The effect of band Jahn-Teller distortion on the magnetoresistivity of manganites: a model study.

PubMed

Rout, G C; Panda, Saswati; Behera, S N

2011-10-05

We present a model study of magnetoresistance through the interplay of magnetisation, structural distortion and external magnetic field for the manganite systems. The manganite system is described by the Hamiltonian which consists of the s-d type double exchange interaction, Heisenberg spin-spin interaction among the core electrons, and the static and dynamic band Jahn-Teller (JT) interaction in the e(g) band. The relaxation time of the e(g) electron is found from the imaginary part of the Green's function using the total Hamiltonian consisting of the interactions due to the electron and phonon. The calculated resistivity exhibits a peak in the pure JT distorted insulating phase separating the low temperature metallic ferromagnetic phase and the high temperature paramagnetic phase. The resistivity is suppressed with the increase of the external magnetic field. The e(g) electron band splitting and its effect on magnetoresistivity is reported here. © 2011 IOP Publishing Ltd

A tight binding model study of tunneling conductance spectra of spin and orbitally ordered CMR manganites

NASA Astrophysics Data System (ADS)

Panda, Saswati; Sahoo, D. D.; Rout, G. C.

2018-04-01

We report here a tight binding model for colossal magnetoresistive (CMR) manganites to study the pseudo gap (PG) behavior near Fermi level. In the Kubo-Ohata type DE model, we consider first and second nearest neighbor interactions for transverse spin fluctuations in core band and hopping integrals in conduction band, in the presence of static band Jahn-Teller distortion. The model Hamiltonian is solved using Zubarev's Green's function technique. The electron density of states (DOS) is found out from the Green's functions. We observe clear PG near Fermi level in the electron DOS.

Ferromagnetic domain behavior and phase transition in bilayer manganites investigated at the nanoscale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phatak, C.; Petford-Long, A. K.; Zheng, H.

Understanding the underlying mechanism and phenomenology of colossal magnetoresistance in manganites has largely focused on atomic and nanoscale physics such as double exchange, phase separation, and charge order. Here in this article, we consider a more macroscopic view of manganite materials physics, reporting on the ferromagnetic domain behavior in a bilayer manganite sample with a nominal composition of La 2-2xSr 1+2xMn 2O 7 with x = 0:38, studied using in-situ Lorentz transmission electron microscopy. The role of magnetocrystalline anisotropy on the structure of domain walls was elucidated. On cooling, magnetic domain contrast was seen to appear first at the Curiemore » temperature within the a - b plane. With further reduction in temperature, the change in area fraction of magnetic domains was used to estimate the critical exponent describing the ferromagntic phase transition. Lastly, the ferromagnetic phase transition was accompanied by a distinctive nanoscale granular contrast close to the Curie temperature, which we infer to be related to the presence of ferromagnetic nanoclusters in a paramagnetic matrix, which has not yet been reported in bilayer manganites.« less

Ferromagnetic domain behavior and phase transition in bilayer manganites investigated at the nanoscale

DOE PAGES

Phatak, C.; Petford-Long, A. K.; Zheng, H.; ...

2015-12-14

Understanding the underlying mechanism and phenomenology of colossal magnetoresistance in manganites has largely focused on atomic and nanoscale physics such as double exchange, phase separation, and charge order. Here in this article, we consider a more macroscopic view of manganite materials physics, reporting on the ferromagnetic domain behavior in a bilayer manganite sample with a nominal composition of La 2-2xSr 1+2xMn 2O 7 with x = 0:38, studied using in-situ Lorentz transmission electron microscopy. The role of magnetocrystalline anisotropy on the structure of domain walls was elucidated. On cooling, magnetic domain contrast was seen to appear first at the Curiemore » temperature within the a - b plane. With further reduction in temperature, the change in area fraction of magnetic domains was used to estimate the critical exponent describing the ferromagntic phase transition. Lastly, the ferromagnetic phase transition was accompanied by a distinctive nanoscale granular contrast close to the Curie temperature, which we infer to be related to the presence of ferromagnetic nanoclusters in a paramagnetic matrix, which has not yet been reported in bilayer manganites.« less

Tunnelling magnetoresistance and 1/f noise in phase-separated manganites

NASA Astrophysics Data System (ADS)

Sboychakov, A. O.; Rakhmanov, A. L.; Kugel, K. I.; Kagan, M. Yu; Brodsky, I. V.

2003-03-01

The magnetoresistance and the noise power of non-metallic phase-separated manganites are studied. The material is modelled by a system of small ferromagnetic metallic droplets (magnetic polarons or ferrons) in an insulating matrix. The concentration of metallic phase is assumed to be far from the percolation threshold. The electron tunnelling between ferrons causes the charge transfer in such a system. The magnetoresistance is determined both by the increase in the volume of the metallic phase and by the change in the electron hopping probability. In the framework of such a model, the low-field magnetoresistance is proportional to H2 and decreases with temperature as T-n, where n can vary from 1 to 5, depending on the parameters of the system. In the high-field limit, the tunnelling magnetoresistance grows exponentially. Different mechanisms of the voltage fluctuations in the system are analysed. The noise spectrum generated by the fluctuations of the number of droplets with extra electrons has a 1/f form over a wide frequency range. In the case of strong magnetic anisotropy, the 1/f noise can also arise due to fluctuations of the magnetic moments of ferrons. The 1/f noise power depends only slightly on the magnetic field in the low field range whereas it can increase as H6 in the high-field limit.

Temperature- and Bias-Dependence of Magnetoresistance in Doped Manganite Thin Film Trilayer Junctions

NASA Astrophysics Data System (ADS)

Sun, J. Z.; Xiao, Gang

1998-03-01

Large low-field magnetoresistance, up to a factor of five change in resistance, was observed in trilayer junctions formed by epitaxial thin films of La_0.67Sr_0.33 MnO3 - SrTiO3 - La_0.67Sr_0.33MnO3 at 4.2K and 100 Oe. Such magnetoresistance decreases with increasing sample temperature, and disappears for temperatures above 150K. The magnetoresistance also decreases upon increasing bias voltage across the junction. We present systematic experimental studies of both temperature and bias-dependence. These results in manganite trilayer junctions at low temperatures are similar to what has been observed in metallic trilayer magnetic tunneling valves, and are qualitatively consistent with the interface magnon excitation model proposed by Zhang et al.(S. Zhang, P. M. Levy, A. C. Marley and S. S. P. Parkin, Phys. Rev. Lett. 79), 3744 (1997).

Spin Seebeck effect and thermal colossal magnetoresistance in Christmas-tree silicene nanoribbons

NASA Astrophysics Data System (ADS)

Gao, Xiu-Jin; Zhao, Peng; Chen, Gang

2018-05-01

Based on the density functional theory and nonequilibrium Green's function method, we investigate the electronic structures and thermal spin transport properties of Christmas-tree silicene nanoribbons (CSiNRs). The results show that CSiNRs have ferromagnetic ground state with high Curie temperature far above the room temperature. Obvious spin Seebeck effect with spin-up and spin-down currents flowing in opposite directions by a temperature gradient can be observed in these systems. Furthermore, a thermal colossal magnetoresistance up to 109% can be realized by tuning the external magnetic field. The results show that CSiNRs hold great potential in designing spin caloritronic devices.

Phase separation of electrons strongly coupled with phonons in cuprates and manganites

NASA Astrophysics Data System (ADS)

Alexandrov, Sasha

2009-03-01

Recent advanced Monte Carlo simulations have not found superconductivity and phase separation in the Hubbard model with on-site repulsive electron-electron correlations. I argue that microscopic phase separations in cuprate superconductors and colossal magnetoresistance (CMR) manganites originate from a strong electron-phonon interaction (EPI) combined with unavoidable disorder. Attractive electron correlations, caused by an almost unretarded EPI, are sufficient to overcome the direct inter-site Coulomb repulsion in these charge-transfer Mott-Hubbard insulators, so that low energy physics is that of small polarons and small bipolarons. They form clusters localized by disorder below the mobility edge, but propagate as the Bloch states above the mobility edge. I identify the Froehlich EPI as the most essential for pairing and phase separation in superconducting layered cuprates. The pairing of oxygen holes into heavy bipolarons in the paramagnetic phase (current-carrier density collapse (CCDC)) explains also CMR and high and low-resistance phase coexistence near the ferromagnetic transition of doped manganites.

Spin Seebeck Effect and Thermal Colossal Magnetoresistance in Graphene Nanoribbon Heterojunction

PubMed Central

Ni, Yun; Yao, Kailun; Fu, Huahua; Gao, Guoying; Zhu, Sicong; Wang, Shuling

2013-01-01

Spin caloritronics devices are very important for future development of low-power-consumption technology. We propose a new spin caloritronics device based on zigzag graphene nanoribbon (ZGNR), which is a heterojunction consisting of single-hydrogen-terminated ZGNR (ZGNR-H) and double-hydrogen-terminated ZGNR (ZGNR-H2). We predict that spin-up and spin-down currents flowing in opposite directions can be induced by temperature difference instead of external electrical bias. The thermal spin-up current is considerably large and greatly improved compared with previous work in graphene. Moreover, the thermal colossal magnetoresistance is obtained in our research, which could be used to fabricate highly-efficient spin caloritronics MR devices. PMID:23459307

Origin of the colossal dielectric response of Pr0.6 Ca0.4 Mn O3

NASA Astrophysics Data System (ADS)

Biškup, N.; de Andrés, A.; Martinez, J. L.; Perca, C.

2005-07-01

We report the detailed study of dielectric response of Pr0.6Ca0.4MnO3 (PCMO), a member of the manganite family showing colossal magnetoresistance. Measurements have been performed on four polycrystalline samples and four single crystals, allowing us to compare and extract the essence of dielectric response in the material. High-frequency dielectric function is found to be ɛHF=30 , as expected for the perovskite material. Dielectric relaxation is found in the frequency window of 20Hzto1MHz at temperatures of 50-200K that yields to colossal low-frequency dielectric function, i.e., the static dielectric constant. The static dielectric constant is always colossal, but varies considerably in different samples from ɛ(0)=103to105 . The measured data can be simulated very well by blocking (surface barrier) capacitance in series with sample resistance. This indicates that the large dielectric constant in PCMO arises from the Schottky barriers at electrical contacts. Measurements in magnetic field and with dc bias support this interpretation. Colossal magnetocapacitance observed in the title compound is thus attributed to extrinsic effects. Weak anomaly at the charge ordering temperature can also be attributed to interplay of sample and contact resistance. We comment on our results in the framework of related studies by other groups.

Investigation of magnetic transitions through ultrasonic measurements in double-layered CMR manganite La1.2Sr1.8Mn2O7

NASA Astrophysics Data System (ADS)

Reddy, Y. S.; Vishnuvardhan Reddy, C.

2014-03-01

A polycrystalline, double-layered, colossal magnetoresistive manganite La1.2Sr1.8Mn2O7 is synthesized by sol-gel process and its magnetic and ultrasonic properties were investigated in the temperature range 80-300 K. The sample has Curie temperature at 124 K, where the sample exhibits a transition from paramagnetic insulator to ferromagnetic metallic state. The longitudinal sound velocity measurements show a significant hardening of sound velocity below TC, which may be attributed to the coupling between ferromagnetic spins and longitudinal acoustic phonons. The magnetization and ultrasonic studies reveal the presence of secondary transition at ≈ 260 K in this sample. The present sound velocity measurement results confirm the reliability of ultrasonic investigations as an independent tool to probe magnetic transitions in manganites.

Bending and breaking of stripes in a charge ordered manganite.

PubMed

Savitzky, Benjamin H; El Baggari, Ismail; Admasu, Alemayehu S; Kim, Jaewook; Cheong, Sang-Wook; Hovden, Robert; Kourkoutis, Lena F

2017-12-01

In charge-ordered phases, broken translational symmetry emerges from couplings between charge, spin, lattice, or orbital degrees of freedom, giving rise to remarkable phenomena such as colossal magnetoresistance and metal-insulator transitions. The role of the lattice in charge-ordered states remains particularly enigmatic, soliciting characterization of the microscopic lattice behavior. Here we directly map picometer scale periodic lattice displacements at individual atomic columns in the room temperature charge-ordered manganite Bi 0.35 Sr 0.18 Ca 0.47 MnO 3 using aberration-corrected scanning transmission electron microscopy. We measure transverse, displacive lattice modulations of the cations, distinct from existing manganite charge-order models. We reveal locally unidirectional striped domains as small as ~5 nm, despite apparent bidirectionality over larger length scales. Further, we observe a direct link between disorder in one lattice modulation, in the form of dislocations and shear deformations, and nascent order in the perpendicular modulation. By examining the defects and symmetries of periodic lattice displacements near the charge ordering phase transition, we directly visualize the local competition underpinning spatial heterogeneity in a complex oxide.

Anomalously large anisotropic magnetoresistance in a perovskite manganite

PubMed Central

Li, Run-Wei; Wang, Huabing; Wang, Xuewen; Yu, X. Z.; Matsui, Y.; Cheng, Zhao-Hua; Shen, Bao-Gen; Plummer, E. Ward; Zhang, Jiandi

2009-01-01

The signature of correlated electron materials (CEMs) is the coupling between spin, charge, orbital and lattice resulting in exotic functionality. This complexity is directly responsible for their tunability. We demonstrate here that the broken symmetry, through cubic to orthorhombic distortion in the lattice structure in a prototype manganite single crystal, La0.69Ca0.31MnO3, leads to an anisotropic magneto-elastic response to an external field, and consequently to remarkable magneto-transport behavior. An anomalous anisotropic magnetoresistance (AMR) effect occurs close to the metal-insulator transition (MIT) in the system, showing a direct correlation with the anisotropic field-tuned MIT in the system and can be understood by means of a simple phenomenological model. A small crystalline anisotropy stimulates a “colossal” AMR near the MIT phase boundary of the system, thus revealing the intimate interplay between magneto- and electronic-crystalline couplings. PMID:19706504

Electronic band structure study of colossal magnetoresistance in Tl 2Mn 2O 7

NASA Astrophysics Data System (ADS)

Seo, D.-K.; Whangbo, M.-H.; Subramanian, M. A.

1997-02-01

The electronic structure of Tl 2Mn 2O 7 was examined by performing tight binding band calculations. The overlap between the Mn t 2g- and Tl 6 s-block bands results in a partial filling of the Tl 6 s-block bands. The associated Fermi surface consists of 12 cigar-shape electron pockets with each electron pocket about {1}/{1000} of the first Brillouin zone in size. The Tl 6 s-block bands have orbital contributions from the Mn atoms, and the carrier density is very low. These are important for the occurrence of a colossal magnetoresistance in Tl 2Mn 2O 7.

Theoretical study of the Raman active CDW gap mode in manganites.

PubMed

Rout, G C; Panda, Saswati; Behera, S N

2010-09-22

We report here the microscopic theory of the Raman spectra of the colossal magnetoresistive (CMR) manganite systems. The system is described by a model Hamiltonian consisting of the double exchange interaction in addition to the charge ordering interaction in the e(g) band and spin-spin interaction among the t(2g) core electrons. Further the phonon coupling to the conduction electron density is incorporated in the model for phonons in the harmonic approximation. The spectral density function for the Raman spectra is calculated from the imaginary part of the phonon Green's function. The calculated spectra display the Raman active bare phonon peak along with the charge ordering peak. The magnetic field and temperature dependence of the charge ordering peak agrees with the 480 cm(-1) JT mode observed in the experiments. The evolution of this mode is investigated in the report.

Charge dynamics in the colossal magnetoresistance pyrochlore Tl2Mn2O7

NASA Astrophysics Data System (ADS)

Okamura, H.; Koretsune, T.; Matsunami, M.; Kimura, S.; Nanba, T.; Imai, H.; Shimakawa, Y.; Kubo, Y.

2001-11-01

Optical conductivity data [σ(ω)] of the colossal magnetoresistance (CMR) pyrochlore Tl2Mn2O7 are presented as functions of temperature (T) and external magnetic field (B). Upon cooling and upon applying B near the Curie temperature, where the CMR manifests itself, σ(ω) shows a clear transition from an insulatorlike to a metallic electronic structure as evidenced by the emergence of a pronounced Drude-like component below ~0.2 eV. Analyses on the σ(ω) spectra show that both T- and B-induced evolutions of the electronic structure are very similar to each other, and that they are universally related to the development of macroscopic magnetization (M). In particular, the effective carrier density obtained from σ(ω) scales with M2 over wide ranges of T and B. The contributions to the CMR from the carrier effective mass and scattering time are also evaluated from the data.

A model study of tunneling conductance spectra of ferromagnetically ordered manganites

NASA Astrophysics Data System (ADS)

Panda, Saswati; Kar, J. K.; Rout, G. C.

2018-02-01

We report here the interplay of ferromagnetism (FM) and charge density wave (CDW) in manganese oxide systems through the study of tunneling conductance spectra. The model Hamiltonian consists of strong Heisenberg coupling in core t2g band electrons within mean-field approximation giving rise to ferromagnetism. Ferromagnetism is induced in the itinerant eg electrons due to Kubo-Ohata type double exchange (DE) interaction among the t2g and eg electrons. The charge ordering (CO) present in the eg band giving rise to CDW interaction is considered as the extra-mechanism to explain the colossal magnetoresistance (CMR) property of manganites. The magnetic and CDW order parameters are calculated using Zubarev's Green's function technique and solved self-consistently and numerically. The eg electron density of states (DOS) calculated from the imaginary part of the Green's function explains the experimentally observed tunneling conductance spectra. The DOS graph exhibits a parabolic gap near the Fermi energy as observed in tunneling conductance spectra experiments.

Colossal magnetoresistance accompanied with magnetorelaxor behavior in phase-separated Ca1-xCexMnO3 thin films and CaMnO3/Ca0.92Ce0.08MnO3 superlattices

NASA Astrophysics Data System (ADS)

Xiang, P.-H.; Yamada, H.; Sawa, A.; Akoh, H.

2010-03-01

We report on the transport properties of electron-doped manganite Ca1-xCexMnO3 (CCMO, 0≤x≤0.08) films and superlattices composed of insulating layers CaMnO3 (CMO) and Ca0.92Ce0.08MnO3 (CCMO8), deposited on nearly lattice-matched NdAlO3 substrates. The CCMO (x =0.06 and 0.07) films show colossal magnetoresistance (CMR) accompanied with magnetorelaxor behavior, which can be ascribed to the phase separation of canted G-type antiferromagnetic metal and C-type antiferromagnetic insulator. The (CMO)m/(CCMO8)n superlattices with 4≤m, n ≤8 (unit cells) resemble the solid-solution CCMO (x =0.06 and 0.07) films in CMR and magnetorelaxor behavior, suggesting that the phase separation takes place in the superlattices. The CMR and magnetorelaxor behavior of the (CMO)m/(CCMO8)n superlattices strongly depend on the thicknesses of constituent CMO and CCMO8 layers. The origin of the phase separation in the superlattices is discussed in terms of the charge transfer and the phase competition at the interfaces.

Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

DOEpatents

Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

2001-01-01

The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, J., E-mail: jaechun1@ualberta.ca; Alagoz, H. S.; Jung, J., E-mail: jjung@ualberta.ca

Colossal in-plane anisotropic magnetoresistance (AMR) of >16 000% has been engineered in spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} films. Recalling that typical AMR values in films are only a few percent, these results mark an astonishing increase that might potentially lead to fabrication of manganite-based switching and sensor devices. The unique colossal behavior is discussed within the context of anisotropic domain growth.

Quasi-Particle Relaxation and Quantum Femtosecond Magnetism in Non-Equilibrium Phases of Insulating Manganites

NASA Astrophysics Data System (ADS)

Perakis, Ilias; Kapetanakis, Myron; Lingos, Panagiotis; Barmparis, George; Patz, A.; Li, T.; Wang, Jigang

We study the role of spin quantum fluctuations driven by photoelectrons during 100fs photo-excitation of colossal magneto-resistive manganites in anti-ferromagnetic (AFM) charge-ordered insulating states with Jahn-Teller distortions. Our mean-field calculation of composite fermion excitations demonstrates that spin fluctuations reduce the energy gap by quasi-instantaneously deforming the AFM background, thus opening a conductive electronic pathway via FM correlation. We obtain two quasi-particle bands with distinct spin-charge dynamics and dependence on lattice distortions. To connect with fs-resolved spectroscopy experiments, we note the emergence of fs magnetization in the low-temperature magneto-optical signal, with threshold dependence on laser intensity characteristic of a photo-induced phase transition. Simultaneously, the differential reflectivity shows bi-exponential relaxation, with fs component, small at low intensity, exceeding ps component above threshold for fs AFM-to-FM switching. This suggests the emergence of a non-equilibrium metallic FM phase prior to establishment of a new lattice structure, linked with quantum magnetism via spin/charge/lattice couplings for weak magnetic fields.

A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

NASA Technical Reports Server (NTRS)

Liu, S. Q.; Wu, N. J.; Ignatiev, A.

2001-01-01

A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

Nature and evolution of incommensurate charge order in manganites visualized with cryogenic scanning transmission electron microscopy

PubMed Central

Savitzky, Benjamin H.; Admasu, Alemayehu S.; Kim, Jaewook; Cheong, Sang-Wook; Hovden, Robert; Kourkoutis, Lena F.

2018-01-01

Incommensurate charge order in hole-doped oxides is intertwined with exotic phenomena such as colossal magnetoresistance, high-temperature superconductivity, and electronic nematicity. Here, we map, at atomic resolution, the nature of incommensurate charge–lattice order in a manganite using scanning transmission electron microscopy at room temperature and cryogenic temperature (∼93 K). In diffraction, the ordering wave vector changes upon cooling, a behavior typically associated with incommensurate order. However, using real space measurements, we discover that the ordered state forms lattice-locked regions over a few wavelengths interspersed with phase defects and changing periodicity. The cations undergo picometer-scale (∼6 pm to 11 pm) transverse displacements, suggesting that charge–lattice coupling is strong. We further unearth phase inhomogeneity in the periodic lattice displacements at room temperature, and emergent phase coherence at 93 K. Such local phase variations govern the long-range correlations of the charge-ordered state and locally change the periodicity of the modulations, resulting in wave vector shifts in reciprocal space. These atomically resolved observations underscore the importance of lattice coupling and phase inhomogeneity, and provide a microscopic explanation for putative “incommensurate” order in hole-doped oxides. PMID:29382750

Magnetoresistance measurements in Ferro -- Antiferromagnetic bilayers based on the Ca-doped lanthanum manganite system

NASA Astrophysics Data System (ADS)

Gomez, M. E.; Marin, L.; Ramirez, G.; Prieto, P.

2011-03-01

We studied the isothermal magnetic field dependence of the resistance behavior in ferromagnetic--antiferromagnetic interface based on the Ca-doped lanthanum manganite system at temperatures below Neel temperature of the antiferromagnetic layer. We studied the influence of the thickness of the AF-layer, tAF , and F-layer, tF , on the ZFC and FC magnetoresistance (MR) in La 2/3 Ca 1/3 Mn O3 (tF) / La 1/3 Ca 2(3 Mn O3 (tAF) bilayers. HFC was 400 Oe and the applied magnetic field, H. We systematically varied the tF and tAF thickness, maintaining constant the total bilayer thickness (d = tF +tAF) . We found that MR has hysteretic behavior as observed in [ La 2/3 Ca 1/3 Mn O3 (tF) / La 1/3 Ca 2(3 Mn O3 (tAF) ]N superlattices, but; MR increases with the increasing field from H=0 to a maximum and then decreases continuously. This behavior also appears for negative fields in both ZFC and FC loops. The position and magnitude of the maximum is not symmetric with respect to the axis H=0. Work supported by CENM-COLCIENCIAS contract RC-0043-(2005).

Transport Properties and Magnetoresistance of La0.8Ca0.13Ag0.07MnO3 Perovskite Manganite Synthesized by Sol-Gel Method

NASA Astrophysics Data System (ADS)

Kurniawan, B.; Ruli, F.; Imaduddin, A.; Kamila, R.

2018-05-01

In this paper, we investigate the transport properties and magnetoresistance effect of La0.8Ca0.13Ag0.07MnO3 perovskite manganite synthesized by sol-gel method. The XRD pattern of the sample shows a rhombohedral perovskite structure with space group R3¯c. The EDX analysis confirms that the sample contains all expected chemical elements without any additional impurity. The temperature dependence of electrical resistivity was measured using a cryogenic magnetometer. The results show a metal-insulator transition temperature (TM-I ) at 280 K. The resistivity of the sample increases with an increase of temperature below TM-I . Theoretical analyses of the temperature dependence of resistivity suggest that the resistivity due to electron-electron scattering is predominant below TI-M. The resistivity of the sample decreases when applied magnetic field 1 T at a temperature range of 10 K to 300 K. The magnetoresistance of La0.8Ca0.13Ag0.07MnO3 emanates from spin-polarized tunneling process at the grain boundary.

Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers

PubMed Central

Stamopoulos, D.; Aristomenopoulou, E.

2015-01-01

Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent ‘on’ and ‘off’, thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis. PMID:26306543

A nanomagnetic study of phase transition in manganite thin films and ballistic magnetoresistance in magnetic nanocontacts

NASA Astrophysics Data System (ADS)

Chung, Seok-Hwan

This work focuses on two largely unexplored phenomena in micromagnetics: the temperature-driven paramagnetic insulator to ferromagnetic (FM) metallic phase transition in perovskite manganite and ballistic magnetoresistance in spin-polarized nanocontacts. To investigate the phase transition, an off-the-shelf commercial scanning force microscope was redesigned for operation at temperatures from 350 K to 100 K. This adaptation is elaborated in this thesis. Using this system, both ferromagnetic and charge-ordered domain structures of (La 1-xPrx)0.67Ca0.33MnO3 thin film were observed by magnetic force microscopy (MFM) and electric force microscopy (EFM) operated in the vicinity of the peak resistance temperature (Tp). Predominantly in-plane oriented FM domains of sub-micrometer size emerge below Tp and their local magnetic moment increased as the temperature is reduced. Charge-ordered insulating regions show a strong electrostatic interaction with an EFM tip at a few degrees above Tp and the interaction correlates well with the temperature dependence of resistivity of the film. Cross-correlation analysis between topography and magnetic structure on several substrates indicates FM domains form on the flat regions of the surface, while charge ordering occurs at surface protrusions. In the investigation of ballistic magnetoresistance, new results on half-metallic ferromagnets formed by atomic or nanometer contacts of CrO2-CrO 2 and CrO2-Ni are presented showing magnetoconductance as high as 400%. Analysis of the magnetoconductance versus conductance data for all materials known to exhibit so-called ballistic magnetoresistance strongly suggests that magnetoconductance of nanocontacts follows a universal mechanism. If the maximum magnetoconductance is normalized to unity and the conductance is scaled with the resistivity of the material, then all data points fall onto a universal curve independent of the contact material and the transport mechanism. The analysis has been

A-site cationic disorder induced significantly large magnetoresistance in polycrystalline La0.2Gd0.5Ba0.3MnO3 compound

NASA Astrophysics Data System (ADS)

Saha, Suvayan; Das, Kalipada; Bandyopadhyay, Sudipta; Das, I.

2017-11-01

The observation of significantly large magnetoresistance at the liquid nitrogen temperature range in the polycrystalline La0.2Gd0.5Ba0.3MnO3 (LGBMO) compound has been addressed in the present manuscript. The motivation of considering LGBMO sample is the average 'A' site ionic radius 〈rA 〉 and tolerance factor (t), almost same as that of La0.7Sr0.3MnO3 (LSMO), which is a well studied colossal magnetoresistive material. Magnetoresistance of the LGBMO compound has been compared with the LSMO as well as parent compound La0.7Ba0.3MnO3(LBMO) to show the enhancement of magnetoresistance in LGBMO compound. This observed nature has been elucidated considering the disorder induced short range magnetic interaction due to the enhance size disorder parameter (σ2). Our study revels that, size disorder parameter plays the crucial role for enhancing the colossal magnetoresistance.

Nature and evolution of incommensurate charge order in manganites visualized with cryogenic scanning transmission electron microscopy.

PubMed

El Baggari, Ismail; Savitzky, Benjamin H; Admasu, Alemayehu S; Kim, Jaewook; Cheong, Sang-Wook; Hovden, Robert; Kourkoutis, Lena F

2018-02-13

Incommensurate charge order in hole-doped oxides is intertwined with exotic phenomena such as colossal magnetoresistance, high-temperature superconductivity, and electronic nematicity. Here, we map, at atomic resolution, the nature of incommensurate charge-lattice order in a manganite using scanning transmission electron microscopy at room temperature and cryogenic temperature ([Formula: see text]93 K). In diffraction, the ordering wave vector changes upon cooling, a behavior typically associated with incommensurate order. However, using real space measurements, we discover that the ordered state forms lattice-locked regions over a few wavelengths interspersed with phase defects and changing periodicity. The cations undergo picometer-scale ([Formula: see text]6 pm to 11 pm) transverse displacements, suggesting that charge-lattice coupling is strong. We further unearth phase inhomogeneity in the periodic lattice displacements at room temperature, and emergent phase coherence at 93 K. Such local phase variations govern the long-range correlations of the charge-ordered state and locally change the periodicity of the modulations, resulting in wave vector shifts in reciprocal space. These atomically resolved observations underscore the importance of lattice coupling and phase inhomogeneity, and provide a microscopic explanation for putative "incommensurate" order in hole-doped oxides. Copyright © 2018 the Author(s). Published by PNAS.

Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films.

PubMed

Alejandro, G; Steren, L B; Pastoriza, H; Vega, D; Granada, M; Sánchez, J C Rojas; Sirena, M; Alascio, B

2010-09-01

The angular dependence of the magnetoresistance effect has been measured on bicrystalline La(0.75)Sr(0.25)MnO(3) films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

Unusual ferromagnetism enhancement in ferromagnetically optimal manganite La0.7−yCa0.3+yMn1−yRuyO3 (0≤y<0.3): the role of Mn-Ru t2g super-exchange

PubMed Central

Liu, M. F.; Du, Z. Z.; Xie, Y. L.; Li, X.; Yan, Z. B.; Liu, J. –M.

2015-01-01

The eg-orbital double-exchange mechanism as the core of physics of colossal magnetoresistance (CMR) manganites is well known, which usually covers up the role of super-exchange at the t2g-orbitals. The role of the double-exchange mechanism is maximized in La0.7Ca0.3MnO3, leading to the concurrent metal-insulator transition and ferromagnetic transition as well as CMR effect. In this work, by a set of synchronous Ru-substitution and Ca-substitution experiments on La0.7–yCa0.3+yMn1–yRuyO3, we demonstrate that the optimal ferromagnetism in La0.7Ca0.3MnO3 can be further enhanced. It is also found that the metal-insulator transition and magnetic transition can be separately modulated. By well-designed experimental schemes with which the Mn3+-Mn4+ double-exchange is damaged as weakly as possible, it is revealed that this ferromagnetism enhancement is attributed to the Mn-Ru t2g ferromagnetic super-exchange. The present work allows a platform on which the electro-transport and magnetism of rare-earth manganites can be controlled by means of the t2g-orbital physics of strongly correlated transition metal oxides. PMID:25909460

Composition dependence of charge and magnetic length scales in mixed valence manganite thin films

PubMed Central

Singh, Surendra; Freeland, J. W.; Fitzsimmons, M. R.; Jeen, H.; Biswas, A.

2016-01-01

Mixed-valence manganese oxides present striking properties like the colossal magnetoresistance, metal-insulator transition (MIT) that may result from coexistence of ferromagnetic, metallic and insulating phases. Percolation of such phase coexistence in the vicinity of MIT leads to first-order transition in these manganites. However the length scales over which the electronic and magnetic phases are separated across MIT which appears compelling for bulk systems has been elusive in (La1−yPry)1−xCaxMnO3 films. Here we show the in-plane length scale over which charge and magnetism are correlated in (La0.4Pr0.6)1−xCaxMnO3 films with x = 0.33 and 0.375, across the MIT temperature. We combine electrical transport (resistance) measurements, x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and specular/off-specular x-ray resonant magnetic scattering (XRMS) measurements as a function of temperature to elucidate relationships between electronic, magnetic and morphological structure of the thin films. Using off-specular XRMS we obtained the charge-charge and charge-magnetic correlation length of these LPCMO films across the MIT. We observed different charge-magnetic correlation length for two films which increases below the MIT. The different correlation length shown by two films may be responsible for different macroscopic (transport and magnetic) properties. PMID:27461993

Composition dependence of electronic, magnetic, transport and morphological properties of mixed valence manganite thin films

DOE PAGES

Singh, Surendra; Freeland, J. W.; Fitzsimmons, Michael R.; ...

2016-07-27

Mixed-valence manganese oxides present striking properties like the colossal magnetoresistance, metal-insulator transition (MIT) that may result from coexistence of ferromagnetic, metallic and insulating phases. Percolation of such phase coexistence in the vicinity of MIT leads to first-order transition in these manganites. However the length scales over which the electronic and magnetic phases are separated across MIT which appears compelling for bulk systems has been elusive in (La 1-yPr y) 1-xCaxMnO 3 films. Here we show the in-plane length scale over which charge and magnetism are correlated in (La 0.4Pr 0.6) 1-xCaxMnO3 films with x = 0.33 and 0.375, across themore » MIT temperature. We combine electrical transport (resistance) measurements, x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and specular/off-specular x-ray resonant magnetic scattering (XRMS) measurements as a function of temperature to elucidate relationships between electronic, magnetic and morphological structure of the thin films. Using off-specular XRMS we obtained the charge-charge and charge-magnetic correlation length of these LPCMO films across the MIT. We observed different charge-magnetic correlation length for two films which increases below the MIT. The different correlation length shown by two films may be responsible for different macroscopic (transport and magnetic) properties.« less

Unsaturated magnetoconductance of epitaxial La0.7Sr0.3MnO3 thin films in pulsed magnetic fields up to 60 T

NASA Astrophysics Data System (ADS)

Niu, Wei; Wang, Xuefeng; Gao, Ming; Xia, Zhengcai; Du, Jun; Nie, Yuefeng; Song, Fengqi; Xu, Yongbing; Zhang, Rong

2017-05-01

We report on the temperature and field dependence of resistance of La0.7Sr0.3MnO3 thin films over a wide temperature range and in pulsed magnetic fields up to 60 T. The epitaxial La0.7Sr0.3MnO3 thin films were deposited by laser molecular beam epitaxy. High magnetic field magnetoresistance curves were fitted by the Brillouin function, which indicated the existence of magnetically polarized regions and the underlying hopping mechanism. The unsaturated magnetoconductance was the most striking finding observed in pulsed magnetic fields up to 60 T. These observations can deepen the fundamental understanding of the colossal magnetoresistance in manganites with strong correlation of transport properties and magnetic ordering.

Nematic phase in the CE-regime of colossal magnetoresistive manganites

NASA Astrophysics Data System (ADS)

Ochoa, Emily; Sen, Cengiz; Dagotto, Elbio; Lamar/UTK Collaboration

We report nematic phase tendencies around the first order CE transition in the two-orbital double exchange model with Jahn-Teller phonons at electronic density n = 0 . 5 . Starting with a random state at high temperatures, we employ a careful cool-down method using a Monte Carlo algorithm. We then monitor the spin structure factor S (q) of the CE phase as a function of temperature. Near the critical temperature, S (q) grows with decreasing temperature for both right- and left-ordered CE ladders, followed by a spontaneous symmetry breaking into one or the other as the critical temperature is achieved. Below the critical temperature a pure CE state with a staggered charge order is obtained. Our results are similar to those observed in pnictides in earlier studies. Lamar University Office of Undergraduate Research, and U.S. Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division.

Phonon-Mediated Colossal Magnetoresistance in Graphene/Black Phosphorus Heterostructures.

PubMed

Liu, Yanpeng; Yudhistira, Indra; Yang, Ming; Laksono, Evan; Luo, Yong Zheng; Chen, Jianyi; Lu, Junpeng; Feng, Yuan Ping; Adam, Shaffique; Loh, Kian Ping

2018-06-13

There is a huge demand for magnetoresistance (MR) sensors with high sensitivity, low energy consumption, and room temperature operation. It is well-known that spatial charge inhomogeneity due to impurities or defects introduces mobility fluctuations in monolayer graphene and gives rise to MR in the presence of an externally applied magnetic field. However, to realize a MR sensor based on this effect is hampered by the difficulty in controlling the spatial distribution of impurities and the weak magnetoresistance effect at the monolayer regime. Here, we fabricate a highly stable monolayer graphene-on-black phosphorus (G/BP) heterostructure device that exhibits a giant MR of 775% at 9 T magnetic field and 300 K, exceeding by far the MR effects from devices made from either monolayer graphene or few-layer BP alone. The positive MR of the G/BP device decreases when the temperature is lowered, indicating a phonon-mediated process in addition to scattering by charge impurities. Moreover, a nonlocal MR of >10 000% is achieved for the G/BP device at room temperature due to an enhanced flavor Hall effect induced by the BP channel. Our results show that electron-phonon coupling between 2D material and a suitable substrate can be exploited to create giant MR effects in Dirac semimetals.

Colossal magnetoresistance in amino-functionalized graphene quantum dots at room temperature: manifestation of weak anti-localization and doorway to spintronics

NASA Astrophysics Data System (ADS)

Roy, Rajarshi; Thapa, Ranjit; Kumar, Gundam Sandeep; Mazumder, Nilesh; Sen, Dipayan; Sinthika, S.; Das, Nirmalya S.; Chattopadhyay, Kalyan K.

2016-04-01

In this work, we have demonstrated the signatures of localized surface distortions and disorders in functionalized graphene quantum dots (fGQD) and consequences in magneto-transport under weak field regime (~1 Tesla) at room temperature. Observed positive colossal magnetoresistance (MR) and its suppression is primarily explained by weak anti-localization phenomenon where competitive valley (inter and intra) dependent scattering takes place at room temperature under low magnetic field; analogous to low mobility disordered graphene samples. Furthermore, using ab-initio analysis we show that sub-lattice sensitive spin-polarized ground state exists in the GQD as a result of pz orbital asymmetry in GQD carbon atoms with amino functional groups. This spin polarized ground state is believed to help the weak anti-localization dependent magneto transport by generating more disorder and strain in a GQD lattice under applied magnetic field and lays the premise for future graphene quantum dot based spintronic applications.In this work, we have demonstrated the signatures of localized surface distortions and disorders in functionalized graphene quantum dots (fGQD) and consequences in magneto-transport under weak field regime (~1 Tesla) at room temperature. Observed positive colossal magnetoresistance (MR) and its suppression is primarily explained by weak anti-localization phenomenon where competitive valley (inter and intra) dependent scattering takes place at room temperature under low magnetic field; analogous to low mobility disordered graphene samples. Furthermore, using ab-initio analysis we show that sub-lattice sensitive spin-polarized ground state exists in the GQD as a result of pz orbital asymmetry in GQD carbon atoms with amino functional groups. This spin polarized ground state is believed to help the weak anti-localization dependent magneto transport by generating more disorder and strain in a GQD lattice under applied magnetic field and lays the premise for

Manganite perovskite ceramics, their precursors and methods for forming

DOEpatents

Payne, David Alan; Clothier, Brent Allen

2015-03-10

Disclosed are a variety of ceramics having the formula Ln.sub.1-xM.sub.xMnO.sub.3, where 0.Itoreq.x.Itoreq.1 and where Ln is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or Y; M is Ca, Sr, Ba, Cd, or Pb; manganite precursors for preparing the ceramics; a method for preparing the precursors; and a method for transforming the precursors into uniform, defect-free ceramics having magnetoresistance properties. The manganite precursors contain a sol and are derived from the metal alkoxides: Ln(OR).sub.3, M(OR).sub.2 and Mn(OR).sub.2, where R is C.sub.2 to C.sub.6 alkyl or C.sub.3 to C.sub.9 alkoxyalkyl, or C.sub.6 to C.sub.9 aryl. The preferred ceramics are films prepared by a spin coating method and are particularly suited for incorporation into a device such as an integrated circuit device.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baldini, Maria; Muramatsu, Takaki; Sherafati, Mohammad

Phase separation is a crucial ingredient of the physics of manganites; however, the role of mixed phases in the development of the colossal magnetoresistance (CMR) phenomenon still needs to be clarified. In this paper, we report the realization of CMR in a single-valent LaMnO 3 manganite. We found that the insulator-to-metal transition at 32 GPa is well described using the percolation theory. Pressure induces phase separation, and the CMR takes place at the percolation threshold. A large memory effect is observed together with the CMR, suggesting the presence of magnetic clusters. The phase separation scenario is well reproduced, solving amore » model Hamiltonian. Finally, our results demonstrate in a clean way that phase separation is at the origin of CMR in LaMnO 3.« less

Evolution and sign control of square-wave-like anisotropic magneto-resistance in spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3}/LaAlO{sub 3}(001) manganite thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Keating, S.

2016-04-14

We investigated magneto-transport properties of a compressively strained spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) thin film micro-bridge deposited on LaAlO{sub 3}. Angular dependence of the magneto-resistance R(θ) of this bridge, where θ is the angle between the magnetic field and the current directions in the film plane, exhibits sharp positive and negative percolation jumps near T{sub MIT}. The sign and the magnitude of these jumps can be tuned using the magnetic field. Such behavior has not been observed in LPCMO micro-bridges subjected to tensile strain, indicating a correlation between the type of the lattice strain, the distribution ofmore » electronic domains, and the anisotropic magneto-resistance in spatially confined manganite systems.« less

Effect of charge ordering and phase separation on the electrical and magnetoresistive properties of polycrystalline La0.4Eu0.1Ca0.5MnO3

NASA Astrophysics Data System (ADS)

Krichene, A.; Boujelben, W.; Mukherjee, S.; Shah, N. A.; Solanki, P. S.

2018-03-01

We have investigated the effect of charge ordering and phase separation on the electrical and magnetotransport properties of La0.4Eu0.1Ca0.5MnO3 polycrystalline sample. Temperature dependence of resistivity shows a metal-insulator transition at transition temperature Tρ. A hysteretic behavior is observed for zero field resistivity curves with Tρ = 128 K on cooling process and Tρ = 136 K on warming process. Zero field resistivity curves follow Zener polynomial law in the metallic phase with unusual n exponent value ∼9. Presence of resistivity minimum at low temperatures has been ascribed to the coulombic electron-electron scattering process. Resistivity modification due to the magnetic field cycling testifies the presence of the training effect. Magnetization and resistivity appear to be highly correlated. Magnetoresistive study reveals colossal values of negative magnetoresistance reaching about 75% at 132 K under only 2T applied field. Colossal values of magnetoresistance suggest the possibility of using this sample for magnetic field sensing and spintronic applications.

Investigation of continuous changes in the electric-field-induced electronic state in Bi(1-x)Ca(x)FeO(3-δ).

PubMed

Ikeda-Ohno, Atsushi; Lim, Ji Soo; Ohkochi, Takuo; Yang, Chan-Ho; Seidel, Jan

2014-09-07

Amongst the most interesting phenomena in correlated oxide systems are the doping-driven competitions between energetically similar ground states found in, e.g., high-Tc superconductors and colossal magnetoresistance manganites. It has recently been reported that doped multiferroics also exhibit this generic concept of phase competition. Here, we employ photoelectron emission microscopy (PEEM) to demonstrate evidence of systematic changes in the electronic structure of Bi(1-x)Ca(x)FeO(3-δ) treated by electrically controlled hole carrier doping, the outcome of which clearly correlates with the local modulation of electronic conductivity observed in the same material.

Development of novel nonvolatile memory devices using the colossal magnetoresistive oxide praseodymium-calcium-manganese trioxide

NASA Astrophysics Data System (ADS)

Papagianni, Christina

Pr0.7Ca0.3MnO3 (PCMO) manganese oxide belongs in the family of materials known as transition metal oxides. These compounds have received increased attention due to their perplexing properties such as Colossal Magnetoresistance effect, Charge-Ordered phase, existence of phase-separated states etc. In addition, it was recently discovered that short electrical pulses in amplitude and duration are sufficient to induce reversible and non-volatile resistance changes in manganese perovskite oxide thin films at room temperature, known as the EPIR effect. The existence of the EPIR effect in PCMO thin films at room temperature opens a viable way for the realization of fast, high-density, low power non-volatile memory devices in the near future. The purpose of this study is to investigate, optimize and understand the properties of Pr0.7Ca0.3MnO 3 (PCMO) thin film devices and to identify how these properties affect the EPIR effect. PCMO thin films were deposited on various substrates, such as metals, and conducting and insulating oxides, by pulsed laser and radio frequency sputtering methods. Our objective was to understand and compare the induced resistive states. We attempted to identify the induced resistance changes by considering two resistive models to be equivalent to our devices. Impedance spectroscopy was also utilized in a wide temperature range that was extended down to 70K. Fitted results of the temperature dependence of the resistance states were also included in this study. In the same temperature range, we probed the resistance changes in PCMO thin films and we examined whether the phase transitions affect the EPIR effect. In addition, we included a comparison of devices with electrodes consisting of different size and different materials. We demonstrated a direct relation between the EPIR effect and the phase diagram of bulk PCMO samples. A model that could account for the observed EPIR effect is presented.

Competition between coexisting phases in (La,Pr)CaMnO3 manganites

NASA Astrophysics Data System (ADS)

Masunaga, S. H.; Jardim, R. F.

2007-10-01

Polycrystalline La5/8-yPryCa3/8MnO3, 0⩽y⩽0.625, samples were synthesized by the solid-state reaction method and studied using x-ray powder diffraction, magnetic susceptibility [χ(T)], and magnetoresistivity [ρ(T,H)] measurements. Some features such as an appreciable thermal hysteresis observed in both ρ(T ) and χ(T ) curves indicated a competing scenario due to the coexistence of different phases. We have also found that there is a critical region in the phase diagram, for the Pr concentration ranging from ˜0.30 to 0.40, where the magnitude of the insulator to metal transition temperature (TMI), the Curie temperature (TC), the magnetoresistance, and the residual resistivity (ρ0) are characterized by abrupt changes with little increase in y. Our data also indicate that the physical properties of these manganites in this critical region are dominated by a strong competition between coexisting ferromagnetic metallic and charge-ordered insulating phases.

Positive magnetoresistance of La0.7Sr0.3MnO3/C composites

NASA Astrophysics Data System (ADS)

Kabirov, Yu. V.; Gavrilyachenko, V. G.; Bogatin, A. S.

2016-07-01

The perovskite manganite La0.7Sr0.3MnO3 compound is used as a component in ceramic (1-x)(La0.7Sr0.3MnO3)-xC composites at x = 0.15-0.85. It is found that every studied specimen is characterized by the linear dependence of the positive magnetoresistance (PMR) on the magnetic field strength at room temperature. The 0.6(La0.7Sr0.3MnO3)-0.4C composite has the largest magnetoresistance value (15%) at room temperature and intensity of magnetic field H=15kOe. A possible mechanism for the PMR of (1-x)(La0.7Sr0.3MnO3)-xC composites is discussed.

Nanostructure studies of strongly correlated materials.

PubMed

Wei, Jiang; Natelson, Douglas

2011-09-01

Strongly correlated materials exhibit an amazing variety of phenomena, including metal-insulator transitions, colossal magnetoresistance, and high temperature superconductivity, as strong electron-electron and electron-phonon couplings lead to competing correlated ground states. Recently, researchers have begun to apply nanostructure-based techniques to this class of materials, examining electronic transport properties on previously inaccessible length scales, and applying perturbations to drive systems out of equilibrium. We review progress in this area, particularly emphasizing work in transition metal oxides (Fe(3)O(4), VO(2)), manganites, and high temperature cuprate superconductors. We conclude that such nanostructure-based studies have strong potential to reveal new information about the rich physics at work in these materials.

Controlled mechnical modification of manganite surface with nanoscale resolution

DOE PAGES

Kelly, Simon J.; Kim, Yunseok; Eliseev, Eugene; ...

2014-11-07

We investigated the surfaces of magnetoresistive manganites, La1-xCaxMnO3 and La2-2xSr1+2xMn2O7, using a combination of ultrahigh vacuum conductive, electrostatic and magnetic force microscopy methods. Scanning as-grown film with a metal tip, even with zero applied bias, was found to modify the surface electronic properties such that in subsequent scans, the conductivity is reduced below the noise level of conductive probe microscopy. Scanned areas also reveal a reduced contact potential difference relative to the pristine surface by ~0.3 eV. We propose that contact-pressure of the tip modifies the electrochemical potential of oxygen vacancies via the Vegard effect, causing vacancy motion and concomitantmore » changes of the electronic properties.« less

Large linear magnetoresistance in heavily-doped Nb:SrTiO3 epitaxial thin films

PubMed Central

Jin, Hyunwoo; Lee, Keundong; Baek, Seung-Hyub; Kim, Jin-Sang; Cheong, Byung-ki; Park, Bae Ho; Yoon, Sungwon; Suh, B. J.; Kim, Changyoung; Seo, S. S. A.; Lee, Suyoun

2016-01-01

Interaction between electrons has long been a focused topic in condensed-matter physics since it has led to the discoveries of astonishing phenomena, for example, high-Tc superconductivity and colossal magnetoresistance (CMR) in strongly-correlated materials. In the study of strongly-correlated perovskite oxides, Nb-doped SrTiO3 (Nb:SrTiO3) has been a workhorse not only as a conducting substrate, but also as a host possessing high carrier mobility. In this work, we report the observations of large linear magnetoresistance (LMR) and the metal-to-insulator transition (MIT) induced by magnetic field in heavily-doped Nb:STO (SrNb0.2Ti0.8O3) epitaxial thin films. These phenomena are associated with the interplay between the large classical MR due to high carrier mobility and the electronic localization effect due to strong spin-orbit coupling, implying that heavily Nb-doped Sr(Nb0.2Ti0.8)O3 is promising for the application in spintronic devices. PMID:27703222

Hall effect within the colossal magnetoresistive semimetallic state of MoTe2

NASA Astrophysics Data System (ADS)

Zhou, Qiong; Rhodes, D.; Zhang, Q. R.; Tang, S.; Schönemann, R.; Balicas, L.

2016-09-01

Here, we report a systematic study on the Hall effect of the semimetallic state of bulk MoTe2, which was recently claimed to be a candidate for a novel type of Weyl semimetallic state. The temperature (T ) dependence of the carrier densities and of their mobilities, as estimated from a numerical analysis based on the isotropic two-carrier model, indicates that its exceedingly large and nonsaturating magnetoresistance may be attributed to a near perfect compensation between the densities of electrons and holes at low temperatures. A sudden increase in hole density, with a concomitant rapid increase in the electron mobility below T ˜40 K, leads to comparable densities of electrons and holes at low temperatures suggesting a possible electronic phase transition around this temperature.

Role of structure imperfection in the formation of the magnetotransport properties of rare-earth manganites with a perovskite structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pashchenko, A. V., E-mail: alpash@mail.ru; Pashchenko, V. P.; Prokopenko, V. K.

2017-01-15

The structure, the structure imperfection, and the magnetoresistance, magnetotransport, and microstructure properties of rare-earth perovskite La{sub 0.3}Ln{sub 0.3}Sr{sub 0.3}Mn{sub 1.1}O{sub 3–δ} manganites are studied by X-ray diffraction, thermogravimetry, electrical resistivity measurement, magnetic, {sup 55}Mn NMR, magnetoresistance measurement, and scanning electron microscopy. It is found that the structure imperfection increases, and the symmetry of a rhombohedrally distorted R3̅c perovskite structure changes into its pseudocubic type during isovalent substitution for Ln = La{sup 3+}, Pr{sup 3+}, Nd{sup 3+}, Sm{sup 3+}, or Eu{sup 3+} when the ionic radius of an A cation decreases. Defect molar formulas are determined for a real perovskite structure,more » which contains anion and cation vacancies. The decrease in the temperatures of the metal–semiconductor (T{sub ms}) and ferromagnet–paramagnet (T{sub C}) phase transitions and the increase in electrical resistivity ρ and activation energy E{sub a} with increasing serial number of Ln are caused by an increase in the concentration of vacancy point defects, which weaken the double exchange 3d{sup 4}(Mn{sup 3+})–2p{sup 6}(O{sup 2–})–3d{sup 3}(Mn{sup 4+})–V{sup (a)}–3d{sup 4}(Mn{sup 3+}). The crystal structure of the compositions with Ln = La contains nanostructured planar clusters, which induce an anomalous magnetic hysteresis at T = 77 K. Broad and asymmetric {sup 55}Mn NMR spectra support the high-frequency electronic double exchange Mn{sup 3+}(3d{sup 4}) ↔ O{sup 2–}(2p{sup 6}) ↔ Mn{sup 4+}(3d{sup 3}) and indicate a heterogeneous surrounding of manganese by other ions and vacancies. A correlation is revealed between the tunneling magnetoresistance effect and the crystallite size. A composition–structure imperfection–property experimental phase diagram is plotted. This diagram supports the conclusion about a strong influence of structure imperfection on the formation of the

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, M.; Peng, J.; Zou, T.

Here, we present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca 3Ru 2O 7. Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulating ground state in a Mott-Hubbard system, thus calling for a deeper theoretical study to reexamine the magnetic field tuning of Mott systems with magnetic and electronic instabilities and spin-lattice-charge coupling. This study further provides a model approach to searchmore » for CMR systems other than manganites, such as Mott insulators in the vicinity of the boundary between competing phases.« less

Current-voltage characteristics of manganite-titanite perovskite junctions.

PubMed

Ifland, Benedikt; Peretzki, Patrick; Kressdorf, Birte; Saring, Philipp; Kelling, Andreas; Seibt, Michael; Jooss, Christian

2015-01-01

After a general introduction into the Shockley theory of current voltage (J-V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite-titanate p-n heterojunctions made of n-doped SrTi1- y Nb y O3, y = 0.002 and p-doped Pr1- x Ca x MnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC) in a thin cross plane lamella of the junction. In the J-V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER) effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron-polaron hole-polaron pair generation and separation at the interface.

Local spin density functional investigations of a manganite with perovskite-type derived structures

NASA Astrophysics Data System (ADS)

Matar, S. F.; Studer, F.; Siberchicot, B.; Subramanian, M. A.; Demazeau, G.; Etourneau, J.

1998-11-01

The electronic and magnetic structures of the perovskite CaMnO3 are self-consistently calculated assuming two crystal structures at the same formula unit volume within the local spin density functional theory and the augmented spherical wave (ASW) method. From the comparisons of energy differences between the different magnetic states the ground state configuration is an insulator with G-type ordering. This result together with the magnitudes of the magnetic moments are in agreement with experiment. The influence of mixing between Mn and O is found spin dependent from the analysis of the crystal orbital overlap population (COOP) which enable to describe the chemical bond. The calculations underline a feature of a half metallic ferromagnet which could be connected with the colossal magnetoresistance (CMR) property of related compounds.

Giant magnetoelectric effect in pure manganite-manganite heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paul, Sanjukta; Pankaj, Ravindra; Yarlagadda, Sudhakar

2017-11-01

Obtaining strong magnetoelectric couplings in bulk materials and heterostructures is an ongoing challenge. We demonstrate that manganite heterostructures of the form (Insulator) /(LaMnO3)(n)/Interface/(CaMnO3)(n)/(Insulator) show strong multiferroicity in magnetic manganites where ferroelectric polarization is realized by charges leaking from LaMnO3 to CaMnO3 due to repulsion. Here, an effective nearest-neighbor electron-electron (electron-hole) repulsion (attraction) is generated by cooperative electron-phonon interaction. Double exchange, when a particle virtually hops to its unoccupied neighboring site and back, produces magnetic polarons that polarize antiferromagnetic regions. Thus a striking giant magnetoelectric effect ensues when an external electrical field enhances the electron leakage across the interface.

Phase shift of oscillatory magnetoresistance in a double-cross thin film structure of La0.3Pr0.4Ca0.3MnO3 via strain-engineered elongation of electronic domains

NASA Astrophysics Data System (ADS)

Alagoz, H. S.; Prasad, B.; Jeon, J.; Blamire, M. G.; Chow, K. H.; Jung, J.

2018-02-01

The subtle balance between the competing electronic phases in manganites due to complex interplay between spin, charge, and orbital degrees of freedom could allow one to modify the properties of electronically phase separated systems. In this paper, we show that the phase shift in the oscillatory magnetoresistance ρ (θ ) can be modified by engineering strain driven elongation of electronic domains in La0.3Pr0.4Ca0.3MnO3 (LPCMO) thin films. Strain-driven elongation of magnetic domains can produce different percolation paths and hence different anisotropic magnetoresistance responses. This tunability provides a unique control that is unattainable in conventional 3 d ferromagnetic metals and alloys.

Giant magnetoelastic spin-flop with magnetocrystalline instability in La1.4Sr1.6Mn2O7

NASA Astrophysics Data System (ADS)

Ko, K.-T.; Jang, H.; Kim, D.-H.; Park, B.-G.; Kim, J.-Y.; Kim, S. B.; Oh, Y.-S.; Cheong, S.-W.; Park, J.-H.

2018-01-01

We studied a low-field giant magnetostrictive spin-flop transition in a colossal magnetoresistance manganite La1.4Sr1.6Mn2O7 using resonant soft x-ray diffraction and soft x-ray absorption spectroscopy at the Mn L2 ,3 edge. The spin-flop transition is induced by an instability of magnetocrystalline anisotropy near a critical eg orbital configuration with a balanced occupation in dx2-y2 and d3 z2-r2 states, which contribute in-plane and out-of-plane orbital angular momenta, respectively. The magnetic field drives a certain change in the orbital occupation with lattice distortion to switch the magnetic anisotropy, resulting in the spin-flop transition. These results provide a comprehensive mechanism of interplay between spin, orbital, and lattice degrees of freedom to realize a low-field giant magnetoelasticity.

New Sulfide Compounds MeXMn1-XS (Me=3d Metal) with the Colossal Magnetoresistance Effect

DTIC Science & Technology

2006-05-19

is to synthesize the new MeXMn1-XS (Me=3d-metal) sulfide compounds and to study the electrical, magnetic and magnetoresistive properties . Recently...oxide compounds of manganese (LaMnO3-type) with perovskite structure have been intensively investigated. This interest is caused by the observation of... properties of the materials with different structure. It is known that alpha - MnS manganese monosulfide, similar to LaMnO3, has the specific

Electrical Transport and Magnetoresistance Properties of Tensile-Strained CaMnO3 Thin Films

NASA Astrophysics Data System (ADS)

Ullery, Dustin; Lawson, Bridget; Zimmerman, William; Neubauer, Samuel; Chaudhry, Adeel; Hart, Cacie; Yong, Grace; Smolyaninova, Vera; Kolagani, Rajeswari

We will present our studies of the electrical transport and magnetoresistance properties of tensile strained CaMnO3 thin films. We observe that the resistivity decreases significantly as the film thickness decreases which is opposite to what is observed in thin films of hole doped manganites. The decrease in resistivity is more pronounced in the films on (100) SrTiO3, with resistivity of the thinnest films being about 3 orders of magnitude lower than that of bulk CaMnO3. Structural changes accompanying resistivity changes cannot be fully explained as due to tensile strain, and indicate the presence of oxygen vacancies. These results also suggest a coupling between tensile strain and oxygen deficiency, consistent with predictions from models based on density functional theory calculations. We observe a change in resistance under the application of moderate magnetic field. Experiments are underway to understand the origin of the magnetoresistance and its possible relation to the tensile strain effects. We acknowledge support from: Towson Office of University Undergraduate Research, Fisher Endowment Grant and Undergraduate Research Grants from the Fisher College of Science and Mathematics, and Seed Funding Grant from the School of Emerging technologies.

Tunneling anisotropic magnetoresistance in complex oxide tunnel junctions

NASA Astrophysics Data System (ADS)

Martínez, Benjamín; López-Mir, Laura; Galceran, Regina; Balcells, Lluis; Pomar, Alberto; Konstantinovic, Zorica; Sandiumenge, Felip; Frontera, Carlos; Advanced Characterization of Nanostructured Materials Team

The magnetotransport properties of La2/3Sr1/3MnO3(LSMO)/LaAlO3(LAO)/ Pt tunneling junctions have been analyzed as a function of temperature and magnetic field. The junctions exhibit magnetoresistance (MR) values of about 37%, at H = 90 kOe at low temperature. However, the temperature dependence of MR indicates a clear distinct origin than that of conventional colossal MR. In addition, tunneling anisotropic MR (TAMR) values around 4% are found at low temperature and its angular dependence reflects the expected uniaxial anisotropy. The use of TAMR response could be an alternative of much easier technological implementation than conventional MTJs since only one magnetic electrode is required, thus opening the door to the implementation of more versatile devices. However, further studies are required in order to improve the strong temperature dependence at the present stage. Finantial support from Spanish Ministry of Economy and Competitiveness through the Severo Ochoa Programme for Centres of Excellence in R&D (SEV-2015-0496), and projects MAT2012-33207 and MAT2015-71664-R is acknowledged.

Significant enhancement of magnetoresistance with the reduction of particle size in nanometer scale

PubMed Central

Das, Kalipada; Dasgupta, P.; Poddar, A.; Das, I.

2016-01-01

The Physics of materials with large magnetoresistance (MR), defined as the percentage change of electrical resistance with the application of external magnetic field, has been an active field of research for quite some times. In addition to the fundamental interest, large MR has widespread application that includes the field of magnetic field sensor technology. New materials with large MR is interesting. However it is more appealing to vast scientific community if a method describe to achieve many fold enhancement of MR of already known materials. Our study on several manganite samples [La1−xCaxMnO3 (x = 0.52, 0.54, 0.55)] illustrates the method of significant enhancement of MR with the reduction of the particle size in nanometer scale. Our experimentally observed results are explained by considering model consisted of a charge ordered antiferromagnetic core and a shell having short range ferromagnetic correlation between the uncompensated surface spins in nanoscale regime. The ferromagnetic fractions obtained theoretically in the nanoparticles has been shown to be in the good agreement with the experimental results. The method of several orders of magnitude improvement of the magnetoresistive property will have enormous potential for magnetic field sensor technology. PMID:26837285

Spin Waves and Other Magnetic Fluctuations in Perovskite Manganites

NASA Astrophysics Data System (ADS)

Perring, T. G.

1996-03-01

There has recently been a revival of interest in the doped lanthanum manganites, La_1-xX_xMnO_3, because they exhibit giant magnetoresistance footnote S.Jin et. al., Science 264, 413 (1994); A.Asamitsu et. al., Nature 373 407 (1995). The undoped parent is an insulating antiferromagnet, but the introduction of carriers by doping with X=Sr, Ca, Ba or Pb eventually produces a metallic ferromagnet with Curie temperatures of order room temperature. Above the transition temperature the materials are very poor electrical conductors. Simple yet open questions concerning the ferromagnetism of these materials include how appropriate is a local moment model to describe the magnetic dynamics, the strength of exchange constants and if there is any memory of the parent compound's antiferromagnetism. Inelastic neutron scattering has been used to measure the spin wave dispersion relation throughout the Brillouin zone of the double-exchange ferromagnet La_0.7Pb_0.3MnO3 (work performd in collaboration with G.Aeppli (AT&T Bell Labs), S.M.Hayden (Bristol University), S.A.Carter, S-W Cheong (AT&T Bell Labs), Y.Tokura (Tokyo University) and Y. Moritomo (JRCAT, Tsukuba)). Magnons with energies as high as 95 meV are directly observed and an unexpectedly simple Hamiltonian, with solely a nearest- neighbour coupling of 8.8± 0.2 meV accounts for the entire dispersion relation. The calculated Curie temperature for this local moment Hamiltonian overestimates the measured Curie point by only 15%. Raising temperature yields unusual broadening of the high frequency spin waves even within the ferromagnetic phase. Recent results from the layered compound (La_0.4Sr_0.6)_3Mn_2O_7, a 2-dimensional analogue which also has large magnetoresistance, will be presented as well (with G.Aeppli (AT&T Bell Labs), Y.Tokura (Tokyo University) and Y. Moritomo (JRCAT, Tsukuba)).

Oxygen Impurities Link Bistability and Magnetoresistance in Organic Spin Valves.

PubMed

Bergenti, Ilaria; Borgatti, Francesco; Calbucci, Marco; Riminucci, Alberto; Cecchini, Raimondo; Graziosi, Patrizio; MacLaren, Donald A; Giglia, Angelo; Rueff, Jean Pascal; Céolin, Denis; Pasquali, Luca; Dediu, Valentin

2018-03-07

Vertical crossbar devices based on manganite and cobalt injecting electrodes and a metal-quinoline molecular transport layer are known to manifest both magnetoresistance (MR) and electrical bistability. The two effects are strongly interwoven, inspiring new device applications such as electrical control of the MR and magnetic modulation of bistability. To explain the device functionality, we identify the mechanism responsible for electrical switching by associating the electrical conductivity and the impedance behavior with the chemical states of buried layers obtained by in operando photoelectron spectroscopy. These measurements revealed that a significant fraction of oxygen ions migrate under voltage application, resulting in a modification of the electronic properties of the organic material and of the oxidation state of the interfacial layer with the ferromagnetic contacts. Variable oxygen doping of the organic molecules represents the key element for correlating bistability and MR, and our measurements provide the first experimental evidence in favor of the impurity-driven model describing the spin transport in organic semiconductors in similar devices.

Short-range magentic correlations and dynamic orbital ordering in the thermally activated spin state of LaCoO3

NASA Astrophysics Data System (ADS)

Rosenkranz, S.; Phelan, D.; Louca, D.; Lee, S. H.; Chupas, P. J.; Osborn, R.; Zheng, H.; Mitchell, J. F.

2006-03-01

The cobalt perovskites La1-xSrxCoO3 show intriguing spin, lattice, and orbital properties similar to the ones observed in colossal magnetoresistive manganites. The x=0 parent compound is a non-magnetic insulator at low temperatures, but shows evidence of a spin-state transition of the cobalt ions above 50K from a low-spin to an intermediate or high-spin configuration. Using high resolution, inelastic neutron scattering, we observe a distinct low energy excitation at 0.6meV coincident with the thermally induced spin state transition observed in susceptibility measurements. The thermal activation of this excited spin state also leads to short-range, dynamic ferro- and antiferromagnetic correlations. These observations are consistent with the activation of a zero-field split intermediate spin state as well as the presence of dynamic orbital ordering of these excited states. Work supported by US DOE BES-DMS W-31-109-ENG-38 and NSF DMR-0454672

Large resistivity modulation in mixed-phase metallic systems

DOE PAGES

Lee, Yeonbae; Liu, Z. Q.; Heron, J. T.; ...

2015-01-07

Giant physical responses were discovered, in numerous systems, when two phases coexist; for example, near a phase transition. An intermetallic FeRh system undergoes a first-order antiferromagnetic to ferromagnetic transition above room temperature and shows two-phase coexistence near the transition. We have investigated the effect of an electric field to FeRh/PMN-PT heterostructures and report 8% change in the electrical resistivity of FeRh films. Such a 'giant' electroresistance (GER) response is striking in metallic systems, in which external electric fields are screened, and thus only weakly influence the carrier concentrations and mobilities. We show that our FeRh films comprise coexisting ferromagnetic andmore » antiferromagnetic phases with different resistivities and the origin of the GER effect is the strain-mediated change in their relative proportions. Finally, the observed behaviour is reminiscent of colossal magnetoresistance in perovskite manganites and illustrates the role of mixed-phase coexistence in achieving large changes in physical properties with low-energy external perturbation.« less

Characterization of CaMn2O4 By X-Ray Magnetic Linear Dichroism

NASA Astrophysics Data System (ADS)

Holroyd, Johnathon; Bhatkar, Harshawardhan; Arenholz, Elke; White, Ben; Neumeier, John; Idzerda, Yves

2008-05-01

Perovskite manganite such as LaxCa(1-x)MnO3 (LCMO) have recently drawn attention for their useful electronic and magnetic properties such as Colossal Magnetoresistance. It has been shown that under stress, LCMO thin films show changes in La and Ca concentrations near the interface. One potential impurity under La depleted conditions is antiferromagnetic CaMn2O4. In order to better understand the range of properties available within LCMO systems, it is important to be able to identify and characterize CaMn2O4 within LCMO thin films. X-ray absorption spectroscopy (XAS) and X-ray magnetic linear dichroism (XMLD) are well suited to this task due to their element specificity, sensitivity, and ability to characterize the measure the magnetic properties of antiferromagnetic systems. XAS and XMLD were measured on high quality single crystals of CaMn2O4. These spectra are distinguished from CaMnO3 and demonstrate antiferromagnetic structure.

Colossal dielectric constant up to gigahertz at room temperature

NASA Astrophysics Data System (ADS)

Krohns, S.; Lunkenheimer, P.; Kant, Ch.; Pronin, A. V.; Brom, H. B.; Nugroho, A. A.; Diantoro, M.; Loidl, A.

2009-03-01

The applicability of recently discovered materials with extremely high ("colossal") dielectric constants, required for future electronics, suffers from the fact that their dielectric constant ɛ' only is huge in a limited frequency range below about 1 MHz. In the present report, we show that the dielectric properties of a charge-ordered nickelate, La15/8Sr1/8NiO4, surpass those of other materials. Especially, ɛ' retains its colossal magnitude of >10 000 well into the gigahertz range.

Optical evidence of quantum rotor orbital excitations in orthorhombic manganites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kovaleva, N. N., E-mail: nkovaleva@sci.lebedev.ru; Kugel, K. I.; Potůček, Z.

2016-05-15

In magnetic compounds with Jahn–Teller (JT) ions (such as Mn{sup 3+} or Cu{sup 2+}), the ordering of the electron or hole orbitals is associated with cooperative lattice distortions. There the role of JT effect, although widely recognized, is still elusive in the ground state properties. Here we discovered that, in these materials, there exist excitations whose energy spectrum is described in terms of the total angular momentum eigenstates and is quantized as in quantum rotors found in JT centers. We observed features originating from these excitations in the optical spectra of a model compound LaMnO{sub 3} using ellipsometry technique. Theymore » appear clearly as narrow sidebands accompanying the electron transition between the JT split orbitals at neighboring Mn{sup 3+} ions, displaying anomalous temperature behavior around the Néel temperature T{sub N} ≈ 140 K. We present these results together with new experimental data on photoluminescence found in LaMnO{sub 3}, which lend additional support to the ellipsometry implying the electronic-vibrational origin of the quantum rotor orbital excitations. We note that the discovered orbital excitations of quantum rotors may play an important role in many unusual properties observed in these materials upon doping, such as high-temperature superconductivity and colossal magnetoresistance.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lloyd-Hughes, James; Mosley, C. D. W.; Jones, S. P. P.

Colossal magnetoresistance (CMR) is demonstrated at terahertz (THz) frequencies by using terahertz time-domain magnetospectroscopy to examine vertically aligned nanocomposites (VANs) and planar thin films of La 0.7Sr 0.3MnO 3. At the Curie temperature (room temperature), the THz conductivity of the VAN was dramatically enhanced by over 2 orders of magnitude under the application of a magnetic field with a non-Drude THz conductivity that increased with frequency. The direct current (dc) CMR of the VAN is controlled by extrinsic magnetotransport mechanisms such as spin-polarized tunneling between nanograins. In contrast, we find that THz CMR is dominated by intrinsic, intragrain transport: themore » mean free path was smaller than the nanocolumn size, and the planar thin-film exhibited similar THz CMR to the VAN. Surprisingly, the observed colossal THz magnetoresistance suggests that the magnetoresistance can be large for alternating current motion on nanometer length scales, even when the magnetoresistance is negligible on the macroscopic length scales probed by dc transport. This suggests that colossal magnetoresistance at THz frequencies may find use in nanoelectronics and in THz optical components controlled by magnetic fields. As a result, the VAN can be scaled in thickness while retaining a high structural quality and offers a larger THz CMR at room temperature than the planar film.« less

Structural studies on the substitution of Ag, Na doped LCSMO CMR manganites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subhashini, P., E-mail: subhashinisvu@gmail.com; Krishnaiah, M.; Munirathinam, B.

2016-05-06

Synthesis and characterization of colossal magnetoresistance (CMR) materials has been a subject of scientific research due to the unique transport, magnetotransport, and magnetic properties. The single phase polycrystalline La{sub 0.7}Ca{sub 0.1}Sr{sub 0.1}M{sub 0.1}MnO{sub 3} (LCSMO) (M=Ag and Na) samples prepared using nitrate route method. The structural properties are studied at different dopants by X-ray diffraction. The surface morphology and elemental analysis of both samples were carried out by scanning electron microscopy (SEM) and energy dispersive X-ray technique (EDAX) respectively. The structural analysis shows that the LCSMO is crystallized in an orthorhombic perovskite structure belonging to Pnma space group. The crystalmore » size of the sample is calculated using Scherrer formula. The SEM images show that the polycrystalline grains are observed to be near spherical shape and uniform in size. EDAX spectra taken from the surface of the synthesized powders show a nominal composition near the desired one for M=Na sample where as some vacancies are present in the A-site in the case of Ag substitution as will be discussed in this paper.« less

Multiple crossovers between positive and negative magnetoresistance versus field due to fragile spin structure in metallic GdPd 3 [Oscillating magnetoresistance due to fragile spin structure in metallic GdPd 3

DOE PAGES

Pandey, Abhishek; Mazumdar, Chandan; Ranganathan, R.; ...

2017-02-17

Here, studies on the phenomenon of magnetoresistance (MR) have produced intriguing and application-oriented outcomes for decades–colossal MR, giant MR and recently discovered extremely large MR of millions of percents in semimetals can be taken as examples. We report here the discovery of novel multiple sign changes versus applied magnetic field of the MR in the cubic intermetallic compound GdPd 3. Our study shows that a very strong correlation between magnetic, electrical and magnetotransport properties is present in this compound. The magnetic structure in GdPd 3 is highly fragile since applied magnetic fields of moderate strength significantly alter the spin arrangementmore » within the system–a behavior that manifests itself in the oscillating MR. Intriguing magnetotransport characteristics of GdPd 3 are appealing for field-sensitive device applications, especially if the MR oscillation could materialize at higher temperature by manipulating the magnetic interaction through perturbations caused by chemical substitutions.« less

Multiple crossovers between positive and negative magnetoresistance versus field due to fragile spin structure in metallic GdPd 3 [Oscillating magnetoresistance due to fragile spin structure in metallic GdPd 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pandey, Abhishek; Mazumdar, Chandan; Ranganathan, R.

Here, studies on the phenomenon of magnetoresistance (MR) have produced intriguing and application-oriented outcomes for decades–colossal MR, giant MR and recently discovered extremely large MR of millions of percents in semimetals can be taken as examples. We report here the discovery of novel multiple sign changes versus applied magnetic field of the MR in the cubic intermetallic compound GdPd 3. Our study shows that a very strong correlation between magnetic, electrical and magnetotransport properties is present in this compound. The magnetic structure in GdPd 3 is highly fragile since applied magnetic fields of moderate strength significantly alter the spin arrangementmore » within the system–a behavior that manifests itself in the oscillating MR. Intriguing magnetotransport characteristics of GdPd 3 are appealing for field-sensitive device applications, especially if the MR oscillation could materialize at higher temperature by manipulating the magnetic interaction through perturbations caused by chemical substitutions.« less

Research progress on electronic phase separation in low-dimensional perovskite manganite nanostructures

PubMed Central

2014-01-01

Perovskite oxide manganites with a general formula of R1-x AxMnO3 (where R is a trivalent rare-earth element such as La, Pr, Sm, and A is a divalent alkaline-earth element such as Ca, Sr, and Ba) have received much attention due to their unusual electron-transport and magnetic properties, which are indispensable for applications in microelectronic, magnetic, and spintronic devices. Recent advances in the science and technology have resulted in the feature sizes of microelectronic devices based on perovskite manganite oxides down-scaling into nanoscale dimensions. At the nanoscale, low-dimensional perovskite manganite oxide nanostructures display novel physical properties that are different from their bulk and film counterparts. Recently, there is strong experimental evidence to indicate that the low-dimensional perovskite manganite oxide nanostructures are electronically inhomogeneous, consisting of different spatial regions with different electronic orders, a phenomenon that is named as electronic phase separation (EPS). As the geometry sizes of the low-dimensional manganite nanostructures are reduced to the characteristic EPS length scale (typically several tens of nanometers in manganites), the EPS is expected to be strongly modulated, leading to quite dramatic changes in functionality and more emergent phenomena. Therefore, reduced dimensionality opens a door to the new functionalities in perovskite manganite oxides and offers a way to gain new insight into the nature of EPS. During the past few years, much progress has been made in understanding the physical nature of the EPS in low-dimensional perovskite manganite nanostructures both from experimentalists and theorists, which have a profound impact on the oxide nanoelectronics. This nanoreview covers the research progresses of the EPS in low-dimensional perovskite manganite nanostructures such as nanoparticles, nanowires/nanotubes, and nanostructured films and/or patterns. The possible physical origins of the

Electric-field-induced extremely large change in resistance in graphene ferromagnets

NASA Astrophysics Data System (ADS)

Song, Yu

2018-01-01

A colossal magnetoresistance (˜100×10^3% ) and an extremely large magnetoresistance (˜1×10^6% ) have been previously explored in manganite perovskites and Dirac materials, respectively. However, the requirement of an extremely strong magnetic field (and an extremely low temperature) makes them not applicable for realistic devices. In this work, we propose a device that can generate even larger changes in resistance in a zero-magnetic field and at a high temperature. The device is composed of graphene under two strips of yttrium iron garnet (YIG), where two gate voltages are applied to cancel the heavy charge doping in the YIG-induced half-metallic ferromagnets. By calculations using the Landauer-Büttiker formalism, we demonstrate that, when a proper gate voltage is applied on the free ferromagnet, changes in resistance up to 305×10^6% (16×10^3% ) can be achieved at the liquid helium (nitrogen) temperature and in a zero magnetic field. We attribute such a remarkable effect to a gate-induced full-polarization reversal in the free ferromagnet, which results in a metal-state to insulator-state transition in the device. We also find that the proposed effect can be realized in devices using other magnetic insulators, such as EuO and EuS. Our work should be helpful for developing a realistic switching device that is energy saving and CMOS-technology compatible.

Colossal permittivity materials: Doping for superior dielectrics

NASA Astrophysics Data System (ADS)

Homes, Christopher C.; Vogt, Thomas

2013-09-01

The search for materials with colossal permittivity for use in capacitors has been met with limited success. A newly discovered co-doped titanium oxide material has an extremely high permittivity and negligible dielectric losses, and is likely to enable further scaling in electronic and energy-storage devices.

Ultra-sharp oscillatory magneto-resistance in spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} epitaxial thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Boos, R.

Our investigations of magneto-transport properties of La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} manganite thin films of reduced dimensions revealed dramatic changes in R(θ), the dependence of resistivity on the angle between the magnetic field direction and the current direction, and consequently in the anisotropic magneto-resistance. A regular oscillatory  sin{sup 2}θ form of R(θ) is replaced by a very sharp rectangular-shaped ones when the dimensions of the system become comparable to the size of the intrinsic electronic domains. We discuss possible mechanisms that could be responsible for these changes.

Control of charge order melting through local memristive migration of oxygen vacancies

NASA Astrophysics Data System (ADS)

Wang, Zhi-Hong; Zhang, Q. H.; Gregori, G.; Cristiani, G.; Yang, Y.; Li, X.; Gu, L.; Sun, J. R.; Shen, B.-G.; Habermeier, H.-U.

2018-05-01

The colossal magnetoresistance (CMR) in perovskite manganites and the resistive switching (RS) effect in metal-oxide heterostructures have both attracted intensive attention in the past decades. Up to date, however, there has been surprisingly little effort to study the CMR phenomena by employing a memristive switch or by integrating the CMR and memristive properties in a single RS device. Here, we report a memristive control of the melting of the antiferromagnetic charge ordered (AFM-CO) state in La0.5Ca0.5MnO3 -δ epitaxial films. We show that an in situ electrotailoring of the boundary condition, which results in layers of oxygen vacancies at the metal-oxide interface, can not only suppress the critical magnetic field for the AFM-CO state melting in the interfacial memristive domain, but also promote the one in the common pristine domain of the RS device in the high and low resistive states. Our study thereby highlights the pivotal roles of functional oxygen vacancies and their dynamics in strong correlation physics and electronics.

Thermal cycling effects on static and dynamic properties of a phase separated manganite

NASA Astrophysics Data System (ADS)

Sacanell, J.; Sievers, B.; Quintero, M.; Granja, L.; Ghivelder, L.; Parisi, F.

2018-06-01

In this work we address the interplay between two phenomena which are signatures of the out-of-equilibrium state in phase separated manganites: irreversibility against thermal cycling and aging/rejuvenation process. The sample investigated is La0.5Ca0.5MnO3, a prototypical manganite exhibiting phase separation. Two regimes for isothermal relaxation were observed according to the temperature range: for T > 100 K, aging/rejuvenation effects are observed, while for T < 100 K an irreversible aging was found. Our results show that thermal cycles act as a tool to unveil the dynamical behavior of the phase separated state in manganites, revealing the close interplay between static and dynamic properties of phase separated manganites.

Microscopic theory of longitudinal sound velocity in charge ordered manganites.

PubMed

Rout, G C; Panda, S

2009-10-14

A microscopic theory of longitudinal sound velocity in a manganite system is reported here. The manganite system is described by a model Hamiltonian consisting of charge density wave (CDW) interaction in the e(g) band, an exchange interaction between spins of the itinerant e(g) band electrons and the core t(2g) electrons, and the Heisenberg interaction of the core level spins. The magnetization and the CDW order parameters are considered within mean-field approximations. The phonon Green's function was calculated by Zubarev's technique and hence the longitudinal velocity of sound was finally calculated for the manganite system. The results show that the elastic spring involved in the velocity of sound exhibits strong stiffening in the CDW phase with a decrease in temperature as observed in experiments.

Origin of colossal permittivity in BaTiO3 via broadband dielectric spectroscopy

NASA Astrophysics Data System (ADS)

Han, Hyuksu; Voisin, Christophe; Guillemet-Fritsch, Sophie; Dufour, Pascal; Tenailleau, Christophe; Turner, Christopher; Nino, Juan C.

2013-01-01

Barium titanate (BT) ceramics with Ba/Ti ratios of 0.95 and 1.00 were synthesized using spark plasma sintering (SPS) technique. Dielectric spectroscopy (frequency range from 40 Hz to 1 MHz and temperature range from 300 K to 30 K) was performed on those ceramics (SPS BT). SPS BT showed extremely high permittivity up to ˜105, which can be referred to as colossal permittivity, with relatively low dielectric loss of ˜0.05. Data analyses following Debye relaxation and universal dielectric response models indicate that the origin of colossal permittivity in BT ceramics is the result of a hopping polaron within semiconducting grains in combination with interfacial polarization at the insulating grain boundary. Furthermore, the contributions of each polarization mechanism to the colossal permittivity in SPS BT, such as a hopping polarization, internal barrier layer capacitance effect, and electrode effect, were estimated.

Control of the orbital ordering in manganite superlattices and impact on properties

NASA Astrophysics Data System (ADS)

Koçak, Ayşegül Begüm; Varignon, Julien; Lemal, Sébastien; Ghosez, Philippe; Lepetit, Marie-Bernadette

2017-09-01

The present paper theoretically studies the possibility to control the orbital ordering in manganite superlattices. Indeed, favored dz2eg -orbital occupancy is one of the proposed interpretations for the formation of a "dead" layer at the interfaces in manganite thin films and superlattices. We show here that favored dz2eg -orbital occupancy at the interfaces can be prevented by using alkaline-earth simple oxides as alternating layers in very thin superlattices. Such an alternating layer promotes the contraction of the manganite layers at the interfaces and favors a dx2-y2eg orbital occupancy. This result holds for different manganites, different alkaline-earth simple oxides, as well as different thicknesses of the two layers. While Boltzmann's transport calculations on different superlattices show unexpectedly only weak dependence of the electrical conductivity on the orbital ordering, the enhanced occupation of the dx2-y2 orbital should result in an increased Curie temperature.

Method of making active magnetic refrigerant, colossal magnetostriction and giant magnetoresistive materials based on Gd-Si-Ge alloys

DOEpatents

Gschneidner, Jr., Karl A.; Pecharsky, Alexandra O.; Pecharsky, Vitalij K.

2003-07-08

Method of making an active magnetic refrigerant represented by Gd.sub.5 (Si.sub.x Ge.sub.1-x).sub.4 alloy for 0.ltoreq.x.ltoreq.1.0 comprising placing amounts of the commercially pure Gd, Si, and Ge charge components in a crucible, heating the charge contents under subambient pressure to a melting temperature of the alloy for a time sufficient to homogenize the alloy and oxidize carbon with oxygen present in the Gd charge component to reduce carbon, rapidly solidifying the alloy in the crucible, and heat treating the solidified alloy at a temperature below the melting temperature for a time effective to homogenize a microstructure of the solidified material, and then cooling sufficiently fast to prevent the eutectoid decomposition and improve magnetocaloric and/or the magnetostrictive and/or the magnetoresistive properties thereof.

Electronic phase separation in insulating (Ga, Mn) As with low compensation: super-paramagnetism and hopping conduction

NASA Astrophysics Data System (ADS)

Yuan, Ye; Wang, Mao; Xu, Chi; Hübner, René; Böttger, Roman; Jakiela, Rafal; Helm, Manfred; Sawicki, Maciej; Zhou, Shengqiang

2018-03-01

In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping transport behavior with a Coulomb gap in the vicinity of the Fermi energy, and the activation energy is reduced by an external magnetic field. A blocking super-paramagnetism is observed rather than ferromagnetism. Below the blocking temperature, the sample exhibits a colossal negative magnetoresistance. Our studies confirm that the disorder-induced electronic phase separation occurs in (Ga,Mn)As samples with a Mn concentration in the insulator-metal transition regime, and it can account for the observed superparamagnetism and the colossal magnetoresistance.

Fast Magnetoresistive Random-Access Memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

1991-01-01

Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

Magnetically induced electrical transport and dielectric properties of 3d transition elemental substitution at the Mn-site in Nd0.67Ba0.33MnO3 manganites

NASA Astrophysics Data System (ADS)

Sudakshina, B.; Arun, B.; Chandrasekhar, K. Devi; Yang, H. D.; Vasundhara, M.

2018-05-01

We have investigated the temperature dependence of electrical transport and dielectric properties along with magnetoresistance and magneto dielectric behavior in Nd0.67Ba0.33Mn0.9TR0.1O3 (TR= Cr, Fe, Co, Ni, Cu) manganites. All the compounds crystallized into an orthorhombic structure with Imma space group. Nd0.67Ba0.33MnO3 shows insulating to metallic behavior at intermediate temperatures, but, with the substitution of transitional elements it shows insulating in nature, down to lowest temperature measured for all the compounds. Dielectric measurement shows the intrinsic behavior of these lossy materials. A large value of magneto resistance is obtained for all the compounds and considerable amount of magneto-dielectric effect is shown for all the substituted compounds at lower temperatures.

Dynamic processes occurring at the Cr IIIaq-manganite (γ-MnOOH) interface: simultaneous adsorption, microprecipitation, oxidation/reduction, and dissolution

NASA Astrophysics Data System (ADS)

Weaver, Robert M.; Hochella, Michael F.; Ilton, Eugene S.

2002-12-01

The complex interaction between Cr IIIaq and manganite (γ-MnOOH) was systematically studied at room temperature over a pH range of 3 to 6, and within a concentration range of 10 -4 to 10 -2 M CrOH 2+aq. Solution compositional changes during batch reactions were characterized by inductively coupled plasma spectroscopy and ultraviolet-visible spectrophotometry. The manganites were characterized before and after reaction with X-ray photoelectron spectroscopy, scanning electron microscopy (SEM), high-resolution field-emission SEM, and energy-dispersive spectroscopy analysis. Fluid-cell atomic force microscopy was used to follow these metal-mineral interactions in situ. The reactions are characterized by (1) sorption of Cr III and the surface-catalyzed microprecipitation of Cr III-hydroxy hydrate on manganite surfaces, (2) the acidic dissolution of the manganite, and (3) the simultaneous reductive dissolution of manganite coupled with the oxidation of Cr IIIaq to highly toxic Cr VIaq. Cr III-hydroxy hydrate was shown to precipitate on the manganite surface while still undersaturated in bulk solution. The rate of manganite dissolution increased with decreasing pH due both to acid-promoted and Mn-reduction-promoted dissolution. Cr oxidation also increased in the lower pH range, this as a result of its direct redox coupling with Mn reduction. Neither Mn II nor Cr VI were ever detected on manganite surfaces, even at the maximum rate of their generation. At the highest pHs of this study, Cr IIIaq was effectively removed from solution to form Cr III-hydroxy hydrate on manganite surfaces and in the bulk solution, and manganite dissolution and Cr VIaq generation were minimized. All interface reactions described above were heterogeneous across the manganite surfaces. This heterogeneity is a direct result of the heterogeneous semiconducting nature of natural manganite crystals and is also an expression of the proximity effect, whereby redox processes on semiconducting surfaces

Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES

DOE PAGES

Samaraweera, R. L.; Liu, H. -C.; Wang, Z.; ...

2017-07-11

Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the observed giant magnetoresistance effect even in the presence of radiation-induced magnetoresistance oscillations, the magnetoresistance oscillations do not modify the giant magnetoresistance, and the magnetoresistance oscillatory extrema, i.e., maxima and minima, disappear rather asymmetricallymore » with increasing I dc. Lastly, the results suggest the interpretation that the I dc serves to suppress scattering between states near the Fermi level in a strong magnetic field limit.« less

Magnetoresistance in relativistic hydrodynamics without anomalies

DOE PAGES

Baumgartner, Andrew; Karch, Andreas; Lucas, Andrew

2017-06-12

We present expressions for the magnetoconductivity and the magnetoresistance of a strongly interacting metal in 3 + 1 dimensions, derivable from relativistic hydrodynamics. Such an approach is suitable for ultraclean metals with emergent Lorentz invariance. When this relativistic fluid contains chiral anomalies, it is known to exhibit longitudinal negative magnetoresistance. We show that similar effects can arise in non-anomalous relativistic fluids due to the distinctive gradient expansion. In contrast with a Galilean-invariant fluid, the resistivity tensor of a dirty relativistic fluid exhibits similar angular dependence to negative magnetoresistance, even when the constitutive relations and momentum relaxation rate are isotropic. Wemore » further account for the effect of magnetic field-dependent corrections to the gradient expansion and the effects of long-wavelength impurities on magnetoresistance. We note that the holographic D3/D7 system exhibits negative magnetoresistance.« less

Magnetoresistance in relativistic hydrodynamics without anomalies

NASA Astrophysics Data System (ADS)

Baumgartner, Andrew; Karch, Andreas; Lucas, Andrew

2017-06-01

We present expressions for the magnetoconductivity and the magnetoresistance of a strongly interacting metal in 3 + 1 dimensions, derivable from relativistic hydrodynamics. Such an approach is suitable for ultraclean metals with emergent Lorentz invariance. When this relativistic fluid contains chiral anomalies, it is known to exhibit longitudinal negative magnetoresistance. We show that similar effects can arise in non-anomalous relativistic fluids due to the distinctive gradient expansion. In contrast with a Galilean-invariant fluid, the resistivity tensor of a dirty relativistic fluid exhibits similar angular dependence to negative magnetoresistance, even when the constitutive relations and momentum relaxation rate are isotropic. We further account for the effect of magnetic field-dependent corrections to the gradient expansion and the effects of long-wavelength impurities on magnetoresistance. We note that the holographic D3/D7 system exhibits negative magnetoresistance.

Spin-dependent Seebeck Effect, Thermal Colossal Magnetoresistance and Negative Differential Thermoelectric Resistance in Zigzag Silicene Nanoribbon Heterojunciton.

PubMed

Fu, Hua-Hua; Wu, Dan-Dan; Zhang, Zu-Quan; Gu, Lei

2015-05-22

Spin-dependent Seebeck effect (SDSE) is one of hot topics in spin caloritronics, which examine the relationships between spin and heat transport in materials. Meanwhile, it is still a huge challenge to obtain thermally induced spin current nearly without thermal electron current. Here, we construct a hydrogen-terminated zigzag silicene nanoribbon heterojunction, and find that by applying a temperature difference between the source and the drain, spin-up and spin-down currents are generated and flow in opposite directions with nearly equal magnitudes, indicating that the thermal spin current dominates the carrier transport while the thermal electron current is much suppressed. By modulating the temperature, a pure thermal spin current can be achieved. Moreover, a thermoelectric rectifier and a negative differential thermoelectric resistance can be obtained in the thermal electron current. Through the analysis of the spin-dependent transport characteristics, a phase diagram containing various spin caloritronic phenomena is provided. In addition, a thermal magnetoresistance, which can reach infinity, is also obtained. Our results put forward an effective route to obtain a spin caloritronic material which can be applied in future low-power-consumption technology.

Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films.

PubMed

Yang, C-H; Seidel, J; Kim, S Y; Rossen, P B; Yu, P; Gajek, M; Chu, Y H; Martin, L W; Holcomb, M B; He, Q; Maksymovych, P; Balke, N; Kalinin, S V; Baddorf, A P; Basu, S R; Scullin, M L; Ramesh, R

2009-06-01

Many interesting materials phenomena such as the emergence of high-Tc superconductivity in the cuprates and colossal magnetoresistance in the manganites arise out of a doping-driven competition between energetically similar ground states. Doped multiferroics present a tantalizing evolution of this generic concept of phase competition. Here, we present the observation of an electronic conductor-insulator transition by control of band-filling in the model antiferromagnetic ferroelectric BiFeO3 through Ca doping. Application of electric field enables us to control and manipulate this electronic transition to the extent that a p-n junction can be created, erased and inverted in this material. A 'dome-like' feature in the doping dependence of the ferroelectric transition is observed around a Ca concentration of approximately 1/8, where a new pseudo-tetragonal phase appears and the electric modulation of conduction is optimized. Possible mechanisms for the observed effects are discussed on the basis of the interplay of ionic and electronic conduction. This observation opens the door to merging magnetoelectrics and magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom already present in the multiferroic BiFeO3.

Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films

NASA Astrophysics Data System (ADS)

Yang, C.-H.; Seidel, J.; Kim, S. Y.; Rossen, P. B.; Yu, P.; Gajek, M.; Chu, Y. H.; Martin, L. W.; Holcomb, M. B.; He, Q.; Maksymovych, P.; Balke, N.; Kalinin, S. V.; Baddorf, A. P.; Basu, S. R.; Scullin, M. L.; Ramesh, R.

2009-06-01

Many interesting materials phenomena such as the emergence of high-Tc superconductivity in the cuprates and colossal magnetoresistance in the manganites arise out of a doping-driven competition between energetically similar ground states. Doped multiferroics present a tantalizing evolution of this generic concept of phase competition. Here, we present the observation of an electronic conductor-insulator transition by control of band-filling in the model antiferromagnetic ferroelectric BiFeO3 through Ca doping. Application of electric field enables us to control and manipulate this electronic transition to the extent that a p-n junction can be created, erased and inverted in this material. A `dome-like' feature in the doping dependence of the ferroelectric transition is observed around a Ca concentration of ~1/8, where a new pseudo-tetragonal phase appears and the electric modulation of conduction is optimized. Possible mechanisms for the observed effects are discussed on the basis of the interplay of ionic and electronic conduction. This observation opens the door to merging magnetoelectrics and magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom already present in the multiferroic BiFeO3.

Tunneling Evidence of Half-Metallic Ferromagnetism in La(0.7)Ca(0.3)MnO(3)

NASA Technical Reports Server (NTRS)

Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

1997-01-01

Direct experimental evidence of half-metallic density of states (DOS) is observed by scanning tunneling spectroscopy on ferromagnetic La(0.7)Ca(0.3)MnO(3) which exhibits colossal magnetoresistance (SMR).

Sorption of strontium-90 from fresh waters during sulfate modification of barium manganite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryzhen`kov, A.P.; Egorov, Yu.V.

1995-11-01

Recovery of strontium-90 with barium manganite from fresh waters (natural fresh waters of open basins) can be increased by adding agents that contain sulfate ions and thus modify the sorbent and chemically bind the sorbate. The treatment results in a heterogeneous anion-exchange transformation of barium manganite into barium sulfate-manganese dioxide and in simultaneous absorptive coprecipitation of strontium sulfate (microcomponent).

Large magnetoresistance in (La1-xCaxMnO3)1-y:ZrO2 composite

NASA Astrophysics Data System (ADS)

Das, D.; Saha, A.; Russek, S. E.; Raj, R.; Bahadur, D.

2003-05-01

Colossal magnetoresistance (CMR) composite materials have been synthesized to explore the possibility of improving magneto-transport and structural properties in CMR systems. In this work we describe (La1-xCaxMnO3)1-y (LCMO) (ZrO2)y (x≈0.3 and 0.0⩽y⩽0.40 mole %) composites that have been synthesized using a modified (non Pechini type) sol-gel technique. Magnetoresistivity of the composites was evaluated at 5 T field and in the temperature range 5-300 K. The composites show higher magnitude of MR compared to pure LCMO. The MR rises from a base value 76%, for the case y=0, to a maximum value of 93.8%, obtained at y=0.05. dc susceptibility measurements show a distinct ferromagnetic to paramagnetic transition in all composites. The ferromagnetic transition temperature (TC) drops from 225 K in pure LCMO (y=0) to 121 K in y=0.05 and then slowly rises to 157 K as y increases. The plots of zero field cooled susceptibility χZFC (T) and field cooled susceptibility χFC (T) diverge clearly below TC, indicating magnetic irreversibility. The composite exhibits a clear metal-insulator transition (TMI) at or just above the magnetic transition. The peak resistivity ρMI at the metal-insulator transition also exhibits interesting changes. For pure LCMO polycrystals, ρMI=102 Ω cm, but it increases to 228 Ω cm for y=0.05 and then gradually decreases to 1.94 Ω cm for y⩾0.10. The phase evolution in the LCMO:ZrO2 composites was studied by x-ray powder diffraction and correlated to the magnetic and electrical properties.

Colossal magnetocapacitive effect in differently synthesized and doped CdCr 2S 4

NASA Astrophysics Data System (ADS)

Krohns, S.; Schrettle, F.; Lunkenheimer, P.; Tsurkan, V.; Loidl, A.

2008-12-01

In the present work, we address the question of an impurity-related origin of the colossal magnetocapacitive effect in the spinel system CdCr 2S 4. We demonstrate that a strong variation in the dielectric constant below the magnetic transition temperature or in external magnetic fields also arises in crystals prepared without chlorine. This excludes that an inhomogeneous distribution of chlorine impurities at the surface or in the bulk material gives rise to the unusual effects in the spinel multiferroics. In addition, we show that the colossal magnetocapacitive effects can also be generated in chlorine-free ceramic samples of CdCr 2S 4, doped with indium.

Viscous magnetoresistance of correlated electron liquids

NASA Astrophysics Data System (ADS)

Levchenko, Alex; Xie, Hong-Yi; Andreev, A. V.

2017-03-01

We develop a theory of magnetoresistance of two-dimensional electron systems in a smooth disorder potential in the hydrodynamic regime. Our theory applies to two-dimensional semiconductor structures with strongly correlated carriers when the mean free path due to electron-electron collisions is sufficiently short. The dominant contribution to magnetoresistance arises from the modification of the flow pattern by the Lorentz force, rather than the magnetic field dependence of the kinetic coefficients of the electron liquid. The resulting magnetoresistance is positive and quadratic at weak fields. Although the resistivity is governed by both the viscosity and thermal conductivity of the electron fluid, the magnetoresistance is controlled by the viscosity only. This enables the extraction of viscosity of the electron liquid from magnetotransport measurements.

One-Dimensional Perovskite Manganite Oxide Nanostructures: Recent Developments in Synthesis, Characterization, Transport Properties, and Applications

NASA Astrophysics Data System (ADS)

Li, Lei; Liang, Lizhi; Wu, Heng; Zhu, Xinhua

2016-03-01

One-dimensional nanostructures, including nanowires, nanorods, nanotubes, nanofibers, and nanobelts, have promising applications in mesoscopic physics and nanoscale devices. In contrast to other nanostructures, one-dimensional nanostructures can provide unique advantages in investigating the size and dimensionality dependence of the materials' physical properties, such as electrical, thermal, and mechanical performances, and in constructing nanoscale electronic and optoelectronic devices. Among the one-dimensional nanostructures, one-dimensional perovskite manganite nanostructures have been received much attention due to their unusual electron transport and magnetic properties, which are indispensable for the applications in microelectronic, magnetic, and spintronic devices. In the past two decades, much effort has been made to synthesize and characterize one-dimensional perovskite manganite nanostructures in the forms of nanorods, nanowires, nanotubes, and nanobelts. Various physical and chemical deposition techniques and growth mechanisms are explored and developed to control the morphology, identical shape, uniform size, crystalline structure, defects, and homogenous stoichiometry of the one-dimensional perovskite manganite nanostructures. This article provides a comprehensive review of the state-of-the-art research activities that focus on the rational synthesis, structural characterization, fundamental properties, and unique applications of one-dimensional perovskite manganite nanostructures in nanotechnology. It begins with the rational synthesis of one-dimensional perovskite manganite nanostructures and then summarizes their structural characterizations. Fundamental physical properties of one-dimensional perovskite manganite nanostructures are also highlighted, and a range of unique applications in information storages, field-effect transistors, and spintronic devices are discussed. Finally, we conclude this review with some perspectives/outlook and future

One-Dimensional Perovskite Manganite Oxide Nanostructures: Recent Developments in Synthesis, Characterization, Transport Properties, and Applications.

PubMed

Li, Lei; Liang, Lizhi; Wu, Heng; Zhu, Xinhua

2016-12-01

One-dimensional nanostructures, including nanowires, nanorods, nanotubes, nanofibers, and nanobelts, have promising applications in mesoscopic physics and nanoscale devices. In contrast to other nanostructures, one-dimensional nanostructures can provide unique advantages in investigating the size and dimensionality dependence of the materials' physical properties, such as electrical, thermal, and mechanical performances, and in constructing nanoscale electronic and optoelectronic devices. Among the one-dimensional nanostructures, one-dimensional perovskite manganite nanostructures have been received much attention due to their unusual electron transport and magnetic properties, which are indispensable for the applications in microelectronic, magnetic, and spintronic devices. In the past two decades, much effort has been made to synthesize and characterize one-dimensional perovskite manganite nanostructures in the forms of nanorods, nanowires, nanotubes, and nanobelts. Various physical and chemical deposition techniques and growth mechanisms are explored and developed to control the morphology, identical shape, uniform size, crystalline structure, defects, and homogenous stoichiometry of the one-dimensional perovskite manganite nanostructures. This article provides a comprehensive review of the state-of-the-art research activities that focus on the rational synthesis, structural characterization, fundamental properties, and unique applications of one-dimensional perovskite manganite nanostructures in nanotechnology. It begins with the rational synthesis of one-dimensional perovskite manganite nanostructures and then summarizes their structural characterizations. Fundamental physical properties of one-dimensional perovskite manganite nanostructures are also highlighted, and a range of unique applications in information storages, field-effect transistors, and spintronic devices are discussed. Finally, we conclude this review with some perspectives/outlook and future

Reinforcement of double-exchange ferromagnetic coupling by Ru in La{sub 1.24}Sr{sub 1.76}Mn{sub 2-y}Ru{sub y}O{sub 7} manganite system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumaresavanji, M., E-mail: vanji.hplt@gmail.com; Fontes, M.B.; Lopes, A.M.L.

2014-03-01

Highlights: • Effect of Mn-site doping by Ru has been studied in La{sub 1.24}Sr{sub 1.76}Mn{sub 2-y}Ru{sub y}O{sub 7}. • Electrical resistance, magnetoresistance and magnetic properties were measured. • Ru substitution enhances the ferromagnetism and metallicity. • Results were interpreted by the ferromagnetically coupled Ru with Mn ions in Mn–O–Ru network. - Abstract: The effect of Mn-site doping on magnetic and transport properties in the bilayer manganites La{sub 1.24}Sr{sub 1.76}Mn{sub 2-y}Ru{sub y}O{sub 7} (y = 0.0, 0.04, 0.08 and 0.15) has been studied. The undoped compound La{sub 1.24}Sr{sub 1.76}Mn{sub 2}O{sub 7} exhibits a ferromagnetic metal to paramagnetic insulator transition at T{submore » C} = 130 K and the substitution of Ru shifts the transition temperatures to higher temperature values. The increased metal–insulator transition by Ru substitution, obtained from temperature dependence of resistivity measurements, indicates that the Ru substitution enhances the metallic state at low temperature regime and favours the Mn–Ru pairs in the Ru doped samples. Moreover, the activation energy values calculated from the temperature dependence of resistivity curves suggest that the Ru substitution weakens the formation of polarons. The increased magnetoresistance ratio from 108% to 136% by Ru substitution, measured at 5 K, points out that the Ru substitution also enhances the inter-grain tunneling magnetoresistance. Thus, the ferromagnetic order and metallic state in La{sub 1.24}Sr{sub 1.76}Mn{sub 2}O{sub 7} system have been enhanced by the presence of Ru in the Mn-site. These reinforcements of ferromagnetic metallic state and magnetoresistance have been interpreted by the ferromagnetically coupled high spin states of Ru with Mn ions in the Mn–O–Ru network.« less

Engineering magnetism at functional oxides interfaces: manganites and beyond

NASA Astrophysics Data System (ADS)

Yi, Di; Lu, Nianpeng; Chen, Xuegang; Shen, Shengchun; Yu, Pu

2017-11-01

The family of transition metal oxides (TMOs) is a large class of magnetic materials that has been intensively studied due to the rich physics involved as well as the promising potential applications in next generation electronic devices. In TMOs, the spin, charge, orbital and lattice are strongly coupled, and significant advances have been achieved to engineer the magnetism by different routes that manipulate these degrees of freedom. The family of manganites is a model system of strongly correlated magnetic TMOs. In this review, using manganites thin films and the heterostructures in conjunction with other TMOs as model systems, we review the recent progress of engineering magnetism in TMOs. We first discuss the role of the lattice that includes the epitaxial strain and the interface structural coupling. Then we look into the role of charge, focusing on the interface charge modulation. Having demonstrated the static effects, we continue to review the research on dynamical control of magnetism by electric field. Next, we review recent advances in heterostructures comprised of high T c cuprate superconductors and manganites. Following that, we discuss the emergent magnetic phenomena at interfaces between 3d TMOs and 5d TMOs with strong spin-orbit coupling. Finally, we provide our outlook for prospective future directions.

Structural insight of the charge-ordering phenomena in manganites

NASA Astrophysics Data System (ADS)

Garcia, Joaquin

2005-03-01

Recent experiments using x-ray absorption spectroscopy (XAS) and x-ray resonant scattering (XRS) techniques show that the conventional description of the so-called charge ordering phases of manganites in terms of Mn^3+/Mn^4+ ionic ordering is far from reality. I present here the XRS study of the low temperature phase of Nd0.5Sr0.5MnO3 manganite. Strong resonances are observed in the energy dependent spectra of (300), (030) and (05/20) reflections. Their azimuthal and polarization dependencies are well explained by the anisotropy of the local geometrical structure. Two different Mn sites were found. One of them is surrounded by a tetragonal distorted oxygen octahedron, whereas the other site has a nearly regular octahedral environment. The charge separation between the intermediate valence states is less than 0.2 e-. The analysis performed resolves some of the apparent contradictions with previous XRS and XAS experiments in manganites. These results joined to those recently obtained on the Verwey transition in magnetite indicate that the electronic states in transition-metal oxides need to be described in terms of band states instead of localized ones. Colaborators: G. Sub'ias, J. Blasco, M. G. Proietti, M. S'anchez and J. Herrero-Martin

Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

PubMed

Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

2017-09-06

The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

Characteristic features of the magnetoresistance in the ferrimagnetic (Sr2FeMoO6-δ) - dielectric (SrMoO4) nanocomposite

NASA Astrophysics Data System (ADS)

Demyanov, S.; Kalanda, N.; Yarmolich, M.; Petrov, A.; Lee, S.-H.; Yu, S.-C.; Oh, S. K.; Kim, D.-H.

2018-05-01

Magnetic metal-oxide compounds with high values of magnetoresistance (MR) have attracted huge interest for spintronic applications, among which Sr2FeMoO6-δ (SFMO) has been relatively less known compared to the cobaltites and manganites, despite 100% electrons spin-polarization degree and a high Curie temperature. Here, stable fabrication and systematic analysis of nanocomposites based on SFMO with SrMoO4 dielectric sheaths are presented. SFMO-SrMoO4 nanocomposites were fabricated as follows: synthesis of the SFMO single-phase nanopowders by the modified citrate-gel technique; compaction under high pressure; thermal treatment for sheaths formation around grains. The nanocomposite is observed to exhibit a transitional behavior of conductivity from metallic, which is characteristic for the SFMO to semiconductor one in the temperature range 4 - 300K under magnetic fields up to 10T. A negative MR is observed due to the spin-polarized charge carriers tunneling through dielectric sheaths. MR value reaches 43% under 8T at 10κ. The dielectric sheaths thickness was determined to be about 10 nm by electric breakdown voltage value at current-voltage characteristics curves. The breakdown is found to be a reversible process determined by collisional ionization of dielectric atoms in strong electric field depending on knocked-out electrons from the SrMoO4. It was found that MR changes sign in electric breakdown region, revealing the giant magnetoresistive properties.

Fine mist versus large droplets in phase separated manganites

NASA Astrophysics Data System (ADS)

Khomskii, D.; Khomskii, L.

2003-02-01

The properties of phase-separated systems, e.g., manganites close to a first-order phase transition between charge-ordered insulator and ferromagnetic metal, are usually described by percolation picture. We argue that the correlated occupation of metallic sites leads to the preferential formation of larger metallic clusters, and their size distribution depends on the thermal history. This can explain several puzzling effects in manganites, such as the often observed inverse, or “overshot” hysteresis, and the recently discovered thermal cycling effect. Thus in treating this and similar systems in percolation picture, not only the total concentration of metallic phase, but also the distribution of metallic clusters by shape and size may significantly influence the properties of the system and has to be taken into account.

Magnetoresistance enhancement in Gd- Y bilayers

NASA Astrophysics Data System (ADS)

Freitas, P. P.; From, M.; Melo, L. V.; Plaskett, T. S.

1991-02-01

Gd-Y-Gd bilayers were prepared that show a magnetoresistance enhancement when the non-magnetic Y layer separations is 11 or 32 Å. This oscillatory behavior of the magnetoresistance versus Y thickness is tentatively related to oscillations in the interlayer coupling.

Evolution and control of the phase competition morphology in a manganite film

NASA Astrophysics Data System (ADS)

Zhou, Haibiao; Wang, Lingfei; Hou, Yubin; Huang, Zhen; Lu, Qingyou; Wu, Wenbin

2015-11-01

The competition among different phases in perovskite manganites is pronounced since their energies are very close under the interplay of charge, spin, orbital and lattice degrees of freedom. To reveal the roles of underlying interactions, many efforts have been devoted towards directly imaging phase transitions at microscopic scales. Here we show images of the charge-ordered insulator (COI) phase transition from a pure ferromagnetic metal with reducing field or increasing temperature in a strained phase-separated manganite film, using a home-built magnetic force microscope. Compared with the COI melting transition, this reverse transition is sharp, cooperative and martensitic-like with astonishingly unique yet diverse morphologies. The COI domains show variable-dimensional growth at different temperatures and their distribution can illustrate the delicate balance of the underlying interactions in manganites. Our findings also display how phase domain engineering is possible and how the phase competition can be tuned in a controllable manner.

Evolution and control of the phase competition morphology in a manganite film.

PubMed

Zhou, Haibiao; Wang, Lingfei; Hou, Yubin; Huang, Zhen; Lu, Qingyou; Wu, Wenbin

2015-11-25

The competition among different phases in perovskite manganites is pronounced since their energies are very close under the interplay of charge, spin, orbital and lattice degrees of freedom. To reveal the roles of underlying interactions, many efforts have been devoted towards directly imaging phase transitions at microscopic scales. Here we show images of the charge-ordered insulator (COI) phase transition from a pure ferromagnetic metal with reducing field or increasing temperature in a strained phase-separated manganite film, using a home-built magnetic force microscope. Compared with the COI melting transition, this reverse transition is sharp, cooperative and martensitic-like with astonishingly unique yet diverse morphologies. The COI domains show variable-dimensional growth at different temperatures and their distribution can illustrate the delicate balance of the underlying interactions in manganites. Our findings also display how phase domain engineering is possible and how the phase competition can be tuned in a controllable manner.

Influence of the K+ ions and the superstoichiometric manganese on structure defects, magneto-transport and dielectric properties of magnetoresistive La0.7Ca0.3-xKxMn1+xO3-δ ceramic

NASA Astrophysics Data System (ADS)

Liedienov, N. A.; Pashchenko, A. V.; Pashchenko, V. P.; Prokopenko, V. K.; Tatarchuk, D. D.; Revenko, Yu. F.; Turchenko, V. A.; Burchovetskii, V. V.; Sycheva, V. Ya.; Sil'cheva, A. G.; Didenko, Yu. V.; Levchenko, G. G.

2017-09-01

The structure, its defects, nanostructural clustering and functional properties of the La0.7Ca0.3-xKxMn1+xO3-δ ceramic with x = 0-0.3 have been investigated by x-ray diffraction, thermogravimetric, SEM, resistance, magnetic, magnetoresistance and dielectric spectroscopy methods. We establish that the lattice parameter of the cubic structure increases when the Ca2+ ions are substituted with ions of K+. We show that the real perovskite structure contains different valence states of manganese MnA2 +,MnB3 + and MnB4 + in A- and B-positions, as well as vacancy type point defects, in the form of anionic V(a) and cationic V(c) vacancies. The increase in the content of the superstoichiometric manganese is connected to the nanostructured clustering process. We find that K+ and superstoichiometric manganese cause the increase in relative permittivity ɛ' and dielectric loss tangent angle tg δ. The experimental phase diagram of the magnetic state has been constructed and allows determining the composition of the magnetoresistant La0.7Ca0.3-xKxMn1+xO3-δ ceramics with set magnetotransport properties. The optimal La0.7Ca0.3-xKxMn1+xO3-δ composition showing the highest magnetoresistance effect at room temperature has been determined by comparing the functional properties of lanthanum-calcium, lanthanum-strontium and lanthanum-calcium-potassium manganites.

Multimodal Responses of Self-Organized Circuitry in Electronically Phase Separated Materials

DOE PAGES

Herklotz, Andreas; Guo, Hangwen; Wong, Anthony T.; ...

2016-07-13

When confining an electronically phase we separated manganite film to the scale of its coexisting self-organized metallic and these insulating domains allows resistor-capacitor circuit-like responses while providing both electroresistive and magnetoresistive switching functionality.

Large magnetoresistance by Pauli blockade in hydrogenated graphene

NASA Astrophysics Data System (ADS)

Guillemette, J.; Hemsworth, N.; Vlasov, A.; Kirman, J.; Mahvash, F.; Lévesque, P. L.; Siaj, M.; Martel, R.; Gervais, G.; Studenikin, S.; Sachrajda, A.; Szkopek, T.

2018-04-01

We report the observation of a giant positive magnetoresistance in millimeter-scale hydrogenated graphene with the magnetic field oriented in the plane of the graphene sheet. A positive magnetoresistance in excess of 200% at a temperature of 300 mK was observed in this configuration, reverting to negative magnetoresistance with the magnetic field oriented normal to the graphene plane. We attribute the observed positive in-plane magnetoresistance to a Pauli blockade of hopping conduction induced by spin polarization. Our Rapid Communication shows that spin polarization in concert with electron-electron interaction can play a dominant role in magnetotransport within an atomic monolayer.

Ag-doped manganite nanoparticles: new materials for temperature-controlled medical hyperthermia.

PubMed

Melnikov, O V; Gorbenko, O Yu; Markelova, M N; Kaul, A R; Atsarkin, V A; Demidov, V V; Soto, C; Roy, E J; Odintsov, B M

2009-12-15

The purpose of this study was to introduce newly synthesized nanomaterials as an alternative to superparamagnetic ironoxide based particles (SPIO) and thus to launch a new platform for highly controllable hyperthermia cancer therapy and imaging. The new material that forms the basis for this article is lanthanum manganite particles with silver ions inserted into the perovskite lattice: La(1-x)Ag(x)MnO(3+delta). Adjusting the silver doping level, it is possible to control the Curie temperature (T(c)) in the hyperthermia range of interest (41-44 degrees C). A new class of nanoparticles based on silver-doped manganites La(1-x)Ag(x)MnO(3+delta) is suggested. New nanoparticles are stable, and their properties were not affected by the typical ambient conditions in the living tissue. It is possible to monitor the particle uptake and retention by MRI. When these particles are placed into an alternating magnetic field, their temperature increases to the definite value near T(c) and then remains constant if the magnetic field is maintained. During the hyperthermia procedure, the temperature can be restricted, thereby preventing the necrosis of normal tissue. A new class of nanoparticles based on silver-doped manganites La(1-x)Ag(x)MnO(3+delta) was suggested. Ag-doped perovskite manganites particles clearly demonstrated the effect of adjustable Curie temperature necessary for highly controllable cellular hyperthermia. The magnetic relaxation properties of the particles are comparable with that of SPIO, and so we were able to monitor the particle movement and retention by MRI. Thus, the new material combines the MRI contrast enhancement capability with targeted hyperthermia treatment.

Systematic study of doping dependence on linear magnetoresistance in p-PbTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.

2014-10-20

We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF{sub 2} exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30 T. The linear magnetoresistance slope ΔR/ΔB is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linearmore » magnetoresistance response has a maximum for small BaF{sub 2} doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.« less

Superconductor to Mott insulator transition in YBa2Cu3O7/LaCaMnO3 heterostructures.

PubMed

Gray, B A; Middey, S; Conti, G; Gray, A X; Kuo, C-T; Kaiser, A M; Ueda, S; Kobayashi, K; Meyers, D; Kareev, M; Tung, I C; Liu, Jian; Fadley, C S; Chakhalian, J; Freeland, J W

2016-09-15

The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high Tc superconductor YBa2Cu3O7 (YBCO) and colossal magnetoresistance ferromagnet La0.67Ca0.33MnO3 (LCMO). By using linearly polarized resonant X-ray absorption spectroscopy and magnetic circular dichroism, combined with hard X-ray photoelectron spectroscopy, we derived a complete picture of the interfacial carrier doping in cuprate and manganite atomic layers, leading to the transition from superconducting to an unusual Mott insulating state emerging with the increase of LCMO layer thickness. In addition, contrary to the common perception that only transition metal ions may respond to the charge transfer process, we found that charge is also actively compensated by rare-earth and alkaline-earth metal ions of the interface. Such deterministic control of Tc by pure electronic doping without any hindering effects of chemical substitution is another promising route to disentangle the role of disorder on the pseudo-gap and charge density wave phases of underdoped cuprates.

Colossal permittivity behavior and its origin in rutile (Mg1/3Ta2/3)xTi1-xO2.

PubMed

Dong, Wen; Chen, Dehong; Hu, Wanbiao; Frankcombe, Terry J; Chen, Hua; Zhou, Chao; Fu, Zhenxiao; Wei, Xiaoyong; Xu, Zhuo; Liu, Zhifu; Li, Yongxiang; Liu, Yun

2017-08-30

This work investigates the synthesis, chemical composition, defect structures and associated dielectric properties of (Mg 2+ , Ta 5+ ) co-doped rutile TiO 2 polycrystalline ceramics with nominal compositions of (Mg 2+ 1/3 Ta 5+ 2/3 ) x Ti 1-x O 2 . Colossal permittivity (>7000) with a low dielectric loss (e.g. 0.002 at 1 kHz) across a broad frequency/temperature range can be achieved at x = 0.5% after careful optimization of process conditions. Both experimental and theoretical evidence indicates such a colossal permittivity and low dielectric loss intrinsically originate from the intragrain polarization that links to the electron-pinned [Formula: see text] defect clusters with a specific configuration, different from the defect cluster form previously reported in tri-/pent-valent ion co-doped rutile TiO 2 . This work extends the research on colossal permittivity and defect formation to bi-/penta-valent ion co-doped rutile TiO 2 and elucidates a likely defect cluster model for this system. We therefore believe these results will benefit further development of colossal permittivity materials and advance the understanding of defect chemistry in solids.

Origin of nonsaturating linear magnetoresistivity

NASA Astrophysics Data System (ADS)

Kisslinger, Ferdinand; Ott, Christian; Weber, Heiko B.

2017-01-01

The observation of nonsaturating classical linear magnetoresistivity has been an enigmatic phenomenon in solid-state physics. We present a study of a two-dimensional ohmic conductor, including local Hall effect and a self-consistent consideration of the environment. An equivalent-circuit scheme delivers a simple and convincing argument why the magnetoresistivity is linear in strong magnetic field, provided that current and biasing electric field are misaligned by a nonlocal mechanism. A finite-element model of a two-dimensional conductor is suited to display the situations that create such deviating currents. Besides edge effects next to electrodes, charge carrier density fluctuations are efficiently generating this effect. However, mobility fluctuations that have frequently been related to linear magnetoresistivity are barely relevant. Despite its rare observation, linear magnetoresitivity is rather the rule than the exception in a regime of low charge carrier densities, misaligned current pathways and strong magnetic field.

High speed magneto-resistive random access memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

1992-01-01

A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

Recrystallization of Manganite (γ-MnOOH) and Implications for Trace Element Cycling.

PubMed

Hens, Tobias; Brugger, Joël; Cumberland, Susan A; Etschmann, Barbara; Frierdich, Andrew J

2018-02-06

The recrystallization of Mn(III,IV) oxides is catalyzed by aqueous Mn(II) (Mn(II) aq ) during (bio)geochemical Mn redox cycling. It is poorly understood how trace metals associated with Mn oxides (e.g., Ni) are cycled during such recrystallization. Here, we use X-ray absorption spectroscopy (XAS) to examine the speciation of Ni associated with Manganite (γ-Mn(III)OOH) suspensions in the presence or absence of Mn(II) aq under variable pH conditions (pH 5.5 and 7.5). In a second set of experiments, we used a 62 Ni isotope tracer to quantify the amount of dissolved Ni that exchanges with Ni incorporated in the Manganite crystal structure during reactions in 1 mM Mn(II) aq and in Mn(II)-free solutions. XAS spectra show that Ni is initially sorbed on the Manganite mineral surface and is progressively incorporated into the mineral structure over time (13% after 51 days) even in the absence of dissolved Mn(II). The amount of Ni incorporation significantly increases to about 40% over a period of 51 days when Mn(II) aq is present in solution. Similarly, Mn(II) aq promotes Ni exchange between Ni-substituted Manganite and dissolved Ni(II), with around 30% of Ni exchanged at pH 7.5 over the duration of the experiment. No new mineral phases are detected following recrystallization as determined by X-ray diffraction and XAS. Our results reveal that Mn(II)-catalyzed mineral recrystallization partitions Ni between Mn oxides and aqueous fluids and can therefore affect Ni speciation and mobility in the environment.

Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor chromium arsenide

NASA Astrophysics Data System (ADS)

Niu, Q.; Yu, W. C.; Yip, K. Y.; Lim, Z. L.; Kotegawa, H.; Matsuoka, E.; Sugawara, H.; Tou, H.; Yanase, Y.; Goh, Swee K.

2017-06-01

In conventional metals, modification of electron trajectories under magnetic field gives rise to a magnetoresistance that varies quadratically at low field, followed by a saturation at high field for closed orbits on the Fermi surface. Deviations from the conventional behaviour, for example, the observation of a linear magnetoresistance, or a non-saturating magnetoresistance, have been attributed to exotic electron scattering mechanisms. Recently, linear magnetoresistance has been observed in many Dirac materials, in which the electron-electron correlation is relatively weak. The strongly correlated helimagnet CrAs undergoes a quantum phase transition to a nonmagnetic superconductor under pressure. Here we observe, near the magnetic instability, a large and non-saturating quasilinear magnetoresistance from the upper critical field to 14 T at low temperatures. We show that the quasilinear magnetoresistance may arise from an intricate interplay between a nontrivial band crossing protected by nonsymmorphic crystal symmetry and strong magnetic fluctuations.

Role of antimony in the charge transport mechanisms for La0.67Ca0.33Mn1-xSbxO3 manganites

NASA Astrophysics Data System (ADS)

Kataria, B. R.; Solanki, Pankaj; Pandya, D. D.; Solanki, P. S.; Shah, N. A.

2018-07-01

Single phasic La0.67Ca0.33Mn1-xSbxO3 (LCMSO; x = 0.00, 0.02, 0.04, 0.06, 0.08 and 0.10) samples were characterized by performing temperature and magnetic field dependent resistance measurements. Present study, mainly, aims for the better understanding of possible charge conduction mechanisms responsible for the low temperature resistivity and high temperature [well above metal to insulator transition temperature (TP)] semiconducting regions. Variation in resistivity and TP with Sb5+ content (x) and applied magnetic field has been discussed in the light of the modifications in structural and magnetic lattices of smaller diamagnetic Sb5+ doped LCMSO system. Various models and mechanisms have been theoretical employed to fit obtained experimental resistivity data for the low temperature resistivity and semiconducting regions of all LCMSO manganites. It is found that low temperature resistivity minima follows the coulomb blockade model while charge conduction in the semiconducting region obeys the variable range hopping (VRH) mechanism. Variation in low temperature blocking energy, activation energy in semiconducting region and magnetoresistance (MR) with Sb5+ content (x) and applied magnetic field has been discussed in detail.

Impact of Magneto-Electric Materials and Devices on Tactical Radio (and Radar)

DTIC Science & Technology

2007-04-01

and frequency dependent variable permittivity in a single device • Magnetic properties controlled by electric field. The goals of the seedling...such as HoMnO3) and composites (such as PZT- Terfenol-D). Other possible candidate materials are thought to include colossal magnetoresistive oxides

Angle-Dependent Magnetoresistance in Organic Metals

NASA Astrophysics Data System (ADS)

Blundell, Stephen J.; Singleton, John

1996-12-01

Recent experimental studies of the angle-dependent magnetoresistance in various organic metals have been remarkably successful in elucidating the nature of the low-temperature ground state and providing information about the Fermi surface shape which is hard or impossible to obtain using other techniques. We review various theoretical approaches to describe angel-dependent magnetoresistance and a number of important experimental results which have been obtained.

Recent Developments of Magnetoresistive Sensors for Industrial Applications

PubMed Central

Jogschies, Lisa; Klaas, Daniel; Kruppe, Rahel; Rittinger, Johannes; Taptimthong, Piriya; Wienecke, Anja; Rissing, Lutz; Wurz, Marc Christopher

2015-01-01

The research and development in the field of magnetoresistive sensors has played an important role in the last few decades. Here, the authors give an introduction to the fundamentals of the anisotropic magnetoresistive (AMR) and the giant magnetoresistive (GMR) effect as well as an overview of various types of sensors in industrial applications. In addition, the authors present their recent work in this field, ranging from sensor systems fabricated on traditional substrate materials like silicon (Si), over new fabrication techniques for magnetoresistive sensors on flexible substrates for special applications, e.g., a flexible write head for component integrated data storage, micro-stamping of sensors on arbitrary surfaces or three dimensional sensing under extreme conditions (restricted mounting space in motor air gap, high temperatures during geothermal drilling). PMID:26569263

Ultrafast structural and electronic dynamics of the metallic phase in a layered manganite

PubMed Central

Piazza, L.; Ma, C.; Yang, H. X.; Mann, A.; Zhu, Y.; Li, J. Q.; Carbone, F.

2013-01-01

The transition between different states in manganites can be driven by various external stimuli. Controlling these transitions with light opens the possibility to investigate the microscopic path through which they evolve. We performed femtosecond (fs) transmission electron microscopy on a bi-layered manganite to study its response to ultrafast photoexcitation. We show that a photoinduced temperature jump launches a pressure wave that provokes coherent oscillations of the lattice parameters, detected via ultrafast electron diffraction. Their impact on the electronic structure are monitored via ultrafast electron energy loss spectroscopy, revealing the dynamics of the different orbitals in response to specific structural distortions. PMID:26913564

Positive magnetoresistance effect in rare earth cobaltites

NASA Astrophysics Data System (ADS)

Troyanchuk, I. O.; Bushinskii, M. V.; Karpinsky, D. V.; Dobryanskii, V. M.; Sikolenko, V. V.; Balagurov, A. M.

2009-06-01

The structure, magnetic, and magnetotransport properties of the Pr0.5Sr0.5Co1 - x Fe x O3 system have been studied. The ferromagnet-spin glass ( x = 0.5)- G-type antiferromagnet ( x = 0.7) transitions and the metal—insulator transitions ( x = 0.25) have been revealed. It has been established that the magnetoresistance of the metallic ferromagnetic cobaltites changes sign from positive to negative as the external magnetic field increases. The positive component increases and the negative component decreases with decreasing temperature. The negative magnetoresistance increases sharply in the insulating spinglass phase. Possible causes of the low-magnetic-field positive magnetoresistance in the rare earth metallic cobaltites are discussed.

Colossal Dielectric Behavior of Ga+Nb Co-Doped Rutile TiO2.

PubMed

Dong, Wen; Hu, Wanbiao; Berlie, Adam; Lau, Kenny; Chen, Hua; Withers, Ray L; Liu, Yun

2015-11-18

Stimulated by the excellent colossal permittivity (CP) behavior achieved in In+Nb co-doped rutile TiO2, in this work we investigate the CP behavior of Ga and Nb co-doped rutile TiO2, i.e., (Ga(0.5)Nb(0.5))(x)Ti(1-x)O2, where Ga(3+) is from the same group as In(3+) but with a much smaller ionic radius. Colossal permittivity of up to 10(4)-10(5) with an acceptably low dielectric loss (tan δ = 0.05-0.1) over broad frequency/temperature ranges is obtained at x = 0.5% after systematic synthesis optimizations. Systematic structural, defect, and dielectric characterizations suggest that multiple polarization mechanisms exist in this system: defect dipoles at low temperature (∼10-40 K), polaronlike electron hopping/transport at higher temperatures, and a surface barrier layer capacitor effect. Together these mechanisms contribute to the overall dielectric properties, especially apparent observed CP. We believe that this work provides comprehensive guidance for the design of new CP materials.

Effect of quantum tunneling on spin Hall magnetoresistance

NASA Astrophysics Data System (ADS)

Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

2017-02-01

We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y3Fe5O12) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

Large magnetoresistance and sharp switching in FexTiS2

NASA Astrophysics Data System (ADS)

Choe, Jesse; Morosan, Emilia

Large magnetoresistance materials are suitable for applications in sensors, read heads, and random access memories. Most metals, though having excellent ductility which is important for manufacturing processes, have changes of magnetoresistance on the order of only 1 % . Very large magnetoresistances in Fe0.30TaS2 ( 140 %) have been attributed to misalignment of magnetic moments causing spin disorder scattering. We performed measurements of the magnetic field dependence of resistivity and magnetization of FexTiS2 single crystals (x = 0 . 1 - 0 . 5), which show both the large magnetoresistance, as well as the sharp switching in magnetization as those reported in the Ta analogue. By comparing and contrasting these two materials, we can gain deeper understanding of the underlying physics, allowing us to strategically search for materials with higher transition temperature, lower switching fields, and larger magnetoresistances. NSF DMREF 1629374.

Emerging single-phase state in small manganite nanodisks

DOE PAGES

Shao, Jian; Liu, Hao; Zhang, Kai; ...

2016-08-01

In complex oxides systems such as manganites, electronic phase separation (EPS), a consequence of strong electronic correlations, dictates the exotic electrical and magnetic properties of these materials. A fundamental yet unresolved issue is how EPS responds to spatial confinement; will EPS just scale with size of an object, or will the one of the phases be pinned? Understanding this behavior is critical for future oxides electronics and spintronics because scaling down of the system is unavoidable for these applications. In this work, we use La 0.325Pr 0.3Ca 0.375MnO 3 (LPCMO) single crystalline disks to study the effect of spatial confinementmore » on EPS. The EPS state featuring coexistence of ferromagnetic metallic and charge order insulating phases appears to be the low-temperature ground state in bulk, thin films, and large disks, a previously unidentified ground state (i.e., a single ferromagnetic phase state emerges in smaller disks). The critical size is between 500 nm and 800 nm, which is similar to the characteristic length scale of EPS in the LPCMO system. The ability to create a pure ferromagnetic phase in manganite nanodisks is highly desirable for spintronic applications.« less

Silica-coated manganite and Mn-based ferrite nanoparticles: a comparative study focused on cytotoxicity

NASA Astrophysics Data System (ADS)

Kaman, Ondřej; Dědourková, Tereza; Koktan, Jakub; Kuličková, Jarmila; Maryško, Miroslav; Veverka, Pavel; Havelek, Radim; Královec, Karel; Turnovcová, Karolína; Jendelová, Pavla; Schröfel, Adam; Svoboda, Ladislav

2016-04-01

Magnetic oxide nanoparticles provide a fascinating tool for biological research and medicine, serving as contrast agents, magnetic carriers, and core materials of theranostic systems. Although the applications rely mostly on iron oxides, more complex oxides such as perovskite manganites may provide a much better magnetic performance. To assess the risk of their potential use, in vitro toxicity of manganite nanoparticles was thoroughly analysed and compared with another prospective system of Mn-Zn ferrite nanoparticles. Magnetic nanoparticles of La0.63Sr0.37MnO3 manganite were prepared by two distinct methods, namely the molten salt synthesis and the traditional sol-gel route, whereas nanoparticles of Mn0.61Zn0.42Fe1.97O4 ferrite, selected as a comparative material, were synthesized by a new procedure under hydrothermal conditions. Magnetic cores were coated with silica and, moreover, several samples of manganite nanoparticles with different thicknesses of silica shell were prepared. The size-fractionated and purified products were analysed using transmission electron microscopy, dynamic light scattering, measurement of the zeta-potential dependence on pH, IR spectroscopy, and SQUID magnetometry. The silica-coated products with accurately determined concentration by atomic absorption spectroscopy were subjected to a robust evaluation of their cytotoxicity by four different methods, including detailed analysis of the concentration dependence of toxicity, analysis of apoptosis, and experiments on three different cell lines. The results, comparing two manganese-containing systems, clearly indicated superior properties of the Mn-Zn ferrite, whose silica-coated nanoparticles show very limited toxic effects and thus constitute a promising material for bioapplications.

Spin-controlled negative magnetoresistance resulting from exchange interactions

NASA Astrophysics Data System (ADS)

Agrinskaya, N. V.; Kozub, V. I.; Mikhailin, N. Yu.; Shamshur, D. V.

2017-04-01

We studied conductivity of AlGaAs-GaAs quantum well structures (where centers of the wells were doped by Be) at temperatures higher than 4 K in magnetic fields up 10 T. Throughout all the temperature region considered the conductivity demonstrated activated behavior. At moderate magnetic fields 0.1 T < H < 1 T, we observed negative isotropic magnetoresistance, which was linear in magnetic field while for magnetic field normal with respect to the plane of the wells the magnetoresistance was positive at H > 2T. To the best of our knowledge, it was the first observation of linear negative magnetoresistance, which would be isotropic with respect to the direction of magnetic field. While the isotropic character of magnetoresistance apparently evidences role of spins, the existing theoretical considerations concerning spin effects in conductance fail to explain our experimental results. We believe that such a behavior can be attributed to spin effects supported by exchange interactions between localized states.

Magnetoresistance in Permalloy Connected Brickwork Artificial Spin Ice

NASA Astrophysics Data System (ADS)

Park, Jungsik; Le, Brian; Chern, Gia-Wei; Watts, Justin; Leighton, Chris; Schiffer, Peter

Artificial spin ice refers to a two-dimensional array of elongated ferromagnetic elements in which frustrated lattice geometry induces novel magnetic behavior. Here we examine room-temperature magnetoresistance properties of connected permalloy (Ni81Fe19) brickwork artificial spin ice. Both the longitudinal and transverse magnetoresistance of the nanostructure demonstrate an angular sensitivity that has not been previously observed. The observed magnetoresistance behavior can be explained from micromagnetic modelling using an anisotropic magnetoresistance model (AMR). As part of this study, we find that the ground state of the connected brickwork artificial spin ice can be reproducibly created by a simple field sweep in a narrow range of angles, and manifests in the magnetotransport with a distinct signal. Supported by the US Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under Grant Number DE-SC0010778. Work at the University of Minnesota was supported by the NSF MRSEC under award DMR-1420013, and DMR-1507048.

The Anomalous Magnetoresistance of Graphite at High Magnetic Fields,

DTIC Science & Technology

1983-05-01

magnetoresistance anomaly. In the present work, the unusual properties of this fine structure (which is periodic in magnetic field H ) is examined in more detail...structure associated with the magnetoresistance anomly is (AH/ H ) - 0.1 T/25 T or about 0.4 Z. Thus, for typical magnetic field sweep rates (10 T in 10...magnetoresistance above 12 T have been associated by lye at al.2 with a linear increase in carrier concentration with increasing H .1 The anomalous increase

Intrinsic Tunneling in Phase Separated Manganites

NASA Astrophysics Data System (ADS)

Singh-Bhalla, G.; Selcuk, S.; Dhakal, T.; Biswas, A.; Hebard, A. F.

2009-02-01

We present evidence of direct electron tunneling across intrinsic insulating regions in submicrometer wide bridges of the phase-separated ferromagnet (La,Pr,Ca)MnO3. Upon cooling below the Curie temperature, a predominantly ferromagnetic supercooled state persists where tunneling across the intrinsic tunnel barriers (ITBs) results in metastable, temperature-independent, high-resistance plateaus over a large range of temperatures. Upon application of a magnetic field, our data reveal that the ITBs are extinguished resulting in sharp, colossal, low-field resistance drops. Our results compare well to theoretical predictions of magnetic domain walls coinciding with the intrinsic insulating phase.

Organic magnetoresistance based on hopping theory

NASA Astrophysics Data System (ADS)

Yang, Fu-Jiang; Xie, Shi-Jie

2014-09-01

For the organic magnetoresistance (OMAR) effect, we suggest a spin-related hopping of carriers (polarons) based on Marcus theory. The mobility of polarons is calculated with the master equation (ME) and then the magnetoresistance (MR) is obtained. The theoretical results are consistent with the experimental observation. Especially, the sign inversion of the MR under different driving bias voltages found in the experiment is predicted. Besides, the effects of molecule disorder, hyperfine interaction (HFI), polaron localization, and temperature on the MR are investigated.

Electron-pinned defect-dipoles for high-performance colossal permittivity materials

NASA Astrophysics Data System (ADS)

Hu, Wanbiao; Liu, Yun; Withers, Ray L.; Frankcombe, Terry J.; Norén, Lasse; Snashall, Amanda; Kitchin, Melanie; Smith, Paul; Gong, Bill; Chen, Hua; Schiemer, Jason; Brink, Frank; Wong-Leung, Jennifer

2013-09-01

The immense potential of colossal permittivity (CP) materials for use in modern microelectronics as well as for high-energy-density storage applications has propelled much recent research and development. Despite the discovery of several new classes of CP materials, the development of such materials with the required high performance is still a highly challenging task. Here, we propose a new electron-pinned, defect-dipole route to ideal CP behaviour, where hopping electrons are localized by designated lattice defect states to generate giant defect-dipoles and result in high-performance CP materials. We present a concrete example, (Nb+In) co-doped TiO2 rutile, that exhibits a largely temperature- and frequency-independent colossal permittivity (> 104) as well as a low dielectric loss (mostly < 0.05) over a very broad temperature range from 80 to 450 K. A systematic defect analysis coupled with density functional theory modelling suggests that ‘triangular’ In23+VO••Ti3+ and ‘diamond’ shaped Nb25+Ti3+ATi (A  =  Ti3+/In3+/Ti4+) defect complexes are strongly correlated, giving rise to large defect-dipole clusters containing highly localized electrons that are together responsible for the excellent CP properties observed in co-doped TiO2. This combined experimental and theoretical work opens up a promising feasible route to the systematic development of new high-performance CP materials via defect engineering.

Electron-pinned defect-dipoles for high-performance colossal permittivity materials.

PubMed

Hu, Wanbiao; Liu, Yun; Withers, Ray L; Frankcombe, Terry J; Norén, Lasse; Snashall, Amanda; Kitchin, Melanie; Smith, Paul; Gong, Bill; Chen, Hua; Schiemer, Jason; Brink, Frank; Wong-Leung, Jennifer

2013-09-01

The immense potential of colossal permittivity (CP) materials for use in modern microelectronics as well as for high-energy-density storage applications has propelled much recent research and development. Despite the discovery of several new classes of CP materials, the development of such materials with the required high performance is still a highly challenging task. Here, we propose a new electron-pinned, defect-dipole route to ideal CP behaviour, where hopping electrons are localized by designated lattice defect states to generate giant defect-dipoles and result in high-performance CP materials. We present a concrete example, (Nb+In) co-doped TiO₂ rutile, that exhibits a largely temperature- and frequency-independent colossal permittivity (> 10(4)) as well as a low dielectric loss (mostly < 0.05) over a very broad temperature range from 80 to 450 K. A systematic defect analysis coupled with density functional theory modelling suggests that 'triangular' In₂(3+)Vo(••)Ti(3+) and 'diamond' shaped Nb₂(5+)Ti(3+)A(Ti) (A = Ti(3+)/In(3+)/Ti(4+)) defect complexes are strongly correlated, giving rise to large defect-dipole clusters containing highly localized electrons that are together responsible for the excellent CP properties observed in co-doped TiO₂. This combined experimental and theoretical work opens up a promising feasible route to the systematic development of new high-performance CP materials via defect engineering.

Surface Spin Glass Ordering and Exchange Bias in Nanometric Sm0.09Ca0.91MnO3 Manganites

NASA Astrophysics Data System (ADS)

Giri, S. K.; Nath, T. K.

2011-07-01

We have thoroughly investigated the entire magnetic state of under doped ferromagnetic insulating manganite Sm0.09Ca0.91MnO3 through temperature dependent linear and non-linear ac magnetic susceptibility and magnetization measurements. This ferromagnetic insulating manganite is found to have frequency dependent ferromagnetic to paramagnetic transition temperature at around 108 K. Exchange- bias effect are observed in field -cooled magnetic hysteresis loops for this nanoparticle. We have attributed our observation to the formation of ferromagnetic cluster which are formed as a consequence of intrinsic phase separation below certain temperature in this under doped manganites. We have carried out electronic- and magneto-transport measurements to support these observed results.

Superconductor to Mott insulator transition in YBa 2Cu 3O 7/LaCaMnO 3 heterostructures

DOE PAGES

Gray, B. A.; Middey, S.; Conti, G.; ...

2016-09-15

The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In this paper, in pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high Tc superconductor YBa 2Cu 3O 7 (YBCO) and colossal magnetoresistance ferromagnet La 0.67Ca 0.33MnO 3 (LCMO). By using linearly polarized resonant X-ray absorption spectroscopy and magnetic circular dichroism, combined with hard X-ray photoelectron spectroscopy, we derived a complete picture of the interfacial carrier doping inmore » cuprate and manganite atomic layers, leading to the transition from superconducting to an unusual Mott insulating state emerging with the increase of LCMO layer thickness. In addition, contrary to the common perception that only transition metal ions may respond to the charge transfer process, we found that charge is also actively compensated by rare-earth and alkaline-earth metal ions of the interface. Finally, such deterministic control of Tc by pure electronic doping without any hindering effects of chemical substitution is another promising route to disentangle the role of disorder on the pseudo-gap and charge density wave phases of underdoped cuprates.« less

Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts.

PubMed

Schöneberg, J; Otte, F; Néel, N; Weismann, A; Mokrousov, Y; Kröger, J; Berndt, R; Heinze, S

2016-02-10

Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin-orbit coupling. This work shows that engineering the AMR at the single atom level is feasible.

Large magnetoresistance in oxide based ferromagnet/superconductor spin switches.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pena, V.; Nemes, N.; Visani, C.

2006-01-01

We report large magnetoresistance (in excess of 1000%) in ferromagnet / superconductor / ferromagnet structures made of La{sub 0.7}Ca{sub 0.3}MnO{sub 3} and YBa{sub 2}Cu{sub 3}O{sub 7} in the current in plane (CIP) geometry. This magnetoresistance has many of the ingredients of the giant magnetoresistance of metallic superlattices: it is independent on the angle between current and magnetic field, depends on the relative orientation of the magnetization in the ferromagnetic layers, and takes very large values. The origin is enhanced scattering at the F/S interface in the anti parallel configuration of the magnetizations. Furthermore, we examine the dependence of the magnetoresistancemore » effect on the thickness of the superconducting layer, and show that the magnetoresistance dies out for thickness in excess of 30 nm, setting a length scale for the diffusion of spin polarized quasiparticles.« less

Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application.

PubMed

Liu, Pan; Lin, Xiaoyang; Xu, Yong; Zhang, Boyu; Si, Zhizhong; Cao, Kaihua; Wei, Jiaqi; Zhao, Weisheng

2017-12-28

The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect.

Perovskite-structure TlMnO₃: a new manganite with new properties.

PubMed

Yi, Wei; Kumagai, Yu; Spaldin, Nicola A; Matsushita, Yoshitaka; Sato, Akira; Presniakov, Igor A; Sobolev, Alexey V; Glazkova, Yana S; Belik, Alexei A

2014-09-15

We synthesize a new member of the AMnO3 perovskite manganite family (where A is a trivalent cation)--thallium manganite, TlMnO3--under high-pressure (6 GPa) and high-temperature (1500 K) conditions and show that the structural and magnetic properties are distinct from those of all other AMnO3 manganites. The crystal structure of TlMnO3 is solved and refined using single-crystal X-ray diffraction data. We obtain a triclinically distorted structure with space group P1̅ (No. 2), Z = 4, and lattice parameters a = 5.4248(2) Å, b = 7.9403(2) Å, c = 5.28650(10) Å, α = 87.8200(10)°, β = 86.9440(10)°, and γ = 89.3130(10)° at 293 K. There are four crystallographic Mn sites in TlMnO3 forming two groups based on the degree of their Jahn-Teller distortions. Physical properties of insulating TlMnO3 are investigated with Mössbauer spectroscopy and resistivity, specific heat, and magnetization measurements. The orbital ordering, which persists to the decomposition temperature of 820 K, suggests A-type antiferromagnetic ordering with the ferromagnetic planes along the [-101] direction, consistent with the measured collinear antiferromagnetism below the Néel temperature of 92 K. Hybrid density functional calculations are consistent with the experimentally identified structure, insulating ground state, and suggested magnetism, and show that the low symmetry originates from the strongly Jahn-Teller distorted Mn(3+) ions combined with the strong covalency of the Tl(3+)-O bonds.

Antiferromagnetic exchange and magnetoresistance enhancement in Co-Re superlattices

NASA Astrophysics Data System (ADS)

Freitas, P. P.; Melo, L. V.; Trindade, I.; From, M.; Ferreira, J.; Monteiro, P.

1992-02-01

Co-Re superlattices were prepared that show either antiferromagnetic or ferromagnetic coupling between the Co layers depending on the Re spacer thickness. Enhanced saturation magnetoresistance occurs for antiferromagnetically coupled layers. The saturation magnetoresistance decays exponentially with Re thickness but does not depend critically on the Co thickness.

Nonlinear electron-phonon coupling in doped manganites

DOE PAGES

Esposito, Vincent; Fechner, M.; Mankowsky, R.; ...

2017-06-15

Here, we employ time-resolved resonant x-ray diffraction to study the melting of charge order and the associated insulator-to-metal transition in the doped manganite Pr 0.5Ca 0.5MnO 3 after resonant excitation of a high-frequency infrared-active lattice mode. We find that the charge order reduces promptly and highly nonlinearly as function of excitation fluence. Density-functional theory calculations suggest that direct anharmonic coupling between the excited lattice mode and the electronic structure drives these dynamics, highlighting a new avenue of nonlinear phonon control.

Nonlinear Electron-Phonon Coupling in Doped Manganites.

PubMed

Esposito, V; Fechner, M; Mankowsky, R; Lemke, H; Chollet, M; Glownia, J M; Nakamura, M; Kawasaki, M; Tokura, Y; Staub, U; Beaud, P; Först, M

2017-06-16

We employ time-resolved resonant x-ray diffraction to study the melting of charge order and the associated insulator-to-metal transition in the doped manganite Pr_{0.5}Ca_{0.5}MnO_{3} after resonant excitation of a high-frequency infrared-active lattice mode. We find that the charge order reduces promptly and highly nonlinearly as function of excitation fluence. Density-functional theory calculations suggest that direct anharmonic coupling between the excited lattice mode and the electronic structure drives these dynamics, highlighting a new avenue of nonlinear phonon control.

Anomalous negative magnetoresistance of two-dimensional electrons

NASA Astrophysics Data System (ADS)

Kanter, Jesse; Vitkalov, Sergey; Bykov, A. A.

2018-05-01

Effects of temperature T (6-18 K) and variable in situ static disorder on dissipative resistance of two-dimensional electrons are investigated in GaAs quantum wells placed in a perpendicular magnetic-field B⊥. Quantum contributions to the magnetoresistance, leading to quantum positive magnetoresistance (QPMR), are separated by application of an in-plane magnetic field. QPMR decreases considerably with both the temperature and the static disorder and is in good quantitative agreement with theory. The remaining resistance R decreases with the magnetic field exhibiting an anomalous polynomial dependence on B⊥:[R (B⊥) -R (0 ) ] =A (T ,τq) B⊥η where the power is η ≈1.5 ±0.1 in a broad range of temperatures and disorder. The disorder is characterized by electron quantum lifetime τq. The scaling factor A (T ,τq) ˜[κ(τq) +β (τq) T2] -1 depends significantly on both τq and T where the first term κ ˜τq-1/2 decreases with τq. The second term is proportional to the square of the temperature and diverges with increasing static disorder. Above a critical disorder the anomalous magnetoresistance is absent, and only a positive magnetoresistance, exhibiting no distinct polynomial behavior with the magnetic field, is observed. The presented model accounts memory effects and yields η = 3/2.

Magnetoresistance in two-dimensional array of Ge/Si quantum dots

NASA Astrophysics Data System (ADS)

Stepina, N. P.; Koptev, E. S.; Pogosov, A. G.; Dvurechenskii, A. V.; Nikiforov, A. I.; Zhdanov, E. Yu

2012-07-01

Magnetoresistance in two-dimensional array of Ge/Si was studied for a wide range of the conductance, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is similar for all samples; it is negative in weak fields and becomes positive with increasing of magnetic field. Negative magnetoresistance can be described in the frame of weak localization approach with suggestion that quantum interference contribution to the conductance is restricted not only by the phase breaking length but also by the localization length.

Magnetoresistance behavior in nanobulk assembled Bi2Se3 topological insulator

NASA Astrophysics Data System (ADS)

Bera, Sumit; Behera, P.; Mishra, A. K.; Krishnan, M.; Patidar, Manju Mishra; Singh, Durgesh; Venkatesh, R.; Phase, D. M.; Ganesan, V.

2018-05-01

Temperature and magnetic field dependent magnetoresistance (MR) including structural, morphological studies of Bi2Se3 nanoflower like structure synthesized by microwave assisted solvothermal method has been investigated. Powder X-ray diffraction (XRD) has confirmed the formation of single phase. Morphology of the material shows nanoflower kind of structures with edge to edge size of around 4 µm and such occurrences are quite high. The temperature dependent resistance invokes a metallic behavior up to a certain lower temperature, below which it follows -ln(T) behavior that has been elucidated in literature using electron-electron interaction and weak anti-localization effects. High temperature magnetoresistance is consistent with parabolic field dependence indicating a classical magnetoresistance in metals as a result of Lorenz force. In low temperature regime magnetoresistance as a function of magnetic field at different temperatures obeys power law near low field which indicates a three dimensional weak-antilocalization. A linear magnetoresistance at low temperature and high magnetic field shows the domination of surface state conduction.

Giant magnetoresistance in perpendicularly magnetized synthetic antiferromagnetic coupling with Ir spacer

NASA Astrophysics Data System (ADS)

Fukushima, A.; Taniguchi, T.; Sugihara, A.; Yakushiji, K.; Kubota, H.; Yuasa, S.

2018-05-01

Perpendicularly magnetized magnetic tunnel junction (p-MTJ) is a key element for developing high-density spin-transfer torque switching magnetoresistive random access memory. Recently, a large exchange coupling (IEC) in the synthetic antiferromagnetic reference layer with Ir interlayer was observed in p-MTJs. The evaluation of the IEC is, however, difficult due to the electrostatic breakdown of MTJs. This study demonstrates the evaluation of the IEC with Ir interlayer in giant magnetoresistive (GMR) nanopillar. We fabricated three kinds of perpendicularly magnetized GMR elements; bottom-free structures with Cu or Ir spacer, and top-free structure with Ir spacer. The magnetoresistance (RH) loops of all samples show sharp changes of the magnetoresistance at the magnetic fields over ±10 kOe, indicating the existence of the large IECs. In particular, a sharp change of the magnetoresistance at the field over ±20 kOe was found for the element with Cu of 2 nm thickness.

Giant oscillating magnetoresistance in silicene-based structures

NASA Astrophysics Data System (ADS)

Oubram, O.; Navarro, O.; Rodríguez-Vargas, I.; Guzman, E. J.; Cisneros-Villalobos, L.; Velásquez-Aguilar, J. G.

2018-02-01

Ballistic electron transport in a silicene structure, composed of a pair of magnetic gates, in the ferromagnetic and an-tiferromagnetic configuration is studied. This theoretical study has been done using the matrix transfer method to calculate the transmission, the conductance for parallel and antiparallel magnetic alignment and the magnetoresistance. Results show that conductance and magnetoresistance oscillate as a function of the length between the two magnetic domains. The forbidden transmission region also increases as a function of the barrier separation distance.

Magnetocaloric effect in potassium doped lanthanum manganite perovskites prepared by a pyrophoric method

NASA Astrophysics Data System (ADS)

Das, Soma; Dey, T. K.

2006-08-01

The magnetocaloric effect (MCE) in fine grained perovskite manganites of the type La1-xKxMnO3 (0manganite enhances the Curie temperature (TC) of the system from 260.4 K (x = 0.05) to 309.7 K (x = 0.15). A large magnetic entropy change associated with the ferromagnetic-paramagnetic transition has been observed. The maximum entropy change |ΔSMMax| in an applied field of 1 T shows an enhancement by ~10% with increase in K content up to x = 0.15. La0.85K0.15MnO3 exhibits the largest |ΔSMMax| value of 3.00 J kg-1 K-1 at 310 K amongst the compounds investigated. Moreover, the maximum magnetic entropy change exhibits a linear dependence with applied magnetic field. The estimated adiabatic temperature change at TC and at 1 T field also increases with K doping, being a maximum of 2.1 K for the La0.85K0.15MnO3 compound. The relative cooling power (RCP) of La1-xKxMnO3 compounds is estimated to be about one-third of that of the prototype magnetic refrigerant material (pure Gd). However, La1-xKxMnO3 compounds possess an MCE around room temperature, which is comparable to that of Gd. Further, tailoring of their TC, higher chemical stability, lower eddy current heating and lower cost of synthesis are some of the attractive features of K doped lanthanum manganites that are advantageous for a magnetic refrigerant. The temperature dependence of the magnetic entropy change (ΔSM) measured under various magnetic fields is explained fairly well using the Landau theory of phase transitions. Contributions of magnetoelastic and electron interaction are found to have a strong influence in the magnetocaloric effect of manganites.

Colossal Tooling Design: 3D Simulation for Ergonomic Analysis

NASA Technical Reports Server (NTRS)

Hunter, Steve L.; Dischinger, Charles; Thomas, Robert E.; Babai, Majid

2003-01-01

The application of high-level 3D simulation software to the design phase of colossal mandrel tooling for composite aerospace fuel tanks was accomplished to discover and resolve safety and human engineering problems. The analyses were conducted to determine safety, ergonomic and human engineering aspects of the disassembly process of the fuel tank composite shell mandrel. Three-dimensional graphics high-level software, incorporating various ergonomic analysis algorithms, was utilized to determine if the process was within safety and health boundaries for the workers carrying out these tasks. In addition, the graphical software was extremely helpful in the identification of material handling equipment and devices for the mandrel tooling assembly/disassembly process.

Ultra-Sensitive Magnetoresistive Displacement Sensing Device

NASA Technical Reports Server (NTRS)

Olivas, John D. (Inventor); Lairson, Bruce M. (Inventor); Ramesham, Rajeshuni (Inventor)

2003-01-01

An ultrasensitive displacement sensing device for use in accelerometers, pressure gauges, temperature transducers, and the like, comprises a sputter deposited, multilayer, magnetoresistive field sensor with a variable electrical resistance based on an imposed magnetic field. The device detects displacement by sensing changes in the local magnetic field about the magnetoresistive field sensor caused by the displacement of a hard magnetic film on a movable microstructure. The microstructure, which may be a cantilever, membrane, bridge, or other microelement, moves under the influence of an acceleration a known displacement predicted by the configuration and materials selected, and the resulting change in the electrical resistance of the MR sensor can be used to calculate the displacement. Using a micromachining approach, very thin silicon and silicon nitride membranes are fabricated in one preferred embodiment by means of anisotropic etching of silicon wafers. Other approaches include reactive ion etching of silicon on insulator (SOI), or Low Pressure Chemical Vapor Deposition of silicon nitride films over silicon substrates. The device is found to be improved with the use of giant magnetoresistive elements to detect changes in the local magnetic field.

Study of magnetoresistance in the supercooled state of Dy-Y alloys

NASA Astrophysics Data System (ADS)

Jena, Rudra Prasad; Lakhani, Archana

2018-02-01

We report the magnetoresistance studies on Dy1-xYx (x ≤ 0.05) alloys across the first order helimagnetic to ferromagnetic phase transition. These alloys exhibit multiple magnetic phases on varying the temperature and magnetic field. The magnetoresistance studies in the hysteresis region shows irreversibility in forward and reverse field cycles. The resistivity values at zero field for these alloys after zero field cooling to the measurement temperatures, are different in both forward and reverse field cycles. The path dependence of magnetoresistance suggests the presence of helimagnetic phase as the supercooled metastable state which transforms to the stable ferromagnetic state on increasing the field. At high magnetic fields negative magnetoresistance following a linear dependence with field is observed which is attributed to the magnon scattering.

Large magnetoresistance induced by crystallographic defects in FexTaS2 single crystals

NASA Astrophysics Data System (ADS)

Chen, Chih-Wei; Morosan, Emilia; Morosan's Group Team

The search for the materials that show large magnetoresistance and the mechanisms that induce it remains challenging in both experimental and theoretical aspects. The giant magnetoresistance in one class of materials, ferromagnetic conductors, is generally attributed to the misalignments of magnetic moments, which cause spin disorder scattering. Recently, very large magnetoresistance (>60 %) was discovered in the ferromagnetic Fe-intercalated transition metal dichalcogenide, Fe0.28TaS2 [Phys. Rev. B 91, 054426(2015)]. The mechanism that led to this large magnetoresistance was suggested to be due to the deviation of Fe concentration from commensurate values (1/4 or 1/3), which caused magnetic moments' misalignments. Here we report a study of FexTaS2 crystals with x close to the commensurate values. Our results qualitatively demonstrate that crystallographic defects significantly affect magnetoresistance in FexTaS2. This provides a way to search for large magnetoresistance in more intercalated transition metal dichalcogenides. This work is supported by the Department of Defense PECASE.

Colossal permittivity and the polarization mechanism of (Mg, Mn) co-doped LaGaO3 ceramics

NASA Astrophysics Data System (ADS)

Luo, Tingting; Liu, Zhifu; Zhang, Faqiang; Li, Yongxiang

2018-03-01

Mg and Mn co-doped LaGa0.7-xMgxMn0.3O3 (x = 0, 0.05, 0.10, 0.15) ceramics were prepared by a solid-state reaction method. The electrical properties of the LaGa0.7-xMgxMn0.3O3 ceramics were studied in detail by dielectric spectra, impedance spectra, and I-V characteristic analysis. Colossal permittivity up to 104 could be obtained across the frequency range up to 104 Hz. The impedance analysis of the co-doped LaGaO3 ceramics indicated that the Mott's variable range hopping (VRH) polarization should be the main origin of colossal permittivity. Mg and Mn co-doping suppressed the formation of Mn3+ and enhanced the VRH polarization, resulting in increased permittivity. Partial localization of electrons by Mg reduced the long-range electron hopping and led to the decrease in dielectric loss.

Stripe domains and magnetoresistance in thermally deposited nickel films

NASA Astrophysics Data System (ADS)

Sparks, P. D.; Stern, N. P.; Snowden, D. S.; Kappus, B. A.; Checkelsky, J. G.; Harberger, S. S.; Fusello, A. M.; Eckert, J. C.

2004-05-01

We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21+/-0.02 up to 120nm thickness. There is a negative magnetoresistance for fields out of the plane.

Wireless power transfer based on dielectric resonators with colossal permittivity

NASA Astrophysics Data System (ADS)

Song, Mingzhao; Belov, Pavel; Kapitanova, Polina

2016-11-01

Magnetic resonant wireless power transfer system based on dielectric disk resonators made of colossal permittivity (ɛ = 1000) and low loss (tan δ = 2.5 × 10-4) microwave ceramic is experimentally investigated. The system operates at the magnetic dipole mode excited in the resonators providing maximal power transfer efficiency of 90% at the frequency 232 MHz. By applying an impedance matching technique, the efficiency of 50% is achieved within the separation between the resonators d = 16 cm (3.8 radii of the resonator). The separation, misalignment and rotation dependencies of wireless power transfer efficiency are experimentally studied.

Colossal dielectric and electromechanical responses in self-assembled polymeric nanocomposites

NASA Astrophysics Data System (ADS)

Huang, Cheng; Zhang, Q. M.; Li, Jiang Yu; Rabeony, Manese

2005-10-01

An electroactive polymer nanocomposite, in which high dielectric constant copper phthalocyanine oligomer (o-CuPc) nanoparticles are incorporated into the block polyurethane (PU) matrix by the combination of "top down" and "bottom up" approaches, was realized. Such an approach enables the nanocomposite to exhibit colossal dielectric and electromechanical responses with very low volume fraction of the high dielectric constant o-CuPc nanofillers (˜3.5%) in the composite. In contrast, a simple blend of o-CuPc and PU composite with much higher o-CuPc content (˜16% of o-CuPc) shows much lower dielectric and electromechanical responses.

Giant magnetoresistive sensor

DOEpatents

Stearns, Daniel G.; Vernon, Stephen P.; Ceglio, Natale M.; Hawryluk, Andrew M.

1999-01-01

A magnetoresistive sensor element with a three-dimensional micro-architecture is capable of significantly improved sensitivity and highly localized measurement of magnetic fields. The sensor is formed of a multilayer film of alternately magnetic and nonmagnetic materials. The sensor is optimally operated in a current perpendicular to plane mode. The sensor is useful in magnetic read/write heads, for high density magnetic information storage and retrieval.

Charge transfer in iridate-manganite superlattices

DOE PAGES

Okamoto, Satoshi; Nichols, John; Sohn, Changhee; ...

2017-03-03

Charge transfer in superlattices consisting of SrIrOmore » $$_3$$ and SrMnO$$_3$$ is investigated using density functional theory. Despite the nearly identical work function and non-polar interfaces between SrIrO$$_3$$ and SrMnO$$_3$$, rather large charge transfer was experimentally reported between them. Our results provide a qualitative understanding to such experimental reports. We further develop a microscopic model that captures the mechanism behind this phenomenon. This leads to unique strain dependence of such charge transfer in iridate-manganite superlattices. The predicted behavior is consistently verified by experiment. Lastly, our work thus demonstrates a new route to control electronic states in non-polar oxide heterostructures.« less

Low temperature transport anomaly in Cr substituted (La0.67Sr0.33)MnO3 manganites

NASA Astrophysics Data System (ADS)

Tank, Tejas M.; Shelke, Vilas; Das, Sarmistha; Rana, D. S.; Thaker, C. M.; Samatham, S. S.; Ganesan, V.; Sanyal, S. P.

2017-06-01

The structural, electrical, and magnetic properties of La0.67Sr0.33Mn1-xCrxO3 (0 ≤ x ≤ 0.10) manganites have been studied by substitution of antiferromagnetic trivalent Cr ion at Mn-site. Systematic efforts have been carried out to understand the electrical resistivity behavior in the ferromagnetic metallic and paramagnetic semi-conducting phases of Cr substituted La0.67Sr0.33Mn1-xCrxO3 manganites. Polycrystalline samples show a resistivity minimum at a temperature (Tmin) of <40 K in the ferromagnetic metallic phase. Tmin shifts to higher temperatures on application of magnetic fields. The appearance of this resistivity minimum was analyzed by fittings the data according to the model that considers e-e scattering caused by enhanced Coulombic interactions. The electrical resistivity data has been best fitted in the metallic and semiconducting regime using various models. Present results suggest that intrinsic magnetic inhomogeneity like Cr3+ ions in these strongly electron-correlated manganite systems is originating due to the existence of the ferromagnetic interactions.

Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures

NASA Astrophysics Data System (ADS)

Kally, James; Lv, Yang; Zhang, Delin; Lee, Joon Sue; Samarth, Nitin; Wang, Jian-Ping; Department of Electrical; Computer Engineering, University of Minnesota, Minneapolis Collaboration; Department of Physics, Pennsylvania State University Collaboration

The surface states of topological insulators offer a potentially very efficient way to generate spins and spin-orbit torques to magnetic moments in proximity. The switching by spin-orbit torque itself only requires two terminals so that a charge current can be applied. However, a third terminal with additional magnetic tunneling junction structure is needed to sense the magnetization state if such devices are used for memory and logic applications. The recent discovery of unidirectional spin Hall magnetoresistance in heavy metal/ferromagnetic and topological insulator/magnetically doped topological insulator systems offers an alternative way to sense magnetization while still keeping the number of terminals to minimal two. The unidirectional spin Hall magnetoresistance in topological insulator/strong ferromagnetic layer heterostructure system has yet not been reported. In this work, we report our experimental observations of such magnetoresistance. It is found to be present and comparable to the best result of the previous reported Ta/Co systems in terms of magnetoresistance per current density per total resistance.

Electric field control of magnetoresistance in InP nanowires with ferromagnetic contacts.

PubMed

Zwanenburg, F A; van der Mast, D W; Heersche, H B; Kouwenhoven, L P; Bakkers, E P A M

2009-07-01

We demonstrate electric field control of sign and magnitude of the magnetoresistance in InP nanowires with ferromagnetic contacts. The sign change in the magnetoresistance is directly correlated with a sign change in the transconductance. Additionally, the magnetoresistance is shown to persist at such a high bias that Coulomb blockade has been lifted. We also observe the magnetoresistance when one of the ferromagnets is replaced by a nonmagnetic metal. We conclude that it must be induced by a single ferromagnetic contact, and that spin transport can be ruled out as the origin. Our results emphasize the importance of a systematic investigation of spin-valve devices in order to discriminate between ambiguous interpretations.

Negative and positive magnetoresistance in GaInNAs/GaAs modulation-doped quantum well structures

NASA Astrophysics Data System (ADS)

Nutku, Ferhat; Donmez, Omer; Sarcan, Fahrettin; Erol, Ayşe; Puustinen, Janne; Arıkan, Mehmet Çetin; Guina, Mircea

2015-03-01

In this work, magnetoresistance of as-grown and annealed n- and p-type modulation-doped Ga0.68In0.32NyAs1-y/GaAs single quantum well structures with various nitrogen concentrations has been studied. At low temperatures and low magnetic fields, in n-type samples negative and in p-type samples positive, magnetoresistance has been observed. The observed negative magnetoresistance in n-type samples is an indication of enhanced backscattering of electrons due to the weak localization of the electrons as an effect of the N-induced defects. Nitrogen concentration and thermal annealing dependence of the magnetoresistance have been studied for both n- and p-type samples. The observed decrease in the negative magnetoresistance in n-type and enhanced positive magnetoresistance in p-type samples following thermal annealing have been explained by considering thermal annealing-induced improvement of mobility and the crystal quality in N-containing samples. After thermal annealing, the magnitude of negative magnetoresistance decreases and the breaking of the weak localization is achieved at lower magnetic fields in n-type samples. It is observed that as the mobility of the sample increases, critical magnetic field of negative to positive magnetoresistance transition becomes lower.

High-temperature interlayer magnetoresistance in La5Mo4O16

NASA Astrophysics Data System (ADS)

Kobayashi, K.; Katsufuji, T.

2011-03-01

We found that La5Mo4O16 with Mo4+ and Mo5+ ions (S=1 and S=1/2 spins) on a quasisquare lattice exhibits a distinct magnetoresistance for the current perpendicular to the square-lattice layers below the antiferromagnetic ordering temperature TAF=190 K. This magnetoresistance occurs well below 1 T, and can be attributed to a metamagnetic transition from antiferromagnetically aligned moments between the layers to ferromagnetically aligned ones. The magnetoresistance changes its characteristic with the change of the magnetic state below TF=70 K, where spontaneous magnetization appears.

Conductive mechanism in manganite materials

NASA Astrophysics Data System (ADS)

Liu, Xianming; Zhu, Hong; Zhang, Yuheng

2002-01-01

We describe a model in which f(T)=M(T)/Mmax represents both the fraction of the itinerant electron density in the double-exchange (DE) theory and the magnetization σ in the current carrier density collapse (CCDC) theory. With this model, we have checked the DE and CCDC theories with our experimental results of the transport behavior. The DE theory yields agreement with the experimental resistivity excellently, in which the conductivity is the sum of the polaronic and itinerant electronic conductivity for the insulator-metal transition regime. The fitting curves of the resistivity by the CCDC theory deviate from the experiment seriously. This might be caused by the improper assumption of the temperature-dependent carrier density and the temperature-independent carrier mobility. Therefore, it is concluded that the DE theory is more suitable to explain the conductive mechanism in perovskite manganites.

Local probe studies on lattice distortions and electronic correlations in manganites

NASA Astrophysics Data System (ADS)

Lopes, Armandina Maria Lima

Nesta tese apresenta-se um estudo experimental das distorcoes locais e correlacoes electronicas em oxidos magneticos com magnetoresistencia colossal. A tecnica de sonda local - Correlacao Angular Perturbada - e utilizada em amostras caracterizadas quanto as suas propriedades macroscopicas nomeadamente propriedades estruturais, magneticas e electricas, tendo em vista a obtencao de informacao microscopica relevante via gradiente de campo electrico e campo magnetico hiperfino, focando em particular os seguintes aspectos: -Distorcoes de rede e agregados de polaroes no sistema LaMnO3+Delta. E apresentado um estudo dos gradientes de campo electrica e campo magnetico hiperfino em amostras representativas do sistema LaMnO3+Delta, correlacionando estas propriedades locais com a caracterizacao das propriedades macroscopicas, efectuada nas mesmas amostras. Desta forma, foi possivel estudar a natureza microscopica das distorcoes polaronicas. Foi dada especial atencao ao composto com composicao LaMnO3.12 uma vez que este e um sistema padrao de uma manganite ferromagnetica-isoladora que apresenta uma transicao estrutural romboedrica (R)-ortorrombica (O) perto da temperatura ambiente. O estudo revelou que agregados de distorcoes locais sobrevivem ate 776 K, na fase de estrutura media mais simetrica (romboedrica), onde, por simetria, os octaedros MnO6 deveriam ser regulares. Estas distorcoes sao semelhantes as observadas no sistema LaMnO3 onde os octaedros MnO6 apresentam uma distorcao Jahn-Teller colectiva. Com a diminuicao da temperatura observa-se um aumento continuo destes agregados. Abaixo de uma temperatura critica estas distorcoes relaxam acomodando-se numa estrutura com reduzidas distorcoes Jahn-teller. Verificou-se tambem que a transicao estrutural (macroscopica) pode ser entendida como uma transicao de percolacao dos ambientes microscopicos. -Coexistencia das ordens electrica e magnetica no sistema Pr1-xCaxMnO3. E apresentado o primeiro estudo de gradiente de campo

Anomalous electronic structure and magnetoresistance in TaAs2

NASA Astrophysics Data System (ADS)

Luo, Yongkang; McDonald, R. D.; Rosa, P. F. S.; Scott, B.; Wakeham, N.; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Ronning, F.

2016-06-01

The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.

Anomalous electronic structure and magnetoresistance in TaAs2

PubMed Central

Luo, Yongkang; McDonald, R. D.; Rosa, P. F. S.; Scott, B.; Wakeham, N.; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Ronning, F.

2016-01-01

The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions. PMID:27271852

Quantized magnetoresistance in atomic-size contacts.

PubMed

Sokolov, Andrei; Zhang, Chunjuan; Tsymbal, Evgeny Y; Redepenning, Jody; Doudin, Bernard

2007-03-01

When the dimensions of a metallic conductor are reduced so that they become comparable to the de Broglie wavelengths of the conduction electrons, the absence of scattering results in ballistic electron transport and the conductance becomes quantized. In ferromagnetic metals, the spin angular momentum of the electrons results in spin-dependent conductance quantization and various unusual magnetoresistive phenomena. Theorists have predicted a related phenomenon known as ballistic anisotropic magnetoresistance (BAMR). Here we report the first experimental evidence for BAMR by observing a stepwise variation in the ballistic conductance of cobalt nanocontacts as the direction of an applied magnetic field is varied. Our results show that BAMR can be positive and negative, and exhibits symmetric and asymmetric angular dependences, consistent with theoretical predictions.

Electronic structure basis for the extraordinary magnetoresistance in WTe 2

DOE PAGES

Pletikosić, I.; Ali, Mazhar N.; Fedorov, A. V.; ...

2014-11-19

The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. As a result, a change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior ofmore » the magnetoresistance in WTe₂ was identified.« less

Impact of Tunnel-Barrier Strength on Magnetoresistance in Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Morgan, Caitlin; Misiorny, Maciej; Metten, Dominik; Heedt, Sebastian; Schäpers, Thomas; Schneider, Claus M.; Meyer, Carola

2016-05-01

We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both the temperature and bias-voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly affected by the tunnel-barrier strength, which appears to be one reason for the variation between devices previously detected in similar structures. Modeling the data by means of the scattering matrix approach, we find a nontrivial dependence of the magnetoresistance on the barrier strength. Furthermore, an analysis of the spin precession observed in a nonlocal Hanle measurement yields a spin lifetime of τs=1.1 ns , a value comparable with those found in silicon- or graphene-based spin-valve devices.

Theory of unidirectional magnetoresistance in magnetic heterostructures

NASA Astrophysics Data System (ADS)

Zhang, Steven S.-L.; Vignale, Giovanni

2017-09-01

We present a general drift-diffusion theory beyond linear response to explain the unidirectional magnetoresistance (UMR) observed in recent experiments in various magnetic heterostructures. In general, such nonlinear magnetoresistance may originate from the concerted action of current-induced spin accumulation and spin asymmetry in electron mobility. As a case study, we calculate the UMR in a bilayer system consisting of a heavy-metal (HM) and a ferromagnetic metal (FM), where the spin accumulation is induced via the spin Hall effect in the bulk of the HM layer. Our previous formulation [cf. PRB 94, 140411(R) (2016)] is generalized to include the interface resistance and spin memory loss, which allows us to analyze in details their effects on the UMR. We found that the UMR turns out to be independent of the spin asymmetry of the interfacial resistance, at variance with the linear giant-magnetoresistance (GMR) effect. A linear relation between the UMR and the conductivity-spin asymmetry is revealed, which provides an alternative way to control the sign and magnitude of the UMR and hence may serve as an experimental signature of our proposed mechanism.

Anomalous electronic structure and magnetoresistance in TaAs 2

DOE PAGES

Luo, Yongkang; McDonald, R. D.; Rosa, P. F. S.; ...

2016-01-01

We report that the change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs 2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. In conclusion, density functional calculations find that TaAs 2 is a new topological semimetal [Z 2more » invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.« less

Relation of Giant Thermo-EMF, Magnetothermo-EMF, Magnetoresistance, and Magnetization to Magnetic Impurity States in Manganites Nd(1- x)Sr x MnO3 and Sm(1- x)Sr x MnO3

NASA Astrophysics Data System (ADS)

Koroleva, L. I.; Batashev, I. K.; Morozov, A. S.; Balbashov, A. M.; Szymczak, H.; Slawska-Waniew, A.

2018-02-01

Thermo-EMF, magnetothermo-EMF, magnetoresistance, and magnetization of single-crystal samples of Nd(1- x)Sr x MnO3 and Sm(1- x)Sr x MnO3 with 0 ≤ x ≤ 0.3 have been studied experimentally. A sharp increase in the thermo-EMF and giant magnetothermo-EMF and magnetoresistance has been observed near the Curie point T C in compounds with 0.15 ≤ x ≤ 0.3. At the same time, no peculiarities have been found in compositions with x = 0. Since compounds with x > 0 consist of ferromagnetic clusters of the ferron type that reside in an antiferromagnetic A-type matrix, this means that the sharp increase in the thermo-EMF near T C is caused by ferrons. Indeed, the disappearance of ferrons due to a magnetic field or heating above T C leads to an abrupt decrease in the thermo-EMF. Therefore, thermo-EMF in alloyed magnetic semiconductors has been determined by the impurity concentration and the sample volume.

Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

DOE PAGES

Sapkota, Keshab R.; Chen, Weimin; Maloney, F. Scott; ...

2016-10-14

We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior wasmore » modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. Finally, this work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.« less

Tailoring transport properties of phase-separated manganite films with ordered magnetic nanostructures

DOE PAGES

Vlaminck, V.; Yanez, W.; Hoffman, J.; ...

2016-08-02

Here, the magnetotransport properties of thin manganite films (La 0.7Ca 0.3MnO 3) coupled with arrays of permalloy (Py) nanodots deposited on the surface of the film are studied as a function of temperature, magnetic field, and the size of the dots. In the presence of the magnetic dots, a reduction of the electrical resistivity is observed, especially at the insulator-to-metal transition, as well as a shift of the transition peak towards higher temperatures. This indicates that, due to local interface exchange coupling, highly conductive ferromagnetic domains are nucleated in the manganite film underneath the Py nanodots. The use of amore » simplified resistor network model allows us to estimate the size of the metallic regions induced by exchange coupling. At low temperatures, these regions extend ~70 nm beyond the edge of the nanodots, a length scale comparable to the correlation length of the ferromagnetic clusters in the phase-separated state of La 0.7Ca 0.3MnO 3.« less

The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Z. H., E-mail: zhaohui@physics.umanitoba.ca; Bai, Lihui; Hu, C.-M.

2015-03-15

The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ) was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, itsmore » angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.« less

Low Temperature Resistive Switching Behavior in a Manganite

NASA Astrophysics Data System (ADS)

Salvo, Christopher; Lopez, Melinda; Tsui, Stephen

2012-02-01

The development of new nonvolatile memory devices remains an important field of consumer electronics. A possible candidate is bipolar resistive switching, a method by which the resistance of a material changes when a voltage is applied. Although there is a great deal of research on this topic, not much has been done at low temperatures. In this work, we compare the room temperature and low temperature behaviors of switching in a manganite thin film. The data indicates that the switching is suppressed upon cooling to cryogenic temperatures, and the presence of crystalline charge traps is tied to the physical mechanism.

Anomalous spin Hall magnetoresistance in Pt/Co bilayers

NASA Astrophysics Data System (ADS)

Kawaguchi, Masashi; Towa, Daiki; Lau, Yong-Chang; Takahashi, Saburo; Hayashi, Masamitsu

2018-05-01

We have studied the spin Hall magnetoresistance (SMR), the magnetoresistance within the plane transverse to the current flow, of Pt/Co bilayers. We find that the SMR increases with increasing Co thickness: the effective spin Hall angle for bilayers with thick Co exceeds the reported values of Pt when a conventional drift-diffusion model is used. An extended model including spin transport within the Co layer cannot account for the large SMR. To identify its origin, contributions from other sources are studied. For most bilayers, the SMR increases with decreasing temperature and increasing magnetic field, indicating that magnon-related effects in the Co layer play little role. Without the Pt layer, we do not observe the large SMR found for the Pt/Co bilayers with thick Co. Implementing the effect of the so-called interface magnetoresistance and the textured induced anisotropic scattering cannot account for the Co thickness dependent SMR. Since the large SMR is present for W/Co but its magnitude reduces in W/CoFeB, we infer that its origin is associated with a particular property of Co.

Quantum linear magnetoresistance in NbTe2

NASA Astrophysics Data System (ADS)

Chen, Hongxiang; Li, Zhilin; Fan, Xiao; Guo, Liwei; Chen, Xiaolong

2018-07-01

NbTe2 is a quasi-2D layered semimetal with charge density wave ground state showing a distorted-1T structure at room temperature. Here we report the anisotropic magneto-transport properties of NbTe2. An anomalous linear magnetoresistance up to 30% at 3 K in 9 T was observed, which can be well explained by a quantum linear magnetoresistance model. Our results reveal that a large quasi-2D Fermi surface and small Fermi pockets with linearly dispersive bands coexist in NbTe2. The comparison with the isostructural TaTe2 provides more information about the band structure evolution with charge density wave transitions in NbTe2 and TaTe2.

Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy

NASA Astrophysics Data System (ADS)

Domingo, N.; Farokhipoor, S.; Santiso, J.; Noheda, B.; Catalan, G.

2017-08-01

We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO3 by means of conductive—atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.

Spin dependence of ferroelectric polarization in the double exchange model for manganites

NASA Astrophysics Data System (ADS)

Solovyev, I. V.; Nikolaev, S. A.

2014-11-01

The double exchange (DE) model is systematically applied for studying the coupling between ferroelectric (FE) and magnetic orders in several prototypical types of multiferroic manganites. The model itself was constructed for the magnetically active Mn 3 d bands in the basis of Wannier functions and includes the effect of screened onsite Coulomb interactions in the Hartree-Fock approximation. All model parameters were derived from the first-principles electronic-structure calculations. The essence of our approach for the FE polarization is to use the Berry-phase theory, formulated in terms of occupied Wannier functions, and to evaluate the asymmetric spin-dependent change of these functions in the framework of the DE model. This enables us to quantify the effect of the magnetic symmetry breaking and derive several useful expressions for the electronic polarization P , depending on the relative directions of spins. The spin dependence of P in the DE model is given by the isotropic correlation functions ei.ej between directions of neighboring spins. Despite formal similarity with the magnetostriction mechanism, the magnetoelectric coupling in the proposed DE theory is not related to the magnetically driven FE atomic displacements and can exist even in compounds with the centrosymmetric crystal structure, if the spatial distribution of ei.ej does not respect the inversion symmetry. The proposed theory is applied to the solution of three major problems: (i) the magnetic-state dependence of P in hexagonal manganites, using YMnO3 as an example; (ii) the microscopic relationship between canted ferromagnetism and P in monoclinic BiMnO3; (iii) the origin of FE activity in orthorhombic manganites. Particularly, we will show that for an arbitrary noncollinear magnetic structure, propagating along the orthorhombic b axis and antiferromagnetically coupled along the c axis, the polarization is induced by an inhomogeneous distribution of spins and can be obtained by scaling the

Modulation of manganite nano-film properties mediated by strong influence of strontium titanate excitons.

PubMed

Yin, Xinmao; Tang, Chi Sin; Majidi, Muhammad Aziz; Ren, Peng; Wang, Le; Yang, Ping; Diao, Caozheng; Yu, Xiaojiang; Breese, Mark B H; Wee, Andrew Thye Shen; Wang, Junling; Rusydi, Andrivo

2017-12-06

Hole-doped perovskite manganites have attracted much attention because of their unique optical, electronic and magnetic properties induced by the interplay between spin, charge, orbital and lattice degrees of freedom. Here, a comprehensive investigation of the optical, electronic and magnetic properties of La0.7Sr0.3MnO3 thin-films on SrTiO3 (LSMO/STO) and other substrates is conducted using a combination of temperature-dependent transport, spectroscopic ellipsometry, X-ray absorption spectroscopy and X-ray magnetic circular dichroism. A significant difference in the optical property of LSMO/STO that occurs even in thick (87.2nm) LSMO/STO from that of LSMO on other substrates is discovered. Several excitonic features are observed in thin-film nanostructure LSMO/STO at ~4eV, which could be attributed to the formation of anomalous charged excitonic complexes. Based on spectral-weight transfer analysis, anomalous excitonic effects from STO strengthen the electronic-correlation in LSMO films. This results in the occurrence of optical spectral changes related to the intrinsic Mott-Hubbard properties in manganites. We find that while lattice strain from the substrate influences the optical properties of the LSMO thin-films, the coexistence of strong electron-electron (e-e) and electron-hole (e-h) interactions which leads to the resonant excitonic effects from the substrate play a much more significant role. Our result shows that the onset of anomalous excitonic dynamics in manganite oxides may potentially generate new approaches in manipulating exciton-based optoelectronic applications.

Dirac State in Giant Magnetoresistive Materials

NASA Astrophysics Data System (ADS)

Wu, Y.; Jo, N. H.; Ochi, M.; Huang, L.; Mou, D.; Kong, T.; Mun, E.; Wang, L.; Lee, Y.; Bud'Ko, S. L.; Canfield, P. C.; Trivedi, N.; Arito, R.; Kaminski, A.

We use ultrahigh resolution, tunable, vacuum ultraviolet laser-based angle-resolved photoemission spectroscopy (ARPES) to study the electronic properties of materials that recently were discovered to display titanic magnetoresistance. We find that that several of these materials have Dirac-like features in their band structure. In some materials those features are ``ordinary'' Dirac cones, while in others the linear Dirac dispersion of two crossing bands forms a linear object in 3D momentum space. Our observation poses an important question about the role of Dirac dispersion in the unusually high, non-saturating magnetoresistance of these materials. Research was supported by the US DOE, Office of Basic Energy Sciences under Contract No. DE-AC02-07CH11358; Gordon and Betty Moore Foundation EPiQS Initiative (Grant No. GBMF4411); CEM, a NSF MRSEC, under Grant No. DMR-1420451.

Observation of a thermally enhanced magnetoresistance in NiFe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Y.; Feng, C., E-mail: fengchun@ustb.edu.cn, E-mail: ghyu@mater.ustb.edu.cn; Liu, D. X.

2016-04-15

A thermally enhanced magnetoresistance (ThMR) was designed and obtained by simultaneously applying charge and heat currents to a NiFe thin film. From the measurement we observed that the magnetoresistance value was as high as -22600% when the input charge current and applied temperature gradient was 0.966 μA and 2.5 °C/mm, respectively. This ThMR can be controllable by adjusting the relative values of the input charge and heat currents. On increasing the input charge current from 0.85 to 1.05 μA by fixing the temperature gradient at 2.5 °C/mm, the ThMR first increased from 9% to 183% and then decreased from -259%more » to -13%, at intervals of ∼0.96 μA. This can be explained by the spin-dependent transport phenomenon i.e., scattering induced sign difference between magnetoresistance and magnetothermopower in NiFe.« less

Contribution of Jahn-Teller and charge transfer excitations to the photovoltaic effect of manganite/titanite heterojunctions

NASA Astrophysics Data System (ADS)

Ifland, Benedikt; Hoffmann, Joerg; Kressdorf, Birte; Roddatis, Vladimir; Seibt, Michael; Jooss, Christian

2017-06-01

The effect of correlation effects on photovoltaic energy conversion at manganite/titanite heterojunctions is investigated. As a model system we choose a heterostructure consisting of the small polaron absorber Pr0.66Ca0.34MnO3 (PCMO) epitaxially grown on single-crystalline Nb-doped SrTi0.998Nb0.002O3 (STNO) substrates. The high structural and chemical quality of the interfaces is proved by detailed characterization using high-resolution transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) studies. Spectrally resolved and temperature-dependent photovoltaic measurements show pronounced contributions of both the Jahn-Teller (JT) excitations and the charge transfer (CT) transitions to the photovoltaic effect at different photon energies. A linear temperature dependence of the open-circuit voltage for an excitation in the PCMO manganite is only observed below the charge-ordering temperature, indicating that the diffusion length of the photocarrier exceeds the size of the space charge region. The photovoltaic response is compared to that of a heterojunction of lightly doped Pr0.05Ca0.95MnO3 (CMO)/STNO, where the JT transition is absent. Here, significant contributions of the CT transition to the photovoltaic effect set in below the Neel temperature. We conclude that polaronic correlations and ordering effects are essentials for photovoltaic energy conversion in manganites.

Large linear magnetoresistance in topological crystalline insulator Pb{sub 0.6}Sn{sub 0.4}Te

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roychowdhury, Subhajit; Ghara, Somnath; Guin, Satya N.

2016-01-15

Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as ∼200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb{sub 0.6}Sn{sub 0.4}Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor. - Graphical abstract: Largemore » non-saturating linear magnetoresistance has been evidenced in topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. - Highlights: • Large non-saturating linear magnetoresistance was achieved in the topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te. • Highest magnetoresistance value as high as ~200% was achieved at 3 K at magnetic field of 9 T. • Linear magnetoresistance in Pb{sub 0.6}Sn{sub 0.4}Te is mainly governed by the spatial fluctuation of the carrier mobility.« less

Tunneling Spectroscopy Study of Spin-Polarized Quasiparticle Injection Effects in Cuparate/Manganite Heterostructures

NASA Technical Reports Server (NTRS)

Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

1998-01-01

Scanning tunneling spectroscopy was performed at 4.2K on epitaxial thin-film heterostructures comprising YBa2Cu3O7 and La0.7Ca0.3MnO3, to study the microscopic effects of spin-polarized quasiparticle injection from the half-metallic ferromagnetic manganite on the high-Tc cuprate superconductor.

The Control of Anisotropic Transport in Manganites by Stripy Domains

NASA Astrophysics Data System (ADS)

Ju, Changcheng; Lu, Xiaomei; Chu, Yinghao

2014-03-01

Epitaxial thin film acts as a significant tool to investigate novel phenomena of complex oxide systems. Extrinsic constraint1 of uniform or certain designed buffer layer strain could be easily implanted to these materials. However, the strain distribution might be quite complicated by involving micro- or nano-lattice distortions which could partially relax the strain and determine the complex phase diagrams of thin film, meanwhile introducing structural and physical inhomogeneities. In this work , we report 71° striped ferroelectric domains created in BFO can also epitaxially lock the perovskite manganites leading to the emerge of ordered structural domain. LSMO/BFO hetero-epitaxial samples are deposited by PLD. The 71° periodic striped domains and coherent growth are demonstrated by PFM and X-ray analysis. Plan-view TEM and X-ray RSM have been used to confirm the epitaxial relationships of the functional layers and IP lattice constant. Both the simulation and structural analysis demonstrate we can create a periodic ordered stripe structural domain in LSMO. And this will leave an anisotropic distribution of structural domain walls which makes it possible to capture the anisotropic tunneling for strong electron-lattice coupling in manganites. Temperature-dependent resistivity measurements reveal a substantial anisotropic resistivities and a remarkable shift of the MI transition between the perpendicular and parallel to the stripe domain directions.

Origin of colossal permittivity in (In1/2Nb1/2)TiO2via broadband dielectric spectroscopy.

PubMed

Zhao, Xiao-gang; Liu, Peng; Song, Yue-Chan; Zhang, An-ping; Chen, Xiao-ming; Zhou, Jian-ping

2015-09-21

(In1/2Nb1/2)TiO2 (IN-T) ceramics were prepared via a solid-state reaction route. X-ray diffraction (XRD) and Raman spectroscopy were used for the structural and compositional characterization of the synthesized compounds. The results indicated that the sintered ceramics have a single phase of rutile TiO2. Dielectric spectroscopy (frequency range from 20 Hz to 1 MHz and temperature range from 10 K to 270 K) was performed on these ceramics. The IN-T ceramics showed extremely high permittivities of up to ∼10(3), which can be referred to as colossal permittivity, with relatively low dielectric losses of ∼0.05. Most importantly, detailed impedance data analyses of IN-T demonstrated that electron-pinned defect-dipoles, interfacial polarization and polaron hopping polarization contribute to the colossal permittivity at high temperatures (270 K); however, only the complexes (pinned electron) and polaron hopping polarization are active at low temperatures (below 180 K), which is consistent with UDR analysis.

Co/Cu multilayers with reduced magnetoresistive hysteresis

NASA Astrophysics Data System (ADS)

Kubinski, D. J.; Holloway, H.

1997-01-01

Practical applications of Co/Cu multilayers (MLs) require copper thicknesses either ≈ 9 Å or ≈ 20 Å corresponding to the first or second antiferromagnetic maximum (AFM). The first AFM has much smaller magnetoresistive hysteresis than the second, but also has lower sensitivity. We discuss application of these MLs when low hysteresis is required. For the first AFM we may improve the sensitivity while retaining low hysteresis by increasing the cobalt thickness to 30-40 Å. At the second AFM we can reduce the magnetoresistive hysteresis by reducing the cobalt thickness to ˜ 3 Å. A particularly attractive combination of high sensitivity and low hysteresis is obtained at the second AFM by alternating such very thin Co layers with 15 Å thick Co layers.

Electric field driven evolution of topological domain structure in hexagonal manganites

NASA Astrophysics Data System (ADS)

Yang, K. L.; Zhang, Y.; Zheng, S. H.; Lin, L.; Yan, Z. B.; Liu, J.-M.; Cheong, S.-W.

2017-10-01

Controlling and manipulating the topological state represents an important topic in condensed matters for both fundamental researches and applications. In this work, we focus on the evolution of a real-space topological domain structure in hexagonal manganites driven by electric field, using the analytical and numerical calculations based on the Ginzburg-Landau theory. It is revealed that the electric field drives a transition of the topological domain structure from the type-I pattern to the type-II one. In particular, it is identified that a high electric field can enforce the two antiphase-plus-ferroelectric (AP +FE ) domain walls with Δ Φ =π /3 to approach each other and to merge into one domain wall with Δ Φ = 2 π /3 eventually if the electric field is sufficiently high, where Δ Φ is the difference in the trimerization phase between two neighboring domains. Our simulations also reveal that the vortex cores of the topological structure can be disabled at a sufficiently high critical electric field by suppressing the structural trimerization therein, beyond which the vortex core region is replaced by a single ferroelectric domain without structural trimerization (Q = 0 ). Our results provide a stimulating reference for understanding the manipulation of real-space topological domain structure in hexagonal manganites.

Colossal dielectric constant in PrFeO 3 semiconductor ceramics

NASA Astrophysics Data System (ADS)

Prasad, Bandi Vittal; Rao, G. Narsinga; Chen, J. W.; Babu, D. Suresh

2012-02-01

The perovskite PrFeO 3 ceramics were synthesized via sol-gel method. The dielectric properties and impedance spectroscopy (IS) of these ceramics were studied in the frequency range from 100 Hz to 1000 kHz in the temperature range from 80 K to 300 K. These materials exhibited colossal dielectric constant value of ˜10 4 at room temperature. The response is similar to that observed for relaxorferroelectrics. IS data analysis indicates the ceramics to be electrically heterogeneous semiconductor consisting of semiconducting grains with dielectric constant 30 and more resistive grain boundaries with effective dielectric constant ˜10 4. We conclude, therefore that grain boundary effect is the primary source for the high effective permittivity in PrFeO 3 ceramics.

Magnetoresistance of a nanostep junction based on topological insulators

NASA Astrophysics Data System (ADS)

Hu, Wei; Hong, Jin-Bin; Zhai, Feng

2018-06-01

We investigate ballistic transport of helical electrons in a three-dimensional topological insulator traversing a nanostep junction. We find that a magnetic field perpendicular to its side surface shrinks the phase space for transmission, leading to magnetoresistance for the Fermi energy close to the Dirac point of the top surface. We also find transmission resonances and suppression of the Fano factor due to Landau-level-related quasibound states. The transmission blockade in the off-resonance case can result in a huge magnetoresistance for Fermi energy higher than the Dirac point of the side surface.

Chemical nature of colossal dielectric constant of CaCu3Ti4O12 thin film by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Deng, Guochu; Xanthopoulos, Nicolas; Muralt, Paul

2008-04-01

Epitaxial CaCu3Ti4O12 thin films grown by pulsed laser deposition were studied in the as-deposited and oxygen annealed state. The first one exhibited the usual transition from dielectric to colossal dielectric behavior upon increasing the temperature to above 100K. This transition disappeared after annealing at 900°C in air. The two states significantly differ in their x-ray photoelectron spectra. The state of colossal dielectric constant corresponds to a bulk material with considerable amounts of Cu + and Ti3+, combined with Cu species enrichment at the surface. The annealed state exhibited a nearly stoichiometric composition with no Cu+ and Ti3+. The previously observed p-type conduction in the as-deposited state is thus related to oxygen vacancies compensated by the point defects of Cu+ and Ti3+.

Anisotropic magnetoresistance and tunneling magnetoresistance of conducting filaments in NiO with different resistance states

NASA Astrophysics Data System (ADS)

Zhao, Diyang; Qiao, Shuang; Luo, Yuxiang; Chen, Aitian; Zhang, Pengfei; Zheng, Ping; Sun, Zhong; Guo, Minghua; Chiang, F.-K.; Wu, Jian; Luo, Jianlin; Li, Jianqi; Wang, Yayu; Zhao, Yonggang; Tsinghua University Team; Chinese Academy of Sciences Collaboration

Resistive switching (RS) effect in conductor/insulator/conductor thin-film stacks has attracted much attention due to its interesting physics and potentials for applications. NiO is one of the most representative systems and its RS effect has been generally explained by the formation and rupture of Ni related conducting filaments, which are very unique since they are formed by electric forming process. We study the MR behaviors in NiO RS films with different resistance states. Rich and interesting MR behaviors were observed, including the normal and anomalous anisotropic magnetoresistance (AMR) and tunneling magnetoresistance (TMR), etc., which provide new insights into the nature of the filaments and their evolution in the resistive switching process. First-principles calculation reveals the essential role of oxygen migration into the filaments during the RESET process and can account for the experimental results. Our work provides a new avenue for the exploration of the conducting filaments in RS materials, and is significant for understanding the RS mechanism as well as multifunctional device design.

Mrs. Miniver's Girls: Plucky Girls in "Hidden Figures," "The Zookeeper's Wife," "Their Finest," and "Colossal"

ERIC Educational Resources Information Center

Beck, Bernard

2017-01-01

Four recent movies, "Hidden Figures," "The Zookeeper's Wife," "Their Finest," and "Colossal" exemplify a new cultural version of the movie heroine. This version combines feminism with commitment to solving an overwhelming problem. These heroines, thus, display the character virtues of Wonder Woman and Mrs.…

Active control of magnetoresistance of organic spin valves using ferroelectricity

PubMed Central

Sun, Dali; Fang, Mei; Xu, Xiaoshan; Jiang, Lu; Guo, Hangwen; Wang, Yanmei; Yang, Wenting; Yin, Lifeng; Snijders, Paul C.; Ward, T. Z.; Gai, Zheng; Zhang, X.-G.; Lee, Ho Nyung; Shen, Jian

2014-01-01

Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves. PMID:25008155

Electron gas at the interface between two antiferromagnetic insulating manganites

NASA Astrophysics Data System (ADS)

Calderón, M. J.; Salafranca, J.; Brey, L.

2008-07-01

We study theoretically the magnetic and electric properties of the interface between two antiferromagnetic and insulating manganites: La0.5Ca0.5MnO3 , a strong correlated insulator, and CaMnO3 , a band insulator. We find that a ferromagnetic and metallic electron gas is formed at the interface between the two layers. We confirm the metallic character of the interface by calculating the in-plane conductance. The possibility of increasing the electron-gas density by selective doping is also discussed.

Topological dynamics of vortex-line networks in hexagonal manganites

NASA Astrophysics Data System (ADS)

Xue, Fei; Wang, Nan; Wang, Xueyun; Ji, Yanzhou; Cheong, Sang-Wook; Chen, Long-Qing

2018-01-01

The two-dimensional X Y model is the first well-studied system with topological point defects. On the other hand, although topological line defects are common in three-dimensional systems, the evolution mechanism of line defects is not fully understood. The six domains in hexagonal manganites converge to vortex lines in three dimensions. Using phase-field simulations, we predicted that during the domain coarsening process, the vortex-line network undergoes three types of basic topological changes, i.e., vortex-line loop shrinking, coalescence, and splitting. It is shown that the vortex-antivortex annihilation controls the scaling dynamics.

Interface-engineered oxygen octahedral coupling in manganite heterostructures

NASA Astrophysics Data System (ADS)

Huijben, M.; Koster, G.; Liao, Z. L.; Rijnders, G.

2017-12-01

Control of the oxygen octahedral coupling (OOC) provides a large degree of freedom to manipulate physical phenomena in complex oxide heterostructures. Recently, local tuning of the tilt angle has been found to control the magnetic anisotropy in ultrathin films of manganites and ruthenates, while symmetry control can manipulate the metal insulator transition in nickelate thin films. The required connectivity of the octahedra across the heterostructure interface enforces a geometric constraint to the 3-dimensional octahedral network in epitaxial films. Such geometric constraint will either change the tilt angle to retain the connectivity of the corner shared oxygen octahedral network or guide the formation of a specific symmetry throughout the epitaxial film. Here, we will discuss the control of OOC in manganite heterostructures by interface-engineering. OOC driven magnetic and transport anisotropies have been realized in LSMO/NGO heterostructures. Competition between the interfacial OOC and the strain further away from the interface leads to a thickness driven sharp transition of the anisotropic properties. Furthermore, octahedral relaxation leading to a change of p-d hybridization driven by interfacial OOC appears to be the strongest factor in thickness related variations of magnetic and transport properties in epitaxial LSMO films on NGO substrates. The results unequivocally link the atomic structure near the interfaces to the macroscopic properties. The strong correlation between a controllable oxygen network and the functionalities will have significant impact on both fundamental research and technological application of correlated perovskite heterostructures. By controlling the interfacial OOC, it is possible to pattern in 3 dimensions the magnetization to achieve non-collinear magnetization in both in-plane and out of plane directions, thus making the heterostructures promising for application in orthogonal spin transfer devices, spin oscillators, and low

Model for large magnetoresistance effect in p–n junctions

NASA Astrophysics Data System (ADS)

Cao, Yang; Yang, Dezheng; Si, Mingsu; Shi, Huigang; Xue, Desheng

2018-06-01

We present a simple model based on the classic Shockley model to explain the magnetotransport in nonmagnetic p–n junctions. Under a magnetic field, the evaluation of the carrier to compensate Lorentz force establishes the necessary space-charge region distribution. The calculated current–voltage (I–V) characteristics under various magnetic fields demonstrate that the conventional nonmagnetic p–n junction can exhibit an extremely large magnetoresistance effect, which is even larger than that in magnetic materials. Because the large magnetoresistance effect that we discussed is based on the conventional p–n junction device, our model provides new insight into the development of semiconductor magnetoelectronics.

Tunneling magnetoresistance sensor with pT level 1/f magnetic noise

NASA Astrophysics Data System (ADS)

Deak, James G.; Zhou, Zhimin; Shen, Weifeng

2017-05-01

Magnetoresistive devices are important components in a large number of commercial electronic products in a wide range of applications including industrial position sensors, automotive sensors, hard disk read heads, cell phone compasses, and solid state memories. These devices are commonly based on anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR), but over the past few years tunneling magnetoresistance (TMR) has been emerging in more applications. Here we focus on recent work that has enabled the development of TMR magnetic field sensors with 1/f noise of less than 100 pT/rtHz at 1 Hz. Of the commercially available sensors, the lowest noise devices have typically been AMR, but they generally have the largest die size. Based on this observation and modeling of experimental data size and geometry dependence, we find that there is an optimal design rule that produces minimum 1/f noise. This design rule requires maximizing the areal coverage of an on-chip flux concentrator, providing it with a minimum possible total gap width, and tightly packing the gaps with MTJ elements, which increases the effective volume and decreases the saturation field of the MTJ freelayers. When properly optimized using this rule, these sensors have noise below 60 pT/rtHz, and could possibly replace fluxgate magnetometers in some applications.

Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry

NASA Astrophysics Data System (ADS)

Alekseev, P. S.; Dmitriev, A. P.; Gornyi, I. V.; Kachorovskii, V. Yu.; Narozhny, B. N.; Titov, M.

2018-02-01

Ultrapure conductors may exhibit hydrodynamic transport where the collective motion of charge carriers resembles the flow of a viscous fluid. In a confined geometry (e.g., in ultra-high-quality nanostructures), the electronic fluid assumes a Poiseuille-type flow. Applying an external magnetic field tends to diminish viscous effects leading to large negative magnetoresistance. In two-component systems near charge neutrality, the hydrodynamic flow of charge carriers is strongly affected by the mutual friction between the two constituents. At low fields, the magnetoresistance is negative, however, at high fields the interplay between electron-hole scattering, recombination, and viscosity results in a dramatic change of the flow profile: the magnetoresistance changes its sign and eventually becomes linear in very high fields. This nonmonotonic magnetoresistance can be used as a fingerprint to detect viscous flow in two-component conducting systems.

A General Strategy to Achieve Colossal Permittivity and Low Dielectric Loss Through Constructing Insulator/Semiconductor/Insulator Multilayer Structures

NASA Astrophysics Data System (ADS)

Liu, Kai; Sun, Yalong; Zheng, Fengang; Tse, Mei-Yan; Sun, Qingbo; Liu, Yun; Hao, Jianhua

2018-06-01

In this work, we propose a route to realize high-performance colossal permittivity (CP) by creating multilayer structures of insulator/semiconductor/insulator. To prove the new concept, we made heavily reduced rutile TiO2 via annealing route in Ar/H2 atmosphere. Dielectric studies show that the maximum dielectric permittivity ( 3.0 × 104) of our prepared samples is about 100 times higher than that ( 300) of conventional TiO2. The minimum dielectric loss is 0.03 (at 104-105 Hz). Furthermore, CP is almost independent of the frequency (100-106 Hz) and the temperature (20-350 K). We suggest that the colossal permittivity is attributed to the high carrier concentration of the inner TiO2 semiconductor, while the low dielectric loss is due to the presentation of the insulator layer on the surface of TiO2. The method proposed here can be expanded to other material systems, such as semiconductor Si sandwiched by top and bottom insulator layers of Ga2O3.

Origin of the colossal dielectric permittivity and magnetocapacitance in LuFe2O4

NASA Astrophysics Data System (ADS)

Ren, P.; Yang, Z.; Zhu, W. G.; Huan, C. H. A.; Wang, L.

2011-04-01

We report the detailed study on the colossal dielectric constant and magnetocapacitance of LuFe2O4. The experimental results indicate that the large dielectric constant of LuFe2O4 is originated from two sources, (1) Maxwell Wagner-type contributions of depletion layers at grain boundaries and the interfaces between sample and contacts, (2) AC response of the constant phase element in the bulk. A detailed equivalent circuit analysis indicates that the conductivity variation can be responsible for the observed "magnetocapacitance."

Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation

PubMed Central

Ye, Tianyu; Liu, Han-Chun; Wang, Zhuo; Wegscheider, W.; Mani, Ramesh G.

2015-01-01

A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. For circularly polarized radiation, the oscillatory magnetoresistive response is hardly sensitive to θ. PMID:26450679

Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation.

PubMed

Ye, Tianyu; Liu, Han-Chun; Wang, Zhuo; Wegscheider, W; Mani, Ramesh G

2015-10-09

A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. For circularly polarized radiation, the oscillatory magnetoresistive response is hardly sensitive to θ.

Visualization of a stable intermediate phase in photoinduced metal-to-insulator transition in manganites

NASA Astrophysics Data System (ADS)

Lin, Hanxuan; Liu, Hao; Bai, Yu; Miao, Tian; Yu, Yang; Zhu, Yinyan; Chen, Hongyan; Kou, Yunfang; Niu, Jiebin; Wang, Wenbin; Yin, Lifeng; Shen, Jian

First order metal-insulator transition, accounting for various intriguing phenomena, is one of the most important phase transitions in condensed matter systems. Aside from the initial and final states, i.e. the metallic and insulating phases, no stable intermediate phase has been experimentally identified in such first order phase transition, though some transient phases do exist at the ultrafast time scale. Here, using our unique low-temperature, high-field magnetic force microscopy with photoexcitation, we directly observed a stable intermediate phase emerging and mediating the photoinduced first order metal-insulator transition in manganites. This phase is characteristic of low net magnetization and high resistivity. Our observations unveil the microscopic details of the photoinduced metal-insulator transition in manganites, which may be insightful to study first order metal-insulator transition in other condensed matter systems. This work was supported by National Key Research Program of China (2016YFA0300702), National Basic Research Program of China (973 Program) under the Grant No. 2013CB932901 and 2014CB921104; National Natural Science Foundation of China (11274071, 11504053).

Transition from a paramagnetic metallic to a cluster glass metallic state in electron-doped perovskite manganites

NASA Astrophysics Data System (ADS)

Maignan, A.; Martin, C.; Damay, F.; Raveau, B.; Hejtmanek, J.

1998-08-01

The study of Mn(IV)-rich manganites Ca1-xSmxMnO3 with low electron content corresponding to 0<=x<=0.12 demonstrates the large difference of their electronic and magnetic properties with that of Mn(III)-rich manganites. In particular, a metalliclike temperature dependence of the resistivity (ρ) is observed above TC, the smallest room-temperature ρ=10-3 Ω cm being reached for x=0.12. However increasing hopping energy with x suggests the creation of small polarons as eg electrons are injected into the Mn(IV) matrix. The thermopower (S) measurements confirm the increase of carriers with x and can be described within a single-band metal model. The ρ(T) and S(T) curves exhibit also a transition at a fixed temperature Tp~110 K for 0.075<=x<=0.12. Tp is related to the appearance of a ferromagnetic component as shown from T-dependent magnetization. Nevertheless, the ac-χ measurements reveal a complex behavior. CaMnO3 exhibits a weak ferromagnetic component (TC=122 K) whereas for Ca1-xSmxMnO3 (0manganites.

Detection of magnetic resonance signals using a magnetoresistive sensor

DOEpatents

Budker, Dmitry; Pines, Alexander; Xu, Shoujun; Hilty, Christian; Ledbetter, Micah P; Bouchard, Louis S

2013-10-01

A method and apparatus are described wherein a micro sample of a fluidic material may be assayed without sample contamination using NMR techniques, in combination with magnetoresistive sensors. The fluidic material to be assayed is first subject to pre-polarization, in one embodiment, by passage through a magnetic field. The magnetization of the fluidic material is then subject to an encoding process, in one embodiment an rf-induced inversion by passage through an adiabatic fast-passage module. Thereafter, the changes in magnetization are detected by a pair of solid-state magnetoresistive sensors arranged in gradiometer mode. Miniaturization is afforded by the close spacing of the various modules.

Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2

NASA Astrophysics Data System (ADS)

Li, Hui; Wang, Huan-Wen; He, Hongtao; Wang, Jiannong; Shen, Shun-Qing

2018-05-01

Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to -68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field-dependent current along the magnetic field, which may be induced by the Berry curvature of the band structure. This observation not only reveals unusual physical phenomena in Weyl and Dirac semimetals, but also finds additional transport signatures of Weyl and Dirac fermions other than negative magnetoresistance.

Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ye, Tianyu; Liu, Han -Chun; Wang, Zhuo

A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. As a result, for circularly polarized radiation, the oscillatory magnetoresistive response ismore » hardly sensitive to θ.« less

Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation

DOE PAGES

Ye, Tianyu; Liu, Han -Chun; Wang, Zhuo; ...

2015-10-09

A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. As a result, for circularly polarized radiation, the oscillatory magnetoresistive response ismore » hardly sensitive to θ.« less

A colossal impact enriched Mars' mantle with noble metals

NASA Astrophysics Data System (ADS)

Brasser, R.; Mojzsis, S. J.

2017-06-01

Once the terrestrial planets had mostly completed their assembly, bombardment continued by planetesimals left over from accretion. Highly siderophile element (HSE) abundances in Mars' mantle imply that its late accretion supplement was 0.8 wt %; Earth and the Moon obtained an additional 0.7 wt % and 0.02 wt %, respectively. The disproportionately high Earth/Moon accretion ratio is explicable by stochastic addition of a few remaining Ceres-sized bodies that preferentially targeted Earth. Here we show that Mars' late accretion budget also requires a colossal impact, a plausible visible remnant of which is the emispheric dichotomy. The addition of sufficient HSEs to the Martian mantle entails an impactor of at least 1200 km in diameter to have struck Mars before 4430 Ma, by which time crust formation was well underway. Thus, the dichotomy could be one of the oldest geophysical features of the Martian crust. Ejected debris could be the source material for its satellites.

Transport characteristics and colossal dielectric response of cadmium sulfide nanoparticles

NASA Astrophysics Data System (ADS)

Ahmad, Mushtaq; Rafiq, M. A.; Hasan, M. M.

2013-10-01

We report here the synthesis of ˜20 nm sized cadmium sulfide (CdS) nanoparticles via conventional solid state reaction at low temperature ˜200 °C and ambient pressure. X-ray diffraction and high resolution transmission electron microscopy analysis confirmed the synthesis of hexagonal phased nanoparticles. Impedance and electrical modulus investigations were carried out in the frequency range 20 Hz to 2 MHz and at temperature from 300 K to 400 K, which show the presence of bulk, grain boundary, and sub-grain boundary phases in CdS nanoparticles. Overlapped large polaron tunneling was the observed mechanism of charge carriers in used temperature range. The presence of colossal dielectric constant in the system is attributed to the Maxwell-Wagner type polarization. High and temperature dependent dielectric constants make the CdS nanoparticles efficient material to be used in capacitive energy storage devices.

The origin of dispersion of magnetoresistance of a domain wall spin valve

NASA Astrophysics Data System (ADS)

Sato, Jun; Matsushita, Katsuyoshi; Imamura, Hiroshi

2010-01-01

We theoretically study the current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nanocontact which is experimentally fabricated as current-confined-path (CCP) structure in a nano-oxide-layer (NOL). We solve the non-collinear spin diffusion equation by using the finite element method and calculate the MR ratio by evaluating the additional voltage drop due to the spin accumulation. We investigate the origin of dispersion of magnetoresistance by considering the effect of randomness of the size and distribution of the nanocontacts in the NOL. It is observed that the effect of randomness of the contact size is much larger than that of the contact distribution. Our results suggest that the origin of dispersion of magnetoresistance observed in the experiments is the randomness of the size of the nanocontacts in the NOL.

Effect of Synthesis Method of La1 - x Sr x MnO3 Manganite Nanoparticles on Their Properties

NASA Astrophysics Data System (ADS)

Shlapa, Yulia; Solopan, Sergii; Belous, Anatolii; Tovstolytkin, Alexandr

2018-01-01

Nanoparticles of lanthanum-strontium manganite were synthesized via different methods, namely, sol-gel method, precipitation from non-aqueous solution, and precipitation from reversal microemulsions. It was shown that the use of organic compounds and non-aqueous media allowed significantly decreasing of the crystallization temperature of nanoparticles, and the single-phased crystalline product was formed in one stage. Morphology and properties of nanoparticles depended on the method and conditions of the synthesis. The heating efficiency directly depended on the change in the magnetic parameters of nanoparticles, especially on the magnetization. Performed studies showed that each of these methods of synthesis can be used to obtain weakly agglomerated manganite nanoparticles; however, particles synthesized via sol-gel method are more promising for use as hyperthermia inducers. PACS: 61.46.Df 75.75.Cd 81.20. Fw

Anomalies of magnetoresistance of compounds with atomic clusters RB{sub 12} (R = Ho, Er, Tm, Lu)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sluchanko, N. E., E-mail: nes@lt.gpi.ru; Bogach, A. V.; Glushkov, V. V.

2009-04-15

The magnetoresistance and magnetization of single-crystal samples of rare-earth dodecaborides RB{sub 12} (R = Ho, Er, Tm, Lu) have been measured at low temperatures (1.8-35 K) in a magnetic field of up to 70 kOe. The effect of positive magnetoresistance that obeys the Kohler's rule {delta}{rho}/{rho} = f({rho}(0, 300 K)H/{rho}(0, T)) is observed for the nonmagnetic metal LuB{sub 12}. In the magnetic dodecaborides HoB{sub 12}, ErB{sub 12}, and TmB{sub 12}, three characteristic regimes of the magnetoresistance behavior have been revealed: the positive magnetoresistance effect similar to the case of LuB{sub 12} is observed at T > 25 K; in themore » range T{sub N} {<=} T {<=} 15 K, the magnetoresistance becomes negative and depends quadratically on the external magnetic field; and, finally, upon the transition to the antiferromagnetic phase (T < T{sub N}), the positive magnetoresistance is again observed and its amplitude reaches 150% for HoB{sub 12}. It has been shown that the observed anomalies of negative magnetoresistance in the paramagnetic phase can be explained within the Yosida model of conduction electron scattering by localized magnetic moments. The performed analysis confirms the formation of spin-polaron states in the 5d band in the vicinity of rare-earth ions in paramagnetic and magnetically ordered phases of RB{sub 12} and makes it possible to reveal a number of specific features in the transformation of the magnetic structure of the compounds under investigation.« less

Negative Oxygen Isotope Effect in Manganites with an Ordered Cation Arrangement in a High Magnetic Field

NASA Astrophysics Data System (ADS)

Taldenkov, A. N.; Snegirev, V. V.; Babushkina, N. A.; Kalitka, V. S.; Kaul', A. R.

2018-03-01

The oxygen isotope effect in PrBaMn2 16-18 O5.97 manganite with an ordered cation arrangement is studied. The field dependences of magnetic susceptibility and magnetization are measured in the temperature range 100-270 K and magnetic fields up to 32 T. A significant increase in the temperature of the spin-reorientation antiferromagnet-ferromagnet phase transition is detected in samples enriched in heavy oxygen 18O (negative isotope effect). The transition temperature and the isotope effect depend strongly on the magnetic field. An H-T phase diagram is plotted for samples with various isotope compositions. An analysis of the experimental results demonstrates that the detected negative isotope effect and the giant positive isotope effect revealed earlier in doped manganites have the same nature. The mechanisms of appearance of isotope effects are discussed in terms of the double exchange model under a polaron narrowing of the free carrier band.

Tuning spin transport properties and molecular magnetoresistance through contact geometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ulman, Kanchan; Narasimhan, Shobhana; Sheikh Saqr Laboratory, ICMS, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064

2014-01-28

Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips thanmore » to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its “closed” and “open” conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ∼5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ∼400%.« less

Tuning spin transport properties and molecular magnetoresistance through contact geometry

NASA Astrophysics Data System (ADS)

Ulman, Kanchan; Narasimhan, Shobhana; Delin, Anna

2014-01-01

Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its "closed" and "open" conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ˜5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ˜400%.

Magneto-Resistance in thin film boron carbides

NASA Astrophysics Data System (ADS)

Echeverria, Elena; Luo, Guangfu; Liu, J.; Mei, Wai-Ning; Pasquale, F. L.; Colon Santanta, J.; Dowben, P. A.; Zhang, Le; Kelber, J. A.

2013-03-01

Chromium doped semiconducting boron carbide devices were fabricated based on a carborane icosahedra (B10C2H12) precursor via plasma enhanced chemical vapor deposition, and the transition metal atoms found to dope pairwise on adjacent icosahedra site locations. Models spin-polarized electronic structure calculations of the doped semiconducting boron carbides indicate that some transition metal (such as Cr) doped semiconducting boron carbides may act as excellent spin filters when used as the dielectric barrier in a magnetic tunnel junction structure. In the case of chromium doping, there may be considerable enhancements in the magneto-resistance of the heterostructure. To this end, current to voltage curves and magneto-transport measurements were performed in various semiconducting boron carbide both in and out plane. The I-V curves as a function of external magnetic field exhibit strong magnetoresistive effects which are enhanced at liquid Nitrogen temperatures. The mechanism for these effects will be discussed in the context of theoretical calculations.

Enhancement of magnetoresistance by hydrogen ion treatment for current-perpendicular-to-plane giant magnetoresistive films with a current-confined-path nano-oxide layer

NASA Astrophysics Data System (ADS)

Yuasa, H.; Hara, M.; Murakami, S.; Fuji, Y.; Fukuzawa, H.; Zhang, K.; Li, M.; Schreck, E.; Wang, P.; Chen, M.

2010-09-01

We have enhanced magnetoresistance (MR) for current-perpendicular-to-plane giant-magnetoresistive (CPP-GMR) films with a current-confined-path nano-oxide layer (CCP-NOL). In order to realize higher purity in Cu for CCPs, hydrogen ion treatment (HIT) was applied as the CuOx reduction process. By applying the HIT process, an MR ratio was increased to 27.4% even in the case of using conventional FeCo magnetic layer, from 13.0% for a reference without the HIT process. Atom probe tomography data confirmed oxygen reduction by the HIT process in the CCP-NOL. The relationship between oxygen counts and MR ratio indicates that further oxygen reduction would realize an MR ratio greater than 50%.

Emergent ferroelectricity in disordered tri-color multilayer structure comprised of ferromagnetic manganites

NASA Astrophysics Data System (ADS)

Niu, Li-Wei; Chen, Chang-Le; Dong, Xiang-Lei; Xing, Hui; Luo, Bing-Cheng; Jin, Ke-Xin

2016-10-01

Multiferroic materials, showing the coexistence and coupling of ferroelectric and magnetic orders, are of great technological and fundamental importance. However, the limitation of single phase multiferroics with robust magnetization and polarization hinders the magnetoelectric effect from being applied practically. Magnetic frustration, which can induce ferroelectricity, gives rise to multiferroic behavior. In this paper, we attempt to construct an artificial magnetically frustrated structure comprised of manganites to induce ferroelectricity. A disordered stacking of manganites is expected to result in frustration at interfaces. We report here that a tri-color multilayer structure comprised of non-ferroelectric La0.9Ca0.1MnO3(A)/Pr0.85Ca0.15MnO3(B)/Pr0.85Sr0.15MnO3(C) layers with the disordered arrangement of ABC-ACB-CAB-CBA-BAC-BCA is prepared to form magnetoelectric multiferroics. The multilayer film exhibits evidence of ferroelectricity at room temperature, thus presenting a candidate for multiferroics. Project supported by the National Natural Science Foundation of China (Grant Nos. 61471301, 61078057, 51172183, 51402240, and 51471134), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20126102110045), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2015JQ5125), and the Fundamental Research Funds for the Central Universities, China (Grant No. 3102015ZY078).

A Magnetoresistive Tactile Sensor for Harsh Environment Applications

PubMed Central

Alfadhel, Ahmed; Khan, Mohammed Asadullah; Cardoso, Susana; Leitao, Diana; Kosel, Jürgen

2016-01-01

A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature. PMID:27164113

Magnetoresistance in organic semiconductors: Including pair correlations in the kinetic equations for hopping transport

NASA Astrophysics Data System (ADS)

Shumilin, A. V.; Kabanov, V. V.; Dediu, V. I.

2018-03-01

We derive kinetic equations for polaron hopping in organic materials that explicitly take into account the double occupation possibility and pair intersite correlations. The equations include simplified phenomenological spin dynamics and provide a self-consistent framework for the description of the bipolaron mechanism of the organic magnetoresistance. At low applied voltages, the equations can be reduced to those for an effective resistor network that generalizes the Miller-Abrahams network and includes the effect of spin relaxation on the system resistivity. Our theory discloses the close relationship between the organic magnetoresistance and the intersite correlations. Moreover, in the absence of correlations, as in an ordered system with zero Hubbard energy, the magnetoresistance vanishes.

Dielectric Properties of Tungsten Copper Barium Ceramic as Promising Colossal-Permittivity Material

NASA Astrophysics Data System (ADS)

Wang, Juanjuan; Chao, Xiaolian; Li, Guangzhao; Feng, Lajun; Zhao, Kang; Ning, Tiantian

2017-08-01

Ba(Cu0.5W0.5)O3 (BCW) ceramic has been fabricated and its dielectric properties investigated for use in energy-storage applications, revealing a very large dielectric constant (˜104) at 1 kHz. Moreover, the colossal-permittivity BCW ceramic exhibited fine microstructure and optimal temperature stability over a wide temperature range from room temperature to 500°C. The internal barrier layer capacitor mechanism was considered to be responsible for its high dielectric properties. Based on activation values, it is concluded that doubly ionized oxygen vacancies make a substantial contribution to the conduction and relaxation behaviors at grain boundaries. This study suggests that this kind of material has potential for use in high-density energy storage applications.

Tuning the magnetocaloric properties of La0.7Ca0.3MnO3 manganites through Ni-doping

NASA Astrophysics Data System (ADS)

Gómez, A.; Chavarriaga, E.; Supelano, I.; Parra, C. A.; Morán, O.

2018-04-01

The effect of Ni2+ doping on the magnetic and magnetocaloric properties of La0.7Ca0.3MnO3 manganites synthesized via the auto-combustion method is reported. The aim of studying Ni2+-substituted La0.7Ca0.3Mn1 - xNixO3 (x = 0 , 0.02 , 0.07, and 0.1) manganites was to explore the possibility of increasing the operating temperature range for the magnetocaloric effect through tuning of the magnetic transition temperature. X-ray diffraction analysis confirmed the phase purity of the synthesized samples. The substitution of Mn3+ ions by Ni2+ ions in the La0.7Ca0.3MnO3 lattice was also corroborated through this technique. The dependence of the magnetization on the temperature reveals that all the compositions exhibit a well-defined ferromagnetic to paramagnetic transition near the Curie temperature. A systematic decrease in the values of the Curie temperature is clearly observed upon Ni2+ doping. Probably the replacement of Mn3+ by Ni2+ ions in the La0.7Ca0.3MnO3 lattice weakens the Mn3+-O-Mn4+ double exchange interaction, which leads to a decrease in the transition temperature and the magnetic moment in the samples. By using Arrott plots, it was found that the phase transition from ferromagnetic to paramagnetic is second order. The maximum magnetic entropy changes observed for the x = 0 , 0.02 , 0.07, and 0.1 composites was 0.85, 0.77, 0.63, and 0.59 J/kg K, respectively, under a magnetic field of 1.5 T. In general, it was verified that the magnetic entropy change achieved for La0.7Ca0.3Mn1 - xNixO3 manganites synthesized via the auto-combustion method is higher than those reported for other manganites with comparable Ni2+-doping levels synthesized via standard solid state reaction. The addition of Ni2+ increases the value of the relative cooling power as compared to that of the parent compound. The highest value of this parameter (∼60 J/kg) is found for a Ni-doping level of 2% around 230 K in a field of 1.5 T.

Angular Magnetoresistance and Hall Measurements in New Dirac Material, ZrSiS

NASA Astrophysics Data System (ADS)

Ali, Mazhar; Schoop, Leslie; Lotsch, Bettina; Parkin, Stuart

Dirac and Weyl materials have shot to the forefront of condensed matter research in the last few years. Recently, the square-net material, ZrSiS, was theorized and experimentally shown (via ARPES) to host several highly dispersive Dirac cones, including the first Dirac cone demanded by non-symmorphic symmetry in a Si square net. Here we report the magnetoresistance and Hall Effect measurements in this compound. ZrSiS samples with RRR = 40 were found to have MR values up to 6000% at 2 K, be predominantly p-type with a carrier concentration of ~8 x 1019 cm-3 and mobility ~8500 cm2/Vs. Angular magnetoresistance measurements reveal a peculiar behavior with multiple local maxima, depending on field strength, indicating of a sensitive and sensitive Fermi surface. SdH oscillations analysis confirms Hall and angular magnetoresistance measurements. These results, in the context of the theoretical and ARPES results, will be discussed.

Magnetization reversal in exchange biased Co/CoO probed with anisotropic magnetoresistance

NASA Astrophysics Data System (ADS)

Gredig, Thomas; Krivorotov, Ilya N.; Dahlberg, E. Dan

2002-05-01

The magnetization reversal in exchange coupled polycrystalline Co/CoO bilayers has been investigated as a function of CoO thickness using anisotropic magnetoresistance as a probe. The anisotropic magnetoresistance (AMR) was measured during the magnetization reversal and it was used to determine the orientation of the magnetization. For thin CoO layers large training effects were present; ergo the first hysteresis loop after field cooling was not the same as the second. The magnitude of the observed training was found to decrease with increasing CoO thickness. In the samples where substantial training was observed, the first magnetization reversal was dominated by nucleation of reversed domains. For the reversal from the antiparallel state back to the parallel direction, the AMR is consistent with a rotation process. In thicker CoO films where the training was less, the asymmetry was drastically reduced. A simple model that couples the antiferromagnetic grains to the ferromagnetic layer simulates qualitatively the observed magnetoresistance.

Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors

PubMed Central

Arias, Sergio Iván Ravello; Muñoz, Diego Ramírez; Moreno, Jaime Sánchez; Cardoso, Susana; Ferreira, Ricardo; de Freitas, Paulo Jorge Peixeiro

2013-01-01

Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function Zt(if) is obtained considering it as the relationship between sensor output voltage and input sensing current, Zt(jf)=Vo,sensor(jf)/Isensor(jf). The study has been extended to various magnetoresistance sensors based in different technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), spin-valve (GMR-SV) and tunnel magnetoresistance (TMR). The resulting modeling shows two predominant behaviors, the low-pass and the inverse low-pass with fractional index different from the classical integer response. The TMR technology with internal magnetization offers the best dynamic and sensitivity properties opening the way to develop actual industrial applications. PMID:24351648

Colossal dielectric constant and relaxation behaviors in Pr:SrTiO3 ceramics

NASA Astrophysics Data System (ADS)

Liu, Cheng; Liu, Peng; Zhou, Jian-ping; He, Ying; Su, Li-na; Cao, Lei; Zhang, Huai-wu

2010-05-01

Sr1-xPrxTiO3 ceramics (0.00≤x≤0.03) were prepared by a traditional solid-state reaction method. Two relaxation processes (marked as A and B) of the Sr0.09Pr0.01TiO3 ceramics were investigated by analyzing the Ea values obtained from the Arrhenius law. Colossal dielectric constant (CDC) was first obtained in Sr0.09Pr0.01TiO3 ceramics, whose permittivity was up to 3000 (1 kHz, room temperature), greater than that of pure SrTiO3 ceramics and samples with more Pr addition (x =0.02 and 0.03). This CDC behavior was related to the internal barrier layer capacitance mechanism.

Origin of the extremely large magnetoresistance in the semimetal YSb

DOE PAGES

Xu, J.; Ghimire, N. J.; Jiang, J. S.; ...

2017-08-29

Extremely large magnetoresistance (XMR) was recently discovered in YSb but its origin, along with that of many other XMR materials, is an active subject of debate. Here we demonstrate that YSb, with a cubic crystalline lattice and anisotropic bulk electron Fermi pockets, can be an excellent candidate for revealing the origin of XMR. We carried out angle dependent Shubnikov – de Haas quantum oscillation measurements to determine the volume and shape of the Fermi pockets. In addition, by investigating both Hall and longitudinal magnetoresistivities, we reveal that the origin of XMR in YSb lies in its carrier high mobility withmore » a diminishing Hall factor that is obtained from the ratio of the Hall and longitudinal magentoresistivities. The high mobility leads to a strong magnetic field dependence of the longitudinal magnetoconductivity while a diminishing Hall factor reveals the latent XMR hidden in the longitudinal magnetoconductivity whose inverse has a nearly quadratic magnetic-field dependence. The Hall factor highlights the deviation of the measured magnetoresistivity from its full potential value and provides a general formulation to reveal the origin of XMR behavior in high mobility materials and of nonsaturating MR behavior as a whole. Our approach can be readily applied to other XMR materials.« less

Predicition and Discovery of High Tunneling Magnetoresistance in Magnetic Tunnel Junctions with Crystalline Barriers

NASA Astrophysics Data System (ADS)

Butler, William

2005-03-01

Tunneling magnetoresistance in excess of 200% has recently been observed in magnetic tunnel junctions using bcc Fe or bcc CoFe electrodes with crystalline MgO tunnel barriers[1,2]. These results demonstrate that tunneling magnetoresistance depends on more than the ``electrode polarization''. This talk will describe the calculations that predicted high TMR in these and other systems[3,4,5]. These calculations helped us to understand certain principles that may lead to high TMR through coherent electron tunneling. They can be briefly summarized as follows: (1) If the symmetry of a Bloch state can be preserved as electrons cross the interfaces between the electrode and the tunnel barrier, this be used to advantage for spin filtering. (2) Evanescent states of different symmetries decay at different rates in the barrier. (3) Interfacial bonding can be very important in determining the probability that an electron can traverse the interface. (4) Electrons of disallowed symmetry cannot propagate in an electrode. Once these simple principles are understood, simple band codes can be used to screen and to develop heterostructures with the proper symmetries to obtain high TMR. [1] S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant AND S.-H. Yang, ``Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers,'' Nature Materials, Advance Online Publication [2] S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, K. Ando, ``Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions,'' Nature Materials, Advance Online Publication [3] W. H. Butler, X.-G. Zhang, T. C. Schulthess, and J. M. MacLaren, ``Spin-dependent tunneling conductance of Fe | MgO | Fe sandwiches'' Phys. Rev. B 63, 054416 (2001) [4] J. Mathon, A. Umerski, ``Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction,'' Phys. Rev. B 63, 220403(R) (2001). [5] X.-G. Zhang, and W. H. Butler, ``Large magnetoresistance in

Recent observations of negative longitudinal magnetoresistance in semimetal

NASA Astrophysics Data System (ADS)

Xu, Xi-Tong; Jia, Shuang

2016-11-01

The discovery of Dirac semimetal and Weyl semimetal has motivated a growing passion for investigating the unique magneto-transport properties in the topological materials. A Weyl semimetal can host Weyl fermions as its low-energy quasi-particle excitations, and therefore perform exotic features analogous to those in high-energy physics, such as the violation of the chiral charge conservation known as the chiral anomaly. One of the electrical transport signatures of the chiral anomaly is the Adler-Bell-Jackiw (ABJ) anomaly which presents as a negative magnetoresistance when the magnetic field and the current are parallel. Very recently, numerous experiments reported negative longitudinal magnetoresistance (NLMR) in topological materials, but the details of the measurement results are various. Here the materials and the corresponding experiment results are briefly reviewed. Besides the plausible explanation of the ABJ anomaly, some other origins of the NLMR are also discussed. Project supported by the National Basic Research Program of China (Grant Nos. 2013CB921901 and 2014CB239302).

Temperature dependence of magnetoresistance in copper single crystals

NASA Astrophysics Data System (ADS)

Bian, Q.; Niewczas, M.

2018-03-01

Transverse magnetoresistance of copper single crystals has been measured in the orientation of open-orbit from 2 K to 20 K for fields up to 9 T. The experimental Kohler's plots display deviation between individual curves below 16 K and overlap in the range of 16 K-20 K. The violation of the Kohler's rule below 16 K indicates that the magnetotransport can not be described by the classical theory of electron transport on spherical Fermi surface with a single relaxation time. A theoretical model incorporating two energy bands, spherical and cylindrical, with different relaxation times has been developed to describe the magnetoresistance data. The calculations show that the electron-phonon scattering rates at belly and neck regions of the Fermi surface have different temperature dependencies, and in general, they do not follow T3 law. The ratio of the relaxation times in belly and neck regions decreases parabolically with temperature as A - CT2 , with A and C being constants.

NiFeCo/Cu superlattices with high magnetoresistive sensitivity and weak hysteresis

NASA Astrophysics Data System (ADS)

Bannikova, N. S.; Milyaev, M. A.; Naumova, L. I.; Krinitsina, T. P.; Patrakov, E. I.; Proglyado, V. V.; Chernyshova, T. A.; Ustinov, V. V.

2016-10-01

The microstructure and the magetoresistive characteristics of [NiFeCo/Cu]8 superlattices prepared by magnetron sputtering with various thickness of the buffer NiFeCr layer and exhibiting a giant magnetoresistive effect have been studied. It has been found that these nanostructures are formed with a strong or weak hysteresis depending on the structure (bcc or fcc) formed in the NiFeCr buffer layer. The method of the substantial decrease in the hysteresis loop width of the magnetoresistance by using the composite Ta/NiFeCr buffer layer has been suggested.

Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mani, R. G.; Ramanayaka, A. N.; Wegscheider, W.

2013-12-04

We examine the linear polarization sensitivity of the radiation- induced magneto-resistance oscillations by investigating the effect of rotating in-situ the electric field of linearly polarized microwaves relative to the current, in the GaAs/AlGaAs system. We find that the frequency and the phase of the photo-excited magneto-resistance oscillations are insensitive to the polarization. On the other hand, the amplitude of the resistance oscillations are strongly sensitive to the relative orientation between the microwave antenna and the current-axis in the specimen.

Synthesis and characterization of Copper/Cobalt/Copper/Iron nanostructurated films with magnetoresistive properties

NASA Astrophysics Data System (ADS)

Ciupinǎ, Victor; Prioteasa, Iulian; Ilie, Daniela; Manu, Radu; Petrǎşescu, Lucian; Tutun, Ştefan Gabriel; Dincǎ, Paul; MustaÅ£ǎ, Ion; Lungu, Cristian Petricǎ; Jepu, IonuÅ£; Vasile, Eugeniu; Nicolescu, Virginia; Vladoiu, Rodica

2017-02-01

Copper/Cobalt/Copper/Iron thin films were synthesized in order to obtain nanostructured materials with special magnetoresistive properties. The multilayer films were deposited on silicon substrates. In this respect we used Thermionic Vacuum Arc Discharge Method (TVA). The benefit of this deposition technique is the ability to have a controlled range of thicknesses starting from few nanometers to hundreds of nanometers. The purity of the thin films was insured by a high vacuum pressure and a lack of any kind of buffer gas inside the coating chamber. The morphology and structure of the thin films were analyzed using Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) Techniques and Energy Dispersive X-ray Spectroscopy (EDXS). Magnetoresistive measurement results depict that thin films possess Giant Magneto-Resistance Effect (GMR). Magneto-Optic-Kerr Effect (MOKE) studies were performed to characterize the magnetic properties of these thin films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Tao; Yang, Shengwei; Liu, Yukuai

Magnetic and resistive anisotropies have been studied for the La{sub 0.325}Pr{sub 0.3}Ca{sub 0.375}MnO{sub 3} films with different thicknesses grown on low symmetric (011)-oriented (LaAlO{sub 3}){sub 0.3}(SrAl{sub 0.5}Ta{sub 0.5}O{sub 3}){sub 0.7} substrates. In the magnetic and electronic phase separation region, a colossal anisotropic resistivity (AR) of ∼10{sup 5}% and an anomalous large anisotropic magnetoresistance can be observed for 30 nm film. However, for 120 nm film, the maximum AR decreases significantly (∼2 × 10{sup 3}%) due to strain relaxation. The colossal AR is strongly associated with the oriented formation of magnetic domains, and the features of the strain effects are believed to bemore » useful for the design of artificial materials and devices.« less

Cr doping induced negative transverse magnetoresistance in C d3A s2 thin films

NASA Astrophysics Data System (ADS)

Liu, Yanwen; Tiwari, Rajarshi; Narayan, Awadhesh; Jin, Zhao; Yuan, Xiang; Zhang, Cheng; Chen, Feng; Li, Liang; Xia, Zhengcai; Sanvito, Stefano; Zhou, Peng; Xiu, Faxian

2018-02-01

The magnetoresistance of a material conveys various dynamic information about charge and spin carriers, inspiring both fundamental studies in physics and practical applications such as magnetic sensors, data storage, and spintronic devices. Magnetic impurities play a crucial role in the magnetoresistance as they induce exotic states of matter such as the quantum anomalous Hall effect in topological insulators and tunable ferromagnetic phases in dilute magnetic semiconductors. However, magnetically doped topological Dirac semimetals are hitherto lacking. Here, we report a systematic study of Cr-doped C d3A s2 thin films grown by molecular-beam epitaxy. With the Cr doping, C d3A s2 thin films exhibit unexpected negative transverse magnetoresistance and strong quantum oscillations, bearing a trivial Berry's phase and an enhanced effective mass. More importantly, with ionic gating the magnetoresistance of Cr-doped C d3A s2 thin films can be drastically tuned from negative to positive, demonstrating the strong correlation between electrons and the localized spins of the Cr impurities, which we interpret through the formation of magnetic polarons. Such a negative magnetoresistance under perpendicular magnetic field and its gate tunability have not been observed previously in the Dirac semimetal C d3A s2 . The Cr-induced topological phase transition and the formation of magnetic polarons in C d3A s2 provide insights into the magnetic interaction in Dirac semimetals as well as their potential applications in spintronics.

Allicat magnetoresistive head design and performance

NASA Astrophysics Data System (ADS)

Hannon, David; Krounbi, Mohamed; Christner, Jodie

1994-03-01

The general design features of the magnetoresistive (MR) merged head are described and compared to the earlier MR piggy-back head called Corsair. Examples of static, magnetic, and error rate testing are given. Dual track profiles show the read-narrow feature of the MR head. Stability of the signal with write disturbance shows the effectiveness of the hard-bias longitudinal biasing. Error rate versus off-track position indicates the robustness of the file design.

Tunnel magnetoresistance of ferrocene molecules

NASA Astrophysics Data System (ADS)

Matsuura, Yukihito

2018-01-01

The spin transport in ferrocene molecules has been examined by using the nonequilibrium Green's function formalism with density functional theory. The ferrocene molecules were sandwiched between the two nickel electrodes in a parallel magnetic configuration, which enhanced the current in comparison with that in an antiparallel spin state and resulting in tunnel magnetoresistance (TMR). The current, having an opposite spin state to that of the ferromagnetic electrode, was the main channel for electron transport. In addition, it became clear that ferrocenylene molecules, having a fulvalene structure with an extended π-conjugation, enhanced the TMR effect.

Morphology and Curie temperature engineering in crystalline La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films on Si by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nori, Rajashree, E-mail: rajsre@ee.iitb.ac.in; Ganguly, U.; Ravi Chandra Raju, N.

2014-01-21

Of all the colossal magnetoresistant manganites, La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) exhibits magnetic and electronic state transitions above room temperature, and therefore holds immense technological potential in spintronic devices and hybrid heterojunctions. As the first step towards this goal, it needs to be integrated with silicon via a well-defined process that provides morphology and phase control, along with reproducibility. This work demonstrates the development of pulsed laser deposition (PLD) process parameter regimes for dense and columnar morphology LSMO films directly on Si. These regimes are postulated on the foundations of a pressure-distance scaling law and their limits are defined postmore » experimental validation. The laser spot size is seen to play an important role in tandem with the pressure-distance scaling law to provide morphology control during LSMO deposition on lattice-mismatched Si substrate. Additionally, phase stability of the deposited films in these regimes is evaluated through magnetometry measurements and the Curie temperatures obtained are 349 K (for dense morphology) and 355 K (for columnar morphology)—the highest reported for LSMO films on Si so far. X-ray diffraction studies on phase evolution with variation in laser energy density and substrate temperature reveals the emergence of texture. Quantitative limits for all the key PLD process parameters are demonstrated in order enable morphological and structural engineering of LSMO films deposited directly on Si. These results are expected to boost the realization of top-down and bottom-up LSMO device architectures on the Si platform for a variety of applications.« less

Ternary NiFeX as soft biasing film in a magnetoresistive sensor

NASA Astrophysics Data System (ADS)

Chen, Mao-Min; Gharsallah, Neila; Gorman, Grace L.; Latimer, Jacquie

1991-04-01

The properties of NiFeX ternary films (X being Al, Au, Nb, Pd, Pt, Si, and Zr) have been studied for soft-film biasing of the magnetoresistive (MR) trilayer sensor. In general, the addition of the element X into the NiFe alloy film decreases the saturation magnetization Bs and magnetoresistance coefficient of the film, while increasing the film's electrical resistivity ρ. One of the desirable properties of a soft film for biasing is high sheet resistance for minimum current flow. A figure of merit Bsρ that takes into account both the rate of increase in Bs and the rate of decrease in ρ when adding X element was derived to compare the effectiveness of various X elements in reducing the current shunting through the soft-film layer. Using this criterion, NiFeNb and NiFeZr emerge as good soft-film materials having a maximum sheet resistance relative to the MR layer. Other critical properties such as magnetoresistance coefficient, magnetostriction, coercivity, and anisotropy field were also examined and are discussed in this paper.

Voltage-Controllable Colossal Magnetocrystalline Anisotropy in Single Layer Dichalcogenides

NASA Astrophysics Data System (ADS)

Sui, Xuelei; Hu, Tao; Wang, Jianfeng; Gu, Bing-Lin; Duan, Wenhui; Miao, Mao-Sheng

Materials with large magnetocrystalline anisotropy and strong electric field effects are in great need for new types of memory devices that are based on electric field control of spin orientations. Instead of using modified transition metal films, we propose that some monolayer transition metal dichalcogenides are ideal candidate materials for this purpose. Using density functional calculations, we illustrate that they exhibit not only exceedingly large magnetocrystalline anisotropy (MCA) but also colossal voltage modulation under external field. Especially, spins in some materials like CrSe2 and FeSe2, which is strongly preferred to in-plane orientation, can be totally switched to out-of-plane direction. The effect is attributed to the large band character alteration of transition metal d-states around the Fermi level by electric field. We further demonstrate that strain can also greatly change MCA, and can help to improve the modulation efficiency while combining with electric field. Acknowledge the support of the Ministry of Science and Technology of China (Grant No.2016YFA0301001), and the National Natural Science Foundation of China (Grants No. 11674188 and 11334006), NSF-funded XSEDE resources (TG-DMR130005) especially on Stampede.

Magnetoresistive flux focusing eddy current flaw detection

NASA Technical Reports Server (NTRS)

Wincheski, Russell A. (Inventor); Simpson, John W. (Inventor); Namkung, Min (Inventor)

2005-01-01

A giant magnetoresistive flux focusing eddy current device effectively detects deep flaws in thick multilayer conductive materials. The probe uses an excitation coil to induce eddy currents in conducting material perpendicularly oriented to the coil's longitudinal axis. A giant magnetoresistive (GMR) sensor, surrounded by the excitation coil, is used to detect generated fields. Between the excitation coil and GMR sensor is a highly permeable flux focusing lens which magnetically separates the GMR sensor and excitation coil and produces high flux density at the outer edge of the GMR sensor. The use of feedback inside the flux focusing lens enables complete cancellation of the leakage fields at the GMR sensor location and biasing of the GMR sensor to a location of high magnetic field sensitivity. In an alternate embodiment, a permanent magnet is positioned adjacent to the GMR sensor to accomplish the biasing. Experimental results have demonstrated identification of flaws up to 1 cm deep in aluminum alloy structures. To detect deep flaws about circular fasteners or inhomogeneities in thick multilayer conductive materials, the device is mounted in a hand-held rotating probe assembly that is connected to a computer for system control, data acquisition, processing and storage.

Magnetoresistive Flux Focusing Eddy Current Flaw Detection

NASA Technical Reports Server (NTRS)

Wincheski, Russell A. (Inventor); Namkung, Min (Inventor); Simpson, John W. (Inventor)

2005-01-01

A giant magnetoresistive flux focusing eddy current device effectively detects deep flaws in thick multilayer conductive materials. The probe uses an excitation coil to induce eddy currents in conducting material perpendicularly oriented to the coil s longitudinal axis. A giant magnetoresistive (GMR) sensor, surrounded by the excitation coil, is used to detect generated fields. Between the excitation coil and GMR sensor is a highly permeable flux focusing lens which magnetically separates the GMR sensor and excitation coil and produces high flux density at the outer edge of the GMR sensor. The use of feedback inside the flux focusing lens enables complete cancellation of the leakage fields at the GMR sensor location and biasing of the GMR sensor to a location of high magnetic field sensitivity. In an alternate embodiment, a permanent magnet is positioned adjacent to the GMR sensor to accomplish the biasing. Experimental results have demonstrated identification of flaws up to 1 cm deep in aluminum alloy structures. To detect deep flaws about circular fasteners or inhomogeneities in thick multi-layer conductive materials, the device is mounted in a hand-held rotating probe assembly that is connected to a computer for system control, data acquisition, processing and storage.

Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system

DOE PAGES

Wang, Zhuo; Samaraweera, R. L.; Reichl, C.; ...

2016-12-07

Electron-heating induced by a tunable, supplementary dc-current (I dc) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown to progressively change from positive to negative with increasing Idc, yielding negative giant-magnetoresistance at the lowest temperature and highest I dc. A two-term Drude model successfully fits the data at all Idc and T. The results indicate that carrier heating modifies a conductivity correction σ 1, which undergoes sign reversal from positive to negative with increasing I dc, and this is responsible for the observed crossover from positive-more » to negative- magnetoresistance, respectively, at the highest B.« less

Self-consistent study of local and nonlocal magnetoresistance in a YIG/Pt bilayer

NASA Astrophysics Data System (ADS)

Wang, Xi-guang; Zhou, Zhen-wei; Nie, Yao-zhuang; Xia, Qing-lin; Guo, Guang-hua

2018-03-01

We present a self-consistent study of the local spin Hall magnetoresistance (SMR) and nonlocal magnon-mediated magnetoresistance (MMR) in a heavy-metal/magnetic-insulator heterostructure at finite temperature. We find that the thermal fluctuation of magnetization significantly affects the SMR. It appears unidirectional with respect to the direction of electrical current (or magnetization). The unidirectionality of SMR originates from the asymmetry of creation or annihilation of thermal magnons induced by the spin Hall torque. Also, a self-consistent model can well describe the features of MMR.

Real & Financial Sectors, ``koq Financenaann..'' & Elbio Dagotto's Interactions

NASA Astrophysics Data System (ADS)

Maksoed, Wh-

2016-10-01

In conjunctions between PMRI/Pendidikan Matematika Realistik Indonesia fom Dr. RK Sembiring to ``ASTRANOMICS'': the New Reality in Business Aviation herewith provided `interaction between real & financial sector' and financialisation from Heinrich Bortis: ``the Real & Financial Sector of a Monetary Production Economy in the perspective of classical-Keynesian political economy'' ever specifies ``sector Riil'' from HE. Mr. Ir. Aburizal Bakrie. Instead describes the context of CMR/Colossal Magnetoresistance cq Carlos SLIM, the richest entrepreneur in the world 2014 also obtaines Dagotto & Tokura: ``Strongly correlated Electronic Materials: Present & Future'',MRS Bulletin, Nov, 2008. Ever existed of UN Secretary General Kofie Atta Annan, for Lih-AT TA-ruh di mana?'' are ```koq Financenaann..?'' in-between conjunctions. CMR are other notions of GiantMagnetoresistance from Fert & Grundberg who awarded with Nobel Prize in Physics, 2007. Heartfelt Gratitudes to HE. Mr. Prof. Ir. HANDOJO.

Magnetoresistive sensors based on the elasticity of domain walls.

PubMed

Zhang, Xueying; Vernier, Nicolas; Cao, Zhiqiang; Leng, Qunwen; Cao, Anni; Ravelosona, Dafine; Zhao, Weisheng

2018-06-19

Magnetic sensors based on the magnetoresistance effects have a promising application prospect due to their excellent sensitivity and advantages in terms of the integration. However, competition between higher sensitivity and larger measuring range remains a problem. Here, we propose a novel mechanism for the design of magnetoresistive sensors: probing the perpendicular field by detecting the expansion of the elastic magnetic Domain Wall (DW) in the free layer of a spin valve or a magnetic tunnel junction. Performances of devices based on this mechanism, such as the sensitivity and the measuring range can be tuned by manipulating the geometry of the device, without changing the intrinsic properties of the material, thus promising a higher integration level and a better performance. The mechanism is theoretically explained based on the experimental results. Two examples are proposed and their functionality and performances are verified via micromagnetic simulation. © 2018 IOP Publishing Ltd.

Structural and electronic transformations in substituted La-Sr manganites depending on cations and oxygen content

NASA Astrophysics Data System (ADS)

Karpasyuk, Vladimir; Badelin, Alexey; Merkulov, Denis; Derzhavin, Igor; Estemirova, Svetlana

2018-05-01

In the present research experimental data are obtained for the Jahn-Teller O‧ phase formation, phase transformation "orthorhombic-rhombohedral structure" and the change of the conductance type in the systems of manganites La3+1-c+xSr2+c-xMn3+1-c-x-2γMn4+c+2γZn2+xO3+γ, La3+1-c-xSr2+c+xMn3+1-c-x-2γMn4+c+2γGe4+xO3+γ, La3+1-cSr2+cMn3+1-x-c-2γMn4+c+2γ(Zn2+0.5Ge4+0.5)xO3+γ, where Mn4+ ions concentration is independent of "x". Ceramic samples were sintered in air at 1473 K. As-sintered samples had an excess of oxygen content. In order to provide stoichiometric oxygen content, the samples were annealed at 1223 K and partial pressure of oxygen PO2 = 10-1 Pа. Structural characteristics of the O‧ phase were obtained. The position of the phase boundary "orthorhombic-rhombohedral structure" and the temperature of the conductance type change depending on the cation composition of manganites and oxygen content were determined. Possible approaches to the interpretation of experimental results were suggested.

Magnetically-driven colossal supercurrent enhancement in InAs nanowire Josephson junctions

PubMed Central

Tiira, J.; Strambini, E.; Amado, M.; Roddaro, S.; San-Jose, P.; Aguado, R.; Bergeret, F. S.; Ercolani, D.; Sorba, L.; Giazotto, F.

2017-01-01

The Josephson effect is a fundamental quantum phenomenon where a dissipationless supercurrent is introduced in a weak link between two superconducting electrodes by Andreev reflections. The physical details and topology of the junction drastically modify the properties of the supercurrent and a strong enhancement of the critical supercurrent is expected to occur when the topology of the junction allows an emergence of Majorana bound states. Here we report charge transport measurements in mesoscopic Josephson junctions formed by InAs nanowires and Ti/Al superconducting leads. Our main observation is a colossal enhancement of the critical supercurrent induced by an external magnetic field applied perpendicular to the substrate. This striking and anomalous supercurrent enhancement cannot be described by any known conventional phenomenon of Josephson junctions. We consider these results in the context of topological superconductivity, and show that the observed critical supercurrent enhancement is compatible with a magnetic field-induced topological transition. PMID:28401951

Photoinduced metal-to-insulator transition in a manganite thin film.

PubMed

Takubo, N; Onishi, I; Takubo, K; Mizokawa, T; Miyano, K

2008-10-24

A persistent photoinduced metal-to-insulator transition has been confirmed in a manganite thin film, Pr_(0.55)(Ca_(0.75)Sr_(0.25))_(0.45)MnO3, near a multicritical point by monitoring with transport measurements and x-ray photoemission spectroscopy. Together with the previously reported reverse effect, the photoinduced insulator-to-metal transition, it is found that the relative stability of the metallic and insulating phases interchanges around 80 K in the middle of a very wide hysteresis loop, which is a manifestation of the large potential barrier due to the long-range elastic energy. It is shown that photons are much more effective in overcoming the barrier via the electronically excited intermediate states than via the heat mode.

Distinctive uniaxial magnetic anisotropy and positive magnetoresistance in (110)-oriented Fe3O4 films

NASA Astrophysics Data System (ADS)

Dho, Joonghoe; Kim, Byeong-geon; Ki, Sanghoon

2015-04-01

Magnetite (Fe3O4) films were synthesized on (110)-oriented MgO, MgAl2O4, and SrTiO3 substrates for comparative studies of the substrates' effects on magnetic and magnetoresistance properties of the films. For the [-110] direction, the hysteresis loops of the Fe3O4 film on MgAl2O4 exhibited a good squareness with the largest coercivity of ˜1090 Oe, and the ratio of remanent magnetization to saturation magnetization was ˜0.995. For the [001] direction, positive magnetoresistance in weak magnetic fields was most distinct for the (110) SrTiO3 substrate with the largest lattice mismatch. Positive magnetoresistance in the (110) Fe3O4 films was presumably affected by imperfect atomic arrangements at anti-phase boundaries.

Coexistence of colossal stress and texture gradients in sputter deposited nanocrystalline ultra-thin metal films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuru, Yener; Welzel, Udo; Mittemeijer, Eric J.

2014-12-01

This paper demonstrates experimentally that ultra-thin, nanocrystalline films can exhibit coexisting colossal stress and texture depth gradients. Their quantitative determination is possible by X-ray diffraction experiments. Whereas a uniform texture by itself is known to generally cause curvature in so-called sin{sup 2}ψ plots, it is shown that the combined action of texture and stress gradients provides a separate source of curvature in sin{sup 2}ψ plots (i.e., even in cases where a uniform texture does not induce such curvature). On this basis, the texture and stress depth profiles of a nanocrystalline, ultra-thin (50 nm) tungsten film could be determined.

Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.

PubMed

Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

2012-06-29

Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

Lab-on-Chip Cytometry Based on Magnetoresistive Sensors for Bacteria Detection in Milk

PubMed Central

Fernandes, Ana C.; Duarte, Carla M.; Cardoso, Filipe A.; Bexiga, Ricardo.; Cardoso, Susana.; Freitas, Paulo P.

2014-01-01

Flow cytometers have been optimized for use in portable platforms, where cell separation, identification and counting can be achieved in a compact and modular format. This feature can be combined with magnetic detection, where magnetoresistive sensors can be integrated within microfluidic channels to detect magnetically labelled cells. This work describes a platform for in-flow detection of magnetically labelled cells with a magneto-resistive based cell cytometer. In particular, we present an example for the validation of the platform as a magnetic counter that identifies and quantifies Streptococcus agalactiae in milk. PMID:25196163

Lab-on-chip cytometry based on magnetoresistive sensors for bacteria detection in milk.

PubMed

Fernandes, Ana C; Duarte, Carla M; Cardoso, Filipe A; Bexiga, Ricardo; Cardoso, Susana; Freitas, Paulo P

2014-08-21

Flow cytometers have been optimized for use in portable platforms, where cell separation, identification and counting can be achieved in a compact and modular format. This feature can be combined with magnetic detection, where magnetoresistive sensors can be integrated within microfluidic channels to detect magnetically labelled cells. This work describes a platform for in-flow detection of magnetically labelled cells with a magneto-resistive based cell cytometer. In particular, we present an example for the validation of the platform as a magnetic counter that identifies and quantifies Streptococcus agalactiae in milk.

Negative Magnetoresistance in Viscous Flow of Two-Dimensional Electrons.

PubMed

Alekseev, P S

2016-10-14

At low temperatures, in very clean two-dimensional (2D) samples, the electron mean free path for collisions with static defects and phonons becomes greater than the sample width. Under this condition, the electron transport occurs by formation of a viscous flow of an electron fluid. We study the viscous flow of 2D electrons in a magnetic field perpendicular to the 2D layer. We calculate the viscosity coefficients as the functions of magnetic field and temperature. The off-diagonal viscosity coefficient determines the dispersion of the 2D hydrodynamic waves. The decrease of the diagonal viscosity in magnetic field leads to negative magnetoresistance which is temperature and size dependent. Our analysis demonstrates that this viscous mechanism is responsible for the giant negative magnetoresistance recently observed in the ultrahigh-mobility GaAs quantum wells. We conclude that 2D electrons in those structures in moderate magnetic fields should be treated as a viscous fluid.

Negative Magnetoresistance in Viscous Flow of Two-Dimensional Electrons

NASA Astrophysics Data System (ADS)

Alekseev, P. S.

2016-10-01

At low temperatures, in very clean two-dimensional (2D) samples, the electron mean free path for collisions with static defects and phonons becomes greater than the sample width. Under this condition, the electron transport occurs by formation of a viscous flow of an electron fluid. We study the viscous flow of 2D electrons in a magnetic field perpendicular to the 2D layer. We calculate the viscosity coefficients as the functions of magnetic field and temperature. The off-diagonal viscosity coefficient determines the dispersion of the 2D hydrodynamic waves. The decrease of the diagonal viscosity in magnetic field leads to negative magnetoresistance which is temperature and size dependent. Our analysis demonstrates that this viscous mechanism is responsible for the giant negative magnetoresistance recently observed in the ultrahigh-mobility GaAs quantum wells. We conclude that 2D electrons in those structures in moderate magnetic fields should be treated as a viscous fluid.

Large magnetoresistance in Fe3O4/molecule nanoparticles

NASA Astrophysics Data System (ADS)

Wang, S.; Yue, F. J.; Lin, L.; Shi, Y. J.; Wu, D.

2010-08-01

In this work, we successfully fabricate Fe3O4 nanoparticles self-assembled with molecules to explore a new approach of studying the molecular spintronics. Fourier transform infrared spectroscopy measurements indicate that one monolayer molecules chemically bonds to the Fe3O4 nanoparticles and the physically absorbed molecules do not exist in the samples. The magnetoresistance (MR) of molecule fully coated ~10 nm size nanoparticles is up to 7.3% at room temperature and 17.5% at 115 K under a field of 5.8 kOe. And the MR ratio is more than two times larger than that of pure Fe3O4 nanoparticles. This enhanced MR is likely arising from weak spin scattering while carriers transport through the molecules. Moreover, a very large low field magnetoresistance is also observed with ~500nm ferromagnetic Fe3O4 nanoparticles coated with acetic acid molecules. Those features open a door for the development of future spin-based molecular electronics.

Tunnelling anisotropic magnetoresistance at La{sub 0.67}Sr{sub 0.33}MnO{sub 3}-graphene interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phillips, L. C., E-mail: lee.phillips@cantab.net; Yan, W.; Kar-Narayan, S.

2016-03-14

Using ferromagnetic La{sub 0.67}Sr{sub 0.33}MnO{sub 3} electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32–35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La{sub 0.67}Sr{sub 0.33}MnO{sub 3}-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

Large magnetoresistance in the type-II Weyl semimetal WP 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Aifeng; Graf, D.; Liu, Yu

In this paper, we report a magnetotransport study on type-II Weyl semimetal WP 2 single crystals. Magnetoresistance exhibits a nonsaturating H n field dependence (14 300% at 2 K and 9 T), whereas systematic violation of Kohler's rule was observed. Quantum oscillations reveal a complex multiband electronic structure. The cyclotron effective mass close to the mass of free electron m e was observed in quantum oscillations along the b axis, while a reduced effective mass of about 0.5 m e was observed in α-axis quantum oscillations, suggesting Fermi surface anisotropy. The temperature dependence of the resistivity shows a large upturnmore » that cannot be explained by the multiband magnetoresistance of conventional metals. Finally, even though the crystal structure of WP 2 is not layered as in transition-metal dichalcogenides, quantum oscillations suggest partial two-dimensional character.« less

Large magnetoresistance in the type-II Weyl semimetal WP 2

DOE PAGES

Wang, Aifeng; Graf, D.; Liu, Yu; ...

2017-09-11

In this paper, we report a magnetotransport study on type-II Weyl semimetal WP 2 single crystals. Magnetoresistance exhibits a nonsaturating H n field dependence (14 300% at 2 K and 9 T), whereas systematic violation of Kohler's rule was observed. Quantum oscillations reveal a complex multiband electronic structure. The cyclotron effective mass close to the mass of free electron m e was observed in quantum oscillations along the b axis, while a reduced effective mass of about 0.5 m e was observed in α-axis quantum oscillations, suggesting Fermi surface anisotropy. The temperature dependence of the resistivity shows a large upturnmore » that cannot be explained by the multiband magnetoresistance of conventional metals. Finally, even though the crystal structure of WP 2 is not layered as in transition-metal dichalcogenides, quantum oscillations suggest partial two-dimensional character.« less

Ultrafast carrier dynamics in the large-magnetoresistance material WTe 2

DOE PAGES

Dai, Y. M.; Bowlan, J.; Li, H.; ...

2015-10-07

In this study, ultrafast optical pump-probe spectroscopy is used to track carrier dynamics in the large-magnetoresistance material WTe 2. Our experiments reveal a fast relaxation process occurring on a subpicosecond time scale that is caused by electron-phonon thermalization, allowing us to extract the electron-phonon coupling constant. An additional slower relaxation process, occurring on a time scale of ~5–15 ps, is attributed to phonon-assisted electron-hole recombination. As the temperature decreases from 300 K, the time scale governing this process increases due to the reduction of the phonon population. However, below ~50 K, an unusual decrease of the recombination time sets in,more » most likely due to a change in the electronic structure that has been linked to the large magnetoresistance observed in this material.« less

Effect of CoFeB electrode compositions on low frequency magnetic noise in tunneling magnetoresistance sensors

NASA Astrophysics Data System (ADS)

Wisniowski, P.; Dabek, M.; Wrona, J.; Cardoso, S.; Freitas, P. P.

2017-12-01

We study the effect of CoFeB electrode compositions on frequency dependent magnetic noise in tunneling magnetoresistance sensors with variable field sensitivity. We use the relationship between the normalized 1/f noise parameter (αt) and the magnetoresistance sensitivity product (MSP) to compare the magnetic noise of sensors with Co40Fe40B20, Co60Fe20B20, and Co20Fe60B20 electrodes. We observed the lowest slope of the αt vs. MSP curve of 9.1 × 10-13 μm3 T and a 1/f noise corner as low as 300 Hz for the sensors with Co60Fe20B20 electrodes. Furthermore, all sensors at a specific value of the magnetoresistance sensitivity product showed a deviation from the linear relationship between αt and MSP. The results show that in the design of high sensitivity CoFeB-MgO-CoFeB based tunneling magnetoresistance sensors for low field detection, selection of CoFeB electrodes is important and can be used to significantly improve the low frequency field detection limit.

Homotopy-Theoretic Study & Atomic-Scale Observation of Vortex Domains in Hexagonal Manganites

PubMed Central

Li, Jun; Chiang, Fu-Kuo; Chen, Zhen; Ma, Chao; Chu, Ming-Wen; Chen, Cheng-Hsuan; Tian, Huanfang; Yang, Huaixin; Li, Jianqi

2016-01-01

Essential structural properties of the non-trivial “string-wall-bounded” topological defects in hexagonal manganites are studied through homotopy group theory and spherical aberration-corrected scanning transmission electron microscopy. The appearance of a “string-wall-bounded” configuration in RMnO3 is shown to be strongly linked with the transformation of the degeneracy space. The defect core regions (~50 Å) mainly adopt the continuous U(1) symmetry of the high-temperature phase, which is essential for the formation and proliferation of vortices. Direct visualization of vortex strings at atomic scale provides insight into the mechanisms and macro-behavior of topological defects in crystalline materials. PMID:27324701

Thermo physical Properties of Multiferroic Rare Earth Manganite GdMnO3

NASA Astrophysics Data System (ADS)

Choithrani, Renu; Gaur, N. K.

2008-04-01

We have investigated the thermophysical properties of multiferroic rare earth manganite GdMnO3 in the temperature range 15 K⩽T⩽300 K. We have applied interatomic potential to study the Specific heat (C) as a function of temperature. The calculated Specific heat values are closer to the available experimental data. At room temperature, the orthorhombic GdMnO3 phase is indicative of a strong Jahn-Teller distortion. In addition, we have reported the cohesive energy (φ), molecular force constant (f), compressibility (β), Restrahalen frequency (ν0), Debye temperature (ΘD) and Groneisen parameter (γ) at temperature 15 K⩽T⩽300 K.

Resistivity and magnetoresistivity of amorphous rare-earth alloys

NASA Astrophysics Data System (ADS)

Borchi, E.; Poli, M.; De Gennaro, S.

1982-05-01

The resistivity and magnetoresistivity of amorphous rare-earth alloys are studied starting from the general approach of Van Peski-Tinbergen and Dekker. The random axial crystal-field and the magnetic correlations between the rare-earth ions are consistently taken into account. The characteristic features of the available experimental data are explained both of the case of random ferromagnetic and antiferromagnetic order.

Effect of strontium substitution on the structural and magnetic properties of La1.8Sr0.2MMnO6 (M = Ni, Co)-layered manganites

NASA Astrophysics Data System (ADS)

Karimunnesa, Syeda; Ahmmad, Bashir; Basith, M. A.

2017-07-01

Sr-substituted perovskites, La1.8Sr0.2MMnO6 (M = Ni, Co), were synthesized using the solid-state reaction technique to present a systematic study on their morphological, structural and magnetic properties. The average grain size of the as-prepared La1.8Sr0.2NiMnO6 samples are in the range of 0.2-0.7 µm and those for La1.8Sr0.2CoMnO6 manganites are 0.1-2.8 μm, which is significantly less than that of unsubstituted La2NiMnO6 (LNMO) and La2CoMnO6 (LCMO) manganites. The XPS analysis enlightened about phase purity, binding energy and oxygen vacancy of La1.8Sr0.2MMnO6 manganites. The Sr-substituted LNMO has revealed a sharp ferromagnetic to paramagnetic phase transition at 160 ± 2 K, which is about 120 K less than that of parent LNMO. The Sr-substituted LCMO exhibited such a transition at 220 ± 2 K, which is 8 K less than that of parent LCMO. The temperature-dependent magnetization measurements suggest that the effect of Sr on the transition temperature in LNMO is more significant than that of LCMO.

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

DOE PAGES

Venkatesh, S.; Baras, A.; Lee, J. -S.; ...

2016-03-24

Here, we studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (~40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetismmore » in doped/un-doped ZnO.« less

Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures

DOE PAGES

Song, Tiancheng; Cai, Xinghan; Tu, Matisse Wei-Yuan; ...

2018-05-03

Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI 3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI 3. In conclusion, ourmore » work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI 3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.« less

Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tiancheng; Cai, Xinghan; Tu, Matisse Wei-Yuan

Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI 3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI 3. In conclusion, ourmore » work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI 3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.« less

Electrophoretic-like gating used to control metal-insulator transitions in electronically phase separated manganite wires.

PubMed

Guo, Hangwen; Noh, Joo H; Dong, Shuai; Rack, Philip D; Gai, Zheng; Xu, Xiaoshan; Dagotto, Elbio; Shen, Jian; Ward, T Zac

2013-08-14

Electronically phase separated manganite wires are found to exhibit controllable metal-insulator transitions under local electric fields. The switching characteristics are shown to be fully reversible, polarity independent, and highly resistant to thermal breakdown caused by repeated cycling. It is further demonstrated that multiple discrete resistive states can be accessed in a single wire. The results conform to a phenomenological model in which the inherent nanoscale insulating and metallic domains are rearranged through electrophoretic-like processes to open and close percolation channels.

Tensile Strain Effects on the Magneto-transport in Calcium Manganese Oxide Thin Films: Comparison with its Hole-doped Counterpart

NASA Astrophysics Data System (ADS)

Lawson, Bridget; Neubauer, Samuel; Chaudhry, Adeel; Hart, Cacie; Ferrone, Natalie; Houston, David; Yong, Grace; Kolagani, Rajeswari

Magnetoresistance properties of the epitaxial thin films of doped rare earth manganites are known to be influenced by the effect of bi-axial strain induced by lattice mismatch with the substrate. In hole-doped manganites, the effect of both compressive and tensile strain is qualitatively consistent with the expected changes in unit cell symmetry from cubic to tetragonal, leading to Jahn-Teller strain fields that affect the energy levels of Mn3 + energy levels. Recent work in our laboratory on CaMnO3 thin films has pointed out that tetragonal distortions introduced by tensile lattice mismatch strain may also have the effect of modulating the oxygen content of the films in agreement with theoretical models that propose such coupling between strain and oxygen content. Our research focuses on comparing the magneto-transport properties of hole-doped manganite LaCaMnO3 thin films with that of its electron doped counter parts, in an effort to delineate the effects of oxygen stoichiometry changes on magneto-transport from the effects of Jahn-Teller type strain. Towson University Office of Undergraduate Research, Fisher Endowment Grant and Undergraduate Research Grant from the Fisher College of Science and Mathematics, Seed Funding Grant from the School of Emerging technologies and the NSF Grant ECCS 112856.

Colossal thermomagnetic response in chiral d-wave superconductor URu2Si2

NASA Astrophysics Data System (ADS)

Matsuda, Yuji

The heavy-fermion compound URu2Si2 exhibits unconventional superconductivity at Tc = 1.45 K deep inside the so-called hidden order phase. An intriguing aspect is that this system has been suggested to be a candidate of a chiral d-wave superconductor, and possible Weyl-type topological superconducting states have been discussed recently. Here we report on the observation of a highly unusual Nernst signal due to the superconducting fluctuations above Tc. The Nernst coefficient is anomalously enhanced (by a factor of ~106) as compared with the theoretically expected value of the Gaussian fluctuations. This colossal Nernst effect intimately reflects the highly unusual superconducting state of URu2Si2. The results invoke possible chiral or Berry-phase fluctuations associated with the broken time-reversal symmetry of the superconducting order parameter. In collaboration with T. Yamashita, Y. Shimoyama, H. Sumiyoshi (Kyoto), S. Fujimoto (Osaka), T. Shibauchi (Tokyo), Y. Haga (JAEA), T. D. Matsuda (TMU) , Y. Onuki (Ryukyus), A. Levchenko (Wisconsin-Madison).

Colossal Negative Thermal Expansion in Electron-Doped PbVO3 Perovskites.

PubMed

Yamamoto, Hajime; Imai, Takashi; Sakai, Yuki; Azuma, Masaki

2018-07-02

Colossal negative thermal expansion (NTE) with a volume contraction of about 8 %, the largest value reported so far for NTE materials, was observed in an electron-doped giant tetragonal perovskite compound Pb 1-x Bi x VO 3 (x=0.2 and 0.3). A polar tetragonal (P4mm) to non-polar cubic structural transition took place upon heating. The coefficient of thermal expansion (CTE) and the working temperature could be tuned by changing the Bi content, and La substitution decreased the transition temperature to room temperature. Pb 0.76 La 0.04 Bi 0.20 VO 3 exhibited a unit cell volume contraction of 6.7 % from 200 K to 420 K. Interestingly, further gigantic NTE of about 8.5 % was observed in a dilametric measurement of a Pb 0.76 La 0.04 Bi 0.20 VO 3 polycrystalline sample. The pronounced NTE in the sintered body should be attributed to an anisotropic lattice parameter change. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO 3 hybrids

NASA Astrophysics Data System (ADS)

Shang, T.; Zhan, Q. F.; Yang, H. L.; Zuo, Z. H.; Xie, Y. L.; Zhang, Y.; Liu, L. P.; Wang, B. M.; Wu, Y. H.; Zhang, S.; Li, Run-Wei

2015-10-01

We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO3 (LCO) ferromagnetic insulator films. The LaCoO3 films were deposited on several single crystalline substrates [LaAlO3,(La,Sr)(Al,Ta)O3, and SrTiO3] with (001) orientation. The physical properties of LaCoO3 films were characterized by the measurements of magnetic and transport properties. The LaCoO3 films undergo a paramagnetic to ferromagnetic (FM) transition at Curie temperatures ranging from 40 to 85 K, below which the Pt/LCO hybrids exhibit significant extraordinary Hall resistance up to 50 m Ω and unconventional magnetoresistance ratio Δ ρ /ρ0 about 1.2 ×10-4 , accompanied by the conventional magnetoresistance. The observed spin transport properties share some common features as well as some unique characteristics when compared with well-studied Y3Fe5O12 -based Pt thin films. Our findings call for new theories since the extraordinary Hall resistance and magnetoresistance cannot be consistently explained by the existing theories.

Heat capacity and magnetocaloric effect in manganites (La 1- yEu y) 0.7Pb 0.3MnO 3 ( y:0.2; 0.6)

NASA Astrophysics Data System (ADS)

Kartashev, A. V.; Flerov, I. N.; Volkov, N. V.; Sablina, K. A.

2010-03-01

Heat capacity and intensive magnetocaloric effect (MCE) in manganites (La 1- yEu y) 0.7Pb 0.3MnO 3 [ y=0.2; 0.6] (LEPM) were investigated by means of adiabatic calorimeter. The heat capacity anomaly as well as the values of both the intensive (Δ TAD) and the extensive (Δ SMCE) MCE were found to decrease upon increased replacement of La with nonmagnetic Eu. However, because of widening of the MCE peaks, the LEPM compounds show the relative cooling power, RCP/Δ H, comparable to other solid solutions of manganites. Owing to strong effect of Eu→La substitution on the Curie temperature, LEPM might have potential as the solid state refrigerants in multi-element cooling apparatus operating in a wide temperature range.

Interplanar coupling-dependent magnetoresistivity in high-purity layered metals

DOE PAGES

Kikugawa, N.; Goswami, P.; Kiswandhi, A.; ...

2016-03-29

The magnetic field-induced changes in the conductivity of metals are the subject of intense interest, both for revealing new phenomena and as a valuable tool for determining their Fermi surface. Here we report a hitherto unobserved magnetoresistive effect in ultra-clean layered metals, namely a negative longitudinal magnetoresistance that is capable of overcoming their very pronounced orbital one. This effect is correlated with the interlayer coupling disappearing for fields applied along the so-called Yamaji angles where the interlayer coupling vanishes. Therefore, it is intrinsically associated with the Fermi points in the field-induced quasi-one-dimensional electronic dispersion, implying that it results from themore » axial anomaly among these Fermi points. In its original formulation, the anomaly is predicted to violate separate number conservation laws for left- and right-handed chiral (for example, Weyl) fermions. Furthermore, its observation in PdCoO 2, PtCoO 2 and Sr 2RuO 4 suggests that the anomaly affects the transport of clean conductors, in particular near the quantum limit.« less

Magnetization and Magnetoresistance in Iron Intercalated Transition Metal Dichalcogenides

NASA Astrophysics Data System (ADS)

Choe, Jesse

The understanding of magnetism in strongly correlated electronic systems is a vital area of research. Not only is it linked to other phenomena like high temperature superconductivity in the cuprates and iron pnictides, but magnetic materials have been used in electronics since before the computer. As it becomes harder to prop up Moore's law by increasing the density of transistors, mankind must look towards new methods to improve technology or risk stagnation. Research into alternative materials for technology, such as transition metal dichalcogenides, is a promising direction of research to maintain the rate of technological improvement. Our work focuses on the effect of iron intercalation in TiS2. Single crystals of FexTiS 2 (0 ≤ x ≤ 1) were grown using vapor transport. Anisotropic susceptibility and magnetization measurements of the samples were measured, showing ferromagnetism and sharp switching behavior in the magnetization. Finally electrical transport measurements were taken, both with and without field. Measurements of magnetoresistance for x = 0.2 and 0.3 show large magnetoresistance (up to ˜ 60%) and an atypical 'bowtie' shape.

Colossal dielectric constant and relaxation behaviors in Pr:SrTiO{sub 3} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu Cheng; Liu Peng; Zhou Jianping

2010-05-15

Sr{sub 1-x}Pr{sub x}TiO{sub 3} ceramics (0.00{<=}x{<=}0.03) were prepared by a traditional solid-state reaction method. Two relaxation processes (marked as A and B) of the Sr{sub 0.09}Pr{sub 0.01}TiO{sub 3} ceramics were investigated by analyzing the E{sub a} values obtained from the Arrhenius law. Colossal dielectric constant (CDC) was first obtained in Sr{sub 0.09}Pr{sub 0.01}TiO{sub 3} ceramics, whose permittivity was up to 3000 (1 kHz, room temperature), greater than that of pure SrTiO{sub 3} ceramics and samples with more Pr addition (x=0.02 and 0.03). This CDC behavior was related to the internal barrier layer capacitance mechanism.

Interface reconstruction with emerging charge ordering in hexagonal manganite

PubMed Central

Xu, Changsong; Han, Myung-Geun; Bao, Shanyong; Nan, Cewen; Bellaiche, Laurent

2018-01-01

Multiferroic materials, which simultaneously have multiple orderings, hold promise for use in the next generation of memory devices. We report a novel self-assembled MnO double layer forming at the interface between a multiferroic YMnO3 film and a c-Al2O3 substrate. The crystal structures and the valence states of this MnO double layer were studied by atomically resolved scanning transmission electron microscopy and spectroscopy, as well as density functional theory (DFT) calculations. A new type of charge ordering has been identified within this MnO layer, which also contributes to a polarization along the [001] direction. DFT calculations further establish the occurrence of multiple couplings between charge and lattice in this novel double layer, in addition to the polarization in nearby YMnO3 single layer. The interface reconstruction reported here creates a new playground for emergent physics, such as giant ferroelectricity and strong magnetoelectric coupling, in manganite systems. PMID:29795782

Negative tunnel magnetoresistance and differential conductance in transport through double quantum dots

NASA Astrophysics Data System (ADS)

Trocha, Piotr; Weymann, Ireneusz; Barnaś, Józef

2009-10-01

Spin-dependent transport through two coupled single-level quantum dots weakly connected to ferromagnetic leads with collinear magnetizations is considered theoretically. Transport characteristics, including the current, linear and nonlinear conductances, and tunnel magnetoresistance are calculated using the real-time diagrammatic technique in the parallel, serial, and intermediate geometries. The effects due to virtual tunneling processes between the two dots via the leads, associated with off-diagonal coupling matrix elements, are also considered. Negative differential conductance and negative tunnel magnetoresistance have been found in the case of serial and intermediate geometries, while no such behavior has been observed for double quantum dots coupled in parallel. It is also shown that transport characteristics strongly depend on the magnitude of the off-diagonal coupling matrix elements.

The effect of external magnetic field on the Raman peaks in manganites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahu, A. K., E-mail: ajitsahu@seemantaengg.ac.in; Rout, G. C.

2014-04-24

We report here a microscopic theoretical model study exhibiting the effect of external magnetic field on the Raman excitation peaks in the CMR manganite system. The Hamiltonian consists of Jahn-Teller (J-T) distortion in e{sub g} band, the double exchange interaction and the Heisenberg spin-spin interaction. Further the phonons are coupled to e{sub g} band electrons, J-T distorted e{sub g} band and the double exchange interaction. The Raman spectral intensity is calculated from the imaginary part of the phonon Green function. The spectra exhibits three peaks besides a very weak high energy peak. The magnetic field effect on these peaks aremore » reported.« less

Giant Magnetoresistance: Basic Concepts, Microstructure, Magnetic Interactions and Applications

PubMed Central

Ennen, Inga; Kappe, Daniel; Rempel, Thomas; Glenske, Claudia; Hütten, Andreas

2016-01-01

The giant magnetoresistance (GMR) effect is a very basic phenomenon that occurs in magnetic materials ranging from nanoparticles over multilayered thin films to permanent magnets. In this contribution, we first focus on the links between effect characteristic and underlying microstructure. Thereafter, we discuss design criteria for GMR-sensor applications covering automotive, biosensors as well as nanoparticular sensors. PMID:27322277

Magnetic and lattice contributions to the magnetocaloric effect in Sm1-xSrxMnO3 manganites

NASA Astrophysics Data System (ADS)

Aliev, A. M.; Batdalov, A. B.; Khanov, L. N.

2018-04-01

A method is proposed to estimate the lattice and magnetic contributions to the total magnetocaloric effect (MCE) in materials with magnetostructural phase transitions. The method is based on two assumptions: (a) the lattice contribution is proportional to magnetostriction and (b) the magnetic contribution obeys a field dependence ΔTm ˜ Hn. Temperature and magnetic field dependences of the MCE and magnetostriction are used to estimate the contributions. Estimations of the contributions in Sm0.6Sr0.4MnO3 manganite are made for cases when n = 0.66 and n = 0.75. Analysis shows that in the area of the maximum of the effect for n = 0.66, the magnetic subsystem contributes about 58% of the total MCE, and the remaining 42% are due to a change in the entropy of the lattice. In the case of n = 0.75, the magnetic contribution remains predominant, but the ratio of the contributions changes: the magnetic contribution counts for 53% and the lattice contribution equals to 47%. The ratio of contributions varies with the temperature and magnetic field. The results of estimation agree with direct measurements of the MCE in Sm0.5Sr0.5MnO3 manganite, where almost the total effect is due to a change in the magnetic entropy.

Nonintrinsic origin of the colossal dielectric constants in Ca Cu3 Ti4 O12

NASA Astrophysics Data System (ADS)

Lunkenheimer, P.; Fichtl, R.; Ebbinghaus, S. G.; Loidl, A.

2004-11-01

The dielectric properties of CaCu3Ti4O12 , a material showing colossal values of the dielectric constant, were investigated over a broad temperature and frequency range extending up to 1.3GHz . A detailed equivalent-circuit analysis of the results and two crucial experiments, employing different types of contacts and varying the sample thickness were performed. The results provide clear evidence that the apparently high values of the dielectric constant in CaCu3Ti4O12 are nonintrinsic and due to electrode polarization effects. The intrinsic properties of CaCu3Ti4O12 are characterized by charge transport via hopping of localized charge carriers and a relatively high dielectric constant of the order of 100.

Tuning the Curie temperature of epitaxial Nd0.6Sr0.4MnO3 thin films

NASA Astrophysics Data System (ADS)

Bhat, Shwetha G.; Kumar, P. S. Anil

2018-02-01

NdxSr1-xMnO3 (0.2 ≤ x ≤ 0.5) systems are widely studied in magnetism, popular for high colossal magnetoresistance and are ferromagnetic oxides with TC ranging from 200 K to 300 K. Recently, many of such compounds are re-visited for exploring the correlation of spin, charge and lattice degrees of freedom. Although, manganite thin films are the ideal candidates for studying the electron-correlation effects, the puzzle of obtaining a high quality epitaxial thin films of NdxSr1-xMnO3 are still unsolved contrary to its sister compound LaxSr1-xMnO3. Hence, in this study, we demonstrate the growth of best quality of Nd0.6Sr0.4MnO3 (NSMO) epitaxial thin films. This is evident from the TC and a sharp insulator-to-metal transition (IMT) coinciding at as high as ∼255 K against the bulk TC (∼270 K). It is the highest reported TC in Nd0.6Sr0.4MnO3 thin films to date. Moreover, as-deposited films with in situ oxygen annealing are not enough to relax the lattice of NSMO films due to the significant Jahn-Teller distortion in the film. With ex situ annealing processes alongside the various deposition and in situ annealing conditions, we have extensively studied the growth of epitaxial NSMO thin films on LaAlO3 (0 0 1) and SrTiO3 (0 0 1) to investigate the evolution of lattice and its one-to-one correspondence with the magnetism and the electrical properties of thin films. Accordingly, the enhanced magnetization, reduced resistivity and the higher TC and IMT of the NSMO films obtained from our extensive growth analysis looks promising for the future applications across the TC and IMT.

Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi{sub 2}Te{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dey, Rik, E-mail: rikdey@utexas.edu; Pramanik, Tanmoy; Roy, Anupam

We have studied angle dependent magnetoresistance of Bi{sub 2}Te{sub 3} thin film with field up to 9 T over 2–20 K temperatures. The perpendicular field magnetoresistance has been explained by the Hikami-Larkin-Nagaoka theory alone in a system with strong spin-orbit coupling, from which we have estimated the mean free path, the phase coherence length, and the spin-orbit relaxation time. We have obtained the out-of-plane spin-orbit relaxation time to be small and the in-plane spin-orbit relaxation time to be comparable to the momentum relaxation time. The estimation of these charge and spin transport parameters are useful for spintronics applications. For parallel field magnetoresistance,more » we have confirmed the presence of Zeeman effect which is otherwise suppressed in perpendicular field magnetoresistance due to strong spin-orbit coupling. The parallel field data have been explained using both the contributions from the Maekawa-Fukuyama localization theory for non-interacting electrons and Lee-Ramakrishnan theory of electron-electron interactions. The estimated Zeeman g-factor and the strength of Coulomb screening parameter agree well with the theory. Finally, the anisotropy in magnetoresistance with respect to angle has been described by the Hikami-Larkin-Nagaoka theory. This anisotropy can be used in anisotropic magnetic sensor applications.« less

Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

DOEpatents

Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

2011-08-23

A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

Antiferromagnetic exchange and magnetoresistance enhancement in ultrathin Co-Re sandwiches

NASA Astrophysics Data System (ADS)

Freitas, P. P.; Melo, L. V.; Trindade, I.; From, M.

1992-10-01

Co-Re ultrathin sandwiches were prepared that show antiferromagnetic coupling and enhanced saturation magnetoresistance for Re spacer thicknesses below 9 Å. A field of 2.5 kOe is needed to saturate the antiferromagnetically coupled Co layers. These results are similar to those found in Co-Re superlattices.

Effect of annealing on magnetoresistance and microstructure of multilayered CoFe/Cu systems with different buffer layer

NASA Astrophysics Data System (ADS)

Bannikova, N. S.; Milyaev, M. A.; Naumova, L. I.; Proglyado, V. V.; Krinitsina, T. P.; Chernyshova, T. A.; Ustinov, V. V.

2015-02-01

The effects of annealing on the structure, magnetic hysteresis, and magnetoresistance of [Co90Fe10(15 Å)/Cu(23 Å)] n superlattices with Cr and Co90Fe10 buffer layers of different thicknesses have been studied. The optimum temperature and time of annealing that increase the magnetoresistance were shown to depend on the buffer layer thickness. The coefficients of effective interlayer diffusion due to the annealing have been determined.

Large linear magnetoresistance in a new Dirac material BaMnBi2

NASA Astrophysics Data System (ADS)

Wang, Yi-Yan; Yu, Qiao-He; Xia, Tian-Long

2016-10-01

Dirac semimetal is a class of materials that host Dirac fermions as emergent quasi-particles. Dirac cone-type band structure can bring interesting properties such as quantum linear magnetoresistance and large mobility in the materials. In this paper, we report the synthesis of high quality single crystals of BaMnBi2 and investigate the transport properties of the samples. BaMnBi2 is a metal with an antiferromagnetic transition at T N = 288 K. The temperature dependence of magnetization displays different behavior from CaMnBi2 and SrMnBi2, which suggests the possible different magnetic structure of BaMnBi2. The Hall data reveals electron-type carriers and a mobility μ(5 K) = 1500 cm2/V·s. Angle-dependent magnetoresistance reveals the quasi-two-dimensional (2D) Fermi surface in BaMnBi2. A crossover from semiclassical MR ˜ H 2 dependence in low field to MR ˜ H dependence in high field, which is attributed to the quantum limit of Dirac fermions, has been observed in magnetoresistance. Our results indicate the existence of Dirac fermions in BaMnBi2. Project supported by the National Natural Science Foundation of China (Grant No. 11574391), the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China (Grant No. 14XNLQ07).

Variable-range-hopping magnetoresistance

NASA Astrophysics Data System (ADS)

Azbel, Mark Ya

1991-03-01

The hopping magnetoresistance R of a two-dimensional insulator with metallic impurities is considered. In sufficiently weak magnetic fields it increases or decreases depending on the impurity density n: It decreases if n is low and increases if n is high. In high magnetic fields B, it always exponentially increases with √B . Such fields yield a one-dimensional temperature dependence: lnR~1/ √T . The calculation provides an accurate leading approximation for small impurities with one eigenstate in their potential well. In the limit of infinitesimally small impurities, an impurity potential is described by a generalized function. This function, similar to a δ function, is localized at a point, but, contrary to a δ function in the dimensionality above 1, it has finite eigenenergies. Such functions may be helpful in the study of scattering and localization of any waves.

Peculiar behavior of magnetoresistance in HgSe single crystal with low electron concentration

NASA Astrophysics Data System (ADS)

Lonchakov, A. T.; Bobin, S. B.; Deryushkin, V. V.; Okulov, V. I.; Govorkova, T. E.; Neverov, V. N.

2018-02-01

Magnetoresistive properties of the single crystal of HgSe with a low electron concentration were studied in a wide range of temperatures and magnetic fields. Some fundamental parameters of the spectrum and scattering of electrons were experimentally determined. Two important features of magnetic transport were found—strong transverse magnetoresistance (MR) and negative longitudinal MR, which can indicate the existence of the topological phase of the Weyl semimetal (WSM) in HgSe. Taking this hypothesis into account, we suggest a modified band diagram of mercury selenide at low electron energies. The obtained results are essential for the deeper understanding of both physics of gapless semiconductors and WSMs—promising materials for various applications in electronics, spintronics, computer, and laser technologies.

A CMOS Front-End With Integrated Magnetoresistive Sensors for Biomolecular Recognition Detection Applications.

PubMed

Costa, Tiago; Cardoso, Filipe A; Germano, Jose; Freitas, Paulo P; Piedade, Moises S

2017-10-01

The development of giant magnetoresistive (GMR) sensors has demonstrated significant advantages in nanomedicine, particularly for ultrasensitive point-of-care diagnostics. To this end, the detection system is required to be compact, portable, and low power consuming at the same time that a maximum signal to noise ratio is maintained. This paper reports a CMOS front-end with integrated magnetoresistive sensors for biomolecular recognition detection applications. Based on the characterization of the GMR sensor's signal and noise, CMOS building blocks (i.e., current source, multiplexers, and preamplifier) were designed targeting a negligible noise when compared with the GMR sensor's noise and a low power consumption. The CMOS front-end was fabricated using AMS [Formula: see text] technology and the magnetoresistive sensors were post-fabricated on top of the CMOS chip with high yield ( [Formula: see text]). Due to its low circuit noise (16 [Formula: see text]) and overall equivalent magnetic noise ([Formula: see text]), the full system was able to detect 250 nm magnetic nanoparticles with a circuit imposed signal-to-noise ratio degradation of only -1.4 dB. Furthermore, the low power consumption (6.5 mW) and small dimensions ([Formula: see text] ) of the presented solution guarantees the portability of the detection system allowing its usage at the point-of-care.

Crystalline Structure, Defect Chemistry and Room Temperature Colossal Permittivity of Nd-doped Barium Titanate

NASA Astrophysics Data System (ADS)

Sun, Qiaomei; Gu, Qilin; Zhu, Kongjun; Jin, Rongying; Liu, Jinsong; Wang, Jing; Qiu, Jinhao

2017-02-01

Dielectric materials with high permittivity are strongly demanded for various technological applications. While polarization inherently exists in ferroelectric barium titanate (BaTiO3), its high permittivity can only be achieved by chemical and/or structural modification. Here, we report the room-temperature colossal permittivity (~760,000) obtained in xNd: BaTiO3 (x = 0.5 mol%) ceramics derived from the counterpart nanoparticles followed by conventional pressureless sintering process. Through the systematic analysis of chemical composition, crystalline structure and defect chemistry, the substitution mechanism involving the occupation of Nd3+ in Ba2+ -site associated with the generation of Ba vacancies and oxygen vacancies for charge compensation has been firstly demonstrated. The present study serves as a precedent and fundamental step toward further improvement of the permittivity of BaTiO3-based ceramics.

Crystalline Structure, Defect Chemistry and Room Temperature Colossal Permittivity of Nd-doped Barium Titanate.

PubMed

Sun, Qiaomei; Gu, Qilin; Zhu, Kongjun; Jin, Rongying; Liu, Jinsong; Wang, Jing; Qiu, Jinhao

2017-02-13

Dielectric materials with high permittivity are strongly demanded for various technological applications. While polarization inherently exists in ferroelectric barium titanate (BaTiO 3 ), its high permittivity can only be achieved by chemical and/or structural modification. Here, we report the room-temperature colossal permittivity (~760,000) obtained in xNd: BaTiO 3 (x = 0.5 mol%) ceramics derived from the counterpart nanoparticles followed by conventional pressureless sintering process. Through the systematic analysis of chemical composition, crystalline structure and defect chemistry, the substitution mechanism involving the occupation of Nd 3+ in Ba 2+ -site associated with the generation of Ba vacancies and oxygen vacancies for charge compensation has been firstly demonstrated. The present study serves as a precedent and fundamental step toward further improvement of the permittivity of BaTiO 3 -based ceramics.

Crystalline Structure, Defect Chemistry and Room Temperature Colossal Permittivity of Nd-doped Barium Titanate

PubMed Central

Sun, Qiaomei; Gu, Qilin; Zhu, Kongjun; Jin, Rongying; Liu, Jinsong; Wang, Jing; Qiu, Jinhao

2017-01-01

Dielectric materials with high permittivity are strongly demanded for various technological applications. While polarization inherently exists in ferroelectric barium titanate (BaTiO3), its high permittivity can only be achieved by chemical and/or structural modification. Here, we report the room-temperature colossal permittivity (~760,000) obtained in xNd: BaTiO3 (x = 0.5 mol%) ceramics derived from the counterpart nanoparticles followed by conventional pressureless sintering process. Through the systematic analysis of chemical composition, crystalline structure and defect chemistry, the substitution mechanism involving the occupation of Nd3+ in Ba2+ -site associated with the generation of Ba vacancies and oxygen vacancies for charge compensation has been firstly demonstrated. The present study serves as a precedent and fundamental step toward further improvement of the permittivity of BaTiO3-based ceramics. PMID:28205559

Magnetization and magnetoresistance of common alloy wires used in cryogenic instrumentation.

PubMed

Abrecht, M; Adare, A; Ekin, J W

2007-04-01

We present magnetization and magnetoresistance data at liquid-helium and liquid-nitrogen temperatures for wire materials commonly used for instrumentation wiring of specimens, sensors, and heaters in cryogenic probes. The magnetic susceptibilities in Systeme International units at 4.2 K were found to be: Manganin 1.25x10(-2), Nichrome 5.6x10(-3), and phosphor bronze -3.3x10(-5), indicating that phosphor bronze is the most suitable for high-field applications. We also show the ferromagnetic hysteresis loop of Constantan wire at liquid-helium temperature. The magnetoresistance of these four wires was relatively small: the changes in resistance at 4 K due to a 10 T transverse magnetic field are -2.56% for Constantan, -2.83% for Manganin, +0.69% for Nichrome, and +4.5% for phosphor bronze, compared to about +188% for a typical copper wire under the same conditions.

Magnetization and magnetoresistance of common alloy wires used in cryogenic instrumentation

NASA Astrophysics Data System (ADS)

Abrecht, M.; Adare, A.; Ekin, J. W.

2007-04-01

We present magnetization and magnetoresistance data at liquid-helium and liquid-nitrogen temperatures for wire materials commonly used for instrumentation wiring of specimens, sensors, and heaters in cryogenic probes. The magnetic susceptibilities in Systeme International units at 4.2 K were found to be: Manganin 1.25×10-2, Nichrome 5.6×10-3, and phosphor bronze -3.3×10-5, indicating that phosphor bronze is the most suitable for high-field applications. We also show the ferromagnetic hysteresis loop of Constantan wire at liquid-helium temperature. The magnetoresistance of these four wires was relatively small: the changes in resistance at 4 K due to a 10 T transverse magnetic field are -2.56% for Constantan, -2.83% for Manganin, +0.69% for Nichrome, and +4.5% for phosphor bronze, compared to about +188% for a typical copper wire under the same conditions.

A wideband magnetoresistive sensor for monitoring dynamic fault slip in laboratory fault friction experiments

USGS Publications Warehouse

Kilgore, Brian D.

2017-01-01

A non-contact, wideband method of sensing dynamic fault slip in laboratory geophysical experiments employs an inexpensive magnetoresistive sensor, a small neodymium rare earth magnet, and user built application-specific wideband signal conditioning. The magnetoresistive sensor generates a voltage proportional to the changing angles of magnetic flux lines, generated by differential motion or rotation of the near-by magnet, through the sensor. The performance of an array of these sensors compares favorably to other conventional position sensing methods employed at multiple locations along a 2 m long × 0.4 m deep laboratory strike-slip fault. For these magnetoresistive sensors, the lack of resonance signals commonly encountered with cantilever-type position sensor mounting, the wide band response (DC to ≈ 100 kHz) that exceeds the capabilities of many traditional position sensors, and the small space required on the sample, make them attractive options for capturing high speed fault slip measurements in these laboratory experiments. An unanticipated observation of this study is the apparent sensitivity of this sensor to high frequency electomagnetic signals associated with fault rupture and (or) rupture propagation, which may offer new insights into the physics of earthquake faulting.

Giant magnetoresistance due to magnetoelectric currents in Sr{sub 3}Co{sub 2}Fe{sub 24}O{sub 41} hexaferrites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xian; School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074; Su, Zhijuan

2014-09-15

The giant magnetoresistance and magnetoelectric (ME) effects of Z-type hexaferrite Sr{sub 3}Co{sub 2}Fe{sub 24}O{sub 41} were investigated. The present experiments indicated that an induced magnetoelectric current in a transverse conical spin structure not only presented a nonlinear behavior with magnetic field and electric field but also depended upon a sweep rate of the applied magnetic field. More interestingly, the ME current induced magnetoresistance was measured, yielding a giant room temperature magnetoresistance of 32.2% measured at low magnetic fields (∼125 Oe). These results reveal great potential for emerging applications of multifunctional magnetoelectric ferrite materials.

Electronic conduction in doped multiferroic BiFeO3

NASA Astrophysics Data System (ADS)

Yang, Chan-Ho; Seidel, Jan; Kim, Sang-Yong; Gajek, M.; Yu, P.; Holcomb, M. B.; Martin, L. W.; Ramesh, R.; Chu, Y. H.

2009-03-01

Competition between multiple ground states, that are energetically similar, plays a key role in many interesting material properties and physical phenomena as for example in high-Tc superconductors (electron kinetic energy vs. electron-electron repulsion), colossal magnetoresistance (metallic state vs. charge ordered insulating state), and magnetically frustrated systems (spin-spin interactions). We are exploring the idea of similar competing phenomena in doped multiferroics by control of band-filling. In this paper we present systematic investigations of divalent Ca doping of ferroelectric BiFeO3 in terms of structural and electronic conduction properties as well as diffusion properties of oxygen vacancies.

Structural, magnetic, and magnetocaloric properties of bilayer manganite La1.38Sr1.62Mn2O7

NASA Astrophysics Data System (ADS)

Yang, Yu-E.; Xie, Yunfei; Xu, Lisha; Hu, Dazhi; Ma, Chunlan; Ling, Langsheng; Tong, Wei; Pi, Li; Zhang, Yuheng; Fan, Jiyu

2018-04-01

In this study, we investigated the structural, magnetic phase transition, and magnetocaloric properties of bilayer perovskite manganite La1.38Sr1.62Mn2O7 based on X-ray diffraction, electron paramagnetic resonance, and temperature-/magnetic field-dependent magnetization measurements. The structural characterization results showed the prepared sample had a tetragonal structure with the space group I4/mmm. The Curie temperature was determined as 114 K in the magnetization studies and a second-order paramagnetic-ferromagnetic transition was confirmed by the Arrott plot, which showed that the slopes were positive for all the curves. According to the variation in the electron paramagnetic resonance spectrum, we detected obvious electronic phase separation across a broad temperature range from 220 to 80 K in this magnetic material, thereby indicating that the paramagnetic and ferromagnetic phases coexist above as well as below the Curie temperature. Based on a plot of the isothermal magnetization versus the magnetic applied field, we deduced the maximum magnetic entropy change, which only reached 1.89 J/kg.K under an applied magnetic field of 7.0 T. These theoretical investigations indicated that in addition to the magnetoelastic couplings and electron interaction, electronic phase separation and anisotropic exchange interactions also affect the magnetic entropy changes in this bilayer manganite.

Giant Tunnel Magnetoresistance with a Single Magnetic Phase-Transition Electrode

NASA Astrophysics Data System (ADS)

Zhang, Jia; Chen, X. Z.; Song, C.; Feng, J. F.; Wei, H. X.; Lü, Jing-Tao

2018-04-01

The magnetic phase-transition tunnel-magnetoresistance (MPT-TMR) effect with a single magnetic electrode is investigated by first-principles calculations. The calculations show that the MPT-TMR of an α'-FeRh /MgO /Cu tunnel junction can be as high as hundreds of percent when the magnetic structure of α'-FeRh changes from G -type antiferromagnetic (G -AFM ) to ferromagnetic order. This type of MPT-TMR may be superior to the tunnel anisotropic magnetoresistance because of its huge magnetoresistance effect and similar structural simplicity. The main mechanism for the giant MPT-TMR can be attributed to the formation of interface resonant states at the G -AFM FeRh /MgO interface. A direct FeRh /MgO interface is found to be necessary for achieving a high MPT-TMR experimentally. Moreover, we find the α'-FeRh /MgO interface with FeRh in the ferromagnetic phase has nearly full spin polarization due to the negligible majority transmission and significantly different Fermi surface of two spin channels. Thus, it may act as a highly efficient and tunable spin injector. In addition, the electric-field-driven MPT of FeRh-based heteromagnetic nanostructures can be utilized to design various energy-efficient tunnel-junction structures and the corresponding lower-power-consumption devices. We also discuss the consequence of various junction defects on MPT-TMR. The interface oxygen layer is found to be detrimental to MPT-TMR. The sign of MPT-TMR is reversed with Rh termination due to the lack of contribution from the interface resonance states. However, the MPT-TMR may be robust against the oxygen vacancy inside of MgO and the shift of the Fermi energy. Our results will stimulate further experimental investigations of MPT-TMR and other fascinating phenomenon of FeRh-based tunnel junctions that may be promising in antiferromagnetic spintronics.

Chemical Pressure Effects in Layered Manganites

NASA Astrophysics Data System (ADS)

Moritomo, Yutaka; Maruyama, Yousuke; Nakamura, Arao

1998-03-01

Lattice effects on the magnetic and transport properties have been investigated for layered-type doped mangaites. The insulator-to-metal transition temperature for La_1.2Sr_1.8Mn_2O7 (T_C=130 K) is significantly suppressed with chemical substitution of the trivalent La^3+ ions to smaller Nd^3+ (or Sm^3+) ions(Y. Moritomo et al), Phys. Rev. B56(1997)R7057. Similarly, the charge-ordering temperature for La_0.5Sr_1.5MnO4 (T_CO=230 K) is suppresses with chemical substitution(Y. Moritomo et al), Phys. Rev. B56, in press. Systematic x-ray as well as neutron diffraction measurements have revealed that above chemical pressure enhances the static Jahn-Teller distortion of the MnO6 octahedra in both the system. We will explain the suppressions of TC and T_CO in terms of the increasing d_3z^2-r^2 character in the occupied eg state. Our observation indicates that the chemical pressure effects are qualitatively different between the cubic and layered manganites systems. The authors are grateful to K. Ohoyama and M. Ohashi for their help in neutron diffraction measurements, and to S. Mori for his help in electron diffraction measurements. This work was supported by a Grant-In-Aid for Scientific Research from the Ministry of Education, Science, Sport and Culture and from PRESTO, Japan Scienece and Technology Corporation (JST), Japan.

Rapid detection of Escherichia coli O157:H7 using tunneling magnetoresistance biosensor

NASA Astrophysics Data System (ADS)

Wu, Yuanzhao; Liu, Yiwei; Zhan, Qingfeng; Liu, J. Ping; Li, Run-Wei

2017-05-01

A rapid method for the sensitive detection of bacteria using magnetic immunoassay, which are measured with a tunneling magnetoresistance (TMR) sensor, is described. For the measurement of Escherichia coli O157:H7 (E. coli O157:H7) bacteria, the target was labeled by magnetic beads through magnetic immunoassay. The magnetic beads produce a weak magnetic fringe field when external field is applied, thus induce the magnetoresistance change of TMR sensor. A detection limit of 100 CFU/mL E. coli O157:H7 bacteria in 5 hours was obtained. With its high sensitive and rapid detection scheme based on the TMR biosensor, the detection system is an excellent candidate suitable and promising for food safety and biomedical detection.

Flux concentration and modulation based magnetoresistive sensor with integrated planar compensation coils

NASA Astrophysics Data System (ADS)

Tian, Wugang; Hu, Jiafei; Pan, Mengchun; Chen, Dixiang; Zhao, Jianqiang

2013-03-01

1/f noise is one of the main noise sources of magnetoresistive (MR) sensors, which can cause intrinsic detection limit at low frequency. To suppress this noise, the solution of flux concentration and vertical motion modulation (VMM) has been proposed. Magnetic hysteresis in MR sensors is another problem, which degrades their response linearity and detection ability. To reduce this impact, the method of pulse magnetization and magnetic compensation field with integrated planar coils has been introduced. A flux concentration and VMM based magnetoresistive prototype sensor with integrated planar coils was fabricated using microelectromechanical-system technology. The response linearity of the prototype sensors is improved from 0.8% to 0.12%. The noise level is reduced near to the thermal noise level, and the low-frequency detection ability of the prototype sensor is enhanced with a factor of more than 80.

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

NASA Astrophysics Data System (ADS)

Althammer, Matthias; Mishra, Rohan; Borisevich, Albina J.; Singh, Amit Vikam; Keshavarz, Sahar; Yurtisigi, Mehmet Kenan; Leclair, Patrick; Gupta, Arunava

We experimentally investigate the structural, magnetic and electrical transport properties of La0.67Sr0.33MnO3 based magnetic tunnel junctions with a SrSnO3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier the observed tunnel magnetoresistance is comparable to tunnel junctions with a better lattice matched SrTiO3 barrier, reaching values of up to 350 % at T = 5 K . Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. Our results suggest that by reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future. We gratefully acknowledge financial support via NSF-ECCS Grant No. 1509875.

Negative magnetoresistance of ultra-narrow superconducting nanowires in the resistive state

NASA Astrophysics Data System (ADS)

Arutyunov, K. Yu.

2008-02-01

We present a phenomenological model that qualitatively explains negative magnetoresistance in quasi-one-dimensional superconducting channels in the resistive state. The model is based on the assumption that fluctuations of the order parameter (phase slips) are responsible for the finite effective resistance of a narrow superconducting wire sufficiently close to the critical temperature. Each fluctuation is accompanied by an instantaneous formation of a quasi-normal region, of the order of the non-equilibrium quasiparticle relaxation length, ‘pinned’ to the core of the phase slip. The effective time-averaged voltage measured in experiments is a sum of two terms. The first is the conventional contribution associated with the rate of the fluctuations via the Josephson relation. The second term is the Ohmic contribution of this quasi-normal region. Depending on the material properties of the wire, there might be a range of magnetic fields where the first term is not significantly affected, while the second term is effectively suppressed, contributing to the experimentally observed negative magnetoresistance.

Fluorescent magnetic nanoparticles for cell labeling: flux synthesis of manganite particles and novel functionalization of silica shell.

PubMed

Kačenka, Michal; Kaman, Ondřej; Kikerlová, Soňa; Pavlů, Barbora; Jirák, Zdeněk; Jirák, Daniel; Herynek, Vít; Černý, Jan; Chaput, Frédéric; Laurent, Sophie; Lukeš, Ivan

2015-06-01

Novel synthetic approaches for the development of multimodal imaging agents with high chemical stability are demonstrated. The magnetic cores are based on La0.63Sr0.37MnO3 manganite prepared as individual grains using a flux method followed by additional thermal treatment in a protective silica shell allowing to enhance their magnetic properties. The cores are then isolated and covered de novo with a hybrid silica layer formed through the hydrolysis and polycondensation of tetraethoxysilane and a fluorescent silane synthesized from rhodamine, piperazine spacer, and 3-iodopropyltrimethoxysilane. The aminoalkyltrialkoxysilanes are strictly avoided and the resulting particles are hydrolytically stable and do not release dye. The high colloidal stability of the material and the long durability of the fluorescence are reinforced by an additional silica layer on the surface of the particles. Structural and magnetic studies of the products using XRD, TEM, and SQUID magnetometry confirm the importance of the thermal treatment and demonstrate that no mechanical treatment is required for the flux-synthesized manganite. Detailed cell viability tests show negligible or very low toxicity at concentrations at which excellent labeling is achieved. Predominant localization of nanoparticles in lysosomes is confirmed by immunofluorescence staining. Relaxometric and biological studies suggest that the functionalized nanoparticles are suitable for imaging applications. Copyright © 2015 Elsevier Inc. All rights reserved.

Direct view at colossal permittivity in donor-acceptor (Nb, In) co-doped rutile TiO2

NASA Astrophysics Data System (ADS)

Mandal, Suman; Pal, Somnath; Kundu, Asish K.; Menon, Krishnakumar S. R.; Hazarika, Abhijit; Rioult, Maxime; Belkhou, Rachid

2016-08-01

Topical observations of colossal permittivity (CP) with low dielectric loss in donor-acceptor cations co-doped rutile TiO2 have opened up several possibilities in microelectronics and energy-storage devices. Yet, the precise origin of the CP behavior, knowledge of which is essential to empower the device integration suitably, is highly disputed in the literature. From spectromicroscopic approach besides dielectric measurements, we explore that microscopic electronic inhomogeneities along with the nano-scale phase boundaries and the low temperature polaronic relaxation are mostly responsible for such a dielectric behavior, rather than electron-pinned defect-dipoles/grain-boundary effects as usually proposed. Donor-acceptor co-doping results in a controlled carrier-hopping inevitably influencing the dielectric loss while invariably upholding the CP value.

Unusual negative magnetoresistance in Bi2Se3-ySy topological insulator under perpendicular magnetic field

NASA Astrophysics Data System (ADS)

Singh, Rahul; Gangwar, Vinod K.; Daga, D. D.; Singh, Abhishek; Ghosh, A. K.; Kumar, Manoranjan; Lakhani, A.; Singh, Rajeev; Chatterjee, Sandip

2018-03-01

The magneto-transport properties of Bi2Se3-ySy were investigated. Magnetoresistance (MR) decreases with an increase in the S content, and finally, for 7% (i.e., y = 0.21) S doping, the magnetoresistance becomes negative. This negative MR is unusual as it is observed when a magnetic field is applied in the perpendicular direction to the plane of the sample. The magneto-transport behavior shows the Shubnikov-de Haas (SdH) oscillation, indicating the coexistence of surface and bulk states. The negative MR has been attributed to the non-trivial bulk conduction.

Spin-glass and variable range hopping quantum interference magnetoresistance in FeSr2Y1.3Ce0.7Cu2O10-x

NASA Astrophysics Data System (ADS)

Sambale, S.; Williams, G. V. M.; Stephen, J.; Chong, S. V.

2014-12-01

Electronic transport and magnetic measurements have been made on FeSr2Y1.3Ce0.7Cu2O10-x. We observe a spin-glass at ˜23 K and a magnetoresistance that reaches -22% at 8 T. The magnetoresistance is due to variable range hopping quantum interference where at low temperatures each hop is over a large number of scatterers. This magnetoresistance is negative at and above 5 K and can be described by the Nguen, Spivak, and Shklovskii (NSS) model. However, there is an increasingly positive contribution to the magnetoresistance for temperatures below 5 K that may be due to scattering from localized free spins during each hop that is not accounted for in the NSS model.

Global Formation of Topological Defects in the Multiferroic Hexagonal Manganites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meier, Q. N.; Lilienblum, M.; Griffin, S. M.

The spontaneous transformations associated with symmetry-breaking phase transitions generate domain structures and defects that may be topological in nature. The formation of these defects can be described according to the Kibble-Zurek mechanism, which provides a generic relation that applies from cosmological to interatomic length scales. Its verification is challenging, however, in particular at the cosmological scale where experiments are impractical. While it has been demonstrated for selected condensed-matter systems, major questions remain regarding, e.g., its degree of universality. Here, we develop a global Kibble-Zurek picture from the condensed-matter level. We show theoretically that a transition between two fluctuation regimes (Ginzburgmore » and mean field) can lead to an intermediate region with reversed scaling, and we verify experimentally this behavior for the structural transition in the series of multiferroic hexagonal manganites. Trends across the series allow us to identify additional intrinsic features of the defect formation beyond the original Kibble-Zurek paradigm.« less

Global Formation of Topological Defects in the Multiferroic Hexagonal Manganites

DOE PAGES

Meier, Q. N.; Lilienblum, M.; Griffin, S. M.; ...

2017-10-20

The spontaneous transformations associated with symmetry-breaking phase transitions generate domain structures and defects that may be topological in nature. The formation of these defects can be described according to the Kibble-Zurek mechanism, which provides a generic relation that applies from cosmological to interatomic length scales. Its verification is challenging, however, in particular at the cosmological scale where experiments are impractical. While it has been demonstrated for selected condensed-matter systems, major questions remain regarding, e.g., its degree of universality. Here, we develop a global Kibble-Zurek picture from the condensed-matter level. We show theoretically that a transition between two fluctuation regimes (Ginzburgmore » and mean field) can lead to an intermediate region with reversed scaling, and we verify experimentally this behavior for the structural transition in the series of multiferroic hexagonal manganites. Trends across the series allow us to identify additional intrinsic features of the defect formation beyond the original Kibble-Zurek paradigm.« less

Micromagnetic simulation study of a disordered model for one-dimensional granular perovskite manganite oxide nanostructures

NASA Astrophysics Data System (ADS)

Longone, P.; Romá, F.

2018-06-01

Chemical techniques are an efficient method to synthesize one-dimensional perovskite manganite oxide nanostructures with a granular morphology, that is, formed by arrays of monodomain magnetic nanoparticles. Integrating the stochastic Landau-Lifshitz-Gilbert equation, we simulate the dynamics of a simple disordered model for such materials that only takes into account the morphological characteristics of their nanograins. We show that it is possible to describe reasonably well experimental hysteresis loops reported in the literature for single La0.67Ca0.33MnO3 nanotubes and powders of these nanostructures, simulating small systems consisting of only 100 nanoparticles.

Two-dimensional La2/3Sr4/3MnO4 Manganite Films Probed by Epitaxial Strain and Cation Ordering

NASA Astrophysics Data System (ADS)

Nelson-Cheeseman, Brittany; Santos, Tiffany; Bhattacharya, Anand

2010-03-01

Dimensionality is known to play a central role in the properties of strongly correlated systems. Here we investigate magnetism and transport in thin films of the Ruddlesden-Popper n=1 phase, La1-xSr1+xMnO4. Within this material, the MnO6-octahedra form two-dimensional perovskite sheets separated by an extra rocksalt layer. By fabricating high quality thin films with ozone-assisted molecular beam epitaxy, we study how the effects of epitaxial strain and intentional cation ordering, known as digital synthesis, influence the properties of this 2-dimensional manganite. For example, at the same Mn^3+:Mn^4+ ratio (2:1) as its fully spin-polarized 3D manganite counterpart, this two dimensional analog at x=1/3 only displays a spin glass phase below 20K in bulk. This is believed to result from a competition between superexchange and double exchange, as well as disordered Jahn-Teller distortions. However, in our films we find weak ferromagnetic order up to much higher temperatures in addition to a low temperature spin glass phase. We will discuss how strain and cation order effect the presence of this weak ferromagnetism.

Intrinsic Local Distortions and charge carrier behavior in CMR manganites and cobaltites

NASA Astrophysics Data System (ADS)

Bridges, Frank

2010-03-01

We compare and contrast the local structure and electronic configurations in two oxide systems La1-xSrxCoO3 (LSCO) and La1-yCayMnO3 (LCMO). Although these oxides may appear quite similar they have rather different properties. At x=0, LaCoO3 (LCO) has unusual magnetic properties - diamagnetic at low T but developing a moment near 100K. The Sr doped LSCO materials show ferromagnetism for x > 0.2. For LCO, one of the possible spin state configurations called the intermediate spin (IS) state (S=1), should be Jahn-Teller (JT) active, while the low spin (S=0) and high spin (S=2) states have no JT distortion. Early local structure measurements suggested a JT distortion was present in LCO and therefore supported an IS spin model. However we find no evidence for any significant JT distortion (and hence no support for the IS model) for a range of bulk and nanoparticle cobaltites La1-xSrxCoO3, x = 0 - 0.35. In contrast there are large JT distortions in the manganites LCMO, 0.2 < x < 0.5 (Mn-O bonds), for which CMR behavior is observed. We have shown that the JT distortions in the manganites depend on both temperature T and magnetic field B, and from the B-field dependence, propose the size and nature of the polarons in LCMO. We also present Co K-edge XANES data that shown no significant shift of the edge for the cobaltites as the Sr concentration increases from x =0 to 0.35 indicating essentially no change in the electronic configuration about Co; consequently, the holes introduced via Sr doping appear to go primarily into the O bands. In contrast there is a large shift of the Mn K-edge with Ca doping indicating a change in the average Mn valence, and a corresponding change in the Mn electronic configuration. We briefly discuss some possible models.

Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States.

PubMed

Zhao, Diyang; Qiao, Shuang; Luo, Yuxiang; Chen, Aitian; Zhang, Pengfei; Zheng, Ping; Sun, Zhong; Guo, Minghua; Chiang, Fu-Kuo; Wu, Jian; Luo, Jianlin; Li, Jianqi; Kokado, Satoshi; Wang, Yayu; Zhao, Yonggang

2017-03-29

The resistive switching (RS) effect in various materials has attracted much attention due to its interesting physics and potential for applications. NiO is an important system and its RS effect has been generally explained by the formation/rupture of Ni-related conducting filaments. These filaments are unique since they are formed by an electroforming process, so it is interesting to explore their magnetoresistance (MR) behavior, which can also shed light on unsolved issues such as the nature of the filaments and their evolution in the RS process, and this behavior is also important for multifunctional devices. Here, we focus on MR behavior in NiO RS films with different resistance states. Rich and interesting MR behaviors have been observed, including the normal and anomalous anisotropic magnetoresistance and tunneling magnetoresistance, which provide new insights into the nature of the filaments and their evolution in the RS process. First-principles calculation reveals the essential role of oxygen migration into the filaments during the RESET process and can account for the experimental results. Our work provides a new avenue for exploration of the conducting filaments in resistive switching materials and is significant for understanding the mechanism of RS effect and multifunctional devices.

Extremely large magnetoresistance and Kohler's rule in PdSn 4 : A complete study of thermodynamic, transport, and band-structure properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jo, Na Hyun; Wu, Yun; Wang, Lin-Lin

The recently discovered material PtSn 4 is known to exhibit extremely large magnetoresistance (XMR) that also manifests Dirac arc nodes on the surface. PdSn 4 is isostructural to PtSn 4 with the same electron count. Here, we report on the physical properties of high-quality single crystals of PdSn 4 including specific heat, temperature- and magnetic-field-dependent resistivity and magnetization, and electronic band-structure properties obtained from angle-resolved photoemission spectroscopy (ARPES). We observe that PdSn 4 has physical properties that are qualitatively similar to those of PtSn 4 , but find also pronounced differences. Importantly, the Dirac arc node surface state of PtSnmore » 4 is gapped out for PdSn 4. By comparing these similar compounds, we address the origin of the extremely large magnetoresistance in PdSn 4 and PtSn 4; based on detailed analysis of the magnetoresistivity ρ ( H , T ) , we conclude that neither the carrier compensation nor the Dirac arc node surface state are the primary reason for the extremely large magnetoresistance. On the other hand, we also find that, surprisingly, Kohler's rule scaling of the magnetoresistance, which describes a self-similarity of the field-induced orbital electronic motion across different length scales and is derived for a simple electronic response of metals to an applied magnetic field is obeyed over the full range of temperatures and field strengths that we explore.« less

Extremely large magnetoresistance and Kohler's rule in PdSn 4 : A complete study of thermodynamic, transport, and band-structure properties

DOE PAGES

Jo, Na Hyun; Wu, Yun; Wang, Lin-Lin; ...

2017-10-27

The recently discovered material PtSn 4 is known to exhibit extremely large magnetoresistance (XMR) that also manifests Dirac arc nodes on the surface. PdSn 4 is isostructural to PtSn 4 with the same electron count. Here, we report on the physical properties of high-quality single crystals of PdSn 4 including specific heat, temperature- and magnetic-field-dependent resistivity and magnetization, and electronic band-structure properties obtained from angle-resolved photoemission spectroscopy (ARPES). We observe that PdSn 4 has physical properties that are qualitatively similar to those of PtSn 4 , but find also pronounced differences. Importantly, the Dirac arc node surface state of PtSnmore » 4 is gapped out for PdSn 4. By comparing these similar compounds, we address the origin of the extremely large magnetoresistance in PdSn 4 and PtSn 4; based on detailed analysis of the magnetoresistivity ρ ( H , T ) , we conclude that neither the carrier compensation nor the Dirac arc node surface state are the primary reason for the extremely large magnetoresistance. On the other hand, we also find that, surprisingly, Kohler's rule scaling of the magnetoresistance, which describes a self-similarity of the field-induced orbital electronic motion across different length scales and is derived for a simple electronic response of metals to an applied magnetic field is obeyed over the full range of temperatures and field strengths that we explore.« less

In-Plane Angular Effect of Magnetoresistance of Quasi-One-Dimensional Organic Metals, (DMET) 2AuBr 2 and (TMTSF) 2ClO 4

NASA Astrophysics Data System (ADS)

Yoshino, Harukazu; Saito, Kazuya; Nishikawa, Hiroyuki; Kikuchi, Koichi; Kobayashi, Keiji; Ikemoto, Isao

1997-08-01

Comparative study is presented for the in-plane angular effect of magnetoresistance of quasi-one-dimensional organic conductors, (DMET)2AuBr2 and (TMTSF)2ClO4. The magnetoresistance for the magnetic and electrical fields parallel and perpendicular to the most conducting plane, respectively, was measured at 4.2 K and up to 7.0 T. (DMET)2AuBr2 shows an anomalous hump in the field-orientation dependence of the magnetoresistance for the magnetic field nearly parallel to the most conducting axis and this is very similar to what previously reported for (DMET)2I3. Weak anomaly was detected for the magnetoresistance of (TMTSF)2ClO4 in the Relaxed state, while no anomaly was observed in the SDW phase in the Quenched state. By comparing the numerical angular derivatives of the magnetoresistance, it is shown that the anomaly in the in-plane angular effect continuously develops from zero magnetic field and is closely related to the quasi-one-dimensional Fermi surface. A simple method is proposed to estimate the anisotropy of the transfer integral from the width of the hump anomaly.

Charge versus orbital-occupancy ordering in manganites

NASA Astrophysics Data System (ADS)

Luo, Weidong; Varela, Maria; Tao, Jing; Pennycook, Stephen J.; Pantelides, Sokrates T.

2006-03-01

It is generally assumed that density-functional theory (DFT) in the local-spin-density approximation (LSDA) or the generalized- gradient approximation (GGA) is not adequate to describe mixed- valence manganites. Here we report benchmark DFT/GGA calculations for the ground-state structural, electronic and magnetic properties for both undoped and doped CaMnO3 and find the results to be in excellent agreement with available data, including new atomic-resolution Z-contrast imaging and electron-energy loss spectra. More specifically, we found that the DFT results predict two inequivalent Mn atoms in both 0.33 and 0.5 electron-doped CaMnO3, in agreement with experimental evidence of Mn^+3/Mn^+4 oxidation state ordering. The inequivalent Mn atoms are marked by their distinctive orbital occupancies, dissimilar local Jahn-Teller distortion and different magnetic moments from DFT calculations. We also show that the spherically integrated charges associated with the two inequivalent Mn atoms are the same, and they are actually the same as in the Mn metal. This charge neutrality with different orbital occupancies is the result of self-consistency and atomic relaxations in the crystal. We conclude that DFT without additional correlations can account for the observed properties of oxidation-state ordering in this system. The impact of the results on other mixed-valence systems will be discussed.

Electrical, thermal and magnetic studies on 7.5 MeV electron beam irradiated PrCoO3 polycrystalline samples

NASA Astrophysics Data System (ADS)

Christopher, Benedict; Rao, Ashok; Deka, Utpal; Prasad K, Shyam; Okram, G. S.; Sanjeev, Ganesh; Chandra Petwal, Vikash; Verma, Vijay Pal; Dwivedi, Jishnu

2018-07-01

The study of electronic and magnetic properties of electron beam (EB) irradiated PrCoO3 manganites is presented in this communication. The diffraction data confirms that pristine as well as electron beam irradiated samples are single phased and they crystalize at orthorhombic distorted structure with Pbnm space group. The electrical resistivity of all the samples reveals semiconducting behavior. Small polaron hopping model is appropriately employed to investigate the semiconducting nature of the pristine and EB irradiated samples. The Seebeck coefficient (S) data of the pristine sample exhibits colossally high positive value (about 300 mV/K) and substantial decrease in S value is noticed in the irradiated samples. The high temperature analysis of thermopower data validates the small polaron hopping model. The magnetic measurements display possible existence of super-paramagnetic characteristics in the samples.

Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

PubMed

Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

2017-10-26

The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

Magnetism at grain boundary interfacesin the colossal permittivity dielectric material; In+Nb Co-Doped Rutile

NASA Astrophysics Data System (ADS)

Berlie, Adam; Terry, Ian; Cottrell, Stephen; Hu, Wanbiao; Liu, Yun

With the emphasis in recent years on understanding novel materials with potential technological applications this work seeks to understand magnetic ordering within the colossal-permittivity material, In+Nb co-doped rutile (TiO2). Evidence for a spin-freezing transition was reported from a step like feature in the dielectic data below 50 K but this was largly glossed over. Within this work we show that below 300 K there is a slowing down of magnetic fluctuations associated with the electronic magnetism due to the defect-dipoles created by the co-doping, but the muon spectroscopy results are strongly suggestive of the behaviour being localised to the edges/interfaces of particles/grains. The TC is strongly dependent on the doping level of the samples that presents novel way to control the magnetism and ultimately magneto-electric coupling within a dielectric material.

Influence of Ce Doping on Structural and Transport Properties of Ca1- x Ce x MnO3 ( x=0.2) Manganite

NASA Astrophysics Data System (ADS)

Varshney, Dinesh; Mansuri, Irfan

2011-01-01

We have investigated structural, electric, magnetic and thermal transport properties of electron doped Ca1- x Ce x MnO3 ( x=0.2) manganites. The Cerium substitution for Ca2+causes electron doping into insulating CaMnO3 without e g electron. At room temperature the polycrystalline Ca0.8Ce0.2MnO3 is in the crystallographic orthorhombic structure, with Pnma space group symmetry from the refinement of x-ray powder diffraction patterns. The electrical resistivity data infers that Ca0.8Ce0.2MnO3 manganite is in the semiconducting phase. A smooth linear behavior of log plot values is obtained and is well fitted with adiabatic small polaron conduction model. Nearest-neighbor hopping of a small polaron leads to a mobility with a thermally activated form. The negative values of thermopower infer electron as carriers in Ca0.8Ce0.2MnO3. From susceptibility measurements the Ce doped CaMnO3 shows a transition from antiferromagnetic (AFM) to paramagnetic (PM) phase.

Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film

NASA Astrophysics Data System (ADS)

Zhang, Le; Chen, Shanshan; Chen, Xiangyang; Ye, Zhizhen; Zhu, Liping

2018-04-01

Electrical control of the multistate phase in semiconductors offers the promise of nonvolatile functionality in the future semiconductor spintronics. Here, by applying an external electric field, we have observed a gate-induced insulator-metal transition (MIT) with the temperature dependence of resistivity in ZnO thin films. Due to a high-density carrier accumulation, we have shown the ability to inverse change magnetoresistance in ZnO by ionic liquid gating from 10% to -2.5%. The evolution of photoluminescence under gate voltage was also consistent with the MIT, which is due to the reduction of dislocation. Our in-situ gate-controlled photoluminescence, insulator-metal transition, and the conversion of magnetoresistance open up opportunities in searching for quantum materials and ZnO based photoelectric devices.

Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu

2016-01-04

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switchingmore » using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.« less

Magnetoresistive Current Sensors for High Accuracy, High Bandwidth Current Measurement in Spacecraft Power Electronics

NASA Astrophysics Data System (ADS)

Slatter, Rolf; Goffin, Benoit

2014-08-01

The usage of magnetoresistive (MR) current sensors is increasing steadily in the field of power electronics. Current sensors must not only be accurate and dynamic, but must also be compact and robust. The MR effect is the basis for current sensors with a unique combination of precision and bandwidth in a compact package. A space-qualifiable magnetoresistive current sensor with high accuracy and high bandwidth is being jointly developed by the sensor manufacturer Sensitec and the spacecraft power electronics supplier Thales Alenia Space (T AS) Belgium. Test results for breadboards incorporating commercial-off-the-shelf (COTS) sensors are presented as well as an application example in the electronic control and power unit for the thrust vector actuators of the Ariane5-ME launcher.

Physical aspects of colossal dielectric constant material CaCu3Ti4O12 thin films

NASA Astrophysics Data System (ADS)

Deng, Guochu; He, Zhangbin; Muralt, Paul

2009-04-01

The underlying physical mechanism of the so-called colossal dielectric constant phenomenon in CaCu3Ti4O12 (CCTO) thin films were investigated by using semiconductor theories and methods. The semiconductivity of CCTO thin films originated from the acceptor defect at a level ˜90 meV higher than valence band. Two contact types, metal-semiconductor and metal-insulator-semiconductor junctions, were observed and their barrier heights, and impurity concentrations were theoretically calculated. Accordingly, the Schottky barrier height of metal-semiconductor contact is about 0.8 eV, and the diffusion barrier height of metal-insulator-semiconductor contact is about 0.4-0.7 eV. The defect concentrations of both samples are quite similar, of the magnitude of 1019 cm-3, indicating an inherent feature of high defect concentration.

Colossal terahertz nonlinearity of tunneling van der Waals gap (Conference Presentation)

NASA Astrophysics Data System (ADS)

Bahk, Young-Mi; Kang, Bong Joo; Kim, Yong Seung; Kim, Joon-Yeon; Kim, Won Tae; Kim, Tae Yun; Kang, Taehee; Rhie, Ji Yeah; Han, Sanghoon; Park, Cheol-Hwan; Rotermund, Fabian; Kim, Dai-Sik

2016-09-01

We manufactured an array of three angstrom-wide, five millimeter-long van der Waals gaps of copper-graphene-copper composite, in which unprecedented nonlinearity was observed. To probe and manipulate van der Waals gaps with long wavelength electromagnetic waves such as terahertz waves, one is required to fabricate vertically oriented van der Waals gaps sandwiched between two metal planes with an infinite length in the sense of being much larger than any of the wavelengths used. By comparison with the simple vertical stacking of metal-graphene-metal structure, in our structure, background signals are completely blocked enabling all the light to squeeze through the gap without any strays. When the angstrom-sized van der Waals gaps are irradiated with intense terahertz pulses, the transient voltage across the gap reaches up to 5 V with saturation, sufficiently strong to deform the quantum barrier of angstrom gaps. The large transient potential difference across the gap facilitates electron tunneling through the quantum barrier, blocking terahertz waves completely. This negative feedback of electron tunneling leads to colossal nonlinear optical response, a 97% decrease in the normalized transmittance. Our technology for infinitely long van der Waals gaps can be utilized for other atomically thin materials than single layer graphene, enabling linear and nonlinear angstrom optics in a broad spectral range.

Influence of nonmagnetic Al ions on magnetoresistance of double-perovskite Sr2Fe1-xAlxMoO6 (0<=x<=0.30)

NASA Astrophysics Data System (ADS)

Sui, Yu; Wang, Xianjie; Cheng, Jinguang; Liu, Zhiguo; Miao, Jipeng; Huang, Xiqiang; Lu, Zhe; Qian, Zhengnan; Su, Wenhui; Tang, Jinke; Ong, C. K.

2005-09-01

The structural, magnetic, and magnetoresistance properties of the double-perovskite series Sr2Fe1-xAlxMoO6 (0<=x<=0.30) were systematically investigated in order to clarify the influence of nonmagnetic Al ions on the magnetoresistance. The structural refinements of these samples show that the degree of cationic order increases gradually from 88.5% for x=0 to 92% for x=0.30 without any change in the crystal structure. The magnetization measurements reveal that the substitution of nonmagnetic Al ion for Fe ion enhances the magnetic moment per Fe ion significantly. In addition, the magnetic-field dependence of magnetization and magnetoresistance of these Sr2Fe1-xAlxMoO6 samples were all fitted excellently by taking into account the contributions from ferromagnetic-coupled Fe-O-Mo region and nonferromagnetic-coupled regions. The fitting results indicate that the low-field magnetoresistance can be greatly enhanced due to the separation of the cationic-ordered Fe-O-Mo regions by the paramagnetic Mo-O-Al-O-Mo chains introduced through Al doping. Furthermore, doping nonmagnetic Al ions also suppress the formation of antiferromagnetic Fe-O-Fe antiphase boundaries, and then lead to the improvement of cation ordering and the reduction of magnetoresistance under high field.

Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid

NASA Astrophysics Data System (ADS)

Shang, T.; Zhan, Q. F.; Ma, L.; Yang, H. L.; Zuo, Z. H.; Xie, Y. L.; Li, H. H.; Liu, L. P.; Wang, B. M.; Wu, Y. H.; Zhang, S.; Li, Run-Wei

2015-12-01

We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y3Fe5O12 (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magne toresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed in the temperature range of 5-300 K. In contrast, a reduced SMR with negligible CAMR and AHR was found in Rh/YIG hybrid. Since CAMR and AHR are characteristics for all ferromagnetic metals, our results suggest that the Pt is likely magnetized by YIG due to the magnetic proximity effect (MPE) while Rh remains free of MPE. Thus the Rh/YIG hybrid could be an ideal model system to explore physics and devices associated with pure spin current.

Using granular C0-AI2O3 spacer for optimization of functional parameters of the FeMn/Fe20Ni80 magnetoresistive films

NASA Astrophysics Data System (ADS)

Gorkovenko, A. N.; Lepalovskij, V. N.; Adanakova, O. A.; Vas'kovskiy, V. O.

2016-03-01

In this paper we studied the possibility of tailoring the functional properties of the multilayer magnetoresistive medium with unidirectional anisotropy and the anisotropic magnetoresistance effect (AMR). Objects of the research were composite Co-Al2O3 films and Ta/Fe20Ni80/Fe50Mn50/Fe20Ni80/Co-Al2O3/Fe20Ni80/Ta multilayers structures obtained by magnetron sputtering and selectively subjected vacuum annealing. Structure, magnetic and magnetoresistive properties of the films in the temperature range 77÷440 K were investigated.

Investigation on the structural, magnetic and magnetocaloric properties of nanocrystalline Pr-deficient Pr1-xSrxMnO3-δ manganites

NASA Astrophysics Data System (ADS)

Arun, B.; Athira, M.; Akshay, V. R.; Sudakshina, B.; Mutta, Geeta R.; Vasundhara, M.

2018-02-01

We have investigated the structural, magnetic and magnetocaloric properties of nanocrystalline Pr-deficient Pr1-xSrxMnO3-δ Perovskite manganites. Rietveld refinement of the X-ray powder diffraction patterns confirms that all the studied compounds have crystallized into an orthorhombic structure with Pbnm space group. Transmission electron microscopy analysis reveals nanocrystalline compounds with crystallite size less than 50 nm. The selected area electron diffraction patterns reveal the highly crystalline nature of the compounds and energy dispersive X-ray spectroscopic analysis shows that the obtained compositions are nearly identical with the nominal one. The oxygen stoichiometry is estimated by iodometric titration method and stoichiometric compositions are confirmed by X-ray Fluorescence Spectrometry analysis. A large bifurcation is observed in the ZFC/FC curves and Arrott plots not show a linear relation but have a convex curvature nature. The temperature dependence of inverse magnetic susceptibility at higher temperature confirms the existence of ferromagnetic clusters. The experimental results reveal that the reduction of crystallite size to nano metric scale in Pr-deficient manganites adversely influences structural, magnetic and magnetocaloric properties as compared to its bulk counterparts reported earlier.

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

DOE PAGES

Althammer, Matthias; Bavarian Academy of Sciences and Humanities; Vikam Singh, Amit; ...

2016-12-16

In this paper, we experimentally investigate the structural, magnetic, and electrical transport properties of La 0.67 Sr 0.33MnO 3 based magnetic tunnel junctions with a SrSnO 3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance (TMR) is comparable to tunnel junctions with a better lattice matched SrTiO 3 barrier, reaching values of up to 350% at T = 5K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease ofmore » the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T > 200K. Finally, our results suggest that by employing a better lattice matched ferromagnetic electrode, and thus reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future.« less

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Althammer, Matthias; Bavarian Academy of Sciences and Humanities; Vikam Singh, Amit

In this paper, we experimentally investigate the structural, magnetic, and electrical transport properties of La 0.67 Sr 0.33MnO 3 based magnetic tunnel junctions with a SrSnO 3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance (TMR) is comparable to tunnel junctions with a better lattice matched SrTiO 3 barrier, reaching values of up to 350% at T = 5K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease ofmore » the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T > 200K. Finally, our results suggest that by employing a better lattice matched ferromagnetic electrode, and thus reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future.« less

Extremely Large Magnetoresistance in a Topological Semimetal Candidate Pyrite PtBi2

NASA Astrophysics Data System (ADS)

Gao, Wenshuai; Hao, Ningning; Zheng, Fa-Wei; Ning, Wei; Wu, Min; Zhu, Xiangde; Zheng, Guolin; Zhang, Jinglei; Lu, Jianwei; Zhang, Hongwei; Xi, Chuanying; Yang, Jiyong; Du, Haifeng; Zhang, Ping; Zhang, Yuheng; Tian, Mingliang

2017-06-01

While pyrite-type PtBi2 with a face-centered cubic structure has been predicted to be a three-dimensional (3D) Dirac semimetal, experimental study of its physical properties remains absent. Here we report the angular-dependent magnetoresistance measurements of a PtBi2 single crystal under high magnetic fields. We observed extremely large unsaturated magnetoresistance (XMR) up to (11.2 ×106)% at T =1.8 K in a magnetic field of 33 T, which is comparable to the previously reported Dirac materials, such as WTe2 , LaSb, and NbP. The crystals exhibit an ultrahigh mobility and significant Shubnikov-de Hass quantum oscillations with a nontrivial Berry phase. The analysis of Hall resistivity indicates that the XMR can be ascribed to the nearly compensated electron and hole. Our experimental results associated with the ab initio calculations suggest that pyrite PtBi2 is a topological semimetal candidate that might provide a platform for exploring topological materials with XMR in noble metal alloys.

Structure and colossal dielectric permittivity of Ca2TiCrO6 ceramics

NASA Astrophysics Data System (ADS)

Yan-Qing, Tan; Meng, Yan; Yong-Mei, Hao

2013-01-01

A colossal permittivity ceramic material, Ca2TiCrO6, was successfully synthesized by the conventional solid-state reaction, and was characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), x-ray photoemission spectroscopy (XPS) and x-ray diffraction (XRD). Rietveld refinement of XRD data indicated that the material crystallized in orthorhombic structure with space group pbnm. SEM displayed Ca2TiCrO6 ceramic grains packed uniformly with the size range 5-20 µm. XPS analyses indicated that elemental chromium and titanium of the material were in mixed valence. The corresponding dielectric property was tested in the frequency range 1 kHz-1 MHz and the temperature range 213-453 K, and the ceramics exhibited a relaxation-like dielectric behaviour. Importantly, the permittivity of Ca2TiCrO6 could reach 80 000 at 298 K (100 Hz) and was maintained at 40 000 up to 398 K at 1 MHz, which could be attributed to the ion disorder and mixed valence of Cr3+/Cr6+ and Ti3+/Ti4+.

Colossal intrinsic magnetoelectric effect in Pb(Fe2/3W1/3)0.83Ti0.17O3

NASA Astrophysics Data System (ADS)

Fraygola, B.; Coelho, Adelino A.; Garcia, D.; Eiras, J. A.

2012-08-01

Dielectric and magnetic properties were investigated in Pb(Fe2/3W1/3)0.83Ti0.17O3 ceramics. The dielectric constant in these samples exhibits colossal changes at the magnetic ordering temperature under the presence of bias external electric fields, which presents a close connection with magnetoelectrics effects (ME), confirming the possibility to control magnetic proprieties with electric fields. The ferroelectromagnetoelastic coefficient was determined from the dielectric response as a function of the electric field. The analysis of magnetic and dielectric susceptibilities based on the Landau-Devonshire thermodynamic formalisms indicates that the ME effects is a contribution of intrinsic ME coupling and a field dependent term.

Co layer fragmentation effect on magnetoresistive and structural properties of nanogranular Co/Cu multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spizzo, F.; Ronconi, F.; Ferrero, C.

We deposited nanogranular Co/Cu multilayers made of thin fragmented Co layers separated by thicker Cu layers to study how the structure and the microstructure of magnetic nanogranular samples change as the average particle size is reduced and how these changes affect the giant magnetoresistive response of the samples. Indeed, thanks to the vertical periodicity of the structure, namely, to the fact that Co/Cu interfaces display an ordered stacking and are not randomly distributed within the samples as in conventional granular materials, their self-correlation and cross correlation can be investigated. In this way, the characteristic length scale of the Co/Cu interfacialmore » roughness that is strictly related to the giant magnetoresistive response of the samples and the universality class of the growth mechanism that affects the systems structure can be both accessed. The Co/Cu nanogranular multilayers were characterized using different x-ray techniques, from specular reflectivity, which allows to probe the multilayer development in the vertical direction, to grazing incidence small angle diffuse scattering, which provides information on the self-correlation and cross correlation of the Co/Cu interfaces. Furthermore, diffraction measurements indicate that the degree of structural disorder increases by decreasing the thickness of the Co layers. Magnetoresistive and magnetization measurements are as well presented and discussed with the results of the structural characterization.« less

Cold-Rolled Strip Steel Stress Detection Technology Based on a Magnetoresistance Sensor and the Magnetoelastic Effect.

PubMed

Guan, Ben; Zang, Yong; Han, Xiaohui; Zheng, Kailun

2018-05-21

Driven by the demands for contactless stress detection, technologies are being used for shape control when producing cold-rolled strips. This paper presents a novel contactless stress detection technology based on a magnetoresistance sensor and the magnetoelastic effect, enabling the detection of internal stress in manufactured cold-rolled strips. An experimental device was designed and produced. Characteristics of this detection technology were investigated through experiments assisted by theoretical analysis. Theoretically, a linear correlation exists between the internal stress of strip steel and the voltage output of a magneto-resistive sensor. Therefore, for this stress detection system, the sensitivity of the stress detection was adjusted by adjusting the supply voltage of the magnetoresistance sensor, detection distance, and other relevant parameters. The stress detection experimental results showed that this detection system has good repeatability and linearity. The detection error was controlled within 1.5%. Moreover, the intrinsic factors of the detected strip steel, including thickness, carbon percentage, and crystal orientation, also affected the sensitivity of the detection system. The detection technology proposed in this research enables online contactless detection and meets the requirements for cold-rolled steel strips.

Cold-Rolled Strip Steel Stress Detection Technology Based on a Magnetoresistance Sensor and the Magnetoelastic Effect

PubMed Central

Guan, Ben; Zang, Yong; Han, Xiaohui; Zheng, Kailun

2018-01-01

Driven by the demands for contactless stress detection, technologies are being used for shape control when producing cold-rolled strips. This paper presents a novel contactless stress detection technology based on a magnetoresistance sensor and the magnetoelastic effect, enabling the detection of internal stress in manufactured cold-rolled strips. An experimental device was designed and produced. Characteristics of this detection technology were investigated through experiments assisted by theoretical analysis. Theoretically, a linear correlation exists between the internal stress of strip steel and the voltage output of a magneto-resistive sensor. Therefore, for this stress detection system, the sensitivity of the stress detection was adjusted by adjusting the supply voltage of the magnetoresistance sensor, detection distance, and other relevant parameters. The stress detection experimental results showed that this detection system has good repeatability and linearity. The detection error was controlled within 1.5%. Moreover, the intrinsic factors of the detected strip steel, including thickness, carbon percentage, and crystal orientation, also affected the sensitivity of the detection system. The detection technology proposed in this research enables online contactless detection and meets the requirements for cold-rolled steel strips. PMID:29883387

Growth and Characterization of Reduced Dimensionality Superconductor-Related Phases by Molecular Beam Epitaxy

DTIC Science & Technology

1998-02-01

BaTiO3 Ferromagnets M., = 1.4 g SrRuO3 Colossal Magnetoresistance AR/RH > 104~ (6 T) (La,Sr)MnO 3 3 submitted to JOM B4Ti 3O12 PbUiO 3 (Ba,K)BiO3 YBa2C...films, perhaps as a result of those films being closer to the correct Ba/Ti stoichiometric ratio. This is seen in Fig. 5, where data for the permittivity ...as a function of temperature is shown for a 60 nm thick BaTiO 3 film (Note Permittivity BSS-12 -- Ls BSS12 that as explained earlier, this film

Negative Magnetoresistance in Amorphous Indium Oxide Wires

PubMed Central

Mitra, Sreemanta; Tewari, Girish C; Mahalu, Diana; Shahar, Dan

2016-01-01

We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions. PMID:27876859

Evaluation of Magnetoresistive RAM for Space Applications

NASA Technical Reports Server (NTRS)

Heidecker, Jason

2014-01-01

Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

Temperature Dependent Magnetoresistance of CeCu2Si2 up to 60 T [Proposal: P14728

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stritzinger, Laurel Elaine Winter; Lai, Y.; Mcdonald, Ross David

2017-03-23

We recently investigated the chemical substitution series CeCu2Si2-xPx, for x = 0, 0.01, and 0.14, using a contactless tunnel diode oscillator technique. These measurements revealed previously unreported Shubnikov-de Haas oscillations above 45 T with an unusual temperature dependence that could potentially be explained by a high magnetic field transition. To investigate this possible transition, magnetoresistance measurements were desired. However, initial magnetoresistance measurements on CeCu2Si2 showed poor signal-to-noise due to the small value of the sample's resistivity. To overcome this obstacle, we performed micro-structuring of a single crystal specimen to increase the sample's resistance.

Realisation of all 16 Boolean logic functions in a single magnetoresistance memory cell

NASA Astrophysics Data System (ADS)

Gao, Shuang; Yang, Guang; Cui, Bin; Wang, Shouguo; Zeng, Fei; Song, Cheng; Pan, Feng

2016-06-01

Stateful logic circuits based on next-generation nonvolatile memories, such as magnetoresistance random access memory (MRAM), promise to break the long-standing von Neumann bottleneck in state-of-the-art data processing devices. For the successful commercialisation of stateful logic circuits, a critical step is realizing the best use of a single memory cell to perform logic functions. In this work, we propose a method for implementing all 16 Boolean logic functions in a single MRAM cell, namely a magnetoresistance (MR) unit. Based on our experimental results, we conclude that this method is applicable to any MR unit with a double-hump-like hysteresis loop, especially pseudo-spin-valve magnetic tunnel junctions with a high MR ratio. Moreover, after simply reversing the correspondence between voltage signals and output logic values, this method could also be applicable to any MR unit with a double-pit-like hysteresis loop. These results may provide a helpful solution for the final commercialisation of MRAM-based stateful logic circuits in the near future.Stateful logic circuits based on next-generation nonvolatile memories, such as magnetoresistance random access memory (MRAM), promise to break the long-standing von Neumann bottleneck in state-of-the-art data processing devices. For the successful commercialisation of stateful logic circuits, a critical step is realizing the best use of a single memory cell to perform logic functions. In this work, we propose a method for implementing all 16 Boolean logic functions in a single MRAM cell, namely a magnetoresistance (MR) unit. Based on our experimental results, we conclude that this method is applicable to any MR unit with a double-hump-like hysteresis loop, especially pseudo-spin-valve magnetic tunnel junctions with a high MR ratio. Moreover, after simply reversing the correspondence between voltage signals and output logic values, this method could also be applicable to any MR unit with a double-pit-like hysteresis

Growth of electronically distinct manganite thin films by modulating cation stoichiometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryu, Sangkyun; Lee, Joonhyuk; Ahn, Eunyoung

Nd 1-xSr xMnO 3 (NSMO) is a well-known manganite due to close connection between structure, transport, magnetism, and chemistry. Thus, it would be an ideal system to study modification of physical properties by external stimuli including control of stoichiometry in growth. In this work, we show that abrupt change of electronic and magnetic properties can be achieved by subtle change of oxygen partial pressure in pulsed laser deposition. Interestingly, the pressure indeed modulates cation stoichiometry. We clearly observed that the films grown at 150 mTorr and higher showed clear insulator to metal transition and stronger magnetism, commonly found in lessmore » hole doping, while the films grown at 130 mTorr and lower showed insulating behavior and weak magnetism. From soft x-ray spectroscopic methods, we clearly observed the compositional difference in those thin films. This result is further supported by scattering of lighter elements in high oxygen partial pressure but not by anion deficiency in growth.« less

Growth of electronically distinct manganite thin films by modulating cation stoichiometry

DOE PAGES

Ryu, Sangkyun; Lee, Joonhyuk; Ahn, Eunyoung; ...

2017-06-26

Nd 1-xSr xMnO 3 (NSMO) is a well-known manganite due to close connection between structure, transport, magnetism, and chemistry. Thus, it would be an ideal system to study modification of physical properties by external stimuli including control of stoichiometry in growth. In this work, we show that abrupt change of electronic and magnetic properties can be achieved by subtle change of oxygen partial pressure in pulsed laser deposition. Interestingly, the pressure indeed modulates cation stoichiometry. We clearly observed that the films grown at 150 mTorr and higher showed clear insulator to metal transition and stronger magnetism, commonly found in lessmore » hole doping, while the films grown at 130 mTorr and lower showed insulating behavior and weak magnetism. From soft x-ray spectroscopic methods, we clearly observed the compositional difference in those thin films. This result is further supported by scattering of lighter elements in high oxygen partial pressure but not by anion deficiency in growth.« less

Lanthanum manganite-based air electrode for solid oxide fuel cells

DOEpatents

Ruka, Roswell J.; Kuo, Lewis; Li, Baozhen

1999-01-01

An air electrode material for a solid oxide fuel cell is disclosed. The electrode material is based on lanthanum manganite having a perovskite-like crystal structure ABO.sub.3. The A-site of the air electrode material preferably comprises La, Ca, Ce and at least one lanthanide selected from Sm, Gd, Dy, Er, Y and Nd. The B-site of the electrode material comprises Mn with substantially no dopants. The ratio of A:B is preferably slightly above 1. A preferred air electrode composition is of the formula La.sub.w Ca.sub.x Ln.sub.y Ce.sub.z MnO.sub.3, wherein Ln comprises at least one lanthanide selected from Sm, Gd, Dy, Er, Y and Nd, w is from about 0.55 to about 0.56, x is from about 0.255 to about 0.265, y is from about 0.175 to about 0.185, and z is from about 0.005 to about 0.02. The air electrode material possesses advantageous chemical and electrical properties as well as favorable thermal expansion and thermal cycle shrinkage characteristics.

Spectroscopic Evidence of Formation of Small Polarons in Doped Manganites

NASA Astrophysics Data System (ADS)

Moritomo, Yutaka; Machida, Akihiko; Nakamura, Arao

1998-03-01

Temperature dependence of absorption spectra for thin films of doped manganites R_0.6Sr_0.4MnO_3, where R is rare-earth atom, has been investigated systematically changing averaged ionic radius < rA > of perovskite A-site. We have observed a specific absorption band at ~1.5eV due to optical excitations from small polarons (SP)(Machida et al.), submitted.. Spectral weight of the SP band increases with decreasing temperature and eventually disappears at the insulator-metal (IM) transition, indicating that SP in the paramagnetic state (T >= T_C) changes into bare electrons (or large polarons) in the ferromagnetic state due to the enhanced one-electron bandwidth W. We further derived important physical quantities, i.e., W, on-site exchange interaction J and binding energy Ep of SP, and discuss material dependence of stability of SP. This work was supported by a Grant-In-Aid for Scientific Research from the Ministry of Education, Science, Sport and Culture and from PRESTO, Japan Scienece and Technology Corporation (JST), Japan.

Ultrafast photo-induced hidden phases in strained manganite thin films

NASA Astrophysics Data System (ADS)

Zhang, Jingdi; McLeod, A. S.; Zhang, Gu-Feng; Stoica, Vladimir; Jin, Feng; Gu, Mingqiang; Gopalan, Venkatraman; Freeland, John W.; Wu, Wenbin; Rondinelli, James; Wen, Haidan; Basov, D. N.; Averitt, R. D.

Correlated transition metal oxides (TMOs) are particularly sensitive to external control because of energy degeneracy in a complex energy landscape that promote a plethora of metastable states. However, it remains a grand challenge to actively control and fully explore the rich landscape of TMOs. Dynamic control with pulsed photons can overcome energetic barriers, enabling access to transient or metastable states that are not thermally accessible. In the past, we have demonstrated that mode-selective single-laser-pulse excitation of a strained manganite thin film La2/3Ca1/3MnO3 initiates a persistent phase transition from an emergent antiferromagnetic insulating ground state to a ferromagnetic metallic metastable state. Beyond the photo-induced insulator to metal transition, we recently discovered a new peculiar photo-induced hidden phase, identified by an experimental approach that combines ultrafast pump-probe spectroscopy, THz spectroscopy, X-ray diffraction, cryogenic near-field spectroscopy and SHG probe. This work is funded by the DOE, Office of Science, Office of Basic Energy Science under Award Numbers DE-SC0012375 and DE-SC0012592.

Large room-temperature tunneling anisotropic magnetoresistance and electroresistance in single ferromagnet/Nb:SrTiO3 Schottky devices.

PubMed

Kamerbeek, Alexander M; Ruiter, Roald; Banerjee, Tamalika

2018-01-22

There is a large effort in research and development to realize electronic devices capable of storing information in new ways - for instance devices which simultaneously exhibit electro and magnetoresistance. However it remains a challenge to create devices in which both effects coexist. In this work we show that the well-known electroresistance in noble metal-Nb:SrTiO 3 Schottky junctions can be augmented by a magnetoresistance effect in the same junction. This is realized by replacing the noble metal electrode with ferromagnetic Co. This magnetoresistance manifests as a room temperature tunneling anisotropic magnetoresistance (TAMR). The maximum room temperature TAMR (1.6%) is significantly larger and robuster with bias than observed earlier, not using Nb:SrTiO 3 . In a different set of devices, a thin amorphous AlO x interlayer inserted between Co and Nb:SrTiO 3 , reduces the TAMR by more than 2 orders of magnitude. This points to the importance of intimate contact between the Co and Nb:SrTiO 3 for the TAMR effect. This is explained by electric field enhanced spin-orbit coupling of the interfacial Co layer in contact with Nb:SrTiO 3 . We propose that the large TAMR likely has its origin in the 3d orbital derived conduction band and large relative permittivity of Nb:SrTiO 3 and discuss ways to further enhance the TAMR.

Development and Application of Wide Bandwidth Magneto-Resistive Sensor Based Eddy Current Probe

NASA Technical Reports Server (NTRS)

Wincheski, Russell A.; Simpson, John

2010-01-01

The integration of magneto-resistive sensors into eddy current probes can significantly expand the capabilities of conventional eddy current nondestructive evaluation techniques. The room temperature solid-state sensors have typical bandwidths in the megahertz range and resolutions of tens of microgauss. The low frequency sensitivity of magneto-resistive sensors has been capitalized upon in previous research to fabricate very low frequency eddy current sensors for deep flaw detection in multilayer conductors. In this work a modified probe design is presented to expand the capabilities of the device. The new probe design incorporates a dual induction source enabling operation from low frequency deep flaw detection to high frequency high resolution near surface material characterization. Applications of the probe for the detection of localized near surface conductivity anomalies are presented. Finite element modeling of the probe is shown to be in good agreement with experimental measurements.

High magnetic field magnetoresistance anomalies in the charge density wave state of the quasi-two dimensional bronze KMo6O{17}

NASA Astrophysics Data System (ADS)

Guyot, H.; Dumas, J.; Marcus, J.; Schlenker, C.; Vignolles, D.

2005-12-01

We report high magnetic field magnetoresistance measurements performed in pulsed fields up to 55 T on the quasi-two dimensional charge density wave conductor KMo{6}O{17}. Magnetoresistance curves show several anomalies below 28 T. First order transitions to smaller gap states take place at low temperature above 30 T. A phase diagram T(B) has been obtained. The angular dependence of the anomalies is reported.

Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

NASA Astrophysics Data System (ADS)

Göckeritz, Robert; Homonnay, Nico; Müller, Alexander; Fuhrmann, Bodo; Schmidt, Georg

2016-04-01

Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

Degradation of the Giant Magnetoresistance in Fe/Cr Multilayers Due to Ar-Ion Beam Mixing

NASA Astrophysics Data System (ADS)

Kopcewicz, M.; Stobiecki, F.; Jagielski, J.; Szymański, B.; Schmidt, M.; Kalinowska, J.

2002-12-01

The influence of 200 keV Ar-ion irradiation on the interlayer coupling in the Fe/Cr multilayer system exhibiting the giant magnetoresistance effect (GMR) is studied by conversion electron Mössbauer spectroscopy (CEMS), VSM hysteresis loops, magnetoresistivity and electric resistivity measurements and supplemented by the small-angle X-ray diffraction (SAXRD). The increase of Ar ion dose causes an increase of interface roughness, as evidenced by the increase of the Fe step-sites detected by CEMS as a result of which the GMR gradually decreases and vanishes at doses exceeding 1×1014 Ar/cm2. A degradation of GMR with increasing Ar-ion dose is related to the formation of pinholes between Fe layers and the decrease of the antiferromagnetically coupled fraction.

Domain configurations in dislocations embedded hexagonal manganite systems: From the view of graph theory

NASA Astrophysics Data System (ADS)

Cheng, Shaobo; Zhang, Dong; Deng, Shiqing; Li, Xing; Li, Jun; Tan, Guotai; Zhu, Yimei; Zhu, Jing

2018-04-01

Topological defects and their interactions often arouse multiple types of emerging phenomena from edge states in Skyrmions to disclination pairs in liquid crystals. In hexagonal manganites, partial edge dislocations, a prototype topological defect, are ubiquitous and they significantly alter the topologically protected domains and their behaviors. Herein, combining electron microscopy experiment and graph theory analysis, we report a systematic study of the connections and configurations of domains in this dislocation embedded system. Rules for domain arrangement are established. The dividing line between domains, which can be attributed by the strain field of dislocations, is accurately described by a genus model from a higher dimension in the graph theory. Our results open a door for the understanding of domain patterns in topologically protected multiferroic systems.

Effect of Al and Ti substitution on the structural and magnetotransport properties of Lanthanum-Strontium manganite

NASA Astrophysics Data System (ADS)

Jadav, G. D.; Kanjariya, P. V.; Chavda, S. K.; Bhalodia, J. A.

2018-05-01

Manganite systems have been of considerable interest in the recent past due to their potential to operate in wide property range and also to serve as effective magnetic sensing and storing devices. We report a novel hybrid method, by which La0.7Sr0.3Mn1-xAxO3 (A = Al and Ti, x = 0.00 and 0.06) samples were synthesized at temperature 1100 °C. La0.7Sr0.3MnO3 was selected as a parent material because it has metal to insulator transition near to room temperature. The XRD confirms that all the samples were in single phase (with no detectable secondary phases) having a rhombohedral structure in hexagonal lattice having a space group R3¯c. Unit cell volume is affected by Al+3 and Ti+4 ions and this structural variation slows down the electron transfer through the Mn+3-O-2-Mn+4 network seriously. EDAX analysis shows that the weight percentage of prepared samples matches with the calculated weight percentage of all the samples. Scanning electron microscopy shows that each sample has fine and clear grain boundaries (GBs). Metal-insulator transition (TMI) was increased from 230 K to 275 K in Ti+4 doped sample while TMI remain unchanged in Al+3 substituted sample under the 8 T applied magnetic field. As a positive effect, enhancement in MR % was observed at room temperature. These results prove that Al and Ti substitution at Mn site enhances the various properties of this manganite system. These properties are important for application point of view.

Tunnel magnetoresistance and linear conductance of double quantum dots strongly coupled to ferromagnetic leads

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weymann, Ireneusz, E-mail: weymann@amu.edu.pl

2015-05-07

We analyze the spin-dependent linear-response transport properties of double quantum dots strongly coupled to external ferromagnetic leads. By using the numerical renormalization group method, we determine the dependence of the linear conductance and tunnel magnetoresistance on the degree of spin polarization of the leads and the position of the double dot levels. We focus on the transport regime where the system exhibits the SU(4) Kondo effect. It is shown that the presence of ferromagnets generally leads the suppression of the linear conductance due to the presence of an exchange field. Moreover, the exchange field gives rise to a transition frommore » the SU(4) to the orbital SU(2) Kondo effect. We also analyze the dependence of the tunnel magnetoresistance on the double dot levels' positions and show that it exhibits a very nontrivial behavior.« less

Positive magnetoresistance in Fe3Se4 nanowires

NASA Astrophysics Data System (ADS)

Li, D.; Jiang, J. J.; Liu, W.; Zhang, Z. D.

2011-04-01

We report the magnetotransport properties of Fe3Se4 nanowire arrays in anodic aluminum oxide (AAO) porous membrane. The temperature dependence of resistance of Fe3Se4 nanowires at a zero field shows thermal activated behavior below 295 K. The exponential relationship in resistance is consistent with the model of strong localization with variable-range hopping (VRH) for a finite one-dimensional wire. Resistance versus magnetic field curves below 100 K show small positive magnetoresistance (MR). The field dependencies of log[R(H)/R(0)] explain the positive MR as the effect of magnetic field on the VRH conduction.

Effect of gadolinium dopant on structural, magneto-transport, magnetic and thermo-power of Pr0.8Sr0.2MnO3

NASA Astrophysics Data System (ADS)

Poojary, Thrapthi; Babu, P. D.; Sanil, Tejaswini; Daivajna, Mamatha D.

2018-07-01

In the present investigation structural, magneto-transport, magnetic and thermo-power measurements of Gadolinium (Gd) doped Pr0.8-xGdxSr0.2MnO3 (0, 0.2, 0.25 and 0.3) manganites have been done. All the samples are single phased with orthorhombic structure. Temperature variation of resistance exhibits a high temperature transition occurring at 156 K and a low temperature cusp at around 95 K for pristine sample. With Gd doping resistance behavior shows insulating behavior throughout the whole temperature range. Magneto-Resistance (MR%) increases with Gd doping. A huge increase in thermo-electric power is observed with Gd doping.

Tunneling magnetoresistance tuned by a vertical electric field in an AA-stacked graphene bilayer with double magnetic barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Dali, E-mail: wangdali@mail.ahnu.edu.cn; National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093; Jin, Guojun, E-mail: gjin@nju.edu.cn

2013-12-21

We investigate the effect of a vertical electric field on the electron tunneling and magnetoresistance in an AA-stacked graphene bilayer modulated by the double magnetic barriers with parallel or antiparallel configuration. The results show that the electronic transmission properties in the system are sensitive to the magnetic-barrier configuration and the bias voltage between the graphene layers. In particular, it is found that for the antiparallel configuration, within the low energy region, the blocking effect is more obvious compared with the case for the parallel configuration, and even there may exist a transmission spectrum gap which can be arbitrarily tuned bymore » the field-induced interlayer bias voltage. We also demonstrate that the significant discrepancy between the conductance for both parallel and antiparallel configurations would result in a giant tunneling magnetoresistance ratio, and further the maximal magnetoresistance ratio can be strongly modified by the interlayer bias voltage. This leads to the possible realization of high-quality magnetic sensors controlled by a vertical electric field in the AA-stacked graphene bilayer.« less

Successive Magnetic-Field-Induced Transitions and Colossal Magnetoelectric Effect in Ni 3 TeO 6

DOE PAGES

Kim, Jae Wook; Artyukhin, Sergei; Mun, Eun Deok; ...

2015-09-24

In this paper, we report the discovery of a metamagnetic phase transition in a polar antiferromagnet Ni 3TeO 6 that occurs at 52 T. The new phase transition accompanies a colossal magnetoelectric effect, with a magnetic-field-induced polarization change of 0.3 μC/cm 2, a value that is 4 times larger than for the spin-flop transition at 9 T in the same material, and also comparable to the largest magnetically induced polarization changes observed to date. Via density-functional calculations we construct a full microscopic model that describes the data. We model the spin structures in all fields and clarify the physics behindmore » the 52 T transition. The high-field transition involves a competition between multiple different exchange interactions which drives the polarization change through the exchange-striction mechanism. Finally, the resultant spin structure is rather counterintuitive and complex, thus providing new insights on design principles for materials with strong magnetoelectric coupling.« less

Negative to positive crossover of the magnetoresistance in layered WS{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yangwei; Ning, Honglie; Li, Yanan

2016-04-11

The discovery of graphene ignited intensive investigation of two-dimensional materials. A typical two-dimensional material, transition metal dichalcogenide (TMDC), attracts much attention because of its excellent performance in field effect transistor measurements and applications. Particularly, when TMDC reaches the dimension of a few layers, a wide range of electronic and optical properties can be detected that are in striking contrast to bulk samples. In this letter, we synthesized WS{sub 2} single-crystal nanoflakes using physical vapor deposition and carried out a series of measurements of the contact resistance and magnetoresistance. Focused ion beam (FIB) technology was applied to deposit Pt electrodes onmore » the WS{sub 2} flakes, and the FIB-deposited contacts exhibited linear electrical characteristics. Resistance versus temperature measurements showed similar Mott variable range hopping behavior in different magnetic fields. Additionally, a temperature-modulated negative-to-positive magnetoresistance transition was observed. Our work reveals the magnetotransport characteristics of WS{sub 2} flakes, which may stimulate further studies of the properties of TMDC and its corresponding electronic and optoelectronic applications.« less

Electronic structure and low temperature magnetoresistance of polycrystalline TlMQ2 (M = Sc, Bi, Q = Se, Te)

NASA Astrophysics Data System (ADS)

Aswathy, Vijayakumar Sajitha; Varma, Manoj Raama; Sankar, Cheriyedath Raj

2018-05-01

Thallium based ternary chalcogenide TlBiSe2 having α-NaFeO2 structure type is a candidate of 3D topological insulator family with very large positive linear magnetoresistance. Herein, we report the magnetoresistance studies along with the electronic structure of TlScQ2 (Q = Se, Te) system of the same structure type. Our calculations predict selenide to be a narrow indirect band-gap semiconductor whereas telluride is metallic with intriguing band dispersion characteristics. We observed huge positive MR for the polycrystalline TlBiSe2 and comparatively low MR for TlScQ2 which limits their chance to possess nontrivial surface states.

Direct and real time probe of photoinduced structure transition in colossal magnetoresistive material

DOE PAGES

Li, Junjie; Wang, Xuan; Zhou, Haidong; ...

2016-07-29

Here, we report a direct and real time measurement of photoinduced structure phase transition in single crystal La 0.84Sr 0.16MnO 3 using femtosecond electron diffraction. The melting of orthorhombic lattice ordering under femtosecond optical excitation is found involving two distinct processes with different time scales, an initial fast melting of orthorhombic phase in about 4 ps and a subsequent slower transformation in 90 ps and longer timescales. Furthermore, the fast process is designated as the initial melting of orthorhombic phase induced by the Mn-O bond change that is most likely driven by the quenching of the dynamic Jahn-Teller distortion followingmore » the photo-excitation. We attribute the slow process to the growing of newly formed structure domain from the photo-excited sites to the neighboring non-excited orthorhombic sites.« less

Low-field magnetoresistance up to 400 K in double perovskite Sr{sub 2}FeMoO{sub 6} synthesized by a citrate route

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harnagea, L., E-mail: harnagealuminita@gmail.com; Jurca, B.; Physical Chemistry Department, University of Bucharest, 4-12 Bd. Elisabeta, 030018 Bucharest

2014-03-15

A wet-chemistry technique, namely the citrate route, has been used to prepare high-quality polycrystalline samples of double perovskite Sr{sub 2}FeMoO{sub 6}. We report on the evolution of magnetic and magnetoresistive properties of the synthesized samples as a function of three parameters (i) the pH of the starting solution, (ii) the decomposition temperature of the citrate precursors and (iii) the sintering conditions. The low-field magnetoresistance (LFMR) value of our best samples is as high as 5% at room temperature for an applied magnetic field of 1 kOe. Additionally, the distinguishing feature of these samples is the persistence of LFMR, with amore » reasonably large value, up to 400 K which is a crucial parameter for any practical application. Our study indicates that the enhancement of LFMR observed is due to a good compromise between the grain size distribution and their magnetic polarization. -- Graphical abstract: The microstructure (left panel) and corresponding low-field magnetoresistance of one of the Sr{sub 2}FeMoO{sub 6} samples synthesized in the course of this work. Highlights: • Samples of Sr{sub 2}FeMoO{sub 6} are prepared using a citrate route under varying conditions. • Magnetoresistive properties are improved and optimized. • Low-field magnetoresitence values as large as 5% at 300 K/1 kOe are reported. • Persistence of low-field magnetoresistance up to 400 K.« less

Large magnetoresistance ratio of 10% by Fe50Co50 layers for current-confined-path current-perpendicular-to-plane giant magnetoresistance spin-valve films

NASA Astrophysics Data System (ADS)

Fukuzawa, Hideaki; Yuasa, Hiromi; Hashimoto, Susumu; Iwasaki, Hitoshi; Tanaka, Yoichiro

2005-08-01

We have realized a large magnetoresistance (MR) ratio of 10.2% by current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin-valve films having current-confined-path (CCP) structure formed by AlCu-NOL (nano-oxide-layer). CPP-GMR with conventional Co90Fe10 pinned and free layers showed an MR ratio and a ΔRA (the change of resistance area product) were 4% and 20mΩμm2, respectively, at a small RA (resistance area product) of 500mΩμm2. By replacing the Co90Fe10 layers by Fe50Co50 layers both for pinned and free layers, we have successfully realized a MR ratio and a ΔRA of 7.5% and 37.5mΩμm2, respectively, at a small RA of 500mΩμm2. Moreover, a large MR ratio of 10.2% and a large ΔRA of 418mΩμm2 were realized at a relatively large RA of 4100mΩμm2. This large MR ratio by using Fe50Co50 layers was due to a larger spin-dependent interface scattering factor γ of 0.72 for the interface between Fe50Co50 and Cu, which was improved from a γ of 0.62 for the interface between Co90Fe10 and Cu.

High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Di-Cheng; Pan, You-Wei; Lin, Shih-Wei

2016-04-25

We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3% and a sensitivity of 488.1 Ω/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications.

Domain configurations in dislocations embedded hexagonal manganite systems: From the view of graph theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Shaobo; Zhang, Dong; Deng, Shiqing

Topological defects and their interactions often arouse multiple types of emerging phenomena from edge states in Skyrmions to disclination pairs in liquid crystals. In hexagonal manganites, partial edge dislocations, a prototype topological defect, are ubiquitous and they significantly alter the topologically protected domains and their behaviors. In this work, combining electron microscopy experiment and graph theory analysis, we report a systematic study of the connections and configurations of domains in this dislocation embedded system. Rules for domain arrangement are established. The dividing line between domains, which can be attributed by the strain field of dislocations, is accurately described by amore » genus model from a higher dimension in the graph theory. In conclusion, our results open a door for the understanding of domain patterns in topologically protected multiferroic systems.« less

Domain configurations in dislocations embedded hexagonal manganite systems: From the view of graph theory

DOE PAGES

Cheng, Shaobo; Zhang, Dong; Deng, Shiqing; ...

2018-04-19

Topological defects and their interactions often arouse multiple types of emerging phenomena from edge states in Skyrmions to disclination pairs in liquid crystals. In hexagonal manganites, partial edge dislocations, a prototype topological defect, are ubiquitous and they significantly alter the topologically protected domains and their behaviors. In this work, combining electron microscopy experiment and graph theory analysis, we report a systematic study of the connections and configurations of domains in this dislocation embedded system. Rules for domain arrangement are established. The dividing line between domains, which can be attributed by the strain field of dislocations, is accurately described by amore » genus model from a higher dimension in the graph theory. In conclusion, our results open a door for the understanding of domain patterns in topologically protected multiferroic systems.« less

Voltage-Controlled On/Off Switching of Ferromagnetism in Manganite Supercapacitors.

PubMed

Molinari, Alan; Hahn, Horst; Kruk, Robert

2018-01-01

The ever-growing technological demand for more advanced microelectronic and spintronic devices keeps catalyzing the idea of controlling magnetism with an electric field. Although voltage-driven on/off switching of magnetization is already established in some magnetoelectric (ME) systems, often the coupling between magnetic and electric order parameters lacks an adequate reversibility, energy efficiency, working temperature, or switching speed. Here, the ME performance of a manganite supercapacitor composed of a ferromagnetic, spin-polarized ultrathin film of La 0.74 Sr 0.26 MnO 3 (LSMO) electrically charged with an ionic liquid electrolyte is investigated. Fully reversible, rapid, on/off switching of ferromagnetism in LSMO is demonstrated in combination with a shift in Curie temperature of up to 26 K and a giant ME coupling coefficient of ≈226 Oe V -1 . The application of voltages of only ≈2 V results in ultralow energy consumptions of about 90 µJ cm -2 . This work provides a step forward toward low-power, high-endurance electrical switching of magnetism for the development of high-performance ME spintronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Lanthanum manganite-based air electrode for solid oxide fuel cells

DOEpatents

Ruka, R.J.; Kuo, L.; Li, B.

1999-06-29

An air electrode material for a solid oxide fuel cell is disclosed. The electrode material is based on lanthanum manganite having a perovskite-like crystal structure ABO[sub 3]. The A-site of the air electrode material preferably comprises La, Ca, Ce and at least one lanthanide selected from Sm, Gd, Dy, Er, Y and Nd. The B-site of the electrode material comprises Mn with substantially no dopants. The ratio of A:B is preferably slightly above 1. A preferred air electrode composition is of the formula La[sub w]Ca[sub x]Ln[sub y]Ce[sub z]MnO[sub 3], wherein Ln comprises at least one lanthanide selected from Sm, Gd, Dy, Er, Y and Nd, w is from about 0.55 to about 0.56, x is from about 0.255 to about 0.265, y is from about 0.175 to about 0.185, and z is from about 0.005 to about 0.02. The air electrode material possesses advantageous chemical and electrical properties as well as favorable thermal expansion and thermal cycle shrinkage characteristics. 10 figs.

Towards a magnetoresistive platform for neural signal recording

NASA Astrophysics Data System (ADS)

Sharma, P. P.; Gervasoni, G.; Albisetti, E.; D'Ercoli, F.; Monticelli, M.; Moretti, D.; Forte, N.; Rocchi, A.; Ferrari, G.; Baldelli, P.; Sampietro, M.; Benfenati, F.; Bertacco, R.; Petti, D.

2017-05-01

A promising strategy to get deeper insight on brain functionalities relies on the investigation of neural activities at the cellular and sub-cellular level. In this framework, methods for recording neuron electrical activity have gained interest over the years. Main technological challenges are associated to finding highly sensitive detection schemes, providing considerable spatial and temporal resolution. Moreover, the possibility to perform non-invasive assays would constitute a noteworthy benefit. In this work, we present a magnetoresistive platform for the detection of the action potential propagation in neural cells. Such platform allows, in perspective, the in vitro recording of neural signals arising from single neurons, neural networks and brain slices.

Tunneling magnetoresistance sensors with different coupled free layers

NASA Astrophysics Data System (ADS)

Liu, Yen-Fu; Yin, Xiaolu; Yang, Yi; Ewing, Dan; De Rego, Paul J.; Liou, Sy-Hwang

2017-05-01

Large differences of magnetic coercivity (HC), exchange coupling field (HE), and tunneling magnetoresistance ratio (TMR) in magnetic tunnel junctions with different coupled free layers are discussed. We demonstrate that the magnetization behavior of the free layer is not only dominated by the interfacial barrier layer but also affected largely by the magnetic or non-magnetic coupled free layers. All these parameters are sensitively controlled by the magnetic nanostructure, which can be tuned also by the magnetic annealing process. The optimized sensors exhibit a large field sensitivity of up to 261%/mT in the region of the reversal synthetic ferrimagnet at the pinned layers.

Simultaneous observation of up/down conversion photoluminescence and colossal permittivity properties in (Er+Nb) co-doped TiO2 materials

NASA Astrophysics Data System (ADS)

Tse, Mei-Yan; Tsang, Ming-Kiu; Wong, Yuen-Ting; Chan, Yi-Lok; Hao, Jianhua

2016-07-01

We have investigated the optical and dielectric properties of rutile TiO2 doped with Nb and Er, i.e., (Er0.5Nb0.5)xTi1-xO2. The up/downconversion photoluminescence was observed in the visible and near-infrared region from the materials under 980 nm laser diode excitation. The upconversion emissions are attributed to the energy transfer between Er ions in the excited states. Moreover, the dielectric measurements indicate that the fabricated materials simultaneously present colossal permittivity properties with relatively low dielectric loss. Our work demonstrates the coexistence of both interesting luminescence and attractive dielectric characteristics in (Er+Nb) co-doped TiO2, showing the potential for multifunctional applications.

Anomalous Hall effect in calcium-doped lanthanum cobaltite and gadolinium

NASA Astrophysics Data System (ADS)

Baily, Scott Alan

The physical origin of the anomalous (proportional to magnetization) Hall effect is not very well understood. While many theories account for a Hall effect proportional to the magnetization of a material, these theories often predict effects significantly smaller than those found in ferromagnetic materials. An even more significant deficiency of the conventional theories is that they predict an anomalous Hall resistivity that is proportional to a power of the resistivity, and in the absence of a metal insulator transition cannot account for the anomalous Hall effect that peaks near TC. Recent models based on a geometric, or Berry, phase have had a great deal of success describing the anomalous Hall effect in double-exchange systems (e.g., lanthanum manganite and chromium dioxide). In gadolinium, as in double-exchange magnets, the exchange interaction is mediated by the conduction electrons and the anomalous Hall effect may therefore resemble that of CrO2 and other metallic double-exchange ferromagnets. Lanthanum cobaltite is similar to manganite in many ways, but a strong double-exchange interaction is not present. Calcium-doped lanthanum cobaltite films were found to have the largest anomalous Hall effect of any ferromagnetic metal. The primary purpose of this study is to gain insight into the origin of the anomalous Hall effect with the hope that these theories can be extended to account for the effect in other materials. The Hall resistivity, magnetoresistance, and magnetization of a Gadolinium single crystal were measured in fields up to 30 T. Cobaltite films were grown via laser ablation and characterized by a variety of techniques. Hall resistivity, magnetoresistance, magnetization, and magnetothermopower of L 1-xCaxCoO3 samples with 0.15 < x < 0.4 were measured in fields up to 7 T. The Gd results suggest that Berry's phase contributes partially to the Hall effect near TC. Berry's phase theories hold promise for explaining the large anomalous Hall effect in

Low temperature resistivity plateau and non-saturating magnetoresistance in Type-II Weyl semimetal WP2

NASA Astrophysics Data System (ADS)

Nagpal, V.; Kumar, P.; Sudesh, Patnaik, S.

2018-04-01

We have studied the resistivity and magnetoresistance (MR) properties of the recently predicted type-II Weyl semimetal WP2. Polycrystalline WP2 is synthesized using solid state reaction and crystallizes in an orthorhombic structure with the Cmc21 spacegroup. The temperature dependent resistivity is enhanced with the application of magnetic field and a resistivity plateau is observed at low temperatures. We find a small dip in resistivity around 30K at 5T field suggesting that there might be a metal-insulator-like transition at higher magnetic fields. A non-saturating magnetoresistance is observed at low temperatures with maximum MR ˜ 94% at 2K and 6T. The value of MR decreases with the increase in temperature. We see a deviation from Kohler's power law which implies that the system comprises of two types of charge carriers.

Dynamic conductivity from audio to optical frequencies of semiconducting manganites approaching the metal-insulator transition

NASA Astrophysics Data System (ADS)

Lunkenheimer, P.; Mayr, F.; Loidl, A.

2006-07-01

We report the frequency-dependent conductivity of the manganite system La1-xSrxMnO3 (x0.2) when approaching the metal-insulator transition from the insulating side. Results from low-frequency dielectric measurements are combined with spectra in the infrared region. For low doping levels the behavior is dominated by hopping transport of localized charge carriers at low frequencies and by phononic and electronic excitations in the infrared region. For the higher Sr contents the approach of the metallic state is accompanied by the successive suppression of the hopping contribution at low frequencies and by the development of polaronic excitations in the infrared region, which finally become superimposed by a strong Drude contribution in the fully metallic state.

Evidence of Photo-induced Dynamic Competition of Metallic and Insulating Phase in a Layered Manganite.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yuelin; Walko, Donald A.; Li, Qing'an

2015-12-16

We show evidence that the competition between the antiferromagetic metallic phase and the charge- and orbital-ordered insulating phase at the reentrant phase boundary of a layered manganite, LaSr2Mn2O7, can be manipulated using ultrafast optical excitation. The time- dependent evolution of the Jahn-Teller superlattice reflection, which indicates the formation of the charge and orbital order, was measured at different laser fluences. The laser-induced enhancement and reduction the Jahn-Teller reflection intensity shows a reversal of sign between earlier (~10 ns) and later (~150 ns) time delays during the relaxation after photo excitation. This effect is consistent with a scenario whereby the lasermore » excitation modulates the local competition between the metallic and the insulating phases.« less

Evidence of photo-induced dynamic competition of metallic and insulating phase in a layered manganite

DOE PAGES

Li, Yuelin; Walko, Daonld A.; Li, Qing'an; ...

2015-11-17

We show evidence that the competition between the antiferromagetic metallic phase and the charge- and orbital-ordered insulating phase at the reentrant phase boundary of a layered manganite, LaSr 2Mn 2O 7, can be manipulated using ultrafast optical excitation. The time-dependent evolution of the Jahn-Teller superlattice reflection, which indicates the formation of the charge and orbital order, was measured at different laser fluences. The laser-induced enhancement and reduction the Jahn-Teller reflection intensity shows a reversal of sign between earlier (~10 ns) and later (~150 ns) time delays during the relaxation after photo excitation. This effect is consistent with a scenario wherebymore » the laser excitation modulates the local competition between the metallic and the insulating phases.« less

Magnetoresistance in the superconducting state at the (111) LaAlO3/SrTiO3 interface

NASA Astrophysics Data System (ADS)

Davis, S.; Huang, Z.; Han, K.; Ariando, Venkatesan, T.; Chandrasekhar, V.

2017-10-01

Condensed-matter systems that simultaneously exhibit superconductivity and ferromagnetism are rare due the antagonistic relationship between conventional spin-singlet superconductivity and ferromagnetic order. In materials in which superconductivity and magnetic order are known to coexist (such as some heavy-fermion materials), the superconductivity is thought to be of an unconventional nature. Recently, the conducting gas that lives at the interface between the perovskite band insulators LaAlO3 (LAO) and SrTiO3 (STO) has also been shown to host both superconductivity and magnetism. Most previous research has focused on LAO/STO samples in which the interface is on the (001) crystal plane. Relatively little work has focused on the (111) crystal orientation, which has hexagonal symmetry at the interface, and has been predicted to have potentially interesting topological properties, including unconventional superconducting pairing states. Here we report measurements of the magnetoresistance of (111) LAO/STO heterostructures at temperatures at which they are also superconducting. As with the (001) structures, the magnetoresistance is hysteretic, indicating the coexistence of magnetism and superconductivity, but in addition, we find that this magnetoresistance is anisotropic. Such an anisotropic response is completely unexpected in the superconducting state and suggests that (111) LAO/STO heterostructures may support unconventional superconductivity.

Tilted Dirac Cone Effect on Interlayer Magnetoresistance in α-(BEDT-TTF)2I3

NASA Astrophysics Data System (ADS)

Tajima, Naoya; Morinari, Takao

2018-04-01

We report the effect of Dirac cone tilting on interlayer magnetoresistance in α-(BEDT-TTF)2I3, which is a Dirac semimetal under pressure. Fitting of the experimental data by the theoretical formula suggests that the system is close to a type-II Dirac semimetal.

Magnetoresistance and noise properties of chevron stretcher detectors for field access bubble domain devices

NASA Technical Reports Server (NTRS)

George, P. K.; Oeffinger, T. R.; Chen, T. T.

1976-01-01

Experiments were devised to study the angular variation of the resistance and noise properties of one- and two-level chevron stretcher magnetoresistive detectors for use in field access bubble memory devices. All measurements, made with an electronic system, were performed on glass or garnet samples upon which 1 micron of SiO2 was sputter-deposited, followed by 4000 A of Permalloy for the 28-micron-period devices and 0.8 microns of SiO2, followed by 3000 A of Permalloy for the 20-micron-period devices. The geometrical and drive-state dependence of the zero-state noise were studied, as was its frequency dependence. It is found that both types of detectors operate primarily in the amplitude-shift mode for drive fields of interest and that the presence of a bubble in a detector causes a magnetoresistance change equal to that produced by increasing the in-plane drive field about 8 Oe in the absence of a bubble.

Spin-orbit interaction and negative magnetoresistance for localized electrons in InSb quantum wells

NASA Astrophysics Data System (ADS)

Ishida, S.; Manago, T.; Nishizako, N.; Geka, H.; Shibasaki, I.

2010-02-01

Weak-field magnetoresistance (MR) in the variable-range hopping (VRH) in the presence of spin-orbit interaction (SOI) for 2DEGs at the hetero-interface of InSb quantum wells was examined in view of the quantum interference (QI) effect. Samples with the sheet resistance, ρ> ρc= h/ e2, exhibit VRH, while those with ρ< ρc exhibit weak localiz ation (WL) at low temperatures, where h/ e2 is the quantum resistance. In the WL regime, a positive magnetoresistance (MR) peak due to the weak anti-localization (WAL) with SOI is clearly observed in low magnetic field. In contrast, the low-field hopping MR remains entirely negative surviving the SOI, indicating that the hopping MR due to the QI is completely negative regardless of the SOI. This result supports the predictions based on the directed-path approach for forward-scattering paths ignoring the back-scattering return loops for the QI in the VRH.

Asymmetrical external effects on transmission, conductance and giant tunneling magnetoresistance in silicene

NASA Astrophysics Data System (ADS)

Oubram, O.; Navarro, O.; Guzmán, E. J.; Rodríguez-Vargas, I.

2018-01-01

Electron transport in a silicene structure, composed of a pair of magnetic gates, is studied in a ferromagnetic and antiferromagnetic configuration. The transport properties are investigated for asymmetrical external effects like an electrostatic potential, a magnetic field and for asymmetrical geometric structure. This theoretical study, has been done using the matrix transfer method to calculate the transmission, the conductance for parallel and antiparallel magnetic alignment and the tunneling magnetoresistance (TMR). In Particular, we have found that the transmission, conductance and magnetoresistance oscillate as a function of the width of barriers. It is also found that a best control and high values of TMR spectrum are achieved by an asymmetrical application of the contact voltage. Besides, we have shown that the TMR is enhanced several orders of magnitude by the combined asymmetrical magnetization effect with an adequate applied electrostatic potential. Whereby, the asymmetrical external effects play an important role to improve TMR than symmetrical ones. Finally, the giant TMR can be flexibly modulated by incident energy and a specific asymmetrical application of control voltage. These results could be useful to design filters and digital nanodevices.

Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization

NASA Astrophysics Data System (ADS)

Zare, Moslem; Majidi, Leyla; Asgari, Reza

2017-03-01

We theoretically investigate the unusual features of the magnetotransport in a monolayer phosphorene ferromagnetic/normal/ferromagnetic (F/N/F) hybrid structure. We find that the charge conductance can feature a minimum at parallel (P) configuration and a maximum near the antiparallel (AP) configuration of magnetization in the F/N/F structure with n -doped F and p -doped N regions and also a finite conductance in the AP configuration with the N region of n -type doping. In particular, the proposed structure exhibits giant magnetoresistance, which can be tuned to unity. This perfect switching is found to show strong robustness with respect to increasing the contact length and tuning the chemical potential of the N region with a gate voltage. We also explore the oscillatory behavior of the charge conductance or magnetoresistance in terms of the size of the N region. We further demonstrate the penetration of the spin-transfer torque into the right F region and show that, unlike graphene structure, the spin-transfer torque is very sensitive to the chemical potential of the N region as well as the exchange field of the F region.

Realisation of all 16 Boolean logic functions in a single magnetoresistance memory cell.

PubMed

Gao, Shuang; Yang, Guang; Cui, Bin; Wang, Shouguo; Zeng, Fei; Song, Cheng; Pan, Feng

2016-07-07

Stateful logic circuits based on next-generation nonvolatile memories, such as magnetoresistance random access memory (MRAM), promise to break the long-standing von Neumann bottleneck in state-of-the-art data processing devices. For the successful commercialisation of stateful logic circuits, a critical step is realizing the best use of a single memory cell to perform logic functions. In this work, we propose a method for implementing all 16 Boolean logic functions in a single MRAM cell, namely a magnetoresistance (MR) unit. Based on our experimental results, we conclude that this method is applicable to any MR unit with a double-hump-like hysteresis loop, especially pseudo-spin-valve magnetic tunnel junctions with a high MR ratio. Moreover, after simply reversing the correspondence between voltage signals and output logic values, this method could also be applicable to any MR unit with a double-pit-like hysteresis loop. These results may provide a helpful solution for the final commercialisation of MRAM-based stateful logic circuits in the near future.

The tunnel magnetoresistance in chains of quantum dots weakly coupled to external leads.

PubMed

Weymann, Ireneusz

2010-01-13

We analyze numerically the spin-dependent transport through coherent chains of three coupled quantum dots weakly connected to external magnetic leads. In particular, using the diagrammatic technique on the Keldysh contour, we calculate the conductance, shot noise and tunnel magnetoresistance (TMR) in the sequential and cotunneling regimes. We show that transport characteristics greatly depend on the strength of the interdot Coulomb correlations, which determines the spatial distribution of the electron wavefunction in the chain. When the correlations are relatively strong, depending on the transport regime, we find both negative TMR as well as TMR enhanced above the Julliere value, accompanied with negative differential conductance (NDC) and super-Poissonian shot noise. This nontrivial behavior of tunnel magnetoresistance is associated with selection rules that govern tunneling processes and various high-spin states of the chain that are relevant for transport. For weak interdot correlations, on the other hand, the TMR is always positive and not larger than the Julliere TMR, although super-Poissonian shot noise and NDC can still be observed.

Evolution of the linear-polarization-angle-dependence of the radiation-induced magnetoresistance-oscillations with microwave power

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ye, Tianyu; Mani, R. G.; Wegscheider, W.

2014-11-10

We examine the role of the microwave power in the linear polarization angle dependence of the microwave radiation induced magnetoresistance oscillations observed in the high mobility GaAs/AlGaAs two dimensional electron system. The diagonal resistance R{sub xx} was measured at the fixed magnetic fields of the photo-excited oscillatory extrema of R{sub xx} as a function of both the microwave power, P, and the linear polarization angle, θ. Color contour plots of such measurements demonstrate the evolution of the lineshape of R{sub xx} versus θ with increasing microwave power. We report that the non-linear power dependence of the amplitude of the radiation-inducedmore » magnetoresistance oscillations distorts the cosine-square relation between R{sub xx} and θ at high power.« less

Magnetocardiography with sensors based on giant magnetoresistance

NASA Astrophysics Data System (ADS)

Pannetier-Lecoeur, M.; Parkkonen, L.; Sergeeva-Chollet, N.; Polovy, H.; Fermon, C.; Fowley, C.

2011-04-01

Biomagnetic signals, mostly due to the electrical activity in the body, are very weak and they can only be detected by the most sensitive magnetometers, such as Superconducting Quantum Interference Devices (SQUIDs). We report here biomagnetic recordings with hybrid sensors based on Giant MagnetoResistance (GMR). We recorded magnetic signatures of the electric activity of the human heart (magnetocardiography) in healthy volunteers. The P-wave and QRS complex, known from the corresponding electric recordings, are clearly visible in the recordings after an averaging time of about 1 min. Multiple recordings at different locations over the chest yielded a dipolar magnetic field map and allowed localizing the underlying current sources. The sensitivity of the GMR-based sensors is now approaching that of SQUIDs and paves way for spin electronics devices for functional imaging of the body.

Intrinsic dielectric properties of magnetodielectric La2CoMnO6

NASA Astrophysics Data System (ADS)

Silva, R. X.; Moreira, R. L.; Almeida, R. M.; Paniago, R.; Paschoal, C. W. A.

2015-06-01

Manganite with a double perovskite structure is an attractive material because of its interesting magnetoelectric and dielectric responses. In particular, colossal dielectric constant (CDC) behavior has been observed in La2CoMnO6 (LCMO) at radio frequencies and at room temperature. In this paper, we used infrared-reflectivity spectroscopy to study a LCMO ceramic obtained through a modified Pechini's method to determine the phonon contribution to the intrinsic dielectric response of the system and to investigate the CDC origin. The analysis of the main polar modes and of the obtained phonon parameters indicate that the CDC effect of LCMO is of pure extrinsic origin. In addition, we estimated the dielectric constant and the quality factor of the material in the microwave region to be ɛ's ˜ 16 and Qu × f ˜ 124 THz, which verifies that LCMO is appropriate for application in microwave devices and circuitry.

Extreme magnetoresistance and SdH oscillation in compensated semimetals of NbSb2 single crystals

NASA Astrophysics Data System (ADS)

Guo, Lei; Liu, Yu-Kuai; Gao, Guan-Yin; Huang, Ye-Yu; Gao, Heng; Chen, Lei; Zhao, Weiyao; Ren, Wei; Li, Shi-Yan; Li, Xiao-Guang; Dong, Shuai; Zheng, Ren-Kui

2018-04-01

Topological semimetals represent one of the most interesting classes of materials that continue to attract worldwide interest. Here, we report magnetotransport properties of MPn2-type (M = Nb, Ta; Pn = P, As, Sb) NbSb2 single-crystal semimetals with a centrosymmetric C12/m1 space group, paramagnetic ground state, and non-saturation parabolic-like magnetoresistance. The NbSb2 crystals show metallic conductivity down to 2 K and undergo a metal-to-insulator-like transition under a magnetic field B (B ≥ 4 T) and exhibit a resistivity plateau in the low-temperature region (T ≤ 10 K), where the value of resistivity strongly depends on the magnitude and direction of the magnetic field. Upon sweeping the magnetic field from 0 to 14.5 T in the transverse configuration at T = 1.5 K, the NbSb2 crystal shows a large positive magnetoresistance (4.2 × 103% at B = 14.5 T) with Shubnikov-de Haas (SdH) oscillation. Hall measurements reveal that both the carrier compensation between electrons and holes and the high mobility and large mean free path of carriers contribute to the large magnetoresistance. Fast Fourier transform analyses of angle-resolved SdH oscillation indicate that the Fermi surface of the NbSb2 crystal is quasi-two-dimensional with three-dimensional components. These findings, together with the theoretically calculated electronic band structure obtained within the framework of density functional theory, suggest that NbSb2 is a good candidate compensated semimetal for further theoretical and experimental investigation of this family of materials.

Electron localization and magnetism in SrRuO3 with non-magnetic cation substitution

NASA Astrophysics Data System (ADS)

Tong, W.; Huang, F.-Q.; Chen, I.-W.

2011-03-01

The destruction of the ferromagnetism of alloyed SrRuO3 can be caused by electron localization at the substitution sites. Among all the non-magnetic cations that enter the B site, Zr4 + is the least disruptive to conductivity and ferromagnetism. This is because Zr4 + does not cause any charge disorder, and its empty d electron states which are poorly matched in energy with the Ru t2g4 states cause the least resonance scattering of Ru's d electrons. Conducting Sr(Ru, Zr)O3 may be used as an electrode for perovskite-based thin film devices, while its insulating counterpart provides unprecedented magnetoresistance, seldom seen in other non-manganite and non-cobaltite perovskites.

Strain-controlled electronic properties and magnetorelaxor behaviors in electron-doped CaMnO3 thin films

NASA Astrophysics Data System (ADS)

Xiang, P.-H.; Yamada, H.; Sawa, A.; Akoh, H.

2009-02-01

We have fabricated epitaxial thin films of electron-doped manganite Ca1-xCexMnO3 (CCMO) with 0≤x≤0.08. The transport properties of CCMO films are very sensitive to substrate-controlled epitaxial strain. For the CCMO(x =0.05) film, the metallic transport characteristic is observed only on a nearly lattice-matched NdAlO3 (NAO) substrate, while tensilely and compressively stressed films are insulating. The CCMO(x =0.06) film on the NAO substrate shows a large magnetoresistance characteristic of a magnetorelaxor. This behavior can be explained in terms of the phase separation and the irreversible growth of the metallic domain in antiferromagnetic insulating matrix.

Strain coupling in multiferroic phase transitions of samarium yttrium manganite Sm0.6Y0.4MnO3

NASA Astrophysics Data System (ADS)

Schiemer, Jason; O'Flynn, Daniel; Balakrishnan, Geetha; Carpenter, Michael A.

2013-08-01

Sm1-xYxMnO3 (SYM x) is one of a class of multiferroic manganites that has seen significant recent interest due to the intimate connection between cycloidal magnetic order and ferroelectricity in these materials. SYM shows sequential transitions between paramagnetic, sinusoidally ordered antiferromagnetic and cycloidally ordered antiferromagnetic phases with decreasing temperature. As in the other members of the family, the magnetic spin cycloid induces ferroelectricity, although whether there is any elastic coupling involved in this process is not known. In this work, resonant ultrasound spectroscopy (RUS) is used to examine the stiffness and dissipation in SYM 0.4 as the magnetic transitions are traversed. It is found that there are only very small signatures of the transitions in the elastic properties of the material, indicating the weakness of the magnetoelastic (and electroelastic) coupling. The mechanical loss does show a significant decrease upon cooling below TN1=˜50 K, indicating the freezing of some loss mechanism near the temperature where magnetic order is achieved. The strain at these magnetic transitions in a related material, Eu1-xYxMnO3, is examined from data published in the literature, and very low shear strain is observed, along with a more significant volume strain effect. This correlates well with the observations from RUS, as the peak frequencies are more sensitive to shear effects than bulk effects. These results suggest that the weak coupling of the magnetic transitions with shear may be a more general behavior in multiferroic perovskite-related manganites.

The tight binding model study of the role of anisotropic AFM spin ordering in the charge ordered CMR manganites

NASA Astrophysics Data System (ADS)

Kar, J. K.; Panda, Saswati; Rout, G. C.

2017-05-01

We propose here a tight binding model study of the interplay between charge and spin orderings in the CMR manganites taking anisotropic effect due to electron hoppings and spin exchanges. The Hamiltonian consists of the kinetic energies of eg and t2g electrons of manganese ion. It further includes double exchange and Heisenberg interactions. The charge density wave interaction (CDW) describes an extra mechanism for the insulating character of the system. The CDW gap and spin parameters are calculated using Zubarev's Green's function technique and computed self-consistently. The results are reported in this communication.

Transport properties of high-performance all-Heusler Co2CrSi/Cu2CrAl/Co2CrSi giant magnetoresistance device

NASA Astrophysics Data System (ADS)

Bai, Z. Q.; Lu, Y. H.; Shen, L.; Ko, V.; Han, G. C.; Feng, Y. P.

2012-05-01

Transport properties of giant magnetoresistance (MR) junction consisting of trilayer Co2CrSi/Cu2CrAl/Co2CrSi Heusler alloys (L21) are studied using first-principles approach based on density functional theory and the non-equilibrium Green's function method. Highly conductive channels are found in almost the entire k-plane when the magnetizations of the electrodes are parallel, while they are completely blocked in the antiparallel configuration, which leads to a high magnetoresistance ratio (the pessimistic MR ratio is nearly 100%). Furthermore, the calculated I-V curve shows that the device behaves as a good spin valve with a considerable disparity in currents under the parallel and antiparallel magnetic configurations of the electrodes. The Co2CrSi/Cu2CrAl/Co2CrSi junction could be useful for high-performance all-metallic current-perpendicular-to-plane giant magnetoresistance reading head for the next generation high density magnetic storage.

Structural, magnetic and magnetocaloric properties of EuMnO3 perovskite manganite: A comprehensive MCE study

NASA Astrophysics Data System (ADS)

Phebe Kokila, I.; Kanagaraj, M.; Sathish Kumar, P.; Peter, Sebastian C.; Sekar, C.; Annal Therese, Helen

2018-02-01

Pervoskite manganite EuMnO3 synthesized by solid-state route was studied for their structural and magnetocaloric properties. EuMnO3 formed a single phase compound in orthorhombic crystal structure with a space group of Pbnm. The zero field cooling and field cooling magnetic responses exhibit an optimal Neel temperature (TN) of 57 K. A stronger magnetic coupling between the EuMnO3 particles are observed by a delay in reaching TN. The magnetocaloric effect analyzed extensively from the negative entropy (-ΔSm) change of 15.23 JKg-1K-1 for EuMnO3, exhibited a Relative Cooling Power (RCP) of ˜211 JKg-1 at 1.2 T proposing EuMnO3 as a potential magnetic refrigerant.

Spin Hall magnetoresistance in the non-collinear ferrimagnet GdIG close to the compensation temperature

DOE PAGES

Dong, Bo -Wen; Cramer, Joel; Ganzhorn, Kathrin; ...

2017-12-14

We investigate the spin Hall magnetoresistance (SMR) in a gadolinium iron garnet (GdIG)/platinum (Pt) heterostructure by angular dependent magnetoresistance measurements. The magnetic structure of the ferromagnetic insulator GdIG is non-collinear near the compensation temperature, while it is collinear far from the compensation temperature. In the collinear regime, the SMR signal in GdIG is consistent with the usualmore » $${\\rm si}{{{\\rm n}}^{2}}\\theta $$ relation well established in the collinear magnet yttrium iron garnet, with $$\\theta $$ the angle between magnetization and spin Hall spin polarization direction. In the non-collinear regime, both an SMR signal with inverted sign and a more complex angular dependence with four maxima are observed within one sweep cycle. The number of maxima as well as the relative strength of different maxima depend strongly on temperature and field strength. Lastly, our results evidence a complex SMR behavior in the non-collinear magnetic regime that goes beyond the conventional formalism developed for collinear magnetic structures.« less

Spin Hall magnetoresistance in the non-collinear ferrimagnet GdIG close to the compensation temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Bo -Wen; Cramer, Joel; Ganzhorn, Kathrin

We investigate the spin Hall magnetoresistance (SMR) in a gadolinium iron garnet (GdIG)/platinum (Pt) heterostructure by angular dependent magnetoresistance measurements. The magnetic structure of the ferromagnetic insulator GdIG is non-collinear near the compensation temperature, while it is collinear far from the compensation temperature. In the collinear regime, the SMR signal in GdIG is consistent with the usualmore » $${\\rm si}{{{\\rm n}}^{2}}\\theta $$ relation well established in the collinear magnet yttrium iron garnet, with $$\\theta $$ the angle between magnetization and spin Hall spin polarization direction. In the non-collinear regime, both an SMR signal with inverted sign and a more complex angular dependence with four maxima are observed within one sweep cycle. The number of maxima as well as the relative strength of different maxima depend strongly on temperature and field strength. Lastly, our results evidence a complex SMR behavior in the non-collinear magnetic regime that goes beyond the conventional formalism developed for collinear magnetic structures.« less

Magnon Spin Hall Magnetoresistance of a Gapped Quantum Paramagnet.

PubMed

Ulloa, Camilo; Duine, R A

2018-04-27

Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling between the ferromagnet and the adjacent normal metal. For the strongly interacting magnons that we consider, this spin current gives rise to a spin Hall magnetoresistance that strongly depends on the magnitude of the magnetic field, rather than its direction. This Letter may motivate electrical detection of the phases of quantum magnets and the incorporation of such materials into spintronic devices.

Magnon Spin Hall Magnetoresistance of a Gapped Quantum Paramagnet

NASA Astrophysics Data System (ADS)

Ulloa, Camilo; Duine, R. A.

2018-04-01

Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling between the ferromagnet and the adjacent normal metal. For the strongly interacting magnons that we consider, this spin current gives rise to a spin Hall magnetoresistance that strongly depends on the magnitude of the magnetic field, rather than its direction. This Letter may motivate electrical detection of the phases of quantum magnets and the incorporation of such materials into spintronic devices.

Molecular hyperfine fields in organic magnetoresistance devices

NASA Astrophysics Data System (ADS)

Giro, Ronaldo; Rosselli, Flávia P.; dos Santos Carvalho, Rafael; Capaz, Rodrigo B.; Cremona, Marco; Achete, Carlos A.

2013-03-01

We calculate molecular hyperfine fields in organic magnetoresistance (OMAR) devices using ab initio calculations. To do so, we establish a protocol for the accurate determination of the average hyperfine field Bhf and apply it to selected molecular ions: NPB, TPD, and Alq3. Then, we make devices with precisely the same molecules and perform measurements of the OMAR effect, in order to address the role of hole-transport layer in the characteristic magnetic field B0 of OMAR. Contrary to common belief, we find that molecular hyperfine fields are not only caused by hydrogen nuclei. We also find that dipolar contributions to the hyperfine fields can be comparable to the Fermi contact contributions. However, such contributions are restricted to nuclei located in the same molecular ion as the charge carrier (intramolecular), as extramolecular contributions are negligible.

Influence of the Ar-ion irradiation on the giant magnetoresistance in Fe/Cr multilayers

NASA Astrophysics Data System (ADS)

Kopcewicz, M.; Stobiecki, F.; Jagielski, J.; Szymański, B.; Schmidt, M.; Dubowik, J.; Kalinowska, J.

2003-05-01

The influence of 200 keV Ar-ion irradiation on the interlayer coupling in Fe/Cr multilayers exhibiting the giant magnetoresistance (GMR) effect is studied by the conversion electron Mössbauer spectroscopy (CEMS), vibrating sample magnetometer hysteresis loops, magnetoresistivity, and electric resistivity measurements and supplemented by the small-angle x-ray diffraction. The increase of Ar-ion dose causes an increase of interface roughness, as evidenced by the increase of the Fe step sites detected by CEMS. The modification of microstructure induces changes in magnetization reversal indicating a gradual loss of antiferromagnetic (AF) coupling correlated with the degradation of the GMR effect. Distinctly weaker degradation of AF coupling and the GMR effect observed for irradiated samples with a thicker Cr layer thickness suggest that observed effects are caused by pinholes creation. The measurements of temperature dependence of remanence magnetization confirm increase of pinhole density and sizes during implantation. Other effects which can influence spin dependent contribution to the resistance, such as interface roughness as well as shortening of mean-free path of conduction electrons, are also discussed.

Negative slope of resistivity-temperature curve and positive magnetoresistance in antiperovskite ZnCNi3- x Mn x (1.15≤ x≤1.5)

NASA Astrophysics Data System (ADS)

Shi, Lei; Chu, Songnan; Zhao, Jiyin; Wang, Yang; Guo, Yuqiao; Wang, Cailin

2014-03-01

In antiperovskite intermetallics ZnCNi3- x Mn x , the negative slope coefficient (NSC) d ρ/d T of resistivity-temperature curves is observed when x=1.15,1.25,1.4,1.5. The sample with x=1.25 shows a semiconductor-like behavior in the whole temperature range of 15-290 K. By study of the magnetization, magnetoresistance, and low-temperature X-ray diffraction, it is found that Mn dopant significantly affects the physical properties of ZnCNi3- x Mn x by changing both the carrier density and the magnetism. The origin of the NSC d ρ/d T can be ascribed to the change of hole-like carrier density, which is adjusted by Mn content. The existence of hole-like carriers can be understood rationally by the two-band model. The change of sign of magnetoresistance from positive to negative has been observed in ZnCNi3- x Mn x with the change of Mn content, which could be ascribed to the competition between the contribution from field-induced suppression of the thermally excited ferromagnetic spin fluctuations and the Lorentz contribution. When Mn content is low, the Lorentz contribution dominates the sign of magnetoresistance. On the other hand, when Mn content is high, the contribution from field-induced suppression of the thermally excited ferromagnetic spin fluctuations dominates the sign of magnetoresistance.

Study of spin-ordering and spin-reorientation transitions in hexagonal manganites through Raman spectroscopy

PubMed Central

Chen, Xiang-Bai; Hien, Nguyen Thi Minh; Han, Kiok; Nam, Ji-Yeon; Huyen, Nguyen Thi; Shin, Seong-Il; Wang, Xueyun; Cheong, S. W.; Lee, D.; Noh, T. W.; Sung, N. H.; Cho, B. K.; Yang, In-Sang

2015-01-01

Spin-wave (magnon) scattering, when clearly observed by Raman spectroscopy, can be simple and powerful for studying magnetic phase transitions. In this paper, we present how to observe magnon scattering clearly by Raman spectroscopy, then apply the Raman method to study spin-ordering and spin-reorientation transitions of hexagonal manganite single crystal and thin films and compare directly with the results of magnetization measurements. Our results show that by choosing strong resonance condition and appropriate polarization configuration, magnon scattering can be clearly observed, and the temperature dependence of magnon scattering can be simple and powerful quantity for investigating spin-ordering as well as spin-reorientation transitions. Especially, the Raman method would be very helpful for investigating the weak spin-reorientation transitions by selectively probing the magnons in the Mn3+ sublattices, while leaving out the strong effects of paramagnetic moments of the rare earth ions. PMID:26300075

High density submicron magnetoresistive random access memory (invited)

NASA Astrophysics Data System (ADS)

Tehrani, S.; Chen, E.; Durlam, M.; DeHerrera, M.; Slaughter, J. M.; Shi, J.; Kerszykowski, G.

1999-04-01

Various giant magnetoresistance material structures were patterned and studied for their potential as memory elements. The preferred memory element, based on pseudo-spin valve structures, was designed with two magnetic stacks (NiFeCo/CoFe) of different thickness with Cu as an interlayer. The difference in thickness results in dissimilar switching fields due to the shape anisotropy at deep submicron dimensions. It was found that a lower switching current can be achieved when the bits have a word line that wraps around the bit 1.5 times. Submicron memory elements integrated with complementary metal-oxide-semiconductor (CMOS) transistors maintained their characteristics and no degradation to the CMOS devices was observed. Selectivity between memory elements in high-density arrays was demonstrated.

Magnetoresistive biosensors for quantitative proteomics

NASA Astrophysics Data System (ADS)

Zhou, Xiahan; Huang, Chih-Cheng; Hall, Drew A.

2017-08-01

Quantitative proteomics, as a developing method for study of proteins and identification of diseases, reveals more comprehensive and accurate information of an organism than traditional genomics. A variety of platforms, such as mass spectrometry, optical sensors, electrochemical sensors, magnetic sensors, etc., have been developed for detecting proteins quantitatively. The sandwich immunoassay is widely used as a labeled detection method due to its high specificity and flexibility allowing multiple different types of labels. While optical sensors use enzyme and fluorophore labels to detect proteins with high sensitivity, they often suffer from high background signal and challenges in miniaturization. Magnetic biosensors, including nuclear magnetic resonance sensors, oscillator-based sensors, Hall-effect sensors, and magnetoresistive sensors, use the specific binding events between magnetic nanoparticles (MNPs) and target proteins to measure the analyte concentration. Compared with other biosensing techniques, magnetic sensors take advantage of the intrinsic lack of magnetic signatures in biological samples to achieve high sensitivity and high specificity, and are compatible with semiconductor-based fabrication process to have low-cost and small-size for point-of-care (POC) applications. Although still in the development stage, magnetic biosensing is a promising technique for in-home testing and portable disease monitoring.

Magnetic, electronic, dielectric and optical properties of Pr(Ca:Sr)MnO 3

NASA Astrophysics Data System (ADS)

Sichelschmidt, J.; Paraskevopoulos, M.; Brando, M.; Wehn, R.; Ivannikov, D.; Mayr, F.; Pucher, K.; Hemberger, J.; Pimenov, A.; Krug von Nidda, H.-A.; Lunkenheimer, P.; Ivanov, V. Yu.; Mukhin, A. A.; Balbashov, A. M.; Loidl, A.

2001-03-01

The charge-ordered perovskite Pr0.65Ca0.28Sr0.07MnO3 was investigated by means of magnetic susceptibility, specific heat, dielectric and optical spectroscopy and electron-spin resonance techniques. Under moderate magnetic fields, the charge order melts yielding colossal magnetoresistance effects with changes of the resistivity over eleven orders of magnitude. The optical conductivity is studied from audio frequencies far into the visible spectral regime. Below the phonon modes hopping conductivity is detected. Beyond the phonon modes the optical conductivity is explained by polaronic excitations out of a bound state. ESR techniques yield detailed informations on the (H,T ) phase diagram and reveal a broadening of the linewidth which can be modeled in terms of activated polaron hopping.

Current-induced strong diamagnetism in the Mott insulator Ca2RuO4

NASA Astrophysics Data System (ADS)

Sow, Chanchal; Yonezawa, Shingo; Kitamura, Sota; Oka, Takashi; Kuroki, Kazuhiko; Nakamura, Fumihiko; Maeno, Yoshiteru

2017-11-01

Mott insulators can host a surprisingly diverse set of quantum phenomena when their frozen electrons are perturbed by various stimuli. Superconductivity, metal-insulator transition, and colossal magnetoresistance induced by element substitution, pressure, and magnetic field are prominent examples. Here we report strong diamagnetism in the Mott insulator calcium ruthenate (Ca2RuO4) induced by dc electric current. The application of a current density of merely 1 ampere per centimeter squared induces diamagnetism stronger than that in other nonsuperconducting materials. This change is coincident with changes in the transport properties as the system becomes semimetallic. These findings suggest that dc current may be a means to control the properties of materials in the vicinity of a Mott insulating transition.

Evaluation of the magnetocaloric response of nano-sized La0.7Ca0.3Mn1-xNixO3 manganites synthesized by auto-combustion method

NASA Astrophysics Data System (ADS)

Gómez, Adrián; Chavarriaga, Edgar; Supelano, Iván; Parra, Carlos Arturo; Morán, Oswaldo

2018-05-01

A systematic study of the dependence of the magnetization on the magnetic field around the ferromagnetic-paramagnetic phase transition temperature is carried out on La0.7Ca0.3Mn1-xNixO3 (x=0, 0.02, 0.07, and 1) samples synthesized by auto-combustion method. The successful substitution of Mn3+ ions by Ni2+ ions in the La0.7Ca0.3MnO3 lattice is corroborated by X-ray diffraction technique. Banerjees criteria, Arrott plots, and the scaling hypothesis are used to analyze the experimental data. It is verified that the Ni-doping increases the operating temperature range for magnetocaloric effect through tuning of the magnetic transition temperature. Probably, the replacement of Mn3+ by Ni2+ ions in the La0.7Ca0.3MnO3 lattice weakens the Mn3+-O-Mn4+ double exchange interaction, which leads to a decrease in the transition temperature and magnetic moment in the samples. The Arrott plots suggest that the phase transition from ferromagnetic to paramagnetic in the nano-sized manganite is of second order. The analysis of the magnetization results show that the maximum magnetic entropy changes observed for x=0, 0.02, 0.07, and 0.1 compositions are 0.85, 0.77, 0.63, and 0.59 J/kg K, under a magnetic field of 1.5 T. These values indicate that the magnetic entropy change achieved for La0.7Ca0.3Mn1-xNixO3 manganites synthesized by auto-combustion method is higher than those reported for other manganites with comparable Ni-doping levels but synthesized by standard solid state reaction. It is also observed that the addition of Ni2+ increases the value of the relative cooling power as compared to that of the parent compound. The highest value of this parameter (˜60 J/kg) is found for a Ni-doping level of 2 % around 230 K in a field of 1.5 T.

Unidirectional magnetoresistance in magnetic thin films with non-uniform thickness

NASA Astrophysics Data System (ADS)

Jia, M. W.; Zhou, C.; Zeng, F. L.; Wu, Y. Z.

2018-05-01

The magnetoresistance (MR) of Co film and Co/Pt bilayers was studied systematically as a function of Co and Pt thickness at room temperature. In the samples with the wedge shape, we found the unidirectional MR which has the characteristics of R (Mz )≠R (-Mz ) with the magnetization normal to the film. The measured unidirectional MR is attributed to the differential anomalous Hall resistance due to the thickness difference at the electrodes for the longitudinal resistance measurements. The unidirectional MR effect in the Co/Pt bilayers can be greatly suppressed by a non-magnetic Cu inserting layer.

Giant magnetoresistance (GMR) behavior of electrodeposited NiFe/Cu multilayers: Dependence of non-magnetic and magnetic layer thicknesses

NASA Astrophysics Data System (ADS)

Kuru, Hilal; Kockar, Hakan; Alper, Mursel

2017-12-01

Giant magnetoresistance (GMR) behavior in electrodeposited NiFe/Cu multilayers was investigated as a function of non-magnetic (Cu) and ferromagnetic (NiFe) layer thicknesses, respectively. Prior to the GMR analysis, structural and magnetic analyses of the multilayers were also studied. The elemental analysis of the multilayers indicated that the Cu and Ni content in the multilayers increase with increasing Cu and NiFe layer thickness, respectively. The structural studies by X-ray diffraction revealed that all multilayers have face centred cubic structure with preferred (1 1 0) crystal orientation as their substrates. The magnetic properties studied with the vibrating sample magnetometer showed that the magnetizations of the samples are significantly affected by the layer thicknesses. Saturation magnetisation, Ms increases from 45 to 225 emu/cm3 with increasing NiFe layer thickness. The increase in the Ni content of the multilayers with a small Fe content causes an increase in the Ms. And, the coercivities ranging from 2 to 24 Oe are between the soft and hard magnetic properties. Also, the magnetic easy axis of the multilayers was found to be in the film plane. Magnetoresistance measurements showed that all multilayers exhibited the GMR behavior. The GMR magnitude increases with increasing Cu layer thickness and reaches its maximum value of 10% at the Cu layer thickness of 1 nm, then it decreases. And similarly, the GMR magnitude increases and reaches highest value of pure GMR (10%) for the NiFe layer thickness of 3 nm, and beyond this point GMR decreases with increasing NiFe layer thickness. Some small component of the anisotropic magnetoresistance was also observed at thin Cu and thick NiFe layer thicknesses. It is seen that the highest GMR values up to 10% were obtained in electrodeposited NiFe/Cu multilayers up to now. The structural, magnetic and magnetoresistance properties of the NiFe/Cu were reported via the variations of the thicknesses of Cu and Ni

Magnetic-proximity-induced magnetoresistance on topological insulators

NASA Astrophysics Data System (ADS)

Chiba, Takahiro; Takahashi, Saburo; Bauer, Gerrit E. W.

2017-03-01

We theoretically study the magnetoresistance (MR) of two-dimensional massless Dirac electrons as found on the surface of three-dimensional topological insulators (TIs) that are capped by a ferromagnetic insulator (FI). We calculate charge and spin transport by Kubo and Boltzmann theories, taking into account the ladder-vertex correction and the in-scattering due to normal and magnetic disorder. The induced exchange splitting is found to generate an electric conductivity that depends on the magnetization orientation, but its form is very different from both the anisotropic and the spin Hall MR. The in-plane MR vanishes identically for nonmagnetic disorder, while out-of-plane magnetizations cause a large MR ratio. On the other hand, we do find an in-plane MR and planar Hall effect in the presence of magnetic disorder aligned with the FI magnetization. Our results may help us understand recent transport measurements on TI |FI systems.

Magnetoresistance of an Anderson insulator of bosons.

PubMed

Gangopadhyay, Anirban; Galitski, Victor; Müller, Markus

2013-07-12

We study the magnetoresistance of two-dimensional bosonic Anderson insulators. We describe the change in spatial decay of localized excitations in response to a magnetic field, which is given by an interference sum over alternative tunneling trajectories. The excitations become more localized with increasing field (in sharp contrast to generic fermionic excitations which get weakly delocalized): the localization length ξ(B) is found to change as ξ(-1)(B)-ξ(-1)(0)~B(4/5). The quantum interference problem maps onto the classical statistical mechanics of directed polymers in random media (DPRM). We explain the observed scaling using a simplified droplet model which incorporates the nontrivial DPRM exponents. Our results have implications for a variety of experiments on magnetic-field-tuned superconductor-to-insulator transitions observed in disordered films, granular superconductors, and Josephson junction arrays, as well as for cold atoms in artificial gauge fields.

Transport properties of Nd0.67Sr0.33Mn0.85Co0.15O3 manganite

NASA Astrophysics Data System (ADS)

Bhargav, Abhinav; Tank, Tejas M.; Sanyal, Sankar P.

2018-05-01

We have studied the structural and electrical transport properties of Nd0.67Sr0.33Mn0.85Co0.15O3 manganite prepared through conventional solid state reaction technique. The investigation of X-ray diffraction data and rietvield refinement show that the synthesized sample is single phase in nature and crystallizes in orthorhombic perovskite structure with Pbnm space group. The resistivity versus temperature measurement for sample Nd0.67Sr0.33Mn0.85Co0.15O3 was performed in the range 0-300K and at 0T field. The electrical transport mechanism of the sample is analyzed by different theoretical models, for temperatures below and above TP.

230% room-temperature magnetoresistance in CoFeB /MgO/CoFeB magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Djayaprawira, David D.; Tsunekawa, Koji; Nagai, Motonobu; Maehara, Hiroki; Yamagata, Shinji; Watanabe, Naoki; Yuasa, Shinji; Suzuki, Yoshishige; Ando, Koji

2005-02-01

Magnetoresistance (MR) ratio up to 230% at room temperature (294% at 20 K) has been observed in spin-valve-type magnetic tunnel junctions (MTJs) using MgO tunnel barrier layer fabricated on thermally oxidized Si substrates. We found that such a high MR ratio can be obtained when the MgO barrier layer was sandwiched with amorphous CoFeB ferromagnetic electrodes. Microstructure analysis revealed that the MgO layer with (001) fiber texture was realized when the MgO layer was grown on amorphous CoFeB rather than on polycrystalline CoFe. Since there have been no theoretical studies on the MTJs with a crystalline tunnel barrier and amorphous electrodes, the detailed mechanism of the huge tunneling MR effect observed in this study is not clear at the present stage. Nevertheless, the present work is of paramount importance in realizing high-density magnetoresistive random access memory and read head for ultra high-density hard-disk drives into practical use.

Momentum-resolved observations of the phonon instability driving geometric improper ferroelectricity in yttrium manganite

DOE PAGES

Bansal, Dipanshu; Niedziela, Jennifer L.; Sinclair, Ryan; ...

2018-01-02

Magnetoelectrics offer tantalizing opportunities for devices coupling ferroelectricity and magnetism but remain difficult to realize. Breakthrough strategies could circumvent the mutually exclusive origins of magnetism and ferroelectricity by exploiting the interaction of multiple phonon modes in geometric improper and hybrid improper ferroelectrics. Yet, the proposed instability of a zone-boundary phonon mode, driving the emergence of ferroelectricity via coupling to a polar mode, remains to be directly observed. Here, we provide previously missing evidence for this scenario in the archetypal improper ferroelectric, yttrium manganite, through comprehensive scattering measurements of the atomic structure and phonons, supported with first-principles simulations. Our experiments andmore » theoretical modeling resolve the origin of the unusual temperature dependence of the polarization and rule out a reported double-step ferroelectric transition. These results emphasize the critical role of phonon anharmonicity in rationalizing lattice instabilities in improper ferroelectrics and show that including these effects in simulations could facilitate the design of magnetoelectrics.« less

Momentum-resolved observations of the phonon instability driving geometric improper ferroelectricity in yttrium manganite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bansal, Dipanshu; Niedziela, Jennifer L.; Sinclair, Ryan

Magnetoelectrics offer tantalizing opportunities for devices coupling ferroelectricity and magnetism but remain difficult to realize. Breakthrough strategies could circumvent the mutually exclusive origins of magnetism and ferroelectricity by exploiting the interaction of multiple phonon modes in geometric improper and hybrid improper ferroelectrics. Yet, the proposed instability of a zone-boundary phonon mode, driving the emergence of ferroelectricity via coupling to a polar mode, remains to be directly observed. Here, we provide previously missing evidence for this scenario in the archetypal improper ferroelectric, yttrium manganite, through comprehensive scattering measurements of the atomic structure and phonons, supported with first-principles simulations. Our experiments andmore » theoretical modeling resolve the origin of the unusual temperature dependence of the polarization and rule out a reported double-step ferroelectric transition. These results emphasize the critical role of phonon anharmonicity in rationalizing lattice instabilities in improper ferroelectrics and show that including these effects in simulations could facilitate the design of magnetoelectrics.« less

Momentum-resolved observations of the phonon instability driving geometric improper ferroelectricity in yttrium manganite.

PubMed

Bansal, Dipanshu; Niedziela, Jennifer L; Sinclair, Ryan; Garlea, V Ovidiu; Abernathy, Douglas L; Chi, Songxue; Ren, Yang; Zhou, Haidong; Delaire, Olivier

2018-01-02

Magnetoelectrics offer tantalizing opportunities for devices coupling ferroelectricity and magnetism but remain difficult to realize. Breakthrough strategies could circumvent the mutually exclusive origins of magnetism and ferroelectricity by exploiting the interaction of multiple phonon modes in geometric improper and hybrid improper ferroelectrics. Yet, the proposed instability of a zone-boundary phonon mode, driving the emergence of ferroelectricity via coupling to a polar mode, remains to be directly observed. Here, we provide previously missing evidence for this scenario in the archetypal improper ferroelectric, yttrium manganite, through comprehensive scattering measurements of the atomic structure and phonons, supported with first-principles simulations. Our experiments and theoretical modeling resolve the origin of the unusual temperature dependence of the polarization and rule out a reported double-step ferroelectric transition. These results emphasize the critical role of phonon anharmonicity in rationalizing lattice instabilities in improper ferroelectrics and show that including these effects in simulations could facilitate the design of magnetoelectrics.

Large positive magnetoresistance in intermetallic compound NdCo2Si2

NASA Astrophysics Data System (ADS)

Roy Chowdhury, R.; Dhara, S.; Das, I.; Bandyopadhyay, B.; Rawat, R.

2018-04-01

The magnetic, magneto-transport and magnetocaloric properties of antiferromagnetic intermetallic compound NdCo2Si2 (TN = 32K) have been studied. The compound yields a positive magnetoresistance (MR) of about ∼ 123 % at ∼ 5K in 8 T magnetic field. The MR value is significantly large vis - a - vis earlier reports of large MR in intermetallic compounds, and possibly associated with the changes in magnetic structure of the compound. The large MR value can be explained in terms of field induced pseudo-gaps on Fermi surface.

Low electron mobility of field-effect transistor determined by modulated magnetoresistance

NASA Astrophysics Data System (ADS)

Tauk, R.; Łusakowski, J.; Knap, W.; Tiberj, A.; Bougrioua, Z.; Azize, M.; Lorenzini, P.; Sakowicz, M.; Karpierz, K.; Fenouillet-Beranger, C.; Cassé, M.; Gallon, C.; Boeuf, F.; Skotnicki, T.

2007-11-01

Room temperature magnetotransport experiments were carried out on field-effect transistors in magnetic fields up to 10 T. It is shown that measurements of the transistor magnetoresistance and its first derivative with respect to the gate voltage allow the derivation of the electron mobility in the gated part of the transistor channel, while the access/contact resistances and the transistor gate length need not be known. We demonstrate the potential of this method using GaN and Si field-effect transistors and discuss its importance for mobility measurements in transistors with nanometer gate length.

Linear unsaturating magnetoresistance in disordered systems

NASA Astrophysics Data System (ADS)

Lai, Ying Tong; Lara, Silvia; Love, Cameron; Ramakrishnan, Navneeth; Adam, Shaffique

Theoretical works have shown that disordered systems exhibit classical magnetoresistance (MR). In this talk, we examine a variety of experimental systems that observe linear MR at high magnetic fields, including silver chalcogenides, graphene, graphite and Weyl semimetals. We show that a careful analysis of the magnitude of the MR, as well as the field strength at which the MR changes from quadratic to linear, reveal important properties of the system, such as the ratio of the root-mean-square fluctuations in the carrier density and the average carrier density. By looking at other properties such as the zero-field mobility, we show that this carrier density inhomogeneity is consistent with what is known about the microscopic impurities in these experiments. The application of this disorder-induced MR to a variety of different experimental scenarios underline the universality of these theoretical models. This work is supported by the Singapore National Research Foundation (NRF-NRFF2012-01) and the Singapore Ministry of Education and Yale-NUS College through Grant Number R-607-265-01312.

Magnetoresistance Study in a GaAs/InGaAs/GaAs Delta-Doped Quantum Well

NASA Astrophysics Data System (ADS)

Hasbun, J. E.

1997-03-01

The magnetoresistance of a GaAs/Ga_0.87In_0.13As/GaAs with an electron concentration of N_s=6.3x10^11cm-2 is calculated at low temperature for a magnetic field range of 2-30 tesla and low electric field. The results obtained for the magnetotransport are compared with the experimental work of Herfort et al.(J. Herfort, K.-J. Friedland, H. Kostial, and R. Hey, Appl. Phys. Lett. V66, 23 (1995)). While the logitudinal magnetoresistance agrees reasonably well with experiment, the Hall resistance slope reflects a classical shape; however, its second derivative seems to show oscillations that are consistent with the Hall effect plateaus seen experimentally. Albeit with a much higher electron concentration, earlier calculationsfootnote J. Hasbun, APS Bull. V41, 419 (1996) for an Al_0.27Ga_0.73/GaAs /Al_0.27Ga_0.73As quantum well shows similar behavior. This work has been carried out with the use of a quantum many body approach employed in earlier work(J. Hasbun, APS Bull. V41, 1659 (1996)).

Origin of the extremely large magnetoresistance in topological semimetal PtS n4

NASA Astrophysics Data System (ADS)

Luo, X.; Xiao, R. C.; Chen, F. C.; Yan, J.; Pei, Q. L.; Sun, Y.; Lu, W. J.; Tong, P.; Sheng, Z. G.; Zhu, X. B.; Song, W. H.; Sun, Y. P.

2018-05-01

PtS n4 with extremely large magnetoresistance (XMR), a fascinating topological material platform, hosts a novel topological structure and Dirac node arcs, in which the Dirac nodes form closed loops in the momentum space. Here we performed the angular dependent magnetoresistivity (AMR), Hall effect, heat capacity measurements, and first-principles calculations to study the electronic properties of topological semimetal PtS n4 . There are some interesting observations on PtS n4 . (1) In the different experimental probes, we observed the anomalies around T ˜55 K . Significant changes of the transport results and the heat capacity have been observed, indicating successive Fermi surface reconstruction induced by the temperature. It means there is Lifshitz transition (LT) induced by the temperature in PtS n4 . (2) The perfect compensation between the electron and hole has been found around T ˜30 K , where the XMR appears, which is confirmed by the Hall effect measurements and the first-principles calculations. The XMR effect in PtS n4 is suggested to originate from the combination of the electron-hole compensation and a particular orbital texture on the electron pocket. Meanwhile, we also found that LT seems to serve as a knob for the novel topological properties in two-dimensional (2D) topological semimetals (TSMs).

Low temperature thermopower and magnetoresistance of Sc-rich CeSc1-xTixGe

NASA Astrophysics Data System (ADS)

Encina, S.; Pedrazzini, P.; Sereni, J. G.; Geibel, C.

2018-05-01

In CeSc1-xTixGe, Ti-alloying reduces the record-high antiferromagnetic (AFM) ordering temperature found in CeScGe at TN = 46 K and induces ferromagnetism for x ≥ 0.5 . In this work we focus on the AFM side, i.e. Sc-rich samples, and study their thermopower S (T) and magnetoresistance ρ (H , T) . The measured S (T) is small in comparison with the thermopower of other Ce-systems and shows some features that are compatible with a weak hybridization between the 4 f and band states. This is a further hint pointing to the local character of magnetism in this alloy. Magnetic fields up to 16 T have a minor effect on the electrical resistivity of stoichiometric CeScGe. On the other hand, for x = 0.65 , we find that fields above 4 T suppress the hump in ρ (T) . Furthermore, the 4.2 K magnetoresistance displays a strong decrease in the same field range, also in coincidence with magnetization results from the literature. Our results indicate that ρ (T , H) is a proper tool to assess the H - T phase diagram of this system.

Tuning the electronic and the crystalline structure of LaBi by pressure: From extreme magnetoresistance to superconductivity

DOE PAGES

Tafti, F. F.; Torikachvili, M. S.; Stillwell, R. L.; ...

2017-01-10

Here, extreme magnetoresistance (XMR) in topological semimetals is a recent discovery which attracts attention due to its robust appearance in a growing number of materials. To search for a relation between XMR and superconductivity, we study the effect of pressure on LaBi. By increasing pressure, we observe the disappearance of XMR followed by the appearance of superconductivity at P ≈ 3.5 GPa. We find a region of coexistence between superconductivity and XMR in LaBi in contrast to other superconducting XMR materials. The suppression of XMR is correlated with increasing zero-field resistance instead of decreasing in-field resistance. At higher pressures, Pmore » ≈ 11 GPa, we find a structural transition from the face-centered cubic lattice to a primitive tetragonal lattice, in agreement with theoretical predictions. The relationship between extreme magnetoresistance, superconductivity, and structural transition in LaBi is discussed.« less

Magnetic and Transport Properties of Heterostructured Films of Prussian Blue Analogues and Manganites

NASA Astrophysics Data System (ADS)

Quintero, P. A.; Jeen, H.; Knowles, E. S.; Biswas, A.; Meisel, M. W.; Andrus, M. J.; Talham, D. R.

2011-03-01

The magnetic and transport properties of heterostructured films consisting of Prussian blue analogues, Aj M' k [M(CN)6 ]l . n H2 O (M' M-PBA), where A is an alkali ion and M' ,M are transition metals, and manganites have been studied. Specifically, NiCr-PBA and CoFe-PBA films of ~ 100 ~nm thickness have been deposited on perovskite (La 1-y Pr y)0.67 Ca 0.33 Mn O3 (LPCMO) manganese films of ~ 30 ~nm thickness. The effect of the ferromagnetic NiCr-PBA, Tc ~ 70 ~K, and the photo-controllable ferrimagnetic CoFe-PBA, Tc ~ 20 ~K, on the I-V properties of the LPCMO will be reported, where special attention will be given to the changes of the transition temperatures of the ferromagnetic metallic (FMM) and the charge-ordered insulating (COI) phases in the LPCMO substrate. ** Supported by NSF DMR-0701400 (MWM), DMR-0804452 (AB), DMR-1005581 (DRT), DMR-0654118 (NHMFL), and by scholarship from the Organization of American States (PAQ). D.M.~Pajerowski et al., J.~Am.~Chem. Soc. 132 (2010) 4058.

Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Han-Chun; Ye, Tianyu; Mani, R. G.

2015-02-14

Linear polarization angle, θ, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, R{sub xx}, in high mobility GaAs/AlGaAs 2D electron devices have shown a θ dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, θ{sub 0}. Here, we suggest a microwave frequency dependence of θ{sub 0}(f) using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.

Delocalized and localized states of eg electrons in half-doped manganites.

PubMed

Winkler, E L; Tovar, M; Causa, M T

2013-07-24

We have studied the magnetic behaviour of half-doped manganite Y0.5Ca0.5MnO3 in an extended range of temperatures by means of magnetic susceptibility, χ(T), and electron spin resonance (ESR) experiments. At high temperature the system crystallizes in an orthorhombic structure. The resistivity value, ρ ≃ 0.05 Ω cm at 500 K, indicates a metallic behaviour, while the Curie-Weiss dependence of χ(T) and the thermal evolution of the ESR parameters are very well described by a model that considers a system conformed by localized Mn(4+) cores, [Formula: see text], and itinerant, eg, electrons. The strong coupling between t2g and eg electrons results in an enhanced Curie constant and an FM Curie-Weiss temperature that overcomes the AFM interactions between the [Formula: see text] cores. A transition to a more distorted phase is observed at T ≈ 500 K and signatures of localization of the eg electrons appear in the χ(T) behaviour below 300 K. A new Curie-Weiss regime is observed, where the Curie-constant value is consistent with dimer formation. Based on mean-field calculations, the dimer formation is predicted as a function of the interaction strength between the t2g and eg electrons.

Titania-coated manganite nanoparticles: Synthesis of the shell, characterization and MRI properties

NASA Astrophysics Data System (ADS)

Jirák, Zdeněk; Kuličková, Jarmila; Herynek, Vít; Maryško, Miroslav; Koktan, Jakub; Kaman, Ondřej

2017-04-01

Novel procedure for coating of oxide nanoparticles with titania, employing hydrolysis and polycondensation of titanium alkoxides under high-dilution conditions and cationic surfactants, is developed and applied to magnetic cores of perovskite manganite. Bare particles of the ferromagnetic La0.65Sr0.35MnO3 phase, possessing high magnetization, M10 kOe(4.5 K) = 63.5 emu g-1, and Curie temperature, TC = 355 K, are synthesized by sol-gel procedure and subsequently coated with titania. Further, a comparative silica-coated product is prepared. In order to analyse the morphology, colloidal stability, and surface properties of these two types of coated particles, a detailed study by means of transmission electron microscopy, dynamic light scattering, zeta-potential measurements, and IR spectroscopy is carried out. The experiments on the titania-coated sample reveal a continuous though porous character of the TiO2 shell, the nature of which is amorphous but can be transformed to anatase at higher temperatures. Finally, the relaxometric study at the magnetic field of 0.5 T, performed to quantity the transverse relaxivity and its temperature dependence, reveals important differences between the titania-coated and silica-coated nanoparticles.

Extremely large magnetoresistance in a high-quality WTe2 grown by flux method

NASA Astrophysics Data System (ADS)

Tsumura, K.; Yano, R.; Kashiwaya, H.; Koyanagi, M.; Masubuchi, S.; Machida, T.; Namiki, H.; Sasagawa, T.; Kashiwaya, S.

2018-03-01

We have grown single crystals of WTe2 by a self-flux method and evaluated the quality of the crystals. A Hall bar-type device was fabricated from an as-exfoliated film on a Si substrate and longitudinal resistance Rxx was measured. Rxx increased with an applied perpendicular magnetic field without saturation and an extremely large magnetoresistance as high as 376,059 % was observed at 8.27 T and 1.7 K.

Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier

NASA Astrophysics Data System (ADS)

Al-Mahdawi, Muftah; Sahashi, Masashi

2014-01-01

We report on the observation of anisotropic magnetoresistance (AMR) in vertical asymmetric nano-contacts (NCs) made through AlOx nano-oxide layer (NOL) formed by ion-assisted oxidation method in the film stack of Co/AlOx-NOL/Pt. Analysis of NC formation was based on in situ conductive atomic force microscopy and transmission electron microscopy. Depending on the purity of NCs from Al contamination, we observed up to 29% AMR ratio at room temperature.

Terahertz Photovoltaic Detection of Cyclotron Resonance in the Regime of Radiation-Induced Magnetoresistance Oscillations

DTIC Science & Technology

2013-06-17

should not contrued as an official Department of the Army position, policy or decision, unless so designated by other documentation. 9. SPONSORING...construed as an official Department of the Army position, policy or decision, unless so designated by other documentation. ... PHYSICAL REVIEW B 87, 245308...oscillations in the diagonal magnetoresistance, Rxx , of the 2DES at cryogenic temperatures, T , with oscillatory nodes near integral and half- integral

Colossal magnetocapacitive effects in geometrically frustrated chalcogenide spinels

NASA Astrophysics Data System (ADS)

Lunkenheimer, Peter

2006-03-01

It is well known that the spinel structure is susceptible to the occurrence of geometrical frustration, which in the past was invoked to explain a number of unusual observations concerning the magnetic and orbital degrees of freedom in these materials. We demonstrate that several chalcogenide spinels also exhibit very unusual dielectric behavior, especially an extremely strong coupling of magnetic and dielectric properties and the simultaneous occurrence of magnetic and polar order. Especially, in CdCr2S4 a colossal magnetocapacitive effect is observed, which shows up as a sharp upturn of the dielectric constant ɛ' when the sample becomes ferromagnetic and as a variation of ɛ' up to a factor of 30 when the sample is subjected to external magnetic fields. As revealed by linear and non-linear dielectric measurements, this material shows the typical signatures of relaxor ferroelectrics, i.e. a strong increase of the static dielectric constant with decreasing temperature and considerable frequency dispersion of the complex permittivity. While in most relaxor ferroelectrics the freezing of polar moments is driven by frustrated interactions related to substitutional disorder, in the present pure system geometrical frustration seems a plausible mechanism to explain the relaxor behavior. However, one may also speculate on completely different mechanisms of ferroelectric polarization, e.g., the ordering of electronic degrees of freedom. The concomitant occurrence of polar and magnetic order makes CdCr2S4 another example of the rare species of multiferroic materials. In contrast to other members of this group of materials, it has sizable ordering temperatures and moments. A detailed investigation of the relaxational dynamics in this material provides clear evidence that the observed magnetocapacitive effect stems from an enormous acceleration of the relaxation dynamics induced by the development of magnetic order. In addition, recent results reveal even larger

The magnetoresistance of sub-micron Fe wires

NASA Astrophysics Data System (ADS)

Blundell, S. J.; Shearwood, C.; Gester, M.; Baird, M. J.; Bland, J. A. C.; Ahmed, H.

1994-07-01

A novel combination of electron- and ion-beam lithography has been used to prepare Fe gratings with wire widths of 0.5 μm and wire separations in the range 0.5-4 μm from an Fe/GaAs (001) film of thickness 25 nm. With an in-plane magnetic field applied perpendicular to the length of the wires, a harder magnetisation loop is observed using the magneto-optic Kerr effect (MOKE), compared with that observed in the unprocessed film. We observe a strong effect in the magnetoresistance (MR) when the magnetic field is applied transverse to the wires. It is believed that this effect originates from the highly non-uniform demagnetising field in each wire of the grating. These results demonstrate that the combination of MOKE and MR measurements can provide important information about the magnetisation reversal processes in magnetic gratings and can be used to understand the effect of shape anisotropy on magnetic properties.

Antiferromagnetic coupling and magnetoresistance enhancement in Co-Re metallic superlattices (abstract)

NASA Astrophysics Data System (ADS)

Freitas, P. P.; From, M.; Melo, L. V.; Ferreira, J.; Trindade, I.; Monteiro, P.

1991-11-01

Co-Re metallic superlattices were prepared that show antiferromagnetic exchange coupling and enhanced saturation magnetoresistance for particular values of the Re spacer thickness. We report studies on films with the structure glass /150 Å Re/[13 ÅCo/tRe]16/50 Å Re, with tRe ranging from 3 to 40 Å. These structures were grown by magnetron sputtering in a system with a base pressure of 1×10-7 Torr with deposition rates of 0.3 and 0.4 Å/s for Co and Re, respectively. x-ray diffractograms indicate the structure to be highly textured with the c axis perpendicular to the sample plane. The superlattice structure was obtained from high-angle θ-2θ scans. First-, second-, and third-order satellites are observed on both sides of the central [002] peak. Periodicity and bilayer composition are obtained from comparison of the data with a theoretical calculation of the x-ray diffractogram. Thickness calibration was confirmed by Rutherford backscattering and profilometer data. In-plane magnetization and magnetoresistance data (Δρ/ρ) indicate that stronger antiferromagnetic coupling and highest Δρ/ρ occur for tRe≊6 Å. The saturation field (Hs) needed to align contiguous antiferromagnetically coupled Co layers is about 1 T. This corresponds to an exchange coupling between the Co layer J≊-1 erg/cm2. (Δρ/ρ) reaches 2% in samples deposited at 170 °C. This data confirms results obtained by Parkin et al.1 in Co-Ru and Co-Cr superlattices.

Development of a Magneto-Resistive Angular Position Sensor for Space Mechanisms

NASA Technical Reports Server (NTRS)

Hahn, Robert; Schmidt, Tilo; Seifart, Klaus; Olberts, Bastian; Romera, Fernando

2016-01-01

Magnetic microsystems in the form of magneto-resistive (MR) sensors are firmly established in automobiles and industrial applications. They are used to measure travel, angle, electrical current, or magnetic fields. MR technology opens up new sensor possibilities in space applications and can be an enabling technology for optimal performance, high robustness and long lifetime at reasonable costs. In some science missions, the technology is already applied, however, the designs are proprietary and case specific, for instance in case of the angular sensors used for JPL/NASA's Mars rover Curiosity [1]. Since 2013 HTS GmbH and Sensitec GmbH have teamed up to develop and qualify a standardized yet flexible to use MR angular sensor for space mechanisms. Starting with a first assessment study and market survey performed under ESA contract, a very strong industry interest in novel, contactless position measurement means was found. Currently a detailed and comprehensive development program is being performed by HTS and Sensitec. The objective of this program is to advance the sensor design up to Engineering Qualification Model level and to perform qualification testing for a representative space application. The paper briefly reviews the basics of magneto-resistive effects and possible sensor applications and describes the key benefits of MR angular sensors with reference to currently operational industrial and space applications. The key applications and specification are presented and the preliminary baseline mechanical and electrical design will be discussed. An outlook on the upcoming development and test stages as well as the qualification program will be provided.

Magnetocardiography and magnetoencephalography measurements at room temperature using tunnel magneto-resistance sensors

NASA Astrophysics Data System (ADS)

Fujiwara, Kosuke; Oogane, Mikihiko; Kanno, Akitake; Imada, Masahiro; Jono, Junichi; Terauchi, Takashi; Okuno, Tetsuo; Aritomi, Yuuji; Morikawa, Masahiro; Tsuchida, Masaaki; Nakasato, Nobukazu; Ando, Yasuo

2018-02-01

Magnetocardiography (MCG) and magnetoencephalography (MEG) signals were detected at room temperature using tunnel magneto-resistance (TMR) sensors. TMR sensors developed with low-noise amplifier circuits detected the MCG R wave without averaging, and the QRS complex was clearly observed with averaging at a high signal-to-noise ratio. Spatial mapping of the MCG was also achieved. Averaging of MEG signals triggered by electroencephalography (EEG) clearly observed the phase inversion of the alpha rhythm with a correlation coefficient as high as 0.7 between EEG and MEG.

Angular studies of the magnetoresistance in the density wave state of the quasi-two-dimensional purple bronze KMo6O17

NASA Astrophysics Data System (ADS)

Guyot, H.; Dumas, J.; Kartsovnik, M. V.; Marcus, J.; Schlenker, C.; Sheikin, I.; Vignolles, D.

2007-07-01

The purple molybdenum bronze KMo6O17 is a quasi-two-dimensional compound which shows a Peierls transition towards a commensurate metallic charge density wave (CDW) state. High magnetic field measurements have revealed several transitions at low temperature and have provided an unusual phase diagram “temperature-magnetic field”. Angular studies of the interlayer magnetoresistance are now reported. The results suggest that the orbital coupling of the magnetic field to the CDW is the most likely mechanism for the field induced transitions. The angular dependence of the magnetoresistance is discussed on the basis of a warped quasi-cylindrical Fermi surface and provides information on the geometry of the Fermi surface in the low temperature density wave state.

Ballistic anisotropic magnetoresistance in core-shell nanowires and rolled-up nanotubes

NASA Astrophysics Data System (ADS)

Chang, Ching-Hao; Ortix, Carmine

2017-01-01

In ferromagnetic nanostructures, the ballistic anisotropic magnetoresistance (BAMR) is a change in the ballistic conductance with the direction of magnetization due to spin-orbit interaction. Very recently, a directional dependent ballistic conductance has been predicted to occur in a number of newly synthesized nonmagnetic semiconducting nanostructures subject to externally applied magnetic fields, without necessitating spin-orbit coupling. In this paper, we review past works on the prediction of this BAMR effect in core-shell nanowires (CSN) and rolled-up nanotubes (RUNTs). This is complemented by new results, we establish for the transport properties of tubular nanosystems subject to external magnetic fields.

All-optical switching of magnetoresistive devices using telecom-band femtosecond laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Li; Chen, Jun-Yang; Wang, Jian-Ping, E-mail: jpwang@umn.edu, E-mail: moli@umn.edu

Ultrafast all-optical switching of the magnetization of various magnetic systems is an intriguing phenomenon that can have tremendous impact on information storage and processing. Here, we demonstrate all-optical switching of GdFeCo alloy films using a telecom-band femtosecond fiber laser. We further fabricate Hall cross devices and electrically readout all-optical switching by measuring anomalous Hall voltage changes. The use of a telecom laser and the demonstrated all-optical switching of magnetoresistive devices represent the first step toward integration of opto-magnetic devices with mainstream photonic devices to enable novel optical and spintronic functionalities.

Effects of Secondary Phases on the High-Performance Colossal Permittivity in Titanium Dioxide Ceramics.

PubMed

Zhao, Chunlin; Wu, Jiagang

2018-01-31

The intensive demands of microelectronics and energy-storage applications are driving the increasing investigations on the colossal permittivity (CP) materials. In this study, we designed a new system of Dy and Nb co-doped TiO 2 ceramics [(Dy 0.5 Nb 0.5 ) x Ti 1-x O 2 ] with the formation of secondary phases, and then the enhancement of overall dielectric properties (ε r ∼ 5.0-6.5 × 10 4 and tan δ < 8%) was realized in the broad composition range of 0.5 ≤ x ≤ 5%. More importantly, effects of secondary phases on microstructure, dielectric properties, and stability were explored from the views of defect-dipoles and internal barrier layer capacitance (IBLC) effect. According to the defect-dipoles theory, the CP should mainly originate from Nb 5+ , and the Dy 3+ largely contributes to the decreased dielectric loss. Both CP and low dielectric loss were obtained for co-doping with Dy 3+ and Nb 5+ . Besides, the Dy enrichment induced the formation of secondary phases, which were regarded as the low loss unit dispersed into the ceramic matrix, and largely facilitate the decreased dielectric loss. In particular, the analysis of temperature-dependent complex impedance spectra indicated that a stronger IBLC effect caused by the increased grain boundary resistance can also contribute to the optimized CP and low dielectric loss under appropriate contents of secondary phases.

Enhancement of the giant magnetoresistance in spin valves via oxides formed from magnetic layers

NASA Astrophysics Data System (ADS)

Gillies, M. F.; Kuiper, A. E. T.

2000-11-01

An enhancement of the giant magnetoresistance effect is investigated in spin valves where oxide layers, which are formed from magnetic layers, are incorporated in the structure. Information about Co-Fe based nanooxide layer (NOL) is obtained via x-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. Cross-section transmission electron microscopy is also used to explore the effect of an NOL on the polycrystalline structure of the spin valve.

Colossal dielectric permittivity in (Al + Nb) co-doped rutile SnO2 ceramics with low loss at room temperature

NASA Astrophysics Data System (ADS)

Song, Yongli; Wang, Xianjie; Zhang, Xingquan; Qi, Xudong; Liu, Zhiguo; Zhang, Lingli; Zhang, Yu; Wang, Yang; Sui, Yu; Song, Bo

2016-10-01

The exploration of colossal dielectric permittivity (CP) materials with low dielectric loss in a wide range of frequencies/temperatures continues to attract considerable interest. In this paper, we report CP in (Al + Nb) co-doped rutile SnO2 ceramics with a low dielectric loss at room temperature. Al0.02Nb0.05Sn0.93O2 and Al0.03Nb0.05Sn0.92O2 ceramics exhibit high relative dielectric permittivities (above 103) and low dielectric losses (0.015 < tan δ < 0.1) in a wide range of frequencies and at temperatures from 140 to 400 K. Al doping can effectively modulate the dielectric behavior by increasing the grain and grain boundary resistances. The large differences in the resistance and conductive activation energy of the grains and grain boundaries suggest that the CP in co-doped SnO2 ceramics can be attributed to the internal barrier layer capacitor effect.

Dielectric properties of doping-free NaMn{sub 7}O{sub 12}: Origin of the observed colossal dielectric constant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cabassi, R.; Bolzoni, F.; Gauzzi, A.

2006-07-15

The semiconducting NaMn{sub 7}O{sub 12} is a doping-free compound with several coexistent properties such as orbital ordering, charge ordering, and magnetic orderings of different types. We investigated its dielectric response by means of frequency impedance measurements in the range from 20 Hz to 1 MHz. Standard measurements on metallized samples exhibit an apparent colossal dielectric constant (CDC) with an {epsilon}{sub R} value of several thousands at low frequencies, but a careful equivalent circuit analysis allows one to ascribe the observed CDC to the effect of a depletion layer on the metal-semiconductor junctions. We bypass this effect by means of amore » nonstandard technique employing mica linings: the resulting dielectric behavior exhibits the presence of the charge ordering transition at T{sub CO}=176 K and shows a net bulk dielectric constant value {epsilon}{sub R}{approx_equal}68 at room temperature.« less

Origin of the magnetoresistance in oxide tunnel junctions determined through electric polarization control of the interface

DOE PAGES

Inoue, Hisashi; Swartz, Adrian G.; Harmon, Nicholas J.; ...

2015-11-11

The observed magnetoresistance (MR) in three-terminal (3T) ferromagnet-nonmagnet (FM-NM) tunnel junctions has historically been assigned to ensemble dephasing (Hanle effect) of a spin accumulation, thus offering a powerful approach for characterizing the spin lifetime of candidate materials for spintronics applications. However, due to crucial discrepancies of the extracted spin parameters with known materials properties, this interpretation has come under intense scrutiny. By employing epitaxial artificial dipoles as the tunnel barrier in oxide heterostructures, the band alignments between the FM and NM channels can be controllably engineered, providing an experimental platform for testing the predictions of the various spin accumulation models.more » Using this approach, we have been able to definitively rule out spin accumulation as the origin of the 3T MR. Instead, we assign the origin of the magnetoresistance to spin-dependent hopping through defect states in the barrier, a fundamental phenomenon seen across diverse systems. In conclusion, a theoretical framework is developed that can account for the signal amplitude, linewidth, and anisotropy.« less

Searching for high-k RE2O3 nanoparticles embedded in SiO2 glass matrix

NASA Astrophysics Data System (ADS)

Mukherjee, S.; Lin, Y. H.; Kao, T. H.; Chou, C. C.; Yang, H. D.

2012-03-01

Significant experimental effort has been explored to search and characterize high-k materials with magnetodielectric effect (MDE) of series of rare earth (RE) oxide (RE2O3) nanoparticles (NPs) embedded in SiO2 glass matrix by a sol-gel route. Properly annealed sol-gel glass (in which RE = Sm, Gd, and Er) shows colossal response of dielectric constant along with diffuse phase transition and MDE around room temperature. The radial distribution functions, reconstructed from extended x-ray absorption fine structure, show the shortening of RE3 + -O depending on the RE2O3 NP size, which is consistent with oxygen vacancy induced dielectric anomaly. The magnetoresistive MDE is very much conditioned by magnetic property of RE2O3 NP grain, the degree of deformation of the lattice and constituent host.

Current-induced strong diamagnetism in the Mott insulator Ca2RuO4.

PubMed

Sow, Chanchal; Yonezawa, Shingo; Kitamura, Sota; Oka, Takashi; Kuroki, Kazuhiko; Nakamura, Fumihiko; Maeno, Yoshiteru

2017-11-24

Mott insulators can host a surprisingly diverse set of quantum phenomena when their frozen electrons are perturbed by various stimuli. Superconductivity, metal-insulator transition, and colossal magnetoresistance induced by element substitution, pressure, and magnetic field are prominent examples. Here we report strong diamagnetism in the Mott insulator calcium ruthenate (Ca 2 RuO 4 ) induced by dc electric current. The application of a current density of merely 1 ampere per centimeter squared induces diamagnetism stronger than that in other nonsuperconducting materials. This change is coincident with changes in the transport properties as the system becomes semimetallic. These findings suggest that dc current may be a means to control the properties of materials in the vicinity of a Mott insulating transition. Copyright © 2017, American Association for the Advancement of Science.

Origin of colossal dielectric response in (In + Nb) co-doped TiO2 rutile ceramics: a potential electrothermal material.

PubMed

Ke, Shanming; Li, Tao; Ye, Mao; Lin, Peng; Yuan, Wenxiang; Zeng, Xierong; Chen, Lang; Huang, Haitao

2017-08-31

(In + Nb) co-doped TiO 2 (TINO) rutile is an emerging material with a colossal dielectric permittivity (CP) and a low dielectric loss over wide temperature and frequency ranges. The electrical inhomogeneous nature of TINO ceramics is demonstrated by direct local current probing with high-resolution conductive atomic force microscopy (cAFM). The CP response in TINO is found to originate from the electron-pinned defect dipole induced conductive cluster effect and the electrode effect. Two types of dielectric relaxations are simultaneously observed due to these two effects. With the given synthesis condition, we found TINO shows a highly leaky feature that impairs its application as a dielectric material. However, the fast-temperature-rising phenomenon found in this work may open a new door for TINO to be applied as a potential electrothermal material with high efficiency, oxidation-proof, high temperature stability, and energy saving.

Magnetoresistivity and microstructure of YBa2Cu3Oy prepared using planetary ball milling

NASA Astrophysics Data System (ADS)

Hamrita, A.; Ben Azzouz, F.; Madani, A.; Ben Salem, M.

2012-01-01

We have studied the microstructure and the magnetoresistivity of polycrystalline YBa2Cu3Oy (YBCO or Y-123 for brevity) embedded with nanoparticles of Y-deficient YBCO, generated by the planetary ball milling technique. Bulk samples were synthesized from a precursor YBCO powder, which was prepared from commercial high purity Y2O3, Ba2CO3 and CuO via a one-step annealing process in air at 950 °C. After planetary ball milling of the precursor, the powder was uniaxially pressed and subsequently annealed at 950 °C in air. Phase analysis by X-ray diffraction (XRD), granular structure examination by scanning electron microscopy (SEM), microstructure investigation by transmission electron microscopy (TEM) coupled with energy dispersive X-ray spectroscopy (EDXS) were carried out. TEM analyses show that nanoparticles of Y-deficient YBCO, generated by ball milling, are embedded in the superconducting matrix. Electrical resistance as a function of temperature, ρ(T), revealed that the zero resistance temperature, Tco, is 84.5 and 90 K for the milled and unmilled samples respectively. The milled ceramics exhibit a large magnetoresistance in weak magnetic fields at liquid nitrogen temperature. This attractive effect is of high significance as it makes these materials promising candidates for practical application in magnetic field sensor devices.

Magnetoresistance measurement of permalloy thin film rings with triangular fins

NASA Astrophysics Data System (ADS)

Lai, Mei-Feng; Hsu, Chia-Jung; Liao, Chun-Neng; Chen, Ying-Jiun; Wei, Zung-Hang

2010-01-01

Magnetization reversals in permalloy rings controlled by nucleation sites using triangular fins at the same side and diagonal with respect to the field direction are demonstrated by magnetoresistance measurement and micromagnetic simulation. In the ring with triangular fins at the same side, there exists two-step reversal from onion to flux-closure state (or vortex state) and then from flux-closure (or vortex state) to reverse onion state; in the ring with diagonal triangular fins, one-step reversal occurs directly from onion to reverse onion state. The reversal processes are repeatable and controllable in contrast to an ideal ring without triangular fins where one-step and two-step reversals occur randomly in sweep-up and sweep-down processes.

Chiral magnetoresistance in the Weyl semimetal NbP

NASA Astrophysics Data System (ADS)

Niemann, Anna Corinna; Gooth, Johannes; Wu, Shu-Chun; Bäßler, Svenja; Sergelius, Philip; Hühne, Ruben; Rellinghaus, Bernd; Shekhar, Chandra; Süß, Vicky; Schmidt, Marcus; Felser, Claudia; Yan, Binghai; Nielsch, Kornelius

2017-03-01

NbP is a recently realized Weyl semimetal (WSM), hosting Weyl points through which conduction and valence bands cross linearly in the bulk and exotic Fermi arcs appear. The most intriguing transport phenomenon of a WSM is the chiral anomaly-induced negative magnetoresistance (NMR) in parallel electric and magnetic fields. In intrinsic NbP the Weyl points lie far from the Fermi energy, making chiral magneto-transport elusive. Here, we use Ga-doping to relocate the Fermi energy in NbP sufficiently close to the W2 Weyl points, for which the different Fermi surfaces are verified by resultant quantum oscillations. Consequently, we observe a NMR for parallel electric and magnetic fields, which is considered as a signature of the chiral anomaly in condensed-matter physics. The NMR survives up to room temperature, making NbP a versatile material platform for the development of Weyltronic applications.

Negative Magnetoresistance without Chiral Anomaly in Topological Insulators.

PubMed

Dai, Xin; Du, Z Z; Lu, Hai-Zhou

2017-10-20

An intriguing phenomenon in topological semimetals and topological insulators is the negative magnetoresistance (MR) observed when a magnetic field is applied along the current direction. A prevailing understanding to the negative MR in topological semimetals is the chiral anomaly, which, however, is not well defined in topological insulators. We calculate the MR of a three-dimensional topological insulator, by using the semiclassical equations of motion, in which the Berry curvature explicitly induces an anomalous velocity and orbital moment. Our theoretical results are in quantitative agreement with the experiments. The negative MR is not sensitive to temperature and increases as the Fermi energy approaches the band edge. The orbital moment and g factors also play important roles in the negative MR. Our results give a reasonable explanation to the negative MR in 3D topological insulators and will be helpful in understanding the anomalous quantum transport in topological states of matter.

Ruddlesden-Popper interface in correlated manganite heterostructures induces magnetic decoupling and dead layer reduction

NASA Astrophysics Data System (ADS)

Belenchuk, A.; Shapoval, O.; Roddatis, V.; Bruchmann-Bamberg, V.; Samwer, K.; Moshnyaga, V.

2016-12-01

We report on the interface engineering in correlated manganite heterostructures by octahedral decoupling using embedded stacks of atomic layers that form the Ruddlesden-Popper structure. A room temperature magnetic decoupling was achieved through deposition of a (SrO)2-TiO2-(SrO)2 sequence of atomic layers at the interface between La0.7Sr0.3MnO3 and La0.7Sr0.3Mn0.9Ru0.1O3 films. Moreover, the narrowing of the interfacial dead layer in ultrathin La0.7Sr0.3MnO3 films was demonstrated by insertion of a single (SrO)2 rock-salt layer at the interface with the SrTiO3(100) substrate. The obtained results are discussed based on the symmetry breaking and disconnection of the MnO6 octahedra network at the interface that may lead to the improved performance of all-oxide magnetic tunnel junctions. We suggest that octahedral decoupling realized by formation of Ruddlesden-Popper interfaces is an effective structural mechanism to control functionalities of correlated perovskite heterostructures.

Magnetic, Electrical and Dielectric Properties of LaMnO3+η Perovskite Manganite.

NASA Astrophysics Data System (ADS)

v, Punith Kumar; Dayal, Vijaylakshmi

The high pure polycrystalline LaMnO3+η perovskite manganite has been synthesized using conventional solid state reaction method. The studied sample crystallizes into orthorhombic O', phase indexed with Pbnm space group. The magnetization measurement exhibits that the studied sample shows paramagnetic (PM) to ferromagnetic (FM) phase transition at TC = 191.6K followed with a frustration due to antiferromagnetic (AFM) kind of spin ordering at low temperature, Tf = 85.8K. The electrical resistivity measurements carried out at 0 tesla and 8 tesla magnetic field exhibits insulating kind of behavior throughout the measured temperature range. The resistivity at 0 tesla exhibits low temperature FM insulator to high temperature PM insulator type phase transition at TC = 191.6K similarly as observed from magnetization measurement. The application of the magnetic field (8 tesla) shifts TC to higher temperature side and the charge transport follows Shklovskii Efros variable range hopping (SE VRH) mechanism. The temperature and frequency dependent dielectric permittivity studied for the sample exhibits relaxation process explained based on Debye +Maxwell-Wagner relaxation mechanism. Department of Atomic Energy-Board of Research in Nuclear Sciences, Government of INDIA.

Low-energy Structural Dynamics of Multiferroic Domain Walls in Hexagonal Rare-earth Manganites

NASA Astrophysics Data System (ADS)

Wu, Xiaoyu; Petralanda, Urko; Zheng, Lu; Ren, Yuan; Hu, Rongwei; Cheong, Sang-Wook; Artyukhin, Sergey; Lai, Keji

Multiferroic domain walls (DWs), the natural interfaces between domains with different order parameters, usually exhibit unconventional functionalities. For instance, recent discovery of the ferroelectric DW conduction highlights its extraordinary electronic structure that is absent in bulk domains. The structural dynamics of individual DWs in the microwave regime, however, have not been fully explored due to the lack of spatially resolved studies. Here, we report the broadband (106-1010 Hz) scanning impedance microscopy results on the interlocked anti-phase boundaries and ferroelectric DWs in hexagonal rare-earth manganites. Surprisingly, the effective conductivity of the (001) DWs displays a 106-fold increase from dc to GHz frequencies, while the effect is absent on surfaces with in-plane polarized domains. First-principles and model calculations indicate that the frequency range and selection rules are consistent with the periodic sliding of the DW around its equilibrium position. This DW acoustic-wave-like mode, which is associated with the synchronized oscillation of local polarization and apical oxygen atoms, is localized perpendicular to the DW but free to propagate along the DW plane. Our results break the ground to understand structural DW dynamics and exploit new interfacial phenomena for novel devices.

Thickness dependence and the role of spin transfer torque in nonlinear giant magnetoresistance of permalloy dual spin valves

NASA Astrophysics Data System (ADS)

Banerjee, N.; Aziz, A.; Ali, M.; Robinson, J. W. A.; Hickey, B. J.; Blamire, M. G.

2010-12-01

The recent discovery of nonlinear current-dependent magnetoresistance in dual spin valve devices [A. Aziz, O. P. Wessely, M. Ali, D. M. Edwards, C. H. Marrows, B. J. Hickey, and M. G. Blamire, Phys. Rev. Lett. 103, 237203 (2009)10.1103/PhysRevLett.103.237203] opens up the possibility for distinct physics which extends the standard model of giant magnetoresistance. When the outer ferromagnetic layers of a dual spin valve are antiparallel, the resulting accumulation of spin in the middle ferromagnetic layer strongly modifies its bulk and interfacial spin asymmetry and resistance. Here, we report experimental evidence of the role of bulk spin accumulation in this nonlinear effect and show that interfacial spin accumulation alone cannot account for the observed dependence of the effect on the thickness of the middle ferromagnetic layer. It is also shown that spin torque acting on the middle ferromagnetic layer combined with the nonlinear effect might be useful in understanding the dynamical features associated with the nonlinear behavior.

Effect of Sr doping on the magnetic exchange interactions in manganites of type L a 1 - x S r x M n y A 1 - y O 3 ( A = Ga , Ti ; 0.1 ≤ y ≤ 1 )

DOE Office of Scientific and Technical Information (OSTI.GOV)

Furrer, Albert; Podlesnyak, Andrey A.; Pomjakushina, Ekaterina

Strontium doping transforms manganites of type La 1 - x Sr x Mn O 3 from an insulating antiferromagnet ( x = 0 ) to a metallic ferromagnet ( x > 0.16 ) due to the induced charge carriers (holes). We employed neutron scattering experiments in order to investigate the effect of Sr doping on a tailor-made compound of composition La 0.7 S r 0.3 M n 0.1 Ti 0.3 G a 0.6 O 3 . By the simultaneous doping with S r 2 + and Ti 4 + ions, the compound remains in the insulating state so thatmore » the magnetic interactions for large Sr doping can be studied in the absence of charge carriers. At T C = 215 K , there is a first-order reconstructive phase transition from the trigonal R - 3 c structure to the orthorhombic Pnma structure via an intermediate virtual configuration described by the common monoclinic subgroup P2 1 / c . The magnetic excitations associated with Mn 3 + dimers give evidence for two different nearest-neighbor ferromagnetic exchange interactions, in contrast to the undoped compound LaM n y A 1 - y O 3 where both ferromagnetic and antiferromagnetic interactions are present. Furthemore, the doping-induced changes of the exchange coupling originates from different Mn-O-Mn bond angles determined by neutron diffraction. The large fourth-nearest-neighbor interaction found for metallic manganites is absent in the insulating state. Here, we argue that the Ruderman-Kittel-Kasuya-Yosida interaction reasonably accounts for all the exchange couplings derived from the spin-wave dispersion in metallic manganites.« less

Effect of Sr doping on the magnetic exchange interactions in manganites of type L a 1 - x S r x M n y A 1 - y O 3 ( A = Ga , Ti ; 0.1 ≤ y ≤ 1 )

DOE PAGES

Furrer, Albert; Podlesnyak, Andrey A.; Pomjakushina, Ekaterina; ...

2017-03-14

Strontium doping transforms manganites of type La 1 - x Sr x Mn O 3 from an insulating antiferromagnet ( x = 0 ) to a metallic ferromagnet ( x > 0.16 ) due to the induced charge carriers (holes). We employed neutron scattering experiments in order to investigate the effect of Sr doping on a tailor-made compound of composition La 0.7 S r 0.3 M n 0.1 Ti 0.3 G a 0.6 O 3 . By the simultaneous doping with S r 2 + and Ti 4 + ions, the compound remains in the insulating state so thatmore » the magnetic interactions for large Sr doping can be studied in the absence of charge carriers. At T C = 215 K , there is a first-order reconstructive phase transition from the trigonal R - 3 c structure to the orthorhombic Pnma structure via an intermediate virtual configuration described by the common monoclinic subgroup P2 1 / c . The magnetic excitations associated with Mn 3 + dimers give evidence for two different nearest-neighbor ferromagnetic exchange interactions, in contrast to the undoped compound LaM n y A 1 - y O 3 where both ferromagnetic and antiferromagnetic interactions are present. Furthemore, the doping-induced changes of the exchange coupling originates from different Mn-O-Mn bond angles determined by neutron diffraction. The large fourth-nearest-neighbor interaction found for metallic manganites is absent in the insulating state. Here, we argue that the Ruderman-Kittel-Kasuya-Yosida interaction reasonably accounts for all the exchange couplings derived from the spin-wave dispersion in metallic manganites.« less

Noncontact vibration measurements using magnetoresistive sensing elements

NASA Astrophysics Data System (ADS)

Tomassini, R.; Rossi, G.

2016-06-01

Contactless instrumentations is more and more used in turbomachinery testing thanks to the non-intrusive character and the possibility to monitor all the components of the machine at the same time. Performances of blade tip timing (BTT) measurement systems, used for noncontact turbine blade vibration measurements, in terms of uncertainty and resolution are strongly affected by sensor characteristics and processing methods. The sensors used for BTT generate pulses, used for precise measurements of turbine blades time of arrival. Nowadays proximity sensors used in this application are based on optical, capacitive, eddy current and microwave measuring principle. Pressure sensors has been also tried. This paper summarizes the results achieved using a novel instrumentation based on the magnetoresistive sensing elements. The characterization of the novel probe has been already published. The measurement system was validated in test benches and in a real jet-engine comparing different sensor technologies. The whole instrumentation was improved. The work presented in this paper focuses on the current developments. In particular, attention is given to the data processing software and new sensor configurations.

Tunneling magnetoresistance from a symmetry filtering effect

PubMed Central

Butler, William H

2008-01-01

This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe–MgO–Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the read sensor in hard drives and may form the basis for a new type of magnetic memory. PMID:27877932

Out of plane magnetoresistance of organic superconductors; κ-(BEDT)2 salts

NASA Astrophysics Data System (ADS)

Maki, Kazumi; Won, Hye Kyung

1998-03-01

It is well documented that the out of plane manetoresistances of κ-(BEDT)_2X with X=Cu(NCS)2 and Cu[N(Cu)_2]Br exhibit a sharp peak before disappearance in the superconducting state (H. Ito et al. J. of Superconductivity 7), 667 (1994). ^, (M. V. Kartsovnik, (private communication).). We analyze this feature in terms of the superconducting fluctuation. Indeed, generalizing the formula for the clean limit (V. V. Dorin et al. Phys. Rev. B 48), 12951 (1993)., the superconducting fluctuation accounts for both the field and the temperature dependence of the magnetoresistance. In this description, d-wave nature of the superconducting order parameter in organic superconductors is crucial.

Magnetoresistance due to domain walls in an epitaxial microfabricated Fe wire

NASA Astrophysics Data System (ADS)

Rüdiger, U.; Yu, J.; Kent, A. D.; Parkin, S. S. P.

1998-08-01

The domain wall (DW) contribution to magnetoresistance has been investigated using an epitaxial microfabricated bcc (110) Fe wires of 2 μm linewidth. A strong in-plane uniaxial component to the magnetic anisotropy perpendicular to the wire axis causes a regular stripe domain pattern with closure domains. The stripe domain width in zero-applied magnetic field is strongly affected by the magnetic history and can be continuously varied from 0.45 to 1.8 μm. This enables a measurement of the resistivity as a function of DW density in a single wire. Clear evidence is presented that the resistivity is reduced in the presence of DWs at low temperatures.

Effects of interface electric field on the magnetoresistance in spin devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanamoto, T., E-mail: tetsufumi.tanamoto@toshiba.co.jp; Ishikawa, M.; Inokuchi, T.

2014-04-28

An extension of the standard spin diffusion theory is presented by using a quantum diffusion theory via a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is greatly modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interfacemore » electronic structures.« less

Hydrodynamic theory of thermoelectric transport and negative magnetoresistance in Weyl semimetals

PubMed Central

Lucas, Andrew; Davison, Richard A.

2016-01-01

We present a theory of thermoelectric transport in weakly disordered Weyl semimetals where the electron–electron scattering time is faster than the electron–impurity scattering time. Our hydrodynamic theory consists of relativistic fluids at each Weyl node, coupled together by perturbatively small intervalley scattering, and long-range Coulomb interactions. The conductivity matrix of our theory is Onsager reciprocal and positive semidefinite. In addition to the usual axial anomaly, we account for the effects of a distinct, axial–gravitational anomaly expected to be present in Weyl semimetals. Negative thermal magnetoresistance is a sharp, experimentally accessible signature of this axial–gravitational anomaly, even beyond the hydrodynamic limit. PMID:27512042

Large magnetoresistance of nickel-silicide nanowires: non-equilibrium heating of magnetically-coupled dangling bonds.

PubMed

Kim, T; Chamberlin, R V; Bird, J P

2013-03-13

We demonstrate large (>100%) time-dependent magnetoresistance in nickel-silicide nanowires and develop a thermodynamic model for this behavior. The model describes nonequilibrium heating of localized spins in an increasing magnetic field. We find a strong interaction between spins but no long-range magnetic order. The spins likely come from unpaired dangling bonds in the interfacial layers of the nanowires. The model indicates that although these bonds couple weakly to a thermal bath, they dominate the nanowire resistance.

Magnetoresistance devices based on single-walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Hod, Oded; Rabani, Eran; Baer, Roi

2005-08-01

We demonstrate the physical principles for the construction of a nanometer-sized magnetoresistance device based on the Aharonov-Bohm effect [Phys. Rev. 115, 485 (1959)]. The proposed device is made of a short single-walled carbon nanotube (SWCNT) placed on a substrate and coupled to a tip/contacts. We consider conductance due to the motion of electrons along the circumference of the tube (as opposed to the motion parallel to its axis). We find that the circumference conductance is sensitive to magnetic fields threading the SWCNT due to the Aharonov-Bohm effect, and show that by retracting the tip/contacts, so that the coupling to the SWCNT is reduced, very high sensitivity to the threading magnetic field develops. This is due to the formation of a narrow resonance through which the tunneling current flows. Using a bias potential the resonance can be shifted to low magnetic fields, allowing the control of conductance with magnetic fields of the order of 1 T.