Science.gov

Sample records for cmos current sources

  1. Current-mode CMOS hybrid image sensor

    NASA Astrophysics Data System (ADS)

    Benyhesan, Mohammad Kassim

    Digital imaging is growing rapidly making Complimentary Metal-Oxide-Semi conductor (CMOS) image sensor-based cameras indispensable in many modern life devices like cell phones, surveillance devices, personal computers, and tablets. For various purposes wireless portable image systems are widely deployed in many indoor and outdoor places such as hospitals, urban areas, streets, highways, forests, mountains, and towers. However, the increased demand on high-resolution image sensors and improved processing features is expected to increase the power consumption of the CMOS sensor-based camera systems. Increased power consumption translates into a reduced battery life-time. The increased power consumption might not be a problem if there is access to a nearby charging station. On the other hand, the problem arises if the image sensor is located in widely spread areas, unfavorable to human intervention, and difficult to reach. Given the limitation of energy sources available for wireless CMOS image sensor, an energy harvesting technique presents a viable solution to extend the sensor life-time. Energy can be harvested from the sun light or the artificial light surrounding the sensor itself. In this thesis, we propose a current-mode CMOS hybrid image sensor capable of energy harvesting and image capture. The proposed sensor is based on a hybrid pixel that can be programmed to perform the task of an image sensor and the task of a solar cell to harvest energy. The basic idea is to design a pixel that can be configured to exploit its internal photodiode to perform two functions: image sensing and energy harvesting. As a proof of concept a 40 x 40 array of hybrid pixels has been designed and fabricated in a standard 0.5 microm CMOS process. Measurement results show that up to 39 microW of power can be harvested from the array under 130 Klux condition with an energy efficiency of 220 nJ /pixel /frame. The proposed image sensor is a current-mode image sensor which has several

  2. Lower-Dark-Current, Higher-Blue-Response CMOS Imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata; Cunningham, Thomas; Hancock, Bruce

    2008-01-01

    Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated-circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal-handling capacities, relative to those of prior CMOS imagers. The main conclusion that can be drawn from a study of the causes of dark currents in prior CMOS imagers is that dark currents could be reduced by relocating p/n junctions away from Si/SiO2 interfaces. In addition to reflecting this conclusion, the improved designs include several other features to counteract dark-current mechanisms and enhance performance.

  3. A new architecture of current-mode CMOS TDI Sensor

    NASA Astrophysics Data System (ADS)

    Ji, Cheng; Chen, Yongping

    2015-10-01

    Nowadays, CMOS sensors still suffer from the problem of low SNR, especially in the stage of low illumination and high relative scanning velocity. Lots of methods have been develop to overcome this problem. Among these researches, TDI (Time Delay Integration) architecture is a more natural choice, which is natively supported by CCD sensors. In this paper a new kind of proposed current-mode sensor is used to achieve TDI operation in analog domain. The circuit is composed of three main parts. At first, a current-type pixel is proposed, in which the active MOSFET is operated in the triode region to ensure the output current is linearly dependent on the gate voltage and avoid the reduction of threshold voltage in the traditional voltage mode pixels, such as 3T, 4T which use the source followers as its active part. Then a discrete double sampling (DDS) unit, which is operated in the form of currents is used to efficiently reduce the fixed pattern noise (FPN) and make the output is independent of reset voltage of pixels. For accumulation, an improved current mirror adder under controlled of timing circuits is proposed to overcome the problem of saturation suffered in voltage domain. Some main noise sources, especially come from analog sample and holds capacitors and switches is analyzed. Finally, simulation results with CSMC 0.5um technology and Cadence IC show that the proposed method is reasonable and efficient to improve the SNR.

  4. A new circuit technique for reduced leakage current in Deep Submicron CMOS technologies

    NASA Astrophysics Data System (ADS)

    Schmitz, A.; Tielert, R.

    2005-05-01

    Modern CMOS processes in the Deep Submicron regime are restricted to supply voltages below 2 volts and further to account for the transistors' field strength limitations and to reduce the power per logic gate. To maintain the high switching performance, the threshold voltage must be scaled according with the supply voltage. However, this leads to an increased subthreshold current of the transistors in standby mode (VGS=0). Another source of leakage is gate current, which becomes significant for gate oxides of 3nm and below. We propose a Self-Biasing Virtual Rails (SBVR) - CMOS technique which acts like an adaptive local supply voltage in case of standby mode. Most important sources of leakage currents are reduced by this technique. Moreover, SBVR-CMOS is capable of conserving stored information in sleep mode, which is vital for memory circuits. Memories are exposed to radiation causing soft errors. This well-known problem becomes even worse in standby mode of typical SRAMs, that have low driving performance to withstand alpha particle hits. In this paper, a 16-transistor SRAM cell is proposed, which combines the advantage of extremely low leakage currents with a very high soft error stability.

  5. A compact picosecond pulsed laser source using a fully integrated CMOS driver circuit

    NASA Astrophysics Data System (ADS)

    He, Yuting; Li, Yuhua; Yadid-Pecht, Orly

    2016-03-01

    Picosecond pulsed laser source have applications in areas such as optical communications, biomedical imaging and supercontinuum generation. Direct modulation of a laser diode with ultrashort current pulses offers a compact and efficient approach to generate picosecond laser pulses. A fully integrated complementary metaloxide- semiconductor (CMOS) driver circuit is designed and applied to operate a 4 GHz distributed feedback laser (DFB). The CMOS driver circuit combines sub-circuits including a voltage-controlled ring oscillator, a voltagecontrolled delay line, an exclusive-or (XOR) circuit and a current source circuit. Ultrashort current pulses are generated by the XOR circuit when the delayed square wave is XOR'ed with the original square wave from the on-chip oscillator. Circuit post-layout simulation shows that output current pulses injected into an equivalent circuit load of the laser have a pulse full width at half maximum (FWHM) of 200 ps, a peak current of 80 mA and a repetition rate of 5.8 MHz. This driver circuit is designed in a 0.13 μm CMOS process and taped out on a 0.3 mm2 chip area. This CMOS chip is packaged and interconnected with the laser diode on a printed circuit board (PCB). The optical output waveform from the laser source is captured by a 5 GHz bandwidth photodiode and an 8 GHz bandwidth oscilloscope. Measured results show that the proposed laser source can output light pulses with a pulse FWHM of 151 ps, a peak power of 6.4 mW (55 mA laser peak forward current) and a repetition rate of 5.3 MHz.

  6. Novel source follower transistor structure without lightly doped drain for high performance CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Song, Hyeong-Sub; Kwon, Sung-Kyu; Jeon, So-Ra; Oh, Dong-Jun; Lee, Ga-Won; Lee, Hi-Deok

    2016-08-01

    To realize high-resolution pixels in the CMOS image sensor, it is necessary to reduce low-frequency noise, particularly random telegraph signal (RTS) noise of the source-follower transistor (SFT). To achieve less relative variation of drain noise current, ΔI D/I D, a metal–oxide–semiconductor field-effect transistor structure without the lightly doped drain (LDD) for the SFT transistor is proposed. Then, a comparison of RTS noise characteristics between the proposed SFT structure without LDD and the conventional SFT structure with LDD was conducted. Although the RTS noise occurrence probability of the proposed SFT structure without LDD is somewhat greater than that of the conventional SFT structure with LDD, the amplitude of relative variation of drain noise current of the proposed SFT structure is significantly less than that of the conventional SFT. Despite changes in several factors in the proposed SFT, such as effective channel length, trap depth profile in gate oxide, and random dopant fluctuation (RDF), it is believed that the change of trap depth profile is a primary factor for the improved RTS characteristic. Therefore, the proposed SFT is highly desirable for the high-resolution CMOS image sensor.

  7. Voltage controlled current source

    DOEpatents

    Casne, Gregory M.

    1992-01-01

    A seven decade, voltage controlled current source is described for use in testing intermediate range nuclear instruments that covers the entire test current range of from 10 picoamperes to 100 microamperes. High accuracy is obtained throughout the entire seven decades of output current with circuitry that includes a coordinated switching scheme responsive to the input signal from a hybrid computer to control the input voltage to an antilog amplifier, and to selectively connect a resistance to the antilog amplifier output to provide a continuous output current source as a function of a preset range of input voltage. An operator controlled switch provides current adjustment for operation in either a real-time simulation test mode or a time response test mode.

  8. The effects of transistor source-to-gate bridging faults in complex CMOS gates

    NASA Astrophysics Data System (ADS)

    Visweswaran, G. S.; Ali, Akhtar-Uz-Zaman M.; Lala, Parag K.; Hartmann, Carlos R. P.

    1991-06-01

    A study of the effect of gate-to-source bridging faults in the pull-up section of a complex CMOS gate is presented. The manifestation of these faults depends on the resistance value of the connection causing the bridging. It is shown that such faults manifest themselves either as stuck-at or stuck-open faults and can be detected by tests for stuck-at and stuck-open faults generated for the equivalent logic current. It is observed that for transistor channel lengths larger than 1 microns there exists a range of values of the bridging resistance for which the fault behaves as a pseudo-stuck-open fault.

  9. A novel pixel design with hybrid type isolation scheme for low dark current in CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Choi, Sung Ho; Kim, Yi Tae; Oh, Min Seok; Park, Young Hwan; Cho, Jeong Jin; Jang, Young Heub; Han, Hyung Jun; Choi, Jong Won; Park, Ho Woo; Jung, Sang Il; Oh, Hoon Sang; Ahn, Jung Chak; Goto, Hiroshige; Choi, Chi Young; Roh, Yonghan

    2013-02-01

    New isolation scheme for CMOS image sensor pixel is proposed and its improved dark current performance is reported. It is well known that shallow trench isolation (STI) is one of major sources of dark current in imager pixel due to the existence of interfacial defects at STI/Si interface. On the account STI-free structure over the whole pixel area was previously reported for reducing dark current. As the size of pixel pitch is shrunk, however, it becomes increasingly difficult to isolate in-pixel transistors electrically without STI. In this work, we implemented hybrid type isolation scheme of removing STI around photodiode to suppress the dark current and remaining STI near transistors to guarantee the electrical isolation of transistors in pixel. It was successfully achieved that the dark current was significantly reduced by removing the STI around the photodiode together with normal operation of in-pixel transistors.

  10. Analysis of Error Sources in On-Wafer Noise Characterization of RF CMOS Transistors

    SciTech Connect

    Wiatr, Wojciech

    2005-08-25

    This paper analyzes how erroneous source impedance measurement due to residual errors within a VNA affect the four-noise parameter determination based on the cold-source noise measurement procedure and the eight-term linear model. It shows that although the errors disturb the complex noise characterization of a CMOS transistor at RF, mismatch and finite bandwidth errors seem to be more significant.

  11. High-power CMOS current driver with accurate transconductance for electrical impedance tomography.

    PubMed

    Constantinou, Loucas; Triantis, Iasonas F; Bayford, Richard; Demosthenous, Andreas

    2014-08-01

    Current drivers are fundamental circuits in bioimpedance measurements including electrical impedance tomography (EIT). In the case of EIT, the current driver is required to have a large output impedance to guarantee high current accuracy over a wide range of load impedance values. This paper presents an integrated current driver which meets these requirements and is capable of delivering large sinusoidal currents to the load. The current driver employs a differential architecture and negative feedback, the latter allowing the output current to be accurately set by the ratio of the input voltage to a resistor value. The circuit was fabricated in a 0.6- μm high-voltage CMOS process technology and its core occupies a silicon area of 0.64 mm (2) . It operates from a ± 9 V power supply and can deliver output currents up to 5 mA p-p. The accuracy of the maximum output current is within 0.41% up to 500 kHz, reducing to 0.47% at 1 MHz with a total harmonic distortion of 0.69%. The output impedance is 665 k Ω at 100 kHz and 372 k Ω at 500 kHz. PMID:25073130

  12. A uniform phase noise QVCO with a feedback current source

    NASA Astrophysics Data System (ADS)

    Chunyuan, Zhou; Lei, Zhang; He, Qian

    2012-07-01

    A novel integrated quadrature voltage controlled oscillator (QVCO) with a feedback current source is presented in this paper. Benefiting from the current adjusting function of the feedback current source, the proposed QVCO exhibits a uniform phase noise over the entire tuning range. This QVCO is implemented in 65-nm CMOS technology. The measurement results show that it draws less than 3-mA average current from a 1.2-V supply and the phase noise is less than -110 dBc/Hz @1MHz offset over the entire tuning range. The fluctuation of phase noise @1MHz offset from the center frequency of 2.84-GHz to 3.27-GHz is less than 1 dBc/Hz, which validates the correctness of the proposed current source feedback technique.

  13. Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems

    DOEpatents

    Welch, James D.

    2003-09-23

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of applied gate voltage field induced carriers in essentially intrinsic, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at substantially equal doping levels, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at different doping levels, and containing a single metallurgical doping type, and functional combinations thereof. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents utilizing material(s) which form rectifying junctions with both N and P-type semiconductor whether metallurigically or field induced.

  14. Investigations on CMOS photodiodes using scanning electron microscopy with electron beam induced current measurements

    NASA Astrophysics Data System (ADS)

    Kraxner, A.; Roger, F.; Loeffler, B.; Faccinelli, M.; Kirnstoetter, S.; Minixhofer, R.; Hadley, P.

    2014-09-01

    In this work the characterization of CMOS diodes with Electron Beam Induced Current (EBIC) measurements in a Scanning Electron Microscope (SEM) are presented. Three-dimensional Technology Computer Aided Design (TCAD) simulations of the EBIC measurement were performed for the first time to help interpret the experimental results. The TCAD simulations provide direct access to the spatial distribution of physical quantities (like mobility, lifetime etc.) which are very difficult to obtain experimentally. For the calibration of the simulation to the experiments, special designs of vertical p-n diodes were fabricated. These structures were investigated with respect to doping concentration, beam energy, and biasing. A strong influence of the surface preparation on the measurements and the extracted diffusion lengths are shown.

  15. Self-amplified CMOS image sensor using a current-mode readout circuit

    NASA Astrophysics Data System (ADS)

    Santos, Patrick M.; de Lima Monteiro, Davies W.; Pittet, Patrick

    2014-05-01

    The feature size of the CMOS processes decreased during the past few years and problems such as reduced dynamic range have become more significant in voltage-mode pixels, even though the integration of more functionality inside the pixel has become easier. This work makes a contribution on both sides: the possibility of a high signal excursion range using current-mode circuits together with functionality addition by making signal amplification inside the pixel. The classic 3T pixel architecture was rebuild with small modifications to integrate a transconductance amplifier providing a current as an output. The matrix with these new pixels will operate as a whole large transistor outsourcing an amplified current that will be used for signal processing. This current is controlled by the intensity of the light received by the matrix, modulated pixel by pixel. The output current can be controlled by the biasing circuits to achieve a very large range of output signal levels. It can also be controlled with the matrix size and this permits a very high degree of freedom on the signal level, observing the current densities inside the integrated circuit. In addition, the matrix can operate at very small integration times. Its applications would be those in which fast imaging processing, high signal amplification are required and low resolution is not a major problem, such as UV image sensors. Simulation results will be presented to support: operation, control, design, signal excursion levels and linearity for a matrix of pixels that was conceived using this new concept of sensor.

  16. A high linearity current mode second IF CMOS mixer for a DRM/DAB receiver

    NASA Astrophysics Data System (ADS)

    Jian, Xu; Zheng, Zhou; Yiqiang, Wu; Zhigong, Wang; Jianping, Chen

    2015-05-01

    A passive current switch mixer was designed for the second IF down-conversion in a DRM/DAB receiver. The circuit consists of an input transconductance stage, a passive current switching stage, and a current amplifier stage. The input transconductance stage employs a self-biasing current reusing technique, with a resistor shunt feedback to increase the gain and output impedance. A dynamic bias technique is used in the switching stage to ensure the stability of the overdrive voltage versus the PVT variations. A current shunt feedback is introduced to the conventional low-voltage second-generation fully balanced multi-output current converter (FBMOCCII), which provides very low input impedance and high output impedance. With the circuit working in current mode, the linearity is effectively improved with low supply voltages. Especially, the transimpedance stage can be removed, which simplifies the design considerably. The design is verified with a SMIC 0.18 μm RF CMOS process. The measurement results show that the voltage conversation gain is 1.407 dB, the NF is 16.22 dB, and the IIP3 is 4.5 dBm, respectively. The current consumption is 9.30 mA with a supply voltage of 1.8 V. This exhibits a good compromise among the gain, noise, and linearity for the second IF mixer in DRM/DAB receivers. Project supported by the National Natural Science Foundation of China (No. 61306069), and the National High Technology Research and Development Program of China (No. 2011AA010301).

  17. Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation.

    PubMed

    Tan, Gim Heng; Sidek, Roslina Mohd; Ramiah, Harikrishnan; Chong, Wei Keat; Lioe, De Xing

    2014-01-01

    This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm(2). PMID:25197694

  18. Iterative current mode per pixel ADC for 3D SoftChip implementation in CMOS

    NASA Astrophysics Data System (ADS)

    Lachowicz, Stefan W.; Rassau, Alexander; Lee, Seung-Minh; Eshraghian, Kamran; Lee, Mike M.

    2003-04-01

    Mobile multimedia communication has rapidly become a significant area of research and development constantly challenging boundaries on a variety of technological fronts. The processing requirements for the capture, conversion, compression, decompression, enhancement, display, etc. of increasingly higher quality multimedia content places heavy demands even on current ULSI (ultra large scale integration) systems, particularly for mobile applications where area and power are primary considerations. The ADC presented in this paper is designed for a vertically integrated (3D) system comprising two distinct layers bonded together using Indium bump technology. The top layer is a CMOS imaging array containing analogue-to-digital converters, and a buffer memory. The bottom layer takes the form of a configurable array processor (CAP), a highly parallel array of soft programmable processors capable of carrying out complex processing tasks directly on data stored in the top plane. This paper presents a ADC scheme for the image capture plane. The analogue photocurrent or sampled voltage is transferred to the ADC via a column or a column/row bus. In the proposed system, an array of analogue-to-digital converters is distributed, so that a one-bit cell is associated with one sensor. The analogue-to-digital converters are algorithmic current-mode converters. Eight such cells are cascaded to form an 8-bit converter. Additionally, each photo-sensor is equipped with a current memory cell, and multiple conversions are performed with scaled values of the photocurrent for colour processing.

  19. Progress in voltage and current mode on-chip analog-to-digital converters for CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Panicacci, Roger; Pain, Bedabrata; Zhou, Zhimin; Nakamura, Junichi; Fossum, Eric R.

    1996-03-01

    Two 8 bit successive approximation analog-to-digital converter (ADC) designs and a 12 bit current mode incremental sigma delta ((Sigma) -(Delta) ) ADC have been designed, fabricated, and tested. The successive approximation test chip designs are compatible with active pixel sensor (APS) column parallel architectures with a 20.4 micrometers pitch in a 1.2 micrometers n-well CMOS process and a 40 micrometers pitch in a 2 micrometers n-well CMOS process. The successive approximation designs consume as little as 49 (mu) W at a 500 KHz conversion rate meeting the low power requirements inherent in column parallel architectures. The current mode incremental (Sigma) -(Delta) ADC test chip is designed to be multiplexed among 8 columns in a semi-column parallel current mode APS architecture. The higher accuracy ADC consumes 800 (mu) W at a 5 KHz conversion rate.

  20. A BiCMOS time interval digitizer based on fully-differential, current-steering circuits

    SciTech Connect

    Loinaz, M.J.; Wooley, B.A. . Center for Integrated Systems)

    1994-06-01

    A time interval digitizer cell with a 0--16 ns input range and a nominal LSB width of 1.0 ns has been integrated in a 2-[mu]m BiCMOS technology. The circuit exhibits both integral and differential nonlinearity below 0.15 LSB and a timing error of 0.32 ns RMS. Logic gate propagation delays are used as time measurement units, and the nominal value of the delays is set by an on-chip phase-locked loop (PLL). Fully-differential, current-steering circuits with low voltage swings are used to implement the time interval digitizer so as to generate minimal switching noise. The cell is to be used in the monolithic, multi-channel realization of a high-sensitivity, mixed-signal data acquisition front-end. By virtue of the time digitization architecture used, the average power dissipation of the cell is only 19.8 mW, despite the use of circuits that dissipate static power, and the layout area is a compact 448 [mu]m x 634 [mu]m.

  1. Low power fast settling multi-standard current reusing CMOS fractional-N frequency synthesizer

    NASA Astrophysics Data System (ADS)

    Wenfeng, Lou; Peng, Feng; Haiyong, Wang; Nanjian, Wu

    2012-04-01

    A low power fast settling multi-standard CMOS fractional-N frequency synthesizer is proposed. The current reusing and frequency presetting techniques are adopted to realize the low power fast settling multi-standard fractional-N frequency synthesizer. An auxiliary non-volatile memory (NVM) is embedded to avoid the repetitive calibration process and to save power in practical application. This PLL is implemented in a 0.18 μm technology. The frequency range is 0.3 to 2.54 GHz and the settling time is less than 5 μs over the entire frequency range. The LC-VCO with the stacked divide-by-2 has a good figure of merit of -193.5 dBc/Hz. The measured phase noise of frequency synthesizer is about -115 dBc/Hz at 1 MHz offset when the carrier frequency is 2.4 GHz and the reference spurs are less than -52 dBc. The whole frequency synthesizer consumes only 4.35 mA @ 1.8 V.

  2. Robust design of a 500-MS/s 10-bit triple-channel current-steering DAC in 40 nm CMOS

    NASA Astrophysics Data System (ADS)

    Long, Cheng; Yu, Zhu; Kai, Zhu; Chixiao, Chen; Junyan, Ren

    2013-10-01

    A 500-MS/s 10-bit triple-channel current-steering DAC in 40 nm 1P8M CMOS advanced technology is proposed. The central symmetry random walk scheme is applied for current source arrays to avoid mismatching effects in nano-CMOS design. The high-speed latch drivers can be self-adaptively connected to switches in different voltage domains. The experimental data shows that the maximum DNL and INL are 0.42 LSB and 0.58 LSB. The measured SFDR at 1.7 MHz output signal is 58.91 dB, 58.53 dB and 56.98 dB for R/G/B channels, respectively. The DAC has good static and dynamic performance despite the single-ended output. The average rising time and falling time of three channels are 0.674 ns and 0.807 ns. The analog/digital power supply is 3.3 V/1.1 V. This triple-channel DAC occupies 0.5656 mm2.

  3. Integrated on-chip 0.35 μm BiCMOS current-mode DC-DC buck converter

    NASA Astrophysics Data System (ADS)

    Lee, Chan-Soo; Kim, Nam-Soo; Gendensuren, Munkhsuld; Choi, Jae-Ho; Choi, Joong-Ho

    2012-12-01

    A current-mode DC-DC buck converter with a fully integrated power module is presented in this article. The converter is implemented using BiCMOS technology in amplifier and power MOSFET in a current sensor. The current sensor is realised by the power lateral double-diffused MOSFET with the aspect ratio much larger than that of a matched p-MOSFET. In addition, BiCMOS technology is applied in the error amplifier for an accurate current sensing and a fast transient response. The DC-DC converter is fabricated with 0.35 µm BiCMOS process. Experimental results show that the fully integrated converter operates at 1.3 MHz switching frequency with a supply voltage of 5 V. The output DC voltage is obtained as expected and the output ripple is controlled to be within 2% with a 30 µH off-chip inductor and 100 µF off-chip capacitor.

  4. Regenerative switching CMOS system

    DOEpatents

    Welch, J.D.

    1998-06-02

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

  5. Regenerative switching CMOS system

    DOEpatents

    Welch, James D.

    1998-01-01

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

  6. A CMOS power-efficient low-noise current-mode front-end amplifier for neural signal recording.

    PubMed

    Wu, Chung-Yu; Chen, Wei-Ming; Kuo, Liang-Ting

    2013-04-01

    In this paper, a new current-mode front-end amplifier (CMFEA) for neural signal recording systems is proposed. In the proposed CMFEA, a current-mode preamplifier with an active feedback loop operated at very low frequency is designed as the first gain stage to bypass any dc offset current generated by the electrode-tissue interface and to achieve a low high-pass cutoff frequency below 0.5 Hz. No reset signal or ultra-large pseudo resistor is required. The current-mode preamplifier has low dc operation current to enhance low-noise performance and decrease power consumption. A programmable current gain stage is adopted to provide adjustable gain for adaptive signal scaling. A following current-mode filter is designed to adjust the low-pass cutoff frequency for different neural signals. The proposed CMFEA is designed and fabricated in 0.18-μm CMOS technology and the area of the core circuit is 0.076 mm(2). The measured high-pass cutoff frequency is as low as 0.3 Hz and the low-pass cutoff frequency is adjustable from 1 kHz to 10 kHz. The measured maximum current gain is 55.9 dB. The measured input-referred current noise density is 153 fA /√Hz , and the power consumption is 13 μW at 1-V power supply. The fabricated CMFEA has been successfully applied to the animal test for recording the seizure ECoG of Long-Evan rats. PMID:23853293

  7. Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors.

    PubMed

    Belloir, Jean-Marc; Goiffon, Vincent; Virmontois, Cédric; Raine, Mélanie; Paillet, Philippe; Duhamel, Olivier; Gaillardin, Marc; Molina, Romain; Magnan, Pierre; Gilard, Olivier

    2016-02-22

    The dark current produced by neutron irradiation in CMOS Image Sensors (CIS) is investigated. Several CIS with different photodiode types and pixel pitches are irradiated with various neutron energies and fluences to study the influence of each of these optical detector and irradiation parameters on the dark current distribution. An empirical model is tested on the experimental data and validated on all the irradiated optical imagers. This model is able to describe all the presented dark current distributions with no parameter variation for neutron energies of 14 MeV or higher, regardless of the optical detector and irradiation characteristics. For energies below 1 MeV, it is shown that a single parameter has to be adjusted because of the lower mean damage energy per nuclear interaction. This model and these conclusions can be transposed to any silicon based solid-state optical imagers such as CIS or Charged Coupled Devices (CCD). This work can also be used when designing an optical imager instrument, to anticipate the dark current increase or to choose a mitigation technique. PMID:26907077

  8. Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm bulk CMOS technology

    NASA Astrophysics Data System (ADS)

    Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, Hisaya

    2010-10-01

    Design issues associated with integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm bulk CMOS process are examined and the effects of fabrication parameters on transistor performance analyzed. HCBT is fabricated on a sidewall of a silicon hill defined by shallow trench isolation (STI). Height of the transistor is limited by the STI depth of 350 nm. Impact of vertical and horizontal dimensions on electrical performance of the transistor are analyzed by simulations with emphasis on extrinsic base design. Base current is reduced by high extrinsic base concentration and increased link-base length. Current gain is increased from 16 to 67 for transistor processed with the optimized extrinsic base profile. High-frequency performance is degraded by the collector charge sharing effect and can be improved by the larger separation between the extrinsic base and emitter, which is achieved with a small thickness of emitter polysilicon region. Misalignment tolerances of the extrinsic base implantation mask show no great impact on transistor's AC performance.

  9. A current mode feed-forward gain control system for a 0.8 V CMOS hearing aid

    NASA Astrophysics Data System (ADS)

    Fanyang, Li; Haigang, Yang; Fei, Liu; Tao, Yin

    2011-06-01

    A current mode feed-forward gain control (CMFGC) technique is presented, which is applied in the front-end system of a hearing aid chip. Compared with conventional automatic gain control (AGC), CMFGC significantly improves the total harmonic distortion (THD) by digital gain control. To attain the digital gain control codes according to the extremely weak output signal from the microphone, a rectifier and a state controller implemented in current mode are proposed. A prototype chip has been designed based on a 0.13 μm standard CMOS process. The measurement results show that the supply voltage can be as low as 0.6 V. And with the 0.8 V supply voltage, the THD is improved and below 0.06% (-64 dB) at the output level of 500 mVp-p, yet the power consumption is limited to 40 μW. In addition, the input referred noise is only 4 μVrms and the maximum gain is maintained at 33 dB.

  10. Effects of shallow trench isolation on low frequency noise characteristics of source-follower transistors in CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Kwon, Sung-Kyu; Kwon, Hyuk-Min; Choi, Woon-Il; Song, Hyeong-Sub; Lee, Hi-Deok

    2016-05-01

    The effects of the shallow trench isolation (STI) edge on low frequency noise characteristics of source-follower (SF) transistors in CMOS image sensors (CIS) were investigated. Random telegraph signal (RTS) noise and 1/f noise were measured in a CIS operating voltage region for a realistic assessment. SF transistor with STI edge in contact with channel shows a lower probability of generating RTS noise but greater RTS amplitude due to the enhanced trap density induced by STI-induced damage. SF MOSFETs without STI exhibit a much lower 1/f noise power spectral density in spite of the greater RTS generation probability, which is due to the decreased trap density. Therefore, SF transistors without STI edge in contact with channel are promising candidates for low noise CIS applications.

  11. A low-power current self-adjusted VCO using a bottom PMOS current source

    NASA Astrophysics Data System (ADS)

    Zhixiong, Sheng; Fengqi, Yu

    2014-09-01

    This paper presents the design and implementation of a current self-adjusted VCO with low power consumption. In the proposed VCO, a bottom PMOS current source instead of a top one is adopted to decrease the tail noise. A current self-adjusted technique without additional external control signals is taken to ensure the VCO starts up in the whole band while keeping the power consumption relatively low. Meanwhile, the phase noise of the VCO at the low frequency (high Cvar) can be reduced by the technique. The circuit is implemented in 0.18 μm CMOS technology. The proposed VCO exhibits low power consumption of < 1.6 mW at a 1.5 V supply voltage and a tuning range from 11.79 to 12.53 GHz. The measured phase noise at 1 MHz offset from the frequency 11.79 GHz is -104.7 dBc/Hz, and the corresponding FOM is -184.2 dBc/Hz.

  12. Beam current controller for laser ion source

    SciTech Connect

    Okamura, Masahiro

    2014-10-28

    The present invention relates to the design and use of an ion source with a rapid beam current controller for experimental and medicinal purposes. More particularly, the present invention relates to the design and use of a laser ion source with a magnetic field applied to confine a plasma flux caused by laser ablation.

  13. Centroid Position as a Function of Total Counts in a Windowed CMOS Image of a Point Source

    SciTech Connect

    Wurtz, R E; Olivier, S; Riot, V; Hanold, B J; Figer, D F

    2010-05-27

    We obtained 960,200 22-by-22-pixel windowed images of a pinhole spot using the Teledyne H2RG CMOS detector with un-cooled SIDECAR readout. We performed an analysis to determine the precision we might expect in the position error signals to a telescope's guider system. We find that, under non-optimized operating conditions, the error in the computed centroid is strongly dependent on the total counts in the point image only below a certain threshold, approximately 50,000 photo-electrons. The LSST guider camera specification currently requires a 0.04 arcsecond error at 10 Hertz. Given the performance measured here, this specification can be delivered with a single star at 14th to 18th magnitude, depending on the passband.

  14. A 0.7 V, 40 nW Compact, Current-Mode Neural Spike Detector in 65 nm CMOS.

    PubMed

    Yao, Enyi; Chen, Yi; Basu, Arindam

    2016-04-01

    In this paper, we describe a novel low power, compact, current-mode spike detector circuit for real-time neural recording systems where neural spikes or action potentials (AP) are of interest. Such a circuit can enable massive compression of data facilitating wireless transmission. This design can generate a high signal-to-noise ratio (SNR) output by approximating the popularly used nonlinear energy operator (NEO) through standard analog blocks. We show that a low pass filter after the NEO can be used for two functions-(i) estimate and cancel low frequency interference and (ii) estimate threshold for spike detection. The circuit is implemented in a 65 nm CMOS process and occupies 200 μm × 150 μ m of chip area. Operating from a 0.7 V power supply, it consumes about 30 nW of static power and 7 nW of dynamic power for 100 Hz input spike rate making it the lowest power consuming spike detector reported so far. PMID:26168445

  15. A constant current source for extracellular microiontophoresis.

    PubMed

    Walker, T; Dillman, N; Weiss, M L

    1995-12-01

    A sophisticated constant-current source suitable for extracellular microiontophoresis of tract-tracing substances, such as Phaseolus vulgaris leucoagglutinin, Biocytin or Fluoro-Gold, is described. This design uses a flyback switched-mode power supply to generate controllable high-voltage and operational amplifier circuitry to regulate current and provide instrumentation. Design features include a fast rise time, +/- 2000 V supply (stable output in < 250 ms), simultaneous load current and voltage monitoring, and separate pumping and holding current settings. Three features of this constant-current source make it especially useful for extracellular microiontophoresis. First, the output voltage monitor permits one to follow changes in the microelectrode resistance during current injection. Second, the voltage-limit (or out-of-compliance) indicator circuitry will sound an alarm when the iontophoretic pump is unable to generate the desired current, such as when the micropipette is blocked. Third, the high-compliance voltage power supply insures up to +/- 20 microA of current through 100 M omega resistance. This device has proven itself to be a reliable constant-current source for extracellular microiontophoresis in the laboratory. PMID:8788057

  16. Equivalent source current formulation in impedance tomography

    NASA Astrophysics Data System (ADS)

    Ilmoniemi, Risto J.; Ahlfors, Seppo P.

    1994-04-01

    Changes in the conductivity distribution of a body modify the electromagnetic field due to injected current in the same way as an equivalent source current distribution J(sup eq)(r) does. In the limit of small perturbations, it is shown that J(sup eq)(r) = Sigma(sup 1)(r)E(sup 0)(r), where Sigma(sup 1)(r) is a deviation in the conductivity and E(sup 0)(r) is the non-perturbed electric field. A model experiment demonstrates how a conductivity anomaly can be located using the minimum-norm estimate of the equivalent currents. The minimum-norm solution for small perturbation Sigma(sup 1)(r) is derived as well. The equivalent-source formulation allows the direct application of biomagnetic and bioelectric source-determination methods to conductivity imaging.

  17. A compact rail-to-rail CMOS buffer amplifier with very low quiescent current

    NASA Astrophysics Data System (ADS)

    Arslan, Emre; Yıldız, Merih; Minaei, Shahram

    2015-06-01

    In this work, a very compact, rail-to-rail, high-speed buffer amplifier for liquid crystal display (LCD) applications is proposed. Compared to other buffer amplifiers, the proposed circuit has a very simple architecture, occupies a small number of transistors and also has a large driving capacity with very low quiescent current. It is composed of two complementary differential input stages to provide rail-to-rail driving capacity. The push-pull transistors are directly connected to the differential input stage, and the output is taken from an inverter. The proposed buffer circuit is laid out using Mentor Graphics IC Station layout editor using AMS 0.35 μm process parameters. It is shown by post-layout simulations that the proposed buffer can drive a 1 nF capacitive load within a small settling time under a full voltage swing, while drawing only 1.6 μA quiescent current from a 3.3 V power supply.

  18. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  19. Quantum efficiency and dark current evaluation of a backside illuminated CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Vereecke, Bart; Cavaco, Celso; De Munck, Koen; Haspeslagh, Luc; Minoglou, Kyriaki; Moore, George; Sabuncuoglu, Deniz; Tack, Klaas; Wu, Bob; Osman, Haris

    2015-04-01

    We report on the development and characterization of monolithic backside illuminated (BSI) imagers at imec. Different surface passivation, anti-reflective coatings (ARCs), and anneal conditions were implemented and their effect on dark current (DC) and quantum efficiency (QE) are analyzed. Two different single layer ARC materials were developed for visible light and near UV applications, respectively. QE above 75% over the entire visible spectrum range from 400 to 700 nm is measured. In the spectral range from 260 to 400 nm wavelength, QE values above 50% over the entire range are achieved. A new technique, high pressure hydrogen anneal at 20 atm, was applied on photodiodes and improvement in DC of 30% for the BSI imager with HfO2 as ARC as well as for the front side imager was observed. The entire BSI process was developed 200 mm wafers and evaluated on test diode structures. The knowhow is then transferred to real imager sensors arrays.

  20. A programmable low power current source for bioimpedance measurement: Towards a wearable personalized health assistant.

    PubMed

    Hamed, Zaid; Tenhunen, Hannu; Yang, Geng

    2015-08-01

    Bioimpedance is a noninvasive measurement method that facilitates body composition analysis, besides being indicative of many other health parameters. In this work a novel programmable, low complexity, high output impedance, high voltage compliance and wideband current source for bioimpedance applications is presented. Previously, we designed, fabricated and tested in vivo a bio-patch for acquisition of multiple bio-signals. Upon integration with our previous work, this circuit is envisioned to constitute part of a personalized health assistant. Simulation at worst case corners and real operation conditions was carried out using UMC-180 nm 1 poly 6 metal CMOS process. Full duty cycle, shortened or stepped square waves can be generated. Amplitude control of 8 different current levels is supported. Frequency can be tuned up to 1 MHz and an output impedance of 2.8 MO @ 250 KHz is achieved at full current capacity. Total current consumption is comparable to the injected current, making the circuit highly efficient. PMID:26736687

  1. Dc characterization of lateral bipolar devices in standard CMOS technology: a new model for base current partitioning

    NASA Astrophysics Data System (ADS)

    Corsi, F.; Di Ciano, M.; Marzocca, C.

    1999-05-01

    As is generally known, compared with MOSFETs bipolar transistors provide better performance in terms of small signal transconductance, intrinsic cut-off frequency and noise characteristics, at the cost of a more expensive technology. A good compromise between the low costs proper of standard CMOS technology and the excellent performance typical of bipolar devices can be achieved by using bipolar transistors derived from MOS structures. Naturally suitable models combined with efficient parameter extraction techniques are mandatory to provide designers with reliable simulation tools. A dc parameter extraction procedure for a PNP lateral transistor realized in a standard CMOS technology based on an existing composite circuit model is presented here. The extraction results provide accurate fitting between measured and simulated data for different operating regions without resort to numerical optimization, thus preserving the physical meaning of the extracted parameters and retaining a good correlation with process variations.

  2. A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter.

    PubMed

    Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

    2016-01-01

    This paper presents the first low noise complementary metal oxide semiconductor (CMOS) deletedCMOS terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31 × 31 focal plane array has been fully integrated in a 0 . 13 μ m standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0 . 2 μ V RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0 . 6 nW at 270 GHz and 0 . 8 nW at 600 GHz. PMID:26950131

  3. Light-controlled biphasic current stimulator IC using CMOS image sensors for high-resolution retinal prosthesis and in vitro experimental results with rd1 mouse.

    PubMed

    Oh, Sungjin; Ahn, Jae-Hyun; Lee, Sangmin; Ko, Hyoungho; Seo, Jong Mo; Goo, Yong-Sook; Cho, Dong-il Dan

    2015-01-01

    Retinal prosthetic devices stimulate retinal nerve cells with electrical signals proportional to the incident light intensities. For a high-resolution retinal prosthesis, it is necessary to reduce the size of the stimulator pixels as much as possible, because the retinal nerve cells are concentrated in a small area of approximately 5 mm × 5 mm. In this paper, a miniaturized biphasic current stimulator integrated circuit is developed for subretinal stimulation and tested in vitro. The stimulator pixel is miniaturized by using a complementary metal-oxide-semiconductor (CMOS) image sensor composed of three transistors. Compared to a pixel that uses a four-transistor CMOS image sensor, this new design reduces the pixel size by 8.3%. The pixel size is further reduced by simplifying the stimulation-current generating circuit, which provides a 43.9% size reduction when compared to the design reported to be the most advanced version to date for subretinal stimulation. The proposed design is fabricated using a 0.35 μm bipolar-CMOS-DMOS process. Each pixel is designed to fit in a 50 μ m × 55 μm area, which theoretically allows implementing more than 5000 pixels in the 5 mm × 5 mm area. Experimental results show that a biphasic current in the range of 0 to 300 μA at 12 V can be generated as a function of incident light intensities. Results from in vitro experiments with rd1 mice indicate that the proposed method can be effectively used for retinal prosthesis with a high resolution. PMID:25020014

  4. HIGH CURRENT RADIO FREQUENCY ION SOURCE

    DOEpatents

    Abdelaziz, M.E.

    1963-04-01

    This patent relates to a high current radio frequency ion source. A cylindrical plasma container has a coil disposed around the exterior surface thereof along the longitudinal axis. Means are provided for the injection of an unionized gas into the container and for applying a radio frequency signal to the coil whereby a radio frequency field is generated within the container parallel to the longitudinal axis thereof to ionize the injected gas. Cathode and anode means are provided for extracting transverse to the radio frequency field from an area midway between the ends of the container along the longitudinal axis thereof the ions created by said radio frequency field. (AEC)

  5. SPALLATION NEUTRON SOURCE BEAM CURRENT MONITOR ELECTRONICS.

    SciTech Connect

    KESSELMAN,M.; DAWSON,W.C.

    2002-05-06

    This paper will discuss the present electronics design for the beam current monitor system to be used throughout the Spallation Neutron Source (SNS) under construction at Oak Ridge National Laboratory. The beam is composed of a micro-pulse structure due to the 402.5MHz RF, and is chopped into mini-pulses of 645ns duration with a 300ns gap, providing a macro-pulse of 1060 mini-pulses repeating at a 60Hz rate. Ring beam current will vary from about 15ma peak during studies, to about 50Amps peak (design to 100 amps). A digital approach to droop compensation has been implemented and initial test results presented.

  6. A high performance current source inverter

    SciTech Connect

    Joos, G.; Moschopoulos, G.; Ziogas, P.D.

    1993-10-01

    A recent innovation in current source inverter (CSI) drives has been the introduction of pulsewidth modulation (PWM) for the purpose of improving the quality of the load currents and voltages. However, the typical six switch CSI circuit is not compatible with all standard PWM techniques thus limiting the number of schemes that can be used. The modified CSI circuit discussed in this paper removes most of the restrictions at the ``cost`` of an extra switch. Additional advantages include faster response times through modulation index control and higher efficiency. This paper includes a detailed steady-state analysis and design procedure. The feasibility and performance of the modified CSI are verified by simulation and experimental implementation on a 5 kVA converter.

  7. Noise in a CMOS digital pixel sensor

    NASA Astrophysics Data System (ADS)

    Chi, Zhang; Suying, Yao; Jiangtao, Xu

    2011-11-01

    Based on the study of noise performance in CMOS digital pixel sensor (DPS), a mathematical model of noise is established with the pulse-width-modulation (PWM) principle. Compared with traditional CMOS image sensors, the integration time is different and A/D conversion is implemented in each PWM DPS pixel. Then, the quantitative calculating formula of system noise is derived. It is found that dark current shot noise is the dominant noise source in low light region while photodiode shot noise becomes significantly important in the bright region. In this model, photodiode shot noise does not vary with luminance, but dark current shot noise does. According to increasing photodiode capacitance and the comparator's reference voltage or optimizing the mismatch in the comparator, the total noise can be reduced. These results serve as a guideline for the design of PWM DPS.

  8. Extracted current saturation in negative ion sources

    SciTech Connect

    Mochalskyy, S.; Lifschitz, A. F.; Minea, T.

    2012-06-01

    The extraction of negatively charged particles from a negative ion source is one of the crucial issues in the development of the neutral beam injector system for future experimental reactor ITER. Full 3D electrostatic particle-in-cell Monte Carlo collision code - ONIX [S. Mochalskyy et al., Nucl. Fusion 50, 105011 (2010)] - is used to simulate the hydrogen plasma behaviour and the extracted particle features in the vicinity of the plasma grid, both sides of the aperture. It is found that the contribution to the extracted negative ion current of ions born in the volume is small compared with that of ions created at the plasma grid walls. The parametric study with respect to the rate of negative ions released from the walls shows an optimum rate. Beyond this optimum, a double layer builds-up by the negative ion charge density close to the grid aperture surface reducing thus extraction probability, and therefore the extracted current. The effect of the extraction potential and magnetic field magnitudes on the extraction is also discussed. Results are in good agreement with available experimental data.

  9. Resistor Extends Life Of Battery In Clocked CMOS Circuit

    NASA Technical Reports Server (NTRS)

    Wells, George H., Jr.

    1991-01-01

    Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

  10. On noise in time-delay integration CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Levski, Deyan; Choubey, Bhaskar

    2016-05-01

    Time delay integration sensors are of increasing interest in CMOS processes owing to their low cost, power and ability to integrate with other circuit readout blocks. This paper presents an analysis of the noise contributors in current day CMOS Time-Delay-Integration image sensors with various readout architectures. An analysis of charge versus voltage domain readout modes is presented, followed by a noise classification of the existing Analog Accumulator Readout (AAR) and Digital Accumulator Readout (DAR) schemes for TDI imaging. The analysis and classification of existing readout schemes include, pipelined charge transfer, buffered direct injection, voltage as well as current-mode analog accumulators and all-digital accumulator techniques. Time-Delay-Integration imaging modes in CMOS processes typically use an N-number of readout steps, equivalent to the number of TDI pixel stages. In CMOS TDI sensors, where voltage domain readout is used, the requirements over speed and noise of the ADC readout chain are increased due to accumulation of the dominant voltage readout and ADC noise with every stage N. Until this day, the latter is the primary reason for a leap-back of CMOS TDI sensors as compared to their CCD counterparts. Moreover, most commercial CMOS TDI implementations are still based on a charge-domain readout, mimicking a CCD-like operation mode. Thus, having a good understanding of each noise contributor in the signal chain, as well as its magnitude in different readout architectures, is vital for the design of future generation low-noise CMOS TDI image sensors based on a voltage domain readout. This paper gives a quantitative classification of all major noise sources for all popular implementations in the literature.

  11. Ferroelectric, stacked gate FETs: A prospective for planar CMOS with reduced leakage current and Sub-kT/q subthreshold swing

    NASA Astrophysics Data System (ADS)

    Kumar, Mirgender; Park, Si-Hyun

    2016-07-01

    The planar silicon-on-insulator (SOI) based metal-oxide semiconductor (MOS) structure has been at the center of attention of researchers who are attempting to extend its scalability. This study presents an analysis of ferroelectric MOS field effect transis-tors (Fe-MOSFETs) based on the surface potential, threshold voltage, subthreshold swing, leakage current, ON current and electron temperature. In addition, the electro-static integrity ( EI) factor and the threshold-voltage-to-swing ratio for Fe-MOSFETs were estimated and compared with those of conventional, high-k and double-gate (DG) MOSFETs. The analysis shows that the Fe-MOSFET is able to enhance the scalability and fulfil the expectation of researchers studying planar complementary MOS (CMOS) devices.

  12. A zero-voltage switching technique for minimizing the current-source power of implanted stimulators.

    PubMed

    Çilingiroğlu, Uğur; İpek, Sercan

    2013-08-01

    The current-source power of an implanted stimulator is reduced almost to the theoretical minimum by driving the electrodes directly from the secondary port of the inductive link with a dedicated zero-voltage switching power supply. A feedback loop confined to the secondary of the inductive link adjusts the timing and conduction angle of switching to provide just the right amount of supply voltage needed for keeping the current-source voltage constant at or slightly above the compliance limit. Since drive is based on current rather than voltage, and supply-voltage update is near real-time, the quality of the current pulses is high regardless of how the electrode impedance evolves during stimulation. By scaling the switching frequency according to power demand, the technique further improves overall power consumption of the stimulator. The technique is implemented with a very simple control circuitry comprising a comparator, a Schmitt trigger and a logic gate of seven devices in addition to an on-chip switch and an off-chip capacitor. The power consumed by the proposed supply circuit itself is no larger than what the linear regulator of a conventional supply typically consumes for the same stimulation current. Still, the sum of supply and current-source power is typically between 20% and 75% of the conventional source power alone. Functionality of the proposed driver is verified experimentally on a proof-of-concept prototype built with 3.3 V devices in a 0.18 μm CMOS technology. PMID:23893206

  13. Thimerosal: current sources of contact in Brazil.

    PubMed

    Rocha, Vanessa Barreto; Scherrer, Maria Antonieta Rios

    2014-01-01

    Thimerosal is an organic mercury derivative found in ophthalmic solutions and certain vaccines in Brazil. Although most studies suggest the prevalence of thimerosal sensitivity to be quite high, this condition does not currently have any clinical relevance. The present article surveyed 184 Brazilian products (151 topical medications and 33 vaccines) and found that thimerosal was only present in 3 ophthalmic solutions and 5 vaccines. PMID:24770530

  14. A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter

    PubMed Central

    Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

    2016-01-01

    This paper presents the first low noise complementary metal oxide semiconductor (CMOS) terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31×31 focal plane array has been fully integrated in a 0.13μm standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0.2μV RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0.6 nW at 270 GHz and 0.8 nW at 600 GHz. PMID:26950131

  15. High Current Ion Sources and Injectors for Heavy Ion Fusion

    SciTech Connect

    Kwan, Joe W.

    2005-02-15

    Heavy ion beam driven inertial fusion requires short ion beam pulses with high current and high brightness. Depending on the beam current and the number of beams in the driver system, the injector can use a large diameter surface ionization source or merge an array of small beamlets from a plasma source. In this paper, we review the scaling laws that govern the injector design and the various ion source options including the contact ionizer, the aluminosilicate source, the multicusp plasma source, and the MEVVA source.

  16. Analysis of noise characteristics for the active pixels in CMOS image sensors for X-ray imaging

    NASA Astrophysics Data System (ADS)

    Kim, Young Soo; Cho, Gyuseong; Bae, Jun-Hyung

    2006-09-01

    CMOS image sensors have poorer performance compared to conventional charge coupled devices (CCDs). Since CMOS Active Pixel Sensors (APSs) in general have higher temporal noise, higher dark current, smaller full well charge capacitance, and lower spectral response, they cannot provide the same wide dynamic range and superior signal to noise ratio as CCDs. In view of electronic noise, the main source for the CMOS APS is the pixel, along with other signal processing blocks such as row and column decoder, analog signal processor (ASP), analog-to-digital converter (ADC), and timing and control logic circuitry. Therefore, it is important and necessary to characterize noise of the active pixels in CMOS APSs, and we performed experimental measurements and comparisons with theoretical estimations. To derive noise source of the pixels, we designed and fabricated four types of CMOS active pixels, and each pixel is composed of a photodiode and three MOS transistors. The size of these pixels is 100 μm×100 μm. The test chip was fabricated using ETRI 0.8 μm (2P/2M) standard CMOS process. It was found that the dominant noise in CMOS active pixels is shot noise during integration under normal operating conditions. And, it was also seen that epitaxial type pixels have similar noise level compared to non-epitaxial type, and the noise of diffusion type pixel is larger than for a well type pixel on the same substrate type.

  17. The source of the Leeuwin Current seasonality

    NASA Astrophysics Data System (ADS)

    Ridgway, K. R.; Godfrey, J. S.

    2015-10-01

    The seasonal circulation around the southwestern boundary of Australia is documented using sea level anomalies from satellite altimetry. Results extrapolated to the coast agree closely with tide gauge observations indicating that seasonal altimeter fields are realistic. Monthly sea level maps identify an annual propagating wave along a waveguide extending along the shelf edge, from the Gulf of Carpentaria to southern Tasmania. The annual sea level pulse does not originate from the Pacific Ocean, as annual Pacific sea level variations are completely out of phase with signals south of the Indonesian archipelago. The presence of a phase discontinuity is demonstrated in annual sea level, temperature, and salinity observations. The origin of the Leeuwin Current seasonality is in the Gulf of Carpentaria where monsoonal winds drive a massive buildup of sea level from November to December. During December-February, a sea level "pulse" emerges from the region, and rapidly propagates poleward along the western and southern Australian boundary. In the broad shelf region centered at 19°S, an independent process forms a high sea level feature when a positive heat flux anomaly induces an annual increase in sea surface temperature which is rapidly mixed through the water column by the strong regional tides. In March, the winds relax and switch to a downwelling favorable alongshore component. In this period, the sea level pulse is essentially in a quasi-static equilibrium with the annual propagating wind systems. The change in cross-shelf sea level gradient along the 8000 km path length at the western and southern boundaries, drives the seasonal changes in the Leeuwin Current flow.

  18. SEMICONDUCTOR INTEGRATED CIRCUITS: A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems

    NASA Astrophysics Data System (ADS)

    Krit, Salahddine; Qjidaa, Hassan; El Affar, Imad; Khadija, Yafrah; Messghati, Ziani; El-Ghzizal, Yassir

    2010-04-01

    This paper presents a novel organization of switch capacitor charge pump circuits based on voltage doubler structures. Each voltage doubler takes a DC input and outputs a doubled DC voltage. By cascading voltage doublers the output voltage increases up to 2 times. A two-phase voltage doubler and a multiphase voltage doubler structures are discussed and design considerations are presented. A simulator working in the Q-V realm was used for simplified circuit level simulation. In order to evaluate the power delivered by a charge pump, a resistive load is attached to the output of the charge pump and an equivalent capacitance is evaluated. To avoid the short circuit during switching, a clock pair generator is used to achieve multi-phase non-overlapping clock pairs. This paper also identifies optimum loading conditions for different configurations of the charge pumps. The proposed charge-pump circuit is designed and simulated by SPICE with TSMC 0.35-μm CMOS technology and operates with a 2.7 to 3.6 V supply voltage. It has an area of 0.4 mm2; it was designed with a frequency regulation of 1 MHz and internal current mode to reduce power consumption.

  19. Current Source Converters in Discontinuous Conduction Modes of Operation

    NASA Astrophysics Data System (ADS)

    Cuzner, Robert M.

    This work demonstrates that Current Source Rectifier (CSR) pulse-width modulation (PWM) can be successfully modified for discontinuous conduction mode (DCM). DCM is characterized by input current distortion and non-linear input to output voltage ratio. A Dead-Beat Current Injection (DBCI) PWM method is developed that ensures sinusoidal input currents and linear input to output voltage control while in DCM. A method for control analysis is proposed that enables design of the CSR closed loop voltage controller. The proposed method is simulated to show that the desired objectives are achieved at no load and very light load, where the CSR operates in an extreme DCM condition. Experimental results verify performance of the DBCI-PWM method and validate both simulation and analytical tools used to explore the capabilities of the approach. Index Terms---Active buck rectifier, Current source rectifier (CSR), current source PWM rectifier, power conversion, power converter design, power converter analysis, input power quality

  20. Development of a low noise MREIT current source

    NASA Astrophysics Data System (ADS)

    Kim, Young Tae; Yoo, Pil Joong; In Oh, Tong; Woo, Eung Je

    2010-04-01

    In MREIT conductivity imaging experiments of animal and human subjects, we should minimize the noise level in measured magnetic flux density data induced by injection currents with low amplitude. Since noise and artifact from an MREIT current source directly affect the quality of the data, a low-noise current source is desirable. In order to be compatible with various MREIT pulse sequences, it should be also programmable. We have developed a new MREIT current source, which is controlled by a PC program for flexibility. We designed it in such a way that it is located inside the shield room of an MRI system. To minimize noise and artifact, we adopted an optical link for the connection to the PC outside the shield room. The enclosure of the new current source provides a magnetic as well as electric shielding to prevent high frequency switching noise of the current source from interfering with the scanner. It is powered by a rechargeable battery so that the entire current source is isolated from the ground. Equipped with automatic lead switching capability, it simplifies and automates MREIT imaging experiments. Our experimental results show that its performance is superior to the previous version, which is located outside the shield room.

  1. Multipulse current source offers low power losses and high reliability

    NASA Technical Reports Server (NTRS)

    1967-01-01

    Pulse current source uses low loss, high reliability, LC circuits to provide the necessary high impedance for magnetic memory cores, frequently used in digital computational equipment. Square-loop reactors replace the semiconductor switches previously used.

  2. High current vacuum arc ion source for heavy ion fusion

    SciTech Connect

    Qi, N.; Schein, J.; Gensler, S.; Prasad, R.R.; Krishnan, M.; Brown, I.

    1999-07-01

    Heavy Ion fusion (HIF) is one of the approaches for the controlled thermonuclear power production. A source of heavy ions with charge states 1+ to 2+, in {approximately}0.5 A current beams with {approximately}20 {micro}s pulse widths and {approximately}10 Hz repetition rates are required. Thermionic sources have been the workhorse for the HIF program to date, but suffer from sloe turn-on, heating problems for large areas, are limited to low (contact) ionization potential elements and offer relatively low ion fluxes with a charge state limited to 1+. Gas injection sources suffer from partial ionization and deleterious neutral gas effects. The above shortcomings of the thermionic ion sources can be overcome by a vacuum arc ion source. The vacuum arc ion source is a good candidate for HIF applications. It is capable of providing ions of various elements and different charge states, in short and long pulse bursts, with low emittance and high beam currents. Under a Phase-I STTR from DOE, the feasibility of the vacuum arc ion source for the HIF applications is investigated. An existing ion source at LBNL was modified to produce {approximately}0.5 A, {approximately}60 keV Gd (A{approximately}158) ion beams. The experimental effort concentrated on beam noise reduction, pulse-to-pulse reproducibility and achieving low beam emittance at 0.5 A ion current level. Details of the source development will be reported.

  3. VVCF Single-phase Current Source Converter using Single Bridge

    NASA Astrophysics Data System (ADS)

    Neba, Yasuhiko; Matsumoto, Hirokazu; Itoh, Ryozo; Ishizaka, Kouichi; Hashimoto, Koichiro; Kaji, Daiki

    A single-phase current source converter with variable voltage and constant frequency is presented. The converter is a single bridge circuit of two legs and has a smoothing reactor in the dc side. The power source and the load are connected in series and they are connected to the bridge legs. The normal PWM method with the sinusoidal modulating and the triangular carrier waves is employed for the converter. The experimental results confirm that the PWM converter has the sinusoidal voltage and current in both the source and the load.

  4. MEG-based imaging of focal neuronal current sources

    SciTech Connect

    Phillips, J.W.; Leahy, R.M.; Mosher, J.C.

    1996-07-01

    We describe a new approach to imaging neuronal current sources from measurements of the magnetoencephalogram (MEG) associated with sensory, motor, or cognitive brain activation. Previous approaches to this problem have concentrated on the use of weighted minimum norm inverse methods. While these methods ensure a unique solution, they do not introduce information specific to the MEG inverse problem, often producing overly smoothed solutions and exhibiting severe sensitivity to noise. We describe a Bayesian formulation of the inverse problem in which a Gibbs prior is constructed to reflect the sparse focal nature of neuronal current sources associated with evoked response data. The prior involves a binary process indicating active sources and a continuous Gaussian process designating associated amplitudes. An estimate of the primary current source distribution for a specific data set is formed by maximizing over the posterior probability with respect to the binary and continuous variables.

  5. An in vitro demonstration of CMOS-based optoelectronic neural interface device for optogenetics.

    PubMed

    Tokuda, T; Nakajima, S; Maezawa, Y; Noda, T; Sasagawa, K; Ishikawa, Y; Shiosaka, S; Ohta, J

    2013-01-01

    A CMOS-based neural interface device equipped with an integrated micro light source array for optogenetics was fabricated and demonstrated. A GaInN LED array formed on sapphire substrate was successfully assembled with a multifunctional CMOS image sensor that is capable of on-chip current injection. We demonstrated a functionality of light stimulation onto ChR2-expressed cells in an in vitro experiment. A ChR2-expressed cell were successfully stimulated with the light emitted from the fabricated device. PMID:24109808

  6. Development of a high current H(-) ion source for cyclotrons.

    PubMed

    Etoh, H; Aoki, Y; Mitsubori, H; Arakawa, Y; Mitsumoto, T; Yajima, S; Sakuraba, J; Kato, T; Okumura, Y

    2014-02-01

    A multi-cusp DC H(-) ion source has been designed and fabricated for medical applications of cyclotrons. Optimization of the ion source is in progress, such as the improvement of the filament configuration, magnetic filter strength, extraction electrode's shape, configuration of electron suppression magnets, and plasma electrode material. A small quantity of Cs has been introduced into the ion source to enhance the negative ion beam current. The ion source produced 16 mA of DC H(-) ion beam with the Cs-seeded operation at a low arc discharge power of 2.8 kW. PMID:24593547

  7. Study of Direct Current Negative Ion Source for Medicine Accelerator

    SciTech Connect

    Belchenko, Yu.; Ivanov, I.; Piunov, I.

    2005-04-06

    Status of dc H- ion source development for tandem accelerator of boron capture neutron therapy is described. Upgrade and study of the Penning surface-plasma source with hollow cathodes was continued. Results of source optimization, of ion optic computer simulation, and of emittance measurement are presented. The upgraded source delivers dc H- beam with energy 25 kV, current 8 mA, 1rms emittance JukcyX {approx} 0.2 {pi} mm{center_dot}mrad, JukcyY {approx} 0.3 {pi} mm{center_dot}mrad at discharge power {<=} 0.5 kW.

  8. Design of a 10-bit segmented current-steering digital-to-analog converter in CMOS 65 nm technology for the bias of new generation readout chips in high radiation environment

    NASA Astrophysics Data System (ADS)

    De Robertis, G.; Loddo, F.; Mattiazzo, S.; Pacher, L.; Pantano, D.; Tamma, C.

    2016-01-01

    A new pixel front end chip for HL-LHC experiments in CMOS 65nm technology is under development by the CERN RD53 collaboration together with the Chipix65 INFN project. This work describes the design of a 10-bit segmented current-steering Digital-to-Analog Converter (DAC) to provide a programmable bias current to the analog blocks of the circuit. The main requirements are monotonicity, good linearity, limited area consumption and radiation hardness up to 10 MGy. The DAC was prototyped and electrically tested, while irradiation tests will be performed in Autumn 2015.

  9. Effective shielding to measure beam current from an ion source

    SciTech Connect

    Bayle, H.; Delferrière, O.; Gobin, R.; Harrault, F.; Marroncle, J.; Senée, F.; Simon, C.; Tuske, O.

    2014-02-15

    To avoid saturation, beam current transformers must be shielded from solenoid, quad, and RFQ high stray fields. Good understanding of field distribution, shielding materials, and techniques is required. Space availability imposes compact shields along the beam pipe. This paper describes compact effective concatenated magnetic shields for IFMIF-EVEDA LIPAc LEBT and MEBT and for FAIR Proton Linac injector. They protect the ACCT Current Transformers beyond 37 mT radial external fields. Measurements made at Saclay on the SILHI source are presented.

  10. Fabrication of CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Malinovich, Yacov; Koltin, Ephie; Choen, David; Shkuri, Moshe; Ben-Simon, Meir

    1999-04-01

    In order to provide its customers with sub-micron CMOS fabrication solutions for imaging applications, Tower Semiconductor initiated a project to characterize the optical parameters of Tower's 0.5-micron process. A special characterization test chip was processed using the TS50 process. The results confirmed a high quality process for optical applications. Perhaps the most important result is the process' very low dark current, of 30-50 pA/cm2, using the entire window of process. This very low dark current characteristic was confirmed for a variety of pixel architectures. Additionally, we have succeeded to reduce and virtually eliminate the white spots on large sensor arrays. As a foundry Tower needs to support fabrication of many different imaging products. Therefore we have developed a fabrication methodology that is adjusted to the special needs of optical applications. In order to establish in-line process monitoring of the optical parameters, Tower places a scribe line optical test chip that enables wafer level measurements of the most important parameters, ensuring the optical quality and repeatability of the process. We have developed complementary capabilities like in house deposition of color filter and fabrication of very large are dice using sub-micron CMOS technologies. Shellcase and Tower are currently developing a new CMOS image sensor optical package.

  11. CAOS-CMOS camera.

    PubMed

    Riza, Nabeel A; La Torre, Juan Pablo; Amin, M Junaid

    2016-06-13

    Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical unit to realize a high dynamic range imager for extreme light contrast conditions. The experimentally demonstrated CAOS-CMOS camera is built using a digital micromirror device, a silicon point-photo-detector with a variable gain amplifier, and a silicon CMOS sensor with a maximum rated 51.3 dB dynamic range. White light imaging of three different brightness simultaneously viewed targets, that is not possible by the CMOS sensor, is achieved by the CAOS-CMOS camera demonstrating an 82.06 dB dynamic range. Applications for the camera include industrial machine vision, welding, laser analysis, automotive, night vision, surveillance and multispectral military systems. PMID:27410361

  12. Correct CMOS IC defect models for quality testing

    NASA Technical Reports Server (NTRS)

    Soden, Jerry M.; Hawkins, Charles F.

    1993-01-01

    Leading edge, high reliability, and low escape CMOS IC test practices have now virtually removed the stuck-at fault model and replaced it with more defect-orientated models. Quiescent power supply current testing (I(sub DDQ)) combined with strategic use of high speed test patterns is the recommended approach to zero defect and high reliability testing goals. This paper reviews the reasons for the change in CMOS IC test practices and outlines an improved CMOS IC test methodology.

  13. Behavior of faulty double BJT BiCMOS logic gates

    NASA Technical Reports Server (NTRS)

    Menon, Sankaran M.; Malaiya, Yashwant K.; Jayasumana, Anura P.

    1992-01-01

    Logic Behavior of a Double BJT BiCMOS device under transistor level shorts and opens is examined. In addition to delay faults, faults that cause the gate to exhibit sequential behavior were observed. Several faults can be detected only by monitoring the current. The faulty behavior of Bipolar (TTL) and CMOS logic families is compared with BiCMOS, to bring out the testability differences.

  14. Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

    NASA Astrophysics Data System (ADS)

    Wang, G. L.; Moeen, M.; Abedin, A.; Kolahdouz, M.; Luo, J.; Qin, C. L.; Zhu, H. L.; Yan, J.; Yin, H. Z.; Li, J. F.; Zhao, C.; Radamson, H. H.

    2013-09-01

    SiGe has been widely used for source/drain (S/D) engineering in pMOSFETs to enhance channel mobility. In this study, selective Si1-xGex growth (0.25 ≤ x ≤ 0.35) with boron concentration of 1-3 × 1020 cm-3 in the process for 22 nm node complementary metal-oxide semiconductor (CMOS) has been investigated and optimized. The growth parameters were carefully tuned to achieve deposition of high quality and highly strained material. The thermal budget was decreased to 800 °C to suppress dopant diffusion, to minimize Si loss in S/D recesses, and to preserve the S/D recess shape. Two layers of Si1-xGex were deposited: a bottom layer with high Ge content (x = 0.35) which filled the recess and a cap layer with low Ge content (x = 0.25) which was elevated in the S/D regions. The elevated SiGe cap layer was intended to be consumed during the Ni-silicidation process in order to avoid strain reduction in the channel region arising from strain relaxation in SiGe S/D. In this study, a kinetic gas model was also applied to predict the pattern dependency of the growth and to determine the epi-profile in different transistor arrays. The input parameters include growth temperature, partial pressures of reactant gases, and chip layout. By using this model, the number of test wafers for epitaxy experiments can be decreased significantly. When the epitaxy process parameters can be readily predicted by the model for epi-profile control in an advanced chip design, fast and cost-effective process development can be achieved.

  15. 15-nW Biopotential LPFs in 0.35- μm CMOS using subthreshold-source-follower Biquads with and without gain compensation.

    PubMed

    Zhang, Tan-Tan; Mak, Pui-In; Vai, Mang-I; Mak, Peng-Un; Law, Man-Kay; Pun, Sio-Hang; Wan, Feng; Martins, Rui P

    2013-10-01

    Most biopotential readout front-ends rely on the g m- C lowpass filter (LPF) for forefront signal conditioning. A small g m realizes a large time constant ( τ = C / g m) suitable for ultra-low-cutoff filtering, saving both power and area. Yet, the noise and linearity can be compromised, given that each g m cell can involve one or several noisy and nonlinear V- I conversions originated from the active devices. This paper proposes the subthreshold-source-follower (SSF) Biquad as a prospective alternative. It features: 1) a very small number of active devices reducing the noise and nonlinearity footsteps; 2) No explicit feedback in differential implementation, and 3) extension of filter order by cascading. This paper presents an in-depth treatment of SSF Biquad in the nW-power regime, analyzing its power and area tradeoffs with gain, linearity and noise. A gain-compensation (GC) scheme addressing the gain-loss problem of NMOS-based SSF Biquad due to the body effect is also proposed. Two 100-Hz 4th-order Butterworth LPFs using the SSF Biquads with and without GC were fabricated in 0.35- μm CMOS. Measurement results show that the non-GC (GC) LPF can achieve a DC gain of -3.7 dB (0 dB), an input-referred noise of 36 μV rms (29 μV rms ), a HD3@60 Hz of -55.2 dB ( - 60.7 dB) and a die size of 0.11 mm² (0.08 mm²). Both LPFs draw 15 nW at 3 V. The achieved figure-of-merits (FoMs) are favorably comparable with the state-of-the-art. PMID:24232630

  16. Auroral electron beams - Electric currents and energy sources

    NASA Astrophysics Data System (ADS)

    Kaufmann, R. L.

    1981-09-01

    The energy sources, electric equipotentials and electric currents associated with auroral electron acceleration observed during rocket flight 18:152 are discussed. Steep flow gradients at the interface between the convection boundary layer and the plasma sheet are considered as the probable source of energy for dayside and dawn and dusk auroras, while it is suggested that the cross tail potential drop may provide an energy source for some midnight auroras. Birkeland currents that flow along distorted field lines are shown possibly to be important in the mechanism that produces U-shaped equipotentials in the ionosphere, as well as unexpected jumps in ionospheric or magnetotail currents and unusual electric fields and plasma drift in the magnetotail. The production of equipotential structures under oppositely directed higher-altitude electric fields is discussed, and it is pointed out that cold ionospheric plasma can enter the structure in a cusp-shaped region where fields are weak. The rocket data reveals that the sudden change in conductivity at the edge of the bright arc and the constancy of the electric field produce sudden changes in the Hall and Pedersen currents. It is concluded that current continuity is satisfied primarily by east-west changes in the electric field or conductivity.

  17. Radiation characteristics of scintillator coupled CMOS APS for radiography conditions

    NASA Astrophysics Data System (ADS)

    Kim, Kwang Hyun; Kim, Soongpyung; Kang, Dong-Won; Kim, Dong-Kie

    2006-11-01

    Under industrial radiography conditions, we analyzed short-term radiation characteristics of scintillator coupled CMOS APS (hereinafter SC CMOS APS). By means of experimentation, the contribution of the transmitted X-ray through the scintillator to the properties of the CMOS APS and the afterimage, generated in the acquired image even at low dose condition, were investigated. To see the transmitted X-ray effects on the CMOS APS, Fein focus™ X-ray machine, two scintillators of Lanex™ Fine and Regular, and two CMOS APS array of RadEye™ were used under the conditions of 50 kV p/1 mAs and 100 kV p/1 mAs. By measuring the transmitted X-ray on signal and Noise Power Spectrum, we analytically examined the generation mechanism of the afterimage, based on dark signal or dark current increase in the sensor, and explained the afterimage in the SC CMOS APS.

  18. A new theory of sources of Birkeland currents

    NASA Technical Reports Server (NTRS)

    Cole, K. D.

    1982-01-01

    An approach to collisionless plasma shows the existence of current orthogonal to B along the low latitude boundary layer of the magnetosphere driven by electric field which is orthogonal to both B and the layer. In this case relationship P perpendicular + (sq B/8 pi) - (sq epsilon E perpendicular/8 pi) = constant holds on a line orthogonal to B and the layer, where epsilon is the dielectric constant of the plasma for electric fields orthogonal to B. Across the geomagnetic tail there flows a current in the direction of the dawn-dusk electric field, and in this case a relationship P perpendicular + (sq B/8 pi) + (sq epsilon E perpendicular/8 pi = constant, holds aong a line orthogonal to E and B. Divergence of both these currents is shown to be a source of Birkeland currents. Some of the boundary layer current is continuous with current across the tail. Electric currents of physically similar origin flow in interplanetary space, and when the magnetosphere interrupts them, additional Birkeland currents are driven.

  19. Current status of the Taiwan Photon Source project

    SciTech Connect

    Chang, Shih-Lin

    2014-03-05

    The progress of establishment of a high brightness and low emittance mid-energy storage ring is reported. The status of the 3 GeV Taiwan Photon Source (TPS) currently under construction will be presented. The progress on the civil construction, manufacturing of machine components, as well as the opportunity of using low emittace synchrotron source and phase I beamlines at TPS will be mentioned. The future planning of phase II beamlines and related research will be sketched. Future developments will be also briefly outlined.

  20. Effective shielding to measure beam current from an ion source.

    PubMed

    Bayle, H; Delferrière, O; Gobin, R; Harrault, F; Marroncle, J; Senée, F; Simon, C; Tuske, O

    2014-02-01

    To avoid saturation, beam current transformers must be shielded from solenoid, quad, and RFQ high stray fields. Good understanding of field distribution, shielding materials, and techniques is required. Space availability imposes compact shields along the beam pipe. This paper describes compact effective concatenated magnetic shields for IFMIF-EVEDA LIPAc LEBT and MEBT and for FAIR Proton Linac injector. They protect the ACCT Current Transformers beyond 37 mT radial external fields. Measurements made at Saclay on the SILHI source are presented. PMID:24593447

  1. MEG-based imaging of focal neuronal current sources

    SciTech Connect

    Phillips, J.W.; Leahy, R.M.; Mosher, J.C.

    1997-06-01

    The authors describe a new approach to imaging neural current sources from measurements of the magnetoencephalogram (MEG) associated with sensory, motor, or cognitive brain activation. Many previous approaches to this problem have concentrated on the use of weighted minimum norm (WMN) inverse methods. While these methods ensure a unique solution, they do not introduce information specific to the MEG inverse problem, often producing overly smoothed solutions and exhibiting severe sensitivity to noise. The authors describe a Bayesian formulation of the inverse problem in which a Gibbs prior is constructed to reflect the sparse focal nature of neural current sources associated with evoked response data. They demonstrate the method with simulated and experimental phantom data, comparing its performance with several WMN methods.

  2. ULTRA-LOW-ENERGY HIGH-CURRENT ION SOURCE

    SciTech Connect

    Anders, Andre; Yushkov, Georgy Yu.; Baldwin, David A.

    2009-11-20

    The technical objective of the project was to develop an ultra-low-energy, high-intensity ion source (ULEHIIS) for materials processing in high-technology fields including semiconductors, micro-magnetics and optics/opto-electronics. In its primary application, this ion source can be incorporated into the 4Wave thin-film deposition technique called biased target ion-beam deposition (BTIBD), which is a deposition technique based on sputtering (without magnetic field, i.e., not the typical magnetron sputtering). It is a technological challenge because the laws of space charge limited current (Child-Langmuir) set strict limits of how much current can be extracted from a reservoir of ions, such as a suitable discharge plasma. The solution to the problem was an innovative dual-discharge system without the use of extraction grids.

  3. Hollow cathode and ion accelerator system for current ion sources

    SciTech Connect

    Aston, G.

    1981-01-01

    A small self-heating hollow cathode has been designed and tested which uses a novel flowing plasma starting concept to eliminate the need for cathode heating elements and low work function insert materials. In a magnetic field free ion source, this cathode has reliably and repeatedly produced arc currents, using argon, of 100 ampere (the power supply limit) at arc voltages of 22 volts. The cathode operates with a high gas stagnation pressure and plasma density to produce field enhanced thermionic emission from the electron emitting surface, a 0.02mm thick rolled tungsten foil cylinder, without appreciable erosion of this surface. Possible applications of larger versions of this hollow cathode for use in neutral beam injector ion sources are discussed. An ion accelerator system has also been designed and tested which combines a unique arrangement of multiple hole and slit apertures to amplify the extracted ion current density by a factor of four during the ion acceleration process.

  4. A decaborane ion source for high current implantation

    NASA Astrophysics Data System (ADS)

    Perel, Alex S.; Loizides, William K.; Reynolds, William E.

    2002-02-01

    Progressive semiconductor device scaling in each technology node requires the formation of shallower junctions, and thus lower energy implants. The difficulties associated with extraction and transport of low energy beams often result in a loss in wafer throughput. Implantation of boron using the molecular compound decaborane has been found to allow for the shallow implantation of boron without a significant design change in the implanter. The decaborane molecule has 10 boron atoms and 14 hydrogen atoms. The implanted dose is ten times the electrical dose and the implanted depth is equivalent to the depth of a boron beam at 1/11th of the extraction energy. This advantage can only be exploited with an ion source that does not destroy the fragile molecule. We report on the design of an ion source capable of ionizing decaborane without significant fragmentation of the molecule. After it was shown that the decaborane molecule fragments above 350 °C an ion source was designed to prevent thermal dissociation of the molecule. Competitive boron dose rates were achieved using this source in a commercial high current implanter. In addition, evidence is shown that a decaborane dimer is formed in the ion source and can be implanted.

  5. Top-down fabrication of fully CMOS-compatible silicon nanowire arrays and their integration into CMOS Inverters on plastic.

    PubMed

    Lee, Myeongwon; Jeon, Youngin; Moon, Taeho; Kim, Sangsig

    2011-04-26

    A route to the top-down fabrication of highly ordered and aligned silicon nanowire (SiNW) arrays with degenerately doped source/drain regions from a bulk Si wafer is presented. In this approach, freestanding n- and p-SiNWs with an inverted triangular cross section are obtained using conventional photolithography, crystal orientation dependent wet etching, size reduction oxidation, and ion implantation doping. Based on these n- and p-SiNWs transferred onto a plastic substrate, simple SiNW-based complementary metal-oxide-semiconductor (CMOS) inverters are constructed for the possible applications of these SiNW arrays in integrated circuits on plastic. The static voltage transfer characteristic of the SiNW-based CMOS inverter exhibits a voltage gain of ∼9 V/V and a transition of 0.32 V at an operating voltage of 1.5 V with a full output voltage swing between 0 V and V(DD), and its mechnical bendability indicates good fatigue properties for potential applications of flexible electronics. This novel top-down approach is fully compatible with the current state-of-the-art Si-based CMOS technologies and, therefore, offers greater flexibility in device design for both high-performance and low-power functionality. PMID:21355599

  6. Physics of Intense Electron Current Sources for Helicity Injection

    NASA Astrophysics Data System (ADS)

    Hinson, E. T.; Barr, J. L.; Bongard, M. W.; Burke, M. G.; Fonck, R. J.; Lewicki, B. T.; Perry, J. M.; Redd, A. J.; Winz, G. R.

    2014-10-01

    DC helicity injection (HI) for non-solenoidal ST startup requires sources of current at the tokamak edge. Since the rate of HI scales with injection voltage, understanding of the physics setting injector impedance is necessary for a predictive model of the HI rate and subsequent growth of Ip. In Pegasus, arc plasma sources are used for current injection. They operate immersed in tokamak edge plasma, and are biased at ~1-2 kV with respect to the vessel to draw current densities J ~ 1 kA/cm2 from an arc plasma cathode. Prior to tokamak formation, impedance data manifests two regimes, one at low current (< 1 kA) with I ~V 3 / 2 , and a higher current mode where I ~V 1 / 2 holds. The impedance in the I ~V 3 / 2 regime is consistent with an electrostatic double layer. Current in the I ~V 1 / 2 regime is linear in arc gas fueling rate, suggesting a space-charge limit set by nedge. In the presence of tokamak plasmas, voltage oscillations of the order 100s of volts are measured during MHD relaxation activity. These fluctuations occur at the characteristic frequencies of the n = 1 and n = 0 MHD activity observed on magnetic probes, and are suggestive of dynamic activity found in LHI simulations in NIMROD. Advanced injector design techniques have allowed higher voltage operation. These include staged shielding to prevent external arcing, and shaped cathodes, which minimize the onset and material damage due to cathode spot formation. Work supported by US DOE Grant DE-FG02-96ER54375.

  7. Improved current control makes inverters the power sources of choice

    SciTech Connect

    Yamamoto, H.; Harada, S.; Ueyama, T.

    1997-02-01

    It is now generally understood that by increasing the operating or switching frequency of a power source the size of the main transformer and main reactor can be shrunk. Thus, a 300-A DC welding power source weighing well under 100 lb can be produced. This makes the inverter power source an ideal choice for applications requiring equipment maneuverability. It is also generally understood that due to higher switching frequencies, a smoother output is obtained from inverter power sources. In the late 1980s, the company developed a new double-inverter power source by which inverted DC weld output is inverted back to AC weld output. This product was the first of its kind in the world. Again, the small compact size of this product was of great interest. Utilizing current waveform control, it was realized that fast response switching from electrode negative to electrode positive could be accurately controlled, offering benefits such as AC GTA welding with high-frequency start only, even at a low welding current. The primary benefit is the ability to limit the electrode positive half cycle to less than 5%. The electrode positive half cycle is responsible for tungsten erosion, which also creates the balling effect of a tungsten electrode. By limiting the electrode positive portion of the AC cycle to a very low level, a rather sharp point can be maintained on the tungsten, which creates a very concentrated, focused arc column. This ability provides excellent joint penetration in fillet welding of aluminum alloys, especially on thick plate. It also reduces the heat-affected zone in AC GTA welding of aluminum.

  8. Heliospheric current sheet inclinations predicted from source surface maps

    NASA Technical Reports Server (NTRS)

    Shodhan, S.; Crooker, N. U.; Hughes, W. J.; Siscoe, G. L.

    1994-01-01

    The inclinations of the neutral line at the ecliptic plane derived from source surface model maps of coronal fields are measured for the interval from June 1976 to March 1992. The mean and median values of 53 deg and 57 deg are close to the average inclinations determined earlier from minimum variance analyses of solar wind measurements at sector boundaries, but the mode falls in the 80 deg - 90 deg bin. This result, which is based on the model assumptions implicit in deriving the source surface maps, predicts that the heliospheric current sheet typically intersects the ecliptic plane nearly at right angles, even without steepening by stream interaction regions. High inclinations dominate the solar cycle for about 7 years around solar maximum. Dips to lower inclination occur near solar minimum, but high variance admits a wide range of inclinations throughout the cycle. Compared to the smooth solar cycle variation of the maximum latitudinal excursion of the neutral line, often treated as the tilt angle of a flat heliospheric current sheet, the noisy variation of the inclinations reflects the degree to which the neutral line deviates from a sine wave, implying warps and corrugations in the current sheet. About a third of the time the neutral line so deviates that it doubles back in longitude.

  9. A CMOS-based on-chip neural interface device equipped with integrated LED array for optogenetics.

    PubMed

    Tokuda, T; Miyatani, T; Maezawa, Y; Kobayashi, T; Noda, T; Sasagawa, K; Ohta, J

    2012-01-01

    A novel CMOS-based neural interface device equipped with an integrated micro light source array was proposed and demonstrated. Target application of the device is optogenetics. GaInN LED array formed on sapphire substrate was successfully assembled with a multifunctional CMOS image sensor which is capable of injecting current via any of the pixel. We demonstrated addressable LED operation with the present device. The device has advantages such as simultaneous multi-site stimulation and on-chip optical imaging, that are not available with previously reported LED array device for optogenetics. PMID:23367087

  10. Renewable energy sources in Bulgaria: Current state and trends

    NASA Astrophysics Data System (ADS)

    Kolev, K.

    The over-dependency of Bulgaria on imported fuel stressed the importance of developing a new energy strategy based on energy saving which includes also using renewable energy sources (RES). The target is the substitution of at least 2 percent of the real primary energy consumption with RES by 2010. The author gives a generalized analysis of the available RES in Bulgaria -solar, wind, geothermal, biomass and mini-hydraulic. The potentialities of each source for its usage as a suitable energy supply are pointed out, as well as the current status of research and implementation work, problems connected with legislation, financing and production of particular facilities. The governmental policy concerning RES is considered briefly. A description is given to the project 'Technical and Economical Assessment of Possibilities for Expansion of the RES-part in the Energy Balance of the Country' developed and started in 1994 in the framework of the PHARE program.

  11. Electric machine and current source inverter drive system

    DOEpatents

    Hsu, John S

    2014-06-24

    A drive system includes an electric machine and a current source inverter (CSI). This integration of an electric machine and an inverter uses the machine's field excitation coil for not only flux generation in the machine but also for the CSI inductor. This integration of the two technologies, namely the U machine motor and the CSI, opens a new chapter for the component function integration instead of the traditional integration by simply placing separate machine and inverter components in the same housing. Elimination of the CSI inductor adds to the CSI volumetric reduction of the capacitors and the elimination of PMs for the motor further improve the drive system cost, weight, and volume.

  12. High current liquid metal ion source using porous tungsten multiemitters.

    PubMed

    Tajmar, M; Vasiljevich, I; Grienauer, W

    2010-12-01

    We recently developed an indium Liquid-Metal-Ion-Source that can emit currents from sub-μA up to several mA. It is based on a porous tungsten crown structure with 28 individual emitters, which is manufactured using Micro-Powder Injection Molding (μPIM) and electrochemical etching. The emitter combines the advantages of internal capillary feeding with excellent emission properties due to micron-size tips. Significant progress was made on the homogeneity of the emission over its current-voltage characteristic as well as on investigating its long-term stability. This LMIS seems very suitable for space propulsion as well as for micro/nano manufacturing applications with greatly increased milling/drilling speeds. This paper summarizes the latest developments on our porous multiemitters with respect to manufacturing, emission properties and long-term testing. PMID:21111260

  13. CMOS VCSEL driver circuit for 25+Gbps/channel short-reach parallel optical links

    NASA Astrophysics Data System (ADS)

    Shibata, Masumi

    This thesis proposes a new CMOS driver for Vertical Cavity Surface Emitting LASER (VCSEL) diode arrays. A VCSEL is a promising light source for optical communication. However, its threshold voltage (1.5V for a 850-nm VCSEL) exceeds the rated supply voltage of nanoscale CMOS technologies. This makes difficult designing a driver sourcing a modulated current to a VCSELs anode directly, an arrangement suitable for low-cost parallel optical links. To overcome this problem, a combination of analog circuit techniques is proposed including a novel pad shield driving technique. A prototype fabricated in a 65-nm CMOS technology achieved 26-Gb/s bit-rate and 1.80-pJ/b power efficiency with an optical modulation amplitude (OMA) of +1.8dBm and 3.1ps-rms jitter when driving a 850-nm 14Gb/s commercial VCSEL. This is the highest-speed anode-driving CMOS VCSEL driver reported to date. Also it has the best power efficiency and the smallest area (0:024 mm2) amongst anode-driving drivers in any process technology.

  14. High-current negative-ion sources for pulsed spallation neutron sources: LBNL workshop, October 1994

    SciTech Connect

    Alonso, J.R.

    1995-09-01

    The neutron scattering community has endorsed the need for a high-power (1 to 5 MW) accelerator-driven source of neutrons for materials research. Properly configured, the accelerator could produce very short (sub-microsecond) bursts of cold neutrons, said time structure offering advantages over the continuous flux from a reactor. The recent cancellation of the ANS reactor project has increased the urgency to develop a comprehensive strategy based on the best technological scenarios. Studies to date have built on the experience from ISIS (the 160 kW source in the UK), and call for a high-current (approx. 100 mA peak) H- source-linac combination injecting into one or more accumulator rings in which beam may be further accelerated. The I to 5 GeV proton beam is extracted in a single turn and brought to the target-moderator stations. The high current, high duty-factor, high brightness and high reliability required of the ion source present a very large challenge to the ion source community. The Workshop reported on here, held in Berkeley in October 1994, analyzed in detail the source requirements for proposed accelerator scenarios, the present performance capabilities of different H- source technologies, and identified necessary R&D efforts to bridge the gap.

  15. High current DC negative ion source for cyclotron

    NASA Astrophysics Data System (ADS)

    Etoh, H.; Onai, M.; Aoki, Y.; Mitsubori, H.; Arakawa, Y.; Sakuraba, J.; Kato, T.; Mitsumoto, T.; Hiasa, T.; Yajima, S.; Shibata, T.; Hatayama, A.; Okumura, Y.

    2016-02-01

    A filament driven multi-cusp negative ion source has been developed for proton cyclotrons in medical applications. In Cs-free operation, continuous H- beam of 10 mA and D- beam of 3.3 mA were obtained stably at an arc-discharge power of 3 kW and 2.4 kW, respectively. In Cs-seeded operation, H- beam current reached 22 mA at a lower arc power of 2.6 kW with less co-extracted electron current. The optimum gas flow rate, which gives the highest H- current, was 15 sccm in the Cs-free operation, while it decreased to 4 sccm in the Cs-seeded operation. The relationship between H- production and the design/operating parameters has been also investigated by a numerical study with KEIO-MARC code, which gives a reasonable explanation to the experimental results of the H- current dependence on the arc power.

  16. High current DC negative ion source for cyclotron.

    PubMed

    Etoh, H; Onai, M; Aoki, Y; Mitsubori, H; Arakawa, Y; Sakuraba, J; Kato, T; Mitsumoto, T; Hiasa, T; Yajima, S; Shibata, T; Hatayama, A; Okumura, Y

    2016-02-01

    A filament driven multi-cusp negative ion source has been developed for proton cyclotrons in medical applications. In Cs-free operation, continuous H(-) beam of 10 mA and D(-) beam of 3.3 mA were obtained stably at an arc-discharge power of 3 kW and 2.4 kW, respectively. In Cs-seeded operation, H(-) beam current reached 22 mA at a lower arc power of 2.6 kW with less co-extracted electron current. The optimum gas flow rate, which gives the highest H(-) current, was 15 sccm in the Cs-free operation, while it decreased to 4 sccm in the Cs-seeded operation. The relationship between H(-) production and the design/operating parameters has been also investigated by a numerical study with KEIO-MARC code, which gives a reasonable explanation to the experimental results of the H(-) current dependence on the arc power. PMID:26932017

  17. Nanopore-CMOS Interfaces for DNA Sequencing.

    PubMed

    Magierowski, Sebastian; Huang, Yiyun; Wang, Chengjie; Ghafar-Zadeh, Ebrahim

    2016-01-01

    DNA sequencers based on nanopore sensors present an opportunity for a significant break from the template-based incumbents of the last forty years. Key advantages ushered by nanopore technology include a simplified chemistry and the ability to interface to CMOS technology. The latter opportunity offers substantial promise for improvement in sequencing speed, size and cost. This paper reviews existing and emerging means of interfacing nanopores to CMOS technology with an emphasis on massively-arrayed structures. It presents this in the context of incumbent DNA sequencing techniques, reviews and quantifies nanopore characteristics and models and presents CMOS circuit methods for the amplification of low-current nanopore signals in such interfaces. PMID:27509529

  18. New progress of high current gasdynamic ion source (invited)

    NASA Astrophysics Data System (ADS)

    Skalyga, V.; Izotov, I.; Golubev, S.; Sidorov, A.; Razin, S.; Vodopyanov, A.; Tarvainen, O.; Koivisto, H.; Kalvas, T.

    2016-02-01

    The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)—the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller's ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma with significant density (up to 8 × 1013 cm-3) and to maintain the main advantages of conventional ECRIS such as high ionization degree and low ion energy. Reaching such high plasma density relies on the fact that the critical density grows with the microwave frequency squared. High microwave power provided the average electron energy on a level of 50-300 eV enough for efficient ionization even at neutral gas pressure range of 10-4-10-3 mbar. Gasdynamic ECRIS has demonstrated a good performance producing high current (100-300 mA) multi-charged ion beams with moderate average charge (Z = 4-5 for argon). Gasdynamic ECRIS has appeared to be especially effective in low emittance hydrogen and deuterium beams formation. Proton beams with current up to 500 emA and RMS emittance below 0.07 π ṡ mm ṡ mrad have been demonstrated in recent experiments.

  19. New progress of high current gasdynamic ion source (invited).

    PubMed

    Skalyga, V; Izotov, I; Golubev, S; Sidorov, A; Razin, S; Vodopyanov, A; Tarvainen, O; Koivisto, H; Kalvas, T

    2016-02-01

    The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)-the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller's ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma with significant density (up to 8 × 10(13) cm(-3)) and to maintain the main advantages of conventional ECRIS such as high ionization degree and low ion energy. Reaching such high plasma density relies on the fact that the critical density grows with the microwave frequency squared. High microwave power provided the average electron energy on a level of 50-300 eV enough for efficient ionization even at neutral gas pressure range of 10(-4)-10(-3) mbar. Gasdynamic ECRIS has demonstrated a good performance producing high current (100-300 mA) multi-charged ion beams with moderate average charge (Z = 4-5 for argon). Gasdynamic ECRIS has appeared to be especially effective in low emittance hydrogen and deuterium beams formation. Proton beams with current up to 500 emA and RMS emittance below 0.07 π ⋅ mm ⋅ mrad have been demonstrated in recent experiments. PMID:26931934

  20. Evaluation of MOBILE-based gate-level pipelining augmenting CMOS with RTDs

    NASA Astrophysics Data System (ADS)

    Nuñez, Juan; Avedillo, María J.; Quintana, José M.

    2011-05-01

    The incorporation of Resonant Tunnel Diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance: higher circuit speed, reduced component count, and/or lowered power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS) is an area of active research. Although some works have focused the evaluation of the advantages of this incorporation, additional work in this direction is required. We compare RTD-CMOS and pure CMOS realizations of a network of logic gates which can be operated in a gate-level pipeline. Significant lower average power is obtained for RTD-CMOS implementations.

  1. A review on high-resolution CMOS delay lines: towards sub-picosecond jitter performance.

    PubMed

    Abdulrazzaq, Bilal I; Abdul Halin, Izhal; Kawahito, Shoji; Sidek, Roslina M; Shafie, Suhaidi; Yunus, Nurul Amziah Md

    2016-01-01

    A review on CMOS delay lines with a focus on the most frequently used techniques for high-resolution delay step is presented. The primary types, specifications, delay circuits, and operating principles are presented. The delay circuits reported in this paper are used for delaying digital inputs and clock signals. The most common analog and digitally-controlled delay elements topologies are presented, focusing on the main delay-tuning strategies. IC variables, namely, process, supply voltage, temperature, and noise sources that affect delay resolution through timing jitter are discussed. The design specifications of these delay elements are also discussed and compared for the common delay line circuits. As a result, the main findings of this paper are highlighting and discussing the followings: the most efficient high-resolution delay line techniques, the trade-off challenge found between CMOS delay lines designed using either analog or digitally-controlled delay elements, the trade-off challenge between delay resolution and delay range and the proposed solutions for this challenge, and how CMOS technology scaling can affect the performance of CMOS delay lines. Moreover, the current trends and efforts used in order to generate output delayed signal with low jitter in the sub-picosecond range are presented. PMID:27104122

  2. Implantable CMOS Biomedical Devices

    PubMed Central

    Ohta, Jun; Tokuda, Takashi; Sasagawa, Kiyotaka; Noda, Toshihiko

    2009-01-01

    The results of recent research on our implantable CMOS biomedical devices are reviewed. Topics include retinal prosthesis devices and deep-brain implantation devices for small animals. Fundamental device structures and characteristics as well as in vivo experiments are presented. PMID:22291554

  3. 200-Mbps optical integrated circuit design and first iteration realizations in 1.2- and 0.8-micron Bi-CMOS technology

    NASA Astrophysics Data System (ADS)

    Snyman, Lukas W.; Chaing, C.-T.; Bogalecki, Alfons; Du Plessis, Monuko; Aharoni, Herzl

    2004-07-01

    A prototype Silicon CMOS Optical Integrated Circuit (Si CMOS OEIC) was designed and simulated using standard 0.8 micron Bi-CMOS silicon integrated circuit technology. The circuit consisted of an integrated silicon light emitting source, an optical wave-guiding structure, two integrated optical detectors and two high-gain CMOS transimpedance analogue amplifiers. Simulations with MicroSim PSpice software predict a utilizable bandwidth capability of up to 220 MHz for the trans-impedance amplifier for detected photo-currents at the input of the amplifier in the range of 1 nA to 100 nA and driving a 10mV to 1 V signal into a 100 kΩ load. First iteration OEIC structures were realised in 1.2 micron CMOS technology for various source-waveguide-detector arrangements. Current signal ranging from 1nA to 1 micro-amp was detected at detectors. The technology seems favorable for first-iteration implementation for digital communications on chip up to 200Mbps.

  4. A high current, short pulse electron source for wakefield accelerators

    SciTech Connect

    Ho, Ching-Hung.

    1992-01-01

    Design studies for the generation of a high current, short pulse electron source for the Argonne Wakefield Accelerator are presented. An L-band laser photocathode rf gun cavity is designed using the computer code URMEL to maximize the electric field on the cathode surface for fixed frequency and rf input power. A new technique using a curved incoming laser wavefront to minimize the space charge effect near the photocathode is studied. A preaccelerator with large iris to minimize wakefield effects is used to boost the drive beam to a useful energy of around 20 MeV for wakefield acceleration experiments. Focusing in the photocathode gun and the preaccelerator is accomplished with solenoids. Beam dynamics simulations throughout the preaccelerator are performed using particle simulation codes TBCI-SF and PARMELA. An example providing a useful set of operation parameters for the Argonne Wakefield Accelerator is given. The effects of the sagitta of the curved beam and laser amplitude and timing jitter effects are discussed. Measurement results of low rf power level bench tests and a high power test for the gun cavity are presented and discussed.

  5. A high current, short pulse electron source for wakefield accelerators

    SciTech Connect

    Ho, Ching-Hung

    1992-12-31

    Design studies for the generation of a high current, short pulse electron source for the Argonne Wakefield Accelerator are presented. An L-band laser photocathode rf gun cavity is designed using the computer code URMEL to maximize the electric field on the cathode surface for fixed frequency and rf input power. A new technique using a curved incoming laser wavefront to minimize the space charge effect near the photocathode is studied. A preaccelerator with large iris to minimize wakefield effects is used to boost the drive beam to a useful energy of around 20 MeV for wakefield acceleration experiments. Focusing in the photocathode gun and the preaccelerator is accomplished with solenoids. Beam dynamics simulations throughout the preaccelerator are performed using particle simulation codes TBCI-SF and PARMELA. An example providing a useful set of operation parameters for the Argonne Wakefield Accelerator is given. The effects of the sagitta of the curved beam and laser amplitude and timing jitter effects are discussed. Measurement results of low rf power level bench tests and a high power test for the gun cavity are presented and discussed.

  6. Low energy CMOS for space applications

    NASA Technical Reports Server (NTRS)

    Panwar, Ramesh; Alkalaj, Leon

    1992-01-01

    The current focus of NASA's space flight programs reflects a new thrust towards smaller, less costly, and more frequent space missions, when compared to missions such as Galileo, Magellan, or Cassini. Recently, the concept of a microspacecraft was proposed. In this concept, a small, compact spacecraft that weighs tens of kilograms performs focused scientific objectives such as imaging. Similarly, a Mars Lander micro-rover project is under study that will allow miniature robots weighing less than seven kilograms to explore the Martian surface. To bring the microspacecraft and microrover ideas to fruition, one will have to leverage compact 3D multi-chip module-based multiprocessors (MCM) technologies. Low energy CMOS will become increasingly important because of the thermodynamic considerations in cooling compact 3D MCM implementations and also from considerations of the power budget for space applications. In this paper, we show how the operating voltage is related to the threshold voltage of the CMOS transistors for accomplishing a task in VLSI with minimal energy. We also derive expressions for the noise margins at the optimal operating point. We then look at a low voltage CMOS (LVCMOS) technology developed at Stanford University which improves the power consumption over conventional CMOS by a couple of orders of magnitude and consider the suitability of the technology for space applications by characterizing its SEU immunity.

  7. Low energy CMOS for space applications

    NASA Astrophysics Data System (ADS)

    Panwar, Ramesh; Alkalaj, Leon

    The current focus of NASA's space flight programs reflects a new thrust towards smaller, less costly, and more frequent space missions, when compared to missions such as Galileo, Magellan, or Cassini. Recently, the concept of a microspacecraft was proposed. In this concept, a small, compact spacecraft that weighs tens of kilograms performs focused scientific objectives such as imaging. Similarly, a Mars Lander micro-rover project is under study that will allow miniature robots weighing less than seven kilograms to explore the Martian surface. To bring the microspacecraft and microrover ideas to fruition, one will have to leverage compact 3D multi-chip module-based multiprocessors (MCM) technologies. Low energy CMOS will become increasingly important because of the thermodynamic considerations in cooling compact 3D MCM implementations and also from considerations of the power budget for space applications. In this paper, we show how the operating voltage is related to the threshold voltage of the CMOS transistors for accomplishing a task in VLSI with minimal energy. We also derive expressions for the noise margins at the optimal operating point. We then look at a low voltage CMOS (LVCMOS) technology developed at Stanford University which improves the power consumption over conventional CMOS by a couple of orders of magnitude and consider the suitability of the technology for space applications by characterizing its SEU immunity.

  8. Envelope tracking CMOS power amplifier with high-speed CMOS envelope amplifier for mobile handsets

    NASA Astrophysics Data System (ADS)

    Yoshida, Eiji; Sakai, Yasufumi; Oishi, Kazuaki; Yamazaki, Hiroshi; Mori, Toshihiko; Yamaura, Shinji; Suto, Kazuo; Tanaka, Tetsu

    2014-01-01

    A high-efficiency CMOS power amplifier (PA) based on envelope tracking (ET) has been reported for a wideband code division multiple access (W-CDMA) and long term evolution (LTE) application. By adopting a high-speed CMOS envelope amplifier with current direction sensing, a 5% improvement in total power-added efficiency (PAE) and a 11 dB decrease in adjacent channel leakage ratio (ACLR) are achieved with a W-CDMA signal. Moreover, the proposed PA achieves a PAE of 25.4% for a 10 MHz LTE signal at an output power (Pout) of 25.6 dBm and a gain of 24 dB.

  9. CCD and CMOS sensors

    NASA Astrophysics Data System (ADS)

    Waltham, Nick

    The charge-coupled device (CCD) has been developed primarily as a compact image sensor for consumer and industrial markets, but is now also the preeminent visible and ultraviolet wavelength image sensor in many fields of scientific research including space-science and both Earth and planetary remote sensing. Today"s scientific or science-grade CCD will strive to maximise pixel count, focal plane coverage, photon detection efficiency over the broadest spectral range and signal dynamic range whilst maintaining the lowest possible readout noise. The relatively recent emergence of complementary metal oxide semiconductor (CMOS) image sensor technology is arguably the most important development in solid-state imaging since the invention of the CCD. CMOS technology enables the integration on a single silicon chip of a large array of photodiode pixels alongside all of the ancillary electronics needed to address the array and digitise the resulting analogue video signal. Compared to the CCD, CMOS promises a more compact, lower mass, lower power and potentially more radiation tolerant camera.

  10. Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Wang, Zujun; Ma, Wuying; Huang, Shaoyan; Yao, Zhibin; Liu, Minbo; He, Baoping; Liu, Jing; Sheng, Jiangkun; Xue, Yuan

    2016-03-01

    The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS) based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU), photo response non-uniformity (PRNU), overall system gain, saturation output, dynamic range (DR), signal to noise ratio (SNR), quantum efficiency (QE), and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.

  11. Synchronization between two coupled direct current glow discharge plasma sources

    SciTech Connect

    Chaubey, Neeraj; Mukherjee, S.; Sen, A.; Sekar Iyengar, A. N.

    2015-02-15

    Experimental results on the nonlinear dynamics of two coupled glow discharge plasma sources are presented. A variety of nonlinear phenomena including frequency synchronization and frequency pulling are observed as the coupling strength is varied. Numerical solutions of a model representation of the experiment consisting of two coupled asymmetric Van der Pol type equations are found to be in good agreement with the observed results.

  12. Single photon detection and localization accuracy with an ebCMOS camera

    NASA Astrophysics Data System (ADS)

    Cajgfinger, T.; Dominjon, A.; Barbier, R.

    2015-07-01

    The CMOS sensor technologies evolve very fast and offer today very promising solutions to existing issues facing by imaging camera systems. CMOS sensors are very attractive for fast and sensitive imaging thanks to their low pixel noise (1e-) and their possibility of backside illumination. The ebCMOS group of IPNL has produced a camera system dedicated to Low Light Level detection and based on a 640 kPixels ebCMOS with its acquisition system. After reminding the principle of detection of an ebCMOS and the characteristics of our prototype, we confront our camera to other imaging systems. We compare the identification efficiency and the localization accuracy of a point source by four different photo-detection devices: the scientific CMOS (sCMOS), the Charge Coupled Device (CDD), the Electron Multiplying CCD (emCCD) and the Electron Bombarded CMOS (ebCMOS). Our ebCMOS camera is able to identify a single photon source in less than 10 ms with a localization accuracy better than 1 μm. We report as well efficiency measurement and the false positive identification of the ebCMOS camera by identifying more than hundreds of single photon sources in parallel. About 700 spots are identified with a detection efficiency higher than 90% and a false positive percentage lower than 5. With these measurements, we show that our target tracking algorithm can be implemented in real time at 500 frames per second under a photon flux of the order of 8000 photons per frame. These results demonstrate that the ebCMOS camera concept with its single photon detection and target tracking algorithm is one of the best devices for low light and fast applications such as bioluminescence imaging, quantum dots tracking or adaptive optics.

  13. Solar wind pressure as a source of ring current development

    NASA Astrophysics Data System (ADS)

    Kalegaev, Vladimir; Vlasova, Natalia

    The ring current development during magnetic storms was studied on the basis of satellite data and theoretical modeling. Comparative analysis of magnetospheric particle fluxes (30-80 keV protons in the near-equatorial region and in the region of isotropic precipitations) measured by low-altitude polar sun-synchronous NOAA satellites (POES 15, 16, 17) during magnetic storms on 21-22.01.2005 and 14-15.12.2006 was carried out. It was obtained that regardless of the intensity of the geomagnetic disturbance, the proton fluxes as well as isotropic boundary and maximum precipitation locations were approximately the same during maximum of two storms. It was shown that ring current development during 21-22.01.2005 magnetic storm was provided by prolonged extremely strong solar wind influence on the Earth's magnetosphere. Extreme pressure pulse during SSC caused intensive trapped particle radial diffusion and subsequent ring current enhancement similar to that taking place due to particle injection from the tail. Ring current development during 14-15.12.2006 was due to IMF southward turning. Magnetospheric compression during SSC was not too strong to create storm-time ring current.

  14. The source of O+ in the storm time ring current

    NASA Astrophysics Data System (ADS)

    Kistler, L. M.; Mouikis, C. G.; Spence, H. E.; Menz, A. M.; Skoug, R. M.; Funsten, H. O.; Larsen, B. A.; Mitchell, D. G.; Gkioulidou, M.; Wygant, J. R.; Lanzerotti, L. J.

    2016-06-01

    A stretched and compressed geomagnetic field occurred during the main phase of a geomagnetic storm on 1 June 2013. During the storm the Van Allen Probes spacecraft made measurements of the plasma sheet boundary layer and observed large fluxes of O+ ions streaming up the field line from the nightside auroral region. Prior to the storm main phase there was an increase in the hot (>1 keV) and more isotropic O+ ions in the plasma sheet. In the spacecraft inbound pass through the ring current region during the storm main phase, the H+ and O+ ions were significantly enhanced. We show that this enhanced inner magnetosphere ring current population is due to the inward adiabatic convection of the plasma sheet ion population. The energy range of the O+ ion plasma sheet that impacts the ring current most is found to be from ~5 to 60 keV. This is in the energy range of the hot population that increased prior to the start of the storm main phase, and the ion fluxes in this energy range only increase slightly during the extended outflow time interval. Thus, the auroral outflow does not have a significant impact on the ring current during the main phase. The auroral outflow is transported to the inner magnetosphere but does not reach high enough energies to affect the energy density. We conclude that the more energetic O+ that entered the plasma sheet prior to the main phase and that dominates the ring current is likely from the cusp.

  15. The Speedster-EXD - A New Event-Triggered Hybrid CMOS X-ray Detector

    NASA Astrophysics Data System (ADS)

    Griffith, Christopher; Falcone, Abe; Prieskorn, Zach; Burrows, David

    2015-04-01

    We present the characterization of a new event driven x-ray hybrid CMOS detector developed by Penn State University in collaboration with Teledyne Imaging Sensors. Hybrid CMOS detectors currently have many advantages over CCDs including lower susceptibility to radiation damage, lower power consumption, and faster read-out time to avoid pile-up. The Speedster-EXD hybrid CMOS detector has many new features that improve upon the previous generation of detectors including two new in-pixel features that reduce noise from known noise sources: (1) a low-noise, high-gain CTIA amplifier to eliminate interpixel capacitance crosstalk and (2) in-pixel CDS subtraction to reduce kTC noise. The most exciting new feature of the Speedster-EXD is an in-pixel comparator that enables read out of only the pixels which contain signal from an x-ray event. The comparator threshold can be set by the user so that only pixels with signal above the set threshold are read out. This comparator feature can increase effective frame rate by orders of magnitude. We present the read noise, dark current, interpixel capacitance, energy resolution, and gain variation measurements of two Speedster-EXD detectors.

  16. Current Status of the SAGA Light Source Commissioning

    SciTech Connect

    Tomimasu, T.; Koda, S.; Iwasaki, Y.; Takabayashi, Y.; Yoshida, K.; Ohgaki, H.

    2007-01-19

    The SAGA Light Source (SAGA-LS) is the third-generation synchrotron light source designed, constructed and operated by Saga Prefecture, the Japanese local government, for the promotion of scientific researches and industrial applications in Kyushu area. The SAGA-LS consists of a 250-MeV electron linac injector and a 1.4-GeV storage ring with eight double-bend (DB) cell and eight 2.93-m long straight sections. The DB cell structure with a distributed dispersion system was chosen to produce a compact and low cost ring of 75.6-m long circumference. The construction budget was 1.94 billion yen for the light source and 1.1 billion yen for the building. The machine installation started on September 29, 2003. The commissioning began on August 24, 2004. The first synchrotron light was observed on November 12. The commissioning goal of 1.4GeV-100mA was achieved on August 25, 2005. The SAGA-LS was opened for users in February 17, 2006.

  17. An efficient current-based logic cell model for crosstalk delay analysis

    NASA Astrophysics Data System (ADS)

    Nazarian, Shahin; Das, Debasish

    2013-04-01

    Logic cell modelling is an important component in the analysis and design of CMOS integrated circuits, mostly due to nonlinear behaviour of CMOS cells with respect to the voltage signal at their input and output pins. A current-based model for CMOS logic cells is presented, which can be used for effective crosstalk noise and delta delay analysis in CMOS VLSI circuits. Existing current source models are expensive and need a new set of Spice-based characterisation, which is not compatible with typical EDA tools. In this article we present Imodel, a simple nonlinear logic cell model that can be derived from the typical cell libraries such as NLDM, with accuracy much higher than NLDM-based cell delay models. In fact, our experiments show an average error of 3% compared to Spice. This level of accuracy comes with a maximum runtime penalty of 19% compared to NLDM-based cell delay models on medium-sized industrial designs.

  18. Design of a high performance CMOS charge pump for phase-locked loop synthesizers

    NASA Astrophysics Data System (ADS)

    Zhiqun, Li; Shuangshuang, Zheng; Ningbing, Hou

    2011-07-01

    A new high performance charge pump circuit is designed and realized in 0.18 μm CMOS process. A wide input ranged rail-to-rail operational amplifier and self-biasing cascode current mirror are used to enable the charge pump current to be well matched in a wide output voltage range. Furthermore, a method of adding a precharging current source is proposed to increase the initial charge current, which will speed up the settling time of CPPLLs. Test results show that the current mismatching can be less than 0.4% in the output voltage range of 0.4 to 1.7 V, with a charge pump current of 100 μA and a precharging current of 70 μA. The average power consumption of the charge pump in the locked condition is around 0.9 mW under a 1.8 V supply voltage.

  19. OLED-on-CMOS integration for optoelectronic sensor applications

    NASA Astrophysics Data System (ADS)

    Vogel, Uwe; Kreye, Daniel; Reckziegel, Sven; Törker, Michael; Grillberger, Christiane; Amelung, Jörg

    2007-02-01

    Highly-efficient, low-voltage organic light emitting diodes (OLEDs) are well suitable for post-processing integration onto the top metal layer of CMOS devices. This has been proven for OLED microdisplays so far. Moreover, OLEDon- CMOS technology may also be excellently suitable for various optoelectronic sensor applications by combining highly efficient emitters, use of low-cost materials and cost-effective manufacturing together with silicon-inherent photodetectors and CMOS circuitry. The use of OLEDs on CMOS substrates requires a top-emitting, low-voltage and highly efficient OLED structure. By reducing the operating voltage for the OLED below 5V, the costs for the CMOS process can be reduced, because a process without high-voltage option can be used. Red, orange, white, green and blue OLED-stacks with doped charge transport layers were prepared on different dualmetal layer CMOS test substrates without active transistor area. Afterwards, the different devices were measured and compared with respect to their performance (current, luminance, voltage, luminance dependence on viewing angle, optical outcoupling etc.). Low operating voltages of 2.4V at 100cd/m2 for the red p-i-n type phosphorescent emitting OLED stack, 2.5V at 100cd/m2 for the orange phosphorescent emitting OLED stack and 3.2V at 100cd/m2 for the white fluorescent emitting OLED have been achieved here. Therefore, those OLED stacks are suitable for use in a CMOS process even within a regular 5V process option. Moreover, the operating voltage achieved so far is expected to be reduced further when using different top electrode materials. Integrating such OLEDs on a CMOS-substrate provide a preferable choice for silicon-based optical microsystems targeted towards optoelectronic sensor applications, as there are integrated light barriers, optocouplers, or lab-onchip devices.

  20. Low Temperature Heat Source Utilization Current and Advanced Technology

    SciTech Connect

    Anderson, James H. Jr.; Dambly, Benjamin W.

    1992-06-01

    Once a geothermal heat source has been identified as having the potential for development, and its thermal, physical, and chemical characteristics have been determined, a method of utilization must be decided upon. This compendium will touch upon some of these concerns, and hopefully will provide the reader with a better understanding of technologies being developed that will be applicable to geothermal development in East Africa, as well as other parts of the world. The appendices contain detailed reports on Down-the-Well Turbo Pump, The Vapor-Turbine Cycle for Geothermal Power Generation, Heat Exchanger Design for Geothermal Power Plants, and a Feasibility Study of Combined Power and Water Desalting Plant Using Hot Geothermal Water. [DJE-2005

  1. Current-free double layers in helicon sources

    NASA Astrophysics Data System (ADS)

    Su, Yu-Jeng; Shaing, K. C.

    2011-10-01

    A model for the formation of a stationary current-free double layer in collisionless plasmas expanding in a magnetic nozzle is presented. The model consists of the dynamics of cold ions, isothermal hot electrons and fere-isothermal, i.e. almost isothermal, cold electrons. It can determine the position and amplitude of the double layer including the jump in cold electron temperature across the layer. The magnitude of the jump is consistent with experimental observations. Plasmas are accelerated mainly by the magnetic nozzle and the contribution from the double layer is small. The important effects of the ion charge state Z on the flow speed at the nozzle throat and at the exit are also discussed. It is found that the Mach number at the magnetic nozzle throat is \\sqrt Z which can be tested in experiments. The exit velocity also scales as \\sqrt Z . To increase the thrust power, the ion charge state Z could be an important parameter.

  2. Ring energy and current considerations for spallation neutron source

    SciTech Connect

    Blumberg, L.N.

    1994-04-01

    The most desirable energy E{sub o} of protons from the synchrotron and thus beam current {bar I} to produced a given beam power P{sub B} involves a balanced consideration of neutron production capability, accelerator beam stability, user requirements, and cost considerations. The present solution consists of two 3.6-GeV rings with a 600-MeV Linac injector, a compromise between conflicting factors of cost and technical concern. The authors believe that the design is a conservative one. They could increase the beam energy and/or the repetition rate and thereby decrease the requirement for the number of protons N{sub o} in the ring which in the present design is an extrapolation of about a factor of 7 from existing ring intensities. However, the specified ring acceptance appears quite adequate to contain the required 1.45 10{sup 14} protons/ring and the resulting loss in the target window and target are reasonable. The beam power and current are indeed modest in terms of window and target integrity compared to the 200 MW, 200mA 1-GeV design for the APT. The two-ring approach also offers several practical advantages -- the project is stageable in the sense that only one ring may be required initially to achieve P{sub B} = 2.5 MW power on the target with subsequent expansion to 5 MW with addition of the second ring. Two rings also provide additional reliability in the sense that the user program need not be interrupted by failure of one ring.

  3. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging.

    PubMed

    Esposito, M; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Evans, P M; Allinson, N M; Wells, K

    2014-07-01

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  4. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging

    NASA Astrophysics Data System (ADS)

    Esposito, M.; Anaxagoras, T.; Konstantinidis, A. C.; Zheng, Y.; Speller, R. D.; Evans, P. M.; Allinson, N. M.; Wells, K.

    2014-07-01

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  5. Solar quiet day ionospheric source current in the West African region

    PubMed Central

    Obiekezie, Theresa N.; Okeke, Francisca N.

    2012-01-01

    The Solar Quiet (Sq) day source current were calculated using the magnetic data obtained from a chain of 10 magnetotelluric stations installed in the African sector during the French participation in the International Equatorial Electrojet Year (IEEY) experiment in Africa. The components of geomagnetic field recorded at the stations from January–December in 1993 during the experiment were separated into the source and (induced) components of Sq using Spherical Harmonics Analysis (SHA) method. The range of the source current was calculated and this enabled the viewing of a full year’s change in the source current system of Sq. PMID:25685434

  6. Solar quiet day ionospheric source current in the West African region.

    PubMed

    Obiekezie, Theresa N; Okeke, Francisca N

    2013-05-01

    The Solar Quiet (Sq) day source current were calculated using the magnetic data obtained from a chain of 10 magnetotelluric stations installed in the African sector during the French participation in the International Equatorial Electrojet Year (IEEY) experiment in Africa. The components of geomagnetic field recorded at the stations from January-December in 1993 during the experiment were separated into the source and (induced) components of Sq using Spherical Harmonics Analysis (SHA) method. The range of the source current was calculated and this enabled the viewing of a full year's change in the source current system of Sq. PMID:25685434

  7. A Novel Current Angle Control Scheme in a Current Source Inverter Fed Permanent Magnet Synchronous Motor Drive for Automotive Applications

    SciTech Connect

    Tang, Lixin; Su, Gui-Jia

    2011-01-01

    This paper describes a novel speed control scheme to operate a current source inverter (CSI) driven surface-mounted permanent magnet synchronous machine (SPMSM) for hybrid electric vehicles (HEVs) applications. The idea is to use the angle of the current vector to regulate the rotor speed while keeping the two dc-dc converter power switches on all the time to boost system efficiency. The effectiveness of the proposed scheme was verified with a 3 kW CSI-SPMSM drive prototype.

  8. An excitation signal source with anti-interference ability for eddy current testing

    NASA Astrophysics Data System (ADS)

    Jiang, Guodong; Li, Po

    2015-02-01

    An eddy current excitation signal source was designed based on the linear control theory. By analyzing the interference and characteristics of signal source, a multi-input-single-output (MISO) feedback control system was designed and created using a lock-in amplifier, and an eddy current sensor was applied in the feedback loop of the system. As a result, the noise in the loop circuit was suppressed; this resolved the current instability problem in eddy current sensor. Furthermore, a mathematical model was established, and the stability and bandwidth of the system were verified by simulations. Compared with the traditional signal sources, experimental results show that this signal source had steadier current output, smaller temperature drift and stronger load capability. Therefore, the foil thickness measurement based on this signal source had a very high accuracy.

  9. Improved Signal Chains for Readout of CMOS Imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata; Hancock, Bruce; Cunningham, Thomas

    2009-01-01

    An improved generic design has been devised for implementing signal chains involved in readout from complementary metal oxide/semiconductor (CMOS) image sensors and for other readout integrated circuits (ICs) that perform equivalent functions. The design applies to any such IC in which output signal charges from the pixels in a given row are transferred simultaneously into sampling capacitors at the bottoms of the columns, then voltages representing individual pixel charges are read out in sequence by sequentially turning on column-selecting field-effect transistors (FETs) in synchronism with source-follower- or operational-amplifier-based amplifier circuits. The improved design affords the best features of prior source-follower-and operational- amplifier-based designs while overcoming the major limitations of those designs. The limitations can be summarized as follows: a) For a source-follower-based signal chain, the ohmic voltage drop associated with DC bias current flowing through the column-selection FET causes unacceptable voltage offset, nonlinearity, and reduced small-signal gain. b) For an operational-amplifier-based signal chain, the required bias current and the output noise increase superlinearly with size of the pixel array because of a corresponding increase in the effective capacitance of the row bus used to couple the sampled column charges to the operational amplifier. The effect of the bus capacitance is to simultaneously slow down the readout circuit and increase noise through the Miller effect.

  10. Simple voltage-controlled current source for wideband electrical bioimpedance spectroscopy: circuit dependences and limitations

    NASA Astrophysics Data System (ADS)

    Seoane, F.; Macías, R.; Bragós, R.; Lindecrantz, K.

    2011-11-01

    In this work, the single Op-Amp with load-in-the-loop topology as a current source is revisited. This circuit topology was already used as a voltage-controlled current source (VCCS) in the 1960s but was left unused when the requirements for higher frequency arose among the applications of electrical bioimpedance (EBI). The aim of the authors is not only limited to show that with the currently available electronic devices it is perfectly viable to use this simple VCCS topology as a working current source for wideband spectroscopy applications of EBI, but also to identify the limitations and the role of each of the circuit components in the most important parameter of a current for wideband applications: the output impedance. The study includes the eventual presence of a stray capacitance and also an original enhancement, driving with current the VCCS. Based on the theoretical analysis and experimental measurements, an accurate model of the output impedance is provided, explaining the role of the main constitutive elements of the circuit in the source's output impedance. Using the topologies presented in this work and the proposed model, any electronic designer can easily implement a simple and efficient current source for wideband EBI spectroscopy applications, e.g. in this study, values above 150 kΩ at 1 MHz have been obtained, which to the knowledge of the authors are the largest values experimentally measured and reported for a current source in EBI at this frequency.

  11. Discontinuity interaction and anomalous source models in through transmission eddy current testing

    SciTech Connect

    Mergelas, B.J.; Atherton, D.L.

    1996-01-01

    Growing interest in the detection of external, axially aligned stress corrosion cracks in ferromagnetic oil and gas transmission pipelines, has prompted a detailed investigation of discontinuity interactions in remote field eddy current (RFEC) testing. Experimental measurements and numerical modeling were undertaken to study discontinuity interactions in a single through-wall transmission geometry for ferromagnetic and nonferromagnetic pipes. Anomalous source models have been introduced in order to explain the responses of axial discontinuities to circumferential eddy currents or circumferential AC magnetic fields. In nonferromagnetic material, discontinuity responses may be modeled by two types of anomalous eddy current sources. In ferromagnetic materials, an anomalous magnetization source is useful for explaining discontinuity response.

  12. Relationship between IBICC imaging and SEU in CMOS ICs

    SciTech Connect

    Sexton, F.W.; Horn, K.M.; Doyle, B.L.; Laird, J.S.; Cholewa, M.; Saint, A.; Legge, G.J.F.

    1993-03-01

    Ion-beam-induced charge-collection (IBICC) images of the TA670 16K-bit CMOS SRAM are analyzed and compared to previous SEU images. Enhanced charge collection was observed in the n-source/drains regions consistent with bipolar amplification or shunting.

  13. Relationship between IBICC imaging and SEU in CMOS ICs

    SciTech Connect

    Sexton, F.W.; Horn, K.M.; Doyle, B.L. ); Laird, J.S.; Cholewa, M.; Saint, A.; Legge, G.J.F. )

    1993-01-01

    Ion-beam-induced charge-collection (IBICC) images of the TA670 16K-bit CMOS SRAM are analyzed and compared to previous SEU images. Enhanced charge collection was observed in the n-source/drains regions consistent with bipolar amplification or shunting.

  14. High current Cu3P liquid metal ion source using a novel extractor configuration

    NASA Astrophysics Data System (ADS)

    Higuchi-Rusli, R. H.; Corelli, J. C.

    1987-12-01

    It has been found that by utilizing a sharp needle for the extractor electrode in close proximity to the source tip wetted with Cu3P liquid alloy, a large increase (factor ˜300) in ion current is observed in comparison to standard liquid metal ion sources (LMIS's). In standard previously used LMIS's the extractor electrode was a flat plane with a circular hole centered on the source needle tip. This new high current source has important applications in focused and broad ion beam deposition systems.

  15. Simulation of dark current and dark current-induced background photons in the Thomson scattering X-ray source

    NASA Astrophysics Data System (ADS)

    Zheng, Lianmin; Du, Yingchao; Huang, Wenhui; Tang, Chuanxiang

    2015-11-01

    A model of dark current generation in the photocathode radio-frequency (RF) gun is established in the Thomson scattering X-ray source, and dark current transport and losses along the beamline are simulated. A velocity bunching cavity is added between the RF gun and the first linac to achieve the longitudinal compression of the photoelectron bunches. Given the longitudinal acceleration and the transverse focusing of the bunching cavity, the dark current electrons with bunching are approximately three times more than those without bunching, and this condition aggravates the harm to the operation of the photoinjector. Numerous dark current electrons around the electron-laser interaction section hit against the pipe inner wall and two laser focusing mirrors, producing a large number of background photons. A simulation of the bremsstrahlung process using an MCNP code is presented, showing that the background photon yield is less than 2.1% of the scattering photon yield, which is acceptable for our application.

  16. Large-area low-temperature ultrananocrystaline diamond (UNCD) films and integration with CMOS devices for monolithically integrated diamond MEMD/NEMS-CMOS systems.

    SciTech Connect

    Sumant, A.V.; Auciello, O.; Yuan, H.-C; Ma, Z.; Carpick, R. W.; Mancini, D. C.; Univ. of Wisconsin; Univ. of Pennsylvania

    2009-05-01

    Because of exceptional mechanical, chemical, and tribological properties, diamond has a great potential to be used as a material for the development of high-performance MEMS and NEMS such as resonators and switches compatible with harsh environments, which involve mechanical motion and intermittent contact. Integration of such MEMS/NEMS devices with complementary metal oxide semiconductor (CMOS) microelectronics will provide a unique platform for CMOS-driven commercial MEMS/NEMS. The main hurdle to achieve diamond-CMOS integration is the relatively high substrate temperatures (600-800 C) required for depositing conventional diamond thin films, which are well above the CMOS operating thermal budget (400 C). Additionally, a materials integration strategy has to be developed to enable diamond-CMOS integration. Ultrananocrystalline diamond (UNCD), a novel material developed in thin film form at Argonne, is currently the only microwave plasma chemical vapor deposition (MPCVD) grown diamond film that can be grown at 400 C, and still retain exceptional mechanical, chemical, and tribological properties comparable to that of single crystal diamond. We have developed a process based on MPCVD to synthesize UNCD films on up to 200 mm in diameter CMOS wafers, which will open new avenues for the fabrication of monolithically integrated CMOS-driven MEMS/NEMS based on UNCD. UNCD films were grown successfully on individual Si-based CMOS chips and on 200 mm CMOS wafers at 400 C in a MPCVD system, using Ar-rich/CH4 gas mixture. The CMOS devices on the wafers were characterized before and after UNCD deposition. All devices were performing to specifications with very small degradation after UNCD deposition and processing. A threshold voltage degradation in the range of 0.08-0.44V and transconductance degradation in the range of 1.5-9% were observed.

  17. Letter Report on 500 nA Pulsed Current from Field Ionization Source

    SciTech Connect

    Ellsworth, Jennifer L.

    2013-12-12

    We recently produced a milestone 500 nA of pulsed current using 40 Ir field ionizer electrodes in our ion source. In conclusion, we have produced the milestone pulsed current of 500 nA using 40 electrochemically etched iridium tips in a field ionization source. The pulsed current output is repeatable and scales as expected with gas fill pressure and bias voltage. We expect these current will be sufficient to produce neutral yields of 1∙107 DT n/s.

  18. Four-dimensional ultrasound current source density imaging of a dipole field

    NASA Astrophysics Data System (ADS)

    Wang, Z. H.; Olafsson, R.; Ingram, P.; Li, Q.; Qin, Y.; Witte, R. S.

    2011-09-01

    Ultrasound current source density imaging (UCSDI) potentially transforms conventional electrical mapping of excitable organs, such as the brain and heart. For this study, we demonstrate volume imaging of a time-varying current field by scanning a focused ultrasound beam and detecting the acoustoelectric (AE) interaction signal. A pair of electrodes produced an alternating current distribution in a special imaging chamber filled with a 0.9% NaCl solution. A pulsed 1 MHz ultrasound beam was scanned near the source and sink, while the AE signal was detected on remote recording electrodes, resulting in time-lapsed volume movies of the alternating current distribution.

  19. Large area CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Turchetta, R.; Guerrini, N.; Sedgwick, I.

    2011-01-01

    CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

  20. Measurements of Si hybrid CMOS x-ray detector characteristics

    NASA Astrophysics Data System (ADS)

    Bongiorno, Stephen D.; Falcone, Abraham D.; Burrows, David N.; Cook, Robert

    2010-07-01

    The recent development of active pixel sensors as X-Ray focal plane arrays will place them in contention with CCDs on future satellite missions. Penn State University (PSU) is working with Teledyne Imaging Sensors (TIS) to develop X-Ray Hybrid CMOS devices (HCDs), a type of active pixel sensor with fast frame rates, adaptable readout timing and geometry, low power consumption, and inherent radiation hardness. CCDs have been used with great success on the current generation of X-Ray telescopes (e.g. Chandra, XMM, Suzaku, and Swift). However, their bucket-brigade readout architecture, which transfers charge across the chip with discrete component readout electronics, results in clockrate limited readout speeds that cause pileup (saturation) of bright sources and an inherent susceptibility to radiation induced displacement damage that limits mission lifetime. In contrast, HCDs read pixels through the detector substrate with low power, on-chip readout integrated circuits. Faster frame rates, achieved with adaptable readout timing and geometry, will allow the next generation's larger effective area telescopes to observe brighter sources free of pileup. In HCDs, radiation damaged lattice sites affect a single pixel instead of an entire row. The PSU X-ray group is currently testing 4 Teledyne HCDs, with low cross-talk CTIA devices in development. We will report laboratory measurements of HCD readnoise, interpixel-capacitance and its impact on event selection, linearity, and energy resolution as a function of energy.

  1. Operation and biasing for single device equivalent to CMOS

    DOEpatents

    Welch, James D.

    2001-01-01

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  2. Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS

    NASA Astrophysics Data System (ADS)

    Takagi, Shin-ichi; Mizuno, Tomohisa; Tezuka, Tsutomu; Sugiyama, Naoharu; Numata, Toshinori; Usuda, Koji; Moriyama, Yoshihiko; Nakaharai, Shu; Koga, Junji; Tanabe, Akihito; Maeda, Tatsuro

    2004-03-01

    Strained-Si-on-insulator (strained-SOI) CMOS is a promising device structure for satisfying requirements of both high current drive and low supply voltage under sub-100 nm nodes, because of the combination of advantages of SOI MOSFETs and high mobility strained-Si channels. In this paper, we present the concept, the device structures and the fabrication techniques of strained-SOI CMOS. We introduce our original fabrication method of strained-SOI substrates, called the Ge condensation technique. It is experimentally shown that strained-SOI CMOS has higher electron and hole mobility and that strained-SOI CMOS ring oscillators successfully operate with the performance enhancement of 30-70% against conventional SOI CMOS ones.

  3. The total dose effects on the 1/f noise of deep submicron CMOS transistors

    NASA Astrophysics Data System (ADS)

    Rongbin, Hu; Yuxin, Wang; Wu, Lu

    2014-02-01

    Using 0.18 μm CMOS transistors, the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO2 layers, which induces a current leakage passage, increasing the 1/f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion.

  4. Current knowledge of US metal and nonmetal miner health: Current and potential data sources for analysis of miner health status

    PubMed Central

    Yeoman, K. M.; Halldin, C. N.; Wood, J.; Storey, E.; Johns, D.; Laney, A. S.

    2016-01-01

    ABSTRACT Little is known about the current health status of US metal and nonmetal (MNM) miners, in part because no health surveillance systems exist for this population. The National Institute for Occupational Safety and Health (NIOSH) is developing a program to characterize burden of disease among MNM miners. This report discusses current knowledge and potential data sources of MNM miner health. Recent national surveys were analyzed, and literature specific to MNM miner health status was reviewed. No robust estimates of disease prevalence were identified, and national surveys did not provide information specific to MNM miners. Because substantial gaps exist in the understanding of MNM miners' current health status, NIOSH plans to develop a health surveillance program for this population to guide intervention efforts to reduce occupational and personal risks for chronic illness. PMID:25658684

  5. A linearly controlled direct-current power source for high-current inductive loads in a magnetic suspension wind tunnel

    NASA Technical Reports Server (NTRS)

    Tripp, John S.; Daniels, Taumi S.

    1990-01-01

    The NASA Langley 6 inch magnetic suspension and balance system (MSBS) requires an independently controlled bidirectional DC power source for each of six positioning electromagnets. These electromagnets provide five-degree-of-freedom control over a suspended aerodynamic test model. Existing power equipment, which employs resistance coupled thyratron controlled rectifiers as well as AC to DC motor generator converters, is obsolete, inefficient, and unreliable. A replacement six phase bidirectional controlled bridge rectifier is proposed, which employs power MOSFET switches sequenced by hybrid analog/digital circuits. Full load efficiency is 80 percent compared to 25 percent for the resistance coupled thyratron system. Current feedback provides high control linearity, adjustable current limiting, and current overload protection. A quenching circuit suppresses inductive voltage impulses. It is shown that 20 kHz interference from positioning magnet power into MSBS electromagnetic model position sensors results predominantly from capacitively coupled electric fields. Hence, proper shielding and grounding techniques are necessary. Inductively coupled magnetic interference is negligible.

  6. CMOS Integrated Carbon Nanotube Sensor

    SciTech Connect

    Perez, M. S.; Lerner, B.; Boselli, A.; Lamagna, A.; Obregon, P. D. Pareja; Julian, P. M.; Mandolesi, P. S.; Buffa, F. A.

    2009-05-23

    Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

  7. Spin current source based on a quantum point contact with local spin-orbit interaction

    SciTech Connect

    Nowak, M. P.; Szafran, B.

    2013-11-11

    Proposal for construction of a source of spin-polarized current based on quantum point contact (QPC) with local spin-orbit interaction is presented. We show that spin-orbit interaction present within the narrowing acts like a spin filter. The spin polarization of the current is discussed as a function of the Fermi energy and the width of the QPC.

  8. Monolithic CMOS imaging x-ray spectrometers

    NASA Astrophysics Data System (ADS)

    Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

    2014-07-01

    The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and

  9. Current Source Based on H-Bridge Inverter with Output LCL Filter

    NASA Astrophysics Data System (ADS)

    Blahnik, Vojtech; Talla, Jakub; Peroutka, Zdenek

    2015-09-01

    The paper deals with a control of current source with an LCL output filter. The controlled current source is realized as a single-phase inverter and output LCL filter provides low ripple of output current. However, systems incorporating LCL filters require more complex control strategies and there are several interesting approaches to the control of this type of converter. This paper presents the inverter control algorithm, which combines model based control with a direct current control based on resonant controllers and single-phase vector control. The primary goal is to reduce the current ripple and distortion under required limits and provides fast and precise control of output current. The proposed control technique is verified by measurements on the laboratory model.

  10. Progress and future developments of high current ion source for neutral beam injector in the ASIPP

    SciTech Connect

    Hu, Chundong; Xie, Yahong Xie, Yuanlai; Liu, Sheng; Liu, Zhimin; Xu, Yongjian; Liang, Lizhen; Sheng, Peng; Jiang, Caichao

    2015-04-08

    A high current hot cathode bucket ion source, which based on the US long pulse ion source is developed in Institute of Plasma Physics, Chinese Academy of Sciences. The ion source consists of a bucket plasma generator with multi-pole cusp fields and a set of tetrode accelerator with slit apertures. So far, four ion sources are developed and conditioned on the ion source test bed. 4 MW hydrogen beam with beam energy of 80 keV is extracted. In Aug. 2013, EAST NBI 1 with two ion source installed on the EAST, and achieved H-mode plasma with NBI injection for the first time. In order to achieve stable long pulse operation of high current ion source and negative ion source research, the RF ion source with 200 mm diameter and 120 mm depth driver is designed and developed. The first RF plasma generated with 2 kW power of 1 MHz frequency. More of the RF plasma tests and negative source relative research need to do in the future.

  11. A BiCMOS integrated charge to amplitude converter

    SciTech Connect

    Gallin-Martel, L.; Pouxe, J.; Rossetto, O.

    1996-12-31

    This paper describes a fast two channel gated charge to amplitude converter (QAC) which has been designed with the 1.2 {mu}m BiCMOS technology from AMS (Austria Mikro Systeme). It can integrate fast negative impulse currents up to 100 mA. Associated with an audio 18 bit low cost ADC, it can easily be used to make a 12 to 13 bit QDC. The problems of current to current conversion, pedestal and offset stability are discussed.

  12. A Fast Greedy Sparse Method of Current Sources Reconstruction for Ventricular Torsion Detection

    NASA Astrophysics Data System (ADS)

    Bing, Lu; Jiang, Shiqin; Chen, Mengpei; Zhao, Chen; Grönemeyer, D.; Hailer, B.; Van Leeuwen, P.

    2015-09-01

    A fast greedy sparse (FGS) method of cardiac equivalent current sources reconstruction is developed for non-invasive detection and quantitative analysis of individual left ventricular torsion. The cardiac magnetic field inverse problem is solved based on a distributed source model. The analysis of real 61-channel magnetocardiogram (MCG) data demonstrates that one or two dominant current source with larger strength can be identified efficiently by the FGS algorithm. Then, the left ventricle torsion during systole is examined on the basis of x, y and z coordination curves and angle change of reconstructed dominant current sources. The advantages of this method are non-invasive, visible, with higher sensitivity and resolution. It may enable the clinical detection of cardiac systolic and ejection dysfunction.

  13. Current Situation for Management of Disused Sealed Radioactive Sources in Japan - 13025

    SciTech Connect

    Kusama, Keiji; Miyamoto, Yoichi

    2013-07-01

    As for the Sealed Radioactive Source currently used in Japan, many of them are imported from overseas. The U.S., Canada, Germany, the Netherlands, Belgium and Czech Republic are the main exporting States. Many of disused sealed radioactive sources are being returned to exporting States. The sealed radioactive sources which cannot be returned to exporting States are appropriately kept in the domestic storage facility. So, there are not main problem on the long term management of disused sealed radioactive sources in Japan. However, there are some difficulties on repatriate. One is reservation of a means of transport. The sea mail which conveys radioactive sources owing to reduction of movement of international cargo is decreasing in number. And there is a denial of shipment. Other one is that the manufacturer has already resigned from the work and cannot return disused sealed radioactive sources, or a manufacturer cannot specify and disused sources cannot be returned. The disused sealed radioactive source which cannot be repatriated is a little in term of radioactivity. As for the establishment of national measure of final disposal facility for disused sealed radioactive sources, in Japan, it is not yet installed with difficulty. Since there are many countries for which installation of a final disposal facility for disused sealed radioactive sources is difficult, the source manufacture country should respond positively to return the source which was manufactured and sold in the past. (authors)

  14. RAMPING UP THE SNS BEAM CURRENT WITH THE LBNL BASELINE H- SOURCE

    SciTech Connect

    Stockli, Martin P; Han, Baoxi; Murray Jr, S N; Newland, Denny J; Pennisi, Terry R; Santana, Manuel; Welton, Robert F

    2009-01-01

    Over the last two years the Spallation Neutron Source (SNS) has ramped up the repetition rate, pulse length, and the beam current to reach 540 kW, which has challenged many subsystems including the H- source designed and built by Lawrence Berkeley National Laboratory (LBNL). This paper discusses the major modifications of the H- source implemented to consistently and routinely output the beam current required by the SNS beam power ramp up plan. At this time, 32 mA LINAC beam current are routinely produced, which meets the requirement for 690 kW planned for end of 2008. In June 2008, a 14-day production run used 37 mA, which is close to the 38 mA required for 1.44 MW. A medium energy beam transport (MEBT) beam current of 46 mA was demonstrated on September 2, 2008.

  15. The differential Howland current source with high signal to noise ratio for bioimpedance measurement system

    SciTech Connect

    Liu, Jinzhen; Li, Gang; Lin, Ling; Qiao, Xiaoyan; Wang, Mengjun; Zhang, Weibo

    2014-05-15

    The stability and signal to noise ratio (SNR) of the current source circuit are the important factors contributing to enhance the accuracy and sensitivity in bioimpedance measurement system. In this paper we propose a new differential Howland topology current source and evaluate its output characters by simulation and actual measurement. The results include (1) the output current and impedance in high frequencies are stabilized after compensation methods. And the stability of output current in the differential current source circuit (DCSC) is 0.2%. (2) The output impedance of two current circuits below the frequency of 200 KHz is above 1 MΩ, and below 1 MHz the output impedance can arrive to 200 KΩ. Then in total the output impedance of the DCSC is higher than that of the Howland current source circuit (HCSC). (3) The SNR of the DCSC are 85.64 dB and 65 dB in the simulation and actual measurement with 10 KHz, which illustrates that the DCSC effectively eliminates the common mode interference. (4) The maximum load in the DCSC is twice as much as that of the HCSC. Lastly a two-dimensional phantom electrical impedance tomography is well reconstructed with the proposed HCSC. Therefore, the measured performance shows that the DCSC can significantly improve the output impedance, the stability, the maximum load, and the SNR of the measurement system.

  16. Representation of bioelectric current sources using Whitney elements in the finite element method.

    PubMed

    Tanzer, I Oğuz; Järvenpää, Seppo; Nenonen, Jukka; Somersalo, Erkki

    2005-07-01

    Bioelectric current sources of magneto- and electroencephalograms (MEG, EEG) are usually modelled with discrete delta-function type current dipoles, despite the fact that the currents in the brain are naturally continuous throughout the neuronal tissue. In this study, we represent bioelectric current sources in terms of Whitney-type elements in the finite element method (FEM) using a tetrahedral mesh. The aim is to study how well the Whitney elements can reproduce the potential and magnetic field patterns generated by a point current dipole in a homogeneous conducting sphere. The electric potential is solved for a unit sphere model with isotropic conductivity and magnetic fields are calculated for points located on a cap outside the sphere. The computed potential and magnetic field are compared with analytical solutions for a current dipole. Relative difference measures between the FEM and analytical solutions are less than 1%, suggesting that Whitney elements as bioelectric current sources are able to produce the same potential and magnetic field patterns as the point dipole sources. PMID:15972978

  17. Representation of bioelectric current sources using Whitney elements in the finite element method

    NASA Astrophysics Data System (ADS)

    Oguz Tanzer, I.; Järvenpää, Seppo; Nenonen, Jukka; Somersalo, Erkki

    2005-07-01

    Bioelectric current sources of magneto- and electroencephalograms (MEG, EEG) are usually modelled with discrete delta-function type current dipoles, despite the fact that the currents in the brain are naturally continuous throughout the neuronal tissue. In this study, we represent bioelectric current sources in terms of Whitney-type elements in the finite element method (FEM) using a tetrahedral mesh. The aim is to study how well the Whitney elements can reproduce the potential and magnetic field patterns generated by a point current dipole in a homogeneous conducting sphere. The electric potential is solved for a unit sphere model with isotropic conductivity and magnetic fields are calculated for points located on a cap outside the sphere. The computed potential and magnetic field are compared with analytical solutions for a current dipole. Relative difference measures between the FEM and analytical solutions are less than 1%, suggesting that Whitney elements as bioelectric current sources are able to produce the same potential and magnetic field patterns as the point dipole sources.

  18. The differential Howland current source with high signal to noise ratio for bioimpedance measurement system

    NASA Astrophysics Data System (ADS)

    Liu, Jinzhen; Qiao, Xiaoyan; Wang, Mengjun; Zhang, Weibo; Li, Gang; Lin, Ling

    2014-05-01

    The stability and signal to noise ratio (SNR) of the current source circuit are the important factors contributing to enhance the accuracy and sensitivity in bioimpedance measurement system. In this paper we propose a new differential Howland topology current source and evaluate its output characters by simulation and actual measurement. The results include (1) the output current and impedance in high frequencies are stabilized after compensation methods. And the stability of output current in the differential current source circuit (DCSC) is 0.2%. (2) The output impedance of two current circuits below the frequency of 200 KHz is above 1 MΩ, and below 1 MHz the output impedance can arrive to 200 KΩ. Then in total the output impedance of the DCSC is higher than that of the Howland current source circuit (HCSC). (3) The SNR of the DCSC are 85.64 dB and 65 dB in the simulation and actual measurement with 10 KHz, which illustrates that the DCSC effectively eliminates the common mode interference. (4) The maximum load in the DCSC is twice as much as that of the HCSC. Lastly a two-dimensional phantom electrical impedance tomography is well reconstructed with the proposed HCSC. Therefore, the measured performance shows that the DCSC can significantly improve the output impedance, the stability, the maximum load, and the SNR of the measurement system.

  19. Measuring the X-ray quantum efficiency of a hybrid CMOS detector with 55Fe

    NASA Astrophysics Data System (ADS)

    Bongiorno, S. D.; Falcone, A. D.; Prieskorn, Z.; Griffith, C.; Burrows, D. N.

    2015-06-01

    Charge coupled devices (CCDs) are currently the workhorse focal plane arrays operating aboard many orbiting astrophysics X-ray telescopes, e.g. Chandra, XMM-Newton, Swift, and Suzaku. In order to meet the count rate, power, and mission duration requirements defined by next-generation X-ray telescopes, future detectors will need to be read out faster, consume less power, and be more resistant to radiation and micrometeoroid damage than current-generation devices. The hybrid CMOS detector (HCD), a type of active pixel sensor, is currently being developed to meet these requirements. With a design architecture that involves bump bonding two semiconductor substrates together at the pixel level, these devices exhibit both the high read speed and low power consumption of CMOS readout circuitry and the high quantum efficiency (QE) of a deeply depleted silicon absorber. These devices are expected to exhibit the same excellent, high-energy quantum efficiency (QE) as deep-depletion CCDs (QE > 0.9 at 6 keV), while at the same time exhibiting superior readout flexibility, power consumption, and radiation hardness than CCDs. In this work we present a QE model for a Teledyne Imaging Sensors HyViSI HCD, which predicts QE=96% at 55Fe source energies (5.89 and 6.49 keV). We then present a QE measurement of the modeled device at the same energies, which shows QE=97±5% and is in good agreement with the model.

  20. Challenges of nickel silicidation in CMOS technologies

    SciTech Connect

    Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet; Baumann, Frieder; Klymko, Nancy; Nummy, Karen; Sun, Bing; Jordan-Sweet, Jean; Yu, Jian; Zhu, Frank; Narasimha, Shreesh; Chudzik, Michael

    2015-04-01

    In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.

  1. Modulated CMOS camera for fluorescence lifetime microscopy.

    PubMed

    Chen, Hongtao; Holst, Gerhard; Gratton, Enrico

    2015-12-01

    Widefield frequency-domain fluorescence lifetime imaging microscopy (FD-FLIM) is a fast and accurate method to measure the fluorescence lifetime of entire images. However, the complexity and high costs involved in construction of such a system limit the extensive use of this technique. PCO AG recently released the first luminescence lifetime imaging camera based on a high frequency modulated CMOS image sensor, QMFLIM2. Here we tested and provide operational procedures to calibrate the camera and to improve the accuracy using corrections necessary for image analysis. With its flexible input/output options, we are able to use a modulated laser diode or a 20 MHz pulsed white supercontinuum laser as the light source. The output of the camera consists of a stack of modulated images that can be analyzed by the SimFCS software using the phasor approach. The nonuniform system response across the image sensor must be calibrated at the pixel level. This pixel calibration is crucial and needed for every camera settings, e.g. modulation frequency and exposure time. A significant dependency of the modulation signal on the intensity was also observed and hence an additional calibration is needed for each pixel depending on the pixel intensity level. These corrections are important not only for the fundamental frequency, but also for the higher harmonics when using the pulsed supercontinuum laser. With these post data acquisition corrections, the PCO CMOS-FLIM camera can be used for various biomedical applications requiring a large frame and high speed acquisition. PMID:26500051

  2. A HIGH CURRENT DENSITY LI+ ALUMINO-SILICATE ION SOURCE FOR TARGET HEATING EXPERIMENTS

    SciTech Connect

    Roy, Prabir K.; Greenway, Wayne G.; Kwan, Joe W.; Seidl, Peter A.; Waldron, William L.

    2011-03-23

    The NDCX-II accelerator for target heating experiments has been designed to use a large diameter ({approx_equal} 10.9 cm) Li{sup +} doped alumino-silicate source with a pulse duration of 0.5 {micro}s, and beam current of {approx_equal} 93 mA. Characterization of a prototype lithium alumino-silicate sources is presented. Using 6.35mm diameter prototype emitters (coated on a {approx_equal} 75% porous tungsten substrate), at a temperature of {approx_equal} 1275 C, a space-charge limited Li{sup +} beam current density of {approx_equal} 1 mA/cm{sup 2} was measured. At higher extraction voltage, the source is emission limited at around {approx_equal} 1.5 mA/cm{sup 2}, weakly dependent on the applied voltage. The lifetime of the ion source is {approx_equal} 50 hours while pulsing the extraction voltage at 2 to 3 times per minute. Measurements show that the life time of the ion source does not depend only on beam current extraction, and lithium loss may be dominated by neutral loss or by evaporation. The life time of a source is around {ge} 10 hours in a DC mode extraction, and the extracted charge is {approx_equal} 75% of the available Li in the sample. It is inferred that pulsed heating may increase the life time of a source.

  3. Circuit design for nuclear radiation test of CMOS multiplier chips

    SciTech Connect

    Lim, T.S.; Martin, R.L.; Hughes, H.L.

    1986-09-01

    This paper describes the design of a microprocessor-based electronic circuit to be used in testing the effects of nuclear radiation on a CMOS 8 x 8 multiplier chip. Knowledge of such effects is important for military and space applications of integrated circuits. The multiplier chip undergoing testing is attached to a DUT (device under test) board which is enclosed in a metal container. The container is then lowered to the cobalt 60 radiation source located at the bottom of a 15-ft-deep pool. The gamma-ray radiation test setup is schematically shown. The in-source test board containing the multiplier chip is attached to an 8085-based, single-board microcomputer (SDK-85) by a 30-ft multiconductor cable. Doses of gamma-ray radiation from cobalt 60 are applied in steps at increasing quantities until the multiplier chip, which is tested between doses, begins to malfunction. An 8085 assembly language program is used for functional test of the multiplier. The leakage current and the propagation delay time are also measured between doses.

  4. INDEP approach for leakage reduction in nanoscale CMOS circuits

    NASA Astrophysics Data System (ADS)

    Sharma, Vijay Kumar; Pattanaik, Manisha; Raj, Balwinder

    2015-02-01

    Complementary metal oxide semiconductor (CMOS) technology scaling for improving speed and functionality turns leakage power one of the major concerns for nanoscale circuits design. The minimization of leakage power is a rising challenge for the design of the existing and future nanoscale CMOS circuits. This paper presents a novel, input-dependent, transistor-level, low leakage and reliable INput DEPendent (INDEP) approach for nanoscale CMOS circuits. INDEP approach is based on Boolean logic calculations for the input signals of the extra inserted transistors within the logic circuit. The gate terminals of extra inserted transistors depend on the primary input combinations of the logic circuits. The appropriate selection of input gate voltages of INDEP transistors are reducing the leakage current efficiently along with rail to rail output voltage swing. The important characteristic of INDEP approach is that it works well in both active as well as standby modes of the circuits. This approach overcomes the limitations created by the prevalent current leakage reduction techniques. The simulation results indicate that INDEP approach mitigates 41.6% and 35% leakage power for 1-bit full adder and ISCAS-85 c17 benchmark circuit, respectively, at 32 nm bulk CMOS technology node.

  5. Current source imaging for high spatial resolution magnetocardiography in normal and abnormal rat cardiac muscles

    NASA Astrophysics Data System (ADS)

    Uchida, S.; Iramina, K.; Goto, K.; Ueno, S.

    2000-05-01

    The purpose of our study was to identify the current source produced by acute ischemia and infarction. We measured magnetocardiograms (MCG) and electrocardiograms (ECG) of five male rats using a high-resolution dc superconducting quantum interference device gradiometer in a magnetically shielded room after performing coronary artery occlusion. The spatial resolution of the detecting magnetic field of our system is higher than the typical system, thus permitting the measurement of magnetic fields in small animals. Distribution of the magnetic fields B(t) and distribution of |rot B(t)|, which corresponded to the distribution of the current source, were imaged by 12-channel MCGs. As a result, the distribution of current source changes in the affected area of the myocardium during the ST segment, and amplitude of the peak significantly increased after occlusion. Our system can be used to help clarify the mechanism of the ST shift related to severe heart disease.

  6. Cortical network dynamics during source memory retrieval: current density imaging with individual MRI.

    PubMed

    Kim, Young Youn; Roh, Ah Young; Namgoong, Yoon; Jo, Hang Joon; Lee, Jong-Min; Kwon, Jun Soo

    2009-01-01

    We investigated the neural correlates of source memory retrieval using low-resolution electromagnetic tomography (LORETA) with 64 channels EEG and individual MRI as a realistic head model. Event-related potentials (ERPs) were recorded while 13 healthy subjects performed the source memory task for the voice of the speaker in spoken words. The source correct condition of old words elicited more positive-going potentials than the correct rejection condition of new words at 400-700 ms post-stimulus and the old/new effects also appeared in the right anterior region between 1,000 and 1,200 ms. We conducted source reconstruction at mean latencies of 311, 604, 793, and 1,100 ms and used statistical parametric mapping for the statistical analysis. The results of source analysis suggest that the activation of the right inferior parietal region may reflect retrieval of source information. The source elicited by the difference ERPs between the source correct and source incorrect conditions exhibited dynamic change of current density activation in the overall cortices with time during source memory retrieval. These results indicate that multiple neural systems may underlie the ability to recollect context. PMID:17979123

  7. Beam extraction and high stability operation of high current electron cyclotron resonance proton ion source

    SciTech Connect

    Roychowdhury, P. Mishra, L.; Kewlani, H.; Mittal, K. C.; Patil, D. S.

    2014-03-15

    A high current electron cyclotron resonance proton ion source is designed and developed for the low energy high intensity proton accelerator at Bhabha Atomic Research Centre. The plasma discharge in the ion source is stabilized by minimizing the reflected microwave power using four stub auto tuner and magnetic field. The optimization of extraction geometry is performed using PBGUNS code by varying the aperture, shape, accelerating gap, and the potential on the electrodes. While operating the source, it was found that the two layered microwave window (6 mm quartz plate and 2 mm boron nitride plate) was damaged (a fine hole was drilled) by the back-streaming electrons after continuous operation of the source for 3 h at beam current of 20–40 mA. The microwave window was then shifted from the line of sight of the back-streaming electrons and located after the water-cooled H-plane bend. In this configuration the stable operation of the high current ion source for several hours is achieved. The ion beam is extracted from the source by biasing plasma electrode, puller electrode, and ground electrode to +10 to +50 kV, −2 to −4 kV, and 0 kV, respectively. The total ion beam current of 30–40 mA is recorded on Faraday cup at 40 keV of beam energy at 600–1000 W of microwave power, 800–1000 G axial magnetic field and (1.2–3.9) × 10{sup −3} mbar of neutral hydrogen gas pressure in the plasma chamber. The dependence of beam current on extraction voltage, microwave power, and gas pressure is investigated in the range of operation of the ion source.

  8. An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

    PubMed Central

    Shokrani, Mohammad Reza; Hamidon, Mohd Nizar B.; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology. PMID:24782680

  9. An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

    PubMed

    Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology. PMID:24782680

  10. The magnetospheric disturbance ring current as a source for probing the deep earth electrical conductivity

    USGS Publications Warehouse

    Campbell, W.H.

    1990-01-01

    Two current rings have been observed in the equatorial plane of the earth at times of high geomagnetic activity. An eastward current exists between about 2 and 3.5 earth radii (Re) distant, and a larger, more variable companion current exists between about 4 and 9 Re. These current regions are loaded during geomagnetic substorms. They decay, almost exponentially, after the cessation of the particle influx that attends the solar wind disturbance. This review focuses upon characteristics needed for intelligent use of the ring current as a source for induction probing of the earth's mantle. Considerable difficulties are found with the assumption that Dst is a ring-current index. ?? 1990 Birkha??user Verlag.

  11. Influence of the electron source distribution on field-aligned currents

    NASA Astrophysics Data System (ADS)

    Bruening, K.; Goertz, C. K.

    1985-01-01

    The field-aligned current density above a discrete auroral arc has been deduced from the downward electron flux and magnetic field measurements onboard the rocket Porcupine flight 4. Both measurements show that the field-aligned current density is, in spite of decreasing peak energies towards the edge of the arc, about 4 times higher there than in the center of the arc. This can be explained by using the single particle description for an anisotropic electron source distribution.

  12. A Current Source Method For t(sub q) Measurement of Fast Switching Thyristors

    NASA Technical Reports Server (NTRS)

    Niedra, Janis M.

    2006-01-01

    A current source driven circuit has been constructed to measure the turn-off time (t(sub q)) of fast-switching SiC thyristors. This circuit operates from a single power supply and a dual channel pulse generator to provide adjustment of forward current, magnitude and duration of reverse applied voltage, and rate of rise of reapplied forward voltage. Values of t(sub q) down to 100 ns can be resolved.

  13. Evaluation of Mo-doped Ti salicide process for sub-0.18-μm CMOS

    NASA Astrophysics Data System (ADS)

    Chao, Chih-Ping; Kittl, Jorge A.; Hong, Qi-Zhong; Shiau, Wei-Tsun; Rodder, Mark; Chen, Ih-Chin

    1998-09-01

    For scaled CMOS technology with gate length down to sub-0.25 micrometer, the conventional Ti salicide suffers from high polygate sheet resistance (Rsheet) due to difficulty in the low resistivity C54 TiSi2 phase transition. To improve the sub 0.25 micrometer TiSi2 Rsheet, pre-amorphization implant (PAI) was added to achieve low Rsheet down to approximately 0.1 micrometer gate length, and PAI based TiSi2 has been the base-line salicide process for current 0.25 micrometer CMOS technology. However, various studies on sub 0.18 micrometer devices have shown that PAI process tends to induce additional S/D dopant diffusion and results in the series resistance (RSD) increase and drive current degradation, especially for pMOS transistors. On the other hand, Mo implant was found effective in enhancing the C54 TiSi2 formation for narrow lines and has the potential to realize a simplified TiSi2 process with one single thermal step. However, the Mo based Ti salicide is still relatively new to date, and a complete CMOS study is helpful in identifying the trade-offs for such a process. In this work, we present a detailed CMOS evaluation of Mo doped TiSi2 process. Two different Mo based processes are studied: (1) Mo implant into gate before gate pattern (Mo-A case). In this case, the source/drain (S/D) diffusion regions have minimal Mo doping. (2) Mo implant into gate and S/D regions right before the S/D anneal (Mo-B case). For both Mo-A and Mo-B processes, we also studied the effect of Mo doses and the difference between the conventional 2-step rapid thermal process (RTP), low-temperature formation plus Ti strip plus high-temperature anneal, and the 1-step RTP process, namely low-T formation plus Ti stripe, where the high-T anneal is skipped. The results of the Mo processes are compared with three other reference salicide processes: conventional TiSi2 without PAI (Conv.), TiSi2 with Ge or As PAI and the emerging CoSi2 technology. The following CMOS care-abouts are evaluated for

  14. Fast pulsed operation of a small non-radioactive electron source with continuous emission current control

    SciTech Connect

    Cochems, P.; Kirk, A. T.; Bunert, E.; Runge, M.; Goncalves, P.; Zimmermann, S.

    2015-06-15

    Non-radioactive electron sources are of great interest in any application requiring the emission of electrons at atmospheric pressure, as they offer better control over emission parameters than radioactive electron sources and are not subject to legal restrictions. Recently, we published a simple electron source consisting only of a vacuum housing, a filament, and a single control grid. In this paper, we present improved control electronics that utilize this control grid in order to focus and defocus the electron beam, thus pulsing the electron emission at atmospheric pressure. This allows short emission pulses and excellent stability of the emitted electron current due to continuous control, both during pulsed and continuous operations. As an application example, this electron source is coupled to an ion mobility spectrometer. Here, the pulsed electron source allows experiments on gas phase ion chemistry (e.g., ion generation and recombination kinetics) and can even remove the need for a traditional ion shutter.

  15. Fast pulsed operation of a small non-radioactive electron source with continuous emission current control

    NASA Astrophysics Data System (ADS)

    Cochems, P.; Kirk, A. T.; Bunert, E.; Runge, M.; Goncalves, P.; Zimmermann, S.

    2015-06-01

    Non-radioactive electron sources are of great interest in any application requiring the emission of electrons at atmospheric pressure, as they offer better control over emission parameters than radioactive electron sources and are not subject to legal restrictions. Recently, we published a simple electron source consisting only of a vacuum housing, a filament, and a single control grid. In this paper, we present improved control electronics that utilize this control grid in order to focus and defocus the electron beam, thus pulsing the electron emission at atmospheric pressure. This allows short emission pulses and excellent stability of the emitted electron current due to continuous control, both during pulsed and continuous operations. As an application example, this electron source is coupled to an ion mobility spectrometer. Here, the pulsed electron source allows experiments on gas phase ion chemistry (e.g., ion generation and recombination kinetics) and can even remove the need for a traditional ion shutter.

  16. Fast pulsed operation of a small non-radioactive electron source with continuous emission current control.

    PubMed

    Cochems, P; Kirk, A T; Bunert, E; Runge, M; Goncalves, P; Zimmermann, S

    2015-06-01

    Non-radioactive electron sources are of great interest in any application requiring the emission of electrons at atmospheric pressure, as they offer better control over emission parameters than radioactive electron sources and are not subject to legal restrictions. Recently, we published a simple electron source consisting only of a vacuum housing, a filament, and a single control grid. In this paper, we present improved control electronics that utilize this control grid in order to focus and defocus the electron beam, thus pulsing the electron emission at atmospheric pressure. This allows short emission pulses and excellent stability of the emitted electron current due to continuous control, both during pulsed and continuous operations. As an application example, this electron source is coupled to an ion mobility spectrometer. Here, the pulsed electron source allows experiments on gas phase ion chemistry (e.g., ion generation and recombination kinetics) and can even remove the need for a traditional ion shutter. PMID:26133868

  17. Steps toward fabricating cryogenic CMOS compatible single electron devices for future qubits.

    SciTech Connect

    Wendt, Joel Robert; Childs, Kenton David; Ten Eyck, Gregory A.; Tracy, Lisa A.; Eng, Kevin; Stevens, Jeffrey; Nordberg, Eric; Carroll, Malcolm S.; Lilly, Michael Patrick

    2008-08-01

    We describe the development of a novel silicon quantum bit (qubit) device architecture that involves using materials that are compatible with a Sandia National Laboratories (SNL) 0.35 mum complementary metal oxide semiconductor (CMOS) process intended to operate at 100 mK. We describe how the qubit structure can be integrated with CMOS electronics, which is believed to have advantages for critical functions like fast single electron electrometry for readout compared to current approaches using radio frequency techniques. Critical materials properties are reviewed and preliminary characterization of the SNL CMOS devices at 4.2 K is presented.

  18. Future directions for CMOS device technology development from a system application perspective

    NASA Astrophysics Data System (ADS)

    Ning, Tak H.

    2007-03-01

    The development of CMOS technology has been, and will remain, driven by system needs. Traditionally, these needs have been met quite satisfactorily by simply reducing the physical size of the transistors as guided by the MOSFET scaling theory and increasing the chip-level integration density as anticipated from "Moore's Law." Now that CMOS has reached its scaling limits, continued progress has to come from innovations beyond the traditional development paths, guided by anticipating and addressing system designers' concerns and needs. In this talk, we examine several opportunities for extending current CMOS technology to continue satisfying the needs of system designers.

  19. Ionospheric current source modeling and global geomagnetic induction using ground geomagnetic observatory data

    NASA Astrophysics Data System (ADS)

    Sun, J.; Kelbert, A.; Egbert, G. D.

    2015-10-01

    Long-period global-scale electromagnetic induction studies of deep Earth conductivity are based almost exclusively on magnetovariational methods and require accurate models of external source spatial structure. We describe approaches to inverting for both the external sources and three-dimensional (3-D) conductivity variations and apply these methods to long-period (T≥1.2 days) geomagnetic observatory data. Our scheme involves three steps: (1) Observatory data from 60 years (only partly overlapping and with many large gaps) are reduced and merged into dominant spatial modes using a scheme based on frequency domain principal components. (2) Resulting modes are inverted for corresponding external source spatial structure, using a simplified conductivity model with radial variations overlain by a two-dimensional thin sheet. The source inversion is regularized using a physically based source covariance, generated through superposition of correlated tilted zonal (quasi-dipole) current loops, representing ionospheric source complexity smoothed by Earth rotation. Free parameters in the source covariance model are tuned by a leave-one-out cross-validation scheme. (3) The estimated data modes are inverted for 3-D Earth conductivity, assuming the source excitation estimated in step 2. Together, these developments constitute key components in a practical scheme for simultaneous inversion of the catalogue of historical and modern observatory data for external source spatial structure and 3-D Earth conductivity.

  20. Development of a high-current microwave ion source for proton linac application systems

    NASA Astrophysics Data System (ADS)

    Tanaka, M.; Hara, S.; Hae, T.; Iga, T.; Saitou, K.; Amemiya, K.; Hiramoto, K.; Kakiuchi, S.

    2004-05-01

    A microwave hydrogen ion source was developed to improve reliability, and to increase operation time of proton linac application systems. The ion source needs no filament in the discharge chamber, which leads to better reliability and less maintenance time. The developed source produced a maximum hydrogen ion beam current of 70 mA (high current density of 360 mA/cm2, beam energy of 30 keV) with a 5 mm diam extraction aperture and 1.2 kW microwave power. The proton fraction was increased with an increase in rf power and reached around 90% at 1 kW. Measured 90% beam normalized emittance was 0.4 π mm mrad. Rise times of rf power and beam current to 90% of the final values were about 30 and 35 μs, respectively, at a pulse operation mode with 400 μs pulse width and 100 Hz repetition rate. The dynamic range of beam currents was enlarged (3-63 mA) in the pulse mode with a modified rf wave form to assist ignition of microwave discharge. These performance parameters will be desirable for pulse operation accelerator applications like proton therapy systems. A long time operation stability (150 h) was confirmed with a beam current of 51 mA; change in the current was 2%.

  1. The Feasibility of a Current-Source Thermoelectric Power Generator and Its Corresponding Structure Design

    NASA Astrophysics Data System (ADS)

    Wu, Guangxi; Yu, Xiong

    2015-06-01

    Traditional thermoelectric power generators consist of thermoelectric elements connected electrically in series and thermally in parallel. Current flowing inside the thermoelectric power generator is conventionally considered to be driven by the Seebeck effect-induced electric field and the output voltage-induced reverse electric field. This paper proposes a more comprehensive model that implies that current is also driven by chemical potential and carrier density variation. Therefore, the thermoelectric power generator can be treated as a current-source power supplier when the current driven by carrier density variation dominates. This paper performs holistic finite element implementation of the new holistic model where a thermoelectric power generator unit behaves like a current-source while the working temperature conditions maintain stability. This result validates that the thermoelectric element shows the behaviors of a current-source power supply under certain conditions. This discovery brings a new perspective on the behaviors of thermoelectric elements, which potentially will lead to the development of novel thermoelectric power generator design.

  2. Fabrication and characterization of CMOS-MEMS thermoelectric micro generators.

    PubMed

    Kao, Pin-Hsu; Shih, Po-Jen; Dai, Ching-Liang; Liu, Mao-Chen

    2010-01-01

    This work presents a thermoelectric micro generator fabricated by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-CMOS process. The micro generator is composed of 24 thermocouples in series. Each thermocouple is constructed by p-type and n-type polysilicon strips. The output power of the generator depends on the temperature difference between the hot and cold parts in the thermocouples. In order to prevent heat-receiving in the cold part in the thermocouples, the cold part is covered with a silicon dioxide layer with low thermal conductivity to insulate the heat source. The hot part of the thermocouples is suspended and connected to an aluminum plate, to increases the heat-receiving area in the hot part. The generator requires a post-CMOS process to release the suspended structures. The post-CMOS process uses an anisotropic dry etching to remove the oxide sacrificial layer and an isotropic dry etching to etch the silicon substrate. Experimental results show that the micro generator has an output voltage of 67 μV at the temperature difference of 1 K. PMID:22205869

  3. Fabrication and Characterization of CMOS-MEMS Thermoelectric Micro Generators

    PubMed Central

    Kao, Pin-Hsu; Shih, Po-Jen; Dai, Ching-Liang; Liu, Mao-Chen

    2010-01-01

    This work presents a thermoelectric micro generator fabricated by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-CMOS process. The micro generator is composed of 24 thermocouples in series. Each thermocouple is constructed by p-type and n-type polysilicon strips. The output power of the generator depends on the temperature difference between the hot and cold parts in the thermocouples. In order to prevent heat-receiving in the cold part in the thermocouples, the cold part is covered with a silicon dioxide layer with low thermal conductivity to insulate the heat source. The hot part of the thermocouples is suspended and connected to an aluminum plate, to increases the heat-receiving area in the hot part. The generator requires a post-CMOS process to release the suspended structures. The post-CMOS process uses an anisotropic dry etching to remove the oxide sacrificial layer and an isotropic dry etching to etch the silicon substrate. Experimental results show that the micro generator has an output voltage of 67 μV at the temperature difference of 1 K. PMID:22205869

  4. Studies in High Current Density Ion Sources for Heavy Ion FusionApplications

    SciTech Connect

    Chacon-Golcher, E.

    2002-06-01

    This dissertation develops diverse research on small (diameter {approx} few mm), high current density (J {approx} several tens of mA/cm{sup 2}) heavy ion sources. The research has been developed in the context of a programmatic interest within the Heavy Ion Fusion (HIF) Program to explore alternative architectures in the beam injection systems that use the merging of small, bright beams. An ion gun was designed and built for these experiments. Results of average current density yield () at different operating conditions are presented for K{sup +} and Cs{sup +} contact ionization sources and potassium aluminum silicate sources. Maximum values for a K{sup +} beam of {approx}90 mA/cm{sup 2} were observed in 2.3 {micro}s pulses. Measurements of beam intensity profiles and emittances are included. Measurements of neutral particle desorption are presented at different operating conditions which lead to a better understanding of the underlying atomic diffusion processes that determine the lifetime of the emitter. Estimates of diffusion times consistent with measurements are presented, as well as estimates of maximum repetition rates achievable. Diverse studies performed on the composition and preparation of alkali aluminosilicate ion sources are also presented. In addition, this work includes preliminary work carried out exploring the viability of an argon plasma ion source and a bismuth metal vapor vacuum arc (MEVVA) ion source. For the former ion source, fast rise-times ({approx} 1 {micro}s), high current densities ({approx} 100 mA/cm{sup 2}) and low operating pressures (< 2 mtorr) were verified. For the latter, high but acceptable levels of beam emittance were measured ({var_epsilon}{sub n} {le} 0.006 {pi} mm {center_dot} mrad) although measured currents differed from the desired ones (I {approx} 5mA) by about a factor of 10.

  5. Beam current enhancement of microwave plasma ion source utilizing double-port rectangular cavity resonator.

    PubMed

    Lee, Yuna; Park, Yeong-Shin; Jo, Jong-Gab; Yang, J J; Hwang, Y S

    2012-02-01

    Microwave plasma ion source with rectangular cavity resonator has been examined to improve ion beam current by changing wave launcher type from single-port to double-port. The cavity resonators with double-port and single-port wave launchers are designed to get resonance effect at TE-103 mode and TE-102 mode, respectively. In order to confirm that the cavities are acting as resonator, the microwave power for breakdown is measured and compared with the E-field strength estimated from the HFSS (High Frequency Structure Simulator) simulation. Langmuir probe measurements show that double-port cavity enhances central density of plasma ion source by modifying non-uniform plasma density profile of the single-port cavity. Correspondingly, beam current from the plasma ion source utilizing the double-port resonator is measured to be higher than that utilizing single-port resonator. Moreover, the enhancement in plasma density and ion beam current utilizing the double-port resonator is more pronounced as higher microwave power applied to the plasma ion source. Therefore, the rectangular cavity resonator utilizing the double-port is expected to enhance the performance of plasma ion source in terms of ion beam extraction. PMID:22380295

  6. Beam current enhancement of microwave plasma ion source utilizing double-port rectangular cavity resonator

    SciTech Connect

    Lee, Yuna; Park, Yeong-Shin; Jo, Jong-Gab; Yang, J. J.; Hwang, Y. S.

    2012-02-15

    Microwave plasma ion source with rectangular cavity resonator has been examined to improve ion beam current by changing wave launcher type from single-port to double-port. The cavity resonators with double-port and single-port wave launchers are designed to get resonance effect at TE-103 mode and TE-102 mode, respectively. In order to confirm that the cavities are acting as resonator, the microwave power for breakdown is measured and compared with the E-field strength estimated from the HFSS (High Frequency Structure Simulator) simulation. Langmuir probe measurements show that double-port cavity enhances central density of plasma ion source by modifying non-uniform plasma density profile of the single-port cavity. Correspondingly, beam current from the plasma ion source utilizing the double-port resonator is measured to be higher than that utilizing single-port resonator. Moreover, the enhancement in plasma density and ion beam current utilizing the double-port resonator is more pronounced as higher microwave power applied to the plasma ion source. Therefore, the rectangular cavity resonator utilizing the double-port is expected to enhance the performance of plasma ion source in terms of ion beam extraction.

  7. Langmuir probe diagnostics of plasma in high current electron cyclotron resonance proton ion source

    SciTech Connect

    Roychowdhury, P.; Kewlani, H.; Mishra, L.; Mittal, K. C.; Patil, D. S.

    2013-07-15

    A high current Electron Cyclotron Resonance (ECR) proton ion source has been developed for low energy high intensity proton accelerator at Bhabha Atomic Research Centre. Langmuir probe diagnostics of the plasma generated in this proton ion source is performed using Langmuir probe. The diagnostics of plasma in the ion source is important as it determines beam parameters of the ion source, i.e., beam current, emittance, and available species. The plasma parameter measurement in the ion source is performed in continuously working and pulsed mode using hydrogen as plasma generation gas. The measurement is performed in the ECR zone for operating pressure and microwave power range of 10{sup −4}–10{sup −3} mbar and 400–1000 W. An automated Langmuir probe diagnostics unit with data acquisition system is developed to measure these parameters. The diagnostics studies indicate that the plasma density and plasma electron temperature measured are in the range 5.6 × 10{sup 10} cm{sup −3} to 3.8 × 10{sup 11} cm{sup −3} and 4–14 eV, respectively. Using this plasma, ion beam current of tens of mA is extracted. The variations of plasma parameters with microwave power, gas pressure, and radial location of the probe have been studied.

  8. Nodal Analysis Optimization Based on the Use of Virtual Current Sources: A Powerful New Pedagogical Method

    ERIC Educational Resources Information Center

    Chatzarakis, G. E.

    2009-01-01

    This paper presents a new pedagogical method for nodal analysis optimization based on the use of virtual current sources, applicable to any linear electric circuit (LEC), regardless of its complexity. The proposed method leads to straightforward solutions, mostly arrived at by inspection. Furthermore, the method is easily adapted to computer…

  9. Gyrotron-driven high current ECR ion source for boron-neutron capture therapy neutron generator

    NASA Astrophysics Data System (ADS)

    Skalyga, V.; Izotov, I.; Golubev, S.; Razin, S.; Sidorov, A.; Maslennikova, A.; Volovecky, A.; Kalvas, T.; Koivisto, H.; Tarvainen, O.

    2014-12-01

    Boron-neutron capture therapy (BNCT) is a perspective treatment method for radiation resistant tumors. Unfortunately its development is strongly held back by a several physical and medical problems. Neutron sources for BNCT currently are limited to nuclear reactors and accelerators. For wide spread of BNCT investigations more compact and cheap neutron source would be much more preferable. In present paper an approach for compact D-D neutron generator creation based on a high current ECR ion source is suggested. Results on dense proton beams production are presented. A possibility of ion beams formation with current density up to 600 mA/cm2 is demonstrated. Estimations based on obtained experimental results show that neutron target bombarded by such deuteron beams would theoretically yield a neutron flux density up to 6·1010 cm-2/s. Thus, neutron generator based on a high-current deuteron ECR source with a powerful plasma heating by gyrotron radiation could fulfill the BNCT requirements significantly lower price, smaller size and ease of operation in comparison with existing reactors and accelerators.

  10. TID Simulation of Advanced CMOS Devices for Space Applications

    NASA Astrophysics Data System (ADS)

    Sajid, Muhammad

    2016-07-01

    This paper focuses on Total Ionizing Dose (TID) effects caused by accumulation of charges at silicon dioxide, substrate/silicon dioxide interface, Shallow Trench Isolation (STI) for scaled CMOS bulk devices as well as at Buried Oxide (BOX) layer in devices based on Silicon-On-Insulator (SOI) technology to be operated in space radiation environment. The radiation induced leakage current and corresponding density/concentration electrons in leakage current path was presented/depicted for 180nm, 130nm and 65nm NMOS, PMOS transistors based on CMOS bulk as well as SOI process technologies on-board LEO and GEO satellites. On the basis of simulation results, the TID robustness analysis for advanced deep sub-micron technologies was accomplished up to 500 Krad. The correlation between the impact of technology scaling and magnitude of leakage current with corresponding total dose was established utilizing Visual TCAD Genius program.

  11. A cookbook for building a high-current dimpled H– magnetron source for accelerators

    DOE PAGESBeta

    Bollinger, Daniel S.; Karns, Patrick R.; Tan, Cheng -Yang

    2015-10-30

    A high-current (>50 mA) dimpled H– magnetron source has been built at Fermilab for supplying H– beam to the entire accelerator complex. Despite many decades of expertise with slit H– magnetron sources at Fermilab, we were faced with many challenges from the dimpled H– magnetron source, which needed to be overcome in order to make it operational. Dimpled H– sources for high-energy physics are not new: Brookhaven National Laboratory has operated a dimpled H- source for more than two decades. However, the transference of that experience to Fermilab took about two years because a cookbook for building this type ofmore » source did not exist and seemingly innocuous or undocumented choices had a huge impact on the success or failure for this type of source. Moreover, it is the goal of this paper to document the reasons for these choices and to present a cookbook for building and operating dimpled H– magnetron sources.« less

  12. RF Sources for the ITER Ion Cyclotron Heating and Current Drive System

    SciTech Connect

    Hosea, J.; Brunkhorst, C.; Fredd, E.; Goulding, R. H.; Goulding, R. H.; Greenough, N.; Kung, C.; Rasmussen, D. A.; Swain, D. W.; Wilson, J. R.

    2005-10-04

    The RF source requirements for the ITER ion cyclotron (IC) heating and current drive system are very challenging ? 20 MW CW power into an antenna load with a VSWR of up to 2 over the frequency range of 35-65 MHz. For the two present antenna designs under consideration, 8 sources providing 2.5 MW each are to be employed. For these sources, the outputs of two final power amplifiers (FPAs), using the high power CPI 4CM2500KG tube, are combined with a 180? hybrid combiner to easily meet the ITER IC source requirements ? 2.5 MW is supplied at a VSWR of 2 at ? 70% of the maximum tube power available in class B operation. The cylindrical cavity configuration for the FPAs is quite compact so that the 8 combined sources fit into the space allocated at the ITER site with room to spare. The source configuration is described in detail and its projected operating power curves are presented. Although the CPI tube has been shown to be stable under high power operating conditions on many facilities, a test of the combined FPA source arrangement is in preparation using existing high power 30 MHz amplifiers to assure that this configuration can be made robustly stable for all phases at a VSWR up to 2. The possibility of using 12 sources to feed a suitably modified antenna design is also discussed in the context of providing flexibility for specifying the final IC antenna design.

  13. A current-source inverter fed induction motor drive system with reduced losses

    SciTech Connect

    Espinoza, J.R.; Joos, G.

    1995-12-31

    Standard low and medium induction power motor drives are based on the PWM voltage source inverter (VSI) fed from a diode rectifier. The dual topology, based on the current source inverter/rectifier structure is used in medium and high power applications. This paper addresses some of the drawbacks of this approach compared to the voltage source approach. The proposed drive features: (a) an on-line operated PWM inverter, using instantaneous output capacitor voltage control based on space vector modulation; (b) a line-synchronized PWM rectifier, with dc bus current control; (c) an additional inverter modulation index control loop, ensuring a constant inverter modulation index. The resulting advantages include: (a) ruggedness and inherent continuous regeneration capability; (b) near unity global input power factor; (c) reduced motor voltage distortion; (d) reduced dc bus inductor and switch conduction losses; (e) fast motor dynamic response; (f) elimination of motor circuit resonances. Simulated and experimental results based on a DSP implementation are given.

  14. The source altitude, electric current, and intrinsic brightness of terrestrial gamma ray flashes

    NASA Astrophysics Data System (ADS)

    Cummer, Steven A.; Briggs, Michael S.; Dwyer, Joseph R.; Xiong, Shaolin; Connaughton, Valerie; Fishman, Gerald J.; Lu, Gaopeng; Lyu, Fanchao; Solanki, Rahulkumar

    2014-12-01

    Many details of how thunderstorms generate terrestrial gamma ray flashes (TGFs) and other forms of high-energy radiation remain uncertain, including the basic question of where they are produced. We exploit the association of distinct low-frequency radio emissions with generation of terrestrial gamma ray flashes (TGFs) to directly measure for the first time the TGF source altitude. Analysis of two events reveals source altitudes of 11.8 ± 0.4 km and 11.9 ± 0.9 km. This places the source region in the interior of the thunderstorm between the two main charge layers and implies an intrinsic TGF brightness of approximately 1018 runaway electrons. The electric current in this nontraditional lightning process is found to be strong enough to drive nonlinear effects in the ionosphere, and in one case is comparable to the highest peak current lightning processes on the planet.

  15. High-voltage CMOS detectors

    NASA Astrophysics Data System (ADS)

    Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

    2016-07-01

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented.

  16. CMOS output buffer wave shaper

    NASA Technical Reports Server (NTRS)

    Albertson, L.; Whitaker, S.; Merrell, R.

    1990-01-01

    As the switching speeds and densities of Digital CMOS integrated circuits continue to increase, output switching noise becomes more of a problem. A design technique which aids in the reduction of switching noise is reported. The output driver stage is analyzed through the use of an equivalent RLC circuit. The results of the analysis are used in the design of an output driver stage. A test circuit based on these techniques is being submitted to MOSIS for fabrication.

  17. Cryogenic CMOS circuits for single charge digital readout.

    SciTech Connect

    Gurrieri, Thomas M.; Longoria, Erin Michelle; Eng, Kevin; Carroll, Malcolm S.; Hamlet, Jason R.; Young, Ralph Watson

    2010-03-01

    The readout of a solid state qubit often relies on single charge sensitive electrometry. However the combination of fast and accurate measurements is non trivial due to large RC time constants due to the electrometers resistance and shunt capacitance from wires between the cold stage and room temperature. Currently fast sensitive measurements are accomplished through rf reflectrometry. I will present an alternative single charge readout technique based on cryogenic CMOS circuits in hopes to improve speed, signal-to-noise, power consumption and simplicity in implementation. The readout circuit is based on a current comparator where changes in current from an electrometer will trigger a digital output. These circuits were fabricated using Sandia's 0.35 {micro}m CMOS foundry process. Initial measurements of comparators with an addition a current amplifier have displayed current sensitivities of < 1nA at 4.2K, switching speeds up to {approx}120ns, while consuming {approx}10 {micro}W. I will also discuss an investigation of noise characterization of our CMOS process in hopes to obtain a better understanding of the ultimate limit in signal to noise performance.

  18. Cryogenic CMOS circuits for single charge digital readout

    NASA Astrophysics Data System (ADS)

    Eng, Kevin; Gurrieri, T. M.; Hamlet, J.; Carroll, M. S.

    2010-03-01

    The readout of a solid state qubit often relies on single charge sensitive electrometry. However the combination of fast and accurate measurements is non trivial due to large RC time constants due to the electrometers resistance and shunt capacitance from wires between the cold stage and room temperature. Currently fast sensitive measurements are accomplished through rf reflectrometry. I will present an alternative single charge readout technique based on cryogenic CMOS circuits in hopes to improve speed, signal-to-noise, power consumption and simplicity in implementation. The readout circuit is based on a current comparator where changes in current from an electrometer will trigger a digital output. These circuits were fabricated using Sandia's 0.35μm CMOS foundry process. Initial measurements of comparators with an addition a current amplifier have displayed current sensitivities of < 1nA at 4.2K, switching speeds up to ˜120ns, while consuming ˜10μW. I will also discuss an investigation of noise characterization of our CMOS process in hopes to obtain a better understanding of the ultimate limit in signal to noise performance.

  19. Lateral spreading in a steady turbulent density current from an isolated source

    NASA Astrophysics Data System (ADS)

    Wells, Andrew; Vivian, Josh

    2014-11-01

    Turbulent buoyancy-driven flows on slopes occur in a range of environmental settings, such as dense ocean overflows, atmospheric katabatic winds, meltwater flows under ice shelves, or discharge of industrial effluents. A convenient modelling approach for dense currents from isolated sources considers a so-called ``streamtube approximation,'' averaging over the cross-section of the current to yield an effectively one-dimensional model for the evolution of flow along a streamline. However, such modelling approaches typically parameterise any changes in current width, rather than directly predicting the dynamics of lateral spreading. To build insight into the relevant dynamics, we consider steady density currents flowing down a planar slope, supplied by a continuous buoyancy flux from an isolated source. A model is developed to describe the downslope evolution of flow averaged over the width and depth of the current, including a new dynamical treatment of lateral spreading. We analyse theoretical and numerical solutions, before comparing to laboratory experiments with a dense saline current flowing down a slope.

  20. Bipolar square-wave current source for transient electromagnetic systems based on constant shutdown time

    NASA Astrophysics Data System (ADS)

    Wang, Shilong; Yin, Changchun; Lin, Jun; Yang, Yu; Hu, Xueyan

    2016-03-01

    Cooperative work of multiple magnetic transmitting sources is a new trend in the development of transient electromagnetic system. The key is the bipolar current waves shutdown, concurrently in the inductive load. In the past, it was difficult to use the constant clamping voltage technique to realize the synchronized shutdown of currents with different peak values. Based on clamping voltage technique, we introduce a new controlling method with constant shutdown time. We use the rising time to control shutdown time and use low voltage power source to control peak current. From the viewpoint of the circuit energy loss, by taking the high-voltage capacitor bypass resistance and the capacitor of the passive snubber circuit into account, we establish the relationship between the rising time and the shutdown time. Since the switch is not ideal, we propose a new method to test the shutdown time by the low voltage, the high voltage and the peak current. Experimental results show that adjustment of the current rising time can precisely control the value of the clamp voltage. When the rising time is fixed, the shutdown time is unchanged. The error for shutdown time deduced from the energy consumption is less than 6%. The new controlling method on current shutdown proposed in this paper can be used in the cooperative work of borehole and ground transmitting system.

  1. Monolithic active pixel sensors (MAPS) in a VLSI CMOS technology

    NASA Astrophysics Data System (ADS)

    Turchetta, R.; French, M.; Manolopoulos, S.; Tyndel, M.; Allport, P.; Bates, R.; O'Shea, V.; Hall, G.; Raymond, M.

    2003-03-01

    Monolithic Active Pixel Sensors (MAPS) designed in a standard VLSI CMOS technology have recently been proposed as a compact pixel detector for the detection of high-energy charged particle in vertex/tracking applications. MAPS, also named CMOS sensors, are already extensively used in visible light applications. With respect to other competing imaging technologies, CMOS sensors have several potential advantages in terms of low cost, low power, lower noise at higher speed, random access of pixels which allows windowing of region of interest, ability to integrate several functions on the same chip. This brings altogether to the concept of 'camera-on-a-chip'. In this paper, we review the use of CMOS sensors for particle physics and we analyse their performances in term of the efficiency (fill factor), signal generation, noise, readout speed and sensor area. In most of high-energy physics applications, data reduction is needed in the sensor at an early stage of the data processing before transfer of the data to tape. Because of the large number of pixels, data reduction is needed on the sensor itself or just outside. This brings in stringent requirements on the temporal noise as well as to the sensor uniformity, expressed as a Fixed Pattern Noise (FPN). A pixel architecture with an additional transistor is proposed. This architecture, coupled to correlated double sampling of the signal will allow cancellation of the two dominant noise sources, namely the reset or kTC noise and the FPN. A prototype has been designed in a standard 0.25 μm CMOS technology. It has also a structure for electrical calibration of the sensor. The prototype is functional and detailed tests are under way.

  2. CMOS downsizing toward sub-10 nm

    NASA Astrophysics Data System (ADS)

    Iwai, Hiroshi

    2004-04-01

    Recently, CMOS downsizing has been accelerated very aggressively in both production and research level, and even transistor operation of a 6 nm gate length p-channel MOSFET was reported in a conference. However, many serious problems are expected for implementing such small-geometry MOSFETs into large scale integrated circuits, and it is still questionable whether we can successfully introduce sub-10 nm CMOS LSIs into the market or not. In this paper, limitation and its possible causes for the downscaling of CMOS towards sub-10 nm are discussed with consideration of past CMOS predictions for the limitation.

  3. Passive radiation detection using optically active CMOS sensors

    NASA Astrophysics Data System (ADS)

    Dosiek, Luke; Schalk, Patrick D.

    2013-05-01

    Recently, there have been a number of small-scale and hobbyist successes in employing commodity CMOS-based camera sensors for radiation detection. For example, several smartphone applications initially developed for use in areas near the Fukushima nuclear disaster are capable of detecting radiation using a cell phone camera, provided opaque tape is placed over the lens. In all current useful implementations, it is required that the sensor not be exposed to visible light. We seek to build a system that does not have this restriction. While building such a system would require sophisticated signal processing, it would nevertheless provide great benefits. In addition to fulfilling their primary function of image capture, cameras would also be able to detect unknown radiation sources even when the danger is considered to be low or non-existent. By experimentally profiling the image artifacts generated by gamma ray and β particle impacts, algorithms are developed to identify the unique features of radiation exposure, while discarding optical interaction and thermal noise effects. Preliminary results focus on achieving this goal in a laboratory setting, without regard to integration time or computational complexity. However, future work will seek to address these additional issues.

  4. Neutron generator for BNCT based on high current ECR ion source with gyrotron plasma heating.

    PubMed

    Skalyga, V; Izotov, I; Golubev, S; Razin, S; Sidorov, A; Maslennikova, A; Volovecky, A; Kalvas, T; Koivisto, H; Tarvainen, O

    2015-12-01

    BNCT development nowadays is constrained by a progress in neutron sources design. Creation of a cheap and compact intense neutron source would significantly simplify trial treatments avoiding use of expensive and complicated nuclear reactors and accelerators. D-D or D-T neutron generator is one of alternative types of such sources for. A so-called high current quasi-gasdynamic ECR ion source with plasma heating by millimeter wave gyrotron radiation is suggested to be used in a scheme of D-D neutron generator in the present work. Ion source of that type was developed in the Institute of Applied Physics of Russian Academy of Sciences (Nizhny Novgorod, Russia). It can produce deuteron ion beams with current density up to 700-800 mA/cm(2). Generation of the neutron flux with density at the level of 7-8·10(10) s(-1) cm(-2) at the target surface could be obtained in case of TiD2 target bombardment with deuteron beam accelerated to 100 keV. Estimations show that it is enough for formation of epithermal neutron flux with density higher than 10(9) s(-1) cm(-2) suitable for BNCT. Important advantage of described approach is absence of Tritium in the scheme. First experiments performed in pulsed regime with 300 mA, 45 kV deuteron beam directed to D2O target demonstrated 10(9) s(-1) neutron flux. This value corresponds to theoretical estimations and proofs prospects of neutron generator development based on high current quasi-gasdynamic ECR ion source. PMID:26302662

  5. Monolithic integration of high bandwidth waveguide coupled Ge photodiode in a photonic BiCMOS process

    NASA Astrophysics Data System (ADS)

    Lischke, S.; Knoll, D.; Zimmermann, L.

    2015-03-01

    Monolithic integration of photonic functionality in the frontend-of-line (FEOL) of an advanced microelectronics technology is a key step towards future communication applications. This combines photonic components such as waveguides, couplers, modulators, and photo detectors with high-speed electronics plus shortest possible interconnects crucial for high-speed performance. Integration of photonics into CMOS FEOL is therefore in development for quite some time reaching 90nm node recently [1]. However, an alternative to CMOS is high-performance BiCMOS, offering significant advantages for integrated photonics-electronics applications with regard to cost and RF performance. We already presented results of FEOL integration of photonic components in a high-performance SiGe:C BiCMOS baseline to establish a novel, photonic BiCMOS process. Process cornerstone is a local-SOI approach which allows us to fabricate SOI-based, thus low-loss photonic components in a bulk BiCMOS environment [2]. A monolithically integrated 10Gbit/sec Silicon modulator with driver was shown here [3]. A monolithically integrated 25Gbps receiver was presented in [4], consisting of 200GHz bipolar transistors and CMOS devices, low-loss waveguides, couplers, and highspeed Ge photo diodes showing 3-dB bandwidth of 35GHz, internal responsivity of more than 0.6A/W at λ= 1.55μm, and ~ 50nA dark current at 1V. However, the BiCMOS-given thermal steps cause a significant smearing of the Germanium photo diodes doping profile, limiting the photo diode performance. Therefore, we introduced implantation of non-doping elements to overcome such limiting factors, resulting in photo diode bandwidths of more than 50GHz even under the effect of thermal steps necessary when the diodes are integrated in a high performance BiCMOS process.

  6. Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Jones, Todd J.; Dickie, Matthew R.; Greer, Frank; Cunningham, Thomas J.; Blazejewski, Edward; Nikzad, Shouleh

    2009-01-01

    In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

  7. Direct current H- source for boron neutron capture therapy tandem acceleratora)

    NASA Astrophysics Data System (ADS)

    Belchenko, Yu.; Sanin, A.; Gusev, I.; Khilchenko, A.; Kvashnin, A.; Rashchenko, V.; Savkin, V.; Zubarev, P.

    2008-02-01

    One year experience of dc H- source operation at 2MeV tandem accelerator is described. The source delivers H- ion beams with controlled current in the range of 1-8mA and energy up to 25keV. Normalized 1rms emittance for 8mA beam is less than 0.2πmmmrad. Negative ions are produced on the cesiated anode of the Penning discharge, driven by plasma injection from the hollow cathode inserts.

  8. Direct current H{sup -} source for boron neutron capture therapy tandem accelerator

    SciTech Connect

    Belchenko, Yu.; Sanin, A.; Gusev, I.; Khilchenko, A.; Kvashnin, A.; Rashchenko, V.; Savkin, V.; Zubarev, P.

    2008-02-15

    One year experience of dc H{sup -} source operation at 2 MeV tandem accelerator is described. The source delivers H{sup -} ion beams with controlled current in the range of 1-8 mA and energy up to 25 keV. Normalized 1 rms emittance for 8 mA beam is less than 0.2{pi} mm mrad. Negative ions are produced on the cesiated anode of the Penning discharge, driven by plasma injection from the hollow cathode inserts.

  9. Hybrid CMOS SiPIN detectors as astronomical imagers

    NASA Astrophysics Data System (ADS)

    Simms, Lance Michael

    Charge Coupled Devices (CCDs) have dominated optical and x-ray astronomy since their inception in 1969. Only recently, through improvements in design and fabrication methods, have imagers that use Complimentary Metal Oxide Semiconductor (CMOS) technology gained ground on CCDs in scientific imaging. We are now in the midst of an era where astronomers might begin to design optical telescope cameras that employ CMOS imagers. The first three chapters of this dissertation are primarily composed of introductory material. In them, we discuss the potential advantages that CMOS imagers offer over CCDs in astronomical applications. We compare the two technologies in terms of the standard metrics used to evaluate and compare scientific imagers: dark current, read noise, linearity, etc. We also discuss novel features of CMOS devices and the benefits they offer to astronomy. In particular, we focus on a specific kind of hybrid CMOS sensor that uses Silicon PIN photodiodes to detect optical light in order to overcome deficiencies of commercial CMOS sensors. The remaining four chapters focus on a specific type of hybrid CMOS Silicon PIN sensor: the Teledyne Hybrid Visible Silicon PIN Imager (HyViSI). In chapters four and five, results from testing HyViSI detectors in the laboratory and at the Kitt Peak 2.1m telescope are presented. We present our laboratory measurements of the standard detector metrics for a number of HyViSI devices, ranging from 1k×1k to 4k×4k format. We also include a description of the SIDECAR readout circuit that was used to control the detectors. We then show how they performed at the telescope in terms of photometry, astrometry, variability measurement, and telescope focusing and guiding. Lastly, in the final two chapters we present results on detector artifacts such as pixel crosstalk, electronic crosstalk, and image persistence. One form of pixel crosstalk that has not been discussed elsewhere in the literature, which we refer to as Interpixel Charge

  10. Discharge chamber of high-current ion source with cold hollow cathode

    SciTech Connect

    Glazunov, V.N.; Grechanyi, V.G.; Metel', A.S.

    1988-08-01

    The discharge chamber of a high-current ion source with a sectional cold hollow cathode of conical shape formed by 44 coaxial rings and an emission grid is described. For a relative loss aperture of approx. = 1% of the fast oscillating electrons from the cavity, the discharge voltage does not exceed 500 V for currents of up to 200 A and helium or argon pressures of less than or equal to 10/sup -1/ Pa. Stable conditions are obtained with ion-extraction factors of up to 13% and a nonuniformity of ion-current density of approx. = 10% in the central zone of a grid with a diameter of up to 20 cm for a discharge current of 200 A and a pulse duration of up to 1 msec.

  11. Contact CMOS imaging of gaseous oxygen sensor array

    PubMed Central

    Daivasagaya, Daisy S.; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C.; Chodavarapu, Vamsy P.; Bright, Frank V.

    2014-01-01

    We describe a compact luminescent gaseous oxygen (O2) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O2-sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp)3]2+) encapsulated within sol–gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors. PMID:24493909

  12. Fully CMOS analog and digital SiPMs

    NASA Astrophysics Data System (ADS)

    Zou, Yu; Villa, Federica; Bronzi, Danilo; Tisa, Simone; Tosi, Alberto; Zappa, Franco

    2015-03-01

    Silicon Photomultipliers (SiPMs) are emerging single photon detectors used in many applications requiring large active area, photon-number resolving capability and immunity to magnetic fields. We present three families of analog SiPM fabricated in a reliable and cost-effective fully standard planar CMOS technology with a total photosensitive area of 1×1 mm2. These three families have different active areas with fill-factors (21%, 58.3%, 73.7%) comparable to those of commercial SiPM, which are developed in vertical (current flow) custom technologies. The peak photon detection efficiency in the near-UV tops at 38% (fill-factor included) comparable to commercial custom-process ones and dark count rate density is just a little higher than the best-in-class commercial analog SiPMs. Thanks to the CMOS processing, these new SiPMs can be integrated together with active components and electronics both within the microcell and on-chip, in order to act at the microcell level or to perform global pre-processing. We also report CMOS digital SiPMs in the same standard CMOS technology, based on microcells with digitalized processing, all integrated on-chip. This CMOS digital SiPMs has four 32×1 cells (128 microcells), each consisting of SPAD, active quenching circuit with adjustable dead time, digital control (to switch off noisy SPADs and readout position of detected photons), and fast trigger output signal. The achieved 20% fill-factor is still very good.

  13. Proof of principle study of the use of a CMOS active pixel sensor for proton radiography

    SciTech Connect

    Seco, Joao; Depauw, Nicolas

    2011-02-15

    Purpose: Proof of principle study of the use of a CMOS active pixel sensor (APS) in producing proton radiographic images using the proton beam at the Massachusetts General Hospital (MGH). Methods: A CMOS APS, previously tested for use in s-ray radiation therapy applications, was used for proton beam radiographic imaging at the MGH. Two different setups were used as a proof of principle that CMOS can be used as proton imaging device: (i) a pen with two metal screws to assess spatial resolution of the CMOS and (ii) a phantom with lung tissue, bone tissue, and water to assess tissue contrast of the CMOS. The sensor was then traversed by a double scattered monoenergetic proton beam at 117 MeV, and the energy deposition inside the detector was recorded to assess its energy response. Conventional x-ray images with similar setup at voltages of 70 kVp and proton images using commercial Gafchromic EBT 2 and Kodak X-Omat V films were also taken for comparison purposes. Results: Images were successfully acquired and compared to x-ray kVp and proton EBT2/X-Omat film images. The spatial resolution of the CMOS detector image is subjectively comparable to the EBT2 and Kodak X-Omat V film images obtained at the same object-detector distance. X-rays have apparent higher spatial resolution than the CMOS. However, further studies with different commercial films using proton beam irradiation demonstrate that the distance of the detector to the object is important to the amount of proton scatter contributing to the proton image. Proton images obtained with films at different distances from the source indicate that proton scatter significantly affects the CMOS image quality. Conclusion: Proton radiographic images were successfully acquired at MGH using a CMOS active pixel sensor detector. The CMOS demonstrated spatial resolution subjectively comparable to films at the same object-detector distance. Further work will be done in order to establish the spatial and energy resolution of the

  14. A high speed, low power consumption LVDS interface for CMOS pixel sensors

    NASA Astrophysics Data System (ADS)

    Shi, Zhan; Tang, Zhenan; Tian, Yong; Pham, Hung; Valin, Isabelle; Jaaskelainen, Kimmo

    2015-01-01

    The use of CMOS Pixel Sensors (CPSs) offers a promising approach to the design of vertex detectors in High Energy Physics (HEP) experiments. As the CPS equipping the upgraded Solenoidal Tracker at RHIC (STAR) pixel detector, ULTIMATE perfectly illustrates the potential of CPSs for HEP applications. However, further development of CPSs with respect to readout speed is required to fulfill the readout time requirement of the next generation HEP detectors, such as the upgrade of A Large Ion Collider Experiment (ALICE) Inner Tracking System (ITS), the International Linear Collider (ILC), and the Compressed Baryonic Matter (CBM) vertex detectors. One actual limitation of CPSs is related to the speed of the Low-Voltage Differential Signaling (LVDS) circuitry implementing the interface between the sensor and the Data Acquisition (DAQ) system. To improve the transmission rate while keeping the power consumption at a low level, a source termination technique and a special current comparator were adopted for the LVDS driver and receiver, respectively. Moreover, hardening techniques are used. The circuitry was designed and submitted for fabrication in a 0.18-μm CMOS Image Sensor (CIS) process at the end of 2011. The test results indicated that the LVDS driver and receiver can operate properly at the data rate of 1.2 Gb/s with power consumption of 19.6 mW.

  15. A new curvature compensation technique for CMOS voltage reference using |VGS| and ΔVBE

    NASA Astrophysics Data System (ADS)

    Xuemin, Li; Mao, Ye; Gongyuan, Zhao; Yun, Zhang; Yiqiang, Zhao

    2016-05-01

    A new mixed curvature compensation technique for CMOS voltage reference is presented, which resorts to two sub-references with complementary temperature characteristics. The first sub-reference is the source–gate voltage |VGS|p of a PMOS transistor working in the saturated region. The second sub-reference is the weighted sum of gate–source voltages |VGS|n of NMOS transistors in the subthreshold region and the difference between two base–emitter voltages ΔVBE of bipolar junction transistors (BJTs). The voltage reference implemented utilizing the proposed curvature compensation technique exhibits a low temperature coefficient and occupies a small silicon area. The proposed technique was verified in 0.18 μm standard CMOS process technology. The performance of the circuit has been measured. The measured results show a temperature coefficient as low as 12.7 ppm/°C without trimming, over a temperature range from ‑40 to 120 °C, and the current consumption is 50 μA at room temperature. The measured power-supply rejection ratio (PSRR) is ‑31.2 dB @ 100 kHz. The circuit occupies an area of 0.045 mm2. Project supported by the National Natural Science Foundation of China (No. 61376032).

  16. TRIASSIC: the Time-Resolved Industrial Alpha-Source Scanning Induced Current microscope

    NASA Astrophysics Data System (ADS)

    Pallone, Arthur

    Time-resolved ion beam induced current (TRIBIC) microscopy yields useful information such as carrier mobility and lifetimes in semiconductors and defect locations in devices; however, traditional TRIBIC uses large, expensive particle accelerators that require specialized training to operate and maintain. The time-resolved industrial alpha-source scanning induced current (TRIASSIC) microscope transforms TRIBIC by replacing the particle accelerator facility with an affordable, tabletop instrument suitable for use in research and education at smaller colleges and universities. I will discuss the development of, successes with, setbacks to and future directions for TRIASSIC.

  17. Fiber-optic current sensor with self-compensation of source wavelength changes.

    PubMed

    Müller, G M; Quan, W; Lenner, M; Yang, L; Frank, A; Bohnert, K

    2016-06-15

    We demonstrate a method for self-compensation of scale factor changes of an interferometric fiber-optic current sensor caused by source wavelength shifts, e.g., due to changes in source temperature or drive current. An adequately tailored fiber-optic retarder in the optical circuit introduces wavelength-dependent mixing of the orthogonal polarization modes of the sensor. The resulting change in scale factor balances the variation of the Faraday effect with wavelength. The wavelength dependence of the sensor is suppressed by more than an order of magnitude to <0.2% over wavelength spans of at least 10 nm around 1305 nm. The retarder is designed as an athermal device for operation between -40°C and 80°C. PMID:27304309

  18. Changing sources and sinks of carbon in boreal ecosystems of Interior Alaska: Current and future perspectives

    NASA Astrophysics Data System (ADS)

    Douglas, T. A.; Jones, M.; Hiemstra, C. A.

    2012-12-01

    Future climate scenarios predict a roughly 5°C increase in mean annual air temperatures for the Alaskan Interior over the next 80 years. Increasing temperatures and greater frequency and severity of climate-induced disturbances such as wildfires will be enough to initiate permafrost degradation in many areas of Alaska, leading to major changes in surface hydrology and ecosystem structure and function. This, in turn, is expected to alter the current inventories of carbon sources and sinks in the region and provide a management challenge for carbon itemization efforts. To assist land managers in adapting and planning for potential changes in Interior Alaska carbon cycling we synthesize information on climate, ecosystem processes, vegetation, and soil, permafrost, and hydrologic regimes in Interior Alaska. Our goal is to provide an assessment of the current and likely future regime of Interior Alaska carbon sources and sinks. For our carbon assessment we: 1) synthesize the most recent results from numerous studies on the carbon cycle with a focus on research from the Alaskan boreal biome, 2) assemble a summary of estimates of carbon sources in soil and vegetation in Interior Alaska, 3) categorize carbon sources and sinks for predominant Interior Alaska ecosystems, and 4) identify expected changes in sources and sinks with climate change and human activities. This information is used to provide recommendations on potential actions land managers can take to minimize carbon export from the boreal forest. Though the results from our project are geared primarily toward policy makers and land managers we also provide recommendations for filling research gaps that currently present uncertainty in our understanding of the carbon cycle in boreal forest ecosystems of Interior Alaska.

  19. Current progress and future prospects of the VITA based neutron source.

    PubMed

    Aleynik, V; Bashkirtsev, A; Kanygin, V; Kasatov, D; Kuznetsov, A; Makarov, A; Schudlo, I; Sorokin, I; Taskaev, S; Tiunov, M

    2014-06-01

    At the BINP, a pilot accelerator based epithermal neutron source is now in use. Most recent investigations on the facility are related with studying the dark current, X-ray radiation measuring, optimization of H(-)-beam injection and new gas stripping target calibrating. The results of these studies, ways of providing stability to the accelerator are presented and discussed, as well as the ways of creating the therapeutic beam and strategies of applying the facility for clinical use. PMID:24369890

  20. Improved PHIP polarization using a precision, low noise, voltage controlled current source

    NASA Astrophysics Data System (ADS)

    Agraz, Jose; Grunfeld, Alexander; Cunningham, Karl; Li, Debiao; Wagner, Shawn

    2013-10-01

    Existing para-hydrogen induced polarization (PHIP) instrumentation relies on magnetic fields to hyperpolarize substances. These hyperpolarized substances have enhanced magnetic resonance imaging (MRI) signals over 10,000 fold, allowing for MRI at the molecular level. Required magnetic fields are generated by energizing a solenoid coil with current produced by a voltage controlled voltage source (VCVS), also known as a power supply. A VCVS lacks the current regulation necessary to keep magnetic field fluctuations to a minimum, which results in low PHIP polarization. A voltage controlled current source (VCCS) is an electric circuit that generates a steady flow of electrons proportional to an input voltage. A low noise VCCS provides the solenoid current flow regulation necessary to generate a stable static magnetic field (Bo). We discuss the design and implementation of a low noise, high stability, VCCS for magnetic field generation with minimum variations. We show that a precision, low noise, voltage reference driving a metal oxide semiconductor field effect transistor (MOSFET) based current sink, results in the current flow control necessary for generating a low noise and high stability Bo. In addition, this work: (1) compares current stability for ideal VCVS and VCCS models using transfer functions (TF), (2) develops our VCCS design's TF, (3) measures our VCCS design's thermal & 1/f noise, and (4) measures and compares hydroxyethyl-propionate (HEP) polarization obtained using a VCVS and our VCCS. The hyperpolarization of HEP was done using a PHIP instrument developed in our lab. Using our VCCS design, HEP polarization magnitude data show a statistically significant increase in polarization over using a VCVS. Circuit schematic, bill of materials, board layout, TF derivation, and Matlab simulations code are included as supplemental files.

  1. Design and characterization of the annular cathode high current pulsed electron beam source for circular components

    NASA Astrophysics Data System (ADS)

    Jiang, Wei; Wang, Langping; Wang, Xiaofeng

    2016-08-01

    In order to irradiate circular components with high current pulsed electron beam (HCPEB), an annular cathode based on carbon fiber bunches was designed and fabricated. Using an acceleration voltage of 25 kV, the maximum pulsed irradiation current and energy of this annular cathode can reach 7.9 kA and 300 J, respectively. The irradiation current density distribution of the annular cathode HCPEB source measured along the circumferential direction shows that the annular cathode has good emission uniformity. In addition, four 9310 steel substrates fixed uniformly along the circumferential direction of a metal ring substrate were irradiated by this annular cathode HCPEB source. The surface and cross-section morphologies of the irradiated samples were characterized by scanning electron microscopy (SEM). SEM images of the surface reveal that crater and surface undulation have been formed, which hints that the irradiation energy of the HCPEB process is large enough for surface modification of 9310 steel. Meanwhile, SEM cross-section images exhibit that remelted layers with a thickness of about 5.4 μm have been obtained in all samples, which proves that a good practical irradiation uniformity can be achieved by this annular cathode HCPEB source.

  2. A high current vacuum arc ion source for heavy ion fusion

    SciTech Connect

    Qi, N.; Gensler, S.W.; Prasad, R.R.; Krishnan, M.; Liu, F.; Brown, I.G.

    1997-12-31

    AASC is presently developing a vacuum arc ion source for Heavy Ion Fusion (HIF) and other commercial applications. Induction linear accelerators that produce energetic heavy ions beams are a prime candidate for power-producing fusion reactors. A source of heavy ions with low emittance and low beam noise, 1+ to 3+ charge states, {approx}0.5 A current, 5--20 {micro}s pulse widths and {approximately}10 Hz repetition rates is required. A gadolinium (A {approx} 158) ion beam with {approx}0.12 A beam current, 120 keV beam energy, {approx}2.5 cm diameter extraction aperture and 20 {micro}s pulse width has been produced for HIF studies. The authors have measured that >80% Gd ions were in the 2+ charge state, the beam current fluctuation level (rms) was {approx}1.5% and the beam emittance was {approx}0.3 {pi} mm mrad (normalized). With {approx}8 {times} 10{sup {minus}5} torr background gas pressure, the beam was well space-charge neutralized and good propagation of the 20 {micro}s long Gd ion beams was observed. Details of the work will be presented. The results of the experiment imply that the vacuum arc ion source is a highly promising candidate for HIF applications.

  3. CMOS Integrated Single Electron Transistor Electrometry (CMOS-SET) circuit design for nanosecond quantum-bit read-out.

    SciTech Connect

    Gurrieri, Thomas M.; Lilly, Michael Patrick; Carroll, Malcolm S.; Levy, James E.

    2008-08-01

    Novel single electron transistor (SET) read-out circuit designs are described. The circuits use a silicon SET interfaced to a CMOS voltage mode or current mode comparator to obtain a digital read-out of the state of the qubit. The design assumes standard submicron (0.35 um) CMOS SOI technology using room temperature SPICE models. Implications and uncertainties related to the temperature scaling of these models to 100mK operation are discussed. Using this technology, the simulations predict a read-out operation speed of approximately Ins and a power dissipation per cell as low as 2nW for single-shot read-out, which is a significant advantage over currently used radio frequency SET (RF-SET) approaches.

  4. Characterization and development of an event-driven hybrid CMOS x-ray detector

    NASA Astrophysics Data System (ADS)

    Griffith, Christopher

    2015-06-01

    Hybrid CMOS detectors (HCD) have provided great benefit to the infrared and optical fields of astronomy, and they are poised to do the same for X-ray astronomy. Infrared HCDs have already flown on the Hubble Space Telescope and the Wide-Field Infrared Survey Explorer (WISE) mission and are slated to fly on the James Webb Space Telescope (JWST). Hybrid CMOS X-ray detectors offer low susceptibility to radiation damage, low power consumption, and fast readout time to avoid pile-up. The fast readout time is necessary for future high throughput X-ray missions. The Speedster-EXD X-ray HCD presented in this dissertation offers new in-pixel features and reduces known noise sources seen on previous generation HCDs. The Speedster-EXD detector makes a great step forward in the development of these detectors for future space missions. This dissertation begins with an overview of future X-ray space mission concepts and their detector requirements. The background on the physics of semiconductor devices and an explanation of the detection of X-rays with these devices will be discussed followed by a discussion on CCDs and CMOS detectors. Next, hybrid CMOS X-ray detectors will be explained including their advantages and disadvantages. The Speedster-EXD detector and its new features will be outlined including its ability to only read out pixels which contain X-ray events. Test stand design and construction for the Speedster-EXD detector is outlined and the characterization of each parameter on two Speedster-EXD detectors is detailed including read noise, dark current, interpixel capacitance crosstalk (IPC), and energy resolution. Gain variation is also characterized, and a Monte Carlo simulation of its impact on energy resolution is described. This analysis shows that its effect can be successfully nullified with proper calibration, which would be important for a flight mission. Appendix B contains a study of the extreme tidal disruption event, Swift J1644+57, to search for

  5. Development of a high average current polarized electron source with long cathode operational lifetime

    SciTech Connect

    C. K. Sinclair; P. A. Adderley; B. M. Dunham; J. C. Hansknecht; P. Hartmann; M. Poelker; J. S. Price; P. M. Rutt; W. J. Schneider; M. Steigerwald

    2007-02-01

    Substantially more than half of the electromagnetic nuclear physics experiments conducted at the Continuous Electron Beam Accelerator Facility of the Thomas Jefferson National Accelerator Facility (Jefferson Laboratory) require highly polarized electron beams, often at high average current. Spin-polarized electrons are produced by photoemission from various GaAs-based semiconductor photocathodes, using circularly polarized laser light with photon energy slightly larger than the semiconductor band gap. The photocathodes are prepared by activation of the clean semiconductor surface to negative electron affinity using cesium and oxidation. Historically, in many laboratories worldwide, these photocathodes have had short operational lifetimes at high average current, and have often deteriorated fairly quickly in ultrahigh vacuum even without electron beam delivery. At Jefferson Lab, we have developed a polarized electron source in which the photocathodes degrade exceptionally slowly without electron emission, and in which ion back bombardment is the predominant mechanism limiting the operational lifetime of the cathodes during electron emission. We have reproducibly obtained cathode 1/e dark lifetimes over two years, and 1/e charge density and charge lifetimes during electron beam delivery of over 2?105???C/cm2 and 200 C, respectively. This source is able to support uninterrupted high average current polarized beam delivery to three experimental halls simultaneously for many months at a time. Many of the techniques we report here are directly applicable to the development of GaAs photoemission electron guns to deliver high average current, high brightness unpolarized beams.

  6. Enhancement of emission currents in plasma electron sources based on a low-pressure arc discharge

    NASA Astrophysics Data System (ADS)

    Koval, T. V.; Devyatkov, V. N.; Hung, Nguyen Bao

    2015-11-01

    The paper reports on a theoretical and experimental study of the discharge plasma generation with an enhanced electron emission current in a plasma electron source based on a low-pressure arc discharge with a grid-stabilized plasma emission boundary. The source operates at a pressure in the working chamber of p = 0.02-0.05 Pa (Ar), accelerating voltage of up to Ua = 10 kV, and longitudinal magnetic field for electron beam transport of up to Bz = 0.1 T. The experiments show that in the mode of electron emission from the plasma, the voltage Ud between the cathode and grid electrode changes its sign. The numerical simulation demonstrates that the plasma potential and voltage Ud depend on the electric field penetrating from the acceleration gap into the discharge region through the grid meshes, and on the discharge current, gas pressure, geometric transparency of the grid, and gas kind. It is shown that the main mechanisms responsible for the increase in the discharge current and electron emission current from the plasma are associated with secondary ion-electron emission from the emission electrode and with positive feedback between the region of cathode plasma generation and the channel of electron beam transport.

  7. High current proton source based on ECR discharge sustained by 37.5 GHz gyrotron radiation

    NASA Astrophysics Data System (ADS)

    Skalyga, V.; Izotov, I.; Sidorov, A.; Razin, S.; Zorin, V.; Tarvainen, O.; Koivisto, H.; Kalvas, T.

    2012-10-01

    Formation of hydrogen ion beams with high intensity and low transverse emittance is one of the key challenges in accelerator technology. Present work is devoted to experimental investigation of proton beam production from dense plasma (Ne > 1013 cm-3) of an ECR discharge sustained by 37.5 GHz, 100 kW gyrotron radiation at SMIS 37 facility at IAP RAS. The anticipated advantages of the SMIS 37 gasdynamic ion source over the current state-of-the-art proton source technology based on 2.45 GHz hydrogen discharges are described. Experimental result obtained with different extraction configurations i.e. single- and multi-aperture systems are presented. It was demonstrated that ultra bright proton beam with approximately 4.5 mA current and 0.03 π·mm·mrad normalized emittance can be produced with the single-aperture (1 mm in diameter) extraction, the corresponding brightness being 5 A/(π·mm·mrad)2. For production of high current beams a multi-aperture extractor was used resulting to a record of 200 mA / 1.1 π·mm·mrad normalized emittance proton beam. The species fraction i.e. the ratio of H+ to H2+ current was recorded to be > 90 % for all extraction systems. A possibility of further enhancement of the beam parameters by improvements of the extraction system and its power supply is discussed.

  8. Validation of a quantized-current source with 0.2 ppm uncertainty

    SciTech Connect

    Stein, Friederike; Fricke, Lukas Scherer, Hansjörg; Hohls, Frank Leicht, Christoph; Götz, Martin; Krause, Christian; Behr, Ralf; Pesel, Eckart; Pierz, Klaus; Siegner, Uwe; Ahlers, Franz J.; Schumacher, Hans W.; Drung, Dietmar

    2015-09-07

    We report on high-accuracy measurements of quantized current, sourced by a tunable-barrier single-electron pump at frequencies f up to 1 GHz. The measurements were performed with an ultrastable picoammeter instrument, traceable to the Josephson and quantum Hall effects. Current quantization according to I = ef with e being the elementary charge was confirmed at f = 545 MHz with a total relative uncertainty of 0.2 ppm, improving the state of the art by about a factor of 5. The accuracy of a possible future quantum current standard based on single-electron transport was experimentally validated to be better than the best (indirect) realization of the ampere within the present SI.

  9. High current proton beams production at Simple Mirror Ion Source 37.

    PubMed

    Skalyga, V; Izotov, I; Razin, S; Sidorov, A; Golubev, S; Kalvas, T; Koivisto, H; Tarvainen, O

    2014-02-01

    This paper presents the latest results of high current proton beam production at Simple Mirror Ion Source (SMIS) 37 facility at the Institute of Applied Physics (IAP RAS). In this experimental setup, the plasma is created and the electrons are heated by 37.5 GHz gyrotron radiation with power up to 100 kW in a simple mirror trap fulfilling the ECR condition. Latest experiments at SMIS 37 were performed using a single-aperture two-electrode extraction system. Proton beams with currents up to 450 mA at high voltages below 45 kV were obtained. The maximum beam current density was measured to be 600 mA/cm(2). A possibility of further improvement through the development of an advanced extraction system is discussed. PMID:24593436

  10. CMOS foveal image sensor chip

    NASA Technical Reports Server (NTRS)

    Bandera, Cesar (Inventor); Scott, Peter (Inventor); Sridhar, Ramalingam (Inventor); Xia, Shu (Inventor)

    2002-01-01

    A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

  11. Nanosecond monolithic CMOS readout cell

    DOEpatents

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  12. Spatiotemporal patterns of current source density in the prefrontal cortex of a behaving monkey.

    PubMed

    Sakamoto, Kazuhiro; Kawaguchi, Norihiko; Yagi, Kohei; Mushiake, Hajime

    2015-02-01

    One of the fundamental missions of neuroscience is to explore the input and output properties of neuronal networks to reveal their functional significance. However, it is technically difficult to examine synaptic inputs into neuronal circuits in behaving animals. Here, we conducted current source density (CSD) analysis on local field potentials (LFPs) recorded simultaneously using a multi-contact electrode in the prefrontal cortex (PFC) of a behaving monkey. We observed current sink task-dependent spatiotemporal patterns considered to reflect the synaptic input to neurons adjacent to the recording site. Specifically, the inferior convex current sink in the PFC was dominant during the delay period, whereas the current sink was prominent in the principal sulcus during the sample cue and test cue periods. Surprisingly, sulcus current sink patterns were spatially periodic, which corresponds to the columnar structure suggested by previous anatomical studies. The approaches used in the current study will help to elucidate how the PFC network performs executive functions according to its synaptic input. PMID:25027732

  13. A back-illuminated megapixel CMOS image sensor

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata; Cunningham, Thomas; Nikzad, Shouleh; Hoenk, Michael; Jones, Todd; Wrigley, Chris; Hancock, Bruce

    2005-01-01

    In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.

  14. High-Voltage-Input Level Translator Using Standard CMOS

    NASA Technical Reports Server (NTRS)

    Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

    2011-01-01

    proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors

  15. High current H- ion sources for the large helical device neutral beam injector

    NASA Astrophysics Data System (ADS)

    Oka, Y.; Tsumori, K.; Takeiri, Y.; Kaneko, O.; Osakabe, M.; Asano, E.; Kawamoto, T.; Akiyama, R.

    1998-02-01

    Two large helical device-neutral beam injector (LHD-NBI) ion sources were fabricated and tested in the test stand for producing a beam of 180 keV×40 A with H- ions. They are Cesiated multicusp ion sources with a rectangular discharge chamber and a single stage multihole accelerator. These are scaled up from the 16 A H- ion sources in the National Institute for Fusion Science (NIFS). A plasma source with a high aspect ratio was operated stably with an arc power up to ˜300 kW for 10 s, after balancing of the electron emission from the filaments was made. A satisfactorily dense and uniform plasma without mode flip was produced. Electrons accompanied by H- ions were reduced by an extraction grid with the electron trap, instead of straight holes. The electron beam component caused by the stripping of electrons from H- ions was detected with an array of calorimeters at the bottom of the connecting duct. At the first stage of the test, one of the five segment grids of the accelerator was installed. An H- ion current of 5.5 A with a current density of 27.5 mA/cm2 for 0.6 s was obtained with an arc power of 135 kW with Cs introduction. A high arc power efficiency for H- ions was observed. The intense cusp field is considered to be the important factor to improve this. The beam divergence angle at 10.4 m downstream was ˜10 mrad. Since these results satisfied our design, a full segment accelerator was tested in the next stage. Beam conditioning for five segment grids is underway. So far, an H- current of 21.0 A has been obtained at 106 keV for 0.6 s. As a result, we had good prospects for achieving the full specification of LHD-NBI ion sources, especially for achieving higher current and focused beam as well as for long pulse. The neutral beam injection experiment for the LHD is scheduled to start in the middle of 1998.

  16. High current vacuum-arc ion source for ion implantation and coating deposition technologies

    SciTech Connect

    Ryabchikov, Alexander I.; Ryabchikov, Igor A.; Stepanov, Igor B.; Dektyarev, Sergey V.

    2006-03-15

    This work is devoted to the development and investigation of a high current ion source based on dc vacuum-arc plasma generation. Extraction and acceleration of ion beams are realized in a repetitively pulsed mode with the pulse repetition rate up to 200 pps, the pulse duration up to 400 {mu}s, the accelerating voltage up to 40 kV, and the pulsed ion-beam current up to 2 A. To remove microparticles from the vacuum-arc plasma a straight-line plasma filter is used. Examples of the source use for realization of high-intensity and high-concentration ion implantation regimes including those with formation of doped layers at depths that exceed ion projective range for more than an order of magnitude are presented. At the expense of change in order and intensity of ion and plasma material treatment, the advantage of application of one source for execution of material surface pretreatment and activation regimes, formation of wide transition layers between the substrate and coating, coating deposition, and high-intensity ion mixing using ions of the same type was shown.

  17. Simulation of a distributed current source in a linear format CFA

    NASA Astrophysics Data System (ADS)

    Pearlman, Marcus; Browning, Jim

    2015-11-01

    A fundamental limit on Crossed-Field Amplifiers (CFA) gain is beam to RF power ratio. With too much beam power, the RF signal on the slow wave circuit is ``swamped.'' It is proposed here that a controllable, distributed cathode source can be used to tailor current injection and optimize gain. In this work a linear format CFA with a meander line slow wave circuit is tested experimentally and numerically using Vsim. Simulations of the original design, which operates at 900 MHz, shows < 1dB gain at beam currents >100 mA. This beam current is higher than the capabilities of the Field Emitter Array cathodes available to the group; therefore no experimental gain was observed. To be able to compare simulation to experiment, the CFA model under study was changed to the experiment used at Northeastern University in 1991, which also uses a meander line circuit and an injected beam configuration. Direct comparisons between the simulation and this experiment are performed to validate the model. Additional simulations study the effect of different current distributions on gain, bandwidth, and efficiency. Practical considerations such as how to control the energy of the beam separately from the sole potential in order to minimize lost current to sole are also examined. This research was supported by the Air Force Office of Scientific Research and the department of Electrical and Computer Engineering at Boise State University.

  18. Fundamental performance differences between CMOS and CCD imagers: Part II

    NASA Astrophysics Data System (ADS)

    Janesick, James; Andrews, James; Tower, John; Grygon, Mark; Elliott, Tom; Cheng, John; Lesser, Michael; Pinter, Jeff

    2007-09-01

    A new class of CMOS imagers that compete with scientific CCDs is presented. The sensors are based on deep depletion backside illuminated technology to achieve high near infrared quantum efficiency and low pixel cross-talk. The imagers deliver very low read noise suitable for single photon counting - Fano-noise limited soft x-ray applications. Digital correlated double sampling signal processing necessary to achieve low read noise performance is analyzed and demonstrated for CMOS use. Detailed experimental data products generated by different pixel architectures (notably 3TPPD, 5TPPD and 6TPG designs) are presented including read noise, charge capacity, dynamic range, quantum efficiency, charge collection and transfer efficiency and dark current generation. Radiation damage data taken for the imagers is also reported.

  19. A CMOS image sensor dedicated to medical gamma camera application

    NASA Astrophysics Data System (ADS)

    Salahuddin, Nur S.; Paindavoine, Michel; Ginhac, Dominique; Parmentier, Michel; Tamda, Najia

    2005-03-01

    Generally, medical Gamma Camera are based on the Anger principle. These cameras use a scintillator block coupled to a bulky array of photomultiplier tube (PMT). To simplify this, we designed a new integrated CMOS image sensor in order to replace bulky PMT photodetetors. We studied several photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Mikro Systeme (AMS). Each sensor pixel in the array occupies respectively, 1mm x 1mm area, 0.5mm x 0.5mm area and 0.2mm 0.2mm area with fill factor 98 % and total chip area is 2 square millimeters. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low green light emitting diode (less than 0.5 lux) . These results allow to use our sensor in new Gamma Camera solid-state concept.

  20. The neutral current sheet and its radiation pairs of side sources in coronal mass ejections

    NASA Astrophysics Data System (ADS)

    Ji, Shu-Chen

    Using the data observed with the soft X-ray telescope, hard X-ray telescope aboard on Yohkoh and the Nobeyama Radioheliograph on 1998 April 23, a comprehensive study on soft X-ray coronal mass ejection (SXRCME) and radio Type IV burst is carried out and some significant results are obtained as follows: A magnetic capacity belt (MCB) between two magnetic dipole sources (MDSs) was found and there were only a few activitation sources (ASs). During the MCB changed into a magnetic energy belt (MEB) by the ASs, activating energy and shining material both concentrated to the neutral current sheet (NCS) in the course of its formation. When two MDSs were put through by the MEB, the NCS formed and the SXRCME occurred. The matter ejected not only from the NCS, but also from the whole MEB. The expanding loop of the SXRCME had two foot points, both were just two MDSs. The head of the expanding loop always tended to the foot point of the weak source, because it was equilibrium point of magnetic pressures coming from two foot points. For this reason, its locus was neutral line. From this, the neutral line can also determine the position of NCS. Finally, the radiation pairs of side sources of NCS on the MEB are found.

  1. Leakage current reduction in junctionless tunnel FET using a lightly doped source

    NASA Astrophysics Data System (ADS)

    Basak, Shibir; Asthana, Pranav Kumar; Goswami, Yogesh; Ghosh, Bahniman

    2015-03-01

    In this paper, we explain the problem of dramatic OFF-state leakage in junctionless tunnel field effect transistor (JLTFET) for a channel thickness greater than 10 nm. In JLTFET, with channel width greater than 10 nm, the depletion region primarily remains confined below the dielectric-semiconductor interface. Hence, we tend to incur significant leakage through the center of the device. With the help of 2D device simulations, we demonstrate that the cause of the leakage current is predominantly due to thermal injection in the source region and is concentrated through the center of the device. We suggest a technique of using a lightly doped source region, below the p-gate to increase the barrier and prevent any leakage. The proposed alteration records an improved I ON/ I OFF ratio for JLTFET for a channel of width 20 nm.

  2. Measurement of Turbulence with Acoustic Doppler Current Profilers - Sources of Error and Laboratory Results

    USGS Publications Warehouse

    Nystrom, E.A.; Oberg, K.A.; Rehmann, C.R.

    2002-01-01

    Acoustic Doppler current profilers (ADCPs) provide a promising method for measuring surface-water turbulence because they can provide data from a large spatial range in a relatively short time with relative ease. Some potential sources of errors in turbulence measurements made with ADCPs include inaccuracy of Doppler-shift measurements, poor temporal and spatial measurement resolution, and inaccuracy of multi-dimensional velocities resolved from one-dimensional velocities measured at separate locations. Results from laboratory measurements of mean velocity and turbulence statistics made with two pulse-coherent ADCPs in 0.87 meters of water are used to illustrate several of inherent sources of error in ADCP turbulence measurements. Results show that processing algorithms and beam configurations have important effects on turbulence measurements. ADCPs can provide reasonable estimates of many turbulence parameters; however, the accuracy of turbulence measurements made with commercially available ADCPs is often poor in comparison to standard measurement techniques.

  3. X-ray framing camera for pulsed, high current, electron beam x-ray sources

    NASA Astrophysics Data System (ADS)

    Failor, B. H.; Rodriguez, J. C.; Riordan, J. C.; Lojewski, D. Y.

    2007-07-01

    High power x-ray sources built for nuclear weapons effects testing are evolving toward larger overall diameters and smaller anode cathode gaps. We describe a framing camera developed to measure the time-evolution of these 20-50 ns pulsed x-ray sources produced by currents in the 1.5-2.5 MA range and endpoint voltages between 0.2 and 1.5 MV. The camera has up to 4 frames with 5 ns gate widths; the frames are separated by 5 ns. The image data are recorded electronically with a gated intensified CCD camera and the data are available immediately following a shot. A fast plastic scintillator (2.1 ns decay time) converts the x-rays to visible light and, for high sensitivity, a fiber optic imaging bundle carries the light to the CCD input. Examples of image data are shown.

  4. PIG Ion Source with Permanent Magnets: Model Based Anode Current Return Circuit

    NASA Astrophysics Data System (ADS)

    Babapour Ghadikolaee, Mohammad Reza

    2012-12-01

    Ion sources are widely used in fusion technologies. A new high voltage pulsed power supply for use in penning ion gauge ion sources is proposed in this paper. To use discharge current, a diode-capacitor bank is included. The power supply is composed of 3 stages. A fast switching transistor is used as a single switch which is trigged by a pulse generator. A transformer is used to level up the voltage up to 2 kV without power loss. It is also used to isolate input and high voltage output. Also; the proposed high voltage power supply implementation uses a diode-capacitor bank whose capacitors are charged during plasma discharge. This system structure gives compactness and easiness to implement the total system which in combination with inexpensive commercially available components, makes the unit versatile and inexpensive.

  5. Accelerated life testing effects on CMOS microcircuit characteristics

    NASA Technical Reports Server (NTRS)

    1977-01-01

    Accelerated life tests were performed on CMOS microcircuits to predict their long term reliability. The consistency of the CMOS microcircuit activation energy between the range of 125 C to 200 C and the range 200 C to 250 C was determined. Results indicate CMOS complexity and the amount of moisture detected inside the devices after testing influences time to failure of tested CMOS devices.

  6. A CCD/CMOS process for integrated image acquisition and early vision signal processing

    NASA Astrophysics Data System (ADS)

    Keast, Craig L.; Sodini, Charles G.

    The development of technology which integrates a four phase, buried-channel CCD in an existing 1.75 micron CMOS process is described. The four phase clock is employed in the integrated early vision system to minimize process complexity. Signal corruption is minimized and lateral fringing fields are enhanced by burying the channel. The CMOS process for CCD enhancement is described, which highlights a new double-poly process and the buried channel, and the integration is outlined. The functionality and transfer efficiency of the process enhancement were appraised by measuring CCD shift registers at 100 kHz. CMOS measurement results are presented, which include threshold voltages, poly-to-poly capacitor voltage and temperature coefficients, and dark current. A CCD/CMOS processor is described which combines smoothing and segmentation operations. The integration of the CCD and the CMOS processes is found to function due to the enhancement-compatible design of the CMOS process and the thorough employment of CCD module baseline process steps.

  7. Reprint of: High current liquid metal ion source using porous tungsten multiemitters.

    PubMed

    Tajmar, M; Vasiljevich, I; Grienauer, W

    2011-05-01

    We recently developed an indium Liquid-Metal-Ion-Source that can emit currents from sub-μA up to several mA. It is based on a porous tungsten crown structure with 28 individual emitters, which is manufactured using Micro-Powder Injection Molding (μPIM) and electrochemical etching. The emitter combines the advantages of internal capillary feeding with excellent emission properties due to micron-size tips. Significant progress was made on the homogeneity of the emission over its current-voltage characteristic as well as on investigating its long-term stability. This LMIS seems very suitable for space propulsion as well as for micro/nano manufacturing applications with greatly increased milling/drilling speeds. This paper summarizes the latest developments on our porous multiemitters with respect to manufacturing, emission properties and long-term testing. PMID:21288642

  8. Numerical studies of the flux-to-current ratio method in the KIPT neutron source facility

    SciTech Connect

    Cao, Y.; Gohar, Y.; Zhong, Z.

    2013-07-01

    The reactivity of a subcritical assembly has to be monitored continuously in order to assure its safe operation. In this paper, the flux-to-current ratio method has been studied as an approach to provide the on-line reactivity measurement of the subcritical system. Monte Carlo numerical simulations have been performed using the KIPT neutron source facility model. It is found that the reactivity obtained from the flux-to-current ratio method is sensitive to the detector position in the subcritical assembly. However, if multiple detectors are located about 12 cm above the graphite reflector and 54 cm radially, the technique is shown to be very accurate in determining the k{sub eff} this facility in the range of 0.75 to 0.975. (authors)

  9. Transverse distribution of beam current oscillations of a 14 GHz electron cyclotron resonance ion source.

    PubMed

    Tarvainen, O; Toivanen, V; Komppula, J; Kalvas, T; Koivisto, H

    2014-02-01

    The temporal stability of oxygen ion beams has been studied with the 14 GHz A-ECR at JYFL (University of Jyvaskyla, Department of Physics). A sector Faraday cup was employed to measure the distribution of the beam current oscillations across the beam profile. The spatial and temporal characteristics of two different oscillation "modes" often observed with the JYFL 14 GHz ECRIS are discussed. It was observed that the low frequency oscillations below 200 Hz are distributed almost uniformly. In the high frequency oscillation "mode," with frequencies >300 Hz at the core of the beam, carrying most of the current, oscillates with smaller amplitude than the peripheral parts of the beam. The results help to explain differences observed between the two oscillation modes in terms of the transport efficiency through the JYFL K-130 cyclotron. The dependence of the oscillation pattern on ion source parameters is a strong indication that the mechanisms driving the fluctuations are plasma effects. PMID:24593488

  10. Reduction of beam current noise in the FNAL magnetron ion source

    SciTech Connect

    Bollinger, D. S. Karns, P. R. Tan, C. Y.

    2015-04-08

    The new FNAL Injector Line with a circular dimple magnetron ion source has been operational since December of 2012. Since the new injector came on line there have been variations in the H- beam current flattop observed near the downstream end of the Linac. Several different cathode geometries including a hollow cathode suggested by Dudnikov [1] were tried. Previous studies also showed that different mixtures of hydrogen and nitrogen had an effect on beam current noise [2]. We expanded on those studies by trying mixtures ranging from (0.25% nitrogen, 99.75% hydrogen) to (3% nitrogen, 97% hydrogen). The results of these studies in our test stand will be presented in this paper.

  11. Simulation-Based Validation for Four-Dimensional Multi-Channel Ultrasound Current Source Density Imaging

    PubMed Central

    Wang, Zhaohui; Witte, Russell S.

    2015-01-01

    Ultrasound current source density imaging (UCSDI), which has application to the heart and brain, exploits the acoustoelectric (AE) effect and Ohm's law to detect and map an electrical current distribution. In this study, we describe 4-D UCSDI simulations of a dipole field for comparison and validation with bench-top experiments. The simulations consider the properties of the ultrasound pulse as it passes through a conductive medium, the electric field of the injected dipole, and the lead field of the detectors. In the simulation, the lead fields of detectors and electric field of the dipole were calculated by the finite element (FE) method, and the convolution and correlation in the computation of the detected AE voltage signal were accelerated using 3-D fast Fourier transforms. In the bench-top experiment, an electric dipole was produced in a bath of 0.9% NaCl solution containing two electrodes, which injected an ac pulse (200 Hz, 3 cycles) ranging from 0 to 140 mA. Stimulating and recording electrodes were placed in a custom electrode chamber made on a rapid prototype printer. Each electrode could be positioned anywhere on an x-y grid (5 mm spacing) and individually adjusted in the depth direction for precise control of the geometry of the current sources and detecting electrodes. A 1-MHz ultrasound beam was pulsed and focused through a plastic film to modulate the current distribution inside the saline-filled tank. AE signals were simultaneously detected at a sampling frequency of 15 MHz on multiple recording electrodes. A single recording electrode is sufficient to form volume images of the current flow and electric potentials. The AE potential is sensitive to the distance from the dipole, but is less sensitive to the angle between the detector and the dipole. Multi-channel UCSDI potentially improves 4-D mapping of bioelectric sources in the body at high spatial resolution, which is especially important for diagnosing and guiding treatment of cardiac and

  12. Simulation-based validation for four- dimensional multi-channel ultrasound current source density imaging.

    PubMed

    Wang, Zhaohui; Witte, Russell S

    2014-03-01

    Ultrasound current source density imaging (UCSDI), which has application to the heart and brain, exploits the acoustoelectric (AE) effect and Ohm's law to detect and map an electrical current distribution. In this study, we describe 4-D UCSDI simulations of a dipole field for comparison and validation with bench-top experiments. The simulations consider the properties of the ultrasound pulse as it passes through a conductive medium, the electric field of the injected dipole, and the lead field of the detectors. In the simulation, the lead fields of detectors and electric field of the dipole were calculated by the finite element (FE) method, and the convolution and correlation in the computation of the detected AE voltage signal were accelerated using 3-D fast Fourier transforms. In the bench-top experiment, an electric dipole was produced in a bath of 0.9% NaCl solution containing two electrodes, which injected an ac pulse (200 Hz, 3 cycles) ranging from 0 to 140 mA. Stimulating and recording electrodes were placed in a custom electrode chamber made on a rapid prototype printer. Each electrode could be positioned anywhere on an x-y grid (5 mm spacing) and individually adjusted in the depth direction for precise control of the geometry of the current sources and detecting electrodes. A 1-MHz ultrasound beam was pulsed and focused through a plastic film to modulate the current distribution inside the saline-filled tank. AE signals were simultaneously detected at a sampling frequency of 15 MHz on multiple recording electrodes. A single recording electrode is sufficient to form volume images of the current flow and electric potentials. The AE potential is sensitive to the distance from the dipole, but is less sensitive to the angle between the detector and the dipole. Multi-channel UCSDI potentially improves 4-D mapping of bioelectric sources in the body at high spatial resolution, which is especially important for diagnosing and guiding treatment of cardiac and

  13. Density currents in the Chicago River: characterization, effects on water quality, and potential sources.

    PubMed

    Jackson, P Ryan; García, Carlos M; Oberg, Kevin A; Johnson, Kevin K; García, Marcelo H

    2008-08-15

    Bidirectional flows in a river system can occur under stratified flow conditions and in addition to creating significant errors in discharge estimates, the upstream propagating currents are capable of transporting contaminants and affecting water quality. Detailed field observations of bidirectional flows were made in the Chicago River in Chicago, Illinois in the winter of 2005-06. Using multiple acoustic Doppler current profilers simultaneously with a water-quality profiler, the formation of upstream propagating density currents within the Chicago River both as an underflow and an overflow was observed on three occasions. Density differences driving the flow primarily arise from salinity differences between intersecting branches of the Chicago River, whereas water temperature is secondary in the creation of these currents. Deicing salts appear to be the primary source of salinity in the North Branch of the Chicago River, entering the waterway through direct runoff and effluent from a wastewater-treatment plant in a large metropolitan area primarily served by combined sewers. Water-quality assessments of the Chicago River may underestimate (or overestimate) the impairment of the river because standard water-quality monitoring practices do not account for density-driven underflows (or overflows). Chloride concentrations near the riverbed can significantly exceed concentrations at the river surface during underflows indicating that full-depth parameter profiles are necessary for accurate water-quality assessments in urban environments where application of deicing salt is common. PMID:18499229

  14. Investigation of helium ion production in constricted direct current plasma ion source with layered-glows

    SciTech Connect

    Lee, Yuna; Chung, Kyoung-Jae; Park, Yeong-Shin; Hwang, Y. S.

    2014-02-15

    Generation of helium ions is experimentally investigated with a constricted direct current (DC) plasma ion source operated at layered-glow mode, in which electrons could be accelerated through multiple potential structures so as to generate helium ions including He{sup 2+} by successive ionization collisions in front of an extraction aperture. The helium discharge is sustained with the formation of a couple of stable layers and the plasma ball with high density is created near the extraction aperture at the operational pressure down to 0.6 Torr with concave cathodes. The ion beam current extracted with an extraction voltage of 5 kV is observed to be proportional to the discharge current and inversely proportional to the operating pressure, showing high current density of 130 mA/cm{sup 2} and power density of 0.52 mA/cm{sup 2}/W. He{sup 2+} ions, which were predicted to be able to exist due to multiple-layer potential structure, are not observed. Simple calculation on production of He{sup 2+} ions inside the plasma ball reveals that reduced operating pressure and increased cathode area will help to generate He{sup 2+} ions with the layered-glow DC discharge.

  15. On the problems of stability and durability of field-emission current sources for electrovacuum devices

    NASA Astrophysics Data System (ADS)

    Yakunin, Alexander N.; Aban'shin, Nikolay P.; Akchurin, Garif G.; Akchurin, Georgy G.; Avetisyan, Yuri A.

    2016-03-01

    The results of the practical implementation of the concept of field-emission current source with high average current density of 0.1-0.3 A-cm-2 are shown. The durability of cathode samples at a level of 6000 hours is achieved under conditions of technical vacuum. A phenomenological model is suggested that describes the tunneling of both equilibrium and nonequilibrium electrons in a vacuum from the zone of concentration of electrostatic field. Conditions are discussed as the resulting increase in the emission current due to the connection mechanism of the photoelectric effect is thermodynamically favorable, that is not accompanied by an undesirable increase in the temperature of the local emission zone. It is shown that to ensure stability and durability of the cathode is also important to limit the concentration of equilibrium carriers using composite structures «DLC film on Mo substrate." This helps to reduce the criticality of the CVC. A possible alternative is to use a restrictive resistance in the cathode. However, this increases the heat losses and thus decreases assembly efficiency. The results of experimental studies of the structure showing the saturation of photoemission current component with an increase in operating voltage. This fact suggests the existence of an effective mechanism for control of emission at constant operating voltage. This is fundamentally important for the stabilization of field emission cathode, providing a reliability and durability. The single-photon processes and the small thickness DLC films (15-20 nm) provide high-speed process of control.

  16. Investigation of helium ion production in constricted direct current plasma ion source with layered-glows.

    PubMed

    Lee, Yuna; Chung, Kyoung-Jae; Park, Yeong-Shin; Hwang, Y S

    2014-02-01

    Generation of helium ions is experimentally investigated with a constricted direct current (DC) plasma ion source operated at layered-glow mode, in which electrons could be accelerated through multiple potential structures so as to generate helium ions including He(2+) by successive ionization collisions in front of an extraction aperture. The helium discharge is sustained with the formation of a couple of stable layers and the plasma ball with high density is created near the extraction aperture at the operational pressure down to 0.6 Torr with concave cathodes. The ion beam current extracted with an extraction voltage of 5 kV is observed to be proportional to the discharge current and inversely proportional to the operating pressure, showing high current density of 130 mA/cm(2) and power density of 0.52 mA/cm(2)/W. He(2+) ions, which were predicted to be able to exist due to multiple-layer potential structure, are not observed. Simple calculation on production of He(2+) ions inside the plasma ball reveals that reduced operating pressure and increased cathode area will help to generate He(2+) ions with the layered-glow DC discharge. PMID:24593635

  17. Density currents in the Chicago River: Characterization, effects on water quality, and potential sources

    USGS Publications Warehouse

    Jackson, P.R.; Garcia, C.M.; Oberg, K.A.; Johnson, K.K.; Garcia, M.H.

    2008-01-01

    Bidirectional flows in a river system can occur under stratified flow conditions and in addition to creating significant errors in discharge estimates, the upstream propagating currents are capable of transporting contaminants and affecting water quality. Detailed field observations of bidirectional flows were made in the Chicago River in Chicago, Illinois in the winter of 2005-06. Using multiple acoustic Doppler current profilers simultaneously with a water-quality profiler, the formation of upstream propagating density currents within the Chicago River both as an underflow and an overflow was observed on three occasions. Density differences driving the flow primarily arise from salinity differences between intersecting branches of the Chicago River, whereas water temperature is secondary in the creation of these currents. Deicing salts appear to be the primary source of salinity in the North Branch of the Chicago River, entering the waterway through direct runoff and effluent from a wastewater-treatment plant in a large metropolitan area primarily served by combined sewers. Water-quality assessments of the Chicago River may underestimate (or overestimate) the impairment of the river because standard water-quality monitoring practices do not account for density-driven underflows (or overflows). Chloride concentrations near the riverbed can significantly exceed concentrations at the river surface during underflows indicating that full-depth parameter profiles are necessary for accurate water-quality assessments in urban environments where application of deicing salt is common.

  18. Red Sea Intermediate Water in the source regions of the Agulhas Current

    NASA Astrophysics Data System (ADS)

    Roman, R. E.; Lutjeharms, J. R. E.

    2009-06-01

    Red Sea Intermediate Water (RSIW) has been shown to move down the Agulhas Current as distinct lenses. It has been assumed that this intermittency is the result of variable input. To clarify and quantify the nature of RSIW contributions from the source regions of the Agulhas Current observations at 15 hydrographic sections were examined using a multi-parameter analysis. In the northern Mozambique Channel RSIW is found to be layer-like, but with patches of distinctly different contributions. In the southern part of the channel the layer-like distribution disappears with RSIW mostly confined within anticyclonic and cyclonic eddies exhibiting varying maximum contributions ranging from 15-20% to 25-30% purity. Net transports across the channel ranged from -0.45 to -0.7 Sv. At the southern tip of Madagascar RSIW contributions exhibited similar purity variability ranging from 10-15% to 15-20%. The net southward transport of RSIW in the East Madagascar Current displayed an even greater variability due to changes in the flux of the undercurrent ranging from negligible to -0.3 Sv. Indications therefore were that the transport of RSIW to the Agulhas Current occurs in both cyclones and anti-cyclones through the Mozambique Channel whilst from the East Madagascar Current it is mostly confined to anti-cyclones. This variability in the inflow was also reflected in the northern part of the Agulhas Current proper. The maximum contributions of RSIW range here from 10-15% to 20-25% purity and net transports from -0.75 to -1.39 Sv off Durban. As it was east of Madagascar RSIW was mostly confined to the slope.

  19. Role of Plasma Sheet Source Population in Ring Current Dynamics (Invited)

    NASA Astrophysics Data System (ADS)

    Jordanova, V.; Yu, Y.; Reeves, G. D.; Kletzing, C.; Spence, H.; Sazykin, S. Y.

    2013-12-01

    Understanding the dynamics of ring current particles during disturbed conditions remains a long-standing challenge, moreover these particles represent a seed population for the hazardous radiation belts. The formation of the storm-time ring current depends on two main factors: 1) the plasma sheet as a reservoir supplying particles that are transported earthward, and 2) the electric field as a mechanism that energizes them. To investigate ring current development on a global scale, we use our four-dimensional (4-D) ring current-atmosphere interactions model (RAM-SCB) [Jordanova et al., 2010; Zaharia et al., 2010] which solves the kinetic equation for H+, O+, and He+ ions and electrons using a self-consistently calculated magnetic field in force balance with the anisotropic ring current plasma pressure. The model boundary was recently expanded from geosynchronous orbit to 9 RE, where the plasma boundary conditions are specified from the empirical plasma sheet model TM03 [Tsyganenko and Mukai, 2003] based on Geotail data. We simulate the transport, acceleration, and loss of energetic particles from the magnetotail to the inner magnetosphere during several geomagnetic storms that occurred since the launch of the Van Allen Probes in August 2012. We compare our results with simultaneous plasma and field observations from the Energetic particle, Composition, and Thermal plasma (ECT) [Spence et al., 2013] and the Electric and Magnetic Field Instrument Suite and Integrated Science (EMFISIS) [Kletzing et al., 2013] investigations on the Van Allen Probes. We investigate the role of the plasma sheet source population in global ring current simulations considering various boundary conditions and electric field formulations. An improved understanding of the highly coupled inner magnetosphere system is provided.

  20. The solar wind pressure pulse as a ring current source in the disturbed magnetosphere

    NASA Astrophysics Data System (ADS)

    Kalegaev, Vladimir; Vlasova, Natalia; Nazarkov, Ilya

    2016-07-01

    The solar wind pressure and IMF are the most important factors of interplanetary medium disturbing the Earth's magnetosphere. They determine the momentum/energy transfer inside the magnetopause. The relative dynamics of solar wind pressure and IMF controls the development of the different storm-time magnetospheric currents during disturbances. While the southward turning of IMF is well-known magnetic storm source, the role of the strong pressure pulse under northward IMF is not enough studied. We present the results of studying the solar wind pressure influence on the magnetospheric structure during events on 21-22 January 2005 and 22-23 June 2015 when the main phase of geomagnetic storms developed under IMF Bz>0. Joint analysis of experimental and modeling data was carried out. Equatorial ion fluxes of 30-80 keV protons of the storm time equatorial belt (STEB) measured by low-altitude polar sun-synchronous NOAA POES satellites were used to estimate the ring current evolution. The magnetic field of the large-scale magnetospheric currents was calculated in terms of the paraboloid model of the magnetospheric geomagnetic field A2000. It was found that ring current development during the early main phase of the magnetic storms was provided not only large-scale magnetospheric convection but also by extremely strong solar wind dynamical impact. Interplanetary shock caused intensive trapped particle non-adiabatic radial motion to the lover L-shells during SSC and subsequent ring current enhancement similar to that taking place due to particle injection from the tail. The extreme solar wind pressure pulse can produce the ring current enhancement even under the northward orientation of the interplanetary magnetic field.

  1. Current status of new SAGE project with 51Cr neutrino source

    NASA Astrophysics Data System (ADS)

    Gavrin, V.; Cleveland, B.; Danshin, S.; Elliott, S.; Gorbachev, V.; Ibragimova, T.; Kalikhov, A.; Knodel, T.; Kozlova, Yu.; Malyshkin, Yu.; Matveev, V.; Mirmov, I.; Nico, J.; Robertson, R. G. H.; Shikhin, A.; Sinclair, D.; Veretenkin, E.; Wilkerson, J.

    2015-03-01

    A very short-baseline neutrino oscillation experiment with an intense 51Cr neutrino source is currently under construction at the Baksan Neutrino Observatory of the Institute for Nuclear Research RAS (BNO). The experiment, which is based on the existing SAGE experiment, will use an upgraded Gallium-Germanium Neutrino Telescope (GGNT) and an artificial 51Cr neutrino source with activity ˜3 MCi to search for transitions of active neutrinos to sterile states with Δ m 2 ˜1 eV2. The neutrino source will be placed in the center of a liquid Ga metal target that is divided into two concentric zones, internal and external. The average path length of neutrinos in each zone will be the same and the neutrino capture rate will be measured separately in each zone. The oscillation signature, which comes from the ratio of events in the near and far gallium volumes, will be largely free of systematic errors, such as may occur from cross section and source strength uncertainties, and will provide a clean signal of electron neutrino disappearance into a sterile state at baselines of about 0.6 and 2.0 m. The sensitivity to the disappearance of electron neutrinos is expected to be a few percent. Construction of this set of new facilities, including a two-zone tank for irradiation of 50 tons of Ga metal with the intense 51Cr source, as well as additional modules of the GGNT counting and extraction systems, is close to completion. To check the new facilities they will first be used for SAGE solar neutrino measurements.

  2. Carbon Nanotube Integration with a CMOS Process

    PubMed Central

    Perez, Maximiliano S.; Lerner, Betiana; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Julian, Pedro M.; Mandolesi, Pablo S.; Buffa, Fabian A.; Boselli, Alfredo; Lamagna, Alberto

    2010-01-01

    This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. PMID:22319330

  3. Beam current improvement and source life performance of diboron tetrafluoride (B{sub 2}F{sub 4}) for boron implantation on applied materials VIISta high current implanters

    SciTech Connect

    Tang Ying; Bassom, Neil J.; Young, James; Sweeney, Joseph; Ray, Richard

    2012-11-06

    High dose p-type boron doping is a significant productivity challenge for conventional beamline ion implant tools in semiconductor wafer fabrication. Currently, the primary feed gas for boron implantation is boron trifluoride, BF{sub 3}. This paper discusses the testing performed on Applied Materials VIISta high current implanters using diboron tetrafluoride, B{sub 2}F{sub 4}, as an alternative gaseous boron source material that can be a replacement for BF{sub 3}. Both the beam current and source life for B{sub 2}F{sub 4} were evaluated. B{sub 2}F{sub 4} enables a significant beam current improvement over BF{sub 3} while maintaining good source life, beam stability, and a high automatic beam setup success rate.

  4. Characterization of a CMOS detector for limited-view mammography

    NASA Astrophysics Data System (ADS)

    Elbakri, Idris A.

    2007-03-01

    Sensors based on complementary metal oxide semiconductors (CMOS) technology have recently been considered for mammography applications. CMOS offers the advantages of lower cost and relative ease of fabrications. We report on the evaluation of a CMOS imager (C9730DK, Hamamatsu Corporation) with 14-bit digitization and 50-micron detector element (del) resolution. The imager has an active area of 5 x 5 cm and uses 160-micron layer of needle-crystal CsI (55 mg/cc) to convert x-rays to light. The detector is suitable for spot and specimen imaging and image-guided biopsy. To evaluate resolution performance, we measured the modulation transfer function (MTF) using the slanted edge method. We also measured the normalized noise power spectrum (NNPS) using Fourier analysis of uniform images. The MTF and NNPS were used to determine the detective quantum efficiency (DQE) of the detector. The detector was characterized using a molybdenum target/molybdenum filter mammography x-ray source operated at 28 kVp with 44mm of PMMA added to mimic clinical beam quality (HVL = 0.62 mm Al). Our analysis showed that the imager had a linear response. The MTF was 28% at 5 lp/mm and 8% at 10 lp/mm. The product of the NNPS and exposure showed that the detector was quantum limited. The DQE near 0 lp/mm was in the 55-60% range. The DQE and MTF performance of the CMOS detector are comparable to published values for other digital mammography detectors.

  5. Flexible polyimide microelectrode array for in vivo recordings and current source density analysis.

    PubMed

    Cheung, Karen C; Renaud, Philippe; Tanila, Heikki; Djupsund, Kaj

    2007-03-15

    This work presents implantable, flexible polymer-based probes with embedded microelectrodes for acute and chronic neural recordings in vivo, as tested on rodents. Acute recordings using this array were done in mice under urethane anesthesia and compared to those made using silicon-based probes manufactured at the Center for Neural Communication Technology, University of Michigan. The two electrode arrays yielded similar results. Recordings with chronically implanted polymer-based electrodes were performed for 60 days post-surgically in awake, behaving rats. The microelectrodes were used to monitor local field potentials and capture laminar differences in function of cortex and hippocampus, and produced response waveforms of undiminished amplitude and signal-to-noise ratios 8 weeks after chronic implantation. The polymer-based electrodes could also be connected to a lesion current to mark specific locations in the tissue. Current source density (CSD) analysis from the recordings depicted a source - sink-composition. Tissue response was assessed 8 weeks after insertion by immunochemical labeling with glial fibrillary acidic protein (GFAP) to identify astrocytes, and histological analysis showed minimal tissue reaction to the implanted structures. PMID:17027251

  6. Localization of single-cell current sources based on extracellular potential patterns: the spike CSD method.

    PubMed

    Somogyvári, Zoltán; Cserpán, Dorottya; Ulbert, István; Erdi, Péter

    2012-11-01

    Traditional current source density (tCSD) calculation method calculates neural current source distribution of extracellular (EC) potential patterns, thus providing important neurophysiological information. While the tCSD method is based on physical principles, it adopts some assumptions, which can not hold for single-cell activity. Consequently, tCSD method gives false results for single-cell activity. A new, spike CSD (sCSD) method has been developed, specifically designed to reveal CSD distribution of single cells during action potential generation. This method is based on the inverse solution of the Poisson-equation. The efficiency of the method is tested and demonstrated with simulations, and showed, that the sCSD method reconstructed the original CSD more precisely than the tCSD. The sCSD method is applied to EC spatial potential patterns of spikes, measured in cat primary auditory cortex with a 16-channel chronically implanted linear probe in vivo. Using our method, the cell-electrode distances were estimated and the spatio-temporal CSD distributions were reconstructed. The results suggested, that the new method is potentially useful in determining fine details of the spatio-temporal dynamics of spikes. PMID:22934892

  7. Municipal solid waste (MSW) as a renewable source of energy: current and future practices in China.

    PubMed

    Cheng, Hefa; Hu, Yuanan

    2010-06-01

    With rapid economic growth and massive urbanization, China faces the problem of municipal solid waste (MSW) disposal and the pressing need for development of alternative energy. Waste-to-energy (WTE) incineration, which recovers energy from discarded MSW and produces electricity and/or steam for heating, is recognized as a renewable source of energy and is playing an increasingly important role in MSW management in China. This article provides an overview of the WTE industry, discusses the major challenges in expanding WTE incineration in China, namely, high capital and operational costs, equipment corrosion, air pollutant emissions, and fly ash disposal. A perspective on MSW as a renewable energy source in China is also presented. Currently, only approximately 13% of MSW generated in China is disposed in WTE facilities. With the significant benefits of environmental quality, the reduction of greenhouse gas (GHG) emissions, and government policies and financial incentives as a renewable energy source, WTE incineration industry is expected to experience significant growth in the coming decade and make greater contribution to supplying renewable energy in China. PMID:20137912

  8. A Glucose Biosensor Using CMOS Potentiostat and Vertically Aligned Carbon Nanofibers.

    PubMed

    Al Mamun, Khandaker A; Islam, Syed K; Hensley, Dale K; McFarlane, Nicole

    2016-08-01

    This paper reports a linear, low power, and compact CMOS based potentiostat for vertically aligned carbon nanofibers (VACNF) based amperometric glucose sensors. The CMOS based potentiostat consists of a single-ended potential control unit, a low noise common gate difference-differential pair transimpedance amplifier and a low power VCO. The potentiostat current measuring unit can detect electrochemical current ranging from 500 nA to 7 [Formula: see text] from the VACNF working electrodes with high degree of linearity. This current corresponds to a range of glucose, which depends on the fiber forest density. The potentiostat consumes 71.7 [Formula: see text] of power from a 1.8 V supply and occupies 0.017 [Formula: see text] of chip area realized in a 0.18 [Formula: see text] standard CMOS process. PMID:27337723

  9. Current density distributions and sputter marks in electron cyclotron resonance ion sources

    SciTech Connect

    Panitzsch, Lauri; Peleikis, Thies; Boettcher, Stephan; Stalder, Michael; Wimmer-Schweingruber, Robert F.

    2013-01-15

    Most electron cyclotron resonance ion sources use hexapolar magnetic fields for the radial confinement of the plasma. The geometry of this magnetic structure is then-induced by charged particles-mapped onto the inner side of the plasma electrode via sputtering and deposition. The resulting structures usually show two different patterns: a sharp triangular one in the central region which in some cases is even sputtered deep into the material (referred to as thin groove or sharp structure), and a blurred but still triangular-like one in the surroundings (referred to as broad halo). Therefore, both patterns seem to have different sources. To investigate their origins we replaced the standard plasma electrode by a custom-built plasma electrode acting as a planar, multi-segment current-detector. For different biased disc voltages, detector positions, and source biases (referred to the detector) we measured the electrical current density distributions in the plane of the plasma electrode. The results show a strong and sharply confined electron population with triangular shape surrounded by less intense and spatially less confined ions. Observed sputter- and deposition marks are related to the analysis of the results. Our measurements suggest that the two different patterns (thin and broad) indeed originate from different particle populations. The thin structures seem to be caused by the hot electron population while the broad marks seem to stem from the medium to highly charged ions. In this paper we present our measurements together with theoretical considerations and substantiate the conclusions drawn above. The validity of these results is also discussed.

  10. A high fill-factor low dark leakage CMOS image sensor with shared-pixel design

    NASA Astrophysics Data System (ADS)

    Seo, Min-Woong; Yasutomi, Keita; Kagawa, Keiichiro; Kawahito, Shoji

    2014-03-01

    We have developed and evaluated the high responsivity and low dark leakage CMOS image sensor with the ring-gate shared-pixel design. A ring-gate shared-pixel design with a high fill factor makes it possible to achieve the low-light imaging. As eliminating the shallow trench isolation in the proposed pixel, the dark leakage current is significantly decreased because one of major dark leakage sources is removed. By sharing the in-pixel transistors such as a reset transistor, a select transistor, and a source follower amplifier, each pixel has a high fill-factor of 43 % and high sensitivity of 144.6 ke-/lx·sec. In addition, the effective number of transistors per pixel is 1.75. The proposed imager achieved the relatively low dark leakage current of about 104.5 e-/s (median at 60°C), corresponding to a dark current density Jdark_proposed of about 30 pA/cm2. In contrast, the conventional type test pixel has a large dark leakage current of 2450 e-/s (median at 60°C), corresponding to Jdark_conventional of about 700 pA/cm2. Both pixels have a same pixel size of 7.5×7.5 μm2 and are fabricated in same process.

  11. Biosensing with integrated CMOS nanopores

    NASA Astrophysics Data System (ADS)

    Uddin, Ashfaque; Yemenicioglu, Sukru; Chen, Chin-Hsuan; Corgliano, Ellie; Milaninia, Kaveh; Xia, Fan; Plaxco, Kevin; Theogarajan, Luke

    2012-10-01

    This paper outlines our recent efforts in using solid-state nanopores as a biosensing platform. Traditionally biosensors concentrate mainly on the detection platform and not on signal processing. This decoupling can lead to inferior sensors and is exacerbated in nanoscale devices, where device noise is large and large dynamic range is required. This paper outlines a novel platform that integrates the nano, micro and macroscales in a closely coupled manner that mitigates many of these problems. We discuss our initial results of DNA translocation through the nanopore. We also briefly discuss the use of molecular recognition properties of aptamers with the versatility of the nanopore detector to design a new class of biosensors in a CMOS compatible platform.

  12. Polycrystalline Mercuric Iodide Films on CMOS Readout Arrays

    PubMed Central

    Hartsough, Neal E.; Iwanczyk, Jan S.; Nygard, Einar; Malakhov, Nail; Barber, William C.; Gandhi, Thulasidharan

    2009-01-01

    We have created high-resolution x-ray imaging devices using polycrystalline mercuric iodide (HgI2) films grown directly onto CMOS readout chips using a thermal vapor transport process. Images from prototype 400×400 pixel HgI2-coated CMOS readout chips are presented, where the pixel grid is 30 μm × 30 μm. The devices exhibited sensitivity of 6.2 μC/Rcm2 with corresponding dark current of ∼2.7 nA/cm2, and a 80 μm FWHM planar image response to a 50 μm slit aperture. X-ray CT images demonstrate a point spread function sufficient to obtain a 50 μm spatial resolution in reconstructed CT images at a substantially reduced dose compared to phosphor-coated readouts. The use of CMOS technology allows for small pixels (30 μm), fast readout speeds (8 fps for a 3200×3200 pixel array), and future design flexibility due to the use of well-developed fabrication processes. PMID:20161098

  13. CMOS-liquid-crystal-based image transceiver device

    NASA Astrophysics Data System (ADS)

    Efron, Uzi; Davidov, Isak; Sinelnikov, Vladimir; Levin, Ilya

    2001-05-01

    A CMOS-Liquid Crystal-Based Image Transceiver Device (ITD) is under development at the Holon Institute of Technology. The device combines both functions of imaginary and display in a single array structure. This unique structure allows the combination of see-through, aiming, imaging and the displaying of a superposed image to be combined in a single, compact, head mounted display. The CMOS-based pixel elements are designed to provide image sensor part of the pixel is based on an n-well photodiode and a three-transistors readout circuit. The imaging function is based on a back- illuminated sensor configuration. In order to provide a high imager fill-factor, two pixel configuration are proposed: 1) A p++/p-/p-well silicon structure using twin- well CMOS process; 2) an n-well processed silicon structure with a micro-lens array. The display portion of the IT device is to be fabricate don a silicon-based reflective, active matrix driver, using nematic liquid crystal material. The reflective display pixel electrode is driven by an n-MOS transistor, formed in the corresponding pixel region on the silicon substrate. The timing, sequencing and control of the IT device array are designed in a pipeline array processing scheme. A preliminary prototype system and device design have been performed and the first test device is currently being tested. Details of the device design as well as its smart goggle applications are presented.

  14. CMOS/LCOS-based image transceiver device: II

    NASA Astrophysics Data System (ADS)

    Efron, Uzi; Davidov, Isak; Sinelnikov, Vladimir; Friesem, Asher A.

    2001-11-01

    A CMOS-liquid crystal-based image transceiver device (ITD) is under development at the Holon Institute of Technology. The device combines both functions of imaging and display in a single array configuration. This unique structure allows the combination of see-through, aiming, imaging and the displaying of a superposed image to be combined in a single, compact, head mounted display. The CMOS-based pixel elements are designed to provide efficient imaging in the visible range as well as driver capabilities for the overlying liquid crystal modulator. The image sensor part of the pixel is based on an n-well photodiode and a three-transistor readout circuit. The imaging function is based on a back- illuminated sensor configuration. In order to provide a high imager fill-factor, two pixel configurations are proposed: 1) A p++/p-/p-well silicon structure using twin- well CMOS process; 2) An n-well processed silicon structure with a micro-lens array. The display portion of the IT device is to be fabricated on a silicon-based reflective, active matrix driver, using nematic liquid crystal material, in LCOS technology. The timing, sequencing and control of the IT device array are designed in a pipeline array processing scheme. A preliminary prototype system and device design have been performed and the first test device is currently undergoing testing. Details of the device design as well as its Smart Goggle applications are presented.

  15. Single-electron current sources: Toward a refined definition of the ampere

    NASA Astrophysics Data System (ADS)

    Pekola, Jukka P.; Saira, Olli-Pentti; Maisi, Ville F.; Kemppinen, Antti; Möttönen, Mikko; Pashkin, Yuri A.; Averin, Dmitri V.

    2013-10-01

    The control of electrons at the level of the elementary charge e was demonstrated experimentally already in the 1980s. Ever since, the production of an electrical current ef, or its integer multiple, at a drive frequency f has been a focus of research for metrological purposes. This review discusses the generic physical phenomena and technical constraints that influence single-electron charge transport and presents a broad variety of proposed realizations. Some of them have already proven experimentally to nearly fulfill the demanding needs, in terms of transfer errors and transfer rate, of quantum metrology of electrical quantities, whereas some others are currently “just” wild ideas, still often potentially competitive if technical constraints can be lifted. The important issues of readout of single-electron events and potential error correction schemes based on them are also discussed. Finally, an account is given of the status of single-electron current sources in the bigger framework of electric quantum standards and of the future international SI system of units, and applications and uses of single-electron devices outside the metrological context are briefly discussed.

  16. High yield neutron generator based on a high-current gasdynamic electron cyclotron resonance ion source

    NASA Astrophysics Data System (ADS)

    Skalyga, V.; Izotov, I.; Golubev, S.; Sidorov, A.; Razin, S.; Strelkov, A.; Tarvainen, O.; Koivisto, H.; Kalvas, T.

    2015-09-01

    In present paper, an approach for high yield compact D-D neutron generator based on a high current gasdynamic electron cyclotron resonance ion source is suggested. Results on dense pulsed deuteron beam production with current up to 500 mA and current density up to 750 mA/cm2 are demonstrated. Neutron yield from D2O and TiD2 targets was measured in case of its bombardment by pulsed 300 mA D+ beam with 45 keV energy. Neutron yield density at target surface of 109 s-1 cm-2 was detected with a system of two 3He proportional counters. Estimations based on obtained experimental results show that neutron yield from a high quality TiD2 target bombarded by D+ beam demonstrated in present work accelerated to 100 keV could reach 6 × 1010 s-1 cm-2. It is discussed that compact neutron generator with such characteristics could be perspective for a number of applications like boron neutron capture therapy, security systems based on neutron scanning, and neutronography.

  17. Field Emission Properties of Carbon Nanotube Fibers and Sheets for a High Current Electron Source

    NASA Astrophysics Data System (ADS)

    Christy, Larry

    Field emission (FE) properties of carbon nanotube (CNT) fibers from Rice University and the University of Cambridge have been studied for use within a high current electron source for a directed energy weapon. Upon reviewing the performance of these two prevalent CNT fibers, cathodes were designed with CNT fibers from the University of Cincinnati Nanoworld Laboratory. Cathodes composed of a single CNT fiber, an array of three CNT fibers, and a nonwoven CNT sheet were investigated for FE properties; the goal was to design a cathode with emission current in excess of 10 mA. Once the design phase was complete, the cathode samples were fabricated, characterized, and then analyzed to determine FE properties. Electrical conductivity of the CNT fibers was characterized with a 4-probe technique. FE characteristics were measured in an ultra-high vacuum chamber at Wright-Patterson Air Force Base. The arrayed CNT fiber and the enhanced nonwoven CNT sheet emitter design demonstrated the most promising FE properties. Future work will include further analysis and cathode design using this nonwoven CNT sheet material to increase peak current performance during electron emission.

  18. High yield neutron generator based on a high-current gasdynamic electron cyclotron resonance ion source

    SciTech Connect

    Skalyga, V.; Sidorov, A.; Izotov, I.; Golubev, S.; Razin, S.; Strelkov, A.; Tarvainen, O.; Koivisto, H.; Kalvas, T.

    2015-09-07

    In present paper, an approach for high yield compact D-D neutron generator based on a high current gasdynamic electron cyclotron resonance ion source is suggested. Results on dense pulsed deuteron beam production with current up to 500 mA and current density up to 750 mA/cm{sup 2} are demonstrated. Neutron yield from D{sub 2}O and TiD{sub 2} targets was measured in case of its bombardment by pulsed 300 mA D{sup +} beam with 45 keV energy. Neutron yield density at target surface of 10{sup 9} s{sup −1} cm{sup −2} was detected with a system of two {sup 3}He proportional counters. Estimations based on obtained experimental results show that neutron yield from a high quality TiD{sub 2} target bombarded by D{sup +} beam demonstrated in present work accelerated to 100 keV could reach 6 × 10{sup 10} s{sup −1} cm{sup −2}. It is discussed that compact neutron generator with such characteristics could be perspective for a number of applications like boron neutron capture therapy, security systems based on neutron scanning, and neutronography.

  19. Novel current collapse mode induced by source leakage current in AlGaN/GaN high-electron-mobility transistors and its impact

    NASA Astrophysics Data System (ADS)

    Tsubomi, Kunihiro; Muraguchi, Masakazu; Endoh, Tetsuo

    2016-08-01

    The suppression of the current collapse phenomenon is required for reducing on-resistance in AlGaN/GaN high-electron-mobility transistors. Current collapse is caused by electron trapping at the surface and in the buffer layer. In previous works, electron injection to traps has been mainly regarded as being due to gate leakage current; however, other factors have not been discussed. In this study, a novel current collapse mode induced by source leakage current is examined with a 2D device simulator. In addition to gate leakage current, electron trapping is induced by source leakage current that flows under the gate electrode during the off-state. The electron trapping increases on-resistance and decreases pinch-off voltage. The increase in on-resistance is clarified under several trap and voltage conditions. In the simulated range, it is revealed that the on-resistance increases over 1.31 times by the source current collapse mode only, when the stress drain voltage of 500 V is applied during the off-state.

  20. Laminar Distribution of Phase-Amplitude Coupling of Spontaneous Current Sources and Sinks

    PubMed Central

    Sotero, Roberto C.; Bortel, Aleksandra; Naaman, Shmuel; Mocanu, Victor M.; Kropf, Pascal; Villeneuve, Martin Y.; Shmuel, Amir

    2015-01-01

    Although resting-state functional connectivity is a commonly used neuroimaging paradigm, the underlying mechanisms remain unknown. Thalamo-cortical and cortico-cortical circuits generate oscillations at different frequencies during spontaneous activity. However, it remains unclear how the various rhythms interact and whether their interactions are lamina-specific. Here we investigated intra- and inter-laminar spontaneous phase-amplitude coupling (PAC). We recorded local-field potentials using laminar probes inserted in the forelimb representation of rat area S1. We then computed time-series of frequency-band- and lamina-specific current source density (CSD), and PACs of CSD for all possible pairs of the classical frequency bands in the range of 1–150 Hz. We observed both intra- and inter-laminar spontaneous PAC. Of 18 possible combinations, 12 showed PAC, with the highest measures of interaction obtained for the pairs of the theta/gamma and delta/gamma bands. Intra- and inter-laminar PACs involving layers 2/3–5a were higher than those involving layer 6. Current sinks (sources) in the delta band were associated with increased (decreased) amplitudes of high-frequency signals in the beta to fast gamma bands throughout layers 2/3–6. Spontaneous sinks (sources) of the theta and alpha bands in layers 2/3–4 were on average linked to dipoles completed by sources (sinks) in layer 6, associated with high (low) amplitudes of the beta to fast-gamma bands in the entire cortical column. Our findings show that during spontaneous activity, delta, theta, and alpha oscillations are associated with periodic excitability, which for the theta and alpha bands is lamina-dependent. They further emphasize the differences between the function of layer 6 and that of the superficial layers, and the role of layer 6 in controlling activity in those layers. Our study links theories on the involvement of PAC in resting-state functional connectivity with previous work that revealed lamina

  1. Sources and fate of freshwater exported in the East Greenland Current

    NASA Astrophysics Data System (ADS)

    Dodd, Paul A.; Heywood, Karen J.; Meredith, Michael P.; Naveira-Garabato, Alberto C.; Marca, Alina D.; Falkner, Kelly K.

    2009-10-01

    Monitoring the sources and fate of freshwater in the East Greenland Current (EGC) is important, as this water has the potential to suppress deep convection in the Nordic and Labrador Seas if the outflow of freshwater from the Arctic Ocean increases in response to climate change. Here, hydrographic, oxygen isotope ratio and dissolved barium concentration sections across Denmark Strait collected in 1998 and 1999 are used to determine the freshwater composition of the EGC at these times. Comparison of meltwater fluxes at Denmark Strait and Fram Strait indicates a net melting of sea ice into the EGC between these two locations, with a significant proportion of sea ice drifting into the Nordic Seas or on to the East Greenland Shelf. We conclude that the phase of freshwater exiting the Arctic Ocean through Fram Strait is important in determining its possible impact on deep water formation in the Nordic and Labrador Seas.

  2. A high-current microwave ion source with permanent magnet and its beam emittance measurement

    SciTech Connect

    Yao Zeen; Tan Xinjian; Du Hongxin; Luo Ben; Liu Zhanwen

    2008-07-15

    The progress of a 2.45 GHz high-current microwave ion source with permanent magnet for T(d,n){sup 4}He reaction neutron generator is reported in this paper. At 600 W microwave power and 22 kV extraction voltage, 90 mA peak hydrogen ion beam is extracted from a single aperture of 6 mm diameter. The beam emittance is measured using a simplified pepper-pot method. The (x,x{sup '}) emittance and the (y,y{sup '}) emittance for 14 keV hydrogen ion beam are 55.3{pi} and 58.2{pi} mm mrad, respectively. The normalized emittances are 0.302{pi} and 0.317{pi} mm mrad, respectively.

  3. Atmospheric pressure chemical ionization of explosives using alternating current corona discharge ion source.

    PubMed

    Usmanov, D T; Chen, L C; Yu, Z; Yamabe, S; Sakaki, S; Hiraoka, K

    2015-04-01

    The high-sensitive detection of explosives is of great importance for social security and safety. In this work, the ion source for atmospheric pressure chemical ionization/mass spectrometry using alternating current corona discharge was newly designed for the analysis of explosives. An electromolded fine capillary with 115 µm inner diameter and 12 mm long was used for the inlet of the mass spectrometer. The flow rate of air through this capillary was 41 ml/min. Stable corona discharge could be maintained with the position of the discharge needle tip as close as 1 mm to the inlet capillary without causing the arc discharge. Explosives dissolved in 0.5 µl methanol were injected to the ion source. The limits of detection for five explosives with 50 pg or lower were achieved. In the ion/molecule reactions of trinitrotoluene (TNT), the discharge products of NOx (-) (x = 2,3), O3 and HNO3 originating from plasma-excited air were suggested to contribute to the formation of [TNT - H](-) (m/z 226), [TNT - NO](-) (m/z 197) and [TNT - NO + HNO3 ](-) (m/z 260), respectively. Formation processes of these ions were traced by density functional theory calculations. Copyright © 2015 John Wiley & Sons, Ltd. PMID:26149109

  4. The current status of the development of renewable energy sources worldwide and in Russia

    NASA Astrophysics Data System (ADS)

    Fortov, V. E.; Popel', O. S.

    2014-06-01

    Resorting to renewable energy sources (RESs) as one of the bases of the promising world energy industry has become a logical result of the historical development and the recognition that is necessary to diversify primary energy sources being used, with the aim of enhancing both energy and ecological security of countries, regions, and concrete energy consumers. The review of the development of new technologies used for conversion of RESs, the progress of which can be characterized by the fact that by the year 2013 the total generating capacity of RES-based power plants now in operation has amounted to 500 GW—by a factor of 1.5 more than the total generating capacity of all nuclear power stations in the world. The paper presents an analysis of the current status of RESs and problems that restrain their development in Russia. It is noted that the peculiarities of the energy situation in Russia impose the specific requirements upon drawing up the programs of the development of RESs. Along with the use of RESs as part of systems of centralized energy supply, which is a priority for most industrially developed countries and promises the most large-scale introduction of RESs in Russia, it is necessary, first of all, to give attention to the development and creation of systems for independent supply of consumers with power and heat and the development of distributed powergenerating systems using RESs.

  5. The adequacy of current import and export controls on sealed radioactive sources.

    SciTech Connect

    Longley, Susan W.; Cochran, John Russell; Price, Laura L.; Lipinski, Kendra J.

    2003-10-01

    Millions of sealed radioactive sources (SRSs) are being used for a wide variety of beneficial purposes throughout the world. Security experts are now concerned that these beneficial SRSs could be used in a radiological dispersion device to terrorize and disrupt society. The greatest safety and security threat is from those highly radioactive Category 1 and 2 SRSs. Without adequate controls, it may be relatively easy to legally purchase a Category 1 or 2 SRS on the international market under false pretenses. Additionally, during transfer, SRSs are particularly susceptible to theft since the sources are in a shielded and mobile configuration, transportation routes are predictable, and shipments may not be adequately guarded. To determine if government controls on SRS are adequate, this study was commissioned to review the current SRS import and export controls of six countries. Canada, the Russian Federation, and South Africa were selected as the exporting countries, and Egypt, the Philippines, and the United States were selected as importing countries. A detailed review of the controls in each country is presented. The authors found that Canada and Russia are major exporters, and are exporting highly radioactive SRSs without first determining if the recipient is authorized by the receiving country to own and use the SRSs. Available evidence was used to estimate that on average there are tens to possibly hundreds of intercountry transfers of highly radioactive SRSs each day. Based on these and other findings, this reports recommends stronger controls on the export and import of highly radioactive SRSs.

  6. Modeling left and right atrial contributions to the ECG: A dipole-current source approach.

    PubMed

    Jacquemet, Vincent

    2015-10-01

    This paper presents the mathematical formulation, the numerical validation and several illustrations of a forward-modeling approach based on dipole-current sources to compute the contribution of a part of the heart to the electrocardiogram (ECG). Clinically relevant applications include identifying in the ECG the contributions from the right and the left atrium. In a Courtemanche-based monodomain computer model of the atria and torso, 1000 dipoles distributed throughout the atrial mid-myocardium are found to be sufficient to reproduce body surface potential maps with a relative error <1% during both sinus rhythm and atrial fibrillation. When the boundary element method is applied to solve the forward problem, this approach enables fast offline computation of the ECG contribution of any anatomical part of the atria by applying the principle of superposition to the dipole sources. In the presence of a right-left activation delay (sinus rhythm), pulmonary vein isolation (sinus rhythm) or left-right differences in refractory period (atrial fibrillation), the decomposition of the ECG is shown to help interpret ECG morphology in relation to the atrial substrate. These tools provide a theoretical basis for a deeper understanding of the genesis of the P wave or fibrillatory waves in normal and pathological cases. PMID:26149374

  7. Multiband CMOS sensor simplify FPA design

    NASA Astrophysics Data System (ADS)

    Wang, Weng Lyang B.; Ling, Jer

    2015-10-01

    Push broom multi-band Focal Plane Array (FPA) design needs to consider optics, image sensor, electronic, mechanic as well as thermal. Conventional FPA use two or several CCD device as an image sensor. The CCD image sensor requires several high speed, high voltage and high current clock drivers as well as analog video processors to support their operation. Signal needs to digitize using external sample / hold and digitized circuit. These support circuits are bulky, consume a lot of power, must be shielded and placed in close to the CCD to minimize the introduction of unwanted noise. The CCD also needs to consider how to dissipate power. The end result is a very complicated FPA and hard to make due to more weighs and draws more power requiring complex heat transfer mechanisms. In this paper, we integrate microelectronic technology and multi-layer soft / hard Printed Circuit Board (PCB) technology to design electronic portion. Since its simplicity and integration, the optics, mechanic, structure and thermal design will become very simple. The whole FPA assembly and dis-assembly reduced to a few days. A multi-band CMOS Sensor (dedicated as C468) was used for this design. The CMOS Sensor, allow for the incorporation of clock drivers, timing generators, signal processing and digitization onto the same Integrated Circuit (IC) as the image sensor arrays. This keeps noise to a minimum while providing high functionality at reasonable power levels. The C468 is a first Multiple System-On-Chip (MSOC) IC. This device used our proprietary wafer butting technology and MSOC technology to combine five long sensor arrays into a size of 120 mm x 23.2 mm and 155 mm x 60 mm for chip and package, respectively. The device composed of one Panchromatic (PAN) and four different Multi- Spectral (MS) sensors. Due to its integration on the electronic design, a lot of room is clear for the thermal design. The optical and mechanical design is become very straight forward. The flight model FPA

  8. Swap intensified WDR CMOS module for I2/LWIR fusion

    NASA Astrophysics Data System (ADS)

    Ni, Yang; Noguier, Vincent

    2015-05-01

    The combination of high resolution visible-near-infrared low light sensor and moderate resolution uncooled thermal sensor provides an efficient way for multi-task night vision. Tremendous progress has been made on uncooled thermal sensors (a-Si, VOx, etc.). It's possible to make a miniature uncooled thermal camera module in a tiny 1cm3 cube with <1W power consumption. For silicon based solid-state low light CCD/CMOS sensors have observed also a constant progress in terms of readout noise, dark current, resolution and frame rate. In contrast to thermal sensing which is intrinsic day&night operational, the silicon based solid-state sensors are not yet capable to do the night vision performance required by defense and critical surveillance applications. Readout noise, dark current are 2 major obstacles. The low dynamic range at high sensitivity mode of silicon sensors is also an important limiting factor, which leads to recognition failure due to local or global saturations & blooming. In this context, the image intensifier based solution is still attractive for the following reasons: 1) high gain and ultra-low dark current; 2) wide dynamic range and 3) ultra-low power consumption. With high electron gain and ultra low dark current of image intensifier, the only requirement on the silicon image pickup device are resolution, dynamic range and power consumption. In this paper, we present a SWAP intensified Wide Dynamic Range CMOS module for night vision applications, especially for I2/LWIR fusion. This module is based on a dedicated CMOS image sensor using solar-cell mode photodiode logarithmic pixel design which covers a huge dynamic range (> 140dB) without saturation and blooming. The ultra-wide dynamic range image from this new generation logarithmic sensor can be used directly without any image processing and provide an instant light accommodation. The complete module is slightly bigger than a simple ANVIS format I2 tube with <500mW power consumption.

  9. Recent Design Development in Molecular Imaging for Breast Cancer Detection Using Nanometer CMOS Based Sensors

    PubMed Central

    Nguyen, Dung C.; Ma, Dongsheng (Brian); Roveda, Janet M. W.

    2012-01-01

    As one of the key clinical imaging methods, the computed X-ray tomography can be further improved using new nanometer CMOS sensors. This will enhance the current technique's ability in terms of cancer detection size, position, and detection accuracy on the anatomical structures. The current paper reviewed designs of SOI-based CMOS sensors and their architectural design in mammography systems. Based on the existing experimental results, using the SOI technology can provide a low-noise (SNR around 87.8 db) and high-gain (30 v/v) CMOS imager. It is also expected that, together with the fast data acquisition designs, the new type of imagers may play important roles in the near-future high-dimensional images in additional to today's 2D imagers. PMID:23319947

  10. Testability of VLSI (Very Large Scale Integration) leakage faults in CMOS (Complementary Metal Oxide Semiconductor)

    NASA Astrophysics Data System (ADS)

    Malaiya, Y. K.; Su, S. Y. H.

    1983-09-01

    With the advent of VLSI (Very Large Scale Integration), the importance of CMOS (Complementary Metal Oxide Semiconductor) technology has increased. CMOS offers some very significant advantages over NMOS, and has emerged very competitive. Therefore, testability of CMOS devices is of considerable importance. CMOS devices exhibit some failure modes which are not adequately represented by the classical stuck-at fault model. A new fault model is introduced here to represent such faults. Leakage faults are specifically examined in this report, such faults increase the static supply current (which is ordinarily quite low) substantially. A leakage testing experiment consists of applying different vectors to the circuit, and in each case measuring the static supply current. This experimentally obtained data is then analyzed to obtain fault-related information. Leakage testing offers extra testability without any additional pins. It can detect some faults which cannot be detected by the conventional testing. Test generation for several basic CMOS structures is considered. Correspondence between leakage testing and conventional testing is studied. Two methods for analyzing experimental data are presented. Available experimental data was analyzed to obtain statistical information.

  11. Worst-case test vectors for functional failure induced by total dose in CMOS microcircuits with transmission gates

    SciTech Connect

    Abou-Auf, A.A.; Barbe, D.F.; Rushdi, M.M.

    1997-12-01

    The authors have recently developed fault models for functional and leakage-current failures induced in circuits containing static CMOS gates (e.g., INV, NOR and NAND). They used these fault models to automatically generate worst-case test vectors (WCTV) for circuits composed of the above gates as basic building blocks. However, CMOS circuits can be composed from other building blocks in addition to static CMOS gates. One of these is the transmission gate (TG). Static CMOS gates and TGs together make up the majority of CMOS circuits. Unfortunately, functional failures induced in circuits containing TGs have received little attention in the past. Moreover, the authors are not aware of previous effort to identify WCTV for CMOS circuits containing TGs. The focus in this paper is to develop fault models for CMOS circuits containing TGs, then use these models to identify the combinations of irradiation and postirradiation test vectors that can result in a worst-case failure level of the circuit under test. In their analysis, they will use the circuits in the CMOSN Cell Library. This analysis is supported by SPICE simulation that utilizes experimentally extracted transistor parameters. They have also used their analysis to interpret data from a previous total-dose testing a test chip designed using the CMOSN Cell Library and fabricated using 1 {mu} technology.

  12. Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement

    DOEpatents

    Turner, Steven Richard

    2006-12-26

    A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.

  13. Ultrasound Current Source Density Imaging of the Cardiac Activation Wave Using a Clinical Cardiac Catheter

    PubMed Central

    Qin, Yexian; Li, Qian; Ingram, Pier; Barber, Christy; Liu, Zhonglin

    2015-01-01

    Ultrasound current source density imaging (UCSDI), based on the acoustoelectric (AE) effect, is a noninvasive method for mapping electrical current in 4-D (space + time). This technique potentially overcomes limitations with conventional electrical mapping procedures typically used during treatment of sustained arrhythmias. However, the weak AE signal associated with the electrocardiogram is a major challenge for advancing this technology. In this study, we examined the effects of the electrode configuration and ultrasound frequency on the magnitude of the AE signal and quality of UCSDI using a rabbit Langendorff heart preparation. The AE signal was much stronger at 0.5 MHz (2.99 μV/MPa) than 1.0 MHz (0.42 μV/MPa). Also, a clinical lasso catheter placed on the epicardium exhibited excellent sensitivity without penetrating the tissue. We also present, for the first time, 3-D cardiac activation maps of the live rabbit heart using only one pair of recording electrodes. Activation maps were used to calculate the cardiac conduction velocity for atrial (1.31 m/s) and apical (0.67 m/s) pacing. This study demonstrated that UCSDI is potentially capable of real-time 3-D cardiac activation wave mapping, which would greatly facilitate ablation procedures for treatment of arrhythmias. PMID:25122512

  14. First test of BNL electron beam ion source with high current density electron beam

    SciTech Connect

    Pikin, Alexander Alessi, James G. Beebe, Edward N.; Shornikov, Andrey; Mertzig, Robert; Wenander, Fredrik; Scrivens, Richard

    2015-01-09

    A new electron gun with electrostatic compression has been installed at the Electron Beam Ion Source (EBIS) Test Stand at BNL. This is a collaborative effort by BNL and CERN teams with a common goal to study an EBIS with electron beam current up to 10 A, current density up to 10,000 A/cm{sup 2} and energy more than 50 keV. Intensive and pure beams of heavy highly charged ions with mass-to-charge ratio < 4.5 are requested by many heavy ion research facilities including NASA Space Radiation Laboratory (NSRL) at BNL and HIE-ISOLDE at CERN. With a multiampere electron gun, the EBIS should be capable of delivering highly charged ions for both RHIC facility applications at BNL and for ISOLDE experiments at CERN. Details of the electron gun simulations and design, and the Test EBIS electrostatic and magnetostatic structures with the new electron gun are presented. The experimental results of the electron beam transmission are given.

  15. High current multicharged metal ion source using high power gyrotron heating of vacuum arc plasma.

    PubMed

    Vodopyanov, A V; Golubev, S V; Khizhnyak, V I; Mansfeld, D A; Nikolaev, A G; Oks, E M; Savkin, K P; Vizir, A V; Yushkov, G Yu

    2008-02-01

    A high current, multi charged, metal ion source using electron heating of vacuum arc plasma by high power gyrotron radiation has been developed. The plasma is confined in a simple mirror trap with peak magnetic field in the plug up to 2.5 T, mirror ratio of 3-5, and length variable from 15 to 20 cm. Plasma formed by a cathodic vacuum arc is injected into the trap either (i) axially using a compact vacuum arc plasma gun located on axis outside the mirror trap region or (ii) radially using four plasma guns surrounding the trap at midplane. Microwave heating of the mirror-confined, vacuum arc plasma is accomplished by gyrotron microwave radiation of frequency 75 GHz, power up to 200 kW, and pulse duration up to 150 micros, leading to additional stripping of metal ions by electron impact. Pulsed beams of platinum ions with charge state up to 10+, a mean charge state over 6+, and total (all charge states) beam current of a few hundred milliamperes have been formed. PMID:18315170

  16. High current multicharged metal ion source using high power gyrotron heating of vacuum arc plasma

    SciTech Connect

    Vodopyanov, A. V.; Golubev, S. V.; Khizhnyak, V. I.; Mansfeld, D. A.; Nikolaev, A. G.; Oks, E. M.; Savkin, K. P.; Vizir, A. V.; Yushkov, G. Yu.

    2008-02-15

    A high current, multi charged, metal ion source using electron heating of vacuum arc plasma by high power gyrotron radiation has been developed. The plasma is confined in a simple mirror trap with peak magnetic field in the plug up to 2.5 T, mirror ratio of 3-5, and length variable from 15 to 20 cm. Plasma formed by a cathodic vacuum arc is injected into the trap either (i) axially using a compact vacuum arc plasma gun located on axis outside the mirror trap region or (ii) radially using four plasma guns surrounding the trap at midplane. Microwave heating of the mirror-confined, vacuum arc plasma is accomplished by gyrotron microwave radiation of frequency 75 GHz, power up to 200 kW, and pulse duration up to 150 {mu}s, leading to additional stripping of metal ions by electron impact. Pulsed beams of platinum ions with charge state up to 10+, a mean charge state over 6+, and total (all charge states) beam current of a few hundred milliamperes have been formed.

  17. An interpretation of induced electric currents in long pipelines caused by natural geomagnetic sources of the upper atmosphere

    USGS Publications Warehouse

    Campbell, W.H.

    1986-01-01

    Electric currents in long pipelines can contribute to corrosion effects that limit the pipe's lifetime. One cause of such electric currents is the geomagnetic field variations that have sources in the Earth's upper atmosphere. Knowledge of the general behavior of the sources allows a prediction of the occurrence times, favorable locations for the pipeline effects, and long-term projections of corrosion contributions. The source spectral characteristics, the Earth's conductivity profile, and a corrosion-frequency dependence limit the period range of the natural field changes that affect the pipe. The corrosion contribution by induced currents from geomagnetic sources should be evaluated for pipelines that are located at high and at equatorial latitudes. At midlatitude locations, the times of these natural current maxima should be avoided for the necessary accurate monitoring of the pipe-to-soil potential. ?? 1986 D. Reidel Publishing Company.

  18. Variability of Surface pollutants and aerosol concentration over Abu Dhabi, UAE - sources, transport and current levels

    NASA Astrophysics Data System (ADS)

    Phanikumar, Devulapalli V.; Basha, Ghouse; Ouarda, Taha B. M. J.

    2015-04-01

    pollutants are in contrast with the diurnal pattern of wind speed as evident from the previous observations. Wind rose diagram of pollutants reveal that the dominant source directions are scattered from northwesterly to southwesterly. Our results (2011-13) are compared with earlier observations from the same region (2007-08) and no alarming differences were observed in the pollutant levels. Our observations are discussed in the light of current understanding of pollutants sources over this region.

  19. Flexible packaging and integration of CMOS IC with elastomeric microfluidics

    NASA Astrophysics Data System (ADS)

    Zhang, Bowei; Dong, Quan; Korman, Can E.; Li, Zhenyu; Zaghloul, Mona E.

    2013-05-01

    We have demonstrated flexible packaging and integration of CMOS IC chips with PDMS microfluidics. Microfluidic channels are used to deliver both liquid samples and liquid metals to the CMOS die. The liquid metals are used to realize electrical interconnects to the CMOS chip. As a demonstration we integrated a CMOS magnetic sensor die and matched PDMS microfluidic channels in a flexible package. The packaged system is fully functional under 3cm bending radius. The flexible integration of CMOS ICs with microfluidics enables previously unavailable flexible CMOS electronic systems with fluidic manipulation capabilities, which hold great potential for wearable health monitoring, point-of-care diagnostics and environmental sensing.

  20. A CMOS Smart Temperature and Humidity Sensor with Combined Readout

    PubMed Central

    Eder, Clemens; Valente, Virgilio; Donaldson, Nick; Demosthenous, Andreas

    2014-01-01

    A fully-integrated complementary metal-oxide semiconductor (CMOS) sensor for combined temperature and humidity measurements is presented. The main purpose of the device is to monitor the hermeticity of micro-packages for implanted integrated circuits and to ensure their safe operation by monitoring the operating temperature and humidity on-chip. The smart sensor has two modes of operation, in which either the temperature or humidity is converted into a digital code representing a frequency ratio between two oscillators. This ratio is determined by the ratios of the timing capacitances and bias currents in both oscillators. The reference oscillator is biased by a current whose temperature dependency is complementary to the proportional to absolute temperature (PTAT) current. For the temperature measurement, this results in an exceptional normalized sensitivity of about 0.77%/°C at the accepted expense of reduced linearity. The humidity sensor is a capacitor, whose value varies linearly with relative humidity (RH) with a normalized sensitivity of 0.055%/% RH. For comparison, two versions of the humidity sensor with an area of either 0.2 mm2 or 1.2 mm2 were fabricated in a commercial 0.18 μm CMOS process. The on-chip readout electronics operate from a 5 V power supply and consume a current of approximately 85 μA. PMID:25230305

  1. A CMOS smart temperature and humidity sensor with combined readout.

    PubMed

    Eder, Clemens; Valente, Virgilio; Donaldson, Nick; Demosthenous, Andreas

    2014-01-01

    A fully-integrated complementary metal-oxide semiconductor (CMOS) sensor for combined temperature and humidity measurements is presented. The main purpose of the device is to monitor the hermeticity of micro-packages for implanted integrated circuits and to ensure their safe operation by monitoring the operating temperature and humidity on-chip. The smart sensor has two modes of operation, in which either the temperature or humidity is converted into a digital code representing a frequency ratio between two oscillators. This ratio is determined by the ratios of the timing capacitances and bias currents in both oscillators. The reference oscillator is biased by a current whose temperature dependency is complementary to the proportional to absolute temperature (PTAT) current. For the temperature measurement, this results in an exceptional normalized sensitivity of about 0.77%/°C at the accepted expense of reduced linearity. The humidity sensor is a capacitor, whose value varies linearly with relative humidity (RH) with a normalized sensitivity of 0.055%/% RH. For comparison, two versions of the humidity sensor with an area of either 0.2 mm2 or 1.2 mm2 were fabricated in a commercial 0.18 μm CMOS process. The on-chip readout electronics operate from a 5 V power supply and consume a current of approximately 85 µA. PMID:25230305

  2. 180 Degree Hybrid (Rat-Race) Junction on CMOS Grade Silicon with a Polyimide Interface Layer

    NASA Technical Reports Server (NTRS)

    Ponchak, George E.; Papapolymerou, John

    2003-01-01

    180-degree hybrid junctions can be used to equally divide power between two output ports with either a 0 or 180-degree phase difference. Alternatively, they can be used to combine signals from two sources and output a sum and difference signal. The main limitation of implementing; these on CMOS grade silicon is the high loss associated with the substrate. In this paper, we present a low loss 180-degree hybrid junction on CMOS grade (15 omega-cm) silicon with a polyimide interface layer for the first time. The divider utilizes Finite Ground Coplanar (FGC) line technology, and operates at a center frequency of 15 GIIz.

  3. Development of low read noise high conversion gain CMOS image sensor for photon counting level imaging

    NASA Astrophysics Data System (ADS)

    Seo, Min-Woong; Kawahito, Shoji; Kagawa, Keiichiro; Yasutomi, Keita

    2016-05-01

    A CMOS image sensor with deep sub-electron read noise and high pixel conversion gain has been developed. Its performance is recognized through image outputs from an area image sensor, confirming the capability of photoelectroncounting- level imaging. To achieve high conversion gain, the proposed pixel has special structures to reduce the parasitic capacitances around FD node. As a result, the pixel conversion gain is increased due to the optimized FD node capacitance, and the noise performance is also improved by removing two noise sources from power supply. For the first time, high contrast images from the reset-gate-less CMOS image sensor, with less than 0.3e- rms noise level, have been generated at an extremely low light level of a few electrons per pixel. In addition, the photon-counting capability of the developed CMOS imager is demonstrated by a measurement, photoelectron-counting histogram (PCH).

  4. Novel MSVPWM to Reduce the Inductor Current Ripple for Z-Source Inverter in Electric Vehicle Applications

    PubMed Central

    Zhang, Qianfan; Dong, Shuai; Xue, Ping; Zhou, Chaowei; Cheng, ShuKang

    2014-01-01

    A novel modified space vector pulse width modulation (MSVPWM) strategy for Z-Source inverter is presented. By rearranging the position of shoot-through states, the frequency of inductor current ripple is kept constant. Compared with existing MSVPWM strategies, the proposed approach can reduce the maximum inductor current ripple. So the volume of Z-source network inductor can be designed smaller, which brings the beneficial effect on the miniaturization of the electric vehicle controller. Theoretical findings in the novel MSVPWM for Z-Source inverter have been verified by experiment results. PMID:24883412

  5. Novel MSVPWM to reduce the inductor current ripple for Z-source inverter in electric vehicle applications.

    PubMed

    Zhang, Qianfan; Dong, Shuai; Xue, Ping; Zhou, Chaowei; Cheng, ShuKang

    2014-01-01

    A novel modified space vector pulse width modulation (MSVPWM) strategy for Z-Source inverter is presented. By rearranging the position of shoot-through states, the frequency of inductor current ripple is kept constant. Compared with existing MSVPWM strategies, the proposed approach can reduce the maximum inductor current ripple. So the volume of Z-source network inductor can be designed smaller, which brings the beneficial effect on the miniaturization of the electric vehicle controller. Theoretical findings in the novel MSVPWM for Z-Source inverter have been verified by experiment results. PMID:24883412

  6. Recent progress and development of a speedster-EXD: a new event-triggered hybrid CMOS x-ray detector

    NASA Astrophysics Data System (ADS)

    Griffith, Christopher V.; Falcone, Abraham D.; Prieskorn, Zachary R.; Burrows, David N.

    2015-08-01

    We present the characterization of a new event-driven X-ray hybrid CMOS detector developed by Penn State University in collaboration with Teledyne Imaging Sensors. Along with its low susceptibility to radiation damage, low power consumption, and fast readout time to avoid pile-up, the Speedster-EXD has been designed with the capability to limit its readout to only those pixels containing charge, thus enabling even faster effective frame rates. The threshold for the comparator in each pixel can be set by the user so that only pixels with signal above the set threshold are read out. The Speedster-EXD hybrid CMOS detector also has two new in-pixel features that reduce noise from known noise sources: (1) a low-noise, high-gain CTIA amplifier to eliminate crosstalk from interpixel capacitance (IPC) and (2) in-pixel CDS subtraction to reduce kTC noise. We present the read noise, dark current, IPC, energy resolution, and gain variation measurements of one Speedster-EXD detector.

  7. Performance of CMOS imager as sensing element for a Real-time Active Pixel Dosimeter for Interventional Radiology procedures

    NASA Astrophysics Data System (ADS)

    Magalotti, D.; Bissi, L.; Conti, E.; Paolucci, M.; Placidi, P.; Scorzoni, A.; Servoli, L.

    2014-01-01

    Staff members applying Interventional Radiology procedures are exposed to ionizing radiation, which can induce detrimental effects to the human body, and requires an improvement of radiation protection. This paper is focused on the study of the sensor element for a wireless real-time dosimeter to be worn by the medical staff during the interventional radiology procedures, in the framework of the Real-Time Active PIxel Dosimetry (RAPID) INFN project. We characterize a CMOS imager to be used as detection element for the photons scattered by the patient body. The CMOS imager has been first characterized in laboratory using fluorescence X-ray sources, then a PMMA phantom has been used to diffuse the X-ray photons from an angiography system. Different operating conditions have been used to test the detector response in realistic situations, by varying the X-ray tube parameters (continuous/pulsed mode, tube voltage and current, pulse parameters), the sensor parameters (gain, integration time) and the relative distance between sensor and phantom. The sensor response has been compared with measurements performed using passive dosimeters (TLD) and also with a certified beam, in an accredited calibration centre, in order to obtain an absolute calibration. The results are very encouraging, with dose and dose rate measurement uncertainties below the 10% level even for the most demanding Interventional Radiology protocols.

  8. DESIGN OF 2.4 GHZ CMOS DIRECT CONVERSION LNA AND MIXER COMBINATION FOR WIRLESS DATA LINK TRANSCEIVER.

    SciTech Connect

    ZHAO, D.; OCONNOR, P.

    2002-04-10

    Three LNA and mixer combinations in 0.6{micro}m and 0.4{micro}m standard CMOS processes for direct-conversion receiver of 2.4GHz ISM band short-range wireless data-link applications are described in this paper. Taking low power dissipation as first consideration, these designs, employing differential common-source LNA and double balanced mixer architectures, achieve total conversion gain as high as 42.4dB, DSB noise figure as low as 9.5dB, output-referred IP3 as high as of 21.3dBm at about 4mA DC current consumption. This proves it is possible to apply standard CMOS process to implement receiver front-end with low power dissipation for this kind of application, but gain changeable LNA is needed to combat the dominant flicker noise of the mixer in order to achieve acceptable sensitivity and dynamic range at the same time.

  9. Sources or sinks? The responses of tropical forests to current and future climate and atmospheric composition.

    PubMed Central

    Clark, Deborah A

    2004-01-01

    How tropical rainforests are responding to the ongoing global changes in atmospheric composition and climate is little studied and poorly understood. Although rising atmospheric carbon dioxide (CO2) could enhance forest productivity, increased temperatures and drought are likely to diminish it. The limited field data have produced conflicting views of the net impacts of these changes so far. One set of studies has seemed to point to enhanced carbon uptake; however, questions have arisen about these findings, and recent experiments with tropical forest trees indicate carbon saturation of canopy leaves and no biomass increase under enhanced CO2. Other field observations indicate decreased forest productivity and increased tree mortality in recent years of peak temperatures and drought (strong El Niño episodes). To determine current climatic responses of forests around the world tropics will require careful annual monitoring of ecosystem performance in representative forests. To develop the necessary process-level understanding of these responses will require intensified experimentation at the whole-tree and stand levels. Finally, a more complete understanding of tropical rainforest carbon cycling is needed for determining whether these ecosystems are carbon sinks or sources now, and how this status might change during the next century. PMID:15212097

  10. Wild boars meat as a potential source of human trichinellosis in Poland: current data.

    PubMed

    Moskwa, Bożena; Cybulska, Aleksandra; Kornacka, Aleksandra; Cabaj, Władysław; Bień, Justyna

    2015-09-01

    Trichinellosis is an epidemiological problem with a global distribution. In Poland a substantial increase of the wild boar population has been observed since 2010, together with an increased incidence of trichinellosis after ingestion of raw or undercooked wild boar products containing Trichinella spp. larvae. However, the actual number of human cases remains particularly difficult to determine. The aim of the present study was to determine the current prevalence and spread of these parasites within wild boars. The diaphragm pillars and tongue from 833 wild boars were collected from 2010 to 2014, as well as one wild boar meat sausage known to be a source of infection. The samples were tested for Trichinella spp. using pepsin digestion. Recovered larvae were identified at species level by multiplex polymerase chain reaction (multiplex PCR). The overall prevalence in all examined samples was found to be 2.0% (17/833). Recovered larvae were identified as T. spiralis and T. britovi (9/18 and 5/18, respectively). T. spiralis larvae were isolated from the sausage. Mixed infection was confirmed only once. Three isolates were not identified. The results of our study confirm that the wild boar plays a key role in the maintenance of Trichinella nematodes through the sylvatic cycle. PMID:26204193

  11. Quantifying sources and sinks of trace gases using space-borne measurements: current and future science.

    PubMed

    Palmer, Paul I

    2008-12-28

    We have been observing the Earth's upper atmosphere from space for several decades, but only over the past decade has the necessary technology begun to match our desire to observe surface air pollutants and climate-relevant trace gases in the lower troposphere, where we live and breathe. A new generation of Earth-observing satellites, capable of probing the lower troposphere, are already orbiting hundreds of kilometres above the Earth's surface with several more ready for launch or in the planning stages. Consequently, this is one of the most exciting times for the Earth system scientists who study the countless current-day physical, chemical and biological interactions between the Earth's land, ocean and atmosphere. First, I briefly review the theory behind measuring the atmosphere from space, and how these data can be used to infer surface sources and sinks of trace gases. I then present some of the science highlights associated with these data and how they can be used to improve fundamental understanding of the Earth's climate system. I conclude the paper by discussing the future role of satellite measurements of tropospheric trace gases in mitigating surface air pollution and carbon trading. PMID:18852092

  12. Fast signal transfer in a large-area X-ray CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Kim, M. S.; Kang, D. U.; Lee, D. H.; Kim, H.; Cho, G.; Jae, M.

    2014-08-01

    For 2-d X-ray imaging, such as mammography and non-destructive test, a sensor should have a large-area because the sensor for typical X-ray beams cannot use optical lens system. To make a large-area 2-d X-ray image sensor using crystal Si, a technique of tiling unit CMOS image sensors into 2 × 2 or 2 × 3 array can be used. In a unit CMOS image sensor made of most common 8-inch Si wafers, the signal line can be up to ~ 180 mm long. Then its parasitic capacitance is up to ~ 25 pF and its resistance is up to ~ 51 kΩ (0.18 μm, 1P3M process). This long signal line may enlarge the row time up to ~ 50 μsec in case of the signal from the top row pixels to the readout amplifiers located at the bottom of the sensor chip. The output signal pulse is typically characterized by three components in sequence; a charging time (a rising part), a reading time and a discharging time (a falling part). Among these, the discharging time is the longest, and it limits the speed or the frame rate of the X-ray imager. We proposed a forced discharging method which uses a bypass transistor in parallel with the current source of the column signal line. A chip for testing the idea was fabricated by a 0.18 μm process. A active pixel sensor with three transistors and a 3-π RC model of the long line were simulated together. The test results showed that the turning on-and-off of the proposed bypass transistor only during the discharging time could dramatically reduce the discharging time from ~ 50 μsec to ~ 2 μsec, which is the physically minimum time determined by the long metal line capacitance.

  13. Total-dose and charge-trapping effects in gate oxides for CMOS LSI devices

    SciTech Connect

    Singh, R.S.; Kaputa, D.J.; Korman, C.S.; Surowiec, E.P.

    1984-12-01

    The effect of gamma irradiation on CMOS devices fabricated using 3 Micron CMOS BULK process has been studied as a function of gate oxide processing and subsequent annealing. Threshold shifts, speed degradation, and power supply currents were measured as a function of total dose up to 10/sup 6/ Rad (Si). Using hot electron injection techniques, trapping densities and capture cross-sections of the traps in each oxide type have been determined at pre- and post-irradiation levels. Power supply leakage and speed performance of the devices were recovered within three to five hours by annealing them at 125/sup 0/C, +10 V bias.

  14. CMOS/SOI hardening at 100 MRAD (SiO sub 2 )

    SciTech Connect

    Leray, J.L.; Dupont-Nivet, E.; Pere, J.F.; Coic, Y.M.; Raffaelli, M. ); Auberton-Herve, A.J.; Bruel, M.; Giffard, B., Margail, J. )

    1990-12-01

    Hardened CMOS/SOI 29101 microprocessor, elementary cells and transistor shave been irradiated at levels between 10 Mrad(SiO{sub 2}) and 1 Grad(SiO{sub 2}) ({sup 60}Co and 10 keV x-rays). SIMOX buried oxide behavior in the range of 100 Mrad(SiO{sub 2}) and a channel-stopped MOS/SOI structure avoiding lateral leakage current are presented. These two items indicate the feasibility of a CMOS/SOI technology operating in the hundred Mrad(SiO{sub 2}) range.

  15. Novel CMOS readout techniques for uncooled pyroelectric IR FPA

    NASA Astrophysics Data System (ADS)

    Sun, Tai-Ping; Chin, Yuan-Lung; Chung, Wen-Yaw; Hsiung, Shen-Kan; Chou, Jung-Chuan

    1998-09-01

    Based on the application of the source follower per detector (SFD) input biasing technique, a new redout structure for the IR focal-plane-array (FPA), called the variable gain source follower per detector (VGSFD) is proposed and analyzed. The readout circuit of VGSFD of a unit cell of pyroelectric sensor under investigation, is composed of a source follower per detector circuit, high gain amplifier, and the reset switch. The VGSFD readout chip has been designed in 0.5 micrometers double-poly-double-metal n-well CMOS technology in various formats from 8 by 8 to 128 by 128. The experimental 8 by 8 VGSFD measurement results of the fabricated readout chip at room temperature have successfully verified both the readout function and performance. The high gain, low power, high sensitivity readout performances are achieved in a 50 by 50 micrometers (superscript 2) pixel size.

  16. Reliability issue on pipeline defects in CMOS memory devices

    NASA Astrophysics Data System (ADS)

    Youn, So; Terrell, Kyle; Wu, Chau-Chin; Shy, Paul; Lien, Chuen-Der

    1996-09-01

    Pipeline defects have recently been reported in a leakage source of CMOS devices when die shrink. We report the observed physical defects which shorted source and drain under .6 u short channel CMOS devices by the Wright-etching of the defective devices. We also found pipeline defects filled with phosphorous doped n-type material by the cross- sectioning of the pipeline in the channel of NMOS transistor. We also observed that devices are failing during high temperature reliability test, which causes single bit failure. This indicates that there are many potential defective die to reach assembly process even though most of detectives are discarded at wafer sort. SEM analysis identifies that location of defective parts is decorated with a pair of protruding holes at the 90 degree corner of field island of faulty pass-gate of SRAM. These pipeline defects are caused mainly by the compressed stress from field oxide. Reliability and yield have been improved since the pipeline were minimized after relieving stress on pass- gate.

  17. Open Access, Open Source and Digital Libraries: A Current Trend in University Libraries around the World

    ERIC Educational Resources Information Center

    Krishnamurthy, M.

    2008-01-01

    Purpose: The purpose of this paper is to describe the open access and open source movement in the digital library world. Design/methodology/approach: A review of key developments in the open access and open source movement is provided. Findings: Open source software and open access to research findings are of great use to scholars in developing…

  18. Ion traps fabricated in a CMOS foundry

    SciTech Connect

    Mehta, K. K.; Ram, R. J.; Eltony, A. M.; Chuang, I. L.; Bruzewicz, C. D.; Sage, J. M. Chiaverini, J.

    2014-07-28

    We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

  19. Characterization and reliability of CMOS microstructures

    NASA Astrophysics Data System (ADS)

    Fedder, Gary K.; Blanton, Ronald D. S.

    1999-08-01

    This paper provides an overview of high-aspect-ratio CMOS micromachining, focusing on materials characterization, reliability, and fault analysis. Composite microstrutural beam widths and gaps down to 1.2 micrometers are etched out of conventional CMOS dielectric, aluminum, and gate-polysilicon thin films using post-CMOS dry etching for both structural sidewall definition and for release from the substrate. Differences in stress between the multiple metal and dielectric layers cause vertical stress gradients and curl, while misalignment between layers causes lateral stress gradients and curl. Cracking is induced in a resonant fatigue structures at 620 MPa of repetitive stress after over 50 million cycles. Beams have withstood over 1.3 billion cycles at 124 MPa stress levels induced by electrostatic actuation. Failures due to process defects are classified according to the geometrical features of the defective structures. Relative probability of occurrence of each defect type is extracted from the process simulation results.

  20. Design of Low Power CMOS Read-Out with TDI Function for Infrared Linear Photodiode Array Detectors

    NASA Technical Reports Server (NTRS)

    Vizcaino, Paul; Ramirez-Angulo, Jaime; Patel, Umesh D.

    2007-01-01

    A new low voltage CMOS infrared readout circuit using the buffer-direct injection method is presented. It uses a single supply voltage of 1.8 volts and a bias current of 1uA. The time-delay integration technique is used to increase the signal to noise ratio. A current memory circuit with faulty diode detection is used to remove dark current for background compensation and to disable a photodiode in a cell if detected as faulty. Simulations are shown that verify the circuit that is currently in fabrication in 0.5ym CMOS technology.

  1. High-temperature Complementary Metal Oxide Semiconductors (CMOS)

    NASA Technical Reports Server (NTRS)

    Mcbrayer, J. D.

    1981-01-01

    The results of an investigation into the possibility of using complementary metal oxide semiconductor (CMOS) technology for high temperature electronics are presented. A CMOS test chip was specifically developed as the test bed. This test chip incorporates CMOS transistors that have no gate protection diodes; these diodes are the major cause of leakage in commercial devices.

  2. Low power, CMOS digital autocorrelator spectrometer for spaceborne applications

    NASA Technical Reports Server (NTRS)

    Chandra, Kumar; Wilson, William J.

    1992-01-01

    A 128-channel digital autocorrelator spectrometer using four 32 channel low power CMOS correlator chips was built and tested. The CMOS correlator chip uses a 2-bit multiplication algorithm and a full-custom CMOS VLSI design to achieve low DC power consumption. The digital autocorrelator spectrometer has a 20 MHz band width, and the total DC power requirement is 6 Watts.

  3. Ultrasound Current Source Density Imaging in live rabbit hearts using clinical intracardiac catheter

    NASA Astrophysics Data System (ADS)

    Li, Qian

    Ultrasound Current Source Density Imaging (UCSDI) is a noninvasive modality for mapping electrical activities in the body (brain and heart) in 4-dimensions (space + time). Conventional cardiac mapping technologies for guiding the radiofrequency ablation procedure for treatment of cardiac arrhythmias have certain limitations. UCSDI can potentially overcome these limitations and enhance the electrophysiology mapping of the heart. UCSDI exploits the acoustoelectric (AE) effect, an interaction between ultrasound pressure and electrical resistivity. When an ultrasound beam intersects a current path in a material, the local resistivity of the material is modulated by the ultrasonic pressure, and a change in voltage signal can be detected based on Ohm's Law. The degree of modulation is determined by the AE interaction constant K. K is a fundamental property of any type of material, and directly affects the amplitude of the AE signal detected in UCSDI. UCSDI requires detecting a small AE signal associated with electrocardiogram. So sensitivity becomes a major challenge for transferring UCSDI to the clinic. This dissertation will determine the limits of sensitivity and resolution for UCSDI, balancing the tradeoff between them by finding the optimal parameters for electrical cardiac mapping, and finally test the optimized system in a realistic setting. This work begins by describing a technique for measuring K, the AE interaction constant, in ionic solution and biological tissue, and reporting the value of K in excised rabbit cardiac tissue for the first time. K was found to be strongly dependent on concentration for the divalent salt CuSO4, but not for the monovalent salt NaCl, consistent with their different chemical properties. In the rabbit heart tissue, K was determined to be 0.041 +/- 0.012 %/MPa, similar to the measurement of K in physiologic saline: 0.034 +/- 0.003 %/MPa. Next, this dissertation investigates the sensitivity limit of UCSDI by quantifying the relation

  4. Mismatch negativity in recent-onset and chronic schizophrenia: a current source density analysis.

    PubMed

    Fulham, W Ross; Michie, Patricia T; Ward, Philip B; Rasser, Paul E; Todd, Juanita; Johnston, Patrick J; Thompson, Paul M; Schall, Ulrich

    2014-01-01

    Mismatch negativity (MMN) is a component of the event-related potential elicited by deviant auditory stimuli. It is presumed to index pre-attentive monitoring of changes in the auditory environment. MMN amplitude is smaller in groups of individuals with schizophrenia compared to healthy controls. We compared duration-deviant MMN in 16 recent-onset and 19 chronic schizophrenia patients versus age- and sex-matched controls. Reduced frontal MMN was found in both patient groups, involved reduced hemispheric asymmetry, and was correlated with Global Assessment of Functioning (GAF) and negative symptom ratings. A cortically-constrained LORETA analysis, incorporating anatomical data from each individual's MRI, was performed to generate a current source density model of the MMN response over time. This model suggested MMN generation within a temporal, parietal and frontal network, which was right hemisphere dominant only in controls. An exploratory analysis revealed reduced CSD in patients in superior and middle temporal cortex, inferior and superior parietal cortex, precuneus, anterior cingulate, and superior and middle frontal cortex. A region of interest (ROI) analysis was performed. For the early phase of the MMN, patients had reduced bilateral temporal and parietal response and no lateralisation in frontal ROIs. For late MMN, patients had reduced bilateral parietal response and no lateralisation in temporal ROIs. In patients, correlations revealed a link between GAF and the MMN response in parietal cortex. In controls, the frontal response onset was 17 ms later than the temporal and parietal response. In patients, onset latency of the MMN response was delayed in secondary, but not primary, auditory cortex. However amplitude reductions were observed in both primary and secondary auditory cortex. These latency delays may indicate relatively intact information processing upstream of the primary auditory cortex, but impaired primary auditory cortex or cortico-cortical or

  5. A large sulfate aerosol source during the winter haze in China missing from current models

    NASA Astrophysics Data System (ADS)

    Wang, Y.; Zhang, Q.; Jiang, J.; Zhou, W.; Wang, B.

    2013-12-01

    Regional haze with PM2.5 levels exceeding ten folds of the WHO standard has become the largest air quality concerns in China. In Jan 2013, an episode with daily PM2.5 exceeding 500 ug/m3 occurred for multiple days over North China in Jan 2013, threatening the health of a population of more than 150 million. In situ measurements reveal that sulfate has the largest increase during this winter episode in terms of both absolute mass concentrations and fractions in PM2.5. The enhancement factor during the haze is 9.0 for sulfate, much larger than that of OC (2.9) and EC (2.6). This Jan episode offers an interesting opportunity to test current understanding of aerosol formation mechanisms in winter for this region. We find that while the GEOS-Chem nested-grid chemical transport model (CTM) has some success in simulating PM2.5 in Jan 2013, it significantly underestimates the enhancement of sulfate during the sever haze period, suggesting a missing chemical formation mechanism of sulfate during the winter haze in the model. Based on survey of previous lab studies and observational constraints, we propose that the conversion of SO2 to sulfate via heterogeneous reactions on pre-existing wet and deliquesced aerosols is a significant source of sulfate under appropriate relative humidity conditions during the haze. Adding this mechanism in the model proves to be the most effective in reconciling model results with the observed sulfate aerosol concentrations.

  6. Early effect of NEURAPAS® balance on current source density (CSD) of human EEG

    PubMed Central

    2011-01-01

    Psychiatric patients often suffer from stress, anxiety and depression. Various plant extracts are known to fight stress (valerian), anxiety (passion flower) or depression (St. John's wort). NEURAPAS® balance is a mixture of these three extracts and has been designed to cover this complex of psychiatric conditions. The study was initiated to quantitatively assess the effect of this combination on brain electric activity. Method Quantitative electroencephalogram (EEG) current source density (CSD) recording from 16 healthy male and female human volunteers (average age 49 years) was used in a randomized, placebo-controlled cross over study. Recordings were performed 0. 5, 1. 5, 3 and 4 hours after administration of the preparations under the conditions of 6 min eyes open and 5 min d2 concentration test, mathematical calculation test and memory test, respectively. All variables (electric power within 6 frequency ranges at 17 electrode positions) were fed into a linear discriminant analysis (eyes open condition). In the presence of mental load these variables were used to construct brain maps of frequency changes. Results Under the condition of mental load, centro-parietal spectral power remained statistically significantly lower within alpha1, alpha2 and beta1 frequencies in the presence of verum in comparison to placebo. Discriminant analysis revealed a difference to placebo 3 and 4 hours after intake of 6 tablets of NEURAPAS® balance. Data location within the polydimensional space was projected into the area of the effects of sedative and anti-depressive reference drugs tested earlier under identical conditions. Results appeared closer to the effects of fluoxetine than to St. John's wort. Conclusions Analysis of the neurophysiological changes following the intake of NEURAPAS® balance revealed a similarity of frequency changes to those of calming and anti-depressive drugs on the EEG without impairment of cognition. Trial registration ClinicalTrials.gov: NCT01047605

  7. Current state, sources, and potential risk of heavy metals in sediments of Three Gorges Reservoir, China.

    PubMed

    Bing, Haijian; Zhou, Jun; Wu, Yanhong; Wang, Xiaoxiao; Sun, Hongyang; Li, Rui

    2016-07-01

    Heavy metal (HM) contamination in sediments of Three Gorges Reservoir (TGR) is a particularly important issue for the safety of water quality due to the potential threats of metal toxicity to local and downstream human health. Surface sediments from riparian and submerged areas in the entire TGR mainstream were collected in 2014 to investigate the spatial distribution of HMs (Cd, Cu, Pb, and Zn), identify their possible sources, and assess their potential risk by multiple indices and metal fraction. Results showed that the concentrations of HMs in the sediments increased after the TGR operation, but were lower than those in other Chinese rivers of developed areas. The acid-soluble Cd accounted for more than 50% of total Cd in the sediments, whereas that of other HMs was very low. The Cd concentrations in the riparian sediments increased towards the dam; however, other metals in the riparian sediments and all HMs in the submerged sediments did not show any regular variation trend spatially. The stocks of HMs were significantly higher in the submerged sediments than in the riparian sediments. The high accumulation of HMs in the riparian sediments emerged between Fuling and Fengjie, and those in the submerged sediments existed in the near dam areas. Grain size and Fe/Mn oxides controlled the mobility and transfer of HMs in the sediments. Human activity in the catchment including industrial and agricultural production, shipping industry, mining, etc., increased inputs of HMs in the sediments, and altered their spatial distribution patterns. The sediments were moderately to highly contaminated by Cd, and slightly contaminated by other HMs. The results indicate the current priority of Cd contamination in the TGR, and will conduce to ecological protection in the TGR region. PMID:27131806

  8. Clinical implications of quantitative electroencephalography and current source density in patients with Alzheimer's disease.

    PubMed

    Kim, Ji-Sun; Lee, Seung-Hwan; Park, Gewnhi; Kim, Sangrae; Bae, Sung-Man; Kim, Do-Won; Im, Chang-Hwan

    2012-10-01

    This study examined whether quantitative electroencephalography (qEEG) and current source density (CSD) can be used to evaluate symptom severity in Alzheimer's disease (AD) patients. Thirty AD patients (13 mild and 17 moderate severity) and 30 normal control (NC) subjects were recruited. The Korean version of the Consortium to Establish a Registry for Alzheimer's Disease Assessment Packet and the Global Deterioration Scale were measured. qEEG and CSD data were analyzed in five frequency bands: delta (1-3 Hz), theta (4-7 Hz), alpha (8-12 Hz), beta (13-25 Hz), and gamma (30-50 Hz). Compared with the NC subjects, the moderate AD patients had significantly increased theta and decreased beta power. Compared with the mild AD patients, the moderate AD patients had significantly decreased beta power. In the AD patients, the theta power was significantly correlated with a poor performance for global cognition; however, beta power was positively correlated with a good performance for global cognition, attention, memory, visuospatial function, and executive function. The CSD of the theta band in the superior temporal gyrus, transverse temporal gyrus, insula, postcentral gyrus, cuneus, and lingual gyrus was significantly different between NC subjects and moderate AD patients and between mild and moderate AD patients. The theta CSD of these regions was significantly correlated with a poor performance for global cognition, memory, visuospatial function, execution, and language. The results suggest that qEEG and the CSD of the theta and beta bands are useful biological markers in AD patients. PMID:22736322

  9. End-of-fabrication CMOS process monitor

    NASA Technical Reports Server (NTRS)

    Buehler, M. G.; Allen, R. A.; Blaes, B. R.; Hannaman, D. J.; Lieneweg, U.; Lin, Y.-S.; Sayah, H. R.

    1990-01-01

    A set of test 'modules' for verifying the quality of a complementary metal oxide semiconductor (CMOS) process at the end of the wafer fabrication is documented. By electrical testing of specific structures, over thirty parameters are collected characterizing interconnects, dielectrics, contacts, transistors, and inverters. Each test module contains a specification of its purpose, the layout of the test structure, the test procedures, the data reduction algorithms, and exemplary results obtained from 3-, 2-, or 1.6-micrometer CMOS/bulk processes. The document is intended to establish standard process qualification procedures for Application Specific Integrated Circuits (ASIC's).

  10. Extracted ion current density in close-coupling multi-antenna type radio frequency driven ion source: CC-MATIS

    SciTech Connect

    Oka, Y. E-mail: oka@LHD.nifs.ac.jp; Shoji, T.

    2014-02-15

    Positive ions are extracted by using a small extractor from the Close-Coupling Multi-Antenna Type radio frequency driven Ion Source. Two types of RF antenna are used. The maximum extracted ion current density reaches 0.106 A/cm{sup 2}. The RF net power efficiency of the extracted ion current density under standard condition is 11.6 mA/cm{sup 2}/kW. The efficiency corresponds to the level of previous beam experiments on elementary designs of multi-antenna sources, and also to the efficiency level of a plasma driven by a filament in the same chamber. The multi-antenna type RF plasma source is promising for all metal high density ion sources in a large volume chamber.

  11. Real-time multi-DSP control of three-phase current-source unity power factor PWM rectifier

    SciTech Connect

    Xiao Wang; Boon-Teck Ooi . Dept. of Electrical Engineering)

    1993-07-01

    The design of a real-time multi-DSP controller for a high-quality six-valve three-phase current-source unity power factor PWM rectifier is discussed in this paper. With the decoupler preprocessor and the dynamic trilogic PWM trigger scheme, each of the three input currents can be controlled independently. Based on the a-b-c frame system model and the fast parallel computer control, the pole-placement control method is implemented successfully to achieve fast response in the ac currents. The low-frequency resonance in the ac filter L-C networks has been damped effectively. The experimental results are obtained from a 1-kVA bipolar transistor current-source PWM rectifier with a real-time controller using three TMS320C25 DSP's.

  12. Current Research on Molasses as an Alternative Energy Source for Organic Dairy Herds

    Technology Transfer Automated Retrieval System (TEKTRAN)

    As organic grain prices have increased and organic milk prices have decreased, dairy farmers are seeking lower-cost supplementation strategies. Sugarcane molasses, a rich source of sucrose, seems to be a viable option as a source of energy. Molasses frequently costs less per pound of dry matter than...

  13. Management of agricultural nonpoint source pollution in China: current status and challenges.

    PubMed

    Wang, Xiaoyan

    2006-01-01

    Water quality in China shows an overall trend of deterioration in recent years. Nonpoint source pollution from agricultural and rural regions is the leading source of water pollution. The agricultural nonpoint source pollutants are mainly from fertilization of cropland, excessive livestock and poultry breeding and undefined disposal of daily living wastes in rural areas. Agricultural nonpoint sources contribute the main source of pollution to most watersheds in China, but they are ignored in management strategy and policy. Due to the lack of full understanding of water pollution control and management and the lack of perfect water quality standard systems and practical legislative regulations, agricultural nonpoint source pollution will become one of the biggest challenges to the sustainable development of rural areas and to society as a whole. The system for agricultural nonpoint source pollution control in China should include an appropriate legislation and policy framework, financing mechanisms, monitoring system, and technical guidelines and standards. The management of agricultural nonpoint source pollution requires multidisciplinary approaches that will involve a range of government departments, institutions and the public. PMID:16594318

  14. Effect of high energy electrons on H- production and destruction in a high current DC negative ion source for cyclotron

    NASA Astrophysics Data System (ADS)

    Onai, M.; Etoh, H.; Aoki, Y.; Shibata, T.; Mattei, S.; Fujita, S.; Hatayama, A.; Lettry, J.

    2016-02-01

    Recently, a filament driven multi-cusp negative ion source has been developed for proton cyclotrons in medical applications. In this study, numerical modeling of the filament arc-discharge source plasma has been done with kinetic modeling of electrons in the ion source plasmas by the multi-cusp arc-discharge code and zero dimensional rate equations for hydrogen molecules and negative ions. In this paper, main focus is placed on the effects of the arc-discharge power on the electron energy distribution function and the resultant H- production. The modelling results reasonably explains the dependence of the H- extraction current on the arc-discharge power in the experiments.

  15. Integration of solid-state nanopores in a 0.5 μm CMOS foundry process.

    PubMed

    Uddin, A; Yemenicioglu, S; Chen, C-H; Corigliano, E; Milaninia, K; Theogarajan, L

    2013-04-19

    High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA-base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the integration of solid-state nanopore devices in a commercial complementary metal-oxide-semiconductor (CMOS) potentiostat chip implemented in On-Semiconductor's 0.5 μm technology. Nanopore membranes incorporating electrodes are fabricated by post-CMOS micromachining utilizing the n+ polysilicon/SiO2/n+ polysilicon capacitor structure available in the aforementioned process. Nanopores are created in the CMOS process by drilling in a transmission electron microscope and shrinking by atomic layer deposition. We also describe a batch fabrication method to process a large of number of electrode-embedded nanopores with sub-10 nm diameter across CMOS-compatible wafers by electron beam lithography and atomic layer deposition. The CMOS-compatibility of our fabrication process is verified by testing the electrical functionality of on-chip circuitry. We observe high current leakage with the CMOS nanopore devices due to the ionic diffusion through the SiO2 membrane. To prevent this leakage, we coat the membrane with Al2O3, which acts as an efficient diffusion barrier against alkali ions. The resulting nanopore devices also exhibit higher robustness and lower 1/f noise as compared to SiO2 and SiNx. Furthermore, we propose a theoretical model for our low-capacitance CMOS nanopore devices, showing good agreement with the experimental value. In addition, experiments and theoretical models of translocation studies are presented using 48.5 kbp λ-DNA in order to prove the functionality of on-chip pores coated with Al2O3. PMID:23519330

  16. Integration of solid-state nanopores in a 0.5 μm cmos foundry process

    PubMed Central

    Uddin, A; Yemenicioglu, S; Chen, C-H; Corigliano, E; Milaninia, K; Theogarajan, L

    2013-01-01

    High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the integration of solid-state nanopore devices in a commercial complementary metal-oxide semiconductor (CMOS) potentiostat chip implemented in On-Semiconductor’s 0.5 μm technology. Nanopore membranes incorporating electrodes are fabricated by post-CMOS micromachining utilizing the N+ polysilicon/SiO2/N+ polysilicon capacitor structure available in the aforementioned process. Nanopores are created in the CMOS process by drilling in a transmission electron microscope and shrinking by atomic layer deposition. We also describe a batch fabrication method to process a large of number of electrode-embedded nanopores with sub-10 nm diameter across CMOS-compatible wafers by electron beam lithography and atomic layer deposition. The CMOS-compatibility of our fabrication process is verified by testing the electrical functionality of on-chip circuitry. We observe high current leakage with the CMOS nanopore devices due to the ionic diffusion through the SiO2 membrane. To prevent this leakage, we coat the membrane with Al2O3 which acts as an efficient diffusion barrier against alkali ions. The resulting nanopore devices also exhibit higher robustness and lower 1/f noise as compared to SiO2 and SiNx. Furthermore, we propose a theoretical model for our low-capacitance CMOS nanopore devices, showing good agreement with the experimental value. In addition, experiments and theoretical models of translocation studies are presented using 48.5 kbp λ-DNA in order to prove the functionality of on-chip pores coated with Al2O3. PMID:23519330

  17. Integration of solid-state nanopores in a 0.5 μm CMOS foundry process

    NASA Astrophysics Data System (ADS)

    Uddin, A.; Yemenicioglu, S.; Chen, C.-H.; Corigliano, E.; Milaninia, K.; Theogarajan, L.

    2013-04-01

    High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA-base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the integration of solid-state nanopore devices in a commercial complementary metal-oxide-semiconductor (CMOS) potentiostat chip implemented in On-Semiconductor’s 0.5 μm technology. Nanopore membranes incorporating electrodes are fabricated by post-CMOS micromachining utilizing the n+ polysilicon/SiO2/n+ polysilicon capacitor structure available in the aforementioned process. Nanopores are created in the CMOS process by drilling in a transmission electron microscope and shrinking by atomic layer deposition. We also describe a batch fabrication method to process a large of number of electrode-embedded nanopores with sub-10 nm diameter across CMOS-compatible wafers by electron beam lithography and atomic layer deposition. The CMOS-compatibility of our fabrication process is verified by testing the electrical functionality of on-chip circuitry. We observe high current leakage with the CMOS nanopore devices due to the ionic diffusion through the SiO2 membrane. To prevent this leakage, we coat the membrane with Al2O3, which acts as an efficient diffusion barrier against alkali ions. The resulting nanopore devices also exhibit higher robustness and lower 1/f noise as compared to SiO2 and SiNx. Furthermore, we propose a theoretical model for our low-capacitance CMOS nanopore devices, showing good agreement with the experimental value. In addition, experiments and theoretical models of translocation studies are presented using 48.5 kbp λ-DNA in order to prove the functionality of on-chip pores coated with Al2O3.

  18. Amorphous selenium direct detection CMOS digital x-ray imager with 25 micron pixel pitch

    NASA Astrophysics Data System (ADS)

    Scott, Christopher C.; Abbaszadeh, Shiva; Ghanbarzadeh, Sina; Allan, Gary; Farrier, Michael; Cunningham, Ian A.; Karim, Karim S.

    2014-03-01

    We have developed a high resolution amorphous selenium (a-Se) direct detection imager using a large-area compatible back-end fabrication process on top of a CMOS active pixel sensor having 25 micron pixel pitch. Integration of a-Se with CMOS technology requires overcoming CMOS/a-Se interfacial strain, which initiates nucleation of crystalline selenium and results in high detector dark currents. A CMOS-compatible polyimide buffer layer was used to planarize the backplane and provide a low stress and thermally stable surface for a-Se. The buffer layer inhibits crystallization and provides detector stability that is not only a performance factor but also critical for favorable long term cost-benefit considerations in the application of CMOS digital x-ray imagers in medical practice. The detector structure is comprised of a polyimide (PI) buffer layer, the a-Se layer, and a gold (Au) top electrode. The PI layer is applied by spin-coating and is patterned using dry etching to open the backplane bond pads for wire bonding. Thermal evaporation is used to deposit the a-Se and Au layers, and the detector is operated in hole collection mode (i.e. a positive bias on the Au top electrode). High resolution a-Se diagnostic systems typically use 70 to 100 μm pixel pitch and have a pre-sampling modulation transfer function (MTF) that is significantly limited by the pixel aperture. Our results confirm that, for a densely integrated 25 μm pixel pitch CMOS array, the MTF approaches the fundamental material limit, i.e. where the MTF begins to be limited by the a-Se material properties and not the pixel aperture. Preliminary images demonstrating high spatial resolution have been obtained from a frst prototype imager.

  19. Radiation Tolerance of 65nm CMOS Transistors

    DOE PAGESBeta

    Krohn, M.; Bentele, B.; Christian, D. C.; Cumalat, J. P.; Deptuch, G.; Fahim, F.; Hoff, J.; Shenai, A.; Wagner, S. R.

    2015-12-11

    We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20°C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.

  20. SEU hardening of CMOS memory circuit

    NASA Technical Reports Server (NTRS)

    Whitaker, S.; Canaris, J.; Liu, K.

    1990-01-01

    This paper reports a design technique to harden CMOS memory circuits against Single Event Upset (SEU) in the space environment. A RAM cell and Flip Flop design are presented to demonstrate the method. The Flip Flop was used in the control circuitry for a Reed Solomon encoder designed for the Space Station.

  1. Low power SEU immune CMOS memory circuits

    NASA Technical Reports Server (NTRS)

    Liu, M. N.; Whitaker, Sterling

    1992-01-01

    The authors report a design improvement for CMOS static memory circuits hardened against single event upset (SEU) using a recently proposed logic/circuit design technique. This improvement drastically reduces static power consumption, reduces the number of transistors required in a D flip-flop design, and eliminates the possibility of capturing an upset state in the slave section during a clock transition.

  2. Fully CMOS-compatible titanium nitride nanoantennas

    NASA Astrophysics Data System (ADS)

    Briggs, Justin A.; Naik, Gururaj V.; Petach, Trevor A.; Baum, Brian K.; Goldhaber-Gordon, David; Dionne, Jennifer A.

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  3. A fail-safe CMOS logic gate

    NASA Technical Reports Server (NTRS)

    Bobin, V.; Whitaker, S.

    1990-01-01

    This paper reports a design technique to make Complex CMOS Gates fail-safe for a class of faults. Two classes of faults are defined. The fail-safe design presented has limited fault-tolerance capability. Multiple faults are also covered.

  4. CMOS preamplifiers for detectors large and small

    SciTech Connect

    O`Connor, P.

    1997-12-31

    We describe four CMOS preamplifiers developed for multiwire proportional chambers (MWPC) and silicon drift detectors (SDD) covering a capacitance range from 150 pF to 0.15 pF. Circuit techniques to optimize noise performance, particularly in the low-capacitance regime, are discussed.

  5. Low-Power SOI CMOS Transceiver

    NASA Technical Reports Server (NTRS)

    Fujikawa, Gene (Technical Monitor); Cheruiyot, K.; Cothern, J.; Huang, D.; Singh, S.; Zencir, E.; Dogan, N.

    2003-01-01

    The work aims at developing a low-power Silicon on Insulator Complementary Metal Oxide Semiconductor (SOI CMOS) Transceiver for deep-space communications. RF Receiver must accomplish the following tasks: (a) Select the desired radio channel and reject other radio signals, (b) Amplify the desired radio signal and translate them back to baseband, and (c) Detect and decode the information with Low BER. In order to minimize cost and achieve high level of integration, receiver architecture should use least number of external filters and passive components. It should also consume least amount of power to minimize battery cost, size, and weight. One of the most stringent requirements for deep-space communication is the low-power operation. Our study identified that two candidate architectures listed in the following meet these requirements: (1) Low-IF receiver, (2) Sub-sampling receiver. The low-IF receiver uses minimum number of external components. Compared to Zero-IF (Direct conversion) architecture, it has less severe offset and flicker noise problems. The Sub-sampling receiver amplifies the RF signal and samples it using track-and-hold Subsampling mixer. These architectures provide low-power solution for the short- range communications missions on Mars. Accomplishments to date include: (1) System-level design and simulation of a Double-Differential PSK receiver, (2) Implementation of Honeywell SOI CMOS process design kit (PDK) in Cadence design tools, (3) Design of test circuits to investigate relationships between layout techniques, geometry, and low-frequency noise in SOI CMOS, (4) Model development and verification of on-chip spiral inductors in SOI CMOS process, (5) Design/implementation of low-power low-noise amplifier (LNA) and mixer for low-IF receiver, and (6) Design/implementation of high-gain LNA for sub-sampling receiver. Our initial results show that substantial improvement in power consumption is achieved using SOI CMOS as compared to standard CMOS

  6. 3D integration of sub-surface photonics with CMOS

    NASA Astrophysics Data System (ADS)

    Jalali, Bahram; Indukuri, Tejaswi; Koonath, Prakash

    2006-02-01

    The integration of photonics and electronics on a single silicon substrate requires technologies that can add optical functionalities without significantly sacrificing valuable wafer area. To this end, we have developed an innovative fabrication process, called SIMOX 3-D Sculpting, that enables monolithic optoelectronic integration in a manner that does not compromise the economics of CMOS manufacturing. In this technique, photonic devices are realized in subsurface silicon layers that are separated from the surface silicon layer by an intervening SiO II layer. The surface silicon layer may then be utilized for electronic circuitry. SIMOX 3-D sculpting involves (1) the implantation of oxygen ions into a patterned silicon substrate followed by (2) high temperature anneal to create buried waveguide-based photonic devices. This process has produced subterranean microresonators with unloaded quality factors of 8000 and extinction ratios >20dB. On the surface silicon layers, MOS transistor structures have been fabricated. The small cross-sectional area of the waveguides lends itself to the realization of nonlinear optical devices. We have previously demonstrated spectral broadening and continuum generation in silicon waveguides utilizing Kerr optical nonlinearity. This may be combined with microresonator filters for on-chip supercontiuum generation and spectral carving. The monolithic integration of CMOS circuits and optical modulators with such multi-wavelength sources represent an exciting avenue for silicon photonics.

  7. Comment on "Effects of Magnetic Field Gradient on Ion Beam Current in Cylindrical Hall Ion Source

    SciTech Connect

    Raitses, Y.; Smirnov A.; Fisch, N.J.

    2008-08-29

    It is argued that the key difference of the cylindrical Hall thruster (CHT) as compared to the end-Hall ion source cannot be exclusively attributed to the magnetic field topology [Tang et al. J. Appl. Phys., 102, 123305 (2007)]. With a similar mirror-type topology, the CHT configuration provides the electric field with nearly equipotential magnetic field surfaces and a better suppression of the electron cross-field transport, as compared to both the end-Hall ion source and the cylindrical Hall ion source of Tang et al.

  8. Gas field ion source current stability for trimer and single atom terminated W(111) tips

    SciTech Connect

    Urban, Radovan; Wolkow, Robert A.; Pitters, Jason L.

    2012-06-25

    Tungsten W(111) oriented trimer-terminated tips as well as single atom tips, fabricated by a gas and field assisted etching and evaporation process, were investigated with a view to scanning ion microscopy and ion beam writing applications. In particular, ion current stability was studied for helium and neon imaging gases. Large ion current fluctuations from individual atomic sites were observed when a trimer-terminated tip was used for the creation of neon ion beam. However, neon ion current was stable when a single atom tip was employed. No such current oscillations were observed for either a trimer or a single atom tip when imaged with helium.

  9. Influence of anomalous particle diffusion on the current system formation and coherence of Pi2 geomagnetic pulsation local ionospheric sources

    NASA Astrophysics Data System (ADS)

    Petlenko, A. V.; Kopytenko, Yu. A.

    2015-01-01

    The coherence conditions for local ionospheric sources of Pi2 high-latitude geomagnetic pulsations in the 6-8 mHz frequency band were studied with a method for representing their component spatial distributions by vertical magnetic dipole field integrals over random walk trajectories in the ionospheric horizontal plane. High-quality representations are reached when the field intensity is proportional to a self-intersection density that has spatial and time walk trajectory discontinuities. According to anomalous diffusion theory, the trajectory of the subordinate Levy process is characterized by the stabilization of turning points grouped near pulsation local ionospheric sources. This makes it possible to simulate disturbances of the Pi2 high-latitude pulsation field by a uniform motion along the Hall ionospheric source Levy trajectories with short-term pulsed current switching on-off. A coherent redistribution of the Pi2 local ionospheric source intensity and several observed specific features in the source field distribution dynamics are explained by the independent processes of local field-aligned current formation and intensification-weakening of pulsations caused by the current carrier shift relative to wandering Levy turning points and a stationary observer.

  10. Ion current detector for high pressure ion sources for monitoring separations

    DOEpatents

    Smith, Richard D.; Wahl, Jon H.; Hofstadler, Steven A.

    1996-01-01

    The present invention relates generally to any application involving the monitoring of signal arising from ions produced by electrospray or other high pressure (>100 torr) ion sources. The present invention relates specifically to an apparatus and method for the detection of ions emitted from a capillary electrophoresis (CE) system, liquid chromatography, or other small-scale separation methods. And further, the invention provides a very simple diagnostic as to the quality of the separation and the operation of an electrospray source.

  11. A CMOS-MEMS arrayed resonant-gate field effect transistor (RGFET) oscillator

    NASA Astrophysics Data System (ADS)

    Chin, Chi-Hang; Li, Ming-Huang; Chen, Chao-Yu; Wang, Yu-Lin; Li, Sheng-Shian

    2015-11-01

    A high-frequency CMOS-MEMS arrayed resonant-gate field effect transistor (RGFET) fabricated by a standard 0.35 μm 2-poly-4-metal CMOS-MEMS platform is implemented to enable a Pierce-type oscillator. The proposed arrayed RGFET exhibits low motional impedance of only 5 kΩ under a purely capacitive transduction and decent power handling capability. With such features, the implemented oscillator shows impressive phase noise of  -117 dBc Hz-1 at the far-from-carrier offset (1 MHz). In this work, we design a clamped-clamped beam (CCB) arrayed resonator utilizing a high-velocity mechanical coupling scheme to serve as the resonant-gate array. To achieve a functional arrayed RGFET, a corresponding FET array is directly placed underneath the resonant gate array to convert the motional current on the resonant-gate array into a voltage output with a tunable transconductance gain. To understand the behavior of the proposed device, an equivalent circuit model consisting of the resonant unit and FET is also provided. To verify the effects of the post-CMOS process on device performance, a conventional MOS I D current measurement is carried out. Finally, a CMOS-MEMS arrayed RGFET oscillator is realized by utilizing a Pierce oscillator architecture, showing decent phase noise performance that benefits from the array design to alleviate the nonlinear effect of the resonant gate.

  12. Overview of CMOS process and design options for image sensor dedicated to space applications

    NASA Astrophysics Data System (ADS)

    Martin-Gonthier, P.; Magnan, P.; Corbiere, F.

    2005-10-01

    With the growth of huge volume markets (mobile phones, digital cameras...) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain. Space applications can of course benefit from these improvements. To illustrate this evolution, this paper reports results from three technologies that have been evaluated with test vehicles composed of several sub arrays designed with some space applications as target. These three technologies are CMOS standard, improved and sensor optimized process in 0.35μm generation. Measurements are focussed on quantum efficiency, dark current, conversion gain and noise. Other measurements such as Modulation Transfer Function (MTF) and crosstalk are depicted in [1]. A comparison between results has been done and three categories of CMOS process for image sensors have been listed. Radiation tolerance has been also studied for the CMOS improved process in the way of hardening the imager by design. Results at 4, 15, 25 and 50 krad prove a good ionizing dose radiation tolerance applying specific techniques.

  13. A cookbook for building a high-current dimpled H magnetron source for accelerators

    SciTech Connect

    Bollinger, Daniel S.; Karns, Patrick R.; Tan, Cheng -Yang

    2015-10-30

    A high-current (>50 mA) dimpled H magnetron source has been built at Fermilab for supplying H beam to the entire accelerator complex. Despite many decades of expertise with slit H magnetron sources at Fermilab, we were faced with many challenges from the dimpled H magnetron source, which needed to be overcome in order to make it operational. Dimpled H sources for high-energy physics are not new: Brookhaven National Laboratory has operated a dimpled H- source for more than two decades. However, the transference of that experience to Fermilab took about two years because a cookbook for building this type of source did not exist and seemingly innocuous or undocumented choices had a huge impact on the success or failure for this type of source. Moreover, it is the goal of this paper to document the reasons for these choices and to present a cookbook for building and operating dimpled H magnetron sources.

  14. The effect of the random distribution of electronic components in the output characteristics of the Howland current source

    NASA Astrophysics Data System (ADS)

    Bertemes-Filho, P.; Felipe, A.

    2013-04-01

    When a Howland source is designed, the components are chosen so that the designed source has the desired characteristics. However, the operational amplifier limitations and resistor tolerances causes undesired behaviours. This work proposes to take in account the influence of the random distribution of the commercial resistors in the Howland circuit over the frequency range of 10 Hz to 10 MHz. The probability density function due to small changes over the resistors was calculated by using an analytical model. Results show that both output current and impedance are very sensitive to the resistor tolerances. It is shown that the output impedance is very dependent on the open-loop gain of the Opamp rather than the resistor tolerances, especially at higher frequencies. This might improve the implementations of real current source used in electrical bioimpedance.

  15. Secondary emission magnetron injection gun as high current durable electron source

    SciTech Connect

    Cherenshchikov, S.A.; Opanassenko, A.N.; Dovbnya, A.N.; Zakutin, V.V.

    1995-07-05

    Peculiarities of operation of secondary electron emission cathodes and different types of their excitation are discussed. On the base of available experimental data possibilities are analyzed for obtaining maximum achievable beam currents and densities. It is shown that the cross-field geometry is best-suited for achieving the highest current densities and peak beam currents. Experimental observables as regards beam characteristics of the secondary-emission magnetron gun (SEMIG) are presented. Prospects for obtaining beam current densities in excess of 100 A/cm{sup 2} at beam current above 100 A are discussed for cathode life times 20 to 100 thousand hours. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  16. Noise Reduction Techniques and Scaling Effects towards Photon Counting CMOS Image Sensors

    PubMed Central

    Boukhayma, Assim; Peizerat, Arnaud; Enz, Christian

    2016-01-01

    This paper presents an overview of the read noise in CMOS image sensors (CISs) based on four-transistors (4T) pixels, column-level amplification and correlated multiple sampling. Starting from the input-referred noise analytical formula, process level optimizations, device choices and circuit techniques at the pixel and column level of the readout chain are derived and discussed. The noise reduction techniques that can be implemented at the column and pixel level are verified by transient noise simulations, measurement and results from recently-published low noise CIS. We show how recently-reported process refinement, leading to the reduction of the sense node capacitance, can be combined with an optimal in-pixel source follower design to reach a sub-0.3erms- read noise at room temperature. This paper also discusses the impact of technology scaling on the CIS read noise. It shows how designers can take advantage of scaling and how the Metal-Oxide-Semiconductor (MOS) transistor gate leakage tunneling current appears as a challenging limitation. For this purpose, both simulation results of the gate leakage current and 1/f noise data reported from different foundries and technology nodes are used.

  17. A comparison of two-dimensional techniques for converting magnetocardiogram maps into effective current source distributions

    NASA Astrophysics Data System (ADS)

    Ogata, K.; Kandori, A.; Miyashita, T.; Sekihara, K.; Tsukada, K.

    2011-01-01

    The aim of this study was to develop a method for converting the pseudo two-dimensional current given by a current-arrow map (CAM) into the physical current. The physical current distribution is obtained by the optimal solution in a least mean square sense with Tikhonov regularization (LMSTR). In the current dipole simulation, the current pattern differences (ΔJ) between the results of the CAM and the LMSTR with several regularization parameters (α = 10-1-10-15) are calculated. In magnetocardiographic (MCG) analysis, the depth (zd) of a reconstruction plane is chosen by using the coordinates of the sinus node, which is estimated from MCG signals at the early p-wave. The ΔJs at p-wave peaks, QRS-complex peaks, and T-wave peaks of MCG signals for healthy subjects are calculated. Furthermore, correlation coefficients and regression lines are also calculated from the current values of the CAM and the LMSTR during p-waves, QRS-complex, and T-waves of MCG signals. In the simulation, the ΔJs (α ≈ 10-10) had a minimal value. The ΔJs (α = 10-10) at p-wave peaks, QRS-complex peaks, and T-wave peaks of MCG signals for healthy subjects also had minimal value. The correlation coefficients of the current values given by the CAM and the LMSTR (α = 10-10) were greater than 0.9. Furthermore, slopes (y) of the regression lines are correlated with the depth (zd) (r = -0.93). Consequently, the CAM value can be transformed into the LMSTR current value by multiplying it by the slope (y) obtained from the depth (zd). In conclusion, the result given by the CAM can be converted into an effective physical current distribution by using the depth (zd).

  18. Resting State Functional Connectivity MRI among Spectral MEG Current Sources in Children on the Autism Spectrum.

    PubMed

    Datko, Michael; Gougelet, Robert; Huang, Ming-Xiong; Pineda, Jaime A

    2016-01-01

    Social and communicative impairments are among the core symptoms of autism spectrum disorders (ASD), and a great deal of evidence supports the notion that these impairments are associated with aberrant functioning and connectivity of various cortical networks. The present study explored the links between sources of MEG amplitude in various frequency bands and functional connectivity MRI in the resting state. The goal of combining these modalities was to use sources of neural oscillatory activity, measured with MEG, as functionally relevant seed regions for a more traditional pairwise fMRI connectivity analysis. We performed a seed-based connectivity analysis on resting state fMRI data, using seed regions derived from frequency-specific amplitude sources in resting state MEG data in the same nine subjects with ASD (10-17 years of age). We then compared fMRI connectivity among these MEG-source-derived regions between participants with autism and typically developing, age-matched controls. We used a source modeling technique designed for MEG data to detect significant amplitude sources in six frequency bands: delta (2-4 Hz), theta (4-8 Hz), alpha (8-12 Hz), beta (12-30 Hz), low gamma (30-60 Hz), and high gamma (60-120 Hz). MEG-derived source maps for each participant were co-registered in standard MNI space, and group-level source maps were obtained for each frequency. For each frequency band, the 10 largest clusters resulting from these t-tests were used as regions of interest (ROIs) for the fMRI functional connectivity analysis. Pairwise BOLD signal correlations were obtained between each pair of these ROIs for each frequency band. Each pairwise correlation was compared between the ASD and TD groups using t-tests. We also constrained these pairwise correlations to known network structures, resulting in a follow-up set of correlation matrices specific to each network we considered. Frequency-specific MEG sources had distinct patterns of fMRI resting state functional

  19. Resting State Functional Connectivity MRI among Spectral MEG Current Sources in Children on the Autism Spectrum

    PubMed Central

    Datko, Michael; Gougelet, Robert; Huang, Ming-Xiong; Pineda, Jaime A.

    2016-01-01

    Social and communicative impairments are among the core symptoms of autism spectrum disorders (ASD), and a great deal of evidence supports the notion that these impairments are associated with aberrant functioning and connectivity of various cortical networks. The present study explored the links between sources of MEG amplitude in various frequency bands and functional connectivity MRI in the resting state. The goal of combining these modalities was to use sources of neural oscillatory activity, measured with MEG, as functionally relevant seed regions for a more traditional pairwise fMRI connectivity analysis. We performed a seed-based connectivity analysis on resting state fMRI data, using seed regions derived from frequency-specific amplitude sources in resting state MEG data in the same nine subjects with ASD (10–17 years of age). We then compared fMRI connectivity among these MEG-source-derived regions between participants with autism and typically developing, age-matched controls. We used a source modeling technique designed for MEG data to detect significant amplitude sources in six frequency bands: delta (2–4 Hz), theta (4–8 Hz), alpha (8–12 Hz), beta (12–30 Hz), low gamma (30–60 Hz), and high gamma (60–120 Hz). MEG-derived source maps for each participant were co-registered in standard MNI space, and group-level source maps were obtained for each frequency. For each frequency band, the 10 largest clusters resulting from these t-tests were used as regions of interest (ROIs) for the fMRI functional connectivity analysis. Pairwise BOLD signal correlations were obtained between each pair of these ROIs for each frequency band. Each pairwise correlation was compared between the ASD and TD groups using t-tests. We also constrained these pairwise correlations to known network structures, resulting in a follow-up set of correlation matrices specific to each network we considered. Frequency-specific MEG sources had distinct patterns of fMRI resting

  20. Single donor electronics and quantum functionalities with advanced CMOS technology.

    PubMed

    Jehl, Xavier; Niquet, Yann-Michel; Sanquer, Marc

    2016-03-16

    Recent progresses in quantum dots technology allow fundamental studies of single donors in various semiconductor nanostructures. For the prospect of applications figures of merits such as scalability, tunability, and operation at relatively large temperature are of prime importance. Beyond the case of actual dopant atoms in a host crystal, similar arguments hold for small enough quantum dots which behave as artificial atoms, for instance for single spin control and manipulation. In this context, this experimental review focuses on the silicon-on-insulator devices produced within microelectronics facilities with only very minor modifications to the current industrial CMOS process and tools. This is required for scalability and enabled by shallow trench or mesa isolation. It also paves the way for real integration with conventional circuits, as illustrated by a nanoscale device coupled to a CMOS circuit producing a radio-frequency drive on-chip. At the device level we emphasize the central role of electrostatics in etched silicon nanowire transistors, which allows to understand the characteristics in the full range from zero to room temperature. PMID:26871255

  1. Single phase dynamic CMOS PLA using charge sharing technique

    NASA Technical Reports Server (NTRS)

    Dhong, Y. B.; Tsang, C. P.

    1991-01-01

    A single phase dynamic CMOS NOR-NOR programmable logic array (PLA) using triggered decoders and charge sharing techniques for high speed and low power is presented. By using the triggered decoder technique, the ground switches are eliminated, thereby, making this new design much faster and lower power dissipation than conventional PLA's. By using the charge-sharing technique in a dynamic CMOS NOR structure, a cascading AND gate can be implemented. The proposed PLA's are presented with a delay-time of 15.95 and 18.05 nsec, respectively, which compare with a conventional single phase PLA with 35.5 nsec delay-time. For a typical example of PLA like the Signetics 82S100 with 16 inputs, 48 input minterms (m) and 8 output minterms (n), the 2-SOP PLA using the triggered 2-bit decoder is 2.23 times faster and has 2.1 times less power dissipation than the conventional PLA. These results are simulated using maximum drain current of 600 micro-A, gate length of 2.0 micron, V sub DD of 5 V, the capacitance of an input miniterm of 1600 fF, and the capacitance of an output minterm of 1500 fF.

  2. CMOS-TDI detector technology for reconnaissance application

    NASA Astrophysics Data System (ADS)

    Eckardt, Andreas; Reulke, Ralf; Jung, Melanie; Sengebusch, Karsten

    2014-10-01

    The Institute of Optical Sensor Systems (OS) at the Robotics and Mechatronics Center of the German Aerospace Center (DLR) has more than 30 years of experience with high-resolution imaging technology. This paper shows the institute's scientific results of the leading-edge detector design CMOS in a TDI (Time Delay and Integration) architecture. This project includes the technological design of future high or multi-spectral resolution spaceborne instruments and the possibility of higher integration. DLR OS and the Fraunhofer Institute for Microelectronic Circuits and Systems (IMS) in Duisburg were driving the technology of new detectors and the FPA design for future projects, new manufacturing accuracy and on-chip processing capability in order to keep pace with the ambitious scientific and user requirements. In combination with the engineering research, the current generation of space borne sensor systems is focusing on VIS/NIR high spectral resolution to meet the requirements on earth and planetary observation systems. The combination of large-swath and high-spectral resolution with intelligent synchronization control, fast-readout ADC (analog digital converter) chains and new focal-plane concepts opens the door to new remote-sensing and smart deep-space instruments. The paper gives an overview of the detector development status and verification program at DLR, as well as of new control possibilities for CMOS-TDI detectors in synchronization control mode.

  3. 3-D perpendicular assembly of SWNTs for CMOS interconnects

    NASA Astrophysics Data System (ADS)

    Kim, Tae-Hoon; Yilmaz, Cihan; Somu, Sivasubramanian; Busnaina, Ahmed

    2013-11-01

    Due to their superior electrical properties such as high current density and ballistic transport, carbon nanotubes (CNT) are considered as a potential candidate for future very large scale integration (VLSI) interconnects. However, direct incorporation of CNTs into a complimentary metal oxide semiconductor (CMOS) architecture by the conventional chemical vapor deposition (CVD) growth method is problematic because it requires high temperatures that might damage insulators and doped semiconductors in the underlying CMOS circuits. In this paper, we present a directed assembly method to assemble aligned CNTs into pre-patterned vias perpendicular to the substrate. A dynamic electric field with a static offset is applied to provide the force needed for directing the SWNT assembly. It is also shown that by adjusting assembly parameters the density of the assembled CNTs can be significantly enhanced. This highly scalable directed assembly method is conducted at room temperature and pressure and is accomplished in a few minutes. I-V characterization of the assembled CNTs was conducted using a Zyvex nanomanipulator in a scanning electron microscope (SEM) and the measured value of the resistance was 270 kΩs.

  4. Single donor electronics and quantum functionalities with advanced CMOS technology

    NASA Astrophysics Data System (ADS)

    Jehl, Xavier; Niquet, Yann-Michel; Sanquer, Marc

    2016-03-01

    Recent progresses in quantum dots technology allow fundamental studies of single donors in various semiconductor nanostructures. For the prospect of applications figures of merits such as scalability, tunability, and operation at relatively large temperature are of prime importance. Beyond the case of actual dopant atoms in a host crystal, similar arguments hold for small enough quantum dots which behave as artificial atoms, for instance for single spin control and manipulation. In this context, this experimental review focuses on the silicon-on-insulator devices produced within microelectronics facilities with only very minor modifications to the current industrial CMOS process and tools. This is required for scalability and enabled by shallow trench or mesa isolation. It also paves the way for real integration with conventional circuits, as illustrated by a nanoscale device coupled to a CMOS circuit producing a radio-frequency drive on-chip. At the device level we emphasize the central role of electrostatics in etched silicon nanowire transistors, which allows to understand the characteristics in the full range from zero to room temperature.

  5. CMOS low data rate imaging method based on compressed sensing

    NASA Astrophysics Data System (ADS)

    Xiao, Long-long; Liu, Kun; Han, Da-peng

    2012-07-01

    Complementary metal-oxide semiconductor (CMOS) technology enables the integration of image sensing and image compression processing, making improvements on overall system performance possible. We present a CMOS low data rate imaging approach by implementing compressed sensing (CS). On the basis of the CS framework, the image sensor projects the image onto a separable two-dimensional (2D) basis set and measures the corresponding coefficients obtained. First, the electrical current output from the pixels in a column are combined, with weights specified by voltage, in accordance with Kirchhoff's law. The second computation is performed in an analog vector-matrix multiplier (VMM). Each element of the VMM considers the total value of each column as the input and multiplies it by a unique coefficient. Both weights and coefficients are reprogrammable through analog floating-gate (FG) transistors. The image can be recovered from a percentage of these measurements using an optimization algorithm. The percentage, which can be altered flexibly by programming on the hardware circuit, determines the image compression ratio. These novel designs facilitate image compression during the image-capture phase before storage, and have the potential to reduce power consumption. Experimental results demonstrate that the proposed method achieves a large image compression ratio and ensures imaging quality.

  6. Scanning probe lithography approach for beyond CMOS devices

    NASA Astrophysics Data System (ADS)

    Durrani, Zahid; Jones, Mervyn; Kaestner, Marcus; Hofer, Manuel; Guliyev, Elshad; Ahmad, Ahmad; Ivanov, Tzvetan; Zoellner, Jens-Peter; Rangelow, Ivo W.

    2013-03-01

    As present CMOS devices approach technological and physical limits at the sub-10 nm scale, a `beyond CMOS' information-processing technology is necessary for timescales beyond the semiconductor technology roadmap. This requires new approaches to logic and memory devices, and to associated lithographic processes. At the sub-5 nm scale, a technology platform based on a combination of high-resolution scanning probe lithography (SPL) and nano-imprint lithography (NIL) is regarded as a promising candidate for both resolution and high throughput production. The practical application of quantum-effect devices, such as room temperature single-electron and quantum-dot devices, then becomes feasible. This paper considers lithographic and device approaches to such a `single nanometer manufacturing' technology. We consider the application of scanning probes, capable of imaging, probing of material properties and lithography at the single nanometer scale. Modified scanning probes are used to pattern molecular glass based resist materials, where the small particle size (<1 nm) and mono-disperse nature leads to more uniform and smaller lithographic pixel size. We also review the current status of single-electron and quantum dot devices capable of room-temperature operation, and discuss the requirements for these devices with regards to practical application.

  7. A CMOS active pixel sensor for retinal stimulation

    NASA Astrophysics Data System (ADS)

    Prydderch, Mark L.; French, Marcus J.; Mathieson, Keith; Adams, Christopher; Gunning, Deborah; Laudanski, Jonathan; Morrison, James D.; Moodie, Alan R.; Sinclair, James

    2006-02-01

    Degenerative photoreceptor diseases, such as age-related macular degeneration and retinitis pigmentosa, are the most common causes of blindness in the western world. A potential cure is to use a microelectronic retinal prosthesis to provide electrical stimulation to the remaining healthy retinal cells. We describe a prototype CMOS Active Pixel Sensor capable of detecting a visual scene and translating it into a train of electrical pulses for stimulation of the retina. The sensor consists of a 10 x 10 array of 100 micron square pixels fabricated on a 0.35 micron CMOS process. Light incident upon each pixel is converted into output current pulse trains with a frequency related to the light intensity. These outputs are connected to a biocompatible microelectrode array for contact to the retinal cells. The flexible design allows experimentation with signal amplitudes and frequencies in order to determine the most appropriate stimulus for the retina. Neural processing in the retina can be studied by using the sensor in conjunction with a Field Programmable Gate Array (FPGA) programmed to behave as a neural network. The sensor has been integrated into a test system designed for studying retinal response. We present the most recent results obtained from this sensor.

  8. Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization

    SciTech Connect

    Black, Dolores A.; Robinson, William H.; Limbrick, Daniel B.; Black, Jeffrey D.; Wilcox, Ian Z.

    2015-08-07

    Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. An accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. A small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. Furthermore, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.

  9. Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization

    DOE PAGESBeta

    Black, Dolores A.; Robinson, William H.; Limbrick, Daniel B.; Black, Jeffrey D.; Wilcox, Ian Z.

    2015-08-07

    Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. An accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional modelmore » based on one double-exponential source can be incomplete. A small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. Furthermore, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.« less

  10. Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization

    SciTech Connect

    Black, Dolores Archuleta; Robinson, William H.; Wilcox, Ian Zachary; Limbrick, Daniel B.; Black, Jeffrey D.

    2015-08-07

    Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. Likewise, an accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. Furthermore, a small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. As a result, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.

  11. Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization

    DOE PAGESBeta

    Black, Dolores Archuleta; Robinson, William H.; Wilcox, Ian Zachary; Limbrick, Daniel B.; Black, Jeffrey D.

    2015-08-07

    Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. Likewise, an accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventionalmore » model based on one double-exponential source can be incomplete. Furthermore, a small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. As a result, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.« less

  12. High-latitude field-aligned current sources and induced electric fields

    NASA Technical Reports Server (NTRS)

    Barbosa, D. D.

    1979-01-01

    Using a simple, planar model of the high latitude ionosphere with an enhanced conductivity auroral ring, the electric potential is computed for a pair of field-aligned current sheets inferred from observations. The relationship of various characteristics of the electric potential pattern to features of the field-aligned current distribution are elucidated in the context of a generalized field-aligned current Fourier analysis. On the basis of the analysis and observations to date, it is concluded that boundary layer dynamo action is the prevalent mechanism in the solar wind/magnetosphere/ionosphere interaction.

  13. Sources and transport of the Deep Western Boundary Current East of the Kerguelen Plateau

    NASA Astrophysics Data System (ADS)

    Donohue, Kathleen A.; Hufford, Gwyneth E.; McCartney, Michael S.

    East of the Kerguelen Plateau, a deep western boundary current in the Australian-Antarctic Basin brings cold dense waters north from the margins of Antarctica. Geostrophic velocities referenced to acoustic Doppler current profiler data, both shipboard and lowered, suggest the flow is unidirectional throughout the water column with estimated northwestward transport below potential temperature 1°C of 28 ± 7 × 106 m³s-1 and 49 ± 9 × 106 m³s-1 respectively. Hydrographie and acoustic Doppler current profiler data show that the deep boundary current is supplied by northward flow emerging from the confluence of westward flow along the Antarctic continental slope and eastward flow of Weddell Basin waters through the Princess Elizabeth Trough to the south of the Kerguelen Plateau.

  14. Microbial Source Tracking: Current and Future Molecular Tools in Microbial Water Quality Forensics

    EPA Science Inventory

    Current regulations in the United States stipulate that the microbial quality of waters used for consumption and recreational activities should be determined regularly by measuring microbial indicators of fecal pollution. Hence, the microbial risk associated with these waters is...

  15. A new analytical drain current model of cylindrical gate silicon tunnel FET with source δ-doping

    NASA Astrophysics Data System (ADS)

    Dash, Sidhartha; Jena, Biswajit; Mishra, Guru Prasad

    2016-09-01

    A new δ-doped cylindrical gate silicon tunnel FET (DCG-TFET) analytical model is developed and investigated extensively, with the aim of addressing the challenges of the conventional CG-TFET. The improvement in tunneling probability of charge carriers has been achieved by inserting a δ-doping sheet in the source region which leads to high drain current as compared to CG-TFET. The effect of distance between the δ-doping sheet and source/channel interface on the current performance, sub-threshold swing (SS) and threshold voltage (Vth) has been examined. The instantaneous position of δ-doping region from the tunneling junction is optimized based on the trade-off between current ratio and SS. The present model exhibit maximum switching current ratio (ION/IOFF ≅1012) for an optimum distance of 2 nm without degrading SS (SS∼55 mV/decade) and Vth performance. The electrostatic behavior of the present model is obtained using the solution of Poisson's equation in the cylindrical coordinate system. However the impact of scaling of the gate oxide thickness and cylindrical pillar diameter on drain current performance has been discussed. In future, DCG-TFET can be one of the potential successors for ultra-low-power applications because of its improved drain current and switching ratio.

  16. Graphene/Si CMOS Hybrid Hall Integrated Circuits

    PubMed Central

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-01-01

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process. PMID:24998222

  17. MULTIPLE METALS STACK EMISSION MEASUREMENT METHODOLOGY FOR STATIONARY SOURCES, CURRENT STATUS

    EPA Science Inventory

    Stack emissions of metals from stationary sources are of present interest to the United States Environmental Protection Agency (USEPA), to state and local governments, to industries, and to the public. hen regulations require limitation of metals stack emissions, it follows logic...

  18. MULTIPLE METALS STACK EMISSION MEASUREMENT METHODOLOGY FOR STATIONARY SOURCES - CURRENT STATUS

    EPA Science Inventory

    Stack emissions of metals from stationary sources are of present interest to the United States Environmental Protection Agency (USEPA), to state and local governments, to industries, and to the public. hen regulations require limitation of metals stack emissions, it follows logic...

  19. Programmed Instruction in Business and Industry, Current Information Sources, No. 28.

    ERIC Educational Resources Information Center

    Syracuse Univ., NY. ERIC Clearinghouse on Adult Education.

    Covering the period since 1960, this annotated bibliography contains 97 items (most with abstracts) relevant to programed instruction in business and industry. The following appear: (1) 12 bibliographies, directories, and information sources, both foreign and domestic; (2) general considerations of programed instruction as a training technique (26…

  20. First plasma of megawatt high current ion source for neutral beam injector of the experimental advanced superconducting tokamak on the test bed

    SciTech Connect

    Hu Chundong; Xie Yahong; Liu Sheng; Xie Yuanlai; Jiang Caichao; Song Shihua; Li Jun; Liu Zhimin

    2011-02-15

    High current ion source is the key part of the neutral beam injector. In order to develop the project of 4 MW neutral beam injection for the experimental advanced superconducting tokamak (EAST) on schedule, the megawatt high current ion source is prestudied in the Institute of Plasma Physics in China. In this paper, the megawatt high current ion source test bed and the first plasma are presented. The high current discharge of 900 A at 2 s and long pulse discharge of 5 s at 680 A are achieved. The arc discharge characteristic of high current ion source is analyzed primarily.

  1. Gate-leakage-tolerant circuits in deep sub-100-nm CMOS technologies

    NASA Astrophysics Data System (ADS)

    Kang, Sung-Mo; Yang, Ge; Wang, Zhongda

    2004-03-01

    The leakage power consumption in deep sub-100nm CMOS systems is projected to become a significant part of the total power dissipation. Although the dual Vt CMOS process helps reduce the subthreshold leakage current, the gate leakage problem poses a significant design challenge. We introduce gate leakage tolerant circuits. We describe two new circuit techniques to suppress gate leakage currents in dual Vt Domino circuits. In standby mode, proposed circuits generate low inputs and low outputs for all Domino stages to suppress gate leakage currents in the NMOS logic tree. Simulation results using 45nm BSIM4 SPICE models for 32-bit adders show that adders using the two proposed circuits can reduce the standby gate leakage by 66% and 90%, respectively. Proposed adders have 7% active power overhead to achieve the same speed as single Vt domino adder and the area penalty is minimal with careful layout.

  2. A CMOS detection chip for amperometric sensors with chopper stabilized incremental ΔΣ ADC

    NASA Astrophysics Data System (ADS)

    Min, Chen; Yuntao, Liu; Jingbo, Xiao; Jie, Chen

    2016-06-01

    This paper presents a low noise complimentary metal–oxide-semiconductor (CMOS) detection chip for amperometric electrochemical sensors. In order to effectively remove the input offset of the cascaded integrators and the low frequency noise in the modulator, a novel offset cancellation chopping scheme was proposed in the Incremental ΔΣ analog to digital converter (IADC). A novel low power potentiostat was employed in this chip to provide the biasing voltage for the sensor while mirroring the sensor current out for detection. The chip communicates with FPGA through standard built in I2C interface and SPI bus. Fabricated in 0.18-μm CMOS process, this chip detects current signal with high accuracy and high linearity. A prototype microsystem was produced to verify the detection chip performance with current input as well as micro-sensors. Project supported by the State Key Development Program for Basic Research of China (No. 2015CB352100).

  3. High resolution X-ray spectroscopy of astrophysical sources: current and future

    NASA Astrophysics Data System (ADS)

    Paerels, Frits

    High resolution spectroscopy of cosmic X-ray sources has become a well-established technique over the last decade, with the wide variety of investigations performed with the diffraction grating spectrometers on Chandra and XMM-Newton. I will review some of the common themes that have emerged from these studies, which comprises observations of "sources" as varied as the intergalactic medium and the atmospheres of hot neutron stars. With the microcalorimeter spectrometer array on Astro-H, we will be making two more big steps: true imaging spectroscopy, and extension of the high resolution to the Fe K band. I will outline some of the issues we will encounter, against the background of possible discoveries we may make.

  4. Microbial pigments as natural color sources: current trends and future perspectives.

    PubMed

    Tuli, Hardeep S; Chaudhary, Prachi; Beniwal, Vikas; Sharma, Anil K

    2015-08-01

    Synthetic colors have been widely used in various industries including food, textile, cosmetic and pharmaceuticals. However toxicity problems caused by synthetic pigments have triggered intense research in natural colors and dyes. Among the natural Sources, pigment producing microorganisms hold a promising potential to meet present day challenges. Furthermore natural colors not only improve the marketability of the product but also add extra features like anti oxidant, anti cancer properties etc. In this review, we present various sources of microbial pigments and to explore their biological and clinical properties like antimicrobial, antioxidant, anticancer and anti inflammatory. The study also emphasizes upon key parameters to improve the bioactivity and production of microbial pigments for their commercial use in pharmacological and medical fields. PMID:26243889

  5. Macromodel for exact computation of propagation delay time in GaAs and CMOS technologies

    NASA Astrophysics Data System (ADS)

    Garcia, Jose C.; Montiel-Nelson, Juan A.; Sosa, Javier; Navarro, Hector; Sarmiento, Roberto

    2003-04-01

    A new transient macromodel for the cells used in DCFL GaAs and CMOS digital design is introduced in this paper. The numerical solution determines accurate propagation delay times. The macromodel is based on the differential equation for the output voltage in terms of currents and capacitances. An straightforward treatment of the differential equation for an inverter in DCFL GaAs and CMOS has been obtained. It could be resolved numerically by a 4th order Runge Kutta method. Good agreement is obtained between the HSPICE simulation and the computation of the propagation delays for DCFL GaAs and CMOS basic gates: INV, NOR, OR and NAND. There is no error between HSPICE and our computation of propagation delay time for the high to low (tphl) and low to high (tplh) transitions. The propagation delay times for two types of transition were measured and compared with HSPICE. The results demonstrate that our approach matches with HSPICE with no error. The numerical method was programmed in C language. In addition, computation time analysis is provided and numerical solution is several orders of magnitude faster than HSPICE. Work is in progress to obtain the macromodel of a standard cell library for digital application both for a 0.6 microns E/D GaAs process (H-GaAsIV) from Vitesse Semiconductor and for a 0.18 microns logic/mixed-signal CMOS process (1P6M) from TSMC Corp.

  6. Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 μm technology

    NASA Astrophysics Data System (ADS)

    Pellion, D.; Jradi, K.; Brochard, N.; Prêle, D.; Ginhac, D.

    2015-07-01

    Some decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems. So, the past decade has seen a dramatic increase in interest in new integrated single-photon detectors called Single-Photon Avalanche Diodes (SPAD) or Geiger-mode APD. SPAD are working in avalanche mode above the breakdown level. When an incident photon is captured, a very fast avalanche is triggered, generating an easily detectable current pulse. This paper discusses SPAD detectors fabricated in a standard CMOS technology featuring both single-photon sensitivity, and excellent timing resolution, while guaranteeing a high integration. In this work, we investigate the design of SPAD detectors using the AMS 0.35 μm CMOS Opto technology. Indeed, such standard CMOS technology allows producing large surface (few mm2) of single photon sensitive detectors. Moreover, SPAD in CMOS technologies could be associated to electronic readout such as active quenching, digital to analog converter, memories and any specific processing required to build efficient calorimeters1

  7. Ultralow-Loss CMOS Copper Plasmonic Waveguides.

    PubMed

    Fedyanin, Dmitry Yu; Yakubovsky, Dmitry I; Kirtaev, Roman V; Volkov, Valentyn S

    2016-01-13

    Surface plasmon polaritons can give a unique opportunity to manipulate light at a scale well below the diffraction limit reducing the size of optical components down to that of nanoelectronic circuits. At the same time, plasmonics is mostly based on noble metals, which are not compatible with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which can outperform gold plasmonic waveguides simultaneously providing long (>40 μm) propagation length and deep subwavelength (∼λ(2)/50, where λ is the free-space wavelength) mode confinement in the telecommunication spectral range. These results create the backbone for the development of a CMOS plasmonic platform and its integration in future electronic chips. PMID:26654281

  8. Spectrum acquisition of detonation based on CMOS

    NASA Astrophysics Data System (ADS)

    Li, Yan; Bai, Yonglin; Wang, Bo; Liu, Baiyu; Xue, Yingdong; Zhang, Wei; Gou, Yongsheng; Bai, Xiaohong; Qin, Junjun; Xian, Ouyang

    2010-10-01

    The detection of high-speed dynamic spectrum is the main method to acquire transient information. In order to obtain the large amount spectral data in real-time during the process of detonation, a CMOS-based system with high-speed spectrum data acquisition is designed. The hardware platform of the system is based on FPGA, and the unique characteristic of CMOS image sensors in the rolling shutter model is used simultaneously. Using FPGA as the master control chip of the system, not only provides the time sequence for CIS, but also controls the storage and transmission of the spectral data. In the experiment of spectral data acquisition, the acquired information is transmitted to the host computer through the CameraLink bus. The dynamic spectral curve is obtained after the subsequent processing. The experimental results demonstrate that this system is feasible in the acquisition and storage of high-speed dynamic spectrum information during the process of detonation.

  9. IR CMOS: infrared enhanced silicon imaging

    NASA Astrophysics Data System (ADS)

    Pralle, M. U.; Carey, J. E.; Haddad, Homayoon; Vineis, C.; Sickler, J.; Li, X.; Jiang, J.; Sahebi, F.; Palsule, C.; McKee, J.

    2013-06-01

    SiOnyx has developed visible and infrared CMOS image sensors leveraging a proprietary ultrafast laser semiconductor process technology. This technology demonstrates 10 fold improvements in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal plane with state of the art noise performance of 2 electrons/pixel. By capturing light in the visible regime as well as infrared light from the night glow, this sensor technology provides imaging in daytime through twilight and into nighttime conditions. The measured 10x quantum efficiency at the critical 1064 nm laser node enables see spot imaging capabilities in a variety of ambient conditions. The spectral sensitivity is from 400 to 1200 nm.

  10. Cmos spdt switch for wlan applications

    NASA Astrophysics Data System (ADS)

    Bhuiyan, M. A. S.; Reaz, M. B. I.; Rahman, L. F.; Minhad, K. N.

    2015-04-01

    WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal.

  11. ADULT EDUCATION IN ASIA, AUSTRALIA, AND NEW ZEALAND. CURRENT INFORMATION SOURCES, NUMBER 13.

    ERIC Educational Resources Information Center

    Syracuse Univ., NY. ERIC Clearinghouse on Adult Education.

    THE 45 ABSTRACTS AND ANNOTATIONS IN THIS BIBLIOGRAPHY COVERING THE PERIOD 1963-67 HAVE BEEN ARRANGED BY GEOGRAPHIC LOCATION TO GIVE THE USER CURRENT AWARENESS OF PUBLICATIONS AVAILABLE ON A GIVEN SEGMENT OF THE WORLD, AND TO FACILITATE THE INTERNATIONAL EXCHANGE OF INFORMATION ON ADULT EDUCATION. ITEMS ON INDIA, AUSTRALIA, NEW ZEALAND, NEPAL, AND…

  12. DE 1 observations of theta aurora plasma source regions and Birkeland current charge carriers

    SciTech Connect

    Menietti, J.D.; Burch, J.L. )

    1987-07-01

    The authors have performed detailed analyses of the DE 1 high-altitude plasma instrument (HAPI) electron and ion data for four passes during which theta auroras were observed. The data indicate that the theta auroras occur on what appear to be closed field lines with particle signatures and plasma parameters that are quite similar to those of the magnetospheric boundary plasma sheet. The field-aligned currents computed from particle fluxes in the energy range 18 eV < E < 13 keV above the theta auroras are observed to be generally downward on the dawnside of the arcs with a narrower region of larger (higher density) upward currents on the duskside of the arcs. These currents are carried predominantly by field-aligned beams of accelerated cold electrons. Of particular interest in regions of upward field-aligned current are downward electron beams at energies less than the inferred potential drop above the spacecraft. These beams may be due to atmospheric secondaries or to ionospheric electrons that have convected into a region of field-aligned electric field.

  13. CMOS Camera Array With Onboard Memory

    NASA Technical Reports Server (NTRS)

    Gat, Nahum

    2009-01-01

    A compact CMOS (complementary metal oxide semiconductor) camera system has been developed with high resolution (1.3 Megapixels), a USB (universal serial bus) 2.0 interface, and an onboard memory. Exposure times, and other operating parameters, are sent from a control PC via the USB port. Data from the camera can be received via the USB port and the interface allows for simple control and data capture through a laptop computer.

  14. CMOS-array design-automation techniques

    NASA Technical Reports Server (NTRS)

    Feller, A.; Lombardt, T.

    1979-01-01

    Thirty four page report discusses design of 4,096-bit complementary metal oxide semiconductor (CMOS) read-only memory (ROM). CMOSROM is either mask or laser programable. Report is divided into six sections; section one describes background of ROM chips; section two presents design goals for chip; section three discusses chip implementation and chip statistics; conclusions and recommendations are given in sections four thru six.

  15. Advanced CMOS Radiation Effects Testing Analysis

    NASA Technical Reports Server (NTRS)

    Pellish, Jonathan Allen; Marshall, Paul W.; Rodbell, Kenneth P.; Gordon, Michael S.; LaBel, Kenneth A.; Schwank, James R.; Dodds, Nathaniel A.; Castaneda, Carlos M.; Berg, Melanie D.; Kim, Hak S.; Phan, Anthony M.; Seidleck, Christina M.

    2014-01-01

    Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.

  16. Advanced CMOS Radiation Effects Testing and Analysis

    NASA Technical Reports Server (NTRS)

    Pellish, J. A.; Marshall, P. W.; Rodbell, K. P.; Gordon, M. S.; LaBel, K. A.; Schwank, J. R.; Dodds, N. A.; Castaneda, C. M.; Berg, M. D.; Kim, H. S.; Phan, A. M.; Seidleck, C. M.

    2014-01-01

    Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.

  17. Radiation effects on scientific CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Yuanfu, Zhao; Liyan, Liu; Xiaohui, Liu; Xiaofeng, Jin; Xiang, Li

    2015-11-01

    A systemic solution for radiation hardened design is presented. Besides, a series of experiments have been carried out on the samples, and then the photoelectric response characteristic and spectral characteristic before and after the experiments have been comprehensively analyzed. The performance of the CMOS image sensor with the radiation hardened design technique realized total-dose resilience up to 300 krad(Si) and resilience to single-event latch up for LET up to 110 MeV·cm2/mg.

  18. Tests on the extracted current density of negative hydrogen ions from a single element of the matrix source

    SciTech Connect

    Lishev, St.; Yordanov, D. Shivarova, A.

    2015-04-08

    Concepts for the extraction of volume-produced negative hydrogen ions from a rf matrix source (a matrix of small-radius discharges with a planar-coil inductive driving) are presented and discussed based on experimental results for the current densities of the extracted ions and the co-extracted electrons. The experiment has been carried out in a single discharge of the source: a rf discharge with a radius of 2.25 cm inductively driven by a 3.5-turn planar coil. The length of the discharge tube, the area of the reference electrode inserted in the discharge volume, the discharge modes, the magnetic filter and its position along the discharge length, the position of the permanent magnets for the separation of the co-extracted electrons from the extracted ions in the extraction device and the bias applied to its first electrode are considered as factors influencing the extracted currents of negative ions.

  19. CMOS-controlled rapidly tunable photodetectors

    NASA Astrophysics Data System (ADS)

    Chen, Ray

    With rapidly increasing data bandwidth demands, wavelength-division-multiplexing (WDM) optical access networks seem unavoidable in the near future. To operate WDM optical networks in an efficient scheme, wavelength reconfigurability and scalability of the network are crucial. Unfortunately, most of the existing wavelength tunable technologies are neither rapidly tunable nor spectrally programmable. This dissertation presents a tunable photodetector that is designed for dynamic-wavelength allocation WDM network environments. The wavelength tuning mechanism is completely different from existing technologies. The spectrum of this detector is programmable through low-voltage digital patterns. Since the wavelength selection is achieved by electronic means, the device wavelength reconfiguration time is as fast as the electronic switching time. In this dissertation work, we have demonstrated a tunable detector that is hybridly integrated with its customized CMOS driver and receiver with nanosecond wavelength reconfiguration time. In addition to its nanosecond wavelength reconfiguration time, the spectrum of this detector is digitally programmable, which means that it can adapt to system changes without re-fabrication. We have theoretically developed and experimentally demonstrated two device operating algorithms based on the same orthogonal device-optics basis. Both the rapid wavelength tuning time and the scalability make this novel device very viable for new reconfigurable WDM networks. By taking advantage of CMOS circuit design, this detector concept can be further extended for simultaneous multiple wavelength detection. We have developed one possible chip architecture and have designed a CMOS tunable optical demux for simultaneous controllable two-wavelength detection.

  20. Efficient design of CMOS TSC checkers

    NASA Technical Reports Server (NTRS)

    Biddappa, Anita; Shamanna, Manjunath K.; Maki, Gary; Whitaker, Sterling

    1990-01-01

    This paper considers the design of an efficient, robustly testable, CMOS Totally Self-Checking (TSC) Checker for k-out-of-2k codes. Most existing implementations use primitive gates and assume the single stuck-at fault model. The self-testing property has been found to fail for CMOS TSC checkers under the stuck-open fault model due to timing skews and arbitrary delays in the circuit. A new four level design using CMOS primitive gates (NAND, NOR, INVERTERS) is presented. This design retains its properties under the stuck-open fault model. Additionally, this method offers an impressive reduction (greater than 70 percent) in gate count, gate inputs, and test set size when compared to the existing method. This implementation is easily realizable and is based on Anderson's technique. A thorough comparative study has been made on the proposed implementation and Kundu's implementation and the results indicate that the proposed one is better than Kundu's in all respects for k-out-of-2k codes.

  1. Quantitative optical metrology with CMOS cameras

    NASA Astrophysics Data System (ADS)

    Furlong, Cosme; Kolenovic, Ervin; Ferguson, Curtis F.

    2004-08-01

    Recent advances in laser technology, optical sensing, and computer processing of data, have lead to the development of advanced quantitative optical metrology techniques for high accuracy measurements of absolute shapes and deformations of objects. These techniques provide noninvasive, remote, and full field of view information about the objects of interest. The information obtained relates to changes in shape and/or size of the objects, characterizes anomalies, and provides tools to enhance fabrication processes. Factors that influence selection and applicability of an optical technique include the required sensitivity, accuracy, and precision that are necessary for a particular application. In this paper, sensitivity, accuracy, and precision characteristics in quantitative optical metrology techniques, and specifically in optoelectronic holography (OEH) based on CMOS cameras, are discussed. Sensitivity, accuracy, and precision are investigated with the aid of National Institute of Standards and Technology (NIST) traceable gauges, demonstrating the applicability of CMOS cameras in quantitative optical metrology techniques. It is shown that the advanced nature of CMOS technology can be applied to challenging engineering applications, including the study of rapidly evolving phenomena occurring in MEMS and micromechatronics.

  2. Effect of high energy electrons on H⁻ production and destruction in a high current DC negative ion source for cyclotron.

    PubMed

    Onai, M; Etoh, H; Aoki, Y; Shibata, T; Mattei, S; Fujita, S; Hatayama, A; Lettry, J

    2016-02-01

    Recently, a filament driven multi-cusp negative ion source has been developed for proton cyclotrons in medical applications. In this study, numerical modeling of the filament arc-discharge source plasma has been done with kinetic modeling of electrons in the ion source plasmas by the multi-cusp arc-discharge code and zero dimensional rate equations for hydrogen molecules and negative ions. In this paper, main focus is placed on the effects of the arc-discharge power on the electron energy distribution function and the resultant H(-) production. The modelling results reasonably explains the dependence of the H(-) extraction current on the arc-discharge power in the experiments. PMID:26932009

  3. A Standard CMOS Humidity Sensor without Post-Processing

    PubMed Central

    Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

    2011-01-01

    A 2 μW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023–10 humidity-sensitive layer, and a CMOS capacitance to voltage converter. PMID:22163949

  4. Producing a Radioactive Source in a Deuterated Palladium Electrode Under Direct-Current Glow Discharge

    SciTech Connect

    Yamada, Hiroshi; Uchiyama, Kazuyoshi; Kawata, Nobuhiko; Kurisawa, Yoshiyuki; Nakamura, Mitsuru

    2001-03-15

    Anomalous gamma emission was rarely observed during direct-current glow discharge in {approx}3 Torrs of deuterium gas using a deuterated palladium foil cathode. Autoradiography after the discharge experiment showed that isotopes with low- and high-energy radiation components were produced before or during the discharge. The palladium foil after the anomalous gamma-ray emission was analyzed by secondary ion mass spectroscopy, which revealed a considerable increase in the content of iron and copper on the surface.

  5. Generator localization by current source density (CSD): implications of volume conduction and field closure at intracranial and scalp resolutions.

    PubMed

    Tenke, Craig E; Kayser, Jürgen

    2012-12-01

    The topographic ambiguity and reference-dependency that has plagued EEG/ERP research throughout its history are largely attributable to volume conduction, which may be concisely described by a vector form of Ohm's Law. This biophysical relationship is common to popular algorithms that infer neuronal generators via inverse solutions. It may be further simplified as Poisson's source equation, which identifies underlying current generators from estimates of the second spatial derivative of the field potential (Laplacian transformation). Intracranial current source density (CSD) studies have dissected the "cortical dipole" into intracortical sources and sinks, corresponding to physiologically-meaningful patterns of neuronal activity at a sublaminar resolution, much of which is locally cancelled (i.e., closed field). By virtue of the macroscopic scale of the scalp-recorded EEG, a surface Laplacian reflects the radial projections of these underlying currents, representing a unique, unambiguous measure of neuronal activity at scalp. Although the surface Laplacian requires minimal assumptions compared to complex, model-sensitive inverses, the resulting waveform topographies faithfully summarize and simplify essential constraints that must be placed on putative generators of a scalp potential topography, even if they arise from deep or partially-closed fields. CSD methods thereby provide a global empirical and biophysical context for generator localization, spanning scales from intracortical to scalp recordings. PMID:22796039

  6. Coherence properties of the electric field generated by an incoherent source of currents distributed on the surface of a sphere.

    PubMed

    Zurita-Sánchez, Jorge R

    2016-01-01

    We derive analytical expressions of the cross-spectral density of the electric field arising from an incoherent source whose current density is located on the surface of a sphere. Our approach is based on the series expansion in terms of vector spherical harmonics of the electric field generated by the aforementioned current distribution. We analyze in detail the spectrum, the degree of coherence, and the degree of polarization of the electric field for all regions in space (from the near field to the far field). The relationship of the high-order harmonics to the coherence properties is discussed. The spectrum turns out to be isotropic and it is different from that of the source. We found that the degree of coherence and degree of polarization are strongly influenced by the size of the source. We show the appearance of special features: a zone with a high degree of coherence in the near field for a subwavelength source, the radial degree of coherence is nearly constant in an extended region where two radial points belong to the far field, and a particular radial distance for which the degree of polarization vanishes (3D unpolarized light). PMID:26831593

  7. Interferometric comparison of the performance of a CMOS and sCMOS detector

    NASA Astrophysics Data System (ADS)

    Flores-Moreno, J. M.; De la Torre I., Manuel H.; Hernández-Montes, M. S.; Pérez-López, Carlos; Mendoza S., Fernando

    2015-08-01

    We present an analysis of the imaging performance of two state-of-the-art sensors widely used in the nondestructive- testing area (NDT). The analysis is based on the quantification of the signal-to-noise (SNR) ratio from an optical phase image. The calculation of the SNR is based on the relation of the median (average) and standard deviation measurements over specific areas of interest in the phase images of both sensors. This retrieved phase is coming from the vibrational behavior of a large object by means of an out-of-plane holographic interferometer. The SNR is used as a figure-of-merit to evaluate and compare the performance of the CMOS and scientific CMOS (sCMOS) camera as part of the experimental set-up. One of the cameras has a high speed CMOS sensor while the other has a high resolution sCMOS sensor. The object under study is a metallically framed table with a Formica cover with an observable area of 1.1 m2. The vibration induced to the sample is performed by a linear step motor with an attached tip in the motion stage. Each camera is used once at the time to record the deformation keeping the same experimental conditions for each case. These measurements may complement the conventional procedures or technical information commonly used to evaluate a camerás performance such as: quantum efficiency, spatial resolution and others. Results present post processed images from both cameras, but showing a smoother and easy to unwrap optical phase coming from those recorded with the sCMOS camera.

  8. An Approach for Self-Timed Synchronous CMOS Circuit Design

    NASA Technical Reports Server (NTRS)

    Walker, Alvernon; Lala, Parag K.

    2001-01-01

    In this letter we present a timing and control strategy that can be used to realize synchronous systems with a level of performance that approaches that of asynchronous circuits or systems. This approach is based upon a single-phase synchronous circuit/system architecture with a variable period clock. The handshaking signals required for asynchronous self-timed circuits are not needed. Dynamic power supply current monitoring is used to generate the timing information, that is comparable to the completion signal found in self-timed circuits; this timing information is used to modi@ the circuit clock period. This letter is concluded with an example of the proposed approach applied to a static CMOS ripple-carry adder.

  9. Characteristic of e2v CMOS sensors for astronomical applications

    NASA Astrophysics Data System (ADS)

    Wang, Shiang-Yu; Ling, Hung-Hsu; Hu, Yen-Shan; Geary, John C.; Amato, Stephen M.; Pratlong, Jerome; Pike, Andrew; Jordan, Paul; Lehner, Matthew J.

    2014-07-01

    We report the testing result of e2v CIS 107 CMOS sensor for temperature from 300K to 170K. The CIS 107 sensor is a prototype device with 10 different variations of pixel designs. The sensor has 1500 × 2000, 7 μm pixels with 4 outputs. Each variation covers 1500 × 200 pixels. These are 4T pixels with high resistivity epitaxial silicon and back thinned to 11μm. At room temperature, the several variants of pixels show peak QE higher than 90%, readout noise around 5e- and dark current around 50e-/s/pix. The full well is about 15000 e- due to the limitation of the transfer gate capacitor. The CIS 107 device was further characterized at different device temperatures from 170K to 300K. The readout noise decreases and the full well increases as the device is operated at lower temperature.

  10. Rapid Bacterial Detection via an All-Electronic CMOS Biosensor.

    PubMed

    Nikkhoo, Nasim; Cumby, Nichole; Gulak, P Glenn; Maxwell, Karen L

    2016-01-01

    The timely and accurate diagnosis of infectious diseases is one of the greatest challenges currently facing modern medicine. The development of innovative techniques for the rapid and accurate identification of bacterial pathogens in point-of-care facilities using low-cost, portable instruments is essential. We have developed a novel all-electronic biosensor that is able to identify bacteria in less than ten minutes. This technology exploits bacteriocins, protein toxins naturally produced by bacteria, as the selective biological detection element. The bacteriocins are integrated with an array of potassium-selective sensors in Complementary Metal Oxide Semiconductor technology to provide an inexpensive bacterial biosensor. An electronic platform connects the CMOS sensor to a computer for processing and real-time visualization. We have used this technology to successfully identify both Gram-positive and Gram-negative bacteria commonly found in human infections. PMID:27618185

  11. A new visible watermarking technique applied to CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Yu, Pingping; Shang, Yan; Li, Chunming

    2013-10-01

    This paper presents a new visible watermarking solution for CMOS image sensor which can enhance secure features of captured images. Visible watermarks are embedded in the Bayer format image data and can be transferred by the subsequent interpolation process. A piecewise function is setup based on the gray scale resolution characteristics of human eyes. Watermark stretch factor can be adaptively chosen according to the gray value of the current pixel. The advantage of this algorithm is that the watermark has the same visibility in different image brightness region. A number of color images have been used to test the method. In order to check the robustness of watermarked images, we conducted adding noise and filtering experiments, results show that the visibility of watermark is also good after the experiments. The approach allows a digital watermark to be embedded in an image immediately upon its capture, before leaving the imaging chip.

  12. An Autonomous Wireless Sensor Node With Asynchronous ECG Monitoring in 0.18 μ m CMOS.

    PubMed

    Mansano, Andre L; Li, Yongjia; Bagga, Sumit; Serdijn, Wouter A

    2016-06-01

    The design of a 13.56 MHz/402 MHz autonomous wireless sensor node with asynchronous ECG monitoring for near field communication is presented. The sensor node consists of an RF energy harvester (RFEH), a power management unit, an ECG readout, a data encoder and an RF backscattering transmitter. The energy harvester supplies the system with 1.25 V and offers a power conversion efficiency of 19% from a -13 dBm RF source at 13.56 MHz. The power management unit regulates the output voltage of the RFEH to supply the ECG readout with VECG = 0.95 V and the data encoder with VDE = 0.65 V . The ECG readout comprises an analog front-end (low noise amplifier and programmable voltage to current converter) and an asynchronous level crossing ADC with 8 bits resolution. The ADC output is encoded by a pulse generator that drives a backscattering transmitter at 402 MHz. The total power consumption of the sensor node circuitry is 9.7 μ W for a data rate of 90 kb/s and a heart rate of 70 bpm. The chip has been designed in a 0.18 μm CMOS process and shows superior RF input power sensitivity and lower power consumption when compared to previous works. PMID:26812734

  13. Spatially resolved charge-state and current-density distributions at the extraction of an electron cyclotron resonance ion source

    SciTech Connect

    Panitzsch, Lauri; Peleikis, Thies; Stalder, Michael; Wimmer-Schweingruber, Robert F.

    2011-09-15

    In this paper we present our measurements of charge-state and current-density distributions performed in very close vicinity (15 mm) of the extraction of our hexapole geometry electron cyclotron resonance ion source. We achieved a relatively high spatial resolution reducing the aperture of our 3D-movable extraction (puller) electrode to a diameter of only 0.5 mm. Thus, we are able to limit the source of the extracted ion beam to a very small region of the plasma electrode's hole (O = 4 mm) and therefore to a very small region of the neutral plasma sheath. The information about the charge-state distribution and the current density in the plane of the plasma electrode at each particular position is conserved in the ion beam. We determined the total current density distribution at a fixed coaxial distance of only 15 mm to the plasma electrode by remotely moving the small-aperture puller electrode which contained a dedicated Faraday cup (FC) across the aperture of the plasma electrode. In a second measurement we removed the FC and recorded m/q-spectra for the different positions using a sector magnet. From our results we can deduce that different ion charge-states can be grouped into bloated triangles of different sizes and same orientation at the extraction with the current density peaking at centre. This confirms observations from other groups based on simulations and emittance measurements. We present our measurements in detail and discuss possible systematic errors.

  14. Effect of plasma grid bias on extracted currents in the RF driven surface-plasma negative ion source.

    PubMed

    Belchenko, Yu; Ivanov, A; Sanin, A; Sotnikov, O; Shikhovtsev, I

    2016-02-01

    Extraction of negative ions from the large inductively driven surface-plasma negative ion source was studied. The dependencies of the extracted currents vs plasma grid (PG) bias potential were measured for two modifications of radio-frequency driver with and without Faraday screen, for different hydrogen feeds and for different levels of cesium conditioning. The maximal PG current was independent of driver modification and it was lower in the case of inhibited cesium. The maximal extracted negative ion current depends on the potential difference between the near-PG plasma and the PG bias potentials, while the absolute value of plasma potential in the driver and in the PG area is less important for the negative ion production. The last conclusion confirms the main mechanism of negative ion production through the surface conversion of fast atoms. PMID:26932001

  15. Effect of plasma grid bias on extracted currents in the RF driven surface-plasma negative ion source

    NASA Astrophysics Data System (ADS)

    Belchenko, Yu.; Ivanov, A.; Sanin, A.; Sotnikov, O.; Shikhovtsev, I.

    2016-02-01

    Extraction of negative ions from the large inductively driven surface-plasma negative ion source was studied. The dependencies of the extracted currents vs plasma grid (PG) bias potential were measured for two modifications of radio-frequency driver with and without Faraday screen, for different hydrogen feeds and for different levels of cesium conditioning. The maximal PG current was independent of driver modification and it was lower in the case of inhibited cesium. The maximal extracted negative ion current depends on the potential difference between the near-PG plasma and the PG bias potentials, while the absolute value of plasma potential in the driver and in the PG area is less important for the negative ion production. The last conclusion confirms the main mechanism of negative ion production through the surface conversion of fast atoms.

  16. A CMOS Neural Interface for a Multichannel Vestibular Prosthesis.

    PubMed

    Hageman, Kristin N; Kalayjian, Zaven K; Tejada, Francisco; Chiang, Bryce; Rahman, Mehdi A; Fridman, Gene Y; Dai, Chenkai; Pouliquen, Philippe O; Georgiou, Julio; Della Santina, Charles C; Andreou, Andreas G

    2016-04-01

    We present a high-voltage CMOS neural-interface chip for a multichannel vestibular prosthesis (MVP) that measures head motion and modulates vestibular nerve activity to restore vision- and posture-stabilizing reflexes. This application specific integrated circuit neural interface (ASIC-NI) chip was designed to work with a commercially available microcontroller, which controls the ASIC-NI via a fast parallel interface to deliver biphasic stimulation pulses with 9-bit programmable current amplitude via 16 stimulation channels. The chip was fabricated in the ONSemi C5 0.5 micron, high-voltage CMOS process and can accommodate compliance voltages up to 12 V, stimulating vestibular nerve branches using biphasic current pulses up to 1.45±0.06 mA with durations as short as 10 μs/phase. The ASIC-NI includes a dedicated digital-to-analog converter for each channel, enabling it to perform complex multipolar stimulation. The ASIC-NI replaces discrete components that cover nearly half of the 2nd generation MVP (MVP2) printed circuit board, reducing the MVP system size by 48% and power consumption by 17%. Physiological tests of the ASIC-based MVP system (MVP2A) in a rhesus monkey produced reflexive eye movement responses to prosthetic stimulation similar to those observed when using the MVP2. Sinusoidal modulation of stimulus pulse rate from 68-130 pulses per second at frequencies from 0.1 to 5 Hz elicited appropriately-directed slow phase eye velocities ranging in amplitude from 1.9-16.7 °/s for the MVP2 and 2.0-14.2 °/s for the MVP2A. The eye velocities evoked by MVP2 and MVP2A showed no significant difference ( t-test, p=0.34), suggesting that the MVP2A achieves performance at least as good as the larger MVP2. PMID:25974945

  17. High-Q CMOS-integrated photonic crystal microcavity devices

    PubMed Central

    Mehta, Karan K.; Orcutt, Jason S.; Tehar-Zahav, Ofer; Sternberg, Zvi; Bafrali, Reha; Meade, Roy; Ram, Rajeev J.

    2014-01-01

    Integrated optical resonators are necessary or beneficial in realizations of various functions in scaled photonic platforms, including filtering, modulation, and detection in classical communication systems, optical sensing, as well as addressing and control of solid state emitters for quantum technologies. Although photonic crystal (PhC) microresonators can be advantageous to the more commonly used microring devices due to the former's low mode volumes, fabrication of PhC cavities has typically relied on electron-beam lithography, which precludes integration with large-scale and reproducible CMOS fabrication. Here, we demonstrate wavelength-scale polycrystalline silicon (pSi) PhC microresonators with Qs up to 60,000 fabricated within a bulk CMOS process. Quasi-1D resonators in lateral p-i-n structures allow for resonant defect-state photodetection in all-silicon devices, exhibiting voltage-dependent quantum efficiencies in the range of a few 10 s of %, few-GHz bandwidths, and low dark currents, in devices with loaded Qs in the range of 4,300–9,300; one device, for example, exhibited a loaded Q of 4,300, 25% quantum efficiency (corresponding to a responsivity of 0.31 A/W), 3 GHz bandwidth, and 30 nA dark current at a reverse bias of 30 V. This work demonstrates the possibility for practical integration of PhC microresonators with active electro-optic capability into large-scale silicon photonic systems. PMID:24518161

  18. A CMOS Neural Interface for a Multichannel Vestibular Prosthesis

    PubMed Central

    Hageman, Kristin N.; Kalayjian, Zaven K.; Tejada, Francisco; Chiang, Bryce; Rahman, Mehdi A.; Fridman, Gene Y.; Dai, Chenkai; Pouliquen, Philippe O.; Georgiou, Julio; Della Santina, Charles C.; Andreou, Andreas G.

    2015-01-01

    We present a high-voltage CMOS neural-interface chip for a multichannel vestibular prosthesis (MVP) that measures head motion and modulates vestibular nerve activity to restore vision- and posture-stabilizing reflexes. This application specific integrated circuit neural interface (ASIC-NI) chip was designed to work with a commercially available microcontroller, which controls the ASIC-NI via a fast parallel interface to deliver biphasic stimulation pulses with 9-bit programmable current amplitude via 16 stimulation channels. The chip was fabricated in the ONSemi C5 0.5 micron, high-voltage CMOS process and can accommodate compliance voltages up to 12 V, stimulating vestibular nerve branches using biphasic current pulses up to 1.45 ± 0.06 mA with durations as short as 10 µs/phase. The ASIC-NI includes a dedicated digital-to-analog converter for each channel, enabling it to perform complex multipolar stimulation. The ASIC-NI replaces discrete components that cover nearly half of the 2nd generation MVP (MVP2) printed circuit board, reducing the MVP system size by 48% and power consumption by 17%. Physiological tests of the ASIC-based MVP system (MVP2A) in a rhesus monkey produced reflexive eye movement responses to prosthetic stimulation similar to those observed when using the MVP2. Sinusoidal modulation of stimulus pulse rate from 68–130 pulses per second at frequencies from 0.1 to 5 Hz elicited appropriately-directed slow phase eye velocities ranging in amplitude from 1.9–16.7°/s for the MVP2 and 2.0–14.2°/s for the MVP2A. The eye velocities evoked by MVP2 and MVP2A showed no significant difference (t-test, p = 0.034), suggesting that the MVP2A achieves performance at least as good as the larger MVP2. PMID:25974945

  19. CsBr Photocathode at 257nm: A Rugged High Current Density Electron Source

    SciTech Connect

    Liu, Zhi; Maldonado, Juan; Sun, Yun; Pianetta, Piero; Pease, R.F.W.; /SLAC, SSRL

    2007-01-05

    There is a continuing need for high intensity electron sources that will operate in demountable vacuum and can be externally modulated. Materials with wide bandgap, e.g. diamond, are rugged but need photon energies exceeding the bandgap to emit efficiently and this rules out the use of CW lasers. We have found that a photocathode of CsBr is both adequately intense(>150A/cm{sup 2}) and rugged and can be excited with photons of energy of 4.8eV(257nm). This is below the energy gap of CsBr(7.3eV) but such operation can be explained by the presence of intraband states about 4eV below the conduction band minimum.

  20. Current regulatory and licensing status for byproduct sources, facilities and applications

    SciTech Connect

    Tingey, G.L.; Jensen, G.A.; Hazelton, R.F.

    1985-02-01

    Public use of nuclear byproducts, especially radioactive isotopes, will require approval by various regulatory agencies. Use of cesium-137 as an irradiation source for sterilizing medical products will require US Nuclear Regulatory Commission (NRC) approval. Two applications have been filed with NRC, and approval is expected soon. Widespread use of irradiation for food products depends on a favorable ruling by the Food and Drug Administration (FDA). A ruling is pending that would permit irradiation of fruits and vegetables up to 100 krad. NRC also controls the use of isotopes in remote power generators, but little regulatory action has been required in recent years. Recent development of radioluminescent (RL) lighting for runway lights has led to interest by commercial manufacturers. At the present time, a license has been issued to at least one manufacturer for sale of tritium-powered runway lights. 28 refs., 1 fig.

  1. Current regulatory and licensing status for byproduct sources, facilities and applications

    NASA Astrophysics Data System (ADS)

    Tingey, G. L.; Jensen, G. A.; Hazelton, R. F.

    1985-02-01

    Public use of nuclear byproducts, especially radioactive isotopes, will require approval by various regulatory agencies. Use of cesium-137 as an irradiation source for sterilizing medical products will require US Nuclear Regulatory Commission (NRC) approval. Two applications have been filed with NRC, and approval is expected soon. Widespread use of irradiation for food products depends on a favorable ruling by the Food and Drug Administration (FDA). A ruling is pending that would permit irradiation of fruits and vegetables up to 100 krad. NRC also controls the use of isotopes in remote power generators, but little regulatory action has been required in recent years. Recent development of radioluminescent (RL) lighting for runway lights has led to interest by commercial manufacturers. At the present time, a license has been issued to at least one manufacturer for sale of tritium-powered runway lights.

  2. Electroabsorption modulators for CMOS compatible optical interconnects in III-V and group IV materials

    NASA Astrophysics Data System (ADS)

    Roth, Jonathan Edgar

    While electrical systems excel at information processing, photonics is useful in systems for high-bandwidth, low-loss signal transmission. As photonics technology has become increasingly widespread and has been deployed at shorter distance scales than traditional long-haul networks, it has become important to efficiently integrate photonics components with electrical integrated circuits. Optoelectronic modulators used as transmitters are an important class of device for use in optical interconnects. Many optoelectronic modulator designs use waveguides. Coupling light into waveguides requires a difficult alignment step. This dissertation will describe a number of optoelectronic modulators that do not have the tight alignment constraints associated with waveguide-based modulators. The eased alignment constraints may be important for the practical manufacturing and packaging of systems using optical interconnects. Most currently deployed photonics technologies also use substrates other than silicon and materials incompatible with CMOS manufacturing. Recently we discovered a strong quantum-confined Stark effect in Ge/SiGe quantum well structures that can be used to create efficient optoelectronic modulators on silicon substrates. Optoelectronic modulators using this technology can be fabricated with conventional CMOS foundry processes, possibly on the same chips as CMOS circuits. In this dissertation, an optical interconnect operating in the C-band will be presented. We believe this is the first such device employing an optical transmitter flip-chip bonded to silicon CMOS. A number of novel modulators will be presented, which are fabricated on silicon substrates, and employ Ge/SiGe quantum well structures. These modulators include a novel architecture known as the side-entry modulator, which is designed for monolithic integration with electronics. One side-entry modulator achieved over 3 dB of contrast in the telecommunications C-band for a voltage swing of 1V. Such a

  3. Ambient and cryogenic temperature testing of a 32-channel CMOS multiplexer

    NASA Technical Reports Server (NTRS)

    Lee, J. H.

    1983-01-01

    A 32 channel CMOS multiplexer was tested at room temperature and at liquid helium temperature (4.9 K). Voltage gain of the FET input stage, leakage current, electrical crosstalk, and noise as a function of clock frequency were measured. The voltage gain measured at 4.9 K was slightly higher than that measured at 300 K and was independent of clock frequency at both operating temperatures. The off channel leakage current was 0.23 pA/channel at 4.9 K. Electrical crosstalk between adjacent channels (one on, one off) was quite low. The spot noise at 10 Hz, of the CMOS multiplexer operating in the static mode did not vary significantly with operating temperature. In the dynamic mode (3.2 kHz clock) at room temperature, the spot noise at 10 Hz was substantially higher than that measured in the static mode.

  4. Break-before-Make CMOS Inverter for Power-Efficient Delay Implementation

    PubMed Central

    Raič, Dušan

    2014-01-01

    A modified static CMOS inverter with two inputs and two outputs is proposed to reduce short-circuit current in order to increment delay and reduce power overhead where slow operation is required. The circuit is based on bidirectional delay element connected in series with the PMOS and NMOS switching transistors. It provides differences in the dynamic response so that the direct-path current in the next stage is reduced. The switching transistors are never ON at the same time. Characteristics of various delay element implementations are presented and verified by circuit simulations. Global optimization procedure is used to obtain the most power-efficient transistor sizing. The performance of the modified CMOS inverter chain is compared to standard implementation for various delays. The energy (charge) per delay is reduced up to 40%. The use of the proposed delay element is demonstrated by implementing a low-power delay line and a leading-edge detector cell. PMID:25538951

  5. The current source of human Alu retroposons is a conserved gene shared with Old World monkey

    SciTech Connect

    Britten, R.J.; Stout, D.B.; Davidson, E.H. )

    1989-05-01

    A significant fraction of human Alu repeated sequences are members of the precise, recently inserted class. A cloned member of this class has been used as a probe for interspecies hybridization and thermal stability determination. The probe was reassociated with human, mandrill, and spider monkey DNA under conditions such that only almost perfectly matching duplexes could form. Equally precise hybrids were formed with human and mandrill DNA (Old World monkey) but not with spider monkey DNA (New World). These measurements as well as reassociation kinetics show the presence in mandrill DNA of many precise class Alu sequences that are very similar or identical in quantity and sequence to those in human DNA. Human and mandrill are moderately distant species with a single-copy DNA divergence of about 6%. Nevertheless, their recently inserted Alu sequences arise by retroposition of transcripts of source genes with nearly identical sequences. Apparently a gene present in our common ancestor at the time of branching was inherited and highly conserved in sequence in both the lineage of Old World monkeys and the lineage of apes and man.

  6. Polar ionosphere as a source of the storm time ring current

    SciTech Connect

    Cladis, J.B.; Francis, W.E.

    1985-04-01

    The transport of ions from the polar ionosphere to the inner magnetosphere during storm time conditions has been computed using a Monte Carlo diffusion code. The effect of the electrostatic turbulence assumed to be present during the substorm expansion phase was simulated by a process that accelerated the ions stochastically perpendicular to the magnetic field with a diffusion coefficient proportional to the rate of energization of the ions by the induced electric field. This diffusion process was continued as the ions were convected from the plasma sheet boundary layer to the double-spiral injection boundary. Inward of the injection boundary the ions were convected adiabatically. By using as input an O/sup +/ flux of 2.8 x 10/sup 8/ cm/sup -2/ s/sup -1/ (w>10 eV) and an H/sup +/ flux of 5.5 x 10/sup 8/ cm/sup -2/ s/sup -1/ (w>.63 eV) the computed distribution functions of the ions in the ring current were found to be in good agreement, over a wide range in L(4--8), with measurements made with the ISEE 1 satellite during a storm. This O/sup +/ flux and a large part of the H/sup +/ flux appear to be consistent with the DE-1 and DE-2 satellite measurements of the polar ionospheric outflow during disturbed times.

  7. High Current Density, Long Life Cathodes for High Power RF Sources

    SciTech Connect

    Ives, Robert Lawrence; Collins, George; Falce, Lou; Schwartzkopf, Steve; Busbaher, Daniel

    2014-01-22

    This program was tasked with improving the quality and expanding applications for Controlled Porosity Reservoir (CPR) cathodes. Calabazas Creek Research, Inc. (CCR) initially developed CPR cathodes on a DOE-funded SBIR program to improve cathodes for magnetron injection guns. Subsequent funding was received from the Defense Advanced Research Projects Agency. The program developed design requirements for implementation of the technology into high current density cathodes for high frequency applications. During Phase I of this program, CCR was awarded the prestigious 2011 R&D100 award for this technology. Subsequently, the technology was presented at numerous technical conferences. A patent was issued for the technology in 2009. These cathodes are now marketed by Semicon Associates, Inc. in Lexington, KY. They are the world’s largest producer of cathodes for vacuum electron devices. During this program, CCR teamed with Semicon Associates, Inc. and Ron Witherspoon, Inc. to improve the fabrication processes and expand applications for the cathodes. Specific fabrications issues included the quality of the wire winding that provides the basic structure and the sintering to bond the wires into a robust, cohesive structure. The program also developed improved techniques for integrating the resulting material into cathodes for electron guns.

  8. Development of cryogenic readout electronics using fully-depleted-silicon-on-insulator CMOS process for future space borne far-infrared image sensors

    NASA Astrophysics Data System (ADS)

    Nagata, Hirohisa; Wada, Takehiko; Ikeda, Hirokazu; Arai, Yasuo; Ohno, Morifumi

    2009-12-01

    We measured the static characteristics and noise spectra of FD-SOI-CMOS at liquid helium temperature where many bulk-CMOS transistors suffer from anomalous behaviors on the current-voltage curves such as kink phenomena. The test results showed that the static characteristics depend on the layouts of the FD-SOI-CMOS transistor. While a body floating FD-SOI-CMOS transistor showed strong anomalous effects on the I-V curves, body-tied and ST ones showed much better static characteristics than the body floating one. Using the characteristics derived from the FET measurements, we show that a low power and high gain preamplifier suitable for far-infrared detectors can be designed.

  9. The development of a realistic source term for sodium-cooled fast reactors : assessment of current status and future needs.

    SciTech Connect

    LaChance, Jeffrey L.; Phillips, Jesse; Parma, Edward J., Jr.; Olivier, Tara Jean; Middleton, Bobby D.

    2011-06-01

    Sodium-cooled fast reactors (SFRs) continue to be proposed and designed throughout the United States and the world. Although the number of SFRs actually operating has declined substantially since the 1980s, a significant interest in advancing these types of reactor systems remains. Of the many issues associated with the development and deployment of SFRs, one of high regulatory importance is the source term to be used in the siting of the reactor. A substantial amount of modeling and experimental work has been performed over the past four decades on accident analysis, sodium coolant behavior, and radionuclide release for SFRs. The objective of this report is to aid in determining the gaps and issues related to the development of a realistic, mechanistically derived source term for SFRs. This report will allow the reader to become familiar with the severe accident source term concept and gain a broad understanding of the current status of the models and experimental work. Further, this report will allow insight into future work, in terms of both model development and experimental validation, which is necessary in order to develop a realistic source term for SFRs.

  10. Hard traits of three Bromus species in their source area explain their current invasive success

    NASA Astrophysics Data System (ADS)

    Fenesi, Annamária; Rédei, Tamás; Botta-Dukát, Zoltán

    2011-09-01

    We address two highly essential question using three Eurasian Bromus species with different invasion success in North America as model organisms: (1) why some species become invasive and others do not, and (2) which traits can confer pre-adaptation for species to become invasive elsewhere. While the morphology and phenology of the chosen bromes ( Bromus tectorum, Bromus sterilis and Bromus squarrosus) are highly similar, we measured complex traits often associated with invasive success: phenotypic plasticity, competitive ability and generalist-specialist character. We performed common-garden experiments, community- and landscape-level surveys in areas of co-occurrence in Central Europe (Hungary) that could have served as donor region for American introductions. According to our results, the three bromes are unequally equipped with trait that could enhance invasiveness. B. tectorum possesses several traits that may be especially relevant: it has uniquely high phenotypic plasticity, as demonstrated in a nitrogen addition experiment, and it is a habitat generalist, thriving in a wide range of habitats, from semi-natural to degraded ones, and having the widest co-occurrence based niche-breadth. The strength of B. sterilis lies in its ability to use resources unexploited by other species. It can become dominant, but only in one non-natural habitat type, namely the understorey of the highly allelopathic stands of the invasive Robinia pseudoacacia. B. squarrosus is a habitat specialist with low competitive ability, always occurring with low coverage. This ranking of the species' abilities can explain the current spreading success of the three bromes on the North American continent, and highlight the high potential of prehistoric invaders (European archaeophytes) to become invasive elsewhere.

  11. CMOS readout integrated circuit involving pixel-level ADC for microbolometer FPAs

    NASA Astrophysics Data System (ADS)

    Hwang, C. H.; Kwon, I. W.; Lee, Y. S.; Lee, H. C.

    2008-04-01

    The function of most readout integrated circuits (ROIC) for microbolometer focal plane arrays (FPAs) is supplying a bias voltage to a microbolometer of each pixel, integrating the current of a microbolometer, and transferring the signals from pixels to the output of a chip. However, the scale down of CMOS technology allows the integration of other functions. In this paper, we proposed a CMOS ROIC involving a pixel-level analog-to-digital converter (ADC) for 320 × 240 microbolometer FPAs. Such integration would improve the performance of a ROIC at the reduced system cost and power consumption. The noise performance of a microbolometer is improved by using the pixelwise readout structure because integration time can be increased up to 1ms. A Pixel circuit is consisted of a background skimming circuit, a differential amplifier, an integration capacitor and a 10-bit DRAM. First, the microbolometer current is integrated for 1ms after the skimming current correction. The differential amplifier operates as an op-Amp and the integration capacitor makes negative feedback loop between an output and a negative input of the op-Amp. And then, the integrated signal voltage is converted to digital signals using a modified single slope ADC in a pixel when the differential amplifier operates as a comparator and the 10-bit DRAM stores values of a counter. This readout circuit is designed and fabricated using a standard 0.35μm 2-poly 3-metal CMOS technology.

  12. Lab-on-CMOS Integration of Microfluidics and Electrochemical Sensors

    PubMed Central

    Huang, Yue; Mason, Andrew J.

    2013-01-01

    This paper introduces a CMOS-microfluidics integration scheme for electrochemical microsystems. A CMOS chip was embedded into a micro-machined silicon carrier. By leveling the CMOS chip and carrier surface to within 100 nm, an expanded obstacle-free surface suitable for photolithography was achieved. Thin film metal planar interconnects were microfabricated to bridge CMOS pads to the perimeter of the carrier, leaving a flat and smooth surface for integrating microfluidic structures. A model device containing SU-8 microfluidic mixers and detection channels crossing over microelectrodes on a CMOS integrated circuit was constructed using the chip-carrier assembly scheme. Functional integrity of microfluidic structures and on-CMOS electrodes was verified by a simultaneous sample dilution and electrochemical detection experiment within multi-channel microfluidics. This lab-on-CMOS integration process is capable of high packing density, is suitable for wafer-level batch production, and opens new opportunities to combine the performance benefits of on-CMOS sensors with lab-on-chip platforms. PMID:23939616

  13. High responsivity CMOS imager pixel implemented in SOI technology

    NASA Technical Reports Server (NTRS)

    Zheng, X.; Wrigley, C.; Yang, G.; Pain, B.

    2000-01-01

    Availability of mature sub-micron CMOS technology and the advent of the new low noise active pixel sensor (APS) concept have enabled the development of low power, miniature, single-chip, CMOS digital imagers in the decade of the 1990's.

  14. CMOS-compatible RF MEMS switch

    NASA Astrophysics Data System (ADS)

    Lakamraju, Narendra V.; Kim, Bruce; Phillips, Stephen M.

    2004-08-01

    Mobile technologies have relied on RF switches for a long time. Though the basic function of the switch has remained the same, the way they have been made has changed in the recent past. In the past few years work has been done to use MEMS technologies in designing and fabricating an RF switch that would in many ways replace the electronic and mechanical switches that have been used for so long. The work that is described here is an attempt to design and fabricate an RF MEMS switch that can handle higher RF power and have CMOS compatible operating voltages.

  15. Vertical Isolation for Photodiodes in CMOS Imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata

    2008-01-01

    In a proposed improvement in complementary metal oxide/semi conduct - or (CMOS) image detectors, two additional implants in each pixel would effect vertical isolation between the metal oxide/semiconductor field-effect transistors (MOSFETs) and the photodiode of the pixel. This improvement is expected to enable separate optimization of the designs of the photodiode and the MOSFETs so as to optimize their performances independently of each other. The purpose to be served by enabling this separate optimization is to eliminate or vastly reduce diffusion cross-talk, thereby increasing sensitivity, effective spatial resolution, and color fidelity while reducing noise.

  16. Measurement of ion species in high current ECR H+/D+ ion source for IFMIF (International Fusion Materials Irradiation Facility)

    NASA Astrophysics Data System (ADS)

    Shinto, K.; Senée, F.; Ayala, J.-M.; Bolzon, B.; Chauvin, N.; Gobin, R.; Ichimiya, R.; Ihara, A.; Ikeda, Y.; Kasugai, A.; Kitano, T.; Kondo, K.; Marqueta, A.; Okumura, Y.; Takahashi, H.; Valette, M.

    2016-02-01

    Ion species ratio of high current positive hydrogen/deuterium ion beams extracted from an electron-cyclotron-resonance ion source for International Fusion Materials Irradiation Facility accelerator was measured by the Doppler shift Balmer-α line spectroscopy. The proton (H+) ratio at the middle of the low energy beam transport reached 80% at the hydrogen ion beam extraction of 100 keV/160 mA and the deuteron (D+) ratio reached 75% at the deuterium ion beam extraction of 100 keV/113 mA. It is found that the H+ ratio measured by the spectroscopy gives lower than that derived from the phase-space diagram measured by an Allison scanner type emittance monitor. The H+/D+ ratio estimated by the emittance monitor was more than 90% at those extraction currents.

  17. Load insensitive electrical device. [power converters for supplying direct current at one voltage from a source at another voltage

    NASA Technical Reports Server (NTRS)

    Schwarz, F. C. (Inventor)

    1974-01-01

    A class of power converters is described for supplying direct current at one voltage from a source at another voltage. It includes a simple passive circuit arrangement of solid-state switches, inductors, and capacitors by which the output voltage of the converter tends to remain constant in spite of changes in load. The switches are sensitive to the current flowing in the circuit and are employed to permit the charging of capacitance devices in accordance with the load requirements. Because solid-state switches (such as SCR's) may be used with relatively high voltage and because of the inherent efficiency of the invention that permits relatively high switching frequencies, power supplies built in accordance with the invention, together with their associated cabling, can be substantially lighter in weight for a given output power level and efficiency of operation than systems of the prior art.

  18. Design and Development of High Voltage Direct Current (DC) Sources for the Solar Array Module Plasma Interaction Experiment

    NASA Technical Reports Server (NTRS)

    Bibyk, Irene K.; Wald, Lawrence W.

    1995-01-01

    Two programmable, high voltage DC power supplies were developed as part of the flight electronics for the Solar Array Module Plasma Interaction Experiment (SAMPIE). SAMPIE's primary objectives were to study and characterize the high voltage arcing and parasitic current losses of various solar cells and metal samples within the space plasma of low earth orbit (LEO). High voltage arcing can cause large discontinuous changes in spacecraft potential which lead to damage of the power system materials and significant Electromagnetic Interference (EMI). Parasitic currents cause a change in floating potential which lead to reduced power efficiency. These primary SAMPIE objectives were accomplished by applying artificial biases across test samples over a voltage range from -600 VDC to +300 VDC. This paper chronicles the design, final development, and test of the two programmable high voltage sources for SAMPIE. The technical challenges to the design for these power supplies included vacuum, space plasma effects, thermal protection, Shuttle vibrations and accelerations.

  19. A simple and low-cost biofilm quantification method using LED and CMOS image sensor.

    PubMed

    Kwak, Yeon Hwa; Lee, Junhee; Lee, Junghoon; Kwak, Soo Hwan; Oh, Sangwoo; Paek, Se-Hwan; Ha, Un-Hwan; Seo, Sungkyu

    2014-12-01

    A novel biofilm detection platform, which consists of a cost-effective red, green, and blue light-emitting diode (RGB LED) as a light source and a lens-free CMOS image sensor as a detector, is designed. This system can measure the diffraction patterns of cells from their shadow images, and gather light absorbance information according to the concentration of biofilms through a simple image processing procedure. Compared to a bulky and expensive commercial spectrophotometer, this platform can provide accurate and reproducible biofilm concentration detection and is simple, compact, and inexpensive. Biofilms originating from various bacterial strains, including Pseudomonas aeruginosa (P. aeruginosa), were tested to demonstrate the efficacy of this new biofilm detection approach. The results were compared with the results obtained from a commercial spectrophotometer. To utilize a cost-effective light source (i.e., an LED) for biofilm detection, the illumination conditions were optimized. For accurate and reproducible biofilm detection, a simple, custom-coded image processing algorithm was developed and applied to a five-megapixel CMOS image sensor, which is a cost-effective detector. The concentration of biofilms formed by P. aeruginosa was detected and quantified by varying the indole concentration, and the results were compared with the results obtained from a commercial spectrophotometer. The correlation value of the results from those two systems was 0.981 (N = 9, P < 0.01) and the coefficients of variation (CVs) were approximately threefold lower at the CMOS image-sensor platform. PMID:25455019

  20. Smart CMOS sensor for wideband laser threat detection

    NASA Astrophysics Data System (ADS)

    Schwarze, Craig R.; Sonkusale, Sameer

    2015-09-01

    The proliferation of lasers has led to their widespread use in applications ranging from short range standoff chemical detection to long range Lidar sensing and target designation operating across the UV to LWIR spectrum. Recent advances in high energy lasers have renewed the development of laser weapons systems. The ability to measure and assess laser source information is important to both identify a potential threat as well as determine safety and nominal hazard zone (NHZ). Laser detection sensors are required that provide high dynamic range, wide spectral coverage, pulsed and continuous wave detection, and large field of view. OPTRA, Inc. and Tufts have developed a custom ROIC smart pixel imaging sensor architecture and wavelength encoding optics for measurement of source wavelength, pulse length, pulse repetition frequency (PRF), irradiance, and angle of arrival. The smart architecture provides dual linear and logarithmic operating modes to provide 8+ orders of signal dynamic range and nanosecond pulse measurement capability that can be hybridized with the appropriate detector array to provide UV through LWIR laser sensing. Recent advances in sputtering techniques provide the capability for post-processing CMOS dies from the foundry and patterning PbS and PbSe photoconductors directly on the chip to create a single monolithic sensor array architecture for measuring sources operating from 0.26 - 5.0 microns, 1 mW/cm2 - 2 kW/cm2.

  1. A CMOS image sensor using high-speed lock-in pixels for stimulated Raman scattering

    NASA Astrophysics Data System (ADS)

    Lioe, DeXing; Mars, Kamel; Takasawa, Taishi; Yasutomi, Keita; Kagawa, Keiichiro; Hashimoto, Mamoru; Kawahito, Shoji

    2016-03-01

    A CMOS image sensor using high-speed lock-in pixels for stimulated Raman scattering (SRS) spectroscopy is presented in this paper. The effective SRS signal from the stimulated emission of SRS mechanism is very small in contrast to the offset of a probing laser source, which is in the ratio of 10-4 to 10-5. In order to extract this signal, the common offset component is removed, and the small difference component is sampled using switched-capacitor integrator with a fully differential amplifier. The sampling is performed over many integration cycles to achieve appropriate amplification. The lock-in pixels utilizes high-speed lateral electric field charge modulator (LEFM) to demodulate the SRS signal which is modulated at high-frequency of 20MHz. A prototype chip is implemented using 0.11μm CMOS image sensor technology.

  2. Verification of a SEU model for advanced 1-micron CMOS structures using heavy ions

    NASA Technical Reports Server (NTRS)

    Cable, J. S.; Carter, J. R.; Witteles, A. A.

    1986-01-01

    Modeling and test results are reported for 1 micron CMOS circuits. Analytical predictions are correlated with experimental data, and sensitivities to process and design variations are discussed. Unique features involved in predicting the SEU performance of these devices are described. The results show that the critical charge for upset exhibits a strong dependence on pulse width for very fast devices, and upset predictions must factor in the pulse shape. Acceptable SEU error rates can be achieved for a 1 micron bulk CMOS process. A thin retrograde well provides complete SEU immunity for N channel hits at normal incidence angle. Source interconnect resistance can be important parameter in determining upset rates, and Cf-252 testing can be a valuable tool for cost-effective SEU testing.

  3. Intrinsic signal imaging of brain function using a small implantable CMOS imaging device

    NASA Astrophysics Data System (ADS)

    Haruta, Makito; Sunaga, Yoshinori; Yamaguchi, Takahiro; Takehara, Hironari; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Ohta, Jun

    2015-04-01

    A brain functional imaging technique over a long period is important to understand brain functions related to animal behavior. We have developed a small implantable CMOS imaging device for measuring brain activity in freely moving animals. This device is composed of a CMOS image sensor chip and LEDs for illumination. In this study, we demonstrated intrinsic signal imaging of blood flow using the device with a green LED light source at a peak wavelength of 535 nm, which corresponds to one of the absorption spectral peaks of blood cells. Brain activity increases regional blood flow. The device light weight of about 0.02 g makes it possible to stably measure brain activity through blood flow over a long period. The device has successfully measured the intrinsic signal related to sensory stimulation on the primary somatosensory cortex.

  4. Experimental characterization of peripheral photocurrent in CMOS photodiodes down to 65 nm technology

    NASA Astrophysics Data System (ADS)

    Blanco-Filgueira, B.; López, P.; Roldán, J. B.

    2013-04-01

    In this work, an in-depth experimental characterization of submicron CMOS p-n+ junction photodiodes operating under uniform illumination in the visible range is performed. The experimental measurements are used to validate a previous two-dimensional analytical model for the photoresponse estimation of these structures, which pays special attention to the lateral collection and was verified by means of device simulations. To do so, square p-n+ junction photodiodes with different sizes down to an active area of 0.56 μm wide have been fabricated in 180 and 65 nm technological nodes and characterized under blue, green and red light sources. As a result, the importance of the lateral collection in the overall response for small photodiodes that was previously theoretically reported is confirmed. The experimentally validated two-dimensional analytical model is a powerful tool that can be employed for the design of CMOS imagers and related electronics circuits.

  5. Controlling Influence of Magnetic Field on Solar Wind Outflow: An Investigation using Current Sheet Source Surface Model

    NASA Astrophysics Data System (ADS)

    Poduval, Bala

    2016-05-01

    The Wang and Sheeley empirical relationship between magnetic flux tube expansion (FTE) in the inner corona and the solar wind speed (SWS) observed near the Earth's orbit forms the basis of current solar wind prediction techniques such as WSA/ENLIL. Based on this concept, the Current Sheet Source Surface (CSSS) model, built on a corona in magnetostatic equilibrium incorporating electric currents, has recently been validated for solar wind prediction. We present the initial results of an investigation of the influence of solar magnetic field in determining the solar wind outflow using the CSSS model. We found that there is significant temporal variation in the functional form of FTE--SWS relation and that the accuracy of CSSS predictions are nearly twice better than the PFSS predcitions. We attribute the greater accuracy of CSSS predictions to the model's capability to trace the solar wind sources better than the PFSS model and, perhaps, the treatment of electric currents in the inner corona in the CSSS model.Synoptic maps of coronal magnetic field, similar to the photospheric ones, are still a long way away, though techniques are under development, especially using the Coronal Multi-Channel Polarimeter data. And the near--Sun regions below 0.3 AU remain unexplored until Solar Probe Plus and Solar Orbiter are launched. A well-validated model of the corona capable of providing reliable solar wind conditions in the near-Sun region will be of great use in interpreting the data collected by these spacecraft. The magnetohydrodynamic models such as ENLIL for space weather prediction, require ambient plasma and magnetic field information at their inner boundaries, usually provided by magnetostatic models, such as PFSS, in the absence of sufficient observational data. Our present work is an attempt to provide methods to generate reliable solar wind conditions in the near-Sun region.

  6. Non-invasive probe diagnostic method for electron temperature and ion current density in atmospheric pressure plasma jet source

    SciTech Connect

    Kim, Young-Cheol; Kim, Yu-Sin; Lee, Hyo-Chang; Moon, Jun-Hyeon; Chung, Chin-Wook; Kim, Yunjung; Cho, Guangsup

    2015-08-15

    The electrical probe diagnostics are very hard to be applied to atmospheric plasmas due to severe perturbation by the electrical probes. To overcome this, the probe for measuring electron temperature and ion current density is indirectly contacted with an atmospheric jet source. The plasma parameters are obtained by using floating harmonic analysis. The probe is mounted on the quartz tube that surrounds plasma. When a sinusoidal voltage is applied to a probe contacting on a quartz tube, the electrons near the sheath at dielectric tube are collected and the probe current has harmonic components due to probe sheath nonlinearity. From the relation of the harmonic currents and amplitude of the sheath voltage, the electron temperature near the wall can be obtained with collisional sheath model. The electron temperatures and ion current densities measured at the discharge region are in the ranges of 2.7–3.4 eV and 1.7–5.2 mA/cm{sup 2} at various flow rates and input powers.

  7. Comprehensive procedural approach for transferring or comparative analysis of analogue IP building blocks towards different CMOS technologies

    NASA Astrophysics Data System (ADS)

    Gevaert, Dorine M.

    2009-05-01

    The challenges for the next generation of integrated circuit design of analogue and mixed-signal building blocks in standard CMOS technologies for signal conversion demand research progress in the emerging scientific fields of device physics and modelling, converter architectures, design automation, quality assurance and cost factor analysis. Estimation of mismatch for analogue building blocks at the conceptual level and the impact on active area is not a straightforward calculation. The proposed design concepts reduce the over-sizing of transistors, compared with the existing methods, with 15 to 20% for the same quality specification. Besides the reduction of the silicon cost also the design time cost for new topologies is reduced considerably. Comparison has been done for current mode converters (ADC and DAC) and focussing on downscaling technologies. The developed method offers an integrated approach on the estimation of architecture performances, yield and IP-reuse. Matching energy remains constant over process generations and will be the limiting factor for current signal processing. The comprehensive understanding of all sources of mismatches and the use of physical based mismatch modelling in the prediction of mismatch errors, more adequate and realistic sizing of all transistors will result in an overall area reduction of analogue IP blocks. For each technology the following design curves are automatically developed: noise curves for a specified signal bandwidth, choice of overdrive voltage versus lambda and output resistance, physical mismatch error modelling on target current levels. The procedural approach shares knowledge of several design curves and speeds up the design time.

  8. Theoretical performance analysis for CMOS based high resolution detectors.

    PubMed

    Jain, Amit; Bednarek, Daniel R; Rudin, Stephen

    2013-03-01

    High resolution imaging capabilities are essential for accurately guiding successful endovascular interventional procedures. Present x-ray imaging detectors are not always adequate due to their inherent limitations. The newly-developed high-resolution micro-angiographic fluoroscope (MAF-CCD) detector has demonstrated excellent clinical image quality; however, further improvement in performance and physical design may be possible using CMOS sensors. We have thus calculated the theoretical performance of two proposed CMOS detectors which may be used as a successor to the MAF. The proposed detectors have a 300 μm thick HL-type CsI phosphor, a 50 μm-pixel CMOS sensor with and without a variable gain light image intensifier (LII), and are designated MAF-CMOS-LII and MAF-CMOS, respectively. For the performance evaluation, linear cascade modeling was used. The detector imaging chains were divided into individual stages characterized by one of the basic processes (quantum gain, binomial selection, stochastic and deterministic blurring, additive noise). Ranges of readout noise and exposure were used to calculate the detectors' MTF and DQE. The MAF-CMOS showed slightly better MTF than the MAF-CMOS-LII, but the MAF-CMOS-LII showed far better DQE, especially for lower exposures. The proposed detectors can have improved MTF and DQE compared with the present high resolution MAF detector. The performance of the MAF-CMOS is excellent for the angiography exposure range; however it is limited at fluoroscopic levels due to additive instrumentation noise. The MAF-CMOS-LII, having the advantage of the variable LII gain, can overcome the noise limitation and hence may perform exceptionally for the full range of required exposures; however, it is more complex and hence more expensive. PMID:24353390

  9. A CMOS high speed imaging system design based on FPGA

    NASA Astrophysics Data System (ADS)

    Tang, Hong; Wang, Huawei; Cao, Jianzhong; Qiao, Mingrui

    2015-10-01

    CMOS sensors have more advantages than traditional CCD sensors. The imaging system based on CMOS has become a hot spot in research and development. In order to achieve the real-time data acquisition and high-speed transmission, we design a high-speed CMOS imaging system on account of FPGA. The core control chip of this system is XC6SL75T and we take advantages of CameraLink interface and AM41V4 CMOS image sensors to transmit and acquire image data. AM41V4 is a 4 Megapixel High speed 500 frames per second CMOS image sensor with global shutter and 4/3" optical format. The sensor uses column parallel A/D converters to digitize the images. The CameraLink interface adopts DS90CR287 and it can convert 28 bits of LVCMOS/LVTTL data into four LVDS data stream. The reflected light of objects is photographed by the CMOS detectors. CMOS sensors convert the light to electronic signals and then send them to FPGA. FPGA processes data it received and transmits them to upper computer which has acquisition cards through CameraLink interface configured as full models. Then PC will store, visualize and process images later. The structure and principle of the system are both explained in this paper and this paper introduces the hardware and software design of the system. FPGA introduces the driven clock of CMOS. The data in CMOS is converted to LVDS signals and then transmitted to the data acquisition cards. After simulation, the paper presents a row transfer timing sequence of CMOS. The system realized real-time image acquisition and external controls.

  10. Controlling Influence of Magnetic Field on Solar Wind Outflow: An Investigation using Current Sheet Source Surface Model

    NASA Astrophysics Data System (ADS)

    Poduval, B.

    2016-08-01

    This Letter presents the results of an investigation into the controlling influence of large-scale magnetic field of the Sun in determining the solar wind outflow using two magnetostatic coronal models: current sheet source surface (CSSS) and potential field source surface. For this, we made use of the Wang and Sheeley inverse correlation between magnetic flux expansion rate (FTE) and observed solar wind speed (SWS) at 1 au. During the period of study, extended over solar cycle 23 and beginning of solar cycle 24, we found that the coefficients of the fitted quadratic equation representing the FTE–SWS inverse relation exhibited significant temporal variation, implying the changing pattern of the influence of FTE on SWS over time. A particularly noteworthy feature is an anomaly in the behavior of the fitted coefficients during the extended minimum, 2008–2010 (CRs 2073–2092), which is considered due to the particularly complex nature of the solar magnetic field during this period. However, this variation was significant only for the CSSS model, though not a systematic dependence on the phase of the solar cycle. Further, we noticed that the CSSS model demonstrated better solar wind prediction during the period of study, which we attribute to the treatment of volume and sheet currents throughout the corona and the more accurate tracing of footpoint locations resulting from the geometry of the model.

  11. Limitations of current dosimetry for intracavitary accelerated partial breast irradiation with high dose rate iridium-192 and electronic brachytherapy sources

    NASA Astrophysics Data System (ADS)

    Raffi, Julie A.

    Intracavitary accelerated partial breast irradiation (APBI) is a method of treating early stage breast cancer using a high dose rate (HDR) brachytherapy source positioned within the lumpectomy cavity. An expandable applicator stretches the surrounding tissue into a roughly spherical or elliptical shape and the dose is prescribed to 1 cm beyond the edge of the cavity. Currently, dosimetry for these treatments is most often performed using the American Association of Physicists in Medicine Task Group No. 43 (TG-43) formalism. The TG-43 dose-rate equation determines the dose delivered to a homogeneous water medium by scaling the measured source strength with standardized parameters that describe the radial and angular features of the dose distribution. Since TG-43 parameters for each source model are measured or calculated in a homogeneous water medium, the dosimetric effects of the patient's dimensions and composition are not accounted for. Therefore, the accuracy of TG-43 calculations for intracavitary APBI is limited by the presence of inhomogeneities in and around the target volume. Specifically, the breast is smaller than the phantoms used to determine TG-43 parameters and is surrounded by air, ribs, and lung tissue. Also, the composition of the breast tissue itself can affect the dose distribution. This dissertation is focused on investigating the limitations of TG-43 dosimetry for intracavitary APBI for two HDR brachytherapy sources: the VariSource TM VS2000 192Ir source and the AxxentRTM miniature x-ray source. The dose for various conditions was determined using thermoluminescent dosimeters (TLDs) and Monte Carlo (MC) calculations. Accurate measurements and calculations were achieved through the implementation of new measurement and simulation techniques and a novel breast phantom was developed to enable anthropomorphic phantom measurements. Measured and calculated doses for phantom and patient geometries were compared with TG-43 calculated doses to

  12. 1.2 V constant-gm rail-to-rail CMOS Op-Amp input stage with new overlapped transition regions technique for ECG amplifier.

    PubMed

    Lee, Boram; Higman, Ted

    2013-01-01

    The conventional technique of overlapped transition regions for producing a constant transconductance rail to rail Op-Amp input stage can only tolerate a limited amount of voltage shifting. This is limited by the minimum Vgs required for active mode operation of transistors. In this paper, we present a novel overlapped transition regions technique that overcomes the limitation of the conventional technique. This new overlapped transition regions technique has no voltage shifting limit. For both N-type and P-type conventional complementary differential input pairs, one source follower and one MOSFET are added to control the saturation point of current of input pairs. For 1.2 V single supply voltage, simulation results demonstrate ±3.71% of overall transconductance variation. Cadence SPECTRE simulator and TSMC 0.25-µm CMOS technology are used to layout and simulate this work. PMID:24110471

  13. Fractional diffusion analysis of the electromagnetic fields generated by a transient straight current source over a porous geological media

    NASA Astrophysics Data System (ADS)

    Ge, J.; Everett, M. E.; Weiss, C. J.

    2010-12-01

    An interpretation based on the Continuous Time Random Walk theory (CTRW) to the diffusion of electromagnetic fields generated by a transient straight current source over a porous geological media is presented here. The CTRW theory is demonstrated to be a powerful tool to concisely and more accurately model a transport process in a fractal medium with complex structures, comparing to the classical transport theory. In the controlled-source electromagnetic (EM) induction setting, the time dependent evolution of the EM field of some sources over a rough medium are governed by the fractional diffusion EM equation in a CTRW sense. The master equation can be solved for a uniform conducting half-space in the Laplace domain semi-analytically. We use 2D finite difference method to calculate the solution numerically for the assigned space and transform to time domain with Gaver-Stehfest algorithm. Here we adopt a spatially uniform roughness parameter β in the solution to characterize the complexity of the geoelectrical structure of the geological medium. To introduce the heterogeneity to our model, we set up the space as several 2 D blocks with different conductivities and βs. Then we compare our results with the synthetic data we got from the high resolution numerical simulations. We are able to show that by introducing the heterogeneity to the fractional diffusion perspective, our approach is competent for tracing the diffusion process with less model parameters.

  14. A novel colour-sensitive CMOS detector

    NASA Astrophysics Data System (ADS)

    Langfelder, G.; Longoni, A.; Zaraga, F.

    2009-10-01

    A novel colour-sensitive semiconductor detector is proposed. The device (named Transverse Field Detector (TFD)) can be used to measure the colour of the incident light without any colour filter. The device is completely compatible with standard CMOS processes and is suitable to be integrated in a pixel array for imaging purposes. The working principle is based on the capability of this device to collect at different superficial junctions the carriers, generated at different depths, by means of suitable transverse electric fields. The transverse components of the electric field are generated inside the depleted region by a suitable bias of the superficial junctions. Thanks to the differences in the light absorption coefficients at different wavelengths, the device performs colour separation. Among the advantages of this approach are the capability of an active tuning of the pixel colour response, which can be obtained just by changing the biasing values of collecting junctions, and foreseen higher colour fidelity, thanks to the easy extension to four colour pixels. First test structures of three colours TFD pixels were designed and built in a standard CMOS 90 nm technology. Operative principles of the device and first experimental results are presented.

  15. A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

    PubMed Central

    Feruglio, Sylvain; Lu, Guo-Neng; Garda, Patrick; Vasilescu, Gabriel

    2008-01-01

    A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications.

  16. Integration of nanostructured planar diffractive lenses dedicated to near infrared detection for CMOS image sensors.

    PubMed

    Lopez, Thomas; Massenot, Sébastien; Estribeau, Magali; Magnan, Pierre; Pardo, Fabrice; Pelouard, Jean-Luc

    2016-04-18

    This paper deals with the integration of metallic and dielectric nanostructured planar lenses into a pixel from a silicon based CMOS image sensor, for a monochromatic application at 1.064 μm. The first is a Plasmonic Lens, based on the phase delay through nanoslits, which has been found to be hardly compatible with current CMOS technology and exhibits a notable metallic absorption. The second is a dielectric Phase-Fresnel Lens integrated at the top of a pixel, it exhibits an Optical Efficiency (OE) improved by a few percent and an angle of view of 50°. The third one is a metallic diffractive lens integrated inside a pixel, which shows a better OE and an angle of view of 24°. The last two lenses exhibit a compatibility with a spectral band close to 1.064 μm. PMID:27137315

  17. The Speedster-EXD - A New Event-Triggered Hybrid CMOS X-ray Detector

    NASA Astrophysics Data System (ADS)

    Griffith, Christopher; Falcone, Abraham; Prieskorn, Zachary; Burrows, David N.

    2014-08-01

    We present the characterization of a new event driven x-ray hybrid CMOS detector developed by Teledyne imaging Sensors in collaboration with Penn State University. Hybrid CMOS detectors currently have many advantages over CCD’s including lower susceptibility to radiation damage, lower power consumption, and faster read-out time to avoid pile-up. The Speedster-EXD includes an in-pixel comparator that enables read out of only the pixels with signal from an x-ray event. The comparator threshold can be set by the user and only pixels with signal above this threshold are read out. This event-driven readout feature can increase effective frame rates by orders of magnitude, enabling future x-ray missions. The Speedster-EXD hybrid CMOS detector also has additional features that improve upon our previous generation of detectors including: (1) a low-noise, high-gain CTIA amplifier to eliminate interpixel capacitance crosstalk, (2) four different gain modes to optimize either full well capacity or energy resolution, and (3) in-pixel CDS subtraction to reduce read noise. We present the read noise, dark current, interpixel capacitance, energy resolution, and gain variation measurements of the Speedster-EXD detector.

  18. The Speedster-EXD - A New Event-Triggered Hybrid CMOS X-ray Detector

    NASA Astrophysics Data System (ADS)

    Griffith, Christopher; Falcone, A.; Prieskorn, Z.; Burrows, D. N.

    2014-01-01

    We report on the development of a new Teledyne Imaging Systems hybrid CMOS x-ray detector called the Speedster-EXD which is capable of event-triggered read-out. Hybrid CMOS detectors currently have many advantages over CCDs including lower susceptibility to radiation damage, lower power consumption, and faster read out time to avoid pile-up. In addition to these advantages, the Speedster-EXD has new in-pixel circuitry which includes CDS subtraction to reduce read noise and a CTIA amplifier to eliminate interpixel capacitance crosstalk. The new circuitry also includes an in-pixel comparator that triggers on x-ray events. The comparator feature allows the detector to only read pixels in which an x-ray is detected. This feature increases the detector array effective frame rate by orders of magnitude. The current advantages of hybrid CMOS x-ray detectors combined with the new in-pixel circuitry makes the Speedster-EXD an ideal candidate for future high throughput x-ray missions requiring large-format silicon imagers.

  19. Hybrid optically interconnected microprocessor: an InP I-MSM integrated onto a mixed-signal CMOS analog optical receiver with a digital CMOS microprocessor

    NASA Astrophysics Data System (ADS)

    Chang, Jae J.; Jung, Sungyong; Vrazel, Michael; Jung, Keeshik; Lee, Myunghee; Brooke, Martin A.; Jokerst, Nan Marie; Wills, Scott

    2000-05-01

    This paper presents the results of simultaneously working fully-differential optoelectronic receiver fabricated in Si CMOS with digital SIMD microprocessor on the same die next to analog, optical interface circuitry, the receiver have been hybrid integrated with a thin film InP-based inverted (I)-MSM photodetector and optically tested using external light source modulated by digital input signal. The noise immunity to mixed-signal digital switching noise of the differential receiver has been shown to be good enough to generate 10-9 BER.

  20. Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

    PubMed

    Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

    2015-10-01

    In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure. PMID:26726356

  1. Ion sources for ion implantation technology (invited)

    SciTech Connect

    Sakai, Shigeki Hamamoto, Nariaki; Inouchi, Yutaka; Umisedo, Sei; Miyamoto, Naoki

    2014-02-15

    Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm × 10 cm, and the beam uniformity is important as well as the total target beam current.

  2. Uniform illumination and rigorous electromagnetic simulations applied to CMOS image sensors.

    PubMed

    Vaillant, Jérôme; Crocherie, Axel; Hirigoyen, Flavien; Cadien, Adam; Pond, James

    2007-04-30

    This paper describes a new methodology we have developed for the optical simulation of CMOS image sensors. Finite Difference Time Domain (FDTD) software is used to simulate light propagation and diffraction effects throughout the stack of dielectrics layers. With the use of an incoherent summation of plane wave sources and Bloch Periodic Boundary Conditions, this new methodology allows not only the rigorous simulation of a diffuse-like source which reproduces real conditions, but also an important gain of simulation efficiency for 2D or 3D electromagnetic simulations. This paper presents a theoretical demonstration of the methodology as well as simulation results with FDTD software from Lumerical Solutions. PMID:19532805

  3. All-CMOS night vision viewer with integrated microdisplay

    NASA Astrophysics Data System (ADS)

    Goosen, Marius E.; Venter, Petrus J.; du Plessis, Monuko; Faure, Nicolaas M.; Janse van Rensburg, Christo; Rademeyer, Pieter

    2014-02-01

    The unrivalled integration potential of CMOS has made it the dominant technology for digital integrated circuits. With the advent of visible light emission from silicon through hot carrier electroluminescence, several applications arose, all of which rely upon the advantages of mature CMOS technologies for a competitive edge in a very active and attractive market. In this paper we present a low-cost night vision viewer which employs only standard CMOS technologies. A commercial CMOS imager is utilized for near infrared image capturing with a 128x96 pixel all-CMOS microdisplay implemented to convey the image to the user. The display is implemented in a standard 0.35 μm CMOS process, with no process alterations or post processing. The display features a 25 μm pixel pitch and a 3.2 mm x 2.4 mm active area, which through magnification presents the virtual image to the user equivalent of a 19-inch display viewed from a distance of 3 meters. This work represents the first application of a CMOS microdisplay in a low-cost consumer product.

  4. Low-dose performance of wafer-scale CMOS-based X-ray detectors

    NASA Astrophysics Data System (ADS)

    Maes, Willem H.; Peters, Inge M.; Smit, Chiel; Kessener, Yves; Bosiers, Jan

    2015-03-01

    Compared to published amorphous-silicon (TFT) based X-ray detectors, crystalline silicon CMOS-based active-pixel detectors exploit the benefits of low noise, high speed, on-chip integration and featuring offered by CMOS technology. This presentation focuses on the specific advantage of high image quality at very low dose levels. The measurement of very low dose performance parameters like Detective Quantum Efficiency (DQE) and Noise Equivalent Dose (NED) is a challenge by itself. Second-order effects like defect pixel behavior, temporal and quantization noise effects, dose measurement accuracy and limitation of the x-ray source settings will influence the measurements at very low dose conditions. Using an analytical model to predict the low dose behavior of a detector from parameters extracted from shot-noise limited dose levels is presented. These models can also provide input for a simulation environment for optimizing the performance of future detectors. In this paper, models for predicting NED and the DQE at very low dose are compared to measurements on different CMOS detectors. Their validity for different sensor and optical stack combinations as well as for different x-ray beam conditions was validated.

  5. Gun muzzle flash detection using a CMOS single photon avalanche diode

    NASA Astrophysics Data System (ADS)

    Merhav, Tomer; Savuskan, Vitali; Nemirovsky, Yael

    2013-10-01

    Si based sensors, in particular CMOS Image sensors, have revolutionized low cost imaging systems but to date have hardly been considered as possible candidates for gun muzzle flash detection, due to performance limitations, and low SNR in the visible spectrum. In this study, a CMOS Single Photon Avalanche Diode (SPAD) module is used to record and sample muzzle flash events in the visible spectrum, from representative weapons, common on the modern battlefield. SPADs possess two crucial properties for muzzle flash imaging - Namely, very high photon detection sensitivity, coupled with a unique ability to convert the optical signal to a digital signal at the source pixel, thus practically eliminating readout noise. This enables high sampling frequencies in the kilohertz range without SNR degradation, in contrast to regular CMOS image sensors. To date, the SPAD has not been utilized for flash detection in an uncontrolled environment, such as gun muzzle flash detection. Gun propellant manufacturers use alkali salts to suppress secondary flashes ignited during the muzzle flash event. Common alkali salts are compounds based on Potassium or Sodium, with spectral emission lines around 769nm and 589nm, respectively. A narrow band filter around the Potassium emission doublet is used in this study to favor the muzzle flash signal over solar radiation. This research will demonstrate the SPAD's ability to accurately sample and reconstruct the temporal behavior of the muzzle flash in the visible wavelength under the specified imaging conditions. The reconstructed signal is clearly distinguishable from background clutter, through exploitation of flash temporal characteristics.

  6. Impact of the Diamond Light Source on research in Earth and environmental sciences: current work and future perspectives.

    PubMed

    Burke, Ian T; Mosselmans, J Frederick W; Shaw, Samuel; Peacock, Caroline L; Benning, Liane G; Coker, Victoria S

    2015-03-01

    Diamond Light Source Ltd celebrated its 10th anniversary as a company in December 2012 and has now accepted user experiments for over 5 years. This paper describes the current facilities available at Diamond and future developments that enhance its capacities with respect to the Earth and environmental sciences. A review of relevant research conducted at Diamond thus far is provided. This highlights how synchrotron-based studies have brought about important advances in our understanding of the fundamental parameters controlling highly complex mineral-fluid-microbe interface reactions in the natural environment. This new knowledge not only enhances our understanding of global biogeochemical processes, but also provides the opportunity for interventions to be designed for environmental remediation and beneficial use. PMID:25624516

  7. Impact of the Diamond Light Source on research in Earth and environmental sciences: current work and future perspectives

    PubMed Central

    Burke, Ian T.; Mosselmans, J. Frederick W.; Shaw, Samuel; Peacock, Caroline L.; Benning, Liane G.; Coker, Victoria S.

    2015-01-01

    Diamond Light Source Ltd celebrated its 10th anniversary as a company in December 2012 and has now accepted user experiments for over 5 years. This paper describes the current facilities available at Diamond and future developments that enhance its capacities with respect to the Earth and environmental sciences. A review of relevant research conducted at Diamond thus far is provided. This highlights how synchrotron-based studies have brought about important advances in our understanding of the fundamental parameters controlling highly complex mineral–fluid–microbe interface reactions in the natural environment. This new knowledge not only enhances our understanding of global biogeochemical processes, but also provides the opportunity for interventions to be designed for environmental remediation and beneficial use. PMID:25624516

  8. Laminar analysis of human neocortical interictal spike generation and propagation: current source density and multiunit analysis in vivo.

    PubMed

    Ulbert, Istvan; Heit, Gary; Madsen, Joseph; Karmos, George; Halgren, Eric

    2004-01-01

    Multicontact microelectrodes were chronically implanted in epilepsy patients undergoing subdural grid implantation for seizure localization. Current source density and multiple unit activity of interictal spikes (IISs) were sampled every approximately 150 microm in a line traversing all layers of a cortical column. Our data suggest that interictal epileptiform events in humans are initiated by large postsynaptic depolarizations, consistent with the hypothesis that human IISs correspond to animal paroxysmal depolarization shifts. Furthermore, the cortical layer where the initial depolarization occurs may differ according to whether the IIS is locally generated or propagated from a distant location, and among the propagated IISs, whether the IIS is in the direct path of propagation or on the periphery of that path. PMID:15281959

  9. Ink-Jet Printed CMOS Electronics from Oxide Semiconductors.

    PubMed

    Garlapati, Suresh Kumar; Baby, Tessy Theres; Dehm, Simone; Hammad, Mohammed; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

    2015-08-01

    Complementary metal oxide semiconductor (CMOS) technology with high transconductance and signal gain is mandatory for practicable digital/analog logic electronics. However, high performance all-oxide CMOS logics are scarcely reported in the literature; specifically, not at all for solution-processed/printed transistors. As a major step toward solution-processed all-oxide electronics, here it is shown that using a highly efficient electrolyte-gating approach one can obtain printed and low-voltage operated oxide CMOS logics with high signal gain (≈21 at a supply voltage of only 1.5 V) and low static power dissipation. PMID:25867029

  10. Quantification of mid and late evoked sinks in laminar current source density profiles of columns in the primary auditory cortex

    PubMed Central

    Schaefer, Markus K.; Hechavarría, Julio C.; Kössl, Manfred

    2015-01-01

    Current source density (CSD) analysis assesses spatiotemporal synaptic activations at somatic and/or dendritic levels in the form of depolarizing current sinks. Whereas many studies have focused on the short (<50 ms) latency sinks, associated with thalamocortical projections, sinks with longer latencies have received less attention. Here, we analyzed laminar CSD patterns for the first 600 ms after stimulus onset in the primary auditory cortex of Mongolian gerbils. By applying an algorithm for contour calculation, three distinct mid and four late evoked sinks were identified in layers I, III, Va, VIa, and VIb. Our results further showed that the patterns of intracortical information-flow remained qualitatively similar for low and for high sound pressure level stimuli at the characteristic frequency (CF) as well as for stimuli ± 1 octave from CF. There were, however, differences associated with the strength, vertical extent, onset latency, and duration of the sinks for the four stimulation paradigms used. Stimuli one octave above the most sensitive frequency evoked a new, and quite reliable, sink in layer Va whereas low level stimulation led to the disappearance of the layer VIb sink. These data indicate the presence of input sources specifically activated in response to level and/or frequency parameters. Furthermore, spectral integration above vs. below the CF of neurons is asymmetric as illustrated by CSD profiles. These results are important because synaptic feedback associated with mid and late sinks—beginning at 50 ms post stimulus latency—is likely crucial for response modulation resulting from higher order processes like memory, learning or cognitive control. PMID:26557058

  11. Wind Farm Stabilization by using DFIG with Current Controlled Voltage Source Converters Taking Grid Codes into Consideration

    NASA Astrophysics Data System (ADS)

    Okedu, Kenneth Eloghene; Muyeen, S. M.; Takahashi, Rion; Tamura, Junji

    Recent wind farm grid codes require wind generators to ride through voltage sags, which means that normal power production should be re-initiated once the nominal grid voltage is recovered. However, fixed speed wind turbine generator system using induction generator (IG) has the stability problem similar to the step-out phenomenon of a synchronous generator. On the other hand, doubly fed induction generator (DFIG) can control its real and reactive powers independently while being operated in variable speed mode. This paper proposes a new control strategy using DFIGs for stabilizing a wind farm composed of DFIGs and IGs, without incorporating additional FACTS devices. A new current controlled voltage source converter (CC-VSC) scheme is proposed to control the converters of DFIG and the performance is verified by comparing the results with those of voltage controlled voltage source converter (VC-VSC) scheme. Another salient feature of this study is to reduce the number of proportionate integral (PI) controllers used in the rotor side converter without degrading dynamic and transient performances. Moreover, DC-link protection scheme during grid fault can be omitted in the proposed scheme which reduces overall cost of the system. Extensive simulation analyses by using PSCAD/EMTDC are carried out to clarify the effectiveness of the proposed CC-VSC based control scheme of DFIGs.

  12. Active induction balance method for metal detector sensing head utilizing transmitter-bucking and dual current source

    NASA Astrophysics Data System (ADS)

    Ambruš, D.; Vasić, D.; Bilas, V.

    2013-06-01

    A central problem in a design of frequency domain electromagnetic induction sensors used in landmine detection is an effective suppression of a direct inductive coupling between the transmitter and the receiver coil (induction balance, IB). In sensing heads based on the transmitter-bucking configuration, IB is achieved by using two concentric transmitter coils with opposing exciter fields in order to create a central magnetic cavity for the receiver coil. This design has numerous advantages over other IB methods in terms of detection sensitivity, spatial resolution, sensor dimensions and suitability for model-based measurements. However, very careful design and precise sensing head geometry are required if a single excitation source is used for driving both transmitter coils. In this paper we analyze the IB sensitivity to small perturbations of geometrical properties of coils. We propose a sensor design with dual current source and active induction balance scheme which overcomes the limitations of geometry-based balancing and potentially provides more efficient compensation of soil effects.

  13. Rapid and reliable seismic source characterization in earthquake early warning systems: current methodologies, results, and new perspectives

    NASA Astrophysics Data System (ADS)

    Colombelli, Simona; Zollo, Aldo

    2016-04-01

    In the present paper, we provided a review of the main principles and methodologies on which the current earthquake early warning systems are grounded and will also provide a perspective view for next future developments and improvements. First, we introduce the standard methodologies for the source characterization in earthquake early warning, with a special focus on the real-time earthquake magnitude determination. We discuss the suitability of existent methodologies and empirical regression laws for very large events. We then present the different approaches for the rapid prediction of the ground shaking and of the potential damaged zone, both based on traditional seismic data and on the use of continuous GPS data. Finally, the last part of the paper provides the perspective view toward a next generation of early warning systems, linking new research achievements about the earthquake rupture nucleation and the development of new methods/technologies aimed at a fast and high-resolution, real-time modeling of the ongoing source process and accurate prediction of the quake shaking at the regional and local scale.

  14. Sources, fate, and pathways of Leeuwin Current water in the Indian Ocean and Great Australian Bight: A Lagrangian study in an eddy-resolving ocean model

    NASA Astrophysics Data System (ADS)

    Yit Sen Bull, Christopher; van Sebille, Erik

    2016-03-01

    The Leeuwin Current is the dominant circulation feature in the eastern Indian Ocean, transporting tropical and subtropical water southward. While it is known that the Leeuwin Current draws its water from a multitude of sources, existing Indian Ocean circulation schematics have never quantified the fluxes of tropical and subtropical source water flowing into the Leeuwin Current. This paper uses virtual Lagrangian particles to quantify the transport of these sources along the Leeuwin Current's mean pathway. Here the pathways and exchange of Leeuwin Current source waters across six coastally bound sectors on the south-west Australian coast are analyzed. This constitutes the first quantitative assessment of Leeuwin Current pathways within an offline, 50 year integration time, eddy-resolving global ocean model simulation. Along the Leeuwin Current's pathway, we find a mean poleward transport of 3.7 Sv in which the tropical sources account for 60-78% of the transport. While the net transport is small, we see large transports flowing in and out of all the offshore boundaries of the Leeuwin Current sectors. Along the Leeuwin Current's pathway, we find that water from the Indonesian Throughflow contributes 50-66% of the seasonal signal. By applying conditions on the routes particles take entering the Leeuwin Current, we find particles are more likely to travel offshore north of 30°S, while south of 30°S, particles are more likely to continue downstream. We find a 0.2 Sv pathway of water from the Leeuwin Current's source regions, flowing through the entire Leeuwin Current pathway into the Great Australian Bight.

  15. Development of an all-permanent-magnet microwave ion source equipped with multicusp magnetic fields for high current proton beam production.

    PubMed

    Tanaka, M; Hara, S; Seki, T; Iga, T

    2008-02-01

    An all-permanent-magnet (APM) microwave hydrogen ion source was developed to reduce the size and to simplify structure of a conventional solenoid coil microwave ion source developed for reliability improvement of high current proton linac application systems. The difficulty in developing the APM source was sensitive dependence of the source performance on axial magnetic field in the microwave discharge chamber. It was difficult to produce high current proton beam stably without precise tuning of the magnetic field using solenoid coils. We lowered the sensitivity using multicusp magnetic fields for plasma confinement at the discharge chamber sidewall of the source. This enabled stable high current proton beam production with the APM microwave ion source with no tuning coil. The water cooling and the power supply for the coils are not necessary for the APM source, which leads to better reliability and system simplification. The outer diameter of the APM source was around 300 mm, which was 20% lower than the coil source. The APM source produced a maximum hydrogen ion beam current of 65 mA (high current density of 330 mA/cm(2), proton ratio of 87%, and beam energy of 30 keV) with a 5 mm diameter extraction aperture, pulse width of 400 micros, and 20 Hz repetition rate at 1.3 kW microwave power. This performance is almost the same as the best performances of the conventional coil sources. The extracted ion beams were focused with electrostatic five-grid lens to match beam to acceptance of radio-frequency quadrupole linacs. The maximum focused beam current through the orifice (5 mm radius) and the lens was 36 mA and the 90% focused beam half-width was 1-2 mm. PMID:18315183

  16. Sub-band structure engineering for advanced CMOS channels

    NASA Astrophysics Data System (ADS)

    Takagi, Shin-ichi; Mizuno, T.; Tezuka, T.; Sugiyama, N.; Nakaharai, S.; Numata, T.; Koga, J.; Uchida, K.

    2005-05-01

    This paper reviews our recent studies of novel CMOS channels based on the concept of sub-band structure engineering. This device design concept can be realized as strained-Si channel MOSFETs, ultra-thin SOI MOSFETs and Ge-on-Insulator (GOI) MOSFETs. An important factor for the electron mobility enhancement is the introduction of larger sub-band energy splitting between the 2- and 4-fold valleys on a (1 0 0) surface, which can be obtained in strained-Si and ultra-thin body channels. The electrical properties of strained-Si MOSFETs are summarized with an emphasis on strained-SOI structures. Also, the importance of the precise control of ultra-thin SOI thickness is pointed out from the experimental results of the SOI thickness dependence of mobility. Furthermore, it is shown that the increase in the sub-band energy splitting can also be effective in obtaining higher current drive of n-channel MOSFETs under ballistic transport regime. This suggests that the current drive enhancement based on MOS channel engineering utilizing strain and ultra-thin body structures can be extended to ultra-short channel MOSFETs dominated by ballistic transport.

  17. CMOS digital pixel sensors: technology and applications

    NASA Astrophysics Data System (ADS)

    Skorka, Orit; Joseph, Dileepan

    2014-04-01

    CMOS active pixel sensor technology, which is widely used these days for digital imaging, is based on analog pixels. Transition to digital pixel sensors can boost signal-to-noise ratios and enhance image quality, but can increase pixel area to dimensions that are impractical for the high-volume market of consumer electronic devices. There are two main approaches to digital pixel design. The first uses digitization methods that largely rely on photodetector properties and so are unique to imaging. The second is based on adaptation of a classical analog-to-digital converter (ADC) for in-pixel data conversion. Imaging systems for medical, industrial, and security applications are emerging lower-volume markets that can benefit from these in-pixel ADCs. With these applications, larger pixels are typically acceptable, and imaging may be done in invisible spectral bands.

  18. CMOS imager for pointing and tracking applications

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata (Inventor); Sun, Chao (Inventor); Yang, Guang (Inventor); Heynssens, Julie B. (Inventor)

    2006-01-01

    Systems and techniques to realize pointing and tracking applications with CMOS imaging devices. In general, in one implementation, the technique includes: sampling multiple rows and multiple columns of an active pixel sensor array into a memory array (e.g., an on-chip memory array), and reading out the multiple rows and multiple columns sampled in the memory array to provide image data with reduced motion artifact. Various operation modes may be provided, including TDS, CDS, CQS, a tracking mode to read out multiple windows, and/or a mode employing a sample-first-read-later readout scheme. The tracking mode can take advantage of a diagonal switch array. The diagonal switch array, the active pixel sensor array and the memory array can be integrated onto a single imager chip with a controller. This imager device can be part of a larger imaging system for both space-based applications and terrestrial applications.

  19. Latchup in CMOS devices from heavy ions

    NASA Technical Reports Server (NTRS)

    Soliman, K.; Nichols, D. K.

    1983-01-01

    It is noted that complementary metal oxide semiconductor (CMOS) microcircuits are inherently latchup prone. The four-layer n-p-n-p structures formed from the parasitic pnp and npn transistors make up a silicon controlled rectifier. If properly biased, this rectifier may be triggered 'ON' by electrical transients, ionizing radiation, or a single heavy ion. This latchup phenomenon might lead to a loss of functionality or device burnout. Results are presented from tests on 19 different device types from six manufacturers which investigate their latchup sensitivity with argon and krypton beams. The parasitic npnp paths are identified in general, and a qualitative rationale is given for latchup susceptibility, along with a latchup cross section for each type of device. Also presented is the correlation between bit-flip sensitivity and latchup susceptibility.

  20. CMOS image sensor with contour enhancement

    NASA Astrophysics Data System (ADS)

    Meng, Liya; Lai, Xiaofeng; Chen, Kun; Yuan, Xianghui

    2010-10-01

    Imitating the signal acquisition and processing of vertebrate retina, a CMOS image sensor with bionic pre-processing circuit is designed. Integration of signal-process circuit on-chip can reduce the requirement of bandwidth and precision of the subsequent interface circuit, and simplify the design of the computer-vision system. This signal pre-processing circuit consists of adaptive photoreceptor, spatial filtering resistive network and Op-Amp calculation circuit. The adaptive photoreceptor unit with a dynamic range of approximately 100 dB has a good self-adaptability for the transient changes in light intensity instead of intensity level itself. Spatial low-pass filtering resistive network used to mimic the function of horizontal cell, is composed of the horizontal resistor (HRES) circuit and OTA (Operational Transconductance Amplifier) circuit. HRES circuit, imitating dendrite of the neuron cell, comprises of two series MOS transistors operated in weak inversion region. Appending two diode-connected n-channel transistors to a simple transconductance amplifier forms the OTA Op-Amp circuit, which provides stable bias voltage for the gate of MOS transistors in HRES circuit, while serves as an OTA voltage follower to provide input voltage for the network nodes. The Op-Amp calculation circuit with a simple two-stage Op-Amp achieves the image contour enhancing. By adjusting the bias voltage of the resistive network, the smoothing effect can be tuned to change the effect of image's contour enhancement. Simulations of cell circuit and 16×16 2D circuit array are implemented using CSMC 0.5μm DPTM CMOS process.

  1. Radiation damage studies on STAR250 CMOS sensor at 300 keV for electron microscopy

    NASA Astrophysics Data System (ADS)

    Faruqi, A. R.; Henderson, R.; Holmes, J.

    2006-09-01

    There is a pressing need for better electronic detectors to replace film for recording high-resolution images using electron cryomicroscopy. Our previous work has shown that direct electron detection in CMOS sensors is promising in terms of resolution and efficiency at 120 keV [A.R. Faruqi, R. Henderson, M. Prydderch, R. Turchetta, P. Allport, A. Evans, Nucl. Instr. and Meth. 546 (2005) 170], but in addition, the detectors must not be damaged by the electron irradiation. We now present new measurements on the radiation tolerance of a 25 μm pitch CMOS active-pixel sensor, the STAR250, which was designed by FillFactory using radiation-hard technology for space applications. Our tests on the STAR250 aimed to establish the imaging performance at 300 keV following irradiation. The residual contrast, measured on shadow images of a 300 mesh grid, was >80% after corrections for increased dark current, following irradiation with up to 5×10 7 electrons/pixel (equivalent to 80,000 electron/μm 2). A CMOS sensor with this degree of radiation tolerance would survive a year of normal usage for low-dose electron cryomicroscopy, which is a very useful advance.

  2. Automation of CMOS technology migration illustrated by RGB to YCrCb analogue converter

    NASA Astrophysics Data System (ADS)

    Naumowicz, M.; Melosik, M.; Katarzynski, P.; Handkiewicz, A.

    2013-09-01

    The paper illustrates a practical example of technology migration applied to the colour space converter realized in CMOS technology. The element has analogue excitation and response signals expressed in current mode. Such converter may be incorporated into an integrated vision sensor for preconditioning acquired image data. The idea of a computer software tool supporting the automated migration and design reuse is presented as the major contribution. The mentioned tools implement the Hooke-Jeeves direct search method for performing the multivariable optimization. Our purpose is to ensure transferring the circuit between usable fabrication technologies and preserving its functional properties. The colour space converter is treated as the case study for performance evaluation of the proposed tool in cooperation with HSPICE simulation software. The original CMOS technology files for Taiwan semiconductor (TSMC) plant were utilized for the research. The automated design migration from 180 nm into 90 nm resulted with obtaining compact IC layout characterized by a smaller area and lower power consumption. The paper is concluded with a brief summary that proves the usability of the proposed tool in designing CMOS cells dedicated for low power image processing.

  3. Integrated pressure-sensing microsystem by CMOS IC technology for barometal applications

    NASA Astrophysics Data System (ADS)

    Zhou, Minxin; Huang, Qing-An

    2001-10-01

    Most currently integrated silicon microsystems available for pressure sensing are based on preprocessing before CMOS IC technology. These microsystems are generally very sensitive to parasitism effect and not available for IC-compatible process. This limits the accuracy of the microsystem and batch-fabrication. Calibration cost is also increased. To overcome these problems, a new generation of pressure microsystems without preprocessing CMOS IC technology has been proposed. This pressure-sensing system consists of a miniature silicon capacitive sensor, fabricated with silicon-silicon bonding technique, and a detection integrated circuit. Only the standard layers of CMOS process are used to build the system and only several photolithography steps are necessary to achieve the micromachined structure in postprocessing, so a high long-term stability could be assured. The entire system converts absolute pressure changes, in the pressure range useful for barometal applications, to frequency changes. A reference capacitor is used in the system and a (delta) C model is applied to cancel out temperature dependence and to compensate non-linearity. The pressure range of the sensor is from 0.5 bar to 1.5bar and the temperature varies between -25 degree(s)C and -60 degree(s)C. A sensitivity of 50Hz/Torr could be achieved.

  4. Spin blockade in a triple silicon quantum dot in CMOS technology

    NASA Astrophysics Data System (ADS)

    Prati, E.; Petretto, G.; Belli, M.; Mazzeo, G.; Cocco, S.; de Michielis, M.; Fanciulli, M.; Guagliardo, F.; Vinet, M.; Wacquez, R.

    2012-02-01

    We study the spin blockade (SB) phenomenon by quantum transport in a triple quantum dot made of two single electron transistors (SET) on a CMOS platform separated by an implanted multiple donor quantum dot [1]. Spin blockade condition [2] has been used in the past to realize single spin localization and manipulation in GaAs quantum dots [3]. Here, we reproduce the same physics in a CMOS preindustrial silicon quantum device. Single electron quantum dots are connected via an implanted quantum dot and exhibit SB in one current direction. We break the spin blockade by applying a magnetic field of few tesla. Our experimental results are explained by a theoretical microscopic scheme supported by simulations in which only some of the possible processes through the triple quantum dot are spin blocked, according to the asymmetry of the coupling capacitances with the control gates and the central dot. Depending on the spin state, the SB may be both lifted and induced. Spin control in CMOS quantum dots is a necessary condition to realize large fabrication of spin qubits in some solid state silicon quantum device architectures.[0pt] [1] Pierre et al., Appl. Phys. Lett., 95, 24, 242107 (2009); [2] Liu et al., Phys. Rev. B 77, 073310 (2008); [3] Koppens et al., Nature 442, 766-771 (2006)

  5. CMOS compatible on-chip decoupling capacitor based on vertically aligned carbon nanofibers

    NASA Astrophysics Data System (ADS)

    Saleem, A. M.; Göransson, G.; Desmaris, V.; Enoksson, P.

    2015-05-01

    On-chip decoupling capacitor of specific capacitance 55 pF/μm2 (footprint area) which is 10 times higher than the commercially available discrete and on-chip (65 nm technology node) decoupling capacitors is presented. The electrodes of the capacitor are based on vertically aligned carbon nanofibers (CNFs) capable of being integrated directly on CMOS chips. The carbon nanofibers employed in this study were grown on CMOS chips using direct current plasma enhanced chemical vapor deposition (DC-PECVD) technique at CMOS compatible temperature. The carbon nanofibers were grown at temperature from 390 °C to 550 °C. The capacitance of the carbon nanofibers was measured by cyclic voltammetry and thus compared. Futhermore the capacitance of decoupling capacitor was measured using different voltage scan rate to show their high charge storage capability and finally the cyclic voltammetry is run for 1000 cycles to assess their suitability as electrode material for decoupling capacitor. Our results show the high specific capacitance and long-term reliability of performance of the on-chip decoupling capacitors. Moreover, the specific capacitance shown is larger for carbon nanofibers grown at higher temperature.

  6. Low voltage surface transverse wave oscillators for the next generation CMOS technology.

    PubMed

    Avramov, Ivan D

    2005-08-01

    The design and performance of voltage controlled surface transverse wave oscillators (VCSTWO) in the lower gigahertz frequency range, operating on supply and tuning voltages in the 1.2 to 3.3 V range, and suitable for direct interfacing with the next generation CMOS circuits are presented. By applying the "boost" principle, as used in direct current (DC)-DC converters, to the design of the sustaining amplifier, the VCSTWO outputs are switched between 0 V and a positive peak value, exceeding the supply voltage Us, to provide safe CMOS-circuit switching while keeping the radio frequency (RF)/DC efficiency to a maximum for low DC power consumption. The investigated 1.0 and 2.5 GHz VCSTWO are varactor tuned feedback-loop oscillators stabilized with two-port surface transverse wave (STW) resonators. Each VCSTWO has a DC-coupled, high-impedance switched output to drive the CMOS circuit directly, and an additional sinusoidal 50 ohmz high-power reference output available for other low-noise system applications. Phase noise levels in the -103 to -115 dBc/Hz range at 1 kHz carrier offset are achieved with 1.0 GHz VCSTWO at a RF/DC efficiency in the 21 to 29% range. The 2.5 GHz prototypes demonstrate phase noise levels in the -97 to -102 dBc/Hz range at 1 kHz carrier offset, and efficiencies range between 8 and 15%. PMID:16245594

  7. Sustained attention in skilled and novice martial arts athletes: a study of event-related potentials and current sources

    PubMed Central

    Sanchez-Lopez, Javier; Silva-Pereyra, Juan

    2016-01-01

    Background. Research on sports has revealed that behavioral responses and event-related brain potentials (ERP) are better in expert than in novice athletes for sport-related tasks. Focused attention is essential for optimal athletic performance across different sports but mainly in combat disciplines. During combat, long periods of focused attention (i.e., sustained attention) are required for a good performance. Few investigations have reported effects of expertise on brain electrical activity and its neural generators during sport-unrelated attention tasks. The aim of the present study was to assess the effect of expertise (i.e., skilled and novice martial arts athletes) analyzing the ERP during a sustained attention task (Continuous Performance Task; CPT) and the cortical three-dimensional distribution of current density, using the sLORETA technique. Methods. CPT consisted in an oddball-type paradigm presentation of five stimuli (different pointing arrows) where only one of them (an arrow pointing up right) required a motor response (i.e., target). CPT was administered to skilled and novice martial arts athletes while EEG were recorded. Amplitude ERP data from target and non-target stimuli were compared between groups. Subsequently, current source analysis for each ERP component was performed on each subject. sLORETA images were compared by condition and group using Statistical Non-Parametric Mapping analysis. Results. Skilled athletes showed significant amplitude differences between target and non-target conditions in early ERP components (P100 and P200) as opposed to the novice group; however, skilled athletes showed no significant effect of condition in N200 but novices did show a significant effect. Current source analysis showed greater differences in activations in skilled compared with novice athletes between conditions in the frontal (mainly in the Superior Frontal Gyrus and Medial Frontal Gyrus) and limbic (mainly in the Anterior Cingulate Gyrus) lobes

  8. Sustained attention in skilled and novice martial arts athletes: a study of event-related potentials and current sources.

    PubMed

    Sanchez-Lopez, Javier; Silva-Pereyra, Juan; Fernandez, Thalia

    2016-01-01

    Background. Research on sports has revealed that behavioral responses and event-related brain potentials (ERP) are better in expert than in novice athletes for sport-related tasks. Focused attention is essential for optimal athletic performance across different sports but mainly in combat disciplines. During combat, long periods of focused attention (i.e., sustained attention) are required for a good performance. Few investigations have reported effects of expertise on brain electrical activity and its neural generators during sport-unrelated attention tasks. The aim of the present study was to assess the effect of expertise (i.e., skilled and novice martial arts athletes) analyzing the ERP during a sustained attention task (Continuous Performance Task; CPT) and the cortical three-dimensional distribution of current density, using the sLORETA technique. Methods. CPT consisted in an oddball-type paradigm presentation of five stimuli (different pointing arrows) where only one of them (an arrow pointing up right) required a motor response (i.e., target). CPT was administered to skilled and novice martial arts athletes while EEG were recorded. Amplitude ERP data from target and non-target stimuli were compared between groups. Subsequently, current source analysis for each ERP component was performed on each subject. sLORETA images were compared by condition and group using Statistical Non-Parametric Mapping analysis. Results. Skilled athletes showed significant amplitude differences between target and non-target conditions in early ERP components (P100 and P200) as opposed to the novice group; however, skilled athletes showed no significant effect of condition in N200 but novices did show a significant effect. Current source analysis showed greater differences in activations in skilled compared with novice athletes between conditions in the frontal (mainly in the Superior Frontal Gyrus and Medial Frontal Gyrus) and limbic (mainly in the Anterior Cingulate Gyrus) lobes

  9. System-in Package of Integrated Humidity Sensor Using CMOS-MEMS Technology.

    PubMed

    Lee, Sung Pil

    2015-10-01

    Temperature/humidity microchips with micropump were fabricated using a CMOS-MEMS process and combined with ZigBee modules to implement a sensor system in package (SIP) for a ubiquitous sensor network (USN) and/or a wireless communication system. The current of a diode temperature sensor to temperature and a normalized current of FET humidity sensor to relative humidity showed linear characteristics, respectively, and the use of the micropump has enabled a faster response. A wireless reception module using the same protocol as that in transmission systems processed the received data within 10 m and showed temperature and humidity values in the display. PMID:26726359

  10. Current Background Noise Sources and Levels in the NASA Ames 40- by 80-Foot Wind Tunnel: A Status Report

    NASA Technical Reports Server (NTRS)

    Allen, Christopher S.; Jaeger, Stephen; Soderman, Paul; Koga, Dennis (Technical Monitor)

    1999-01-01

    Background noise measurements were made of the acoustic environment in the National Full-Scale Aerodynamics Complex 40- by 80-Foot Wind Tunnel (40x80) at NASA Ames Research Center. The measurements were acquired subsequent to the 40x80 Aeroacoustic Modernization Project, which was undertaken to improve the anechoic characteristics of the 40x80's closed test section as well as reduce the levels of background noise in the facility. The resulting 40x80 anechoic environment was described by Soderman et. al., and the current paper describes the resulting 40x80 background noise, discusses the sources of the noise, and draws comparisons to previous 40x80 background noise levels measurements. At low wind speeds or low frequencies, the 40x80 background noise is dominated by the fan drive system. To obtain the lowest fan drive noise for a given tunnel condition, it is possible in the 40x80 to reduce the fans' rotational speed and adjust the fans' blade pitch, as described by Schmidtz et. al. This idea is not new, but has now been operationally implemented with modifications for increased power at low rotational speeds. At low to mid-frequencies and at higher wind speeds, the dominant noise mechanism was thought to be caused by the surface interface of the previous test section floor acoustic lining. In order to reduce this noise mechanism, the new test section floor lining was designed to resist the pumping of flow in and out of the space between the grating slats required to support heavy equipment. In addition, the lining/flow interface over the entire test section was designed to be smoother and quieter than the previous design. At high wind speeds or high frequencies, the dominant source of background noise in the 40x80 is believed to be caused by the response of the in-flow microphone probes (required by the nature of the closed test section) to the fluctuations in the freestream flow. The resulting background noise levels are also different for probes of various

  11. A safety monitoring system for taxi based on CMOS imager

    NASA Astrophysics Data System (ADS)

    Liu, Zhi

    2005-01-01

    CMOS image sensors now become increasingly competitive with respect to their CCD counterparts, while adding advantages such as no blooming, simpler driving requirements and the potential of on-chip integration of sensor, analogue circuitry, and digital processing functions. A safety monitoring system for taxi based on cmos imager that can record field situation when unusual circumstance happened is described in this paper. The monitoring system is based on a CMOS imager (OV7120), which can output digital image data through parallel pixel data port. The system consists of a CMOS image sensor, a large capacity NAND FLASH ROM, a USB interface chip and a micro controller (AT90S8515). The structure of whole system and the test data is discussed and analyzed in detail.

  12. Tests of commercial colour CMOS cameras for astronomical applications

    NASA Astrophysics Data System (ADS)

    Pokhvala, S. M.; Reshetnyk, V. M.; Zhilyaev, B. E.

    2013-12-01

    We present some results of testing commercial colour CMOS cameras for astronomical applications. Colour CMOS sensors allow to perform photometry in three filters simultaneously that gives a great advantage compared with monochrome CCD detectors. The Bayer BGR colour system realized in colour CMOS sensors is close to the astronomical Johnson BVR system. The basic camera characteristics: read noise (e^{-}/pix), thermal noise (e^{-}/pix/sec) and electronic gain (e^{-}/ADU) for the commercial digital camera Canon 5D MarkIII are presented. We give the same characteristics for the scientific high performance cooled CCD camera system ALTA E47. Comparing results for tests of Canon 5D MarkIII and CCD ALTA E47 show that present-day commercial colour CMOS cameras can seriously compete with the scientific CCD cameras in deep astronomical imaging.

  13. High-speed multicolour photometry with CMOS cameras

    NASA Astrophysics Data System (ADS)

    Pokhvala, S. M.; Zhilyaev, B. E.; Reshetnyk, V. M.

    2012-11-01

    We present the results of testing the commercial digital camera Nikon D90 with a CMOS sensor for high-speed photometry with a small telescope Celestron 11'' at the Peak Terskol Observatory. CMOS sensor allows to perform photometry in 3 filters simultaneously that gives a great advantage compared with monochrome CCD detectors. The Bayer BGR colour system of CMOS sensors is close to the Johnson BVR system. The results of testing show that one can carry out photometric measurements with CMOS cameras for stars with the V-magnitude up to ≃14^{m} with the precision of 0.01^{m}. Stars with the V-magnitude up to ˜10 can be shot at 24 frames per second in the video mode.

  14. Depleted CMOS pixels for LHC proton-proton experiments

    NASA Astrophysics Data System (ADS)

    Wermes, N.

    2016-07-01

    While so far monolithic pixel detectors have remained in the realm of comparatively low rate and radiation applications outside LHC, new developments exploiting high resistivity substrates with three or four well CMOS process options allow reasonably large depletion depths and full CMOS circuitry in a monolithic structure. This opens up the possibility to target CMOS pixel detectors also for high radiation pp-experiments at the LHC upgrade, either in a hybrid-type fashion or even fully monolithic. Several pixel matrices have been prototyped with high ohmic substrates, high voltage options, and full CMOS electronics. They were characterized in the lab and in test beams. An overview of the necessary development steps and different approaches as well as prototype results are presented in this paper.

  15. CMOS Active Pixel Sensor Technology and Reliability Characterization Methodology

    NASA Technical Reports Server (NTRS)

    Chen, Yuan; Guertin, Steven M.; Pain, Bedabrata; Kayaii, Sammy

    2006-01-01

    This paper describes the technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor. Both overall chip reliability and pixel reliability are projected for the imagers.

  16. Design and image-quality performance of high resolution CMOS-based X-ray imaging detectors for digital mammography

    NASA Astrophysics Data System (ADS)

    Cha, B. K.; Kim, J. Y.; Kim, Y. J.; Yun, S.; Cho, G.; Kim, H. K.; Seo, C.-W.; Jeon, S.; Huh, Y.

    2012-04-01

    In digital X-ray imaging systems, X-ray imaging detectors based on scintillating screens with electronic devices such as charge-coupled devices (CCDs), thin-film transistors (TFT), complementary metal oxide semiconductor (CMOS) flat panel imagers have been introduced for general radiography, dental, mammography and non-destructive testing (NDT) applications. Recently, a large-area CMOS active-pixel sensor (APS) in combination with scintillation films has been widely used in a variety of digital X-ray imaging applications. We employed a scintillator-based CMOS APS image sensor for high-resolution mammography. In this work, both powder-type Gd2O2S:Tb and a columnar structured CsI:Tl scintillation screens with various thicknesses were fabricated and used as materials to convert X-ray into visible light. These scintillating screens were directly coupled to a CMOS flat panel imager with a 25 × 50 mm2 active area and a 48 μm pixel pitch for high spatial resolution acquisition. We used a W/Al mammographic X-ray source with a 30 kVp energy condition. The imaging characterization of the X-ray detector was measured and analyzed in terms of linearity in incident X-ray dose, modulation transfer function (MTF), noise-power spectrum (NPS) and detective quantum efficiency (DQE).

  17. CMOS monolithic pixel sensors research and development at LBNL

    NASA Astrophysics Data System (ADS)

    Contarato, D.; Bussat, J.-M.; Denes, P.; Greiner, L.; Kim, T.; Stezelberger, T.; Wieman, H.; Battaglia, M.; Hooberman, B.; Tompkins, L.

    2007-12-01

    This paper summarizes the recent progress in the design and characterization of CMOS pixel sensors at LBNL. Results of lab tests, beam tests and radiation hardness tests carried out at LBNL on a test structure with pixels of various sizes are reported. The first results of the characterization of back-thinned CMOS pixel sensors are also reported, and future plans and activities are discussed.

  18. Delta Doping High Purity CCDs and CMOS for LSST

    NASA Technical Reports Server (NTRS)

    Blacksberg, Jordana; Nikzad, Shouleh; Hoenk, Michael; Elliott, S. Tom; Bebek, Chris; Holland, Steve; Kolbe, Bill

    2006-01-01

    A viewgraph presentation describing delta doping high purity CCD's and CMOS for LSST is shown. The topics include: 1) Overview of JPL s versatile back-surface process for CCDs and CMOS; 2) Application to SNAP and ORION missions; 3) Delta doping as a back-surface electrode for fully depleted LBNL CCDs; 4) Delta doping high purity CCDs for SNAP and ORION; 5) JPL CMP thinning process development; and 6) Antireflection coating process development.

  19. CMOS front end electronics for the ATLAS muon detector

    SciTech Connect

    Huth, J.; Oliver, J.; Hazen, E.; Shank, J.

    1997-12-31

    An all-CMOS design for an integrated ASD (Amplifier-Shaper-Discriminator) chip for readout of the ATLAS Monitored Drift Tubes (MDTs) is presented. Eight channels of charge-sensitive preamp, two-stage pole/zero shaper, Wilkinson ADC and discriminator with programmable hysteresis are integrated on a single IC. Key elements have been prototyped in 1.2 and 0.5 micron CMOS operating at 5V and 3.3V respectively.

  20. CMOS Image Sensors: Electronic Camera On A Chip

    NASA Technical Reports Server (NTRS)

    Fossum, E. R.

    1995-01-01

    Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.