Science.gov

Sample records for cmos current sources

  1. Current-mode CMOS hybrid image sensor

    NASA Astrophysics Data System (ADS)

    Benyhesan, Mohammad Kassim

    Digital imaging is growing rapidly making Complimentary Metal-Oxide-Semi conductor (CMOS) image sensor-based cameras indispensable in many modern life devices like cell phones, surveillance devices, personal computers, and tablets. For various purposes wireless portable image systems are widely deployed in many indoor and outdoor places such as hospitals, urban areas, streets, highways, forests, mountains, and towers. However, the increased demand on high-resolution image sensors and improved processing features is expected to increase the power consumption of the CMOS sensor-based camera systems. Increased power consumption translates into a reduced battery life-time. The increased power consumption might not be a problem if there is access to a nearby charging station. On the other hand, the problem arises if the image sensor is located in widely spread areas, unfavorable to human intervention, and difficult to reach. Given the limitation of energy sources available for wireless CMOS image sensor, an energy harvesting technique presents a viable solution to extend the sensor life-time. Energy can be harvested from the sun light or the artificial light surrounding the sensor itself. In this thesis, we propose a current-mode CMOS hybrid image sensor capable of energy harvesting and image capture. The proposed sensor is based on a hybrid pixel that can be programmed to perform the task of an image sensor and the task of a solar cell to harvest energy. The basic idea is to design a pixel that can be configured to exploit its internal photodiode to perform two functions: image sensing and energy harvesting. As a proof of concept a 40 x 40 array of hybrid pixels has been designed and fabricated in a standard 0.5 microm CMOS process. Measurement results show that up to 39 microW of power can be harvested from the array under 130 Klux condition with an energy efficiency of 220 nJ /pixel /frame. The proposed image sensor is a current-mode image sensor which has several

  2. Lower-Dark-Current, Higher-Blue-Response CMOS Imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata; Cunningham, Thomas; Hancock, Bruce

    2008-01-01

    Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated-circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal-handling capacities, relative to those of prior CMOS imagers. The main conclusion that can be drawn from a study of the causes of dark currents in prior CMOS imagers is that dark currents could be reduced by relocating p/n junctions away from Si/SiO2 interfaces. In addition to reflecting this conclusion, the improved designs include several other features to counteract dark-current mechanisms and enhance performance.

  3. A new architecture of current-mode CMOS TDI Sensor

    NASA Astrophysics Data System (ADS)

    Ji, Cheng; Chen, Yongping

    2015-10-01

    Nowadays, CMOS sensors still suffer from the problem of low SNR, especially in the stage of low illumination and high relative scanning velocity. Lots of methods have been develop to overcome this problem. Among these researches, TDI (Time Delay Integration) architecture is a more natural choice, which is natively supported by CCD sensors. In this paper a new kind of proposed current-mode sensor is used to achieve TDI operation in analog domain. The circuit is composed of three main parts. At first, a current-type pixel is proposed, in which the active MOSFET is operated in the triode region to ensure the output current is linearly dependent on the gate voltage and avoid the reduction of threshold voltage in the traditional voltage mode pixels, such as 3T, 4T which use the source followers as its active part. Then a discrete double sampling (DDS) unit, which is operated in the form of currents is used to efficiently reduce the fixed pattern noise (FPN) and make the output is independent of reset voltage of pixels. For accumulation, an improved current mirror adder under controlled of timing circuits is proposed to overcome the problem of saturation suffered in voltage domain. Some main noise sources, especially come from analog sample and holds capacitors and switches is analyzed. Finally, simulation results with CSMC 0.5um technology and Cadence IC show that the proposed method is reasonable and efficient to improve the SNR.

  4. A new circuit technique for reduced leakage current in Deep Submicron CMOS technologies

    NASA Astrophysics Data System (ADS)

    Schmitz, A.; Tielert, R.

    2005-05-01

    Modern CMOS processes in the Deep Submicron regime are restricted to supply voltages below 2 volts and further to account for the transistors' field strength limitations and to reduce the power per logic gate. To maintain the high switching performance, the threshold voltage must be scaled according with the supply voltage. However, this leads to an increased subthreshold current of the transistors in standby mode (VGS=0). Another source of leakage is gate current, which becomes significant for gate oxides of 3nm and below. We propose a Self-Biasing Virtual Rails (SBVR) - CMOS technique which acts like an adaptive local supply voltage in case of standby mode. Most important sources of leakage currents are reduced by this technique. Moreover, SBVR-CMOS is capable of conserving stored information in sleep mode, which is vital for memory circuits. Memories are exposed to radiation causing soft errors. This well-known problem becomes even worse in standby mode of typical SRAMs, that have low driving performance to withstand alpha particle hits. In this paper, a 16-transistor SRAM cell is proposed, which combines the advantage of extremely low leakage currents with a very high soft error stability.

  5. A compact picosecond pulsed laser source using a fully integrated CMOS driver circuit

    NASA Astrophysics Data System (ADS)

    He, Yuting; Li, Yuhua; Yadid-Pecht, Orly

    2016-03-01

    Picosecond pulsed laser source have applications in areas such as optical communications, biomedical imaging and supercontinuum generation. Direct modulation of a laser diode with ultrashort current pulses offers a compact and efficient approach to generate picosecond laser pulses. A fully integrated complementary metaloxide- semiconductor (CMOS) driver circuit is designed and applied to operate a 4 GHz distributed feedback laser (DFB). The CMOS driver circuit combines sub-circuits including a voltage-controlled ring oscillator, a voltagecontrolled delay line, an exclusive-or (XOR) circuit and a current source circuit. Ultrashort current pulses are generated by the XOR circuit when the delayed square wave is XOR'ed with the original square wave from the on-chip oscillator. Circuit post-layout simulation shows that output current pulses injected into an equivalent circuit load of the laser have a pulse full width at half maximum (FWHM) of 200 ps, a peak current of 80 mA and a repetition rate of 5.8 MHz. This driver circuit is designed in a 0.13 μm CMOS process and taped out on a 0.3 mm2 chip area. This CMOS chip is packaged and interconnected with the laser diode on a printed circuit board (PCB). The optical output waveform from the laser source is captured by a 5 GHz bandwidth photodiode and an 8 GHz bandwidth oscilloscope. Measured results show that the proposed laser source can output light pulses with a pulse FWHM of 151 ps, a peak power of 6.4 mW (55 mA laser peak forward current) and a repetition rate of 5.3 MHz.

  6. Novel source follower transistor structure without lightly doped drain for high performance CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Song, Hyeong-Sub; Kwon, Sung-Kyu; Jeon, So-Ra; Oh, Dong-Jun; Lee, Ga-Won; Lee, Hi-Deok

    2016-08-01

    To realize high-resolution pixels in the CMOS image sensor, it is necessary to reduce low-frequency noise, particularly random telegraph signal (RTS) noise of the source-follower transistor (SFT). To achieve less relative variation of drain noise current, ΔI D/I D, a metal–oxide–semiconductor field-effect transistor structure without the lightly doped drain (LDD) for the SFT transistor is proposed. Then, a comparison of RTS noise characteristics between the proposed SFT structure without LDD and the conventional SFT structure with LDD was conducted. Although the RTS noise occurrence probability of the proposed SFT structure without LDD is somewhat greater than that of the conventional SFT structure with LDD, the amplitude of relative variation of drain noise current of the proposed SFT structure is significantly less than that of the conventional SFT. Despite changes in several factors in the proposed SFT, such as effective channel length, trap depth profile in gate oxide, and random dopant fluctuation (RDF), it is believed that the change of trap depth profile is a primary factor for the improved RTS characteristic. Therefore, the proposed SFT is highly desirable for the high-resolution CMOS image sensor.

  7. Voltage controlled current source

    DOEpatents

    Casne, Gregory M.

    1992-01-01

    A seven decade, voltage controlled current source is described for use in testing intermediate range nuclear instruments that covers the entire test current range of from 10 picoamperes to 100 microamperes. High accuracy is obtained throughout the entire seven decades of output current with circuitry that includes a coordinated switching scheme responsive to the input signal from a hybrid computer to control the input voltage to an antilog amplifier, and to selectively connect a resistance to the antilog amplifier output to provide a continuous output current source as a function of a preset range of input voltage. An operator controlled switch provides current adjustment for operation in either a real-time simulation test mode or a time response test mode.

  8. The effects of transistor source-to-gate bridging faults in complex CMOS gates

    NASA Astrophysics Data System (ADS)

    Visweswaran, G. S.; Ali, Akhtar-Uz-Zaman M.; Lala, Parag K.; Hartmann, Carlos R. P.

    1991-06-01

    A study of the effect of gate-to-source bridging faults in the pull-up section of a complex CMOS gate is presented. The manifestation of these faults depends on the resistance value of the connection causing the bridging. It is shown that such faults manifest themselves either as stuck-at or stuck-open faults and can be detected by tests for stuck-at and stuck-open faults generated for the equivalent logic current. It is observed that for transistor channel lengths larger than 1 microns there exists a range of values of the bridging resistance for which the fault behaves as a pseudo-stuck-open fault.

  9. A novel pixel design with hybrid type isolation scheme for low dark current in CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Choi, Sung Ho; Kim, Yi Tae; Oh, Min Seok; Park, Young Hwan; Cho, Jeong Jin; Jang, Young Heub; Han, Hyung Jun; Choi, Jong Won; Park, Ho Woo; Jung, Sang Il; Oh, Hoon Sang; Ahn, Jung Chak; Goto, Hiroshige; Choi, Chi Young; Roh, Yonghan

    2013-02-01

    New isolation scheme for CMOS image sensor pixel is proposed and its improved dark current performance is reported. It is well known that shallow trench isolation (STI) is one of major sources of dark current in imager pixel due to the existence of interfacial defects at STI/Si interface. On the account STI-free structure over the whole pixel area was previously reported for reducing dark current. As the size of pixel pitch is shrunk, however, it becomes increasingly difficult to isolate in-pixel transistors electrically without STI. In this work, we implemented hybrid type isolation scheme of removing STI around photodiode to suppress the dark current and remaining STI near transistors to guarantee the electrical isolation of transistors in pixel. It was successfully achieved that the dark current was significantly reduced by removing the STI around the photodiode together with normal operation of in-pixel transistors.

  10. Analysis of Error Sources in On-Wafer Noise Characterization of RF CMOS Transistors

    SciTech Connect

    Wiatr, Wojciech

    2005-08-25

    This paper analyzes how erroneous source impedance measurement due to residual errors within a VNA affect the four-noise parameter determination based on the cold-source noise measurement procedure and the eight-term linear model. It shows that although the errors disturb the complex noise characterization of a CMOS transistor at RF, mismatch and finite bandwidth errors seem to be more significant.

  11. High-power CMOS current driver with accurate transconductance for electrical impedance tomography.

    PubMed

    Constantinou, Loucas; Triantis, Iasonas F; Bayford, Richard; Demosthenous, Andreas

    2014-08-01

    Current drivers are fundamental circuits in bioimpedance measurements including electrical impedance tomography (EIT). In the case of EIT, the current driver is required to have a large output impedance to guarantee high current accuracy over a wide range of load impedance values. This paper presents an integrated current driver which meets these requirements and is capable of delivering large sinusoidal currents to the load. The current driver employs a differential architecture and negative feedback, the latter allowing the output current to be accurately set by the ratio of the input voltage to a resistor value. The circuit was fabricated in a 0.6- μm high-voltage CMOS process technology and its core occupies a silicon area of 0.64 mm (2) . It operates from a ± 9 V power supply and can deliver output currents up to 5 mA p-p. The accuracy of the maximum output current is within 0.41% up to 500 kHz, reducing to 0.47% at 1 MHz with a total harmonic distortion of 0.69%. The output impedance is 665 k Ω at 100 kHz and 372 k Ω at 500 kHz. PMID:25073130

  12. A uniform phase noise QVCO with a feedback current source

    NASA Astrophysics Data System (ADS)

    Chunyuan, Zhou; Lei, Zhang; He, Qian

    2012-07-01

    A novel integrated quadrature voltage controlled oscillator (QVCO) with a feedback current source is presented in this paper. Benefiting from the current adjusting function of the feedback current source, the proposed QVCO exhibits a uniform phase noise over the entire tuning range. This QVCO is implemented in 65-nm CMOS technology. The measurement results show that it draws less than 3-mA average current from a 1.2-V supply and the phase noise is less than -110 dBc/Hz @1MHz offset over the entire tuning range. The fluctuation of phase noise @1MHz offset from the center frequency of 2.84-GHz to 3.27-GHz is less than 1 dBc/Hz, which validates the correctness of the proposed current source feedback technique.

  13. Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems

    DOEpatents

    Welch, James D.

    2003-09-23

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of applied gate voltage field induced carriers in essentially intrinsic, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at substantially equal doping levels, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at different doping levels, and containing a single metallurgical doping type, and functional combinations thereof. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents utilizing material(s) which form rectifying junctions with both N and P-type semiconductor whether metallurigically or field induced.

  14. Investigations on CMOS photodiodes using scanning electron microscopy with electron beam induced current measurements

    NASA Astrophysics Data System (ADS)

    Kraxner, A.; Roger, F.; Loeffler, B.; Faccinelli, M.; Kirnstoetter, S.; Minixhofer, R.; Hadley, P.

    2014-09-01

    In this work the characterization of CMOS diodes with Electron Beam Induced Current (EBIC) measurements in a Scanning Electron Microscope (SEM) are presented. Three-dimensional Technology Computer Aided Design (TCAD) simulations of the EBIC measurement were performed for the first time to help interpret the experimental results. The TCAD simulations provide direct access to the spatial distribution of physical quantities (like mobility, lifetime etc.) which are very difficult to obtain experimentally. For the calibration of the simulation to the experiments, special designs of vertical p-n diodes were fabricated. These structures were investigated with respect to doping concentration, beam energy, and biasing. A strong influence of the surface preparation on the measurements and the extracted diffusion lengths are shown.

  15. Self-amplified CMOS image sensor using a current-mode readout circuit

    NASA Astrophysics Data System (ADS)

    Santos, Patrick M.; de Lima Monteiro, Davies W.; Pittet, Patrick

    2014-05-01

    The feature size of the CMOS processes decreased during the past few years and problems such as reduced dynamic range have become more significant in voltage-mode pixels, even though the integration of more functionality inside the pixel has become easier. This work makes a contribution on both sides: the possibility of a high signal excursion range using current-mode circuits together with functionality addition by making signal amplification inside the pixel. The classic 3T pixel architecture was rebuild with small modifications to integrate a transconductance amplifier providing a current as an output. The matrix with these new pixels will operate as a whole large transistor outsourcing an amplified current that will be used for signal processing. This current is controlled by the intensity of the light received by the matrix, modulated pixel by pixel. The output current can be controlled by the biasing circuits to achieve a very large range of output signal levels. It can also be controlled with the matrix size and this permits a very high degree of freedom on the signal level, observing the current densities inside the integrated circuit. In addition, the matrix can operate at very small integration times. Its applications would be those in which fast imaging processing, high signal amplification are required and low resolution is not a major problem, such as UV image sensors. Simulation results will be presented to support: operation, control, design, signal excursion levels and linearity for a matrix of pixels that was conceived using this new concept of sensor.

  16. A high linearity current mode second IF CMOS mixer for a DRM/DAB receiver

    NASA Astrophysics Data System (ADS)

    Jian, Xu; Zheng, Zhou; Yiqiang, Wu; Zhigong, Wang; Jianping, Chen

    2015-05-01

    A passive current switch mixer was designed for the second IF down-conversion in a DRM/DAB receiver. The circuit consists of an input transconductance stage, a passive current switching stage, and a current amplifier stage. The input transconductance stage employs a self-biasing current reusing technique, with a resistor shunt feedback to increase the gain and output impedance. A dynamic bias technique is used in the switching stage to ensure the stability of the overdrive voltage versus the PVT variations. A current shunt feedback is introduced to the conventional low-voltage second-generation fully balanced multi-output current converter (FBMOCCII), which provides very low input impedance and high output impedance. With the circuit working in current mode, the linearity is effectively improved with low supply voltages. Especially, the transimpedance stage can be removed, which simplifies the design considerably. The design is verified with a SMIC 0.18 μm RF CMOS process. The measurement results show that the voltage conversation gain is 1.407 dB, the NF is 16.22 dB, and the IIP3 is 4.5 dBm, respectively. The current consumption is 9.30 mA with a supply voltage of 1.8 V. This exhibits a good compromise among the gain, noise, and linearity for the second IF mixer in DRM/DAB receivers. Project supported by the National Natural Science Foundation of China (No. 61306069), and the National High Technology Research and Development Program of China (No. 2011AA010301).

  17. Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation.

    PubMed

    Tan, Gim Heng; Sidek, Roslina Mohd; Ramiah, Harikrishnan; Chong, Wei Keat; Lioe, De Xing

    2014-01-01

    This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm(2). PMID:25197694

  18. Iterative current mode per pixel ADC for 3D SoftChip implementation in CMOS

    NASA Astrophysics Data System (ADS)

    Lachowicz, Stefan W.; Rassau, Alexander; Lee, Seung-Minh; Eshraghian, Kamran; Lee, Mike M.

    2003-04-01

    Mobile multimedia communication has rapidly become a significant area of research and development constantly challenging boundaries on a variety of technological fronts. The processing requirements for the capture, conversion, compression, decompression, enhancement, display, etc. of increasingly higher quality multimedia content places heavy demands even on current ULSI (ultra large scale integration) systems, particularly for mobile applications where area and power are primary considerations. The ADC presented in this paper is designed for a vertically integrated (3D) system comprising two distinct layers bonded together using Indium bump technology. The top layer is a CMOS imaging array containing analogue-to-digital converters, and a buffer memory. The bottom layer takes the form of a configurable array processor (CAP), a highly parallel array of soft programmable processors capable of carrying out complex processing tasks directly on data stored in the top plane. This paper presents a ADC scheme for the image capture plane. The analogue photocurrent or sampled voltage is transferred to the ADC via a column or a column/row bus. In the proposed system, an array of analogue-to-digital converters is distributed, so that a one-bit cell is associated with one sensor. The analogue-to-digital converters are algorithmic current-mode converters. Eight such cells are cascaded to form an 8-bit converter. Additionally, each photo-sensor is equipped with a current memory cell, and multiple conversions are performed with scaled values of the photocurrent for colour processing.

  19. Progress in voltage and current mode on-chip analog-to-digital converters for CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Panicacci, Roger; Pain, Bedabrata; Zhou, Zhimin; Nakamura, Junichi; Fossum, Eric R.

    1996-03-01

    Two 8 bit successive approximation analog-to-digital converter (ADC) designs and a 12 bit current mode incremental sigma delta ((Sigma) -(Delta) ) ADC have been designed, fabricated, and tested. The successive approximation test chip designs are compatible with active pixel sensor (APS) column parallel architectures with a 20.4 micrometers pitch in a 1.2 micrometers n-well CMOS process and a 40 micrometers pitch in a 2 micrometers n-well CMOS process. The successive approximation designs consume as little as 49 (mu) W at a 500 KHz conversion rate meeting the low power requirements inherent in column parallel architectures. The current mode incremental (Sigma) -(Delta) ADC test chip is designed to be multiplexed among 8 columns in a semi-column parallel current mode APS architecture. The higher accuracy ADC consumes 800 (mu) W at a 5 KHz conversion rate.

  20. A BiCMOS time interval digitizer based on fully-differential, current-steering circuits

    SciTech Connect

    Loinaz, M.J.; Wooley, B.A. . Center for Integrated Systems)

    1994-06-01

    A time interval digitizer cell with a 0--16 ns input range and a nominal LSB width of 1.0 ns has been integrated in a 2-[mu]m BiCMOS technology. The circuit exhibits both integral and differential nonlinearity below 0.15 LSB and a timing error of 0.32 ns RMS. Logic gate propagation delays are used as time measurement units, and the nominal value of the delays is set by an on-chip phase-locked loop (PLL). Fully-differential, current-steering circuits with low voltage swings are used to implement the time interval digitizer so as to generate minimal switching noise. The cell is to be used in the monolithic, multi-channel realization of a high-sensitivity, mixed-signal data acquisition front-end. By virtue of the time digitization architecture used, the average power dissipation of the cell is only 19.8 mW, despite the use of circuits that dissipate static power, and the layout area is a compact 448 [mu]m x 634 [mu]m.

  1. Low power fast settling multi-standard current reusing CMOS fractional-N frequency synthesizer

    NASA Astrophysics Data System (ADS)

    Wenfeng, Lou; Peng, Feng; Haiyong, Wang; Nanjian, Wu

    2012-04-01

    A low power fast settling multi-standard CMOS fractional-N frequency synthesizer is proposed. The current reusing and frequency presetting techniques are adopted to realize the low power fast settling multi-standard fractional-N frequency synthesizer. An auxiliary non-volatile memory (NVM) is embedded to avoid the repetitive calibration process and to save power in practical application. This PLL is implemented in a 0.18 μm technology. The frequency range is 0.3 to 2.54 GHz and the settling time is less than 5 μs over the entire frequency range. The LC-VCO with the stacked divide-by-2 has a good figure of merit of -193.5 dBc/Hz. The measured phase noise of frequency synthesizer is about -115 dBc/Hz at 1 MHz offset when the carrier frequency is 2.4 GHz and the reference spurs are less than -52 dBc. The whole frequency synthesizer consumes only 4.35 mA @ 1.8 V.

  2. Robust design of a 500-MS/s 10-bit triple-channel current-steering DAC in 40 nm CMOS

    NASA Astrophysics Data System (ADS)

    Long, Cheng; Yu, Zhu; Kai, Zhu; Chixiao, Chen; Junyan, Ren

    2013-10-01

    A 500-MS/s 10-bit triple-channel current-steering DAC in 40 nm 1P8M CMOS advanced technology is proposed. The central symmetry random walk scheme is applied for current source arrays to avoid mismatching effects in nano-CMOS design. The high-speed latch drivers can be self-adaptively connected to switches in different voltage domains. The experimental data shows that the maximum DNL and INL are 0.42 LSB and 0.58 LSB. The measured SFDR at 1.7 MHz output signal is 58.91 dB, 58.53 dB and 56.98 dB for R/G/B channels, respectively. The DAC has good static and dynamic performance despite the single-ended output. The average rising time and falling time of three channels are 0.674 ns and 0.807 ns. The analog/digital power supply is 3.3 V/1.1 V. This triple-channel DAC occupies 0.5656 mm2.

  3. Integrated on-chip 0.35 μm BiCMOS current-mode DC-DC buck converter

    NASA Astrophysics Data System (ADS)

    Lee, Chan-Soo; Kim, Nam-Soo; Gendensuren, Munkhsuld; Choi, Jae-Ho; Choi, Joong-Ho

    2012-12-01

    A current-mode DC-DC buck converter with a fully integrated power module is presented in this article. The converter is implemented using BiCMOS technology in amplifier and power MOSFET in a current sensor. The current sensor is realised by the power lateral double-diffused MOSFET with the aspect ratio much larger than that of a matched p-MOSFET. In addition, BiCMOS technology is applied in the error amplifier for an accurate current sensing and a fast transient response. The DC-DC converter is fabricated with 0.35 µm BiCMOS process. Experimental results show that the fully integrated converter operates at 1.3 MHz switching frequency with a supply voltage of 5 V. The output DC voltage is obtained as expected and the output ripple is controlled to be within 2% with a 30 µH off-chip inductor and 100 µF off-chip capacitor.

  4. Regenerative switching CMOS system

    DOEpatents

    Welch, J.D.

    1998-06-02

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

  5. Regenerative switching CMOS system

    DOEpatents

    Welch, James D.

    1998-01-01

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

  6. A CMOS power-efficient low-noise current-mode front-end amplifier for neural signal recording.

    PubMed

    Wu, Chung-Yu; Chen, Wei-Ming; Kuo, Liang-Ting

    2013-04-01

    In this paper, a new current-mode front-end amplifier (CMFEA) for neural signal recording systems is proposed. In the proposed CMFEA, a current-mode preamplifier with an active feedback loop operated at very low frequency is designed as the first gain stage to bypass any dc offset current generated by the electrode-tissue interface and to achieve a low high-pass cutoff frequency below 0.5 Hz. No reset signal or ultra-large pseudo resistor is required. The current-mode preamplifier has low dc operation current to enhance low-noise performance and decrease power consumption. A programmable current gain stage is adopted to provide adjustable gain for adaptive signal scaling. A following current-mode filter is designed to adjust the low-pass cutoff frequency for different neural signals. The proposed CMFEA is designed and fabricated in 0.18-μm CMOS technology and the area of the core circuit is 0.076 mm(2). The measured high-pass cutoff frequency is as low as 0.3 Hz and the low-pass cutoff frequency is adjustable from 1 kHz to 10 kHz. The measured maximum current gain is 55.9 dB. The measured input-referred current noise density is 153 fA /√Hz , and the power consumption is 13 μW at 1-V power supply. The fabricated CMFEA has been successfully applied to the animal test for recording the seizure ECoG of Long-Evan rats. PMID:23853293

  7. Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors.

    PubMed

    Belloir, Jean-Marc; Goiffon, Vincent; Virmontois, Cédric; Raine, Mélanie; Paillet, Philippe; Duhamel, Olivier; Gaillardin, Marc; Molina, Romain; Magnan, Pierre; Gilard, Olivier

    2016-02-22

    The dark current produced by neutron irradiation in CMOS Image Sensors (CIS) is investigated. Several CIS with different photodiode types and pixel pitches are irradiated with various neutron energies and fluences to study the influence of each of these optical detector and irradiation parameters on the dark current distribution. An empirical model is tested on the experimental data and validated on all the irradiated optical imagers. This model is able to describe all the presented dark current distributions with no parameter variation for neutron energies of 14 MeV or higher, regardless of the optical detector and irradiation characteristics. For energies below 1 MeV, it is shown that a single parameter has to be adjusted because of the lower mean damage energy per nuclear interaction. This model and these conclusions can be transposed to any silicon based solid-state optical imagers such as CIS or Charged Coupled Devices (CCD). This work can also be used when designing an optical imager instrument, to anticipate the dark current increase or to choose a mitigation technique. PMID:26907077

  8. Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm bulk CMOS technology

    NASA Astrophysics Data System (ADS)

    Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, Hisaya

    2010-10-01

    Design issues associated with integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm bulk CMOS process are examined and the effects of fabrication parameters on transistor performance analyzed. HCBT is fabricated on a sidewall of a silicon hill defined by shallow trench isolation (STI). Height of the transistor is limited by the STI depth of 350 nm. Impact of vertical and horizontal dimensions on electrical performance of the transistor are analyzed by simulations with emphasis on extrinsic base design. Base current is reduced by high extrinsic base concentration and increased link-base length. Current gain is increased from 16 to 67 for transistor processed with the optimized extrinsic base profile. High-frequency performance is degraded by the collector charge sharing effect and can be improved by the larger separation between the extrinsic base and emitter, which is achieved with a small thickness of emitter polysilicon region. Misalignment tolerances of the extrinsic base implantation mask show no great impact on transistor's AC performance.

  9. A current mode feed-forward gain control system for a 0.8 V CMOS hearing aid

    NASA Astrophysics Data System (ADS)

    Fanyang, Li; Haigang, Yang; Fei, Liu; Tao, Yin

    2011-06-01

    A current mode feed-forward gain control (CMFGC) technique is presented, which is applied in the front-end system of a hearing aid chip. Compared with conventional automatic gain control (AGC), CMFGC significantly improves the total harmonic distortion (THD) by digital gain control. To attain the digital gain control codes according to the extremely weak output signal from the microphone, a rectifier and a state controller implemented in current mode are proposed. A prototype chip has been designed based on a 0.13 μm standard CMOS process. The measurement results show that the supply voltage can be as low as 0.6 V. And with the 0.8 V supply voltage, the THD is improved and below 0.06% (-64 dB) at the output level of 500 mVp-p, yet the power consumption is limited to 40 μW. In addition, the input referred noise is only 4 μVrms and the maximum gain is maintained at 33 dB.

  10. Effects of shallow trench isolation on low frequency noise characteristics of source-follower transistors in CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Kwon, Sung-Kyu; Kwon, Hyuk-Min; Choi, Woon-Il; Song, Hyeong-Sub; Lee, Hi-Deok

    2016-05-01

    The effects of the shallow trench isolation (STI) edge on low frequency noise characteristics of source-follower (SF) transistors in CMOS image sensors (CIS) were investigated. Random telegraph signal (RTS) noise and 1/f noise were measured in a CIS operating voltage region for a realistic assessment. SF transistor with STI edge in contact with channel shows a lower probability of generating RTS noise but greater RTS amplitude due to the enhanced trap density induced by STI-induced damage. SF MOSFETs without STI exhibit a much lower 1/f noise power spectral density in spite of the greater RTS generation probability, which is due to the decreased trap density. Therefore, SF transistors without STI edge in contact with channel are promising candidates for low noise CIS applications.

  11. A low-power current self-adjusted VCO using a bottom PMOS current source

    NASA Astrophysics Data System (ADS)

    Zhixiong, Sheng; Fengqi, Yu

    2014-09-01

    This paper presents the design and implementation of a current self-adjusted VCO with low power consumption. In the proposed VCO, a bottom PMOS current source instead of a top one is adopted to decrease the tail noise. A current self-adjusted technique without additional external control signals is taken to ensure the VCO starts up in the whole band while keeping the power consumption relatively low. Meanwhile, the phase noise of the VCO at the low frequency (high Cvar) can be reduced by the technique. The circuit is implemented in 0.18 μm CMOS technology. The proposed VCO exhibits low power consumption of < 1.6 mW at a 1.5 V supply voltage and a tuning range from 11.79 to 12.53 GHz. The measured phase noise at 1 MHz offset from the frequency 11.79 GHz is -104.7 dBc/Hz, and the corresponding FOM is -184.2 dBc/Hz.

  12. Beam current controller for laser ion source

    SciTech Connect

    Okamura, Masahiro

    2014-10-28

    The present invention relates to the design and use of an ion source with a rapid beam current controller for experimental and medicinal purposes. More particularly, the present invention relates to the design and use of a laser ion source with a magnetic field applied to confine a plasma flux caused by laser ablation.

  13. Centroid Position as a Function of Total Counts in a Windowed CMOS Image of a Point Source

    SciTech Connect

    Wurtz, R E; Olivier, S; Riot, V; Hanold, B J; Figer, D F

    2010-05-27

    We obtained 960,200 22-by-22-pixel windowed images of a pinhole spot using the Teledyne H2RG CMOS detector with un-cooled SIDECAR readout. We performed an analysis to determine the precision we might expect in the position error signals to a telescope's guider system. We find that, under non-optimized operating conditions, the error in the computed centroid is strongly dependent on the total counts in the point image only below a certain threshold, approximately 50,000 photo-electrons. The LSST guider camera specification currently requires a 0.04 arcsecond error at 10 Hertz. Given the performance measured here, this specification can be delivered with a single star at 14th to 18th magnitude, depending on the passband.

  14. A 0.7 V, 40 nW Compact, Current-Mode Neural Spike Detector in 65 nm CMOS.

    PubMed

    Yao, Enyi; Chen, Yi; Basu, Arindam

    2016-04-01

    In this paper, we describe a novel low power, compact, current-mode spike detector circuit for real-time neural recording systems where neural spikes or action potentials (AP) are of interest. Such a circuit can enable massive compression of data facilitating wireless transmission. This design can generate a high signal-to-noise ratio (SNR) output by approximating the popularly used nonlinear energy operator (NEO) through standard analog blocks. We show that a low pass filter after the NEO can be used for two functions-(i) estimate and cancel low frequency interference and (ii) estimate threshold for spike detection. The circuit is implemented in a 65 nm CMOS process and occupies 200 μm × 150 μ m of chip area. Operating from a 0.7 V power supply, it consumes about 30 nW of static power and 7 nW of dynamic power for 100 Hz input spike rate making it the lowest power consuming spike detector reported so far. PMID:26168445

  15. A constant current source for extracellular microiontophoresis.

    PubMed

    Walker, T; Dillman, N; Weiss, M L

    1995-12-01

    A sophisticated constant-current source suitable for extracellular microiontophoresis of tract-tracing substances, such as Phaseolus vulgaris leucoagglutinin, Biocytin or Fluoro-Gold, is described. This design uses a flyback switched-mode power supply to generate controllable high-voltage and operational amplifier circuitry to regulate current and provide instrumentation. Design features include a fast rise time, +/- 2000 V supply (stable output in < 250 ms), simultaneous load current and voltage monitoring, and separate pumping and holding current settings. Three features of this constant-current source make it especially useful for extracellular microiontophoresis. First, the output voltage monitor permits one to follow changes in the microelectrode resistance during current injection. Second, the voltage-limit (or out-of-compliance) indicator circuitry will sound an alarm when the iontophoretic pump is unable to generate the desired current, such as when the micropipette is blocked. Third, the high-compliance voltage power supply insures up to +/- 20 microA of current through 100 M omega resistance. This device has proven itself to be a reliable constant-current source for extracellular microiontophoresis in the laboratory. PMID:8788057

  16. Equivalent source current formulation in impedance tomography

    NASA Astrophysics Data System (ADS)

    Ilmoniemi, Risto J.; Ahlfors, Seppo P.

    1994-04-01

    Changes in the conductivity distribution of a body modify the electromagnetic field due to injected current in the same way as an equivalent source current distribution J(sup eq)(r) does. In the limit of small perturbations, it is shown that J(sup eq)(r) = Sigma(sup 1)(r)E(sup 0)(r), where Sigma(sup 1)(r) is a deviation in the conductivity and E(sup 0)(r) is the non-perturbed electric field. A model experiment demonstrates how a conductivity anomaly can be located using the minimum-norm estimate of the equivalent currents. The minimum-norm solution for small perturbation Sigma(sup 1)(r) is derived as well. The equivalent-source formulation allows the direct application of biomagnetic and bioelectric source-determination methods to conductivity imaging.

  17. A compact rail-to-rail CMOS buffer amplifier with very low quiescent current

    NASA Astrophysics Data System (ADS)

    Arslan, Emre; Yıldız, Merih; Minaei, Shahram

    2015-06-01

    In this work, a very compact, rail-to-rail, high-speed buffer amplifier for liquid crystal display (LCD) applications is proposed. Compared to other buffer amplifiers, the proposed circuit has a very simple architecture, occupies a small number of transistors and also has a large driving capacity with very low quiescent current. It is composed of two complementary differential input stages to provide rail-to-rail driving capacity. The push-pull transistors are directly connected to the differential input stage, and the output is taken from an inverter. The proposed buffer circuit is laid out using Mentor Graphics IC Station layout editor using AMS 0.35 μm process parameters. It is shown by post-layout simulations that the proposed buffer can drive a 1 nF capacitive load within a small settling time under a full voltage swing, while drawing only 1.6 μA quiescent current from a 3.3 V power supply.

  18. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  19. Quantum efficiency and dark current evaluation of a backside illuminated CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Vereecke, Bart; Cavaco, Celso; De Munck, Koen; Haspeslagh, Luc; Minoglou, Kyriaki; Moore, George; Sabuncuoglu, Deniz; Tack, Klaas; Wu, Bob; Osman, Haris

    2015-04-01

    We report on the development and characterization of monolithic backside illuminated (BSI) imagers at imec. Different surface passivation, anti-reflective coatings (ARCs), and anneal conditions were implemented and their effect on dark current (DC) and quantum efficiency (QE) are analyzed. Two different single layer ARC materials were developed for visible light and near UV applications, respectively. QE above 75% over the entire visible spectrum range from 400 to 700 nm is measured. In the spectral range from 260 to 400 nm wavelength, QE values above 50% over the entire range are achieved. A new technique, high pressure hydrogen anneal at 20 atm, was applied on photodiodes and improvement in DC of 30% for the BSI imager with HfO2 as ARC as well as for the front side imager was observed. The entire BSI process was developed 200 mm wafers and evaluated on test diode structures. The knowhow is then transferred to real imager sensors arrays.

  20. A programmable low power current source for bioimpedance measurement: Towards a wearable personalized health assistant.

    PubMed

    Hamed, Zaid; Tenhunen, Hannu; Yang, Geng

    2015-08-01

    Bioimpedance is a noninvasive measurement method that facilitates body composition analysis, besides being indicative of many other health parameters. In this work a novel programmable, low complexity, high output impedance, high voltage compliance and wideband current source for bioimpedance applications is presented. Previously, we designed, fabricated and tested in vivo a bio-patch for acquisition of multiple bio-signals. Upon integration with our previous work, this circuit is envisioned to constitute part of a personalized health assistant. Simulation at worst case corners and real operation conditions was carried out using UMC-180 nm 1 poly 6 metal CMOS process. Full duty cycle, shortened or stepped square waves can be generated. Amplitude control of 8 different current levels is supported. Frequency can be tuned up to 1 MHz and an output impedance of 2.8 MO @ 250 KHz is achieved at full current capacity. Total current consumption is comparable to the injected current, making the circuit highly efficient. PMID:26736687

  1. Dc characterization of lateral bipolar devices in standard CMOS technology: a new model for base current partitioning

    NASA Astrophysics Data System (ADS)

    Corsi, F.; Di Ciano, M.; Marzocca, C.

    1999-05-01

    As is generally known, compared with MOSFETs bipolar transistors provide better performance in terms of small signal transconductance, intrinsic cut-off frequency and noise characteristics, at the cost of a more expensive technology. A good compromise between the low costs proper of standard CMOS technology and the excellent performance typical of bipolar devices can be achieved by using bipolar transistors derived from MOS structures. Naturally suitable models combined with efficient parameter extraction techniques are mandatory to provide designers with reliable simulation tools. A dc parameter extraction procedure for a PNP lateral transistor realized in a standard CMOS technology based on an existing composite circuit model is presented here. The extraction results provide accurate fitting between measured and simulated data for different operating regions without resort to numerical optimization, thus preserving the physical meaning of the extracted parameters and retaining a good correlation with process variations.

  2. A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter.

    PubMed

    Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

    2016-01-01

    This paper presents the first low noise complementary metal oxide semiconductor (CMOS) deletedCMOS terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31 × 31 focal plane array has been fully integrated in a 0 . 13 μ m standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0 . 2 μ V RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0 . 6 nW at 270 GHz and 0 . 8 nW at 600 GHz. PMID:26950131

  3. Light-controlled biphasic current stimulator IC using CMOS image sensors for high-resolution retinal prosthesis and in vitro experimental results with rd1 mouse.

    PubMed

    Oh, Sungjin; Ahn, Jae-Hyun; Lee, Sangmin; Ko, Hyoungho; Seo, Jong Mo; Goo, Yong-Sook; Cho, Dong-il Dan

    2015-01-01

    Retinal prosthetic devices stimulate retinal nerve cells with electrical signals proportional to the incident light intensities. For a high-resolution retinal prosthesis, it is necessary to reduce the size of the stimulator pixels as much as possible, because the retinal nerve cells are concentrated in a small area of approximately 5 mm × 5 mm. In this paper, a miniaturized biphasic current stimulator integrated circuit is developed for subretinal stimulation and tested in vitro. The stimulator pixel is miniaturized by using a complementary metal-oxide-semiconductor (CMOS) image sensor composed of three transistors. Compared to a pixel that uses a four-transistor CMOS image sensor, this new design reduces the pixel size by 8.3%. The pixel size is further reduced by simplifying the stimulation-current generating circuit, which provides a 43.9% size reduction when compared to the design reported to be the most advanced version to date for subretinal stimulation. The proposed design is fabricated using a 0.35 μm bipolar-CMOS-DMOS process. Each pixel is designed to fit in a 50 μ m × 55 μm area, which theoretically allows implementing more than 5000 pixels in the 5 mm × 5 mm area. Experimental results show that a biphasic current in the range of 0 to 300 μA at 12 V can be generated as a function of incident light intensities. Results from in vitro experiments with rd1 mice indicate that the proposed method can be effectively used for retinal prosthesis with a high resolution. PMID:25020014

  4. HIGH CURRENT RADIO FREQUENCY ION SOURCE

    DOEpatents

    Abdelaziz, M.E.

    1963-04-01

    This patent relates to a high current radio frequency ion source. A cylindrical plasma container has a coil disposed around the exterior surface thereof along the longitudinal axis. Means are provided for the injection of an unionized gas into the container and for applying a radio frequency signal to the coil whereby a radio frequency field is generated within the container parallel to the longitudinal axis thereof to ionize the injected gas. Cathode and anode means are provided for extracting transverse to the radio frequency field from an area midway between the ends of the container along the longitudinal axis thereof the ions created by said radio frequency field. (AEC)

  5. SPALLATION NEUTRON SOURCE BEAM CURRENT MONITOR ELECTRONICS.

    SciTech Connect

    KESSELMAN,M.; DAWSON,W.C.

    2002-05-06

    This paper will discuss the present electronics design for the beam current monitor system to be used throughout the Spallation Neutron Source (SNS) under construction at Oak Ridge National Laboratory. The beam is composed of a micro-pulse structure due to the 402.5MHz RF, and is chopped into mini-pulses of 645ns duration with a 300ns gap, providing a macro-pulse of 1060 mini-pulses repeating at a 60Hz rate. Ring beam current will vary from about 15ma peak during studies, to about 50Amps peak (design to 100 amps). A digital approach to droop compensation has been implemented and initial test results presented.

  6. A high performance current source inverter

    SciTech Connect

    Joos, G.; Moschopoulos, G.; Ziogas, P.D.

    1993-10-01

    A recent innovation in current source inverter (CSI) drives has been the introduction of pulsewidth modulation (PWM) for the purpose of improving the quality of the load currents and voltages. However, the typical six switch CSI circuit is not compatible with all standard PWM techniques thus limiting the number of schemes that can be used. The modified CSI circuit discussed in this paper removes most of the restrictions at the ``cost`` of an extra switch. Additional advantages include faster response times through modulation index control and higher efficiency. This paper includes a detailed steady-state analysis and design procedure. The feasibility and performance of the modified CSI are verified by simulation and experimental implementation on a 5 kVA converter.

  7. Noise in a CMOS digital pixel sensor

    NASA Astrophysics Data System (ADS)

    Chi, Zhang; Suying, Yao; Jiangtao, Xu

    2011-11-01

    Based on the study of noise performance in CMOS digital pixel sensor (DPS), a mathematical model of noise is established with the pulse-width-modulation (PWM) principle. Compared with traditional CMOS image sensors, the integration time is different and A/D conversion is implemented in each PWM DPS pixel. Then, the quantitative calculating formula of system noise is derived. It is found that dark current shot noise is the dominant noise source in low light region while photodiode shot noise becomes significantly important in the bright region. In this model, photodiode shot noise does not vary with luminance, but dark current shot noise does. According to increasing photodiode capacitance and the comparator's reference voltage or optimizing the mismatch in the comparator, the total noise can be reduced. These results serve as a guideline for the design of PWM DPS.

  8. Extracted current saturation in negative ion sources

    SciTech Connect

    Mochalskyy, S.; Lifschitz, A. F.; Minea, T.

    2012-06-01

    The extraction of negatively charged particles from a negative ion source is one of the crucial issues in the development of the neutral beam injector system for future experimental reactor ITER. Full 3D electrostatic particle-in-cell Monte Carlo collision code - ONIX [S. Mochalskyy et al., Nucl. Fusion 50, 105011 (2010)] - is used to simulate the hydrogen plasma behaviour and the extracted particle features in the vicinity of the plasma grid, both sides of the aperture. It is found that the contribution to the extracted negative ion current of ions born in the volume is small compared with that of ions created at the plasma grid walls. The parametric study with respect to the rate of negative ions released from the walls shows an optimum rate. Beyond this optimum, a double layer builds-up by the negative ion charge density close to the grid aperture surface reducing thus extraction probability, and therefore the extracted current. The effect of the extraction potential and magnetic field magnitudes on the extraction is also discussed. Results are in good agreement with available experimental data.

  9. Resistor Extends Life Of Battery In Clocked CMOS Circuit

    NASA Technical Reports Server (NTRS)

    Wells, George H., Jr.

    1991-01-01

    Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

  10. On noise in time-delay integration CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Levski, Deyan; Choubey, Bhaskar

    2016-05-01

    Time delay integration sensors are of increasing interest in CMOS processes owing to their low cost, power and ability to integrate with other circuit readout blocks. This paper presents an analysis of the noise contributors in current day CMOS Time-Delay-Integration image sensors with various readout architectures. An analysis of charge versus voltage domain readout modes is presented, followed by a noise classification of the existing Analog Accumulator Readout (AAR) and Digital Accumulator Readout (DAR) schemes for TDI imaging. The analysis and classification of existing readout schemes include, pipelined charge transfer, buffered direct injection, voltage as well as current-mode analog accumulators and all-digital accumulator techniques. Time-Delay-Integration imaging modes in CMOS processes typically use an N-number of readout steps, equivalent to the number of TDI pixel stages. In CMOS TDI sensors, where voltage domain readout is used, the requirements over speed and noise of the ADC readout chain are increased due to accumulation of the dominant voltage readout and ADC noise with every stage N. Until this day, the latter is the primary reason for a leap-back of CMOS TDI sensors as compared to their CCD counterparts. Moreover, most commercial CMOS TDI implementations are still based on a charge-domain readout, mimicking a CCD-like operation mode. Thus, having a good understanding of each noise contributor in the signal chain, as well as its magnitude in different readout architectures, is vital for the design of future generation low-noise CMOS TDI image sensors based on a voltage domain readout. This paper gives a quantitative classification of all major noise sources for all popular implementations in the literature.

  11. Ferroelectric, stacked gate FETs: A prospective for planar CMOS with reduced leakage current and Sub-kT/q subthreshold swing

    NASA Astrophysics Data System (ADS)

    Kumar, Mirgender; Park, Si-Hyun

    2016-07-01

    The planar silicon-on-insulator (SOI) based metal-oxide semiconductor (MOS) structure has been at the center of attention of researchers who are attempting to extend its scalability. This study presents an analysis of ferroelectric MOS field effect transis-tors (Fe-MOSFETs) based on the surface potential, threshold voltage, subthreshold swing, leakage current, ON current and electron temperature. In addition, the electro-static integrity ( EI) factor and the threshold-voltage-to-swing ratio for Fe-MOSFETs were estimated and compared with those of conventional, high-k and double-gate (DG) MOSFETs. The analysis shows that the Fe-MOSFET is able to enhance the scalability and fulfil the expectation of researchers studying planar complementary MOS (CMOS) devices.

  12. A zero-voltage switching technique for minimizing the current-source power of implanted stimulators.

    PubMed

    Çilingiroğlu, Uğur; İpek, Sercan

    2013-08-01

    The current-source power of an implanted stimulator is reduced almost to the theoretical minimum by driving the electrodes directly from the secondary port of the inductive link with a dedicated zero-voltage switching power supply. A feedback loop confined to the secondary of the inductive link adjusts the timing and conduction angle of switching to provide just the right amount of supply voltage needed for keeping the current-source voltage constant at or slightly above the compliance limit. Since drive is based on current rather than voltage, and supply-voltage update is near real-time, the quality of the current pulses is high regardless of how the electrode impedance evolves during stimulation. By scaling the switching frequency according to power demand, the technique further improves overall power consumption of the stimulator. The technique is implemented with a very simple control circuitry comprising a comparator, a Schmitt trigger and a logic gate of seven devices in addition to an on-chip switch and an off-chip capacitor. The power consumed by the proposed supply circuit itself is no larger than what the linear regulator of a conventional supply typically consumes for the same stimulation current. Still, the sum of supply and current-source power is typically between 20% and 75% of the conventional source power alone. Functionality of the proposed driver is verified experimentally on a proof-of-concept prototype built with 3.3 V devices in a 0.18 μm CMOS technology. PMID:23893206

  13. Thimerosal: current sources of contact in Brazil.

    PubMed

    Rocha, Vanessa Barreto; Scherrer, Maria Antonieta Rios

    2014-01-01

    Thimerosal is an organic mercury derivative found in ophthalmic solutions and certain vaccines in Brazil. Although most studies suggest the prevalence of thimerosal sensitivity to be quite high, this condition does not currently have any clinical relevance. The present article surveyed 184 Brazilian products (151 topical medications and 33 vaccines) and found that thimerosal was only present in 3 ophthalmic solutions and 5 vaccines. PMID:24770530

  14. A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter

    PubMed Central

    Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

    2016-01-01

    This paper presents the first low noise complementary metal oxide semiconductor (CMOS) terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31×31 focal plane array has been fully integrated in a 0.13μm standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0.2μV RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0.6 nW at 270 GHz and 0.8 nW at 600 GHz. PMID:26950131

  15. Analysis of noise characteristics for the active pixels in CMOS image sensors for X-ray imaging

    NASA Astrophysics Data System (ADS)

    Kim, Young Soo; Cho, Gyuseong; Bae, Jun-Hyung

    2006-09-01

    CMOS image sensors have poorer performance compared to conventional charge coupled devices (CCDs). Since CMOS Active Pixel Sensors (APSs) in general have higher temporal noise, higher dark current, smaller full well charge capacitance, and lower spectral response, they cannot provide the same wide dynamic range and superior signal to noise ratio as CCDs. In view of electronic noise, the main source for the CMOS APS is the pixel, along with other signal processing blocks such as row and column decoder, analog signal processor (ASP), analog-to-digital converter (ADC), and timing and control logic circuitry. Therefore, it is important and necessary to characterize noise of the active pixels in CMOS APSs, and we performed experimental measurements and comparisons with theoretical estimations. To derive noise source of the pixels, we designed and fabricated four types of CMOS active pixels, and each pixel is composed of a photodiode and three MOS transistors. The size of these pixels is 100 μm×100 μm. The test chip was fabricated using ETRI 0.8 μm (2P/2M) standard CMOS process. It was found that the dominant noise in CMOS active pixels is shot noise during integration under normal operating conditions. And, it was also seen that epitaxial type pixels have similar noise level compared to non-epitaxial type, and the noise of diffusion type pixel is larger than for a well type pixel on the same substrate type.

  16. High Current Ion Sources and Injectors for Heavy Ion Fusion

    SciTech Connect

    Kwan, Joe W.

    2005-02-15

    Heavy ion beam driven inertial fusion requires short ion beam pulses with high current and high brightness. Depending on the beam current and the number of beams in the driver system, the injector can use a large diameter surface ionization source or merge an array of small beamlets from a plasma source. In this paper, we review the scaling laws that govern the injector design and the various ion source options including the contact ionizer, the aluminosilicate source, the multicusp plasma source, and the MEVVA source.

  17. The source of the Leeuwin Current seasonality

    NASA Astrophysics Data System (ADS)

    Ridgway, K. R.; Godfrey, J. S.

    2015-10-01

    The seasonal circulation around the southwestern boundary of Australia is documented using sea level anomalies from satellite altimetry. Results extrapolated to the coast agree closely with tide gauge observations indicating that seasonal altimeter fields are realistic. Monthly sea level maps identify an annual propagating wave along a waveguide extending along the shelf edge, from the Gulf of Carpentaria to southern Tasmania. The annual sea level pulse does not originate from the Pacific Ocean, as annual Pacific sea level variations are completely out of phase with signals south of the Indonesian archipelago. The presence of a phase discontinuity is demonstrated in annual sea level, temperature, and salinity observations. The origin of the Leeuwin Current seasonality is in the Gulf of Carpentaria where monsoonal winds drive a massive buildup of sea level from November to December. During December-February, a sea level "pulse" emerges from the region, and rapidly propagates poleward along the western and southern Australian boundary. In the broad shelf region centered at 19°S, an independent process forms a high sea level feature when a positive heat flux anomaly induces an annual increase in sea surface temperature which is rapidly mixed through the water column by the strong regional tides. In March, the winds relax and switch to a downwelling favorable alongshore component. In this period, the sea level pulse is essentially in a quasi-static equilibrium with the annual propagating wind systems. The change in cross-shelf sea level gradient along the 8000 km path length at the western and southern boundaries, drives the seasonal changes in the Leeuwin Current flow.

  18. SEMICONDUCTOR INTEGRATED CIRCUITS: A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems

    NASA Astrophysics Data System (ADS)

    Krit, Salahddine; Qjidaa, Hassan; El Affar, Imad; Khadija, Yafrah; Messghati, Ziani; El-Ghzizal, Yassir

    2010-04-01

    This paper presents a novel organization of switch capacitor charge pump circuits based on voltage doubler structures. Each voltage doubler takes a DC input and outputs a doubled DC voltage. By cascading voltage doublers the output voltage increases up to 2 times. A two-phase voltage doubler and a multiphase voltage doubler structures are discussed and design considerations are presented. A simulator working in the Q-V realm was used for simplified circuit level simulation. In order to evaluate the power delivered by a charge pump, a resistive load is attached to the output of the charge pump and an equivalent capacitance is evaluated. To avoid the short circuit during switching, a clock pair generator is used to achieve multi-phase non-overlapping clock pairs. This paper also identifies optimum loading conditions for different configurations of the charge pumps. The proposed charge-pump circuit is designed and simulated by SPICE with TSMC 0.35-μm CMOS technology and operates with a 2.7 to 3.6 V supply voltage. It has an area of 0.4 mm2; it was designed with a frequency regulation of 1 MHz and internal current mode to reduce power consumption.

  19. Current Source Converters in Discontinuous Conduction Modes of Operation

    NASA Astrophysics Data System (ADS)

    Cuzner, Robert M.

    This work demonstrates that Current Source Rectifier (CSR) pulse-width modulation (PWM) can be successfully modified for discontinuous conduction mode (DCM). DCM is characterized by input current distortion and non-linear input to output voltage ratio. A Dead-Beat Current Injection (DBCI) PWM method is developed that ensures sinusoidal input currents and linear input to output voltage control while in DCM. A method for control analysis is proposed that enables design of the CSR closed loop voltage controller. The proposed method is simulated to show that the desired objectives are achieved at no load and very light load, where the CSR operates in an extreme DCM condition. Experimental results verify performance of the DBCI-PWM method and validate both simulation and analytical tools used to explore the capabilities of the approach. Index Terms---Active buck rectifier, Current source rectifier (CSR), current source PWM rectifier, power conversion, power converter design, power converter analysis, input power quality

  20. Development of a low noise MREIT current source

    NASA Astrophysics Data System (ADS)

    Kim, Young Tae; Yoo, Pil Joong; In Oh, Tong; Woo, Eung Je

    2010-04-01

    In MREIT conductivity imaging experiments of animal and human subjects, we should minimize the noise level in measured magnetic flux density data induced by injection currents with low amplitude. Since noise and artifact from an MREIT current source directly affect the quality of the data, a low-noise current source is desirable. In order to be compatible with various MREIT pulse sequences, it should be also programmable. We have developed a new MREIT current source, which is controlled by a PC program for flexibility. We designed it in such a way that it is located inside the shield room of an MRI system. To minimize noise and artifact, we adopted an optical link for the connection to the PC outside the shield room. The enclosure of the new current source provides a magnetic as well as electric shielding to prevent high frequency switching noise of the current source from interfering with the scanner. It is powered by a rechargeable battery so that the entire current source is isolated from the ground. Equipped with automatic lead switching capability, it simplifies and automates MREIT imaging experiments. Our experimental results show that its performance is superior to the previous version, which is located outside the shield room.

  1. Multipulse current source offers low power losses and high reliability

    NASA Technical Reports Server (NTRS)

    1967-01-01

    Pulse current source uses low loss, high reliability, LC circuits to provide the necessary high impedance for magnetic memory cores, frequently used in digital computational equipment. Square-loop reactors replace the semiconductor switches previously used.

  2. High current vacuum arc ion source for heavy ion fusion

    SciTech Connect

    Qi, N.; Schein, J.; Gensler, S.; Prasad, R.R.; Krishnan, M.; Brown, I.

    1999-07-01

    Heavy Ion fusion (HIF) is one of the approaches for the controlled thermonuclear power production. A source of heavy ions with charge states 1+ to 2+, in {approximately}0.5 A current beams with {approximately}20 {micro}s pulse widths and {approximately}10 Hz repetition rates are required. Thermionic sources have been the workhorse for the HIF program to date, but suffer from sloe turn-on, heating problems for large areas, are limited to low (contact) ionization potential elements and offer relatively low ion fluxes with a charge state limited to 1+. Gas injection sources suffer from partial ionization and deleterious neutral gas effects. The above shortcomings of the thermionic ion sources can be overcome by a vacuum arc ion source. The vacuum arc ion source is a good candidate for HIF applications. It is capable of providing ions of various elements and different charge states, in short and long pulse bursts, with low emittance and high beam currents. Under a Phase-I STTR from DOE, the feasibility of the vacuum arc ion source for the HIF applications is investigated. An existing ion source at LBNL was modified to produce {approximately}0.5 A, {approximately}60 keV Gd (A{approximately}158) ion beams. The experimental effort concentrated on beam noise reduction, pulse-to-pulse reproducibility and achieving low beam emittance at 0.5 A ion current level. Details of the source development will be reported.

  3. VVCF Single-phase Current Source Converter using Single Bridge

    NASA Astrophysics Data System (ADS)

    Neba, Yasuhiko; Matsumoto, Hirokazu; Itoh, Ryozo; Ishizaka, Kouichi; Hashimoto, Koichiro; Kaji, Daiki

    A single-phase current source converter with variable voltage and constant frequency is presented. The converter is a single bridge circuit of two legs and has a smoothing reactor in the dc side. The power source and the load are connected in series and they are connected to the bridge legs. The normal PWM method with the sinusoidal modulating and the triangular carrier waves is employed for the converter. The experimental results confirm that the PWM converter has the sinusoidal voltage and current in both the source and the load.

  4. MEG-based imaging of focal neuronal current sources

    SciTech Connect

    Phillips, J.W.; Leahy, R.M.; Mosher, J.C.

    1996-07-01

    We describe a new approach to imaging neuronal current sources from measurements of the magnetoencephalogram (MEG) associated with sensory, motor, or cognitive brain activation. Previous approaches to this problem have concentrated on the use of weighted minimum norm inverse methods. While these methods ensure a unique solution, they do not introduce information specific to the MEG inverse problem, often producing overly smoothed solutions and exhibiting severe sensitivity to noise. We describe a Bayesian formulation of the inverse problem in which a Gibbs prior is constructed to reflect the sparse focal nature of neuronal current sources associated with evoked response data. The prior involves a binary process indicating active sources and a continuous Gaussian process designating associated amplitudes. An estimate of the primary current source distribution for a specific data set is formed by maximizing over the posterior probability with respect to the binary and continuous variables.

  5. An in vitro demonstration of CMOS-based optoelectronic neural interface device for optogenetics.

    PubMed

    Tokuda, T; Nakajima, S; Maezawa, Y; Noda, T; Sasagawa, K; Ishikawa, Y; Shiosaka, S; Ohta, J

    2013-01-01

    A CMOS-based neural interface device equipped with an integrated micro light source array for optogenetics was fabricated and demonstrated. A GaInN LED array formed on sapphire substrate was successfully assembled with a multifunctional CMOS image sensor that is capable of on-chip current injection. We demonstrated a functionality of light stimulation onto ChR2-expressed cells in an in vitro experiment. A ChR2-expressed cell were successfully stimulated with the light emitted from the fabricated device. PMID:24109808

  6. Development of a high current H(-) ion source for cyclotrons.

    PubMed

    Etoh, H; Aoki, Y; Mitsubori, H; Arakawa, Y; Mitsumoto, T; Yajima, S; Sakuraba, J; Kato, T; Okumura, Y

    2014-02-01

    A multi-cusp DC H(-) ion source has been designed and fabricated for medical applications of cyclotrons. Optimization of the ion source is in progress, such as the improvement of the filament configuration, magnetic filter strength, extraction electrode's shape, configuration of electron suppression magnets, and plasma electrode material. A small quantity of Cs has been introduced into the ion source to enhance the negative ion beam current. The ion source produced 16 mA of DC H(-) ion beam with the Cs-seeded operation at a low arc discharge power of 2.8 kW. PMID:24593547

  7. Study of Direct Current Negative Ion Source for Medicine Accelerator

    SciTech Connect

    Belchenko, Yu.; Ivanov, I.; Piunov, I.

    2005-04-06

    Status of dc H- ion source development for tandem accelerator of boron capture neutron therapy is described. Upgrade and study of the Penning surface-plasma source with hollow cathodes was continued. Results of source optimization, of ion optic computer simulation, and of emittance measurement are presented. The upgraded source delivers dc H- beam with energy 25 kV, current 8 mA, 1rms emittance JukcyX {approx} 0.2 {pi} mm{center_dot}mrad, JukcyY {approx} 0.3 {pi} mm{center_dot}mrad at discharge power {<=} 0.5 kW.

  8. Design of a 10-bit segmented current-steering digital-to-analog converter in CMOS 65 nm technology for the bias of new generation readout chips in high radiation environment

    NASA Astrophysics Data System (ADS)

    De Robertis, G.; Loddo, F.; Mattiazzo, S.; Pacher, L.; Pantano, D.; Tamma, C.

    2016-01-01

    A new pixel front end chip for HL-LHC experiments in CMOS 65nm technology is under development by the CERN RD53 collaboration together with the Chipix65 INFN project. This work describes the design of a 10-bit segmented current-steering Digital-to-Analog Converter (DAC) to provide a programmable bias current to the analog blocks of the circuit. The main requirements are monotonicity, good linearity, limited area consumption and radiation hardness up to 10 MGy. The DAC was prototyped and electrically tested, while irradiation tests will be performed in Autumn 2015.

  9. Effective shielding to measure beam current from an ion source

    SciTech Connect

    Bayle, H.; Delferrière, O.; Gobin, R.; Harrault, F.; Marroncle, J.; Senée, F.; Simon, C.; Tuske, O.

    2014-02-15

    To avoid saturation, beam current transformers must be shielded from solenoid, quad, and RFQ high stray fields. Good understanding of field distribution, shielding materials, and techniques is required. Space availability imposes compact shields along the beam pipe. This paper describes compact effective concatenated magnetic shields for IFMIF-EVEDA LIPAc LEBT and MEBT and for FAIR Proton Linac injector. They protect the ACCT Current Transformers beyond 37 mT radial external fields. Measurements made at Saclay on the SILHI source are presented.

  10. Fabrication of CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Malinovich, Yacov; Koltin, Ephie; Choen, David; Shkuri, Moshe; Ben-Simon, Meir

    1999-04-01

    In order to provide its customers with sub-micron CMOS fabrication solutions for imaging applications, Tower Semiconductor initiated a project to characterize the optical parameters of Tower's 0.5-micron process. A special characterization test chip was processed using the TS50 process. The results confirmed a high quality process for optical applications. Perhaps the most important result is the process' very low dark current, of 30-50 pA/cm2, using the entire window of process. This very low dark current characteristic was confirmed for a variety of pixel architectures. Additionally, we have succeeded to reduce and virtually eliminate the white spots on large sensor arrays. As a foundry Tower needs to support fabrication of many different imaging products. Therefore we have developed a fabrication methodology that is adjusted to the special needs of optical applications. In order to establish in-line process monitoring of the optical parameters, Tower places a scribe line optical test chip that enables wafer level measurements of the most important parameters, ensuring the optical quality and repeatability of the process. We have developed complementary capabilities like in house deposition of color filter and fabrication of very large are dice using sub-micron CMOS technologies. Shellcase and Tower are currently developing a new CMOS image sensor optical package.

  11. CAOS-CMOS camera.

    PubMed

    Riza, Nabeel A; La Torre, Juan Pablo; Amin, M Junaid

    2016-06-13

    Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical unit to realize a high dynamic range imager for extreme light contrast conditions. The experimentally demonstrated CAOS-CMOS camera is built using a digital micromirror device, a silicon point-photo-detector with a variable gain amplifier, and a silicon CMOS sensor with a maximum rated 51.3 dB dynamic range. White light imaging of three different brightness simultaneously viewed targets, that is not possible by the CMOS sensor, is achieved by the CAOS-CMOS camera demonstrating an 82.06 dB dynamic range. Applications for the camera include industrial machine vision, welding, laser analysis, automotive, night vision, surveillance and multispectral military systems. PMID:27410361

  12. Correct CMOS IC defect models for quality testing

    NASA Technical Reports Server (NTRS)

    Soden, Jerry M.; Hawkins, Charles F.

    1993-01-01

    Leading edge, high reliability, and low escape CMOS IC test practices have now virtually removed the stuck-at fault model and replaced it with more defect-orientated models. Quiescent power supply current testing (I(sub DDQ)) combined with strategic use of high speed test patterns is the recommended approach to zero defect and high reliability testing goals. This paper reviews the reasons for the change in CMOS IC test practices and outlines an improved CMOS IC test methodology.

  13. Behavior of faulty double BJT BiCMOS logic gates

    NASA Technical Reports Server (NTRS)

    Menon, Sankaran M.; Malaiya, Yashwant K.; Jayasumana, Anura P.

    1992-01-01

    Logic Behavior of a Double BJT BiCMOS device under transistor level shorts and opens is examined. In addition to delay faults, faults that cause the gate to exhibit sequential behavior were observed. Several faults can be detected only by monitoring the current. The faulty behavior of Bipolar (TTL) and CMOS logic families is compared with BiCMOS, to bring out the testability differences.

  14. Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

    NASA Astrophysics Data System (ADS)

    Wang, G. L.; Moeen, M.; Abedin, A.; Kolahdouz, M.; Luo, J.; Qin, C. L.; Zhu, H. L.; Yan, J.; Yin, H. Z.; Li, J. F.; Zhao, C.; Radamson, H. H.

    2013-09-01

    SiGe has been widely used for source/drain (S/D) engineering in pMOSFETs to enhance channel mobility. In this study, selective Si1-xGex growth (0.25 ≤ x ≤ 0.35) with boron concentration of 1-3 × 1020 cm-3 in the process for 22 nm node complementary metal-oxide semiconductor (CMOS) has been investigated and optimized. The growth parameters were carefully tuned to achieve deposition of high quality and highly strained material. The thermal budget was decreased to 800 °C to suppress dopant diffusion, to minimize Si loss in S/D recesses, and to preserve the S/D recess shape. Two layers of Si1-xGex were deposited: a bottom layer with high Ge content (x = 0.35) which filled the recess and a cap layer with low Ge content (x = 0.25) which was elevated in the S/D regions. The elevated SiGe cap layer was intended to be consumed during the Ni-silicidation process in order to avoid strain reduction in the channel region arising from strain relaxation in SiGe S/D. In this study, a kinetic gas model was also applied to predict the pattern dependency of the growth and to determine the epi-profile in different transistor arrays. The input parameters include growth temperature, partial pressures of reactant gases, and chip layout. By using this model, the number of test wafers for epitaxy experiments can be decreased significantly. When the epitaxy process parameters can be readily predicted by the model for epi-profile control in an advanced chip design, fast and cost-effective process development can be achieved.

  15. 15-nW Biopotential LPFs in 0.35- μm CMOS using subthreshold-source-follower Biquads with and without gain compensation.

    PubMed

    Zhang, Tan-Tan; Mak, Pui-In; Vai, Mang-I; Mak, Peng-Un; Law, Man-Kay; Pun, Sio-Hang; Wan, Feng; Martins, Rui P

    2013-10-01

    Most biopotential readout front-ends rely on the g m- C lowpass filter (LPF) for forefront signal conditioning. A small g m realizes a large time constant ( τ = C / g m) suitable for ultra-low-cutoff filtering, saving both power and area. Yet, the noise and linearity can be compromised, given that each g m cell can involve one or several noisy and nonlinear V- I conversions originated from the active devices. This paper proposes the subthreshold-source-follower (SSF) Biquad as a prospective alternative. It features: 1) a very small number of active devices reducing the noise and nonlinearity footsteps; 2) No explicit feedback in differential implementation, and 3) extension of filter order by cascading. This paper presents an in-depth treatment of SSF Biquad in the nW-power regime, analyzing its power and area tradeoffs with gain, linearity and noise. A gain-compensation (GC) scheme addressing the gain-loss problem of NMOS-based SSF Biquad due to the body effect is also proposed. Two 100-Hz 4th-order Butterworth LPFs using the SSF Biquads with and without GC were fabricated in 0.35- μm CMOS. Measurement results show that the non-GC (GC) LPF can achieve a DC gain of -3.7 dB (0 dB), an input-referred noise of 36 μV rms (29 μV rms ), a HD3@60 Hz of -55.2 dB ( - 60.7 dB) and a die size of 0.11 mm² (0.08 mm²). Both LPFs draw 15 nW at 3 V. The achieved figure-of-merits (FoMs) are favorably comparable with the state-of-the-art. PMID:24232630

  16. Auroral electron beams - Electric currents and energy sources

    NASA Astrophysics Data System (ADS)

    Kaufmann, R. L.

    1981-09-01

    The energy sources, electric equipotentials and electric currents associated with auroral electron acceleration observed during rocket flight 18:152 are discussed. Steep flow gradients at the interface between the convection boundary layer and the plasma sheet are considered as the probable source of energy for dayside and dawn and dusk auroras, while it is suggested that the cross tail potential drop may provide an energy source for some midnight auroras. Birkeland currents that flow along distorted field lines are shown possibly to be important in the mechanism that produces U-shaped equipotentials in the ionosphere, as well as unexpected jumps in ionospheric or magnetotail currents and unusual electric fields and plasma drift in the magnetotail. The production of equipotential structures under oppositely directed higher-altitude electric fields is discussed, and it is pointed out that cold ionospheric plasma can enter the structure in a cusp-shaped region where fields are weak. The rocket data reveals that the sudden change in conductivity at the edge of the bright arc and the constancy of the electric field produce sudden changes in the Hall and Pedersen currents. It is concluded that current continuity is satisfied primarily by east-west changes in the electric field or conductivity.

  17. Radiation characteristics of scintillator coupled CMOS APS for radiography conditions

    NASA Astrophysics Data System (ADS)

    Kim, Kwang Hyun; Kim, Soongpyung; Kang, Dong-Won; Kim, Dong-Kie

    2006-11-01

    Under industrial radiography conditions, we analyzed short-term radiation characteristics of scintillator coupled CMOS APS (hereinafter SC CMOS APS). By means of experimentation, the contribution of the transmitted X-ray through the scintillator to the properties of the CMOS APS and the afterimage, generated in the acquired image even at low dose condition, were investigated. To see the transmitted X-ray effects on the CMOS APS, Fein focus™ X-ray machine, two scintillators of Lanex™ Fine and Regular, and two CMOS APS array of RadEye™ were used under the conditions of 50 kV p/1 mAs and 100 kV p/1 mAs. By measuring the transmitted X-ray on signal and Noise Power Spectrum, we analytically examined the generation mechanism of the afterimage, based on dark signal or dark current increase in the sensor, and explained the afterimage in the SC CMOS APS.

  18. A new theory of sources of Birkeland currents

    NASA Technical Reports Server (NTRS)

    Cole, K. D.

    1982-01-01

    An approach to collisionless plasma shows the existence of current orthogonal to B along the low latitude boundary layer of the magnetosphere driven by electric field which is orthogonal to both B and the layer. In this case relationship P perpendicular + (sq B/8 pi) - (sq epsilon E perpendicular/8 pi) = constant holds on a line orthogonal to B and the layer, where epsilon is the dielectric constant of the plasma for electric fields orthogonal to B. Across the geomagnetic tail there flows a current in the direction of the dawn-dusk electric field, and in this case a relationship P perpendicular + (sq B/8 pi) + (sq epsilon E perpendicular/8 pi = constant, holds aong a line orthogonal to E and B. Divergence of both these currents is shown to be a source of Birkeland currents. Some of the boundary layer current is continuous with current across the tail. Electric currents of physically similar origin flow in interplanetary space, and when the magnetosphere interrupts them, additional Birkeland currents are driven.

  19. Current status of the Taiwan Photon Source project

    SciTech Connect

    Chang, Shih-Lin

    2014-03-05

    The progress of establishment of a high brightness and low emittance mid-energy storage ring is reported. The status of the 3 GeV Taiwan Photon Source (TPS) currently under construction will be presented. The progress on the civil construction, manufacturing of machine components, as well as the opportunity of using low emittace synchrotron source and phase I beamlines at TPS will be mentioned. The future planning of phase II beamlines and related research will be sketched. Future developments will be also briefly outlined.

  20. Effective shielding to measure beam current from an ion source.

    PubMed

    Bayle, H; Delferrière, O; Gobin, R; Harrault, F; Marroncle, J; Senée, F; Simon, C; Tuske, O

    2014-02-01

    To avoid saturation, beam current transformers must be shielded from solenoid, quad, and RFQ high stray fields. Good understanding of field distribution, shielding materials, and techniques is required. Space availability imposes compact shields along the beam pipe. This paper describes compact effective concatenated magnetic shields for IFMIF-EVEDA LIPAc LEBT and MEBT and for FAIR Proton Linac injector. They protect the ACCT Current Transformers beyond 37 mT radial external fields. Measurements made at Saclay on the SILHI source are presented. PMID:24593447

  1. Hollow cathode and ion accelerator system for current ion sources

    SciTech Connect

    Aston, G.

    1981-01-01

    A small self-heating hollow cathode has been designed and tested which uses a novel flowing plasma starting concept to eliminate the need for cathode heating elements and low work function insert materials. In a magnetic field free ion source, this cathode has reliably and repeatedly produced arc currents, using argon, of 100 ampere (the power supply limit) at arc voltages of 22 volts. The cathode operates with a high gas stagnation pressure and plasma density to produce field enhanced thermionic emission from the electron emitting surface, a 0.02mm thick rolled tungsten foil cylinder, without appreciable erosion of this surface. Possible applications of larger versions of this hollow cathode for use in neutral beam injector ion sources are discussed. An ion accelerator system has also been designed and tested which combines a unique arrangement of multiple hole and slit apertures to amplify the extracted ion current density by a factor of four during the ion acceleration process.

  2. ULTRA-LOW-ENERGY HIGH-CURRENT ION SOURCE

    SciTech Connect

    Anders, Andre; Yushkov, Georgy Yu.; Baldwin, David A.

    2009-11-20

    The technical objective of the project was to develop an ultra-low-energy, high-intensity ion source (ULEHIIS) for materials processing in high-technology fields including semiconductors, micro-magnetics and optics/opto-electronics. In its primary application, this ion source can be incorporated into the 4Wave thin-film deposition technique called biased target ion-beam deposition (BTIBD), which is a deposition technique based on sputtering (without magnetic field, i.e., not the typical magnetron sputtering). It is a technological challenge because the laws of space charge limited current (Child-Langmuir) set strict limits of how much current can be extracted from a reservoir of ions, such as a suitable discharge plasma. The solution to the problem was an innovative dual-discharge system without the use of extraction grids.

  3. MEG-based imaging of focal neuronal current sources

    SciTech Connect

    Phillips, J.W.; Leahy, R.M.; Mosher, J.C.

    1997-06-01

    The authors describe a new approach to imaging neural current sources from measurements of the magnetoencephalogram (MEG) associated with sensory, motor, or cognitive brain activation. Many previous approaches to this problem have concentrated on the use of weighted minimum norm (WMN) inverse methods. While these methods ensure a unique solution, they do not introduce information specific to the MEG inverse problem, often producing overly smoothed solutions and exhibiting severe sensitivity to noise. The authors describe a Bayesian formulation of the inverse problem in which a Gibbs prior is constructed to reflect the sparse focal nature of neural current sources associated with evoked response data. They demonstrate the method with simulated and experimental phantom data, comparing its performance with several WMN methods.

  4. Top-down fabrication of fully CMOS-compatible silicon nanowire arrays and their integration into CMOS Inverters on plastic.

    PubMed

    Lee, Myeongwon; Jeon, Youngin; Moon, Taeho; Kim, Sangsig

    2011-04-26

    A route to the top-down fabrication of highly ordered and aligned silicon nanowire (SiNW) arrays with degenerately doped source/drain regions from a bulk Si wafer is presented. In this approach, freestanding n- and p-SiNWs with an inverted triangular cross section are obtained using conventional photolithography, crystal orientation dependent wet etching, size reduction oxidation, and ion implantation doping. Based on these n- and p-SiNWs transferred onto a plastic substrate, simple SiNW-based complementary metal-oxide-semiconductor (CMOS) inverters are constructed for the possible applications of these SiNW arrays in integrated circuits on plastic. The static voltage transfer characteristic of the SiNW-based CMOS inverter exhibits a voltage gain of ∼9 V/V and a transition of 0.32 V at an operating voltage of 1.5 V with a full output voltage swing between 0 V and V(DD), and its mechnical bendability indicates good fatigue properties for potential applications of flexible electronics. This novel top-down approach is fully compatible with the current state-of-the-art Si-based CMOS technologies and, therefore, offers greater flexibility in device design for both high-performance and low-power functionality. PMID:21355599

  5. A decaborane ion source for high current implantation

    NASA Astrophysics Data System (ADS)

    Perel, Alex S.; Loizides, William K.; Reynolds, William E.

    2002-02-01

    Progressive semiconductor device scaling in each technology node requires the formation of shallower junctions, and thus lower energy implants. The difficulties associated with extraction and transport of low energy beams often result in a loss in wafer throughput. Implantation of boron using the molecular compound decaborane has been found to allow for the shallow implantation of boron without a significant design change in the implanter. The decaborane molecule has 10 boron atoms and 14 hydrogen atoms. The implanted dose is ten times the electrical dose and the implanted depth is equivalent to the depth of a boron beam at 1/11th of the extraction energy. This advantage can only be exploited with an ion source that does not destroy the fragile molecule. We report on the design of an ion source capable of ionizing decaborane without significant fragmentation of the molecule. After it was shown that the decaborane molecule fragments above 350 °C an ion source was designed to prevent thermal dissociation of the molecule. Competitive boron dose rates were achieved using this source in a commercial high current implanter. In addition, evidence is shown that a decaborane dimer is formed in the ion source and can be implanted.

  6. Physics of Intense Electron Current Sources for Helicity Injection

    NASA Astrophysics Data System (ADS)

    Hinson, E. T.; Barr, J. L.; Bongard, M. W.; Burke, M. G.; Fonck, R. J.; Lewicki, B. T.; Perry, J. M.; Redd, A. J.; Winz, G. R.

    2014-10-01

    DC helicity injection (HI) for non-solenoidal ST startup requires sources of current at the tokamak edge. Since the rate of HI scales with injection voltage, understanding of the physics setting injector impedance is necessary for a predictive model of the HI rate and subsequent growth of Ip. In Pegasus, arc plasma sources are used for current injection. They operate immersed in tokamak edge plasma, and are biased at ~1-2 kV with respect to the vessel to draw current densities J ~ 1 kA/cm2 from an arc plasma cathode. Prior to tokamak formation, impedance data manifests two regimes, one at low current (< 1 kA) with I ~V 3 / 2 , and a higher current mode where I ~V 1 / 2 holds. The impedance in the I ~V 3 / 2 regime is consistent with an electrostatic double layer. Current in the I ~V 1 / 2 regime is linear in arc gas fueling rate, suggesting a space-charge limit set by nedge. In the presence of tokamak plasmas, voltage oscillations of the order 100s of volts are measured during MHD relaxation activity. These fluctuations occur at the characteristic frequencies of the n = 1 and n = 0 MHD activity observed on magnetic probes, and are suggestive of dynamic activity found in LHI simulations in NIMROD. Advanced injector design techniques have allowed higher voltage operation. These include staged shielding to prevent external arcing, and shaped cathodes, which minimize the onset and material damage due to cathode spot formation. Work supported by US DOE Grant DE-FG02-96ER54375.

  7. Improved current control makes inverters the power sources of choice

    SciTech Connect

    Yamamoto, H.; Harada, S.; Ueyama, T.

    1997-02-01

    It is now generally understood that by increasing the operating or switching frequency of a power source the size of the main transformer and main reactor can be shrunk. Thus, a 300-A DC welding power source weighing well under 100 lb can be produced. This makes the inverter power source an ideal choice for applications requiring equipment maneuverability. It is also generally understood that due to higher switching frequencies, a smoother output is obtained from inverter power sources. In the late 1980s, the company developed a new double-inverter power source by which inverted DC weld output is inverted back to AC weld output. This product was the first of its kind in the world. Again, the small compact size of this product was of great interest. Utilizing current waveform control, it was realized that fast response switching from electrode negative to electrode positive could be accurately controlled, offering benefits such as AC GTA welding with high-frequency start only, even at a low welding current. The primary benefit is the ability to limit the electrode positive half cycle to less than 5%. The electrode positive half cycle is responsible for tungsten erosion, which also creates the balling effect of a tungsten electrode. By limiting the electrode positive portion of the AC cycle to a very low level, a rather sharp point can be maintained on the tungsten, which creates a very concentrated, focused arc column. This ability provides excellent joint penetration in fillet welding of aluminum alloys, especially on thick plate. It also reduces the heat-affected zone in AC GTA welding of aluminum.

  8. A CMOS-based on-chip neural interface device equipped with integrated LED array for optogenetics.

    PubMed

    Tokuda, T; Miyatani, T; Maezawa, Y; Kobayashi, T; Noda, T; Sasagawa, K; Ohta, J

    2012-01-01

    A novel CMOS-based neural interface device equipped with an integrated micro light source array was proposed and demonstrated. Target application of the device is optogenetics. GaInN LED array formed on sapphire substrate was successfully assembled with a multifunctional CMOS image sensor which is capable of injecting current via any of the pixel. We demonstrated addressable LED operation with the present device. The device has advantages such as simultaneous multi-site stimulation and on-chip optical imaging, that are not available with previously reported LED array device for optogenetics. PMID:23367087

  9. Heliospheric current sheet inclinations predicted from source surface maps

    NASA Technical Reports Server (NTRS)

    Shodhan, S.; Crooker, N. U.; Hughes, W. J.; Siscoe, G. L.

    1994-01-01

    The inclinations of the neutral line at the ecliptic plane derived from source surface model maps of coronal fields are measured for the interval from June 1976 to March 1992. The mean and median values of 53 deg and 57 deg are close to the average inclinations determined earlier from minimum variance analyses of solar wind measurements at sector boundaries, but the mode falls in the 80 deg - 90 deg bin. This result, which is based on the model assumptions implicit in deriving the source surface maps, predicts that the heliospheric current sheet typically intersects the ecliptic plane nearly at right angles, even without steepening by stream interaction regions. High inclinations dominate the solar cycle for about 7 years around solar maximum. Dips to lower inclination occur near solar minimum, but high variance admits a wide range of inclinations throughout the cycle. Compared to the smooth solar cycle variation of the maximum latitudinal excursion of the neutral line, often treated as the tilt angle of a flat heliospheric current sheet, the noisy variation of the inclinations reflects the degree to which the neutral line deviates from a sine wave, implying warps and corrugations in the current sheet. About a third of the time the neutral line so deviates that it doubles back in longitude.

  10. Renewable energy sources in Bulgaria: Current state and trends

    NASA Astrophysics Data System (ADS)

    Kolev, K.

    The over-dependency of Bulgaria on imported fuel stressed the importance of developing a new energy strategy based on energy saving which includes also using renewable energy sources (RES). The target is the substitution of at least 2 percent of the real primary energy consumption with RES by 2010. The author gives a generalized analysis of the available RES in Bulgaria -solar, wind, geothermal, biomass and mini-hydraulic. The potentialities of each source for its usage as a suitable energy supply are pointed out, as well as the current status of research and implementation work, problems connected with legislation, financing and production of particular facilities. The governmental policy concerning RES is considered briefly. A description is given to the project 'Technical and Economical Assessment of Possibilities for Expansion of the RES-part in the Energy Balance of the Country' developed and started in 1994 in the framework of the PHARE program.

  11. Electric machine and current source inverter drive system

    DOEpatents

    Hsu, John S

    2014-06-24

    A drive system includes an electric machine and a current source inverter (CSI). This integration of an electric machine and an inverter uses the machine's field excitation coil for not only flux generation in the machine but also for the CSI inductor. This integration of the two technologies, namely the U machine motor and the CSI, opens a new chapter for the component function integration instead of the traditional integration by simply placing separate machine and inverter components in the same housing. Elimination of the CSI inductor adds to the CSI volumetric reduction of the capacitors and the elimination of PMs for the motor further improve the drive system cost, weight, and volume.

  12. High current liquid metal ion source using porous tungsten multiemitters.

    PubMed

    Tajmar, M; Vasiljevich, I; Grienauer, W

    2010-12-01

    We recently developed an indium Liquid-Metal-Ion-Source that can emit currents from sub-μA up to several mA. It is based on a porous tungsten crown structure with 28 individual emitters, which is manufactured using Micro-Powder Injection Molding (μPIM) and electrochemical etching. The emitter combines the advantages of internal capillary feeding with excellent emission properties due to micron-size tips. Significant progress was made on the homogeneity of the emission over its current-voltage characteristic as well as on investigating its long-term stability. This LMIS seems very suitable for space propulsion as well as for micro/nano manufacturing applications with greatly increased milling/drilling speeds. This paper summarizes the latest developments on our porous multiemitters with respect to manufacturing, emission properties and long-term testing. PMID:21111260

  13. CMOS VCSEL driver circuit for 25+Gbps/channel short-reach parallel optical links

    NASA Astrophysics Data System (ADS)

    Shibata, Masumi

    This thesis proposes a new CMOS driver for Vertical Cavity Surface Emitting LASER (VCSEL) diode arrays. A VCSEL is a promising light source for optical communication. However, its threshold voltage (1.5V for a 850-nm VCSEL) exceeds the rated supply voltage of nanoscale CMOS technologies. This makes difficult designing a driver sourcing a modulated current to a VCSELs anode directly, an arrangement suitable for low-cost parallel optical links. To overcome this problem, a combination of analog circuit techniques is proposed including a novel pad shield driving technique. A prototype fabricated in a 65-nm CMOS technology achieved 26-Gb/s bit-rate and 1.80-pJ/b power efficiency with an optical modulation amplitude (OMA) of +1.8dBm and 3.1ps-rms jitter when driving a 850-nm 14Gb/s commercial VCSEL. This is the highest-speed anode-driving CMOS VCSEL driver reported to date. Also it has the best power efficiency and the smallest area (0:024 mm2) amongst anode-driving drivers in any process technology.

  14. High-current negative-ion sources for pulsed spallation neutron sources: LBNL workshop, October 1994

    SciTech Connect

    Alonso, J.R.

    1995-09-01

    The neutron scattering community has endorsed the need for a high-power (1 to 5 MW) accelerator-driven source of neutrons for materials research. Properly configured, the accelerator could produce very short (sub-microsecond) bursts of cold neutrons, said time structure offering advantages over the continuous flux from a reactor. The recent cancellation of the ANS reactor project has increased the urgency to develop a comprehensive strategy based on the best technological scenarios. Studies to date have built on the experience from ISIS (the 160 kW source in the UK), and call for a high-current (approx. 100 mA peak) H- source-linac combination injecting into one or more accumulator rings in which beam may be further accelerated. The I to 5 GeV proton beam is extracted in a single turn and brought to the target-moderator stations. The high current, high duty-factor, high brightness and high reliability required of the ion source present a very large challenge to the ion source community. The Workshop reported on here, held in Berkeley in October 1994, analyzed in detail the source requirements for proposed accelerator scenarios, the present performance capabilities of different H- source technologies, and identified necessary R&D efforts to bridge the gap.

  15. High current DC negative ion source for cyclotron

    NASA Astrophysics Data System (ADS)

    Etoh, H.; Onai, M.; Aoki, Y.; Mitsubori, H.; Arakawa, Y.; Sakuraba, J.; Kato, T.; Mitsumoto, T.; Hiasa, T.; Yajima, S.; Shibata, T.; Hatayama, A.; Okumura, Y.

    2016-02-01

    A filament driven multi-cusp negative ion source has been developed for proton cyclotrons in medical applications. In Cs-free operation, continuous H- beam of 10 mA and D- beam of 3.3 mA were obtained stably at an arc-discharge power of 3 kW and 2.4 kW, respectively. In Cs-seeded operation, H- beam current reached 22 mA at a lower arc power of 2.6 kW with less co-extracted electron current. The optimum gas flow rate, which gives the highest H- current, was 15 sccm in the Cs-free operation, while it decreased to 4 sccm in the Cs-seeded operation. The relationship between H- production and the design/operating parameters has been also investigated by a numerical study with KEIO-MARC code, which gives a reasonable explanation to the experimental results of the H- current dependence on the arc power.

  16. High current DC negative ion source for cyclotron.

    PubMed

    Etoh, H; Onai, M; Aoki, Y; Mitsubori, H; Arakawa, Y; Sakuraba, J; Kato, T; Mitsumoto, T; Hiasa, T; Yajima, S; Shibata, T; Hatayama, A; Okumura, Y

    2016-02-01

    A filament driven multi-cusp negative ion source has been developed for proton cyclotrons in medical applications. In Cs-free operation, continuous H(-) beam of 10 mA and D(-) beam of 3.3 mA were obtained stably at an arc-discharge power of 3 kW and 2.4 kW, respectively. In Cs-seeded operation, H(-) beam current reached 22 mA at a lower arc power of 2.6 kW with less co-extracted electron current. The optimum gas flow rate, which gives the highest H(-) current, was 15 sccm in the Cs-free operation, while it decreased to 4 sccm in the Cs-seeded operation. The relationship between H(-) production and the design/operating parameters has been also investigated by a numerical study with KEIO-MARC code, which gives a reasonable explanation to the experimental results of the H(-) current dependence on the arc power. PMID:26932017

  17. Nanopore-CMOS Interfaces for DNA Sequencing.

    PubMed

    Magierowski, Sebastian; Huang, Yiyun; Wang, Chengjie; Ghafar-Zadeh, Ebrahim

    2016-01-01

    DNA sequencers based on nanopore sensors present an opportunity for a significant break from the template-based incumbents of the last forty years. Key advantages ushered by nanopore technology include a simplified chemistry and the ability to interface to CMOS technology. The latter opportunity offers substantial promise for improvement in sequencing speed, size and cost. This paper reviews existing and emerging means of interfacing nanopores to CMOS technology with an emphasis on massively-arrayed structures. It presents this in the context of incumbent DNA sequencing techniques, reviews and quantifies nanopore characteristics and models and presents CMOS circuit methods for the amplification of low-current nanopore signals in such interfaces. PMID:27509529

  18. New progress of high current gasdynamic ion source (invited)

    NASA Astrophysics Data System (ADS)

    Skalyga, V.; Izotov, I.; Golubev, S.; Sidorov, A.; Razin, S.; Vodopyanov, A.; Tarvainen, O.; Koivisto, H.; Kalvas, T.

    2016-02-01

    The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)—the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller's ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma with significant density (up to 8 × 1013 cm-3) and to maintain the main advantages of conventional ECRIS such as high ionization degree and low ion energy. Reaching such high plasma density relies on the fact that the critical density grows with the microwave frequency squared. High microwave power provided the average electron energy on a level of 50-300 eV enough for efficient ionization even at neutral gas pressure range of 10-4-10-3 mbar. Gasdynamic ECRIS has demonstrated a good performance producing high current (100-300 mA) multi-charged ion beams with moderate average charge (Z = 4-5 for argon). Gasdynamic ECRIS has appeared to be especially effective in low emittance hydrogen and deuterium beams formation. Proton beams with current up to 500 emA and RMS emittance below 0.07 π ṡ mm ṡ mrad have been demonstrated in recent experiments.

  19. New progress of high current gasdynamic ion source (invited).

    PubMed

    Skalyga, V; Izotov, I; Golubev, S; Sidorov, A; Razin, S; Vodopyanov, A; Tarvainen, O; Koivisto, H; Kalvas, T

    2016-02-01

    The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)-the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller's ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma with significant density (up to 8 × 10(13) cm(-3)) and to maintain the main advantages of conventional ECRIS such as high ionization degree and low ion energy. Reaching such high plasma density relies on the fact that the critical density grows with the microwave frequency squared. High microwave power provided the average electron energy on a level of 50-300 eV enough for efficient ionization even at neutral gas pressure range of 10(-4)-10(-3) mbar. Gasdynamic ECRIS has demonstrated a good performance producing high current (100-300 mA) multi-charged ion beams with moderate average charge (Z = 4-5 for argon). Gasdynamic ECRIS has appeared to be especially effective in low emittance hydrogen and deuterium beams formation. Proton beams with current up to 500 emA and RMS emittance below 0.07 π ⋅ mm ⋅ mrad have been demonstrated in recent experiments. PMID:26931934

  20. Evaluation of MOBILE-based gate-level pipelining augmenting CMOS with RTDs

    NASA Astrophysics Data System (ADS)

    Nuñez, Juan; Avedillo, María J.; Quintana, José M.

    2011-05-01

    The incorporation of Resonant Tunnel Diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance: higher circuit speed, reduced component count, and/or lowered power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS) is an area of active research. Although some works have focused the evaluation of the advantages of this incorporation, additional work in this direction is required. We compare RTD-CMOS and pure CMOS realizations of a network of logic gates which can be operated in a gate-level pipeline. Significant lower average power is obtained for RTD-CMOS implementations.

  1. A review on high-resolution CMOS delay lines: towards sub-picosecond jitter performance.

    PubMed

    Abdulrazzaq, Bilal I; Abdul Halin, Izhal; Kawahito, Shoji; Sidek, Roslina M; Shafie, Suhaidi; Yunus, Nurul Amziah Md

    2016-01-01

    A review on CMOS delay lines with a focus on the most frequently used techniques for high-resolution delay step is presented. The primary types, specifications, delay circuits, and operating principles are presented. The delay circuits reported in this paper are used for delaying digital inputs and clock signals. The most common analog and digitally-controlled delay elements topologies are presented, focusing on the main delay-tuning strategies. IC variables, namely, process, supply voltage, temperature, and noise sources that affect delay resolution through timing jitter are discussed. The design specifications of these delay elements are also discussed and compared for the common delay line circuits. As a result, the main findings of this paper are highlighting and discussing the followings: the most efficient high-resolution delay line techniques, the trade-off challenge found between CMOS delay lines designed using either analog or digitally-controlled delay elements, the trade-off challenge between delay resolution and delay range and the proposed solutions for this challenge, and how CMOS technology scaling can affect the performance of CMOS delay lines. Moreover, the current trends and efforts used in order to generate output delayed signal with low jitter in the sub-picosecond range are presented. PMID:27104122

  2. Implantable CMOS Biomedical Devices

    PubMed Central

    Ohta, Jun; Tokuda, Takashi; Sasagawa, Kiyotaka; Noda, Toshihiko

    2009-01-01

    The results of recent research on our implantable CMOS biomedical devices are reviewed. Topics include retinal prosthesis devices and deep-brain implantation devices for small animals. Fundamental device structures and characteristics as well as in vivo experiments are presented. PMID:22291554

  3. 200-Mbps optical integrated circuit design and first iteration realizations in 1.2- and 0.8-micron Bi-CMOS technology

    NASA Astrophysics Data System (ADS)

    Snyman, Lukas W.; Chaing, C.-T.; Bogalecki, Alfons; Du Plessis, Monuko; Aharoni, Herzl

    2004-07-01

    A prototype Silicon CMOS Optical Integrated Circuit (Si CMOS OEIC) was designed and simulated using standard 0.8 micron Bi-CMOS silicon integrated circuit technology. The circuit consisted of an integrated silicon light emitting source, an optical wave-guiding structure, two integrated optical detectors and two high-gain CMOS transimpedance analogue amplifiers. Simulations with MicroSim PSpice software predict a utilizable bandwidth capability of up to 220 MHz for the trans-impedance amplifier for detected photo-currents at the input of the amplifier in the range of 1 nA to 100 nA and driving a 10mV to 1 V signal into a 100 kΩ load. First iteration OEIC structures were realised in 1.2 micron CMOS technology for various source-waveguide-detector arrangements. Current signal ranging from 1nA to 1 micro-amp was detected at detectors. The technology seems favorable for first-iteration implementation for digital communications on chip up to 200Mbps.

  4. A high current, short pulse electron source for wakefield accelerators

    SciTech Connect

    Ho, Ching-Hung.

    1992-01-01

    Design studies for the generation of a high current, short pulse electron source for the Argonne Wakefield Accelerator are presented. An L-band laser photocathode rf gun cavity is designed using the computer code URMEL to maximize the electric field on the cathode surface for fixed frequency and rf input power. A new technique using a curved incoming laser wavefront to minimize the space charge effect near the photocathode is studied. A preaccelerator with large iris to minimize wakefield effects is used to boost the drive beam to a useful energy of around 20 MeV for wakefield acceleration experiments. Focusing in the photocathode gun and the preaccelerator is accomplished with solenoids. Beam dynamics simulations throughout the preaccelerator are performed using particle simulation codes TBCI-SF and PARMELA. An example providing a useful set of operation parameters for the Argonne Wakefield Accelerator is given. The effects of the sagitta of the curved beam and laser amplitude and timing jitter effects are discussed. Measurement results of low rf power level bench tests and a high power test for the gun cavity are presented and discussed.

  5. A high current, short pulse electron source for wakefield accelerators

    SciTech Connect

    Ho, Ching-Hung

    1992-12-31

    Design studies for the generation of a high current, short pulse electron source for the Argonne Wakefield Accelerator are presented. An L-band laser photocathode rf gun cavity is designed using the computer code URMEL to maximize the electric field on the cathode surface for fixed frequency and rf input power. A new technique using a curved incoming laser wavefront to minimize the space charge effect near the photocathode is studied. A preaccelerator with large iris to minimize wakefield effects is used to boost the drive beam to a useful energy of around 20 MeV for wakefield acceleration experiments. Focusing in the photocathode gun and the preaccelerator is accomplished with solenoids. Beam dynamics simulations throughout the preaccelerator are performed using particle simulation codes TBCI-SF and PARMELA. An example providing a useful set of operation parameters for the Argonne Wakefield Accelerator is given. The effects of the sagitta of the curved beam and laser amplitude and timing jitter effects are discussed. Measurement results of low rf power level bench tests and a high power test for the gun cavity are presented and discussed.

  6. Low energy CMOS for space applications

    NASA Technical Reports Server (NTRS)

    Panwar, Ramesh; Alkalaj, Leon

    1992-01-01

    The current focus of NASA's space flight programs reflects a new thrust towards smaller, less costly, and more frequent space missions, when compared to missions such as Galileo, Magellan, or Cassini. Recently, the concept of a microspacecraft was proposed. In this concept, a small, compact spacecraft that weighs tens of kilograms performs focused scientific objectives such as imaging. Similarly, a Mars Lander micro-rover project is under study that will allow miniature robots weighing less than seven kilograms to explore the Martian surface. To bring the microspacecraft and microrover ideas to fruition, one will have to leverage compact 3D multi-chip module-based multiprocessors (MCM) technologies. Low energy CMOS will become increasingly important because of the thermodynamic considerations in cooling compact 3D MCM implementations and also from considerations of the power budget for space applications. In this paper, we show how the operating voltage is related to the threshold voltage of the CMOS transistors for accomplishing a task in VLSI with minimal energy. We also derive expressions for the noise margins at the optimal operating point. We then look at a low voltage CMOS (LVCMOS) technology developed at Stanford University which improves the power consumption over conventional CMOS by a couple of orders of magnitude and consider the suitability of the technology for space applications by characterizing its SEU immunity.

  7. Low energy CMOS for space applications

    NASA Astrophysics Data System (ADS)

    Panwar, Ramesh; Alkalaj, Leon

    The current focus of NASA's space flight programs reflects a new thrust towards smaller, less costly, and more frequent space missions, when compared to missions such as Galileo, Magellan, or Cassini. Recently, the concept of a microspacecraft was proposed. In this concept, a small, compact spacecraft that weighs tens of kilograms performs focused scientific objectives such as imaging. Similarly, a Mars Lander micro-rover project is under study that will allow miniature robots weighing less than seven kilograms to explore the Martian surface. To bring the microspacecraft and microrover ideas to fruition, one will have to leverage compact 3D multi-chip module-based multiprocessors (MCM) technologies. Low energy CMOS will become increasingly important because of the thermodynamic considerations in cooling compact 3D MCM implementations and also from considerations of the power budget for space applications. In this paper, we show how the operating voltage is related to the threshold voltage of the CMOS transistors for accomplishing a task in VLSI with minimal energy. We also derive expressions for the noise margins at the optimal operating point. We then look at a low voltage CMOS (LVCMOS) technology developed at Stanford University which improves the power consumption over conventional CMOS by a couple of orders of magnitude and consider the suitability of the technology for space applications by characterizing its SEU immunity.

  8. Envelope tracking CMOS power amplifier with high-speed CMOS envelope amplifier for mobile handsets

    NASA Astrophysics Data System (ADS)

    Yoshida, Eiji; Sakai, Yasufumi; Oishi, Kazuaki; Yamazaki, Hiroshi; Mori, Toshihiko; Yamaura, Shinji; Suto, Kazuo; Tanaka, Tetsu

    2014-01-01

    A high-efficiency CMOS power amplifier (PA) based on envelope tracking (ET) has been reported for a wideband code division multiple access (W-CDMA) and long term evolution (LTE) application. By adopting a high-speed CMOS envelope amplifier with current direction sensing, a 5% improvement in total power-added efficiency (PAE) and a 11 dB decrease in adjacent channel leakage ratio (ACLR) are achieved with a W-CDMA signal. Moreover, the proposed PA achieves a PAE of 25.4% for a 10 MHz LTE signal at an output power (Pout) of 25.6 dBm and a gain of 24 dB.

  9. CCD and CMOS sensors

    NASA Astrophysics Data System (ADS)

    Waltham, Nick

    The charge-coupled device (CCD) has been developed primarily as a compact image sensor for consumer and industrial markets, but is now also the preeminent visible and ultraviolet wavelength image sensor in many fields of scientific research including space-science and both Earth and planetary remote sensing. Today"s scientific or science-grade CCD will strive to maximise pixel count, focal plane coverage, photon detection efficiency over the broadest spectral range and signal dynamic range whilst maintaining the lowest possible readout noise. The relatively recent emergence of complementary metal oxide semiconductor (CMOS) image sensor technology is arguably the most important development in solid-state imaging since the invention of the CCD. CMOS technology enables the integration on a single silicon chip of a large array of photodiode pixels alongside all of the ancillary electronics needed to address the array and digitise the resulting analogue video signal. Compared to the CCD, CMOS promises a more compact, lower mass, lower power and potentially more radiation tolerant camera.

  10. Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Wang, Zujun; Ma, Wuying; Huang, Shaoyan; Yao, Zhibin; Liu, Minbo; He, Baoping; Liu, Jing; Sheng, Jiangkun; Xue, Yuan

    2016-03-01

    The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS) based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU), photo response non-uniformity (PRNU), overall system gain, saturation output, dynamic range (DR), signal to noise ratio (SNR), quantum efficiency (QE), and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.

  11. Single photon detection and localization accuracy with an ebCMOS camera

    NASA Astrophysics Data System (ADS)

    Cajgfinger, T.; Dominjon, A.; Barbier, R.

    2015-07-01

    The CMOS sensor technologies evolve very fast and offer today very promising solutions to existing issues facing by imaging camera systems. CMOS sensors are very attractive for fast and sensitive imaging thanks to their low pixel noise (1e-) and their possibility of backside illumination. The ebCMOS group of IPNL has produced a camera system dedicated to Low Light Level detection and based on a 640 kPixels ebCMOS with its acquisition system. After reminding the principle of detection of an ebCMOS and the characteristics of our prototype, we confront our camera to other imaging systems. We compare the identification efficiency and the localization accuracy of a point source by four different photo-detection devices: the scientific CMOS (sCMOS), the Charge Coupled Device (CDD), the Electron Multiplying CCD (emCCD) and the Electron Bombarded CMOS (ebCMOS). Our ebCMOS camera is able to identify a single photon source in less than 10 ms with a localization accuracy better than 1 μm. We report as well efficiency measurement and the false positive identification of the ebCMOS camera by identifying more than hundreds of single photon sources in parallel. About 700 spots are identified with a detection efficiency higher than 90% and a false positive percentage lower than 5. With these measurements, we show that our target tracking algorithm can be implemented in real time at 500 frames per second under a photon flux of the order of 8000 photons per frame. These results demonstrate that the ebCMOS camera concept with its single photon detection and target tracking algorithm is one of the best devices for low light and fast applications such as bioluminescence imaging, quantum dots tracking or adaptive optics.

  12. Synchronization between two coupled direct current glow discharge plasma sources

    SciTech Connect

    Chaubey, Neeraj; Mukherjee, S.; Sen, A.; Sekar Iyengar, A. N.

    2015-02-15

    Experimental results on the nonlinear dynamics of two coupled glow discharge plasma sources are presented. A variety of nonlinear phenomena including frequency synchronization and frequency pulling are observed as the coupling strength is varied. Numerical solutions of a model representation of the experiment consisting of two coupled asymmetric Van der Pol type equations are found to be in good agreement with the observed results.

  13. Solar wind pressure as a source of ring current development

    NASA Astrophysics Data System (ADS)

    Kalegaev, Vladimir; Vlasova, Natalia

    The ring current development during magnetic storms was studied on the basis of satellite data and theoretical modeling. Comparative analysis of magnetospheric particle fluxes (30-80 keV protons in the near-equatorial region and in the region of isotropic precipitations) measured by low-altitude polar sun-synchronous NOAA satellites (POES 15, 16, 17) during magnetic storms on 21-22.01.2005 and 14-15.12.2006 was carried out. It was obtained that regardless of the intensity of the geomagnetic disturbance, the proton fluxes as well as isotropic boundary and maximum precipitation locations were approximately the same during maximum of two storms. It was shown that ring current development during 21-22.01.2005 magnetic storm was provided by prolonged extremely strong solar wind influence on the Earth's magnetosphere. Extreme pressure pulse during SSC caused intensive trapped particle radial diffusion and subsequent ring current enhancement similar to that taking place due to particle injection from the tail. Ring current development during 14-15.12.2006 was due to IMF southward turning. Magnetospheric compression during SSC was not too strong to create storm-time ring current.

  14. The source of O+ in the storm time ring current

    NASA Astrophysics Data System (ADS)

    Kistler, L. M.; Mouikis, C. G.; Spence, H. E.; Menz, A. M.; Skoug, R. M.; Funsten, H. O.; Larsen, B. A.; Mitchell, D. G.; Gkioulidou, M.; Wygant, J. R.; Lanzerotti, L. J.

    2016-06-01

    A stretched and compressed geomagnetic field occurred during the main phase of a geomagnetic storm on 1 June 2013. During the storm the Van Allen Probes spacecraft made measurements of the plasma sheet boundary layer and observed large fluxes of O+ ions streaming up the field line from the nightside auroral region. Prior to the storm main phase there was an increase in the hot (>1 keV) and more isotropic O+ ions in the plasma sheet. In the spacecraft inbound pass through the ring current region during the storm main phase, the H+ and O+ ions were significantly enhanced. We show that this enhanced inner magnetosphere ring current population is due to the inward adiabatic convection of the plasma sheet ion population. The energy range of the O+ ion plasma sheet that impacts the ring current most is found to be from ~5 to 60 keV. This is in the energy range of the hot population that increased prior to the start of the storm main phase, and the ion fluxes in this energy range only increase slightly during the extended outflow time interval. Thus, the auroral outflow does not have a significant impact on the ring current during the main phase. The auroral outflow is transported to the inner magnetosphere but does not reach high enough energies to affect the energy density. We conclude that the more energetic O+ that entered the plasma sheet prior to the main phase and that dominates the ring current is likely from the cusp.

  15. The Speedster-EXD - A New Event-Triggered Hybrid CMOS X-ray Detector

    NASA Astrophysics Data System (ADS)

    Griffith, Christopher; Falcone, Abe; Prieskorn, Zach; Burrows, David

    2015-04-01

    We present the characterization of a new event driven x-ray hybrid CMOS detector developed by Penn State University in collaboration with Teledyne Imaging Sensors. Hybrid CMOS detectors currently have many advantages over CCDs including lower susceptibility to radiation damage, lower power consumption, and faster read-out time to avoid pile-up. The Speedster-EXD hybrid CMOS detector has many new features that improve upon the previous generation of detectors including two new in-pixel features that reduce noise from known noise sources: (1) a low-noise, high-gain CTIA amplifier to eliminate interpixel capacitance crosstalk and (2) in-pixel CDS subtraction to reduce kTC noise. The most exciting new feature of the Speedster-EXD is an in-pixel comparator that enables read out of only the pixels which contain signal from an x-ray event. The comparator threshold can be set by the user so that only pixels with signal above the set threshold are read out. This comparator feature can increase effective frame rate by orders of magnitude. We present the read noise, dark current, interpixel capacitance, energy resolution, and gain variation measurements of two Speedster-EXD detectors.

  16. Current Status of the SAGA Light Source Commissioning

    SciTech Connect

    Tomimasu, T.; Koda, S.; Iwasaki, Y.; Takabayashi, Y.; Yoshida, K.; Ohgaki, H.

    2007-01-19

    The SAGA Light Source (SAGA-LS) is the third-generation synchrotron light source designed, constructed and operated by Saga Prefecture, the Japanese local government, for the promotion of scientific researches and industrial applications in Kyushu area. The SAGA-LS consists of a 250-MeV electron linac injector and a 1.4-GeV storage ring with eight double-bend (DB) cell and eight 2.93-m long straight sections. The DB cell structure with a distributed dispersion system was chosen to produce a compact and low cost ring of 75.6-m long circumference. The construction budget was 1.94 billion yen for the light source and 1.1 billion yen for the building. The machine installation started on September 29, 2003. The commissioning began on August 24, 2004. The first synchrotron light was observed on November 12. The commissioning goal of 1.4GeV-100mA was achieved on August 25, 2005. The SAGA-LS was opened for users in February 17, 2006.

  17. An efficient current-based logic cell model for crosstalk delay analysis

    NASA Astrophysics Data System (ADS)

    Nazarian, Shahin; Das, Debasish

    2013-04-01

    Logic cell modelling is an important component in the analysis and design of CMOS integrated circuits, mostly due to nonlinear behaviour of CMOS cells with respect to the voltage signal at their input and output pins. A current-based model for CMOS logic cells is presented, which can be used for effective crosstalk noise and delta delay analysis in CMOS VLSI circuits. Existing current source models are expensive and need a new set of Spice-based characterisation, which is not compatible with typical EDA tools. In this article we present Imodel, a simple nonlinear logic cell model that can be derived from the typical cell libraries such as NLDM, with accuracy much higher than NLDM-based cell delay models. In fact, our experiments show an average error of 3% compared to Spice. This level of accuracy comes with a maximum runtime penalty of 19% compared to NLDM-based cell delay models on medium-sized industrial designs.

  18. Design of a high performance CMOS charge pump for phase-locked loop synthesizers

    NASA Astrophysics Data System (ADS)

    Zhiqun, Li; Shuangshuang, Zheng; Ningbing, Hou

    2011-07-01

    A new high performance charge pump circuit is designed and realized in 0.18 μm CMOS process. A wide input ranged rail-to-rail operational amplifier and self-biasing cascode current mirror are used to enable the charge pump current to be well matched in a wide output voltage range. Furthermore, a method of adding a precharging current source is proposed to increase the initial charge current, which will speed up the settling time of CPPLLs. Test results show that the current mismatching can be less than 0.4% in the output voltage range of 0.4 to 1.7 V, with a charge pump current of 100 μA and a precharging current of 70 μA. The average power consumption of the charge pump in the locked condition is around 0.9 mW under a 1.8 V supply voltage.

  19. OLED-on-CMOS integration for optoelectronic sensor applications

    NASA Astrophysics Data System (ADS)

    Vogel, Uwe; Kreye, Daniel; Reckziegel, Sven; Törker, Michael; Grillberger, Christiane; Amelung, Jörg

    2007-02-01

    Highly-efficient, low-voltage organic light emitting diodes (OLEDs) are well suitable for post-processing integration onto the top metal layer of CMOS devices. This has been proven for OLED microdisplays so far. Moreover, OLEDon- CMOS technology may also be excellently suitable for various optoelectronic sensor applications by combining highly efficient emitters, use of low-cost materials and cost-effective manufacturing together with silicon-inherent photodetectors and CMOS circuitry. The use of OLEDs on CMOS substrates requires a top-emitting, low-voltage and highly efficient OLED structure. By reducing the operating voltage for the OLED below 5V, the costs for the CMOS process can be reduced, because a process without high-voltage option can be used. Red, orange, white, green and blue OLED-stacks with doped charge transport layers were prepared on different dualmetal layer CMOS test substrates without active transistor area. Afterwards, the different devices were measured and compared with respect to their performance (current, luminance, voltage, luminance dependence on viewing angle, optical outcoupling etc.). Low operating voltages of 2.4V at 100cd/m2 for the red p-i-n type phosphorescent emitting OLED stack, 2.5V at 100cd/m2 for the orange phosphorescent emitting OLED stack and 3.2V at 100cd/m2 for the white fluorescent emitting OLED have been achieved here. Therefore, those OLED stacks are suitable for use in a CMOS process even within a regular 5V process option. Moreover, the operating voltage achieved so far is expected to be reduced further when using different top electrode materials. Integrating such OLEDs on a CMOS-substrate provide a preferable choice for silicon-based optical microsystems targeted towards optoelectronic sensor applications, as there are integrated light barriers, optocouplers, or lab-onchip devices.

  20. Low Temperature Heat Source Utilization Current and Advanced Technology

    SciTech Connect

    Anderson, James H. Jr.; Dambly, Benjamin W.

    1992-06-01

    Once a geothermal heat source has been identified as having the potential for development, and its thermal, physical, and chemical characteristics have been determined, a method of utilization must be decided upon. This compendium will touch upon some of these concerns, and hopefully will provide the reader with a better understanding of technologies being developed that will be applicable to geothermal development in East Africa, as well as other parts of the world. The appendices contain detailed reports on Down-the-Well Turbo Pump, The Vapor-Turbine Cycle for Geothermal Power Generation, Heat Exchanger Design for Geothermal Power Plants, and a Feasibility Study of Combined Power and Water Desalting Plant Using Hot Geothermal Water. [DJE-2005

  1. Current-free double layers in helicon sources

    NASA Astrophysics Data System (ADS)

    Su, Yu-Jeng; Shaing, K. C.

    2011-10-01

    A model for the formation of a stationary current-free double layer in collisionless plasmas expanding in a magnetic nozzle is presented. The model consists of the dynamics of cold ions, isothermal hot electrons and fere-isothermal, i.e. almost isothermal, cold electrons. It can determine the position and amplitude of the double layer including the jump in cold electron temperature across the layer. The magnitude of the jump is consistent with experimental observations. Plasmas are accelerated mainly by the magnetic nozzle and the contribution from the double layer is small. The important effects of the ion charge state Z on the flow speed at the nozzle throat and at the exit are also discussed. It is found that the Mach number at the magnetic nozzle throat is \\sqrt Z which can be tested in experiments. The exit velocity also scales as \\sqrt Z . To increase the thrust power, the ion charge state Z could be an important parameter.

  2. Ring energy and current considerations for spallation neutron source

    SciTech Connect

    Blumberg, L.N.

    1994-04-01

    The most desirable energy E{sub o} of protons from the synchrotron and thus beam current {bar I} to produced a given beam power P{sub B} involves a balanced consideration of neutron production capability, accelerator beam stability, user requirements, and cost considerations. The present solution consists of two 3.6-GeV rings with a 600-MeV Linac injector, a compromise between conflicting factors of cost and technical concern. The authors believe that the design is a conservative one. They could increase the beam energy and/or the repetition rate and thereby decrease the requirement for the number of protons N{sub o} in the ring which in the present design is an extrapolation of about a factor of 7 from existing ring intensities. However, the specified ring acceptance appears quite adequate to contain the required 1.45 10{sup 14} protons/ring and the resulting loss in the target window and target are reasonable. The beam power and current are indeed modest in terms of window and target integrity compared to the 200 MW, 200mA 1-GeV design for the APT. The two-ring approach also offers several practical advantages -- the project is stageable in the sense that only one ring may be required initially to achieve P{sub B} = 2.5 MW power on the target with subsequent expansion to 5 MW with addition of the second ring. Two rings also provide additional reliability in the sense that the user program need not be interrupted by failure of one ring.

  3. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging

    NASA Astrophysics Data System (ADS)

    Esposito, M.; Anaxagoras, T.; Konstantinidis, A. C.; Zheng, Y.; Speller, R. D.; Evans, P. M.; Allinson, N. M.; Wells, K.

    2014-07-01

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  4. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging.

    PubMed

    Esposito, M; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Evans, P M; Allinson, N M; Wells, K

    2014-07-01

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  5. Solar quiet day ionospheric source current in the West African region

    PubMed Central

    Obiekezie, Theresa N.; Okeke, Francisca N.

    2012-01-01

    The Solar Quiet (Sq) day source current were calculated using the magnetic data obtained from a chain of 10 magnetotelluric stations installed in the African sector during the French participation in the International Equatorial Electrojet Year (IEEY) experiment in Africa. The components of geomagnetic field recorded at the stations from January–December in 1993 during the experiment were separated into the source and (induced) components of Sq using Spherical Harmonics Analysis (SHA) method. The range of the source current was calculated and this enabled the viewing of a full year’s change in the source current system of Sq. PMID:25685434

  6. Solar quiet day ionospheric source current in the West African region.

    PubMed

    Obiekezie, Theresa N; Okeke, Francisca N

    2013-05-01

    The Solar Quiet (Sq) day source current were calculated using the magnetic data obtained from a chain of 10 magnetotelluric stations installed in the African sector during the French participation in the International Equatorial Electrojet Year (IEEY) experiment in Africa. The components of geomagnetic field recorded at the stations from January-December in 1993 during the experiment were separated into the source and (induced) components of Sq using Spherical Harmonics Analysis (SHA) method. The range of the source current was calculated and this enabled the viewing of a full year's change in the source current system of Sq. PMID:25685434

  7. A Novel Current Angle Control Scheme in a Current Source Inverter Fed Permanent Magnet Synchronous Motor Drive for Automotive Applications

    SciTech Connect

    Tang, Lixin; Su, Gui-Jia

    2011-01-01

    This paper describes a novel speed control scheme to operate a current source inverter (CSI) driven surface-mounted permanent magnet synchronous machine (SPMSM) for hybrid electric vehicles (HEVs) applications. The idea is to use the angle of the current vector to regulate the rotor speed while keeping the two dc-dc converter power switches on all the time to boost system efficiency. The effectiveness of the proposed scheme was verified with a 3 kW CSI-SPMSM drive prototype.

  8. An excitation signal source with anti-interference ability for eddy current testing

    NASA Astrophysics Data System (ADS)

    Jiang, Guodong; Li, Po

    2015-02-01

    An eddy current excitation signal source was designed based on the linear control theory. By analyzing the interference and characteristics of signal source, a multi-input-single-output (MISO) feedback control system was designed and created using a lock-in amplifier, and an eddy current sensor was applied in the feedback loop of the system. As a result, the noise in the loop circuit was suppressed; this resolved the current instability problem in eddy current sensor. Furthermore, a mathematical model was established, and the stability and bandwidth of the system were verified by simulations. Compared with the traditional signal sources, experimental results show that this signal source had steadier current output, smaller temperature drift and stronger load capability. Therefore, the foil thickness measurement based on this signal source had a very high accuracy.

  9. Improved Signal Chains for Readout of CMOS Imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata; Hancock, Bruce; Cunningham, Thomas

    2009-01-01

    An improved generic design has been devised for implementing signal chains involved in readout from complementary metal oxide/semiconductor (CMOS) image sensors and for other readout integrated circuits (ICs) that perform equivalent functions. The design applies to any such IC in which output signal charges from the pixels in a given row are transferred simultaneously into sampling capacitors at the bottoms of the columns, then voltages representing individual pixel charges are read out in sequence by sequentially turning on column-selecting field-effect transistors (FETs) in synchronism with source-follower- or operational-amplifier-based amplifier circuits. The improved design affords the best features of prior source-follower-and operational- amplifier-based designs while overcoming the major limitations of those designs. The limitations can be summarized as follows: a) For a source-follower-based signal chain, the ohmic voltage drop associated with DC bias current flowing through the column-selection FET causes unacceptable voltage offset, nonlinearity, and reduced small-signal gain. b) For an operational-amplifier-based signal chain, the required bias current and the output noise increase superlinearly with size of the pixel array because of a corresponding increase in the effective capacitance of the row bus used to couple the sampled column charges to the operational amplifier. The effect of the bus capacitance is to simultaneously slow down the readout circuit and increase noise through the Miller effect.

  10. Simple voltage-controlled current source for wideband electrical bioimpedance spectroscopy: circuit dependences and limitations

    NASA Astrophysics Data System (ADS)

    Seoane, F.; Macías, R.; Bragós, R.; Lindecrantz, K.

    2011-11-01

    In this work, the single Op-Amp with load-in-the-loop topology as a current source is revisited. This circuit topology was already used as a voltage-controlled current source (VCCS) in the 1960s but was left unused when the requirements for higher frequency arose among the applications of electrical bioimpedance (EBI). The aim of the authors is not only limited to show that with the currently available electronic devices it is perfectly viable to use this simple VCCS topology as a working current source for wideband spectroscopy applications of EBI, but also to identify the limitations and the role of each of the circuit components in the most important parameter of a current for wideband applications: the output impedance. The study includes the eventual presence of a stray capacitance and also an original enhancement, driving with current the VCCS. Based on the theoretical analysis and experimental measurements, an accurate model of the output impedance is provided, explaining the role of the main constitutive elements of the circuit in the source's output impedance. Using the topologies presented in this work and the proposed model, any electronic designer can easily implement a simple and efficient current source for wideband EBI spectroscopy applications, e.g. in this study, values above 150 kΩ at 1 MHz have been obtained, which to the knowledge of the authors are the largest values experimentally measured and reported for a current source in EBI at this frequency.

  11. Relationship between IBICC imaging and SEU in CMOS ICs

    SciTech Connect

    Sexton, F.W.; Horn, K.M.; Doyle, B.L.; Laird, J.S.; Cholewa, M.; Saint, A.; Legge, G.J.F.

    1993-03-01

    Ion-beam-induced charge-collection (IBICC) images of the TA670 16K-bit CMOS SRAM are analyzed and compared to previous SEU images. Enhanced charge collection was observed in the n-source/drains regions consistent with bipolar amplification or shunting.

  12. Relationship between IBICC imaging and SEU in CMOS ICs

    SciTech Connect

    Sexton, F.W.; Horn, K.M.; Doyle, B.L. ); Laird, J.S.; Cholewa, M.; Saint, A.; Legge, G.J.F. )

    1993-01-01

    Ion-beam-induced charge-collection (IBICC) images of the TA670 16K-bit CMOS SRAM are analyzed and compared to previous SEU images. Enhanced charge collection was observed in the n-source/drains regions consistent with bipolar amplification or shunting.

  13. Discontinuity interaction and anomalous source models in through transmission eddy current testing

    SciTech Connect

    Mergelas, B.J.; Atherton, D.L.

    1996-01-01

    Growing interest in the detection of external, axially aligned stress corrosion cracks in ferromagnetic oil and gas transmission pipelines, has prompted a detailed investigation of discontinuity interactions in remote field eddy current (RFEC) testing. Experimental measurements and numerical modeling were undertaken to study discontinuity interactions in a single through-wall transmission geometry for ferromagnetic and nonferromagnetic pipes. Anomalous source models have been introduced in order to explain the responses of axial discontinuities to circumferential eddy currents or circumferential AC magnetic fields. In nonferromagnetic material, discontinuity responses may be modeled by two types of anomalous eddy current sources. In ferromagnetic materials, an anomalous magnetization source is useful for explaining discontinuity response.

  14. High current Cu3P liquid metal ion source using a novel extractor configuration

    NASA Astrophysics Data System (ADS)

    Higuchi-Rusli, R. H.; Corelli, J. C.

    1987-12-01

    It has been found that by utilizing a sharp needle for the extractor electrode in close proximity to the source tip wetted with Cu3P liquid alloy, a large increase (factor ˜300) in ion current is observed in comparison to standard liquid metal ion sources (LMIS's). In standard previously used LMIS's the extractor electrode was a flat plane with a circular hole centered on the source needle tip. This new high current source has important applications in focused and broad ion beam deposition systems.

  15. Simulation of dark current and dark current-induced background photons in the Thomson scattering X-ray source

    NASA Astrophysics Data System (ADS)

    Zheng, Lianmin; Du, Yingchao; Huang, Wenhui; Tang, Chuanxiang

    2015-11-01

    A model of dark current generation in the photocathode radio-frequency (RF) gun is established in the Thomson scattering X-ray source, and dark current transport and losses along the beamline are simulated. A velocity bunching cavity is added between the RF gun and the first linac to achieve the longitudinal compression of the photoelectron bunches. Given the longitudinal acceleration and the transverse focusing of the bunching cavity, the dark current electrons with bunching are approximately three times more than those without bunching, and this condition aggravates the harm to the operation of the photoinjector. Numerous dark current electrons around the electron-laser interaction section hit against the pipe inner wall and two laser focusing mirrors, producing a large number of background photons. A simulation of the bremsstrahlung process using an MCNP code is presented, showing that the background photon yield is less than 2.1% of the scattering photon yield, which is acceptable for our application.

  16. Large-area low-temperature ultrananocrystaline diamond (UNCD) films and integration with CMOS devices for monolithically integrated diamond MEMD/NEMS-CMOS systems.

    SciTech Connect

    Sumant, A.V.; Auciello, O.; Yuan, H.-C; Ma, Z.; Carpick, R. W.; Mancini, D. C.; Univ. of Wisconsin; Univ. of Pennsylvania

    2009-05-01

    Because of exceptional mechanical, chemical, and tribological properties, diamond has a great potential to be used as a material for the development of high-performance MEMS and NEMS such as resonators and switches compatible with harsh environments, which involve mechanical motion and intermittent contact. Integration of such MEMS/NEMS devices with complementary metal oxide semiconductor (CMOS) microelectronics will provide a unique platform for CMOS-driven commercial MEMS/NEMS. The main hurdle to achieve diamond-CMOS integration is the relatively high substrate temperatures (600-800 C) required for depositing conventional diamond thin films, which are well above the CMOS operating thermal budget (400 C). Additionally, a materials integration strategy has to be developed to enable diamond-CMOS integration. Ultrananocrystalline diamond (UNCD), a novel material developed in thin film form at Argonne, is currently the only microwave plasma chemical vapor deposition (MPCVD) grown diamond film that can be grown at 400 C, and still retain exceptional mechanical, chemical, and tribological properties comparable to that of single crystal diamond. We have developed a process based on MPCVD to synthesize UNCD films on up to 200 mm in diameter CMOS wafers, which will open new avenues for the fabrication of monolithically integrated CMOS-driven MEMS/NEMS based on UNCD. UNCD films were grown successfully on individual Si-based CMOS chips and on 200 mm CMOS wafers at 400 C in a MPCVD system, using Ar-rich/CH4 gas mixture. The CMOS devices on the wafers were characterized before and after UNCD deposition. All devices were performing to specifications with very small degradation after UNCD deposition and processing. A threshold voltage degradation in the range of 0.08-0.44V and transconductance degradation in the range of 1.5-9% were observed.

  17. Four-dimensional ultrasound current source density imaging of a dipole field

    NASA Astrophysics Data System (ADS)

    Wang, Z. H.; Olafsson, R.; Ingram, P.; Li, Q.; Qin, Y.; Witte, R. S.

    2011-09-01

    Ultrasound current source density imaging (UCSDI) potentially transforms conventional electrical mapping of excitable organs, such as the brain and heart. For this study, we demonstrate volume imaging of a time-varying current field by scanning a focused ultrasound beam and detecting the acoustoelectric (AE) interaction signal. A pair of electrodes produced an alternating current distribution in a special imaging chamber filled with a 0.9% NaCl solution. A pulsed 1 MHz ultrasound beam was scanned near the source and sink, while the AE signal was detected on remote recording electrodes, resulting in time-lapsed volume movies of the alternating current distribution.

  18. Letter Report on 500 nA Pulsed Current from Field Ionization Source

    SciTech Connect

    Ellsworth, Jennifer L.

    2013-12-12

    We recently produced a milestone 500 nA of pulsed current using 40 Ir field ionizer electrodes in our ion source. In conclusion, we have produced the milestone pulsed current of 500 nA using 40 electrochemically etched iridium tips in a field ionization source. The pulsed current output is repeatable and scales as expected with gas fill pressure and bias voltage. We expect these current will be sufficient to produce neutral yields of 1∙107 DT n/s.

  19. Large area CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Turchetta, R.; Guerrini, N.; Sedgwick, I.

    2011-01-01

    CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

  20. Measurements of Si hybrid CMOS x-ray detector characteristics

    NASA Astrophysics Data System (ADS)

    Bongiorno, Stephen D.; Falcone, Abraham D.; Burrows, David N.; Cook, Robert

    2010-07-01

    The recent development of active pixel sensors as X-Ray focal plane arrays will place them in contention with CCDs on future satellite missions. Penn State University (PSU) is working with Teledyne Imaging Sensors (TIS) to develop X-Ray Hybrid CMOS devices (HCDs), a type of active pixel sensor with fast frame rates, adaptable readout timing and geometry, low power consumption, and inherent radiation hardness. CCDs have been used with great success on the current generation of X-Ray telescopes (e.g. Chandra, XMM, Suzaku, and Swift). However, their bucket-brigade readout architecture, which transfers charge across the chip with discrete component readout electronics, results in clockrate limited readout speeds that cause pileup (saturation) of bright sources and an inherent susceptibility to radiation induced displacement damage that limits mission lifetime. In contrast, HCDs read pixels through the detector substrate with low power, on-chip readout integrated circuits. Faster frame rates, achieved with adaptable readout timing and geometry, will allow the next generation's larger effective area telescopes to observe brighter sources free of pileup. In HCDs, radiation damaged lattice sites affect a single pixel instead of an entire row. The PSU X-ray group is currently testing 4 Teledyne HCDs, with low cross-talk CTIA devices in development. We will report laboratory measurements of HCD readnoise, interpixel-capacitance and its impact on event selection, linearity, and energy resolution as a function of energy.

  1. Operation and biasing for single device equivalent to CMOS

    DOEpatents

    Welch, James D.

    2001-01-01

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  2. Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS

    NASA Astrophysics Data System (ADS)

    Takagi, Shin-ichi; Mizuno, Tomohisa; Tezuka, Tsutomu; Sugiyama, Naoharu; Numata, Toshinori; Usuda, Koji; Moriyama, Yoshihiko; Nakaharai, Shu; Koga, Junji; Tanabe, Akihito; Maeda, Tatsuro

    2004-03-01

    Strained-Si-on-insulator (strained-SOI) CMOS is a promising device structure for satisfying requirements of both high current drive and low supply voltage under sub-100 nm nodes, because of the combination of advantages of SOI MOSFETs and high mobility strained-Si channels. In this paper, we present the concept, the device structures and the fabrication techniques of strained-SOI CMOS. We introduce our original fabrication method of strained-SOI substrates, called the Ge condensation technique. It is experimentally shown that strained-SOI CMOS has higher electron and hole mobility and that strained-SOI CMOS ring oscillators successfully operate with the performance enhancement of 30-70% against conventional SOI CMOS ones.

  3. The total dose effects on the 1/f noise of deep submicron CMOS transistors

    NASA Astrophysics Data System (ADS)

    Rongbin, Hu; Yuxin, Wang; Wu, Lu

    2014-02-01

    Using 0.18 μm CMOS transistors, the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO2 layers, which induces a current leakage passage, increasing the 1/f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion.

  4. Current knowledge of US metal and nonmetal miner health: Current and potential data sources for analysis of miner health status

    PubMed Central

    Yeoman, K. M.; Halldin, C. N.; Wood, J.; Storey, E.; Johns, D.; Laney, A. S.

    2016-01-01

    ABSTRACT Little is known about the current health status of US metal and nonmetal (MNM) miners, in part because no health surveillance systems exist for this population. The National Institute for Occupational Safety and Health (NIOSH) is developing a program to characterize burden of disease among MNM miners. This report discusses current knowledge and potential data sources of MNM miner health. Recent national surveys were analyzed, and literature specific to MNM miner health status was reviewed. No robust estimates of disease prevalence were identified, and national surveys did not provide information specific to MNM miners. Because substantial gaps exist in the understanding of MNM miners' current health status, NIOSH plans to develop a health surveillance program for this population to guide intervention efforts to reduce occupational and personal risks for chronic illness. PMID:25658684

  5. A linearly controlled direct-current power source for high-current inductive loads in a magnetic suspension wind tunnel

    NASA Technical Reports Server (NTRS)

    Tripp, John S.; Daniels, Taumi S.

    1990-01-01

    The NASA Langley 6 inch magnetic suspension and balance system (MSBS) requires an independently controlled bidirectional DC power source for each of six positioning electromagnets. These electromagnets provide five-degree-of-freedom control over a suspended aerodynamic test model. Existing power equipment, which employs resistance coupled thyratron controlled rectifiers as well as AC to DC motor generator converters, is obsolete, inefficient, and unreliable. A replacement six phase bidirectional controlled bridge rectifier is proposed, which employs power MOSFET switches sequenced by hybrid analog/digital circuits. Full load efficiency is 80 percent compared to 25 percent for the resistance coupled thyratron system. Current feedback provides high control linearity, adjustable current limiting, and current overload protection. A quenching circuit suppresses inductive voltage impulses. It is shown that 20 kHz interference from positioning magnet power into MSBS electromagnetic model position sensors results predominantly from capacitively coupled electric fields. Hence, proper shielding and grounding techniques are necessary. Inductively coupled magnetic interference is negligible.

  6. CMOS Integrated Carbon Nanotube Sensor

    SciTech Connect

    Perez, M. S.; Lerner, B.; Boselli, A.; Lamagna, A.; Obregon, P. D. Pareja; Julian, P. M.; Mandolesi, P. S.; Buffa, F. A.

    2009-05-23

    Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

  7. Spin current source based on a quantum point contact with local spin-orbit interaction

    SciTech Connect

    Nowak, M. P.; Szafran, B.

    2013-11-11

    Proposal for construction of a source of spin-polarized current based on quantum point contact (QPC) with local spin-orbit interaction is presented. We show that spin-orbit interaction present within the narrowing acts like a spin filter. The spin polarization of the current is discussed as a function of the Fermi energy and the width of the QPC.

  8. Monolithic CMOS imaging x-ray spectrometers

    NASA Astrophysics Data System (ADS)

    Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

    2014-07-01

    The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and

  9. Current Source Based on H-Bridge Inverter with Output LCL Filter

    NASA Astrophysics Data System (ADS)

    Blahnik, Vojtech; Talla, Jakub; Peroutka, Zdenek

    2015-09-01

    The paper deals with a control of current source with an LCL output filter. The controlled current source is realized as a single-phase inverter and output LCL filter provides low ripple of output current. However, systems incorporating LCL filters require more complex control strategies and there are several interesting approaches to the control of this type of converter. This paper presents the inverter control algorithm, which combines model based control with a direct current control based on resonant controllers and single-phase vector control. The primary goal is to reduce the current ripple and distortion under required limits and provides fast and precise control of output current. The proposed control technique is verified by measurements on the laboratory model.

  10. A BiCMOS integrated charge to amplitude converter

    SciTech Connect

    Gallin-Martel, L.; Pouxe, J.; Rossetto, O.

    1996-12-31

    This paper describes a fast two channel gated charge to amplitude converter (QAC) which has been designed with the 1.2 {mu}m BiCMOS technology from AMS (Austria Mikro Systeme). It can integrate fast negative impulse currents up to 100 mA. Associated with an audio 18 bit low cost ADC, it can easily be used to make a 12 to 13 bit QDC. The problems of current to current conversion, pedestal and offset stability are discussed.

  11. Progress and future developments of high current ion source for neutral beam injector in the ASIPP

    SciTech Connect

    Hu, Chundong; Xie, Yahong Xie, Yuanlai; Liu, Sheng; Liu, Zhimin; Xu, Yongjian; Liang, Lizhen; Sheng, Peng; Jiang, Caichao

    2015-04-08

    A high current hot cathode bucket ion source, which based on the US long pulse ion source is developed in Institute of Plasma Physics, Chinese Academy of Sciences. The ion source consists of a bucket plasma generator with multi-pole cusp fields and a set of tetrode accelerator with slit apertures. So far, four ion sources are developed and conditioned on the ion source test bed. 4 MW hydrogen beam with beam energy of 80 keV is extracted. In Aug. 2013, EAST NBI 1 with two ion source installed on the EAST, and achieved H-mode plasma with NBI injection for the first time. In order to achieve stable long pulse operation of high current ion source and negative ion source research, the RF ion source with 200 mm diameter and 120 mm depth driver is designed and developed. The first RF plasma generated with 2 kW power of 1 MHz frequency. More of the RF plasma tests and negative source relative research need to do in the future.

  12. A Fast Greedy Sparse Method of Current Sources Reconstruction for Ventricular Torsion Detection

    NASA Astrophysics Data System (ADS)

    Bing, Lu; Jiang, Shiqin; Chen, Mengpei; Zhao, Chen; Grönemeyer, D.; Hailer, B.; Van Leeuwen, P.

    2015-09-01

    A fast greedy sparse (FGS) method of cardiac equivalent current sources reconstruction is developed for non-invasive detection and quantitative analysis of individual left ventricular torsion. The cardiac magnetic field inverse problem is solved based on a distributed source model. The analysis of real 61-channel magnetocardiogram (MCG) data demonstrates that one or two dominant current source with larger strength can be identified efficiently by the FGS algorithm. Then, the left ventricle torsion during systole is examined on the basis of x, y and z coordination curves and angle change of reconstructed dominant current sources. The advantages of this method are non-invasive, visible, with higher sensitivity and resolution. It may enable the clinical detection of cardiac systolic and ejection dysfunction.

  13. Current Situation for Management of Disused Sealed Radioactive Sources in Japan - 13025

    SciTech Connect

    Kusama, Keiji; Miyamoto, Yoichi

    2013-07-01

    As for the Sealed Radioactive Source currently used in Japan, many of them are imported from overseas. The U.S., Canada, Germany, the Netherlands, Belgium and Czech Republic are the main exporting States. Many of disused sealed radioactive sources are being returned to exporting States. The sealed radioactive sources which cannot be returned to exporting States are appropriately kept in the domestic storage facility. So, there are not main problem on the long term management of disused sealed radioactive sources in Japan. However, there are some difficulties on repatriate. One is reservation of a means of transport. The sea mail which conveys radioactive sources owing to reduction of movement of international cargo is decreasing in number. And there is a denial of shipment. Other one is that the manufacturer has already resigned from the work and cannot return disused sealed radioactive sources, or a manufacturer cannot specify and disused sources cannot be returned. The disused sealed radioactive source which cannot be repatriated is a little in term of radioactivity. As for the establishment of national measure of final disposal facility for disused sealed radioactive sources, in Japan, it is not yet installed with difficulty. Since there are many countries for which installation of a final disposal facility for disused sealed radioactive sources is difficult, the source manufacture country should respond positively to return the source which was manufactured and sold in the past. (authors)

  14. RAMPING UP THE SNS BEAM CURRENT WITH THE LBNL BASELINE H- SOURCE

    SciTech Connect

    Stockli, Martin P; Han, Baoxi; Murray Jr, S N; Newland, Denny J; Pennisi, Terry R; Santana, Manuel; Welton, Robert F

    2009-01-01

    Over the last two years the Spallation Neutron Source (SNS) has ramped up the repetition rate, pulse length, and the beam current to reach 540 kW, which has challenged many subsystems including the H- source designed and built by Lawrence Berkeley National Laboratory (LBNL). This paper discusses the major modifications of the H- source implemented to consistently and routinely output the beam current required by the SNS beam power ramp up plan. At this time, 32 mA LINAC beam current are routinely produced, which meets the requirement for 690 kW planned for end of 2008. In June 2008, a 14-day production run used 37 mA, which is close to the 38 mA required for 1.44 MW. A medium energy beam transport (MEBT) beam current of 46 mA was demonstrated on September 2, 2008.

  15. Measuring the X-ray quantum efficiency of a hybrid CMOS detector with 55Fe

    NASA Astrophysics Data System (ADS)

    Bongiorno, S. D.; Falcone, A. D.; Prieskorn, Z.; Griffith, C.; Burrows, D. N.

    2015-06-01

    Charge coupled devices (CCDs) are currently the workhorse focal plane arrays operating aboard many orbiting astrophysics X-ray telescopes, e.g. Chandra, XMM-Newton, Swift, and Suzaku. In order to meet the count rate, power, and mission duration requirements defined by next-generation X-ray telescopes, future detectors will need to be read out faster, consume less power, and be more resistant to radiation and micrometeoroid damage than current-generation devices. The hybrid CMOS detector (HCD), a type of active pixel sensor, is currently being developed to meet these requirements. With a design architecture that involves bump bonding two semiconductor substrates together at the pixel level, these devices exhibit both the high read speed and low power consumption of CMOS readout circuitry and the high quantum efficiency (QE) of a deeply depleted silicon absorber. These devices are expected to exhibit the same excellent, high-energy quantum efficiency (QE) as deep-depletion CCDs (QE > 0.9 at 6 keV), while at the same time exhibiting superior readout flexibility, power consumption, and radiation hardness than CCDs. In this work we present a QE model for a Teledyne Imaging Sensors HyViSI HCD, which predicts QE=96% at 55Fe source energies (5.89 and 6.49 keV). We then present a QE measurement of the modeled device at the same energies, which shows QE=97±5% and is in good agreement with the model.

  16. Representation of bioelectric current sources using Whitney elements in the finite element method.

    PubMed

    Tanzer, I Oğuz; Järvenpää, Seppo; Nenonen, Jukka; Somersalo, Erkki

    2005-07-01

    Bioelectric current sources of magneto- and electroencephalograms (MEG, EEG) are usually modelled with discrete delta-function type current dipoles, despite the fact that the currents in the brain are naturally continuous throughout the neuronal tissue. In this study, we represent bioelectric current sources in terms of Whitney-type elements in the finite element method (FEM) using a tetrahedral mesh. The aim is to study how well the Whitney elements can reproduce the potential and magnetic field patterns generated by a point current dipole in a homogeneous conducting sphere. The electric potential is solved for a unit sphere model with isotropic conductivity and magnetic fields are calculated for points located on a cap outside the sphere. The computed potential and magnetic field are compared with analytical solutions for a current dipole. Relative difference measures between the FEM and analytical solutions are less than 1%, suggesting that Whitney elements as bioelectric current sources are able to produce the same potential and magnetic field patterns as the point dipole sources. PMID:15972978

  17. The differential Howland current source with high signal to noise ratio for bioimpedance measurement system

    SciTech Connect

    Liu, Jinzhen; Li, Gang; Lin, Ling; Qiao, Xiaoyan; Wang, Mengjun; Zhang, Weibo

    2014-05-15

    The stability and signal to noise ratio (SNR) of the current source circuit are the important factors contributing to enhance the accuracy and sensitivity in bioimpedance measurement system. In this paper we propose a new differential Howland topology current source and evaluate its output characters by simulation and actual measurement. The results include (1) the output current and impedance in high frequencies are stabilized after compensation methods. And the stability of output current in the differential current source circuit (DCSC) is 0.2%. (2) The output impedance of two current circuits below the frequency of 200 KHz is above 1 MΩ, and below 1 MHz the output impedance can arrive to 200 KΩ. Then in total the output impedance of the DCSC is higher than that of the Howland current source circuit (HCSC). (3) The SNR of the DCSC are 85.64 dB and 65 dB in the simulation and actual measurement with 10 KHz, which illustrates that the DCSC effectively eliminates the common mode interference. (4) The maximum load in the DCSC is twice as much as that of the HCSC. Lastly a two-dimensional phantom electrical impedance tomography is well reconstructed with the proposed HCSC. Therefore, the measured performance shows that the DCSC can significantly improve the output impedance, the stability, the maximum load, and the SNR of the measurement system.

  18. Representation of bioelectric current sources using Whitney elements in the finite element method

    NASA Astrophysics Data System (ADS)

    Oguz Tanzer, I.; Järvenpää, Seppo; Nenonen, Jukka; Somersalo, Erkki

    2005-07-01

    Bioelectric current sources of magneto- and electroencephalograms (MEG, EEG) are usually modelled with discrete delta-function type current dipoles, despite the fact that the currents in the brain are naturally continuous throughout the neuronal tissue. In this study, we represent bioelectric current sources in terms of Whitney-type elements in the finite element method (FEM) using a tetrahedral mesh. The aim is to study how well the Whitney elements can reproduce the potential and magnetic field patterns generated by a point current dipole in a homogeneous conducting sphere. The electric potential is solved for a unit sphere model with isotropic conductivity and magnetic fields are calculated for points located on a cap outside the sphere. The computed potential and magnetic field are compared with analytical solutions for a current dipole. Relative difference measures between the FEM and analytical solutions are less than 1%, suggesting that Whitney elements as bioelectric current sources are able to produce the same potential and magnetic field patterns as the point dipole sources.

  19. The differential Howland current source with high signal to noise ratio for bioimpedance measurement system

    NASA Astrophysics Data System (ADS)

    Liu, Jinzhen; Qiao, Xiaoyan; Wang, Mengjun; Zhang, Weibo; Li, Gang; Lin, Ling

    2014-05-01

    The stability and signal to noise ratio (SNR) of the current source circuit are the important factors contributing to enhance the accuracy and sensitivity in bioimpedance measurement system. In this paper we propose a new differential Howland topology current source and evaluate its output characters by simulation and actual measurement. The results include (1) the output current and impedance in high frequencies are stabilized after compensation methods. And the stability of output current in the differential current source circuit (DCSC) is 0.2%. (2) The output impedance of two current circuits below the frequency of 200 KHz is above 1 MΩ, and below 1 MHz the output impedance can arrive to 200 KΩ. Then in total the output impedance of the DCSC is higher than that of the Howland current source circuit (HCSC). (3) The SNR of the DCSC are 85.64 dB and 65 dB in the simulation and actual measurement with 10 KHz, which illustrates that the DCSC effectively eliminates the common mode interference. (4) The maximum load in the DCSC is twice as much as that of the HCSC. Lastly a two-dimensional phantom electrical impedance tomography is well reconstructed with the proposed HCSC. Therefore, the measured performance shows that the DCSC can significantly improve the output impedance, the stability, the maximum load, and the SNR of the measurement system.

  20. Modulated CMOS camera for fluorescence lifetime microscopy.

    PubMed

    Chen, Hongtao; Holst, Gerhard; Gratton, Enrico

    2015-12-01

    Widefield frequency-domain fluorescence lifetime imaging microscopy (FD-FLIM) is a fast and accurate method to measure the fluorescence lifetime of entire images. However, the complexity and high costs involved in construction of such a system limit the extensive use of this technique. PCO AG recently released the first luminescence lifetime imaging camera based on a high frequency modulated CMOS image sensor, QMFLIM2. Here we tested and provide operational procedures to calibrate the camera and to improve the accuracy using corrections necessary for image analysis. With its flexible input/output options, we are able to use a modulated laser diode or a 20 MHz pulsed white supercontinuum laser as the light source. The output of the camera consists of a stack of modulated images that can be analyzed by the SimFCS software using the phasor approach. The nonuniform system response across the image sensor must be calibrated at the pixel level. This pixel calibration is crucial and needed for every camera settings, e.g. modulation frequency and exposure time. A significant dependency of the modulation signal on the intensity was also observed and hence an additional calibration is needed for each pixel depending on the pixel intensity level. These corrections are important not only for the fundamental frequency, but also for the higher harmonics when using the pulsed supercontinuum laser. With these post data acquisition corrections, the PCO CMOS-FLIM camera can be used for various biomedical applications requiring a large frame and high speed acquisition. PMID:26500051

  1. Challenges of nickel silicidation in CMOS technologies

    SciTech Connect

    Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet; Baumann, Frieder; Klymko, Nancy; Nummy, Karen; Sun, Bing; Jordan-Sweet, Jean; Yu, Jian; Zhu, Frank; Narasimha, Shreesh; Chudzik, Michael

    2015-04-01

    In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.

  2. A HIGH CURRENT DENSITY LI+ ALUMINO-SILICATE ION SOURCE FOR TARGET HEATING EXPERIMENTS

    SciTech Connect

    Roy, Prabir K.; Greenway, Wayne G.; Kwan, Joe W.; Seidl, Peter A.; Waldron, William L.

    2011-03-23

    The NDCX-II accelerator for target heating experiments has been designed to use a large diameter ({approx_equal} 10.9 cm) Li{sup +} doped alumino-silicate source with a pulse duration of 0.5 {micro}s, and beam current of {approx_equal} 93 mA. Characterization of a prototype lithium alumino-silicate sources is presented. Using 6.35mm diameter prototype emitters (coated on a {approx_equal} 75% porous tungsten substrate), at a temperature of {approx_equal} 1275 C, a space-charge limited Li{sup +} beam current density of {approx_equal} 1 mA/cm{sup 2} was measured. At higher extraction voltage, the source is emission limited at around {approx_equal} 1.5 mA/cm{sup 2}, weakly dependent on the applied voltage. The lifetime of the ion source is {approx_equal} 50 hours while pulsing the extraction voltage at 2 to 3 times per minute. Measurements show that the life time of the ion source does not depend only on beam current extraction, and lithium loss may be dominated by neutral loss or by evaporation. The life time of a source is around {ge} 10 hours in a DC mode extraction, and the extracted charge is {approx_equal} 75% of the available Li in the sample. It is inferred that pulsed heating may increase the life time of a source.

  3. Circuit design for nuclear radiation test of CMOS multiplier chips

    SciTech Connect

    Lim, T.S.; Martin, R.L.; Hughes, H.L.

    1986-09-01

    This paper describes the design of a microprocessor-based electronic circuit to be used in testing the effects of nuclear radiation on a CMOS 8 x 8 multiplier chip. Knowledge of such effects is important for military and space applications of integrated circuits. The multiplier chip undergoing testing is attached to a DUT (device under test) board which is enclosed in a metal container. The container is then lowered to the cobalt 60 radiation source located at the bottom of a 15-ft-deep pool. The gamma-ray radiation test setup is schematically shown. The in-source test board containing the multiplier chip is attached to an 8085-based, single-board microcomputer (SDK-85) by a 30-ft multiconductor cable. Doses of gamma-ray radiation from cobalt 60 are applied in steps at increasing quantities until the multiplier chip, which is tested between doses, begins to malfunction. An 8085 assembly language program is used for functional test of the multiplier. The leakage current and the propagation delay time are also measured between doses.

  4. INDEP approach for leakage reduction in nanoscale CMOS circuits

    NASA Astrophysics Data System (ADS)

    Sharma, Vijay Kumar; Pattanaik, Manisha; Raj, Balwinder

    2015-02-01

    Complementary metal oxide semiconductor (CMOS) technology scaling for improving speed and functionality turns leakage power one of the major concerns for nanoscale circuits design. The minimization of leakage power is a rising challenge for the design of the existing and future nanoscale CMOS circuits. This paper presents a novel, input-dependent, transistor-level, low leakage and reliable INput DEPendent (INDEP) approach for nanoscale CMOS circuits. INDEP approach is based on Boolean logic calculations for the input signals of the extra inserted transistors within the logic circuit. The gate terminals of extra inserted transistors depend on the primary input combinations of the logic circuits. The appropriate selection of input gate voltages of INDEP transistors are reducing the leakage current efficiently along with rail to rail output voltage swing. The important characteristic of INDEP approach is that it works well in both active as well as standby modes of the circuits. This approach overcomes the limitations created by the prevalent current leakage reduction techniques. The simulation results indicate that INDEP approach mitigates 41.6% and 35% leakage power for 1-bit full adder and ISCAS-85 c17 benchmark circuit, respectively, at 32 nm bulk CMOS technology node.

  5. Current source imaging for high spatial resolution magnetocardiography in normal and abnormal rat cardiac muscles

    NASA Astrophysics Data System (ADS)

    Uchida, S.; Iramina, K.; Goto, K.; Ueno, S.

    2000-05-01

    The purpose of our study was to identify the current source produced by acute ischemia and infarction. We measured magnetocardiograms (MCG) and electrocardiograms (ECG) of five male rats using a high-resolution dc superconducting quantum interference device gradiometer in a magnetically shielded room after performing coronary artery occlusion. The spatial resolution of the detecting magnetic field of our system is higher than the typical system, thus permitting the measurement of magnetic fields in small animals. Distribution of the magnetic fields B(t) and distribution of |rot B(t)|, which corresponded to the distribution of the current source, were imaged by 12-channel MCGs. As a result, the distribution of current source changes in the affected area of the myocardium during the ST segment, and amplitude of the peak significantly increased after occlusion. Our system can be used to help clarify the mechanism of the ST shift related to severe heart disease.

  6. Cortical network dynamics during source memory retrieval: current density imaging with individual MRI.

    PubMed

    Kim, Young Youn; Roh, Ah Young; Namgoong, Yoon; Jo, Hang Joon; Lee, Jong-Min; Kwon, Jun Soo

    2009-01-01

    We investigated the neural correlates of source memory retrieval using low-resolution electromagnetic tomography (LORETA) with 64 channels EEG and individual MRI as a realistic head model. Event-related potentials (ERPs) were recorded while 13 healthy subjects performed the source memory task for the voice of the speaker in spoken words. The source correct condition of old words elicited more positive-going potentials than the correct rejection condition of new words at 400-700 ms post-stimulus and the old/new effects also appeared in the right anterior region between 1,000 and 1,200 ms. We conducted source reconstruction at mean latencies of 311, 604, 793, and 1,100 ms and used statistical parametric mapping for the statistical analysis. The results of source analysis suggest that the activation of the right inferior parietal region may reflect retrieval of source information. The source elicited by the difference ERPs between the source correct and source incorrect conditions exhibited dynamic change of current density activation in the overall cortices with time during source memory retrieval. These results indicate that multiple neural systems may underlie the ability to recollect context. PMID:17979123

  7. Beam extraction and high stability operation of high current electron cyclotron resonance proton ion source

    SciTech Connect

    Roychowdhury, P. Mishra, L.; Kewlani, H.; Mittal, K. C.; Patil, D. S.

    2014-03-15

    A high current electron cyclotron resonance proton ion source is designed and developed for the low energy high intensity proton accelerator at Bhabha Atomic Research Centre. The plasma discharge in the ion source is stabilized by minimizing the reflected microwave power using four stub auto tuner and magnetic field. The optimization of extraction geometry is performed using PBGUNS code by varying the aperture, shape, accelerating gap, and the potential on the electrodes. While operating the source, it was found that the two layered microwave window (6 mm quartz plate and 2 mm boron nitride plate) was damaged (a fine hole was drilled) by the back-streaming electrons after continuous operation of the source for 3 h at beam current of 20–40 mA. The microwave window was then shifted from the line of sight of the back-streaming electrons and located after the water-cooled H-plane bend. In this configuration the stable operation of the high current ion source for several hours is achieved. The ion beam is extracted from the source by biasing plasma electrode, puller electrode, and ground electrode to +10 to +50 kV, −2 to −4 kV, and 0 kV, respectively. The total ion beam current of 30–40 mA is recorded on Faraday cup at 40 keV of beam energy at 600–1000 W of microwave power, 800–1000 G axial magnetic field and (1.2–3.9) × 10{sup −3} mbar of neutral hydrogen gas pressure in the plasma chamber. The dependence of beam current on extraction voltage, microwave power, and gas pressure is investigated in the range of operation of the ion source.

  8. An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

    PubMed Central

    Shokrani, Mohammad Reza; Hamidon, Mohd Nizar B.; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology. PMID:24782680

  9. An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

    PubMed

    Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology. PMID:24782680

  10. The magnetospheric disturbance ring current as a source for probing the deep earth electrical conductivity

    USGS Publications Warehouse

    Campbell, W.H.

    1990-01-01

    Two current rings have been observed in the equatorial plane of the earth at times of high geomagnetic activity. An eastward current exists between about 2 and 3.5 earth radii (Re) distant, and a larger, more variable companion current exists between about 4 and 9 Re. These current regions are loaded during geomagnetic substorms. They decay, almost exponentially, after the cessation of the particle influx that attends the solar wind disturbance. This review focuses upon characteristics needed for intelligent use of the ring current as a source for induction probing of the earth's mantle. Considerable difficulties are found with the assumption that Dst is a ring-current index. ?? 1990 Birkha??user Verlag.

  11. Evaluation of Mo-doped Ti salicide process for sub-0.18-μm CMOS

    NASA Astrophysics Data System (ADS)

    Chao, Chih-Ping; Kittl, Jorge A.; Hong, Qi-Zhong; Shiau, Wei-Tsun; Rodder, Mark; Chen, Ih-Chin

    1998-09-01

    For scaled CMOS technology with gate length down to sub-0.25 micrometer, the conventional Ti salicide suffers from high polygate sheet resistance (Rsheet) due to difficulty in the low resistivity C54 TiSi2 phase transition. To improve the sub 0.25 micrometer TiSi2 Rsheet, pre-amorphization implant (PAI) was added to achieve low Rsheet down to approximately 0.1 micrometer gate length, and PAI based TiSi2 has been the base-line salicide process for current 0.25 micrometer CMOS technology. However, various studies on sub 0.18 micrometer devices have shown that PAI process tends to induce additional S/D dopant diffusion and results in the series resistance (RSD) increase and drive current degradation, especially for pMOS transistors. On the other hand, Mo implant was found effective in enhancing the C54 TiSi2 formation for narrow lines and has the potential to realize a simplified TiSi2 process with one single thermal step. However, the Mo based Ti salicide is still relatively new to date, and a complete CMOS study is helpful in identifying the trade-offs for such a process. In this work, we present a detailed CMOS evaluation of Mo doped TiSi2 process. Two different Mo based processes are studied: (1) Mo implant into gate before gate pattern (Mo-A case). In this case, the source/drain (S/D) diffusion regions have minimal Mo doping. (2) Mo implant into gate and S/D regions right before the S/D anneal (Mo-B case). For both Mo-A and Mo-B processes, we also studied the effect of Mo doses and the difference between the conventional 2-step rapid thermal process (RTP), low-temperature formation plus Ti strip plus high-temperature anneal, and the 1-step RTP process, namely low-T formation plus Ti stripe, where the high-T anneal is skipped. The results of the Mo processes are compared with three other reference salicide processes: conventional TiSi2 without PAI (Conv.), TiSi2 with Ge or As PAI and the emerging CoSi2 technology. The following CMOS care-abouts are evaluated for

  12. Influence of the electron source distribution on field-aligned currents

    NASA Astrophysics Data System (ADS)

    Bruening, K.; Goertz, C. K.

    1985-01-01

    The field-aligned current density above a discrete auroral arc has been deduced from the downward electron flux and magnetic field measurements onboard the rocket Porcupine flight 4. Both measurements show that the field-aligned current density is, in spite of decreasing peak energies towards the edge of the arc, about 4 times higher there than in the center of the arc. This can be explained by using the single particle description for an anisotropic electron source distribution.

  13. A Current Source Method For t(sub q) Measurement of Fast Switching Thyristors

    NASA Technical Reports Server (NTRS)

    Niedra, Janis M.

    2006-01-01

    A current source driven circuit has been constructed to measure the turn-off time (t(sub q)) of fast-switching SiC thyristors. This circuit operates from a single power supply and a dual channel pulse generator to provide adjustment of forward current, magnitude and duration of reverse applied voltage, and rate of rise of reapplied forward voltage. Values of t(sub q) down to 100 ns can be resolved.

  14. Future directions for CMOS device technology development from a system application perspective

    NASA Astrophysics Data System (ADS)

    Ning, Tak H.

    2007-03-01

    The development of CMOS technology has been, and will remain, driven by system needs. Traditionally, these needs have been met quite satisfactorily by simply reducing the physical size of the transistors as guided by the MOSFET scaling theory and increasing the chip-level integration density as anticipated from "Moore's Law." Now that CMOS has reached its scaling limits, continued progress has to come from innovations beyond the traditional development paths, guided by anticipating and addressing system designers' concerns and needs. In this talk, we examine several opportunities for extending current CMOS technology to continue satisfying the needs of system designers.

  15. Steps toward fabricating cryogenic CMOS compatible single electron devices for future qubits.

    SciTech Connect

    Wendt, Joel Robert; Childs, Kenton David; Ten Eyck, Gregory A.; Tracy, Lisa A.; Eng, Kevin; Stevens, Jeffrey; Nordberg, Eric; Carroll, Malcolm S.; Lilly, Michael Patrick

    2008-08-01

    We describe the development of a novel silicon quantum bit (qubit) device architecture that involves using materials that are compatible with a Sandia National Laboratories (SNL) 0.35 mum complementary metal oxide semiconductor (CMOS) process intended to operate at 100 mK. We describe how the qubit structure can be integrated with CMOS electronics, which is believed to have advantages for critical functions like fast single electron electrometry for readout compared to current approaches using radio frequency techniques. Critical materials properties are reviewed and preliminary characterization of the SNL CMOS devices at 4.2 K is presented.

  16. Fast pulsed operation of a small non-radioactive electron source with continuous emission current control

    NASA Astrophysics Data System (ADS)

    Cochems, P.; Kirk, A. T.; Bunert, E.; Runge, M.; Goncalves, P.; Zimmermann, S.

    2015-06-01

    Non-radioactive electron sources are of great interest in any application requiring the emission of electrons at atmospheric pressure, as they offer better control over emission parameters than radioactive electron sources and are not subject to legal restrictions. Recently, we published a simple electron source consisting only of a vacuum housing, a filament, and a single control grid. In this paper, we present improved control electronics that utilize this control grid in order to focus and defocus the electron beam, thus pulsing the electron emission at atmospheric pressure. This allows short emission pulses and excellent stability of the emitted electron current due to continuous control, both during pulsed and continuous operations. As an application example, this electron source is coupled to an ion mobility spectrometer. Here, the pulsed electron source allows experiments on gas phase ion chemistry (e.g., ion generation and recombination kinetics) and can even remove the need for a traditional ion shutter.

  17. Fast pulsed operation of a small non-radioactive electron source with continuous emission current control.

    PubMed

    Cochems, P; Kirk, A T; Bunert, E; Runge, M; Goncalves, P; Zimmermann, S

    2015-06-01

    Non-radioactive electron sources are of great interest in any application requiring the emission of electrons at atmospheric pressure, as they offer better control over emission parameters than radioactive electron sources and are not subject to legal restrictions. Recently, we published a simple electron source consisting only of a vacuum housing, a filament, and a single control grid. In this paper, we present improved control electronics that utilize this control grid in order to focus and defocus the electron beam, thus pulsing the electron emission at atmospheric pressure. This allows short emission pulses and excellent stability of the emitted electron current due to continuous control, both during pulsed and continuous operations. As an application example, this electron source is coupled to an ion mobility spectrometer. Here, the pulsed electron source allows experiments on gas phase ion chemistry (e.g., ion generation and recombination kinetics) and can even remove the need for a traditional ion shutter. PMID:26133868

  18. Fast pulsed operation of a small non-radioactive electron source with continuous emission current control

    SciTech Connect

    Cochems, P.; Kirk, A. T.; Bunert, E.; Runge, M.; Goncalves, P.; Zimmermann, S.

    2015-06-15

    Non-radioactive electron sources are of great interest in any application requiring the emission of electrons at atmospheric pressure, as they offer better control over emission parameters than radioactive electron sources and are not subject to legal restrictions. Recently, we published a simple electron source consisting only of a vacuum housing, a filament, and a single control grid. In this paper, we present improved control electronics that utilize this control grid in order to focus and defocus the electron beam, thus pulsing the electron emission at atmospheric pressure. This allows short emission pulses and excellent stability of the emitted electron current due to continuous control, both during pulsed and continuous operations. As an application example, this electron source is coupled to an ion mobility spectrometer. Here, the pulsed electron source allows experiments on gas phase ion chemistry (e.g., ion generation and recombination kinetics) and can even remove the need for a traditional ion shutter.

  19. Ionospheric current source modeling and global geomagnetic induction using ground geomagnetic observatory data

    NASA Astrophysics Data System (ADS)

    Sun, J.; Kelbert, A.; Egbert, G. D.

    2015-10-01

    Long-period global-scale electromagnetic induction studies of deep Earth conductivity are based almost exclusively on magnetovariational methods and require accurate models of external source spatial structure. We describe approaches to inverting for both the external sources and three-dimensional (3-D) conductivity variations and apply these methods to long-period (T≥1.2 days) geomagnetic observatory data. Our scheme involves three steps: (1) Observatory data from 60 years (only partly overlapping and with many large gaps) are reduced and merged into dominant spatial modes using a scheme based on frequency domain principal components. (2) Resulting modes are inverted for corresponding external source spatial structure, using a simplified conductivity model with radial variations overlain by a two-dimensional thin sheet. The source inversion is regularized using a physically based source covariance, generated through superposition of correlated tilted zonal (quasi-dipole) current loops, representing ionospheric source complexity smoothed by Earth rotation. Free parameters in the source covariance model are tuned by a leave-one-out cross-validation scheme. (3) The estimated data modes are inverted for 3-D Earth conductivity, assuming the source excitation estimated in step 2. Together, these developments constitute key components in a practical scheme for simultaneous inversion of the catalogue of historical and modern observatory data for external source spatial structure and 3-D Earth conductivity.

  20. Development of a high-current microwave ion source for proton linac application systems

    NASA Astrophysics Data System (ADS)

    Tanaka, M.; Hara, S.; Hae, T.; Iga, T.; Saitou, K.; Amemiya, K.; Hiramoto, K.; Kakiuchi, S.

    2004-05-01

    A microwave hydrogen ion source was developed to improve reliability, and to increase operation time of proton linac application systems. The ion source needs no filament in the discharge chamber, which leads to better reliability and less maintenance time. The developed source produced a maximum hydrogen ion beam current of 70 mA (high current density of 360 mA/cm2, beam energy of 30 keV) with a 5 mm diam extraction aperture and 1.2 kW microwave power. The proton fraction was increased with an increase in rf power and reached around 90% at 1 kW. Measured 90% beam normalized emittance was 0.4 π mm mrad. Rise times of rf power and beam current to 90% of the final values were about 30 and 35 μs, respectively, at a pulse operation mode with 400 μs pulse width and 100 Hz repetition rate. The dynamic range of beam currents was enlarged (3-63 mA) in the pulse mode with a modified rf wave form to assist ignition of microwave discharge. These performance parameters will be desirable for pulse operation accelerator applications like proton therapy systems. A long time operation stability (150 h) was confirmed with a beam current of 51 mA; change in the current was 2%.

  1. The Feasibility of a Current-Source Thermoelectric Power Generator and Its Corresponding Structure Design

    NASA Astrophysics Data System (ADS)

    Wu, Guangxi; Yu, Xiong

    2015-06-01

    Traditional thermoelectric power generators consist of thermoelectric elements connected electrically in series and thermally in parallel. Current flowing inside the thermoelectric power generator is conventionally considered to be driven by the Seebeck effect-induced electric field and the output voltage-induced reverse electric field. This paper proposes a more comprehensive model that implies that current is also driven by chemical potential and carrier density variation. Therefore, the thermoelectric power generator can be treated as a current-source power supplier when the current driven by carrier density variation dominates. This paper performs holistic finite element implementation of the new holistic model where a thermoelectric power generator unit behaves like a current-source while the working temperature conditions maintain stability. This result validates that the thermoelectric element shows the behaviors of a current-source power supply under certain conditions. This discovery brings a new perspective on the behaviors of thermoelectric elements, which potentially will lead to the development of novel thermoelectric power generator design.

  2. Fabrication and Characterization of CMOS-MEMS Thermoelectric Micro Generators

    PubMed Central

    Kao, Pin-Hsu; Shih, Po-Jen; Dai, Ching-Liang; Liu, Mao-Chen

    2010-01-01

    This work presents a thermoelectric micro generator fabricated by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-CMOS process. The micro generator is composed of 24 thermocouples in series. Each thermocouple is constructed by p-type and n-type polysilicon strips. The output power of the generator depends on the temperature difference between the hot and cold parts in the thermocouples. In order to prevent heat-receiving in the cold part in the thermocouples, the cold part is covered with a silicon dioxide layer with low thermal conductivity to insulate the heat source. The hot part of the thermocouples is suspended and connected to an aluminum plate, to increases the heat-receiving area in the hot part. The generator requires a post-CMOS process to release the suspended structures. The post-CMOS process uses an anisotropic dry etching to remove the oxide sacrificial layer and an isotropic dry etching to etch the silicon substrate. Experimental results show that the micro generator has an output voltage of 67 μV at the temperature difference of 1 K. PMID:22205869

  3. Fabrication and characterization of CMOS-MEMS thermoelectric micro generators.

    PubMed

    Kao, Pin-Hsu; Shih, Po-Jen; Dai, Ching-Liang; Liu, Mao-Chen

    2010-01-01

    This work presents a thermoelectric micro generator fabricated by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-CMOS process. The micro generator is composed of 24 thermocouples in series. Each thermocouple is constructed by p-type and n-type polysilicon strips. The output power of the generator depends on the temperature difference between the hot and cold parts in the thermocouples. In order to prevent heat-receiving in the cold part in the thermocouples, the cold part is covered with a silicon dioxide layer with low thermal conductivity to insulate the heat source. The hot part of the thermocouples is suspended and connected to an aluminum plate, to increases the heat-receiving area in the hot part. The generator requires a post-CMOS process to release the suspended structures. The post-CMOS process uses an anisotropic dry etching to remove the oxide sacrificial layer and an isotropic dry etching to etch the silicon substrate. Experimental results show that the micro generator has an output voltage of 67 μV at the temperature difference of 1 K. PMID:22205869

  4. Studies in High Current Density Ion Sources for Heavy Ion FusionApplications

    SciTech Connect

    Chacon-Golcher, E.

    2002-06-01

    This dissertation develops diverse research on small (diameter {approx} few mm), high current density (J {approx} several tens of mA/cm{sup 2}) heavy ion sources. The research has been developed in the context of a programmatic interest within the Heavy Ion Fusion (HIF) Program to explore alternative architectures in the beam injection systems that use the merging of small, bright beams. An ion gun was designed and built for these experiments. Results of average current density yield () at different operating conditions are presented for K{sup +} and Cs{sup +} contact ionization sources and potassium aluminum silicate sources. Maximum values for a K{sup +} beam of {approx}90 mA/cm{sup 2} were observed in 2.3 {micro}s pulses. Measurements of beam intensity profiles and emittances are included. Measurements of neutral particle desorption are presented at different operating conditions which lead to a better understanding of the underlying atomic diffusion processes that determine the lifetime of the emitter. Estimates of diffusion times consistent with measurements are presented, as well as estimates of maximum repetition rates achievable. Diverse studies performed on the composition and preparation of alkali aluminosilicate ion sources are also presented. In addition, this work includes preliminary work carried out exploring the viability of an argon plasma ion source and a bismuth metal vapor vacuum arc (MEVVA) ion source. For the former ion source, fast rise-times ({approx} 1 {micro}s), high current densities ({approx} 100 mA/cm{sup 2}) and low operating pressures (< 2 mtorr) were verified. For the latter, high but acceptable levels of beam emittance were measured ({var_epsilon}{sub n} {le} 0.006 {pi} mm {center_dot} mrad) although measured currents differed from the desired ones (I {approx} 5mA) by about a factor of 10.

  5. Langmuir probe diagnostics of plasma in high current electron cyclotron resonance proton ion source

    SciTech Connect

    Roychowdhury, P.; Kewlani, H.; Mishra, L.; Mittal, K. C.; Patil, D. S.

    2013-07-15

    A high current Electron Cyclotron Resonance (ECR) proton ion source has been developed for low energy high intensity proton accelerator at Bhabha Atomic Research Centre. Langmuir probe diagnostics of the plasma generated in this proton ion source is performed using Langmuir probe. The diagnostics of plasma in the ion source is important as it determines beam parameters of the ion source, i.e., beam current, emittance, and available species. The plasma parameter measurement in the ion source is performed in continuously working and pulsed mode using hydrogen as plasma generation gas. The measurement is performed in the ECR zone for operating pressure and microwave power range of 10{sup −4}–10{sup −3} mbar and 400–1000 W. An automated Langmuir probe diagnostics unit with data acquisition system is developed to measure these parameters. The diagnostics studies indicate that the plasma density and plasma electron temperature measured are in the range 5.6 × 10{sup 10} cm{sup −3} to 3.8 × 10{sup 11} cm{sup −3} and 4–14 eV, respectively. Using this plasma, ion beam current of tens of mA is extracted. The variations of plasma parameters with microwave power, gas pressure, and radial location of the probe have been studied.

  6. Beam current enhancement of microwave plasma ion source utilizing double-port rectangular cavity resonator.

    PubMed

    Lee, Yuna; Park, Yeong-Shin; Jo, Jong-Gab; Yang, J J; Hwang, Y S

    2012-02-01

    Microwave plasma ion source with rectangular cavity resonator has been examined to improve ion beam current by changing wave launcher type from single-port to double-port. The cavity resonators with double-port and single-port wave launchers are designed to get resonance effect at TE-103 mode and TE-102 mode, respectively. In order to confirm that the cavities are acting as resonator, the microwave power for breakdown is measured and compared with the E-field strength estimated from the HFSS (High Frequency Structure Simulator) simulation. Langmuir probe measurements show that double-port cavity enhances central density of plasma ion source by modifying non-uniform plasma density profile of the single-port cavity. Correspondingly, beam current from the plasma ion source utilizing the double-port resonator is measured to be higher than that utilizing single-port resonator. Moreover, the enhancement in plasma density and ion beam current utilizing the double-port resonator is more pronounced as higher microwave power applied to the plasma ion source. Therefore, the rectangular cavity resonator utilizing the double-port is expected to enhance the performance of plasma ion source in terms of ion beam extraction. PMID:22380295

  7. Beam current enhancement of microwave plasma ion source utilizing double-port rectangular cavity resonator

    SciTech Connect

    Lee, Yuna; Park, Yeong-Shin; Jo, Jong-Gab; Yang, J. J.; Hwang, Y. S.

    2012-02-15

    Microwave plasma ion source with rectangular cavity resonator has been examined to improve ion beam current by changing wave launcher type from single-port to double-port. The cavity resonators with double-port and single-port wave launchers are designed to get resonance effect at TE-103 mode and TE-102 mode, respectively. In order to confirm that the cavities are acting as resonator, the microwave power for breakdown is measured and compared with the E-field strength estimated from the HFSS (High Frequency Structure Simulator) simulation. Langmuir probe measurements show that double-port cavity enhances central density of plasma ion source by modifying non-uniform plasma density profile of the single-port cavity. Correspondingly, beam current from the plasma ion source utilizing the double-port resonator is measured to be higher than that utilizing single-port resonator. Moreover, the enhancement in plasma density and ion beam current utilizing the double-port resonator is more pronounced as higher microwave power applied to the plasma ion source. Therefore, the rectangular cavity resonator utilizing the double-port is expected to enhance the performance of plasma ion source in terms of ion beam extraction.

  8. Nodal Analysis Optimization Based on the Use of Virtual Current Sources: A Powerful New Pedagogical Method

    ERIC Educational Resources Information Center

    Chatzarakis, G. E.

    2009-01-01

    This paper presents a new pedagogical method for nodal analysis optimization based on the use of virtual current sources, applicable to any linear electric circuit (LEC), regardless of its complexity. The proposed method leads to straightforward solutions, mostly arrived at by inspection. Furthermore, the method is easily adapted to computer…

  9. Gyrotron-driven high current ECR ion source for boron-neutron capture therapy neutron generator

    NASA Astrophysics Data System (ADS)

    Skalyga, V.; Izotov, I.; Golubev, S.; Razin, S.; Sidorov, A.; Maslennikova, A.; Volovecky, A.; Kalvas, T.; Koivisto, H.; Tarvainen, O.

    2014-12-01

    Boron-neutron capture therapy (BNCT) is a perspective treatment method for radiation resistant tumors. Unfortunately its development is strongly held back by a several physical and medical problems. Neutron sources for BNCT currently are limited to nuclear reactors and accelerators. For wide spread of BNCT investigations more compact and cheap neutron source would be much more preferable. In present paper an approach for compact D-D neutron generator creation based on a high current ECR ion source is suggested. Results on dense proton beams production are presented. A possibility of ion beams formation with current density up to 600 mA/cm2 is demonstrated. Estimations based on obtained experimental results show that neutron target bombarded by such deuteron beams would theoretically yield a neutron flux density up to 6·1010 cm-2/s. Thus, neutron generator based on a high-current deuteron ECR source with a powerful plasma heating by gyrotron radiation could fulfill the BNCT requirements significantly lower price, smaller size and ease of operation in comparison with existing reactors and accelerators.

  10. TID Simulation of Advanced CMOS Devices for Space Applications

    NASA Astrophysics Data System (ADS)

    Sajid, Muhammad

    2016-07-01

    This paper focuses on Total Ionizing Dose (TID) effects caused by accumulation of charges at silicon dioxide, substrate/silicon dioxide interface, Shallow Trench Isolation (STI) for scaled CMOS bulk devices as well as at Buried Oxide (BOX) layer in devices based on Silicon-On-Insulator (SOI) technology to be operated in space radiation environment. The radiation induced leakage current and corresponding density/concentration electrons in leakage current path was presented/depicted for 180nm, 130nm and 65nm NMOS, PMOS transistors based on CMOS bulk as well as SOI process technologies on-board LEO and GEO satellites. On the basis of simulation results, the TID robustness analysis for advanced deep sub-micron technologies was accomplished up to 500 Krad. The correlation between the impact of technology scaling and magnitude of leakage current with corresponding total dose was established utilizing Visual TCAD Genius program.

  11. High-voltage CMOS detectors

    NASA Astrophysics Data System (ADS)

    Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

    2016-07-01

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented.

  12. A cookbook for building a high-current dimpled H– magnetron source for accelerators

    DOE PAGESBeta

    Bollinger, Daniel S.; Karns, Patrick R.; Tan, Cheng -Yang

    2015-10-30

    A high-current (>50 mA) dimpled H– magnetron source has been built at Fermilab for supplying H– beam to the entire accelerator complex. Despite many decades of expertise with slit H– magnetron sources at Fermilab, we were faced with many challenges from the dimpled H– magnetron source, which needed to be overcome in order to make it operational. Dimpled H– sources for high-energy physics are not new: Brookhaven National Laboratory has operated a dimpled H- source for more than two decades. However, the transference of that experience to Fermilab took about two years because a cookbook for building this type ofmore » source did not exist and seemingly innocuous or undocumented choices had a huge impact on the success or failure for this type of source. Moreover, it is the goal of this paper to document the reasons for these choices and to present a cookbook for building and operating dimpled H– magnetron sources.« less

  13. RF Sources for the ITER Ion Cyclotron Heating and Current Drive System

    SciTech Connect

    Hosea, J.; Brunkhorst, C.; Fredd, E.; Goulding, R. H.; Goulding, R. H.; Greenough, N.; Kung, C.; Rasmussen, D. A.; Swain, D. W.; Wilson, J. R.

    2005-10-04

    The RF source requirements for the ITER ion cyclotron (IC) heating and current drive system are very challenging ? 20 MW CW power into an antenna load with a VSWR of up to 2 over the frequency range of 35-65 MHz. For the two present antenna designs under consideration, 8 sources providing 2.5 MW each are to be employed. For these sources, the outputs of two final power amplifiers (FPAs), using the high power CPI 4CM2500KG tube, are combined with a 180? hybrid combiner to easily meet the ITER IC source requirements ? 2.5 MW is supplied at a VSWR of 2 at ? 70% of the maximum tube power available in class B operation. The cylindrical cavity configuration for the FPAs is quite compact so that the 8 combined sources fit into the space allocated at the ITER site with room to spare. The source configuration is described in detail and its projected operating power curves are presented. Although the CPI tube has been shown to be stable under high power operating conditions on many facilities, a test of the combined FPA source arrangement is in preparation using existing high power 30 MHz amplifiers to assure that this configuration can be made robustly stable for all phases at a VSWR up to 2. The possibility of using 12 sources to feed a suitably modified antenna design is also discussed in the context of providing flexibility for specifying the final IC antenna design.

  14. A current-source inverter fed induction motor drive system with reduced losses

    SciTech Connect

    Espinoza, J.R.; Joos, G.

    1995-12-31

    Standard low and medium induction power motor drives are based on the PWM voltage source inverter (VSI) fed from a diode rectifier. The dual topology, based on the current source inverter/rectifier structure is used in medium and high power applications. This paper addresses some of the drawbacks of this approach compared to the voltage source approach. The proposed drive features: (a) an on-line operated PWM inverter, using instantaneous output capacitor voltage control based on space vector modulation; (b) a line-synchronized PWM rectifier, with dc bus current control; (c) an additional inverter modulation index control loop, ensuring a constant inverter modulation index. The resulting advantages include: (a) ruggedness and inherent continuous regeneration capability; (b) near unity global input power factor; (c) reduced motor voltage distortion; (d) reduced dc bus inductor and switch conduction losses; (e) fast motor dynamic response; (f) elimination of motor circuit resonances. Simulated and experimental results based on a DSP implementation are given.

  15. The source altitude, electric current, and intrinsic brightness of terrestrial gamma ray flashes

    NASA Astrophysics Data System (ADS)

    Cummer, Steven A.; Briggs, Michael S.; Dwyer, Joseph R.; Xiong, Shaolin; Connaughton, Valerie; Fishman, Gerald J.; Lu, Gaopeng; Lyu, Fanchao; Solanki, Rahulkumar

    2014-12-01

    Many details of how thunderstorms generate terrestrial gamma ray flashes (TGFs) and other forms of high-energy radiation remain uncertain, including the basic question of where they are produced. We exploit the association of distinct low-frequency radio emissions with generation of terrestrial gamma ray flashes (TGFs) to directly measure for the first time the TGF source altitude. Analysis of two events reveals source altitudes of 11.8 ± 0.4 km and 11.9 ± 0.9 km. This places the source region in the interior of the thunderstorm between the two main charge layers and implies an intrinsic TGF brightness of approximately 1018 runaway electrons. The electric current in this nontraditional lightning process is found to be strong enough to drive nonlinear effects in the ionosphere, and in one case is comparable to the highest peak current lightning processes on the planet.

  16. CMOS output buffer wave shaper

    NASA Technical Reports Server (NTRS)

    Albertson, L.; Whitaker, S.; Merrell, R.

    1990-01-01

    As the switching speeds and densities of Digital CMOS integrated circuits continue to increase, output switching noise becomes more of a problem. A design technique which aids in the reduction of switching noise is reported. The output driver stage is analyzed through the use of an equivalent RLC circuit. The results of the analysis are used in the design of an output driver stage. A test circuit based on these techniques is being submitted to MOSIS for fabrication.

  17. Cryogenic CMOS circuits for single charge digital readout.

    SciTech Connect

    Gurrieri, Thomas M.; Longoria, Erin Michelle; Eng, Kevin; Carroll, Malcolm S.; Hamlet, Jason R.; Young, Ralph Watson

    2010-03-01

    The readout of a solid state qubit often relies on single charge sensitive electrometry. However the combination of fast and accurate measurements is non trivial due to large RC time constants due to the electrometers resistance and shunt capacitance from wires between the cold stage and room temperature. Currently fast sensitive measurements are accomplished through rf reflectrometry. I will present an alternative single charge readout technique based on cryogenic CMOS circuits in hopes to improve speed, signal-to-noise, power consumption and simplicity in implementation. The readout circuit is based on a current comparator where changes in current from an electrometer will trigger a digital output. These circuits were fabricated using Sandia's 0.35 {micro}m CMOS foundry process. Initial measurements of comparators with an addition a current amplifier have displayed current sensitivities of < 1nA at 4.2K, switching speeds up to {approx}120ns, while consuming {approx}10 {micro}W. I will also discuss an investigation of noise characterization of our CMOS process in hopes to obtain a better understanding of the ultimate limit in signal to noise performance.

  18. Cryogenic CMOS circuits for single charge digital readout

    NASA Astrophysics Data System (ADS)

    Eng, Kevin; Gurrieri, T. M.; Hamlet, J.; Carroll, M. S.

    2010-03-01

    The readout of a solid state qubit often relies on single charge sensitive electrometry. However the combination of fast and accurate measurements is non trivial due to large RC time constants due to the electrometers resistance and shunt capacitance from wires between the cold stage and room temperature. Currently fast sensitive measurements are accomplished through rf reflectrometry. I will present an alternative single charge readout technique based on cryogenic CMOS circuits in hopes to improve speed, signal-to-noise, power consumption and simplicity in implementation. The readout circuit is based on a current comparator where changes in current from an electrometer will trigger a digital output. These circuits were fabricated using Sandia's 0.35μm CMOS foundry process. Initial measurements of comparators with an addition a current amplifier have displayed current sensitivities of < 1nA at 4.2K, switching speeds up to ˜120ns, while consuming ˜10μW. I will also discuss an investigation of noise characterization of our CMOS process in hopes to obtain a better understanding of the ultimate limit in signal to noise performance.

  19. Monolithic active pixel sensors (MAPS) in a VLSI CMOS technology

    NASA Astrophysics Data System (ADS)

    Turchetta, R.; French, M.; Manolopoulos, S.; Tyndel, M.; Allport, P.; Bates, R.; O'Shea, V.; Hall, G.; Raymond, M.

    2003-03-01

    Monolithic Active Pixel Sensors (MAPS) designed in a standard VLSI CMOS technology have recently been proposed as a compact pixel detector for the detection of high-energy charged particle in vertex/tracking applications. MAPS, also named CMOS sensors, are already extensively used in visible light applications. With respect to other competing imaging technologies, CMOS sensors have several potential advantages in terms of low cost, low power, lower noise at higher speed, random access of pixels which allows windowing of region of interest, ability to integrate several functions on the same chip. This brings altogether to the concept of 'camera-on-a-chip'. In this paper, we review the use of CMOS sensors for particle physics and we analyse their performances in term of the efficiency (fill factor), signal generation, noise, readout speed and sensor area. In most of high-energy physics applications, data reduction is needed in the sensor at an early stage of the data processing before transfer of the data to tape. Because of the large number of pixels, data reduction is needed on the sensor itself or just outside. This brings in stringent requirements on the temporal noise as well as to the sensor uniformity, expressed as a Fixed Pattern Noise (FPN). A pixel architecture with an additional transistor is proposed. This architecture, coupled to correlated double sampling of the signal will allow cancellation of the two dominant noise sources, namely the reset or kTC noise and the FPN. A prototype has been designed in a standard 0.25 μm CMOS technology. It has also a structure for electrical calibration of the sensor. The prototype is functional and detailed tests are under way.

  20. Lateral spreading in a steady turbulent density current from an isolated source

    NASA Astrophysics Data System (ADS)

    Wells, Andrew; Vivian, Josh

    2014-11-01

    Turbulent buoyancy-driven flows on slopes occur in a range of environmental settings, such as dense ocean overflows, atmospheric katabatic winds, meltwater flows under ice shelves, or discharge of industrial effluents. A convenient modelling approach for dense currents from isolated sources considers a so-called ``streamtube approximation,'' averaging over the cross-section of the current to yield an effectively one-dimensional model for the evolution of flow along a streamline. However, such modelling approaches typically parameterise any changes in current width, rather than directly predicting the dynamics of lateral spreading. To build insight into the relevant dynamics, we consider steady density currents flowing down a planar slope, supplied by a continuous buoyancy flux from an isolated source. A model is developed to describe the downslope evolution of flow averaged over the width and depth of the current, including a new dynamical treatment of lateral spreading. We analyse theoretical and numerical solutions, before comparing to laboratory experiments with a dense saline current flowing down a slope.

  1. Bipolar square-wave current source for transient electromagnetic systems based on constant shutdown time

    NASA Astrophysics Data System (ADS)

    Wang, Shilong; Yin, Changchun; Lin, Jun; Yang, Yu; Hu, Xueyan

    2016-03-01

    Cooperative work of multiple magnetic transmitting sources is a new trend in the development of transient electromagnetic system. The key is the bipolar current waves shutdown, concurrently in the inductive load. In the past, it was difficult to use the constant clamping voltage technique to realize the synchronized shutdown of currents with different peak values. Based on clamping voltage technique, we introduce a new controlling method with constant shutdown time. We use the rising time to control shutdown time and use low voltage power source to control peak current. From the viewpoint of the circuit energy loss, by taking the high-voltage capacitor bypass resistance and the capacitor of the passive snubber circuit into account, we establish the relationship between the rising time and the shutdown time. Since the switch is not ideal, we propose a new method to test the shutdown time by the low voltage, the high voltage and the peak current. Experimental results show that adjustment of the current rising time can precisely control the value of the clamp voltage. When the rising time is fixed, the shutdown time is unchanged. The error for shutdown time deduced from the energy consumption is less than 6%. The new controlling method on current shutdown proposed in this paper can be used in the cooperative work of borehole and ground transmitting system.

  2. CMOS downsizing toward sub-10 nm

    NASA Astrophysics Data System (ADS)

    Iwai, Hiroshi

    2004-04-01

    Recently, CMOS downsizing has been accelerated very aggressively in both production and research level, and even transistor operation of a 6 nm gate length p-channel MOSFET was reported in a conference. However, many serious problems are expected for implementing such small-geometry MOSFETs into large scale integrated circuits, and it is still questionable whether we can successfully introduce sub-10 nm CMOS LSIs into the market or not. In this paper, limitation and its possible causes for the downscaling of CMOS towards sub-10 nm are discussed with consideration of past CMOS predictions for the limitation.

  3. Passive radiation detection using optically active CMOS sensors

    NASA Astrophysics Data System (ADS)

    Dosiek, Luke; Schalk, Patrick D.

    2013-05-01

    Recently, there have been a number of small-scale and hobbyist successes in employing commodity CMOS-based camera sensors for radiation detection. For example, several smartphone applications initially developed for use in areas near the Fukushima nuclear disaster are capable of detecting radiation using a cell phone camera, provided opaque tape is placed over the lens. In all current useful implementations, it is required that the sensor not be exposed to visible light. We seek to build a system that does not have this restriction. While building such a system would require sophisticated signal processing, it would nevertheless provide great benefits. In addition to fulfilling their primary function of image capture, cameras would also be able to detect unknown radiation sources even when the danger is considered to be low or non-existent. By experimentally profiling the image artifacts generated by gamma ray and β particle impacts, algorithms are developed to identify the unique features of radiation exposure, while discarding optical interaction and thermal noise effects. Preliminary results focus on achieving this goal in a laboratory setting, without regard to integration time or computational complexity. However, future work will seek to address these additional issues.

  4. Monolithic integration of high bandwidth waveguide coupled Ge photodiode in a photonic BiCMOS process

    NASA Astrophysics Data System (ADS)

    Lischke, S.; Knoll, D.; Zimmermann, L.

    2015-03-01

    Monolithic integration of photonic functionality in the frontend-of-line (FEOL) of an advanced microelectronics technology is a key step towards future communication applications. This combines photonic components such as waveguides, couplers, modulators, and photo detectors with high-speed electronics plus shortest possible interconnects crucial for high-speed performance. Integration of photonics into CMOS FEOL is therefore in development for quite some time reaching 90nm node recently [1]. However, an alternative to CMOS is high-performance BiCMOS, offering significant advantages for integrated photonics-electronics applications with regard to cost and RF performance. We already presented results of FEOL integration of photonic components in a high-performance SiGe:C BiCMOS baseline to establish a novel, photonic BiCMOS process. Process cornerstone is a local-SOI approach which allows us to fabricate SOI-based, thus low-loss photonic components in a bulk BiCMOS environment [2]. A monolithically integrated 10Gbit/sec Silicon modulator with driver was shown here [3]. A monolithically integrated 25Gbps receiver was presented in [4], consisting of 200GHz bipolar transistors and CMOS devices, low-loss waveguides, couplers, and highspeed Ge photo diodes showing 3-dB bandwidth of 35GHz, internal responsivity of more than 0.6A/W at λ= 1.55μm, and ~ 50nA dark current at 1V. However, the BiCMOS-given thermal steps cause a significant smearing of the Germanium photo diodes doping profile, limiting the photo diode performance. Therefore, we introduced implantation of non-doping elements to overcome such limiting factors, resulting in photo diode bandwidths of more than 50GHz even under the effect of thermal steps necessary when the diodes are integrated in a high performance BiCMOS process.

  5. Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Jones, Todd J.; Dickie, Matthew R.; Greer, Frank; Cunningham, Thomas J.; Blazejewski, Edward; Nikzad, Shouleh

    2009-01-01

    In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

  6. Neutron generator for BNCT based on high current ECR ion source with gyrotron plasma heating.

    PubMed

    Skalyga, V; Izotov, I; Golubev, S; Razin, S; Sidorov, A; Maslennikova, A; Volovecky, A; Kalvas, T; Koivisto, H; Tarvainen, O

    2015-12-01

    BNCT development nowadays is constrained by a progress in neutron sources design. Creation of a cheap and compact intense neutron source would significantly simplify trial treatments avoiding use of expensive and complicated nuclear reactors and accelerators. D-D or D-T neutron generator is one of alternative types of such sources for. A so-called high current quasi-gasdynamic ECR ion source with plasma heating by millimeter wave gyrotron radiation is suggested to be used in a scheme of D-D neutron generator in the present work. Ion source of that type was developed in the Institute of Applied Physics of Russian Academy of Sciences (Nizhny Novgorod, Russia). It can produce deuteron ion beams with current density up to 700-800 mA/cm(2). Generation of the neutron flux with density at the level of 7-8·10(10) s(-1) cm(-2) at the target surface could be obtained in case of TiD2 target bombardment with deuteron beam accelerated to 100 keV. Estimations show that it is enough for formation of epithermal neutron flux with density higher than 10(9) s(-1) cm(-2) suitable for BNCT. Important advantage of described approach is absence of Tritium in the scheme. First experiments performed in pulsed regime with 300 mA, 45 kV deuteron beam directed to D2O target demonstrated 10(9) s(-1) neutron flux. This value corresponds to theoretical estimations and proofs prospects of neutron generator development based on high current quasi-gasdynamic ECR ion source. PMID:26302662

  7. Hybrid CMOS SiPIN detectors as astronomical imagers

    NASA Astrophysics Data System (ADS)

    Simms, Lance Michael

    Charge Coupled Devices (CCDs) have dominated optical and x-ray astronomy since their inception in 1969. Only recently, through improvements in design and fabrication methods, have imagers that use Complimentary Metal Oxide Semiconductor (CMOS) technology gained ground on CCDs in scientific imaging. We are now in the midst of an era where astronomers might begin to design optical telescope cameras that employ CMOS imagers. The first three chapters of this dissertation are primarily composed of introductory material. In them, we discuss the potential advantages that CMOS imagers offer over CCDs in astronomical applications. We compare the two technologies in terms of the standard metrics used to evaluate and compare scientific imagers: dark current, read noise, linearity, etc. We also discuss novel features of CMOS devices and the benefits they offer to astronomy. In particular, we focus on a specific kind of hybrid CMOS sensor that uses Silicon PIN photodiodes to detect optical light in order to overcome deficiencies of commercial CMOS sensors. The remaining four chapters focus on a specific type of hybrid CMOS Silicon PIN sensor: the Teledyne Hybrid Visible Silicon PIN Imager (HyViSI). In chapters four and five, results from testing HyViSI detectors in the laboratory and at the Kitt Peak 2.1m telescope are presented. We present our laboratory measurements of the standard detector metrics for a number of HyViSI devices, ranging from 1k×1k to 4k×4k format. We also include a description of the SIDECAR readout circuit that was used to control the detectors. We then show how they performed at the telescope in terms of photometry, astrometry, variability measurement, and telescope focusing and guiding. Lastly, in the final two chapters we present results on detector artifacts such as pixel crosstalk, electronic crosstalk, and image persistence. One form of pixel crosstalk that has not been discussed elsewhere in the literature, which we refer to as Interpixel Charge

  8. Direct current H- source for boron neutron capture therapy tandem acceleratora)

    NASA Astrophysics Data System (ADS)

    Belchenko, Yu.; Sanin, A.; Gusev, I.; Khilchenko, A.; Kvashnin, A.; Rashchenko, V.; Savkin, V.; Zubarev, P.

    2008-02-01

    One year experience of dc H- source operation at 2MeV tandem accelerator is described. The source delivers H- ion beams with controlled current in the range of 1-8mA and energy up to 25keV. Normalized 1rms emittance for 8mA beam is less than 0.2πmmmrad. Negative ions are produced on the cesiated anode of the Penning discharge, driven by plasma injection from the hollow cathode inserts.

  9. Direct current H{sup -} source for boron neutron capture therapy tandem accelerator

    SciTech Connect

    Belchenko, Yu.; Sanin, A.; Gusev, I.; Khilchenko, A.; Kvashnin, A.; Rashchenko, V.; Savkin, V.; Zubarev, P.

    2008-02-15

    One year experience of dc H{sup -} source operation at 2 MeV tandem accelerator is described. The source delivers H{sup -} ion beams with controlled current in the range of 1-8 mA and energy up to 25 keV. Normalized 1 rms emittance for 8 mA beam is less than 0.2{pi} mm mrad. Negative ions are produced on the cesiated anode of the Penning discharge, driven by plasma injection from the hollow cathode inserts.

  10. Fully CMOS analog and digital SiPMs

    NASA Astrophysics Data System (ADS)

    Zou, Yu; Villa, Federica; Bronzi, Danilo; Tisa, Simone; Tosi, Alberto; Zappa, Franco

    2015-03-01

    Silicon Photomultipliers (SiPMs) are emerging single photon detectors used in many applications requiring large active area, photon-number resolving capability and immunity to magnetic fields. We present three families of analog SiPM fabricated in a reliable and cost-effective fully standard planar CMOS technology with a total photosensitive area of 1×1 mm2. These three families have different active areas with fill-factors (21%, 58.3%, 73.7%) comparable to those of commercial SiPM, which are developed in vertical (current flow) custom technologies. The peak photon detection efficiency in the near-UV tops at 38% (fill-factor included) comparable to commercial custom-process ones and dark count rate density is just a little higher than the best-in-class commercial analog SiPMs. Thanks to the CMOS processing, these new SiPMs can be integrated together with active components and electronics both within the microcell and on-chip, in order to act at the microcell level or to perform global pre-processing. We also report CMOS digital SiPMs in the same standard CMOS technology, based on microcells with digitalized processing, all integrated on-chip. This CMOS digital SiPMs has four 32×1 cells (128 microcells), each consisting of SPAD, active quenching circuit with adjustable dead time, digital control (to switch off noisy SPADs and readout position of detected photons), and fast trigger output signal. The achieved 20% fill-factor is still very good.

  11. Contact CMOS imaging of gaseous oxygen sensor array

    PubMed Central

    Daivasagaya, Daisy S.; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C.; Chodavarapu, Vamsy P.; Bright, Frank V.

    2014-01-01

    We describe a compact luminescent gaseous oxygen (O2) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O2-sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp)3]2+) encapsulated within sol–gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors. PMID:24493909

  12. Discharge chamber of high-current ion source with cold hollow cathode

    SciTech Connect

    Glazunov, V.N.; Grechanyi, V.G.; Metel', A.S.

    1988-08-01

    The discharge chamber of a high-current ion source with a sectional cold hollow cathode of conical shape formed by 44 coaxial rings and an emission grid is described. For a relative loss aperture of approx. = 1% of the fast oscillating electrons from the cavity, the discharge voltage does not exceed 500 V for currents of up to 200 A and helium or argon pressures of less than or equal to 10/sup -1/ Pa. Stable conditions are obtained with ion-extraction factors of up to 13% and a nonuniformity of ion-current density of approx. = 10% in the central zone of a grid with a diameter of up to 20 cm for a discharge current of 200 A and a pulse duration of up to 1 msec.

  13. A new curvature compensation technique for CMOS voltage reference using |VGS| and ΔVBE

    NASA Astrophysics Data System (ADS)

    Xuemin, Li; Mao, Ye; Gongyuan, Zhao; Yun, Zhang; Yiqiang, Zhao

    2016-05-01

    A new mixed curvature compensation technique for CMOS voltage reference is presented, which resorts to two sub-references with complementary temperature characteristics. The first sub-reference is the source–gate voltage |VGS|p of a PMOS transistor working in the saturated region. The second sub-reference is the weighted sum of gate–source voltages |VGS|n of NMOS transistors in the subthreshold region and the difference between two base–emitter voltages ΔVBE of bipolar junction transistors (BJTs). The voltage reference implemented utilizing the proposed curvature compensation technique exhibits a low temperature coefficient and occupies a small silicon area. The proposed technique was verified in 0.18 μm standard CMOS process technology. The performance of the circuit has been measured. The measured results show a temperature coefficient as low as 12.7 ppm/°C without trimming, over a temperature range from ‑40 to 120 °C, and the current consumption is 50 μA at room temperature. The measured power-supply rejection ratio (PSRR) is ‑31.2 dB @ 100 kHz. The circuit occupies an area of 0.045 mm2. Project supported by the National Natural Science Foundation of China (No. 61376032).

  14. A high speed, low power consumption LVDS interface for CMOS pixel sensors

    NASA Astrophysics Data System (ADS)

    Shi, Zhan; Tang, Zhenan; Tian, Yong; Pham, Hung; Valin, Isabelle; Jaaskelainen, Kimmo

    2015-01-01

    The use of CMOS Pixel Sensors (CPSs) offers a promising approach to the design of vertex detectors in High Energy Physics (HEP) experiments. As the CPS equipping the upgraded Solenoidal Tracker at RHIC (STAR) pixel detector, ULTIMATE perfectly illustrates the potential of CPSs for HEP applications. However, further development of CPSs with respect to readout speed is required to fulfill the readout time requirement of the next generation HEP detectors, such as the upgrade of A Large Ion Collider Experiment (ALICE) Inner Tracking System (ITS), the International Linear Collider (ILC), and the Compressed Baryonic Matter (CBM) vertex detectors. One actual limitation of CPSs is related to the speed of the Low-Voltage Differential Signaling (LVDS) circuitry implementing the interface between the sensor and the Data Acquisition (DAQ) system. To improve the transmission rate while keeping the power consumption at a low level, a source termination technique and a special current comparator were adopted for the LVDS driver and receiver, respectively. Moreover, hardening techniques are used. The circuitry was designed and submitted for fabrication in a 0.18-μm CMOS Image Sensor (CIS) process at the end of 2011. The test results indicated that the LVDS driver and receiver can operate properly at the data rate of 1.2 Gb/s with power consumption of 19.6 mW.

  15. Proof of principle study of the use of a CMOS active pixel sensor for proton radiography

    SciTech Connect

    Seco, Joao; Depauw, Nicolas

    2011-02-15

    Purpose: Proof of principle study of the use of a CMOS active pixel sensor (APS) in producing proton radiographic images using the proton beam at the Massachusetts General Hospital (MGH). Methods: A CMOS APS, previously tested for use in s-ray radiation therapy applications, was used for proton beam radiographic imaging at the MGH. Two different setups were used as a proof of principle that CMOS can be used as proton imaging device: (i) a pen with two metal screws to assess spatial resolution of the CMOS and (ii) a phantom with lung tissue, bone tissue, and water to assess tissue contrast of the CMOS. The sensor was then traversed by a double scattered monoenergetic proton beam at 117 MeV, and the energy deposition inside the detector was recorded to assess its energy response. Conventional x-ray images with similar setup at voltages of 70 kVp and proton images using commercial Gafchromic EBT 2 and Kodak X-Omat V films were also taken for comparison purposes. Results: Images were successfully acquired and compared to x-ray kVp and proton EBT2/X-Omat film images. The spatial resolution of the CMOS detector image is subjectively comparable to the EBT2 and Kodak X-Omat V film images obtained at the same object-detector distance. X-rays have apparent higher spatial resolution than the CMOS. However, further studies with different commercial films using proton beam irradiation demonstrate that the distance of the detector to the object is important to the amount of proton scatter contributing to the proton image. Proton images obtained with films at different distances from the source indicate that proton scatter significantly affects the CMOS image quality. Conclusion: Proton radiographic images were successfully acquired at MGH using a CMOS active pixel sensor detector. The CMOS demonstrated spatial resolution subjectively comparable to films at the same object-detector distance. Further work will be done in order to establish the spatial and energy resolution of the

  16. TRIASSIC: the Time-Resolved Industrial Alpha-Source Scanning Induced Current microscope

    NASA Astrophysics Data System (ADS)

    Pallone, Arthur

    Time-resolved ion beam induced current (TRIBIC) microscopy yields useful information such as carrier mobility and lifetimes in semiconductors and defect locations in devices; however, traditional TRIBIC uses large, expensive particle accelerators that require specialized training to operate and maintain. The time-resolved industrial alpha-source scanning induced current (TRIASSIC) microscope transforms TRIBIC by replacing the particle accelerator facility with an affordable, tabletop instrument suitable for use in research and education at smaller colleges and universities. I will discuss the development of, successes with, setbacks to and future directions for TRIASSIC.

  17. Fiber-optic current sensor with self-compensation of source wavelength changes.

    PubMed

    Müller, G M; Quan, W; Lenner, M; Yang, L; Frank, A; Bohnert, K

    2016-06-15

    We demonstrate a method for self-compensation of scale factor changes of an interferometric fiber-optic current sensor caused by source wavelength shifts, e.g., due to changes in source temperature or drive current. An adequately tailored fiber-optic retarder in the optical circuit introduces wavelength-dependent mixing of the orthogonal polarization modes of the sensor. The resulting change in scale factor balances the variation of the Faraday effect with wavelength. The wavelength dependence of the sensor is suppressed by more than an order of magnitude to <0.2% over wavelength spans of at least 10 nm around 1305 nm. The retarder is designed as an athermal device for operation between -40°C and 80°C. PMID:27304309

  18. Changing sources and sinks of carbon in boreal ecosystems of Interior Alaska: Current and future perspectives

    NASA Astrophysics Data System (ADS)

    Douglas, T. A.; Jones, M.; Hiemstra, C. A.

    2012-12-01

    Future climate scenarios predict a roughly 5°C increase in mean annual air temperatures for the Alaskan Interior over the next 80 years. Increasing temperatures and greater frequency and severity of climate-induced disturbances such as wildfires will be enough to initiate permafrost degradation in many areas of Alaska, leading to major changes in surface hydrology and ecosystem structure and function. This, in turn, is expected to alter the current inventories of carbon sources and sinks in the region and provide a management challenge for carbon itemization efforts. To assist land managers in adapting and planning for potential changes in Interior Alaska carbon cycling we synthesize information on climate, ecosystem processes, vegetation, and soil, permafrost, and hydrologic regimes in Interior Alaska. Our goal is to provide an assessment of the current and likely future regime of Interior Alaska carbon sources and sinks. For our carbon assessment we: 1) synthesize the most recent results from numerous studies on the carbon cycle with a focus on research from the Alaskan boreal biome, 2) assemble a summary of estimates of carbon sources in soil and vegetation in Interior Alaska, 3) categorize carbon sources and sinks for predominant Interior Alaska ecosystems, and 4) identify expected changes in sources and sinks with climate change and human activities. This information is used to provide recommendations on potential actions land managers can take to minimize carbon export from the boreal forest. Though the results from our project are geared primarily toward policy makers and land managers we also provide recommendations for filling research gaps that currently present uncertainty in our understanding of the carbon cycle in boreal forest ecosystems of Interior Alaska.

  19. Current progress and future prospects of the VITA based neutron source.

    PubMed

    Aleynik, V; Bashkirtsev, A; Kanygin, V; Kasatov, D; Kuznetsov, A; Makarov, A; Schudlo, I; Sorokin, I; Taskaev, S; Tiunov, M

    2014-06-01

    At the BINP, a pilot accelerator based epithermal neutron source is now in use. Most recent investigations on the facility are related with studying the dark current, X-ray radiation measuring, optimization of H(-)-beam injection and new gas stripping target calibrating. The results of these studies, ways of providing stability to the accelerator are presented and discussed, as well as the ways of creating the therapeutic beam and strategies of applying the facility for clinical use. PMID:24369890

  20. Improved PHIP polarization using a precision, low noise, voltage controlled current source

    NASA Astrophysics Data System (ADS)

    Agraz, Jose; Grunfeld, Alexander; Cunningham, Karl; Li, Debiao; Wagner, Shawn

    2013-10-01

    Existing para-hydrogen induced polarization (PHIP) instrumentation relies on magnetic fields to hyperpolarize substances. These hyperpolarized substances have enhanced magnetic resonance imaging (MRI) signals over 10,000 fold, allowing for MRI at the molecular level. Required magnetic fields are generated by energizing a solenoid coil with current produced by a voltage controlled voltage source (VCVS), also known as a power supply. A VCVS lacks the current regulation necessary to keep magnetic field fluctuations to a minimum, which results in low PHIP polarization. A voltage controlled current source (VCCS) is an electric circuit that generates a steady flow of electrons proportional to an input voltage. A low noise VCCS provides the solenoid current flow regulation necessary to generate a stable static magnetic field (Bo). We discuss the design and implementation of a low noise, high stability, VCCS for magnetic field generation with minimum variations. We show that a precision, low noise, voltage reference driving a metal oxide semiconductor field effect transistor (MOSFET) based current sink, results in the current flow control necessary for generating a low noise and high stability Bo. In addition, this work: (1) compares current stability for ideal VCVS and VCCS models using transfer functions (TF), (2) develops our VCCS design's TF, (3) measures our VCCS design's thermal & 1/f noise, and (4) measures and compares hydroxyethyl-propionate (HEP) polarization obtained using a VCVS and our VCCS. The hyperpolarization of HEP was done using a PHIP instrument developed in our lab. Using our VCCS design, HEP polarization magnitude data show a statistically significant increase in polarization over using a VCVS. Circuit schematic, bill of materials, board layout, TF derivation, and Matlab simulations code are included as supplemental files.

  1. CMOS Integrated Single Electron Transistor Electrometry (CMOS-SET) circuit design for nanosecond quantum-bit read-out.

    SciTech Connect

    Gurrieri, Thomas M.; Lilly, Michael Patrick; Carroll, Malcolm S.; Levy, James E.

    2008-08-01

    Novel single electron transistor (SET) read-out circuit designs are described. The circuits use a silicon SET interfaced to a CMOS voltage mode or current mode comparator to obtain a digital read-out of the state of the qubit. The design assumes standard submicron (0.35 um) CMOS SOI technology using room temperature SPICE models. Implications and uncertainties related to the temperature scaling of these models to 100mK operation are discussed. Using this technology, the simulations predict a read-out operation speed of approximately Ins and a power dissipation per cell as low as 2nW for single-shot read-out, which is a significant advantage over currently used radio frequency SET (RF-SET) approaches.

  2. Design and characterization of the annular cathode high current pulsed electron beam source for circular components

    NASA Astrophysics Data System (ADS)

    Jiang, Wei; Wang, Langping; Wang, Xiaofeng

    2016-08-01

    In order to irradiate circular components with high current pulsed electron beam (HCPEB), an annular cathode based on carbon fiber bunches was designed and fabricated. Using an acceleration voltage of 25 kV, the maximum pulsed irradiation current and energy of this annular cathode can reach 7.9 kA and 300 J, respectively. The irradiation current density distribution of the annular cathode HCPEB source measured along the circumferential direction shows that the annular cathode has good emission uniformity. In addition, four 9310 steel substrates fixed uniformly along the circumferential direction of a metal ring substrate were irradiated by this annular cathode HCPEB source. The surface and cross-section morphologies of the irradiated samples were characterized by scanning electron microscopy (SEM). SEM images of the surface reveal that crater and surface undulation have been formed, which hints that the irradiation energy of the HCPEB process is large enough for surface modification of 9310 steel. Meanwhile, SEM cross-section images exhibit that remelted layers with a thickness of about 5.4 μm have been obtained in all samples, which proves that a good practical irradiation uniformity can be achieved by this annular cathode HCPEB source.

  3. A high current vacuum arc ion source for heavy ion fusion

    SciTech Connect

    Qi, N.; Gensler, S.W.; Prasad, R.R.; Krishnan, M.; Liu, F.; Brown, I.G.

    1997-12-31

    AASC is presently developing a vacuum arc ion source for Heavy Ion Fusion (HIF) and other commercial applications. Induction linear accelerators that produce energetic heavy ions beams are a prime candidate for power-producing fusion reactors. A source of heavy ions with low emittance and low beam noise, 1+ to 3+ charge states, {approx}0.5 A current, 5--20 {micro}s pulse widths and {approximately}10 Hz repetition rates is required. A gadolinium (A {approx} 158) ion beam with {approx}0.12 A beam current, 120 keV beam energy, {approx}2.5 cm diameter extraction aperture and 20 {micro}s pulse width has been produced for HIF studies. The authors have measured that >80% Gd ions were in the 2+ charge state, the beam current fluctuation level (rms) was {approx}1.5% and the beam emittance was {approx}0.3 {pi} mm mrad (normalized). With {approx}8 {times} 10{sup {minus}5} torr background gas pressure, the beam was well space-charge neutralized and good propagation of the 20 {micro}s long Gd ion beams was observed. Details of the work will be presented. The results of the experiment imply that the vacuum arc ion source is a highly promising candidate for HIF applications.

  4. Characterization and development of an event-driven hybrid CMOS x-ray detector

    NASA Astrophysics Data System (ADS)

    Griffith, Christopher

    2015-06-01

    Hybrid CMOS detectors (HCD) have provided great benefit to the infrared and optical fields of astronomy, and they are poised to do the same for X-ray astronomy. Infrared HCDs have already flown on the Hubble Space Telescope and the Wide-Field Infrared Survey Explorer (WISE) mission and are slated to fly on the James Webb Space Telescope (JWST). Hybrid CMOS X-ray detectors offer low susceptibility to radiation damage, low power consumption, and fast readout time to avoid pile-up. The fast readout time is necessary for future high throughput X-ray missions. The Speedster-EXD X-ray HCD presented in this dissertation offers new in-pixel features and reduces known noise sources seen on previous generation HCDs. The Speedster-EXD detector makes a great step forward in the development of these detectors for future space missions. This dissertation begins with an overview of future X-ray space mission concepts and their detector requirements. The background on the physics of semiconductor devices and an explanation of the detection of X-rays with these devices will be discussed followed by a discussion on CCDs and CMOS detectors. Next, hybrid CMOS X-ray detectors will be explained including their advantages and disadvantages. The Speedster-EXD detector and its new features will be outlined including its ability to only read out pixels which contain X-ray events. Test stand design and construction for the Speedster-EXD detector is outlined and the characterization of each parameter on two Speedster-EXD detectors is detailed including read noise, dark current, interpixel capacitance crosstalk (IPC), and energy resolution. Gain variation is also characterized, and a Monte Carlo simulation of its impact on energy resolution is described. This analysis shows that its effect can be successfully nullified with proper calibration, which would be important for a flight mission. Appendix B contains a study of the extreme tidal disruption event, Swift J1644+57, to search for

  5. Development of a high average current polarized electron source with long cathode operational lifetime

    SciTech Connect

    C. K. Sinclair; P. A. Adderley; B. M. Dunham; J. C. Hansknecht; P. Hartmann; M. Poelker; J. S. Price; P. M. Rutt; W. J. Schneider; M. Steigerwald

    2007-02-01

    Substantially more than half of the electromagnetic nuclear physics experiments conducted at the Continuous Electron Beam Accelerator Facility of the Thomas Jefferson National Accelerator Facility (Jefferson Laboratory) require highly polarized electron beams, often at high average current. Spin-polarized electrons are produced by photoemission from various GaAs-based semiconductor photocathodes, using circularly polarized laser light with photon energy slightly larger than the semiconductor band gap. The photocathodes are prepared by activation of the clean semiconductor surface to negative electron affinity using cesium and oxidation. Historically, in many laboratories worldwide, these photocathodes have had short operational lifetimes at high average current, and have often deteriorated fairly quickly in ultrahigh vacuum even without electron beam delivery. At Jefferson Lab, we have developed a polarized electron source in which the photocathodes degrade exceptionally slowly without electron emission, and in which ion back bombardment is the predominant mechanism limiting the operational lifetime of the cathodes during electron emission. We have reproducibly obtained cathode 1/e dark lifetimes over two years, and 1/e charge density and charge lifetimes during electron beam delivery of over 2?105???C/cm2 and 200 C, respectively. This source is able to support uninterrupted high average current polarized beam delivery to three experimental halls simultaneously for many months at a time. Many of the techniques we report here are directly applicable to the development of GaAs photoemission electron guns to deliver high average current, high brightness unpolarized beams.

  6. High current proton source based on ECR discharge sustained by 37.5 GHz gyrotron radiation

    NASA Astrophysics Data System (ADS)

    Skalyga, V.; Izotov, I.; Sidorov, A.; Razin, S.; Zorin, V.; Tarvainen, O.; Koivisto, H.; Kalvas, T.

    2012-10-01

    Formation of hydrogen ion beams with high intensity and low transverse emittance is one of the key challenges in accelerator technology. Present work is devoted to experimental investigation of proton beam production from dense plasma (Ne > 1013 cm-3) of an ECR discharge sustained by 37.5 GHz, 100 kW gyrotron radiation at SMIS 37 facility at IAP RAS. The anticipated advantages of the SMIS 37 gasdynamic ion source over the current state-of-the-art proton source technology based on 2.45 GHz hydrogen discharges are described. Experimental result obtained with different extraction configurations i.e. single- and multi-aperture systems are presented. It was demonstrated that ultra bright proton beam with approximately 4.5 mA current and 0.03 π·mm·mrad normalized emittance can be produced with the single-aperture (1 mm in diameter) extraction, the corresponding brightness being 5 A/(π·mm·mrad)2. For production of high current beams a multi-aperture extractor was used resulting to a record of 200 mA / 1.1 π·mm·mrad normalized emittance proton beam. The species fraction i.e. the ratio of H+ to H2+ current was recorded to be > 90 % for all extraction systems. A possibility of further enhancement of the beam parameters by improvements of the extraction system and its power supply is discussed.

  7. Enhancement of emission currents in plasma electron sources based on a low-pressure arc discharge

    NASA Astrophysics Data System (ADS)

    Koval, T. V.; Devyatkov, V. N.; Hung, Nguyen Bao

    2015-11-01

    The paper reports on a theoretical and experimental study of the discharge plasma generation with an enhanced electron emission current in a plasma electron source based on a low-pressure arc discharge with a grid-stabilized plasma emission boundary. The source operates at a pressure in the working chamber of p = 0.02-0.05 Pa (Ar), accelerating voltage of up to Ua = 10 kV, and longitudinal magnetic field for electron beam transport of up to Bz = 0.1 T. The experiments show that in the mode of electron emission from the plasma, the voltage Ud between the cathode and grid electrode changes its sign. The numerical simulation demonstrates that the plasma potential and voltage Ud depend on the electric field penetrating from the acceleration gap into the discharge region through the grid meshes, and on the discharge current, gas pressure, geometric transparency of the grid, and gas kind. It is shown that the main mechanisms responsible for the increase in the discharge current and electron emission current from the plasma are associated with secondary ion-electron emission from the emission electrode and with positive feedback between the region of cathode plasma generation and the channel of electron beam transport.

  8. Nanosecond monolithic CMOS readout cell

    DOEpatents

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  9. CMOS foveal image sensor chip

    NASA Technical Reports Server (NTRS)

    Bandera, Cesar (Inventor); Scott, Peter (Inventor); Sridhar, Ramalingam (Inventor); Xia, Shu (Inventor)

    2002-01-01

    A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

  10. High current proton beams production at Simple Mirror Ion Source 37.

    PubMed

    Skalyga, V; Izotov, I; Razin, S; Sidorov, A; Golubev, S; Kalvas, T; Koivisto, H; Tarvainen, O

    2014-02-01

    This paper presents the latest results of high current proton beam production at Simple Mirror Ion Source (SMIS) 37 facility at the Institute of Applied Physics (IAP RAS). In this experimental setup, the plasma is created and the electrons are heated by 37.5 GHz gyrotron radiation with power up to 100 kW in a simple mirror trap fulfilling the ECR condition. Latest experiments at SMIS 37 were performed using a single-aperture two-electrode extraction system. Proton beams with currents up to 450 mA at high voltages below 45 kV were obtained. The maximum beam current density was measured to be 600 mA/cm(2). A possibility of further improvement through the development of an advanced extraction system is discussed. PMID:24593436

  11. Validation of a quantized-current source with 0.2 ppm uncertainty

    SciTech Connect

    Stein, Friederike; Fricke, Lukas Scherer, Hansjörg; Hohls, Frank Leicht, Christoph; Götz, Martin; Krause, Christian; Behr, Ralf; Pesel, Eckart; Pierz, Klaus; Siegner, Uwe; Ahlers, Franz J.; Schumacher, Hans W.; Drung, Dietmar

    2015-09-07

    We report on high-accuracy measurements of quantized current, sourced by a tunable-barrier single-electron pump at frequencies f up to 1 GHz. The measurements were performed with an ultrastable picoammeter instrument, traceable to the Josephson and quantum Hall effects. Current quantization according to I = ef with e being the elementary charge was confirmed at f = 545 MHz with a total relative uncertainty of 0.2 ppm, improving the state of the art by about a factor of 5. The accuracy of a possible future quantum current standard based on single-electron transport was experimentally validated to be better than the best (indirect) realization of the ampere within the present SI.

  12. Spatiotemporal patterns of current source density in the prefrontal cortex of a behaving monkey.

    PubMed

    Sakamoto, Kazuhiro; Kawaguchi, Norihiko; Yagi, Kohei; Mushiake, Hajime

    2015-02-01

    One of the fundamental missions of neuroscience is to explore the input and output properties of neuronal networks to reveal their functional significance. However, it is technically difficult to examine synaptic inputs into neuronal circuits in behaving animals. Here, we conducted current source density (CSD) analysis on local field potentials (LFPs) recorded simultaneously using a multi-contact electrode in the prefrontal cortex (PFC) of a behaving monkey. We observed current sink task-dependent spatiotemporal patterns considered to reflect the synaptic input to neurons adjacent to the recording site. Specifically, the inferior convex current sink in the PFC was dominant during the delay period, whereas the current sink was prominent in the principal sulcus during the sample cue and test cue periods. Surprisingly, sulcus current sink patterns were spatially periodic, which corresponds to the columnar structure suggested by previous anatomical studies. The approaches used in the current study will help to elucidate how the PFC network performs executive functions according to its synaptic input. PMID:25027732

  13. A back-illuminated megapixel CMOS image sensor

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata; Cunningham, Thomas; Nikzad, Shouleh; Hoenk, Michael; Jones, Todd; Wrigley, Chris; Hancock, Bruce

    2005-01-01

    In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.

  14. High-Voltage-Input Level Translator Using Standard CMOS

    NASA Technical Reports Server (NTRS)

    Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

    2011-01-01

    proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors

  15. High current H- ion sources for the large helical device neutral beam injector

    NASA Astrophysics Data System (ADS)

    Oka, Y.; Tsumori, K.; Takeiri, Y.; Kaneko, O.; Osakabe, M.; Asano, E.; Kawamoto, T.; Akiyama, R.

    1998-02-01

    Two large helical device-neutral beam injector (LHD-NBI) ion sources were fabricated and tested in the test stand for producing a beam of 180 keV×40 A with H- ions. They are Cesiated multicusp ion sources with a rectangular discharge chamber and a single stage multihole accelerator. These are scaled up from the 16 A H- ion sources in the National Institute for Fusion Science (NIFS). A plasma source with a high aspect ratio was operated stably with an arc power up to ˜300 kW for 10 s, after balancing of the electron emission from the filaments was made. A satisfactorily dense and uniform plasma without mode flip was produced. Electrons accompanied by H- ions were reduced by an extraction grid with the electron trap, instead of straight holes. The electron beam component caused by the stripping of electrons from H- ions was detected with an array of calorimeters at the bottom of the connecting duct. At the first stage of the test, one of the five segment grids of the accelerator was installed. An H- ion current of 5.5 A with a current density of 27.5 mA/cm2 for 0.6 s was obtained with an arc power of 135 kW with Cs introduction. A high arc power efficiency for H- ions was observed. The intense cusp field is considered to be the important factor to improve this. The beam divergence angle at 10.4 m downstream was ˜10 mrad. Since these results satisfied our design, a full segment accelerator was tested in the next stage. Beam conditioning for five segment grids is underway. So far, an H- current of 21.0 A has been obtained at 106 keV for 0.6 s. As a result, we had good prospects for achieving the full specification of LHD-NBI ion sources, especially for achieving higher current and focused beam as well as for long pulse. The neutral beam injection experiment for the LHD is scheduled to start in the middle of 1998.

  16. High current vacuum-arc ion source for ion implantation and coating deposition technologies

    SciTech Connect

    Ryabchikov, Alexander I.; Ryabchikov, Igor A.; Stepanov, Igor B.; Dektyarev, Sergey V.

    2006-03-15

    This work is devoted to the development and investigation of a high current ion source based on dc vacuum-arc plasma generation. Extraction and acceleration of ion beams are realized in a repetitively pulsed mode with the pulse repetition rate up to 200 pps, the pulse duration up to 400 {mu}s, the accelerating voltage up to 40 kV, and the pulsed ion-beam current up to 2 A. To remove microparticles from the vacuum-arc plasma a straight-line plasma filter is used. Examples of the source use for realization of high-intensity and high-concentration ion implantation regimes including those with formation of doped layers at depths that exceed ion projective range for more than an order of magnitude are presented. At the expense of change in order and intensity of ion and plasma material treatment, the advantage of application of one source for execution of material surface pretreatment and activation regimes, formation of wide transition layers between the substrate and coating, coating deposition, and high-intensity ion mixing using ions of the same type was shown.

  17. Simulation of a distributed current source in a linear format CFA

    NASA Astrophysics Data System (ADS)

    Pearlman, Marcus; Browning, Jim

    2015-11-01

    A fundamental limit on Crossed-Field Amplifiers (CFA) gain is beam to RF power ratio. With too much beam power, the RF signal on the slow wave circuit is ``swamped.'' It is proposed here that a controllable, distributed cathode source can be used to tailor current injection and optimize gain. In this work a linear format CFA with a meander line slow wave circuit is tested experimentally and numerically using Vsim. Simulations of the original design, which operates at 900 MHz, shows < 1dB gain at beam currents >100 mA. This beam current is higher than the capabilities of the Field Emitter Array cathodes available to the group; therefore no experimental gain was observed. To be able to compare simulation to experiment, the CFA model under study was changed to the experiment used at Northeastern University in 1991, which also uses a meander line circuit and an injected beam configuration. Direct comparisons between the simulation and this experiment are performed to validate the model. Additional simulations study the effect of different current distributions on gain, bandwidth, and efficiency. Practical considerations such as how to control the energy of the beam separately from the sole potential in order to minimize lost current to sole are also examined. This research was supported by the Air Force Office of Scientific Research and the department of Electrical and Computer Engineering at Boise State University.

  18. A CMOS image sensor dedicated to medical gamma camera application

    NASA Astrophysics Data System (ADS)

    Salahuddin, Nur S.; Paindavoine, Michel; Ginhac, Dominique; Parmentier, Michel; Tamda, Najia

    2005-03-01

    Generally, medical Gamma Camera are based on the Anger principle. These cameras use a scintillator block coupled to a bulky array of photomultiplier tube (PMT). To simplify this, we designed a new integrated CMOS image sensor in order to replace bulky PMT photodetetors. We studied several photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Mikro Systeme (AMS). Each sensor pixel in the array occupies respectively, 1mm x 1mm area, 0.5mm x 0.5mm area and 0.2mm 0.2mm area with fill factor 98 % and total chip area is 2 square millimeters. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low green light emitting diode (less than 0.5 lux) . These results allow to use our sensor in new Gamma Camera solid-state concept.

  19. Fundamental performance differences between CMOS and CCD imagers: Part II

    NASA Astrophysics Data System (ADS)

    Janesick, James; Andrews, James; Tower, John; Grygon, Mark; Elliott, Tom; Cheng, John; Lesser, Michael; Pinter, Jeff

    2007-09-01

    A new class of CMOS imagers that compete with scientific CCDs is presented. The sensors are based on deep depletion backside illuminated technology to achieve high near infrared quantum efficiency and low pixel cross-talk. The imagers deliver very low read noise suitable for single photon counting - Fano-noise limited soft x-ray applications. Digital correlated double sampling signal processing necessary to achieve low read noise performance is analyzed and demonstrated for CMOS use. Detailed experimental data products generated by different pixel architectures (notably 3TPPD, 5TPPD and 6TPG designs) are presented including read noise, charge capacity, dynamic range, quantum efficiency, charge collection and transfer efficiency and dark current generation. Radiation damage data taken for the imagers is also reported.

  20. The neutral current sheet and its radiation pairs of side sources in coronal mass ejections

    NASA Astrophysics Data System (ADS)

    Ji, Shu-Chen

    Using the data observed with the soft X-ray telescope, hard X-ray telescope aboard on Yohkoh and the Nobeyama Radioheliograph on 1998 April 23, a comprehensive study on soft X-ray coronal mass ejection (SXRCME) and radio Type IV burst is carried out and some significant results are obtained as follows: A magnetic capacity belt (MCB) between two magnetic dipole sources (MDSs) was found and there were only a few activitation sources (ASs). During the MCB changed into a magnetic energy belt (MEB) by the ASs, activating energy and shining material both concentrated to the neutral current sheet (NCS) in the course of its formation. When two MDSs were put through by the MEB, the NCS formed and the SXRCME occurred. The matter ejected not only from the NCS, but also from the whole MEB. The expanding loop of the SXRCME had two foot points, both were just two MDSs. The head of the expanding loop always tended to the foot point of the weak source, because it was equilibrium point of magnetic pressures coming from two foot points. For this reason, its locus was neutral line. From this, the neutral line can also determine the position of NCS. Finally, the radiation pairs of side sources of NCS on the MEB are found.

  1. Leakage current reduction in junctionless tunnel FET using a lightly doped source

    NASA Astrophysics Data System (ADS)

    Basak, Shibir; Asthana, Pranav Kumar; Goswami, Yogesh; Ghosh, Bahniman

    2015-03-01

    In this paper, we explain the problem of dramatic OFF-state leakage in junctionless tunnel field effect transistor (JLTFET) for a channel thickness greater than 10 nm. In JLTFET, with channel width greater than 10 nm, the depletion region primarily remains confined below the dielectric-semiconductor interface. Hence, we tend to incur significant leakage through the center of the device. With the help of 2D device simulations, we demonstrate that the cause of the leakage current is predominantly due to thermal injection in the source region and is concentrated through the center of the device. We suggest a technique of using a lightly doped source region, below the p-gate to increase the barrier and prevent any leakage. The proposed alteration records an improved I ON/ I OFF ratio for JLTFET for a channel of width 20 nm.

  2. Measurement of Turbulence with Acoustic Doppler Current Profilers - Sources of Error and Laboratory Results

    USGS Publications Warehouse

    Nystrom, E.A.; Oberg, K.A.; Rehmann, C.R.

    2002-01-01

    Acoustic Doppler current profilers (ADCPs) provide a promising method for measuring surface-water turbulence because they can provide data from a large spatial range in a relatively short time with relative ease. Some potential sources of errors in turbulence measurements made with ADCPs include inaccuracy of Doppler-shift measurements, poor temporal and spatial measurement resolution, and inaccuracy of multi-dimensional velocities resolved from one-dimensional velocities measured at separate locations. Results from laboratory measurements of mean velocity and turbulence statistics made with two pulse-coherent ADCPs in 0.87 meters of water are used to illustrate several of inherent sources of error in ADCP turbulence measurements. Results show that processing algorithms and beam configurations have important effects on turbulence measurements. ADCPs can provide reasonable estimates of many turbulence parameters; however, the accuracy of turbulence measurements made with commercially available ADCPs is often poor in comparison to standard measurement techniques.

  3. PIG Ion Source with Permanent Magnets: Model Based Anode Current Return Circuit

    NASA Astrophysics Data System (ADS)

    Babapour Ghadikolaee, Mohammad Reza

    2012-12-01

    Ion sources are widely used in fusion technologies. A new high voltage pulsed power supply for use in penning ion gauge ion sources is proposed in this paper. To use discharge current, a diode-capacitor bank is included. The power supply is composed of 3 stages. A fast switching transistor is used as a single switch which is trigged by a pulse generator. A transformer is used to level up the voltage up to 2 kV without power loss. It is also used to isolate input and high voltage output. Also; the proposed high voltage power supply implementation uses a diode-capacitor bank whose capacitors are charged during plasma discharge. This system structure gives compactness and easiness to implement the total system which in combination with inexpensive commercially available components, makes the unit versatile and inexpensive.

  4. X-ray framing camera for pulsed, high current, electron beam x-ray sources

    NASA Astrophysics Data System (ADS)

    Failor, B. H.; Rodriguez, J. C.; Riordan, J. C.; Lojewski, D. Y.

    2007-07-01

    High power x-ray sources built for nuclear weapons effects testing are evolving toward larger overall diameters and smaller anode cathode gaps. We describe a framing camera developed to measure the time-evolution of these 20-50 ns pulsed x-ray sources produced by currents in the 1.5-2.5 MA range and endpoint voltages between 0.2 and 1.5 MV. The camera has up to 4 frames with 5 ns gate widths; the frames are separated by 5 ns. The image data are recorded electronically with a gated intensified CCD camera and the data are available immediately following a shot. A fast plastic scintillator (2.1 ns decay time) converts the x-rays to visible light and, for high sensitivity, a fiber optic imaging bundle carries the light to the CCD input. Examples of image data are shown.

  5. Accelerated life testing effects on CMOS microcircuit characteristics

    NASA Technical Reports Server (NTRS)

    1977-01-01

    Accelerated life tests were performed on CMOS microcircuits to predict their long term reliability. The consistency of the CMOS microcircuit activation energy between the range of 125 C to 200 C and the range 200 C to 250 C was determined. Results indicate CMOS complexity and the amount of moisture detected inside the devices after testing influences time to failure of tested CMOS devices.

  6. A CCD/CMOS process for integrated image acquisition and early vision signal processing

    NASA Astrophysics Data System (ADS)

    Keast, Craig L.; Sodini, Charles G.

    The development of technology which integrates a four phase, buried-channel CCD in an existing 1.75 micron CMOS process is described. The four phase clock is employed in the integrated early vision system to minimize process complexity. Signal corruption is minimized and lateral fringing fields are enhanced by burying the channel. The CMOS process for CCD enhancement is described, which highlights a new double-poly process and the buried channel, and the integration is outlined. The functionality and transfer efficiency of the process enhancement were appraised by measuring CCD shift registers at 100 kHz. CMOS measurement results are presented, which include threshold voltages, poly-to-poly capacitor voltage and temperature coefficients, and dark current. A CCD/CMOS processor is described which combines smoothing and segmentation operations. The integration of the CCD and the CMOS processes is found to function due to the enhancement-compatible design of the CMOS process and the thorough employment of CCD module baseline process steps.

  7. Transverse distribution of beam current oscillations of a 14 GHz electron cyclotron resonance ion source.

    PubMed

    Tarvainen, O; Toivanen, V; Komppula, J; Kalvas, T; Koivisto, H

    2014-02-01

    The temporal stability of oxygen ion beams has been studied with the 14 GHz A-ECR at JYFL (University of Jyvaskyla, Department of Physics). A sector Faraday cup was employed to measure the distribution of the beam current oscillations across the beam profile. The spatial and temporal characteristics of two different oscillation "modes" often observed with the JYFL 14 GHz ECRIS are discussed. It was observed that the low frequency oscillations below 200 Hz are distributed almost uniformly. In the high frequency oscillation "mode," with frequencies >300 Hz at the core of the beam, carrying most of the current, oscillates with smaller amplitude than the peripheral parts of the beam. The results help to explain differences observed between the two oscillation modes in terms of the transport efficiency through the JYFL K-130 cyclotron. The dependence of the oscillation pattern on ion source parameters is a strong indication that the mechanisms driving the fluctuations are plasma effects. PMID:24593488

  8. Reprint of: High current liquid metal ion source using porous tungsten multiemitters.

    PubMed

    Tajmar, M; Vasiljevich, I; Grienauer, W

    2011-05-01

    We recently developed an indium Liquid-Metal-Ion-Source that can emit currents from sub-μA up to several mA. It is based on a porous tungsten crown structure with 28 individual emitters, which is manufactured using Micro-Powder Injection Molding (μPIM) and electrochemical etching. The emitter combines the advantages of internal capillary feeding with excellent emission properties due to micron-size tips. Significant progress was made on the homogeneity of the emission over its current-voltage characteristic as well as on investigating its long-term stability. This LMIS seems very suitable for space propulsion as well as for micro/nano manufacturing applications with greatly increased milling/drilling speeds. This paper summarizes the latest developments on our porous multiemitters with respect to manufacturing, emission properties and long-term testing. PMID:21288642

  9. Numerical studies of the flux-to-current ratio method in the KIPT neutron source facility

    SciTech Connect

    Cao, Y.; Gohar, Y.; Zhong, Z.

    2013-07-01

    The reactivity of a subcritical assembly has to be monitored continuously in order to assure its safe operation. In this paper, the flux-to-current ratio method has been studied as an approach to provide the on-line reactivity measurement of the subcritical system. Monte Carlo numerical simulations have been performed using the KIPT neutron source facility model. It is found that the reactivity obtained from the flux-to-current ratio method is sensitive to the detector position in the subcritical assembly. However, if multiple detectors are located about 12 cm above the graphite reflector and 54 cm radially, the technique is shown to be very accurate in determining the k{sub eff} this facility in the range of 0.75 to 0.975. (authors)

  10. Reduction of beam current noise in the FNAL magnetron ion source

    SciTech Connect

    Bollinger, D. S. Karns, P. R. Tan, C. Y.

    2015-04-08

    The new FNAL Injector Line with a circular dimple magnetron ion source has been operational since December of 2012. Since the new injector came on line there have been variations in the H- beam current flattop observed near the downstream end of the Linac. Several different cathode geometries including a hollow cathode suggested by Dudnikov [1] were tried. Previous studies also showed that different mixtures of hydrogen and nitrogen had an effect on beam current noise [2]. We expanded on those studies by trying mixtures ranging from (0.25% nitrogen, 99.75% hydrogen) to (3% nitrogen, 97% hydrogen). The results of these studies in our test stand will be presented in this paper.