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Sample records for conduction band electron

  1. Femtosecond electron injection from optically populated donor states into the conduction band of semiconductors

    NASA Astrophysics Data System (ADS)

    Ernstorfer, Ralph; Toeben, Lars; Gundlach, Lars; Felber, Silke; Galoppini, Elena; Wei, Qian; Eichberger, Rainer; Storck, Winfried; Zimmermann, Carsten; Willig, Frank

    2003-12-01

    Unoccupied donor states can be populated via light absorption at the surface of semiconductor in the range of the conduction band levels. Hot electrons are injected from such donor states into the conduction band of a semiconductor on a femtosecond time scale. Such donor states can have rather different physical properties, e.g. unoccupied surface bands formed via reconstruction of the clean surface of a semiconductor in contact with ultra high vacuum or chromophores in molecules that are anchored at the surface of the semiconductor. The energy levels of the donor states with respect to the bands in the semiconductor can be determined with UPS and fs-2PPE. Experimental data on the energetics and dynamics of electron injection are presented for the two different cases of donor states mentioned above. The influence of vibrational wavepackets on electron injection is discussed for the case of a molecular donor state. Energy loss of the hot electrons injected into the semiconductor is measured with energy and time resolution employing femtosecond two-photon-photoemission.

  2. Electron emission from conduction band of heavily phosphorus doped diamond negative electron affinity surface

    NASA Astrophysics Data System (ADS)

    Yamada, Takatoshi; Masuzawa, Tomoaki; Mimura, Hidenori; Okano, Ken

    2016-02-01

    Hydrogen (H)-terminated surfaces of diamond have attracted significant attention due to their negative electron affinity (NEA), suggesting high-efficiency electron emitters. Combined with n-type doping technique using phosphorus (P) as donors, the unique NEA surface makes diamond a promising candidate for vacuum cold-cathode applications. However, high-electric fields are needed for the electron emission from the n-type doped diamond with NEA. Here we have clarified the electron emission mechanism of field emission from P-doped diamond having NEA utilizing combined ultraviolet photoelectron spectroscopy/field emission spectroscopy (UPS/FES). An UP spectrum has confirmed the NEA of H-terminated (1 1 1) surface of P-doped diamond. Despite the NEA, electron emission occurs only when electric field at the surface exceeds 4.2  ×  106 V cm-1. Further analysis by UPS/FES has revealed that the emitted energy level is shifted, indicating that the electron emission mechanism of n-type diamond having NEA surface does not follow a standard field emission theory, but is dominated by potential barrier formed within the diamond due to upward band bending. The reduction of internal barrier is the key to achieve high-efficiency electron emitters using P-doped diamond with NEA, of which application ranges from high-resolution electron spectroscopy to novel vacuum nanoelectronics devices.

  3. Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

    NASA Astrophysics Data System (ADS)

    Chen, Feng; Euaruksakul, Chanan; Liu, Zheng; Himpsel, F. J.; Liu, Feng; Lagally, Max G.

    2011-08-01

    Strain changes the band structure of semiconductors. We use x-ray absorption spectroscopy to study the change in the density of conduction band (CB) states when silicon is uniaxially strained along the [1 0 0] and [1 1 0] directions. High stress can be applied to silicon nanomembranes, because their thinness allows high levels of strain without fracture. Strain-induced changes in both the sixfold degenerate Δ valleys and the eightfold degenerate L valleys are determined quantitatively. The uniaxial deformation potentials of both Δ and L valleys are directly extracted using a strain tensor appropriate to the boundary conditions, i.e., confinement in the plane in the direction orthogonal to the straining direction, which correspond to those of strained CMOS in commercial applications. The experimentally determined deformation potentials match the theoretical predictions well. We predict electron mobility enhancement created by strain-induced CB modifications.

  4. Mechanical stress altered electron gate tunneling current and extraction of conduction band deformation potentials for germanium

    NASA Astrophysics Data System (ADS)

    Choi, Youn Sung; Lim, Ji-Song; Numata, Toshinori; Nishida, Toshikazu; Thompson, Scott E.

    2007-11-01

    Strain altered electron gate tunneling current is measured for germanium (Ge) metal-oxide-semiconductor devices with HfO2 gate dielectric. Uniaxial mechanical stress is applied using four-point wafer bending along [100] and [110] directions to extract both dilation and shear deformation potential constants of Ge. Least-squares fit to the experimental data results in Ξd and Ξu of -4.3±0.3 and 16.5±0.5 eV, respectively, which agree with theoretical calculations. The dominant mechanism for the strain altered electron gate tunneling current is a strain-induced change in the conduction band offset between Ge and HfO2. Tensile stress reduces the offset and increases the gate tunneling current for Ge while the opposite occurs for Si.

  5. Evidence of reduced surface electron-phonon scattering in the conduction band of Bi2Se3 by nonequilibrium ARPES

    NASA Astrophysics Data System (ADS)

    Crepaldi, A.; Cilento, F.; Ressel, B.; Cacho, C.; Johannsen, J. C.; Zacchigna, M.; Berger, H.; Bugnon, Ph.; Grazioli, C.; Turcu, I. C. E.; Springate, E.; Kern, K.; Grioni, M.; Parmigiani, F.

    2013-09-01

    The nature of the Dirac quasiparticles in topological insulators calls for a direct investigation of the electron-phonon scattering at the surface. By comparing time-resolved ARPES measurements of the topological insulator Bi2Se3 with different probing depths, we show that the relaxation dynamics of the electronic temperature of the conduction band is much slower at the surface than in the bulk. This observation suggests that surface phonons are less effective in cooling the electron gas in the conduction band.

  6. Time-Resolved IR-Absorption Spectroscopy of Hot-Electron Dynamics in Satellite and Upper Conduction Bands in GaP

    NASA Technical Reports Server (NTRS)

    Cavicchia, M. A.; Alfano, R. R.

    1995-01-01

    The relaxation dynamics of hot electrons in the X6 and X7 satellite and upper conduction bands in GaP was directly measured by femtosecond UV-pump-IR-probe absorption spectroscopy. From a fit to the induced IR-absorption spectra the dominant scattering mechanism giving rise to the absorption at early delay times was determined to be intervalley scattering of electrons out of the X7 upper conduction-band valley. For long delay times the dominant scattering mechanism is electron-hole scattering. Electron transport dynamics of the upper conduction band of GaP has been time resolved.

  7. Electron scattering in the Δ{sub 1} model of the conduction band of germanium single crystals

    SciTech Connect

    Luniov, S. V. Burban, O. V.; Nazarchuk, P. F.

    2015-05-15

    Electron scattering in the possible Δ{sub 1} models of the conduction band in germanium crystals formed by hydrostatic or uniaxial pressure is investigated. On the basis of the theory of anisotropic scattering, the temperature dependences of the anisotropy parameter of the relaxation times and electron mobility for these models under conditions of scattering at impurity ions, as well as at acoustic and intervalley phonons are obtained. Analysis of the temperature dependences indicates that, in the temperature range of 77–300 K, intervalley scattering becomes substantial. Only for the Δ{sub 1} model formed by uniaxial pressure along the crystallographic direction [100], the electron scattering at intervalley phonons, which correspond to the g transitions, is minor with respect to scattering at acoustic phonons (the intravalley scattering) and impurity ions.

  8. Effect of isopropyl alcohol on the surface localization and recombination of conduction-band electrons in Degussa P25 TiO sub 2. A pulse-radiolysis time-resolved microwave conductivity study. [Accelerated electrons

    SciTech Connect

    Warman, J.M.; Hass, M.P. de ); Pichat, P. ); Serpone, N. Concordia Univ., Montreal, Quebec )

    1991-10-31

    Conduction-band electrons, formed by pulse radiolysis of Degussa P25 TiO{sub 2} particles, have been monitored by time-resolved microwave conductivity and found to undergo equilibrium localization and eventual recombination at the particle surface. In the presence of isopropyl alcohol recombination is retarded due to surface hole scavenging. The particle bulk can then be pumped with mobile electrons, which survive for seconds.

  9. Electronic structure of the conduction band upon the formation of ultrathin fullerene films on the germanium oxide surface

    NASA Astrophysics Data System (ADS)

    Komolov, A. S.; Lazneva, E. F.; Gerasimova, N. B.; Panina, Yu. A.; Baramygin, A. V.; Zashikhin, G. D.

    2016-06-01

    The results of the investigation of the electronic structure of the conduction band in the energy range 5-25 eV above the Fermi level E F and the interfacial potential barrier upon deposition of aziridinylphenylpyrrolofullerene (APP-C60) and fullerene (C60) films on the surface of the real germanium oxide ((GeO2)Ge) have been presented. The content of the oxide on the (GeO2)Ge surface has been determined using X-ray photoelectron spectroscopy. The electronic properties have been measured using the very low energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode. The regularities of the change in the fine structure of total current spectra (FSTCS) with an increase in the thickness of the APP-C60 and C60 coatings to 7 nm have been investigated. A comparison of the structures of the FSTCS maxima for the C60 and APP-C60 films has made it possible to reveal the energy range (6-10 eV above the Fermi level E F) in which the energy states are determined by both the π* and σ* states and the FSTCS spectra have different structures of the maxima for the APP-C60 and unsubstituted C60 films. The formation of the interfacial potential barrier upon deposition of APP-C60 and C60 on the (GeO2)Ge surface is accompanied by an increase in the work function of the surface E vac- E F by the value of 0.2-0.3 eV, which corresponds to the transfer of the electron density from the substrate to the organic films under investigation. The largest changes occur with an increase in the coating thickness to 3 nm, and with further deposition of APP-C60 and C60, the work function of the surface changes only slightly.

  10. Numerical study of electronic structure under uniform magnetic field and quantized Hall conductance for multi-band tight-binding models

    NASA Astrophysics Data System (ADS)

    Arai, Masao; Hatsugai, Yasuhiro

    2011-12-01

    The electronic structure of periodic lattice under uniform magnetic field was studied numerically for multi-band tight-binding models with non-orthogonal basis sets. When magnetic translational symmetry is fully taken into account, computational time can be greatly reduced. Quantized Hall conductance was evaluated by robust multi-band formulation of Chern number. We found that calculated quantized Hall conductance coincides with the semi-classical results. Discontinuous jumps of Hall conductance occur at van-Hove singularities and correspond to mod q ambiguity of the Diophantine equation of Chern number.

  11. Subterahertz self-oscillations of depletion of electron populations in the conduction band of GaAs in the presence of pumping and intrinsic stimulated radiation

    SciTech Connect

    Ageeva, N. N.; Bronevoi, I. L. Zabegaev, D. N.; Krivonosov, A. N.

    2010-09-15

    It was previously found that, during picosecond optical pumping, ultrafast interrelated self-modulations of fundamental absorption of light and intrinsic stimulated picosecond radiation emerge in GaAs. In this study, quantitative evaluations confirming the assumption that the mentioned self-modulations are caused by self-oscillations of depletion of electron populations in the conduction band are made. The relation for the frequency of self-oscillations of depletion of populations is obtained. The presence of conditions for self-organization leading to the emergence of periodic nonlinear waves in nonequilibrium media, which is photogenerated electron-hole plasma with depletions of populations, is shown. As a result, in a series of studies, including this one, it is found that the collective excitation of charge carriers-self-oscillations of depletion of populations of the conduction band-emerges during pumping in GaAs under the effect of intrinsic stimulated radiation.

  12. Formation of the conduction band electronic structure during deposition of ultrathin dicarboximide-substituted perylene films on the oxidized silicon surface

    NASA Astrophysics Data System (ADS)

    Komolov, A. S.; Lazneva, E. F.; Gerasimova, N. B.; Panina, Yu. A.; Baramygin, A. V.; Ovsyannikov, A. D.

    2015-07-01

    The results of the investigation of the conduction band electronic structure and the interfacial potential barrier during deposition of ultrathin dicarboximide-substituted perylene films (PTCBI-C8) on the oxidized silicon surface have been presented. The measurements have been performed using the very low energy electron diffraction (VLEED) technique implemented in the total current spectroscopy (TCS) mode with a variation in the incident electron energy from 0 to 25 eV. Changes in the intensities of the maxima from the deposited PTCBI-C8 film and from the substrate with an increase in the organic coating thickness to 7 nm have been analyzed using TCS measurements. A comparison of the structure of the maxima of PTCBI-C8 and perylene-tetracarboxylic-dianhydride (PTCDA) films has made it possible to distinguish the energy range (8-13 eV above E F) in which distinct differences in the structures of maxima for PTCDA and PTCBI-C8 films are observed. This energy range corresponds to low-lying σ*-states of the conduction band of the films studied. The formation of the interfacial region of the PTCBI-C8 film and (SiO2) n-Si substrate is accompanied by an increase in the surface work function by 0.6 eV, which corresponds to the electron density charge transfer from the (SiO2) n-Si substrate to the PTCBI-C8 film.

  13. Density dependence of the conduction-band energy {ital V}{sub 0} of excess electrons in fluid xenon

    SciTech Connect

    Frongillo, Y.; Plenkiewicz, B.; Jay-Gerin, J.

    1996-05-01

    The ground-state energy {ital V}{sub 0} (relative to vacuum) of quasifree excess electrons in fluid xenon is calculated as a function of fluid density {ital n}. The calculations are performed within the framework of the Wigner-Seitz mean-field approximation for nonpolar fluids, using an accurate atomic pseudopotential to model the excess electron-xenon interaction. The calculated values of {ital V}{sub 0}({ital n}) are compared to experimental data and with other theoretical results. {copyright} {ital 1996 The American Physical Society.}

  14. Theoretical study of energy states of two-dimensional electron gas in pseudomorphically strained InAs HEMTs taking into account the non-parabolicity of the conduction band

    SciTech Connect

    Nishio, Yui; Yamaguchi, Satoshi; Yamazaki, Youichi; Watanabe, Akira; Tange, Takahiro; Iida, Tsutomu; Takanashi, Yoshifumi

    2013-12-04

    We determined rigorously the energy states of a two-dimensional electron gas (2DEG) in high electron mobility transistors (HEMTs) with a pseudomorphically strained InAs channel (InAs PHEMTs) taking into account the non-parabolicity of the conduction band for InAs. The sheet carrier concentration of 2DEG for the non-parabolic energy band was about 50% larger than that for the parabolic energy band and most of the electrons are confined strongly in the InAs layer. In addition, the threshold voltage for InAs PHEMTs was about 0.21 V lower than that for conventional InGaAs HEMTs.

  15. Conduction-band electronic states of YbInCu{sub 4} studied by photoemission and soft x-ray absorption spectroscopies

    SciTech Connect

    Utsumi, Yuki; Kurihara, Hidenao; Maso, Hiroyuki; Tobimatsu, Komei; Sato, Hitoshi; Shimada, Kenya; Namatame, Hirofumi; Hiraoka, Koichi; Kojima, Kenichi; Ohkochi, Takuo; Fujimori, Shin-ichi; Takeda, Yukiharu; Saitoh, Yuji; Mimura, Kojiro; Ueda, Shigenori; Yamashita, Yoshiyuki; Yoshikawa, Hideki; Kobayashi, Keisuke; Oguchi, Tamio; Taniguchi, Masaki

    2011-09-15

    We have studied conduction-band (CB) electronic states of a typical valence-transition compound YbInCu{sub 4} by means of temperature-dependent hard x-ray photoemission spectroscopy (HX-PES) of the Cu 2p{sub 3/2} and In 3d{sub 5/2} core states taken at h{nu}=5.95 keV, soft x-ray absorption spectroscopy (XAS) of the Cu 2p{sub 3/2} core absorption region around h{nu}{approx}935 eV, and soft x-ray photoemission spectroscopy (SX-PES) of the valence band at the Cu 2p{sub 3/2} absorption edge of h{nu}=933.0 eV. With decreasing temperature below the valence transition at T{sub V}=42 K, we have found that (1) the Cu 2p{sub 3/2} and In 3d{sub 5/2} peaks in the HX-PES spectra exhibit the energy shift toward the lower binding-energy side by {approx}40 and {approx}30 meV, respectively, (2) an energy position of the Cu 2p{sub 3/2} main absorption peak in the XAS spectrum is shifted toward higher photon-energy side by {approx}100 meV, with an appearance of a shoulder structure below the Cu 2p{sub 3/2} main absorption peak, and (3) an intensity of the Cu L{sub 3}VV Auger spectrum is abruptly enhanced. These experimental results suggest that the Fermi level of the CB-derived density of states is shifted toward the lower binding-energy side. We have described the valence transition in YbInCu{sub 4} in terms of the charge transfer from the CB to Yb 4f states.

  16. Analysis of energy states of two-dimensional electron gas in pseudomorphically strained InSb high-electron-mobility transistors taking into account the nonparabolicity of the conduction band

    NASA Astrophysics Data System (ADS)

    Nishio, Yui; Sato, Takato; Hirayama, Naomi; Iida, Tsutomu; Takanashi, Yoshifumi

    2016-08-01

    We propose a high electron mobility transistor with a pseudomorphically strained InSb channel (InSb-PHEMT) having an InSb composite channel layer in which the Al y In1‑ y Sb sub-channel layer is inserted between the InSb channel and the Al x In1‑ x Sb barrier layers to increase the conduction-band offset (ΔE C) at the heterointerface between the InSb channel and the Al x In1‑ x Sb barrier layers. The energy states for the proposed InSb-PHEMTs are calculated using our analytical method, taking account of the nonparabolicity of the conduction band. For the proposed InSb-PHEMTs, putting the sub-channel layers into the channel is found to be effective for obtaining a sufficiently large ΔE C (∼0.563 eV) to restrain electrons in the channel and increase the sheet concentration of two-dimensional electron gas to as high as 2.5 × 1012 cm‑2, which is comparable to that of InAs-PHEMTs. This also leads to a large transconductance of PHEMTs. In the proposed InSb-PHEMTs, electrons are strongly bound to the channel layer compared with InAs-PHEMTs, despite the effective mass at the conduction band (0.0139 m 0) of InSb being smaller than that of InAs and ΔE C for the InSb-PHEMTs being 25% smaller than that for the InAs-PHEMTs. This is because the bandgap energy of InSb is about one-half that of InAs, and hence, the nonparabolicity parameter of InSb is about twice as large as that of InAs.

  17. Ballistic-electron-emission spectroscopy of Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

    SciTech Connect

    OShea, J.J.; Brazel, E.G.; Rubin, M.E.; Bhargava, S.; Chin, M.A.; Narayanamurti, V.

    1997-07-01

    We report an extensive investigation of semiconductor band-structure effects in single-barrier Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0{le}x{le}1). The initial ({Gamma}) BEES thresholds for Al{sub x}Ga{sub 1{minus}x}As single barriers with 0{le}x{le}0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements at 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime ({ital x}{gt}0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al{sub x}Ga{sub 1{minus}x}As {ital X} valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al{sub x}Ga{sub 1{minus}x}As interface produces a significant fraction of this{ital X} valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al{sub x}Ga{sub 1{minus}x}As {Gamma}, {ital L}, and {ital X} points yields good agreement over the entire composition range. {copyright} {ital 1997} {ital The American Physical Society}

  18. Conductive nanomaterials for printed electronics.

    PubMed

    Kamyshny, Alexander; Magdassi, Shlomo

    2014-09-10

    This is a review on recent developments in the field of conductive nanomaterials and their application in printed electronics, with particular emphasis on inkjet printing of ink formulations based on metal nanoparticles, carbon nanotubes, and graphene sheets. The review describes the basic properties of conductive nanomaterials suitable for printed electronics (metal nanoparticles, carbon nanotubes, and graphene), their stabilization in dispersions, formulations of conductive inks, and obtaining conductive patterns by using various sintering methods. Applications of conductive nanomaterials for electronic devices (transparent electrodes, metallization of solar cells, RFID antennas, TFTs, and light emitting devices) are also briefly reviewed. PMID:25340186

  19. Intensive Plasmonic Flash Light Sintering of Copper Nanoinks Using a Band-Pass Light Filter for Highly Electrically Conductive Electrodes in Printed Electronics.

    PubMed

    Hwang, Yeon-Taek; Chung, Wan-Ho; Jang, Yong-Rae; Kim, Hak-Sung

    2016-04-01

    In this work, an intensive plasmonic flash light sintering technique was developed by using a band-pass light filter matching the plasmonic wavelength of the copper nanoparticles. The sintering characteristics, such as resistivity and microstructure, of the copper nanoink films were studied as a function of the range of the wavelength employed in the flash white light sintering. The flash white light irradiation conditions (e.g., wavelength range, irradiation energy, pulse number, on-time, and off-time) were optimized to obtain a high conductivity of the copper nanoink films without causing damage to the polyimide substrate. The wavelength range corresponding to the plasmonic wavelength of the copper nanoparticles could efficiently sinter the copper nanoink and enhance its conductivity. Ultimately, the sintered copper nanoink films under optimal light sintering conditions showed the lowest resistivity (6.97 μΩ·cm), which was only 4.1 times higher than that of bulk copper films (1.68 μΩ·cm). PMID:26975337

  20. Separability Between Valence and Conduction Bands in Transition Metal Clusters

    SciTech Connect

    Apra, Edoardo; Carter, Emily A.; Fortunelli, Alessandro

    2004-07-30

    Simplified theories of transition metal electronic structure have been postulated for many decades. Here we test one such approximation, namely separate treatments of d (valence) and s/p (conduction) electrons in transition metal clusters, within a density functional formalism. Two different basic approaches are considered: (a) an independent-band approximation, in which the d- and s/p-bands interact only via the ?-dependent components of the Kohn-Sham operator; and (b) a more realistic approximation, in which the lowest-energy d- and s/p-orbitals (separately derived) are allowed to interact through explicit off-diagonal coupling matrix elements. Results are presented for the energy differences among three structural forms (icosahedral, cuboctahedral and truncated decahedral) of 13-atom Ni and Pt clusters. We demonstrate that an explicit decoupling of the d- and s/p-bands does not produce accurate results for the clusters considered here, not even for nickel, i.e., the transition metal for which d-s/p mixing should be at its minimum. By contrast, allowing the lowest energy orbitals of the two separate bands to interact improves the results considerably, and assures a fair description of metal-metal bonding. This suggests simplified models that exclude explicit d-s/p coupling should be employed with caution.

  1. Itinerant electron model and conductance of DNA

    NASA Astrophysics Data System (ADS)

    Qu, Zhen; Kang, Da-Wei; Gao, Xu-Tuan; Xie, Shi-Jie

    2008-09-01

    DNA (Deoxyribonucleic acid) has recently caught the attention of chemists and physicists. A major reason for this interest is DNA’s potential use in nanoelectronic devices, both as a template for assembling nanocircuits and as an element of such circuits. However, the electronic properties of the DNA molecule remain very controversial. Charge-transfer reactions and conductivity measurements show a large variety of possible electronic behavior, ranging from Anderson and band-gap insulators to effective molecular wires and induced superconductors. In this review article, we summarize the wide-ranging experimental and theoretical results of charge transport in DNA. An itinerant electron model is suggested and the effect of the density of itinerant electrons on the conductivity of DNA is studied. Calculations show that a DNA molecule may show conductivity from insulating to metallic, which explains the controversial and profuse electric characteristics of DNA to some extent.

  2. In-place ESR microwave conductivity measurements and electronic band structure studies of the organic superconductor {beta}{double_prime}-(BEDT-TTF){sub 2}SF{sub 5}CH{sub 2}CF{sub 2}SO{sub 3}

    SciTech Connect

    Wang, H.H.; VanZile, M.L.; Schlueter, J.A.

    1999-07-01

    The electronic structure of the organic superconductor {beta}{double_prime}-(BEDT-TTF){sub 2}SF{sub 5}CH{sub 2}CF{sub 2}SO{sub 3} (BEDT-TTF is bis(ethylenedithio)tetrathiafulvalene) was characterized with the use of electron spin resonance (ESR) spectroscopy and electronic band structure calculations. The room-temperature ESR line width is 24--27 G in the plane of a donor molecule layer (i.e., in the ab-plane) and {approximately} 32 G along the normal to this plane (i.e., along the c*-direction). The ab-plane anisotropy of the microwave conductivity was extracted for the first time from the ESR Dysonian line shape analysis. The in-plane conductivity varies sinusoidally, is maximal along the interstack direction (b-axis), and is minimal along the donor stack direction ({alpha}-axis). The Fermi surfaces of the title compound consist of a 2D hole pocket and a pair of 1D wavy lines. The directions for the in-plane conductivity maximum and minimum are in excellent agreement with the electronic band structure calculated for {beta}{double_prime}-(BEDT-TTF){sub 2}SF{sub 5}CH{sub 2}CF{sub 2}SO{sub 3}, and the origin of the in-plane conductivity anisotropy lies in the one-dimensional part of the Fermi surface. This is the first time that an organic conductor shows Dysonian ESR line shape due to its 2D and strongly metallic nature, yet the 1D character is revealed simultaneously through the in-plane conductivity anisotropy.

  3. In-plane ESR microwave conductivity measurements and electronic band structure studies of the organic superconductor, {beta}'-(BEDT-TTF){sub 2}SF{sub 5}CH{sub 2}CF{sub 2}SO{sub 3}.

    SciTech Connect

    Wang, H. H.; VanZile, M. L.; Schlueter, J. A.; Geiser, U.; Kini, A. M.; Sche, P. P.; Koo, H.-J.; Whangbo, M.-H.; Nixon, P. G.; Winter, R. W.; Gard, G. L.; Chemistry; North Carolina State Univ.; Portland State Univ.

    1999-07-01

    The electronic structure of the organic superconductor {beta}''-(BEDT-TTF){sub 2}SF{sub 5}CH{sub 2}CF{sub 2}SO{sub 3} (BEDT-TTF is bis(ethylenedithio)tetrathiafulvalene) was characterized with the use of electron spin resonance (ESR) spectroscopy and electronic band structure calculations. The room-temperature ESR line width is 24-27 G in the plane of a donor molecule layer (i.e., in the ab-plane) and {approx}32 G along the normal to this plane (i.e., along the c*-direction). The ab-plane anisotropy of the microwave conductivity was extracted for the first time from the ESR Dysonian line shape analysis. The in-plane conductivity varies sinusoidally, is maximal along the interstack direction (b-axis), and is minimal along the donor stack direction (a-axis). The Fermi surfaces of the title compound consist of a 2D hole pocket and a pair of 1D wavy lines. The directions for the in-plane conductivity maximum and minimum are in excellent agreement with the electronic band structure calculated for {beta}''-(BEDT-TTF){sub 2}SF{sub 5}CH{sub 2}CF{sub 2}SO{sub 3}, and the origin of the in-plane conductivity anisotropy lies in the one-dimensional part of the Fermi surface. This is the first time that an organic conductor shows Dysonian ESR line shape due to its 2D and strongly metallic nature, yet the 1D character is revealed simultaneously through the in-plane conductivity anisotropy.

  4. Electron currents associated with an auroral band

    NASA Technical Reports Server (NTRS)

    Spiger, R. J.; Anderson, H. R.

    1975-01-01

    Measurements of electron pitch angle distributions and energy spectra over a broad auroral band were used to calculate net electric current carried by auroral electrons in the vicinity of the band. The particle energy spectrometers were carried by a Nike-Tomahawk rocket launched from Poker Flat, Alaska, at 0722 UT on February 25, 1972. Data are presented which indicate the existence of upward field-aligned currents of electrons in the energy range 0.5-20 keV. The spatial relationship of these currents to visual structure of the auroral arc and the characteristics of the electrons carrying the currents are discussed.

  5. Cyclotron side band emissions from magnetospheric electrons

    NASA Technical Reports Server (NTRS)

    Maeda, K.

    1975-01-01

    Very low frequency emissions with subharmonic cyclotron frequency from magnetospheric electrons were detected by the S(3)-A satellite (Explorer 45) whose orbit is close to the magnetic equatorial plane where the wave-particle interaction is most efficient. These emissions were observed during the main phase of a geomagnetic storm in the nightside of the magnetosphere outside of the plasmasphere. During the event of these side-band emissions, the pitch angle distributions of high energy electrons (greater than 50 keV) and of energetic protons (greater than 100 keV) showed remarkable changes with time, whereas those of low energy electrons and protons remained approximately isotropic. In this type of event, emissions consist essentially of two bands, the one below the equatorial electron gyrofrequency, and the other above. The emissions below are whistler mode, and the emissions above are electrostatic mode.

  6. Impact of cation-based localized electronic states on the conduction and valence band structure of Al{sub 1−x}In{sub x}N alloys

    SciTech Connect

    Schulz, S.; Caro, M. A.; O'Reilly, E. P.

    2014-04-28

    We demonstrate that cation-related localized states strongly perturb the band structure of Al{sub 1−x}In{sub x}N leading to a strong band gap bowing at low In content. Our first-principles calculations show that In-related localized states are formed both in the conduction and the valence band in Al{sub 1−x}In{sub x}N for low In composition, x, and that these localized states dominate the evolution of the band structure with increasing x. Therefore, the commonly used assumption of a single composition-independent bowing parameter breaks down when describing the evolution both of the conduction and of the valence band edge in Al{sub 1−x}In{sub x}N.

  7. Anisotropic electronic conduction in stacked two-dimensional titanium carbide

    PubMed Central

    Hu, Tao; Zhang, Hui; Wang, Jiemin; Li, Zhaojin; Hu, Minmin; Tan, Jun; Hou, Pengxiang; Li, Feng; Wang, Xiaohui

    2015-01-01

    Stacked two-dimensional titanium carbide is an emerging conductive material for electrochemical energy storage which requires an understanding of the intrinsic electronic conduction. Here we report the electronic conduction properties of stacked Ti3C2T2 (T = OH, O, F) with two distinct stacking sequences (Bernal and simple hexagonal). On the basis of first-principles calculations and energy band theory analysis, both stacking sequences give rise to metallic conduction with Ti 3d electrons contributing most to the conduction. The conduction is also significantly anisotropic due to the fact that the effective masses of carriers including electrons and holes are remarkably direction-dependent. Such an anisotropic electronic conduction is evidenced by the I−V curves of an individual Ti3C2T2 particulate, which demonstrates that the in-plane electrical conduction is at least one order of magnitude higher than that vertical to the basal plane. PMID:26548439

  8. Anisotropic electronic conduction in stacked two-dimensional titanium carbide.

    PubMed

    Hu, Tao; Zhang, Hui; Wang, Jiemin; Li, Zhaojin; Hu, Minmin; Tan, Jun; Hou, Pengxiang; Li, Feng; Wang, Xiaohui

    2015-01-01

    Stacked two-dimensional titanium carbide is an emerging conductive material for electrochemical energy storage which requires an understanding of the intrinsic electronic conduction. Here we report the electronic conduction properties of stacked Ti3C2T2 (T = OH, O, F) with two distinct stacking sequences (Bernal and simple hexagonal). On the basis of first-principles calculations and energy band theory analysis, both stacking sequences give rise to metallic conduction with Ti 3d electrons contributing most to the conduction. The conduction is also significantly anisotropic due to the fact that the effective masses of carriers including electrons and holes are remarkably direction-dependent. Such an anisotropic electronic conduction is evidenced by the I-V curves of an individual Ti3C2T2 particulate, which demonstrates that the in-plane electrical conduction is at least one order of magnitude higher than that vertical to the basal plane. PMID:26548439

  9. Anisotropic electronic conduction in stacked two-dimensional titanium carbide

    NASA Astrophysics Data System (ADS)

    Hu, Tao; Zhang, Hui; Wang, Jiemin; Li, Zhaojin; Hu, Minmin; Tan, Jun; Hou, Pengxiang; Li, Feng; Wang, Xiaohui

    2015-11-01

    Stacked two-dimensional titanium carbide is an emerging conductive material for electrochemical energy storage which requires an understanding of the intrinsic electronic conduction. Here we report the electronic conduction properties of stacked Ti3C2T2 (T = OH, O, F) with two distinct stacking sequences (Bernal and simple hexagonal). On the basis of first-principles calculations and energy band theory analysis, both stacking sequences give rise to metallic conduction with Ti 3d electrons contributing most to the conduction. The conduction is also significantly anisotropic due to the fact that the effective masses of carriers including electrons and holes are remarkably direction-dependent. Such an anisotropic electronic conduction is evidenced by the I-V curves of an individual Ti3C2T2 particulate, which demonstrates that the in-plane electrical conduction is at least one order of magnitude higher than that vertical to the basal plane.

  10. W-band free-electron masers

    SciTech Connect

    Freund, H. P.; Jackson, R. H.; Danly, B. G.; Levush, B.

    1999-05-07

    Theoretical analyses of high power W-band (i.e., {approx_equal}94 GHz) free-electron maser amplifiers are presented for a helical wiggler/cylindrical waveguide configuration using the three-dimensional slow-time-scale ARACHNE simulation code [9]. The geometry treated by ARACHNE is that of an electron beam propagating through the cylindrical waveguide subject to a helical wiggler and an axial guide magnetic field. Two configurations are discussed. The first is the case of a reversed-guide field geometry where the guide field is oriented antiparallel to the helicity of the wiggler field. Using a 330 kV/20 A electron beam, efficiencies of the order of 7% are calculated with a bandwidth (FWHM) of 5 GHz. The second example employs a strong guide field of 20 kG oriented parallel to the helicity of the wiggler. Here, efficiencies of greater than 8% are possible with a FWHM bandwidth of 4.5 GHz using a 300 kV/20 A electron beam. A normalized emittance of 95 mm-mrad is assumed in both cases, and no beam losses are observed for either case. Both cases assume interaction with the fundamental TE{sub 11} mode, which has acceptably low losses in the W-band.

  11. Electronic band structure of magnetic bilayer graphene superlattices

    SciTech Connect

    Pham, C. Huy; Nguyen, T. Thuong

    2014-09-28

    Electronic band structure of the bilayer graphene superlattices with δ-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.

  12. F-electron systems: Pushing band theory

    SciTech Connect

    Koelling, D.D.

    1990-08-01

    The f-electron orbitals have always been the incomplete atomic shell acting as a local moment weakly interacting with the remaining electronic structure'' in the minds of most people. So examining them using a band theory where one views them as itinerant once was -- and to some extent even today still is -- considered with some skepticism. Nonetheless, a very significant community has successfully utilized band theory as a probe of the electronic structure of the appropriate actinides and rare earths. Those people actually using the approach would be the first to declare that it is not the whole solution. Instead, one is pushing and even exceeding its limits of applicability. However, the appropriate procedure is to push the model consistently to its limits, patch where possible, and then look to see where discrepancies remain. I propose to offer a selected review of past developments (emphasizing the career to date of A. J. Freeman in this area), offer a list of interesting puzzles for the future, and then make some guesses as to the techniques one might want to use. 27 refs.

  13. Shadow bands in models of correlated electrons

    SciTech Connect

    Moreo, A.; Haas, S.; Dagotto, E.

    1995-08-01

    A consequence of strong antiferromagnetic correlations in models of high-Tc cuprates is the appearance in photoemission (PES) calculations of considerable more weight above the Fermi momentum p{sub F} than expected for non-interacting electrons. This effect, qualitatively discussed by Kampf and Schrieffer under the name of {open_quotes}shadow bands{close_quotes}, is here quantitatively analyzed in the two dimensional Hubbard and t-J models using Monte Carlo and exact diagonalization techniques in the realistic strong coupling regime.

  14. Electronic correlation effects in multi-band systems

    NASA Astrophysics Data System (ADS)

    Song, Kok Wee

    The recent dominant trends in condensed matter physics research can be roughly summarized into three newly discovered materials: topological insulators, graphene, and iron-based superconductors. All these materials exhibit many intriguing properties which are fundamentally related to their electronic band structure. Therefore, this lead to many intense investigations on multi-band electronic system to explore new physics. The physics of multi-band electronic structure is fascinating in several aspects. Without many-body effects, because of the gauge freedom of Bloch states, topological insulators can give rise a robust metallic behavior at its boundaries. In graphene, the touching between conduction and valence band at Fermi level yields a new criticality class which exhibit many unconventional electronic properties, especially its quasi-relativistic behavior. Turning to the many-body effects, for instance, the iron-based superconductors can sustain an superconducting ground state despite of no attractive interactions in the system. Therefore, a deeper understanding for the conventional notions in condensed matter physics has put forward by many of these experimental observations. In this thesis, the many-body effects in multi-band systems are the main focus, especially the study of graphene and iron-based superconductors which can be compared to experiments. These theoretical studies intend to understand how the underlying electronic bands degree of freedom can give rise to Fermi-liquid instabilities, and how these effects can be related to intriguing physical properties. We first study the electrons correlation effects in bilayer graphene by a renormalization group technique. In this study, we build a microscopic model of bilayer graphene from a tight-binding approach. In our finding, the peculiar Fermi surface configuration leads to critical behavior which is beyond the Fermi-liquid paradigm. Furthermore, due to the electron-electron interactions between

  15. Spin susceptibility of Anderson impurities in arbitrary conduction bands

    NASA Astrophysics Data System (ADS)

    Fang, Tie-Feng; Tong, Ning-Hua; Cao, Zhan; Sun, Qing-Feng; Luo, Hong-Gang

    2015-10-01

    Spin susceptibility of Anderson impurities is a key quantity in understanding the physics of Kondo screening. Traditional numerical renormalization group (NRG) calculation of the impurity contribution χimp to susceptibility, defined originally by Wilson in a flat wide band, has been generalized before to structured conduction bands. The results brought about non-Fermi-liquid and diamagnetic Kondo behaviors in χimp, even when the bands are not gapped at the Fermi energy. Here, we use the full density-matrix (FDM) NRG to present high-quality data for the local susceptibility χloc and to compare them with χimp obtained by the traditional NRG. Our results indicate that those exotic behaviors observed in χimp are unphysical. Instead, the low-energy excitations of the impurity in arbitrary bands only without gap at the Fermi energy are still a Fermi liquid and paramagnetic. We also demonstrate that unlike the traditional NRG yielding χloc less accurate than χimp, the FDM method allows a high-precision dynamical calculation of χloc at much reduced computational cost, with an accuracy at least one order higher than χimp. Moreover, artifacts in the FDM algorithm to χimp and origins of the spurious non-Fermi-liquid and diamagnetic features are clarified. Our work provides an efficient high-precision algorithm to calculate the spin susceptibility of impurity for arbitrary structured bands, while negating the applicability of Wilson's definition to such cases.

  16. Mixed ionic and electronic conductivity in polymers

    SciTech Connect

    Shriver, D.F.

    1991-06-01

    New polymer films were synthesized that are mixed ionic-electronic conductors. Preliminary ion transport measurements have been made on these materials in the reduced state where electronic conductivity is negligible. We also have made preliminary measurements of switching times for these materials. Theoretical studies have been performed ion pairing in insulating and electronically conducting films.

  17. On nonlocal electron heat conduction

    SciTech Connect

    Krasheninnikov, S.I. )

    1993-01-01

    An improvement of the Albritton nonlocal electron heat transport model is proposed for high-[ital Z] plasmas. The thermal decay of the temperature perturbation in a uniform plasma as calculated by this model is compared with that obtained by Fokker--Planck simulations. Complete agreement is found up to values [ital k][lambda][sub [ital e

  18. Comparison of ALINGAAS/GAAS Superlattice Photocathodes Having Low Conduction Band Offset

    SciTech Connect

    Ioakeimidi, K,; Maruyama, T.; Clendenin, J.E.; Brachmann, A.; Garwin, E.L.; Kirby, R.E.; Prescott, C.Y.; Vasilyev, D.; Mamaev, Y.A.; Gerchikov, L.G.; Subashiev, A.V.; Yashin, Y.P.; /St. Petersburg Polytechnic Inst.

    2006-03-31

    The main advantage of superlattice (SL) structures as spin polarized electron emitters is the ability to provide a large splitting between the heavy hole (HH) and light hole (LH) valence bands (VB) over a large active thickness compared to single strained layers. Two important depolarization mechanisms in these structures are the scattering effects during the transit of the electrons in the active region and the depolarization that takes place in the band bending region (BBR) near the surface. In this paper, we systematically study the effects of the electron mobility and transit time by using an InAlGaAs/GaAs SL with a flat conduction band (CB). Initial results by the SPTU-SLAC collaboration using such structures grown by the Ioffe Institute showed polarization and quantum yield (QE) of 92% and 0.2% respectively. We report measurements using similar structures grown by SVT Associates. The results (polarization up to 90%) are also compared with simulations.

  19. Inter-Valence-Subband/Conduction-Band-Transport IR Detectors

    NASA Technical Reports Server (NTRS)

    Ting, David; Gunapala, Sarath; Bandara, Sumith

    2004-01-01

    Infrared (IR) detectors characterized by a combination of (1) high-quantum-efficiency photoexcitation of inter-valence-subband transitions of charge carriers and (2) high-mobility conduction- band transport of the thus-excited charge carriers have been proposed in an effort to develop focal-plane arrays of such devices for infrared imaging. Like many prior quantum-well infrared photodetectors (QWIPs), the proposed devices would be made from semiconductor heterostructures. In order to obtain the combination of characteristics mentioned above, the proposed devices would be designed and fabricated in novel InAs/GaSb superlattice configurations that would exploit a phenomenon known in the semiconductor art as type-II broken-gap band offset.

  20. Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell.

    PubMed

    Martí, A; Antolín, E; Stanley, C R; Farmer, C D; López, N; Díaz, P; Cánovas, E; Linares, P G; Luque, A

    2006-12-15

    We present intermediate-band solar cells manufactured using quantum dot technology that show for the first time the production of photocurrent when two sub-band-gap energy photons are absorbed simultaneously. One photon produces an optical transition from the intermediate-band to the conduction band while the second pumps an electron from the valence band to the intermediate-band. The detection of this two-photon absorption process is essential to verify the principles of operation of the intermediate-band solar cell. The phenomenon is the cornerstone physical principle that ultimately allows the production of photocurrent in a solar cell by below band gap photon absorption, without degradation of its output voltage. PMID:17280325

  1. Electronic materials with a wide band gap: recent developments

    PubMed Central

    Klimm, Detlef

    2014-01-01

    The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap E g = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (E g = 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider E g were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity. PMID:25295170

  2. Electronic materials with a wide band gap: recent developments.

    PubMed

    Klimm, Detlef

    2014-09-01

    The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap E g = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (E g = 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider E g were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity. PMID:25295170

  3. The Electronic Thermal Conductivity of Graphene.

    PubMed

    Kim, Tae Yun; Park, Cheol-Hwan; Marzari, Nicola

    2016-04-13

    Graphene, as a semimetal with the largest known thermal conductivity, is an ideal system to study the interplay between electronic and lattice contributions to thermal transport. While the total electrical and thermal conductivity have been extensively investigated, a detailed first-principles study of its electronic thermal conductivity is still missing. Here, we first characterize the electron-phonon intrinsic contribution to the electronic thermal resistivity of graphene as a function of doping using electronic and phonon dispersions and electron-phonon couplings calculated from first-principles at the level of density-functional theory and many-body perturbation theory (GW). Then, we include extrinsic electron-impurity scattering using low-temperature experimental estimates. Under these conditions, we find that the in-plane electronic thermal conductivity κe of doped graphene is ∼300 W/mK at room temperature, independently of doping. This result is much larger than expected and comparable to the total thermal conductivity of typical metals, contributing ∼10% to the total thermal conductivity of bulk graphene. Notably, in samples whose physical or domain sizes are of the order of few micrometers or smaller, the relative contribution coming from the electronic thermal conductivity is more important than in the bulk limit, because lattice thermal conductivity is much more sensitive to sample or grain size at these scales. Last, when electron-impurity scattering effects are included we find that the electronic thermal conductivity is reduced by 30 to 70%. We also find that the Wiedemann-Franz law is broadly satisfied at low and high temperatures but with the largest deviations of 20-50% around room temperature. PMID:26907524

  4. Electronic structure of hydrogenated diamond: Microscopical insight into surface conductivity

    NASA Astrophysics Data System (ADS)

    Iacobucci, S.; Alippi, Paola; Calvani, P.; Girolami, M.; Offi, F.; Petaccia, L.; Trucchi, D. M.

    2016-07-01

    We have correlated the surface conductivity of hydrogen-terminated diamond to the electronic structure in the Fermi region. Significant density of electronic states (DOS) in proximity of the Fermi edge has been measured by photoelectron spectroscopy (PES) on surfaces exposed to air, corresponding to a p -type electric conductive regime, while upon annealing a depletion of the DOS has been achieved, resembling the diamond insulating state. The surface and subsurface electronic structure has been determined, exploiting the different probing depths of PES applied in a photon energy range between 7 and 31 eV. Ab initio density functional calculations including surface charge depletion and band-bending effects favorably compare with electronic states measured by angular-resolved photoelectron spectroscopy. Such states are organized in the energy-momentum space in a twofold structure: one, bulk-derived, band disperses in the Γ -X direction with an average hole effective mass of (0.43 ±0.02 ) m0 , where m0 is the bare electron mass; a second flatter band, with an effective mass of (2.2 ±0.9 ) m0 , proves that a hole gas confined in the topmost layers is responsible for the conductivity of the (2 ×1 ) hydrogen-terminated diamond (100 ) surface.

  5. Electronically conductive polymer composites and microstructures

    SciTech Connect

    Van Dyke, L.S.

    1993-01-01

    Composites of electronically conductive polymers with insulating host materials are investigated. A template synthesis method was developed for the production of electronically conductive polymer microstructures. In template synthesis the pores of a porous host membrane act as templates for the polymerization of a conductive polymer. The template synthetic method can be used to form either solid microfibrils or hollow microtubules. The electrochemical properties of conductive polymers produced via the template synthesis method are superior to those of conventionally synthesized conductive polymers. Electronically conductive polymers are used to impart conductivity to non-conductive materials. Two different approaches are used. First, thin film composites of conductive polymers with fluoropolymers are made by the polymerization of conductive polymers onto fluoropolymer films. Modification of the fluoropolymer surface prior to conductive polymer polymerization is necessary to obtain good adhesion between the two materials. The difference in adhesion of the conductive polymer to the modified and unmodified fluoropolymer surfaces can be used to pattern the conductive polymer coating. Patterning of the conductive polymer coating can alternatively be done via UV laser ablation of the conductive polymer. The second method by which conductive polymers were used to impart conductivity to an insulating polymer was via the formation of a graft copolymer. In this approach, heterocyclic monomers grafted to an insulating polyphosphazene backbone were polymerized to yield semiconductive materials. Finally the measurement of electrolyte concentration in polypyrrole and the effects of hydroxide anion on the electrochemical and electrical properties of polypyrrole are described. It is shown that treatment of polypyrrole with hydroxide anion increases the potential window over which polypyrrole is a good electronic conductor.

  6. Controlling the conduction band offset for highly efficient ZnO nanorods based perovskite solar cell

    NASA Astrophysics Data System (ADS)

    Dong, Juan; Shi, Jiangjian; Li, Dongmei; Luo, Yanhong; Meng, Qingbo

    2015-08-01

    The mechanism of charge recombination at the interface of n-type electron transport layer (n-ETL) and perovskite absorber on the carrier properties in the perovskite solar cell is theoretically studied. By solving the one dimensional diffusion equation with different boundary conditions, it reveals that the interface charge recombination in the perovskite solar cell can be suppressed by adjusting the conduction band offset (ΔEC) at ZnO ETL/perovskite absorber interface, thus leading to improvements in cell performance. Furthermore, Mg doped ZnO nanorods ETL has been designed to control the energy band levels. By optimizing the doping amount of Mg, the conduction band minimum of the Mg doped ZnO ETL has been raised up by 0.29 eV and a positive ΔEC of about 0.1 eV is obtained. The photovoltage of the cell is thus significantly increased due to the relatively low charge recombination.

  7. Electronically conducting polymers with silver grains

    NASA Technical Reports Server (NTRS)

    Murphy, Oliver J. (Inventor); Hitchens, G. Duncan (Inventor); Hodko, Dolibor (Inventor)

    1999-01-01

    The present invention provides electronically conducting polymer films formed from photosensitive formulations of pyrrole and an electron acceptor that have been selectively exposed to UV light, laser light, or electron beams. The formulations may include photoinitiators, flexibilizers, solvents and the like. These solutions can be used in applications including printed circuit boards and through-hole plating and enable direct metallization processes on non-conducting substrates. After forming the conductive polymer patterns, a printed wiring board can be formed by sensitizing the polymer with palladium and electrolytically depositing copper.

  8. Device Physics Analysis of Parasitic Conduction Band Barrier Formation in SiGe HBTs

    NASA Technical Reports Server (NTRS)

    Roenker, K. P.; Alterovitz, S. A.

    2000-01-01

    This paper presents a physics-based model describing the current-induced formation of a parasitic barrier in the conduction band at the base collector heterojunction in npn SiGe heterojunction bipolar transistors (HBTs). Due to the valence band discontinuity DELTA E(sub v), hole injection into the collector at the onset of base pushout is impeded, which gives rise to formation of a barrier to electron transport which degrades the device's high frequency performance. In this paper, we present results from an analytical model for the height of the barrier calculated from the device's structure as a function of the collector junction bias and collector current density.

  9. Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

    SciTech Connect

    Klein, A.; Körber, C.; Wachau, A.; Säuberlich, F.; Gassenbauer, Y.; Harvey, S.P.; Proffit, Diana E.; Mason, Thomas O.

    2010-11-02

    Doping limits, band gaps, work functions and energy band alignments of undoped and donor-doped transparent conducting oxides ZnO, In{sub 2}O{sub 3}, and SnO{sub 2} as accessed by X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS) are summarized and compared. The presented collection provides an extensive data set of technologically relevant electronic properties of photovoltaic transparent electrode materials and illustrates how these relate to the underlying defect chemistry, the dependence of surface dipoles on crystallographic orientation and/or surface termination, and Fermi level pinning.

  10. Tuning the electronic band gap of graphene by oxidation

    SciTech Connect

    Dabhi, Shweta D.; Jha, Prafulla K.

    2015-06-24

    Using plane wave pseudo potential density functional theory, we studied the electronic properties of graphene with different C:O ratio. In this work, we discussed the changes that occur in electronic band structure of graphene functionalized with different amount of epoxy group. Electronic band gap depends on C:O ratio in graphene oxide containing epoxy group. The present work will have its implication for making devices with tunable electronic properties by oxidizing graphene.

  11. Electronic Band Engineering of Epitaxial Graphene by Atomic Intercalation

    NASA Astrophysics Data System (ADS)

    Jayasekera, Thushari; Sandin, Andreas; Xu, Shu; Wheeler, Virginia; Gaskill, D. K.; Rowe, J. E.; Kim, K. W.; Dougherty, Daniel B.; Buongiorno Nardelli, M.

    2012-02-01

    Using calculations from first principles, we have investigated possible ways of engineering the electronic band structure of epitaxial graphene on SiC. In particular, intercalation of different atomic species, such as Hydrogen, Fluorine, Sodium, Germanium, Carbon and Silicon is shown to modify and tune the interface electronic properties and band alignments. Our results suggest that intercalation in graphene is quite different from that in graphite, and could provide a fundamentally new way to achieve electronic control in graphene electronics.

  12. Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor

    NASA Astrophysics Data System (ADS)

    Padilla, J. L.; Palomares, A.; Alper, C.; Gámiz, F.; Ionescu, A. M.

    2016-01-01

    In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron-hole bilayer tunnel field-effect transistor. We show that, analogously to the explicit formula for the tunneling distance that can be easily obtained in the semiclassical framework where the conduction and valence band edges are allowed states, an equivalent analytical expression can be derived in the presence of field-induced quantum confinement for describing the dependence of the tunneling distance on the body thickness and material properties of the channel. This explicit expression accounting for quantum confinement holds valid provided that the potential wells for electrons and holes at the top and bottom of the channel can be approximated by triangular profiles. Analytical predictions are compared to simulation results showing very accurate agreement.

  13. Electronic Band Gap of SrSe at High Pressure

    SciTech Connect

    Atkinson,T.; Chynoweth, K.; Cervantes, P.

    2006-01-01

    The electronic band gap of SrSe, in the CsCl-stuctured phase, was measured to 42 GPa via optical absorption studies. The indirect electronic band gap was found to close monotonically with pressure for the range of pressures studied. The change in band gap with respect to pressure, dE{sub gap}/dP, was determined to be -6.1(5)x10{sup -3} eV/GPa. By extrapolation of our line fit, we estimate band gap closure to occur at 180(20) GPa.

  14. Engineering the Electronic Band Structure for Multiband Solar Cells

    SciTech Connect

    Lopez, N.; Reichertz, L.A.; Yu, K.M.; Campman, K.; Walukiewicz, W.

    2010-07-12

    Using the unique features of the electronic band structure of GaNxAs1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the Band Anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.

  15. Theoretical Analysis on the Band Structure Variance of the Electron Doped 1111 Iron-based Superconductors

    NASA Astrophysics Data System (ADS)

    Suzuki, K.; Usui, H.; Iimura, S.; Sato, Y.; Matsuishi, S.; Hosono, H.; Kuroki, K.

    We perform first principles band calculation of electron doped iron-based superconductors adopting the virtual crystal approximation. We find that when electrons are doped by element substitution in the blocking layer, the band structure near the Fermi level is affected due to the increase of the positive charge in the layer. On the other hand, when Fe in the conducting layer is substituted by Co, the band structure is barely affected. This difference should be a key factor in understanding the phase diagram of the heavily doped electron doped systems LnFeAsO1-xHx.

  16. Electrical conduction and band offsets in Si/HfxTi1-xO2/metal structures

    NASA Astrophysics Data System (ADS)

    Afanas'ev, V. V.; Stesmans, A.; Chen, F.; Li, M.; Campbell, S. A.

    2004-06-01

    The electron energy band alignment in the Si/HfxTi1-xO2/metal (Au,Al) structures is determined as a function of oxide composition using internal photoemission of electrons and photoconductivity measurements. For x⩽0.5 the electron excitations with thresholds corresponding to the band-gap width of amorphous TiO2 (4.4 eV) and HfO2 (5.6 and 5.9 eV) are observed at the same time, suggesting formation of TiO2- and HfO2-like subnetworks. With respect to the Fermi level of Au the conduction band of TiO2 appears to be 1.4 eV below the conduction band of HfO2 which indicates that the valence bands of the two oxides are nearly aligned. This significant downshift of the conduction band due to Ti incorporation leads to low barriers for electrons at the interfaces of HfxTi1-xO2 with Si and Al (˜1 eV or less) strongly impairing insulating properties of the oxide. Crystallization of TiO2 upon high-temperature annealing further enhances leakage currents because of a significantly lower band-gap width of crystallized TiO2 (3.1-3.4 eV).

  17. Electrically conductive and thermally conductive materials for electronic packaging

    NASA Astrophysics Data System (ADS)

    Liu, Zongrong

    The aim of this dissertation is to develop electrically or thermally conductive materials that are needed for electronic packaging and microelectronic cooling. These materials are in the form of coatings and are made from pastes. The research work encompasses paste formulation, studying the process of converting a paste to a conductive material, relating the processing conditions to the structure and performance, and evaluating performance attributes that are relevant to the application of these conductive materials. The research has resulted in new information that is valuable to the microelectronic industry. Work on electrically conductive materials emphasizes the development of electrical interconnection materials in the form of air-firable glass-free silver-based electrically conductive thick films, which use the Ti-Al alloy as the binder and are in contrast to conventional films that use glass as the binder. The air-firability, as enabled by minor additions of tin and zinc to the paste, is in contrast to previous glass-free films that are not firable. The recommended firing condition is 930°C in air. The organic vehicle in the paste comprises ethyl cellulose, which undergoes thermal decomposition during burnout of the paste. The ethyl cellulose is dissolved in ether, which facilitates the burnout. Excessive ethyl cellulose hinders the burnout. A higher heating rate results in more residue after burnout. The presence of silver particles facilitates drying and burnout. Firing in air gives lower resistivity than firing in oxygen. Firing in argon gives poor films. Compared to conventional films that use glass as the binder, these films, when appropriately fired, exhibit lower electrical resistivity (2.5 x 10-6 O.cm) and higher scratch resistance. Work on thermally conductive materials addresses thermal interface materials, which are materials placed at the interface between a heat sink and a heat source for the purpose of improving the thermal contact. Heat

  18. The electronic structure of heavy fermions: Narrow temperature independent bands

    SciTech Connect

    Arko, A.J.; Joyce, J.J.; Smith, J.L.; Andrews, A.B.

    1996-08-01

    The electronic structure of both Ce and U heavy fermions appears to consist of extremely narrow temperature independent bands. There is no evidence from photoemission for a collective phenomenon normally referred to as the Kondo resonance. In uranium compounds a small dispersion of the bands is easily measurable.

  19. Electron conduction in one-dimension

    NASA Astrophysics Data System (ADS)

    Kawabata, A.

    2007-02-01

    I will review the recent developments of the theories of electron transport in one-dimension and the experiments relevant to those theories. Almost all the theories on one-dimensional systems are concerned with the effects of the electron-electron interaction. We will see that the interaction effects show up in various forms depending on the structure of the system. In the pure system, a theory predicts the reduction of the conductance: absence of the reduction in the experiments is explained in terms of a proper definition of the conductance. In the presence of a potential barrier, the conductance vanishes like Tα as T → 0. This behaviour is observed experimentally in somewhat different forms. On the other hand, in a system in which a quantum dot is embedded, one observes a perfect transmission of electrons through it if the number of the electrons in the dot is odd (the Kondo effect). This phenomena is observed in a beautiful experiment. This paper is intended for those who are not experts in this field. For most problems there are several theories which give similar results. Among them, I will review the one which can be understood with the least mathematical knowledge and not necessarily the one which treated the problem for the first time. As for the experiments, I have chosen the ones in which the results are shown in the forms easily understood.

  20. Banded Electron Structure Formation in the Inner Magnetosphere

    NASA Technical Reports Server (NTRS)

    Liemohn, M. W.; Khazanov, G. V.

    1997-01-01

    Banded electron structures in energy-time spectrograms have been observed in the inner magnetosphere concurrent with a sudden relaxation of geomagnetic activity. In this study, the formation of these banded structures is considered with a global, bounce-averaged model of electron transport, and it is concluded that this structure is a natural occurrence when plasma sheet electrons are captured on closed drift paths near the Earth. These bands do not appear unless there is capture of plasma sheet electrons; convection along open drift paths making open pass around the Earth do not have time to develop this feature. The separation of high-energy bands from the injection population due to the preferential advection of the gradient-curvature drift creates spikes in the energy distribution, which overlap to form a series of bands in the energy spectrograms. The lowest band is the bulk of the injected population in the sub-key energy range. Using the Kp history for an observed banded structure event, a cloud of plasma sheet electrons is captured and the development of their distribution function is examined and discussed.

  1. Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity

    NASA Astrophysics Data System (ADS)

    Merrick, M.; Cripps, S. A.; Murdin, B. N.; Hosea, T. J. C.; Veal, T. D.; McConville, C. F.; Hopkinson, M.

    2007-08-01

    Photoluminescence (PL) has been used as a means of unambiguously observing band gap reduction in InNAs epilayers grown by molecular beam epitaxy. The observed redshift in room temperature emission as a function of nitrogen concentration is in agreement with the predictions of the band anticrossing (BAC) model, as implemented with model parameters derived from tight-binding calculations. The temperature dependence of the emission from certain samples exhibits a signature non-Varshni-like behavior indicative of electron trapping in nitrogen-related localized states below the conduction-band edge, as predicted by the linear combination of isolated nitrogen states (LCINS) model. This non-Varshni-like behavior tends to grow more pronounced with increasing nitrogen content, but for the highest nitrogen concentration studied, the more familiar Varshni-like behavior is recovered. Although unexpected, this observation is found to be consistent with the BAC and LCINS models. With consideration given to the effects of conduction-band nonparabolicity on the emission line shapes, the BAC model parameters extracted from the measured PL transition energies are found to be in excellent agreement with the predictions of the aforementioned tight-binding calculations.

  2. Evidence for Temperature-Dependent Electron Band Dispersion in Pentacene

    SciTech Connect

    Koch,N.; Vollmer, A.; Salzmann, I.; Nickel, B.; Weiss, H.; Rabe, J.

    2006-01-01

    Evidence for temperature-dependent electron band dispersion in a pentacene thin film polymorph on graphite is provided by angle- and energy-dependent ultraviolet photoelectron spectroscopy. The bands derived from the highest occupied molecular orbital exhibit dispersion of {approx}190 meV at room temperature, and {approx}240 meV at 120 K. Intermolecular electronic coupling in pentacene thin films is thus confirmed to be dependent on temperature and possibly crystal structure, as suggested by additional infrared absorption measurements.

  3. High reliability K-band electron tubes for satellite communication

    NASA Astrophysics Data System (ADS)

    Hirata, H.; Kawashima, F.

    1980-09-01

    Design methods and performance results for long life and high reliability satellite TWT and high power klystron with wide band tunability are presented. Emphasis is placed on problems observed during early operation. Tuning instability is solved by analyzing possible spurious modes at the tuner and by designing a structure to suppress spurious modes. A feedback mechanism is also discussed to handle instability in preset-tuning. Cathode design, electron beam focusing, and electron gun structure at a high frequency band are examined.

  4. Effects of Conductor Expressivity on Secondary School Band Members' Performance and Attitudes toward Conducting

    ERIC Educational Resources Information Center

    Silvey, Brian A.; Koerner, Bryan D.

    2016-01-01

    We investigated the effects of expressive and unexpressive conducting on secondary school band members' and experts' audio evaluations of band performance expressivity. A conductor, who demonstrated either expressive or unexpressive conducting techniques, led both an eighth-grade and a high school band in four separate "run-throughs" of…

  5. Electronic thermal conductivity of suspended graphene

    SciTech Connect

    Begum, K. Rizwana Sankeshwar, N. S.

    2014-04-24

    Electronic thermal conductivity, κ{sub e}, of suspended graphene is studied for 20KElectrons are assumed to be scattered by impurities, surface roughness, vacancies, inelastic optical phonons and in-plane and flexural acoustic phonons. Numerical calculations of κ{sub e}, as a function of temperature, are presented. At lower temperatures, κ{sub e}, is found to be determined mainly by vacancy (T<50K) and impurity (T<150K) scatterings. Flexural phonons influence κ{sub e} for T > 100K, becoming dominant for T > 250K. Good agreement with recent experimental data is obtained.

  6. First-principles study of doping and band gap anomalies in delafossite transparent conductive oxides

    NASA Astrophysics Data System (ADS)

    Nie, Xiliang; Wei, Su-Huai; Zhang, S. B.

    2002-03-01

    Despite the success of n-type transparent conductive oxides (TCOs) in flat panel display, solar cell, and touch panel applications, p-type TCOs are rare. Recently, however, several p-type TCO films such as SrCu_2O2 and delafossite CuM^IIIO2 where M^III=Al, Ga, and In have been successfully demonstrated. These materials have some very unusual properties: (i) The band gaps increase with increasing atomic number. This contradicts the trend in normal semiconductors including those with the same group III elements. (ii) Bipolar doping (namely both p- and n-type doping) is observed only in the largest band gap CuInO_2. This contradicts the doping limit rule [1] as no similar trend has ever been observed in any other semiconductors. Here, using first-principles method, we calculate the electronic and optical properties of CuM^IIIO_2. We found that the fundamental direct gap decreases with the increase of the atomic number, following the general trend in conventional semiconductors. But the optical band gap (which has been used in the above experiments to define the band gap) follows an opposite trend. This happens because optical transition at the fundamental direct gap is forbidden as both states have the same parity (even). On the other hand, CuInO2 has exceptionally low conduction band minimum (CBM), 1.48 eV lower than CuAlO_2. According to the doping limit rule [1], low CBM implies good n-type dopability. Our findings explain the puzzling combination of good transparency with bipolar dopability in CuInO_2. This work was supported by the U. S. DOE-SC-BES under contract No. DE-AC36-99GO10337. [1] S. B. Zhang, S. -H. Wei, and A. Zunger, J. Appl. Phys. 83, 3192 (1998).

  7. Terra MODIS Band 27 Electronic Crosstalk Effect and Its Removal

    NASA Technical Reports Server (NTRS)

    Sun, Junqiang; Xiong, Xiaoxiong; Madhavan, Sriharsha; Wenny, Brian

    2012-01-01

    The MODerate-resolution Imaging Spectroradiometer (MODIS) is one of the primary instruments in the NASA Earth Observing System (EOS). The first MODIS instrument was launched in December, 1999 on-board the Terra spacecraft. MODIS has 36 bands, covering a wavelength range from 0.4 micron to 14.4 micron. MODIS band 27 (6.72 micron) is a water vapor band, which is designed to be insensitive to Earth surface features. In recent Earth View (EV) images of Terra band 27, surface feature contamination is clearly seen and striping has become very pronounced. In this paper, it is shown that band 27 is impacted by electronic crosstalk from bands 28-30. An algorithm using a linear approximation is developed to correct the crosstalk effect. The crosstalk coefficients are derived from Terra MODIS lunar observations. They show that the crosstalk is strongly detector dependent and the crosstalk pattern has changed dramatically since launch. The crosstalk contributions are positive to the instrument response of band 27 early in the mission but became negative and much larger in magnitude at later stages of the mission for most detectors of the band. The algorithm is applied to both Black Body (BB) calibration and MODIS L1B products. With the crosstalk effect removed, the calibration coefficients of Terra MODIS band 27 derived from the BB show that the detector differences become smaller. With the algorithm applied to MODIS L1B products, the Earth surface features are significantly removed and the striping is substantially reduced in the images of the band. The approach developed in this report for removal of the electronic crosstalk effect can be applied to other MODIS bands if similar crosstalk behaviors occur.

  8. Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon

    PubMed Central

    Zhu, Zhen; Shao, Hezhu; Dong, Xiao; Li, Ning; Ning, Bo-Yuan; Ning, Xi-Jing; Zhao, Li; Zhuang, Jun

    2015-01-01

    We investigated the atomic geometry, electronic band structure, and optical absorption of nitrogen hyperdoped silicon based on first-principles calculations. The results show that all the paired nitrogen defects we studied do not introduce intermediate band, while most of single nitrogen defects can introduce intermediate band in the gap. Considering the stability of the single defects and the rapid resolidification following the laser melting process in our sample preparation method, we conclude that the substitutional nitrogen defect, whose fraction was tiny and could be neglected before, should have considerable fraction in the hyperdoped silicon and results in the visible sub-band-gap absorption as observed in the experiment. Furthermore, our calculations show that the substitutional nitrogen defect has good stability, which could be one of the reasons why the sub-band-gap absorptance remains almost unchanged after annealing. PMID:26012369

  9. Effects of Conducting Plane on Band and Choral Musicians' Perceptions of Conductor and Ensemble Expressivity

    ERIC Educational Resources Information Center

    Silvey, Brian A.; Fisher, Ryan A.

    2015-01-01

    The purpose of this study was to examine whether one aspect of conducting technique, the conducting plane, would affect band and/or choral musicians' perceptions of conductor and ensemble expressivity. A band and a choral conductor were each videotaped conducting 1-min excerpts from Morten Lauridsen's "O Magnum Mysterium" while using a…

  10. Controlling the conduction band offset for highly efficient ZnO nanorods based perovskite solar cell

    SciTech Connect

    Dong, Juan; Shi, Jiangjian; Li, Dongmei; Luo, Yanhong; Meng, Qingbo

    2015-08-17

    The mechanism of charge recombination at the interface of n-type electron transport layer (n-ETL) and perovskite absorber on the carrier properties in the perovskite solar cell is theoretically studied. By solving the one dimensional diffusion equation with different boundary conditions, it reveals that the interface charge recombination in the perovskite solar cell can be suppressed by adjusting the conduction band offset (ΔE{sub C}) at ZnO ETL/perovskite absorber interface, thus leading to improvements in cell performance. Furthermore, Mg doped ZnO nanorods ETL has been designed to control the energy band levels. By optimizing the doping amount of Mg, the conduction band minimum of the Mg doped ZnO ETL has been raised up by 0.29 eV and a positive ΔE{sub C} of about 0.1 eV is obtained. The photovoltage of the cell is thus significantly increased due to the relatively low charge recombination.

  11. Heat Conduction in Novel Electronic Films

    NASA Astrophysics Data System (ADS)

    Goodson, Kenneth E.; Ju, Y. Sungtaek

    1999-08-01

    Heat conduction in novel electronic films influences the performance and reliability of micromachined transistors, lasers, sensors, and actuators. This article reviews experimental and theoretical research on heat conduction in single-crystal semiconducting and superconducting films and superlattices, polycrystalline diamond films, and highly disordered organic and oxide films. The thermal properties of these films can differ dramatically from those of bulk samples owing to the dependence of the material structure and purity on film processing conditions and to the scattering of heat carriers at material boundaries. Predictions and data show that phonon scattering and transmission at boundaries strongly influence the thermal conductivities of single-crystal films and superlattices, although more work is needed to resolve the importance of strain-induced lattice defects. For polycrystalline films, phonon scattering on grain boundaries and associated defects causes the thermal conductivity to be strongly anisotropic and nonhomogeneous. For highly disordered films, preliminary studies have illustrated the influences of impurities on the volumetric heat capacity and, for the case of organic films, molecular orientation on the conductivity anisotropy. More work on disordered films needs to resolve the interplay among atomic-scale disorder, porosity, partial crystallinity, and molecular orientation.

  12. Electronic band structure and photoemission: A review and projection

    SciTech Connect

    Falicov, L.M.

    1987-09-01

    A brief review of electronic-structure calculations in solids, as a means of interpreting photoemission spectra, is presented. The calculations are, in general, of three types: ordinary one-electron-like band structures, which apply to bulk solids and are the basis of all other calculations; surface modified calculations, which take into account, self-consistently if at all possible, the presence of a vacuum-solid interface and of the electronic modifications caused thereby; and many-body calculations, which go beyond average-field approximations and consider dynamic rearrangement effects caused by electron-electron correlations during the photoemission process. 44 refs.

  13. Control of valence and conduction band energies in layered transition metal phosphates via surface functionalization.

    PubMed

    Lentz, Levi C; Kolb, Brian; Kolpak, Alexie M

    2016-05-18

    Layered transition metal phosphates and phosphites (TMPs) are a class of materials composed of layers of 2D sheets bound together via van der Waals interactions and/or hydrogen bonds. Explored primarily for use in proton transfer, their unique chemical tunability also makes TMPs of interest for forming large-scale hybrid materials. Further, unlike many layered materials, TMPs can readily be solution exfoliated to form single 2D sheets or bilayers, making them exciting candidates for a variety of applications. However, the electronic properties of TMPs have largely been unstudied to date. In this work, we use first-principles computations to investigate the atomic and electronic structure of TMPs with a variety of stoichiometries. We demonstrate that there exists a strong linear relationship between the band gap and the ionic radius of the transition metal cation in these materials, and show that this relationship, which opens opportunities for engineering new compositions with a wide range of band gaps, arises from constraints imposed by the phosphorus-oxygen bond geometry. In addition, we find that the energies of the valence and conduction band edges can be systematically tuned over a range of ∼3 eV via modification of the functional group extending from the phosphorus. Based on the Hammett constant of this functional group, we identify a simple, predictive relationship for the ionization potential and electron affinity of layered TMPs. Our results thus provide guidelines for systematic design of TMP-derived functional materials, which may enable new approaches for optimizing charge transfer in electronics, photovoltaics, electrocatalysts, and other applications. PMID:27157509

  14. Electronic thermal conduction in suspended graphene

    NASA Astrophysics Data System (ADS)

    Rizwana Begum, K.; Sankeshwar, N. S.

    2015-09-01

    The electronic thermal conductivity (ETC), κe, of suspended graphene (SG) is studied for 15electrons are considered to be scattered from defects along with the intrinsic in-plane acoustic phonons, out-of-plane flexural phonons (FPs) and optical phonons. The ETC is evaluated by computing the first-order perturbation distribution function by directly solving the linearized Boltzmann equation by an iterative method. Numerical calculations of the temperature and concentration dependences of κe show the dominance of charged impurity scattering at lower temperatures (T<75 K) and of FPs at higher temperatures. The results are compared with the commonly used low-temperature and high-energy relaxation time approximations. Our calculations are in good agreement with recent κe data extracted for high-mobility SG samples. The validity of Wiedemann-Franz law is also discussed.

  15. Convergence of multi-valley bands as the electronic origin of high thermoelectric performance in CoSb3 skutterudites

    NASA Astrophysics Data System (ADS)

    Tang, Yinglu; Gibbs, Zachary M.; Agapito, Luis A.; Li, Guodong; Kim, Hyun-Sik; Nardelli, Marco Buongiorno; Curtarolo, Stefano; Snyder, G. Jeffrey

    2015-12-01

    Filled skutterudites RxCo4Sb12 are excellent n-type thermoelectric materials owing to their high electronic mobility and high effective mass, combined with low thermal conductivity associated with the addition of filler atoms into the void site. The favourable electronic band structure in n-type CoSb3 is typically attributed to threefold degeneracy at the conduction band minimum accompanied by linear band behaviour at higher carrier concentrations, which is thought to be related to the increase in effective mass as the doping level increases. Using combined experimental and computational studies, we show instead that a secondary conduction band with 12 conducting carrier pockets (which converges with the primary band at high temperatures) is responsible for the extraordinary thermoelectric performance of n-type CoSb3 skutterudites. A theoretical explanation is also provided as to why the linear (or Kane-type) band feature is not beneficial for thermoelectrics.

  16. Electronic structure and band alignment at an epitaxial spinel/perovskite heterojunction.

    PubMed

    Qiao, Liang; Li, Wei; Xiao, Haiyan; Meyer, Harry M; Liang, Xuelei; Nguyen, N V; Weber, William J; Biegalski, Michael D

    2014-08-27

    The electronic properties of solid-solid interfaces play critical roles in a variety of technological applications. Recent advances of film epitaxy and characterization techniques have demonstrated a wealth of exotic phenomena at interfaces of oxide materials, which are critically dependent on the alignment of their energy bands across the interface. Here we report a combined photoemission and electrical investigation of the electronic structures across a prototypical spinel/perovskite heterojunction. Energy-level band alignment at an epitaxial Co3O4/SrTiO3(001) heterointerface indicates a chemically abrupt, type I heterojunction without detectable band bending at both the film and substrate. The unexpected band alignment for this typical p-type semiconductor on SrTiO3 is attributed to its intrinsic d-d interband excitation, which significantly narrows the fundamental band gap between the top of the valence band and the bottom of the conduction band. The formation of the type I heterojunction with a flat-band state results in a simultaneous confinement of both electrons and holes inside the Co3O4 layer, thus rendering the epitaxial Co3O4/SrTiO3(001) heterostructure to be a very promising material for high-efficiency luminescence and optoelectronic device applications. PMID:25075939

  17. H-tailored surface conductivity in narrow band gap In(AsN)

    SciTech Connect

    Velichko, A. V. E-mail: anton.velychko@nottingham.ac.uk; Patanè, A. E-mail: anton.velychko@nottingham.ac.uk; Makarovsky, O.; Capizzi, M.; Polimeni, A.; Sandall, I. C.; Tan, C. H.; Giubertoni, D.; Krier, A.; Zhuang, Q.

    2015-01-12

    We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (∼100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of ∼10{sup 18 }m{sup −2} and a high electron mobility (μ > 0.1 m{sup 2}V{sup −1}s{sup −1} at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface.

  18. Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires

    SciTech Connect

    Keleş, Ümit; Çakan, Aslı; Bulutay, Ceyhun

    2015-02-14

    We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. This reveals that ballistic transport edge lies tens to hundreds of millielectron volts above the lowest unoccupied molecular orbital, with a substantial number of localized states appearing in between, as well as above the former. We show that these localized states are not due to the oxide interface, but rather core silicon-derived. They manifest the wave nature of electrons brought to foreground by the reflections originating from NW junctions and bends. Hence, we show that the crossings and kinks of even ultraclean Si NWs possess a conduction band tail without a recourse to atomistic disorder.

  19. XANES: observation of quantum confinement in the conduction band of colloidal PbS quantum dots

    NASA Astrophysics Data System (ADS)

    Demchenko, I. N.; Chernyshova, M.; He, X.; Minikayev, R.; Syryanyy, Y.; Derkachova, A.; Derkachov, G.; Stolte, W. C.; Piskorska-Hommel, E.; Reszka, A.; Liang, H.

    2013-04-01

    The presented investigations aimed at development of inexpensive method for synthesized materials suitable for utilization of solar energy. This important issue was addressed by focusing, mainly, on electronic local structure studies with supporting x-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis of colloidal galena nano-particles (NPs) and quantum dots (QDs) synthesized using wet chemistry under microwave irradiation. Performed x-ray absorption near edge structure (XANES) analysis revealed an evidence of quantum confinement for the sample with QDs, where the bottom of the conduction band was shifted to higher energy. The QDs were found to be passivated with oxides at the surface. Existence of sulfate/sulfite and thiosulfate species in pure PbS and QDs, respectively, was identified.

  20. Conductance statistics for the power-law banded random matrix model

    SciTech Connect

    Martinez-Mendoza, A. J.; Mendez-Bermudez, J. A.; Varga, Imre

    2010-12-21

    We study numerically the conductance statistics of the one-dimensional (1D) Anderson model with random long-range hoppings described by the Power-law Banded Random Matrix (PBRM) model. Within a scattering approach to electronic transport, we consider two scattering setups in absence and presence of direct processes: 2M single-mode leads attached to one side and to opposite sides of 1D circular samples. For both setups we show that (i) the probability distribution of the logarithm of the conductance T behaves as w(lnT){proportional_to}T{sup M2/2}, for T<<, for both the critical and the non-critical samples; and (ii) at criticality there is a smooth crossover from localized-like to delocalized-like behavior in the transport properties of the PBRM model by decreasing the fractality of its eigenstates.

  1. Spin-orbit splitting of valence and conduction bands in HgTe quantum wells near the Dirac point

    NASA Astrophysics Data System (ADS)

    Minkov, G. M.; Germanenko, A. V.; Rut, O. E.; Sherstobitov, A. A.; Nestoklon, M. O.; Dvoretski, S. A.; Mikhailov, N. N.

    2016-04-01

    Energy spectra both of the conduction and valence bands of the HgTe quantum wells with a width close to the Dirac point were studied experimentally. Simultaneous analysis of the Shubnikov-de Haas oscillations and the Hall effect over a wide range of electron and hole densities yields surprising results: the top of the valence band is strongly split by spin-orbit interaction while the splitting of the conduction band is absent, within experimental accuracy. This holds true for the structures with normal and inverted band ordering. The results obtained are inconsistent with the results of kP calculations, in which the smooth electric field across the quantum well is only reckoned in. It is shown that taking into account the asymmetry of the quantum-well interfaces within a tight-binding method gives reasonable agreement with the experimental data.

  2. Formation of a protected sub-band for conduction in quantum point contacts under extreme biasing

    NASA Astrophysics Data System (ADS)

    Lee, J.; Han, J. E.; Xiao, S.; Song, J.; Reno, J. L.; Bird, J. P.

    2014-02-01

    Managing energy dissipation is critical to the scaling of current microelectronics and to the development of novel devices that use quantum coherence to achieve enhanced functionality. To this end, strategies are needed to tailor the electron-phonon interaction, which is the dominant mechanism for cooling non-equilibrium (`hot') carriers. In experiments aimed at controlling the quantum state, this interaction causes decoherence that fundamentally disrupts device operation. Here, we show a contrasting behaviour, in which strong electron-phonon scattering can instead be used to generate a robust mode for electrical conduction in GaAs quantum point contacts, driven into extreme non-equilibrium by nanosecond voltage pulses. When the amplitude of these pulses is much larger than all other relevant energy scales, strong electron-phonon scattering induces an attraction between electrons in the quantum-point-contact channel, which leads to the spontaneous formation of a narrow current filament and to a renormalization of the electronic states responsible for transport. The lowest of these states coalesce to form a sub-band separated from all others by an energy gap larger than the source voltage. Evidence for this renormalization is provided by a suppression of heating-related signatures in the transient conductance, which becomes pinned near 2e2/h (e, electron charge; h, Planck constant) for a broad range of source and gate voltages. This collective non-equilibrium mode is observed over a wide range of temperature (4.2-300 K) and may provide an effective means to manage electron-phonon scattering in nanoscale devices.

  3. Dynamical conductivity of strongly correlated electron systems at oxide interfaces

    NASA Astrophysics Data System (ADS)

    Ouellette, Daniel Gerald

    The Mott metal-insulator transition (MIT) in transition-metal complex oxides results from strong electron-electron interactions and is accompanied by a rich spectrum of phenomena, including magnetic, charge, and orbital ordering, superconductivity, structural distortions, polarons, and very high-density 2-dimensional interface electron liquids. Recent advances in oxide heteroepitaxy allow interface control as a promising new approach to tuning the exotic properties of materials near the quantum critical point, with potential application to technologies including phase-change electronics, high power transistors, and sensors. The dynamical conductivity of oxide heterostructures is measured using a combination of terahertz time-domain spectroscopy, Fourier transform infrared spectroscopy, and dc magnetotransport. The rare-earth nickelates RNiO3 (R = La, Nd...) exhibit a temperature and bandwidth controlled MIT in bulk. Measurements of the Drude response in epitaxial thin films provide quantification of the strain-dependent mass enhancement in the metallic phase due to strong correlations. Reduction of LaNiO 3 film thickness leads to additional mass renormalization attributed to structural distortions at the heteroepitaxial interface, and an MIT is observed depending on the interfacing materials in coherent perovskite heterostructures. The rare-earth titanates RTiO3 exhibit a bandwidth and band filling controlled Mott MIT. Furthermore, the heterointerface between Mott insulating GdTiO3 and band insulating SrTiO3 exhibits a 2-dimensional itinerant electron liquid, with extremely high sheet densities of 3 x 1014 cm-2. The dynamical conductivity of the interface electrons is analyzed in terms of subband-dependent electron mobility and the established large polaron dynamics in bulk SrTiO3. Additional confinement of the electron liquids is achieved by decreasing the SrTiO3 layer thickness, with attendant increase in the dynamical mass. Taking the confinement to its extreme

  4. Spin-resolved conductance of Dirac electrons through multibarrier arrays

    NASA Astrophysics Data System (ADS)

    Dahal, Dipendra; Gumbs, Godfrey; Iurov, Andrii

    We use a transfer matrix method to calculate the transmission coefficient of Dirac electrons through an arbitrary number of square potential barrier in gapped monolayer graphene(MLG) and bilayer graphene (BLG). The widths of barriers may not be chosen equal. The shift in the angle of incidence and the width of the barrier required for resonance are investigated numerically for both MLG and BLG. We compare the effects due to energy gap on these two transmission coefficient for each of these two structures (MLG and BLG). We present our results as functions of barrier width, height as well as incoming electron energy as well as band gap and examine the conditions for which perfect reflection or transmission occurs. Our transmission data are further used to calculate conductivity.

  5. Engineering flat electronic bands in quasiperiodic and fractal loop geometries

    NASA Astrophysics Data System (ADS)

    Nandy, Atanu; Chakrabarti, Arunava

    2015-11-01

    Exact construction of one electron eigenstates with flat, non-dispersive bands, and localized over clusters of various sizes is reported for a class of quasi-one-dimensional looped networks. Quasiperiodic Fibonacci and Berker fractal geometries are embedded in the arms of the loop threaded by a uniform magnetic flux. We work out an analytical scheme to unravel the localized single particle states pinned at various atomic sites or over clusters of them. The magnetic field is varied to control, in a subtle way, the extent of localization and the location of the flat band states in energy space. In addition to this we show that an appropriate tuning of the field can lead to a re-entrant behavior of the effective mass of the electron in a band, with a periodic flip in its sign.

  6. Analytical band Monte Carlo analysis of electron transport in silicene

    NASA Astrophysics Data System (ADS)

    Yeoh, K. H.; Ong, D. S.; Ooi, C. H. Raymond; Yong, T. K.; Lim, S. K.

    2016-06-01

    An analytical band Monte Carlo (AMC) with linear energy band dispersion has been developed to study the electron transport in suspended silicene and silicene on aluminium oxide (Al2O3) substrate. We have calibrated our model against the full band Monte Carlo (FMC) results by matching the velocity-field curve. Using this model, we discover that the collective effects of charge impurity scattering and surface optical phonon scattering can degrade the electron mobility down to about 400 cm2 V‑1 s‑1 and thereafter it is less sensitive to the changes of charge impurity in the substrate and surface optical phonon. We also found that further reduction of mobility to ∼100 cm2 V‑1 s‑1 as experimentally demonstrated by Tao et al (2015 Nat. Nanotechnol. 10 227) can only be explained by the renormalization of Fermi velocity due to interaction with Al2O3 substrate.

  7. Correlation effects and electronic properties of Cr-substituted SZn with an intermediate band.

    PubMed

    Tablero, C

    2005-09-15

    A study using first principles of the electronic properties of S32Zn31Cr, a material derived from the SZn host semiconductor where a Cr atom has been substituted for each of the 32 Zn atoms, is presented. This material has an intermediate band sandwiched between the valence and conduction bands of the host semiconductor, which in a formal band-theoretic picture is metallic because the Fermi energy is located within the impurity band. The potential technological application of these materials is that when they are used to absorb photons in solar cells, the efficiency increases significantly with respect to the host semiconductor. An analysis of the gaps, bandwidths, density of states, total and orbital charges, and electronic density is carried out. The main effects of the local-density approximation with a Hubbard term corrections are an increase in the bandwidth, a modification of the relative composition of the five d and p transition-metal orbitals, and a splitting of the intermediate band. The results demonstrate that the main contribution to the intermediate band is the Cr atom. For values of U greater than 6 eV, where U is the empirical Hubbard term U parameter, this band is unfolded, thus creating two bands, a full one below the Fermi energy and an empty one above it, i.e., a metal-insulator transition. PMID:16392585

  8. Valence and Conduction Band Densities of States of Metal Halide Perovskites: A Combined Experimental–Theoretical Study

    PubMed Central

    2016-01-01

    We report valence and conduction band densities of states measured via ultraviolet and inverse photoemission spectroscopies on three metal halide perovskites, specifically methylammonium lead iodide and bromide and cesium lead bromide (MAPbI3, MAPbBr3, CsPbBr3), grown at two different institutions on different substrates. These are compared with theoretical densities of states (DOS) calculated via density functional theory. The qualitative agreement achieved between experiment and theory leads to the identification of valence and conduction band spectral features, and allows a precise determination of the position of the band edges, ionization energy and electron affinity of the materials. The comparison reveals an unusually low DOS at the valence band maximum (VBM) of these compounds, which confirms and generalizes previous predictions of strong band dispersion and low DOS at the MAPbI3 VBM. This low DOS calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites. PMID:27364125

  9. Valence and Conduction Band Densities of States of Metal Halide Perovskites: A Combined Experimental-Theoretical Study.

    PubMed

    Endres, James; Egger, David A; Kulbak, Michael; Kerner, Ross A; Zhao, Lianfeng; Silver, Scott H; Hodes, Gary; Rand, Barry P; Cahen, David; Kronik, Leeor; Kahn, Antoine

    2016-07-21

    We report valence and conduction band densities of states measured via ultraviolet and inverse photoemission spectroscopies on three metal halide perovskites, specifically methylammonium lead iodide and bromide and cesium lead bromide (MAPbI3, MAPbBr3, CsPbBr3), grown at two different institutions on different substrates. These are compared with theoretical densities of states (DOS) calculated via density functional theory. The qualitative agreement achieved between experiment and theory leads to the identification of valence and conduction band spectral features, and allows a precise determination of the position of the band edges, ionization energy and electron affinity of the materials. The comparison reveals an unusually low DOS at the valence band maximum (VBM) of these compounds, which confirms and generalizes previous predictions of strong band dispersion and low DOS at the MAPbI3 VBM. This low DOS calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites. PMID:27364125

  10. Direct Observation of Electrostatically Driven Band Gap Renormalization in a Degenerate Perovskite Transparent Conducting Oxide.

    PubMed

    Lebens-Higgins, Z; Scanlon, D O; Paik, H; Sallis, S; Nie, Y; Uchida, M; Quackenbush, N F; Wahila, M J; Sterbinsky, G E; Arena, Dario A; Woicik, J C; Schlom, D G; Piper, L F J

    2016-01-15

    We have directly measured the band gap renormalization associated with the Moss-Burstein shift in the perovskite transparent conducting oxide (TCO), La-doped BaSnO_{3}, using hard x-ray photoelectron spectroscopy. We determine that the band gap renormalization is almost entirely associated with the evolution of the conduction band. Our experimental results are supported by hybrid density functional theory supercell calculations. We determine that unlike conventional TCOs where interactions with the dopant orbitals are important, the band gap renormalization in La-BaSnO_{3} is driven purely by electrostatic interactions. PMID:26824566

  11. Enlarged band gap and electron switch in graphene-based step-barrier structure

    SciTech Connect

    Lu, Wei-Tao Ye, Cheng-Zhi; Li, Wen

    2013-11-04

    We study the transmission through a step-barrier in gapped graphene and propose a method to enlarge the band gap. The step-barrier structure consists of two or more barriers with different strengths. It is found that the band gap could be effectively enlarged and controlled by adjusting the barrier strengths in the light of the mass term. Klein tunneling at oblique incidence is suppressed due to the asymmetry of step-barrier, contrary to the cases in single-barrier and superlattices. Furthermore, a tunable conductance channel could be opened up in the conductance gap, suggesting an application of the structure as an electron switch.

  12. Role of interface band structure on hot electron transport

    NASA Astrophysics Data System (ADS)

    Garramone, John J.

    Knowledge of electron transport through materials and interfaces is fundamentally and technologically important. For example, metal interconnects within integrated circuits suffer increasingly from electromigration and signal delay due to an increase in resistance from grain boundary and sidewall scattering since their dimensions are becoming shorter than the electron mean free path. Additionally, all semiconductor based devices require the transport of electrons through materials and interfaces where scattering and parallel momentum conservation are important. In this thesis, the inelastic and elastic scattering of hot electrons are studied in nanometer thick copper, silver and gold films deposited on silicon substrates. Hot electrons are electron with energy greater than kBT above the Fermi level (EF). This work was performed utilizing ballistic electron emission microscopy (BEEM) which is a three terminal scanning tunneling microscopy (STM) technique that measures the percentage of hot electrons transmitted across a Schottky barrier interface. Hot electron attenuation lengths of the metals were extracted by measuring the BEEM current as a function of metal overlayer thickness for both hot electron and hot hole injection at 80 K and under ultra high vacuum. The inelastic and elastic scattering lengths were extracted by fitting the energetic dependence of the measured attenuation lengths to a Fermi liquid based model. A sharp increase in the attenuation length is observed at low injection energies, just above the Schottky barrier height, only for metals on Si(001) substrates. In contrast, the attenuation length measured on Si(111) substrates shows a sharp decrease. These results indicate that interface band structure and parallel momentum conservation have significant impact upon the transport of hot electrons across non epitaxial metal-semiconductor interfaces. In addition, they help to separate effects upon hot electron transport that are inherent to the metal

  13. Electronic transitions in GdN band structure

    SciTech Connect

    Vidyasagar, R. Kita, T.; Sakurai, T.; Ohta, H.

    2014-05-28

    Using the near-infrared (NIR) absorbance spectroscopy, electronic transitions and spin polarization of the GdN epitaxial film have been investigated; and the GdN epitaxial film was grown by a reactive rf sputtering technique. The GdN film exhibited three broad bands in the NIR frequency regimes; and those bands are attributable primarily to the minority and majority spin transitions at the X-point and an indirect transition along the Γ-X symmetric direction of GdN Brillouin zone. We experimentally observe a pronounced red-shift of the indirect band gap when cooling down below the Curie temperature which is ascribed to the orbital-dependent coulomb interactions of Gd-5dxy electrons, which tend to push-up the N-2p bands. On the other hand, we have evaluated the spin polarization of 0.17 (±0.005), which indicates that the GdN epitaxial film has almost 100% spin-polarized carriers. Furthermore, the experimental result of GdN electronic transitions are consistent with the previous reports and are thus well-reproduced. The Arrott plots evidenced that the Curie temperature of GdN film is 36 K and the large spin moment is explained by the nitrogen vacancies and the intra-atomic exchange interaction.

  14. Conduction band population in graphene in ultrashort strong laser field: Case of massive Dirac particles

    NASA Astrophysics Data System (ADS)

    Ahmadi, Z.; Goudarzi, H.; Jafari, A.

    2016-05-01

    The Dirac-like quasiparticles in honeycomb graphene lattice are taken to possess a non-zero effective mass. The charge carriers involve to interact with a femtosecond strong laser pulse. Due to the scattering time of electrons in graphene (τ ≈10-100 fs), the one femtosecond optical pulse is used to establish the coherence effect and, consequently, it can be realized to use the time-dependent Schrödinger equation for electron coupled with strong electromagnetic field. Generalized wave vector of relativistic electrons interacting with electric field of laser pulse causes to obtain a time-dependent electric dipole matrix element. Using the coupled differential equations of a two-state system of graphene, the density of probability of population transition between valence (VB) and conduction bands (CB) of gapped graphene is calculated. In particular, the effect of bandgap energy on dipole matrix elements at the Dirac points and resulting CB population (CBP) is investigated. The irreversible electron dynamics is achieved when the optical pulse end. Increasing the energy gap of graphene results in decreasing the maximum CBP.

  15. Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics

    SciTech Connect

    King, Sean W. Brockman, Justin; Bielefeld, Jeff; French, Marc; Kuhn, Markus; Paquette, Michelle M.; Otto, Joseph W.; Caruso, A. N.; French, Benjamin

    2014-03-10

    To facilitate the design of heterostructure devices employing hexagonal/sp{sup 2} boron nitride, x-ray photoelectron spectroscopy has been utilized in conjunction with prior reflection electron energy loss spectroscopy measurements to determine the valence and conduction band offsets (VBOs and CBOs) present at interfaces formed between amorphous hydrogenated sp{sup 2} boron nitride (a-BN:H) and various low- and high-dielectric-constant (k) amorphous hydrogenated silicon network dielectric materials (a-SiX:H, X = O, N, C). For a-BN:H interfaces formed with wide-band-gap a-SiO{sub 2} and low-k a-SiOC:H materials (E{sub g} ≅ 8.2−8.8 eV), a type I band alignment was observed where the a-BN:H band gap (E{sub g} = 5.5 ± 0.2 eV) was bracketed by a relatively large VBO and CBO of ∼1.9 and 1.2 eV, respectively. Similarly, a type I alignment was observed between a-BN:H and high-k a-SiC:H where the a-SiC:H band gap (E{sub g} = 2.6 ± 0.2 eV) was bracketed by a-BN:H with VBO and CBO of 1.0 ± 0.1 and 1.9 ± 0.2 eV, respectively. The addition of O or N to a-SiC:H was observed to decrease the VBO and increase the CBO with a-BN:H. For high-k a-SiN:H (E{sub g} = 3.3 ± 0.2 eV) interfaces with a-BN:H, a slightly staggered type II band alignment was observed with VBO and CBO of 0.1 ± 0.1 and −2.3 ± 0.2 eV, respectively. The measured a-BN:H VBOs were found to be consistent with those deduced via application of the commutative and transitive rules to VBOs reported for a-BN:H, a-SiC:H, a-SiN:H, and a-SiO{sub 2} interfaces with Si (100)

  16. The electronic structures of vanadate salts: Cation substitution as a tool for band gap manipulation

    NASA Astrophysics Data System (ADS)

    Dolgos, Michelle R.; Paraskos, Alexandra M.; Stoltzfus, Matthew W.; Yarnell, Samantha C.; Woodward, Patrick M.

    2009-07-01

    The electronic structures of six ternary metal oxides containing isolated vanadate ions, Ba 3(VO 4) 2, Pb 3(VO 4) 2, YVO 4, BiVO 4, CeVO 4 and Ag 3VO 4 were studied using diffuse reflectance spectroscopy and electronic structure calculations. While the electronic structure near the Fermi level originates largely from the molecular orbitals of the vanadate ion, both experiment and theory show that the cation can strongly influence these electronic states. The observation that Ba 3(VO 4) 2 and YVO 4 have similar band gaps, both 3.8 eV, shows that cations with a noble gas configuration have little impact on the electronic structure. Band structure calculations support this hypothesis. In Pb 3(VO 4) 2 and BiVO 4 the band gap is reduced by 0.9-1.0 eV through interactions of (a) the filled cation 6 s orbitals with nonbonding O 2 p states at the top of the valence band, and (b) overlap of empty 6 p orbitals with antibonding V 3 d-O 2 p states at the bottom of the conduction band. In Ag 3VO 4 mixing between filled Ag 4 d and O 2 p states destabilizes states at the top of the valence band leading to a large decrease in the band gap ( Eg=2.2 eV). In CeVO 4 excitations from partially filled 4 f orbitals into the conduction band lower the effective band gap to 1.8 eV. In the Ce 1-xBi xVO 4 (0≤ x≤0.5) and Ce 1-xY xVO 4 ( x=0.1, 0.2) solid solutions the band gap narrows slightly when Bi 3+ or Y 3+ are introduced. The nonlinear response of the band gap to changes in composition is a result of the localized nature of the Ce 4 f orbitals.

  17. Discrete Electronic Bands in Semiconductors and Insulators: Potential High-Light-Yield Scintillators

    DOE PAGESBeta

    Shi, Hongliang; Du, Mao-Hua

    2015-05-12

    Bulk semiconductors and insulators typically have continuous valence and conduction bands. In this paper, we show that valence and conduction bands of a multinary semiconductor or insulator can be split to narrow discrete bands separated by large energy gaps. This unique electronic structure is demonstrated by first-principles calculations in several quaternary elpasolite compounds, i.e., Cs2NaInBr6, Cs2NaBiCl6, and Tl2NaBiCl6. The narrow discrete band structure in these quaternary elpasolites is due to the large electronegativity difference among cations and the large nearest-neighbor distances in cation sublattices. We further use Cs2NaInBr6 as an example to show that the narrow bands can stabilize self-trappedmore » and dopant-bound excitons (in which both the electron and the hole are strongly localized in static positions on adjacent sites) and promote strong exciton emission at room temperature. The discrete band structure should further suppress thermalization of hot carriers and may lead to enhanced impact ionization, which is usually considered inefficient in bulk semiconductors and insulators. Finally, these characteristics can enable efficient room-temperature light emission in low-gap scintillators and may overcome the light-yield bottleneck in current scintillator research.« less

  18. Discrete Electronic Bands in Semiconductors and Insulators: Potential High-Light-Yield Scintillators

    SciTech Connect

    Shi, Hongliang; Du, Mao-Hua

    2015-05-12

    Bulk semiconductors and insulators typically have continuous valence and conduction bands. In this paper, we show that valence and conduction bands of a multinary semiconductor or insulator can be split to narrow discrete bands separated by large energy gaps. This unique electronic structure is demonstrated by first-principles calculations in several quaternary elpasolite compounds, i.e., Cs2NaInBr6, Cs2NaBiCl6, and Tl2NaBiCl6. The narrow discrete band structure in these quaternary elpasolites is due to the large electronegativity difference among cations and the large nearest-neighbor distances in cation sublattices. We further use Cs2NaInBr6 as an example to show that the narrow bands can stabilize self-trapped and dopant-bound excitons (in which both the electron and the hole are strongly localized in static positions on adjacent sites) and promote strong exciton emission at room temperature. The discrete band structure should further suppress thermalization of hot carriers and may lead to enhanced impact ionization, which is usually considered inefficient in bulk semiconductors and insulators. Finally, these characteristics can enable efficient room-temperature light emission in low-gap scintillators and may overcome the light-yield bottleneck in current scintillator research.

  19. Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

    SciTech Connect

    Li, Wei; Zhang, Qin; Kirillov, Oleg A.; Levin, Igor; Richter, Curt A.; Gundlach, David J.; Nguyen, N. V. E-mail: liangxl@pku.edu.cn; Bijesh, R.; Datta, S.; Liang, Yiran; Peng, Lian-Mao; Liang, Xuelei E-mail: liangxl@pku.edu.cn

    2014-11-24

    We report experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al{sub 2}O{sub 3}/InAs/GaSb layer structure, the barrier height from the top of the InAs and GaSb valence bands to the bottom of the Al{sub 2}O{sub 3} conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of the Al{sub 2}O{sub 3} valence band to the bottom of the InAs and GaSb conduction bands. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted models of electron quantum tunneling efficiency and transistor performance.

  20. Electronic- and band-structure evolution in low-doped (Ga,Mn)As

    SciTech Connect

    Yastrubchak, O.; Gluba, L.; Żuk, J.; Sadowski, J.; MAX-Lab, Lund University, 22100 Lund ; Krzyżanowska, H.; Department of Physics and Astronomy, Vanderbilt University, 6506 Stevenson Center, Nashville, Tennessee 37325 ; Domagala, J. Z.; Andrearczyk, T.; Wosinski, T.

    2013-08-07

    Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in (Ga,Mn)As layers with higher Mn content and p-type conductivity indicates the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free-hole concentration. The experimental results are consistent with the valence-band origin of mobile holes mediating ferromagnetic ordering in the (Ga,Mn)As diluted ferromagnetic semiconductor.

  1. Nature of the band gap and origin of the conductivity of PbO2 revealed by theory and experiment.

    PubMed

    Scanlon, David O; Kehoe, Aoife B; Watson, Graeme W; Jones, Martin O; David, William I F; Payne, David J; Egdell, Russell G; Edwards, Peter P; Walsh, Aron

    2011-12-01

    Lead dioxide has been used for over a century in the lead-acid battery. Many fundamental questions concerning PbO2 remain unanswered, principally: (i) is the bulk material a metal or a semiconductor, and (ii) what is the source of the high levels of conductivity? We calculate the electronic structure and defect physics of PbO2, using a hybrid density functional, and show that it is an n-type semiconductor with a small indirect band gap of ∼0.2  eV. The origin of electron carriers in the undoped material is found to be oxygen vacancies, which forms a donor state resonant in the conduction band. A dipole-forbidden band gap combined with a large carrier induced Moss-Burstein shift results in a large effective optical band gap. The model is supported by neutron diffraction, which reveals that the oxygen sublattice is only 98.4% occupied, thus confirming oxygen substoichiometry as the electron source. PMID:22243014

  2. Nature of the Band Gap and Origin of the Conductivity of PbO2 Revealed by Theory and Experiment

    NASA Astrophysics Data System (ADS)

    Scanlon, David O.; Kehoe, Aoife B.; Watson, Graeme W.; Jones, Martin O.; David, William I. F.; Payne, David J.; Egdell, Russell G.; Edwards, Peter P.; Walsh, Aron

    2011-12-01

    Lead dioxide has been used for over a century in the lead-acid battery. Many fundamental questions concerning PbO2 remain unanswered, principally: (i) is the bulk material a metal or a semiconductor, and (ii) what is the source of the high levels of conductivity? We calculate the electronic structure and defect physics of PbO2, using a hybrid density functional, and show that it is an n-type semiconductor with a small indirect band gap of ˜0.2eV. The origin of electron carriers in the undoped material is found to be oxygen vacancies, which forms a donor state resonant in the conduction band. A dipole-forbidden band gap combined with a large carrier induced Moss-Burstein shift results in a large effective optical band gap. The model is supported by neutron diffraction, which reveals that the oxygen sublattice is only 98.4% occupied, thus confirming oxygen substoichiometry as the electron source.

  3. Optical analysis of doped ZnO thin films using nonparabolic conduction-band parameters

    NASA Astrophysics Data System (ADS)

    Kim, J. S.; Jeong, J.-h.; Park, J. K.; Baik, Y. J.; Kim, I. H.; Seong, T.-Y.; Kim, W. M.

    2012-06-01

    The optical properties of impurity doped ZnO thin films were analyzed by taking into account the nonparabolicity in the conduction-band and the optically determined carrier concentration and mobility were correlated with those measured by Hall measurement. The Drude parameters obtained by applying a simple Drude model combined with the Lorentz oscillator model for the optical transmittance and reflectance spectrum were analyzed by using the carrier density dependent bare band effective mass determined by the first-order nonparabolicity approximation. The squared plasma energy multiplied by the carrier density dependent effective mass yielded fairly linear relationship with respect to the carrier concentration in wide carrier density range of 1019 - 1021 cm-3, verifying the applicability of the nonparabolicity parameter for various types of impurity doped ZnO thin films. The correlation between the optical and Hall analyses was examined by taking the ratios of optical to Hall measurements for carrier density, mobility, and resistivity by introducing a parameter, Rdl, which represents the ratio of the resistances to electron transport from the inside of the lattice and from the crystallographic defects. For both the carrier concentration and mobility, the ratios of optical to Hall measurements were shown to exhibit a monotonically decreasing function of Rdl, indicating that the parameter Rdl could be used as a yardstick in correlating the optically determined carrier density and mobility with those measured by Hall analysis.

  4. Molecular electronics: A DNA that conducts

    NASA Astrophysics Data System (ADS)

    Scheer, Elke

    2014-12-01

    Experiments with conducting atomic force microscopy provide a clear demonstration of long-range charge transport in G-quadruplex DNA molecules, and allow a hopping transport model to be developed that could also be applied to other conductive polymers.

  5. Mixed ionic and electronic conductivity in polymers

    SciTech Connect

    Shriver, D.F.

    1990-06-01

    The conductivity of iodine-containing polymers was investigated and conductivity along polyiodide chains is implicated by the concentration dependence of the conductivity data and spectroscopic measurements. On the theoretical side, entropy based models were developed to describe ion motion in polymers.

  6. Cyclotron side-band emissions from ring-current electrons

    NASA Technical Reports Server (NTRS)

    Maeda, K.

    1976-01-01

    The paper examines temporal variations in electron energy spectra and pitch-angle distributions during a VLF-emission event observed by Explorer 45 in the main phase of a magnetic storm. It is noted that the observed event occurred outside the plasmasphere on the night side of the magnetosphere and that the dusk-side plasmapause had a double structure during the event. It is found that the VLF emissions consisted of two frequency bands, corresponding to the whistler and electrostatic modes, and that there was a sharp band of 'missing emissions' along frequencies equal to half the equatorial electron gyrofrequency. A peculiar pitch-angle distribution for high-energy electrons (50 to 350 keV) is noted. It is concluded that the VLF-producing particles were enhanced low-energy (about 5 keV) ring-current electrons which penetrated into the night side of the magnetosphere from the magnetotail plasma sheet and which drifted eastward after encountering the steep gradient of the geomagnetic field.

  7. Electronic conductance of a two-dimensional electron gas in the presence of periodic potentials

    NASA Astrophysics Data System (ADS)

    Takagaki, Y.; Ferry, D. K.

    1992-04-01

    We utilize mode-matching and transfer-matrix methods to study the transport properties of an electron through two-dimensionally modulated periodic potentials. The model structures treated here are finite-size one- and two-dimensional arrays of quantum boxes (lateral surface superlattice) and antidots. The structure is divided into a chain of uniform waveguide sections in the direction of current flow, and mode matching is imposed across the boundaries. The transfer-matrix technique is utilized to obtain the transmission probability for the composite superlattice structures. Energy dependences of the two-terminal conductance are presented in terms of the transition from one-dimensional to two-dimensional transport. Increasing the number of quantum boxes in the lateral surface superlattice shows that Lorentzian-shaped transmission resonances in a single quantum box are brought together to form a Bloch band structure. Complete reflections over broad energy ranges, due to the formation of minigaps, and a strong resonant behavior due to discrete states in minibands are observed in the energy dependence of the conductance. For the antidot lattice, the formation of the Bloch band structure is found to arise as a drop in the conductance. If attractive scattering centers are embedded in a two-dimensional electron gas, transmission resonances due to quasibound states are observed.

  8. Electronic band gaps and transport in Cantor graphene superlattices

    NASA Astrophysics Data System (ADS)

    Xu, Yi; He, Ying; Yang, Yanfang; Zhang, Huifang

    2015-04-01

    The electronic band gap and transport in Cantor graphene superlattices are investigated theoretically. It is found that such fractal structure can possess an unusual Dirac point located at the energy corresponding to the zero-averaged wave number (zero- k ‾) . The location of the Dirac point shifts to lower energy with the increase of order number. The zero- k ‾ gap is robust against the lattice constants and less sensitive to the incidence angle. Moreover, multi-Dirac-points may appear by adjusting the lattice constants and the order, and an expression for their location is derived. The control of electron transport in such fractal structure may lead to potential applications in graphene-based electronic devices.

  9. Interacting quasi-band theory for electronic states in compound semiconductor alloys: Wurtzite structure

    NASA Astrophysics Data System (ADS)

    Kishi, Ayaka; Oda, Masato; Shinozuka, Yuzo

    2016-05-01

    This paper reports on the electronic states of compound semiconductor alloys of wurtzite structure calculated by the recently proposed interacting quasi-band (IQB) theory combined with empirical sp3 tight-binding models. Solving derived quasi-Hamiltonian 24 × 24 matrix that is characterized by the crystal parameters of the constituents facilitates the calculation of the conduction and valence bands of wurtzite alloys for arbitrary concentrations under a unified scheme. The theory is applied to III–V and II–VI wurtzite alloys: cation-substituted Al1‑ x Ga x N and Ga1‑ x In x N and anion-substituted CdS1‑ x Se x and ZnO1‑ x S x . The obtained results agree well with the experimental data, and are discussed in terms of mutual mixing between the quasi-localized states (QLS) and quasi-average bands (QAB): the latter bands are approximately given by the virtual crystal approximation (VCA). The changes in the valence and conduction bands, and the origin of the band gap bowing are discussed on the basis of mixing character.

  10. Detecting band inversions by measuring the environment: fingerprints of electronic band topology in bulk phonon linewidths

    NASA Astrophysics Data System (ADS)

    Saha, Kush; Legare, Katherine; Garate, Ion

    The interplay between topological phases of matter and dissipative baths constitutes an emergent research topic with links to condensed matter, photonic crystals, cold atomic gases and quantum information. While recent studies suggest that dissipative baths can induce topological phases in intrinsically trivial quantum materials, the backaction of topological invariants on dissipative baths is overlooked. By exploring this back action for a centrosymmetric Dirac insulator coupled to phonons, we show that the linewidths of bulk optical phonons can reveal electronic band inversions. This result is the first known example where topological phases of an open quantum system may be detected by measuring the bulk properties of the surrounding environment.

  11. Electronic Conduction and the Electronic Properties of Prussian Blue and Some Related Hexacyanoferrates.

    NASA Astrophysics Data System (ADS)

    Xidis, Anthony Louis

    Electron conductivities are reported for dry thin films of Prussian Blue (PB) and its partially oxidized (Berlin Green (BG)), completely oxidized (Prussian Yellow (PY)) as well as completely reduced (Everitt's salt (ES)) forms. Conductivities are also reported for bulk samples of PB (both the soluble and insoluble). BG and ruthenium purple (RP). It has been discovered that desiccated PB films are non-ohmic in the sense that significant electron conduction does not occur below a threshold of +/ -0.5 V. BG, PY and ES are ohmic and do not have a conduction threshold. Bulk samples of soluble PB show electrochemical activity below the 0.5 V. threshold, but the small currents involved indicate that this is only occurring at the surface. Insoluble bulk samples display no electrochemical activity, while both the soluble and insoluble display the 0.5 V volt threshold. Conductivities of the PB, PY, BG and ES films, as determined by the slopes of their i-V curves, are essentially the same with values of ca. 2times10^{-7} (ohm-cm)^{-1}. The solid state voltammogram of a wet PB film is also considered in terms of the persistence of the threshold and the onset of electrochemistry. We propose a qualitative explanation for the threshold voltage based on the assumption that the "valence band" (ferric ferrocyanide) is completely occupied heterogeneous electron transfer. An electrochemical equation of continuity is introduced in order to consider charge transport within the film. It is shown that no charge carrier concentration gradients occur within the film under constant current (steady state) conditions. Conduction in mixed valent films is discussed and it is shown that in electroactive, consisting of mobile ions and electrons, the applied field produces an unmixing current which is opposed by a mixing current produced by gradients in film composition.

  12. Electron-Phonon Renormalization of Electronic Band Structures of C Allotropes and BN Polymorphs

    NASA Astrophysics Data System (ADS)

    Tutchton, Roxanne M.; Marchbanks, Christopher; Wu, Zhigang

    The effect of lattice vibration on electronic band structures has been mostly neglected in first-principles calculations because the electron-phonon (e-ph) renormalization of quasi-particle energies is often small (< 100 meV). However, in certain materials, such as diamond, the electron-phonon coupling reduces the band gap by nearly 0.5 eV, which is comparable to the many-body corrections of the electronic band structures calculated using the density functional theory (DFT). In this work, we compared two implementations of the Allen-Heine-Cardona theory in the EPW code and the ABINIT package respectively. Our computations of Si and diamond demonstrate that the ABINIT implementation converges much faster. Using this method, the e-ph renormalizations of electronic structures of three C allotropes (diamond, graphite, graphene) and four BN polymorphs (zincblend, wurtzite, mono-layer, and layered-hexagonal) were calculated. Our results suggest that (1) all of the zero-point renormalizations of band gaps in these materials, except for graphene, are larger than 100 meV, and (2) there are large variations in e-ph renormalization of band gaps due to differences in crystal structure. This work was supported by a U.S. DOE Early Career Award (Grant No. DE-SC0006433). Computations were carried out at the Golden Energy Computing Organization at CSM and the National Energy Research Scientific Computing Center (NERSC).

  13. Electronic Tongue Containing Redox and Conductivity Sensors

    NASA Technical Reports Server (NTRS)

    Buehler, Martin

    2007-01-01

    The Electronic Tongue (E-tongue 2) is an assembly of sensors for measuring concentrations of metal ions and possibly other contaminants in water. Potential uses for electronic tongues include monitoring the chemical quality of water in a variety of natural, industrial, and laboratory settings, and detecting micro-organisms indirectly by measuring microbially influenced corrosion. The device includes a heater, a temperature sensor, an oxidation/reduction (redox) sensor pair, an electrical sensor, an array of eight galvanic cells, and eight ion-specific electrodes.

  14. Effect of extended line defects on thermal conduction of carbon nanotubes: analyzing phonon structures by band unfolding

    NASA Astrophysics Data System (ADS)

    Huang, Huaqing

    2015-08-01

    We theoretically investigate the effect of extended line defects (ELDs) on thermal transport properties of carbon nanotubes (CNTs) using nonequilibrium Green’s function method. Our study shows that the thermal conductance of CNTs with ELDs can be 25% lower than that of pristine CNTs. By extending the application of the recently developed unfolding method for electronic structures to phonon spectra, we find that the unfolded phonon bands of defected CNTs are split with obvious gap opening, leading to lower phonon transmissions. Further phonon local density of states analysis reveals that the change of bonding configuration near the ELD in defected CNTs can tail the degree of phonon localization. Our results indicate that introducing ELDs might be an efficient way to control thermal conduction of CNTs. The extended unfolding method for phonon systems, found to be efficient in this work, is expected to be applicable to other systems with densely folded phonon bands.

  15. Theoretical studies of electronic band-tail states, Anderson transition and surfaces of amorphous semiconductors

    NASA Astrophysics Data System (ADS)

    Dong, Jianjun

    In this dissertation, we study the Anderson transition within the electronic band tail states, and amorphous surfaces. The disorder induced band tail states is one of the unique character of amorphous semiconductors. Because of the proximity to the Fermi level, the nature of these band tail states is of obvious interest to theory of doping and transport. The study of amorphous solid surface is also an interesting area for theory. It is possible to have some major rearrangements near surfaces of amorphous solids (the amorphous analog of surface reconstruction), and the local bonding environment could be dramatically different from that of bulk. The study of the surfaces can also help people toward understanding the growth mechanism. First, electronic band tail states of amorphous silicon and amorphous diamond were studied based on the large (4096 atom) and realistic structural models. To solve the large tight-binding Hamiltonian matrices, we used two order N methods: the maximum entropy method for computing the total densities of states, and the modified Lanczos techniques for computing the individual energy eigenstates in the band gap regions. The DC conductivity was estimated with the Kubo formula. Next, the structural and electronic properties of the surfaces of tetrahedral amorphous carbon (ta-C) were also studied with a first-principles, local basis LDA technique. We reported two structural models made under different conditions, and examined the transition of the local bonding environment from the bulk to the surface. In the study of band tail states, we observe that Anderson (local-to-extended) transition within the band states proceeds by "cluster proliferation". We interpret the nature of band tail states in terms of a "resonant cluster model" through which one can qualitatively understand the evolution of the states from midgap toward the mobility edges. In the study of ta-C surfaces, we observe that nearly 50% surface atoms are threefold coordinated and

  16. The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

    NASA Astrophysics Data System (ADS)

    Batool, Z.; Hild, K.; Hosea, T. J. C.; Lu, X.; Tiedje, T.; Sweeney, S. J.

    2012-06-01

    The GaBixAs1-x bismide III-V semiconductor system remains a relatively underexplored alloy particularly with regards to its detailed electronic band structure. Of particular importance to understanding the physics of this system is how the bandgap energy Eg and spin-orbit splitting energy Δo vary relative to one another as a function of Bi content, since in this alloy it becomes possible for Δo to exceed Eg for higher Bi fractions, which occurrence would have important implications for minimising non-radiative Auger recombination losses in such structures. However, this situation had not so far been realised in this system. Here, we study a set of epitaxial layers of GaBixAs1-x (2.3% ≤ x ≤ 10.4%), of thickness 30-40 nm, grown compressively strained onto GaAs (100) substrates. Using room temperature photomodulated reflectance, we observe a reduction in Eg, together with an increase in Δo, with increasing Bi content. In these strained samples, it is found that the transition energy between the conduction and heavy-hole valence band edges is equal with that between the heavy-hole and spin-orbit split-off valence band edges at ˜9.0 ± 0.2% Bi. Furthermore, we observe that the strained valence band heavy-hole/light-hole splitting increases with Bi fraction at a rate of ˜15 (±1) meV/Bi%, from which we are able to deduce the shear deformation potential. By application of an iterative strain theory, we decouple the strain effects from our experimental measurements and deduce Eg and Δo of free standing GaBiAs; we find that Δo indeed does come into resonance with Eg at ˜10.5 ± 0.2% Bi. We also conclude that the conduction/valence band alignment of dilute-Bi GaBiAs on GaAs is most likely to be type-I.

  17. Conduction mechanism in Polyaniline-flyash composite material for shielding against electromagnetic radiation in X-band & Ku band

    NASA Astrophysics Data System (ADS)

    Singh, Avanish Pratap; Anoop Kumar, S.; Chandra, Amita; Dhawan, S. K.

    2011-06-01

    β-Naphthalene sulphonic acid (β-NSA) doped polyaniline (PANI)-flyash (FA) composites have been prepared by chemical oxidative polymerization route whose conductivity lies in the range 2.37-21.49 S/cm. The temperature dependence of electrical conductivity has also been recorded which shows that composites follow Mott's 3D-VRH model. SEM images demonstrate that β-NSA leads to the formation of the tubular structure with incorporated flyash phase. TGA studies show the improvement in thermal stability of composites with increase in loading level of flyash. Complex parameters i.e. permittivity (ɛ* = ɛ'- iɛ″) and permeability (μ*=μ'- iμ″) of PANI-FA composites have been calculated from experimental scattering parameters (S11 & S21) using theoretical calculations given in Nicholson-Ross and Weir algorithms. The microwave absorption properties of the composites have been studied in X-band (8.2 - 12.4 GHz) & Ku-Band (12.4 - 18 GHz) frequency range. The maximum shielding effectiveness observed was 32dB, which strongly depends on dielectric loss and volume fraction of flyash in PANI matrix.

  18. Global Kinetic Modeling of Banded Electron Structures in the Plasmasphere

    NASA Technical Reports Server (NTRS)

    Liemohn, M. W.; Khazanov, G. V.

    1997-01-01

    Significant fluxes of 10 eV to 30 keV electrons have been detected in the plasmasphere, appearing as banded structures in energy with broad spatial extents and slowly evolving over several days. It is thought that these populations are decaying plasma sheet electrons injected into the corotating region of near-Earth space. This capture can occur when the convective electric field drops rapidly and the Alfven boundary suddenly outward, trapping the inner edge of the plasma sheet along closed drift paths. Our bounce-averaged kinetic model of superthermal electron transport is able to simulate this capture and the subsequent drift, diffusion, and decay of the plasma cloud. Results of this simulation will be shown and discussed, from the initial injection during the elevated convection to the final loss of the particles. It is thought that not only Coulomb collisions but also wave-particle interactions play a significant role in altering the plasma cloud. Quasilinear diffusion is currently being incorporated into the model and the importance of this mechanism will be examined. Also, the high anisotropy of the trapped population could be unstable and generate plasma waves. These and other processes will be investigated to determine the final fate of the cloud and to quantify where, how, and when the energy of the plasma cloud is deposited. Comparisons with CRRES observations of these events are shown to verify the model and explain the data.

  19. The superatom states of fullerenes and their hybridization into the nearly free electron bands of fullerites.

    PubMed

    Zhao, Jin; Feng, Min; Yang, Jinlong; Petek, Hrvoje

    2009-04-28

    Motivated by the discovery of the superatom states of C60 molecules, we investigate the factors that influence their energy and wave function hybridization into nearly free electron bands in molecular solids. As the n = 3 solutions of the radial Schrodinger equation of the central attractive potential consisting of the short-range C atom core and the long-range collective screening potentials, respectively, located on the icosahedral C60 molecule shell and within its hollow core, superatom states are distinguished by their atom-like orbitals corresponding to different orbital angular momentum states (l = 0, 1, 2,...). Because they are less tightly bound than the pi orbitals, that is, the n = 2 states, which are often exploited in the intermolecular electron transport in aromatic organic molecule semiconductors, superatom orbitals hybridize more extensively among aggregated molecules to form bands with nearly free electron dispersion. The prospect of exploiting the strong intermolecular coupling to achieve metal-like conduction in applications such as molecular electronics may be attained by lowering the energy of superatom states from 3.5 eV for single chemisorbed C60 molecules to below the Fermi level; therefore, we study how the superatom state energies depend on factors such as their aggregation into 1D-3D solids, cage size, and exo- and endohedral doping by metal atoms. We find, indeed, that if the ionization potential of endohedral atom, such as copper, is sufficiently large, superatom states can form the conduction band in the middle of the gap between the HOMO and LUMO of the parent C60 molecule. Through a plane-wave density functional theory study, we provide insights for a new paradigm for intermolecular electronic interaction beyond the conventional one among the sp(n) hybridized orbitals of the organic molecular solids that could lead to design of novel molecular materials and quantum structures with extraordinary optical and electronic properties. PMID

  20. The Superatom States of Fullerenes and Their Hybridization into the Nearly Free Electron Bands of Fullerites

    SciTech Connect

    Zhao, Jin; Feng, Min; Yang, Jinlong; Petek, Hrvoje

    2009-04-07

    Motivated by the discovery of the superatom states of C₆₀ molecules, we investigate the factors that influence their energy and wave function hybridization into nearly free electron bands in molecular solids. As the n = 3 solutions of the radial Schro¨dinger equation of the central attractive potential consisting of the shortrange C atom core and the long-range collective screening potentials, respectively, located on the icosahedral C60 molecule shell and within its hollow core, superatom states are distinguished by their atom-like orbitals corresponding to different orbital angular momentum states (l = 0, 1, 2,...). Because they are less tightly bound than the π orbitals, that is, the n = 2 states, which are often exploited in the intermolecular electron transport in aromatic organic molecule semiconductors, superatom orbitals hybridize more extensively among aggregated molecules to form bands with nearly free electron dispersion. The prospect of exploiting the strong intermolecular coupling to achieve metal-like conduction in applications such as molecular electronics may be attained by lowering the energy of superatom states from 3.5 eV for single chemisorbed C₆₀ molecules to below the Fermi level; therefore, we study how the superatom state energies depend on factors such as their aggregation into 1D - 3D solids, cage size, and exo- and endohedral doping by metal atoms. We find, indeed, that if the ionization potential of endohedral atom, such as copper, is sufficiently large, superatom states can form the conduction band in the middle of the gap between the HOMO and LUMO of the parent C₆₀ molecule. Through a plane-wave density functional theory study, we provide insights for a new paradigm for intermolecular electronic interaction beyond the conventional one among the spn hybridized orbitals of the organic molecular solids that could lead to design of novel molecular materials and quantum structures with extraordinary optical and

  1. Wavefunction Properties and Electronic Band Structures of High-Mobility Semiconductor Nanosheet MoS2

    NASA Astrophysics Data System (ADS)

    Baik, Seung Su; Lee, Hee Sung; Im, Seongil; Choi, Hyoung Joon; Ccsaemp Team; Edl Team

    2014-03-01

    Molybdenum disulfide (MoS2) nanosheet is regarded as one of the most promising alternatives to the current semiconductors due to its significant band-gap and electron-mobility enhancement upon exfoliating. To elucidate such thickness-dependent properties, we have studied the electronic band structures of bulk and monolayer MoS2 by using the first-principles density-functional method as implemented in the SIESTA code. Based on the wavefunction analyses at the conduction band minimum (CBM) points, we have investigated possible origins of mobility difference between bulk and monolayer MoS2. We provide formation energies of substitutional impurities at the Mo and S sites, and discuss feasible electron sources which may induce a significant difference in the carrier lifetime. This work was supported by NRF of Korea (Grant Nos. 2009-0079462 and 2011-0018306), Nano-Material Technology Development Program (2012M3a7B4034985), and KISTI supercomputing center (Project No. KSC-2013-C3-008). Center for Computational Studies of Advanced Electronic Material Properties.

  2. Post-precipitation bias in band-tailed pigeon surveys conducted at mineral sites

    USGS Publications Warehouse

    Overton, C.T.; Schmitz, R.A.; Casazza, M.L.

    2005-01-01

    Many animal surveys to estimate populations or index trends include protocol prohibiting counts during rain but fail to address effects of rainfall preceding the count. Prior research on Pacific Coast band-tailed pigeons (Patagioenas fasciata monilis) documented declines in use of mineral sites during rainfall. We hypothesized that prior precipitation was associated with a short-term increase in use of mineral sites following rain. We conducted weekly counts of band-tailed pigeons at 19 Pacific Northwest mineral sites in 2001 and 20 sites in 2002. Results from regression analysis indicated higher counts ???2 days after rain (11.31??5.00% [x????SE]) compared to ???3 days. Individual index counts conducted ???2 days after rain were biased high, resulting in reduced ability to accurately estimate population trends. Models of band-tailed pigeon visitation rates throughout the summer showed increased mineral-site counts during both June and August migration periods, relative to the July breeding period. Our research supported previous studies recommending that mineral-site counts used to index the band-tailed pigeon population be conducted during July. We further recommend conducting counts >3 days after rain to avoid weather-related bias in index estimation. The design of other population sampling strategies that rely on annual counts should consider the influence of aberrant weather not only coincident with but also preceding surveys if weather patterns are thought to influence behavior or detection probability of target species.

  3. Conduction band mass determinations for n-type InGaAs/InAlAs single quantum wells

    SciTech Connect

    Jones, E.D.; Reno, J.L.; Kotera, Nobuo; Wang, Y.

    1998-05-01

    The authors report the measurement of the conduction band mass in n-type single 27-ML-wide InGaAs/InAlAs quantum well lattice matched to InP using two methods: (1) Magnetoluminescence spectroscopy and (2) far-infrared cyclotron resonance. The magnetoluminescence method utilizes Landau level transitions between 0 and 14 T at 1.4 K. The far infrared cyclotron resonance measurements were made at 4.2 K and to fields as large up to 18 T. The 2D-carrier density N{sub 2D} = 3 {times} 10{sup 11} cm{sup {minus}2} at low temperatures. The magnetoluminescence technique yielded an effective conduction-band mass of m{sub c} = 0.062m{sub 0} while the far infrared cyclotron resonance measurements gave m{sub c} = 0.056m{sub 0}, where m{sub 0} is the free electron mass. Both measurements show no evidence for any significant conduction-band nonparabolicity.

  4. Thermally activated band conduction and variable range hopping conduction in Cu2ZnSnS4 thin films

    NASA Astrophysics Data System (ADS)

    Zubair Ansari, Mohd; Khare, Neeraj

    2015-01-01

    The temperature dependence of electrical conductivity of the Cu2ZnSnS4 (CZTS) thin films has been measured in order to identify the dominant conduction mechanism. These CZTS film have been deposited by ultrasonic assisted chemical vapor deposition method at different substrate temperatures in a single step process. All the films exhibit p-type semiconducting behaviour. In the high temperature range (> 250 K), the dominance of thermally activated band conduction is observed, whereas in the lower temperature region (250-70 K), the hopping conduction is present. Detailed analysis of the temperature dependence of conductivity of the films reveals that in the temperature range from 250-170 K, nearest neighbour hopping dominates, whereas in the lower temperature region (170-70 K), the dominant hopping conduction is Mott's 3D variable range hopping and not Efros-Shklovskii variable range hopping. The value of Mott's temperature is found to decrease for the CZTS films deposited at higher temperature, which has been attributed to enhanced density of states at the Fermi level.

  5. Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Guduru, V. K.; Granados del Aguila, A.; Wenderich, S.; Kruize, M. K.; McCollam, A.; Christianen, P. C. M.; Zeitler, U.; Brinkman, A.; Rijnders, G.; Hilgenkamp, H.; Maan, J. C.

    2013-02-01

    The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high mobility electron channel in addition to a low mobility electron channel which exists before illumination.

  6. Effect of boron localized states on the conduction band transport in BxGa1-xP

    NASA Astrophysics Data System (ADS)

    Petznick, S.; Ostheim, L.; Klar, P. J.; Liebich, S.; Volz, K.; Stolz, W.

    2014-12-01

    We study the magnetotransport properties of an n-type (B,Ga)P:Te alloy and an n-type GaP:Te reference under hydrostatic pressure up to 17 kilobars in the temperature range from 1.5 to 300 K. The free carrier concentration and the mobility of the reference sample are almost independent of the applied hydrostatic pressure at room temperature. In contrast, the free carrier concentration as well as the mobility in the B0.012Ga0.988P:Te alloy increase by about 30% over the accessible pressure range. The observations are explained by assuming that a boron-related density of localized states exists in the vicinity of the conduction band edge of the alloy. These boron states act as electron traps as well as efficient scatter centers. Applying hydrostatic pressure shifts the energetic positions of conduction band edge at the X-point (where the electron transport takes place) and of the boron states apart reducing the impact of boron on the electronic transport properties of the alloy.

  7. Conduction band offset determination between strained CdSe and ZnSe layers using DLTS

    SciTech Connect

    Rangel-Kuoppa, Victor-Tapio

    2013-12-04

    The conduction band offset between strained CdSe layers embedded in unintentionally n-type doped ZnSe is measured and reported. Two samples, consisting of thirty Ultra Thin Quantum Wells (UTQWs) of CdSe embedded in ZnSe, grown by Atomic Layer Epitaxy, are used for this study. The thicknesses of the UTQWs are one and three monolayers (MLs) in each sample, respectively. As expected, the sample with one ML UTQWs does not show any energy level in the UTQWs due to the small thickness of the UTQWs, while the thickness of the sample with 3 ML UTQWs is large enough to form an energy level inside the UTQWs. This energy level appears as a majority trap with an activation energy of 223.58 ± 9.54 meV. This corresponds to UTQWs with barrier heights (the conduction band offset) between 742 meV and 784 meV. These values suggest that the band gap misfit between strained CdSe and ZnSe is around 70.5 to 74 % in the conduction band.

  8. Narrow-band impedance of a round metallic pipe with a low conductive thin layer

    NASA Astrophysics Data System (ADS)

    Ivanyan, M.; Grigoryan, A.; Tsakanian, A.; Tsakanov, V.

    2014-02-01

    The new traveling wave structure with a single synchronous mode resonantly excited by the relativistic charge is presented. The structure is composed of a metallic tube with an internally coated low conductive thin layer. It is shown that the impedance of the internally coated metallic tube has a narrow-band single resonance at a high frequency. The analytical presentation of the narrow-band impedance, the wake function, and the frequency of the synchronous mode are obtained. The analytical solutions are compared with exact numerical simulations using the field matching technique.

  9. Quantal Heating of Conducting Electrons with Discrete Spectrum

    SciTech Connect

    Vitkalov, S. A.; Bykov, A. A.

    2011-12-23

    Usually heating of conducting electrons by dc electric field results in an increase of electron temperature. In this paper we show that the dc heating of 2D electrons, placed in quantized magnetic fields, results in a peculiar electron distribution, which has the same broadening or an effective 'temperature' as the unbiased electron system. The quantal heating, however, violates strongly the Ohm's Law. In the conducting system with discrete electron spectrum the quantal heating results in spectacular decrease of electron resistance and transition of the electrons into a state with zero differential resistance (ZDR). Finally the heating leads to apparent dc driven metal-insulator transition, which correlates with the transition into the ZDR state. The correlation is very unexpected and is not understood.

  10. Organic photovoltaic cell incorporating electron conducting exciton blocking layers

    SciTech Connect

    Forrest, Stephen R.; Lassiter, Brian E.

    2014-08-26

    The present disclosure relates to photosensitive optoelectronic devices including a compound blocking layer located between an acceptor material and a cathode, the compound blocking layer including: at least one electron conducting material, and at least one wide-gap electron conducting exciton blocking layer. For example, 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA/PTCBI compound blocking layer structure increased power conversion efficiency is achieved, compared to an analogous device using a conventional blocking layers shown to conduct electrons via damage-induced midgap states.

  11. Towards improved understanding and conductivity in band-gap-tunable zinc magnesium oxide

    NASA Astrophysics Data System (ADS)

    Ke, Yi

    Alloying MgO into ZnO substantially increases the band-gap energy but reduces the conductivity and makes it harder to be doped with donors. While the former makes it attractive as energy-level-tunable transparent conducting contacts, the latter limits its applications. By combining high quality material synthesis, characterization and theory, we attribute the major limitation on the electrical conductivity of epitaxial Ga-doped Zn0.7Mg0.3O to intrinsic acceptors, such as zinc vacancies, which both trap carriers and increase the ionized impurity scattering (IIS). In addition, it shows that zinc vacancies can form defect complexes with Ga substituted on a Zn site (GaZn) during annealing, and this can increase the mobility by reducing the number of IIS centers. This work establishes that enhancing defect pairing is an effective strategy to increase mobility in semiconductors where IIS limits the transport. Epitaxial Zn0.7Mg0.3O:Ga (1%) thin films were deposited on c-sapphire substrates by pulsed laser deposition. Temperature-dependent Hall effect measurements results indicate that the samples are degenerately n-doped and the mobility is limited by IIS. However, the doping efficiency of Ga is only around 40%. TEM imaging and composition analysis indicate that neither extended defects nor impurities are present at sufficient levels to account for the low ionization efficiency. Thus, we consider intrinsic defects. The detailed analysis of electrical properties suggests that ionized electron killers are present. First-principles calculations of formation enthalpies find that zinc vacancies (VZn) have the lowest formation enthalpy among intrinsic acceptors. Considering a simple model with just four kinds of defects (isolated GaZn, isolated VZn, GaZn-VZn pairs and 2GaZn-VZn clusters), we can derive their concentrations from four independent equations with measured n, micro and Ga concentration as inputs. Analysis performed on samples with different annealing times shows

  12. Band Alignment and Controllable Electron Migration between Rutile and Anatase TiO2

    PubMed Central

    Mi, Yang; Weng, Yuxiang

    2015-01-01

    TiO2 is the most promising semiconductor for photocatalytic splitting of water for hydrogen and degradation of pollutants. The highly photocatalytic active form is its mixed phase of two polymorphs anatase and rutile rather than their pristine compositions. Such a synergetic effect is understood by the staggered band alignment favorable to spatial charge separation. However, electron migration in either direction between the two phases has been reported, the reason of which is still unknown. We determined the band alignment by a novel method, i.e., transient infrared absorption-excitation energy scanning spectra, showing their conduction bands being aligned, thus the electron migration direction is controlled by dynamical factors, such as varying the particle size of anatase, putting electron or hole scavengers on either the surface of anatase or rutile phases, or both. A quantitative criterion capable of predicting the migration direction under various conditions including particle size and surface chemical reactions is proposed, the predictions have been verified experimentally in several typical cases. This would give rise to a great potential in designing more effective titania photocatalysts. PMID:26169699

  13. Damping Effect Studies for X-band Normal Conducting High Gradient Standing Wave Structures

    SciTech Connect

    Pei, S.; Li, Z.; Tantawi, S.G.; Dolgashev, V.A.; Wang, J.; /SLAC

    2009-08-03

    The Multi-TeV colliders should have the capability to accelerate low emittance beam with high rf efficiency, X-band normal conducting high gradient accelerating structure is one of the promising candidate. However, the long range transverse wake field which can cause beam emittance dilution is one of the critical issues. We examined effectiveness of dipole mode damping in three kinds of X-band, {pi}-mode standing wave structures at 11.424GHz with no detuning considered. They represent three damping schemes: damping with cylindrical iris slot, damping with choke cavity and damping with waveguide coupler. We try to reduce external Q factor below 20 in the first two dipole bands, which usually have very high (R{sub T}/Q){sub T}. The effect of damping on the acceleration mode is also discussed.

  14. Effect of Cd Addition in Band Gap and Volume Conductivity of SeTe Based Glasses

    NASA Astrophysics Data System (ADS)

    Saraswat, Vibhav K.; Kishore, V.; Saraswat, Y. K.; Saxena, N. S.

    2011-10-01

    Presented paper discusses the variation in optical band gap and volume dc conductivity of Se-Te-Cd ternary Chalcogenide glasses as a function of concentration of Cd i.e. the composition of the glasses. Also, the temperature dependence of volume conductivity has been studied. The amorphous nature of these glasses has been confirmed by XRD patterns. Keithley Electrometer/High resistance meter 6517A was used in its FVMI mode to record I_V characteristics at different temperatures. Variation in conductivity, derived from I_V curves, as a function of composition of sample could be accounted for the bonds formed in the system. Additionally, the Poole-Frenkel conduction mechanism has also been verified in order to investigate the good agreement with the established fact that most of Chalcogenide glasses obey the Poole-Frenkel conduction mechanism. Absorption spectra were recorded using Ocean Optics USB2000 spectrophotometer in visible region. Band gap calculation using Tauc relation reveals that the system under test is semi-conducting in nature. The observed results are found to be in good agreement with each other.

  15. Method of forming electronically conducting polymers on conducting and nonconducting substrates

    NASA Technical Reports Server (NTRS)

    Murphy, Oliver J. (Inventor); Hitchens, G. Duncan (Inventor); Hodko, Dalibor (Inventor); Clarke, Eric T. (Inventor); Miller, David L. (Inventor); Parker, Donald L. (Inventor)

    2001-01-01

    The present invention provides electronically conducting polymer films formed from photosensitive formulations of pyrrole and an electron acceptor that have been selectively exposed to UV light, laser light, or electron beams. The formulations may include photoinitiators, flexibilizers, solvents and the like. These solutions can be used in applications including printed circuit boards and through-hole plating and enable direct metallization processes on non-conducting substrates. After forming the conductive polymer patterns, a printed wiring board can be formed by sensitizing the polymer with palladium and electrolytically depositing copper.

  16. Electronic crosstalk in Terra MODIS thermal emissive bands

    NASA Astrophysics Data System (ADS)

    Sun, Junqiang; Madhavan, Sriharsha; Xiong, Xiaoxiong; Wang, Menghua

    2015-09-01

    The MODerate-resolution Imaging Spectroradiometer (MODIS) is a legacy Earth remote sensing instrument in the National Aeronautics and Space Administration (NASA) Earth Observing System (EOS). The first MODIS instrument was launched in December 1999 on board the Terra spacecraft. MODIS has 36 bands, among which bands 20-25 and bands 27-36 are thermal emissive bands covering a wavelength range from 3.7μm to 14.2μm. It has been found that there are severe contaminations in Terra bands 27-30 (6.7 μm - 9.73 μm) due to crosstalk of signals among themselves. The crosstalk effect induces strong striping artifacts in the Earth View (EV) images and causes large long-term drifts in the EV brightness temperature (BT) in these bands. An algorithm using a linear approximation derived from on-orbit lunar observations has been developed to correct the crosstalk effect for them. It was demonstrated that the crosstalk correction can substantially reduce the striping noise in the EV images and significantly remove the long-term drifts in the EV BT in the Long Wave InfraRed (LWIR) water vapor channels (bands 27-28). In this paper, the crosstalk correction algorithm previously developed is applied to correct the crosstalk effect in the remaining LWIR bands 29 and 30. The crosstalk correction successfully reduces the striping artifact in the EV images and removes long-term drifts in the EV BT in bands 29-30 as was done similarly for bands 27-28. The crosstalk correction algorithm can thus substantially improve both the image quality and the radiometric accuracy of the Level 1B (L1B) products of the LWIR PV bands, bands 27-30. From this study it is also understood that other Terra MODIS thermal emissive bands are contaminated by the crosstalk effect and that the algorithm can be applied to these bands for crosstalk correction.

  17. Electronic band structure calculations of bismuth-antimony nanowires

    NASA Astrophysics Data System (ADS)

    Levin, Andrei; Dresselhaus, Mildred

    2012-02-01

    Alloys of bismuth and antimony received initial interest due to their unmatched low-temperature thermoelectric performance, and have drawn more recent attention as the first 3D topological insulators. One-dimensional bismuth-antimony (BiSb) nanowires display interesting quantum confinement effects, and are expected to exhibit even better thermoelectric properties than bulk BiSb. Due to the small, anisotropic carrier effective masses, the electronic properties of BiSb nanowires show great sensitivity to nanowire diameter, crystalline orientation, and alloy composition. We develop a theoretical model for calculating the band structure of BiSb nanowires. For a given crystalline orientation, BiSb nanowires can be in the semimetallic, direct semiconducting, or indirect semiconducting phase, depending on nanowire diameter and alloy composition. These ``phase diagrams'' turn out to be remarkably similar among the different orientations, which is surprising in light of the anisotropy of the bulk BiSb Fermi surface. We predict a novel direct semiconducting phase for nanowires with diameter less than ˜15 nm, over a narrow composition range. We also find that, in contrast to the bulk and thin film BiSb cases, a gapless state with Dirac dispersion cannot be realized in BiSb nanowires.

  18. Electronic Power Conditioner for Ku-band Travelling Wave Tube

    NASA Astrophysics Data System (ADS)

    Kowstubha, Palle; Krishnaveni, K.; Ramesh Reddy, K.

    2016-07-01

    A highly sophisticated regulated power supply is known as electronic power conditioner (EPC) is required to energise travelling wave tubes (TWTs), which are used as RF signal amplifiers in satellite payloads. The assembly consisting of TWT and EPC together is known as travelling wave tube amplifier (TWTA). EPC is used to provide isolated and conditioned voltage rails with tight regulation to various electrodes of TWT and makes its RF performance independent of solar bus variations which are caused due to varying conditions of eclipse and sunlit. The payload mass and their power consumption is mainly due to the existence of TWTAs that represent about 35 % of total mass and about 70-90 % (based on the type of satellite application) of overall dc power consumption. This situation ensures a continuous improvement in the design of TWTAs and their associated EPCs to realize more efficient and light products. Critical technologies involved in EPCs are design and configuration, closed loop regulation, component and material selection, energy limiting of high voltage (HV) outputs and potting of HV card etc. This work addresses some of these critical technologies evolved in realizing and testing the state of art of EPC and it focuses on the design of HV supply with a HV and high power capability, up to 6 kV and 170 WRF, respectively required for a space TWTA. Finally, an experimental prototype of EPC with a dc power of 320 W provides different voltages required by Ku-band TWT in open loop configuration.

  19. Near valence-band electronic properties of semiconducting β -Ga2O3 (100) single crystals

    NASA Astrophysics Data System (ADS)

    Navarro-Quezada, A.; Alamé, S.; Esser, N.; Furthmüller, J.; Bechstedt, F.; Galazka, Z.; Skuridina, D.; Vogt, P.

    2015-11-01

    β -Ga2O3 is a transparent wide-band-gap semiconductor that has attracted considerable interest in recent years due to its suitable electrical conductivity and transparency in the ultraviolet spectral region. In this work we investigate the electronic properties of the near valence-band-edge region for semiconducting β -Ga2O3 (100) bulk single crystals using core-level photoelectron spectroscopy and ab initio theory within the framework of density functional theory and the GW approach. We find good agreement between the experimental results and the theoretical calculations. This is explained by the hybridization of the Ga 3 d and O 2 s states, similar as for In2O3 .

  20. Electronic band structure of the layered compound Td-WTe2

    NASA Astrophysics Data System (ADS)

    Augustin, J.; Eyert, V.; Böker, Th.; Frentrup, W.; Dwelk, H.; Janowitz, C.; Manzke, R.

    2000-10-01

    We have studied the electronic structure of the layered compound Td-WTe2 experimentally using high-resolution angle-resolved photoelectron spectroscopy, and theoretically using density-functional based augmented spherical wave calculations. Comparison of the measured and calculated data shows in general good agreement. The theoretical results reveal the semimetallic as well as metallic character of Td-WTe2; the semimetallic character is due to a 0.5 eV overlap of Te 5p- and W 5d-like bands along Γ-Y, while the metallic character is due to two classical metallic bands. The rather low conductivity of Td-WTe2 is interpreted as resulting from a low density of states at the Fermi level.

  1. Indirect Band Gap Emission by Hot Electron Injection in Metal/MoS2 and Metal/WSe2 Heterojunctions

    NASA Astrophysics Data System (ADS)

    Li, Zhen; Ezhilarasu, Goutham; Chatzakis, Ioannis; Dhall, Rohan; Chen, Chun-Chung; Cronin, Stephen

    Transition metal dichalcogenides (TMDCs), such as MoS2 and WSe2, are free of dangling bonds, therefore make more `ideal' Schottky junctions than bulk semiconductors, which produce recombination centers at the interface with metals, inhibiting charge transfer. Here, we observe a more than 10X enhancement in the indirect band gap PL of TMDCs deposited on various metals, while the direct band gap emission remains unchanged. We believe the main mechanism of light emission arises from photoexcited hot electrons in the metal that are injected into the conduction band of MoS2 and WSe2, and subsequently recombine radiatively with minority holes. Since the conduction band at the K-point is 0.5eV higher than at the Σ-point, a lower Schottky barrier of the Σ-point band makes electron injection more favorable. Also, the Σ band consists of the sulfur pz orbital, which overlaps more significantly with the electron wavefunctions in the metal. This enhancement only occurs for thick flakes, and is absent in monolayer and few-layer flakes. Here, the flake thickness must exceed the depletion width of the Schottky junction, in order for efficient radiative recombination to occur in the TMDC. The intensity of this indirect peak decreases at low temperatures. Reference: DOI: 10.1021/acs.nanolett.5b00885

  2. Temperature dependence of the InGaPN conduction band structure

    NASA Astrophysics Data System (ADS)

    Lin, K. I.; Wang, T. S.; Hwang, J. S.

    2008-03-01

    Material properties of III-N-V alloys, such as GaAsN, InGaAsN, and InGaPN, have been intensively studied, because a small amount of nitrogen (N) incorporation results in very large bandgap bowing and dramatic change in the band structure.^1,2 Recently, temperature dependence of the parameters, i.e. the localized states energy EN introduced by an isolated N and the interaction potential V, of the band anticrossing (BAC) model in GaAsN epilayers has been reported.^3 These properties have never been studied for InGaPN. In this work, temperature-dependent photoreflectance (PR) measurements are employed to characterize the conduction band structure of In0.54Ga0.46P1-yNy (y = 0 and 0.02) grown on GaAs substrates. The band gap and the upper subband E+ are observed in InGaPN as predicted by the BAC model. To investigate the energetic positions of the features in the PR spectra, a Kramers-Kronig analysis is proposed. Based on these PR data and the BAC model, we find EN=2.054 eV and V=1.513 eV at 293 K. With decreasing temperature, the energy of EN shifts significantly to higher energies. Simultaneously, the interaction potential V between the N states and the host conduction band also rises to higher values. The thermal shifts of EN and V are dEN/dT -0.43 meV/K and dV/dT -0.67 meV/K, respectively. 1.APL 88, 031907 (2006). 2.APL 89, 192116 (2006). 3.APL 89, 202105 (2006).

  3. Electronic Band Structure and Optical Properties of Srn+1TinO3n+1 Ruddlesden-Popper Homologous Series

    NASA Astrophysics Data System (ADS)

    Reshak, Ali Hussain; Auluck, Sushil; Kityk, Ivan

    2008-07-01

    State-of-the-art calculations of electronic band structures, density of states and frequency-dependent optical properties have been reported for Srn+1TinO3n+1 (n=1, 2, 3, ∞) compounds. These materials possess indirect wide energy band gaps. The frequency dependent optical properties of n=1,2,3 compounds show considerable anisotropy and positive birefringence. The conduction band minimum is originates from Ti-d states, while the valence band maximum is governed by O-p states. The bandwidth of the Ti-d states is responsible for the decrease in the energy band gap as n changes from 1 to 2, 3, and ∞. We have analyzed the degree of hybridization on the basis of the ratio of the orbital overlapping within the muffin tin sphere.

  4. Effects of Ag-induced acceptor defects on the band gap tuning and conductivity of Li:ZnO films

    NASA Astrophysics Data System (ADS)

    Li, Jian-Chang; Cao, Qing; Hou, Xue-Yan

    2013-05-01

    The effects of Ag-induced acceptor defects on the band gap tuning and conductivity of Li:ZnO film grown by the sol-gel method were investigated. The structural analyses indicate that the Ag-Li:ZnO films possess hexagonal structure with the substitutional Ag defect at the Zn site (AgZn) and the interstitial Li defect (Lii). The decreased film transmittance and band gap with Ag-Li codoping is mainly due to the incorporation of foreign impurity levels by the AgZn and Lii defects. The electrical measurements reveal that doping can obviously improve the film conductivity, which could be attributed to the reduction of the grain boundary scattering and the inter-diffusion of the Ag nanoparticles, as well as the decreased ionization energy of the acceptor owing to the AgZn defects. The electronic structures of Ag-Li:ZnO were further studied by the first-principles calculations and the results show that the AgZn defects may lead to p-type conductivity of ZnO.

  5. Impact ionization across the conduction-band-edge discontinuity of quantum-well heterostructures

    NASA Technical Reports Server (NTRS)

    Chuang, S. L.; Hess, K.

    1986-01-01

    Impact ionization across the band-edge discontinuity of quantum-well heterostructures is studied theoretically. A heterolayer structure of alternating Al(x)Ga(1-x)As and GaAs layers is considered where the GaAs layers are heavily doped with donors. Thus a large number of electrons is confined to the quantum-well region. Incident electrons are heated up by applied electric fields and collide with the electrons confined in the well regions. Both the ionization rate as a function of the incident energy, and average ionization rates are computed. Device applications of such multiple quantum-well structures and the possibility of a complete analog to the conventional photomultiplier are discussed.

  6. Anomalous conductivity and secondary electron emission in Hall effect thrusters

    SciTech Connect

    Garrigues, L.; Hagelaar, G. J. M.; Boniface, C.; Boeuf, J. P.

    2006-12-15

    This paper is devoted to the study of the effects of electron-wall interactions on cross magnetic field electron momentum and energy losses in Hall effect thrusters. By coupling a semianalytical model of the wall sheath similar to models used by several authors in this context, with a two-dimensional hybrid simulation of a Hall effect thruster, we find that the cross magnetic field conductivity enhanced by electron-wall collisions and secondary electron emission is not sufficient to explain the conductivity deduced from experiments. Calculated current-voltage curves including electron-wall collisions from a standard sheath model as the sole 'anomalous' conductivity mechanism do not reproduce the measurements, especially at high discharge voltages, and for various wall ceramics. Results also show that a one-dimensional description of electron-wall collisions with a constant radial plasma density profile as used by many authors leads to an overestimation of the contribution of electron-wall interactions to cross magnetic field conductivity.

  7. Pure-oxygen radiative shocks with electron thermal conduction

    NASA Technical Reports Server (NTRS)

    Borkowski, Kazimierz J.; Shull, J. Michael

    1990-01-01

    Steady state radiative shock models in gas composed entirely of oxygen are calculated with the purpose of explaining observations of fast-moving knots in Cas A and other oxygen-rich SNRs. Models with electron thermal conduction differ significantly from models in which conduction is neglected. Conduction reduces postshock electron temperatures by a factor of 7-10 and flattens temperature gradients. The O III ion, whose forbidden emission usually dominates the observed spectra, is present over a wide range of shock velocities, from 100 to 170 km/s. The electron temperature in the O III forbidden line formation region is 30,000 K, in agreement with the 20,000 K derived from observations. All models with conduction have extensive warm (T above 4000 K) photoionization zones, which provides better agreement with observed optical O I line strengths.

  8. Vertical photoionization of liquid-to-supercritical ammonia: thermal effects on the valence-to-conduction band gap.

    PubMed

    Urbanek, Janus; Vöhringer, Peter

    2013-07-25

    We recently reported first femtosecond pump–probe experiments on the geminate recombination dynamics of solvated electrons in fluid ammonia (Urbanek et al., J. Phys. Chem. B 2012, 116, 2223–2233). The electrons were generated through a vertical two-photon ionization at a total energy of 9.3 eV. Here, we present a full Monte Carlo analysis of the time-resolved data to determine the solvated electron’s thermalization distance from the ionization hole, NH(3)(+). The simulations are compared with the experiment over wide thermodynamic conditions to obtain insight into the dependence of the vertical ionization mechanism on the electronic properties of the solvent network. The simulations reveal that the average thermalization distance, , decreases strongly with both increasing temperature, T, and decreasing density, ρ, from 3.2 nm in the cryogenic fluid down to roughly 0.5 nm in the dilute supercritical phase with almost gas-like densities. We combine our results with the current understanding of the T,ρ-dependence of the electronic structure of the liquid phase and discuss in detail the role of thermally induced energy level shifts for the valence-to-conduction band gap. The observed changes of the thermalization distance can be well attributed to a gradual decrease of the excess energy initially imparted on the ejected electron as gas-like conditions are progressively approached. PMID:23815751

  9. Longitudinal and transverse vibration control of electronic conductance of a ladder-like graphene nanoribbon

    NASA Astrophysics Data System (ADS)

    Esmaili, Esmat; Mardaani, Mohammad; Rabani, Hassan

    2016-09-01

    The coherent electronic transport in a lengthy narrow nanoribbon, which the atoms of a part of it vibrate in some special modes, is modeled analytically within the tight-binding and harmonic approximations. For the small vibrations, the longitudinal and transverse modes are discussed separately. Two in-plane and one out-of-plane vibrating modes are assumed for the vibratory part which is considered as the center wire. The modes which cause the phononic excitations leading to electron-phonon (e-ph) interaction, are chosen in order to present exact analytic formulation. Moreover, we suppose that the bonds in the benzene rings in the center wire are the same or not the same as the rings in the other parts. We found that in-plane atomic vibrations have greater influence on the conductance with respect to the out-of-plane one. Since two conductance channels contribute in the transport, in the overlapping region of their energy bands, the conductance is affected more by the e-ph interaction. Furthermore, the increase electron scattering originating from decrease of electron group velocity, destroys the conductance at the edges of the system energy band.

  10. Role of Electronic Structure In Ion Band State Theory of Low Energy Nuclear Reactions

    NASA Astrophysics Data System (ADS)

    Chubb, Scott

    2004-03-01

    The Nuts and Bolts of our Ion Band State (IBS) theory of low energy nuclear reactions (LENR's) in palladium-deuteride (PdD) and palladium-hydride (PdH) are the electrons that hold together or tear apart the bonds (or lack of bonds) between deuterons (d's) or protons (p's) and the host material. In PdDx and PdH_x, this bonding is strongly correlated with loading: in ambient loading conditions (x< 0. 6), the bonding in hibits IBS occupation. As x arrow 1, slight increases and decreases in loading can lead to vibrations (which have conventionally been thought to occur from phonons) that can induce potential losses or increases of p/d. Naive assumptions about phonons fail to include these losses and increases. These effects can occur because neither H or D has core electrons and because in either PdD or PdH, the electrons near the Fermi Energy have negligible overlap with the nucleus of either D or H. I use these ideas to develop a formal justification, based on a generalization of conventional band theory (Scott Chubb, "Semi-Classical Conduction of Charged and Neutral Particles in Finite Lattices," 2004 March Meeting."), for the idea that occupation of IBS's can occur and that this can lead to nuclear reactions.

  11. Effect of electron-electron interaction on thermal conductivity of disordered systems

    SciTech Connect

    Arfi, B. )

    1992-02-01

    Arfi presents a calculation of a correction to the thermal conductivity due to the inclusion of electron-electron interaction in a disordered metallic system. He finds that, to the first order in electron-electron interaction, the Wiedemann-Franz law is not satisfied.

  12. Electronic band gaps and transport in aperiodic graphene-based superlattices of Thue-Morse sequence

    NASA Astrophysics Data System (ADS)

    Wang, Ligang; Ma, Tianxing

    2014-03-01

    We investigate electronic band structure and transport properties in aperiodic graphene-based superlattices of Thue-Morse (TM) sequence. The robust properties of zero- k gap are demonstrated in both mono-layer and bi-layer graphene TM sequence. The Extra Dirac points may emerge at ky ≠ 0, and the electronic transport behaviors such as the conductance and the Fano factor are discussed in detail. Our results provide a flexible and effective way to control the transport properties in graphene-based superlattices. This work is supported by NSFCs (Nos. 11274275, 11104014 and 61078021), Research Fund for the Doctoral Program of Higher Education 20110003120007, SRF for ROCS (SEM), and the National Basic Research Program of China (No. 2011CBA00108, and 2012CB921602).

  13. Biased doped silicene as a way to tune electronic conduction

    NASA Astrophysics Data System (ADS)

    Pogorelov, Y. G.; Loktev, V. M.

    2016-01-01

    Restructuring of the electronic spectrum in a buckled silicene monolayer under some applied voltage between its two sublattices and in the presence of certain impurity atoms is considered. Special attention is given to formation of localized impurity levels within the band gap and to their collectivization at finite impurity concentration. It is shown that a qualitative restructuring of the quasiparticle spectrum within the initial band gap and then specific metal-insulator phase transitions are possible for such disordered system and can be effectively controlled by variation of the electric field bias at a given impurity perturbation potential and concentration. Since these effects are expected at low impurity concentrations but at not too low temperatures, they can be promising for practical applications in nanoelectronic devices.

  14. Quasi-ballistic Electronic Thermal Conduction in Metal Inverse Opals.

    PubMed

    Barako, Michael T; Sood, Aditya; Zhang, Chi; Wang, Junjie; Kodama, Takashi; Asheghi, Mehdi; Zheng, Xiaolin; Braun, Paul V; Goodson, Kenneth E

    2016-04-13

    Porous metals are used in interfacial transport applications that leverage the combination of electrical and/or thermal conductivity and the large available surface area. As nanomaterials push toward smaller pore sizes to increase the total surface area and reduce diffusion length scales, electron conduction within the metal scaffold becomes suppressed due to increased surface scattering. Here we observe the transition from diffusive to quasi-ballistic thermal conduction using metal inverse opals (IOs), which are metal films that contain a periodic arrangement of interconnected spherical pores. As the material dimensions are reduced from ∼230 nm to ∼23 nm, the thermal conductivity of copper IOs is reduced by more than 57% due to the increase in surface scattering. In contrast, nickel IOs exhibit diffusive-like conduction and have a constant thermal conductivity over this size regime. The quasi-ballistic nature of electron transport at these length scales is modeled considering the inverse opal geometry, surface scattering, and grain boundaries. Understanding the characteristics of electron conduction at the nanoscale is essential to minimizing the total resistance of porous metals for interfacial transport applications, such as the total electrical resistance of battery electrodes and the total thermal resistance of microscale heat exchangers. PMID:26986050

  15. Experimental Observation of Quantum Confinement in the Conduction Band of CdSe Quantum Dots

    SciTech Connect

    Lee, Jonathan R. I.; Meulenberg, Robert W.; Klepeis, John E.; Terminello, Louis J.; Buuren, Tony van; Hanif, Khalid M.; Mattoussi, Hedi

    2007-04-06

    X-ray absorption spectroscopy has been used to characterize the evolution in the conduction band (CB) density of states of CdSe quantum dots (QDs) as a function of particle size. We have unambiguously witnessed the CdSe QD CB minimum (CBM) shift to higher energy with decreasing particle size, consistent with quantum confinement effects, and have directly compared our results with recent theoretical calculations. At the smallest particle size, evidence for a pinning of the CBM is presented. Our observations can be explained by considering a size-dependent change in the angular-momentum-resolved states at the CBM.

  16. Electron conductivity in warm and hot dense matter

    NASA Astrophysics Data System (ADS)

    Starrett, Charles; Charest, Marc; Feinblum, David; Burrill, Daniel

    2015-11-01

    The electronic conductivity of warm and hot dense matter is investigated by combining the Ziman-Evans approach with the recently developed pseudo-atom molecular dynamics (PAMD) method. PAMD gives an accurate description of the electronic and ionic structure of the plasma. The Ziman-Evans approach to conductivity, which takes the electronic and ionic structures as inputs, has been widely used but with numerous different assumptions on these inputs. Here we present a systematic study of these assumptions by comparing results to gold-standard QMD results that are thought to be accurate but are very expensive to produce. The study reveals that some assumptions yield very inaccurate results and should not be used, while others give consistently reasonable results. Finally, we show that the Thomas-Fermi version of PAMD can also be used to give accurate conductivities very rapidly, taking a few minutes per point on a single processor.

  17. Solvent dipole modulation of conduction band edge shift and charge recombination in robust dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Hao, Feng; Jiao, Xingjian; Li, Jianbao; Lin, Hong

    2012-12-01

    Molecular modification is certified as a powerful strategy to adjust the energy alignment and electron transfer dynamics of dye-sensitized solar cells (DSCs). Herein, devices are assembled with three robust solvent (3-methoxypropionitrile, N,N-dimethylformamide and γ-butyrolactone) based electrolytes to elucidate the solvent dipole effects at the semiconductor-dye-electrolyte interface. Photovoltaic results demonstrate that open-circuit photovoltages of the devices vary linearly with the dipole moment of the solvents, along with an adverse dependence of the short-circuit photocurrent density under simulated irradiation. Impedance analysis reveals an apparent dipole moment-modulated conduction band edge shift of the nanocrystalline TiO2 electrodes with respect to the redox potential of the electrolyte. Furthermore, the adverse shifts of the short-circuit photocurrent are explained by a dipole dependence of the driving force for electron injection and the interfacial charge recombination, together with a notably changed charge collection efficiency. Therefore, this study draws attention to the feasibility of tuning the electron transfer dynamics and energy alignment in photoelectrochemical devices by judiciously selecting the electrolyte solvents for further efficiency improvement, especially for those alternative organic sensitizers or quantum dots with inadequate electron injection driven forces.

  18. Conduction-electron spin resonance in two-dimensional structures

    NASA Astrophysics Data System (ADS)

    Edelstein, Victor M.

    2016-09-01

    The influence of the conduction-electron spin magnetization density, induced in a two-dimensional electron layer by a microwave electromagnetic field, on the reflection and transmission of the field is considered. Because of the induced magnetization and electric current, both the electric and magnetic components of the field should have jumps on the layer. A way to match the waves on two sides of the layer, valid when the quasi-two-dimensional electron gas is in the one-mode state, is proposed. By following this way, the amplitudes of transmitted and reflected waves as well as the absorption coefficient are evaluated.

  19. g -factors of conduction electrons and holes in B i2S e3 three-dimensional topological insulator

    NASA Astrophysics Data System (ADS)

    Wolos, A.; Szyszko, S.; Drabinska, A.; Kaminska, M.; Strzelecka, S. G.; Hruban, A.; Materna, A.; Piersa, M.; Borysiuk, J.; Sobczak, K.; Konczykowski, M.

    2016-04-01

    Bulk-related conduction electron spin resonance and conduction hole spin resonance were investigated in B i2S e3 , a three-dimensional topological insulator. Electrons in the conduction band and holes in the valence band both have spin ½. The effective g -factors for conduction electrons are equal to 27.3 ± 0.15 for magnetic field parallel to the c axis and 19.48 ± 0.07 for magnetic field perpendicular to the c axis, whereas for conduction holes 29.90 ± 0.09 for magnetic field parallel and 18.96 ± 0.04 for magnetic field perpendicular to the c axis, respectively. Nonparabolicity effects were not observed in the investigated low carrier concentration range, below 8 ×1017c m-3 . Large g -factors, higher by an order of magnitude than the free electron value, are due to strong spin-orbit interactions in B i2S e3 . The striking similarity of the spin resonances due to conduction electrons and holes confirms the peculiar symmetry between the conduction and valence bands of B i2S e3 , both having similar effective masses and spin character.

  20. Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO{sub 2}

    SciTech Connect

    Green, R. J. St Onge, D. J.; Moewes, A.; Zatsepin, D. A.; Kurmaev, E. Z.; Gavrilov, N. V.; Zatsepin, A. F.

    2014-03-14

    Cobalt and manganese ions are implanted into SiO{sub 2} over a wide range of concentrations. For low concentrations, the Co atoms occupy interstitial locations, coordinated with oxygen, while metallic Co clusters form at higher implantation concentrations. For all concentrations studied here, Mn ions remain in interstitial locations and do not cluster. Using resonant x-ray emission spectroscopy and Anderson impurity model calculations, we determine the strength of the covalent interaction between the interstitial ions and the SiO{sub 2} valence band, finding it comparable to Mn and Co monoxides. Further, we find an increasing reduction in the SiO{sub 2} electronic band gap for increasing implantation concentration, due primarily to the introduction of Mn- and Co-derived conduction band states. We also observe a strong increase in a band of x-ray stimulated luminescence at 2.75 eV after implantation, attributed to oxygen deficient centers formed during implantation.

  1. Role of electron-electron collisions in high field conduction in Nitrides

    NASA Astrophysics Data System (ADS)

    Paranjape, V. V.

    2015-06-01

    Role of electron-electron collisions in semiconductors is to exchange energy and momentum among the conduction electrons and to express the electron distribution in terms of electron temperature and electron drift velocity. This role takes particular importance when the external electric field produces large disparities in the energy distribution of electrons. Such disparities are introduced in polar semiconductors such as Nitrides. Electron-electron collisions give rise to heating or cooling of the electron gas. Heating is widely accepted but cooling in steady state and transient currents is new as is shown in this paper. It is also shown that the overshooting of electron velocity in transient currents in Nitrides is related to the electron cooling.

  2. Inventory Control. Easily Made Electronic Device for Conductivity Experiments.

    ERIC Educational Resources Information Center

    Gadek, Frank J.

    1987-01-01

    Describes how to construct an electronic device to be used in conductivity experiments using a 35 millimeter film canister, nine volt battery replacement snaps, a 200-300 ohm resistor, and a light-emitting diode. Provides a diagram and photographs of the device. (TW)

  3. Electronically conductive ceramics for high temperature oxidizing environments

    DOEpatents

    Kucera, Gene H.; Smith, James L.; Sim, James W.

    1986-01-01

    A high temperature, ceramic composition having electronic conductivity as measured by resistivity below about 500 ohm-cm, chemical stability particularly with respect to cathode conditions in a molten carbonate fuel cell, and composed of an alkali metal, transition metal oxide containing a dopant metal in the crystalline structure to replace a portion of the alkali metal or transition metal.

  4. Electronically conductive ceramics for high temperature oxidizing environments

    DOEpatents

    Kucera, G.H.; Smith, J.L.; Sim, J.W.

    1983-11-10

    This invention pertains to a high temperature, ceramic composition having electronic conductivity as measured by resistivity below about 500 ohm-cm, chemical stability particularly with respect to cathode conditions in a molten carbonate fuel cell, and composed of an alkali metal, transition metal oxide containing a dopant metal in the crystalline structure to replace a portion of the alkali metal or transition metal.

  5. Two-temperature radiative shocks with electron thermal conduction

    NASA Technical Reports Server (NTRS)

    Borkowski, Kazimierz J.; Shull, J. Michael; Mckee, Christopher F.

    1989-01-01

    The influence of electron thermal conduction on radiative shock structure is studied for both one- and two-temperature plasmas. The dimensionless ratio of the conductive length to the cooling length determines whether or not conduction is important, and shock jump conditions with conduction are established for a collisionless shock front. Approximate solutions are obtained, with the assumptions that the ionization state of the gas is constant and the cooling rate is a function of temperature alone. In the absence of magnetic fields, these solutions indicate that conduction noticeably influences normal-abundance interstellar shocks with velocities 50-100 km/s and dramatically affects metal-dominated shocks over a wide range of shock velocities.

  6. Band Alignment, Built-In Potential, and the Absence of Conductivity at the LaCrO3/SrTiO3(001) Heterojunction

    SciTech Connect

    Chambers, Scott A.; Qiao, Liang; Droubay, Timothy C.; Kaspar, Tiffany C.; Arey, Bruce W.; Sushko, P. V.

    2011-11-07

    MBE-grown LaCrO3/SrTiO3(001) exhibits a staggered band alignment with valence and conduction band offsets of 2.45(6) and 0.8(1) eV, respectively. Core-level XPS peak broadening is consistent with no band bending in the SrTiO3 and a gradient of ~200 meV per unit cell in the LaCrO3. This gradient is adequate to trigger an electronic reconstruction, and the attendant transfer of charge from film to substrate, to alleviate the polarity mismatch. However, the interface is insulating because charge redistribution within the CrO2 layers occurs rather than electronic reconstruction to screen the field.

  7. Indium oxide—a transparent, wide-band gap semiconductor for (opto)electronic applications

    NASA Astrophysics Data System (ADS)

    Bierwagen, Oliver

    2015-02-01

    The present review takes a semiconductor physics perspective to summarize the state-of-the art of In2O3 in relation to applications. After discussing conventional and novel applications, the crystal structure, synthesis of single-crystalline material, band-structure and optical transparency are briefly introduced before focussing on the charge carrier transport properties. The issues of unintentional n-type conductivity and its likely causes, the surface electron accumulation, and the lack of p-type conductivity will be presented. Intentional doping will be demonstrated to control the electron concentration and resistivity over a wide range, but is also subject to compensation. The control of the surface accumulation in relation to Schottky and ohmic contacts will be demonstrated. In the context of scattering mechanisms, the electron mobility and its limits will be discussed. Finally, the Seebeck coefficient and its significance will be shown, and ferromagnetic doping of In2O3 will be critically discussed. With this overview most if not all ingredients for the use of In2O3 as semiconductor material in novel or improved conventional devices will be given.

  8. Effect of band gap energy on the electrical conductivity in doped ZnO thin film

    NASA Astrophysics Data System (ADS)

    Benramache, Said; Belahssen, Okba; Ben Temam, Hachemi

    2014-07-01

    The transparent conductive pure and doped zinc oxide thin films with aluminum, cobalt and indium were deposited by ultrasonic spray technique on glass substrate at 350 °C. This paper is to present a new approach to the description of correlation between electrical conductivity and optical gap energy with dopants' concentration of Al, Co and In. The correlation between the electrical and optical properties with doping level suggests that the electrical conductivity of the films is predominantly estimated by the band gap energy and the concentrations of Al, Co and In. The measurement in the electrical conductivity of doped films with correlation is equal to the experimental value, the error of this correlation is smaller than 13%. The minimum error value was estimated in the cobalt-doped ZnO thin films. This result indicates that such Co-doped ZnO thin films are chemically purer and have far fewer defects and less disorder owing to an almost complete chemical decomposition.

  9. Indirect Band Gap Emission by Hot Electron Injection in Metal/MoS₂ and Metal/WSe₂ Heterojunctions.

    PubMed

    Li, Zhen; Ezhilarasu, Goutham; Chatzakis, Ioannis; Dhall, Rohan; Chen, Chun-Chung; Cronin, Stephen B

    2015-06-10

    Transition metal dichalcogenides (TMDCs), such as MoS2 and WSe2, are free of dangling bonds and therefore make more "ideal" Schottky junctions than bulk semiconductors, which produce Fermi energy pinning and recombination centers at the interface with bulk metals, inhibiting charge transfer. Here, we observe a more than 10× enhancement in the indirect band gap photoluminescence of transition metal dichalcogenides (TMDCs) deposited on various metals (e.g., Cu, Au, Ag), while the direct band gap emission remains unchanged. We believe the main mechanism of light emission arises from photoexcited hot electrons in the metal that are injected into the conduction band of MoS2 and WSe2 and subsequently recombine radiatively with minority holes in the TMDC. Since the conduction band at the K-point is 0.5 eV higher than at the Σ-point, a lower Schottky barrier exists for the Σ-point band, making electron injection more favorable. Also, the Σ band consists of the sulfur pz orbital, which overlaps more significantly with the electron wave functions in the metal. This enhancement in the indirect emission only occurs for thick flakes of MoS2 and WSe2 (≥100 nm) and is completely absent in monolayer and few-layer (∼10 nm) flakes. Here, the flake thickness must exceed the depletion width of the Schottky junction, in order for efficient radiative recombination to occur in the TMDC. The intensity of this indirect peak decreases at low temperatures, which is consistent with the hot electron injection model. PMID:25993397

  10. Conductivity type inversion in wide band gap antiferromagnetic FeTiO3

    NASA Astrophysics Data System (ADS)

    Chikoidze, E.; Tchelidze, T.; Popova, E.; Maso, P.; Ponjavidze, N.; Keller, N.; Dumont, Y.

    2013-03-01

    By quasi-chemical reaction method for FeTiO3 material in oxygen atmosphere, electron and hole concentrations for broad range of oxygen partial pressure have been calculated. Oxygen pressures, at which electrical and hole conductivity can be achieved, were estimated. Thin layers of FeTiO3 have been grown on transparent Al2O3 (0001) substrates by pulsed laser deposition technique at different oxygen partial pressures. Structural, optical, and electrical properties have been studied for these samples. By special post-annealing treatment, the conductivity type inversion from p to n has been achieved as predicted by our thermodynamic analysis.

  11. Micro-metric electronic patterning of a topological band structure using a photon beam.

    PubMed

    Frantzeskakis, E; De Jong, N; Zwartsenberg, B; Huang, Y K; Bay, T V; Pronk, P; Van Heumen, E; Wu, D; Pan, Y; Radovic, M; Plumb, N C; Xu, N; Shi, M; De Visser, A; Golden, M S

    2015-01-01

    In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi(2-x)Sb(x)Te(3-y)Se(y) with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulating character. However, despite its insulating bulk in transport experiments, the surface region of Bi(2-x)Sb(x)Te(3-y)Se(y) crystals cleaved in ultrahigh vacuum also exhibits occupied states originating from the bulk conduction band. This is due to adsorbate-induced downward band-bending, a phenomenon known from other Bi-based 3D TIs. Here we show, using angle-resolved photoemission, how an EUV light beam of moderate flux can be used to exclude these topologically trivial states from the Fermi level of Bi1.46Sb0.54Te1.7Se1.3 single crystals, thereby re-establishing the purely topological character of the low lying electronic states of the system. We furthermore prove that this process is highly local in nature in this bulk-insulating TI, and are thus able to imprint structures in the spatial energy landscape at the surface. We illustrate this by 'writing' micron-sized letters in the Dirac point energy of the system. PMID:26543011

  12. Micro-metric electronic patterning of a topological band structure using a photon beam

    PubMed Central

    Frantzeskakis, E.; De Jong, N.; Zwartsenberg, B.; Huang, Y. K.; Bay, T. V.; Pronk, P.; Van Heumen, E.; Wu, D.; Pan, Y.; Radovic, M.; Plumb, N. C.; Xu, N.; Shi, M.; De Visser, A.; Golden, M. S.

    2015-01-01

    In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi2−xSbxTe3−ySey with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulating character. However, despite its insulating bulk in transport experiments, the surface region of Bi2−xSbxTe3−ySey crystals cleaved in ultrahigh vacuum also exhibits occupied states originating from the bulk conduction band. This is due to adsorbate-induced downward band-bending, a phenomenon known from other Bi-based 3D TIs. Here we show, using angle-resolved photoemission, how an EUV light beam of moderate flux can be used to exclude these topologically trivial states from the Fermi level of Bi1.46Sb0.54Te1.7Se1.3 single crystals, thereby re-establishing the purely topological character of the low lying electronic states of the system. We furthermore prove that this process is highly local in nature in this bulk-insulating TI, and are thus able to imprint structures in the spatial energy landscape at the surface. We illustrate this by ‘writing’ micron-sized letters in the Dirac point energy of the system. PMID:26543011

  13. Micro-metric electronic patterning of a topological band structure using a photon beam

    NASA Astrophysics Data System (ADS)

    Frantzeskakis, E.; de Jong, N.; Zwartsenberg, B.; Huang, Y. K.; Bay, T. V.; Pronk, P.; van Heumen, E.; Wu, D.; Pan, Y.; Radovic, M.; Plumb, N. C.; Xu, N.; Shi, M.; de Visser, A.; Golden, M. S.

    2015-11-01

    In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi2-xSbxTe3-ySey with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulating character. However, despite its insulating bulk in transport experiments, the surface region of Bi2-xSbxTe3-ySey crystals cleaved in ultrahigh vacuum also exhibits occupied states originating from the bulk conduction band. This is due to adsorbate-induced downward band-bending, a phenomenon known from other Bi-based 3D TIs. Here we show, using angle-resolved photoemission, how an EUV light beam of moderate flux can be used to exclude these topologically trivial states from the Fermi level of Bi1.46Sb0.54Te1.7Se1.3 single crystals, thereby re-establishing the purely topological character of the low lying electronic states of the system. We furthermore prove that this process is highly local in nature in this bulk-insulating TI, and are thus able to imprint structures in the spatial energy landscape at the surface. We illustrate this by ‘writing’ micron-sized letters in the Dirac point energy of the system.

  14. How to suppress the backscattering of conduction electrons?

    NASA Astrophysics Data System (ADS)

    Kibis, O. V.

    2014-09-01

    It is shown theoretically that the strong coupling of electrons to a high-frequency electromagnetic field results in the nulling of electron backscattering within the Born approximation. The conditions of the effect depend only on field parameters and do not depend on the concrete form of the scattering potential. As a consequence, this phenomenon is of universal physical nature and can take place in various conducting systems. Since the suppression of electron backscattering results in decreasing electrical resistance, the solved quantum-mechanical problem opens a new way to control electronic transport properties of conductors by a laser-generated field. Particularly, the elaborated theory is applicable to nanostructures exposed to a strong monochromatic electromagnetic wave.

  15. Visualizing One-Dimensional Electronic States and their Scattering in Semi-conducting Nanowires

    NASA Astrophysics Data System (ADS)

    Beidenkopf, Haim; Reiner, Jonathan; Norris, Andrew; Nayak, Abhay Kumar; Avraham, Nurit; Shtrikman, Hadas

    One-dimensional electronic systems constitute a fascinating playground for the emergence of exotic electronic effects and phases, within and beyond the Tomonaga-Luttinger liquid paradigm. More recently topological superconductivity and Majorana modes were added to that long list of phenomena. We report scanning tunneling microscopy and spectroscopy measurements conducted on pristine, epitaxialy grown InAs nanowires. We resolve the 1D electronic band structure manifested both via Van-Hove singularities in the local density-of-states, as well as by the quasi-particle interference patterns, induced by scattering from surface impurities. By studying the scattering of the one-dimensional electronic states off various scatterers, including crystallographic defects and the nanowire end, we identify new one-dimensional relaxation regimes and yet unexplored effects of interactions. Some of these may bear implications on the topological superconducting state and Majorana modes therein. The authors acknowledge support from the Israeli Science Foundation (ISF).

  16. Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2

    NASA Astrophysics Data System (ADS)

    Waterhouse, G. I. N.; Wahab, A. K.; Al-Oufi, M.; Jovic, V.; Anjum, D. H.; Sun-Waterhouse, D.; Llorca, J.; Idriss, H.

    2013-10-01

    Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability.

  17. Exploring the electronic band structure of individual carbon nanotubes under 60 T

    NASA Astrophysics Data System (ADS)

    Nanot, Sébastien; Escoffier, Walter; Lassagne, Benjamin; Broto, Jean-Marc; Raquet, Bertrand

    2009-05-01

    Nano-sciences, and in particular nano-physics, constitute a fascinating world of investigations where the experimental challenges are to synthesize, to address (for instance optically or electrically) to explore and promote the remarkable physical properties of new nano-materials. Somehow, one of the most promising realization of nano-sciences lies in carbon-based nano-materials with sp covalent bonds. In particular, carbon nanotubes, graphene and more recently ultra-narrow graphene nano-ribbons are envisioned as elementary bricks of the future of nano-electronics. However, prior to such an achievement, the first steps consist in understanding their fundamental electronic properties when they constitute the drain-source channel of a gated device or inter-connexion elements. In this article, we present the richness of challenging experiments combining single-object measurements with an extreme magnetic environment. We demonstrate that an applied magnetic field ( B), along with a control of the electrostatic doping, drastically modifies the electronic band structure of a carbon nanotube based transistor. Several examples will be addressed in this presentation. When B is applied parallel to the tube axis, a quantum flux threading the tube induces a giant Aharonov-Bohm conductance modulation mediated by Schottky barriers whose profile is magnetic field dependent. In the perpendicular configuration, the applied magnetic field breaks the revolution symmetry along the circumference and non-conventional Landau states develop in the high field regime. By playing with a carbon nanotube based electronic Fabry-Perot resonator, the field dependence of the resonant states of the cavity reveals the onset of the first Landau state at zero energy. These experiments enlighten the outstanding efficiency of magneto-conductance experiments to probe the electronic properties of carbon based nano-materials. To cite this article: S. Nanot et al., C. R. Physique 10 (2009).

  18. Peierls distortion and electronic bands in phosphorus allotropes

    NASA Astrophysics Data System (ADS)

    Falkovsky, L. A.

    2016-01-01

    A small difference between the rhombohedral phosphorus lattice (A-7 phase) and the simple cubic phase, as well as between phosphorene and the cubic structure, is used in order to construct their quasiparticle band dispersion. We exploit the Peierls idea of the Brillouin zone doubling/folding, which has been previously employed in consideration of semimetals of the V period and IV-VI semiconductors. In a common framework, individual properties of phosphorus allotropes are revealed.

  19. Band offsets of n-type electron-selective contacts on cuprous oxide (Cu2O) for photovoltaics

    NASA Astrophysics Data System (ADS)

    Brandt, Riley E.; Young, Matthew; Park, Helen Hejin; Dameron, Arrelaine; Chua, Danny; Lee, Yun Seog; Teeter, Glenn; Gordon, Roy G.; Buonassisi, Tonio

    2014-12-01

    The development of cuprous oxide (Cu2O) photovoltaics (PVs) is limited by low device open-circuit voltages. A strong contributing factor to this underperformance is the conduction-band offset between Cu2O and its n-type heterojunction partner or electron-selective contact. In the present work, a broad range of possible n-type materials is surveyed, including ZnO, ZnS, Zn(O,S), (Mg,Zn)O, TiO2, CdS, and Ga2O3. Band offsets are determined through X-ray photoelectron spectroscopy and optical bandgap measurements. A majority of these materials is identified as having a negative conduction-band offset with respect to Cu2O; the detrimental impact of this on open-circuit voltage (VOC) is evaluated through 1-D device simulation. These results suggest that doping density of the n-type material is important as well, and that a poorly optimized heterojunction can easily mask changes in bulk minority carrier lifetime. Promising heterojunction candidates identified here include Zn(O,S) with [S]/[Zn] ratios >70%, and Ga2O3, which both demonstrate slightly positive conduction-band offsets and high VOC potential. This experimental protocol and modeling may be generalized to evaluate the efficiency potential of candidate heterojunction partners for other PV absorbers, and the materials identified herein may be promising for other absorbers with low electron affinities.

  20. Shear-deformation-potential constant of the conduction-band minima of Si: Experimental determination by the deep-level capacitance transient method

    NASA Astrophysics Data System (ADS)

    Li, Ming-Fu; Zhao, Xue-Shu; Gu, Zong-Quan; Chen, Jian-Xin; Li, Yan-Jin; Wang, Jian-Qing

    1991-06-01

    The shear-deformation-potential constant Ξu of the conduction-band minima of Si has been measured by a method which we called deep-level capacitance transient under uniaxial stress. The uniaxial-stress (F) dependence of the electron emission rate en from deep levels to the split conduction-band minima of Si has been analyzed. Theoretical curves are in good agreement with experimental data for the S0 and S+ deep levels in Si. The values of Ξu obtained by the method are 11.1+/-0.3 eV at 148.9 K and 11.3+/-0.3 eV at 223.6 K. The analysis and the Ξu values obtained are also valuable for symmetry determination of deep electron traps in Si.

  1. Electronic structures, elastic properties, and minimum thermal conductivities of cermet M3AlN

    NASA Astrophysics Data System (ADS)

    Wang, Jin; Chen, ZhiQian; Li, ChunMei; Li, Feng; Nie, ChaoYin

    2014-08-01

    The electronic structures and elastic anisotropies of cubic Ti3AlN, Zr3AlN, and Hf3AlN are investigated by pseudopotential plane-wave method based on density functional theory. At the Fermi level, the electronic structures of these compounds are successive with no energy gap between conduct and valence bands, and exhibit metallicity in ground states. In valence band of each partial density of states, the different orbital electrons indicate interaction of corresponding atoms. In addition, the anisotropy of Hf3AlN is found to be significantly different from that of Ti3AlN and Zr3AlN, which involve the differences in the bonding strength. It is notable that Hf3AlN is a desired thermal barrier material with the lowest thermal conductivity at high temperature among the three compounds. Young's moduli of anti-perovskite Ti3AlN, Zr3AlN, and Hf3AlN in full space. Electron density differences on crystal planes (1 0 0), (2 0 0), and (1 1 0) of anti-perovskite Zr3AlN. ="fx1"/>

  2. Waveguide Characterization of S-Band Microwave Mantle Cloaks for Dielectric and Conducting Objects

    PubMed Central

    Vitiello, Antonino; Moccia, Massimo; Papari, Gian Paolo; D’Alterio, Giuliana; Vitiello, Roberto; Galdi, Vincenzo; Andreone, Antonello

    2016-01-01

    We present the experimental characterization of mantle cloaks designed so as to minimize the electromagnetic scattering of moderately-sized dielectric and conducting cylinders at S-band microwave frequencies. Our experimental setup is based on a parallel-plate waveguide system, which emulates a two-dimensional plane-wave scattering scenario, and allows the collection of near-field maps as well as more quantitative assessments in terms of global scattering observables (e.g., total scattering width). Our results, in fairly good agreement with full-wave numerical simulations, provide a further illustration of the mantle- cloak mechanism, including its frequency-sensitivity, and confirm its effectiveness both in restoring the near-field impinging wavefront around the scatterer, and in significantly reducing the overall scattering. PMID:26803985

  3. Experimental Observation of Quantum Confinement in the Conduction Band of CdSe Quantum Dots

    SciTech Connect

    Lee, J I; Meulenberg, R W; Hanif, K M; Mattoussi, H; Klepeis, J E; Terminello, L J; van Buuren, T

    2006-12-15

    Recent theoretical descriptions as to the magnitude of effect that quantum confinement has on he conduction band (CB) of CdSe quantum dots (QD) have been conflicting. In this manuscript, we experimentally identify quantum confinement effects in the CB of CdSe QDs for the first time. Using X-ray absorption spectroscopy, we have unambiguously witnessed the CB minimum shift to higher energy with decreasing particle size and have been able to compare these results to recent theories. Our experiments have been able to identify which theories correctly describe the CB states in CdSe QDs. In particular, our experiments suggest that multiple theories describe the shifts in the CB of CdSe QDs and are not mutually exclusive.

  4. Waveguide Characterization of S-Band Microwave Mantle Cloaks for Dielectric and Conducting Objects

    NASA Astrophysics Data System (ADS)

    Vitiello, Antonino; Moccia, Massimo; Papari, Gian Paolo; D'Alterio, Giuliana; Vitiello, Roberto; Galdi, Vincenzo; Andreone, Antonello

    2016-01-01

    We present the experimental characterization of mantle cloaks designed so as to minimize the electromagnetic scattering of moderately-sized dielectric and conducting cylinders at S-band microwave frequencies. Our experimental setup is based on a parallel-plate waveguide system, which emulates a two-dimensional plane-wave scattering scenario, and allows the collection of near-field maps as well as more quantitative assessments in terms of global scattering observables (e.g., total scattering width). Our results, in fairly good agreement with full-wave numerical simulations, provide a further illustration of the mantle- cloak mechanism, including its frequency-sensitivity, and confirm its effectiveness both in restoring the near-field impinging wavefront around the scatterer, and in significantly reducing the overall scattering.

  5. Shear-deformation-potential constant of the conduction-band minima of Si: Pseudopotential calculations

    NASA Astrophysics Data System (ADS)

    Li, Ming-Fu; Gu, Zong-Quan; Wang, Jian-Qing

    1990-09-01

    We have calculated the value of the shear-deformation-potential constant Ξu of the conduction-band minima of Si and its temperature coefficient dΞu/dT. The value of Ξu is 9.0 eV for an ab initio pseudopotential calculation and 10.8 eV by the empirical-pseudopotential method (EPM), in good agreement with our experiment. The EPM calculations of the temperature dependence of Ξu yield the values of (dΞu/dT)||DW=-0.04 meV/K due to the Debye-Waller contribution, and (dΞu/dT)||TE=-0.04 meV/K for thermal expansion. We suspect and suggest that the existing experimental value of dΞu/dT~=+3 meV/K is unreliable due to large experimental uncertainty.

  6. Development of 256 x 256 Element Impurity Band Conduction Infrared Detector Arrays for Astronomy

    NASA Technical Reports Server (NTRS)

    Domingo, George

    1997-01-01

    This report describes the work performed on a one and a half year advance technology program to develop Impurity Band Conduction (IBC) detectors with very low dark current, high quantum efficiency, and with good repeatable processes. The program fabricated several epitaxial growths of Si:As detecting layers from 15 to 35 microns thick and analyzed the performance versus the thickness and the Arsenic concentration of these epitaxial layers. Some of the epitaxial runs did not yield because of excessive residual impurities. The thicker epitaxial layers and the ones with higher Arsenic concentration resulted in good detectors with low dark currents and good quantum efficiency. The program hybridized six detector die from the best detector wafers to a low noise, 256 x 256 readout array and delivered the hybrids to NASA Ames for a more detailed study of the performance of the detectors.

  7. Rearrangement of 1D conducting nanomaterials towards highly electrically conducting nanocomposite fibres for electronic textiles.

    PubMed

    Han, Joong Tark; Choi, Sua; Jang, Jeong In; Seol, Seung Kwon; Woo, Jong Seok; Jeong, Hee Jin; Jeong, Seung Yol; Baeg, Kang-Jun; Lee, Geon-Woong

    2015-01-01

    Nanocarbon-based conducting fibres have been produced using solution- or dry-spinning techniques. Highly conductive polymer-composite fibres containing large amounts of conducting nanomaterials have not been produced without dispersants, however, because of the severe aggregation of conducting materials in high-concentration colloidal solutions. Here we show that highly conductive (electrical conductivity ~1.5 × 10(5) S m(-1)) polymer-composite fibres containing carbon nanotubes and silver nanowires can be fabricated via a conventional solution-spinning process without any other treatment. Spinning dopes were fabricated by a simple mixing of a polyvinyl alcohol solution in dimethylsulfoxide with a paste of long multi-walled carbon nanotubes dispersed in organic solvents, assisted by quadruple hydrogen-bonding networks and an aqueous silver nanowire dispersion. The high electrical conductivity of the fibre was achieved by rearrangement of silver nanowires towards the fibre skin during coagulation because of the selective favourable interaction between the silver nanowires and coagulation solvents. The prepared conducting fibres provide applications in electronic textiles such as a textile interconnector of light emitting diodes, flexible textile heaters, and touch gloves for capacitive touch sensors. PMID:25792333

  8. Rearrangement of 1D Conducting Nanomaterials towards Highly Electrically Conducting Nanocomposite Fibres for Electronic Textiles

    PubMed Central

    Han, Joong Tark; Choi, Sua; Jang, Jeong In; Seol, Seung Kwon; Woo, Jong Seok; Jeong, Hee Jin; Jeong, Seung Yol; Baeg, Kang-Jun; Lee, Geon-Woong

    2015-01-01

    Nanocarbon-based conducting fibres have been produced using solution- or dry-spinning techniques. Highly conductive polymer-composite fibres containing large amounts of conducting nanomaterials have not been produced without dispersants, however, because of the severe aggregation of conducting materials in high-concentration colloidal solutions. Here we show that highly conductive (electrical conductivity ~1.5 × 105 S m−1) polymer-composite fibres containing carbon nanotubes and silver nanowires can be fabricated via a conventional solution-spinning process without any other treatment. Spinning dopes were fabricated by a simple mixing of a polyvinyl alcohol solution in dimethylsulfoxide with a paste of long multi-walled carbon nanotubes dispersed in organic solvents, assisted by quadruple hydrogen-bonding networks and an aqueous silver nanowire dispersion. The high electrical conductivity of the fibre was achieved by rearrangement of silver nanowires towards the fibre skin during coagulation because of the selective favourable interaction between the silver nanowires and coagulation solvents. The prepared conducting fibres provide applications in electronic textiles such as a textile interconnector of light emitting diodes, flexible textile heaters, and touch gloves for capacitive touch sensors. PMID:25792333

  9. Rearrangement of 1D Conducting Nanomaterials towards Highly Electrically Conducting Nanocomposite Fibres for Electronic Textiles

    NASA Astrophysics Data System (ADS)

    Han, Joong Tark; Choi, Sua; Jang, Jeong In; Seol, Seung Kwon; Woo, Jong Seok; Jeong, Hee Jin; Jeong, Seung Yol; Baeg, Kang-Jun; Lee, Geon-Woong

    2015-03-01

    Nanocarbon-based conducting fibres have been produced using solution- or dry-spinning techniques. Highly conductive polymer-composite fibres containing large amounts of conducting nanomaterials have not been produced without dispersants, however, because of the severe aggregation of conducting materials in high-concentration colloidal solutions. Here we show that highly conductive (electrical conductivity ~1.5 × 105 S m-1) polymer-composite fibres containing carbon nanotubes and silver nanowires can be fabricated via a conventional solution-spinning process without any other treatment. Spinning dopes were fabricated by a simple mixing of a polyvinyl alcohol solution in dimethylsulfoxide with a paste of long multi-walled carbon nanotubes dispersed in organic solvents, assisted by quadruple hydrogen-bonding networks and an aqueous silver nanowire dispersion. The high electrical conductivity of the fibre was achieved by rearrangement of silver nanowires towards the fibre skin during coagulation because of the selective favourable interaction between the silver nanowires and coagulation solvents. The prepared conducting fibres provide applications in electronic textiles such as a textile interconnector of light emitting diodes, flexible textile heaters, and touch gloves for capacitive touch sensors.

  10. Mixed ionic and electronic conducting ceramic membranes for hydrocarbon processing

    DOEpatents

    Van Calcar, Pamela; Mackay, Richard; Sammells, Anthony F.

    2002-01-01

    The invention relates to mixed phase materials for the preparation of catalytic membranes which exhibit ionic and electronic conduction and which exhibit improved mechanical strength compared to single phase ionic and electronic conducting materials. The mixed phase materials are useful for forming gas impermeable membranes either as dense ceramic membranes or as dense thin films coated onto porous substrates. The membranes and materials of this invention are useful in catalytic membrane reactors in a variety of applications including synthesis gas production. One or more crystalline second phases are present in the mixed phase material at a level sufficient to enhance the mechanical strength of the mixture to provide membranes for practical application in CMRs.

  11. Effects of electron-beam irradiation on conducting polypyrrole nanowires

    SciTech Connect

    Hong, Young Ki; Park, Dong Hyuk; Park, Se Hee; Park, Soung Kyu; Joo, Jinsoo

    2009-02-02

    Conducting polypyrrole (PPy) nanowires (NWs) were irradiated by a relatively high energy (300 keV-2 MeV) electron-beam (e-beam) generated from a linear electron accelerator in an atmospheric environment. From the current-voltage characteristics of pristine and 2 MeV e-beam irradiated PPy NWs, we observed a dramatic variation in resistance from 8.0x10{sup 2} to 1.45x10{sup 8} {omega}, that is, we observed a transition from conducting states to nonconducting states through the e-beam irradiation. To discern conformational changes and the doping states of PPy NWs through the e-beam irradiation, we measured Raman and ultraviolet-visible absorption spectra for the PPy NWs. As the energy of the e-beam irradiation increased, we observed that the PPy NWs were changed from doping states to dedoping states with conformational modification including the variation in {pi}-conjugation length.

  12. Molecular Models for Conductance in Junctions and Electrochemical Electron Transfer

    NASA Astrophysics Data System (ADS)

    Mazinani, Shobeir Khezr Seddigh

    This thesis develops molecular models for electron transport in molecular junctions and intra-molecular electron transfer. The goal is to identify molecular descriptors that afford a substantial simplification of these electronic processes. First, the connection between static molecular polarizability and the molecular conductance is examined. A correlation emerges whereby the measured conductance of a tunneling junction decreases as a function of the calculated molecular polarizability for several systems, a result consistent with the idea of a molecule as a polarizable dielectric. A model based on a macroscopic extension of the Clausius-Mossotti equation to the molecular domain and Simmon's tunneling model is developed to explain this correlation. Despite the simplicity of the theory, it paves the way for further experimental, conceptual and theoretical developments in the use of molecular descriptors to describe both conductance and electron transfer. Second, the conductance of several biologically relevant, weakly bonded, hydrogen-bonded systems is systematically investigated. While there is no correlation between hydrogen bond strength and conductance, the results indicate a relation between the conductance and atomic polarizability of the hydrogen bond acceptor atom. The relevance of these results to electron transfer in biological systems is discussed. Hydrogen production and oxidation using catalysts inspired by hydrogenases provides a more sustainable alternative to the use of precious metals. To understand electrochemical and spectroscopic properties of a collection of Fe and Ni mimics of hydrogenases, high-level density functional theory calculations are described. The results, based on a detailed analysis of the energies, charges and molecular orbitals of these metal complexes, indicate the importance of geometric constraints imposed by the ligand on molecular properties such as acidity and electrocatalytic activity. Based on model calculations of

  13. New secondary batteries utilizing electronically conductive polymer cathodes

    NASA Technical Reports Server (NTRS)

    Martin, Charles R.; White, Ralph E.

    1987-01-01

    The objectives are to optimize the transport rates in electronically conductive polypyrrole films by controlling the morphology of the film and to assess the utility of these films as cathodes in a lithium/polypyrrole secondary battery. During this research period, a better understanding was gained of the fundamental electrochemical switching processes within the polypyrrole film. Three publications were submitted based on the work completed.

  14. Millimeter scale electron conduction through exoelectrogenic mixed species biofilms.

    PubMed

    Li, Cheng; Lesnik, Keaton Larson; Fan, Yanzhen; Liu, Hong

    2016-08-01

    The functioning of many natural and engineered environments is dependent on long distance electron transfer mediated through electrical currents. These currents have been observed in exoelectrogenic biofilms and it has been proposed that microbial biofilms can mediate electron transfer via electrical currents on the centimeter scale. However, direct evidence to confirm this hypothesis has not been demonstrated and the longest known electrical transfer distance for single species exoelectrogenic biofilms is limited to 100 μm. In the present study, biofilms were developed on electrodes with electrically non-conductive gaps from 50 μm to 1 mm and the in situ conductance of biofilms was evaluated over time. Results demonstrated that the exoelectrogenic mixed species biofilms in the present study possess the ability to transfer electrons through electrical currents over a distance of up to 1 mm, 10 times further than previously observed. Results indicate the possibility of interspecies interactions playing an important role in the spatial development of exoelectrogenic biofilms, suggesting that these biological networks might remain conductive even at longer distance. These findings have significant implications in regards to future optimization of microbial electrochemical systems. PMID:27279626

  15. High frequency conductivity of hot electrons in carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Amekpewu, M.; Mensah, S. Y.; Musah, R.; Mensah, N. G.; Abukari, S. S.; Dompreh, K. A.

    2016-05-01

    High frequency conductivity of hot electrons in undoped single walled achiral Carbon Nanotubes (CNTs) under the influence of ac-dc driven fields was considered. We investigated semi-classically Boltzmann's transport equation with and without the presence of the hot electrons' source by deriving the current densities in CNTs. Plots of the normalized current density versus frequency of ac-field revealed an increase in both the minimum and maximum peaks of normalized current density at lower frequencies as a result of a strong injection of hot electrons. The applied ac-field plays a twofold role of suppressing the space-charge instability in CNTs and simultaneously pumping an energy for lower frequency generation and amplification of THz radiations. These have enormous promising applications in very different areas of science and technology.

  16. Ion-exchangeable, electronically conducting layered perovskite oxyfluorides.

    PubMed

    Kobayashi, Yoji; Tian, Mingliang; Eguchi, Miharu; Mallouk, Thomas E

    2009-07-22

    Cation-exchangeable d(0) layered perovskites are amenable to intercalation, exfoliation, and a variety of topochemical reactions, but they lack the interesting electronic and magnetic functionalities of mixed-valent perovskites. Conversely, electronically and magnetically interesting layered perovskites lack scope in terms of interlayer chemistry. To bridge this gap, the insulating, cation-exchangeable layered perovskites RbLaNb(2)O(7), KCa(2)Nb(3)O(10), and NaYTiO(4) were reacted with poly(tetrafluoroethylene) under inert atmosphere conditions to yield layer perovskites in which some of the oxygen is substituted by fluorine. In the fluorinated materials, the B-site cations are reduced to a mixed-valent state without introducing oxygen vacancies into the anion sublattice. The resulting electronically conducting solids can be exposed to air and water and even ion-exchanged in acid without oxidation of the B-site cations. Electronic transport measurements on the air-stable RbLaNb(2)O(6)F reveal room-temperature conductivity (2-7 x 10(2) ohms x cm) via a variable-range hopping mechanism, which is not substantially changed after aqueous proton exchange to H(1-x)Rb(x)LaNb(2)O(6)F (x approximately = 0.2). PMID:19548670

  17. Electron Exchange and Conduction in Nontronite from First-Principles

    SciTech Connect

    Alexandrov, Vitali Y.; Neumann, Anke; Scherer, Michelle; Rosso, Kevin M.

    2013-01-11

    Fe-bearing clay minerals serve as an important source and sink for electrons in redox reactions in various subsurface geochemical environments, and electron transfer (ET) properties of the Fe2+/Fe3+ redox couple play a decisive role in a variety of physicochemical processes involving clays. Here, we apply first-principles calculations using both periodic GGA+U planewave and Hartree-Fock molecular-cluster frameworks in conjuction with small polaron hopping approach and Marcus electron transfer theory to examine electron exchange mobilities in an Fe-rich smectite, taking nontronite as a case study. GGA+U calculations of the activation barrier for small-polaron migration provide rates of electron hopping that agree very well with values deduced from variable temperature Mössbauer data (M. V. Schaefer, et. al., Environ. Sci. Technol. 45, 540, (2011)), indicating a surprisingly fast electron mobility at room temperature. Based on molecular cluster calculations, we show that the state with tetrahedral Fe2+ ion in the nontronite lattice is about 0.9 eV higher than the one with octahedral Fe2+. Also, evaluation of the ET rates for the Fe2+/Fe3+ electron hopping in tetrahedral (TS) and octahedral sheets (OS), as well as across the sheets (TS–OS) shows that the dominant contribution to the bulk electronic conductivity should come from the ET within the OS. Deprotonation of structural OH groups mediating ET between the Fe ions in the OS is found to decrease the internal reorganization energy and to increase the magnitude of the electronic coupling matrix element, whereas protonation (to OH2 groups) has the opposite effect. Overall, our calculations suggest that the major factors affecting ET rates are the nature and structure of the nearest-neighbor local environment and the degree of covalency of the bonds between Fe and ligands mediating electron hops. The generally higher reorganization energy and weaker electronic coupling found in Fe-bearing clay minerals leads to

  18. Differential cross sections for electron impact excitation of the electronic bands of phenol

    SciTech Connect

    Neves, R. F. C.; Jones, D. B.; Lopes, M. C. A.; Nixon, K. L.; Silva, G. B. da; Duque, H. V.; Oliveira, E. M. de; Lima, M. A. P.; Costa, R. F. da; Varella, M. T. do N.; Bettega, M. H. F.; and others

    2015-03-14

    We report results from a joint theoretical and experimental investigation into electron scattering from the important organic species phenol (C{sub 6}H{sub 5}OH). Specifically, differential cross sections (DCSs) have been measured and calculated for the electron-impact excitation of the electronic states of C{sub 6}H{sub 5}OH. The measurements were carried out at energies in the range 15–40 eV, and for scattered-electron angles between 10{sup ∘} and 90{sup ∘}. The energy resolution of those experiments was typically ∼80 meV. Corresponding Schwinger multichannel method with pseudo-potentials calculations, with and without Born-closure, were also performed for a sub-set of the excited electronic-states that were accessed in the measurements. Those calculations were conducted at the static exchange plus polarisation (SEP)-level using a minimum orbital basis for single configuration interaction (MOBSCI) approach. Agreement between the measured and calculated DCSs was typically fair, although to obtain quantitative accord, the theory would need to incorporate even more channels into the MOBSCI.

  19. Tunable electronic transport properties of silicon-fullerene-linked nanowires: Semiconductor, conducting wire, and tunnel diode

    NASA Astrophysics Data System (ADS)

    Nishio, Kengo; Ozaki, Taisuke; Morishita, Tetsuya; Mikami, Masuhiro

    2010-03-01

    We explore the possibility of controllable tuning of the electronic transport properties of silicon-fullerene-linked nanowires by encapsulating guest atoms into their cages. Our first-principles calculations demonstrate that the guest-free nanowires are semiconductors, and do not conduct electricity. The iodine or sodium doping improves the transport properties, and makes the nanowires metallic. In the junctions of I-doped and Na-doped NWs, the current travels through the boundary by quantum tunneling. More significantly, the junctions have asymmetric I-Vb curves, which could be used as rectifiers. The current-voltage curves are interpreted by band-overlapping models. Tunable electronic transport properties of silicon-fullerene-linked nanowires could find many applications such as field-effect transistors, conducting wires, and tunnel diodes.

  20. Tunability of Band Gap in Multilayer Phosphorene by External Electric Fields and Electron Dopings

    NASA Astrophysics Data System (ADS)

    Baik, Seung Su; Choi, Hyoung Joon

    2015-03-01

    Black phosphorus (BP) and its two-dimensional derivative phosphorene are rapidly emerging nanoelectronic materials with potential applicability to field effect transistors and optoelectronic devices. Unlike the gapless semiconductor graphene, multilayer BP has a substantial band gap of ~ 0.2 eV and the band-gap size is reportedly varied by external electric fields. To explore the extensibility of such band-gap modulation, we have investigated electronic band structures of multilayer BP by using the first-principles density-functional method as implemented in the SIESTA code. By controlling the electron doping concentrations and the resultant electric fields therefrom, we examine the manageability of the band-gap size and the anisotropic carrier mobility. This work was supported by NRF of Korea (Grant No. 2011-0018306) and KISTI supercomputing center (Project No. KSC-2013-C3-062).

  1. Electronic band structure and effective mass parameters of Ge1-xSnx alloys

    NASA Astrophysics Data System (ADS)

    Lu Low, Kain; Yang, Yue; Han, Genquan; Fan, Weijun; Yeo, Yee-Chia

    2012-11-01

    This work investigates the electronic band structures of bulk Ge1-xSnx alloys using the empirical pseudopotential method (EPM) for Sn composition x varying from 0 to 0.2. The adjustable form factors of EPM were tuned in order to reproduce the band features that agree well with the reported experimental data. Based on the adjusted pseudopotential form factors, the band structures of Ge1-xSnx alloys were calculated along high symmetry lines in the Brillouin zone. The effective masses at the band edges were extracted by using a parabolic line fit. The bowing parameters of hole and electron effective masses were then derived by fitting the effective mass at different Sn compositions by a quadratic polynomial. The hole and electron effective mass were examined for bulk Ge1-xSnx alloys along specific directions or orientations on various crystal planes. In addition, employing the effective-mass Hamiltonian for diamond semiconductor, band edge dispersion at the Γ-point calculated by 8-band k.p. method was fitted to that obtained from EPM approach. The Luttinger-like parameters were also derived for Ge1-xSnx alloys. They were obtained by adjusting the effective-mass parameters of k.p method to fit the k.p band structure to that of the EPM. These effective masses and derived Luttinger parameters are useful for the design of optical and electronic devices based on Ge1-xSnx alloys.

  2. Improvement by heating of the electronic conductivity of cobalt spinel phases, electrochemically synthesized in various electrolytes

    SciTech Connect

    Douin, Myriam; Guerlou-Demourgues, Liliane; Menetrier, Michel; Bekaert, Emilie; Goubault, Lionel; Bernard, Patrick; Delmas, Claude

    2009-05-15

    The nature of the alkaline electrolyte (based on KOH, NaOH, LiOH), in which Co{sub 3}O{sub 4} spinel type phases are synthesized by electrooxidation of CoO, is shown to play a key role on the composition, the structure and the electronic conductivity of the materials. In the materials, prepared in pure LiOH electrolyte or in mixed ternary electrolyte (KOH, NaOH, LiOH), Co{sup 4+} ions are present in the octahedral framework, which entails electronic delocalization in the cobalt T{sub 2g} band and a high conductivity. The structure of the sample, synthesized in KOH, is on the opposite closer to that of ideal Co{sub 3}O{sub 4}, with only Co{sup 3+} in the octahedral sublattice, which leads to a semi-conducting behavior. Whatever the initial material, a thermal treatment induces an increase of the Co{sup 4+}/Co{sup 3+} ratio in the octahedral network, resulting in a significant increase of the electronic conductivity. - Graphical abstract: In 'Co{sub 3}O{sub 4}' type spinel phases synthesized by eleectrooxidation, the nature of the alkaline electrolyte allows to monitor the amounts of hydrogen and lithium, inserted in spinel framework and therefore the electronic conductivity. Whatever the initial synthesis electrolyte, a moderate thermal treatment of the materials induces a significant increase of the electronic conductivity, due to a structural reorganization (illustrated by the evolution of the cell parameter) and an increase of the Co{sup 4+}/Co{sup 3+} ratio in the octahedral framework.

  3. Magnetic-field-induced density of states in Mg B2 : Spin susceptibility measured by conduction-electron spin resonance

    NASA Astrophysics Data System (ADS)

    Simon, F.; Jánossy, A.; Fehér, T.; Murányi, F.; Garaj, S.; Forró, L.; Petrovic, C.; Bud'Ko, S.; Ribeiro, R. A.; Canfield, P. C.

    2005-07-01

    The magnetic-field dependence of the electron spin susceptibility χs was measured in the superconducting state of high-purity MgB2 fine powders from the intensity of the conduction-electron spin resonance at 3.8, 9.4, and 35GHz . The measurements confirm that a large part of the density of states is restored at low temperatures at fields below 1T in qualitative agreement with the closing of the π band gaps in the two-band model. However, the increase of χs with field and temperature is larger than expected from current superconductor models of MgB2 .

  4. Interaction of Cr3+ with valence and conduction bands in the long persistent phosphor ZnGa2O4:Cr3+, studied by ENDOR spectroscopy

    NASA Astrophysics Data System (ADS)

    Binet, Laurent; Sharma, Suchinder K.; Gourier, Didier

    2016-09-01

    Cr3+-doped zinc gallate ZnGa2O4 is a red-near infrared (IR) long persistent phosphor that can be excited by orange-red light, in the transparency window of living tissues. With this property, persistent luminescence nanoparticles were recently used for in vivo optical imaging of tumors in mice. In order to understand the origin of the excitability of persistent luminescence by visible light in this material, a Q-band ENDOR investigation of 71/69Ga and 53Cr nuclei was performed in ZnGa2O4:Cr3+ to get information on the interaction of Cr3+ with valence and conduction bands. The positive electron spin density at Ga nuclei revealed a dominant interaction of the 4A2 ground state of Cr3+ with the valence band, and a weaker interaction with the conduction band. The latter may occur only in the excited 2E and 4T2 states of Cr3+. It is proposed that when these two interactions are present, pairs of electrons and holes can be generated from excited Cr3+ in distorted sites undergoing local electric field produced by neighboring defects with opposite charges.

  5. Interaction of Cr(3+) with valence and conduction bands in the long persistent phosphor ZnGa2O4:Cr(3+), studied by ENDOR spectroscopy.

    PubMed

    Binet, Laurent; Sharma, Suchinder K; Gourier, Didier

    2016-09-28

    Cr(3+)-doped zinc gallate ZnGa2O4 is a red-near infrared (IR) long persistent phosphor that can be excited by orange-red light, in the transparency window of living tissues. With this property, persistent luminescence nanoparticles were recently used for in vivo optical imaging of tumors in mice. In order to understand the origin of the excitability of persistent luminescence by visible light in this material, a Q-band ENDOR investigation of (71/69)Ga and (53)Cr nuclei was performed in ZnGa2O4:Cr(3+) to get information on the interaction of Cr(3+) with valence and conduction bands. The positive electron spin density at Ga nuclei revealed a dominant interaction of the (4)A2 ground state of Cr(3+) with the valence band, and a weaker interaction with the conduction band. The latter may occur only in the excited (2)E and (4)T2 states of Cr(3+). It is proposed that when these two interactions are present, pairs of electrons and holes can be generated from excited Cr(3+) in distorted sites undergoing local electric field produced by neighboring defects with opposite charges. PMID:27460505

  6. Vibrational renormalisation of the electronic band gap in hexagonal and cubic ice

    SciTech Connect

    Engel, Edgar A. Needs, Richard J.; Monserrat, Bartomeu

    2015-12-28

    Electron-phonon coupling in hexagonal and cubic water ice is studied using first-principles quantum mechanical methods. We consider 29 distinct hexagonal and cubic ice proton-orderings with up to 192 molecules in the simulation cell to account for proton-disorder. We find quantum zero-point vibrational corrections to the minimum electronic band gaps ranging from −1.5 to −1.7 eV, which leads to improved agreement between calculated and experimental band gaps. Anharmonic nuclear vibrations play a negligible role in determining the gaps. Deuterated ice has a smaller band-gap correction at zero-temperature of −1.2 to −1.4 eV. Vibrations reduce the differences between the electronic band gaps of different proton-orderings from around 0.17 eV to less than 0.05 eV, so that the electronic band gaps of hexagonal and cubic ice are almost independent of the proton-ordering when quantum nuclear vibrations are taken into account. The comparatively small reduction in the band gap over the temperature range 0 − 240 K of around 0.1 eV does not depend on the proton ordering, or whether the ice is protiated or deuterated, or hexagonal, or cubic. We explain this in terms of the atomistic origin of the strong electron-phonon coupling in ice.

  7. Electronic conductivity studies on oxyhalide glasses containing TMO

    NASA Astrophysics Data System (ADS)

    Vijayatha, D.; Viswanatha, R.; Sujatha, B.; Narayana Reddy, C.

    2016-05-01

    Microwave-assisted synthesis is cleaner, more economical and much faster than conventional methods. The development of new routes for the synthesis of solid materials is an integral part of material science and technology. The electronic conductivity studies on xPbCl2 - 60 PbO - (40-x) V2O5 (1 ≥ x ≤ 10) glass system has been carried out over a wide range of composition and temperature (300 K to 423 K). X-ray diffraction study confirms the amorphous nature of the samples. The Scanning electron microscopic studies reveal the formation of cluster like morphology in PbCl2 containing glasses. The d.c conductivity exhibits Arrhenius behaviour and increases with V2O5 concentration. Analysis of the results is interpreted in view Austin-Mott's small polaron model of electron transport. Activation energies calculated using regression analysis exhibit composition dependent trend and the variation is explained in view of the structure of lead-vanadate glass.

  8. The effect of driven electron-phonon coupling on the electronic conductance of a polar nanowire

    SciTech Connect

    Mardaani, Mohammad Rabani, Hassan; Esmaili, Esmat; Shariati, Ashrafalsadat

    2015-08-07

    A semi-classical model is proposed to explore the effect of electron-phonon coupling on the coherent electronic transport of a polar chain which is confined between two rigid leads in the presence of an external electric field. To this end, we construct the model by means of Green's function technique within the nearest neighbor tight-binding and harmonic approximations. For a time-periodic electric field, the atomic displacements from the equilibrium positions are obtained precisely. The result is then used to compute the electronic transport properties of the chain within the Peierls-type model. The numerical results indicate that the conductance of the system shows interesting behavior in some special frequencies. For each special frequency, there is an electronic quasi-state in which the scattering of electrons by vibrating atoms reaches maximum. The system electronic conductance decreases dramatically at the strong electron-phonon couplings and low electron energies. In the presence of damping forces, the electron-phonon interaction has a less significant effect on the conductance.

  9. Mixed oxygen ion/electron-conducting ceramics for oxygen separation

    SciTech Connect

    Stevenson, J.W.; Armstrong, T.R.; Armstrong, B.L.

    1996-08-01

    Mixed oxygen ion and electron-conducting ceramics are unique materials that can passively separate high purity oxygen from air. Oxygen ions move through a fully dense ceramic in response to an oxygen concentration gradient, charge-compensated by an electron flux in the opposite direction. Compositions in the system La{sub 1{minus}x}M{sub x}Co{sub 1{minus}y{minus}z}Fe{sub y}N{sub z}O{sub 3{minus}{delta}}, perovskites where M=Sr, Ca, and Ba, and N=Mn, Ni, Cu, Ti, and Al, have been prepared and their electrical, oxygen permeation, oxygen vacancy equilibria, and catalytic properties evaluated. Tubular forms, disks, and asymmetric membrane structures, a thin dense layer on a porous support of the same composition, have been fabricated for testing purposes. In an oxygen partial gradient, the passive oxygen flux through fully dense structures was highly dependent on composition. An increase in oxygen permeation with increased temperature is attributed to both enhanced oxygen vacancy mobility and higher vacancy populations. Highly acceptor-doped compositions resulted in oxygen ion mobilities more than an order of magnitude higher than yttria-stabilized zirconia. The mixed conducting ceramics have been utilized in a membrane reactor configuration to upgrade methane to ethane and ethylene. Conditions were established to balance selectivity and throughput in a catalytic membrane reactor constructed from mixed conducting ceramics.

  10. Molecular Electronic Angular Motion Transducer Broad Band Self-Noise.

    PubMed

    Zaitsev, Dmitry; Agafonov, Vadim; Egorov, Egor; Antonov, Alexander; Shabalina, Anna

    2015-01-01

    Modern molecular electronic transfer (MET) angular motion sensors combine high technical characteristics with low cost. Self-noise is one of the key characteristics which determine applications for MET sensors. However, until the present there has not been a model describing the sensor noise in the complete operating frequency range. The present work reports the results of an experimental study of the self-noise level of such sensors in the frequency range of 0.01-200 Hz. Based on the experimental data, a theoretical model is developed. According to the model, self-noise is conditioned by thermal hydrodynamic fluctuations of the operating fluid flow in the frequency range of 0.01-2 Hz. At the frequency range of 2-100 Hz, the noise power spectral density has a specific inversely proportional dependence of the power spectral density on the frequency that could be attributed to convective processes. In the high frequency range of 100-200 Hz, the noise is conditioned by the voltage noise of the electronics module input stage operational amplifiers and is heavily reliant to the sensor electrical impedance. The presented results allow a deeper understanding of the molecular electronic sensor noise nature to suggest the ways to reduce it. PMID:26610502

  11. Molecular Electronic Angular Motion Transducer Broad Band Self-Noise

    PubMed Central

    Zaitsev, Dmitry; Agafonov, Vadim; Egorov, Egor; Antonov, Alexander; Shabalina, Anna

    2015-01-01

    Modern molecular electronic transfer (MET) angular motion sensors combine high technical characteristics with low cost. Self-noise is one of the key characteristics which determine applications for MET sensors. However, until the present there has not been a model describing the sensor noise in the complete operating frequency range. The present work reports the results of an experimental study of the self-noise level of such sensors in the frequency range of 0.01–200 Hz. Based on the experimental data, a theoretical model is developed. According to the model, self-noise is conditioned by thermal hydrodynamic fluctuations of the operating fluid flow in the frequency range of 0.01–2 Hz. At the frequency range of 2–100 Hz, the noise power spectral density has a specific inversely proportional dependence of the power spectral density on the frequency that could be attributed to convective processes. In the high frequency range of 100–200 Hz, the noise is conditioned by the voltage noise of the electronics module input stage operational amplifiers and is heavily reliant to the sensor electrical impedance. The presented results allow a deeper understanding of the molecular electronic sensor noise nature to suggest the ways to reduce it. PMID:26610502

  12. Electronic band structures of Ge1-xSnx semiconductors: A first-principles density functional theory study

    NASA Astrophysics Data System (ADS)

    Lee, Ming-Hsien; Liu, Po-Liang; Hong, Yung-An; Chou, Yen-Ting; Hong, Jia-Yang; Siao, Yu-Jin

    2013-02-01

    We conduct first-principles total-energy density functional calculations to study the band structures in Ge1-xSnx infrared semiconductor alloys. The norm-conserving optimized pseudopotentials of Ge and Sn have been constructed for electronic structure calculations. The composition-bandgap relationships in Ge1-xSnx lattices are evaluated by a detailed comparison of structural models and their electronic band structures. The critical Sn composition related to the transition from indirect- to direct-gap in Ge1-xSnx alloys is estimated to be as low as x ˜ 0.016 determined from the parametric fit. Our results show that the crossover Sn concentration occurs at a lower critical Sn concentration than the values predicted from the absorption measurements. However, early results indicate that the reliability of the critical Sn concentration from such measurements is hard to establish, since the indirect gap absorption is much weaker than the direct gap absorption. We find that the direct band gap decreases exponentially with the Sn composition over the range 0 0.375, in very good agreement with the theoretical observed behavior [D. W. Jenkins and J. D. Dow, Phys. Rev. B 36, 7994, 1987]. For homonuclear and heteronuclear complexes of Ge1-xSnx alloys, the indirect band gap at L-pointis is found to decrease homonuclear Ge-Ge bonds or increase homonuclear Sn-Sn bonds as a result of the reduced L valley. All findings agree with previously reported experimental and theoretical results. The analysis suggests that the top of valence band exhibits the localization of bond charge and the bottom of the conduction band is composed of the Ge 4s4p and/or Sn 5s5p atomic orbits.

  13. Unoccupied-electronic-band structure of graphite studied by angle-resolved secondary-electron emission and inverse photoemission

    NASA Astrophysics Data System (ADS)

    Maeda, F.; Takahashi, T.; Ohsawa, H.; Suzuki, S.; Suematsu, H.

    1988-03-01

    Angle-resolved inverse photoemission spectroscopy (ARIPES) and angle-resolved secondary-electron emission spectroscopy (ARSEES) have been performed for graphite to establish experimentally the unoccupied-electronic-band structure as well as to study the difference between the two techniques. Remarkable differences have been found in the experimental two-dimensional band structures obtained by the two methods. The experimental results have been compared with the two different band calculations by R. C. Tatar and S. Rabii [Phys. Rev. B 25, 4126 (1982)] and by N. A. W. Holzwarth, S. G. Louie, and S. Rabii [Phys. Rev. B 26, 5382 (1982)] with special attention to the energy position of the three-dimensional interlayer band. The possible origin of the difference between ARIPES and ARSEES has also been discussed.

  14. A nonlocal electron conduction model for multidimensional radiation hydrodynamics codes

    NASA Astrophysics Data System (ADS)

    Schurtz, G. P.; Nicolaï, Ph. D.; Busquet, M.

    2000-10-01

    Numerical simulation of laser driven Inertial Confinement Fusion (ICF) related experiments require the use of large multidimensional hydro codes. Though these codes include detailed physics for numerous phenomena, they deal poorly with electron conduction, which is the leading energy transport mechanism of these systems. Electron heat flow is known, since the work of Luciani, Mora, and Virmont (LMV) [Phys. Rev. Lett. 51, 1664 (1983)], to be a nonlocal process, which the local Spitzer-Harm theory, even flux limited, is unable to account for. The present work aims at extending the original formula of LMV to two or three dimensions of space. This multidimensional extension leads to an equivalent transport equation suitable for easy implementation in a two-dimensional radiation-hydrodynamic code. Simulations are presented and compared to Fokker-Planck simulations in one and two dimensions of space.

  15. Nitrogen defects in wide band gap oxides: defect equilibria and electronic structure from first principles calculations.

    PubMed

    Polfus, Jonathan M; Bjørheim, Tor S; Norby, Truls; Haugsrud, Reidar

    2012-09-01

    The nitrogen related defect chemistry and electronic structure of wide band gap oxides are investigated by density functional theory defect calculations of N(O)(q), NH(O)(×), and (NH2)(O)(·) as well as V(O)(··) and OH(O)(·) in MgO, CaO, SrO, Al(2)O(3), In(2)O(3), Sc(2)O(3), Y(2)O(3), La(2)O(3), TiO(2), SnO(2), ZrO(2), BaZrO(3), and SrZrO(3). The N(O)(q) acceptor level is found to be deep and the binding energy of NH(O)(×) with respect to N(O)' and (OH(O)(·) is found to be significantly negative, i.e. binding, in all of the investigated oxides. The defect structure of the oxides was found to be remarkably similar under reducing and nitriding conditions (1 bar N(2), 1 bar H(2) and 1 × 10(-7) bar H(2)O): NH(O)(×) predominates at low temperatures and [N(O)'] = 2[V(O)(··) predominates at higher temperatures (>900 K for most of the oxides). Furthermore, we evaluate how the defect structure is affected by non-equilibrium conditions such as doping and quenching. In terms of electronic structure, N(O)' is found to introduce isolated N-2p states within the band gap, while the N-2p states of NH(O)(×) are shifted towards, or overlap with the VBM. Finally, we assess the effect of nitrogen incorporation on the proton conducting properties of oxides and comment on their corrosion resistance in nitriding atmospheres in light of the calculated defect structures. PMID:22828729

  16. Topological band order, structural, electronic and optical properties of XPdBi (X = Lu, Sc) compounds

    NASA Astrophysics Data System (ADS)

    Narimani, M.; Nourbakhsh, Z.

    2016-05-01

    In this paper, the structural, electronic and optical properties of LuPdBi and ScPdBi compounds are investigated using the density functional theory by WIEN2K package within the generalized gradient approximation, local density approximation, Engel-Vosco generalized gradient approximations and modified Becke-Johnson potential approaches. The topological phases and band orders of these compounds are studied. The effect of pressure on band inversion strength, electron density of states and the linear coefficient of the electronic specific heat of these compounds is investigated. Furthermore, the effect of pressure on real and imaginary parts of dielectric function, absorption and reflectivity coefficients of these compounds is studied.

  17. New secondary batteries utilizing electronically conductive polymer cathodes

    NASA Technical Reports Server (NTRS)

    Martin, Charles R.; White, Ralph E.

    1989-01-01

    The objectives of this project are to optimize the transport rates in electronically conductive polypyrrole films by controlling the morphology of the film and to assess the utility of these films as cathodes in a lithium/polypyrrole secondary battery. During this research period, progress has been made in improving the charge transport rate of the supermolecular-engineered polypyrrole electrode by eliminating the polypyrrole baselayer that hampered earlier work. Also, the fibril density of the polypyrrole electrode was increased, providing more electroactive sites per unit area.

  18. New secondary batteries utilizing electronically conductive polymer cathodes

    NASA Technical Reports Server (NTRS)

    Martin, Charles R.; White, Ralph E.

    1989-01-01

    The objectives of this project are to characterize the transport properties in electronically conductive polymers and to assess the utility of these films as cathodes in lithium/polymer secondary batteries. During this research period, progress has been made in a literature survey of the historical background, methods of preparation, the physical and chemical properties, and potential technological applications of polythiophene. Progress has also been made in the characterization of polypyrrole flat films and fibrillar films. Cyclic voltammetry and potential step chronocoulometry were used to gain information on peak currents and potentials switching reaction rates, charge capacity, and charge retention. Battery charge/discharge studies were also performed.

  19. Electronic conductivity in polyaromatic hydrocarbon glasses: A theoretical perspective.

    PubMed

    Ganzenmüller, Georg; Koslowski, Thorsten

    2006-07-01

    Based upon Monte Carlo simulations of amorphous molecular glasses, we have computed the electronic structure of five prototypical polyaromatic hydrocarbons using an extended Su-Schrieffer-Heeger model [J. R. Schrieffer, W. P. Su, and A. J. Heeger, Phys. Rev. Lett. 42, 1698 (1979)]. In the presence of excess charges, the resulting potential energy surfaces have been analyzed using Marcus' [Annu. Rev. Phys. Chem. 15, 155 (1964)] theory of charge transfer to yield reaction coefficients and--via the application of linear response theory--local conductivities. Applying Kirchhoff's rules, the emerging random resistor network problem leads to global conductivities of the order of 10(-1)-1 Scm, which correlate with the structural characteristics of the underlying geometry. PMID:16863324

  20. Electronic conductivity in polyaromatic hydrocarbon glasses: A theoretical perspective

    SciTech Connect

    Ganzenmueller, Georg; Koslowski, Thorsten

    2006-07-07

    Based upon Monte Carlo simulations of amorphous molecular glasses, we have computed the electronic structure of five prototypical polyaromatic hydrocarbons using an extended Su-Schrieffer-Heeger model [J. R. Schrieffer, W. P. Su, and A. J. Heeger, Phys. Rev. Lett. 42, 1698 (1979)]. In the presence of excess charges, the resulting potential energy surfaces have been analyzed using Marcus' [Annu. Rev. Phys. Chem. 15, 155 (1964)] theory of charge transfer to yield reaction coefficients and--via the application of linear response theory--local conductivities. Applying Kirchhoff's rules, the emerging random resistor network problem leads to global conductivities of the order of 10{sup -1}-1 S/cm, which correlate with the structural characteristics of the underlying geometry.

  1. Mixed Dimensionality of Confined Conducting Electrons in the Surface Region of SrTiO3

    NASA Astrophysics Data System (ADS)

    Plumb, N. C.; Salluzzo, M.; Razzoli, E.; Mânsson, M.; Falub, M.; Krempasky, J.; Matt, C. E.; Chang, J.; Schulte, M.; Braun, J.; Ebert, H.; Minár, J.; Delley, B.; Zhou, K.-J.; Schmitt, T.; Shi, M.; Mesot, J.; Patthey, L.; Radović, M.

    2014-08-01

    Using angle-resolved photoemission spectroscopy, we show that the recently discovered surface state on SrTiO3 consists of nondegenerate t2g states with different dimensional characters. While the dxy bands have quasi-2D dispersions with weak kz dependence, the lifted dxz/dyz bands show 3D dispersions that differ significantly from bulk expectations and signal that electrons associated with those orbitals permeate the near-surface region. Like their more 2D counterparts, the size and character of the dxz/dyz Fermi surface components are essentially the same for different sample preparations. Irradiating SrTiO3 in ultrahigh vacuum is one method observed so far to induce the "universal" surface metallic state. We reveal that during this process, changes in the oxygen valence band spectral weight that coincide with the emergence of surface conductivity are disproportionate to any change in the total intensity of the O 1s core level spectrum. This signifies that the formation of the metallic surface goes beyond a straightforward chemical doping scenario and occurs in conjunction with profound changes in the initial states and/or spatial distribution of near-EF electrons in the surface region.

  2. Exploring the Electronic Band Structure of Organometal Halide Perovskite via Photoluminescence Anisotropy of Individual Nanocrystals.

    PubMed

    Täuber, Daniela; Dobrovolsky, Alexander; Camacho, Rafael; Scheblykin, Ivan G

    2016-08-10

    Understanding electronic processes in organometal halide perovskites, flourishing photovoltaic, and emitting materials requires unraveling the origin of their electronic transitions. Light polarization studies can provide important information regarding transition dipole moment orientations. Investigating individual methylammonium lead triiodide perovskite nanocrystals enabled us to detect the polarization of photoluminescence intensity and photoluminescence excitation, hidden in bulk samples by ensemble averaging. Polarization properties of the crystals were correlated with their photoluminescence spectra and electron microscopy images. We propose that distortion of PbI6 octahedra leads to peculiarities of the electronic band structure close to the band-edge. Namely, the lowest band transition possesses a transition dipole moment along the apical Pb-I-Pb bond resulting in polarized photoluminescence. Excitation of photoluminescence above the bandgap is unpolarized because it involves molecular orbitals delocalized both in the apical and equatorial directions of the perovskite octahedron. Trap-assisted emission at 77 K, rather surprisingly, was polarized similar to the bandgap emission. PMID:27462927

  3. Band structure and fermi surface of Electron-Doped C{sub 60} Monolayers

    SciTech Connect

    Yang, W.L.; Brouet, V.; Zhou, X.J.; Choi, Hyoung J.; Louie, Steven G.; Cohen, Marvin L.; Kellar, S.A.; Bogdanov, P.V.; Lanzara, A.; Goldoni, A.; Parmigiani, F.; Hussain, Z.; Shen, Z-X.

    2003-11-06

    C60 fullerides are challenging systems because both the electron-phonon and electron-electron interactions are large on the energy scale of the expected narrow band width. We report angle-resolved photoemission data on the band dispersion for an alkali doped C60 monolayer and a detailed comparison with theory. Compared to the maximum bare theoretical band width of 170 meV, the observed 100-meV dispersion is within the range of renormalization by electron-phonon coupling. This dispersion is only a fraction of the integrated peak width, revealing the importance of many-body effects. Additionally, measurements on the Fermi surface indicate the robustness of the Luttinger theorem even for materials with strong interactions.

  4. Band structure and Fermi surface of electron-doped C60 monolayers.

    PubMed

    Yang, W L; Brouet, V; Zhou, X J; Choi, Hyoung J; Louie, Steven G; Cohen, Marvin L; Kellar, S A; Bogdanov, P V; Lanzara, A; Goldoni, A; Parmigiani, F; Hussain, Z; Shen, Z-X

    2003-04-11

    C60 fullerides are challenging systems because both the electron-phonon and electron-electron interactions are large on the energy scale of the expected narrow band width. We report angle-resolved photoemission data on the band dispersion for an alkali-doped C60 monolayer and a detailed comparison with theory. Compared to the maximum bare theoretical band width of 170 meV, the observed 100-meV dispersion is within the range of renormalization by electron-phonon coupling. This dispersion is only a fraction of the integrated peak width, revealing the importance of many-body effects. Additionally, measurements on the Fermi surface indicate the robustness of the Luttinger theorem even for materials with strong interactions. PMID:12690192

  5. Theory of thermal conductivity in the disordered electron liquid

    NASA Astrophysics Data System (ADS)

    Schwiete, G.; Finkel'stein, A. M.

    2016-03-01

    We study thermal conductivity in the disordered two-dimensional electron liquid in the presence of long-range Coulomb interactions. We describe a microscopic analysis of the problem using the partition function defined on the Keldysh contour as a starting point. We extend the renormalization group (RG) analysis developed for thermal transport in the disordered Fermi liquid and include scattering processes induced by the long-range Coulomb interaction in the sub-temperature energy range. For the thermal conductivity, unlike for the electrical conductivity, these scattering processes yield a logarithmic correction that may compete with the RG corrections. The interest in this correction arises from the fact that it violates the Wiedemann-Franz law. We checked that the sub-temperature correction to the thermal conductivity is not modified either by the inclusion of Fermi liquid interaction amplitudes or as a result of the RG flow. We therefore expect that the answer obtained for this correction is final. We use the theory to describe thermal transport on the metallic side of the metal-insulator transition in Si MOSFETs.

  6. Electronic structure of graphene on a reconstructed Pt(100) surface: Hydrogen adsorption, doping, and band gaps

    NASA Astrophysics Data System (ADS)

    Ulstrup, Søren; Nilsson, Louis; Miwa, Jill A.; Balog, Richard; Bianchi, Marco; Hornekær, Liv; Hofmann, Philip

    2013-09-01

    We probe the structure and electronic band structure of graphene grown on a Pt(100) substrate using scanning tunneling microscopy, low energy electron diffraction, and angle-resolved photoemission spectroscopy. It is found that the graphene layer lacks a well-defined azimuthal orientation with respect to the substrate, causing a circular smearing of the π band instead of a well-defined Dirac cone near the Fermi level. The graphene is found to be electron doped placing the Dirac point ˜0.45 eV below the Fermi level, and a gap of 0.15±0.03 eV is found at the Dirac point. We dose atomic hydrogen and monitor the coverage on the graphene by analyzing the impurity-induced broadening of the π-band width. Saturation of graphene on Pt(100) with hydrogen does not expand the band gap, but instead hydrogen-mediated broadening and rehybridization of the graphene sp2 bonds into sp3 leads to a complete disruption of the graphene π band, induces a lifting of the Pt(100) reconstruction, and introduces a dispersing Pt state near the Fermi level. Deposition of rubidium on graphene on Pt(100) leads to further electron doping, pushing the Dirac point to a binding energy of ˜1.35 eV, and increasing the band gap to 0.65±0.04 eV.

  7. Structure and electronic properties of conducting, ternary TixTa1-xN films

    NASA Astrophysics Data System (ADS)

    Matenoglou, G. M.; Lekka, Ch. E.; Koutsokeras, L. E.; Karras, G.; Kosmidis, C.; Evangelakis, G. A.; Patsalas, P.

    2009-05-01

    We report on the electronic structure and optical properties of conducting ternary transition metal nitrides consisting of metals of different groups of the periodic table of elements. For the study of the bonding, electronic structure, and optical properties of conducting TixTa1-xN film growth, optical spectroscopy and ab initio calculations were used. Despite the different valence electron configuration of the constituent elements, Ta(d3s2) and Ti(d2s2), we show that TiN and TaN are completely soluble due to the hybridization of the d and sp electrons of the metals and N, respectively, that stabilizes the ternary TixTa1-xN systems to the rocksalt structure. The optical properties of TixTa1-xN have been studied using spectroscopic methods and detailed electronic structure calculations, revealing that the plasma energy of the fully dense TixTa1-xN is varying between 7.8 and 9.45 eV. Additional optical absorption bands are manifested due to the N p →Ti/Ta d interband transition the t2g→eg transition due to splitting of the metals' d band, with the major exception of the Ti0.50Ta0.50N, where the eg unoccupied states are not manifested due to the local structure of the ternary system; this finding is observed for the first time and proves previous assignments of optical transitions in TaN.

  8. Band gaps, ionization potentials, and electron affinities of periodic electron systems via the adiabatic-connection fluctuation-dissipation theorem

    NASA Astrophysics Data System (ADS)

    Trushin, Egor; Betzinger, Markus; Blügel, Stefan; Görling, Andreas

    2016-08-01

    An approach to calculate fundamental band gaps, ionization energies, and electron affinities of periodic electron systems is explored. Starting from total energies obtained with the help of the adiabatic-connection fluctuation-dissipation (ACFD) theorem, these physical observables are calculated according to their basic definition by differences of the total energies of the N -, (N -1 ) -, and (N +1 ) -electron system. The response functions entering the ACFD theorem are approximated here by the direct random phase approximation (dRPA). For a set of prototypical semiconductors and insulators it is shown that even with this quite drastic approximation the resulting band gaps are very close to experiment and of a similar quality to those from the computationally more involved G W approximation. By going beyond the dRPA in the future the accuracy of the calculated band gaps may be significantly improved further.

  9. Ion-Electron-Conducting Polymer Composites: Promising Electromagnetic Interference Shielding Material.

    PubMed

    Vyas, Manoj Kumar; Chandra, Amita

    2016-07-20

    Polymer nanocomposites consisting of poly(vinylidenefluoride-co-hexafluoropropylene) PVdF-HFP, inorganic salt (LiBF4), organic salt (EMIMBF4), multiwalled carbon nanotubes (MWCNTs), and Fe3O4 nanoparticles were prepared as electromagnetic shield material. Improvement in conductivity and dielectric property due to the introduction of EMIMBF4, LiBF4, and MWCNTs was confirmed by complex impedance spectroscopy. The highest conductivity obtained is ∼1.86 mS/cm. This is attributed to the high ionic conductivity of the ionic liquids and the formation of a connecting network by the MWCNTs facilitating electron conduction. The total electromagnetic interference (EMI) shielding effectiveness has a major contribution to it due to absorption. Although the total shielding effectiveness in the Ku band (12.4-18 GHz) of pure ion-conducting system was found to be ∼19 dB and that for the polymer composites which are mixed (ion + electron) conductors is ∼46 dB, the contributions due to absorption are ∼16 and ∼42 dB, respectively. PMID:27351810

  10. Anisotropic optical conductivity and electron-hole asymmetry in doped monolayer graphene in the presence of the Rashba coupling

    NASA Astrophysics Data System (ADS)

    Sadeghi, S. S.; Phirouznia, A.; Fallahi, V.

    2015-06-01

    In this study, the optical conductivity of substitutionary doped graphene is investigated in the presence of the Rashba spin orbit coupling (RSOC). Calculations have been performed within the coherent potential approximation (CPA) beyond the Dirac cone approximation. Results of the current study demonstrate that the optical conductivity is increased by increasing the RSOC strength. Meanwhile it was observed that the anisotropy of the band energy results in a considerable anisotropic optical conductivity (AOC) in monolayer graphene. The sign and magnitude of this anisotropic conductivity was shown to be controlled by the external field frequency. It was also shown that the Rashba interaction results in electron-hole asymmetry in monolayer graphene.

  11. Electronic and ionic conductivities in superionic Li4C60

    NASA Astrophysics Data System (ADS)

    Quintavalle, D.; Márkus, B. G.; Jánossy, A.; Simon, F.; Klupp, G.; Győri, M. A.; Kamarás, K.; Magnani, G.; Pontiroli, D.; Riccò, M.

    2016-05-01

    The 10 GHz microwave conductivity, σ (T ) and high field, 222 GHz electron spin resonance (HF-ESR) of Li4C60 fulleride is measured in a wide temperature range. We suggest that the majority of ESR active sites and at least some of the charge carriers for σ (T ) are electrons bound to a small concentration of surplus or vacancy ions in the polymer phase. Both σ (T ) and the ESR line shape depend on ionic motion. A change of the activation energy of σ (T ) at 125 K coincides with the onset of the ionic DC conductivity. The ESR line shape is determined mainly by Li ionic motion within octahedral voids below 150 K. At higher temperatures, fluctuations due to ionic diffusion change the environment of defects from axial to effectively isotropic on the ESR time scale. σ (T ) data up to 700 K through the depolymerization transition confirm that the monomeric phase of Li4C60 is a metal.

  12. Near band-edge luminescence and evidence of the weakening of the N-conduction-band coupling for partially relaxed and high nitrogen composition GaAs1-xNx epilayers

    NASA Astrophysics Data System (ADS)

    Coaquira, J. A. H.; Pinault, M.-A.; Litvinchuk, A. P.; Bhusal, L.; Freundlich, Alex

    2007-10-01

    Photoluminescence and absorption spectroscopy experiments are implemented on as-grown and thermally annealed GaAs1-xNx epilayers grown on GaAs(001) having a nitrogen content in the range of 0.4%-7.1%. At low temperature, photoluminescence spectra exhibit two sets of features: (i) a relatively broad peak at low energy in the vicinity of the band gap predicted by the band anticrossing model (BAC) and (ii) sharp excitonic features at higher energy (over 100meV above the band gap for x >4%). An enhancement of the photoluminescence response of excitonic emissions and a notable intensity reduction of the deeper luminescence were systematically observed for samples subjected to high-temperature postgrowth annealing treatments. For pseudomorphically strained low nitrogen-containing epilayers (x<2%), and by taking into account the strain magnitude and the average substitutional nitrogen concentration (as extracted from x-ray analysis), excitonic energies and corresponding band gaps (as determined by absorption spectroscopy) are well described within the framework of the BAC model. The extracted binding energies of split heavy- and light-hole excitons are found to be consistent with the expected increase of electron effective masses. For thick partially relaxed epilayers (1%4%), the fundamental band gap of GaAsN is found at significantly higher energies than those predicted by the BAC model using the commonly accepted nitrogen coupling parameter CNM=2.7eV. To account, within the BAC framework, for the apparent deceleration in the band-gap reduction rate requires the use of a smaller coupling constant (CNM=2.0eV), which suggests a weakening of the strength of the interaction between the localized nitrogen state and the conduction band of the host matrix. This observation seems to be associated with the increasing population of N-related defects.

  13. Ferromagnetism of magnetic impurities coupled indirectly via conduction electrons: Insights from various theoretical approaches

    NASA Astrophysics Data System (ADS)

    Titvinidze, Irakli; Schwabe, Andrej; Potthoff, Michael

    2014-07-01

    The magnetic ground-state properties of the periodic Anderson model with a regular depletion of the correlated sites are analyzed within different theoretical approaches. We consider the model on the one-dimensional chain and on the two-dimensional square lattice with hopping between nearest neighbors. At half-filling and with correlated impurities present at every second site, the depleted Anderson lattice is the most simple system where the indirect magnetic coupling mediated by the conduction electrons is ferromagnetic. We discuss the underlying electronic structure and the possible mechanisms that result in ferromagnetic long-range order. To this end, different numerical and analytical concepts are applied to the depleted Anderson and also to the related depleted Kondo lattice and are contrasted with each other. This includes numerical approaches, i.e., Hartree-Fock theory, density-matrix renormalization and dynamical mean-field theory, as well as analytical concepts, namely a variant of the Lieb-Mattis theorem and the concept of flat-band ferromagnetism, and, finally, perturbative approaches, i.e., the effective RKKY exchange in the limit of weak coupling and the "inverse indirect magnetic exchange" in the limit of strong coupling between the conduction band and the impurities.

  14. Band parameters of InGaAs/GaAs quantum dots: electronic properties study

    NASA Astrophysics Data System (ADS)

    Yahyaoui, M.; Sellami, K.; Boujdaria, K.; Chamarro, M.; Testelin, C.

    2013-12-01

    We have made a systematic investigation of the band diagram calculation of strained and unstrained InxGa1 - xAs alloys in order to extract accurate and adapted parameters which are useful to the electronic properties of InxGa1 - xAs/GaAs quantum dots. As an application, the 40-band k.p model is used to describe the band offsets as well as the band parameters in the strained InxGa1 - xAs/GaAs system. The κ valence band parameter as well as g* Landé factor depending of the indium concentration were estimated. These results are analyzed and compared with experiment.

  15. Meissner Effect of Dirac Electrons in Superconducting State Due to Inter-Band Effect

    NASA Astrophysics Data System (ADS)

    Mizoguchi, Tomonari; Ogata, Masao

    2015-08-01

    Dirac electrons in solids show characteristic physical properties due to their linear dispersion relation and two-band nature. Although the transport phenomena of Dirac electrons in a normal state have intensively been studied, the transport phenomena in a superconducting state have not been fully understood. In particular, it is not clear whether Dirac electrons in a superconducting state show Meissner effect (ME), since a diamagnetic term of a current operator is absent as a result of the linear dispersion. We investigate the ME of three dimensional massive Dirac electrons in a superconducting state on the basis of Kubo formula, and clarify that Meissner kernel becomes finite by use of the inter-band contribution. This mechanism of the ME for Dirac electrons is completely different from that for the electrons in usual metals. Our result shows that the Meissner kernel remains finite even when the superconducting gap vanishes. This is an unavoidable problem in the Dirac electron system as reported in the previous works. Thus, we use a prescription in which we subtract the normal state contribution. In order to justify this prescription, we develop a specific model where the Meissner kernel is obtained by the prescription. We also derive the result for the electron gas by taking the non-relativistic limit of Dirac Hamiltonian, and clarify that the diamagnetic term of the Meissner kernel can be regarded as the inter-band contribution between electrons and positrons in terms of the Dirac model.

  16. Tuning two-dimensional band structure of Cu(111) surface-state electrons that interplay with artificial supramolecular architectures

    NASA Astrophysics Data System (ADS)

    Wang, Shiyong; Wang, Weihua; Tan, Liang Z.; Li, Xing Guang; Shi, Zilang; Kuang, Guowen; Liu, Pei Nian; Louie, Steven G.; Lin, Nian

    2013-12-01

    We report on the modulation of two-dimensional (2D) bands of Cu(111) surface-state electrons by three isostructural supramolecular honeycomb architectures with different periodicity or constituent molecules. Using Fourier-transformed scanning tunneling spectroscopy and model calculations, we resolved the 2D band structures and found that the intrinsic surface-state band is split into discrete bands. The band characteristics including band gap, band bottom, and bandwidth are controlled by the network unit cell size and the nature of the molecule-surface interaction. In particular, Dirac cones emerge where the second and third bands meet at the K points of the Brillouin zone of the supramolecular lattice.

  17. Ag-graphene hybrid conductive ink for writing electronics.

    PubMed

    Xu, L Y; Yang, G Y; Jing, H Y; Wei, J; Han, Y D

    2014-02-01

    With the aim of preparing a method for the writing of electronics on paper by the use of common commercial rollerball pens loaded with conductive ink, hybrid conductive ink composed of Ag nanoparticles (15 wt%) and graphene-Ag composite nanosheets (0.15 wt%) formed by depositing Ag nanoparticles (∼10 nm) onto graphene sheets was prepared for the first time. Owing to the electrical pathway effect of graphene and the decreased contact resistance of graphene junctions by depositing Ag nanoparticles (NPs) onto graphene sheets, the concentration of Ag NPs was significantly reduced while maintaining high conductivity at a curing temperature of 100 ° C. A typical resistivity value measured was 1.9 × 10(-7) Ω m, which is 12 times the value for bulk silver. Even over thousands of bending cycles or rolling, the resistance values of writing tracks only increase slightly. The stability and flexibility of the writing circuits are good, demonstrating the promising future of this hybrid ink and direct writing method. PMID:24406681

  18. Ag-graphene hybrid conductive ink for writing electronics

    NASA Astrophysics Data System (ADS)

    Xu, L. Y.; Yang, G. Y.; Jing, H. Y.; Wei, J.; Han, Y. D.

    2014-02-01

    With the aim of preparing a method for the writing of electronics on paper by the use of common commercial rollerball pens loaded with conductive ink, hybrid conductive ink composed of Ag nanoparticles (15 wt%) and graphene-Ag composite nanosheets (0.15 wt%) formed by depositing Ag nanoparticles (˜10 nm) onto graphene sheets was prepared for the first time. Owing to the electrical pathway effect of graphene and the decreased contact resistance of graphene junctions by depositing Ag nanoparticles (NPs) onto graphene sheets, the concentration of Ag NPs was significantly reduced while maintaining high conductivity at a curing temperature of 100 ° C. A typical resistivity value measured was 1.9 × 10-7 Ω m, which is 12 times the value for bulk silver. Even over thousands of bending cycles or rolling, the resistance values of writing tracks only increase slightly. The stability and flexibility of the writing circuits are good, demonstrating the promising future of this hybrid ink and direct writing method.

  19. Engineering the electronic structure and band gap of boron nitride nanoribbon via external electric field

    NASA Astrophysics Data System (ADS)

    Chegel, Raad

    2016-06-01

    By using the third nearest neighbor modified tight binding (3NN-TB) method, the electronic structure and band gap of BNNRs under transverse electric fields are explored. The band gap of the BNNRs has a decreasing with increasing the intensity of the applied electric field, independent on the ribbon edge types. Furthermore, an analytic model for the dependence of the band gap in armchair and zigzag BNNRs on the electric field is proposed. The reduction of E g is similar for some N a armchair and N z zigzag BNNRs independent of their edges.

  20. Application of Superconducting Hot-Electron Bolometer Mixers for Terahertz-Band Astronomy

    NASA Astrophysics Data System (ADS)

    Maezawa, Hiroyuki

    2015-03-01

    Recently, a next-generation heterodyne mixer detector - a hot electron bolometer (HEB) mixer employing a superconducting microbridge - has gradually opened up terahertz-band astronomy. The surrounding state-of-the-art technologies including fabrication processes, 4 K cryostats, cryogenic low-noise amplifiers, local oscillator sources, micromachining techniques, and spectrometers, as well as the HEB mixers, have played a valuable role in the development of super-low-noise heterodyne spectroscopy systems for the terahertz band. The current developmental status of terahertz-band HEB mixer receivers and their applications for spectroscopy and astronomy with ground-based, airborne, and satellite telescopes are presented.

  1. Spatially resolved band alignments at Au-hexadecanethiol monolayer-GaAs(001) interfaces by ballistic electron emission microscopy

    SciTech Connect

    Junay, A.; Guézo, S. Turban, P.; Delhaye, G.; Lépine, B.; Tricot, S.; Ababou-Girard, S.; Solal, F.

    2015-08-28

    We study structural and electronic inhomogeneities in Metal—Organic Molecular monoLayer (OML)—semiconductor interfaces at the sub-nanometer scale by means of in situ Ballistic Electron Emission Microscopy (BEEM). BEEM imaging of Au/1-hexadecanethiols/GaAs(001) heterostructures reveals the evolution of pinholes density as a function of the thickness of the metallic top-contact. Using BEEM in spectroscopic mode in non-short-circuited areas, local electronic fingerprints (barrier height values and corresponding spectral weights) reveal a low-energy tunneling regime through the insulating organic monolayer. At higher energies, BEEM evidences new conduction channels, associated with hot-electron injection in the empty molecular orbitals of the OML. Corresponding band diagrams at buried interfaces can be thus locally described. The energy position of GaAs conduction band minimum in the heterostructure is observed to evolve as a function of the thickness of the deposited metal, and coherently with size-dependent electrostatic effects under the molecular patches. Such BEEM analysis provides a quantitative diagnosis on metallic top-contact formation on organic molecular monolayer and appears as a relevant characterization for its optimization.

  2. Thermal Conductivity of the Iron-Based Superconductor FeSe: Nodeless Gap with a Strong Two-Band Character.

    PubMed

    Bourgeois-Hope, P; Chi, S; Bonn, D A; Liang, R; Hardy, W N; Wolf, T; Meingast, C; Doiron-Leyraud, N; Taillefer, Louis

    2016-08-26

    The thermal conductivity κ of the iron-based superconductor FeSe was measured at temperatures down to 75 mK in magnetic fields up to 17 T. In a zero magnetic field, the electronic residual linear term in the T=0  K limit, κ_{0}/T, is vanishingly small. The application of a magnetic field B causes an exponential increase in κ_{0}/T initially. Those two observations show that there are no zero-energy quasiparticles that carry heat and therefore no nodes in the superconducting gap of FeSe. The full field dependence of κ_{0}/T has the classic two-step shape of a two-band superconductor: a first rise at very low field, with a characteristic field B^{⋆}≪B_{c2}, and then a second rise up to the upper critical field B_{c2}. This shows that the superconducting gap is very small (but finite) on one of the pockets in the Fermi surface of FeSe. We estimate that the minimum value of the gap, Δ_{min}, is an order of magnitude smaller than the maximum value, Δ_{max}. PMID:27610878

  3. Coexisting Honeycomb and Kagome Characteristics in the Electronic Band Structure of Molecular Graphene.

    PubMed

    Paavilainen, Sami; Ropo, Matti; Nieminen, Jouko; Akola, Jaakko; Räsänen, Esa

    2016-06-01

    We uncover the electronic structure of molecular graphene produced by adsorbed CO molecules on a copper (111) surface by means of first-principles calculations. Our results show that the band structure is fundamentally different from that of conventional graphene, and the unique features of the electronic states arise from coexisting honeycomb and Kagome symmetries. Furthermore, the Dirac cone does not appear at the K-point but at the Γ-point in the reciprocal space and is accompanied by a third, almost flat band. Calculations of the surface structure with Kekulé distortion show a gap opening at the Dirac point in agreement with experiments. Simple tight-binding models are used to support the first-principles results and to explain the physical characteristics behind the electronic band structures. PMID:27176628

  4. Surface-plasmon enhanced photodetection at communication band based on hot electrons

    NASA Astrophysics Data System (ADS)

    Wu, Kai; Zhan, Yaohui; Wu, Shaolong; Deng, Jiajia; Li, Xiaofeng

    2015-08-01

    Surface plasmons can squeeze light into a deep-subwavelength space and generate abundant hot electrons in the nearby metallic regions, enabling a new paradigm of photoconversion by the way of hot electron collection. Unlike the visible spectral range concerned in previous literatures, we focus on the communication band and design the infrared hot-electron photodetectors with plasmonic metal-insulator-metal configuration by using full-wave finite-element method. Titanium dioxide-silver Schottky interface is employed to boost the low-energy infrared photodetection. The photodetection sensitivity is strongly improved by enhancing the plasmonic excitation from a rationally engineered metallic grating, which enables a strong unidirectional photocurrent. With a five-step electrical simulation, the optimized device exhibits an unbiased responsivity of ˜0.1 mA/W and an ultra-narrow response band (FWHM = 4.66 meV), which promises to be a candidate as the compact photodetector operating in communication band.

  5. Electronic structure and optical properties of Cs2HgI4: Experimental study and band-structure DFT calculations

    NASA Astrophysics Data System (ADS)

    Lavrentyev, A. A.; Gabrelian, B. V.; Vu, V. T.; Shkumat, P. N.; Myronchuk, G. L.; Khvyshchun, M.; Fedorchuk, A. O.; Parasyuk, O. V.; Khyzhun, O. Y.

    2015-04-01

    High-quality single crystal of cesium mercury tetraiodide, Cs2HgI4, has been synthesized by the vertical Bridgman-Stockbarger method and its crystal structure has been refined. In addition, electronic structure and optical properties of Cs2HgI4 have been studied. For the crystal under study, X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated surfaces have been measured. The present X-ray photoelectron spectroscopy (XPS) results indicate that the Cs2HgI4 single crystal surface is very sensitive with respect to Ar+ ion-irradiation. In particular, Ar+ bombardment of the single crystal surface alters the elemental stoichiometry of the Cs2HgI4 surface. To elucidate peculiarities of the energy distribution of the electronic states within the valence-band and conduction-band regions of the Cs2HgI4 compound, we have performed first-principles band-structure calculations based on density functional theory (DFT) as incorporated in the WIEN2k package. Total and partial densities of states for Cs2HgI4 have been calculated. The DFT calculations reveal that the I p states make the major contributions in the upper portion of the valence band, while the Hg d, Cs p and I s states are the dominant contributors in its lower portion. Temperature dependence of the light absorption coefficient and specific electrical conductivity has been explored for Cs2HgI4 in the temperature range of 77-300 K. Main optical characteristics of the Cs2HgI4 compound have been elucidated by the first-principles calculations.

  6. Topological Metal of NaBi with Ultralow Lattice Thermal Conductivity and Electron-phonon Superconductivity

    PubMed Central

    Li, Ronghan; Cheng, Xiyue; Xie, Qing; Sun, Yan; Li, Dianzhong; Li, Yiyi; Chen, Xing-Qiu

    2015-01-01

    By means of first-principles and ab initio tight-binding calculations, we found that the compound of NaBi is a three-dimensional non-trivial topological metal. Its topological feature can be confirmed by the presence of band inversion, the derived effective Z2 invariant and the non-trivial surface states with the presence of Dirac cones. Interestingly, our calculations further demonstrated that NaBi exhibits the uniquely combined properties between the electron-phonon coupling superconductivity in nice agreement with recent experimental measurements and the obviously anisotropic but extremely low thermal conductivity. The spin-orbit coupling effects greatly affect those properties. NaBi may provide a rich platform to study the relationship among metal, topology, superconductivity and thermal conductivity. PMID:25676863

  7. Experimental and theoretical investigation of the conduction band edge of GaNxP1-x

    NASA Astrophysics Data System (ADS)

    Güngerich, M.; Klar, P. J.; Heimbrodt, W.; Weiser, G.; Geisz, J. F.; Harris, C.; Lindsay, A.; O'Reilly, E. P.

    2006-12-01

    We show that a two-level band-anticrossing (BAC) model fails to describe the evolution of N-related states in GaNxP1-x . Band structure calculations prove that a two-level model describes these states in ordered GaNP supercells. Photocurrent measurements support a BAC-related blueshift of the GaP-like direct band gap in disordered GaNP, but calculations and electromodulated absorption and pressure studies show that the wide energy distribution of the lower-lying N-related states leads to the anticrossing interaction involving many N levels in disordered GaNP.

  8. Measurements of the electronic transition moments of C2-band systems

    NASA Technical Reports Server (NTRS)

    Cooper, D. M.; Nicholls, R. W.

    1975-01-01

    Electronic transition moments of seven C2 singlet and triplet band systems, which are in the 0.2 to 1.2 micron spectral region, have been measured. The measurements were made in emission behind incident shock waves in C2H2-argon mixtures. Narrow band-pass radiometers were used to obtain absolute measurements of shock-excited C2 radiation from which absolute electronic transition moments are derived by a synthetic spectrum analysis. New results are reported for the Ballik-Ramsay, Phillips, Swan, Deslandres-d'Azambuja, Fox-Herzberg, Mulliken, and Freymark systems.

  9. Use and safety of conducted electronic devices: what is known?

    PubMed

    Nugent, K; Cevik, C

    2013-06-01

    Conductive electronic devices (CED), such as Taser and stun guns, are sold worldwide for use by security services, although they have also been used for self-defence and even for torture. CED are promoted as non-lethal weapons which can potentially save lives. However, there are multiple reports of deaths temporally associated with CED use. These weapons have definite physiological effects in normal volunteers, especially when accompanied by exertion. Medical examiners often report that deaths followed physical encounters which included the use of CED were due to natural causes, excited delirium and/or drug intoxication. These cases present complex situations in which multiple factors potentially contribute to the death, including electric shocks which cause neuromuscular incapacitation, severe pain and anxiety. Public health officials, physicians and hospital personnel need to be aware that individuals controlled with CED are at increased risk of death. We need better recording of incidents worldwide to understand the extent and outcomes of CED use. PMID:24975188

  10. Intense laser field and conduction band-edge nonparabolicity effects on hydrogenic impurity states of InGaN QW

    NASA Astrophysics Data System (ADS)

    El Ghazi, Haddou

    2015-09-01

    In this paper, hydrogenic impurity ground-state binding energy in unstrained wurtzite (In, Ga)N symmetric quantum well is investigated. The heterostructure is considered under the action of an intense laser field (ILF) incorporating an additional internal probe as well as the conduction band-edge nonparabolicity effect (CBENP). The variational approach is used within the framework of single band effective-mass approximation with two-parametric 1S-hydrogenic trial wavefunction. The competition effect between internal and external perturbations is also shown. Our results reveal that the binding energy is the largest for the well width around the effective Bohr radius and is strongly influenced by both parameters. Moreover, the principle effect of ILF (CBENP) is to reduce (enhance) the binding energy. It is found that the lift of the conduction band-edge can be easily eliminated by adjusting the ILF-parameter.

  11. Band offsets of n-type electron-selective contacts on cuprous oxide (Cu{sub 2}O) for photovoltaics

    SciTech Connect

    Brandt, Riley E. E-mail: buonassisi@mit.edu; Lee, Yun Seog; Buonassisi, Tonio E-mail: buonassisi@mit.edu; Young, Matthew; Dameron, Arrelaine; Teeter, Glenn; Park, Helen Hejin; Chua, Danny; Gordon, Roy G.

    2014-12-29

    The development of cuprous oxide (Cu{sub 2}O) photovoltaics (PVs) is limited by low device open-circuit voltages. A strong contributing factor to this underperformance is the conduction-band offset between Cu{sub 2}O and its n-type heterojunction partner or electron-selective contact. In the present work, a broad range of possible n-type materials is surveyed, including ZnO, ZnS, Zn(O,S), (Mg,Zn)O, TiO{sub 2}, CdS, and Ga{sub 2}O{sub 3}. Band offsets are determined through X-ray photoelectron spectroscopy and optical bandgap measurements. A majority of these materials is identified as having a negative conduction-band offset with respect to Cu{sub 2}O; the detrimental impact of this on open-circuit voltage (V{sub OC}) is evaluated through 1-D device simulation. These results suggest that doping density of the n-type material is important as well, and that a poorly optimized heterojunction can easily mask changes in bulk minority carrier lifetime. Promising heterojunction candidates identified here include Zn(O,S) with [S]/[Zn] ratios >70%, and Ga{sub 2}O{sub 3}, which both demonstrate slightly positive conduction-band offsets and high V{sub OC} potential. This experimental protocol and modeling may be generalized to evaluate the efficiency potential of candidate heterojunction partners for other PV absorbers, and the materials identified herein may be promising for other absorbers with low electron affinities.

  12. Electron pairing in the presence of incipient bands in iron-based superconductors

    NASA Astrophysics Data System (ADS)

    Chen, Xiao; Maiti, S.; Linscheid, A.; Hirschfeld, P. J.

    2015-12-01

    Recent experiments on certain Fe-based superconductors have hinted at a role for paired electrons in "incipient" bands that are close to, but do not cross, the Fermi level. Related theoretical works disagree on whether or not strong-coupling superconductivity is required to explain such effects, and whether a critical interaction strength exists. In this work, we consider various versions of the model problem of pairing of electrons in the presence of an incipient band, within a simple multiband weak-coupling BCS approximation. We categorize the problem into two cases: case (i), where superconductivity arises from the "incipient band pairing" alone, and case (ii), where it is induced on an incipient band by pairing due to Fermi-surface-based interactions. Negative conclusions regarding the importance of incipient bands have been drawn so far largely based on case (i), but we show explicitly that models under case (ii) are qualitatively different, and can explain the nonexponential suppression of Tc, as well as robust large gaps on an incipient band. In the latter situation, large gaps on the incipient band do not require a critical interaction strength. We also model the interplay between phonon and spin fluctuation driven superconductivity and describe situations in which they can enhance each other rather than compete. Finally, we discuss the effect of the dimensionality of the incipient band on our results. We argue that pairing on incipient bands may be significant and important in several Fe-based materials, including LiFeAs, FeSe intercalates, and FeSe monolayers on strontium titanate, and indeed may contribute to high critical temperatures in some cases.

  13. The MT inversion for conductivity anisotropy and EDA precursor, stress field and deformation band in the Earth's deep crust

    NASA Astrophysics Data System (ADS)

    Lin, Chang-You; Yang, Chang-Fu; Wu, Yu-Xia; Chen, Jun-Ying

    1996-08-01

    The conductivity anisotropy behaviour is described for certain environment in the Earth’s crust and the MT inversion method for a layered symmetrically anisotropic model is presented. The inversion interpretations of the anisotropic model from the observational data are helpful to identify the earthquake precusors as indicated by the deep conductivity anisotropic variations, and also provide some useful information to investigate the stress states and deformation bands in the deep crust of the Earth.

  14. Band or Polaron: The Hole Conduction Mechanism in the p-Type Spinel Rh 2ZnO4

    SciTech Connect

    Nagaraja, A. R.; Perry, N. H.; Mason, T. O.; Tang, Y.; Grayson, M.; Paudel, T. R.; Lany, S.; Zunger, A.

    2012-01-01

    Given the emerging role of oxide spinels as hole conductors, we discuss in this article the traditional vs. new methodologies of determining the type of conduction mechanism at play - localized polaronic vs. band-like transport. Applying (i) traditional small polaron analysis to our in-situ high temperature four-point conductivity and thermopower measurements, we previously found an activated mobility, which is indicative of the small polaron mechanism. However, (ii) employing the recent developments in correcting density functional methodologies for hole localization, we predict that the self-trapped hole is unstable and that Rh{sub 2}ZnO{sub 4} is instead a band conductor with a large effective mass. The hole mobility measured by high-field room temperature Hall effect also suggests band rather than polaron conduction. The apparent contradiction between the conclusion of the traditional procedure (i) and first-principles theory (ii) is resolved by taking into account in the previous transport analysis the temperature dependence of the effective density of states, which leads to the result that the mobility is actually temperature-independent in Rh{sub 2}ZnO{sub 4}. Our case study on Rh{sub 2}ZnO{sub 4} illustrates the range of experimental and theoretical approaches at hand to determine whether the transport mechanism of a semiconductor is band or small polaron conduction.

  15. Band or polaron: The hole conduction mechanism in the p-type spinel Rh2ZnO4

    SciTech Connect

    Nagaraja, Arpun R.; Perry, Nicola H.; Mason, Thomas O.; Tang, Yang; Grayson, Matthew; Paudel, Tula; Lany, Stephan; Zunger, Alex

    2011-08-05

    Given the emerging role of oxide spinels as hole conductors, we discuss in this article the traditional vs. new methodologies of determining the type of conduction mechanism at play––localized polaronic vs. band-like transport. Applying (i) traditional small polaron analysis to our in-situ high temperature four-point conductivity and thermopower measurements, we previously found an activated mobility, which is indicative of the small polaron mechanism. However, (ii) employing the recent developments in correcting density functional methodologies for hole localization, we predict that the self-trapped hole is unstable and that Rh₂ZnO₄ is instead a band conductor with a large effective mass. The hole mobility measured by high-field room temperature Hall effect also suggests band rather than polaron conduction. The apparent contradiction between the conclusion of the traditional procedure (i) and first-principles theory (ii) is resolved by taking into account in the previous transport analysis the temperature dependence of the effective density of states, which leads to the result that the mobility is actually temperature-independent in Rh₂ZnO₄. Our case study on Rh₂ZnO₄ illustrates the range of experimental and theoretical approaches at hand to determine whether the transport mechanism of a semiconductor is band or small polaron conduction.

  16. Contrasting 1D tunnel-structured and 2D layered polymorphs of V2O5: relating crystal structure and bonding to band gaps and electronic structure.

    PubMed

    Tolhurst, Thomas M; Leedahl, Brett; Andrews, Justin L; Marley, Peter M; Banerjee, Sarbajit; Moewes, Alexander

    2016-06-21

    New V2O5 polymorphs have risen to prominence as a result of their open framework structures, cation intercalation properties, tunable electronic structures, and wide range of applications. The application of these materials and the design of new, useful polymorphs requires understanding their defining structure-property relationships. We present a characterization of the band gap and electronic structure of nanowires of the novel ζ-phase and the orthorhombic α-phase of V2O5 using X-ray spectroscopy and density functional theory calculations. The band gap is found to decrease from 1.90 ± 0.20 eV in the α-phase to 1.50 ± 0.20 eV in the ζ-phase, accompanied by the loss of the α-phase's characteristic split-off dxy band in the ζ-phase. States of dxy origin continue to dominate the conduction band edge in the new polymorph but the inequivalence of the vanadium atoms and the increased local symmetry of [VO6] octahedra results in these states overlapping with the rest of the V 3d conduction band. ζ-V2O5 exhibits anisotropic conductivity along the b direction, defining a 1D tunnel, in contrast to α-V2O5 where the anisotropic conductivity is along the ab layers. We explain the structural origins of the differences in electronic properties that exist between the α- and ζ-phase. PMID:27230816

  17. A microscopic two-band model for the electron-hole asymmetry in high-Tc superconductors and reentering behavior

    NASA Astrophysics Data System (ADS)

    Bru, J.-B.; Pedra, W. de Siqueira; Dömel, A.-S.

    2011-07-01

    To our knowledge there is no rigorously analyzed microscopic model explaining the electron-hole asymmetry of the critical temperature seen in high-Tc cuprate superconductors - at least no model not breaking artificially this symmetry. We present here a microscopic two-band model based on the structure of energetic levels of holes in CuO2 conducting layers of cuprates. In particular, our Hamiltonian does not contain ad hoc terms implying - explicitly - different masses for electrons and holes. We prove that two energetically near-lying interacting bands can explain the electron-hole asymmetry. Indeed, we rigorously analyze the phase diagram of the model and show that the critical temperatures for fermion densities below half-filling can manifest a very different behavior as compared to the case of densities above half-filling. This fact results from the inter-band interaction and intra-band Coulomb repulsion in interplay with thermal fluctuations between two energetic levels. So, if the energy difference between bands is too big (as compared to the energy scale defined by the critical temperatures of superconductivity) then the asymmetry disappears. Moreover, the critical temperature turns out to be a non-monotonic function of the fermion density and the phase diagram of our model shows "superconducting domes" as in high-Tc cuprate superconductors. This explains why the maximal critical temperature is attained at donor densities away from the maximal one. Outside the superconducting phase and for fermion densities near half-filling the thermodynamics governed by our Hamiltonian corresponds, as in real high-Tc materials, to a Mott-insulating phase. The nature of the inter-band interaction can be electrostatic (screened Coulomb interaction), magnetic (for instance, some Heisenberg-type one-site spin-spin interaction), or a mixture of both. If the inter-band interaction is predominately magnetic then - additionally to the electron-hole asymmetry - we observe a

  18. Vanishing electronic energy loss of very slow light ions in insulators with large band gaps.

    PubMed

    Markin, S N; Primetzhofer, D; Bauer, P

    2009-09-11

    Electronic energy loss of light ions in nanometer films of materials with large band gaps has been studied for very low velocities. For LiF, a threshold velocity is observed at 0.1 a.u. (250 eV/u), below which the ions move without transferring energy to the electronic system. For KCl, a lower (extrapolated) threshold velocity is found, identical for H and He ions. For SiO2, no clear velocity threshold is observed for He particles. For protons and deuterons, electronic stopping is found to perfectly fulfill velocity scaling, as expected for binary ion-electron interaction. PMID:19792368

  19. Vanishing Electronic Energy Loss of Very Slow Light Ions in Insulators with Large Band Gaps

    SciTech Connect

    Markin, S. N.; Primetzhofer, D.; Bauer, P.

    2009-09-11

    Electronic energy loss of light ions in nanometer films of materials with large band gaps has been studied for very low velocities. For LiF, a threshold velocity is observed at 0.1 a.u. (250 eV/u), below which the ions move without transferring energy to the electronic system. For KCl, a lower (extrapolated) threshold velocity is found, identical for H and He ions. For SiO{sub 2}, no clear velocity threshold is observed for He particles. For protons and deuterons, electronic stopping is found to perfectly fulfill velocity scaling, as expected for binary ion-electron interaction.

  20. Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State.

    PubMed

    Lim, A; Foulkes, W M C; Horsfield, A P; Mason, D R; Schleife, A; Draeger, E W; Correa, A A

    2016-01-29

    We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. An analysis of the time dependence of the transition rates using coupled linear rate equations enables one of the excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap. PMID:26871327

  1. Temperature Dependence of Band Gaps in Semiconductors: Electron-Phonon Interaction

    NASA Astrophysics Data System (ADS)

    Bhosale, J. S.; Ramdas, A. K.; Burger, A.; Muñoz, A.; Romero, A. H.; Cardona, M.; Lauck, R.; Kremer, R. K.

    2013-03-01

    A theoretical investigation with ab initio techniques of the electron-phonon interaction of semiconductors with chalcopyrite structure and its comparison with modulated reflectivity experiments yield a striking difference between those with (AgGaS2) and without (ZnSnAs2) d electrons in their valence bands. The former exhibit a non-monotonic temperature dependence of the band gaps whose origin is not yet fully understood. The analysis of this temperature dependence with the Bose-Einstein oscillator model[1] involving two oscillator terms having weights of opposite signs, provides an excellent agreement with the experimental data and correlates well with the characteristic peaks in the phonon density of states associated with the acoustical phonon modes. This work underscores the need for theoretical understanding of the electron-phonon interaction involving d electrons, particularly in ab initio investigations.

  2. Band gap bowing and electron localization of (GaxIn1-x)N

    SciTech Connect

    Lee, Byounghak; Wang, Lin-Wang

    2006-05-09

    The band gap bowing and the electron localization ofGaxIn1-xN are calculated using both the local density approximation (LDA)and screened-exchange local density functional (sX-LDA) methods. Thecalculated sX-LDA band gaps are in good agreement with the experimentallyobserved values, with errors of -0.26 and 0.09 eV for bulk GaN and InN,respectively. The LDA band gap errors are 1.33 and 0.81 eV for GaN andInN, in order. In contrast to the gap itself, the band gap bowingparameter is found to be very similar in sX-LDA and LDA. We identify thelocalization of hole states in GaxIn1-xN alloys along In-N-In chains. Thepredicted localizationis stronger in sX-LDA.

  3. Electronic band structure trends of perovskite halides: Beyond Pb and Sn to Ge and Si

    NASA Astrophysics Data System (ADS)

    Huang, Ling-yi; Lambrecht, Walter R. L.

    2016-05-01

    The trends in electronic band structure are studied in the cubic A B X3 halide perovskites for A =Cs ; B =Pb , Sn, Ge, Si; and X =I , Br, Cl. The gaps are found to decrease from Pb to Sn and from Ge to Si, but increase from Sn to Ge. The trend is explained in terms of the atom s levels of the group-IV element and the atomic sizes which changes the amount of hybridization with X -p and hence the valence bandwidth. Along the same series spin-orbit coupling also decreases and this tends to increase the gap because of the smaller splitting of the conduction band minimum. Both effects compensate each other to a certain degree. The trend with halogens is to reduce the gap from Cl to I, i.e., with decreasing electronegativity. The role of the tolerance factor in avoiding octahedron rotations and octahedron edge sharing is discussed. The Ge containing compounds have tolerance factor t >1 and hence do not show the series of octahedral rotation distortions and the existence of edge-sharing octahedral phases known for Pb and Sn-based compounds, but rather a rhombohedral distortion. CsGeI3 is found to have a suitable gap for photovoltaics both in its cubic (high-temperature) and rhombohedral (low-temperature) phases. The structural stability of the materials in the different phases is also discussed. We find the rhombohedral phase to have lower total energy and slightly larger gaps but to present a less significant distortion of the band structure than the edge-sharing octahedral phases, such as the yellow phase in CsSnI3. The corresponding silicon based compounds have not yet been synthesized and therefore our estimates are less certain but indicate a small gap for cubic CsSiI3 and CsSiBr3 of about 0.2 ±0.2 eV and 0.8 ±0.6 eV for CsSiCl3. The intrinsic stability of the Si compounds is discussed.

  4. Electron microscopy and x-ray diffraction evidence for two Z-band structural states.

    PubMed

    Perz-Edwards, Robert J; Reedy, Michael K

    2011-08-01

    In vertebrate muscles, Z-bands connect adjacent sarcomeres, incorporate several cell signaling proteins, and may act as strain sensors. Previous electron microscopy (EM) showed Z-bands reversibly switch between a relaxed, "small-square" structure, and an active, "basketweave" structure, but the mechanism of this transition is unknown. Here, we found the ratio of small-square to basketweave in relaxed rabbit psoas muscle varied with temperature, osmotic pressure, or ionic strength, independent of activation. By EM, the A-band and both Z-band lattice spacings varied with temperature and pressure, not ionic strength; however, the basketweave spacing was consistently 10% larger than small-square. We next sought evidence for the two Z-band structures in unfixed muscles using x-ray diffraction, which indicated two Z-reflections whose intensity ratios and spacings correspond closely to the EM measurements for small-square and basketweave if the EM spacings are adjusted for 20% shrinkage due to EM processing. We conclude that the two Z-reflections arise from the small-square and basketweave forms of the Z-band as seen by EM. Regarding the mechanism of transition during activation, the effects of Ca(2+) in the presence of force inhibitors suggested that the interconversion of Z-band forms was correlated with tropomyosin movement on actin. PMID:21806939

  5. Band gap and electronic structure of MgSiN{sub 2}

    SciTech Connect

    Quirk, J. B. Råsander, M.; McGilvery, C. M.; Moram, M. A.; Palgrave, R.

    2014-09-15

    Density functional theory calculations and electron energy loss spectroscopy indicate that the electronic structure of ordered orthorhombic MgSiN{sub 2} is similar to that of wurtzite AlN. A band gap of 5.7 eV was calculated for both MgSiN{sub 2} (indirect) and AlN (direct) using the Heyd-Scuseria-Ernzerhof approximation. Correction with respect to the experimental room-temperature band gap of AlN indicates that the true band gap of MgSiN{sub 2} is 6.2 eV. MgSiN{sub 2} has an additional direct gap of 6.3 eV at the Γ point.

  6. Electron concentrations calculated from the lower hybrid resonance noise band observed by Ogo 3.

    NASA Technical Reports Server (NTRS)

    Burtis, W. J.

    1973-01-01

    A noise band at the lower hybrid resonance (LHR) is often detected by the VLF and ELF receivers on Ogo 3, using the electric antenna. In some cases the noise band is at the geometric mean gyrofrequency as measured by the Goddard Space Flight Center (GSFC) magnetometer, and local LHR in a dense H(+) plasma is indicated; in such cases, electron concentration can be calculated, if it is assumed that heavy ions are negligible. Observations at midlatitudes and altitudes of a few earth radii show local concentrations as low as 1.4 electrons/cu cm. In one case the concentrations obtained from the LHR noise band agree with those measured simultaneously by the GSFC ion mass spectrometer within a factor of 2. In another case the concentration is observed to fall by a factor of 2 in 150 km and then to decrease roughly as R to the minus fourth power, in agreement with whistler measurements outside the plasmapause.

  7. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

    DOE PAGESBeta

    Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; Hozumi, Hideaki; Gao, Yongqian; Eda, Goki; Mattevi, Cecilia; Fujita, Takeshi; Yoshigoe, Akitaka; Ishizuka, Shinji; et al

    2016-04-08

    We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a setmore » of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.« less

  8. Effect of boron localized states on the conduction band transport in B{sub x}Ga{sub 1−x}P

    SciTech Connect

    Petznick, S.; Ostheim, L. Klar, P. J.; Liebich, S.; Volz, K.; Stolz, W.

    2014-12-01

    We study the magnetotransport properties of an n-type (B,Ga)P:Te alloy and an n-type GaP:Te reference under hydrostatic pressure up to 17 kilobars in the temperature range from 1.5 to 300 K. The free carrier concentration and the mobility of the reference sample are almost independent of the applied hydrostatic pressure at room temperature. In contrast, the free carrier concentration as well as the mobility in the B{sub 0.012}Ga{sub 0.988}P:Te alloy increase by about 30% over the accessible pressure range. The observations are explained by assuming that a boron-related density of localized states exists in the vicinity of the conduction band edge of the alloy. These boron states act as electron traps as well as efficient scatter centers. Applying hydrostatic pressure shifts the energetic positions of conduction band edge at the X-point (where the electron transport takes place) and of the boron states apart reducing the impact of boron on the electronic transport properties of the alloy.

  9. Electron pairing in the presence of incipient bands in iron-based superconductors

    NASA Astrophysics Data System (ADS)

    Linscheid, Andy; Chen, Xiao; Maiti, Saurabh; Hirschfeld, Peter

    Recent experiments on certain Fe-based superconductors (SC) have hinted at a role for paired electrons in ``incipient'' bands that are close to, but do not cross the Fermi level. Within a simple multiband weak-coupling BCS approximation, we categorize the problem into two cases: case(I) where SC arises from the incipient band pairing alone, and case(II) where it is induced on an incipient band by pairing due to Fermi-surface based interactions. Negative conclusions regarding the importance of incipient bands are largely based on case(I). However, we show explicitly that models under case(II) can explain the mild suppression of Tc, as well as robust large gaps on an incipient band. We also model the interplay between phonon and spin fluctuation (SF) driven SC and describe the bootstrap of electron-phonon SC by SF coupling the incipient and the regular bands. We argue that pairing on incipient bands may be important in several Fe-based materials, including LiFeAs, FeSe intercalates and FeSe monolayers on SrTiO3, and indeed may contribute to high Tc in some cases. In addition, we address the question whether this conclusion holds if the SF interaction is derived explicitly in the incipient band scenario and retardation effects are included on the level of the Eliashberg equations. SM was supported by NHMFL through NSF-DMR-1157490, AL and PJH were supported in part by DOE DE-FG02-05ER46236.

  10. TiS3 nanoribbons: Width-independent band gap and strain-tunable electronic properties

    NASA Astrophysics Data System (ADS)

    Kang, Jun; Sahin, Hasan; Ozaydin, H. Duygu; Senger, R. Tugrul; Peeters, François M.

    2015-08-01

    The electronic properties, carrier mobility, and strain response of TiS3 nanoribbons (TiS3 NRs) are investigated by first-principles calculations. We found that the electronic properties of TiS3 NRs strongly depend on the edge type (a or b). All a-TiS3 NRs are metallic with a magnetic ground state, while b-TiS3 NRs are direct band gap semiconductors. Interestingly, the size of the band gap and the band edge position are almost independent of the ribbon width. This feature promises a constant band gap in a b-TiS3 NR with rough edges, where the ribbon width differs in different regions. The maximum carrier mobility of b-TiS3 NRs is calculated by using the deformation potential theory combined with the effective mass approximation and is found to be of the order 103cm2V-1s-1 . The hole mobility of the b-TiS3 NRs is one order of magnitude lower, but it is enhanced compared to the monolayer case due to the reduction in hole effective mass. The band gap and the band edge position of b-TiS3 NRs are quite sensitive to applied strain. In addition we investigate the termination of ribbon edges by hydrogen atoms. Upon edge passivation, the metallic and magnetic features of a-TiS3 NRs remain unchanged, while the band gap of b-TiS3 NRs is increased significantly. The robust metallic and ferromagnetic nature of a-TiS3 NRs is an essential feature for spintronic device applications. The direct, width-independent, and strain-tunable band gap, as well as the high carrier mobility, of b-TiS3 NRs is of potential importance in many fields of nanoelectronics, such as field-effect devices, optoelectronic applications, and strain sensors.

  11. Tuning the electronic band-gap of fluorinated 3C-silicon carbide nanowires

    NASA Astrophysics Data System (ADS)

    Miranda Durán, Álvaro; Trejo Baños, Alejandro; Pérez, Luis Antonio; Cruz Irisson, Miguel

    The possibility of control and modulation of the electronic properties of silicon carbide nanowires (SiCNWs) by varying the wire diameter is well known. SiCNWs are particularly interesting and technologically important, due to its electrical and mechanical properties, allowing the development of materials with specific electronic features for the design of stable and robust electronic devices. Tuning the band gap by chemical surface passivation constitutes a way for the modification of the electronic band gap of these nanowires. We present, the structural and electronic properties of fluorinated SiCNWs, grown along the [111] crystallographic direction, which are investigated by first principles. We consider nanowires with six diameters, varying from 0.35 nm to 2.13 nm, and eight random covering schemes including fully hydrogen- and fluorine terminated ones. Gibbs free energy of formation and electronic properties were calculated for the different surface functionalization schemes and diameters considered. The results indicate that the stability and band gap of SiCNWs can be tuned by surface passivation with fluorine atoms This work was supported by CONACYT infrastructure project 252749 and UNAM-DGAPA-PAPIIT IN106714. A.M. would like to thank for financial support from CONACyT-Retención. Computing resources from proyect SC15-1-IR-27 of DGTIC-UNAM are acknowledged.

  12. X-ray absorption and reflection as probes of the GaN conduction bands: Theory and experiments

    SciTech Connect

    Lambrecht, W.R.L.; Rashkeev, S.N.; Segall, B.

    1997-04-01

    X-ray absorption measurements are a well-known probe of the unoccupied states in a material. The same information can be obtained by using glancing angle X-ray reflectivity. In spite of several existing band structure calculations of the group III nitrides and previous optical studies in UV range, a direct probe of their conduction band densities of states is of interest. The authors performed a joint experimental and theoretical investigation using both of these experimental techniques for wurtzite GaN.

  13. The growth of n-type GaSb by metal-organic chemical vapor deposition : effects of two-band conduction on carrier concentrations and donor activation.

    SciTech Connect

    Cederberg, Jeffrey George; Biefeld, Robert Malcolm

    2003-06-01

    n-type GaSb has been prepared by metal-organic chemical vapour deposition with tellurium donors using diethyltelluride as the dopant precursor. The maximum carrier concentration achieved was 1.7 x 10{sup 18} cm{sup -3}, as measured by van der Pauw-Hall effect measurements, for an atomic tellurium concentration of 1.8 x 10{sup 19} cm{sup -3}. The apparent low activation of tellurium donors is explained by a model that considers the effect of electrons occupying both the {Lambda} and L bands in GaSb due to the small energy difference between the {Lambda} and L conduction band minima. The model also accounts for the apparent increase in the carrier concentration determined by van der Pauw-Hall effect measurements at cryogenic temperatures.

  14. Time-resolved observation of band-gap shrinking and electron-lattice thermalization within X-ray excited gallium arsenide

    PubMed Central

    Ziaja, Beata; Medvedev, Nikita; Tkachenko, Victor; Maltezopoulos, Theophilos; Wurth, Wilfried

    2015-01-01

    Femtosecond X-ray irradiation of solids excites energetic photoelectrons that thermalize on a timescale of a few hundred femtoseconds. The thermalized electrons exchange energy with the lattice and heat it up. Experiments with X-ray free-electron lasers have unveiled so far the details of the electronic thermalization. In this work we show that the data on transient optical reflectivity measured in GaAs irradiated with femtosecond X-ray pulses can be used to follow electron-lattice relaxation up to a few tens of picoseconds. With a dedicated theoretical framework, we explain the so far unexplained reflectivity overshooting as a result of band-gap shrinking. We also obtain predictions for a timescale of electron-lattice thermalization, initiated by conduction band electrons in the temperature regime of a few eVs. The conduction and valence band carriers were then strongly non-isothermal. The presented scheme is of general applicability and can stimulate further studies of relaxation within X-ray excited narrow band-gap semiconductors. PMID:26655671

  15. Time-resolved observation of band-gap shrinking and electron-lattice thermalization within X-ray excited gallium arsenide

    NASA Astrophysics Data System (ADS)

    Ziaja, Beata; Medvedev, Nikita; Tkachenko, Victor; Maltezopoulos, Theophilos; Wurth, Wilfried

    2015-12-01

    Femtosecond X-ray irradiation of solids excites energetic photoelectrons that thermalize on a timescale of a few hundred femtoseconds. The thermalized electrons exchange energy with the lattice and heat it up. Experiments with X-ray free-electron lasers have unveiled so far the details of the electronic thermalization. In this work we show that the data on transient optical reflectivity measured in GaAs irradiated with femtosecond X-ray pulses can be used to follow electron-lattice relaxation up to a few tens of picoseconds. With a dedicated theoretical framework, we explain the so far unexplained reflectivity overshooting as a result of band-gap shrinking. We also obtain predictions for a timescale of electron-lattice thermalization, initiated by conduction band electrons in the temperature regime of a few eVs. The conduction and valence band carriers were then strongly non-isothermal. The presented scheme is of general applicability and can stimulate further studies of relaxation within X-ray excited narrow band-gap semiconductors.

  16. Time-resolved observation of band-gap shrinking and electron-lattice thermalization within X-ray excited gallium arsenide.

    PubMed

    Ziaja, Beata; Medvedev, Nikita; Tkachenko, Victor; Maltezopoulos, Theophilos; Wurth, Wilfried

    2015-01-01

    Femtosecond X-ray irradiation of solids excites energetic photoelectrons that thermalize on a timescale of a few hundred femtoseconds. The thermalized electrons exchange energy with the lattice and heat it up. Experiments with X-ray free-electron lasers have unveiled so far the details of the electronic thermalization. In this work we show that the data on transient optical reflectivity measured in GaAs irradiated with femtosecond X-ray pulses can be used to follow electron-lattice relaxation up to a few tens of picoseconds. With a dedicated theoretical framework, we explain the so far unexplained reflectivity overshooting as a result of band-gap shrinking. We also obtain predictions for a timescale of electron-lattice thermalization, initiated by conduction band electrons in the temperature regime of a few eVs. The conduction and valence band carriers were then strongly non-isothermal. The presented scheme is of general applicability and can stimulate further studies of relaxation within X-ray excited narrow band-gap semiconductors. PMID:26655671

  17. A class of monolayer metal halogenides MX2: Electronic structures and band alignments

    NASA Astrophysics Data System (ADS)

    Lu, Feng; Wang, Weichao; Luo, Xiaoguang; Xie, Xinjian; Cheng, Yahui; Dong, Hong; Liu, Hui; Wang, Wei-Hua

    2016-03-01

    With systematic first principles calculations, a class of monolayer metal halogenides MX2 (M = Mg, Ca, Zn, Cd, Ge, Pb; M = Cl, Br, I) has been proposed. Our study indicates that these monolayer materials are semiconductors with the band gaps ranging from 2.03 eV of ZnI2 to 6.08 eV of MgCl2. Overall, the band gap increases with the increase of the electronegativity of the X atom or the atomic number of the metal M. Meanwhile, the band gaps of monolayer MgX2 (X = Cl, Br) are direct while those of other monolayers are indirect. Based on the band edge curvatures, the derived electron (me) and hole (mh) effective masses of MX2 monolayers are close to their corresponding bulk values except that the me of CdI2 is three times larger and the mh for PbI2 is twice larger. Finally, the band alignments of all the studied MX2 monolayers are provided using the vacuum level as energy reference. These theoretical results may not only introduce the monolayer metal halogenides family MX2 into the emerging two-dimensional materials, but also provide insights into the applications of MX2 in future electronic, visible and ultraviolet optoelectronic devices.

  18. Doping and strain dependence of the electronic band structure in Ge and GeSn alloys

    NASA Astrophysics Data System (ADS)

    Xu, Chi; Gallagher, James; Senaratne, Charutha; Brown, Christopher; Fernando, Nalin; Zollner, Stefan; Kouvetakis, John; Menendez, Jose

    2015-03-01

    A systematic study of the effect of dopants and strain on the electronic structure of Ge and GeSn alloys is presented. Samples were grown by UHV-CVD on Ge-buffered Si using Ge3H8 and SnD4 as the sources of Ge and Sn, and B2H6/P(GeH3)3 as dopants. High-energy critical points in the joint-density of electronic states were studied using spectroscopic ellipsometry, which yields detailed information on the strain and doping dependence of the so-called E1, E1 +Δ1 , E0' and E2 transitions. The corresponding dependencies of the lowest direct band gap E0 and the fundamental indirect band gap Eindwere studied via room-T photoluminescence spectroscopy. Of particular interest for this work were the determination of deformation potentials, band gap renormalization effects, Burstein-Moss shifts due to the presence of carriers at band minima, and the dependence of other critical point parameters, such as amplitudes and phase angles, on the doping concentration. The selective blocking of transitions due to high doping makes it possible to investigate the precise k-space location of critical points. These studies are complemented with detailed band-structure calculations within a full-zone k-dot- p approach. Supported by AFOSR under DOD AFOSR FA9550-12-1-0208 and DOD AFOSR FA9550-13-1-0022.

  19. Understanding the electronic band structure of Pt-alloys for surface reactivity

    NASA Astrophysics Data System (ADS)

    Jung, Jongkeun; Kim, Beomyoung; Hong, Ji Sook; Jin, Tae Won; Shim, Ji Hoon; Nemsak, Slavomir; Denlinger, Jonathan D.; Masashi, Arita; Kenya, Shimada; Kim, Changyoung; Mun, Bongjin Simon

    In polymer exchange membrane fuel cell (PEMFC), the oxygen reduction reaction (ORR) at cathode side has been continuously investigated due to its critical importance in performance of fuel cell. So far, even with best industrial catalyst made with Pt, the performance of ORR is too far below from the commercial purpose. In 2007, Stamenkovic et al. showed that Pt alloys with 3- dtransition metal exhibited significantly improved ORR performance and pointed out the altered electronic structure of surface as the major contributing factor for enhanced ORR. Since 1990, with the advance of DFT calculation, the trend of surface chemical reactivity is explained with the analysis of d-band structures, known as d-band model. While d-band provides valid insight on surface chemical reactivity based on the valence band DOS, the relation between surface work function and DOS has not been well understood. The element-specific local electronic band structure of Pt alloys are identified by ARPES measurement, and the correlation between surface work function and local charge density is investigated.

  20. Band-gap measurements of direct and indirect semiconductors using monochromated electrons

    SciTech Connect

    Gu Lin; Srot, Vesna; Sigle, Wilfried; Koch, Christoph; Aken, Peter van; Ruehle, Manfred; Scholz, Ferdinand; Thapa, Sarad B.; Kirchner, Christoph; Jetter, Michael

    2007-05-15

    With the development of monochromators for transmission electron microscopes, valence electron-energy-loss spectroscopy (VEELS) has become a powerful technique to study the band structure of materials with high spatial resolution. However, artifacts such as Cerenkov radiation pose a limit for interpretation of the low-loss spectra. In order to reveal the exact band-gap onset using the VEELS method, semiconductors with direct and indirect band-gap transitions have to be treated differently. For direct semiconductors, spectra acquired at thin regions can efficiently minimize the Cerenkov effects. Examples of hexagonal GaN (h-GaN) spectra acquired at different thickness showed that a correct band-gap onset value can be obtained for sample thicknesses up to 0.5 t/{lambda}. In addition, {omega}-q maps acquired at different specimen thicknesses confirm the thickness dependency of Cerenkov losses. For indirect semiconductors, the correct band-gap onset can be obtained in the dark-field mode when the required momentum transfer for indirect transition is satisfied. Dark-field VEEL spectroscopy using a star-shaped entrance aperture provides a way of removing Cerenkov effects in diffraction mode. Examples of Si spectra acquired by displacing the objective aperture revealed the exact indirect transition gap E{sub g} of 1.1 eV.

  1. Monoclinic Tungsten Oxide with {100} Facet Orientation and Tuned Electronic Band Structure for Enhanced Photocatalytic Oxidations.

    PubMed

    Zhang, Ning; Chen, Chen; Mei, Zongwei; Liu, Xiaohe; Qu, Xiaolei; Li, Yunxiang; Li, Siqi; Qi, Weihong; Zhang, Yuanjian; Ye, Jinhua; Roy, Vellaisamy A L; Ma, Renzhi

    2016-04-27

    Exploring surface-exposed highly active crystal facets for photocatalytic oxidations is promising in utilizing monoclinic WO3 semiconductor. However, the previously reported highly active facets for monoclinic WO3 were mainly toward enhancing photocatalytic reductions. Here we report that the WO3 with {100} facet orientation and tuned surface electronic band structure can effectively enhance photocatalytic oxidation properties. The {100} faceted WO3 single crystals are synthesized via a facile hydrothermal method. The UV-visible diffuse reflectance, X-ray photoelectron spectroscopy valence band spectra, and photoelectrochemical measurements suggest that the {100} faceted WO3 has a much higher energy level of valence band maximum compared with the normal WO3 crystals without preferred orientation of the crystal face. The density functional theory calculations reveal that the shift of O 2p and W 5d states in {100} face induce a unique band structure. In comparison with the normal WO3, the {100} faceted WO3 exhibits an O2 evolution rate about 5.1 times in water splitting, and also shows an acetone evolution rate of 4.2 times as well as CO2 evolution rate of 3.8 times in gaseous degradation of 2-propanol. This study demonstrates an efficient crystal face engineering route to tune the surface electronic band structure for enhanced photocatalytic oxidations. PMID:27045790

  2. Excitation of the ligand-to-metal charge transfer band induces electron tunnelling in azurin

    SciTech Connect

    Baldacchini, Chiara; Bizzarri, Anna Rita; Cannistraro, Salvatore

    2014-03-03

    Optical excitation of azurin blue copper protein immobilized on indium-tin oxide, in resonance with its ligand-to-metal charge transfer absorption band, resulted in a light-induced current tunnelling within the protein milieu. The related electron transport rate is estimated to be about 10{sup 5} s{sup −1}. A model based on resonant tunnelling through an azurin excited molecular state is proposed. The capability of controlling electron transfer processes through light pulses opens interesting perspectives for implementation of azurin in bio-nano-opto-electronic devices.

  3. Long-term drift induced by the electronic crosstalk in Terra MODIS Band 29

    NASA Astrophysics Data System (ADS)

    Sun, Junqiang; Madhavan, Sriharsha; Xiong, Xiaoxiong; Wang, Menghua

    2015-10-01

    Terra MODerate Resolution Imaging Spectroradiometer (MODIS) is one of the key sensors in the NASA's Earth Observing System, which has successfully completed 15 years of on-orbit operation. Terra MODIS continues to collect valuable information of the Earth's energy radiation from visible to thermal infrared wavelengths. The instrument has been well characterized over its lifetime using onboard calibrators whose calibration references are traceable to the National Institute of Standards and Technology standards. In this paper, we focus on the electronic crosstalk effect of Terra MODIS band 29, a thermal emissive band (TEB) whose center wavelength is 8.55 µm. Previous works have established the mechanism to describe the effect of the electronic crosstalk in the TEB channels of Terra MODIS. This work utilizes the established methodology to apply to band 29. The electronic crosstalk is identified and characterized using the regularly scheduled lunar observations. The moon being a near-pulse-like source allowed easy detection of extraneous signals around the actual Moon surface. First, the crosstalk-transmitting bands are identified along with their amplitudes. The crosstalk effect then is characterized using a moving average mechanism that allows a high fidelity of the magnitude to be corrected. The lunar-based analysis unambiguously shows that the crosstalk contamination is becoming more severe in recent years and should be corrected in order to maintain calibration quality for the affected spectral bands. Finally, two radiometrically well-characterized sites, Pacific Ocean and Libya 1 desert, are used to assess the impact of crosstalk effect. It is shown that the crosstalk contamination induces a long-term upward drift of 1.5 K in band 29 brightness temperature of MODIS Collection 6 L1B, which could significantly impact the science products. The crosstalk effect also induces strong detector-to-detector differences, which result in severe stripping in the Earth view

  4. Electronic structure descriptor for the discovery of narrow-band red-emitting phosphors

    DOE PAGESBeta

    Wang, Zhenbin; Chu, Iek -Heng; Zhou, Fei; Ong, Shyue Ping

    2016-05-09

    Narrow-band red-emitting phosphors are a critical component of phosphor-converted light-emitting diodes for highly efficient illumination-grade lighting. In this work, we report the discovery of a quantitative descriptor for narrow-band Eu2+-activated emission identified through a comparison of the electronic structures of known narrow-band and broad-band phosphors. We find that a narrow emission bandwidth is characterized by a large splitting of more than 0.1 eV between the two highest Eu2+ 4f7 bands. By incorporating this descriptor in a high-throughput first-principles screening of 2259 nitride compounds, we identify five promising new nitride hosts for Eu2+-activated red-emitting phosphors that are predicted to exhibit goodmore » chemical stability, thermal quenching resistance, and quantum efficiency, as well as narrow-band emission. Lastly, our findings provide important insights into the emission characteristics of rare-earth activators in phosphor hosts and a general strategy to the discovery of phosphors with a desired emission peak and bandwidth.« less

  5. Electronic band structure and optical properties of the cubic, Sc, Y and La hydride systems

    SciTech Connect

    Peterman, D.J.

    1980-01-01

    Electronic band structure calculations are used to interpret the optical spectra of the cubic Sc, Y and La hydride systems. Self-consistent band calculations of ScH/sub 2/ and YH/sub 2/ were carried out. The respective joint densities of states are computed and compared to the dielectric functions determined from the optical measurements. Additional calculations were performed in which the Fermi level or band gap energies are rigidly shifted by a small energy increment. These calculations are then used to simulate the derivative structure in thermomodulation spectra and relate the origin of experimental interband features to the calculated energy bands. While good systematic agreement is obtained for several spectral features, the origin of low-energy interband transitions in YH/sub 2/ cannot be explained by these calculated bands. A lattice-size-dependent premature occupation of octahedral sites by hydrogen atoms in the fcc metal lattice is suggested to account for this discrepancy. Various non-self-consistent calculations are used to examine the effect of such a premature occupation. Measurements of the optical absorptivity of LaH/sub x/ with 1.6 < x < 2.9 are presented which, as expected, indicate a more premature occupation of the octahedral sites in the larger LaH/sub 2/ lattice. These experimental results also suggest that, in contrast to recent calculations, LaH/sub 3/ is a small-band-gap semiconductor.

  6. Enhanced tunable narrow-band THz emission from laser-modulated electron beams

    SciTech Connect

    Xiang, D.; Stupakov, G.; /SLAC

    2009-06-19

    We propose and analyze a scheme to generate enhanced narrow-band terahertz (THz) radiation through down-conversion of the frequency of optical lasers using laser-modulated electron beams. In the scheme the electron beam is first energy modulated by two lasers with wave numbers k{sub 1} and k2, respectively. After passing through a dispersion section, the energy modulation is converted to density modulation. Due to the nonlinear conversion process, the beam will have density modulation at wave number k = nk{sub 1} + mk{sub 2}, where n and m are positive or negative integers. By properly choosing the parameters for the lasers and dispersion section, one can generate density modulation at THz frequency in the beam using optical lasers. This density-modulated beam can be used to generate powerful narrow-band THz radiation. Since the THz radiation is in tight synchronization with the lasers, it should provide a high temporal resolution for the optical-pump THz-probe experiments. The central frequency of the THz radiation can be easily tuned by varying the wavelength of the two lasers and the energy chirp of the electron beam. The proposed scheme is in principle able to generate intense narrow-band THz radiation covering the whole THz range and offers a promising way towards the tunable intense narrow-band THz sources.

  7. Analysis of the electronic structure of crystals through band structure unfolding

    NASA Astrophysics Data System (ADS)

    Gordienko, A. B.; Kosobutsky, A. V.

    2016-03-01

    In this work, we consider an alternative implementation of the band structure unfolding method within the framework of the density functional theory, which combines the advantages of the basis of localized functions and plane waves. This approach has been used to analyze the electronic structure of the ordered CuCl x Br1- x copper halide alloys and F 0 center in MgO that enables us to reveal qualitatively the features remaining hidden when using the standard supercell method, because of the complex band structure of systems with defects.

  8. Phase analysis on dual-phase steel using band slope of electron backscatter diffraction pattern.

    PubMed

    Kang, Jun-Yun; Park, Seong-Jun; Moon, Man-Been

    2013-08-01

    A quantitative and automated phase analysis of dual-phase (DP) steel using electron backscatter diffraction (EBSD) was attempted. A ferrite-martensite DP microstructure was produced by intercritical annealing and quenching. An EBSD map of the microstructure was obtained and post-processed for phase discrimination. Band slope (BS), which was a measure of pattern quality, exhibited much stronger phase contrast than another conventional one, band contrast. Owing to high sensitivity to lattice defect and little orientation dependence, BS provided handiness in finding a threshold for phase discrimination. Its grain average gave a superior result on the discrimination and volume fraction measurement of the constituent phases in the DP steel. PMID:23920165

  9. The effect of ligand dynamics on heme electronic transition band III in myoglobin.

    PubMed

    Nienhaus, Karin; Lamb, Don C; Deng, Pengchi; Nienhaus, G Ulrich

    2002-02-01

    Band III is a near-infrared electronic transition at ~13,000 cm(-1) in heme proteins that has been studied extensively as a marker of protein conformational relaxation after photodissociation of the heme-bound ligand. To examine the influence of the heme pocket structure and ligand dynamics on band III, we have studied carbon monoxide recombination in a variety of myoglobin mutants after photolysis at 3 K using Fourier transform infrared temperature-derivative spectroscopy with monitoring in three spectral ranges, (1) band III, the mid-infrared region of (2) the heme-bound CO, and (3) the photodissociated CO. Here we present data on mutant myoglobins V68F and L29W, which both exhibit pronounced ligand movements at low temperature. From spectral and kinetic analyses in the mid-infrared, a small number of photoproduct populations can be distinguished, differing in their distal heme pocket conformations and/or CO locations. We have decomposed band III into its individual photoproduct contributions. Each photoproduct state exhibits a different "kinetic hole-burning" (KHB) effect, a coupling of the activation enthalpy for rebinding to the position of band III. The analysis reveals that the heme pocket structure and the photodissociated CO markedly affect the band III transition. A strong kinetic hole-burning effect results only when the CO ligand resides in the docking site on top of the heme group. Migration of CO away from the heme group leads to an overall blue shift of band III. Consequently, band III can be used as a sensitive tool to study ligand dynamics after photodissociation in heme proteins. PMID:11806945

  10. The change in dielectric constant, AC conductivity and optical band gaps of polymer electrolyte film: Gamma irradiation

    SciTech Connect

    Raghu, S. Subramanya, K. Sharanappa, C. Mini, V. Archana, K. Sanjeev, Ganesh Devendrappa, H.

    2014-04-24

    The effects of gamma (γ) irradiation on dielectric and optical properties of polymer electrolyte film were investigated. The dielectric constant and ac conductivity increases with γ dose. Also optical band gap decreased from 4.23 to 3.78ev after irradiation. A large dependence of the polymer properties on the irradiation dose was noticed. This suggests that there is a possibility of improving polymer electrolyte properties on gamma irradiation.

  11. Effect of particle size on band gap and DC electrical conductivity of TiO2 nanomaterial

    NASA Astrophysics Data System (ADS)

    Avinash, B. S.; Chaturmukha, V. S.; Jayanna, H. S.; Naveen, C. S.; Rajeeva, M. P.; Harish, B. M.; Suresh, S.; Lamani, Ashok R.

    2016-05-01

    Materials reduced to the Nano scale can exhibit different properties compared to what they exhibit on a micro scale, enabling unique applications. When TiO2 is reduced to Nano scale it shows unique properties, of which the electrical aspect is highly important. This paper presents increase in the energy gap and decrease in conductivity with decrease in particle size of pure Nano TiO2 synthesized by hydrolysis and peptization of titanium isopropoxide. Aqueous solution with various pH and peptizing the resultant suspension will form Nano TiO2 at different particle sizes. As the pH of the solution is made acidic reduction in the particle size is observed. And it is confirmed from XRD using Scherer formula and SEM, as prepared samples are studied for UV absorbance, and DC conductivity from room temperature to 400°C. From the tauc plot it was observed, and calculated the energy band gap increases as the particle size decreases and shown TiO2 is direct band gap. From Arrhenius plot clearly we encountered, decrease in the conductivity for the decrease in particle size due to hopping of charge carriers and it is evident that, we can tailor the band gap by varying particle size.

  12. Dual electron-phonon coupling model for gigantic photoenhancement of the dielectric constant and electronic conductivity in SrTi O3

    NASA Astrophysics Data System (ADS)

    Qiu, Y.; Wu, C. Q.; Nasu, K.

    2005-12-01

    In connection with the recent experimental discovery on photoenhancements of the electronic conductivity and the quasi-static electric susceptibility in SrTiO3 , we theoretically study a photogeneration mechanism of charged and conductive ferroelectric domains in this perovskite type quantum dielectric. The photo-generated electron, being quite itinerant in the 3d band of Ti4+ , is assumed to couple weakly but quadratically with soft-anharmonic T1u phonons in this quantum dielectric, in view of the parity of this lattice vibration. The photo-generated electron is also assumed to couple strongly but linearly with the breathing type high energy phonons. Using a tight-binding model for electrons, we will show that this dual electron-phonon coupling results in two types of polarons, a “super-para-electric (SPE) large polaron” with a quasi-globle parity violation, and an “off-center type self-trapped polaron” with only a local parity violation. This SPE large polaron is shown to be equal to a singly charged (e-) and conductive ferroelectric domain with a quasi-macroscopic range. Two of such large polarons are shown to aggregate and form an SPE large bipolaron, which is still conductive. Various other bipolaron clusters are also shown to be formed in this electron-phonon coupled system. These large polarons have a high mobility and an enhanced quasi-static dielectric susceptibility. Effect of adulteration is also discussed.

  13. Electronic d-band properties of gold nanoclusters grown on amorphous carbon

    NASA Astrophysics Data System (ADS)

    Visikovskiy, Anton; Matsumoto, Hisashi; Mitsuhara, Kei; Nakada, Toshitaka; Akita, Tomoki; Kido, Yoshiaki

    2011-04-01

    The electronic d-band properties are important factors for the emerging catalytic activity of Au nanoclusters of sub-5-nm size. We analyzed the d-band properties of Au nanoclusters grown on amorphous carbon supports by photoelectron spectroscopy using synchrotron-radiation light coupled with high-resolution ion scattering spectrometry which enables us to estimate the size and shape of Au nanoclusters. The d-band width (Wd), d-band center position (Ed), and apparent 5d3/2-d5/2 spin-orbit splitting (ESO) were determined as a function of a number of Au atoms per cluster (nA) and an average coordination number (nC) in a wide range (11band narrowing which is caused by hybridization of fewer wave functions of the valence electrons. However, Ed shifts to the higher binding energy side with decreasing cluster size. The rapid movement of Ed is attributed to the dynamic final-state effect, which results in higher binding energy shifts of core and valence states due to a positive hole created after photoelectron emission. We have estimated the contribution from the final-state effect and derived the approximated initial-state spectra. Modified data, however, still show a slight movement of the d-band center away from the Fermi level (EF) although the Ed values for Au nanoclusters are closer to EF compared to the bulk value. This behavior is ascribed to the contraction of average Au-Au bond length with decreasing cluster size.

  14. Electronic d-band properties of gold nanoclusters grown on amorphous carbon

    SciTech Connect

    Visikovskiy, Anton; Matsumoto, Hisashi; Mitsuhara, Kei; Nakada, Toshitaka; Kido, Yoshiaki; Akita, Tomoki

    2011-04-15

    The electronic d-band properties are important factors for the emerging catalytic activity of Au nanoclusters of sub-5-nm size. We analyzed the d-band properties of Au nanoclusters grown on amorphous carbon supports by photoelectron spectroscopy using synchrotron-radiation light coupled with high-resolution ion scattering spectrometry which enables us to estimate the size and shape of Au nanoclusters. The d-band width (W{sub d}), d-band center position (E{sub d}), and apparent 5d{sub 3/2}-d{sub 5/2} spin-orbit splitting (E{sub SO}) were determined as a function of a number of Au atoms per cluster (n{sub A}) and an average coordination number (n{sub C}) in a wide range (11band narrowing which is caused by hybridization of fewer wave functions of the valence electrons. However, E{sub d} shifts to the higher binding energy side with decreasing cluster size. The rapid movement of E{sub d} is attributed to the dynamic final-state effect, which results in higher binding energy shifts of core and valence states due to a positive hole created after photoelectron emission. We have estimated the contribution from the final-state effect and derived the approximated initial-state spectra. Modified data, however, still show a slight movement of the d-band center away from the Fermi level (E{sub F}) although the E{sub d} values for Au nanoclusters are closer to E{sub F} compared to the bulk value. This behavior is ascribed to the contraction of average Au-Au bond length with decreasing cluster size.

  15. Electronic Conduction through Atomic Chains, Quantum Well and Quantum Wire

    NASA Astrophysics Data System (ADS)

    Sharma, A. C.

    2011-07-01

    Charge transport is dynamically and strongly linked with atomic structure, in nanostructures. We report our ab-initio calculations on electronic transport through atomic chains and the model calculations on electron-electron and electron-phonon scattering rates in presence of random impurity potential in a quantum well and in a quantum wire. We computed synthesis and ballistic transport through; (a) C and Si based atomic chains attached to metallic electrodes, (b) armchair (AC), zigzag (ZZ), mixed, rotated-AC and rotated-ZZ geometries of small molecules made of 2S, 6C & 4H atoms attaching to metallic electrodes, and (c) carbon atomic chain attached to graphene electrodes. Computed results show that synthesis of various atomic chains are practically possible and their transmission coefficients are nonzero for a wide energy range. The ab-initio calculations on electronic transport have been performed with the use of Landauer-type scattering formalism formulated in terms of Grben's functions in combination with ground-state DFT. The electron-electron and electron-phonon scattering rates have been calculated as function of excitation energy both at zero and finite temperatures for disordered 2D and 1D systems. Our model calculations suggest that electron scattering rates in a disordered system are mainly governed by effective dimensionality of a system, carrier concentration and dynamical screening effects.

  16. Structural characteristic correlated to the electronic band gap in Mo S2

    NASA Astrophysics Data System (ADS)

    Chu, Shengqi; Park, Changyong; Shen, Guoyin

    2016-07-01

    The structural evolution with pressure in bulk Mo S2 has been investigated by high-pressure x-ray diffraction using synchrotron radiation. We found that the out-of-plane S-Mo-S bond angle θ increases and that in in-plane angle ϕ decreases linearly with increasing pressure across the known semiconducting-to-metal phase transition, whereas the Mo-S bond length and the S-Mo-S trilayer thickness display only little change. Extrapolating the experimental result along the in-plane lattice parameter with pressure, both S-Mo-S bond angles trend to those found in monolayer Mo S2 , which manifests as a structural characteristic closely correlating the electronic band gap of Mo S2 to its physical forms and phases, e.g., monolayer as direct band gap semiconductor, multilayer or bulk as indirect band gap semiconductor, and high-pressure (>19 GPa ) bulk form as metal. Combined with the effects of bond strength and van der Waals interlayer interactions, the structural correlations between the characteristic bond angle and electronic band gaps are readily extendible to other transition metal dichalcogenide systems (M X2 , where M =Mo , W and X =S , Se, Te).

  17. Topologically nontrivial electronic bands and tunable Dirac cones in graphynes with spin-orbit coupling

    NASA Astrophysics Data System (ADS)

    Juricic, Vladimir; van Miert, Guido; Morais Smith, Cristiane

    2015-03-01

    Graphynes represent an emerging family of carbon allotropes that differ from graphene by the presence of the triple bonds (-C ≡C-) in their band structure. They have recently attracted much interest due to the tunability of the Dirac cones in the band structure. I will show that the spin-orbit coupling in β-graphyne could produce various effects related to the topological properties of its electronic bands. Intrinsic spin-orbit coupling yields high- and tunable Chern-number bands, which may host both topological and Chern insulators, in the presence and absence of time-reversal symmetry, respectively. Furthermore, Rashba spin-orbit coupling can be used to control the position and the number of Dirac cones in the Brillouin zone. Finally, I will also discuss the electronic properties of α - and γ - graphyne in the presence of the spin-orbit coupling within recently developed general theory of spin-orbit couplings in graphynes. Work supported by the Netherlands Organization for Scientific Research (NWO).

  18. Room-Temperature Electron Spin Relaxation of Triarylmethyl Radicals at the X- and Q-Bands.

    PubMed

    Kuzhelev, Andrey A; Trukhin, Dmitry V; Krumkacheva, Olesya A; Strizhakov, Rodion K; Rogozhnikova, Olga Yu; Troitskaya, Tatiana I; Fedin, Matvey V; Tormyshev, Victor M; Bagryanskaya, Elena G

    2015-10-29

    Triarylmethyl radicals (trityls, TAMs) represent a relatively new class of spin labels. The long relaxation of trityls at room temperature in liquid solutions makes them a promising alternative for traditional nitroxides. In this work we have synthesized a series of TAMs including perdeuterated Finland trityl (D36 form), mono-, di-, and triester derivatives of Finland-D36 trityl, the deuterated form of OX63, the dodeca-n-butyl homologue of Finland trityl, and triamide derivatives of Finland trityl with primary and secondary amines attached. We have studied room-temperature relaxation properties of these TAMs in liquids using pulsed electron paramagnetic resonance (EPR) at two microwave frequency bands. We have found the clear dependence of phase memory time (Tm ∼ T2) on the magnetic field: room-temperature Tm values are ∼1.5-2.5 times smaller at the Q-band (34 GHz, 1.2 T) than at the X-band (9 GHz, 0.3 T). This trend is ascribed to the contribution from g-anisotropy that is negligible at lower magnetic fields but comes into play at the Q-band. In agreement with this, the difference between T1 and Tm becomes more pronounced at the Q-band than at the X-band due to increased contributions from incomplete motional averaging of g-anisotropy. Linear dependence of (1/Tm - 1/T1) on viscosity implies that g-anisotropy is modulated by rotational motion of the trityl radical. On the basis of the analysis of previous data and results of the present work, we conclude that, in the general situation where the spin label is at least partly mobile, the X-band is most suitable for application of trityls for room-temperature pulsed EPR distance measurements. PMID:26001103

  19. Electronic band gaps and transport properties in periodically alternating mono- and bi-layer graphene superlattices

    NASA Astrophysics Data System (ADS)

    Fan, Xiong; Huang, Wenjun; Ma, Tianxing; Wang, Li-Gang; Lin, Hai-Qing

    2015-12-01

    We investigate the electronic band structure and transport properties of periodically alternating mono- and bi-layer graphene superlattices (MBLG SLs). In such MBLG SLs, there exists a zero-averaged wave vector (zero-\\overline{k} ) gap that is insensitive to the lattice constant. This zero-\\overline{k} gap can be controlled by changing both the ratio of the potential widths and the interlayer coupling coefficient of the bilayer graphene. We also show that there exist extra Dirac points; the conditions for these extra Dirac points are presented analytically. Lastly, we demonstrate that the electronic transport properties and the energy gap of the first two bands in MBLG SLs are tunable through adjustment of the interlayer coupling and the width ratio of the periodic mono- and bi-layer graphene.

  20. Electronic band gaps and transport properties in periodically alternating mono- and bi-layer graphene superlattices

    NASA Astrophysics Data System (ADS)

    Fan, Xiong; Huang, Wenjun; Ma, Tianxing; Wang, Li-Gang; Lin, Hai-Qing

    We investigated electronic band structure and transport properties of periodically alternating mono- and bi-layer graphene superlattices (MBLG SLs). In such MBLG SLs, there exists the zero-averaged wave vector (zero- k) gap, which is insensitive to the lattice constant, and this zero- k gap can be controlled via changing both the ratio of potentials' widths and the interlayer coupling coefficient of bilayer graphene. It is also found that there exist the extra Dirac points and their conditions are analytically presented. Lastly, it shows that the electronic transport properties and the energy gap (Eg) of the first two bands in MBLG SLs are tunable by the interlayer coupling and the widths' ratio of the periodic mono- and bi-layer graphene.

  1. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility.

    PubMed

    Malasi, A; Taz, H; Farah, A; Patel, M; Lawrie, B; Pooser, R; Baddorf, A; Duscher, G; Kalyanaraman, R

    2015-01-01

    Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 10(4) S/m) and Hall mobility (>30 cm(2)/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned. PMID:26670421

  2. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    NASA Astrophysics Data System (ADS)

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, B.; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-12-01

    Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.

  3. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    DOE PAGESBeta

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, Benjamin; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-12-16

    We report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergentmore » semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.« less

  4. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    PubMed Central

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, B.; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-01-01

    Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned. PMID:26670421

  5. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    SciTech Connect

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, Benjamin; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-12-16

    We report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.

  6. Electronic band structures and photovoltaic properties of MWO{sub 4} (M=Zn, Mg, Ca, Sr) compounds

    SciTech Connect

    Kim, Dong Wook; Cho, In-Sun; Shin, Seong Sik; Lee, Sangwook; Noh, Tae Hoon; Kim, Dong Hoe; Jung, Hyun Suk; Hong, Kug Sun

    2011-08-15

    Divalent metal tungstates, MWO{sub 4}, with wolframite (M=Zn and Mg) and scheelite (M=Ca and Sr) structures were prepared using a conventional solid state reaction method. Their electronic band structures were investigated by a combination of electronic band structure calculations and electrochemical measurements. From these investigations, it was found that the band structures (i.e. band positions and band gaps) of the divalent metal tungstates were significantly influenced by their crystal structural environments, such as the W-O bond length. Their photovoltaic properties were evaluated by applying to the working electrodes for dye-sensitized solar cells. The dye-sensitized solar cells employing the wolframite-structured metal tungstates (ZnWO{sub 4} and MgWO{sub 4}) exhibited better performance than those using the scheelite-structured metal tungstates (CaWO{sub 4} and SrWO{sub 4}), which was attributed to their enhanced electron transfer resulting from their appropriate band positions. - Graphical abstract: The electronic band structures of divalent metal tungstates are described from the combination of experimental results and theoretical calculations, and their electronic structure-dependent photovoltaic performances are also studied. Highlights: > MWO{sub 4} compounds with wolframite (M=Zn and Mg) and scheelite structure (M=Ca and Sr) were prepared. > Their electronic band structures were investigated by the calculations and the measurements. > Their photovoltaic properties were determined by the crystal and electronic structures.

  7. Electron-impact excitation of the 31. 4-eV band in N sub 2

    SciTech Connect

    de Souza, G.G.B.; Bielschowsky, C.E.; Lucas, C.A.; Souza, A.C.A. )

    1990-08-01

    Generalized oscillator strengths (GOS) for the dipole-forbidden 31.4-eV band in N{sub 2} have been determined both experimentally and theoretically. The experimental values for the GOS were obtained using a crossed-beam electron spectrometer at 1-keV impact energy. The theoretical results were determined using the first Born approximation with {ital ab} {ital initio} configuration-interaction target wave functions.

  8. Conducting Research on the Internet: Strategies for Electronic Interviewing.

    ERIC Educational Resources Information Center

    Persichitte, Kay A.; And Others

    This study provides guidelines for using electronic mail for data collection and sheds light on some of the substantive issues related to research via this medium. Researchers creating electronic interview situations for the study stressed that the atmosphere should be informal and conversational. Interviewees were encouraged to use typical…

  9. Micro-metric electronic patterning of a topological band structure using a photon beam

    NASA Astrophysics Data System (ADS)

    Golden, Mark; Frantzeskakis, Emmanouil; de Jong, Nick; Huang, Yingkai; Wu, Dong; Pan, Yu; de Visser, Anne; van Heumen, Erik; van Bay, Tran; Zwartsenberg, Berend; Pronk, Pieter; Varier Ramankutty, Shyama; Tytarenko, Alona; Xu, Nan; Plumb, Nick; Shi, Ming; Radovic, Milan; Varkhalov, Andrei

    2015-03-01

    The only states crossing EF in ideal, 3D TIs are topological surface states. Single crystals of Bi2Se3andBi2Te3 are too defective to exhibit bulk-insulating behaviour, and ARPES shows topologically trivial 2DEGs at EF in the surface region due to downward band bending. Ternary & quaternary alloys of Bi /Te /Se /Sb hold promise for obtaining bulk-insulating crystals. Here we report ARPES data from quaternary, bulk-insulating, Bi-based TIs. Shortly after cleavage in UHV, downward band bending pulls the bulk conduction band below EF, once again frustrating the ``topological only'' ambition for the Fermi surface. However, there is light at the end of the tunnel: we show that a super-band-gap photon beam generates a surface photovoltage sufficient to flatten the bands, thereby recovering the ideal, ``topological only'' situation. In our bulk-insulating quaternary TIs, this effect is local in nature, and permits the writing of arbitrary, micron-sized patterns in the topological energy landscape at the surface. Support from FOM, NWO and the EU is gratefully acknowledged.

  10. Theoretical modeling of low-energy electronic absorption bands in reduced cobaloximes

    DOE PAGESBeta

    Bhattacharjee, Anirban; Chavarot-Kerlidou, Murielle; Dempsey, Jillian L.; Gray, Harry B.; Fujita, Etsuko; Muckerman, James T.; Fontecave, Marc; Artero, Vincent; Arantes, Guilherme M.; Field, Martin J.

    2014-08-11

    Here, we report that the reduced Co(I) states of cobaloximes are powerful nucleophiles that play an important role in the hydrogen-evolving catalytic activity of these species. In this work we have analyzed the low energy electronic absorption bands of two cobaloxime systems experimentally and using a variety of density functional theory and molecular orbital ab initio quantum chemical approaches. Overall we find a reasonable qualitative understanding of the electronic excitation spectra of these compounds but show that obtaining quantitative results remains a challenging task.

  11. Theoretical modeling of low-energy electronic absorption bands in reduced cobaloximes

    SciTech Connect

    Bhattacharjee, Anirban; Chavarot-Kerlidou, Murielle; Dempsey, Jillian L.; Gray, Harry B.; Fujita, Etsuko; Muckerman, James T.; Fontecave, Marc; Artero, Vincent; Arantes, Guilherme M.; Field, Martin J.

    2014-08-11

    Here, we report that the reduced Co(I) states of cobaloximes are powerful nucleophiles that play an important role in the hydrogen-evolving catalytic activity of these species. In this work we have analyzed the low energy electronic absorption bands of two cobaloxime systems experimentally and using a variety of density functional theory and molecular orbital ab initio quantum chemical approaches. Overall we find a reasonable qualitative understanding of the electronic excitation spectra of these compounds but show that obtaining quantitative results remains a challenging task.

  12. Theoretical Modeling of Low Energy Electronic Absorption Bands in Reduced Cobaloximes

    PubMed Central

    Bhattacharjee, Anirban; Chavarot-Kerlidou, Murielle; Dempsey, Jillian L.; Gray, Harry B.; Fujita, Etsuko; Muckerman, James T.; Fontecave, Marc; Artero, Vincent; Arantes, Guilherme M.; Field, Martin J.

    2015-01-01

    The reduced Co(I) states of cobaloximes are powerful nucleophiles that play an important role in the hydrogen-evolving catalytic activity of these species. In this work we have analyzed the low energy electronic absorption bands of two cobaloxime systems experimentally and using a variety of density functional theory and molecular orbital ab initio quantum chemical approaches. Overall we find a reasonable qualitative understanding of the electronic excitation spectra of these compounds but show that obtaining quantitative results remains a challenging task. PMID:25113847

  13. Surface-plasmon enhanced photodetection at communication band based on hot electrons

    SciTech Connect

    Wu, Kai; Zhan, Yaohui E-mail: xfli@suda.edu.cn; Wu, Shaolong; Deng, Jiajia; Li, Xiaofeng E-mail: xfli@suda.edu.cn

    2015-08-14

    Surface plasmons can squeeze light into a deep-subwavelength space and generate abundant hot electrons in the nearby metallic regions, enabling a new paradigm of photoconversion by the way of hot electron collection. Unlike the visible spectral range concerned in previous literatures, we focus on the communication band and design the infrared hot-electron photodetectors with plasmonic metal-insulator-metal configuration by using full-wave finite-element method. Titanium dioxide-silver Schottky interface is employed to boost the low-energy infrared photodetection. The photodetection sensitivity is strongly improved by enhancing the plasmonic excitation from a rationally engineered metallic grating, which enables a strong unidirectional photocurrent. With a five-step electrical simulation, the optimized device exhibits an unbiased responsivity of ∼0.1 mA/W and an ultra-narrow response band (FWHM = 4.66 meV), which promises to be a candidate as the compact photodetector operating in communication band.

  14. Theoretical and experimental differential cross sections for electron impact excitation of the electronic bands of furfural.

    PubMed

    Jones, D B; Neves, R F C; Lopes, M C A; da Costa, R F; do N Varella, M T; Bettega, M H F; Lima, M A P; García, G; Limão-Vieira, P; Brunger, M J

    2016-03-28

    We report results from a joint experimental and theoretical investigation into electron scattering from the important industrial species furfural (C5H4O2). Specifically, differential cross sections (DCSs) have been measured and calculated for the electron-impact excitation of the electronic states of C5H4O2. The measurements were carried out at energies in the range 20-40 eV, and for scattered-electron angles between 10° and 90°. The energy resolution of those experiments was typically ∼80 meV. Corresponding Schwinger multichannel method with pseudo-potential calculations, for energies between 6-50 eV and with and without Born-closure, were also performed for a sub-set of the excited electronic-states that were accessed in the measurements. Those calculations were undertaken at the static exchange plus polarisation-level using a minimum orbital basis for single configuration interaction (MOB-SCI) approach. Agreement between the measured and calculated DCSs was qualitatively quite good, although to obtain quantitative accord, the theory would need to incorporate even more channels into the MOB-SCI. The role of multichannel coupling on the computed electronic-state DCSs is also explored in some detail. PMID:27036450

  15. Theoretical and experimental differential cross sections for electron impact excitation of the electronic bands of furfural

    NASA Astrophysics Data System (ADS)

    Jones, D. B.; Neves, R. F. C.; Lopes, M. C. A.; da Costa, R. F.; do N. Varella, M. T.; Bettega, M. H. F.; Lima, M. A. P.; García, G.; Limão-Vieira, P.; Brunger, M. J.

    2016-03-01

    We report results from a joint experimental and theoretical investigation into electron scattering from the important industrial species furfural (C5H4O2). Specifically, differential cross sections (DCSs) have been measured and calculated for the electron-impact excitation of the electronic states of C5H4O2. The measurements were carried out at energies in the range 20-40 eV, and for scattered-electron angles between 10° and 90°. The energy resolution of those experiments was typically ˜80 meV. Corresponding Schwinger multichannel method with pseudo-potential calculations, for energies between 6-50 eV and with and without Born-closure, were also performed for a sub-set of the excited electronic-states that were accessed in the measurements. Those calculations were undertaken at the static exchange plus polarisation-level using a minimum orbital basis for single configuration interaction (MOB-SCI) approach. Agreement between the measured and calculated DCSs was qualitatively quite good, although to obtain quantitative accord, the theory would need to incorporate even more channels into the MOB-SCI. The role of multichannel coupling on the computed electronic-state DCSs is also explored in some detail.

  16. A broad-band VLF-burst associated with ring-current electrons. [geomagnetic storms

    NASA Technical Reports Server (NTRS)

    Maeda, K.

    1982-01-01

    Frequency band broadening takes place just outside of the nighttime plasmasphere, where the density of cold plasma is known to be very low during the later phase of a geomagnetic storm. Instead of the gradual broadening of several hours duration, a burst type broadening of VLF emission lasting less than ten minutes was observed by Explorer 45 in a similar location. The magnetic field component of this emission is very weak and the frequency spreads below the local half electron cyclotron frequency. Corresponding enhancement of the anisotropic ring current electrons is also very sudden and limited below the order of 10 keV without significant velocity dispersion, in contrast to the gradual broadening events. The cause of this type of emission band spreading can be attributed to the generation of the quasielectrostatic whistler mode emission of short wavelength by hot bimaxwellian electrons surging into the domain of relatively low density magnetized cold plasma. The lack of energy dispersion in the enhanced electrons indicates that the inner edge of the plasma sheet, the source of these hot electrons, is not far from the location of this event.

  17. Design and application of multimegawatt X-band deflectors for femtosecond electron beam diagnostics

    NASA Astrophysics Data System (ADS)

    Dolgashev, Valery A.; Bowden, Gordon; Ding, Yuantao; Emma, Paul; Krejcik, Patrick; Lewandowski, James; Limborg, Cecile; Litos, Michael; Wang, Juwen; Xiang, Dao

    2014-10-01

    Performance of the x-ray free electron laser Linac Coherent Light Source (LCLS) and the Facility for Advanced Accelerator Experimental Tests (FACET) is determined by the properties of their extremely short electron bunches. Multi-GeV electron bunches in both LCLS and FACET are less than 100 fs long. Optimization of beam properties and understanding of free-electron laser operation require electron beam diagnostics with time resolution of about 10 fs. We designed, built and commissioned a set of high frequency X-band deflectors which can measure the beam longitudinal space charge distribution and slice energy spread to better than 10 fs resolution at full LCLS energy (14 GeV), and with 70 fs resolution at full FACET energy (20 GeV). Use of high frequency and high gradient in these devices allows them to reach unprecedented performance. We report on the physics motivation, design considerations, operational configuration, cold tests, and typical results of the X-band deflector systems currently in use at SLAC.

  18. Statistical analysis of the electronic crosstalk correction in Terra MODIS Band 27

    NASA Astrophysics Data System (ADS)

    Madhavan, Sriharsha; Sun, Junqiang; Xiong, Xiaoxiong; Wenny, Brian N.; Wu, Aisheng

    2014-10-01

    The first MODerate-resolution Imaging Spectroradiometer (MODIS), also known as the Proto-Flight model (PFM), is on-board the Terra spacecraft and has completed 14 years of on orbit flight as of December 18, 2013. MODIS remotely senses the Earth in 36 spectral bands, with a wavelength range from 0.4 μm to 14.4 μm. The 36 bands can be subdivided into two groups based on their spectral responsivity as Reflective Solar Bands (RSBs) and Thermal Emissive Bands (TEBs). Band 27 centered at 6.77 μm is a TEB used to study the global water vapor distribution. It was found recently that this band has been severely affected by electronic crosstalk. The electronic crosstalk magnitude, its on-orbit change and calibration impact have been well characterized in our previous studies through the use of regularly scheduled lunar observations. Further, the crosstalk correction was implemented in Earth view (EV) images and quantified the improvements of the same. However, improvements remained desirable on several fronts. Firstly, the effectiveness of the correction needed to be analyzed spatially and radiometrically over a number of scenes. Also, the temporal aspect of the correction had to be investigated in a rigorous manner. In order to address these issues, a one-orbit analysis was performed on the Level 1A (L1A) scene granules over a ten year period from 2003 through 2012. Results have been quantified statistically and show a significant reduction of image striping, as well as removal of leaked signal features from the neighboring bands. Statistical analysis was performed by analyzing histograms of the one-orbit granules at a scene and detector level before and after correction. The comprehensive analysis and results reported in this paper will be very helpful to the scientific community in understanding the impacts of crosstalk correction on various scenes and could potentially be applied for future improvements of band 27 calibration and, therefore, its retrieval for the

  19. Fully opposite spin polarization of electron and hole bands in DyN and related band structures of GdN and HoN

    NASA Astrophysics Data System (ADS)

    Cheiwchanchamnangij, Tawinan; Lambrecht, Walter R. L.

    2015-07-01

    Using quasiparticle self-consistent G W calculations, we show that DyN has an unusual nearly zero indirect gap semimetallic band structure in which the states near the valence band maximum are fully minority spin polarized at Γ while the states near the conduction band minimum (at X ) have fully majority spin character. This arises due to a strong hybridization of one of the minority spin f states of dysprosium with the N-2 p bands. The reason why only one of the f bands hybridizes is explained using symmetry arguments. We show that in HoN, this hybridization is already strongly reduced because of the deeper Ho-4 f minority spin states.

  20. Advances in Normal Conducting Accelerator Technology from the X-Band Linear Collider Program

    SciTech Connect

    Adolphsen, C; /SLAC

    2005-06-22

    In the mid-1990's, groups at SLAC and KEK began dedicated development of X-band (11.4 GHz) rf technology for a next generation, TeV-scale linear collider. The choice of a relatively high frequency, four times that of the SLAC 50 GeV Linac, was motivated by the cost benefits of having lower rf energy per pulse (hence fewer rf sources) and reasonable efficiencies at high gradients (hence shorter linacs). To realize such savings, however, requires operation at gradients and peak powers much higher than that hitherto achieved. During the past twelve years, these challenges were met through innovations on several fronts. This paper reviews these achievements, which include developments in the generation and transport of high power rf, and new insights into high gradient limitations.

  1. Banded structures in electron pitch angle diffusion coefficients from resonant wave-particle interactions

    NASA Astrophysics Data System (ADS)

    Tripathi, A. K.; Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

    2016-04-01

    Electron pitch angle (Dαα) and momentum (Dpp) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L = 4.6 and 6.8 for electron energies ≤10 keV. Landau (n = 0) resonance and cyclotron harmonic resonances n = ±1, ±2, … ±5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (α) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n = +1 and n = +2. A major contribution to momentum diffusion coefficients appears from n = +2. However, the banded structures in Dαα and Dpp coefficients appear only in the profile of diffusion coefficients for n = +2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The Dpp diffusion coefficient for ECH waves is one to two orders smaller than Dαα coefficients. For chorus waves, Dpp coefficients are about an order of magnitude smaller than Dαα coefficients for the case n ≠ 0. In case of Landau resonance, the values of Dpp coefficient are generally larger than the values of Dαα coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89° and harmonic resonances n = +1, +2, and +3, whereas for whistler mode waves, the frequencies have been calculated for angle 10° and Landau

  2. Universality of the Hall Conductivity in Interacting Electron Systems

    NASA Astrophysics Data System (ADS)

    Giuliani, Alessandro; Mastropietro, Vieri; Porta, Marcello

    2016-08-01

    We prove the quantization of the Hall conductivity for general weakly interacting gapped fermionic systems on two-dimensional periodic lattices. The proof is based on fermionic cluster expansion techniques combined with lattice Ward identities, and on a reconstruction theorem that allows us to compute the Kubo conductivity as the analytic continuation of its imaginary time counterpart.

  3. Correlation between morphology, electron band structure, and resistivity of Pb atomic chains on the Si(5 5 3)-Au surface.

    PubMed

    Jałochowski, M; Kwapiński, T; Łukasik, P; Nita, P; Kopciuszyński, M

    2016-07-20

    Structural and electron transport properties of multiple Pb atomic chains fabricated on the Si(5 5 3)-Au surface are investigated using scanning tunneling spectroscopy, reflection high electron energy diffraction, angular resolved photoemission electron spectroscopy and in situ electrical resistance. The study shows that Pb atomic chains growth modulates the electron band structure of pristine Si(5 5 3)-Au surface and hence changes its sheet resistivity. Strong correlation between chains morphology, electron band structure and electron transport properties is found. To explain experimental findings a theoretical tight-binding model of multiple atomic chains interacting on effective substrate is proposed. PMID:27228462

  4. Correlation between morphology, electron band structure, and resistivity of Pb atomic chains on the Si(5 5 3)-Au surface

    NASA Astrophysics Data System (ADS)

    Jałochowski, M.; Kwapiński, T.; Łukasik, P.; Nita, P.; Kopciuszyński, M.

    2016-07-01

    Structural and electron transport properties of multiple Pb atomic chains fabricated on the Si(5 5 3)-Au surface are investigated using scanning tunneling spectroscopy, reflection high electron energy diffraction, angular resolved photoemission electron spectroscopy and in situ electrical resistance. The study shows that Pb atomic chains growth modulates the electron band structure of pristine Si(5 5 3)-Au surface and hence changes its sheet resistivity. Strong correlation between chains morphology, electron band structure and electron transport properties is found. To explain experimental findings a theoretical tight-binding model of multiple atomic chains interacting on effective substrate is proposed.

  5. An electron-conducting pyrene-fused phenazinothiadiazole.

    PubMed

    Marco, A Belen; Cortizo-Lacalle, Diego; Gozalvez, Cristian; Olano, Mikel; Atxabal, Ainhoa; Sun, Xiangnan; Melle-Franco, Manuel; Hueso, Luis E; Mateo-Alonso, Aurelio

    2015-07-01

    A pyrene-fused phenazinothiadiazole that shows electron mobilities (μe = 0.016 cm(2) V(-1) s(-1)) two orders of magnitude higher than those reported for pyrene-fused pyrazaacenes is described. PMID:26051680

  6. Conductivity and optical band gaps of polyethylene oxide doped with Li{sub 2}SO{sub 4} salt

    SciTech Connect

    Chapi, Sharanappa Raghu, S. Subramanya, K. Archana, K. Mini, V. Devendrappa, H.

    2014-04-24

    The conductivity and optical properties of Li{sub 2}SO{sub 4} doped polyethylene oxide (PEO) films were studied. The polymer electrolyte films are prepared using solution casting technique. The material phase change was confirmed by X-ray diffraction (XRD) technique. Optical absorption study was conducted using UV- Vis. Spectroscopy in the wavelength range 190–1100nm on pure and doped PEO films. The direct and indirect optical band gaps were found decreased from 5.81–4.51eV and 4.84–3.43eV respectively with increasing the Li{sub 2}SO{sub 4}. The conductivity found to increases with increasing the dopant concentration due to strong hopping mechanism at room temperature.

  7. Cloaking core-shell nanoparticles from conducting electrons in solids.

    PubMed

    Liao, Bolin; Zebarjadi, Mona; Esfarjani, Keivan; Chen, Gang

    2012-09-21

    In this Letter, we aim at making nanoparticles embedded in a host semiconductor with a size comparable to electronic wavelengths "invisible" to the electron transport. Inspired by the recent progress made in optics and working within the framework of the expansion of partial waves, we demonstrate that the opposite effects imposed by potential barriers and wells of a core-shell nanoparticle on the phase shifts associated with the scattered electron wave could make the scattering cross section of the first two partial waves vanish simultaneously. We show that this is sufficient to cloak the nanoparticle from being detected by electrons with specific energy in the sense that a total scattering cross section smaller than 0.01% of the physical cross section can be obtained and a 4 orders of magnitude difference in the total scattering cross section can be presented within an energy range of only 40 meV, indicating possible applications of the "electron cloaks" as novel electronic switches and sensors, and in efficient energy harvesting and conversion technologies. PMID:23005976

  8. Cloaking Core-Shell Nanoparticles from Conducting Electrons in Solids

    NASA Astrophysics Data System (ADS)

    Liao, Bolin; Zebarjadi, Mona; Esfarjani, Keivan; Chen, Gang

    2012-09-01

    In this Letter, we aim at making nanoparticles embedded in a host semiconductor with a size comparable to electronic wavelengths “invisible” to the electron transport. Inspired by the recent progress made in optics and working within the framework of the expansion of partial waves, we demonstrate that the opposite effects imposed by potential barriers and wells of a core-shell nanoparticle on the phase shifts associated with the scattered electron wave could make the scattering cross section of the first two partial waves vanish simultaneously. We show that this is sufficient to cloak the nanoparticle from being detected by electrons with specific energy in the sense that a total scattering cross section smaller than 0.01% of the physical cross section can be obtained and a 4 orders of magnitude difference in the total scattering cross section can be presented within an energy range of only 40 meV, indicating possible applications of the “electron cloaks” as novel electronic switches and sensors, and in efficient energy harvesting and conversion technologies.

  9. 12 CFR 7.5008 - Location of a national bank conducting electronic activities.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 12 Banks and Banking 1 2010-01-01 2010-01-01 false Location of a national bank conducting electronic activities. 7.5008 Section 7.5008 Banks and Banking COMPTROLLER OF THE CURRENCY, DEPARTMENT OF THE TREASURY BANK ACTIVITIES AND OPERATIONS Electronic Activities § 7.5008 Location of a national bank conducting electronic activities. A national...

  10. Mixed ionic and electronic conductivity in polymers. Progress report, January 1, 1990--December 31, 1990

    SciTech Connect

    Shriver, D.F.

    1991-06-01

    New polymer films were synthesized that are mixed ionic-electronic conductors. Preliminary ion transport measurements have been made on these materials in the reduced state where electronic conductivity is negligible. We also have made preliminary measurements of switching times for these materials. Theoretical studies have been performed ion pairing in insulating and electronically conducting films.

  11. Quantification of electronic band gap and surface states on FeS2(100)

    NASA Astrophysics Data System (ADS)

    Herbert, F. W.; Krishnamoorthy, A.; Van Vliet, K. J.; Yildiz, B.

    2013-12-01

    The interfacial electronic properties and charge transfer characteristics of pyrite, FeS2, are greatly influenced by the presence of electronic states at the crystal free surface. We investigate the surface electronic structure of FeS2 (100) using scanning tunneling spectroscopy (STS) and interpret the results using tunneling current simulations informed by density functional theory. Intrinsic, dangling bond surface states located at the band edges reduce the fundamental band gap Eg from 0.95 eV in bulk FeS2 to 0.4 ± 0.1 eV at the surface. Extrinsic surface states from sulfur and iron defects contribute to Fermi level pinning but, due to their relatively low density of states, no detectable tunneling current was measured at energies within the intrinsic surface Eg. These findings help elucidate the nature of energy alignment for electron transfer processes at pyrite surfaces, which are relevant to evaluation of electrochemical processes including corrosion and solar energy conversion.

  12. Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC

    NASA Astrophysics Data System (ADS)

    Parisini, A.; Gorni, M.; Nath, A.; Belsito, L.; Rao, Mulpuri V.; Nipoti, R.

    2015-07-01

    The processing parameters which favour the onset of an impurity band conduction around room temperature with a contemporaneous elevated p-type conductivity in Al+ implanted 4H-SiC are highlighted by comparing original and literature results. In the examined cases, Al is implanted at 300-400 °C, in concentrations from below to above the Al solubility limit in 4H-SiC (2 × 1020 cm-3) and post implantation annealing temperature is ≥1950 °C. Transport measurements feature the onset of an impurity band conduction, appearing at increasing temperature for increasing Al implant dose, until this transport mechanism is enabled around room temperature. This condition appears suitable to guarantee a thermal stability of the electrical properties. In this study, the heaviest doped and less resistive samples (Al implanted concentration of 5 × 1020 cm-3 and resistivity of about 2 × 10-2 Ω cm) show a carrier density above the Al solubility limit, which is consistent with at least a 50% electrical activation for a 15% compensation. The model of Miller and Abrahams well describes the resistivity data of the lower doped sample, whereas a deviation from the behaviour predicted by such a model is observed in the higher doped specimens, consistent with the occurrence of a variable range hopping at low temperature.

  13. Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

    SciTech Connect

    Wickramaratne, Darshana E-mail: rlake@ece.ucr.edu; Lake, Roger K. E-mail: rlake@ece.ucr.edu; Zahid, Ferdows

    2015-08-21

    The valence band of a variety of few-layer, two-dimensional materials consist of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a “Mexican hat” or a Rashba dispersion. The two-dimensional density of states is singular at or near the band edge, and the band-edge density of modes turns on nearly abruptly as a step function. The large band-edge density of modes enhances the Seebeck coefficient, the power factor, and the thermoelectric figure of merit ZT. Electronic and thermoelectric properties are determined from ab initio calculations for few-layer III–VI materials GaS, GaSe, InS, InSe, for Bi{sub 2}Se{sub 3}, for monolayer Bi, and for bilayer graphene as a function of vertical field. The effect of interlayer coupling on these properties in few-layer III–VI materials and Bi{sub 2}Se{sub 3} is described. Analytical models provide insight into the layer dependent trends that are relatively consistent for all of these few-layer materials. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring these effects.

  14. Frequency tunable electronic sources working at room temperature in the 1 to 3 THz band

    NASA Astrophysics Data System (ADS)

    Maestrini, Alain; Mehdi, Imran; Siles, José V.; Lin, Robert; Lee, Choonsup; Chattopadhyay, Goutam; Pearson, John; Siegel, Peter

    2012-10-01

    Compact, room temperature terahertz sources are much needed in the 1 to 3 THz band for developing multi-pixel heterodyne receivers for astrophysics and planetary science or for building short-range high spatial resolution THz imaging systems able to see through low water content and non metallic materials, smoke or dust for a variety of applications ranging from the inspection of art artifacts to the detection of masked or concealed objects. All solid-sate electronic sources based on a W-band synthesizer followed by a high-power W-band amplifier and a cascade of Schottky diode based THz frequency multipliers are now capable of producing more than 1 mW at 0.9THz, 50 μW at 2 THz and 18 μW at 2.6 THz without the need of any cryogenic system. These sources are frequency agile and have a relative bandwidth of 10 to 15%, limited by the high power W-band amplifiers. The paper will present the latest developments of this technology and its perspective in terms of frequency range, bandwidth and power.

  15. Electronic band structure effects in monolayer, bilayer, and hybrid graphene structures

    NASA Astrophysics Data System (ADS)

    Puls, Conor

    Since its discovery in 2005, graphene has been the focus of intense theoretical and experimental study owing to its unique two-dimensional band structure and related electronic properties. In this thesis, we explore the electronic properties of graphene structures from several perspectives including the magnetoelectrical transport properties of monolayer graphene, gap engineering and measurements in bilayer graphene, and anomalous quantum oscillation in the monolayer-bilayer graphene hybrids. We also explored the device implications of our findings, and the application of some experimental techniques developed for the graphene work to the study of a complex oxide, Ca3Ru2O7, exhibiting properties of strongly correlated electrons. Graphene's high mobility and ballistic transport over device length scales, make it suitable for numerous applications. However, two big challenges remain in the way: maintaining high mobility in fabricated devices, and engineering a band gap to make graphene compatible with logical electronics and various optical devices. We address the first challenge by experimentally evaluating mobilities in scalable monolayer graphene-based field effect transistors (FETs) and dielectric-covered Hall bars. We find that the mobility is limited in these devices, and is roughly inversely proportional to doping. By considering interaction of graphene's Dirac fermions with local charged impurities at the interface between graphene and the top-gate dielectric, we find that Coulomb scattering is responsible for degraded mobility. Even in the cleanest devices, a band gap is still desirable for electronic applications of graphene. We address this challenge by probing the band structure of bilayer graphene, in which a field-tunable energy band gap has been theoretically proposed. We use planar tunneling spectroscopy of exfoliated bilayer graphene flakes demonstrate both measurement and control of the energy band gap. We find that both the Fermi level and

  16. Probing radiation damage by alternated current conductivity as a method to characterize electron hopping conduction in DNA molecules

    SciTech Connect

    Gomes, Paulo J.; Coelho, Margarida; Antonio Ribeiro, Paulo; Raposo, Maria; Dionisio, Madalena

    2012-09-17

    Analysis of AC electrical conductivity of deoxyribonucleic acid (DNA) thin films, irradiated with ultraviolet (UV) light, revealed that electrical conduction arises from DNA chain electron hopping between base-pairs and phosphate groups. The hopping distance calculated from correlated barrier hopping model equals the distance between DNA base-pairs, which is consistent with the loss of conductivity with irradiation time arising from a decrease in phosphates groups. In the high frequency regime, at a given frequency, real part of conductivity strongly depends on irradiation time particularly for low dose levels suggesting the use of DNA based films for UV radiation sensors.

  17. Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion

    NASA Astrophysics Data System (ADS)

    Pop, Eric; Dutton, Robert W.; Goodson, Kenneth E.

    2004-11-01

    We describe the implementation of a Monte Carlo model for electron transport in silicon. The model uses analytic, nonparabolic electron energy bands, which are computationally efficient and sufficiently accurate for future low-voltage (<1V) nanoscale device applications. The electron-lattice scattering is incorporated using an isotropic, analytic phonon-dispersion model, which distinguishes between the optical/acoustic and the longitudinal/transverse phonon branches. We show that this approach avoids introducing unphysical thresholds in the electron distribution function, and that it has further applications in computing detailed phonon generation spectra from Joule heating. A set of deformation potentials for electron-phonon scattering is introduced and shown to yield accurate transport simulations in bulk silicon across a wide range of electric fields and temperatures. The shear deformation potential is empirically determined at Ξu=6.8eV, and consequently, the isotropically averaged scattering potentials with longitudinal and transverse acoustic phonons are DLA=6.39eV and DTA=3.01eV, respectively, in reasonable agreement with previous studies. The room-temperature electron mobility in strained silicon is also computed and shown to be in better agreement with the most recent phonon-limited data available. As a result, we find that electron coupling with g-type phonons is about 40% lower, and the coupling with f-type phonons is almost twice as strong as previously reported.

  18. Electronic structure and conductivity of nanocomposite metal (Au,Ag,Cu,Mo)-containing amorphous carbon films

    SciTech Connect

    Endrino, Jose L.; Horwat, David; Gago, Raul; Andersson, Joakim; Liu, Y.S.; Guo, Jinghua; Anders, Andre

    2008-05-14

    In this work, we study the influence of the incorporation of different metals (Me = Au, Ag, Cu, Mo) on the electronic structure of amorphous carbon (a-C:Me) films. The films were produced at room temperature using a novel pulsed dual-cathode arc deposition technique. Compositional analysis was performed with secondary neutral mass spectroscopy whereas X-ray diffraction was used to identify the formation of metal nanoclusters in the carbon matrix. The metal content incorporated in the nanocomposite films induces a drastic increase in the conductivity, in parallel with a decrease in the band gap corrected from Urbach energy. The electronic structure as a function of the Me content has been monitored by x-ray absorption near edge structure (XANES) at the C K-edge. XANES showed that the C host matrix has a dominant graphitic character and that it is not affected significantly by the incorporation of metal impurities, except for the case of Mo, where the modifications in the lineshape spectra indicated the formation of a carbide phase. Subtle modifications of the spectral lineshape are discussed in terms of nanocomposite formation.

  19. Dopant controlled trap-filling and conductivity enhancement in an electron-transport polymer

    SciTech Connect

    Higgins, Andrew E-mail: kahn@princeton.edu; Kahn, Antoine E-mail: kahn@princeton.edu; Mohapatra, Swagat K.; Barlow, Stephen; Marder, Seth R.

    2015-04-20

    Charge transport in organic semiconductors is often inhibited by the presence of tail states that extend into the band gap of a material and act as traps for charge carriers. This work demonstrates the passivation of acceptor tail states by solution processing of ultra-low concentrations of a strongly reducing air-stable organometallic dimer, the pentamethylrhodocene dimer, [RhCp*Cp]{sub 2}, into the electron transport polymer poly([N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide) -2,6-diyl]-alt-5,5′-(2,2′-bithiophene)), P(NDI{sub 2}OD-T{sub 2}). Variable-temperature current-voltage measurements of n-doped P(NDI{sub 2}OD-T{sub 2}) are presented with doping concentration varied through two orders of magnitude. Systematic variation of the doping parameter is shown to lower the activation energy for hopping transport and enhance film conductivity and electron mobility.

  20. Narrow-band Electrostatic Noise generated by an electron velocity space hole

    NASA Technical Reports Server (NTRS)

    Richard, Robert L.; Ashour-Abdalla, Maha; Coroniti, Ferdinand V.

    1993-01-01

    Narrow-band Electrostatic Noise (NEN) is a common occurrence in the Earth's distant magnetotail. NEN is observed in a frequency range (100-316 Hz) that falls roughly between the electron and ion plasma frequencies. This mode may result from holes in the electron distribution function associated with slow shocks. An instability that is associated with this mode is studied using numerical simulations. The growth of the instability depends on the size and shape of the hole. The hole mode can also be driven unstable by either an anisotropy in the electron distribution function or an ion beam. In all these cases the instability saturates at a low level and only a fraction of the available free energy is released.

  1. Generation of Intense Narrow-Band Tunable Terahertz Radiation from Highly Bunched Electron Pulse Train

    NASA Astrophysics Data System (ADS)

    Li, Heting; Lu, Yalin; He, Zhigang; Jia, Qika; Wang, Lin

    2016-07-01

    We present the analysis and start-to-end simulation of an intense narrow-band terahertz (THz) source with a broad tuning range of radiation frequency, using a single-pass free electron laser (FEL) driven by a THz-pulse-train photoinjector. The fundamental radiation frequency, corresponding to the spacing between the electron microbunches, can be easily tuned by varying the spacing time between the laser micropulses. Since the prebunched electron beam is highly bunched at the first several harmonics, with the harmonic generation technique, the radiation frequency range can be further enlarged by several times. The start-to-end simulation results show that this FEL is capable of generating a few tens megawatts power, several tens micro-joules pulse energy, and a few percent bandwidth at the frequencies of 0.5-5 THz. In addition, several practical issues are considered.

  2. Optical and electronic properties of delafossite CuBO{sub 2}p-type transparent conducting oxide

    SciTech Connect

    Ruttanapun, Chesta E-mail: krchesta@kmitl.ac.th

    2013-09-21

    CuBO{sub 2} delafossite was prepared by solid state reaction and calcined/sintered at 1005 °C. The optical properties of this p-type transparent conducting oxide were investigated. Its crystal structure, morphology, composition, oxygen decomposition, and optical and electronic properties were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, thermal gravimetric analysis (TGA), ultraviolet-visible-near-infrared (UV-VIS-NIR) and fluorescence spectroscopies, Seebeck coefficient, and electrical conductivity measurements. CuBO{sub 2} delafossite possesses a hexagonal space group R3{sup ¯}m. TGA indicated a weight loss of 10%, which was attributed to excess oxygen. The positive Seebeck coefficient confirmed p-type behavior. Emission at 355 nm indicated a direct band type transition, and the UV-VIS-NIR spectrum indicated an optical direct gap of 3.6 eV. Activation energies for carrier production and electrical conduction were 0.147 and 0.58 eV, respectively, indicating the thermal activation of carriers. CuBO{sub 2} delafossite is a p-type transparent conducting oxide with a wide band gap and may have potential in industrial p-type electrodes.

  3. Electronically conductive polymer binder for lithium-ion battery electrode

    SciTech Connect

    Liu, Gao; Xun, Shidi; Battaglia, Vincent S; Zheng, Honghe

    2014-10-07

    A family of carboxylic acid group containing fluorene/fluorenon copolymers is disclosed as binders of silicon particles in the fabrication of negative electrodes for use with lithium ion batteries. These binders enable the use of silicon as an electrode material as they significantly improve the cycle-ability of silicon by preventing electrode degradation over time. In particular, these polymers, which become conductive on first charge, bind to the silicon particles of the electrode, are flexible so as to better accommodate the expansion and contraction of the electrode during charge/discharge, and being conductive promote the flow battery current.

  4. Promising electron mobility and high thermal conductivity in Sc2CT2 (T = F, OH) MXenes

    NASA Astrophysics Data System (ADS)

    Zha, Xian-Hu; Zhou, Jie; Zhou, Yuhong; Huang, Qing; He, Jian; Francisco, Joseph S.; Luo, Kan; Du, Shiyu

    2016-03-01

    is determined to be 173 W m-1 K-1 (107 W m-1 K-1). Based on their excellent electron mobilities and high thermal conductivities, both of the Sc2CT2 (T = F, OH) MXenes could be promising candidate materials for the next generation of electronic devices. Electronic supplementary information (ESI) available: Linear fitting functions of the CBM of Sc2CT2 (T = F, OH) under uniaxial strain; the electronic energy bands based on primitive cells; the details of estimating carrier effective mass and the robustness of our predicted electron mobilities. See DOI: 10.1039/c5nr08639f

  5. Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

    SciTech Connect

    Yastrubchak, O.; Sadowski, J.; Domagala, J. Z.; Andrearczyk, T.; Wosinski, T.

    2014-08-18

    Impact of Bi incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition.

  6. Band structure and electron-phonon coupling in H3S : A tight-binding model

    NASA Astrophysics Data System (ADS)

    Ortenzi, L.; Cappelluti, E.; Pietronero, L.

    2016-08-01

    We present a robust tight-binding description, based on the Slater-Koster formalism, of the band structure of H3S in the Im3 ¯m structure, stable in the range of pressure P =180 -220 GPa. We show that the interatomic hopping between the 3 s and 3 p orbitals (and partially between the 3 p orbitals themselves) of sulfur is fundamental to capturing the relevant physics associated with the Van Hove singularities close to the Fermi level. Comparing the model so defined with density functional theory calculations we obtain a very good agreement not only of the overall band structure but also of the low-energy states and the Fermi surface properties. The description in terms of Slater-Koster parameters permits us also to evaluate at a microscopic level a hopping-resolved linear electron-lattice coupling which can be employed for further tight-binding analyses also at a local scale.

  7. Tunable electronic band structures and zero-energy modes of heterosubstrate-induced graphene superlattices

    NASA Astrophysics Data System (ADS)

    Fan, Xiong; Huang, Wenjun; Ma, Tianxing; Wang, Li-Gang

    2016-04-01

    We propose a tunable electronic band gap and zero-energy modes in periodic heterosubstrate-induced graphene superlattices. Interestingly, there is an approximate linear relation between the band gap and the proportion of an inhomogeneous substrate (i.e., percentages of different components) in the proposed superlattice, and the effect of structural disorder on the relation is discussed. In an inhomogeneous substrate with equal widths, zero-energy states emerge in the form of Dirac points by using asymmetric potentials, and the positions of Dirac points are addressed analytically. Further, the Dirac point exists at k =0 only for specific potentials; every time it appears, the group velocity vanishes in the ky direction, and the resonance occurs. For general cases of an inhomogeneous substrate with unequal widths, part of the zero-energy states are described analytically, and differently, they are not always Dirac points. Our prediction may be realized on a heterosubstrate such as SiO2/BN .

  8. Isolated energy level in the band gap of Yb2Si2O7 identified by electron energy-loss spectroscopy

    NASA Astrophysics Data System (ADS)

    Ogawa, Takafumi; Kobayashi, Shunsuke; Wada, Masashi; Fisher, Craig A. J.; Kuwabara, Akihide; Kato, Takeharu; Yoshiya, Masato; Kitaoka, Satoshi; Moriwake, Hiroki

    2016-05-01

    We report the detection of an isolated energy level in the band gap of crystalline Yb2Si2O7 in the low-energy-loss region of its electron energy-loss (EEL) spectrum, obtained using a monochromated scanning transmission electron microscope. The experimental results are corroborated by first-principles calculations of the theoretical EEL spectrum. The calculations reveal that unoccupied Yb 4 f orbitals constitute an isolated energy level about 1 eV below the conduction band minimum (CBM), resulting in a terrace about 1 eV wide at the band edge of the EEL spectrum. In the case of Yb2O3 , no band edge terrace is present because the unoccupied f level lies just below the CBM. We also examined optical absorption properties of Yb2Si2O7 using UV-vis diffuse reflectance spectroscopy, which shows that the isolated energy level could not be detected in the band edge of the obtained absorbance spectrum. These findings demonstrate the utility of low-loss EEL spectroscopy with high energy resolution for probing semilocalized electronic features.

  9. Assignment of the 290-nm electronic band system of indazole [1,2-benzodiazole] as π ∗ - π by rotational band contour analysis

    NASA Astrophysics Data System (ADS)

    Cané, E.; Trombetti, A.; Velino, B.; Caminati, W.

    1992-10-01

    The 0 00 band of the S1- S0 electronic absorption system of indazole at 290 nm has been analyzed, and the results of the computer simulation of its rotational contour have shown that this band is and {A}/{B} hybrid with an intensity ratio {A}/{B} = 1.22 . The S1- S0 electronic system is assigned as Ã1A'(ππ ∗)- X˜1A' . The same result has already been reached for benzimidazole (E. Cané et al., J. Mol. Spectrosc.150, 222-228 (1991)), and other ring-condensed aza-aromatic compounds although the relative amount of the type B and A components is different in each band. The transition moment is in the molecular plane nearly equidistant from the a- and b-inertial axes ( θ = ±42°).

  10. Determining the band gap and mean kinetic energy of atoms from reflection electron energy loss spectra

    SciTech Connect

    Vos, M.; Marmitt, G. G.; Finkelstein, Y.; Moreh, R.

    2015-09-14

    Reflection electron energy loss spectra from some insulating materials (CaCO{sub 3}, Li{sub 2}CO{sub 3}, and SiO{sub 2}) taken at relatively high incoming electron energies (5–40 keV) are analyzed. Here, one is bulk sensitive and a well-defined onset of inelastic excitations is observed from which one can infer the value of the band gap. An estimate of the band gap was obtained by fitting the spectra with a procedure that includes the recoil shift and recoil broadening affecting these measurements. The width of the elastic peak is directly connected to the mean kinetic energy of the atom in the material (Doppler broadening). The experimentally obtained mean kinetic energies of the O, C, Li, Ca, and Si atoms are compared with the calculated ones, and good agreement is found, especially if the effect of multiple scattering is taken into account. It is demonstrated experimentally that the onset of the inelastic excitation is also affected by Doppler broadening. Aided by this understanding, we can obtain a good fit of the elastic peak and the onset of inelastic excitations. For SiO{sub 2}, good agreement is obtained with the well-established value of the band gap (8.9 eV) only if it is assumed that the intensity near the edge scales as (E − E{sub gap}){sup 1.5}. For CaCO{sub 3}, the band gap obtained here (7 eV) is about 1 eV larger than the previous experimental value, whereas the value for Li{sub 2}CO{sub 3} (7.5 eV) is the first experimental estimate.

  11. Implementation of electronic crosstalk correction for terra MODIS PV LWIR bands

    NASA Astrophysics Data System (ADS)

    Geng, Xu; Madhavan, Sriharsha; Chen, Na; Xiong, Xiaoxiong

    2015-09-01

    The MODerate-resolution Imaging Spectroradiometer (MODIS) is one of the primary instruments in the fleet of NASA's Earth Observing Systems (EOS) in space. Terra MODIS has completed 15 years of operation far exceeding its design lifetime of 6 years. The MODIS Level 1B (L1B) processing is the first in the process chain for deriving various higher level science products. These products are used mainly in understanding the geophysical changes occurring in the Earth's land, ocean, and atmosphere. The L1B code is designed to carefully calibrate the responses of all the detectors of the 36 spectral bands of MODIS and provide accurate L1B radiances (also reflectances in the case of Reflective Solar Bands). To fulfill this purpose, Look Up Tables (LUTs), that contain calibration coefficients derived from both on-board calibrators and Earth-view characterized responses, are used in the L1B processing. In this paper, we present the implementation mechanism of the electronic crosstalk correction in the Photo Voltaic (PV) Long Wave InfraRed (LWIR) bands (Bands 27-30). The crosstalk correction involves two vital components. First, a crosstalk correction modular is implemented in the L1B code to correct the on-board Blackbody and Earth-View (EV) digital number (dn) responses using a linear correction model. Second, the correction coefficients, derived from the EV observations, are supplied in the form of LUTs. Further, the LUTs contain time stamps reflecting to the change in the coefficients assessed using the Noise Equivalent difference Temperature (NEdT) trending. With the algorithms applied in the MODIS L1B processing it is demonstrated that these corrections indeed restore the radiometric balance for each of the affected bands and substantially reduce the striping noise in the processed images.

  12. Electron momentum density, band structure, and structural properties of SrS

    SciTech Connect

    Sharma, G.; Munjal, N.; Vyas, V.; Kumar, R.; Sharma, B. K.; Joshi, K. B.

    2013-10-15

    The electron momentum density, the electronic band structure, and the structural properties of SrS are presented in this paper. The isotropic Compton profile, anisotropies in the directional Compton profiles, the electronic band structure and density of states are calculated using the ab initio periodic linear combination of atomic orbitals method with the CRYSTAL06 code. Structural parameters of SrS-lattice constants and bulk moduli in the B1 and B2 phases-are computed together with the transition pressure. The computed parameters are well in agreement with earlier investigations. To compare the calculated isotropic Compton profile, measurement on polycrystalline SrS is performed using 5Ci-{sup 241}Am Compton spectrometer. Additionally, charge transfer is studied by means of the Compton profiles computed from the ionic model. The nature of bonding in the isovalent SrS and SrO compounds is compared on the basis of equal-valenceelectron-density profiles and the bonding in SrS is found to be more covalent than in SrO.

  13. Electron beam induced conductivity effect of polymer resists and charging induced electron beam deflection simulation in electron beam lithography

    NASA Astrophysics Data System (ADS)

    Hwu, Justin Jia-Jen

    2000-10-01

    The electron beam induced conductivity (EBIC) effect of polymer materials was investigated and three electron beam resists, PBS, EBR900, and ZEP7000, were used as target materials in this research. An external bias method was applied for the direct measurements of EBIC current and the EBIC conductivity was then derived. The temperature effect on EBIC was illustrated by EBR900 and a simple single trap level analysis gave good agreement in explanation of initial state conductivity dependence on temperature change. The dependence of initial state EBIC values on dose rates and bias was also determined and an empirical from of EBIC-bias relationship was established for the electron beam deflection modeling. The long term EBIC characteristics of resists were investigated under different dose rates. The variation of EBIC versus time was explained by a transient theory that considers rates of carrier generation, carrier trapping, carrier detrapping, and carrier recombination contribution. The trapping model analysis on steady state EBIC results revealed that PBS has a uniform distribution of traps, while EBR900 and ZEP7000 fall in the same category that has exponential distribution of traps. The steady state EBIC gain was also determined for the three resists and the onset of the plasma region was observed for EBR900 and ZEP7000. A simulation model for the calculation of electron beam deflection owing to resist charging was developed in the second part of this research. Charging patterns of circles and squares of different dimensions were considered. Both SIMION and MATHEMATICA were used as simulation tools and the limitation of SIMION was illustrated and discussed. The model programmed in MATHEMATICA simulated electron beam deflection during e-beam writing. With the combination of the empirical EBIC-bias relationship of EBR900, the model simulated surface potential decay after irradiation and the results showed good agreement with literature values. The extent of

  14. Spin-split conduction band in EuB6 and tuning of half-metallicity with external stimuli

    NASA Astrophysics Data System (ADS)

    Kim, Jungho; Ku, Wei; Lee, Chi-Cheng; Ellis, D. S.; Cho, B. K.; Said, A. H.; Shvyd'ko, Y.; Kim, Young-June

    2013-04-01

    We report an Eu L3-edge resonant inelastic x-ray scattering (RIXS) investigation of the electronic structure of EuB6. We observe that the RIXS spectral weight around 1.1 eV increases dramatically when the system is cooled below the ferromagnetic ordering temperature and follows the magnetic order parameter. This spectral feature is attributed to the intersite excitation from the local 4f orbital to the spin-split 5d orbital on the neighboring site, illustrating the essential role of exchange splitting of the conducting electrons. Based on our density functional theory calculations and the RIXS data, EuB6 at low temperature can be consistently described with a semimetallic electronic structure with incomplete spin polarization. We propose that half-metallicity in EuB6 can be achieved utilizing the strong tunability of the electronic structure against gate voltage, strain, and magnetic field.

  15. Electronically conductive polymer binder for lithium-ion battery electrode

    SciTech Connect

    Liu, Gao; Battaglia, Vincent S.; Park, Sang -Jae

    2015-10-06

    A family of carboxylic acid groups containing fluorene/fluorenon copolymers is disclosed as binders of silicon particles in the fabrication of negative electrodes for use with lithium ion batteries. Triethyleneoxide side chains provide improved adhesion to materials such as, graphite, silicon, silicon alloy, tin, tin alloy. These binders enable the use of silicon as an electrode material as they significantly improve the cycle-ability of silicon by preventing electrode degradation over time. In particular, these polymers, which become conductive on first charge, bind to the silicon particles of the electrode, are flexible so as to better accommodate the expansion and contraction of the electrode during charge/discharge, and being conductive promote the flow battery current.

  16. Electronically conductive polymer binder for lithium-ion battery electrode

    SciTech Connect

    Liu, Gao; Xun, Shidi; Battaglia, Vincent S.; Zheng, Honghe; Wu, Mingyan

    2015-07-07

    A family of carboxylic acid groups containing fluorene/fluorenon copolymers is disclosed as binders of silicon particles in the fabrication of negative electrodes for use with lithium ion batteries. Triethyleneoxide side chains provide improved adhesion to materials such as, graphite, silicon, silicon alloy, tin, tin alloy. These binders enable the use of silicon as an electrode material as they significantly improve the cycle-ability of silicon by preventing electrode degradation over time. In particular, these polymers, which become conductive on first charge, bind to the silicon particles of the electrode, are flexible so as to better accommodate the expansion and contraction of the electrode during charge/discharge, and being conductive promote the flow battery current.

  17. Mixed-ionic and electronic conductivity in polymers

    SciTech Connect

    Ratner, M.A.; Shriver, D.F.

    1991-01-01

    The aim in this portion of the research is to prepare new electroactive films with high ion mobility, and to characterize the transport properties of these materials. The classic conducting polymers, polyacetylene, polythiophene, and polypyrrole have dense structures that prevent rapid redox switching because of the low diffusivity of ions. The objective is to modify the last two polymers with pendant polyethers, which should greatly improve ion transport.

  18. 41 CFR 101-26.508 - Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... processing (EDP) tape and instrumentation tape (wide and intermediate band). 101-26.508 Section 101-26.508... Programs § 101-26.508 Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band). Procurement by Federal agencies of EDP tape and instrumentation tape (wide and intermediate...

  19. Electronic band structure imaging of three layer twisted graphene on single crystal Cu(111)

    SciTech Connect

    Marquez Velasco, J.; Kelaidis, N.; Xenogiannopoulou, E.; Tsoutsou, D.; Tsipas, P.; Speliotis, Th.; Pilatos, G.; Likodimos, V.; Falaras, P.; Dimoulas, A.; Raptis, Y. S.

    2013-11-18

    Few layer graphene (FLG) is grown on single crystal Cu(111) by Chemical Vapor Deposition, and the electronic valence band structure is imaged by Angle-Resolved Photo-Emission Spectroscopy. It is found that graphene essentially grows polycrystalline. Three nearly ideal Dirac cones are observed along the Cu Γ{sup ¯}K{sup ¯} direction in k-space, attributed to the presence of ∼4° twisted three layer graphene with negligible interlayer coupling. The number of layers and the stacking order are compatible with Raman data analysis demonstrating the complementarity of the two techniques for a more accurate characterization of FLG.

  20. First principles electronic band structure and phonon dispersion curves for zinc blend beryllium chalcogenide

    SciTech Connect

    Dabhi, Shweta Mankad, Venu Jha, Prafulla K.

    2014-04-24

    A detailed theoretical study of structural, electronic and Vibrational properties of BeX compound is presented by performing ab-initio calculations based on density-functional theory using the Espresso package. The calculated value of lattice constant and bulk modulus are compared with the available experimental and other theoretical data and agree reasonably well. BeX (X = S,Se,Te) compounds in the ZB phase are indirect wide band gap semiconductors with an ionic contribution. The phonon dispersion curves are represented which shows that these compounds are dynamically stable in ZB phase.

  1. Two-temperature models of old supernova remnants with ion and electron thermal conduction

    NASA Technical Reports Server (NTRS)

    Cui, Wei; Cox, Donald P.

    1992-01-01

    To investigate the potential effects thermal conduction may have on the evolution of old supernova remnants, we present the results of 1D (spherically symmetric) numerical simulations of a remnant in a homogeneous interstellar medium for four different cases: (1) without thermal conduction; (2) with both electron and ion thermal conduction assuming equal temperatures; (3) with electron thermal conduction only, following electron and ion temperatures separately; and (4) with both electron and ion thermal conduction following separate temperatures. We followed the entire evolution until the completion of the remnant bubble collapse. Our most significant result is that in remnant evolution studies concerned principally with either the shell or bubble evolution at late times, reasonable results are obtained with single-temperature models. When the electron and ion temperatures are followed separately, however, ion thermal conduction cannot safely be ignored.

  2. Corrected electron inelastic mean free paths (IMFPs) for selected wide band semiconductors

    NASA Astrophysics Data System (ADS)

    Krawczyk, M.

    2008-03-01

    Elastic peak electron spectroscopy (EPES) has been widely used to determine the electron inelastic mean free paths (IMFPs) in solids. In this work, we investigated quantitatively the influence of surface excitations on electron IMFPs determined by EPES. We used IMFPs obtained from the early EPES measurements of the electron elastic backscattering probability from GaN and Cd0.88Mn0.12 Te wideband-gap semiconductors, and the Ni standard in the energy range 200-2000 eV. The total surface-excitation parameter (SEP) was evaluated using Chen and Werner approaches, and was applied for correcting the EPES IMFPs. These corrected values were then compared with those predicted by the TPP-2M formula. We found that implementation of the surface-excitation correction improved agreement between the resulting IMFPs for selected wide band semiconductors and the TPP-2M values at low-energy (E > 500 eV) electrons. The extent to which the IMFPs measured by EPES differ from the corresponding bulk values (on account of surface excitations) was found to depend on the semiconductor material with finite surface. Our results also clearly demonstrated the importance of accounting for surface excitations for accuracy of the IMFPs measured for GaN.

  3. Soft capacitor fibers using conductive polymers for electronic textiles

    NASA Astrophysics Data System (ADS)

    Gu, Jian Feng; Gorgutsa, Stephan; Skorobogatiy, Maksim

    2010-11-01

    A novel, highly flexible, conductive polymer-based fiber with high electric capacitance is reported. In its cross section the fiber features a periodic sequence of hundreds of conductive and isolating plastic layers positioned around metallic electrodes. The fiber is fabricated using the fiber drawing method, where a multi-material macroscopic preform is drawn into a sub-millimeter capacitor fiber in a single fabrication step. Several kilometers of fibers can be obtained from a single preform with fiber diameters ranging between 500 and 1000 µm. A typical measured capacitance of our fibers is 60-100 nF m-1 and it is independent of the fiber diameter. Analysis of the fiber frequency response shows that in its simplest interrogation mode the capacitor fiber has a transverse resistance of 5 kΩ m L-1, which is inversely proportional to the fiber length L and is independent of the fiber diameter. Softness of the fiber materials, the absence of liquid electrolyte in the fiber structure, ease of scalability to large production volumes and high capacitance of our fibers make them interesting for various smart textile applications ranging from distributed sensing to energy storage.

  4. Flat electronic bands in fractal-kagomé network and the effect of perturbation

    NASA Astrophysics Data System (ADS)

    Nandy, Atanu; Chakrabarti, Arunava

    2016-05-01

    We demonstrate an analytical prescription of demonstrating the flat band [FB] states in a fractal incorporated kagomé type network that can give rise to a countable infinity of flat non-dispersive eigenstates with a multitude of localization area. The onset of localization can, in principle, be delayed in space by an appropriate choice of energy regime. The length scale, at which the onset of localization for each mode occurs, can be tuned at will following the formalism developed within the framework of real space renormalization group. This scheme leads to an exact determination of energy eigenvalue for which one can have dispersionless flat electronic bands. Furthermore, we have shown the effect ofuniform magnetic field for the same non-translationally invariant network model that has ultimately led to an`apparent invisibility' of such staggered localized states and to generate absolutely continuous sub-bands in the energy spectrum and again an interesting re-entrant behavior of those FB states.

  5. Energy band alignment and electronic states of amorphous carbon surfaces in vacuo and in aqueous environment

    NASA Astrophysics Data System (ADS)

    Caro, Miguel A.; Määttä, Jukka; Lopez-Acevedo, Olga; Laurila, Tomi

    2015-01-01

    In this paper, we obtain the energy band positions of amorphous carbon (a-C) surfaces in vacuum and in aqueous environment. The calculations are performed using a combination of (i) classical molecular dynamics (MD), (ii) Kohn-Sham density functional theory with the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional, and (iii) the screened-exchange hybrid functional of Heyd, Scuseria, and Ernzerhof (HSE). PBE allows an accurate generation of a-C and the evaluation of the local electrostatic potential in the a-C/water system, HSE yields an improved description of energetic positions which is critical in this case, and classical MD enables a computationally affordable description of water. Our explicit calculation shows that, both in vacuo and in aqueous environment, the a-C electronic states available in the region comprised between the H2/H2O and O2/H2O levels of water correspond to both occupied and unoccupied states within the a-C pseudogap region. These are localized states associated to sp2 sites in a-C. The band realignment induces a shift of approximately 300 meV of the a-C energy band positions with respect to the redox levels of water.

  6. Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths

    PubMed Central

    Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

    2015-01-01

    The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm. PMID:26563679

  7. All-electron GW quasiparticle band structures of group 14 nitride compounds

    NASA Astrophysics Data System (ADS)

    Chu, Iek-Heng; Kozhevnikov, Anton; Schulthess, Thomas C.; Cheng, Hai-Ping

    2014-07-01

    We have investigated the group 14 nitrides (M3N4) in the spinel phase (γ-M3N4 with M = C, Si, Ge, and Sn) and β phase (β-M3N4 with M = Si, Ge, and Sn) using density functional theory with the local density approximation and the GW approximation. The Kohn-Sham energies of these systems have been first calculated within the framework of full-potential linearized augmented plane waves (LAPW) and then corrected using single-shot G0W0 calculations, which we have implemented in the modified version of the Elk full-potential LAPW code. Direct band gaps at the Γ point have been found for spinel-type nitrides γ-M3N4 with M = Si, Ge, and Sn. The corresponding GW-corrected band gaps agree with experiment. We have also found that the GW calculations with and without the plasmon-pole approximation give very similar results, even when the system contains semi-core d electrons. These spinel-type nitrides are novel materials for potential optoelectronic applications because of their direct and tunable band gaps.

  8. Energy band alignment and electronic states of amorphous carbon surfaces in vacuo and in aqueous environment

    SciTech Connect

    Caro, Miguel A.; Määttä, Jukka; Lopez-Acevedo, Olga; Laurila, Tomi

    2015-01-21

    In this paper, we obtain the energy band positions of amorphous carbon (a–C) surfaces in vacuum and in aqueous environment. The calculations are performed using a combination of (i) classical molecular dynamics (MD), (ii) Kohn-Sham density functional theory with the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional, and (iii) the screened-exchange hybrid functional of Heyd, Scuseria, and Ernzerhof (HSE). PBE allows an accurate generation of a-C and the evaluation of the local electrostatic potential in the a-C/water system, HSE yields an improved description of energetic positions which is critical in this case, and classical MD enables a computationally affordable description of water. Our explicit calculation shows that, both in vacuo and in aqueous environment, the a-C electronic states available in the region comprised between the H{sub 2}/H{sub 2}O and O{sub 2}/H{sub 2}O levels of water correspond to both occupied and unoccupied states within the a-C pseudogap region. These are localized states associated to sp{sup 2} sites in a-C. The band realignment induces a shift of approximately 300 meV of the a-C energy band positions with respect to the redox levels of water.

  9. All-electron GW quasiparticle band structures of group 14 nitride compounds

    SciTech Connect

    Chu, Iek-Heng; Cheng, Hai-Ping; Kozhevnikov, Anton; Schulthess, Thomas C.

    2014-07-28

    We have investigated the group 14 nitrides (M{sub 3}N{sub 4}) in the spinel phase (γ-M{sub 3}N{sub 4} with M = C, Si, Ge, and Sn) and β phase (β-M{sub 3}N{sub 4} with M = Si, Ge, and Sn) using density functional theory with the local density approximation and the GW approximation. The Kohn-Sham energies of these systems have been first calculated within the framework of full-potential linearized augmented plane waves (LAPW) and then corrected using single-shot G{sub 0}W{sub 0} calculations, which we have implemented in the modified version of the Elk full-potential LAPW code. Direct band gaps at the Γ point have been found for spinel-type nitrides γ-M{sub 3}N{sub 4} with M = Si, Ge, and Sn. The corresponding GW-corrected band gaps agree with experiment. We have also found that the GW calculations with and without the plasmon-pole approximation give very similar results, even when the system contains semi-core d electrons. These spinel-type nitrides are novel materials for potential optoelectronic applications because of their direct and tunable band gaps.

  10. Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

    PubMed

    Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

    2015-01-01

    The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm. PMID:26563679

  11. Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

    2015-11-01

    The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

  12. Electronic structure, conductivity and superconductivity of metal doped C60

    SciTech Connect

    Haddon, R.C.

    1993-12-31

    The curvature and topology required for fullerene formation strongly enhances the electronegativity of the carbon clusters and as a result C60 readily accepts electrons. Solid C60 undergoes doping with a variety of metals to produce intercalation compounds which are conductors. In the case of the alkali metals the predominant phases present are: C60, A3C60, and A6C60. The A3C60 compounds are formed from C60 by occupancy of the interstitial sites of the fcc lattice. These phases constitute the first 3-dimensional organic conductors and for A=K, Rb the A3C60 compounds are superconductors with transition temperatures of Tc=19 and 28K, respectively. There is evidence to suggest that the superconductivity in these systems is driven by the intramolecular vibrations of the reduced C60 molecule. Recent experiments on a variety of metal doped C60 thin films will be presented.

  13. Theoretical and experimental studies on wide-band-gap p-type conductive BaCuSeF and related compounds

    NASA Astrophysics Data System (ADS)

    Sakakima, Hiroshi; Nishitani, Mikihiko; Yamamoto, Koichi; Wada, Takahiro

    2015-08-01

    BaCuSeF and related compounds, MCuQF (M = Ba, Sr; Q = Se, S), are known to show p-type conduction. The formation energies of the Cu vacancy ΔH[VCu] in a MCuQF system were computed by first-principles calculation with a generalized gradient approximation (GGA) of the Perdew-Burke-Ernzerhof (PBE) functional as an electron exchange and correlation functional. The density of states (DOS) of BaCuSeF was calculated with the hybrid functional of Heyd-Scuseria-Ernzerhof (HSE) 06. ΔH[VCu] was found to be very small under both the Cu- and Q-rich conditions, which probably contributes to p-type conduction. The electronic structure of BaCuSeF was studied by X-ray photoelectron spectroscopy (XPS) with UV photoelectron yield spectroscopy (UVPYS) and photoemission yield spectroscopy (PYS). The determined depth of the top of the valence band relative to the vacuum level was about 4.9 eV. This value is desirable for applications in compound semiconductor thin-film tandem solar cells since the absorbers of polycrystalline thin-film solar cells, such as CdTe and Cu(In,Ga)Se2, are p-type semiconductors. The DOS of BaCuSeF calculated with the HSE06 functional was almost consistent with the XPS spectrum.

  14. A research of W-band folded waveguide traveling wave tube with elliptical sheet electron beam

    SciTech Connect

    Guo Guo; Wei Yanyu; Yue Lingna; Gong Yubin; Zhao Guoqing; Huang Minzhi; Tang Tao; Wang Wenxiang

    2012-09-15

    Folded waveguide (FWG) traveling wave tube (TWT), which shows advantages in high power capacity, moderate bandwidth, and low-cost fabrication, has become the focus of vacuum electronics recently. Sheet electron beam devices are better suited for producing radiation sources with large power in millimeter wave spectrum due to their characteristics of relatively low space charge fields and large transport current. A FWG TWT with elliptical sheet beam working in W-band is presented in this paper, with the analysis of its dispersion characteristics, coupling impedance, transmission properties, and interaction characteristics. A comparison is also made with the traditional FWG TWT. Simulation results lead to the conclusion that the FWG TWT with elliptical sheet beam investigated in this paper can make full use of relatively large electric fields and thus generate large output power with the same electric current density.

  15. Giant amplification in degenerate band edge slow-wave structures interacting with an electron beam

    NASA Astrophysics Data System (ADS)

    Othman, Mohamed A. K.; Veysi, Mehdi; Figotin, Alexander; Capolino, Filippo

    2016-03-01

    We propose a new amplification regime based on a synchronous operation of four degenerate electromagnetic (EM) modes in a slow-wave structure and the electron beam, referred to as super synchronization. These four EM modes arise in a Fabry-Pérot cavity when degenerate band edge (DBE) condition is satisfied. The modes interact constructively with the electron beam resulting in superior amplification. In particular, much larger gains are achieved for smaller beam currents compared to conventional structures based on synchronization with only a single EM mode. We demonstrate giant gain scaling with respect to the length of the slow-wave structure compared to conventional Pierce type single mode traveling wave tube amplifiers. We construct a coupled transmission line model for a loaded waveguide slow-wave structure exhibiting a DBE, and investigate the phenomenon of giant gain via super synchronization using the Pierce model generalized to multimode interaction.

  16. High-Pressure and Electronic Band Structure Studies on MoBC

    NASA Astrophysics Data System (ADS)

    Falconi, R.; de la Mora, P.; Morales, F.; Escamilla, R.; Camacho, C. O.; Acosta, M.; Escudero, R.

    2015-05-01

    In this work, high-pressure electrical resistivity measurements and electronic structure analysis on the intermetallic MoBC system are presented. Electrical resistivity measurements up to about 5 GPa using a diamond anvil cell on MoBC revealed that decreases in a non-monotonic way. Using Linearized Augmented Plane Wave method based on Density Functional Theory, we investigate the changes in the electronic structure of this compound as a function of pressure. The states at the Fermi level mainly come from the d orbitals of molybdenum atoms. As the pressure increases, the band width is enhanced and the total density of states at the Fermi level decreases. The Fermi surface for this compound possesses a two-dimensional character which prevails under an applied pressure of about 10 GPa. The results are compared with the chemical pressure effects on induced by the gradual and non-simultaneous elimination of B and C in the compound.

  17. Microwave band on-chip coil technique for single electron spin resonance in a quantum dot.

    PubMed

    Obata, Toshiaki; Pioro-Ladrière, Michel; Kubo, Toshihiro; Yoshida, Katsuharu; Tokura, Yasuhiro; Tarucha, Seigo

    2007-10-01

    Microwave band on-chip microcoils are developed for the application to single electron spin resonance measurement with a single quantum dot. Basic properties such as characteristic impedance and electromagnetic field distribution are examined for various coil designs by means of experiment and simulation. The combined setup operates relevantly in the experiment at dilution temperature. The frequency responses of the return loss and Coulomb blockade current are examined. Capacitive coupling between a coil and a quantum dot causes photon assisted tunneling, whose signal can greatly overlap the electron spin resonance signal. To suppress the photon assisted tunneling effect, a technique for compensating for the microwave electric field is developed. Good performance of this technique is confirmed from measurement of Coulomb blockade oscillations. PMID:17979446

  18. Physical properties and electronic band structure of noncentrosymmetric Th7Co3 superconductor.

    PubMed

    Sahakyan, M; Tran, V H

    2016-05-25

    The physical properties of the noncentrosymmetric superconductor Th7Co3 have been investigated by means of ac-magnetic susceptibility, magnetization, specific heat, electrical resistivity, magnetoresistance and Hall effect measurements. From these data it is established that Th7Co3 is a dirty type-II superconductor with [Formula: see text] K, [Formula: see text] and moderate electron-phonon coupling [Formula: see text]. Some evidences for anisotropic superconducting gap are found, including e.g. reduced specific heat jump ([Formula: see text]) at T c, diminished superconducting energy gap ([Formula: see text]) as compared to the BCS values, power law field dependence of the Sommerfeld coefficient at 0.4 K ([Formula: see text]), and a concave curvature of the [Formula: see text] line. The magnitudes of the thermodynamic critical field and the energy gap are consistent with mean-squared anisotropy parameter [Formula: see text]. The electronic specific heat in the superconducting state is reasonably fitted to an oblate spheroidal gap model. Calculations of scalar relativistic and fully relativistic electronic band structures reveal considerable differences in the degenerate structure, resulting from asymmetric spin-orbit coupling (ASOC). A large splitting energy of spin-up spin-down bands at the Fermi level E F, [Formula: see text] meV is observed and a sizeable ratio [Formula: see text] could classify the studied compound into the class of noncentrosymmetric superconductors with strong ASOC. The noncentrosymmetry of the crystal structure and the atomic relativistic effects are both responsible for an importance of ASOC in Th7Co3. The calculated results for the density of states show a Van Hove singularity just below E F and dominant role of the 6d electrons of Th to the superconductivity. PMID:27120582

  19. Electronic and thermoelectric properties of Mexican hat bands in van-der-Waals materials

    NASA Astrophysics Data System (ADS)

    Wickramaratne, Darshana; Zahid, Ferdows; Lake, Roger

    2015-03-01

    Mexican hat dispersions are relatively common in few-layer two-dimensional materials. In one to four monolayers of the group-III chalcogenides (GaS, GaSe, InS, InSe) and Bi2Se3 the valence band undergoes a band inversion from a parabolic to an inverted Mexican hat dispersion as the film thickness is reduced from bulk to a single monolayer. The band inversion is robust against changes in stacking order, omission or inclusion of spin-orbit coupling and the choice of functional. The Mexican hat dispersion results in a 1/√{ E} singularity in the two-dimensional density of states and a step-function turn on in the density of modes. The largest radius of the ring of states occurs for a single monolayer of each material. The dispersion with the largest radius coincides with the maximum power factor and ZT for a material at room temperature. Ab-initio electronic structure calculations are used with a Landauer approach to calculate the thermoelectric transport coefficients. Analytical models of the Mexican hat and the parabolic dispersions are used for comparison and analysis. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring this effect since the radius of the Mexican hat band edge increases linearly with vertical electric field. Support by the NSF and SRC-NRI Project 2204.001 (NSF-ECCS-1124733), FAME, one of six centers of STARnet, a SRC program sponsored by MARCO and DARPA and the use of XSEDE NSF Grant # OCI-1053575.

  20. Electronic band structure calculation of GaNAsBi alloys and effective mass study

    NASA Astrophysics Data System (ADS)

    Habchi, M. M.; Ben Nasr, A.; Rebey, A.; El Jani, B.

    2013-11-01

    Electronic band structures of GaNxAs1-x-yBiy dilute nitrides-bismides have been determined theoretically within the framework of the band anticrossing (BAC) model and k ṡ p method. We have developed computer codes based on our extended BAC model, denoted (16 × 16), in which the dimension of the used states basis was equal to 16. We have investigated the band gap and the spin orbit splitting as a function of Bi composition for alloys lattice matched to GaAs. We have found that the substitution of As element by N and Bi impurities leads to a significant reduction of band gap energy by roughly 198 meV/%Bi. Meanwhile, spin orbit splitting increases by 56 meV/%Bi regardless N content. There is an excellent agreement between the model predictions and experiment reported in the literature. In addition, alloys compositions and oscillator strengths of transition energies have been calculated for GaNAsBi alloys which represent active zone of temperature insensitive (1.55 μm and 1.3 μm) wavelength laser diodes intended for optical fiber communications. A crossover at about 0.6 eV has occurred between Eg and Δso of GaN.039As.893Bi.068. When the quaternary is lattice mismatched to GaAs, resonance energy increases with Bi content if N content decreases. On the other hand, effective mass behavior of carriers at Γ point has been discussed with respect to alloy composition, k-directions and lattice mismatch.

  1. Electronic band structure of CaUO{sub 4} from first principles

    SciTech Connect

    Matar, S.F.; Demazeau, G.

    2009-10-15

    Band theoretical results are presented on calcium uranate, CaUO{sub 4}, based on computations within the density functional theory. From pseudo-potential calculations the equation of state is obtained with equilibrium lattice properties in agreement with experiment. For isotropic volume change the bulk modulus amounts to 180 GPa but a much higher value is found for anisotropic compression along the hexagonal c-axis. This is assigned to the short U-O distances in linear uranyl polycation. Scalar relativistic all-electron calculations point to a semiconductor with {approx}3eV band gap. From density of states, chemical bonding and electron localization function ELF, oxygen is found to behave both as ionic and covalent in the coordination sphere of uranium. The results provide an illustration of the peculiar role of uranyl cation UO{sub 2}{sup 2+} according to its chemical environment. - Energy versus volume variation for isotropic and anisotropic compressions within CaUO{sub 4}. Fit results with Birch EOS are given in inserts.

  2. Band-structure-based collisional model for electronic excitations in ion-surface collisions

    SciTech Connect

    Faraggi, M.N.; Gravielle, M.S.; Alducin, M.; Silkin, V.M.; Juaristi, J.I.

    2005-07-15

    Energy loss per unit path in grazing collisions with metal surfaces is studied by using the collisional and dielectric formalisms. Within both theories we make use of the band-structure-based (BSB) model to represent the surface interaction. The BSB approach is based on a model potential and provides a precise description of the one-electron states and the surface-induced potential. The method is applied to evaluate the energy lost by 100 keV protons impinging on aluminum surfaces at glancing angles. We found that when the realistic BSB description of the surface is used, the energy loss obtained from the collisional formalism agrees with the dielectric one, which includes not only binary but also plasmon excitations. The distance-dependent stopping power derived from the BSB model is in good agreement with available experimental data. We have also investigated the influence of the surface band structure in collisions with the Al(100) surface. Surface-state contributions to the energy loss and electron emission probability are analyzed.

  3. Shallow electron traps in alkali halide crystals: Mollwo-Ivey relations of the optical absorption bands

    NASA Astrophysics Data System (ADS)

    Ziraps, Valters

    2001-03-01

    Evidences are given that two classes of the transient IR- absorption bands: (a) with max. at 0.27-0.36 eV in NaCl, KCl, KBr, KI and RbCl (due to shallow electron traps according G. Jacobs or due to bound polarons according E.V. Korovkin and T.A. Lebedkina) and (b) with max. at 0.15-0.36 eV in NaI, NaBr, NaCl:I, KCl:I, RbCl:I and RbBr:I (due to on-center STE localized at iodine dimer according M. Hirai and collaborators) are caused by the same defect- atomic alkali impurity center [M+]c0e- (electron e- trapped by a substitutional smaller size alkali cation impurity [M+]c0). The Mollwo-Ivey plots (for the transient IR-absorption bands) of the zero-phonon line energy E0 (for NaCl, KCl, KBr, RbCl and NaBr, KCl:I) and/or the low-energy edge valued E0 (for NaI, RbCl:I, RbBr:I) versus anion-cation distance (d) evidence that two types of the [M+]c0e- centers are predominant: (a) [Na+]c0e- in the KX and RbX host crystals with the relation E0approximately equals 6.15/d2.74, (b) [Li+]c03- in the NaX host crystals - E0approximately equals 29.4/d4.72. The Mollwo-Ivey relation E0approximately equals 18.36/d(superscript 2.70 is fulfilled as well for the F' band in NaCl, KCl, KBr, KI, RbCl, RbI if we use the F' center optical binding energy values E0.

  4. Manifestation of Structure of Electron Bands in Double-Resonant Raman Spectra of Single-Walled Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Stubrov, Yurii; Nikolenko, Andrii; Gubanov, Viktor; Strelchuk, Viktor

    2016-01-01

    Micro-Raman spectra of single-walled carbon nanotubes in the range of two-phonon 2D bands are investigated in detail. The fine structure of two-phonon 2D bands in the low-temperature Raman spectra of the mixture and individual single-walled carbon nanotubes is considered as the reflection of structure of their π-electron zones. The dispersion behavior of 2D band fine structure components in the resonant Raman spectra of single-walled carbon nanotube mixture is studied depending on the energy of excitating photons. The role of incoming and outgoing electron-phonon resonances in the formation of 2D band fine structure in Raman spectra of single-walled carbon nanotubes is analyzed. The similarity of dispersion behavior of 2D phonon bands in single-walled carbon nanotubes, one-layer graphene, and bulk graphite is discussed.

  5. Manifestation of Structure of Electron Bands in Double-Resonant Raman Spectra of Single-Walled Carbon Nanotubes.

    PubMed

    Stubrov, Yurii; Nikolenko, Andrii; Gubanov, Viktor; Strelchuk, Viktor

    2016-12-01

    Micro-Raman spectra of single-walled carbon nanotubes in the range of two-phonon 2D bands are investigated in detail. The fine structure of two-phonon 2D bands in the low-temperature Raman spectra of the mixture and individual single-walled carbon nanotubes is considered as the reflection of structure of their π-electron zones. The dispersion behavior of 2D band fine structure components in the resonant Raman spectra of single-walled carbon nanotube mixture is studied depending on the energy of excitating photons. The role of incoming and outgoing electron-phonon resonances in the formation of 2D band fine structure in Raman spectra of single-walled carbon nanotubes is analyzed. The similarity of dispersion behavior of 2D phonon bands in single-walled carbon nanotubes, one-layer graphene, and bulk graphite is discussed. PMID:26729220

  6. Low-dimensional transport and large thermoelectric power factors in bulk semiconductors by band engineering of highly directional electronic states.

    PubMed

    Bilc, Daniel I; Hautier, Geoffroy; Waroquiers, David; Rignanese, Gian-Marco; Ghosez, Philippe

    2015-04-01

    Thermoelectrics are promising for addressing energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures and the introduction of resonant states were suggested as possible solutions to this paradox, but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly directional character of some orbitals to engineer the band structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principle calculations, the theoretical concept is demonstrated in Fe2YZ Heusler compounds, yielding power factors 4 to 5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting, or photovoltaic applications. PMID:25884131

  7. Electron beam treatment of non-conducting materials by a fore-pump-pressure plasma-cathode electron beam source

    NASA Astrophysics Data System (ADS)

    Burdovitsin, V. A.; Klimov, A. S.; Medovnik, A. V.; Oks, E. M.

    2010-10-01

    In the irradiation of an insulated target by an electron beam produced by a plasma-cathode electron beam source operating in the fore-vacuum pressure range (5-15 Pa), the target potential is much lower than the electron beam energy, offering the possibility of direct electron treatment of insulating materials. It is found that in the electron beam irradiation of a non-conducting target in a moderately high pressure range, the electron charge on the target surface is neutralized mainly by ions from a volume discharge established between the negatively charged target surface and the grounded walls of the vacuum chamber. This allows the possibility of direct electron beam treatment (heating, melting, welding) of ceramics and other non-conducting and semiconductor materials.

  8. The Green's function density functional tight-binding (gDFTB) method for molecular electronic conduction.

    PubMed

    Reimers, Jeffrey R; Solomon, Gemma C; Gagliardi, Alessio; Bilić, Ante; Hush, Noel S; Frauenheim, Thomas; Di Carlo, Aldo; Pecchia, Alessandro

    2007-07-01

    A review is presented of the nonequilibrium Green's function (NEGF) method "gDFTB" for evaluating elastic and inelastic conduction through single molecules employing the density functional tight-binding (DFTB) electronic structure method. This focuses on the possible advantages that DFTB implementations of NEGF have over conventional methods based on density functional theory, including not only the ability to treat large irregular metal-molecule junctions with high nonequilibrium thermal distributions but perhaps also the ability to treat dispersive forces, bond breakage, and open-shell systems and to avoid large band lineup errors. New results are presented indicating that DFTB provides a useful depiction of simple gold-thiol interactions. Symmetry is implemented in DFTB, and the advantages it brings in terms of large savings of computational resources with significant increase in numerical stability are described. The power of DFTB is then harnessed to allow the use of gDFTB as a real-time tool to discover the nature of the forces that control inelastic charge transport through molecules and the role of molecular symmetry in determining both elastic and inelastic transport. Future directions for the development of the method are discussed. PMID:17530826

  9. Band-like transport, high electron mobility and high photoconductivity in all-inorganic nanocrystal arrays.

    PubMed

    Lee, Jong-Soo; Kovalenko, Maksym V; Huang, Jing; Chung, Dae Sung; Talapin, Dmitri V

    2011-06-01

    Flexible, thin-film electronic and optoelectronic devices typically involve a trade-off between performance and fabrication cost. For example, solution-based deposition allows semiconductors to be patterned onto large-area substrates to make solar cells and displays, but the electron mobility in solution-deposited semiconductor layers is much lower than in semiconductors grown at high temperatures from the gas phase. Here, we report band-like electron transport in arrays of colloidal cadmium selenide nanocrystals capped with the molecular metal chalcogenide complex In(2)Se(4)(2-), and measure electron mobilities as high as 16 cm(2) V(-1) s(-1), which is about an order of magnitude higher than in the best solution-processed organic and nanocrystal devices so far. We also use CdSe/CdS core-shell nanoparticles with In(2)Se(4)(2-) ligands to build photodetectors with normalized detectivity D* > 1 × 10(13) Jones (I Jones = 1 cm Hz(1/2) W(-1)), which is a record for II-VI nanocrystals. Our approach does not require high processing temperatures, and can be extended to different nanocrystals and inorganic surface ligands. PMID:21516091

  10. Temperature dependence of band gaps in semiconductors: Electron-phonon interaction

    NASA Astrophysics Data System (ADS)

    Bhosale, J.; Ramdas, A. K.; Burger, A.; Muñoz, A.; Romero, A. H.; Cardona, M.; Lauck, R.; Kremer, R. K.

    2012-11-01

    We have theoretically investigated, by ab initio techniques, the phonon properties of several semiconductors with chalcopyrite structure. Comparison with experiments has led us to distinguish between materials with d electrons in the valence band (e.g., CuGaS2, AgGaS2) and those without d electrons (e.g., ZnSnAs2). The former exhibit a rather peculiar nonmonotonic temperature dependence of the energy gap which, so far, has resisted cogent theoretical description. We analyze this nonmonotonic temperature dependence by fitting two Bose-Einstein oscillators with weights of opposite sign leading to an increase at low temperatures and a decrease at higher temperatures and find that the energy of the former correlates well with characteristic peaks in the phonon density of states associated with low-energy vibrations of the d-electron elements. We hope that this work will encourage theoretical investigations of the electron-phonon interaction in this direction, especially of the current ab initio type.

  11. p-type conductivity in wide-band-gap BaCuQF (Q=S,Se)

    NASA Astrophysics Data System (ADS)

    Yanagi, Hiroshi; Tate, Janet; Park, Sangmoon; Park, Cheol-Hee; Keszler, Douglas A.

    2003-04-01

    BaCuQF (Q=S,Se) materials, candidate transparent p-type conductors, were prepared by solid-state reaction, and their bulk electrical and optical properties were evaluated. The room-temperature Seebeck coefficient and electrical conductivity of undoped BaCuQF pellets were +56 μV/K and 0.088 S/cm, respectively, for the sulfide fluoride, and +32 μV/K and 0.061 S/cm, respectively, for the selenide fluoride. The conductivity was greatly enhanced by the substitution of several percent of K for Ba; the highest conductivities were 82 S/cm for Ba0.9K0.1CuSF and 43 S/cm for Ba0.9K0.1SeF. The band gaps for Q=S and Q=Se were measured to be 3.2 and 3.0 eV, respectively. Undoped BaCuSF exhibits strong red luminescence near 630 nm under ultraviolet excitation.

  12. Multi-band analysis of temperature-dependent transport coefficients (conductivity, Hall, Seebeck, and Nernst) of Ni-doped CoSb3

    NASA Astrophysics Data System (ADS)

    Kajikawa, Y.

    2016-02-01

    The experimental data on the temperature dependence of the four transport coefficients, i.e., the electrical conductivity (σ), Hall coefficient (RH), Seebeck coefficient (S), and Nernst coefficient (Q), of n-type Co0.999Ni0.001Sb3 reported by Sun et al. [Nat. Commun. 6, 7475 (2015)] have been analyzed in a multi-band model, especially focusing on the low temperature data. The multi-band model includes not only the lowest valley of the conduction band at the Γ point but also satellite valleys at the second minima together with an impurity band. The lowest valley at the Γ point is assumed to split into the c1 band and the spin-orbit split-off (so) band. For the analysis, the general expression of the Nernst coefficient in the multi-band model is derived. At such low temperatures that the other bands than the c1 and the impurity band can be neglected, this expression is shown to be approximated as the sum of three terms: the intrinsic terms due to the Nernst coefficients in the two bands themselves and a cross term proportional to the difference of Seebeck coefficients between the two bands. As a result of the analysis, it is proved that the anomalous positive peak of S(T) observed around T = 20 K as well as the sharp rise of the Hall mobility observed from 15 K to 40 K are due to the transition from hopping conduction in the impurity band to conduction in the c1 band. On the other hand, the pronounced peak of Q(T) observed slightly below 40 K is proved to be due to the cross term between the impurity band and the c1 band. In addition, a shoulder of Q(T) appeared around T = 80 K lends clear evidence of the existence of the so band, while the increase in both of σ(T) and | S ( T ) | above 150 K suggests the existence of the satellite valleys.

  13. Transition-metal-substituted indium thiospinels as novel intermediate-band materials: prediction and understanding of their electronic properties.

    PubMed

    Palacios, P; Aguilera, I; Sánchez, K; Conesa, J C; Wahnón, P

    2008-07-25

    Results of density-functional calculations for indium thiospinel semiconductors substituted at octahedral sites with isolated transition metals (M=Ti,V) show an isolated partially filled narrow band containing three t2g-type states per M atom inside the usual semiconductor band gap. Thanks to this electronic structure feature, these materials will allow the absorption of photons with energy below the band gap, in addition to the normal light absorption of a semiconductor. To our knowledge, we demonstrate for the first time the formation of an isolated intermediate electronic band structure through M substitution at octahedral sites in a semiconductor, leading to an enhancement of the absorption coefficient in both infrared and visible ranges of the solar spectrum. This electronic structure feature could be applied for developing a new third-generation photovoltaic cell. PMID:18764346

  14. Band Structure and Terahertz Optical Conductivity of Transition Metal Oxides: Theory and Application to CaRuO(3).

    PubMed

    Dang, Hung T; Mravlje, Jernej; Georges, Antoine; Millis, Andrew J

    2015-09-01

    Density functional plus dynamical mean field calculations are used to show that in transition metal oxides, rotational and tilting (GdFeO(3)-type) distortions of the ideal cubic perovskite structure produce a multiplicity of low-energy optical transitions which affect the conductivity down to frequencies of the order of 1 or 2 mV (terahertz regime), mimicking non-Fermi-liquid effects even in systems with a strictly Fermi-liquid self-energy. For CaRuO(3), a material whose measured electromagnetic response in the terahertz frequency regime has been interpreted as evidence for non-Fermi-liquid physics, the combination of these band structure effects and a renormalized Fermi-liquid self-energy accounts for the low frequency optical response which had previously been regarded as a signature of exotic physics. Signatures of deviations from Fermi-liquid behavior at higher frequencies (∼100  meV) are discussed. PMID:26382698

  15. Electronic structures, elastic properties, and minimum thermal conductivities of cermet M{sub 3}AlN

    SciTech Connect

    Wang, Jin; Chen, ZhiQian; Li, ChunMei; Li, Feng; Nie, ChaoYin

    2014-08-15

    The electronic structures and elastic anisotropies of cubic Ti{sub 3}AlN, Zr{sub 3}AlN, and Hf{sub 3}AlN are investigated by pseudopotential plane-wave method based on density functional theory. At the Fermi level, the electronic structures of these compounds are successive with no energy gap between conduct and valence bands, and exhibit metallicity in ground states. In valence band of each partial density of states, the different orbital electrons indicate interaction of corresponding atoms. In addition, the anisotropy of Hf{sub 3}AlN is found to be significantly different from that of Ti{sub 3}AlN and Zr{sub 3}AlN, which involve the differences in the bonding strength. It is notable that Hf{sub 3}AlN is a desired thermal barrier material with the lowest thermal conductivity at high temperature among the three compounds. - Graphical abstract: 1.Young's moduli of anti-perovskite Ti{sub 3}AlN, Zr{sub 3}AlN, and Hf{sub 3}AlN in full space. 2.Electron density differences on crystal planes (1 0 0), (2 0 0), and (1 1 0) of anti-perovskite Zr{sub 3}AlN. - Highlights: • We calculated three anti-perovskite cermets with first-principles theory. • We illustrated 3D Young modulus and found the anomalous anisotropy. • We explained the anomaly and calculated the minimum thermal conductivities.

  16. Temperature and donor concentration dependence of the conduction electron Lande g-factor in silicon

    NASA Astrophysics Data System (ADS)

    Konakov, Anton A.; Ezhevskii, Alexander A.; Soukhorukov, Andrey V.; Guseinov, Davud V.; Popkov, Sergey A.; Burdov, Vladimir A.

    2013-12-01

    Temperature and donor concentration dependence of the conduction electron g-factor in silicon has been investigated both experimentally and theoretically. We performed electron spin resonance experiments on Si samples doped with different densities of phosphorus and lithium. Theoretical consideration is based on the renormalization of the electron energy in a weak magnetic field by the interaction with possible perturbing agents, such as phonons and impurity centers. In the second-order perturbation theory interaction of the electron subsystem with the lattice vibrations as well as ionized donors results in decreasing the conduction electron g-factor, which becomes almost linear function both of temperature and impurity concentration.

  17. Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)

    SciTech Connect

    King, Sean W.; Nemanich, Robert J.; Davis, Robert F.

    2014-08-25

    In order to understand and predict the behavior of future scandium nitride (ScN) semiconductor heterostructure devices, we have utilized in situ x-ray and ultra-violet photoelectron spectroscopy to determine the valence band offset (VBO) present at ScN/3C-SiC (111) and 2H-GaN (0001)/ScN (111) interfaces formed by ammonia gas source molecular beam epitaxy. The ScN/3C-SiC (111) VBO was dependent on the ScN growth temperature and resistivity. VBOs of 0.4 ± 0.1 and 0.1 ± 0.1 eV were, respectively, determined for ScN grown at 925 °C (low resistivity) and 800 °C (high resistivity). Using the band-gaps of 1.6 ± 0.2 and 1.4 ± 0.2 eV previously determined by reflection electron energy loss spectroscopy for the 925 and 800 °C ScN films, the respective conduction band offsets (CBO) for these interfaces were 0.4 ± 0.2 and 0.9 ± 0.2 eV. For a GaN (0001) interface with 925 °C ScN (111), the VBO and CBO were similarly determined to be 0.9 ± 0.1 and 0.9 ± 0.2 eV, respectively.

  18. Temperature dependence of the optical band gap and electrical conductivity of sol-gel derived undoped and Li-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Caglar, Mujdat; Caglar, Yasemin; Aksoy, Seval; Ilican, Saliha

    2010-06-01

    Undoped and lithium (Li)-doped ZnO films were prepared by sol-gel method using spin coating technique. The effects of Li content on the crystallinity and morphological properties of ZnO films were assessed by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). XRD patterns of the films showed the hexagonal wurtzite type polycrystalline structure and that the incorporation of lithium leads to substantial changes in the structural characteristics of ZnO films. The SEM and AFM measurements showed that the surface morphology of the films was affected from the lithium incorporation. The wrinkle network was observed on the surface from both SEM and AFM results for undoped ZnO. The wrinkle structure disappeared with increasing Li content. The absorption spectra of the ZnO and 5% Li-doped ZnO (LZO5) films were carried out between 140 and 400 K temperatures. The optical band gap of ZnO and LZO5 films (calculated at various temperatures) showed a linear dependence on the temperature. The absolute zero value optical band gap and the rate of change of the band gap with temperature of the ZnO and LZO5 films were found to be 3.339 and 3.322 eV, and 2.95 × 10 -4 and 1.60 × 10 -4 eV/K, respectively. The transport mechanisms in the ZnO and LZO5 films have been investigated by analyzing of the temperature (80-300 K) dependence of the conductivity. The activation energies of the ZnO film increased with Li content.

  19. 8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

    SciTech Connect

    Gladysiewicz, M.; Wartak, M. S.; Kudrawiec, R.

    2015-08-07

    The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be used to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.

  20. Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru

    SciTech Connect

    Romaka, V. A.; Rogl, P.; Romaka, V. V.; Stadnyk, Yu. V.; Korzh, R. O.; Krayovskyy, V. Ya.; Horyn, A. M.

    2014-12-15

    The crystal and electronic structure and energy and kinetic properties of the n-HfNiSn semiconductor heavily doped with a Ru acceptor impurity are investigated in the temperature and Ru concentration ranges T = 80–400 K and N{sub A}{sup Ru} ≈ 9.5 × 10{sup 19}−5.7 × 10{sup 20} cm{sup −3} (x = 0–0.03), respectively. The mechanism of structural-defect generation is established, which changes the band gap and degree of compensation of the semiconductor and consists in the simultaneous concentration reduction and elimination of donor structural defects by means of the displacement of ∼1% of Ni atoms from the Hf (4a) positions, the generation of acceptor structural defects upon the substitution of Ru atoms for Ni atoms in the 4c positions, and the generation of donor defects in the form of vacancies in the Sn (4b) positions. The calculated electronic structure of HfNi{sub 1−x}Ru{sub x}Sn is consistent with the experiment. The results obtained are discussed within the Shklovsky-Efros model for a heavily doped and compensated semiconductor.

  1. Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped

    SciTech Connect

    Romaka, V. A.; Rogl, P.; Romaka, V. V.; Kaczorowski, D.; Stadnyk, Yu. V.; Korzh, R. O.; Krayovskyy, V. Ya.; Kovbasyuk, T. M.

    2015-03-15

    The crystal and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with a Lu acceptor impurity in the ranges T = 80–400 K and N{sub A}{sup Lu} ≈ 1.9 × 10{sup 20}−1.9 × 10{sup 21} cm{sup −3} (x = 0.01–0.10) at H ≤ 10 kG is studied. The nature of the structural-defect generation mechanism leading to changes in the band gap and the degree of semiconductor compensation is determined. Its essence is the simultaneous reduction and elimination of donor-type structural defects due to the displacement of ∼1% of Ni atoms from the Hf (4a) site, the generation of acceptor-type structural defects by substituting Ni atoms with Lu atoms at the 4c site, and the generation of donor-type defects such as vacancies at the Sn (4b) site. The results of calculations of the electronic structure of Hf{sub 1−x}Lu{sub x}NiSn are in agreement with experimental data. The results are discussed within the model of a heavily doped and compensated Shklovskii-Efros semiconductor.

  2. 41 CFR 101-26.508 - Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... Programs § 101-26.508 Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate... 41 Public Contracts and Property Management 2 2012-07-01 2012-07-01 false Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band). 101-26.508 Section...

  3. 41 CFR 101-26.508 - Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... Programs § 101-26.508 Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate... 41 Public Contracts and Property Management 2 2014-07-01 2012-07-01 true Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band). 101-26.508 Section...

  4. 41 CFR 101-26.508 - Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... Programs § 101-26.508 Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate... 41 Public Contracts and Property Management 2 2013-07-01 2012-07-01 true Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band). 101-26.508 Section...

  5. 41 CFR 101-26.508 - Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 41 Public Contracts and Property Management 2 2010-07-01 2010-07-01 true Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band). 101-26.508 Section 101-26.508... Programs § 101-26.508 Electronic data processing (EDP) tape and instrumentation tape (wide and...

  6. Localized conductive patterning via focused electron beam reduction of graphene oxide

    NASA Astrophysics Data System (ADS)

    Kim, Songkil; Kulkarni, Dhaval D.; Henry, Mathias; Zackowski, Paul; Jang, Seung Soon; Tsukruk, Vladimir V.; Fedorov, Andrei G.

    2015-03-01

    We report on a method for "direct-write" conductive patterning via reduction of graphene oxide (GO) sheets using focused electron beam induced deposition (FEBID) of carbon. FEBID treatment of the intrinsically dielectric graphene oxide between two metal terminals opens up the conduction channel, thus enabling a unique capability for nanoscale conductive domain patterning in GO. An increase in FEBID electron dose results in a significant increase of the domain electrical conductivity with improving linearity of drain-source current vs. voltage dependence, indicative of a change of graphene oxide electronic properties from insulating to semiconducting. Density functional theory calculations suggest a possible mechanism underlying this experimentally observed phenomenon, as localized reduction of graphene oxide layers via interactions with highly reactive intermediates of electron-beam-assisted dissociation of surface-adsorbed hydrocarbon molecules. These findings establish an unusual route for using FEBID as nanoscale lithography and patterning technique for engineering carbon-based nanomaterials and devices with locally tailored electronic properties.

  7. Localized conductive patterning via focused electron beam reduction of graphene oxide

    SciTech Connect

    Kim, Songkil; Henry, Mathias; Kulkarni, Dhaval D.; Zackowski, Paul; Jang, Seung Soon; Tsukruk, Vladimir V.; Fedorov, Andrei G.

    2015-03-30

    We report on a method for “direct-write” conductive patterning via reduction of graphene oxide (GO) sheets using focused electron beam induced deposition (FEBID) of carbon. FEBID treatment of the intrinsically dielectric graphene oxide between two metal terminals opens up the conduction channel, thus enabling a unique capability for nanoscale conductive domain patterning in GO. An increase in FEBID electron dose results in a significant increase of the domain electrical conductivity with improving linearity of drain-source current vs. voltage dependence, indicative of a change of graphene oxide electronic properties from insulating to semiconducting. Density functional theory calculations suggest a possible mechanism underlying this experimentally observed phenomenon, as localized reduction of graphene oxide layers via interactions with highly reactive intermediates of electron-beam-assisted dissociation of surface-adsorbed hydrocarbon molecules. These findings establish an unusual route for using FEBID as nanoscale lithography and patterning technique for engineering carbon-based nanomaterials and devices with locally tailored electronic properties.

  8. VLF-emissions from ring current electrons. An interpretation of the band of missing emissions

    NASA Technical Reports Server (NTRS)

    Maeda, K.; Smith, P. H.; Anderson, R. R.

    1976-01-01

    VLF-emissions associated with the enhancement of ring current electrons during magnetic storms and substorms which were detected by the equatorially orbiting S-A satellite (Explorer 45) are described. The emissions observed near the geomagnetic equator consist of essentially two frequency regimes, i.e., one above the electron gyrofrequency, f sub H at the equator and the other below f sub H. This is indicated as a part of the wide-band data obtained during the main phase of the December 17, 1971 magnetic storm. The upper figure is the ac-magnetic field data measured by the search-coil magnetometer with the upper cutoff of 3kHz and the lower figure is the ac-electric field data obtained by the electric field sensor with the upper cutoff of 10kHz. These figures show the time sequence of the observed emissions along the inbound orbit (No. 101) of the satellite as f sub H changes approximately from 3 kHz at 20 UT to 6 kHz at 21 UT. The emissions above f sub H are electrostatic mode, which peak near the frequencies of (n + 1/2) f sub H where n is positive integer, and sometimes emissions up to n = 10 are observed. The emissions below f sub H are whistler mode, which have a conspicuous gap along exactly half electron gyrofrequency, f sub H/2.

  9. Towards double-functionalized small diamondoids: selective electronic band-gap tuning

    NASA Astrophysics Data System (ADS)

    Adhikari, Bibek; Fyta, Maria

    2015-01-01

    Diamondoids are nanoscale diamond-like cage structures with hydrogen terminations, which can occur in various sizes and with a diverse type of modifications. In this work, we focus on the structural alterations and the effect of doping and functionalization on the electronic properties of diamondoids, from the smallest adamantane to heptamantane. The results are based on quantum mechanical calculations. We perform a self-consistent study, starting with doping the smallest diamondoid, adamantane. Boron, nitrogen, silicon, oxygen, and phosphorus are chosen as dopants at sites which have been previously optimized and are also consistent with the literature. At a next step, an amine- and a thiol- group are separately used to functionalize the adamantane molecule. We mainly focus on a double functionalization of diamondoids up to heptamantane using both these atomic groups. The effect of isomeration in the case of tetramantane is also studied. We discuss the higher efficiency of a double-functionalization compared to doping or a single-functionalization of diamondoids in tuning the electronic properties, such as the electronic band-gap, of modified small diamondoids in view of their novel nanotechnological applications.

  10. Band gap engineering and \\vec{k}\\cdot \\vec{\\pi } electronic structure of lead and tin tellurides

    NASA Astrophysics Data System (ADS)

    Behera, S. S.; Tripathi, G. S.

    2016-06-01

    We study the effect of the variation of energy gap on the k\\cdot π electronic structure of PbTe and SnTe, using a six-level basis at the L point. The basis functions in both the systems have the same transformation properties. However, the basis functions of the band edge states in SnTe are reversed with respect to the same in PbTe. Band dispersions are obtained analytically for a two band model. As the band gap decreases, the bands become linear. Far bands are included in the electronic dispersion, using perturbation theory. Fermi energy and the Density of States at the Fermi energy, { D }({\\varepsilon }F), are calculated for different carrier concentrations and energy gaps through a self-consistent approach. Interesting results are seen when the energy gap is reduced from the respective equilibrium values. For both the systems, the Fermi energy increases as the gap is decreased. The behavior of { D }({\\varepsilon }F) is, however, different. It decreases with the gap. It is also on expected lines. Calculated values of the electronic effective mass, as a function of temperature, energy gap and carrier concentration, are compared with previously published data. As distinguished from a first principles calculation, the work has focused on the carrier dependent electronic parameters for use both by theorists and experimenters as well.

  11. Band Degeneracy, Low Thermal Conductivity, and High Thermoelectric Figure of Merit in SnTe-CaTe Alloys

    NASA Astrophysics Data System (ADS)

    Al Rahal Al Orabi, R.; Mecholsky, N.; Hwang, J. P.; Kim, W.; Rhyee, J. S.; Wee, D.; Fornari, M.

    Pure lead-free SnTe has limited thermoelectric potentials because of the low Seebeck coeffcients and the relatively large thermal conductivity. In this study, we provide experimental evidence and theoretical understanding that alloying SnTe with Ca greatly improves the transport properties leading to ZT of 1.35 at 873 K, the highest ZT value so far reported for singly doped SnTe materials. The introduction of Ca (0-9%) in SnTe induces multiple effects: (1) Ca replaces Sn and reduces the hole concentration due to Sn vacancies, (2) the energy gap increases limiting the bipolar transport, (3) several bands with larger effective masses become active in transport, and (4) the lattice thermal conductivity is reduced of about 70% due to the contribution of concomitant scattering terms associated with the alloy disorder and the presence of nanoscale precipitates. An effciency of 10% (for ΔT = 400 K) was predicted for high temperature thermoelectric power generation using SnTe-based n- and p-type materials.

  12. Note: Radio frequency inductance-capacitance band-stop filter circuit to perform contactless conductivity measurements in pulsed magnetic fields

    NASA Astrophysics Data System (ADS)

    Altarawneh, M. M.

    2012-09-01

    We present a new technique to perform radio frequency (rf) contactless conductivity measurements in pulsed magnetic fields to probe different ground states in condensed matter physics. The new method utilizes a simple analog band-stop filter circuit implemented in a radio frequency transmission setup to perform contactless conductivity measurements. The new method is more sensitive than the other methods (e.g., the tunnel diode oscillator and the proximity detector oscillator) due to more sensitive dependence of the circuit resonance frequency on the tank circuit inductance (not the transmission line). More important, the new method is more robust than other methods when used to perform measurements in very high magnetic fields, works for a wide range of temperatures (i.e., 300 K-1.4 K) and is less sensitive to noise and mechanical vibrations during pulse magnet operation. The new technique was successfully applied to measure the Shubnikov-de Haas effect in Bi2Se3 in pulsed magnetic fields of up to 60 T.

  13. Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications.

    PubMed

    Pecqueur, Sébastien; Maltenberger, Anna; Petrukhina, Marina A; Halik, Marcus; Jaeger, Arndt; Pentlehner, Dominik; Schmid, Günter

    2016-08-22

    Ten new efficient p-dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promotes the efficiency of OLED devices. The combination of these features with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics. PMID:27440434

  14. Electronically conducting metal oxide nanoparticles and films for optical sensing applications

    DOEpatents

    Ohodnicki, Jr., Paul R.; Wang, Congjun; Andio, Mark A

    2014-09-16

    The disclosure relates to a method of detecting a change in a chemical composition by contacting a conducting oxide material with a monitored stream, illuminating the conducting oxide material with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The conducting metal oxide has a carrier concentration of at least 10.sup.17/cm.sup.3, a bandgap of at least 2 eV, and an electronic conductivity of at least 10.sup.-1 S/cm, where parameters are specified at the gas stream temperature. The optical response of the conducting oxide materials is proposed to result from the high carrier concentration and electronic conductivity of the conducting metal oxide, and the resulting impact of changing gas atmospheres on that relatively high carrier concentration and electronic conductivity. These changes in effective carrier densities and electronic conductivity of conducting metal oxide films and nanoparticles are postulated to be responsible for the change in measured optical absorption associated with free carriers. Exemplary conducting metal oxides include but are not limited to Al-doped ZnO, Sn-doped In.sub.2O.sub.3, Nb-doped TiO.sub.2, and F-doped SnO.sub.2.

  15. All-electron GW quasiparticle band structures of group 14 nitride compounds

    NASA Astrophysics Data System (ADS)

    Chu, Iek-Heng; Kozhenikov, Anton; Schulthess, Thomas; Cheng, Hai-Ping

    2014-03-01

    We have investigated the group 14 nitrides (M3N4) in both the spinel phase (with M =C, Si, Ge and Sn) and the beta phase (with M =Si, Ge and Sn) using density functional theory (DFT) with the local density approximation (LDA). The Kohn-Sham energies of these systems are first calculated within the framework of full-potential LAPW and then corrected using single-shot G0W0 calculations, which we have implemented in the Exciting-Plus code. Direct bands gap at the Γ point are found for all spinel-type nitrides. The calculated band gaps of Si3N4, Ge3N4 and Sn3N4 agree with experiment. We also find that for all systems studied, our GW calculations with and without the plasmon-pole approximation give very similar results, even when the system contains semi-core 3d electrons. These spinel-type nitrides are novel materials for potential optoelectronic applications. This work is supported by NSF/DMR-0804407 and DOE/BES-DE-FG02-02ER45995. Computations are performed using facilities at NERSC.

  16. Correlating structure and electronic band-edge properties in organolead halide perovskites nanoparticles.

    PubMed

    Zhu, Qiushi; Zheng, Kaibo; Abdellah, Mohamed; Generalov, Alexander; Haase, Dörthe; Carlson, Stefan; Niu, Yuran; Heimdal, Jimmy; Engdahl, Anders; Messing, Maria E; Pullerits, Tonu; Canton, Sophie E

    2016-06-01

    After having emerged as primary contenders in the race for highly efficient optoelectronics materials, organolead halide perovskites (OHLP) are now being investigated in the nanoscale regime as promising building blocks with unique properties. For example, unlike their bulk counterpart, quantum dots of OHLP are brightly luminescent, owing to large exciton binding energies that cannot be rationalized solely on the basis of quantum confinement. Here, we establish the direct correlation between the structure and the electronic band-edge properties of CH3NH3PbBr3 nanoparticles. Complementary structural and spectroscopic measurements probing long-range and local order reveal that lattice strain influences the nature of the valence band and modifies the subtle stereochemical activity of the Pb(2+) lone-pair. More generally, this work demonstrates that the stereochemical activity of the lone-pair at the metal site is a specific physicochemical parameter coupled to composition, size and strain, which can be employed to engineer novel functionalities in OHLP nanomaterials. PMID:27189431

  17. Electronic absorption band broadening and surface roughening of phthalocyanine double layers by saturated solvent vapor treatment

    SciTech Connect

    Kim, Jinhyun; Yim, Sanggyu

    2012-10-15

    Variations in the electronic absorption (EA) and surface morphology of three types of phthalocyanine (Pc) thin film systems, i.e. copper phthalocyanine (CuPc) single layer, zinc phthalocyanine (ZnPc) single layer, and ZnPc on CuPc (CuPc/ZnPc) double layer film, treated with saturated acetone vapor were investigated. For the treated CuPc single layer film, the surface roughness slightly increased and bundles of nanorods were formed, while the EA varied little. In contrast, for the ZnPc single layer film, the relatively high solubility of ZnPc led to a considerable shift in the absorption bands as well as a large increase in the surface roughness and formation of long and wide nano-beams, indicating a part of the ZnPc molecules dissolved in acetone, which altered their molecular stacking. For the CuPc/ZnPc film, the saturated acetone vapor treatment resulted in morphological changes in mainly the upper ZnPc layer due to the significantly low solubility of the underlying CuPc layer. The treatment also broadened the EA band, which involved a combination of unchanged CuPc and changed ZnPc absorption.

  18. Characterization of borate glasses by W-band pulse electron-nuclear double resonance spectroscopy

    SciTech Connect

    Kordas, George; Goldfarb, Daniella

    2008-10-21

    (100-x) mol % B{sub 2}O{sub 3} x mol %Me{sub 2}O (Me=Li,Na,K) glasses, exposed to {gamma}-{sup 60}Co irradiation to produce paramagnetic states, were characterized by W-band (95 GHz) pulse electron-nuclear double resonance (ENDOR) spectroscopy in order to characterize local structures occurring in the range of compositions between x=16 and x=25 at which the 'boron oxide' anomaly occurs. The high resolution of nuclear frequencies allowed resolving the {sup 7}Li and {sup 11}B ENDOR lines. In the samples with x=16 and x=20 glasses, {sup 11}B hyperfine couplings of 16, 24, and 36 MHz were observed and attributed to the tetraborate, triborate, and boron oxygen hole center (BOHC) structures, respectively. The x=25 samples showed hyperfine couplings of 15 MHz for the tetraborate and 36 MHz for BOHC. Density functional theory (DFT) calculations predicted for these structures negative hyperfine couplings, which were confirmed by W-band ENDOR. This suggests that a spin polarization mechanism accounts for the negative hyperfine structure splitting.

  19. Characterization of borate glasses by W-band pulse electron-nuclear double resonance spectroscopy.

    PubMed

    Kordas, George; Goldfarb, Daniella

    2008-10-21

    (100-x) mol % B(2)O(3) x mol % Me(2)O (Me = Li,Na,K) glasses, exposed to gamma-(60)Co irradiation to produce paramagnetic states, were characterized by W-band (95 GHz) pulse electron-nuclear double resonance (ENDOR) spectroscopy in order to characterize local structures occurring in the range of compositions between x=16 and x=25 at which the "boron oxide" anomaly occurs. The high resolution of nuclear frequencies allowed resolving the (7)Li and (11)B ENDOR lines. In the samples with x=16 and x=20 glasses, (11)B hyperfine couplings of 16, 24, and 36 MHz were observed and attributed to the tetraborate, triborate, and boron oxygen hole center (BOHC) structures, respectively. The x=25 samples showed hyperfine couplings of 15 MHz for the tetraborate and 36 MHz for BOHC. Density functional theory (DFT) calculations predicted for these structures negative hyperfine couplings, which were confirmed by W-band ENDOR. This suggests that a spin polarization mechanism accounts for the negative hyperfine structure splitting. PMID:19045204

  20. A Ku band 5 bit MEMS phase shifter for active electronically steerable phased array applications

    NASA Astrophysics Data System (ADS)

    Sharma, Anesh K.; Gautam, Ashu K.; Farinelli, Paola; Dutta, Asudeb; Singh, S. G.

    2015-03-01

    The design, fabrication and measurement of a 5 bit Ku band MEMS phase shifter in different configurations, i.e. a coplanar waveguide and microstrip, are presented in this work. The development architecture is based on the hybrid approach of switched and loaded line topologies. All the switches are monolithically manufactured on a 200 µm high resistivity silicon substrate using 4 inch diameter wafers. The first three bits (180°, 90° and 45°) are realized using switched microstrip lines and series ohmic MEMS switches whereas the fourth and fifth bits (22.5° and 11.25°) consist of microstrip line sections loaded by shunt ohmic MEMS devices. Individual bits are fabricated and evaluated for performance and the monolithic device is a 5 bit Ku band (16-18 GHz) phase shifter with very low average insertion loss of the order of 3.3 dB and a return loss better than 15 dB over the 32 states with a chip area of 44 mm2. A total phase shift of 348.75° with phase accuracy within 3° is achieved over all of the states. The performance of individual bits has been optimized in order to achieve an integrated performance so that they can be implemented into active electronically steerable antennas for phased array applications.

  1. Mechanisms of nonequilibrium electron-phonon coupling and thermal conductance at interfaces

    SciTech Connect

    Giri, Ashutosh; Gaskins, John T.; Donovan, Brian F.; Szwejkowski, Chester; Hopkins, Patrick E.; Warzoha, Ronald J.; Rodriguez, Mark A.; Ihlefeld, Jon

    2015-03-14

    We study the electron and phonon thermal coupling mechanisms at interfaces between gold films with and without Ti adhesion layers on various substrates via pump-probe time-domain thermoreflectance. The coupling between the electronic and the vibrational states is increased by more than a factor of five with the inclusion of an ∼3 nm Ti adhesion layer between the Au film and the non-metal substrate. Furthermore, we show an increase in the rate of relaxation of the electron system with increasing electron and lattice temperatures induced by the laser power and attribute this to enhanced electron-electron scattering, a transport channel that becomes more pronounced with increased electron temperatures. The inclusion of the Ti layer also results in a linear dependence of the electron-phonon relaxation rate with temperature, which we attribute to the coupling of electrons at and near the Ti/substrate interface. This enhanced electron-phonon coupling due to electron-interface scattering is shown to have negligible influence on the Kapitza conductances between the Au/Ti and the substrates at longer time scales when the electrons and phonons in the metal have equilibrated. These results suggest that only during highly nonequilibrium conditions between the electrons and phonons (T{sub e} ≫ T{sub p}) does electron-phonon scattering at an interface contribute to thermal boundary conductance.

  2. Electron relaxation of DNP free radicals BDPA and DPPH at W-band

    NASA Astrophysics Data System (ADS)

    Khamoshi, Armin; Kaur, Pavanjeet; Song, Likai; Lumata, Lloyd

    2015-03-01

    The stable, spin-1/2 organic free radicals BDPA and DPPH are efficient polarizing agents for dissolution dynamic nuclear polarization (DNP). Despite the hydrophobic nature of these two free radicals, BDPA and DPPH can be dissolved in specialized solvents such as sulfolane or dimethyl sulfoxide. In this work, we have investigated the temperature dependence of the spin-lattice relaxation rate 1/T1 of these two DNP free radicals at W-band from 250 K down to 4 K. We have found that at high temperature above 40 K the relaxation rates of these free radicals (at optimum DNP concentration) behave closely according to the Raman process prediction. At lower temperature below 40 K, the relaxation rate slows down according to the direct process behavior. The results obtained here may elucidate the correlation between the relaxation of electrons and the efficiency of these free radicals in DNP.

  3. Band structure of La B6 by an algorithm for filtering reconstructed electron-positron momentum densities

    NASA Astrophysics Data System (ADS)

    Kontrym-Sznajd, G.; Samsel-Czekała, M.; Biasini, M.; Kubo, Y.

    2004-09-01

    A new method for filtering three-dimensional reconstructed densities is proposed. The algorithm is tested with simulated spectra and employed to study the electronic structure of the rare-earth compound LaB6 . For this system, momentum densities are reconstructed from theoretical and experimental two-dimensional angular correlation of electron-positron annihilation radiation (2D ACAR) spectra. The experimental results are in good agreement with the band structure calculated with the full-potential linearized augmented-plane-wave (FLAPW) method within the local-density approximation (LDA), apart from the detection of small electron pockets in the 15th band. It is also shown that, unlike the electron-positron enhancement, the electron-electron correlations affect noticeably the momentum density.

  4. Application of ionic and electronic conducting ceramics in solid oxide fuel cells

    SciTech Connect

    Singhal, S.C.

    1997-12-01

    Solid oxide fuel cells (SOFCs) offer a pollution-free technology to electrochemically generate electricity at high efficiencies. These fuel cells consist of an oxygen ion conducting electrolyte, electronic or mixed electronic and ionic conducting electrodes, and an electronic conducting interconnection. This paper reviews the ceramic materials used for the different cell components, and discusses the performance of cells fabricated using these materials. The paper also discusses the materials and processing studies that are underway to reduce the cell cost, and summarizes the recently built power generation systems that employed state-of-the-art SOFCs.

  5. Band anticrossing in dilute nitrides

    SciTech Connect

    Shan, W.; Yu, K.M.; Walukiewicz, W.; Wu, J.; Ager III, J.W.; Haller, E.E.

    2003-12-23

    Alloying III-V compounds with small amounts of nitrogen leads to dramatic reduction of the fundamental band-gap energy in the resulting dilute nitride alloys. The effect originates from an anti-crossing interaction between the extended conduction-band states and localized N states. The interaction splits the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy. The changes in the conduction band structure result in significant increase in electron effective mass and decrease in the electron mobility, and lead to a large enhance of the maximum doping level in GaInNAs doped with group VI donors. In addition, a striking asymmetry in the electrical activation of group IV and group VI donors can be attributed to mutual passivation process through formation of the nearest neighbor group-IV donor nitrogen pairs.

  6. Phase-operation for conduction electron by atomic-scale scattering via single point-defect

    SciTech Connect

    Nagaoka, Katsumi Yaginuma, Shin; Nakayama, Tomonobu

    2014-03-17

    In order to propose a phase-operation technique for conduction electrons in solid, we have investigated, using scanning tunneling microscopy, an atomic-scale electron-scattering phenomenon on a 2D subband state formed in Si. Particularly, we have noticed a single surface point-defect around which a standing-wave pattern created, and a dispersion of scattering phase-shifts by the defect-potential against electron-energy has been measured. The behavior is well-explained with appropriate scattering parameters: the potential height and radius. This result experimentally proves that the atomic-scale potential scattering via the point defect enables phase-operation for conduction electrons.

  7. Influence of dye content on the conduction band edge of titania in the steam-treated dye-dispersing titania electrodes.

    PubMed

    Setiawan, Rudi Agus; Nishikiori, Hiromasa; Tanaka, Nobuaki; Fujii, Tsuneo

    2014-01-01

    The titania and dye-dispersing titania electrodes were prepared by a nitric acid-catalyzed sol-gel process. The dye-dispersing titania contains the dye molecules dispersed on the surface of the individual nanosized titania particles. The photo-cyclic voltammetry (Photo-CV) and photoelectric measurements of the dye-dispersing titania electrodes were conducted to clarify the factors changing the conduction band edge of the titania and the open-circuit voltage (Voc ) of the electrodes. The remaining nitrate ions caused a negative shift of conduction band edge of the titania of the dye-dispersing titania. The conduction band edge of the titania was shifted in a negative direction in the electrode containing a greater amount of the dye. These results are due to the adsorption of nitrate ions and the dye-titania complex formation on the titania particle surface. The effect of the dye-titania complex formation on the shift in the titania conduction band edge was greater than that of the adsorption of nitrate ions due to strong interaction between the dye and titania through the carboxylate and quinone-like groups of the dye. The shift in the titania conduction band edge corresponded to the change in the Voc value. PMID:24893823

  8. Valence and conduction band offsets at low-k a-SiO{sub x}C{sub y}:H/a-SiC{sub x}N{sub y}:H interfaces

    SciTech Connect

    King, Sean W. Brockman, Justin; French, Marc; Jaehnig, Milt; Kuhn, Markus; French, Benjamin

    2014-09-21

    In order to understand the fundamental electrical leakage and reliability failure mechanisms in nano-electronic low-k dielectric/metal interconnect structures, we have utilized x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy to determine the valence and conduction band offsets present at interfaces between non-porous and porous low-k a-SiO{sub x}C{sub y}:H interlayer dielectrics and a-SiC{sub x}N{sub y}:H metal capping layers. The valence band offset for such interfaces was determined to be 2.7±0.2 eV and weakly dependent on the a-SiOC:H porosity. The corresponding conduction band offset was determined to be 2.1±0.2 eV. The large band offsets indicate that intra metal layer leakage is likely dominated by defects and trap states in the a-SiOC:H and a-SiCN:H dielectrics.

  9. The role of band alignment in p-type conductivity of Na-doped ZnMgO: Polar versus non-polar

    SciTech Connect

    Zhang, H. H.; Pan, X. H. E-mail: yezz@zju.edu.cn; Li, Y.; Ye, Z. Z. E-mail: yezz@zju.edu.cn; Lu, B.; Chen, W.; Huang, J. Y.; Ding, P.; Chen, S. S.; He, H. P.; Lu, J. G.; Chen, L. X.; Ye, C. L.

    2014-03-17

    We investigate the electrical properties of polar and non-polar ZnMgO:Na films that have been fabricated on c-plane and r-plane sapphire substrates using intervened ZnO layers (10–30 nm thick) by pulsed laser deposition. Hall-effect measurements indicate that the a-plane ZnMgO:Na film exhibits p-type conductivity with a carrier concentration of about 3.5 × 10{sup 16} cm{sup −3}, while the polar film shows a compensatory conductivity. Meanwhile, the dependence of the band alignment on the orientation of the ZnMgO/ZnO heterojunctions has been investigated using photoelectron spectroscopy. The heterojunctions form in the type-I straddling alignment with valence band offsets of 0.07 (0.02) eV for the (non-)polar heterojunction. The difference in valence band offsets is primarily attributed to the spontaneous polarization effect. We propose that the smaller valence band offsets and larger conduction band offsets would reduce the Na{sub Zn} acceptor level and enhance the relative intrinsic donor levels. Such effects consequently lead to p-type conductivity in non-polar ZnMgO:Na films. The band alignment of non-polar ZnMgO/ZnO can be used to facilitate p-type doping with a shallower acceptor state in the ZnO-like alloy.

  10. Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies

    NASA Astrophysics Data System (ADS)

    Rehman, Gul; Shafiq, M.; Saifullah; Ahmad, Rashid; Jalali-Asadabadi, S.; Maqbool, M.; Khan, Imad; Rahnamaye-Aliabad, H.; Ahmad, Iftikhar

    2016-07-01

    The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III-V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha's modified Becke-Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III-V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.

  11. Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies

    NASA Astrophysics Data System (ADS)

    Rehman, Gul; Shafiq, M.; Saifullah; Ahmad, Rashid; Jalali-Asadabadi, S.; Maqbool, M.; Khan, Imad; Rahnamaye-Aliabad, H.; Ahmad, Iftikhar

    2016-05-01

    The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III-V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha's modified Becke-Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III-V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.

  12. Experimental and theoretical investigations of the electronic band structure of metal-organic frameworks of HKUST-1 type

    NASA Astrophysics Data System (ADS)

    Gu, Zhi-Gang; Heinke, Lars; Wöll, Christof; Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin; Gordan, Ovidiu D.; Zahn, Dietrich R. T.

    2015-11-01

    The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly "simple" MOF, the excitation spectra cannot be explained by a superposition of "intra-unit" excitations within the individual building blocks. Instead, "inter-unit" excitations also have to be considered.

  13. Experimental and theoretical investigations of the electronic band structure of metal-organic frameworks of HKUST-1 type

    SciTech Connect

    Gu, Zhi-Gang; Heinke, Lars Wöll, Christof; Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin; Gordan, Ovidiu D.; Zahn, Dietrich R. T.

    2015-11-02

    The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly “simple” MOF, the excitation spectra cannot be explained by a superposition of “intra-unit” excitations within the individual building blocks. Instead, “inter-unit” excitations also have to be considered.

  14. The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting

    NASA Astrophysics Data System (ADS)

    Li, Kexue; Liu, Lei; Yu, Peter Y.; Chen, Xiaobo; Shen, D. Z.

    2016-05-01

    By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.

  15. The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting.

    PubMed

    Li, Kexue; Liu, Lei; Yu, Peter Y; Chen, Xiaobo; Shen, D Z

    2016-05-11

    By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality. PMID:27049355

  16. Electronic band structures of AV(2) (A = Ta, Ti, Hf and Nb) Laves phase compounds.

    PubMed

    Charifi, Z; Reshak, Ali Hussain; Baaziz, H

    2009-01-14

    First-principles density functional calculations, using the all-electron full potential linearized augmented plane wave method, have been performed in order to investigate the structural and electronic properties for Laves phase AV(2) (A = Ta, Ti, Hf and Nb) compounds. The generalized gradient approximation and the Engel-Vosko-generalized gradient approximation were used. Our calculations show that these compounds are metallic with more bands cutting the Fermi energy (E(F)) as we move from Nb to Ta, Hf and Ti, consistent with the increase in the values of the density of states at the Fermi level N(E(F)). N(E(F)) is controlled by the overlapping of V-p/d, A-d and A-p states around the Fermi energy. The ground state properties of these compounds, such as equilibrium lattice constant, are calculated and compared with the available literature. There is a strong/weak hybridization between the states, V-s states are strongly hybridized with A-s states below and above E(F). Around the Fermi energy we notice that V-p shows strong hybridization with A-p states. PMID:21813979

  17. Physical properties and electronic band structure of noncentrosymmetric Th7Co3 superconductor

    NASA Astrophysics Data System (ADS)

    Sahakyan, M.; Tran, V. H.

    2016-05-01

    The physical properties of the noncentrosymmetric superconductor Th7Co3 have been investigated by means of ac-magnetic susceptibility, magnetization, specific heat, electrical resistivity, magnetoresistance and Hall effect measurements. From these data it is established that Th7Co3 is a dirty type-II superconductor with {{T}\\text{c}}=1.8+/- 0.02 K, Hc2\\text{orb}<{{H}c2}(0)∼ 10~\\text{kOe}c2p and moderate electron–phonon coupling {λ\\text{el-\\text{ph}}}=0.56 . Some evidences for anisotropic superconducting gap are found, including e.g. reduced specific heat jump (Δ {{C}p}/γ {{T}\\text{c}}=1.01 ) at T c, diminished superconducting energy gap ({{Δ }0}/{{k}\\text{B}}{{T}\\text{c}}=2.17 ) as compared to the BCS values, power law field dependence of the Sommerfeld coefficient at 0.4 K ({{C}p}/T\\propto {{H}0.6} ), and a concave curvature of the {{H}c2}≤ft({{T}\\text{c}}\\right) line. The magnitudes of the thermodynamic critical field and the energy gap are consistent with mean-squared anisotropy parameter < {{a}2}> ∼ 0.23 . The electronic specific heat in the superconducting state is reasonably fitted to an oblate spheroidal gap model. Calculations of scalar relativistic and fully relativistic electronic band structures reveal considerable differences in the degenerate structure, resulting from asymmetric spin–orbit coupling (ASOC). A large splitting energy of spin-up spin-down bands at the Fermi level E F, Δ {{E}\\text{ASOC}}∼ 100 meV is observed and a sizeable ratio Δ {{E}\\text{ASOC}}/{{k}\\text{B}}{{T}\\text{c}}∼ 640 could classify the studied compound into the class of noncentrosymmetric superconductors with strong ASOC. The noncentrosymmetry of the crystal structure and the atomic relativistic effects are both responsible for an importance of ASOC in Th7Co3. The calculated results for the density of states show a Van Hove singularity just below E F and dominant role of the 6d electrons of Th to the superconductivity.

  18. Conditions for Aeronomic Applicability of the Classical Electron Heat Conduction Formula

    NASA Technical Reports Server (NTRS)

    Cole, K. D.; Hoegy, W. R.

    1998-01-01

    Conditions for the applicability of the classical formula for heat conduction in the electrons in ionized gas are investigated. In a fully ionised gas ( V(sub en) much greater than V(sub ei)), when the mean free path for electron-electron (or electron-ion) collisions is much larger than the characteristic thermal scale length of the observed system, the conditions for applicability break down. In the case of the Venus ionosphere this breakdown is indicated for a large fraction of the electron temperature data from altitudes greater than 180 km, for electron densities less than 10(exp 4)/cc cm. In a partially ionised gas such that V(sub en) much greater than V(sub ei) there is breakdown of the formula not only when the mean free path of electrons greatly exceeds the thermal scale length, but also when the gradient of neutral particle density exceeds the electron thermal gradient. It is shown that electron heat conduction may be neglected in estimating the temperature of joule heated electrons by observed strong 100 Hz electric fields when the conduction flux is limited by the saturation flux. The results of this paper support our earlier aeronomical arguments against the hypothesis of planetary scale whistlers for the 100 Hz electric field signal. In turn this means that data from the 100 Hz signal may not be used to support the case for lightning on Venus.

  19. Thermal Conductivity in Nanoporous Gold Films during Electron-Phonon Nonequilibrium

    DOE PAGESBeta

    Hopkins, Patrick E.; Norris, Pamela M.; Phinney, Leslie M.; Policastro, Steven A.; Kelly, Robert G.

    2008-01-01

    The reduction of nanodevices has given recent attention to nanoporous materials due to their structure and geometry. However, the thermophysical properties of these materials are relatively unknown. In this article, an expression for thermal conductivity of nanoporous structures is derived based on the assumption that the finite size of the ligaments leads to electron-ligament wall scattering. This expression is then used to analyze the thermal conductivity of nanoporous structures in the event of electron-phonon nonequilibrium.

  20. Development of novel semi-conducting ortho-carborane based polymer films: Enhanced electronic and chemical properties

    NASA Astrophysics Data System (ADS)

    Pasquale, Frank L.

    A novel class of semi-conducting ortho-carborane (B 10C2H12) based polymer films with enhanced electronic and chemical properties has been developed. The novel films are formed from electron-beam cross-linking of condensed B10C2H 12 and B10C2H12 co-condensed with aromatic linking units (Y) (Y=1,4-diaminobenzene (DAB), benzene (BNZ) and pyridine (PY)) at 110 K. The bonding and electronic properties of the novel films were investigated using X-ray photoelectron spectroscopy (XPS), UV photoelectron spectroscopy (UPS) and Mulliken charge analysis using density functional theory (DFT). These films exhibit site-specific cross-linking with bonding, in the pure B10C2HX films, occurring at B sites non-adjacent to C in the B10C2H12 icosahedra. The B10C2H12:Y films exhibit the same phenomena, with cross-linking that creates bonds primarily between B sites non-adjacent to C in the B10C2H12 icosahedra to C sites in the Y linking units. These novel B10C2HX: Y linked films exhibit significantly different electron structure when compared to pure B10C2HX films as seen in the UPS spectra. The valence band maxima (VBM) shift from - 4.3 eV below the Fermi level for pure B10C2HX to -2.6, -2.2, and -1.7 for B10C2HX:BNZ, B10C 2HX:PY, and B10C2HX:DAB, respectively. The top of the valence band is composed of states derived primarily from the Y linking units, suggesting that the bottom of the conduction band is composed of states primarily from B10C2H12. Consequently these B10C2HX:Y films may exhibit longer electron-hole separation lifetimes as compared to pure B10C 2HX films. This research should lead to an enhancement of boron carbide based neutron detectors, and is of potential significance for microelectronics, spintronics and photo-catalysis.

  1. Combined scattering loss of radiation belt relativistic electrons by simultaneous three-band EMIC waves: A case study

    NASA Astrophysics Data System (ADS)

    He, Fengming; Cao, Xing; Ni, Binbin; Xiang, Zheng; Zhou, Chen; Gu, Xudong; Zhao, Zhengyu; Shi, Run; Wang, Qi

    2016-05-01

    Multiband electromagnetic ion cyclotron (EMIC) waves can drive efficient scattering loss of radiation belt relativistic electrons. However, it is statistically uncommon to capture the three bands of EMIC waves concurrently. Utilizing data from the Electric and Magnetic Field Instrument Suite and Integrated Science magnetometer onboard Van Allen Probe A, we report the simultaneous presence of three (H+, He+, and O+) emission bands in an EMIC wave event, which provides an opportunity to look into the combined scattering effect of all EMIC emissions and the relative roles of each band in diffusing radiation belt relativistic electrons under realistic circumstances. Our quantitative results, obtained by quasi-linear diffusion rate computations and 1-D pure pitch angle diffusion simulations, demonstrate that the combined resonant scattering by the simultaneous three-band EMIC waves is overall dominated by He+ band wave diffusion, mainly due to its dominance over the wave power (the mean wave amplitudes are approximately 0.4 nT, 1.6 nT, and 0.15 nT for H+, He+, and O+ bands, respectively). Near the loss cone, while 2-3 MeV electrons undergo pitch angle scattering at a rate of the order of 10-6-10-5 s-1, 5-10 MeV electrons can be diffused more efficiently at a rate of the order of 10-3-10-2 s-1, which approaches the strong diffusion level and results in a moderately or heavily filled loss cone for the atmospheric loss. The corresponding electron loss timescales (i.e., lifetimes) vary from several days at the energies of ~2 MeV to less than 1 h at ~10 MeV. This case study indicates the leading contribution of He+ band waves to radiation belt relativistic electron losses during the coexistence of three EMIC wave bands and suggests that the roles of different EMIC wave bands in the relativistic electron dynamics should be carefully incorporated in future modeling efforts.

  2. Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: The case of M2O3(M =Al ,Ga ,In )

    NASA Astrophysics Data System (ADS)

    Sabino, Fernando P.; Besse, Rafael; Oliveira, Luiz Nunes; Wei, Su-Huai; Da Silva, Juarez L. F.

    2015-11-01

    Good transparent conducting oxides (TCOs), such as In2O3 :Sn (ITO), usually combine large optical band gaps, essential for high transparency, with relatively small fundamental band gaps due to low conduction-band minima, which favor n -type doping and enhance the electrical conductivity. It has been understood that the optical band gaps are wider than the fundamental band gaps because optical transitions between the band-edge states are forbidden. The mechanism blocking such transitions, which can play a crucial role in the designing of alternative TCOs, nonetheless remains obscure. Here, based on first-principles density functional theory calculations and symmetry analysis of three oxides, M2O3 (M =Al ,Ga ,In ), we identify the physical origin of the gap disparities. Three conditions are necessary: (1) the crystal structure must have global inversion symmetry; (2) in order to belong to the Ag or A1 g irreducible representations, the states at the conduction-band minimum must have cation and oxygen s character; (3) in order to have g parity, the oxygen p orbitals constituting the states near the valence-band maximum must be strongly coupled to the cation d orbitals. Under these conditions, optical excitations across the fundamental gap will be forbidden. The three criteria explain the trends in the M2O3 (M =Al,Ga,In) sequence, in particular, explaining why In2O3 in the bixbyite structure yields the highest figure of merit. Our study provides guidelines expected to be instrumental in the search for new TCO materials.

  3. Effect of electron temperature anisotropy on near-wall conductivity in Hall thrusters

    SciTech Connect

    Zhang, Fengkui E-mail: yudaren@hit.edu.cn; Kong, Lingyi; Zhang, Xueyi; Li, Wei; Yu, Daren E-mail: yudaren@hit.edu.cn

    2014-06-15

    The electron velocity distribution in Hall thrusters is anisotropic, which not only makes the sheath oscillate in time, but also causes the sheath to oscillate in space under the condition of low electron temperatures. The spatial oscillation sheath has a significant effect on near-wall transport current. In this Letter, the method of particle-in-cell (2D + 3 V) was adopted to simulate the effect of anisotropic electron temperatures on near-wall conductivity in a Hall thruster. Results show that the electron-wall collision frequency is within the same order in magnitude for both anisotropic and isotropic electron temperatures. The near-wall transport current produced by collisions between the electrons and the walls is much smaller than experimental measurements. However, under the condition of anisotropic electron temperatures, the non-collision transport current produced by slow electrons which reflected by the spatial oscillation sheath is much larger and closes to measurements.

  4. Size effects in the conduction electron spin resonance of anthracite and higher anthraxolite.

    PubMed

    Tadyszak, Krzysztof; Strzelczyk, Roman; Coy, Emerson; Maćkowiak, Mariusz; Augustyniak-Jabłokow, Maria A

    2016-03-01

    Electron paramagnetic resonance spectroscopy of conduction electrons, i.e. Conduction Electron Spin Resonance (CESR), is a powerful tool for studies of carbon samples. Conductive samples cause additional effects in CESR spectra that influence the shape and intensity of the signals. In cases where conduction electrons play a dominant role, whilst the influence of localized paramagnetic centres is small or negligible, the effects because of the spins on conduction electrons will dominate the spectra. It has been shown that for some ratios of the bulk sample sizes (d) to the skin depth (δ), which depend on the electrical conductivity, additional size effects become visible in the line asymmetry parameter A/|B|, which is the ratio of the maximum to the absolute, minimum value of the resonance signal. To study these effects the electrical direct current-conductivity and CESR measurements are carried out for two amorphous bulk coal samples of anthracite and a higher anthraxolite. The observed effects are described and discussed in terms of the Dyson theory. Copyright © 2015 John Wiley & Sons, Ltd. PMID:26626288

  5. Preliminary design and optimization of a G-band extended interaction oscillator based on a pseudospark-sourced electron beam

    SciTech Connect

    Yin, Y. E-mail: yinyong@uestc.edu.cn; He, W.; Zhang, L.; Yin, H.; Cross, A. W.

    2015-07-15

    The design and simulation of a G-band extended interaction oscillator (EIO) driven by a pseudospark-sourced electron beam is presented. The characteristic of the EIO and the pseudospark-based electron beam were studied to enhance the performance of the newly proposed device. The beam-wave interaction of the EIO can be optimized by choosing a suitable pseudospark discharging voltage and by widening the operating voltage region of the EIO circuit. Simulation results show that a peak power of over 240 W can be achieved at G-band using a pseudospark discharge voltage of 41 kV.

  6. Band Alignment, Built-In Potential, and the Absence of Conductivity at the LaCrO3/SrTiO3(001) Heterojunction

    NASA Astrophysics Data System (ADS)

    Chambers, S. A.; Qiao, L.; Droubay, T. C.; Kaspar, T. C.; Arey, B. W.; Sushko, P. V.

    2011-11-01

    Core-level and valence-band x-ray photoemission spectra measured for molecular-beam-epitaxy-grown LaCrO3/SrTiO3(001) yield band offsets and potential gradients within the LaCrO3 sufficient to trigger an electronic reconstruction to alleviate the polarity mismatch. Yet, the interface is insulating. Based on first principles calculations, we attribute this unexpected result to interfacial cation mixing combined with charge redistribution within CrO2 layers, enabled by low-lying d states within LaCrO3, which suppresses an electronic reconstruction.

  7. Thermal flux limited electron Kapitza conductance in copper-niobium multilayers

    SciTech Connect

    Cheaito, Ramez; Hattar, Khalid Mikhiel; Gaskins, John T.; Yadav, Ajay K.; Duda, John C.; Beechem, III, Thomas Edwin; Ihlefeld, Jon; Piekos, Edward S.; Baldwin, Jon K.; Misra, Amit; Hopkins, Patrick E.

    2015-03-05

    The interplay between the contributions of electron thermal flux and interface scattering to the Kapitza conductance across metal-metal interfaces through measurements of thermal conductivity of copper-niobium multilayers was studied. Thermal conductivities of copper-niobium multilayer films of period thicknesses ranging from 5.4 to 96.2 nm and sample thicknesses ranging from 962 to 2677 nm are measured by time-domain thermoreflectance over a range of temperatures from 78 to 500 K. The Kapitza conductances between the Cu and Nb interfaces in multilayer films are determined from the thermal conductivities using a series resistor model and are in good agreement with the electron diffuse mismatch model. The results for the thermal boundary conductance between Cu and Nb are compared to literature values for the thermal boundary conductance across Al-Cu and Pd-Ir interfaces, and demonstrate that the interface conductance in metallic systems is dictated by the temperature derivative of the electron energy flux in the metallic layers, rather than electron mean free path or scattering processes at the interface.

  8. Thermal flux limited electron Kapitza conductance in copper-niobium multilayers

    SciTech Connect

    Cheaito, Ramez; Gaskins, John T.; Duda, John C.; Hopkins, Patrick E.; Hattar, Khalid; Beechem, Thomas E.; Ihlefeld, Jon F.; Piekos, Edward S.; Yadav, Ajay K.; Baldwin, Jon K.; Misra, Amit

    2015-03-02

    We study the interplay between the contributions of electron thermal flux and interface scattering to the Kapitza conductance across metal-metal interfaces through measurements of thermal conductivity of copper-niobium multilayers. Thermal conductivities of copper-niobium multilayer films of period thicknesses ranging from 5.4 to 96.2 nm and sample thicknesses ranging from 962 to 2677 nm are measured by time-domain thermoreflectance over a range of temperatures from 78 to 500 K. The Kapitza conductances between the Cu and Nb interfaces in multilayer films are determined from the thermal conductivities using a series resistor model and are in good agreement with the electron diffuse mismatch model. Our results for the thermal boundary conductance between Cu and Nb are compared to literature values for the thermal boundary conductance across Al-Cu and Pd-Ir interfaces, and demonstrate that the interface conductance in metallic systems is dictated by the temperature derivative of the electron energy flux in the metallic layers, rather than electron mean free path or scattering processes at the interface.

  9. Negative differential conductivity in quantum well with complex potential profile for electron-phonon scattering

    NASA Astrophysics Data System (ADS)

    Figarova, S. R.; Hasiyeva, G. N.; Figarov, V. R.

    2016-04-01

    The effect of phonon scattering on electrical conductivity (EC) of 2D electron gas in quantum well (QW) systems with a complicated potential profile is described. Dependence of QW electrical conductivity on QW parameters (such as QW width, Fermi level positions etc.) when phonon scattering is employed has been calculated. NDC in EC when it varies with width of the QW has been found.

  10. Thermal flux limited electron Kapitza conductance in copper-niobium multilayers

    DOE PAGESBeta

    Cheaito, Ramez; Hattar, Khalid Mikhiel; Gaskins, John T.; Yadav, Ajay K.; Duda, John C.; Beechem, III, Thomas Edwin; Ihlefeld, Jon; Piekos, Edward S.; Baldwin, Jon K.; Misra, Amit; et al

    2015-03-05

    The interplay between the contributions of electron thermal flux and interface scattering to the Kapitza conductance across metal-metal interfaces through measurements of thermal conductivity of copper-niobium multilayers was studied. Thermal conductivities of copper-niobium multilayer films of period thicknesses ranging from 5.4 to 96.2 nm and sample thicknesses ranging from 962 to 2677 nm are measured by time-domain thermoreflectance over a range of temperatures from 78 to 500 K. The Kapitza conductances between the Cu and Nb interfaces in multilayer films are determined from the thermal conductivities using a series resistor model and are in good agreement with the electron diffusemore » mismatch model. The results for the thermal boundary conductance between Cu and Nb are compared to literature values for the thermal boundary conductance across Al-Cu and Pd-Ir interfaces, and demonstrate that the interface conductance in metallic systems is dictated by the temperature derivative of the electron energy flux in the metallic layers, rather than electron mean free path or scattering processes at the interface.« less

  11. Wide band-gap, fairly conductive p-type hydrogenated amorphous silicon carbide films prepared by direct photolysis; solar cell application

    SciTech Connect

    Yamada, A.; Kenne, J.; Konagai, M.; Takahashi, K.

    1985-02-01

    Wide optical band-gap (2.0--2.3 eV) undoped and boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) films have been prepared by both direct photo and rf glow discharge (GD plasma) decomposition of pure methylsilanes or acetylene and disilane gas mixtures. The photochemically prepared p-type films showed higher dark conductivities and lower activation energies. For an optical band gap of 2.0 eV a high conductivity of 7.0 x 10/sup -5/ (S cm/sup -1/) and a low activation energy of 0.33 eV have been measured. The first trial of these wide band-gap, fairly conductive films as a window layer in a p-i-n solar cell showed the high conversion efficiency of 9.46% under AM1 insolation.

  12. Chemical doping and electron-hole conduction asymmetry in graphene devices.

    PubMed

    Farmer, Damon B; Golizadeh-Mojarad, Roksana; Perebeinos, Vasili; Lin, Yu-Ming; Tulevski, George S; Tsang, James C; Avouris, Phaedon

    2009-01-01

    We investigate poly(ethylene imine) and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points. PMID:19102701

  13. Extracting the effective mass of electrons in transparent conductive oxide thin films using Seebeck coefficient

    SciTech Connect

    Wang, Yaqin; Zhu, Junhao; Tang, Wu

    2014-05-26

    A method is proposed that combines Seebeck coefficient and carrier concentration to determine the electron effective mass of transparent conductive oxide (TCO) thin films. Experiments were conducted to test the validity of this approach on the transparent conductive Ga-doped ZnO thin films deposited by magnetron sputtering. An evident agreement of the calculated electron effective mass of the films is observed between the proposed approach and the previous studies. Besides, the optical carrier concentration and mobility derived from the calculated electron effective mass and spectroscopic ellipsometry using a complex dielectric function are consistent with those from direct Hall-effect measurement. The agreements suggest that Seebeck coefficient can serve as an alternative tool for extracting the effective mass of electrons in TCO films.

  14. Dynamical and anharmonic effects on the electron-phonon coupling and the zero-point renormalization of the band structure

    NASA Astrophysics Data System (ADS)

    Antonius, Gabriel; Poncé, Samuel; Lantagne-Hurtubise, Étienne; Auclair, Gabriel; Côté, Michel; Gonze, Xavier

    2015-03-01

    The electron-phonon coupling in solids renormalizes the band structure, reducing the band gap by several tenths of an eV in light-atoms semiconductors. Using the Allen-Heine-Cardona theory (AHC), we compute the zero-point renormalization (ZPR) as well as the quasiparticle lifetimes of the full band structure in diamond, BN, LiF and MgO. We show how dynamical effects can be included in the AHC theory, and still allow for the use of a Sternheimer equation to avoid the summation over unoccupied bands. The convergence properties of the electron-phonon coupling self-energy with respect to the Brillouin zone sampling prove to be strongly affected by dynamical effects. We complement our study with a frozen-phonon approach, which reproduces the static AHC theory, but also allows to probe the phonon wavefunctions at finite displacements and include anharmonic effects in the self-energy. We show that these high-order components tend to reduce the strongest electron-phonon coupling elements, which affects significantly the band gap ZPR.

  15. Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers

    NASA Astrophysics Data System (ADS)

    Yastrubchak, O.; Wosinski, T.; Gluba, L.; Andrearczyk, T.; Domagala, J. Z.; Żuk, J.; Sadowski, J.

    2014-01-01

    The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn)As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.

  16. Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers

    SciTech Connect

    Yastrubchak, O. Gluba, L.; Żuk, J.; Wosinski, T. Andrearczyk, T.; Domagala, J. Z.; Sadowski, J.

    2014-01-07

    The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn)As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.

  17. Finding the bare band: Electron coupling to two phonon modes in potassium-doped graphene on Ir(111)

    NASA Astrophysics Data System (ADS)

    Pletikosić, I.; Kralj, M.; Milun, M.; Pervan, P.

    2012-04-01

    We analyze renormalization of the π* band of n-doped epitaxial graphene on Ir(111) induced by electron-phonon coupling. Our procedure of extracting the bare band relies on recursive self-consistent refining of the functional form of the bare band until the convergence. We demonstrate that the components of the self-energy, as well as the spectral intensity obtained from angle-resolved photoelectron spectroscopy, show that the renormalization is due to the coupling to two distinct phonon excitations. From the velocity renormalization and an increase of the imaginary part of the self-energy we find the electron-phonon coupling constant to be ˜0.2, which is in fair agreement with a previous study of the same system, despite the notable difference in the width of spectroscopic curves. Our experimental results also suggest that potassium intercalated between graphene and Ir(111) does not introduce any additional increase of the quasiparticle scattering rate.

  18. Application of mid-infrared free-electron laser tuned to amide bands for dissociation of aggregate structure of protein.

    PubMed

    Kawasaki, Takayasu; Yaji, Toyonari; Ohta, Toshiaki; Tsukiyama, Koichi

    2016-01-01

    A mid-infrared free-electron laser (FEL) is a linearly polarized, high-peak powered pulse laser with tunable wavelength within the mid-infrared absorption region. It was recently found that pathogenic amyloid fibrils could be partially dissociated to the monomer form by the irradiation of the FEL targeting the amide I band (C=O stretching vibration), amide II band (N-H bending vibration) and amide III band (C-N stretching vibration). In this study, the irradiation effect of the FEL on keratin aggregate was tested as another model to demonstrate an applicability of the FEL for dissociation of protein aggregates. Synchrotron radiation infrared microscopy analysis showed that the α-helix content in the aggregate structure decreased to almost the same level as that in the monomer state after FEL irradiation tuned to 6.06 µm (amide I band). Both irradiations at 6.51 µm (amide II band) and 8.06 µm (amide III band) also decreased the content of the aggregate but to a lesser extent than for the irradiation at the amide I band. On the contrary, the irradiation tuned to 5.6 µm (non-absorbance region) changed little the secondary structure of the aggregate. Scanning-electron microscopy observation at the submicrometer order showed that the angular solid of the aggregate was converted to non-ordered fragments by the irradiation at each amide band, while the aggregate was hardly deformed by the irradiation at 5.6 µm. These results demonstrate that the amide-specific irradiation by the FEL was effective for dissociation of the protein aggregate to the monomer form. PMID:26698057

  19. Development of a Polarized Electron Gun Based on an S-Band PWT Photoinjector

    SciTech Connect

    Clendenin, James E

    2003-07-29

    An RF polarized electron gun utilizing the unique features of an integrated, plane-wave-transformer (PWT) photoelectron injector [1] is being developed by DULY Research Inc. in collaboration with SLAC. Modifications to a DULY S-band device [2] include: a re-design of the photocathode/RF backplane interface to accommodate a GaAs cathode; change in the design of the vacuum ports to provide 10-11 Torr operation; the inclusion of a load-lock photocathode replacement system to allow for reactivation and cessation of the GaAs photocathode in a vacuum; and alteration of the magnet field coils to make room for the load-lock. The use of a stainless steel outer tank and cooling rods without copper plating may also provide better vacuum performance at the expense of diminished Q factor. The effectiveness of both the standard cooling rods and synthetic diamond heat sinks for disk cooling is investigated for future linear collider applications operating at a rep rate of 180 Hz and a bunch charge of 2 nC.

  20. AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

    NASA Astrophysics Data System (ADS)

    Xubo, Song; Yuanjie, Lü; Guodong, Gu; Yuangang, Wang; Xin, Tan; Xingye, Zhou; Shaobo, Dun; Peng, Xu; Jiayun, Yin; Bihua, Wei; Zhihong, Feng; Shujun, Cai

    2016-04-01

    We report the DC and RF characteristics of AlN/GaN high electron mobility transistors (HEMTs) with the gate length of 100 nm on sapphire substrates. The device exhibits a maximum drain current density of 1.29 A/mm and a peak transconductance of 440 mS/mm. A current gain cutoff frequency and a maximum oscillation frequency of 119 GHz and 155 GHz have been obtained, respectively. Furthermore, the large signal load pull characteristics of the AlN/GaN HEMTs were measured at 29 GHz. An output power density of 429 mW/mm has been demonstrated at a drain bias of 10 V. To the authors' best knowledge, this is the earliest demonstration of power density at the Ka band for AlN/GaN HEMTs in the domestic, and also a high frequency of load-pull measurements for AlN/GaN HEMTs. Project supported by the National Natural Science Foundation of China (No. 61306113).

  1. ADVANCED X-BAND TEST ACCELERATOR FOR HIGH BRIGHTNESS ELECTRON AND GAMMA RAY BEAMS

    SciTech Connect

    Marsh, R A; Anderson, S G; Barty, C P; Chu, T S; Ebbers, C A; Gibson, D J; Hartemann, F V; Adolphsen, C; Jongewaard, E N; Raubenheimer, T; Tantawi, S G; Vlieks, A E; Wang, J W

    2010-05-12

    In support of Compton scattering gamma-ray source efforts at LLNL, a multi-bunch test stand is being developed to investigate accelerator optimization for future upgrades. This test stand will enable work to explore the science and technology paths required to boost the current 10 Hz monoenergetic gamma-ray (MEGa-Ray) technology to an effective repetition rate exceeding 1 kHz, potentially increasing the average gamma-ray brightness by two orders of magnitude. Multiple bunches must be of exceedingly high quality to produce narrow-bandwidth gamma-rays. Modeling efforts will be presented, along with plans for a multi-bunch test stand at LLNL. The test stand will consist of a 5.5 cell X-band rf photoinjector, single accelerator section, and beam diagnostics. The photoinjector will be a high gradient standing wave structure, featuring a dual feed racetrack coupler. The accelerator will increase the electron energy so that the emittance can be measured using quadrupole scanning techniques. Multi-bunch diagnostics will be developed so that the beam quality can be measured and compared with theory. Design will be presented with modeling simulations, and layout plans.

  2. Advanced X-Band Test Accelerator for High Brightness Electron and Gamma Ray Beams

    SciTech Connect

    Marsh, Roark; Anderson, Scott; Barty, Christopher; Chu, Tak Sum; Ebbers, Chris; Gibson, David; Hartemann, Fred; Adolphsen, Chris; Jongewaard, Erik; Raubenheimer, Tor; Tantawi, Sami; Vlieks, Arnold; Wang, Juwen; /SLAC

    2012-07-03

    In support of Compton scattering gamma-ray source efforts at LLNL, a multi-bunch test stand is being developed to investigate accelerator optimization for future upgrades. This test stand will enable work to explore the science and technology paths required to boost the current 10 Hz monoenergetic gamma-ray (MEGa-Ray) technology to an effective repetition rate exceeding 1 kHz, potentially increasing the average gamma-ray brightness by two orders of magnitude. Multiple bunches must be of exceedingly high quality to produce narrow-bandwidth gamma-rays. Modeling efforts will be presented, along with plans for a multi-bunch test stand at LLNL. The test stand will consist of a 5.5 cell X-band rf photoinjector, single accelerator section, and beam diagnostics. The photoinjector will be a high gradient standing wave structure, featuring a dual feed racetrack coupler. The accelerator will increase the electron energy so that the emittance can be measured using quadrupole scanning techniques. Multi-bunch diagnostics will be developed so that the beam quality can be measured and compared with theory. Design will be presented with modeling simulations, and layout plans.

  3. Extreme sensitivity of the electric-field-induced band gap to the electronic topological transition in sliding bilayer graphene

    PubMed Central

    Lee, Kyu Won; Lee, Cheol Eui

    2015-01-01

    We have investigated the effect of electronic topological transition on the electric field-induced band gap in sliding bilayer graphene by using the density functional theory calculations. The electric field-induced band gap was found to be extremely sensitive to the electronic topological transition. At the electronic topological transition induced by layer sliding, four Dirac cones in the Bernal-stacked bilayer graphene reduces to two Dirac cones with equal or unequal Dirac energies depending on the sliding direction. While the critical electric field required for the band gap opening increases with increasing lateral shift for the two Dirac cones with unequal Dirac energies, the critical field is essentially zero with or without a lateral shift for the two Dirac cones with equal Dirac energies. The critical field is determined by the Dirac energy difference and the electronic screening effect. The electronic screening effect was also found to be enhanced with increasing lateral shift, apparently indicating that the massless helical and massive chiral fermions are responsible for the perfect and imperfect electronic screening, respectively. PMID:26635178

  4. Photoconductivities from band states and a dissipative electron dynamics: Si(111) without and with adsorbed Ag clusters

    NASA Astrophysics Data System (ADS)

    Vazhappilly, Tijo; Hembree, Robert H.; Micha, David A.

    2016-01-01

    A new general computational procedure is presented to obtain photoconductivities starting from atomic structures, combining ab initio electronic energy band states with populations from density matrix theory, and implemented for a specific set of materials based on Si crystalline slabs and their nanostructured surfaces without and with adsorbed Ag clusters. The procedure accounts for charge mobility in semiconductors in photoexcited states, and specifically electron and hole photomobilities at Si(111) surfaces with and without adsorbed Ag clusters using ab initio energy bands and orbitals generated from a generalized gradient functional, however with excited energy levels modified to provide correct bandgaps. Photoexcited state populations for each band and carrier type were generated using steady state solution of a reduced density matrix which includes dissipative medium effects. The present calculations provide photoexcited electronic populations and photoinduced mobilities resulting from applied electric fields and obtained from the change of driven electron energies with their electronic momentum. Extensive results for Si slabs with 8 layers, without and with adsorbed Ag clusters, show that the metal adsorbates lead to substantial increases in the photomobility and photoconductivity of electrons and holes.

  5. Photoconductivities from band states and a dissipative electron dynamics: Si(111) without and with adsorbed Ag clusters.

    PubMed

    Vazhappilly, Tijo; Hembree, Robert H; Micha, David A

    2016-01-14

    A new general computational procedure is presented to obtain photoconductivities starting from atomic structures, combining ab initio electronic energy band states with populations from density matrix theory, and implemented for a specific set of materials based on Si crystalline slabs and their nanostructured surfaces without and with adsorbed Ag clusters. The procedure accounts for charge mobility in semiconductors in photoexcited states, and specifically electron and hole photomobilities at Si(111) surfaces with and without adsorbed Ag clusters using ab initio energy bands and orbitals generated from a generalized gradient functional, however with excited energy levels modified to provide correct bandgaps. Photoexcited state populations for each band and carrier type were generated using steady state solution of a reduced density matrix which includes dissipative medium effects. The present calculations provide photoexcited electronic populations and photoinduced mobilities resulting from applied electric fields and obtained from the change of driven electron energies with their electronic momentum. Extensive results for Si slabs with 8 layers, without and with adsorbed Ag clusters, show that the metal adsorbates lead to substantial increases in the photomobility and photoconductivity of electrons and holes. PMID:26772554

  6. A Case Study Exploring the Use of GarageBand[TM] and an Electronic Bulletin Board in Preservice Music Education

    ERIC Educational Resources Information Center

    Vratulis, Vetta; Morton, Charlene

    2011-01-01

    This qualitative research study is an exploration of the merit and shortcomings of using a combination of the music software GarageBand[TM] and an electronic bulletin board to facilitate musical and peer learning in a 3-month elementary music methods curriculum and instruction course. A pedagogical objective of this assignment was to increase the…

  7. Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

    SciTech Connect

    Heo, Sung; Cho, Eunseog; Lee, Hyung-Ik; Park, Gyeong Su; Kang, Hee Jae; Nagatomi, T.; Choi, Pyungho; Choi, Byoung-Deog

    2015-07-15

    The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS) and high-energy resolution REELS (HR-REELS). HR-REELS with a primary electron energy of 0.3 keV revealed that the surface F center (FS) energy was located at approximately 4.2 eV above the valence band maximum (VBM) and the surface band gap width (E{sub g}{sup S}) was approximately 6.3 eV. The bulk F center (F{sub B}) energy was located approximately 4.9 eV above the VBM and the bulk band gap width was about 7.8 eV, when measured by REELS with 3 keV primary electrons. From a first-principles calculation, we confirmed that the 4.2 eV and 4.9 eV peaks were F{sub S} and F{sub B}, induced by oxygen vacancies. We also experimentally demonstrated that the HR-REELS peak height increases with increasing number of oxygen vacancies. Finally, we calculated the secondary electron emission yields (γ) for various noble gases. He and Ne were not influenced by the defect states owing to their higher ionization energies, but Ar, Kr, and Xe exhibited a stronger dependence on the defect states owing to their small ionization energies.

  8. Electronic conduction properties of indium tin oxide: single-particle and many-body transport.

    PubMed

    Lin, Juhn-Jong; Li, Zhi-Qing

    2014-08-27

    Indium tin oxide (Sn-doped In2O3-δ or ITO) is a very interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts mostly focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from room temperature down to liquid-helium temperatures have rarely been addressed thus far. Studies of the electrical-transport properties over a wide range of temperature are essential to unravelling the underlying electronic dynamics and microscopic electronic parameters. In this topical review, we show that one can learn rich physics in ITO material, including the semi-classical Boltzmann transport, the quantum-interference electron transport, as well as the many-body Coulomb electron-electron interaction effects in the presence of disorder and inhomogeneity (granularity). To fully reveal the numerous avenues and unique opportunities that the ITO material has provided for fundamental condensed matter physics research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline thin and thick films, homogeneous single-crystalline nanowires and inhomogeneous ultrathin films. In this manner, we not only address new physics phenomena that can arise in ITO but also illustrate the versatility of the stable ITO material forms for potential technological applications. We emphasize that, microscopically, the novel and rich electronic conduction properties of ITO originate from the inherited robust free-electron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which in turn causes the experimentally observed (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in

  9. Enhancement of Magnetic Stripe Order in Iron-Pnictide Superconductors from the Interaction between Conduction Electrons and Magnetic Impurities

    NASA Astrophysics Data System (ADS)

    Gastiasoro, Maria N.; Andersen, Brian M.

    2014-08-01

    Recent experimental studies have revealed several unexpected properties of Mn-doped BaFe2As2. These include extension of the stripelike magnetic (π,0) phase to high temperatures above a critical Mn concentration only, the presence of diffusive and weakly temperature dependent magnetic (π,π) checkerboard scattering, and an apparent absent structural distortion from tetragonal to orthorhombic symmetry. Here, we study the effects of magnetic impurities both below and above the Néel transition temperature within a real-space five-band model appropriate to the iron pnictides. We show how these experimental findings can be explained by a cooperative behavior of the magnetic impurities and the conduction electrons mediating the Ruderman-Kittel-Kasuya-Yosida interactions between them.

  10. PIC Simulations of the Effect of Velocity Space Instabilities on Electron Viscosity and Thermal Conduction

    NASA Astrophysics Data System (ADS)

    Riquelme, Mario A.; Quataert, Eliot; Verscharen, Daniel

    2016-06-01

    In low-collisionality plasmas, velocity-space instabilities are a key mechanism providing an effective collisionality for the plasma. We use particle-in-cell (PIC) simulations to study the interplay between electron- and ion-scale velocity-space instabilities and their effect on electron pressure anisotropy, viscous heating, and thermal conduction. The adiabatic invariance of the magnetic moment in low-collisionality plasmas leads to pressure anisotropy, {{Δ }}{p}j\\equiv {p}\\perp ,j-{p}\\parallel ,j\\gt 0, if the magnetic field {\\boldsymbol{B}} is amplified ({p}\\perp ,j and {p}\\parallel ,j denote the pressure of species j (electron, ion) perpendicular and parallel to {\\boldsymbol{B}}). If the resulting anisotropy is large enough, it can in turn trigger small-scale plasma instabilities. Our PIC simulations explore the nonlinear regime of the mirror, IC, and electron whistler instabilities, through continuous amplification of the magnetic field | {\\boldsymbol{B}}| by an imposed shear in the plasma. In the regime 1≲ {β }j≲ 20 ({β }j\\equiv 8π {p}j/| {\\boldsymbol{B}}{| }2), the saturated electron pressure anisotropy, {{Δ }}{p}{{e}}/{p}\\parallel ,{{e}}, is determined mainly by the (electron-lengthscale) whistler marginal stability condition, with a modest factor of ∼1.5–2 decrease due to the trapping of electrons into ion-lengthscale mirrors. We explicitly calculate the mean free path of the electrons and ions along the mean magnetic field and provide a simple physical prescription for the mean free path and thermal conductivity in low-collisionality β j ≳ 1 plasmas. Our results imply that velocity-space instabilities likely decrease the thermal conductivity of plasma in the outer parts of massive, hot, galaxy clusters. We also discuss the implications of our results for electron heating and thermal conduction in low-collisionality accretion flows onto black holes, including Sgr A* in the Galactic Center.

  11. Measurement of characteristics of an infrared free-electron laser with the L-band at Osaka University

    SciTech Connect

    Okuda, S.; Ishida, S.; Honda, Y.

    1995-12-31

    Free-electron laser (FEL) experiments have been conducted with the 38-MeV L-band electron linac at the Institute of Scientific and Industrial Research, Osaka University. It is a 1.3 GHz RF linac with a thermoionic gun, and equipped with two 12th and one 6th sub-harmonic prebunchers for producing the high-intensity single-bunch beam with a charge up to 67 nC/bunch. For oscillation experiments of FEL, the gun is replaced with that with a smaller cathode area in order to reduce the emittance of the beam. The normalized emittance has been measured to be 200 {pi} mm-mrad. The linac is operated in the long-pulse mode and one of the 12th sub-harmonic bunchers and the 6th sub-harmonic buncher are operated, so that the time duration of the macropulse is 4 {mu}s and the spacing between micropulses is 9.2 ns. The length of the micropulse is 30-40 ps and the charge in each micropulse is 2 nC. The electron beam from the linac is transported to a wiggler which has the period length of 6 cm and the number of periods of 32. The first half of the macropulse is lost in the transport line because the energy of electrons in that part gradually changes and there is a momentum slit in the transport line. An optical resonator is 5.53 m long and the round-trip time of light in it is 37 ns, which is precisely four times as long as the spacing of micropulses. Since the time duration of the macropulse passing through the wiggler is 1.8 {mu}s, the number of amplifications of light in the cavity is 49. The first lasing was achieved in 1994 at wavelengths between 32 and 40 {mu}m and preliminary results were reported at the l6th FEL Conference last year. The laser light was detected with a Ge:Be detector which has the time resolution of 3 {mu}s. Since the time duration of the macropulse of the laser fight is estimated to be less than 2 {mu}s, we could measure only the total energy in a macropulse of the output light.

  12. Demonstration of asymmetric electron conduction in pseudosymmetrical photosynthetic reaction centre proteins in an electrical circuit

    PubMed Central

    Kamran, Muhammad; Friebe, Vincent M.; Delgado, Juan D.; Aartsma, Thijs J.; Frese, Raoul N.; Jones, Michael R.

    2015-01-01

    Photosynthetic reaction centres show promise for biomolecular electronics as nanoscale solar-powered batteries and molecular diodes that are amenable to atomic-level re-engineering. In this work the mechanism of electron conduction across the highly tractable Rhodobacter sphaeroides reaction centre is characterized by conductive atomic force microscopy. We find, using engineered proteins of known structure, that only one of the two cofactor wires connecting the positive and negative termini of this reaction centre is capable of conducting unidirectional current under a suitably oriented bias, irrespective of the magnitude of the bias or the applied force at the tunnelling junction. This behaviour, strong functional asymmetry in a largely symmetrical protein–cofactor matrix, recapitulates the strong functional asymmetry characteristic of natural photochemical charge separation, but it is surprising given that the stimulus for electron flow is simply an externally applied bias. Reasons for the electrical resistance displayed by the so-called B-wire of cofactors are explored. PMID:25751412

  13. Kinetics of band bending and electron affinity at GaAs(001) surface with nonequilibrium cesium overlayers

    SciTech Connect

    Zhuravlev, A. G.; Savchenko, M. L.; Paulish, A. G.; Alperovich, V. L.; Scheibler, H. E.; Jaroshevich, A. S.

    2013-12-04

    The dosage dependences of surface band bending and effective electron affinity under cesium deposition on the Ga-rich GaAs(001) surface, along with the relaxation of these electronic properties after switching off the Cs source are experimentally studied by means of modified photoreflectance spectroscopy and photoemission quantum yield spectroscopy. At small Cs coverages, below half of a monolayer, additional features in the dosage dependence and subsequent downward relaxation of the photoemission current are determined by the variations of band bending. At coverages above half of a monolayer the upward relaxation of the photocurrent is caused supposedly by the decrease of the electron affinity due to restructuring in the nonequilibrium cesium overlayer.

  14. Electronically conductive perovskite-based oxide nanoparticles and films for optical sensing applications

    DOEpatents

    Ohodnicki, Jr., Paul R; Schultz, Andrew M

    2015-04-28

    The disclosure relates to a method of detecting a change in a chemical composition by contacting a electronically conducting perovskite-based metal oxide material with a monitored stream, illuminating the electronically conducting perovskite-based metal oxide with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The electronically conducting perovskite-based metal oxide has a perovskite-based crystal structure and an electronic conductivity of at least 10.sup.-1 S/cm, where parameters are specified at the gas stream temperature. The electronically conducting perovskite-based metal oxide has an empirical formula A.sub.xB.sub.yO.sub.3-.delta., where A is at least a first element at the A-site, B is at least a second element at the B-site, and where 0.8electronically conducting perovskite-based oxides include but are not limited to La.sub.1-xSr.sub.xCoO.sub.3, La.sub.1-xSr.sub.xMnO.sub.3, LaCrO.sub.3, LaNiO.sub.3, La.sub.1-xSr.sub.xMn.sub.1-yCr.sub.yO.sub.3, SrFeO.sub.3, SrVO.sub.3, La-doped SrTiO.sub.3, Nb-doped SrTiO.sub.3, and SrTiO.sub.3-.delta..

  15. Effect of band structure on the hot-electron transfer over Au photosensitized brookite TiO2.

    PubMed

    Zhao, Ming; Xu, Hua; Ouyang, Shuxin; Li, Dewang; Meng, Xianguang; Ye, Jinhua

    2016-02-01

    Au photosensitization can endow TiO2 visible-light-driven photocatalytic properties. Herein, via facet-optimized brookite TiO2 with tunable electronic band structures as the substrate, we found that intense visible light excitation of Au will result in the accumulation of hot-electrons, which will negatively shift the EF of Au and lower the Schottky barrier, thus ensuring their consecutive injections into the CB of TiO2; in this case, hot-electrons with more reduction potential will lead to superior photocatalytic activity. PMID:26784860

  16. Three dimensional magnetism and coupling to conduction electrons in PdCrO2

    SciTech Connect

    Ong, Khuong P; Singh, David J

    2012-01-01

    We report density functional calculations addressing the electronic structure and magnetic properties of delafossite PdCrO{sub 2}. We find substantial magnetic interactions in the c-axis direction as well as beyond first nearest neighbors in-plane, so that PdCrO{sub 2} is a three-dimensional (3D) frustrated antiferromagnet. We also find substantial coupling between the Cr moments and the Pd derived conduction electrons.

  17. Hydrogen production by high-temperature water splitting using electron-conducting membranes

    DOEpatents

    Lee, Tae H.; Wang, Shuangyan; Dorris, Stephen E.; Balachandran, Uthamalingam

    2004-04-27

    A device and method for separating water into hydrogen and oxygen is disclosed. A first substantially gas impervious solid electron-conducting membrane for selectively passing hydrogen is provided and spaced from a second substantially gas impervious solid electron-conducting membrane for selectively passing oxygen. When steam is passed between the two membranes at disassociation temperatures the hydrogen from the disassociation of steam selectively and continuously passes through the first membrane and oxygen selectively and continuously passes through the second membrane, thereby continuously driving the disassociation of steam producing hydrogen and oxygen.

  18. Printable elastic conductors with a high conductivity for electronic textile applications.

    PubMed

    Matsuhisa, Naoji; Kaltenbrunner, Martin; Yokota, Tomoyuki; Jinno, Hiroaki; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao

    2015-01-01

    The development of advanced flexible large-area electronics such as flexible displays and sensors will thrive on engineered functional ink formulations for printed electronics where the spontaneous arrangement of molecules aids the printing processes. Here we report a printable elastic conductor with a high initial conductivity of 738 S cm(-1) and a record high conductivity of 182 S cm(-1) when stretched to 215% strain. The elastic conductor ink is comprised of Ag flakes, a fluorine rubber and a fluorine surfactant. The fluorine surfactant constitutes a key component which directs the formation of surface-localized conductive networks in the printed elastic conductor, leading to a high conductivity and stretchability. We demonstrate the feasibility of our inks by fabricating a stretchable organic transistor active matrix on a rubbery stretchability-gradient substrate with unimpaired functionality when stretched to 110%, and a wearable electromyogram sensor printed onto a textile garment. PMID:26109453

  19. Printable elastic conductors with a high conductivity for electronic textile applications

    PubMed Central

    Matsuhisa, Naoji; Kaltenbrunner, Martin; Yokota, Tomoyuki; Jinno, Hiroaki; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao

    2015-01-01

    The development of advanced flexible large-area electronics such as flexible displays and sensors will thrive on engineered functional ink formulations for printed electronics where the spontaneous arrangement of molecules aids the printing processes. Here we report a printable elastic conductor with a high initial conductivity of 738 S cm−1 and a record high conductivity of 182 S cm−1 when stretched to 215% strain. The elastic conductor ink is comprised of Ag flakes, a fluorine rubber and a fluorine surfactant. The fluorine surfactant constitutes a key component which directs the formation of surface-localized conductive networks in the printed elastic conductor, leading to a high conductivity and stretchability. We demonstrate the feasibility of our inks by fabricating a stretchable organic transistor active matrix on a rubbery stretchability-gradient substrate with unimpaired functionality when stretched to 110%, and a wearable electromyogram sensor printed onto a textile garment. PMID:26109453

  20. Printable elastic conductors with a high conductivity for electronic textile applications

    NASA Astrophysics Data System (ADS)

    Matsuhisa, Naoji; Kaltenbrunner, Martin; Yokota, Tomoyuki; Jinno, Hiroaki; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao

    2015-06-01

    The development of advanced flexible large-area electronics such as flexible displays and sensors will thrive on engineered functional ink formulations for printed electronics where the spontaneous arrangement of molecules aids the printing processes. Here we report a printable elastic conductor with a high initial conductivity of 738 S cm-1 and a record high conductivity of 182 S cm-1 when stretched to 215% strain. The elastic conductor ink is comprised of Ag flakes, a fluorine rubber and a fluorine surfactant. The fluorine surfactant constitutes a key component which directs the formation of surface-localized conductive networks in the printed elastic conductor, leading to a high conductivity and stretchability. We demonstrate the feasibility of our inks by fabricating a stretchable organic transistor active matrix on a rubbery stretchability-gradient substrate with unimpaired functionality when stretched to 110%, and a wearable electromyogram sensor printed onto a textile garment.

  1. Power factor improvement and thermal conductivity reduction---By band engineering and modulation-doping in nanocomposites

    NASA Astrophysics Data System (ADS)

    Yu, Bo

    Thermoelectrics, as one promising approach for solid-state energy conversion between heat and electricity, is becoming increasingly important within the last a couple of decades as the availability and negative environmental impact of fossil fuels draw increasing attention. Therefore, various thermoelectric materials in a wide working temperature range from room temperature to 1000 °C for power generation or below zero for cooling applications have been intensively studied. In general, the efficiency of thermoelectric devices relies on the dimensionless figure-of-merit (ZT) of the material, defined as ZT=(S2sigma)T/kappa, where S is the Seebeck coefficient, sigma the electrical conductivity, kappa the thermal conductivity (sum of the electronic part, the lattice part, and the bipolar contribution at high temperature region), and T the absolute temperature during operation. Techniques to measure those individual parameters will be discussed in the 2nd chapter while the 1 st chapter mainly covers the fundamental theory of thermoelectrics. Recently, the idea of using various nanostructured materials to further improve the ZT of conventional thermoelectric materials has led to a renewed interest. Among these types of nanostructured materials, nanocomposites which mainly denote for the nano-grained bulk materials or materials with nano-sized inclusions are the major focus of our study. For nanocomposites, the enhancement in ZT mainly comes from the low lattice thermal conductivity due to the suppressed phonon transport by those interfaces or structure features in the nanometer scale without deteriorating the electron transport. In the last few years, we have successfully demonstrated in several materials systems (Bismuth Telluride, Skutterudites, Silicon Germanium) that ball milling followed by hot pressing is an effective way for preparing large quantities of those nanocomposite thermoelectric materials with high ZT values in the bulk form. Therefore, in the 3rd part

  2. Generation and application of a subpicosecond high brightness electron single bunch at the S-band linear accelerator

    NASA Astrophysics Data System (ADS)

    Uesaka, Mitsuru; Kozawa, Takahiro; Kobayashi, Toshiaki; Ueda, Toru; Miya, Kenzo

    1996-04-01

    A subpicosecond 37-MeV electron single bunch was generated at the S-band linear accelerator of the Nuclear Engineering Research Laboratory, University of Tokyo. An original single bunch with a pulse width (FWHM) of less than 10 picoseconds was successfully compressed to a subpicosecond time domain by achromatic magnetic pulse compression. The energy modulation was optimally matched to the magnetic optics to achieve the most effective compression by tuning RF power and phase of the microwave. A femtosecond streak camera with a time resolution of 200 fs was used to measure the pulse shape of electron bunches by one shot via Cherenkov radiation emitted by the electrons in air. The specification of optical components was also optimized to avoid pulse broadening due to optical dispersion. Finally, the shortest pulse width in FWHM is 0.7ps in the best operating mode. The compressed bunch has an electric charge of 1 nC (6.2×109 electrons) on average. The subpicosecond electron single bunch will be utilized for exploration of ultrafast and fundamental radiation physics and chemistry. As the next project, we propose a femtosecond ultrafast quantum phenomena research facility where both 100-fs electron and laser pulses will be available. Especially, an X-band (11.424-GHz) femtosecond electron linac is under design.

  3. Evidence of Eu{sup 2+} 4f electrons in the valence band spectra of EuTiO{sub 3} and EuZrO{sub 3}

    SciTech Connect

    Kolodiazhnyi, T.; Valant, M.; Williams, J. R.; Bugnet, M.; Botton, G. A.; Ohashi, N.; Sakka, Y.

    2012-10-15

    We report on optical band gap and valence electronic structure of two Eu{sup 2+}-based perovskites, EuTiO{sub 3} and EuZrO{sub 3} as revealed by diffuse optical scattering, electron energy loss spectroscopy, and valence-band x-ray photoelectron spectroscopy. The data show good agreement with the first-principles studies in which the top of the valence band structure is formed by the narrow Eu 4f{sup 7} electron band. The O 2p band shows the features similar to those of the Ba(Sr)TiO{sub 3} perovskites except that it is shifted to higher binding energies. Appearance of the Eu{sup 2+} 4f{sup 7} band is a reason for narrowing of the optical band gap in the title compounds as compared to their Sr-based analogues.

  4. Dayside auroral-oval plasma density and conductivity enhancements due to magnetosheath electron precipitation.

    NASA Technical Reports Server (NTRS)

    Kennel, C. F.; Rees, M. H.

    1972-01-01

    Demonstration that magnetosheath electrons precipitating into the dayside auroral oval are a significant source of ionization and consequently will lead to electrical conductivity enhancements within the oval. By assuming that the electrons are maintained isotropic by strong pitch-angle diffusion as they precipitate into the ionosphere, the precipitation heat flux can be simply related to solar-wind energy density and consequently to the level of magnetic activity. For quiet solar-wind conditions, the heat fluxes of 1 to 10 ergs/sq cm/sec expected and observed lead to height-integrated Pedersen conductivity enhancements of 4 to 15 mhos. During magnetic storms the conductivity enhancements could increase by a factor of 3 to 5. Since the precipitating electrons are soft, the Hall conductivity enhancements are smaller than the Pedersen conductivity enhancements. For typical electric fields the computed conductivity enhancements lead to field-aligned currents bounding the enhancements in order-of-magnitude agreement with observation. The topside ionosphere should also have a density enhancement over the auroral oval on the dayside.

  5. Determination of electron and ion thermal conductivities by analysis of Alcator-A profile data

    NASA Astrophysics Data System (ADS)

    Liewer, P. C.; Pfeiffer, W.; Waltz, R. E.

    1983-02-01

    Profile data from the Alcator-A tokamak are analyzed using the onetwo transport code to study thermal conductivities and power balance. It is found that the observed central ion temperatures can be explained by assuming an ion thermal conductivity equal to the neoclassical value as calculated recently by Bolton and Ware. For low density, n¯=1×1014 cm-3, the possible anomaly in the ion conductivity is small: ±30% of the Bolton-Ware value. The anomalous electron thermal conductivity as deduced from the profile data is = ≂2.5(±1.5)×1017 cm-1 sec-1. The power balance study shows that at low densities, electron energy losses from radiation and thermal conduction are equally important, and both are larger than the exchanges loss to the ions. At higher densities, n¯≥2×1014 cm-3, electron energy losses by thermal conduction and exchange are equally important, and both are larger than the radiation loss. Convective losses, as calculated from measured particle confinement times, are negligible for all densities analyzed.

  6. Single electron bipolar conductance switch driven by the molecular Aharonov-Bohm effect.

    PubMed

    Lee, Joonhee; Tallarida, Nicholas; Rios, Laura; Perdue, Shawn M; Apkarian, Vartkess Ara

    2014-06-24

    We demonstrate a conductance switch controlled by the spin-vibronic density of an odd electron on a single molecule. The junction current is modulated by the spin-flip bistability of the electron. Functional images are provided as wiring diagrams for control of the switch's frequency, amplitude, polarity, and duty-cycle. The principle of operation relies on the quantum mechanical phase associated with the adiabatic circulation of a spin-aligned electron around a conical intersection. The functional images quantify the governing vibronic Hamiltonian. PMID:24824563

  7. Absolute stability in a collisionless electron-heat-conducting plasma in strong magnetic fields

    NASA Astrophysics Data System (ADS)

    de la Torre, A.; Duhau, S.

    1989-02-01

    The dispersion relation obtained from a linear analysis of the hydrodynamic system of equations of Duhau is used to study the behaviour of the fast and slow magnetosonic and entropy modes in an electron-heat-flux-conducting plasma. The evolution of the hydrodynamic modes different from the Alfvén mode are studied as the electron heat flux is increased from zero as well as around the borders of overstable regions, for any anisotropy condition of the ions. The development of the domains of mirror and electron-heat-flux overstabilities are established and the regions of absolute stability are shown

  8. Development of thermal rectifier using unusual electron thermal conductivity of icosahedral quasicrystals

    NASA Astrophysics Data System (ADS)

    Takeuchi, Tsunehiro

    2015-03-01

    The bulk thermal rectifiers usable at high temperature were developed using the unusual increase of electron thermal conductivity of icosahedral quasicrystals (ICQ's) at high temperature. Our previously performed analyses in terms of linear response theory suggested that the unusual increase of electron thermal conductivity of ICQ was brought about by the synergy effect of quasiperiodicity and narrow pseudogap at the Fermi level. Since the linear response theory suggests that the unusual increase of electron thermal conductivity is coupled with the small magnitude of Seebeck coefficient, the composition of Al-Cu-Fe ICQ, where the thermal conductivity shows the most significant increase with increasing temperature, was determined with a great help of Seebeck coefficient measurements. Consequently obtained Al61.5Cu26.5Fe12.0 ICQ, which was characterized by the small magnitude of Seebeck coefficient, possessed 9 times larger value of thermal conductivity at 1000 K than that observed at 300 K. The increasing tendency of electron thermal conductivity with increasing temperature was further enhanced by means of small amount of Re substitution for Fe. This substitution definitely reduced the lattice thermal conductivity while the electron thermal conductivity was kept unchanged. The lattice thermal conductivity was reduced by 35 % under the presence of 0.5 at.% Re, and the thermal conductivity at 1000 K consequently became about 11 times larger than that at 300 K. The thermal rectifiers were constructed using our newly developed ICQ (Al61.5Cu26.5Fe12.0 or Al61.0Si0.5Cu26.5Fe11.5Re0.5) together with one of the selected materials (Si, Al2O3, CuGeTe2 or Ag2Te) that possess thermal conductivity decreasing with increasing temperature. The heat current flowing in the rectifiers was confirmed to show significant direction dependence. The consequently obtained TRR =|Jlarge|/ |Jsmall | for the composite consisting of

  9. Tunable Mixed Ionic/Electronic Conductivity and Permittivity of Graphene Oxide Paper for Electrochemical Energy Conversion.

    PubMed

    Bayer, Thomas; Bishop, Sean R; Perry, Nicola H; Sasaki, Kazunari; Lyth, Stephen M

    2016-05-11

    Graphene oxide (GO) is a two-dimensional graphitic carbon material functionalized with oxygen-containing surface functional groups. The material is of interest in energy conversion, sensing, chemical processing, gas barrier, and electronics applications. Multilayer GO paper has recently been applied as a new proton conducting membrane in low temperature fuel cells. However, a detailed understanding of the electrical/dielectric properties, including separation of the ionic vs electronic contributions under relevant operating conditions, has so far been lacking. Here, the electrical conductivity and dielectric permittivity of GO paper are investigated in situ from 30 to 120 °C, and from 0 to 100% relative humidity (RH) using impedance spectroscopy. These are related to the water content, measured by thermogravimetric analysis. With the aid of electron blocking measurements, GO is demonstrated to be a mixed electronic-protonic conductor, and the ion transference number is derived for the first time. For RH > 40%, conductivity is dominated by proton transport (with a maximum of 0.5 mS/cm at 90 °C and 100% RH). For RH < 40%, electronic conductivity dominates (with a maximum of 7.4 mS/cm at ∼80 °C and 0% RH). The relative permittivity of GO paper increases with decreasing humidity, from ∼10 at 100% RH to several 1000 at 10% RH. These results underline the potential of GO for application not only as a proton conducting electrolyte but also as a mixed conducting electrode material under appropriate conditions. Such materials are highly applicable in electrochemical energy conversion and storage devices such as fuel cells and electrolyzers. PMID:27088238

  10. Band Theory for the Electronic and Magnetic Properties of VO2 Phases

    NASA Astrophysics Data System (ADS)

    Shen, Xiao; Xu, Sheng; Hallman, Kent; Haglund, Richard; Pantelides, Sokrates

    VO2 is widely studied for the insulator-metal transition between the monoclinic M1 (insulator) and rutile R (metal) phases. Recent experiments show that in addition to the M1 and R phases, VO2 has a rich phase diagram including a recently identified metallic monoclinic phase, making the material particularly intriguing. The origin of the band gap in the insulating phase of VO2 has been a subject of debate. It was suggested that the insulating phase cannot be described by band theory and thus strong correlations must be invoked. However, recent band calculations using density functional theory (DFT) with a hybrid functional and standard pseudopotentials correctly obtains a band gap for the M1 insulating phase. Subsequent calculations, however, found that the magnetic properties of VO2 phases are not correctly described by such calculations. Here we present DFT calculations using a tuned hybrid functional and hard pseudopotentials that reproduce both the band gaps and the magnetic properties of the known VO2 phases. Thus, it is appropriate to use band theory to describe VO2 phases without invoking strong correlations. Furthermore, using the band theory treatment, we identify a candidate for the metallic monoclinic phase. Doe DE-FG02-09ER46554, NSF EECS-1509740.

  11. Orbital Magnetism of Bloch Electrons: II. Application to Single-Band Models and Corrections to Landau-Peierls Susceptibility

    NASA Astrophysics Data System (ADS)

    Ogata, Masao

    2016-06-01

    Orbital susceptibility for Bloch electrons is calculated for the first time up to the first order with respect to overlap integrals between the neighboring atomic orbitals, assuming single-band models. A general and rigorous theory of orbital susceptibility developed in the preceding paper is applied to single-band models in two-dimensional square and triangular lattices. In addition to the Landau-Peierls orbital susceptibility, it is found that there are comparable contributions from the Fermi surface and from the occupied states in the partially filled band called intraband atomic diamagnetism. This result means that the Peierls phase used in tight-binding models is insufficient as the effect of magnetic field.

  12. Flat band analogues and flux driven extended electronic states in a class of geometrically frustrated fractal networks.

    PubMed

    Nandy, Atanu; Pal, Biplab; Chakrabarti, Arunava

    2015-04-01

    We demonstrate, by explicit construction, that a single band tight binding Hamiltonian defined on a class of deterministic fractals of the b = 3N Sierpinski type can give rise to an infinity of dispersionless, flat-band like states which can be worked out analytically using the scale invariance of the underlying lattice. The states are localized over clusters of increasing sizes, displaying the existence of a multitude of localization areas. The onset of localization can, in principle, be 'delayed' in space by an appropriate choice of the energy of the electron. A uniform magnetic field threading the elementary plaquettes of the network is shown to destroy this staggered localization and generate absolutely continuous sub-bands in the energy spectrum of these non-translationally invariant networks. PMID:25751071

  13. Modeling of thin film explosive boiling—surface evaporation and electron thermal conductivity effect

    NASA Astrophysics Data System (ADS)

    Mazhukin, V. I.; Samokhin, A. A.; Shapranov, A. V.; Demin, M. M.

    2015-01-01

    Phase transition in a thin liquid Al film during its rapid (sub) nanosecond homogeneous heating is studied in the framework of molecular dynamics simulation with electron thermal conductivity. The results are compared with our previous results without consideration of electron thermal conductivity. Surface evaporation leads to surface cooling and this effect is more pronounced at lower heating rates in the case without electron thermal conductivity. For the case with electron thermal conductivity, the obtained results suggest the existence of four different regimes of film behavior depending on the heating rate: quasi-stationary surface evaporation regime with relatively small fluctuations at the low heating rates, explosive (volume) boiling which is initiated as growth of a single fluctuation, spinodal decomposition with many fluctuations growing simultaneously and supercritical fluid expansion with no pronounced fluctuations at the high heating rates. Our calculations also show that the duration and magnitude of the explosive boiling pressure pulse, which occurs at the threshold heating rate, are about 0.3 ns and one third of the critical pressure value, respectively. Information of this kind is needed to determine the optimal conditions for the measurement of the critical parameters of different materials in laser ablation experiments.

  14. Structural control of mixed ionic and electronic transport in conducting polymers

    DOE PAGESBeta

    Rivnay, Jonathan; Inal, Sahika; Collins, Brian A.; Sessolo, Michele; Stavrinidou, Eleni; Strakosas, Xenofon; Tassone, Christopher; Delongchamp, Dean M.; Malliaras, George G.

    2016-04-19

    Poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate), PEDOT:PSS, has been utilized for over two decades as a stable, solution-processable hole conductor. While its hole transport properties have been the subject of intense investigation, recent work has turned to PEDOT:PSS as a mixed ionic/electronic conductor in applications including bioelectronics, energy storage and management, and soft robotics. Conducting polymers can efficiently transport both holes and ions when sufficiently hydrated, however, little is known about the role of morphology on mixed conduction. Here, we show that bulk ionic and electronic mobilities are simultaneously affected by processing-induced changes in nano- and meso-scale structure in PEDOT:PSS films. Wemore » quantify domain composition, and find that domain purification on addition of dispersion co-solvents limits ion mobility, even while electronic conductivity improves. We show that an optimal morphology allows for the balanced ionic and electronic transport that is critical for prototypical mixed conductor devices. As a result, these findings may pave the way for the rational design of polymeric materials and processing routes to enhance devices reliant on mixed conduction.« less

  15. Structural control of mixed ionic and electronic transport in conducting polymers

    NASA Astrophysics Data System (ADS)

    Rivnay, Jonathan; Inal, Sahika; Collins, Brian A.; Sessolo, Michele; Stavrinidou, Eleni; Strakosas, Xenofon; Tassone, Christopher; Delongchamp, Dean M.; Malliaras, George G.

    2016-04-01

    Poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate), PEDOT:PSS, has been utilized for over two decades as a stable, solution-processable hole conductor. While its hole transport properties have been the subject of intense investigation, recent work has turned to PEDOT:PSS as a mixed ionic/electronic conductor in applications including bioelectronics, energy storage and management, and soft robotics. Conducting polymers can efficiently transport both holes and ions when sufficiently hydrated, however, little is known about the role of morphology on mixed conduction. Here, we show that bulk ionic and electronic mobilities are simultaneously affected by processing-induced changes in nano- and meso-scale structure in PEDOT:PSS films. We quantify domain composition, and find that domain purification on addition of dispersion co-solvents limits ion mobility, even while electronic conductivity improves. We show that an optimal morphology allows for the balanced ionic and electronic transport that is critical for prototypical mixed conductor devices. These findings may pave the way for the rational design of polymeric materials and processing routes to enhance devices reliant on mixed conduction.

  16. Structural control of mixed ionic and electronic transport in conducting polymers

    PubMed Central

    Rivnay, Jonathan; Inal, Sahika; Collins, Brian A.; Sessolo, Michele; Stavrinidou, Eleni; Strakosas, Xenofon; Tassone, Christopher; Delongchamp, Dean M.; Malliaras, George G.

    2016-01-01

    Poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate), PEDOT:PSS, has been utilized for over two decades as a stable, solution-processable hole conductor. While its hole transport properties have been the subject of intense investigation, recent work has turned to PEDOT:PSS as a mixed ionic/electronic conductor in applications including bioelectronics, energy storage and management, and soft robotics. Conducting polymers can efficiently transport both holes and ions when sufficiently hydrated, however, little is known about the role of morphology on mixed conduction. Here, we show that bulk ionic and electronic mobilities are simultaneously affected by processing-induced changes in nano- and meso-scale structure in PEDOT:PSS films. We quantify domain composition, and find that domain purification on addition of dispersion co-solvents limits ion mobility, even while electronic conductivity improves. We show that an optimal morphology allows for the balanced ionic and electronic transport that is critical for prototypical mixed conductor devices. These findings may pave the way for the rational design of polymeric materials and processing routes to enhance devices reliant on mixed conduction. PMID:27090156

  17. Applications of high thermal conductivity composites to electronics and spacecraft thermal design

    NASA Technical Reports Server (NTRS)

    Sharp, G. Richard; Loftin, Timothy A.

    1990-01-01

    Recently, high thermal conductivity graphite fiber-reinforced metal matrix composites (MMCs) have become available that can save weight over present methods of heat conduction. Another significant advantage is that these materials can be used without the plumbing and testing complexities that accompany the use of liquid heat pipes. A spinoff of this research was the development of other MMCs as electronic device heat sinks. These use particulates rather than fibers and are formulated to match the coefficient of thermal expansion of electronic substrates in order to alleviate thermally induced stresses. The development of both types of these materials as viable weight-saving substitutes for the traditional methods of thermal control for electronics packaging and also for spacecraft thermal control applications are the subjects of this report.

  18. Phonon-Induced Electron-Hole Excitation and ac Conductance in Molecular Junction

    NASA Astrophysics Data System (ADS)

    Ueda, Akiko; Utsumi, Yasuhiro; Imamura, Hiroshi; Tokura, Yasuhiro

    2016-04-01

    We investigate the linear ac conductance of molecular junctions under a fixed dc bias voltage in the presence of an interaction between a transporting electron and a single local phonon in a molecule with energy ω0. The electron-phonon interaction is treated by the perturbation expansion. The ac conductance as a function of the ac frequency ωac decreases or increases compared with the noninteracting case depending on the magnitude of the dc bias voltage. Furthermore, a dip emerges at ωac ˜ 2ω0. The dip originates from the modification of electron-hole excitation by the ac field, which cannot be obtained by treating the phonon in the linear regime of a classical forced oscillation.

  19. Spin relaxation of conduction electrons by inelastic scattering with neutral donors

    NASA Astrophysics Data System (ADS)

    Qing, Lan; Dery, Hanan; Li, Jing; Appelbaum, Ian

    2015-03-01

    At low temperatures in n-doped semiconductors, a significant fraction of shallow donor sites are occupied by electrons, neutralizing the impurity core charge in equilibrium. Inelastic scattering by externally-injected conduction electrons accelerated by electric fields can excite transitions within the manifold of these localized states. Promotion into highly spin-mixed excited states results in spin relaxation that couples strongly to the conduction electrons by exchange interaction. Through experiments with silicon spin transport devices and complementary theory, we reveal the consequences of this previously unknown depolarization mechanism both below and above the impact ionization threshold and into the ``deep inelastic'' regime. This work is supported by NSF under Contracts ECCS-1231570 and ECCS-1231855, by DTRA under Contract HDTRA1-13-1-0013, and by ONR under Contract N000141410317.

  20. Dynamic tunneling force microscopy for characterizing electronic trap states in non-conductive surfaces

    NASA Astrophysics Data System (ADS)

    Wang, R.; Williams, C. C.

    2015-09-01

    Dynamic tunneling force microscopy (DTFM) is a scanning probe technique for real space mapping and characterization of individual electronic trap states in non-conductive films with atomic scale spatial resolution. The method is based upon the quantum mechanical tunneling of a single electron back and forth between a metallic atomic force microscopy tip and individual trap states in completely non-conducting surface. This single electron shuttling is measured by detecting the electrostatic force induced on the probe tip at the shuttling frequency. In this paper, the physical basis for the DTFM method is unfolded through a physical model and a derivation of the dynamic tunneling signal as a function of several experimental parameters is shown. Experimental data are compared with the theoretical simulations, showing quantitative consistency and verifying the physical model used. The experimental system is described and representative imaging results are shown.