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Sample records for complementary metal-oxide-semiconductor biosensor

  1. Complementary metal oxide semiconductor-compatible silicon nanowire biofield-effect transistors as affinity biosensors.

    PubMed

    Duan, Xuexin; Rajan, Nitin K; Izadi, Mohammad Hadi; Reed, Mark A

    2013-11-01

    Affinity biosensors use biorecognition elements and transducers to convert a biochemical event into a recordable signal. They provides the molecule binding information, which includes the dynamics of biomolecular association and dissociation, and the equilibrium association constant. Complementary metal oxide semiconductor-compatible silicon (Si) nanowires configured as a field-effect transistor (NW FET) have shown significant advantages for real-time, label-free and highly sensitive detection of a wide range of biomolecules. Most research has focused on reducing the detection limit of Si-NW FETs but has provided less information about the real binding parameters of the biomolecular interactions. Recently, Si-NW FETs have been demonstrated as affinity biosensors to quantify biomolecular binding affinities and kinetics. They open new applications for NW FETs in the nanomedicine field and will bring such sensor technology a step closer to commercial point-of-care applications. This article summarizes the recent advances in bioaffinity measurement using Si-NW FETs, with an emphasis on the different approaches used to address the issues of sensor calibration, regeneration, binding kinetic measurements, limit of detection, sensor surface modification, biomolecule charge screening, reference electrode integration and nonspecific molecular binding. PMID:24156488

  2. Real-time, multiplexed electrochemical DNA detection using an active complementary metal-oxide-semiconductor biosensor array with integrated sensor electronics.

    PubMed

    Levine, Peter M; Gong, Ping; Levicky, Rastislav; Shepard, Kenneth L

    2009-03-15

    Optical biosensing based on fluorescence detection has arguably become the standard technique for quantifying extents of hybridization between surface-immobilized probes and fluorophore-labeled analyte targets in DNA microarrays. However, electrochemical detection techniques are emerging which could eliminate the need for physically bulky optical instrumentation, enabling the design of portable devices for point-of-care applications. Unlike fluorescence detection, which can function well using a passive substrate (one without integrated electronics), multiplexed electrochemical detection requires an electronically active substrate to analyze each array site and benefits from the addition of integrated electronic instrumentation to further reduce platform size and eliminate the electromagnetic interference that can result from bringing non-amplified signals off chip. We report on an active electrochemical biosensor array, constructed with a standard complementary metal-oxide-semiconductor (CMOS) technology, to perform quantitative DNA hybridization detection on chip using targets conjugated with ferrocene redox labels. A 4 x 4 array of gold working electrodes and integrated potentiostat electronics, consisting of control amplifiers and current-input analog-to-digital converters, on a custom-designed 5 mm x 3 mm CMOS chip drive redox reactions using cyclic voltammetry, sense DNA binding, and transmit digital data off chip for analysis. We demonstrate multiplexed and specific detection of DNA targets as well as real-time monitoring of hybridization, a task that is difficult, if not impossible, with traditional fluorescence-based microarrays. PMID:19054661

  3. High-temperature Complementary Metal Oxide Semiconductors (CMOS)

    NASA Technical Reports Server (NTRS)

    Mcbrayer, J. D.

    1981-01-01

    The results of an investigation into the possibility of using complementary metal oxide semiconductor (CMOS) technology for high temperature electronics are presented. A CMOS test chip was specifically developed as the test bed. This test chip incorporates CMOS transistors that have no gate protection diodes; these diodes are the major cause of leakage in commercial devices.

  4. The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

    NASA Technical Reports Server (NTRS)

    Bouldin, D. L.; Eastes, R. W.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

    1979-01-01

    The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

  5. Single-photon imaging in complementary metal oxide semiconductor processes

    PubMed Central

    Charbon, E.

    2014-01-01

    This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging and biomedical imaging, to name just a few. The paper focuses on architectures that are best suited to those applications and the trade-offs they generate. In this context, architectures are described that efficiently collect the output of single pixels when designed in large arrays. Off-chip readout circuit requirements are described for a variety of applications in physics, medicine and the life sciences. Owing to the dynamic nature of SPADs, designs featuring a large number of SPADs require careful analysis of the target application for an optimal use of silicon real estate and of limited readout bandwidth. The paper also describes the main trade-offs involved in architecting such chips and the solutions adopted with focus on scalability and miniaturization. PMID:24567470

  6. Single-photon imaging in complementary metal oxide semiconductor processes.

    PubMed

    Charbon, E

    2014-03-28

    This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging and biomedical imaging, to name just a few. The paper focuses on architectures that are best suited to those applications and the trade-offs they generate. In this context, architectures are described that efficiently collect the output of single pixels when designed in large arrays. Off-chip readout circuit requirements are described for a variety of applications in physics, medicine and the life sciences. Owing to the dynamic nature of SPADs, designs featuring a large number of SPADs require careful analysis of the target application for an optimal use of silicon real estate and of limited readout bandwidth. The paper also describes the main trade-offs involved in architecting such chips and the solutions adopted with focus on scalability and miniaturization. PMID:24567470

  7. Printable Ultrathin Metal Oxide Semiconductor-Based Conformal Biosensors.

    PubMed

    Rim, You Seung; Bae, Sang-Hoon; Chen, Huajun; Yang, Jonathan L; Kim, Jaemyung; Andrews, Anne M; Weiss, Paul S; Yang, Yang; Tseng, Hsian-Rong

    2015-12-22

    Conformal bioelectronics enable wearable, noninvasive, and health-monitoring platforms. We demonstrate a simple and straightforward method for producing thin, sensitive In2O3-based conformal biosensors based on field-effect transistors using facile solution-based processing. One-step coating via aqueous In2O3 solution resulted in ultrathin (3.5 nm), high-density, uniform films over large areas. Conformal In2O3-based biosensors on ultrathin polyimide films displayed good device performance, low mechanical stress, and highly conformal contact determined using polydimethylsiloxane artificial skin having complex curvilinear surfaces or an artificial eye. Immobilized In2O3 field-effect transistors with self-assembled monolayers of NH2-terminated silanes functioned as pH sensors. Functionalization with glucose oxidase enabled d-glucose detection at physiologically relevant levels. The conformal ultrathin field-effect transistor biosensors developed here offer new opportunities for future wearable human technologies. PMID:26498319

  8. Retinal Stimulation on Rabbit Using Complementary Metal Oxide Semiconductor Based Multichip Flexible Stimulator toward Retinal Prosthesis

    NASA Astrophysics Data System (ADS)

    Tokuda, Takashi; Asano, Ryosuke; Sugitani, Sachie; Taniyama, Mari; Terasawa, Yasuo; Nunoshita, Masahiro; Nakauchi, Kazuaki; Fujikado, Takashi; Tano, Yasuo; Ohta, Jun

    2008-04-01

    The Functionality of a complementary metal oxide semiconductor (CMOS) LSI-based, multichip flexible retinal stimulator was demonstrated in retinal stimulation experiments on rabbits. A 1×4-configured multichip stimulator was fabricated for application to experiments on animals. An experimental procedure including surgical operations was developed, and retinal stimulation was performed with the fabricated multichip stimulator. Neural responses on the visual cortex were successfully evoked by the fabricated stimulator. The stimulator is confirmed to be applicable to acute animal experiments.

  9. DNA detection using a complementary metal-oxide semiconductor ring oscillator circuit

    NASA Astrophysics Data System (ADS)

    Kocanda, Martin; Abdel-Motaleb, Ibrahim

    2010-10-01

    A DNA detection scheme has been implemented that utilizes a simple complementary metal-oxide semiconductor (CMOS) ring oscillator circuit. The detector oscillates at a fundamental frequency when using a nonhybridized single-strand DNA probe layer. Upon hybridization with a complimentary DNA strand, the oscillator output exhibits an increased frequency shift, indicating a genetic match. The probe assembly consists of a p-GaAs substrate containing a pulsed laser deposition-applied barium strontium titanate layer and an overlying sodium dodecyl sulfate lipid layer that serves to anchor a functionalized oligonucleotide probe. The oscillator circuit consisting of cascaded discrete complimentary n-channel and p-channel metal-oxide-semiconductor field-effect transistors was implemented using passive components arranged in a T-network to provide the associated fundamental time constant.

  10. Complementary metal-oxide-semiconductor compatible 1060 nm photodetector with ultrahigh gain under low bias.

    PubMed

    Hall, David; Li, Baoxia; Liu, Yu-Hsin; Yan, Lujiang; Lo, Yu-Hwa

    2015-10-01

    Falling on the tail of the absorption spectrum of silicon, 1060 nm Si detectors often suffer from low responsivity unless an exceedingly thick absorption layer is used, a design that requires high operation voltage and high purity epitaxial or substrate material. We report an all-silicon 1060 nm detector with ultrahigh gain to allow for low operation voltage (<4  V) and thin (200 nm) effective absorption layer, using the recently discovered cycling excitation process. With 1% external quantum efficiency, a responsivity of 93 A/W was demonstrated in a p/n junction device compatible with the complementary metal-oxide-semiconductor process. PMID:26421551

  11. Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

    SciTech Connect

    Forsen, E.; Abadal, G.; Ghatnekar-Nilsson, S.; Teva, J.; Verd, J.; Sandberg, R.; Svendsen, W.; Perez-Murano, F.; Esteve, J.; Figueras, E.; Campabadal, F.; Montelius, L.; Barniol, N.; Boisen, A.

    2005-07-25

    Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4 ag/Hz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip.

  12. III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si.

    PubMed

    Svensson, Johannes; Dey, Anil W; Jacobsson, Daniel; Wernersson, Lars-Erik

    2015-12-01

    III-V semiconductors have attractive transport properties suitable for low-power, high-speed complementary metal-oxide-semiconductor (CMOS) implementation, but major challenges related to cointegration of III-V n- and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) on low-cost Si substrates have so far hindered their use for large scale logic circuits. By using a novel approach to grow both InAs and InAs/GaSb vertical nanowires of equal length simultaneously in one single growth step, we here demonstrate n- and p-type III-V MOSFETs monolithically integrated on a Si substrate with high I(on)/I(off) ratios using a dual channel, single gate-stack design processed simultaneously for both types of transistors. In addition, we demonstrate fundamental CMOS logic gates, such as inverters and NAND gates, which illustrate the viability of our approach for large scale III-V MOSFET circuits on Si. PMID:26595174

  13. High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

    PubMed

    Yu, Lili; Zubair, Ahmad; Santos, Elton J G; Zhang, Xu; Lin, Yuxuan; Zhang, Yuhao; Palacios, Tomás

    2015-08-12

    Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials. PMID:26192468

  14. Energy harvesting thermoelectric generators manufactured using the complementary metal oxide semiconductor process.

    PubMed

    Yang, Ming-Zhi; Wu, Chyan-Chyi; Dai, Ching-Liang; Tsai, Wen-Jung

    2013-01-01

    This paper presents the fabrication and characterization of energy harvesting thermoelectric micro generators using the commercial complementary metal oxide semiconductor (CMOS) process. The micro generator consists of 33 thermocouples in series. Thermocouple materials are p-type and n-type polysilicon since they have a large Seebeck coefficient difference. The output power of the micro generator depends on the temperature difference in the hot and cold parts of the thermocouples. In order to increase this temperature difference, the hot part of the thermocouples is suspended to reduce heat-sinking. The micro generator needs a post-CMOS process to release the suspended structures of hot part, which the post-process includes an anisotropic dry etching to etch the sacrificial oxide layer and an isotropic dry etching to remove the silicon substrate. Experiments show that the output power of the micro generator is 9.4 mW at a temperature difference of 15 K. PMID:23396193

  15. DNA-decorated carbon-nanotube-based chemical sensors on complementary metal oxide semiconductor circuitry

    NASA Astrophysics Data System (ADS)

    Chen, Chia-Ling; Yang, Chih-Feng; Agarwal, Vinay; Kim, Taehoon; Sonkusale, Sameer; Busnaina, Ahmed; Chen, Michelle; Dokmeci, Mehmet R.

    2010-03-01

    We present integration of single-stranded DNA (ss-DNA)-decorated single-walled carbon nanotubes (SWNTs) onto complementary metal oxide semiconductor (CMOS) circuitry as nanoscale chemical sensors. SWNTs were assembled onto CMOS circuitry via a low voltage dielectrophoretic (DEP) process. Besides, bare SWNTs are reported to be sensitive to various chemicals, and functionalization of SWNTs with biomolecular complexes further enhances the sensing specificity and sensitivity. After decorating ss-DNA on SWNTs, we have found that the sensing response of the gas sensor was enhanced (up to ~ 300% and ~ 250% for methanol vapor and isopropanol alcohol vapor, respectively) compared with bare SWNTs. The SWNTs coupled with ss-DNA and their integration on CMOS circuitry demonstrates a step towards realizing ultra-sensitive electronic nose applications.

  16. DNA-decorated carbon-nanotube-based chemical sensors on complementary metal oxide semiconductor circuitry.

    PubMed

    Chen, Chia-Ling; Yang, Chih-Feng; Agarwal, Vinay; Kim, Taehoon; Sonkusale, Sameer; Busnaina, Ahmed; Chen, Michelle; Dokmeci, Mehmet R

    2010-03-01

    We present integration of single-stranded DNA (ss-DNA)-decorated single-walled carbon nanotubes (SWNTs) onto complementary metal oxide semiconductor (CMOS) circuitry as nanoscale chemical sensors. SWNTs were assembled onto CMOS circuitry via a low voltage dielectrophoretic (DEP) process. Besides, bare SWNTs are reported to be sensitive to various chemicals, and functionalization of SWNTs with biomolecular complexes further enhances the sensing specificity and sensitivity. After decorating ss-DNA on SWNTs, we have found that the sensing response of the gas sensor was enhanced (up to approximately 300% and approximately 250% for methanol vapor and isopropanol alcohol vapor, respectively) compared with bare SWNTs. The SWNTs coupled with ss-DNA and their integration on CMOS circuitry demonstrates a step towards realizing ultra-sensitive electronic nose applications. PMID:20139486

  17. Flexible complementary metal oxide semiconductor microelectrode arrays with applications in single cell characterization

    NASA Astrophysics Data System (ADS)

    Pajouhi, H.; Jou, A. Y.; Jain, R.; Ziabari, A.; Shakouri, A.; Savran, C. A.; Mohammadi, S.

    2015-11-01

    A highly flexible microelectrode array with an embedded complementary metal oxide semiconductor (CMOS) instrumentation amplifier suitable for sensing surfaces of biological entities is developed. The array is based on ultrathin CMOS islands that are thermally isolated from each other and are interconnected by meandered nano-scale wires that can adapt to cellular surfaces with micro-scale curvatures. CMOS temperature sensors are placed in the islands and are optimally biased to have high temperature sensitivity. While no live cell thermometry is conducted, a measured temperature sensitivity of 0.15 °C in the temperature range of 35 to 40 °C is achieved by utilizing a low noise CMOS lock-in amplifier implemented in the same technology. The monolithic nature of CMOS sensors and amplifier circuits and their versatile flexible interconnecting wires overcome the sensitivity and yield limitations of microelectrode arrays fabricated in competing technologies.

  18. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    NASA Astrophysics Data System (ADS)

    Torres Sevilla, G. A.; Almuslem, A. S.; Gumus, A.; Hussain, A. M.; Cruz, M. E.; Hussain, M. M.

    2016-02-01

    Thinned silicon based complementary metal oxide semiconductor (CMOS) electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOS inverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible silicon CMOS inverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  19. Hybrid Integration of Graphene Analog and Silicon Complementary Metal-Oxide-Semiconductor Digital Circuits.

    PubMed

    Hong, Seul Ki; Kim, Choong Sun; Hwang, Wan Sik; Cho, Byung Jin

    2016-07-26

    We demonstrate a hybrid integration of a graphene-based analog circuit and a silicon-based digital circuit in order to exploit the strengths of both graphene and silicon devices. This mixed signal circuit integration was achieved using a three-dimensional (3-D) integration technique where a graphene FET multimode phase shifter is fabricated on top of a silicon complementary metal-oxide-semiconductor field-effect transistor (CMOS FET) ring oscillator. The process integration scheme presented here is compatible with the conventional silicon CMOS process, and thus the graphene circuit can successfully be integrated on current semiconductor technology platforms for various applications. This 3-D integration technique allows us to take advantage of graphene's excellent inherent properties and the maturity of current silicon CMOS technology for future electronics. PMID:27403730

  20. Modeling of Total Ionizing Dose Effects in Advanced Complementary Metal-Oxide-Semiconductor Technologies

    NASA Astrophysics Data System (ADS)

    Sanchez Esqueda, Ivan

    2011-12-01

    The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation

  1. Laser Doppler blood flow complementary metal oxide semiconductor imaging sensor with analog on-chip processing

    SciTech Connect

    Gu Quan; Hayes-Gill, Barrie R.; Morgan, Stephen P

    2008-04-20

    A 4x4 pixel array with analog on-chip processing has been fabricated within a 0.35 {mu}m complementary metal oxide semiconductor process as a prototype sensor for laser Doppler blood flow imaging. At each pixel the bandpass and frequency weighted filters necessary for processing laser Doppler blood flow signals have been designed and fabricated. Because of the space constraints of implementing an accurate {omega}{sup 0.5} filter at the pixel level, this has been approximated using the ''roll off'' of a high-pass filter with a cutoff frequency set at 10 kHz. The sensor has been characterized using a modulated laser source. Fixed pattern noise is present that is demonstrated to be repeatable across the array and can be calibrated. Preliminary blood flow results on a finger before and after occlusion demonstrate that the sensor array provides the potential for a system that can be scaled to a larger number of pixels for blood flow imaging.

  2. Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

    NASA Astrophysics Data System (ADS)

    Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2015-10-01

    We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

  3. Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

    NASA Astrophysics Data System (ADS)

    Hongda, Chen; Zan, Zhang; Beiju, Huang; Luhong, Mao; Zanyun, Zhang

    2015-12-01

    Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. Project supported by the National Basic Research Program of China (No. 2011CBA00608), the National Natural Science Foundation of China (Nos. 61178051, 61321063, 61335010, 61178048, 61275169), and the National High Technology Research and Development Program of China (Nos. 2013AA013602, 2013AA031903, 2013AA032204).

  4. Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.

    PubMed

    Nam, SungWoo; Jiang, Xiaocheng; Xiong, Qihua; Ham, Donhee; Lieber, Charles M

    2009-12-15

    Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arsenide (n-InAs) and p-type germanium/silicon core/shell (p-Ge/Si) nanowire (NW) field-effect transistors (FETs). The DC voltage output (V(out)) versus input (V(in)) response of vertically interconnected CMOS inverters showed sharp switching at close to the ideal value of one-half the supply voltage and, moreover, exhibited substantial DC gain of approximately 45. The gain and the rail-to-rail output switching are consistent with the large noise margin and minimal static power consumption of CMOS. Vertically interconnected, three-stage CMOS ring oscillators were also fabricated by using layer-1 InAs NW n-FETs and layer-2 Ge/Si NW p-FETs. Significantly, measurements of these circuits demonstrated stable, self-sustained oscillations with a maximum frequency of 108 MHz, which represents the highest-frequency integrated circuit based on chemically synthesized nanoscale materials. These results highlight the flexibility of bottom-up assembly of distinct nanoscale materials and suggest substantial promise for 3D integrated circuits. PMID:19940239

  5. Testability of VLSI (Very Large Scale Integration) leakage faults in CMOS (Complementary Metal Oxide Semiconductor)

    NASA Astrophysics Data System (ADS)

    Malaiya, Y. K.; Su, S. Y. H.

    1983-09-01

    With the advent of VLSI (Very Large Scale Integration), the importance of CMOS (Complementary Metal Oxide Semiconductor) technology has increased. CMOS offers some very significant advantages over NMOS, and has emerged very competitive. Therefore, testability of CMOS devices is of considerable importance. CMOS devices exhibit some failure modes which are not adequately represented by the classical stuck-at fault model. A new fault model is introduced here to represent such faults. Leakage faults are specifically examined in this report, such faults increase the static supply current (which is ordinarily quite low) substantially. A leakage testing experiment consists of applying different vectors to the circuit, and in each case measuring the static supply current. This experimentally obtained data is then analyzed to obtain fault-related information. Leakage testing offers extra testability without any additional pins. It can detect some faults which cannot be detected by the conventional testing. Test generation for several basic CMOS structures is considered. Correspondence between leakage testing and conventional testing is studied. Two methods for analyzing experimental data are presented. Available experimental data was analyzed to obtain statistical information.

  6. Organic-on-silicon complementary metal-oxide-semiconductor colour image sensors.

    PubMed

    Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

    2015-01-01

    Complementary metal-oxide-semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor. PMID:25578322

  7. Fabrication of Back-Side Illuminated Complementary Metal Oxide Semiconductor Image Sensor Using Compliant Bump

    NASA Astrophysics Data System (ADS)

    Naoya Watanabe,; Isao Tsunoda,; Takayuki Takao,; Koichiro Tanaka,; Tanemasa Asano,

    2010-04-01

    We fabricated a back-side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor in which a very-thin BSI photodiode array chip was stacked on a CMOS read-out circuit chip by compliant bumps. Cone-shaped bumps made of Au were prepared as the compliant bumps. The base diameter was 10-12 μm and the height was 9-10 μm. To fabricate the BSI CMOS image sensor, we developed a novel thin-chip assembly process. The key features of the process are as follows: preparation of a photodiode array wafer and a CMOS read-out circuit wafer, Au cone bump formation, bonding to support glass, thinning of the photodiode array wafer to 21 μm, through silicon via (TSV) formation using Cu electroplating, formation of back-side electrodes, transfer of the photodiode array wafer to a polymer support tape, dicing of the photodiode array wafer, separation of support tape, formation of Ni-Au bumps, dicing of CMOS read-out circuit wafer, and three-dimensional (3D) chip-stacking. The BSI CMOS image sensor thus fabricated has the following specifications: number of active pixels is 16,384 (128 × 128), photodiode size is approximately 18 μm square, photodiode pitch is 24 μm, and fill factor is approximately 55%. No defects were observed in the obtained image frames.

  8. Fabrication of Back-Side Illuminated Complementary Metal Oxide Semiconductor Image Sensor Using Compliant Bump

    NASA Astrophysics Data System (ADS)

    Watanabe, Naoya; Tsunoda, Isao; Takao, Takayuki; Tanaka, Koichiro; Asano, Tanemasa

    2010-04-01

    We fabricated a back-side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor in which a very-thin BSI photodiode array chip was stacked on a CMOS read-out circuit chip by compliant bumps. Cone-shaped bumps made of Au were prepared as the compliant bumps. The base diameter was 10-12 µm and the height was 9-10 µm. To fabricate the BSI CMOS image sensor, we developed a novel thin-chip assembly process. The key features of the process are as follows: preparation of a photodiode array wafer and a CMOS read-out circuit wafer, Au cone bump formation, bonding to support glass, thinning of the photodiode array wafer to 21 µm, through silicon via (TSV) formation using Cu electroplating, formation of back-side electrodes, transfer of the photodiode array wafer to a polymer support tape, dicing of the photodiode array wafer, separation of support tape, formation of Ni-Au bumps, dicing of CMOS read-out circuit wafer, and three-dimensional (3D) chip-stacking. The BSI CMOS image sensor thus fabricated has the following specifications: number of active pixels is 16,384 (128 ×128), photodiode size is approximately 18 µm square, photodiode pitch is 24 µm, and fill factor is approximately 55%. No defects were observed in the obtained image frames.

  9. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

    SciTech Connect

    Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G.; Sharples, Steve D.

    2010-02-15

    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  10. Chip-scale fluorescence microscope based on a silo-filter complementary metal-oxide semiconductor image sensor.

    PubMed

    Ah Lee, Seung; Ou, Xiaoze; Lee, J Eugene; Yang, Changhuei

    2013-06-01

    We demonstrate a silo-filter (SF) complementary metal-oxide semiconductor (CMOS) image sensor for a chip-scale fluorescence microscope. The extruded pixel design with metal walls between neighboring pixels guides fluorescence emission through the thick absorptive filter to the photodiode of a pixel. Our prototype device achieves 13 μm resolution over a wide field of view (4.8 mm × 4.4 mm). We demonstrate bright-field and fluorescence longitudinal imaging of living cells in a compact, low-cost configuration. PMID:23722754

  11. Novel Implantation Method to Improve Machine-Model Electrostatic Discharge Robustness of Stacked N-Channel Metal-Oxide Semiconductors (NMOS) in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductors (CMOS) Technology

    NASA Astrophysics Data System (ADS)

    Ker, Ming-Dou; Hsu, Hsin-Chyh; Peng, Jeng-Jie

    2002-11-01

    A novel ion implantation method for electrostatic discharge protection, often called as ESD implantation, is proposed to significantly improve machine-model (MM) ESD robustness of N-channel metal-oxide semiconductors (NMOS) device in stacked configuration (stacked NMOS). By using this ESD implantation method, the ESD current is discharged far away from the surface channel of NMOS, therefore the stacked NMOS in the mixed-voltage I/O interface can sustain a much higher ESD level, especially under the MM ESD stress. The MM ESD robustness of the stacked NMOS with a device dimension of W/L=300 μm/0.5 μm for each NMOS has been successfully improved from the original 358 V to become 491 V in a 0.25-μm complementary metal-oxide semiconductors (CMOS) process.

  12. Complementary Metal Oxide Semiconductor-Compatible Back-Side-Illuminated Photodiode for Optoelectronic Integrated Circuit Devices

    NASA Astrophysics Data System (ADS)

    Shin, Sang-Baie; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2013-04-01

    In this study, the prototype optoelectronic integrated circuits (OEICs) operating with optical input signals were designed and fabricated. A back-side-illuminated (BSI) photodiode was designed and demonstrated by a newly proposed practical method, utilizing micro-electromechanical systems (MEMS) and postcomplement metal oxide semiconductor (CMOS) processes. Additional fabrication processes for the BSI photodiode were proposed and described in detail in this paper. The operational amplifier for amplification of the optical current by the BSI photodiode as the transimpedance amplifier was designed and fabricated. And the pulse width modulation (PWM) wave generator was implemented for modulating optical signals as the prototype OEIC device. The maximum quantum efficiency of 28.4% was obtained from the fabricated BSI photodiode. Output signals of PWM were successfully controlled by the generated optical current of the BSI photodiode.

  13. Integrated Bio-Imaging Sensor Array with Complementary Metal-Oxide-Semiconductor Cascode Source-Drain Follower

    NASA Astrophysics Data System (ADS)

    Hirokazu Matsumoto,; Junichi Tsukada,; Hiroaki Ozawa,; Shigeyasu Uno,; Kazuo Nakazato,; Nao Terasaki,; Noritaka Yamamoto,; Takashi Hiraga,; Masako Iwai,; Masae Konno,; Kohsuke Ito,; Yasunori Inoue,

    2010-04-01

    A new bio-imaging sensor with photosystem I (PSI) of Thermosynechococcus elongatus and complementary metal-oxide-semiconductor (CMOS) circuits is demonstrated. Photons are converted into electrons by PSI, and electrons are detected as an electric signal by a CMOS integrated circuit. For a sensor circuit, a 4 × 4 sensor array with a CMOS source-drain follower is designed and fabricated by a standard CMOS process. An extended-gate electrode and an SU-8 passivation layer are formed on a CMOS chip by a post-CMOS process, and PSI is electrostatically fixed on the electrode. A 3× 4 image of the pattern of light illuminated on a chip is taken with the sensor array, where four cells are used as reference cells.

  14. Integrated Bio-Imaging Sensor Array with Complementary Metal-Oxide-Semiconductor Cascode Source-Drain Follower

    NASA Astrophysics Data System (ADS)

    Matsumoto, Hirokazu; Tsukada, Junichi; Ozawa, Hiroaki; Uno, Shigeyasu; Nakazato, Kazuo; Terasaki, Nao; Yamamoto, Noritaka; Hiraga, Takashi; Iwai, Masako; Konno, Masae; Ito, Kohsuke; Inoue, Yasunori

    2010-04-01

    A new bio-imaging sensor with photosystem I (PSI) of Thermosynechococcus elongatus and complementary metal-oxide-semiconductor (CMOS) circuits is demonstrated. Photons are converted into electrons by PSI, and electrons are detected as an electric signal by a CMOS integrated circuit. For a sensor circuit, a 4 ×4 sensor array with a CMOS source-drain follower is designed and fabricated by a standard CMOS process. An extended-gate electrode and an SU-8 passivation layer are formed on a CMOS chip by a post-CMOS process, and PSI is electrostatically fixed on the electrode. A 3×4 image of the pattern of light illuminated on a chip is taken with the sensor array, where four cells are used as reference cells.

  15. A complementary metal-oxide-semiconductor compatible monocantilever 12-point probe for conductivity measurements on the nanoscale

    NASA Astrophysics Data System (ADS)

    Gammelgaard, L.; Bøggild, P.; Wells, J. W.; Handrup, K.; Hofmann, Ph.; Balslev, M. B.; Hansen, J. E.; Petersen, P. R. E.

    2008-09-01

    We present a complementary metal-oxide-semiconductor compatible, nanoscale 12-point-probe based on TiW electrodes placed on a SiO2 monocantilever. Probes are mass fabricated on Si wafers by a combination of electron beam and UV lithography, realizing TiW electrode tips with a width down to 250nm and a probe pitch of 500nm. In-air four-point measurements have been performed on indium tin oxide, ruthenium, and titanium-tungsten, showing good agreement with values obtained by other four-point probes. In-vacuum four-point resistance measurements have been performed on clean Bi(111) using different probe spacings. The results show the expected behavior for bulk Bi, indicating that the contribution of electronic surface states to the transport properties is very small.

  16. Ratiometric, filter-free optical sensor based on a complementary metal oxide semiconductor buried double junction photodiode.

    PubMed

    Yung, Ka Yi; Zhan, Zhiyong; Titus, Albert H; Baker, Gary A; Bright, Frank V

    2015-07-16

    We report a complementary metal oxide semiconductor integrated circuit (CMOS IC) with a buried double junction (BDJ) photodiode that (i) provides a real-time output signal that is related to the intensity ratio at two emission wavelengths and (ii) simultaneously eliminates the need for an optical filter to block Rayleigh scatter. We demonstrate the BDJ platform performance for gaseous NH3 and aqueous pH detection. We also compare the BDJ performance to parallel results obtained by using a slew scanned fluorimeter (SSF). The BDJ results are functionally equivalent to the SSF results without the need for any wavelength filtering or monochromators and the BDJ platform is not prone to errors associated with source intensity fluctuations or sensor signal drift. PMID:26073812

  17. Complementary Metal Oxide Semiconductor Based Multimodal Sensor for In vivo Brain Function Imaging with a Function for Simultaneous Cell Stimulation

    NASA Astrophysics Data System (ADS)

    Tagawa, Ayato; Mitani, Masahiro; Minami, Hiroki; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Ohta, Jun

    2010-04-01

    We have developed a multimodal complementary metal oxide semiconductor (CMOS) sensor device embedded with Au electrodes for fluorescent imaging and cell stimulation in the deep brain of mice. The Au electrodes were placed on the pixel array of the image sensor. Windows over the photodiodes were opened in the electrode area for simultaneous fluorescent imaging and cell stimulation in the same area of the brain tissue. The sensor chip was shaped like a shank and was packaged by two packaging methods for high strength or minimal invasion. The experimental results showed that the 90 ×90 µm2 Au electrodes with windows were capable of injecting theta burst stimulation (TBS)-like current pulses at 0.2-1 mA in a saline solution. We successfully demonstrated that fluorescent imaging and TBS-like current injection can be simultaneously performed in the electrode area of a brain phantom.

  18. Complementary Metal Oxide Semiconductor Based Multimodal Sensor for In vivo Brain Function Imaging with a Function for Simultaneous Cell Stimulation

    NASA Astrophysics Data System (ADS)

    Ayato Tagawa,; Masahiro Mitani,; Hiroki Minami,; Toshihiko Noda,; Kiyotaka Sasagawa,; Takashi Tokuda,; Jun Ohta,

    2010-04-01

    We have developed a multimodal complementary metal oxide semiconductor (CMOS) sensor device embedded with Au electrodes for fluorescent imaging and cell stimulation in the deep brain of mice. The Au electrodes were placed on the pixel array of the image sensor. Windows over the photodiodes were opened in the electrode area for simultaneous fluorescent imaging and cell stimulation in the same area of the brain tissue. The sensor chip was shaped like a shank and was packaged by two packaging methods for high strength or minimal invasion. The experimental results showed that the 90 × 90 μm2 Au electrodes with windows were capable of injecting theta burst stimulation (TBS)-like current pulses at 0.2-1 mA in a saline solution. We successfully demonstrated that fluorescent imaging and TBS-like current injection can be simultaneously performed in the electrode area of a brain phantom.

  19. Complementary Metal-Oxide-Semiconductor Integrated Carbon Nanotube Arrays: Toward Wide-Bandwidth Single-Molecule Sensing Systems.

    PubMed

    Warren, Steven B; Vernick, Sefi; Romano, Ethan; Shepard, Kenneth L

    2016-04-13

    There is strong interest in realizing genomic molecular diagnostic platforms that are label-free, electronic, and single-molecule. One attractive transducer for such efforts is the single-molecule field-effect transistor (smFET), capable of detecting a single electronic charge and realized with a point-functionalized exposed-gate one-dimensional carbon nanotube field-effect device. In this work, smFETs are integrated directly onto a custom complementary metal-oxide-semiconductor chip, which results in an array of up to 6000 devices delivering a measurement bandwidth of 1 MHz. In a first exploitation of these high-bandwidth measurement capabilities, point functionalization through electrochemical oxidation of the devices is observed with microsecond temporal resolution, which reveals complex reaction pathways with resolvable scattering signatures. High-rate random telegraph noise is detected in certain oxidized devices, further illustrating the measurement capabilities of the platform. PMID:26999579

  20. Highly sensitive sensors for alkali metal ions based on complementary-metal-oxide-semiconductor-compatible silicon nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Guo-Jun; Agarwal, Ajay; Buddharaju, Kavitha D.; Singh, Navab; Gao, Zhiqiang

    2007-06-01

    Highly sensitive sensors for alkali metal ions based on complementary-metal-oxide- semiconductor-compatible silicon nanowires (SiNWs) with crown ethers covalently immobilized on their surface are presented. A densely packed organic monolayer terminated with amine groups is introduced to the SiNW surface via hydrosilylation. Amine-modified crown ethers, acting as sensing elements, are then immobilized onto the SiNWs through a cross-linking reaction with the monolayer. The crown ether-functionalized SiNWs recognize Na+ and K+ according to their complexation ability to the crown ethers. The SiNW sensors are highly selective and capable of achieving an ultralow detection limit down to 50nM, over three orders of magnitude lower than that of conventional crown ether-based ion-selective electrodes.

  1. A low-voltage complementary metal-oxide semiconductor adapter circuit suitable for input rail-to-rail operation

    NASA Astrophysics Data System (ADS)

    Tadić, Nikša; Zogović, Milena; Banjević, Mirjana; Zimmermann, Horst

    2010-11-01

    In this article, a low-voltage complementary metal-oxide semiconductor (CMOS) input signal adapter (ISA) suitable for input rail-to-rail operation of various types of analogue basic building blocks is presented. The adapter acts as a pre-stage with infinite input resistance and linear transfer characteristics. Its input signal is translated into the region fitting the operating range of the following stage. The generality of the proposed method is proven through the application of the ISA in different types of analogue basic building blocks designed in 0.5 μm CMOS technology. They are the following: below-negative-rail-to-above-positive-rail voltage-controlled transconductor, quasi rail-to-rail voltage-controlled resistor (VCR), rail-to-rail operational amplifier (OA) and quasi rail-to-rail second generation current conveyor. The proposed negative resistance quasi rail-to-rail VCR and rail-to-rail OA have been used in a Sallen and Key band-pass filter. All of these analogue basic building blocks and their applications in the form of the Sallen and Key band-pass filter operate from a single supply of 1.5 V. Simulation results confirm the predictions of the analysis performed.

  2. Exploiting sub-20-nm complementary metal-oxide semiconductor technology challenges to design affordable systems-on-chip

    NASA Astrophysics Data System (ADS)

    Vaidyanathan, Kaushik; Zhu, Qiuling; Liebmann, Lars; Lai, Kafai; Wu, Stephen; Liu, Renzhi; Liu, Yandong; Strojwas, Andzrej; Pileggi, Larry

    2015-01-01

    For the past four decades, cost and features have driven complementary metal-oxide semiconductor (CMOS) scaling. Severe lithography and material limitations seen below the 20-nm node, however, are challenging the fundamental premise of affordable CMOS scaling. Just continuing to co-optimize leaf cell circuit and layout designs with process technology does not enable us to exploit the challenges of sub-20-nm CMOS. For affordable scaling, it is imperative to work past sub-20-nm technology impediments while exploiting its features. To this end, we propose to broaden the scope of design technology co-optimization (DTCO) to be more holistic by including microarchitecture design and computer-aided design, along with circuits, layout, and process technology. Furthermore, we undertook such a holistic DTCO for all critical design elements such as embedded memory, standard cell logic, analog components, and physical synthesis in a 14-nm process. Measurements results from experimental designs in a representative 14-nm process from IBM demonstrate the efficacy of the proposed approach.

  3. Monolithically integrated avalanche photodiode receiver in 0.35 μm bipolar complementary metal oxide semiconductor

    NASA Astrophysics Data System (ADS)

    Jukić, Tomislav; Steindl, Bernhard; Enne, Reinhard; Zimmermann, Horst

    2015-11-01

    We present the first optoelectronic integrated bipolar complementary metal oxide semiconductor (BiCMOS) receiver chip with an avalanche photodiode (APD). A large 200-μm-diameter APD connected to a high-speed transimpedance amplifier designed for a 2-Gbps optical wireless communication system is proposed. The complete chip was realized in a 0.35-μm silicon BiCMOS technology. Due to the thick intrinsic zone and multiplication gain, the responsivity of the APD reaches a value of up to 120 A/W for a wavelength of 675 nm. Furthermore, the capacitance of the APD is <500 fF for reverse bias voltages above 18 V. The receiver has a supply voltage of 3.3 V with a current consumption of 76 mA. The delivered 50-Ω single-ended output swing is 550 mVpp and the overall transimpedance is 260 kΩ with 1.02-GHz bandwidth. The achieved data rate is 2 Gbps with a sensitivity of -30.3 dBm at a bit error rate <10-9.

  4. Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics

    SciTech Connect

    Lu, Y.; Fung, S.; Wang, Q.; Horsley, D. A.; Tang, H.; Boser, B. E.; Tsai, J. M.; Daneman, M.

    2015-06-29

    This paper presents an ultrasonic fingerprint sensor based on a 24 × 8 array of 22 MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 μm pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be ∼14 kPa with a 28 V input, in reasonable agreement with predication from analytical calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 × 8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10 mm × 8 mm) at a 1.2 mm distance from the array.

  5. Effects of Low-k Stack Structure on Performance of Complementary Metal Oxide Semiconductor Devices and Chip Package Interaction Failure

    NASA Astrophysics Data System (ADS)

    Tagami, Masayoshi; Inoue, Naoya; Ueki, Makoto; Narihiro, Mitsuru; Tada, Munehiro; Yamamoto, Hironori; Ito, Fuminori; Furutake, Naoya; Saito, Shinobu; Onodera, Takahiro; Takeuchi, Tsuneo; Hayashi, Yoshihiro

    2012-09-01

    Low capacitance and highly reliable Cu dual-damascene (DD) interconnects have been developed with self-organized “seamless low-k SiOCH stacks” (SEALS) structure. A carbon-rich sub-nano porous SiOCH (k=2.5) was directly stacked on an oxygen-rich porous SiOCH (k=2.7) in the SEALS structure, without a hard-mask (HM) and etch-stop (ES) layer of SiO2. The effective k-value (keff) of the Cu DD interconnect including the SiCN capping layer (k=4.9) was reduced to 2.9 compared to 3.4 on a conventional hybrid structure with SiO2-HM and ES, which had been used in 65-nm-node mass production. The interconnect delay of a 45-nm-node complementary metal oxide semiconductor (CMOS) ring oscillator (RO) was reduced by 15% referring to that of the conventional hybrid structure. Interconnect reliabilities, such as the interline time dependent dielectric breakdown (TDDB) and thermal cycles, were unchanged from those of the conventional hybrid interconnects. No failure was detected for chip package interaction (CPI) during reliability tests in a plastic ball grid array (PBGA) package. SEALS is a promising structure for scaled down ultra large scale integrations (ULSIs) for highly reliable and high speed operation, and low power consumption.

  6. Performance characterization of microtomography with complementary metal-oxide-semiconductor detectors for computer-aided defect inspection

    SciTech Connect

    Kim, Ho Kyung; Yun, Seungman; Han, Jong Chul; Youn, Hanbean; Cho, Min Kook; Lim, Chang Hwy; Heo, Sung Kyn; Shon, Cheol-Soon; Kim, Seong-Sik; Cho, Bong Hae; Achterkirchen, Thorsten Graeve

    2009-05-01

    We developed a computer-aided defect inspection system based on computed tomography (CT). The system consists of a homemade small cone-beam CT (CBCT) system and a graphical toolbox, which is used to extract a computer-aided design (CAD) model from the CT data. In the small CBCT system, the x-ray imaging detector is based on a complementary metal-oxide-semiconductor photodiode array in conjunction with a scintillator. Imaging performance of the detector was evaluated in terms of modulation-transfer function, noise-power spectrum, and detective quantum efficiency. The tomographic imaging performance of the small CBCT system was evaluated in terms of signal-to-noise ratio and contrast-to-noise ratio. The graphical toolbox to support defect inspection incorporates various functional tools such as volume rendering, segmentation, triangular-mesh data generation, and data reduction. All the tools have been integrated in a graphical-user interface form. The developed system can provide rapid visual inspection as well as quantitative evaluation of defects by comparing the extracted CAD file with the original file, if available, of an object. The performance of the developed system is demonstrated with experimental CT volume data.

  7. An optical relay approach to very low cost hybrid polymer-complementary metal-oxide semiconductor electrophoresis instrumentation.

    PubMed

    Hall, Gordon H; Sloan, David L; Ma, Tianchi; Couse, Madeline H; Martel, Stephane; Elliott, Duncan G; Glerum, D Moira; Backhouse, Christopher J

    2014-07-01

    Electrophoresis is an integral part of many molecular diagnostics protocols and an inexpensive implementation would greatly facilitate point-of-care (POC) applications. However, the high instrumentation cost presents a substantial barrier, much of it associated with fluorescence detection. The cost of such systems could be substantially reduced by placing the fluidic channel and photodiode directly above the detector in order to collect a larger portion of the fluorescent light. In future, this could be achieved through the integration and monolithic fabrication of photoresist microchannels on complementary metal-oxide semiconductor microelectronics (CMOS). However, the development of such a device is expensive due to high non-recurring engineering costs. To facilitate that development, we present a system that utilises an optical relay to integrate low-cost polymeric microfluidics with a CMOS chip that provides a photodiode, analog-digital conversion and a standard serial communication interface. This system embodies an intermediate level of microelectronic integration, and significantly decreases development costs. With a limit of detection of 1.3±0.4nM of fluorescently end-labeled deoxyribonucleic acid (DNA), it is suitable for diagnostic applications. PMID:24856905

  8. A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process

    NASA Astrophysics Data System (ADS)

    Kiumarsi, Hamid; Mizuochi, Yutaka; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

    2012-02-01

    A three-stage inverter-based stacked power amplifier (PA) in complementary metal oxide semiconductor (CMOS) process is proposed to overcome low breakdown voltage problem of scaled CMOS technologies. Unlike previous reported stacked PAs which radio frequency choke (RFC) was inevitable, we proposed stacked nMOS and pMOS transistors which effectively eliminates use of RFC. By properly setting self-biased circuits' and transistors' parameters, output impedance could reach up to 50 Ω which together with not employing the RFC makes this topology very appealing for the scalable PA realization. As a proof of concept, a three-stage PA using 65 nm CMOS technology is implemented. With a 6 V power supply for the third stage, the fabricated PA shows a small-signal gain of 36 dB, a saturated output power of 16 dBm and a maximum power added efficiency of 10% at 1 GHz. Using a 7.5 V of power supply, saturated output power reaches 18 dBm. To the best of our knowledge, this is the first reported inverter-based stacked PA.

  9. Label-free electrical detection of cardiac biomarker with complementary metal-oxide semiconductor-compatible silicon nanowire sensor arrays.

    PubMed

    Chua, Jay Huiyi; Chee, Ru-Ern; Agarwal, Ajay; Wong, She Mein; Zhang, Guo-Jun

    2009-08-01

    Arrays of highly ordered silicon nanowire (SiNW) clusters are fabricated using complementary metal-oxide semiconductor (CMOS) field effect transistor-compatible technology, and the ultrasensitive, label-free, electrical detection of cardiac biomarker in real time using the array sensor is presented. The successful detection of human cardiac troponin-T (cTnT) has been demonstrated in an assay buffer solution of concentration down to 1 fg/mL, as well as in an undiluted human serum environment of concentration as low as 30 fg/mL. The high specificity, selectivity, and swift response time of the SiNWs to the presence of ultralow concentrations of a target protein in a biological analyte solution, even in the presence of a high total protein concentration, paves the way for the development of a medical diagnostic system for point-of-care application that is able to provide an early and accurate indication of cardiac cellular necrosis. PMID:20337397

  10. Chemistry integrated circuit: chemical system on a complementary metal oxide semiconductor integrated circuit.

    PubMed

    Nakazato, Kazuo

    2014-03-28

    By integrating chemical reactions on a large-scale integration (LSI) chip, new types of device can be created. For biomedical applications, monolithically integrated sensor arrays for potentiometric, amperometric and impedimetric sensing of biomolecules have been developed. The potentiometric sensor array detects pH and redox reaction as a statistical distribution of fluctuations in time and space. For the amperometric sensor array, a microelectrode structure for measuring multiple currents at high speed has been proposed. The impedimetric sensor array is designed to measure impedance up to 10 MHz. The multimodal sensor array will enable synthetic analysis and make it possible to standardize biosensor chips. Another approach is to create new functional devices by integrating molecular systems with LSI chips, for example image sensors that incorporate biological materials with a sensor array. The quantum yield of the photoelectric conversion of photosynthesis is 100%, which is extremely difficult to achieve by artificial means. In a recently developed process, a molecular wire is plugged directly into a biological photosynthetic system to efficiently conduct electrons to a gold electrode. A single photon can be detected at room temperature using such a system combined with a molecular single-electron transistor. PMID:24567475

  11. An in-depth noise model for giant magnetoresistance current sensors for circuit design and complementary metal-oxide-semiconductor integration

    NASA Astrophysics Data System (ADS)

    Roldán, A.; Roldán, J. B.; Reig, C.; Cardoso, S.; Cardoso, F.; Ferreira, R.; Freitas, P. P.

    2014-05-01

    Full instrumentation bridges based on spin valve of giant magnetoresistance and magnetic tunnel junction devices have been microfabricated and experimentally characterized from the DC and noise viewpoint. A more realistic model of these devices was obtained in this work, an electrical and thermal model previously developed have been improved in such a way that noise effects are also included. We have implemented the model in a circuit simulator and reproduced the experimental measurements accurately. This provides a more realistic and complete tool for circuit design where magnetoresistive elements are combined with well-known complementary metal-oxide-semiconductor modules.

  12. Electrical Characteristics of Low-Temperature Polycrystalline Silicon Complementary Metal-Oxide-Semiconductor Thin-Film Transistors with Six-Step Photomask Structure

    NASA Astrophysics Data System (ADS)

    Lee, Sang-Jin; Park, Jae-Hoon; Oh, Kum-Mi; Lee, Seok-Woo; Lee, Kyung-Eon; Shin, Woo-Sup; Jun, Myung-chul; Yang, Yong-Suk; Hwang, Yong-Kee

    2011-06-01

    We propose two types of six-step photomask, complementary metal-oxide-semiconductor (CMOS), thin-film transistor (TFT) PCT device structures in order to simplify their fabrication process compared with that of conventional, low-temperature, polycrystalline silicon (LTPS) CMOS TFT devices. The initial charge transfer characteristics of both types of six-step PCT are equivalent to those of the conventional nine-step PCT. Both types of six-step PCT are comparable to the conventional nine-step mask lightly doped drain (LDD) device in terms of the dc device lifetime of over 10 years at Vds=5 V for line inversion driving, which is the normally recognized duration time for semiconducting devices.

  13. Ramp Slope Built-in-Self-Calibration Scheme for Single-Slope Column Analog-to-Digital Converter Complementary Metal-Oxide-Semiconductor Image Sensor

    NASA Astrophysics Data System (ADS)

    Ham, Seogheon; Jung, Wunki; Lee, Dongmyung; Lee, Yonghee; Han, Gunhee

    2006-02-01

    The conversion gain of a single-slope analog-to-digital converter (ADC) suffers from the process and frequency variations. This ADC gain variation eventually limits the performance of image signal processing (ISP) in a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS). This paper proposes a ramp slope built-in-self-calibration (BISC) scheme for a CIS. The CIS with the proposed BISC was fabricated with a 0.35-μm CMOS process. The measurement results show that the proposed architecture effectively calibrates the ramp slope against the process and the clock frequency variation. The silicon area overhead is less than 0.7% of the full chip area.

  14. Thick detection zone single-photon avalanche diode fabricated in 0.35 μm complementary metal-oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Steindl, Bernhard; Enne, Reinhard; Zimmermann, Horst

    2015-05-01

    An avalanche photodiode (APD) fabricated in 0.35 μm high-voltage complementary metal-oxide semiconductor (CMOS) technology, which was originally optimized for linear mode applications, is characterized in Geiger mode operation. This work shows that the used design concept is also suitable for single-photon detection applications and achieves a photon detection efficiency of 22.1% at 785 nm due to a thick detection zone and 3.5 V excess bias. At this operation point, the single-photon APD achieves good results regarding afterpulsing probability (3.4%) and dark count rate (46 kHz) with respect to the large active diameter of 86 μm.

  15. 1.2-17.6 GHz Ring-Oscillator-Based Phase-Locked Loop with Injection Locking in 65 nm Complementary Metal Oxide Semiconductor

    NASA Astrophysics Data System (ADS)

    Lee, Sang-yeop; Ito, Hiroyuki; Amakawa, Shuhei; Tanoi, Satoru; Ishihara, Noboru; Masu, Kazuya

    2012-02-01

    A wide-frequency-range phase-locked loop (PLL) with subharmonic injection locking is proposed. The PLL is equipped with a wide tunable ring-type voltage-controlled oscillator (ring VCO), frequency dividers, and a doubler in order to the widen injection-locked tuning range (ILTR). In addition, high-frequency injection signals are used to improve phase noise, which is supposed to be generated by a reference PLL. The proposed circuit is fabricated by using a 65 nm Si complementary metal oxide semiconductor (CMOS) process. The measured frequency tuning range is from 1.2 to 17.6 GHz with a frequency doubler and dividers. The phase noise at 14.4 GHz (=32×450 MHz) with injection locking was -109 dBc/Hz, which shows a 21-dB reduction compared with that in the case without injection locking.

  16. 0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

    NASA Astrophysics Data System (ADS)

    Kamimura, Tatsuya; Lee, Sang-yeop; Tanoi, Satoru; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

    2012-04-01

    A low power-supply voltage and high-frequency quadrature voltage-controlled oscillator (QVCO) using a combination of capacitor coupling and transformer feedback techniques is presented. The capacitor coupling technique can boost the transconductance of the LC-VCO core and coupling transconductance of QVCO at high frequency. Also, this technique can improve the quality factor of the QVCO at high frequency with low power-supply voltage, compared with the conventional QVCO. In addition, the capacitor coupling QVCO with transformer feedback can improve the quality factor of QVCO. Using this topology, the QVCO is able to operate at over 10 GHz with lower power-supply voltage. Implemented in the 90 nm complementary metal oxide semiconductor (CMOS) process, the proposed QVCO measures 1-MHz-offset phase noise of -94 dBc/Hz at 13 GHz while consuming 0.68 mW from a 0.1 V power-supply.

  17. Channel Strain in Advanced Complementary Metal-Oxide-Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction

    NASA Astrophysics Data System (ADS)

    Toda, Akio; Nakamura, Hidetatsu; Fukai, Toshinori; Ikarashi, Nobuyuki

    2008-04-01

    Using high-precision nano-beam electron diffraction (NBD), we clarified the influences of stress liner and the stress of shallow trench isolation on channel strain in advanced metal-oxide-semiconductor field effect transistors (MOSFETs). For systematic strain measurements, we improved the precision of NBD by observing large reciprocal lattice vectors under appropriate diffraction conditions. The absolute value of the channel strain increases by stress liner as gate length decreases, although the drive current increase due to stress liner saturates at a shorter channel length. The normal strain in the gate length direction is inversely proportional to the distance from the gate electrode to the shallow trench isolation (STI). Furthermore, the relationship between measured channel strain induced by STI and drive current change was shown. The drive current of n- and p-MOSFET changes about 5% with 2×10-3 channel strain variation. This result suggests that reducing the shallow trench isolation stress is effective for controlling the drive current change, depending on the active region layout. We conclude that the experimental measurement of channel strain is necessary for device and circuit design.

  18. Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-κ/Metal Gate Complementary Metal-Oxide-Semiconductor Device and Inverter Circuit

    NASA Astrophysics Data System (ADS)

    Li, Yiming; Cheng, Hui-Wen

    2012-04-01

    This work estimates electrical and transfer-characteristic fluctuations in 16-nm-gate high-κ/metal gate (HKMG) metal-oxide-semiconductor field effect transistor (MOSFET) devices and inverter circuit induced by random interface traps (ITs) at high-κ/silicon interface. Randomly generated devices with two-dimensional (2D) ITs at HfO2/Si interface are incorporated into quantum-mechanically corrected 3D device simulation. Device characteristics, as influenced by different degrees of fluctuation, are discussed in relation to random ITs near source and drain ends. Owing to a decreasing penetration of electric field from drain to source, the drain induced barrier lowering (DIBL) of the edvice decreases when the number of ITs increases. In contrast to random-dopant fluctuation, the screening effect of device's inversion layer cannot effectively screen potential's variation; thus, devices still have noticeable fluctuation of gate capacitance (CG) under high gate bias. The cutoff frequency decreases as increasing the number of ITs owing to the decreasing transconductance and increasing CG. Decreasing on-state current and increasing CG further result in increasing intrinsic gate delay time (τ) when the number of ITs increases. The fluctuation magnitude of DIBL, cutoff frequency, and τ above is increased as the number of ITs increases. Even for cases with the same number of random ITs, noise margins (NMs) of the 16-nm-gate complementary metal-oxide-semiconductor inverter circuit are still quite different due to the different distribution of random ITs. The NMs of inverter circuit increase as the number of random ITs increases; however, the NMs' fluctuations are increased due to the more sources of fluctuation at HfO2/Si interface of HKMG devices.

  19. A 128 × 128 Pixel Complementary Metal Oxide Semiconductor Image Sensor with an Improved Pixel Architecture for Detecting Modulated Light Signals

    NASA Astrophysics Data System (ADS)

    Yamamoto, Koji; Oya, Yu; Kagawa, Keiichiro; Nunoshita, Masahiro; Ohta, Jun; Watanabe, Kunihiro

    A complementary metal oxide semiconductor (CMOS) image sensor for the detection of modulated light under background illumination has been developed. When an object is illuminated by a modulated light source under background illumination the sensor enables the object alone to be captured. This paper describes improvements in pixel architecture for reducing fixed pattern noise (FPN) and improving the sensitivity of the image sensor. The improved 128 × 128 pixel CMOS image sensor with a column parallel analog-to-digital converter (ADC) circuit was fabricated using 0.35-mm CMOS technology. The resulting captured images are shown and the properties of improved pixel architecture are described. The image sensor has FPN of 1/28 that of the previous image sensor and an improved pixel architecture comprising a common in-pixel amp and a correlated double sampling (CDS) circuit. The use of a split photogate increases the sensitivity of the image sensor to 1.3 times that of the previous image sensor.

  20. A 3.5-4.5 GHz Complementary Metal-Oxide-Semiconductor Ultrawideband Receiver Frontend Low-Noise Amplifier with On-Chip Integrated Antenna for Interchip Communication

    NASA Astrophysics Data System (ADS)

    Azhari, Afreen; Kimoto, Kentaro; Sasaki, Nobuo; Kikkawa, Takamaro

    2010-04-01

    Chip-to-chip ultrawideband (UWB) wireless interconnections are essential for reducing resistance capacitance (RC) delay in wired interconnections and three-dimensional (3D) highly integrated packaging. In this study, we demonstrated a wireless interchip signal transmission between two on-chip meander antennas on printed circuit board (PCB) for 1 to 20 mm transmission distances where the low power gain of each antenna due to a lossy Si substrate has been amplified by a low-noise amplifier (LNA). The measured result shows that the LNA produces 26 dB of improvement in antenna power gain at 4.5 GHz on a lossy Si substrate. Moreover, a Gaussian monocycle pulse with a center frequency of 2.75 GHz was also received by an on-chip antenna and amplified by the LNA. The LNA was integrated with an on-chip antenna on a Si substrate with a resistivity of 10 Ω·cm using 180 nm complementary metal-oxide-semiconductor (CMOS) technology. The investigated system is required for future single chip transceiver front ends, integrated with an on-chip antenna for 3D mounting on a printed circuit (PC) board.

  1. Real time in vivo imaging and measurement of serine protease activity in the mouse hippocampus using a dedicated complementary metal-oxide semiconductor imaging device.

    PubMed

    Ng, David C; Tamura, Hideki; Tokuda, Takashi; Yamamoto, Akio; Matsuo, Masamichi; Nunoshita, Masahiro; Ishikawa, Yasuyuki; Shiosaka, Sadao; Ohta, Jun

    2006-09-30

    The aim of the present study is to demonstrate the application of complementary metal-oxide semiconductor (CMOS) imaging technology for studying the mouse brain. By using a dedicated CMOS image sensor, we have successfully imaged and measured brain serine protease activity in vivo, in real-time, and for an extended period of time. We have developed a biofluorescence imaging device by packaging the CMOS image sensor which enabled on-chip imaging configuration. In this configuration, no optics are required whereby an excitation filter is applied onto the sensor to replace the filter cube block found in conventional fluorescence microscopes. The fully packaged device measures 350 microm thick x 2.7 mm wide, consists of an array of 176 x 144 pixels, and is small enough for measurement inside a single hemisphere of the mouse brain, while still providing sufficient imaging resolution. In the experiment, intraperitoneally injected kainic acid induced upregulation of serine protease activity in the brain. These events were captured in real time by imaging and measuring the fluorescence from a fluorogenic substrate that detected this activity. The entire device, which weighs less than 1% of the body weight of the mouse, holds promise for studying freely moving animals. PMID:16542733

  2. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

    NASA Astrophysics Data System (ADS)

    Hoidn, Oliver R.; Seidler, Gerald T.

    2015-08-01

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2-6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ˜20% quantum efficiency at 2.6 keV with ˜190 eV resolution and a 100 kHz maximum detection rate. The detector platform's useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.

  3. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers.

    PubMed

    Hoidn, Oliver R; Seidler, Gerald T

    2015-08-01

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2-6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform's useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry. PMID:26329247

  4. Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.

    PubMed

    Zhao, Yudan; Li, Qunqing; Xiao, Xiaoyang; Li, Guanhong; Jin, Yuanhao; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2016-02-23

    We have proposed and fabricated stable and repeatable, flexible, single-walled carbon nanotube (SWCNT) thin film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) integrated circuits based on a three-dimensional (3D) structure. Two layers of SWCNT-TFT devices were stacked, where one layer served as n-type devices and the other one served as p-type devices. On the basis of this method, it is able to save at least half of the area required to construct an inverter and make large-scale and high-density integrated CMOS circuits easier to design and manufacture. The 3D flexible CMOS inverter gain can be as high as 40, and the total noise margin is more than 95%. Moreover, the input and output voltage of the inverter are exactly matched for cascading. 3D flexible CMOS NOR, NAND logic gates, and 15-stage ring oscillators were fabricated on PI substrates with high performance as well. Stable electrical properties of these circuits can be obtained with bending radii as small as 3.16 mm, which shows that such a 3D structure is a reliable architecture and suitable for carbon nanotube electrical applications in complex flexible and wearable electronic devices. PMID:26768020

  5. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

    SciTech Connect

    Hoidn, Oliver R.; Seidler, Gerald T.

    2015-08-15

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2–6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform’s useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.

  6. Advocating Noise as an Agent for Ultra-Low Energy Computing: Probabilistic Complementary Metal-Oxide-Semiconductor Devices and Their Characteristics

    NASA Astrophysics Data System (ADS)

    Korkmaz, Pinar; Akgul, Bilge E. S.; Palem, Krishna V.; Chakrapani, Lakshmi N.

    2006-04-01

    Noise immunity and low-energy computing have become limiting factors in the semiconductor roadmap as transistor feature sizes shrink. The subject of our study is the probabilistic switch, implemented in the complementary metal-oxide-semiconductor (CMOS) domain, referred to as a probabilistic CMOS (PCMOS) switch, whose behavior is rendered probabilistic by noise. In conducting this study, we are motivated by the possibility of using such probabilistic switches to realize ultra-low energy computing. Based on PCMOS switches realized using 0.5 and 0.25 μm processes, we present detailed analytical models, subsequently verified through HSpice simulations. We consider the thermal noise and power supply noise as our sources for probabilistic behavior. Through one interesting aspect of the study, we characterize the effects of the noise sampling frequency and the output sampling frequency on probabilistic behavior. Finally, we briefly outline the opportunity that such probabilistic switches offer to ultra low-energy computing through the concept of a probabilistic system-on-a-chip (PSoC) architecture (that is based on PCMOS switches); such architectures can achieve significant energy savings and performance improvements at the application level.

  7. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    PubMed

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-01

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs. PMID:26348408

  8. The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction

    NASA Astrophysics Data System (ADS)

    Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; Kao, S.-C.

    2012-05-01

    Based on the stress extraction and measurement by atomic force microscope-Raman technique with the nanometer level space resolution, the high compressive stress about 550 MPa on the Si active region (OD) is observed for the current complementary metal-oxide-semiconductor (CMOS) transistor. During the thermal budget for the standard manufacture process of the current CMOS transistor, the difference of thermal expansion coefficients between Si and Shallow Trench Isolation (STI) oxide results in this high compressive stress in Si OD and further degrades the electron carrier mobility seriously. In order to relax this intrinsic processed compressive stress in Si OD and try to recover this performance loss, the novel process is proposed in this work in addition to the usage of one-side pad SiN layer. With this novel process of additional N-ion implantation (IMP) treatment in STI oxide, it can be found that the less compressive stress about 438 MPa in Si OD can be achieved by the smaller difference of thermal expansion coefficients between Si and N-doped SiO2 STI oxide. The formation of Si-N bonding in N-doped SiO2 STI region can be monitored by Fourier transform infrared spectroscopy spectra and thermal expansion coefficients for Si, SiO2, and SiN are 2.6 ppm/K, 0.4 ppm/K, and 2.87 ppm/K, respectively. The effective relaxation of intrinsic processed compressive stress in Si OD about 112 MPa (from 550 MPa to 438 MPa) by this proposed additional N IMP treatment contributes ˜14% electron carrier mobility enhancement/recovery. The experimental electrical data agree well with the theoretical piezoelectricity calculation for the strained-Si theory.

  9. Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

    NASA Astrophysics Data System (ADS)

    Wang, G. L.; Moeen, M.; Abedin, A.; Kolahdouz, M.; Luo, J.; Qin, C. L.; Zhu, H. L.; Yan, J.; Yin, H. Z.; Li, J. F.; Zhao, C.; Radamson, H. H.

    2013-09-01

    SiGe has been widely used for source/drain (S/D) engineering in pMOSFETs to enhance channel mobility. In this study, selective Si1-xGex growth (0.25 ≤ x ≤ 0.35) with boron concentration of 1-3 × 1020 cm-3 in the process for 22 nm node complementary metal-oxide semiconductor (CMOS) has been investigated and optimized. The growth parameters were carefully tuned to achieve deposition of high quality and highly strained material. The thermal budget was decreased to 800 °C to suppress dopant diffusion, to minimize Si loss in S/D recesses, and to preserve the S/D recess shape. Two layers of Si1-xGex were deposited: a bottom layer with high Ge content (x = 0.35) which filled the recess and a cap layer with low Ge content (x = 0.25) which was elevated in the S/D regions. The elevated SiGe cap layer was intended to be consumed during the Ni-silicidation process in order to avoid strain reduction in the channel region arising from strain relaxation in SiGe S/D. In this study, a kinetic gas model was also applied to predict the pattern dependency of the growth and to determine the epi-profile in different transistor arrays. The input parameters include growth temperature, partial pressures of reactant gases, and chip layout. By using this model, the number of test wafers for epitaxy experiments can be decreased significantly. When the epitaxy process parameters can be readily predicted by the model for epi-profile control in an advanced chip design, fast and cost-effective process development can be achieved.

  10. Fluorescence-suppressed time-resolved Raman spectroscopy of pharmaceuticals using complementary metal-oxide semiconductor (CMOS) single-photon avalanche diode (SPAD) detector.

    PubMed

    Rojalin, Tatu; Kurki, Lauri; Laaksonen, Timo; Viitala, Tapani; Kostamovaara, Juha; Gordon, Keith C; Galvis, Leonardo; Wachsmann-Hogiu, Sebastian; Strachan, Clare J; Yliperttula, Marjo

    2016-01-01

    In this work, we utilize a short-wavelength, 532-nm picosecond pulsed laser coupled with a time-gated complementary metal-oxide semiconductor (CMOS) single-photon avalanche diode (SPAD) detector to acquire Raman spectra of several drugs of interest. With this approach, we are able to reveal previously unseen Raman features and suppress the fluorescence background of these drugs. Compared to traditional Raman setups, the present time-resolved technique has two major improvements. First, it is possible to overcome the strong fluorescence background that usually interferes with the much weaker Raman spectra. Second, using the high photon energy excitation light source, we are able to generate a stronger Raman signal compared to traditional instruments. In addition, observations in the time domain can be performed, thus enabling new capabilities in the field of Raman and fluorescence spectroscopy. With this system, we demonstrate for the first time the possibility of recording fluorescence-suppressed Raman spectra of solid, amorphous and crystalline, and non-photoluminescent and photoluminescent drugs such as caffeine, ranitidine hydrochloride, and indomethacin (amorphous and crystalline forms). The raw data acquired by utilizing only the picosecond pulsed laser and a CMOS SPAD detector could be used for identifying the compounds directly without any data processing. Moreover, to validate the accuracy of this time-resolved technique, we present density functional theory (DFT) calculations for a widely used gastric acid inhibitor, ranitidine hydrochloride. The obtained time-resolved Raman peaks were identified based on the calculations and existing literature. Raman spectra using non-time-resolved setups with continuous-wave 785- and 532-nm excitation lasers were used as reference data. Overall, this demonstration of time-resolved Raman and fluorescence measurements with a CMOS SPAD detector shows promise in diverse areas, including fundamental chemical research, the

  11. Design and implementation of a 1-V transformer magnetic feedback low-noise amplifier (LNA) at 5-6 GHz, in a 90 nm complementary metal-oxide-semiconductor (CMOS) process

    NASA Astrophysics Data System (ADS)

    Kytonaki, Eleni-Sotiria; Simitsakis, Paschalis; Bazigos, Antonios; Papananos, Yannis

    2011-02-01

    In this study, a low-noise amplifier (LNA) suitable for low-voltage operation is presented. The LNA operates at a frequency range between 5 and 6 GHz. Its topology exploits magnetic feedback to achieve high reverse isolation and low noise performance without a significant degradation of the gain and linearity of the circuit. The design has been fabricated, considering full electrostatic discharge protection, in a modern 90 nm complementary metal-oxide-semiconductor process. The measured performance, at 5.4 GHz, shows a reverse isolation of -17.3 dB, a gain of 10.4 dB, a noise figure of 0.98 dB and an input intercept point of 1.4 dBm. The circuit dissipates 12.5 mW from a 1 V supply, while it occupies 0.162 mm2 of the die area.

  12. A Modified Capacitance-Voltage Method Used for Leff Extraction and Process Monitoring in Advanced 0.15 μm Complementary Metal-Oxide-Semiconductor Technology and Beyond

    NASA Astrophysics Data System (ADS)

    Huang, Heng-Sheng; Shiu, Jen-Shiuan; Lin, Shyh-Jye; Chou, Jih-Wen; Lee, Ryan; Chen, Coming; Hong, Gary

    2001-03-01

    In this paper, an alternative approach for the extraction of effective channel length, Leff, using a modified capacitance-voltage (C-V) method [the capacitance-ratio (C-R) method], which considers depletion effect compensation is proposed. In general, we define Leff=Lmask-Δ L, where Δ L is the sum of the polysilicon gate lithography bias and two times the overlap length of the polysilicon gate and source/drain (S/D) extension (Δ L=Lpb+2Lovlap). Using the modified C-V method, more consistent and reasonable Leff data can be extracted as compared to those obtained using the newest current-voltage (I-V) method (shift and ratio method). In using the proposed C-R method, we can electrically measure the exact Lpb and Lovlap numbers that can both be used as process monitor parameters. The within-wafer uniformities of Leff (or Δ L), Lpb and Lovlap have also been checked among devices of various sizes. After the Leff is extracted, a stable S/D resistance Rsd, with Vg independence, is determined and verified using the I-V method. The parasitic capacitance Cgd is another extracted parameter that is as important as Rsd in SPICE modeling for RF complementary metal-oxide-semiconductor (CMOS) applications.

  13. New Source Heterojunction Structures with Relaxed/Strained Semiconductors for Quasi-Ballistic Complementary Metal-Oxide-Semiconductor Transistors: Relaxation Technique of Strained Substrates and Design of Sub-10 nm Devices

    NASA Astrophysics Data System (ADS)

    Tomohisa Mizuno,; Naoki Mizoguchi,; Kotaro Tanimoto,; Tomoaki Yamauchi,; Mitsuo Hasegawa,; Toshiyuki Sameshima,; Tsutomu Tezuka,

    2010-04-01

    We have studied new abrupt-source-relaxed/strained semiconductor-heterojunction structures for quasi-ballistic complementary metal-oxide-semiconductor (CMOS) devices, by locally controlling the strain of a single strained semiconductor. Appling O+ ion implantation recoil energy to the strained semiconductor/buried oxide interface, Raman analysis of the strained layers indicates that we have successfully relaxed both strained-Si-on-insulator (SSOI) substrates for n-MOS and SiGe-on-insulator (SGOI) substrates for p-MOS without polycrystallizing the semiconductor layers, by optimizing O+ ion implantation conditions. As a result, it is considered that the source conduction and valence band offsets Δ EC and Δ EV can be realized by the energy difference in the source Si/channel-strained Si and the source-relaxed SiGe/channel-strained SiGe layers, respectively. The device simulator, considering the tunneling effects at the source heterojunction, shows that the transconductance of sub-10 nm source heterojunction MOS transistors (SHOT) continues to increase with increasing Δ EC. Therefore, SHOT structures with the novel source heterojunction are very promising for future quasi-ballistic CMOS devices.

  14. Metal oxide semiconductor thin-film transistors for flexible electronics

    NASA Astrophysics Data System (ADS)

    Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

    2016-06-01

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular

  15. Demonstration of Y1Ba2Cu3O(7-delta) and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate

    NASA Technical Reports Server (NTRS)

    Burns, M. J.; De La Houssaye, P. R.; Russell, S. D.; Garcia, G. A.; Clayton, S. R.; Ruby, W. S.; Lee, L. P.

    1993-01-01

    We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary MOS transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O(7-delta) flux-flow transistors, and separately, Y1Ba2Cu3O(7-delta) superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.

  16. A 5.4-9.2 GHz 19.5 dB Complementary Metal-Oxide-Semiconductor Ultrawide-Band Receiver Front-End Low-Noise Amplifier

    NASA Astrophysics Data System (ADS)

    Azhari, Afreen; Kubota, Shinichi; Toya, Akihiro; Sasaki, Nobuo; Kikkawa, Takamaro

    2011-04-01

    In this work, we present an ultrawide-band (UWB) complementary metal-oxide-semiconductor (CMOS) low-noise amplifier (LNA) for wireless communication in the upper UWB band, that is, from 5.4-9.2 GHz bandwidth with a wide-band 50 Ω input matching network in front of the LNA. A three-stage cascode-topology-based LNA with high-transconductance MOS transistors, was employed to improve the voltage gain up to 23 dB at 7.5 GHz, with 4.5-9.2 GHz 3 dB bandwidth. The maximum output power S21 was 19.5 dB at 7.3 GHz, with 5.4-9.2 GHz 3 dB bandwidth. The input matching circuit was designed with a reduced number of passive elements, resulting in an input reflection coefficient S11 of less than -10 dB from 4.5-9.2 GHz. The noise figure of the LNA was as low as 3.5 dB and the input-referred third-order intercept point (IIP3) was -8 dBm. The LNA has output reflection coefficient S22 of less than -10 dB from 5-7 GHz and a good reverse isolation, that is, S12 of < -45 dB in the entire UWB, due to a cascode topology. The LNA was fabricated using 180 nm CMOS technology, which consumes 56 mW power at 1.8 V power supply. In this paper, we also demonstrate a wireless communication of 7 GHz Gaussian monocycle pulse (GMP) by horn antennas and the LNA from 20 cm transmission distance.

  17. Metal oxide semiconductors for solar energy harvesting

    NASA Astrophysics Data System (ADS)

    Thimsen, Elijah James

    The correlation between energy consumption and human development illustrates the importance of this societal resource. We will consume more energy in the future. In light of issues with the status quo, such as climate change, long-term supply and security, solar energy is an attractive source. It is plentiful, virtually inexhaustible, and can provide more than enough energy to power society. However, the issue with producing electricity and fuels from solar energy is that it is expensive, primarily from the materials (silicon) used in building the cells. Metal oxide semiconductors are an attractive class of materials that are extremely low cost and can be produced at the scale needed to meet widespread demand. An industrially attractive thin film synthesis process based on aerosol deposition was developed that relies on self-assembly to afford rational control over critical materials parameters such as film morphology and nanostructure. The film morphology and nanostructure were found to have dramatic effects on the performance of TiO2-based photovoltaic dye-sensitized solar cells. Taking a cue from nature, to overcome the spatial and temporal mismatch between the supply of sunlight and demand for energy consumption, it is desirable to produce solar fuels such as hydrogen from photoelectrochemical water splitting. The source of water is important---seawater is attractive. The fundamental reaction mechanism for TiO2-based cells is discussed in the context of seawater splitting. There are two primary issues with producing hydrogen by photoelectrochemical water splitting using metal-oxide semiconductors: visible light activity and spontaneous activity. To address the light absorption issue, a combined theory-experiment approach was taken to understand the fundamental role of chemical composition in determining the visible light absorption properties of mixed metal-oxide semiconductors. To address the spontaneous activity issue, self-biasing all oxide p/n bulk

  18. Nanoscale Metal Oxide Semiconductors for Gas Sensing

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.; Evans, Laura; Xu, Jennifer C.; VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.

    2011-01-01

    A report describes the fabrication and testing of nanoscale metal oxide semiconductors (MOSs) for gas and chemical sensing. This document examines the relationship between processing approaches and resulting sensor behavior. This is a core question related to a range of applications of nanotechnology and a number of different synthesis methods are discussed: thermal evaporation- condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed, providing a processing overview to developers of nanotechnology- based systems. The results of a significant amount of testing and comparison are also described. A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. The TECsynthesized single-crystal nanowires offer uniform crystal surfaces, resistance to sintering, and their synthesis may be done apart from the substrate. The TECproduced nanowire response is very low, even at the operating temperature of 200 C. In contrast, the electrospun polycrystalline nanofiber response is high, suggesting that junction potentials are superior to a continuous surface depletion layer as a transduction mechanism for chemisorption. Using a catalyst deposited upon the surface in the form of nanoparticles yields dramatic gains in sensitivity for both nanostructured, one-dimensional forms. For the nanowire materials, the response magnitude and response rate uniformly increase with increasing operating temperature. Such changes are interpreted in terms of accelerated surface diffusional processes, yielding greater access to chemisorbed oxygen species and faster dissociative chemisorption, respectively. Regardless of operating temperature, sensitivity of the nanofibers is a factor of 10 to 100 greater than that of nanowires with the same catalyst for the same test condition. In summary, nanostructure appears critical to governing the reactivity, as measured by electrical

  19. Metal oxide semiconductor structure using oxygen-terminated diamond

    NASA Astrophysics Data System (ADS)

    Chicot, G.; Maréchal, A.; Motte, R.; Muret, P.; Gheeraert, E.; Pernot, J.

    2013-06-01

    Metal-oxide-semiconductor structures with aluminum oxide as insulator and p-type (100) mono-crystalline diamond as semiconductor have been fabricated and investigated by capacitance versus voltage and current versus voltage measurements. The aluminum oxide dielectric was deposited using low temperature atomic layer deposition on an oxygenated diamond surface. The capacitance voltage measurements demonstrate that accumulation, depletion, and deep depletion regimes can be controlled by the bias voltage, opening the route for diamond metal-oxide-semiconductor field effect transistor. A band diagram is proposed and discussed.

  20. CMOS array design automation techniques. [metal oxide semiconductors

    NASA Technical Reports Server (NTRS)

    Ramondetta, P.; Feller, A.; Noto, R.; Lombardi, T.

    1975-01-01

    A low cost, quick turnaround technique for generating custom metal oxide semiconductor arrays using the standard cell approach was developed, implemented, tested and validated. Basic cell design topology and guidelines are defined based on an extensive analysis that includes circuit, layout, process, array topology and required performance considerations particularly high circuit speed.

  1. Multilevel metallization method for fabricating a metal oxide semiconductor device

    NASA Technical Reports Server (NTRS)

    Hollis, B. R., Jr.; Feltner, W. R.; Bouldin, D. L.; Routh, D. E. (Inventor)

    1978-01-01

    An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.

  2. Integrated photo-responsive metal oxide semiconductor circuit

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzban D. (Inventor); Dargo, David R. (Inventor); Lyons, John C. (Inventor)

    1987-01-01

    An infrared photoresponsive element (RD) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device by depositing a layer of a lead chalcogenide as a photoresistive element forming an ohmic bridge between two metallization strips serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation.

  3. Metal-oxide-semiconductor photocapacitor for sensing surface plasmon polaritons

    NASA Astrophysics Data System (ADS)

    Khalilzade-Rezaie, Farnood; Peale, Robert E.; Panjwani, Deep; Smith, Christian W.; Nath, Janardan; Lodge, Michael; Ishigami, Masa; Nader, Nima; Vangala, Shiva; Yannuzzi, Mark; Cleary, Justin W.

    2015-09-01

    An electronic detector of surface plasmon polaritons (SPP) is reported. SPPs optically excited on a metal surface using a prism coupler are detected by using a close-coupled metal-oxide-semiconductor capacitor. Semitransparent metal and graphene gates function similarly. We report the dependence of the photoresponse on substrate carrier type, carrier concentration, and back-contact biasing.

  4. Large Lateral Photovoltaic Effect in Metal-(Oxide-) Semiconductor Structures

    PubMed Central

    Yu, Chongqi; Wang, Hui

    2010-01-01

    The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures. PMID:22163463

  5. New Performance Indicators of Metal-Oxide-Semiconductor Field-Effect Transistors for High-Frequency Power-Conscious Design

    NASA Astrophysics Data System (ADS)

    Katayama, Kosuke; Fujishima, Minoru

    2012-02-01

    With the progress of complementary metal-oxide-semiconductor (CMOS) process technology, it is possible to apply CMOS devices to millimeter-wave amplifier design. However, the power consumption of the system becomes higher in proportion to its target frequency. Moreover, CMOS devices are biased at a point where the device achieves the highest gain and consumes much power. In order to reduce the power consumption without any compromise, we introduce two types of indicator. One works towards achieving the highest gain with the lowest power consumption. The other works towards achieving the highest linearity with consideration of the power consumption. In this work, we have shown the effectiveness of those indicators by applying measured data of the fabricated metal-oxide-semiconductor field-effect transistors (MOSFETs) to cascade common-source amplifiers.

  6. Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices

    NASA Astrophysics Data System (ADS)

    Xu, Kaikai; Zhang, Zhengyuan; Zhang, Zhengping

    2016-01-01

    A silicon p-channel metal oxide semiconductor field-effect transistor (Si-PMOSFET) that is fully compatible with the standard complementary metal oxide semiconductor process is investigated based on the phenomenon of optical radiation observed in the reverse-biased p-n junction in the Si-PMOSFET device. The device can be used either as a two-terminal silicon diode light-emitting device (Si-diode LED) or as a three-terminal silicon gate-controlled diode light-emitting device (Si gate-controlled diode LED). It is seen that the three-terminal operating mode could provide much higher power transfer efficiency than the two-terminal operating mode. A new solution based on the concept of a theoretical quantum efficiency model combined with calculated results is proposed for interpreting the evidence of light intensity reduction at high operating voltages. The Si-LED that can be easily integrated into CMOS fabrication process is an important step toward optical interconnects.

  7. GaN Metal Oxide Semiconductor Field Effect Transistors

    SciTech Connect

    Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

    1999-03-02

    A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

  8. Waveguide biosensor with integrated detector array for tuberculosis testing

    NASA Astrophysics Data System (ADS)

    Yan, Rongjin; Lynn, N. Scott; Kingry, Luke C.; Yi, Zhangjing; Slayden, Richard A.; Dandy, David S.; Lear, Kevin L.

    2011-01-01

    A label-free immunoassay using a local evanescent array coupled (LEAC) biosensor is reported. Complementary metal oxide semiconductor chips with integrated photoconductor arrays are used to detect an antibody to a M. tuberculosis protein antigen, HspX. The metrology limits of the LEAC sensor using dc and ac measurement systems correspond to average film thicknesses of 28 and 14 pm, respectively. Limits of detection are 87 and 108 pm, respectively, for mouse immunoglobulin G antibody patterning and antigen detection.

  9. Characterization of silicon carbide metal oxide semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Marinella, Matthew J.

    Only a few years after the invention of the transistor, William Shockley considered silicon carbide (SiC) an excellent material for high temperature semiconductor devices. Over a half century later, SiC technology is nearly mature enough that it may be considered for use in commercial electronic devices. Furthermore, since SiC has the ability to grow thermal silicon dioxide, significant research has been directed toward the creation of a commercial SiC metal oxide semiconductor field effect transistor (MOSFET). However, a number of significant hurdles still must be overcome before SiC devices can become commercially competitive, including the relatively high cost and low quality of materials. Another significant problem is the lack of understanding of factors which limit the minority carrier lifetime. The primary purpose of this work was to use the pulsed metal oxide semiconductor capacitor (MOS-C) technique to measure generation lifetime in SiC materials. It was found that many nonidealities corrupt the results obtained by this technique. One very interesting nonideality was negative bias temperature instability (NBTI), which has also been widely studied by the silicon industry in recent years. Methods to understand and minimize the effect of these nonidealities were developed. Furthermore, these methods allowed for further study of the oxide properties, such as leakage current. Even after accounting for nonidealities, generation lifetimes showed several peculiarities, such as a variation of as much as a factor of 1000 within a square cm area. In addition, the ratio of generation to recombination lifetime is less than unity, which is not predicted by classic theory, nor typically observed in silicon devices. Possible explanations are put forth to explain these observations. In addition, to further investigate these abnormalities, Schottky diodes were fabricated and characterized. When applied to the SiC MOS capacitor, the pulsed MOS-C technique involves

  10. Plasmonic nanostructured metal-oxide-semiconductor reflection modulators.

    PubMed

    Olivieri, Anthony; Chen, Chengkun; Hassan, Sa'ad; Lisicka-Skrzek, Ewa; Tait, R Niall; Berini, Pierre

    2015-04-01

    We propose a plasmonic surface that produces an electrically controlled reflectance as a high-speed intensity modulator. The device is conceived as a metal-oxide-semiconductor capacitor on silicon with its metal structured as a thin patch bearing a contiguous nanoscale grating. The metal structure serves multiple functions as a driving electrode and as a grating coupler for perpendicularly incident p-polarized light to surface plasmons supported by the patch. Modulation is produced by charging and discharging the capacitor and exploiting the carrier refraction effect in silicon along with the high sensitivity of strongly confined surface plasmons to index perturbations. The area of the modulator is set by the area of the incident beam, leading to a very compact device for a strongly focused beam (∼2.5 μm in diameter). Theoretically, the modulator can operate over a broad electrical bandwidth (tens of gigahertz) with a modulation depth of 3 to 6%, a loss of 3 to 4 dB, and an optical bandwidth of about 50 nm. About 1000 modulators can be integrated over a 50 mm(2) area producing an aggregate electro-optic modulation rate in excess of 1 Tb/s. We demonstrate experimentally modulators operating at telecommunications wavelengths, fabricated as nanostructured Au/HfO2/p-Si capacitors. The modulators break conceptually from waveguide-based devices and belong to the same class of devices as surface photodetectors and vertical cavity surface-emitting lasers. PMID:25730698

  11. Scalability of Schottky barrier metal-oxide-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Jang, Moongyu

    2016-05-01

    In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are estimated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are estimated as 1.5 × 1013 traps/cm2, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by N2 annealing. Based on the diode characteristics, various sizes of erbium-silicided/platinum-silicided n/p-type SB-MOSFETs are manufactured and analyzed. The manufactured SB-MOSFETs show enhanced drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are comparable with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

  12. A comparison of imaging methods for use in an array biosensor

    NASA Technical Reports Server (NTRS)

    Golden, Joel P.; Ligler, Frances S.

    2002-01-01

    An array biosensor has been developed which uses an actively-cooled, charge-coupled device (CCD) imager. In an effort to save money and space, a complementary metal-oxide semiconductor (CMOS) camera and photodiode were tested as replacements for the cooled CCD imager. Different concentrations of CY5 fluorescent dye in glycerol were imaged using the three different detection systems with the same imaging optics. Signal discrimination above noise was compared for each of the three systems.

  13. Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact

    NASA Astrophysics Data System (ADS)

    Ji, In‑Hwan; Choi, Young‑Hwan; Kim, Soo‑Seong; Choi, Yearn‑Ik; Han, Min‑Koo

    2006-04-01

    A new power metal oxide semiconductor field effect transistor (MOSFET) with deep body contact (DBC), which improves the avalanche energy capability, is proposed and verified by experimental results. For the experiment, a 60 V, 1 A power MOSFET employing DBC has been fabricated using a complementary metal oxide semiconductor (CMOS) compatible deep Si trench process. Previous simulations show that DBC alters the direction of the current flow from the edge to the bottom of the p-body under unclamped inductive switching (UIS) conditions. DBC also suppresses the activation of the parasitic bipolar transistor due to the reduction of the current density beneath the n+ source. Experimental results show that the ruggedness of the proposed power MOSFET is improved without sacrificing any other electrical characteristics and increasing device area.

  14. Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Huang, Yao-Tsung; Wu, San-Lein; Lin, Hau-Yu; Kuo, Cheng-Wen; Chang, Shoou-Jinn; Hong, De-Gong; Wu, Chung-Yi; Huang, Cheng-Tung; Cheng, Osbert

    2011-04-01

    We report an improved densification annealing process for sub atmospheric chemical vapor deposition (SACVD)-based shallow trench isolation (STI) to enhance n-type metal-oxide-semiconductor field-effect transistor (nMOSFET) performance for 40 nm node and beyond. Experimental results show that this improved STI densification process leads to lower compressive stress in the small active area compared with the standard STI process. This is beneficial to electron mobility and leads to an enhancement of on-current (ION). Moreover, comparable drain induced barrier lowering (DIBL) and subthreshold swing (SS) characteristics for both devices indicate that the improved densification process would no significant influences on process variations or dopant diffusions. Hence, the improved STI process can be adopted in 40 nm complementary metal-oxide-semiconductor (CMOS) technology and beyond.

  15. Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Shima, Akio; Sugii, Nobuyuki; Mise, Nobuyuki; Hisamoto, Digh; Takeda, Ken-ichi; Torii, Kazuyoshi

    2011-04-01

    This paper reports novel, non-epitaxial raised source/drain (S/D) approaches to decrease the parasitic external resistance in complementary metal-oxide-semiconductor field-effect transistors (CMOSFETs) fabricated on ultrathin silicon on insulator (UTSOI). This technique utilizes a metal Schottky S/D process with dopant segregation. Selectively formed NiSi2 with dopant segregation fabricated by laser-spike annealing (LSA) significantly lowered effective Shottky-barrier height and, thereby, lowered contact resistance (ρc). Satisfying the requirements of UTSOI MOSFETs in the 32-nm node for low stand-by power (LSTP) application, external parasitic resistance was reduced to 140 (NMOS) and 350 (PMOS) Ω µm. Our results show that ρc is an important component of parasitic resistance in terms of improving device performance of UTSOI MOSFETs.

  16. High temperature behavior of multi-region direct current current-voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal-oxide-semiconductor field-effect-transistors reliability

    NASA Astrophysics Data System (ADS)

    He, Yandong; Zhang, Ganggang; Zhang, Xing

    2014-01-01

    With the process compatibility with the mainstream standard complementary metal-oxide-semiconductor (CMOS), shallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular for its better tradeoff between breakdown voltage and performance, especially for smart power applications. A multi-region direct current current-voltage (MR-DCIV) technique with spectroscopic features was demonstrated to map the interface state generation in the channel, accumulation and STI drift regions. High temperature behavior of MR-DCIV spectroscopy was analyzed and a physical model was verified. Degradation of STI-based LDMOS transistors under high temperature reverse bias (HTRB) stress is experimentally studied by MR-DCIV spectroscopy. The impact of interface state location on device electrical characteristics was investigated. Our results show that the major contribution to HTRB degradation, in term of the on-resistance degradation, was attributed to interface state generation under STI drift region.

  17. Vox/Eox-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress

    NASA Astrophysics Data System (ADS)

    Tsujikawa, Shimpei; Shiga, Katsuya; Umeda, Hiroshi; Yugami, Jiro

    2007-01-01

    The breakdown mechanism of ultrathin SiON gate dielectrics in p-type metal oxide semiconductor field effect transistors having p+gates (p+gate-pMOSFETs) has been studied. Systematic study with varying gate doping concentrations has revealed that, in the case of p+gate-pMOSFET in inversion mode, gate dielectric breakdown under stress voltage lower than -4 V is driven by oxide voltage (Vox) or oxide field (Eox), while the breakdown under stress voltage higher than -4 V is driven by gate voltage (Vg). The Vox/Eox-driven breakdown observed under low stress voltage is quite important to the reliability of low-voltage complementary metal oxide semiconductor (CMOS). By studying the mechanism of the breakdown, it has been clarified that the breakdown is not induced by electron current. The concept that the breakdown is due to same mechanism as the negative bias temperature instability (NBTI), namely the interfacial hydrogen release driven by Eox, has been shown to be possible. However, direct tunneling of holes driven by Vox has also been found to be a possible driving force of the breakdown. Although a decisive conclusion concerning the mechanism issue has not yet been obtained, the key factor that governs the breakdown has been shown to be Vox or Eox.

  18. Metal-oxide-semiconductor field effect transistor humidity sensor using surface conductance

    NASA Astrophysics Data System (ADS)

    Song, Seok-Ho; Yang, Hyun-Ho; Han, Chang-Hoon; Ko, Seung-Deok; Lee, Seok-Hee; Yoon, Jun-Bo

    2012-03-01

    This letter presents a metal-oxide-semiconductor field effect transistor based humidity sensor which does not use any specific materials to sense the relative humidity. We simply make use of the low pressure chemical vapor deposited (LPCVD) silicon dioxide's surface conductance change. When the gate is biased and then floated, the electrical charge in the gate is dissipated through the LPCVD silicon dioxide's surface to the surrounding ground with a time constant depending on the surface conductance which, in turn, varies with humidity. With this method, extremely high sensitivity was achieved—the charge dissipation speed increased thousand times as the relative humidity increased.

  19. Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Chen, R. S.; Wang, W. C.; Lu, M. L.; Chen, Y. F.; Lin, H. C.; Chen, K. H.; Chen, L. C.

    2013-07-01

    The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed.The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr01635h

  20. A Novel Sub-20 V Contact Gate Metal Oxide Semiconductor Field Effect Transistor with Fully Complementary Metal Oxide Semiconductor Compatible Process

    NASA Astrophysics Data System (ADS)

    Lee, Te Liang; Tsang Tsai, Ming; King, Ya Chin; Lin, Chrong Jung

    2013-04-01

    In this paper, a novel sub-20 V device which is called contact gate MOSFET (CGMOS) with fully CMOS logic compatible process is proposed and demonstrated. Comparing with lateral double diffusion MOSFET (LDMOS), CGMOS uses P substrate instead of N minus layer as drift region in logic process, and a contact on resistance protection oxide (RPO) layers to form an extra gate on the drain side of the channel region to provide a better gate control and reduce the surface field. This new device significantly rises up the breakdown voltage to 18 V with specific on-resistance 8.8 mΩ.mm2 in a small high voltage (HV) MOSFET area. Since there is no extra mask for creating the drift region or additional step for the wire bonding, CGMOS makes the integration of high voltage and logic circuits much simpler and area-saving.

  1. Experimental investigation of a shielded complementary Metal-Oxide Semiconductor (MOS) structure

    NASA Technical Reports Server (NTRS)

    Lin, H. C.; Halsor, J. L.

    1974-01-01

    A shielded integrated complimentary MOS transistor structure is described which is used to prevent field inversion in the region not occupied by the gates and which permits the use of a thinner field oxide, reduces the chip area, and has provision for simplified multilayer connections. The structure is used in the design of a static shift register and results in a 20% reduction in area.

  2. Note: Complementary metal-oxide-semiconductor high voltage pulse generation circuits

    NASA Astrophysics Data System (ADS)

    Sun, Jiwei; Wang, Pingshan

    2013-10-01

    We present two types of on-chip pulse generation circuits. The first is based on CMOS pulse-forming-lines (PFLs). It includes a four-stage charge pump, a four-stacked-MOSFET switch and a 5 mm long PFL. The circuit is implemented in a 0.13 μm CMOS process. Pulses of ˜1.8 V amplitude with ˜135 ps duration on a 50 Ω load are obtained. The obtained voltage is higher than 1.6 V, the rated operating voltage of the process. The second is a high-voltage Marx generator which also uses stacked MOSFETs as high voltage switches. The output voltage is 11.68 V, which is higher than the highest breakdown voltage (˜10 V) of the CMOS process. These results significantly extend high-voltage pulse generation capabilities of CMOS technologies.

  3. Millimeter wave complementary metal-oxide-semiconductor on-chip hexagonal ferrite circulator

    NASA Astrophysics Data System (ADS)

    Chao, Liu; Fu, Enjin; Koomson, Valencia J.; Afsar, Mohammed N.

    2014-05-01

    Hexagonal ferrites, such as BaFe12O19 and SrFe12O19, have strong uniaxial anisotropic magnetic field and remanent magnetism. By employing these properties, magnetic devices, such as phase shifter, isolator and circulator, can work up to tens of GHz frequency range without strong external magnetic field or even self-biasing. As the monolithic microwave integrated circuit extends to higher millimeter wave frequencies, the demand for high performance integrated passive magnetic components is more and more eminent. The micro- and nano-sized hexagonal ferrite can be conveniently utilized to fabricate magnetic components integrated in CMOS circuits via post processing. A nano-ferrite circulator working at 60 GHz is designed, fabricated, and integrated into the CMOS front end for the first time.

  4. Millimeter wave complementary metal-oxide-semiconductor on-chip hexagonal nano-ferrite circulator

    NASA Astrophysics Data System (ADS)

    Chao, Liu; Oukacha, Hassan; Fu, Enjin; Koomson, Valencia Joyner; Afsar, Mohammed N.

    2015-05-01

    Hexagonal ferrites such as M-type BaFe12O19 and SrFe12O19 have strong uniaxial anisotropic magnetic field and remanent magnetism. The nano-sized ferrite powder exhibits high compatibility and processability in composite material. New magnetic devices using the M-type ferrite materials can work in the tens of GHz frequency range from microwave to millimeter wave without the application of strong external magnetic field. The micro- and nano-sized hexagonal ferrite can be conveniently utilized to fabricate magnetic components integrated in CMOS integrated circuits as thin as several micrometers. The micro-fabrication method of such nano ferrite device is presented in this paper. A circulator working at 60 GHz is designed and integrated into the commercial CMOS process. The circulator exhibits distinct circulation properties in the frequency range from 56 GHz to 58 GHz.

  5. Integrated Nanopore Detectors in a Standard Complementary Metal-Oxide-Semiconductor Process

    NASA Astrophysics Data System (ADS)

    Uddin, Ashfaque; Chen, Chin-Hsuan; Yemenicioglu, Sukru; Milaninia, Kaveh; Corigliano, Ellie; Varma, Madoo; Theogarajan, Luke

    2012-02-01

    High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the development of solid-state nanopore devices in a commercial CMOS potentiostat chip implemented in On-Semiconductor's 0.5 micron technology. By using post-CMOS micromachining, a free-standing oxide membrane and electrodes are fabricated utilizing the N+ polysilicon/oxide/N+ polysilicon capacitor structure available in the aforementioned process. Nanopores with sub-5 nm diameter are drilled in the membrane using a Transmission Electron Microscope. The integrity of pores is validated by measuring current-voltage and noise characteristics. DNA translocation experiments are also performed utilizing these on-chip pores. In addition, electrical tests performed on the CMOS potentiostat circuitry show that the post-CMOS micromachining process does not have any detrimental effect on the CMOS circuitry.

  6. Note: Complementary metal-oxide-semiconductor high voltage pulse generation circuits.

    PubMed

    Sun, Jiwei; Wang, Pingshan

    2013-10-01

    We present two types of on-chip pulse generation circuits. The first is based on CMOS pulse-forming-lines (PFLs). It includes a four-stage charge pump, a four-stacked-MOSFET switch and a 5 mm long PFL. The circuit is implemented in a 0.13 μm CMOS process. Pulses of ~1.8 V amplitude with ~135 ps duration on a 50 Ω load are obtained. The obtained voltage is higher than 1.6 V, the rated operating voltage of the process. The second is a high-voltage Marx generator which also uses stacked MOSFETs as high voltage switches. The output voltage is 11.68 V, which is higher than the highest breakdown voltage (~10 V) of the CMOS process. These results significantly extend high-voltage pulse generation capabilities of CMOS technologies. PMID:24182184

  7. Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor

    NASA Astrophysics Data System (ADS)

    Griffiths, J. A.; Chen, D.; Turchetta, R.; Royle, G. J.

    2011-03-01

    An intensified CMOS active pixel sensor (APS) has been constructed for operation in low-light-level applications: a high-gain, fast-light decay image intensifier has been coupled via a fiber optic stud to a prototype "VANILLA" APS, developed by the UK based MI3 consortium. The sensor is capable of high frame rates and sparse readout. This paper presents a study of the performance parameters of the intensified VANILLA APS system over a range of image intensifier gain levels when uniformly illuminated with 520 nm green light. Mean-variance analysis shows the APS saturating around 3050 Digital Units (DU), with the maximum variance increasing with increasing image intensifier gain. The system's quantum efficiency varies in an exponential manner from 260 at an intensifier gain of 7.45 × 103 to 1.6 at a gain of 3.93 × 101. The usable dynamic range of the system is 60 dB for intensifier gains below 1.8 × 103, dropping to around 40 dB at high gains. The conclusion is that the system shows suitability for the desired application.

  8. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    PubMed Central

    Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, M. N.; Alshareef, H. N.

    2015-01-01

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field. PMID:25892711

  9. Field-induced activation of metal oxide semiconductor for low temperature flexible transparent electronic device applications

    NASA Astrophysics Data System (ADS)

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony; Haglund, Amada; Ward, Thomas Zac; Mandrus, David; Rack, Philip

    Amorphous metal-oxide semiconductors have been extensively studied as an active channel material in thin film transistors due to their high carrier mobility, and excellent large-area uniformity. Here, we report the athermal activation of amorphous indium gallium zinc oxide semiconductor channels by an electric field-induced oxygen migration via gating through an ionic liquid. Using field-induced activation, a transparent flexible thin film transistor is demonstrated on a polyamide substrate with transistor characteristics having a current ON-OFF ratio exceeding 108, and saturation field effect mobility of 8.32 cm2/(V.s) without a post-deposition thermal treatment. This study demonstrates the potential of field-induced activation as an athermal alternative to traditional post-deposition thermal annealing for metal oxide electronic devices suitable for transparent and flexible polymer substrates. Materials Science and Technology Division, ORBL, Oak Ridge, TN 37831, USA.

  10. Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties

    NASA Astrophysics Data System (ADS)

    Chen, R. S.; Wang, W. C.; Chan, C. H.; Lu, M. L.; Chen, Y. F.; Lin, H. C.; Chen, K. H.; Chen, L. C.

    2013-11-01

    The photoconduction (PC) efficiencies of various single-crystalline metal oxide semiconductor nanowires (NWs) have been investigated and compared based on the materials' inherent properties. The defined PC efficiency (normalized gain) of SnO2 NWs is over one to five orders of magnitude higher than that of its highly efficient counterparts such as ZnO, TiO2, WO3, and GaN. The inherent property of the material allowed the photoconductive gain of an SnO2 single-NW photodetector to easily reach 8 × 108 at a low bias of 3.0 V and a low light intensity of 0.05 Wm-2, which is the optimal reported value so far for the single-NW photodetectors. The probable physical origins, such as charged surface state density and surface band bending, that caused the differences in PC efficiencies and carrier lifetimes are also discussed.

  11. Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires.

    PubMed

    Chen, R S; Wang, W C; Lu, M L; Chen, Y F; Lin, H C; Chen, K H; Chen, L C

    2013-08-01

    The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed. PMID:23779084

  12. Modeling of n-InAs metal oxide semiconductor capacitors with high-κ gate dielectric

    NASA Astrophysics Data System (ADS)

    Babadi, A. S.; Lind, E.; Wernersson, L. E.

    2014-12-01

    A qualitative analysis on capacitance-voltage and conductance data for high-κ/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface and border traps, formulated for narrow band gap metal-oxide-semiconductor capacitors. By careful determination of interface trap densities, distribution of border traps across the oxide thickness, and taking into account the bulk semiconductor response, it is shown that the trap response has a strong effect on the measured capacitances. Due to the narrow bandgap of InAs, there can be a large surface concentration of electrons and holes even in depletion, so a full charge treatment is necessary.

  13. Optimal design of an electret microphone metal-oxide-semiconductor field-effect transistor preamplifier.

    PubMed

    van der Donk, A G; Bergveld, P

    1992-04-01

    A theoretical noise analysis of the combination of a capacitive microphone and a preamplifier containing a metal-oxide-semiconductor field-effect transistor (MOSFET) and a high-value resistive bias element is given. It is found that the output signal-to-noise ratio for a source follower and for a common-source circuit is almost the same. It is also shown that the output noise can be reduced by making the microphone capacitance as well as the bias resistor as large as possible, and furthermore by keeping the parasitic gate capacitances as low as possible and finally by using an optimum value for the gate area of the MOSFET. The main noise source is the thermal noise of the gate leakage resistance of the MOSFET. It is also shown that short-channel MOSFETs produce more thermal channel noise than longer channel devices. PMID:1597614

  14. Coaxial metal-oxide-semiconductor (MOS) Au/Ga2O3/GaN nanowires.

    PubMed

    Hsieh, Chin-Hua; Chang, Mu-Tung; Chien, Yu-Jen; Chou, Li-Jen; Chen, Lih-Juann; Chen, Chii-Dong

    2008-10-01

    Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO2 substrate at 800 degrees C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 degrees C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices. PMID:18778107

  15. Drift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors

    NASA Astrophysics Data System (ADS)

    Rhew, Jung-Hoon; Lundstrom, Mark S.

    2002-11-01

    We develop a drift-diffusion equation that describes ballistic transport in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET). We treat injection from different contacts separately, and describe each injection with a set of extended McKelvey one-flux equations [Phys. Rev. 123, 51 (1961); 125, 1570 (1962)] that include hierarchy closure approximations appropriate for high-field ballistic transport and degenerate carrier statistics. We then reexpress the extended one-flux equations in a drift-diffusion form with a properly defined Einstein relationship. The results obtained for a nanoscale MOSFET show excellent agreement with the solution of the ballistic Boltzmann transport equation with no fitting parameters. These results show that a macroscopic transport model based on the moments of the Boltzmann transport equation can describe ballistic transport.

  16. Control of Nanostructures and Interfaces of Metal Oxide Semiconductors for Quantum-Dots-Sensitized Solar Cells.

    PubMed

    Tian, Jianjun; Cao, Guozhong

    2015-05-21

    Nanostructured metal oxide semiconductors (MOS), such as TiO2 and ZnO, have been regarded as an attractive material for the quantum dots sensitized solar cells (QDSCs), owing to their large specific surface area for loading a large amount of quantum dots (QDs) and strong scattering effect for capturing a sufficient fraction of photons. However, the large surface area of such nanostructures also provides easy pathways for charge recombination, and surface defects and connections between adjacent nanoparticles may retard effective charge injection and charge transport, leading to a loss of power conversion efficiency. Introduction of the surface modification for MOS or QDs has been thought an effective approach to improve the performance of QDSC. In this paper, the recent advances in the control of nanostructures and interfaces in QDSCs and prospects for the further development with higher power conversion efficiency (PCE) have been discussed. PMID:26263261

  17. Modeling of n-InAs metal oxide semiconductor capacitors with high-κ gate dielectric

    SciTech Connect

    Babadi, A. S. Lind, E.; Wernersson, L. E.

    2014-12-07

    A qualitative analysis on capacitance-voltage and conductance data for high-κ/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface and border traps, formulated for narrow band gap metal-oxide-semiconductor capacitors. By careful determination of interface trap densities, distribution of border traps across the oxide thickness, and taking into account the bulk semiconductor response, it is shown that the trap response has a strong effect on the measured capacitances. Due to the narrow bandgap of InAs, there can be a large surface concentration of electrons and holes even in depletion, so a full charge treatment is necessary.

  18. Design issues for lateral double-diffused metal-oxide-semiconductor with higher breakdown voltage.

    PubMed

    Sung, Kunsik; Won, Taeyoung

    2013-05-01

    In this paper, we discuss a new High-Side nLDMOSFET whose breakdown voltage is over 100 V while meeting the thermal budget for the conventional process. The proposed n-channel lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) has a feature in that the structure comprises a gap of 5 microm between the DEEP N-WELL and the center of the source, the surface of which is implanted by the NADJUST-layer for high breakdown voltage and simultaneously the low specific on-resistance. The computer simulation of the proposed High-Side nLDMOS exhibits BVdss of 126 V and R(ON,sp) of as low as 2.50 m(omega) x cm2. The NBL, which plays a significant role as a blocking layer against the punch-through seems to function as a hurdle for increasing the breakdown voltage. PMID:23858840

  19. Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors

    SciTech Connect

    Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

    1998-10-14

    GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

  20. Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Lee, Yeonghun; Kakushima, Kuniyuki; Natori, Kenji; Iwai, Hiroshi

    2015-10-01

    We developed a semi-analytical quasi-ballistic transport model for the nanowire metal-oxide-semiconductor field-effect transistors, dealing with finite lengths of source, channel, and drain. For the modeling, we used a combination of one-flux scattering matrices and analytical solutions of Boltzmann transport equations. The developed model was in quantitatively good agreement with numerical results, and well represented intermediate-scaled devices. In addition, we illustrated that the finite source seriously affect the distribution function of the carriers injected from the source, and the finite drain does for the backscattering into the channel from the drain. Finally, our model and results would help to understand physical aspects regarding quasi-ballistic transport in nanoscale devices.

  1. Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot.

    PubMed

    Nguyen, Khoi T; Lilly, Michael P; Nielsen, Erik; Bishop, Nathan; Rahman, Rajib; Young, Ralph; Wendt, Joel; Dominguez, Jason; Pluym, Tammy; Stevens, Jeffery; Lu, Tzu-Ming; Muller, Richard; Carroll, Malcolm S

    2013-01-01

    We report Pauli blockade in a multielectron silicon metal-oxide-semiconductor double quantum dot with an integrated charge sensor. The current is rectified up to a blockade energy of 0.18 ± 0.03 meV. The blockade energy is analogous to singlet-triplet splitting in a two electron double quantum dot. Built-in imbalances of tunnel rates in the MOS DQD obfuscate some edges of the bias triangles. A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges. A bound on relaxation time of the triplet-like state is also obtained from this measurement. PMID:24199677

  2. High and low threshold P-channel metal oxide semiconductor process and description of microelectronics facility

    NASA Technical Reports Server (NTRS)

    Bouldin, D. L.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

    1976-01-01

    The fabrication techniques and detail procedures for creating P-channel Metal-Oxide-Semiconductor (P-MOS) integrated circuits at George C. Marshall Space Flight Center (MSFC) are described. Examples of P-MOS integrated circuits fabricated at MSFC together with functional descriptions of each are given. Typical electrical characteristics of high and low threshold P-MOS discrete devices under given conditions are provided. A general description of MSFC design, mask making, packaging, and testing procedures is included. The capabilities described in this report are being utilized in: (1) research and development of new technology, (2) education of individuals in the various disciplines and technologies of the field of microelectronics, and (3) fabrication of many types of specially designed integrated circuits which are not commercially feasible in small quantities for in-house research and development programs.

  3. Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

    NASA Astrophysics Data System (ADS)

    Kao, Wei-Chieh

    Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

  4. Rapid Bacterial Detection via an All-Electronic CMOS Biosensor.

    PubMed

    Nikkhoo, Nasim; Cumby, Nichole; Gulak, P Glenn; Maxwell, Karen L

    2016-01-01

    The timely and accurate diagnosis of infectious diseases is one of the greatest challenges currently facing modern medicine. The development of innovative techniques for the rapid and accurate identification of bacterial pathogens in point-of-care facilities using low-cost, portable instruments is essential. We have developed a novel all-electronic biosensor that is able to identify bacteria in less than ten minutes. This technology exploits bacteriocins, protein toxins naturally produced by bacteria, as the selective biological detection element. The bacteriocins are integrated with an array of potassium-selective sensors in Complementary Metal Oxide Semiconductor technology to provide an inexpensive bacterial biosensor. An electronic platform connects the CMOS sensor to a computer for processing and real-time visualization. We have used this technology to successfully identify both Gram-positive and Gram-negative bacteria commonly found in human infections. PMID:27618185

  5. Silicon carbide: A unique platform for metal-oxide-semiconductor physics

    SciTech Connect

    Liu, Gang; Tuttle, Blair R.; Dhar, Sarit

    2015-06-15

    A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO{sub 2}/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

  6. Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition

    NASA Astrophysics Data System (ADS)

    Su, Y. K.; Liaw, U. H.

    1994-10-01

    Silicon dioxide (SiO2) insulator layers on indium antimonide (InSb) have been prepared by direct phtochemical-vapor deposition at low temperature below 200 C using 2537 A UV light. Ellipsometric studies prove that the refractive index and deposition rate of the photo-oxide films depend on the substrate temperature and gas ratio. The films evaluated by Auger electron spectroscopy (AES) depth profile showed that composition atoms were distributed uniformly throughout the oxide film. The AES analysis found the dominant components of the oxide film are silicon and oxygen. Fourier transform infrared spectroscopy absorption shows that the grown film has strong Si-O bonds with few Si-H bonds. The chemical x-ray photoelectron spectroscopy depth profile shows that the constituents of the semiconductors' outdiffusion into the oxide are few. Metal-oxide-semiconductor (MOS) capacitors were constructed on InSb substrates. Capacitance voltage (C-V) characteristics of the MOS capacitors were measured at 77 K. The interface-state density is of the order of 10(exp 11)/sq cm/eV, and distributed in a very good U shape within the midgap. C-V curves showed almost no hysteresis and smaller flatband voltage. The current-voltage curve shows the leakage current is about 1 nA at 0.8 V, and the breakdown voltage is about 0.8 MV/cm.

  7. Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition

    NASA Astrophysics Data System (ADS)

    Su, Y. K.; Liaw, U. H.

    1994-10-01

    Silicon dioxide (SiO2) insulator layers on indium antimonide (InSb) have been prepared by direct photochemical-vapor deposition at low temperature below 200 °C using 2537 Å UV light. Ellipsometric studies prove that the refractive index and deposition rate of the photo-oxide films depend on the substrate temperature and gas ratio. The films evaluated by Auger electron spectroscopy (AES) depth profile showed that composition atoms were distributed uniformly throughout the oxide film. The AES analysis found the dominant components of the oxide film are silicon and oxygen. Fourier transform infrared spectroscopy absorption shows that the grown film has strong Si—O bonds with few Si—H bonds. The chemical x-ray photoelectron spectroscopy depth profile shows that the constituents of the semiconductors' outdiffusion into the oxide are few. Metal-oxide-semiconductor (MOS) capacitors were constructed on InSb substrates. Capacitance voltage (C-V) characteristics of the MOS capacitors were measured at 77 K. The interface-state density is of the order of 1011 cm-2 eV-1, and distributed in a very good U shape within the midgap. C-V curves showed almost no hysteresis and smaller flatband voltage. The current-voltage curve shows the leakage current is about 1 nA at 0.8 V, and the breakdown voltage is about 0.8 MV/cm.

  8. Electrode dependent interfacial layer variation in metal-oxide-semiconductor capacitor

    NASA Astrophysics Data System (ADS)

    Park, I.-S.; Jung, Y. C.; Lee, M.; Seong, S.; Ahn, J.

    2014-03-01

    The interfacial layer between oxide and semiconductor in metal-oxide-semiconductor (MOS) capacitors depends on the metal electrode material. The metal/HfO2/Si and metal/HfO2/Ge capacitor were made using an atomic layer deposited HfO2 dielectric films and Mo, Ru, and Pt electrodes above Si substrate and Ti, Ru, and Pt electrodes above Ge substrate. The measured saturation capacitance was varied with electrode and evaluated to capacitance equivalent thickness (CET). In Si-based MOS capacitor, the CET value of the capacitor with Pt electrode is larger than those with Mo and Ru electrode. In addition, the CET is 27.4 A, 38.2 A, and 30.8 A for Ti, Ru, and Pt electrode, respectively, for Ge-based MOS capacitors. The CET variation with electrode is attributed the variation of dielectric constant of HfO2 dielectric and the difference of interfacial layer. The CET variation is well in agreement with the interfacial layer thickness taken by a transmission electron microscopy. The thickness variation of interfacial layer results from the oxygen gettering ability of the electrode even though they are apart.

  9. on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitor

    NASA Astrophysics Data System (ADS)

    Chen, Tzu-Yu; Hwu, Jenn-Gwo

    2014-09-01

    Two-state inversion capacitances of a metal-oxide-semiconductor capacitor (MOSCAP) at varied AC frequencies after negative/positive constant voltage stress (negative/positive CVS) treatments are investigated. When the device was biased into inversion, a low/high inversion-capacitance state (set state/reset state) was achieved after the negative/positive CVS treatments with/without a few trapped electrons in the ultrathin SiO2 layer. The inversion capacitances of set states were frequency independent, whereas those of reset states increased with the decreasing frequencies. It is different from the general characteristics of an MOSCAP whose inversion capacitances disperse at low frequencies. For this observed finding of the two-state inversion capacitances at varied frequencies, a mechanism of trapped-electrons-induced screening effect on the inversion electrons is proposed. The number of the trapped electrons in the SiO2 layer affects the number of the inversion electrons, and thus dominates the values of the inversion capacitances. Besides, simulation curves of the inversion capacitances of set states are demonstrated. They are fitted well with the experimental data utilizing the mechanism we proposed. This work investigates further into the influence of the trapped electrons in the ultrathin SiO2 layer on the inversion capacitance response.

  10. Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping.

    PubMed

    Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S

    2015-01-01

    As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215

  11. Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications

    SciTech Connect

    Cao, Y.; Zhang, J.; Li, X.; Kosel, T.H.; Fay, P.; Hall, D.C.; Zhang, X.B.; Dupuis, R.D.; Jasinski, J.B.; Liliental-Weber, Z.

    2004-09-01

    Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

  12. Hydrogen Doped Metal Oxide Semiconductors with Exceptional and Tunable Localized Surface Plasmon Resonances.

    PubMed

    Cheng, Hefeng; Wen, Meicheng; Ma, Xiangchao; Kuwahara, Yasutaka; Mori, Kohsuke; Dai, Ying; Huang, Baibiao; Yamashita, Hiromi

    2016-07-27

    Heavily doped semiconductors have recently emerged as a remarkable class of plasmonic alternative to conventional noble metals; however, controlled manipulation of their surface plasmon bands toward short wavelengths, especially in the visible light spectrum, still remains a challenge. Here we demonstrate that hydrogen doped given MoO3 and WO3 via a facile H-spillover approach, namely, hydrogen bronzes, exhibit strong localized surface plasmon resonances in the visible light region. Through variation of their stoichiometric compositions, tunable plasmon resonances could be observed in a wide range, which hinge upon the reduction temperatures, metal species, the nature and the size of metal oxide supports in the synthetic H2 reduction process as well as oxidation treatment in the postsynthetic process. Density functional theory calculations unravel that the intercalation of hydrogen atoms into the given host structures yields appreciable delocalized electrons, enabling their plasmonic properties. The plasmonic hybrids show potentials in heterogeneous catalysis, in which visible light irradiation enhanced catalytic performance toward p-nitrophenol reduction relative to dark condition. Our findings provide direct evidence for achieving plasmon resonances in hydrogen doped metal oxide semiconductors, and may allow large-scale applications with low-price and earth-abundant elements. PMID:27384437

  13. Metal-oxide-semiconductor-compatible ultra-long-range surface plasmon modes

    NASA Astrophysics Data System (ADS)

    Durfee, C. G.; Furtak, T. E.; Collins, R. T.; Hollingsworth, R. E.

    2008-06-01

    Long-range surface plasmons traveling on thin metal films have demonstrated promising potential in subwavelength waveguide applications. In work toward device applications that can leverage existing silicon microelectronics technology, it is of interest to explore the propagation of surface plasmons in a metal-oxide-semiconductor geometry. In such a structure, there is a high refractive index contrast between the semiconductor (n ≈3.5 for silicon) and the insulating oxide (typically n ≈1.5-2.5). However, the introduction of dielectrics with disparate refractive indices is known to strongly affect the guiding properties of surface plasmons. In this paper, we analyze the implications of high index contrast in 1D layered surface plasmon structures. We show that it is possible to introduce a thin dielectric layer with a low refractive index positioned next to the metal without adversely affecting the guiding quality. In fact, such a configuration can dramatically increase the propagation length of the conventional long-range mode. While this study is directed at silicon-compatible waveguides working at telecommunications wavelengths, this configuration has general implications for surface plasmon structure design using other materials and operating at alternative wavelengths.

  14. Silicon carbide: A unique platform for metal-oxide-semiconductor physics

    NASA Astrophysics Data System (ADS)

    Liu, Gang; Tuttle, Blair R.; Dhar, Sarit

    2015-06-01

    A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO2/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

  15. A metal-oxide-semiconductor radiation dosimeter with a thick and defect-rich oxide layer

    NASA Astrophysics Data System (ADS)

    Liu, Hongrui; Yang, Yuhao; Zhang, Jinwen

    2016-04-01

    Enhancing the density of defects in the oxide layer is the main factor in improving the sensitivity of a metal-oxide-semiconductor (MOS) radiation dosimeter. This paper reports a novel MOS dosimeter with a very thick and defect-rich oxide layer fabricated by MEMS technology. The category of defects in SiO2 and their possible effect on the radiation dose sensing was analyzed. Then, we proposed combining deep-reactive-ion etching, thermal oxidation and low pressure chemical vapor deposition to realize an oxide layer containing multiple and large interfaces which can increase defects significantly. The trench-and-beam structure of silicon was considered in detail. The fabrication process was developed for obtaining a thick and compact MEMS-made SiO2. Our devices were irradiated by γ-rays of 60Co at 2 Gy per minute for 2 h and a thermally stimulated current (TSC) method was used to determine the readout of the dosimeters. Results show that there is a peak current of about 450 nA, indicating a total TSC charge of 158 μC and sensitivity of 1.1 μC mm-3·Gy, which is 40 times the sensitivity of previous MOS dosimeters.

  16. Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

    DOE PAGESBeta

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; Ovchinnikova, Olga S.; Haglund, Amanda V.; Dai, Sheng; Ward, Thomas Zac; Mandrus, David; Rack, Philip D.

    2016-02-09

    To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistormore » can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.« less

  17. Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    PubMed Central

    Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E.; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S.

    2015-01-01

    As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215

  18. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics.

    PubMed

    Matsumoto, Tsubasa; Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Inokuma, Takao; Tokuda, Norio; Yamasaki, Satoshi

    2016-01-01

    We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm(2)/Vs, respectively, at room temperature. PMID:27545201

  19. Hydrocarbon dissociation on palladium studied with a hydrogen sensitive Pd-metal-oxide-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Dannetun, H.; Lundström, I.; Petersson, L.-G.

    1988-01-01

    The polycrystalline Pd surface of a hydrogen sensitive palladium-silicon dioxide-silicon [Pd-MOS (metal-oxide-semiconductor)] structure has been exposed to small unsaturated hydrocarbons in the temperature range 300-500 K. Apart from the hydrogen response of the Pd-MOS structure also work function (ΔΦ) and electron energy-loss studies were performed. At 500 K the hydrocarbons dissociate completely upon adsorption and produce a surface with atomically adsorbed carbon. The Pd-MOS structure can be used to observe both the dehydrogenation of the hydrocarbon molecules and the process of carbon adsorbing on the palladium surface. The sticking coefficient at this temperature for all hydrocarbons is close to unity. Furthermore, the hydrogen sensitivity of the structure is not drastically reduced by the adsorbed carbon. If the hydrocarbon adsorption is performed at 300 K there is still, at least on the initially clean surface, a large dehydrogenation. The dissociation is, however, not at all complete and there are considerable amounts of hydrocarbon species adsorbed for each gas. The induced work function shifts due to the different hydrocarbons vary from -1.0 to -1.7 eV. The hydrogen sensitivity of the Pd-MOS structure is reduced for growing hydrocarbon coverages and disappears completely for work function shifts of -1.7 eV.

  20. Origin of microwave noise from an n-channel metal-oxide-semiconductor field effect transistor

    NASA Astrophysics Data System (ADS)

    Pantisano, Luigi; Cheung, K. P.

    2002-12-01

    The physics of noise is a complex subject. It is often difficult to clearly identify the physical origin of the observed noise. Electronic noise at microwave frequencies is technologically very important and has been extensively studied. While it is well known that many physical phenomena give rise to output current fluctuations (i.e., noise) in a metal-oxide-semiconductor field effect transistor (MOSFET), few physical phenomena have a time constant that can contribute in the microwave range. Current physical models of MOSFET microwave noise are all based on thermal agitation of electrons (thermal noise). However, what is the correct temperature (lattice or electron) to use in the noise calculation is an ongoing debate in the literature. All the modeling efforts have been using noise measured from pristine devices as a test for validity. In this work, we studied the n-MOSFET microwave noise as a function of electrical stress induced degradation. Our experiments thus introduced a new dimension in the noise behavior study. The results of our experiments cannot be explained by any of the current existing models. All existing models discounted flicker noise as being too small at microwave frequency. Our experimental results compel us to reexamine the validity of this common assumption. While we are not quite able to prove conclusively, our evidences are clearly leaning toward defect-induced fluctuation (flicker noise) as the origin of microwave noise in a n-MOSFET

  1. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

    PubMed Central

    Matsumoto, Tsubasa; Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Inokuma, Takao; Tokuda, Norio; Yamasaki, Satoshi

    2016-01-01

    We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm2/Vs, respectively, at room temperature. PMID:27545201

  2. Experimental characterization of a metal-oxide-semiconductor field-effect transistor-based Coulter counter.

    PubMed

    Sridhar, Manoj; Xu, Dongyan; Kang, Yuejun; Hmelo, Anthony B; Feldman, Leonard C; Li, Dongqing; Li, Deyu

    2008-05-15

    We report the detailed characterization of an ultrasensitive microfluidic device used to detect the translocation of small particles through a sensing microchannel. The device connects a fluidic circuit to the gate of a metal-oxide-semiconductor field-effect transistor (MOSFET) and detects particles by monitoring the MOSFET drain current modulation instead of the modulation in the ionic current through the sensing channel. The minimum volume ratio of the particle to the sensing channel detected is 0.006%, which is about ten times smaller than the lowest detected volume ratio previously reported in the literature. This volume ratio is detected at a noise level of about 0.6% of the baseline MOSFET drain current, clearly showing the amplification effects from the fluidic circuits and the MOSFETs. We characterize the device sensitivity as a function of the MOSFET gate potential and show that its sensitivity is higher when the MOSFET is operating below its threshold gate voltage than when it is operating above the threshold voltage. In addition, we demonstrate that the device sensitivity linearly increases with the applied electrical bias across the fluidic circuit. Finally, we show that polystyrene beads and glass beads with similar sizes can be distinguished from each other based on their different translocation times, and the size distribution of microbeads can be obtained with accuracy comparable to that of direct scanning electron microscopy measurements. PMID:19479001

  3. The response of metal-oxide-semiconductor devices irradiated at high temperatures

    NASA Astrophysics Data System (ADS)

    Schwank, James R.; Sexton, Fred W.; Fleetwood, Daniel M.; Rodgers, M. S.; Hughes, Kenneth L.

    To study the combined effects of high temperature and radiation on metal-oxide-semiconductor (MOS) integrated circuits (ICs), we have performed a series of experiments to characterize the response of MOS 16k static random access memories (SRAMs) irradiated at temperatures from 298 to 398 K. The irradiations were performed at dose rates approaching those of a spacebased nuclear reactor (approx. = 0.03 rad/s). Over the temperature range investigated, the failure dose of 16k SRAMs was found to decrease with increasing temperature due to complex interactions between radiation and temperature. Neither the failure mechanism nor the failure dose could be predicted from separate or independent measurements of room-temperature irradiation data and IC response preirradiation as a function of temperature. These results show that over the temperature range 298 to 398 K one cannot depend on elevated temperatures to extend the lifetime of ICs in a radiation environment. Extensive qualification tests must be performed if ICs on a space nuclear power platform are to exposed to high radiation levels in this temperature range. At temperatures much higher than 400 K, however, defect annealing can significantly increase the radiation tolerance of MOS circuits.

  4. The response of metal-oxide-semiconductor devices irradiated at high temperatures

    NASA Astrophysics Data System (ADS)

    Schwank, James R.; Sexton, Fred W.; Fleetwood, Daniel M.; Rodgers, M. Steven; Hughes, Kenneth L.

    To study the combined effects of high temperature and radiation on metal-oxide-semiconductor (MOS) integrated circuits (ICs), we have performed a series of experiments to characterize the response of MOS 16k static random access memories (SRAMs) irradiated at temperatures from 298 to 398 K. The irradiations were performed at dose rates approaching those of a spacebased nuclear reactor (approx. = 0.03 rad/s). Over the temperature range investigated, the failure dose of 16k SRAMs was found to decrease with increasing temperature due to complex interactions between radiation and temperature. Neither the failure mechanism nor the failure dose could be predicted from separate or independent measurements of room-temperature irradiation data and IC response preirradiation as a function of temperature. These results show that over the temperature range 298 to 398 K one cannot depend on elevated temperatures to extend the lifetime of ICs in a radiation environment. Extensive qualification tests must be performed if ICs on a space nuclear power platform are to be exposed to high radiation levels in this temperature range. At temperatures much higher than 400 K, however, defect annealing can significantly increase the radiation tolerance of MOS circuits.

  5. 3-D perpendicular assembly of single walled carbon nanotubes for complimentary metal oxide semiconductor interconnects.

    PubMed

    Kim, Tae-Hoon; Yilmaz, Cihan; Somu, Sivasubramanian; Busnaina, Ahmed

    2014-05-01

    Due to their superior electrical properties such as high current density and ballistic transport, carbon nanotubes (CNT) are considered as a potential candidate for future Very Large Scale Integration (VLSI) interconnects. However, direct incorporation of CNTs into Complimentary Metal Oxide Semiconductor (CMOS) architecture by conventional chemical vapor deposition (CVD) growth method is problematic since it requires high temperatures that might damage insulators and doped semiconductors in the underlying CMOS circuits. In this paper, we present a directed assembly method to assemble aligned CNTs into pre-patterned vias and perpendicular to the substrate. A dynamic electric field with a static offset is applied to provide the force needed for directing the SWNT assembly. It is also shown that by adjusting assembly parameters the density of the assembled CNTs can be significantly enhanced. This highly scalable directed assembly method is conducted at room temperature and pressure and is accomplished in a few minutes. I-V characterization of the assembled CNTs was conducted using a Zyvex nanomanipulator in a scanning electron microscope (SEM) and the measured value of the resistance is found to be 270 komega s. PMID:24734611

  6. Infrared rectification in a nanoantenna-coupled metal-oxide-semiconductor tunnel diode.

    PubMed

    Davids, Paul S; Jarecki, Robert L; Starbuck, Andrew; Burckel, D Bruce; Kadlec, Emil A; Ribaudo, Troy; Shaner, Eric A; Peters, David W

    2015-12-01

    Direct rectification of electromagnetic radiation is a well-established method for wireless power conversion in the microwave region of the spectrum, for which conversion efficiencies in excess of 84% have been demonstrated. Scaling to the infrared or optical part of the spectrum requires ultrafast rectification that can only be obtained by direct tunnelling. Many research groups have looked to plasmonics to overcome antenna-scaling limits and to increase the confinement. Recently, surface plasmons on heavily doped Si surfaces were investigated as a way of extending surface-mode confinement to the thermal infrared region. Here we combine a nanostructured metallic surface with a heavily doped Si infrared-reflective ground plane designed to confine infrared radiation in an active electronic direct-conversion device. The interplay of strong infrared photon-phonon coupling and electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast electronic tunnelling in metal-oxide-semiconductor (MOS) structures. Infrared dispersion of SiO2 near a longitudinal optical (LO) phonon mode gives large transverse-field confinement in a nanometre-scale oxide-tunnel gap as the wavelength-dependent permittivity changes from 1 to 0, which leads to enhanced electromagnetic fields at material interfaces and a rectified displacement current that provides a direct conversion of infrared radiation into electric current. The spectral and electrical signatures of the nanoantenna-coupled tunnel diodes are examined under broadband blackbody and quantum-cascade laser (QCL) illumination. In the region near the LO phonon resonance, we obtained a measured photoresponsivity of 2.7 mA W(-1) cm(-2) at -0.1 V. PMID:26414194

  7. Infrared rectification in a nanoantenna-coupled metal-oxide-semiconductor tunnel diode

    NASA Astrophysics Data System (ADS)

    Davids, Paul S.; Jarecki, Robert L.; Starbuck, Andrew; Burckel, D. Bruce; Kadlec, Emil A.; Ribaudo, Troy; Shaner, Eric A.; Peters, David W.

    2015-12-01

    Direct rectification of electromagnetic radiation is a well-established method for wireless power conversion in the microwave region of the spectrum, for which conversion efficiencies in excess of 84% have been demonstrated. Scaling to the infrared or optical part of the spectrum requires ultrafast rectification that can only be obtained by direct tunnelling. Many research groups have looked to plasmonics to overcome antenna-scaling limits and to increase the confinement. Recently, surface plasmons on heavily doped Si surfaces were investigated as a way of extending surface-mode confinement to the thermal infrared region. Here we combine a nanostructured metallic surface with a heavily doped Si infrared-reflective ground plane designed to confine infrared radiation in an active electronic direct-conversion device. The interplay of strong infrared photon-phonon coupling and electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast electronic tunnelling in metal-oxide-semiconductor (MOS) structures. Infrared dispersion of SiO2 near a longitudinal optical (LO) phonon mode gives large transverse-field confinement in a nanometre-scale oxide-tunnel gap as the wavelength-dependent permittivity changes from 1 to 0, which leads to enhanced electromagnetic fields at material interfaces and a rectified displacement current that provides a direct conversion of infrared radiation into electric current. The spectral and electrical signatures of the nanoantenna-coupled tunnel diodes are examined under broadband blackbody and quantum-cascade laser (QCL) illumination. In the region near the LO phonon resonance, we obtained a measured photoresponsivity of 2.7 mA W-1 cm-2 at -0.1 V.

  8. Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal-Oxide-Semiconductor Field-Effect Transistors by a Novel Direct Current Current-Voltage Technique

    NASA Astrophysics Data System (ADS)

    He, Yandong; Zhang, Ganggang

    2012-04-01

    Shallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular with its better tradeoff between breakdown voltage and on-resistance and its compatibility with the standard complementary metal-oxide-semiconductor (CMOS) process. A novel direct current current-voltage (DCIV) technique demonstrated with multiple sharp peak signals is proposed to characterize interface state generation in the channel and in the STI drift regions separately. Degradation of STI-based LDMOS transistors in various hot-carrier stress modes is investigated experimentally by proposed technique. A two-dimensional numerical device simulation is performed to obtain insight into the proposed technique and device degradation characteristics under hot-carrier stress conditions. The impact of interface state location on device electrical characteristics is analyzed from measurement and simulation. Our results show that the maximum Isub stress becomes the worst hot-carrier degradation mode in term of the on-resistance degradation, which is attributed to interface state generation under STI drift region.

  9. Gate length and temperature dependence of negative differential transconductance in silicon quantum well metal-oxide-semiconductor field-effect transistors

    SciTech Connect

    Naquin, Clint; Lee, Mark; Edwards, Hal; Mathur, Guru; Chatterjee, Tathagata; Maggio, Ken

    2015-09-28

    Introducing quantum transport into silicon transistors in a manner compatible with industrial fabrication has the potential to transform the performance horizons of large scale integrated silicon devices and circuits. Explicit quantum transport as evidenced by negative differential transconductances (NDTCs) has been observed in a set of quantum well (QW) transistors fabricated using industrial silicon complementary metal-oxide-semiconductor processing. Detailed gate length and temperature dependence characteristics of the NDTCs in these devices have been measured. The QW potential was formed via lateral ion implantation doping on a commercial 45 nm technology node process line, and measurements of the transfer characteristics show NDTCs up to room temperature. Gate length dependence of NDTCs shows a correlation of the interface channel length with the number of NDTCs formed as well as with the gate voltage (V{sub G}) spacing between NDTCs. The V{sub G} spacing between multiple NDTCs suggests a quasi-parabolic QW potential profile. The temperature dependence is consistent with partial freeze-out of carrier concentration against a degenerately doped background.

  10. Memory effects in a Al/Ti:HfO2/CuPc metal-oxide-semiconductor device

    NASA Astrophysics Data System (ADS)

    Tripathi, Udbhav; Kaur, Ramneek

    2016-05-01

    Metal oxide semiconductor structured organic memory device has been successfully fabricated. Ti doped hafnium oxide (Ti:HfO2) nanoparticles has been fabricated by precipitation method and further calcinated at 800 °C. Copper phthalocyanine, a hole transporting material has been utilized as an organic semiconductor. The electrical properties of the fabricated device have been studied by measuring the current-voltage and capacitance-voltage characteristics. The amount of charge stored in the nanoparticles has been calculated by using flat band condition. This simple approach for fabricating MOS memory device has opens up opportunities for the development of next generation memory devices.

  11. C-V measurements of micron diameter metal-oxide-semiconductor capacitors using a scanning-electron-microscope-based nanoprobe.

    PubMed

    Zheng, T; Jia, H; Wallace, R M; Gnade, B E

    2007-10-01

    The C-V electrical characterization of microstructures on a standard probe station is limited by the magnification of the imaging system and the precision of the probe manipulators. To overcome these limitations, we examine the combination of in situ electrical probing and a dual column scanning electron microscope/focused ion beam system. The imaging parameters and probing procedures are carefully chosen to reduce e-beam damage to the metal oxide semiconductor capacitor device under test. Estimation of shunt capacitance is critical when making femtofarad level measurements. C-V measurements of micron size metal-oxide-silicon capacitors are demonstrated. PMID:17979444

  12. Plasmonic nanohole arrays on Si-Ge heterostructures: an approach for integrated biosensors

    NASA Astrophysics Data System (ADS)

    Augel, L.; Fischer, I. A.; Dunbar, L. A.; Bechler, S.; Berrier, A.; Etezadi, D.; Hornung, F.; Kostecki, K.; Ozdemir, C. I.; Soler, M.; Altug, H.; Schulze, J.

    2016-03-01

    Nanohole array surface plasmon resonance (SPR) sensors offer a promising platform for high-throughput label-free biosensing. Integrating nanohole arrays with group-IV semiconductor photodetectors could enable low-cost and disposable biosensors compatible to Si-based complementary metal oxide semiconductor (CMOS) technology that can be combined with integrated circuitry for continuous monitoring of biosamples and fast sensor data processing. Such an integrated biosensor could be realized by structuring a nanohole array in the contact metal layer of a photodetector. We used Fouriertransform infrared spectroscopy to investigate nanohole arrays in a 100 nm Al film deposited on top of a vertical Si-Ge photodiode structure grown by molecular beam epitaxy (MBE). We find that the presence of a protein bilayer, constitute of protein AG and Immunoglobulin G (IgG), leads to a wavelength-dependent absorptance enhancement of ~ 8 %.

  13. HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer

    NASA Astrophysics Data System (ADS)

    Kim, Hyoung-Sub; Ok, I.; Zhang, M.; Zhu, F.; Park, S.; Yum, J.; Zhao, H.; Lee, Jack C.; Majhi, Prashant

    2008-09-01

    In this letter, we present our experimental results of HfO2-based n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) and metal-oxide-semiconductor capacitors (MOSCAPs) on indium phosphide (InP) substrates using a thin germanium (Ge) interfacial passivation layer (IPL). We found that MOSCAPs on n-InP substrates showed good C-V characteristics such as a small capacitance equivalent thickness (14Å ), a small frequency dispersion (<10% and <200mV), and a low dielectric leakage current (˜5×10-4A/cm2 at Vg=1.5V), whereas MOSCAPs on p-InP exhibited poor characteristics, implying severe Fermi level pinning. It was also found that InP was more vulnerable to a high temperature process such that C-V curves showed a characteristic "bump" and inversion capacitance at relatively high frequencies. From n-channel MOSFETs on a semi-insulating InP substrate using Ge IPL, HfO2, and TaN gate electrodes, excellent electrical characteristics such as a large transconductance (9.3mS /mm) and large drain currents (12.3mA/mm at Vd=2V and Vg=Vth+2V) were achieved, which are comparable to other works.

  14. A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands

    NASA Astrophysics Data System (ADS)

    Ren, Min; Li, Ze-Hong; Liu, Xiao-Long; Xie, Jia-Xiong; Deng, Guang-Min; Zhang, Bo

    2011-12-01

    A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (Ron,sp), whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its Ron,sp is deduced, the influence of structure parameters on the breakdown voltage (BV) and Ron,sp are investigated, and the optimized results with BV of 83 V and Ron,sp of 54 mΩ·mm2 are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET) has a superior “Ron,sp/BV" trade-off to the conventional VDMOS (a 38% reduction of Ron,sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10% reduction of Ron,sp with the same BV). The inhomogeneous-floating-islands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively.

  15. Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 A˚

    NASA Astrophysics Data System (ADS)

    Chen, Yen-Ting; Zhao, Han; Yum, Jung Hwan; Wang, Yanzhen; Lee, Jack C.

    2009-05-01

    In this letter, we demonstrate the electrical properties of metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field-effect transistors (MOSFETs) on InP using atomic layer deposited HfO2 gate dielectric and a thin silicon interface passivation layer (Si IPL). Compared with single HfO2, the use of Si IPL results in better interface quality with InP substrate, as illustrated by smaller frequency dispersion and reduced hysteresis. MOSFETs with Si IPL show much higher drive current and transconductance, improved subthreshold swing, interface-trap density and gate leakage current with equivalent oxide thickness scaling down to 18 Å.

  16. Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

    NASA Technical Reports Server (NTRS)

    Kashkarov, P. K.; Kazior, T. E.; Lagowski, J.; Gatos, H. C.

    1983-01-01

    An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

  17. Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO{sub 2} films on silicon

    SciTech Connect

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang Yang, Deren

    2015-03-15

    We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with the CeO{sub 2} films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS device with the 550 °C-annealed CeO{sub 2} film is much stronger than that from the counterpart with the 450 °C-annealed CeO{sub 2} film. This is due to that the 550 °C-annealed CeO{sub 2} film contains more Ce{sup 3+} ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f{sup 1} energy band pertaining to Ce{sup 3+} ions leads to the UV-Vis EL.

  18. Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

    SciTech Connect

    Spathis, C. Birbas, A.; Georgakopoulou, K.

    2015-08-15

    Device white noise levels in short channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) dictate the performance and reliability of high-frequency circuits ranging from high-speed microprocessors to Low-Noise Amplifiers (LNAs) and microwave circuits. Recent experimental noise measurements with very short devices demonstrate the existence of suppressed shot noise, contrary to the predictions of classical channel thermal noise models. In this work we show that, as the dimensions continue to shrink, shot noise has to be considered when the channel resistance becomes comparable to the barrier resistance at the source-channel junction. By adopting a semi-classical approach and taking retrospectively into account transport, short-channel and quantum effects, we investigate the partitioning between shot and thermal noise, and formulate a predictive model that describes the noise characteristics of modern devices.

  19. Drift region doping effects on characteristics and reliability of high-voltage n-type metal-oxide-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Chen, Jone F.; Chang, Chun-Po; Liu, Yu Ming; Tsai, Yan-Lin; Hsu, Hao-Tang; Chen, Chih-Yuan; Hwang, Hann-Ping

    2016-01-01

    In this study, off-state breakdown voltage (VBD) and hot-carrier-induced degradation in high-voltage n-type metal-oxide-semiconductor transistors with various BF2 implantation doses in the n- drift region are investigated. Results show that a higher BF2 implantation dose results in a higher VBD but leads to a greater hot-carrier-induced device degradation. Experimental data and technology computer-aided design simulations suggest that the higher VBD is due to the suppression of gate-induced drain current. On the other hand, the greater hot-carrier-induced device degradation can be explained by a lower net donor concentration and a different current-flow path, which is closer to the Si-SiO2 interface.

  20. A model for the frequency dispersion of the high-k metal-oxide-semiconductor capacitance in accumulation

    NASA Astrophysics Data System (ADS)

    Yao, B.; Fang, Z. B.; Zhu, Y. Y.; Ji, T.; He, G.

    2012-05-01

    High-frequency capacitance-voltage measurements have been made on metal-oxide-semiconductor capacitors by using single crystalline Er2O3 high-k gate dielectrics. Based on our analysis, it has been found that frequency dispersion of Er2O3 capacitance in accumulation decreases consistently with the increase of the frequency. A correction model is proposed to explain these frequency dispersion phenomena and the capacitance-frequency equations are obtained from the impedance expression of the equivalent circuit. Based on the simulated capacitance-frequency, it can be concluded that frequency dispersion of Er2O3 capacitance in accumulation originates from the existence of the parasitic resistances, the series resistances, and the formed SiOx interfacial layer.

  1. SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.

    PubMed

    Du, Wei; Inokawa, Hiroshi; Satoh, Hiroaki; Ono, Atsushi

    2011-08-01

    In this Letter, a scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) is characterized as a photon detector, where photogenerated individual holes are trapped below the negatively biased gate and modulate stepwise the electron current flowing in the bottom channel induced by the positive substrate bias. The output waveforms exhibit clear separation of current levels corresponding to different numbers of trapped holes. Considering this capability of single-hole counting, a small dark count of less than 0.02 s(-1) at room temperature, and low operation voltage of 1 V, SOI MOSFET could be a unique photon-number-resolving detector if the small quantum efficiency were improved. PMID:21808317

  2. A Low-Leakage Epitaxial High-κ Gate Oxide for Germanium Metal-Oxide-Semiconductor Devices.

    PubMed

    Hu, Chengqing; McDaniel, Martin D; Jiang, Aiting; Posadas, Agham; Demkov, Alexander A; Ekerdt, John G; Yu, Edward T

    2016-03-01

    Germanium (Ge)-based metal-oxide-semiconductor field-effect transistors are a promising candidate for high performance, low power electronics at the 7 nm technology node and beyond. However, the availability of high quality gate oxide/Ge interfaces that provide low leakage current density and equivalent oxide thickness (EOT), robust scalability, and acceptable interface state density (Dit) has emerged as one of the most challenging hurdles in the development of such devices. Here we demonstrate and present detailed electrical characterization of a high-κ epitaxial oxide gate stack based on crystalline SrHfO3 grown on Ge (001) by atomic layer deposition. Metal-oxide-Ge capacitor structures show extremely low gate leakage, small and scalable EOT, and good and reducible Dit. Detailed growth strategies and postgrowth annealing schemes are demonstrated to reduce Dit. The physical mechanisms behind these phenomena are studied and suggest approaches for further reduction of Dit. PMID:26859048

  3. Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

    NASA Astrophysics Data System (ADS)

    Fiorenza, Patrick; Greco, Giuseppe; Iucolano, Ferdinando; Patti, Alfonso; Roccaforte, Fabrizio

    2015-04-01

    In this letter, slow and fast trap states in metal-oxide-semiconductor (MOS) capacitors fabricated on recessed AlGaN/GaN heterostructures were studied by frequency dependent conductance measurements. In particular, the comparison of devices before and after annealing in forming gas allowed to ascribe the fast states (with characteristic response time in the range of 5-50 μs) to SiO2/GaN "interface traps," and the slow states (50-100 μs) to "border traps" located few nanometers inside the SiO2 layer. These results can be important to predict and optimize the threshold voltage stability of hybrid MOS-based transistors on GaN.

  4. Response of a metal-oxide-semiconductor field-effect transistor to a cosmic-ray ion track

    NASA Technical Reports Server (NTRS)

    Benumof, Reuben; Zoutendyk, John

    1987-01-01

    A cosmic-ray ion track passing perpendicularly through the oxide layer of an enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) forms a conducting path, the resistance of which is proportional to the stopping power of the cosmic ion and independent of the cross-sectional area of the ion track. The voltage across the oxide capacitance may drop below the threshold voltage if the gate bias is sufficiently low or if the external resistance in the gate-source circuit is sufficiently high. The first of a pair of MOSFETs forming a flip-flop circuit may thus be turned off, and the second transitor may turn on, providing it has a sufficiently short delay time, thereby completing a single-event upset.

  5. The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-05-01

    Dispersion in accumulation is a widely observed phenomenon in technologically important InGaAs gate stacks. Two principal different interface defects were proposed as the physical origin of this phenomenon—disorder induced gap states and border traps. While the gap states are located at the semiconductor side of the interface, the border traps are related to the dielectric side. The study of Al2O3, HfO2, and an intermediate composition of HfxAlyO deposited on InGaAs enabled us to find a correlation between the dispersion and the dielectric/InGaAs band offset. At the same time, no change in the dispersion was observed after applying an effective pre-deposition treatment which results in significant reduction of the interface states. Both observations prove that border traps are the physical origin of the dispersion in accumulation in InGaAs based metal-oxide-semiconductor gate stacks.

  6. GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

    NASA Astrophysics Data System (ADS)

    Zhao, Lian-Feng; Tan, Zhen; Wang, Jing; Xu, Jun

    2015-01-01

    GaSb p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two temperature regions, and the underlying mechanisms are discussed. It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current, which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions. Methods to further reduce the off-state drain leakage current are given. Project supported by the National Basic Research Program of China (Grant No. 2011CBA00602) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02708-002).

  7. Anisotropy of piezoresistance in n-channel inversion layers of metal-oxide-semiconductor transistors on (001)Si

    NASA Astrophysics Data System (ADS)

    Maruyama, T.; Zaima, S.; Koide, Y.; Kanda, Y.; Yasuda, Y.

    1990-12-01

    The crystallographic orientation dependence of piezoresistance of n-channel inversion layers in metal-oxide-semiconductor field-effect transistors on p-type (001)Si has been studied by using a diaphragm at room temperature. The experimental results have been compared with self-consistent calculations based on a surface quantization effect. The main feature of the crystallographic orientation dependence can be explained by an electron repopulation effect induced by applied strain and an effective mass anisotropy. It can be found that the difference between longitudinal and transverse piezoresistance in the devices nearly along the [110] directions is mainly due to an orthorhombic distortion of Si, and the shear deformation coefficients Ξu is determined to be 5.8 eV from comparing the experimental results with the calculated ones. An expression of the shear piezoresistance component π44 is also derived.

  8. A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

    SciTech Connect

    Cho, Edward Namkyu; Shin, Yong Hyeon; Yun, Ilgu

    2014-11-07

    A compact quantum correction model for a symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (ΔV{sub TH}{sup QM}) and the gate capacitance (C{sub g}) degradation. First of all, ΔV{sub TH}{sup QM} induced by quantum mechanical (QM) effects is modeled. The C{sub g} degradation is then modeled by introducing the inversion layer centroid. With ΔV{sub TH}{sup QM} and the C{sub g} degradation, the QM effects are implemented in previously reported classical model and a comparison between the proposed quantum correction model and numerical simulation results is presented. Based on the results, the proposed quantum correction model can be applicable to the compact model of DG MOSFET.

  9. Impedance analysis of Al{sub 2}O{sub 3}/H-terminated diamond metal-oxide-semiconductor structures

    SciTech Connect

    Liao, Meiyong; Liu, Jiangwei; Imura, Masataka; Koide, Yasuo; Sang, Liwen; Coathup, David; Li, Jiangling; Ye, Haitao

    2015-02-23

    Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al{sub 2}O{sub 3} is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

  10. Electrical Characterization of Metal-Oxide-Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots

    NASA Astrophysics Data System (ADS)

    Pei, Yan-Li; Fukushima, Takafumi; Tanaka, Tetsu; Koyanagi, Mitsumasa

    2008-04-01

    Tungsten nanodots (W-NDs) with an ultrahigh density of 1×1013/cm2 and a small size of around of 1.5-2 nm were successfully formed by self-assembled nanodot deposition (SAND). A metal-oxide-semiconductor (MOS) memory device was also fabricated with a W-ND layer placed between tunneling SiO2 and block SiO2. Using this device, the effects of annealing on the capacitance characteristics were investigated in detail. After 900 °C post deposition annealing (PDA), an extremely large memory window of about 9.2 V was obtained, indicating that the device is a strong contender for future nonvolatile memory (NVM) applications. The program/erase speed and retention characteristics were also evaluated. The oxidation of tungsten by oxygen from the cosputtered silicon oxide was confirmed by X-ray photoelectron spectroscopy (XPS) measurement. It is considered to degrade the retention characteristics of MOS memory devices.

  11. Charge-flow structures as polymeric early-warning fire alarm devices. M.S. Thesis; [metal oxide semiconductors

    NASA Technical Reports Server (NTRS)

    Sechen, C. M.; Senturia, S. D.

    1977-01-01

    The charge-flow transistor (CFT) and its applications for fire detection and gas sensing were investigated. The utility of various thin film polymers as possible sensing materials was determined. One polymer, PAPA, showed promise as a relative humidity sensor; two others, PFI and PSB, were found to be particularly suitable for fire detection. The behavior of the charge-flow capacitor, which is basically a parallel-plate capacitor with a polymer-filled gap in the metallic tip electrode, was successfully modeled as an RC transmission line. Prototype charge-flow transistors were fabricated and tested. The effective threshold voltage of this metal oxide semiconductor was found to be dependent on whether surface or bulk conduction in the thin film was dominant. Fire tests with a PFI-coated CFT indicate good sensitivity to smouldering fires.

  12. Model for the field effect from layers of biological macromolecules on the gates of metal-oxide-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Landheer, D.; Aers, G.; McKinnon, W. R.; Deen, M. J.; Ranuarez, J. C.

    2005-08-01

    The potential diagram for field-effect transistors used to detect charged biological macromolecules in an electrolyte is presented for the case where an insulating cover layer is used over a conventional eletrolyte-insulator metal-oxide-semiconductor (EIMOS) structure to tether or bind the biological molecules to a floating gate. The layer of macromolecules is modeled using the Poisson-Boltzmann equation for an ion-permeable membrane. Expressions are derived for the charges and potentials in the EIMOS and electrolyte-insulator-semiconductor structures, including the membrane and electrolyte. Exact solutions for the potentials and charges are calculated using numerical algorithms. Simple expressions for the response are presented for low solution potentials when the Donnan potential is approached in the bulk of the membrane. The implications of the model for the small-signal equivalent circuit and the noise analysis of these structures are discussed.

  13. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

    NASA Astrophysics Data System (ADS)

    Kodama, Masahito; Sugimoto, Masahiro; Hayashi, Eiko; Soejima, Narumasa; Ishiguro, Osamu; Kanechika, Masakazu; Itoh, Kenji; Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu

    2008-02-01

    A novel method for fabricating trench structures on GaN was developed. A smooth non-polar (1100) plane was obtained by wet etching using tetramethylammonium hydroxide (TMAH) as the etchant. A U-shape trench with the (1100) plane side walls was formed with dry etching and the TMAH wet etching. A U-shape trench gate metal oxide semiconductor field-effect transistor (MOSFET) was also fabricated using the novel etching technology. This device has the excellent normally-off operation of drain current-gate voltage characteristics with the threshold voltage of 10 V. The drain breakdown voltage of 180 V was obtained. The results indicate that the trench gate structure can be applied to GaN-based transistors.

  14. Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

    NASA Astrophysics Data System (ADS)

    Inaba, Masafumi; Muta, Tsubasa; Kobayashi, Mikinori; Saito, Toshiki; Shibata, Masanobu; Matsumura, Daisuke; Kudo, Takuya; Hiraiwa, Atsushi; Kawarada, Hiroshi

    2016-07-01

    The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al2O3. Using Al2O3 as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

  15. Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

    PubMed

    Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min

    2014-10-20

    In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication. PMID:25607316

  16. Anomalous degradation of low-field mobility in short-channel metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Natori, Kenji; Iwai, Hiroshi; Kakushima, Kuniyuki

    2015-12-01

    The anomalous degradation of the low-field mobility observed in short-channel metal-oxide-semiconductor field-effect transistors is analyzed by collating various reported data in experiments and simulations. It is inferred that the degradation is not caused by the channel scattering of the carriers. The origin is proposed to be the backscattering of channel carriers on injection into the drain. The expression of the low-field mobility, including the backscattering effect, is derived. The inverse of the low-field mobility is a linear function of the inverse of channel length, the expression of which reproduces that empirically derived by Bidal's group. By fitting the expression to simulated as well as experimental data, we can estimate the value of parameters related to the channel scattering and also to the backscattering from the drain. We find that these values are in reasonable magnitude.

  17. Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Ma, Li-Juan; Ji, Xiao-Li; Chen, Yuan-Cong; Xia, Hao-Guang; Zhu, Chen-Xin; Guo, Qiang; Yan, Feng

    2014-09-01

    The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method, the direct Id—Vgs method, the conductance method and the Y-function method, are evaluated on 32 nm n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs). It is found that Rsd achieved from the constant-mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs.

  18. Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

    SciTech Connect

    Kim, SangHyeon E-mail: sh-kim@kist.re.kr; Yokoyama, Masafumi; Nakane, Ryosho; Takenaka, Mitsuru; Takagi, Shinichi; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko

    2014-06-30

    We have investigated effects of the vertical scaling on electrical properties in extremely thin-body InAs-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs). It is found that the body thickness (T{sub body}) scaling provides better short channel effect (SCE) control, whereas the T{sub body} scaling also causes the reduction of the mobility limited by channel thickness fluctuation (δT{sub body}) scattering (μ{sub fluctuation}). Also, in order to achieve better SCEs control, the thickness of InAs channel layer (T{sub channel}) scaling is more favorable than the thickness of MOS interface buffer layer (T{sub buffer}) scaling from a viewpoint of a balance between SCEs control and μ{sub fluctuation} reduction. These results indicate necessity of quantum well channel structure in InAs-OI MOSFETs and these should be considered in future transistor design.

  19. Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor

    NASA Astrophysics Data System (ADS)

    Maréchal, A.; Aoukar, M.; Vallée, C.; Rivière, C.; Eon, D.; Pernot, J.; Gheeraert, E.

    2015-10-01

    Diamond metal-oxide-semiconductor capacitors were prepared using atomic layer deposition at 250 °C of Al2O3 on oxygen-terminated boron doped (001) diamond. Their electrical properties were investigated in terms of capacitance and current versus voltage measurements. Performing X-ray photoelectron spectroscopy based on the measured core level energies and valence band maxima, the interfacial energy band diagram configuration of the Al2O3/O-diamond is established. The band diagram alignment is concluded to be of type I with valence band offset Δ E v of 1.34 ± 0.2 eV and conduction band offset Δ E c of 0.56 ± 0.2 eV considering an Al2O3 energy band gap of 7.4 eV. The agreement with electrical measurement and the ability to perform a MOS transistor are discussed.

  20. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer.

    PubMed

    Nayak, Pradipta K; Caraveo-Frescas, J A; Wang, Zhenwei; Hedhili, M N; Wang, Q X; Alshareef, H N

    2014-01-01

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350 °C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications. PMID:24728223

  1. Modeling the dark current histogram induced by gold contamination in complementary-metal-oxide-semiconductor image sensors

    NASA Astrophysics Data System (ADS)

    Domengie, F.; Morin, P.; Bauza, D.

    2015-07-01

    We propose a model for dark current induced by metallic contamination in a CMOS image sensor. Based on Shockley-Read-Hall kinetics, the expression of dark current proposed accounts for the electric field enhanced emission factor due to the Poole-Frenkel barrier lowering and phonon-assisted tunneling mechanisms. To that aim, we considered the distribution of the electric field magnitude and metal atoms in the depth of the pixel. Poisson statistics were used to estimate the random distribution of metal atoms in each pixel for a given contamination dose. Then, we performed a Monte-Carlo-based simulation for each pixel to set the number of metal atoms the pixel contained and the enhancement factor each atom underwent, and obtained a histogram of the number of pixels versus dark current for the full sensor. Excellent agreement with the dark current histogram measured on an ion-implanted gold-contaminated imager has been achieved, in particular, for the description of the distribution tails due to the pixel regions in which the contaminant atoms undergo a large electric field. The agreement remains very good when increasing the temperature by 15 °C. We demonstrated that the amplification of the dark current generated for the typical electric fields encountered in the CMOS image sensors, which depends on the nature of the metal contaminant, may become very large at high electric field. The electron and hole emissions and the resulting enhancement factor are described as a function of the trap characteristics, electric field, and temperature.

  2. Soft breakdown characteristics of ultralow-k time-dependent dielectric breakdown for advanced complementary metal-oxide semiconductor technologies

    NASA Astrophysics Data System (ADS)

    Chen, Fen; Shinosky, Michael

    2010-09-01

    During technology development, the study of ultralow-k (ULK) time-dependent dielectric breakdown (TDDB) is important for assuring robust reliability. As the technology advances, the increase in ULK leakage current noise level and reversible current change induced by soft breakdown (SBD) during stress has been observed. In this paper, the physical origin of SBD and reversible breakdown, and its correlation to conventional hard breakdowns (HBDs) were extensively studied. Based on constant voltage stress (CVS) and constant current stress (CCS) results, it was concluded that SBD in ULK is an intrinsic characteristic for ULK material, and all first breakdown events most likely are soft instead of hard. Therefore, a unified understanding of SBD and HBD for low-k TDDB was established. Furthermore, the post-SBD and HBD breakdown conduction characteristics were explored and their impacts on circuit operation were discussed. Based on current limited constant voltage stress studies, it was found that the power dissipation, not the stored energy, determined the severity of ULK dielectric breakdown, and the postbreakdown conduction properties. A percolation-threshold controlled, variable-range-hopping (VRH) model was proposed to explain all postbreakdown aspects of SBD and HBD of ULK material.

  3. Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer

    PubMed Central

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wang, Zhenwei; Hedhili, M. N.; Wang, Q. X.; Alshareef, H. N.

    2014-01-01

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350°C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications. PMID:24728223

  4. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    SciTech Connect

    Jovanović, B. E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L.

    2014-04-07

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

  5. Modeling the dark current histogram induced by gold contamination in complementary-metal-oxide-semiconductor image sensors

    SciTech Connect

    Domengie, F. Morin, P.; Bauza, D.

    2015-07-14

    We propose a model for dark current induced by metallic contamination in a CMOS image sensor. Based on Shockley-Read-Hall kinetics, the expression of dark current proposed accounts for the electric field enhanced emission factor due to the Poole-Frenkel barrier lowering and phonon-assisted tunneling mechanisms. To that aim, we considered the distribution of the electric field magnitude and metal atoms in the depth of the pixel. Poisson statistics were used to estimate the random distribution of metal atoms in each pixel for a given contamination dose. Then, we performed a Monte-Carlo-based simulation for each pixel to set the number of metal atoms the pixel contained and the enhancement factor each atom underwent, and obtained a histogram of the number of pixels versus dark current for the full sensor. Excellent agreement with the dark current histogram measured on an ion-implanted gold-contaminated imager has been achieved, in particular, for the description of the distribution tails due to the pixel regions in which the contaminant atoms undergo a large electric field. The agreement remains very good when increasing the temperature by 15 °C. We demonstrated that the amplification of the dark current generated for the typical electric fields encountered in the CMOS image sensors, which depends on the nature of the metal contaminant, may become very large at high electric field. The electron and hole emissions and the resulting enhancement factor are described as a function of the trap characteristics, electric field, and temperature.

  6. Characterization of near-terahertz complementary metal-oxide semiconductor circuits using a Fourier-transform interferometer

    DOE PAGESBeta

    Arenas, D. J.; Shim, Dongha; Koukis, D. I.; Seok, Eunyoung; Tanner, D. B.; O, Kenneth K.

    2011-10-24

    Optical methods for measuring of the emission spectra of oscillator circuits operating in the 400-600 GHz range are described. The emitted power from patch antennas included in the circuits is measured by placing the circuit in the source chamber of a Fourier-transform interferometric spectrometer. The results show that this optical technique is useful for measuring circuits pushing the frontier in operating frequency. The technique also allows the characterization of the circuit by measuring the power radiated in the fundamental and in the harmonics. This capability is useful for oscillator architectures designed to cancel the fundamental and use higher harmonics. Themore » radiated power was measured using two techniques: direct measurement of the power by placing the device in front of a bolometer of known responsivity, and by comparison to the estimated power from blackbody sources. The latter technique showed that these circuits have higher emission than blackbody sources at the operating frequencies, and, therefore, offer potential spectroscopy applications.« less

  7. Characterization of near-terahertz complementary metal-oxide semiconductor circuits using a Fourier-transform interferometer.

    PubMed

    Arenas, D J; Shim, Dongha; Koukis, D I; Seok, Eunyoung; Tanner, D B; O, Kenneth K

    2011-10-01

    Optical methods for measuring of the emission spectra of oscillator circuits operating in the 400-600 GHz range are described. The emitted power from patch antennas included in the circuits is measured by placing the circuit in the source chamber of a Fourier-transform interferometric spectrometer. The results show that this optical technique is useful for measuring circuits pushing the frontier in operating frequency. The technique also allows the characterization of the circuit by measuring the power radiated in the fundamental and in the harmonics. This capability is useful for oscillator architectures designed to cancel the fundamental and use higher harmonics. The radiated power was measured using two techniques: direct measurement of the power by placing the device in front of a bolometer of known responsivity, and by comparison to the estimated power from blackbody sources. The latter technique showed that these circuits have higher emission than blackbody sources at the operating frequencies, and, therefore, offer potential spectroscopy applications. PMID:22047279

  8. Image stacking approach to increase sensitivity of fluorescence detection using a low cost complementary metal-oxide-semiconductor (CMOS) webcam.

    PubMed

    Balsam, Joshua; Bruck, Hugh Alan; Kostov, Yordan; Rasooly, Avraham

    2012-01-01

    Optical technologies are important for biological analysis. Current biomedical optical analyses rely on high-cost, high-sensitivity optical detectors such as photomultipliers, avalanched photodiodes or cooled CCD cameras. In contrast, Webcams, mobile phones and other popular consumer electronics use lower-sensitivity, lower-cost optical components such as photodiodes or CMOS sensors. In order for consumer electronics devices, such as webcams, to be useful for biomedical analysis, they must have increased sensitivity. We combined two strategies to increase the sensitivity of CMOS-based fluorescence detector. We captured hundreds of low sensitivity images using a Webcam in video mode, instead of a single image typically used in cooled CCD devices.We then used a computational approach consisting of an image stacking algorithm to remove the noise by combining all of the images into a single image. While video mode is widely used for dynamic scene imaging (e.g. movies or time-lapse photography), it is not used to capture a single static image, which removes noise and increases sensitivity by more than thirty fold. The portable, battery-operated Webcam-based fluorometer system developed here consists of five modules: (1) a low cost CMOS Webcam to monitor light emission, (2) a plate to perform assays, (3) filters and multi-wavelength LED illuminator for fluorophore excitation, (4) a portable computer to acquire and analyze images, and (5) image stacking software for image enhancement. The samples consisted of various concentrations of fluorescein, ranging from 30 μM to 1000 μM, in a 36-well miniature plate. In the single frame mode, the fluorometer's limit-of-detection (LOD) for fluorescein is ∼1000 μM, which is relatively insensitive. However, when used in video mode combined with image stacking enhancement, the LOD is dramatically reduced to 30 μM, sensitivity which is similar to that of state-of-the-art ELISA plate photomultiplier-based readers. Numerous medical diagnostics assays rely on optical and fluorescence readers. Our novel combination of detection technologies, which is new to biodetection may enable the development of new low cost optical detectors based on an inexpensive Webcam (<$10). It has the potential to form the basis for high sensitivity, low cost medical diagnostics in resource-poor settings. PMID:23990697

  9. Design and evaluation of basic standard encryption algorithm modules using nanosized complementary metal oxide semiconductor molecular circuits

    NASA Astrophysics Data System (ADS)

    Masoumi, Massoud; Raissi, Farshid; Ahmadian, Mahmoud; Keshavarzi, Parviz

    2006-01-01

    We are proposing that the recently proposed semiconductor-nanowire-molecular architecture (CMOL) is an optimum platform to realize encryption algorithms. The basic modules for the advanced encryption standard algorithm (Rijndael) have been designed using CMOL architecture. The performance of this design has been evaluated with respect to chip area and speed. It is observed that CMOL provides considerable improvement over implementation with regular CMOS architecture even with a 20% defect rate. Pseudo-optimum gate placement and routing are provided for Rijndael building blocks and the possibility of designing high speed, attack tolerant and long key encryptions are discussed.

  10. An ultrasensitive method of real time pH monitoring with complementary metal oxide semiconductor image sensor.

    PubMed

    Devadhasan, Jasmine Pramila; Kim, Sanghyo

    2015-02-01

    CMOS sensors are becoming a powerful tool in the biological and chemical field. In this work, we introduce a new approach on quantifying various pH solutions with a CMOS image sensor. The CMOS image sensor based pH measurement produces high-accuracy analysis, making it a truly portable and user friendly system. pH indicator blended hydrogel matrix was fabricated as a thin film to the accurate color development. A distinct color change of red, green and blue (RGB) develops in the hydrogel film by applying various pH solutions (pH 1-14). The semi-quantitative pH evolution was acquired by visual read out. Further, CMOS image sensor absorbs the RGB color intensity of the film and hue value converted into digital numbers with the aid of an analog-to-digital converter (ADC) to determine the pH ranges of solutions. Chromaticity diagram and Euclidean distance represent the RGB color space and differentiation of pH ranges, respectively. This technique is applicable to sense the various toxic chemicals and chemical vapors by situ sensing. Ultimately, the entire approach can be integrated into smartphone and operable with the user friendly manner. PMID:25597802

  11. Characterization of near-terahertz complementary metal-oxide semiconductor circuits using a Fourier-transform interferometer

    SciTech Connect

    Arenas, D. J.; Shim, Dongha; Koukis, D. I.; Seok, Eunyoung; Tanner, D. B.; O, Kenneth K.

    2011-10-24

    Optical methods for measuring of the emission spectra of oscillator circuits operating in the 400-600 GHz range are described. The emitted power from patch antennas included in the circuits is measured by placing the circuit in the source chamber of a Fourier-transform interferometric spectrometer. The results show that this optical technique is useful for measuring circuits pushing the frontier in operating frequency. The technique also allows the characterization of the circuit by measuring the power radiated in the fundamental and in the harmonics. This capability is useful for oscillator architectures designed to cancel the fundamental and use higher harmonics. The radiated power was measured using two techniques: direct measurement of the power by placing the device in front of a bolometer of known responsivity, and by comparison to the estimated power from blackbody sources. The latter technique showed that these circuits have higher emission than blackbody sources at the operating frequencies, and, therefore, offer potential spectroscopy applications.

  12. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    NASA Astrophysics Data System (ADS)

    Jovanović, B.; Brum, R. M.; Torres, L.

    2014-04-01

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

  13. Biodegradable elastomers and silicon nanomembranes/nanoribbons for stretchable, transient electronics, and biosensors.

    PubMed

    Hwang, Suk-Won; Lee, Chi Hwan; Cheng, Huanyu; Jeong, Jae-Woong; Kang, Seung-Kyun; Kim, Jae-Hwan; Shin, Jiho; Yang, Jian; Liu, Zhuangjian; Ameer, Guillermo A; Huang, Yonggang; Rogers, John A

    2015-05-13

    Transient electronics represents an emerging class of technology that exploits materials and/or device constructs that are capable of physically disappearing or disintegrating in a controlled manner at programmed rates or times. Inorganic semiconductor nanomaterials such as silicon nanomembranes/nanoribbons provide attractive choices for active elements in transistors, diodes and other essential components of overall systems that dissolve completely by hydrolysis in biofluids or groundwater. We describe here materials, mechanics, and design layouts to achieve this type of technology in stretchable configurations with biodegradable elastomers for substrate/encapsulation layers. Experimental and theoretical results illuminate the mechanical properties under large strain deformation. Circuit characterization of complementary metal-oxide-semiconductor inverters and individual transistors under various levels of applied loads validates the design strategies. Examples of biosensors demonstrate possibilities for stretchable, transient devices in biomedical applications. PMID:25706246

  14. Low-Temperature Solution Processing of Amorphous Metal Oxide Semiconductors for High-Performance Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Hennek, Jonathan W.

    The growing field of large-area flexible electronics presents the need for amorphous materials with electrical performances superior to amorphous hydrogenated silicon (a-Si:H). Metal oxide semiconductors show great promise in thin film transistors (TFTs) due to their high electron mobility (micro, 1--100 cm2V-1s-1), mechanical flexibility, and electrical stability. However, most oxide semiconductor fabrication still relies on expensive, inflexible and energy intensive vacuum deposition methods. To overcome these limitations, my thesis work has focused on developing low-temperature solution processing routes to functional metal oxide materials. In Chapter 2, we demonstrate an optimized "ink" and printing process for inkjet patterning of amorphous indium gallium zinc oxide (a-IGZO) and investigate the effects of device structure on derived electron mobility. Bottom-gate top-contact (BGTC) TFTs are fabricated and shown to exhibit electron mobilities comparable to a-Si:H. Furthermore, a record micro of 2.5 cm 2V-1s-1 is demonstrated for bottom-gate bottom-contact (BGBC) TFTs. The mechanism underlying such impressive performance is investigated using transmission line techniques, and it is shown that the semiconductor-source/drain electrode interface contact resistance is nearly an order of magnitude lower for BGBC transistors versus BGTC devices. In Chapter 3, we report the implementation of amorphous indium yttrium oxide (a-IYO) as a TFT semiconductor for the first time. Amorphous and polycrystalline IYO films are grown via a low-temperature solution process utilizing exothermic "combustion" precursors. Precursor transformation and the IYO films are analyzed by DTA, TGA, XRD, AFM, XPS, and optical transmission, revealing efficient conversion to the metal-oxide lattice, and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit impressive electron mobilities of 7.3 cm2V-1s-1 (Tanneal = 300 °C) and 5.0 cm2V-1s -1 (Tanneal = 250 °C) for 2

  15. Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

    DOE PAGESBeta

    Ahn, S.; Dong, C.; Zhu, W.; Kim, B. -j.; Hwang, Ya-Hsi; Ren, F.; Pearton, S. J.; Yang, Gwangseok; Kim, J.; Patrick, Erin; et al

    2015-08-18

    The effects of proton irradiation energy on dc characteristics of AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOSHEMTs) using Al2O3 as the gate dielectric were studied. Al2O3/AlGaN/GaN MOSHEMTs were irradiated with a fixed proton dose of 5 × 1015 cm-2 at different energies of 5, 10, or 15 MeV. More degradation of the device dc characteristics was observed for lower irradiation energy due to the larger amount of nonionizing energy loss in the active region of the MOSHEMTs under these conditions. The reductions in saturation current were 95.3%, 68.3%, and 59.8% and reductions in maximum transconductance were 88%, 54.4%, andmore » 40.7% after 5, 10, and 15 MeV proton irradiation, respectively. Both forward and reverse gate leakage current were reduced more than one order of magnitude after irradiation. The carrier removal rates for the irradiation energies employed in this study were in the range of 127–289 cm-1. These are similar to the values reported for conventional metal-gate high-electron mobility transistors under the same conditions and show that the gate dielectric does not affect the response to proton irradiation for these energies.« less

  16. Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO2 films on silicon

    NASA Astrophysics Data System (ADS)

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Gao, Yuhan; Ma, Xiangyang; Yang, Deren

    2015-04-01

    We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared (NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO2 (CeO2:Er) films on silicon. The onset voltage of such EL under either forward or reverse bias is smaller than 10 V. Moreover, the EL quenching can be avoidable for the CeO2:Er-based MOS devices. Analysis on the current-voltage characteristic of the device indicates that the electron transportation at the EL-enabling voltages under either forward or reverse bias is dominated by trap-assisted tunneling mechanism. Namely, electrons in n+-Si/ITO can tunnel into the conduction band of CeO2 host via defect states at sufficiently high forward/reverse bias voltages. Then, a fraction of such electrons are accelerated by electric field to become hot electrons, which impact-excite the Er3+ ions, thus leading to characteristic emissions. It is believed that this work has laid the foundation for developing viable silicon-based emitters using CeO2:Er films.

  17. Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor

    NASA Astrophysics Data System (ADS)

    Chen, Hai-Feng; Guo, Li-Xin; Zheng, Pu-Yang; Dong, Zhao; Zhang, Qian

    2015-07-01

    Drain-modulated generation current IDMG induced by interface traps in an n-type metal-oxide-semiconductor field-effect transistor (nMOSFET) is investigated. The formation of IDMG ascribes to the change of the Si surface potential φ s. This change makes the channel suffer transformation from the inversion state, depletion I state to depletion II state. The simulation result agrees with the experiment in the inversion and depletion I states. In the depletion II state, the theoretical curve goes into saturation, while the experimental curve drops quickly as VD increases. The reason for this unconformity is that the drain-to-gate voltage VDG lessens φ s around the drain corner and controls the falling edge of the IDMG curve. The experiments of gate-modulated generation and recombination currents are also applied to verify the reasonability of the mechanism. Based on this mechanism, a theoretical model of the IDMG falling edge is set up in which IDMG has an exponential attenuation relation with VDG. Finally, the critical fitting coefficient t of the experimental curves is extracted. It is found that t = 80 mV = 3kT/q. This result fully shows the accuracy of the above mechanism. Project supported by the National Natural Science Foundation of China (Grant No. 61306131) and the Research Project of Education Department of Shaanxi Province, China (Grant No. 2013JK1095).

  18. On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Bisi, D.; Chan, S. H.; Liu, X.; Yeluri, R.; Keller, S.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Mishra, U. K.

    2016-03-01

    By means of combined current-voltage and capacitance-voltage sweep and transient measurements, we present the effects of forward-bias stress and charge trapping mechanisms at oxide traps in Al2O3/GaN metal-oxide-semiconductor capacitors grown in-situ by metalorganic chemical vapor deposition. Two main current-voltage regimes have been identified: a low-field regime characterized by low gate-current and low flat-band voltage instabilities, and a high-field regime triggered for oxide field greater than 3.3 MV/cm and characterized by the onset of parasitic leakage current and positive flat-band shift. In the low-voltage regime, gate current transients convey stress/relaxation kinetics based on a power-law, suggesting that tunneling trapping mechanisms occur at near-interface traps aligned with the GaN conduction-band minimum. In the high-voltage regime, devices experience parasitic conduction mechanisms and enhanced charge-trapping at oxide-traps revealed by very slow recovery transients.

  19. Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Si, Mengwei; Gu, Jiangjiang J.; Wang, Xinwei; Shao, Jiayi; Li, Xuefei; Manfra, Michael J.; Gordon, Roy G.; Ye, Peide D.

    2013-03-01

    InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) on the performance of these devices have been systematically studied. The 30 min 400 °C FGA (4% H2/96% N2) is found to improve the quality of the Al2O3/InGaAs interface, resulting in a subthreshold slope reduction over 20 mV/dec (from 117 mV/dec in average to 93 mV/dec). Moreover, the improvement of interface quality also has positive impact on the on-state device performance. A scaling metrics study has been carried out for FGA treated devices with channel lengths down to 20 nm, indicating excellent gate electrostatic control. With the FGA passivation and the ultra-thin nanowire structure, InGaAs MOSFETs are promising for future logic applications.

  20. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Lee, Minjoo L.; Fitzgerald, Eugene A.; Bulsara, Mayank T.; Currie, Matthew T.; Lochtefeld, Anthony

    2005-01-01

    This article reviews the history and current progress in high-mobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by providing a chronological overview of important milestones and discoveries that have allowed heterostructures grown on Si substrates to transition from purely academic research in the 1980's and 1990's to the commercial development that is taking place today. We next provide a topical review of the various types of strain-engineered MOSFETs that can be integrated onto relaxed Si1-xGex, including surface-channel strained Si n- and p-MOSFETs, as well as double-heterostructure MOSFETs which combine a strained Si surface channel with a Ge-rich buried channel. In all cases, we will focus on the connections between layer structure, band structure, and MOS mobility characteristics. Although the surface and starting substrate are composed of pure Si, the use of strained Si still creates new challenges, and we shall also review the literature on short-channel device performance and process integration of strained Si. The review concludes with a global summary of the mobility enhancements available in the SiGe materials system and a discussion of implications for future technology generations.

  1. Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation

    NASA Astrophysics Data System (ADS)

    Liang, Gengchiau; Neophytou, Neophytos; Lundstrom, Mark S.; Nikonov, Dmitri E.

    2007-09-01

    A real-space quantum transport simulator for graphene nanoribbon (GNR) metal-oxide-semiconductor field-effect transistors (MOSFETs) has been developed and used to examine the ballistic performance of GNR MOSFETs. This study focuses on the impact of quantum effects on these devices and on the effect of different type of contacts. We found that two-dimensional (2D) semi-infinite graphene contacts produce metal-induced-gap states (MIGS) in the GNR channel. These states enhance quantum tunneling, particularly in short channel devices, they cause Fermi level pinning and degrade the device performance in both the ON-state and OFF-state. Devices with infinitely long contacts having the same width as the channel do not indicate MIGS. Even without MIGS quantum tunneling effects such as band-to-band tunneling still play an important role in the device characteristics and dominate the OFF-state current. This is accurately captured in our nonequilibrium Greens' function quantum simulations. We show that both narrow (1.4 nm width) and wider (1.8 nm width) GNRs with 12.5 nm channel length have the potential to outperform ultrascaled Si devices in terms of drive current capabilities and electrostatic control. Although their subthreshold swings under forward bias are better than in Si transistors, tunneling currents are important and prevent the achievement of the theoretical limit of 60 mV/dec.

  2. A Customized Metal Oxide Semiconductor-Based Gas Sensor Array for Onion Quality Evaluation: System Development and Characterization

    PubMed Central

    Konduru, Tharun; Rains, Glen C.; Li, Changying

    2015-01-01

    A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS) sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone), acetonitrile (nitrile), ethyl acetate (ester), and ethanol (alcohol). The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm) of methlypropyl sulfide and two concentrations (145 and 1452 ppm) of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage. PMID:25587975

  3. Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Hu, Guang-Xi; Liu, Ran; Qiu, Zhi-Jun; Wang, Ling-Li; Tang, Ting-Ao

    2010-03-01

    A model for a metal-oxide-semiconductor field-effect transistor (MOSFET) with a double gate (DG) is developed. Quantum mechanical effects on the threshold voltage (VTH) are modeled and investigated analytically. The analytic model shows how VTH is increased with quantum mechanical effect. The model is applicable to both symmetric DG (SDG) and asymmetric DG (ADG) nMOSFETs, and is also applicable to both doped and undoped DG nMOSFETs. The analytic results are verified by comparing with the results obtained from simulations using Schred, and good agreement is observed. The VTH of an ADG nMOSFET will shift more than that of an SDG nMOSFET, and the VTH of a DG transistor with (110)-silicon (Si) orientation will shift more than that of a DG transistor with (100)-Si orientation. When the silicon thickness tsi < 3 nm, the VTH shift will be significant, and one should be careful in the use of an extremely thin silicon body. When the body doping density (NA) is not high (<1018 cm-3), the VTH shift is almost the same for different NA. When NA > 1018 cm-3, the higher the NA, the more the VTH shift.

  4. Capacitance-voltage characteristics of Si and Ge nanomembrane based flexible metal-oxide-semiconductor devices under bending conditions

    NASA Astrophysics Data System (ADS)

    Cho, Minkyu; Seo, Jung-Hun; Park, Dong-Wook; Zhou, Weidong; Ma, Zhenqiang

    2016-06-01

    Metal-oxide-semiconductor (MOS) device is the basic building block for field effect transistors (FET). The majority of thin-film transistors (TFTs) are FETs. When MOSFET are mechanically bent, the MOS structure will be inevitably subject to mechanical strain. In this paper, flexible MOS devices using single crystalline Silicon (Si) and Germanium (Ge) nanomembranes (NM) with SiO2, SiO, and Al2O3 dielectric layers are fabricated on a plastic substrate. The relationships between semiconductor nanomembranes and various oxide materials are carefully investigated under tensile/compressive strain. The flatband voltage, threshold voltage, and effective charge density in various MOS combinations revealed that Si NM-SiO2 configuration shows the best interface charge behavior, while Ge NM-Al2O3 shows the worst. This investigation of flexible MOS devices can help us understand the impact of charges in the active region of the flexible TFTs and capacitance changes under the tensile/compressive strains on the change in electrical characteristics in flexible NM based TFTs.

  5. High-frequency performances of superjunction laterally diffused metal-oxide-semiconductor transistors for RF power applications

    NASA Astrophysics Data System (ADS)

    Chen, Bo-Yuan; Chen, Kun-Ming; Chiu, Chia-Sung; Huang, Guo-Wei; Chang, Edward Yi

    2016-04-01

    This paper presents the dc and high-frequency performances of laterally diffused metal-oxide-semiconductor (LDMOS) transistors with superjunction (SJ) structures. The SJ-LDMOS transistors were fabricated using a 0.5-µm CMOS process. By utilizing a modified SJ/RESURF layout (Type I) or a tapered SJ layout (Type II) in our devices, better high-frequency performances and higher breakdown voltages are achieved compared with conventional SJ counterpart, owing to the suppression of the substrate-assisted depletion effect and the reduction of the drain resistance. For Type I device with an optimal SJ layout dimension, the cutoff frequency and the breakdown voltage are 3.7 GHz and 68 V, respectively. For Type II device with a smallest p-pillar width near the drain, they can be enhanced further and reach to 4.9 GHz and 83 V. These experimental results suggest that the SJ-LDMOS can be used in the RF power amplifiers.

  6. A customized metal oxide semiconductor-based gas sensor array for onion quality evaluation: system development and characterization.

    PubMed

    Konduru, Tharun; Rains, Glen C; Li, Changying

    2015-01-01

    A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS) sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone), acetonitrile (nitrile), ethyl acetate (ester), and ethanol (alcohol). The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm) of methlypropyl sulfide and two concentrations (145 and 1452 ppm) of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage. PMID:25587975

  7. Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO{sub 2} films on silicon

    SciTech Connect

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Gao, Yuhan; Ma, Xiangyang Yang, Deren

    2015-04-06

    We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared (NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO{sub 2} (CeO{sub 2}:Er) films on silicon. The onset voltage of such EL under either forward or reverse bias is smaller than 10 V. Moreover, the EL quenching can be avoidable for the CeO{sub 2}:Er-based MOS devices. Analysis on the current-voltage characteristic of the device indicates that the electron transportation at the EL-enabling voltages under either forward or reverse bias is dominated by trap-assisted tunneling mechanism. Namely, electrons in n{sup +}-Si/ITO can tunnel into the conduction band of CeO{sub 2} host via defect states at sufficiently high forward/reverse bias voltages. Then, a fraction of such electrons are accelerated by electric field to become hot electrons, which impact-excite the Er{sup 3+} ions, thus leading to characteristic emissions. It is believed that this work has laid the foundation for developing viable silicon-based emitters using CeO{sub 2}:Er films.

  8. Theoretical Study of Triboelectric-Potential Gated/Driven Metal-Oxide-Semiconductor Field-Effect Transistor.

    PubMed

    Peng, Wenbo; Yu, Ruomeng; He, Yongning; Wang, Zhong Lin

    2016-04-26

    Triboelectric nanogenerator has drawn considerable attentions as a potential candidate for harvesting mechanical energies in our daily life. By utilizing the triboelectric potential generated through the coupling of contact electrification and electrostatic induction, the "tribotronics" has been introduced to tune/control the charge carrier transport behavior of silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET). Here, we perform a theoretical study of the performances of tribotronic MOSFET gated by triboelectric potential in two working modes through finite element analysis. The drain-source current dependence on contact-electrification generated triboelectric charges, gap separation distance, and externally applied bias are investigated. The in-depth physical mechanism of the tribotronic MOSFET operations is thoroughly illustrated by calculating and analyzing the charge transfer process, voltage relationship to gap separation distance, and electric potential distribution. Moreover, a tribotronic MOSFET working concept is proposed, simulated and studied for performing self-powered FET and logic operations. This work provides a deep understanding of working mechanisms and design guidance of tribotronic MOSFET for potential applications in micro/nanoelectromechanical systems (MEMS/NEMS), human-machine interface, flexible electronics, and self-powered active sensors. PMID:27077327

  9. A theoretical and experimental evaluation of surface roughness variation in trigate metal oxide semiconductor field effect transistors

    NASA Astrophysics Data System (ADS)

    Hsieh, E. R.; Chung, Steve S.

    2016-05-01

    A gate current variation measurement method is proposed to examine the surface roughness of metal oxide semiconductor field effect transistors (MOSFETs). This gate current variation is demonstrated on the trigate structure MOSFETs. It was found that the standard deviation of oxide-thickness is proportional to the inverse of square-root of device areas, and its slope is defined as the effective surface roughness variation. In particular, for the transistors with varying fin height, this surface roughness effect aggravates with the increasing fin height. More importantly, the gate leakage at off-state, i.e., Vg = 0 V, is strongly dependent on the gate dielectric surface roughness and dominates the drain current variations. This gate leakage may serve as a quality measure of a low power and energy efficient integrated circuit, especially for the transistor with 3-dimensional gate structure. The present results provide us better understandings on an additional source of Vth fluctuations, i.e., the surface roughness variation, in addition to the random dopant fluctuation, that we are usually not noticed. In particular, this study also provides us a simple easy-to-use method for the monitoring of oxide quality in the volume production of trigate MOSFETs.

  10. Functional integrity of flexible n-channel metal-oxide-semiconductor field-effect transistors on a reversibly bistable platform

    NASA Astrophysics Data System (ADS)

    Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Rojas, Jhonathan P.; Aljedaani, Abdulrahman B.; Hussain, Muhammad M.

    2015-10-01

    Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal-oxide-semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.

  11. Possible unified model for the Hooge parameter in inversion-layer-channel metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Omura, Yasuhisa

    2013-06-01

    This paper proposes a possible unified model for the Hooge parameter by considering the impact of transport dimensionality on the Hooge parameter behavior of various inversion-layer-channel metal-oxide-semiconductor field-effect transistors. Past experiments show that the Hooge parameter has a couple of peculiar behaviors. Based on a phenomenological consideration, the original mobility-based model for the Hooge parameter is shown to provide only a partial understanding of the results. It is also observed that, in contrast to past models, the interpretation of some aspects of the Hooge parameter strongly depends on how the two fluctuation modes, the carrier-density fluctuation and the mobility fluctuation, correlate. The phenomenological model proposed here gives a fundamental physical basis that allows important aspects of the Hooge parameter to be interpreted; the model also introduces three basic parameters (the Hooge parameter elements for the carrier-density fluctuation, the mobility fluctuation, and the cross-correlation component). Theoretical expressions for the three basic Hooge parameters are given by merging the fundamental Hooge model, Handel's theory, statistical physics, and quantum-mechanical transport physics. The gate voltage dependence of the Hooge parameter can be explained reasonably well by stating that the screening length rules the dielectric function and that the mobility fluctuation and carrier density fluctuation are correlated. Finally, the theoretical models are examined against the results of past experiments.

  12. Analytic Circuit Model of Ballistic Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor for Transient Analysis

    NASA Astrophysics Data System (ADS)

    Numata, Tatsuhiro; Uno, Shigeyasu; Kamakura, Yoshinari; Mori, Nobuya; Nakazato, Kazuo

    2013-04-01

    A fully analytic and explicit model of device properties in the ballistic transport in gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed, which enables circuit simulations. The electrostatic potential distribution in the wire cross section is approximated by a parabolic function. Using the applied potential, the energy levels of electrons are analytically obtained in terms of a single unknown parameter by perturbation theory. Ballistic current is obtained in terms of an unknown parameter using the analytic expression of the electron energy level and the current equation for ballistic transport. We analytically derive the parameter with a one-of-a-kind approximate methodology. With the obtained parameter, the fully analytic and explicit model of device properties such as energy levels, ballistic current, and effective capacitance is derived with satisfactory accuracy compared with the numerical simulation results. Finally, we perform a transient simulation using a circuit simulator, introducing our model to it as a Verilog-A script.

  13. A silicon metal-oxide-semiconductor field-effect transistor Hall bar for scanning Hall probe microscopy.

    PubMed

    Yamaguchi, Akinobu; Saito, Hiromasa; Shimizu, Masayoshi; Miyajima, Hideki; Matsumoto, Satoru; Nakamura, Yoshiharu; Hirohata, Atsufumi

    2008-08-01

    We demonstrate successful operation of a scanning Hall probe microscope with a few micron-size resolution by using a silicon metal-oxide semiconductor field-effect transistor (Si-MOSFET) Hall bar, which is designed to improve not only the mechanical strength but also the temperature stability. The Si-MOSFET micro-Hall probe is cheaper than the current micro-Hall probes and is found to be as sensitive as a micro-Hall probe with GaAs/AlGaAs heterostructure or an epitaxial InSb two-dimensional electron gas. This was used to magnetically image the surface of a Sm(2)Co(17) permanent magnet during the magnetization reversal process as a function of an external magnetic field below 1.5 T. This revealed firm evidence of the presence of the inverse magnetic seed as theoretically predicted earlier. Magnetically pinned centers, with a typical size 80 mum, are observed to persist even under a high magnetic field, clearly indicating the robustness of the Si Hall probe against the field application as well as the repetition of the measurement. PMID:19044353

  14. Nonvolatile and tunable switching of lateral photo-voltage triggered by laser and electric pulse in metal dusted metal-oxide-semiconductor structures.

    PubMed

    Zhou, Peiqi; Gan, Zhikai; Huang, Xu; Mei, Chunlian; Huang, Meizhen; Xia, Yuxing; Wang, Hui

    2016-01-01

    Owing to the innate stabilization of built-in potential in p-n junction or metal-oxide-semiconductor structure, the sensitivity and linearity of most lateral photovoltaic effect (LPE) devices is always fixed after fabrication. Here we report a nonvolatile and tunable switching effect of lateral photo-voltage (LPV) in Cu dusted ultrathin metal-oxide-semiconductor structure. With the stimulation of electric pulse and local illumination, the sensitivity and linearity of LPV can be adjusted up and down in a nonvolatile manner. This phenomenon is attributed to a controllable change of the Schottky barrier formed between the metal layer and silicon substrate, including the consequent change of film resistivity. This work may widely improve the performance of existing LPE-based devices and suggest new applications for LPE in other areas. PMID:27535351

  15. Nonvolatile and tunable switching of lateral photo-voltage triggered by laser and electric pulse in metal dusted metal-oxide-semiconductor structures

    PubMed Central

    Zhou, Peiqi; Gan, Zhikai; Huang, Xu; Mei, Chunlian; Huang, Meizhen; Xia, Yuxing; Wang, Hui

    2016-01-01

    Owing to the innate stabilization of built-in potential in p–n junction or metal-oxide-semiconductor structure, the sensitivity and linearity of most lateral photovoltaic effect (LPE) devices is always fixed after fabrication. Here we report a nonvolatile and tunable switching effect of lateral photo-voltage (LPV) in Cu dusted ultrathin metal-oxide-semiconductor structure. With the stimulation of electric pulse and local illumination, the sensitivity and linearity of LPV can be adjusted up and down in a nonvolatile manner. This phenomenon is attributed to a controllable change of the Schottky barrier formed between the metal layer and silicon substrate, including the consequent change of film resistivity. This work may widely improve the performance of existing LPE-based devices and suggest new applications for LPE in other areas. PMID:27535351

  16. Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Amakawa, Shuhei; Toda, Asato; Ohyama, Katsuroh; Higashiguchi, Naoya; Hori, Daisuke; Shintaku, Yasuhiro; Miyake, Masataka; Miura-Mattausch, Mitiko

    2011-04-01

    This paper presents an experimentally found device-size-independent universal relationship between the settling time of floating-body silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) and the substrate current in body-tied devices. Such a relationship could enable one to characterize dynamic properties of SOI MOSFETs through DC measurements and would be useful for physical compact modeling of history effects.

  17. Real-time, continuous, fluorescence sensing in a freely-moving subject with an implanted hybrid VCSEL/CMOS biosensor

    PubMed Central

    O’Sullivan, Thomas D.; Heitz, Roxana T.; Parashurama, Natesh; Barkin, David B.; Wooley, Bruce A.; Gambhir, Sanjiv S.; Harris, James S.; Levi, Ofer

    2013-01-01

    Performance improvements in instrumentation for optical imaging have contributed greatly to molecular imaging in living subjects. In order to advance molecular imaging in freely moving, untethered subjects, we designed a miniature vertical-cavity surface-emitting laser (VCSEL)-based biosensor measuring 1cm3 and weighing 0.7g that accurately detects both fluorophore and tumor-targeted molecular probes in small animals. We integrated a critical enabling component, a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit, which digitized the fluorescence signal to achieve autofluorescence-limited sensitivity. After surgical implantation of the lightweight sensor for two weeks, we obtained continuous and dynamic fluorophore measurements while the subject was un-anesthetized and mobile. The technology demonstrated here represents a critical step in the path toward untethered optical sensing using an integrated optoelectronic implant. PMID:24009996

  18. Real-time, continuous, fluorescence sensing in a freely-moving subject with an implanted hybrid VCSEL/CMOS biosensor.

    PubMed

    O'Sullivan, Thomas D; Heitz, Roxana T; Parashurama, Natesh; Barkin, David B; Wooley, Bruce A; Gambhir, Sanjiv S; Harris, James S; Levi, Ofer

    2013-01-01

    Performance improvements in instrumentation for optical imaging have contributed greatly to molecular imaging in living subjects. In order to advance molecular imaging in freely moving, untethered subjects, we designed a miniature vertical-cavity surface-emitting laser (VCSEL)-based biosensor measuring 1cm(3) and weighing 0.7g that accurately detects both fluorophore and tumor-targeted molecular probes in small animals. We integrated a critical enabling component, a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit, which digitized the fluorescence signal to achieve autofluorescence-limited sensitivity. After surgical implantation of the lightweight sensor for two weeks, we obtained continuous and dynamic fluorophore measurements while the subject was un-anesthetized and mobile. The technology demonstrated here represents a critical step in the path toward untethered optical sensing using an integrated optoelectronic implant. PMID:24009996

  19. Metal-oxide-semiconductor diodes containing C60 fullerenes for non-volatile memory applications

    NASA Astrophysics Data System (ADS)

    Beckmeier, Daniel; Baumgärtner, Hermann

    2013-01-01

    For non-volatile memories, silicon-oxide-nitride-oxide-silicon or floating gate structures are used to store information by charging and discharging electronic states reversibly. In this article, we propose to replace the floating gate by C60 molecules. This would allow more defined programming voltages because of the discrete molecular energy levels and a higher resistance to tunneling oxide defects because of the weak electrical connection between the single molecules. Such C60 MOS diode structures are produced and their electrical properties are analyzed regarding current transport and charging mechanism of the molecules. To create the MOS structures, C60 molecules (5% of a monolayer) are evaporated onto a part of a clean silicon wafer and covered by amorphous silicon in situ in an ultra high vacuum system. Then the wafer is oxidized in wet atmosphere at just 710 °C through the C60 layer. The goal is to produce a clean oxide above and under the molecules without destroying them. Aluminum gate contacts are defined on top of these layers to perform complementary capacitance voltage (CV) and current voltage (IV) measurements. First, the gate voltage is swept to analyze the injection current, then CV measurements are performed after each sweep to analyze the charge state of the C60 layer and the oxide quality. Reference diodes without C60 on the same wafer show an identical Fowler-Nordheim (FN) tunneling behavior for currents injected from silicon or from aluminum, respectively. In the CV curves, no pronounced flatband voltage shift is observable. In diodes with C60, for negative gate voltages, a classical FN tunneling is observed and compared to theory. The electron injection from silicon shows a different tunneling current behavior. It starts at a lower electric field and has a smaller slope then a FN current would have. It is identified as a trap-assisted tunneling (TAT) current caused by oxidation-induced traps under the C60 layer. It is modeled by an

  20. Verification of the plan dosimetry for high dose rate brachytherapy using metal-oxide-semiconductor field effect transistor detectors

    SciTech Connect

    Qi Zhenyu; Deng Xiaowu; Huang Shaomin; Lu Jie; Lerch, Michael; Cutajar, Dean; Rosenfeld, Anatoly

    2007-06-15

    The feasibility of a recently designed metal-oxide-semiconductor field effect transistor (MOSFET) dosimetry system for dose verification of high dose rate (HDR) brachytherapy treatment planning was investigated. MOSFET detectors were calibrated with a 0.6 cm{sup 3} NE-2571 Farmer-type ionization chamber in water. Key characteristics of the MOSFET detectors, such as the energy dependence, that will affect phantom measurements with HDR {sup 192}Ir sources were measured. The MOSFET detector was then applied to verify the dosimetric accuracy of HDR brachytherapy treatments in a custom-made water phantom. Three MOSFET detectors were calibrated independently, with the calibration factors ranging from 0.187 to 0.215 cGy/mV. A distance dependent energy response was observed, significant within 2 cm from the source. The new MOSFET detector has a good reproducibility (<3%), small angular effect (<2%), and good dose linearity (R{sup 2}=1). It was observed that the MOSFET detectors had a linear response to dose until the threshold voltage reached approximately 24 V for {sup 192}Ir source measurements. Further comparison of phantom measurements using MOSFET detectors with dose calculations by a commercial treatment planning system for computed tomography-based brachytherapy treatment plans showed that the mean relative deviation was 2.2{+-}0.2% for dose points 1 cm away from the source and 2.0{+-}0.1% for dose points located 2 cm away. The percentage deviations between the measured doses and the planned doses were below 5% for all the measurements. The MOSFET detector, with its advantages of small physical size and ease of use, is a reliable tool for quality assurance of HDR brachytherapy. The phantom verification method described here is universal and can be applied to other HDR brachytherapy treatments.

  1. High-Resolution p-Type Metal Oxide Semiconductor Nanowire Array as an Ultrasensitive Sensor for Volatile Organic Compounds.

    PubMed

    Cho, Soo-Yeon; Yoo, Hae-Wook; Kim, Ju Ye; Jung, Woo-Bin; Jin, Ming Liang; Kim, Jong-Seon; Jeon, Hwan-Jin; Jung, Hee-Tae

    2016-07-13

    The development of high-performance volatile organic compound (VOC) sensor based on a p-type metal oxide semiconductor (MOS) is one of the important topics in gas sensor research because of its unique sensing characteristics, namely, rapid recovery kinetics, low temperature dependence, high humidity or thermal stability, and high potential for p-n junction applications. Despite intensive efforts made in this area, the applications of such sensors are hindered because of drawbacks related to the low sensitivity and slow response or long recovery time of p-type MOSs. In this study, the VOC sensing performance of a p-type MOS was significantly enhanced by forming a patterned p-type polycrystalline MOS with an ultrathin, high-aspect-ratio (∼25) structure (∼14 nm thickness) composed of ultrasmall grains (∼5 nm size). A high-resolution polycrystalline p-type MOS nanowire array with a grain size of ∼5 nm was fabricated by secondary sputtering via Ar(+) bombardment. Various p-type nanowire arrays of CuO, NiO, and Cr2O3 were easily fabricated by simply changing the sputtering material. The VOC sensor thus fabricated exhibited higher sensitivity (ΔR/Ra = 30 at 1 ppm hexane using NiO channels), as well as faster response or shorter recovery time (∼30 s) than that of previously reported p-type MOS sensors. This result is attributed to the high resolution and small grain size of p-type MOSs, which lead to overlap of fully charged zones; as a result, electrical properties are predominantly determined by surface states. Our new approach may be used as a route for producing high-resolution MOSs with particle sizes of ∼5 nm within a highly ordered, tall nanowire array structure. PMID:27304752

  2. Design of nanophotonic, hot-electron solar-blind ultraviolet detectors with a metal-oxide-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Wang, Zhiyuan; Wang, Xiaoxin; Liu, Jifeng

    2014-12-01

    Solar-blind ultraviolet (UV) detection refers to photon detection specifically in the wavelength range of 200 nm-320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. The most commonly used solid state devices for this application are wide band gap (WBG) semiconductor photodetectors (Eg > 3.5 eV). However, WBG semiconductors are difficult to grow and integrate with Si readout integrated circuits (ROICs). In this paper, we design a nanophotonic metal-oxide-semiconductor structure on Si for solar-blind UV detectors. Instead of using semiconductors as the active absorber, we use Sn nano-grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO2 interfacial barrier, thereby generating photocurrent between the metal and the n-type Si region upon UV excitation. Moreover, the transported hot electron has an excess kinetic energy >3 eV, large enough to induce impact ionization and generate another free electron in the conduction band of n-Si. This process doubles the quantum efficiency. On the other hand, the large metal/oxide interfacial energy barrier (>3.5 eV) also enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, ˜75% UV absorption and hot electron excitation can be achieved within the mean free path of ˜20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. The simple geometry of the Sn nano-gratings and the MOS structure make it easy to fabricate and integrate with Si ROICs compared to existing solar-blind UV detection schemes. The presented device structure also breaks through the conventional notion that photon absorption by metal is always a loss in solid-state photodetectors, and it can potentially be extended to other active metal photonic devices.

  3. Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz

    SciTech Connect

    Kasper, M.; Gramse, G.; Hoffmann, J.; Gaquiere, C.; Feger, R.; Stelzer, A.; Smoliner, J.; Kienberger, F.

    2014-11-14

    We measured the DC and RF impedance characteristics of micrometric metal-oxide-semiconductor (MOS) capacitors and Schottky diodes using scanning microwave microscopy (SMM). The SMM consisting of an atomic force microscopy (AFM) interfaced with a vector network analyser (VNA) was used to measure the reflection S11 coefficient of the metallic MOS and Schottky contact pads at 18 GHz as a function of the tip bias voltage. By controlling the SMM biasing conditions, the AFM tip was used to bias the Schottky contacts between reverse and forward mode. In reverse bias direction, the Schottky contacts showed mostly a change in the imaginary part of the admittance while in forward bias direction the change was mostly in the real part of the admittance. Reference MOS capacitors which are next to the Schottky diodes on the same sample were used to calibrate the SMM S11 data and convert it into capacitance values. Calibrated capacitance between 1–10 fF and 1/C{sup 2} spectroscopy curves were acquired on the different Schottky diodes as a function of the DC bias voltage following a linear behavior. Additionally, measurements were done directly with the AFM-tip in contact with the silicon substrate forming a nanoscale Schottky contact. Similar capacitance-voltage curves were obtained but with smaller values (30–300 aF) due to the corresponding smaller AFM-tip diameter. Calibrated capacitance images of both the MOS and Schottky contacts were acquired with nanoscale resolution at different tip-bias voltages.

  4. P-Channel Lateral Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor with Split N-Type Buried Layer for High Breakdown Voltage and Low Specific On-Resistance

    NASA Astrophysics Data System (ADS)

    Liaw, Chorng-Wei; Chang, Ching-Hung; Lin, Ming-Jang; King, Ya-Ching; Hsu, Charles Ching-Hsiang; Lin, Chrong Jung

    2007-07-01

    Many high voltage complementary metal-oxide-semiconductor (HV-CMOS) processes are modified from a standard 5 V CMOS process by adding an N-type heavily doped layer under the P-well of a HV-PMOS drain terminal to isolate a high voltage P-well from a grounded P-substrate. The limitation of breakdown voltage is dominated by P-well concentration and junction depth. For designing a certain breakdown voltage (\\mathit{BV}dss) for a HV-PMOS, the original 5 V CMOS P-well concentration should be decreased, which could degrade 5 V CMOS characteristics, such as NMOS punch through and latch-up immunity. In this study, we demonstrate a novel HV-PMOS based on a split N-type buried layer (NBL), which provides a high \\mathit{BV}dss in a HV-CMOS process. The newly proposed device with NBL split under the P-well of a drain electrode increases \\mathit{BV}dss without degrading specific on-resistance (Ron,sp) and any added process complexity. From this result, P-well concentration could be increased to improve both 5 V NMOS characteristics and HV-PMOS Ron,sp.

  5. Detailed investigation of InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photo-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Liu, Biing-Der; Lee, Si-Chen; Sun, Tai-Ping; Yang, Sheng-Jenn

    1995-05-01

    The InSb metal-oxide-semiconductor field effect transistor (MOSFET) with three different channel lengths 5, 15, and 30 micron were fabricated successfully. The SiO2 prepared by photo-enhanced chemical vapor deposition was used both as the gate insulator and the source/drain passivation layer to reduce the source/drain pn junction surface leakage current. The common-source current-voltage characteristics show a breakdown voltage exceeding 2 V indicating an excellent pn junction reverse characteristics. The capacitance-voltage and the transferred current versus gate voltage characteristics are discussed in detail to explain the geometry effect on the device performance.

  6. On the mobility of n-channel metal-oxide-semiconductor transistors prepared by low-pressure rapid thermal chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    McLarty, P. K.; Misra, V.; Hill, W.; Wortman, J. J.; Hauser, J. R.; Morfouli, P.; Ouisse, T.

    1995-01-01

    The factors affecting the channel mobility of metal-oxide-semiconductor transistors fabricated using as-deposited rapid thermal chemical vapor deposition (RTCVD) of silicon dioxide are investigated and compared to thermal silicon dioxide at various temperatures. The results indicate that the observed differences in the mobility values of thermal and rapid thermal chemical vapor deposed oxides at channel concentrations where Coulombic scattering is important is due to increased oxide trapping in the RTCVD films. It was also observed that the rapid thermal chemical vapor deposited oxides exhibited slightly larger mobility degradation rates at high fields when compared to thermal oxides.

  7. A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation

    NASA Astrophysics Data System (ADS)

    Wang, Sihao; Pei, Yunpeng; Huang, Ru; Wang, Wenhua; Liu, Wen; Xue, Shoubin; An, Xia; Tian, Jingquan; Wang, Yangyuan

    2010-01-01

    A radiation-induced leakage current model in deep submicron bulk silicon N-channel metal-oxide-semiconductor field effect transistor (NMOSFET) is proposed in this paper for circuit simulations. The model takes into account the impact of the substrate doping concentration, the angle of shallow trench isolation (STI) region, and the junction depth of source/drain, which can predict the off-state leakage current of the NMOSFET with STI region irradiated at different radiation doses. The model is verified by comparing with the experimental results. The model can be easily implemented into the circuit simulator to evaluate the impact of total ionizing dose effect on the performance of circuit.

  8. Measurement of conduction band deformation potential constants using gate direct tunneling current in n-type metal oxide semiconductor field effect transistors under mechanical stress

    NASA Astrophysics Data System (ADS)

    Lim, Ji-Song; Yang, Xiaodong; Nishida, Toshikazu; Thompson, Scott E.

    2006-08-01

    An experimental method to determine both the hydrostatic and shear deformation potential constants is introduced. The technique is based on the change in the gate tunneling currents of Si-metal oxide semiconductor field effect transistors (MOSFETs) under externally applied mechanical stress and has been applied to industrial n-type MOSFETs. The conduction band hydrostatic and shear deformation potential constants (Ξd and Ξu) are extracted to be 1.0±0.1 and 9.6±1.0eV, respectively, which is consistent with recent theoretical works.

  9. Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

    SciTech Connect

    Liu, Siyang; Zhang, Chunwei; Sun, Weifeng; Su, Wei; Wang, Shaorong; Ma, Shulang; Huang, Yu

    2014-04-14

    Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic.

  10. Determination of Fowler-Nordheim tunneling parameters in Metal-Oxide-Semiconductor structure including oxide field correction using a vertical optimization method

    NASA Astrophysics Data System (ADS)

    Toumi, S.; Ouennoughi, Z.; Strenger, K. C.; Frey, L.

    2016-08-01

    Current conduction mechanisms through a Metal-Oxide-Semiconductor structure are characterized via Fowler-Nordheim (FN) plots. The extraction of the FN parameters like the electron/hole effective mass in oxide mox and in semiconductor msc, the barrier height at the semiconductor-oxide interface ϕB, and the correction oxide voltage Vcorr for a MOS structure is made using a vertical optimization process on the current density without any assumption about ϕB or mox. An excellent agreement is obtained between the FN plots calculated with the FN parameters extracted using a vertical optimization process with the experimental one.

  11. Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method.

    PubMed

    Yoshikawa, Masanobu; Kosaka, Kenichi; Seki, Hirohumi; Kimoto, Tsunenobu

    2016-07-01

    We measured the depolarized and polarized Raman spectra of a 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) and found that compressive stress of approximately 20 MPa occurs under the source and gate electrodes and tensile stress of approximately 10 MPa occurs between the source and gate electrodes. The experimental result was in close agreement with the result obtained by calculation using the finite element method (FEM). A combination of Raman spectroscopy and FEM provides much data on the stresses in 4H-SiC MOSFET. PMID:27165155

  12. Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors

    NASA Astrophysics Data System (ADS)

    Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.

    2014-02-01

    We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX2 MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX2 MOSFETs.

  13. ADMET biosensors: up-to-date issues and strategies.

    PubMed

    Fang, Yan; Offenhaeusser, Andrease

    2004-12-01

    This insight review introduces the new concepts, theories, technology, instruments, frontier issues, and key strategies of ADMET (absorption, distribution, metabolism, elimination, and toxicity) biosensors, from the fermi to the quantum levels. Information about ADMET, originating from one author's invention, a patented pharmacotherapy for rescuing cardio-cerebral vascular stunning and regulating vascular endothelial growth-factor signaling at the post-genomic level, can be detected by a new generation of ADMET biosensor. This is a single-cell/single-molecule field-effect transistor (FET) hybrid system, where single molecules or single cells are assembled at the FET surface in a high density array manner via complementary metal-oxide-semiconductor (CMOS)-compatible technologies. Within a given nanometer distance, ADMET-mediated oxidation-reduction (redox) potentials, electrochemistry responses, and electron transfer processes can be simultaneously and directly probed by the gates of field-effect transistor arrays. The nanometer details of the functional coupling principles and characterization technologies of DNA single-molecule/single-cell FETs, as well as the design of lab-on-a-chip instruments, are indicated. Four frontier issues and key strategies are elucidated in detail. This can lead to innovative technology for high-throughout screening of labs-on-chips to resolve the pharmaceutical industry's current bottleneck via novel, FET-based drug discovery and single-molecule/single-cell screening methods, which can bring about a pharmaceutical industry revolution in the 21st century. PMID:15567991

  14. Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device

    NASA Astrophysics Data System (ADS)

    Koh, Donghyi; Shin, Seung Heon; Ahn, Jaehyun; Sonde, Sushant; Kwon, Hyuk-Min; Orzali, Tommaso; Kim, Dae-Hyun; Kim, Tae-Woo; Banerjee, Sanjay K.

    2015-11-01

    In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In0.53Ga0.47As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In0.53Ga0.47As. The XPS spectra of Ar treated In0.53Ga0.47As show a decrease in the AsOx and GaOx signal intensities, and the MOSCAPs show higher accumulation capacitance (Cacc), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (Dit), which thereby led to a reduction in the threshold voltage (Vth) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.

  15. CMOS-compatible, label-free silicon-nanowire biosensors to detect cardiac troponin I for acute myocardial infarction diagnosis.

    PubMed

    Kong, Tao; Su, Ruigong; Zhang, Beibei; Zhang, Qi; Cheng, Guosheng

    2012-04-15

    A label-free biosensor for electrical detection of cardiac troponin I (cTnI), a highly sensitive and selective biomarker of acute myocardial infarction (AMI), is demonstrated using silicon nanowire (SiNW) based field-effect transistors (FETs). The FET devices were fabricated by a complementary metal oxide semiconductor (CMOS) compatible top-down approach to define the SiNW followed by tetramethylammonium hydroxide (TMAH) wet etching. Electrical characterizations of the SiNW FET revealed an ambipolar conduction characteristic with an on/off ratio of 10(5)-10(6). CTnI monoclonal antibodies were then covalently immobilized on the SiNW surfaces. By integrating with a homemade biosensor measurement system, the biosensor exhibited rapid and sensitive response to cTnI proteins. The current response showed a nature of logarithm relationship against the cTnI concentration from 46 ng/mL down to 0.092 ng/mL. Moreover, an anti-interference capability of the fabricated biosensor was also assessed. By utilizing the top-down fabrication method, this work provides an efficient way for the cTnI proteins detection with an enormous potential of mass-production, which definitely facilitate the practical applications. PMID:22386490

  16. An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors

    NASA Astrophysics Data System (ADS)

    Cochrane, C. J.; Lenahan, P. M.; Lelis, A. J.

    2011-01-01

    In this study, we utilize electrically detected magnetic resonance (EDMR) techniques and electrical measurements to study defects in SiC based metal oxide semiconductor field effect transistors (MOSFETs). We compare results on a series of SiC MOSFETs prepared with significantly different processing parameters. The EDMR is detected through spin dependent recombination (SDR) in most cases. However, in some devices at a fairly high negative bias, the EDMR likely also involves spin dependent trap-assisted tunneling (SDT) between defects on both sides of the SiC/SiO2 interface. At least three different defects have been detected in the magnetic resonance measurements. The defects observed include two at the SiC/SiO2 interface or on the SiC side of the SiC/SiO2 interface: one is very likely a vacancy center with a distribution which extends into the bulk of the SiC and the other is likely a "dangling bond" defect. A third defect, located on the SiO2 side of the SiC/SiO2 interface, has a spectrum very similar to that previously reported for an oxygen deficient silicon coupled to a hydrogen atom. In nearly all cases, we observe a strong dominating single line EDMR spectrum with an isotropic g≈2.0027. In some samples, this strong central line is accompanied by two pairs of considerably weaker side peaks which we link to hyperfine interactions with nearby Si and C atoms. The pattern is physically reasonable for a silicon vacancy in SiC. We therefore tentatively assign it to a silicon vacancy or silicon vacancy associated defect in the SiC. In one set of devices with very high interface trap density we observe another dominating spectrum with g∥=2.0026 and g⊥=2.0010 with the symmetry axis coincident with the [0001] and nearly the SiC/SiO2 interface normal. We ascribe this EDMR spectrum to a "dangling bond" defect. A third EDMR spectrum shows up in some devices at a fairly large negative gate bias. The phase of this spectrum is quite consistently opposite to that of the

  17. Room temperature observation of size dependent single electron tunneling in a sub-2 nm size tunable Pt nanoparticle embedded metal-oxide-semiconductor structure.

    PubMed

    Yun, Minseong; Ramalingam, Balavinayagam; Gangopadhyay, Shubhra

    2011-11-18

    In this paper we report size dependent single electron tunneling behavior at room temperature in a metal-oxide-semiconductor structure with uniformly sized Pt nanoparticles embedded in an Al(2)O(3) dielectric. The sub-2 nm size Pt nanoparticles sandwiched between the Al(2)O(3) layers are deposited by a unique tilted target sputter deposition technique which produces metal nanoparticles as small as 0.5 nm with narrow size distributions at room temperature. The charging behavior of these nanoparticles shows clear single electron tunneling peaks due to the Coulomb blockade effect. Moreover, the average single electron addition energy and height of the single electron tunneling current strongly depend on the size of the Pt nanoparticle. These controllable single electron tunneling behaviors suggest a new route for fabrication of single electron devices. PMID:22024690

  18. Gate voltage dependent 1/f noise variance model based on physical noise generation mechanisms in n-channel metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Arai, Yukiko; Aoki, Hitoshi; Abe, Fumitaka; Todoroki, Shunichiro; Khatami, Ramin; Kazumi, Masaki; Totsuka, Takuya; Wang, Taifeng; Kobayashi, Haruo

    2015-04-01

    1/f noise is one of the most important characteristics for designing analog/RF circuits including operational amplifiers and oscillators. We have analyzed and developed a novel 1/f noise model in the strong inversion, saturation, and sub-threshold regions based on SPICE2 type model used in any public metal-oxide-semiconductor field-effect transistor (MOSFET) models developed by the University of California, Berkeley. Our model contains two noise generation mechanisms that are mobility and interface trap number fluctuations. Noise variability dependent on gate voltage is also newly implemented in our model. The proposed model has been implemented in BSIM4 model of a SPICE3 compatible circuit simulator. Parameters of the proposed model are extracted with 1/f noise measurements for simulation verifications. The simulation results show excellent agreements between measurement and simulations.

  19. A new third-level charge pumping method for accurate determination of interface-trap parameters in metal-oxide-semiconductor field-effect-transistors

    NASA Astrophysics Data System (ADS)

    Autran, Jean-Luc; Balland, Bernard

    1994-06-01

    We propose a new implementation of the third-level charge pumping technique for a precise determination of the energy distributions of electron and hole cross sections and interface state density in metal-oxide-semiconductor field-effect transistors (MOSFETs). Using an arbitrary function generator with a high clock rate and a sufficient storage memory length, it is possible to evaluate interface trap emission times and interface state densities in small geometry MOSFETs with a high-enegy resolution. The accuracy of the technique has been greatly increased owing to the high stability and the weak distortion of the signal applied to the gate of the device (numerically generating via a high-speed digital-to-analog converter) and the development of a new acquisition procedure. To illustrate the performance of this method, we present the first results concerning the characterization of 0.6 μm N-channel MOSFETs.

  20. Magnetoresistance of a Spin Metal-Oxide-Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts

    NASA Astrophysics Data System (ADS)

    Nakane, Ryosho; Harada, Tomoyuki; Sugiura, Kuniaki; Tanaka, Masaaki

    2010-11-01

    Transport characteristics were investigated in a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. A bottom-gate type spin MOSFET was fabricated by photolithography using an epitaxial MnAs film grown on a silicon-on-insulator (SOI) substrate. In-plane magnetoresistance showed a square like hysteretic behavior, when measurements were performed with constant source-drain and source-gate biases. From the comparison with the magnetization-related resistance change resulting from the MnAs contacts, a highly possible origin of the feature obtained for the spin MOSFET is the spin-valve effect originating from the spin-dependent transport in the Si channel.

  1. Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

    SciTech Connect

    Djara, V.; Cherkaoui, K.; Negara, M. A.; Hurley, P. K.

    2015-11-28

    An alternative multi-frequency inversion-charge pumping (MFICP) technique was developed to directly separate the inversion charge density (N{sub inv}) from the trapped charge density in high-k/InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). This approach relies on the fitting of the frequency response of border traps, obtained from inversion-charge pumping measurements performed over a wide range of frequencies at room temperature on a single MOSFET, using a modified charge trapping model. The obtained model yielded the capture time constant and density of border traps located at energy levels aligned with the InGaAs conduction band. Moreover, the combination of MFICP and pulsed I{sub d}-V{sub g} measurements enabled an accurate effective mobility vs N{sub inv} extraction and analysis. The data obtained using the MFICP approach are consistent with the most recent reports on high-k/InGaAs.

  2. Effects of Hot Carriers on DC and RF Performances of Deep Submicron p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Various Oxide Layer Thicknesses

    NASA Astrophysics Data System (ADS)

    Tang, Mao-Chyuan; Fang, Yean-Kuen; Liao, Wen-Shiang; Chen, David C.; Yeh, Chune-Sin; Chien, Shan-Chieh

    2008-04-01

    In this work, the effects of hot carriers on the DC and RF performances of 45 nm p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) with various oxide layer thicknesses were investigated in detail by RF automatic measurements. It was found that a PMOSFET with a thinner oxide layer suffers more serious damage from hot carriers than that with a thicker oxide layer. Also, the greatest degradation occurs at the bias condition when gate stress voltage Vgstr is equal to drain stress voltage Vdstr, and it was found that the degradation of the cutoff frequency fT is dependent on transconductance gm only. This is different from conventional long-channel devices, in which the greatest degradation takes place at Vgstr = Vdstr/2 and when fT is dependent on both gm and the total gate capacitance Cgg (=Cgs+Cgd).

  3. Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Ťapajna, M.; Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Brunner, F.; Cho, E.-M.; Kuzmík, J.

    2013-06-01

    The trapping phenomena in GaN metal-oxide-semiconductor high-electron mobility transistor structures with 10 and 20-nm thick Al2O3 gate dielectric grown by metal-organic chemical vapor deposition were deeply investigated using comprehensive capacitance-voltage measurements. By controlling the interface traps population, substantial electron trapping in the dielectric bulk was identified. Separation between the trapping process and the interface traps emission allowed us to determine distribution of interface trap density in a wide energy range. Temperature dependence of the trapping process indicates thermionic field emission of electrons from the gate into traps with a sheet density of ~1013 cm-2, located a few nm below the gate.

  4. Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Ťapajna, M.; Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Brunner, F.; Cho, E.-M.; Kuzmík, J.

    2013-06-01

    The trapping phenomena in GaN metal-oxide-semiconductor high-electron mobility transistor structures with 10 and 20-nm thick Al2O3 gate dielectric grown by metal-organic chemical vapor deposition were deeply investigated using comprehensive capacitance-voltage measurements. By controlling the interface traps population, substantial electron trapping in the dielectric bulk was identified. Separation between the trapping process and the interface traps emission allowed us to determine distribution of interface trap density in a wide energy range. Temperature dependence of the trapping process indicates thermionic field emission of electrons from the gate into traps with a sheet density of ˜1013 cm-2, located a few nm below the gate.

  5. Compositional and electrical properties of Si metal-oxide-semiconductor structure prepared by direct photoenhanced chemical vapor deposition using a deuterium lamp

    NASA Astrophysics Data System (ADS)

    Shei, S. C.; Su, Y. K.; Hwang, C. J.; Yokoyama, M.; Pan, F. M.

    1995-03-01

    High quality SiO2 layers have been grown on (111) Si substrates by direct photoenhanced chemical vapor deposition using monosilane SiH4 and oxygen O2 as gas sources under irradiation of a deuterium lamp. The refractive index of the deposited oxide is 1.462 at 250 C when the gas ratio O2/SiH4 is 5. The measurements of the Fourier transform infrared spectrum, x ray photoelectron spectroscopy, and Auger electron spectroscopy show that the dominant components of the oxide are silicon and oxygen and the film is SiO2. Hysteresis free capacitance-voltage characteristics of the metal-oxide-semiconductor diode was observed. After low temperature postoxidation annealing, the minimum interface trap density is 1.5 x 10(exp 11)/sq cm eV(sup - 1), which is comparable to that of thermal oxidation.

  6. Tensile-Strained GeSn Metal-Oxide-Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Lieten, Ruben R.; Maeda, Tatsuro; Jevasuwan, Wipakorn; Hattori, Hiroyuki; Uchida, Noriyuki; Miura, Shu; Tanaka, Masatoshi; Locquet, Jean-Pierre

    2013-10-01

    We demonstrate tensile-strained GeSn metal-oxide-semiconductor field-effect transistor (MOSFET) devices on Si(111) substrates using solid phase epitaxy of amorphous GeSn layers. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by solid phase epitaxy. Single-crystalline GeSn layers with 4.5% Sn and 0.33% tensile strain are fabricated on Si(111) substrates. To verify the structural quality of thin-film GeSn as a channel material, we fabricate ultrathin GeSn p-channel MOSFETs (pMOSFETs) on Si(111). We demonstrate junctionless depletion-mode operation of tensile-strained GeSn(111) pMOSFETs on Si substrates.

  7. Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

    NASA Astrophysics Data System (ADS)

    Wang, Lanxiang; Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia

    2013-05-01

    High-mobility strained Ge0.958Sn0.042 p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide [(NH4)2S] surface passivation were demonstrated. A ˜10 nm thick fully-strained single crystalline GeSn layer was epitaxially grown on Ge (1 0 0) substrate as the channel layer. (NH4)2S surface passivation was performed for the GeSn surface, followed by gate stack formation. Ge0.958Sn0.042 p-MOSFETs with (NH4)2S passivation show decent electrical characteristics and a peak effective mobility of 509 cm2/V s, which is the highest reported peak mobility obtained for GeSn channel p-MOSFETs so far.

  8. Analysis of Channel Stress Induced by NiPt-Silicide in Metal-Oxide-Semiconductor Field-Effect Transistor and Its Generation Mechanism

    NASA Astrophysics Data System (ADS)

    Mizuo, Mariko; Yamaguchi, Tadashi; Kudo, Shuichi; Hirose, Yukinori; Kimura, Hiroshi; Tsuchimoto, Jun-ichi; Hattori, Nobuyoshi

    2013-09-01

    Channel stress induced by NiPt-silicide films in metal-oxide-semiconductor field-effect transistors (MOSFETs) was demonstrated using UV-Raman spectroscopy, and its generation mechanism was revealed. It was possible to accurately measure the channel stress with the Raman test structure. The channel stress depends on the source/drain doping type and the second silicide annealing method. In order to discuss the channel stress generation mechanism, NiPt-silicide microstructure analyses were performed using X-ray diffraction analysis and scanning transmission electron microscopy. The channel stress generation mechanism can be elucidated by the following two factors: the change in the NiSi lattice spacing, which depends on the annealing temperature, and the NiSi crystal orientation. The analyses of these factors are important for controlling channel stress in stress engineering for high-performance transistors.

  9. GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

    NASA Astrophysics Data System (ADS)

    Wang, Qingpeng; Ao, Jin-Ping; Wang, Pangpang; Jiang, Ying; Li, Liuan; Kawaharada, Kazuya; Liu, Yang

    2015-04-01

    GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2·V-1·s-1. The effects of etching gas of Cl2 and SiCl4 were investigated in the gate recess process. SiCl4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2-masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.

  10. A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

    NASA Astrophysics Data System (ADS)

    Zhu, Feng; Zhao, Han; Ok, I.; Kim, H. S.; Yum, J.; Lee, Jack C.; Goel, Niti; Tsai, W.; Gaspe, C. K.; Santos, M. B.

    2009-01-01

    In this letter, we demonstrate a high performance In0.53Ga0.47As channel n-type metal-oxide-semiconductor field effect transistor with silicon interface passivation layer (IPL) and HfO2 gate oxide. Owing to the effectiveness of Si IPL on improving the interface quality, good device characteristics have been obtained, including the peak transconductance of 7.7 mS/mm (Lg=5 μm and Vd=50 mV), drive current of 158 mA/mm (Lg=5 μm, Vgs=Vth+2 V, and Vd=2.5 V), and the peak effective channel mobility of 1034 cm2/V s. As an important factor on device design, the impact of silicon IPL thickness on the transistor characteristics has been investigated.

  11. Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO 2-GaAs metal-oxide-semiconductor devices

    NASA Astrophysics Data System (ADS)

    Kundu, Souvik; Shripathi, T.; Banerji, P.

    2011-12-01

    This work deals with the fabrication of a GaAs metal-oxide-semiconductor device with an unpinned interface environment. An ultrathin ( ˜2 nm) interface passivation layer (IPL) of ZnO on GaAs was grown by metal organic chemical vapor deposition to control the interface trap densities and to prevent the Fermi level pinning before high-k deposition. X-ray photoelectron spectroscopy and high resolution transmission electron microscopy results show that an ultra thin layer of ZnO IPL can effectively suppress the oxides formation and minimize the Fermi level pinning at the interface between the GaAs and ZrO 2. By incorporating ZnO IPL, GaAs MOS devices with improved capacitance-voltage and reduced gate leakage current were achieved. The charge trapping behavior of the ZrO 2/ZnO gate stack under constant voltage stressing exhibits an improved interface quality and high dielectric reliability.

  12. INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Hu, Guang-Xi; Wang, Ling-Li; Liu, Ran; Tang, Ting-Ao; Qiu, Zhi-Jun

    2010-10-01

    As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate (SG) nMOSFET is developed. The Schrödinger equation is solved analytically. Some of the solutions are verified via results obtained from simulations. It is found that the percentage of the electrons with lighter conductivity mass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases. The centroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carriers will suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.

  13. Effects of HCl treatment and predeposition vacuum annealing on Al2O3/GaSb/GaAs metal-oxide-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Gotow, Takahiro; Fujikawa, Sachie; Fujishiro, Hiroki I.; Ogura, Mutsuo; Yasuda, Tetsuji; Maeda, Tatsuro

    2015-02-01

    The effects of HCl treatment and predeposition vacuum annealing (VA) on n-type GaSb/GaAs metal-oxide-semiconductor (MOS) structures with the atomic layer deposition (ALD) of Al2O3 dielectrics are studied. We obtained MOS structures with good Fermi level modulation by HCl treatment prior to the deposition of Al2O3. From X-ray photoelectron spectroscopy (XPS) analysis, we found that the Ga2O3 content increases during the Al2O3 deposition, whereas the amounts of Sb components are reduced. The excess growth of Ga2O3 is inhibited by the reductions in the amounts of Sb components by the HCl treatment. Further reductions in the amounts of Sb components are observed following predeposition VA, indicating a lower density of states (Dit). However, the frequency dispersion in the capacitance-voltage (C-V) characteristics increases with predeposition VA at higher temperatures.

  14. Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques

    PubMed Central

    2014-01-01

    The simple self-aligned photolithography technique and laser interference photolithography technique were proposed and utilized to fabricate multiple-gate ZnO metal-oxide-semiconductor field-effect transistors (MOSFETs). Since the multiple-gate structure could improve the electrical field distribution along the ZnO channel, the performance of the ZnO MOSFETs could be enhanced. The performance of the multiple-gate ZnO MOSFETs was better than that of the conventional single-gate ZnO MOSFETs. The higher the drain-source saturation current (12.41 mA/mm), the higher the transconductance (5.35 mS/mm) and the lower the anomalous off-current (5.7 μA/mm) for the multiple-gate ZnO MOSFETs were obtained. PMID:24948884

  15. Magnetically modulated laser-induced resistance effect observed in Metal-Oxide-Semiconductor structure of Cr/SiO(2)/Si.

    PubMed

    Xie, Xin; Liu, Shuai; Huang, Meizhen; Wang, Hui

    2015-09-21

    In this study, we report our finding of laser-induced resistance effect in metal-oxide-semiconductor (MOS) structure of Cr/SiO(2)/Si. Under the irradiation of a laser beam, the effect shows a large linear resistance change ratio of 92% with a spatial sensitivity of 0.79 MΩ/mm. In particular, by the application of an external magnetic field perpendicular to the Cr film, the resistance change ratio is increased to 110%. This effect is attributed to the Lorentz force acting on the photo-generated carriers in the inversion layer of MOS structures. The work suggests an approach for the development of new type magnetically modulated photoelectric devices. PMID:26406634

  16. Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Yang, Yunxiang; Du, Gang; Han, Ruqi; Liu, Xiaoyan

    2011-04-01

    The effects of intrinsic parameter fluctuations, including line-edge-roughness (LER), silicon-body thickness variation (STV) and work-function variation (WFV), in 20-nm-gate variable-γ silicon-on-thin-box (SOTB) metal oxide semiconductor field effect transistors (MOSFETs) have been investigated and compared with those of the conventional SOTB. Results show that the variable-γ SOTB offers not only an enhanced Ion but also a reduced Ion fluctuation with a small increase in the active-state Ioff fluctuation. The Vth-roll-off value in the variable-γ SOTB can be reduced by adopting a reverse-biased side gate to optimize the short channel effect, but the variability of the DIBL effect is enlarged. It is expected that a thinner silicon body can be used to reduce the dominant variability sources.

  17. Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces

    SciTech Connect

    Nishi, K. Takenaka, M.; Takagi, S.; Yokoyama, M.; Yokoyama, H.; Hoshi, T.; Sugiyama, H.

    2014-12-08

    We demonstrate the operation of GaSb p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on (111)A surfaces with Al{sub 2}O{sub 3} gate dielectrics formed by atomic-layer deposition at 150 °C. The p-MOSFETs on (111)A surfaces exhibit higher drain current and lower subthreshold swing than those on (100) surfaces. We find that the interface-state density (D{sub it}) values at the Al{sub 2}O{sub 3}/GaSb MOS interfaces on the (111)A surfaces are lower than those on the (100) surfaces, which can lead to performance enhancement of the GaSb p-MOSFETs on (111)A surfaces. The mobility of the GaSb p-MOSFETs on (111)A surfaces is 80% higher than that on (100) surfaces.

  18. Electron detrapping characteristics in positive bias temperature stressed n-channel metal-oxide-semiconductor field-effect transistors with ultrathin HfSiON gate dielectrics

    NASA Astrophysics Data System (ADS)

    Zhu, Shiyang; Nakajima, Anri

    2007-07-01

    Electrons trapped in the HfSiON gate dielectrics of n-channel metal-oxide-semiconductor field-effect transistors induced by positive bias temperature stress start to decay when the stress is interrupted or an opposite (recovery) voltage is applied. The decay begins with a quick detrapping within tens of nanoseconds followed by a slow detrapping. The quick detrapping depends on the recovery voltage and the trapping history, whereas the slow detrapping obeys approximately a logarithmic dependence on time with an almost identical slope before saturation. The observed detrapping behavior can be explained by a spatial and/or energetic distribution of trapped electrons in the HfSiON film. The device degradation under various dynamic stresses is found to be almost independent of frequency ranging from 0.001to1MHz, while it is slightly enhanced at 10MHz, probably due to insufficient recovery at the recovering half cycle.

  19. Temperature-independent switching rates for a random telegraph signal in a silicon metal-oxide-semiconductor field-effect transistor at low temperatures

    SciTech Connect

    Scofield, John H.; Borland, Nick; Fleetwood, D. M.

    2000-05-29

    We have observed discrete random telegraph signals (RTSs) in the drain voltages of three, nominally 1.25 {mu}mx1.25 {mu}m, enhancement-mode p-channel metal-oxide-semiconductor transistors operated in strong inversion in their linear regimes with constant drain-current and gate-voltage bias, for temperatures ranging from 4.2 to 300 K. The switching rates for all RTSs observed above 30 K were thermally activated. The switching rate for the only RTS observed below 30 K was thermally activated above 30 K but temperature independent below 10 K. This response is consistent with a crossover from thermal activation to tunneling at low temperatures. Implications are discussed for models of change exchange between the Si and the near-interfacial SiO{sub 2}. (c) 2000 American Institute of Physics.

  20. Trap Profiling Based on Frequency Varied Charge Pumping Method for Hot Carrier Stressed Thin Gate Oxide Metal Oxide Semiconductors Field Effect Transistors.

    PubMed

    Choi, Pyungho; Kim, Hyunjin; Kim, Sangsub; Kim, Soonkon; Javadi, Reza; Park, Hyoungsun; Choi, Byoungdeog

    2016-05-01

    In this study, pulse frequency and reverse bias voltage is modified in charge pumping and advanced technique is presented to extract oxide trap profile in hot carrier stressed thin gate oxide metal oxide semiconductor field effect transistors (MOSFETs). Carrier trapping-detrapping in a gate oxide was analyzed after hot carrier stress and the relationship between trapping depth and frequency was investigated. Hot carrier induced interface traps appears in whole channel area but induced border traps mainly appears in above pinch-off region near drain and gradually decreases toward center of the channel. Thus, hot carrier stress causes interface trap generation in whole channel area while most border trap generation occurs in the drain region under the gate. Ultimately, modified charge pumping method was performed to get trap density distribution of hot carrier stressed MOSFET devices, and the trapping-detrapping mechanism is also analyzed. PMID:27483833

  1. Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

    SciTech Connect

    Chidambaram, Thenappan; Madisetti, Shailesh; Greene, Andrew; Yakimov, Michael; Tokranov, Vadim; Oktyabrsky, Serge; Veksler, Dmitry; Hill, Richard

    2014-03-31

    In this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, mobility over 8000 cm{sup 2}/Vs is observed at ∼1.4 × 10{sup 12} cm{sup −2}. Temperature dependence of the electron mobility gives the evidence that remote Coulomb scattering dominates at electron density <2 × 10{sup 11} cm{sup −2}. Spectrum of the interface/border traps is quantified from comparison of Hall data with capacitance-voltage measurements or electrostatic modeling. Above the threshold voltage, gate control is strongly limited by fast traps that cannot be distinguished from free channel carriers just by capacitance-based methods and can be the reason for significant overestimation of channel density and underestimation of carrier mobility from transistor measurements.

  2. Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

    SciTech Connect

    Kanaki, Toshiki Asahara, Hirokatsu; Ohya, Shinobu Tanaka, Masaaki

    2015-12-14

    We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

  3. Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

    NASA Astrophysics Data System (ADS)

    Liao, Xue-Yang; Zhang, Kai; Zeng, Chang; Zheng, Xue-Feng; En, Yun-Fei; Lai, Ping; Hao, Yue

    2014-05-01

    Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) structures. Two types of device structures, namely, the recessed gate structure (RGS) and the normal gate structure (NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ET in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching (RIE).

  4. Carrier-density-wave transport and local internal electric field measurements in biased metal-oxide-semiconductor n-Si devices using contactless laser photo-carrier radiometry

    NASA Astrophysics Data System (ADS)

    Mandelis, Andreas; Pawlak, Micha; Shaughnessy, Derrick

    2004-11-01

    Laser infrared photo-carrier radiometry was used with an n-type Si metal-oxide-semiconductor (MOS) diode and with a Si-SiO2 structure with a transparent electrode and under external bias. Application of three-dimensional PCR theory yielded values of the minority carrier (hole) transport properties in the presence of the thus created local internal electric field at fixed frequencies. Furthermore, the internal electric field at fixed applied voltage was calculated. Under the combination of increased temperature and voltage, the sub-interface position of the carrier-density-wave centroid was found to depend on a trade-off between increased recombination lifetime and decreased ambipolar (conductivity) mobility. The ability of PCR to measure local internal electric fields by combining applied bias sweeps and frequency scans appears to pave the way towards the contactless reconstruction of depth profiles of these fields in active devices.

  5. Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices

    NASA Astrophysics Data System (ADS)

    Massoud, Hisham Z.; Przewlocki, Henryk M.

    2002-08-01

    In this article, we report the results of a study of the effects of high-temperature stress annealing in nitrogen on the index of refraction of SiO2 layers in metal/oxide/semiconductor (MOS) devices. In this study, we have experimentally characterized the dependence of mechanical stress in the Si-SiO2 system on the oxidation and annealing conditions and correlated such properties with the dependence of the index of refraction on processing conditions and oxide thickness. We consider the contributions of the thermal-relaxation and nitrogen-incorporation processes in determining changes in the index of refraction with annealing time. This description is consistent with other annealing studies carried out in argon where only the thermal-relaxation process is present. Correlations of these experimental observations with the electrical properties of the same MOS devices are presented in a companion article.

  6. A Unified Functional Reliability Model for N-channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub 2 nm Gate Oxide

    NASA Astrophysics Data System (ADS)

    Lee, Hai-Ming; Du, Long-Jye; Liang, Mong-Song; King, Ya-Ching; Hsu, Charles Ching-Hsiang

    2002-09-01

    Reliability tests of N-channel metal-oxide-semiconductor field-effect transistors (NMOSFET’s) with oxide thickness ranging from 3.3 nm to 1.7 nm are performed and analyzed in this work. New device failure mechanism due to gate-to-drain leakage path formation is observed, and it severely degrades the off-state performance of devices with sub 2 nm gate oxides. Among the device parameters monitored, on-state conduction current and off-state drain leakage are the two most decisive parameters which dominate NMOSFET’s functional reliability. A new unified functional reliability model is proposed, and lifetime predictions due to respective device parameters can be achieved.

  7. The n-type metal-oxide semiconductor field-effect transistor bias impact on the modelling of the gate-induced drain leakage current

    NASA Astrophysics Data System (ADS)

    Touhami, A.; Bouhdada, A.

    2002-12-01

    The band-to-band tunnelling (BBT) effect in an n-type metal-oxide semiconductor field-effect transistor (n-MOSFET) is attributed not only to the transverse electric field ET but also to the lateral electric field EL in the gate-to-drain overlap region. The main sources of these electric fields are the gate-source (Vgs) and drain-source (Vds) voltages. The modelling of the gate-induced drain leakage current, Igidl, associated with BBT remains always dependent on the drain-gate voltage, Vdg, whatever the applied values of Vgs and Vds, which cannot describe accurately the evolution of the Igidl current according to biases. Therefore, it is necessary to clarify the impact of Vgs and Vds separately. In this paper, we propose a new model of the Igidl current, which can describe the BBT effect in n-MOSFETs under various Vgs and Vds biases.

  8. The influence of electron energy quantization in a space-charge region on the accumulation capacitance of InAs metal-oxide-semiconductor capacitors

    SciTech Connect

    Kovchavtsev, A. P. Tsarenko, A. V.; Guzev, A. A.; Polovinkin, V. G.; Nastovjak, A. E.; Valisheva, N. A.; Aksenov, M. S.

    2015-09-28

    The influence of electron energy quantization in a space-charge region on the accumulation capacitance of the InAs-based metal-oxide-semiconductor capacitors (MOSCAPs) has been investigated by modeling and comparison with the experimental data from Au/anodic layer(4-20 nm)/n-InAs(111)A MOSCAPs. The accumulation capacitance for MOSCAPs has been calculated by the solution of Poisson equation with different assumptions and the self-consistent solution of Schrödinger and Poisson equations with quantization taken into account. It was shown that the quantization during the MOSCAPs accumulation capacitance calculations should be taken into consideration for the correct interface states density determination by Terman method and the evaluation of gate dielectric thickness from capacitance-voltage measurements.

  9. Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes

    SciTech Connect

    Lin, Chien-Chih; Hsu, Pei-Lun; Lin, Li; Hwu, Jenn-Gwo

    2014-03-28

    A particular edge-dependent inversion current behavior of metal-oxide-semiconductor (MOS) tunneling diodes was investigated utilizing square and comb-shaped electrodes. The inversion tunneling current exhibits the strong dependence on the tooth size of comb-shaped electrodes and oxide thickness. Detailed illustrations of current conduction mechanism are developed by simulation and experimental measurement results. It is found that the electron diffusion current and Schottky barrier height lowering for hole tunneling current both contribute on inversion current conduction. In MOS tunneling photodiode applications, the photoresponse can be improved by decreasing SiO{sub 2} thickness and using comb-shaped electrodes with smaller tooth spacing. Meantime, the high and steady photosensitivity can also be approached by introducing HfO{sub 2} into dielectric stacks.

  10. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

    NASA Astrophysics Data System (ADS)

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-03-01

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of ‑2 V and drain bias of ‑15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm2/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG.

  11. Mobility enhancement of strained GaSb p-channel metal-oxide-semiconductor field-effect transistors with biaxial compressive strain

    NASA Astrophysics Data System (ADS)

    Yan-Wen, Chen; Zhen, Tan; Lian-Feng, Zhao; Jing, Wang; Yi-Zhou, Liu; Chen, Si; Fang, Yuan; Wen-Hui, Duan; Jun, Xu

    2016-03-01

    Various biaxial compressive strained GaSb p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are experimentally and theoretically investigated. The biaxial compressive strained GaSb MOSFETs show a high peak mobility of 638 cm2/V·s, which is 3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain. Meanwhile, first principles calculations show that the hole effective mass of GaSb depends on the biaxial compressive strain. The biaxial compressive strain brings a remarkable enhancement of the hole mobility caused by a significant reduction in the hole effective mass due to the modulation of the valence bands. Project supported by the National Basic Research Program of China (Grant No. 2011CBA00602) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02708-002).

  12. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.

    PubMed

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-01-01

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of -2 V and drain bias of -15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm(2)/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG. PMID:27021054

  13. The empirical dependence of radiation-induced charge neutralization on negative bias in dosimeters based on the metal-oxide-semiconductor field-effect transistor

    SciTech Connect

    Benson, Chris; Albadri, Abdulrahman; Joyce, Malcolm J.; Price, Robert A.

    2006-08-15

    The dependence of radiation-induced charge neutralization (RICN) has been studied in metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters. These devices were first exposed to x rays under positive bias and then to further dose increments at a selection of reverse bias levels. A nonlinear empirical trend has been established that is consistent with that identified in the data obtained in this work. Estimates for the reverse bias level corresponding to the maximum rate of RICN have been extracted from the data. These optimum bias levels appear to be independent of the level of initial absorbed dose under positive bias. The established models for threshold voltage change have been considered and indicate a related nonlinear trend for neutralization cross section {sigma}{sub N} as a function of oxide field. These data are discussed in the context of dose measurement with MOSFETs and within the framework of statistical mechanics associated with neutral traps and their field dependence.

  14. Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

    NASA Astrophysics Data System (ADS)

    Liuan, Li; Jiaqi, Zhang; Yang, Liu; Jin-Ping, Ao

    2016-03-01

    In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 °C with the contact resistance approximately 1.6 Ω·mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs. Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260).

  15. Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

    NASA Astrophysics Data System (ADS)

    Lu, Anh Khoa Augustin; Pourtois, Geoffrey; Agarwal, Tarun; Afzalian, Aryan; Radu, Iuliana P.; Houssa, Michel

    2016-01-01

    The impact of the scaling of the channel length on the performances of metal-oxide-semiconductor field effect transistors, based on two-dimensional (2D) channel materials, is theoretically investigated, using density functional theory combined with the non-equilibrium Green's function method. It is found that the scaling of the channel length below 10 nm leads to strong device performance degradations. Our simulations reveal that this degradation is essentially due to the tunneling current flowing between the source and the drain in these aggressively scaled devices. It is shown that this electron tunneling process is modulated by the effective mass of the 2D channel material, and sets the limit of the scaling in future transistor designs.

  16. Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal-oxide-semiconductor field effect transistor structure (invited)

    NASA Astrophysics Data System (ADS)

    Hamaya, K.; Ando, Y.; Masaki, K.; Maeda, Y.; Fujita, Y.; Yamada, S.; Sawano, K.; Miyao, M.

    2013-05-01

    Using a metal-oxide-semiconductor field effect transistor structure with a high-quality CoFe/n+-Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ˜4.5 × 1015 cm-3 at room temperature. By applying the gate voltage (VG) to the channel, we obtain sufficient bias currents (IBias) for creating spin accumulation in the channel and observe clear spin-accumulation signals even at room temperature. Whereas the magnitude of the spin signals is enhanced by increasing IBias, it is reduced by increasing VG interestingly. These features can be understood within the framework of the conventional spin diffusion model. As a result, a room-temperature spin injection technique for the nondegenerated Si channel without using insulating tunnel barriers is established, which indicates a technological progress for Si-based spintronic applications with gate electrodes.

  17. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling.

    PubMed

    Koswatta, Siyuranga O; Lundstrom, Mark S; Nikonov, Dmitri E

    2007-05-01

    Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the nonequilibrium Green's function formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (J. Am. Chem. Soc. 2006, 128, 3518-3519), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics. It is shown that, under large biasing conditions, two-phonon scattering may also become important. PMID:17388638

  18. Memory characteristics of metal-oxide-semiconductor capacitor with high density cobalt nanodots floating gate and HfO2 blocking dielectric

    NASA Astrophysics Data System (ADS)

    Pei, Yanli; Yin, Chengkuan; Kojima, Toshiya; Nishijima, Masahiko; Fukushima, Takafumi; Tanaka, Tetsu; Koyanagi, Mitsumasa

    2009-07-01

    In this letter, cobalt nanodots (Co-NDs) had been formed via a self-assembled nanodot deposition. High resolution transmission electron microscopy and x-ray photoelectron spectroscopy analyses clearly show that the high metallic Co-ND is crystallized with small size of ˜2 nm and high density of (4-5)×1012/cm2. The metal-oxide-semiconductor device with high density Co-NDs floating gate and high-k HfO2 blocking dielectric exhibits a wide range memory window (0-12 V) due to the charge trapping into and distrapping from Co-NDs. After 10 years retention, a large memory window of ˜1.3 V with a low charge loss of ˜47% was extrapolated. The relative longer data retention demonstrates the advantage of Co-NDs for nonvolatile memory application.

  19. Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Ong, B. S.; Pey, K. L.; Ong, C. Y.; Tan, C. S.; Antoniadis, D. A.; Fitzgerald, E. A.

    2011-05-01

    We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi2 metal gate process for In0.53Ga0.47As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al2O3 as dielectric layer. The CVD-processed metal gate device with 6.5 nm Al2O3 shows enhanced transistor performance such as drive current, maximum transconductance and maximum effective mobility. These values are relatively better than the PVD-processed counterpart device with improvement of 51.8%, 46.4%, and 47.8%, respectively. The improvement for the performance of the CVD-processed metal gate device is due to the fluorine passivation at the oxide/semiconductor interface and a nondestructive deposition process.

  20. Direct observation of both contact and remote oxygen scavenging of GeO{sub 2} in a metal-oxide-semiconductor stack

    SciTech Connect

    Fadida, S. Shekhter, P.; Eizenberg, M.; Cvetko, D.; Floreano, L.; Verdini, A.; Kymissis, I.

    2014-10-28

    In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al{sub 2}O{sub 3} layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

  1. Commercialisation of CMOS Integrated Circuit Technology in Multi-Electrode Arrays for Neuroscience and Cell-Based Biosensors

    PubMed Central

    Graham, Anthony H. D.; Robbins, Jon; Bowen, Chris R.; Taylor, John

    2011-01-01

    The adaptation of standard integrated circuit (IC) technology as a transducer in cell-based biosensors in drug discovery pharmacology, neural interface systems and electrophysiology requires electrodes that are electrochemically stable, biocompatible and affordable. Unfortunately, the ubiquitous Complementary Metal Oxide Semiconductor (CMOS) IC technology does not meet the first of these requirements. For devices intended only for research, modification of CMOS by post-processing using cleanroom facilities has been achieved. However, to enable adoption of CMOS as a basis for commercial biosensors, the economies of scale of CMOS fabrication must be maintained by using only low-cost post-processing techniques. This review highlights the methodologies employed in cell-based biosensor design where CMOS-based integrated circuits (ICs) form an integral part of the transducer system. Particular emphasis will be placed on the application of multi-electrode arrays for in vitro neuroscience applications. Identifying suitable IC packaging methods presents further significant challenges when considering specific applications. The various challenges and difficulties are reviewed and some potential solutions are presented. PMID:22163884

  2. Biosensors.

    ERIC Educational Resources Information Center

    Rechnitz, Garry A.

    1988-01-01

    Describes theory and principles behind biosensors that incorporate biological components as part of a sensor or probe. Projects major applications in medicine and veterinary medicine, biotechnology, food and agriculture, environmental studies, and the military. Surveys current use of biosensors. (ML)

  3. Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

    SciTech Connect

    Yokoyama, Masafumi Takenaka, Mitsuru; Takagi, Shinichi; Yokoyama, Haruki

    2015-02-16

    We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al{sub 2}O{sub 3} and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET exhibits the peak effective mobility of ∼76 cm{sup 2}/V s. We have found that the effective hole mobility of the thin-body GaSb-OI p-MOSFETs decreases with a decrease in the GaSb-OI thickness or with an increase in Al{sub 2}O{sub 3} ALD temperature. The InAs passivation of GaSb-OI MOS interfaces can enhance the peak effective mobility up to 159 cm{sup 2}/V s for GaSb-OI p-MOSFETs with the 20-nm-thick GaSb layer.

  4. Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility

    NASA Astrophysics Data System (ADS)

    Liu, Yan; Yan, Jing; Wang, Hongjuan; Cheng, Buwen; Han, Genquan

    2015-06-01

    Compressively strained and p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated with low-temperature surface passivation. High crystallinity GeSn films epitaxially grown on a Ge(001) substrate are used for the device fabrication. The impacts of the Sn composition on the subthreshold swing , threshold voltage , on-state current , and effective hole mobility of the devices are investigated. GeSn pMOSFETs with different Sn compositions show a similar , indicating almost the same midgap density of interface states . A positive shift of with an increase of the Sn composition is observed. A pMOSFET exhibits a significant improvement in as compared to a device with a lower Sn composition, which is due to the superior hole mobility in a device with a higher Sn composition. pMOSFETs achieve a peak effective hole mobility of , which is much higher than that of devices. The enhancement of the compressive strain and chemical effect in the channel region with increased Sn composition leads to an improvement of.

  5. Electron power loss in the (100) n channel of a Si metal-oxide-semiconductor field-effect transistor. I. Intrasubband phonon scattering

    NASA Astrophysics Data System (ADS)

    Krowne, Clifford M.

    1983-05-01

    The electron energy relaxation is studied as a function of the ``electron temperature'' Te in the n channel of a (100) surface silicon MOSFET (metal-oxide-semiconductor field-effect transistor) device by inspecting the phenomenological energy relaxation time τɛ(Te) at 4.2 °K, 77 °K, and 300 °K lattice temperatures. τɛ is theoretically calculated in order to determine the relative contributions of shear horizontal (SH), pressure-shear vertical (P-SV), shear vertical-pressure (SV-P), total reflection shear vertical pressure (TR), and Rayleigh (R) surface acoustic phonon modes to the electron energy relaxation at the interface. Two-dimensional electron transport is assumed and the effects of subbanding near the interface are included. Only electron scatter events within subbands are studied (intrasubband). This exhaustive study finds that surface modes do not dominate the electron energy relaxation at the Si-SiO2 interface at TL =4.2 °K. Some other mechanism(s) must predominate at TL =4.2 °K.

  6. Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

    NASA Astrophysics Data System (ADS)

    Minoura, Yuya; Kasuya, Atsushi; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2013-07-01

    High-quality Ge-based metal-oxide-semiconductor (MOS) stacks were achieved with ultrathin oxynitride (GeON) gate dielectrics. An in situ process based on plasma nitridation of the base germanium oxide (GeO2) surface and subsequent metal electrode deposition was proven to be effective for suppressing electrical deterioration induced by the reaction at the metal/insulator interface. The electrical properties of the bottom GeON/Ge interface were further improved by both low-temperature oxidation for base GeO2 formation and high-temperature in situ vacuum annealing after plasma nitridation of the base oxide. Based on the optimized in situ gate stack fabrication process, very high inversion carrier mobility (μhole: 445 cm2/Vs, μelectron: 1114 cm2/Vs) was demonstrated for p- and n-channel Ge MOSFETs with Al/GeON/Ge gate stacks at scaled equivalent oxide thickness down to 1.4 nm.

  7. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

    PubMed Central

    Liu, Xinke; Lu, Youming; Yu, Wenjie; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun; Chen, Shaojun; Seow Tan, Leng

    2015-01-01

    Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement. PMID:26364872

  8. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

    NASA Astrophysics Data System (ADS)

    Liu, Xinke; Lu, Youming; Yu, Wenjie; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun; Chen, Shaojun; Seow Tan, Leng

    2015-09-01

    Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement.

  9. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

    NASA Astrophysics Data System (ADS)

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-04-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade-1 and 3.62 × 1011 eV-1 cm-2, respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

  10. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

    PubMed

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-12-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade(-1) and 3.62 × 10(11) eV(-1) cm(-2), respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT. PMID:27129687

  11. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

    NASA Astrophysics Data System (ADS)

    Zhang, Tian; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-01

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO2. The ncSi thin films with high resistivity (200-400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO2/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 1018-1019 cm-3 despite their high resistivity. The saturation of doping at about 1.4 × 1019 cm-3 and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10-3 cm2/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  12. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    NASA Astrophysics Data System (ADS)

    Islam, Sk Masiul; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.; Mukherjee, Rabibrata

    2015-06-01

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO2 and ZrO2, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×1011 cm-2, respectively. The device with a structure Metal/ZrO2/InAs QDs/HfO2/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10-6 A/cm2 and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO2 deposition.

  13. Rapid thermal chemical vapor deposition of in situ boron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications

    NASA Astrophysics Data System (ADS)

    Li, V. Z.-Q.; Mirabedini, M. R.; Kuehn, R. T.; Wortman, J. J.; Öztürk, M. C.; Batchelor, D.; Christensen, K.; Maher, D. M.

    1997-12-01

    In situ boron-doped polycrystalline Si1-xGex (x>0.4) films have been formed on the thermally grown oxides in a rapid thermal chemical vapor deposition processor using SiH4-GeH4-B2H6-H2 gas system. Our results showed that in situ boron-doped Si1-xGex films can be directly deposited on the oxide surface, in contrast to the rapid thermal deposition of undoped silicon-germanium (Si1-xGex) films on oxides which is a partially selective process and requires a thin silicon film pre-deposition to form a continuous film. For the in situ boron-doped Si1-xGex films, we observed that with the increase of the germane percentage in the gas source, the Ge content and the deposition rate of the film are increased, while its resistivity is decreased down to 0.66 mΩ cm for a Ge content of 73%. Capacitance-voltage characteristics of p-type metal-oxide-semiconductor capacitors with p+-Si1-xGex gates showed negligible polydepletion effect for a 75 Å gate oxide, indicating that a high doping level of boron at the poly-Si1-xGex/oxide interface was achieved.

  14. Modeling of anisotropic two-dimensional materials monolayer HfS{sub 2} and phosphorene metal-oxide semiconductor field effect transistors

    SciTech Connect

    Chang, Jiwon

    2015-06-07

    Ballistic transport characteristics of metal-oxide semiconductor field effect transistors (MOSFETs) based on anisotropic two-dimensional materials monolayer HfS{sub 2} and phosphorene are explored through quantum transport simulations. We focus on the effects of the channel crystal orientation and the channel length scaling on device performances. Especially, the role of degenerate conduction band (CB) valleys in monolayer HfS{sub 2} is comprehensively analyzed. Benchmarking monolayer HfS{sub 2} with phosphorene MOSFETs, we predict that the effect of channel orientation on device performances is much weaker in monolayer HfS{sub 2} than in phosphorene due to the degenerate CB valleys of monolayer HfS{sub 2}. Our simulations also reveal that at 10 nm channel length scale, phosphorene MOSFETs outperform monolayer HfS{sub 2} MOSFETs in terms of the on-state current. However, it is observed that monolayer HfS{sub 2} MOSFETs may offer comparable, but a little bit degraded, device performances as compared with phosphorene MOSFETs at 5 nm channel length.

  15. In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures.

    PubMed

    Byrne, Conor; Brennan, Barry; McCoy, Anthony P; Bogan, Justin; Brady, Anita; Hughes, Greg

    2016-02-01

    Copper/SiO2/Si metal-oxide-semiconductor (MOS) devices both with and without a MnSiO3 barrier layer at the Cu/SiO2 interface have been fabricated in an ultrahigh vacuum X-ray photoelectron spectroscopy (XPS) system, which allows interface chemical characterization of the barrier formation process to be directly correlated with electrical testing of barrier layer effectiveness. Capacitance voltage (CV) analysis, before and after tube furnace anneals of the fabricated MOS structures showed that the presence of the MnSiO3 barrier layer significantly improved electric stability of the device structures. Evidence of improved adhesion of the deposited copper layer to the MnSiO3 surface compared to the clean SiO2 surface was apparent both from tape tests and while probing the samples during electrical testing. Secondary ion mass spectroscopy (SIMS) depth profiling measurements of the MOS test structures reveal distinct differences of copper diffusion into the SiO2 dielectric layers following the thermal anneal depending on the presence of the MnSiO3 barrier layer. PMID:26732185

  16. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

    PubMed Central

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-01-01

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of −2 V and drain bias of −15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm2/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG. PMID:27021054

  17. Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

    NASA Astrophysics Data System (ADS)

    Suzuki, Rena; Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang-Hyeon; Hoshii, Takuya; Maeda, Tatsuro; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi

    2012-10-01

    We have studied the impact of atomic-layer-deposition (ALD) temperature on the HfO2/InGaAs metal-oxide-semiconductor (MOS) interface with a comparison to the Al2O3/InGaAs interface. It is found that the interface properties such as the C-V characteristics and the interface trap density (Dit) and the interface structure of HfO2/InGaAs have strong dependence on the ALD temperature, while the Al2O3/InGaAs interfaces hardly depend on it. As a result, we have achieved the HfO2/InGaAs interfaces with low Dit comparable to that in the Al2O3/InGaAs interface by lowering the ALD temperature down to 200 °C or less. Also, we have found that As2O3 and Ga2O3 formed at the interface during ALD increase with a decrease in the ALD temperature. Combined with the ALD temperature dependence of the electrical characteristics, the better C-V characteristics and the lower Dit obtained at the lower ALD temperature can be explained by the As2O3 and Ga2O3 passivation of the HfO2/InGaAs interfaces, which is consistent with a reported theoretical result on the effective passivation of III-V MOS interfaces by trivalent oxides.

  18. Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Chen, Liu; Yuming, Zhang; Yimen, Zhang; Hongliang, Lü; Bin, Lu

    2015-12-01

    We have investigated the temperature dependent interfacial and electrical characteristics of p-GaAs metal-oxide-semiconductor capacitors during atomic layer deposition (ALD) and annealing of HfO2 using the tetrakis (ethylmethyl) amino hafnium precursor. The leakage current decreases with the increase of the ALD temperature and the lowest current is obtained at 300 °C as a result of the Frenkel-Poole conduction induced leakage current being greatly weakened by the reduction of interfacial oxides at the higher temperature. Post deposition annealing (PDA) at 500 °C after ALD at 300 °C leads to the lowest leakage current compared with other annealing temperatures. A pronounced reduction in As oxides during PDA at 500 °C has been observed using X-ray photoelectron spectroscopy at the interface resulting in a proportional increase in Ga2O3. The increment of Ga2O3 after PDA depends on the amount of residual As oxides after ALD. Thus, the ALD temperature plays an important role in determining the high-k/GaAs interface condition. Meanwhile, an optimum PDA temperature is essential for obtaining good dielectric properties. Project supported by the Advance Research Project of China (No. 5130803XXXX) and the National Natural Science Foundation of China (No. 61176070).

  19. Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices

    SciTech Connect

    Akhavan, N. D. Jolley, G.; Umana-Membreno, G. A.; Antoszewski, J.; Faraone, L.

    2014-08-28

    Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs based on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10 nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10 nm regime.

  20. Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high- k LaTiON gate dielectric

    NASA Astrophysics Data System (ADS)

    Xu, H. X.; Xu, J. P.; Li, C. X.; Chan, C. L.; Lai, P. T.

    2010-06-01

    Ge Metal-Oxide-Semiconductor (MOS) capacitors with LaON gate dielectric incorporating different Ti contents are fabricated and their electrical properties are measured and compared. It is found that Ti incorporation can increase the dielectric permittivity, and the higher the Ti content, the larger is the permittivity. However, the interfacial and gate-leakage properties become poorer as the Ti content increases. Therefore, optimization of Ti content is important in order to obtain a good trade-off among the electrical properties of the device. For the studied range of the Ti/La2O3 ratio, a suitable Ti/La2O3 ratio of 14.7% results in a high relative permittivity of 24.6, low interface-state density of 3.1×1011 eV-1 cm-2, and relatively low gate-leakage current density of 2.0×10-3 A cm-2 at a gate voltage of 1 V.

  1. A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Chiang, Te-Kuang; Chen, Mei-Li

    2007-06-01

    Based on resultant solution of a two-dimensional (2D) Poisson’s equation in the silicon region, a new analytical model for short-channel fully depleted, symmetrical dual-material double-gate (SDMDG) metal-oxide-semiconductor field effect transistors (MOSFETs) has been developed. The SDMDG MOSFET exhibits significantly reduced short-channel effects (SCEs) when compared with the symmetrical double-gate (SDG) MOSFET due to the step potential profile at the interface between different gate materials. It is found that the threshold voltage roll-off can be effectively reduced using both the thin Si film and thin gate oxide. A considerable portion of the large workfunction of metal gate 1 (M1) when laterally merged with the small workfunction of metal gate 2 (M2) can efficiently suppress drain-induced barrier lowering (DIBL) and maintain the low threshold voltage degradation. In this work, not only a precise 2D analytical model of the surface potential and threshold voltage is presented, but also the minimum surface potential in M1 of the shorter channel device that brings about subthreshold swing degradation for the SDMDG MOSFET is discussed. The new model is verified to be in good agreement with numerical simulation results over a wide range of device parameters.

  2. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    SciTech Connect

    Islam, Sk Masiul Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  3. Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO{sub 2} gate dielectrics

    SciTech Connect

    Samanta, Piyas; Huang, Heng-Sheng; Chen, Shuang-Yuan; Liu, Chuan-Hsi; Cheng, Li-Wei

    2014-02-21

    We present a detailed investigation on positive-bias temperature stress (PBTS) induced degradation of nitrided hafnium silicate (HfSiON)/SiO{sub 2} gate stack in n{sup +}-poly crystalline silicon (polySi) gate p-type metal-oxide-semiconductor (pMOS) devices. The measurement results indicate that gate dielectric degradation is a composite effect of electron trapping in as-fabricated as well as newly generated neutral traps, resulting a significant amount of stress-induced leakage current and generation of surface states at the Si/SiO{sub 2} interface. Although, a significant amount of interface states are created during PBTS, the threshold voltage (V{sub T}) instability of the HfSiON based pMOS devices is primarily caused by electron trapping and detrapping. It is also shown that PBTS creates both acceptor- and donor-like interface traps via different depassivation mechanisms of the Si{sub 3} ≡ SiH bonds at the Si/SiO{sub 2} interface in pMOS devices. However, the number of donor-like interface traps ΔN{sub it}{sup D} is significantly greater than that of acceptor-like interface traps ΔN{sup A}{sub it}, resulting the PBTS induced net interface traps as donor-like.

  4. Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee

    2006-05-01

    A working p-type SiGe double-quantum-well metal-oxide-semiconductor field effect transistor (DQW-pMOSFETs) has been fabricated and characterized. The upper quantum well with 15%-Ge acts as an induced-carrier buffer to slow holes into the Si surface channel and increases the number of high-mobility holes in the 30%-Ge well at the bottom under high gate voltage by improving carrier confinement. DQW devices with a thinner Si-spacer layer between the two SiGe quantum wells exhibit an improved effective hole mobility and wider gate voltage swings but also reduced 1/ f noise levels than Si-controlled pMOSFETs. The DQW has an enhanced carrier confinement compared to a single quantum-well (SQW) device; however, the degradation of mobility and transconductance observed in a sample DQW indicates that this poor transport mechanism may result from an additional hole scattering effect at the Si/SiGe interface.

  5. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-01

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al2O3 or HfO2 dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO2 based capacitors compared to Al2O3 based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  6. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor

    NASA Astrophysics Data System (ADS)

    Yang, Yuan; Gao, Yong; Gong, Peng-Liang

    2008-08-01

    A novel fully depleted air AlN silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOS-FET) is presented, which can eliminate the self-heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75 K higher than the atmosphere temperature, while the lattice temperature is just 4K higher than the atmosphere temperature resulting in less severe self-heating effect in air AlN SOI MOSFETs and AlN SOI MOSFETs. The on-state current of air AlN SOI MOSFETs is similar to the AlN SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The off-state current of AlN SOI is 6.7 times of normal SOI MOSFETs, while the counterpart of air AlN SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air AlN SOI MOSFETs with different drain voltage is much less than that of AlN SOI devices, when the drain voltage is biased at 0.8 V, this difference is 28mV, so the threshold voltage change induced by employing high thermal conductivity material is cured.

  7. Design and Analysis of Power Low-Temperature Polysilicon Lateral Double-Diffusion Metal Oxide Semiconductor Field Effect Transistors with Shielding-Trench Structure

    NASA Astrophysics Data System (ADS)

    Lin, Jyh-Ling; Lin, Cang-Ting

    2013-08-01

    A new polycrystalline silicon (poly-Si) lateral double-diffusion metal oxide semiconductor field-effect transistor power device combining super-lateral-growth technology and shielding-trench oxide structures (STO-LDMOSFET) is introduced. The trench oxide offers a platform for amorphous silicon lateral growth through excimer laser annealing; this not only enables stable control of the crystallization of poly-Si but also promotes the blocking ability of devices. The breakdown voltages of the manufactured devices with and without trench oxide are 460 and 387 V, respectively, increasing by approximately 73 V. The characteristics of poly-Si treated with an excimer laser were obtained by low-temperature poly-Si LDMOSFET (LTPS-LDMOSFET) measurement and simulation. Then, STO-LDMOSFETs were studied by simulation. The results showed that the STO-LDMOSFET with a 150 cm2 V-1 s-1 mobility had a breakdown voltage and a specific on-resistance of approximately 450 V and 16 Ω cm2, respectively, at a 40 µm drift region length.

  8. Quantum-Mechanical Simulation of Gate Tunneling Current in Accumulated n-Channel Metal-Oxide-Semiconductor Devices with n+-Polysilicon Gates

    NASA Astrophysics Data System (ADS)

    Iwata, Hideyuki; Matsuda, Toshihiro; Ohzone, Takashi

    2002-08-01

    The gate tunneling current in n+-polysilicon gate n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) in accumulation regime has been simulated quantum-mechanically. The two current components, due to hole tunneling from the accumulation layer on the p-silicon surface and due to electron tunneling from the accumulation layer on the n+-polysilicon gate, have been investigated for bulk and silicon-on-insulator (SOI) MOSFETs with various SOI layer thicknesses. For bulk MOSFETs, the electron current from the gate becomes much larger than the hole current from the silicon surface. On the other hand, as the SOI layer thickness (tSOI) decreases, the hole current increases, but the electron current decreases, and thus the hole current exceeds the electron current at a certain tSOI. The total gate current increases with decreasing tSOI (>2 nm). For extremely thin tSOI, the contribution of the electron current almost disappears. Moreover, the quantum-mechanical effects on the tunneling current in accumulated SOI MOSFETs have been discussed in detail.

  9. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    SciTech Connect

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  10. Oxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation

    SciTech Connect

    Valisheva, N. A. Aksenov, M. S.; Golyashov, V. A.; Levtsova, T. A.; Kovchavtsev, A. P.; Gutakovskii, A. K.; Tereshchenko, O. E.; Khandarkhaeva, S. E.; Kalinkin, A. V.; Prosvirin, I. P.; Bukhtiyarov, V. I.

    2014-10-20

    In this letter, we present structural, compositional, and electrical characteristics of anodic oxide layer-based metal-oxide-semiconductor (MOS) capacitors on n-type InAs(111)A, along with the effect of a thin fluorinated interfacial passivation layer. Electrochemical oxidation in acid electrolyte with addition of fluorine (NH{sub 4}F) led to the formation of oxygen free well-ordered wide gap fluorinated interfacial layer at InAs(111)A with the fixed charge (Q{sub fix}) and density of interface states (D{sub it}) in the range of (4–6) × 10{sup 10 }cm{sup −2} and (2–12) × 10{sup 10 }eV{sup −1 }cm{sup −2}, respectively. We found that MOS capacitors showed excellent capacitance-voltage characteristics with very small frequency dispersion (<1% and <15 mV). Fluorinated interfacial layer consists of crystalline isostructural compound with the InAs substrate, which remains intact with the atomic smoothness and sharpness that explain unpinned behavior of the Fermi level.

  11. Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

    SciTech Connect

    Liu, L. N.; Choi, H. W.; Lai, P. T.; Xu, J. P.

    2015-11-23

    GaAs metal-oxide-semiconductor capacitor with TaYON/LaTaON gate-oxide stack and fluorine-plasma treatment is fabricated and compared with its counterparts without the LaTaON passivation interlayer or the fluorine treatment. Experimental results show that the sample exhibits better characteristics: low interface-state density (8 × 10{sup 11 }cm{sup −2}/eV), small flatband voltage (0.69 V), good capacitance-voltage behavior, small frequency dispersion, and small gate leakage current (6.35 × 10{sup −6} A/cm{sup 2} at V{sub fb} + 1 V). These should be attributed to the suppressed growth of unstable Ga and As oxides on the GaAs surface during gate-oxide annealing by the LaTaON interlayer and fluorine incorporation, and the passivating effects of fluorine atoms on the acceptor-like interface and near-interface traps.

  12. Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

    SciTech Connect

    Vais, Abhitosh Martens, Koen; DeMeyer, Kristin; Lin, Han-Chung; Ivanov, Tsvetan; Collaert, Nadine; Thean, Aaron; Dou, Chunmeng; Xie, Qi; Maes, Jan; Tang, Fu; Givens, Michael; Raskin, Jean-Pierre

    2015-08-03

    This paper presents a detailed investigation of the temperature dependence of frequency dispersion observed in capacitance-voltage (C-V) measurements of III-V metal-oxide-semiconductor (MOS) devices. The dispersion in the accumulation region of the capacitance data is found to change from 4%–9% (per decade frequency) to ∼0% when the temperature is reduced from 300 K to 4 K in a wide range of MOS capacitors with different gate dielectrics and III-V substrates. We show that such significant temperature dependence of C-V frequency dispersion cannot be due to the temperature dependence of channel electrostatics, i.e., carrier density and surface potential. We also show that the temperature dependence of frequency dispersion, and hence, the capture/emission process of border traps can be modeled by a combination of tunneling and a “temperature-activated” process described by a non-radiative multi-phonon model, instead of a widely believed single-step elastic tunneling process.

  13. Characteristics and Modeling of a Nonplanar Nonrectangular Metal Oxide Semiconductor Field Effect Transistor for Charge Sensing in the Si Micro-Fluidic Channel

    NASA Astrophysics Data System (ADS)

    Lim, Geunbae; Kim, Dong-Sun; Lyu, Hong-Kun; Park, Hey-Jung; Shin, Jang-Kyoo; Choi, Pyung; Lee, Jong-Hyun; Lee, Minho

    2004-06-01

    In this work, a nonplanar, nonrectangular metal-oxide-semiconductor field effect transistor (MOSFET) with an asymmetrical channel structure for sensing charge in the Si micro-fluidic channel was fabricated, and the electrical characteristics of the fabricated three-dimensional (3-D) MOSFET were measured. The device was formed in the convex corner of a Si micro-fluidic channel using tetramethyl ammonium hydroxide (TMAH) anistropic etching solution, so that it would be suitable for combination with a micro-fluidic system. We approximated the nonplanar, nonrectangular 3-D MOSFET to a two-dimensional rectangular structure using the Schwartz-Christoffel transformation. The LEVEL1 device parameters of the 3-D MOSFET were extracted from the measured electrical device characteristics and were used in a simulation program with integrated circuit emphasis (SPICE) simulation. The measured and simulated results for the 3-D MOSFET were compared and found to show good agreement. We also investigated the feasibility of the proposed 3-D MOSFET as a charge sensor for detecting charged biomolecules.

  14. Fabrication of 3-Dimensional Structure of Metal Oxide Semiconductor Field Effect Transistor Embodied in the Convex Corner of the Silicon Micro-Fluidic Channel

    NASA Astrophysics Data System (ADS)

    Lim, Geunbae; Park, Chin-Sung; Lyu, Hong-Kun; Kim, Dong-Sun; Jeong, Yong-Taek; Park, Hey-Jung; Kim, Hyoung Sik; Shin, Jang-Kyoo; Choi, Pyung; Lee, Jong-Hyun

    2003-06-01

    As micro-fluidic systems and biochemical detection systems are scaled to smaller dimensions, the realization of small and portable biochemical detection systems has become increasingly important. In this paper, we propose a 3-dimensional structure of a metal oxide semiconductor field-effect transistor(3-D MOSFET) using tetramethyl ammonium hydroxide (TMAH) anisotropic etching, which is a suitable device for combining with a micro-fluidic system. After fabricating a trapezoidal micro-fluidic channel, the 3-D MOSFET embodied in the convex corner of the micro-fluidic channel was fabricated. The length of the gate is about 20 μm and the width is about 9 μm. The depth and top width of the trapezoidal micro-fluidic channel are about 8 μm and 60 μm, respectively. The measured drain saturation current of the 3-D MOSFET was about -22 μA at VGS=-5 V and VDS=-5 V, and the device characteristics exhibit a typical MOSFET behavior. Moreover, a gold layer was used for the MOSFET’s gate metal to detect charged biochemical samples using the affinity between gold and thiol.

  15. Effects of substrate voltage on noise characteristics and hole lifetime in SOI metal-oxide-semiconductor field-effect transistor photon detector.

    PubMed

    Putranto, Dedy Septono Catur; Priambodo, Purnomo Sidi; Hartanto, Djoko; Du, Wei; Satoh, Hiroaki; Ono, Atsushi; Inokawa, Hiroshi

    2014-09-01

    Low-frequency noise and hole lifetime in silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) are analyzed, considering their use in photon detection based on single-hole counting. The noise becomes minimum at around the transition point between front- and back-channel operations when the substrate voltage is varied, and increases largely on both negative and positive sides of the substrate voltage showing peculiar Lorentzian (generation-recombination) noise spectra. Hole lifetime is evaluated by the analysis of drain current histogram at different substrate voltages. It is found that the peaks in the histogram corresponding to the larger number of stored holes become higher as the substrate bias becomes larger. This can be attributed to the prolonged lifetime caused by the higher electric field inside the body of SOI MOSFET. It can be concluded that, once the inversion channel is induced for detection of the photo-generated holes, the small absolute substrate bias is favorable for short lifetime and low noise, leading to high-speed operation. PMID:25321581

  16. Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.

    PubMed

    Farhadi, Rozita; Farhadi, Bita

    2014-01-01

    Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines. PMID:25763152

  17. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating.

    PubMed

    Liu, Xinke; Lu, Youming; Yu, Wenjie; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun; Chen, Shaojun; Tan, Leng Seow

    2015-01-01

    Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement. PMID:26364872

  18. Radiofrequency current source (RFCS) drive and decoupling technique for parallel transmit arrays using a high-power metal oxide semiconductor field-effect transistor (MOSFET).

    PubMed

    Lee, Wonje; Boskamp, Eddy; Grist, Thomas; Kurpad, Krishna

    2009-07-01

    A radiofrequency current source (RFCS) design using a high-power metal oxide semiconductor field effect transistor (MOSFET) that enables independent current control for parallel transmit applications is presented. The design of an RFCS integrated with a series tuned transmitting loop and its associated control circuitry is described. The current source is operated in a gated class AB push-pull configuration for linear operation at high efficiency. The pulsed RF current amplitude driven into the low impedance transmitting loop was found to be relatively insensitive to the various loaded loop impedances ranging from 0.4 to 10.3 ohms, confirming current mode operation. The suppression of current induced by a neighboring loop was quantified as a function of center-to-center loop distance, and was measured to be 17 dB for nonoverlapping, adjacent loops. Deterministic manipulation of the B(1) field pattern was demonstrated by the independent control of RF phase and amplitude in a head-sized two-channel volume transmit array. It was found that a high-voltage rated RF power MOSFET with a minimum load resistance, exhibits current source behavior, which aids in transmit array design. PMID:19353658

  19. Characterization of high-sensitivity metal oxide semiconductor field effect transistor dosimeters system and LiF:Mg,Cu,P thermoluminescence dosimeters for use in diagnostic radiology.

    PubMed

    Dong, S L; Chu, T C; Lan, G Y; Wu, T H; Lin, Y C; Lee, J S

    2002-12-01

    Monitoring radiation exposure during diagnostic radiographic procedures has recently become an area of interest. In recent years, the LiF:Mg,Cu,P thermoluminescence dosimeter (TLD-100H) and the highly sensitive metal oxide semiconductor field effect transistor (MOSFET) dosimeter were introduced as good candidates for entrance skin dose measurements in diagnostic radiology. In the present study, the TLD-100H and the MOSFET dosimeters were evaluated for sensitivity, linearity, energy, angular dependence, and post-exposure response. Our results indicate that the TLD-100H dosimeter has excellent linearity within diagnostic energy ranges and its sensitivity variations were under 3% at tube potentials from 40Vp to 125kVp. Good linearity was also observed with the MOSFET dosimeter, but in low-dose regions the values are less reliable and were found to be a function of the tube potentials. Both dosimeters also presented predictable angular dependence in this study. Our findings suggest that the TLD-100H dosimeter is more appropriate for low-dose diagnostic procedures such as chest and skull projections. The MOSFET dosimeter system is valuable for entrance skin dose measurement with lumbar spine projections and certain fluoroscopic procedures. PMID:12406633

  20. Metal-Oxide-Semiconductor Field-Effect-Transistors Possessing Step Functional I-V Curves Caused by the Punch Through between Drain and Inversion Layer of the Gate

    NASA Astrophysics Data System (ADS)

    Karasawa, Shinji; Yamanouchi, Kazuhiko; Tachibana, Yukio

    1992-02-01

    Through measurements of an Al gate p-channel Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) with a gap between the gate and drain, the behavior of the minority carrier in the depletion layer is clarified. The turn-on drain voltage depends upon the length and the density of impurity on the punch-through area. That is, Vd{=}-4 V for Lgap{=}0.5 μm in 3˜5 Ω\\cdotcm n-Si wafer and Vd{=}-3 V for Lgap{=}2.0 μm in 120˜200 Ω\\cdotcm n-Si wafer. The abrupt step functional I-V curve is revealed under the condition of low gate voltage. There are surface effects by which the higher the gate voltage, the lower the turn-on voltage of the drain becomes. The hole mobility in the depletion layer made from lightly doped < 111> wafer abruptly decreases when the temperature is lowered to below 20 K and the turn-on voltage on the step function MOSFET increases remarkably at 4.2 K.

  1. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO{sub 2} by capacitance voltage measurement on inverted metal oxide semiconductor structure

    SciTech Connect

    Zhang, Tian Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-21

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO{sub 2}. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO{sub 2}/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 10{sup 18}–10{sup 19 }cm{sup −3} despite their high resistivity. The saturation of doping at about 1.4 × 10{sup 19 }cm{sup −3} and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10{sup −3} cm{sup 2}/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  2. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    NASA Astrophysics Data System (ADS)

    Liu, Hsi-Wen; Chang, Ting-Chang; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Kuan-Ju; Lu, Ying-Hsin; Lin, Chien-Yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-04-01

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  3. Interface state density of SiO2/p-type 4H-SiC ( 0001 ), ( 11 2 ¯ 0 ), ( 1 1 ¯ 00 ) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes

    NASA Astrophysics Data System (ADS)

    Kobayashi, Takuma; Nakazawa, Seiya; Okuda, Takafumi; Suda, Jun; Kimoto, Tsunenobu

    2016-04-01

    Interface properties of heavily Al-doped 4H-SiC ( 0001 ) (Si-face), ( 11 2 ¯ 0 ) (a-face), and ( 1 1 ¯ 00 ) (m-face) metal-oxide-semiconductor (MOS) structures were characterized from the low-temperature gate characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs). From low-temperature subthreshold slopes, interface state density (Dit) at very shallow energy levels (ET) near the conduction band edge (Ec) was evaluated. We discovered that the Dit near Ec (Ec - 0.01 eV < ET < Ec) increases in MOS structures with higher Al doping density for every crystal face (Si-, a-, and m-face). Linear correlation is observed between the channel mobility and Dit near Ec, and we concluded that the mobility drop observed in heavily doped MOSFETs is mainly caused by the increase of Dit near Ec.

  4. Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

    SciTech Connect

    Ťapajna, M. Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Kuzmík, J.; Brunner, F.; Cho, E.-M.; Hashizume, T.

    2014-09-14

    Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from EC-0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement between experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about EC-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.

  5. Transmission line based short pulse generation circuits in a 0.13 μm complementary metal-oxide-semiconductor technology

    NASA Astrophysics Data System (ADS)

    Zou, Huan; Geng, Yongtao; Wang, Pingshan

    2011-02-01

    A few traditional pulse forming circuits are implemented and compared in a commercial 0.13 μm digital CMOS technology. Standard on-chip transmission lines are used as pulse forming lines (PFLs), while CMOS transistors are used as switches. The shortest output pulses of these circuits are analyzed and compared through Cadence Spectre simulations. All the CMOS circuits are fabricated in the commercial technology. Pulses of ˜170 ps durations and 120-400 mV amplitudes are obtained when the power supply is tuned from 1.2 to 2 V. The results show that these traditional PFL based circuits can be implemented in standard CMOS technology for high power short pulse generations. Furthermore, the PFL circuits significantly extend the short pulse generation capabilities of CMOS technologies.

  6. Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic

    NASA Astrophysics Data System (ADS)

    Udayakumar, K. R.; Boku, K.; Remack, K. A.; Rodriguez, J.; Summerfelt, S. R.; Celii, F. G.; Aggarwal, S.; Martin, J. S.; Hall, L.; Matz, L.; Rathsack, B.; McAdams, H.; Moise, T. S.

    2006-04-01

    High density embedded ferroelectric random access memory (FRAM), operable at 1.5 V, has been fabricated within a 130 nm, 5 lm Cu/fluorosilicate glass (FSG) logic process. To evaluate FRAM extendability to future process nodes, we have measured the bit distribution and reliability properties of arrays with varying individual capacitor areas ranging from 0.40 μm2 (130 nm node) to 0.15 μm2 (˜65 nm node). Wide signal margins, stable retention (≫10 years at 85 °C), and high endurance read/write cycling (≫1012 cycles) have been demonstrated, suggesting that reliable, high density FRAM can be realized.

  7. A third-order complementary metal-oxide-semiconductor sigma-delta modulator operating between 4.2 K and 300 K.

    PubMed

    Okcan, Burak; Gielen, Georges; Van Hoof, Chris

    2012-02-01

    This paper presents a third-order switched-capacitor sigma-delta modulator implemented in a standard 0.35-μm CMOS process. It operates from 300 K down to 4.2 K, achieving 70.8 dB signal-to-noise-plus-distortion ratio (SNDR) in a signal bandwidth of 5 kHz with a sampling frequency of 500 kHz at 300 K. The modulator utilizes an operational transconductance amplifier in its loop filter, whose architecture has been optimized in order to eliminate the cryogenic anomalies below the freeze-out temperature. At 4.2 K, the modulator achieves 67.7 dB SNDR consuming 21.17 μA current from a 3.3 V supply. PMID:22380114

  8. Increased efficiency of silicon light-emitting diodes in a standard 1.2-um silicon complementary metal oxide semiconductor technology

    NASA Astrophysics Data System (ADS)

    Snyman, Lukas W.; Aharoni, Herzl; du Plessis, Monuko; Gouws, Rudolph B.

    1998-07-01

    Scaled versions of a variety of silicon light-emitting diode elements (Si LEDs) have been realized using a standard 1.2- micrometers , double-polysilicon, double-metal, n-well CMOS fabrication process. The devices operated with a n+p junction biased in the avalanche breakdown mode and were realized by using standard features of the ORBIT FORESIGHT design rules. The elements emit optical radiation in a broad band in the 450- to 850-nm range. An emitted intensity of up to 7.1 (mu) W/cm2 has been obtained with 5 mA of current at an operating voltage of 18.5 V. Excellent uniformity in emission intensity of better than 1 percent variation was obtained over areas as large as 100 X 500 micrometers . A best power conversion efficiency of 8.7 X 10-8 and a quantum efficiency of 7.8 X 10-7 were measured. All of these values are about one order of magnitude better than previously reported values for Si LED avalanche devices. Coupling between the elements as well as electro- optical coupling between an element and an optical fiber was realized.

  9. Note: Multi-confocal fluorescence correlation spectroscopy in living cells using a complementary metal oxide semiconductor-single photon avalanche diode array

    NASA Astrophysics Data System (ADS)

    Kloster-Landsberg, M.; Tyndall, D.; Wang, I.; Walker, R.; Richardson, J.; Henderson, R.; Delon, A.

    2013-07-01

    Living cells are heterogeneous and rapidly changing biological samples. It is thus desirable to measure molecular concentration and dynamics in many locations at the same time. In this note, we present a multi-confocal setup capable of performing simultaneous fluorescence correlation spectroscopy measurements, by focusing the spots with a spatial light modulator and acquiring data with a monolithic 32 × 32 single-photon avalanche photodiode array. A post-processing method is proposed to correct cross-talk effects between neighboring spots. We demonstrate the applicability of our system by simultaneously measuring the diffusion of free enhanced Green Fluorescent Protein (eGFP) molecules at nine different points in living cells.

  10. A Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) for Deep Sub-0.1-μm Channel Regime

    NASA Astrophysics Data System (ADS)

    Yanagi, Shin-ichiro; Nakakubo, Atsushi; Omura, Yasuhisa

    2001-04-01

    Silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) offers a number of advantages over conventional bulk silicon transistors. In this paper, we present a new SOI device structure called a “partial-ground-plane” SOI MOSFET down to 50 nm channel length. This new device shows good suppression of short-channel effect together with a small subthreshold swing and has a good driveability with a low leakage current.

  11. Comparative analysis of breakdown mechanism in thin SiO2 oxide films in metal-oxide-semiconductor structures under the action of heavy charged particles and a pulsed voltage

    NASA Astrophysics Data System (ADS)

    Zinchenko, V. F.; Lavrent'ev, K. V.; Emel'yanov, V. V.; Vatuev, A. S.

    2016-02-01

    Regularities in the breakdown of thin SiO2 oxide films in metal-oxide-semiconductors structures of power field-effect transistors under the action of single heavy charged particles and a pulsed voltage are studied experimentally. Using a phenomenological approach, we carry out comparative analysis of physical mechanisms and energy criteria of the SiO2 breakdown in extreme conditions of excitation of the electron subsystem in the subpicosecond time range.

  12. Electron power loss in the (100) n channel of a Si metal-oxide-semiconductor field-effect transistor. II. Intersubband phonon scattering

    NASA Astrophysics Data System (ADS)

    Krowne, Clifford M.

    1983-05-01

    A simple matrix element is used to approximate electron-acoustic phonon scattering between different electron subbands i in the n channel of a (100) surface silicon MOSFET (metal-oxide-semiconductor field-effect transistor) device. This matrix element is used to determine the form of the electron power loss Pij in a i→j intersubband transition. P10 is calculated for TL =4.2 °K lattice temperature and electron temperatures Te between 4.4 °K and 18 °K when the electron inversion density Ninv =(3.76-10.0)×1011 cm-2 and an acceptor density NA =1014/cm3, and compared to Fang and Fowler's experimental data (which is put into the form of an experimental power loss Pexp). This is justified since the total power loss P due to intrasubband scattering as well as other Pij terms besides P10 is small. It is found that good to excellent fits between P10 and Pexp occur by adjusting the separation Δɛ10 between the lowest two circular subband edges. Δɛ10 is between 5.2 and 9.4 meV, and the electron-phonon deformation coupling constant D≊3.5 eV. The values of Δɛ10 obtained in such a manner roughly agree with Stern's theoretical self-consistent results. P10 is very sensitive to both Δɛ10 and to the effective mass for motion parallel to the surface m1 with the results implying that m1≊0.19m0 (m0=free electron rest mass). If one wants to find the contribution of intersubband scattering to P at higher TL, the formalism should still be applicable, although the approach could be much more complicated due to the addition of new Pij terms coming from both higher subbands and new scattering agents such as optical modes.

  13. A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors

    SciTech Connect

    Ettisserry, D. P. Goldsman, N.; Lelis, A.

    2014-03-14

    In this paper, we present a methodology for the identification and quantification of defects responsible for low channel mobility in 4H-Silicon Carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs). To achieve this, we use an algorithm based on 2D-device simulations of a power MOSFET, density functional simulations, and measurement data. Using physical modeling of carrier mobility and interface traps, we reproduce the experimental I-V characteristics of a 4H-SiC doubly implanted MOSFET through drift-diffusion simulation. We extract the position of Fermi level and the occupied trap density as a function of applied bias and temperature. Using these inputs, our algorithm estimates the number of possible trap types, their energy levels, and concentrations at 4H-SiC/SiO{sub 2} interface. Subsequently, we use density functional theory (DFT)-based ab initio simulations to identify the atomic make-up of defects causing these trap levels. We study silicon vacancy and carbon di-interstitial defects in the SiC side of the interface. Our algorithm indicates that the D{sub it} spectrum near the conduction band edge (3.25 eV) is composed of three trap types located at 2.8–2.85 eV, 3.05 eV, and 3.1–3.2 eV, and also calculates their densities. Based on DFT simulations, this work attributes the trap levels very close to the conduction band edge to the C di-interstitial defect.

  14. Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide

    DOE PAGESBeta

    Ahn, Shihyun; Kim, Byung -Jae; Lin, Yi -Hsuan; Ren, Fan; Pearton, Stephen J.; Yang, Gwangseok; Kim, Jihyun; Kravchenko, Ivan I.

    2016-07-26

    The effects of proton irradiation on the dc performance of InAlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with Al2O3 as the gate oxide were investigated. The InAlN/GaN MOSHEMTs were irradiated with doses ranging from 1×1013 to 1×1015cm–2 at a fixed energy of 5MeV. There was minimal damage induced in the two dimensional electron gas at the lowest irradiation dose with no measurable increase in sheet resistance, whereas a 9.7% increase of the sheet resistance was observed at the highest irradiation dose. By sharp contrast, all irradiation doses created more severe degradation in the Ohmic metal contacts, with increases of specificmore » contact resistance from 54% to 114% over the range of doses investigated. These resulted in source-drain current–voltage decreases ranging from 96 to 242 mA/mm over this dose range. The trap density determined from temperature dependent drain current subthreshold swing measurements increased from 1.6 × 1013 cm–2 V–1 for the reference MOSHEMTs to 6.7 × 1013 cm–2 V–1 for devices irradiated with the highest dose. In conclusion, the carrier removal rate was 1287 ± 64 cm–1, higher than the authors previously observed in AlGaN/GaN MOSHEMTs for the same proton energy and consistent with the lower average bond energy of the InAlN.« less

  15. Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metal-oxide-semiconductor capacitor

    NASA Astrophysics Data System (ADS)

    Kundu, Souvik; Halder, Nripendra N.; Biswas, D.; Banerji, P.; Shripathi, T.; Chakraborty, S.

    2012-08-01

    In this article, we report GaAs metal-oxide-semiconductor (MOS) capacitors with a metal organic chemical vapor deposited ultrathin (1.5 nm) pseudomorphic InP interface passivation layer (IPL) and a thin (5 nm) ZrO2 high-k dielectric. Reduction of the surface states on InP passivated GaAs surfaces was observed from the photoluminescence study. The x-ray photoelectron spectra confirmed the dramatic reduction of GaAs native oxides (Ga-O and As-O) from the interface of ZrO2 and p-GaAs, implying that the Fermi level at the high-k/GaAs interface can be unpinned with good interface quality. As a result, very low values of interface trap density (1.1 × 1011 cm-2 eV-1) and hysteresis (8.21 mV) were observed. The same was done for directly deposited ZrO2 on GaAs surface to understand the efficacy of InP interface passivation layer on GaAs MOS devices. A systematic capacitance-voltage and current density-voltage studies were performed on bothAl/ZrO2/InP/p-GaAs and Al/ZrO2/p-GaAs structures. It was found that insertion of 1.5 nm InP ultrathin layer in-between ZrO2 and GaAs improves the essential parameters of GaAs MOS such as dielectric constant, frequency dispersion, leakage current, etc. The dielectric reliability has been studied with constant voltage stressing. A very small flatband voltage shift with stress time was observed in InP passivated GaAs MOS capacitors.

  16. The Impacts of Contact Etch Stop Layer Thickness and Gate Height on Channel Stress in Strained N-Metal Oxide Semiconductor Field Effect Transistors.

    PubMed

    Lin, K C; Twu, M J; Deng, R H; Liu, C H

    2015-04-01

    The stress induced by strain in the channel of metal oxide semiconductor field effect transistors (MOSFET) is an effective method to boost the device performance. The geometric dimensions of spacer, gate height, and the contact etch stop layer (CESL) are important factors among the feasible booster. This study utilized the mismatch of the thermal expansion coefficients of stressors to simulate the process-induced stress in the N-MOSFET. Different temperatures are applied to different region of the device to generate the required strain. The analysis was performed by well-developed finite element package. The composite spacers with variant width of inserted silicon nitride (SiO2/SiN/SiO2, ONO) were proposed and their impacts on channel stress were compared. Two aspects of the impacts of those factors on the channel stress in the longitudinal direction for N-MOSFET with variant channel length were investigated. Firstly, the channel stresses of device without CESL for different gate heights were studied. Secondly, with stress applied to CESL and ONO spacers, the induced stresses in the channel were analyzed for long/short gate length. Two conclusions were drawn from the results of simulation. The N-MOSFET device without CESL shows that the stressed spacer alone generates compressive stress and the magnitude increases along with higher gate height. The channel stress becomes tensile for device with CESL and increases when the thickness of CESL and the height of gate increase, especially for device with shorter gate length. The gate height plays more significant role in inducing channel stress compared with the thickness of CESL. The channel stress can be used to quantify the mobility of electron/hole for strained MOSFET device. Therefore, with the guideline disclosed in this study, better device performance can be expected for N-MOSFET. PMID:26353480

  17. Reduced pressure chemical vapor deposition of Si/Si1-yCy heterostructures for n-type metal-oxide-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Hartmann, J. M.; Ernst, T.; Loup, V.; Ducroquet, F.; Rolland, G.; Lafond, D.; Holliger, P.; Laugier, F.; Semeria, M. N.; Deleonibus, S.

    2002-09-01

    We have grown by reduced pressure chemical vapor deposition Si/Si1-yCy/Si heterostructures for electrical purposes. The incorporation of substitutional carbon atoms into Si creates a carrier confinement in the channel region of metal-oxide-semiconductor (MOS) transistors. Indeed, tensile strain Si1-yCy layers present a type II band alignment with Si, with a conduction band offset of the order of 60 meV per at. % of substitutional carbon atoms. For small SiH3CH3 flows, all the incoming carbon atoms are incorporated into substitutional sites. At 600 degC, when the SiH3CH3 flow increases, the substitutional carbon concentration saturates at 1.12%. Meanwhile, the total carbon concentration CT still increases, following a simple law: CT/(1-CT)=0.88 * F(SiH3CH3)/F(SiH4). This is a sign that a growing number of C atoms incorporates into interstitial sites. The hydrogenated chemistry adopted does not enable one to achieve selectivity over SiO2-masked wafers, but does not however generate any adverse loading effect. We have integrated Si/Si1-yCy/Si stacks (which have been shown to be stable versus conventional gate oxidations and electrical activation anneals) into the channel region of ultrashort gate length (50 nm) nMOS transistors. Secondary ions mass spectrometry profiling has shown that C atoms segregate from the Si1-yCy layer into the Si cap and the SiO2 gate, but also that they block the diffusion paths of B coming from the antipunch through layer towards the gate, generating very retrograde doping profiles. The addition of C leads to a degradation of the electron mobility which seems to be linked to the high amount of C atoms into interstitial sites.

  18. Sample size requirements for estimating effective dose from computed tomography using solid-state metal-oxide-semiconductor field-effect transistor dosimetry

    SciTech Connect

    Trattner, Sigal; Cheng, Bin; Pieniazek, Radoslaw L.; Hoffmann, Udo; Douglas, Pamela S.; Einstein, Andrew J.

    2014-04-15

    Purpose: Effective dose (ED) is a widely used metric for comparing ionizing radiation burden between different imaging modalities, scanners, and scan protocols. In computed tomography (CT), ED can be estimated by performing scans on an anthropomorphic phantom in which metal-oxide-semiconductor field-effect transistor (MOSFET) solid-state dosimeters have been placed to enable organ dose measurements. Here a statistical framework is established to determine the sample size (number of scans) needed for estimating ED to a desired precision and confidence, for a particular scanner and scan protocol, subject to practical limitations. Methods: The statistical scheme involves solving equations which minimize the sample size required for estimating ED to desired precision and confidence. It is subject to a constrained variation of the estimated ED and solved using the Lagrange multiplier method. The scheme incorporates measurement variation introduced both by MOSFET calibration, and by variation in MOSFET readings between repeated CT scans. Sample size requirements are illustrated on cardiac, chest, and abdomen–pelvis CT scans performed on a 320-row scanner and chest CT performed on a 16-row scanner. Results: Sample sizes for estimating ED vary considerably between scanners and protocols. Sample size increases as the required precision or confidence is higher and also as the anticipated ED is lower. For example, for a helical chest protocol, for 95% confidence and 5% precision for the ED, 30 measurements are required on the 320-row scanner and 11 on the 16-row scanner when the anticipated ED is 4 mSv; these sample sizes are 5 and 2, respectively, when the anticipated ED is 10 mSv. Conclusions: Applying the suggested scheme, it was found that even at modest sample sizes, it is feasible to estimate ED with high precision and a high degree of confidence. As CT technology develops enabling ED to be lowered, more MOSFET measurements are needed to estimate ED with the same

  19. Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Qing-Wen, Song; Xiao-Yan, Tang; Yan-Jing, He; Guan-Nan, Tang; Yue-Hu, Wang; Yi-Meng, Zhang; Hui, Guo; Ren-Xu, Jia; Hong-Liang, Lv; Yi-Men, Zhang; Yu-Ming, Zhang

    2016-03-01

    In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFFETs) have been fabricated and characterized. A sandwich- (nitridation-oxidation-nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H-SiC/SiO2 were examined by the measurement of HF I-V, G-V, and C-V over a range of frequencies. The ideal C-V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H-SiC was reduced to 2 × 1011 eV-1·cm-2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field-effect mobility is about 32.5 cm2·V-1·s-1, and the maximum peak field-effect mobility of 38 cm2·V-1·s-1 was achieved in fabricated lateral 4H-SiC MOSFFETs. Projcet supported by the National Natural Science Foundation of China (Grant Nos. 61404098, 61176070, and 61274079), the Doctoral Fund of Ministry of Education of China (Grant Nos. 20110203110010 and 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

  20. A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Ettisserry, D. P.; Goldsman, N.; Lelis, A.

    2014-03-01

    In this paper, we present a methodology for the identification and quantification of defects responsible for low channel mobility in 4H-Silicon Carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs). To achieve this, we use an algorithm based on 2D-device simulations of a power MOSFET, density functional simulations, and measurement data. Using physical modeling of carrier mobility and interface traps, we reproduce the experimental I-V characteristics of a 4H-SiC doubly implanted MOSFET through drift-diffusion simulation. We extract the position of Fermi level and the occupied trap density as a function of applied bias and temperature. Using these inputs, our algorithm estimates the number of possible trap types, their energy levels, and concentrations at 4H-SiC/SiO2 interface. Subsequently, we use density functional theory (DFT)-based ab initio simulations to identify the atomic make-up of defects causing these trap levels. We study silicon vacancy and carbon di-interstitial defects in the SiC side of the interface. Our algorithm indicates that the Dit spectrum near the conduction band edge (3.25 eV) is composed of three trap types located at 2.8-2.85 eV, 3.05 eV, and 3.1-3.2 eV, and also calculates their densities. Based on DFT simulations, this work attributes the trap levels very close to the conduction band edge to the C di-interstitial defect.

  1. Sample size requirements for estimating effective dose from computed tomography using solid-state metal-oxide-semiconductor field-effect transistor dosimetry

    PubMed Central

    Trattner, Sigal; Cheng, Bin; Pieniazek, Radoslaw L.; Hoffmann, Udo; Douglas, Pamela S.; Einstein, Andrew J.

    2014-01-01

    Purpose: Effective dose (ED) is a widely used metric for comparing ionizing radiation burden between different imaging modalities, scanners, and scan protocols. In computed tomography (CT), ED can be estimated by performing scans on an anthropomorphic phantom in which metal-oxide-semiconductor field-effect transistor (MOSFET) solid-state dosimeters have been placed to enable organ dose measurements. Here a statistical framework is established to determine the sample size (number of scans) needed for estimating ED to a desired precision and confidence, for a particular scanner and scan protocol, subject to practical limitations. Methods: The statistical scheme involves solving equations which minimize the sample size required for estimating ED to desired precision and confidence. It is subject to a constrained variation of the estimated ED and solved using the Lagrange multiplier method. The scheme incorporates measurement variation introduced both by MOSFET calibration, and by variation in MOSFET readings between repeated CT scans. Sample size requirements are illustrated on cardiac, chest, and abdomen–pelvis CT scans performed on a 320-row scanner and chest CT performed on a 16-row scanner. Results: Sample sizes for estimating ED vary considerably between scanners and protocols. Sample size increases as the required precision or confidence is higher and also as the anticipated ED is lower. For example, for a helical chest protocol, for 95% confidence and 5% precision for the ED, 30 measurements are required on the 320-row scanner and 11 on the 16-row scanner when the anticipated ED is 4 mSv; these sample sizes are 5 and 2, respectively, when the anticipated ED is 10 mSv. Conclusions: Applying the suggested scheme, it was found that even at modest sample sizes, it is feasible to estimate ED with high precision and a high degree of confidence. As CT technology develops enabling ED to be lowered, more MOSFET measurements are needed to estimate ED with the same

  2. Robust ultrasensitive tunneling-FET biosensor for point-of-care diagnostics.

    PubMed

    Gao, Anran; Lu, Na; Wang, Yuelin; Li, Tie

    2016-01-01

    For point-of-care (POC) applications, robust, ultrasensitive, small, rapid, low-power, and low-cost sensors are highly desirable. Here, we present a novel biosensor based on a complementary metal oxide semiconductor (CMOS)-compatible silicon nanowire tunneling field-effect transistor (SiNW-TFET). They were fabricated "top-down" with a low-cost anisotropic self-stop etching technique. Notably, the SiNW-TFET device provided strong anti-interference capacity by applying the inherent ambipolarity via both pH and CYFRA21-1 sensing. This offered a more robust and portable general protocol. The specific label-free detection of CYFRA21-1 down to 0.5 fgml(-1) or ~12.5 aM was achieved using a highly responsive SiNW-TFET device with a minimum sub-threshold slope (SS) of 37 mVdec(-1). Furthermore, real-time measurements highlighted the ability to use clinically relevant samples such as serum. The developed high performance diagnostic system is expected to provide a generic platform for numerous POC applications. PMID:26932158

  3. Robust ultrasensitive tunneling-FET biosensor for point-of-care diagnostics

    NASA Astrophysics Data System (ADS)

    Gao, Anran; Lu, Na; Wang, Yuelin; Li, Tie

    2016-03-01

    For point-of-care (POC) applications, robust, ultrasensitive, small, rapid, low-power, and low-cost sensors are highly desirable. Here, we present a novel biosensor based on a complementary metal oxide semiconductor (CMOS)-compatible silicon nanowire tunneling field-effect transistor (SiNW-TFET). They were fabricated “top-down” with a low-cost anisotropic self-stop etching technique. Notably, the SiNW-TFET device provided strong anti-interference capacity by applying the inherent ambipolarity via both pH and CYFRA21-1 sensing. This offered a more robust and portable general protocol. The specific label-free detection of CYFRA21-1 down to 0.5 fgml-1 or ~12.5 aM was achieved using a highly responsive SiNW-TFET device with a minimum sub-threshold slope (SS) of 37 mVdec-1. Furthermore, real-time measurements highlighted the ability to use clinically relevant samples such as serum. The developed high performance diagnostic system is expected to provide a generic platform for numerous POC applications.

  4. Robust ultrasensitive tunneling-FET biosensor for point-of-care diagnostics

    PubMed Central

    Gao, Anran; Lu, Na; Wang, Yuelin; Li, Tie

    2016-01-01

    For point-of-care (POC) applications, robust, ultrasensitive, small, rapid, low-power, and low-cost sensors are highly desirable. Here, we present a novel biosensor based on a complementary metal oxide semiconductor (CMOS)-compatible silicon nanowire tunneling field-effect transistor (SiNW-TFET). They were fabricated “top-down” with a low-cost anisotropic self-stop etching technique. Notably, the SiNW-TFET device provided strong anti-interference capacity by applying the inherent ambipolarity via both pH and CYFRA21-1 sensing. This offered a more robust and portable general protocol. The specific label-free detection of CYFRA21-1 down to 0.5 fgml−1 or ~12.5 aM was achieved using a highly responsive SiNW-TFET device with a minimum sub-threshold slope (SS) of 37 mVdec−1. Furthermore, real-time measurements highlighted the ability to use clinically relevant samples such as serum. The developed high performance diagnostic system is expected to provide a generic platform for numerous POC applications. PMID:26932158

  5. Effective dose assessment in the maxillofacial region using thermoluminescent (TLD) and metal oxide semiconductor field-effect transistor (MOSFET) dosemeters: a comparative study

    PubMed Central

    Schulze, D; Wolff, J; Rottke, D

    2014-01-01

    Objectives: The objective of this study was to compare the performance of metal oxide semiconductor field-effect transistor (MOSFET) technology dosemeters with thermoluminescent dosemeters (TLDs) (TLD 100; Thermo Fisher Scientific, Waltham, MA) in the maxillofacial area. Methods: Organ and effective dose measurements were performed using 40 TLD and 20 MOSFET dosemeters that were alternately placed in 20 different locations in 1 anthropomorphic RANDO® head phantom (the Phantom Laboratory, Salem, NY). The phantom was exposed to four different CBCT default maxillofacial protocols using small (4 × 5 cm) to full face (20 × 17 cm) fields of view (FOVs). Results: The TLD effective doses ranged between 7.0 and 158.0 µSv and the MOSFET doses between 6.1 and 175.0 µSv. The MOSFET and TLD effective doses acquired using four different (FOV) protocols were as follows: face maxillofacial (FOV 20 × 17 cm) (MOSFET, 83.4 µSv; TLD, 87.6 µSv; −5%); teeth, upper jaw (FOV, 8.5 × 5.0 cm) (MOSFET, 6.1 µSv; TLD, 7.0 µSv; −14%); tooth, mandible and left molar (FOV, 4 × 5 cm) (MOSFET, 10.3 µSv; TLD, 12.3 µSv; −16%) and teeth, both jaws (FOV, 10 × 10 cm) (MOSFET, 175 µSv; TLD, 158 µSv; +11%). The largest variation in organ and effective dose was recorded in the small FOV protocols. Conclusions: Taking into account the uncertainties of both measurement methods and the results of the statistical analysis, the effective doses acquired using MOSFET dosemeters were found to be in good agreement with those obtained using TLD dosemeters. The MOSFET dosemeters constitute a feasible alternative for TLDs for the effective dose assessment of CBCT devices in the maxillofacial region. PMID:25143020

  6. Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

    NASA Astrophysics Data System (ADS)

    Liu, J. W.; Liao, M. Y.; Imura, M.; Oosato, H.; Watanabe, E.; Tanaka, A.; Iwai, H.; Koide, Y.

    2013-08-01

    In order to search a gate dielectric with high permittivity on hydrogenated-diamond (H-diamond), LaAlO3 films with thin Al2O3 buffer layers are fabricated on the H-diamond epilayers by sputtering-deposition (SD) and atomic layer deposition (ALD) techniques, respectively. Interfacial band configuration and electrical properties of the SD-LaAlO3/ALD-Al2O3/H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) with gate lengths of 10, 20, and 30 μm have been investigated. The valence and conduction band offsets of the SD-LaAlO3/ALD-Al2O3 structure are measured by X-ray photoelectron spectroscopy to be 1.1 ± 0.2 and 1.6 ± 0.2 eV, respectively. The valence band discontinuity between H-diamond and LaAlO3 is evaluated to be 4.0 ± 0.2 eV, showing that the MOS structure acts as the gate which controls a hole carrier density. The leakage current density of the SD-LaAlO3/ALD-Al2O3/H-diamond MOS diode is smaller than 10-8 A cm-2 at gate bias from -4 to 2 V. The capacitance-voltage curve in the depletion mode shows sharp dependence, small flat band voltage, and small hysteresis shift, which implies low positive and trapped charge densities. The MOSFETs show p-type channel and complete normally off characteristics with threshold voltages changing from -3.6 ± 0.1 to -5.0 ± 0.1 V dependent on the gate length. The drain current maximum and the extrinsic transconductance of the MOSFET with gate length of 10 μm are -7.5 mA mm-1 and 2.3 ± 0.1 mS mm-1, respectively. The enhancement mode SD-LaAlO3/ALD-Al2O3/H-diamond MOSFET is concluded to be suitable for the applications of high power and high frequency electrical devices.

  7. Impact of additional Pt and NiSi crystal orientation on channel stress induced by Ni silicide film in metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Mizuo, Mariko; Yamaguchi, Tadashi; Kudo, Shuichi; Hirose, Yukinori; Kimura, Hiroshi; Tsuchimoto, Jun-ichi; Hattori, Nobuyoshi

    2014-01-01

    The impact of additional Pt and Ni monosilicide (NiSi) crystal orientation on channel stress from Ni silicide in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been demonstrated. The channel stress generation mechanism can be explained by the NiSi crystal orientation. In pure Ni silicide films, the channel stress in the p-type substrate is much larger than that in the n-type one, since the NiSi a-axis parallel to the channel direction is strongly aligned on the p-type substrate compared with on the n-type one. On the other hand, in NiPt silicide films, the difference in the channel stress between the p- and n-type substrates is small, because the NiSi crystal orientation on the p-type substrate is similar to that on the n-type one. These results can be explained by the Pt segregation at the interface between the NiSi film and the Si surface. Segregated Pt atoms cause the NiSi b-axis to align normal to the Si(001) surface in the nucleation step owing to the expansion of the NiSi lattice spacing at the NiSi/Si interface. Furthermore, the Pt segregation mechanism is considered to be caused by the grain boundary diffusion in the Ni2Si film during NiSi formation. We confirmed that the grains of Ni2Si on the p-type substrate are smaller than those on the n-type one. The Ni2Si film on the p-type substrate has more grain boundary diffusion paths than that on the n-type one. Therefore, the amount of Pt segregation at the NiSi/Si interface on the p-type substrate is larger than that on the n-type one. Consequently, the number of NiSi grains with the b-axis aligned normal to the Si(001) in the p-type substrate is larger than that in the n-type one. As a result, the channel stress induced by NiPt silicide in PMOS is larger than that in NMOS. According to this mechanism, controlling the Pt concentration at the NiSi/Si interface is one of the key factors for channel stress engineering.

  8. Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

    NASA Astrophysics Data System (ADS)

    Lo, Wen-Hung; Chang, Ting-Chang; Tsai, Jyun-Yu; Dai, Chih-Hao; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung

    2012-04-01

    This letter studies the channel hot carrier stress (CHCS) behaviors on high dielectric constant insulator and metal gate HfO2/TiN p-channel metal-oxide-semiconductor field effect transistors. It can be found that the degradation is associated with electron trapping, resulting in Gm decrease and positive Vth shift. However, Vth under saturation region shows an insignificant degradation during stress. To compare that, the CHC-induced electron trapping induced DIBL is proposed to demonstrate the different behavior of Vth between linear and saturation region. The devices with different channel length are used to evidence the trapping-induced DIBL behavior.

  9. Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress

    NASA Astrophysics Data System (ADS)

    Zheng, Qi-Wen; Cui, Jiang-Wei; Yu, Xue-Feng; Guo, Qi; Zhou, Hang; Ren, Di-Yuan

    2014-12-01

    The larger back-gate voltage stress is applied on 130 nm partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors isolated by shallow trench isolation. The experimental results show that the back-gate sub-threshold hump of the device is eliminated by stress. This observed behavior is caused by the high electric field in the oxide near the bottom corner of the silicon island. The total ionizing dose hardness of devices with pre back-gate stress is enhanced by the interface states induced by stress.

  10. The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects

    NASA Astrophysics Data System (ADS)

    Luo, Jie-Xin; Chen, Jing; Chai, Zhan; Lü, Kai; He, Wei-Wei; Yang, Yan; Wang, Xi

    2014-12-01

    The impact of shallow trench isolation (STI) mechanical stress on the hysteresis effect in the output characteristics is measured in partially depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). We develop ID hysteresis, which is defined as the difference between ID versus VD forward sweep and reverse sweep. The fabricated devices show positive and negative peaks in ID hysteresis. The experimental results show that ID hysteresis declined as the STI mechanical stress increases. We also elaborate on the impact of STI mechanical stress on the ID hysteresis of PD SOI n-type MOSFETs.

  11. New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides

    NASA Astrophysics Data System (ADS)

    Lee, Hai-Ming; Liu, Cheng-Jye; Hsu, Chih-Wei; Liang, Mong-Song; King, Ya-Chin; Hsu, Charles Ching-Hsiang

    2001-03-01

    A new trap-assisted band-to-band tunneling (TAB) gate current model is proposed to describe the new observed band-to-band tunneling (BBT) induced gate current characteristics of p-channel metal-oxide-semiconductor field effect transistors (PMOSFET’s) with ultra-thin gate oxide. Based on this new TAB gate current model, the off-state gate currents of PMOSFET’s with various sub-3 nm gate oxides can be well characterized, while the conventional BBT current model is no longer applicable in this regime.

  12. Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

    NASA Astrophysics Data System (ADS)

    Ortiz, G.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A. J.; Pichler, P.; Cristiano, F.; Bedel-Pereira, E.; Mortet, V.

    2015-02-01

    Silicon carbide n-type metal-oxide-semiconductor field effect transistors (MOSFETs) with different p-body acceptor concentrations were characterized by Hall effect. Normally OFF MOSFETs with good transfer characteristics and low threshold voltage were obtained with a peak mobility of ˜145 cm2 V-1 s-1 for the lowest acceptor concentration. The results are explained in terms of an increase of Coulomb scattering centers when increasing the background doping. These scattering centers are associated to fixed oxide and trapped interface charges. Additionally, the observed mobility improvement is not related to a decrease of the interface states density as a function of background doping.

  13. BIOSENSORS

    EPA Science Inventory

    It has recently been proposed under the International Union of Pure and Applied Chemistry (IUPAC) Commission that biosensors be regarded as a subgroup of chemical sensors in which a biologically based mechanism is used for detection of the analyte. hemical sensors are defined und...

  14. SiO2/InP Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor

    NASA Astrophysics Data System (ADS)

    Shei, Shih-Chang; Su, Yan-Kuin; Hwang, Chih-Jen; Yokoyama, Meiso

    1995-02-01

    Silicon dioxide ( SiO2) films have been successfully deposited on indium phosphide (InP) substrate at low temperature and low pressure by direct photo-enhanced chemical vapor deposition (photo-CVD) under irradiation by a deuterium lamp. Silane ( SiH4) and oxygen ( O2) are used as reactant sources. The measurements of Fourier transform infrared (FTIR), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) show that the dominant components of the oxide are silicon and oxygen and the film is SiO2. Metal-oxide-semiconductor (MOS) capacitors show sharp interfaces with densities of states in the range of 1.2×1011 cm-2 eV-1. N-channel depletion-mode InP metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated with a transconductance of 63 mS/mm for 2 µ m gate length and an effective channel mobility as high as 1140 cm2 V-1 s-1. High-frequency S-parameter measurements of microwave characteristics for the devices indicate a current-gain cutoff frequency f t=6.3 GHz.

  15. Damage free Ar ion plasma surface treatment on In{sub 0.53}Ga{sub 0.47}As-on-silicon metal-oxide-semiconductor device

    SciTech Connect

    Koh, Donghyi; Shin, Seung Heon; Ahn, Jaehyun; Sonde, Sushant; Banerjee, Sanjay K.; Kwon, Hyuk-Min; Orzali, Tommaso; Kim, Tae-Woo; Kim, Dae-Hyun

    2015-11-02

    In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In{sub 0.53}Ga{sub 0.47}As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In{sub 0.53}Ga{sub 0.47}As. The XPS spectra of Ar treated In{sub 0.53}Ga{sub 0.47}As show a decrease in the AsO{sub x} and GaO{sub x} signal intensities, and the MOSCAPs show higher accumulation capacitance (C{sub acc}), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (D{sub it}), which thereby led to a reduction in the threshold voltage (V{sub th}) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.

  16. Label-Free Direct Detection of miRNAs with Poly-Silicon Nanowire Biosensors

    PubMed Central

    Gong, Changguo; Qi, Jiming; Xiao, Han; Jiang, Bin; Zhao, Yulan

    2015-01-01

    Background The diagnostic and prognostic value of microRNAs (miRNAs) in a variety of diseases is promising. The novel silicon nanowire (SiNW) biosensors have advantages in molecular detection because of their high sensitivity and fast response. In this study, poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) device was developed to achieve specific and ultrasensitive detection of miRNAs without labeling and amplification. Methods The poly-SiNW FET was fabricated by a top–down Complementary Metal Oxide Semiconductor (CMOS) wafer fabrication based technique. Single strand DNA (ssDNA) probe was bind to the surface of the poly-SiNW device which was silanated and aldehyde-modified. By comparing the difference of resistance value before and after ssDNA and miRNA hybridization, poly-SiNW device can be used to detect standard and real miRNA samples. Results Poly-SiNW device with different structures (different line width and different pitch) was applied to detect standard Let-7b sample with a detection limitation of 1 fM. One-base mismatched sequence could be distinguished meanwhile. Furthermore, these poly-SiNW arrays can detect snRNA U6 in total RNA samples extracted from HepG2 cells with a detection limitation of 0.2 μg/mL. In general, structures with pitch showed better results than those without pitch in detection of both Let-7b and snRNA U6. Moreover, structures with smaller pitch showed better detection efficacy. Conclusion Our findings suggest that poly-SiNW arrays could detect standard and real miRNA sample without labeling or amplification. Poly-SiNW biosensor device is promising for miRNA detection. PMID:26709827

  17. Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor

    NASA Astrophysics Data System (ADS)

    Lim, Han Jin; Kim, Youngkuk; Sang Jeon, In; Yeo, Jaehyun; Im, Badro; Hong, Soojin; Kim, Bong-Hyun; Nam, Seok-Woo; Kang, Ho-kyu; Jung, E. S.

    2013-06-01

    The positive bias temperature instability (PBTI) characteristics of the n-channel metal-oxide-semiconductor field emission transistors which had different kinds of high-k dielectric gate oxides were studied with the different stress-relaxation times. The degradation in the threshold voltage followed a power-law on the stress times. In particular, we found that their PBTI behaviors were closely related to the structural phase of the high-k dielectric gate oxide. In an amorphous gate oxide, the negative charges were trapped into the stress-induced defects of which energy level was so deep that the trapped charges were de-trapped slowly. Meanwhile, in a crystalline gate oxide, the negative charges were trapped mostly in the pre-existing defects in the crystallized films during early stage of the stress time and de-trapped quickly due to the shallow energy level of the defects.

  18. Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

    SciTech Connect

    Kao, Tsung-Hsien; Chang, Shoou-Jinn Fang, Yean-Kuen; Huang, Po-Chin; Wu, Chung-Yi; Wu, San-Lein

    2014-08-11

    In this study, the impact of aluminum ion implantation (Al I/I) on random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect-transistors (pMOSFETs) was investigated. The trap parameters of HK/MG pMOSFETs with Al I/I, such as trap energy level, capture time and emission time, activation energies for capture and emission, and trap location in the gate dielectric, were determined. The configuration coordinate diagram was also established. It was observed that the implanted Al could fill defects and form a thin Al{sub 2}O{sub 3} layer and thus increase the tunneling barrier height for holes. It was also observed that the trap position in the Al I/I samples was lower due to the Al I/I-induced dipole at the HfO{sub 2}/SiO{sub 2} interface.

  19. Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Aoki, T.; Fukuhara, N.; Osada, T.; Sazawa, H.; Hata, M.; Inoue, T.

    2014-07-01

    Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al2O3. This AlN passivation incorporated nitrogen at the Al2O3/GaAs interface, improving the capacitance-voltage (C-V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C-V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (Dit). The Dit was reduced over the entire GaAs band gap. In particular, these devices exhibited Dit around the midgap of less than 4 × 1012 cm-2eV-1, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

  20. High-performance GaAs-based metal-oxide-semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3 gate oxide and in situ AlN passivation by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2014-10-01

    GaAs-based metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with Al2O3 gate oxide and in situ AlN passivation were investigated. Passivation with AlN improved the quality of the MOS interfaces, leading to good control of the gate. The devices had a sufficiently small subthreshold swing of 84 mV decade-1 in the drain current vs gate voltage curves, as well as negligible frequency dispersions and nearly zero hysteresis in the gate capacitance vs gate voltage curves. A maximum drain current of 630 mA/mm and a peak effective mobility of 6720 cm2 V-1 s-1 at a sheet carrier density of 3 × 1012 cm-2 were achieved.

  1. Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD

    NASA Astrophysics Data System (ADS)

    Orzali, Tommaso; Vert, Alexey; Kim, Tae-Woo; Hung, P. Y.; Herman, Joshua L.; Vivekanand, Saikumar; Huang, Gensheng; Kelman, Max; Karim, Zia; Hill, Richard J. W.; Rao, Satyavolu S. Papa

    2015-10-01

    We report on the development of a metamorphic In0.53Ga0.47As-based heterostructure grown on 300 mm on-axis Si (001) wafers by metal-organic chemical vapor deposition (MOCVD), and the fabrication of a Metal-Oxide-Semiconductor Capacitor (MOSCAP) with C-V characteristics and interfacial trap density (Dit) values comparable to those of an equivalent structure grown on an InP substrate. A 1.15 μm thick GaAs/InP buffer with a defect density in the low 109 cm-2 range and a surface roughness rms value <2 nm was used to accommodate the large lattice mismatch between In0.53Ga0.47As and Si.

  2. In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Liu, X.; Yeluri, R.; Kim, J.; Lal, S.; Raman, A.; Lund, C.; Wienecke, S.; Lu, J.; Laurent, M.; Keller, S.; Mishra, U. K.

    2013-07-01

    The in-situ metalorganic chemical vapor deposition of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors (MOSCAPs) is reported. Al2O3 is grown using trimethylaluminum and O2 in the same reactor as GaN without breaking the vacuum. The in-situ MOSCAPs are subjected to a series of capacitance-voltage measurements combined with stress and ultraviolet-assisted techniques, and the results are discussed based on the presence of near-interface states with relatively fast and slow electron emission characteristics. The in-situ MOSCAPs with Al2O3 grown at 900 and 1000 °C exhibit very small hystereses and charge trappings as well as average near-interface state densities on the order of 1012 cm-2eV-1.

  3. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    SciTech Connect

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-10-06

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO{sub 2} interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  4. Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al{sub 2}O{sub 3}/Si using hard x-ray photoelectron spectroscopy

    SciTech Connect

    Church, J. R.; Opila, R. L.; Weiland, C.

    2015-04-27

    Hard X-ray photoelectron spectroscopy (HAXPES) analyses were carried out on metal-oxide-semiconductor (MOS) samples consisting of Si, thick and thin Al{sub 2}O{sub 3}, and a Ti metal cap. Using Si 1s and C 1s core levels for an energy reference, the Al 1s and Si 1s spectra were analyzed to reveal information about the location and roles of charges throughout the MOS layers. With different oxide thicknesses (2 nm and 23 nm), the depth sensitivity of HAXPES is exploited to probe different regions in the MOS structure. Post Ti deposition results indicated unexpected band alignment values between the thin and thick films, which are explained by the behavior of mobile charge within the Al{sub 2}O{sub 3} layer.

  5. Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

    NASA Astrophysics Data System (ADS)

    Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-04-01

    Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.

  6. Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the Si/SiO2 interface of metal-oxide-semiconductor devices

    NASA Astrophysics Data System (ADS)

    Przewlocki, Henryk M.; Massoud, Hisham Z.

    2002-08-01

    In this article, we report the results of a study of the effects of high-temperature stress annealing in nitrogen on the electrical properties of metal/oxide/semiconductor devices. In this study, we have experimentally characterized the dependence of the reduced effective contact-potential difference, the effective oxide charge (Neff), and the midgap interface trap density (Dit) on the annealing conditions in nitrogen. We have correlated such properties with the dependence of the index of refraction and oxide stress on the annealing conditions and oxide thickness in a companion article. We consider the contributions of the thermal-relaxation and nitrogen-incorporation processes in determining changes in the electrical properties with annealing time. This model description is consistent with other annealing studies carried out in argon where only the thermal-relaxation process is present.

  7. Comparison between chemical vapor deposited and physical vapor deposited WSi{sub 2} metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

    SciTech Connect

    Ong, B. S.; Pey, K. L.; Ong, C. Y.; Tan, C. S.; Antoniadis, D. A.; Fitzgerald, E. A.

    2011-05-02

    We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi{sub 2} metal gate process for In{sub 0.53}Ga{sub 0.47}As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al{sub 2}O{sub 3} as dielectric layer. The CVD-processed metal gate device with 6.5 nm Al{sub 2}O{sub 3} shows enhanced transistor performance such as drive current, maximum transconductance and maximum effective mobility. These values are relatively better than the PVD-processed counterpart device with improvement of 51.8%, 46.4%, and 47.8%, respectively. The improvement for the performance of the CVD-processed metal gate device is due to the fluorine passivation at the oxide/semiconductor interface and a nondestructive deposition process.

  8. Impact of SF{sub 6} plasma treatment on performance of TaN-HfO{sub 2}-InP metal-oxide-semiconductor field-effect transistor

    SciTech Connect

    Wang Yanzhen; Chen Yenting; Zhao Han; Xue Fei; Zhou Fei; Lee, Jack C.

    2011-01-24

    In this work, the experimental impact of SF{sub 6} plasma treatment on the performance of InP metal-oxide-semiconductor field-effect transistors is presented. S and F are incorporated into atomic layer deposited HfO{sub 2} via postgate SF{sub 6} plasma treatment. The decreased subthreshold swing, gate leakage (I{sub g}), and increased effective channel mobility ({mu}{sub eff}) indicate that better interface and bulk oxide quality have been achieved with SF{sub 6} plasma treatment due to the formation of stronger Hf-F bonds. Drive current (I{sub d}), transconductance (G{sub m}), and effective channel mobility ({mu}{sub eff}) are improved by 22.3%, 35%, and 35%, respectively, compared with those of control devices.

  9. Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force

    SciTech Connect

    Sakaike, Kohei; Akazawa, Muneki; Nakamura, Shogo; Higashi, Seiichiro

    2013-12-02

    A low-temperature local-layer technique for transferring a single-crystalline silicon (c-Si) film by using a meniscus force was proposed, and an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on polyethylene terephthalate (PET) substrate. It was demonstrated that it is possible to transfer and form c-Si films in the required shape at the required position on PET substrates at extremely low temperatures by utilizing a meniscus force. The proposed technique for layer transfer was applied for fabricating high-performance c-Si MOSFETs on a PET substrate. The fabricated MOSFET showed a high on/off ratio of more than 10{sup 8} and a high field-effect mobility of 609 cm{sup 2} V{sup −1} s{sup −1}.

  10. Performance enhancement of n-channel inversion type In{sub x}Ga{sub 1-x}As metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

    SciTech Connect

    Sonnet, A. M.; Hinkle, C. L.; Jivani, M. N.; Chapman, R. A.; Pollack, G. P.; Wallace, R. M.; Vogel, E. M.

    2008-09-22

    Significant enhancement in metal-oxide-semiconductor field effect transistor (MOSFET) transport characteristics is achieved with In{sub x}Ga{sub 1-x}As (x=0.53, x=0.20) channel material using ex situ plasma enhanced chemical vapor deposited amorphous Si layer. In{sub x}Ga{sub 1-x}As MOSFETs (L=2 {mu}m, V{sub gs}-V{sub t}=2.0 V) with Si interlayer show a maximum drain current of 290 mA/mm (x=0.53) and 2 {mu}A/mm (x=0.20), which are much higher compared to devices without a Si interlayer. However, charge pumping measurements show a lower average interface state density near the intrinsic Fermi level for devices without the silicon interlayer indicating that a reduction in the midgap interface state density is not responsible for the improved transport characteristics.

  11. Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

    NASA Astrophysics Data System (ADS)

    Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena; Roccaforte, Fabrizio

    2016-07-01

    This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in "gate-controlled-diode" configuration. The measurements revealed an anomalous non-steady conduction under negative bias (VG > |20 V|) through the SiO2/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (Ntrap ˜ 2 × 1011 cm-2).

  12. Anomalous negative bias temperature instability behavior in p-channel metal-oxide-semiconductor field-effect transistors with HfSiON /SiO2 gate stack

    NASA Astrophysics Data System (ADS)

    Chen, Shih-Chang; Chien, Chao-Hsin; Lou, Jen-Chung

    2007-06-01

    In this letter, the authors systematically investigated the behavior of negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with HfSiON /SiO2 gate stack. They found that typical linear extrapolation does not work well for the lifetime extraction at the normal operation conditions since the polarities of the net trapped charge inside the high-κ dielectrics are not the same at lower and higher stress voltage regimes. In other words, as ∣Vg∣<2.5V electron trapping dominated while hole trapping dominated when ∣Vg∣>2.5V. This phenomenon obviously contradicts the essence of the linear prediction in which the same degradation mechanism is assumed through the entire stress voltage range.

  13. High-performance, mechanically flexible, and vertically integrated 3D carbon nanotube and InGaZnO complementary circuits with a temperature sensor.

    PubMed

    Honda, Wataru; Harada, Shingo; Ishida, Shohei; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

    2015-08-26

    A vertically integrated inorganic-based flexible complementary metal-oxide-semiconductor (CMOS) inverter with a temperature sensor with a high inverter gain of ≈50 and a low power consumption of <7 nW mm(-1) is demonstrated using a layer-by-layer assembly process. In addition, the negligible influence of the mechanical flexibility on the performance of the CMOS inverter and the temperature dependence of the CMOS inverter characteristics are discussed. PMID:26177598

  14. Signal-to-noise ratio enhancement of silicon nanowires biosensor with rolling circle amplification.

    PubMed

    Gao, Anran; Zou, Nengli; Dai, Pengfei; Lu, Na; Li, Tie; Wang, Yuelin; Zhao, Jianlong; Mao, Hongju

    2013-09-11

    Herein, we describe a novel approach for rapid, label-free and specific DNA detection by applying rolling circle amplification (RCA) based on silicon nanowire field-effect transistor (SiNW-FET) for the first time. Highly responsive SiNWs were fabricated with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for hybrid method. The probe DNA was immobilized on the surface of SiNW, followed by sandwich hybridization with the perfectly matched target DNA and RCA primer that acted as a primer to hybridize the RCA template. The RCA reaction created a long single-stranded DNA (ssDNA) product and thus enhanced the electronic responses of SiNW significantly. The signal-to-noise ratio (SNR) as a figure-of-merit was analyzed to estimate the signal enhancement and possible detection limit. The nanosensor showed highly sensitive concentration-dependent conductance change in response to specific target DNA sequences. Because of the binding of an abundance of repeated sequences of RCA products, the SNR of >20 for 1 fM DNA detection was achieved, implying a detection floor of 50 aM. This RCA-based SiNW biosensor also discriminated perfectly matched target DNA from one-base mismatched DNA with high selectivity due to the substantially reduced nonspecific binding onto the SiNW surface through RCA. The combination of SiNW FET sensor with RCA will increase diagnostic capacity and the ability of laboratories to detect unexpected viruses, making it a potential tool for early diagnosis of gene-related diseases. PMID:23937430

  15. Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal-Oxide-Semiconductor Field-Effect Transistors and the Optimization Methodology

    NASA Astrophysics Data System (ADS)

    Eriguchi, Koji; Nakakubo, Yoshinori; Matsuda, Asahiko; Kamei, Masayuki; Takao, Yoshinori; Ono, Kouichi

    2011-08-01

    Physical damage induced by high-energy ion bombardment during plasma processing is characterized from the viewpoint of the relationship between surface-damaged layer (silicon loss) and defect site underneath the surface. Parameters for plasma-induced damage (PID), Si recess depth (dR) and residual (areal) defect density after wet-etch treatment (Ndam), are calculated on the basis of a modified range theory, and the trade-off relationship between dR and Ndam is presented. We also model their effects on device parameters such as off-state leakage (Ioff) and drain saturation current (Ion) of n-channel metal-oxide-semiconductor field effect transistors (MOSFETs). Based on the models, we clarify the relationship among plasma process parameters (ion energy and ion flux), dR, Ndam, Ioff, and Ion. Then we propose a methodology optimizing ion energy and ion flux under the constraints defined by device specifications Ioff and Ion, via dR and Ndam. This procedure is regarded as so-called optimization problems. The proposed methodology is applicable to optimizing plasma parameters that minimize degradation of MOSFET performance by PID.

  16. Zero Additional Process, Local Charge Trap, Embedded Flash Memory with Drain-Side Assisted Erase Scheme Using Minimum Channel Length/Width Standard Complemental Metal-Oxide-Semiconductor Single Transistor Cell

    NASA Astrophysics Data System (ADS)

    Miyaji, Kousuke; Shinozuka, Yasuhiro; Takeuchi, Ken

    2012-04-01

    This paper proposes for the first time the completely complemental metal-oxide-semiconductor (CMOS) compatible embedded flash memory with the small cell size as well as the lowest process cost. The single transistor cell with the minimum channel length and width realizes the ideal smallest cell. The non-volatile memory operation is realized with locally injected electrons at the drain-edge by the hot electron injection. This paper also proposes the novel forward-bias assisted erase. The proposed memory is experimentally demonstrated with the 65 nm standard CMOS process without additional process or mask. The cell size is 10F2 with the 65 nm CMOS logic design rule. The excellent reliability such as 100-times program/erase endurance, 10-year data retention and high immunity to the read/program/erase disturb is also experimentally demonstrated. The proposed cell is the ideal candidate for the code-storage embedded non-volatile memories in system-on-chip and microcontroller unit.

  17. Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors

    SciTech Connect

    Ettisserry, D. P. E-mail: neil@umd.edu; Goldsman, N. E-mail: neil@umd.edu; Akturk, A.; Lelis, A. J.

    2015-07-28

    We use hybrid-functional density functional theory-based Charge Transition Levels (CTLs) to study the electrical activity of near-interfacial oxygen vacancies located in the oxide side of 4H-Silicon Carbide (4H-SiC) power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). Based on the “amorphousness” of their local atomic environment, oxygen vacancies are shown to introduce their CTLs either within (permanently electrically active) or outside of (electrically inactive) the 4H-SiC bandgap. The “permanently electrically active” centers are likely to cause threshold voltage (V{sub th}) instability at room temperature. On the other hand, we show that the “electrically inactive” defects could be transformed into various “electrically active” configurations under simultaneous application of negative bias and high temperature stresses. Based on this observation, we present a model for plausible oxygen vacancy defects that could be responsible for the recently observed excessive worsening of V{sub th} instability in 4H-SiC power MOSFETs under high temperature-and-gate bias stress. This model could also explain the recent electrically detected magnetic resonance observations in 4H-SiC MOSFETs.

  18. Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Liu, X.; Kim, J.; Yeluri, R.; Lal, S.; Li, H.; Lu, J.; Keller, S.; Mazumder, B.; Speck, J. S.; Mishra, U. K.

    2013-10-01

    In situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors (MOSCAPs) were grown by metalorganic chemical vapor deposition and measured using capacitance-voltage techniques. The flat band voltage and hysteresis had a linear relationship with Al2O3 thickness, which indicates the presence of fixed charge and trap states that are located at or near the Al2O3/GaN interface. In addition, slow and fast near-interface states are distinguished according to their different electron emission characteristics. Atom probe tomography was used to characterize the in situ MOSCAPs to provide information on the Al/O stoichiometric ratios, Al2O3/GaN interface abruptnesses, and C concentrations. The in situ MOSCAPs with Al2O3 deposited at 700 °C exhibited an order of magnitude higher fast near-interface states density but a lower slow near-interface states density compared with those with Al2O3 deposited at 900 and 1000 °C. Furthermore, the 700 °C MOSCAPs exhibited a net negative fixed near-interface charge, whereas the 900 and 1000 °C MOSCAPs exhibited net positive fixed near-interface charges. The possible origins of various fixed charge and trap states are discussed in accordance with the experimental data and recently reported first-principals calculations.

  19. Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

    NASA Astrophysics Data System (ADS)

    Wang, L. S.; Xu, J. P.; Zhu, S. Y.; Huang, Y.; Lai, P. T.

    2013-08-01

    The interfacial and electrical properties of sputtered HfTiON on sulfur-passivated GaAs with or without TaON as interfacial passivation layer (IPL) are investigated. Experimental results show that the GaAs metal-oxide-semiconductor capacitor with HfTiON/TaON stacked gate dielectric annealed at 600 °C exhibits low interface-state density (1.0 × 1012 cm-2 eV-1), small gate leakage current (7.3 × 10-5 A cm-2 at Vg = Vfb + 1 V), small capacitance equivalent thickness (1.65 nm), and large equivalent dielectric constant (26.2). The involved mechanisms lie in the fact that the TaON IPL can effectively block the diffusions of Hf, Ti, and O towards GaAs surface and suppress the formation of interfacial As-As bonds, Ga-/As-oxides, thus unpinning the Femi level at the TaON/GaAs interface and improving the interface quality and electrical properties of the device.

  20. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

    NASA Astrophysics Data System (ADS)

    Higashiwaki, Masataka; Sasaki, Kohei; Kamimura, Takafumi; Hoi Wong, Man; Krishnamurthy, Daivasigamani; Kuramata, Akito; Masui, Takekazu; Yamakoshi, Shigenobu

    2013-09-01

    Single-crystal gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors were fabricated on a semi-insulating β-Ga2O3 (010) substrate. A Sn-doped n-Ga2O3 channel layer was grown by molecular-beam epitaxy. Si-ion implantation doping was performed to source and drain electrode regions for obtaining low-resistance ohmic contacts. An Al2O3 gate dielectric film formed by atomic layer deposition passivated the device surface and significantly reduced gate leakage. The device with a gate length of 2 μm showed effective gate modulation of the drain current with an extremely low off-state drain leakage of less than a few pA/mm, leading to a high drain current on/off ratio of over ten orders of magnitude. A three-terminal off-state breakdown voltage of 370 V was achieved. Stable transistor operation was sustained at temperatures up to 250 °C.

  1. Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

    NASA Astrophysics Data System (ADS)

    El Kazzi, M.; Czornomaz, L.; Rossel, C.; Gerl, C.; Caimi, D.; Siegwart, H.; Fompeyrine, J.; Marchiori, C.

    2012-02-01

    Metal-oxide-semiconductor (MOS) capacitors were fabricated by depositing composite 2 nm HfO2/1 nm Al2O3/1 nm a-Si gate stacks on p-In0.53Ga0.47As/InP (001) substrates. Thanks to the presence of the Al2O3 barrier layer, a minimum amount of the a-Si passivating layer is oxidized during the whole fabrication process. The capacitors exhibit excellent electrical characteristics with scaled equivalent oxide thickness (EOT) of 0.89 nm and mid-gap interface state density of 5 × 1011 eV-1 cm-2 upon post-metallization anneal up to 550 °C. Gate-first, self-aligned MOS field-effect-transistors were fabricated with a similar 5 nm HfO2/1 nm Al2O3/1 nm a-Si gate stack and raised source and drain (600 °C for 30 min). Owing to the excellent thermal stability of the stack, no degradation of the gate stack/semiconductor interface is observed, as demonstrated by the excellent capacitance vs voltage characteristics and the good mobility values (peak at 1030 cm2 V-1 s-1 and 740 cm2 V-1 s-1 at carrier density of 6.5 × 1012 cm-2) for a 1.3 nm EOT.

  2. Charge Pumping Profiling Technique for the Evaluation of Plasma-Charging-Enhanced Hot-Carrier Effect in Short-N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Chen, Shang-Jr; Chung, Steve Shao-Shiun; Lin, Horng-Chih

    2002-07-01

    Plasma etching of poly-silicon in a metal-oxide-semiconductor field-effect transistor (MOSFET) during the gate definition process induces edge damage at the gate-drain overlap edge. This edge damage will be further enhanced by the antenna effect and cause a more serious hot-carrier (HC) effect, particularly in short-channel devices. We call this phenomenon the plasma-charging-enhanced HC effect. In this paper, this plasma-charging-enhanced HC effect is evaluated by the charge pumping (CP) profiling technique, in which the enhanced damage at the gate-drain overlap gate oxide region can be identified. A three-phase plasma damage mechanism is then proposed to explain the observed effect. According to experimental results, it was shown that the interface traps generated at the gate-drain overlap edge are mainly attributed to the plasma-charging-enhanced HC effect. These interface traps (Nit) become the dominant mechanism of the drain current (ID) degradation, which increases with a reducing channel length (L). Again, the enhanced HC-effect-induced-degradation will dominate the device reliability under long-term operations.

  3. Direct measurement and characterization of n+ superhalo implants in a 120 nm gate-length Si metal-oxide-semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy

    NASA Astrophysics Data System (ADS)

    Rosenthal, P. A.; Taur, Y.; Yu, E. T.

    2002-11-01

    We have directly measured nanoscale electronic features associated with a 120 nm physical gate length p-channel silicon metal-oxide-semiconductor field-effect transistor device structure including n+ superhalo implants using cross-sectional scanning capacitance microscopy (SCM). A dc bias-dependent voltage series of SCM images representing nine bias conditions from 2 to -2 V in 0.5 V steps was obtained. The SCM contrast observed varies with the ac and dc bias applied to the sample and allows delineation of the device features, including the p+ source and drain contacts, p+ source and drain extensions, p+ polycrystalline silicon gate, electrical p-n junction, n-well, and n+ superhalo implants. It is demonstrated that the superhalo implant features are imaged only under specific SCM bias conditions. Detailed analysis of the resulting SCM contrast indicates an apparent channel length of 73±11 nm, and reveals clear asymmetry in the individual lobes of the n+ superhalo implant features.

  4. Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

    SciTech Connect

    Aoki, T. Fukuhara, N.; Osada, T.; Sazawa, H.; Hata, M.; Inoue, T.

    2014-07-21

    Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap of less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

  5. Measurement of n-type Dry Thermally Oxidized 6H-SiC Metal-oxide Semiconductor Diodes by Quasistatic and High-Frequency Capacitance Versus Voltage and Capacitance Transient Techniques

    NASA Technical Reports Server (NTRS)

    Neudeck, P.; Kang, S.; Petit, J.; Tabib-Azar, M.

    1994-01-01

    Dry-oxidized n-type 6H-SiC metal-oxide-semiconductor capacitors are investigated using quasistatic capacitance versus voltage (C-V), high-frequency C-V, and pulsed high-frequency capacitance transient (C-t) analysis over the temperature range from 297 to 573 K. The quasistatic C - V characteristics presented are the first reported for 6H-SiC MOS capacitors, and exhibit startling nonidealities due to nonequilibrium conditions that arise from the fact that the recombination/generation process in 6H-SiC is extraordinarily slow even at the highest measurement temperature employed. The high-frequency dark C-V characteristics all showed deep depletion with no observable hysteresis. The recovery of the high-frequency capacitance from deep depletion to inversion was used to characterize the minority-carrier generation process as a function of temperature. Zerbst analysis conducted on the resulting C-t transients, which were longer than 1000 s at 573 K, showed a generation lifetime thermal activation energy of 0.49 eV.

  6. Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance

    NASA Astrophysics Data System (ADS)

    Yu-Ru, Wang; Yi-He, Liu; Zhao-Jiang, Lin; Dong, Fang; Cheng-Zhou, Li; Ming, Qiao; Bo, Zhang

    2016-02-01

    An analytical model for a novel triple reduced surface field (RESURF) silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) field effect transistor with n-type top (N-top) layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional (2D) Poisson’s equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage (BV) is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer (Qntop) is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results, showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer. Project supported by the National Natural Science Foundation of China (Grant No. 61376080), the Natural Science Foundation of Guangdong Province, China (Grant No. 2014A030313736), and the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2013J030).

  7. Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Ettisserry, D. P.; Goldsman, N.; Akturk, A.; Lelis, A. J.

    2015-07-01

    We use hybrid-functional density functional theory-based Charge Transition Levels (CTLs) to study the electrical activity of near-interfacial oxygen vacancies located in the oxide side of 4H-Silicon Carbide (4H-SiC) power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). Based on the "amorphousness" of their local atomic environment, oxygen vacancies are shown to introduce their CTLs either within (permanently electrically active) or outside of (electrically inactive) the 4H-SiC bandgap. The "permanently electrically active" centers are likely to cause threshold voltage (Vth) instability at room temperature. On the other hand, we show that the "electrically inactive" defects could be transformed into various "electrically active" configurations under simultaneous application of negative bias and high temperature stresses. Based on this observation, we present a model for plausible oxygen vacancy defects that could be responsible for the recently observed excessive worsening of Vth instability in 4H-SiC power MOSFETs under high temperature-and-gate bias stress. This model could also explain the recent electrically detected magnetic resonance observations in 4H-SiC MOSFETs.

  8. Enhanced two dimensional electron gas transport characteristics in Al{sub 2}O{sub 3}/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    SciTech Connect

    Freedsman, J. J. Watanabe, A.; Urayama, Y.; Egawa, T.

    2015-09-07

    The authors report on Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al{sub 2}O{sub 3} as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

  9. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system

    NASA Astrophysics Data System (ADS)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-01

    This paper presents a compressive study on the fabrication and optimization of GaAs metal-oxide-semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal-organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance-voltage (C-V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm-2 eV-1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  10. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2

    NASA Astrophysics Data System (ADS)

    Lin, T. D.; Chang, W. H.; Chu, R. L.; Chang, Y. C.; Chang, Y. H.; Lee, M. Y.; Hong, P. F.; Chen, Min-Cheng; Kwo, J.; Hong, M.

    2013-12-01

    Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors (MOSFETs) have been fabricated using the gate dielectrics of in-situ directly atomic-layer-deposited (ALD) HfO2 followed by ALD-Al2O3. There were no surface pretreatments and no interfacial passivation/barrier layers prior to the ALD. TiN/Al2O3 (4 nm)/HfO2 (1 nm)/In0.53Ga0.47As/InP MOS capacitors exhibited well-behaved capacitance-voltage characteristics with true inversion behavior, low leakage current densities of ˜10-8 A/cm2 at ±1 MV/cm, and thermodynamic stability at high temperatures. Al2O3 (3 nm)/HfO2 (1 nm)/In0.53Ga0.47As MOSFETs of 1 μm gate length, with 700 °C-800 °C rapid thermal annealing in source/drain activation, have exhibited high extrinsic drain current (ID) of 1.5 mA/μm, transconductance (Gm) of 0.84 mS/μm, ION/IOFF of ˜104, low sub-threshold swing of 103 mV/decade, and field-effect electron mobility of 1100 cm2/V . s. The devices have also achieved very high intrinsic ID and Gm of 2 mA/μm and 1.2 mS/μm, respectively.

  11. Hole injection and dielectric breakdown in 6H-SiC and 4H-SiC metal-oxide-semiconductor structures during substrate electron injection via Fowler-Nordheim tunneling

    NASA Astrophysics Data System (ADS)

    Samanta, Piyas; Mandal, Krishna C.

    2015-12-01

    Hole injection into silicon dioxide (SiO2) films (8-40 nm thick) is investigated for the first time during substrate electron injection via Fowler-Nordheim (FN) tunneling in n-type 4H- and 6H-SiC (silicon carbide) based metal-oxide-semiconductor (MOS) structures at a wide range of temperatures (T) between 298 and 598 K and oxide electric fields Eox from 6 to 10 MV/cm. Holes are generated in heavily doped n-type polycrystalline silicon (n+ -polySi) gate serving as the anode as well as in the bulk silicon dioxide (SiO2) film via hot-electron initiated band-to-band ionization (BTBI). In absence of oxide trapped charges, it is shown that at a given temperature, the hole injection rates from either of the above two mechanisms are higher in n-4H-SiC MOS devices than those in n-6H-SiC MOS structures when compared at a given Eox and SiO2 thickness (tox). On the other hand, relative to n-4H-SiC devices, n-6H-SiC structures exhibit higher hole injection rates for a given tox during substrate electron injection at a given FN current density je,FN throughout the temperature range studied here. These two observations clearly reveal that the substrate material (n-6H-SiC and n-4H-SiC) dependencies on time-to-breakdown (tBD) or injected charge (electron) to breakdown (QBD) of the SiO2 film depend on the mode of FN injections (constant field/voltage and current) from the substrate which is further verified from the rigorous device simulation as well.

  12. Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography

    SciTech Connect

    Han, Bin Takamizawa, Hisashi Shimizu, Yasuo; Inoue, Koji; Nagai, Yasuyoshi; Yano, Fumiko; Kunimune, Yorinobu; Inoue, Masao; Nishida, Akio

    2015-07-13

    The dopant (P and B) diffusion path in n- and p-types polycrystalline-Si gates of trench-type three-dimensional (3D) metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated using atom probe tomography, based on the annealing time dependence of the dopant distribution at 900 °C. Remarkable differences were observed between P and B diffusion behavior. In the initial stage of diffusion, P atoms diffuse into deeper regions from the implanted region along grain boundaries in the n-type polycrystalline-Si gate. With longer annealing times, segregation of P on the grain boundaries was observed; however, few P atoms were observed within the large grains or on the gate/gate oxide interface distant from grain boundaries. These results indicate that P atoms diffuse along grain boundaries much faster than through the bulk or along the gate/gate oxide interface. On the other hand, in the p-type polycrystalline-Si gate, segregation of B was observed only at the initial stage of diffusion. After further annealing, the B atoms became uniformly distributed, and no clear segregation of B was observed. Therefore, B atoms diffuse not only along the grain boundary but also through the bulk. Furthermore, B atoms diffused deeper than P atoms along the grain boundaries under the same annealing conditions. This information on the diffusion behavior of P and B is essential for optimizing annealing conditions in order to control the P and B distributions in the polycrystalline-Si gates of trench-type 3D MOSFETs.

  13. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    SciTech Connect

    Szyszka, A. E-mail: adam.szyszka@pwr.wroc.pl; Haeberlen, M.; Storck, P.; Thapa, S. B.; Schroeder, T.

    2014-08-28

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  14. Reduction in the interface-states density of metal-oxide-semiconductor field-effect transistors fabricated on high-index Si (114) surfaces by using an external magnetic field

    SciTech Connect

    Molina, J. De La Hidalga, J.; Gutierrez, E.

    2014-08-14

    After fabrication of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices on high-index silicon (114) surfaces, their threshold voltage (Vth) and interface-states density (Dit) characteristics were measured under the influence of an externally applied magnetic field of B = 6 μT at room temperature. The electron flow of the MOSFET's channel presents high anisotropy on Si (114), and this effect is enhanced by using an external magnetic field B, applied parallel to the Si (114) surface but perpendicular to the electron flow direction. This special configuration results in the channel electrons experiencing a Lorentzian force which pushes the electrons closer to the Si (114)-SiO{sub 2} interface and therefore to the special morphology of the Si (114) surface. Interestingly, Dit evaluation of n-type MOSFETs fabricated on Si (114) surfaces shows that the Si (114)-SiO{sub 2} interface is of high quality so that Dit as low as ∼10{sup 10 }cm{sup −2}·eV{sup −1} are obtained for MOSFETs with channels aligned at specific orientations. Additionally, using both a small positive Vds ≤ 100 mV and B = 6 μT, the former Dit is reduced by 35% in MOSFETs whose channels are aligned parallel to row-like nanostructures formed atop Si (114) surfaces (channels having a 90° rotation), whereas Dit is increased by 25% in MOSFETs whose channels are aligned perpendicular to these nanostructures (channels having a 0° rotation). From these results, the special morphology of a high-index Si (114) plane having nanochannels on its surface opens the possibility to reduce the electron-trapping characteristics of MOSFET devices having deep-submicron features and operating at very high frequencies.

  15. Parasitic analysis and π-type Butterworth-Van Dyke model for complementary-metal-oxide-semiconductor Lamb wave resonator with accurate two-port Y-parameter characterizations.

    PubMed

    Wang, Yong; Goh, Wang Ling; Chai, Kevin T-C; Mu, Xiaojing; Hong, Yan; Kropelnicki, Piotr; Je, Minkyu

    2016-04-01

    The parasitic effects from electromechanical resonance, coupling, and substrate losses were collected to derive a new two-port equivalent-circuit model for Lamb wave resonators, especially for those fabricated on silicon technology. The proposed model is a hybrid π-type Butterworth-Van Dyke (PiBVD) model that accounts for the above mentioned parasitic effects which are commonly observed in Lamb-wave resonators. It is a combination of interdigital capacitor of both plate capacitance and fringe capacitance, interdigital resistance, Ohmic losses in substrate, and the acoustic motional behavior of typical Modified Butterworth-Van Dyke (MBVD) model. In the case studies presented in this paper using two-port Y-parameters, the PiBVD model fitted significantly better than the typical MBVD model, strengthening the capability on characterizing both magnitude and phase of either Y11 or Y21. The accurate modelling on two-port Y-parameters makes the PiBVD model beneficial in the characterization of Lamb-wave resonators, providing accurate simulation to Lamb-wave resonators and oscillators. PMID:27131699

  16. Parasitic analysis and π-type Butterworth-Van Dyke model for complementary-metal-oxide-semiconductor Lamb wave resonator with accurate two-port Y-parameter characterizations

    NASA Astrophysics Data System (ADS)

    Wang, Yong; Goh, Wang Ling; Chai, Kevin T.-C.; Mu, Xiaojing; Hong, Yan; Kropelnicki, Piotr; Je, Minkyu

    2016-04-01

    The parasitic effects from electromechanical resonance, coupling, and substrate losses were collected to derive a new two-port equivalent-circuit model for Lamb wave resonators, especially for those fabricated on silicon technology. The proposed model is a hybrid π-type Butterworth-Van Dyke (PiBVD) model that accounts for the above mentioned parasitic effects which are commonly observed in Lamb-wave resonators. It is a combination of interdigital capacitor of both plate capacitance and fringe capacitance, interdigital resistance, Ohmic losses in substrate, and the acoustic motional behavior of typical Modified Butterworth-Van Dyke (MBVD) model. In the case studies presented in this paper using two-port Y-parameters, the PiBVD model fitted significantly better than the typical MBVD model, strengthening the capability on characterizing both magnitude and phase of either Y11 or Y21. The accurate modelling on two-port Y-parameters makes the PiBVD model beneficial in the characterization of Lamb-wave resonators, providing accurate simulation to Lamb-wave resonators and oscillators.

  17. Gate-Leakage and Carrier-Transport Mechanisms for Plasma-PH3 Passivated InGaAs N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Azzah Bte Suleiman, Sumarlina; Lee, Sungjoo

    2012-02-01

    Gate leakage mechanism of the HfAlO plasma-PH3 passivated and non-passivated In0.53Ga0.47As N-channel metal-oxide-semiconductor field-effect transistors (N-MOSFETs) have been evaluated, in order to correlate the quality of the oxide deposited with the gate leakage mechanisms observed. At temperatures higher than 300 K, trap-free space charge limited conduction (SCLC) mechanism dominates the gate leakage of passivated device but non-passivated device consists of exponentially distributed SCLC mechanism at low electric field and Frenkel-Poole emission at high electric field. This Frenkel-Poole emission is associated with energy trap levels of ˜0.95 to 1.3 eV and is responsible for the increased gate leakage of non-passivated device. In addition, the electrical properties of the non-passivated device has also been extracted from the SCLC mechanism, with the average trap concentration of the shallow traps given as 1.3×1019 cm-3 and the average activation energy given as ˜0.22 to 0.27 eV. The existence of these defect levels in non-passivated device can be attributed to the interdiffusion of Ga/As/O elements across the HfAlO/In0.53Ga0.47As interface. On the other hand, passivated device does not contain Frenkel-Poole emission nor exponentially distributed SCLC mechanism, indicating a reduction in traps in the bulk of the oxide. In addition, the temperature dependent characteristics of off-state leakage have also been evaluated to provide insight into the off-state mechanism. The off-state leakage of both passivated and non-passivated device is determined by junction leakage, with Shockley-Read-Hall mechanism being its main contributor, and has activation energy of 0.38 eV for passivated device and 0.4 eV for non-passivated device. From Id∝T-0.37 observed for passivated device, in comparison to Id∝T-0.18 for non-passivated device, we have further confirmed the phonon scattering dominance of the passivated device at high electric field.

  18. Gate-Leakage and Carrier-Transport Mechanisms for Plasma-PH3 Passivated InGaAs N-Channel Metal--Oxide--Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Suleiman, Sumarlina Azzah Bte; Lee, Sungjoo

    2012-02-01

    Gate leakage mechanism of the HfAlO plasma-PH3 passivated and non-passivated In0.53Ga0.47As N-channel metal--oxide--semiconductor field-effect transistors (N-MOSFETs) have been evaluated, in order to correlate the quality of the oxide deposited with the gate leakage mechanisms observed. At temperatures higher than 300 K, trap-free space charge limited conduction (SCLC) mechanism dominates the gate leakage of passivated device but non-passivated device consists of exponentially distributed SCLC mechanism at low electric field and Frenkel--Poole emission at high electric field. This Frenkel--Poole emission is associated with energy trap levels of ˜0.95 to 1.3 eV and is responsible for the increased gate leakage of non-passivated device. In addition, the electrical properties of the non-passivated device has also been extracted from the SCLC mechanism, with the average trap concentration of the shallow traps given as 1.3× 1019 cm-3 and the average activation energy given as ˜0.22 to 0.27 eV. The existence of these defect levels in non-passivated device can be attributed to the interdiffusion of Ga/As/O elements across the HfAlO/In0.53Ga0.47As interface. On the other hand, passivated device does not contain Frenkel--Poole emission nor exponentially distributed SCLC mechanism, indicating a reduction in traps in the bulk of the oxide. In addition, the temperature dependent characteristics of off-state leakage have also been evaluated to provide insight into the off-state mechanism. The off-state leakage of both passivated and non-passivated device is determined by junction leakage, with Shockley--Read--Hall mechanism being its main contributor, and has activation energy of 0.38 eV for passivated device and 0.4 eV for non-passivated device. From Id\\propto T-0.37 observed for passivated device, in comparison to Id\\propto T-0.18 for non-passivated device, we have further confirmed the phonon scattering dominance of the passivated device at high electric field.

  19. Epitaxial GeSn film formed by solid phase epitaxy and its application to Yb{sub 2}O{sub 3}-gated GeSn metal-oxide-semiconductor capacitors with sub-nm equivalent oxide thickness

    SciTech Connect

    Lee, Ching-Wei; Wu, Yung-Hsien; Hsieh, Ching-Heng; Lin, Chia-Chun

    2014-11-17

    Through the technique of solid phase epitaxy (SPE), an epitaxial Ge{sub 0.955}Sn{sub 0.045} film was formed on a Ge substrate by depositing an amorphous GeSn film followed by a rapid thermal annealing at 550 °C. A process that uses a SiO{sub 2} capping layer on the amorphous GeSn film during SPE was proposed and it prevents Sn precipitation from occurring while maintaining a smooth surface due to the reduced surface mobility of Sn atoms. The high-quality epitaxial GeSn film was observed to have single crystal structure, uniform thickness and composition, and tiny surface roughness with root mean square of 0.56 nm. With a SnO{sub x}-free surface, Yb{sub 2}O{sub 3}-gated GeSn metal-oxide-semiconductor (MOS) capacitors with equivalent oxide thickness (EOT) of 0.55 nm were developed. A small amount of traps inside the Yb{sub 2}O{sub 3} was verified by negligible hysteresis in capacitance measurement. Low leakage current of 0.4 A/cm{sup 2} at gate bias of flatband voltage (V{sub FB})-1 V suggests the high quality of the gate dielectric. In addition, the feasibility of using Yb{sub 2}O{sub 3} to well passivate GeSn surface was also evidenced by the small interface trap density (D{sub it}) of 4.02 × 10{sup 11} eV{sup −1} cm{sup −2}, which can be attributed to smooth GeSn surface and Yb{sub 2}O{sub 3} valency passivation. Both leakage current and D{sub it} performance outperform other passivation techniques at sub-nm EOT regime. The proposed epitaxial GeSn film along with Yb{sub 2}O{sub 3} dielectric paves an alternative way to enable high-performance GeSn MOS devices.

  20. Interfacial band configuration and electrical properties of LaAlO{sub 3}/Al{sub 2}O{sub 3}/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

    SciTech Connect

    Liu, J. W.; Liao, M. Y.; Imura, M.; Oosato, H.; Watanabe, E.; Tanaka, A.; Iwai, H.; Koide, Y.

    2013-08-28

    In order to search a gate dielectric with high permittivity on hydrogenated-diamond (H-diamond), LaAlO{sub 3} films with thin Al{sub 2}O{sub 3} buffer layers are fabricated on the H-diamond epilayers by sputtering-deposition (SD) and atomic layer deposition (ALD) techniques, respectively. Interfacial band configuration and electrical properties of the SD-LaAlO{sub 3}/ALD-Al{sub 2}O{sub 3}/H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) with gate lengths of 10, 20, and 30 μm have been investigated. The valence and conduction band offsets of the SD-LaAlO{sub 3}/ALD-Al{sub 2}O{sub 3} structure are measured by X-ray photoelectron spectroscopy to be 1.1 ± 0.2 and 1.6 ± 0.2 eV, respectively. The valence band discontinuity between H-diamond and LaAlO{sub 3} is evaluated to be 4.0 ± 0.2 eV, showing that the MOS structure acts as the gate which controls a hole carrier density. The leakage current density of the SD-LaAlO{sub 3}/ALD-Al{sub 2}O{sub 3}/H-diamond MOS diode is smaller than 10{sup −8} A cm{sup −2} at gate bias from −4 to 2 V. The capacitance-voltage curve in the depletion mode shows sharp dependence, small flat band voltage, and small hysteresis shift, which implies low positive and trapped charge densities. The MOSFETs show p-type channel and complete normally off characteristics with threshold voltages changing from −3.6 ± 0.1 to −5.0 ± 0.1 V dependent on the gate length. The drain current maximum and the extrinsic transconductance of the MOSFET with gate length of 10 μm are −7.5 mA mm{sup −1} and 2.3 ± 0.1 mS mm{sup −1}, respectively. The enhancement mode SD-LaAlO{sub 3}/ALD-Al{sub 2}O{sub 3}/H-diamond MOSFET is concluded to be suitable for the applications of high power and high frequency electrical devices.

  1. Functionalization and Characterization of Nanomaterial Gated Field-Effect Transistor-Based Biosensors and the Design of a Multi-Analyte Implantable Biosensing Platform

    NASA Astrophysics Data System (ADS)

    Croce, Robert A., Jr.

    Advances in semiconductor research and complementary-metal-oxide semiconductor fabrication allow for the design and implementation of miniaturized metabolic monitoring systems, as well as advanced biosensor design. The first part of this dissertation will focus on the design and fabrication of nanomaterial (single-walled carbon nanotube and quantum dot) gated field-effect transistors configured as protein sensors. These novel device structures have been functionalized with single-stranded DNA aptamers, and have shown sensor operation towards the protein Thrombin. Such advanced transistor-based sensing schemes present considerable advantages over traditional sensing methodologies in view of its miniaturization, low cost, and facile fabrication, paving the way for the ultimate realization of a multi-analyte lab-on-chip. The second part of this dissertation focuses on the design and fabrication of a needle-implantable glucose sensing platform which is based solely on photovoltaic powering and optical communication. By employing these powering and communication schemes, this design negates the need for bulky on-chip RF-based transmitters and batteries in an effort to attain extreme miniaturization required for needle-implantable/extractable applications. A complete single-sensor system coupled with a miniaturized amperometric glucose sensor has been demonstrated to exhibit reality of this technology. Furthermore, an optical selection scheme of multiple potentiostats for four different analytes (glucose, lactate, O 2 and CO2) as well as the optical transmission of sensor data has been designed for multi-analyte applications. The last part of this dissertation will focus on the development of a computational model for the amperometric glucose sensors employed in the aforementioned implantable platform. This model has been applied to single-layer single-enzyme systems, as well as multi-layer (single enzyme) systems utilizing glucose flux limiting layer-by-layer assembled

  2. Surface engineering for enhancement of sensitivity in an underlap-FET biosensor by control of wettability.

    PubMed

    Kim, Jee-Yeon; Choi, Kyungyong; Moon, Dong-Il; Ahn, Jae-Hyuk; Park, Tae Jung; Lee, Sang Yup; Choi, Yang-Kyu

    2013-03-15

    The present work aims to improve the sensitivity of an electrical biosensor by simply changing a surface property of the passivation layer, which covers the background region except for the sensing site for electrical isolation among adjacent interconnection lines. The hydrophobic passivation layer dramatically enhances the sensitivity of the biosensor when compared with a hydrophilic passivation layer. A revamped metal oxide semiconductor field-effect transistor (MOSFET), which has a designed underlap region between a gate and a drain, is used as the electrical biosensor. A thin film of CYTOP(TM) and silicon nitride is used as the hydrophobic and hydrophilic passivation layers, respectively. The surface antigen and its specific antibody of the avian influenza virus were employed as the probe and target biomolecule, respectively, to confirm the enhanced sensitivity of the proposed biosensor. By using hydrophobic passivation, the limit of detection of the biosensor was improved up to 100-fold compared with that resulting from hydrophilic passivation. Therefore, a simple surface engineering to control surface wettability can notably improve the sensitivity of a biosensor without additional efforts, such as modifying the sensor structure, optimizing the bio-treatment protocol, or increasing the binding yield between a probe and its target, among other efforts. PMID:22985673

  3. Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO{sub 2} structure using fast I-V measurement

    SciTech Connect

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang Lu, Ying-Hsin; Tsai, Jyun-Yu; Liu, Kuan-Ju; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-03-17

    This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO{sub 2} n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (V{sub t}) shifts positively during fast I-V double sweep measurement. However, in I/O devices, V{sub t} shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting Hf{sub x}Zr{sub 1−x}O{sub 2} as gate oxide, can reduce the charge/discharge effect.

  4. Investigation of dielectric modulated (DM) double gate (DG) junctionless MOSFETs for application as a biosensors

    NASA Astrophysics Data System (ADS)

    Ajay; Narang, Rakhi; Saxena, Manoj; Gupta, Mridula

    2015-09-01

    In this paper, an analytical model for Junctionless (JL) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based biosensor for label free electrical detection of biomolecules like enzyme, cell, DNA etc. using the Dielectric Modulation (DM) technique has been developed. The analytical results are validated with the help of "Sentaurus" device simulation software. For the biomolecule immobilization, nanogap cavity is formed in the JL MOSFET by etching gate oxide layer from both source as well as drain end of the channel. As a result, the surface potential in the channel underneath the nanogap cavity region is affected by the neutral and charged biomolecules that binds to SiO2 adhesion layer in the cavity. The surface potential solution is obtained by solving a 2-D Poisson's equation assuming parabolic potential profile in the channel. The shift in threshold voltage and drain current of the device has been considered as the sensing metric for detection of biomolecules under dry environment condition.

  5. L{sub g} = 100 nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

    SciTech Connect

    Koh, D. E-mail: Taewoo.Kim@sematech.org; Kwon, H. M.; Kim, T.-W. E-mail: Taewoo.Kim@sematech.org; Veksler, D.; Gilmer, D.; Kirsch, P. D.; Kim, D.-H.; Hudnall, Todd W.; Bielawski, Christopher W.; Maszara, W.; Banerjee, S. K.

    2014-04-21

    In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100 mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/μm, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7 nm technology node and/or beyond.

  6. Biosensor commercialization strategy - a theoretical approach.

    PubMed

    Lin, Chin-Tsai; Wang, Su-Man

    2005-01-01

    Biosensors are analytical devices, which use biological interactions to provide either qualitative or quantitative results. They are extensively employed in many fields such as clinical diagnosis and biomedicine, military applications, anti-terrorism, farm, garden and veterinary analysis, process control, fermentation control and analysis, pharmaceutical and drug analysis, food and drink production and analysis, pollution control and monitoring, microbiology, bacterial and viral analysis, mining, and industrial and toxic gases. The biosensor market has significantly increased and will be mushrooming in the next decade. The total biosensor market is estimated to be 10.8 billion dollars by 2007. The emerging biosensor market presents both opportunities and obstacles to start-up biosensor entrepreneurs. The major challenge and threat for these entrepreneurs is how to predict the biosensor market and how to convert promising biosensor technology into commercialized biosensors. By adopting a simple commercialization strategy framework, we identify two key elements of biosensor commercialization strategy: excludability and complementary asset. We further divide biosensor commercialization environments into four distinct sub-environments: the Attacker's Advantage, Reputation-Based Idea Trading, Greenfield Competition and Ideas Factories. This paper explains how the interaction between these two key elements shapes biosensor commercialization strategy and biosensor industry dynamics. This paper also discusses alternative commercialization strategies for each specific commercialization environment and how to choose from these alternatives. The analysis of this study further provides a good reference for start-up biosensor entrepreneurs to formulate effective biosensor commercialization strategy. PMID:15574353

  7. High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide

    SciTech Connect

    Liang, Shibo; Zhang, Zhiyong Si, Jia; Zhong, Donglai; Peng, Lian-Mao

    2014-08-11

    High-performance p-type carbon nanotube (CNT) transistors utilizing yttrium oxide as gate dielectric are presented by optimizing oxidization and annealing processes. Complementary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs) are then fabricated on CNTs, and the p- and n-type devices exhibit symmetrical high performances, especially with low threshold voltage near to zero. The corresponding CMOS CNT inverter is demonstrated to operate at an ultra-low supply voltage down to 0.2 V, while displaying sufficient voltage gain, high noise margin, and low power consumption. Yttrium oxide is proven to be a competitive gate dielectric for constructing high-performance CNT CMOS FETs and integrated circuits.

  8. Optical biosensors

    PubMed Central

    Damborský, Pavel; Švitel, Juraj

    2016-01-01

    Optical biosensors represent the most common type of biosensor. Here we provide a brief classification, a description of underlying principles of operation and their bioanalytical applications. The main focus is placed on the most widely used optical biosensors which are surface plasmon resonance (SPR)-based biosensors including SPR imaging and localized SPR. In addition, other optical biosensor systems are described, such as evanescent wave fluorescence and bioluminescent optical fibre biosensors, as well as interferometric, ellipsometric and reflectometric interference spectroscopy and surface-enhanced Raman scattering biosensors. The optical biosensors discussed here allow the sensitive and selective detection of a wide range of analytes including viruses, toxins, drugs, antibodies, tumour biomarkers and tumour cells. PMID:27365039

  9. Optical biosensors.

    PubMed

    Damborský, Pavel; Švitel, Juraj; Katrlík, Jaroslav

    2016-06-30

    Optical biosensors represent the most common type of biosensor. Here we provide a brief classification, a description of underlying principles of operation and their bioanalytical applications. The main focus is placed on the most widely used optical biosensors which are surface plasmon resonance (SPR)-based biosensors including SPR imaging and localized SPR. In addition, other optical biosensor systems are described, such as evanescent wave fluorescence and bioluminescent optical fibre biosensors, as well as interferometric, ellipsometric and reflectometric interference spectroscopy and surface-enhanced Raman scattering biosensors. The optical biosensors discussed here allow the sensitive and selective detection of a wide range of analytes including viruses, toxins, drugs, antibodies, tumour biomarkers and tumour cells. PMID:27365039

  10. Solution-processed carbon nanotube thin-film complementary static random access memory

    NASA Astrophysics Data System (ADS)

    Geier, Michael L.; McMorrow, Julian J.; Xu, Weichao; Zhu, Jian; Kim, Chris H.; Marks, Tobin J.; Hersam, Mark C.

    2015-11-01

    Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties, making them one of the most promising candidates for solution-processable, high-performance integrated circuits. In particular, advances in the enrichment of high-purity semiconducting SWCNTs have enabled recent circuit demonstrations including synchronous digital logic, flexible electronics and high-frequency applications. However, due to the stringent requirements of the transistors used in complementary metal-oxide-semiconductor (CMOS) logic as well as the absence of sufficiently stable and spatially homogeneous SWCNT thin-film transistors, the development of large-scale SWCNT CMOS integrated circuits has been limited in both complexity and functionality. Here, we demonstrate the stable and uniform electronic performance of complementary p-type and n-type SWCNT thin-film transistors by controlling adsorbed atmospheric dopants and incorporating robust encapsulation layers. Based on these complementary SWCNT thin-film transistors, we simulate, design and fabricate arrays of low-power static random access memory circuits, achieving large-scale integration for the first time based on solution-processed semiconductors.

  11. Solution-processed carbon nanotube thin-film complementary static random access memory.

    PubMed

    Geier, Michael L; McMorrow, Julian J; Xu, Weichao; Zhu, Jian; Kim, Chris H; Marks, Tobin J; Hersam, Mark C

    2015-11-01

    Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties, making them one of the most promising candidates for solution-processable, high-performance integrated circuits. In particular, advances in the enrichment of high-purity semiconducting SWCNTs have enabled recent circuit demonstrations including synchronous digital logic, flexible electronics and high-frequency applications. However, due to the stringent requirements of the transistors used in complementary metal-oxide-semiconductor (CMOS) logic as well as the absence of sufficiently stable and spatially homogeneous SWCNT thin-film transistors, the development of large-scale SWCNT CMOS integrated circuits has been limited in both complexity and functionality. Here, we demonstrate the stable and uniform electronic performance of complementary p-type and n-type SWCNT thin-film transistors by controlling adsorbed atmospheric dopants and incorporating robust encapsulation layers. Based on these complementary SWCNT thin-film transistors, we simulate, design and fabricate arrays of low-power static random access memory circuits, achieving large-scale integration for the first time based on solution-processed semiconductors. PMID:26344184

  12. A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.

    PubMed

    Cho, Ah-Jin; Park, Kee Chan; Kwon, Jang-Yeon

    2015-01-01

    For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material. Even though many research groups have studied on the graphene, its intrinsic nature of a zero band-gap, limits its use in practical applications, particularly in logic circuits. Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility. Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor. The advantages provided by the complementary metal-oxide-semiconductor (CMOS) configuration and the high-performance TMD channels allow us to fabricate a TMD complementary inverter that has a high-gain of 13.7. This work demonstrates the operation of the MoS2 n-FET and WSe2 p-FET on the same substrate, and the electrical performance of the CMOS inverter, which is based on a different driving current, is also measured. PMID:25852410

  13. A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors

    NASA Astrophysics Data System (ADS)

    Cho, Ah-Jin; Park, Kee Chan; Kwon, Jang-Yeon

    2015-03-01

    For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material. Even though many research groups have studied on the graphene, its intrinsic nature of a zero band-gap, limits its use in practical applications, particularly in logic circuits. Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility. Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor. The advantages provided by the complementary metal-oxide-semiconductor (CMOS) configuration and the high-performance TMD channels allow us to fabricate a TMD complementary inverter that has a high-gain of 13.7. This work demonstrates the operation of the MoS2 n-FET and WSe2 p-FET on the same substrate, and the electrical performance of the CMOS inverter, which is based on a different driving current, is also measured.

  14. Impact of La{sub 2}O{sub 3} interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks deposited by atomic-layer-deposition

    SciTech Connect

    Chang, C.-Y. Takenaka, M.; Takagi, S.; Ichikawa, O.; Osada, T.; Hata, M.; Yamada, H.

    2015-08-28

    We examine the electrical properties of atomic layer deposition (ALD) La{sub 2}O{sub 3}/InGaAs and Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La{sub 2}O{sub 3}/InGaAs interface provides low interface state density (D{sub it}) with the minimum value of ∼3 × 10{sup 11} cm{sup −2} eV{sup −1}, which is attributable to the excellent La{sub 2}O{sub 3} passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La{sub 2}O{sub 3}. In order to simultaneously satisfy low D{sub it} and small hysteresis, the effectiveness of Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks with ultrathin La{sub 2}O{sub 3} interfacial layers is in addition evaluated. The reduction of the La{sub 2}O{sub 3} thickness to 0.4 nm in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, D{sub it} of the Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs interfaces becomes higher than that of the La{sub 2}O{sub 3}/InGaAs ones, attributable to the diffusion of Al{sub 2}O{sub 3} through La{sub 2}O{sub 3} into InGaAs and resulting modification of the La{sub 2}O{sub 3}/InGaAs interface structure. As a result of the effective passivation effect of La{sub 2}O{sub 3} on InGaAs, however, the Al{sub 2}O{sub 3}/10 cycle (0.4 nm) La{sub 2}O{sub 3}/InGaAs gate stacks can realize still lower D{sub it} with maintaining small hysteresis and low leakage current than the conventional Al{sub 2}O{sub 3}/InGaAs MOS interfaces.

  15. Complementary medicine.

    PubMed

    Ernst, E

    2003-03-01

    Complementary medicine has become an important subject for rheumatologists, not least because many patients try complementary treatments. Recent clinical trials yield promising results. In particular, evidence suggests that several herbal medicines and dietary supplements can alleviate the pain of osteoarthritis and rheumatoid arthritis. Clearly, rigorous testing of complementary treatments is possible, and considering their popularity, should be encouraged. PMID:12598804

  16. Scanning tunneling microscopy studies of growth medium & temperature dependent structural phases of alkanethiol self-assembled monolayers, reactive self-assembled monolayers, & flat gold nanoparticle/indium tin oxide substrates and a scanning surface photovoltage microscopy study for local mechanical stress characterization in complementary metal oxide semiconductor devices

    NASA Astrophysics Data System (ADS)

    Dahanayaka, Dahanayaka Liyanage Daminda Hemal

    Self-assembled monolayers (SAMs) of alkanethiolates on Au(111) represent promising platforms to study the molecular surfaces and interfaces for applications ranging from molecular electronics, nanophotonics to biology. Understanding the effect of growth conditions on SAMs particularly on their structural features is important from both fundamental and applied points of view. Knowledge of SAM structural features and structural phase transitions provides important insights into molecular packing for the control of the molecular self-assembly. We compared SAMs grown from different media, from 1 mM C10 solution in decalin, hexadecane and triethylene glycol and from C10 vapor. We present a molecularly-resolved scanning tunneling microscopy study showing the dependence of the SAM structure on the growth conditions. We have established conditions for making samples almost vacancy islands (VI) free with very large SAM domains of (2✓3 x 3)rect. superstructure and (✓3 x 4✓3)R30° striped-phase and investigated the orientation of low-index step edges of Au(111) for normal and striped-phase SAMs. We showed that the striped phase is stable to converting to (2✓3 x 3)rect. below 40°C. We demonstrate that flat gold nanoparticles (FGNPs) supported on indium tin oxide glass (ITO) are excellent substrates for molecularly-resolved STM imaging of alkanethiol SAMs. Nanoparticles were characterized using STM, TEM, and SEM techniques. Surface treatment techniques, Ar/O2 and H 2 plasma treatments, dry thermal annealing and exposures to UV/O 3, were used to prepare the surfaces of FGNPs supported on ITO and Au/mica substrates for high-resolution STM imaging of alkanethiol SAMs. We developed a convergent approach to functionalize SAM surfaces. Ordered mixed monolayers comprised of alkanethiols and azidoalkanethiols islands are formed and subsequent IMesCuIBr catalyzed [3+2] "click" cycloaddition reaction with substituted alkyne introduced dilute substituent onto the ordered surface. Mechanical stress is one of the major factors in current design and manufacture of very large scale integrated (VLSI) devices. Mechanical stress in deep sub-micron silicon technologies can drastically alter carrier mobility (e.g., approximately 25% dependent on device geometry). This affects the device performance. Current in-line production stress metrology is conducted only at a wafer monitor level. The available stress measurement techniques such as micro-Raman spectroscopy, nano beam diffraction (NBD), converging electron beam diffraction (CEBD) either do not have required resolution or they require complex data interpretation. We present a method for measuring mechanical stress in deep submicron silicon devices with high spatial resolution using scanning Kelvin probe force microscopy and scanning surface photovoltage (SSPVM) techniques.

  17. Complementary medicine.

    PubMed Central

    Spiegel, D; Stroud, P; Fyfe, A

    1998-01-01

    The widespread use of complementary and alternative medicine techniques, often explored by patients without discussion with their primary care physician, is seen as a request from patients for care as well as cure. In this article, we discuss the reasons for the growth of and interest in complementary and alternative medicine in an era of rapidly advancing medical technology. There is, for instance, evidence of the efficacy of supportive techniques such as group psychotherapy in improving adjustment and increasing survival time of cancer patients. We describe current and developing complementary medicine programs as well as opportunities for integration of some complementary techniques into standard medical care. PMID:9584661

  18. Complementary Treatment

    MedlinePlus

    ... someone living with PD, this section focuses on herbs, vitamins and supplements. If you are considering complementary ... product recommendations regarding such products. Key Points Most herbs and supplements have not been rigorously studied as ...

  19. Complementary Study

    SciTech Connect

    Yamada, H.

    2009-02-19

    In this lecture, it is emphasized that sufficient resolution of scientific issues for a fusion energy reactor can be given by complementary studies. Key scientific issues for a fusion energy reactor and ITER addressed by a complementary study in the Large Helical Device (LHD) are discussed. It should be noted that ITER is definitely a necessary condition but not a sufficient condition. Helical systems including stellarators and heliotrons are defined as alternative concepts. These approaches also aim at a fusion energy reactor based on their own concept and simultaneously benefit progress in tokamaks, more specifically ITER itself. The exact science to manage a 3-D geometry has been being developed in helical systems. A physical model with much accuracy and breadth will demonstrate its applicability to ITER. Topics to validate ''complementary'' approaches such as 3-D equilibrium, interchange MHD mode, control of radial electric field and structure formation, dynamics of a magnetic island, density limit and edge plasmas are discussed. Complementary is not Supplementary. ITER is complementary to development of a helical fusion energy reactor as well. Complementary approaches transcend existing disciplinary horizons and enable big challenges.

  20. Efficient Image-Vector-Generation Processor for Edge-Based Complementary Feature Representations

    NASA Astrophysics Data System (ADS)

    Yamashita, Naoya; Shibata, Tadashi

    2012-02-01

    A digital processor dedicated to edge-based image vector generation has been developed aiming at real-time image recognition. The processor consists of an on-chip memory and 16 single instruction multiple data (SIMD) processing elements. The capacity of the on-chip memory as well as the overhead for starting the processing have been minimized by introducing a seamless data transferring scheme from memory to processing elements. The 16 SIMD processing elements work together either as accumulators or as shift registers, thus achieving a very efficient generation of two different kinds of feature vector: projected principal-edge distribution (PPED)[3,4] and averaged principal-edge distribution (APED).[5] Concurrent use of these two vectors is shown to be very important for robust image recognition.[5] The chip was fabricated using 0.18-µm complementary metal oxide semiconductor (CMOS) technology and the generation of 64-dimension PPED and APED vectors at 84.7 and 83.9 fps, respectively, from video graphics array (VGA) size images was demonstrated at 62.5 MHz.

  1. Biomimetic Trehalose Biosensor Using Gustatory Receptor (Gr5a) Expressed in Drosophila Cells and Ion-Sensitive Field-Effect Transistor

    NASA Astrophysics Data System (ADS)

    Lau, Hui-Chong; Bae, Tae-Eon; Jang, Hyun-June; Kwon, Jae-Young; Cho, Won-Ju; Lim, Jeong-Ok

    2013-04-01

    The development of potential applications of biosensors using the sensory systems of vertebrates and invertebrates has progressed rapidly, especially in clinical diagnosis. The biosensor developed here involves the use of Drosophila cells expressing the gustatory receptor Gr5a and an ion-sensitive field-effect transistor (ISFET) sensor device. Gustatory receptor Gr5a is expressed abundantly in gustatory neurons and acts as a primary marker for tastants, especially sugar, in Drosophila. As a result, it could potentially serve as a good candidate for potential biomarkers of diseases in which the current knowledge of the cause and treatment is limited. The developed ISFET was based on the outstanding electrical characteristics of the metal-oxide-semiconductor field-effect transistor (MOSFET) with a subthreshold swing of 85 mV/dec, low leakage current of <10-12 and high on/off current ratio of 7.3×106. The SiO2 sensing membrane with a pH sensitivity of 34.9 mV/pH and drift rate 1.17 mV/h was sufficient for biosensing applications. In addition, the sensor device also showed significant compatibility with the Drosophila cells expressing Gr5a and their response to sugar, particularly trehalose. Moreover, the interactions between the transfected Drosophila cells and trehalose were consistent and reliable. This suggests that the developed ISFET sensor device could have potential use in the future as a screening device in diagnosis.

  2. Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors

    NASA Astrophysics Data System (ADS)

    van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

    2016-06-01

    We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (~6) and ultralow static power dissipation (<=0.3 pW) at an input voltage of +/-3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (~6) and ultralow static power dissipation (<=0.3 pW) at an input voltage of +/-3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01040g

  3. Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors.

    PubMed

    Chen, Haitian; Cao, Yu; Zhang, Jialu; Zhou, Chongwu

    2014-01-01

    Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors to achieve large-scale (>1,000 transistors for 501-stage ring oscillators) complementary macroelectronic circuits on both rigid and flexible substrates. This approach of hybrid integration allows us to combine the strength of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and offers high device yield and low device variation. Based on this approach, we report the successful demonstration of various logic gates (inverter, NAND and NOR gates), ring oscillators (from 51 stages to 501 stages) and dynamic logic circuits (dynamic inverter, NAND and NOR gates). PMID:24923382

  4. Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

    PubMed

    Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

    2016-06-01

    We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics. PMID:27240692

  5. Symmetric complementary logic inverter using integrated black phosphorus and MoS2 transistors

    NASA Astrophysics Data System (ADS)

    Su, Yang; Kshirsagar, Chaitanya U.; Robbins, Matthew C.; Haratipour, Nazila; Koester, Steven J.

    2016-03-01

    The operation of an integrated two-dimensional complementary metal-oxide-semiconductor inverter with well-matched input/output voltages is reported. The circuit combines a few-layer MoS2 n-MOSFET and a black phosphorus (BP) p-MOSFET fabricated using a common local backgate electrode with thin (20 nm) HfO2 gate dielectric. The constituent devices have linear threshold voltages of -0.8 V and +0.8 V and produce peak transconductances of 16 μS μm-1 and 41 μS μm-1 for the MoS2 n-MOSFET and BP p-MOSFET, respectively. The inverter shows a voltage gain of 3.5 at a supply voltage, V DD = 2.5 V, and has peak switching current of 108 μA and off-state current of 8.4 μA (2.4 μA) at V IN = 0 (V IN = 2.5 V). In addition, the inverter has voltage gain greater than unity for V DD ≥ 0.5 V, has open butterfly curves for V DD ≥ 1 V, and achieves static noise margin over 500 mV at V DD = 2.5 V. The voltage gain was found to be insensitive to temperature between 270 and 340 K, and AC large and small-signal operation was demonstrated at frequencies up to 100 kHz. The demonstration of a complementary 2D inverter which operates in a symmetric voltage window suitable for driving a subsequent logic stage is a significant step forward in developing practical applications for devices based upon 2D materials.

  6. Complementary and Other Interventions

    MedlinePlus

    ... Treatment of ADHD Complementary and Other Interventions Coaching Neurofeedback (EEG Biofeedback) Fish Oil Supplements and ADHD Carrying Your ... and Other Interventions Complementary and Other Interventions Coaching Neurofeedback (EEG Biofeedback) Fish Oil Supplements and ADHD Complementary and ...

  7. Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters.

    PubMed

    Jeong, Yong Jin; An, Tae Kyu; Yun, Dong-Jin; Kim, Lae Ho; Park, Seonuk; Kim, Yebyeol; Nam, Sooji; Lee, Keun Hyung; Kim, Se Hyun; Jang, Jaeyoung; Park, Chan Eon

    2016-03-01

    Complementary inverters consisting of p-type organic and n-type metal oxide semiconductors have received considerable attention as key elements for realizing low-cost and large-area future electronics. Solution-processed ZnO thin-film transistors (TFTs) have great potential for use in hybrid complementary inverters as n-type load transistors because of the low cost of their fabrication process and natural abundance of active materials. The integration of a single ZnO TFT into an inverter requires the development of a simple patterning method as an alternative to conventional time-consuming and complicated photolithography techniques. In this study, we used a photocurable polymer precursor, zinc acrylate (or zinc diacrylate, ZDA), to conveniently fabricate photopatternable ZnO thin films for use as the active layers of n-type ZnO TFTs. UV-irradiated ZDA thin films became insoluble in developing solvent as the acrylate moiety photo-cross-linked; therefore, we were able to successfully photopattern solution-processed ZDA thin films using UV light. We studied the effects of addition of a tiny amount of indium dopant on the transistor characteristics of the photopatterned ZnO thin films and demonstrated low-voltage operation of the ZnO TFTs within ±3 V by utilizing Al2O3/TiO2 laminate thin films or ion-gels as gate dielectrics. By combining the ZnO TFTs with p-type pentacene TFTs, we successfully fabricated organic/inorganic hybrid complementary inverters using solution-processed and photopatterned ZnO TFTs. PMID:26840992

  8. DETECTION OF DNA DAMAGE USING A FIBEROPTIC BIOSENSOR

    EPA Science Inventory

    A rapid and sensitive fiber optic biosensor assay for radiation-induced DNA damage is reported. For this assay, a biotin-labeled capture oligonucleotide (38 mer) was immobilized to an avidin-coated quartz fiber. Hybridization of a dye-labeled complementary sequence was observed...

  9. Electrochemical application of DNA biosensors

    NASA Astrophysics Data System (ADS)

    Mascini, M.; Lucarelli, F.; Palchetti, I.; Marrazza, G.

    2001-09-01

    Disposable electrochemical DNA-based biosensors are reviewed; they have been used for the determination of low- molecular weight compounds with affinity for nucleic acids and for the detection of hybridization reaction. The first application is related to the molecular interaction between surface-linked DNA and pollutants or drugs, in order to develop a simple device for rapid screening of toxic compounds. The determination of such compounds was measured by their effect simple device for rapid screening of toxic compounds. The determination of such compounds was measured by their effect on the oxidation signal of the guanine peak of calf thymus DNA immobilized on the electrode surface and investigated by chronopotentiometric or voltammetric analysis. Applicability to river and wastewater sample is demonstrated. Moreover, disposable electrochemical sensors for the detection of a specific sequence of DNA were realized by immobilizing synthetic single-stranded oligonucleotides onto a graphite screen-printed electrode. The probes because hybridized with different concentrations of complementary sequences present in the sample. The hybrids formed on the electrode surface were evaluated by chronopotentiometric analysis using daunomycin as the indicator of the hybridization reaction. The hybridization was also performed using real samples. Application to apolipoprotein E is described, in this case samples have to be amplified by PCR and then analyzed by the DNA biosensor. The extension of such procedures to samples of environmental interest or to contamination of food is discussed.

  10. Complementary and Alternative Medicine

    MedlinePlus

    ... Help a Friend Who Cuts? Complementary and Alternative Medicine KidsHealth > For Teens > Complementary and Alternative Medicine Print ... replacement. continue How Is CAM Different From Conventional Medicine? Conventional medicine is based on scientific knowledge of ...

  11. Complementary and Integrative Medicine

    MedlinePlus

    ... medical treatments that are not part of mainstream medicine. When you are using these types of care, it may be called complementary, integrative, or alternative medicine. Complementary medicine is used together with mainstream medical ...

  12. Complementary and Integrative Medicine

    MedlinePlus

    ... care, it may be called complementary, integrative, or alternative medicine. Complementary medicine is used together with mainstream medical ... types of care, it is called integrative medicine. Alternative medicine is used instead of mainstream medical care. The ...

  13. Fiber optic biosensor using aptamer as receptors

    NASA Astrophysics Data System (ADS)

    Yu, Shuqin; Cai, Xiaokun; Tan, Xianglin; Zhu, Yexiang; Lu, Bin

    2001-09-01

    Reagentless biosensor that can directly transducer molecular recognition to optical signal should potentiate the development of sensor array fora wide variety of analytes. Nucleic acid aptamer can bind ligand tightly and specifically with conformational change of aptamer, and can be used as a receptor in biosensor. We have therefore developed a fiber-optic biosensor by aptamer connected with molecular beacon. Molecular beacons consist of an oligonucleotide sequence containing complementary sequence sections at either end. These two sequence containing segments base pair with each other to form a hairpin shaped loop structure, the fluorophore and quencher were attached at 5 foot- and 3 foot-end of molecular beacon respectively. When thrombin binding to the stem-loop of molecular beacon aptamer, the pseudoknot structure was interrupted, resulting a release of fluorescence from quenching and a increase in fluorescence emission. This novel biosensor system in this project has a large potential and is specific and sensitivity. A similar strategy could be used to study other analytes such as protein and small molecules.

  14. A complementary dual-slope ADC with high frame rate and wide input range for fast X-ray imaging

    NASA Astrophysics Data System (ADS)

    Lee, Daehee; Cho, Minsik; Kang, Dong-Uk; Kim, Myung Soo; Kim, Hyunduk; Cho, Gyuseong

    2014-02-01

    The single-slope analog-to-digital converter (SS-ADC) is the most commonly used column-level ADC for high-speed industrial, complementary metal-oxide semiconductor (CMOS)-based X-ray image sensors because of its small chip area (the width of a pixel), its simple circuit structure, and its low power consumption. However, it generally has a long conversion time, so we propose an innovative design: a complimentary dual-slope ADC (CDS-ADC) that uses two opposite ramp signals instead of a single ramp to double the conversion speed. This CDS-ADC occupies only 15% more area than the original SS-ADC. A prototype 12-bit CDS-ADC and a 12-bit SS-ADC were fabricated using a 0.35-µm 1P 4M CMOS process. During comparison of the two, the measured maximum differential non-linearity (DNL) of the CDS-ADC was a 0.49 least significant bit (LSB), the maximum integral non-linearity (INL) was a 0.43 LSB, the effective number of bits (ENOB) was 9.18 bits, and the figure of merit (FOM) was 0.03 pJ/conversion. The total power consumption was 0.031 uW. The conversion time of the new CDS-ADC was half that of the SS-ADC. The proposed dual-slope concept can be extended to further multiply the conversion speed by using multiple pairs of dual-slope ramps.

  15. CMOS Active-Pixel Image Sensor With Simple Floating Gates

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

    1996-01-01

    Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

  16. Biosensors for Cell Analysis.

    PubMed

    Zhou, Qing; Son, Kyungjin; Liu, Ying; Revzin, Alexander

    2015-01-01

    Biosensors first appeared several decades ago to address the need for monitoring physiological parameters such as oxygen or glucose in biological fluids such as blood. More recently, a new wave of biosensors has emerged in order to provide more nuanced and granular information about the composition and function of living cells. Such biosensors exist at the confluence of technology and medicine and often strive to connect cell phenotype or function to physiological or pathophysiological processes. Our review aims to describe some of the key technological aspects of biosensors being developed for cell analysis. The technological aspects covered in our review include biorecognition elements used for biosensor construction, methods for integrating cells with biosensors, approaches to single-cell analysis, and the use of nanostructured biosensors for cell analysis. Our hope is that the spectrum of possibilities for cell analysis described in this review may pique the interest of biomedical scientists and engineers and may spur new collaborations in the area of using biosensors for cell analysis. PMID:26274599

  17. Complementary Paired G4FETs as Voltage-Controlled NDR Device

    NASA Technical Reports Server (NTRS)

    Mojarradi, Mohammad; Chen, Suheng; Blalock, Ben; Britton, Chuck; Prothro, Ben; Vandersand, James; Schrimph, Ron; Cristoloveanu, Sorin; Akavardar, Kerem; Gentil, P.

    2009-01-01

    It is possible to synthesize a voltage-controlled negative-differential-resistance (NDR) device or circuit by use of a pair of complementary G4FETs (four-gate field-effect transistors). [For more information about G4FETs, please see the immediately preceding article]. As shown in Figure 1, the present voltage-controlled NDR device or circuit is an updated version of a prior NDR device or circuit, known as a lambda diode, that contains a pair of complementary junction field-effect transistors (JFETs). (The lambda diode is so named because its current-versus- voltage plot bears some resemblance to an upper-case lambda.) The present version can be derived from the prior version by substituting G4FETs for the JFETs and connecting both JFET gates of each G4FET together. The front gate terminals of the G4FETs constitute additional terminals (that is, terminals not available in the older JFET version) to which one can apply control voltages VN and VP. Circuits in which NDR devices have been used include (1) Schmitt triggers and (2) oscillators containing inductance/ capacitance (LC) resonant circuits. Figure 2 depicts such circuits containing G4FET NDR devices like that of Figure 1. In the Schmitt trigger shown here, the G4FET NDR is loaded with an ordinary inversion-mode, p-channel, metal oxide/semiconductor field-effect transistor (inversion-mode PMOSFET), the VN terminal of the G4FET NDR device is used as an input terminal, and the input terminals of the PMOSFET and the G4FET NDR device are connected. VP can be used as an extra control voltage (that is, a control voltage not available in a typical prior Schmitt trigger) for adjusting the pinch-off voltage of the p-channel G4FET and thereby adjusting the trigger-voltage window. In the oscillator, a G4FET NDR device is loaded with a conventional LC tank circuit. As in other LC NDR oscillators, oscillation occurs because the NDR counteracts the resistance in the tank circuit. The advantage of this G4FET-NDR LC oscillator

  18. Electrosprayed Metal Oxide Semiconductor Films for Sensitive and Selective Detection of Hydrogen Sulfide

    PubMed Central

    Ghimbeu, Camelia Matei; Lumbreras, Martine; Schoonman, Joop; Siadat, Maryam

    2009-01-01

    Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO2), tungsten oxide (WO3) and indium oxide (In2O3) were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD). The morphology studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM) shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD) proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H2S (10 ppm) at low operating temperatures (100 and 200 °C) and the best response in terms of Rair/Rgas is given by Cu-SnO2 films (2500) followed by WO3 (1200) and In2O3 (75). Moreover, all the films exhibit no cross-sensitivity to other reducing (SO2) or oxidizing (NO2) gases. PMID:22291557

  19. A novel RF-insensitive EED utilizing an integrated metal-oxide-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Baginski, Thomas A.; Baginski, Michael E.

    1990-05-01

    The description and characterization of an electroexplosive device (EED) are presented. The structure is designed, using microelectric fabrication techniques, to be inherently immune to radio frequency (RF) radiation and also offers protection against stray signals associated with RF-induced arcing. A detailed discussion of the structure, which includes the fundamental mechanisms of operation, fabrication techniques, the device's frequency response and sensitivity to RF-induced arcing, and its compatibility with present fire control systems, is provided. Preliminary test results of the prototype device are discussed and show a significant improvement in the system's overall EMI immunity. These results include bench and field measurements of the structure's RF response for frequencies of 10-225 MHz and field measurements of the device's sensitivity to RF-induced arcing. The measurements indicate a significant reduction in real power dissipated by an EED employing the structure over an EED employing a conventional bridgewire (20 dB at 90 MHz).

  20. Impact of Air Filter Material on Metal Oxide Semiconductor (MOS) Device Characteristics in HF Vapor Environment

    NASA Astrophysics Data System (ADS)

    Hsiao, Chih-Wen; Lou, Jen-Chung; Yeh, Ching-Fa; Hsieh, Chih-Ming; Lin, Shiuan-Jeng; Kusumi, Toshio

    2004-05-01

    Airborne molecular contamination (AMC) is becoming increasingly important as devices are scaled down to the nanometer generation. Optimum ultra low penetration air (ULPA) filter technology can eliminate AMC. In a cleanroom, however, the acid vapor generated from the cleaning process may degrade the ULPA filter, releasing AMC to the air and the surface of wafers, degrading the electrical characteristics of devices. This work proposes the new PTFE ULPA filter, which is resistant to acid vapor corrosion, to solve this problem. Experimental results demonstrate that the PTFE ULPA filter can effectively eliminate the AMC and provide a very clean cleanroom environment.

  1. Modeling of metal-oxide semiconductor: Analytical bond-order potential for cupric oxide

    NASA Astrophysics Data System (ADS)

    Li, Kun; Yang, Wen; Wei, Ji-Lin; Du, Shi-Wen; Li, Yong-Tang

    2014-04-01

    Atomistic potentials for cupric element and cupric oxide are derived based on the analytical bond-order scheme that was presented by Brenner [Brenner D W, “Erratum: Empirical potential for hydrocarbons for use in simulating the chemical vapor deposition of diamond films”, Phys. Rev. B 1992, 46 1948]. In this paper, for the pure cupric element, the energy and structural parameters for several bulk phases as well as dimmer structure are well reproduced. The reference data are taken from our density functional theory calculations and the available experiments. The model potential also provides a good description of the bulk properties of various solid structures of cupric oxide compound structures, including cohesive energies, lattice parameters, and elastic constants.

  2. Metal-oxide-semiconductor characteristics of chemical vapor deposited cubic-SiC

    NASA Astrophysics Data System (ADS)

    Shibahara, K.; Nishino, S.; Matsunami, H.

    1984-11-01

    Thermal oxidation of chemical vapor deposited (CVD) cubic-SiC and fabrication of MOS diodes using a thermal oxide film were carried out. The thermal oxide was found to be SiO2 by Auger electron spectroscopic analysis. Capacitance-voltage curves of MOS diodes measured under the dark condition showed deep depletion characteristics. Inversion characteristics were observed under the illuminated condition for the first time.

  3. Π Band Dispersion along Conjugated Organic Nanowires Synthesized on a Metal Oxide Semiconductor.

    PubMed

    Vasseur, Guillaume; Abadia, Mikel; Miccio, Luis A; Brede, Jens; Garcia-Lekue, Aran; de Oteyza, Dimas G; Rogero, Celia; Lobo-Checa, Jorge; Ortega, J Enrique

    2016-05-01

    Surface-confined dehalogenation reactions are versatile bottom-up approaches for the synthesis of carbon-based nanostructures with predefined chemical properties. However, for devices generally requiring low-conductivity substrates, potential applications are so far severely hampered by the necessity of a metallic surface to catalyze the reactions. In this work we report the synthesis of ordered arrays of poly(p-phenylene) chains on the surface of semiconducting TiO2(110) via a dehalogenative homocoupling of 4,4″-dibromoterphenyl precursors. The supramolecular phase is clearly distinguished from the polymeric one using low-energy electron diffraction and scanning tunneling microscopy as the substrate temperature used for deposition is varied. X-ray photoelectron spectroscopy of C 1s and Br 3d core levels traces the temperature of the onset of dehalogenation to around 475 K. Moreover, angle-resolved photoemission spectroscopy and tight-binding calculations identify a highly dispersive band characteristic of a substantial overlap between the precursor's π states along the polymer, considered as the fingerprint of a successful polymerization. Thus, these results establish the first spectroscopic evidence that atomically precise carbon-based nanostructures can readily be synthesized on top of a transition-metal oxide surface, opening the prospect for the bottom-up production of novel molecule-semiconductor devices. PMID:27115554

  4. Synthesis Methods, Microscopy Characterization and Device Integration of Nanoscale Metal Oxide Semiconductors for Gas Sensing

    PubMed Central

    Vander Wal, Randy L.; Berger, Gordon M.; Kulis, Michael J.; Hunter, Gary W.; Xu, Jennifer C.; Evans, Laura

    2009-01-01

    A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. Both nanostructures possess a one-dimensional morphology. Different synthesis methods are used to produce these materials: thermal evaporation-condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed. Practical issues associated with harvesting, purification, and integration of these materials into sensing devices are detailed. For comparison to the nascent form, these sensing materials are surface coated with Pd and Pt nanoparticles. Gas sensing tests, with respect to H2, are conducted at ambient and elevated temperatures. Comparative normalized responses and time constants for the catalyst and noncatalyst systems provide a basis for identification of the superior metal-oxide nanostructure and catalyst combination. With temperature-dependent data, Arrhenius analyses are made to determine activation energies for the catalyst-assisted systems. PMID:22408484

  5. Π Band Dispersion along Conjugated Organic Nanowires Synthesized on a Metal Oxide Semiconductor

    PubMed Central

    2016-01-01

    Surface-confined dehalogenation reactions are versatile bottom-up approaches for the synthesis of carbon-based nanostructures with predefined chemical properties. However, for devices generally requiring low-conductivity substrates, potential applications are so far severely hampered by the necessity of a metallic surface to catalyze the reactions. In this work we report the synthesis of ordered arrays of poly(p-phenylene) chains on the surface of semiconducting TiO2(110) via a dehalogenative homocoupling of 4,4″-dibromoterphenyl precursors. The supramolecular phase is clearly distinguished from the polymeric one using low-energy electron diffraction and scanning tunneling microscopy as the substrate temperature used for deposition is varied. X-ray photoelectron spectroscopy of C 1s and Br 3d core levels traces the temperature of the onset of dehalogenation to around 475 K. Moreover, angle-resolved photoemission spectroscopy and tight-binding calculations identify a highly dispersive band characteristic of a substantial overlap between the precursor’s π states along the polymer, considered as the fingerprint of a successful polymerization. Thus, these results establish the first spectroscopic evidence that atomically precise carbon-based nanostructures can readily be synthesized on top of a transition-metal oxide surface, opening the prospect for the bottom-up production of novel molecule–semiconductor devices. PMID:27115554

  6. Electrosprayed metal oxide semiconductor films for sensitive and selective detection of hydrogen sulfide.

    PubMed

    Ghimbeu, Camelia Matei; Lumbreras, Martine; Schoonman, Joop; Siadat, Maryam

    2009-01-01

    Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO(2)), tungsten oxide (WO(3)) and indium oxide (In(2)O(3)) were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD). The morphology studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM) shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD) proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H(2)S (10 ppm) at low operating temperatures (100 and 200 °C) and the best response in terms of R(air)/R(gas) is given by Cu-SnO(2) films (2500) followed by WO(3) (1200) and In(2)O(3) (75). Moreover, all the films exhibit no cross-sensitivity to other reducing (SO(2)) or oxidizing (NO(2)) gases. PMID:22291557

  7. Highly mobile and reactive state of hydrogen in metal oxide semiconductors at room temperature

    NASA Astrophysics Data System (ADS)

    Chen, Wan Ping; He, Ke Feng; Wang, Yu; Chan, Helen Lai Wah; Yan, Zijie

    2013-11-01

    Hydrogen in metal oxides usually strongly associates with a neighboring oxygen ion through an O-H bond and thus displays a high stability. Here we report a novel state of hydrogen with unusually high mobility and reactivity in metal oxides at room temperature. We show that freshly doped hydrogen in Nb2O5 and WO3 polycrystals via electrochemical hydrogenation can reduce Cu2+ ions into Cu0 if the polycrystals are immersed in a CuSO4 solution, while this would not happen if the hydrogenated polycrystals have been placed in air for several hours before the immersion. Time-dependent studies of electrochemically hydrogenated rutile single crystals reveal two distinct states of hydrogen: one as protons covalently bonded to oxygen ions, while the other one is highly unstable with a lifetime of just a few hours. Observation of this mobile and reactive state of hydrogen will provide new insight into numerous moderate and low temperature interactions between metal oxides and hydrogen.

  8. Single Event Effects (SEE) for Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

    NASA Technical Reports Server (NTRS)

    Lauenstein, Jean-Marie

    2011-01-01

    Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is complex, making rate prediction difficult SEGR mechanism has two main components: (1) Oxide damage-- Reduces field required for rupture (2) Epilayer response -- Creates transient high field across the oxide.

  9. Technology of GaAs metal-oxide-semiconductor solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M.

    1977-01-01

    The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

  10. Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

    NASA Astrophysics Data System (ADS)

    Martinez, Isidoro; Cascales, Juan P.; Lara, Antonio; Andres, Pablo; Aliev, Farkhad G.

    2015-03-01

    The time dependent transient lateral photovoltaic effect (T-LPE) has been studied with microsecond time resolution and with chopping frequencies in the kHz range, in lithographically patterned 21 nm thick, 5, 10 and 20 micron wide and 1500 micron long Co lines grown over naturally passivated p-type Si (100). We have observed a nearly linear dependence of the LPE transient response with the laser spot position. An unusual T-LPE dynamic response with a sign change in the laser-off stage has also been corroborated by numerical simulations. A qualitative explanation suggests a modification of the drift-diffusion model by including the influence of a local inductance. In addition, influence of anisotropic magnetoresistance of the Co line structure on dynamic response on T-LPE has been investigated. Specifically, we have experimentally investigated influence of the direction of the external magnetic field respect to the drift velocity of the photogenerated carriers on the T-LPE. We have observed notable dependence of the T-LPE on the magnetic field in the small field range (below 100 Oe), compatible with anisotropic magnetoresistance values. The strong influence of the magnetization alignment on the dynamic response of photogenerated carriers has been also observed through a phase sensitive lock-in experiment. These findings indicate that the microstructuring of the ferromagnetic line based position sensitive detectors (PSD) could improve their space-time resolution and add capability of magnetic field tuning of the main PSD characteristics.

  11. Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

    SciTech Connect

    Seo, Hyungtak; Cho, Young-Je; Bobade, Santosh M.; Park, Kyoung-Youn; Choi, Duck-Kyun; Kim, Jinwoo; Lee, Jaegab

    2010-05-31

    We report an investigation of two photon ultraviolet (UV) irradiation induced permanent n-type doping of amorphous InGaZnO (a-IGZO) at room temperature. The photoinduced excess electrons were donated to change the Fermi-level to a conduction band edge under the UV irradiation, owing to the hole scavenging process at the oxide interface. The use of optically n-doped a-IGZO channel increased the carrier density to approx10{sup 18} cm{sup -3} from the background level of 10{sup 16} cm{sup -3}, as well as the comprehensive enhancement upon UV irradiation of a-IGZO thin film transistor parameters, such as an on-off current ratio at approx10{sup 8} and field-effect mobility at 22.7 cm{sup 2}/V s.

  12. Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

    SciTech Connect

    Shen, Xiao; Dhar, Sarit; Pantelides, Sokrates T.

    2015-04-06

    MOSFETs based on wide-band-gap semiconductors are suitable for operation at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated, resulting in device degradation. Recently, significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150 °C. Here, we report first-principles calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO{sub 2} by which the vacancy transforms into a structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.

  13. Genomagnetic Electrochemical Biosensors

    NASA Astrophysics Data System (ADS)

    Wang, Joseph; Erdem, Arzum

    The use of nucleic acid technologies has significantly improved preparation and diagnostic procedures in life sciences. Nucleic acid layers combined with electrochemical or optical transducers produce a new kind of affinity biosensors as DNA Biosensor for small molecular weight molecules. Electrochemical DNA biosensors are attractive devices for converting the hybridization event into an analytical signal for obtaining sequence-specific information in connection with clinical, environmental or forensic investigations. DNA hybridization biosensors, based on electrochemical transduction of hybridization, couple the high specificity of hybridization reactions with the excellent sensitivity and portability of electrochemical transducers. The main goal in all researches is to design DNA biosensors for preparing a basis for the future DNA microarray system. DNA chip has now become a powerful tool in biological research, however the real clinic assay is still under development. Recently, there has been a great interest to the magnetic beads and/or nanoparticles labelled with metals such as gold, cadmium, silver, etc. for designing of novel electrochemical DNA biosensor approaches resulting in efficient separation. The attractive features of this technology include simple approach, rapid results, multi-analyte detection, low-cost per measurument, stable, and non-hazardous reagents, and reduced waste handling. Some of these new approaches and applications of the electrochemical DNA biosensors based on magnetic beads and its combining with nanoparticles labelled with metals are described and discussed.

  14. Introduction to biosensors

    PubMed Central

    Bhalla, Nikhil; Jolly, Pawan; Formisano, Nello

    2016-01-01

    Biosensors are nowadays ubiquitous in biomedical diagnosis as well as a wide range of other areas such as point-of-care monitoring of treatment and disease progression, environmental monitoring, food control, drug discovery, forensics and biomedical research. A wide range of techniques can be used for the development of biosensors. Their coupling with high-affinity biomolecules allows the sensitive and selective detection of a range of analytes. We give a general introduction to biosensors and biosensing technologies, including a brief historical overview, introducing key developments in the field and illustrating the breadth of biomolecular sensing strategies and the expansion of nanotechnological approaches that are now available. PMID:27365030

  15. Introduction to biosensors.

    PubMed

    Bhalla, Nikhil; Jolly, Pawan; Formisano, Nello; Estrela, Pedro

    2016-06-30

    Biosensors are nowadays ubiquitous in biomedical diagnosis as well as a wide range of other areas such as point-of-care monitoring of treatment and disease progression, environmental monitoring, food control, drug discovery, forensics and biomedical research. A wide range of techniques can be used for the development of biosensors. Their coupling with high-affinity biomolecules allows the sensitive and selective detection of a range of analytes. We give a general introduction to biosensors and biosensing technologies, including a brief historical overview, introducing key developments in the field and illustrating the breadth of biomolecular sensing strategies and the expansion of nanotechnological approaches that are now available. PMID:27365030

  16. BIOSENSORS FOR ENVIRONMENTAL APPLICATIONS

    EPA Science Inventory

    A review, with 19 references, is given on challenges and possible opportunities for the development of biosensors for environmental monitoring applications. The high cost and slow turnaround times typically associated with the measurement of regulated pollutants clearly indicates...

  17. Triggered optical biosensor

    DOEpatents

    Song, Xuedong; Swanson, Basil I.

    2001-10-02

    An optical biosensor is provided for the detection of a multivalent target biomolecule, the biosensor including a substrate having a bilayer membrane thereon, a recognition molecule situated at the surface, the recognition molecule capable of binding with the multivalent target biomolecule, the recognition molecule further characterized as including a fluorescence label thereon and as being movable at the surface and a device for measuring a fluorescence change in response to binding between the recognition molecule and the multivalent target biomolecule.

  18. Complementary and Alternative Medicine.

    PubMed

    Quezada, Sandra M; Briscoe, Jessica; Cross, Raymond K

    2016-06-01

    Inflammatory bowel disease is a complex, chronic, multifactorial inflammatory disorder of the digestive tract. Standard therapies include immunosuppressive and biological treatments, but there is increasing interest in the potential benefit of complementary and alternative medicine for the treatment of inflammatory bowel disease. Given the high prevalence of use of complementary and alternative medicine among inflammatory bowel disease patients, gastroenterologists must remain knowledgeable regarding the risks and benefits of these treatment options. This article reviews the updated scientific data on the use of biologically based complementary and alternative therapies for the treatment of inflammatory bowel disease. PMID:27057686

  19. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

    PubMed

    Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

    2015-08-12

    For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics. PMID:26189702

  20. Complementary and Integrative Therapies

    MedlinePlus

    ... correctly • Supplement is free of harmful contents like pesticides and heavy metals (such as lead, arsenic or ... 1-888-644-6226 http://nccam.nih.gov Natural Medicines Information on complementary therapies http://naturaldatabase.therapeuticresearch. ...

  1. Fiber optic choline biosensor

    NASA Astrophysics Data System (ADS)

    Wang, Hong; Cao, Xiaojian; Jia, Ke; Chai, Xueting; Lu, Hua; Lu, Zuhong

    2001-10-01

    A fiber optic fluorescence biosensor for choline is introduced in this paper. Choline is an important neurotransmitter in mammals. Due to the growing needs for on-site clinical monitoring of the choline, much effect has been devoted to develop choline biosensors. Fiber-optic fluorescence biosensors have many advantages, including miniaturization, flexibility, and lack of electrical contact and interference. The choline fiber-optic biosensor we designed implemented a bifurcated fiber to perform fluorescence measurements. The light of the blue LED is coupled into one end of the fiber as excitation and the emission spectrum from sensing film is monitored by fiber-spectrometer (S2000, Ocean Optics) through the other end of the fiber. The sensing end of the fiber is coated with Nafion film dispersed with choline oxidase and oxygen sensitive luminescent Ru(II) complex (Tris(2,2'-bipyridyl)dichlororuthenium(II), hexahydrate). Choline oxidase catalyzes the oxidation of choline to betaine and hydrogen peroxide while consuming oxygen. The fluorescence intensity of oxygen- sensitive Ru(II) are related to the choline concentration. The response of the fiber-optic sensor in choline solution is represented and discussed. The result indicates a low-cost, high-performance, portable choline biosensor.

  2. A liquid-crystal-based DNA biosensor for pathogen detection

    NASA Astrophysics Data System (ADS)

    Khan, Mashooq; Khan, Abdur Rahim; Shin, Jae-Ho; Park, Soo-Young

    2016-03-01

    A liquid-crystal (LC)-filled transmission electron microscopy (TEM) grid cell coated with the cationic surfactant dodecyltrimethylammonium bromide (DTAB), to which a single-stranded deoxyribonucleic acid probe (ssDNAprobe) was adsorbed at the LC/aqueous interface (TEMDTAB/DNA), was applied for the highly specific detection of target DNA molecules. The DTAB-coated E7 (used LC mixture) in the TEM grid (TEMDTAB) exhibited a homeotropic orientation, and changed to a planar orientation upon adsorption of the ssDNAprobe. The TEMDTAB/DNA was then exposed to complementary (target) ssDNA, which resulted in a planar-to-homeotropic configurational change of E7 that could be observed through a polarized optical microscope under crossed polarizers. The optimum adsorption density (2 μM) of ssDNAprobe enabled the detection of ≥0.05 nM complementary ssDNA. This TEMDTAB/DNA biosensor could differentiate complementary ssDNA from mismatched ssDNA as well as double-stranded DNA. It also successfully detected the genomic DNAs of the bacterium Erwinia carotovora and the fungi Rhazictonia solani. Owe to the high specificity, sensitivity, and label-free detection, this biosensor may broaden the applications of LC-based biosensors to pathogen detection.

  3. A liquid-crystal-based DNA biosensor for pathogen detection.

    PubMed

    Khan, Mashooq; Khan, Abdur Rahim; Shin, Jae-Ho; Park, Soo-Young

    2016-01-01

    A liquid-crystal (LC)-filled transmission electron microscopy (TEM) grid cell coated with the cationic surfactant dodecyltrimethylammonium bromide (DTAB), to which a single-stranded deoxyribonucleic acid probe (ssDNAprobe) was adsorbed at the LC/aqueous interface (TEMDTAB/DNA), was applied for the highly specific detection of target DNA molecules. The DTAB-coated E7 (used LC mixture) in the TEM grid (TEMDTAB) exhibited a homeotropic orientation, and changed to a planar orientation upon adsorption of the ssDNAprobe. The TEMDTAB/DNA was then exposed to complementary (target) ssDNA, which resulted in a planar-to-homeotropic configurational change of E7 that could be observed through a polarized optical microscope under crossed polarizers. The optimum adsorption density (2 μM) of ssDNAprobe enabled the detection of ≥0.05 nM complementary ssDNA. This TEMDTAB/DNA biosensor could differentiate complementary ssDNA from mismatched ssDNA as well as double-stranded DNA. It also successfully detected the genomic DNAs of the bacterium Erwinia carotovora and the fungi Rhazictonia solani. Owe to the high specificity, sensitivity, and label-free detection, this biosensor may broaden the applications of LC-based biosensors to pathogen detection. PMID:26940532

  4. A liquid-crystal-based DNA biosensor for pathogen detection

    PubMed Central

    Khan, Mashooq; Khan, Abdur Rahim; Shin, Jae-Ho; Park, Soo-Young

    2016-01-01

    A liquid-crystal (LC)-filled transmission electron microscopy (TEM) grid cell coated with the cationic surfactant dodecyltrimethylammonium bromide (DTAB), to which a single-stranded deoxyribonucleic acid probe (ssDNAprobe) was adsorbed at the LC/aqueous interface (TEMDTAB/DNA), was applied for the highly specific detection of target DNA molecules. The DTAB-coated E7 (used LC mixture) in the TEM grid (TEMDTAB) exhibited a homeotropic orientation, and changed to a planar orientation upon adsorption of the ssDNAprobe. The TEMDTAB/DNA was then exposed to complementary (target) ssDNA, which resulted in a planar-to-homeotropic configurational change of E7 that could be observed through a polarized optical microscope under crossed polarizers. The optimum adsorption density (2 μM) of ssDNAprobe enabled the detection of ≥0.05 nM complementary ssDNA. This TEMDTAB/DNA biosensor could differentiate complementary ssDNA from mismatched ssDNA as well as double-stranded DNA. It also successfully detected the genomic DNAs of the bacterium Erwinia carotovora and the fungi Rhazictonia solani. Owe to the high specificity, sensitivity, and label-free detection, this biosensor may broaden the applications of LC-based biosensors to pathogen detection. PMID:26940532

  5. High-sensitive label-free biosensors based on single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Maehashi, Kenzo; Matsumoto, Kazuhiko

    2006-02-01

    DNA hybridization has sensitively been detected using carbon nanotube field-effect transistors (CNTFETs) in real time. After full-complementary DNA introduction, the source-drain current gradually increased while monitoring in real time. Full-complementary DNA with concentration as low as 1 fmol/L solution could be effectively detected. Our CNTFET-based biochip is a promising candidate for the development of an integrated, high-throughput, multiplexed DNA biosensor for medical, forensic and environmental diagnostics.

  6. Recent Trends in Biosensors

    NASA Astrophysics Data System (ADS)

    Karube, Isao

    The determination of organic compounds in foods is very important in food industries. A various compounds are contained in foods, selective determination methods are required for food processing and analysis. Electrochemical monitoring devices (biosensors) employing immobilized biocatalysts such as immobilized enzymes, organelles, microorganisms, and tissue have definite advantages. The enzyme Sensors consisted of immobilized enzymes and electrochemical devices. Enzyme sensors could be used for the determination of sugars, amino acids, organic acids, alcohols, lipids, nucleic acid derivatives, etc.. Furthermore, a multifunctional biosensor for the determination of several compounds has been developed for food processing. On the other hand, microbial sensors consisted of immobilized microorganisms and electrodes have been used for industrial and environmental analysis. Microbial sensors were applied for the determination of sugars, organic acids, alcohols, amino acids, mutagens, me thane, ammonia, and BOD. Furthermore, micro-biosensors using immobilized biocatalysts and ion sensitive field effect transistor or microelectrodes prepared by silicon fabrication technologies have been developed for medical ap. plication and food processing. This review summarizes the design and application of biosensors.

  7. Biosensors for bioprocesses

    SciTech Connect

    Van Brunt, J.

    1987-05-01

    The advent of biosensors has been touted as the marriage of the century - a marriage of microelectronics and biotechnology. But exactly what is a biosensor. Actually, the term is used interchangeably for two sometimes very different classes of devices - those that measure biological molecules and particles and those that use biomolecules as part of the sensing mechanism. The basic conceptual design of a biosensor is simple: a biological receptor is coupled to an electronic tranducer in such a way that the transducer converts biochemical activity at one end into electrical activity at the other. The biological component is usually an enzyme (for selective chemical catalysis) or an antibody (for highly selective binding), although cell membrane receptors, tissue slices, and microbial cells are used as well. The electronic component measures voltage (potentiometric), current (amperometric), light, sound, temperaure, or mass (piezoelectric). Biosensors display several unique features that make them especially attractive. They are small. They are simple to use many procedures require one step, no additional reagents, and no radioactivity. They are portable. And they are inexpensive and perfect for data processing.

  8. Mutually Exclusive, Complementary, or . . .

    ERIC Educational Resources Information Center

    Schloemer, Cathy G.

    2016-01-01

    Whether students are beginning their study of probability or are well into it, distinctions between complementary sets and mutually exclusive sets can be confusing. Cathy Schloemer writes in this article that for years she used typical classroom examples but was not happy with the student engagement or the level of understanding they produced.…

  9. Complementary Coffee Cups

    ERIC Educational Resources Information Center

    Banchoff, Thomas

    2006-01-01

    What may have been the birth of a new calculus problem took place when the author noticed that two coffee cups, one convex and one concave, fit nicely together, and he wondered which held more coffee. The fact that their volumes were about equal led to the topic of this article: complementary surfaces of revolution with equal volumes.

  10. All-ion-implantation process for integrated circuits

    NASA Technical Reports Server (NTRS)

    Woo, D. S.

    1979-01-01

    Simpler than diffusion fabrication, ion bombardment produces complementary-metal-oxide-semiconductor / silicon-on-sapphire (CMOS/SOS) circuits that are one-third faster. Ion implantation simplifies the integrated circuit fabrication procedure and produces circuits with uniform characteristics.

  11. A novel self-powered and sensitive label-free DNA biosensor in microbial fuel cell.

    PubMed

    Asghary, Maryam; Raoof, Jahan Bakhsh; Rahimnejad, Mostafa; Ojani, Reza

    2016-08-15

    In this work, a novel self-powered, sensitive, low-cost, and label-free DNA biosensor is reported by applying a two-chambered microbial fuel cell (MFC) as a power supply. A graphite electrode and an Au nanoparticles modified graphite electrode (AuNP/graphite electrode) were used as anode and cathode in the MFC system, respectively. The active biocatalyst in the anodic chamber was a mixed culture of microorganisms. The sensing element of the biosensor was fabricated by the well-known Au-thiol binding the ssDNA probe on the surface of an AuNP/graphite cathode. Electrons produced by microorganisms were transported from the anode to the cathode through an external circuit, which could be detected by the terminal multi-meter detector. The difference between power densities of the ssDNA probe modified cathode in the absence and presence of complementary sequence served as the detection signal of the DNA hybridization with detection limit of 3.1nM. Thereafter, this biosensor was employed for diagnosis and determination of complementary sequence in a human serum sample. The hybridization specificity studies further revealed that the developed DNA biosensor could distinguish fully complementary sequences from one-base mismatched and non-complementary sequences. PMID:27085948

  12. Thiol- and biotin-labeled probes for oligonucleotide quartz crystal microbalance biosensors of microalga alexandrium minutum.

    PubMed

    Lazerges, Mathieu; Perrot, Hubert; Rabehagasoa, Niriniony; Compère, Chantal

    2012-01-01

    Two quartz crystal microbalance oligonucleotide biosensors of a toxic microalga gene sequence (Alexandrium Minutum) have been designed. Grafting on a gold surface of 20-base thiol- or biotin-labeled probe, and selective hybridization with the complementary 20-base target, have been monitored in situ with a 27 MHz quartz crystal microbalance under controlled hydrodynamic conditions. The frequency of the set up is stable to within a few hertz, corresponding to the nanogram scale, for three hour experiments. DNA recognition by the two biosensors is efficient and selective. Hybridization kinetic curves indicate that the biosensor designed with the thiol-labeled probe is more sensitive, and that the biosensor designed with the biotin-labeled probe has a shorter time response and a higher hybridization efficiency. PMID:25585927

  13. Thiol- and Biotin-Labeled Probes for Oligonucleotide Quartz Crystal Microbalance Biosensors of Microalga Alexandrium Minutum

    PubMed Central

    Lazerges, Mathieu; Perrot, Hubert; Rabehagasoa, Niriniony; Compère, Chantal

    2012-01-01

    Two quartz crystal microbalance oligonucleotide biosensors of a toxic microalga gene sequence (Alexandrium Minutum) have been designed. Grafting on a gold surface of 20-base thiol- or biotin-labeled probe, and selective hybridization with the complementary 20-base target, have been monitored in situ with a 27 MHz quartz crystal microbalance under controlled hydrodynamic conditions. The frequency of the set up is stable to within a few hertz, corresponding to the nanogram scale, for three hour experiments. DNA recognition by the two biosensors is efficient and selective. Hybridization kinetic curves indicate that the biosensor designed with the thiol-labeled probe is more sensitive, and that the biosensor designed with the biotin-labeled probe has a shorter time response and a higher hybridization efficiency. PMID:25585927

  14. Comparison of a prototype magnetoresistive biosensor to standard fluorescent DNA detection.

    PubMed

    Schotter, J; Kamp, P B; Becker, A; Pühler, A; Reiss, G; Brückl, H

    2004-05-15

    We present a comparative analysis of a magnetoresistive biosensor to standard fluorescent DNA detection. The biosensor consists of giant magnetoresistive (GMR) type Cu/Ni(80)Fe(20) multilayers in the second antiferromagnetic coupling maximum. Each of the 206 elements of the magnetoresistive biosensor is patterned into a spiral-shaped line that can cover the area of a typical DNA spot (70 microm diameter). The probe DNA is assembled on top of the sensor elements in different concentrations ranging from 16 pg/microl to 10 ng/microl. Complementary biotin-labeled analyte DNA is hybridized to the probe DNA at a concentration of 10 ng/microl. A number of different commercially available magnetic microspheres are investigated to determine the most appropriate markers. The experimental comparison shows that the relative sensitivity of the magnetoresistive biosensor is superior to the fluorescent detection at low probe DNA concentrations. PMID:15046745

  15. Nanomaterial-Based Electrochemical Biosensors and Bioassays

    SciTech Connect

    Liu, Guodong; Mao, Xun; Gurung, Anant; Baloda, Meenu; Lin, Yuehe; He, Yuqing

    2010-08-31

    This book chapter summarizes the recent advance in nanomaterials for electrochemical biosensors and bioassays. Biofunctionalization of nanomaterials for biosensors fabrication and their biomedical applications are discussed.

  16. High-density fiber optic biosensor arrays

    NASA Astrophysics Data System (ADS)

    Epstein, Jason R.; Walt, David R.

    2002-02-01

    Novel approaches are required to coordinate the immense amounts of information derived from diverse genomes. This concept has influenced the expanded role of high-throughput DNA detection and analysis in the biological sciences. A high-density fiber optic DNA biosensor was developed consisting of oligonucleotide-functionalized, 3.1 mm diameter microspheres deposited into the etched wells on the distal face of a 500 micrometers imaging fiber bundle. Imaging fiber bundles containing thousands of optical fibers, each associated with a unique oligonucleotide probe sequence, were the foundation for an optically connected, individually addressable DNA detection platform. Different oligonucleotide-functionalized microspheres were combined in a stock solution, and randomly dispersed into the etched wells. Microsphere positions were registered from optical dyes incorporated onto the microspheres. The distribution process provided an inherent redundancy that increases the signal-to-noise ratio as the square root of the number of sensors examined. The representative amount of each probe-type in the array was dependent on their initial stock solution concentration, and as other sequences of interest arise, new microsphere elements can be added to arrays without altering the existing detection capabilities. The oligonucleotide probe sequences hybridize to fluorescently-labeled, complementary DNA target solutions. Fiber optic DNA microarray research has included DNA-protein interaction profiles, microbial strain differentiation, non-labeled target interrogation with molecular beacons, and single cell-based assays. This biosensor array is proficient in DNA detection linked to specific disease states, single nucleotide polymorphism (SNP's) discrimination, and gene expression analysis. This array platform permits multiple detection formats, provides smaller feature sizes, and enables sensor design flexibility. High-density fiber optic microarray biosensors provide a fast

  17. Conducting polymer based electrochemical biosensors.

    PubMed

    Aydemir, Nihan; Malmström, Jenny; Travas-Sejdic, Jadranka

    2016-03-28

    Conducting polymer (CP)-based electrochemical biosensors have gained great attention as such biosensor platforms are easy and cost-effective to fabricate, and provide a direct electrical readout for the presence of biological analytes with high sensitivity and selectivity. CP materials themselves are both sensing elements and transducers of the biological recognition event at the same time, simplifying sensor designs. This review summarizes the advances in electrochemical biosensors based on CPs. Recognition probe immobilisation techniques, transduction mechanisms and detection of various target biomolecules have been discussed in detail. Efforts to miniaturize CP-based electrochemical biosensors and fabrication of sensor arrays are also briefly reviewed. PMID:26948182

  18. Biosensors based on DNA-Functionalized Graphene

    NASA Astrophysics Data System (ADS)

    Vishnubhotla, Ramya; Ping, Jinglei; Vrudhula, Amey; Johnson, A. T. Charlie

    Since its discovery, graphene has been used for sensing applications due to its outstanding electrical properties and biocompatibility. Here, we demonstrate the capabilities of field effect transistors (FETs) based on CVD-grown graphene functionalized with commercially obtained DNA oligomers and aptamers for detection of various biomolecular targets (e.g., complementary DNA and small molecule drug targets). Graphene FETs were created with a scalable photolithography process that produces arrays consisting of 50-100 FETs with a layout suitable for multiplexed detection of four molecular targets. FETs were characterized via AFM to confirm the presence of the aptamer. From the measured electrical characteristics, it was determined that binding of molecular targets by the DNA chemical recognition element led to a reproducible, concentration-dependent shift in the Dirac voltage. This biosensor class is potentially suitable for applications in drug detection. This work is funded by NIH through the Center for AIDS Research at the University of Pennsylvania.

  19. Carbon nanotube biosensors

    PubMed Central

    Tîlmaciu, Carmen-Mihaela; Morris, May C.

    2015-01-01

    Nanomaterials possess unique features which make them particularly attractive for biosensing applications. In particular, carbon nanotubes (CNTs) can serve as scaffolds for immobilization of biomolecules at their surface, and combine several exceptional physical, chemical, electrical, and optical characteristics properties which make them one of the best suited materials for the transduction of signals associated with the recognition of analytes, metabolites, or disease biomarkers. Here we provide a comprehensive review on these carbon nanostructures, in which we describe their structural and physical properties, functionalization and cellular uptake, biocompatibility, and toxicity issues. We further review historical developments in the field of biosensors, and describe the different types of biosensors which have been developed over time, with specific focus on CNT-conjugates engineered for biosensing applications, and in particular detection of cancer biomarkers. PMID:26579509

  20. Carbon Nanotube Biosensors

    NASA Astrophysics Data System (ADS)

    Tilmaciu, Carmen-Mihaela; Morris, May

    2015-10-01

    Nanomaterials possess unique features which make them particularly attractive for biosensing applications. In particular Carbon Nanotubes (CNTs) can serve as scaffolds for immobilization of biomolecules at their surface, and combine several exceptional physical, chemical, electrical and optical characteristics properties which make them one of the best suited materials for the transduction of signals associated with the recognition of analytes, metabolites or disease biomarkers. Here we provide a comprehensive review on these carbon nanostructures, in which we will describe their structural and physical properties, discuss functionalization and cellular uptake, biocompatibility and toxicity issues. We further review historical developments in the field of biosensors, and describe the different types of biosensors which have been developed over time, with specific focus on CNT-conjugates engineered for biosensing applications, and in particular detection of cancer biomarkers.

  1. Towards optoelectronic urea biosensors.

    PubMed

    Pokrzywnicka, Marta; Koncki, Robert; Tymecki, Łukasz

    2015-03-01

    Integration of immobilized enzymes with light-emitting diodes (LEDs) leads to the development of optoelectronic enzyme-based biosensors. In this work, urease, used as a model enzyme, immobilized in the form of an open-tubular microbioreactor or biosensing membrane that has been integrated with two red LEDs. It forms complete, fiberless, miniaturized, and extremely economic biooptoelectronic devices useful for nonstationary measurements under flow analysis conditions. Both enzyme-based biodevices, operating according to the paired emitter detector diode (PEDD) principle, allow relatively fast, highly sensitive, and well-reproducible urea detection in the millimolar range of concentrations. Potential analytical applications of the developed urea bioPEDDs have been announced. Both presented constructions will be easily adapted for the development of other optoelectronic biosensors exploring various enzyme-based schemes of biodetection. PMID:25619983

  2. Complementary and alternative medicine.

    PubMed

    Filshie, Jacqueline; Rubens, Carolyn N J

    2006-03-01

    Thirty years ago, the integration of complementary medicine into cancer care almost was dismissed as quackery. Today, a whole range of complementary and alternative medicine (CAM) techniques have been integrated into the management of cancer, which are often of benefit to patients, when conventional treatment is deemed to have failed or caused intolerable side effects. Health care workers need to inquire about the use of CAM in their patients routinely in a sensitive and nonjudgmental way, and may need to advise patients to stop certain therapies. Yet in advanced cancer, a sensible balance needs to be struck between fear about adverse effects and interactions and the importance of making the remaining weeks/days/months as comfortable and enjoyable as possible. PMID:16487897

  3. Complementary medicine for depression.

    PubMed

    Pilkington, Karen; Rampes, Hagen; Richardson, Janet

    2006-11-01

    Surveys have demonstrated that complementary medicine use for depression is widespread, although patterns of use vary. A series of systematic reviews provide a summary of the current evidence for acupuncture, aromatherapy and massage, homeopathy, meditation, reflexology, herbal medicine, yoga, and several dietary supplements and relaxation techniques. The quantity and quality of individual studies vary widely, but research interest in complementary therapies is increasing, particularly in herbal and nutritional products. Major questions are still to be answered with respect to the effectiveness and appropriate role of these therapies in the management of depression. Areas for further research and some of the potential challenges to research design are discussed. Finally, several ongoing developments in information provision on this topic are highlighted. PMID:17144787

  4. Alternative/complementary therapies.

    PubMed

    Freeman, J W; Landis, J

    1997-02-01

    The national trends and our regional experience of the utilization of complementary therapies suggest that a significant number of our patients will continue to employ remedies that are outside the mainstream of what has been defined as conventional Western medicine. The data obtained from our survey is very consistent with the national survey published in 1993. Indeed the national interest in alternative/complementary therapies seems to be growing. A recent newspaper article from Minneapolis noted that Allina, one of Minnesota's largest hospital and HMO systems, found, in a 1995 survey, that two-thirds of surveyed households had a least one member who had used some type of alternative or holistic care over the prior two year period. Certainly continued study of the safety and efficacy of alternative/complementary therapies is warranted. This work is being done on many fronts, including the Office of Alternative Medicine at the National Institutes of Health. A most important aspect of such investigations is to improve the understanding of why patients choose these unconventional remedies. For many patients, the answer is simple. They believe these alternative treatments work. For such patients, alternative therapies may constitute a practical way to move from the sterile "high tech" realm of traditional medicine to a more intimate, "high touch" intervention offered by non-physicians. In the end, physicians' most pressing mandate is "to be of use" to patients in their struggles with illness, disability, and impending death. None of us have all the answers, and the studies alluded to in this essay suggest that a significant segment of the population yearns for interventions that have been traditionally outside the practice of most physicians and nurses. The data from our survey corroborates the high utilization rate of alternative/complementary therapies, regionally and is consistent with national data. Our challenge, as caregivers, is to appropriately respond to the

  5. Micro-algal biosensors.

    PubMed

    Brayner, Roberta; Couté, Alain; Livage, Jacques; Perrette, Catherine; Sicard, Clémence

    2011-08-01

    Fighting against water pollution requires the ability to detect pollutants for example herbicides or heavy metals. Micro-algae that live in marine and fresh water offer a versatile solution for the construction of novel biosensors. These photosynthetic microorganisms are very sensitive to changes in their environment, enabling the detection of traces of pollutants. Three groups of micro-algae are described in this paper: chlorophyta, cyanobacteria, and diatoms. PMID:21626188

  6. Nanobiomaterials for Electrochemical Biosensors

    NASA Astrophysics Data System (ADS)

    Pumera, M.

    2007-08-01

    I will discuss main techniques and methods which use nanoscale materials for construction of electrochemical biosensors with emphasis on methods developed by myself and my coworkers. Described approaches include carbon nanotube based electrodes relying on double wall and multiwall carbon nanotubes, novel binding materials and mass production technology; and nanoscale materials as biomolecule tracers, including gold nanoparticles for DNA detection. Specific issues related to electrochemistry of nanoscale materials will be discussed. Various applications for genomic and proteomic analysis will be described.

  7. Thermoresponsive amperometric glucose biosensor.

    PubMed

    Pinyou, Piyanut; Ruff, Adrian; Pöller, Sascha; Barwe, Stefan; Nebel, Michaela; Alburquerque, Natalia Guerrero; Wischerhoff, Erik; Laschewsky, André; Schmaderer, Sebastian; Szeponik, Jan; Plumeré, Nicolas; Schuhmann, Wolfgang

    2016-03-01

    The authors report on the fabrication of a thermoresponsive biosensor for the amperometric detection of glucose. Screen printed electrodes with heatable gold working electrodes were modified by a thermoresponsive statistical copolymer [polymer I: poly(ω-ethoxytriethylenglycol methacrylate-co-3-(N,N-dimethyl-N-2-methacryloyloxyethyl ammonio) propanesulfonate-co-ω-butoxydiethylenglycol methacrylate-co-2-(4-benzoyl-phenoxy)ethyl methacrylate)] with a lower critical solution temperature of around 28 °C in aqueous solution via electrochemically induced codeposition with a pH-responsive redox-polymer [polymer II: poly(glycidyl methacrylate-co-allyl methacrylate-co-poly(ethylene glycol)methacrylate-co-butyl acrylate-co-2-(dimethylamino)ethyl methacrylate)-[Os(bpy)2(4-(((2-(2-(2-aminoethoxy)ethoxy)ethyl)amino)methyl)-N,N-dimethylpicolinamide)](2+)] and pyrroloquinoline quinone-soluble glucose dehydrogenase acting as biological recognition element. Polymer II bears covalently bound Os-complexes that act as redox mediators for shuttling electrons between the enzyme and the electrode surface. Polymer I acts as a temperature triggered immobilization matrix. Probing the catalytic current as a function of the working electrode temperature shows that the activity of the biosensor is dramatically reduced above the phase transition temperature of polymer I. Thus, the local modulation of the temperature at the interphase between the electrode and the bioactive layer allows switching the biosensor from an on- to an off-state without heating of the surrounding analyte solution. PMID:26702635

  8. Children and Complementary Health Approaches

    MedlinePlus

    ... Ewsichek What’s the Bottom Line? How much do we know about complementary health approaches for children? We ... about their effects and safety. 1 What do we know about the effectiveness of complementary health approaches ...

  9. A Note on Complementary Medicines

    MedlinePlus

    ... manipulation, and acupuncture are types of complementary and alternative medicine (CAM) currently being used by millions of Americans. ... conventional care. The National Center for Complementary and Alternative Medicine (NCCAM), part of NIH since 1999, funds and ...

  10. Cancer and Complementary Health Approaches

    MedlinePlus

    ... Legislation Advisory Council Job Opportunities All About NCCIH Health Topics A-Z # A B C D E ... from NCI at www.cancer.gov . About Complementary Health Approaches Complementary health approaches are a group of ...

  11. Fabrication of an electrochemical DNA-based biosensor for Bacillus cereus detection in milk and infant formula.

    PubMed

    Izadi, Zahra; Sheikh-Zeinoddin, Mahmoud; Ensafi, Ali A; Soleimanian-Zad, Sabihe

    2016-06-15

    This paper describes fabrication of a DNA-based Au-nanoparticle modified pencil graphite electrode (PGE) biosensor for detection of Bacillus cereus, causative agent of two types of food-borne disease, i.e., emetic and diarrheal syndrome. The sensing element of the biosensor was comprised of gold nanoparticles (GNPs) self-assembled with single-stranded DNA (ssDNA) of nheA gene immobilized with thiol linker on the GNPs modified PGE. The size, shape and dispersion of the GNPs were characterized by field emission scanning electron microscope (FESEM). Detection of B. cereus was carried out based on an increase in the charge transfer resistance (Rct) of the biosensor due to hybridization of the ss-DNA with target DNA. An Atomic force microscope (AFM) was used to confirm the hybridization. The biosensor sensitivity in pure cultures of B. cereus was found to be 10(0) colony forming units per milliliter (CFU/mL) with a detection limit of 9.4 × 10(-12) mol L(-1). The biosensor could distinguish complementary from mismatch DNA sequence. The proposed biosensor exhibited a rapid detection, low cost, high sensitivity to bacterial contamination and could exclusively and specifically detect the target DNA sequence of B. cereus from other bacteria that can be found in dairy products. Moreover, the DNA biosensor exhibited high reproducibility and stability, thus it may be used as a suitable biosensor to detect B. cereus and to become a portable system for food quality control. PMID:26896793

  12. A low cost color-based bacterial biosensor for measuring arsenic in groundwater.

    PubMed

    Huang, Chi-Wei; Wei, Chia-Cheng; Liao, Vivian Hsiu-Chuan

    2015-12-01

    Using arsenic (As) contaminated groundwater for drinking or irrigation has caused major health problems for humans around the world, raising a need to monitor As level efficiently and economically. This study developed a color-based bacterial biosensor which is easy-to-use and inexpensive for measuring As and could be complementary to current As detecting techniques. The arsR-lacZ recombinant gene cassette in nonpathogenic strain Escherichia coli DH5α was used in the color-based biosensor which could be observed by eyes or measured by spectrometer. The developed bacterial biosensor demonstrates a quantitative range from 10 to 500μgL(-1) of As in 3-h reaction time. Furthermore, the biosensor was able to successfully detect and estimate As concentration in groundwater sample by measuring optical density at 595nm (OD595). Among different storage methods used in this study, biosensor in liquid at 4°C showed the longest shelf life about 9d, and liquid storage at RT and cell pellet could also be stored for about 3-5d. In conclusion, this study showed that the As biosensor with reliable color signal and economical preservation methods is useful for rapid screening of As pollutant, providing the potential for large scale screening and better management strategies for environmental quality control. PMID:26092199

  13. Improved Biosensors for Soils

    NASA Astrophysics Data System (ADS)

    Silberg, J. J.; Masiello, C. A.; Cheng, H. Y.

    2014-12-01

    Microbes drive processes in the Earth system far exceeding their physical scale, affecting crop yields, water quality, the mobilization of toxic materials, and fundamental aspects of soil biogeochemistry. The tools of synthetic biology have the potential to significantly improve our understanding of microbial Earth system processes: for example, synthetic microbes can be be programmed to report on environmental conditions that stimulate greenhouse gas production, metal oxidation, biofilm formation, pollutant degradation, and microbe-plant symbioses. However, these tools are only rarely deployed in the lab. This research gap arises because synthetically programmed microbes typically report on their environment by producing molecules that are detected optically (e.g., fluorescent proteins). Fluorescent reporters are ideal for petri-dish applications and have fundamentally changed how we study human health, but their usefulness is quite limited in soils where detecting fluorescence is challenging. Here we describe the construction of gas-reporting biosensors, which release nonpolar gases that can be detected in the headspace of incubation experiments. These constructs can be used to probe microbial processes within soils in real-time noninvasive lab experiments. These biosensors can be combined with traditional omics-based approaches to reveal processes controlling soil microbial behavior and lead to improved environmental management decisions.

  14. Electrochemical biosensors and nanobiosensors.

    PubMed

    Hammond, Jules L; Formisano, Nello; Estrela, Pedro; Carrara, Sandro; Tkac, Jan

    2016-06-30

    Electrochemical techniques have great promise for low-cost miniaturised easy-to-use portable devices for a wide range of applications-in particular, medical diagnosis and environmental monitoring. Different techniques can be used for biosensing, with amperometric devices taking the central role due to their widespread application in glucose monitoring. In fact, glucose biosensing takes an approximately 70% share of the biosensor market due to the need for diabetic patients to monitor their sugar levels several times a day, making it an appealing commercial market.In this review, we present the basic principles of electrochemical biosensor devices. A description of the different generations of glucose sensors is used to describe in some detail the operation of amperometric sensors and how the introduction of mediators can enhance the performance of the sensors. Electrochemical impedance spectroscopy is a technique being increasingly used in devices due to its ability to detect variations in resistance and capacitance upon binding events. Novel advances in electrochemical sensors, due to the use of nanomaterials such as carbon nanotubes and graphene, are presented as well as future directions that the field is taking. PMID:27365037

  15. Multiplexed Biosensors for Mycotoxins.

    PubMed

    Maragos, Chris M

    2016-07-01

    Significant progress has been made in the development of biosensors that can be used to detect low-MW toxins produced by fungi (mycotoxins). The number of formats that have been investigated is impressive and is an indication of the importance attached to finding easy-to-use, accurate, and rapid methods for detecting these toxins in commodities and foods. This review explores the details of multiplexed biosensors based on many formats, including multiplexed immunoassays, suspension arrays, membrane-based devices (flow-through and immunochromatographic), and planar microarrays. Each assay format has its own strengths and areas that need improvement. Certain formats, such as multiplexed immunochromatographic devices, are well developed and relatively easy to use, and in some cases, commercial products are being sold. Others, such as the suspension arrays and microarrays, are laboratory-based assays that, although more complicated, are also more amenable to a larger scale of multiplexing. The diversity of such efforts and the multitude of formats under investigation suggest that multiple solutions will be found to satisfy the need for multiplexed toxin detection. PMID:27455928

  16. Electrochemical biosensors and nanobiosensors

    PubMed Central

    Hammond, Jules L.; Formisano, Nello; Carrara, Sandro; Tkac, Jan

    2016-01-01

    Electrochemical techniques have great promise for low-cost miniaturised easy-to-use portable devices for a wide range of applications–in particular, medical diagnosis and environmental monitoring. Different techniques can be used for biosensing, with amperometric devices taking the central role due to their widespread application in glucose monitoring. In fact, glucose biosensing takes an approximately 70% share of the biosensor market due to the need for diabetic patients to monitor their sugar levels several times a day, making it an appealing commercial market. In this review, we present the basic principles of electrochemical biosensor devices. A description of the different generations of glucose sensors is used to describe in some detail the operation of amperometric sensors and how the introduction of mediators can enhance the performance of the sensors. Electrochemical impedance spectroscopy is a technique being increasingly used in devices due to its ability to detect variations in resistance and capacitance upon binding events. Novel advances in electrochemical sensors, due to the use of nanomaterials such as carbon nanotubes and graphene, are presented as well as future directions that the field is taking. PMID:27365037

  17. Complementary Barrier Infrared Detector

    NASA Technical Reports Server (NTRS)

    Ting, David Z.; Bandara, Sumith V.; Hill, Cory J.; Gunapala, Sarath D.

    2009-01-01

    The complementary barrier infrared detector (CBIRD) is designed to eliminate the major dark current sources in the superlattice infrared detector. The concept can also be applied to bulk semiconductor- based infrared detectors. CBIRD uses two different types of specially designed barriers: an electron barrier that blocks electrons but not holes, and a hole barrier that blocks holes but not electrons. The CBIRD structure consists of an n-contact, a hole barrier, an absorber, an electron barrier, and a p-contact. The barriers are placed at the contact-absorber junctions where, in a conventional p-i-n detector structure, there normally are depletion regions that produce generation-recombination (GR) dark currents due to Shockley-Read- Hall (SRH) processes. The wider-bandgap complementary barriers suppress G-R dark current. The barriers also block diffusion dark currents generated in the diffusion wings in the neutral regions. In addition, the wider gap barriers serve to reduce tunneling dark currents. In the case of a superlattice-based absorber, the superlattice itself can be designed to suppress dark currents due to Auger processes. At the same time, the barriers actually help to enhance the collection of photo-generated carriers by deflecting the photo-carriers that are diffusing in the wrong direction (i.e., away from collectors) and redirecting them toward the collecting contacts. The contact layers are made from materials with narrower bandgaps than the barriers. This allows good ohmic contacts to be made, resulting in lower contact resistances. Previously, THALES Research and Technology (France) demonstrated detectors with bulk InAsSb (specifically InAs0.91Sb0.09) absorber lattice-matched to GaSb substrates. The absorber is surrounded by two wider bandgap layers designed to minimize impedance to photocurrent flow. The wide bandgap materials also serve as contacts. The cutoff wavelength of the InAsSb absorber is fixed. CBIRD may be considered as a modified

  18. Diagnosis and complementary examinations.

    PubMed

    Menghini, Moreno; Duncan, Jacque L

    2014-01-01

    Development of neuroprotective therapies requires an understanding of the mechanisms of retinal degeneration and a way to monitor response to treatment. With the increasing availability of genetic testing, precise characterization of the retinal degeneration phenotype is essential. This chapter covers standard and innovative diagnostic techniques and complementary examinations needed for the evaluation and treatment of retinal degenerative diseases. It aims to provide an overview of functional and structural diagnostic tools for the evaluation of retinal degenerative diseases, but is not intended as a comprehensive reference. Subjective assessment of visual function includes psychophysical tests, such as perimetry and microperimetry. Electrophysiology tests, such as the electroretinogram and electro-oculogram, are crucial in the assessment of retinal degenerative diseases and provide an objective assessment of global photoreceptor and retinal pigment epithelial cell function. Retinal structural measures are correlated with measures of retinal function to characterize the disease phenotype, including fundus photography using color, near-infrared, and autofluorescence imaging. Ocular perfusion can be assessed using fluorescein, indocyanine green, and noninvasive angiography. Optical coherence tomography provides information about retinal structure. Resolution of all images of retinal structure can be improved using adaptive optics, which permits visualization of individual photoreceptors and retinal pigment epithelial cells in the macula. PMID:24732761

  19. The electrophotonic silicon biosensor.

    PubMed

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E; Scullion, Mark G; Krauss, Thomas F; Johnson, Steven D

    2016-01-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale. PMID:27624590

  20. Noninvasive biosensor for hypoglycemia

    NASA Astrophysics Data System (ADS)

    Varadan, Vijay K.; Whitchurch, Ashwin K.; Sarukesi, Karunakaran

    2003-01-01

    Hypoglycemia-abnormal decrease in blood sugar- is a major obstacle in the management of diabetes and prevention of long-term complications, and it may impose serious effects on the brain, including impairment of memory and other cognitive functions. This is especially a concern in early childhood years when the nervous system is still developing. Hypoglycemic unawareness (in which the body"s normal ability to signal low blood sugar doesn"t work and an oncoming low blood sugar episode proceeds undetected) is a particularly frightening problem for many people with diabetes. Researchers have now uncovered evidence that repeated bouts of insulin-induced hypoglycemia can harm the brain over time, causing confusion, abnormal behavior, loss of consciousness, and seizures. Extreme cases have resulted in coma and death. In this paper, a non-invasive biosensor in a wrist watch along with a wireless data downloading system is proposed.