending, packaging, and heat treatment rooms and facilities. (a) General. Processing rooms shall be... vacuum cleaned daily. (c) The heat treatment room shall be of an approved construction and be maintained...

9 CFR 590.548 - Drying, blending, packaging, and heat treatment rooms and facilities.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 9 Animals and Animal Products 2 2014-01-01 2014-01-01 false Drying, blending, packaging, and heat..., blending, packaging, and heat treatment rooms and facilities. (a) General. Processing rooms shall be... vacuum cleaned daily. (c) The heat treatment room shall be of an approved construction and be maintained...

SEMICONDUCTOR TECHNOLOGY A new cleaning process for the metallic contaminants on a post-CMP wafer's surface

NASA Astrophysics Data System (ADS)

Baohong, Gao; Yuling, Liu; Chenwei, Wang; Yadong, Zhu; Shengli, Wang; Qiang, Zhou; Baimei, Tan

2010-10-01

This paper presents a new cleaning process using boron-doped diamond (BDD) film anode electrochemical oxidation for metallic contaminants on polished silicon wafer surfaces. The BDD film anode electrochemical oxidation can efficiently prepare pyrophosphate peroxide, pyrophosphate peroxide can oxidize organic contaminants, and pyrophosphate peroxide is deoxidized into pyrophosphate. Pyrophosphate, a good complexing agent, can form a metal complex, which is a structure consisting of a copper ion, bonded to a surrounding array of two pyrophosphate anions. Three polished wafers were immersed in the 0.01 mol/L CuSO4 solution for 2 h in order to make comparative experiments. The first one was cleaned by pyrophosphate peroxide, the second by RCA (Radio Corporation of America) cleaning, and the third by deionized (DI) water. The XPS measurement result shows that the metallic contaminants on wafers cleaned by the RCA method and by pyrophosphate peroxide is less than the XPS detection limits of 1 ppm. And the wafer's surface cleaned by pyrophosphate peroxide is more efficient in removing organic carbon residues than RCA cleaning. Therefore, BDD film anode electrochemical oxidation can be used for microelectronics cleaning, and it can effectively remove organic contaminants and metallic contaminants in one step. It also achieves energy saving and environmental protection.

Bi-level multilayered microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

A bi-level, multilayered package with an integral window for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayered package can be formed of a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that the light-sensitive side is optically accessible through the window. A second chip can be bonded to the backside of the first chip, with the second chip being wirebonded to the second level of the bi-level package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed.

Hazardous Waste Cleanup: Clean Harbors BTD, LLC in Clarence, New York

EPA Pesticide Factsheets

The Clean Harbors BDT, LLC site was a commercial treatment, storage, and disposal facility that treated reactive hazardous wastes, pressurized waste, pharmaceutical and packaged laboratory chemicals. The facility was initially owned and operated by Wilson-

Effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance

NASA Astrophysics Data System (ADS)

Dietze, Uwe; Dress, Peter; Waehler, Tobias; Singh, Sherjang; Jonckheere, Rik; Baudemprez, Bart

2011-03-01

Extreme Ultraviolet Lithography (EUVL) is considered the leading lithography technology choice for semiconductor devices at 16nm HP node and beyond. However, before EUV Lithography can enter into High Volume Manufacturing (HVM) of advanced semiconductor devices, the ability to guarantee mask integrity at point-of-exposure must be established. Highly efficient, damage free mask cleaning plays a critical role during the mask manufacturing cycle and throughout the life of the mask, where the absence of a pellicle to protect the EUV mask increases the risk of contamination during storage, handling and use. In this paper, we will present effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance, which employs an intelligent, holistic approach to maximize Mean Time Between Cleans (MBTC) and extend the useful life span of the reticle. The data presented will demonstrate the protection of the capping and absorber layers, preservation of pattern integrity as well as optical and mechanical properties to avoid unpredictable CD-linewidth and overlay shifts. Experiments were performed on EUV blanks and pattern masks using various process conditions. Conditions showing high particle removal efficiency (PRE) and minimum surface layer impact were then selected for durability studies. Surface layer impact was evaluated over multiple cleaning cycles by means of UV reflectivity metrology XPS analysis and wafer prints. Experimental results were compared to computational models. Mask life time predictions where made using the same computational models. The paper will provide a generic overview of the cleaning sequence which yielded best results, but will also provide recommendations for an efficient in-fab mask maintenance scheme, addressing handling, storage, cleaning and inspection.

Multilayered microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-01-01

An apparatus for packaging of microelectronic devices is disclosed, wherein the package includes an integral window. The microelectronic device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can comprise, for example, a cofired ceramic frame or body. The package has an internal stepped structure made of a plurality of plates, with apertures, which are patterned with metallized conductive circuit traces. The microelectronic device can be flip-chip bonded on the plate to these traces, and oriented so that the light-sensitive side is optically accessible through the window. A cover lid can be attached to the opposite side of the package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed. The package body can be formed by low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. Multiple chips can be located within a single package, according to some embodiments. The cover lid can include a window. The apparatus is particularly suited for packaging of MEMS devices, since the number of handling steps is greatly reduced, thereby reducing the potential for contamination. The integral window can further include a lens for optically transforming light passing through the window. The package can include an array of binary optic lenslets made integral with the window. The package can include an electrically-switched optical modulator, such as a lithium niobate window attached to the package, for providing a very fast electrically-operated shutter.

Water splitting on semiconductor catalysts under visible-light irradiation.

PubMed

Navarro Yerga, Rufino M; Alvarez Galván, M Consuelo; del Valle, F; Villoria de la Mano, José A; Fierro, José L G

2009-01-01

Sustainable hydrogen production is a key target for the development of alternative, future energy systems that will provide a clean and affordable energy supply. The Sun is a source of silent and precious energy that is distributed fairly all over the Earth daily. However, its tremendous potential as a clean, safe, and economical energy source cannot be exploited unless the energy is accumulated or converted into more useful forms. The conversion of solar energy into hydrogen via the water-splitting process, assisted by photo-semiconductor catalysts, is one of the most promising technologies for the future because large quantities of hydrogen can potentially be generated in a clean and sustainable manner. This Minireview provides an overview of the principles, approaches, and research progress on solar hydrogen production via the water-splitting reaction on photo-semiconductor catalysts. It presents a survey of the advances made over the last decades in the development of catalysts for photochemical water splitting under visible-light irradiation. The Minireview also analyzes the energy requirements and main factors that determine the activity of photocatalysts in the conversion of water into hydrogen and oxygen using sunlight. Remarkable progress has been made since the pioneering work by Fujishima and Honda in 1972, but he development of photocatalysts with improved efficiencies for hydrogen production from water using solar energy still faces major challenges. Research strategies and approaches adopted in the search for active and efficient photocatalysts, for example through new materials and synthesis methods, are presented and analyzed.

Clean Room Apparel

NASA Technical Reports Server (NTRS)

1989-01-01

American Hospital Supply Corporation (AHSC), Baxter Healthcare Corporation's predecessor, used the NASA informational base on contamination control technology to improve industrial contamination control technology. When a study determined that microscopic body particles escaping through tiny "windows" in woven garments worn by workers were the greatest source of contamination, AHSC developed TYVEK. This non-woven material filters 99% of all particulate matter larger than half a micron. Baxter Healthcare added a polyimide coating which seals and ties down any loose fibers, providing greater durability. Stress points along seams have been minimized to make the garment almost tearproof. Micro-Clean 212 garments are individually packaged and disposable.

Alternative Packaging for Back-Illuminated Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2009-01-01

An alternative scheme has been conceived for packaging of silicon-based back-illuminated, back-side-thinned complementary metal oxide/semiconductor (CMOS) and charge-coupled-device image-detector integrated circuits, including an associated fabrication process. This scheme and process are complementary to those described in "Making a Back-Illuminated Imager With Back-Side Connections" (NPO-42839), NASA Tech Briefs, Vol. 32, No. 7 (July 2008), page 38. To avoid misunderstanding, it should be noted that in the terminology of imaging integrated circuits, "front side" or "back side" does not necessarily refer to the side that, during operation, faces toward or away from a source of light or other object to be imaged. Instead, "front side" signifies that side of a semiconductor substrate upon which the pixel pattern and the associated semiconductor devices and metal conductor lines are initially formed during fabrication, and "back side" signifies the opposite side. If the imager is of the type called "back-illuminated," then the back side is the one that faces an object to be imaged. Initially, a back-illuminated, back-side-thinned image-detector is fabricated with its back side bonded to a silicon handle wafer. At a subsequent stage of fabrication, the front side is bonded to a glass wafer (for mechanical support) and the silicon handle wafer is etched away to expose the back side. The frontside integrated circuitry includes metal input/output contact pads, which are rendered inaccessible by the bonding of the front side to the glass wafer. Hence, one of the main problems is to make the input/output contact pads accessible from the back side, which is ultimately to be the side accessible to the external world. The present combination of an alternative packaging scheme and associated fabrication process constitute a solution of the problem.

New solar cell and clean unit system platform (CUSP) for earth and environmental science

NASA Astrophysics Data System (ADS)

Ishibashi, A.; Matsuoka, T.; Enomoto, R.; Yasutake, M.

2017-11-01

We have investigated InGaN-based multi-striped orthogonal photon-photocarrier propagation solar cell (MOP3SC) in which sunlight propagates in a direction being orthogonal to that of photocarriers generated by the sunlight. Thanks to the orthogonality, in MOP3SC, absorption of the sunlight and collection of the photocarriers can be simultaneously and independently optimized with no trade-off. Furthermore, by exploiting the degree of freedom along the photon propagation and using multi-semiconductor stripes in which the incoming photons first encounter the widest gap semiconductor, and the narrowest at last, we can convert the whole solar spectrum into electricity resulting in the high conversion efficiency. For processing MOP3SC, we have developed Clean Unit System Platform (CUSP), which turns out to be able to serve as clean versatile environment having low power-consumption and high cost-performance. CUSP is suitable not only for processing devices, but also for cross-disciplinary fields, including medical/hygienic applications.

Pre-Packaged Commercial PACE Financing Solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wallander, Michael

The objective of this project was to demonstrate a more streamlined method for facilitating commercial property assessed clean energy (PACE) retrofits. The Recipient aimed to prove that energy efficiency performance of simple, pre-packaged technologies (e.g., lighting and heating, ventilation and air conditioning (HVAC)) can be accurately estimated without the need for a detailed energy audit. A successful project would inspire consumer confidence in undertaking cost-effective retrofits.

Industrial Technologies Program - Manufacturing Workforce for a Clean Energy Economy (Green Jobs)

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-05-01

Making the transition to a clean energy economy will strengthen our energy security, improve the environment, and create jobs. In 2009, Congress passed a stimulus package to help jump-start all sectors of the U.S. economy and accelerate this transition.

[Effect of grain-bean package, grain-bean package dietary fiber and single whole grain dietary fiber on dyslipidemia rats].

PubMed

Liu, Yang; Zhai, Chengkai; Sun, Guiju; Zhang, Hong; Jiang, Mingxia; Zhang, Haifeng; Guo, Junling; Lan, Xi

2014-05-01

To observe and compare the effects of grain-bean package, dietary fiber (DF) extracted from grain-bean package, and DF from grain corn on the blood lipids and fatty acid synthase (FAS) activity in high-fat, high-cholesterol feeding induced dyslipidemia rats, and observe its effects on regulation of sterol regulatory element protein-1c (SREBP-1c) mRNA expression in rat liver. Consolidation 50 SD rats of clean grade feeding adaptation for one week, randomly assigned into normal control group, hyperlipidemia model group, grain-bean package group, grain-bean package DF group and grain corn group. Feed with corresponding diets for 8 weeks, and measure the total cholesterol (TC), triglyceridaemia (TG), high density lipoprotein cholesterol (HDL-C), fasting blood glucose (FBG), FAS, SREBP-1c mRNA of all groups. Compared with control group, TC, TG, FBG levels of hyperlipidemia model group were significantly increased (P < 0.05). Compared with model group, TC, TG, FBG levels of grain-bean package group, grain-bean package DF group were significantly decreased, HDL-C levels significantly increased, and activity of FAS, regulation of SREBP-1c were significantly decreased (P < 0.05). The Grain-bean package dietary fiber can improve blood lipids levels of dyslipidemia rats, and decrease FAS activity and SREBP-1c mRNA expression.

Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

PubMed

Mankin, Max N; Day, Robert W; Gao, Ruixuan; No, You-Shin; Kim, Sun-Kyung; McClelland, Arthur A; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

2015-07-08

Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial heterostructures challenging. Nanowires (NWs) are a promising platform for the integration of Si and compound semiconductors since their limited surface area can alleviate such material mismatch issues. Here, we demonstrate facet-selective growth of cadmium sulfide (CdS) on Si NWs. Aberration-corrected transmission electron microscopy analysis shows that crystalline CdS is grown epitaxially on the {111} and {110} surface facets of the Si NWs but that the Si{113} facets remain bare. Further analysis of CdS on Si NWs grown at higher deposition rates to yield a conformal shell reveals a thin oxide layer on the Si{113} facet. This observation and control experiments suggest that facet-selective growth is enabled by the formation of an oxide, which prevents subsequent shell growth on the Si{113} NW facets. Further studies of facet-selective epitaxial growth of CdS shells on micro-to-mesoscale wires, which allows tuning of the lateral width of the compound semiconductor layer without lithographic patterning, and InP shell growth on Si NWs demonstrate the generality of our growth technique. In addition, photoluminescence imaging and spectroscopy show that the epitaxial shells display strong and clean band edge emission, confirming their high photonic quality, and thus suggesting that facet-selective epitaxy on NW substrates represents a promising route to integration of compound semiconductors on Si.

Testing methodologies and systems for semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Wieckowski, Michael

Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable

Tantalum-based semiconductors for solar water splitting.

PubMed

Zhang, Peng; Zhang, Jijie; Gong, Jinlong

2014-07-07

Solar energy utilization is one of the most promising solutions for the energy crises. Among all the possible means to make use of solar energy, solar water splitting is remarkable since it can accomplish the conversion of solar energy into chemical energy. The produced hydrogen is clean and sustainable which could be used in various areas. For the past decades, numerous efforts have been put into this research area with many important achievements. Improving the overall efficiency and stability of semiconductor photocatalysts are the research focuses for the solar water splitting. Tantalum-based semiconductors, including tantalum oxide, tantalate and tantalum (oxy)nitride, are among the most important photocatalysts. Tantalum oxide has the band gap energy that is suitable for the overall solar water splitting. The more negative conduction band minimum of tantalum oxide provides photogenerated electrons with higher potential for the hydrogen generation reaction. Tantalates, with tunable compositions, show high activities owning to their layered perovskite structure. (Oxy)nitrides, especially TaON and Ta3N5, have small band gaps to respond to visible-light, whereas they can still realize overall solar water splitting with the proper positions of conduction band minimum and valence band maximum. This review describes recent progress regarding the improvement of photocatalytic activities of tantalum-based semiconductors. Basic concepts and principles of solar water splitting will be discussed in the introduction section, followed by the three main categories regarding to the different types of tantalum-based semiconductors. In each category, synthetic methodologies, influencing factors on the photocatalytic activities, strategies to enhance the efficiencies of photocatalysts and morphology control of tantalum-based materials will be discussed in detail. Future directions to further explore the research area of tantalum-based semiconductors for solar water splitting

The Ettention software package.

PubMed

Dahmen, Tim; Marsalek, Lukas; Marniok, Nico; Turoňová, Beata; Bogachev, Sviatoslav; Trampert, Patrick; Nickels, Stefan; Slusallek, Philipp

2016-02-01

We present a novel software package for the problem "reconstruction from projections" in electron microscopy. The Ettention framework consists of a set of modular building-blocks for tomographic reconstruction algorithms. The well-known block iterative reconstruction method based on Kaczmarz algorithm is implemented using these building-blocks, including adaptations specific to electron tomography. Ettention simultaneously features (1) a modular, object-oriented software design, (2) optimized access to high-performance computing (HPC) platforms such as graphic processing units (GPU) or many-core architectures like Xeon Phi, and (3) accessibility to microscopy end-users via integration in the IMOD package and eTomo user interface. We also provide developers with a clean and well-structured application programming interface (API) that allows for extending the software easily and thus makes it an ideal platform for algorithmic research while hiding most of the technical details of high-performance computing. Copyright © 2015 Elsevier B.V. All rights reserved.

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

PubMed

Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

2018-04-12

Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

Health-related external cost assessment in Europe: methodological developments from ExternE to the 2013 Clean Air Policy Package.

PubMed

van der Kamp, Jonathan; Bachmann, Till M

2015-03-03

"Getting the prices right" through internalizing external costs is a guiding principle of environmental policy making, one recent example being the EU Clean Air Policy Package released at the end of 2013. It is supported by impact assessments, including monetary valuation of environmental and health damages. For over 20 years, related methodologies have been developed in Europe in the Externalities of Energy (ExternE) project series and follow-up activities. In this study, we aim at analyzing the main methodological developments over time from the 1990s until today with a focus on classical air pollution-induced human health damage costs. An up-to-date assessment including the latest European recommendations is also applied. Using a case from the energy sector, we identify major influencing parameters: differences in exposure modeling and related data lead to variations in damage costs of up to 21%; concerning risk assessment and monetary valuation, differences in assessing long-term exposure mortality risks together with assumptions on particle toxicity explain most of the observed changes in damage costs. These still debated influencing parameters deserve particular attention when damage costs are used to support environmental policy making.

Clean Room in the Zero Gravity Research Facility

NASA Image and Video Library

1968-07-21

A technician prepares a test sample in the Zero Gravity Research Facility clean room at the National Aeronautics and Space Administration (NASA) Lewis Research Center. The Zero Gravity Research Facility contained a drop tower which provided five seconds of microgravity during freefall in its 450-foot deep vacuum chamber. The facility has been used for a variety of studies relating to the behavior of fluids and flames in microgravity. During normal operations, a cylindrical 3-foot diameter and 11-foot long vehicle was used to house the experiments, instrumentation, and high speed cameras. The 4.5-foot long and 1.5-foot wide rectangular vehicle, seen in this photograph, was used less frequently. A 3-foot diameter orb was used for the special ten-second drops in which the package was pneumatically shot to the top of the tower then dropped. The facility also contained a control room, shop offices, tool and equipment rooms, and this clean room. The 242.5-foot long and 19.5-foot wide clean room was equipped with specialized cleaning equipment. In the 1960s the room was rated as a class 10,000 clean room, but I was capable of meeting the class 100 requirements. The room included a fume hood, ultrasonic cleaner, and a laminar flow station which operated as a class 100 environment. The environment in the clean room was maintained at 71° F and a relative humidity of 45- percent.

SEMICONDUCTOR TECHNOLOGY: GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution

NASA Astrophysics Data System (ADS)

Zaijin, Li; Liming, Hu; Ye, Wang; Ye, Yang; Hangyu, Peng; Jinlong, Zhang; Li, Qin; Yun, Liu; Lijun, Wang

2010-03-01

A novel process for the wet cleaning of GaAs surface is presented. It is designed for technological simplicity and minimum damage generated within the GaAs surface. It combines GaAs cleaning with three conditions consisting of (1) removal of thermodynamically unstable species and (2) surface oxide layers must be completely removed after thermal cleaning, and (3) a smooth surface must be provided. Revolving ultrasonic atomization technology is adopted in the cleaning process. At first impurity removal is achieved by organic solvents; second NH4OH:H2O2:H2O = 1:1:10 solution and HCl: H2O2:H2O = 1:1:20 solution in succession to etch a very thin GaAs layer, the goal of the step is removing metallic contaminants and forming a very thin oxidation layer on the GaAs wafer surface; NH4OH:H2O = 1:5 solution is used as the removed oxide layers in the end. The effectiveness of the process is demonstrated by the operation of the GaAs wafer. Characterization of the oxide composition was carried out by X-ray photoelectron spectroscopy. Metal-contamination and surface morphology was observed by a total reflection X-ray fluorescence spectroscopy and atomic force microscope. The research results show that the cleaned surface is without contamination or metal contamination. Also, the GaAs substrates surface is very smooth for epitaxial growth using the rotary ultrasonic atomization technology.

Aluminum-Scandium: A Material for Semiconductor Packaging

NASA Astrophysics Data System (ADS)

Geissler, Ute; Thomas, Sven; Schneider-Ramelow, Martin; Mukhopadhyay, Biswajit; Lang, Klaus-Dieter

2016-10-01

A well-known aluminum-scandium (Al-Sc) alloy, already used in lightweight sports equipment, is about to be established for use in electronic packaging. One application for Al-Sc alloy is manufacture of bonding wires. The special feature of the alloy is its ability to harden by precipitation. The new bonding wires with electrical conductivity similar to pure Al wires can be processed on common wire bonders for aluminum wedge/wedge (w/w) bonding. The wires exhibit very fine-grained microstructure. Small Al3Sc particles are the main reason for its high strength and prevent recrystallization and grain growth at higher temperatures (>150°C). After the wire-bonding process, the interface is well closed. Reliability investigations by active power cycling demonstrated considerably improved lifetime compared with pure Al heavy wires. Furthermore, the Al-Sc alloy was sputter-deposited onto silicon wafer to test it as chip metallization in copper (Cu) ball/wedge bonding technology. After deposition, the layers exhibited fine-grained columnar structure and small coherent Al3Sc particles with dimensions of a few nanometers. These particles inhibit softening processes such as Al splashing in fine wire bonding processes and increase the thickness of remnant Al under the copper balls to 85% of the initial thickness.

Low energy positrons as probes of reconstructed semiconductor surfaces.

NASA Astrophysics Data System (ADS)

Fazleev, Nail G.; Weiss, Alex H.

2007-03-01

Positron probes of semiconductor surfaces that play a fundamental role in modern science and technology are capable to non-destructively provide information that is both unique to the probe and complimentary to that extracted using other more standard techniques. We discuss recent progress in studies of the reconstructed Si(100), Si(111), Ge(100), and Ge(111) surfaces, clean and exposed to hydrogen and oxygen, using a surface characterization technique, Positron-Annihilation-Induced Auger-Electron Spectroscopy (PAES). Experimental PAES results are analyzed by performing first-principles calculations of positron surface states and annihilation probabilities of surface-trapped positrons with relevant core electrons for the reconstructed surfaces, taking into account discrete lattice effects, the electronic reorganization due to bonding, and charge redistribution effects at the surface. Effects of the hydrogen and oxygen adsorption on semiconductor surfaces on localization of positron surface state wave functions and annihilation characteristics are also analyzed. Theoretical calculations confirm that PAES intensities, which are proportional to annihilation probabilities of the surface trapped positrons that results in a core hole, are sensitive to the crystal face, surface structure and elemental content of the semiconductors.

Emission characteristics of volatile organic compounds from semiconductor manufacturing.

PubMed

Chein, HungMin; Chen, Tzu Ming

2003-08-01

A huge amount of volatile organic compounds (VOCs) is produced and emitted with waste gases from semiconductor manufacturing processes, such as cleaning, etching, and developing. VOC emissions from semiconductor factories located at Science-Based Industrial Park, Hsin-chu, Taiwan, were measured and characterized in this study. A total of nine typical semiconductor fabricators (fabs) were monitored over a 12-month period (October 2000-September 2001). A flame ionization analyzer was employed to measure the VOC emission rate continuously in a real-time fashion. The amount of chemical use was adopted from the data that were reported to the Environmental Protection Bureau in Hsin-chu County as per the regulation of the Taiwan Environmental Protection Administration. The VOC emission factor, defined as the emission rate (kg/month) divided by the amount of chemical use (L/month), was determined to be 0.038 +/- 0.016 kg/L. A linear regression equation is proposed to fit the data with the correlation coefficient (R2)=0.863. The emission profiles of VOCs, which were drawn using the gas chromatograph/mass spectrometer analysis method, show that isopropyl alcohol is the dominant compound in most of the fabs.

Technological and organizational diversity and technical advance in the early history of the American semiconductor industry

NASA Astrophysics Data System (ADS)

Cohen, W.; Holbrook, D.; Klepper, S.

1994-06-01

This study examines the early years of the semiconductor industry and focuses on the roles played by different size firms in technologically innovative processes. A large and diverse pool of firms participated in the growth of the industry. Three related technological areas were chosen for in-depth analysis: integrated circuits, materials technology, and device packaging. Large business producing vacuum tubes dominated the early production of semiconductor devices. As the market for new devices grew during the 1950's, new firms were founded and existing firms from other industries, e.g. aircraft builders and instrument makers, began to pursue semiconductor electronics. Small firms began to cater to the emerging industry by supplying materials and equipment. These firms contributed to the development of certain aspects of one thousand firms that were playing some part in the semiconductor industry.

Keeping an Uphill Edge: Managing Cleaning Behaviors at a Ski Shop

ERIC Educational Resources Information Center

Doll, Jessica; Livesey, Josh; McHaffie, Elizabeth; Ludwig, Timothy D.

2007-01-01

Several behaviors in a ski shop were identified as being deficient using Austin's Performance Diagnostic Checklist (2000) and Daniels and Daniels' PIC/NIC Analysis (2004). During a 4-week baseline, 7 cleaning behaviors were monitored and 5 were subsequently targeted in an intervention package using an ABC design. The intervention included: a task…

Optical Design of Plant Canopy Measurement System and Fabrication of Two-Dimensional High-Speed Metal-Semiconductor-Metal Photodetector Arrays

NASA Technical Reports Server (NTRS)

Sarto, Anthony; VanZeghbroeck, Bart; Vanderbilt, Vern C.

1996-01-01

Electrical and optical designs for the prototype plant canopy architecture measurement system, including specified component and parts lists, are presented. Six single Metal-Semiconductor-Metal (MSM) detectors are mounted in high-speed packages.

Key techniques for space-based solar pumped semiconductor lasers

NASA Astrophysics Data System (ADS)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

Active and intelligent packaging: The indication of quality and safety.

PubMed

Janjarasskul, Theeranun; Suppakul, Panuwat

2018-03-24

The food industry has been under growing pressure to feed an exponentially increasing world population and challenged to meet rigorous food safety law and regulation. The plethora of media consumption has provoked consumer demand for safe, sustainable, organic, and wholesome products with "clean" labels. The application of active and intelligent packaging has been commercially adopted by food and pharmaceutical industries as a solution for the future for extending shelf life and simplifying production processes; facilitating complex distribution logistics; reducing, if not eliminating the need for preservatives in food formulations; enabling restricted food packaging applications; providing convenience, improving quality, variety and marketing features; as well as providing essential information to ensure consumer safety. This chapter reviews innovations of active and intelligent packaging which advance packaging technology through both scavenging and releasing systems for shelf life extension, and through diagnostic and identification systems for communicating quality, tracking and brand protection.

Automated imprint mask cleaning for step-and-flash imprint lithography

NASA Astrophysics Data System (ADS)

Singh, Sherjang; Chen, Ssuwei; Selinidis, Kosta; Fletcher, Brian; McMackin, Ian; Thompson, Ecron; Resnick, Douglas J.; Dress, Peter; Dietze, Uwe

2009-03-01

Step-and-Flash Imprint Lithography (S-FIL) is a promising lithography strategy for semiconductor manufacturing at device nodes below 32nm. The S-FIL 1:1 pattern transfer technology utilizes a field-by-field ink jet dispense of a low viscosity liquid resist to fill the relief pattern of the device layer etched into the glass mask. Compared to other sub 40nm CD lithography methods, the resulting high resolution, high throughput through clustering, 3D patterning capability, low process complexity, and low cost of ownership (CoO) of S-FIL makes it a widely accepted technology for patterned media as well as a promising mainstream option for future CMOS applications. Preservation of mask cleanliness is essential to avoid risk of repeated printing of defects. The development of mask cleaning processes capable of removing particles adhered to the mask surface without damaging the mask is critical to meet high volume manufacturing requirements. In this paper we have presented various methods of residual (cross-linked) resist removal and final imprint mask cleaning demonstrated on the HamaTech MaskTrack automated mask cleaning system. Conventional and non-conventional (acid free) methods of particle removal have been compared and the effect of mask cleaning on pattern damage and CD integrity is also studied.

Ultrasonic cleaning of conveyor belt materials using Listeria monocytogenes as a model organism.

PubMed

Tolvanén, Riina; Lunden, Janne; Korkeala, Hannu; Wirtanen, Gun

2007-03-01

Persistent Listeria monocytogenes contamination of food industry equipment is a difficult problem to solve. Ultrasonic cleaning offers new possibilities for cleaning conveyors and other equipment that are not easy to clean. Ultrasonic cleaning was tested on three conveyor belt materials: polypropylene, acetal, and stainless steel (cold-rolled, AISI 304). Cleaning efficiency was tested at two temperatures (30 and 45 degrees C) and two cleaning times (30 and 60 s) with two cleaning detergents (KOH, and NaOH combined with KOH). Conveyor belt materials were soiled with milk-based soil and L. monocytogenes strains V1, V3, and B9, and then incubated for 72 h to attach bacteria to surfaces. Ultrasonic cleaning treatments reduced L. monocytogenes counts on stainless steel 4.61 to 5.90 log units; on acetal, 3.37 to 5.55 log units; and on polypropylene, 2.31 to 4.40 log units. The logarithmic reduction differences were statistically analyzed by analysis of variance using Statistical Package for the Social Sciences software. The logarithmic reduction was significantly greater in stainless steel than in plastic materials (P < 0.001 for polypropylene, P = 0.023 for acetal). Higher temperatures enhanced the cleaning efficiency in tested materials. No significant difference occurred between cleaning times. The logarithmic reduction was significantly higher (P = 0.013) in cleaning treatments with potassium hydroxide detergent. In this study, ultrasonic cleaning was efficient for cleaning conveyor belt materials.

Microbial barrier assessment of Tyvek stopper packaging for rubber closures.

PubMed

Moldenhauer, J E; Bass, S A; Kupinski, M J; Walters, M L; Rubio, S L

1996-01-01

Two types of Tyvek and high density polyethylene or polypropylene packaging used for sterilization of rubber closures were evaluated for Microbial Barrier properties. The packaging evaluated was "Ready to Sterilize" (1) stoppers and a second test package (Test 2) which was designated as appropriate for a clean room, filled with washed and siliconized stoppers and then heat sealed. Each type of packaging was subjected to three different sterilization temperatures (125 degrees C, 128 degrees C and 131 degrees C) in a production sterilizer (15-18 psi). Following sterilization, a microbial barrier assessment was performed, using Bacillus subtilis niger (ATCC 9372), to determine whether the packaging could maintain a sterile barrier following sterilization. Results of the testing indicated that a microbial barrier was maintained for products in "Ready to Sterilize" packages at 125 degrees C and 128 degrees C. For products sterilized in the Test 2 container a microbial barrier could not be maintained at 128 degrees C, and no further testing was performed. Following sterilization at 131 degrees C physical defects were noted for the "Ready to Sterilize" bag and a microbial barrier could not be maintained.

Following ergonomics guidelines decreases physical and cardiovascular workload during cleaning tasks.

PubMed

Samani, Afshin; Holtermann, Andreas; Søgaard, Karen; Holtermann, Andreas; Madeleine, Pascal

2012-01-01

The aim was to investigate the effect of ergonomics guidelines on muscular activity, postural and cardiovascular load during cleaning. Eighteen cleaners performed 10 min of cleaning tasks in two locations; three min in a laboratory and seven min in a lecture room. All participants performed the task with or without focusing on ergonomics guidelines (ergonomics/non-ergonomics session). Bipolar surface electromyography was recorded bilaterally from upper trapezius and erector spinae muscles. A tri-axial accelerometer package was mounted on the low back (L5-S1) to measure postural changes, and the cardiovascular load was estimated by electrocardiogram. Ergonomics sessions resulted in lower muscular load, a more complex pattern of muscular activity, lower range of motion and angular velocity of the trunk as well as lower cardiovascular load compared with non-ergonomics sessions (p < 0.05). The study highlighted the multiple musculoskeletal and cardiovascular benefits of following ergonomics guidelines during cleaning tasks. This study investigated the effects of following instructive ergonomics guidelines during cleaning tasks (daily curriculum of cleaning including mopping, sweeping, changing trash bins and cleaning of desks and blackboards). Following the ergonomics guidelines reduces the general workload and induces a more complex pattern of muscular activity. The study contributes with novel knowledge concerning ergonomics guidelines and work techniques.

Clean graphene electrodes on organic thin-film devices via orthogonal fluorinated chemistry.

PubMed

Beck, Jonathan H; Barton, Robert A; Cox, Marshall P; Alexandrou, Konstantinos; Petrone, Nicholas; Olivieri, Giorgia; Yang, Shyuan; Hone, James; Kymissis, Ioannis

2015-04-08

Graphene is a promising flexible, highly transparent, and elementally abundant electrode for organic electronics. Typical methods utilized to transfer large-area films of graphene synthesized by chemical vapor deposition on metal catalysts are not compatible with organic thin-films, limiting the integration of graphene into organic optoelectronic devices. This article describes a graphene transfer process onto chemically sensitive organic semiconductor thin-films. The process incorporates an elastomeric stamp with a fluorinated polymer release layer that can be removed, post-transfer, via a fluorinated solvent; neither fluorinated material adversely affects the organic semiconductor materials. We used Raman spectroscopy, atomic force microscopy, and scanning electron microscopy to show that chemical vapor deposition graphene can be successfully transferred without inducing defects in the graphene film. To demonstrate our transfer method's compatibility with organic semiconductors, we fabricate three classes of organic thin-film devices: graphene field effect transistors without additional cleaning processes, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices. These experiments demonstrate the potential of hybrid graphene/organic devices in which graphene is deposited directly onto underlying organic thin-film structures.

Platform technologies for hybrid optoelectronic integration and packaging

NASA Astrophysics Data System (ADS)

Datta, Madhumita

In order to bring fiber-optics closer to individual home and business services, the optical network components have to be inexpensive and reliable. Integration and packaging of optoelectronic devices holds the key to high-volume low-cost component manufacturing. The goal of this dissertation is to propose, study, and demonstrate various ways to integrate optoelectronic devices on a packaging platform to implement cost-effective, functional optical modules. Two types of hybrid integration techniques have been proposed: flip-chip solder bump bonding for high-density two-dimensional array packaging of surface-emitting devices, and solder preform bonding for fiber-coupled edge-emitting semiconductor devices. For flip-chip solder bump bonding, we developed a simple, inexpensive remetallization process called "electroless plating", which converts the aluminum bond pads of foundry-made complementary metal oxide semiconductor (CMOS) chips into solder-bondable and wire-bondable gold surfaces. We have applied for a patent on this remetallization technique. For fiber-pigtailed edge-emitting laser modules, we have studied the coupling characteristics of different types of lensed single-mode fibers including semispherically lensed fiber, cylindrically lensed fiber and conically lensed fiber. We have experimentally demonstrated 66% coupling efficiency with semispherically lensed fiber and 50% efficiency with conically lensed fibers. We have proposed and designed a packaging platform on which lensed fibers can be actively aligned to a laser and solder-attached reliably to the platform so that the alignment is retained. We have designed thin-film nichrome heaters on fused quartz platforms as local heat source to facilitate on-board solder alignment and attachment of fiber. The thermal performance of the heaters was simulated using finite element analysis tool ANSYS prior to fabrication. Using the heater's reworkability advantage, we have estimated the shift of the fiber due to

Predictive factors of life quality among packaging workers in Taiwan.

PubMed

Yang, Shang-Yu; Hsu, Der-Jen; Yen, Chun-Ming; Chang, Jer-Hao

2018-05-16

The semiconductor plants on the top of high-tech industrial chain hire many packaging workers to carry out miscellaneous packing tasks for various product orders from different companies and countries. Under tremendous workload the quality of life (QoL) of such packaging workers need to be concerned. The aim of this study was to explore factors influencing their QoL. This study recruited 247 packing workers (162 male and 85 female; mean age: 35.6 years old) in 2015 and 2016 from a semiconductor plant in Taiwan by convenience sampling. The questionnaire comprised four parts: demographics, the World Health Organization Quality of Life (WHOQOL-BREF), an occupational burnout inventory and the Nordic Musculoskeletal Questionnaire. The four domains of the WHOQOL-BREF were defined as outcome variables. Predictive factors included gender (reference: male), age (reference: ≤ 35), BMI (reference: ≤ 25), educational level (reference: below university), marital/partner status (reference: married/cohabiting), years of work (reference: ≤ 5), work shift (reference: day shift), personal burnout, work-related burnout, over-commitment to work and the number of body parts with discomfort (0-9). The findings showed that physical QoL was negatively correlated with night -shift work, personal burnout, and number of body parts with discomfort. Psychological QoL was negatively correlated with night shift work and personal burnout. Environment QoL was negatively correlated with being male, night shift work and personal burnout. The results showed that the QoL among the packaging workers could be improved by reducing musculoskeletal discomfort, personal burnout and by improving work schedules.

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

2002-01-01

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

Advanced mask cleaning for 0.20-μm technology: an integrated user-supplier approach

NASA Astrophysics Data System (ADS)

Poschenrieder, Rudolf; Hay, Bernd; Beier, Matthias; Hourd, Andrew C.; Stuemer, Harald; Gairing, Thomas M.

1998-12-01

A newly developed photomask final cleaning system, STEAG HamaTech's Advanced Single Substrate Cleaner, ASC 500, was assessed and optimized at the Siemens mask shop in Munich, Germany, under production conditions within the Esprit European Semiconductor Equipment Assessment programme (SEA). The project was carried out together with the active participation of Compugraphics Intl. Ltd. (UK), DuPont Photomasks, Inc. (Germany; Photronics-MZD, Germany). The results of the assessment are presented, focusing on the cleaning performance at the 0.25 micrometer defect level on photomasks, equipment reliability and Cost of Ownership data. A reticle free of soft defects on glass and on chrome down to the 0.25 micrometer level requires an excellent cleaning process and the use of high-end inspection tools like the KLA STARlight. In order to get a full understanding of the nature of the detected features additional investigations on the blank quality have been carried out. These investigations include the questions whether a detection is a hard or a soft defect and whether small defects on chrome are able to move on the reticle surface. Final cleaning recipes have been optimized in respect to cleaning efficiency while maintaining high throughput and low Cost of Ownership. A benchmark comparison against other final cleaning tools at the partner's maskshops showed the leading data of the ASC 500. It was found that a cleaning program which includes several substrate flips and a combination of the available cleaning methods acid- dispense, water pressure jet clean, brush and megasonic clean was best suitable to achieve these goals. In particular the use of the brush unit was shown to improve the yield while not adding damage to the plate.

Photo-Curable Metal-Chelating Coatings Offer a Scalable Approach to Production of Antioxidant Active Packaging.

PubMed

Lin, Zhuangsheng; Goddard, Julie

2018-02-01

Synthetic metal chelators (for example, ethylenediaminetetraacetic acid, EDTA) are widely used as additives to control trace transition metal induced oxidation in consumer products. To enable removal of synthetic chelators in response to increasing consumer demand for clean label products, metal-chelating active food packaging technologies have been developed with demonstrated antioxidant efficacy in simulated food systems. However, prior work in fabrication of metal-chelating materials leveraged batch chemical reactions to tether metal-chelating ligands, a process with limited industrial translatability for large-scale fabrication. To improve the industrial translatability, we have designed a 2-step laminated photo-grafting process to introduce metal chelating functionality onto common polymeric packaging materials. Iminodiacetic acid (IDA) functionalized materials were fabricated by photo-grafting poly(acrylic acid) onto polypropylene (PP) films, followed by a second photo-grafting process to graft-polymerize an IDA functionalized vinyl monomer (GMA-IDA). The photo-grafting was conducted under atmospheric conditions and was completed in 2 min. The resulting IDA functionalized metal-chelating material was able to chelate iron and copper, and showed antioxidant efficacy against ascorbic acid degradation, supporting its potential to be used synergistically with natural antioxidants for preservation of food and beverage products. The 2-step photo-grafting process improves the throughput of active packaging coatings, enabling potential roll-to-roll fabrication of metal-chelating active packaging materials for antioxidant food packaging applications. To address consumer and retail demands for "clean label" foods and beverages without a corresponding loss in product quality and shelf life, producers are seeking next generation technologies such as active packaging. In this work, we will report the synthesis of metal-chelating active packaging films, which enable removal

Correlating Cleaning Thoroughness with Effectiveness and Briefly Intervening to Affect Cleaning Outcomes: How Clean Is Cleaned?

PubMed

Clifford, Robert; Sparks, Michael; Hosford, Eve; Ong, Ana; Richesson, Douglas; Fraser, Susan; Kwak, Yoon; Miller, Sonia; Julius, Michael; McGann, Patrick; Lesho, Emil

2016-01-01

The most efficient approach to monitoring and improving cleaning outcomes remains unresolved. We sought to extend the findings of a previous study by determining whether cleaning thoroughness (dye removal) correlates with cleaning efficacy (absence of molecular or cultivable biomaterial) and whether one brief educational intervention improves cleaning outcomes. Before-after trial. Newly built community hospital. 90 minute training refresher with surface-specific performance results. Dye removal, measured by fluorescence, and biomaterial removal and acquisition, measured with culture and culture-independent PCR-based assays, were clandestinely assessed for eight consecutive months. At this midpoint, results were presented to the cleaning staff (intervention) and assessments continued for another eight consecutive months. 1273 surfaces were sampled before and after terminal room cleaning. In the short-term, dye removal increased from 40.3% to 50.0% (not significant). For the entire study period, dye removal also improved but not significantly. After the intervention, the number of rooms testing positive for specific pathogenic species by culturing decreased from 55.6% to 36.6% (not significant), and those testing positive by PCR fell from 80.6% to 53.7% (P = 0.016). For nonspecific biomaterial on surfaces: a) removal of cultivable Gram-negatives (GN) trended toward improvement (P = 0.056); b) removal of any cultivable growth was unchanged but acquisition (detection of biomaterial on post-cleaned surfaces that were contaminant-free before cleaning) worsened (P = 0.017); c) removal of PCR-based detection of bacterial DNA improved (P = 0.046), but acquisition worsened (P = 0.003); d) cleaning thoroughness and efficacy were not correlated. At this facility, a minor intervention or minimally more aggressive cleaning may reduce pathogen-specific contamination, but not without unintended consequences.

Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method

PubMed Central

Rolin, Cedric; Kang, Enpu; Lee, Jeong-Hwan; Borghs, Gustaaf; Heremans, Paul; Genoe, Jan

2017-01-01

Thin film transistors based on high-mobility organic semiconductors are prone to contact problems that complicate the interpretation of their electrical characteristics and the extraction of important material parameters such as the charge carrier mobility. Here we report on the gated van der Pauw method for the simple and accurate determination of the electrical characteristics of thin semiconducting films, independently from contact effects. We test our method on thin films of seven high-mobility organic semiconductors of both polarities: device fabrication is fully compatible with common transistor process flows and device measurements deliver consistent and precise values for the charge carrier mobility and threshold voltage in the high-charge carrier density regime that is representative of transistor operation. The gated van der Pauw method is broadly applicable to thin films of semiconductors and enables a simple and clean parameter extraction independent from contact effects. PMID:28397852

Acceptance Data Package: SXI Stepper Motor/Encoder. Aeroflex P/N 16187. A; Engineering Drawings and Associated Lists

NASA Technical Reports Server (NTRS)

1994-01-01

Acceptance data package - engineering drawings and associated lists for fabrication, assembly and maintenance (cleaning, fluidized bed coating, bounding and staking) motor/encoded solar x-ray imager (SXI) (Aeroflex p/n 16187) were given.

Python Scripts for Automation of Current-Voltage Testing of Semiconductor Devices (FY17)

DTIC Science & Technology

2017-01-01

ARL-TR-7923 ● JAN 2017 US Army Research Laboratory Python Scripts for Automation of Current- Voltage Testing of Semiconductor...manual device-testing procedures is reduced or eliminated through automation. This technical report includes scripts written in Python , version 2.7, used ...nothing. 3.1.9 Exit Program The script exits the entire program. Line 505, sys.exit(), uses the sys package that comes with Python to exit system

Semiconductor photoelectrochemistry

NASA Technical Reports Server (NTRS)

Buoncristiani, A. M.; Byvik, C. E.

1983-01-01

Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

NASA Technical Reports Server (NTRS)

Mishina, H.; Buckley, D. H.

1984-01-01

Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

A survey of packages for large linear systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Kesheng; Milne, Brent

2000-02-11

This paper evaluates portable software packages for the iterative solution of very large sparse linear systems on parallel architectures. While we cannot hope to tell individual users which package will best suit their needs, we do hope that our systematic evaluation provides essential unbiased information about the packages and the evaluation process may serve as an example on how to evaluate these packages. The information contained here include feature comparisons, usability evaluations and performance characterizations. This review is primarily focused on self-contained packages that can be easily integrated into an existing program and are capable of computing solutions to verymore » large sparse linear systems of equations. More specifically, it concentrates on portable parallel linear system solution packages that provide iterative solution schemes and related preconditioning schemes because iterative methods are more frequently used than competing schemes such as direct methods. The eight packages evaluated are: Aztec, BlockSolve,ISIS++, LINSOL, P-SPARSLIB, PARASOL, PETSc, and PINEAPL. Among the eight portable parallel iterative linear system solvers reviewed, we recommend PETSc and Aztec for most application programmers because they have well designed user interface, extensive documentation and very responsive user support. Both PETSc and Aztec are written in the C language and are callable from Fortran. For those users interested in using Fortran 90, PARASOL is a good alternative. ISIS++is a good alternative for those who prefer the C++ language. Both PARASOL and ISIS++ are relatively new and are continuously evolving. Thus their user interface may change. In general, those packages written in Fortran 77 are more cumbersome to use because the user may need to directly deal with a number of arrays of varying sizes. Languages like C++ and Fortran 90 offer more convenient data encapsulation mechanisms which make it easier to implement a clean and intuitive

Correlating Cleaning Thoroughness with Effectiveness and Briefly Intervening to Affect Cleaning Outcomes: How Clean Is Cleaned?

PubMed Central

Hosford, Eve; Ong, Ana; Richesson, Douglas; Fraser, Susan; Kwak, Yoon; Miller, Sonia; Julius, Michael; McGann, Patrick; Lesho, Emil

2016-01-01

Objectives The most efficient approach to monitoring and improving cleaning outcomes remains unresolved. We sought to extend the findings of a previous study by determining whether cleaning thoroughness (dye removal) correlates with cleaning efficacy (absence of molecular or cultivable biomaterial) and whether one brief educational intervention improves cleaning outcomes. Design Before-after trial. Setting Newly built community hospital. Intervention 90 minute training refresher with surface-specific performance results. Methods Dye removal, measured by fluorescence, and biomaterial removal and acquisition, measured with culture and culture-independent PCR-based assays, were clandestinely assessed for eight consecutive months. At this midpoint, results were presented to the cleaning staff (intervention) and assessments continued for another eight consecutive months. Results 1273 surfaces were sampled before and after terminal room cleaning. In the short-term, dye removal increased from 40.3% to 50.0% (not significant). For the entire study period, dye removal also improved but not significantly. After the intervention, the number of rooms testing positive for specific pathogenic species by culturing decreased from 55.6% to 36.6% (not significant), and those testing positive by PCR fell from 80.6% to 53.7% (P = 0.016). For nonspecific biomaterial on surfaces: a) removal of cultivable Gram-negatives (GN) trended toward improvement (P = 0.056); b) removal of any cultivable growth was unchanged but acquisition (detection of biomaterial on post-cleaned surfaces that were contaminant-free before cleaning) worsened (P = 0.017); c) removal of PCR-based detection of bacterial DNA improved (P = 0.046), but acquisition worsened (P = 0.003); d) cleaning thoroughness and efficacy were not correlated. Conclusion At this facility, a minor intervention or minimally more aggressive cleaning may reduce pathogen-specific contamination, but not without unintended consequences. PMID

Ergonomic risk factors of work processes in the semiconductor industry in Peninsular Malaysia.

PubMed

Chee, Heng-Leng; Rampal, Krishna Gopal; Chandrasakaran, Abherhame

2004-07-01

A cross-sectional survey of semiconductor factories was conducted to identify the ergonomic risk factors in the work processes, the prevalence of body pain among workers, and the relationship between body pain and work processes. A total of 906 women semiconductor workers took part in the study. In wafer preparation and polishing, a combination of lifting weights and prolonged standing might have led to high pain prevalences in the low back (35.0% wafer preparation, 41.7% wafer polishing) and lower limbs (90.0% wafer preparation, 66.7% wafer polishing). Semiconductor front of line workers, who mostly walked around to operate machines in clean rooms, had the lowest prevalences of body pain. Semiconductor assembly middle of line workers, especially the molding workers, who did frequent lifting, had high pain prevalences in the neck/shoulders (54.8%) and upper back (43.5 %). In the semiconductor assembly end of line work section, chip inspection workers who were exposed to prolonged sitting without back support had high prevalences of neck/shoulder (62.2%) and upper back pain (50.0%), while chip testing workers who had to climb steps to load units had a high prevalence of lower limb pain (68.0%). Workers in the assembly of electronic components, carrying out repetitive tasks with hands and fingers, and standing in awkward postures had high pain prevalences in the neck/shoulders (61.5%), arms (38.5%), and hands/wrists (30.8%).

Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

NASA Astrophysics Data System (ADS)

Zhang, Liping; Jaroniec, Mietek

2018-02-01

Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

High-Temperature, Wirebondless, Ultracompact Wide Bandgap Power Semiconductor Modules

NASA Technical Reports Server (NTRS)

Elmes, John

2015-01-01

Silicon carbide (SiC) and other wide bandgap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultrahigh power density for both space and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliable high-temperature device packaging technology. This Phase II project developed an ultracompact hybrid power module packaging technology based on the use of double lead frames and direct lead frame-to-chip transient liquid phase (TLP) bonding that allows device operation up to 450 degC. The new power module will have a very small form factor with 3-5X reduction in size and weight from the prior art, and it will be capable of operating from 450 degC to -125 degC. This technology will have a profound impact on power electronics and energy conversion technologies and help to conserve energy and the environment as well as reduce the nation's dependence on fossil fuels.

Measures of International Manufacturing and Trade of Clean Energy Technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Engel-Cox, Jill; Sandor, Debbie; Keyser, David

The technologies that produce clean energy, such as solar photovoltaic panels and lithium ion batteries for electric vehicles, are globally manufactured and traded. As demand and deployment of these technologies grows exponentially, the innovation to reach significant economies of scale and drive down energy production costs becomes less in the technology and more in the manufacturing of the technology. Manufacturing innovations and other manufacturing decisions can reduce costs of labor, materials, equipment, operating costs, and transportation, across all the links in the supply chain. To better understand the manufacturing aspect of the clean energy economy, we have developed key metricsmore » for systematically measuring and benchmarking international manufacturing of clean energy technologies. The metrics are: trade, market size, manufacturing value-added, and manufacturing capacity and production. These metrics were applied to twelve global economies and four representative technologies: wind turbine components, crystalline silicon solar photovoltaic modules, vehicle lithium ion battery cells, and light emitting diode packages for efficient lighting and other consumer products. The results indicated that clean energy technologies are being developed via complex, dynamic, and global supply chains, with individual economies benefiting from different technologies and links in the supply chain, through both domestic manufacturing and global trade.« less

Materials for high-density electronic packaging and interconnection

NASA Technical Reports Server (NTRS)

1990-01-01

Electronic packaging and interconnections are the elements that today limit the ultimate performance of advanced electronic systems. Materials in use today and those becoming available are critically examined to ascertain what actions are needed for U.S. industry to compete favorably in the world market for advanced electronics. Materials and processes are discussed in terms of the final properties achievable and systems design compatibility. Weak points in the domestic industrial capability, including technical, industrial philosophy, and political, are identified. Recommendations are presented for actions that could help U.S. industry regain its former leadership position in advanced semiconductor systems production.

Semiconductor sensors

NASA Technical Reports Server (NTRS)

Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

1977-01-01

A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

Effectiveness of X-ray grating interferometry for non-destructive inspection of packaged devices

NASA Astrophysics Data System (ADS)

Uehara, Masato; Yashiro, Wataru; Momose, Atsushi

2013-10-01

It is difficult to inspect packaged devices such as IC packages and power modules because the devices contain various components, such as semiconductors, metals, ceramics, and resin. In this paper, we demonstrated the effectiveness of X-ray grating interferometry (XGI) using a laboratory X-ray tube for the industrial inspection of packaged devices. The obtained conventional absorption image showed heavy-elemental components such as metal wires and electrodes, but the image did not reveal the defects in the light-elemental components. On the other hand, the differential phase-contrast image obtained by XGI revealed microvoids and scars in the encapsulant of the samples. The visibility contrast image also obtained by XGI showed some cracks in the ceramic insulator of power module sample. In addition, the image showed the silicon plate surrounded by the encapsulant having the same X-ray absorption coefficient. While these defects and components are invisible in the conventional industrial X-ray imaging, XGI thus has an attractive potential for the industrial inspection of the packaged devices.

Adhesion and friction of iron and gold in contact with elemental semiconductors

NASA Technical Reports Server (NTRS)

Buckley, D. H.; Brainard, W. A.

1977-01-01

Adhesion and friction experiments were conducted with single crystals of iron and gold in contact with single crystals of germanium and silicon. Surfaces were examined in the sputter cleaned state and in the presence of oxygen and a lubricant. All experiments were conducted at room temperature with loads of 1 to 50 grams, and sliding friction was at a sliding velocity of 0.7 mm/min. Results indicate that the friction nature of metals in contact with semiconductors is sensitive to orientation, that strong adhesion of metals to both germanium and silicon occurs, and that friction is lower with silicon than with germanium for the same orientation. Surface effects are highly sensitive to environment. Silicon, for example, behaves in an entirely brittle manner in the clean state, but in the presence of a lubricant the surface deforms plastically.

Wafer-Level Vacuum Packaging of Smart Sensors.

PubMed

Hilton, Allan; Temple, Dorota S

2016-10-31

The reach and impact of the Internet of Things will depend on the availability of low-cost, smart sensors-"low cost" for ubiquitous presence, and "smart" for connectivity and autonomy. By using wafer-level processes not only for the smart sensor fabrication and integration, but also for packaging, we can further greatly reduce the cost of sensor components and systems as well as further decrease their size and weight. This paper reviews the state-of-the-art in the wafer-level vacuum packaging technology of smart sensors. We describe the processes needed to create the wafer-scale vacuum microchambers, focusing on approaches that involve metal seals and that are compatible with the thermal budget of complementary metal-oxide semiconductor (CMOS) integrated circuits. We review choices of seal materials and structures that are available to a device designer, and present techniques used for the fabrication of metal seals on device and window wafers. We also analyze the deposition and activation of thin film getters needed to maintain vacuum in the ultra-small chambers, and the wafer-to-wafer bonding processes that form the hermetic seal. We discuss inherent trade-offs and challenges of each seal material set and the corresponding bonding processes. Finally, we identify areas for further research that could help broaden implementations of the wafer-level vacuum packaging technology.

Wafer-Level Vacuum Packaging of Smart Sensors

PubMed Central

Hilton, Allan; Temple, Dorota S.

2016-01-01

The reach and impact of the Internet of Things will depend on the availability of low-cost, smart sensors—“low cost” for ubiquitous presence, and “smart” for connectivity and autonomy. By using wafer-level processes not only for the smart sensor fabrication and integration, but also for packaging, we can further greatly reduce the cost of sensor components and systems as well as further decrease their size and weight. This paper reviews the state-of-the-art in the wafer-level vacuum packaging technology of smart sensors. We describe the processes needed to create the wafer-scale vacuum microchambers, focusing on approaches that involve metal seals and that are compatible with the thermal budget of complementary metal-oxide semiconductor (CMOS) integrated circuits. We review choices of seal materials and structures that are available to a device designer, and present techniques used for the fabrication of metal seals on device and window wafers. We also analyze the deposition and activation of thin film getters needed to maintain vacuum in the ultra-small chambers, and the wafer-to-wafer bonding processes that form the hermetic seal. We discuss inherent trade-offs and challenges of each seal material set and the corresponding bonding processes. Finally, we identify areas for further research that could help broaden implementations of the wafer-level vacuum packaging technology. PMID:27809249

Controlling Wafer Contamination Using Automated On-Line Metrology during Wet Chemical Cleaning

NASA Astrophysics Data System (ADS)

Wang, Jason; Kingston, Skip; Han, Ye; Saini, Harmesh; McDonald, Robert; Mui, Rudy

2003-09-01

The capabilities of a trace contamination analyzer are discussed and demonstrated. This analytical tool utilizes an electrospray, time-of-flight mass spectrometer (ES-TOF-MS) for fully automated on-line monitoring of wafer cleaning solutions. The analyzer provides rich information on metallic, anionic, cationic, elemental, and organic species through its ability to provide harsh (elemental) and soft (molecular) ionization under both positive and negative modes. It is designed to meet semiconductor process control and yield management needs for the ever increasing complex new chemistries present in wafer fabrication.

Insulated InP (100) semiconductor by nano nucleus generation in pure water

NASA Astrophysics Data System (ADS)

Ghorab, Farzaneh; Es'haghi, Zarrin

2018-01-01

Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

Evaluation of exposures to fluorocarbon 113 in a horizontal and a vertical laminar airflow clean room.

PubMed

Bloom, T F; Egeland, G M

1999-01-01

Exposures to 1,1,2-trichloro-1,2,2-trifluoroethane or fluorocarbon (FC) 113 were evaluated in a horizontal laminar airflow (HLAF) clean room and a vertical laminar airflow (VLAF) clean room. A full period consecutive samples measurement strategy was employed. Data were used to calculate 8-hour time-weighted averages (8-TWA) for major work groups and to characterize exposures associated with specific cleaning tasks. The MIRAN 1B infrared analyzer was used to estimate peak concentrations. In the HLAF clean room, 8-TWAs ranged from 193 to 439 ppm; in the VLAF clean room, 8-TWAs ranged from 110 to 935 ppm. These levels were below the current Occupational Safety and Health Administration permissible exposure limit and the National Institute for Occupational Safety and Health (NIOSH) recommended exposure limit for FC 113 of 1000 ppm. Short-term sample concentrations ranged from 104 ppm (inspection) to 1080 ppm (assembly) in the HLAF clean room and 51 ppm (packaging)-3380 ppm (flushing) in the VLAF clean room. In the VLAF clean room, several short-term concentrations measured during the flushing task--1421 ppm and 2522 ppm--were above the NIOSH short-term exposure limit (STEL) of 1250 ppm. These data suggest the possibility that the STEL may be exceeded for tasks involving direct work with liquid FC 113. Peak exposure levels may be reduced by modification of worker position in the HLAF clean room and by use of open wire tables in the VLAF clean room.

Obesity and high blood pressure of 12-hour night shift female clean-room workers.

PubMed

Chen, Jong-Dar; Lin, Yu-Cheng; Hsiao, Shu-Tin

2010-01-01

The 12 h shift schedule is widely used in clean rooms for electronic semiconductor production in Taiwan. This study investigated the associations of obesity and metabolic syndrome (MetS) components among women working in a semiconductor manufacturing factory in North Taiwan. Workers were divided into four groups according to their work schedules and duties (i.e., office workers, day workers, fixed 12 h day shift, and fixed 12 h night shiftworkers). The subjects comprised 1838 women who voluntarily attended a health examination between August 2006 and November 2006. Their mean (+/-SD) age was 33.6 (+/-7.1) yrs and their mean duration of work was 7.4 (+/-5.2) yrs. Each subject's health-related behaviors, body mass index, and MetS components were measured and analyzed using multivariate logistic regression. Obesity and MetS were defined according to World Health Organization criteria for Asian populations and the National Cholesterol Educational Program and Adult Treatment Panel III Guidelines, respectively. The results showed that women working in the clean room on fixed 12 h night shifts had significantly elevated odds ratios for obesity (OR, 2.7; 95% CI, 1.6-4.5), central obesity (OR, 2.9; 95% CI, 1.7-5.1), and high blood pressure (OR, 2.3; 95% CI, 1.2-4.4) compared to female office workers; these results persisted after adjusting for age, smoking, drinking, education, and duration of work. We did not find any significant differences in triglyceride and high-density lipoprotein cholesterol among women working different schedules. We conclude that working fixed 12 h night shifts was associated with an increased odds ratio for obesity, central obesity, and high blood pressure among clean-room women workers. Weight reduction and blood pressure control programs should be implemented in the workplace for women working fixed 12 h night shifts.

The Research and Implementation of MUSER CLEAN Algorithm Based on OpenCL

NASA Astrophysics Data System (ADS)

Feng, Y.; Chen, K.; Deng, H.; Wang, F.; Mei, Y.; Wei, S. L.; Dai, W.; Yang, Q. P.; Liu, Y. B.; Wu, J. P.

2017-03-01

It's urgent to carry out high-performance data processing with a single machine in the development of astronomical software. However, due to the different configuration of the machine, traditional programming techniques such as multi-threading, and CUDA (Compute Unified Device Architecture)+GPU (Graphic Processing Unit) have obvious limitations in portability and seamlessness between different operation systems. The OpenCL (Open Computing Language) used in the development of MUSER (MingantU SpEctral Radioheliograph) data processing system is introduced. And the Högbom CLEAN algorithm is re-implemented into parallel CLEAN algorithm by the Python language and PyOpenCL extended package. The experimental results show that the CLEAN algorithm based on OpenCL has approximately equally operating efficiency compared with the former CLEAN algorithm based on CUDA. More important, the data processing in merely CPU (Central Processing Unit) environment of this system can also achieve high performance, which has solved the problem of environmental dependence of CUDA+GPU. Overall, the research improves the adaptability of the system with emphasis on performance of MUSER image clean computing. In the meanwhile, the realization of OpenCL in MUSER proves its availability in scientific data processing. In view of the high-performance computing features of OpenCL in heterogeneous environment, it will probably become the preferred technology in the future high-performance astronomical software development.

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2010-08-13

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Clean Assembly of Genesis Collector Canister for Flight: Lessons for Planetary Sample Return

NASA Technical Reports Server (NTRS)

Allton, J. H.; Stansbery, E. K.; Allen, C. C.; Warren, J. L.; Schwartz, C. M.

2007-01-01

Measurement of solar composition in the Genesis collectors requires not only high sensitivity but very low blanks; thus, very strict collector contamination minimization was required beginning with mission planning and continuing through hardware design, fabrication, assembly and testing. Genesis started with clean collectors and kept them clean inside of a canister. The mounting hardware and container for the clean collectors were designed to be cleanable, with access to all surfaces for cleaning. Major structural components were made of aluminum and cleaned with megasonically energized ultrapure water (UPW). The UPW purity was >18 M resistivity. Although aluminum is relatively difficult to clean, the Genesis protocol achieved level 25 and level 50 cleanliness on large structural parts; however, the experience suggests that surface treatments may be helpful on future missions. All cleaning was performed in an ISO Class 4 (Class 10) cleanroom immediately adjacent to an ISO Class 4 assembly room; thus, no plastic packaging was required for transport. Persons assembling the canister were totally enclosed in cleanroom suits with face shield and HEPA filter exhaust from suit. Interior canister materials, including fasteners, were installed, untouched by gloves, using tweezers and other stainless steel tools. Sealants/lubricants were not exposed inside the canister, but vented to the exterior and applied in extremely small amounts using special tools. The canister was closed in ISO Class 4, not to be opened until on station at Earth-Sun L1. Throughout the cleaning and assembly, coupons of reference materials that were cleaned at the same time as the flight hardware were archived for future reference and blanks. Likewise reference collectors were archived. Post-mission analysis of collectors has made use of these archived reference materials.

Macroporous Semiconductors

PubMed Central

Föll, Helmut; Leisner, Malte; Cojocaru, Ala; Carstensen, Jürgen

2010-01-01

Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

FOREWORD: Focus on Superconductivity in Semiconductors Focus on Superconductivity in Semiconductors

NASA Astrophysics Data System (ADS)

Takano, Yoshihiko

2008-12-01

Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm-3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors. This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008), which was held at the National Institute for Materials Science (NIMS), Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM) in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1). The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al) and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al) are discussed, and In2O3 (Makise et al) is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

Packaging Technology Developed for High-Temperature Silicon Carbide Microsystems

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.

2001-01-01

High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as sensors and electronics for space missions to the inner solar system, sensors for in situ combustion and emission monitoring, and electronics for combustion control for aeronautical and automotive engines. However, these devices cannot be used until they can be packaged in appropriate forms for specific applications. Suitable packaging technology for operation temperatures up to 500 C and beyond is not commercially available. Thus, the development of a systematic high-temperature packaging technology for SiC-based microsystems is essential for both in situ testing and commercializing high-temperature SiC sensors and electronics. In response to these needs, researchers at Glenn innovatively designed, fabricated, and assembled a new prototype electronic package for high-temperature electronic microsystems using ceramic substrates (aluminum nitride and aluminum oxide) and gold (Au) thick-film metallization. Packaging components include a ceramic packaging frame, thick-film metallization-based interconnection system, and a low electrical resistance SiC die-attachment scheme. Both the materials and fabrication process of the basic packaging components have been tested with an in-house-fabricated SiC semiconductor test chip in an oxidizing environment at temperatures from room temperature to 500 C for more than 1000 hr. These test results set lifetime records for both high-temperature electronic packaging and high-temperature electronic device testing. As required, the thick-film-based interconnection system demonstrated low (2.5 times of the room-temperature resistance of the Au conductor) and stable (decreased 3 percent in 1500 hr of continuous testing) electrical resistance at 500 C in an oxidizing environment. Also as required, the electrical isolation impedance between printed wires that were not electrically joined by a wire bond remained high

Unitary lens semiconductor device

DOEpatents

Lear, Kevin L.

1997-01-01

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Prevalence of pesticides in postconsumer agrochemical polymeric packaging.

PubMed

Eras, J; Costa, J; Vilaró, F; Pelacho, A M; Canela-Garayoa, R; Martin-Closas, L

2017-02-15

Pesticide remains contained in agrochemical packaging waste are a source of uncontrolled risk for human health; they are also a quality feedstock for the plastic recycling industry. Many governments have recently started to establish laws and regulations to develop systems for recovering and recycling the polymeric packages used for pesticides. There is also a demand in having a procedure to control the suitability of the pesticide packages to be reused. We have developed a two-step operation process to assess the pesticide residues in agricultural containers made of a variety of polymeric matrices. The procedure is based on an extraction with a solvent mixture followed by UPLC-MS/MS determination. Solvents for neutral pesticides were selected considering the Hildebrand solubility (δ) of solvents and polymers together with those estimated for the pesticides. The proposed technique is effective in recovering imbibed pesticides in polymeric matrices. Also, a simplified extraction procedure has been tested to become a routine method for these wastes. We have found that in many cases a significant amount of pesticides remain into the polymeric matrix, even after a standardized cleaning; the impact of releasing these hazardous compounds into the environment is to be of further consideration. Copyright © 2016 Elsevier B.V. All rights reserved.

Unitary lens semiconductor device

DOEpatents

Lear, K.L.

1997-05-27

A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

[Effect of manual cleaning and machine cleaning for dental handpiece].

PubMed

Zhou, Xiaoli; Huang, Hao; He, Xiaoyan; Chen, Hui; Zhou, Xiaoying

2013-08-01

Comparing the dental handpiece' s cleaning effect between manual cleaning and machine cleaning. Eighty same contaminated dental handpieces were randomly divided into experimental group and control group, each group contains 40 pieces. The experimental group was treated by full automatic washing machine, and the control group was cleaned manually. The cleaning method was conducted according to the operations process standard, then ATP bioluminescence was used to test the cleaning results. Average relative light units (RLU) by ATP bioluminescence detection were as follows: Experimental group was 9, control group was 41. The two groups were less than the recommended RLU value provided by the instrument manufacturer (RLU < or = 45). There was significant difference between the two groups (P < 0.05). The cleaning quality of the experimental group was better than that of control group. It is recommended that the central sterile supply department should clean dental handpieces by machine to ensure the cleaning effect and maintain the quality.

Prevalence of Campylobacter, Salmonella, and Escherichia coli on the external packaging of raw meat.

PubMed

Burgess, F; Little, C L; Allen, G; Williamson, K; Mitchelli, R T

2005-03-01

During September and October 2002, 3,662 prepackaged raw meat samples were collected to evaluate the extent and nature of microbiological contamination on external surfaces of the packaging, which could potentially cross-contaminate ready-to-eat foods during and after purchase. Salmonella was detected on two (<1%) samples of external packaging (both from raw chicken), and Campylobacter was detected on 41 (1.1%) samples of external packaging. The external packaging of game fowl exhibited the highest Campylobacter contamination (3.6%), followed by raw chicken (3.0%), lamb (1.6%), turkey (0.8%), pork (0.2%), and beef (0.1%); Campylobacter jejuni and Campylobacter coli accounted for 59% (24 of 41) and 24% (10 of 41) of the contaminating Campylobacter species, respectively. C. coli isolates from the external packaging were more multiresistant to antimicrobial drugs, including quinolones such as ciprofloxacin, than was C. jejuni. Escherichia coli (an indicator of fecal contamination) was isolated from the external packaging on 4% of the raw meat samples at levels of 40 to 10(5) CFU per swab. The external packaging of raw meats is a vehicle for potential cross-contamination by Campylobacter, Salmonella, and E. coli in retail premises and consumers' homes. The external surface of heat-sealed packaging was less frequently contaminated with Campylobacter and E. coli compared with other types of packaging (e.g., overwrapping, bag, and tie tape) (P < 0.0001 to 0.01). In addition, external packaging of raw meats was contaminated less frequently with Campylobacter and E. coli when packaging was intact, packaging and display areas were visually clean, display temperatures were below 8 degrees C, and hazard analysis systems were in place.

[Characteristics, stability and in vitro efficacy of cleaning products for contact lenses].

PubMed

Coiffard, L; Rivalland, P; De Roeck-Holtzhauer, Y

1995-01-01

We characterized some market products designed for cleaning contact lenses and we compared their properties to the main requirements of eye-washes. We performed several physicochemical controls including pH determination, viscosity with a Baume apparatus and the decreasing of the freezing point following the method described by the French Pharmacopea. In addition, we carried out certain analytical controls, concerning three active principles (thiomersal, chlorhexidin digluconate, hydrogen peroxide), at the opening of the different package and after accelerated aging. A microbiological control was performed when opening the product and after a simulation of a 5-day aging. We finally determined the efficacy of the products on four bacterial strains for tests and of deproteinizing products on artificial dust. The pH values obtained ranged from 4.0 (oxygenated water solutions) to 7.8. The viscosity was close to a water solution one. Contents in active substances were usually similar to those stated on the package. At opening, the bacteriological quality was excellent. But, the multidose package were highly contaminated when used. Finally decontaminating efficacy against some germs was very good for the products tested. The results obtained show that the rincing products best answer the eye-wash criteria taken as references. Their main disadvantage is their contamination in the case of multidose packaging.

Airing 'clean air' in Clean India Mission.

PubMed

Banerjee, T; Kumar, M; Mall, R K; Singh, R S

2017-03-01

The submission explores the possibility of a policy revision for considering clean air quality in recently launched nationwide campaign, Clean India Mission (CIM). Despite of several efforts for improving availability of clean household energy and sanitation facilities, situation remain still depressing as almost half of global population lacks access to clean energy and proper sanitation. Globally, at least 2.5 billion people do not have access to basic sanitation facilities. There are also evidences of 7 million premature deaths by air pollution in year 2012. The situation is even more disastrous for India especially in rural areas. Although, India has reasonably progressed in developing sanitary facilities and disseminating clean fuel to its urban households, the situation in rural areas is still miserable and needs to be reviewed. Several policy interventions and campaigns were made to improve the scenario but outcomes were remarkably poor. Indian census revealed a mere 31% sanitation coverage (in 2011) compared to 22% in 2001 while 60% of population (700 million) still use solid biofuels and traditional cook stoves for household cooking. Further, last decade (2001-2011) witnessed the progress decelerating down with rural households without sanitation facilities increased by 8.3 million while minimum progress has been made in conversion of conventional to modern fuels. To revamp the sanitation coverage, an overambitious nationwide campaign CIM was initiated in 2014 and present submission explores the possibility of including 'clean air' considerations within it. The article draws evidence from literatures on scenarios of rural sanitation, energy practises, pollution induced mortality and climatic impacts of air pollution. This subsequently hypothesised with possible modification in available technologies, dissemination modes, financing and implementation for integration of CIM with 'clean air' so that access to both sanitation and clean household energy may be

Plasma Cleaning

NASA Technical Reports Server (NTRS)

Hintze, Paul E.

2016-01-01

NASA's Kennedy Space Center has developed two solvent-free precision cleaning techniques: plasma cleaning and supercritical carbon dioxide (SCCO2), that has equal performance, cost parity, and no environmental liability, as compared to existing solvent cleaning methods.

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

2014-06-01

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

Clean Energy Solutions Center: Assisting Countries with Clean Energy Policy

Science.gov Websites

Energy Solutions Center: Assisting Countries with Clean Energy Policy NREL helps developing countries and adapting to climate change impacts, developing countries are looking for clean energy solutions supports clean energy scale-up in the developing world are knowledge, capacity, and cost. The Clean Energy

Retaining Oxidative Stability of Emulsified Foods by Novel Nonmigratory Polyphenol Coated Active Packaging.

PubMed

Roman, Maxine J; Decker, Eric A; Goddard, Julie M

2016-07-13

Oxidation causes lipid rancidity, discoloration, and nutrient degradation that decrease shelf life of packaged foods. Synthetic additives are effective oxidation inhibitors, but are undesirable to consumers who prefer "clean" label products. The aim of this study was to improve oxidative stability of emulsified foods by a novel nonmigratory polyphenol coated active packaging. Polyphenol coatings were applied to chitosan functionalized polypropylene (PP) by laccase assisted polymerization of catechol and catechin. Polyphenol coated PP exhibited both metal chelating (39.3 ± 2.5 nmol Fe(3+) cm(-2), pH 4.0) and radical scavenging (up to 52.9 ± 1.8 nmol Trolox eq cm(-2)) capacity, resulting in dual antioxidant functionality to inhibit lipid oxidation and lycopene degradation in emulsions. Nonmigratory polyphenol coated PP inhibited ferric iron promoted degradation better than soluble chelators, potentially by partitioning iron from the emulsion droplet interface. This work demonstrates that polyphenol coatings can be designed for advanced material chemistry solutions in active food packaging.

GeAs and SiAs monolayers: Novel 2D semiconductors with suitable band structures

NASA Astrophysics Data System (ADS)

Zhou, Liqin; Guo, Yu; Zhao, Jijun

2018-01-01

Two dimensional (2D) materials provide a versatile platform for nanoelectronics, optoelectronics and clean energy conversion. Based on first-principles calculations, we propose a novel kind of 2D materials - GeAs and SiAs monolayers and investigate their atomic structure, thermodynamic stability, and electronic properties. The calculations show that monolayer GeAs and SiAs sheets are energetically and dynamically stable. Their small interlayer cohesion energies (0.191 eV/atom for GeAs and 0.178 eV/atom for SiAs) suggest easy exfoliation from the bulk solids that exist in nature. As 2D semiconductors, GeAs and SiAs monolayers possess band gap of 2.06 eV and 2.50 eV from HSE06 calculations, respectively, while their band gap can be further engineered by the number of layers. The relatively small and anisotropic carrier effective masses imply fast electric transport in these 2D semiconductors. In particular, monolayer SiAs is a direct gap semiconductor and a potential photocatalyst for water splitting. These theoretical results shine light on utilization of monolayer or few-layer GeAs and SiAs materials for the next-generation 2D electronics and optoelectronics with high performance and satisfactory stability.

Organic semiconductor crystals.

PubMed

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Gas-Liquid Supersonic Cleaning and Cleaning Verification Spray System

NASA Technical Reports Server (NTRS)

Parrish, Lewis M.

2009-01-01

NASA Kennedy Space Center (KSC) recently entered into a nonexclusive license agreement with Applied Cryogenic Solutions (ACS), Inc. (Galveston, TX) to commercialize its Gas-Liquid Supersonic Cleaning and Cleaning Verification Spray System technology. This technology, developed by KSC, is a critical component of processes being developed and commercialized by ACS to replace current mechanical and chemical cleaning and descaling methods used by numerous industries. Pilot trials on heat exchanger tubing components have shown that the ACS technology provides for: Superior cleaning in a much shorter period of time. Lower energy and labor requirements for cleaning and de-scaling uper.ninih. Significant reductions in waste volumes by not using water, acidic or basic solutions, organic solvents, or nonvolatile solid abrasives as components in the cleaning process. Improved energy efficiency in post-cleaning heat exchanger operations. The ACS process consists of a spray head containing supersonic converging/diverging nozzles, a source of liquid gas; a novel, proprietary pumping system that permits pumping liquid nitrogen, liquid air, or supercritical carbon dioxide to pressures in the range of 20,000 to 60,000 psi; and various hoses, fittings, valves, and gauges. The size and number of nozzles can be varied so the system can be built in configurations ranging from small hand-held spray heads to large multinozzle cleaners. The system also can be used to verify if a part has been adequately cleaned.

Method of doping a semiconductor

DOEpatents

Yang, Chiang Y.; Rapp, Robert A.

1983-01-01

A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

Can Beach Cleans Do More Than Clean-Up Litter? Comparing Beach Cleans to Other Coastal Activities

PubMed Central

Wyles, Kayleigh J.; Pahl, Sabine; Holland, Matthew; Thompson, Richard C.

2016-01-01

Coastal visits not only provide psychological benefits but can also contribute to the accumulation of rubbish. Volunteer beach cleans help address this issue, but may only have limited, local impact. Consequently, it is important to study any broader benefits associated with beach cleans. This article examines the well-being and educational value of beach cleans, as well as their impacts on individuals’ behavioral intentions. We conducted an experimental study that allocated students (n = 90) to a beach cleaning, rock pooling, or walking activity. All three coastal activities were associated with positive mood and pro-environmental intentions. Beach cleaning and rock pooling were associated with higher marine awareness. The unique impacts of beach cleaning were that they were rated as most meaningful but linked to lower restorativeness ratings of the environment compared with the other activities. This research highlights the interplay between environment and activities, raising questions for future research on the complexities of person-environment interactions. PMID:28546642

Polyfluoroalkyl phosphate esters and perfluoroalkyl carboxylic acids in target food samples and packaging--method development and screening.

PubMed

Gebbink, Wouter A; Ullah, Shahid; Sandblom, Oskar; Berger, Urs

2013-11-01

Polyfluoroalkyl phosphate mono-, di-, and tri-esters (mono-, di-, and triPAPs) are used to water- and grease-proof food packaging materials, and these chemicals are known precursors to perfluoroalkyl carboxylic acids (PFCAs). Existing analytical methods for PAPs lack sample clean-up steps in the sample preparation. In the present study, a method based on ultra performance liquid chromatography coupled to tandem mass spectrometry (UPLC/MS/MS) was developed and optimized for the analysis of mono-, di-, and triPAPs, including a clean-up step for the raw extracts. The method was applied to food samples and their PAP-containing packaging materials. The optimized UPLC/MS/MS method enabled the separation and identification of a total of 4 monoPAPs, 16 diPAPs, and 7 triPAPs in the technical mixture Zonyl®-RP. For sample clean-up, weak anion exchange solid phase extraction columns were tested. PAPs standard solutions spiked onto the columns were separated into a fraction containing neutral compounds (triPAPs) and a fraction with ionic compounds (mono- and diPAPs) with recoveries between 72-110%. Method limits of quantification for food samples were in the sub to low picogram per gram range. For quantitative analysis of PAPs, compound-specific labeled internal standards showed to be essential as sorption and matrix effects were observed. Mono-, di-, and/or triPAPs were detected in all food packaging materials obtained from the Swedish market. Up to nine diPAPs were detected in the food samples, with the 6:2/6:2 and 6:2/8:2 diPAPs as the dominant compounds. DiPAP concentrations in the food samples ranged from 0.9 to 36 pg/g, which was comparable to individual PFCA concentrations in the same samples. Consumption of food packed in PAP-containing materials could be an indirect source of human exposure to PFCAs.

Integrated three-dimensional module heat exchanger for power electronics cooling

DOEpatents

Bennion, Kevin; Lustbader, Jason

2013-09-24

Embodiments discussed herein are directed to a power semiconductor packaging that removes heat from a semiconductor package through one or more cooling zones that are located in a laterally oriented position with respect to the semiconductor package. Additional embodiments are directed to circuit elements that are constructed from one or more modular power semiconductor packages.

Variable temperature semiconductor film deposition

DOEpatents

Li, X.; Sheldon, P.

1998-01-27

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Variable temperature semiconductor film deposition

DOEpatents

Li, Xiaonan; Sheldon, Peter

1998-01-01

A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Management of MSW in Spain and recovery of packaging steel scrap.

PubMed

Tayibi, Hanan; Peña, Carmen; López, Félix A; López-Delgado, Aurora

2007-01-01

Packaging steel is more advantageously recovered and recycled than other packaging material due to its magnetic properties. The steel used for packaging is of high quality, and post-consumer waste therefore produces high-grade ferrous scrap. Recycling is thus an important issue for reducing raw material consumption, including iron ore, coal and energy. Household refuse management consists of collection/disposal, transport, and processing and treatment - incineration and composting being the most widely used methods in Spain. Total Spanish MSW production exceeds 21 million tons per year, of which 28.1% and 6.2% are treated in compost and incineration plants, respectively. This paper presents a comprehensive study of incineration and compost plants in Spain, including a review of the different processes and technologies employed and the characteristics and quality of the recovered ferrous scrap. Of the total amount of packaging steel scrap recovered from MSW, 38% comes from compost plants and 14% from incineration plants. Ferrous scrap from incineration plants presents a high degree of chemical alteration as a consequence of the thermal process to which the MSW is subjected, particularly the conditions in which the slag is cooled, and accordingly its quality diminishes. Fragmentation and magnetic separation processes produce an enhancement of the scrap quality. Ferrous scrap from compost plants has a high tin content, which negatively affects its recycling. Cleaning and detinning processes are required prior to recycling.

Back-side readout semiconductor photomultiplier

DOEpatents

Choong, Woon-Seng; Holland, Stephen E

2014-05-20

This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

Advances in photonics thermal management and packaging materials

NASA Astrophysics Data System (ADS)

Zweben, Carl

2008-02-01

Heat dissipation, thermal stresses, and cost are key packaging design issues for virtually all semiconductors, including photonic applications such as diode lasers, light-emitting diodes (LEDs), solid state lighting, photovoltaics, displays, projectors, detectors, sensors and laser weapons. Heat dissipation and thermal stresses affect performance and reliability. Copper, aluminum and conventional polymeric printed circuit boards (PCBs) have high coefficients of thermal expansion, which can cause high thermal stresses. Most traditional low-coefficient-of-thermal-expansion (CTE) materials like tungsten/copper, which date from the mid 20 th century, have thermal conductivities that are no better than those of aluminum alloys, about 200 W/m-K. There are an increasing number of low-CTE materials with thermal conductivities ranging between that of copper (400 W/m-K) and 1700 W/m-K, and many other new low-CTE materials with lower thermal conductivities. An important benefit of low-CTE materials is that they allow use of hard solders. Some advanced materials are low cost. Others have the potential to be low cost in high-volume production. High-thermal-conductivity materials enable higher power levels, potentially reducing the number of required devices. Advanced thermal materials can constrain PCB CTE and greatly increase thermal conductivity. This paper reviews traditional packaging materials and advanced thermal management materials. The latter provide the packaging engineer with a greater range of options than in the past. Topics include properties, status, applications, cost, using advanced materials to fix manufacturing problems, and future directions, including composites reinforced with carbon nanotubes and other thermally conductive materials.

Reference metrology in a research fab: the NIST clean calibrations thrust

NASA Astrophysics Data System (ADS)

Dixson, Ronald; Fu, Joe; Orji, Ndubuisi; Renegar, Thomas; Zheng, Alan; Vorburger, Theodore; Hilton, Al; Cangemi, Marc; Chen, Lei; Hernandez, Mike; Hajdaj, Russell; Bishop, Michael; Cordes, Aaron

2009-03-01

In 2004, the National Institute of Standards and Technology (NIST) commissioned the Advanced Measurement Laboratory (AML) - a state-of-the-art, five-wing laboratory complex for leading edge NIST research. The NIST NanoFab - a 1765 m2 (19,000 ft2) clean room with 743 m2 (8000 ft2) of class 100 space - is the anchor of this facility and an integral component of the new Center for Nanoscale Science and Technology (CNST) at NIST. Although the CNST/NanoFab is a nanotechnology research facility with a different strategic focus than a current high volume semiconductor fab, metrology tools still play an important role in the nanofabrication research conducted here. Some of the metrology tools available to users of the NanoFab include stylus profiling, scanning electron microscopy (SEM), and atomic force microscopy (AFM). Since 2001, NIST has collaborated with SEMATECH to implement a reference measurement system (RMS) using critical dimension atomic force microscopy (CD-AFM). NIST brought metrology expertise to the table and SEMATECH provided access to leading edge metrology tools in their clean room facility in Austin. Now, in the newly launched "clean calibrations" thrust at NIST, we are implementing the reference metrology paradigm on several tools in the CNST/NanoFab. Initially, we have focused on calibration, monitoring, and uncertainty analysis for a three-tool set consisting of a stylus profiler, an SEM, and an AFM. Our larger goal is the development of new and supplemental calibrations and standards that will benefit from the Class 100 environment available in the NanoFab and offering our customers calibration options that do not require exposing their samples to less clean environments. Toward this end, we have completed a preliminary evaluation of the performance of these instruments. The results of these evaluations suggest that the achievable uncertainties are generally consistent with our measurement goals.

Aqueous cleaning and verification processes for precision cleaning of small parts

NASA Technical Reports Server (NTRS)

Allen, Gale J.; Fishell, Kenneth A.

1995-01-01

The NASA Kennedy Space Center (KSC) Materials Science Laboratory (MSL) has developed a totally aqueous process for precision cleaning and verification of small components. In 1990 the Precision Cleaning Facility at KSC used approximately 228,000 kg (500,000 lbs) of chlorofluorocarbon (CFC) 113 in the cleaning operations. It is estimated that current CFC 113 usage has been reduced by 75 percent and it is projected that a 90 percent reduction will be achieved by the end of calendar year 1994. The cleaning process developed utilizes aqueous degreasers, aqueous surfactants, and ultrasonics in the cleaning operation and an aqueous surfactant, ultrasonics, and Total Organic Carbon Analyzer (TOCA) in the nonvolatile residue (NVR) and particulate analysis for verification of cleanliness. The cleaning and verification process is presented in its entirety, with comparison to the CFC 113 cleaning and verification process, including economic and labor costs/savings.

Semiconductor bridge (SCB) detonator

DOEpatents

Bickes, Jr., Robert W.; Grubelich, Mark C.

1999-01-01

The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

Semiconductor bridge (SCB) detonator

DOEpatents

Bickes, R.W. Jr.; Grubelich, M.C.

1999-01-19

The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

Wafer-fused semiconductor radiation detector

DOEpatents

Lee, Edwin Y.; James, Ralph B.

2002-01-01

Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

Capital investment in semiconductors: The lifeblood of the US semiconductor industry

NASA Astrophysics Data System (ADS)

Finan, William F.

1990-09-01

An analysis is given of four proposals designed to improve capital formation for U.S. industry in general, and the semiconductor industry in particular. The National Advisory Committee on Semiconductors recommendations were to make the current research and experimentation (R and E) tax credit more effective, to reduce taxes on capital gains, to increase personal savings incentives, and to improve semiconductor manufacturing equipment depreciation rules. The results of the qualitative analysis of the proposals as well as a description of the methodology employed are given.

Precision depth measurement of through silicon vias (TSVs) on 3D semiconductor packaging process.

PubMed

Jin, Jonghan; Kim, Jae Wan; Kang, Chu-Shik; Kim, Jong-Ahn; Lee, Sunghun

2012-02-27

We have proposed and demonstrated a novel method to measure depths of through silicon vias (TSVs) at high speed. TSVs are fine and deep holes fabricated in silicon wafers for 3D semiconductors; they are used for electrical connections between vertically stacked wafers. Because the high-aspect ratio hole of the TSV makes it difficult for light to reach the bottom surface, conventional optical methods using visible lights cannot determine the depth value. By adopting an optical comb of a femtosecond pulse laser in the infra-red range as a light source, the depths of TSVs having aspect ratio of about 7 were measured. This measurement was done at high speed based on spectral resolved interferometry. The proposed method is expected to be an alternative method for depth inspection of TSVs.

Strain-engineered inverse charge-funnelling in layered semiconductors.

PubMed

De Sanctis, Adolfo; Amit, Iddo; Hepplestone, Steven P; Craciun, Monica F; Russo, Saverio

2018-04-25

The control of charges in a circuit due to an external electric field is ubiquitous to the exchange, storage and manipulation of information in a wide range of applications. Conversely, the ability to grow clean interfaces between materials has been a stepping stone for engineering built-in electric fields largely exploited in modern photovoltaics and opto-electronics. The emergence of atomically thin semiconductors is now enabling new ways to attain electric fields and unveil novel charge transport mechanisms. Here, we report the first direct electrical observation of the inverse charge-funnel effect enabled by deterministic and spatially resolved strain-induced electric fields in a thin sheet of HfS 2 . We demonstrate that charges driven by these spatially varying electric fields in the channel of a phototransistor lead to a 350% enhancement in the responsivity. These findings could enable the informed design of highly efficient photovoltaic cells.

[Research on cleaning rate of the C-shaped canal treated by manual or rotary endodontic file combined with ultrasonic rinsing].

PubMed

Wang, Jing; Gao, Yan; Wang, Qing-shan; Zhang, Yan; Rong, Li; Wang, Jiu

2014-08-01

To evaluate the cleaning effect of the C-shaped canal treated by manual K file and ProTaper rotary endodontic file combined with ultrasonic cleaning, and find a better cleaning program for the C-shaped root canal. Fifty mandibular second molars were randomly divided into 5 groups: K file group, K file+ultrasonic rinsing group, ProTaper group, ProTaper+ultrasonic rinsing group and the control group. After initial shaping and cleaning, the mandibular second molars were soaked in formalin and stained. Under microscopy, the cleaning rate of necrotic tissue and cutting area were observed and analyzed. The data was processed with SPSS 17.0 software package. The cleaning rates of the treated groups were significantly higher than that of the control group (P<0.05); In each treatment group, the cleaning rate of the apex was significantly lower than that of the crown and central part (P<0.05); The cutting score of ProTaper+ultrasonic cleaning group was lower than that of the other treatment groups; The cutting score of the K file+ultrasonic rinsing group was significantly lower than that of the K file group (P<0.05); The cutting score and cleaning rate were negatively correlated (r=-0.712, P=0.000 ), the linear regression was the cleaning rate =98.325-4.325 × wall cutting score (R=0.454, P<0.05). In the process of shaping and cleaning of C-shaped canal, it is recommended that the ProTaper nickel-titanium rotary endodontic file should be chosen to clean the top of the taproot pipe and combined with ultrasonic rinsing to achieve better results.

Measurement of toxic volatile organic compounds in indoor air of semiconductor foundries using multisorbent adsorption/thermal desorption coupled with gas chromatography-mass spectrometry.

PubMed

Wu, Chien-Hou; Lin, Ming-Nan; Feng, Chien-Tai; Yang, Kuang-Ling; Lo, Yu-Shiu; Lo, Jiunn-Guang

2003-05-09

A method for the qualitative and quantitative analysis of volatile organic compounds (VOCs) in the air of class-100 clean rooms at semiconductor fabrication facilities was developed. Air samples from two semiconductor factories were collected each hour on multisorbent tubes (including Carbopack B, Carbopack C, and Carbosieve SIII) with a 24-h automatic active sampling system and analyzed using adsorption/thermal desorption coupled with gas chromatography-mass spectrometry. Experimental parameters, including thermal desorption temperature, desorption time, and cryofocusing temperature, were optimized. The average recoveries and the method detection limits for the target compounds were in the range 94-101% and 0.31-0.89 ppb, respectively, under the conditions of a 1 L sampling volume and 80% relative humidity. VOCs such as acetone, isopropyl alcohol, 2-heptanone, and toluene, which are commonly used in the semiconductor and electronics industries, were detected and accurately quantified with the established method. Temporal variations of the analyte concentrations observed were attributed to the improper use of organic solvents during operation.

Optical orientation in ferromagnet/semiconductor hybrids

NASA Astrophysics Data System (ADS)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

NASA Astrophysics Data System (ADS)

Ólafsson, Sveinn; Sveinbjörnsson, Einar

2010-12-01

A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

Wave-front propagation of rinsing flows on rotating semiconductor wafers

NASA Astrophysics Data System (ADS)

Frostad, John M.; Ylitalo, Andy; Walls, Daniel J.; Mui, David S. L.; Fuller, Gerald G.

2016-11-01

The semiconductor manufacturing industry is migrating to a cleaning technology that involves dispersing cleaning solutions onto a rotating wafer, similar to spin-coating. Advantages include a more continuous overall fabrication process, lower particle level, no cross contamination from the back side of a wafer, and less usage of harsh chemicals for a lower environmental impact. Rapid rotation of the wafer during rinsing can be more effective, but centrifugal forces can pull spiral-like ribbons of liquid radially outward from the advancing wave-front where particles can build up, causing higher instances of device failure at these locations. A better understanding of the rinsing flow is essential for reducing yield losses while taking advantage of the benefits of rotation. In the present work, high-speed video and image processing are used to study the dynamics of the advancing wave-front from an impinging jet on a rotating substrate. The flow-rate and rotation-speed are varied for substrates coated with a thin layer of a second liquid that has a different surface tension than the jet liquid. The difference in surface tension of the two fluids gives rise to Marangoni stresses at the interface that have a significant impact on the rinsing process, despite the extremely short time-scales involved.

Semiconductor nanocrystal-based phagokinetic tracking

DOEpatents

Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

2014-11-18

Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

Semiconductor ring lasers subject to both on-chip filtered optical feedback and external conventional optical feedback

NASA Astrophysics Data System (ADS)

Khoder, Mulham; Van der Sande, Guy; Danckaert, Jan; Verschaffelt, Guy

2016-05-01

It is well known that the performance of semiconductor lasers is very sensitive to external optical feedback. This feedback can lead to changes in lasing characteristics and a variety of dynamical effects including chaos and coherence collapse. One way to avoid this external feedback is by using optical isolation, but these isolators and their packaging will increase the cost of the total system. Semiconductor ring lasers nowadays are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. Recently, some of us proposed to combine semiconductor ring lasers with on chip filtered optical feedback to achieve tunable lasers. The feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifier gates are used to control the feedback strength. In this work, we investigate how such lasers with filtered feedback are influenced by an external conventional optical feedback. The experimental results show intensity fluctuations in the time traces in both the clockwise and counterclockwise directions due to the conventional feedback. We quantify the strength of the conventional feedback induced dynamics be extracting the standard deviation of the intensity fluctuations in the time traces. By using filtered feedback, we can shift the onset of the conventional feedback induced dynamics to larger values of the feedback rate [ Khoder et al, IEEE Photon. Technol. Lett. DOI: 10.1109/LPT.2016.2522184]. The on-chip filtered optical feedback thus makes the semiconductor ring laser less senstive to the effect of (long) conventional optical feedback. We think these conclusions can be extended to other types of lasers.

Enabling More than Moore: Accelerated Reliability Testing and Risk Analysis for Advanced Electronics Packaging

NASA Technical Reports Server (NTRS)

Ghaffarian, Reza; Evans, John W.

2014-01-01

For five decades, the semiconductor industry has distinguished itself by the rapid pace of improvement in miniaturization of electronics products-Moore's Law. Now, scaling hits a brick wall, a paradigm shift. The industry roadmaps recognized the scaling limitation and project that packaging technologies will meet further miniaturization needs or ak.a "More than Moore". This paper presents packaging technology trends and accelerated reliability testing methods currently being practiced. Then, it presents industry status on key advanced electronic packages, factors affecting accelerated solder joint reliability of area array packages, and IPC/JEDEC/Mil specifications for characterizations of assemblies under accelerated thermal and mechanical loading. Finally, it presents an examples demonstrating how Accelerated Testing and Analysis have been effectively employed in the development of complex spacecraft thereby reducing risk. Quantitative assessments necessarily involve the mathematics of probability and statistics. In addition, accelerated tests need to be designed which consider the desired risk posture and schedule for particular project. Such assessments relieve risks without imposing additional costs. and constraints that are not value added for a particular mission. Furthermore, in the course of development of complex systems, variances and defects will inevitably present themselves and require a decision concerning their disposition, necessitating quantitative assessments. In summary, this paper presents a comprehensive view point, from technology to systems, including the benefits and impact of accelerated testing in offsetting risk.

Oral Hygiene Practices and Teeth Cleaning Techniques Among Medical Students

PubMed Central

Fatima, Syeda H; Ghazanfar, Haider; Haq, Sana; Khan, Najeeb A; Mehmood, Moeez; Ghazanfar, Ali

2017-01-01

Objectives Oral health is essential for general health and quality of life. It is a state of being free from mouth and facial pain, oral and throat cancer, oral infections and sores, periodontal disease, tooth decay, tooth loss, and other diseases and disorders that limit an individual’s capacity to bite, chew, smile, and speak; it affects psychosocial well-being too. The objective of our study was to assess teeth cleaning techniques and oral hygiene practices among medical students. Methods The data of the study were collected in two stages. The first stage involved the administration of a self-constructed questionnaire among medical students. In the second step, the students were asked to demonstrate their teeth cleaning techniques on a model. A standard teeth cleaning checklist was used to evaluate the students. The students were then given the checklist and a video on teeth cleaning techniques was shown to them. The data obtained was analyzed on IBM's statistical package for the social sciences (SPSS) version 21.  Results Out of a total of 444 students, 256 (57.7 percent) were males while 188 (42.3 percent) were females. About 254 (57.2 percent) participants were preclinical medical students while 190 (42.8 percent) were clinical year medical students. A majority of medical students used medium consistency toothbrushes (177; 39.9 percent) and soft consistency toothbrushes (137; 30.9 percent). Most medical students (248; 55.9 percent) brushed two times a day while 163 (36.7 percent) brushed only one time. About 212 (47.7 percent) of the medical students used mouthwash along with a toothbrush while only 36 (8.1 percent) used floss along with a toothbrush. About 157 participants (35.4 percent) changed their toothbrush once in two months while 132 (26.7 percent) changed their toothbrush once in three months. The mean duration that participants brushed their teeth was 134.99 ± 69.01 seconds. Conclusion Medical students were found to have a faulty teeth

Reducing leakage current in semiconductor devices

DOEpatents

Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

2018-03-06

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

High quality HfO{sub 2}/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm equivalent oxide thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barth, Michael; Datta, Suman, E-mail: sdatta@engr.psu.edu; Bruce Rayner, G.

2014-12-01

We investigate in-situ cleaning of GaSb surfaces and its effect on the electrical performance of p-type GaSb metal-oxide-semiconductor capacitor (MOSCAP) using a remote hydrogen plasma. Ultrathin HfO{sub 2} films grown by atomic layer deposition were used as a high permittivity gate dielectric. Compared to conventional ex-situ chemical cleaning methods, the in-situ GaSb surface treatment resulted in a drastic improvement in the impedance characteristics of the MOSCAPs, directly evidencing a much lower interface trap density and enhanced Fermi level movement efficiency. We demonstrate that by using a combination of ex-situ and in-situ surface cleaning steps, aggressively scaled HfO{sub 2}/p-GaSb MOSCAP structuresmore » with a low equivalent oxide thickness of 0.8 nm and efficient gate modulation of the surface potential are achieved, allowing to push the Fermi level far away from the valence band edge high up into the band gap of GaSb.« less

Chemical cleaning re-invented: clean, lean and green.

PubMed

Hanson, Margaret; Vangeel, Michel

2014-01-01

A project undertaken in the Central Cleaning Department of Janssen, a Johnson and Johnson pharmaceutical company, demonstrates how ergonomics, environmental and industrial hygiene risks and quality concerns can be tackled simultaneously. The way equipment was cleaned was re-designed by an in-house cross-functional team to ensure a 'clean, lean and green' process. Initiatives included a new layout of the area, and new work processes and equipment to facilitate cleaning and handling items. This resulted in significant improvements: all ergonomics high risk tasks were reduced to moderate or low risk; hearing protection was no longer required; respirator requirement reduced by 67%; solvent use reduced by 73%; productivity improved, with 55% fewer operator hours required; and quality improved 40-fold. The return on investment was estimated at 3.125 years based on an investment of over €1.5 million (2008 prices). This win-win intervention allowed ergonomics, environmental, industrial hygiene, productivity and quality concerns all to be addressed.

Fabrication of Semiconductor ZnO Nanostructures for Versatile SERS Application

PubMed Central

Yang, Lili; Yang, Yong; Ma, Yunfeng; Li, Shuai; Wei, Yuquan; Huang, Zhengren; Long, Nguyen Viet

2017-01-01

Since the initial discovery of surface-enhanced Raman scattering (SERS) in the 1970s, it has exhibited a huge potential application in many fields due to its outstanding advantages. Since the ultra-sensitive noble metallic nanostructures have increasingly exposed themselves as having some problems during application, semiconductors have been gradually exploited as one of the critical SERS substrate materials due to their distinctive advantages when compared with noble metals. ZnO is one of the most representative metallic oxide semiconductors with an abundant reserve, various and cost-effective fabrication techniques, as well as special physical and chemical properties. Thanks to the varied morphologies, size-dependent exciton, good chemical stability, a tunable band gap, carrier concentration, and stoichiometry, ZnO nanostructures have the potential to be exploited as SERS substrates. Moreover, other distinctive properties possessed by ZnO such as biocompatibility, photocatcalysis and self-cleaning, and gas- and chemo-sensitivity can be synergistically integrated and exerted with SERS activity to realize the multifunctional potential of ZnO substrates. In this review, we discuss the inevitable development trend of exploiting the potential semiconductor ZnO as a SERS substrate. After clarifying the root cause of the great disparity between the enhancement factor (EF) of noble metals and that of ZnO nanostructures, two specific methods are put forward to improve the SERS activity of ZnO, namely: elemental doping and combination of ZnO with noble metals. Then, we introduce a distinctive advantage of ZnO as SERS substrate and illustrate the necessity of reporting a meaningful average EF. We also summarize some fabrication methods for ZnO nanostructures with varied dimensions (0–3 dimensions). Finally, we present an overview of ZnO nanostructures for the versatile SERS application. PMID:29156600

Electrodes for Semiconductor Gas Sensors

PubMed Central

Lee, Sung Pil

2017-01-01

The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

A Green Clean

ERIC Educational Resources Information Center

Kravitz, Robert

2006-01-01

In the professional cleaning industry, green cleaning has been much discussed in the past few years. Usually, the information pertains to the many reasons why a green cleaning program should be started, the steps involved to get the program off the ground, and the potential benefits. However, although many facility managers and school…

Chip-package nano-structured copper and nickel interconnections with metallic and polymeric bonding interfaces

NASA Astrophysics Data System (ADS)

Aggarwal, Ankur

With the semiconductor industry racing toward a historic transition, nano chips with less than 45 nm features demand I/Os in excess of 20,000 that support computing speed in terabits per second, with multi-core processors aggregately providing highest bandwidth at lowest power. On the other hand, emerging mixed signal systems are driving the need for 3D packaging with embedded active components and ultra-short interconnections. Decreasing I/O pitch together with low cost, high electrical performance and high reliability are the key technological challenges identified by the 2005 International Technology Roadmap for Semiconductors (ITRS). Being able to provide several fold increase in the chip-to-package vertical interconnect density is essential for garnering the true benefits of nanotechnology that will utilize nano-scale devices. Electrical interconnections are multi-functional materials that must also be able to withstand complex, sustained and cyclic thermo-mechanical loads. In addition, the materials must be environmentally-friendly, corrosion resistant, thermally stable over a long time, and resistant to electro-migration. A major challenge is also to develop economic processes that can be integrated into back end of the wafer foundry, i.e. with wafer level packaging. Device-to-system board interconnections are typically accomplished today with either wire bonding or solders. Both of these are incremental and run into either electrical or mechanical barriers as they are extended to higher density of interconnections. Downscaling traditional solder bump interconnect will not satisfy the thermo-mechanical reliability requirements at very fine pitches of the order of 30 microns and less. Alternate interconnection approaches such as compliant interconnects typically require lengthy connections and are therefore limited in terms of electrical properties, although expected to meet the mechanical requirements. A novel chip-package interconnection technology is

Method of passivating semiconductor surfaces

DOEpatents

Wanlass, Mark W.

1990-01-01

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Semiconductor structure and recess formation etch technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

2017-02-14

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching processmore » stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.« less

Characterization of a High-SpeedHigh-Power Semiconductor Master-Oscillator Power-Amplifier (MOPA) Laser as a Free-Space Transmitter

NASA Astrophysics Data System (ADS)

Wright, M. W.

2000-04-01

Semiconductor lasers offer promise as high-speed transmitters for free-space optical communication systems. This article examines the performance of a semiconductor laser system in a master-oscillator power-amplifier (MOPA) geometry developed through a Small Business Innovation Research (SBIR) contract with SDL, Inc. The compact thermo-electric cooler (TEC) packaged device is capable of 1-W output optical power at greater than 2-Gb/s data rates and a wavelength of 960 nm. In particular, we have investigated the effects of amplified spontaneous emission on the modulation extinction ratio and bit-error rate (BER) performance. BERs of up to 10^(-9) were possible at 1.4 Gb/s; however, the modulation extinction ratio was limited to 6 dB. Other key parameters for a free-space optical transmitter, such as the electrical-optical efficiency (24 percent) and beam quality, also were measured.

Metal-Insulator-Semiconductor Photodetectors

PubMed Central

Lin, Chu-Hsuan; Liu, Chee Wee

2010-01-01

The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

Surface modification of food contact materials for processing and packaging applications

NASA Astrophysics Data System (ADS)

Barish, Jeffrey A.

This body of work investigates various techniques for the surface modification of food contact materials for use in food packaging and processing applications. Nanoscale changes to the surface of polymeric food packaging materials enables changes in adhesion, wettability, printability, chemical functionality, and bioactivity, while maintaining desirable bulk properties. Polymer surface modification is used in applications such as antimicrobial or non-fouling materials, biosensors, and active packaging. Non-migratory active packagings, in which bioactive components are tethered to the package, offer the potential to reduce the need for additives in food products while maintaining safety and quality. A challenge in developing non-migratory active packaging materials is the loss of biomolecular activity that can occur when biomolecules are immobilized. Polyethylene glycol (PEG), a biocompatible polymer, is grafted from the surface of ozone treated low-density polyethylene (LDPE) resulting in a surface functionalized polyethylene to which a range of amine-terminated bioactive molecules can be immobilized. The grafting of PEG onto the surface of polymer packaging films is accomplished by free radical graft polymerization, and to covalently link an amine-terminated molecule to the PEG tether, demonstrating that amine-terminated bioactive compounds (such as peptides, enzymes, and some antimicrobials) can be immobilized onto PEG-grafted LDPE in the development of non-migratory active packaging. Fouling on food contact surfaces during food processing has a significant impact on operating efficiency and can promote biofilm development. Processing raw milk on plate heat exchangers results in significant fouling of proteins as well as minerals, and is exacerbated by the wall heating effect. An electroless nickel coating is co-deposited with polytetrafluoroethylene onto stainless steel to test its ability to resist fouling on a pilot plant scale plate heat exchanger. Further

Semiconductor devices incorporating multilayer interference regions

DOEpatents

Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

1990-01-01

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

Parallel-plate wet denuder coupled ion chromatograph for near-real-time detection of trace acidic gases in clean room air.

PubMed

Takeuchi, Masaki; Tsunoda, Hiromichi; Tanaka, Hideji; Shiramizu, Yoshimi

2011-01-01

This paper describes the performance of our automated acidic (CH(3)COOH, HCOOH, HCl, HNO(2), SO(2), and HNO(3)) gases monitor utilizing a parallel-plate wet denuder (PPWD). The PPWD quantitatively collects gaseous contaminants at a high sample flow rate (∼8 dm(3) min(-1)) compared to the conventional methods used in a clean room. Rapid response to any variability in the sample concentration enables near-real-time monitoring. In the developed monitor, the analyte collected with the PPWD is pumped into one of two preconcentration columns for 15 min, and determined by means of ion chromatography. While one preconcentration column is used for chromatographic separation, the other is used for loading the sample solution. The system allows continuous monitoring of the common acidic gases in an advanced semiconductor manufacturing clean room. 2011 © The Japan Society for Analytical Chemistry

Bio-Inspired Self-Cleaning Surfaces

NASA Astrophysics Data System (ADS)

Liu, Kesong; Jiang, Lei

2012-08-01

Self-cleaning surfaces have drawn a lot of interest for both fundamental research and practical applications. This review focuses on the recent progress in mechanism, preparation, and application of self-cleaning surfaces. To date, self-cleaning has been demonstrated by the following four conceptual approaches: (a) TiO2-based superhydrophilic self-cleaning, (b) lotus effect self-cleaning (superhydrophobicity with a small sliding angle), (c) gecko setae-inspired self-cleaning, and (d) underwater organisms-inspired antifouling self-cleaning. Although a number of self-cleaning products have been commercialized, the remaining challenges and future outlook of self-cleaning surfaces are also briefly addressed. Through evolution, nature, which has long been a source of inspiration for scientists and engineers, has arrived at what is optimal. We hope this review will stimulate interdisciplinary collaboration among material science, chemistry, biology, physics, nanoscience, engineering, etc., which is essential for the rational design and reproducible construction of bio-inspired multifunctional self-cleaning surfaces in practical applications.

Semiconductor electrode with improved photostability characteristics

DOEpatents

Frank, A.J.

1985-02-19

An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

Semiconductor electrode with improved photostability characteristics

DOEpatents

Frank, Arthur J.

1987-01-01

An electrode is disclosed for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode includes a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

Method of passivating semiconductor surfaces

DOEpatents

Wanlass, M.W.

1990-06-19

A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Mouse Cleaning Apparatus and Method

NASA Technical Reports Server (NTRS)

Williams, Glenn L. (Inventor)

2005-01-01

The method of using the mouse pad cleaning apparatus is disclosed and claimed. The method comprises the steps of uncovering the mouse cleaning surface, applying the mouse and ball of the mouse to the cleaning surface, moving the mouse in a rotational pattern on the mouse cleaning surface, removing the mouse form the mouse cleaning surface, washing the cleaning surface, and covering the mouse cleaning surface. A mouse pad cleaning apparatus comprising a plurality of substrates, each said substrate having adhesive thereon, said plurality of substrates residing in and affixed to a receptacle. A single substrate having adhesive, which may be washable or non-washable, thereon may be employed. The washable adhesive may be an organopolysiloxane or gelatinous elastomer.

Semiconductor devices incorporating multilayer interference regions

DOEpatents

Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

1987-08-31

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

PubMed

Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

2015-12-23

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

Using a Data Quality Framework to Clean Data Extracted from the Electronic Health Record: A Case Study

PubMed Central

Dziadkowiec, Oliwier; Callahan, Tiffany; Ozkaynak, Mustafa; Reeder, Blaine; Welton, John

2016-01-01

Objectives: We examine the following: (1) the appropriateness of using a data quality (DQ) framework developed for relational databases as a data-cleaning tool for a data set extracted from two EPIC databases, and (2) the differences in statistical parameter estimates on a data set cleaned with the DQ framework and data set not cleaned with the DQ framework. Background: The use of data contained within electronic health records (EHRs) has the potential to open doors for a new wave of innovative research. Without adequate preparation of such large data sets for analysis, the results might be erroneous, which might affect clinical decision-making or the results of Comparative Effectives Research studies. Methods: Two emergency department (ED) data sets extracted from EPIC databases (adult ED and children ED) were used as examples for examining the five concepts of DQ based on a DQ assessment framework designed for EHR databases. The first data set contained 70,061 visits; and the second data set contained 2,815,550 visits. SPSS Syntax examples as well as step-by-step instructions of how to apply the five key DQ concepts these EHR database extracts are provided. Conclusions: SPSS Syntax to address each of the DQ concepts proposed by Kahn et al. (2012)1 was developed. The data set cleaned using Kahn’s framework yielded more accurate results than the data set cleaned without this framework. Future plans involve creating functions in R language for cleaning data extracted from the EHR as well as an R package that combines DQ checks with missing data analysis functions. PMID:27429992

Piezo-based motion stages for heavy duty operation in clean environments

NASA Astrophysics Data System (ADS)

Karasikov, Nir; Peled, Gal; Yasinov, Roman; Gissin, Michael; Feinstein, Alan

2018-02-01

A range of heavy duty, ultra-precise motion stages had been developed for precise positioning in semiconductor manufacturing and metrology, for use in a clean room and high vacuum (HV and UHV) environments, to meet the precision requirements for 7, 5 nm nodes and beyond. These stages are powered by L1B2 direct drive ultrasonic motors, which allows combining long motion range, sub-nanometer positioning accuracy, high stiffness (in the direction of motion), low power consumption and active compensation of thermal and structural drift while holding position. The mechanical design, material selection for clean room and high vacuum preparation techniques are reviewed. Test results in a clean room are reported for a two-axis (X-Y) stage, having a load capacity of 30 kg, a motion range of 450 mm, a positioning accuracy of < 1 nm, a maximum motion speed of > 200 mm/s and a < 2 nm position stability (3 sigma). Long term drift compensation to sub-nm level, against thermal drift, has been validated for more than 10 hours. Heavy duty operation in a high vacuum is exemplified via a single axis stage operating at 5E-7 Torr, having a moving mass of 0.96 kg, oriented against gravity. The stage is operated periodically (up and down) over a travel length of 45 mm. The motion profile has a trapezoidal shape with an acceleration of 1m/s2 and a constant velocity of 100 mm/s. The operational parameters (average absolute position error during constant velocity, motor force, dead zone level) remain stable over more than 370000 passes (experiment duration).

Diamond-based heat spreaders for power electronic packaging applications

NASA Astrophysics Data System (ADS)

Guillemet, Thomas

As any semiconductor-based devices, power electronic packages are driven by the constant increase of operating speed (higher frequency), integration level (higher power), and decrease in feature size (higher packing density). Although research and innovation efforts have kept these trends continuous for now more than fifty years, the electronic packaging technology is currently facing a challenge that must be addressed in order to move toward any further improvements in terms of performances or miniaturization: thermal management. Thermal issues in high-power packages strongly affect their reliability and lifetime and have now become one of the major limiting factors of power modules development. Thus, there is a strong need for materials that can sustain higher heat flux levels while safely integrating into the electronic package architecture. In such context, diamond is an attractive candidate because of its outstanding thermal conductivity, low thermal expansion, and high electrical resistivity. Its low heat capacity relative to metals such as aluminum or copper makes it however preferable for heat spreading applications (as a heat-spreader) rather than for dissipating the heat flux itself (as a heat sink). In this study, a dual diamond-based heat-spreading solution is proposed. Polycrystalline diamond films were grown through laser-assisted combustion synthesis on electronic substrates (in the U.S) while, in parallel, diamond-reinforced copper-matrix composite films were fabricated through tape casting and hot pressing (in France). These two types of diamond-based heat-spreading films were characterized and their microstructure and chemical composition were related to their thermal performances. Particular emphasize was put on the influence of interfaces on the thermal properties of the materials, either inside a single material (grain boundaries) or between dissimilar materials (film/substrate interface, matrix/reinforcement interface). Finally, the packaging

Industrial packaging and assembly infrastructure for MOEMS

NASA Astrophysics Data System (ADS)

van Heeren, Henne

2004-01-01

, packaging and assembly is from nature application specific and solutions found are not always transferable from one product to another. But designers can often benefit from experience from other and general available technologies. A number of companies offer packaging and assembly services for MEMS/MST and this report give typical examples of those commercial services. The companies range from small start-ups, offering very specialized services, to large semiconductor packaging companies, having production lines for microsystem based products. Selecting the proper packaging method may tip the scales towards a product success or towards a product failure, while it nearly always present s a substantial part of the cost of the product. This is therefore is not a marginal concern, but a crucial part of the product design. The presentation will also address mayor trends and technologies. Finally, the article provides sufficient levels of classification and categorisation for various aspects for the technologies, in specific, and the industry, in general, to provide particularly useful insights into the activities and the developments in this market. With over 50 companies studied and assessed, it provides an up to date account of the state of this business and its future potential.

MOlecular MAterials Property Prediction Package (MOMAP) 1.0: a software package for predicting the luminescent properties and mobility of organic functional materials

NASA Astrophysics Data System (ADS)

Niu, Yingli; Li, Wenqiang; Peng, Qian; Geng, Hua; Yi, Yuanping; Wang, Linjun; Nan, Guangjun; Wang, Dong; Shuai, Zhigang

2018-04-01

MOlecular MAterials Property Prediction Package (MOMAP) is a software toolkit for molecular materials property prediction. It focuses on luminescent properties and charge mobility properties. This article contains a brief descriptive introduction of key features, theoretical models and algorithms of the software, together with examples that illustrate the performance. First, we present the theoretical models and algorithms for molecular luminescent properties calculation, which includes the excited-state radiative/non-radiative decay rate constant and the optical spectra. Then, a multi-scale simulation approach and its algorithm for the molecular charge mobility are described. This approach is based on hopping model and combines with Kinetic Monte Carlo and molecular dynamics simulations, and it is especially applicable for describing a large category of organic semiconductors, whose inter-molecular electronic coupling is much smaller than intra-molecular charge reorganisation energy.

A Commercial IOTV Cleaning Study

DTIC Science & Technology

2010-04-12

manufacturer’s list price without taking into consideration of possible volume discount.  Equipment depreciation cost was calculated based on...Laundering with Prewash Spot Cleaning) 32 Table 12 Shrinkage Statistical Data (Traditional Wet Laundering without Prewash Spot Cleaning...Statistical Data (Computer-controlled Wet Cleaning without Prewash Spot Cleaning) 35 Table 15 Shrinkage Statistical Data (Liquid CO2 Cleaning

Latest technologies on ultrasonic cleaning

NASA Astrophysics Data System (ADS)

Hofstetter, Hans U.

2007-05-01

UCM-AG manufactures Ultrasonic Cleaning Machines for highest quality requirements. The company has the know-how for cleaning and supplies cleaning systems together with the cleaning process. With a UCM of Switzerland Cleaning System, the customer gets the system itself, the cleaning process with a guarantee for the specified result but also all auxiliary equipment needed for perfect results. Therefore UCM also supplies fixtures, linkage to existing automated fabrication facilities water treatment plants etc. Thus the UCM customer gets a turnkey installation - ready to operate and including know-how. UCM of Switzerland will describe the latest technology in ultrasonic precision cleaning on the example of a recent and sophisticated installation. The installation consists of three interlinked cleaning systems which operate completely automated. The 1st system is designed for pre-cleaning to remove waxes, pitch and protection lacquers with environmentally friendly solvents which are non hazardous to the health of the operators. The 2nd system cleans the parts prior to inspection and operates with neutral or slightly alkaline detergents. The 3rd system is designed for final cleaning prior to vacuum coating and perfect results are required. It combines cleaning tanks and DI-Water rinse with lift out and vacuum dryer. The installation combines the latest technologies in ultrasonic cleaning for precision optical components. The system employs multi frequency immersed ultrasonic transducers and special rinsing technologies The complete installation will be explained in detail; the concept in its whole, the lay out, the particular setup of each cleaning system etc. will be shown and explained together with construction particulars of the complete installation.

Comparison of washer-disinfector cleaning indicators: impact of temperature and cleaning cycle parameters.

PubMed

Alfa, Michelle J; Olson, Nancy

2014-02-01

Because automated instrument washer-disinfectors (WD) are widely used in health care to reprocess a variety of medical instruments, we developed a study to compare 3 cleaning indicators to determine whether they detected suboptimal temperature, time, enzymatic detergent, and fluid action in a washer-disinfector. The Miele WD was used for this comparison. One optimal cycle and 14 cycles with suboptimal enzymatic detergent, cleaning time, temperature, or inactive spray arms were evaluated. The cleaning indicators evaluated included the following: Pinnacle Monitor for Automated Enzymatic Cleaning Process (PNCL), Wash-Checks (WC), and TOSI. The scoring system for all 3 indicators was harmonized to a common scale. Soiled tweezers were included in each cycle evaluated. The PNCL, TOSI, and WC cleaning indicators showed significantly more failures at 40°C compared with 60°C (100% vs 0% for PNCL, 17% vs 0% for TOSI, and 60% vs 22% for WC, respectively). There were significantly more failures at suboptimal temperatures with a 2- versus 4-minute cycle (100% vs 0% for PNCL, 17% vs 0% for TOSI, and 17% vs 0% for WC, respectively, for 40°C cycles). Despite suboptimal cleaning cycles, all soiled tweezers looked clean. All 3 cleaning indicators responded to suboptimal WD conditions; however, the PNCL was the most affected by alterations in the cycle conditions evaluated. In simulated use testing, cleaning indicators provided a more sensitive audit tool compared with visual inspection of soiled instruments after automated cleaning. Copyright © 2014 Association for Professionals in Infection Control and Epidemiology, Inc. Published by Mosby, Inc. All rights reserved.

Infrared spectroscopic ellipsometry in semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Guittet, Pierre-Yves; Mantz, Ulrich; Weidner, Peter; Stehle, Jean-Louis; Bucchia, Marc; Bourtault, Sophie; Zahorski, Dorian

2004-05-01

Infrared spectroscopic ellipsometry (IRSE) metrology is an emerging technology in semiconductor production environment. Infineon Technologies SC300 implemented the first worldwide automated IRSE in a class 1 clean room in 2002. Combining properties of IR light -- large wavelength, low absorption in silicon -- with a short focus optics -- no backside reflection -- which allow model-based analysis, a large number of production applications were developed. Part of Infineon IRSE development roadmap is now focused on depth monitoring for arrays of 3D dry-etched structures. In trench DRAM manufacturing, the areal density is high, and critical dimensions are much lower than mid-IR wavelength. Therefore, extensive use of effective medium theory is made to model 3D structures. IR-SE metrology is not limited by shrinking critical dimensions, as long as the areal density is above a specific cut-off value determined by trenches dimensions, trench-filling and surrounding materials. Two applications for depth monitoring are presented. 1D models were developed and successfully applied to the DRAM trench capacitor structures. Modeling and correlation to reference methods are shown as well as dynamic repeatability and gauge capability results. Limitations of the current tool configuration are reviewed for shallow structures.

Resin bleed improvement on surface mount semiconductor device

NASA Astrophysics Data System (ADS)

Rajoo, Indra Kumar; Tahir, Suraya Mohd; Aziz, Faieza Abdul; Shamsul Anuar, Mohd

2018-04-01

Resin bleed is a transparent layer of epoxy compound which occurs during molding process but is difficult to be detected after the molding process. Resin bleed on the lead on the unit from the focused package, SOD123, can cause solderability failure at end customer. This failed unit from the customer will be considered as a customer complaint. Generally, the semiconductor company has to perform visual inspection after the plating process to detect resin bleed. Mold chase with excess hole, split cavity & stepped design ejector pin hole have been found to be the major root cause of resin bleed in this company. The modifications of the mold chase, changing of split cavity to solid cavity and re-design of the ejector pin proposed were derived after a detailed study & analysis conducted to arrive at these solutions. The solutions proposed have yield good results during the pilot run with zero (0) occurrence of resin bleed for 3 consecutive months.

Precision cleaning apparatus and method

DOEpatents

Schneider, T.W.; Frye, G.C.; Martin, S.J.

1998-01-13

A precision cleaning apparatus and method are disclosed. The precision cleaning apparatus includes a cleaning monitor further comprising an acoustic wave cleaning sensor such as a quartz crystal microbalance (QCM), a flexural plate wave (FPW) sensor, a shear horizontal acoustic plate mode (SH--APM) sensor, or a shear horizontal surface acoustic wave (SH--SAW) sensor; and measurement means connectable to the sensor for measuring in-situ one or more electrical response characteristics that vary in response to removal of one or more contaminants from the sensor and a workpiece located adjacent to the sensor during cleaning. Methods are disclosed for precision cleaning of one or more contaminants from a surface of the workpiece by means of the cleaning monitor that determines a state of cleanliness and any residual contamination that may be present after cleaning; and also for determining an effectiveness of a cleaning medium for removing one or more contaminants from a workpiece. 11 figs.

Precision cleaning apparatus and method

DOEpatents

Schneider, Thomas W.; Frye, Gregory C.; Martin, Stephen J.

1998-01-01

A precision cleaning apparatus and method. The precision cleaning apparatus includes a cleaning monitor further comprising an acoustic wave cleaning sensor such as a quartz crystal microbalance (QCM), a flexural plate wave (FPW) sensor, a shear horizontal acoustic plate mode (SH--APM) sensor, or a shear horizontal surface acoustic wave (SH--SAW) sensor; and measurement means connectable to the sensor for measuring in-situ one or more electrical response characteristics that vary in response to removal of one or more contaminants from the sensor and a workpiece located adjacent to the sensor during cleaning. Methods are disclosed for precision cleaning of one or more contaminants from a surface of the workpiece by means of the cleaning monitor that determines a state of cleanliness and any residual contamination that may be present after cleaning; and also for determining an effectiveness of a cleaning medium for removing one or more contaminants from a workpiece.

Supersonic Gas-Liquid Cleaning System

NASA Technical Reports Server (NTRS)

Kinney, Frank

1996-01-01

The Supersonic Gas-Liquid Cleaning System Research Project consisted mainly of a feasibility study, including theoretical and engineering analysis, of a proof-of-concept prototype of this particular cleaning system developed by NASA-KSC. The cleaning system utilizes gas-liquid supersonic nozzles to generate high impingement velocities at the surface of the device to be cleaned. The cleaning fluid being accelerated to these high velocities may consist of any solvent or liquid, including water. Compressed air or any inert gas is used to provide the conveying medium for the liquid, as well as substantially reduce the total amount of liquid needed to perform adequate surface cleaning and cleanliness verification. This type of aqueous cleaning system is considered to be an excellent way of conducting cleaning and cleanliness verification operations as replacements for the use of CFC 113 which must be discontinued by 1995. To utilize this particular cleaning system in various cleaning applications for both the Space Program and the commercial market, it is essential that the cleaning system, especially the supersonic nozzle, be characterized for such applications. This characterization consisted of performing theoretical and engineering analysis, identifying desirable modifications/extensions to the basic concept, evaluating effects of variations in operating parameters, and optimizing hardware design for specific applications.

Stable surface passivation process for compound semiconductors

DOEpatents

Ashby, Carol I. H.

2001-01-01

A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

Room-temperature ductile inorganic semiconductor.

PubMed

Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

2018-05-01

Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag 2 S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

Room-temperature ductile inorganic semiconductor

NASA Astrophysics Data System (ADS)

Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

2018-05-01

Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

Recovery of PET from packaging plastics mixtures by wet shaking table.

PubMed

Carvalho, M T; Agante, E; Durão, F

2007-01-01

Recycling requires the separation of materials appearing in a mass of wastes of heterogeneous composition and characteristics, into single, almost pure, component/material flows. The separation of materials (e.g., some types of plastics) with similar physical properties (e.g., specific gravity) is often accomplished by human sorting. This is the case of the separation of packaging plastics in municipal solid wastes (MSW). The low cost of virgin plastics and low value of recycled plastics necessitate the utilization of low cost techniques and processes in the recycling of packaging plastics. An experimental study was conducted to evaluate the feasibility of production of a PET product, cleaned from PVC and PS, using a wet shaking table. The wet shaking table is an environmentally friendly process, widely used to separate minerals, which has low capital and operational costs. Some operational variables of the equipment, as well as different feed characteristics, were considered. The results show that the separation of these plastics is feasible although, similarly to the mineral field, in somewhat complex flow sheets.

Processing of semiconductors and thin film solar cells using electroplating

NASA Astrophysics Data System (ADS)

Madugu, Mohammad Lamido

The global need for a clean, sustainable and affordable source of energy has triggered extensive research especially in renewable energy sources. In this sector, photovoltaic has been identified as a cheapest, clean and reliable source of energy. It would be of interest to obtain photovoltaic material in thin film form by using simple and inexpensive semiconductor growth technique such as electroplating. Using this growth technique, four semiconductor materials were electroplated on glass/fluorine-doped tin oxide (FTO) substrate from aqueous electrolytes. These semiconductors are indium selenide (In[x]Sey), zinc sulphide (ZnS), cadmium sulphide (CdS) and cadmium telluride (CdTe). In[x]Se[y] and ZnS were incorporated as buffer layers while CdS and CdTe layers were utilised as window and absorber layers respectively. All materials were grown using two-electrode (2E) system except for CdTe which was grown using 3E and 2E systems for comparison. To fully optimise the growth conditions, the as-deposited and annealed layers from all the materials were characterised for their structural, morphological, optical, electrical and defects structures using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), optical absorption (UV-Vis spectroscopy), photoelectrochemical (PEC) cell measurements, current-voltage (I-V), capacitance-voltage (C-V), DC electrical measurements, ultraviolet photoelectron spectroscopy (UPS) and photoluminescence (PL) techniques. Results show that InxSey and ZnS layers were amorphous in nature and exhibit both n-type and p-type in electrical conduction. CdS layers are n-type in electrical conduction and show hexagonal and cubic phases in both the as-deposited and after annealing process. CdTe layers show cubic phase structure with both n-type and p-type in electrical conduction. CdTe-based solar cell structures with a n-n heterojunction plus large Schottky barrier, as well as multi-layer graded

49 CFR 173.24 - General requirements for packagings and packages.

Code of Federal Regulations, 2011 CFR

2011-10-01

...) New packagings and packagings which are reused; and (3) Specification and non-specification packagings..., sufficient ullage (outage) must be left to ensure that neither leakage nor permanent distortion of the...

Cleaning devices

NASA Technical Reports Server (NTRS)

Schneider, Horst W. (Inventor)

1981-01-01

Cleaning devices are described which include a vacuum cleaner nozzle with a sharp rim for directing incoming air down against the floor; a vacuum cleaner wherein electrostatically charged brushes that brush dirt off a floor, are electrically grounded to remove charges that could tend to hold dirt to the brushes; a vacuum cleaner head having slots that form a pair of counter-rotating vortices, and that includes an outlet that blows a stream of air at the floor region which lies between the vortices; a cleaning device that sweeps a group of brushes against the ground along a first direction, and then sweeps them along the same ground area but in a second direction angled from the first by an amount such as 90.degree., to sweep up particles lying in crevices extending along any direction; a device that gently cleans a surface to remove bacteria for analysis, including an inclined wall along which cleaning fluid flows onto the surface, a vacuum chamber for drawing in the cleaning fluid, and a dividing wall spaced slightly from the surface to separate the fluid source from the vacuum cleaner chamber; and a device for providing pulses of pressured air including a chamber to which pressured air is supplied, a ball that circulates around the chamber to repeatedly close an outlet, and an air source that directs air circumferentially to move the ball around the chamber.

Roadmap on semiconductor-cell biointerfaces

NASA Astrophysics Data System (ADS)

Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

2018-05-01

This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

California Clean Tech

EPA Pesticide Factsheets

The California Clean Air Technology Initiative is a partnership to develop clean air technologies for the San Joaquin Valley and South Coast Air Basins through collaborative projects in technology research, development, demonstration, and deployment.

Introduction to Semiconductor Devices

NASA Astrophysics Data System (ADS)

Brennan, Kevin F.

2005-03-01

This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

Neural Implants, Packaging for Biocompatible Implants, and Improving Fabricated Capacitors

NASA Astrophysics Data System (ADS)

Agger, Elizabeth Rose

We have completed the circuit design and packaging procedure for an NIH-funded neural implant, called a MOTE (Microscale Optoelectronically Transduced Electrode). Neural recording implants for mice have greatly advanced neuroscience, but they are often damaging and limited in their recording location. This project will result in free-floating implants that cause less damage, provide rapid electronic recording, and increase range of recording across the cortex. A low-power silicon IC containing amplification and digitization sub-circuits is powered by a dual-function gallium arsenide photovoltaic and LED. Through thin film deposition, photolithography, and chemical and physical etching, the Molnar Group and the McEuen Group (Applied and Engineering Physics department) will package the IC and LED into a biocompatible implant approximately 100microm3. The IC and LED are complete and we have begun refining this packaging procedure in the Cornell NanoScale Science & Technology Facility. ICs with 3D time-resolved imaging capabilities can image microorganisms and other biological samples given proper packaging. A portable, flat, easily manufactured package would enable scientists to place biological samples on slides directly above the Molnar group's imaging chip. We have developed a packaging procedure using laser cutting, photolithography, epoxies, and metal deposition. Using a flip-chip method, we verified the process by aligning and adhering a sample chip to a holder wafer. In the CNF, we have worked on a long-term metal-insulator-metal (MIM) capacitor characterization project. Former Fellow and continuing CNF user Kwame Amponsah developed the original procedure for the capacitor fabrication, and another former fellow, Jonilyn Longenecker, revised the procedure and began the arduous process of characterization. MIM caps are useful to clean room users as testing devices to verify electronic characteristics of their active circuitry. This project's objective is to

New developments in power semiconductors

NASA Technical Reports Server (NTRS)

Sundberg, G. R.

1983-01-01

This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

Cleaning agents and asthma.

PubMed

Quirce, S; Barranco, P

2010-01-01

Although cleaners represent a significant part of the working population worldwide, they remain a relatively understudied occupational group. Epidemiological studies have shown an association between cleaning work and asthma, but the risk factors are uncertain. Cleaning workers are exposed to a large variety of cleaning products containing both irritants and sensitizers, as well as to common indoor allergens and pollutants. Thus, the onset or aggravation of asthma in this group could be related to an irritant-induced mechanism or to specific sensitization. The main sensitizers contained in cleaning products are disinfectants, quaternary ammonium compounds (such as benzalkonium chloride), amine compounds, and fragrances.The strongest airway irritants in cleaning products are bleach (sodium hypochlorite), hydrochloric acid, and alkaline agents (ammonia and sodium hydroxide), which are commonly mixed together. Exposure to the ingredients of cleaning products may give rise to both new-onset asthma, with or without a latency period, and work-exacerbated asthma. High-level exposure to irritants may induce reactive airways dysfunction syndrome. Cleaning workers may also have a greater relative risk of developing asthma due to prolonged low-to-moderate exposure to respiratory irritants. In addition, asthma-like symptoms without confirmed asthma are also common after exposure to cleaning agents. In many cleaners, airway symptoms induced by chemicals and odors cannot be explained by allergic or asthmatic reactions. These patients may have increased sensitivity to inhaled capsaicin, which is known to reflect sensory reactivity, and this condition is termed airway sensory hyperreactivity.

Performance of Nonmigratory Iron Chelating Active Packaging Materials in Viscous Model Food Systems.

PubMed

Roman, Maxine J; Decker, Eric A; Goddard, Julie M

2015-09-01

Many packaged food products undergo quality deterioration due to iron promoted oxidative reactions. Recently, we have developed a nonmigratory iron chelating active packaging material that represents a novel approach to inhibit oxidation of foods while addressing consumer demands for "cleanˮ labels. A challenge to the field of nonmigratory active packaging is ensuring that surface-immobilized active agents retain activity in a true food system despite diffusional limitations. Yet, the relationship between food viscosity and nonmigratory active packaging activity retention has never been characterized. The objective of this study was to investigate the influence of food viscosity on iron chelation by a nonmigratory iron chelating active packaging material. Methyl cellulose was added to aqueous buffered iron solutions to yield model systems with viscosities ranging from ∼1 to ∼10(5)  mPa·s, representing viscosities ranging from beverage to mayonnaise. Iron chelation was quantified by material-bound iron content using colorimetry and inductively coupled plasma-optical emission spectrometry (ICP-OES).  Maximum iron chelation was reached in solutions up to viscosity ∼10(2)  mPa·s. In more viscous solutions (up to ∼10(4)  mPa·s), there was a significant decrease in iron chelating capacity (P < 0.05). However, materials still retained at least 76% iron chelating capacity. Additionally, the influence of different food hydrocolloids on the performance of nonmigratory iron chelating active packaging was characterized. Methyl cellulose and carrageenan did not compete with the material for specific iron chelation (P > 0.05). Materials retained 32% to 45% chelating capacity when in contact with competitively chelating hydrocolloids guar gum, locust bean gum, and xanthan gum. This work demonstrates the potential application of nonmigratory iron chelating active packaging in liquid and semi-liquid foods to allow for the removal of synthetic chelators, while

Advancements in meat packaging.

PubMed

McMillin, Kenneth W

2017-10-01

Packaging of meat provides the same or similar benefits for raw chilled and processed meats as other types of food packaging. Although air-permeable packaging is most prevalent for raw chilled red meat, vacuum and modified atmosphere packaging offer longer shelf life. The major advancements in meat packaging have been in the widely used plastic polymers while biobased materials and their integration into composite packaging are receiving much attention for functionality and sustainability. At this time, active and intelligent packaging are not widely used for antioxidant, antimicrobial, and other functions to stabilize and enhance meat properties although many options are being developed and investigated. The advances being made in nanotechnology will be incorporated into food packaging and presumably into meat packaging when appropriate and useful. Intelligent packaging using sensors for transmission of desired information and prompting of subsequent changes in packaging materials, environments or the products to maintain safety and quality are still in developmental stages. Copyright © 2017 Elsevier Ltd. All rights reserved.

Limonene and tetrahydrofurfuryl alcohol cleaning agent

DOEpatents

Bohnert, George W.; Carter, Richard D.; Hand, Thomas E.; Powers, Michael T.

1996-05-07

The present invention is a tetrahydrofurfuryl alcohol and limonene or terpineol cleaning agent and method for formulating and/or using the cleaning agent. This cleaning agent effectively removes both polar and nonpolar contaminants from various electrical and mechanical parts and is readily used without surfactants, thereby reducing the need for additional cleaning operations. The cleaning agent is warm water rinsable without the use of surfactants. The cleaning agent can be azeotropic, enhancing ease of use in cleaning operations and ease of recycling.

Limonene and tetrahydrofurfurly alcohol cleaning agent

DOEpatents

Bohnert, George W.; Carter, Richard D.; Hand, Thomas E.; Powers, Michael T.

1997-10-21

The present invention is a tetrahydrofurfuryl alcohol and limonene cleaning agent and method for formulating and/or using the cleaning agent. This cleaning agent effectively removes both polar and nonpolar contaminants from various electrical and mechanical parts and is readily used without surfactants, thereby reducing the need for additional cleaning operations. The cleaning agent is warm water rinsable without the use of surfactants. The cleaning agent can be azeotropic, enhancing ease of use in cleaning operations and ease of recycling.

Limonene and tetrahydrofurfuryl alcohol cleaning agent

DOEpatents

Bohnert, G.W.; Carter, R.D.; Hand, T.E.; Powers, M.T.

1997-10-21

The present invention is a tetrahydrofurfuryl alcohol and limonene cleaning agent and method for formulating and/or using the cleaning agent. This cleaning agent effectively removes both polar and nonpolar contaminants from various electrical and mechanical parts and is readily used without surfactants, thereby reducing the need for additional cleaning operations. The cleaning agent is warm water rinsable without the use of surfactants. The cleaning agent can be azeotropic, enhancing ease of use in cleaning operations and ease of recycling.

Exposure Characteristics of Nanoparticles as Process By-products for the Semiconductor Manufacturing Industry.

PubMed

Choi, Kwang-Min; Kim, Jin-Ho; Park, Ju-Hyun; Kim, Kwan-Sick; Bae, Gwi-Nam

2015-01-01

This study aims to elucidate the exposure properties of nanoparticles (NPs; <100 nm in diameter) in semiconductor manufacturing processes. The measurements of airborne NPs were mainly performed around process equipment during fabrication processes and during maintenance. The number concentrations of NPs were measured using a water-based condensation particle counter having a size range of 10-3,000 nm. The chemical composition, size, and shape of NPs were determined by scanning electron microscopy and transmission electron microscopy techniques equipped with energy dispersive spectroscopy. The resulting concentrations of NPs ranged from 0.00-11.47 particles/cm(3). The concentration of NPs measured during maintenance showed a tendency to increase, albeit incrementally, compared to that measured during normal conditions (under typical process conditions without maintenance). However, the increment was small. When comparing the mean number concentration and standard deviation (n ± σ) of NPs, the chemical mechanical polishing (CMP) process was the highest (3.45 ± 3.65 particles/cm(3)), and the dry etch (ETCH) process was the lowest (0.11 ± 0.22 particles/cm(3)). The major NPs observed were silica (SiO2) and titania (TiO2) particles, which were mainly spherical agglomerates ranging in size from 25-280 nm. Sampling of semiconductor processes in CMP, chemical vapor deposition, and ETCH reveled NPs were <100 nm in those areas. On the other hand, particle size exceeded 100 nm in diffusion, metallization, ion implantation, and wet cleaning/etching process. The results show that the SiO2 and TiO2 are the major NPs present in semiconductor cleanroom environments.

Tuning the reactivity of semiconductor surfaces by functionalization with amines of different basicity

PubMed Central

Bent, Stacey F.; Kachian, Jessica S.; Rodríguez-Reyes, Juan Carlos F.; Teplyakov, Andrew V.

2011-01-01

Surface functionalization of semiconductors has been the backbone of the newest developments in microelectronics, energy conversion, sensing device design, and many other fields of science and technology. Over a decade ago, the notion of viewing the surface itself as a chemical reagent in surface reactions was introduced, and adding a variety of new functionalities to the semiconductor surface has become a target of research for many groups. The electronic effects on the substrate have been considered as an important consequence of chemical modification. In this work, we shift the focus to the electronic properties of the functional groups attached to the surface and their role on subsequent reactivity. We investigate surface functionalization of clean Si(100)-2 × 1 and Ge(100)-2 × 1 surfaces with amines as a way to modify their reactivity and to fine tune this reactivity by considering the basicity of the attached functionality. The reactivity of silicon and germanium surfaces modified with ethylamine (CH3CH2NH2) and aniline (C6H5NH2) is predicted using density functional theory calculations of proton attachment to the nitrogen of the adsorbed amine to differ with respect to a nucleophilic attack of the surface species. These predictions are then tested using a model metalorganic reagent, tetrakis(dimethylamido)titanium (((CH3)2N)4Ti, TDMAT), which undergoes a transamination reaction with sufficiently nucleophilic amines, and the reactivity tests confirm trends consistent with predicted basicities. The identity of the underlying semiconductor surface has a profound effect on the outcome of this reaction, and results comparing silicon and germanium are discussed. PMID:21068370

Semiconductor films on flexible iridium substrates

DOEpatents

Goyal, Amit

2005-03-29

A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

Charge regulation at semiconductor-electrolyte interfaces.

PubMed

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2015-07-01

The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

PubMed Central

Irokawa, Yoshihiro

2011-01-01

In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C–V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C–V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C–V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I–V) characterization, suggesting that low-frequency C–V method would be effective in detecting very low hydrogen concentrations. PMID:22346597

Method for removing semiconductor layers from salt substrates

DOEpatents

Shuskus, Alexander J.; Cowher, Melvyn E.

1985-08-27

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

Thiophene-Based Organic Semiconductors.

PubMed

Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

2017-10-24

Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

Packaging Your Training Materials

ERIC Educational Resources Information Center

Espeland, Pamela

1977-01-01

The types of packaging and packaging materials to use for training materials should be determined during the planning of the training programs, according to the packaging market. Five steps to follow in shopping for packaging are presented, along with a list of packaging manufacturers. (MF)

In-Line Detection and Measurement of Molecular Contamination in Semiconductor Process Solutions

NASA Astrophysics Data System (ADS)

Wang, Jason; West, Michael; Han, Ye; McDonald, Robert C.; Yang, Wenjing; Ormond, Bob; Saini, Harmesh

2005-09-01

This paper discusses a fully automated metrology tool for detection and quantitative measurement of contamination, including cationic, anionic, metallic, organic, and molecular species present in semiconductor process solutions. The instrument is based on an electrospray ionization time-of-flight mass spectrometer (ESI-TOF/MS) platform. The tool can be used in diagnostic or analytical modes to understand process problems in addition to enabling routine metrology functions. Metrology functions include in-line contamination measurement with near real-time trend analysis. This paper discusses representative organic and molecular contamination measurement results in production process problem solving efforts. The examples include the analysis and identification of organic compounds in SC-1 pre-gate clean solution; urea, NMP (N-Methyl-2-pyrrolidone) and phosphoric acid contamination in UPW; and plasticizer and an organic sulfur-containing compound found in isopropyl alcohol (IPA). It is expected that these unique analytical and metrology capabilities will improve the understanding of the effect of organic and molecular contamination on device performance and yield. This will permit the development of quantitative correlations between contamination levels and process degradation. It is also expected that the ability to perform routine process chemistry metrology will lead to corresponding improvements in manufacturing process control and yield, the ability to avoid excursions and will improve the overall cost effectiveness of the semiconductor manufacturing process.

Manipulating semiconductor colloidal stability through doping.

PubMed

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2014-10-10

The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

Semiconductor Laser Low Frequency Noise Characterization

NASA Technical Reports Server (NTRS)

Maleki, Lute; Logan, Ronald T.

1996-01-01

This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

Turbine-Driven Pipe-Cleaning Brush

NASA Technical Reports Server (NTRS)

Werlink, Rudy J.; Rowell, David E.

1994-01-01

Simple pipe-cleaning device includes small turbine wheel axially connected, by standoff, to circular brush. Turbine wheel turns on hub bearing attached to end of upstream cable. Turbine-and-brush assembly inserted in pipe with cable trailing upstream and brush facing downstream. Water or cleaning solution pumped through pipe. Cable held at upstream end, so it holds turbine and brush in pipe at location to be cleaned. Flow in pipe turns turbine, which turns wheel, producing desired cleaning action. In addition to brushing action, device provides even mixing of cleaning solution in pipe.

RM-CLEAN: RM spectra cleaner

NASA Astrophysics Data System (ADS)

Heald, George

2017-08-01

RM-CLEAN reads in dirty Q and U cubes, generates rmtf based on the frequencies given in an ASCII file, and cleans the RM spectra following the algorithm given by Brentjens (2007). The output cubes contain the clean model components and the CLEANed RM spectra. The input cubes must be reordered with mode=312, and the output cubes will have the same ordering and thus must be reordered after being written to disk. RM-CLEAN runs as a MIRIAD (ascl:1106.007) task and a Python wrapper is included with the code.

Edible packaging materials.

PubMed

Janjarasskul, Theeranun; Krochta, John M

2010-01-01

Research groups and the food and pharmaceutical industries recognize edible packaging as a useful alternative or addition to conventional packaging to reduce waste and to create novel applications for improving product stability, quality, safety, variety, and convenience for consumers. Recent studies have explored the ability of biopolymer-based food packaging materials to carry and control-release active compounds. As diverse edible packaging materials derived from various by-products or waste from food industry are being developed, the dry thermoplastic process is advancing rapidly as a feasible commercial edible packaging manufacturing process. The employment of nanocomposite concepts to edible packaging materials promises to improve barrier and mechanical properties and facilitate effective incorporation of bioactive ingredients and other designed functions. In addition to the need for a more fundamental understanding to enable design to desired specifications, edible packaging has to overcome challenges such as regulatory requirements, consumer acceptance, and scaling-up research concepts to commercial applications.

Semiconductor devices having a recessed electrode structure

DOEpatents

Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

2015-05-26

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

Diode having trenches in a semiconductor region

DOEpatents

Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

2016-03-22

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

Extending CO2 cryogenic aerosol cleaning for advanced optical and EUV mask cleaning

NASA Astrophysics Data System (ADS)

Varghese, Ivin; Bowers, Charles W.; Balooch, Mehdi

2011-11-01

Cryogenic CO2 aerosol cleaning being a dry, chemically-inert and residue-free process is used in the production of optical lithography masks. It is an attractive cleaning option for the mask industry to achieve the requirement for removal of all printable soft defects and repair debris down to the 50nm printability specification. In the technique, CO2 clusters are formed by sudden expansion of liquid from high to almost atmospheric pressure through an optimally designed nozzle orifice. They are then directed on to the soft defects or debris for momentum transfer and subsequent damage free removal from the mask substrate. Unlike aggressive acid based wet cleaning, there is no degradation of the mask after processing with CO2, i.e., no critical dimension (CD) change, no transmission/phase losses, or chemical residue that leads to haze formation. Therefore no restriction on number of cleaning cycles is required to be imposed, unlike other cleaning methods. CO2 aerosol cleaning has been implemented for several years as full mask final clean in production environments at several state of the art mask shops. Over the last two years our group reported successful removal of all soft defects without damage to the fragile SRAF features, zero adders (from the cleaning and handling mechanisms) down to a 50nm printability specification. In addition, CO2 aerosol cleaning is being utilized to remove debris from Post-RAVE repair of hard defects in order to achieve the goal of no printable defects. It is expected that CO2 aerosol cleaning can be extended to extreme ultraviolet (EUV) masks. In this paper, we report advances being made in nozzle design qualification for optimum snow properties (size, velocity and flux) using Phase Doppler Anemometry (PDA) technique. In addition the two new areas of focus for CO2 aerosol cleaning i.e. pellicle glue residue removal on optical masks, and ruthenium (Ru) film on EUV masks are presented. Usually, the residue left over after the pellicle

Space Research Results Purify Semiconductor Materials

NASA Technical Reports Server (NTRS)

2010-01-01

While President Obama's news that NASA would encourage private companies to develop vehicles to take NASA into space may have come as a surprise to some, NASA has always encouraged private companies to invest in space. More than two decades ago, NASA established Commercial Space Centers across the United States to encourage industry to use space as a place to conduct research and to apply NASA technology to Earth applications. Although the centers are no longer funded by NASA, the advances enabled by that previous funding are still impacting us all today. For example, the Space Vacuum Epitaxy Center (SVEC) at the University of Houston, one of the 17 Commercial Space Centers, had a mission to create advanced thin film semiconductor materials and devices through the use of vacuum growth technologies both on Earth and in space. Making thin film materials in a vacuum (low-pressure environment) is advantageous over making them in normal atmospheric pressures, because contamination floating in the air is lessened in a vacuum. To grow semiconductor crystals, researchers at SVEC utilized epitaxy the process of depositing a thin layer of material on top of another thin layer of material. On Earth, this process took place in a vacuum chamber in a clean room lab. For space, the researchers developed something called the Wake Shield Facility (WSF), a 12-foot-diameter disk-shaped platform designed to grow thin film materials using the low-pressure environment in the wake of the space shuttle. Behind an orbiting space shuttle, the vacuum levels are thousands of times better than in the best vacuum chambers on Earth. Throughout the 1990s, the WSF flew on three space shuttle missions as a series of proof-of-concept missions. These experiments are a lasting testament to the success of the shuttle program and resulted in the development of the first thin film materials made in the vacuum of space, helping to pave the way for better thin film development on Earth.

Electron transport in high aspect ratio semiconductor nanowires and metal-semiconductor interfaces

NASA Astrophysics Data System (ADS)

Sun, Zhuting

We are facing variability problems for modern semiconductor transistors due to the fact that the performances of nominally identical devices in the scale of 10 100 nm could be dramatically different attributed to the small manufacturing variations. Different doping strategies give statistical variations in the number of dopant atom density ND in the channel. The material size gives variations in wire diameter dW. And the immediate environment of the material leads to an additional level of variability. E.g. vacuum-semiconductor interface causes variations in surface state density Ds, metal-semiconductor interface causes variations in Schottky barrier and dielectric semiconductor interface induces dielectric confinement at small scales. To approach these variability problems, I choose Si-doped GaAs nanowires as an example. I investigate transport in Si-doped GaAs nanowire (NW) samples contacted by lithographically patterned Gold-Titanium films as function of temperature T. I find a drastically different temperature dependence between the wire resistance RW, which is relatively weak, and the zero bias resistance RC, which is strong. I show that the data are consistent with a model based on a sharp donor energy level slightly above the bottom of the semiconductor conduction band and develop a simple method for using transport measurements for estimates of the doping density after nanowire growth. I discuss the predictions of effective free carrier density n eff as function of the surface state density Ds and wire size dW. I also describe a correction to the widely used model of Schottky contacts that improves thermodynamic consistency of the Schottky tunnel barrier profile and show that the original theory may underestimate the barrier conductance under certain conditions. I also provide analytical calculations for shallow silicon dopant energy in GaAs crystals, and find the presence of dielectrics (dielectric screening) and free carriers (Coulomb screening) cause a

Solid-state semiconductor optical cryocooler based on CdS nanobelts.

PubMed

Li, Dehui; Zhang, Jun; Wang, Xinjiang; Huang, Baoling; Xiong, Qihua

2014-08-13

We demonstrate the laser cooling of silicon-on-insulator (SOI) substrate using CdS nanobelts. The local temperature change of the SOI substrate exactly beneath the CdS nanobelts is deduced from the ratio of the Stokes and anti-Stokes Raman intensities from the Si layer on the top of the SOI substrate. We have achieved a 30 and 20 K net cooling starting from 290 K under a 3.8 mW 514 nm and a 4.4 mW 532 nm pumping, respectively. In contrast, a laser heating effect has been observed pumped by 502 and 488 nm lasers. Theoretical analysis based on the general static heat conduction module in the Ansys program package is conducted, which agrees well with the experimental results. Our investigations demonstrate the laser cooling capability of an external thermal load, suggesting the applications of II-VI semiconductors in all-solid-state optical cryocoolers.

Electron gas grid semiconductor radiation detectors

DOEpatents

Lee, Edwin Y.; James, Ralph B.

2002-01-01

An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

Wafer-level micro-optics: trends in manufacturing, testing, packaging, and applications

NASA Astrophysics Data System (ADS)

Voelkel, Reinhard; Gong, Li; Rieck, Juergen; Zheng, Alan

2012-11-01

Micro-optics is an indispensable key enabling technology (KET) for many products and applications today. Probably the most prestigious examples are the diffractive light shaping elements used in high-end DUV lithography steppers. Highly efficient refractive and diffractive micro-optical elements are used for precise beam and pupil shaping. Micro-optics had a major impact on the reduction of aberrations and diffraction effects in projection lithography, allowing a resolution enhancement from 250 nm to 45 nm within the last decade. Micro-optics also plays a decisive role in medical devices (endoscopes, ophthalmology), in all laser-based devices and fiber communication networks (supercomputer, ROADM), bringing high-speed internet to our homes (FTTH). Even our modern smart phones contain a variety of micro-optical elements. For example, LED flashlight shaping elements, the secondary camera, and ambient light and proximity sensors. Wherever light is involved, micro-optics offers the chance to further miniaturize a device, to improve its performance, or to reduce manufacturing and packaging costs. Wafer-scale micro-optics fabrication is based on technology established by semiconductor industry. Thousands of components are fabricated in parallel on a wafer. We report on the state of the art in wafer-based manufacturing, testing, packaging and present examples and applications for micro-optical components and systems.

Cleaning without chlorinated solvents

NASA Technical Reports Server (NTRS)

Thompson, L. M.; Simandl, R. F.

1995-01-01

Because of health and environmental concerns, many regulations have been passed in recent years regarding the use of chlorinated solvents. The Oak Ridge Y-12 Plant has had an active program to find alternatives for these solvents used in cleaning applications for the past 7 years. During this time frame, the quantity of solvents purchased has been reduced by 92 percent. The program has been a twofold effort. Vapor degreasers used in batch cleaning operations have been replaced by ultrasonic cleaning with aqueous detergent, and other organic solvents have been identified for use in hand-wiping or specialty operations. In order to qualify these alternatives for use, experimentation was conducted on cleaning ability as well as effects on subsequent operations such as welding, painting, and bonding. Cleaning ability was determined using techniques such as x-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) which are capable of examining monolayer levels of contamination on a surface. Solvents have been identified for removal of rust preventative oils, lapping oils, machining coolants, lubricants, greases, and mold releases. Solvents have also been evaluated for cleaning urethane foam spray guns, swelling of urethanes, and swelling of epoxies.

Semiconductor assisted metal deposition for nanolithography applications

DOEpatents

Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

2001-01-01

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Semiconductor assisted metal deposition for nanolithography applications

DOEpatents

Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

2002-01-01

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Packaged die heater

DOEpatents

Spielberger, Richard; Ohme, Bruce Walker; Jensen, Ronald J.

2011-06-21

A heater for heating packaged die for burn-in and heat testing is described. The heater may be a ceramic-type heater with a metal filament. The heater may be incorporated into the integrated circuit package as an additional ceramic layer of the package, or may be an external heater placed in contact with the package to heat the die. Many different types of integrated circuit packages may be accommodated. The method provides increased energy efficiency for heating the die while reducing temperature stresses on testing equipment. The method allows the use of multiple heaters to heat die to different temperatures. Faulty die may be heated to weaken die attach material to facilitate removal of the die. The heater filament or a separate temperature thermistor located in the package may be used to accurately measure die temperature.

77 FR 44672 - Notice of Lodging of Consent Decree Under the Clean Water and Clean Air Acts

Federal Register 2010, 2011, 2012, 2013, 2014

2012-07-30

... DEPARTMENT OF JUSTICE Notice of Lodging of Consent Decree Under the Clean Water and Clean Air Acts... a civil penalty of $1,750,000 to resolve its violations of the Clean Air Act and the Clean Water Act... of coke oven gas. Under the Clean Water Act, Plaintiffs allege that Shenango violated the effluent...

How clean is your clean room?

PubMed

Govier, J

2006-01-01

After investment in a clean room, cleanliness, sanitisation or sterility is essential to ensuring it operates at the highest standard. This article advises on the products and maintenance procedures to achieve this.

EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

NASA Astrophysics Data System (ADS)

Calvez, S.; Adams, M. J.

2012-09-01

Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

EDITORIAL: The 24th Nordic Semiconductor Meeting The 24th Nordic Semiconductor Meeting

NASA Astrophysics Data System (ADS)

Páll Gunnlaugsson, Haraldur; Nylandsted Larsen, Arne; Uhrenfeldt, Christian

2012-03-01

A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a Topical Issue of Physica Scripta. All of the papers in this Topical Issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This 24th meeting of the Nordic Semiconductor community, NSM 2011, was held at Fuglsøcentret, close to Aarhus, Denmark, 19-22 June 2011. Support was provided by the Carlsberg Foundation, Danfysik and the semiconductor group at Aarhus University. Over 30 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The aim of the meeting was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. The 25th Nordic Semiconductor Meeting will be organized in June 2013 in Finland, chaired by Dr Filip Tuomisto, Aalto University. A Nordic Summer School on Semiconductor Science will be organized in connection with the conference (just before), chaired by Dr Jonatan Slotte, Aalto University. Information on these events can be found at physics.aalto.fi/nsm2013. List of participants Søren Vejling

Cleaning with Bulk Nanobubbles.

PubMed

Zhu, Jie; An, Hongjie; Alheshibri, Muidh; Liu, Lvdan; Terpstra, Paul M J; Liu, Guangming; Craig, Vincent S J

2016-11-01

The electrolysis of aqueous solutions produces solutions that are supersaturated in oxygen and hydrogen gas. This results in the formation of gas bubbles, including nanobubbles ∼100 nm in size that are stable for ∼24 h. These aqueous solutions containing bubbles have been evaluated for cleaning efficacy in the removal of model contaminants bovine serum albumin and lysozyme from surfaces and in the prevention of the fouling of surfaces by these same proteins. Hydrophilic and hydrophobic surfaces were investigated. It is shown that nanobubbles can prevent the fouling of surfaces and that they can also clean already fouled surfaces. It is also argued that in practical applications where cleaning is carried out rapidly using a high degree of mechanical agitation the role of cleaning agents is not primarily in assisting the removal of soil but in suspending the soil that is removed by mechanical action and preventing it from redepositing onto surfaces. This may also be the primary mode of action of nanobubbles during cleaning.

Gas cleaning system and method

DOEpatents

Newby, Richard Allen

2006-06-06

A gas cleaning system for removing at least a portion of contaminants, such as halides, sulfur, particulates, mercury, and others, from a synthesis gas (syngas). The gas cleaning system may include one or more filter vessels coupled in series for removing halides, particulates, and sulfur from the syngas. The gas cleaning system may be operated by receiving gas at a first temperature and pressure and dropping the temperature of the syngas as the gas flows through the system. The gas cleaning system may be used for an application requiring clean syngas, such as, but not limited to, fuel cell power generation, IGCC power generation, and chemical synthesis.

Benchmarks of Global Clean Energy Manufacturing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sandor, Debra; Chung, Donald; Keyser, David

The Clean Energy Manufacturing Analysis Center (CEMAC), sponsored by the U.S. Department of Energy (DOE) Office of Energy Efficiency and Renewable Energy (EERE), provides objective analysis and up-to-date data on global supply chains and manufacturing of clean energy technologies. Benchmarks of Global Clean Energy Manufacturing sheds light on several fundamental questions about the global clean technology manufacturing enterprise: How does clean energy technology manufacturing impact national economies? What are the economic opportunities across the manufacturing supply chain? What are the global dynamics of clean energy technology manufacturing?

46 CFR 183.360 - Semiconductor rectifier systems.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 7 2011-10-01 2011-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

46 CFR 183.360 - Semiconductor rectifier systems.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

ENHANCED CHEMICAL CLEANING: A NEW PROCESS FOR CHEMICALLY CLEANING SAVANNAH RIVER WASTE TANKS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ketusky, E; Neil Davis, N; Renee Spires, R

2008-01-17

The Savannah River Site (SRS) has 49 high level waste (HLW) tanks that must be emptied, cleaned, and closed as required by the Federal Facilities Agreement. The current method of chemical cleaning uses several hundred thousand gallons per tank of 8 weight percent (wt%) oxalic acid to partially dissolve and suspend residual waste and corrosion products such that the waste can be pumped out of the tank. This adds a significant quantity of sodium oxalate to the tanks and, if multiple tanks are cleaned, renders the waste incompatible with the downstream processing. Tank space is also insufficient to store thismore » stream given the large number of tanks to be cleaned. Therefore, a search for a new cleaning process was initiated utilizing the TRIZ literature search approach, and Chemical Oxidation Reduction Decontamination--Ultraviolet (CORD-UV), a mature technology currently used for decontamination and cleaning of commercial nuclear reactor primary cooling water loops, was identified. CORD-UV utilizes oxalic acid for sludge dissolution, but then decomposes the oxalic acid to carbon dioxide and water by UV treatment outside the system being treated. This allows reprecipitation and subsequent deposition of the sludge into a selected container without adding significant volume to that container, and without adding any new chemicals that would impact downstream treatment processes. Bench top and demonstration loop measurements on SRS tank sludge stimulant demonstrated the feasibility of applying CORD-UV for enhanced chemical cleaning of SRS HLW tanks.« less

49 CFR 173.24a - Additional general requirements for non-bulk packagings and packages.

Code of Federal Regulations, 2010 CFR

2010-10-01

... subchapter. (b) Non-bulk packaging filling limits. (1) A single or composite non-bulk packaging may be filled... gross mass marked on the packaging. (3) A single or composite non-bulk packaging which is tested and... marked on the packaging, or 1.2 if not marked. In addition: (i) A single or composite non-bulk packaging...

49 CFR 173.24a - Additional general requirements for non-bulk packagings and packages.

Code of Federal Regulations, 2012 CFR

2012-10-01

... subchapter. (b) Non-bulk packaging filling limits. (1) A single or composite non-bulk packaging may be filled... gross mass marked on the packaging. (3) A single or composite non-bulk packaging which is tested and... marked on the packaging, or 1.2 if not marked. In addition: (i) A single or composite non-bulk packaging...

49 CFR 173.24a - Additional general requirements for non-bulk packagings and packages.

Code of Federal Regulations, 2013 CFR

2013-10-01

... subchapter. (b) Non-bulk packaging filling limits. (1) A single or composite non-bulk packaging may be filled... gross mass marked on the packaging. (3) A single or composite non-bulk packaging which is tested and... marked on the packaging, or 1.2 if not marked. In addition: (i) A single or composite non-bulk packaging...

Room-temperature semiconductor heterostructure refrigeration

NASA Astrophysics Data System (ADS)

Chao, K. A.; Larsson, Magnus; Mal'shukov, A. G.

2005-07-01

With the proper design of semiconductor tunneling barrier structures, we can inject low-energy electrons via resonant tunneling, and take out high-energy electrons via a thermionic process. This is the operation principle of our semiconductor heterostructure refrigerator (SHR) without the need of applying a temperature gradient across the device. Even for the bad thermoelectric material AlGaAs, our calculation shows that at room temperature, the SHR can easily lower the temperature by 5-7K. Such devices can be fabricated with the present semiconductor technology. Besides its use as a kitchen refrigerator, the SHR can efficiently cool microelectronic devices.

46 CFR 129.360 - Semiconductor-rectifier systems.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

46 CFR 120.360 - Semiconductor rectifier systems.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

46 CFR 129.360 - Semiconductor-rectifier systems.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

46 CFR 120.360 - Semiconductor rectifier systems.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

GENERAL PURPOSE ADA PACKAGES

NASA Technical Reports Server (NTRS)

Klumpp, A. R.

1994-01-01

Ten families of subprograms are bundled together for the General-Purpose Ada Packages. The families bring to Ada many features from HAL/S, PL/I, FORTRAN, and other languages. These families are: string subprograms (INDEX, TRIM, LOAD, etc.); scalar subprograms (MAX, MIN, REM, etc.); array subprograms (MAX, MIN, PROD, SUM, GET, and PUT); numerical subprograms (EXP, CUBIC, etc.); service subprograms (DATE_TIME function, etc.); Linear Algebra II; Runge-Kutta integrators; and three text I/O families of packages. In two cases, a family consists of a single non-generic package. In all other cases, a family comprises a generic package and its instances for a selected group of scalar types. All generic packages are designed to be easily instantiated for the types declared in the user facility. The linear algebra package is LINRAG2. This package includes subprograms supplementing those in NPO-17985, An Ada Linear Algebra Package Modeled After HAL/S (LINRAG). Please note that LINRAG2 cannot be compiled without LINRAG. Most packages have widespread applicability, although some are oriented for avionics applications. All are designed to facilitate writing new software in Ada. Several of the packages use conventions introduced by other programming languages. A package of string subprograms is based on HAL/S (a language designed for the avionics software in the Space Shuttle) and PL/I. Packages of scalar and array subprograms are taken from HAL/S or generalized current Ada subprograms. A package of Runge-Kutta integrators is patterned after a built-in MAC (MIT Algebraic Compiler) integrator. Those packages modeled after HAL/S make it easy to translate existing HAL/S software to Ada. The General-Purpose Ada Packages program source code is available on two 360K 5.25" MS-DOS format diskettes. The software was developed using VAX Ada v1.5 under DEC VMS v4.5. It should be portable to any validated Ada compiler and it should execute either interactively or in batch. The largest package

Mesoscopic spin Hall effect in semiconductor nanostructures

NASA Astrophysics Data System (ADS)

Zarbo, Liviu

The spin Hall effect (SHE) is a name given to a collection of diverse phenomena which share two principal features: (i) longitudinal electric current flowing through a paramagnetic semiconductor or metallic sample leads to transverse spin current and spin accumulation of opposite sign at opposing lateral edges; (ii) SHE does not require externally applied magnetic field or magnetic ordering in the equilibrium state of the sample, instead it relies on the presence of spin-orbit (SO) couplings within the sample. This thesis elaborates on a new type of phenomenon within the SHE family, predicted in our recent studies [Phys. Rev. B 72, 075361 (2005); Phys. Rev. Lett. 95, 046601 (2005); Phys. Rev. B 72, 075335 (2005); Phys. Rev. B 73 , 075303 (2006); and Europhys. Lett. 77, 47004 (2007)], where pure spin current flows through the transverse electrodes attached to a clean finitesize two-dimensional electron gas (2DEG) due to unpolarized charge current injected through its longitudinal leads. If transverse leads are removed, the effect manifests as nonequilibrium spin Hall accumulation at the lateral edges of 2DEG wires. The SO coupling driving this SHE effect is of the Rashba type, which arises due to structural inversion asymmetry of semiconductor heterostructure hosting the 2DEG. We term the effect "mesoscopic" because the spin Hall currents and accumulations reach optimal value in samples of the size of the spin precession length---the distance over which the spin of an electron precesses by an angle pi. In strongly SO-coupled structures this scale is of the order of ˜100 nm, and, therefore, mesoscopic in the sense of being much larger than the characteristic microscopic scales (such as the Fermi wavelength, screening length, or the mean free path in disordered systems), but still much smaller than the macroscopic ones. Although the first theoretical proposal for SHE, driven by asymmetry in SO-dependent scattering of spin-up and spin-down electrons off impurities

Ultrasonic cleaning: Fundamental theory and application

NASA Technical Reports Server (NTRS)

Fuchs, F. John

1995-01-01

This presentation describes: the theory of ultrasonics, cavitation and implosion; the importance and application of ultrasonics in precision cleaning; explanations of ultrasonic cleaning equipment options and their application; process parameters for ultrasonic cleaning; and proper operation of ultrasonic cleaning equipment to achieve maximum results.

Bi-Se doped with Cu, p-type semiconductor

DOEpatents

Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

2013-08-20

A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

Detecting small holes in packages

DOEpatents

Kronberg, James W.; Cadieux, James R.

1996-01-01

A package containing a tracer gas, and a method for determining the presence of a hole in the package by sensing the presence of the gas outside the package. The preferred tracer gas, especially for food packaging, is sulfur hexafluoride. A quantity of the gas is added to the package and the package is closed. The concentration of the gas in the atmosphere outside the package is measured and compared to a predetermined value of the concentration of the gas in the absence of the package. A measured concentration greater than the predetermined value indicates the presence of a hole in the package. Measuring may be done in a chamber having a lower pressure than that in the package.

Method of producing strained-layer semiconductor devices via subsurface-patterning

DOEpatents

Dodson, Brian W.

1993-01-01

A method is described for patterning subsurface features in a semiconductor device, wherein the semiconductor device includes an internal strained layer. The method comprises creating a pattern of semiconductor material over the semiconductor device, the semiconductor material having a predetermined thickness which stabilizes areas of the strained semiconductor layer that lie beneath the pattern. Subsequently, a heating step is applied to the semiconductor device to cause a relaxation in areas of the strained layer which do not lie beneath the semiconductor material pattern, whereby dislocations result in the relaxed areas and impair electrical transport therethrough.

Epitaxy of semiconductor-superconductor nanowires

NASA Astrophysics Data System (ADS)

Krogstrup, P.; Ziino, N. L. B.; Chang, W.; Albrecht, S. M.; Madsen, M. H.; Johnson, E.; Nygård, J.; Marcus, C. M.; Jespersen, T. S.

2015-04-01

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and seems to solve the soft-gap problem in superconducting hybrid structures.

Electron beam pumped semiconductor laser

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

Changes in electrical and thermal parameters of led packages under different current and heating stresses

NASA Astrophysics Data System (ADS)

Jayawardena, Adikaramge Asiri

The goal of this dissertation is to identify electrical and thermal parameters of an LED package that can be used to predict catastrophic failure real-time in an application. Through an experimental study the series electrical resistance and thermal resistance were identified as good indicators of contact failure of LED packages. This study investigated the long-term changes in series electrical resistance and thermal resistance of LED packages at three different current and junction temperature stress conditions. Experiment results showed that the series electrical resistance went through four phases of change; including periods of latency, rapid increase, saturation, and finally a sharp decline just before failure. Formation of voids in the contact metallization was identified as the underlying mechanism for series resistance increase. The rate of series resistance change was linked to void growth using the theory of electromigration. The rate of increase of series resistance is dependent on temperature and current density. The results indicate that void growth occurred in the cap (Au) layer, was constrained by the contact metal (Ni) layer, preventing open circuit failure of contact metal layer. Short circuit failure occurred due to electromigration induced metal diffusion along dislocations in GaN. The increase in ideality factor, and reverse leakage current with time provided further evidence to presence of metal in the semiconductor. An empirical model was derived for estimation of LED package failure time due to metal diffusion. The model is based on the experimental results and theories of electromigration and diffusion. Furthermore, the experimental results showed that the thermal resistance of LED packages increased with aging time. A relationship between thermal resistance change rate, with case temperature and temperature gradient within the LED package was developed. The results showed that dislocation creep is responsible for creep induced plastic

Controlling the stoichiometry and doping of semiconductor materials

DOEpatents

Albin, David; Burst, James; Metzger, Wyatt; Duenow, Joel; Farrell, Stuart; Colegrove, Eric

2016-08-16

Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.

PICSiP: new system-in-package technology using a high bandwidth photonic interconnection layer for converged microsystems

NASA Astrophysics Data System (ADS)

Tekin, Tolga; Töpper, Michael; Reichl, Herbert

2009-05-01

Technological frontiers between semiconductor technology, packaging, and system design are disappearing. Scaling down geometries [1] alone does not provide improvement of performance, less power, smaller size, and lower cost. It will require "More than Moore" [2] through the tighter integration of system level components at the package level. System-in-Package (SiP) will deliver the efficient use of three dimensions (3D) through innovation in packaging and interconnect technology. A key bottleneck to the implementation of high-performance microelectronic systems, including SiP, is the lack of lowlatency, high-bandwidth, and high density off-chip interconnects. Some of the challenges in achieving high-bandwidth chip-to-chip communication using electrical interconnects include the high losses in the substrate dielectric, reflections and impedance discontinuities, and susceptibility to crosstalk [3]. Obviously, the incentive for the use of photonics to overcome the challenges and leverage low-latency and highbandwidth communication will enable the vision of optical computing within next generation architectures. Supercomputers of today offer sustained performance of more than petaflops, which can be increased by utilizing optical interconnects. Next generation computing architectures are needed with ultra low power consumption; ultra high performance with novel interconnection technologies. In this paper we will discuss a CMOS compatible underlying technology to enable next generation optical computing architectures. By introducing a new optical layer within the 3D SiP, the development of converged microsystems, deployment for next generation optical computing architecture will be leveraged.

Packaging and Transportation Support at LANL CTMA 2012

DOE Office of Scientific and Technical Information (OSTI.GOV)

Salazar, Nick

2012-06-08

Operations Support Packaging and Transportation (OS-PT) supports LANL in various functions. Some highlights of the past year have been with the work relating to environmental remediation, type B packaging, non-DOT compliant transfers, and special permit training. The TA-21 remediation project was part of the ARRA funding that LANL received. The $212 million in funding was used to demolish 24 buildings at TA-21, excavate the lab's oldest waste disposal site, and install 16 groundwater monitoring wells. The project was completed ahead of schedule and under budget. More than 300 tons of metal was recycled and all the soil excavated from MDA-Bmore » was replaced with clean fill. OS-PT supported this projected by transporting more than 7 million pounds of waste to TA-54 Area G with an addendum to their TSD. Because of the public access on the transfer route, Los Alamos County restricted the transfer to happen from 2:00 AM to 4:00 AM. OS-PT conducted 8 transfers in support of this project. Some concerns included the contaminated trailers at receipt facilities when transferring filled Super Sacks. Future Super Sacks were over packed into new IP-2 Super Sacks before shipping. OS-PT is also supporting the remediation of TA-54 Area G. LANL has an agreement with the State of New Mexico to remove all TRU waste currently stored above ground from at Area G. OS-PT supports this initiative with transfers of TRU waste under LANL's TSD and support of TRU shipments to WIPP. Another project supported by our organization is gas cylinder/dewar recycling and remediation. We are focusing on reducing risk associated with unneeded gasses at LANL. To minimized excessive ordering, to save money and time, and to minimize hazards OS-PT is supporting a gas recycling program. This program will allow programmatic organization across LANL to share unused/unneeded gasses. Instead of old dewars being disposed of, OS-PT has began identifying these dewars and sending them for refurbishment. To date

Packaging for Food Service

NASA Technical Reports Server (NTRS)

Stilwell, E. J.

1985-01-01

Most of the key areas of concern in packaging the three principle food forms for the space station were covered. It can be generally concluded that there are no significant voids in packaging materials availability or in current packaging technology. However, it must also be concluded that the process by which packaging decisions are made for the space station feeding program will be very synergistic. Packaging selection will depend heavily on the preparation mechanics, the preferred presentation and the achievable disposal systems. It will be important that packaging be considered as an integral part of each decision as these systems are developed.

Reflection technique for thermal mapping of semiconductors

DOEpatents

Walter, Martin J.

1989-06-20

Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

Multinary I-III-VI2 and I2-II-IV-VI4 Semiconductor Nanostructures for Photocatalytic Applications.

PubMed

Regulacio, Michelle D; Han, Ming-Yong

2016-03-15

Semiconductor nanostructures that can effectively serve as light-responsive photocatalysts have been of considerable interest over the past decade. This is because their use in light-induced photocatalysis can potentially address some of the most serious environmental and energy-related concerns facing the world today. One important application is photocatalytic hydrogen production from water under solar radiation. It is regarded as a clean and sustainable approach to hydrogen fuel generation because it makes use of renewable resources (i.e., sunlight and water), does not involve fossil fuel consumption, and does not result in environmental pollution or greenhouse gas emission. Another notable application is the photocatalytic degradation of nonbiodegradable dyes, which offers an effective way of ridding industrial wastewater of toxic organic pollutants prior to its release into the environment. Metal oxide semiconductors (e.g., TiO2) are the most widely studied class of semiconductor photocatalysts. Their nanostructured forms have been reported to efficiently generate hydrogen from water and effectively degrade organic dyes under ultraviolet-light irradiation. However, the wide band gap characteristic of most metal oxides precludes absorption of light in the visible region, which makes up a considerable portion of the solar radiation spectrum. Meanwhile, nanostructures of cadmium chalcogenide semiconductors (e.g., CdS), with their relatively narrow band gap that can be easily adjusted through size control and alloying, have displayed immense potential as visible-light-responsive photocatalysts, but the intrinsic toxicity of cadmium poses potential risks to human health and the environment. In developing new nanostructured semiconductors for light-driven photocatalysis, it is important to choose a semiconducting material that has a high absorption coefficient over a wide spectral range and is safe for use in real-world settings. Among the most promising candidates

Detecting small holes in packages

DOEpatents

Kronberg, J.W.; Cadieux, J.R.

1996-03-19

A package containing a tracer gas, and a method for determining the presence of a hole in the package by sensing the presence of the gas outside the package are disclosed. The preferred tracer gas, especially for food packaging, is sulfur hexafluoride. A quantity of the gas is added to the package and the package is closed. The concentration of the gas in the atmosphere outside the package is measured and compared to a predetermined value of the concentration of the gas in the absence of the package. A measured concentration greater than the predetermined value indicates the presence of a hole in the package. Measuring may be done in a chamber having a lower pressure than that in the package. 3 figs.

True Cost of Amateur Clean rooms

NASA Technical Reports Server (NTRS)

Ramsey, W. Lawrence

2005-01-01

This viewgraph document reviews the cost factors for clean rooms that are not professionally built, monitored or maintained. These amateur clean rooms are built because scientist and engineers desire to create a clean room to build a part of an experiment that requires a clean room, and the program manager is looking to save money. However, in the long run these clean rooms may not save money, as the cost of maintenance may be higher due to the cost of transporting the crews, and if the materials were of lesser quality, the cost of modifications may diminish any savings, and the product may not be of the same quality. Several examples are shown of the clean rooms that show some of the problems that can arise from amateur clean rooms.

Clean Watersheds Needs Survey

EPA Pesticide Factsheets

The Clean Watershed Needs Survey is a national assessment of the future capital cost for publicly owned wastewater collection and treatment facilities to meet the Clean Water Act's water quality goals.

Narrow band gap amorphous silicon semiconductors

DOEpatents

Madan, A.; Mahan, A.H.

1985-01-10

Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

Photoresist removal using gaseous sulfur trioxide cleaning technology

NASA Astrophysics Data System (ADS)

Del Puppo, Helene; Bocian, Paul B.; Waleh, Ahmad

1999-06-01

A novel cleaning method for removing photoresists and organic polymers from semiconductor wafers is described. This non-plasma method uses anhydrous sulfur trioxide gas in a two-step process, during which, the substrate is first exposed to SO3 vapor at relatively low temperatures and then is rinsed with de-ionized water. The process is radically different from conventional plasma-ashing methods in that the photoresist is not etched or removed during the exposure to SO3. Rather, the removal of the modified photoresist takes place during the subsequent DI-water rinse step. The SO3 process completely removes photoresist and polymer residues in many post-etch applications. Additional advantages of the process are absence of halogen gases and elimination of the need for other solvents and wet chemicals. The process also enjoys a very low cost of ownership and has minimal environmental impact. The SEM and SIMS surface analysis results are presented to show the effectiveness of gaseous SO3 process after polysilicon, metal an oxide etch applications. The effects of both chlorine- and fluorine-based plasma chemistries on resist removal are described.

CURE: Clean use of reactor energy

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1990-05-01

This paper presents the results of a joint Westinghouse Hanford Company (Westinghouse Hanford)-Pacific Northwest Laboratory (PNL) study that considered the feasibility of treating radioactive waste before disposal to reduce the inventory of long-lived radionuclides, making the waste more suitable for geologic disposal. The treatment considered here is one in which waste would be chemically separated so that long-lived radionuclides can be treated using specific processes appropriate for the nuclide. The technical feasibility of enhancing repository performance by this type of treatment is considered in this report. A joint Westinghouse Hanford-PNL study group developed a concept called the Clean Use ofmore » Reactor Energy (CURE), and evaluated the potential of current technology to reduce the long-lived radionuclide content in waste from the nuclear power industry. The CURE process consists of three components: chemical separation of elements that have significant quantities of long-lived radioisotopes in the waste, exposure in a neutron flux to transmute the radioisotopes to stable nuclides, and packaging of radionuclides that cannot be transmuted easily for storage or geologic disposal. 76 refs., 32 figs., 24 tabs.« less

Semiconductor switch geometry with electric field shaping

DOEpatents

Booth, R.; Pocha, M.D.

1994-08-23

An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

Semiconductor switch geometry with electric field shaping

DOEpatents

Booth, Rex; Pocha, Michael D.

1994-01-01

An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

Plasma Properties of an Exploding Semiconductor Igniter

NASA Astrophysics Data System (ADS)

McGuirk, J. S.; Thomas, K. A.; Shaffer, E.; Malone, A. L.; Baginski, T.; Baginski, M. E.

1997-11-01

Requirements by the automotive industry for low-cost, pyrotechnic igniters for automotive airbags have led to the development of several semiconductor devices. The properties of the plasma produced by the vaporization of an exploding semiconductor are necessary in order to minimize the electrical energy requirements. This work considers two silicon-based semiconductor devices: the semiconductor bridge (SCB) and the semiconductor junction igniter both consisting of etched silicon with vapor deposited aluminum structures. Electrical current passing through the device heats a narrow junction region to the point of vaporization creating an aluminum and silicon low-temperature plasma. This work will investigate the electrical characteristics of both devices and infer the plasma properties. Furthermore optical spectral measurements will be taken of the exploding devices to estimate the temperature and density of the plasma.

Semiconductor Lasers and Their Application in Optical Fiber Communication.

ERIC Educational Resources Information Center

Agrawal, Govind P.

1985-01-01

Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

Cleaning Processes across NASA Centers

NASA Technical Reports Server (NTRS)

Hammond, John M.

2010-01-01

All significant surfaces of the hardware must be pre-cleaned to remove dirt, grit, scale, corrosion, grease, oil and other foreign matter prior to any final precision cleaning process. Metallic parts shall be surface treated (cleaned, passivated, pickled and/or coated) as necessary to prevent latent corrosion and contamination.

Anhydrous Ammonia Training Module. Trainer's Package. Participant's Package.

ERIC Educational Resources Information Center

Beaudin, Bart; And Others

This document contains a trainer's and a participant's package for teaching employees on site safe handling procedures for working with anhydrous ammonia, especially on farms. The trainer's package includes the following: a description of the module; a competency; objectives; suggested instructional aids; a training outline (or lesson plan) for…

Hot electron dynamics at semiconductor surfaces: Implications for quantum dot photovoltaics

NASA Astrophysics Data System (ADS)

Tisdale, William A., III

Finding a viable supply of clean, renewable energy is one of the most daunting challenges facing the world today. Solar cells have had limited impact in meeting this challenge because of their high cost and low power conversion efficiencies. Semiconductor nanocrystals, or quantum dots, are promising materials for use in novel solar cells because they can be processed with potentially inexpensive solution-based techniques and because they are predicted to have novel optoelectronic properties that could enable the realization of ultra-efficient solar power converters. However, there is a lack of fundamental understanding regarding the behavior of highly-excited, or "hot," charge carriers near quantum-dot and semiconductor interfaces, which is of paramount importance to the rational design of high-efficiency devices. The elucidation of these ultrafast hot electron dynamics is the central aim of this Dissertation. I present a theoretical framework for treating the electronic interactions between quantum dots and bulk semiconductor surfaces and propose a novel experimental technique, time-resolved surface second harmonic generation (TR-SHG), for probing these interactions. I then describe a series of experimental investigations into hot electron dynamics in specific quantum-dot/semiconductor systems. A two-photon photoelectron spectroscopy (2PPE) study of the technologically-relevant ZnO(1010) surface reveals ultrafast (sub-30fs) cooling of hot electrons in the bulk conduction band, which is due to strong electron-phonon coupling in this highly polar material. The presence of a continuum of defect states near the conduction band edge results in Fermi-level pinning and upward (n-type) band-bending at the (1010) surface and provides an alternate route for electronic relaxation. In monolayer films of colloidal PbSe quantum dots, chemical treatment with either hydrazine or 1,2-ethanedithiol results in strong and tunable electronic coupling between neighboring quantum dots

Human and Environmental Toxicity of Sodium Lauryl Sulfate (SLS): Evidence for Safe Use in Household Cleaning Products.

PubMed

Bondi, Cara Am; Marks, Julia L; Wroblewski, Lauren B; Raatikainen, Heidi S; Lenox, Shannon R; Gebhardt, Kay E

2015-01-01

Environmental chemical exposure is a major concern for consumers of packaged goods. The complexity of chemical nomenclature and wide availability of scientific research provide detailed information but lends itself to misinterpretation by the lay person. For the surfactant sodium lauryl sulfate (SLS), this has resulted in a misunderstanding of the environmental health impact of the chemical and statements in the media that are not scientifically supported. This review demonstrates how scientific works can be misinterpreted and used in a manner that was not intended by the authors, while simultaneously providing insight into the true environmental health impact of SLS. SLS is an anionic surfactant commonly used in consumer household cleaning products. For decades, this chemical has been developing a negative reputation with consumers because of inaccurate interpretations of the scientific literature and confusion between SLS and chemicals with similar names. Here, we review the human and environmental toxicity profiles of SLS and demonstrate that it is safe for use in consumer household cleaning products.

Human and Environmental Toxicity of Sodium Lauryl Sulfate (SLS): Evidence for Safe Use in Household Cleaning Products

PubMed Central

Bondi, Cara AM; Marks, Julia L; Wroblewski, Lauren B; Raatikainen, Heidi S; Lenox, Shannon R; Gebhardt, Kay E

2015-01-01

Environmental chemical exposure is a major concern for consumers of packaged goods. The complexity of chemical nomenclature and wide availability of scientific research provide detailed information but lends itself to misinterpretation by the lay person. For the surfactant sodium lauryl sulfate (SLS), this has resulted in a misunderstanding of the environmental health impact of the chemical and statements in the media that are not scientifically supported. This review demonstrates how scientific works can be misinterpreted and used in a manner that was not intended by the authors, while simultaneously providing insight into the true environmental health impact of SLS. SLS is an anionic surfactant commonly used in consumer household cleaning products. For decades, this chemical has been developing a negative reputation with consumers because of inaccurate interpretations of the scientific literature and confusion between SLS and chemicals with similar names. Here, we review the human and environmental toxicity profiles of SLS and demonstrate that it is safe for use in consumer household cleaning products. PMID:26617461

Assessing the impact of a school-based latrine cleaning and handwashing program on pupil absence in Nyanza Province, Kenya: a cluster-randomized trial.

PubMed

Caruso, Bethany A; Freeman, Matthew C; Garn, Joshua V; Dreibelbis, Robert; Saboori, Shadi; Muga, Richard; Rheingans, Richard

2014-10-01

Improving school water, sanitation and hygiene (WASH) conditions reduces pupil absence and illness. However, these benefits may depend on the conditions of the latrines and availability of consumables. We sought to determine whether a low-cost, policy-relevant, environmental-level latrine cleaning intervention could improve latrine cleanliness, increase its use and reduce absenteeism. In a three-arm, cluster-randomized trial we assessed absence via periodical roll-call among 17 564 pupils in 60 schools that had previously received WASH improvements as part of the SWASH+ project. Latrine conditions and use were also assessed using structured observation. Latrine cleanliness increased significantly during the post-intervention period among schools receiving the latrine cleaning package compared to controls, as did handwashing with soap. We found no difference in latrine use and absence across arms. The additive impact of cleaning may not have been strong enough to impact absence above and beyond reductions attributable to the original WASH infrastructure improvements and basic hygiene education the schools previously received. Improving latrine conditions is important for the dignity and well-being of pupils, and investments and strategies are necessary to ensure that school toilets are clean and pupil-friendly. © 2014 John Wiley & Sons Ltd.

How Do We Clean Our Water and How Clean Does It Need to Be?

ERIC Educational Resources Information Center

Whitburn, Niki

2013-01-01

Nowadays, in the United Kingdom, citizens take for granted clean water pumped directly into their homes, but it was not always the case, and is still not so in many countries. Could people clean water themselves if they had to and what could they then use it for? Would it actually be "clean enough" to drink? The author presents children…

Definitional-mission report: Clean-coal-technology assistance project in Poland (final report). Export trade information

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shrivastava, V.K.

1992-01-01

The new impending environmental law in Poland provides for strict environmental guidelines for coal preparation, washing, mine desalination, and application of commercially viable and economical clean coal technologies for utilization of coal. The government of Poland requested the U.S. Trade and Development Program (TDP) carry out a Definitional Mission to Poland to define the requirements of the Polish authorities and to prepare specific recommendations for follow on actions by TDP. The technical assistance package proposed to be funded by TDP includes two specific activities. These are (i) an orientation visit to review selected clean coal technology projects in the U.S.,more » and (ii) preparation of a compendium of the main coal sector requirements in Poland and the types of technologies needed. The Definitional Mission has prepared a Scope of Work which recommends that TDP allocate a fund to finance the cost of the above technical assistance activities. It is further recommended that TDP enlist the assistance of a non-profit trade organization to provide this assistance to the Polish government.« less

Cleaning supplies and equipment

MedlinePlus

... gov/ency/patientinstructions/000443.htm Cleaning supplies and equipment To use the sharing features on this page, ... to clean supplies and equipment. Disinfecting Supplies and Equipment Start by wearing the right personal protective equipment ( ...

Flexible, Photopatterned, Colloidal CdSe Semiconductor Nanocrystal Integrated Circuits

NASA Astrophysics Data System (ADS)

Stinner, F. Scott

As semiconductor manufacturing pushes towards smaller and faster transistors, a parallel goal exists to create transistors which are not nearly as small. These transistors are not intended to match the performance of traditional crystalline semiconductors; they are designed to be significantly lower in cost and manufactured using methods that can make them physically flexible for applications where form is more important than speed. One of the developing technologies for this application is semiconductor nanocrystals. We first explore methods to develop CdSe nanocrystal semiconducting "inks" into large-scale, high-speed integrated circuits. We demonstrate photopatterned transistors with mobilities of 10 cm2/Vs on Kapton substrates. We develop new methods for vertical interconnect access holes to demonstrate multi-device integrated circuits including inverting amplifiers with 7 kHz bandwidths, ring oscillators with <10 micros stage delays, and NAND and NOR logic gates. In order to produce higher performance and more consistent transistors, we develop a new hybrid procedure for processing the CdSe nanocrystals. This procedure produces transistors with repeatable performance exceeding 40 cm2/Vs when fabricated on silicon wafers and 16 cm 2/vs when fabricated as part of photopatterned integrated circuits on Kapton substrates. In order to demonstrate the full potential of these transistors, methods to create high-frequency oscillators were developed. These methods allow for transistors to operate at higher voltages as well as provide a means for wirebonding to the Kapton substrate, both of which are required for operating and probing high-frequency oscillators. Simulations of this system show the potential for operation at MHz frequencies. Demonstration of these transistors in this frequency range would open the door for development of CdSe integrated circuits for high-performance sensor, display, and audio applications. To develop further applications of electronics on

Optical devices featuring textured semiconductor layers

DOEpatents

Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

2011-10-11

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Optical devices featuring textured semiconductor layers

DOEpatents

Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

2012-08-07

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Plasma surface cleaning using microwave plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, C.C.; Haselton, H.H.; Nelson, W.D.

1993-11-01

In a microwave electron cyclotron resonance (ECR) plasma source, reactive plasmas of oxygen and its mixture with argon are used for plasma-cleaning experiments. Aluminum test samples (0.95 {times} 1.9 cm) were coated with thin films ({le} 20 {mu}m in thickness) of Shell Vitrea oil and cleaned by using such reactive plasmas. The plasma cleaning was done in various discharge conditions with fixed microwave power, rf power, biased potential, gas pressures (0.5 and 5 mtorr), and operating time up to 35 min. The status of plasma cleaning has been monitored by using mass spectroscopy. Mass loss of the samples after plasmamore » cleaning was measured to estimate cleaning rates. Measured clean rates of low pressure (0.5 mtorr) argon/oxygen plasmas were as high as 2.7 {mu}/min. X-ray photoelectron spectroscopy was used to determine cleanliness of the sample surfaces and confirm the effectiveness of plasma cleaning in achieving atomic levels of surface cleanliness. In this paper, significant results are reported and discussed.« less

Supersonic gas-liquid cleaning system

NASA Technical Reports Server (NTRS)

Caimi, Raoul E. B.; Thaxton, Eric A.

1994-01-01

A system to perform cleaning and cleanliness verification is being developed to replace solvent flush methods using CFC 113 for fluid system components. The system is designed for two purposes: internal and external cleaning and verification. External cleaning is performed with the nozzle mounted at the end of a wand similar to a conventional pressure washer. Internal cleaning is performed with a variety of fixtures designed for specific applications. Internal cleaning includes tubes, pipes, flex hoses, and active fluid components such as valves and regulators. The system uses gas-liquid supersonic nozzles to generate high impingement velocities at the surface of the object to be cleaned. Compressed air or any inert gas may be used to provide the conveying medium for the liquid. The converging-diverging nozzles accelerate the gas-liquid mixture to supersonic velocities. The liquid being accelerated may be any solvent including water. This system may be used commercially to replace CFC and other solvent cleaning methods widely used to remove dust, dirt, flux, and lubricants. In addition, cleanliness verification can be performed without the solvents which are typically involved. This paper will present the technical details of the system, the results achieved during testing at KSC, and future applications for this system.

Supersonic gas-liquid cleaning system

NASA Astrophysics Data System (ADS)

Caimi, Raoul E. B.; Thaxton, Eric A.

1994-02-01

A system to perform cleaning and cleanliness verification is being developed to replace solvent flush methods using CFC 113 for fluid system components. The system is designed for two purposes: internal and external cleaning and verification. External cleaning is performed with the nozzle mounted at the end of a wand similar to a conventional pressure washer. Internal cleaning is performed with a variety of fixtures designed for specific applications. Internal cleaning includes tubes, pipes, flex hoses, and active fluid components such as valves and regulators. The system uses gas-liquid supersonic nozzles to generate high impingement velocities at the surface of the object to be cleaned. Compressed air or any inert gas may be used to provide the conveying medium for the liquid. The converging-diverging nozzles accelerate the gas-liquid mixture to supersonic velocities. The liquid being accelerated may be any solvent including water. This system may be used commercially to replace CFC and other solvent cleaning methods widely used to remove dust, dirt, flux, and lubricants. In addition, cleanliness verification can be performed without the solvents which are typically involved. This paper will present the technical details of the system, the results achieved during testing at KSC, and future applications for this system.

IN-PACKAGE CHEMISTRY ABSTRACTION

DOE Office of Scientific and Technical Information (OSTI.GOV)

E. Thomas

2005-07-14

This report was developed in accordance with the requirements in ''Technical Work Plan for Postclosure Waste Form Modeling'' (BSC 2005 [DIRS 173246]). The purpose of the in-package chemistry model is to predict the bulk chemistry inside of a breached waste package and to provide simplified expressions of that chemistry as a function of time after breach to Total Systems Performance Assessment for the License Application (TSPA-LA). The scope of this report is to describe the development and validation of the in-package chemistry model. The in-package model is a combination of two models, a batch reactor model, which uses the EQ3/6more » geochemistry-modeling tool, and a surface complexation model, which is applied to the results of the batch reactor model. The batch reactor model considers chemical interactions of water with the waste package materials, and the waste form for commercial spent nuclear fuel (CSNF) waste packages and codisposed (CDSP) waste packages containing high-level waste glass (HLWG) and DOE spent fuel. The surface complexation model includes the impact of fluid-surface interactions (i.e., surface complexation) on the resulting fluid composition. The model examines two types of water influx: (1) the condensation of water vapor diffusing into the waste package, and (2) seepage water entering the waste package as a liquid from the drift. (1) Vapor-Influx Case: The condensation of vapor onto the waste package internals is simulated as pure H{sub 2}O and enters at a rate determined by the water vapor pressure for representative temperature and relative humidity conditions. (2) Liquid-Influx Case: The water entering a waste package from the drift is simulated as typical groundwater and enters at a rate determined by the amount of seepage available to flow through openings in a breached waste package.« less

Child-resistant and tamper-resistant packaging: A systematic review to inform tobacco packaging regulation.

PubMed

Jo, Catherine L; Ambs, Anita; Dresler, Carolyn M; Backinger, Cathy L

2017-02-01

We aimed to investigate the effects of special packaging (child-resistant, adult-friendly) and tamper-resistant packaging on health and behavioral outcomes in order to identify research gaps and implications for packaging standards for tobacco products. We searched seven databases for keywords related to special and tamper-resistant packaging, consulted experts, and reviewed citations of potentially relevant studies. 733 unique papers were identified. Two coders independently screened each title and abstract for eligibility. They then reviewed the full text of the remaining papers for a second round of eligibility screening. Included studies investigated a causal relationship between type of packaging or packaging regulation and behavioral or health outcomes and had a study population composed of consumers. Studies were excluded on the basis of publication type, if they were not peer-reviewed, and if they had low external validity. Two reviewers independently coded each paper for study and methodological characteristics and limitations. Discrepancies were discussed and resolved. The review included eight studies: four assessing people's ability to access the contents of different packaging types and four evaluating the impact of packaging requirements on health-related outcomes. Child-resistant packaging was generally more difficult to open than non-child-resistant packaging. Child-resistant packaging requirements have been associated with reductions in child mortality. Child-resistant packaging holds the expectation to reduce tobacco product poisonings among children under six. Published by Elsevier Inc.

Scoring Package

National Institute of Standards and Technology Data Gateway

NIST Scoring Package (PC database for purchase)   The NIST Scoring Package (Special Database 1) is a reference implementation of the draft Standard Method for Evaluating the Performance of Systems Intended to Recognize Hand-printed Characters from Image Data Scanned from Forms.

Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

DOEpatents

Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; Cruz-Campa, Jose Luis

2015-05-12

A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.

Electrochemical characterization of bilayer lipid membrane-semiconductor junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Xiao Kang; Baral, S.; Fendler, J.H.

Three different systems of glyceryl monooleate (GMO), bilayer lipid membrane (BLM) supported semiconductor particles have been prepared and characterized. A single composition of particulate semiconductor deposited only on one side of the BLM constituted system A, two different compositions of particulate semiconductors sequentially deposited on the same side of the BLM represented system B, and two different compositions of particulate semiconductors deposited on the opposite sides of the BLM made up system C.

Asthma risk, cleaning activities and use of specific cleaning products among Spanish indoor cleaners.

PubMed

Zock, J P; Kogevinas, M; Sunyer, J; Almar, E; Muniozguren, N; Payo, F; Sánchez, J L; Antó, J M

2001-02-01

Recent studies have shown an excess risk of asthma for cleaners, but it is not clear which cleaning-related exposures induce or aggravate asthma. Risk factors for asthma were studied among indoor cleaners participating in the Spanish part of the European Community Respiratory Health Survey in 1992. In 1998, 78 of the 91 subjects reporting cleaning-related jobs in 1992 were identified. Of these, 67 indoor cleaners were interviewed by telephone about their cleaning activities and their use of cleaning products in 1992. These data were related to asthma prevalence in 1992, and the cleaners were compared with a reference group of office workers. Asthma prevalence was 1.7 times higher [95% confidence interval (95% CI) 1.1-2.6] among the cleaners than among the referents, being highest among private home cleaners (3.3, 95% CI 1.9-5.8). The prevalence of housedust mite sensitization amounted to 28% for the home cleaners and was significantly (P<0.01) higher than for other indoor cleaners (3%), but similar to the corresponding prevalence of office workers (22%). More than half of the cleaners reported work-related respiratory symptoms. The asthma risk of the home cleaners was mainly associated with kitchen cleaning and furniture polishing, with the use of oven sprays and polishes. The asthma risk of Spanish cleaners is primarily related to the cleaning of private homes. This relationship may be explained by the use of sprays and other products in kitchen cleaning and furniture polishing.

Package Up Your Troubles--An Introduction to Package Libraries

ERIC Educational Resources Information Center

Frank, Colin

1978-01-01

Discusses a "package deal" library--a prefabricated building including interior furnishing--in terms of costs, fitness for purpose, and interior design, i.e., shelving, flooring, heating, lighting, and humidity. Advantages and disadvantages of the package library are also considered. (Author/MBR)

Laser paper cleaning: the method of cleaning historical books

NASA Astrophysics Data System (ADS)

Zekou, Evangelini; Tsilikas, Ioannis; Chatzitheodoridis, Elias; Serafetinides, Alexander A.

2016-01-01

Conservation of cultural heritage treasures is the most important issue for transferring knowledge to the public through the next generation of students, academics, and researchers. Although this century is authenticating e-books and information by means of electronic text, still historical manuscripts as content as well as objects are the main original recourses of keeping a record of this transformation. The current work focuses on cleaning paper samples by the application of pulsed light, which is interventional. Experiments carried out using paper samples that are artificially colonized with Ulocladium chartarum. Paper is treated by Nd:YAG laser light. The available wavelength is 1064 nm, at various fluences, repetition rates and number of pulses. Two types of paper are stained with fungi colonies, which grow on substrates of clean paper, as well as on paper with ink text. The first type of paper is Whatman No.1056, which is closer to pure cellulose. The second type of paper is a page of a cultural heritage book published in 1926. Cleaning is performed using laser irradiation, thus defining the damage threshold of each sample. The treatment on paper Watman showed a yellowing, especially on areas with high concentration of fungi. The second sample was more durable to the exposure, performing the best results at higher fluences. Eventually, the paper samples are characterized, with optical microscopy and SEM/EDX analyses, prior to and after cleaning.

Environmental and health risks of chlorine trifluoride (ClF3), an alternative to potent greenhouse gases in the semiconductor industry.

PubMed

Tsai, Wen-Tien

2011-06-15

The first accident involving chlorine trifluoride (ClF(3)) in the history of semiconductor fabrication processes occurred on 28 July 2006 at Hsinchu (Taiwan), resulting in a large release of the highly reactive material and causing the chemical burn to several workers. ClF(3) is used primarily as an in situ cleaning gas in the manufacture of semiconductor silicon-wafer devices in replacement of perfluorocompounds (PFCs) because they have the high potential to contribute significantly to the global warming. This article aimed at reviewing ClF(3) in the physicochemical properties, the industrial uses, and the environmental implications on the basis of its toxicity, reactivity, health hazards and exposure limits. The health hazards of probable decomposition/hydrolysis products from ClF(3) were also evaluated based on their basic physicochemical properties and occupational exposure limits. The occupational exposure assessment was further discussed to understand potentially hazardous risks caused by hydrogen fluoride and fluorides from the decomposition/hydrolysis products of ClF(3). Copyright © 2010 Elsevier B.V. All rights reserved.

The Clean Energy Manufacturing Analysis Center (CEMAC): Providing Analysis and Insights on Clean Technology Manufacturing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Nicholi S

The U.S. Department of Energy's Clean Energy Manufacturing Analysis Center (CEMAC) provides objective analysis and up-to-date data on global supply chains and manufacturing of clean energy technologies. Policymakers and industry leaders seek CEMAC insights to inform choices to promote economic growth and the transition to a clean energy economy.

Codoped direct-gap semiconductor scintillators

DOEpatents

Derenzo, Stephen Edward [Pinole, CA; Bourret-Courchesne, Edith [Berkeley, CA; Weber, Marvin J [Danville, CA; Klintenberg, Mattias K [Berkeley, CA

2008-07-29

Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

Codoped direct-gap semiconductor scintillators

DOEpatents

Derenzo, Stephen E.; Bourret-Courchesne, Edith; Weber, Marvin J.; Klintenberg, Mattias K.

2006-05-23

Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

Cleaning method and apparatus

DOEpatents

Jackson, D.D.; Hollen, R.M.

1981-02-27

A method of very thoroughly and quikcly cleaning a guaze electrode used in chemical analyses is given, as well as an automobile cleaning apparatus which makes use of the method. The method generates very little waste solution, and this is very important in analyzing radioactive materials, especially in aqueous solutions. The cleaning apparatus can be used in a larger, fully automated controlled potential coulometric apparatus. About 99.98% of a 5 mg plutonium sample was removed in less than 3 minutes, using only about 60 ml of rinse solution and two main rinse steps.

Cleaning method and apparatus

DOEpatents

Jackson, Darryl D.; Hollen, Robert M.

1983-01-01

A new automatable cleaning apparatus which makes use of a method of very thoroughly and quickly cleaning a gauze electrode used in chemical analyses is given. The method generates very little waste solution, and this is very important in analyzing radioactive materials, especially in aqueous solutions. The cleaning apparatus can be used in a larger, fully automated controlled potential coulometric apparatus. About 99.98% of a 5 mg. plutonium sample was removed in less than 3 minutes, using only about 60 ml. of rinse solution and two main rinse steps.

Cavitation effects in ultrasonic cleaning baths

NASA Technical Reports Server (NTRS)

Glasscock, Barbara H.

1995-01-01

In this project, the effect of cavitation from aqueous ultrasonic cleaning on the surfaces of metal and non-metal sample coupons was studied. After twenty cleaning cycles, the mass loss from the aluminum coupons averaged 0.22 mg/sq cm surface area and 0.014 mg/sq cm for both stainless steel and titanium. The aluminum coupons showed visual evidence of minor cavitation erosion in regions of previously existing surface irregularities. The non-metal samples showed some periods of mass gain. These effects are believed to have minor impact on hardware being cleaned, but should be evaluated in the context of specific hardware requirements. Also the ultrasonic activity in the large cleaning baths was found to be unevenly distributed as measured by damage to sheets of aluminum foil. It is therefore recommended that items being cleaned in an ultrasonic bath be moved or conveyed during the cleaning to more evenly distribute the cavitation action provide more uniform cleaning.

Child-resistant and tamper-resistant packaging: A systematic review to inform tobacco packaging regulation

PubMed Central

Jo, Catherine L.; Ambs, Anita; Dresler, Carolyn M.; Backinger, Cathy L.

2017-01-01

Objective We aimed to investigate the effects of special packaging (child-resistant, adult-friendly) and tamper-resistant packaging on health and behavioral outcomes in order to identify research gaps and implications for packaging standards for tobacco products. Methods We searched seven databases for keywords related to special and tamper-resistant packaging, consulted experts, and reviewed citations of potentially relevant studies. 733 unique papers were identified. Two coders independently screened each title and abstract for eligibility. They then reviewed the full text of the remaining papers for a second round of eligibility screening. Included studies investigated a causal relationship between type of packaging or packaging regulation and behavioral or health outcomes and had a study population composed of consumers. Studies were excluded on the basis of publication type, if they were not peer-reviewed, and if they had low external validity. Two reviewers independently coded each paper for study and methodological characteristics and limitations. Discrepancies were discussed and resolved. Results The review included eight studies: four assessing people’s ability to access the contents of different packaging types and four evaluating the impact of packaging requirements on health-related outcomes. Child-resistant packaging was generally more difficult to open than non-child-resistant packaging. Child-resistant packaging requirements have been associated with reductions in child mortality. Conclusions Child-resistant packaging holds the expectation to reduce tobacco product poisonings among children under six. PMID:27939602

The AMOS cell - An improved metal-semiconductor solar cell. [Antireflection coated Metal Oxide Semiconductor

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y.-C. M.

1975-01-01

A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.

Photovoltaic healing of non-uniformities in semiconductor devices

DOEpatents

Karpov, Victor G.; Roussillon, Yann; Shvydka, Diana; Compaan, Alvin D.; Giolando, Dean M.

2006-08-29

A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.

Extremely Low Frequency-Magnetic Field (ELF-MF) Exposure Characteristics among Semiconductor Workers

PubMed Central

Choi, Sangjun; Cha, Wonseok; Kim, Won; Yoon, Chungsik; Park, Ju-Hyun; Ha, Kwonchul; Park, Donguk

2018-01-01

We assessed the exposure of semiconductor workers to extremely low frequency-magnetic fields (ELF-MF) and identified job characteristics affecting ELF-MF exposure. These were demonstrated by assessing the exposure of 117 workers involved in wafer fabrication (fab) and chip packaging wearing personal dosimeters for a full shift. A portable device was used to monitor ELF-MF in high temporal resolution. All measurements were categorized by operation, job and working activity during working time. ELF-MF exposure of workers were classified based on the quartiles of ELF-MF distribution. The average levels of ELF-MF exposure were 0.56 µT for fab workers, 0.59 µT for chip packaging workers and 0.89 µT for electrical engineers, respectively. Exposure to ELF-MF differed among types of factory, operation, job and activity. Workers engaged in the diffusion and chip testing activities showed the highest ELF-MF exposure. The ELF-MF exposures of process operators were found to be higher than those of maintenance engineers, although peak exposure and/or patterns varied. The groups with the highest quartile ELF-MF exposure level are operators in diffusion, ion implantation, module and testing operations, and maintenance engineers in diffusion, module and testing operations. In conclusion, ELF-MF exposure among workers can be substantially affected by the type of operation and job, and the activity or location. PMID:29614730

New Finsler package

NASA Astrophysics Data System (ADS)

Youssef, Nabil L.; Elgendi, S. G.

2014-03-01

The book “Handbook of Finsler geometry” has been included with a CD containing an elegant Maple package, FINSLER, for calculations in Finsler geometry. Using this package, an example concerning a Finsler generalization of Einstein’s vacuum field equations was treated. In this example, the calculation of the components of the hv-curvature of Cartan connection leads to wrong expressions. On the other hand, the FINSLER package works only in dimension four. We introduce a new Finsler package in which we fix the two problems and solve them. Moreover, we extend this package to compute not only the geometric objects associated with Cartan connection but also those associated with Berwald, Chern and Hashiguchi connections in any dimension. These improvements have been illustrated by a concrete example. Furthermore, the problem of simplifying tensor expressions is treated. This paper is intended to make calculations in Finsler geometry more easier and simpler.

Controlled growth of semiconductor crystals

DOEpatents

Bourret-Courchesne, Edith D.

1992-01-01

A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

Energetics of the Semiconductor-Electrolyte Interface.

ERIC Educational Resources Information Center

Turner, John A.

1983-01-01

The use of semiconductors as electrodes for electrochemistry requires an understanding of both solid-state physics and electrochemistry, since phenomena associated with both disciplines are seen in semiconductor/electrolyte systems. The interfacial energetics of these systems are discussed. (JN)

Cleaning practices and cleaning products in nurseries and schools: to what extent can they impact indoor air quality?

PubMed

Wei, W; Boumier, J; Wyart, G; Ramalho, O; Mandin, C

2016-08-01

In the framework of a nationwide survey on indoor air quality conducted from September 2009 to June 2011 in 310 nurseries, kindergartens, and elementary schools in all regions of France, cleaning practices and products were described through an extensive questionnaire completed on-site by expert building inspectors. The questionnaire included the cleaning frequencies and periods, cleaning techniques, whether windows were open during cleaning, and the commercial names of the products used. Analysis of the questionnaire responses showed that cleaning was generally performed daily for furniture and floors. It was performed mostly in the evening with wet mopping and with one or more windows open. Five hundred eighty-four different cleaning products were listed, among which 218 safety data sheets (SDSs) were available and analyzed. One hundred fifty-two chemical substances were identified in the SDSs. The typical substances in cleaning products included alcohols, chlorides, terpenes, aldehydes, and ethers; more than half of them are irritants. Two endocrine disruptors, 2-phenylphenol and Galaxolide, were identified in two cleaning products used every day to clean the floors, in seven kindergartens and in a nursery respectively. Eleven reactive substances containing C=C double bonds, mostly terpenes, were identified in a wide variety of cleaning products. © 2015 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Paperless Work Package Application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kilgore, Jr., William R.; Morrell, Jr., Otto K.; Morrison, Dan

2014-07-31

Paperless Work Package (PWP) System is a computer program process that takes information from Asset Suite, provides a platform for other electronic inputs, Processes the inputs into an electronic package that can be downloaded onto an electronic work tablet or laptop computer, provides a platform for electronic inputs into the work tablet, and then transposes those inputs back into Asset Suite and to permanent SRS records. The PWP System will basically eliminate paper requirements from the maintenance work control system. The program electronically relays the instructions given by the planner to work on a piece of equipment which is currentlymore » relayed via a printed work package. The program does not control/approve what is done. The planner will continue to plan the work package, the package will continue to be routed, approved, and scheduled. The supervisor reviews and approves the work to be performed and assigns work to individuals or to a work group. (The supervisor conducts pre job briefings with the workers involved in the job) The Operations Manager (Work Controlling Entity) approves the work package electronically for the work that will be done in his facility prior to work starting. The PWP System will provide the package in an electronic form. All the reviews, approvals, and safety measures taken by people outside the electronic package does not change from the paper driven work packages.« less

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deri, R J

2011-01-03

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and productionmore » capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a {approx} 200 {micro}s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost

Electrical contacts for a thin-film semiconductor device

DOEpatents

Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

1989-08-08

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Lattice matched semiconductor growth on crystalline metallic substrates

DOEpatents

Norman, Andrew G; Ptak, Aaron J; McMahon, William E

2013-11-05

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

Semiconductors: A 21st Century Social Studies Topic.

ERIC Educational Resources Information Center

Sunal, Cynthia

2000-01-01

Addresses the reasons for exploring semiconductor technology and organic semiconductors in schools for either middle school or secondary students in an interdisciplinary social studies and science environment. Provides background information on transistors and semiconductors. Offers three social studies lessons and related science lessons if an…

REPLACING SOLVENT CLEANING WITH AQUEOUS CLEANING

EPA Science Inventory

The report documents actions taken by Robert Bosch Corp., Charleston, SC, in replacing the cleaning solvents 1, 1, 2- trichloro-1, 2, 2-trifluoroethane (CFC-113) and trichloroethylene (TCE) with aqueous solutions. Bosch has succeeded in eliminating all their CFC-113 use and so f...

Prevention policies addressing packaging and packaging waste: Some emerging trends.

PubMed

Tencati, Antonio; Pogutz, Stefano; Moda, Beatrice; Brambilla, Matteo; Cacia, Claudia

2016-10-01

Packaging waste is a major issue in several countries. Representing in industrialized countries around 30-35% of municipal solid waste yearly generated, this waste stream has steadily grown over the years even if, especially in Europe, specific recycling and recovery targets have been fixed. Therefore, an increasing attention starts to be devoted to prevention measures and interventions. Filling a gap in the current literature, this explorative paper is a first attempt to map the increasingly important phenomenon of prevention policies in the packaging sector. Through a theoretical sampling, 11 countries/states (7 in and 4 outside Europe) have been selected and analyzed by gathering and studying primary and secondary data. Results show evidence of three specific trends in packaging waste prevention policies: fostering the adoption of measures directed at improving packaging design and production through an extensive use of the life cycle assessment; raising the awareness of final consumers by increasing the accountability of firms; promoting collaborative efforts along the packaging supply chains. Copyright © 2016 Elsevier Ltd. All rights reserved.

Food packages for Space Shuttle

NASA Technical Reports Server (NTRS)

Fohey, M. F.; Sauer, R. L.; Westover, J. B.; Rockafeller, E. F.

1978-01-01

The paper reviews food packaging techniques used in space flight missions and describes the system developed for the Space Shuttle. Attention is directed to bite-size food cubes used in Gemini, Gemini rehydratable food packages, Apollo spoon-bowl rehydratable packages, thermostabilized flex pouch for Apollo, tear-top commercial food cans used in Skylab, polyethylene beverage containers, Skylab rehydratable food package, Space Shuttle food package configuration, duck-bill septum rehydration device, and a drinking/dispensing nozzle for Space Shuttle liquids. Constraints and testing of packaging is considered, a comparison of food package materials is presented, and typical Shuttle foods and beverages are listed.

Semiconductor millimeter wavelength electronics

NASA Astrophysics Data System (ADS)

Rosenbaum, F. J.

1985-12-01

This final report summarizes the results of research carried out on topics in millimeter wavelength semiconductor electronics under an ONR Selected Research Opportunity program. Study areas included III-V compound semiconductor growth and characterization, microwave and millimeter wave device modeling, fabrication and testing, and the development of new device concepts. A new millimeter wave mixer and detector, the Gap diode was invented. Topics reported on include ballistic transport, Zener oscillations, impurities in GaAs, electron velocity-electric field calculation and measurements, etc., calculations.

Method of physical vapor deposition of metal oxides on semiconductors

DOEpatents

Norton, David P.

2001-01-01

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Surface preparation of substances for continuous convective assembly of fine particles

DOEpatents

Rossi, Robert

2003-01-01

A method for producing periodic nanometer-scale arrays of metal or semiconductor junctions on a clean semiconductor substrate surface is provided comprising the steps of: etching the substrate surface to make it hydrophilic, forming, under an inert atmosphere, a crystalline colloid layer on the substrate surface, depositing a metal or semiconductor material through the colloid layer onto the surface of the substrate, and removing the colloid from the substrate surface. The colloid layer is grown on the clean semiconductor surface by withdrawing the semiconductor substrate from a sol of colloid particles.

Clean Air Act Text

EPA Pesticide Factsheets

The Clean Air Act is the law that defines EPA's responsibilities for protecting and improving the nation's air quality and the stratospheric ozone layer. The last major change in the law, the Clean Air Act Amendments of 1990, enacted in 1990 by Congress.

Clean Energy Manufacturing Initiative

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2013-04-01

The initiative will strategically focus and rally EERE’s clean energy technology offices and Advanced Manufacturing Office around the urgent competitive opportunity for the United States to be the leader in the clean energy manufacturing industries and jobs of today and tomorrow.

In-Package Chemistry Abstraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

E. Thomas

2004-11-09

This report was developed in accordance with the requirements in ''Technical Work Plan for: Regulatory Integration Modeling and Analysis of the Waste Form and Waste Package'' (BSC 2004 [DIRS 171583]). The purpose of the in-package chemistry model is to predict the bulk chemistry inside of a breached waste package and to provide simplified expressions of that chemistry as function of time after breach to Total Systems Performance Assessment for the License Application (TSPA-LA). The scope of this report is to describe the development and validation of the in-package chemistry model. The in-package model is a combination of two models, amore » batch reactor model that uses the EQ3/6 geochemistry-modeling tool, and a surface complexation model that is applied to the results of the batch reactor model. The batch reactor model considers chemical interactions of water with the waste package materials and the waste form for commercial spent nuclear fuel (CSNF) waste packages and codisposed waste packages that contain both high-level waste glass (HLWG) and DOE spent fuel. The surface complexation model includes the impact of fluid-surface interactions (i.e., surface complexation) on the resulting fluid composition. The model examines two types of water influx: (1) the condensation of water vapor that diffuses into the waste package, and (2) seepage water that enters the waste package from the drift as a liquid. (1) Vapor Influx Case: The condensation of vapor onto the waste package internals is simulated as pure H2O and enters at a rate determined by the water vapor pressure for representative temperature and relative humidity conditions. (2) Water Influx Case: The water entering a waste package from the drift is simulated as typical groundwater and enters at a rate determined by the amount of seepage available to flow through openings in a breached waste package. TSPA-LA uses the vapor influx case for the nominal scenario for simulations where the waste package has been

Characterization of occupational exposures to cleaning products used for common cleaning tasks--a pilot study of hospital cleaners.

PubMed

Bello, Anila; Quinn, Margaret M; Perry, Melissa J; Milton, Donald K

2009-03-27

In recent years, cleaning has been identified as an occupational risk because of an increased incidence of reported respiratory effects, such as asthma and asthma-like symptoms among cleaning workers. Due to the lack of systematic occupational hygiene analyses and workplace exposure data, it is not clear which cleaning-related exposures induce or aggravate asthma and other respiratory effects. Currently, there is a need for systematic evaluation of cleaning products ingredients and their exposures in the workplace. The objectives of this work were to: a) identify cleaning products' ingredients of concern with respect to respiratory and skin irritation and sensitization; and b) assess the potential for inhalation and dermal exposures to these ingredients during common cleaning tasks. We prioritized ingredients of concern in cleaning products commonly used in several hospitals in Massachusetts. Methods included workplace interviews, reviews of product Materials Safety Data Sheets and the scientific literature on adverse health effects to humans, reviews of physico-chemical properties of cleaning ingredients, and occupational hygiene observational analyses. Furthermore, the potential for exposure in the workplace was assessed by conducting qualitative assessment of airborne exposures and semi-quantitative assessment of dermal exposures. Cleaning products used for common cleaning tasks were mixtures of many chemicals, including respiratory and dermal irritants and sensitizers. Examples of ingredients of concern include quaternary ammonium compounds, 2-butoxyethanol, and ethanolamines. Cleaning workers are at risk of acute and chronic inhalation exposures to volatile organic compounds (VOC) vapors and aerosols generated from product spraying, and dermal exposures mostly through hands. Cleaning products are mixtures of many chemical ingredients that may impact workers' health through air and dermal exposures. Because cleaning exposures are a function of product

Characterization of occupational exposures to cleaning products used for common cleaning tasks-a pilot study of hospital cleaners

PubMed Central

2009-01-01

Background In recent years, cleaning has been identified as an occupational risk because of an increased incidence of reported respiratory effects, such as asthma and asthma-like symptoms among cleaning workers. Due to the lack of systematic occupational hygiene analyses and workplace exposure data, it is not clear which cleaning-related exposures induce or aggravate asthma and other respiratory effects. Currently, there is a need for systematic evaluation of cleaning products ingredients and their exposures in the workplace. The objectives of this work were to: a) identify cleaning products' ingredients of concern with respect to respiratory and skin irritation and sensitization; and b) assess the potential for inhalation and dermal exposures to these ingredients during common cleaning tasks. Methods We prioritized ingredients of concern in cleaning products commonly used in several hospitals in Massachusetts. Methods included workplace interviews, reviews of product Materials Safety Data Sheets and the scientific literature on adverse health effects to humans, reviews of physico-chemical properties of cleaning ingredients, and occupational hygiene observational analyses. Furthermore, the potential for exposure in the workplace was assessed by conducting qualitative assessment of airborne exposures and semi-quantitative assessment of dermal exposures. Results Cleaning products used for common cleaning tasks were mixtures of many chemicals, including respiratory and dermal irritants and sensitizers. Examples of ingredients of concern include quaternary ammonium compounds, 2-butoxyethanol, and ethanolamines. Cleaning workers are at risk of acute and chronic inhalation exposures to volatile organic compounds (VOC) vapors and aerosols generated from product spraying, and dermal exposures mostly through hands. Conclusion Cleaning products are mixtures of many chemical ingredients that may impact workers' health through air and dermal exposures. Because cleaning

Thienoacene-based organic semiconductors.

PubMed

Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

2011-10-11

Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Physics of Semiconductors

NASA Astrophysics Data System (ADS)

Brennan, Kevin F.

1999-02-01

Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

Creating semiconductor metafilms with designer absorption spectra

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung

The optical properties of semiconductors are typically considered intrinsic and fixed. Here we leverage the rapid developments in the field of optical metamaterials to create ultrathin semiconductor metafilms with designer absorption spectra. We show how such metafilms can be constructed by placing one or more types of high-index semiconductor antennas into a dense array with subwavelength spacings. It is argued that the large absorption cross-section of semiconductor antennas and their weak near-field coupling open a unique opportunity to create strongly absorbing metafilms whose spectral absorption properties directly reflect those of the individual antennas. Using experiments and simulations, we demonstrate thatmore » near-unity absorption at one or more target wavelengths of interest can be achieved in a sub-50-nm-thick metafilm using judiciously sized and spaced Ge nanobeams. The ability to create semiconductor metafilms with custom absorption spectra opens up new design strategies for planar optoelectronic devices and solar cells.« less

Cleaning Physical Education Areas.

ERIC Educational Resources Information Center

Griffin, William R.

1999-01-01

Discusses techniques to help create clean and inviting school locker rooms. Daily, weekly or monthly, biannual, and annual cleaning strategies for locker room showers are highlighted as are the specialized maintenance needs for aerobic and dance areas, running tracks, and weight training areas. (GR)

Green Cleaning Label Power

ERIC Educational Resources Information Center

Balek, Bill

2012-01-01

Green cleaning plays a significant and supportive role in helping education institutions meet their sustainability goals. However, identifying cleaning products, supplies and equipment that truly are environmentally preferable can be daunting. The marketplace is inundated with products and services purporting to be "green" or environmentally…

A single-dose regimen for antimicrobial prophylaxis to prevent perioperative infection in urological clean and clean-contaminated surgery.

PubMed

Higuchi, Yoshihide; Takesue, Yoshio; Yamada, Yusuke; Ueda, Yasuo; Suzuki, Toru; Aihara, Kinue; Maruyama, Takuo; Kondoh, Nobuyuki; Nojima, Michio; Yamamoto, Shingo

2011-04-01

A single dose of antimicrobial prophylaxis (AMP) was administered parenterally for the prevention of perioperative infection in a total of 788 patients undergoing urological surgery, including 380 endoscopic-instrumental, 328 clean, and 80 clean-contaminated operations performed at our institute between January 2007 and December 2009. Surgical site infections (SSIs), urinary tract infections (UTIs), and remote infections (RIs) were prospectively surveyed. The definition for a single dose of AMP allowed for the administration of an additional dose of an antimicrobial during surgery if the procedure was longer than 3 h, but not for the parenteral or oral administration at the end of the procedure in the recovery room, or at a later time over a period of more than 24 h. UTI was observed in 12 (3.2%) patients after endoscopic-instrumental operation, 1 (0.3%) after clean operation, and 1 (0.9%) after clean-contaminated operation. SSI was observed in 2 (0.6%) patients after clean operation but in none after clean-contaminated operations. RI was observed in 1 (0.3%) patient after endoscopic-instrumental operation, 3 (0.9%) after clean operation, and none after clean-contaminated operations. A single-dose regimen of AMP was effective and feasible for the prevention of perioperative infections, including SSIs, UTIs, and RIs, in endoscopic-instrumental, clean, and clean-contaminated urological surgical procedures.

Thermovoltaic semiconductor device including a plasma filter

DOEpatents

Baldasaro, Paul F.

1999-01-01

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

National Clean Fleets Partnership (Fact Sheet)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

2012-01-01

Provides an overview of Clean Cities National Clean Fleets Partnership (NCFP). The NCFP is open to large private-sector companies that have fleet operations in multiple states. Companies that join the partnership receive customized assistance to reduce petroleum use through increased efficiency and use of alternative fuels. This initiative provides fleets with specialized resources, expertise, and support to successfully incorporate alternative fuels and fuel-saving measures into their operations. The National Clean Fleets Partnership builds on the established success of DOE's Clean Cities program, which reduces petroleum consumption at the community level through a nationwide network of coalitions that work with localmore » stakeholders. Developed with input from fleet managers, industry representatives, and Clean Cities coordinators, the National Clean Fleets Partnership goes one step further by working with large private-sector fleets.« less

75 FR 11560 - Notice of Lodging of Consent Decree Under the Clean Water Act and Clean Air Act

Federal Register 2010, 2011, 2012, 2013, 2014

2010-03-11

... DEPARTMENT OF JUSTICE Notice of Lodging of Consent Decree Under the Clean Water Act and Clean Air... for the Defendant's violations of the Clean Water Act, 33 U.S.C. 1251 et seq., and the Clean Air Act... including the installation of water effluent controls, the rerouting of air emissions through control...

Dynamic quadrupole interactions in semiconductors

NASA Astrophysics Data System (ADS)

Dang, Thien Thanh; Schell, Juliana; Lupascu, Doru C.; Vianden, Reiner

2018-04-01

The time differential perturbed angular correlation, TDPAC, technique has been used for several decades to study electric quadrupole hyperfine interactions in semiconductors such as dynamic quadrupole interactions (DQI) resulting from after-effects of the nuclear decay as well as static quadrupole interactions originating from static defects around the probe nuclei such as interstitial ions, stresses in the crystalline structure, and impurities. Nowadays, the quality of the available semiconductor materials is much better, allowing us to study purely dynamic interactions. We present TDPAC measurements on pure Si, Ge, GaAs, and InP as a function of temperature between 12 K and 110 K. The probe 111In (111Cd) was used. Implantation damage was recovered by thermal annealing. Si experienced the strongest DQI with lifetime, τg, increasing with rising temperature, followed by Ge. In contrast, InP and GaAs, which have larger band gaps and less electron concentration than Si and Ge in the same temperature range, presented no DQI. The results obtained also allow us to conclude that indirect band gap semiconductors showed the dynamic interaction, whereas the direct band gap semiconductors, restricted to GaAs and InP, did not.

Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

DOEpatents

Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

2011-08-23

A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

Controlling Molecular Doping in Organic Semiconductors.

PubMed

Jacobs, Ian E; Moulé, Adam J

2017-11-01

The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Components of Adenovirus Genome Packaging

PubMed Central

Ahi, Yadvinder S.; Mittal, Suresh K.

2016-01-01

Adenoviruses (AdVs) are icosahedral viruses with double-stranded DNA (dsDNA) genomes. Genome packaging in AdV is thought to be similar to that seen in dsDNA containing icosahedral bacteriophages and herpesviruses. Specific recognition of the AdV genome is mediated by a packaging domain located close to the left end of the viral genome and is mediated by the viral packaging machinery. Our understanding of the role of various components of the viral packaging machinery in AdV genome packaging has greatly advanced in recent years. Characterization of empty capsids assembled in the absence of one or more components involved in packaging, identification of the unique vertex, and demonstration of the role of IVa2, the putative packaging ATPase, in genome packaging have provided compelling evidence that AdVs follow a sequential assembly pathway. This review provides a detailed discussion on the functions of the various viral and cellular factors involved in AdV genome packaging. We conclude by briefly discussing the roles of the empty capsids, assembly intermediates, scaffolding proteins, portal vertex and DNA encapsidating enzymes in AdV assembly and packaging. PMID:27721809

Controlled growth of semiconductor crystals

DOEpatents

Bourret-Courchesne, E.D.

1992-07-21

A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

40 CFR 63.744 - Standards: Cleaning operations.

Code of Federal Regulations, 2014 CFR

2014-07-01

... system with equivalent emission control. (e) Exempt cleaning operations. The following cleaning...) Cleaning of aircraft and ground support equipment fluid systems that are exposed to the fluid, including... 40 Protection of Environment 11 2014-07-01 2014-07-01 false Standards: Cleaning operations. 63.744...

40 CFR 63.744 - Standards: Cleaning operations.

Code of Federal Regulations, 2013 CFR

2013-07-01

... system with equivalent emission control. (e) Exempt cleaning operations. The following cleaning...) Cleaning of aircraft and ground support equipment fluid systems that are exposed to the fluid, including... 40 Protection of Environment 11 2013-07-01 2013-07-01 false Standards: Cleaning operations. 63.744...

40 CFR 63.744 - Standards: Cleaning operations.

Code of Federal Regulations, 2012 CFR

2012-07-01

... system with equivalent emission control. (e) Exempt cleaning operations. The following cleaning...) Cleaning of aircraft and ground support equipment fluid systems that are exposed to the fluid, including... 40 Protection of Environment 11 2012-07-01 2012-07-01 false Standards: Cleaning operations. 63.744...

40 CFR 63.744 - Standards: Cleaning operations.

Code of Federal Regulations, 2011 CFR

2011-07-01

... system with equivalent emission control. (e) Exempt cleaning operations. The following cleaning...) Cleaning of aircraft and ground support equipment fluid systems that are exposed to the fluid, including... 40 Protection of Environment 10 2011-07-01 2011-07-01 false Standards: Cleaning operations. 63.744...

40 CFR 63.744 - Standards: Cleaning operations.

Code of Federal Regulations, 2010 CFR

2010-07-01

... system with equivalent emission control. (e) Exempt cleaning operations. The following cleaning...) Cleaning of aircraft and ground support equipment fluid systems that are exposed to the fluid, including... 40 Protection of Environment 10 2010-07-01 2010-07-01 false Standards: Cleaning operations. 63.744...

#CleanTechNow

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moniz, Ernest

2013-09-17

Over the past four years, America's clean energy future has come into sharper focus. Yesterday's visionary goals are now hard data -- tangible evidence that our energy system is undergoing a transformation. The Energy Department's new paper "Revolution Now: The Future Arrives for Four Clean Energy Technologies" highlights these changes and shows how cost reductions and product improvements have sparked a surge in consumer demand for wind turbines, solar panels, electric cars and super efficient lighting.

#CleanTechNow

ScienceCinema

Moniz, Ernest

2018-01-16

Over the past four years, America's clean energy future has come into sharper focus. Yesterday's visionary goals are now hard data -- tangible evidence that our energy system is undergoing a transformation. The Energy Department's new paper "Revolution Now: The Future Arrives for Four Clean Energy Technologies" highlights these changes and shows how cost reductions and product improvements have sparked a surge in consumer demand for wind turbines, solar panels, electric cars and super efficient lighting.

Method of transferring a thin crystalline semiconductor layer

DOEpatents

Nastasi, Michael A [Sante Fe, NM; Shao, Lin [Los Alamos, NM; Theodore, N David [Mesa, AZ

2006-12-26

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Significant OH production under surface cleaning and air cleaning conditions: Impact on indoor air quality.

PubMed

Carslaw, N; Fletcher, L; Heard, D; Ingham, T; Walker, H

2017-11-01

We report measurements of hydroxyl (OH) and hydroperoxy (HO 2 ) radicals made by laser-induced fluorescence spectroscopy in a computer classroom (i) in the absence of indoor activities (ii) during desk cleaning with a limonene-containing cleaner (iii) during operation of a commercially available "air cleaning" device. In the unmanipulated environment, the one-minute averaged OH concentration remained close to or below the limit of detection (6.5×10 5  molecule cm -3 ), whilst that of HO 2 was 1.3×10 7  molecule cm -3 . These concentrations increased to ~4×10 6 and 4×10 8  molecule cm -3 , respectively during desk cleaning. During operation of the air cleaning device, OH and HO 2 concentrations reached ~2×10 7 and ~6×10 8  molecule cm -3 respectively. The potential of these OH concentrations to initiate chemical processing is explored using a detailed chemical model for indoor air (the INDCM). The model can reproduce the measured OH and HO 2 concentrations to within 50% and often within a few % and demonstrates that the resulting secondary chemistry varies with the cleaning activity. Whilst terpene reaction products dominate the product composition following surface cleaning, those from aromatics and other VOCs are much more important during the use of the air cleaning device. © 2017 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Environmentally compatible hand wipe cleaning solvents

NASA Technical Reports Server (NTRS)

Clayton, Catherine P.; Kovach, Michael P.

1995-01-01

Several solvents of environmental concern have previously been used for hand wipe cleaning of SRB surfaces, including 1,1,1-trichloroethane, perchloroethylene, toluene, xylene, and MEK. USBI determined the major types of surfaces involved, and qualification requirements of replacement cleaning agents. Nineteen environmentally compatible candidates were tested on 33 material substrates with 26 types of potential surface contaminants, involving over 7,000 individual evaluations. In addition to the cleaning performance evaluation, bonding, compatibility, and corrosion tests were conducted. Results showed that one cleaner was not optimum for all surfaces. In most instances, some of the candidates cleaned better than the 1,1,1-trichloroethane baseline control. Aqueous cleaners generally cleaned better, and were more compatible with nonmetallic materials, such as paints, plastics, and elastomers. Organic base cleaners were better on metal surfaces. Five cleaners have been qualified and are now being implemented in SRB hand wipe cleaning operations.

Green Packaging Management of Logistics Enterprises

NASA Astrophysics Data System (ADS)

Zhang, Guirong; Zhao, Zongjian

From the connotation of green logistics management, we discuss the principles of green packaging, and from the two levels of government and enterprises, we put forward a specific management strategy. The management of green packaging can be directly and indirectly promoted by laws, regulations, taxation, institutional and other measures. The government can also promote new investment to the development of green packaging materials, and establish specialized institutions to identify new packaging materials, standardization of packaging must also be accomplished through the power of the government. Business units of large scale through the packaging and container-based to reduce the use of packaging materials, develop and use green packaging materials and easy recycling packaging materials for proper packaging.

Interconnected semiconductor devices

DOEpatents

Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

1990-10-23

Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

Modular avionics packaging standardization

NASA Astrophysics Data System (ADS)

Austin, M.; McNichols, J. K.

The Modular Avionics Packaging (MAP) Program for packaging future military avionics systems with the objective of improving reliability, maintainability, and supportability, and reducing equipment life cycle costs is addressed. The basic MAP packaging concepts called the Standard Avionics Module, the Standard Enclosure, and the Integrated Rack are summarized, and the benefits of modular avionics packaging, including low risk design, technology independence with common functions, improved maintainability and life cycle costs are discussed. Progress made in MAP is briefly reviewed.

Microbial profiles of commercial, vacuum-packaged, fresh pork of normal or short storage life.

PubMed

Holley, Richard A; Peirson, Michael D; Lam, Jocelyn; Tan, Kit Bee

2004-12-01

The microbial ecology of fresh vacuum-packed pork cuts during storage at -1.5 degrees C for up to 45 days was examined to characterize rates of microbial growth and pH changes in commercially prepared products of normal storage quality. Pork loins in commercial distribution with odour defects were also studied to determine a possible cause of the defects and avoid future problems. In addition, microbial profiles of pork cuts from two plants were compared, after storage for 25 days at -1.5 degrees C, to identify possible reasons for differences in the storage life of product from the plants. The effects of a change in sanitation procedures on the microbial populations of products stored for 25 days were also studied. With normal product, microbial growth in different packages progressed at different rates, reflecting differences in initial levels of bacterial contamination. All samples in the study reached 8 weeks without apparent organoleptic change and samples carried 5.8+/-1.2 log bacteria cm(-2) (mean+/-S.D.). The flora of loins with the odour defect were predominately lactic acid bacteria (LAB) and carnobacteria, but they contained large fractions of Enterobacteriaceae <35 days after packaging. Aeromonas spp. and Shewanella spp. were likely responsible for the sulfide-putrid smell of these spoiled products, but species of Enterobacteriaceae and lactic acid bacteria could have contributed to spoilage. Comparison of microbial groups present in 16 other cuts, half from each of two commercial plants, which were stored for 25 days at -1.5 degrees C, showed that larger fractions of Enterobacteriaceae were present in samples from the plant having difficulty achieving the desired storage life. Additional bacterial samples from 12 cuts supplied by the latter plant obtained after adoption of an acid sanitizer step in the plant cleaning regimen, and also stored for 25 days at -1.5 degrees C, yielded few Enterobacteriaceae, Aeromonas or Shewanella. Use of an acid sanitizer

Selenium semiconductor core optical fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, G. W.; Qian, Q., E-mail: qianqi@scut.edu.cn; Peng, K. L.

2015-02-15

Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Suchmore » crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.« less

BUY CLEAN MANUAL INTERACTIVE CD-ROM

EPA Science Inventory

This interactive CD-ROM contains exercises and opportunities to help users develop a Buy Clean Program for janitorial cleaning products. CD users can learn about Material Safety Data Sheets (MSDS), complete an inventory list, and compare cleaning products to see which have the le...

ASRM process development in aqueous cleaning

NASA Technical Reports Server (NTRS)

Swisher, Bill

1992-01-01

Viewgraphs are included on process development in aqueous cleaning which is taking place at the Aerojet Advanced Solid Rocket Motor (ASRM) Division under a NASA Marshall Space and Flight Center contract for design, development, test, and evaluation of the ASRM including new production facilities. The ASRM will utilize aqueous cleaning in several manufacturing process steps to clean case segments, nozzle metal components, and igniter closures. ASRM manufacturing process development is underway, including agent selection, agent characterization, subscale process optimization, bonding verification, and scale-up validation. Process parameters are currently being tested for optimization utilizing a Taguci Matrix, including agent concentration, cleaning solution temperature, agitation and immersion time, rinse water amount and temperature, and use/non-use of drying air. Based on results of process development testing to date, several observations are offered: aqueous cleaning appears effective for steels and SermeTel-coated metals in ASRM processing; aqueous cleaning agents may stain and/or attack bare aluminum metals to various extents; aqueous cleaning appears unsuitable for thermal sprayed aluminum-coated steel; aqueous cleaning appears to adequately remove a wide range of contaminants from flat metal surfaces, but supplementary assistance may be needed to remove clumps of tenacious contaminants embedded in holes, etc.; and hot rinse water appears to be beneficial to aid in drying of bare steel and retarding oxidation rate.

Food packaging history and innovations.

PubMed

Risch, Sara J

2009-09-23

Food packaging has evolved from simply a container to hold food to something today that can play an active role in food quality. Many packages are still simply containers, but they have properties that have been developed to protect the food. These include barriers to oxygen, moisture, and flavors. Active packaging, or that which plays an active role in food quality, includes some microwave packaging as well as packaging that has absorbers built in to remove oxygen from the atmosphere surrounding the product or to provide antimicrobials to the surface of the food. Packaging has allowed access to many foods year-round that otherwise could not be preserved. It is interesting to note that some packages have actually allowed the creation of new categories in the supermarket. Examples include microwave popcorn and fresh-cut produce, which owe their existence to the unique packaging that has been developed.

EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

NASA Astrophysics Data System (ADS)

Chambers, Scott A.; Gallagher, Bryan

2008-05-01

This focus issue of New Journal of Physics is devoted to the materials science of dilute magnetic semiconductors (DMS). A DMS is traditionally defined as a diamagnetic semiconductor doped with a few to several atomic per cent of some transition metal with unpaired d electrons. Several kinds of dopant-dopant interactions can in principle couple the dopant spins leading to a ferromagnetic ground state in a dilute magnetic system. These include superexchange, which occurs principally in oxides and only between dopants with one intervening oxygen, and double exchange, in which dopants of different formal charges exchange an electron. In both of these mechanisms, the ferromagnetic alignment is not critically dependent on free carriers in the host semiconductor because exchange occurs via bonds. A third mechanism, discovered in the last few years, involves electrons associated with lattice defects that can apparently couple dopant spins. This mechanism is not well understood. Finally, the most desirable mechanism is carrier-mediated exchange interaction in which the dopant spins are coupled by itinerant electrons or holes in the host semiconductor. This mechanism introduces a fundamental link between magnetic and electrical transport properties and offers the possibility of new spintronic functionalities. In particular electrical gate control of ferromagnetism and the use of spin polarized currents to carry signals for analog and digital applications. The spin light emitting diode is a prototypical device of this kind that has been extensively used to characterize the extent of spin polarization in the active light emitting semiconductor heterostructure. The prototypical carrier mediated ferromagnetic DMS is Mn-doped GaAs. This and closely related narrow gap III-V materials have been very extensively studied. Their properties are generally quite well understood and they have led to important insights into fundamental properties of ferromagnetic systems with strong spin

Trends in Food Packaging.

ERIC Educational Resources Information Center

Ott, Dana B.

1988-01-01

This article discusses developments in food packaging, processing, and preservation techniques in terms of packaging materials, technologies, consumer benefits, and current and potential food product applications. Covers implications due to consumer life-style changes, cost-effectiveness of packaging materials, and the ecological impact of…

Active cleaning technique device

NASA Technical Reports Server (NTRS)

Shannon, R. L.; Gillette, R. B.

1973-01-01

The objective of this program was to develop a laboratory demonstration model of an active cleaning technique (ACT) device. The principle of this device is based primarily on the technique for removing contaminants from optical surfaces. This active cleaning technique involves exposing contaminated surfaces to a plasma containing atomic oxygen or combinations of other reactive gases. The ACT device laboratory demonstration model incorporates, in addition to plasma cleaning, the means to operate the device as an ion source for sputtering experiments. The overall ACT device includes a plasma generation tube, an ion accelerator, a gas supply system, a RF power supply and a high voltage dc power supply.

Method of preparing nitrogen containing semiconductor material

DOEpatents

Barber, Greg D.; Kurtz, Sarah R.

2004-09-07

A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

Cleaning process for EUV optical substrates

DOEpatents

Weber, Frank J.; Spiller, Eberhard A.

1999-01-01

A cleaning process for surfaces with very demanding cleanliness requirements, such as extreme-ultraviolet (EUV) optical substrates. Proper cleaning of optical substrates prior to applying reflective coatings thereon is very critical in the fabrication of the reflective optics used in EUV lithographic systems, for example. The cleaning process involves ultrasonic cleaning in acetone, methanol, and a pH neutral soap, such as FL-70, followed by rinsing in de-ionized water and drying with dry filtered nitrogen in conjunction with a spin-rinse.

Ab initio study of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Witczak, Przemysław; Kempisty, Pawel; Strak, Pawel

2015-11-15

Ab initio studies of a GaN(0001)-Ga system with various thicknesses of a metallic Ga layer were undertaken. The studied systems extend from a GaN(0001) surface with a fractional coverage of gallium atoms to a Ga-GaN metal–semiconductor (m–s) contact. Electronic properties of the system are simulated using density functional theory calculations for different doping of the bulk semiconductor. It is shown that during transition from a bare GaN(0001) surface to a m–s heterostructure, the Fermi level stays pinned at a Ga-broken bond highly dispersive surface state to Ga–Ga states at the m–s interface. Adsorption of gallium leads to an energy gainmore » of about 4 eV for a clean GaN(0001) surface and the energy decreases to 3.2 eV for a thickly Ga-covered surface. The transition to the m–s interface is observed. For a thick Ga overlayer such interface corresponds to a Schottky contact with a barrier equal to 0.9 and 0.6 eV for n- and p-type, respectively. Bond polarization-related dipole layer occurring due to an electron transfer to the metal leads to a potential energy jump of 1.5 eV, independent on the semiconductor doping. Additionally high electron density in the Ga–Ga bond region leads to an energy barrier about 1.2 eV high and 4 Å wide. This feature may adversely affect the conductivity of the n-type m–s system.« less

Preparation of a semiconductor thin film

DOEpatents

Pehnt, Martin; Schulz, Douglas L.; Curtis, Calvin J.; Ginley, David S.

1998-01-01

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Low cost, high tech seed cleaning

Treesearch

Robert P. Karrfalt

2013-01-01

Clean seeds are a great asset in native plant restoration. However, seed cleaning equipment is often too costly for many small operations. This paper introduces how several tools and materials intended for other purposes can be used directly or made into simple machines to clean seeds.

Anisotropy-based crystalline oxide-on-semiconductor material

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

2000-01-01

A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

NASA Technical Reports Server (NTRS)

Beheim, Glenn M.

2003-01-01

The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were

Sonochemical cleaning efficiencies in dental instruments

NASA Astrophysics Data System (ADS)

Tiong, T. Joyce; Walmsley, A. Damien; Price, Gareth J.

2012-05-01

Ultrasound has been widely used for cleaning purposes in a variety of situations, including in dental practice. Cleaning is achieved through a combination of acoustically driven streaming effects and sonochemical effects arising from the production of inertial cavitation in a liquid. In our work, various dental instruments used for endodontic (root canal) treatment have been evaluated for their efficiency in producing sonochemical effects in an in-vitro cleaning environment. The areas where cavitation was produced were mapped by monitoring chemiluminescence from luminol solutions and this was correlated with their cleaning efficiencies - assessed by the ability to bleach a dye, to form an emulsion by mixing immiscible components and also to remove ink from a glass surface. The results showed good correlation (Pearson's coefficient > 0.9) between the cavitation and cleaning efficiencies, suggesting that the former plays an important role in cleaning. The methods developed and the results will be beneficial in endodontics research in order to optimise future root canal instruments and treatments.

The Effect of Thickness of ZnO Thin Films on Hydrophobic Self-Cleaning Properties

NASA Astrophysics Data System (ADS)

Mufti, N.; Arista, D.; Diantoro, M.; Fuad, A.; Taufiq, A.; Sunaryono

2017-05-01

Glass coating can be conducted by using ZnO-photocatalyst based semiconductor material since it is preeminent in decomposing organics compound and dangerous bacteria which often contaminates the environment. If there are dirt containing organics compound on the glass, the ZnO photocatalyst coat can be applied as self-cleaning, usually called self-cleaning glass. It depends on the coating thickness which can be controlled by setting the speed of spin coating. In this research, the various rotating speeds of spin coating were conducted at 2000 rpm, 3000 rpm, and 4000 rpm to control the thickness. The raw materials used in this research were Zn(CH3COOH)2.2H2O (PA 99,5%), Ethylene glycol, Diethanolamine (PA 99%), Isopropanol Alkohol, Glycerol, and Ashton. Synthesis methods used were sol-gel prior to spin coating technic were applied. The results of the film were characterized by using SEM, XRD, and UV-Spectrophotometer. The crystal structure was analyzed by using Highscore plus and GSAS software, the size crystal was calculated by using Scherrer equation, a contact angle with ImageJ software. It was shown that ZnO thin film had been successfully synthesized with the crystal size around 21 nm up to 26 nm. The absorption value is higher due to the increasing of coat thickness with bandgap ± 3.2 eV. The test result of hydrophobic and hydrophilic characteristics show that all samples of ZnO thin film with the thickness ± 1.050 μm, ± 0.450 μm, ± 0.250 μm can be applied as self-cleaning glass. The best result was gained with the thickness of thin film ± 1.050 μm.

Nonlinear Optical Interactions in Semiconductors.

DTIC Science & Technology

1985-12-10

Physique du Solide et Energie Solaire We had on-going interaction with Dr. Christian Verie on the growth of high quality narrow-gap semiconductor crystals...The band gap energy of the semiconductor decreases with increasing temperature. Consequently, the absorption of light in the energy region of the...gas and, more importantly, will modulate the electron energy at the difference frequency, wI - 02" Under ordinary circumstances such an energy (or

Nonlinear Optical Interactions in Semiconductors

DTIC Science & Technology

1984-10-01

TACAN Aerospace Corporation. 6 V. Coupling A. C.N.R.S., Physique du Solide et Energie Solaire We have an on-going interaction with Dr. Christian...optical fiber to the semiconductor sample and back to the analyzing electronics. The band-gap energy of the semiconductor decreases with increasing...temperature. Consequently, the absorption of light in the energy region of the band-gap changes with temperature. From the measured light absorption, the

Food Packaging Materials

NASA Technical Reports Server (NTRS)

1978-01-01

The photos show a few of the food products packaged in Alure, a metallized plastic material developed and manufactured by St. Regis Paper Company's Flexible Packaging Division, Dallas, Texas. The material incorporates a metallized film originally developed for space applications. Among the suppliers of the film to St. Regis is King-Seeley Thermos Company, Winchester, Ma'ssachusetts. Initially used by NASA as a signal-bouncing reflective coating for the Echo 1 communications satellite, the film was developed by a company later absorbed by King-Seeley. The metallized film was also used as insulating material for components of a number of other spacecraft. St. Regis developed Alure to meet a multiple packaging material need: good eye appeal, product protection for long periods and the ability to be used successfully on a wide variety of food packaging equipment. When the cost of aluminum foil skyrocketed, packagers sought substitute metallized materials but experiments with a number of them uncovered problems; some were too expensive, some did not adequately protect the product, some were difficult for the machinery to handle. Alure offers a solution. St. Regis created Alure by sandwiching the metallized film between layers of plastics. The resulting laminated metallized material has the superior eye appeal of foil but is less expensive and more easily machined. Alure effectively blocks out light, moisture and oxygen and therefore gives the packaged food long shelf life. A major packaging firm conducted its own tests of the material and confirmed the advantages of machinability and shelf life, adding that it runs faster on machines than materials used in the past and it decreases product waste; the net effect is increased productivity.

78 FR 17229 - Notice of Lodging of Proposed Consent Decree Amendment Under the Clean Air Act; the Clean Water...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-03-20

... Act; the Clean Water Act; the Resource Conservation and Recovery Act; the Missouri Air Conservation Law; the Missouri Clean Water Law and the Missouri Hazardous Waste Management Law On March 14, 2013..., the Missouri Air Conservation Law, the Clean Water Act, the Missouri Clean Water Law, the Resource...

Method for depositing high-quality microcrystalline semiconductor materials

DOEpatents

Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

2011-03-08

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Ultrasonic frequency selection for aqueous fine cleaning

NASA Technical Reports Server (NTRS)

Becker, Joann F.

1995-01-01

A study was conducted to evaluate ultrasonic cleaning systems for precision cleaning effectiveness for oxygen service hardware. This evaluation was specific for Rocketdyne Division of Rockwell Aerospace alloys and machining soils. Machining lubricants and hydraulic fluid were applied as soils to standardized complex test specimens designed to simulate typical hardware. The study consisted of tests which included 20, 25, 30, 40, 50, and 65 kHz ultrasonic cleaning systems. Two size categories of cleaning systems were evaluated, 3- to 10-gal laboratory size tanks and 35- to 320-gal industrial size tanks. The system properties of cavitation, frequency vs. cleaning effectiveness, the two types of transducers, and the power level of the system vs. size of the cleaning tank were investigated. The data obtained from this study was used to select the ultrasonic tanks for the aqueous fine clean facility installed at Rocketdyne.

Ultrasonic frequency selection for aqueous fine cleaning

NASA Technical Reports Server (NTRS)

Becker, Joann F.

1994-01-01

A study was conducted to evaluate ultrasonic cleaning systems for precision cleaning effectiveness for oxygen service hardware. This evaluation was specific for Rocketdyne Div. of Rockwell Aerospace alloys and machining soils. Machining lubricants and hydraulic fluid were applied as soils to standardized complex test specimens designed to simulate typical hardware. The study consisted of tests which included 20, 25, 30, 40, 50, and 65 kHz ultrasonic cleaning systems. Two size categories of cleaning systems were evaluated, 3- to 10-gal laboratory size tanks and 35- to 320-gal industrial size tanks. The system properties of cavitation; frequency vs. cleaning effectiveness; the two types of transducers; and the power level of the system vs. size of the cleaning tank were investigated. The data obtained from this study was used to select the ultrasonic tanks for the aqueous fine clean facility installed at Rocketdyne.

Rudimentary Cleaning Compared to Level 300A

NASA Technical Reports Server (NTRS)

Arpin, Christina Y. Pina; Stoltzfus, Joel

2012-01-01

A study was done to characterize the cleanliness level achievable when using a rudimentary cleaning process, and results were compared to JPR 5322.1G Level 300A. While it is not ideal to clean in a shop environment, some situations (e.g., field combat operations) require oxygen system hardware to be maintained and cleaned to prevent a fire hazard, even though it cannot be sent back to a precision cleaning facility. This study measured the effectiveness of basic shop cleaning. Initially, three items representing parts of an oxygen system were contaminated: a metal plate, valve body, and metal oxygen bottle. The contaminants chosen were those most likely to be introduced to the system during normal use: oil, lubricant, metal shavings/powder, sand, fingerprints, tape, lip balm, and hand lotion. The cleaning process used hot water, soap, various brushes, gaseous nitrogen, water nozzle, plastic trays, scouring pads, and a controlled shop environment. Test subjects were classified into three groups: technical professionals having an appreciation for oxygen hazards; professional precision cleaners; and a group with no previous professional knowledge of oxygen or precision cleaning. Three test subjects were in each group, and each was provided with standard cleaning equipment, a cleaning procedure, and one of each of the three test items to clean. The results indicated that the achievable cleanliness level was independent of the technical knowledge or proficiency of the personnel cleaning the items. Results also showed that achieving a Level 300 particle count was more difficult than achieving a Level A nonvolatile residue amount.

Packaging of electronic modules

NASA Technical Reports Server (NTRS)

Katzin, L.

1966-01-01

Study of design approaches that are taken toward optimizing the packaging of electronic modules with respect to size, shape, component orientation, interconnections, and structural support. The study does not present a solution to specific packaging problems, but rather the factors to be considered to achieve optimum packaging designs.

Washing away your sins in the brain: physical cleaning and priming of cleaning recruit different brain networks after moral threat

PubMed Central

Tang, Honghong; Lu, Xiaping; Su, Rui; Liang, Zilu; Mai, Xiaoqin

2017-01-01

Abstract The association between moral purity and physical cleanliness has been widely discussed recently. Studies found that moral threat initiates the need of physical cleanliness, but actual physical cleaning and priming of cleaning have inconsistent effects on subsequent attitudes and behaviors. Here, we used resting-state functional magnetic resonance imaging to explore the underlying neural mechanism of actual physical cleaning and priming of cleaning. After recalling moral transgression with strong feelings of guilt and shame, participants either actually cleaned their faces with a wipe or were primed with cleanliness through viewing its pictures. Results showed that actual physical cleaning reduced the spontaneous brain activities in the right insula and MPFC, regions that involved in embodied moral emotion processing, while priming of cleaning decreased activities in the right superior frontal gyrus and middle frontal gyrus, regions that participated in executive control processing. Additionally, actual physical cleaning also changed functional connectivity between insula/MPFC and emotion related regions, whereas priming of cleaning modified connectivity within both moral and sensorimotor areas. These findings revealed that actual physical cleaning and priming of cleaning led to changes in different brain regions and networks, providing neural evidence for the inconsistent effects of cleanliness on subsequent attitudes and behaviors. PMID:28338887

Washing away your sins in the brain: physical cleaning and priming of cleaning recruit different brain networks after moral threat.

PubMed

Tang, Honghong; Lu, Xiaping; Su, Rui; Liang, Zilu; Mai, Xiaoqin; Liu, Chao

2017-07-01

The association between moral purity and physical cleanliness has been widely discussed recently. Studies found that moral threat initiates the need of physical cleanliness, but actual physical cleaning and priming of cleaning have inconsistent effects on subsequent attitudes and behaviors. Here, we used resting-state functional magnetic resonance imaging to explore the underlying neural mechanism of actual physical cleaning and priming of cleaning. After recalling moral transgression with strong feelings of guilt and shame, participants either actually cleaned their faces with a wipe or were primed with cleanliness through viewing its pictures. Results showed that actual physical cleaning reduced the spontaneous brain activities in the right insula and MPFC, regions that involved in embodied moral emotion processing, while priming of cleaning decreased activities in the right superior frontal gyrus and middle frontal gyrus, regions that participated in executive control processing. Additionally, actual physical cleaning also changed functional connectivity between insula/MPFC and emotion related regions, whereas priming of cleaning modified connectivity within both moral and sensorimotor areas. These findings revealed that actual physical cleaning and priming of cleaning led to changes in different brain regions and networks, providing neural evidence for the inconsistent effects of cleanliness on subsequent attitudes and behaviors. © The Author (2017). Published by Oxford University Press.

Membrane cleaning with ultrasonically driven bubbles.

PubMed

Reuter, Fabian; Lauterborn, Sonja; Mettin, Robert; Lauterborn, Werner

2017-07-01

A laboratory filtration plant for drinking water treatment is constructed to study the conditions for purely mechanical in situ cleaning of fouled polymeric membranes by the application of ultrasound. The filtration is done by suction of water with defined constant contamination through a membrane module, a stack of five pairs of flat-sheet ultrafiltration membranes. The short cleaning cycle to remove the cake layer from the membranes includes backwashing, the application of ultrasound and air flushing. A special geometry for sound irradiation of the membranes parallel to their surfaces is chosen. Two frequencies, 35kHz and 130kHz, and different driving powers are tested for their cleaning effectiveness. No cleaning is found for 35kHz, whereas good cleaning results are obtained for 130kHz, with an optimum cleaning effectiveness at moderate driving powers. Acoustic and optic measurements in space and time as well as analytical considerations and numerical calculations reveal the reasons and confirm the experimental results. The sound field is measured in high resolution and bubble structures are high-speed imaged on their nucleation sites as well as during their cleaning work at the membrane surface. The microscopic inspection of the membrane surface after cleaning shows distinct cleaning types in the cake layer that are related to specific bubble behaviour on the membrane. The membrane integrity and permeate quality are checked on-line by particle counting and turbidity measurement of the permeate. No signs of membrane damage or irreversible membrane degradation in permeability are detected and an excellent water permeate quality is retained. Copyright © 2017 Elsevier B.V. All rights reserved.

neutron-Induced Failures in semiconductor Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wender, Stephen Arthur

2017-03-13

Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

Preparation of a semiconductor thin film

DOEpatents

Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

1998-01-27

A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Enhanced Chemical Cleaning: A New Process for Chemically Cleaning Savannah River Waste Tanks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ketusky, Edward; Spires, Renee; Davis, Neil

2009-02-11

At the Savannah River Site (SRS) there are 49 High Level Waste (HLW) tanks that eventually must be emptied, cleaned, and closed. The current method of chemically cleaning SRS HLW tanks, commonly referred to as Bulk Oxalic Acid Cleaning (BOAC), requires about a half million liters (130,000 gallons) of 8 weight percent (wt%) oxalic acid to clean a single tank. During the cleaning, the oxalic acid acts as the solvent to digest sludge solids and insoluble salt solids, such that they can be suspended and pumped out of the tank. Because of the volume and concentration of acid used, amore » significant quantity of oxalate is added to the HLW process. This added oxalate significantly impacts downstream processing. In addition to the oxalate, the volume of liquid added competes for the limited available tank space. A search, therefore, was initiated for a new cleaning process. Using TRIZ (Teoriya Resheniya Izobretatelskikh Zadatch or roughly translated as the Theory of Inventive Problem Solving), Chemical Oxidation Reduction Decontamination with Ultraviolet Light (CORD-UV{reg_sign}), a mature technology used in the commercial nuclear power industry was identified as an alternate technology. Similar to BOAC, CORD-UV{reg_sign} also uses oxalic acid as the solvent to dissolve the metal (hydr)oxide solids. CORD-UV{reg_sign} is different, however, since it uses photo-oxidation (via peroxide/UV or ozone/UV to form hydroxyl radicals) to decompose the spent oxalate into carbon dioxide and water. Since the oxalate is decomposed and off-gassed, CORD-UV{reg_sign} would not have the negative downstream oxalate process impacts of BOAC. With the oxalate destruction occurring physically outside the HLW tank, re-precipitation and transfer of the solids, as well as regeneration of the cleaning solution can be performed without adding additional solids, or a significant volume of liquid to the process. With a draft of the pre-conceptual Enhanced Chemical Cleaning (ECC) flowsheet, taking

Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures

PubMed Central

Sang, Liwen; Hu, Junqing; Zou, Rujia; Koide, Yasuo; Liao, Meiyong

2013-01-01

The typical photodetectors can only detect one specific optical spectral band, such as InGaAs and graphene-PbS quantum dots for near-infrared (NIR) light detection, CdS and Si for visible light detection, and ZnO and III-nitrides for UV light detection. So far, none of the developed photodetector can achieve the multicolor detection with arbitrary spectral selectivity, high sensitivity, high speed, high signal-to-noise ratio, high stability, and simplicity (called 6S requirements). Here, we propose a universal strategy to develop multicolor photodetectors with arbitrary spectral selectivity by integrating various semiconductor nanostructures on a wide-bandgap semiconductor or an insulator substrate. Because the photoresponse of each spectral band is determined by each semiconductor nanostructure or the semiconductor substrate, multicolor detection satisfying 6S requirements can be readily satisfied by selecting the right semiconductors. PMID:23917790

Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors

PubMed Central

Jin Lee, Su; Kim, Yong-Jae; Young Yeo, So; Lee, Eunji; Sun Lim, Ho; Kim, Min; Song, Yong-Won; Cho, Jinhan; Ah Lim, Jung

2015-01-01

Here we report the first demonstration for centro-apical self-organization of organic semiconductors in a line-printed organic semiconductor: polymer blend. Key feature of this work is that organic semiconductor molecules were vertically segregated on top of the polymer phase and simultaneously crystallized at the center of the printed line pattern after solvent evaporation without an additive process. The thickness and width of the centro-apically segregated organic semiconductor crystalline stripe in the printed blend pattern were controlled by varying the relative content of the organic semiconductors, printing speed, and solution concentrations. The centro-apical self-organization of organic semiconductor molecules in a printed polymer blend may be attributed to the combination of an energetically favorable vertical phase-separation and hydrodynamic fluids inside the droplet during solvent evaporation. Finally, a centro-apically phase-separated bilayer structure of organic semiconductor: polymer blend was successfully demonstrated as a facile method to form the semiconductor and dielectric layer for OFETs in one- step. PMID:26359068

Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors.

PubMed

Lee, Su Jin; Kim, Yong-Jae; Yeo, So Young; Lee, Eunji; Lim, Ho Sun; Kim, Min; Song, Yong-Won; Cho, Jinhan; Lim, Jung Ah

2015-09-11

Here we report the first demonstration for centro-apical self-organization of organic semiconductors in a line-printed organic semiconductor: polymer blend. Key feature of this work is that organic semiconductor molecules were vertically segregated on top of the polymer phase and simultaneously crystallized at the center of the printed line pattern after solvent evaporation without an additive process. The thickness and width of the centro-apically segregated organic semiconductor crystalline stripe in the printed blend pattern were controlled by varying the relative content of the organic semiconductors, printing speed, and solution concentrations. The centro-apical self-organization of organic semiconductor molecules in a printed polymer blend may be attributed to the combination of an energetically favorable vertical phase-separation and hydrodynamic fluids inside the droplet during solvent evaporation. Finally, a centro-apically phase-separated bilayer structure of organic semiconductor: polymer blend was successfully demonstrated as a facile method to form the semiconductor and dielectric layer for OFETs in one- step.

49 CFR 174.615 - Cleaning cars.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 2 2012-10-01 2012-10-01 false Cleaning cars. 174.615 Section 174.615... Requirements for Division 6.1 (Poisonous) Materials § 174.615 Cleaning cars. (a) [Reserved] (b) After Division 6.1 (poisonous) materials are unloaded from a rail car, that car must be thoroughly cleaned unless...

49 CFR 174.615 - Cleaning cars.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 2 2013-10-01 2013-10-01 false Cleaning cars. 174.615 Section 174.615... Requirements for Division 6.1 (Poisonous) Materials § 174.615 Cleaning cars. (a) [Reserved] (b) After Division 6.1 (poisonous) materials are unloaded from a rail car, that car must be thoroughly cleaned unless...

49 CFR 174.615 - Cleaning cars.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 2 2011-10-01 2011-10-01 false Cleaning cars. 174.615 Section 174.615... Requirements for Division 6.1 (Poisonous) Materials § 174.615 Cleaning cars. (a) [Reserved] (b) After Division 6.1 (poisonous) materials are unloaded from a rail car, that car must be thoroughly cleaned unless...

49 CFR 174.615 - Cleaning cars.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 2 2014-10-01 2014-10-01 false Cleaning cars. 174.615 Section 174.615... Requirements for Division 6.1 (Poisonous) Materials § 174.615 Cleaning cars. (a) [Reserved] (b) After Division 6.1 (poisonous) materials are unloaded from a rail car, that car must be thoroughly cleaned unless...

49 CFR 174.615 - Cleaning cars.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 2 2010-10-01 2010-10-01 false Cleaning cars. 174.615 Section 174.615... Requirements for Division 6.1 (Poisonous) Materials § 174.615 Cleaning cars. (a) [Reserved] (b) After Division 6.1 (poisonous) materials are unloaded from a rail car, that car must be thoroughly cleaned unless...

Effectuality of Cleaning Workers' Training and Cleaning Enterprises' Chemical Health Hazard Risk Profiling.

PubMed

Suleiman, Abdulqadir M; Svendsen, Kristin V H

2015-12-01

Goal-oriented communication of risk of hazards is necessary in order to reduce risk of workers' exposure to chemicals. Adequate training of workers and enterprise priority setting are essential elements. Cleaning enterprises have many challenges and the existing paradigms influence the risk levels of these enterprises. Information on organization and enterprises' prioritization in training programs was gathered from cleaning enterprises. A measure of enterprises' conceptual level of importance of chemical health hazards and a model for working out the risk index (RI) indicating enterprises' conceptual risk level was established and used to categorize the enterprises. In 72.3% of cases, training takes place concurrently with task performances and in 67.4% experienced workers conduct the trainings. There is disparity between employers' opinion on competence level of the workers and reality. Lower conceptual level of importance was observed for cleaning enterprises of different sizes compared with regional safety delegates and occupational hygienists. Risk index values show no difference in risk level between small and large enterprises. Training of cleaning workers lacks the prerequisite for suitability and effectiveness to counter risks of chemical health hazards. There is dereliction of duty by management in the sector resulting in a lack of competence among the cleaning workers. Instituting acceptable easily attainable safety competence level for cleaners will conduce to risk reduction, and enforcement of attainment of the competence level would be a positive step.

High mobility emissive organic semiconductor

PubMed Central

Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

2015-01-01

The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

Super Clean, Super Safe

NASA Technical Reports Server (NTRS)

2002-01-01

The Supersonic Gas/Liquid Cleaning System (SS-GLCS) has applications ranging from cleaning circuit boards to scouring building exteriors. The system does not abrade the surface of the hardware being cleaned, and it requires much lower levels of pressure while using very little water. An alternative to CFC-based solvents, the system mixes air and water from separate pressurized tanks, ejecting the gas- liquid mixture at supersonic speeds from a series of nozzles at the end of a hand-held wand. The water droplets have the kinetic energy to forcibly remove the contaminant material. The system leaves very little fluid that must be handled as contaminated waste. It can be applied in the aerospace, automotive, and medical industries, as well as to circuit boards, electronics, machinery, metals, plastics, and optics. With a nozzle that can be oriented in any direction, the system is adjustable to allow all sides of a part to be cleaned without reorientation. It requires minimal training and is easily moved on built-in casters

Graded core/shell semiconductor nanorods and nanorod barcodes

DOEpatents

Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

2010-12-14

Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

Graded core/shell semiconductor nanorods and nanorod barcodes

DOEpatents

Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

2013-03-26

Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

Deformable inorganic semiconductor

NASA Astrophysics Data System (ADS)

Kim, Dae-Hyeong; Cha, Gi Doo

2018-05-01

Unlike conventional inorganic semiconductors, which are typically brittle, α-Ag2S exhibits room-temperature ductility with favourable electrical properties, offering promise for use in high-performance flexible and stretchable devices.

Modular assembly of chimeric phi29 packaging RNAs that support DNA packaging.

PubMed

Fang, Yun; Shu, Dan; Xiao, Feng; Guo, Peixuan; Qin, Peter Z

2008-08-08

The bacteriophage phi29 DNA packaging motor is a protein/RNA complex that can produce strong force to condense the linear-double-stranded DNA genome into a pre-formed protein capsid. The RNA component, called the packaging RNA (pRNA), utilizes magnesium-dependent inter-molecular base-pairing interactions to form ring-shaped complexes. The pRNA is a class of non-coding RNA, interacting with phi29 motor proteins to enable DNA packaging. Here, we report a two-piece chimeric pRNA construct that is fully competent in interacting with partner pRNA to form ring-shaped complexes, in packaging DNA via the motor, and in assembling infectious phi29 virions in vitro. This is the first example of a fully functional pRNA assembled using two non-covalently interacting fragments. The results support the notion of modular pRNA architecture in the phi29 packaging motor.

Modular assembly of chimeric phi29 packaging RNAs that support DNA packaging

PubMed Central

Fang, Yun; Shu, Dan; Xiao, Feng; Guo, Peixuan; Qin, Peter Z.

2008-01-01

The bacteriophage phi29 DNA packaging motor is a protein/RNA complex that can produce strong force to condense the linear-double stranded DNA genome into a pre-formed protein capsid. The RNA component, called the packaging RNA (pRNA), utilizes magnesium-dependent intermolecular base-pairing interactions to form ring-shaped complexes. The pRNA is a class of non-coding RNA, interacting with phi29 motor proteins to enable DNA packaging. Here, we report a 2-piece chimeric pRNA construct that is fully competent in interacting with partner pRNA to form ring-shaped complexes, in packaging DNA via the motor, and in assembling infectious phi29 virions in vitro. This is the first example of a fully functional pRNA assembled using two non-covalently interacting fragments. The results support the notion of modular pRNA architecture in the phi29 packaging motor. PMID:18514064

Aging of clean foams

NASA Astrophysics Data System (ADS)

Weon, Byung Mook; Stewart, Peter S.

2014-11-01

Aging is an inevitable process in living systems. Here we show how clean foams age with time through sequential coalescence events: in particular, foam aging resembles biological aging. We measure population dynamics of bubbles in clean foams through numerical simulations with a bubble network model. We demonstrate that death rates of individual bubbles increase exponentially with time, independent on initial conditions, which is consistent with the Gompertz mortality law as usually found in biological aging. This consistency suggests that clean foams as far-from-equilibrium dissipative systems are useful to explore biological aging. This work (NRF-2013R1A22A04008115) was supported by Mid-career Researcher Program through NRF grant funded by the MEST.

Clean Energy Manufacturing Analysis Center (CEMAC)

DOE Office of Scientific and Technical Information (OSTI.GOV)

2015-12-01

The U.S. Department of Energy's Clean Energy Manufacturing Analysis Center (CEMAC) provides objective analysis and up-to-date data on global supply chains and manufacturing of clean energy technologies. Policymakers and industry leaders seek CEMAC insights to inform choices to promote economic growth and the transition to a clean energy economy.

Nonlinear Optical Interactions in Semiconductors

DTIC Science & Technology

1984-03-16

aU internal audits for TACAN Corporation. 7 V. Coupling A, C. N. R. S., Physique du Solide et Energie Solaire We have an ongoing interaction with Dr...fiber to the semiconductor sample and back to the analyzing electronics. The band gap energy of the semiconductor decreases with increasing tem- perature...Consequently, the absorption of light in the energy region of the band gap changes with temperature. From the measured light absorp- tion, the

Large-area, laterally-grown epitaxial semiconductor layers

DOEpatents

Han, Jung; Song, Jie; Chen, Danti

2017-07-18

Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

Residual tetrachloroethylene in dry-cleaned clothes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawauchi, T.; Nishiyama, K.

1989-04-01

A large amount of residual tetrachloroethylene (TCE), up to 13.6 mg/g, was found in dry-cleaned clothes. The amounts varied among dry-cleaning establishments as well as with the type of fiber. The causes of these variations are discussed. Air TCE concentrations in the closed environment of dry-cleaning outlets were elevated: the highest reading was 4.8 mg/m3. The expired air of outlet employees also showed an increased level of TCE (average, 36.9 micrograms/m3). Increased air contamination from TCE released from dry-cleaned clothes was also observed in the home of a consumer. To reduce environmental contamination from TCE released from any of thesemore » sources, the amount of residual TCE in dry-cleaned clothes should be minimized.« less

Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

NASA Astrophysics Data System (ADS)

Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

2017-08-01

Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

Risk in cleaning: chemical and physical exposure.

PubMed

Wolkoff, P; Schneider, T; Kildesø, J; Degerth, R; Jaroszewski, M; Schunk, H

1998-04-23

Cleaning is a large enterprise involving a large fraction of the workforce worldwide. A broad spectrum of cleaning agents has been developed to facilitate dust and dirt removal, for disinfection and surface maintenance. The cleaning agents are used in large quantities throughout the world. Although a complex pattern of exposure to cleaning agents and resulting health problems, such as allergies and asthma, are reported among cleaners, only a few surveys of this type of product have been performed. This paper gives a broad introduction to cleaning agents and the impact of cleaning on cleaners, occupants of indoor environments, and the quality of cleaning. Cleaning agents are usually grouped into different product categories according to their technical functions and the purpose of their use (e.g. disinfectants and surface care products). The paper also indicates the adverse health and comfort effects associated with the use of these agents in connection with the cleaning process. The paper identifies disinfectants as the most hazardous group of cleaning agents. Cleaning agents contain evaporative and non-evaporative substances. The major toxicologically significant constituents of the former are volatile organic compounds (VOCs), defined as substances with boiling points in the range of 0 degree C to about 400 degrees C. Although laboratory emission testing has shown many VOCs with quite different time-concentration profiles, few field studies have been carried out measuring the exposure of cleaners. However, both field studies and emission testing indicate that the use of cleaning agents results in a temporal increase in the overall VOC level. This increase may occur during the cleaning process and thus it can enhance the probability of increased short-term exposure of the cleaners. However, the increased levels can also be present after the cleaning and result in an overall increased VOC level that can possibly affect the indoor air quality (IAQ) perceived by

Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications

PubMed Central

Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing

2017-01-01

Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided. PMID:28788080

Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications.

PubMed

Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing

2017-07-28

Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

Semiconductor surface protection material

NASA Technical Reports Server (NTRS)

Packard, R. D. (Inventor)

1973-01-01

A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

Comparative Packaging Study

NASA Technical Reports Server (NTRS)

Perchonok, Michele H.; Oziomek, Thomas V.

2009-01-01

Future long duration manned space flights beyond low earth orbit will require the food system to remain safe, acceptable and nutritious. Development of high barrier food packaging will enable this requirement by preventing the ingress and egress of gases and moisture. New high barrier food packaging materials have been identified through a trade study. Practical application of this packaging material within a shelf life test will allow for better determination of whether this material will allow the food system to meet given requirements after the package has undergone processing. The reason to conduct shelf life testing, using a variety of packaging materials, stems from the need to preserve food used for mission durations of several years. Chemical reactions that take place during longer durations may decrease food quality to a point where crew physical or psychological well-being is compromised. This can result in a reduction or loss of mission success. The rate of chemical reactions, including oxidative rancidity and staling, can be controlled by limiting the reactants, reducing the amount of energy available to drive the reaction, and minimizing the amount of water available. Water not only acts as a media for microbial growth, but also as a reactant and means by which two reactants may come into contact with each other. The objective of this study is to evaluate three packaging materials for potential use in long duration space exploration missions.

A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

NASA Astrophysics Data System (ADS)

Liu, Wenjian; Zhang, Hongxia; Shi, Jin-An; Wang, Zhongchang; Song, Cheng; Wang, Xiangrong; Lu, Siyuan; Zhou, Xiangjun; Gu, Lin; Louzguine-Luzgin, Dmitri V.; Chen, Mingwei; Yao, Kefu; Chen, Na

2016-12-01

Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p-n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V-1 s-1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.

A room-temperature magnetic semiconductor from a ferromagnetic metallic glass.

PubMed

Liu, Wenjian; Zhang, Hongxia; Shi, Jin-An; Wang, Zhongchang; Song, Cheng; Wang, Xiangrong; Lu, Siyuan; Zhou, Xiangjun; Gu, Lin; Louzguine-Luzgin, Dmitri V; Chen, Mingwei; Yao, Kefu; Chen, Na

2016-12-08

Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co 28.6 Fe 12.4 Ta 4.3 B 8.7 O 46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p-n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm 2  V -1  s -1 . Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.

A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

PubMed Central

Liu, Wenjian; Zhang, Hongxia; Shi, Jin-an; Wang, Zhongchang; Song, Cheng; Wang, Xiangrong; Lu, Siyuan; Zhou, Xiangjun; Gu, Lin; Louzguine-Luzgin, Dmitri V.; Chen, Mingwei; Yao, Kefu; Chen, Na

2016-01-01

Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III–V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p–n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V−1 s−1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities. PMID:27929059

Where the chips fall: environmental health in the semiconductor industry.

PubMed

Chepesiuk, R

1999-09-01

Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment.

Where the chips fall: environmental health in the semiconductor industry.

PubMed Central

Chepesiuk, R

1999-01-01

Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment. PMID:10464084

Clean Energy Manufacturing Boosting U.S. Competitiveness

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2015-09-14

Clean energy manufacturing is booming in the United States. U.S. clean energy investment topped $51 billion in 2014 alone, and even more growth is expected in the $250 billion clean energy market worldwide in coming years. America has an important opportunity to continue growing clean energy manufacturing industries, along with the high quality jobs and stronger local economies that come with them.

Clean Energy Manufacturing Boosting U.S. Competitiveness

ScienceCinema

None

2018-06-06

Clean energy manufacturing is booming in the United States. U.S. clean energy investment topped $51 billion in 2014 alone, and even more growth is expected in the $250 billion clean energy market worldwide in coming years. America has an important opportunity to continue growing clean energy manufacturing industries, along with the high quality jobs and stronger local economies that come with them.

The cleaning of ward floors and the bacteriological study of floor-cleaning machines

PubMed Central

Bate, J. G.

1961-01-01

Current trends in ward flooring materials and cleaning methods are considered from the point of view of the hospital bacteriologist. Methods employed in an investigation into the bacteriological safety of a number of floor-cleaning machines are described, and some considerations governing the choice of vacuum cleaners for ward use are discussed. Images PMID:13687726

Graded core/shell semiconductor nanorods and nanorod barcodes

DOEpatents

Alivisatos, A Paul [Oakland, CA; Scher, Erik C [San Francisco, CA; Manna, Liberato [Palo Del Collie, IT

2009-05-19

Disclosed herein is a graded core/shell semiconductor nanorod having at least a first segment of a core of a Group II-VI, Group III-V or a Group IV semiconductor, a graded shell overlying the core, wherein the graded shell comprises at least two monolayers, wherein the at least two monolayers each independently comprise a Group II-VI, Group III-V or a Group IV semiconductor.

Creative Thinking Package

ERIC Educational Resources Information Center

Jones, Clive

1972-01-01

A look at the latest package from a British managment training organization, which explains and demonstrates creative thinking techniques, including brainstorming. The package, designed for groups of twelve or more, consists of tapes, visuals, and associated exercises. (Editor/JB)

Comparative Packaging Study

NASA Technical Reports Server (NTRS)

Perchonok, Michele; Antonini, David

2008-01-01

This viewgraph presentation describes a comparative packaging study for use on long duration space missions. The topics include: 1) Purpose; 2) Deliverables; 3) Food Sample Selection; 4) Experimental Design Matrix; 5) Permeation Rate Comparison; and 6) Packaging Material Information.

Wavelength-resonant surface-emitting semiconductor laser

DOEpatents

Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

1989-01-01

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

19 CFR 191.13 - Packaging materials.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 19 Customs Duties 2 2010-04-01 2010-04-01 false Packaging materials. 191.13 Section 191.13 Customs... (CONTINUED) DRAWBACK General Provisions § 191.13 Packaging materials. (a) Imported packaging material... packaging material when used to package or repackage merchandise or articles exported or destroyed pursuant...

Warpage of QFN Package in Post Mold Cure Process of integrated circuit packaging

NASA Astrophysics Data System (ADS)

Sriwithoon, Nattha; Ugsornrat, Kessararat; Srisuwitthanon, Warayoot; Thonglor, Panakamon

2017-09-01

This research studied about warpage of QFN package in post mold cure process of integrated circuit (IC) packages using pre-plated (PPF) leadframe. For IC package, epoxy molding compound (EMC) are molded by cross linking of compound stiffness but incomplete crosslinked network and leading the fully cured thermoset by post mold cure (PMC) process. The cure temperature of PMC can change microstructure of EMC in term of stress inside the package and effect to warpage of the package due to coefficient of thermal expansion (CTE) between EMC and leadframe. In experiment, cure temperatures were varied to check the effect of internal stress due to different cure temperature after completed post mold cure for TDFN 2×3 8L. The cure temperature were varied with 180 °C, 170 °C, 160 °C, and 150°C with cure time 4 and 6 hours, respectively. For analysis, the TDFN 2×3 8L packages were analyzed the warpage by thickness gauge and scanning acoustic microscope (SAM) after take the test samples out from the oven cure. The results confirmed that effect of different CTE between EMC and leadframe due to different cure temperature resulting to warpage of the TDFN 2×3 8L packages.

Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Caillat, Thierry F. (Inventor); Borshchevsky, Alexander (Inventor)

1998-01-01

Transition metals of Group VIII (Co, Rh and Ir) have been prepared as semiconductor compounds with the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freezing techniques and/or liquid phase sintering techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 1200 cm.sup.2.V.sup.-1.s.sup.-1) and good Seebeck coefficients (up to 150 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a substantial increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.