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Sample records for common-cation ii-vi heterostructures

  1. Wide-gap II-VI heterostructures

    NASA Astrophysics Data System (ADS)

    Gunshor, R. L.; Kolodziejski, L. A.; Kobayashi, M.; Otsuka, N.; Nurmikko, A. V.

    1990-04-01

    Recent advances in the growth of II-VI/II-VI and II-VI/III-V heterostructures based on the widegap II-VI semiconductors CdTe and ZnTe are discussed. The potentially important pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb has been grown by MBE and characterized. Both microstructural and optical evaluation indicate a high degree of structural quality and the potential for future development of novel light-emitting device structures. Metastable zincblende MnTe, for which TEM and X-ray evaluation reveal the presence of only zincblende phases, has been grown by MBE. Single quantum well structures using zincblende MnTe for the barrier layers have been fabricated and found to show strong carrier confinement, further confirming the predicted zincblende MnTe bandgap at 3.2 eV.

  2. ZnTe/MnTe: A new metastable wide gap II VI heterostructure

    NASA Astrophysics Data System (ADS)

    Durbin, S.; Kobayashi, M.; Fu, Qiang; Pelekanos, N.; Gunshor, R. L.; Nurmikko, A. V.

    1990-04-01

    Optical characteristics of a new metastable wide-gap II-VI semiconductor heterostructure ZnTe/MnTe are reported. Single ZnTe/MnTe quantum wells show strong n = 1 exciton resonance manifesting, for example, in pronounced enhancement of the Raman cross-section. Pseudomorphic nature of the structures is inferred from strain induced shifts in the optical phonon spectrum.

  3. Removal of GaAs growth substrates from II-VI semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Bieker, S.; Hartmann, P. R.; Kießling, T.; Rüth, M.; Schumacher, C.; Gould, C.; Ossau, W.; Molenkamp, L. W.

    2014-04-01

    We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet etching and is generally applicable to any II-VI layer stack. We demonstrate the non-invasiveness of the method by transferring an all-II-VI magnetic resonant tunneling diode. High resolution x-ray diffraction proves that the crystal integrity of the heterostructure is preserved. Transport characterization confirms that the functionality of the device is maintained and even improved, which is ascribed to completely elastic strain relaxation of the tunnel barrier layer.

  4. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    DOE PAGESBeta

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles methodmore » can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.« less

  5. Molecular beam epitaxial growth and characterization of Bi{sub 2}Se{sub 3}/II-VI semiconductor heterostructures

    SciTech Connect

    Chen, Zhiyi Zhao, Lukas; Krusin-Elbaum, Lia; Garcia, Thor Axtmann; Tamargo, Maria C.; Hernandez-Mainet, Luis C.; Deng, Haiming

    2014-12-15

    Surfaces of three-dimensional topological insulators (TIs) have been proposed to host quantum phases at the interfaces with other types of materials, provided that the topological properties of interfacial regions remain unperturbed. Here, we report on the molecular beam epitaxy growth of II-VI semiconductor–TI heterostructures using c-plane sapphire substrates. Our studies demonstrate that Zn{sub 0.49}Cd{sub 0.51}Se and Zn{sub 0.23}Cd{sub 0.25}Mg{sub 0.52}Se layers have improved quality relative to ZnSe. The structures exhibit a large relative upward shift of the TI bulk quantum levels when the TI layers are very thin (∼6nm), consistent with quantum confinement imposed by the wide bandgap II-VI layers. Our transport measurements show that the characteristic topological signatures of the Bi{sub 2}Se{sub 3} layers are preserved.

  6. Spectral sensitivity of p-Cu{sub 1.8}S/n{sup -}-ZnS/n-(II-VI) heterostructures

    SciTech Connect

    Komaschenko, V. N. Kolezhuk, K. V.; Yaroshenko, N. V.; Sheremetova, G. I.; Bobrenko, Yu. N.

    2006-03-15

    Photosensitivity of multilayered p-Cu{sub 1.8}S/n{sup -}-(II-VI)/n-(II-VI) heterostructures beyond the fundamental-absorption edge of the wide-gap component is studied experimentally, and a simple model is suggested as an explanation of this photosensitivity. It is established that an effective method for reducing the photosensitivity of the structures beyond the ultraviolet spectral region consists in decreasing the probability of dominant tunneling processes, by increasing the thickness of the wide-gap layer, giving rise to a blocking barrier for photogenerated minority charge carriers. It is shown that the p-Cu{sub 1.8}S/n{sup -}-ZnS/n-CdSe heterostructures are promising for the development of efficient 'solar-blind' detectors of ultraviolet radiation.

  7. Time-resolved optical studies of wide-gap II-VI semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, Hong

    ZnSe and ZnSe-based quantum well and superlattice structures are potential candidates for light emitting devices and other optical devices such as switches and modulators working in the blue-green wavelength range. Carrier dynamics studies of these structures are important in evaluating device performance as well as understanding the underlying physical processes. In this thesis, a carrier dynamics investigation is conducted for temperature from 77K to 295K on CdZnSSe/ZnSSe single quantum well structure (SQW) and ZnSe/ZnSTe superlattice fabricated by molecular beam epitaxy (MBE). Two experimental techniques with femtosecond time resolution are used in this work: up-conversion technique for time- resolved photoluminescence (PL) and pump-probe technique for time-resolved differential absorption studies. For both heterostructures, the radiative recombination is dominated by exciton transition due to the large exciton binding energy as a result of quantum confinement effect. The measured decay time of free exciton PL in CdZnSSe/ZnSSe SQW increases linearly with increasing temperature which agrees with the theoretical prediction by considering the conservation of momentum requirement for radiative recombination. However, the recombination of free carriers is also observed in CdZnSSe/ZnSSe SQW for the whole temperature range studied. On the other hand, in ZnSe/ZnSTe superlattice structures, the non- radiative recombination processes are non-negligible even at 77K and become more important in higher temperature range. The relaxation processes such as spectral hole burning, carrier thermalization and hot-carrier cooling are observed in ZnSe/ZnSTe superlattices at room temperature (295K) by the femtosecond pump-probe measurements. A rapid cooling of the thermalized hot- carrier from 763K to 450K within 4ps is deduced. A large optical nonlinearity (i.e., the induced absorption change) around the heavy-hole exciton energy is also obtained.

  8. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    SciTech Connect

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles method can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.

  9. General synthetic approach to heterostructured nanocrystals based on noble metals and I-VI, II-VI, and I-III-VI metal chalcogenides.

    PubMed

    Liu, Minghui; Zeng, Hua Chun

    2014-08-19

    Solid metal precursors (alloys or monometals) can serve both as a starting template and as a source material for chemical transformation to metal chalcogenides. Herein, we develop a simple solution-based strategy to obtain highly monodisperse noble-metal-based heterostructured nanocrystals from such precursor seeds. By utilizing chemical and structural inhomogeneity of these metal seeds, in this work, we have synthesized a total of five I-VI (Ag2S, Ag2Se, Ag3AuS2, Ag3AuSe2, and Cu9S5), three II-VI (CdS, CdSe, and CuSe), and four I-III-VI (AgInS2, AgInSe2, CuInS2, and CuInSe2) chalcogenides, together with their fifteen associated heterodimers (Au-Ag2S, Au-Ag2Se, Au-Ag3AuS2, Au-Ag3AuSe2, Au-AgInS2, Au-AgInSe2, Au-CdS, Au-CdSe, Ag-Ag2S, Ag-AgInS2, Au-Cu9S5, Au-CuInS2, Au-CuSe, Au-CuInSe2, and Pt-AgInS2) to affirm the process generality. Briefly, by adding elemental sulfur or selenium to AuAg alloy seeds and tuning the reaction conditions, we can readily obtain phase-pure Au-Ag2S, Au-Ag2Se, Au-Ag3AuS2, and Au-Ag3AuSe2 heterostructures. Similarly, we can also fabricate Au-AgInS2 and Au-AgInSe2 heterostructures from the AuAg seeds by adding sulfur/selenium and indium precursors. Furthermore, by partial or full conversion of Ag seeds, we can prepare both single-phase Ag chalcogenide nanocrystals and Ag-based heterostructures. To demonstrate wide applicability of this strategy, we have also synthesized Au-based binary and ternary Cu chalcogenide (Au-Cu9S5, Au-CuSe, Au-CuInS2, and Au-CuInSe2) heterostructures from alloy seeds of AuCu and Pt chalcogenides (e.g., Pt-AgInS2) from alloy seeds of PtAg. The structure and composition of the above products have been confirmed with X-ray diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and energy-dispersive X-ray spectroscopy methods. A kinetic investigation of the formation mechanism of these heterostructures is brought forward using Au-AgInS2 and Ag-CuInS2 as model examples. PMID

  10. Atomic-Scale Characterization of II-VI Compound Semiconductors

    NASA Astrophysics Data System (ADS)

    Smith, David J.

    2013-11-01

    Alloys of II-VI compound semiconductors with suitable band gap selection potentially provide broad coverage of wavelengths for photodetector applications. Achievement of high-quality epitaxial growth is, however, essential for successful development of integrated photonic and optoelectronic devices. Atomic-scale characterization of structural defects in II-VI heterostructures using electron microscopy plays an invaluable role in accomplishing this goal. This paper reviews some recent high-resolution studies of II-VI compound semiconductors with zincblende crystal structure, as grown epitaxially on commonly used substrates. Exploratory studies using aberration-corrected electron microscopes are also briefly considered.

  11. Optical Properties of Silicon-Germanium Superlattices and Wide Band Gap II-Vi Superlattices

    NASA Astrophysics Data System (ADS)

    Rajakarunanayake, Yasantha Nirmal

    This thesis presents the investigation of semiconductor heterostructures for optoelectronic applications, with particular emphasis on band alignment considerations, strain effects, band structure calculations and characterization by optical spectroscopy. The first part of this thesis is concerned with the study of novel optoelectronic properties exhibited by Si/Ge superlattices both in the near infrared (interband transitions) and far infrared (intersubband transitions) energy ranges. The second part of this thesis is concerned with establishing the merits of II-VI semiconductor heterostructures for producing visible light emitters, and investigating techniques to improve the dopability of II-VI semiconductors. In the first part of this thesis we investigate the merits of Si/Ge superlattices for optical applications. We show that the optical absorption/emission strengths for interband transitions in Si/Ge superlattices can be enhanced by six orders of magnitude over pure Si or Ge. We also investigate the intersubband absorption coefficients in doped Si/Ge superlattices. Intersubband transitions in these superlattices make them interesting candidates for long-wavelength infrared detectors. In the second part of this thesis, we describe investigations of II-VI semiconductor heterostructures for visible light emitter applications. We experimentally determine the band offsets for CdTe/ZnTe and ZnSe/ZnTe heterojunctions using optical techniques, and remark on the merits of these heterojunctions for carrier injection. We also analyze the role of external electric fields applied during growth in suppressing self-compensation in II-VI semiconductors. Our results indicate that II-VI doping efficiencies can be dramatically improved if substantial electric fields are applied during growth.

  12. Thermophysical Properties of Selected II-VI Semiconducting Melts

    NASA Technical Reports Server (NTRS)

    Li, C.; Su, Ching-Hua; Lehoczky, S. L.; Scripa, R. N.; Ban, H.; Lin, B.

    2004-01-01

    Thermophysical properties are essential for the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the II-VI semiconductor melts are scarce. This paper reports the results of the temperature dependence of melt density, viscosity and electrical conductivity of selected II-VI compounds, including HgTe, HgCdTe and HgZnTe. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. The results were compared with and showed good agreement with the existing data in the literature.

  13. Chemistry of the Colloidal Group II-VI Nanocrystal Synthesis

    SciTech Connect

    Liu, Haitao

    2007-05-17

    In the last two decades, the field of nanoscience andnanotechnology has witnessed tremendous advancement in the synthesis andapplication of group II-VI colloidal nanocrystals. The synthesis based onhigh temperature decomposition of organometallic precursors has becomeone of the most successful methods of making group II-VI colloidalnanocrystals. This method is first demonstrated by Bawendi and coworkersin 1993 to prepare cadmium chalcogenide colloidal quantum dots and laterextended by others to prepare other group II-VI quantum dots as well asanisotropic shaped colloidal nanocrystals, such as nanorod and tetrapod.This dissertation focuses on the chemistry of this type of nanocrystalsynthesis. The synthesis of group II-VI nanocrystals was studied bycharacterizing the molecular structures of the precursors and productsand following their time evolution in the synthesis. Based on theseresults, a mechanism was proposed to account for the 2 reaction betweenthe precursors that presumably produces monomer for the growth ofnanocrystals. Theoretical study based on density functional theorycalculations revealed the detailed free energy landscape of the precursordecomposition and monomerformation pathway. Based on the proposedreaction mechanism, a new synthetic method was designed that uses wateras a novel reagent to control the diameter and the aspect ratio of CdSeand CdS nanorods.

  14. Chemistry of the Colloidal Group II-VI Nanocrystal Synthesis

    SciTech Connect

    Liu, Haitao

    2007-05-17

    In the last two decades, the field of nanoscience andnanotechnology has witnessed tremendous advancement in the synthesis andapplication of group II-VI colloidal nanocrystals. The synthesis based onhigh temperature decomposition of organometallic precursors has becomeone of the most successful methods of making group II-VI colloidalnanocrystals. This methodis first demonstrated by Bawendi and coworkersin 1993 to prepare cadmium chalcogenide colloidal quantum dots and laterextended by others to prepare other group II-VI quantum dots as well asanisotropic shaped colloidal nanocrystals, such as nanorod and tetrapod.This dissertation focuses on the chemistry of this type of nanocrystalsynthesis. The synthesis of group II-VI nanocrystals was studied bycharacterizing the molecular structures of the precursors and productsand following their time evolution in the synthesis. Based on theseresults, a mechanism was proposed to account for the 2 reaction betweenthe precursors that presumably produces monomer for the growth ofnanocrystals. Theoretical study based on density functional theorycalculations revealed the detailed free energy landscape of the precursordecomposition and monomerformation pathway. Based on the proposedreaction mechanism, a new synthetic method was designed that uses wateras a novel reagent to control the diameter and the aspect ratio of CdSeand CdS nanorods.

  15. Chemistry of the colloidal group II-VI nanocrystal synthesis

    NASA Astrophysics Data System (ADS)

    Liu, Haitao

    In the last two decades, the field of nanoscience and nanotechnology has witnessed tremendous advancement in the synthesis and application of group II-VI colloidal nanocrystals. The synthesis based on high temperature decomposition of organometallic precursors has become one of the most successful methods of making group II-VI colloidal nanocrystals. This method is first demonstrated by Bawendi and coworkers in 1993 to prepare cadmium chalcogenide colloidal quantum dots and later extended by others to prepare other group II-VI quantum dots as well as anisotropic shaped colloidal nanocrystals, such as nanorod and tetrapod. This dissertation focuses on the chemistry of this type of nanocrystal synthesis. The synthesis of group II-VI nanocrystals was studied by characterizing the molecular structures of the precursors and products and following their time evolution in the synthesis. Based on these results, a mechanism was proposed to account for the reaction between the precursors that presumably produces monomer for the growth of nanocrystals. Theoretical study based on density functional theory calculations revealed the detailed free energy landscape of the precursor decomposition and monomer formation pathway. Based on the proposed reaction mechanism, a new synthetic method was designed that uses water as a novel reagent to control the diameter and the aspect ratio of CdSe and US nanorods.

  16. Photothermal spectroscopy of II-VI mixed crystals

    NASA Astrophysics Data System (ADS)

    Zakrzewski, Jacek

    2005-09-01

    Wide gap II-VI semiconducting mixed crystals are extensively studied during the past few years as they are promising candidates for applications in construction photo and electrooptical devices operating in blue-green and UV spectral region. The high degree of covalent bonding of Be chalcogenides leads to increase of their lattice rigidity. For this reason, mixing of Be chalcogenides with other wide gap II-VI binary compounds would increase the resistance of the optoelectronic structure to defect generation and propagation. The photoacoustic spectroscopy has been developed to investigate the thermal and optical properties of semiconductors since it is very sensitive and complementary method to the absorption and photoluminescence spectroscopy. The modified Jackson - Amer model is used to interpret the obtained spectra for the piezoelectric photothermal technique. From the amplitude spectra of the piezoelectric signal, the method enables computation of the optical absorption coefficient spectra and estimation of the energy gap values of the investigated samples. It also enables the determination of the thermal diffusivity values of the samples from the analysis of the piezoelectric phase signal. In special cases, the multi-layer model, developed very recently, can be applied for the interpretation of experimental spectra. The influence of the annealing process of II-VI samples in cation vapor on the amplitude photoacoustic spectra in the saturation region is shown and discussed. The values of the parameter η (efficiency of the nonradiative recombination processes) for both, as grown and annealed crystals were determined and discussed.

  17. Photophysical Properties of II-VI Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Gong, Ke

    As it is well known, semiconductor nanocrystals (also called quantum dots, QDs) are being actively pursued for use in many different types of luminescent optical materials. These materials include the active media for luminescence downconversion in artificial lighting, lasers, luminescent solar concentrators and many other applications. Chapter 1 gives general introduction of QDs, which describe the basic physical properties and optical properties. Based on the experimental spectroscopic study, a semiquantitative method-effective mass model is employed to give theoretical prediction and guide. The following chapters will talks about several topics respectively. A predictive understanding of the radiative lifetimes is therefore a starting point for the understanding of the use of QDs for these applications. Absorption intensities and radiative lifetimes are fundamental properties of any luminescent material. Meantime, achievement of high efficiency with high working temperature and heterostructure fabrication with manipulation of lattice strain are not easy and need systematic investigation. To make accurate connections between extinction coefficients and radiative recombination rates, chapter 2 will consider three closely related aspects of the size dependent spectroscopy of II-VI QDs. First, it will consider the existing literature on cadmium selenide (CdSe) QD absorption spectra and extinction coefficients. From these results and fine structure considerations Boltzmann weighted radiative lifetimes are calculated. These lifetimes are compared to values measured on very high quality CdSe and CdSe coated with zinc selenide (ZnSe) shells. Second, analogous literature data are analyzed for cadmium telluride (CdTe) nanocrystals and compared to lifetimes measured for very high quality QDs. Furthermore, studies of the absorption and excitation spectra and measured radiative lifetimes for CdTe/CdSe Type-II core/shell QDs are reported. These results are also analyzed in

  18. Monolayer II-VI semiconductors: A first-principles prediction

    NASA Astrophysics Data System (ADS)

    Zheng, Hui; Li, Xian-Bin; Chen, Nian-Ke; Xie, Sheng-Yi; Tian, Wei Quan; Chen, Yuanping; Xia, Hong; Zhang, S. B.; Sun, Hong-Bo

    2015-09-01

    A systematic study of 32 honeycomb monolayer II-VI semiconductors is carried out by first-principles methods. While none of the two-dimensional (2D) structures can be energetically stable, it appears that BeO, MgO, CaO, ZnO, CdO, CaS, SrS, SrSe, BaTe, and HgTe honeycomb monolayers have a good dynamic stability. The stability of the five oxides is consistent with the work published by Zhuang et al. [Appl. Phys. Lett. 103, 212102 (2013), 10.1063/1.4831972]. The rest of the compounds in the form of honeycomb are dynamically unstable, revealed by phonon calculations. In addition, according to the molecular dynamic (MD) simulation evolution from these unstable candidates, we also find two extra monolayers dynamically stable, which are tetragonal BaS [P 4 /n m m (129 ) ] and orthorhombic HgS [P 21/m (11 ) ] . The honeycomb monolayers exist in the form of either a planar perfect honeycomb or a low-buckled 2D layer, all of which possess a band gap and most of them are in the ultraviolet region. Interestingly, the dynamically stable SrSe has a gap near visible light, and displays exotic electronic properties with a flat top of the valence band, and hence has a strong spin polarization upon hole doping. The honeycomb HgTe has recently been reported to achieve a topological nontrivial phase under appropriate in-plane tensile strain and spin-orbital coupling (SOC) [J. Li et al., arXiv:1412.2528]. Some II-VI partners with less than 5 % lattice mismatch may be used to design novel 2D heterojunction devices. If synthesized, potential applications of these 2D II-VI families could include optoelectronics, spintronics, and strong correlated electronics.

  19. Activation of shallow dopants in II-VI compounds

    SciTech Connect

    Walukiewicz, W.

    1995-08-01

    The amphoteric native defect model is applied to the understanding of the variations in the dopant activation efficiency in II-VI compounds. It is shown that the location of the common energy reference, the Fermi level stabilization energy, relative to the band edges can be used to determine the doping induced reduction of the formation energy and the enhancement of the concentration of compensating native defects. The model is applied to the most extensively studied compound semiconductors as well as to ternary and quaternary alloys. The effects of the compound ionicity on the dopant activation are briefly discussed.

  20. Large area radiation detectors based on II VI thin films

    NASA Astrophysics Data System (ADS)

    Quevedo-Lopez, Manuel

    2015-03-01

    The development of low temperature device technologies that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible, low metal content, sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, neutron/gamma-ray/x-ray detectors, etc. In this talk, our efforts to develop novel CMOS integration schemes, circuits, memory, sensors as well as novel contacts, dielectrics and semiconductors for flexible electronics are presented. In particular, in this presentation we discuss fundamental materials properties including crystalline structure, interfacial reactions, doping, etc. defining performance and reliability of II-VI-based radiation sensors. We investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. Besides II-VI materials, we also evaluated several diode materials, Si, CdTe,GaAs, C (diamond), and ZnO, and two neutron converter materials,10B and 6LiF. We determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.

  1. AX centers in II-VI semiconductors: Hybrid functional calculations

    NASA Astrophysics Data System (ADS)

    Biswas, Koushik; Du, Mao-Hua

    2012-02-01

    Group-V acceptors should be efficient hole producers in II-VI compounds as in ZnTe. However, good p-type conductivity remains elusive, for example in ZnO and ZnS. With regard to this low doping efficiency, we will discuss the dopant self-compensation in II-VI semiconductors through the formation of the AX center. These are acceptor-induced defect that acts as a donor to compensate the acceptor itself. We show that the artificially high valence band maximum in Local density approximation and Generalized gradient approximation calculations can lead to incorrect prediction on the stability of the AX center in these semiconductors. The hybrid functional calculations that correct the band gap, significantly stabilize the AX centers for selected group-V acceptor dopants in ZnO, ZnS, and ZnSe. The results on AX centers obtained by hybrid functional calculations agree well with the experimentally observed doping phenomena in ZnS and ZnSe.[1] [1] Koushik Biswas and Mao-Hua Du, Applied Physics Letters 98, 181913 (2011).

  2. II-VI Materials-Based High Performance Intersubband Devices

    NASA Astrophysics Data System (ADS)

    Ravikumar, Arvind Pawan

    Mid-infrared (mid-IR) light is of vital technological importance because of its application in trace-gas absorption spectroscopy, imaging, free-space communication or infrared countermeasures. Thus the ability to generate and detect mid-IR light at low cost and preferably, at room temperature is of utmost importance. High performance quantum cascade (QC) lasers - mid-IR light sources based on optical transitions in thin quantum wells, and intersubband infrared detectors - namely the quantum well infrared photodetectors (QWIPs) and quantum cascade detectors (QCDs), have rapidly advanced, due to excellent material quality of III-V materials. In spite of this tremendous success, there lie challenges such as lack of efficient short-wavelength emitters or broadband detectors - challenges that arise from intrinsic materials properties. As a central theme in this thesis, we look at a new class of materials, the II-VI based ZnCdSe/ZnCdMgSe system, to close technological gaps and develop high performance infrared light sources and detectors in the entire mid-IR regime. To that end, we first demonstrate the flexibility that the combination of II-VI materials and band structure engineering allows by developing various QWIPs, QCDs and QC emitters at different wavelengths, not easily achieved by other materials. The performance of these first-of-their-kind detectors is already comparable to existing commercial solutions. To fully realize the potential of this new material system, we also developed a room-temperature broadband infrared detector detecting between 3 and 6 mum with record responsivity. With this technology, it is now possible to monolithically integrate high performance mid-IR lasers and detectors for on-chip applications. One of the challenges with all intersubband detectors is that they do not absorb normally incident light, like most conventional detectors. In order to make intersubband detectors attractive to commercial exploration, we develop a novel method to

  3. 77 FR 27081 - II-VI, Incorporated, Infrared Optics-Saxonburg Division, Saxonburg, Pennsylvania; Notice of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-08

    ... was published in the Federal Register on February 14, 2012 (77 FR 8281). The workers were engaged in... Employment and Training Administration II-VI, Incorporated, Infrared Optics--Saxonburg Division, Saxonburg... former workers of II-VI, Incorporated, Infrared Optics--Saxonburg Division, Saxonburg,...

  4. Development of novel II-VI solar cells. Final report

    SciTech Connect

    Tompa, G.S.

    1990-11-01

    The epitaxial growth of novel II-VI solar cell structures was investigated. In Phase I, the metal organic chemical vapor deposition (MOCVD) process parameters and associated growth chemistries for an epitaxial p-i-n, ZnTe/CdTe/GaAs, solar cell structure were developed. No doping was attempted in the Phase I effort. The solar cell structure was grown as a continuous structure within a single process reactor. Film thickness, compositional uniformity, and electrical properties were measured. A test solar cell was not fabricated because the material was too highly resistive to produce a useful solar cell. This high resistivity is characteristic of very pure ZnTe and CdTe material. The feasibility of this structure was demonstrated, providing a foundation for the development of a functional solar cell, by optimizing the cell structure and growth processes and by developing doping techniques.

  5. FTIR Spectroscopic Characterization Of II-VI Semiconductors

    NASA Technical Reports Server (NTRS)

    Perry, G. L. E.; Szofran, F. R.

    1991-01-01

    Combination of commercial Fourier-transform infrared (FTIR) spectrometer with computer and special-purpose software constitutes highly automated facility for acquisition and processing of infrared transmission or reflection spectral image data. Intended principally to acquire transmission spectra of some compounds of elements in groups II and VI of periodic table. System used to characterize specimens of II/VI alloy semiconductors grown by directional solidification and quenching. Transmission-edge maps helpful in studies of flows, gradients of temperature, and coefficients of diffusion in solidifying melts. Data acquired by system include optical characteristics, and they both verify and complement data obtained by such other techniques as measurements of density and x-ray-dispersion analysis.

  6. Chemical bath deposition of II-VI compound thin films

    NASA Astrophysics Data System (ADS)

    Oladeji, Isaiah Olatunde

    II-VI compounds are direct bandgap semiconductors with great potentials in optoelectronic applications. Solar cells, where these materials are in greater demand, require a low cost production technology that will make the final product more affordable. Chemical bath deposition (CBD) a low cost growth technique capable of producing good quality thin film semiconductors over large area and at low temperature then becomes a suitable technology of choice. Heterogeneous reaction in a basic aqueous solution that is responsible for the II-VI compound film growth in CBD requires a metal complex. We have identified the stability constant (k) of the metal complex compatible with CBD growth mechanism to be about 106.9. This value is low enough to ensure that the substrate adsorbed complex relax for subsequent reaction with the chalcogen precursor to take place. It is also high enough to minimize the metal ion concentration in the bath participating in the precipitation of the bulk compounds. Homogeneous reaction that leads to precipitation in the reaction bath takes place because the solubility products of bulk II-VI compounds are very low. This reaction quickly depletes the bath of reactants, limit the film thickness, and degrade the film quality. While ZnS thin films are still hard to grow by CBD because of lack of suitable complexing agent, the homogeneous reaction still limits quality and thickness of both US and ZnS thin films. In this study, the zinc tetraammine complex ([Zn(NH3) 4]2+) with k = 108.9 has been forced to acquire its unsaturated form [Zn(NH3)3]2+ with a moderate k = 106.6 using hydrazine and nitrilotriacetate ion as complementary complexing agents and we have successfully grown ZnS thin films. We have also, minimized or eliminated the homogeneous reaction by using ammonium salt as a buffer and chemical bath with low reactant concentrations. These have allowed us to increase the saturation thickness of ZnS thin film by about 400% and raise that of US film

  7. Multi-crystalline II-VI based multijunction solar cells and modules

    SciTech Connect

    Hardin, Brian E.; Connor, Stephen T.; Groves, James R.; Peters, Craig H.

    2015-06-30

    Multi-crystalline group II-VI solar cells and methods for fabrication of same are disclosed herein. A multi-crystalline group II-VI solar cell includes a first photovoltaic sub-cell comprising silicon, a tunnel junction, and a multi-crystalline second photovoltaic sub-cell. A plurality of the multi-crystalline group II-VI solar cells can be interconnected to form low cost, high throughput flat panel, low light concentration, and/or medium light concentration photovoltaic modules or devices.

  8. Close-spaced vapor transport of II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Perrier, Gerard

    1991-12-01

    The close spaced vapor transport (CSVT) is an efficient and cost-effective technique that allows the growth of polycrystalline as well as epitaxial thin layers of semiconductors. It has been applied to II-VI materials, especially to zinc and cadmium chalcogenides. A summary table including the deposition parameters, i.e., the nature of the ambient gas, the temperature of the source, the temperature difference between source and substrate, and the values of the growth rates measured on various substrates is presented for ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe. Experimental results concerning the growth of ZnSe on GaAs substrates are also reported. The CSVT system uses an Ar atmosphere and the working temperature is ca. 825 degree(s)C. The temperatures of source and substrate are measured during deposition and growth rates of the ZnSe films are studied as a function of the reciprocal temperature of the substrate surface for GaAs and quartz (inert) substrates. The measured values of the growth rate are compared to the theoretical ones given by the reaction-limited model and the diffusion-limited model. The validity of the models is discussed in terms of the nature of the molecules participating in the transport.

  9. Phase Diagrams and Electronic Structure of II-VI Alloys

    NASA Astrophysics Data System (ADS)

    de Gironcoli, Stefano

    1998-03-01

    Among II-VI wide-gap semiconductor solid solutions, Zn_xMg_1-xS_ySe_1-y alloy is the most studied for its potential applications in the blue-green light-emitter technology. In spite of this enormous technological interest little is known about its fundamental thermodynamical and structural properties. In this work the structural and thermodynamical properties of the Zn_xMg_1-xS_ySe_1-y solid solutions are determined by a combination of the computational alchemy (S. de Gironcoli, P. Giannozzi, and S. Baroni, Phys. Rev. Lett. 66), 2116 (1991); N. Marzari, S. de Gironcoli, and S. Baroni, Phys. Rev. Lett. 72, 4001 (1994). and the cluster expansion (S.-H. Wei, L. G. Ferreira, and A. Zunger, Phys. Rev. B 41), 8240 (1990). methods with Monte Carlo simulations. We determine the phase diagram of the alloy and show that the system is completely mixible at the tipical growth temperatures and phase separates at lower temperatures into two or three phases. The homogeneous phase is characterized by a large amount of short-range order occurring among first-nearest neighbors. Electronic-structure calculations, performed extending the special quasi-random structures approach (A. Zunger, S.-H. Wei, L. G. Ferreira, and J. E. Bernard, Phys. Rev. Lett. 65), 353 (1990). to the quaternary alloy case, indicate that the energy gap of the alloy is rather sensitive to this short-range order.

  10. Equilibrium composition in II?VI telluride MOCVD systems

    NASA Astrophysics Data System (ADS)

    Ben-Dor, L.; Greenberg, J. H.

    1999-03-01

    Thermodynamic calculations, or computer simulation of the equilibrium composition, offer an excellent possibility to reduce drastically the elaborate trial-and-error experimental efforts of finding the optimal preparation conditions for MOCVD processes (temperature T, pressure P, initial composition of the vapors X), to limit them only to the P- T- X field of existence of the solid to be prepared and an acceptable yield of the product. In this communication equilibrium composition was investigated for MOCVD processes of CdTe, ZnTe, HgTe and solid solutions Cd xZn 1- xTe and Hg xCd 1- xTe. A number of volatile organometallic compounds have been used as precursors for MOCVD growth. These are dimethylcadmium (CH 3) 2Cd, DMCd; diethylzinc (C 2H 5) 2Zn, DEZn; diisopropylzinc [CH(CH 3) 2] 2Zn, DiPZn; diethyltellurium (C 2H 5) 2Te, DETe; diisopropyltellurium [CH(CH 3) 2] 2Te, DiPTe; methylallyltellurium CH 3TeCH 2CHCH 2, MATe. A choice of the particular combination of the precursors largely depends on the desired composition of the film to be prepared, especially in cases of solid solutions Cd xZn 1- xTe and Hg xCd 1- xTe where the vapor pressure of the precursors is instrumental for the composition of the vapor in the reaction zone and, ultimately, for the composition x of the solid solution. Equilibrium composition for II-VI telluride MOCVD systems was investigated at temperatures up to 873 K in hydrogen and inert gas atmospheres at pressures up to 1 atm. P- T- X regions of existence were outlined for each of the five materials.

  11. MBE of wide bandgap II-VI compounds

    NASA Astrophysics Data System (ADS)

    Gunshor, R. L.; Kobayashi, M.; Kolodziejski, L. A.; Otsuka, N.; Nurmikko, A. V.

    1990-01-01

    A pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb, having potential for the development of novel visible light emitting injection devices, has been grown by MBE. A variety of microstructural and optical evaluation techniques have provided evidence of high structural quality. The nonequilibrium growth capability of the MBE technique has enabled the growth of heterostructures incorporating a previously hypothetical widegap magnetic semiconductor, the zincblende phase of MnTe. Electron diffraction measurements of cross-sectional samples reveal only zincblende phases. Double barrier structures incorporating zincblende MnTe are found to exhibit two-dimensional electron and hole confinement in CdTe and ZnTe quantum well layers, and serve to confirm the zincblende MnTe bandgap at 3.2 eV.

  12. Spectroscopic characterization of iron-doped II-VI compounds for laser applications

    NASA Astrophysics Data System (ADS)

    Martinez, Alan

    The middle Infrared (mid-IR) region of the electromagnetic spectrum between 2 and 15 ?m has many features which are of interest to a variety of fields such as molecular spectroscopy, biomedical applications, industrial process control, oil prospecting, free-space communication and defense-related applications. Because of this, there is a demand for broadly tunable, laser sources operating over this spectral region which can be easily and inexpensively produced. II-VI semiconductor materials doped with transition metals (TM) such as Co 2+, Cr2+, or Fe2+ exhibit highly favorable spectroscopic characteristics for mid-IR laser applications. Among these TM dopants, Fe2+ has absorption and emission which extend the farthest into the longer wavelength portion of the mid-IR. Fe2+:II-VI crystals have been utilized as gain elements in laser systems broadly tunable over the 3-5.5 microm range [1] and as saturable absorbers to Q -switch [2] and mode-lock [3] laser cavities operating over the 2.7-3 microm. TM:II-VI laser gain elements can be fabricated inexpensively by means of post-growth thermal diffusion with large homogeneous dopant concentration and good optical quality[4,5]. The work outlined in this dissertation will focus on the spectroscopic characterization of TM-doped II-VI semiconductors. This work can be categorized into three major thrusts: 1) the development of novel laser materials, 2) improving and extending applications of TM:II-VI crystals as saturable absorbers, and 3) fabrication of laser active bulk crystals. Because current laser sources based on TM:II-VI materials do not cover the entire mid-IR spectral region, it is necessary to explore novel laser sources to extend available emissions toward longer wavelengths. The first objective of this dissertation is the spectroscopic characterization of novel ternary host crystals doped with Fe2+ ions. Using crystal field engineering, laser materials can be prepared with emissions placed in spectral regions not

  13. 77 FR 21586 - II-VI, Incorporated, Infrared Optics-Saxonburg Division, Saxonburg, PA; Notice of Affirmative...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-10

    ... was published in the Federal Register on February 14, 2012 (77 FR 8281). The workers were engaged in... Employment and Training Administration II-VI, Incorporated, Infrared Optics--Saxonburg Division, Saxonburg... former workers of II-VI, Incorporated, Infrared Optics--Saxonburg Division, Saxonburg,...

  14. Modulated Binary-Ternary Dual Semiconductor Heterostructures.

    PubMed

    Prusty, Gyanaranjan; Guria, Amit K; Mondal, Indranil; Dutta, Anirban; Pal, Ujjwal; Pradhan, Narayan

    2016-02-18

    A generic modular synthetic strategy for the fabrication of a series of binary-ternary group II-VI and group I-III-VI coupled semiconductor nano-heterostructures is reported. Using Ag2 Se nanocrystals first as a catalyst and then as sacrificial seeds, four dual semiconductor heterostructures were designed with similar shapes: CdSe-AgInSe2 , CdSe-AgGaSe2 , ZnSe-AgInSe2 , and ZnSe-AgGaSe2 . Among these, dispersive type-II heterostructures are further explored for photocatalytic hydrogen evolution from water and these are observed to be superior catalysts than the binary or ternary semi-conductors. Details of the chemistry of this modular synthesis have been studied and the photophysical processes involved in catalysis are investigated. PMID:26800297

  15. X-ray absorption fine structure and X-ray excited optical luminescence studies of II-VI semiconducting nanostructures

    NASA Astrophysics Data System (ADS)

    Murphy, Michael Wayne

    2010-06-01

    Various II-VI semiconducting nanomaterials such as ZnO-ZnS nanoribbons (NRs), CdSxSe1-x nanostructures, ZnS:Mn NRs, ZnS:Mn,Eu nanoprsims (NPs), ZnO:Mn nanopowders, and ZnO:Co nanopowders were synthesized for study. These materials were characterized by techniques such as scanning electron microscopy, transmission electron microscopy, element dispersive X-ray spectroscopy, selected area electron diffraction, and X-ray diffraction. The electronic and optical properties of these nanomaterials were studied by X-ray absorption fine structure (XAFS) spectroscopy and X-ray excited optical luminescence (XEOL) techniques, using tuneable soft X-rays from a synchrotron light source. The complementary nature ofthe XAFS and XEOL techniques give site, element and chemical specific measurements which allow a better understanding of the interplay and role of each element in the system. Chemical vapour deposition (CVD) of ZnS powder in a limited oxygen environment resulted in side-by-side biaxial ZnO-ZnS NR heterostructures. The resulting NRs contained distinct wurtzite ZnS and wurtzite ZnO components with widths of 10--100 nm and 20 --500 nm, respectively and a uniform interface region of 5-15 nm. XAFS and XEOL measurements revealed the luminescence of ZnO-ZnS NRs is from the ZnO component. The luminescence of CdSxSe1-x nanostructures is shown to be dependent on the S to Se ratio, with the band-gap emission being tunable between that of pure CdS and CdSe. Excitation of the CdSxSe 1-x nanostructures by X-ray in XEOL has revealed new de-excitation channels which show a defect emission band not seen by laser excitation. CVD of Mn2+ doped ZnS results in nanostructures with luminescence dominated by the yellow Mn2+ emission due to energy transfer from the ZnS host to the Mn dopant sites. The addition of EuCl3 to the reactants in the CVD process results in a change in morphology from NR to NP. Zn1-xMnxO and Zn1-xCOxO nanopowders were prepared by sol-gel methods at dopant concentrations

  16. Novel diffusions of interstitial atoms in II-VI compounds zinc selenide

    NASA Astrophysics Data System (ADS)

    Chen, Li An; Jiang, En Hai; Zhu, Xing Feng; Chen, Ling Fu

    2015-04-01

    The diffusion plays an important role in many applications when the impurities are employed to tune the semiconductor's electrical or optical properties, which make it essential to understand theoretically the microscopic mechanisms governing how dopant defects diffuse. Using first-principles calculations, we compare the diffusion behaviors and migration barriers of interstitial Cu, Ag, and Au atoms in II-VI compounds ZnSe. We consider interstitial diffusion mechanisms and calculate the corresponding activation energies. For noble atoms, we find that the interstitial mediated mechanism is the dominant one. We also find that the relative size of dopant atoms and constituent atoms of II-VI compounds is an important factor affecting the diffusion behaviors. The coupling in ZnSe between Cu d levels and unoccupied host s levels is not as strong as that in CdTe.

  17. Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process

    DOEpatents

    Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

    2001-01-01

    A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  18. Self-interaction and relaxation-corrected pseudopotentials for II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Vogel, Dirk; Krüger, Peter; Pollmann, Johannes

    1996-08-01

    We report the construction of pseudopotentials that incorporate self-interaction corrections and electronic relaxation in an approximate but very efficient, physically well-founded, and mathematically well-defined way. These potentials are particularly useful for II-VI compounds which are distinguished by their highly localized and strongly bound cationic semicore d electrons. Self-interaction corrections to the local-density approximation (LDA) of density-functional theory are accounted for in the solids to a significant degree by constructing appropriate self-interaction-corrected (SIC) pseudopotentials that take atomic SIC contributions into account. In this way translational symmetry of the Hamiltonian is preserved. Without increasing the complexity of the numerical calculations we approximately account, in addition, for electronic relaxation in the solids by incorporating into our pseudopotentials relevant relaxation in the involved atoms. By this construction we arrive at very useful self-interaction and relaxation-corrected pseudopotentials and effective one-particle Hamiltonians which constitute the basis for ab initio LDA calculations yielding significant improvements in electronic properties of II-VI compound semiconductors and their surfaces. The procedure is computationally not more involved than any standard LDA calculation and, nevertheless, overcomes to a large extent the well-known shortcomings of ``state of the art'' LDA calculations employing standard pseudopotentials. Our results for electronic and structural properties of II-VI compounds agree with a whole body of experimental data.

  19. Crystal-Phase Control by Solution-Solid-Solid Growth of II-VI Quantum Wires.

    PubMed

    Wang, Fudong; Buhro, William E

    2016-02-10

    A simple and potentially general means of eliminating the planar defects and phase alternations that typically accompany the growth of semiconductor nanowires by catalyzed methods is reported. Nearly phase-pure, defect-free wurtzite II-VI semiconductor quantum wires are grown from solid rather than liquid catalyst nanoparticles. The solid-catalyst nanoparticles are morphologically stable during growth, which minimizes the spontaneous fluctuations in nucleation barriers between zinc blende and wurtzite phases that are responsible for the defect formation and phase alternations. Growth of single-phase (in our cases the wurtzite phase) nanowires is thus favored. PMID:26731426

  20. Self-organized MBE growth of II VI epilayers on patterned GaSb substrates

    NASA Astrophysics Data System (ADS)

    Wissmann, H.; Tran Anh, T.; Rogaschewski, S.; von Ortenberg, M.

    1999-05-01

    We report on the self-organized MBE growth of II-VI epilayers on patterned and unpatterned GaSb substrates resulting in quantum wires and quantum wells, respectively. The HgSe : Fe quantum wires were grown on (0 0 1)GaSb substrates with a buffer of lattice-matched ZnTe 1- xSe x. Due to the anisotropic growth of HgSe on the A-oriented stripes roof-like overgrowth with a definite ridge was obtained. Additional Fe doping in the direct vicinity of the ridge results in a highly conductive quantum wire.

  1. Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Zhu, Shen; Li, Chao; Scripa, R.; Lehoczky, Sandra L.; Kim, Y. W.; Baird, J. K.; Lin, B.; Ban, Heng; Benmore, Chris

    2003-01-01

    The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. It has long been recognized that liquid Te presents a unique case having properties between those of metals and semiconductors. The electrical conductivity for Te melt increases rapidly at melting point, indicating a semiconductor-metal transition. Te melts comprise two features, which are usually considered to be incompatible with each other: covalently bound atoms and metallic-like behavior. Why do Te liquids show metallic behavior? is one of the long-standing issues in liquid metal physics. Since thermophysical properties are very sensitive to the structural variations of a melt, we have conducted extensive thermophysical measurements on Te melt.

  2. Structural Fluctuation and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    2003-01-01

    The objectives of the project is to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs and to study the fundamental heterophase fluctuations phenomena in these melts by: 1) Conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts such as viscosity, electrical conductivity, thermal diffusivity and density as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) Performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. A relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the sample, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed similar relaxation behavior as the measured diffusivity. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed better resolution than previous reported.

  3. Fracto-mechanoluminescence induced by impulsive deformation of II-VI semiconductors.

    PubMed

    Tiwari, Ratnesh; Dubey, Vikas; Ramrakhiani, Meera; Chandra, B P

    2015-09-01

    When II-VI semiconductors are fractured, initially the mechanoluminescence (ML) intensity increases with time, attains a maximum value Im at a time tm, at which the fracture is completed. After tm, the ML intensity decreases with time, Im increase linearly with the impact velocity v0 and IT initially increase linearly with v0 and then it attains a saturation value for a higher value of v0. For photoluminescence, the temperature dependence comes mainly from luminescence efficiency, ηo; however, for the ML excitation, there is an additional factor, rt dependent on temperature. During fracture, charged dislocations moving near the tip of moving cracks produce intense electric field, causes band bending. Consequently, tunneling of electrons from filled electron traps to the conduction band takes place, whereby the radiative electron-hole recombination give rise to the luminescence. In the proposed mechanism, expressions are derived for the rise, the time tm corresponding to the ML intensity versus time curve, the ML intensity Im corresponding to the peak of ML intensity versus time curve, the total fracto-mechanoluminescence (FML) intensity IT, and fast and slow decay of FML intensity of II-VI semiconductors. The FML plays a significant role in understanding the processes involved in biological detection, earthquake lights and mine failure. PMID:25669489

  4. Photoluminescence quantum efficiency of various ternary II VI semiconductor solid solutions

    NASA Astrophysics Data System (ADS)

    Westphäling, R.; Bauer, S.; Klingshirn, C.; Reznitstsky, A.; Verbin, S.

    1998-02-01

    As a result of the spatial localization of excitons in II-VI mixed crystals the external luminescence quantum efficiency η lum is expected to be remarkably higher than in the corresponding binary compounds. To investigate this assumption we built a new experimental setup with a miniature integrating sphere fitted into a cryostat. At low temperatures in the binary systems CdS and CdSe we always found η lum ⩽ 25% in the main luminescence bands (arising from bound excitons (D 0X, A 0X) and donor—acceptor pair recombination). For the free-exciton luminescence η lum was more than two orders of magnitude less. In contrast, CdS 1- xSe x mixed crystals show η lum up to 70% in the luminescence from localized states, indicating that the nonradiative recombination is strongly suppressed for localized excitons. Other II-VI alloys (ZnSe 1- xTe x Zn 1- xCd xS and Zn 1- xCd xSe) show partly considerably lower values for η lum. The temperature dependence of η lum gives information about various activation processes to nonradiative recombination channels.

  5. Threshold in electron-beam end-pumped II-VI lasers

    NASA Astrophysics Data System (ADS)

    Colak, S.; Khurgin, J.; Seemungal, W.; Hebling, A.

    1987-10-01

    Electron-beam end-pumped lasers from different bulk-grown II-VI compounds have been experimentally studied and compared under similar preparation and excitation conditions. The first results on electron-beam pumped CdMnTe lasers and end-pumped CdTe lasers are reported. The order of lowest to highest threshold is found to be from CdSe, ZnCdSe, CdS, CdTe, CdMnTe, and ZnSe. The comparisons between lasing conditions are used to evaluate the contribution of the intrinsic semiconductor parameters to lasing threshold. Experiments with a large number of samples indicate that the influence of intrinsic and extrinsic parameters on lasing threshold are in most cases comparable. Therefore, for most bulk II-VI lasers, the average threshold pump power density reductions with the elimination of extrinsic factors are expected to be less than several times. These findings are further supported by threshold and relative slope efficiency measurements on lasers with different output mirror couplings.

  6. Orientation-patterned II-VI semiconductor waveguides for quasi-phasematched nonlinear optics

    NASA Astrophysics Data System (ADS)

    Angell, Marilyn Joy

    1999-10-01

    The ability to grow epitaxial layers of II-VI compound semiconductors on GaAs substrates, the transparency of these materials to a broad range of visible wavelengths, and their strong second order susceptibility suggest that these materials should be promising for efficient nonlinear frequency conversion by on-chip integration with III-V pump lasers. This work investigates the use of semiconductor microfabrication techniques to create II-VI waveguides with laterally-patterned crystal orientation for quasi-phasematched second harmonic generation. The fabrication of periodically-patterned <100>/<111> CdTe on <100> GaAs substrates, using epitaxial growth by metalorganic chemical vapor deposition and a lithographic patterning process, is demonstrated. This process is adapted to create ZnTe/ZnSe waveguides with periodic lateral patterning of the crystal orientation. The optical properties of planar waveguides with orientation-patterned ZnTe core layers are characterized. Second harmonic generation is measured, but does not appear to be quasi-phasematched at the test wavelength. High optical losses are observed in the patterned waveguides, and the mechanism of the loss is investigated using X-ray diffractometry, atomic force microscopy, and angle-resolved scatterometry. These measurements suggest that the losses are primarily due to bulk defects in the <111>-oriented material. Waveguide patterning using <100>-oriented anti-phase domains, which have a single axis of crystal growth, is recommended in order to overcome this problem.

  7. Electrical and optical investigation on doping of II-VI compounds using radioactive isotopes

    NASA Astrophysics Data System (ADS)

    Wienecke, Marion

    2000-12-01

    Using radioactive isotopes of shallow dopants (Ag, As, Rb) as well as of native or isoelectronic elements (Se, Te, Cd, Sr) which were incorporated as host atoms and then transmuted into relevant dopants (transmutation doping) we investigated doping phenomena occurring in the wide band gap II-VI compounds CdTe, ZnTe, ZnSe and SrS by the classical methods of semiconductor physics: Hall effect, C-V and photoluminescence measurements. Thus, we could assign unambiguously defect features in electrical and photoluminescence measurements to extrinsic dopants by means of the half lives of radioactive decay. In As doped ZnSe samples we observed two states: a metastable effective mass like state and a deep state. The occurrence of the latter state is always linked with the high resistivity of As doped ZnSe crystals. The transmutation doping experiments reveal that the so-called self-compensation typical for wide band gab II-VI compounds can be overcome when the thermal treatment for dopant incorporation is time separated from its electrical activation, achieved using transmutation at room temperature. Under these conditions we found an almost one-to-one doping efficiency relative to the implanted dose. Thus, these investigations are a contribution to understanding compensation phenomena occurring due to interactions between dopants and native defects during conventional doping treatments.

  8. Bulk Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua

    1997-01-01

    The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.

  9. Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Sha, Yi-Gao

    1995-01-01

    The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

  10. Anion vacancies in II-VI chalcogenides: Review and critical analysis

    NASA Astrophysics Data System (ADS)

    Babentsov, V.; James, R. B.

    2013-09-01

    We performed critical analysis and comparison of all EPR, photo-EPR, photosensitive optical absorption, photoluminescence, and photoconductivity data taken on various Zn- and Cd-related II-VI chalcogenides compounds, such as ZnO, ZnS, ZnSe, and ZnTe, and CdS, CdSe, and CdTe. We developed a scheme for the electronic transitions and recombination associated with anion vacancies that is common for all these materials. This scheme explains all known facts obtained to date on quenching and excitation of the EPR signal, optical absorption, photoluminescence and photoconductivity. Based on these data we determined that the location of the energy level of the singly charged anion vacancy, VA+, is nearly equal for Zn-related II-VI materials (EC-1.0 eV) and EC+0.8 eV for Cd-related materials. For Cd-related chalcogenides most of the data were derived only from photoluminescence- and photoconductivity-spectra, so based on the available data, the position of the energy level of a singly charged anion vacancy in these materials was determined not so convincingly. Nonetheless, these materials have attracted much interest for decades because of their industrial applications as luminescent devices, laser filters and other optical elements, infrared, visible- and (X) γ-ray-detectors, solar cells, and the like.

  11. Strong confinement effects in CdTe/MnTe quantum wells: A new strained layer binary II VI heterostructure

    NASA Astrophysics Data System (ADS)

    Fu, Q.; Pelekanos, N.; Nurmikko, A. V.; Durbin, S.; Han, J.; Sungki, O.; Menke, D.; Kobayashi, M.; Gunshor, R. L.

    1990-04-01

    A range of optical studies have been carried out on a series of single quantum wells of CdTe/MnTe. The structures appear to be nearly pseudomorphic and show evidence for robust electron-hole confinement. Exciton states have been characterized in terms of lifetime and coupling to optical phonons.

  12. Boîtes quantiques II-VI comme sources de photons uniques

    NASA Astrophysics Data System (ADS)

    Couteau, C.; Moehl, S.; Tinjod, F.; Suffczynski, J.; Romestain, R.; Vial, J.-C.; Gérard, J.-M.; Kheng, K.; Poizat, J.-P.

    2004-11-01

    Dans le cadre de l'information et de la communication quantique, la nécessité d'avoir des photons uniques monomodes et à la demande se révèle cruciale. De récents travaux théoriques ont montré la possibilité de réaliser des portes logiques quantiques n'utilisant que de l'optique linéaire. C'est dans ce contexte que s'insère notre travail sur l'élaboration et l'utilisation de boîtes quantiques semi-conductrices II-VI comme “pistolet” à photons. Des expériences de dégroupement et d'interférences à 2 photons sont les premiers pas nécessaires pour caractériser notre source.

  13. Characterization of convection related defects in II-VI compound semiconductors

    NASA Technical Reports Server (NTRS)

    Witt, August F.

    1993-01-01

    The research carried out under NAG8-913, 'Characterization of Convection Related Defects in II-VI Compound Semiconductors', was aimed at exploration of the potential of axial magnetic fields for melt stabilization when applied in Bridgman geometry to the growth of HgMnTe. The thrust of the work was directed at the experimental establishment of the limits of magnetic melt stabilization during crystal growth and at the analytical verification of the effects of stabilization on critical materials properties. The data obtained indicate noticeable stabilization effects, particularly as far as the formation of microscopic compositional inhomogeneities is concerned. The effects of magnetic fields on precipitate formation are found to be minor. Magnetic field effects were investigated for both 'Bridgman' and 'travelling heater' geometries. The research was conducted during the period from May 22 to September 30, 1992.

  14. Relaxation and coherent oscillations in the spin dynamics of II-VI diluted magnetic quantum wells

    NASA Astrophysics Data System (ADS)

    Ungar, F.; Cygorek, M.; Tamborenea, P. I.; Axt, V. M.

    2015-10-01

    We study theoretically the ultrafast spin dynamics of II-VI diluted magnetic quantum wells in the presence of spin-orbit interaction. We extend a recent study where it was shown that the spin-orbit interaction and the exchange sd coupling in bulk and quantum wells can compete resulting in qualitatively new dynamics when they act simultaneously. We concentrate on Hg1-x-yMnxCdyTe quantum wells, which have a highly tunable Rashba spin-orbit coupling. Our calculations use a recently developed formalism which incorporates electronic correlations originating from the exchange sd-coupling. We find that the dependence of electronic spin oscillations on the excess energy changes qualitatively depending on whether or not the spin-orbit interaction dominates or is of comparable strength with the sd interaction.

  15. Phase transitions in Group III-V and II-VI semiconductors at high pressure

    NASA Technical Reports Server (NTRS)

    Yu, S. C.; Liu, C. Y.; Spain, I. L.; Skelton, E. F.

    1979-01-01

    The structures and transition pressures of Group III-V and II-VI semiconductors and of a pseudobinary system (Ga/x/In/1-x/Sb) have been investigated. Results indicate that GaP, InSb, GaSb, GaAs and possible AlP assume Metallic structures at high pressures; a tetragonal, beta-Sn-like structure is adopted by only InSb and GaSb. The rocksalt phase is preferred in InP, InAs, AlSb, ZnO and ZnS. The model of Van Vechten (1973) gives transition pressures which are in good agreement with measured values, but must be refined to account for the occurrence of the ionic rocksalt structure in some compounds. In addition, discrepancies between the theoretical scaling values for volume changes at the semiconductor-to-metal transitions are observed.

  16. Mid-IR luminescence of Cr{sup 2+} : II - VI crystals in chalcogenide glass fibres

    SciTech Connect

    Mironov, Roman A; Zabezhailov, A O; Dianov, Evgenii M; Karaksina, E V; Shapashnikov, R M; Churbanov, M F

    2010-11-13

    Optical fibres have been fabricated for the first time from As{sub 2}S{sub 3} glass containing chromium-doped ZnS and ZnSe crystals, and their optical loss and luminescence spectra have been measured in the mid-IR. In the spectral range 2 - 3 {mu}m, the optical loss in the fibres is 2 - 4 dB m{sup -1}. The fibres have a broad luminescence band in the range 1.8 - 3 {mu}m, with a maximum near 1.9 {mu}m, which is due to Cr{sup 2+} {sup 5}E - {sup 5}T{sub 2} intracentre transitions in the II - VI host. (fibre optics)

  17. Crystal Growth of II-VI Semiconducting Alloys by Directional Solidification

    NASA Technical Reports Server (NTRS)

    Lehoczky, Sandor L.; Szofran, Frank R.; Su, Ching-Hua; Cobb, Sharon D.; Scripa, Rosalia A.; Sha, Yi-Gao

    1999-01-01

    This research study is investigating the effects of a microgravity environment during the crystal growth of selected II-VI semiconducting alloys on their compositional, metallurgical, electrical and optical properties. The on-going work includes both Bridgman-Stockbarger and solvent growth methods, as well as growth in a magnetic field. The materials investigated are II-VI, Hg(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Se, where x is between 0 and 1 inclusive, with particular emphasis on x-values appropriate for infrared detection and imaging in the 5 to 30 micron wavelength region. Wide separation between the liquidus and solidus of the phase diagrams with consequent segregation during solidification and problems associated with the high volatility of one of the components (Hg), make the preparation of homogeneous, high-quality, bulk crystals of the alloys an extremely difficult nearly an impossible task in a gravitational environment. The three-fold objectives of the on-going investigation are as follows: (1) To determine the relative contributions of gravitationally-driven fluid flows to the compositional redistribution observed during the unidirectional crystal growth of selected semiconducting solid solution alloys having large separation between the liquidus and solidus of the constitutional phase diagram; (2) To ascertain the potential role of irregular fluid flows and hydrostatic pressure effects in generation of extended crystal defects and second-phase inclusions in the crystals; and, (3) To obtain a limited amount of "high quality" materials needed for bulk crystal property characterizations and for the fabrication of various device structures needed to establish ultimate material performance limits. The flight portion of the study was to be accomplished by performing growth experiments using the Crystal Growth Furnace (CGF) manifested to fly on various Spacelab missions.

  18. Electrochemical photovoltaic cells/stabilization and optimization of II-VI semiconductors. Final technical report

    SciTech Connect

    Noufi, R.; Tench, D.; Warren, L.

    1980-05-01

    The overall goal of this program is to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors. Emphasis is on developing new electrolyte redox sytems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. The bulk electrode material properties are also being optimized to provide the maximum solar conversion efficiency and greatest inherent electrode stability. Stabilization of n-CdSe against photodissolution has been achieved for the methanol/tetraethylammonium ferro-ferricyanide system. No degradation of the photocurrent or the electrode surface, even in the presence of traces of water, has been observed for runs up to 700 h at 6 mA/cm/sup 2/ and approx. AM1 light intensity. With higher quality single crystal CdSe, stable sort-circuit photocurrents of 15 to 17 mA/cm/sup 2/ and an open circuit voltage of 0.7 V (tungsten-halogen illumination) have been obtained, corresponding to a conversion efficiency of about 5%. Preliminary evaluation of a series of sulfur-containing 1,2-dithiolene metal complexes for stabilization of CdX photoanodes in acetonitrile solution has been completed. For the first time, a conducting polymer film (derived from pyrrole) has been electrochemically deposited on a semiconductor electrode. This could represent a breakthrough in the use of hydrophobic films to protect semiconductor photoanodes from dissolution/degradation. Mixed CdSe-CdTe solid solution electrodes were found to exhibit a minimum in both the flatband potential and the bandgap at approx. 65% CdTe. Both of these shifts would have a detrimental effect on the solar conversion efficiency.

  19. 77 FR 36579 - II-VI, Inc., Infrared Optics-Saxonburg Division, Saxonburg, PA; Leased Workers From Adecco, Carol...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-19

    ... in the Federal Register on February 14, 2012 (77 FR 8281). The workers' firm is engaged in activities... Employment and Training Administration II-VI, Inc., Infrared Optics-Saxonburg Division, Saxonburg, PA; Leased...., Infrared Optics-Saxonburg Division, Saxonburg, PA; Notice of Revised Determination on Reconsideration...

  20. All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof

    DOEpatents

    McCandless, Brian E.

    2001-06-26

    An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

  1. Preparation and properties of solid-state substitution heterojunctions in wide-gap II VI compounds

    NASA Astrophysics Data System (ADS)

    Kosyachenko, L. A.; Makhniy, V. P.

    1991-03-01

    The preparation of ZnTe-ZnSe and CdTe-CdS heterostructures using closed-tube solid-state substitution reactions is reported. The parameters for the diffusion of Te and Cd in ZnSe and for Te and Zn in CdS have been measured. The electrical characteristics of the heterojunctions in question were found to vary significantly with temperature when single crystals were annealed under vapours of the corresponding elements. The width of the graded-gap region was also found to vary with annealing temperature, thus changing the spectral response of the heterostructures. The quantum efficiency of the heterostructures was found to be between 0.6 and 0.8 electrons/quantum. An integrated high-performance device involving a scintillator and a photosensitive p - n heterojunction is proposed.

  2. Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Zhu, S.; Li, C.; Scripa, R.; Lehoczky, S. L.; Kim, Y. M.; Baird, J. K.; Lin, B.; Ban, H.; Benmore, Chris; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. Thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range of 500 C to 900 C. The measured diffusivity as a function of temperature agrees fairly well with published data. However, a relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the melt, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed a similar relaxation behavior to the measured diffusivity. The density and volume expansion coefficients for pure Te and HgTe melts were measured as a function of temperature using a pycnometric method. A density maximum was found for both melts but no relaxation behavior was observed. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed

  3. Optical properties of II-VI semiconductor nanoclusters for use as phosphors

    NASA Astrophysics Data System (ADS)

    Wilcoxon, Jess P.; Newcomer, Paula

    2002-11-01

    The optical properties of both II-VI (direct gap) and type IV (indirect gap) nanosize semiconductors are significantly affected not only by their size, but by the nature of the chemical interface of the cluster with the embedding medium. This affects the light conversion efficiency and can alter the shape and position (i.e. the color) of the photoluminescence (PL). As the goal of our work is to embed nanoclusters into either organic or inorganic matrices for use as near UV, LED-excited phosphor thin films, understanding and controlling this interface is very important for preserving the high Q.E. of nanoclusters known for dilute solution conditions. We describe a room temperature synthesis of semiconductor nanoclusters which employs inexpensive, less toxic ionic precursors (metal salts), and simple coordinating solvents (e.g. tetrahydrofuran). This allows us to add passivating agents, ions, metal or semiconductor coatings to identical, highly dispersed bare clusters, post-synthesis. We can also increase the cluster size by heterogeneous growth on the seed nanoclusters. One of the most interesting observations for our II-VI nanomaterials is that both the absorbance excitonic features and the photoluminescence (PL) energy and intensity depend on the nature of the surface as well as the average size. In CdS, for example, the presence of electron traps (i.e Cd(II) sites) decreases the exciton absorbance peak amplitude but increases the PL nearly two-fold. Hole traps (i.e. S(II)) have the opposite effect. In the coordinating solvents used for the synthesis, the PL yield for d~2 nm, blue emitting CdSe clusters increases dramatically with sample age as the multiple absorbance features sharpen. Liquid chromatographic (LC) separation of the nanoclusters from other chemicals and different sized clusters is used to investigate the intrinsic optical properties of the purified clusters and identify which clusters are contributing most strongly to the PL. Both LC and dynamic

  4. Simulations of Liquid III-V and II-VI Semiconductors: Semiconducting versus Metallic Behavior.

    NASA Astrophysics Data System (ADS)

    Godlevsky, V.

    2000-03-01

    All III-V group semiconductors exhibit metallic behavior when melted. The coordination number of these materials changes from 4 in the bulk to ~ 6 in the liquid phase. With the increase of the coordination number and compositional disorder common to liquid III-V semiconductors, the covalent bonds of these materials are predominantly replaced by metallic bonds. Electron delocalization and high atomic randomization result in a large entropy change during the solidarrowliquid transition. Unlike III-V compounds, a number of II-VI semiconductors (e.g. CdTe, ZnTe and HgS) experience a semiconductorarrowsemiconductor transition upon melting. These compounds retain their fourfold coordination in the liquid phase. In our work, we perform ab initio simulations of liquid GaAs (l-GaAs) and CdTe (l-CdTe), as representatives of III-V and II-VI materials.(V. Godlevsky, J. Derby, and J.R. Chelikowsky, Phys. Rev. Lett. 81), 4959 (1998) As opposed to the more close-packed l-GaAs, l-CdTe has an open fourfold structure. Besides the coordination number, l-CdTe also retains some of its crystalline compositional features (e.g. there are fewer ``wrong'' bond defects than in l-GaAs). In l-CdTe, the density of states has a dip at the Fermi level indicating the semiconducting character of electrical conductivity in this material. The d.c. conductivity in l-CdTe is by two orders of magnitude lower than that in l-GaAs. The small change in the structural order and electron delocalization is in good agreement with the small entropy change observed experimentally during the melting of CdTe. As the temperature increases further, l-CdTe undergoes a fourfold-sixfold transition accompanied by the disappearing of band gap. The d.c. conductivity of sixfold coordinated l-CdTe is by an order of magnitude larger than the d.c. conductivity of fourfold coordinated l-CdTe.(V. Godlevsky, M. Jain, J. Derby, and J.R. Chelikowsky, Phys. Rev. B, 60), 8640 (1999)

  5. Syntheses and applications of Mn-doped II-VI semiconductor nanocrystals.

    PubMed

    Yang, Heesun; Santra, Swadeshmukul; Holloway, Paul H

    2005-09-01

    Luminescent Mn-doped II-VI semiconductor nanocrystals have been intensively investigated over the last ten years. Several semiconductor host materials such as ZnS, CdS, and ZnSe have been used for Mn-doped nanocrystals with different synthetic routes and surface passivation. Beyond studies of their fundamental properties including photoluminescence and size, these luminescent nanocrystals have now been tested for practical applications such as electroluminescent displays and biological labeling agents (biomarkers). Here, we first review ZnS:Mn, CdS:Mn/ZnS core/shell, and ZnSe:Mn nanocrystal systems in terms of their synthetic chemistries and photoluminescent properties. Second, based on ZnS:Mn and CdS:Mn/ZnS core/shell nanocrystals as electroluminescent components, direct current electroluminescent devices having a hybrid organic/inorganic multilayer structure are reviewed. Highly luminescent and photostable CdS:Mn/ZnS nanocrystals can further be used as the luminescent biomarkers and some preliminary results are also discussed here. PMID:16193951

  6. Quantum Dot Channel (QDC) FETs with Wraparound II-VI Gate Insulators: Numerical Simulations

    NASA Astrophysics Data System (ADS)

    Jain, F.; Lingalugari, M.; Kondo, J.; Mirdha, P.; Suarez, E.; Chandy, J.; Heller, E.

    2016-08-01

    This paper presents simulations predicting the feasibility of 9-nm wraparound quantum dot channel (QDC) field-effect transistors (FETs). In particular, II-VI lattice-matched layers which reduce the density of interface states, serving as top (tunnel gate), side, and bottom gate insulators, have been simulated. Quantum simulations show FET operation with voltage swing of ~0.2 V. Incorporation of cladded quantum dots, such as SiO x -Si and GeO x -Ge, under the gate tunnel oxide results in electrical transport in one or more quantum dot layers which form a quantum dot superlattice (QDSL). Long-channel QDC FETs have experimental multistate drain current (I D)-gate voltage (V G) and drain current (I D)-drain voltage (V D) characteristics, which can be attributed to the manifestation of extremely narrow energy minibands formed in the QDSL. An approach for modeling the multistate I D-V G characteristics is reported. The multistate characteristics of QDC FETs permit design of compact two-bit multivalued logic circuits.

  7. Light emitting diodes from MOVPE-grown p- and n-doped II VI compounds

    NASA Astrophysics Data System (ADS)

    Gebhardt, W.; Hahn, B.; Stanzl, H.; Deufel, M.

    1996-02-01

    A critical review is given of the present state, the problems and the prospects of MOVPE-growth of II-VI LEDs. It is shown that MOVPE-growth on (001)GaAs substrates occurs preferentially in a three-dimensional growth mode independent of substrate preparation. ZnS xSe 1 - x grows in good quality over the whole range of composition x. Good quality of Zn xCd 1 - xSe was only obtained for low Cd-concentrations. Improvements can be expected from the use of new precursors. The n-doping of ZnSe and ZnS xSe 1 - x presents no problem when n-butylchloride is used. Carrier concentrations can be as high as n ≥ 10 18. Various nitrogen compounds have been used to achieve p-doping of ZnSe by MOVPE. We show that quite large concentrations of nitrogen can be incorporated by photoassisted MOVPE with phenylhydrazine as precursor. The nitrogen doped samples are usually highly compensated independent from the special doping procedure. Proper annealing can activate at least part of the incorporated nitrogen. The preparation of appropriate diode structures presents no special problems, however their room temperature (RT) luminescence efficiency is still low but may be considerably improved with increasing purity of precursors.

  8. Growth of II-VI Solid Solutions in the Presence of a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Gillies, D. C; Motakef, S.; Dudley, M.; Matyi, R.; Volz, H.

    1999-01-01

    The application of a rotating magnetic field (RMF)in the frequency range 60-400 Hz and field strength of the order of 2-8 mT to crystal growth has received increasing attention in recent years. To take full advantage of the control of fluid flow by the forces applied by the field, the liquid column must be electrically conducting. Also, the application of RMF to the directional solidification of a column of liquid can result in complete mixing in the resultant solid. Thus, the technique of RMF is suited to solvent zones and float zones where the composition of the liquid is more readily controlled. In the work we report on, numerical modeling has been applied to II-VI systems, particularly tellurium based traveling heater techniques (THM). Results for a spectrum of field strengths and acceleration levels will be presented. These show clearly the effects of competing buoyancy forces and electromagnetic stirring. Crystals of cadmium zinc telluride and mercury cadmium telluride have been grown terrestrially from a tellurium solvent zone. The effects of the RMF during these experiments will be demonstrated with micrographs showing etch pits, white beam x-ray synchrotron topographs and triple axis x-ray diffraction.

  9. Chemical trend of exchange coupling in diluted magnetic II-VI semiconductors: Ab initio calculations

    NASA Astrophysics Data System (ADS)

    Chanier, T.; Virot, F.; Hayn, R.

    2009-05-01

    We have calculated the chemical trend of magnetic exchange parameters ( Jdd , Nα , and Nβ ) of Zn-based II-VI semiconductors ZnA ( A=O , S, Se, and Te) doped with Co or Mn. We show that a proper treatment of electron correlations by the local spin-density approximation (LSDA)+U method leads to good agreement between experimental and theoretical values of the nearest-neighbor exchange coupling Jdd between localized 3d spins in contrast to the LSDA method. The exchange couplings between localized spins and doped electrons in the conduction band Nα are in good agreement with experiment as well. But the values for Nβ (coupling to doped holes in the valence band) indicate a crossover from weak coupling (for A=Te and Se) to strong coupling (for A=O ) and a localized hole state in ZnO:Mn. This hole localization explains the apparent discrepancy between photoemission and magneto-optical data for ZnO:Mn.

  10. General synthesis of manganese-doped II-VI and III-V semiconductor nanowires.

    PubMed

    Radovanovic, Pavle V; Barrelet, Carl J; Gradecak, Silvija; Qian, Fang; Lieber, Charles M

    2005-07-01

    A general approach for the synthesis of manganese-doped II-VI and III-V nanowires based on metal nanocluster-catalyzed chemical vapor deposition has been developed. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy studies of Mn-doped CdS, ZnS, and GaN nanowires demonstrate that the nanowires are single-crystal structures and homogeneously doped with controllable concentrations of manganese ions. Photoluminescence measurements of individual Mn-doped CdS and ZnS nanowires show characteristic pseudo-tetrahedral Mn2+ ((4)T1-->(6)A1) transitions that match the corresponding transitions in bulk single-crystal materials well. Photoluminescence studies of Mn-doped GaN nanowires suggest that manganese is incorporated as a neutral (Mn3+) dopant that partially quenches the GaN band-edge emission. The general and controlled synthesis of nanowires doped with magnetic metal ions opens up opportunities for fundamental physical studies and could lead to the development of nanoscale spintronic devices. PMID:16178248

  11. Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor Nanocrystals.

    PubMed

    Zhai, You; Shim, Moonsub

    2015-12-01

    Annealing or growth at high temperatures for an extended period of time is considered detrimental for most synthetic strategies for high-quality Mn-doped II-VI semiconductor nanocrystals. It can lead to the broadening of size distribution and, more importantly, to the loss of dopants. Here, we examine how ripening can be beneficial to doping in a simple "heat-up" approach, where high dopant concentrations can be achieved. We discuss the interplay of the loss of dopants, Ostwald ripening, and the clustering of Mn near the surface during nanocrystal growth. Smaller nanocrystals in a reaction batch, on average, exhibit higher undesirable band-edge photoluminescence (PL) and lower desirable dopant PL. The optimization of dopant loss and the removal of such smaller undesirable nanocrystals through Ostwald ripening along with surface exchange/passivation to remove Mn clustering lead to high Mn PL quantum yields (45 to 55 %) for ZnSxSe1-x, ZnS, CdS, and CdSxSe1-x host nanocrystals. These results provide an improved understanding of the doping process in a simple and potentially scalable synthetic strategy for achieving "pure" and bright dopant emission. PMID:26510444

  12. Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Zhai, You; Shim, Moonsub

    2015-10-01

    Annealing or growth at high temperatures for an extended period of time is considered detrimental for most synthetic strategies for high-quality Mn-doped II-VI semiconductor nanocrystals. It can lead to the broadening of size distribution and, more importantly, to the loss of dopants. Here, we examine how ripening can be beneficial to doping in a simple "heat-up" approach, where high dopant concentrations can be achieved. We discuss the interplay of the loss of dopants, Ostwald ripening, and the clustering of Mn near the surface during nanocrystal growth. Smaller nanocrystals in a reaction batch, on average, exhibit higher undesirable band-edge photoluminescence (PL) and lower desirable dopant PL. The optimization of dopant loss and the removal of such smaller undesirable nanocrystals through Ostwald ripening along with surface exchange/passivation to remove Mn clustering lead to high Mn PL quantum yields (45 to 55 %) for ZnSxSe1-x, ZnS, CdS, and CdSxSe1-x host nanocrystals. These results provide an improved understanding of the doping process in a simple and potentially scalable synthetic strategy for achieving "pure" and bright dopant emission.

  13. Multi-band Bloch equations and gain spectra of highly excited II-VI semiconductor quantum wells

    SciTech Connect

    Girndt, A.; Jahnke, F.; Knorr, A.; Koch, S.W.; Chow, W.W.

    1997-04-21

    Quasi-equilibrium excitation dependent optical probe spectra of II-VI semiconductor quantum wells at room temperature are investigated within the framework of multi-band semiconductor Bloch equations. The calculations include correlation effects beyond the Hartree-Fock level which describe dephasing, interband Coulomb correlations and band-gap renormalization in second Born approximation. In addition to the carrier-Coulomb interaction, the influence of carrier-phonon scattering and inhomogeneous broadening is considered. The explicit calculation of single particle properties like band structure and dipole matrix elements using k {center_dot} p theory makes it possible to investigate various II-VI material combinations. Numerical results are presented for CdZnSe/ZnSe and CdZnSe/MnZnSSe semiconductor quantum-well systems.

  14. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    SciTech Connect

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Wei, Su-Huai; Yan, Yanfa

    2015-10-05

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  15. Temperature Dependence of Density, Viscosity and Electrical Conductivity for Hg-Based II-VI Semiconductor Melts

    NASA Technical Reports Server (NTRS)

    Li, C.; Ban, H.; Lin, B.; Scripa, R. N.; Su, C.-H.; Lehoczky, S. L.

    2004-01-01

    The relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.

  16. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Yan, Yanfa; Wei, Su-Huai

    2015-10-01

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  17. Growth of II-VI thin-films from single-source precursors based on sterically encumbered sitel ligands

    SciTech Connect

    Arnold, J.; Seligson, A.L.; Walker, J.M.; Bourret, E.D.; Bonasia, P.J.

    1992-04-01

    We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source precursors in which the II-VI elements are combined at the molecular level in a single covalent compound. We have prepared and fully characterized a number of new derivatives of zinc, cadmium and mercury incorporating large, sterically demanding tellurolate ligands of general formula: M(sitel){sub 2} where sitel = -TeSi(SiMe{sub 3}){sub 3}. The crystalline compounds are relatively volatile and are easily manipulated under nitrogen. Several of these compounds have been tested for their suitability as precursors in the MOCVD process. Clean pyrolysis reactions and deposition of thin films were achieved. The stoichiometry of the pyrolysis reaction has been determined by analysis of the reaction by-products.

  18. Band Offsets of III-V and II-VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy

    NASA Astrophysics Data System (ADS)

    Perera, A. G. U.; Lao, Y. F.; Wijewarnasuriya, P. S.; Krishna, S. S.

    2016-06-01

    The band offset at the interface of a heterojunction is one of the most important parameters determining the characteristics of devices constructed from heterojunction. Accurate knowledge of band offsets and their temperature dependence will allow one to simulate and predict the device performances. We present a temperature-dependent internal-photoemission spectroscopy (TDIPS) for studying the band offsets. Applications of the TDIPS into III-V and II-VI materials are discussed.

  19. II-VI compounds 1985; Proceedings of the Second International Conference, Aussois, France, March 4-8, 1985

    NASA Astrophysics Data System (ADS)

    Marfaing, Y.; Triboulet, R.; Lunn, B.; Mullin, J. B.

    1985-08-01

    Among the topics considered concerning II-VI compounds are growth of low resistivity high-quality ZnSe, ZnS films by low-pressure metal-organic vapor phase epitaxy growth of Cd(x)Zn(1-x)S, growth of high-purity ZnSe by sublimation traveling-heater method (THM) and the characteristics of the Y and Z deep level emission line, properties of CdTe crystals grown by THM using Cd as the solvent, and liquid-phase epitaxy growth and characterization of 1.3-micron (Hg, Cd)Te layers. Also considered are the self-consistent electronic structure of vacancies in semiconductors, defects in cadmium selenide, luminescence characterization of residual impurities in CdTe grown by molecular beam epitaxy, and photoluminescence of Cd-rich Hg(1-x)Cd(x)Te alloys with x = 0.7-1.0. Additional topics discussed are optically detected magnetic resonance studies of recombination emission in II-VI compounds, X-ray photoemission spectroscopy and magnetotransport studies on the surface of CdHgTe, cadmium mercury telluride infrared detectors, and electron beam-pumped II-VI lasers.

  20. Developing Spectroscopic Ellipsometry to Study II-Vi and Diluted Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Kim, Young-Dong

    We have constructed a rotating analyzer spectroscopic ellipsometer (RAE) to study effects of magnetic and nonmagnetic doping on the E_1 and E _1 + Delta_1 band gap energies in ZnSe-based II-VI semiconductors. To remove the natural surface oxide overlayer which distorts the intrinsic dielectric response of the sample, a chemical etching technique using dilute NH_4OH solution was developed. The successful removal of the oxide overlayer on ZnSe was confirmed via the XPS technique. For diluted magnetic semiconductors (DMS), we found that the E_1 and E _1 + Delta_1 band gap energies increase with x for Zn_{1-x}Fe _{x}Se and Zn_ {1-x}Co_{x}Se, and decrease with x for Zn_{1-x} Mn_{x}Se. An sp -d direct exchange interaction model which explained the Gamma-point band gap energy of Zn _{1-x}Mn_ {x}Se was applied. The calculated band gap energies at the L-point are only consistent with Zn _{1-x}Mn_ {x}Se data. We showed that an sp-d hybridization model, which includes the location of the energy levels of the magnetic impurity d-levels can account for the concentration dependence of E_1 and E _1 + Delta_1 band gap energies of all three materials. For Zn_{x}Cd _{1-x}Se systems, all spectral features of CdSe were identified as E_0, E_0 + Delta_0, E_1, E_1 + Delta_1, E_2, and E _sp{0}{'} threshold energies from band structure calculations using a nonlocal empirical pseudopotential method. Many-body effect has to be included in the calculation of the dielectric function of CdSe to obtain good agreement with the measured spectrum. Concentration dependent spin-orbit splitting band gap Delta _1(x) is well explained by the statistical fluctuation of the alloy composition.

  1. Exciton Kinetics in Strained II-Vi Semiconductor Multiple Quantum Wells.

    NASA Astrophysics Data System (ADS)

    Hefetz, Yaron

    1987-09-01

    Two groups of wide gap II-VI semiconductor superlattices based on ZnSe/Zn(,1-x)Mn(,x)Se and CdTe/ZnTe were investigated using CW and time-resolved photoluminescence, excitation, reflectance, and photomodulated reflectance spectroscopy at various temperatures and under an external magnetic field. All these lattice mismatch strained layer structures were grown by MBE technique and exhibit strong excitonic photoluminescence at low temperatures. By studying the dynamics of the exciton recombination processes, the role of strain, quantum confinement and localization effects were revealed. In the CdTe/ZnTc system where the lattice mismatch is (DELTA)a/a (TURNEQ) 6% the inhomogeneously broadened ((TURN)40 mev) luminescence line is governed by excitonic localization in well width fluctuations. Exchange interactions of the carriers with the Mn('++) ions in the dilute magnetic semiconductor Zn(,1-x)Mn(,x)Se in thin film and the barrier of the MQW structures influence their optical behavior in an exernal magnetic field. "Giant" Zeeman splittings of up to (TURN)10 mev/Tesla were measured in samples with moderate Mn concentration (x = .23). Antiferromagnetic interaction reduces these splittings in samples with higher Mn concentrations. In observing the time evolution of the carrier in Zn(,1-x)Mn(,x)Se MQW we found that the capture time of these carriers into the well is on the order of 1 psec but the last stages of thermalization, exciton formations and localization is (TURN)70 ps. The fast capture of electrons and holes into the quantum wells bypass the energy transfer into the Mn internal transition that is responsible to the efficient "yellow" luminescence in ZnMnSe mixed crystals.

  2. Microwave-assisted synthesis of II-VI semiconductor micro-and nanoparticles towards sensor applications

    NASA Astrophysics Data System (ADS)

    Majithia, Ravish Yogesh

    Engineering particles at the nanoscale demands a high degree of control over process parameters during synthesis. For nanocrystal synthesis, solution-based techniques typically include application of external convective heat. This process often leads to slow heating and allows decomposition of reagents or products over time. Microwave-assisted heating provides faster, localized heating at the molecular level with near instantaneous control over reaction parameters. In this work, microwave-assisted heating has been applied for the synthesis of II-VI semiconductor nanocrystals namely, ZnO nanopods and CdX (X = Se, Te) quantum dots (QDs). Based on factors such as size, surface functionality and charge, optical properties of such nanomaterials can be tuned for application as sensors. ZnO is a direct bandgap semiconductor (3.37 eV) with a large exciton binding energy (60 meV) leading to photoluminescence (PL) at room temperature. A microwave-assisted hydrothermal approach allows the use of sub-5 nm ZnO zero-dimensional nanoparticles as seeds for generation of multi-legged quasi one-dimensional nanopods via heterogeneous nucleation. ZnO nanopods, having individual leg diameters of 13-15 nm and growing along the [0001] direction, can be synthesized in as little as 20 minutes. ZnO nanopods exhibit a broad defect-related PL spanning the visible range with a peak at ~615 nm. Optical sensing based on changes in intensity of the defect PL in response to external environment (e.g., humidity) is demonstrated in this work. Microwave-assisted synthesis was also used for organometallic synthesis of CdX(ZnS) (X = Se, Te) core(shell) QDs. Optical emission of these QDs can be altered based on their size and can be tailored to specific wavelengths. Further, QDs were incorporated in Enhanced Green-Fluorescent Protein -- Ultrabithorax (EGFP-Ubx) fusion protein for the generation of macroscale composite protein fibers via hierarchal self-assembly. Variations in EGFP- Ubx˙QD composite

  3. Exciton-Phonon Interaction Effects in II-Vi Compound Semiconductor Quantum Wells

    NASA Astrophysics Data System (ADS)

    Pelekanos, Nikolaos Themelis

    1992-01-01

    In this thesis, we report on two specific examples of exciton-LO phonon Frohlich interaction effects, namely, hot carrier relaxation and temperature dependent exciton linewidth broadening. These phenomena are considered in the context of quasi-two dimensional excitons in strongly polar II-VI semiconductor quantum wells. Hot-exciton luminescence phenomena are investigated in a single quantum well of ZnTe/MnTe where tunneling through thin MnTe barrier layers suppresses the formation of thermalized luminescence. For near resonant photoexcitation, the secondary emission spectrum is modulated by distinct LO-phonon peaks, which, for sufficiently high order of scattering ( >=4), behave like hot luminescence (HPL) as opposed to resonant Raman scattering. This is confirmed by time-resolved spectroscopy as well as by steady-state characteristics such as linewidth broadening and lack of polarization memory. Several novel observations are made: (1) The LO-phonon intermediated energy relaxation involves Coulomb-correlated pairs, i.e. hot excitons, as opposed to independently-relaxing free electrons and holes. (2) The additional weak disorder originating from QW thickness fluctuations plays a major role in the details of the HPL spectra. The major contribution to the ground state exciton linewidth at room temperature originates from LO phonon -intermediated exciton scattering to higher exciton states. A measure of the effect is given by the parameter Gamma_{LO} which increases with the polarity of the material and is independent of dimensionality provided that the LO phonon energy is greater than the exciton binding energy. Measurements of Gamma_{LO} are performed in two quantum well systems: CdTe/MnTe and (Zn,Cd)Se/ZnSe. In the latter system, a strong reduction of Gamma _{LO} is observed as the quantum well width becomes comparable to the three-dimensional exciton Bohr radius. This is explained in terms of a model where quasi-2D confinement effects increase the exciton binding

  4. Structural and optical properties of II-VI and III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Jingyi

    This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and

  5. Solidification of II-VI Compounds in a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Volz, M. P.; Mazuruk, K.; Motakef, S.; Dudley, M.; Matyi, R.

    1999-01-01

    This project is aimed at using a rotating magnetic field (RMF) to control fluid flow and transport during directional solidification of elemental and compound melts. Microgravity experiments have demonstrated that small amounts of residual acceleration of less than a micro-g can initiate and prolong fluid flow, particularly when there is a static component of the field perpendicular to the liquid solid interface. Thus a true diffusion boundary layer is not formed, and it becomes difficult to verify theories of solidification or to achieve diffusion controlled solidification. The RMF superimposes a stirring effect on an electrically conducting liquid, and with appropriate field strengths and frequencies, controlled transport of material through a liquid column can be obtained. As diffusion conditions are precluded and complete mixing conditions prevail, the technique is appropriate for traveling solvent zone or float zone growth methods in which the overall composition of the liquid can be maintained throughout the growth experiment. Crystals grown by RMF techniques in microgravity in previous, unrelated missions have shown exceptional properties. The objective of the project is two-fold, namely (1) using numerical modeling to simulate the behavior of a solvent zone with applied thermal boundary conditions and demonstrate the effects of decreasing gravity levels, or an increasing applied RMF, or both, and (2) to grow elements and II-VI compounds from traveling solvent zones both with and without applied RMFs, and to determine objectively how well the modeling predicts solidification parameters. Numerical modeling has demonstrated that, in the growth of CdTe from a tellurium solution, a rotating magnetic field can advantageously modify the shape of the liquid solid interface such that the interface is convex as seen from the liquid. Under such circumstances, the defect structure is reduced as any defects which are formed tend to grow out and not propagate. The flow

  6. Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers

    NASA Astrophysics Data System (ADS)

    Sazio, Pier J. A.; Sparks, Justin R.; He, Rongrui; Krishnamurthi, Mahesh; Fitzgibbons, Thomas C.; Chaudhuri, Subhasis; Baril, Neil F.; Peacock, Anna C.; Healy, Noel; Gopalan, Venkatraman; Badding, John V.

    2015-02-01

    ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2 - 5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode corecladding waveguiding.

  7. Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.; Wang, J. C.

    1994-01-01

    Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

  8. Quantum Heterostructures

    NASA Astrophysics Data System (ADS)

    Mitin, Vladimir; Kochelap, Viacheslav; Stroscio, Michael A.

    1999-07-01

    Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.

  9. Acid-free sol-gel fabrication of glass thin films embedded with II-VI colloidal quantum dots

    NASA Astrophysics Data System (ADS)

    Jani, Hemang; Duan, Lingze

    2015-01-01

    II-VI colloidal quantum dots (QDs) are ideal for optical sensors thanks to their high fluorescent brightness and good size uniformity. However, embedding colloidal QDs into a glass matrix with the standard sol-gel process leads to the QDs being damaged by the acid catalyst. Here, we report an acid-free sol-gel technique, which proves to be both simple and effective in fabricating silica glass thin films embedded with commercial II-VI colloidal QDs. Octadecylamine ligands are used as a bifunctional aid to not only stabilize the QDs in solution, but also assist the formation of the SiO2 gel. We demonstrate that high-quality QD-embedded glass thin films can be developed with this technique, and our fluorescent tests indicate that, except for a small blueshift in the emission spectrum, the QDs are very well preserved through the sol-gel process. This method offers a fast and low-cost path towards thin-film QD sensors with good mechanical and thermal stabilities, which are desirable for applications involving highly focused laser beams, such as ultrafast nanophotonics.

  10. Theory of band gap bowing of disordered substitutional II-VI and III-V semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Mourad, D.; Czycholl, G.

    2012-05-01

    For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A x B1- x C can be realized. As the electronic properties like the bulk band gap vary continuously with x, any band gap in between that of the pure AC and BC systems can be obtained by choosing the appropriate concentration x, granted that the respective ratio is miscible and thermodynamically stable. In most cases the band gap does not vary linearly with x, but a pronounced bowing behavior as a function of the concentration is observed. In this paper we show that the electronic properties of such A x B1- x C semiconductors and, in particular, the band gap bowing can well be described and understood starting from empirical tight-binding models for the pure AC and BC systems. The electronic properties of the A x B1- x C system can be described by choosing the tight-binding parameters of the AC or BC system with probabilities x and 1 - x, respectively. We demonstrate this by exact diagonalization of finite but large supercells and by means of calculations within the established coherent potential approximation (CPA) We apply this treatment to the II-VI system Cd x Zn1- x Se, to the III-V system In x Ga1- x As and to the III-nitride system Ga x Al1- x N.

  11. Monte-Carlo simulation studies of the effect of temperature and diameter variation on spin transport in II-VI semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Chishti, Sabiq; Ghosh, Bahniman; Bishnoi, Bhupesh

    2015-02-01

    We have analyzed the spin transport behaviour of four II-VI semiconductor nanowires by simulating spin polarized transport using a semi-classical Monte-Carlo approach. The different scattering mechanisms considered are acoustic phonon scattering, surface roughness scattering, polar optical phonon scattering, and spin flip scattering. The II-VI materials used in our study are CdS, CdSe, ZnO and ZnS. The spin transport behaviour is first studied by varying the temperature (4-500 K) at a fixed diameter of 10 nm and also by varying the diameter (8-12 nm) at a fixed temperature of 300 K. For II-VI compounds, the dominant mechanism is for spin relaxation; D'yakonovPerel and Elliot Yafet have been actively employed in the first order model to simulate the spin transport. The dependence of the spin relaxation length (SRL) on the diameter and temperature has been analyzed.

  12. Effect of Residual Accelerations on the Crystal Growth of II-VI Semiconductors in Low Earth Orbit

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Su, C.-H.; Szofran, F. R.; Scripa, R. N.; Cobb, S. D.; Lehoczky, S. L.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The paper compares and summarizes the effects of residual acceleration during crystal growth on the compositional variation of two II-VI solid solution binary alloys (Hg(0.8)Cd(0.2)Te and Hg(0.84)Zn(0.16)Te). The crystals were grown by directional solidification on the second United States Microgravity Payload (USMP-2) and the first United States Microgravity Laboratory (USML-1) missions, respectively. For both alloys, changes in the direction and magnitude of the quasisteady acceleration vector (approximately 0.4- 1 mu g) caused large changes in the radial compositional distribution that demonstrates the importance of residual accelerations, even in the submicrogravity range, for large density gradients in the melt and slow solidification rates. The observed compositional variations will be correlated to changes in the radial flow velocities ahead of the solidification interface.

  13. Correlation of Schottky constants with interatomic distances of selected I-VII and II-VI compounds

    NASA Astrophysics Data System (ADS)

    Wiedemeier, Heribert

    2013-10-01

    The observed linear (Na-, K-halides) and near-linear (Mg-, Sr-, Zn-, Cd-, and Hg-chalcogenides) dependences of Schottky constants on reciprocal interatomic distances yield the relation logKS=((ss1/T)+is)1/d(A-B)+(si1/T)+ii, where KS is the product of metal and non-metal thermal equilibrium vacancy concentrations, and ss, is, si and ii are the group specific slope and intercept values obtained from an extended analysis of the above log KS versus 1/d(A-B) data. The previously reported linear dependences of log KS on the Born-Haber lattice energies [1] are the basis for combining the earlier results [1] with the Born-Mayer lattice energy equation to yield a new thermodynamic relationship, namely logKS=-(2.303(c(B-M)/d(A-B)-Ie), where c(B-M) is the product of the constants of the Born-Mayer equation and Ie is the metal ionization energy of the above compounds. These results establish a correlation between point defect concentrations and basic thermodynamic, coulombic, and structural solid state properties for selected I-VII and II-VI semiconductor materials.

  14. Materials and device design with III-V and II-VI compound-based diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Katayama-Yoshida, Hiroshi; Sato, Kazunori

    2002-03-01

    Since the discovery of the carrier induced ferromagnetism in (In, Mn)As and (Ga, Mn)As, diluted magnetic semiconductors (DMS) have been of much interest from the industrial viewpoint because of their potentiality as a new functional material (spintronics). In this paper, the magnetism in DMS is investigated based on the first principles calculations, and materials and device design with the DMS is proposed toward the spintronics. The electronic structure is calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation based on the local spin density approximation. We calculate the electronic structure of ferromagnetic and spin-glass DMS, and total energy difference between them is calculated to estimate whether the ferromagnetic state is stable or not. It is shown that V-, Cr- and Mn-doped III-V compounds, V- and Cr-doped II-VI compounds and Fe-, Co- and Ni-doped ZnO are promising candidates for a high-Curie temperature ferromagnet. A chemical trend in the ferromagnetism is well understood based on the double exchange mechanism [1]. Based upon this material design, some prototypes of the spintronics devices, such as a spin-FET, a photo-induced-magnetic memory and a coherent-spin-infection device, are proposed. [1] K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555, 40 (2001) L334, L485 and L651.

  15. Spectroscopy in CdTe/MnTe and ZnTe/MnTe single quantum wells; new binary wide gap II VI heterostructures

    NASA Astrophysics Data System (ADS)

    Pelekanos, N.; Fu, Q.; Nurmikko, A. V.; Durbin, S.; Han, J.; Sungki, O.; Menke, D.; Kobayashi, M.; Gunshor, R. L.

    1990-04-01

    With the incorporation of cubic zincblende MnTe, a range of optical studies have been carried out on single quantum wells of ZnTe/MnTe and CdTe/MnTe. By using thin MnTe barrier layers the structures appear to be nearly pseudomorphic and show evidence for good electron-hole confinement.

  16. Spectroscopy of CdTe/MnTe single quantum wells: A strained-layer II-VI heterostructure with strong electronic confinement

    NASA Astrophysics Data System (ADS)

    Pelekanos, N.; Fu, Q.; Ding, J.; Wałecki, W.; Nurmikko, A. V.; Durbin, S. M.; Han, J.; Kobayashi, M.; Gunshor, R. L.

    1990-05-01

    A range of optical studies has been carried out on a series of single quantum wells of CdTe/MnTe. The structures appear to be nearly pseudomorphic and show evidence for very effective electron-hole confinement. For thin quantum-well layers, efficient low-temperature photoluminescence up to yellow-green photon energies has been obtained. Coupling of excitons to longitudinal-optical phonons has also been measured.

  17. Vibrational properties and phase transitions in II-VI materials: lattice dynamics, ab initio studies and inelastic neutron scattering measurements.

    PubMed

    Basak, Tista; Rao, Mala N; Gupta, M K; Chaplot, S L

    2012-03-21

    Inelastic neutron scattering measurements were carried out to determine the phonon density of states of ZnSe and interpreted with lattice dynamical computations (ab initio as well as a potential model). Calculations are also reported for other II-VI compounds, ZnTe and ZnS. Vibrational (phonon spectra and Grüneisen parameters), and thermal (negative thermal expansion and non-Debye specific heat) properties have been calculated and found to be in good agreement with available experimental data. This model has been further employed to study the pressure-induced solid-solid phase transitions exhibited by these compounds and the results have been compared with experimental data. Total energy calculations for zincblende and SC16 phases of ZnSe were carried out employing the pseudopotential approach under the local density approximation (LDA) as well as the generalized gradient approximation (GGA). The density functional perturbation theory is applied to study the vibrational properties of the zincblende and SC16 phases of ZnSe. An investigation of the pressure dependence of the phonon frequencies shows that the existence of the (experimentally undetected) SC16 phase as a thermodynamically stable high pressure phase is impeded due to dynamical instabilities. A detailed investigation of the polarization of phonons of different energies for the various phases of these compounds indicates that in the case of the zincblende phase the low energy modes are librational, while in the rocksalt phase the low energy modes are bending modes. Further, in ZnTe the low energy bending modes display a larger amplitude of bending than that in ZnSe and ZnS. PMID:22354098

  18. Computational structural investigation of select II-VI compounds and radtkeite (alpha-mercury(3) sulfur(2) chlorine iodine)

    NASA Astrophysics Data System (ADS)

    Sellepack, Steven Matthew

    2000-12-01

    Computational modeling of novel materials is an increasingly powerful tool being used in the development of advanced materials and their device applications. This course of study has been undertaken to discern: (1) the present state of computational simulation of materials; (2) the present ability of computational hardware and software to model new materials; and (3) the ability to apply computational modeling to a relatively poorly studied solid state system, namely mercury(II) chalcogenide halides. Initial interest in this system was fostered by the reported tubular growth of radtkeite (alpha-Hg3S2ClI), which can display a tubular crystal habit tens of micrometers long and micrometers in diameter. To validate that the structures and energies of mercury(II) chalcogenides could be accurately modeled the pressure induced phase transitions in the HgS system were studied using ab initio DF (density functional) calculations. Select MS (M = Ca, Ba, Zn, Cd, Hg, S) compounds were modeled in the cinnabar and zinc-blende structures to discern that they could be accurately modeled. A qualitative description of the MS compounds in the cinnabar structure is provided along with reasoning concerning their relative stability. Three possible radtkeite structures were identified using a brute force methodology of powder x-ray diffraction pattern simulation and then modeled using A initio DF calculations. The cell based upon the gamma-Hg3S 2Cl2 structure was deemed as the best match. This study has validated that computational methods can be used for structural prediction of mercury(II) chalcogenides and chalcogenide halides, however certain methods produced unacceptable results. Materials application statement. This study seeks to discern halogen interactions within II--VI semiconducting materials, namely the mercury(II) chalcogenides. The strategy and methodology of the research will be to invoke computer simulations. The ultimate goal being the correlation of atomic to bulk scale

  19. Multifunctional Oxide Heterostructures

    SciTech Connect

    Tsymbal, E Y; Dagotto, Elbio R; Eom, Professor Chang-Beom; Ramesh, Ramamoorthy

    2012-01-01

    This book is devoted to the rapidly developing field of oxide thin-films and heterostructures. Oxide materials combined with atomic-scale precision in a heterostructure exhibit an abundance of macroscopic physical properties involving the strong coupling between the electronic, spin, and structural degrees of freedom, and the interplay between magnetism, ferroelectricity, and conductivity. Recent advances in thin-film deposition and characterization techniques made possible the experimental realization of such oxide heterostructures, promising novel functionalities and device concepts.

  20. Molecular Model for the Radiative Dipole Strengths and Lifetimes of the Fluorescent Levels of Mn2+and Fe3+ in II-VI And III-V Compounds

    NASA Astrophysics Data System (ADS)

    Parrot, R.; Boulanger, D.

    2005-06-01

    A molecular model is used to give an overall semi-phenomenological interpretation of the radiative transition probabilities (RTP) or radiative lifetimes (RL) of Mn2+ and Fe3+ in II-VI and III-V compounds. It is shown that the RTP's are primarily controlled by: (i) the mixing of the wavefunctions of the cation and of the ligands (ii) the molecular spin-orbit interaction which involves the spin-orbit coupling constants ζd of the d electrons of the cation and ζp of the p electrons of the ligands and (iii) the energies of the intermediate levels which appear in the perturbation model.

  1. Electrochemical photovoltaic cells/stabilization and optimization of II-VI semiconductors. First technical progress report, 15 April 1980-30 June 1980

    SciTech Connect

    Noufi, R.; Tench, D.; Warren, L.

    1980-07-20

    The overall goal of this program is to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors. Emphasis is on developing new electrolyte redox systems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. The bulk electrode material properties are also being optimized to provide the maximum solar conversion efficiency and greatest inherent electrode stability. Factors limiting the short circuit current of the n-CdSe/methanol/ferro-ferricyanide system to 17.5 mA/cm/sup 2/ have been identified. The principal limiting factor is apparently specific adsorption of hexacyanoferrate species on the electrode surface which occurs at higher redox couple concentrations and slows the overall charge transfer process. Ion pairing also occurs, resulting in a low mass transport rate (smaller diffusion coefficients and increased solution viscosity), and probably enhances the degree of specific adsorption. Improvements in the performance of this system will require mitigation of the interactions between the redox species and the electrode surface, e.g., via electrolytes with reduced ion-pairing tendencies or the use of electrode surface films. Photoelectrochemically generated polypyrrole films have been shown to protect CdX photoanodes from dissolution while permitting electron exchange with the electrolyte. Current effort is directed toward improving the film adhesion and optimizing the performance characteristics.

  2. Angular dependent study on spin transport in magnetic semiconductor heterostructures with Dresselhaus spin-orbit interaction

    NASA Astrophysics Data System (ADS)

    Mirzanian, S. M.; Shokri, A. A.; Mikaili Agah, K.; Elahi, S. M.

    2015-09-01

    We investigate theoretically the effects of Dresselhaus spin-orbit coupling (DSOC) on the spin-dependent current and shot noise through II-VI diluted magnetic semiconductor/nonmagnetic semiconductor (DMS/NMS) barrier structures. The calculation of transmission probability is based on an effective mass quantum-mechanical approach in the presence of an external magnetic field applied along the growth direction of the junction and also applied voltage. We also study the dependence of spin-dependent properties on external magnetic field and relative angle between the magnetizations of two DMS layers in CdTe/CdMnTe heterostructures by including the DSOC effect. The results show that the DSOC has great different influence on transport properties of electrons with spin up and spin down in the considered system and this aspect may be utilized in designing new spintronics devices.

  3. Optical phonon modes of III-V nanoparticles and indium phosphide/II-VI core-shell nanoparticles: A Raman and infrared study

    NASA Astrophysics Data System (ADS)

    Manciu, Felicia Speranta

    The prospects for realizing efficient nanoparticle light emitters in the visible/near IR for communications and bio-medical applications have benefited from progress in chemical fabrication of nanoparticles. III-V semiconductor nanopaticles such as GaP and InP are promising materials for the development of "blue" and "green" emitters, respectively, due to their large effective bandgaps. Enhanced emission efficiency has been achieved for core-shell nanoparticles, since inorganic shell materials increase electronic tunability and may decrease surface defects that often occur for nanoparticles capped with organic molecules. Also, the emission wavelength of InP nanoparticle cores can be tuned from green to red by changing the shell material in InP/II-VI core-shell nanoparticles. Investigations of phonon modes in nanocrystals are of both fundamental and applied interest. In the former case the optical phonon modes, such as surface/interface modes, are dependent on the nanoparticle dimensions, and also can provide information about dynamical properties of the nanoparticles and test the validity of various theoretical approaches. In the latter case the vibronic properties of nanoparticle emitters are controlled by confined phonons and modifications of the electron-phonon interaction by the confinement. Thus, the objective of the present thesis is the detailed study of the phonon modes of III-V nanoparticles (GaP and InP) and InP/II-VI core-shell nanoparticles by IR absorption and Raman scattering spectroscopies, and an elucidation of their complex vibrational properties. With the exception of three samples (two GaP and one InP), all samples were synthesized by a novel colloidal chemistry method, which does not requires added surfactant, but rather treatment of the corresponding precursors in octadecene noncoordinative solvent. Sample quality was characterized by ED, TEM and X-ray diffraction. Based on a comparison with a dielectric continuum model, the observed features

  4. Electrochemical photovoltaic cells stabilization and optimization of II-VI semiconductors. Third technical progress report, 1 October 1980 to 31 December 1980

    SciTech Connect

    Noufi, R.; Tench, D.; Warren, L.

    1981-01-20

    A program to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors is described. Emphasis is on developing new electrolyte redox systems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. Work on redox couple stabilization of n-CdX photoanodes has focused on fast metal-based one-electron couples in various nonaqueous solvents which represent an extension of work with the methanol/ferro-ferricyanide system, which, although stabilizing for n-CdSe photoanodes, has been found to be photolytically unstable. Very promising results which were obtained for the FeCl/sub 4//sup 1-/2-/ couple in acetonitrile suggest that related chloro-couples should be considered, including the colorless two-electron tin (II, IV) and antimony (III, V) systems. Conducting polymer films of polyrrole photoelectrochemically deposited onto n-type semiconductors were previously shown to protect these electrode materials from photodecomposition while permitting electron exchange with the electrolyte, but poor adhesion has remained a key problem. Recently, improved adhesion has been attained for roughened semiconductor surfaces. It now appears that polypyrrole films are to some extent permeable to solvent/solute species since the film stability depends on the nature of the redox electrolyte, and semiconductor decomposition products seem to form underneath the film in some cases. One possibility for circumventing this problem is to incorporate larger species, e.g., phthalocyanine dyes, within the film matrix.

  5. Electrochemical photovoltaic cells/stabilization and optimization of II-VI semiconductors. Third technical progress report, 1 October-31 December 1979

    SciTech Connect

    Nouffi, R.; Tench, D.; Warren, L.

    1980-01-20

    The overall goal of this program is to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors. Emphasis is on developing new electrolyte redox systems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. The bulk electrode material properties are also being optimized to provide the maximum solar conversion efficiency and greatest inherent electrode stability. Stabilization of n-CdSe against photodissolution has been achieved for the methanol/tetraethylammonium ferro-ferricyanide system. No degradation of the photocurrent or the electrode surface, even in the presence of traces of water, has been observed for runs up to 700 h at 6 mA/cm/sup 2/ and AM1 light intensity. In recent studies with higher quality single crystal CdSe as well as polycrystalline CdTe-CdSe photoanodes, stable photocurrents of 7.5 mA/cm/sup 2/, corresponding to 4.4% conversion efficiency have been obtained. Through the use of highly purified ferro-ferricyanide electrolytes and/or organic dications, higher conversion efficiencies should be attainable. Preliminary evaluation of a series of sulfur-containing 1,2-dithiolene metal complexes for stabilization of CdX (X=Se, Te, or S) photoanodes in acetonitrile solution has been completed. In certain cases, effective hole capture is indicated and favorable negative shifts in the flatband potentials have been observed. A conducting polymer film (derived from pyrrole) has been electrochemically deposited on a semiconductor electrode. These electrochemically generated polymer films seem to be exceptionally stable and adherent. Studies of the cyanide ion as an electron-transfer mediator in aqueous Fe(CN)/sub 6//sup 3 -///sup 4 -/ electrolytes, and new directions for chemical modification of CdX electrodes are also discussed.

  6. EDITORIAL: Focus on Advanced Semiconductor Heterostructures for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Amann, Markus C.; Capasso, Federico; Larsson, Anders; Pessa, Markus

    2009-12-01

    Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures. Focus on Advanced Semiconductor Heterostructures for Optoelectronics Contents Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert and G Tränkle GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, F Guillot, G Pozzovivo, M Tchernycheva, A Lupu, L Vivien, P Crozat, E Warde, C Bougerol, S Schacham, G Strasser, G Bahir, E Monroy and F H Julien Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction/injection stage Maria I Amanti, Giacomo Scalari, Romain Terazzi, Milan Fischer, Mattias Beck, Jérôme Faist, Alok Rudra, Pascal Gallo and Eli Kapon Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications Young Joon Hong, Jong-Myeong Jeon, Miyoung

  7. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    NASA Astrophysics Data System (ADS)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  8. Study by ESI-FTICRMS and ESI-FTICRMS(n) of zinc and cadmium thiophenolate complexes used as precursors for the synthesis of II-VI nanosemiconductors.

    PubMed

    Arl, Didier; Aubriet, Frédéric; Gaumet, Jean-Jacques

    2009-05-01

    [M(4)(SC(6)H(5))(10)][(CH(3))N](2), [M(10)L(4)(SC(6)H(5))(16)][(CH(3))N](4) and [Cd(17)S(4)(SC(6)H(5))(28)][(CH(3))N](2)(M = Cd or Zn, and L = S or Se) zinc and cadmium thiophenolates have been studied by electrospray ionization (ESI) Fourier transform ion cyclotron resonance (FTICR) mass spectrometry (ESI-FTICRMS) and tandem ESI-FTICRMS (ESI-FTICRMS(n)). ESI-FTICRMS demonstrated its ability to characterize and study such compounds, which may be used as precursors of II-VI nanomaterials. The obtained mass spectrum has been found to be highly relevant of the investigated thiophenolate and the fragmentation behavior of some of the detected ions is indicative of its stability. More specifically, it has been demonstrated that ESI in-source activation or fragmentation experiments conducted in the Fourier transform ion cyclotron resonance mass spectrometry (FTICRMS) cell induced the formation of a very stable entity, which corresponds to the general formula M(4)L(4) (M = Zn or Cd and L = S or Se). The elimination of SC(6)H(5)(-) and/or M(SC(6)H(5))(2) moieties by various activation processes from the studied thiophenolates led systematically to this structure. PMID:19165817

  9. Vertical 2D Heterostructures

    NASA Astrophysics Data System (ADS)

    Lotsch, Bettina V.

    2015-07-01

    Graphene's legacy has become an integral part of today's condensed matter science and has equipped a whole generation of scientists with an armory of concepts and techniques that open up new perspectives for the postgraphene area. In particular, the judicious combination of 2D building blocks into vertical heterostructures has recently been identified as a promising route to rationally engineer complex multilayer systems and artificial solids with intriguing properties. The present review highlights recent developments in the rapidly emerging field of 2D nanoarchitectonics from a materials chemistry perspective, with a focus on the types of heterostructures available, their assembly strategies, and their emerging properties. This overview is intended to bridge the gap between two major—yet largely disjunct—developments in 2D heterostructures, which are firmly rooted in solid-state chemistry or physics. Although the underlying types of heterostructures differ with respect to their dimensions, layer alignment, and interfacial quality, there is common ground, and future synergies between the various assembly strategies are to be expected.

  10. Carrier-impurity spin transfer dynamics in paramagnetic II-VI diluted magnetic semiconductors in the presence of a wave-vector-dependent magnetic field

    NASA Astrophysics Data System (ADS)

    Cygorek, M.; Tamborenea, P. I.; Axt, V. M.

    2016-05-01

    Quantum kinetic equations of motion for carrier and impurity spins in paramagnetic II-VI diluted magnetic semiconductors in a k -dependent effective magnetic field are derived, where the carrier-impurity correlations are taken into account. In the Markov limit, rates for the electron-impurity spin transfer can be derived for electron spins parallel and perpendicular to the impurity spins corresponding to measurable decay rates in Kerr experiments in Faraday and Voigt geometry. Our rigorous microscopic quantum kinetic treatment automatically accounts for the fact that, in an individual spin flip-flop scattering process, a spin flip of an electron is necessarily accompanied by a flop of an impurity spin in the opposite direction and the corresponding change of the impurity Zeeman energy influences the final energy of the electron after the scattering event. This shift in the electron energies after a spin flip-flop scattering process, which usually has been overlooked in the literature, turns out to be especially important in the case of extremely diluted magnetic semiconductors in an external magnetic field. As a specific example for a k -dependent effective magnetic field the effects of a Rashba field on the dynamics of the carrier-impurity correlations in a Hg1 -x -yCdyMnxTe quantum well are described. It is found that, although accounting for the Rashba interaction in the dynamics of the correlations leads to a modified k -space dynamics, the time evolution of the total carrier spin is not significantly influenced. Furthermore, a connection between the present theory and the description of collective carrier-impurity precession modes is presented.

  11. Pressure-induced phonon freezing in the ZnSeS II-VI mixed crystal: phonon-polaritons and ab initio calculations.

    PubMed

    Hajj Hussein, R; Pagès, O; Polian, A; Postnikov, A V; Dicko, H; Firszt, F; Strzałkowski, K; Paszkowicz, W; Broch, L; Ravy, S; Fertey, P

    2016-05-25

    Near-forward Raman scattering combined with ab initio phonon and bond length calculations is used to study the 'phonon-polariton' transverse optical modes (with mixed electrical-mechanical character) of the II-VI ZnSe1-x S x mixed crystal under pressure. The goal of the study is to determine the pressure dependence of the poorly-resolved percolation-type Zn-S Raman doublet of the three oscillator [1  ×  (Zn-Se), 2  ×  (Zn-S)] ZnSe0.68S0.32 mixed crystal, which exhibits a phase transition at approximately the same pressure as its two end compounds (~14 GPa, zincblende  →  rocksalt), as determined by high-pressure x-ray diffraction. We find that the intensity of the lower Zn-S sub-mode of ZnSe0.68S0.32, due to Zn-S bonds vibrating in their own (S-like) environment, decreases under pressure (Raman scattering), whereas its frequency progressively converges onto that of the upper Zn-S sub-mode, due to Zn-S vibrations in the foreign (Se-like) environment (ab initio calculations). Ultimately, only the latter sub-mode survives. A similar 'phonon freezing' was earlier evidenced with the well-resolved percolation-type Be-Se doublet of Zn1-x Be x Se (Pradhan et al 2010 Phys. Rev. B 81 115207), that exhibits a large contrast in the pressure-induced structural transitions of its end compounds. We deduce that the above collapse/convergence process is intrinsic to the percolation doublet of a short bond under pressure, at least in a ZnSe-based mixed crystal, and not due to any pressure-induced structural transition. PMID:27114448

  12. Microbial toxicity of ionic species leached from the II-VI semiconductor materials, cadmium telluride (CdTe) and cadmium selenide (CdSe).

    PubMed

    Ramos-Ruiz, Adriana; Zeng, Chao; Sierra-Alvarez, Reyes; Teixeira, Luiz H; Field, Jim A

    2016-11-01

    This work investigated the microbial toxicity of soluble species that can potentially be leached from the II-VI semiconductor materials, cadmium telluride and cadmium selenide. The soluble ions tested included: cadmium, selenite, selenate, tellurite, and tellurate. Their toxicity towards the acetoclastic and hydrogen-consuming trophic groups in a methanogenic consortium as well as towards a bioluminescent marine bacterium, Aliivibrio fischeri (Microtox(®) test), was assessed. The acetoclastic methanogenic activity was the most affected as evidenced by the low 50% inhibiting concentrations (IC50) values obtained of 8.6 mg L(-1) for both cadmium and tellurite, 10.2 mg L(-1) for tellurate, and 24.1 mg L(-1) for selenite. Both tellurium oxyanions caused a strong inhibition of acetoclastic methanogenesis at low concentrations, each additional increment in concentration provided progressively less inhibition increase. In the case of the hydrogenotrophic methanogenesis, cadmium followed by selenite caused the greatest inhibition with IC50 values of 2.9 and 18.0 mg L(-1), respectively. Tellurite caused a moderate effect as evidenced by a 36.8% inhibition of the methanogenic activity at the highest concentration tested, and a very mild effect of tellurate was observed. Microtox(®) analyses showed a noteworthy inhibition of cadmium, selenite, and tellurite with 50% loss in bioluminescence after 30 min of exposure of 5.5, 171.1, and 458.6 mg L(-1), respectively. These results suggest that the leaching of cadmium, tellurium and selenium ions from semiconductor materials can potentially cause microbial toxicity. PMID:27494313

  13. Preface: Heterostructure terahertz devices

    NASA Astrophysics Data System (ADS)

    Ryzhii, Victor

    2008-08-01

    The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which

  14. Heterostructure terahertz devices.

    PubMed

    Ryzhii, Victor

    2008-08-19

    The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which

  15. Influence of the electron-phonon interaction on the temperature dependence of the phonon mode frequency in the II-VI compound solid solutions

    SciTech Connect

    Woźny, M. Cebulski, J.; Sheregii, E. M.; Marcelli, A.; Piccinini, M.

    2015-01-14

    We present an experimental investigation of the temperature dependence of the TO-phonon mode frequencies for the HgTe-based II-VI semiconductor solid solutions. In the case of the ternary Hg{sub 0.9}Zn{sub 0.1}Te solid solution was shown a discontinuity in the temperature dependence of the HgTe-like T{sub 0}-mode and of the ZnTe-like T{sub 1}-mode, similar to the Hg{sub 0.85}Cd{sub 0.15}Te system [Sheregii et al., Phys. Rev. Lett. 102, 045504 (2009)]. A generalization of the theoretical temperature shift of the phonon mode frequency as analytic equation is derived that includes both the anharmonic contribution and the electron-phonon e-p interaction which in this case is returnable—the electron subsystem effect on the phonon one. Data show that our equation satisfactorily describes the temperature shift of both Hg{sub 0.85}Cd{sub 0.15}Te and Hg{sub 0.90}Zn{sub 0.10}Te containing Dirac point (E{sub g} ≡ Γ{sub 6} – Γ{sub 8} = 0) although one of the two constants describing the anharmonic shift of the HgTe-like mode should be positive what is abnormal too. In the case of the Hg{sub 0.80}Cd{sub 0.20}Te and Hg{sub 0.763}Zn{sub 0.237}Te solid solution, the role of the returnable e-p contribution is negligible but a positive temperature shift for the HgTe-like modes occurs. This result does not allow to explain the positive temperature shift of these modes merely by the contribution of the (e-p) interaction. Indeed, the relativistic contribution to the chemical bonds induces an abnormal temperature shift of the electron states in Hg-based semiconductors—the effect is expected since the Hg d spin-orbit split contribution to chemical bonds may lead to an abnormal temperature shift of the HgTe-like modes.

  16. Strongly-correlated heterostructures

    SciTech Connect

    Okamoto, Satoshi

    2012-01-01

    Electronic phase behavior in correlated-electron systems is a fundamental problem of condensed matter physics. The change in the phase behavior near surfaces and interfaces, i.e., {\\em electronic reconstruction}, is therefore the fundamental issue of the correlated-electron surface or interface science. In addition to basic science, understanding of such a phase behavior is of crucial importance for potential devices exploiting the novel properties of the correlated systems. In this article, we present a general overview of the field, and then discuss the recent theoretical progress mainly focusing on the correlation effects. We illustrate the general concept of {\\em electronic reconstruction} by studying model heterostructures consisting of strongly-correlated systems. Future directions for research are also discussed.

  17. General Considerations of the Electrostatic Boundary Conditions in Oxide Heterostructures

    SciTech Connect

    Higuchi, Takuya

    2011-08-19

    When the size of materials is comparable to the characteristic length scale of their physical properties, novel functionalities can emerge. For semiconductors, this is exemplified by the 'superlattice' concept of Esaki and Tsu, where the width of the repeated stacking of different semiconductors is comparable to the 'size' of the electrons, resulting in novel confined states now routinely used in opto-electronics. For metals, a good example is magnetic/non-magnetic multilayer films that are thinner than the spin-scattering length, from which giant magnetoresistance (GMR) emerged, used in the read heads of hard disk drives. For transition metal oxides, a similar research program is currently underway, broadly motivated by the vast array of physical properties that they host. This long-standing notion has been recently invigorated by the development of atomic-scale growth and probe techniques, which enables the study of complex oxide heterostructures approaching the precision idealized in Fig. 1(a). Taking the subset of oxides derived from the perovskite crystal structure, the close lattice match across many transition metal oxides presents the opportunity, in principle, to develop a 'universal' heteroepitaxial materials system. Hand-in-hand with the continual improvements in materials control, an increasingly relevant challenge is to understand the consequences of the electrostatic boundary conditions which arise in these structures. The essence of this issue can be seen in Fig. 1(b), where the charge sequence of the sublayer 'stacks' for various representative perovskites is shown in the ionic limit, in the (001) direction. To truly 'universally' incorporate different properties using different materials components, be it magnetism, ferroelectricity, superconductivity, etc., it is necessary to access and join different charge sequences, labelled here in analogy to the designations 'group IV, III-V, II-VI' for semiconductors. As we will review, interfaces between

  18. Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(0 0 1) substrate

    NASA Astrophysics Data System (ADS)

    Myronov, Maksym; Morrison, Christopher; Halpin, John; Rhead, Stephen; Foronda, Jamie; Leadley, David

    2015-08-01

    Carrier mobility is one of the most important parameters of any semiconductor material, determining its suitability for applications in a large variety of electronic devices including field effect transistors (FETs). Today the capabilities of modern planar Si FET devices are almost exhausted and researchers are seeking either new device architectures or new materials. Here we report an extremely high room temperature (at 293 K) 2D hole gas (2DHG) drift mobility of 4500 cm2 V-1 s-1 at a carrier density of 1.2 × 1011 cm-2 obtained in a compressively strained Ge quantum well (QW) heterostructure, grown by an industrial type chemical vapor deposition system on a standard Si(0 0 1) substrate. The low-temperature Hall mobility and carrier density of this structure, measured at 333 mK, are 777,000 cm2 V-1 s-1 and 1.9 × 1011 cm-2, respectively. These hole mobilities are the highest not only among the group-IV Si and Ge based semiconductors, but also among p-type III-V and II-VI materials. The obtained room temperature mobility is substantially higher than those reported so far in strained Ge QW heterostructures and reveals a huge potential for further applications of this material in a wide variety of electronic devices.

  19. Assembly of quasicrystalline photonic heterostructures

    SciTech Connect

    Grier, David G.; Roichman, Yael; Man, Weining; Chaikin, Paul Michael; Steinhardt, Paul Joseph

    2013-03-12

    A method and system for assembling a quasicrystalline heterostructure. A plurality of particles is provided with desirable predetermined character. The particles are suspended in a medium, and holographic optical traps are used to position the particles in a way to achieve an arrangement which provides a desired property.

  20. Assembly of quasicrystalline photonic heterostructures

    DOEpatents

    Grier, David G.; Roichman, Yael; Man, Weining; Chaikin, Paul Michael; Steinhardt, Paul Joseph

    2011-07-19

    A method and system for assembling a quasicrystalline heterostructure. A plurality of particles is provided with desirable predetermined character. The particles are suspended in a medium, and holographic optical traps are used to position the particles in a way to achieve an arrangement which provides a desired property.

  1. Carbon Nanotube-Nanocrystal Heterostructures

    SciTech Connect

    Peng, X.; Wong, S.

    2009-04-01

    The importance of generating carbon nanotube-nanoparticle heterostructures is that these composites ought to take advantage of and combine the unique physical and chemical properties of both carbon nanotubes and nanoparticles in one discrete structure. These materials have potential applicability in a range of diverse fields spanning heterogeneous catalysis to optoelectronic device development, of importance to chemists, physicists, materials scientists, and engineers. In this critical review, we present a host of diverse, complementary strategies for the reliable synthesis of carbon nanotube-nanoparticle heterostructures using both covalent as well as non-covalent protocols, incorporating not only single-walled and multi-walled carbon nanotubes but also diverse classes of metallic and semiconducting nanoparticles.

  2. OPENING ADDRESS: Heterostructures in Semiconductors

    NASA Astrophysics Data System (ADS)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  3. Carrier transport and recombination in MOVPE-grown CdTe/ZnTe/GaAs and ZnTe/GaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Mizeikis, V.; Jarašiunas, K.; Lovergine, N.; Prete, P.

    2000-06-01

    The carrier dynamics in metalorganic vapour-phase epitaxy-grown CdTe/ZnTe/GaAs and ZnTe/GaAs heterostructures is investigated by transient laser-induced grating (TLIG) spectroscopy. TLIG measurements were performed at room temperature for different grating periods and pump excitation intensities. By best-fitting the slower part of the TLIG decay curves with a one-dimensional model we found recombination lifetime τR=1130 ps, and carrier diffusion coefficient D=29.5 cm 2/s for CdTe/ZnTe/GaAs samples and τR=1670 ps, D=32.4 cm 2/s for ZnTe/GaAs. Whilst the above lifetime values are typical for highly excited II-VI semiconductors, the diffusion coefficients are much higher than that expected for bipolar diffusion. Our D values can be explained by unipolar (n≪p) diffusion as a result of the efficient trapping of electrons in CdTe and their fast escape into GaAs for ZnTe.

  4. Synthesis of Colloidal Nanocrystal Heterostructures for High-Efficiency Light Emission

    NASA Astrophysics Data System (ADS)

    Lu, Yifei

    Group II-VI semiconductor nanocrystals, particularly those based on ZnCdS(Se), can be synthesized using well established chemical colloidal processes, and have been a subject of extensive research over the past decade. Their optical properties can be easily tuned through size and composition variations, making them very attractive for many optoelectronic applications including light-emitting diodes (LEDs) and solar cells. Incorporation of diverse internal heterostructures provides an additional means for tuning the optical and electronic properties of conventional ZnCdS(Se) nanocrystals. Extensive bandgap and strain engineering may be applied to the resultant nanocrystal heterostructures to achieve desirable properties and enhanced performance. Despite the high scientific and practical interests of this unique class of nanomaterials, limited efforts have been made to explore their synthesis and potential device applications. This thesis focuses on the synthesis, engineering, characterization, and device demonstration of two types of CdSe-based nanocrystal heterostructures: core/multishell quantum dots (QDs) and QD quantum wells (QDQWs). Their optical properties have been tuned by bandgap and strain engineering to achieve efficient photoluminescence (PL) and electroluminescence (EL).Firstly, yellow light-emitting CdSe QDs with a strain-compensated ZnS/ZnCdS bilayer shell were synthesized using the successive ion layer adsorption and reaction technique and the effects of the shell on the luminescent properties were investigated. The core/shell/shell QDs enjoyed the benefits of excellent exciton confinement by the ZnS intermediate shell and strain compensation by the ZnCdS outer shell, and exhibited 40% stronger PL and a smaller peak redshift upon shell growth compared to conventional CdSe/ZnCdS/ZnS core/shell/shell QDs with an intermediate lattice adaptor. CdSe/ZnS/ZnCdS QD-LEDs had a luminance of 558 cd/m2 at 20 mA/cm 2, 28% higher than that of CdSe/ZnCdS/ZnS QD

  5. Multilayer heterostructures and their manufacture

    SciTech Connect

    Hammond, Scott R; Reese, Matthew; Rupert, Benjamin; Miedaner, Alexander; Curtis, Clavin; Olson, Dana; Ginley, David S

    2015-11-04

    A method of synthesizing multilayer heterostructures including an inorganic oxide layer residing on a solid substrate is described. Exemplary embodiments include producing an inorganic oxide layer on a solid substrate by a liquid coating process under relatively mild conditions. The relatively mild conditions include temperatures below 225.degree. C. and pressures above 9.4 mb. In an exemplary embodiment, a solution of diethyl aluminum ethoxide in anhydrous diglyme is applied to a flexible solid substrate by slot-die coating at ambient atmospheric pressure, and the diglyme removed by evaporation. An AlO.sub.x layer is formed by subjecting material remaining on the solid substrate to a relatively mild oven temperature of approximately 150.degree. C. The resulting AlO.sub.x layer exhibits relatively high light transmittance and relatively low vapor transmission rates for water. An exemplary embodiment of a flexible solid substrate is polyethylene napthalate (PEN). The PEN is not substantially adversely affected by exposure to 150.degree. C

  6. Spin Transport in Semiconductor heterostructures

    SciTech Connect

    Domnita Catalina Marinescu

    2011-02-22

    The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

  7. Infrared photodetectors in heterostructure nanowires.

    PubMed

    Pettersson, H; Trägårdh, J; Persson, A I; Landin, L; Hessman, D; Samuelson, L

    2006-02-01

    We report on spectrally resolved photocurrent measurements on single self-assembled nanowire heterostructures. The wires, typically 3 microm long with an average diameter of 85 nm, consist of InAs with a 1 microm central part of InAsP. Two different sets of wires were prepared with phosphorus contents of 15+/-3% and 35+/-3%, respectively, as determined by energy-dispersive spectroscopy measurements made in transmission electron microscopy. Ohmic contacts are fabricated to the InAs ends of the wire using e-beam lithography. The conduction band offset between the InAs and InAsP regions virtually removes the dark current through the wires at low temperature. In the optical experiments, interband excitation in the phosphorus-rich part of the wires results in a photocurrent with threshold energies of about 0.65 and 0.82 eV, respectively, in qualitative agreement with the expected band gap of the two compositions. Furthermore, a strong polarization dependence is observed with an order of magnitude larger photocurrent for light polarized parallel to the wire than for light polarized perpendicular to the wire. We believe that these wires form promising candidates as nanoscale infrared polarization-sensitive photodetectors. PMID:16464040

  8. Wafer bonded epitaxial templates for silicon heterostructures

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A., Jr. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcubera I (Inventor)

    2008-01-01

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  9. Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

    NASA Astrophysics Data System (ADS)

    Fafard, S.; York, M. C. A.; Proulx, F.; Valdivia, C. E.; Wilkins, M. M.; Arès, R.; Aimez, V.; Hinzer, K.; Masson, D. P.

    2016-02-01

    Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ˜1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting voltage outputs between >5 V and >14 V.

  10. Processing, mechanisms, and applications in p-zinc sulphur selenide:nitrogen/p(+) gallium arsenide heterostructures

    NASA Astrophysics Data System (ADS)

    Hong, Hyesook

    This research addresses the electrical and optical properties of II-VI compound semiconductors, namely ZnSe and the family, for applications to blue-green lasers or photodetectors. To realize such devices, forming the p-n junction is crucial. The difficulty in obtaining in-situ p-type Zn(S)Se using molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD) prompted N-ion implantation on undoped material to obtain the required doping into ZnSSe epilayers with various ion energy and doses to study p-type properties of ZnSSe. To activate the implanted species as acceptors for ZnSSe and remove damage from ion bombardment, an optimum post annealing condition was sought through photoluminescence, current-voltage (I-V), and capacitance-voltage (C-V) measurements. This study showed doping concentration between 10sp{17}{-}10sp{13} cmsp{-3} from C-V measurements due to a Gaussian depth profile of ion bombardment. MBE grown p-type ZnSSe on psp +GaAs (100) substrates with RF plasma in-situ doping was studied for possible application for heterostructure devices. To study the electrical properties of this material, proper Ohmic system on the psp+GaAs side were sought due to the low thermal budget. Schottky contacts were deposited on the ZnSSe surface with various metals to extract Schottky parameters. As a device application, nitrogen implanted p-i-n devices were fabricated using the optimum post annealing condition. Nitrogen ions were implanted into the MBE grown undoped ZnSe/ZnSe:Cl/nsp+GaAs (100) substractes. A quasi-uniform p-layer doping profile was obtained, using nitrogen ions at multiple energies and ion doses. These devices exhibited a responsivity of 0.025 A/W at a wavelength of 460 nm through the top 200 A thick metal contracts. Metal semiconductor photodetectors were fabricated with undoped 0.5 mum and 2.0 mum thick ZnSe epilayers on semi-insulating GaAs substrates. A dielectric multilayer hard mask technique was employed to aid in metal

  11. ARPES studies of van der Waals heterostructure

    NASA Astrophysics Data System (ADS)

    Wang, Eryin; Lu, Xiaobo; Chen, Guorui; Fedorov, Alexei V.; Zhang, Yuanbo; Zhang, Guangyu; Zhou, Shuyun

    Van der Waals heterostructures are a novel class of ``materials by design'' which are formed by stacking different two-dimensional crystals together via van der Waals interaction. The periodic potential by the Moir é superlattice can be used as a control knob for tuning the electronic properties of two dimensional materials and can induce various novel quantum phenomena. Here we report direct electronic structure studies the of a model van der Waals heterostructure using angle-resolved photoemission spectroscopy (ARPES). This work is supported by the National Natural Science Foundation of China and Ministry of Education of China.

  12. Complementary junction heterostructure field-effect transistor

    DOEpatents

    Baca, Albert G.; Drummond, Timothy J.; Robertson, Perry J.; Zipperian, Thomas E.

    1995-01-01

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

  13. Complementary junction heterostructure field-effect transistor

    DOEpatents

    Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

    1995-12-26

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

  14. Ultrafast Strain Engineering in Complex Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Caviglia, A. D.; Scherwitzl, R.; Popovich, P.; Hu, W.; Bromberger, H.; Singla, R.; Mitrano, M.; Hoffmann, M. C.; Kaiser, S.; Zubko, P.; Gariglio, S.; Triscone, J.-M.; Först, M.; Cavalleri, A.

    2012-03-01

    We report on ultrafast optical experiments in which femtosecond midinfrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO3 epitaxial thin films is observed as a structural distortion propagates across the interface. Vibrational excitation, extended here to a wide class of heterostructures and interfaces, may be conducive to new strategies for electronic phase control at THz repetition rates.

  15. Ultrafast strain engineering in complex oxide heterostructures.

    PubMed

    Caviglia, A D; Scherwitzl, R; Popovich, P; Hu, W; Bromberger, H; Singla, R; Mitrano, M; Hoffmann, M C; Kaiser, S; Zubko, P; Gariglio, S; Triscone, J-M; Först, M; Cavalleri, A

    2012-03-30

    We report on ultrafast optical experiments in which femtosecond midinfrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO(3) epitaxial thin films is observed as a structural distortion propagates across the interface. Vibrational excitation, extended here to a wide class of heterostructures and interfaces, may be conducive to new strategies for electronic phase control at THz repetition rates. PMID:22540718

  16. Properties of ferroelectric/ferromagnetic thin film heterostructures

    SciTech Connect

    Chen, Daming; Harward, Ian; Linderman, Katie; Economou, Evangelos; Celinski, Zbigniew; Nie, Yan

    2014-05-07

    Ferroelectric/ferromagnetic thin film heterostructures, SrBi{sub 2}Ta{sub 2}O{sub 9}/BaFe{sub 12}O{sub 19} (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

  17. Heterostructures based on inorganic and organic van der Waals systems

    SciTech Connect

    Lee, Gwan-Hyoung; Lee, Chul-Ho; Zande, Arend M. van der; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Hone, James; Nuckolls, Colin; Heinz, Tony F.; Kim, Philip

    2014-09-01

    The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS{sub 2} heterostructures for memory devices; graphene/MoS{sub 2}/WSe{sub 2}/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.

  18. Properties of ferroelectric/ferromagnetic thin film heterostructures

    NASA Astrophysics Data System (ADS)

    Chen, Daming; Harward, Ian; Linderman, Katie; Economou, Evangelos; Nie, Yan; Celinski, Zbigniew

    2014-05-01

    Ferroelectric/ferromagnetic thin film heterostructures, SrBi2Ta2O9/BaFe12O19 (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

  19. A review of nano-optics in metamaterial hybrid heterostructures

    SciTech Connect

    Singh, Mahi R.

    2014-03-31

    We present a review for the nonlinear nano-optics in quantum dots doped in a metamaterial heterostructure. The heterostructure is formed by depositing a metamaterial on a dielectric substrate and ensemble of noninteracting quantum dots are doped near the heterostructure interface. It is shown that there is enhancement of the second harmonic generation due to the surface plasmon polaritons field present at the interface.

  20. A review of nano-optics in metamaterial hybrid heterostructures

    NASA Astrophysics Data System (ADS)

    Singh, Mahi R.

    2014-03-01

    We present a review for the nonlinear nano-optics in quantum dots doped in a metamaterial heterostructure. The heterostructure is formed by depositing a metamaterial on a dielectric substrate and ensemble of noninteracting quantum dots are doped near the heterostructure interface. It is shown that there is enhancement of the second harmonic generation due to the surface plasmon polaritons field present at the interface.

  1. Low energy consumption spintronics using multiferroic heterostructures

    NASA Astrophysics Data System (ADS)

    Trassin, Morgan

    2016-01-01

    We review the recent progress in the field of multiferroic magnetoelectric heterostructures. The lack of single phase multiferroic candidates exhibiting simultaneously strong and coupled magnetic and ferroelectric orders led to an increased effort into the development of artificial multiferroic heterostructures in which these orders are combined by assembling different materials. The magnetoelectric coupling emerging from the created interface between the ferroelectric and ferromagnetic layers can result in electrically tunable magnetic transition temperature, magnetic anisotropy or magnetization reversal. The full potential of low energy consumption magnetic based devices for spintronics lies in our understanding of the magnetoelectric coupling at the scale of the ferroic domains. Although the thin film synthesis progresses resulted into the complete control of ferroic domain ordering using epitaxial strain, the local observation of magnetoelectric coupling remains challenging. The ability to imprint ferroelectric domains into ferromagnets and to manipulate those solely using electric fields suggests new technological advances for spintronics such as magnetoelectric memories or memristors.

  2. Superconducting cuprate heterostructures for hot electron bolometers

    NASA Astrophysics Data System (ADS)

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La2-xSrxCuO4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV ˜γI3, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ /dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area ge -ph≈1 W/K cm2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  3. Designing heterostructures -- a route towards new superconductors

    NASA Astrophysics Data System (ADS)

    Kopp, Thilo

    2013-03-01

    By now it has become technologically feasible to grow controllably transition metal oxides layer by layer. In effect, the achieved progress allows to design heterostructures with optimized electronic properties. The talk will specifically address scenarios for interface superconductivity and the possibility to raise the transition temperature of bulk superconductors by layer design. Heterostructures offer a complexity beyond that of bulk materials. The nature of the superconducting states formed in layered materials and at interfaces is a fascinating topic of recent research which will be in the focus of this presentation. This work was supported by the DFG (TRR 80). I thankfully acknowledge the collaboration with Natalia Pavlenko, Peter Hirschfeld, Cyril Stephanos, Florian Loder, Arno Kampf, and Jochen Mannhart.

  4. Superconducting cuprate heterostructures for hot electron bolometers

    SciTech Connect

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-25

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La{sub 2−x}Sr{sub x}CuO{sub 4} layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV∼γI{sup 3}, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ/dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area g{sub e−ph}≈1 W/K cm{sup 2} at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  5. Mechanical strain and degradation of laser heterostructures

    NASA Astrophysics Data System (ADS)

    Ptashchenko, Alexander A.; Ptashchenko, Fedor A.; Maslejeva, Natalia V.; Sadova, Galina V.

    2001-02-01

    The effect of mechanical strain on degradation processes in GaAs-AlGaAs laser heterostructures (LHS) with stripe geometry and in light emitting diodes (LED) was experimentally studied. The strain was produced either by axial pressure or by indentation with a Wickers pyramid. We show that degradation affects the degree of polarization and the far-field distribution of laser emission. The effect of strain on the degradation intensity is estimated.

  6. Graphene diamond-like carbon films heterostructure

    NASA Astrophysics Data System (ADS)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-03-01

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ˜25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  7. Picosecond photoresponse in van der Waals heterostructures.

    PubMed

    Massicotte, M; Schmidt, P; Vialla, F; Schädler, K G; Reserbat-Plantey, A; Watanabe, K; Taniguchi, T; Tielrooij, K J; Koppens, F H L

    2016-01-01

    Two-dimensional crystals such as graphene and transition-metal dichalcogenides demonstrate a range of unique and complementary optoelectronic properties. Assembling different two-dimensional materials in vertical heterostructures enables the combination of these properties in one device, thus creating multifunctional optoelectronic systems with superior performance. Here, we demonstrate that graphene/WSe2/graphene heterostructures ally the high photodetection efficiency of transition-metal dichalcogenides with a picosecond photoresponse comparable to that of graphene, thereby optimizing both speed and efficiency in a single photodetector. We follow the extraction of photoexcited carriers in these devices using time-resolved photocurrent measurements and demonstrate a photoresponse time as short as 5.5 ps, which we tune by applying a bias and by varying the transition-metal dichalcogenide layer thickness. Our study provides direct insight into the physical processes governing the detection speed and quantum efficiency of these van der Waals heterostuctures, such as out-of-plane carrier drift and recombination. The observation and understanding of ultrafast and efficient photodetection demonstrate the potential of hybrid transition-metal dichalcogenide-based heterostructures as a platform for future optoelectronic devices. PMID:26436565

  8. Correlated Heterostructures for Efficient Solar Cells

    NASA Astrophysics Data System (ADS)

    Assmann, Elias; Aichhorn, Markus; Sangiovanni, Giorgio; Okamoto, Satoshi; Blaha, Peter; Bhandary, Sumanta; Held, Karsten

    Polar |non-polar oxide heterostructures such as LaAlO3 | SrTiO3 have become well-known for the many intriguing phenomena occurring at the interface, especially the internal potential gradient and the resulting 2d electron gas. We propose to make use of these unique systems as absorbing materials for high-efficiency solar cells. In particular, LaVO3 | SrTiO3 (i) has a direct band gap ~1.1 eV, nearly optimal for a solar cell; (ii) the internal potential gradient serves to efficiently separate the photo-generated electron-hole pairs and reduce recombination losses; (iii) the conducting interface offers a natural contact for charge-carrier extraction. Furthermore, (iv) oxide heterostructures afford the flexibility to combine layers with different gaps, e.g. LaVO3 with LaFeO3, in order to achieve even higher efficiencies with band-gap graded solar cells. We use density-functional theory and dynamical mean-field theory to study this strongly correlated heterostructure.

  9. Picosecond photoresponse in van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Massicotte, M.; Schmidt, P.; Vialla, F.; Schädler, K. G.; Reserbat-Plantey, A.; Watanabe, K.; Taniguchi, T.; Tielrooij, K. J.; Koppens, F. H. L.

    2016-01-01

    Two-dimensional crystals such as graphene and transition-metal dichalcogenides demonstrate a range of unique and complementary optoelectronic properties. Assembling different two-dimensional materials in vertical heterostructures enables the combination of these properties in one device, thus creating multifunctional optoelectronic systems with superior performance. Here, we demonstrate that graphene/WSe2/graphene heterostructures ally the high photodetection efficiency of transition-metal dichalcogenides with a picosecond photoresponse comparable to that of graphene, thereby optimizing both speed and efficiency in a single photodetector. We follow the extraction of photoexcited carriers in these devices using time-resolved photocurrent measurements and demonstrate a photoresponse time as short as 5.5 ps, which we tune by applying a bias and by varying the transition-metal dichalcogenide layer thickness. Our study provides direct insight into the physical processes governing the detection speed and quantum efficiency of these van der Waals heterostuctures, such as out-of-plane carrier drift and recombination. The observation and understanding of ultrafast and efficient photodetection demonstrate the potential of hybrid transition-metal dichalcogenide-based heterostructures as a platform for future optoelectronic devices.

  10. Voltage control of magnetism in multiferroic heterostructures

    PubMed Central

    Liu, Ming; Sun, Nian X.

    2014-01-01

    Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories. PMID:24421373

  11. Graphene diamond-like carbon films heterostructure

    SciTech Connect

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-03-09

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  12. Magnetoelectric Heterostructures for Spintronics and Magnetic Sensing

    NASA Astrophysics Data System (ADS)

    Nan, Tianxiang

    Magnetoelectric heterostructures with coupled magnetization and electric polarization across their interfaces enable significantly improvement of performance of many devices such as magnetic sensors, microwave magnetic devices, and spintronics. I will first show that by utilizing a unique ferroelastic polarization switching pathway, one can achieve non-volatile electric-field-switching of magnetism in multiferroic heterostructures with different ferroelectric single crystals through a strain-mediated magnetoelectric coupling. In the same system, with atomically-thin ferromagnets, the interfacial charge-mediated should also be taken into account. The charge- and strain-mediated coupling mechanisms are demonstrated and precisely quantified by the electric-field-tuning of ferromagnetic resonance. With the same technique, magnetic relaxation including intrinsic and extrinsic damping has also been shown to be strongly correlated to the strain, which is attributed to the electric-field-modification of spin-orbit coupling. Moreover, I will also show the tuning of spin-orbit torques from the spin-Hall effect with applied voltage probed with spin-torque ferromagnetic resonance and show the possible application on voltage tunable spin-Hall nano-oscillators. In the second part of my thesis, I will show an ultra-miniaturized magnetoelectric nano-electromechanical system (NEMS) resonator based on an AlN/FeGaB magnetoelectric heterostructure for detecting wide band magnetic fields. With the high Quality factor and the ultra-high resonance frequency, a low DC magnetic field detection limit of 300 pT has been demonstrated.

  13. van der Waals Heterostructures Grown by MBE

    NASA Astrophysics Data System (ADS)

    Hinkle, Christopher

    In this work, we demonstrate the high-quality MBE heterostructure growth of various layered 2D materials by van der Waals epitaxy (VDWE). The coupling of different types of van der Waals materials including transition metal dichalcogenide thin films (e.g., WSe2, WTe2, HfSe2) , insulating hexagonal boron nitride (h-BN), and topological insulators (e.g., Bi2Se3) allows for the fabrication of novel electronic devices that take advantage of unique quantum confinement and spin-based characteristics. The relaxed lattice-matching criteria of van der Waals epitaxy has allowed for high-quality heterostructure growth with atomically abrupt interfaces, allowing us to couple these materials based primarily on their band alignment and electronic properties. We will discuss the impact of sample preparation, surface reactivity, and lattice mismatch of various substrates (sapphire, graphene, TMDs, Bi2Se3) on the growth mode and quality of the films and will discuss our studies of substrate temperature and flux rates on the resultant growth and grain size. Structural and chemical characterization was conducted via reflection high energy electron diffraction (RHEED, X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning tunneling microscopy/spectroscopy (STM/S), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Experimentally determined band alignments have been determined and compared with first-principles calculations allowing the design of novel low-power logic and magnetic memory devices. Initial results from the electrical characterization of these grown thin films and some simple devices will also be presented. These VDWE grown layered 2D materials show significant potential for fabricating novel heterostructures with tunable band alignments and magnetic properties for a variety of nanoelectronic and optoelectronic applications.

  14. Imaging and Spectroscopy of Graphene Heterostructures

    NASA Astrophysics Data System (ADS)

    Leroy, Brian

    2014-03-01

    Graphene on hexagonal boron nitride (hBN) is an example of a van der Waals heterostructure where the electronic properties of the composite material can be different from either individual material. The lattice mismatch and twist angle between graphene and hBN produces a moiré pattern in STM topographic images. For all angles, we have observed that the surface roughness of the graphene is reduced by at least an order of magnitude as compared to graphene on silicon oxide devices. Near the charge neutrality point, graphene breaks up into a series of electron and hole puddles due to potential fluctuations. Using scanning tunneling spectroscopy, we have shown that at large twist angles the potential fluctuations are reduced by an order of magnitude by the presence of the hBN. Using heterostructures with graphite gates underneath the hBN, we have observed even further reduction in the potential fluctuations. At small twist angles, the hBN substrate produces a weak periodic potential which can have a wavelength of up to 14 nm. This periodic potential creates a new set of superlattice Dirac points at the wavevector of the potential. As the relative rotation angle between the graphene and hBN changes, the energy of this superlattice Dirac point changes. These new superlattice Dirac points have a reduced and anisotropic Fermi velocity. Using gate voltage dependent scanning tunneling spectroscopy, we have observed the effect of the new Dirac points on the local density of states in graphene. Our latest results on other graphene heterostructures will also be discussed.

  15. Room-temperature semiconductor heterostructure refrigeration

    NASA Astrophysics Data System (ADS)

    Chao, K. A.; Larsson, Magnus; Mal'shukov, A. G.

    2005-07-01

    With the proper design of semiconductor tunneling barrier structures, we can inject low-energy electrons via resonant tunneling, and take out high-energy electrons via a thermionic process. This is the operation principle of our semiconductor heterostructure refrigerator (SHR) without the need of applying a temperature gradient across the device. Even for the bad thermoelectric material AlGaAs, our calculation shows that at room temperature, the SHR can easily lower the temperature by 5-7K. Such devices can be fabricated with the present semiconductor technology. Besides its use as a kitchen refrigerator, the SHR can efficiently cool microelectronic devices.

  16. Photoluminescence method of testing double heterostructure wafers

    SciTech Connect

    Besomi, P.R.; Wilt, D.P.

    1984-04-10

    Under photoluminescence (PL) excitation, the lateral spreading of photo-excited carriers can suppress the photoluminescence signal from double heterostructure (DH) wafers containing a p-n junction. In any DH with a p-n junction in the active layer, PL is suppressed if the power of the excitation source does not exceed a threshold value. This effect can be advantageously used for a nondestructive optical determination of the top cladding layer sheet conductance as well as p-n junction misplacement, important parameters for injection lasers and LEDs.

  17. Pseudomorphic GeSn/Ge (001) heterostructures

    SciTech Connect

    Tonkikh, A. A.; Talalaev, V. G.; Werner, P.

    2013-11-15

    The synthesis of pseudomorphic GeSn heterostructures on a Ge (001) substrate by molecular-beam epitaxy is described. Investigations by transmission electron microscopy show that the GeSn layers are defect free and possess cubic diamondlike structure. Photoluminescence spectroscopy reveals interband radiative recombination in the GeSn quantum wells, which is identified as indirect transitions between the subbands of heavy electrons and heavy holes. On the basis of experimental data and modeling of the band structure of pseudomorphic GeSn compounds, the lower boundary of the bowing parameter for the indirect band gap is estimated as b{sub L} {>=} 1.47 eV.

  18. Heterostructures as a quantum optical klistron

    SciTech Connect

    Malov, Yu.A.

    1995-12-31

    THE beam of {open_quotes}hot{close_quotes} ballistic electrons which were first obtained experimentally in (1) is considered when passing through the heterostructures consisting of two potential barriers in barriers in the presence of FEL tuning in infra-red region. In the presence of the first barrier the electron beam in the FEL electromagnetic field can either absorb or emit the field quanta. The initial electron beam may split into states n=1 (absorption of one quantum), n=0 (the beam energy unchanged), and n=-1 (emission of one quantum). The interference of the states with n=0, n=1 and n=0, n=1 results in the initiation of two traveling modulation waves at electromagnetic frequency w. Beats between these waves in the region of the of their overlapping lead to a periodic dependence of the modulation from w. It has been found that the spontaneous coherent radiation (SCR) intensity oscillates with the period depending on FEL frequency w. It is possible to increase or to decrease the spectral intensity of SCR varying w. The suggested idea of modulation on the first barrier of heterostructures and the radiation of modulated electron beam on the second barrier is a scheme of an quantum optical klistron in infra-red region.

  19. Magnetocaloric Properties of Thin Film Heterostructures

    NASA Astrophysics Data System (ADS)

    Kirby, H.; Bauer, C.; Kirby, B. J.; Lau, J.; Miller, C. W.

    2011-03-01

    In an effort to understand the impact of nanostructuring on the magnetocaloric (MC) effect, we have studied gadolinium in MgO/W(50 Å)/[Gd(400 Å)/W(50 Å)]8 heterostructures [Miller et al., J. Appl. Phys. 107, 09A903 (2010)]. The entropy change peaks at a temperature of 284 K with a value of 3.4 J/kg K for a 0--30 kOe field change. Polarized neutron reflectometry was used to determine the depth profile of the magnetic moment per Gd atom, m Gd in a Gd/W multilayer. Our results suggest that creating materials with Gd-ferromagnet interfaces may increase the m Gd , leading to enhanced MC properties. Therefore SiOx/Fe(50 Å)/Gd(300 Å)/Fe(50 Å) heterostructures have been investigated. This work was supported by AFOSR-YIP. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, O?ce of Science, O?ce of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  20. Photoresponse in Graphene Boron Nitride Vertical Heterostructures

    NASA Astrophysics Data System (ADS)

    Andersen, Trond; Ma, Qiong; Lui, Chun-Hung; Nair, Nityan; Gabor, Nathaniel; Young, Andrea; Fang, Wenjing; Watanabe, Kenji; Taniguchi, Takashi; Kong, Jing; Gedik, Nuh; Jarillo-Herrero, Pablo

    2015-03-01

    Combining two-dimensional materials into vertical heterostructures reveals diverse, intriguing phenomena and provides a novel way of engineering materials with desired electronic properties. Placing graphene on hexagonal boron nitride (hBN) has given particularly interesting results, including enhanced mobility, opening of a band gap, and highly controllable photo-induced doping. We explore the photoresponse of vertical graphene-hBN-graphene heterostructures in a high electronic temperature regime where thermionic emission dominates. Near the charge neutral point, we observe a pronounced conductance peak, which we attribute to a cooling bottleneck that appears at low carrier density, thus suggesting hot carrier enhanced thermionic emission. To further investigate the mechanism by which current is generated, we conduct two-pulse correlation measurements and study the temporal dynamics of the system. We observe a positive correlation, implying that the hot carriers thermalize before crossing the hBN barrier. Finally, we propose an advanced, modified two-temperature model, which allows for numerical simulations that are consistent with our measurements.

  1. Dielectric Genome of van der Waals Heterostructures.

    PubMed

    Andersen, Kirsten; Latini, Simone; Thygesen, Kristian S

    2015-07-01

    Vertical stacking of two-dimensional (2D) crystals, such as graphene and hexagonal boron nitride, has recently lead to a new class of materials known as van der Waals heterostructures (vdWHs) with unique and highly tunable electronic properties. Ab initio calculations should in principle provide a powerful tool for modeling and guiding the design of vdWHs, but in their traditional form such calculations are only feasible for commensurable structures with a few layers. Here we show that the dielectric properties of realistic, incommensurable vdWHs comprising hundreds of layers can be efficiently calculated using a multiscale approach where the dielectric functions of the individual layers (the dielectric building blocks) are computed ab initio and coupled together via the long-range Coulomb interaction. We use the method to illustrate the 2D-3D transition of the dielectric function of multilayer MoS2 crystals, the hybridization of quantum plasmons in thick graphene/hBN heterostructures, and to demonstrate the intricate effect of substrate screening on the non-Rydberg exciton series in supported WS2. The dielectric building blocks for a variety of 2D crystals are available in an open database together with the software for solving the coupled electrodynamic equations. PMID:26047386

  2. Designing heterostructures with higher-temperature superconductivity

    NASA Astrophysics Data System (ADS)

    Le Hur, Karyn; Chung, Chung-Hou; Paul, I.

    2011-07-01

    We propose to increase the superconducting transition temperature Tc of strongly correlated materials by designing heterostructures which exhibit a high pairing energy as a result of magnetic fluctuations. More precisely, applying an effective theory of the doped Mott insulator, we envisage a bilayer Hubbard system where both layers exhibit intrinsic intralayer (intraband) d-wave superconducting correlations. Introducing a finite asymmetry between the hole densities of the two layers such that one layer becomes slightly more underdoped and the other more overdoped, we show a visible enhancement of Tc compared to the optimally doped isolated layer. Using the bonding and antibonding band basis, we show that the mechanism behind this enhancement of Tc is the interband pairing correlation mediated by the hole asymmetry which strives to decrease the paramagnetic nodal contribution to the superfluid stiffness. For two identical layers, Tc remains comparable to that of the isolated layer until moderate values of the interlayer single-particle tunneling term. These heterostructures shed new light on fundamental questions related to superconductivity.

  3. Raman Characterization of Graphene and 2D TMD Heterostructures

    NASA Astrophysics Data System (ADS)

    Derby, Benjamin; Hight Walker, Angela

    2015-03-01

    We report efforts to produce and characterize graphene and two-dimensional transition-metal dichalcogenides (TMD) heterostructures. Using PDMS stamps, exfoliation of graphene, MoS2, h-BN, and TaS2 precedes the stacking of these mono- and few layers into heterostructures. The goal is to engineer mis-orientation to enhanced Raman signatures of various layers within the heterostructures. Previous studies have reported a Raman signal strength that is angle dependent between bi-layers. Using resonant Raman spectroscopy, we probe the quality of these constructed heterostructures. Ultimately, we plan to combine our optical measurements with an applied magnetic field to probe the complex magneto-Raman interaction. Previous studies show a magneto-phonon resonance at specific field strengths and laser excitations. Our results to date will be summarized.

  4. Equivalent Circuit of a Heterostructure with Multiple Quantum Wells

    NASA Astrophysics Data System (ADS)

    Davydov, V. N.; Novikov, D. A.

    2015-11-01

    Based on the consideration of physical processes in a heterostructure with quantum wells (QW), its equivalent circuit is constructed including a barrier capacitance and a differential resistance of the p-n junction, capacitance and resistance of charge relaxation in QW, and resistance of free charge carrier delivery to QW. Analytical expressions for the equivalent capacity and equivalent resistance of the heterostructure for a serial substitution circuit are derived, and behavior of the equivalent parameters attendant to changes of the test signal frequency is analyzed. Results of experimental investigation of the capacitive and resistive properties of the heterostructures with QW based on the InGaN/GaN barriers confirm the calculated dependences of their equivalent parameters and demonstrate their dependence on the special features of the kinetic properties of the heterostructures.

  5. 2D materials and van der Waals heterostructures.

    PubMed

    Novoselov, K S; Mishchenko, A; Carvalho, A; Castro Neto, A H

    2016-07-29

    The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With these new materials, truly 2D physics has begun to appear (for instance, the absence of long-range order, 2D excitons, commensurate-incommensurate transition, etc.). Novel heterostructure devices--such as tunneling transistors, resonant tunneling diodes, and light-emitting diodes--are also starting to emerge. Composed from individual 2D crystals, such devices use the properties of those materials to create functionalities that are not accessible in other heterostructures. Here we review the properties of novel 2D crystals and examine how their properties are used in new heterostructure devices. PMID:27471306

  6. Method and apparatus for selectively annealing heterostructures using microwave

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A. (Inventor); Brain, Ruth A. (Inventor); Barmatz, Martin B. (Inventor)

    1998-01-01

    The present invention discloses a process for selectively annealing heterostructures using microwaves. A heterostructure, comprised of a material having higher microwave absorption and a material having lower microwave absorption, is exposed to microwaves in the cavity. The higher microwave absorbing material absorbs the microwaves and selectively heats while the lower microwave absorbing material absorbs small amounts of microwaves and minimally heats. The higher microwave absorbing material is thereby annealed onto the less absorbing material which is thermally isolated.

  7. Method and apparatus for selectively annealing heterostructures using microwaves

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A. (Inventor); Brain, Ruth A. (Inventor); Barmatz, Martin B. (Inventor)

    1998-01-01

    The present invention discloses a process for selectively annealing heterostructures using microwaves. A heterostructure, comprised of a material having higher microwave absorption and a material having lower microwave absorption, is exposed to microwaves in the cavity. The higher microwave absorbing material absorbs the microwaves and selectively heats while the lower microwave absorbing material absorbs small amounts of microwaves and minimally heats. The higher microwave absorbing material is thereby annealed onto the less absorbing material which is thermally isolated.

  8. Vertical Transport in Ferroelectric/Superconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Begon-Lours, Laura; Trastoy, Juan; Bernard, Rozenn; Jacquet, Eric; Carretero, Cecile; Bouzehouane, Karim; Fusil, Stephane; Garcia, Vincent; Xavier, Stephane; Girod, Stephanie; Deranlot, Cyrile; Bibes, Manuel; Barthelemy, Agnes; Villegas, Javier E.

    2015-03-01

    We study electric field-effects in superconducting films by measuring vertical transport in ferroelectric/superconductor heterostructures. These are based on ultrathin (4 to 8 nm thick) BiFeO3-Mn grown on YBa2Cu3O7 by pulsed laser deposition. Nanoscale contacts are defined on the BiFeO3 via a series of nanofabrication steps which include e-beam lithography, metal deposition (Nb or Co capped with Pt) and lift-off. Conductive-tip atomic force microscopy and piezoresponse force microscopy are used to characterize the transport across the ferroelectric barrier as a function of its polarization (up/down). The observed electro-resistance, measured at various temperatures, allows studying the different electric-field screening in the normal and superconducting states. Work supported by DIM Oxymore.

  9. Giant switchable Rashba effect in oxide heterostructures

    SciTech Connect

    Zhong, Zhicheng; Si, Liang; Zhang, Qinfang; Yin, Wei-Guo; Yunoki, Seiji; Held, Karsten

    2015-03-01

    One of the most fundamental phenomena and a reminder of the electron’s relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction. Interfacing ferroelectric BaTiO₃ and a 5d (or 4d) transition metal oxide with a large spin-orbit coupling, Ba(Os,Ir,Ru)O₃, we show that giant Rashba spin splittings are indeed possible and even controllable by an external electric field. Based on density functional theory and a microscopic tight binding understanding, we conclude that the electric field is amplified and stored as a ferroelectric Ti-O distortion which, through the network of oxygen octahedra, induces a large (Os,Ir,Ru)-O distortion. The BaTiO₃/Ba(Os,Ru,Ir)O₃ heterostructure is hence the ideal test station for switching and studying the Rashba effect and allows applications at room temperature.

  10. Tunnelling in van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Mishchenko, Artem; Novoselov, Kostya; Geim, Andre; Eaves, Laurence; Falko, Vladimir

    When graphene and other conductive two-dimensional (2D) materials are separated by an atomically thin insulating 2D crystal, quantum mechanical tunnelling leads to appreciable current between two 2D conductors due to the overlap of their wavefunctions. These tunnel devices demonstrate interesting physics and potential for applications: such effects as resonant tunnelling, negative differential conductance, light emission and detection have already been demonstrated. In this presentation we will outline the current status and perspectives of tunnelling transistors based on 2D materials assembled into van der Waals heterostructures. Particularly, we will present results on mono- and bilayer graphene tunnelling, tunnelling in 2D crystal-based quantum wells, and tunnelling in superconducting 2D materials. Such effects as momentum and chirality conservation, phonon- and impurity-assisted tunnelling will also be discussed. Finally, we will ponder the implications of discovered effects for practical applications.

  11. Tunable hyperbolic metamaterials utilizing phase change heterostructures

    SciTech Connect

    Krishnamoorthy, Harish N. S.; Menon, Vinod M.; Zhou, You; Ramanathan, Shriram; Narimanov, Evgenii

    2014-03-24

    We present a metal-free tunable anisotropic metamaterial where the iso-frequency surface is tuned from elliptical to hyperbolic dispersion by exploiting the metal-insulator phase transition in the correlated material vanadium dioxide (VO{sub 2}). Using VO{sub 2}-TiO{sub 2} heterostructures, we demonstrate the transition in the effective dielectric constant parallel to the layers to undergo a sign change from positive to negative as the VO{sub 2} undergoes the phase transition. The possibility to tune the iso-frequency surface in real time using external perturbations such as temperature, voltage, or optical pulses creates new avenues for controlling light-matter interaction.

  12. Giant switchable Rashba effect in oxide heterostructures

    DOE PAGESBeta

    Zhong, Zhicheng; Si, Liang; Zhang, Qinfang; Yin, Wei-Guo; Yunoki, Seiji; Held, Karsten

    2015-03-01

    One of the most fundamental phenomena and a reminder of the electron’s relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction. Interfacing ferroelectric BaTiO₃ and a 5d (or 4d) transition metal oxide with a large spin-orbit coupling, Ba(Os,Ir,Ru)O₃, we show that giant Rashba spin splittings are indeed possible and even controllable by an external electric field. Based on density functional theory and a microscopic tight binding understanding, we conclude that the electric field is amplified and stored as a ferroelectric Ti-O distortion which, through the network of oxygen octahedra, inducesmore » a large (Os,Ir,Ru)-O distortion. The BaTiO₃/Ba(Os,Ru,Ir)O₃ heterostructure is hence the ideal test station for switching and studying the Rashba effect and allows applications at room temperature.« less

  13. Magnetoelectric imaging of multiferroic heterostructures (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Ghidini, Massimo; Lesaine, Arnaud; Zhu, Bonan; Moya, Xavier; Yan, Wenjing; Crossley, Sam; Nair, Bhasi; Mansell, Rhodri; Cowburn, Russell P.; Barnes, Crispin H. W.; Kronast, Florian; Valencia, Sergio; Maccherozzi, Francesco; Dhesi, Sarnjeet S.; Mathur, Neil

    2015-09-01

    Electrical control of magnetism has been demonstrated in multiferroic compounds and ferromagnetic semiconductors, but electrical switching of a substantial net magnetization at room temperature has not been demonstrated in these materials. This goal has instead been achieved in heterostructures comprising ferromagnetic films in which electrically driven magnetic changes arise due to strain or exchange bias from ferroic substrates, or due to charge effects induced by a gate. However, previous work focused on electrical switching of an in-plane magnetization or involved the assistance of applied magnetic fields. In heterostructures made of juxtaposed ferroelectric and ferromagnetic layers, we have shown electrical control with no applied magnetic field of the perpendicular magnetization of small features [1] and of magnetic stripe domains patterns [2]. Here we investigate Ni81Fe19 films on ferroelectric substrates with and without buffer layers of Cu, whose presence precludes charge-mediated coupling. Ni81Fe19 has virtually zero magnetostriction, but sufficiently thin films show large magnetostriction, and thus, on increasing film thickness through the threshold for zero magnetostriction, we have seeked the crossover from charge- to strain-mediated coupling. We will then show that strain associated with the motion of 90°- ferroelectric domain walls in a BaTiO3 substrate, can switch the magnetization of an array of overlying single-domain Ni dots. [1] M. Ghidini, R. Pellicelli, J. L. Prieto, X. Moya, J. Soussi, J. Briscoe, S. Dunn and N. D. Mathur, Nature Communications 4 (2013) 1453. [2] M. Ghidini, F.Maccherozzi, X. Moya, L. C. Phillips, W.Yan, J. Soussi, N. Métallier, M.Vickers, , N. -J.Steinke, R. Mansell, C. H. W. Barnes, S. S. Dhesi, and N. D. Mathur, Adv. Mater.doi: 10.1002/adma.201404799 (2015).

  14. Heterostructures of Topological Insulators and Superconductors

    NASA Astrophysics Data System (ADS)

    Lababidi, Mahmoud

    Topological insulators (TI), such as Bi2Se 3, are a new class of quantum materials discovered recently. They are insulating in the bulk but can conduct on the surfaces. The robust surface states of three-dimensional strong TIs form a unique two-dimensional system of massless electrons, known as a helical metal, with a linear energy-momentum dispersion and spin-momentum locking. While these surface modes alone have spurred great interest, their interaction with superconductors (S) in close proximity has opened up opportunities to engineer topological superconductivity using TI-S heterostructures. This thesis is a microscopic, self-consistent theoretical investigation of the interplay between TI and superconductors. Three types of TI-based heterostructures with increasing complexity are studied in detail. We first present a detailed study of the coupling between a metal and a topological insulator. We compute the spin-active scattering matrix for electrons coming from the metal incident on the metal-TI interface. We find that there exists a critical incident angle, where perfect spin-flip occurs as the incoming electron is reflected. We discuss the origin of this phenomena and its potential implications in spintronics. We then compute the local spectrum at the metal-TI interface, and examine its evolution from the tunneling limit (bad contact) to the strong coupling limit (good contact). The calculations are done using two complementary approaches; in a continuum model based on a k·p Hamiltonian a wave function matching approach is taken and the lattice model requires the use of lattice Green's functions. The study of metal-TI interface lays the foundation for our subsequent theory of S-TI interface. Next we carry out microscopic, self-consistent calculations of the superconducting order parameter and pairing correlations near a S-TI interface, where S is an s-wave superconductor. We discuss the suppression of the order parameter by the topological insulator and

  15. Epitaxial piezoelectric thick film heterostructures on silicon

    NASA Astrophysics Data System (ADS)

    Kim, Dong Min

    The significantly higher dielectric permittivity, piezoelectric coefficients and electromechanical coupling coefficients of single crystal relaxor ferroelectrics make them very attractive for medical ultrasound transducers and microelectromechanical systems (MEMS) applications. The potential impact of thin-film relaxor ferroelectrics in integrated actuators and sensor on silicon has stimulated research on the growth and characterization of epitaxial piezoelectric thin films. We have fabricated heterostructures by (1) synthesizing optimally-oriented, epitaxial thin films of Pb(Mg1/3Nb2/3)O3-PbTiO 3 (PMN-PT) on miscut (001) Si wafers with epitaxial (001) SrTiO 3 template layers, where the single crystal form is known to have the giant piezoelectric response, and (2) nano-structuring to reduce the constraint imposed by the underlying silicon substrate. Up to now, the longitudinal piezoelectric coefficient (d33) values of PMN and PMN-PT thin films range from 50 to 200 pC/N have been reported, which are far inferior to the properties of bulk single crystals value (d33 ˜ 2000 pC/N). These might be attributed to substrate constraints, pyrochlore phases and other effects. Here, we have realized the giant d33 values by fabricating epitaxial PMN-PT thick films on silicon. When the PMN-PT film was subdivided into ˜1 mum2 capacitors by focused ion beam processing, a 4 mum thick film shows a low-field d33 of 800 pm/V that increases to over 1200 pm/V under bias, which is the highest d33 value ever realized on silicon substrates. These high piezo-reponse PMN-PT epitaxial heterostructures can be used for multilayered MEMS devices which function with low driving voltage, high frequency ultrasound transducer arrays for medical imaging, and capacitors for charge and energy storage. Since these PMN-PT films are epitaxially integrated with the silicon, they can make use of the well-developed fabrication process for patterning and micromachining of this large-area, cost

  16. Growth of Novel Semiconducting Nano and Heterostructures

    NASA Astrophysics Data System (ADS)

    Rathi, Somilkumar J.

    This dissertation presents research findings on the three materials systems: lateral Si nanowires (SiNW), In2Se3/Bi 2Se3 heterostructures and graphene. The first part of the thesis was focused on the growth and characterization of lateral SiNW. Lateral here refers to wires growing along the plane of substrate; vertical NW on the other hand grow out of the plane of substrate. It was found, using the Au-seeded vapor -- liquid -- solid technique, that epitaxial single-crystal SiNW can be grown laterally along Si(111) substrates that have been miscut toward [11- 2]. The ratio of lateral-to-vertical NW was found to increase as the miscut angle increased and as disilane pressure and substrate temperature decreased. Based on this observation, growth parameters were identified whereby all of the deposited Au seeds formed lateral NW. Furthermore, the nanofaceted substrate guided the growth via a mechanism that involved pinning of the trijunction at the liquid/solid interface of the growing nanowire. Next, the growth of selenide heterostructures was explored. Specifically, molecular beam epitaxy was utilized to grow In2Se3 and Bi2Se3 films on h-BN, highly oriented pyrolytic graphite and Si(111) substrates. Growth optimizations of In2Se3 and Bi2Se3 films were carried out by systematically varying the growth parameters. While the growth of these films was demonstrated on h-BN and HOPG surface, the majority of the effort was focused on growth on Si(111). Atomically flat terraces that extended laterally for several hundred nm, which were separated by single quintuple layer high steps characterized surface of the best In2Se3 films grown on Si(111). These In2Se3 films were suitable for subsequent high quality epitaxy of Bi2Se3 . The last part of this dissertation was focused on a recently initiated and ongoing study of graphene growth on liquid metal surfaces. The initial part of the study comprised a successful modification of an existing growth system to accommodate graphene

  17. Synthesis and Investigation of van der Waals Heterostructures

    NASA Astrophysics Data System (ADS)

    McCreary, Kathleen; Hanbicki, Aubrey; Culbertson, James; Currie, Marc; Jonker, Berend

    2015-03-01

    The recent isolation of single layers of transition metal dichalcogenides (TMD) has demonstrated that reducing dimensionality can alter the material properties. In particular, MoS2, MoSe2, WS2, and WSe2 exhibit an abrupt transition from indirect to direct bandgap semiconductors at monolayer thickness. Monolayer TMDs are promising materials for electronic components due to their high mobility, high on/off ratio, and low standby power dissipation. Additionally, selective layer-by-layer stacking to form van der Waals (vdW) heterostructures may provide the ability to controllably engineer electronic, optic, and spintronic properties. Recently, several methods were investigated to achieve vdW heterostructures including sequential exfoliation, stacking of chemical vapor deposition (CVD) grown monolayers, and epitaxial growth of bilayers. We detail our CVD synthesis of the monolayer TMDs (MoS2, MoSe2, WS2 and WSe2) and the subsequent fabrication and characterization of vdW heterostructures. In our heterostructures, we observe a dramatic decrease in PL intensity compared to the monolayer constituents. The Raman spectra exhibit clear and distinct differences from a superposition of monolayer spectra, demonstrating that interactions across the van der Waals interface in these heterostructures may significantly modify the net electronic properties. We find the observed behaviors are influenced by many factors, including charge transfer, substrate effects, stacking sequence, as well as intra- and inter-layer exciton formation, which will be discussed here.

  18. Lateral and Vertical Two-Dimensional Layered Topological Insulator Heterostructures.

    PubMed

    Li, Yanbin; Zhang, Jinsong; Zheng, Guangyuan; Sun, Yongming; Hong, Seung Sae; Xiong, Feng; Wang, Shuang; Lee, Hye Ryoung; Cui, Yi

    2015-11-24

    The heterostructured configuration between two-dimensional (2D) semiconductor materials has enabled the engineering of the band gap and the design of novel devices. So far, the synthesis of single-component topological insulator (TI) 2D materials such as Bi2Se3, Bi2Te3, and Sb2Te3 has been achieved through vapor phase growth and molecular beam epitaxy; however, the spatial controlled fabrication of 2D lateral heterostructures in these systems has not been demonstrated yet. Here, we report an in situ two-step synthesis process to form TI lateral heterostructures. Scanning transmission electron microscopy and energy-dispersive X-ray mapping results show the successful spatial control of chemical composition in these as-prepared heterostructures. The edge-induced growth mechanism is revealed by the ex situ atomic force microscope measurements. Electrical transport studies demonstrate the existence of p-n junctions in Bi2Te3/Sb2Te3 heterostructures. PMID:26468661

  19. Vortex jump behavior in coupled nanomagnetic heterostructures

    SciTech Connect

    Zhang, S.; Phatak, C.; Petford-Long, A. K.; Heinonen, O.

    2014-11-24

    The spin configuration and magnetic behavior in patterned nanostructures can be controlled by manipulating the interplay between the competing energy terms. This in turn requires fundamental knowledge of the magnetic interactions at the local nanometer scale. Here, we report on the spin structure and magnetization behavior of patterned discs containing exchange coupled ferromagnetic layers with additional exchange bias to an antiferromagnetic layer. The magnetization reversal was explored by direct local visualization of the domain behavior using in-situ Lorentz transmission electron microscopy, from which quantitative magnetic induction maps were reconstructed. The roles of the main competing energy terms were elucidated and the reversal mechanism was identified as a coupled phenomenon of incoherent rotation in the exchange-biased layer and localized vortex nucleation and discontinuous propagation in the free layer, including an anomalous jump in the trajectory. The observations were supported by micromagnetic simulations and modeled phase shift simulations. The work presented here provides fundamental insights into opportunities for macroscopic control of the energy landscape of magnetic heterostructures for functional applications.

  20. Geometric Hall effects in topological insulator heterostructures

    NASA Astrophysics Data System (ADS)

    Yasuda, K.; Wakatsuki, R.; Morimoto, T.; Yoshimi, R.; Tsukazaki, A.; Takahashi, K. S.; Ezawa, M.; Kawasaki, M.; Nagaosa, N.; Tokura, Y.

    2016-06-01

    Geometry, both in momentum and in real space, plays an important role in the electronic dynamics of condensed matter systems. Among them, the Berry phase associated with nontrivial geometry can be an origin of the transverse motion of electrons, giving rise to various geometric effects such as the anomalous, spin and topological Hall effects. Here, we report two unconventional manifestations of Hall physics: a sign-reversal of the anomalous Hall effect, and the emergence of a topological Hall effect in magnetic/non-magnetic topological insulator heterostructures, Crx(Bi1-ySby)2-xTe3/(Bi1-ySby)2Te3. The sign-reversal in the anomalous Hall effect is driven by a Rashba splitting at the bulk bands, which is caused by the broken spatial inversion symmetry. Instead, the topological Hall effect arises in a wide temperature range below the Curie temperature, in a region where the magnetic-field dependence of the Hall resistance largely deviates from the magnetization. Its origin is assigned to the formation of a Néel-type skyrmion induced by the Dzyaloshinskii-Moriya interaction.

  1. Graphene/Si-nanowire heterostructure molecular sensors

    PubMed Central

    Kim, Jungkil; Oh, Si Duk; Kim, Ju Hwan; Shin, Dong Hee; Kim, Sung; Choi, Suk-Ho

    2014-01-01

    Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism. PMID:24947403

  2. MBE HgCdTe heterostructure detectors

    NASA Technical Reports Server (NTRS)

    Schulman, Joel N.; Wu, Owen K.

    1990-01-01

    HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

  3. Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

    NASA Astrophysics Data System (ADS)

    Park, Hee Chul; Myung, Nojoon; Lee, Seung Joo

    We investigate spin transport through ferromagnetic graphene vertical heterostructures where a sandwiched tunneling layer is either a normal or ferroelectric insulator. We show that the spin-polarization of the tunneling current is electrically controlled via gate voltages. We also demonstrate that the tunneling current of Dirac fermions can be prohibited when the spin configuration of ferromagnetic graphene sheets is opposite. Giant electroresistance can thus be developed by using the proposed heterostructure in this study. The effects of temperature on spin transport and the giant electroresistance ratio are also investigated. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures through electric fields via gate and bias electrodes. The research leading to these results has received funding from the European Union Seventh Framework Programme under grant agreement No604391 Graphene Flagship, Project Code (IBS-R024-D1), and the NRF grant funded by MSIP(No. 2014-066298).

  4. Synthesis of Large Scale MoS2 -Graphene Heterostructures

    NASA Astrophysics Data System (ADS)

    McCreary, Kathleen; Hanbicki, Aubrey; Friedman, Adam; Robinson, Jeremy; Jonker, Berend

    2014-03-01

    A rapidly progressing field involves the stacking of multiple two dimensional materials to form heterostructures. These heterosctructures have exhibited unique and interesting properties. For the most part, heterostructure devices are produced via mechanical exfoliation followed by careful aligning and stacking of the various components, limiting dimensions to micron-scale devices. Chemical vapor deposition (CVD) has proven to be a useful tool in the production of graphene and has very recently been investigated as a means for the growth of other 2D materials such as MoS2, hexagonal boron nitride and WS2. Using a two-step CVD process we are able to synthesize MoS2 on CVD grown graphene. AFM and Raman microscopy of the MoS2-graphene heterostructure show a uniform and continuous film on the cm scale.

  5. Spontaneous stacking faults in van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Boussinot, G.

    2016-08-01

    The rapid developments in the manipulation of two-dimensional monoatomic layers such as graphene or h-BN allow one to create heterostructures consisting of possibly many chemically different layers, stacked owing to van der Waals attraction. We propose a Frenkel-Kontorova model including a transverse degree of freedom in order to describe local deformations in these heterostructures. We study the case where two dissimilar monolayers are alternatively stacked, and find that stacking faults may emerge spontaneously for a large enough number of stacked layers as a result of the competition between adhesion and elastic energies. This symmetry-breaking transition should become of fundamental importance for the description of three-dimensional van der Waals heterostructures as soon as a precise control on the lattice orientation of the van der Waals layers is achieved.

  6. Two-dimensional heterostructures: fabrication, characterization, and application.

    PubMed

    Wang, Hong; Liu, Fucai; Fu, Wei; Fang, Zheyu; Zhou, Wu; Liu, Zheng

    2014-11-01

    Two-dimensional (2D) materials such as graphene, hexagonal boron nitrides (hBN), and transition metal dichalcogenides (TMDs, e.g., MoS2) have attracted considerable attention in the past few years because of their novel properties and versatile potential applications. These 2D layers can be integrated into a monolayer (lateral 2D heterostructure) or a multilayer stack (vertical 2D heterostructure). The resulting artificial 2D structures provide access to new properties and applications beyond their component 2D atomic crystals and hence, they are emerging as a new exciting field of research. In this article, we review recent progress on the fabrication, characterization, and applications of various 2D heterostructures. PMID:25219598

  7. Electron scattering times in ZnO based polar heterostructures

    SciTech Connect

    Falson, J.; Kozuka, Y.; Smet, J. H.; Arima, T.; Tsukazaki, A.; Kawasaki, M.

    2015-08-24

    The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10{sup 6} cm{sup 2}/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors.

  8. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    NASA Astrophysics Data System (ADS)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  9. Two-dimensional heterostructures: fabrication, characterization, and application

    DOE PAGESBeta

    Wang, Hong; Liu, Fucai; Fu, Wei; Fang, Zheyu; Zhou, Wu; Liu, Zheng

    2014-08-13

    Two-dimensional (2D) materials such as graphene, hexagonal boron nitrides (hBN), and transition metal dichalcogenides (TMDs, e.g., MoS2) have attracted considerable attention in the past few years because of their novel properties and versatile potential applications. These 2D layers can be integrated into a monolayer (lateral 2D heterostructure) or a multilayer stack (vertical 2D heterostructure). The resulting artificial 2D structures provide access to new properties and applications beyond their component 2D atomic crystals and hence, they are emerging as a new exciting field of research. Lastly, in this article, we review recent progress on the fabrication, characterization, and applications of variousmore » 2D heterostructures.« less

  10. Postsynthesis of h‐BN/Graphene Heterostructures Inside a STEM

    PubMed Central

    Tizei, Luiz H. G.; Sato, Yohei; Lin, Yung‐Chang; Yeh, Chao‐Hui; Chiu, Po‐Wen; Terauchi, Masami; Iijima, Sumio

    2015-01-01

    Combinations of 2D materials with different physical properties can form heterostructures with modified electrical, mechanical, magnetic, and optical properties. The direct observation of a lateral heterostructure synthesis is reported by epitaxial in‐plane graphene growth from the step‐edge of hexagonal BN (h‐BN) within a scanning transmission electron microscope chamber. Residual hydrocarbon in the chamber is the carbon source. The growth interface between h‐BN and graphene is atomically identified as largely N–C bonds. This postgrowth method can form graphene nanoribbons connecting two h‐BN domains with different twisting angles, as well as isolated carbon islands with arbitrary shapes embedded in the h‐BN layer. The electronic properties of the vertically stacked h‐BN/graphene heterostructures are investigated by electron energy‐loss spectroscopy (EELS). Low‐loss EELS analysis of the dielectric response suggests a robust coupling effect between the graphene and h‐BN layers. PMID:26618896

  11. Two-dimensional heterostructures: fabrication, characterization, and application

    SciTech Connect

    Wang, Hong; Liu, Fucai; Fu, Wei; Fang, Zheyu; Zhou, Wu; Liu, Zheng

    2014-08-13

    Two-dimensional (2D) materials such as graphene, hexagonal boron nitrides (hBN), and transition metal dichalcogenides (TMDs, e.g., MoS2) have attracted considerable attention in the past few years because of their novel properties and versatile potential applications. These 2D layers can be integrated into a monolayer (lateral 2D heterostructure) or a multilayer stack (vertical 2D heterostructure). The resulting artificial 2D structures provide access to new properties and applications beyond their component 2D atomic crystals and hence, they are emerging as a new exciting field of research. Lastly, in this article, we review recent progress on the fabrication, characterization, and applications of various 2D heterostructures.

  12. Photonic Heterostructures with Properties of Ferroelectrics and Light Polarizers

    SciTech Connect

    Palto, S. P. Draginda, Yu. A.

    2010-11-15

    The optical and electro-optical properties of a new type of photonic heterostructure composed of alternating ferroelectric molecular layers and optically anisotropic layers of another material are considered. A numerical simulation of the real prototype of this heterostructure, which can be prepared by the Langmuir-Blodgett method from layers of a ferroelectric copolymer (polyvinylidene fluoride trifluoroethylene) and an azo dye with photoinduced optical anisotropy, has been performed. It is shown that this heterostructure has pronounced polarization optical properties and yields a significant change in the polarization state of light at the photonic band edges in the ranges of the maximum density of photon states. The latter property can be used to obtain an enhanced electro-optic effect at small spectral shifts of the photonic band (the latter can be provided by the piezoelectric effect in ferroelectric layers).

  13. Magnetometory of AlGaN/GaN heterostructure wafers

    NASA Astrophysics Data System (ADS)

    Tsubaki, K.; Maeda, N.; Saitoh, T.; Kobayashi, N.

    2005-06-01

    AlGaN/GaN heterostructure wafers are becoming a key technology for next generation cellar-phone telecommunication system because of their potential for high-performance microwave applications. Therefore, the electronic properties of a 2DEG in AlGaN/GaN heterostructures have recently been discussed. In this paper, we performed the extraordinary Hall effect measurement and the SQUID magnetometory of AlGaN/GaN heterostructure wafer at low temperature. The AlGaN/GaN heterostructures were grown by low-pressure metal-organic chemical vapour phase epitaxy on (0001) SiC substrate using AlN buffers. The electron mobility and electron concentration at 4.2 K are 9,540cm2/V s and 6.6 × 1012cm-2, respectively. In the extraordinary Hall effect measurement of AlGaN/GaN heterostructures, the hysteresis of Hall resistance appeared below 4.5 K and disappeared above 4.5 K. On the other hand, the hysteresis of magnetometric data obtained by SQUID magnetometory appears near zero magnetic field when the temperature is lower than 4.5 K. At the temperature larger than 4.5 K, the hysteresis of magnetometric data disappears. And the slopes of magnetometric data with respect to magnetic field become lower as obeying Currie-Weiss law and the Curie temperature TC is 4.5 K. Agreement of TC measured by the extraordinary Hall effect and the SQUID magnetometory implies the ferromagnetism at the AlGaN/GaN heterojunction. However, the conformation of the ferromagnetism of AlGaN/GaN heterostructure is still difficult and the detailed physical mechanism is still unclear.

  14. Barrier inhomogeneities at vertically stacked graphene-based heterostructures

    NASA Astrophysics Data System (ADS)

    Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito

    2013-12-01

    The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of

  15. High-frequency dynamics of hybrid oxide Josephson heterostructures

    NASA Astrophysics Data System (ADS)

    Komissinskiy, P.; Ovsyannikov, G. A.; Constantinian, K. Y.; Kislinski, Y. V.; Borisenko, I. V.; Soloviev, I. I.; Kornev, V. K.; Goldobin, E.; Winkler, D.

    2008-07-01

    We summarize our results on Josephson heterostructures Nb/Au/YBa2Cu3Ox that combine conventional (S) and oxide high- Tc superconductors with a dominant d -wave symmetry of the superconducting order parameter (D). The heterostructures were fabricated on (001) and (1 1 20) YBa2Cu3Ox films grown by pulsed laser deposition. The structural and surface studies of the (1 1 20) YBa2Cu3Ox thin films reveal nanofaceted surface structure with two facet domain orientations, which are attributed as (001) and (110)-oriented surfaces of YBa2Cu3Ox and result in S/D(001) and S/D(110) nanojunctions formed on the facets. Electrophysical properties of the Nb/Au/YBa2Cu3Ox heterostructures are investigated by the electrical and magnetic measurements at low temperatures and analyzed within the faceting scenario. The superconducting current-phase relation (CPR) of the heterostructures with finite first and second harmonics is derived from the Shapiro steps, which appear in the I-V curves of the heterostructures irradiated at frequencies up to 100 GHz. The experimental positions and amplitudes of the Shapiro steps are explained within the modified resistive Josephson junction model, where the second harmonic of the CPR and capacitance of the Josephson junctions are taken into account. We experimentally observe a crossover from a lumped to a distributed Josephson junction limit for the size of the heterostructures smaller than Josephson penetration depth. The effect is attributed to the variations of the harmonics of the superconducting CPR across the heterojunction, which may give rise to splintered vortices of magnetic flux quantum. Our investigations of parameters and phenomena that are specific for superconductors having d -wave symmetry of the superconducting order parameter may be of importance for applications such as high-frequency detectors and novel elements of a possible quantum computer.

  16. Ion-implanted planar-buried-heterostructure diode laser

    DOEpatents

    Brennan, Thomas M.; Hammons, Burrell E.; Myers, David R.; Vawter, Gregory A.

    1991-01-01

    A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

  17. Negative terahertz conductivity in remotely doped graphene bilayer heterostructures

    SciTech Connect

    Ryzhii, V.; Ryzhii, M.; Mitin, V.; Shur, M. S.; Otsuji, T.

    2015-11-14

    Injection or optical generation of electrons and holes in graphene bilayers (GBLs) can result in the interband population inversion enabling the terahertz (THz) radiation lasing. The intraband radiative processes compete with the interband transitions. We demonstrate that remote doping enhances the indirect interband generation of photons in the proposed GBL heterostructures. Therefore, such remote doping helps to surpass the intraband (Drude) absorption, and results in large absolute values of the negative dynamic THz conductivity in a wide range of frequencies at elevated (including room) temperatures. The remotely doped GBL heterostructure THz lasers are expected to achieve higher THz gain compared with previously proposed GBL-based THz lasers.

  18. Vertical-cavity in-plane heterostructures: Physics and applications

    SciTech Connect

    Taghizadeh, Alireza; Mørk, Jesper; Chung, Il-Sug

    2015-11-02

    We show that in-plane (lateral) heterostructures realized in vertical cavities with high contrast grating reflectors can be used to significantly modify the anisotropic dispersion curvature, also interpreted as the photon effective mass. This design freedom enables exotic configurations of heterostructures and many interesting applications. The effects of the anisotropic photon effective mass on the mode confinement, mode spacing, and transverse modes are investigated. As a possible application, the method of boosting the speed of diode lasers by engineering the photon-photon resonance is discussed. Based on this platform, we propose a system of two laterally coupled cavities, which shows the breaking of parity-time symmetry in vertical cavity structures.

  19. Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

    SciTech Connect

    Singh, R. K.

    2003-04-16

    The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.

  20. Electronic transport in graphene-based heterostructures

    SciTech Connect

    Tan, J. Y.; Avsar, A.; Balakrishnan, J.; Taychatanapat, T.; O'Farrell, E. C. T.; Eda, G.; Castro Neto, A. H.; Koon, G. K. W.; Özyilmaz, B.; Watanabe, K.; Taniguchi, T.

    2014-05-05

    While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this Letter, we study the surface morphology of 2D BN, gallium selenide (GaSe), and transition metal dichalcogenides (tungsten disulfide (WS{sub 2}) and molybdenum disulfide (MoS{sub 2})) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis shows that these crystals have improved surface roughness (root mean square value of only ∼0.1 nm) compared to conventional SiO{sub 2} substrate. While our results confirm that graphene devices exhibit very high electronic mobility (μ) on BN substrates, graphene devices on WS{sub 2} substrates (G/WS{sub 2}) are equally promising for high quality electronic transport (μ ∼ 38 000 cm{sup 2}/V s at room temperature), followed by G/MoS{sub 2} (μ ∼ 10 000 cm{sup 2}/V s) and G/GaSe (μ ∼ 2200 cm{sup 2}/V s). However, we observe a significant asymmetry in electron and hole conduction in G/WS{sub 2} and G/MoS{sub 2} heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate.

  1. Coupling Magnetism to Electricity in Multiferroic Heterostructures

    SciTech Connect

    Ramesh, R

    2012-02-15

    Complex perovskite oxides exhibit a rich spectrum of functional responses, including magnetism, ferroelectricity, highly correlated electron behavior, superconductivity, etc. The basic materials physics of such materials provide the ideal playground for interdisciplinary scientific exploration. Over the past decade we have been exploring the science of such materials (for example, colossal magnetoresistance, ferroelectricity, etc) in thin-film form by creating epitaxial heterostructures and nanostructures. Among the large number of materials systems, there exists a small set of materials which exhibit multiple order parameters; these are known as multiferroics. Using our work in the field of ferroelectric and ferromagnetic oxides as the background, we are now exploring such materials as epitaxial thin films, as well as nanostructures. Specifically, we are studying the role of thin-film growth, heteroepitaxy, and processing on the basic properties as well as the magnitude of the coupling between the order parameters. In our work we are exploring the switchability of the antiferromagnetic order using this coupling. What is the importance of this work? Antiferromagnets are pervasive in the recording industry. They are used as exchange biasing layers in magnetic tunnel junctions, etc. However, to date there has been no antiferomagnet that is electrically tunable. We believe that the multiferroic BiFeO3 is one compound where this can be observed at room temperature. The next step is to explore the coupling of a ferromagnet to this antiferromagnet through the exchange biasing concept. Ultimately, this will give us the opportunity to switch the magnetic state in a ferromagnet (and therefore the spin polarization direction) by simply applying an electric field to the underlying antiferromagnetic ferroelectric. In this talk, I will describe our progress to date on this exciting possibility.

  2. Broadband Photovoltaic Detectors Based on an Atomically Thin Heterostructure.

    PubMed

    Long, Mingsheng; Liu, Erfu; Wang, Peng; Gao, Anyuan; Xia, Hui; Luo, Wei; Wang, Baigeng; Zeng, Junwen; Fu, Yajun; Xu, Kang; Zhou, Wei; Lv, Yangyang; Yao, Shuhua; Lu, Minghui; Chen, Yanfeng; Ni, Zhenhua; You, Yumeng; Zhang, Xueao; Qin, Shiqiao; Shi, Yi; Hu, Weida; Xing, Dingyu; Miao, Feng

    2016-04-13

    van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown tremendous potential for future applications due to their unique electronic properties and strong light-matter interaction. However, many important optoelectronic applications, such as broadband photodetection, are severely hindered by their limited spectral range and reduced light absorption. Here, we present a p-g-n heterostructure formed by sandwiching graphene with a gapless band structure and wide absorption spectrum in an atomically thin p-n junction to overcome these major limitations. We have successfully demonstrated a MoS2-graphene-WSe2 heterostructure for broadband photodetection in the visible to short-wavelength infrared range at room temperature that exhibits competitive device performance, including a specific detectivity of up to 10(11) Jones in the near-infrared region. Our results pave the way toward the implementation of atomically thin heterostructures for broadband and sensitive optoelectronic applications. PMID:26886761

  3. PT-symmetry breaking in resonant tunneling heterostructures

    NASA Astrophysics Data System (ADS)

    Gorbatsevich, A. A.; Shubin, N. M.

    2016-06-01

    We present fermionic model based on symmetric resonant tunneling heterostructure, which demonstrates spontaneous symmetry breaking in respect to combined operations of space inversion (P) and time reversal (T). PT-symmetry breaking manifests itself in resonance coalescence (collapse of resonances). We show that resonant energies are determined by eigenvalues of auxiliary pseudo-Hermitian PT-invariant Hamiltonian.

  4. Anomalous Electronic Anisotropy Triggered by Ferroelastic Coupling in Multiferroic Heterostructures.

    PubMed

    Ju, Changcheng; Yang, Jan-Chi; Luo, Cheng; Shafer, Padraic; Liu, Heng-Jui; Huang, Yen-Lin; Kuo, Ho-Hung; Xue, Fei; Luo, Chih-Wei; He, Qing; Yu, Pu; Arenholz, Elke; Chen, Long-Qing; Zhu, Jinsong; Lu, Xiaomei; Chu, Ying-Hao

    2016-02-01

    The ferroelastic strain coupling in multiferroic heterostructures is explored aiming at novel physical effects and fascinating functionality. Ferroelastic domain walls in manganites induced by a stripe BiFeO3 template can modulate the electronic transfer and sufficiently block the magnetic ordering, creating a vast anisotropy. The findings suggest the great importance of ferroelastic strain engineering in material modifications. PMID:26640119

  5. Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures.

    PubMed

    Isa, Fabio; Salvalaglio, Marco; Dasilva, Yadira Arroyo Rojas; Meduňa, Mojmír; Barget, Michael; Jung, Arik; Kreiliger, Thomas; Isella, Giovanni; Erni, Rolf; Pezzoli, Fabio; Bonera, Emiliano; Niedermann, Philippe; Gröning, Pierangelo; Montalenti, Francesco; von Känel, Hans

    2016-02-01

    Defect-free mismatched heterostructures on Si substrates are produced by an innovative strategy. The strain relaxation is engineered to occur elastically rather than plastically by combining suitable substrate patterning and vertical crystal growth with compositional grading. Its validity is proven both experimentally and theoretically for the pivotal case of SiGe/Si(001). PMID:26829168

  6. Variable electronic properties of lateral phosphorene-graphene heterostructures.

    PubMed

    Tian, Xiaoqing; Liu, Lin; Du, Yu; Gu, Juan; Xu, Jian-Bin; Yakobson, Boris I

    2015-12-21

    Phosphorene and graphene have a tiny lattice mismatch along the armchair direction, which can result in an atomically sharp in-plane interface. The electronic properties of the lateral heterostructures of phosphorene/graphene are investigated by the first-principles method. Here, we demonstrate that the electronic properties of this type of heterostructure can be highly tunable by the quantum size effects and the externally applied electric field (Eext). At strong Eext, Dirac Fermions can be developed with Fermi velocities around one order smaller than that of graphene. Undoped and hydrogen doped configurations demonstrate three drastically different electronic phases, which reveal the strongly tunable potential of this type of heterostructure. Graphene is a naturally better electrode for phosphorene. The transport properties of two-probe devices of graphene/phosphorene/graphene exhibit tunnelling transport characteristics. Given these results, it is expected that in-plane heterostructures of phosphorene/graphene will present abundant opportunities for applications in optoelectronic and electronic devices. PMID:26554700

  7. Ab initio simulations of pseudomorphic silicene and germanene bidimensional heterostructures

    NASA Astrophysics Data System (ADS)

    Debernardi, Alberto; Marchetti, Luigi

    2016-06-01

    Among the novel two-dimensional (2D) materials, silicene and germanene, which are two honeycomb crystal structures composed of a monolayer of Si and Ge, respectively, have attracted the attention of material scientists because they combine the advantages of the new 2D ultimate-scaled electronics with their compatibility with industrial processes presently based on Si and Ge. We envisage pseudomorphic lateral heterostructures based on ribbons of silicene and germanene, which are the 2D analogs of conventional 3D Si/Ge superlattices and quantum wells. In spite of the considerable lattice mismatch (˜4 % ) between free-standing silicene and germanene, our ab initio simulations predict that, considering striped 2D lateral heterostructures made by alternating silicene and germanene ribbons of constant width, the silicene/germanene junction remains pseudomorphic—i.e., it maintains lattice-matched edges—up to critical ribbon widths that can reach some tens of nanometers. Such critical widths are one order of magnitude larger than the critical thickness measured in 3D pseudomorphic Si/Ge heterostructures and the resolution of state-of-the-art lithography, thus enabling the possibility of lithography patterned silicene/germanene junctions. We computed how the strain produced by the pseudomorphic growth modifies the crystal structure and electronic bands of the ribbons, providing a mechanism for band-structure engineering. Our results pave the way for lithography patterned lateral heterostructures that can serve as the building blocks of novel 2D electronics.

  8. Ab initio study of II-(VI)2 dichalcogenides.

    PubMed

    Olsson, P; Vidal, J; Lincot, D

    2011-10-12

    The structural stabilities of the (Zn,Cd)(S,Se,Te)(2) dichalcogenides have been determined ab initio. These compounds are shown to be stable in the pyrite phase, in agreement with available experiments. Structural parameters for the ZnTe(2) pyrite semiconductor compound proposed here are presented. The opto-electronic properties of these dichalcogenide compounds have been calculated using quasiparticle GW theory. Bandgaps, band structures and effective masses are proposed as well as absorption coefficients and refraction indices. The compounds are all indirect semiconductors with very flat conduction band dispersion and high absorption coefficients. The work functions and surface properties are predicted. The Te and Se based compounds could be of interest as absorber materials in photovoltaic applications. PMID:21937783

  9. II-VI Semiconductor microstructures:from physics to optoelectronics

    NASA Astrophysics Data System (ADS)

    Pautrat, J. L.

    1994-12-01

    The tellurium compounds family displays many interesting features. The various compounds cover a very large range of bandgap energies from 0 (Cd{0.15}Hg0.85Te) to more than 3 eV (ZnTe : 2.4 eV ; MnTe : 3.2 eV ; MgTe : 3.5 eV). The lattice parameters of the various compounds are sometimes almost perfectly matched, as in the CdTe/CdxHg{1-x}Te case, or slightly enough mismatched for a coherent epitaxy to be performed. Furthermore, good quality Cd{0.96}Zn{0.04}Te substrates are now available which allow to grow a large variety of microstructures using molecular beam epitaxy. The thickness control of the deposited layers allows to design and grow sophisticated beterostructures incorporating monolayer thick features. The direct band gap of these materials makes them well-suited to many optoelectronic applications in the infrared and visible range. A few examples of applications are described in more details : i) microtip semiconductor laser based on a cold microtip electron emitter for cathodic pumping of a CdTe/CdMnTe laser cavity ; ii) multiquantum well structures showing a marked excitonic absorption band at room temperature and the disappearance of this band when an electric field is applied to the structure. Application to self electrooptic and photorefractive devices ; iii) Bragg mirrors for the infrared. In addition to the usual semiconductor properties, the manganese compounds display interesting properties which can be useful in the field of magnetooptics.

  10. Diluted II-VI oxide semiconductors with multiple band gaps.

    PubMed

    Yu, K M; Walukiewicz, W; Wu, J; Shan, W; Beeman, J W; Scarpulla, M A; Dubon, O D; Becla, P

    2003-12-12

    We report the realization of a new mult-band-gap semiconductor. Zn(1-y)Mn(y)OxTe1-x alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn(1-y)Mn(y)Te host. When only 1.3% of Te atoms are replaced with oxygen in a Zn0.88Mn0.12Te crystal the resulting band structure consists of two direct band gaps with interband transitions at approximately 1.77 and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model. With multiple band gaps that fall within the solar energy spectrum, Zn(1-y)Mn(y)OxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%. PMID:14683137

  11. Multiple junction II-VI compound photoelectrochemical cells

    NASA Astrophysics Data System (ADS)

    Russak, Michael A.

    1986-12-01

    The application of concepts used in producing tandem solid state photovoltaic devices to photoelectrochemical cells has resulted in improved spectral response and photovoltaic output. As in solid state devices, the key to achieving good photovoltaic performance is optimization of the semiconductor properties in each part of the tandem arrangement. This has been done for the thin film CdS/CdSe/sulfide-polysulfide system with an improvement of over 15 percent in conversion efficiency being obtained. Preliminary results showing significant current enhancement by the addition of a CdSe backwall electrode to the CdTe/selenide-polyselenide system are also reported.

  12. Theory of exciton linewidth in II VI semiconductor mixed crystals

    NASA Astrophysics Data System (ADS)

    Zimmermann, R.

    1990-04-01

    The disorder-induced broadening of excitons in mixed crystals is discussed, using a novel expression for the relevant exciton volume. Earlier experimental data on CdS 1-xSe x are successfully explained. The exciton broadening in quantum wells due to well-width fluctuations is obtained along similar lines.

  13. Analyses of compensation related defects in II-VI compounds

    SciTech Connect

    Castaldini, A.; Cavallini, A.; Fraboni, B.; Fernandez, P.; Piqueras, J.

    1998-12-31

    The deep levels present in semiconducting CdTe and semi-insulating (SI) CdTe:Cl and Cd{sub 0.8}Zn{sub 0.2}Te have been investigated by means of cathodoluminescence (CL), deep level transient spectroscopy (DLTS), photo-DLTS (PDLTS) and photo induced current transient spectroscopy (PICTS). PICTS and PDLTS can be applied to SI materials and allowed to determine whether the observed deep levels are hole or electron traps. Among the observed deep centers, the authors have focused their attention on those involved in the compensation process such as the so called center A and the deep traps located near midgap. They have identified a deep acceptor, labelled H, and a deep donor, labelled E, the latter is peculiar to CdTe:Cl and can be a good candidate for the deep donor level needed to explain the compensation process in SI CdTe:Cl.

  14. Modeling of mechanical properties of II-VI materials

    NASA Technical Reports Server (NTRS)

    Sher, A.; Berding, M. A.; Van Schilfgaarde, M.; Chen, A.-B.; Patrick, R.

    1988-01-01

    This paper reviews some new developments in the theory of alloy correlations, order-disorder transitions, and solidus phase-transition curves. It is argued that semiconductor alloys are never truly random, and the various phenomena that drive deviations from random arrangements are introduced. Likely consequences of correlations on the ability to fine-tune the lattice match of epitaxial layers to substrates, on vacancy formation, on diffusion, and on vapor-phase crystal growth are discussed. Examples are chosen for the alloys Hg(1-x)Cd(x)Te, Hg(1-x)Zn(x)Te, Cd(1-y)Zn(y)Te, and CdSe(1-y)Te(y).

  15. Magnetoelectric Coupling in Composite Multiferroic Heterostructures

    NASA Astrophysics Data System (ADS)

    Hoffman, Jason

    In this work, we demonstrate a large charge-mediated magnetoelectric coupling in a PbZr0.2Ti0.8O3 / La0.8 Sr0.2MnO3 (PZT/LSMO) composite structure resulting from direct control of magnetism via charge carrier density. This approach has the advantage that its physical mechanism is transparent and the size of the effect can be quantified and understood qualitatively within the double-exchange model. Direct quantification of the charge-driven magnetic changes based on electronic, magnetic, and spectroscopic measurements show that both the spin state and spin configuration of LSMO are modulated. Using a combination of advanced physical vapor deposition techniques, we have grown epitaxial PZT/LSMO bilayer heterostructures on (001) SrTiO 3 substrates with excellent crystallinity, atomically smooth surfaces, low leakage current density, and abrupt interfaces. Magneto-optic Kerr effect (MOKE) magnetometry was used to directly interrogate the local magnetic state of the LSMO as a function of the PZT polarization state. We show direct control of magnetism via applied electric fields, including modulation of the magnetotransport behavior and magnetic-ordering temperature, on/off switching of magnetism, and hysteretic magnetization versus electric field (M-E) characteristics. The magnetoelectric coupling strength, which relates the change in magnetization to the applied electric field, is found to vary strongly with temperature, reaching a low temperature saturation value of +6 Oe cm / kV, much larger than observed in single-phase magnetoelectrics and too large to be explained by a simple band-filling model. To clarify the origin of the magnetoelectric coupling, we carried out near edge x-ray absorption measurements that revealed a well defined change in the position of the Mn absorption edge with the ferroelectric polarization, giving a direct measure of the change in Mn valency in LSMO. We explain these results in terms of an interfacial magnetic reconstruction, whereby the

  16. Photodetectors based on heterostructures for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Nabet, Bahram; Cola, Adriano; Cataldo, Andrea; Chen, Xiying; Quaranta, Fabio

    2002-09-01

    In this work we describe a family of optical devices based on heterojunction and heterodimensional structures and we investigate their static and dynamic properties. Such devices are good candidates, due to their high performance, for utilization as the sensing element for the realization of sensors in the fields of telecommunications, remote sensing, LIDAR and medical imaging. First, we present a Heterostructure Metal-Semiconductor-Metal (HMSM) photodetectors that employ a uniformly doped GaAs/AlGaAs heterojunction for the dual purpose of barrier height enhancement and creating an internal electric field that aids in the transport and collection of the photogenerated electrons. In this first family of devices, two doping levels are compared showing the direct effect of the aiding field due to modulation doping. Subsequently, we analyze a novel Resonant-Cavity-Enhanced (RCE) HMSM photodetector in which a Distributed Bragg Reflector (DBR) is employed in order to reduce the thickness of the absorption layer thus achieving good responsivity and high speed as well as wavelength selectivity. Current-voltage, current-temperature, photocurrent spectra, high-speed time response, and on-wafer frequency domain measurements point out the better performance of this last family of detectors, as they can operate in tens of Giga-Hertz range with low dark current and high responsivity. Particularly, the I-V curves show a very low dark current (around 10 picoamps at operative biases); C-V measurements highlight the low geometrical capacitance values; the photocurrent spectrum shows a clear peak at 850 nm wavelength, while time response measurements give a 3 dB bandwidth of about 30 GHz. Small signal model based on frequency domain data is also extracted in order to facilitate future photoreceiver design. Furthermore, two-dimensional numerical simulations have been carried out in order to predict the electrical properties of these detectors. Combination of very low dark current and

  17. Thermoelectric properties of IV–VI-based heterostructures and superlattices

    SciTech Connect

    Borges, P.D.; Petersen, J.E.; Scolfaro, L.; Leite Alves, H.W.; Myers, T.H.

    2015-07-15

    Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV

  18. Nano-scale polar-nonpolar oxide heterostructures for photocatalysis

    NASA Astrophysics Data System (ADS)

    Guo, Hongli; Saidi, Wissam A.; Yang, Jinlong; Zhao, Jin

    2016-03-01

    We proposed based on first principles density functional theory calculations that a nano-scale thin film based on a polar-nonpolar transition-metal oxide heterostructure can be used as a highly-efficient photocatalyst. This is demonstrated using a SrTiO3/LaAlO3/SrTiO3 sandwich-like heterostructure with photocatalytic activity in the near-infrared region. The effect of the polar nature of LaAlO3 is two-fold. First, the induced electrostatic field accelerates the photo-generated electrons and holes into opposite directions and minimizes their recombination rates. Hence, the reduction and oxidation reactions can be instigated at the SrTiO3 surfaces located on the opposite sides of the heterostructure. Second, the electric field reduces the band gap of the system making it photoactive in the infrared region. We also show that charge separation can be enhanced by using compressive strain engineering that creates ferroelectric instability in STO. The proposed setup is ideal for tandem oxide photocatalysts especially when combined with photoactive polar materials.We proposed based on first principles density functional theory calculations that a nano-scale thin film based on a polar-nonpolar transition-metal oxide heterostructure can be used as a highly-efficient photocatalyst. This is demonstrated using a SrTiO3/LaAlO3/SrTiO3 sandwich-like heterostructure with photocatalytic activity in the near-infrared region. The effect of the polar nature of LaAlO3 is two-fold. First, the induced electrostatic field accelerates the photo-generated electrons and holes into opposite directions and minimizes their recombination rates. Hence, the reduction and oxidation reactions can be instigated at the SrTiO3 surfaces located on the opposite sides of the heterostructure. Second, the electric field reduces the band gap of the system making it photoactive in the infrared region. We also show that charge separation can be enhanced by using compressive strain engineering that creates

  19. Photoelectric properties of film heterostructures based on poly-N-Epoxypropylcarbazole and merocyanine dye

    NASA Astrophysics Data System (ADS)

    Davidenko, N. A.; Ishchenko, A. A.; Korotchenkov, O. A.; Mokrinskaya, E. V.; Podolian, A. O.; Studzinsky, S. L.; Tonkopieva, L. S.

    2012-10-01

    Heterostructures comprising a merocyanine dye (M1) film deposited onto a poly-N-epoxypropylcarbazole (PEPC) film have been created, and their photoconducting, photodielectric, and photovoltaic properties have been studied. The PEPC/M1 heterostructures exhibit the photodiode and photoelectric converter properties. It is concluded that the p- n junction in these heterostructures is ensured by the hole character of conductivity in the polymer and the bipolar conductivity of the deposited dye film.

  20. Thermal and Electrical Transport in Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Ravichandran, Jayakanth

    This dissertation presents a study of thermal and electrical transport phenomena in heterostructures of transition metal oxides, with specific interest in understanding and tailoring thermoelectricity in these systems. Thermoelectric energy conversion is a promising method for waste heat recovery and the efficiency of such an engine is directly related to a material dependent figure of merit, Z, given as S2sigma/kappa, where S is thermopower and sigma and kappa are electrical and thermal conductivity respectively. Achieving large figure of merit has been hampered by the coupling between these three thermoelectric coefficients, and the primary aim of this study is to understand the nature of thermoelectricity in complex oxides and identify mechanisms which can allow tuning of one or more thermoelectric coefficients in a favorable manner. Unlike the heavily studied conventional thermoelectric semiconductors, transition metals based complex oxides show conduction band characteristics dominated by d-bands, with much larger effective masses and varying degrees of electron correlations. These systems provide for exotic thermoelectric effects which are typically not explained by conventional theories and hence provide an ideal platform for exploring the limits of thermoelectricity. Meanwhile, oxides are composed of earth abundant elements and have excellent high temperature stability, thus providing compelling technological possibilities for thermoelectrics based power generation. In this dissertation, we address specific aspects of thermoelectricity in model complex oxide systems such as perovskite titanates and layered cobaltates to understand thermal and thermoelectric behavior and explore the tunability of thermoelectricity in these systems. The demonstration of band engineering as a viable method to tune physical properties of materials is explored. The model system used for this case is strontium titanate, where two dopants such as La on the Sr-site and oxygen

  1. Synthesis and applications of heterostructured semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Khon, Elena

    Semiconductor nanocrystals (NCs) have been of great interest to researchers for several decades due to their unique optoelectronic properties. These nanoparticles are widely used for a variety of different applications. However, there are many unresolved issues that lower the efficiency and/or stability of devices which incorporate these NCs. Our research is dedicated to addressing these issues by identifying potential problems and resolving them, improving existing systems, generating new synthetic strategies, and/or building new devices. The general strategies for the synthesis of different nanocrystals were established in this work, one of which is the colloidal growth of gold domains onto CdS semiconductor nanocrystals. Control of shape and size was achieved simply by adjusting the temperature and the time of the reaction. Depending on the exact morphology of Au and CdS domains, fabricated nano-composites can undergo evaporation-induced self-assembly onto a substrate, which is very useful for building devices. CdS/Au heterostructures can assemble in two different ways: through end-to-end coupling of Au domains, resulting in the formation of one-dimensional chains; and via side-by-side packing of CdS nanorods, leading to the onset of two-dimensional superlattices. We investigated the nature of exciton-plasmon interactions in Au-tipped CdS nanorods using femtosecond transient absorption spectroscopy. The study demonstrated that the key optoelectronic properties of electrically coupled metal and semiconductor domains are significantly different from those observed in systems with weak inter-domain coupling. In particular, strongly-coupled nanocomposites promote mixing of electronic states at semiconductor-metal domain interfaces, which causes a significant suppression of both plasmon and exciton carrier excitations. Colloidal QDs are starting to replace organic molecules in many different applications, such as organic light emmiting diods (OLEDs), due to their

  2. Vertical Field-Effect Transistor Based on Graphene-Transition Metal Dichalcogenides Heterostructures

    NASA Astrophysics Data System (ADS)

    Kumar, Jatinder; Chien, Hui-Chun; Bellus, Matthew Z.; Sicilian, David L.; Aubin, Davis St.; Chiu, Hsin-Ying; Physics and Astronomy, University of Kansas Team

    2014-03-01

    The remarkable properties of graphene has made it possible to create transistors just few atoms thick. A new development was that the other two-dimensional materials can be stacked on it with atomic layer precision, creating numerous heterostructures on demand. Here, novel vertical field-effect transistor composed of graphene- transition metal dichalcogenides (TMDs) heterostructures is fabricated and characterized at various temperatures. Due to ultrathin nature of these transistors, they present the ultimate limit for electron transport in heterostructures. Tunneling and thermionic transport characteristics are studied among different graphene-TMDs heterostructures. Their electronic properties have been investigated and can be used in vast range of devices.

  3. System-size dependent band alignment in lateral two-dimensional heterostructures

    NASA Astrophysics Data System (ADS)

    Leenaerts, O.; Vercauteren, S.; Schoeters, B.; Partoens, B.

    2016-06-01

    The electronic band alignment in semiconductor heterostructures is a key factor for their use in electronic applications. The alignment problem has been intensively studied for bulk systems but is less well understood for low-dimensional heterostructures. In this work we investigate the alignment in two-dimensional lateral heterostructures. First-principles calculations are used to show that the electronic band offset depends crucially on the width and thickness of the heterostructure slab. The particular heterostructures under study consist of thin hydrogenated and fluorinated diamond slabs which are laterally joined together. Two different limits for the band offset are observed. For infinitely wide heterostructures the vacuum potential above the two materials is aligned leading to a large step potential within the heterostructure. For infinitely thick heterostructure slabs, on the other hand, there is no potential step in the heterostructure bulk, but a large potential step in the vacuum region above the heterojunction is observed. The band alignment in finite systems depends on the particular dimensions of the system. These observations are shown to result from an interface dipole at the heterojunction that tends to align the band structures.

  4. Effect of scattering by native defects on electron mobility in modulation-doped heterostructures

    SciTech Connect

    Walukiewicz, W.; Haller, E.E. )

    1991-04-15

    The effect of scattering by native defects on carrier mobility in modulation-doped heterostructures is calculated. The concentration of the defects is determined using the amphoteric native defect model. It is shown that the Fermi level induced reduction of the defect formation energy leads to an increased incorporation of native defects and reduced mobility in AlGaAs/GaAs inverted modulation-doped heterostructures. This new mechanism explains the experimentally observed difference in the values of electron mobilities in normal and inverted modulation-doped heterostructures. The effects of native defects on the carrier mobilities in heterostructures based on other semiconductor systems are also discussed.

  5. Charge transfer and emergent phenomena of oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Chen, Hanghui

    Charge transfer is a common phenomenon at oxide interfaces. We use first-principles calculations to show that via heterostructuring of transition metal oxides, the electronegativity difference between two dissimilar transition metal ions can lead to high level of charge transfer and induce substantial redistribution of electrons and ions. Notable examples include i) enhancing correlation effects and inducing a metal-insulator transition; ii) tailoring magnetic structures and inducing interfacial ferromagnetism; iii) engineering orbital splitting and inducing a non-cuprate single-orbital Fermi surface. Utilizing charge transfer to induce emergent electronic/magnetic/orbital properties at oxide interfaces is a robust approach. Combining charge transfer with quantum confinement and expitaxial strain provides an appealing prospect of engineering electronic structure of artificial oxide heterostructures. This research was supported by National Science Foundation under Grant No. DMR-1120296.

  6. Novel heterostructured Ge nanowires based on polytype transformation.

    PubMed

    Vincent, Laetitia; Patriarche, Gilles; Hallais, Géraldine; Renard, Charles; Gardès, Cyrille; Troadec, David; Bouchier, Daniel

    2014-08-13

    We report on a strain-induced phase transformation in Ge nanowires under external shear stresses. The resulted polytype heterostructure may have great potential for photonics and thermoelectric applications. ⟨111⟩-oriented Ge nanowires with standard diamond structure (3C) undergo a phase transformation toward the hexagonal diamond phase referred as the 2H-allotrope. The phase transformation occurs heterogeneously on shear bands along the length of the nanowire. The structure meets the common phenomenological criteria of a martensitic phase transformation. This point is discussed to initiate an on going debate on the transformation mechanisms. The process results in unprecedented quasiperiodic heterostructures 3C/2H along the Ge nanowire. The thermal stability of those 2H domains is also studied under annealing up to 650 °C by in situ TEM. PMID:24988041

  7. Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

    NASA Technical Reports Server (NTRS)

    Pavlidis, Dimitris

    1991-01-01

    The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

  8. Tightly Bound Trions in Transition Metal Dichalcogenide Heterostructures.

    PubMed

    Bellus, Matthew Z; Ceballos, Frank; Chiu, Hsin-Ying; Zhao, Hui

    2015-06-23

    We report the observation of trions at room temperature in a van der Waals heterostructure composed of MoSe2 and WS2 monolayers. These trions are formed by excitons excited in the WS2 layer and electrons transferred from the MoSe2 layer. Recombination of trions results in a peak in the photoluminescence spectra, which is absent in monolayer WS2 that is not in contact with MoSe2. The trion origin of this peak is further confirmed by the linear dependence of the peak position on excitation intensity. We deduced a zero-density trion binding energy of 62 meV. The trion formation facilitates electrical control of exciton transport in transition metal dichalcogenide heterostructures, which can be utilized in various optoelectronic applications. PMID:26046238

  9. Photoresponsive memory device based on Graphene/Boron Nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Kahn, Salman; Velasco, Jairo, Jr.; Ju, Long; Wong, Dillon; Lee, Juwon; Tsai, Hsin Zon; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael

    2015-03-01

    Recent technological advancements have allowed the stacking of two dimensional layered material in order to create van der Waals heterostructures (VDH), enabling the design of novel properties by exploiting the proximal interaction between layers with different electronic properties. We report the creation of an optoelectronic memory device using a Graphene/Boron Nitride (hBN) heterostructure. Using the photo-induced doping phenomenon, we are able to spatially ``write'' a doping profile on graphene and ``read'' the profile through electrical transport and local probe techniques. We then utilize defect engineering to enhance the optoelectronic response of graphene and explore the effect of defects in hBN. Our work introduces a simple device architecture to create an optoelectronic memory device and contributes towards understanding the proximal effects of hBN on Graphene.

  10. Characteristics of Sn segregation in Ge/GeSn heterostructures

    NASA Astrophysics Data System (ADS)

    Li, H.; Chang, C.; Chen, T. P.; Cheng, H. H.; Shi, Z. W.; Chen, H.

    2014-10-01

    We report an investigation of Sn segregation in Ge/GeSn heterostructures occurred during the growth by molecular beam epitaxy. The measured Sn profile in the Ge layer shows that: (a) the Sn concentration decreases rapidly near the Ge/GeSn interface, and (b) when moving away from the interface, the Sn concentration reduced with a much slower rate. The 1/e decay lengths of the present system are much longer than those of the conventional group IV system of Ge segregation in the Si overlayer because of the smaller kinetic potential as modeled by a self-limited two-state exchange scheme. The demonstration of the Sn segregation shows the material characteristics of the heterostructure, which are needed for the investigation of its optical properties.

  11. Axial Ge/Si nanowire heterostructure tunnel FETs

    SciTech Connect

    Picraux, Sanuel T; Daych, Shadi A

    2010-01-01

    The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

  12. An envelope function formalism for lattice-matched heterostructures

    NASA Astrophysics Data System (ADS)

    Van de Put, Maarten L.; Vandenberghe, William G.; Magnus, Wim; Sorée, Bart

    2015-08-01

    The envelope function method traditionally employs a single basis set which, in practice, relates to a single material because the k · p matrix elements are generally only known in a particular basis. In this work, we defined a basis function transformation to alleviate this restriction. The transformation is completely described by the known inter-band momentum matrix elements. The resulting envelope function equation can solve the electronic structure in lattice matched heterostructures without resorting to boundary conditions at the interface between materials, while all unit-cell averaged observables can be calculated as with the standard envelope function formalism. In the case of two coupled bands, this heterostructure formalism is equivalent to the standard formalism while taking position dependent matrix elements.

  13. ``Excess'' polarization of the spontaneous emission in laser heterostructures

    NASA Astrophysics Data System (ADS)

    Ptashchenko, A. A.; Ptashchenko, F. A.

    1996-10-01

    "Excess" polarization of the spontaneous emission (EPSE) of diode lasers at low injection levels, being more pronounced in degraded specimens, has been observed. A model of EPSE is proposed, involving tunnel radiative recombination of electrons and light holes at inhomogeneities of the p- n junction. Separating EPSE from the polarization effect caused by elastic deformation enables the strain in the active region of laser heterostructures to be determined.

  14. Method for forming monolayer graphene-boron nitride heterostructures

    DOEpatents

    Sutter, Peter Werner; Sutter, Eli Anguelova

    2016-08-09

    A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.

  15. Nonadiabatic chemoelectron energy conversion in heterostructures for hydrogen power engineering

    NASA Astrophysics Data System (ADS)

    Grankin, V. P.; Grankin, D. V.

    2015-12-01

    A relationship describing the probability of electron excitation in a solid crystal by the energy of a chemical reaction on its surface has been found. It is established that the probability of electron excitation in this reaction exponentially increases with decreasing energy of electron transition in the solid. A method of nonadiabatic chemoelectron energy conversion in heterostructures for hydrogen power engineering based on Schottky diodes is proposed and the efficiency of this method is calculated.

  16. Topological properties and correlation effects in oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Okamoto, Satoshi

    2015-03-01

    Transition-metal oxides (TMOs) have long been one of the main subjects of material science because of their novel functionalities such as high-Tc superconductivity in cuprates and the colossal magnetoresistance effect in manganites. In recent years, we have seen tremendous developments in thin film growth techniques with the atomic precision, resulting in the discovery of a variety of electronic states in TMO heterostructures. These developments motivate us to explore the possibility of novel quantum states of matter such as topological insulators (TIs) in TMO heterostructures. In this talk, I will present our systematic theoretical study on unprecedented electronic states in TMO heterostructures. An extremely simple but crucial observation is that, when grown along the [111] crystallographic axis, bilayers of perovskite TMOs form buckled honeycomb lattices of transition-metal ions, similar to graphene. Thus, with the relativistic spin-orbit coupling and proper band filling, two-dimensional TI states or spin Hall insulators are anticipated. Based on tight-binding modeling and density-functional theory calculations, possible candidate materials for TIs are identified. By means of the dynamical-mean-field theory and a slave-boson mean field theory, correlation effects, characteristics of TMOs, are also examined. I will further discuss future prospects in topological phenomena in TMO heterostructures and related systems. The author thanks D. Xiao, W. Zhu, Y. Ran, R. Arita, Y. Nomura and N. Nagaosa for their fruitful discussions and collaboration. This work is supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

  17. Gating of high-mobility InAs metamorphic heterostructures

    SciTech Connect

    Shabani, J.; McFadden, A. P.; Shojaei, B.; Palmstrøm, C. J.

    2014-12-29

    We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In{sub 0.75}Ga{sub 0.25}As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find that by using In{sub 0.75}Al{sub 0.25}As as the barrier without an In{sub 0.75}Ga{sub 0.25}As capping, a drastic reduction in parallel conduction can be achieved. Our studies show that this does not change the transport properties of the quantum well significantly. We achieved full depletion in InAlAs capped heterostructures with non-hysteretic gating response suitable for fabrication of gate-defined mesoscopic devices.

  18. Mixed multilayered vertical heterostructures utilizing strained monolayer WS2.

    PubMed

    Sheng, Yuewen; Xu, Wenshuo; Wang, Xiaochen; He, Zhengyu; Rong, Youmin; Warner, Jamie H

    2016-02-01

    Creating alternating layers of 2D materials forms vertical heterostructures with diverse electronic and opto-electronic properties. Monolayer WS2 grown by chemical vapour deposition can have inherent strain due to interactions with the substrate. The strain modifies the band structure and properties of monolayer WS2 and can be exploited in a wide range of applications. We demonstrate a non-aqueous transfer method for creating vertical stacks of mixed 2D layers containing a strained monolayer of WS2, with Boron Nitride and Graphene. The 2D materials are all grown by CVD, enabling large area vertical heterostructures to be formed. WS2 monolayers grown by CVD directly on Si substrates with SiO2 surface are easily washed off by water and this makes aqueous based transfer methods challenging for creating vertical stacks on the growth substrate. 2D hexagonal Boron Nitride films are used to provide an insulating layer that limits interactions with a top graphene layer and preserve the strong photoluminescence from the WS2. This transfer method is suitable for layer by layer control of 2D material vertical stacks and is shown to be possible for all CVD grown samples, which opens up pathways for the rapid large scale fabrication of vertical heterostructure systems with atomic thickness depth control and large area coverage. PMID:26758782

  19. Ultrafast Band Structure Control of a Two-Dimensional Heterostructure.

    PubMed

    Ulstrup, Søren; Čabo, Antonija Grubišić; Miwa, Jill A; Riley, Jonathon M; Grønborg, Signe S; Johannsen, Jens C; Cacho, Cephise; Alexander, Oliver; Chapman, Richard T; Springate, Emma; Bianchi, Marco; Dendzik, Maciej; Lauritsen, Jeppe V; King, Phil D C; Hofmann, Philip

    2016-06-28

    The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and interlayer interactions. Here, using time- and angle-resolved photoemission, we are able to isolate both the layer-resolved band structure and, more importantly, the transient band structure evolution of a model 2D heterostructure formed of a single layer of MoS2 on graphene. Our results reveal a pronounced renormalization of the quasiparticle gap of the MoS2 layer. Following optical excitation, the band gap is reduced by up to ∼400 meV on femtosecond time scales due to a persistence of strong electronic interactions despite the environmental screening by the n-doped graphene. This points to a large degree of tunability of both the electronic structure and the electron dynamics for 2D semiconductors embedded in a van der Waals-bonded heterostructure. PMID:27267820

  20. Growth and Characterization of Graphene-Boron Nitride Heterostructures

    NASA Astrophysics Data System (ADS)

    Sutter, Peter

    2012-02-01

    Graphene has been used to explore the fascinating properties of two-dimensional sp^2 carbon, and shows great promise for applications. Heterostructures of graphene (G) and hexagonal boron nitride (h-BN) have the potential for extended functionality, e.g., providing high carrier mobilities in graphene devices supported on h-BN and giving rise to emergent electronic behavior near in-plane G/h-BN junctions. While significant progress has been made recently in separate graphene and boron nitride growth on transition metals, the controlled synthesis of high-quality G/h-BN heterostructures poses new challenges. We discuss the fundamental growth mechanisms underlying the synthesis of G/h-BN heterostructures, studied by a combination of in-situ surface microscopy methods. Real-time low-energy electron microscopy (LEEM) provides a mesoscale view of the nucleation and growth of h-BN in the presence of graphene, and vice-versa. LEEM imaging together with diffraction and angle resolved photoemission spectroscopy (micro-ARPES) gives insight into the interaction between graphene and h-BN. Scanning tunneling microscopy has been used to probe intermixing and the atomic-scale structure of interfacial boundaries. Combining real-time and atomic-resolution imaging, we identify successful approaches for achieving atomically sharp G/h-BN junctions.

  1. Magnetization Dynamics of Organic-based Magnetic Heterostructures

    NASA Astrophysics Data System (ADS)

    Chilcote, Michael; Lu, Yu; Wang, Hailong; Yang, Fengyuan; Johnston-Halperin, Ezekiel

    We present temperature dependent ferromagnetic resonance measurements of both isolated magnetic films and bilayers, including all organic and organic/inorganic hybrid magnetic heterostructures. These results establish organic magnetic heterostructures as an exciting new materials platform for the exploration of the fundamental mechanisms driving magnetic ordering in organic-based materials and promise the extension of organic spintronics into the regime of dynamically-driven spin currents, such as those found in spin pumping. The low cost, low-temperature conformal deposition of organic-based thin film magnets makes them an attractive class of materials for device applications. For example, they offer the potential for novel applications in high frequency magnetoelectronics on flexible substrates. Our materials are of the form M[Acceptor]x (M = transition metal, x ~ 2), exhibit room temperature magnetic ordering, and provide the opportunity to tailor magnetic properties through the selection of the transition metal ions and organic ligands. In particular, we focus on ferrimagnetic films and heterostructures where M = vanadium and the organic ligands are tetracyanoethylene (TCNE), ethyl tricyanoethylene carboxylate (ETCEC), and methyl tricyanoethylene carboxylate (MeTCEC).

  2. Axial Ge/Si nanowire heterostructure tunnel FETs.

    SciTech Connect

    Dayeh, Shadi A.; Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  3. Spatially Correlated Disorder in Epitaxial van der Waals Heterostructures

    NASA Astrophysics Data System (ADS)

    Laanait, Nouamane; Zhang, Zhan; Schleputz, Christian; Liu, Ying; Wojcik, Michael; Myers-Ward, Rachael; Gaskill, D. Kurt; Fenter, Paul; Li, Lian

    The structural cohesion of van der Waals (vdW) heterostructures relies upon a cooperative balance between strong intra-layer bonded interactions and weak inter-layer coupling. The confinement of extended defects to within a single vdW layer and competing interactions introduced by epitaxial constraints could generate fundamentally new structural disorders. Here we report on the presence of spatially correlated and localized disorder states that coexist with the near perfect crystallographic order along the growth direction of epitaxial vdW heterostructure of Bi2Se3/graphene/SiC grown by molecular beam epitaxy. With the depth penetration of hard X-ray diffraction microscopy and high-resolution surface scattering, we imaged local structural configurations from the atomic to mesoscopic length scales, and found that these disorder states result as a confluence of atomic scale modulations in the strength of vdW layer-layer interactions and nanoscale boundary conditions imposed by the substrate. These findings reveal a vast landscape of novel disorder states that can be manifested in epitaxial vdW heterostructures. Supported by the Wigner Fellowship program at Oak Ridge Nat'l Lab.

  4. Quantum Tunneling Sb-Heterostructures for Millimeter Wave Radiometry

    NASA Astrophysics Data System (ADS)

    Schulman, Joel N.

    2003-03-01

    Imaging in the millimeter wavelength range has been making rapid progress as high speed electronics increase in frequency. Applications include viewing through adverse visibility conditions (fog, smoke, dust, precipitation) and also the relative transparency of clothing (concealed-weapons-detection) and some building materials (through-the-wall-detection). Atmospheric radiometry (climate assessment and weather prediction) already depend heavily on this wavelength range. Astronomical applications include incorporation in instruments for cosmic microwave background detection. An important ingredient is a diode that "rectifies" in a special way. It must convert input power, i.e., voltage squared, into a DC voltage output -- a "square-law" detector. We have recently found that quantum tunneling through an InAs/AlSb/GaAlSb heterostructure system provides the ideal physical mechanism for this purpose.1,2 We will present our results to date, demonstrating how a close coupling of semiconductor quantum tunneling theory with electrical engineering know-how have brought an "exotic" quantum phenomon to practical and economic application. 1. "Sb-heterostructure interband backward diodes" J.N. Schulman and D.H. Chow. IEEE Electron Device Letters 21, 353-355 (2000). 2. "High-Performance Antimonide-Based Heterostructure Backward Diodes for Millimeter-wave Detection" P. Fay, J. N. Schulman, S. Thomas III, D. H. Chow, Y. K. Boegeman, and K. S. Holabird, IEEE Electron Device Letters 23, 585-587 (2002).

  5. Structural and Electrical Investigation of C60-Graphene Vertical Heterostructures.

    PubMed

    Kim, Kwanpyo; Lee, Tae Hoon; Santos, Elton J G; Jo, Pil Sung; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

    2015-06-23

    Graphene, with its unique electronic and structural qualities, has become an important playground for studying adsorption and assembly of various materials including organic molecules. Moreover, organic/graphene vertical structures assembled by van der Waals interaction have potential for multifunctional device applications. Here, we investigate structural and electrical properties of vertical heterostructures composed of C60 thin film on graphene. The assembled film structure of C60 on graphene is investigated using transmission electron microscopy, which reveals a uniform morphology of C60 film on graphene with a grain size as large as 500 nm. The strong epitaxial relations between C60 crystal and graphene lattice directions are found, and van der Waals ab initio calculations support the observed phenomena. Moreover, using C60-graphene heterostructures, we fabricate vertical graphene transistors incorporating n-type organic semiconducting materials with an on/off ratio above 3 × 10(3). Our work demonstrates that graphene can serve as an excellent substrate for assembly of molecules, and attained organic/graphene heterostructures have great potential for electronics applications. PMID:26027690

  6. Heterostructure of ferromagnetic and ferroelectric materials with magneto-optic and electro-optic effects

    NASA Technical Reports Server (NTRS)

    Zou, Yingyin Kevin (Inventor); Jiang, Hua (Inventor); Li, Kewen Kevin (Inventor); Guo, Xiaomei (Inventor)

    2012-01-01

    A heterostructure of multiferroics or magnetoelectrics (ME) was disclosed. The film has both ferromagnetic and ferroelectric properties, as well as magneto-optic (MO) and electro-optic (EO) properties. Oxide buffer layers were employed to allow grown a cracking-free heterostructure a solution coating method.

  7. In situ growth of matchlike ZnO/Au plasmonic heterostructure for enhanced photoelectrochemical water splitting.

    PubMed

    Wu, Mi; Chen, Wei-Jian; Shen, Yu-Hua; Huang, Fang-Zhi; Li, Chuan-Hao; Li, Shi-Kuo

    2014-09-10

    In this paper, we report a novel matchlike zinc oxide (ZnO)/gold (Au) heterostructure with plasmonic-enhanced photoelectrochemical (PEC) activity for solar hydrogen production. The matchlike heterostructure with Au nanoparticles coated on the tip of ZnO nanorods is in situ grown on a zinc (Zn) substrate by using a facile hydrothermal and photoreduction combined approach. This unique heterostructure exhibits plasmonic-enhanced light absorption, efficient charge separation and transportation properties with tunable Au contents. The photocurrent density of the matchlike ZnO/Au heterostructure reaches 9.11 mA/cm(2) at an applied potential of 1.0 V (vs Ag/AgCl) with an Au/Zn atomic ratio of 0.039, which is much higher than that of the pristine ZnO nanorod array (0.33 mA/cm(2)). Moreover, the solar-to-hydrogen conversion efficiency of this special heterostructure can reach 0.48%, 16 times higher than that of the pristine ZnO nanorod array (0.03%). What is more, the efficiency could be further improved by optimizing the Au content of the heterostructure. The formation mechanism of such a unique heterostructure is proposed to explain the plasmonic-enhanced PEC performance. This study might contribute to the rational design of the visible-light-responsive plasmonic semiconductor/metal heterostructure photoanode to harvest the solar spectrum. PMID:25144940

  8. Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures.

    PubMed

    Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

    2016-01-01

    Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a 'giant' resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields. PMID:27126101

  9. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures

    PubMed Central

    Wang, Han; Bang, Junhyeok; Sun, Yiyang; Liang, Liangbo; West, Damien; Meunier, Vincent; Zhang, Shengbai

    2016-01-01

    The success of van der Waals heterostructures made of graphene, metal dichalcogenides and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that van der Waals heterostructues can exhibit ultrafast charge transfer despite the weak binding of these heterostructures. Here we find, using time-dependent density functional theory molecular dynamics, that the collective motion of excitons at the interface leads to plasma oscillations associated with optical excitation. By constructing a simple model of the van der Waals heterostructure, we show that there exists an unexpected criticality of the oscillations, yielding rapid charge transfer across the interface. Application to the MoS2/WS2 heterostructure yields good agreement with experiments, indicating near complete charge transfer within a timescale of 100 fs. PMID:27160484

  10. Vacuum-evaporated ferroelectric films and heterostructures of vinylidene fluoride/trifluoroethylene copolymer

    SciTech Connect

    Draginda, Yu. A. Yudin, S. G.; Lazarev, V. V.; Yablonskii, S. V.; Palto, S. P.

    2012-05-15

    The potential of the vacuum method for preparing ferroelectric films and photonic heterostructures from organic materials is studied. Vacuum-evaporated films of fluoropolymers and heterostructures on their basis are obtained and their ferroelectric and spectral properties are studied. In particular, homogeneous films of the well-known piezoelectric polymer polyvinylidene fluoride and ferroelectric material vinylidene fluoride/trifluoroethylene copolymer (P(VDF/TFE)) are produced. Experimental studies of vacuum-evaporated P(VDF/TFE) films confirmed their ferroelectric properties. The heterostructures composed of alternating layers of P(VDF/TFE) copolymer molecules and azodye molecules are fabricated by vacuum evaporation. Owing to the controlled layer thickness and a significant difference in the refractive indices of the P(VDF/TFE) copolymer and azodyes, these heterostructures exhibit properties of photonic crystals. This finding is confirmed by the occurrence of a photonic band in the absorption spectra of the heterostructures.

  11. Spin transport properties of partially edge-hydrogenated MoS2 nanoribbon heterostructure

    NASA Astrophysics Data System (ADS)

    Peng, Li; Yao, Kailun; Zhu, Sicong; Ni, Yun; Zu, Fengxia; Wang, Shuling; Guo, Bin; Tian, Yong

    2014-06-01

    We report ab initio calculations of electronic transport properties of heterostructure based on MoS2 nanoribbons. The heterostructure consists of edge hydrogen-passivated and non-passivated zigzag MoS2 nanoribbons (ZMoS2NR-H/ZMoS2NR). Our calculations show that the heterostructure has half-metallic behavior which is independent of the nanoribbon width. The opening of spin channels of the heterostructure depends on the matching of particular electronic orbitals in the Mo-dominated edges of ZMoS2NR-H and ZMoS2NR. Perfect spin filter effect appears at small bias voltages, and large negative differential resistance and rectifying effects are also observed in the heterostructure.

  12. Development and applications of the heterostructures synthesis based on CdS nanowires.

    PubMed

    Yan, Shancheng; Shi, Yi; Sun, Litao; Yan, Wenfu; Zhou, Minmin; Hu, Dong; Wu, Jiansheng; Wang, Jianyu; Shi, Bingjie; Lan, Xinke

    2013-01-01

    Semiconducting nanowire heterostructures are of particular interest because of their fascinating properties and potential applications in the field of nanoscale science. CdS, with a direct bandgap of 2.42 eV, is considered to be an excellent material for various optoelectronic applications in the visible range of the electromagnetic spectrum. On account of this, the diverse heterostructures based on CdS nanowires have drawn great attention owing to their novel properties. Here, we focus on recent routes used to synthesize diverse heterostructures based on CdS nanowires and the emergent properties of the one-dimensional nanowires heterostructures, and discuss their potential applicability in different fields. In particular, the mechanisms of various synthetic methods for the heterostructure based on the CdS nanowires are discussed detailedly. PMID:23646694

  13. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, Han; Bang, Junhyeok; Sun, Yiyang; Liang, Liangbo; West, Damien; Meunier, Vincent; Zhang, Shengbai

    2016-05-01

    The success of van der Waals heterostructures made of graphene, metal dichalcogenides and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that van der Waals heterostructues can exhibit ultrafast charge transfer despite the weak binding of these heterostructures. Here we find, using time-dependent density functional theory molecular dynamics, that the collective motion of excitons at the interface leads to plasma oscillations associated with optical excitation. By constructing a simple model of the van der Waals heterostructure, we show that there exists an unexpected criticality of the oscillations, yielding rapid charge transfer across the interface. Application to the MoS2/WS2 heterostructure yields good agreement with experiments, indicating near complete charge transfer within a timescale of 100 fs.

  14. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures.

    PubMed

    Wang, Han; Bang, Junhyeok; Sun, Yiyang; Liang, Liangbo; West, Damien; Meunier, Vincent; Zhang, Shengbai

    2016-01-01

    The success of van der Waals heterostructures made of graphene, metal dichalcogenides and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that van der Waals heterostructues can exhibit ultrafast charge transfer despite the weak binding of these heterostructures. Here we find, using time-dependent density functional theory molecular dynamics, that the collective motion of excitons at the interface leads to plasma oscillations associated with optical excitation. By constructing a simple model of the van der Waals heterostructure, we show that there exists an unexpected criticality of the oscillations, yielding rapid charge transfer across the interface. Application to the MoS2/WS2 heterostructure yields good agreement with experiments, indicating near complete charge transfer within a timescale of 100 fs. PMID:27160484

  15. Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

    NASA Astrophysics Data System (ADS)

    Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

    2016-04-01

    Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a ‘giant’ resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields.

  16. Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

    PubMed Central

    Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

    2016-01-01

    Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a ‘giant’ resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields. PMID:27126101

  17. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures

    DOE PAGESBeta

    Wang, Han; Bang, Junhyeok; Sun, Yiyang; West, Damien; Meunier, Vincent; Zhang, Shengbai; Liang, Linagbo

    2016-05-10

    Here, the success of van der Waals (vdW) heterostructures, made of graphene, metal dichalcogenides, and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that vdW heterostructues can exhibit ultra-fast charge transfer despite the weak binding of the heterostructure. Using time-dependent density functional theory molecular dynamics, we identify a strong dynamic coupling between the vdW layers associated with charge transfer. This dynamic coupling results in rapid nonlinear coherentmore » charge oscillations which constitute a purely electronic phenomenon and are shown to be a general feature of vdW heterostructures provided they have a critical minimum dipole coupling. Application to MoS2/WS2 heterostructure yields good agreement with experiment, indicating near complete charge transfer within a timescale of 100 fs.The success of van der Waals heterostructures made of graphene, metal dichalcogenides and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that van der Waals heterostructues can exhibit ultrafast charge transfer despite the weak binding of these heterostructures. Here we find, using time-dependent density functional theory molecular dynamics, that the collective motion of excitons at the interface leads to plasma oscillations associated with optical excitation. By constructing a simple model of the van der Waals heterostructure, we show that there exists an unexpected criticality of the oscillations, yielding rapid charge transfer across the

  18. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures

    SciTech Connect

    Wang, Han; Bang, Junhyeok; Sun, Yiyang; Liang, Chen; Damien, West; Meunier, Vincent; Zhang, Prof. Shengbai

    2016-01-01

    The success of van der Waals (vdW) heterostructures, made of graphene, metal dichalcogenides, and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that vdW heterostructues can exhibit ultra-fast charge transfer despite the weak binding of the heterostructure. Using time-dependent density functional theory molecular dynamics, we identify a strong dynamic coupling between the vdW layers associated with charge transfer. This dynamic coupling results in rapid nonlinear coherent charge oscillations which constitute a purely electronic phenomenon and are shown to be a general feature of vdW heterostructures provided they have a critical minimum dipole coupling. Application to MoS2/WS2 heterostructure yields good agreement with experiment, indicating near complete charge transfer within a timescale of 100 fs.The success of van der Waals heterostructures made of graphene, metal dichalcogenides and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that van der Waals heterostructues can exhibit ultrafast charge transfer despite the weak binding of these heterostructures. Here we find, using time-dependent density functional theory molecular dynamics, that the collective motion of excitons at the interface leads to plasma oscillations associated with optical excitation. By constructing a simple model of the van der Waals heterostructure, we show that there exists an unexpected criticality of the oscillations, yielding rapid charge transfer across the interface. Application

  19. Determination of interfacial states in solid heterostructures using a variable-energy positron beam

    DOEpatents

    Asoka kumar, Palakkal P. V.; Lynn, Kelvin G.

    1993-01-01

    A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.

  20. Determination of interfacial states in solid heterostructures using a variable-energy positron beam

    DOEpatents

    Asokakumar, P.P.V.; Lynn, K.G.

    1993-04-06

    A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO[sub 2]/Si, MOS or other semiconductor devices.

  1. Mixed multilayered vertical heterostructures utilizing strained monolayer WS2

    NASA Astrophysics Data System (ADS)

    Sheng, Yuewen; Xu, Wenshuo; Wang, Xiaochen; He, Zhengyu; Rong, Youmin; Warner, Jamie H.

    2016-01-01

    Creating alternating layers of 2D materials forms vertical heterostructures with diverse electronic and opto-electronic properties. Monolayer WS2 grown by chemical vapour deposition can have inherent strain due to interactions with the substrate. The strain modifies the band structure and properties of monolayer WS2 and can be exploited in a wide range of applications. We demonstrate a non-aqueous transfer method for creating vertical stacks of mixed 2D layers containing a strained monolayer of WS2, with Boron Nitride and Graphene. The 2D materials are all grown by CVD, enabling large area vertical heterostructures to be formed. WS2 monolayers grown by CVD directly on Si substrates with SiO2 surface are easily washed off by water and this makes aqueous based transfer methods challenging for creating vertical stacks on the growth substrate. 2D hexagonal Boron Nitride films are used to provide an insulating layer that limits interactions with a top graphene layer and preserve the strong photoluminescence from the WS2. This transfer method is suitable for layer by layer control of 2D material vertical stacks and is shown to be possible for all CVD grown samples, which opens up pathways for the rapid large scale fabrication of vertical heterostructure systems with atomic thickness depth control and large area coverage.Creating alternating layers of 2D materials forms vertical heterostructures with diverse electronic and opto-electronic properties. Monolayer WS2 grown by chemical vapour deposition can have inherent strain due to interactions with the substrate. The strain modifies the band structure and properties of monolayer WS2 and can be exploited in a wide range of applications. We demonstrate a non-aqueous transfer method for creating vertical stacks of mixed 2D layers containing a strained monolayer of WS2, with Boron Nitride and Graphene. The 2D materials are all grown by CVD, enabling large area vertical heterostructures to be formed. WS2 monolayers grown by

  2. Integration of Multifunctional Epitaxial Oxide Heterostructures with Si(001)

    NASA Astrophysics Data System (ADS)

    Singamaneni, Srinivasa Rao; Prater, John; Narayan, Jay

    Multifunctional heterostructures exhibit a wide range of functional properties, including colossal magneto-resistance, multiferroic behavior, and spin, charge, and orbital ordering. However, putting this functionality to work remains a challenge. To date, most of the previous works reported in the literature have dealt with heterostructures deposited on closely lattice matched (using lattice matching epitaxy-LME) insulating substrates such as DyScO3, NdGaO3, MgO, SrTiO3 and MBE-grown STO buffered Si(100). This presentation discusses the major advances in the integration of multifunctional oxide materials onto ubiquitous silicon semiconductor platform reported1-6 in the recent past by the presenting authors using a novel thin film growth approach, called `domain matching epitaxy'(DME), which minimizes the strain and nucleation of unwanted defects. The DME paradigm has been used across the large misfit scale (7-25%). Of particular interest, thin film heterostructures including two-phase multiferroics such as BiFeO3(BFO)/La0.7Sr0.3MnO3 (LSMO), BaTiO3(BTO)/LSMO, and LSMO/SrRuO3(SRO). These significant materials advancements may herald a flurry of exciting new advances in CMOS-compatible multifunctional devices.1S. S. Rao,et al.,Nano Letters 13, 5814 (2013); J. Appl. Phys., 116, 094103 (2014); J. Appl. Phys., 116, 224104 (2014); J. Appl. Phys., 117, 17D908 (2015); 5J. Appl. Phys., 117, 17B711 (2015); 6Current Opinion in Solid State and Materials Science. 19, 301-304 (2015).

  3. Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes

    SciTech Connect

    Semenov, A. V. Lopin, A. V.; Puzikov, V. M.; Baumer, V. N.; Dmitruk, I. N.

    2010-06-15

    The study demonstrates the possibility of forming heterostructures consisting of nanocrystalline SiC layers of the cubic 3C polytype (the lower layer on the substrate) and the rhombohedral 21R polytype (the upper layer) by direction deposition of nanocrystalline SiC layers onto a substrate subjected to gradient heating. The structure and order of arrangement of the SiC layers are analyzed in detail by X-ray diffraction studies, femtosecond photoluminescence measurements, and optical spectroscopy. The nature of the peaks observed in the photoluminescence, optical reflectance, and absorption spectra is discussed.

  4. III-V alloy heterostructure high speed avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.

  5. Dynamic Feedback in Ferromagnet-Spin Hall Metal Heterostructures.

    PubMed

    Cheng, Ran; Zhu, Jian-Gang; Xiao, Di

    2016-08-26

    In ferromagnet-normal-metal heterostructures, spin pumping and spin-transfer torques are two reciprocal processes that occur concomitantly. Their interplay introduces a dynamic feedback effect interconnecting energy dissipation channels of both magnetization and current. By solving the spin diffusion process in the presence of the spin Hall effect in the normal metal, we show that the dynamic feedback gives rise to (i) a nonlinear magnetic damping that is crucial to sustain uniform steady-state oscillations of a spin Hall oscillator at large angles and (ii) a frequency-dependent spin Hall magnetoimpedance that reduces to the spin Hall magnetoresistance in the dc limit. PMID:27610880

  6. Multibarrier heterostructure GaAs/AlAs switch

    NASA Astrophysics Data System (ADS)

    Reklaitis, A.

    1999-02-01

    A multibarrier heterostructure GaAs/AlAs current switching diode has been proposed and investigated by Monte Carlo particle simulations. The switching phenomenon is based on electron tunneling and thermoemission from the GaAs wells to the AlAs barriers, electron drift across the thin AlAs barriers followed by a subsequent impact ionization in the undoped GaAs layers. The calculated switching voltage is close to 100 V for the diode involving four AlAs barriers at 300 K lattice temperature. The estimated switching time is in the order of 10 ps.

  7. An Ebers-Moll model for the heterostructure bipolar transistor

    NASA Astrophysics Data System (ADS)

    Lundstrom, M. S.

    1986-11-01

    An Ebers-Moll model for the heterostructure bipolar transistor (HBT) is developed. The model describes both single and double heterojunction transistors with or without band spikes and applies to uniform or graded base HBTs. Model parameters are directly related to device parameters such as doping densities, dimensions and band spikes. Junction velocities are introduced to describe the transport of carriers across the junctions. Results demonstrate that even for compositionally graded junctions, transport across the junctions may limit HBT performance if the base is graded. Use of the model is illustrated by examining a recently proposed technique for extracting conduction band spikes by comparing forward and inverted I- V characteristics.

  8. Analysis of photonic crystal double heterostructure resonant cavities

    NASA Astrophysics Data System (ADS)

    Mock, Adam

    Two-dimensional photonic crystals represent a versatile technology platform for constructing photonic integrated circuits. Low-loss and small footprint waveguides and cavities can be combined to make delay lines, modulators, filters and lasers for efficient optical signal processing. However, this diverse functionality comes at the expense of higher complexity in both the fabrication and themodeling of these devices. This Thesis discusses the finite-difference time-domain numerical modeling of large quality factor photonic crystal cavities for chip-scale laser applications. In Chapter 2 the role of the quality factor in estimating laser threshold is derived starting from Maxwell's equations. Expressions for modal loss and gain are derived. Chapter 3 discusses methods for extracting the quality factor from finite-difference time-domain simulations. Even with large-scale parallel computing, only a short record of the time evolution of the fields can be recorded. To get around this issue, Pade functions are fitted to the available data in the frequency domain. Once the analysis tools have been described and demonstrated, they are applied to the photonic crystal double heterostructure cavity which has been shown to have quality factors in excess of one million and mode volumes on the order of a cubic wavelength. A detailed description of the spectral and modal properties of heterostructure cavities is presented, and a method for mode discrimination is discussed. The effect of heat sinking dielectric lower substrates on the optical loss of the heterostructure cavity is investigated, and it is seen that the quality factor is significantly reduced as the index of the lower substrate is increased. A modified heterostructure cavity with glide plane symmetry is shown to have significantly reduced out-of-plane leakage. An optimized design is proposed for continuous wave edge-emitting laser operation. Finally, a novel approach for laser simulation is introduced in which a

  9. Micromagnetic simulation of exchange coupled ferri-/ferromagnetic heterostructures

    PubMed Central

    Oezelt, Harald; Kovacs, Alexander; Reichel, Franz; Fischbacher, Johann; Bance, Simon; Gusenbauer, Markus; Schubert, Christian; Albrecht, Manfred; Schrefl, Thomas

    2015-01-01

    Exchange coupled ferri-/ferromagnetic heterostructures are a possible material composition for future magnetic storage and sensor applications. In order to understand the driving mechanisms in the demagnetization process, we perform micromagnetic simulations by employing the Landau–Lifshitz–Gilbert equation. The magnetization reversal is dominated by pinning events within the amorphous ferrimagnetic layer and at the interface between the ferrimagnetic and the ferromagnetic layer. The shape of the computed magnetization reversal loop corresponds well with experimental data, if a spatial variation of the exchange coupling across the ferri-/ferromagnetic interface is assumed. PMID:25937693

  10. Magnetoelastic coupling in epitaxial cobalt ferrite/barium titanate heterostructures

    NASA Astrophysics Data System (ADS)

    Gräfe, Joachim; Welke, Martin; Bern, Francis; Ziese, Michael; Denecke, Reinhard

    2013-08-01

    Ultra-thin cobalt ferrite films have been synthesised on ferroelectric barium titanate crystals. The cobalt ferrite films exhibit a magnetic response to strain induced by structural changes in the barium titanate substrate, suggesting a pathway to multiferroic coupling. These structural changes are achieved by heating through the phase transition temperatures of barium titanate. In addition the ferromagnetic signal of the substrate itself is taken into account, addressing the influence of impurities or defects in the substrate. The cobalt ferrite/barium titanate heterostructure is a suitable oxidic platform for future magnetoelectric applications with an established ferroelectric substrate and widely tuneable magnetic properties by changing the transition metal in the ferrite film.

  11. Negative compressibility in graphene-terminated black phosphorus heterostructures

    NASA Astrophysics Data System (ADS)

    Wu, Yingying; Chen, Xiaolong; Wu, Zefei; Xu, Shuigang; Han, Tianyi; Lin, Jiangxiazi; Skinner, Brian; Cai, Yuan; He, Yuheng; Cheng, Chun; Wang, Ning

    2016-01-01

    Negative compressibility is a many-body effect wherein strong correlations give rise to an enhanced gate capacitance in two-dimensional (2D) electronic systems. We observe capacitance enhancement in a newly emerged 2D layered material, atomically thin black phosphorus (BP). The encapsulation of BP by hexagonal boron nitride sheets with few-layer graphene as a terminal ensures ultraclean heterostructure interfaces, allowing us to observe negative compressibility at low hole carrier concentrations. We explain the negative compressibility based on the Coulomb correlation among in-plane charges and their image charges in a gate electrode in the framework of Debye screening.

  12. Npn double heterostructure bipolar transistor with ingaasn base region

    DOEpatents

    Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

    2004-07-20

    An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

  13. Silicon-based silicon–germanium–tin heterostructure photonics

    PubMed Central

    Soref, Richard

    2014-01-01

    The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479

  14. Zinc-oxide-based nanostructured materials for heterostructure solar cells

    SciTech Connect

    Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A. Somov, P. A.; Terukov, E. I.

    2015-10-15

    Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics.

  15. Micromagnetic simulation of exchange coupled ferri-/ferromagnetic heterostructures

    NASA Astrophysics Data System (ADS)

    Oezelt, Harald; Kovacs, Alexander; Reichel, Franz; Fischbacher, Johann; Bance, Simon; Gusenbauer, Markus; Schubert, Christian; Albrecht, Manfred; Schrefl, Thomas

    2015-05-01

    Exchange coupled ferri-/ferromagnetic heterostructures are a possible material composition for future magnetic storage and sensor applications. In order to understand the driving mechanisms in the demagnetization process, we perform micromagnetic simulations by employing the Landau-Lifshitz-Gilbert equation. The magnetization reversal is dominated by pinning events within the amorphous ferrimagnetic layer and at the interface between the ferrimagnetic and the ferromagnetic layer. The shape of the computed magnetization reversal loop corresponds well with experimental data, if a spatial variation of the exchange coupling across the ferri-/ferromagnetic interface is assumed.

  16. Calculation of compositional dependence of stresses in GaInAs/GaAs strained multilayer heterostructures

    NASA Astrophysics Data System (ADS)

    Nakajima, Kazuo

    1993-02-01

    A theoretical model was proposed to calculate the stress in strained multilayer heterostructures. In this model, each composed crystal layer is divided into many imaginary thin layers. The face force, moment and strained balance were considered over all the imaginary thin layers with coherent interfaces. The accurate bending moment for multilayer heterostructures was derived by expanding Davidenkov's expression of a two-phase composite layer, and it was used in the model. Using this model, the stresses at 25°C were calculated for both the GaInAs/GaAs strained multilayer heterostructure and the GaInAs/GaAs single layer heterostructure, and were compared with each other. In this calculation, the relative thickness of GaInAs layers in the GaInAs/GaAs strained multilayer heterostructure is set up to be equal to that of the GaInAs layer in the GaInAs/GaAs single layer heterostructure. The stress in both the structures was calculated over the entire GaInAs layer composition range. The relative stress in the GaInAs/GaAs bottom heterointerface of the multilayer heterostructure is smaller than that in the GaInAs/GaAs heterointerface of the single layer heterostructure especially for In-rich GaInAs. However, the absolute stress in the GaInAs layer at the bottom heterointerface of the multilayer heterostructure is larger than that in the GaInAs layer at the heterointerface of the single layer heterostructure over the entire GaInAs composition range. The difference between the stresses of both heterostructures increases as the thickness of the GaInAs layer increases. The total thickness of GaInAs layers in the multilayer heterostructure corresponding to a constant interfacial relative stress decreases as the Ga composition in the GaInAs layers decreases and it abruptly decreases when the Ga composition is smaller than 0.4. The relative stress in the GaInAs/GaAs bottom heterointerface of the multilayer heterostructure decreases as the thickness of the GaAs barrier layer

  17. Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure

    SciTech Connect

    Singh, Kirandeep; Kaur, Davinder; Singh, Sushil Kumar

    2014-09-21

    The strain mediated electrical and magnetic properties were investigated in PZT/Ni-Mn-In heterostructure deposited on Si (100) by dc/rf magnetron sputtering. X-ray diffraction pattern revealed that (220) orientation of Ni-Mn-In facilitate the (110) oriented tertragonal phase growth of PZT layer in PZT/Ni-Mn-In heterostructure. A distinctive peak in dielectric constant versus temperature plots around martensitic phase transformation temperature of Ni-Mn-In showed a strain mediated coupling between Ni-Mn-In and PZT layers. The ferroelectric measurement taken at different temperatures exhibits a well saturated and temperature dependent P-E loops with a highest value of P{sub sat}~55 μC/cm² obtained during martensite-austenite transition temperature region of Ni-Mn-In. The stress induced by Ni-Mn-In layer on upper PZT film due to structural transformation from martensite to austenite resulted in temperature modulated Tunability of PZT/Ni-Mn-In heterostructure. A tunability of 42% was achieved at 290 K (structural transition region of Ni-Mn-In) in these heterostructures. I-V measurements taken at different temperatures indicated that ohmic conduction was the main conduction mechanism over a large electric field range in these heterostructures. Magnetic measurement revealed that heterostructure was ferromagnetic at room temperature with a saturation magnetization of ~123 emu/cm³. Such multiferroic heterostructures exhibits promising applications in various microelectromechanical systems.

  18. Hybrid colloidal Au-CdSe pentapod heterostructures synthesis and their photocatalytic properties.

    PubMed

    Haldar, Krishna Kanta; Sinha, Godhuli; Lahtinen, Jouko; Patra, Amitava

    2012-11-01

    In this report, we present a self-driven chemical process to design exclusive Au/CdSe pentapod heterostructures with Au core and CdSe arms. We have analyzed these heterostructures using high-resolution transmission electron microscope (HRTEM), high angle annular dark field-scanning transmission electron microscopic (HAADF-STEM), X-ray diffraction, and X-ray photoelectron spectroscopy (XPS) studies. Microscopic studies suggest that pentapod arms of CdSe are nucleated on the (111) facets of Au and linearly grown only along the [001] direction. From the XPS study, the shifting of peak positions in the higher binding energy region for Au/CdSe heterostructures compared to Au nanoparticles has been found which indicates the charge transfer from CdSe to Au in heterostructures. The steady state and time resolved spectroscopic studies unambiguously confirm the electron transfer from photoexcited CdSe to Au, and the rate of electron transfer is found to be 3.58×10⁸ s⁻¹. It is interesting to note that 87.2% of R6G dye is degraded by the Au/CdSe heterostructures after 150 min UV irradiation, and the apparent rate constant for Au/CdSe heterostructures is found to be 0.013 min⁻¹. This new class of metal-semiconductor heterostructures opens up new possibilities in photocatalytic, solar energy conversion, photovoltaic, and other new emerging applications. PMID:23113704

  19. Optical properties of GaS-Ca(OH)2 bilayer heterostructure

    NASA Astrophysics Data System (ADS)

    Torun, E.; Sahin, H.; Peeters, F. M.

    2016-02-01

    Finding novel atomically thin heterostructures and understanding their characteristic properties are critical for developing better nanoscale optoelectronic devices. In this study, we investigate the electronic and optical properties of a GaS-Ca(OH)2 heterostructure using first-principle calculations. The band gap of the GaS-Ca(OH)2 heterostructure is significantly reduced when compared to those of the isolated constituent layers. Our calculations show that the GaS-Ca(OH)2 heterostructure is a type-II heterojunction which can be used to separate photoinduced charge carriers where electrons are localized in GaS and holes in the Ca(OH)2 layer. This leads to spatially indirect excitons which are important for solar energy and optoelectronic applications due to their long lifetime. By solving the Bethe-Salpeter equation on top of a single shot GW calculation (G0W0 ), the dielectric function and optical oscillator strength of the constituent monolayers and the heterostructure are obtained. The oscillator strength of the optical transition for the GaS monolayer is an order of magnitude larger than the Ca(OH)2 monolayer. We also found that the calculated optical spectra of different stacking types of the heterostructure show dissimilarities, although their electronic structures are rather similar. This prediction can be used to determine the stacking type of ultrathin heterostructures.

  20. Novel magnetic and electronic states in manganite-iridate heterostructures

    NASA Astrophysics Data System (ADS)

    Nichols, John; Lee, Shinbuhm; Petrie, Jon; Meyer, Tricia; Gao, Xiang; Guo, Erjia; Freeland, John; Yi, Di; Liu, Jian; Haskel, Daniel; Ward, Thomas Zac; Eres, Gyula; Lauter, Valeria; Fitzsimmons, Michael R.; Lee, Ho Nyung

    Strong correlation between spin, charge, lattice, and orbital order parameters has proven to give rise to exotic physical phenomena, while epitaxial design of materials with strong interfacial coupling is an efficient technique to tune such parameters. Although there have been numerous studies of interfaces between 3 d-3 d and 4 d-3 d compounds, only few studies reported work on 3 d and 5 d materials and there has been no report on strong interfacial coupling in such systems. We have synthesized high quality [(AMnO3)m /(SrIrO3)n ]z (A = Sr, La) heterostructures by pulsed laser epitaxy on SrTiO3 (001) substrates and have observed interesting novel magnetic and electronic ground states, which are highly sensitive to the degree of dimensional confinement in the heterostructures. Based on studies with x-ray diffraction, SQUID, dc-transport, x-ray circular dichroism, and polarized neutron reflectometry measurements, we will report intriguing magnetic and transport properties that provide the first evidence of strong interfacial coupling between 5 d and 3 d materials. This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

  1. Electroresistance and field effect studies on manganite based heterostructure

    SciTech Connect

    Solanki, P. S.; Khachar, Uma; Vagadia, Megha; Ravalia, Ashish; Katba, Savan; Kuberkar, D. G.

    2015-04-14

    Electronic properties of manganites are significantly important for various spintronic applications such as microelectronics, magnetic data storage, communication technologies, and memory devices. Influence of applied electric field on the room temperature charge transport in ZnO/La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrNb{sub 0.002}Ti{sub 0.998}O{sub 3} (SNTO) heterostructure has been investigated using field effect studies. Large negative and positive electroresistance has been observed in heterostructure under various possible circuit geometries. Field effect studies have been carried out using three different circuit geometries, namely: (i) ZnO as a control electrode (E{sub LZ}), (ii) SNTO as a control electrode (E{sub LS}), and (iii) shorted ZnO and SNTO as control electrodes (E{sub LZS}). For this, channel electric field (E{sub CH}) dependent variation in channel resistance (R{sub C}) (of manganite channel) and I-V (across manganite channel) under various control fields (E{sub C}) have been studied. Variation in barrier height (Φ{sub B}) with control field (E{sub C}) for different geometries has been discussed.

  2. Polarized neutron reflectivity and scattering studies of magnetic heterostructures

    NASA Astrophysics Data System (ADS)

    Zabel, H.; Theis-Bröhl, K.

    2003-02-01

    The current interest in the magnetism of ultrathin films and multilayers is driven by their manifold applications in the magneto-and spin-electronic areas, for instance as magnetic field sensors or as information storage devices. In this regard, there is a large interest in exploring spin structures and spin disorder at the interface of magnetic heterostructures, to investigate magnetic domains in thin films and superlattices, and to understand remagnetization processes of various laterally shaped magnetic nanostructures. Traditionally neutron scattering has played a dominant role in the determination of spin structures, phase transitions and magnetic excitations in bulk materials. Today, its potential for the investigation of thin magnetic films has to be redefined. Polarized neutron reflectivity (PNR) at small wavevectors can provide precise information on the magnetic field distribution parallel to the film plane and on layer resolved magnetization vectors. In addition, PNR is not only sensitive to structural interface roughness but also to the magnetic roughness. Furthermore, magnetic hysteresis measurements from polarized small angle Bragg reflections allows us to filter out correlation effects during magnetization reversals of magnetic stripes and islands. An overview is provided on most recent PNR investigations of magnetic heterostructures.

  3. Metal Semiconductor Heterostructures for Photocatalytic Conversion of Light Energy.

    PubMed

    Dutta, Sumit Kumar; Mehetor, Shyamal Kumar; Pradhan, Narayan

    2015-03-19

    For fast separation of the photogenerated charge carriers, metal semiconductor heterostructures have emerged as one of the leading materials in recent years. Among these, metal Au coupled with low bandgap semiconductors remain as ideal materials where both can absorb the solar light in the visible region. It is also established that on excitation, the plasmonic state of gold interacts with excited state of semiconductor and helps for the delocalization of the photogenerated electrons. Focusing these materials where electron transfer preferably occurs from semiconductor to metal Au on excitation, in this Perspective, we report the latest developments in the synthetic chemistry in designing such nano heterostructures and discuss their photocatalytic activities in organic dye degradation/reduction and/or photocatalytic water splitting for generation of hydrogen. Among these, materials such as Au-CZTS, Au-SnS, Au-Bi2S3, Au-ZnSe, and so forth are emphasized, and their formation chemistry as well as their photocatalytic activities are discussed in this Perspective. PMID:26262849

  4. Tuning the physical properties in strontium iridate heterostructures

    NASA Astrophysics Data System (ADS)

    Nichols, John; Meyer, Tricia; Lee, Ho Nyung

    2015-03-01

    Strontium iridate (Srn+1IrnO3n+1) has received lots of attention recently for its potential to reveal novel physical phenomena due to strong spin-orbital coupling with an interaction energy comparable to that of the on-site Coulomb interaction and crystal field splitting. The coexistence of fundamental interactions has created an exotic Jeff = 1/2 antiferromagnetic insulating ground state in Sr2IrO4. In particular, it is known that this system can be driven into a metallic state with the simultaneous increase in dimensionality (n) and strain. We have investigated the effects of electron confinement by interfacing strontium iridates with other perovskite oxides. We have synthesized thin film heterostructures, SrIrO3/AMO3 (A = Sr, La; B = Ti, Mn, Rh), layer-by-layer with pulsed laser deposition equipped with reflection high-energy electron diffraction. Based on investigations with x-ray diffraction, dc transport, SQUID magnetometry, and various spectroscopic measurements, we will present that the physical properties of the heterostructures are strongly dependent on spatial confinement and epitaxial strain. *This work was supported by the U. S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division.

  5. Valley-Polarized Interlayer Excitons in 2D Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Rivera, Pasqual; Seyler, Kyle; Yu, Hongyi; Schaibley, John; Yan, Jiaqiang; Mandrus, David; Xu, Xiaodong

    Vertically stacked monolayers of MoSe2 and WSe2 feature a type-II band alignment causing the formation of interlayer excitons, where the Coulomb bound hole and electron reside in different layers. This species of exciton has lifetime many orders of magnitude longer than intralayer valley excitons, providing a unique and advantageous system for investigating valley exciton physics. Here, we optically pump the MoSe2-WSe2 heterostructure with circularly polarized light, creating interlayer valley excitons with gate-tunable spin-valley polarization lifetime up to 40 ns. This long valley lifetime enables the diffusion of the interlayer valley exciton gas to be visualized. Under increasing excitation power we observe the formation of a ring in the spatial distribution of the valley polarization, a manifestation of significant valley-selective exchange interactions at high exciton densities. The combination of long valley polarization and spatial diffusion makes the interlayer exciton in semiconductor heterostructures an exciting platform for studies of valley exciton physics.

  6. Electric-field control of magnetism in multiferroic heterostructures

    NASA Astrophysics Data System (ADS)

    Zhao, Yonggang; Zhang, Sen; Li, Peisen; Chen, Aitian; Li, Dalai; Yang, Lifeng; Rizwan, S.; Liu, Y.; Xiao, Xia; Wu, Yizheng; Jin, Xiaofeng; Han, Xiufeng; Zhang, Huiyun; Zhu, Meihong

    2015-03-01

    We have studied electric-field control of magnetism in different multiferroic heterostructures, composed of ferromagnetic (FM) and ferroelectric (FE) materials such as Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) and magnetic tunnel junctions (MTJ) on PMN-PT, etc. A giant electric-field control of magnetization as well as magnetic anisotropy was observed in a CoFeB/PMN-PT structure at room temperature with a maximum relative magnetization change up to 83 percent and a 90° rotation of the easy axis. In MTJ of CoFeB/AlOx/CoFeB grown on PMN-PT, we demonstrate a reversible, continuous magnetization rotation and manipulation of tunneling magnetoresistance at room temperature by electric fields without the assistance of a magnetic field. These results show the interesting new physics and potential applications of the FM/FE multiferroic heterostructures.

  7. Strain engineered optoelectronic properties of transition metal dichalcogenides lateral heterostructures

    NASA Astrophysics Data System (ADS)

    Lee, Jaekwang; Yoon, Mina

    2015-03-01

    Most three-dimensional bulk-scale materials rarely survive beyond 1% strain, while recently spotlighted two-dimensional (2-D) materials can sustain a high elastic strain (up to 10%) to optimize optical quantities such as band gaps and absorption spectra governing optoelectronic device performance. Despite the enormous interest in strained 2-D materials, most researches are focused on single materials or vertical heterostructures where precise control of stacking orientation is challenging. Here, using first-principles density-functional calculations, we explore how uniaxial tensile strains modify overall electronic and optical properties of transition metal dichalcogenides lateral heterostructures, such as MoX2/WX2 (X =S, Se). Based on the detailed optoelectronic information, we predict the optimal strain condition for maximal power efficiency. Furthermore, we find that uniaxial tensile strain readily develops a continuously varying direct-bandgap across the lateral heterojunctions, which results in the broad range absorption of solar spectrum useful for future optoelectronic devices. This research was conducted at the CNMS, which is sponsored at Oak Ridge National Laboratory (ORNL) by the Office of Basic Energy Sciences, U.S. Department of Energy; a portion of theory work was supported by the LDRD Program of ORNL.

  8. Semiconductor-oxide heterostructured nanowires using postgrowth oxidation.

    PubMed

    Wallentin, Jesper; Ek, Martin; Vainorious, Neimantas; Mergenthaler, Kilian; Samuelson, Lars; Pistol, Mats-Erik; Reine Wallenberg, L; Borgström, Magnus T

    2013-01-01

    Semiconductor-oxide heterointerfaces have several electron volts high-charge carrier potential barriers, which may enable devices utilizing quantum confinement at room temperature. While a single heterointerface is easily formed by oxide deposition on a crystalline semiconductor, as in MOS transistors, the amorphous structure of most oxides inhibits epitaxy of a second semiconductor layer. Here, we overcome this limitation by separating epitaxy from oxidation, using postgrowth oxidation of AlP segments to create axial and core-shell semiconductor-oxide heterostructured nanowires. Complete epitaxial AlP-InP nanowire structures were first grown in an oxygen-free environment. Subsequent exposure to air converted the AlP segments into amorphous aluminum oxide segments, leaving isolated InP segments in an oxide matrix. InP quantum dots formed on the nanowire sidewalls exhibit room temperature photoluminescence with small line widths (down to 15 meV) and high intensity. This optical performance, together with the control of heterostructure segment length, diameter, and position, opens up for optoelectrical applications at room temperature. PMID:24195687

  9. Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures

    PubMed Central

    2015-01-01

    In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor–liquid–solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I–V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm2. Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the ⟨111⟩ oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure was used to fabricate a novel impact ionization device. PMID:26052733

  10. Interface driven states in ferromagnetic topological insulator heterostructures

    NASA Astrophysics Data System (ADS)

    Lauter, Valeria; Katmis, Ferhat; Moodera, Jagadeesh

    The broken time reversal symmetry (TRS) states can be introduced into a topological insulator (TI) material by ferromagnetic ordering at the interface. Recently we demonstrated a fundamental step towards realization of high temperature magnetization in Bi2Se3-EuS TI-FMI heterostructures through observation of magnetic proximity-induced symmetry breaking on the Bi2Se3 surface via the exchange interaction by depositing EuS film on the top of the Bi2Se3 surface.Here we show that we can independently break the TRS on both surfaces of a TI, which brings the long-range induced magnetism on either or both surfaces of a TI in a controlled way. We provide a depth-sensitive data on details of magnetic proximity effect in hidden interfaces by Polarized Neutron Reflectometry. The proximity coupling strength and penetration depth of magnetism into TI are extracted as functions of temperature, magnetic field and magnetic history. The large neutron absorption of Eu atoms serves as the element sensitivity and enables us to identify such magnetism in TI as proximity magnetism. This provides a next step to realization of complex heterostructures of TI and FMI leading to wide applications in TI-based next generation spintronic devices. Supported by U.S. DOE, Office of Science, BES, MIT MRSEC award DMR-0819762, NSF Grant DMR-1207469, ONR Grant N00014-13-1-0301, NSF Grant DMR-1231319.

  11. Electroluminescence of ZnO-based semiconductor heterostructures

    SciTech Connect

    Novodvorskii, O A; Lotin, A A; Panchenko, Vladislav Ya; Parshina, L S; Khaidukov, E V; Zuev, D A; Khramova, O D

    2011-01-31

    Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm{sup -2}, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs. (lasers)

  12. Photon-Inhibited Topological Transport in Quantum Well Heterostructures

    NASA Astrophysics Data System (ADS)

    Farrell, Aaron; Pereg-Barnea, T.

    2015-09-01

    Here we provide a picture of transport in quantum well heterostructures with a periodic driving field in terms of a probabilistic occupation of the topologically protected edge states in the system. This is done by generalizing methods from the field of photon-assisted tunneling. We show that the time dependent field dresses the underlying Hamiltonian of the heterostructure and splits the system into sidebands. Each of these sidebands is occupied with a certain probability which depends on the drive frequency and strength. This leads to a reduction in the topological transport signatures of the system because of the probability to absorb or emit a photon. Therefore when the voltage is tuned to the bulk gap the conductance is smaller than the expected 2 e2/h . We refer to this as photon-inhibited topological transport. Nevertheless, the edge modes reveal their topological origin in the robustness of the edge conductance to disorder and changes in model parameters. In this work the analogy with photon-assisted tunneling allows us to interpret the calculated conductivity and explain the sum rule observed by Kundu and Seradjeh.

  13. Observation of complete space-charge-limited transport in metal-oxide-graphene heterostructure

    SciTech Connect

    Chen, Wei; Wang, Fei; Fang, Jingyue; Wang, Guang; Qin, Shiqiao; Zhang, Xue-Ao E-mail: xazhang@nudt.edu.cn; Wang, Chaocheng; Wang, Li E-mail: xazhang@nudt.edu.cn

    2015-01-12

    The metal-oxide-graphene heterostructures have abundant physical connotations. As one of the most important physical properties, the electric transport property of the gold-chromium oxide-graphene heterostructure has been studied. The experimental measurement shows that the conductive mechanism is dominated by the space-charge-limited transport, a kind of bulk transport of an insulator with charge traps. Combining the theoretical analysis, some key parameters such as the carrier mobility and trap energy also are obtained. The study of the characteristics of the metal-oxide-graphene heterostructures is helpful to investigate the graphene-based electronic and photoelectric devices.

  14. Temperature dependence of material gain of InGaAsP/InP nano-heterostructure

    NASA Astrophysics Data System (ADS)

    Yadav, Rashmi; Alvi, P. A.

    2014-04-01

    This paper deals with temperature dependent study on material gain of InGaAsP/InP lasing nano-heterostructure with in TE mode. The model is based on simple separate confinement heterostructure (SCH). Material gain for the structure has been simulated for below and above the room temperatures. Different behaviors of the material gain for both ranges of the temperature have been reported in this paper. The results obtained in the simulation of the heterostructures suggest that only the shift in maximum gain takes place that appears at the lasing wavelength ˜ 1.40 μm.

  15. Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

    SciTech Connect

    Xia, Congxin Xue, Bin; Wang, Tianxing; Peng, Yuting; Jia, Yu

    2015-11-09

    The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

  16. Photocatalytic Reduction of CO2 over Heterostructure Semiconductors into Value-Added Chemicals.

    PubMed

    Guo, Ling-Ju; Wang, Yan-Jie; He, Tao

    2016-08-01

    Photoreduction of CO2 , which utilizes solar energy to convert CO2 into hydrocarbons, can be an effective means to overcome the increasing energy crisis and mitigate the rising emissions of greenhouse gas. This article covers recent advances in the CO2 photoreduction over heterostructure-based photocatalysts. The fundamentals of CO2 photoreduction and classification of the heterostructured photocatalysts are discussed first, followed by the latest work on the CO2 photoreduction over heterostructured photocatalysts in terms of the classification of the coupling semiconductors. Finally, a brief summary and a perspective on the challenges in this area are presented. PMID:27276171

  17. Graphene/CdTe heterostructure solar cell and its enhancement with photo-induced doping

    SciTech Connect

    Lin, Shisheng Chen, Hongsheng; Li, Xiaoqiang; Zhang, Shengjiao; Wang, Peng; Xu, Zhijuan; Zhong, Huikai; Wu, Zhiqian

    2015-11-09

    We report a type of solar cell based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.10%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by field effect transport, Raman, photoluminescence, and quantum efficiency measurements. This work demonstrates a feasible way of improving the performance of graphene/semiconductor heterostructure solar cells by combining one dimensional with two dimensional materials.

  18. The double heterostructure: the concept and its applications in physics, electronics, and technology (Nobel lecture).

    PubMed

    Alferov, Z I

    2001-09-17

    The art and science of heterostructure design has not remained still since its founding: While the theoretical principles initially advanced rapidly, experimental realization initially lagged until the ideal AlGaAs solid solutions were found. From this point, development into application proceeded apace. In this Review, these intial steps and the current position of heterostructure applications are surveyed. New developments, such as the inclusion of quantum dots into heterostructures-with its concomitant world-record threshold current for laser activity-and future challenges are also elucidated. PMID:23686987

  19. Graphene/CdTe heterostructure solar cell and its enhancement with photo-induced doping

    NASA Astrophysics Data System (ADS)

    Lin, Shisheng; Li, Xiaoqiang; Zhang, Shengjiao; Wang, Peng; Xu, Zhijuan; Zhong, Huikai; Wu, Zhiqian; Chen, Hongsheng

    2015-11-01

    We report a type of solar cell based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.10%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by field effect transport, Raman, photoluminescence, and quantum efficiency measurements. This work demonstrates a feasible way of improving the performance of graphene/semiconductor heterostructure solar cells by combining one dimensional with two dimensional materials.

  20. Complete analysis of a transmission electron diffraction pattern of a MoS2-graphite heterostructure.

    PubMed

    Adrian, Marlene; Senftleben, Arne; Morgenstern, Silvio; Baumert, Thomas

    2016-07-01

    The combination of various 2D layered materials in multilayer heterostructures arises great interest in the current science. Due to the large variety of electronic properties of the group of 2D layered materials the combination opens a new pathway towards ultrasmall electronic devices. In this contribution we present a full mathematical description of multilayer heterostructure samples and their diffraction patterns including a proposal of a consistent assignment of the superstructure diffraction spots. A 27nm thick MoS2-graphite heterostructure was produced and fully analysed with the methods presented in this paper. PMID:27107328

  1. Chemical changes in carbon Nanotube-Nickel/Nickel Oxide Core/Shell nanoparticle heterostructures treated at high temperatures

    SciTech Connect

    Chopra, Nitin; McWhinney, Hylton G.; Shi Wenwu

    2011-06-15

    Heterostructures composed of carbon nanotube (CNT) coated with Ni/NiO core/shell nanoparticles (denoted as CNC heterostructures) were synthesized in a wet-chemistry and single-step synthesis route involving direct nucleation of nanoparticles on CNT surface. Two different aspects of CNC heterostructures were studied here. First, it was observed that the nanoparticle coatings were more uniform on the as-produced and non-purified CNTs compared to purified (or acid treated) CNTs. These heterostructures were characterized using electron microscopy, Raman spectroscopy, and energy dispersive spectroscopy. Second, thermal stability of CNC heterostructures was studied by annealing them in N{sub 2}-rich (O{sub 2}-lean) environment between 125 and 750 deg. C for 1 h. A detailed X-ray photoelectron spectroscopy and Raman spectroscopy analysis was performed to evaluate the effects of annealing temperatures on chemical composition, phases, and stability of the heterostructures. It was observed that the CNTs present in the heterostructures completely decomposed and core Ni nanoparticle oxidized significantly between 600 and 750 deg. C. - Research Highlights: {yields} Heterostructures composed of CNTs coated with Ni/NiO core/shell nanoparticles. {yields} Poor nanoparticle coverage on purified CNT surface compared to non-purified CNTs. {yields} CNTs in heterostructures decompose between 600 and 750 deg. C in N{sub 2}-rich atmosphere. {yields} Metallic species in heterostructures were oxidized at higher temperatures.

  2. Scanning probe microscopy investigation of complex-oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Bi, Feng

    Advances in the growth of precisely tailored complex-oxide heterostructures have led to new emergent behavior and associated discoveries. One of the most successful examples consists of an ultrathin layer of LaAlO 3 (LAO) deposited on TiO2-terminated SrTiO3 (STO), where a high mobility quasi-two dimensional electron liquid (2DEL) is formed at the interface. Such 2DEL demonstrates a variety of novel properties, including field tunable metal-insulator transition, superconductivity, strong spin-orbit coupling, magnetic and ferroelectric like behavior. Particularly, for 3-unit-cell (3 u.c.) LAO/STO heterostructures, it was demonstrated that a conductive atomic force microscope (c-AFM) tip can be used to "write" or "erase" nanoscale conducting channels at the interface, making LAO/STO a highly flexible platform to fabricate novel nanoelectronics. This thesis is focused on scanning probe microscopy studies of LAO/STO properties. We investigate the mechanism of c-AFM lithography over 3 u.c. LAO/STO in controlled ambient conditions by using a vacuum AFM, and find that the water molecules dissociated on the LAO surface play a critical role during the c-AFM lithography process. We also perform electro-mechanical response measurements over top-gated LAO/STO devices. Simultaneous piezoresponse force microscopy (PFM) and capacitance measurements reveal a correlation between LAO lattice distortion and interfacial carrier density, which suggests that PFM could not only serve as a powerful tool to map the carrier density at the interface but also provide insight into previously reported frequency dependence of capacitance enhancement of top-gated LAO/STO structures. To study magnetism at the LAO/STO interface, magnetic force microscopy (MFM) and magnetoelectric force microscopy (MeFM) are carried out to search for magnetic signatures that depend on the carrier density at the interface. Results demonstrate an electronicallycontrolled ferromagnetic phase on top-gated LAO

  3. Novel nanostructured thin film heterostructures: Growth, nanoscale characterization and properties

    NASA Astrophysics Data System (ADS)

    Chugh, Amit

    During my graduate study, I have been involved in the growth of new nano heterostructures grown by Pulsed Laser Deposition and by Laser MBE with the emphasis on understanding the thin film growth process by a new paradigm of Domain Matching Epitaxy (DME) and to integrate them on substrates like silicon, sapphire and new metallic substrates like Ni with exciting technological applications. The DME involves matching of integral multiples of lattice planes (diffracting as well as nondiffracting) between the film and the substrate, and this matching could be different in different directions. The idea of matching planes is derived from the basic fact that during thin film growth lattice relaxation involves generation of dislocations whose Burgers vectors correspond to missing or extra planes, rather than lattice constants. In the DME framework, the conventional lattice matching epitaxy (LME) becomes a special case where matching of lattice constants results from matching of lattice planes with a relatively small misfit of less than 7-8%. In large lattice mismatch systems, epitaxial growth of thin films is possible by matching of domains where integral multiples of lattice planes match across the interface. The work done in my doctoral study is divided into two main segments, (a) Growth of layered nanostructures and (b) growth of nanostructured composite thin films. The three systems studied under the first segment are (1) Growth of epitaxial self-aligned insulating films on metals (Cu) and its integration with Si (100). (2) Growth and integration of LSMO with Si (100). (3) Growth of Si on Ni substrates (highly textured) with TiN as a buffer layer. The heterostructures studied under the second part are (1) Role of Self-assembled Gold Nanodots in Improving the Electrical and Optical Characteristics of Zinc Oxide Films and (2) Growth of high quality epitaxial ZnO-Pt Nanocomposite and ZnO/Pt, Nanolayer Structures on Sapphire (0001). The epitaxial growth of these

  4. Optical Characterization of Magnetism in Magnetic/Nonmagnetic Heterostructures

    NASA Astrophysics Data System (ADS)

    Fan, Yichun

    This thesis focuses on the study of the static and dynamic magnetic interactions in ferromagnetic/nonmagnetic heterostructures using interface-specific and time-resolved optical techniques. The goal of this thesis is to elucidate the interface exchange coupling, magnetic anisotropy, and coherent spin dynamics in these advanced material systems, crucial to the realization of high performance spintronic devices. First, a pronounced exchange bias (EB) phenomenon is observed in Fe/MgO (001) by magnetic second harmonic generation. The bulk magnetization does not, in marked contrast to typical systems where EB is manifested only in the net magnetization. The magnitude of the exchange bias varies with interface oxygen concentration, suggesting that the pinning layer originates from local FeO nanoclusters formation. Temperature and strain dependent studies show that the lattice mismatch between MgO and Fe enhances the FeO nanoclusters blocking temperature above room temperature. Our results have broad implications for understanding ferromagnet/oxide heterostructures, and provide new insights into the interface spin system and exchange bias. Second, the magnetization reversal process within the first two iron layers at the Fe/GaAs(001) interface is found to be different and independent from the Fe bulk, as measured by magnetic second-harmonic generation and magneto-optical Kerr effect, respectively. The interface magnetization is largely noncollinear from the bulk with an abrupt magnetic boundary and an anisotropic exchange coupling stiffness, weak inter-layer coupling but relatively strong intra-layer stiffness. In contrast, Fe/GaAs(110) exhibits a rigid coupling between interface and bulk magnetization suggesting that the interfacial bonding structure can dramatically change the nature of the exchange coupling. These results are consistent with the observation of noncollinear alignment of interface and bulk magnetization in Fe/MgO(001), and also relevant to other magnetic

  5. Quantum devices in silicon/silicon germanium heterostructures

    NASA Astrophysics Data System (ADS)

    Slinker, Keith A.

    This thesis presents the fabrication and characterization of silicon/silicon-germanium quantum wells, quantum dots, and quantum point contacts. These systems are promising for quantum computing applications due to the long predicted spin lifetimes. In addition, the valley states in Si/SiGe two-dimensional electron gases (2DEGs) are a novel phenomenon in regards to nanostructures, and characterizing these states is also necessary for potential computing applications. However, working with these heterostructures---especially in regards to metal Schottky gating---has proved historically challenging such that single electron transistors had not been achieved at the onset of this research. The first quantum dots in Si/SiGe are presented, defined completely by CF4 reactive ion etch without the use of metal gates. Etch-defined 2DEG side gates are used to modulate the potential of the quantum dot. Results for various metal gating schemes are also presented, culminating in the first Schottky-gated quantum dots in Si/SiGe. Differing from the etch-defined dots, the tunnel junctions of the metal-etch hybrid dot are fully tunable by the voltage applied to the top gates. Hall measurements of multiple heterostructures are presented, providing evidence that many of the challenges associated with gating Si/SiGe can be attributed to undepleted dopants in the supply layer. These dopants screen the top gates but can be detected as a parallel conduction channel in Hall measurements taken at a 2 K. A fully top-gate defined quantum dot was fabricated on an optimized Si/SiGe heterostructure, and the single particle excited states were resolved for the first time in Si/SiGe. Finally, quantum point contacts were defined by metal top gates, and the conduction was mapped out over a large range of magnetic field and voltages on the gates. The positions of the conductance steps are used to extract the valley splitting---a quantity that had been measured in a bulk 2DEG but not in a nanostructure

  6. Controlling electronic structure through epitaxial strain in ZnSe/ZnTe nano-heterostructures

    SciTech Connect

    Yadav, S. K. E-mail: yadav.satyesh@gmail.com; Sharma, V.; Ramprasad, R.

    2015-07-07

    Using first-principles computations, we study the effect of epitaxial strains on electronic structure variations across ZnSe/ZnTe nano-heterostructures. Epitaxial strains of various types are modeled using pseudomorphic ZnSe/ZnTe heterostructures. We find that a wide range of band gaps (spanning the visible solar spectrum) and band offsets (0–1.5 eV) is accessible across the heterostructures in a controllable manner via reasonable levels of epitaxial strain. In addition to quantum confinement effects, strain in ZnSe/ZnTe heterostructures may thus be viewed as a powerful degree of freedom that can enable the rational design of optoelectronic devices.

  7. TOPICAL REVIEW Ionic conductivity in oxide heterostructures: the role of interfaces

    NASA Astrophysics Data System (ADS)

    Fabbri, Emiliana; Pergolesi, Daniele; Traversa, Enrico

    2010-10-01

    Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

  8. ZnO@CdS Core-Shell Heterostructures: Fabrication, Enhanced Photocatalytic, and Photoelectrochemical Performance

    NASA Astrophysics Data System (ADS)

    Ding, Meng; Yao, Nannan; Wang, Chenggang; Huang, Jinzhao; Shao, Minghui; Zhang, Shouwei; Li, Ping; Deng, Xiaolong; Xu, Xijin

    2016-04-01

    ZnO nanorods and ZnO@CdS heterostructures have been fabricated on carbon fiber cloth substrates via hydrothermal and electrochemical deposition. Their photocatalytic properties were investigated by measuring the degradation of methylene blue under ultraviolet light irradiation. The result illustrated that the photodegradation efficiency of ZnO@CdS heterostructures was better than that of pure ZnO nanorods, in which the rate constants were about 0.04629 and 0.02617 min-1. Furthermore, the photocurrent of ZnO@CdS heterostructures achieved 102 times enhancement than pure ZnO nanorods, indicating that more free carriers could be generated and transferred in ZnO@CdS heterostructures, which could be responsible for the increased photocatalytic performance.

  9. Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

    SciTech Connect

    Picraux, Samuel T; Dayeh, Shadi A

    2010-01-01

    Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

  10. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman; Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H.; Loubychev, Dmitri; Liu, Amy; Fastenau, Joel; Lindemuth, Jeff

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5× lower effective mass for s-InSb compared to s-Ge quantum well at 1.9 × 10{sup 12} cm{sup –2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  11. Probing interlayer interactions in WS2 -graphene van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Chung, Ting Fung; Yuan, Long; Huang, Libai; Chen, Yong P.

    Two-dimensional crystals based van der Waals coupled heterostructures are of interest owing to their potential applications for flexible and transparent electronics and optoelectronics. The interaction between the 2D layered crystals at the interfaces of these heterostructures is crucial in determining the overall performance and is strongly affected by contamination and interfacial strain. We have fabricated heterostructures consisting of atomically thin exfoliated WS2 and chemical-vapor-deposited (CVD) graphene, and studied the interaction and coupling between the WS2 and graphene using atomic force microscopy (AFM), Raman spectroscopy and femtosecond transient absorption measurement (TAM). Information from Raman-active phonon modes allows us to estimate charge doping in graphene and interfacial strain on the crystals. Spatial imaging probed by TAM can be correlated to the heterostructure surface morphology measured by AFM and Raman maps of graphene and WS2, showing how the interlayer coupling alters exciton decay dynamics quantitatively.

  12. ZnO@CdS Core-Shell Heterostructures: Fabrication, Enhanced Photocatalytic, and Photoelectrochemical Performance.

    PubMed

    Ding, Meng; Yao, Nannan; Wang, Chenggang; Huang, Jinzhao; Shao, Minghui; Zhang, Shouwei; Li, Ping; Deng, Xiaolong; Xu, Xijin

    2016-12-01

    ZnO nanorods and ZnO@CdS heterostructures have been fabricated on carbon fiber cloth substrates via hydrothermal and electrochemical deposition. Their photocatalytic properties were investigated by measuring the degradation of methylene blue under ultraviolet light irradiation. The result illustrated that the photodegradation efficiency of ZnO@CdS heterostructures was better than that of pure ZnO nanorods, in which the rate constants were about 0.04629 and 0.02617 min(-1). Furthermore, the photocurrent of ZnO@CdS heterostructures achieved 10(2) times enhancement than pure ZnO nanorods, indicating that more free carriers could be generated and transferred in ZnO@CdS heterostructures, which could be responsible for the increased photocatalytic performance. PMID:27090656

  13. Understanding the synergistic effect of WO3-BiVO4 heterostructures by impedance spectroscopy.

    PubMed

    Shi, Xinjian; Herraiz-Cardona, Isaac; Bertoluzzi, Luca; Lopez-Varo, Pilar; Bisquert, Juan; Park, Jong Hyeok; Gimenez, Sixto

    2016-04-01

    WO3-BiVO4 n-n heterostructures have demonstrated remarkable performance in photoelectrochemical water splitting due to the synergistic effect between the individual components. Although the enhanced functional capabilities of this system have been widely reported, in-depth mechanistic studies explaining the carrier dynamics of this heterostructure are limited. The main goal is to provide rational design strategies for further optimization as well as to extend these strategies to different candidate systems for solar fuel production. In the present study, we perform systematic optoelectronic and photoelectrochemical characterization to understand the carrier dynamics of the system and develop a simple physical model to highlight the importance of the selective contacts to minimize bulk recombination in this heterostructure. Our results collectively indicate that while BiVO4 is responsible for the enhanced optical properties, WO3 controls the transport properties of the heterostructured WO3-BiVO4 system, leading to reduced bulk recombination. PMID:26975634

  14. Graphene encapsulated gold nanoparticle-quantum dot heterostructures and their electrochemical characterization

    NASA Astrophysics Data System (ADS)

    Li, Yuan; Chopra, Nitin

    2015-07-01

    A simple technique for patterning multilayer graphene shell encapsulated gold nanoparticles (GNPs) on the silicon substrate and their further surface decoration with semiconducting quantum dots (QDs) is reported. This leads to the fabrication of a novel silicon electrode decorated with GNP-QD hybrids or heterostructures. The morphology, structure, and composition of the GNPs and GNP-QD heterostructures were evaluated using microscopic and spectroscopic techniques. The heterostructures decorated silicon electrode was also evaluated for the electronic and electrochemical properties. The results showed that the electrical characteristics of the silicon substrate were significantly improved by decorating with GNPs and quantum dots. Furthermore, GNP-QD heterostructure electrode was observed to show significantly increased electrochemical charge transfer activity.

  15. Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching

    NASA Astrophysics Data System (ADS)

    Özçelik, V. Ongun; Azadani, Javad G.; Yang, Ce; Koester, Steven J.; Low, Tony

    2016-07-01

    We present a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II, and III heterostructures, an enticing possibility being atomic heterostructures where the constituent monolayers have band edges at the zone center, i.e., Γ valley. Our study, which includes the group IV and III-V compound monolayer materials, group V elemental monolayer materials, transition-metal dichalcogenides, and transition-metal trichalcogenides, reveals that almost half of these materials have conduction and/or valence band edges residing at the zone center. Using first-principles density functional calculations, we present the type of the heterostructure for 903 different possible combinations of these 2D materials which establishes a periodic table of heterostructures.

  16. Revealing the planar chemistry of two-dimensional heterostructures at the atomic level

    NASA Astrophysics Data System (ADS)

    Chou, Harry; Ismach, Ariel; Ghosh, Rudresh; Ruoff, Rodney S.; Dolocan, Andrei

    2015-06-01

    Two-dimensional (2D) atomic crystals and their heterostructures are an intense area of study owing to their unique properties that result from structural planar confinement. Intrinsically, the performance of a planar vertical device is linked to the quality of its 2D components and their interfaces, therefore requiring characterization tools that can reveal both its planar chemistry and morphology. Here, we propose a characterization methodology combining (micro-) Raman spectroscopy, atomic force microscopy and time-of-flight secondary ion mass spectrometry to provide structural information, morphology and planar chemical composition at virtually the atomic level, aimed specifically at studying 2D vertical heterostructures. As an example system, a graphene-on-h-BN heterostructure is analysed to reveal, with an unprecedented level of detail, the subtle chemistry and interactions within its layer structure that can be assigned to specific fabrication steps. Such detailed chemical information is of crucial importance for the complete integration of 2D heterostructures into functional devices.

  17. SPELEEM Studies on the Electronic Structure of MoS2/Graphene Heterostructure

    NASA Astrophysics Data System (ADS)

    Jin, Wencan; Yeh, Po-Chun; Zaki, Nader; Chenet, Daniel; Arefe, Ghidewon; Hao, Yufeng; Sala, Alessandro; Mentes, Tevfik; Locatelli, Andrea; Hone, James; Osgood, Richard; Columbia University Collaboration; Elettra Sincrotrone Trieste Collaboration

    2015-03-01

    Two-dimensional layered materials have been realized through the use of van der Waals heterostructures composed of weakly interacting layers. Among them, MoS2/graphene heterostructures can combine the advantages of high carrier mobility in graphene with the direct band gap of MoS2, which leads to potential applications in nanoelectronic devices with various functionalities. In this work, we study the influence of interlayer twist angle on the electronic structure of a MoS2/graphene heterostructure using Spectroscopic Photoemission and Low Energy Electron Microscopy (SPELEEM) system. MoS2/graphene heterostructures are prepared by transferring chemical-vapor-deposition (CVD)-grown monolayer MoS2 on top of CVD-grown graphene. Twist angles are characterized using the micro-LEED and the electronic structures are directly measured using micro-ARPES.

  18. Diffusion-Mediated Synthesis of MoS2/WS2 Lateral Heterostructures.

    PubMed

    Bogaert, Kevin; Liu, Song; Chesin, Jordan; Titow, Denis; Gradečak, Silvija; Garaj, Slaven

    2016-08-10

    Controlled growth of two-dimensional transition metal dichalcogenide (TMD) lateral heterostructures would enable on-demand tuning of electronic and optoelectronic properties in this new class of materials. Prior to this work, compositional modulations in lateral TMD heterostructures have been considered to depend solely on the growth chronology. We show that in-plane diffusion can play a significant role in the chemical vapor deposition of MoS2/WS2 lateral heterostructures leading to a variety of nontrivial structures whose composition does not necessarily follow the growth order. Optical, structural, and compositional studies of TMD crystals captured at different growth temperatures and in different diffusion stages suggest that compositional mixing versus segregation are favored at high and low growth temperatures, respectively. The observed diffusion mechanism will expand the realm of possible lateral heterostructures, particularly ones that cannot be synthesized using traditional methods. PMID:27438807

  19. Freestanding van der Waals heterostructures of graphene and transition metal dichalcogenides.

    PubMed

    Azizi, Amin; Eichfeld, Sarah; Geschwind, Gayle; Zhang, Kehao; Jiang, Bin; Mukherjee, Debangshu; Hossain, Lorraine; Piasecki, Aleksander F; Kabius, Bernd; Robinson, Joshua A; Alem, Nasim

    2015-05-26

    Vertical stacking of two-dimensional (2D) crystals has recently attracted substantial interest due to unique properties and potential applications they can introduce. However, little is known about their microstructure because fabrication of the 2D heterostructures on a rigid substrate limits one's ability to directly study their atomic and chemical structures using electron microscopy. This study demonstrates a unique approach to create atomically thin freestanding van der Waals heterostructures-WSe2/graphene and MoS2/graphene-as ideal model systems to investigate the nucleation and growth mechanisms in heterostructures. In this study, we use transmission electron microscopy (TEM) imaging and diffraction to show epitaxial growth of the freestanding WSe2/graphene heterostructure, while no epitaxy is maintained in the MoS2/graphene heterostructure. Ultra-high-resolution aberration-corrected scanning transmission electron microscopy (STEM) shows growth of monolayer WSe2 and MoS2 triangles on graphene membranes and reveals their edge morphology and crystallinity. Photoluminescence measurements indicate a significant quenching of the photoluminescence response for the transition metal dichalcogenides on freestanding graphene, compared to those on a rigid substrate, such as sapphire and epitaxial graphene. Using a combination of (S)TEM imaging and electron diffraction analysis, this study also reveals the significant role of defects on the heterostructure growth. The direct growth technique applied here enables us to investigate the heterostructure nucleation and growth mechanisms at the atomic level without sample handling and transfer. Importantly, this approach can be utilized to study a wide spectrum of van der Waals heterostructures. PMID:25885122

  20. Femtosecond control of electric currents in metallic ferromagnetic heterostructures.

    PubMed

    Huisman, T J; Mikhaylovskiy, R V; Costa, J D; Freimuth, F; Paz, E; Ventura, J; Freitas, P P; Blügel, S; Mokrousov, Y; Rasing, Th; Kimel, A V

    2016-05-01

    The idea to use not only the charge but also the spin of electrons in the operation of electronic devices has led to the development of spintronics, causing a revolution in how information is stored and processed. A novel advancement would be to develop ultrafast spintronics using femtosecond laser pulses. Employing terahertz (10(12) Hz) emission spectroscopy and exploiting the spin-orbit interaction, we demonstrate the optical generation of electric photocurrents in metallic ferromagnetic heterostructures at the femtosecond timescale. The direction of the photocurrent is controlled by the helicity of the circularly polarized light. These results open up new opportunities for realizing spintronics in the unprecedented terahertz regime and provide new insights in all-optical control of magnetism. PMID:26854566

  1. Femtosecond control of electric currents in metallic ferromagnetic heterostructures

    NASA Astrophysics Data System (ADS)

    Huisman, T. J.; Mikhaylovskiy, R. V.; Costa, J. D.; Freimuth, F.; Paz, E.; Ventura, J.; Freitas, P. P.; Blügel, S.; Mokrousov, Y.; Rasing, Th.; Kimel, A. V.

    2016-05-01

    The idea to use not only the charge but also the spin of electrons in the operation of electronic devices has led to the development of spintronics, causing a revolution in how information is stored and processed. A novel advancement would be to develop ultrafast spintronics using femtosecond laser pulses. Employing terahertz (1012 Hz) emission spectroscopy and exploiting the spin–orbit interaction, we demonstrate the optical generation of electric photocurrents in metallic ferromagnetic heterostructures at the femtosecond timescale. The direction of the photocurrent is controlled by the helicity of the circularly polarized light. These results open up new opportunities for realizing spintronics in the unprecedented terahertz regime and provide new insights in all-optical control of magnetism.

  2. Catalysis with two-dimensional materials and their heterostructures

    NASA Astrophysics Data System (ADS)

    Deng, Dehui; Novoselov, K. S.; Fu, Qiang; Zheng, Nanfeng; Tian, Zhongqun; Bao, Xinhe

    2016-03-01

    Graphene and other 2D atomic crystals are of considerable interest in catalysis because of their unique structural and electronic properties. Over the past decade, the materials have been used in a variety of reactions, including the oxygen reduction reaction, water splitting and CO2 activation, and have been shown to exhibit a range of catalytic mechanisms. Here, we review recent advances in the use of graphene and other 2D materials in catalytic applications, focusing in particular on the catalytic activity of heterogeneous systems such as van der Waals heterostructures (stacks of several 2D crystals). We discuss the advantages of these materials for catalysis and the different routes available to tune their electronic states and active sites. We also explore the future opportunities of these catalytic materials and the challenges they face in terms of both fundamental understanding and the development of industrial applications.

  3. Tunneling and Transport in Clean Ferromagnet-Superconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Wu, Chien-Te; Valls, Oriol; Halterman, Klaus

    2014-03-01

    We study charge and spin transport in clean Ferromagnet (F)-Superconductor (S) layered structures. By combining a transfer matrix method with a numerical self-consistent solution of the Bogoliubov-de Gennes (BdG) equations, we compute the spin dependent tunneling conductance in F-F-S trilayers in a range of exchange fields and layer thicknesses. In particular, we investigate the dependence of the tunneling conductance on the angle α between the magnetizations in two F layers. We find a variety of non-monotonic and switching behaviors in these heterostructures. We also present results for charge and spin transport in S-F-F-S Josephson junctions. C.-T. Wu and O. T. Valls are supported in part by IARPA under Grant No. N66001-12-1-2023. C.-T. Wu is also supported by the University of Minnesota's Doctoral Dissertation Fellowship.

  4. Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure

    PubMed Central

    Wahler, Martin; Homonnay, Nico; Richter, Tim; Müller, Alexander; Eisenschmidt, Christian; Fuhrmann, Bodo; Schmidt, Georg

    2016-01-01

    We present spin pumping and inverse spin Hall effect (ISHE) in an epitaxial complex oxide heterostructure. Ferromagnetic La0.7Sr0.3MnO3 (LSMO) is used as a source of spin pumping while the spin sink exhibiting the ISHE consists of SrRuO3 (SRO). SRO is a ferromagnetic oxide with metallic conductivity, however, with a Curie temperature (TC) of 155 K, thus well below room temperature. This choice allows to perform the experiment above and below TC of the SRO and to demonstrate that SRO not only shows an ISHE of a magnitude comparable to Pt (though with opposite sign) in its non magnetic state but also exhibits a finite ISHE even 50 K below TC. PMID:27346793

  5. Inelastic vertical tunneling in graphene-based heterostructures

    NASA Astrophysics Data System (ADS)

    de La Barrera, Sergio; Feenstra, Randall

    2015-03-01

    Lateral momentum conservation of tunneling states in graphene / hexagonal boron nitride / graphene heterostructures causes intriguing resonant behavior and negative differential resistance. We explain this phenomenon in terms of a simple model which includes electrostatic gating, rotational alignment between graphene layers, elastic scattering, and inelastic tunneling effects for both monolayer and bilayer graphene. We highlight recent experimental efforts to observe these effects in fabricated devices and compare with theory to validate our theoretical model. In order to improve future fabrication, we discuss disorder mechanisms, the differences between monolayer and bilayer graphene configurations, and the critical parameters which govern the characteristics of these devices. This work was supported in part by the Center for Low Energy Systems Technology (LEAST), one of the six SRC STARnet Centers, sponsored by MARCO and DARPA.

  6. Resonant tunnelling diodes based on graphene/h-BN heterostructure

    NASA Astrophysics Data System (ADS)

    Nguyen, V. Hung; Mazzamuto, F.; Bournel, A.; Dollfus, P.

    2012-08-01

    In this work, we propose a resonant tunnelling diode (RTD) based on a double-barrier graphene/boron nitride (BN) heterostructure as a device suitable to take advantage of the elaboration of atomic sheets containing different domains of BN and C phases within a hexagonal lattice. The device operation and performance are investigated by means of a self-consistent solution within the non-equilibrium Green's function formalism on a tight-binding Hamiltonian. This RTD exhibits a negative differential conductance effect, which involves the resonant tunnelling through both the electron and hole bound states in the graphene quantum well. It is shown that the peak-to-valley ratio reaches a value of ˜4 at room temperature even for zero bandgap and can be higher than 10 when a finite gap opens in the graphene channel.

  7. Catalysis with two-dimensional materials and their heterostructures.

    PubMed

    Deng, Dehui; Novoselov, K S; Fu, Qiang; Zheng, Nanfeng; Tian, Zhongqun; Bao, Xinhe

    2016-03-01

    Graphene and other 2D atomic crystals are of considerable interest in catalysis because of their unique structural and electronic properties. Over the past decade, the materials have been used in a variety of reactions, including the oxygen reduction reaction, water splitting and CO2 activation, and have been shown to exhibit a range of catalytic mechanisms. Here, we review recent advances in the use of graphene and other 2D materials in catalytic applications, focusing in particular on the catalytic activity of heterogeneous systems such as van der Waals heterostructures (stacks of several 2D crystals). We discuss the advantages of these materials for catalysis and the different routes available to tune their electronic states and active sites. We also explore the future opportunities of these catalytic materials and the challenges they face in terms of both fundamental understanding and the development of industrial applications. PMID:26936816

  8. Layer Resolved Imaging of Magnetic Domain Motion in Epitaxial Heterostructures

    NASA Astrophysics Data System (ADS)

    Zohar, Sioan; Choi, Yongseong; Love, David; Mansell, Rhodri; Barnes, Crispin; Keavney, David; Rosenberg, Richard

    We use X-ray Excited Luminescence Microscopy (XELM) to image the elemental and layer resolved magnetic domain structure of an epitaxial Fe/Cr wedge/Co heterostructure in the presence of large magnetic fields. The observed magnetic domains exhibit several unique behaviors that depend on the Cr thickness (tCr) modulated interlayer exchange coupling (IEC) strength. For Cr thickness tCr??1.5?nm, strongly coupled parallel Co-Fe reversal and weakly coupled layer independent reversal are observed, respectively. The transition between these two reversal mechanisms for 0.34?

  9. Analysis of energy states in modulation doped multiquantum well heterostructures

    NASA Technical Reports Server (NTRS)

    Ji, G.; Henderson, T.; Peng, C. K.; Huang, D.; Morkoc, H.

    1990-01-01

    A precise and effective numerical procedure to model the band diagram of modulation doped multiquantum well heterostructures is presented. This method is based on a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. It can be used rather easily in any arbitrary modulation-doped structure. In addition to confined energy subbands, the unconfined states can be calculated as well. Examples on realistic device structures are given to demonstrate capabilities of this procedure. The numerical results are in good agreement with experiments. With the aid of this method the transitions involving both the confined and unconfined conduction subbands in a modulation doped AlGaAs/GaAs superlattice, and in a strained layer InGaAs/GaAs superlattice are identified. These results represent the first observation of unconfined transitions in modulation doped multiquantum well structures.

  10. Robust electromagnetic absorption by graphene/polymer heterostructures

    NASA Astrophysics Data System (ADS)

    Lobet, Michaël; Reckinger, Nicolas; Henrard, Luc; Lambin, Philippe

    2015-07-01

    Polymer/graphene heterostructures present good shielding efficiency against GHz electromagnetic perturbations. Theory and experiments demonstrate that there is an optimum number of graphene planes, separated by thin polymer spacers, leading to maximum absorption for millimeter waves Batrakov et al (2014 Sci. Rep. 4 7191). Here, electrodynamics of ideal polymer/graphene multilayered material is first approached with a well-adapted continued-fraction formalism. In a second stage, rigorous coupled wave analysis is used to account for the presence of defects in graphene that are typical of samples produced by chemical vapor deposition, namely microscopic holes, microscopic dots (embryos of a second layer) and grain boundaries. It is shown that the optimum absorbance of graphene/polymer multilayers does not weaken to the first order in defect concentration. This finding testifies to the robustness of the shielding efficiency of the proposed absorption device.

  11. Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness

    SciTech Connect

    Wang Cong; Jin Kuijuan; Zhao Ruiqiang; Lu Huibin; Guo Haizhong; Ge Chen; He Meng; Wang Can; Yang Guozhen

    2011-05-02

    One order larger photovoltage is obtained with critical thicknesses of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} films in both kinds of heterostructures of La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/SrTiO{sub 3} (0.8 wt % Nb-doped) and La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/Si fabricated at various oxygen pressures. Our self-consistent calculation reveals that the critical thickness of the La{sub 0.9}Sr{sub 0.1}MnO{sub 3} film with the ultimate value of photovoltage is just the thickness of the depletion layer of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} in both heterojunctions, respectively.

  12. Polarization-induced resistive switching behaviors in complex oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Wu, Lei; Zhang, Chao; Dong, Chunhui; Jia, Chenglong; Jiang, Changjun; Xue, Desheng

    2015-09-01

    Complex oxide heterostructures are fabricated by growing La0.67Ca0.33MnO3 films on ferroelectric 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (011) single-crystal substrates. The nonvolatile or pulsed resistive switching behaviors induced by an electric field are achieved simultaneously. Further analyses indicate that the different resistive switching behaviors are resulted from co-control of piezostrain and polarization current effects. With decreasing in-plane read current from 0.1 mA to 0.001 mA, the polarization current effect gradually begins to play a more important role than the piezostrain effect. Consequently, the nonvolatile resistive switching behavior is converted to pulse resistive switching behavior. The results further enhance the application of complex oxides in multifunctional memory devices.

  13. Observation of Interlayer Phonons in Transition Metal Dichalcogenide Heterostructures

    NASA Astrophysics Data System (ADS)

    He, Rui; Ye, Zhipeng; Ji, Chao; Means-Shively, Casie; Anderson, Heidi; Kidd, Tim; Chiu, Kuan-Chang; Chou, Cheng-Tse; Wu, Jenn-Ming; Lee, Yi-Hsien; Andersen, Trond; Lui, Chun Hung

    Interlayer phonon modes in transition metal dichalcogenide (TMD) heterostructures are observed for the first time. We measured the low-frequency Raman response of MoS2/WSe2 and MoSe2/MoS2 heterobilayers. We discovered a distinct Raman mode (30 - 35 cm-1) that cannot be found in any individual monolayers. By comparing with Raman spectra of Bernal bilayer (2L) MoS2, 2L MoSe2 and 2L WSe2, we identified the new Raman mode as the layer breathing vibration arising from the vertical displacement of the two TMD layers. The layer breathing mode (LBM) only emerges in bilayer regions with atomically close layer-layer proximity and clean interface. In addition, the LBM frequency exhibits noticeable dependence on the rotational angle between the two TMD layers, which implies a change of interlayer separation and interlayer coupling strength with the layer stacking.

  14. Surfactant effects on GaAs-Ge heterostructures

    NASA Astrophysics Data System (ADS)

    Karlina, L. B.; Vlasov, A. S.; Ber, B. Y.; Kazanthev, D. Yu.; Marukhina, E. P.

    2013-10-01

    A study of the effect of isoelectronic surfactants (In and P) on the photoluminescence and photovoltaic characteristics of GaAs-Ge heterostructures is presented. The surfactants were introduced into the structure by simultaneous post-growth diffusion. A GaAs photoluminescence spectra analysis was performed via a layer-by-layer etching procedure. It is shown that the effect of the surfactants is observed over a wide concentration range from 3×1017 to 1×1020 cm-3. The effects of the In and P passivation of nonradiative recombination centers are observed. A p-n junction was formed via phosphorus diffusion. PV conversion efficiency of 3.2% for the 900-1840 nm wavelength region has been registered under 40-400x concentrated sunlight (AM1.5D low-AOD).

  15. Rational synthesis of heterostructured nanoparticles with morphology control.

    SciTech Connect

    Wang, C.; Tian, W.; Ding, Y.; Ma, Y.-Q.; Wang, Z. L.; Markovic, N.; Stamenkovic, V.; Daimon, H.; Sun, S.; Materials Science Division; Brown Univ.; Nanjing Univ.; Georgia Inst. of Tech.; Hitachi Maxell, Ltd.

    2010-01-01

    Rational synthesis of Pt-Au{sub n} nanoparticles (NPs) has been achieved by overgrowing Au on Pt with n, the number of Pt-Au heterojunctions in each particle, controlled from 1 to 4, and the corresponding NPs in pear-, peanut-, or clover-like morphology. Monte Carlo simulation reveals that the morphology control can be correlated to a thermodynamic equilibrium of the Au coherence energy, the overall particle surface energy, and the heterogeneous Pt-Au interfacial energy in the composite system, which is manipulated by the seeding particle size and solvent polarity. The developed synthetic strategy together with the provided fundamental understanding of heterogeneous nucleation and heterostructure growth could have great potential toward the rational synthesis of composite nanomaterials with morphology control for advanced catalytic and other functional applications.

  16. Biaxial compressive strain engineering in graphene/boron nitride heterostructures.

    PubMed

    Pan, Wei; Xiao, Jianliang; Zhu, Junwei; Yu, Chenxi; Zhang, Gang; Ni, Zhenhua; Watanabe, K; Taniguchi, T; Shi, Yi; Wang, Xinran

    2012-01-01

    Strain engineered graphene has been predicted to show many interesting physics and device applications. Here we study biaxial compressive strain in graphene/hexagonal boron nitride heterostructures after thermal cycling to high temperatures likely due to their thermal expansion coefficient mismatch. The appearance of sub-micron self-supporting bubbles indicates that the strain is spatially inhomogeneous. Finite element modeling suggests that the strain is concentrated on the edges with regular nano-scale wrinkles, which could be a playground for strain engineering in graphene. Raman spectroscopy and mapping is employed to quantitatively probe the magnitude and distribution of strain. From the temperature-dependent shifts of Raman G and 2D peaks, we estimate the TEC of graphene from room temperature to above 1000K for the first time. PMID:23189242

  17. Homogenization limit for a multiband effective mass model in heterostructures

    SciTech Connect

    Morandi, O.

    2014-06-15

    We study the homogenization limit of a multiband model that describes the quantum mechanical motion of an electron in a quasi-periodic crystal. In this approach, the distance among the atoms that constitute the material (lattice parameter) is considered a small quantity. Our model include the description of materials with variable chemical composition, intergrowth compounds, and heterostructures. We derive the effective multiband evolution system in the framework of the kp approach. We study the well posedness of the mathematical problem. We compare the effective mass model with the standard kp models for uniform and non-uniforms crystals. We show that in the limit of vanishing lattice parameter, the particle density obtained by the effective mass model, converges to the exact probability density of the particle.

  18. Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures

    PubMed Central

    Hu, Xiaohui; Kou, Liangzhi; Sun, Litao

    2016-01-01

    The direct band gap of monolayer semiconducting transition-metal dichalcogenides (STMDs) enables a host of new optical and electrical properties. However, bilayer STMDs are indirect band gap semiconductors, which limits its applicability for high-efficiency optoelectronic devices. Here, we report that the direct band gap can be achieved in bilayer MoSe2-WSe2 lateral heterostructures by alternating stacking orders. Specifically, when Se atoms from opposite layers are stacked directly on top of each other, AA and A’B stacked heterostructures show weaker interlayer coupling, larger interlayer distance and direct band gap. Whereas, when Se atoms from opposite layers are staggered, AA’, AB and AB’ stacked heterostructures exhibit stronger interlayer coupling, shorter interlayer distance and indirect band gap. Thus, the direct/indirect band gap can be controllable in bilayer MoSe2-WSe2 lateral heterostructures. In addition, the calculated sliding barriers indicate that the stacking orders of bilayer MoSe2-WSe2 lateral heterostructures can be easily formed by sliding one layer with respect to the other. The novel direct band gap in bilayer MoSe2-WSe2 lateral heterostructures provides possible application for high-efficiency optoelectronic devices. The results also show that the stacking order is an effective strategy to induce and tune the band gap of layered STMDs. PMID:27528196

  19. Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures.

    PubMed

    Hu, Xiaohui; Kou, Liangzhi; Sun, Litao

    2016-01-01

    The direct band gap of monolayer semiconducting transition-metal dichalcogenides (STMDs) enables a host of new optical and electrical properties. However, bilayer STMDs are indirect band gap semiconductors, which limits its applicability for high-efficiency optoelectronic devices. Here, we report that the direct band gap can be achieved in bilayer MoSe2-WSe2 lateral heterostructures by alternating stacking orders. Specifically, when Se atoms from opposite layers are stacked directly on top of each other, AA and A'B stacked heterostructures show weaker interlayer coupling, larger interlayer distance and direct band gap. Whereas, when Se atoms from opposite layers are staggered, AA', AB and AB' stacked heterostructures exhibit stronger interlayer coupling, shorter interlayer distance and indirect band gap. Thus, the direct/indirect band gap can be controllable in bilayer MoSe2-WSe2 lateral heterostructures. In addition, the calculated sliding barriers indicate that the stacking orders of bilayer MoSe2-WSe2 lateral heterostructures can be easily formed by sliding one layer with respect to the other. The novel direct band gap in bilayer MoSe2-WSe2 lateral heterostructures provides possible application for high-efficiency optoelectronic devices. The results also show that the stacking order is an effective strategy to induce and tune the band gap of layered STMDs. PMID:27528196

  20. Engineering the Morphology and Configuration of Ternary Heterostructures for Improving Their Photocatalytic Activity.

    PubMed

    Li, Kui; Chen, Rong; Li, Shun-Li; Xie, Shuai-Lei; Cao, Xue-Li; Dong, Long-Zhang; Bao, Jian-Chun; Lan, Ya-Qian

    2016-02-01

    Heteronanomaterials composed of suitable semiconductors enable the direct conversion from solar power into clean and renewable energy. Ternary heterostructures with appropriate configuration and morphology possess rich and varied properties, especially for improving the photocatalytic activity and stability synchronously. However, suitable ternary heterostructure prototypes and facile while effective strategy for modulating their morphology and configuration are still scarce. Herein, various ternary ZnS-CdS-Zn(1-x)Cd(x)S heterostructures with tunable morphology (0 to 2 D) and semiconductor configurations (randomly distributed, interface mediated, and quantum dots sensitized core@shell heterostructures) were facilely synthesized via one-pot hydrothermal method resulting from the different molecular structures of the amine solvents. Semiconductor morphology, especially configuration of the ternary heterostructure, shows dramatic effect on their photocatalytic activity. The CdS sensitized porous Zn(1-x)CdxS@ZnS core@shell takes full advantage of ZnS, Zn(1-x)Cd(x)S and CdS and shows the maximal photocatalytic H2-production rate of 100.2 mmol/h/g and excellent stability over 30 h. This study provides some guidelines for the design and synthesis of high-performance ternary heterostructure via modulation of semiconductor configuration and morphology using one-pot method. PMID:26835705

  1. Investigation of optimized end-bonding magnetoelectric heterostructure for sensitive magnetic field sensor.

    PubMed

    Lu, Caijiang; Xu, Changbao; Wang, Lei; Gao, Jipu; Gui, Junguo; Lin, Chenghui

    2014-11-01

    This paper reports an optimized end-bonding magnetoelectric (ME) heterostructure FeCuNbSiB-PZT-FeCuNbSiB (FPF) for sensitive magnetic field sensor. The heterostructure is made by attaching magnetostrictive Fe73.5Cu1Nb3Si13.5B9 (FeCuNbSiB) foils at the free ends of piezoelectric Pb(Zr1-x,Tix)O3 (PZT) plates. Due to the structural advantages, the FPF has ∼3.12 times larger resonance voltage coefficient (αME,r) than traditional FeCuNbSiB/PZT laminate. And compared with the Metglas-PZT-Metglas heterostructure, the FPF heterostructure has stronger ME responses for the excellent magnetic characteristics of FeCuNbSiB. In experiments, the FPF heterostructure is optimal designed through adjusting the thickness of PZT plate (tp) and the length of FeCuNbSiB foil (L). The results demonstrate that the maximum αME,r of 662.1 (V/cm Oe) is observed at 13 Oe DC bias magnetic field when L = 15 mm and tp = 0.6 mm. Based on the giant ME coupling, the DC magnetic field sensitivity for the optimized FPF heterostructure is 3.89 nT at resonant frequency. These results are very promising for the cheap room-temperature magnetic field sensing technology. PMID:25430140

  2. Synthesis and Characterizations of Two-Dimensional Atomic Layers and Their Heterostructures

    NASA Astrophysics Data System (ADS)

    Lee, Yi-Hsien

    2015-03-01

    Monolayers of van der Waals (vdw) materials, including graphene, h-BN, and MoS2, have been highlighted regarding both scientific and industrial aspects due to novel physical phenomenon inherited from the reduced dimensionality. Layered transition metal dichalcogenides (TMD) atomic layers, being considered as the thinnest semiconductor, exhibit great potential for advanced nano-devices. Monolayer in the class of offered a burgeoning field in fundamental physics, energy harvesting, electronics and optoelectronics. Recently, atomically thin heterostructures of TMD monolayer with various geometrical and energy band alignments are expected to be the key materials for next generation flexible optoelectronics. The individual TMD monolayers can be adjoined vertically or laterally to construct diverse heterostructures which are difficult to reach with the laborious pick up-and-transfer method of the exfoliated flakes. The ability to produce copious amounts of high quality layered heterostructures on diverse surfaces is highly desirable but it has remained a challenging issue. Here, we have achieved a direct synthesis of various heterostructures of monolayer TMDs. The synthesis was performed using ambient-pressure CVD with aromatic molecules as seeding promoters. We discuss possible growth behaviors, and we examine the symmetry and the interface of these heterostructures using optical analysis and atomic-resolution scanning TEM. Our method offers a controllable synthesis of to obtain high-quality heterostructures of TMD atomic layers with diverse interface geometry.

  3. Epitaxial growth and heterostructure synthesis by ion beam deposition (IBD)

    SciTech Connect

    Herbots, N.; Appleton, B.R.; Noggle, T.S.; Pennycook, S.J.; Zuhr, R.A.; Zehner, D.M.

    1986-01-01

    The synthesis of heterostructures and the possibility of low-temperature epitaxy by direct ion beam deposition at low energies (10 to 200 eV) were investigated both theoretically and experimentally. Monte-Carlo simulations of ion-solid interactions were used to study collision processes during IBD and have led to a qualitative understanding of the physical parameters involved in the deposition process. /sup 30/Si and /sup 74/Ge were deposited on Si(100) and Ge(100) directly from mass- and energy-analyzed ion beams. Ge/Si multilayers with interfaces as sharp as 0.35 nm were formed by IBD at 65 eV. Reactive ion etching with 20 eV /sup 37/Cl was used to clean Si surfaces in-situ at 625 and 870/sup 0/K. IBD epitaxy was then observed between 625 and 870/sup 0/K with ion energies ranging from 10 to 65 eV. /sup 30/Si films on Si(100) grown at 700/sup 0/K exhibited an ion channeling minimum yield of 4.8%. The dopant species in the substrate affected the occurrence of silicon epitaxy below 870/sup 0/K. Cross-section transmission electron microscopy (TEM) showed that dislocation loops were formed within the substrate during heated deposition, at a depth larger than 40 nm below the bombarded region. A uniaxial lattice expansion normal to the surface was measured in IBD crystals by x-ray Bragg reflection profiling and ion channeling. It is concluded that epitaxial layers and heterostructures can be formed at low temperature by IBD.

  4. Antiferroelectric Materials, Applications and Recent Progress on Multiferroic Heterostructures

    NASA Astrophysics Data System (ADS)

    Zhou, Ziyao; Yang, Qu; Liu, Ming; Zhang, Zhiguo; Zhang, Xinyang; Sun, Dazhi; Nan, Tianxiang; Sun, Nianxiang; Chen, Xing

    2015-04-01

    Antiferroelectric (AFE) materials with adjacent dipoles oriented in antiparallel directions have a double polarization hysteresis loops. An electric field (E-field)-induced AFE-ferroelectric (FE) phase transition takes place in such materials, leading to a large lattice strain and energy change. The high dielectric constant and the distinct phase transition in AFE materials provide great opportunities for the realization of energy storage devices like super-capacitors and energy conversion devices such as AFE MEMS applications. Lots of work has been done in this field since 60-70 s. Recently, the strain tuning of the spin, charge and orbital orderings and their interactions in complex oxides and multiferroic heterostructures have received great attention. In these systems, a single control parameter of lattice strain is used to control lattice-spin, lattice-phonon, and lattice-charge interactions and tailor properties or create a transition between distinct magnetic/electronic phases. Due to the large strain/stress arising from the phase transition, AFE materials are great candidates for integrating with ferromagnetic (FM) materials to realize in situ manipulation of magnetism and lattice-ordered parameters by voltage. In this paper, we introduce the AFE material and it's applications shortly and then review the recent progress in AFEs based on multiferroic heterostructures. These new multiferroic materials could pave a new way towards next generation light, compact, fast and energy efficient voltage tunable RF/microwave, spintronic and memory devices promising approaches to in situ manipulation of lattice-coupled order parameters is to grow epitaxial oxide films on FE/ferroelastic substrates.

  5. Thermoelectric properties of IV-VI-based heterostructures and superlattices

    NASA Astrophysics Data System (ADS)

    Borges, P. D.; Petersen, J. E.; Scolfaro, L.; Leite Alves, H. W.; Myers, T. H.

    2015-07-01

    Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<1018 cm-3). A large value of ZT|| (parallel to the growth direction) of 3.0 is predicted for n=4.7×1018 cm-3 and T=700 K, whereas ZTp (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×1017 cm-3. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed.

  6. Moiré pattern as a magnifying glass for strain and dislocations in van der Waals heterostructures.

    PubMed

    Cosma, Diana A; Wallbank, John R; Cheianov, Vadim; Fal'ko, Vladimir I

    2014-01-01

    We consider the role of deformations in graphene heterostructures with hexagonal crystals (including strain, wrinkles and dislocations) on the geometrical properties of moiré patterns characteristic for a pair of two incommensurate misaligned isostructural crystals. By employing a phenomenological theory to describe generic moiré perturbations in van der Waals heterostructures of graphene and hexagonal crystals we investigate the electronic properties of such heterostructures. PMID:25465904

  7. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy

    PubMed Central

    Zuo, Zheng; Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zheng, Jian-Guo; Liu, Jianlin

    2015-01-01

    Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°. PMID:26442629

  8. Rapid Construction of ZnO@ZIF-8 Heterostructures with Size-Selective Photocatalysis Properties.

    PubMed

    Wang, Xianbiao; Liu, Jin; Leong, Sookwan; Lin, Xiaocheng; Wei, Jing; Kong, Biao; Xu, Yongfei; Low, Ze-Xian; Yao, Jianfeng; Wang, Huanting

    2016-04-13

    To selectively remove heavy metal from dye solution, inspired by the unique pore structure of ZIF-8, we developed a synthetic strategy for rapid construction of ZnO@ZIF-8 heterostructure photocatalyst for selective reduction of Cr(VI) between Cr(VI) and methylene blue (MB). In particular, ZnO@ZIF-8 core-shell heterostructures were prepared by in situ ZIF-8 crystal growth using ZnO colloidal spheres as template and zinc source within 8-60 min. The shell of the resulting ZnO@ZIF-8 core-shell heterostructure with a uniform thickness of around 30 nm is composed of ZIF-8 crystal polyhedrons. The concentration of organic ligand 2-methylimidazole (Hmim) was found to be crucial for the formation of ZnO@ZIF-8 core-shell heterostructures. Different structures, ZnO@ZIF-8 core-shell spheres and separate ZIF-8 polyhedrons could be formed by altering Hmim concentration, which significantly influences the balance between rate of Zn(2+) release from ZnO and coordinate rate. Importantly, such ZnO@ZIF-8 core-shell heterostructures exhibit size-selective photocatalysis properties due to selective adsorption and permeation effect of ZIF-8 shell. The as-synthesized ZnO@ZIF-8 heterostructures exhibited enhanced selective reduction of Cr(VI) between Cr(VI) and MB, which may find application in the dye industry. This work not only provides a general route for rapid fabrication of such core-shell heterostructures but also illustrates a strategy for selectively enhanced photocatalysis performance by utilizing adsorption and size selectivity of ZIF-8 shell. PMID:26998617

  9. Probing Transition Metal Dichalcogenide Monolayers and Heterostructures by Optical Spectroscopy and Scanning Tunneling Spectroscopy

    NASA Astrophysics Data System (ADS)

    Hill, Heather M.

    Atomically thin two-dimensional materials, such as graphene and semiconductor transition metal dichalcogenides (TMDCs), exhibit remarkable and desirable optical and electronic properties. This dissertation focuses on the excitonic properties of monolayer TMDCs taken first in isolation and then in contact with another material. We begin with a study of the exciton binding energy in two monolayer TMDCs, WS2 and MoS2. We observe excited states of the exciton by two dierent optical spectroscopy techniques: reflectance contrast and photoluminescence excitation (PLE) spectroscopy. We fit a hydrogenic model to the energies associated with the excited states and infer a binding energy, which is an order of magnitude higher than the bulk material. In the second half of this work, we study two types of two-dimensional vertical heterostructures. First, we investigate heterostructures composed of monolayer WS2 partially capped with graphene one to four layers thick. Using reflectance contrast to measure the spectral broadening of the excitonic features, we measure the decrease in the coherence lifetime of the exciton in WS2 due to charge and energy transfer when in contact with graphene. We then compare our results with the exciton lifetime in MoS 2/WS2 and MoSe2/WSe2 heterostructures. In TMDC/TMDC heterostructures, the decrease in exciton lifetime is twice that in WS2/graphene heterostructures and due predominantly to charge transfer between the layers. Finally, we probe the band alignment in MoS2/WS2 heterostructures using scanning tunneling microscopy (STM) and spectroscopy (STS). We confirm the monolayer band gaps and the predicted type II band alignment in the heterostructure. Drawing from all the research presented, we arrive at a favorable conclusion about the viability of TMDC based devices.

  10. Radiation effects on III-V heterostructure devices

    NASA Astrophysics Data System (ADS)

    Jun, Bongim

    The neutron and electron radiation effects in III-V compound semiconductor heterostructure devices are studied in this thesis. Three types of devices investigated are AlGaAs/GaAs high electron mobility transistors (HEMTs), AlGaAs/InGaAs/GaAs heterostructure insulated gate field effect transistors (HIGFETs), and InP/InGaAs/InGaAs single heterojunction bipolar transistors (SHBTs). HEMTs and HIGFETs are primarily investigated for neutron irradiation effects. Detailed optimized processing of HEMT devices is introduced. Numerical as well as analytical models that incorporate radiation-induced degradation effects in HEMTs and HIGFETs are developed. The most prominent radiation effects appearing on both HEMT and HIGFET devices are increase of threshold voltage (VT) and decrease of transconductance (gm) as radiation dose increases. These effects are responsible for drain current degradation under given bias conditions after irradiation. From our experimental neutron irradiation study and our theoretical models, we concluded that threshold voltage increase is due to the radiation-induced acceptor-like (negatively charged) traps in the GaAs channel region removing carriers. The mobility degradation in the channel is responsible for gm decrease. Series resistance increase is also related to carrier removal and mobility degradation. Traps introduced in the GaAs region affect the device performance more than the traps in the AlGaAs doped region. V T and gm of HIGFET devices are less affected by neutron radiation than they are in HEMTs. This difference is attributed to different shapes of the quantum well in the two devices. The main effects of electron and neutron irradiation of SHBTs are decrease of collector current (IC), decrease of common-emitter DC gain, increase of the collector output conductance (DeltaI C/DeltaVCE), and increase of collector-collector offset voltage. The decrease of breakdown voltage of reverse biased base-emitter junction diode is responsible for

  11. Shape control of multi-material heterostructures for catalytic applications

    NASA Astrophysics Data System (ADS)

    Habas, Susan Ellen

    Shape control of nanomaterials has become increasingly important, as many of their physical and chemical properties are highly dependent on morphology. A tremendous amount of effort has been spent in attempt to control these properties through manipulation of size, composition, and shape. Nanocrystal shape control for both single- and multiple-material systems, however, remains largely empirical and still presents a major challenge. In this dissertation, new methods are described for the rational synthetic design of heterostructures with controlled morphology which is essential for tailoring the catalytic properties of these multi-material systems. Catalytic activity and selectivity are governed by the nature of the catalyst surface, making shaped nanocrystals ideal substrates for understanding the influence of surface structure on heterogeneous catalysis at the nanoscale. First, synthetic methods were developed to produce catalytically active platinum nanocrystals with control over their shape and surface chemistry. Initially, the focus was on the removal of strongly-bound surface stabilizing molecules by ligand exchange to give catalytically clean surfaces. However, the presence of foreign ions used as a shape control agent to produce cubic, cuboctahedral, and octahedrally shaped nanocrystals was found to inhibit catalytic activity. In response, a method was developed for the shape control of uniform platinum nanoparticles stabilized by weakly interacting alkylammonium ions in the absence of foreign metal ions, which showed improved activity for ethylene hydrogenation. The next section describes the application of these highly-faceted platinum nanocrystals as nucleation centers for overgrowth of a secondary metal to obtain shape-controlled heterostructures. Seeded growth allows for the use of the surface structure and corresponding chemical identity of a well-defined seed to control nucleation and growth of another material. Cubic platinum seeds can direct the

  12. Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures

    SciTech Connect

    Marmalyuk, Aleksandr A; Ladugin, M A; Yarotskaya, I V; Panarin, V A; Mikaelyan, G T

    2012-01-31

    Traditional (in the AlGaAs/GaAs system) and phosphorus-compensated (in the AlGaAs/AlGaPAs/GaAs system) laser heterostructures emitting at a wavelength of 850 nm are grown by MOVPE and studied. Laser diode bars are fabricated and their output characteristics are studied. The method used to grow heterolayers allowed us to control (minimise) mechanical stresses in the AlGaPAs/GaAs laser heterostructure, which made it possible to keep its curvature at the level of the initial curvature of the substrate. It is shown that the use of a compensated AlGaPAs/GaAs heterostructure improves the linear distribution of emitting elements in the near field of laser diode arrays and allows the power - current characteristic to retain its slope at high pump currents owing to a uniform contact of all emitting elements with the heat sink. The radius of curvature of the grown compensated heterostructures turns out to be smaller than that of traditional heterostructures.

  13. Non-radiative relaxation and rectification behavior of metal/semiconductor tetrapod heterostructures

    SciTech Connect

    Kanta Haldar, Krishna; Kundu, Simanta; Patra, Amitava

    2014-02-10

    The metal-semiconductor hetero-structures have recently emerged as functional materials for their potential applications in the areas of photonic, optoelectronic, and other fields. Here, we discuss the structural characterization of Au/CdSe tetrapod hetero-structures by using high-resolution transmission electron microscope, high angle annular dark field-scanning transmission electron microscopic, and X-ray diffraction. The blue shifting of the plasmonic band and red shifting of the excitonic band suggest a strong surface plasmon-exciton interaction between Au and CdSe in Au/CdSe tetrapod heterostructure. A significant photoluminescence quenching (83.4%) of CdSe nanorod (NR) is observed in the presence of Au nanoparticle in Au/CdSe tetrapod heterostructure. The radiative and nonradiative decay rates of CdSe nanorods are found to be modified in Au/CdSe tetrapod structures and the nonradiative rate changes from 1.91 × 10{sup 7} s{sup −1} to 9.33 × 10{sup 9} s{sup −1} for CdSe NR to Au/CdSe tetrapod structure, respectively. Current-voltage characteristics of Au/CdSe heterostructure exhibit the rectification property with a threshold voltage of about 0.85 V and the rectifying ratio is 140 which can open up avenues for developing challenging devices.

  14. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, Han; Bang, Junhyeok; Sun, Yiyang; Liang, Liangbo; West, Damien; Meunier, Vincent; Zhang, Shengbai

    The success of van der Waals (vdW) heterostructures made of graphene, metal dichalcogenides, and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that vdW heterostructues can exhibit ultra-fast charge transfer despite the weak binding of these heterostructures. Using time-dependent density functional theory molecular dynamics, we find that the collective motion of excitons at the interface lead to plasma oscillations associated with optical excitation. Furthermore, instability of these oscillations explain the rapid charge transfer across the interface and are shown to be a general feature of vdW heterostructures provided they have a critical minimum dipole coupling. Application to the MoS2/WS2 heterostructure yields good agreement with experiment, indicating near complete charge transfer within a timescale of 100 fs.

  15. Heterostructured electrode with concentration gradient shell for highly efficient oxygen reduction at low temperature

    PubMed Central

    Zhou, Wei; Liang, Fengli; Shao, Zongping; Chen, Jiuling; Zhu, Zhonghua

    2011-01-01

    Heterostructures of oxides have been widely investigated in optical, catalytic and electrochemical applications, because the heterostructured interfaces exhibit pronouncedly different transport, charge, and reactivity characteristics compared to the bulk of the oxides. Here we fabricated a three-dimensional (3D) heterostructured electrode with a concentration gradient shell. The concentration gradient shell with the composition of Ba0.5-xSr0.5-yCo0.8Fe0.2O3-δ (BSCF-D) was prepared by simply treating porous Ba0.5Sr0.5Co0.8Fe0.2O3-δ (BSCF) backbone with microwave-plasma. Electrochemical impedance spectroscopy reveals that the oxygen surface exchange rate of the BSCF-D is enhanced by ~250% that of the pristine BSCF due to the appearance of the shell. The heterostructured electrode shows an interfacial resistance as low as 0.148 Ω cm2 at 550°C and an unchanged electrochemical performance after heating treatment for 200 h. This method offers potential to prepare heterostructured oxides not only for electrochemical devices but also for many other applications that use ceramic materials. PMID:22355670

  16. Direct Growth of MoS₂/h-BN Heterostructures via a Sulfide-Resistant Alloy.

    PubMed

    Fu, Lei; Sun, Yangyong; Wu, Nian; Mendes, Rafael G; Chen, Linfeng; Xu, Zhen; Zhang, Tao; Rümmeli, Mark H; Rellinghaus, Bernd; Pohl, Darius; Zhuang, Lin; Fu, Lei

    2016-02-23

    Improved properties arise in transition metal dichalcogenide (TMDC) materials when they are stacked onto insulating hexagonal boron nitride (h-BN). Therefore, the scalable fabrication of TMDCs/h-BN heterostructures by direct chemical vapor deposition (CVD) growth is highly desirable. Unfortunately, to achieve this experimentally is challenging. Ideal substrates for h-BN growth, such as Ni, become sulfides during the synthesis process. This leads to the decomposition of the pregrown h-BN film, and thus no TMDCs/h-BN heterostructure forms. Here, we report a thoroughly direct CVD approach to obtain TMDCs/h-BN vertical heterostructures without any intermediate transfer steps. This is attributed to the use of a nickel-based alloy with excellent sulfide-resistant properties and a high catalytic activity for h-BN growth. The strategy enables the direct growth of single-crystal MoS2 grains of up to 200 μm(2) on h-BN, which is approximately 1 order of magnitude larger than that in previous reports. The direct band gap of our grown single-layer MoS2 on h-BN is 1.85 eV, which is quite close to that for free-standing exfoliated equivalents. This strategy is not limited to MoS2-based heterostructures and so allows the fabrication of a variety of TMDCs/h-BN heterostructures, suggesting the technique has promise for nanoelectronics and optoelectronic applications. PMID:26756578

  17. Stacking order dependent mechanical properties of graphene/MoS{sub 2} bilayer and trilayer heterostructures

    SciTech Connect

    Elder, Robert M. E-mail: mahesh.neupane.ctr@mail.mil; Neupane, Mahesh R. E-mail: mahesh.neupane.ctr@mail.mil; Chantawansri, Tanya L.

    2015-08-17

    Transition metal dichalcogenides (TMDC) such as molybdenum disulfide (MoS{sub 2}) are two-dimensional materials that show promise for flexible electronics and piezoelectric applications, but their weak mechanical strength is a barrier to practical use. In this work, we perform nanoindentation simulations using atomistic molecular dynamics to study the mechanical properties of heterostructures formed by combining MoS{sub 2} with graphene. We consider both bi- and tri-layer heterostructures formed with MoS{sub 2} either supported or encapsulated by graphene. Mechanical properties, such as Young's modulus, bending modulus, ultimate tensile strength, and fracture strain, are extracted from nanoindentation simulations and compared to the monolayer and homogeneous bilayer systems. We observed that the heterostructures, regardless of the stacking order, are mechanically more robust than the mono- and bi-layer MoS{sub 2}, mainly due to the mechanical reinforcement provided by the graphene layer. The magnitudes of ultimate strength and fracture strain are similar for both the bi- and tri-layer heterostructures, but substantially larger than either the mono- and bi-layer MoS{sub 2}. Our results demonstrate the potential of graphene-based heterostructures to improve the mechanical properties of TMDC materials.

  18. Strain-Induced Electronic Structure Changes in Stacked van der Waals Heterostructures.

    PubMed

    He, Yongmin; Yang, Yang; Zhang, Zhuhua; Gong, Yongji; Zhou, Wu; Hu, Zhili; Ye, Gonglan; Zhang, Xiang; Bianco, Elisabeth; Lei, Sidong; Jin, Zehua; Zou, Xiaolong; Yang, Yingchao; Zhang, Yuan; Xie, Erqing; Lou, Jun; Yakobson, Boris; Vajtai, Robert; Li, Bo; Ajayan, Pulickel

    2016-05-11

    Vertically stacked van der Waals heterostructures composed of compositionally different two-dimensional atomic layers give rise to interesting properties due to substantial interactions between the layers. However, these interactions can be easily obscured by the twisting of atomic layers or cross-contamination introduced by transfer processes, rendering their experimental demonstration challenging. Here, we explore the electronic structure and its strain dependence of stacked MoSe2/WSe2 heterostructures directly synthesized by chemical vapor deposition, which unambiguously reveal strong electronic coupling between the atomic layers. The direct and indirect band gaps (1.48 and 1.28 eV) of the heterostructures are measured to be lower than the band gaps of individual MoSe2 (1.50 eV) and WSe2 (1.60 eV) layers. Photoluminescence measurements further show that both the direct and indirect band gaps undergo redshifts with applied tensile strain to the heterostructures, with the change of the indirect gap being particularly more sensitive to strain. This demonstration of strain engineering in van der Waals heterostructures opens a new route toward fabricating flexible electronics. PMID:27120401

  19. Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes.

    PubMed

    Jia, S; Sun, H D; Du, J H; Zhang, Z K; Zhang, D D; Ma, L P; Chen, J S; Ma, D G; Cheng, H M; Ren, W C

    2016-05-19

    The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A(-1) and 98.2 lm W(-1), respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability. PMID:27153523

  20. Semiconductor-halfmetal-metal transition and magnetism of bilayer graphene nanoribbons/hexagonal boron nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Ilyasov, V. V.; Meshi, B. C.; Nguyen, V. C.; Ershov, I. V.; Nguyen, D. C.

    2014-12-01

    The paper presents the results of ab initio study of electronic structure modulation and edge magnetism in the antiferromagnetic (AF) bilayer zigzag graphene nanoribbons (AF-BZGNR)/hexagonal boron nitride (h-BN(0001)) semiconductor heterostructure induced with transverse external electric field (Eext) and nanomechanical compression (extension), performed within the framework of the density functional theory using Grimme's DFT(PBE)-D2 scheme. For the first time we established critical values of Eext and interlayer distance in the bilayer for the BZGNR/h-BN(0001) heterostructure providing for semiconductor-halfmetal-metal phase transition for one of the electron spin configurations. We discovered the effect of preserved local magnetic moment (0.3μB) of edge carbon atoms of the lower (buffer) graphene nanoribbon during nanomechanical uniaxial compression (or extension) of the BZGNR/h-BN(0001) semiconductor heterostructure. It has been demonstrated that magnetic properties of the AF-BZGNR/h-BN(0001) semiconductor heterostructure can be controlled using Eext. In particular, the local magnetic moment of edge carbon atoms decreases by 10% at a critical value of the positive potential. We have established that local magnetic moments and band gaps can be altered in a wide range using nanomechanical uniaxial compression and Eext, thus making the AF-BZGNR/h-BN(0001) semiconductor heterostructure potentially promising for nanosensors, spin filters, and spintronics applications.

  1. Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures.

    PubMed

    Hong, Xiaoping; Kim, Jonghwan; Shi, Su-Fei; Zhang, Yu; Jin, Chenhao; Sun, Yinghui; Tongay, Sefaattin; Wu, Junqiao; Zhang, Yanfeng; Wang, Feng

    2014-09-01

    Van der Waals heterostructures have recently emerged as a new class of materials, where quantum coupling between stacked atomically thin two-dimensional layers, including graphene, hexagonal-boron nitride and transition-metal dichalcogenides (MX2), give rise to fascinating new phenomena. MX2 heterostructures are particularly exciting for novel optoelectronic and photovoltaic applications, because two-dimensional MX2 monolayers can have an optical bandgap in the near-infrared to visible spectral range and exhibit extremely strong light-matter interactions. Theory predicts that many stacked MX2 heterostructures form type II semiconductor heterojunctions that facilitate efficient electron-hole separation for light detection and harvesting. Here, we report the first experimental observation of ultrafast charge transfer in photoexcited MoS2/WS2 heterostructures using both photoluminescence mapping and femtosecond pump-probe spectroscopy. We show that hole transfer from the MoS2 layer to the WS2 layer takes place within 50 fs after optical excitation, a remarkable rate for van der Waals coupled two-dimensional layers. Such ultrafast charge transfer in van der Waals heterostructures can enable novel two-dimensional devices for optoelectronics and light harvesting. PMID:25150718

  2. Heterostructures and infrared emitters with compressed InAsSb layers

    SciTech Connect

    Kurtz, S.R.; Biefeld, R.M.

    1995-03-01

    An overview is presented of strained InAsSb heterostructures and infrared emitters. InAsSb/InGaAs strained-layer superlattices (SLS) and InAsSb quantum wells were characterized using magneto-photoluminescence and compared with unstrained InAsSb and InAs alloys. In heterostructures with biaxially compressed InAsSb, large quantum confinement energies were observed, and the holes exhibited a decrease in effective mass, approaching that of the electrons. This study demonstrates that the electrons and holes in the InAsSb heterostructures are confined in the InAsSb layers, and the band offsets are type I. A large increase in the Auger-1 threshold energy should accompany the strain-induced change in valence-band symmetry of the InAsSb layers. Correspondingly, the InAsSb heterostructures display high radiative efficiencies and increased activation energies for nonradiative recombination compared with the unstrained alloys. LEDs and L-mrs with InAsSb heterostructure active regions are described. InAsSb/InGaAs SLS LEDs operating at 300K at wavelengths {le} 5 pm have been demonstrated. Optically pumped InAsSb/InGaAs SLS lasers, with InPSb cladding, had a maximum operating temperature of 100K.

  3. Universal chitosan-assisted synthesis of Ag-including heterostructured nanocrystals for label-free in situ SERS monitoring.

    PubMed

    Cai, Kai; Xiao, Xiaoyan; Zhang, Huan; Lu, Zhicheng; Liu, Jiawei; Li, Qin; Liu, Chen; Foda, Mohamed F; Han, Heyou

    2015-12-01

    A universal chitosan-assisted method was developed to synthesize various Ag-including heterostructured nanocrystals, in which chelation probably plays a vital role. The as-prepared Ag/Pd heterostructured nanocrystals show outstanding properties when used as bifunctional nanocomposites in label-free in situ SERS monitoring of Pd-catalyzed reaction. PMID:26399897

  4. Conduction properties of metal/organic monolayer/semiconductor heterostructures

    SciTech Connect

    Li, D.; Bishop, A.; Gim, Y.; Shi, X.B.; Fitzsimmons, M.R.; Jia, Q.X.

    1998-11-01

    We have fabricated and characterized rectifying devices made of metal/organic monolayer/semiconductor heterostructures. The devices consist of an organic barrier layer sandwiched between an aluminum (Al) metal contact and a {ital p}-type Si semiconductor. The barrier materials were chosen from three types of self-assembled monolayers (SAMs) with different electronic properties: (1) wide-band gap poly(diallydimethyl ammonium) chloride (PDDA), (2) narrow-band gap PDDA/NiPc (nickel phthalocyanine tetrasulfonate), and (3) donor type PDDA/PPP (poly {ital p}-quaterphenylene-disulfonic-dicarboxylic acid). From current{endash}voltage (I{endash}V) measurements at room temperature, we have found the turn-on voltage of the devices can be tuned by varying the structure, hence electronic properties, of the organic monolayers, and that there exists a power-law dependence of {ital I} on V, I{proportional_to}V{sup {alpha}}, with the exponent {alpha}=2.2 for PDDA, 2.7 for PDDA/NiPc, and 1.44 for PDDA/PPP as the barrier layer, respectively. Our results imply that the transport properties are controlled by both the electronic properties of the SAMs and those of the metal and semiconductor, as indicated by the power-law dependence of the I{endash}V characteristics. {copyright} {ital 1998 American Institute of Physics.}

  5. Tunneling through localized barrier states in superconducting heterostructures

    NASA Astrophysics Data System (ADS)

    Shaternik, V. E.; Shapovalov, A. P.; Suvorov, A. V.; Skoryk, N. A.; Belogolovskii, M. A.

    2016-05-01

    Thin film heterostructures composed of superconducting electrodes (molybdenum rhenium alloy) and a nanoscale silicon layer doped with tungsten, have been designed and experimentally studied. The current-voltage characteristics of junctions exhibiting local maxima of the current against the background of abrupt current increases for the first time, were measured in the voltage range of -800 to 800 mV, at temperatures of 4.2-8 K. The positions of these singularities, which are symmetrical with respect to zero voltage, varied from sample to sample within the range of 40-300 mV. With increasing temperature, they became blurred and completely vanished with the disappearance of superconductivity in the electrodes. The nature of the observed singularities is associated with the properties of electron tunneling through the impurity states localized in the semiconducting barrier. The use of a superconducting electrode enhances the interaction of the localized electron with the conduction electrons thanks to the root divergence in the density of electron states of a superconductor.

  6. Graphene/MoS2 heterostructures for optoelectronics applications

    NASA Astrophysics Data System (ADS)

    Han, P.; Wong, Q.; El Fatimy, A.; Ishigami, M.; Barbara, P.

    Graphene and other atomically thin materials can be combined to make novel ultra-thin devices that are suitable for flexible substrates. However, fabricating these heterostructures is a challenge. Most previous work was done by stacking monolayers exfoliated from bulk materials , which is a very time-consuming, low-yield method. Large-area monolayer can also be grown by CVD and stacked, as demonstrated by the successful transfer of graphene on as-grown MoS2, yet the optical properties of some materials like MoS2 may be degraded by the processing required to detach them from the growth substrate, thereby limiting options in device architecture. Here we develop a method to transfer, align and stack large flakes and films of MoS2 and graphene after transferring both from the growth substrate onto an arbitrary substrate. The Raman and photoluminescence measurements show that the optical properties of the stacked monolayers are not degraded, making this method viable for fabrication of optoelectronics devices. . Work supported by the U.S. ONR (Award: N000141310865) and the NSF-REU (DMR-1358978).

  7. Giant Perpendicular Magnetic Anisotropy of Graphene-Co Heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, Hongxin; Hallal, Ali; Chshiev, Mairbek; Spintec theory Team

    We report strongly enhanced perpendicular anisotropy (PMA) of Co films by graphene coating via ab-initio calculations. The results show that graphene coating can improve the surface anisotropy of Co film up to twice large of the bare Co case and keep the film effective anisotropy being out-of-plane till 25 Å of Co, in agreement with experiments. Our layer resolved analysis reveals that PMA of Co (Co/Gr) films mainly originates from the adjacent 3 Co layers close to surface (interface) and can be strongly influenced by graphene. Furthermore, orbital hybridization analysis uncovers the origin of the PMA enhancement which is due to graphene-Co bonding causing an inversion of Co 3dz 2 and 3dx 2 - y 2 Bloch states close to Fermi level. Finally, we propose to design Co-graphene heterostructures which possess a linearly increasing surface anisotropy and a constant effective anisotropy. These findings point towards a possible engineering graphene-Co junctions with giant anisotropy, which stands as a hallmark for future spintronic information processing. This work was supported by European Graphene Flagship, European Union-funded STREP project CONCEPT-GRAPHENE, French ANR Projects NANOSIM-GRAPHENE and NMGEM

  8. Anomalous conductivity noise in gapped bilayer graphene heterostructure

    NASA Astrophysics Data System (ADS)

    Aamir, Mohammed Ali; Karnatak, Paritosh; Sai, T. Phanindra; Ghosh, Arindam

    Bilayer graphene has unique electronic properties - it has a tunable band gap and also, valley symmetry and pseudospin degree of freedom like its single layer counterpart. In this work, we present a study of conductance fluctuations in dual gated bilayer graphene heterostructures by varying the Fermi energy and the band gap independently. At a fixed band gap, we find that the conductance fluctuations obtained by Fermi energy ensemble sampling increase rapidly as the Fermi energy is tuned to charge neutrality point (CNP) whereas the time-dependent conductance fluctuations diminish rapidly. This discrepancy is completely absent at higher number densities, where the transport is expected to be through the 2D bulk of the bilayer system. This observation indicates that near the CNP, electrical transport is highly sensitive to Fermi energy, but becomes progressively immune to time-varying disorder. A possible explanation may involve transport via edge states which becomes the dominant conduction mechanism when the bilayer graphene is gapped and Fermi energy is situated close to the CNP, thereby causing a dimensional crossover from 2D to 1D transport. Our experiment outlines a possible experimental protocol to probe intrinsic topological states in gapped bilayer graphene.

  9. Microscopic theory of superconductor-ferroelectric heterostructures: Interface charge redistribution

    NASA Astrophysics Data System (ADS)

    Pavlenko, N.; Schwabl, F.

    2003-03-01

    We present a theory of periodic ferroelectric-superconductor (FE-S) heterostructures containing ferroelectric layers sandwiched between superconducting planes. We analyze the electronic charge-carrier redistribution at the FE-S interface in the presence of the spontaneous polarization in the ferroelectric layer. On the other hand, we study the influence of the superconductor on the structural dynamics in the ferroelectric layer. The effect of FE-S contacts on the ferroelectrics is found to be crucial leading to a structural transformation from the state with the homogeneous-type polarization to the phase with a set of asymmetric stable polarization domains. FE-S interface phenomena induce a decrease of the temperature of the transition to the symmetric phase with two symmetric (negative and positive) polarization domains. Nevertheless, even above the ferroelectric critical temperature, we find in the ferroelectric layer a stable contact-induced enhanced spontaneous polarization. The domain structure in the symmetric phase appears as the response to the charge-carrier redistribution at the contact with the superconducting subsystem. An increase of the FE-S interface coupling results in a complex nonmonotonic behavior of the superconducting transition temperature and finally, for the strong-coupling regime, in a complete suppression of the superconductivity. The results are expected to be especially important for the analysis of high-temperature cuprate superconductor films grown on perovskite-type ferroelectrics.

  10. Vertical transport in graphene-hexagonal boron nitride heterostructure devices

    PubMed Central

    Bruzzone, Samantha; Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2015-01-01

    Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron carbon nitride (h-BC2N). We find that tunneling through a single barrier exhibit a weak dependence on energy. We also show that in double barriers separated by a graphene layer we do not observe resonant tunneling, but a significant increase of the tunneling probability with respect to a single barrier of thickness equal to the sum of the two barriers. This is due to the fact that the graphene layer acts as an effective phase randomizer, suppressing resonant tunneling and effectively letting a double-barrier structure behave as two single-barriers in series. Finally, we use multiscale simulations to reproduce a current-voltage characteristics resembling that of a resonant tunneling diode, that has been experimentally observed in single barrier structure. The peak current is obtained when there is perfect matching between the densities of states of the cathode and anode graphene regions. PMID:26415656

  11. Vertical transport in graphene-hexagonal boron nitride heterostructure devices.

    PubMed

    Bruzzone, Samantha; Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2015-01-01

    Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron carbon nitride (h-BC2N). We find that tunneling through a single barrier exhibit a weak dependence on energy. We also show that in double barriers separated by a graphene layer we do not observe resonant tunneling, but a significant increase of the tunneling probability with respect to a single barrier of thickness equal to the sum of the two barriers. This is due to the fact that the graphene layer acts as an effective phase randomizer, suppressing resonant tunneling and effectively letting a double-barrier structure behave as two single-barriers in series. Finally, we use multiscale simulations to reproduce a current-voltage characteristics resembling that of a resonant tunneling diode, that has been experimentally observed in single barrier structure. The peak current is obtained when there is perfect matching between the densities of states of the cathode and anode graphene regions. PMID:26415656

  12. Vertical transport in graphene-hexagonal boron nitride heterostructure devices

    NASA Astrophysics Data System (ADS)

    Bruzzone, Samantha; Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2015-09-01

    Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron carbon nitride (h-BC2N). We find that tunneling through a single barrier exhibit a weak dependence on energy. We also show that in double barriers separated by a graphene layer we do not observe resonant tunneling, but a significant increase of the tunneling probability with respect to a single barrier of thickness equal to the sum of the two barriers. This is due to the fact that the graphene layer acts as an effective phase randomizer, suppressing resonant tunneling and effectively letting a double-barrier structure behave as two single-barriers in series. Finally, we use multiscale simulations to reproduce a current-voltage characteristics resembling that of a resonant tunneling diode, that has been experimentally observed in single barrier structure. The peak current is obtained when there is perfect matching between the densities of states of the cathode and anode graphene regions.

  13. Mesoporous Phosphate Heterostructures: Synthesis and Application on Adsorption and Catalysis

    NASA Astrophysics Data System (ADS)

    Moreno-Tost, Ramón; Jiménez-Jiménez, José; Infantes-Molina, Antonia; Cavalcante, Celio L.; Azevedo, Diana C. S.; Soriano, María Dolores; López Nieto, José Manuel; Jiménez-López, Antonio; Rodríguez-Castellón, Enrique

    Porous phosphate heterostructures (PPHs) are solids formed by a layered metal(IV) phosphate expanded with silica galleries obtained by combining the two main strategies for obtaining mesoporous materials [pillared layered structures (PLS') and MCM-41]. The different synthetic pathways for obtaining mesoporous phosphate structures with silica galleries with Zr- or Ti-doped silica, the study of their structural, textural and acid properties, its functionalisation with different organic substances such as propionitrile, 3-aminopropyl triethoxysilane, (3-mercaptopropyl)trimethoxysilane, vinyltrimethoxysilane, phenyltriethoxysilane and 3-(triethoxysilyl)propionitrile are discussed. The preparation of metal-supported catalysts and their application in gas separation, adsorption and catalysis are reviewed. Specifically, the use of Cu- and Fe-exchanged PPH for the adsorption of benzothiophene and the separation of propane/propene is the main application as adsorbent. The hydrotreating of aromatic hydrocarbons using ruthenium-impregnated catalysts via hydrogenation and hydrogenolysis/hydrocracking for the production of clean diesel fuels, the selective catalytic reduction of NO from stationary and mobile sources by using Cu-PPH with 1, 3 and 7 wt% of Cu and the selective oxidation of hydrogen sulphide to sulphur with vanadium-containing PPH are the three catalytic reactions of environmental interest studied.

  14. Photo-thermionic effect in vertical graphene heterostructures

    PubMed Central

    Massicotte, M.; Schmidt, P.; Vialla, F.; Watanabe, K.; Taniguchi, T.; Tielrooij, K. J.; Koppens, F. H. L.

    2016-01-01

    Finding alternative optoelectronic mechanisms that overcome the limitations of conventional semiconductor devices is paramount for detecting and harvesting low-energy photons. A highly promising approach is to drive a current from the thermal energy added to the free-electron bath as a result of light absorption. Successful implementation of this strategy requires a broadband absorber where carriers interact among themselves more strongly than with phonons, as well as energy-selective contacts to extract the excess electronic heat. Here we show that graphene-WSe2-graphene heterostructure devices offer this possibility through the photo-thermionic effect: the absorbed photon energy in graphene is efficiently transferred to the electron bath leading to a thermalized hot carrier distribution. Carriers with energy higher than the Schottky barrier between graphene and WSe2 can be emitted over the barrier, thus creating photocurrent. We experimentally demonstrate that the photo-thermionic effect enables detection of sub-bandgap photons, while being size-scalable, electrically tunable, broadband and ultrafast. PMID:27412308

  15. Sequence of hole resonances in complex oxide heterostructures.

    PubMed

    Smadici, S; Logvenov, G; Bozovic, I; Abbamonte, P

    2014-04-16

    Resonant soft x-ray scattering measurements at the O K edge on Sr2CuO4-ν/La2NiO4+δ (SCO/LNO) complex oxide superlattices show resonances for holes in the two constituent layers, in a sequence of energy levels. The observation of well defined resonances, on a superlattice with layers one unit cell thick, indicates that the resonance energy is largely unaffected by atoms outside a cluster extending half a unit cell along the c axis, consistent with calculations for bulk materials. Comparison to measurements on related superlattices confirms that the order of resonances at the O K edge reflects the order of hole ground-state energies in the heterostructure buried layers. For the SCO/LNO superlattices, the measurements show that the ground-state energies remain different in very thin SCO and LNO layers, which is a contributing factor when considering electronic reconstruction at interfaces, in addition to the areal density of ionic charges in the atomic planes. Different hole energy levels in the SCO/LNO superlattice also imply that holes do not spread into SCO from LNO layers. PMID:24675566

  16. Light Generation and Harvesting in a van der Waals Heterostructure

    PubMed Central

    2014-01-01

    Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of semiconducting transition metal dichalcogenides MoS2 or WSe2 have been proposed as promising channel materials for field-effect transistors. Their high mechanical flexibility, stability, and quality coupled with potentially inexpensive production methods offer potential advantages compared to organic and crystalline bulk semiconductors. Due to quantum mechanical confinement, the band gap in monolayer MoS2 is direct in nature, leading to a strong interaction with light that can be exploited for building phototransistors and ultrasensitive photodetectors. Here, we report on the realization of light-emitting diodes based on vertical heterojunctions composed of n-type monolayer MoS2 and p-type silicon. Careful interface engineering allows us to realize diodes showing rectification and light emission from the entire surface of the heterojunction. Electroluminescence spectra show clear signs of direct excitons related to the optical transitions between the conduction and valence bands. Our p–n diodes can also operate as solar cells, with typical external quantum efficiency exceeding 4%. Our work opens up the way to more sophisticated optoelectronic devices such as lasers and heterostructure solar cells based on hybrids of 2D semiconductors and silicon. PMID:24601517

  17. Photo-thermionic effect in vertical graphene heterostructures

    NASA Astrophysics Data System (ADS)

    Massicotte, M.; Schmidt, P.; Vialla, F.; Watanabe, K.; Taniguchi, T.; Tielrooij, K. J.; Koppens, F. H. L.

    2016-07-01

    Finding alternative optoelectronic mechanisms that overcome the limitations of conventional semiconductor devices is paramount for detecting and harvesting low-energy photons. A highly promising approach is to drive a current from the thermal energy added to the free-electron bath as a result of light absorption. Successful implementation of this strategy requires a broadband absorber where carriers interact among themselves more strongly than with phonons, as well as energy-selective contacts to extract the excess electronic heat. Here we show that graphene-WSe2-graphene heterostructure devices offer this possibility through the photo-thermionic effect: the absorbed photon energy in graphene is efficiently transferred to the electron bath leading to a thermalized hot carrier distribution. Carriers with energy higher than the Schottky barrier between graphene and WSe2 can be emitted over the barrier, thus creating photocurrent. We experimentally demonstrate that the photo-thermionic effect enables detection of sub-bandgap photons, while being size-scalable, electrically tunable, broadband and ultrafast.

  18. Quantum and Ionic Transport Across Superconductor-based Heterostructures

    NASA Astrophysics Data System (ADS)

    Nayfeh, Osama; Dinh, Son; Taylor, Benjamin; de Andrade, Marcio; Swanson, Paul; Offord, Bruce; de Escobar, Anna Leese; Claussen, Stephanie; Kassegne, Sam

    2015-03-01

    We present analysis of quantum and ionic transport across superconductor/barrier/ionic/barrier/superconductor (SBIBS) heterostructures. Calculations for various ionic configurations demonstrate modification of the quantum transport coherence length and energy profile with moderate ionic transport away from the superconductor-barrier interface. The effect of electric field and cryogenic temperature on the stability of the ionic configurations for quantum information state storage is examined. Characterization and analysis of constructed Al and Nb-based device structures are presented. Acknowledgements: We acknowledge the support of the SSC Pacific In-house Laboratory Independent Research Science and Technology Program managed by Dr. Dave Rees, the Naval Innovative Science and Engineering Program managed by Mr. Robin Laird, and the ONR Summer Faculty Research Program. Interactions with Dr. Van Vechten (ONR) and Dr. Manheimer (IARPA) are appreciated. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of SPAWAR or the U.S. Government. Approved for Public Release; distribution is unlimited.

  19. Spin-torque generation in topological insulator based heterostructures

    NASA Astrophysics Data System (ADS)

    Fischer, Mark H.; Vaezi, Abolhassan; Manchon, Aurelien; Kim, Eun-Ah

    2016-03-01

    Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather from spin-Hall physics of the topological-insulator bulk, remains unclear. Here, we explore a mechanism of spin-torque generation purely based on the topological surface states. We consider topological-insulator-based bilayers involving ferromagnetic metal (TI/FM) and magnetically doped topological insulators (TI/mdTI), respectively. By ascribing the key theoretical differences between the two setups to location and number of active surface states, we describe both setups within the same framework of spin diffusion of the nonequilibrium spin density of the topological surface states. For the TI/FM bilayer, we find large spin-torque efficiencies of roughly equal magnitude for both in-plane and out-of-plane spin torques. For the TI/mdTI bilayer, we elucidate the dominance of the spin-transfer-like torque. However, we cannot explain the orders of magnitude enhancement reported. Nevertheless, our model gives an intuitive picture of spin-torque generation in topological-insulator-based bilayers and provides theoretical constraints on spin-torque generation due to topological surface states.

  20. Core-shell upconversion nanoparticle - semiconductor heterostructures for photodynamic therapy.

    PubMed

    Dou, Qing Qing; Rengaramchandran, Adith; Selvan, Subramanian Tamil; Paulmurugan, Ramasamy; Zhang, Yong

    2015-01-01

    Core-shell nanoparticles (CSNPs) with diverse chemical compositions have been attracting greater attention in recent years. However, it has been a challenge to develop CSNPs with different crystal structures due to the lattice mismatch of the nanocrystals. Here we report a rational design of core-shell heterostructure consisting of NaYF4:Yb,Tm upconversion nanoparticle (UCN) as the core and ZnO semiconductor as the shell for potential application in photodynamic therapy (PDT). The core-shell architecture (confirmed by TEM and STEM) enables for improving the loading efficiency of photosensitizer (ZnO) as the semiconductor is directly coated on the UCN core. Importantly, UCN acts as a transducer to sensitize ZnO and trigger the generation of cytotoxic reactive oxygen species (ROS) to induce cancer cell death. We also present a firefly luciferase (FLuc) reporter gene based molecular biosensor (ARE-FLuc) to measure the antioxidant signaling response activated in cells during the release of ROS in response to the exposure of CSNPs under 980 nm NIR light. The breast cancer cells (MDA-MB-231 and 4T1) exposed to CSNPs showed significant release of ROS as measured by aminophenyl fluorescein (APF) and ARE-FLuc luciferase assays, and ~45% cancer cell death as measured by MTT assay, when illuminated with 980 nm NIR light. PMID:25652742

  1. Exciton-polariton condensation in transition metal dichalcogenide bilayer heterostructure

    NASA Astrophysics Data System (ADS)

    Lee, Ki Hoon; Jeong, Jae-Seung; Min, Hongki; Chung, Suk Bum

    For the bilayer heterostructure system in an optical microcavity, the interplay of the Coulomb interaction and the electron-photon coupling can lead to the emergence of quasiparticles consisting of the spatially indirect exciton and cavity photons known as dipolariton, which can form the Bose-Einstein condensate above a threshold density. Additional physics comes into play when each layer of the bilayer system consists of the transition metal dichalcogenide (TMD) monolayer. The TMD monolayer band structure in the low energy spectrum has two valley components with nontrivial Berry phase, which gives rise to a selection rule in the exciton-polariton coupling, e.g. the exciton from one (the other) valley can couple only to the clockwise (counter-clockwise) polarized photon. We investigate possible condensate phases of exciton-polariton in the bilayer TMD microcavity changing relevant parameters such as detuning, excitation density and interlayer distance. This work was supported in part by the Institute for Basic Science of Korea (IBS) under Grant IBS-R009-Y1 and by the National Research Foundation of Korea (NRF) under the Basic Science Research Program Grant No. 2015R1D1A1A01058071.

  2. Coherent Two Photon Production in Superconductor-Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Baireuther, Paul; Vekhter, Ilya; Schmalian, Jörg

    2012-02-01

    Connecting a thin (direct band gap) p-n junction to a superconductor allows Cooper pairs to tunnel into the junction. This leads to an enhancement of the luminescence at the junction via Cooper pair based radiative recombination[1,2], an effect that has recently been observed experimentally[3]. Due to the proximity-induced Cooper pairs in the junction, anomalous photon production related to coherent two photon processes becomes allowed. Using a simple model for direct band gap luminescence we study a superconductor-p-n-superconductor heterostructure where the two photon state depends on the relative phase between the two superconductors. We investigate to what extend the production rate of entangled photons is controlled by the phase difference between the attached superconductors. [1] E. Hanamura, Phys. Stat. Sol. (b) 234, 166 (2002). [2] Y. Asano, I. Suemune, H. Takayanagi, and E. Hanamura, Phys. Rev. Lett. 103, 187001 (2009). [3] I. Suemune, T. Akazaki, K. Tanaka, M. Jo, K. Uesugi, M. Endo1, H. Kumano, E. Hanamura, H. Takayanagi, M. Yamanishi and H. Kan, Jpn. Journ. of Appl. Phys. 45, 9264 (2006).

  3. Core - shell upconversion nanoparticle - semiconductor heterostructures for photodynamic therapy

    NASA Astrophysics Data System (ADS)

    Dou, Qing Qing; Rengaramchandran, Adith; Selvan, Subramanian Tamil; Paulmurugan, Ramasamy; Zhang, Yong

    2015-02-01

    Core-shell nanoparticles (CSNPs) with diverse chemical compositions have been attracting greater attention in recent years. However, it has been a challenge to develop CSNPs with different crystal structures due to the lattice mismatch of the nanocrystals. Here we report a rational design of core-shell heterostructure consisting of NaYF4:Yb,Tm upconversion nanoparticle (UCN) as the core and ZnO semiconductor as the shell for potential application in photodynamic therapy (PDT). The core-shell architecture (confirmed by TEM and STEM) enables for improving the loading efficiency of photosensitizer (ZnO) as the semiconductor is directly coated on the UCN core. Importantly, UCN acts as a transducer to sensitize ZnO and trigger the generation of cytotoxic reactive oxygen species (ROS) to induce cancer cell death. We also present a firefly luciferase (FLuc) reporter gene based molecular biosensor (ARE-FLuc) to measure the antioxidant signaling response activated in cells during the release of ROS in response to the exposure of CSNPs under 980 nm NIR light. The breast cancer cells (MDA-MB-231 and 4T1) exposed to CSNPs showed significant release of ROS as measured by aminophenyl fluorescein (APF) and ARE-FLuc luciferase assays, and ~45% cancer cell death as measured by MTT assay, when illuminated with 980 nm NIR light.

  4. Radiative and interfacial recombination in CdTe heterostructures

    SciTech Connect

    Swartz, C. H. Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H.; Zaunbrecher, K. N.

    2014-12-01

    Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

  5. Development of Novel Two-dimensional Layers, Alloys and Heterostructures

    NASA Astrophysics Data System (ADS)

    Liu, Zheng

    2015-03-01

    The one-atom-think graphene has fantastic properties and attracted tremendous interests in these years, which opens a window towards various two-dimensional (2D) atomic layers. However, making large-size and high-quality 2D layers is still a great challenge. Using chemical vapor deposition (CVD) method, we have successfully synthesized a wide varieties of highly crystalline and large scale 2D atomic layers, including h-BN, metal dichalcogenides e.g. MoS2, WS2, CdS, GaSe and MoSe2 which belong to the family of binary 2D materials. Ternary 2D alloys including BCN and MoS2xSe2 (1 - x) are also prepared and characterized. In addition, synthesis of 2D heterostructures such as vertical and lateral graphene/h-BN, vertical and lateral TMDs are also demonstrated. Complementary to CVD grown 2D layers, 2D single-crystal (bulk) such as Phosphorene (P), WTe2, SnSe2, PtS2, PtSe2, PdSe2, WSe2xTe2 (1 - x), Ta2NiS5andTa2NiSe5 are also prepared by solid reactions. There work provide a better understanding of the atomic layered materials in terms of the synthesis, atomic structure, alloying and their physical properties. Potential applications of these 2D layers e.g. optoelectronic devices, energy device and smart coating have been explored.

  6. Heterostructures for Increased Quantum Efficiency in Nitride LEDs

    SciTech Connect

    Davis, Robert F.

    2010-09-30

    Task 1. Development of an advanced LED simulator useful for the design of efficient nitride-based devices. Simulator will contain graphical interface software that can be used to specify the device structure, the material parameters, the operating conditions and the desired output results. Task 2. Theoretical and experimental investigations regarding the influence on the microstructure, defect concentration, mechanical stress and strain and IQE of controlled changes in the chemistry and process route of deposition of the buffer layer underlying the active region of nitride-based blue- and greenemitting LEDs. Task 3. Theoretical and experimental investigations regarding the influence on the physical properties including polarization and IQE of controlled changes in the geometry, chemistry, defect density, and microstructure of components in the active region of nitride-based blue- and green-emitting LEDs. Task 4. Theoretical and experimental investigations regarding the influence on IQE of novel heterostructure designs to funnel carriers into the active region for enhanced recombination efficiency and elimination of diffusion beyond this region. Task 5. Theoretical and experimental investigations regarding the influence of enhanced p-type doping on the chemical, electrical, and microstructural characteristics of the acceptor-doped layers, the hole injection levels at Ohmic contacts, the specific contact resistivity and the IQE of nitride-based blue- and green-emitting LEDs. Development and optical and electrical characterization of reflective Ohmic contacts to n- and p-type GaN films.

  7. Photo-thermionic effect in vertical graphene heterostructures.

    PubMed

    Massicotte, M; Schmidt, P; Vialla, F; Watanabe, K; Taniguchi, T; Tielrooij, K J; Koppens, F H L

    2016-01-01

    Finding alternative optoelectronic mechanisms that overcome the limitations of conventional semiconductor devices is paramount for detecting and harvesting low-energy photons. A highly promising approach is to drive a current from the thermal energy added to the free-electron bath as a result of light absorption. Successful implementation of this strategy requires a broadband absorber where carriers interact among themselves more strongly than with phonons, as well as energy-selective contacts to extract the excess electronic heat. Here we show that graphene-WSe2-graphene heterostructure devices offer this possibility through the photo-thermionic effect: the absorbed photon energy in graphene is efficiently transferred to the electron bath leading to a thermalized hot carrier distribution. Carriers with energy higher than the Schottky barrier between graphene and WSe2 can be emitted over the barrier, thus creating photocurrent. We experimentally demonstrate that the photo-thermionic effect enables detection of sub-bandgap photons, while being size-scalable, electrically tunable, broadband and ultrafast. PMID:27412308

  8. Magnetoelectroluminescence of organic heterostructures: Analytical theory and spectrally resolved measurements

    DOE PAGESBeta

    Liu, Feilong; Kelley, Megan R.; Crooker, Scott A.; Nie, Wanyi; Mohite, Aditya D.; Ruden, P. Paul; Los Alamos National Lab.; Smith, Darryl L.; Los Alamos National Lab.

    2014-12-22

    The effect of a magnetic field on the electroluminescence of organic light emitting devices originates from the hyperfine interaction between the electron/hole polarons and the hydrogen nuclei of the host molecules. In this paper, we present an analytical theory of magnetoelectroluminescence for organic semiconductors. To be specific, we focus on bilayer heterostructure devices. In the case we are considering, light generation at the interface of the donor and acceptor layers results from the formation and recombination of exciplexes. The spin physics is described by a stochastic Liouville equation for the electron/hole spin density matrix. By finding the steady-state analytical solutionmore » using Bloch-Wangsness-Redfield theory, we explore how the singlet/triplet exciplex ratio is affected by the hyperfine interaction strength and by the external magnetic field. In order to validate the theory, spectrally resolved electroluminescence experiments on BPhen/m-MTDATA devices are analyzed. With increasing emission wavelength, the width of the magnetic field modulation curve of the electroluminescence increases while its depth decreases. Furthermore, these observations are consistent with the model.« less

  9. Magnetoelectroluminescence of organic heterostructures: Analytical theory and spectrally resolved measurements

    SciTech Connect

    Liu, Feilong; Kelley, Megan R.; Crooker, Scott A.; Nie, Wanyi; Mohite, Aditya D.; Ruden, P. Paul; Smith, Darryl L.

    2014-12-22

    The effect of a magnetic field on the electroluminescence of organic light emitting devices originates from the hyperfine interaction between the electron/hole polarons and the hydrogen nuclei of the host molecules. In this paper, we present an analytical theory of magnetoelectroluminescence for organic semiconductors. To be specific, we focus on bilayer heterostructure devices. In the case we are considering, light generation at the interface of the donor and acceptor layers results from the formation and recombination of exciplexes. The spin physics is described by a stochastic Liouville equation for the electron/hole spin density matrix. By finding the steady-state analytical solution using Bloch-Wangsness-Redfield theory, we explore how the singlet/triplet exciplex ratio is affected by the hyperfine interaction strength and by the external magnetic field. In order to validate the theory, spectrally resolved electroluminescence experiments on BPhen/m-MTDATA devices are analyzed. With increasing emission wavelength, the width of the magnetic field modulation curve of the electroluminescence increases while its depth decreases. Furthermore, these observations are consistent with the model.

  10. Heterostructured nanohybrid of zinc oxide-montmorillonite clay.

    PubMed

    Hur, Su Gil; Kim, Tae Woo; Hwang, Seong-Ju; Hwang, Sung-Ho; Yang, Jae Hun; Choy, Jin-Ho

    2006-02-01

    We have synthesized heterostructured zinc oxide-aluminosilicate nanohybrids through a hydrothermal reaction between the colloidal suspension of exfoliated montmorillonite nanosheets and the sol solution of zinc acetate. According to X-ray diffraction, N2 adsorption-desorption isotherm, and field emission-scanning electron microscopic analyses, it was found that the intercalation of zinc oxide nanoparticles expands the basal spacing of the host montmorillonite clay, and the crystallites of the nanohybrids are assembled to form a house-of-cards structure. From UV-vis spectroscopic investigation, it becomes certain that calcined nanohybrid contains two kinds of the zinc oxide species in the interlayer space of host lattice and in mesopores formed by the house-of-cards type stacking of the crystallites. Zn K-edge X-ray absorption near-edge structure/extended X-ray absorption fine structure analyses clearly demonstrate that guest species in the nanohybrids exist as nanocrystalline zinc oxides with wurzite-type structure. PMID:16471722

  11. Interlayer Potential for Graphene/h-BN Heterostructures.

    PubMed

    Leven, Itai; Maaravi, Tal; Azuri, Ido; Kronik, Leeor; Hod, Oded

    2016-06-14

    We present a new force-field potential that describes the interlayer interactions in heterojunctions based on graphene and hexagonal boron nitride (h-BN). The potential consists of a long-range attractive term and a short-range anisotropic repulsive term. Its parameters are calibrated against reference binding and sliding energy profiles for a set of finite dimer systems and the periodic graphene/h-BN bilayer, obtained from density functional theory using a screened-exchange hybrid functional augmented by a many-body dispersion treatment of long-range correlation. Transferability of the parametrization is demonstrated by considering the binding energy of bulk graphene/h-BN alternating stacks. Benchmark calculations for the superlattice formed when relaxing the supported periodic heterogeneous bilayer provide good agreement with both experimental results and previous computational studies. For a free-standing bilayer we predict a highly corrugated relaxed structure. This, in turn, is expected to strongly alter the physical properties of the underlying monolayers. Our results demonstrate the potential of the developed force-field to model the structural, mechanical, tribological, and dynamic properties of layered heterostructures based on graphene and h-BN. PMID:27168429

  12. Dirac Fermions in heterostructures for designer topological phases

    NASA Astrophysics Data System (ADS)

    Feng, Ji

    2014-03-01

    Massless Dirac Fermions are found in graphene and on the surfaces of topological insulators, which are quasiparticles moving at a constant speed independent of its energy as governed by relativistic quantum mechanics. In this talk, I will show, via interfacial orbital design of Dirac states, emergent topological phases can be engineered in artificial heterostructures. As a first example, I will show that a novel class of half semi-metallic Dirac electronic phase emerges at the interface CrO2 with TiO2 in both thin film and superlattice configurations. With four spin-polarized Dirac points in the band structure, this system with simple, non-topological oxides displays spontaneous quantum anomalous Hall effect. In a second example, I will show that the superlattice valley engineering, starting with the SnTe topological mirror insulator, leads to designer topological phases with a remarkably rich phase diagram. JF acknowledges financial support by NSFC Project 11174009, and China 973 Program Projects 2013CB921900 and 2011CBA00109.

  13. What Makes Effective Gating Possible in Two-Dimensional Heterostructures?

    NASA Astrophysics Data System (ADS)

    Zutic, Igor; Lazic, Predrag; Belashchenko, Kirill D.

    Electrostatic gating provides a way to obtain key functionalities in modern electronic devices and to qualitatively alter materials properties. While electrostatic description of such gating gives guidance for related doping effects, inherent quantum properties of gating provide opportunities for intriguing modification of materials and unexplored devices. Using first-principles calculations for Co/bilayer graphene, Co/BN, and Co/benzene, as well as a simple physical model, we show that magnetic heterostructures with two-dimensional layered materials can manifest tunable magnetic proximity effects. van der Waals bonding is identified as a requirement for large electronic structure changes by gating. In particular, the magnitude and sign of spin polarization in physisorbed graphene can be controlled by gating, which is important for spintronic devices. Supported by U.S. ONR Grant N000141310754, U.S. DOE-BES Award DE-SC0004890, NSF DMR-1124601, the Center for NanoFerroic Devices, the Nanoelectronics Research Initiative, and NSF DMR-1308751.

  14. Molecular Beam Epitaxy of Layered Material Superlattices and Heterostructures

    NASA Astrophysics Data System (ADS)

    Vishwanath, Suresh; Liu, Xinyu; Rouvimov, Sergei; Furdyna, Jacek K.; Jena, Debdeep; Xing, Huili Grace

    2014-03-01

    Stacking of various layered materials is being pursued widely to realize various devices and observe novel physics. Mostly, these have been limited to exfoliation and stacking either manually or in solution, where control on rotational alignment or order of stacking is lost. We have demonstrated molecular beam epitaxy (MBE) growth of Bi2Se3/MoSe2 superlatticeand Bi2Se3/MoSe2/SnSe2 heterostructure on sapphire. We have achieved a better control on the order of stacking and number of layers as compared to the solution technique. We have characterized these structures using RHEED, Raman spectroscopy, XPS, AFM, X-ray reflectometry, cross-section (cs) and in-plane (ip) TEM. The rotational alignment is dictated by thermodynamics and is understood using ip-TEM diffraction patterns. Layered growth and long range order is evident from the streaky RHEED pattern. Abrupt change in RHEED pattern, clear demarcation of boundary between layers seen using cs-TEM and observation of Raman peaks corresponding to all the layers suggest van-der-waals epitaxy. In our knowledge this is a first demonstration of as grown superlattices and heterostuctures involving transition metal dichalcogenides and is an important step towards the goal of stacking of 2D crystals like lego blocks.

  15. Effect of strain on voltage-controlled magnetism in BiFeO3-based heterostructures

    PubMed Central

    Wang, J. J.; Hu, J. M.; Yang, T. N.; Feng, M.; Zhang, J. X.; Chen, L. Q.; Nan, C. W.

    2014-01-01

    Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures. PMID:24686503

  16. Gate tunable monolayer MoS{sub 2}/InP heterostructure solar cells

    SciTech Connect

    Lin, Shisheng Wang, Peng; Li, Xiaoqiang; Wu, Zhiqian; Xu, Zhijuan; Zhang, Shengjiao; Xu, Wenli

    2015-10-12

    We demonstrate monolayer molybdenum disulfide (MoS{sub 2})/indium phosphide (InP) van der Waals heterostructure with remarkable photovoltaic response. Furthermore, benefiting from the atomically thin and semiconductor nature of MoS{sub 2}, we have designed the gate tunable MoS{sub 2}/InP heterostructure. Applied with a top gate voltage, the Fermi level of MoS{sub 2} is effectively tuned, and the barrier height at the MoS{sub 2}/InP heterojunction correspondingly changes. The power conversion efficiency of MoS{sub 2}/InP solar cells has reached a value of 7.1% under AM 1.5G illumination with a gate voltage of +6 V. The tunable MoS{sub 2}/InP heterostructure may be promising for highly efficient solar cells.

  17. Pyroelectric photodetector based on ferroelectric crystal-semiconductor thin film heterostructure

    NASA Astrophysics Data System (ADS)

    Poghosyan, Armen; Aghamalyan, N. R.; Guo, R.; Hovsepyan, R. K.; Vardanyan, E. S.

    2010-08-01

    Very important advantage of ZnO thin films is an opportunity of use in the composite heterostructures opening opportunities for development of ZnO-based optoelectronics devices. In this work we report the preparation of ferroelectric crystal - ZnO thin film heterostructures by vacuum deposition method and creation of new type of pyroelectric photodetector. The ferroelectric field effect transistor has been prepared using ZnO:Li films as transistor channel and LiNbO3 and TGS crystals as pyroelectric sensitive element. The photoelectric properties (currents ratio, charge carriers mobility, ampere-watt sensitivity in IR diapason, NEP sensitivity, and photocurrent kinetics) of prepared heterostructures were investigated and first samples of novel pyroelectric photodetector with high sensitivity and detectability were prepared.

  18. Engineering the Charge Transfer in all 2D Graphene-Nanoplatelets Heterostructure Photodetectors.

    PubMed

    Robin, A; Lhuillier, E; Xu, X Z; Ithurria, S; Aubin, H; Ouerghi, A; Dubertret, B

    2016-01-01

    Two dimensional layered (i.e. van der Waals) heterostructures open up great prospects, especially in photodetector applications. In this context, the control of the charge transfer between the constituting layers is of crucial importance. Compared to bulk or 0D system, 2D materials are characterized by a large exciton binding energy (0.1-1 eV) which considerably affects the magnitude of the charge transfer. Here we investigate a model system made from colloidal 2D CdSe nanoplatelets and epitaxial graphene in a phototransistor configuration. We demonstrate that using a heterostructured layered material, we can tune the magnitude and the direction (i.e. electron or hole) of the charge transfer. We further evidence that graphene functionalization by nanocrystals only leads to a limited change in the magnitude of the 1/f noise. These results draw some new directions to design van der Waals heterostructures with enhanced optoelectronic properties. PMID:27143413

  19. Interlayer Exciton Lifetimes in MoSe2 /WSe2 Heterostructures

    NASA Astrophysics Data System (ADS)

    Seyler, Kyle; Rivera, Pasqual; Yu, Hongyi; Schaibley, John; Yan, Jiaqiang; Mandrus, David; Yao, Wang; Xu, Xiaodong

    Semiconductor heterostructures of two-dimensional (2D) transition-metal dichalcogenides (TMDs) have emerged as an exciting new platform for novel device engineering and physics. A fundamental question for the field is how the strong Coulomb interactions, electronic structure, and underlying valley physics affect the optoelectronic response. While researchers have made significant progress in understanding intralayer exciton dynamics in monolayer TMDs, there is comparatively little understanding of the interlayer excitons that form in their heterostructures. In this talk, we will report on time-resolved photoluminescence experiments of interlayer excitons in MoSe2/WSe2 vertical heterostructures, which show wide tunability with gate and variability with emission energy. We will also discuss the underlying mechanisms for this behavior and show how it can be utilized to generate long-lived valley excitons.

  20. Engineering the Charge Transfer in all 2D Graphene-Nanoplatelets Heterostructure Photodetectors

    NASA Astrophysics Data System (ADS)

    Robin, A.; Lhuillier, E.; Xu, X. Z.; Ithurria, S.; Aubin, H.; Ouerghi, A.; Dubertret, B.

    2016-05-01

    Two dimensional layered (i.e. van der Waals) heterostructures open up great prospects, especially in photodetector applications. In this context, the control of the charge transfer between the constituting layers is of crucial importance. Compared to bulk or 0D system, 2D materials are characterized by a large exciton binding energy (0.1–1 eV) which considerably affects the magnitude of the charge transfer. Here we investigate a model system made from colloidal 2D CdSe nanoplatelets and epitaxial graphene in a phototransistor configuration. We demonstrate that using a heterostructured layered material, we can tune the magnitude and the direction (i.e. electron or hole) of the charge transfer. We further evidence that graphene functionalization by nanocrystals only leads to a limited change in the magnitude of the 1/f noise. These results draw some new directions to design van der Waals heterostructures with enhanced optoelectronic properties.

  1. Piezoelectric potential in axial (In,Ga)N/GaN nanowire heterostructures

    NASA Astrophysics Data System (ADS)

    Kaganer, Vladimir M.; Marquardt, Oliver; Brandt, Oliver

    2016-04-01

    We derive analytic expressions for the built-in electrostatic potential arising from piezo- and pyroelectricity in a cylindrical axial In x Ga{}1-xN/GaN nanowire (NW) heterostructure. Our simulations show that, for sufficiently thin NWs, a significant reduction of the built-in potential is reached in comparison to the planar heterostructure of the same In content, thickness, and orientation. This specific feature of axial NW heterostructures makes the aspect ratio of the embedded In x Ga{}1-xN disks an important additional degree of freedom to control the recombination energies. We furthermore show that the magnitude of the polarization potential decreases again above a certain value of the aspect ratio and that the extrema of the potential move from the central axis of the NW towards the side facets when the thickness of the disk is increased.

  2. Synthesis and Assembly of Dipolar Heterostructured Tetrapods: Colloidal Polymers with "Giant tert-butyl" Groups.

    PubMed

    Pavlopoulos, Nicholas G; Dubose, Jeffrey T; Pinna, Nicola; Willinger, Marc-Georg; Char, Kookheon; Pyun, Jeffrey

    2016-01-26

    We report on the first synthesis of a heterostructured semiconductor tetrapod from CdSe@CdS that carries a single dipolar nanoparticle tip from a core-shell colloid of Au@Co. A four-step colloidal total synthesis was developed, where the key step in the synthesis was the selective deposition of a single AuNP tip onto a CdSe@CdS tetrapod under UV-irradiation. Synthetic accessibility to this dipolar heterostructured tetrapod enabled the use of these as colloidal monomers to form colloidal polymers that carry the semiconductor tetrapod as a side chain group attached to the CoNP colloidal polymer main chain. The current report details a number of novel discoveries on the selective synthesis of an asymmetric heterostructured tetrapod that is capable of 1D dipolar assembly into colloidal polymers that carry tetrapods as side chain groups that mimic "giant tert-butyl groups". PMID:26696128

  3. Experimental observation of two massless Dirac-fermion gases in graphene-topological insulator heterostructure

    NASA Astrophysics Data System (ADS)

    Bian, Guang; Chung, Ting-Fung; Chen, Chaoyu; Liu, Chang; Chang, Tay-Rong; Wu, Tailung; Belopolski, Ilya; Zheng, Hao; Xu, Su-Yang; Sanchez, Daniel S.; Alidoust, Nasser; Pierce, Jonathan; Quilliams, Bryson; Barletta, Philip P.; Lorcy, Stephane; Avila, José; Chang, Guoqing; Lin, Hsin; Jeng, Horng-Tay; Asensio, Maria-Carmen; Chen, Yong P.; Zahid Hasan, M.

    2016-06-01

    Graphene and topological insulators (TI) possess two-dimensional (2D) Dirac fermions with distinct physical properties. Integrating these two Dirac materials in a single device creates interesting opportunities for exploring new physics of interacting massless Dirac fermions. Here we report on a practical route to experimental fabrication of graphene–Sb2Te3 heterostructure. The graphene–TI heterostructures are prepared by using a dry transfer of chemical-vapor-deposition grown graphene film. ARPES measurements confirm the coexistence of topological surface states of Sb2Te3 and Dirac π bands of graphene, and identify the twist angle in the graphene–TI heterostructure. The results suggest a potential tunable electronic platform in which two different Dirac low-energy states dominate the transport behavior.

  4. Graphene-Nanodiamond Heterostructures and their application to High Current Devices

    PubMed Central

    Zhao, Fang; Vrajitoarea, Andrei; Jiang, Qi; Han, Xiaoyu; Chaudhary, Aysha; Welch, Joseph O.; Jackman, Richard B.

    2015-01-01

    Graphene on hydrogen terminated monolayer nanodiamond heterostructures provides a new way to improve carrier transport characteristics of the graphene, offering up to 60% improvement when compared with similar graphene on SiO2/Si substrates. These heterostructures offers excellent current-carrying abilities whilst offering the prospect of a fast, low cost and easy methodology for device applications. The use of ND monolayers is also a compatible technology for the support of large area graphene films. The nature of the C-H bonds between graphene and H-terminated NDs strongly influences the electronic character of the heterostructure, creating effective charge redistribution within the system. Field effect transistors (FETs) have been fabricated based on this novel herterostructure to demonstrate device characteristics and the potential of this approach. PMID:26350107

  5. Enhanced Photoelectrochemical Performance from Rationally Designed Anatase/Rutile TiO2 Heterostructures.

    PubMed

    Cao, Fengren; Xiong, Jie; Wu, Fangli; Liu, Qiong; Shi, Zhiwei; Yu, Yanhao; Wang, Xudong; Li, Liang

    2016-05-18

    In a photoelectrochemical (PEC) cell for water splitting, the critical issue is charge separation and transport, which is usually completed by designing semiconductor heterojunctions. TiO2 anatase-rutile mixed junctions could largely improve photocatalytic properties, but impairs PEC water splitting performance. We designed and prepared two types of TiO2 heterostructures with the anatase thin film and rutile nanowire phases organized in different sequences. The two types of heterostructures were used as PEC photoanodes for water splitting and demonstrated completely opposite results. Rutile nanowires on anatase film demonstrated enhanced photocurrent density and onset potential, whereas strong negative performance was obtained from anatase film on rutile nanowire structures. The mechanism was investigated by photoresponse, light absorption and reflectance, and electrochemical impedance spectra. This work revealed the significant role of phase sequence in performance gain of anatase-rutile TiO2 heterostructured PEC photoanodes. PMID:27136708

  6. Laser and Optical Properties of Green-Emitting ZnCdSe Quantum Dot Based Heterostructures

    NASA Astrophysics Data System (ADS)

    Vainilovich, Aliaksei G.; Lutsenko, E. V.; Yablonskii, G. P.; Sedova, I. V.; Sorokin, S. V.; Gronin, S. V.; Ivanov, S. V.; Kop'ev, P. S.

    Green-emitting laser diodes are in great demand for mobile projection media (pico-projector), navigation, underwater communication but they are still absent on the market. InGaN/GaN-based quantum well structures are approaching green spectral region by use of polar, semipolar as well as free-standing GaN substrates. However such heterostructures suffer from high laser thresholds with increase of indium content. A promising alternative way is the use of highly efficient green-emitting undoped ZnCdSe based quantum dot (QD) laser heterostructures optically pumped by blue InGaN laser diodes. Operation of blue-green laser converter based on MBE grown heterostructure with two ZnCdSe QD layers was shown for the first time in [1].

  7. Multilayer heterostructures of magnetic Heusler and binary compounds from first principles

    NASA Astrophysics Data System (ADS)

    Garoufalis, Christos; Galanakis, Iosif

    2016-03-01

    Employing first-principles state-of-the-art electronic structure calculations, we study a series of multilayer heterostructures composed of ferro/ferrimagnetic half-metallic Heusler compounds and binary compounds presenting perpendicular magnetic anisotropy. We relax these heterostructures and study both their electronic and magnetic properties. In most studied cases the Heusler spacer keeps a large value of spin-polarization at the Fermi level even for ultrathin films which attends the maximum value of 100% in the case of the Mn2VSi/MnSi multilayer. Our results pave the way both experimentally and theoretically towards the growth of such multilayer heterostructures and their incorporation in spintronic/magnetoelectronic devices.

  8. Valley-polarized exciton dynamics in a 2D semiconductor heterostructure

    NASA Astrophysics Data System (ADS)

    Rivera, Pasqual; Seyler, Kyle L.; Yu, Hongyi; Schaibley, John R.; Yan, Jiaqiang; Mandrus, David G.; Yao, Wang; Xu, Xiaodong

    2016-02-01

    Heterostructures comprising different monolayer semiconductors provide an attractive setting for fundamental science and device technologies, such as in the emerging field of valleytronics. We realized valley-specific interlayer excitons in monolayer WSe2-MoSe2 vertical heterostructures. We created interlayer exciton spin-valley polarization by means of circularly polarized optical pumping and determined a valley lifetime of 40 nanoseconds. This long-lived polarization enables the visualization of the expansion of a valley-polarized exciton cloud over several micrometers. The spatial pattern of the polarization evolves into a ring with increasing exciton density, a manifestation of valley exciton exchange interactions. Our work introduces van der Waals heterostructures as a promising platform from which to study valley exciton physics.

  9. Strongly coupled phase transition in ferroelectric/correlated electron oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Jiang, Lu; Seok Choi, Woo; Jeen, Hyoungjeen; Egami, Takeshi; Nyung Lee, Ho

    2012-07-01

    We fabricated ultrathin ferroelectric/correlated electron oxide heterostructures composed of the ferroelectric Pb(Zr0.2Ti0.8)O3 and the correlated electron oxide (CEO) La0.8Sr0.2MnO3 on SrTiO3 substrates by pulsed laser epitaxy. The hole accumulation in the ultrathin CEO layer was substantially modified by heterostructuring with the ferroelectric layer, resulting in an insulator-metal transition. In particular, our thickness dependent study showed that drastic changes in transport and magnetic properties were strongly coupled to the modulation of charge carriers by ferroelectric field effect, which was confined to the vicinity of the interface. Thus, our results provide crucial evidence that strong ferroelectric field effect control can be achieved in ultrathin (10 nm) heterostructures, yielding at least a 100 000-fold change in resistivity.

  10. Anisotropic epitaxial ZnO/CdO core/shell heterostructure nanorods

    PubMed Central

    2012-01-01

    Various surface structures and polarities of one-dimensional nanostructures offer additional control in synthesizing heterostructures suitable for optoelectronic and electronic applications. In this work, we report synthesis and characterization of ZnO-CdO nanorod-based heterostructures grown on a-plane sapphire. The heterojunction formed on the sidewall surface of the nanorod shows that wurtzite ZnO {1010} planes are interfaced with rocksalt CdO {100}. This is evidently different from the heterojunction formed on the nanorod top surface, where a ZnO (0001) top plane is interfaced with a CdO (111) plane. Such anisotropic heterostructures are determined by different surface structures of the nanorods and their polarities. Revelation of such anisotropic heterojunctions will provide a clue for understanding charge transport properties in electronic and optoelectronic nanodevices. PMID:23151180

  11. Dynamic in situ visualization of voltage-driven magnetic domain evolution in multiferroic heterostructures

    NASA Astrophysics Data System (ADS)

    Gao, Ya; Hu, Jia-Mian; Wu, Liang; Nan, C. W.

    2015-12-01

    Voltage control of magnetism in multiferroic heterostructures provides a promising solution to the excessive heating in spintronic devices. Direct observation of voltage-modulated magnetic domain evolution dynamics is desirable for studying the mechanism of the voltage control of magnetism at mesoscale, but has remained challenging. Here we explored a characterization method for the dynamic in situ evolution of pure voltage modulated magnetic domains in the heterostructures by employing the scanning Kerr microscopy function in the magneto optic Kerr effect system. The local magnetization reorientation of a Ni/PMN-PT heterostructure were characterized under sweeping applied voltage on the PMN-PT single crystal, and the results show that the magnetization rotation angle in the local regions is much greater than that obtained from macroscopic magnetization hysteresis loops.

  12. Dynamic in situ visualization of voltage-driven magnetic domain evolution in multiferroic heterostructures.

    PubMed

    Gao, Ya; Hu, Jia-Mian; Wu, Liang; Nan, C W

    2015-12-23

    Voltage control of magnetism in multiferroic heterostructures provides a promising solution to the excessive heating in spintronic devices. Direct observation of voltage-modulated magnetic domain evolution dynamics is desirable for studying the mechanism of the voltage control of magnetism at mesoscale, but has remained challenging. Here we explored a characterization method for the dynamic in situ evolution of pure voltage modulated magnetic domains in the heterostructures by employing the scanning Kerr microscopy function in the magneto optic Kerr effect system. The local magnetization reorientation of a Ni/PMN-PT heterostructure were characterized under sweeping applied voltage on the PMN-PT single crystal, and the results show that the magnetization rotation angle in the local regions is much greater than that obtained from macroscopic magnetization hysteresis loops. PMID:26613293

  13. Tunable photoresponse with small drain voltage in few-layer graphene-WSe2 heterostructures

    NASA Astrophysics Data System (ADS)

    Luo, Wei; Qin, Shiqiao; Long, Mingsheng; Liu, Erfu; Fu, Yajun; Zhou, Wei; Miao, Feng; Zhang, Sen; Zhang, Renyan; Zhang, Xue-Ao

    2016-07-01

    Two-dimensional layered heterostructures show great potential to develop optoelectronic systems. Here, we have investigated the photoresponse properties of two contact interfaces in few-layer graphene-WSe2 heterostructures. The photoresponsivity of graphene-WSe2 contact interface is about 2.67 mA/W, and the photoresponsivity of WSe2-metal contact interface is about 0.2 mA/W. Photocurrent images show that the two contact interfaces behave differently under drain voltage from - 0.5 V to 0.5 V. The photoresponsivity of one contact interface increases with the drain voltage, and that of the other decreases with the drain voltage. Experimental results and band diagram studies prove that the photoresponse properties of contact interfaces are tuned by small drain voltage. This study will be beneficial for understanding the effect of drain voltage on the heterostructures.

  14. Valley-polarized exciton dynamics in a 2D semiconductor heterostructure.

    PubMed

    Rivera, Pasqual; Seyler, Kyle L; Yu, Hongyi; Schaibley, John R; Yan, Jiaqiang; Mandrus, David G; Yao, Wang; Xu, Xiaodong

    2016-02-12

    Heterostructures comprising different monolayer semiconductors provide an attractive setting for fundamental science and device technologies, such as in the emerging field of valleytronics. We realized valley-specific interlayer excitons in monolayer WSe2-MoSe2 vertical heterostructures. We created interlayer exciton spin-valley polarization by means of circularly polarized optical pumping and determined a valley lifetime of 40 nanoseconds. This long-lived polarization enables the visualization of the expansion of a valley-polarized exciton cloud over several micrometers. The spatial pattern of the polarization evolves into a ring with increasing exciton density, a manifestation of valley exciton exchange interactions. Our work introduces van der Waals heterostructures as a promising platform from which to study valley exciton physics. PMID:26912854

  15. Photo-induced Modulation Doping in Graphene/Boron nitride Heterostructures

    NASA Astrophysics Data System (ADS)

    Velasco, Jairo, Jr.; Ju, Long; Hwang, Edwin; Kahn, Salman; Nosiglia, Casey; Tsai, Hsin-Zon; Yang, Wei; Zhang, Guangyu; Taniguchi, Takashi; Watanabe, Kenji; Zhang, Yuanbo; Crommie, Michael; Zettl, Alex; Wang, Feng

    2014-03-01

    Van der Waals heterostructures (VDH) provide an exciting new platform for materials engineering, where a variety of layered materials with different electrical, optical and mechanical responses can be stacked together to enable new physics and novel functionalities. We report an emerging optoelectronic phenomenon (i.e. photo-induced modulation doping) in the graphene-boron nitride VDH (G/BN heterostructure). We find it enables flexible and repeatable writing and erasing of charge doping in graphene with optical light. We show that the photo-induced modulation doping maintains the remarkable carrier mobility of the G/BN heterostructure, and it can be used to generate spatially varying doping profiles like pn junctions. Our work contributes towards understanding light matter interactions in VDHs, and introduces a simple technique for creating inhomogeneous doping in high mobility graphene devices. J. Velasco Jr. acknowledges support from UC President's Postdoctoral Fellowship.

  16. Superconducting magnetostatic wave devices using HTS/perovskite-type manganite PCMO heterostructure

    NASA Astrophysics Data System (ADS)

    Terakago, Masafumi; Mine, Shigenobu; Sakatani, Tomotaka; Hontsu, Shigeki; Nishikawa, Hiroaki; Nakamori, Masaya; Tabata, Hitoshi; Kawai, Tomoji

    2001-12-01

    Pr1-xCaxMnO3 (PCMO) (x = 0.15~0.30) has good dielectric and magnetic properties at the microwave band. High-Tc superconductor (HTS)/ferromagnetic PCMO heterostructure has a high potential for superconducting tunable microwave filters and superconducting magnetostatic wave (MSW) devices. In order to demonstrate the preparation possibility of superconducting MSW devices, we investigated the microwave behaviour of YBa2Cu3O7-δ(YBCO)/PCMO heterostructures fabricated by a pulsed laser deposition technique on (La0.3Sr0.7)(Al0.65Ta0.35)O3 (100) substrate. We also fabricated superconducting MSW-band elimination filter (BEF) with YBCO/PCMO structure. The MSW-BEF exhibited notch characteristic that is caused by the energy conversion due to the coupling between the MSW mode and the transverse electromagnetic mode. These results suggest that the HTS/PCMO heterostructure is effective for the superconducting MSW application.

  17. Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

    PubMed

    Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G

    2013-08-27

    Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene. PMID:23886348

  18. Large anisotropic magnetoresistance across the Schottky interface in all oxide ferromagnet/semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Li, P.; Guo, B. L.; Bai, H. L.

    2011-06-01

    Over 80% fourfold symmetric anisotropic magnetoresistance (AMR) across the interface is observed in epitaxial Fe3O4 (001)/Nb:SrTiO3 (001) heterostructures, while the twofold symmetric AMR across the interface in epitaxial Fe3O4 (111)/ZnO (0001) heterostructures is rather small. The large AMR across the interface is considered to be induced by the assistance of magnetocrystalline anisotropic energy for the transport electrons while the applied voltage bias is near the height of Schottky barrier, which is further verified by the fact that a larger critical current is needed for the maximum AMR in the Fe3O4 (001)/Nb:SrTiO3 (001) heterostructures with heavier Nb-doping.

  19. Photovoltaic effect in a-Si/c-Si heterostructure prepared by RF magnetron sputtering technique

    SciTech Connect

    Budaguan, B.G.; Sherchenkov, A.A.; Aivazov, A.A.

    1996-12-31

    Photosensitivity spectral dependencies of the a-Si(n-type)/c-Si(p-type) heterostructure for the different reverse biases, V{sub b}, amorphous Si film thickness, substrate predeposition temperatures, T{sub s}, and annealing conditions, T{sub a}, were investigated in the wavelengths range of 500--1,200 nm. It was found that the position of the relative photosensitivity maximum depends on T{sub a} and V{sub b} and can be varied in the wavelengths range of 840--1,080 nm. The energy band diagram of the heterostructure was analyzed to explain the observed results. It was shown that the photosensitivity properties of the a-Si/c-Si heterostructure depend on the interfacial condition. The perspective application of the structures investigated is IR detector fabrication.

  20. Engineering the Charge Transfer in all 2D Graphene-Nanoplatelets Heterostructure Photodetectors

    PubMed Central

    Robin, A.; Lhuillier, E.; Xu, X. Z.; Ithurria, S.; Aubin, H.; Ouerghi, A.; Dubertret, B.

    2016-01-01

    Two dimensional layered (i.e. van der Waals) heterostructures open up great prospects, especially in photodetector applications. In this context, the control of the charge transfer between the constituting layers is of crucial importance. Compared to bulk or 0D system, 2D materials are characterized by a large exciton binding energy (0.1–1 eV) which considerably affects the magnitude of the charge transfer. Here we investigate a model system made from colloidal 2D CdSe nanoplatelets and epitaxial graphene in a phototransistor configuration. We demonstrate that using a heterostructured layered material, we can tune the magnitude and the direction (i.e. electron or hole) of the charge transfer. We further evidence that graphene functionalization by nanocrystals only leads to a limited change in the magnitude of the 1/f noise. These results draw some new directions to design van der Waals heterostructures with enhanced optoelectronic properties. PMID:27143413

  1. Superior transport properties of InGaN channel heterostructure with high channel electron mobility

    NASA Astrophysics Data System (ADS)

    Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue

    2016-06-01

    A high-quality AlGaN/InGaN heterostructure is grown by pulsed metal organic chemical vapor deposition on a sapphire substrate. A two-step AlN interlayer is adopted to improve the interface morphology and protect the high-quality InGaN channel. Temperature-dependent Hall measurement shows superior transport properties compared with the traditional GaN channel heterostructure at elevated temperatures. Further, a record highest channel electron mobility of 1681 cm2/(V·s) at room temperature for an InGaN channel heterostructure is obtained. We attribute the excellent transport properties to the improvement in the material quality, as well as the rationally designed epitaxial structure and well-controlled growth condition.

  2. NH3 sensing properties polyaniline: TiO2 nanorods heterostructure

    NASA Astrophysics Data System (ADS)

    Patil, U. V.; Ramgir, Niranjan S.; Debnath, A. K.; Karmakar, N.; Aswal, D. K.; Kothari, D. C.; Gupta, S. K.

    2016-05-01

    NH3 sensing properties of polyaniline: TiO2 nanorods heterostructures have been investigated. TiO2 nanorods were synthesized using hydrothermal method. Thin layer of polyanilene was deposited by in-situ oxidative polymerization of aniline over TiO2 nanorods film. The heterostructure film exhibited an enhanced sensor response towards NH3 at room temperature. For example, heterostructure films exhibited a sensor response of 610% towards 100 ppm of NH3 with a response and recovery times of 40 and 60 s, respectively. This response and response kinetics is better than pure PANI films that exhibited a response of 210% with a response and recovery time of 21 and 160 s, respectively.

  3. Spin lifetime tuning in zincblende heterostructures and applications to spin devices

    NASA Technical Reports Server (NTRS)

    Cartoixa, X.; Ting, D. Z. -Y.; Chang, Y. -C.

    2004-01-01

    We present analytical expressions for the D'yakonov-Perel' spin relaxation rates under the combined action of bulk and structural inversion asymmetry for zincblende heterostructures when terms up to linear and third order in k are included in the Hamiltonian. We see for heterostructures that, under the right conditions, the lowest-order-in-k component of the spin relaxation tensor can be made to vanish for all spin components at the same time. We study how the inclusion of terms of higher order in k affects these results.

  4. 3C-SiC/ZnS heterostructured nanospheres with high photocatalytic activity and enhancement mechanism

    SciTech Connect

    Zhang, J.; Wu, X. L. E-mail: paul.chu@cityu.edu.hk; Liu, L. Z.; Yang, L.; Gan, Z. X.; Chu, Paul K. E-mail: paul.chu@cityu.edu.hk

    2015-03-15

    3C-SiC/n-type ZnS heterostructured nanospheres synthesized hydrothermally deliver enhanced photocatalytic performance under visible light excitation. The heterostructured catalysts consisting of 3C-SiC and ZnS nanocrystals with a mean size being less than 5 nm exhibit extended light absorption to the visible range. The proper band structure of the 3C-SiC and ZnS nanocrystals and intrinsic electric field induced by the heterojunction promote separation of photoexcited electrons and holes in the ZnS and 3C-SiC nanocrystals resulting in the increased photocatalytic efficiency. The associated mechanism is studied and proposed.

  5. Resonant Versus Anti-Resonant Tunneling at Carbon Nanotube A-B-A Heterostructures

    NASA Technical Reports Server (NTRS)

    Mingo, N.; Yang, Liu; Han, Jie; Anantram, M. P.

    2001-01-01

    Narrow antiresonances going to zero transmission are found to occur for general (2n,0)(n,n)(2n,0) carbon nanotube heterostructures, whereas the complementary configuration, (n,n)(2n,0)(n,n), displays simple resonant tunneling behaviour. We compute examples for different cases, and give a simple explanation for the appearance of antiresonances in one case but not in the other. Conditions and ranges for the occurrence of these different behaviors are stated. The phenomenon of anti-resonant tunneling, which has passed unnoticed in previous studies of nanotube heterostructures, adds up to the rich set of behaviors available to nanotube based quantum effect devices.

  6. Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Lin, Yu-Chuan; Ghosh, Ram Krishna; Addou, Rafik; Lu, Ning; Eichfeld, Sarah M.; Zhu, Hui; Li, Ming-Yang; Peng, Xin; Kim, Moon J.; Li, Lain-Jong; Wallace, Robert M.; Datta, Suman; Robinson, Joshua A.

    2015-06-01

    Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2-WSe2-graphene and WSe2-MoS2-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

  7. Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures.

    PubMed

    Lin, Yu-Chuan; Ghosh, Ram Krishna; Addou, Rafik; Lu, Ning; Eichfeld, Sarah M; Zhu, Hui; Li, Ming-Yang; Peng, Xin; Kim, Moon J; Li, Lain-Jong; Wallace, Robert M; Datta, Suman; Robinson, Joshua A

    2015-01-01

    Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2-WSe2-graphene and WSe2-MoS2-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics. PMID:26088295

  8. A selector device based on graphene-oxide heterostructures for memristor crossbar applications

    NASA Astrophysics Data System (ADS)

    Wang, Miao; Lian, Xiaojuan; Pan, Yiming; Zeng, Junwen; Wang, Chengyu; Liu, Erfu; Wang, Baigeng; Yang, J. Joshua; Miao, Feng; Xing, Dingyu

    2015-08-01

    Most of the potential applications of memristive devices adopt crossbar architecture for ultra-high density. One of the biggest challenges of the crossbar architecture is severe residue leakage current (sneak path) issue. A possible solution is introducing a selector device with strong nonlinear current-voltage ( I- V) characteristics in series with each memristor in crossbar arrays. Here, we demonstrate a novel selector device based on graphene-oxide heterostructures, which successfully converts a typical linear TaO x memristor into a nonlinear device. The origin of the nonlinearity in the heterostructures is studied in detail, which highlights an important role of the graphene-oxide interfaces.

  9. High-efficiency double-heterostructure AlGaAs/GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Gale, R. P.; Fan, John C. C.; Turner, G. W.; Chapman, R. L.

    1985-01-01

    Double-heterostructure solar cells have been fabricated from wafers prepared by using organometallic chemical vapor deposition to grow a p GaAs absorbing layer sandwiched between p(+) and n(+) AlGaAs layers. The best cell, which incorporates an abrupt AlGaAs/GaAs shallow heterojunction, exhibits a global AM1 one-sun conversion efficiency of 23 percent. The rate at which the open-circuit voltage decreases with increasing temperature is lower for the double-heterostructure cells than for GaAs shallow-homojunction cells.

  10. Tunable carbon nanotube-tungsten carbide nanoparticles heterostructures by vapor deposition

    SciTech Connect

    Xia, Min; Guo, Hongyan; Ge, Changchun; Yan, Qingzhi Lang, Shaoting

    2014-05-14

    A simple, versatile route for the synthesis of carbon nanotube (CNT)-tungsten carbide nanoparticles heterostructures was set up via vapor deposition process. For the first time, amorphous CNTs (α-CNTs) were used to immobilized tungsten carbide nanoparticles. By adjusting the synthesis and annealing temperature, α-CNTs/amorphous tungsten carbide, α-CNTs/W{sub 2}C, and CNTs/W{sub 2}C/WC heterostructures were prepared. This approach provides an efficient method to attach other metal carbides and other nanoparticles to carbon nanotubes with tunable properties.

  11. Method of making an ion-implanted planar-buried-heterostructure diode laser

    DOEpatents

    Brennan, Thomas M.; Hammons, Burrell E.; Myers, David R.; Vawter, Gregory A.

    1992-01-01

    Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

  12. Probing carrier dynamics of individual layers in a heterostructure using transient reflectivity

    SciTech Connect

    Khan, Salahuddin; Jayabalan, J. Singh, Asha; Yogi, Rachana; Chari, Rama

    2015-09-21

    We report the wavelength dependent transient reflectivity measurements in AlGaAs-GaAs heterostructures having two-dimensional electron (or hole) gas near the interface. Using a multilayer model for transient reflectivity, we show that the magnitude and sign of contributions from the carriers in two-dimensional electron (or hole) gas and GaAs to the total signal depends on the wavelength. Further, it has been shown that it is possible to study the carrier dynamics in a given layer of a heterostructure by performing transient reflectivity at specific wavelengths.

  13. Direct sunlight responsive Ag-ZnO heterostructure photocatalyst: Enhanced degradation of rhodamine B

    NASA Astrophysics Data System (ADS)

    Zhai, Hongju; Wang, Lijing; Sun, Dewu; Han, Donglai; Qi, Bing; Li, Xiuyan; Chang, Limin; Yang, Jinghai

    2015-03-01

    The catalytic activity of Ag-ZnO heterostructure on the photocatalytic degradation of rhodamine B was investigated. It demonstrated that Ag-ZnO heterostructure exhibited an enhanced photocatalytic activity compared to pure ZnO nanoparticles under direct sunlight. The possible factors to the photocatalytic acitivity of the sample were explored, including Ag content, dispersity and calcination temperature. It was shown that the sample dispersed by PVP, with 5% mol ratio Ag content, calcined at 400 °C showed the highest photocatalytic acitivity and this catalyst was reusable.

  14. Reactivity of graphene and hexagonal boron nitride in-plane heterostructures with oxygen: a DFT study.

    PubMed

    Nguyen, Manh-Thuong

    2014-08-01

    A density-functional study has been undertaken to investigate the chemical properties of in-plane heterostructures of graphene and hexagonal boron nitride. The interactions of armchair and zigzag linking edges with oxygen are looked at in detail. The results of the calculations indicate that the linking edges are highly reactive to oxygen atoms and predict that oxygen molecules can accordingly be adsorbed dissociatively. Furthermore, because oxygen atoms cooperatively interact with the heterostructures, the process can lead to opening of the linking edges, thus splitting the two materials. PMID:24862336

  15. Strain-induced band alignment in wurtzite/zinc-blende InAs heterostructured nanowires

    NASA Astrophysics Data System (ADS)

    Panda, Jaya Kumar; Roy, Anushree; Chakraborty, Arup; Dasgupta, Indra; Hasanu, Elena; Ercolani, Daniele; Sorba, Lucia; Gemmi, Mauro

    2015-11-01

    We study band alignment in wurtzite/zinc-blende polytype InAs heterostructured nanowires using temperature-dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths in resonance Raman measurements, we probe the electronic band alignment of these semiconductor nanowires near a high-symmetry point of the Brillouin zone (E1 gap). The strain in the crystal structure, as revealed from the shift of the phonon mode, explains the observed band alignment at the wurtzite/zinc-blende interface. Our experimental results are further supported by electronic-structure calculations for such periodic heterostructured interface.

  16. Spin-Dependent Transport Phenomena in Ferromagnet/Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Geppert, Chad Christopher

    This dissertation examines several aspects of spin-dependent transport phenomena in epitaxially grown ferromagnet/n-GaAs heterostructures. Further maturation of the field of semiconductor-based spintronics is hindered by difficulties in evaluating device performance across materials systems. Using Fe/n-GaAs and Co2MnSi/n-GaAs heterostructures as a test case, the main goal of this work is to demonstrate how such difficulties may be overcome by (1) specifying a more quantitative framework for evaluating transport parameters and (2) the introduction of a new spin-to-charge conversion phenomenon which may be parameterized by bulk semiconductor parameters. In the introductory chapter, this work is placed in the broader context of developing improved methods for the generation, modulation, and detection of spins. The lateral spin-valve geometry is presented as a concrete example of the typical measurement procedures employed. Chapter 2 presents the charge-based transport properties of these samples and establishes the notation and calculation techniques to be employed in subsequent chapters. In particular, we examine in detail the calculation of the electrochemical potential for a given carrier concentration. Chapter 3 provides a full derivation of the equations governing spin-dependent transport in the large polarization regime. This is applied to the case of extracting spin lifetimes and diffusion rates, demonstrating how quantitative agreement with theoretical predictions may be obtained upon properly accounting for both device geometry and material parameters. Further examination of the boundary conditions applicable to the heterojunctions of these samples demonstrates to what extent device performance may be parameterized across materials systems. Chapter 4 presents experimental observations of a new spin-to-charge conversion phenomenon using a non-magnetic probe. In the presence of a large non-equilibrium spin accumulation, the combination of a non-constant density

  17. Fabrication of Metal-Semiconductor Heterostructures in Silicon Nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Luyun

    The increasing demand for fossil fuels and the need to reduce greenhouse gases require clean energy sources and more efficient utilization of energy. Thermoelectric materials provide a means toward achieving these goals since they convert heat, including waste heat, directly into an electric potential difference. Metal-semiconductor heterostructures can work as Schottky barriers in thermoelectric materials to increase thermoelectric efficiency. In this project, nickel silicide phases were introduced into silicon nanowires (SiNWs) to build up the Schottky barrier. SiNW arrays were fabricated using a metal-assisted chemical process, creating SiNWs about 200 nm in diameter and 30im in length. Different methods were adopted for nickel deposition: electroless nickel deposition, electro nickel deposition, E-beam deposition, and thermal evaporation. The samples were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that depositing nickel on SiNWs in an aqueous solution without electricity is a simple way to deposit nickel particles, and the morphology of nickel particles depends on the concentration of the deposition bath. However, an aqueous solution will cause oxidation of the SiNWs and hinder the formation of nickel silicide. To solve this problem, depositing nickel on SiNWs in organic solutions inside an oxygen-free glove box is a way to prevent oxidation, and nickel can diffuse into silicon substrates easily via annealing when there no oxidation layer on the surface of SiNWs. The dominant phase formed in these samples is NiSi2 after being annealed at 650°C for one hour in a tube furnace.

  18. Shot Noise in Semiconductor Heterostructure Systems Exhibiting Negative Differential Resistance

    NASA Astrophysics Data System (ADS)

    Song, W.; Kuznetsov, V. V.; Mendez, E. E.

    2002-03-01

    It has been observed [1,2] before that the shot noise of the current, I, in a resonant tunneling (RT) diode is enhanced over its classical value of 2eI in the region of negative differential resistance (NDR). Here we address the question of whether that enhancement is inherent to RT mechanism or general to any system that exhibits NDR. We have measured shot noise in a heterostructure consisting of two identical 4.2 nm /2.3 nm GaAs/AlGaAs superlattices (S) separated by a 10 nm AlGaAs barrier (B). When a voltage is applied between the two superlattices, electrons tunnel through the barrier from the emitter's miniband to the collector's. The current increases linearly with voltage until the two minibands are completely misaligned in energy, at which point the current drops and a sharp NDR develops. The shot noise measured at T=4K in this S-B-S structure was exactly 2eI through the entire voltage range, including NDR region. In contrast, similar measurement done in RT devices showed a shot noise at least three times its classical value. These results prove that enhancement of measured shot noise is not general to devices with NDR or related to electrical coupling with the external circuit, but it is a consequence of the physical mechanism underlying resonant tunneling. [1] G. Iannaccone et al., Phys. Rev. Lett. 80, 1054 (1998) [2] V. V. Kuznetsov et al., Phys. Rev. B 58, R10159 (1998)

  19. The 5th Engineering Foundation Conference: Advanced Heterostructure Transistors

    NASA Astrophysics Data System (ADS)

    1992-12-01

    The session on Heterostructure FET's concentrated on power devices. L. Eastman of Cornell University reported 5 W at 4 GHz with 70% efficiency and 15 dB of gain from a GE device, and 1 W at 4 GHz with 80% efficiency from Raytheon. J. Wolter described avalanche breakdown via DX centers in AlGaAs, and theoretical optimization of deep submicron HFET's for power handling was reported by M. Das. Silicon-germanium HBT's have made several improvements. K. Ismail of Cairo University and IBM showed how the Si/SiGe band lineup can be changed by strain relief, producing barriers to electrons as well as holes. Very high mobilities were reported, and the claim was made that SiGe devices at 77 K may be operationally equivalent to III-V devices at room temperature. This would clearly be important given the fabrication advantages of silicon-based technologies. Silicon-germanium HBT technology seemed to be too complex to insert into digital processes, but SiGe FET's may not be. Resonant-tunneling diodes (RTD's) have been combined into potentially multigigahertz shift-register circuits by G. Sollner at MIT Lincoln Laboratory. R. Behringer of AT&T reported experiments in optically controlled patterned growth of Na gratings using a technique that may be applicable to imaging In or Ga atoms during MBE growth. The consequences of optical phonon propagation in AlGaAs structures were discussed experimentally by G. Maracas of Motorola and L. Eastman of Cornell, and theoretically by K. W. Kim of the University of North Carolina. Interesting effects occur because optical phonons in GaAs cannot propagate in AlAs and conversely. HBT papers from III-V materials dwelt on materials issues nad centered on carbon doping and its associated strain and activation.

  20. High pressure optical studies of semiconductors and heterostructures. Final report

    SciTech Connect

    Chandrasekhar, H.R.

    1995-02-01

    The authors have studied the effects of hydrostatic pressure on the confined transitions in quantum well heterostructures, using lattice matched GaAs/Al{sub x}GaAs{sub 1{minus}x}As, strained layer narrow band gap GaSb/AlSb and In{sub x}Ga{sub 1{minus}x}As/GaAs, and strained layer wide gap Zn{sub 1{minus}x}Cd{sub x}Se/ZnSe as examples. Precise values of the energies, pressure coefficients and band alignments are determined. In strained epilayers the interfacial strains, deformation potential constants and compressibilities are deduced. Strain compensation, structural stability and phase transitions are probed. The authors have observed a novel type of Fano resonance of excitons in GaAs associated with the {Gamma} conduction band as they hybridize with the X and L continua via electron-phonon coupling. This effect is used to extract the intervalley electron-phonon deformation potential D{sub {Gamma}X} to be 10.7 {+-} 0.7 eV/{angstrom}. They have observed a new electron trap state in Al{sub 0.3}Ga{sub 0.7}As doped with silicon at pressure of 60 kbar. They postulate that this new trap state has a large lattice relaxation with the trap energy well above the X CB. These trap states may be present in all Al{sub x}Ga{sub x}As materials and may be dominant at large x values (0.7 < x < 1).

  1. NiO nanosheet/TiO2 nanorod-constructed p-n heterostructures for improved photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Sun, Bin; Zhou, Guowei; Gao, Tingting; Zhang, Huaijin; Yu, Haohai

    2016-02-01

    NiO nanosheet/acid-corroded TiO2 nanorod (A-TiO2 nanorod) heterostructures with high photocatalytic activity were successfully fabricated via a facile and low-cost hydrothermal route. The as-prepared heterostructures featured NiO nanosheets with uniformly assembled A-TiO2 nanorods and a rough surface. The morphology, structure, and photoelectric properties of the pristine NiO nanosheets and TiO2-based nanomaterials were characterized in detail, and results revealed that secondary NiO nanosheets were successfully grown on TiO2 nanorod substrates to achieve a p-n heterostructure between the cubic structure NiO and the TiO2 anatase phase. In comparison with P25, NiO nanosheets, TiO2 nanorods, and A-TiO2 nanorods, the proposed heterostructures exhibited markedly enhanced photocatalytic activity for the degradation of methyl orange under UV light irradiation. Specifically, the NiO nanosheet/A-TiO2 nanorod heterostructures exhibited the best photocatalytic activity, achieving 100% photocatalytic efficiency within 20 min. The observed enhancement in photocatalytic activity was attributed to the synergetic contributions of p-n heterostructures and the large specific surface area of the catalyst, which may improve the separation of photogenerated electron-hole pairs and prolong the lifetime of charge carriers. The heterostructures could be easily recycled without observable decreases in photocatalytic activity because of their one-dimensional nanostructural property.

  2. Equally efficient interlayer exciton relaxation and improved absorption in epitaxial and nonepitaxial MoS2/WS2 heterostructures.

    PubMed

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Purezky, Alexander A; Geohegan, David B; Kim, Ki Wook; Zhang, Yong; Cao, Linyou

    2015-01-14

    Semiconductor heterostructures provide a powerful platform to engineer the dynamics of excitons for fundamental and applied interests. However, the functionality of conventional semiconductor heterostructures is often limited by inefficient charge transfer across interfaces due to the interfacial imperfection caused by lattice mismatch. Here we demonstrate that MoS(2)/WS(2) heterostructures consisting of monolayer MoS(2) and WS(2) stacked in the vertical direction can enable equally efficient interlayer exciton relaxation regardless the epitaxy and orientation of the stacking. This is manifested by a similar 2 orders of magnitude decrease of photoluminescence intensity in both epitaxial and nonepitaxial MoS(2)/WS(2) heterostructures. Both heterostructures also show similarly improved absorption beyond the simple superimposition of the absorptions of monolayer MoS(2) and WS(2). Our result indicates that 2D heterostructures bear significant implications for the development of photonic devices, in particular those requesting efficient exciton separation and strong light absorption, such as solar cells, photodetectors, modulators, and photocatalysts. It also suggests that the simple stacking of dissimilar 2D materials with random orientations is a viable strategy to fabricate complex functional 2D heterostructures, which would show similar optical functionality as the counterpart with perfect epitaxy. PMID:25469768

  3. Black phosphorene/monolayer transition-metal dichalcogenides as two dimensional van der Waals heterostructures: a first-principles study.

    PubMed

    You, Baiqing; Wang, Xiaocha; Zheng, Zhida; Mi, Wenbo

    2016-03-14

    The electronic structure of black phosphorene (BP)/monolayer 1H-XT2 (X = Mo, W; T = S, Se, Te) two dimensional (2D) van der Waals heterostructures have been calculated by the first-principles method. It is found that the electronic band structures of both BP and XT2 are preserved in the combined van der Waals heterostructures. The WSe2/BP van der Waals heterostructure demonstrates a type-I band alignment, but the MoS2/BP, MoSe2/BP, MoTe2/BP, WS2/BP and WTe2/BP van der Waals heterostructures demonstrate a type-II band alignment. In particular, the n-type XT2/p-type BP van der Waals heterostructures can be applied in p-n diode and logical devices. Strong spin splitting appears in all of the heterostructures when considering the spin orbital coupling. Our results play a significant role in the prediction of novel 2D van der Waals heterostructures that have potential applications in spin-filter devices, spin field effect transistors, optoelectronic devices, etc. PMID:26899350

  4. Bandgap properties of diamond structure photonic crystal heterostructures with inclined and curved interfaces

    SciTech Connect

    Lei, Haitao; Li, Yong; Wang, Hong

    2014-06-14

    The 3D (dimensional) diamond structure photonic crystal heterostructures with different lattice constants were prepared using rapid prototyping and gel casting with alumina. In this paper, heterostructures with inclined and curved interfaces were designed and its bandgap properties were studied. The normalized resonant intensity of electromagnetic wave in heterostructure with inclined and curved interface is stronger than that in the ordinary heterostructure without modified interface. The influence of curved interface on transmission properties of electromagnetic wave was investigated with the radius of curvature ranging from 17 mm to 37 mm at 5 mm interval. The results show that two resonant modes appear in the photonic band gap, being similar to the band gap characteristics of the photonic crystals with two defects inside. With the increasing of the radius of curvature, the resonant mode shift to higher frequency. In the structure with a radius of curvature of 32 mm, a guiding band appears in the photonic band gap. Further increase in the radius of curvature, the guiding band will split into two resonant modes again and the two resonant modes shift to lower frequencies.

  5. Lattice Mismatch Dominant Yet Mechanically Tunable Thermal Conductivity in Bilayer Heterostructures.

    PubMed

    Gao, Yuan; Liu, Qingchang; Xu, Baoxing

    2016-05-24

    Heterostructures that are assembled by interfacing two-dimensional (2D) materials offer a unique platform for the emerging devices with unprecedented functions. The attractive functions in heterostructures that are usually absent and beyond the single layer 2D materials are largely affected by the inherent lattice mismatch between layers. Using nonequilibrium molecular dynamics simulations, we show that the phonon thermal transport in the graphene-MoS2 bilayer heterostructure is reduced by the lattice mismatch, and the reduction can be mitigated well by an external tension, weakening the effect of inherent mismatch-induced strain on thermal conductivity. Mechanical analysis in each layered component indicates that the external tension will alleviate the lattice mismatch-induced deformation. The phonon spectra are also softened by the applied tension with a significant shift of frequency from high to low modes. A universal theory is proposed to quantitatively predict the role of the lattice mismatch in thermal conductivity of various bilayer heterostructures and shows good agreement with simulations. PMID:27093571

  6. Three-dimensional heterostructure of metallic nanoparticles and carbon nanotubes as potential nanofiller.

    PubMed

    Kim, Whi Dong; Huh, Jun Young; Ahn, Ji Young; Lee, Jae Beom; Lee, Dongyun; Hong, Suck Won; Kim, Soo Hyung

    2012-01-01

    The effect of the dimensionality of metallic nanoparticle-and carbon nanotube-based fillers on the mechanical properties of an acrylonitrile butadiene styrene (ABS) polymer matrix was examined. ABS composite films, reinforced with low dimensional metallic nanoparticles (MNPs, 0-D) and carbon nanotubes (CNTs, 1-D) as nanofillers, were fabricated by a combination of wet phase inversion and hot pressing. The tensile strength and elongation of the ABS composite were increased by 39% and 6%, respectively, by adding a mixture of MNPs and CNTs with a total concentration of 2 wt%. However, the tensile strength and elongation of the ABS composite were found to be significantly increased by 62% and 55%, respectively, upon addition of 3-D heterostructures with a total concentration of 2 wt%. The 3-D heterostructures were composed of multiple CNTs grown radially on the surface of MNP cores, resembling a sea urchin. The mechanical properties of the ABS/3-D heterostructured nanofiller composite films were much improved compared to those of an ABS/mixture of 0-D and 1-D nanofillers composite films at various filler concentrations. This suggests that the 3-D heterostructure of the MNPs and CNTs plays a key role as a strong reinforcing agent in supporting the polymer matrix and simultaneously serves as a discrete force-transfer medium to transfer the loaded tension throughout the polymer matrix. PMID:22455480

  7. Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures

    PubMed Central

    Pierucci, Debora; Henck, Hugo; Naylor, Carl H.; Sediri, Haikel; Lhuillier, Emmanuel; Balan, Adrian; Rault, Julien E.; Dappe, Yannick J.; Bertran, François; Fèvre, Patrick Le; Johnson, A. T. Charlie; Ouerghi, Abdelkarim

    2016-01-01

    Two-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science, as it constitutes an outstanding platform to investigate the interlayer interaction in van der Waals heterostructures. Here, we study large area MoS2-graphene-heterostructures formed by direct transfer of chemical-vapor deposited MoS2 layer onto epitaxial graphene/SiC. We show that via a direct transfer, which minimizes interface contamination, we can obtain high quality and homogeneous van der Waals heterostructures. Angle-resolved photoemission spectroscopy (ARPES) measurements combined with Density Functional Theory (DFT) calculations show that the transition from indirect to direct bandgap in monolayer MoS2 is maintained in these heterostructures due to the weak van der Waals interaction with epitaxial graphene. A downshift of the Raman 2D band of the graphene, an up shift of the A1g peak of MoS2 and a significant photoluminescence quenching are observed for both monolayer and bilayer MoS2 as a result of charge transfer from MoS2 to epitaxial graphene under illumination. Our work provides a possible route to modify the thin film TDMCs photoluminescence properties via substrate engineering for future device design. PMID:27246929

  8. Enhanced orbital magnetic moments in magnetic heterostructures with interface perpendicular magnetic anisotropy

    PubMed Central

    Ueno, Tetsuro; Sinha, Jaivardhan; Inami, Nobuhito; Takeichi, Yasuo; Mitani, Seiji; Ono, Kanta; Hayashi, Masamitsu

    2015-01-01

    We have studied the magnetic layer thickness dependence of the orbital magnetic moment in magnetic heterostructures to identify contributions from interfaces. Three different heterostructures, Ta/CoFeB/MgO, Pt/Co/AlOx and Pt/Co/Pt, which possess significant interface contribution to the perpendicular magnetic anisotropy, are studied as model systems. X-ray magnetic circular dichroism spectroscopy is used to evaluate the relative orbital moment, i.e. the ratio of the orbital to spin moments, of the magnetic elements constituting the heterostructures. We find that the relative orbital moment of Co in Pt/Co/Pt remains constant against its thickness whereas the moment increases with decreasing Co layer thickness for Pt/Co/AlOx, suggesting that a non-zero interface orbital moment exists for the latter system. For Ta/CoFeB/MgO, a non-zero interface orbital moment is found only for Fe. X-ray absorption spectra shows that a particular oxidized Co state in Pt/Co/AlOx, absent in other heterosturctures, may give rise to the interface orbital moment in this system. These results show element specific contributions to the interface orbital magnetic moments in ultrathin magnetic heterostructures. PMID:26456454

  9. Green Color Purification in Tb(3+) Ions through Silica Inverse Opal Heterostructure.

    PubMed

    Shrivastava, Vishnu Prasad; Sivakumar, Sri; Kumar, Jitendra

    2015-06-10

    The ordered SiO2:Tb(3+) inverse opal heterostructure films are fabricated through polystyrene spheres hetero-opal template using the convective self-assembly method to examine their potential for color purification. Their optical properties and photoluminescence have been investigated and compared with individual single inverse opals and reference (SiO2:Tb(3+) powder). The heterostructures are shown to possess two broad photonic stop bands separated by an effective pass band, causing suppression of blue, orange, and red emission bands corresponding to (5)D4 → (7)F(j); j = 6, 4, 3 transitions, respectively and an enhancement of green emission (i.e., (5)D4 → (7)F5). Although the suppression of various emission occurs because of its overlap with the photonic band gaps (PSBs), the enhancement of green radiation is observed because of its location matching with the pass band region. The Commission International de l'Eclairage (CIE) chromaticity coordinates of the emission spectrum of the heterostructure based on polystyrene sphere of 390 and 500 nm diameter are x = 0.2936, y = 0.6512 and lie closest to those of standard green color (wavelength 545 nm). In addition, a significant increase observed in luminescence lifetime for (5)D4 level of terbium in inverse opal heterostructures vis-à-vis reference (SiO2:Tb(3+) powder) is attributed to the change in the effective refractive index. PMID:25988498

  10. Revealing the planar chemistry of two-dimensional heterostructures at the atomic level.

    PubMed

    Chou, Harry; Ismach, Ariel; Ghosh, Rudresh; Ruoff, Rodney S; Dolocan, Andrei

    2015-01-01

    Two-dimensional (2D) atomic crystals and their heterostructures are an intense area of study owing to their unique properties that result from structural planar confinement. Intrinsically, the performance of a planar vertical device is linked to the quality of its 2D components and their interfaces, therefore requiring characterization tools that can reveal both its planar chemistry and morphology. Here, we propose a characterization methodology combining (micro-) Raman spectroscopy, atomic force microscopy and time-of-flight secondary ion mass spectrometry to provide structural information, morphology and planar chemical composition at virtually the atomic level, aimed specifically at studying 2D vertical heterostructures. As an example system, a graphene-on-h-BN heterostructure is analysed to reveal, with an unprecedented level of detail, the subtle chemistry and interactions within its layer structure that can be assigned to specific fabrication steps. Such detailed chemical information is of crucial importance for the complete integration of 2D heterostructures into functional devices. PMID:26099196

  11. Method of making a nonplanar buried-heterostructure distributed-feedback laser

    SciTech Connect

    Dolan, G.J.; Logan, R.A.; Temkin, H.; Wilt, D.P.

    1987-10-27

    This patent describes a method for making a distributed feedback laser. The method comprises forming a buried heterostructure on a substrate by sequential deposition of layers including an active layer and a cladding layer. The method comprises producing a grating structure on a nonplanar surface of the cladding layer.

  12. Transport properties in AlInSb/InAsSb heterostructures

    SciTech Connect

    Zhang, Yuwei; Zhang, Yang Wang, Chengyan; Zeng, Yiping

    2013-12-28

    Based on theoretical studies of transport properties in InAsSb-based quantum well heterostructures, we propose a material design for InAsSb quantum well with AlInSb barrier. Variation of electron mobility and two-dimensional electron gas concentration in Al{sub y}In{sub 1−y}Sb/InAs{sub 1−x}Sb{sub x} heterostructures over the compositional range of which InAsSb is fully strained to AlInSb are investigated, where impact from dislocation scattering could be minimized. In comparison with InAs and InSb based quantum well heterostructures, InAsSb is advantageous in achieving the highest electron mobility despite of alloy disorder scattering. The maximum mobility of 37 000 cm{sup 2}/V s is attainable in 15 nm InAs{sub 0.2}Sb{sub 0.8} quantum well with Al{sub 0.24}In{sub 0.76}Sb barrier and there is great potential for further improvement. Our InAsSb based quantum well heterostructure is proved to be a robust structure for high-speed applications.

  13. Tunneling Spectroscopy Study of Spin-Polarized Quasiparticle Injection Effects in Cuparate/Manganite Heterostructures

    NASA Technical Reports Server (NTRS)

    Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

    1998-01-01

    Scanning tunneling spectroscopy was performed at 4.2K on epitaxial thin-film heterostructures comprising YBa2Cu3O7 and La0.7Ca0.3MnO3, to study the microscopic effects of spin-polarized quasiparticle injection from the half-metallic ferromagnetic manganite on the high-Tc cuprate superconductor.

  14. Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures.

    PubMed

    Pierucci, Debora; Henck, Hugo; Naylor, Carl H; Sediri, Haikel; Lhuillier, Emmanuel; Balan, Adrian; Rault, Julien E; Dappe, Yannick J; Bertran, François; Fèvre, Patrick Le; Johnson, A T Charlie; Ouerghi, Abdelkarim

    2016-01-01

    Two-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science, as it constitutes an outstanding platform to investigate the interlayer interaction in van der Waals heterostructures. Here, we study large area MoS2-graphene-heterostructures formed by direct transfer of chemical-vapor deposited MoS2 layer onto epitaxial graphene/SiC. We show that via a direct transfer, which minimizes interface contamination, we can obtain high quality and homogeneous van der Waals heterostructures. Angle-resolved photoemission spectroscopy (ARPES) measurements combined with Density Functional Theory (DFT) calculations show that the transition from indirect to direct bandgap in monolayer MoS2 is maintained in these heterostructures due to the weak van der Waals interaction with epitaxial graphene. A downshift of the Raman 2D band of the graphene, an up shift of the A1g peak of MoS2 and a significant photoluminescence quenching are observed for both monolayer and bilayer MoS2 as a result of charge transfer from MoS2 to epitaxial graphene under illumination. Our work provides a possible route to modify the thin film TDMCs photoluminescence properties via substrate engineering for future device design. PMID:27246929

  15. Lateral graphene-hBCN heterostructures as a platform for fully two-dimensional transistors.

    PubMed

    Fiori, Gianluca; Betti, Alessandro; Bruzzone, Samantha; Iannaccone, Giuseppe

    2012-03-27

    We propose that lateral heterostructures of single-atomic-layer graphene and hexagonal boron-carbon-nitrogen (hBCN) domains, can represent a powerful platform for the fabrication and the technological exploration of real two-dimensional field-effect transistors. Indeed, hBCN domains have an energy bandgap between 1 and 5 eV, and are lattice-matched with graphene; therefore they can be used in the channel of a FET to effectively inhibit charge transport when the transistor needs to be switched off. We show through ab initio and atomistic simulations that a FET with a graphene-hBCN-graphene heterostructure in the channel can exceed the requirements of the International Technology Roadmap for Semiconductors for logic transistors at the 10 and 7 nm technology nodes. Considering the main figures of merit for digital electronics, a FET with gate length of 7 nm at a supply voltage of 0.6 V exhibits I(on)/I(off) ratio larger than 10(4), intrinsic delay time of about 0.1 ps, and a power-delay-product close to 0.1 nJ/m. More complex graphene-hBCN heterostructures can allow the realization of different multifunctional devices, translating on a truly two-dimensional structure some of the device principles proposed during the first wave of nanoelectronics based on III-V heterostructures, as for example the resonant tunneling FET. PMID:22372431

  16. Aqueous synthesis and enhanced photocatalytic activity of ZnO/Fe2O3 heterostructures

    NASA Astrophysics Data System (ADS)

    Achouri, Faouzi; Corbel, Serge; Aboulaich, Abdelhay; Balan, Lavinia; Ghrabi, Ahmed; Ben Said, Myriam; Schneider, Raphaël

    2014-10-01

    We report a facile synthesis of ZnO/Fe2O3 heterostructures based on the hydrolysis of FeCl3 in the presence of ZnO nanoparticles. The material structure, composition, and its optical properties have been examined by means of transmission electron microscopy, scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and diffuse reflectance UV-visible spectroscopy. Results obtained show that 2.9 nm-sized Fe2O3 nanoparticles produced assemble with ZnO to form ZnO/Fe2O3 heterostructures. We have evaluated the photodegradation performances of ZnO/Fe2O3 materials using salicylic acid under UV-light. ZnO/Fe2O3 heterostructures exhibited enhanced photocatalytic capabilities than commercial ZnO due to the effective electron/hole separation at the interfaces of ZnO/Fe2O3 allowing the enhanced hydroxyl and superoxide radicals production from the heterostructure.

  17. Vertical and in-plane heterostructures from WS2/MoS2 monolayers.

    PubMed

    Gong, Yongji; Lin, Junhao; Wang, Xingli; Shi, Gang; Lei, Sidong; Lin, Zhong; Zou, Xiaolong; Ye, Gonglan; Vajtai, Robert; Yakobson, Boris I; Terrones, Humberto; Terrones, Mauricio; Tay, Beng Kang; Lou, Jun; Pantelides, Sokrates T; Liu, Zheng; Zhou, Wu; Ajayan, Pulickel M

    2014-12-01

    Layer-by-layer stacking or lateral interfacing of atomic monolayers has opened up unprecedented opportunities to engineer two-dimensional heteromaterials. Fabrication of such artificial heterostructures with atomically clean and sharp interfaces, however, is challenging. Here, we report a one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconnected heterostructures of WS2/MoS2 via control of the growth temperature. Vertically stacked bilayers with WS2 epitaxially grown on top of the MoS2 monolayer are formed with preferred stacking order at high temperature. A strong interlayer excitonic transition is observed due to the type II band alignment and to the clean interface of these bilayers. Vapour growth at low temperature, on the other hand, leads to lateral epitaxy of WS2 on MoS2 edges, creating seamless and atomically sharp in-plane heterostructures that generate strong localized photoluminescence enhancement and intrinsic p-n junctions. The fabrication of heterostructures from monolayers, using simple and scalable growth, paves the way for the creation of unprecedented two-dimensional materials with exciting properties. PMID:25262094

  18. Quantum mechanical solver for confined heterostructure tunnel field-effect transistors

    SciTech Connect

    Verreck, Devin Groeseneken, Guido; Van de Put, Maarten; Sorée, Bart; Magnus, Wim; Verhulst, Anne S.; Collaert, Nadine; Thean, Aaron; Vandenberghe, William G.

    2014-02-07

    Heterostructure tunnel field-effect transistors (HTFET) are promising candidates for low-power applications in future technology nodes, as they are predicted to offer high on-currents, combined with a sub-60 mV/dec subthreshold swing. However, the effects of important quantum mechanical phenomena like size confinement at the heterojunction are not well understood, due to the theoretical and computational difficulties in modeling realistic heterostructures. We therefore present a ballistic quantum transport formalism, combining a novel envelope function approach for semiconductor heterostructures with the multiband quantum transmitting boundary method, which we extend to 2D potentials. We demonstrate an implementation of a 2-band version of the formalism and apply it to study confinement in realistic heterostructure diodes and p-n-i-n HTFETs. For the diodes, both transmission probabilities and current densities are found to decrease with stronger confinement. For the p-n-i-n HTFETs, the improved gate control is found to counteract the deterioration due to confinement.

  19. First principles calculations of solid-state thermionic transport in layered van der Waals heterostructures.

    PubMed

    Wang, Xiaoming; Zebarjadi, Mona; Esfarjani, Keivan

    2016-08-21

    This work aims at understanding solid-state energy conversion and transport in layered (van der Waals) heterostructures in contact with metallic electrodes via a first-principles approach. As an illustration, a graphene/phosphorene/graphene heterostructure in contact with gold electrodes is studied by using density functional theory (DFT)-based first principles calculations combined with real space Green's function (GF) formalism. We show that for a monolayer phosphorene, quantum tunneling dominates the transport. By adding more phosphorene layers, one can switch from tunneling-dominated transport to thermionic-dominated transport, resulting in transporting more heat per charge carrier, thus, enhancing the cooling coefficient of performance. The use of layered van der Waals heterostructures has two advantages: (a) thermionic transport barriers can be tuned by changing the number of layers, and (b) thermal conductance across these non-covalent structures is very weak. The phonon thermal conductance of the present van der Waals heterostructure is found to be 4.1 MW m(-2) K(-1) which is one order of magnitude lower than the lowest value for that of covalently-bonded interfaces. The thermionic coefficient of performance for the proposed device is 18.5 at 600 K corresponding to an equivalent ZT of 0.13, which is significant for nanoscale devices. This study shows that layered van der Waals structures have great potential to be used as solid-state energy-conversion devices. PMID:27314610

  20. Interfacial thermal conductance of a silicene/graphene bilayer heterostructure and the effect of hydrogenation.

    PubMed

    Liu, Bo; Baimova, Julia A; Reddy, Chilla D; Law, Adrian Wing-Keung; Dmitriev, Sergey V; Wu, Hong; Zhou, Kun

    2014-10-22

    van der Waals heterostructures, obtained by stacking layers of isolated two-dimensional atomic crystals like graphene (GE) and silicene (SE), are one of emerging nanomaterials for the development of future multifunctional devices. Thermal transport behaviors at the interface of these heterostructures play a pivotal role in determining their thermal properties and functional performance. Using molecular dynamics simulations, the interfacial thermal conductance G of an SE/GE bilayer heterostructure is studied. Simulations show that G of a pristine SE/GE bilayer at room temperature is 11.74 MW/m(2)K when heat transfers from GE to SE, and is 9.52 MW/m(2)K for a reverse heat transfer, showing apparent thermal rectification effects. In addition, G increases monotonically with both the temperature and the interface coupling strength. Furthermore, hydrogenation of GE is efficient in enhancing G if an optimum hydrogenation pattern is adopted. By changing the hydrogen coverage f, G can be controllably manipulated and maximized up to five times larger than that of pristine SE/GE. This study is helpful for understanding the interface thermal transport behaviors of novel van der Waals heterostructures and provides guidance for the design and control of their thermal properties. PMID:25308778

  1. Magnetoelectric coupling characteristics in multiferroic heterostructures with different thickness of nanocrystalline soft magnetic alloy

    NASA Astrophysics Data System (ADS)

    Chen, Lei; Wang, Yao

    2016-05-01

    Magnetoelectric(ME) coupling characteristics in multiferroic heterostructures with different thickness of nanocrystalline soft magnetic alloy has been investigated at low frequency. The ME response with obvious hysteresis, self-biased and dual-peak phenomenon is observed for multiferroic heterostructures, which results from strong magnetic interactions between two ferromagnetic materials with different magnetic properties, magnetostrictions and optimum bias magnetic fields Hdc,opti. The proposed multiferroic heterostructures not only enhance ME coupling significantly, but also broaden dc magnetic bias operating range and overcomes the limitations of narrow bias range. By optimizing the thickness of nanocrystalline soft magnetic alloy Tf, a significantly zero-biased ME voltage coefficient(MEVC) of 14.8mV/Oe (185 mV/cmṡ Oe) at Tf = 0.09 mm can be obtained, which is about 10.8 times as large as that of traditional PZT/Terfenol-D composite with a weak ME coupling at zero bias Hdc,zero. Furthermore, when Tf increases from 0.03 mm to 0.18 mm, the maximum MEVC increases nearly linearly with the increased Tf at Hdc,opti. Additionally, the experimental results demonstrate the ME response for multiferroic heterostructures spreads over a wide magnetic dc bias operating range. The excellent ME performance provides a promising and practicable application for both highly sensitive magnetic field sensors without bias and ME energy harvesters.

  2. Tunable electronic structure of black phosphorus/blue phosphorus van der Waals p-n heterostructure

    NASA Astrophysics Data System (ADS)

    Huang, Le; Li, Jingbo

    2016-02-01

    First principles calculations are used to explore the structural and electronic properties of black phosphorus/blue phosphorus (black-p/blue-p) van der Waals (vdW) p-n heterostructure. An intrinsic type-II band alignment with a direct band gap at Γ point is demonstrated. The spatial separation of the lowest energy electron-hole pairs can be realized and make black-p/blue-p heterostructure a good candidate for applications in optoelectronics. Black-p/blue-p heterostructure exhibits modulation of its band gap and band edges by applied perpendicular electric field ( E⊥ ). This system undergoes a transition from semiconductor to metal when subjected to a strong external E⊥ . The variation of band edges and quasi-Fermi level as a function of E⊥ provides further insight to the linear variation of the band gap. Our calculation results pave the way for experimental research and indicate the great application potential of black-p/blue-p vdW heterostructure in future optoelectronics.

  3. Control of excitons in multi-layer van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Calman, E. V.; Dorow, C. J.; Fogler, M. M.; Butov, L. V.; Hu, S.; Mishchenko, A.; Geim, A. K.

    2016-03-01

    We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of MoS2 and hexagonal boron nitride. The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation.

  4. Rational design and controlled synthesis of Te/Bi2Te3 heterostructure nanostring composites

    NASA Astrophysics Data System (ADS)

    Zhang, Yuzhuo; Chen, Hong; Li, Zhiliang; Huang, Ting; Zheng, Shuqi

    2015-07-01

    Te/Bi2Te3 heterostructure nanostring composites composed of several Bi2Te3 nanoplates, which were perpendicularly strung together by Te nanorod, were rationally designed and synthesized via a facile solvothermal method on a large scale. The X-ray diffraction (XRD) characterization demonstrated that the Bi2Te3 nanoplates were rhombohedral phase and the Te nanorods were trigonal phase. The uniform nanostring morphologies were well characterized by scanning electron microscope (SEM) and transmission electron microscope (TEM). Detailed heterostructures were proved via energy dispersive spectrometer (EDS) and high-resolution transmission electron microscope (HRTEM). The morphology transformation from Bi2Te3 nanoplates to Te/Bi2Te3 heterostructure nanostrings could be controlled by adjusting the ratio of bismuth oxide to tellurium oxide. NaOH, serving as catalytic reduction agent and morphology controlling agent, played an important role in the synthesis of Te/Bi2Te3 heterostructure nanostrings. The reaction mechanism was also proposed to explain the formation process of the composites and the specific function of reagents in this reaction system.

  5. In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

    PubMed Central

    Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

    2014-01-01

    Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with S pecies, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene “painting” on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis. PMID:24728289

  6. Energetics and kinetics of vacancies in monolayer graphene boron nitride heterostructures

    NASA Astrophysics Data System (ADS)

    Ouyang, Bin; Meng, Fanchao; Song, Jun

    2014-12-01

    Graphene and boron nitride (GPBN) heterostructures provide a viable way to realize tunable bandgap, promising new opportunities in graphene-based nanoelectronic and optoelectronic devices. In the present study, we investigated the interplay between vacancies and graphene/h-BN interfaces in monolayer GPBN heterostructures. The energetics and kinetics of monovacancies and divacancies in monolayer GPBN heterostructures were examined using first-principle calculations. The interfaces were shown to be preferential locations for vacancy segregation. Meanwhile the kinetics of vacancies was found to be noticeably modified at interfaces, evidenced by the minimum energy paths and associated migration barriers calculations. The role of interfacial bonding configurations, energy states and polarization on the formation and diffusion of vacancies were discussed. Additionally we demonstrated that it is important to recognize the dissimilarities in the diffusion prefactor for different vacancies for accurate determination of the vacancy diffusion coefficient. Our results provide essential data for the modeling of vacancies in GPBN heterostructures, and important insights towards the precise engineering of defects, interfaces and quantum domains in the design of GPBN-based devices.

  7. Three-dimensional heterostructure of metallic nanoparticles and carbon nanotubes as potential nanofiller

    NASA Astrophysics Data System (ADS)

    Kim, Whi Dong; Huh, Jun Young; Ahn, Ji Young; Lee, Jae Beom; Lee, Dongyun; Hong, Suck Won; Kim, Soo Hyung

    2012-03-01

    The effect of the dimensionality of metallic nanoparticle-and carbon nanotube-based fillers on the mechanical properties of an acrylonitrile butadiene styrene (ABS) polymer matrix was examined. ABS composite films, reinforced with low dimensional metallic nanoparticles (MNPs, 0-D) and carbon nanotubes (CNTs, 1-D) as nanofillers, were fabricated by a combination of wet phase inversion and hot pressing. The tensile strength and elongation of the ABS composite were increased by 39% and 6%, respectively, by adding a mixture of MNPs and CNTs with a total concentration of 2 wt%. However, the tensile strength and elongation of the ABS composite were found to be significantly increased by 62% and 55%, respectively, upon addition of 3-D heterostructures with a total concentration of 2 wt%. The 3-D heterostructures were composed of multiple CNTs grown radially on the surface of MNP cores, resembling a sea urchin. The mechanical properties of the ABS/3-D heterostructured nanofiller composite films were much improved compared to those of an ABS/mixture of 0-D and 1-D nanofillers composite films at various filler concentrations. This suggests that the 3-D heterostructure of the MNPs and CNTs plays a key role as a strong reinforcing agent in supporting the polymer matrix and simultaneously serves as a discrete force-transfer medium to transfer the loaded tension throughout the polymer matrix.

  8. In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

    NASA Astrophysics Data System (ADS)

    Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

    2014-04-01

    Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with S pecies, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene ``painting'' on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis.

  9. Presentation and investigation of a new two dimensional heterostructure phononic crystal to obtain extended band gap

    NASA Astrophysics Data System (ADS)

    Bagheri Nouri, Mohammad; Moradi, Mehran

    2016-05-01

    In this paper, a new heterostructure phononic crystal is introduced. The new heterostructure is composed of square and rhombus phononic crystals. Using finite difference method, a displacement-based algorithm is presented to study elastic wave propagation in the phononic crystal. In contrast with conventional finite difference time domain method, at first by using constitutive equations and strain-displacement relations, elastic wave equations are derived based on displacement. Then, these forms are discretized using finite difference method. By this technique, components of stress tensor can be removed from the updating equations. Since the proposed method needs less elementary arithmetical operations, its computational cost is less than that of the conventional FDTD method. Using the presented displacement-based finite difference time domain algorithm, square phononic crystal, rhombus phononic crystal and the new heterostructure phononic crystal were analyzed. Comparison of transmission spectra of the new heterostructure phononic crystal with those creating lattices, showed that band gap can be extended by using the new structure. Also it was observed that by changing the angular constant of rhombus lattice, a new extended band gap can be achieved.

  10. High-performance polymer semiconducting heterostructure devices by nitrene-mediated photocrosslinking of alkyl side chains.

    PubMed

    Png, Rui-Qi; Chia, Perq-Jon; Tang, Jie-Cong; Liu, Bo; Sivaramakrishnan, Sankaran; Zhou, Mi; Khong, Siong-Hee; Chan, Hardy S O; Burroughes, Jeremy H; Chua, Lay-Lay; Friend, Richard H; Ho, Peter K H

    2010-02-01

    Heterostructures are central to the efficient manipulation of charge carriers, excitons and photons for high-performance semiconductor devices. Although these can be formed by stepwise evaporation of molecular semiconductors, they are a considerable challenge for polymers owing to re-dissolution of the underlying layers. Here we demonstrate a simple and versatile photocrosslinking methodology based on sterically hindered bis(fluorophenyl azide)s. The photocrosslinking efficiency is high and dominated by alkyl side-chain insertion reactions, which do not degrade semiconductor properties. We demonstrate two new back-infiltrated and contiguous interpenetrating donor-acceptor heterostructures for photovoltaic applications that inherently overcome internal recombination losses by ensuring path continuity to give high carrier-collection efficiency. This provides the appropriate morphology for high-efficiency polymer-based photovoltaics. We also demonstrate photopatternable polymer-based field-effect transistors and light-emitting diodes, and highly efficient separate-confinement-heterostructure light-emitting diodes. These results open the way to the general development of high-performance polymer semiconductor heterostructures that have not previously been thought possible. PMID:19966791

  11. Vertical heterostructures of layered metal chalcogenides by van der Waals epitaxy.

    PubMed

    Zhang, Xingwang; Meng, Fei; Christianson, Jeffrey R; Arroyo-Torres, Christian; Lukowski, Mark A; Liang, Dong; Schmidt, J R; Jin, Song

    2014-06-11

    We report a facile chemical vapor deposition (CVD) growth of vertical heterostructures of layered metal dichalcogenides (MX2) enabled by van der Waals epitaxy. Few layers of MoS2, WS2, and WSe2 were grown uniformly onto microplates of SnS2 under mild CVD reaction conditions (<500 °C) and the heteroepitaxy between them was confirmed using cross-sectional transmission electron microscopy (TEM) and unequivocally characterized by resolving the large-area Moiré patterns that appeared on the basal planes of microplates in conventional TEM (nonsectioned). Additional photoluminescence peaks were observed in heterostructures of MoS2-SnS2, which can be understood with electronic structure calculations to likely result from electronic coupling and charge separation between MoS2 and SnS2 layers. This work opens up the exploration of large-area heterostructures of diverse MX2 nanomaterials as the material platform for electronic structure engineering of atomically thin two-dimensional (2D) semiconducting heterostructures and device applications. PMID:24798138

  12. Tuning the Schottky contacts in the phosphorene and graphene heterostructure by applying strain.

    PubMed

    Liu, Biao; Wu, Li-Juan; Zhao, Yu-Qing; Wang, Lin-Zhi; Caii, Meng-Qiu

    2016-07-20

    The structures and electronic properties of the phosphorene and graphene heterostructure are investigated by density functional calculations using the hybrid Heyd-Scuseria-Ernzerhof (HSE) functional. The results show that the intrinsic properties of phosphorene and graphene are preserved due to the weak van der Waals contact. But the electronic properties of the Schottky contacts in the phosphorene and graphene heterostructure can be tuned from p-type to n-type by the in-plane compressive strains from -2% to -4%. After analyzing the total band structure and density of states of P atom orbitals, we find that the Schottky barrier height (SBH) is determined by the P-pz orbitals. What is more, the variation of the work function of the phosphorene monolayer and the graphene electrode and the Fermi level shift are the nature of the transition of Schottky barrier from n-type Schottky contact to p-type Schottky contact in the phosphorene and graphene heterostructure under different in-plane strains. We speculate that these are general results of tuning of the electronic properties of the Schottky contacts in the phosphorene and graphene heterostructure by controlling the in-plane compressive strains to obtain a promising method to design and fabricate a phosphorene-graphene based field effect transistor. PMID:27398801

  13. Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Pierucci, Debora; Henck, Hugo; Naylor, Carl H.; Sediri, Haikel; Lhuillier, Emmanuel; Balan, Adrian; Rault, Julien E.; Dappe, Yannick J.; Bertran, François; Fèvre, Patrick Le; Johnson, A. T. Charlie; Ouerghi, Abdelkarim

    2016-06-01

    Two-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science, as it constitutes an outstanding platform to investigate the interlayer interaction in van der Waals heterostructures. Here, we study large area MoS2-graphene-heterostructures formed by direct transfer of chemical-vapor deposited MoS2 layer onto epitaxial graphene/SiC. We show that via a direct transfer, which minimizes interface contamination, we can obtain high quality and homogeneous van der Waals heterostructures. Angle-resolved photoemission spectroscopy (ARPES) measurements combined with Density Functional Theory (DFT) calculations show that the transition from indirect to direct bandgap in monolayer MoS2 is maintained in these heterostructures due to the weak van der Waals interaction with epitaxial graphene. A downshift of the Raman 2D band of the graphene, an up shift of the A1g peak of MoS2 and a significant photoluminescence quenching are observed for both monolayer and bilayer MoS2 as a result of charge transfer from MoS2 to epitaxial graphene under illumination. Our work provides a possible route to modify the thin film TDMCs photoluminescence properties via substrate engineering for future device design.

  14. In-plane interfacing effects of two-dimensional transition-metal dichalcogenide heterostructures.

    PubMed

    Wei, Wei; Dai, Ying; Huang, Baibiao

    2016-06-21

    In-plane heterostructures of two-dimensional transition-metal dichalcogenides (TMDs) demonstrate the formation of one-dimensional interfaces (or interlines), leading to new exciting properties and device functionalities. In this work, the interfacing effects have been studied in MoS2/WS2 quantum-well and superlattice in-plane heterostructures on the basis of first-principles electronic calculations. In light of the orbital-projected band structures, MoS2/WS2 in-plane heterostructures illustrate type-II band alignments with rather a small band offset for the valence band maximum and a relatively large band offset for the conduction band minimum. Upon increasing the width of TMD constituents, the band gap varies within a small range. In MoS2 and WS2, the surline energy and work function of zigzag edges with S-terminations are obviously higher than those of metal-terminations, and charge transfer from MoS2 to WS2 could be addressed due to the difference in the Fermi level. In-gap levels induced by S vacancies in MoS2/WS2 in-plane heterostructures are discrete and, interestingly, change to consecutive bands due to the built-in electric field. PMID:27220413

  15. Revealing the planar chemistry of two-dimensional heterostructures at the atomic level

    PubMed Central

    Chou, Harry; Ismach, Ariel; Ghosh, Rudresh; Ruoff, Rodney S.; Dolocan, Andrei

    2015-01-01

    Two-dimensional (2D) atomic crystals and their heterostructures are an intense area of study owing to their unique properties that result from structural planar confinement. Intrinsically, the performance of a planar vertical device is linked to the quality of its 2D components and their interfaces, therefore requiring characterization tools that can reveal both its planar chemistry and morphology. Here, we propose a characterization methodology combining (micro-) Raman spectroscopy, atomic force microscopy and time-of-flight secondary ion mass spectrometry to provide structural information, morphology and planar chemical composition at virtually the atomic level, aimed specifically at studying 2D vertical heterostructures. As an example system, a graphene-on-h-BN heterostructure is analysed to reveal, with an unprecedented level of detail, the subtle chemistry and interactions within its layer structure that can be assigned to specific fabrication steps. Such detailed chemical information is of crucial importance for the complete integration of 2D heterostructures into functional devices. PMID:26099196

  16. Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Jia, S.; Sun, H. D.; Du, J. H.; Zhang, Z. K.; Zhang, D. D.; Ma, L. P.; Chen, J. S.; Ma, D. G.; Cheng, H. M.; Ren, W. C.

    2016-05-01

    The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A-1 and 98.2 lm W-1, respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability.The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability

  17. Controllable synthesis of metal selenide heterostructures mediated by Ag2Se nanocrystals acting as catalysts.

    PubMed

    Zhou, Jiangcong; Huang, Feng; Xu, Ju; Wang, Yuansheng

    2013-10-21

    Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se-ZnSe, and even multi-segment heterostructures such as Ag2Se-CdSe-ZnSe and Ag2Se-ZnSe-CdSe, were successfully synthesized. Several interesting features were found in the Ag2Se based heterogrowth. At the initial stage of heterogrowth, a layer of the second phase forms on the surface of an Ag2Se nanosphere, with a curved junction interface between the two phases. With further growth of the second phase, the Ag2Se nanosphere tends to flatten the junction surface by modifying its shape from sphere to hemisphere in order to minimize the conjunct area and thus the interfacial energy. Notably, the crystallographic relationship of the two phases in the heterostructure varies with the lattice parameters of the second phase, in order to reduce the lattice mismatch at the interface. Furthermore, a small lattice mismatch at the interface results in a straight rod-like second phase, while a large lattice mismatch would induce a tortuous product. The reported results may provide a new route for developing novel selenide semiconductor heterostructures which are potentially applicable in optoelectronic, biomedical, photovoltaic and catalytic fields. PMID:24056899

  18. Local Probe Spectroscopy of Two-Dimensional van der Waals Heterostructures

    NASA Astrophysics Data System (ADS)

    Yankowitz, Matthew Abraham

    A large family of materials, collectively known as "van der Waals materials", have attracted enormous research attention over the past decade following the realization that they could be isolated into individual crystalline monolayers, with charge carriers behaving effectively two-dimensionally. More recently, an even larger class of composite materials has been realized, made possible by combining the isolated atomic layers of different materials into "van der Waals heterostructures", which can exhibit electronic and optical behaviors not observed in the parent materials alone. This thesis describes efforts to characterize the atomic-scale structural and electronic properties of these van der Waals materials and heterostructures through scanning tunneling microscopy measurements. The majority of this work addresses the properties of monolayer and few-layer graphene, whose charge carriers are described by massless and massive chiral Dirac Hamiltonians, respectively. In heterostructures with hexagonal boron nitride, an insulating isomorph of graphene, we observe electronic interference patterns between the two materials which depend on their relative rotation. As a result, replica Dirac cones are formed in the valence and conduction bands of graphene, with their energy tuned by the rotation. Further, we are able to dynamically drag the graphene lattice in these heterostructures, owing to an interaction between the scanning probe tip and the domain walls formed by the electronic interference pattern. Similar dragging is observed in domain walls of trilayer graphene, whose electronic properties are found to depend on the stacking configuration of the three layers. Scanning tunneling spectroscopy provides a direct method for visualizing the scattering pathways of electrons in these materials. By analyzing the scattering, we can directly infer properties of the band structures and local environments of these heterostructures. In bilayer graphene, we map the electrically

  19. Transport properties and electroresistance of a manganite based heterostructure: role of the manganite-manganite interface.

    PubMed

    Gadani, Keval; Dhruv, Davit; Joshi, Zalak; Boricha, Hetal; Rathod, K N; Keshvani, M J; Shah, N A; Solanki, P S

    2016-06-29

    In this paper, we report the results of the investigations on the transport properties performed across the manganite-manganite interface in the LaMnO3-δ/La0.7Ca0.3MnO3/LaAlO3 (LMO/LCMO/LAO) heterostructure. The bilayered heterostructure was synthesized by a low cost and simple chemical solution deposition (CSD) method by employing the acetate precursor route. The same LMO/LCMO/LAO heterostructure was also grown using the dry metal oxide chemical vapor deposition (CVD) method and the results of transport characterization have been compared on the basis of wet and dry chemical methods used. XRD Φ-scan measurements were carried out to verify the structural quality and crystallographic orientations of LMO and LCMO manganite layers, for both wet and dry chemical method grown heterostructures. For wet and dry chemical methods, the temperature dependent resistance of the LMO/LCMO interface suggests the metallic nature. The asymmetric I-V curves collected at different temperatures show normal diode characteristics which get transformed to backward diode characteristics at high temperatures under high applied voltages at Vtr for both the methods. The values of Vtr are strongly dependent on the chemical method used. I-V data have been fitted using the Simmons model at different temperatures and discussed in terms of the spin-flip scattering mechanism for both wet and dry chemical method grown heterostructures. The electric field dependent electroresistance (ER) behavior of the presently studied LMO/LCMO manganite-manganite interface, grown using wet and dry chemical methods, has been understood on the basis of complex mechanisms including charge injection, formation of the depletion region, the tunneling effect, thermal processes and junction breakdown and their dependence on the applied electric field, field polarity and temperature studied. PMID:27315551

  20. Ultrafast laser spectroscopy of two-dimensional materials and their heterostructures

    NASA Astrophysics Data System (ADS)

    Zhao, Hui

    2015-03-01

    Monolayer transition metal dichalcogenides are new two-dimensional materials beyond graphene. Recently, extensive studies have revealed several unique properties of these materials and their potential applications in electronic and renewable-energy technologies. Furthermore, it is possible to use these atomic layers as building blocks to fabricate new van der Waals heterostructures with emergent properties. In this talk, I will report our recent ultrafast laser studies of several types of two-dimensional transition metal dichalcogenides and their heterostructures. First, we studied several nonlinear optical processes, such as second harmonic generation, which allows detection of the crystal orientation and symmetry of MoS2 monolayers, and two-photon absorption, which was used to measure the bandgap and exciton binding energy of WSe2 monolayers. Second, we used a transient absorption microscopy technique with high spatial resolution to study exciton dynamics in these materials, and measured their exciton lifetime, diffusion coefficient, and ballistic transport. Third, by performing transient absorption measurements with polarization resolution, we studied spin and valley dynamics of excitons in monolayer MoSe2 and deduced a spin relaxation time of about 9 ps at room temperature. Finally, we used the transient absorption technique with layer selectivity to study heterostructures of graphene-WS2, MoS2-MoSe2,andWS2-MoSe2. We observed ultrafast and efficient charge and exciton transfer across the van der Waals interface in all these structures. The formation of spatially indirect excitons in the transition-metal-dichalcogenide heterostructures was also studied. Furthermore, we found that the optical properties of WS2 can be effectively tuned by carriers in graphene in the graphene-WS2 heterostructure.

  1. Van der Waals Epitaxy of Functional Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Chu, Ying-Hao

    In the diligent pursuit of low-power consumption, multifunctional, and environmentally friendly electronics, more sophisticated requirements on functional materials are on demand. Recently, the discovery of 2D layered materials has created a revolution to this field. Pioneered by graphene, these new 2D materials exhibit abundant unusual physical phenomena that is undiscovered in bulk forms. These materials are characterized with their layer form and almost pure 2D electronic behavior. The confinement of charge and heat transport at such ultrathin planes offers possibilities to overcome the bottleneck of present device development in thickness limitation, and thus push the technologies into next generation. Van der Waals epitaxy, an epitaxial growth method to combine 2D and 3D materials, is one of current reliable manufacturing processes to fabricate 2D materials by growing these 2D materials epitaxially on 3D materials. Then, transferring the 2D materials to the substrates for practical applications. In the mean time, van der Waals epitaxy has also been used to create free-standing 3D materials by growing 3D materials on 2D materials and then removing them from 2D materials since the interfacial boding between 2D and 3D materials should be weak van der Waals bonds. In this study, we intend to take the same concept, but to integrate a family of functional materials in order to open new avenue to flexible electronics. Due to the interplay of lattice, charge, orbital, and spin degrees of freedom, correlated electrons in oxides generate a rich spectrum of competing phases and physical properties. Recently, lots of studies have suggested that oxide heterostructures provide a powerful route to create and manipulate the degrees of freedom and offer new possibilities for next generation devices, thus create a new playground for researchers to investigate novel physics and the emergence of fascinating states of condensed matter. In this talk, we use a 2D layered material as

  2. Characteristics of nanocomposites and semiconductor heterostructure wafers using THz spectroscopy

    NASA Astrophysics Data System (ADS)

    Altan, Hakan

    All optical, THz-Time Domain Spectroscopic (THz-TDS) methods were employed towards determining the electrical characteristics of Single Walled Carbon Nanotubes, Ion Implanted Si nanoclusters and Si1-xGe x, HFO2, SiO2 on p-type Si wafers. For the nanoscale composite materials, Visible Pump/THz Probe spectroscopy measurements were performed after observing that the samples were not sensitive to the THz radiation alone. The results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photo-induced localized states from 0.2 to 0.7THz. The THz transmission is modeled through the photoexcited layer with an effective dielectric constant described by a Drude + Lorentz model and given by Maxwell-Garnett theory. Comparisons are made with other prevalent theories that describe electronic transport. Similar experiments were repeated for ion-implanted, 3-4nm Si nanoclusters in fused silica for which a similar behavior was observed. In addition, a change in reflection from Si1-xGex on Si, 200mm diameter semiconductor heterostructure wafers with 10% or 15% Ge content, was measured using THz-TDS methods. Drude model is utilized for the transmission/reflection measurements and from the reflection data the mobility of each wafer is estimated. Furthermore, the effect of high-kappa dielectric material (HfO2) on the electrical properties of p-type silicon wafers was characterized by utilizing non-contact, differential (pump-pump off) spectroscopic methods to differ between HfO2 and SiO 2 on Si wafers. The measurements are analyzed in two distinct transmission models, where one is an exact representation of the layered structure for each wafer and the other assumed that the response observed from the differential THz transmission was solely due to effects from interfacial traps between the dielectric layer and the substrate. The latter gave a more accurate picture of the carrier dynamics. From these measurements the effect of interfacial defects on

  3. Evidence of Spin-Injection-Induced Cooper Pair Breaking in Perovskite Ferromagnet-Insulator-Superconductor Heterostructures via Pulsed Current Measurements

    NASA Technical Reports Server (NTRS)

    Yeh, N. C.; Samoilov, A. V.; Veasquez, R. P.; Li, Y.

    1998-01-01

    The effect of spin-polarized currents on the critical current densities of cuprate superconductors is investigated in perovskite ferromagnet-insulator-superconductor heterostructures with a pulsed current technique.

  4. Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy.

    PubMed

    Hill, Heather M; Rigosi, Albert F; Rim, Kwang Taeg; Flynn, George W; Heinz, Tony F

    2016-08-10

    Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), we examine the electronic structure of transition metal dichalcogenide heterostructures (TMDCHs) composed of monolayers of MoS2 and WS2. STS data are obtained for heterostructures of varying stacking configuration as well as the individual monolayers. Analysis of the tunneling spectra includes the influence of finite sample temperature, yield information about the quasi-particle bandgaps, and the band alignment of MoS2 and WS2. We report the band gaps of MoS2 (2.16 ± 0.04 eV) and WS2 (2.38 ± 0.06 eV) in the materials as measured on the heterostructure regions and the general type II band alignment for the heterostructure, which shows an interfacial band gap of 1.45 ± 0.06 eV. PMID:27298270

  5. In-plane graphene/boron-nitride heterostructures as an efficient metal-free electrocatalyst for the oxygen reduction reaction.

    PubMed

    Sun, Qiao; Sun, Caixia; Du, Aijun; Dou, Shixue; Li, Zhen

    2016-08-01

    Exploiting metal-free catalysts for the oxygen reduction reaction (ORR) and understanding their catalytic mechanisms are vital for the development of fuel cells (FCs). Our study has demonstrated that in-plane heterostructures of graphene and boron nitride (G/BN) can serve as an efficient metal-free catalyst for the ORR, in which the C-N interfaces of G/BN heterostructures act as reactive sites. The formation of water at the heterointerface is both energetically and kinetically favorable via a four-electron pathway. Moreover, the water formed can be easily released from the heterointerface, and the catalytically active sites can be regenerated for the next cycle. Since G/BN heterostructures with controlled domain sizes have been successfully synthesized in recent reports (e.g. Nat. Nanotechnol., 2013, 8, 119), our results highlight the great potential of such heterostructures as a promising metal-free catalyst for the ORR in FCs. PMID:27396486

  6. Imaging interfacial electrical transport in graphene–MoS{sub 2} heterostructures with electron-beam-induced-currents

    SciTech Connect

    White, E. R. Kerelsky, Alexander; Hubbard, William A.; Regan, B. C.; Dhall, Rohan; Cronin, Stephen B.; Mecklenburg, Matthew

    2015-11-30

    Heterostructure devices with specific and extraordinary properties can be fabricated by stacking two-dimensional crystals. Cleanliness at the inter-crystal interfaces within a heterostructure is crucial for maximizing device performance. However, because these interfaces are buried, characterizing their impact on device function is challenging. Here, we show that electron-beam induced current (EBIC) mapping can be used to image interfacial contamination and to characterize the quality of buried heterostructure interfaces with nanometer-scale spatial resolution. We applied EBIC and photocurrent imaging to map photo-sensitive graphene-MoS{sub 2} heterostructures. The EBIC maps, together with concurrently acquired scanning transmission electron microscopy images, reveal how a device's photocurrent collection efficiency is adversely affected by nanoscale debris invisible to optical-resolution photocurrent mapping.

  7. Boosted Charge Transfer in SnS/SnO2 Heterostructures: Toward High Rate Capability for Sodium-Ion Batteries.

    PubMed

    Zheng, Yang; Zhou, Tengfei; Zhang, Chaofeng; Mao, Jianfeng; Liu, Huakun; Guo, Zaiping

    2016-03-01

    Constructing heterostructures can endow materials with fascinating performance in high-speed electronics, optoelectronics, and other applications owing to the built-in charge-transfer driving force, which is of benefit to the specific charge-transfer kinetics. Rational design and controllable synthesis of nano-heterostructure anode materials with high-rate performance, however, still remains a great challenge. Herein, ultrafine SnS/SnO2 heterostructures were successfully fabricated and showed enhanced charge-transfer capability. The mobility enhancement is attributed to the interface effect of heterostructures, which induces an electric field within the nanocrystals, giving them much lower ion-diffusion resistance and facilitating interfacial electron transport. PMID:26844806

  8. Imaging interfacial electrical transport in graphene-MoS2 heterostructures with electron-beam-induced-currents

    NASA Astrophysics Data System (ADS)

    White, E. R.; Kerelsky, Alexander; Hubbard, William A.; Dhall, Rohan; Cronin, Stephen B.; Mecklenburg, Matthew; Regan, B. C.

    2015-11-01

    Heterostructure devices with specific and extraordinary properties can be fabricated by stacking two-dimensional crystals. Cleanliness at the inter-crystal interfaces within a heterostructure is crucial for maximizing device performance. However, because these interfaces are buried, characterizing their impact on device function is challenging. Here, we show that electron-beam induced current (EBIC) mapping can be used to image interfacial contamination and to characterize the quality of buried heterostructure interfaces with nanometer-scale spatial resolution. We applied EBIC and photocurrent imaging to map photo-sensitive graphene-MoS2 heterostructures. The EBIC maps, together with concurrently acquired scanning transmission electron microscopy images, reveal how a device's photocurrent collection efficiency is adversely affected by nanoscale debris invisible to optical-resolution photocurrent mapping.

  9. Dynamic light-matter coupling across multiple spatial dimensions in a quantum dots-in-a-well heterostructure

    SciTech Connect

    Prasankumar, Rohit P; Taylor, Antoinette J

    2009-01-01

    Ultrafast density-dependent optical spectroscopic measurements on a quantum dots-in-a-well heterostructure reveal several distinctive phenomena, most notably a strong coupling between the quantum well population and light absorption at the quantum dot excited state.

  10. Photosensing performance of branched CdS/ZnO heterostructures as revealed by in situ TEM and photodetector tests

    NASA Astrophysics Data System (ADS)

    Zhang, Chao; Tian, Wei; Xu, Zhi; Wang, Xi; Liu, Jiangwei; Li, Song-Lin; Tang, Dai-Ming; Liu, Dequan; Liao, Meiyong; Bando, Yoshio; Golberg, Dmitri

    2014-06-01

    CdS/ZnO branched heterostructures have been successfully synthesized by combining thermal vapour deposition and a hydrothermal method. Drastic optoelectronic performance enhancement of such heterostructures was revealed, compared to plain CdS nanobelts, as documented by comparative in situ optoelectronic studies on corresponding individual nanostructures using an originally designed laser-compatible transmission electron microscopy (TEM) technique. Furthermore, flexible thin-film based photodetectors based on standard CdS nanobelts and newly prepared CdS/ZnO heterostructures were fabricated on PET substrates, and comparative photocurrent and photo-responsivity measurements thoroughly verified the in situ TEM results. The CdS/ZnO branched heterostructures were found to have better performance than standard CdS nanobelts for optoelectronic applications with respect to the photocurrent to dark current ratio and responsivity.CdS/ZnO branched heterostructures have been successfully synthesized by combining thermal vapour deposition and a hydrothermal method. Drastic optoelectronic performance enhancement of such heterostructures was revealed, compared to plain CdS nanobelts, as documented by comparative in situ optoelectronic studies on corresponding individual nanostructures using an originally designed laser-compatible transmission electron microscopy (TEM) technique. Furthermore, flexible thin-film based photodetectors based on standard CdS nanobelts and newly prepared CdS/ZnO heterostructures were fabricated on PET substrates, and comparative photocurrent and photo-responsivity measurements thoroughly verified the in situ TEM results. The CdS/ZnO branched heterostructures were found to have better performance than standard CdS nanobelts for optoelectronic applications with respect to the photocurrent to dark current ratio and responsivity. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr00963k

  11. Photodiode-Like Behavior and Excellent Photoresponse of Vertical Si/Monolayer MoS2 Heterostructures

    PubMed Central

    Li, Yang; Xu, Cheng-Yan; Wang, Jia-Ying; Zhen, Liang

    2014-01-01

    Monolayer transition metal dichalcogenides (TMDs) and their van der Waals heterostructures have been experimentally and theoretically demonstrated as potential candidates for photovoltaic and optoelectronic devices due to the suitable bandgap and excellent light absorption. In this work, we report the observation of photodiode behavior in (both n- and p- type) silicon/monolayer MoS2 vertical heterostructures. The photocurrent and photoresponsivity of heterostructures photodiodes were dependent both on the incident light wavelength and power density, and the highest photoresponsivity of 7.2 A/W was achieved in n-Si/monolayer MoS2 vertical heterostructures photodiodes. Compared with n-Si/MoS2 heterostructures, the photoresponsivity of p-Si/MoS2 heterostructure was much lower. Kelvin probe microscope (KFM) results demonstrated the more efficient separation of photogenerated excitons in n-Si/MoS2 than that in p-Si/MoS2. Coupling KFM results with band alignments of (p-, n-) Si/MoS2 heterostructures, the origins of photodiode-like phenomena of p-Si/MoS2 and n-Si/MoS2 have been unveiled, that is intrinsic built-in electric field in p-n junction, and modulated barrier height and width at the interface in n-n junction. Our work may benefit to the deep understanding of the integration of two-dimensional materials with more conventional three-dimensional semiconductors, and then contribute to the developments in the area of van der Waals heterostructures. PMID:25424301

  12. Polarization-Induced Charge Distribution at Homogeneous Zincblende/Wurtzite Heterostructural Junctions in ZnSe Nanobelts

    SciTech Connect

    Li, L.; Jin, L.; Wang, J.; Smith, D. J.; Yin, W. J.; Yan, Y.; Sang, H.; Choy, W. C. H.; McCartney, M. R.

    2012-03-08

    Homogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw-tooth-like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization-induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures.

  13. Photodiode-like behavior and excellent photoresponse of vertical Si/monolayer MoS2 heterostructures.

    PubMed

    Li, Yang; Xu, Cheng-Yan; Wang, Jia-Ying; Zhen, Liang

    2014-01-01

    Monolayer transition metal dichalcogenides (TMDs) and their van der Waals heterostructures have been experimentally and theoretically demonstrated as potential candidates for photovoltaic and optoelectronic devices due to the suitable bandgap and excellent light absorption. In this work, we report the observation of photodiode behavior in (both n- and p- type) silicon/monolayer MoS2 vertical heterostructures. The photocurrent and photoresponsivity of heterostructures photodiodes were dependent both on the incident light wavelength and power density, and the highest photoresponsivity of 7.2 A/W was achieved in n-Si/monolayer MoS2 vertical heterostructures photodiodes. Compared with n-Si/MoS2 heterostructures, the photoresponsivity of p-Si/MoS2 heterostructure was much lower. Kelvin probe microscope (KFM) results demonstrated the more efficient separation of photogenerated excitons in n-Si/MoS2 than that in p-Si/MoS2. Coupling KFM results with band alignments of (p-, n-) Si/MoS2 heterostructures, the origins of photodiode-like phenomena of p-Si/MoS2 and n-Si/MoS2 have been unveiled, that is intrinsic built-in electric field in p-n junction, and modulated barrier height and width at the interface in n-n junction. Our work may benefit to the deep understanding of the integration of two-dimensional materials with more conventional three-dimensional semiconductors, and then contribute to the developments in the area of van der Waals heterostructures. PMID:25424301

  14. In-plane graphene/boron-nitride heterostructures as an efficient metal-free electrocatalyst for the oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Sun, Qiao; Sun, Caixia; Du, Aijun; Dou, Shixue; Li, Zhen

    2016-07-01

    Exploiting metal-free catalysts for the oxygen reduction reaction (ORR) and understanding their catalytic mechanisms are vital for the development of fuel cells (FCs). Our study has demonstrated that in-plane heterostructures of graphene and boron nitride (G/BN) can serve as an efficient metal-free catalyst for the ORR, in which the C-N interfaces of G/BN heterostructures act as reactive sites. The formation of water at the heterointerface is both energetically and kinetically favorable via a four-electron pathway. Moreover, the water formed can be easily released from the heterointerface, and the catalytically active sites can be regenerated for the next cycle. Since G/BN heterostructures with controlled domain sizes have been successfully synthesized in recent reports (e.g. Nat. Nanotechnol., 2013, 8, 119), our results highlight the great potential of such heterostructures as a promising metal-free catalyst for the ORR in FCs.Exploiting metal-free catalysts for the oxygen reduction reaction (ORR) and understanding their catalytic mechanisms are vital for the development of fuel cells (FCs). Our study has demonstrated that in-plane heterostructures of graphene and boron nitride (G/BN) can serve as an efficient metal-free catalyst for the ORR, in which the C-N interfaces of G/BN heterostructures act as reactive sites. The formation of water at the heterointerface is both energetically and kinetically favorable via a four-electron pathway. Moreover, the water formed can be easily released from the heterointerface, and the catalytically active sites can be regenerated for the next cycle. Since G/BN heterostructures with controlled domain sizes have been successfully synthesized in recent reports (e.g. Nat. Nanotechnol., 2013, 8, 119), our results highlight the great potential of such heterostructures as a promising metal-free catalyst for the ORR in FCs. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr03288e

  15. Electromechanical properties of MgZnO/ZnO heterostructures on flexible polyimide and stainless steel substrates under flexing

    NASA Astrophysics Data System (ADS)

    Wu, Tsung-Han; Chen, Jian-Zhang; Hsu, Cheng-Che; Cheng, I.-Chun

    2014-06-01

    We investigate the electromechanical properties of radio frequency (rf)-sputtered MgZnO/ZnO heterostructures on flexible polyimide (PI) and stainless steel 304 (StSt304) substrates. By subjecting ZnO to ultra-short (30-40 s) atmospheric pressure plasma jet treatment and prolonged (>3 h) thermal annealing at 300 °C, highly conductive interfaces are induced in rf-sputtered MgZnO/ZnO heterostructures on flexible PI and StSt304 substrates. The electrical properties of on-StSt MgZnO/ZnO annealed at 400 °C for 30 min are evaluated under the inward and outward bending conditions. Furthermore, the electrical properties of on-PI MgZnO/ZnO heterostructures annealed at 300 °C for 3 h are examined under the bending and stretching conditions. Compared with ZnO, MgZnO/ZnO heterostructures show better electrical stability under mechanical flexing; deviations in the electrical properties of MgZnO/ZnO heterostructures occur under larger strain levels. Piezoelectric polarization is induced under flexing, resulting in an increase or decrease in the resistance of MgZnO/ZnO heterostructures.

  16. Processing and Characterization of SrTiO₃-TiO₂ Nanoparticle-Nanotube Heterostructures on Titanium for Biomedical Applications.

    PubMed

    Wang, Yu; Zhang, Dongmei; Wen, Cuie; Li, Yuncang

    2015-07-29

    Surface properties such as physicochemical characteristics and topographical parameters of biomaterials, essentially determining the interaction between the biological cells and the biomaterial, are important considerations in the design of implant materials. In this study, a layer of SrTiO3-TiO2 nanoparticle-nanotube heterostructures on titanium has been fabricated via anodization combined with a hydrothermal process. Titanium was anodized to create a layer of titania (TiO2) nanotubes (TNTs), which was then decorated with a layer of SrTiO3 nanoparticles via hydrothermal processing. SrTiO3-TiO2 heterostructures with high and low volume fraction of SrTiO3 nanoparticle (denoted by 6.3-Sr/TNTs and 1.4-Sr/TNTs) were achieved by using a hydrothermal processing time of 12 and 3 h, respectively. The in vitro biocompatibility of the SrTiO3-TiO2 heterostructures was assessed by using osteoblast cells (SaOS2). Our results indicated that the SrTiO3-TiO2 heterostructures with different volume fractions of SrTiO3 nanoparticles exhibited different Sr ion release in cell culture media and different surface energies. An appropriate volume fraction of SrTiO3 in the heterostructures stimulated the secretion of cell filopodia, leading to enhanced biocompatibility in terms of cell attachment, anchoring, and proliferation on the heterostructure surface. PMID:26136139

  17. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    DOE PAGESBeta

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; et al

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

  18. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    SciTech Connect

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; Cao, Linyou

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.

  19. Facile synthesis of Ag/ZnO heterostructures assisted by UV irradiation: Highly photocatalytic property and enhanced photostability

    SciTech Connect

    Yang, Zhongmei; Zhang, Ping; Ding, Yanhuai; Jiang, Yong; Long, Zhilin; Dai, Wenli

    2011-10-15

    Highlights: {yields} Fabrication of Ag/ZnO heterostructure between the two incompatible phases is realized under UV irradiation in the absence of surfactant. {yields} The synthetic method is facile, low cost, and low carbon, which depends on the photogenerated electrons produced by ZnO under UV light. {yields} Photocatalytic property of the as-synthesized samples is 3.0 times as good as the pure ZnO synthesized under the same condition or the commercial TiO{sub 2} (Degussa, P-25). {yields} The heterostructures exhibit good durability without significant change in the activity even after the third cycle compared to the pure ZnO. -- Abstract: We report a new method to synthesize Ag/ZnO heterostructures assisted by UV irradiation. The formation of Ag/ZnO heterostructures depends on photogenerated electrons produced by ZnO under UV light to reduce high valence silver. Functional property of the Ag/ZnO heterostructures is evaluated by photodegradation of methylene blue (MB) under UV illumination. Results of photodegradation tests reveal that the optimal photocatalytic activity of as-syntheszied samples is about 1.5 times higher than the pure ZnO synthesized in the same condition or commercial TiO{sub 2} (P-25), showing the advantage of the unique structure in the Ag/ZnO heterostructure. Besides, due to the reduced activation of surface oxygen atom, photocatalytic activity of the photocatalysts has no evident decrease even after three recycles.

  20. Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy.

    PubMed

    Samad, Leith; Bladow, Sage M; Ding, Qi; Zhuo, Junqiao; Jacobberger, Robert M; Arnold, Michael S; Jin, Song

    2016-07-26

    The fascinating semiconducting and optical properties of monolayer and few-layer transition metal dichalcogenides, as exemplified by MoS2, have made them promising candidates for optoelectronic applications. Controllable growth of heterostructures based on these layered materials is critical for their successful device applications. Here, we report a direct low temperature chemical vapor deposition (CVD) synthesis of MoS2 monolayer/multilayer vertical heterostructures with layer-controlled growth on a variety of layered materials (SnS2, TaS2, and graphene) via van der Waals epitaxy. Through precise control of the partial pressures of the MoCl5 and elemental sulfur precursors, reaction temperatures, and careful tracking of the ambient humidity, we have successfully and reproducibly grown MoS2 vertical heterostructures from 1 to 6 layers over a large area. The monolayer MoS2 heterostructure was verified using cross-sectional high resolution transmission electron microscopy (HRTEM) while Raman and photoluminescence spectroscopy confirmed the layer-controlled MoS2 growth and heterostructure electronic interactions. Raman, photoluminescence, and energy dispersive X-ray spectroscopy (EDS) mappings verified the uniform coverage of the MoS2 layers. This reaction provides an ideal method for the scalable layer-controlled growth of transition metal dichalcogenide heterostructures via van der Waals epitaxy for a variety of optoelectronic applications. PMID:27373305