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Sample records for crossed-field diode sputtering

  1. Thin film deposition by electric and magnetic crossed-field diode sputtering. [Patent application

    DOEpatents

    Welch, K.M.

    1975-04-04

    Applying a coating of titanium nitride to a klystron window by means of a cross-field diode sputtering array is described. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent to a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate, and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thickness. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multifactoring under operating conditions of the components.

  2. Thin film deposition by electric and magnetic crossed-field diode sputtering

    DOEpatents

    Welch, Kimo M.

    1977-01-01

    Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

  3. Thin film deposition by electric and magnetic crossed-field diode sputtering

    DOEpatents

    Welch, Kimo M.

    1980-01-01

    Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

  4. Role of ions in a crossed-field diode.

    PubMed

    Lau, Y Y; Luginsland, J W; Cartwright, K L; Haworth, M D

    2007-01-01

    The effect of ions in a magnetically insulated crossed-field gap is studied using a single particle orbit model, shear flow model, and particle-in-cell simulation. It is found that, in general, the presence of ions in a crossed-field gap always increases the electrons' excursion toward the anode region, regardless of the location of the ions. Thus, the rate at which the electrons migrate toward the anode, which is a measure of the diode closure rate, is related to the rate at which ions are introduced into the crossed-field gap. This anode migration of electrons is unrelated to crossed-field ambipolar diffusion. The implications of these findings are explored, such as pulse shortening in relativistic magnetrons and bipolar flows in pulsed-power systems. PMID:17358481

  5. Rapid current transition in a crossed-field diode

    SciTech Connect

    Verboncoeur, J.P.; Birdsall, C.K.

    1996-03-01

    The transmitted current in a crossed-field gap has been characterized analytically by a number of authors. Using a one dimensional PIC simulation, we explore the behavior of the crossed-field diode at {ital B}={ital B}{sub {ital Hull}}. For mono-energetic (cold) emission, a rapid reduction of transmitted current is observed when the injected current exceeds the critical current by just 1{percent}. The addition of a small electron temperature normal to the cathode eliminates the transition, even for {ital kT}/{ital V}{approximately}10{sup {minus}5} ({ital V}=10 kV, gap = 1 cm, {ital B}=337 G, {ital J}=1.69 A/cm{sup 2}), while an isotropic velocity distribution accelerates the transition. {copyright} {ital 1996 American Institute of Physics.}

  6. Evolution of Modes in Magnetically Insulated Crossed-Field Diodes

    NASA Astrophysics Data System (ADS)

    Cartwright, Keith

    2005-10-01

    The time-dependent behavior of electron sheaths in a magnetically insulated B>BHull anode-cathode gap with crossed electric and magnetic fields is studied. The crossed-field, diode is modeled for various magnetic fields by means of multidimensional (1d and 2d), self-consistent, electromagnetic, particle-in-cell (PIC) simulations. The transient behavior of the system is examined in detail and is divided into three separate stages: cycloidal flow, collapse of cycloidal flow and sheared (near-Brillouin) flow. It has been shown in 1d planar geometry that the cycloidal flows collapse into a steady, near-Brillouin flow. Our 2d electromagnetic PIC simulations (both planar and cylindrical) show that cycloidal flows also collapses into a flow that is dominated by the E cross B drift, but is neither steady nor stable. The growth of the kinetic mode is faster than that of either magnetron or diocotron fluid instability. After the kinetic mode saturates, the fastest growing fluid mode grows to dominate the system. A slow wave structure (SWS) is added to the anode that matches the wavelength and frequency of the fastest growing fluid instability. The SWS is then perturbed so that wavelength and/or frequency does not match the smooth bore diode growth rate and the region of `lock-in' to the SWS is found. This work is supported by a grant from AFOSR.

  7. Evolution of Modes in Magnetically Insulated Crossed Field Diodes

    NASA Astrophysics Data System (ADS)

    Takeall, S.; Greenwood, A.; Cartwright, K.; Fleming, T.; Mardahl, P.; Lau, Y. Y.; Roderick, N.

    2006-10-01

    The time-dependent behavior of electron sheaths in a magnetically insulated B>BHull anode-cathode gap with crossed electric and magnetic fields is studied. The crossed-field, space-charge limited diode is modeled for various magnetic fields by means of multidimensional (1d and 2d), self consistent, electromagnetic, particle-in-cell (PIC) simulations in both cylindrical and planar geometries. The transient behavior of the system is examined in detail and is divided into three separate stages: cycloidal flow, collapse of cycloidal flow and sheared (near-Brillouin) flow. Our 2d electromagnetic PIC simulations (both planar and cylindrical) show that cycloidal flow also collapses into a perturbed flow that is dominated by the E cross B drift, but is neither steady nor stable. This observed cycloidal flow instability is a kinetic mode, not a fluid mode such as the magnetron or diocotron instability. The growth of the kinetic mode is faster than that of either of the above mentioned fluid instabilities. After the kinetic mode saturates, the fastest growing fluid mode grows to dominate the system. The SWS is added by three different methods to separate the RF effects from the DC electric field effects created by the SWS. The first method is to add a circuit to the anode that does not effect the DC electric fields, the second is to add the SWS by placing a thin dielectric (with and unphysical large dielectric constant), and last is to add the geometric SWS.

  8. Similarity of stability characteristics of planar and coaxial crossed-field diodes

    SciTech Connect

    Gopinath, V.P.; Verboncoeur, J.P.; Birdsall, C.K.

    1996-07-01

    Simulations of cylindrical crossed-field diodes for anode/cathode radius ratios of 2 and 5 indicate that the limiting current curve in the region {ital B}{lt}{ital B}{sub {ital H}} in coaxial diodes follows the planar theory and simulations very closely. Coaxial diodes also follow planar theory predicting transition to turbulence in the region {ital B}{approx_gt}{ital B}{sub {ital H}}. Larger radius ratio (10, 20) diodes show somewhat larger limits. These results show little variation with respect to operating voltage or cathode radius. A possible explanation for this behavior is also examined. {copyright} {ital 1996 American Institute of Physics.}

  9. Measurement and interpretation of current transmission in a crossed-field diode below cutoff

    SciTech Connect

    Vanderberg, B.H.; Eninger, J.E.

    1997-02-01

    Measurements on the current-voltage-magnetic field characteristics of a space-charge-limited cylindrical cross-field diode below cutoff are presented. The measured current is found to be lower than predicted by simple cold-fluid theory. This reduction combined with observed oscillations in the current can be explained by secondary electron emission from the anode, leading to an increase of space charge in the diode. {copyright} {ital 1997 American Institute of Physics.}

  10. Measurement and interpretation of current transmission in a crossed-field diode below cutoff

    NASA Astrophysics Data System (ADS)

    Vanderberg, Bo H.; Eninger, Jan E.

    1997-02-01

    Measurements on the current-voltage-magnetic field characteristics of a space-charge-limited cylindrical cross-field diode below cutoff are presented. The measured current is found to be lower than predicted by simple cold-fluid theory. This reduction combined with observed oscillations in the current can be explained by secondary electron emission from the anode, leading to an increase of space charge in the diode.

  11. Modeling the effects of anode secondary electron emission on transmitted current in crossed-field diodes

    NASA Astrophysics Data System (ADS)

    Gopinath, Venkatesh; Vanderberg, Bo

    1996-11-01

    Recent experimental measurements of transmitted current in a crossed-field switch by Vanderberg and Eninger ( B. H. Vanderberg and J. E. Eninger, ``Space-charge limited current cut-off in crossed fields,'' presented at IEEE ICOPS'95, Madison, Wi. ) have shown that the measured values of transmitted current are significantly smaller than the theoretically predicted limit. The experiments also showed larger decrease in transmitted current for higher magnetic fields, implying an effect due to the higher angle of incidence of incident electrons (i.e., at values of B closer to B_H). Studies by Verboncoeur and Birdsall ( J. P. Verboncoeur and C. K. Birdsall. ``Rapid current transition in a crossed-field diode,'' Phys. Plasmas 3) 3, March 1996. have shown that even small amount ( < 1%) of over injection in a crossed-field diode near cut-off led to substantial decrease in transmitted current. In our current work, we show that the same effect can be triggered by the presence of secondary electron emission from the anode. This study models the dependence of emission upon incident electron angle and energy. Since the yield of secondary electrons increases with incident angle, this model follows the experimental results as B approaches B_Hull accurately. This work was supported in part by ONR under grant FD-N00014-90-J-1198

  12. Simulations of limiting current in a crossed-field gap: Hull diode

    SciTech Connect

    Verboncoeur, J.P.; Birdsall, C.K.

    1994-12-31

    Simulations confirm the Hull cutoff as the limiting stable current for a space charge limited planar crossed-field diode, proposed by Lau. In addition, a current occurs beyond the Hull cutoff, with a near-zero average value plus a high frequency oscillatory component which dies rapidly in time. The diode reacts strongly to small increases in injection current above the current limit and magnetic field above the Hull cutoff, with a rapid reduction of transmitted current. The simulations are performed in 1D3V, using PDP1.

  13. Relaxation of virtual cathode oscillations due to transverse effects in a crossed-field diode

    SciTech Connect

    Cartwright, K.L.; Verboncoeur, J.P.; Gopinath, V.P.; Birdsall, C.K.

    1996-12-31

    Recent studies of cylindrical and planar cross-field diodes indicate the transverse dimension plays a role in delaying the onset of virtual cathode oscillations for currents injected above the theoretical limiting current. For 1d and 2d planar devices, the limiting current for the magnetized and unmagnetized diodes is examined for cold and thermal injection. A significant difference between the 1d and 2d smooth diodes is that the transverse direction gives an extra degree of freedom which is found to warm the electrons rapidly. The mechanism of this warming appears to be an instability in the transverse direction. The simulations show three different states; laminar flow, virtual cathode oscillation and warm flow. Warm flow occurs when the electron has a spread of energy, either due to an instability or by thermal injection, when they pas through the potential minimum. Birdsall and Bridges showed that a small thermal spread of injected electrons damps virtual cathode oscillations. This warming effect allows warm flow to exist on the 2d state diagram which is not found on the 1d state diagram for cold emission. Parameter space is explored on these state diagrams for B = 0 and B = B{sub Hull} for J near state transitions (J {approx_equal} J{sub C}).

  14. Sputtering

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1976-01-01

    The potential of using the sputtering process as a deposition technique is reviewed; however, the manufacturing and sputter etching aspects are also discussed. The basic mechanism for dc and rf sputtering is described. Sputter deposition is presented in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter etching, target geometry (coating and complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also discussed are some of the specific industrial areas which are turning to sputter deposition techniques.

  15. Enhancement of current injection in organic light emitting diodes with sputter treated molybdenum oxides as hole injection layers

    NASA Astrophysics Data System (ADS)

    Wang, Po-Sheng; Wu, I.-Wen; Tseng, Wei-Hsuan; Chen, Mei-Hsin; Wu, Chih-I.

    2011-04-01

    The enhancement of current density and luminance in organic light emitting diodes is achieved by treating molybdenum oxide (MoO3) hole-injection-layers with slight argon ion sputtering. The sputter treated MoO3 layers provide improvement in current injection efficiency, resulting in better current density which is about ten times higher than that of the reference devices. Photoemission spectroscopy shows that molybdenum in MoO3 is reduced to lower oxidation states after sputter treatment due to the removal of oxygen. As a result, gap states are formed to enhance metallic characteristics of the sputter treated MoO3 surface and facilitate better hole injection efficiency.

  16. Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer

    NASA Astrophysics Data System (ADS)

    Chiu, C. H.; Lin, Y. W.; Tsai, M. T.; Lin, B. C.; Li, Z. Y.; Tu, P. M.; Huang, S. C.; Hsu, Earl; Uen, W. Y.; Lee, W. I.; Kuo, H. C.

    2015-03-01

    In this work, the ultraviolet light-emitting diodes (UV-LEDs) at 380 nm were grown on patterned sapphire substrate (PSS) by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD). A sputtered AlN nucleation layer was utilized on the PSS to enhance the quality of the epitaxial layer. By using high-resolution X-ray diffraction, the full-width at half-maximum of the rocking curve shows that the UV-LEDs with sputtered AlN nucleation layer had better crystalline quality when compared to conventional GaN nucleation samples. From the scanning electron microscope (SEM) and transmission electron microscopy (TEM) images, it can be observed that the tip and sidewall portion of the pattern was smooth using the sputtered AlN nucleation layer. The threading dislocation densities (TDDs) are reduced from 6×107 cm-2 to 2.5×107 cm-2 at the interface between the u-GaN layers for conventional and AlN PSS devices, respectively. As a result, a much higher light output power was achieved. The light output power at an injection current of 20 mA was enhanced by 30%. Further photoluminescence (PL) measurement and numerical simulation confirm that this increase of output power can be attributed to the improvement of material quality and light extraction.

  17. Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering.

    PubMed

    Shon, Jeong Woo; Ohta, Jitsuo; Ueno, Kohei; Kobayashi, Atsushi; Fujioka, Hiroshi

    2014-01-01

    InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However, applications of InGaN LEDs are limited to small devices because their fabrication process involves expensive epitaxial growth of InGaN by metalorganic vapor phase epitaxy on single-crystal wafers. If we can utilize a low-cost epitaxial growth process, such as sputtering on large-area substrates, we can fabricate large-area InGaN light-emitting displays. Here, we report the growth of GaN (0001) and InGaN (0001) films on amorphous SiO2 by pulsed sputtering deposition. We found that using multilayer graphene buffer layers allows the growth of highly c-axis-oriented GaN films even on amorphous substrates. We fabricated red, green, and blue InGaN LEDs and confirmed their successful operation. This successful fabrication of full-color InGaN LEDs on amorphous substrates by sputtering indicates that the technique is quite promising for future large-area light-emitting displays on amorphous substrates. PMID:24954609

  18. Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering

    NASA Astrophysics Data System (ADS)

    Shon, Jeong Woo; Ohta, Jitsuo; Ueno, Kohei; Kobayashi, Atsushi; Fujioka, Hiroshi

    2014-06-01

    InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However, applications of InGaN LEDs are limited to small devices because their fabrication process involves expensive epitaxial growth of InGaN by metalorganic vapor phase epitaxy on single-crystal wafers. If we can utilize a low-cost epitaxial growth process, such as sputtering on large-area substrates, we can fabricate large-area InGaN light-emitting displays. Here, we report the growth of GaN (0001) and InGaN (0001) films on amorphous SiO2 by pulsed sputtering deposition. We found that using multilayer graphene buffer layers allows the growth of highly c-axis-oriented GaN films even on amorphous substrates. We fabricated red, green, and blue InGaN LEDs and confirmed their successful operation. This successful fabrication of full-color InGaN LEDs on amorphous substrates by sputtering indicates that the technique is quite promising for future large-area light-emitting displays on amorphous substrates.

  19. Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

    NASA Astrophysics Data System (ADS)

    Chen, Shuo-Wei; Li, Heng; Lu, Tien-Chang

    2016-04-01

    The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs) with ex-situ sputtered physical vapor deposition (PVD) aluminum nitride (AlN) nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.

  20. Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique

    NASA Astrophysics Data System (ADS)

    Nakamura, Eiji; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi; Oshima, Masaharu

    2014-02-01

    P-type doping of GaN by pulsed sputtering deposition (PSD) at a low growth temperature of 480 °C and dramatic reduction in the growth process temperature for InGaN-based light-emitting diodes (LEDs) were achieved. Mg-doped GaN layers grown on semi-insulating GaN at 480 °C exhibited clear p-type conductivity with a hole concentration and mobility of 3.0 × 1017 cm-3 and 3.1 cm2 V-1 s-1, respectively. GaN/In0.33Ga0.67N/GaN LEDs fabricated at 480 °C showed clear rectifying characteristics and a bright electroluminescence emission near 640 nm. These results indicate that this low temperature PSD growth technique is quite promising for the production of nitride-based light-emitting devices on large-area glass substrates.

  1. Characterization of energetic and thermalized sputtered atoms in pulsed plasma using time-resolved tunable diode-laser induced fluorescence

    SciTech Connect

    Desecures, M.; Poucques, L. de; Easwarakhanthan, T.; Bougdira, J.

    2014-11-03

    In this work, a time-resolved tunable diode-laser (DL) induced fluorescence (TR-TDLIF) method calibrated by absorption spectroscopy has been developed in order to determine atom and flux velocity distribution functions (AVDF and FVDF) of the energetic and the thermalized atoms in pulsed plasmas. The experimental set-up includes a low-frequency (∼3 Hz) and high spectral-resolution DL (∼0.005 pm), a fast rise-time pulse generator, and a high power impulse magnetron sputtering (HiPIMS) system. The induced TR-TDLIF signal is recorded every 0.5 μs with a digital oscilloscope of a second-long trace. The technique is illustrated with determining the AVDF and the FVDF of a metastable state of the sputtered neutral tungsten atoms in the HiPIMS post-discharge. Gaussian functions describing the population of the four W isotopes were used to fit the measured TR-TDLIF signal. These distribution functions provide insight into transition from the energetic to thermalized regimes from the discharge onset. This technique may be extended with appropriate DLs to probe any species with rapidly changing AVDF and FVDF in pulsed and strongly oscillating plasmas.

  2. Study on MoO{sub 3-x} films deposited by reactive sputtering for organic light-emitting diodes

    SciTech Connect

    Oka, Nobuto; Watanabe, Hiroki; Sato, Yasushi; Yamaguchi, Hiroshi; Ito, Norihiro; Tsuji, Hiroya; Shigesato, Yuzo

    2010-07-15

    The authors investigate the role of reduced molybdenum trioxide [MoO{sub 3-x} (x{<=}1)] films in organic light-emitting diodes, particularly from the viewpoint of the oxidation state of Mo. MoO{sub 3-x} films were deposited by reactive sputtering under a mixture of argon (Ar) and oxygen (O{sub 2}). The O{sub 2} gas-flow ratio (GFR) [O{sub 2}/(Ar+O{sub 2})] was adjusted between 10% and 100%. Mo with six, five, and four valence electrons was detected in MoO{sub 3-x} film deposited with an O{sub 2} GFR of 10% and 12.5%, whereas, under higher O{sub 2} GFRs, only six valence electrons for Mo in the MoO{sub 3-x} film were detected. N,N{sup '}-di(1-naphthyl)-N,N{sup '}-diphenylbenzidine ({alpha}-NPD) layer, hole-transport material, were deposited over the MoO{sub 3-x} layer by subsequent vacuum evaporation. At the {alpha}-NPD/MoO{sub 3-x} interface, it was found that {alpha}-NPD cations were generated and that MoO{sub 3-x} was reduced, which provided evidence of charge transfer across the interface by Raman spectroscopy and x-ray photoelectron spectroscopy.

  3. Blue electroluminescence from Sb-ZnO/Cd-ZnO/Ga-ZnO heterojunction diode fabricated by dual ion beam sputtering.

    PubMed

    Pandey, Sushil Kumar; Awasthi, Vishnu; Verma, Shruti; Mukherjee, Shaibal

    2014-12-15

    p-type Sb-doped ZnO/i-CdZnO/n-type Ga-doped ZnO was grown by dual ion beam sputtering deposition system. Current-voltage characteristics of the heterojunction showed a diode-like rectifying behavior with a turn-on voltage of ~5 V. The diode yielded blue electroluminescence emissions at around 446 nm in forward biased condition at room temperature. The emission intensity increased with the increase of the injection current. A red shifting of the emission peak position was observed with the increment of ambient temperature, indicating a change of band gap of the CdZnO active layer with temperature in low-temperature measurement. PMID:25607047

  4. The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications

    NASA Astrophysics Data System (ADS)

    Tombak, A.; Benhaliliba, M.; Ocak, Y. S.; Kiliçoglu, T.

    In the current paper, the physical properties and microelectronic parameters of direct current (DC) sputtered p-type CuO film and diode have been investigated. The film of CuO as oxide and p-type semiconductor is grown onto glass and n-Si substrates by reactive DC sputtering at 250 °C. After deposition, a post-annealing procedure is applied at various temperatures in ambient. Through this research, several parameters are determined such structural, optical and electrical magnitudes. The thickness of CuO thin films goes from 122 to 254 nm. A (1 1 1)-oriented cubic crystal structure is revealed by X-ray analysis. The grain size is roughly depending on the post-annealing temperature, it increases with temperature within the 144-285 nm range. The transmittance reaches 80% simultaneously in visible and infrared bands. The optical band gap is varied between 1.99 and 2.52 eV as a result of annealing temperature while the resistivity and the charge carrier mobility decrease with an increase in temperature from 135 to 14 Ω cm and 0.92 to 0.06 cm2/Vs, respectively. The surface of samples is homogenous, bright dots are visible when temperature reaches the highest value. As a diode, Ag/CuO/n-Si exhibits a non-ideal behavior and the ideality factor is about 3.5. By Norde method, the barrier height and the series resistance are extracted and found to be 0.96 V and 86.6 Ω respectively.

  5. Imaging of polycyclic aromatic hydrocarbons by means of sputtered neutrals mass spectrometry using a diode-pumped solid-state laser.

    PubMed

    Ohishi, Kenji; Sakamoto, Tetsuo; Saikawa, Jiro; Ishigaki, Naoya; Tojo, Koji; Ido, Yutaka; Hayashi, Shun-ichi; Ishiuchi, Shun-ichi; Misawa, Kentaro; Fujii, Masaaki

    2013-01-01

    Laser post-ionization of sputtered molecules by pulsed Ga focused ion-beam (Ga-FIB) bombardment was examined for the detection and imaging of polycyclic aromatic hydrocarbons (PAHs) on particles. As model samples, pyrene and pelyrene adsorbed on TiO2, blended regents of pyrene and n-heneicosan were used. The TiO2 particle size was selected to be several micro-meters. Laser light and Ga-FIB were synchronized with each other. The repetition rate synchronized with Ga-FIB was 1 kHz for pyrene analysis and 2 kHz for perylene, respectively. The laser wavelength was set to 266 nm. The wavelength was a generated fourth harmonic of a Nd:YAG DPSS (diode-pumped solid-state) micro-chip laser (UV microchip laser). By using a UV microchip laser, laser-SNMS (laser post-ionized sputtered neutral mass spectrometry) analysis and imaging were performed. The imaging of pyrene (m/z = 202, C16H10) and perylene (m/z = 252, C20H12) has been successful. Both the scanning ion microscopy image of TiO2 and the PAHs image in laser-SNMS analysis were well-fitted with each other. PMID:23474717

  6. Sputter target

    DOEpatents

    Gates, Willard G.; Hale, Gerald J.

    1980-01-01

    The disclosure relates to an improved sputter target for use in the deposition of hard coatings. An exemplary target is given wherein titanium diboride is brazed to a tantalum backing plate using a gold-palladium-nickel braze alloy.

  7. Theory and simulation of oscillations on near-steady state in crossed-field electron flow and the resulting transport

    NASA Astrophysics Data System (ADS)

    Cartwright, Keith Lewis

    The purpose of this study is to understand the oscillatory steady-state behavior of crossed-field electron flow in diodes for magnetic fields greater than the Hull field (B > BH) by the means of theory and self-consistent, electrostatic particle-in-cell (PIC) simulations. Many prior analytic studies of diode-like problems have been time-independent, which leaves the stability and time-dependence of these models unresolved. We investigate fluctuations through the system, including virtual cathode oscillations, and compare results for various cathode injection models. The dominant oscillations in magnetically insulated crossed-field diodes are found to be a series resonance, Z(ω s) = 0, between the pure electron plasma and vacuum impedance of the diode. The series resonance in crossed-field electron flow is shown to be the ky --> 0 (one-dimensional) limit of the diocotron/magnetron eigenmode equation. The wavenumber, ky, is perpendicular to the direction across the diode and magnetic field. The series resonance is derived theoretically and verified with self-consistent, electrostatic, PIC simulations. Electron transport across the magnetic field in a cutoff planar smooth-bore magnetron is described on the basis of surface waves (formed by the shear flow instability) perpendicular to the magnetic field and along the cathode. A self-consistent, 2d3v (two spatial dimensions and three velocity components), electrostatic PIC simulation of a crossed-field diode produces a near- Brillouin flow which slowly expands across the diode, punctuated by sudden transport across the diode. The theory of slow transport across the diode is explained by the addition of perturbed orbits to the Brillouin shear flow motion of the plasma in the diode. A slow drift compared to the shear flow is described which results from the fields caused by the surface wave inducing an electrostatic ponderomotive-like force in a dc external magnetic field. In order to perform the above

  8. Cathode driven high gain crossed-field amplifier

    NASA Astrophysics Data System (ADS)

    1983-07-01

    The objective of this three-phase program is to achieve the design of a cathode driven high gain re-entrant Crossed Field Amplifier capable of meeting the parameters of Raytheon Company specification No. 968838 dated 10 May 1978. The effort includes the fabrication and test of three developmental and four final configuration tubes. One final configuration tube will be life tested and two will be delivered to the Navy. The tasks discussed during this report period relate to the cold tests performed on various subassemblies of model no. 4 and on the sealed-in model no. 4 of the S-band high gain cathode driven crossed field amplifier. Based on the performance of model no. 3 certain remedial measures have been implemented in model no. 4 that have resulted in the elimination of key resonances within the tube and an improvement in the isolation between the cathode and anode circuits.

  9. Electromagnetic instabilities attributed to a cross-field ion drift

    NASA Technical Reports Server (NTRS)

    Chang, C. L.; Wong, H. K.; Wu, C. S.

    1990-01-01

    Instabilities due to a cross-field ion flow are reexamined by including the electromagnetic response of the ions, which has been ignored in existing discussions. It is found that this effect can lead to significant enhancement of the growth rate. Among the new results, a purely growing, electromagnetic unstable mode with a wave vector k parallel to the ambient magnetic field is found. The plasma configuration under consideration is similar to that used in the discussion of the well-known modified-two-stream instability. This instability has a growth rate faster than the ion cyclotron frequency, and is not susceptible to high-plasma-beta stabilization.

  10. Crossed-field divertor for a plasma device

    DOEpatents

    Kerst, Donald W.; Strait, Edward J.

    1981-01-01

    A divertor for removal of unwanted materials from the interior of a magnetic plasma confinement device includes the division of the wall of the device into segments insulated from each other in order to apply an electric field having a component perpendicular to the confining magnetic field. The resulting crossed-field drift causes electrically charged particles to be removed from the outer part of the confinement chamber to a pumping chamber. This method moves the particles quickly past the saddle point in the poloidal magnetic field where they would otherwise tend to stall, and provides external control over the rate of removal by controlling the magnitude of the electric field.

  11. Kr II and Xe II axial velocity distribution functions in a cross-field ion source

    SciTech Connect

    Lejeune, A.; Bourgeois, G.; Mazouffre, S.

    2012-07-15

    Laser induced fluorescence measurements were carried out in a cross-field ion source to examine the behaviour of the axial ion velocity distribution functions (VDFs) in the expanding plasma. In the present paper, we focus on the axial VDFs of Kr II and Xe II ions. We examine the contourplots in a 1D-phase space (x,v{sub x}) representation in front of the exhaust channel and along the centerline of the ion source. The main ion beam, whose momentum corresponds to the ions that are accelerated through the whole potential drop, is observed. A secondary structure reveals the ions coming from the opposite side of the channel. We show that the formation of the neutralized ion flow is governed by the annular geometry. The assumption of a collisionless shock or a double layer due to supersonic beam interaction is not necessary. A non-negligible fraction of slow ions originates in local ionization or charge-exchange collision events between ions of the expanding plasma and atoms of the background residual gas. Slow ions that are produced near the centerline in the vicinity of the exit plane are accelerated toward the source body with a negative velocity leading to a high sputtering of front face. On the contrary, the ions that are produced in the vicinity of the channel exit plane are partially accelerated by the extended electric field.

  12. Kr II and Xe II axial velocity distribution functions in a cross-field ion source

    NASA Astrophysics Data System (ADS)

    Lejeune, A.; Bourgeois, G.; Mazouffre, S.

    2012-07-01

    Laser induced fluorescence measurements were carried out in a cross-field ion source to examine the behaviour of the axial ion velocity distribution functions (VDFs) in the expanding plasma. In the present paper, we focus on the axial VDFs of Kr II and Xe II ions. We examine the contourplots in a 1D-phase space (x,vx) representation in front of the exhaust channel and along the centerline of the ion source. The main ion beam, whose momentum corresponds to the ions that are accelerated through the whole potential drop, is observed. A secondary structure reveals the ions coming from the opposite side of the channel. We show that the formation of the neutralized ion flow is governed by the annular geometry. The assumption of a collisionless shock or a double layer due to supersonic beam interaction is not necessary. A non-negligible fraction of slow ions originates in local ionization or charge-exchange collision events between ions of the expanding plasma and atoms of the background residual gas. Slow ions that are produced near the centerline in the vicinity of the exit plane are accelerated toward the source body with a negative velocity leading to a high sputtering of front face. On the contrary, the ions that are produced in the vicinity of the channel exit plane are partially accelerated by the extended electric field.

  13. Nonlinear analysis of generalized cross-field current instability

    NASA Technical Reports Server (NTRS)

    Yoon, Peter H.; Lui, Anthony T. Y.

    1993-01-01

    Analysis of the generalized cross-field current instability is carried out in which cross-field drift of both the ions and electrons and their temperatures are permitted to vary in time. The unstable mode under consideration is the electromagnetic generalization of the classical modified-two-stream instability. The generalized instability is made of the modified-two-stream and ion-Weibel modes. The relative importance of the features associated with the ion-Weibel mode and those of the modified-two-stream mode is assessed. Specific applications are made to the Earth's neutral sheet prior to substorm onset and to the Earth's bow shock. The numerical solution indicates that the ion-Weibel mode dominates in the Earth's neutral sheet environment. In contrast, the situation for the bow shock is dominated by the modified-two-stream mode. Notable differences are found between the present calculation and previous results on ion-Weibel mode which restrict the analysis to only parallel propagating waves. However, in the case of Earth's bow shock for which the ion-Weibel mode plays no important role, the inclusion of the electromagnetic ion response is found to differ little from the previous results which treats ions responding only to the electrostatic component of the excited waves.

  14. Sputtering and ion plating

    NASA Technical Reports Server (NTRS)

    1972-01-01

    The proceedings of a conference on sputtering and ion plating are presented. Subjects discussed are: (1) concepts and applications of ion plating, (2) sputtering for deposition of solid film lubricants, (3) commercial ion plating equipment, (4) industrial potential for ion plating and sputtering, and (5) fundamentals of RF and DC sputtering.

  15. Magnetron sputtering source

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

    1994-08-02

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

  16. Magnetron sputtering source

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  17. Lockhart Crossing field: new Wilcox trend in southeastern Louisiana

    SciTech Connect

    Self, G.A.; Breard, S.Q.; Rael, H.P.; Stein, J.A.; Thayer, P.A.; Traugott, M.O.; Eason, W.D.

    1986-05-01

    In 1982, a significant onshore oil discovery in the lower Eocene Wilcox was made at Lockhart Crossing field, illuminating a new oil trend in southeast Louisiana. Twenty-eight producers and nine dry holes were drilled, resulting in development of 3400 productive acres with estimated recoverable reserves of 21 million bbl of oil after secondary recovery. The main field reservoir is a 40 to 80-ft (12 to 24-m) marine sandstone. The dominant facies is an upward-coarsening sequence of very fine to fine-grained glauconitic sandstone deposited as a nearshore marine bar. The associated facies is a younger, upward-fining, channelized sequence of medium to very fine-grained sandstone. Faulting initiated channeling and erosion into the existing nearshore bar facies with subsequent deposition of channel fill. Together these two facies constitute one reservoir. The primary trapping mechanism is structural, in the form of a rollover anticline. This solution gas drive reservoir is normally pressured and displays a concave-downward producing water level that initially masked the true productive limits of the field. 14 figures, 3 tables.

  18. Solar coronal loop heating by cross-field wave transport

    NASA Technical Reports Server (NTRS)

    Amendt, Peter; Benford, Gregory

    1989-01-01

    Solar coronal arches heated by turbulent ion-cyclotron waves may suffer significant cross-field transport by these waves. Nonlinear processes fix the wave-propagation speed at about a tenth of the ion thermal velocity, which seems sufficient to spread heat from a central core into a large cool surrounding cocoon. Waves heat cocoon ions both through classical ion-electron collisions and by turbulent stochastic ion motions. Plausible cocoon sizes set by wave damping are in roughly kilometers, although the wave-emitting core may be only 100 m wide. Detailed study of nonlinear stabilization and energy-deposition rates predicts that nearby regions can heat to values intermediate between the roughly electron volt foot-point temperatures and the about 100 eV core, which is heated by anomalous Ohmic losses. A volume of 100 times the core volume may be affected. This qualitative result may solve a persistent problem with current-driven coronal heating; that it affects only small volumes and provides no way to produce the extended warm structures perceptible to existing instruments.

  19. A cross-field current instability for substorm expansions

    SciTech Connect

    Lui, A.T.Y. ); Chang, C.L.; Mankofsky, A. ); Wong, H.K. ); Winske, D. )

    1991-07-01

    The authors investigate a cross-field current instability (CFCI) as a candidate for current disruption during substorm expansions. The numerical solution of the linear dispersion equation indicates that (1) the proposed instability can occur at the inner edge or the midsection of the neutral sheet just prior to the substorm expansion onset although the former environment is found more favorable at the same drift speed scaled to the ion thermal speed, (2) the computed growth time is comparable to the substorm onset time, and (3) the excited waves have a mixed polarization with frequencies near the ion gyrofrequency at the inner edge and near the lower hybrid frequency in the midtail region. On the basis of this analysis, they propose a substorm development scenario in which plasma sheet thinning during the substorm growth phase leads to an enhancement in the relative drift between ions and electrons. This results in the neutral sheet being susceptible to the CHCI and initiates the diversion of the cross-tail current through the ionosphere. Whether or not a substorm current wedge is ultimately formed is regulated by the ionospheric condition. A large number of substorm features can be readily understood with the proposed scheme. These include (1) precursory activities (pseudobreakups) prior to substorm onset, (2) substorm initiation region to be spatially localized, (3) three different solar wind conditions for substorm occurence, (4) skew towards evening local times for substorm onset locations, (5) different acceleration characteristics between ions and electrons, (6) tailward spreading of current disruption region after substorm onset, and (7) local time expansion of substorm current wedge with possible discrete westward jump for the evening expansion.

  20. Solar system sputtering

    NASA Technical Reports Server (NTRS)

    Tombrello, T. A.

    1982-01-01

    The sites and materials involved in solar system sputtering of planetary surfaces are reviewed, together with existing models for the processes of sputtering. Attention is given to the interaction of the solar wind with planetary atmospheres in terms of the role played by the solar wind in affecting the He-4 budget in the Venus atmosphere, and the erosion and differentiation of the Mars atmosphere by solar wind sputtering. The study is extended to the production of isotopic fractionation and anomalies in interplanetary grains by irradiation, and to erosion effects on planetary satellites with frozen volatile surfaces, such as with Io, Europa, and Ganymede. Further measurements are recommended of the molecular form of the ejected material, the yields and energy spectra of the sputtered products, the iosotopic fractionation sputtering causes, and the possibility of electronic sputtering enhancement with materials such as silicates.

  1. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  2. Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

    NASA Astrophysics Data System (ADS)

    Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki

    2016-05-01

    Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4–1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

  3. Sputtering of uranium

    NASA Technical Reports Server (NTRS)

    Gregg, R.; Tombrello, T. A.

    1978-01-01

    Results are presented for an experimental study of the sputtering of U-235 atoms from foil targets by hydrogen, helium, and argon ions, which was performed by observing tracks produced in mica by fission fragments following thermal-neutron-induced fission. The technique used allowed measurements of uranium sputtering yields of less than 0.0001 atom/ion as well as yields involving the removal of less than 0.01 monolayer of the uranium target surface. The results reported include measurements of the sputtering yields for 40-120-keV protons, 40-120-keV He-4(+) ions, and 40- and 80-keV Ar-40(+) ions, the mass distribution of chunks emitted during sputtering by the protons and 80-keV Ar-40(+) ions, the total chunk yield during He-4(+) sputtering, and some limited data on molecular sputtering by H2(+) and H3(+). The angular distribution of the sputtered uranium is discussed, and the yields obtained are compared with the predictions of collision cascade theory.

  4. Data Diode

    SciTech Connect

    2014-11-07

    The Data Diode is a data security technology that can be deployed within an organization's defense-in-depth computer network strategy for information assurance. For internal security, the software creates an environment within the network where an organization's approved users can work freely inside an enclave of protected data, but file transfers out of the enclave is restricted. For external security, once a network intruder has penetrated the network, the intruder is able to "see" the protected data, but is unable to download the actual data. During the time it takes for the intruder to search for a way around the obstacle created by the Data Diode, the network's intrusion detection technologies can locate and thwart the malicious intent of the intruder. Development of the Data Diode technology was made possible by funding from the Intelligence Advanced Research Projects Activity (IARPA).

  5. Data Diode

    Energy Science and Technology Software Center (ESTSC)

    2014-11-07

    The Data Diode is a data security technology that can be deployed within an organization's defense-in-depth computer network strategy for information assurance. For internal security, the software creates an environment within the network where an organization's approved users can work freely inside an enclave of protected data, but file transfers out of the enclave is restricted. For external security, once a network intruder has penetrated the network, the intruder is able to "see" the protectedmore » data, but is unable to download the actual data. During the time it takes for the intruder to search for a way around the obstacle created by the Data Diode, the network's intrusion detection technologies can locate and thwart the malicious intent of the intruder. Development of the Data Diode technology was made possible by funding from the Intelligence Advanced Research Projects Activity (IARPA).« less

  6. PIC Simulation for ICF Plasma Sputter Coater

    NASA Astrophysics Data System (ADS)

    Wu, W.; Huang, H.; Parks, P. B.; Chan, V. S.; Walton, C. C.; Wilks, S. C.

    2010-11-01

    To satisfy mesh spacing constraint δ/λDebye<=1 particle In Cell (PIC) simulations at 25x reduced cathode currents levels are used to numerically model the distribution of currents, electrostatic potentials and particle kinetics in a Type II ``unbalanced'' cylindrically symmetric magnetron discharge used for Be sputter coating of ICF capsules. Simulation indicates a strong magnetic field confinement of the plasma in the closed field lines region adjacent to cathode, and accompanying cross-field line plasma diffusion into the open-field line region connected to wall/anode. A narrow Charles-Langmuir sheath and a pre-sheath that is ˜10x wider due to the existence of the B-field are observed. The effects of varying boundary conditions, e.g., the separation between the anode/cathode, the anode bias voltage, etc., are studied, which is expected to aid experimentalists in turning these ``knobs'' for better coating qualities. We also show that the etch rate due to sputtering of Be targets predicted by the results of our PIC simulations, after rescaling to experimental conditions, agrees with experiments.

  7. Magnetically attached sputter targets

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.

    1994-02-15

    An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material is described. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly. 11 figures.

  8. Magnetically attached sputter targets

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.

    1994-01-01

    An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly.

  9. Fundamental sputtering studies: Nonresonant ionization of sputtered neutrals

    SciTech Connect

    Burnett, J.W.; Pellin, M.J.; Calaway, W.F.; Gruen, D.M. ); Yates, J.T. Jr. . Dept. of Chemistry)

    1989-01-04

    Because of the practical importance of sputtering, numerous theories and computer simulations are used for predicting many aspects of the sputtering process. Unfortunately, many of the calculated sputtering results are untested by experiment. Until recently, most sputtering experiments required either very high ion fluences or the detection of only minor constituents of the sputtered flux, i.e., ions. These techniques may miss the subtleties involved in the sputtering process. High-detection-efficiency mass spectrometry, coupled with the laser ionization of neutral atoms, allows the detection of the major sputtered species with very low incident ion fluences. The depth-of-origin of sputtered atoms is one example of an important but poorly understood aspect of the sputtering process. By following the sputtering yield of a substrate atom with various coverages of an adsorbed overlayer, the depth of origin of sputtered atoms has been determined. Our results indicate that two-thirds of the sputtered flux originates in the topmost atomic layer. The ion-dose dependence of sputtering yields has long been assumed to be quite minor for low- to-moderate primary ion fluences. We have observed a two-fold decrease in the sputtering yield of the Ru(0001) surface for very low primary ion fluences. Data analysis results in a cross section for damage of 2.7 {plus minus} 1.0 {times} 10{sup {minus}15}cm{sup 2}. 40 refs., 3 figs., 2 tabs.

  10. Current-Free Plasma Thruster Controlling Cross-Field Diffusion under a Magnetic Nozzle

    NASA Astrophysics Data System (ADS)

    Takahashi, Kazunori; Charles, Christine; Boswell, Rod; Ando, Akira

    A current-free helicon plasma thruster is designed to control cross-field diffusion in a magnetic nozzle while maintaining a constant plasma injection into the nozzle for investigation of the cross-field diffusion effect on the thruster performance. When increasing the magnetic field strength, the cross-field diffusion is inhibited and the higher plasma density in the magnetic nozzle downstream of the thruster is observed. Directly measured thrust also increases with an increase in the field strength, as the Lorentz force arising from the radial magnetic field and the electron diamagnetic drift current is enhanced by the higher electron pressure within the magnetic nozzle. Further, the rf power is increased up to 2 kW and the maximum thrust of about 15 mN is obtained for 20 sccm argon propellant.

  11. Cross-field current instability for auroral bead formation in breakup arcs

    NASA Astrophysics Data System (ADS)

    Lui, A. T. Y.

    2016-06-01

    The physical process responsible for the onset of substorm expansion is still unresolved in spite of decades of research on the topic. Detailed properties of the spatially periodic auroral beads on prebreakup auroral arcs that initiate substorm expansion onset are now available. These auroral bead properties impose severe observational constraints on the onset process. In this work, theoretical predictions of the cross-field current instability are evaluated in terms of these constraints. The growth rates and wavelengths associated with auroral beads in several previously published events are reproduced by the cross-field current instability, implying that the instability can indeed account for the characteristics of auroral beads that eventually lead to substorm onset. The present results differ from the conclusion reached by a previous analysis that the shear flow ballooning instability can account for the growth and spatial scales of auroral beads better than the cross-field current instability.

  12. Contrasting characteristics of linear-field and cross-field atmospheric plasma jets

    NASA Astrophysics Data System (ADS)

    Walsh, J. L.; Kong, M. G.

    2008-09-01

    This letter reports an experimental study of two types of atmospheric pressure plasma jets in terms of their fundamental properties and their efficiency in etching polymeric materials. The first plasma jet has a cross-field configuration with its electric field perpendicular to its gas flow field, whereas the second is a linear-field device having parallel electric and flow fields. The linear-field jet is shown to drive electron transportation to the downstream application region, thus facilitating more active plasma chemistry there. This is responsible for its etching rate of polyamide films being 13-fold that of its cross-field counterpart.

  13. Influence of sputtering power on the optical properties of ITO thin films

    SciTech Connect

    K, Aijo John; M, Deepak T, Manju; Kumar, Vineetha V.

    2014-10-15

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  14. Influence of sputtering power on the optical properties of ITO thin films

    NASA Astrophysics Data System (ADS)

    K, Aijo John; Kumar, Vineetha V.; M, Deepak; T, Manju

    2014-10-01

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  15. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1998-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  16. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1998-06-16

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

  17. Contamination removal by ion sputtering

    NASA Astrophysics Data System (ADS)

    Shaw, Christopher G.

    1990-11-01

    Experimental investigations are described for ion-beam sputtering and RF-plasma sputtering to determine the effectiveness of the methods for removing contaminants from an optical surface. The effects of ion-beam sputtering are tested with an ion gun and measured by mounting a 5-MHz quartz-crystal microbalance on a sample holder and simulating spacecraft contamination. RF-plasma sputtering involves the application of an alternating electric field to opposing electrodes immersed in a low density gas, and is tested with the same setup. The energy dependence of the sputtering yields is measured to determine whether the different contaminants are removed and whether the mirror surface is affected. Ion-beam sputtering removes all contaminants tested, but also affects the mirror surface at high energies. When the correct DC bias is applied, RF sputtering can remove the contaminants without removing the metal-mirror surface.

  18. Electron Cross-field Transport in a Low Power Cylindrical Hall Thruster

    SciTech Connect

    A. Smirnov; Y. Raitses; N.J. Fisch

    2004-06-24

    Conventional annular Hall thrusters become inefficient when scaled to low power. Cylindrical Hall thrusters, which have lower surface-to-volume ratio, are therefore more promising for scaling down. They presently exhibit performance comparable with conventional annular Hall thrusters. Electron cross-field transport in a 2.6 cm miniaturized cylindrical Hall thruster (100 W power level) has been studied through the analysis of experimental data and Monte Carlo simulations of electron dynamics in the thruster channel. The numerical model takes into account elastic and inelastic electron collisions with atoms, electron-wall collisions, including secondary electron emission, and Bohm diffusion. We show that in order to explain the observed discharge current, the electron anomalous collision frequency {nu}{sub B} has to be on the order of the Bohm value, {nu}{sub B} {approx} {omega}{sub c}/16. The contribution of electron-wall collisions to cross-field transport is found to be insignificant.

  19. Effect of electron thermal anisotropy on the kinetic cross-field streaming instability

    NASA Technical Reports Server (NTRS)

    Tsai, S. T.; Tanaka, M.; Gaffey, J. D., Jr.; Wu, C. S.; Da Jornada, E. H.; Ziebell, L. F.

    1984-01-01

    The investigation of the kinetic cross-field streaming instability, motivated by the research of collisionless shock waves and previously studied by Wu et al. (1983), is discussed more fully. Since in the ramp region of a quasi-perpendicular shock electrons can be preferentially heated in the direction transverse to the ambient magnetic field, it is both desirable and necessary to include the effect of the thermal anisotropy on the instability associated with a shock. It is found that Te-perpendicular greater than Te-parallel can significantly enhance the peak growth rate of the cross-field streaming instability when the electron beta is sufficiently high. Furthermore, the present analysis also improves the analytical and numerical solutions previously obtained.

  20. Anomalous Cross-Field Current and Fluctuating Equilibrium of Magnetized Plasmas

    SciTech Connect

    Rypdal, K.; Garcia, O.E.; Paulsen, J.

    1997-09-01

    It is shown by simple physical arguments and fluid simulations that electrostatic flute-mode fluctuations can sustain a substantial cross-field current in addition to mass and energy transport. The simulations show that this current determines essential features of the fluctuating plasma equilibrium, and explain qualitatively the experimental equilibria and the coherent flute-mode structures observed in a simple magnetized torus. {copyright} {ital 1997} {ital The American Physical Society}

  1. Apparent Cross-field Superslow Propagation of Magnetohydrodynamic Waves in Solar Plasmas

    NASA Astrophysics Data System (ADS)

    Kaneko, T.; Goossens, M.; Soler, R.; Terradas, J.; Van Doorsselaere, T.; Yokoyama, T.; Wright, A. N.

    2015-10-01

    In this paper we show that the phase-mixing of continuum Alfvén waves and/or continuum slow waves in the magnetic structures of the solar atmosphere as, e.g., coronal arcades, can create the illusion of wave propagation across the magnetic field. This phenomenon could be erroneously interpreted as fast magnetosonic waves. The cross-field propagation due to the phase-mixing of continuum waves is apparent because there is no real propagation of energy across the magnetic surfaces. We investigate the continuous Alfvén and slow spectra in two-dimensional (2D) Cartesian equilibrium models with a purely poloidal magnetic field. We show that apparent superslow propagation across the magnetic surfaces in solar coronal structures is a consequence of the existence of continuum Alfvén waves and continuum slow waves that naturally live on those structures and phase-mix as time evolves. The apparent cross-field phase velocity is related to the spatial variation of the local Alfvén/slow frequency across the magnetic surfaces and is slower than the Alfvén/sound velocities for typical coronal conditions. Understanding the nature of the apparent cross-field propagation is important for the correct analysis of numerical simulations and the correct interpretation of observations.

  2. Recent horizontal drilling in Lockhart Crossing Field, Livingston Parish, Louisiana: Its impact on geological interpretation

    SciTech Connect

    Johnson, R.J. )

    1993-09-01

    Recent horizontal completions drilled to date by Callon Petroleum Company in the Lockhart Crossing field have optimized production in the lower Eocene First Wilcox sandstone, a 40-45-ft-thick, marine bar composed to very fine- to fine-grained glauconitic sand. The First Wilcox sandstone reservoir has produced a cumulative of 16 MMBO and 17 BCFG from a total of 40 wells on the Lockhart Crossing field since 1982. Well-site geology was a key factor in these successful horizontal completions because mud logs, electric logs, and cores were not taken for these well bores. Over 3000 ft of drilled cuttings, taken at 10-ft intervals, were examined to maintain the drilling well bore near the top of the First Wilcox sandstone, which has the highest degree of permeability and porosity. By drilling horizontally, we encountered First Wilcox sandstone structure that was not previously mapped using existing subsurface well control. Callon's International Paper Company (IPCO) No. 6 well, the first of three horizontal wells drilled in the Lockhart Crossing field, flowed at a rate of 527 BOPD and 400 MCFGD with a final tubing pressure of 650 lb from the First Wilcox Sandstone in March 1992. The IPCO No. 6 horizontal well, located upthrown to a down-to-the-south fault, has produced 147 MBO an should adequately drain this area of the reservoir.

  3. Measurement of NSLS distributed diode sputter ion pump characteristics

    SciTech Connect

    Foerster, C.L.

    1984-01-01

    For the DI pump to have acceptable pumping speed, the pump must be glow discharge conditioned after the 150/sup 0/C max vacuum bakeout. Other DI pump conditioning procedures have not been investigated. Glow discharge conditioning of the system using the DI pump anode significantly improves the pumping speed at low pressures and high pressure pumping speed is slightly improved. The NSLS DI pump speed is not linear with pressure even though the average current is. Pumping speed drops to less than 25% of the high pressure speed at pressures below 10/sup -9/ torr, depending on the pump condition. The pumping speed is sufficiently close to its calculated value at high pressure. These results agree with actual ring experience with the distributed pump. The DI pump is most efficient pumping distributed gas loads from beam operation rather than gas loads introduced at the ends of the pump. Most of the gas load is distributed adjacent to the pump during beam operation due synchrotron radiation included desorption. 11 references, 5 figures.

  4. Adherence of sputtered titanium carbides

    NASA Technical Reports Server (NTRS)

    Brainard, W. A.; Wheeler, D. R.

    1979-01-01

    Sputtered coatings of the refractory metal carbides are of great interest for applications where hard wear-resistant materials are desired. The usefulness of sputtered refractory carbides is often limited, in practice, by spalling or interfacial separation. In this work improvements in the adherence of refractory carbides on iron, nickel and titanium based alloys were obtained by using oxidation, reactive sputtering or sputtered interlayers to alter the coating-substrate interfacial region. X-ray photoelectron spectroscopy and argon ion etching were used to characterize the interfacial regions, and an attempt was made to correlate adherence as measured in wear tests with the chemical nature of the interface.

  5. Cross-field diffusion in Hall thrusters and other plasma thrusters

    NASA Astrophysics Data System (ADS)

    Boeuf, J. P.

    2012-10-01

    Understanding and quantifying electron transport perpendicular to the magnetic field is a challenge in many low temperature plasma applications. Hall effect thrusters (HETs) provide an excellent example of cross-field transport. The HET is a very successful concept that can be considered both as a gridless ion source and an electromagnetic thruster. In HETs, the electric field E accelerating the ions is a consequence of the Lorentz force due to an external magnetic field B acting on the ExB Hall electron current. An essential aspect of HETs is that the ExB drift is closed, i.e. is in the azimuthal direction of a cylindrical channel. In the first part of this presentation we will discuss the physics of cross-field electron transport in HETs, and the current understanding (or non-understanding) of the possible role of turbulence and wall collisions on cross-field diffusion. We will also briefly comment on alternative designs of ion sources based on the same principles as the conventional HET (Anode Layer Thruster, Diverging Cusp Field Thrusters, End-Hall ion sources). In a second part of the presentation we show that the Lorentz force acting on diamagnetic currents (associated with the ∇PexB term in the electron momentum equation) can also provide thrust. This is the case for example in helicon thrusters where the plasma expands in a magnetic nozzle. We will report and discuss recent work on helicon thrusters and other devices where the diamagnetic current is dominant (with some examples where the ∇PexB current is not closed and is directed toward a wall!).

  6. Cross-Field Electron Heat Transport in a Magnetoplasma, in the Presence of Ion Turbulence

    NASA Astrophysics Data System (ADS)

    Needelman, David Dore

    Cross-field heat transport through a cylindrical pulsed argon afterglow magnetoplasma, (B_0 = 48-300G, rm T_{e} ~ 0.5-7 eV, n_{e} ~ 10^{11} cm^{ -3}, Phi_{s } ~ 2V, radius = 5 cm), is investigated. The study of heat flow is relevant to the fields of fusion engineering and space physics. A BaO-coated dispenser cathode is used to produce a pulsed electron beam, (V_{b}=750 V, I_{b} = 1A, radius = 1.27 cm, tau_{b} = 5 - 10mus, fired 300 mus into the afterglow), propagating down the central axis of the plasma. The beam heats the background electrons within some centimeters of the beam launching point (Whe85); heat diffuses along field lines, forming a "flux tube" of hot plasma. Biased grids, (radius = 5 cm, V_{g} = -200V), are used to retard the axial heat flow through the tube. A radially inserted Langmuir probe is used to map T_{e}, n_ {e}, and Phi_{s } as a function of position and time. There profiles are used to deduce the electron cross-field thermal conductivity coefficient, kappa_| . Anomalous heat transport is found for all cases studied; kappa_| is found to be up to two orders of magnitude above classical predictions. Such transport is attributed to quasilinear effects; collisions of the background electrons with radial ion acoustic waves created indirectly by the beam, through action of the beam/plasma and oscillating two-stream instabilities (Whe85), and with azimuthal ion acoustic waves, created by the pressure-gradient instability(All74). An enhanced collision frequency leads to faster cross-field particle and heat diffusion. Measurements of wave amplitudes are presented, as are correlation measurements proving the waves are ion acoustic. Comparisons of experimental measurements with quasilinear theory predictions (Man78) are shown to be quite close.

  7. Influence of oblique magnetic field on electron cross-field transport in a Hall effect thruster

    SciTech Connect

    Miedzik, Jan; Daniłko, Dariusz; Barral, Serge

    2015-04-15

    The effects of the inclination of the magnetic field with respect to the channel walls in a Hall effect thruster are numerically studied with the use of a one-dimensional quasi-neutral Particle-In-Cell model with guiding center approximation of electron motion along magnetic lines. Parametric studies suggest that the incidence angle strongly influences electron transport across the magnetic field. In ion-focusing magnetic topologies, electrons collide predominantly on the side of the magnetic flux tube closer to the anode, thus increasing the electron cross-field drift. The opposite effect is observed in ion-defocussing topology.

  8. Influence of oblique magnetic field on electron cross-field transport in a Hall effect thruster

    NASA Astrophysics Data System (ADS)

    Miedzik, Jan; Barral, Serge; Daniłko, Dariusz

    2015-04-01

    The effects of the inclination of the magnetic field with respect to the channel walls in a Hall effect thruster are numerically studied with the use of a one-dimensional quasi-neutral Particle-In-Cell model with guiding center approximation of electron motion along magnetic lines. Parametric studies suggest that the incidence angle strongly influences electron transport across the magnetic field. In ion-focusing magnetic topologies, electrons collide predominantly on the side of the magnetic flux tube closer to the anode, thus increasing the electron cross-field drift. The opposite effect is observed in ion-defocussing topology.

  9. Evidence for enhanced cross-field transport mechanisms in the TCV Snowflake divertor

    NASA Astrophysics Data System (ADS)

    Vijvers, Wouter

    2015-11-01

    TCV experiments demonstrate that cross-field plasma transport is enhanced in the Snowflake divertor (SFD) compared to a standard single-null divertor (SND). This enhanced cross-field transport spreads the exhaust power over a larger surface area than can be achieved by magnetic geometry alone and, thereby, reduces the peak heat flux. Comparison of the experiments with modelling identifies steepened radial gradients, ExB drift effects, and βp-driven instabilities as the responsible transport mechanisms. The uncovered physics is also relevant to the SND and may help improve predictive models for the target profiles in ITER and DEMO. In SFD variants with an X-point in the scrape-off layer (SOL), part of the heat flux profile is split off and redirected to an additional target. The resulting steepened radial gradients enhance cross-field diffusion. This is confirmed by EMC3-Eirene simulations, which show a factor two reduction of the parallel heat flux, even if diffusivities remain constant. Theoretical analysis predicts enhanced ExB drifts in the SFD by increased poloidal gradients of the temperature and density. The predictions are confirmed by target heat and particle flux measurements in dedicated experiments with both toroidal field directions. Cross-field convection by curvature-driven modes at high βp (``churning modes'') explains the large fluxes into the private flux region of the SFD. This activates the extra targets and reduces the peak power to the primary targets up to a factor four. This mechanism is expected to be most effective when the divertor conditions are most severe: near the separatrix of a narrow, high-pressure SOL of a large tokamak. These and other alternative divertor configurations thus provide potential solutions to the power exhaust challenge, as well as laboratories to study SOL transport, one of the most important topics in tokamak research. This project was carried out with financial support from NWO. The work was carried out within

  10. Laser spectroscopy of sputtered atoms

    SciTech Connect

    Gruen, D.M.; Pellin, M.J.; Young, C.E.; Calaway, W.F.

    1985-01-01

    The use of laser radiation to study the sputtering process is of relatively recent origin. Much has been learned from this work about the basic physics of the sputtering process itself through measurements of velocity and excited state distributions of sputtered atoms and the effects of adsorbates on substrate sputtering yields. Furthermore, the identification, characterization, and sensitive detection of sputtered atoms by laser spectroscopy has led to the development of in situ diagnostics for impurity fluxes in the plasma edge regions of tokamaks and of ultrasensitive methods (ppB Fe in Si) for surface analysis with ultralow (picocoulomb) ion fluences. The techniques involved in this work, laser fluorescence and multiphoton resonance ionization spectroscopy, will be described and illustrations given of results achieved up to now. 55 refs., 5 figs., 1 tab.

  11. Diode and Diode Circuits, a Programmed Text.

    ERIC Educational Resources Information Center

    Balabanian, Norman; Kirwin, Gerald J.

    This programed text on diode and diode circuits was developed under contract with the United States Office of Education as Number 4 in a series of materials for use in an electrical engineering sequence. It is intended as a supplement to a regular text and other instructional material. (DH)

  12. Laser Diode Ignition (LDI)

    NASA Technical Reports Server (NTRS)

    Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

    1994-01-01

    This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

  13. Electron Cross-field Transport in a Miniaturized Cylindrical Hall Thruster

    SciTech Connect

    Smirnov Artem, Raitses Yevgeny, Fisch Nathaniel J

    2005-10-14

    Conventional annular Hall thrusters become inefficient when scaled to low power. Cylindrical Hall thrusters, which have lower surface-to-volume ratio, are more promising for scaling down. They presently exhibit performance comparable with conventional annular Hall thrusters. The present paper gives a review of the experimental and numerical investigations of electron crossfield transport in the 2.6 cm miniaturized cylindrical Hall thruster (100 W power level). We show that, in order to explain the discharge current observed for the typical operating conditions, the electron anomalous collision frequency {nu}{sub b} has to be on the order of the Bohm value, {nu}{sub B} {approx} {omega}{sub c}/16. The contribution of electron-wall collisions to cross-field transport is found to be insignificant. The optimal regimes of thruster operation at low background pressure (below 10{sup -5} Torr) in the vacuum tank appear to be different from those at higher pressure ({approx} 10{sup -4} Torr).

  14. Kelvin-Helmholtz vortex formation and particle transport in a cross-field plasma sheath

    SciTech Connect

    Theilhaber, K.; Birdsall, C.K.

    1989-02-13

    The time-dependent behavior of a magnetized, two-dimensional plasma-wall sheath has been studied through particle simulations, whcih have shown that the cross-field sheath develops into a turbulent boundary layer, driven by the Kelvin-Helmholtz instability. The sheath acquires an equilibrium thickness l/sub x/approx.5rho/sub i/, and maintains long-lived vortices, with amplitudes deltaphiapprox.-2T/sub i//e, which drift parallel to the wall at half the ion thermal velocity. A central simulation result is that for ..omega../sub ..pi../greater than or equal to2..omega../sub ci/, the anomalous particle transport in the sheath scales like Bohn diffusion.

  15. Thermal effects and space-charge limited transition in crossed-field devices

    SciTech Connect

    Marini, Samuel; Rizzato, Felipe B.; Pakter, Renato

    2014-08-15

    A fully kinetic model for the electron flow in a crossed field device is derived and used to determine the system stationary states. It is found that for low injection temperatures, there is a simultaneous presence of distinct stationary solutions and an abrupt transition between accelerating and space-charge limited regimes. On the other hand, for high injection temperatures, there is only a single stationary solution branch and the change between the regimes becomes continuous. For intermediate temperatures, it is then identified a critical point that separates the abrupt and continuous behaviors. It is also investigated how intrinsic space-charge oscillations may drive stationary states unstable in certain parameter regimes. The results are verified with N-particle self-consistent simulations.

  16. Computer model of crossed-field devices using moving wavelength codes

    SciTech Connect

    McDowell, H.L.

    1996-12-31

    DECFA and DEMAG are moving wavelength, particle in cell codes for modeling crossed-field amplifiers (CFAs) and magnetrons. The codes model the interaction between a single traveling wave on a smooth anode surface and the space charge in crossed electric and magnetic fields. The detailed anode vane tip geometry is not included in the model. Periodic boundary conditions are imposed on the sides of the moving interaction wavelength thereby imposing the wave periodicity on the solution. In spite of the assumptions involved, the codes successfully model the performance of many existing CFAs and magnetrons. Correlation of computer model and experimental results will be presented for typical devices. The only failures of the codes to correlate with device performance have occurred for small gap anode vane tip geometries which degrade the efficiency of electron collection. To avoid such possibilities, the simulation codes need to be supplemented with trajectory tracing studies of electrons between anode vanes. Results of such studies will be presented.

  17. Plasma heating at collisionless shocks due to the kinetic cross-field streaming instability

    NASA Technical Reports Server (NTRS)

    Winske, D.; Quest, K. B.; Tanaka, M.; Wu, C. S.

    1985-01-01

    Heating at collisionless shocks due to the kinetic cross-field streaming instability, which is the finite beta (ratio of plasma to magnetic pressure) extension of the modified two stream instability, is studied. Heating rates are derived from quasi-linear theory and compared with results from particle simulations to show that electron heating relative to ion heating and heating parallel to the magnetic field relative to perpendicular heating for both the electrons and ions increase with beta. The simulations suggest that electron dynamics determine the saturation level of the instability, which is manifested by the formation of a flattop electron distribution parallel to the magnetic field. As a result, both the saturation levels of the fluctuations and the heating rates decrease sharply with beta. Applications of these results to plasma heating in simulations of shocks and the earth's bow shock are described.

  18. Local and global effects of the cross-field current instability

    NASA Technical Reports Server (NTRS)

    Lui, A. T. Y.

    1996-01-01

    The cross-field current instability (CCI) was proposed elsewhere as a plausible mechanism for the initiation and intensification of substorm expansions. This instability encompasses the modified two stream, the ion-Weibel and the lower hybrid drift modes. The work carried out in relation to this instability and its local and global effects is reviewed. Predicted local effects include current reduction, particle acceleration, the excitation of oblique whistlers and lower hybrid drift waves, and the breakdown of the frozen-in-field condition through anomalous dissipation. The predicted global effects of CCI include the offset of force equilibrium and the generation of field aligned currents at the disruption site, which allow the efficient large scale transportation of mass, momentum and energy within the magnetosphere.

  19. Low-Energy Sputtering Research

    NASA Technical Reports Server (NTRS)

    Ray, P. K.; Shutthanandan, V.

    1999-01-01

    An experimental study is described to measure low-energy (less than 600 eV) sputtering yields of molybdenum with xenon ions using Rutherford backscattering spectroscopy (RBS) and secondary neutral mass spectroscopy (SNMS). An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 (micro)A/sq cm. For RBS measurements, the sputtered material was collected on a thin aluminum strip which was mounted on a semi-circular collector plate. The target was bombarded with 200 and 500 eV xenon ions at normal incidence. The differential sputtering yields were measured using the RBS method with 1 MeV helium ions. The differential yields were fitted with a cosine fitting function and integrated with respect to the solid angle to provide the total sputtering yields. The sputtering yields obtained using the RBS method are in reasonable agreement with those measured by other researchers using different techniques. For the SNMS measurements, 150 to 600 eV xenon ions were used at 50deg angle of incidence. The SNMS spectra were converted to sputtering yields for perpendicular incidence by normalizing SNMS spectral data at 500 eV with the yield measured by Rutherford backscattering spectrometry. Sputtering yields as well as the shape of the yield-energy curve obtained in this manner are in reasonable agreement with those measured by other researchers using different techniques. Sputtering yields calculated by using two semi-spherical formulations agree reasonably well with measured data. The isotopic composition of secondary ions were measured by bombarding copper with xenon ions at energies ranging from 100 eV to 1.5 keV. The secondary ion flux was found to be enriched in heavy isotopes at low incident ion energies. The heavy isotope enrichment was observed to decrease with increasing impact energy. Beyond 700 eV, light isotopes were sputtered preferentially with the enrichment remaining nearly constant.

  20. DEEPER BY THE DOZEN: UNDERSTANDING THE CROSS-FIELD TEMPERATURE DISTRIBUTIONS OF CORONAL LOOPS

    SciTech Connect

    Schmelz, J. T.; Pathak, S.; Jenkins, B. S.; Worley, B. T.

    2013-02-10

    Spectroscopic analysis of coronal loops has revealed a variety of cross-field temperature distributions. Some loops appear to be isothermal while others require multithermal plasma. The EUV Imaging Spectrometer on Hinode has the spatial resolution and temperature coverage required for differential emission measure (DEM) analysis of coronal loops. Our results also use data from the X-Ray Telescope on Hinode as a high-temperature constraint. Of our 12 loops, two were post-flare loops with broad temperature distributions, two were narrow but not quite isothermal, and the remaining eight were in the mid range. We consider our DEM methods to be a significant advance over previous work, and it is also reassuring to learn that our findings are consistent with results available in the literature. For the quiescent loops analyzed here, 10 MK plasma, a signature of nanoflares, appears to be absent at a level of approximately two orders of magnitude down from the DEM peak. We find some evidence that warmer loops require broader DEMs. The cross-field temperatures obtained here cannot be modeled as single flux tubes. Rather, the observed loop must be composed of several or many unresolved strands. The plasma contained in each of these strands could be cooling at different rates, contributing to the multithermal nature of the observed loop pixels. An important implication of our DEM results involves observations from future instruments. Once solar telescopes can truly resolve X-ray and EUV coronal structures, these images would have to reveal the loop substructure implied by our multithermal results.

  1. Effects of Anomalous Electron Cross-Field Transport in a Low Temperature Magnetized Plasma

    NASA Astrophysics Data System (ADS)

    Raitses, Yevgeny

    2014-10-01

    The application of the magnetic field in a low pressure plasma can cause a spatial separation of low and high energy electrons. This so-called magnetic filter effect is used for many plasma applications, including ion and neutral beam sources, plasma processing of semiconductors and nanomaterials, and plasma thrusters. In spite of successful practical applications, the magnetic filter effect is not well understood. In this work, we explore this effect by characterizing the electron and ion energy distribution functions in a plasma column with crossed electric and magnetic fields. Experimental results revealed a strong dependence of spatial variations of plasma properties on the gas pressure. For xenon and argon gases, below ~ 1 mtorr, the increase of the magnetic field leads to a more uniform profile of the electron temperature. This surprising result is due to anomalously high electron cross-field transport that causes mixing of hot and cold electrons. High-speed imaging and probe measurements revealed a coherent structure rotating in E cross B direction with frequency of a few kHz. Theory and simulations describing this rotating structure has been developed and points to ionization and electrostatic instabilities as their possible cause. Similar to spoke oscillations reported for Hall thrusters, this rotating structure conducts the large fraction of the cross-field current. The use of segmented electrodes with an electrical feedback control is shown to mitigate these oscillations. Finally, a new feature of the spoke phenomenon that has been discovered, namely a sensitive dependence of the rotating oscillations on the gas pressure, can be important for many applications. This work was supported by DOE Contract DE-AC02-09CH11466.

  2. Evidence of stochastic diffusion across a cross-field sheath due to Kelvin-Helmholtz vortices

    SciTech Connect

    Parker, S.E.; Xu, X.Q.; Lichtenberg, A.J.; Birdsall, C.K. )

    1992-03-15

    We identify mechanisms for particle transport across a cross-field sheath. We present a study of {bold E}{times}{bold B} drift motion in a vortex in which the ion drifts are perturbed by their finite gyroradii and electron drifts are perturbed by one or more traveling waves. Large-scale vortices, which are the result of nonlinear saturation of the Kelvin-Helmholtz instability resulting from shear in the {bold E}{times}{bold B} drift velocity, have been observed in plasma simulations of the cross-field sheath (K. Theilhaber and C. K. Birdsall, Phys. Rev. Lett. 62, 772 (1989); Phys. Fluids B 1, 2241 (1989); 1, 2260 (1989)). Small-scale turbulence is also present, and ions and electrons are transported across the sheath. A vortex alone does not allow for the observed electron transport because the electron drift orbits simply circulate. On the other hand, the ion motion can be stochastic from resonant interaction between harmonics of the drift motion and the gyromotion, independent of the background turbulence. The fluctuations in the ion density would then give rise to a small-amplitude wave spectrum. The combined action of the vortex fields and traveling-wave fields on the electron motion can then lead to stochastic electron diffusion. We study these effects, showing that the values of vortex fields observed in the simulation are sufficient to lead to both ion and electron stochasticity. Furthermore, the rate of the resulting diffusion is sufficient to account for the diffusion observed in the simulation.

  3. Laser diode protection circuit

    SciTech Connect

    Burgyan, L.; Hand, W.L.

    1990-05-08

    This patent describes a method for protecting a laser diode included within an electro-optical circuit. It comprises: the laser diode, a DC bias supply for supplying forward conduction current to the laser diode to cause it to emit light energy at a predetermined quiescent operating point, and an RF amplifier means for supplying an RF amplitude of an analog modulating signal to the laser diode for modulating the intensity of the emitted light energy about the quiescent operating point thereof, the method including providing a very high impedance to the laser diode during its nominal operating conditions about the quiescent point and, sensing an instantaneous amplitude of the RF amplitude modulating signal to detect amplitude surges therein, and responding to the sensing means by removing forward conduction current from the laser diode during the sense amplitude surges int he RF amplitude of the analog modulating signal, thereby causing the laser diode to reduce emission of light energy to a safe level.

  4. Sputtering. [as deposition technique in mechanical engineering

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  5. Polycrystalline Diamond Schottky Diodes and Their Applications.

    NASA Astrophysics Data System (ADS)

    Zhao, Ganming

    In this work, four-hot-filament CVD techniques for in situ boron doped diamond synthesis on silicon substrates were extensively studied. A novel tungsten filament shape and arrangement used to obtain large-area, uniform, boron doped polycrystalline diamond thin films. Both the experimental results and radiative heat transfer analysis showed that this technique improved the uniformity of the substrate temperature. XRD, Raman and SEM studies indicate that large area, uniform, high quality polycrystalline diamond films were obtained. Schottky diodes were fabricated by either sputter deposition of silver or thermal evaporation of aluminum or gold, on boron doped diamond thin films. High forward current density and a high forward-to-reverse current ratio were exhibited by silver on diamond Schottky diodes. Schottky barrier heights and the majority carrier concentrations of both aluminum and gold contacted diodes were determined from the C-V measurements. Furthermore, a novel theoretical C-V-f analysis of deep level boron doped diamond Schottky diodes was performed. The analytical results agree well with the experimental results. Compressive stress was found to have a large effect on the forward biased I-V characteristics of the diamond Schottky diodes, whereas the effect on the reverse biased characteristics was relatively small. The stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. This result shows that CVD diamond device has potential for mechanical transducer applications. The quantitative photoresponse characteristics of the diodes were studied in the spectral range of 300 -1050 nm. Semi-transparent gold contacts were used for better photoresponse. Quantum efficiency as high as 50% was obtained at 500 nm, when a reverse bias of over 1 volt was applied. The Schottky barrier heights between either gold or

  6. Simultaneous ion sputter polishing and deposition

    NASA Technical Reports Server (NTRS)

    Rutledge, S.; Banks, B.; Brdar, M.

    1981-01-01

    Results of experiments to study ion beam sputter polishing in conjunction with simultaneous deposition as a mean of polishing copper surfaces are presented. Two types of simultaneous ion sputter polishing and deposition were used in these experiments. The first type utilized sputter polishing simultaneous with vapor deposition, and the second type utilized sputter polishing simultaneous with sputter deposition. The etch and deposition rates of both techniques were studied, as well as the surface morphology and surface roughness.

  7. Sputter etching of hemispherical bearings

    NASA Technical Reports Server (NTRS)

    Schiesser, R. J.

    1972-01-01

    Technique was developed for fabricating three dimensional pumping grooves on gas bearings by sputter etching. Method eliminates problems such as groove nonuniformity, profile, and finish, which are associated with normal grooving methods.

  8. Bypass diode integration

    NASA Technical Reports Server (NTRS)

    Shepard, N. F., Jr.

    1981-01-01

    Protective bypass diodes and mounting configurations which are applicable for use with photovoltaic modules having power dissipation requirements in the 5 to 50 watt range were investigated. Using PN silicon and Schottky diode characterization data on packaged diodes and diode chips, typical diodes were selected as representative for each range of current carrying capacity, an appropriate heat dissipating mounting concept along with its environmental enclosure was defined, and a thermal analysis relating junction temperature as a function of power dissipation was performed. In addition, the heat dissipating mounting device dimensions were varied to determine the effect on junction temperature. The results of the analysis are presented as a set of curves indicating junction temperature as a function of power dissipation for each diode package.

  9. Simulation of Large Parallel Plasma Flows in the Tokamak SOL Driven by Cross-Field Transport Asymmetries

    SciTech Connect

    Pigarov, A Y; Krasheninnikov, S I; LaBombard, B; Rognlien, T D

    2006-06-06

    Large-Mach-number parallel plasma flows in the single-null SOL of different tokamaks are simulated with multi-fluid transport code UEDGE. The key role of poloidal asymmetry of cross-field plasma transport as the driving mechanism for such flows is discussed. The impact of ballooning-like diffusive and convective transport and plasma flows on divertor detachment, material migration, impurity flows, and erosion/deposition profiles is studied. The results on well-balanced double null plasma modeling that are indicative of strong asymmetry of cross-field transport are presented.

  10. Improved refractory coatings. [sputtered coatings on substrates that form stable nitrides

    NASA Technical Reports Server (NTRS)

    Brainard, W. A. (Inventor)

    1980-01-01

    The adhesion, friction and wear properties of sputtered refractory coatings on substrates of materials that form stable nitrides are enhanced by placing each substrate directly below a titanium carbide target of a commercial radiofrequency diode apparatus in a vacuum chamber. Nitrogen is bled into the system through a nozzle resulting in a small partial pressure of about 0.5% to 2.5% during the first two minutes of deposition. The flow of nitrogen is then stopped, and the sputtering ambient is reduced to pure argon through a nozzle without interrupting the sputtering process. When nitrogen is deliberately introduced during the crucial interface formation, some of the titanium at the interface reacts to form titanium nitride while the metal of the substrate also forms the nitride. These two nitrides atomically mixed together in the interfacial region act to more strongly bond the growing titanium carbide coating as it forms on the substrate.

  11. Coaxial foilless diode

    SciTech Connect

    Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng

    2014-05-15

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  12. Effect of Secondary Electron Emission on Electron Cross-Field Current in E×B Discharges

    SciTech Connect

    Yevgeny Raitses, Igor D. Kaganovich, Alexander Khrabrov, Dmytro Sydorenko, Nathaniel J. Fisch and Andrei Smolyakov

    2011-02-10

    This paper reviews and discusses recent experimental, theoretical, and numerical studies of plasma-wall interaction in a weakly collisional magnetized plasma bounded with channel walls made from different materials. A lowpressure ExB plasma discharge of the Hall thruster was used to characterize the electron current across the magnetic field and its dependence on the applied voltage and electron-induced secondary electron emission (SEE) from the channel wall. The presence of a depleted, anisotropic electron energy distribution function with beams of secondary electrons was predicted to explain the enhancement of the electron cross-field current observed in experiments. Without the SEE, the electron crossfield transport can be reduced from anomalously high to nearly classical collisional level. The suppression of SEE was achieved using an engineered carbon velvet material for the channel walls. Both theoretically and experimentally, it is shown that the electron emission from the walls can limit the maximum achievable electric field in the magnetized plasma. With nonemitting walls, the maximum electric field in the thruster can approach a fundamental limit for a quasineutral plasma.

  13. Cross-field electron transport induced by a rotating spoke in a cylindrical Hall thruster

    SciTech Connect

    Ellison, C. L.; Raitses, Y.; Fisch, N. J.

    2012-01-15

    Rotating spoke phenomena have been observed in a variety of Hall thruster and other E x B devices. It has been suggested that the spoke may be associated with the enhancement of the electron cross-field transport. In this paper, the current conducted across the magnetic field via a rotating spoke has been directly measured for the first time in the E x B discharge of a cylindrical Hall thruster. The spoke current was measured using a segmented anode. Synchronized measurements with a high speed camera and a four-segment anode allow observation of the current as a function of time and azimuthal position. Upwards of 50% of the total current is conducted through the spoke, which occupies a quarter of the Hall thruster channel area. To determine the transport mechanism, emissive and Langmuir probes were installed to measure fluctuating plasma potential, electron density, and temperature. A perturbed, azimuthal electric field and density are observed to oscillate in-phase with the rotating spoke. The resulting drift current is found to enhance electron transport with a magnitude equal to the spoke current to within margins of error.

  14. Internal feedback and its effect on phase linearity in a forward wave crossed-field amplifier

    SciTech Connect

    Chernin, D.

    1995-12-31

    Two sources of internal feedback couple the input and output of crossed-field amplifiers (CFA`s). Direct rf feedback occurs because the ends of the slow wave circuit radiate energy into the drift space connecting the output and input; the magnitude of this type of feedback may be measured at cold test. Electronic feedback, on the other hand, occurs only when the tube is operating, and is much harder to measure. It is due to the residual coherency retained by the beam after its passage through the drift space. As the input signal frequency of the amplifier is varied, the difference in electrical path length around the tube leads to a periodic variation of the total feedback signal relative to that of the input signal, resulting in a variation in phase of the effective drive signal, which in turn produces a periodic variation in phase of the output signal. This variation can have significant consequences for the system in which the CFA is used. The magnitude of this variation is very difficult to estimate other than by the use of a simulation code. The authors have applied their CFA simulation code, MASK, to this problem and have produced very good agreement with measurements of output phase versus frequency for a high power, forward wave S-band tube.

  15. A high power cross-field amplifier at X-Band

    SciTech Connect

    Eppley, K.; Feinstein, J.; Ko, K.; Kroll, N.; Lee, T.; Nelson, E.

    1991-05-01

    A high power cross-field amplifier is under development at SLAC with the objective of providing sufficient peak power to feed a section of an X-Band (11.424 GHz) accelerator without the need for pulse compression. The CFA being designed employs a conventional distributed secondary emission cathode but a novel anode structure which consists of an array of vane resonators alternatively coupled to a rectangular waveguide. The waveguide impedance (width) is tapered linearly from input to output so as to provide a constant RF voltage at the vane tips, leading to uniform power generation along the structure. Nominal design for this tube calls for 300 MW output power, 20 dB gain, DC voltage 142 KV, magnetic field 5 KG, anode-cathode gap 3.6 mm and total interaction length of about 60 cm. These specifications have been supported by computer simulations of both the RF slow wave structure as well as the electron space charge wave interaction. We have used ARGUS to model the cold circuit properties and CONDOR to model the electronic power conversion. An efficiency of 60 percent can be expected. We will discuss the details of the design effort. 5 refs., 6 figs.

  16. Cross-Field Current Instabilities in Thin Ionization Layers and the Enhanced Aurora

    SciTech Connect

    Jay R. Johnson and Hideo Okuda

    2008-05-20

    Nearly half of the time, auroral displays exhibit thin, bright layers known as \\enhanced aurora." There is a substantial body of evidence that connects these displays with thin, dense, heavy ion layers in the E-region. Based on the spectral characteristics of the enhanced layers, it is believed that they result when wave-particle interaction heats ambient electrons to energies at or just above the 17 eV ionization energy of N2. While there are several possible instabilities that could produce suprathermal electrons in thin layers, there has been no clear theoretical investigation which examines in detail how wave instabilities in the thin ionization layers could develop and produce the suprathermal electrons. We examine instabilities which would occur in thin, dense, heavy ion layers using extensive analytical analysis combined with particle simulations. We analyze a cross field current instability that is found to be strongly unstable in the heavy ion layers. Electrostatic simulations show that substantial heating of the ambient electrons occurs with energization at or above the N2 ionization energy.

  17. ATMOSPHERIC IMAGING ASSEMBLY OBSERVATIONS OF CORONAL LOOPS: CROSS-FIELD TEMPERATURE DISTRIBUTIONS

    SciTech Connect

    Schmelz, J. T.; Jenkins, B. S.; Pathak, S.

    2013-06-10

    We construct revised response functions for the Atmospheric Imaging Assembly (AIA) using the new atomic data, ionization equilibria, and coronal abundances available in CHIANTI 7.1. We then use these response functions in multithermal analysis of coronal loops, which allows us to determine a specific cross-field temperature distribution without ad hoc assumptions. Our method uses data from the six coronal filters and the Monte Carlo solutions available from our differential emission measure (DEM) analysis. The resulting temperature distributions are not consistent with isothermal plasma. Therefore, the observed loops cannot be modeled as single flux tubes and must be composed of a collection of magnetic strands. This result is now supported by observations from the High-resolution Coronal Imager, which show fine-scale braiding of coronal strands that are reconnecting and releasing energy. Multithermal analysis is one of the major scientific goals of AIA, and these results represent an important step toward the successful achievement of that goal. As AIA DEM analysis becomes more straightforward, the solar community will be able to take full advantage of the state-of-the-art spatial, temporal, and temperature resolution of the instrument.

  18. Vortex diode jet

    DOEpatents

    Houck, Edward D.

    1994-01-01

    A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

  19. Diodes stabilize LED output

    NASA Technical Reports Server (NTRS)

    Deters, R. A.

    1977-01-01

    Small-signal diodes are placed in series with light-emitting diodes (LED's) to stabilize LED output against temperature fluctuations. Simple inexpensive method compensates for thermal fluctuations over a broad temperature range. Requiring few components, technique is particularly useful where circuit-board space is limited.

  20. Masking Technique for Ion-Beam Sputter Etching

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1986-01-01

    Improved process for fabrication of integrated circuits developed. Technique utilizes simultaneous ion-beam sputter etching and carbon sputter deposition in conjunction with carbon sputter mask or organic mask decomposed to produce carbon-rich sputter-mask surface. Sputter etching process replenishes sputter mask with carbon to prevent premature mask loss.

  1. Pulsed high-voltage dc RF sputtering

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J. S., Jr.; Shaltens, R. K.

    1969-01-01

    Sputtering technique uses pulsed high voltage direct current to the object to be plated and a radio frequency sputtered film source. Resultant film has excellent adhesion, and objects can be plated uniformly on all sides.

  2. Sputtered silicon nitride coatings for wear protection

    NASA Technical Reports Server (NTRS)

    Grill, A.; Aron, P. R.

    1982-01-01

    Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition.

  3. Ion beam sputtering of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

  4. Mass dependence of nitride sputtering

    NASA Astrophysics Data System (ADS)

    Elovikov, S. S.; Khrustachev, I. K.; Mosunov, A. S.; Yurasova, V. E.

    2003-08-01

    A molecular dynamics simulation was performed to study the sputtering yield Y for BN, AlN and GaN polycrystals of wurtzite structure as a function of the masses m 1 of bombarding ions with energies from 200 to 2000 eV. A nonmonotonic behavior of the Y ( m 1 ) curve was obtained for the irradiation by low-energy ions, the curve having a maximum with a position being dependent on m 2 / m 1 ( m 2 is the average mass of atoms in a compound). For AlN and GaN the maximum was observed at m 2 / m 1 = 2, and for BN at m 2 / m 1 = 1. The effect of the mass of bombarding ions on the mean energies and energy spectra of sputtered particles, the depth of sputtering origin, and the generation of emitted atoms for nitrides was also investigated and discussed.

  5. Faraday screen sputtering on TPX

    SciTech Connect

    Ehst, D.A.

    1994-12-01

    The TPX design stipulates that the ion-cyclotron resonance frequency (ICRF) antenna must have a Faraday screen (FS). The author considers here possible low Z coatings for the screen, as well as sputtering behavior of the Ni and Ti substrates. The theory of rf-induced sputtering has been developed, and he follows those theoretical approaches. The author`s emphasis will be on both impurity generation as a possible source of increased Z{sub eff}, and also on actual erosion-lifetime of the materials under worst case conditions.

  6. Transport of sputtered neutral particles

    SciTech Connect

    Parker, G.J.; Hitchon, W.N.G.; Koch, D.J. ||

    1995-04-01

    The initial deposition rate of sputtered material along the walls of a trench is calculated numerically. The numerical scheme is a nonstatistical description of long-mean-free-path transport in the gas phase. Gas-phase collisions are included by using a ``transition matrix`` to describe the particle motion, which in the present work is from the source through a cylindrical chamber and into a rectangular trench. The method is much faster and somewhat more accurate than Monte Carlo methods. Initial deposition rates of sputtered material along the walls of the trench are presented for various physical and geometrical situations, and the deposition rates are compared to other computational and experimental results.

  7. Fabrication of thick structures by sputtering

    NASA Technical Reports Server (NTRS)

    Kazaroff, J. M.; Mcclanahan, E. D.; Busch, R.; Moss, R. W.

    1974-01-01

    Deposit, 5500-gram of Cu-0.15 wt % Zr alloy, sputtered onto copper cylinder to average thickness of 12.29 mm. Structure was achieved with high-rate sputter deposition for about 100 hours total sputtering time. Material had twice the strength of unsputtered material at temperatures to 723 K and equivalent strength at nearly 873 K.

  8. Modeling target erosion during reactive sputtering

    NASA Astrophysics Data System (ADS)

    Strijckmans, K.; Depla, D.

    2015-03-01

    The influence of the reactive sputter conditions on the racetrack and the sputter profile for an Al/O2 DC reactive sputter system is studied by modeling. The role of redeposition, i.e. the deposition of sputtered material back on the target, is therefore taken into account. The used model RSD2013 is capable of simulating the effect of redeposition on the target condition in a spatial resolved way. Comparison between including and excluding redeposition in the RSD2013 model shows that the in-depth oxidation profile of the target differs. Modeling shows that it is important to distinguish between the formed racetrack, i.e. the erosion depth profile, and the sputter profile. The latter defines the distribution of the sputtered atoms in the vacuum chamber. As the target condition defines the sputter yield, it does determine the racetrack and the sputter profile of the planar circular target. Both the shape of the racetrack and the sputter profile change as function of the redeposition fraction as well as function of the oxygen flow change. Clear asymmetries and narrowing are observed for the racetrack shape. Similar effects are noticed for the sputter profile but to a different extent. Based on this study, the often heard misconception that the racetrack shape defines the distribution of the sputtered atoms during reactive sputtering is proven to be wrong.

  9. Room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes and high-frequency diode rectifiers

    NASA Astrophysics Data System (ADS)

    Chen, Wei-Chung; Hsu, Po-Ching; Chien, Chih-Wei; Chang, Kuei-Ming; Hsu, Chao-Jui; Chang, Ching-Hsiang; Lee, Wei-Kai; Chou, Wen-Fang; Hsieh, Hsing-Hung; Wu, Chung-Chih

    2014-09-01

    In this work, we report successful implementation of room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes on polyethylene naphthalate (PEN) plastic substrates using the sputtering technique. Using n-type InGaZnO and p-type Cu2O films deposited by sputtering at room temperature, flexible n-InGaZnO/p-Cu2O heterojunction diodes were successfully fabricated on PEN plastic substrates. The didoes on PEN substrates exhibited a low apparent turn-on voltage of 0.44 V, a high rectification ratio of up to 3.4 × 104 at ±1.2 V, a high forward current of 1 A cm-2 around 1 V and a decent ideality factor of 1.4, similar to the characteristics of n-InGaZnO/p-Cu2O diodes fabricated on glass substrates. The characterization of the frequency response of the room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diode rectifiers indicated that they are capable of high-frequency operation up to 27 MHz, sufficient for high-frequency (13.56 MHz) applications. Preliminary bending tests on diode characteristics and rectifier frequency responses indicate their promise for applications in flexible electronics.

  10. Magnetron-Sputtered Amorphous Metallic Coatings

    NASA Technical Reports Server (NTRS)

    Thakoor, A. P.; Mehra, M.; Khanna, S. K.

    1985-01-01

    Amorphous coatings of refractory metal/metalloid-based alloys deposited by magnetron sputtering provide extraordinary hardness and wear resistance. Sputtering target fabricated by thoroughly mixing powders of tungsten, rhenium, and boron in stated proportions and pressing at 1,200 degrees C and 3,000 lb/in. to second power (21 MPa). Substrate lightly etched by sputtering before deposition, then maintained at bias of - 500 V during initial stages of film growth while target material sputtered onto it. Argon gas at pressure used as carrier gas for sputter deposition. Coatings dense, pinhole-free, extremely smooth, and significantly resistant to chemical corrosion in acidic and neutral aqueous environments.

  11. Sputtering technology in solid film lubrication

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1978-01-01

    Current and potential sputtering technology is reviewed as it applies primarily to the deposition of MoS2, though such lubricants as WS2 and PTFE are also considered. It is shown by electron microscopy and surface sensitive analytical techniques that the lubricating properties of sputtered MoS2 films are directly influenced by the sputtering parameters selected (i.e., power density, pressure, sputter etching, dc-biasing, etc.), substrate temperature, chemistry, topography, and environmental conditions during the friction test. Electron micrographs and diffractograms of sputtered MoS2 films clearly show the resultant changes in film morphology which affect film adherence and frictional properties.

  12. Redeposition of the sputtered surface in limiters

    SciTech Connect

    Brooks, J.N.; McGrath, R.T.

    1981-01-01

    Erosion of the surface coating of a pumped limiter by sputtering may be a critical life-limiting issue for future tokamak reactors. Redeposition of the sputtered material, however, may extend the coating life significantly. This subject has now been studied through the use of a code which models the redeposition of sputtered material which gets ionized in the scrape-off layer. The code also treats the transfer of wall-sputtered material to the limiter. The code uses models of the plasma density and temperature in the scrape-off zone, sheath potential, sputtering coefficients, spatial distribution of the sputtered atoms, and electron impact ionization coefficient for the sputtered atoms. The studies were made for high flux and low flux edge conditions corresponding to FED and STARFIRE limiters and assumed plasma-edge parameters. The results indicate that substantial redeposition from the scrape-off layer ionized neutrals occurs in the cases considered.

  13. Sputtering technology in solid film lubrication

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1978-01-01

    Potential and present sputtering technology is discussed as it applies to the deposition of solid film lubricants particularly MoS2, WS2, and PTFE. Since the sputtered films are very thin, the selection of the sputtering parameters and substrate condition is very critical as reflected by the lubricating properties. It was shown with sputtered MoS2 films that the lubricating characteristics are directly affected by the selected sputtering parameters (power density, pressure, sputter etching, dc-biasing, etc.) and the substrate temperature, chemistry, topography and the environmental conditions during the friction tests. Electron microscopy and other surface sensitive analytical techniques illustrate the resulting changes in sputtered MoS2 film morphology and chemistry which directly influence the film adherence and frictional properties.

  14. Propulsion of nanowire diodes.

    PubMed

    Calvo-Marzal, Percy; Sattayasamitsathit, Sirilak; Balasubramanian, Shankar; Windmiller, Joshua R; Dao, Cuong; Wang, Joseph

    2010-03-14

    The propulsion of semiconductor diode nanowires under external AC electric field is described. Such fuel-free electric field-induced nanowire propulsion offers considerable promise for diverse technological applications. PMID:20177595

  15. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    SciTech Connect

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  16. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    NASA Astrophysics Data System (ADS)

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-03-01

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as -2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to -15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  17. Inelastic tunnel diodes

    NASA Technical Reports Server (NTRS)

    Anderson, L. M. (Inventor)

    1984-01-01

    Power is extracted from plasmons, photons, or other guided electromagnetic waves at infrared to midultraviolet frequencies by inelastic tunneling in metal-insulator-semiconductor-metal diodes. Inelastic tunneling produces power by absorbing plasmons to pump electrons to higher potential. Specifically, an electron from a semiconductor layer absorbs a plasmon and simultaneously tunnels across an insulator into metal layer which is at higher potential. The diode voltage determines the fraction of energy extracted from the plasmons; any excess is lost to heat.

  18. Vortex diode jet

    SciTech Connect

    Houck, E.D.

    1994-05-17

    A fluid transfer system is described that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other. 10 figures.

  19. Light-emitting Diodes

    PubMed Central

    Opel, Daniel R.; Hagstrom, Erika; Pace, Aaron K.; Sisto, Krisanne; Hirano-Ali, Stefanie A.; Desai, Shraddha

    2015-01-01

    Background: In the early 1990s, the biological significance of light-emitting diodes was realized. Since this discovery, various light sources have been investigated for their cutaneous effects. Study design: A Medline search was performed on light-emitting diode lights and their therapeutic effects between 1996 and 2010. Additionally, an open-label, investigator-blinded study was performed using a yellow light-emitting diode device to treat acne, rosacea, photoaging, alopecia areata, and androgenetic alopecia. Results: The authors identified several case-based reports, small case series, and a few randomized controlled trials evaluating the use of four different wavelengths of light-emitting diodes. These devices were classified as red, blue, yellow, or infrared, and covered a wide range of clinical applications. The 21 patients the authors treated had mixed results regarding patient satisfaction and pre- and post-treatment evaluation of improvement in clinical appearance. Conclusion: Review of the literature revealed that differing wavelengths of light-emitting diode devices have many beneficial effects, including wound healing, acne treatment, sunburn prevention, phototherapy for facial rhytides, and skin rejuvenation. The authors’ clinical experience with a specific yellow light-emitting diode device was mixed, depending on the condition being treated, and was likely influenced by the device parameters. PMID:26155326

  20. Transport of sputtered particles in capacitive sputter sources

    NASA Astrophysics Data System (ADS)

    Trieschmann, Jan; Mussenbrock, Thomas

    2015-07-01

    The transport of sputtered aluminum inside a multi frequency capacitively coupled plasma chamber is simulated by means of a kinetic test multi-particle approach. A novel consistent set of scattering parameters obtained for a modified variable hard sphere collision model is presented for both argon and aluminum. An angular dependent Thompson energy distribution is fitted to results from Monte Carlo simulations and used for the kinetic simulation of the transport of sputtered aluminum. For the proposed configuration, the transport of sputtered particles is characterized under typical process conditions at a gas pressure of p = 0.5 Pa. It is found that—due to the peculiar geometric conditions—the transport can be understood in a one dimensional picture, governed by the interaction of the imposed and backscattered particle fluxes. It is shown that the precise geometric features play an important role only in proximity to the electrode edges, where the effect of backscattering from the outside chamber volume becomes the governing mechanism.

  1. Fabrication of boron sputter targets

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.

    1995-02-28

    A process is disclosed for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B{sub 4}C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil. 7 figs.

  2. Fabrication of boron sputter targets

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.

    1995-01-01

    A process for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B.sub.4 C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil.

  3. Energy spectrum of sputtered uranium

    NASA Technical Reports Server (NTRS)

    Weller, R. A.; Tombrello, T. A.

    1977-01-01

    The fission track technique for detecting uranium 235 was used in conjunction with a mechanical time-of-flight spectrometer to measure the energy spectrum in the region 1 eV to 1 keV of material sputtered from a 93% enriched U-235 foil by 80 keV Ar-40(+) ions. The spectrum was found to exhibit a peak in the region 2-4 eV and to decrease approximately as E to the -1.77 power for E is approximately greater than 100 eV. The design, construction and resolution of the mechanical spectrometer are discussed and comparisons are made between the data and the predictions of the ramdom collision cascade model of sputtering.

  4. In-situ sputtering apparatus

    SciTech Connect

    Erickson, Mark R.; Poole, Henry J.; Custer, III, Arthur W.; Hershcovitch, Ady

    2015-06-09

    A sputtering apparatus that includes at least a target presented as an inner surface of a confinement structure, the inner surface of the confinement structure is preferably an internal wall of a circular tube. A cathode is disposed adjacent the internal wall of the circular tube. The cathode preferably provides a hollow core, within which a magnetron is disposed. Preferably, an actuator is attached to the magnetron, wherein a position of the magnetron within the hollow core is altered upon activation of the actuator. Additionally, a carriage supporting the cathode and communicating with the target is preferably provided, and a cable bundle interacting with the cathode and linked to a cable bundle take up mechanism provided power and coolant to the cathode, magnetron, actuator and an anode of the sputtering apparatus.

  5. Sputtering Holes with Ion Beamlets

    NASA Technical Reports Server (NTRS)

    Byers, D. C.; Banks, B. A.

    1974-01-01

    Ion beamlets of predetermined configurations are formed by shaped apertures in the screen grid of an ion thruster having a double grid accelerator system. A plate is placed downstream from the screen grid holes and attached to the accelerator grid. When the ion thruster is operated holes having the configuration of the beamlets formed by the screen grid are sputtered through the plate at the accelerator grid.

  6. Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers

    NASA Astrophysics Data System (ADS)

    Chen, Shuo-Wei; Yang, Young; Wen, Wei-Chih; Li, Heng; Lu, Tien-Chang

    2016-03-01

    Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).

  7. Collision-spike Sputtering of Au Nanoparticles.

    PubMed

    Sandoval, Luis; Urbassek, Herbert M

    2015-12-01

    Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation. For the particular case of 200-keV Xe bombardment of Au particles, we show that collision spikes lead to abundant sputtering with an average yield of 397 ± 121 atoms compared to only 116 ± 48 atoms for a bulk Au target. Only around 31 % of the impact energy remains in the nanoparticles after impact; the remainder is transported away by the transmitted projectile and the ejecta. The sputter yield of supported nanoparticles is estimated to be around 80 % of that of free nanoparticles due to the suppression of forward sputtering. PMID:26245857

  8. Collision-spike sputtering of Au nanoparticles

    SciTech Connect

    Sandoval, Luis; Urbassek, Herbert M.

    2015-08-06

    Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation. For this specific case of 200-keV Xe bombardment of Au particles, we show that collision spikes lead to abundant sputtering with an average yield of 397 ± 121 atoms compared to only 116 ± 48 atoms for a bulk Au target. Only around 31% of the impact energy remains in the nanoparticles after impact; the remainder is transported away by the transmitted projectile and the ejecta. The sputter yield of supported nanoparticles is estimated to be around 80% of that of free nanoparticles due to the suppression of forward sputtering.

  9. Collision-spike sputtering of Au nanoparticles

    DOE PAGESBeta

    Sandoval, Luis; Urbassek, Herbert M.

    2015-08-06

    Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation. For this specific case of 200-keV Xe bombardment of Au particles, we show that collision spikes lead to abundant sputtering with an average yield of 397 ± 121 atoms compared to only 116 ± 48 atoms for a bulk Au target. Only around 31% of the impact energy remains in the nanoparticles after impact; the remaindermore » is transported away by the transmitted projectile and the ejecta. The sputter yield of supported nanoparticles is estimated to be around 80% of that of free nanoparticles due to the suppression of forward sputtering.« less

  10. Sputtering and ion plating for aerospace applications

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1981-01-01

    Sputtering and ion plating technologies are reviewed in terms of their potential and present uses in the aerospace industry. Sputtering offers great universality and flexibility in depositing any material or in the synthesis of new ones. The sputter deposition process has two areas of interest: thin film and fabrication technology. Thin film sputtering technology is primarily used for aerospace mechanical components to reduce friction, wear, erosion, corrosion, high temperature oxidation, diffusion and fatigue, and also to sputter-construct temperature and strain sensors for aircraft engines. Sputter fabrication is used in intricate aircraft component manufacturing. Ion plating applications are discussed in terms of the high energy evaporant flux and the high throwing power. Excellent adherence and 3 dimensional coverage are the primary attributes of this technology.

  11. Laser-induced fluorescence monitoring of the gas phase in a glow discharge during reactive sputtering of vanadium

    NASA Astrophysics Data System (ADS)

    Khvostikov, V. A.; Grazhulene, S. S.; Burmii, Zh. P.; Marchenko, V. A.

    2011-11-01

    Processes in the gas phase of a glow discharge during diode and magnetron reactive sputtering of vanadium in an Ar-O2 atmosphere have been investigated by laser-induced fluorescence (LIF) as a function of the parameters of the glow discharge and the composition of the atmosphere. The intensity of the fluorescence spectra increased by 1.5-2.0 orders of magnitude in the magnetron sputtering process compared with that of diode sputtering. Under continuous sputtering conditions, the dependences of the intensities and relative compositions of the fluorescence spectra on the discharge parameters (discharge voltage and current) have been investigated. In pulsed mode of the glow discharge, the dynamics of changes in the spectra have been studied versus variations in the discharge duration and the lag time for recording the fluorescence signal. The dependence of the spectral line intensities on the partial pressure of oxygen has been found for vanadium and its oxide. The cathode surface at pressures of 0.03-0.04 Pa was shown to convert to the oxidized state.

  12. Photovoltaic module bypass diode encapsulation

    NASA Technical Reports Server (NTRS)

    Shepard, N. J., Jr.

    1983-01-01

    The design and processing techniques necessary to incorporate bypass diodes within the module encapsulant are presented. The Semicon PN junction diode cells were selected. Diode junction to heat spreader thermal resistance measurements, performed on a variety of mounted diode chip types and sizes, have yielded values which are consistently below 1 deg C per watt, but show some instability when thermally cycled over the temperature range from -40 to 150 deg C. Three representative experimental modules, each incorporating integral bypass diode/heat spreader assemblies of various sizes, were designed. Thermal testing of these modules enabled the formulation of a recommended heat spreader plate sizing relationship. The production cost of three encapsulated bypass diode/heat spreader assemblies were compared with similarly rated externally mounted packaged diodes. It is concluded that, when proper designed and installed, these bypass diode devices will improve the overall reliability of a terrestrial array over a 20 year design lifetime.

  13. THE HYDROMAGNETIC INTERIOR OF A SOLAR QUIESCENT PROMINENCE. II. MAGNETIC DISCONTINUITIES AND CROSS-FIELD MASS TRANSPORT

    SciTech Connect

    Low, B. C.; Casini, R.; Liu, W.; Berger, T.

    2012-09-20

    This second paper of the series investigates the transverse response of a magnetic field to the independent relaxation of its flux tubes of fluid seeking hydrostatic and energy balance, under the frozen-in condition and suppression of cross-field thermal conduction. The temperature, density, and pressure naturally develop discontinuities across the magnetic flux surfaces separating the tubes, requiring the finite pressure jumps to be compensated by magnetic-pressure jumps in cross-field force balance. The tangentially discontinuous fields are due to discrete currents in these surfaces, {delta}-function singularities in the current density that are fully admissible under the rigorous frozen-in condition but must dissipate resistively if the electrical conductivity is high but finite. The magnetic field and fluid must thus endlessly evolve by this spontaneous formation and resistive dissipation of discrete currents taking place intermittently in spacetime, even in a low-{beta} environment. This is a multi-dimensional effect in which the field plays a central role suppressed in the one-dimensional (1D) slab model of the first paper. The study begins with an order-of-magnitude demonstration that of the weak resistive and cross-field thermal diffusivities in the corona, the latter is significantly weaker for small {beta}. This case for spontaneous discrete currents, as an important example of the general theory of Parker, is illustrated with an analysis of singularity formation in three families of two-dimensional generalizations of the 1D slab model. The physical picture emerging completes the hypothesis formulated in Paper I that this intermittent process is the origin of the dynamic interiors of a class of quiescent prominences revealed by recent Hinode/SOT and SDO/AIA high-resolution observations.

  14. Sputtering of silicon membranes with nanoscale thickness

    NASA Astrophysics Data System (ADS)

    Hobler, Gerhard; Nietiadi, Maureen L.; Bradley, R. Mark; Urbassek, Herbert M.

    2016-06-01

    A theoretical study of forward and backward sputtering produced by the impact of single 20 keV Ar ions on freestanding amorphous Si membranes is carried out. We use three techniques: Monte Carlo (MC) and molecular dynamics (MD) simulations, as well as analytical theory based on the Sigmund model of sputtering. We find that the analytical model provides a fair description of the simulation results if the film thickness d exceeds about 10%-30% of the mean depth of energy deposition a. In this regime, backward sputtering is nearly independent of the membrane thickness and forward sputtering shows a maximum for thicknesses d ≈a . The dependence of forward sputtering on the ion's incidence angle shows a qualitative change as a function of d: while for d ≲ a , the forward sputter yield has a maximum at oblique incidence angles, the maximum occurs at normal incidence for d ≳ a . As the membrane thickness is reduced below 0.1- 0.3 a , the theory's predictions increasingly deviate from the MC results. For example, the predicted forward sputter yield approaches a finite value but the MC result tends to zero. This behavior is interpreted in terms of energy deposition and sputtering efficiency. Near-perfect agreement is observed between the sputter yields calculated by MD and MC simulations even for the thinnest membranes studied (d = 5 Å).

  15. Modified Sigmund sputtering theory: isotopic puzzle

    NASA Astrophysics Data System (ADS)

    Zhang, Z. L.; Zhang, L.

    2005-05-01

    The theory of anisotropic sputtering proposed by Zhang [Z.L. Zhang, Phys. Rev. B 71 026101 (2005).] and [Z.L. Zhang and L. Zhang, Radiat. Eff. Defects Solids 159(5) 301 (2004).] has been generalized to sputtering of isotopic mixtures. The present theory (modified Sigmund theory) has been shown to fit numerous simulations and experimental measurements, including energy and angular distribution of sputtered atoms. In particular, the theory has successfully solved the isotope puzzle of sputtering induced by low energy and heavy ion bombardment.

  16. On the sputtering of binary compounds

    NASA Technical Reports Server (NTRS)

    Haff, P. K.; Switkowski, Z. E.

    1975-01-01

    A simple physical model is presented to describe some aspects of the sputtering of compound targets. In particular, expressions are developed for the partial sputtering yields for binary systems in terms of the elemental sputtering rates, the stoichiometric concentrations and surface binding energy. The partial yields depend non-linearly on the bulk target concentrations. Comparison of the theoretical predictions with the data on sputtering of PtSi, NiSi and Cu3Au indicates that the general features are well described.

  17. Sputtering Threshold Energies of Heavy Ions

    NASA Technical Reports Server (NTRS)

    Mantenieks, Maris A.

    1999-01-01

    Sputter erosion in ion thrusters has been measured in lifetests at discharge voltages as low as 25 V. Thruster operation at this discharge voltage results in component erosion rates sufficiently low to satisfy most mission requirements. It has been recognized that most of the internal sputtering in ion thrusters is done by doubly charged ions. Knowledge of the sputtering threshold voltage of a xenon molybdenum system would be beneficial in understanding the sputtering process as well as making more accurate calculations of the sputtering rates of ion thruster components. Sputtering threshold energies calculated from various formulations found in the literature results in values ranging from 28 to 200 eV. It is evident that some of these formulations cannot be relied upon to provide sputtering thresholds with any degree of accuracy. This paper re-examines the threshold energies measurements made in the early sixties by Askerov and Sena, and Stuart and Wehner. The threshold voltages as derived by Askerov and au have been reevaluated by using a different extrapolation method of sputter yields at low ion energies. The resulting threshold energies are in general similar to those measured by Stuart and Wehner. An empirical relationship is derived,for mercury and xenon ions for the ratio of the sputtering threshold energy to the sublimation energy as a function of the ratio of target to ion atomic mass.

  18. Pyrolyzed carbon film diodes.

    PubMed

    Morton, Kirstin C; Tokuhisa, Hideo; Baker, Lane A

    2013-11-13

    We have previously reported pyrolyzed parylene C (PPC) as a conductive carbon electrode material for use with micropipets, atomic force microscopy probes, and planar electrodes. Advantages of carbon electrode fabrication from PPC include conformal coating of high-aspect ratio micro/nanoscale features and the benefits afforded by chemical vapor deposition of carbon polymers. In this work, we demonstrate chemical surface doping of PPC through the use of previously reported methods. Chemically treated PPC films are characterized by multiple spectroscopic and electronic measurements. Pyrolyzed parylene C and doped PPC are used to construct diodes that are examined as both p-n heterojunction and Schottky barrier diodes. Half-wave rectification is achieved with PPC diodes and demonstrates the applicability of PPC as a conductive and semiconductive material in device fabrication. PMID:24090451

  19. Coaxial diode and vircator

    NASA Astrophysics Data System (ADS)

    Liu, Guozhi; Qiu, Shi; Wang, Hongjun; Huang, Wenhua; Wang, Feng

    1997-10-01

    The experimental and theoretical results of coaxial diode and the theoretical results of coaxial vircator are presented in this paper. The cathode is a cold, field- emitting graphite ring and needle-shaped copper applied to a grounded cylinder. The anode is a semi-transparent cylinder located inside of, and concentric to the cathode cylinder. The anode cylinder is pulsed positive. The coaxial vircator generates microwave by injecting a radial electron beam into cylinder such that the space-charge limited current is exceeded. A virtual cathode forms and oscillates in radial position and amplitude, generating microwaves which are extracted by an attached waveguide with a circular cross- section. Analytic and PIC simulations were used to study coaxial diode and vircator, with aid of the two dimensional PIC code, KARAT. The comparisons between the theoretical and the experimental results for a coaxial diode are presented.

  20. Blanket integrated blocking diodes

    NASA Astrophysics Data System (ADS)

    Uebele, P.; Kasper, C.; Rasch, K.-D.

    1986-11-01

    Two types of large area protection diodes for integration in solar arrays were developed in planar technology. For application in a bus voltage concept of V sub bus = 80 V a p-doped blanket integrated blocking diode (p-IBD) was developed with V sub rev = 120 V, whereas for the high voltage concept of V sub bus = 160 V a n-IBD with V sub rev = 250 V was developed. Application as blanket integrated shunt diodes is recommended. The optimized rearside diffusion provides a low forward voltage drop in the temperature range of minus 100 to plus 150 C. As a consequence of planar technology metallized coverglasses have to be used to minimize the photocurrent.

  1. Cryogenic thermal diodes

    NASA Astrophysics Data System (ADS)

    Paulsen, Brandon R.; Batty, J. C.; Agren, John

    2000-01-01

    Space based cryogenic thermal management systems for advanced infrared sensor platforms are a critical failure mode to the spacecraft missions they are supporting. Recent advances in cryocooler technologies have increased the achievable cooling capacities and decreased the operating temperatures of these systems, but there is still a fundamental need for redundancy in these systems. Cryogenic thermal diodes act as thermal switches, allowing heat to flow through them when in a conduction mode and restricting the flow of heat when in an isolation mode. These diodes will allow multiple cryocoolers to cool a single infrared focal plane array. The Space Dynamics Laboratory has undertaken an internal research and development effort to develop this innovative technology. This paper briefly describes the design parameters of several prototype thermal diodes that were developed and tested. .

  2. Resputtering of zinc oxide films prepared by radical assisted sputtering

    SciTech Connect

    Song Qiuming; Jiang Yousong; Song Yizhou

    2009-02-15

    Sputtering losses of zinc oxide films prepared by radical assisted sputtering were studied. It was found that the sputtering loss can be very severe in oxygenous sputtering processes of zinc oxide films. In general, resputtering caused by negative oxygen ions dominates the sputtering loss, while diffuse deposition plays a minor role. Resputtering is strongly correlated with the sputtering threshold energy of the deposited films and the concentration of O{sup -} in the sputtering zone. The balance between the oxygen concentration in the sputtering zone and the oxidation degree of the growing films depends on the sputtering rate. Our research suggests that a lower oxygen concentration in the sputtering zone and a higher oxidation degree of the growing films are favorable for reducing the resputtering losses. The sputtering loss mechanisms discussed in this work are also helpful for understanding the deposition processes of other magnetron sputtering systems.

  3. Heat pipes - Thermal diodes

    NASA Astrophysics Data System (ADS)

    Aptekar, B. F.; Baum, J. M.; Ivanovskii, M. N.; Kolgotin, F. F.; Serbin, V. I.

    The performance concept and peculiarities of the new type of thermal diode with the trap and with the wick breakage are dealt with in the report. The experimental data were obtained and analysed for the working fluid mass and the volume of the liquid in the wick on the forward-mode limiting heat transfer. The flow rate pulsation of the working fluid in the wick was observed visually on the setup with the transparent wall. The quantitative difference on the data on the investigated thermal diode and on the identical heat pipes without the wick breakage is found experimentally concerning the forward-mode limiting heat transfer.

  4. High performance all-sputter deposited Cu2S/CdS junctions

    NASA Astrophysics Data System (ADS)

    Thornton, J. A.; Anderson, W. W.

    1982-04-01

    Thin-film Cu2S/CdS solar cells are fabricated in a multisource chamber using magnetron reactive sputtering to deposit the Cu2S and CdS layers. An analysis of junction current voltage, log short-circuit current vs open-circuit voltage, and capacitance versus voltage measurements suggests that the junctions have very good quality, with diode ideality factors near unity and interface recombination velocities of about 2 x 10 to the 5th cm/s. The cells show that Cu2S/CdS junctions equivalent to those formed using the topotaxial ion exchange method can be formed by sequential all-vacuum deposition of CdS and Cu2S and that magnetron sputtering does not cause damage that compromises their electrical performance.

  5. Sputtered amorphous silicon solar cells. Quarterly report No. 2, October 22, 1980-January 22, 1981

    SciTech Connect

    Moustakas, T.D.; Morel, D.L.; Wronski, C.R.

    1981-01-01

    The mechanism of hydrogen incorporation during the film growth was investigated through hydrogen content studies. The data are consistent with a kinetic model of hydrogen incorporation. The hole mobility-lifetime products were measured on a-SiH/sub x//metal Schottky barrier structures with a new method utilizing optical absorption, collection efficiency, and capacitance voltage measurements. The diode properties of reactively sputtered hydrogenated amorphous silicon Schottky barrier structures (a-SiH/sub x//Pt) were investigated as a function of hydrogen content. The data are interpreted in terms of hydrogen modification of the valence band edge and interfacial oxide effects. The fabrication by the method of sputtering of P-I-N/ITO solar cell structures is reported. (MHR)

  6. Dual function conducting polymer diodes

    DOEpatents

    Heeger, Alan J.; Yu, Gang

    1996-01-01

    Dual function diodes based on conjugated organic polymer active layers are disclosed. When positively biased the diodes function as light emitters. When negatively biased they are highly efficient photodiodes. Methods of preparation and use of these diodes in displays and input/output devices are also disclosed.

  7. Development of sputtered techniques for thrust chambers. [coolant passage closing by triode sputtering

    NASA Technical Reports Server (NTRS)

    Mullaly, J. R.; Hecht, R. J.; Broch, J. W.; Allard, P. A.

    1976-01-01

    Procedures for closing out coolant passages in regeneratively cooled thrust chambers by triode sputtering, using post and hollow Cu-0.15 percent Zr cathodes are described. The effects of aluminum composite filler materials, substrate preparation, sputter cleaning, substrate bias current density and system geometry on closeout layer bond strength and structure are evaluated. High strength closeout layers were sputtered over aluminum fillers. The tensile strength and microstructure of continuously sputtered Cu-0.15 percent Zr deposits were determined. These continuous sputtered deposits were as thick as 0.75 cm. Tensile strengths were consistently twice as great as the strength of the material in wrought form.

  8. Kelvin--Helmholtz vortex formation and particle transport in a cross-field plasma sheath. I. Transient behavior

    SciTech Connect

    Theilhaber, K.; Birdsall, C.K. )

    1989-11-01

    The time-dependent behavior of a transversely magnetized, two-dimensional plasma--wall sheath has been studied through particle simulations, with the aim of modeling plasma behavior in the vicinity of the limiters and walls of magnetized plasma devices. The model assumes a magnetic field perfectly parallel to the confining surfaces. The simulations have shown that the cross-field sheath between a wall and a plasma is a self-sustaining turbulent boundary layer, with strong potential fluctuations and anomalous particle transport. The driving mechanism for this turbulence is the Kelvin--Helmholtz instability, which arises from the sheared particle drifts created near the wall. In this paper, the transient behavior leading to the turbulent steady state is presented, and the processes of linear growth, vortex saturation, and vortex coalescence are examined. An analytic model for the boundary Kelvin--Helmholtz instability is derived and shown to correctly predict the growth rates of the long-wavelength modes. In a companion paper, the steady-state structure and behavior of the cross-field sheath will be discussed in detail.

  9. Kelvin--Helmholtz vortex formation and particle transport in a cross-field plasma sheath. II. Steady state

    SciTech Connect

    Theilhaber, K.; Birdsall, C.K. )

    1989-11-01

    The steady-state behavior of the magnetized plasma--wall sheath has been studied through two-dimensional particle simulations, which have shown that the sheath maintains itself in a strongly nonlinear, turbulent equilibrium, continuously driven by the edge Kelvin--Helmholtz instability. The sheath assumes a thickness of order {ital l}{sub {ital x}}{similar to}5{rho}{sub {ital i}}, and maintains large, long-lived vortices, with amplitudes {delta}{phi}{similar to}2.5{ital T}{sub {ital i}}/{ital e}, which drift parallel to the wall at half the ion thermal velocity. The sheath also maintains a large, spatially averaged potential drop from the wall to the plasma with {Delta}{phi}{approx}{minus}2{ital T}{sub {ital i}}/{ital e}, opposite in sign to that of the unmagnetized sheath. Accompanying the long-wavelength vortices are shorter-wavelength fluctuations, which induce an anomalous cross-field transport, scaling in accordance to Bohm diffusion when {omega}{sub {ital pi}}{ge}2{omega}{sub {ital ci}}. At lower densities, {omega}{sub {ital pi}}{lt}2{omega}{sub {ital ci}}, the diffusion coefficient has an additional factor, proportional to the density. These results permit the modeling of the cross-field sheath by a simple effective boundary condition.

  10. Cross-field diffusion of energetic (100 keV to 2 MeV) protons in interplanetary space

    SciTech Connect

    Costa Jr, Edio da; Tsurutani, Bruce T.; Alves, Maria Virgínia; Echer, Ezequiel; Lakhina, Gurbax S. E-mail: costajr.e@gmail.com

    2013-12-01

    Magnetic field magnitude decreases (MDs) are observed in several regions of the interplanetary medium. In this paper, we characterize MDs observed by the Ulysses spacecraft instrumentation over the solar south pole by using magnetic field data to obtain the empirical size, magnetic field MD, and frequency of occurrence distribution functions. The interaction of energetic (100 keV to 2 MeV) protons with these MDs is investigated. Charged particle and MD interactions can be described by a geometrical model allowing the calculation of the guiding center shift after each interaction. Using the distribution functions for the MD characteristics, Monte Carlo simulations are used to obtain the cross-field diffusion coefficients as a function of particle kinetic energy. It is found that the protons under consideration cross-field diffuse at a rate of up to ≈11% of the Bohm rate. The same method used in this paper can be applied to other space regions where MDs are observed, once their local features are well known.

  11. Dust Growth by RF Sputtering

    SciTech Connect

    Churton, B.; Samarian, A. A.; Coueedel, L.

    2008-09-07

    The effect of the dust particle growth by RF sputtering on glow discharge has been investigated. It has been found that the growth of dust particles modifies the electrical characteristics of the discharge. In particularly, the absolute value of the self-bias voltage decreases during the particle growth due to the electron losses on the dust particles. To find the correlation between the dust growth and the self bias evolution, dust particles have been collected at different times. The dust particle growth rate is found to be linear.

  12. A photon thermal diode.

    PubMed

    Chen, Zhen; Wong, Carlaton; Lubner, Sean; Yee, Shannon; Miller, John; Jang, Wanyoung; Hardin, Corey; Fong, Anthony; Garay, Javier E; Dames, Chris

    2014-01-01

    A thermal diode is a two-terminal nonlinear device that rectifies energy carriers (for example, photons, phonons and electrons) in the thermal domain, the heat transfer analogue to the familiar electrical diode. Effective thermal rectifiers could have an impact on diverse applications ranging from heat engines to refrigeration, thermal regulation of buildings and thermal logic. However, experimental demonstrations have lagged far behind theoretical proposals. Here we present the first experimental results for a photon thermal diode. The device is based on asymmetric scattering of ballistic energy carriers by pyramidal reflectors. Recent theoretical work has predicted that this ballistic mechanism also requires a nonlinearity in order to yield asymmetric thermal transport, a requirement of all thermal diodes arising from the second Law of Thermodynamics, and realized here using an 'inelastic thermal collimator' element. Experiments confirm both effects: with pyramids and collimator the thermal rectification is 10.9 ± 0.8%, while without the collimator no rectification is detectable (<0.3%). PMID:25399761

  13. Graphene-based ultrafast diode

    NASA Astrophysics Data System (ADS)

    Dragoman, D.; Dragoman, M.; Plana, R.

    2010-10-01

    We present a graphene-based ballistic diode, which is able to rectify an incident signal due to an oblique gate positioned between the two terminals of the device. The operating point of the diode can be controlled by the applied gate voltage, whereas the current-voltage dependence of the device can be changed by varying the inclination angle of the gate. In particular, the ideality factor of the graphene-based diode can take values higher or lower than 1 by modifying this inclination angle. The rectifying properties of the graphene diode are thus tunable, in deep contrast with semiconductor-based diodes.

  14. Plasma reactivity in high-power impulse magnetron sputtering through oxygen kinetics

    SciTech Connect

    Vitelaru, Catalin; Lundin, Daniel; Brenning, Nils; Minea, Tiberiu

    2013-09-02

    The atomic oxygen metastable dynamics in a Reactive High-Power Impulse Magnetron Sputtering (R-HiPIMS) discharge has been characterized using time-resolved diode laser absorption in an Ar/O{sub 2} gas mixture with a Ti target. Two plasma regions are identified: the ionization region (IR) close to the target and further out the diffusion region (DR), separated by a transition region. The μs temporal resolution allows identifying the main atomic oxygen production and destruction routes, which are found to be very different during the pulse as compared to the afterglow as deduced from their evolution in space and time.

  15. REACTIVE SPUTTER DEPOSITION OF CHROMIUM NITRIDE COATINGS

    EPA Science Inventory

    The effect of substrate temperature and sputtering gas compositon on the structure and properties of chromium-chromium nitride films deposited on C-1040 steel using r.f. magnetron sputter deposition was investigated. X-ray diffraction analysis was used to determine the structure ...

  16. Sputter metalization of Wolter type optical elements

    NASA Technical Reports Server (NTRS)

    Ledger, A. M.

    1977-01-01

    An analytical task showed that the coating thickness distribution for both internal and external optical elements coated using either electron beam or sputter sources can be made uniform and will not affect the surface figure of coated elements. Also, sputtered samples of nickel, molybdenum, iridium and ruthenium deposited onto both hot and cold substrates showed excellent adhesion.

  17. Nanoscale growth twins in sputtered metal films

    NASA Astrophysics Data System (ADS)

    Zhang, X.; Anderoglu, O.; Hoagland, R. G.; Misra, A.

    2008-09-01

    This article reviews recent studies on the mechanical properties of sputtered copper and 330 stainless-steel films with {111} nanoscale growth twins preferentially oriented perpendicular to growth direction. The mechanisms of formation of growth twins during sputtering, unusually high strengths, and excellent thermal stability of nanotwinned structures are highlighted.

  18. Ion beam sputter deposited diamond like films

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1982-01-01

    A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper, and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.036, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of densities of 2.1 gm/cu cm for sputter deposited films and 2.2 gm/cu cm for simultaneously sputter deposited and Ar ion bombarded films. For films approximately 1700 A thick deposited by either process and at 5550 A wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 67,000 cm to the -1 and the transmittance was 0.1.

  19. Graphene: the ultimately thin sputtering shield

    NASA Astrophysics Data System (ADS)

    Herbig, Charlotte; Michely, Thomas

    2016-06-01

    Scanning tunneling microscopy methods are applied to investigate the potential of monolayer graphene as a sputtering shield for the underlying metal substrate. To visualize the effect, a bare and a graphene protected Ir(111) surface are irradiated with 500 eV Xe+, as well as 200 eV Xe+ and Ar+ ions, all at 1000 K. By quantitatively evaluating the sputtered material from the surface vacancy island area, we find a drastic decrease in metal sputtering for the graphene protected surface. It is demonstrated that efficient sputter protection relies on self-repair of the ion damage in graphene, which takes place efficiently in the temperature range of chemical vapor deposition growth. Based on the generality of the underlying principles of ion damage, graphene self-repair, and graphene growth, we speculate that efficient sputter protection is possible for a broad range of metals and alloys.

  20. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, Donald J.

    1988-01-01

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  1. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, D.J.

    1986-03-25

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  2. Sputter Deposition of Metallic Sponges

    SciTech Connect

    Jankowski, A F; Hayes, J P

    2002-01-18

    Metallic films are grown with a sponge-like morphology in the as-deposited condition using planar magnetron sputtering. The morphology of the deposit is characterized by metallic continuity in three dimensions with continuous porosity on the sub-micron scale. The stabilization of the metallic sponge is directly correlated with a limited range for the sputter deposition parameters of working gas pressure and substrate temperature. This sponge-like morphology augments the features as generally understood in the classic zone models of growth for physical vapor deposits. Nickel coatings are deposited with working gas pressures up to 4 Pa and for substrate temperatures up to 1100 K. The morphology of the deposits is examined in plan and in cross-section with scanning electron microscopy. The parametric range of gas pressure and substrate temperature (relative to absolute melt point) for the deposition processing under which the metallic sponges are produced appear universal for many metals, as for example, including gold, silver, and aluminum.

  3. Spatiotemporal splitting of global eigenmodes due to cross-field coupling via vortex dynamics in drift wave turbulence.

    PubMed

    Brandt, C; Thakur, S C; Light, A D; Negrete, J; Tynan, G R

    2014-12-31

    Spatiotemporal splitting events of drift wave (DW) eigenmodes due to nonlinear coupling are investigated in a cylindrical helicon plasma device. DW eigenmodes in the radial-azimuthal cross section have been experimentally observed to split at radial locations and recombine into the global eigenmode with a time shorter than the typical DW period (t≪fDW(-1)). The number of splits correlates with the increase of turbulence. The observed dynamics can be theoretically reproduced by a Kuramoto-type model of a network of radially coupled azimuthal eigenmodes. Coupling by E×B-vortex convection cell dynamics and ion gyro radii motion leads to cross-field synchronization and occasional mode splitting events. PMID:25615346

  4. Cross-Field Differences in Creative Problem-Solving Skills: A Comparison of Health, Biological, and Social Sciences

    PubMed Central

    Mumford, Michael D.; Antes, Alison L.; Caughron, Jared J.; Connelly, Shane; Beeler, Cheryl

    2010-01-01

    In the present study, 258 doctoral students working in the health, biological, and social sciences were asked to solve a series of field-relevant problems calling for creative thought. Proposed solutions to these problems were scored with respect to critical creative thinking skills such as problem definition, conceptual combination, and idea generation. Results indicated that health, biological, and social scientists differed with respect to their skill in executing various operations, or processes, involved in creative thought. Interestingly, no differences were observed as a function of the students’ level of experience. The implications of these findings for understanding cross-field, and cross-experience level, differences in creative thought are discussed. PMID:20936085

  5. Influence of crossed fields in structures combining large grain, bulk (RE)BCO superconductors and soft ferromagnetic discs

    NASA Astrophysics Data System (ADS)

    Philippe, M. P.; Fagnard, J. F.; Wéra, L.; Morita, M.; Nariki, S.; Teshima, H.; Caps, H.; Vanderheyden, B.; Vanderbemden, P.

    2016-03-01

    Bulk (RE)BCO superconductors are able to trap record magnetic fields and can be used as powerful permanent magnets in various engineering applications such as rotating machines and magnetic bearings. When such superconducting (SC) “trapped field magnets” are combined to a ferromagnetic (FM) disc, the total magnetic moment is increased with respect to that of the superconductor alone. In the present work, we study experimentally the magnetic behaviour of such hybrid FM/SC structures when they are subjected to cycles of applied field that are orthogonal to their permanent magnetization, i.e. a “crossed-field” configuration. Experimental results show that the usual “crossed-field demagnetization” caused by the cycles of transverse field is strongly reduced in the presence of the ferromagnet.

  6. Cross-Field Differences in Creative Problem-Solving Skills: A Comparison of Health, Biological, and Social Sciences.

    PubMed

    Mumford, Michael D; Antes, Alison L; Caughron, Jared J; Connelly, Shane; Beeler, Cheryl

    2010-02-01

    In the present study, 258 doctoral students working in the health, biological, and social sciences were asked to solve a series of field-relevant problems calling for creative thought. Proposed solutions to these problems were scored with respect to critical creative thinking skills such as problem definition, conceptual combination, and idea generation. Results indicated that health, biological, and social scientists differed with respect to their skill in executing various operations, or processes, involved in creative thought. Interestingly, no differences were observed as a function of the students' level of experience. The implications of these findings for understanding cross-field, and cross-experience level, differences in creative thought are discussed. PMID:20936085

  7. Spin-Wave Diode

    NASA Astrophysics Data System (ADS)

    Lan, Jin; Yu, Weichao; Wu, Ruqian; Xiao, Jiang

    2015-10-01

    A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound states in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. Our findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.

  8. Sputtering erosion in ion and plasma thrusters

    NASA Astrophysics Data System (ADS)

    Ray, Pradosh K.

    1995-08-01

    An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

  9. Particle contamination formation in magnetron sputtering processes

    SciTech Connect

    Selwyn, G.S.; Sequeda, F.; Huang, C.

    1997-07-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique which provides real-time, {ital in situ} imaging of particles {gt}0.3 {mu}m on the target, substrate, or in the plasma. Using this technique, we demonstrate that the mechanisms for particle generation, transport, and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes, due to the inherent spatial nonuniformity of magnetically enhanced plasmas. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. There, film redeposition induces filament or nodule growth. Sputter removal of these features is inhibited by the dependence of sputter yield on angle of incidence. These features enhance trapping of plasma particles, which then increases filament growth. Eventually the growths effectively {open_quotes}short-circuit{close_quotes} the sheath, causing high currents to flow through these features. This, in turn, causes mechanical failure of the growth resulting in fracture and ejection of the target contaminants into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests it may be universal to many sputter processes. {copyright} {ital 1997 American Vacuum Society.}

  10. Sputtering erosion in ion and plasma thrusters

    NASA Technical Reports Server (NTRS)

    Ray, Pradosh K.

    1995-01-01

    An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

  11. Whiskerless Schottky diode

    NASA Technical Reports Server (NTRS)

    Bishop, William L. (Inventor); Mcleod, Kathleen A. (Inventor); Mattauch, Robert J. (Inventor)

    1991-01-01

    A Schottky diode for millimeter and submillimeter wave applications is comprised of a multi-layered structure including active layers of gallium arsenide on a semi-insulating gallium arsenide substrate with first and second insulating layers of silicon dioxide on the active layers of gallium arsenide. An ohmic contact pad lays on the silicon dioxide layers. An anode is formed in a window which is in and through the silicon dioxide layers. An elongated contact finger extends from the pad to the anode and a trench, preferably a transverse channel or trench of predetermined width, is formed in the active layers of the diode structure under the contact finger. The channel extends through the active layers to or substantially to the interface of the semi-insulating gallium arsenide substrate and the adjacent gallium arsenide layer which constitutes a buffer layer. Such a structure minimizes the effect of the major source of shunt capacitance by interrupting the current path between the conductive layers beneath the anode contact pad and the ohmic contact. Other embodiments of the diode may substitute various insulating or semi-insulating materials for the silicon dioxide, various semi-conductors for the active layers of gallium arsenide, and other materials for the substrate, which may be insulating or semi-insulating.

  12. Process for preparing schottky diode contacts with predetermined barrier heights

    DOEpatents

    Chang, Y. Austin; Jan, Chia-Hong; Chen, Chia-Ping

    1996-01-01

    A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [.SIGMA.M.sub..delta. ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [.SIGMA.M.sub..delta. ]Ga-[.SIGMA.M.sub..delta. ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.

  13. Adherence of sputtered titanium carbides

    NASA Technical Reports Server (NTRS)

    Brainard, W. A.; Wheeler, D. R.

    1979-01-01

    The study searches for interface treatment that would increase the adhesion of TiC coating to nickel- and titanium-base alloys. Rene 41 (19 wt percent Cr, 11 wt percent Mo, 3 wt percent Ti, balance Ni) and Ti-6Al-4V (6 wt percent Al, 4 wt percent V, balance Ti) are considered. Adhesion of the coatings is evaluated in pin-and disk friction tests. The coatings and interface regions are examined by X-ray photoelectron spectroscopy. Results suggest that sputtered refractory compound coatings adhere best when a mixed compound of coating and substrate metals is formed in the interfacial region. The most effective type of refractory compound interface appears to depend on both substrate and coating material. A combination of metallic interlayer deposition and mixed compound interface formation may be more effective for some substrate coating combinations than either alone.

  14. Nanoscale growth twins in sputtered metal films

    SciTech Connect

    Misra, Amit; Anderoglu, Osman; Hoagland, Richard G; Zhang, X

    2008-01-01

    We review recent studies on the mechanical properties of sputtered Cu and 330 stainless steel films with {l_brace}1 1 1{r_brace} nanoscale growth twins preferentially oriented perpendicular to growth direction. The mechanisms of formation of growth twins during sputtering and the deformation mechanisms that enable usually high strengths in nanotwinned structures are highlighted. Growth twins in sputtered films possess good thermal stability at elevated temperature, providing an approach to extend the application of high strength nanostructured metals to higher temperatures.

  15. Detection of sputtered metastable atoms by autoionization

    SciTech Connect

    Wucher, A.; Berthold, W.; Oechsner, H.; Franzreb, K.

    1994-03-01

    We report on a scheme for the detection of sputter-generated metastable atoms that is based on the resonant excitation of an autoionizing state by single-photon absorption from a tunable laser. Using this technique, sputtered silver atoms ejected in the metastable 4{ital d}{sup 9}5{ital s}{sup 2}{ital D}{sub 5/2} state with an excitation energy of 3.75 eV have been detected. This represents the highest excitation energy of sputtered metastable atoms observed so far.

  16. Composition of sputtered material from CuNi alloy during Xe + ion sputtering at elevated temperatures

    NASA Astrophysics Data System (ADS)

    Sekine, Shigeyuki; Shimizu, Hazime; Ichimura, Singo

    1995-04-01

    Polycrystalline CuNi alloys were sputtered by 3 kV Xe + ions at elevated temperatures to analyze the ion-beam-induced diffusion. The time evolution of the composition of the sputtered materials from the start of the sputtering was measured by TOF-SNMS (time-of-flight sputtered neutral mass spectrometry). During removal of the Gibbsian segregation layer of copper, the sputtered flux consisted of almost only copper atoms. Then, the copper content gradually decreased due to the formation of a sputter-induced copper-depleted surface layer, and reached an almost steady state with still higher copper content than the bulk composition. From the temperature dependence of the composition at the quasi-steady state the activation energy of copper transportation through a high diffusivity path was derived to be 54 kJ mol -1 (0.56 eV). The high diffusivity path was assigned to copper diffusion through grain boundaries.

  17. Lifetime dependence of nitrided carbon stripper foils on sputter angle during N+ ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Sugai, I.; Oyaizu, M.; Takeda, Y.; Kawakami, H.; Kawasaki, K.; Hattori, T.; Kadono, T.

    2015-09-01

    We fabricated high-lifetime thin nitride carbon stripper (NCS) foils with high nitrogen contents using ion-beam sputtering with reactive nitrogen gas and investigated the dependence of their lifetimes on the sputter angle. The nitrogen in carbon foils plays a critical role in determining their lifetime. Therefore, in order to investigate the effects of the nitrogen level in NCS foils on foil lifetime, we measured the sputtering yield for different sputter angles at a sputtering voltage of 10 kV while using carbon-based targets. We also measured the nitrogen-to-carbon thickness ratios of the foils using Rutherford backscattering spectrometry. The foils made at a sputter angle of 15° using a glassy amorphous carbon target exhibited an average increase of 200-fold in lifetime when compared to commercially available foils.

  18. Cryogenic thermal diode heat pipes

    NASA Technical Reports Server (NTRS)

    Alario, J.

    1979-01-01

    The development of spiral artery cryogenic thermal diode heat pipes was continued. Ethane was the working fluid and stainless steel the heat pipe material in all cases. The major tasks included: (1) building a liquid blockage (blocking orifice) thermal diode suitable for the HEPP space flight experiment; (2) building a liquid trap thermal diode engineering model; (3) retesting the original liquid blockage engineering model, and (4) investigating the startup dynamics of artery cryogenic thermal diodes. An experimental investigation was also conducted into the wetting characteristics of ethane/stainless steel systems using a specially constructed chamber that permitted in situ observations.

  19. A new cryogenic diode thermometer

    NASA Astrophysics Data System (ADS)

    Courts, S. S.; Swinehart, P. R.; Yeager, C. J.

    2002-05-01

    While the introduction of yet another cryogenic diode thermometer is not earth shattering, a new diode thermometer, the DT-600 series, recently introduced by Lake Shore Cryotronics, possesses three features that make it unique among commercial diode thermometers. First, these diodes have been probed at the chip level, allowing for the availability of a bare chip thermometer matching a standard curve-an important feature in situations where real estate is at a premium (IR detectors), or where in-situ calibration is difficult. Second, the thermometry industry has assumed that interchangeability should be best at low temperatures. Thus, good interchangeability at room temperatures implies a very good interchangeability at cryogenic temperature, resulting in a premium priced sensor. The DT-600 series diode thermometer is available in an interchangeability band comparable to platinum RTDs with the added advantage of interchangeability to 2 K. Third, and most important, the DT-600 series diode does not exhibit an instability in the I-V characteristic in the 8 K to 20 K temperature range that is observed in other commercial diode thermometer devices [1]. This paper presents performance characteristics for the DT-600 series diode thermometer along with a comparison of I-V curves for this device and other commercial diode thermometers exhibiting an I-V instability.

  20. BIN Diode For Submillimeter Wavelengths

    NASA Technical Reports Server (NTRS)

    Maserjian, J.

    1989-01-01

    Diode formed by selective doping during epitaxial growth, starting with semi-insulating substrate. Use of high-mobility semiconductors like GaAs extends cutoff frequency. Either molecular-beam epitaxy (MBE) or organometallic chemical-vapor deposition used to form layers of diode. Planar growth process permits subsequent fabrication of arrays of diodes by standard photolithographic techniques, to achieve quasi-optical coupling of submillimeter radiation. Useful for generation of harmonics or heterodyne mixing in receivers for atmospheric and space spectroscopy operating at millimeter and submillimeter wavelengths. Used as frequency doublers or triplers, diodes of new type extend frequency range of present solid-state oscillators.

  1. Corrosion Behaviour of Sputtered Alumina Thin Films

    NASA Astrophysics Data System (ADS)

    Reddy, I. Neelakanta; Dey, Arjun; Sridhara, N.; Anoop, S.; Bera, Parthasarathi; Rani, R. Uma; Anandan, Chinnasamy; Sharma, Anand Kumar

    2015-10-01

    Corrosion studies of sputtered alumina thin films grown on stainless steel (SS) 304 were carried out by linear polarization and electrochemical impedance spectroscopy. Noticeable changes were not observed in morphology and surface roughness of films after carrying out the corrosion test. Corrosion current density (icorr) of alumina coated SS decreased up to 10-10 A cm-2 while icorr value in the range of 10-5-10-6 A cm-2 was observed for bare SS. The direct sputtered film showed superior corrosion resistance behaviour than the reactive sputtered film. This might be attributed to the difference in thickness of the films sputtered by direct and reactive methods. The electronic structure of deposited alumina films was studied both before and after corrosion test by X-ray photoelectron spectroscopy technique which also confirmed no structural changes of alumina film after exposing it to corrosive environment.

  2. High temperature, bonded titanium diboride sputter target

    SciTech Connect

    Hale, G.J.; Gates, W.G.

    1981-10-01

    A high-temperature bonding technique has been employed in the development of an improved sputter deposition target for hard, crack-prone materials such as titanium diboride (TiB/sub 2/). Titanium diboride was bonded to a thin metal backing plate, both materials having a similar linear coefficient of thermal expansion (LCTE) using a high-temperature braze alloy. The thin metal backing plate helps stabilize the movement of the target material during the sputter deposition operation. The bonded sputter target has a useable life of 50 to 75 times that of a unbonded target. This bonding technique may be used on a variety of hard, brittle, crack-prone, sputterable materials (including metal oxides, carbides borides, and nitrides). US Patent 4,209,375 has been issued as a result of this endeavor.

  3. Large Area Sputter Coating on Glass

    NASA Astrophysics Data System (ADS)

    Katayama, Yoshihito

    Large glass has been used for commercial buildings, housings and vehicles for many years. Glass size for flat displays is getting larger and larger. The glass for the 8th generation is more than 5 m2 in area. Demand of the large glass is increasing not only in these markets but also in a solar cell market growing drastically. Therefore, large area coating is demanded to plus something else on glass more than ever. Sputtering and pyrolysis are the major coating methods on large glass today. Sputtering process is particularly popular because it can deposit a wide variety of materials in good coating uniformity on the glass. This paper describes typical industrial sputtering system and recent progress in sputtering technology. It also shows typical coated glass products in architectural, automotive and display fields and comments on their functions, film stacks and so on.

  4. Heavy particle transport in sputtering systems

    NASA Astrophysics Data System (ADS)

    Trieschmann, Jan

    2015-09-01

    This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

  5. Sputtering of sodium on the planet Mercury

    NASA Technical Reports Server (NTRS)

    Mcgrath, M. A.; Johnson, R. E.; Lanzerotti, L. J.

    1986-01-01

    It is shown here that ion sputtering cannot account for the observed neutral sodium vapor column density on Mercury, but that it is an important loss mechanism for Na. Photons are likely to be the dominant stimulus, both directly through photodesorption and indirectly through thermal desorption of absorbed Na. It is concluded that the atmosphere produced is characterized by the planet's surface temperature, with the ion-sputtered Na contributing to a lesser, but more extended, component of the atmosphere.

  6. Chemical mechanical polishing characteristics of ITO thin film prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lee, Kang-Yeon; Choi, Gwon-Woo; Kim, Yong-Jae; Choi, Youn-Ok; Kim, Nam-Oh

    2012-02-01

    Indium-tin-oxide (ITO) thin films have attracted intensive interest because of their unique properties of good conductivity, high optical transmittance over the visible region and easy patterning ability. ITO thin films have found many applications in anti-static coatings, thermal heaters, solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), electroluminescent devices, sensors and organic light-emitting diodes (OLEDs). ITO thin films are generally fabricated by using various methods, such as spraying, chemical vapor deposition (CVD), evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive sputtering. In this research, ITO films were grown on glass substrates by using a radio-frequency (RF) magnetron sputtering method. In order to achieve a high transmittance and a low resistivity, we examined the various film deposition conditions, such as substrate temperature, working pressure, annealing temperature, and deposition time. Next, in order to improve the surface quality of the ITO thin films, we performed a chemical mechanical polishing (CMP) with different process parameters and compared the electrical and the optical properties of the polished ITO thin films. The best CMP conditions with a high removal rate, low nonuniformity, low resistivity and high transmittance were as follows: platen speed, head speed, polishing time, and slurry flow rate of 30 rpm, 30 rpm, 60 sec, and 60 ml/min, respectively.

  7. Sputter ejection of matter from Io

    NASA Technical Reports Server (NTRS)

    Haff, P. K.; Watson, C. C.; Yung, Y. L.

    1981-01-01

    Direct collisional interaction of magnetospheric particles, particularly 520-eV S ions, with Io, cause sputter removal of matter. It is estimated that direct sputtering of a full-disk S-containing atmosphere with an exobase at a few hundred km, can provide up to 5 x 10 to the tenth S atoms per sq cm-s. Supplies of S and O required to stabilize the torus are estimated to be from 10 to the 10th to 10 to the 12th per sq cm-s. Sputtering rates are calculated for an atmosphere containing a one percent concentration of Na and K, and are found to be large enough to supply the fluxes required to maintain the Na and K clouds. Sputtering is found to remove heavy molecules from the atmosphere, and the rate of direct sputtering of unprotected surfaces is calculated for ejections of S and Na. Atomic species on the surface are ejected at a rate proportional to the surface abundance; and plume sputtering, avalanche cascading, and ionic saltation which lead to spatial and temporal variations in the number of ejected particles are observed.

  8. Analysis of DC magnetron sputtered beryllium films

    SciTech Connect

    Price, C.W.; Hsieh, E.J.; Lindsey, E.F.; Pierce, E.L.; Norberg, J.C.

    1988-10-01

    We are evaluating techniques that alter the columnar grain structure in sputtered beryllium films on fused silica substrates. The films are formed by DC magnetron sputtering, and the columnar structure, which is characteristic of this and most other deposition techniques, is highly detrimental to the tensile strength of the films. Attempts to modify the columnar structure by using RF-biased sputtering combined with nitrogen pulsing have been successful, and this paper describes the analyses of these films. Sputtered beryllium films are quite brittle, and the columnar structure in particular tends to form a distinct intergranular fracture; therefore, the grain structure was analyzed in fractured specimens using the high-resolution capability of a scanning electron microscope (SEM) equipped with a field emission gun (FESEM). Ion microanalysis using secondary-ion mass spectroscopy (SIMS) was conducted on some specimens to determining relative contamination levels introduced by nitrogen pulsing. The capability to perform quantitative SIMS analyses using ion-implanted specimens as standards also is being developed. This work confirms that the structure of DC magnetron sputtered beryllium can be improved significantly with combined nitrogen pulsing and RF-biased sputtering. 8 refs.

  9. Anisotropy of sapphire single crystal sputtering

    SciTech Connect

    Minnebaev, K. F.; Tolpin, K. A.; Yurasova, V. E.

    2015-08-15

    We have studied the spatial distribution of particles sputtered from the base (0001) plane of a sapphire single crystal with trigonal crystalline lattice (α-Al{sub 2}O{sub 3}) that can be considered a superposition of two hexagonal close packed (hcp) structures–the ideal sublattice of oxygen and a somewhat deformed sublattice of aluminum. It is established that the particles sputtered from the base plane of sapphire are predominantly deposited along the sides of an irregular hexagon with spots at its vertices. The patterns of spots have been also studied for sputtering of particles from the (0001) face of a zinc single crystal with the hcp lattice. The spots of sputtered Zn atoms are arranged at the vertices of concentric equilateral hexagons. In both cases, the observed anisotropy of sputtering is related to focused collisions (direct and assisted focusing) and the channeling process. The chemical composition of spots has been determined in various regions of sputtered sapphire deposition. The results are discussed in comparison to analogous earlier data for secondary ion emission from an α-Al{sub 2}O{sub 3} single crystal.

  10. High power impulse magnetron sputtering discharge

    SciTech Connect

    Gudmundsson, J. T.; Brenning, N.; Lundin, D.; Helmersson, U.

    2012-05-15

    The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.

  11. Chemical Sputtering Studies of Lithiated Graphite

    NASA Astrophysics Data System (ADS)

    Raman, Priya; Groll, Andrew; Abrams, Tyler; Curreli, Davide; Andruczyk, Daniel; Ruzic, D. N.

    2012-10-01

    Lithium treatments in the National Spherical Torus Experiment have shown dramatic improvements in plasma performance. In order to understand the complex system of lithiated ATJ graphite, chemical sputtering measurements of plain and lithiated ATJ graphite are conducted in IIAX (Ion Surface Interaction Experiment) facility with a differentially pumped Magnetic Sector Residual Gas Analyzer (MSRGA). The ATJ graphite target is mounted in such way that the target can be translated along a line to different positions to get direct comparison of ATJ and lithiated ATJ. Target is heated using joule heating and is connected to a biasing circuitry. Chemical sputtering of graphite is dependent on the ion energy and substrate temperature, hence the total effects of treating ATJ graphite with lithium in hydrogen plasma is investigated in terms of different target temperatures and bias voltages. For this purpose, lithium is evaporated in-situ onto ATJ graphite and chemically sputtered species in hydrogen plasma is measured using MSRGA. The dominant chemical sputtering product is CH4. It was found that lithium treatments have suppressed the chemical sputtering of ATJ Graphite. The suppression of chemical sputtering effect is presented as a function of varying lithium thickness on ATJ Graphite.

  12. Cylindrical electron beam diode

    DOEpatents

    Bolduc, Paul E.

    1976-01-01

    A diode discharge device may include a tubular anode concentrically encircled by and spaced from a tubular cathode electrode with ends intermediate the ends of said anode electrode, and a metal conductive housing having a tubular wall disposed around the cathode electrode with end walls connected to the anode electrode. High energy electron current coupling is through an opening in the housing tubular wall to a portion of the cathode electrode intermediate its ends. Suitable utilization means may be within the anode electrode at positions to be irradiated by electrons emitted from the cathode electrode and transmitted through the anode walls.

  13. Diode laser applications in urology

    NASA Astrophysics Data System (ADS)

    Sam, Richard C.; Esch, Victor C.

    1995-05-01

    Diode lasers are air-cooled, efficient, compact devices which have the potential of very low cost when produced in quantity. The characteristics of diode lasers are discussed. Their applications in interstitial thermal treatment of the prostate, and laser ablation of prostate tissues, will be presented.

  14. Making an ultrastable diode laser

    NASA Astrophysics Data System (ADS)

    Archibald, James; Washburn, Matt; van Zijll, Marshall; Erickson, Christopher; Neyenhuis, Brian; Doermann, Greg; Durfee, Dallin

    2006-10-01

    We have constructed a 657nm diode laser with excellent stability for use in an atom interferometer. The laser is a grating-stabilized diode laser is locked to a high-finesse cavity using the Pound-Drever-Hall method. We have measured a linewidth of about 1 kHz and are working on several improvements which should further reduce our linewidth.

  15. Analysis of surface sputtering on a quantum statistical basis

    NASA Technical Reports Server (NTRS)

    Wilhelm, H. E.

    1975-01-01

    Surface sputtering is explained theoretically by means of a 3-body sputtering mechanism involving the ion and two surface atoms of the solid. By means of quantum-statistical mechanics, a formula for the sputtering ratio S(E) is derived from first principles. The theoretical sputtering rate S(E) was found experimentally to be proportional to the square of the difference between incident ion energy and the threshold energy for sputtering of surface atoms at low ion energies. Extrapolation of the theoretical sputtering formula to larger ion energies indicates that S(E) reaches a saturation value and finally decreases at high ion energies. The theoretical sputtering ratios S(E) for wolfram, tantalum, and molybdenum are compared with the corresponding experimental sputtering curves in the low energy region from threshold sputtering energy to 120 eV above the respective threshold energy. Theory and experiment are shown to be in good agreement.

  16. Gallium phosphide high temperature diodes

    SciTech Connect

    Chaffin, R.J.; Dawson, L.R.

    1981-01-01

    The purpose of this work is to develop high temperature (> 300/sup 0/C) diodes for geothermal and other energy applications. A comparison of reverse leakage currents of Si, GaAs and GaP is made. Diodes made from GaP should be usable to > 500/sup 0/C. An LPE process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers have been cut into die and metallized to make the diodes. These diodes produce leakage currents below 10/sup -3/ A/cm/sup 2/ at 400/sup 0/C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

  17. Sputtered coatings for microfluidic applications

    SciTech Connect

    Matson, Dean W.; Martin, Peter M.; Bennett, Wendy D.; Johnston, John W.; Stewart, Donald C.; Bonham, Charles C.

    2000-07-01

    Magnetron sputter-deposited features and coatings are finding a broad range of uses in microfluidic devices being developed at the Pacific Northwest National Laboratory. Such features are routinely incorporated into multilayer laminated microfluidic components where specific functionality is required, and where other methods for producing these features have been deemed unacceptable. Applications include electrochemical sensors, heaters and temperature probes, electrical leads and insulation layers, piezoelectric actuators and transducers, and chemical modification of surfaces. Small features, such as those required for the production of microsensor electrodes or miniature resistive heaters on microfluidic chips, were patterned using standard lithographic methods, or with masks produced by laser micromachining processes. Thin-film piezoelectric materials such as aluminum nitride have been deposited at low temperatures for use with temperature sensitive materials. Use of the coating technology and its application in the fabrication of specific microfluidic devices, including a groundwater sensor, miniature piezoelectric ultrasonic transducers and actuators, a polymerase chain reaction thermal cycler, and a microchannel flow diagnostic device, are discussed. Technical issues associated with these coatings, such as adhesion, chemical resistance, and surface defects are also addressed. (c) 2000 American Vacuum Society.

  18. Light Emitting Diode (LED)

    NASA Technical Reports Server (NTRS)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique called photodynamic therapy, requires the surgeon to use tiny pinhead-size Light Emitting Diodes (LEDs) (a source releasing long wavelengths of light) to activate light-sensitive, tumor-treating drugs. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can also be used for hours at a time while still remaining cool to the touch. The LED probe consists of 144 tiny pinhead-size diodes, is 9-inches long, and about one-half-inch in diameter. The small balloon aids in even distribution of the light source. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The probe was developed for photodynamic cancer therapy by the Marshall Space Flight Center under a NASA Small Business Innovative Research program grant.

  19. Structural and morphological properties of sputtered NiO thin films at various sputtering pressures

    SciTech Connect

    Reddy, A. Mallikarjuna; Reddy, Y. Ashok Kumar; Reddy, A. Sivasankar; Reddy, P. Sreedhara

    2012-06-05

    Nickel oxide thin films were successfully deposited on glass substrates at different sputtering pressures in the range of 3 x 10{sup -2} to 5 x 10{sup -2} mbar. It was observed that sputtering pressure influenced the structural and morphological properties. Structural properties were studied with X-ray diffractometer. All the deposited films were polycrystalline and exhibited cubic structure with preferential growth along (220) plane. From morphological studies it was observed that fine and uniform grains with RMS roughness of 9.4 nm were obtained when the films deposited at a sputtering pressure of 4 x 10{sup -2} mbar,. The grain size and the surface roughness decreased at higher sputtering pressures. The surface mobility of the adatoms decreased after series of collisions resulting in the decrease of grain size at high sputtering pressures.

  20. Sputtering - A vacuum deposition method for coating material.

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1972-01-01

    The sputtering method is discussed in terms of the unique features which sputter offers in depositing coatings. These features include versatility, momentum transfer, configuration of target, precise controls, and a relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and the internal stresses. The observed strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched surface, and the submicroscopic particle size. Film thickness can be controlled to a millionth of a centimeter. Very adherent films of sputtered PTFE (teflon) can be deposited in a single operation on any type of material and on any geometrical configuration.

  1. Molecular dynamics investigation of hexagonal boron nitride sputtering and sputtered particle characteristics

    NASA Astrophysics Data System (ADS)

    Smith, Brandon D.; Boyd, Iain D.

    2016-08-01

    The sputtering of hexagonal boron nitride (h-BN) by impacts of energetic xenon ions is investigated using a molecular dynamics (MD) model. The model is implemented within an open-source MD framework that utilizes graphics processing units to accelerate its calculations, allowing the sputtering process to be studied in much greater detail than has been feasible in the past. Integrated sputter yields are computed over a range of ion energies from 20 eV to 300 eV, and incidence angles from 0° to 75°. Sputtering of boron is shown to occur at energies as low as 40 eV at normal incidence, and sputtering of nitrogen at as low as 30 eV at normal incidence, suggesting a threshold energy between 20 eV and 40 eV. The sputter yields at 0° incidence are compared to existing experimental data and are shown to agree well over the range of ion energies investigated. The semi-empirical Bohdansky curve and an empirical exponential function are fit to the data at normal incidence, and the threshold energy for sputtering is calculated from the Bohdansky curve fit as 35 ± 2 eV. These results are shown to compare well with experimental observations that the threshold energy lies between 20 eV and 40 eV. It is demonstrated that h-BN sputters predominantly as atomic boron and diatomic nitrogen, and the velocity distribution function (VDF) of sputtered boron atoms is investigated. The calculated VDFs are found to reproduce the Sigmund-Thompson distribution predicted by Sigmund's linear cascade theory of sputtering. The average surface binding energy computed from Sigmund-Thompson curve fits is found to be 4.5 eV for ion energies of 100 eV and greater. This compares well to the value of 4.8 eV determined from independent experiments.

  2. Inverse I-V Injection Characteristics of ZnO Nanoparticle-Based Diodes.

    PubMed

    Mundt, Paul; Vogel, Stefan; Bonrad, Klaus; von Seggern, Heinz

    2016-08-10

    Simple Al/ZnO(NP)/Au diodes produced by spin coating of ZnO nanoparticle dispersions (ZnO(NP)) on Al/Al2O3 and Au substrates and subsequent Au deposition have been investigated to understand electron injection properties of more complex devices, incorporating ZnO(NP) as injection layer. Inverse I-V characteristics have been observed compared to conventional Al/ZnO(SP)/Au diodes produced by reactive ion sputtering of ZnO. SEM micrographs reveal that the void-containing contact of ZnO(NP) with the bottom Al electrode and the rough morphology of the top Au electrode are likely to be responsible for the observed injection and ejection probabilities of electrons. A simple tunneling model, incorporating the voids, explains the strongly reduced injection currents from Al whereas the top electrode fabricated by vapor deposition of Au onto the nanoparticle topology adopts the inverse ZnO(NP) morphology leading to enlarged injection areas combined with Au-tip landscapes. These tips in contrast to the smooth sputtered ZnO(SP) lead to electric field enhancement and strongly increased injection of electrons in reverse direction. The injected charge piles up at the barrier generated by voids between ZnO(NP) and the bottom electrode forcing a change in the barrier shape and therefore allowing for higher ejection rates. Both effects in combination explain the inverse I-V characteristic of nanoparticle based diodes. PMID:27443793

  3. Examination of the effects of aluminium contamination for PSII fabricated diodes

    SciTech Connect

    Speth, R.R.; Shohet, J.L.; Booske, J.H.; Gearhart, S.S.; Liu, H.; Mau, R.

    1996-12-31

    Plasma Source Ion Implantation (PSII) has long been regarded as a possible alternative to classical ion implantation. The benefits of PSII, such as low energy high dose implants and its comparatively small footprint, become increasingly tempting for integrated circuit fabrication as device dimensions shrink. An open question concerns the effect of plasma-sputtered contaminant ions on device characteristics. To address the contamination issue, a suite of experiments is currently underway which will quantify the allowable level of contamination in a diode array. The array of diodes is fabricated on 3 inch N type <100> P-doped silicon waters. The first contaminant to be studied is aluminum since it represents a preferred material for constructing PSII chambers, and it is expected that aluminum will be sputtered from the chamber walls. The experiment is a 2{sup 3} factorial design varying implant energy, aluminum concentration and their effects on the performance of test diodes of various dimensions. The measured responses are idealty factor, breakdown voltage and reverse bias leakage current. Results of these experiments as well as future directions of investigation will be presented.

  4. Effects of the duty ratio on the niobium oxide film deposited by pulsed-DC magnetron sputtering methods.

    PubMed

    Eom, Ji Mi; Oh, Hyun Gon; Cho, Il Hwan; Kwon, Sang Jik; Cho, Eou Sik

    2013-11-01

    Niobium oxide (Nb2O5) films were deposited on p-type Si wafers and sodalime glasses at a room temperature using in-line pulsed-DC magnetron sputtering system with various duty ratios. The different duty ratio was obtained by varying the reverse voltage time of pulsed DC power from 0.5 to 2.0 micros at the fixed frequency of 200 kHz. From the structural and optical characteristics of the sputtered NbOx films, it was possible to obtain more uniform and coherent NbOx films in case of the higher reverse voltage time as a result of the cleaning effect on the Nb2O5 target surface. The electrical characteristics from the metal-insulator-semiconductor (MIS) fabricated with the NbOx films shows the leakage currents are influenced by the reverse voltage time and the Schottky barrier diode characteristics. PMID:24245329

  5. Sputtering of Lunar Regolith by Solar Wind Protons and Heavy Ions, and General Aspects of Potential Sputtering

    NASA Technical Reports Server (NTRS)

    Alnussirat, S. T.; Sabra, M. S.; Barghouty, A. F.; Rickman, Douglas L.; Meyer, F.

    2014-01-01

    New simulation results for the sputtering of lunar soil surface by solar-wind protons and heavy ions will be presented. Previous simulation results showed that the sputtering process has significant effects and plays an important role in changing the surface chemical composition, setting the erosion rate and the sputtering process timescale. In this new work and in light of recent data, we briefly present some theoretical models which have been developed to describe the sputtering process and compare their results with recent calculation to investigate and differentiate the roles and the contributions of potential (or electrodynamic) sputtering from the standard (or kinetic) sputtering.

  6. The pumping of hydrogen and helium by sputter-ion pumps. Revision 3/93

    SciTech Connect

    Welch, K.M.; Pate, D.J.; Todd, R.J.

    1992-12-31

    The pumping of hydrogen in diode and triode sputter-ion pumps is discussed. The type of cathode material used in these pumps is shown to have a significant impact on the effectiveness with which hydrogen is pumped. Examples of this include data for pumps with aluminum and titanium-alloy cathodes. Diode pumps with aluminum cathodes are shown to be no more effective in the pumping of hydrogen than in the pumping of helium. The use of titanium or titanium alloy anodes is also shown to measurably impact on the speed of these pumps at.very low pressures. This stems from the fact that hydrogen is {times}10{sup 6} more soluble in titanium than in stainless steel. Hydrogen becomes resident in the anodes because of fast neutral burial. Lastly, quantitative data are given for the He speeds and capacities of both noble and conventional diode and triode pumps. The effectiveness of various pump regeneration procedures, subsequent to the pumping of He, is reported.These included bakeout and N{sub 2} glow discharge cleaning. The comparative desorption of He with the subsequent pumping of N{sub 2} is reported on. The N{sub 2} speed of these pumps was used as the benchmark for defining the size of the pumps vs. their respective He speeds.

  7. Diode Structure for Microwave and Infrared Applications

    NASA Technical Reports Server (NTRS)

    Alcorn, George; Leinteran, Charles; Chiang, Bing

    1987-01-01

    Microwave signals switched or modulated optically. Planar diode with transparent cathode made in BaAs, Si, and InSb versions. Depending on specific configuration and material, such diode used for optical modulation of microwave signal or as infrared detector. Transparent cathode fabricated on GaAs diode so diode illuminates to generate and control short-circuit current.

  8. Laser diode array and transmission optics

    NASA Technical Reports Server (NTRS)

    Kwon, Jin H.

    1989-01-01

    Information on laser diode array and transmission optics is given in viewgraph form. Information is given on coherent combining of laser diode arrays, amplification through a laser diode array, the far field pattern of a laser diode transmitter, and beam diameter at receiver vs. transmission distance.

  9. Sputtering properties of tungsten 'fuzzy' surfaces

    NASA Astrophysics Data System (ADS)

    Nishijima, D.; Baldwin, M. J.; Doerner, R. P.; Yu, J. H.

    2011-08-01

    Sputtering yields of He-induced W 'fuzzy' surfaces bombarded by Ar have been measured in the linear divertor plasma simulator PISCES-B. It is found that the sputtering yield of a fuzzy surface, Yfuzzy, decreases with increasing fuzzy layer thickness, L, and saturates at ˜10% of that of a smooth surface, Ysmooth, at L > 1 μm. The reduction in the sputtering yield is suspected to be due mainly to the porous structure of fuzz, since the ratio, Yfuzzy/Ysmooth follows (1 - pfuzz), where pfuzz is the fuzz porosity. Further, Yfuzzy/Ysmooth is observed to increase with incident ion energy, Ei. This may be explained by an energy dependent change in the angular distribution of sputtered W atoms, since at lower Ei, the angular distribution is observed to become more butterfly-shaped. That is, a larger fraction of sputtered W atoms can line-of-sight deposit/stick onto neighboring fuzz nanostructures for lower Ei butterfly distributions, resulting in lower ratio of Yfuzzy/Ysmooth.

  10. Emitron: microwave diode

    DOEpatents

    Craig, G.D.; Pettibone, J.S.; Drobot, A.T.

    1982-05-06

    The invention comprises a new class of device, driven by electron or other charged particle flow, for producing coherent microwaves by utilizing the interaction of electromagnetic waves with electron flow in diodes not requiring an external magnetic field. Anode and cathode surfaces are electrically charged with respect to one another by electron flow, for example caused by a Marx bank voltage source or by other charged particle flow, for example by a high energy charged particle beam. This produces an electric field which stimulates an emitted electron beam to flow in the anode-cathode region. The emitted electrons are accelerated by the electric field and coherent microwaves are produced by the three dimensional spatial and temporal interaction of the accelerated electrons with geometrically allowed microwave modes which results in the bunching of the electrons and the pumping of at least one dominant microwave mode.

  11. White light emitting diodes

    NASA Astrophysics Data System (ADS)

    Baur, J.; Schlotter, P.; Schneider, J.

    Using blue-emitting GaN LEDs on SiC substrate chips as primary light sources, we have fabricated green, yellow, red and white light emitting diodes (LUCOLEDs). The generation of mixed colors, as turquoise and magenta, is also demonstrated. The underlying physical principle is that of luminescence downconversion (Stokes shift), as typical for organic dye molecules and many inorganic phosphors. For white light generation via the LUCOLED principle, the phosphor Y3Al5O12:Ce3+(4f1) is ideally suited. The optical characteristics of Ce3+(4f1) in Y3Al5O12(YAG) are discussed in detail. Possibilities to "tune" the white color by various substitutions in the garnet lattice are shortly outlined.

  12. Diode Laser Arrays

    NASA Astrophysics Data System (ADS)

    Botez, Dan; Scifres, Don R.

    1994-08-01

    This book provides a comprehensive overview of the fundamental principles and applications of semiconductor diode laser arrays. All of the major types of arrays are discussed in detail, including coherent, incoherent, edge- and surface-emitting, horizontal- and vertical-cavity, individually addressed, lattice- matched and strained-layer systems. The initial chapters cover such topics as lasers, amplifiers, external-cavity control, theoretical modeling, and operational dynamics. Spatially incoherent arrays are then described in detail, and the uses of vertical-cavity surface emitter and edge-emitting arrays in parallel optical-signal processing and multi-channel optical recording are discussed. Researchers and graduate students in solid state physics and electrical engineering studying the properties and applications of such arrays will find this book invaluable.

  13. Unstable resonator diode laser

    SciTech Connect

    Clark, G.L.

    1988-04-19

    In a semiconductor diode laser, a structure is described comprising: a generally planar active layer, across which a forward bias voltage is applied, cladding layers adjacent to the active layer, to confine light in a direction perpendicular to the active layer, and first and second facets; in which the first facet is curved to present a concave part-cylindrical reflective surface toward the active layer, and in which the second facet includes a curved portion presenting a convex part-cylindrical reflective surface toward the active layer and a planar portion that is non-reflective. The curvatures of the two curved surfaces have axes of curvature that are approximately perpendicular to the active layer, the curvatures being selected to form an unstable resonator, in which light is confined in a particular sense by the cladding layers and from which energy is out-coupled through the planar portion of the second facet.

  14. Sputtering of amorphous silicon nitride irradiated with energetic C60 ions: Preferential sputtering and synergy effect between electronic and collisional sputtering

    NASA Astrophysics Data System (ADS)

    Kitayama, T.; Morita, Y.; Nakajima, K.; Narumi, K.; Saitoh, Y.; Matsuda, M.; Sataka, M.; Toulemonde, M.; Kimura, K.

    2015-12-01

    Amorphous silicon nitride films (thickness 30 nm) deposited on Si(0 0 1) were irradiated with 30-1080 keV C60 and 100 MeV Xe ions to fluences ranging from 2 × 1011 to 1 × 1014 ions/cm2. The composition depth profiles of the irradiated samples were measured using high-resolution Rutherford backscattering spectrometry. The sputtering yields were estimated from the derived composition profiles. Pronounced preferential sputtering of nitrogen was observed in the electronic energy loss regime. In addition, a large synergy effect between the electronic and collisional sputtering was also observed. The sputtering yields were calculated using the unified thermal spike model to understand the observed results. Although the calculated results reproduced the observed total sputtering yields with a lowered sublimation energy, the observed preferential sputtering of nitrogen could not be explained. The present results suggest an additional sputtering mechanism related to the electronic energy loss.

  15. Energization in regions of CIRs unconnected to shocks are probably not the result of cross-field transport

    NASA Technical Reports Server (NTRS)

    Intriligator, Devrie S.; Siscoe, George

    1995-01-01

    Corotating energetic ion populations (CEIPs) associated with the forward and reverse shocks of corotating interaction regions (CIRs) are observed in CIRs at places where models say are magnetically unconnected to either shock. Such disconnections between CEIPs and shocks are common and have been documented with data from Pioneers 10 and 11 and confirmed with data from Ulysses. They pose a problem for models that account for these CEIPs in terms of ion energization at the shocks followed by ion propagation along field lines. Two possible resolutions to this problem have been suggested: diffusion of the ions across field lines and extension of the ion energization process to regions beyond the shock waves. Here we quantitatively examine the first of these possibilities. We give the Green's function solution to the convection-diffusion equation applied to idealized CIR geometry, with a source at the reverse shock -- the main producer of CEIPs. Two kinds of diffusion are considered: resonant diffusion and stochastic field line diffusion. We find that for resonant diffusion the computed ratio is many orders of magnitudes below the observed ratio. For stochastic field line diffusion, the computed ratio approximately equals the observed ratio if a diffusion coefficient appropriate to the free solar wind is used. It is several orders of magnitude below the observed ratio, however, if a diffusion coefficient appropriate to CIRs is used. We conclude that cross-field diffusion probably does not account for the presence of energetic ions in regions of CIRs that are magnetically unconnected to its shock waves. We suggest that the alternative possibility -- the energetic ions in regions magnetically unconnected to shocks result from an acceleration process that is independent of shocks -- be pursued to the point where quantitative tests can be performed.

  16. Laterally injected light-emitting diode and laser diode

    DOEpatents

    Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

    2015-06-16

    A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

  17. Solar Wind Sputtering of Lunar Surface Materials: Role and Some Possible Implications of Potential Sputtering

    NASA Technical Reports Server (NTRS)

    Barghouty, A. F.; Adams, J. H., Jr.; Meyer, F.; Reinhold, c.

    2010-01-01

    Solar-wind induced sputtering of the lunar surface includes, in principle, both kinetic and potential sputtering. The role of the latter mechanism, however, in many focused studies has not been properly ascertained due partly to lack of data but can also be attributed to the assertion that the contribution of solar-wind heavy ions to the total sputtering is quite low due to their low number density compared to solar-wind protons. Limited laboratory measurements show marked enhancements in the sputter yields of slow-moving, highly-charged ions impacting oxides. Lunar surface sputtering yields are important as they affect, e.g., estimates of the compositional changes in the lunar surface, its erosion rate, as well as its contribution to the exosphere as well as estimates of hydrogen and water contents. Since the typical range of solar-wind ions at 1 keV/amu is comparable to the thickness of the amorphous rim found on lunar soil grains, i.e. few 10s nm, lunar simulant samples JSC-1A AGGL are specifically enhanced to have such rims in addition to the other known characteristics of the actual lunar soil particles. However, most, if not all laboratory studies of potential sputtering were carried out in single crystal targets, quite different from the rim s amorphous structure. The effect of this structural difference on the extent of potential sputtering has not, to our knowledge, been investigated to date.

  18. Ion-beam sputtering increases solar-cell efficiency

    NASA Technical Reports Server (NTRS)

    Burk, D. E.; Dubow, J. B.; Sites, R. R.

    1977-01-01

    Ion-beam sputtering, fabrication of oxide-semiconductor-on-silicon (OSOS) solar cells, results in cells of 12% efficiency. Ion-beam sputtering technique is compatible with low-cost continuous fabrication and requires no high-temperature processing.

  19. Physical sputtering of metallic systems by charged-particle impact

    SciTech Connect

    Lam, N.Q.

    1989-12-01

    The present paper provides a brief overview of our current understanding of physical sputtering by charged-particle impact, with the emphasis on sputtering of metals and alloys under bombardment with particles that produce knock-on collisions. Fundamental aspects of ion-solid interactions, and recent developments in the study of sputtering of elemental targets and preferential sputtering in multicomponent materials are reviewed. We concentrate only on a few specific topics of sputter emission, including the various properties of the sputtered flux and depth of origin, and on connections between sputtering and other radiation-induced and -enhanced phenomena that modify the near-surface composition of the target. The synergistic effects of these diverse processes in changing the composition of the integrated sputtered-atom flux is described in simple physical terms, using selected examples of recent important progress. 325 refs., 27 figs.

  20. Ion beam sputtering in electric propulsion facilities

    NASA Technical Reports Server (NTRS)

    Sovey, James S.; Patterson, Michael J.

    1991-01-01

    Experiments were undertaken to determine sputter yields of potential ion beam target materials, to assess the impact of charge exchange on beam diagnostics in large facilities, and to examine material erosion and deposition after a 957-hour test of a 5 kW-class ion thruster. The xenon ion sputter yield of flexible graphite was lower than other graphite forms especialy at high angles of incidence. Ion beam charge exchange effects were found to hamper beam probe current collection diagnostics even at pressures from 0.7 to 1.7 mPa. Estimates of the xenon ion beam envelope were made and predictions of the thickness of sputter deposited coatings in the facility were compared with measurements.

  1. Possible isotopic fractionation effects in sputtered minerals

    NASA Technical Reports Server (NTRS)

    Haff, P. K.; Watson, C. C.; Tombrello, T. A.

    1980-01-01

    A model which makes definite predictions for the fractionation of isotopes in sputtered material is discussed. The fractionation patterns are nonlinear, and the pattern for a particular set of isotopes depends on the chemical matrix within which those isotopes are contained. Calculations are presented for all nonmonoisotopic elements contained in the minerals perovskite, anorthite, ackermanite, enstatite, and troilite. All isotopes are fractionated at the level of approximately 4-6 deg/o per atomic mass unit. Oxygen is always positively fractionated (heavier isotopes sputtered preferentially), and heavier elements are generally negatively fractioned (light isotopes sputtered preferentially). The value of Delta (O-18:O-16) is always less by about 1.8 deg/o than a linear extrapolation based upon the calculated delta (O-17:O-16) value would suggest. The phenomenon of both negative and positive fractionation patterns from a single target mineral are used to make an experimental test of the proposed model.

  2. Ion beam sputtering in electric propulsion facilities

    NASA Technical Reports Server (NTRS)

    Sovey, James S.; Patterson, Michael J.

    1991-01-01

    Experiments were undertaken to determine sputter yields of potential ion beam target materials, to assess the impact of charge exchange on beam diagnostics in large facilities, and to examine material erosion and deposition after a 957 hr test of a 5 kW-class ion thruster. The xenon ion sputter yield of flexible graphite was lower than other graphite forms especially at high angles of incidence. Ion beam charge exchange effects were found to hamper beam probe current collection diagnostics even at pressures from 0.7 to 1.7 mPa. Estimates of the xenon ion beam envelope were made and predictions of the thickness of sputter deposited coatings in the facility were compared with measurements.

  3. CME impact on Mercury's sputtered exospheric environment

    NASA Astrophysics Data System (ADS)

    Pfleger, M.; Lichtenegger, H. I. M.; Lammer, H.; Mura, A.; Wurz, P.; Martin-Fernandez, J. A.

    2013-09-01

    Solar wind and magnetospheric plasma precipitation onto the surface of Mercury triggers the formation of exospheric particle populations by sputtering processes. Numerical modeling of Mercury's magnetosphere has shown that the weak intrinsic magnetic field of the planet is sufficient to prevent the equatorial regions from being impacted by solar wind ions during moderate solar wind conditions. However, intense fluxes of protons are expected to hit the auroral regions, giving rise to the release of surface elements at high latitudes by ion sputtering. During high solar wind dynamic pressure conditions in the case of CME events, the solar wind protons will have access to Mercury's entire dayside surface, which may result in a considerable filling of the exosphere by sputtered surface material.

  4. Fundamental Study of Boron Carbide Sputtering

    NASA Astrophysics Data System (ADS)

    Karki, Sudarshan; Yeoun, Dae; Janjua, Saad; Driver, Marcus; Caruso, Anthony

    2009-03-01

    Boron-rich carbides belong to a special class of solids whose main structural unit is the twelve atom icosahedra. When depositing thin films of boron carbide (nominally B4C) by RF or pulsed DC magnetron sputtering, the individual sputtered or ablated cluster size and the temperature of the substrate to which the clusters adsorb to form the film, greatly affects the bulk film physical and electronic structure. This talk will present mass spectrometry data of the target clusters as a function of RF power, DC bias and chamber pressure toward the goal of modeling and understanding how the icosahedral based boron-rich materials sputter and the resultant control over the final film properties. Argon trapped into the film during the deposition as determined by X-Ray photoemission will also be discussed.

  5. Characterization of ZnO:SnO2 (50:50) thin film deposited by RF magnetron sputtering technique

    NASA Astrophysics Data System (ADS)

    Cynthia, S. R.; Sivakumar, R.; Sanjeeviraja, C.; Ponmudi, S.

    2016-05-01

    Zinc oxide (ZnO) and tin oxide (SnO2) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO2 (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

  6. Intergalactic medium metal enrichment through dust sputtering

    NASA Astrophysics Data System (ADS)

    Bianchi, Simone; Ferrara, Andrea

    2005-04-01

    We study the motion of dust grains into the intergalactic medium (IGM) around redshift z= 3, to test the hypothesis that grains can efficiently pollute the gas with metals through sputtering. We use the results available in the literature for radiation-driven dust ejection from galaxies as initial conditions and follow the motion onwards. Via this mechanism, grains are ejected into the IGM with velocities >100 km s-1 as they move supersonically, grains can be efficiently eroded by non-thermal sputtering. However, Coulomb and collisional drag forces effectively reduce the charged grain velocity. Up-to-date sputtering yields for graphite and silicate (olivine) grains have been derived using the code TRANSPORT OF IONS IN MATTER (TRIM), for which we provide analytic fits. After training our method on a homogeneous density case, we analyse the grain motion and sputtering in the IGM density field as derived from a Λ cold dark matter (CDM) cosmological simulation at z= 3.27. We found that only large (a>~ 0.1μm) grains can travel up to considerable distances (few ×100 kpc physical) before being stopped. Resulting metallicities show a well-defined trend with overdensity δ. The maximum metallicities are reached for 10 < δ < 100[corresponding to systems, in quasi-stellar object (QSO) absorption spectra, with 14.5 < log N(HI) < 16]. However the distribution of sputtered metals is very inhomogeneous, with only a small fraction of the IGM volume polluted by dust sputtering (filling factors of 18 per cent for Si and 6 per cent for C). For the adopted size distribution, grains are never completely destroyed; nevertheless, the extinction and gas photoelectric heating effects resulting from this population of intergalactic grains are well below current detection limits.

  7. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  8. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  9. Ion beam sputtering of Ag - Angular and energetic distributions of sputtered and scattered particles

    NASA Astrophysics Data System (ADS)

    Feder, René; Bundesmann, Carsten; Neumann, Horst; Rauschenbach, Bernd

    2013-12-01

    Ion beam sputter deposition (IBD) provides intrinsic features which influence the properties of the growing film, because ion properties and geometrical process conditions generate different energy and spatial distribution of the sputtered and scattered particles. A vacuum deposition chamber is set up to measure the energy and spatial distribution of secondary particles produced by ion beam sputtering of different target materials under variation of geometrical parameters (incidence angle of primary ions and emission angle of secondary particles) and of primary ion beam parameters (ion species and energies).

  10. Method of sputter etching a surface

    DOEpatents

    Henager, Jr., Charles H.

    1984-01-01

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

  11. Carbonaceous Particles Production in a Sputtering Discharge

    SciTech Connect

    Dominique, Claire; Sant, Marco; Arnas, Cecile

    2005-10-31

    Spherical dust particles have been produced in argon glow discharge by sputtering of a graphite cathode. Their size varies from 40 to 200 nm depending on the distance between the two electrodes and the largest ones have a cauliflower shape. Simulations giving the evolution of the energy distribution of sputtered carbon atoms suggest a mechanism of growth by carbon vapour condensation. The chemical composition and structure of particles have been investigated by infrared spectroscopy and appear to be a complex arrangement of the carbon atoms and hetero-atoms.

  12. Magnetospheric Sputtering Source of the Moon's Exosphere

    NASA Astrophysics Data System (ADS)

    Moore, L. E.; Wilson, J. K.; Mendillo, M.

    2002-09-01

    Observations of lunar eclipses over the past decade have revealed that the Moon's transient sodium atmosphere at full Moon is both denser and more extended near equinox than it is near solstice. This fact suggests the presence of a variable magnetospheric source of sodium. An investigation of this source is carried out by modeling combinations of two sources: a constant source from micrometeor sputtering and photon-stimulated desorption, and a variable source (presumably plasma sputtering), which is higher during equinox conditions and lower during solstice conditions.

  13. Sputtering of dimers off a silicon surface

    NASA Astrophysics Data System (ADS)

    Nietiadi, Maureen L.; Rosandi, Yudi; Kopnarski, Michael; Urbassek, Herbert M.

    2012-10-01

    We present experimental and molecular-dynamics simulation results of the sputtering of a Si surface by 2 keV Ar ions. Results on both the monomer and dimer distributions are presented. In simulation, these distributions follow a generalized Thompson law with power exponent n=2 and n=3, respectively. The experimental data, obtained via plasma post-ionization in an SNMS (secondary neutral mass spectrometry) apparatus, show good agreement with respect to the dimer fraction, and the relative energy distributions of dimers and monomers. The consequences for the dimer sputtering mechanism are discussed.

  14. Method of sputter etching a surface

    DOEpatents

    Henager, C.H. Jr.

    1984-02-14

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

  15. Temperature measurement of sputtered metal dimers

    SciTech Connect

    Fayet, P.; Wolf, J.P.; Woeste, L.

    1986-05-15

    The temperatures of sputtered alkali-metal dimers have been measured using one- and two-photon ionization spectroscopy. They are estimated to be 1470 +- 300 K, 1025 +- 200 K, and 1000 +- 200 K for Cs/sub 2/, K/sub 2/, and Na/sub 2/, respectively. The vibrational and rotational temperatures are found to be very similar. No dependence of the dimer excitation is found, neither on target temperature nor on the primary-ion energy. The results are compared with some currently used models to explain cluster formation in sputtering experiments.

  16. Enhanced vbasis laser diode package

    SciTech Connect

    Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

    2014-08-19

    A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

  17. Thermometric Property of a Diode.

    ERIC Educational Resources Information Center

    Inman, Fred W.; Woodruff, Dan

    1995-01-01

    Presents a simple way to implement the thermometric property of a semiconductor diode to produce a thermometer with a nearly linear dependence upon temperature over a wide range of temperatures. (JRH)

  18. Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

    NASA Astrophysics Data System (ADS)

    Yongshun, Wang; Li, Rui; Ghaffar, Adnan; Zaixing, Wang; Chunjuan, Liu

    2015-02-01

    In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode, a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation, NiPt60 sputtering, silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6-11.4 μm and (2.2-2.4) × 1015 cm-3 doping concentration. The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 °C, that is 50 °C higher than that of the traditional one; the reverse voltage capacity VR can reach 112 V, that is 80 V higher than that of the traditional one; the leakage current is only 2 μA and the forward conduction voltage drop is VF = 0.71 V at forward current IF = 3 A.

  19. Method of making segmented pyrolytic graphite sputtering targets

    DOEpatents

    McKernan, Mark A.; Alford, Craig S.; Makowiecki, Daniel M.; Chen, Chih-Wen

    1994-01-01

    Anisotropic pyrolytic graphite wafers are oriented and bonded together such that the graphite's high thermal conductivity planes are maximized along the back surface of the segmented pyrolytic graphite target to allow for optimum heat conduction away from the sputter target's sputtering surface and to allow for maximum energy transmission from the target's sputtering surface.

  20. Method of making segmented pyrolytic graphite sputtering targets

    DOEpatents

    McKernan, M.A.; Alford, C.S.; Makowiecki, D.M.; Chen, C.W.

    1994-02-08

    Anisotropic pyrolytic graphite wafers are oriented and bonded together such that the graphite's high thermal conductivity planes are maximized along the back surface of the segmented pyrolytic graphite target to allow for optimum heat conduction away from the sputter target's sputtering surface and to allow for maximum energy transmission from the target's sputtering surface. 2 figures.

  1. Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Jhanwar, Prachi; Kumar, Arvind; Verma, Seema; Rangra, K. J.

    2016-04-01

    Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution X-ray diffraction is used to characterize the microstructure of Ru films deposited on SiO2 surface. The peak (002) is more sharp and intense with full width at half maximum (FWHM) of 0.37° at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film. The film deposited at high sputtering power also showed lower resistivity (12.40 µΩ-cm) and higher mobility (4.82 cm2/V.s) as compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).

  2. Amorphous silicon as electron transport layer for colloidal semiconductor nanocrystals light emitting diode

    SciTech Connect

    Song Tao; Shen Xiaojuan; Sun Baoquan; Zhang Fute; Zhang Xiaohong; Zhu Xiulin

    2009-12-07

    We demonstrate the fabrication of light-emitting diodes (LEDs) made from all-inorganic colloidal semiconducting nanocrystals (NCs). The diode utilizes a sandwich structure formed by placing CdSe/CdS NCs between two layers of Si and Ag{sub x}O, which act as electron- and hole-transporting materials, respectively. The photoluminescence properties of NCs are rendered less dependent upon surface chemistry and chemical environment by growing a thick CdS shell. It also enhances stability of the NCs during the process of magnetron sputtering for silicon deposition. The resulting LED device exhibits a low turn-on voltage of 2.5 V and the maximum external quantum efficiency of nearly 0.08%.

  3. Measuring size dependent electrical properties from nanoneedle structures: Pt/ZnO Schottky diodes

    SciTech Connect

    Mao, Shimin; Anderson, Daniel D.; Shang, Tao; Park, Byoungnam; Dillon, Shen J.

    2014-04-14

    This work reports the fabrication and testing of nanoneedle devices with well-defined interfaces that are amenable to a variety of structural and electrical characterization, including transmission electron microscopy. Single Pt/ZnO nanoneedle Schottky diodes were fabricated by a top down method using a combination of electro-polishing, sputtering, and focused ion beam milling. The resulting structures contained nanoscale planar heterojunctions with low ideality factors, the dimensions of which were tuned to study size-dependent electrical properties. The diameter dependence of the Pt/ZnO diode barrier height is explained by a joule heating effect and/or electronic inhomogeneity in the Pt/ZnO contact area.

  4. Electronic Transport of an Ni/ n-GaAs Diode Analysed Over a Wide Temperature Range

    NASA Astrophysics Data System (ADS)

    Guzel, A.; Duman, S.; Yildirim, N.; Turut, A.

    2016-06-01

    We have reported a study on current-voltage ( I-V) characteristics and capacitance-voltage ( C-V) of an Ni/ n-GaAs Schottky barrier diode in a wide temperature ( T) range of 100-320 K in steps of 20 K, which is prepared by a magnetron direct current sputtering technique. The ideality factor decreases and barrier height (BH) increases with an increase in the temperature. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities in the BH. It has been seen that the junction current is dominated by thermionic field emission. The carrier concentration, diffusion potential, BH, Fermi energy level and the temperature coefficient of the BH have been calculated from the temperature-dependent C-V-T characteristics.

  5. Light Emitting Diodes (LEDs)

    NASA Technical Reports Server (NTRS)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique, called Photodynamic Therapy, requires the surgeon to use tiny, pinhead-size Light Emitting Diodes (LEDs) (a source that releases long wavelengths of light ) to activate light-sensitive, tumor-treating drugs. 'A young woman operated on in May 1999 has fully recovered with no complications and no evidence of the tumor coming back,' said Dr. Harry Whelan, a pediatric neurologist at the Medical Hospital of Wisconsin in Milwaukee. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can be used for hours at a time while still remaining cool to the touch. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The LEDs, developed and managed by NASA's Marshall Space Flight Center, have been used on seven Space Shuttle flights inside the Microgravity Astroculture Facility. This technology has also been successfully used to further commercial research in crop growth.

  6. Magnetron Sputtering Deposits Corrosion-Resistant Alloy

    NASA Technical Reports Server (NTRS)

    Khanna, S. K.; Thakoor, A. P.; Williams, R. M.

    1986-01-01

    Dense, amorphous, metallic film resists corrosion attack by acid. Coatings thermally stable up to 800 degrees C and made corrosion resistant by proper choice of sputtering deposition conditions. Protective, corrosionresistant coatings applied to process equipment that comes in contact with aqueous, neutral, or acidic solutions in chemical, petroleum, and paper industries, in wastewater treatment, and in heat exchangers.

  7. RF Sputtering of Gold Contacts On Niobium

    NASA Technical Reports Server (NTRS)

    Barr, D. W.

    1983-01-01

    Reliable gold contacts are deposited on niobium by combination of RF sputtering and photolithography. Process results in structures having gold only where desired for electrical contact. Contacts are stable under repeated cycling from room temperature to 4.2 K and show room-temperature contact resistance as much as 40 percent below indium contacts made by thermalcompression bonding.

  8. Carbon-Nanotube Schottky Diodes

    NASA Technical Reports Server (NTRS)

    Manohara, Harish; Wong, Eric; Schlecht, Erich; Hunt, Brian; Siegel, Peter

    2006-01-01

    Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid

  9. Gas Sensing Diode and Method of Manufacturing

    NASA Technical Reports Server (NTRS)

    Hunter, Gary William (Inventor)

    2000-01-01

    A diode for sensing hydrogen and hydrocarbons and the process for manufacturing the diode are disclosed. The diode is a Schottky diode which has a palladium chrome contact on the C-face of an n-type 6H Silicon carbide epilayer. The epilayer is grown on the C-face of a 6H silicon carbide substrate. The diode is capable of measuring low concentrations of hydrogen and hydrocarbons at high temperatures, for example, 800 C. The diode is both sensitive and stable at elevated temperatures.

  10. Gas Sensing Diode Comprising SiC

    NASA Technical Reports Server (NTRS)

    Hunter, Gary William (Inventor)

    2001-01-01

    A diode for sensing hydrogen and hydrocarbons and the process for manufacturing the diode are disclosed. The diode is a Schottky diode which has a palladium chrome contact on the C-face of an n-type 6H Silicon carbide epilayer. The epilayer is grown on the C-face of a 6H silicon carbide substrate. The diode is capable of measuring low concentrations of hydrogen and hydrocarbons at high temperatures, for example, 800 degrees C. The diode is both sensitive and stable at elevated temperatures.

  11. Surface segregation during alloy sputtering and implantation

    NASA Astrophysics Data System (ADS)

    Andersen, Hans Henrik; Stenum, Bjarne; Sørensen, Tom; Whitlow, Harry J.

    1983-05-01

    The angular distribution of material sputtered from a two-component system carries information on concentration gradients close to the target surface. The surface layer will preferentially reduce that part of the flux from deeper layers, which exits from the target at angles far away from the surface normal. If a concentration gradient exists the element being depleted from the very surface will hence be emitted with a more forward-pointed angular distribution than that of the component in which the surface is enriched. An earlier setup for measurements of differential angular distributions has been improved to give higher sensitivity and reproducibility of measurement. The sputtered material is collected on cylindrically mounted thin carbon collectors and analysed with Rutherford backscattering. The setup has been used to investigate surface segregation in sputtered and ion-implanted alloys. Copper targets implanted to saturation with 45 keV Bi + at 77 K are found to have weak copper segregation at the surface. Alloy samples sputtered with argon at energies higher than 20 keV are found to have the weaker-bound component segregated to the surface (Ag from AgAu, Cu from CuPt, Au from Cu 3Au, Pd from Ni 5Pd, and Ni from NiPt) even at 77 K, where thermal segregation is usually prohibited. The segregated component is exactly the one in which the surfaces are usually assumed to be depleted of due to preferential sputtering. Chemical driving forces may be utilized to invert the segregation. For example oxygen will drive Ni to the surface instead of Pd from a Ni 5Pd sample.

  12. Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

    NASA Astrophysics Data System (ADS)

    Akgul, Guvenc; Aksoy Akgul, Funda; Emrah Unalan, Husnu; Turan, Rasit

    2016-04-01

    In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1 0 0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)-voltage (V) measurements under simulated solar irradiation of AM 1.5 G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37 V, 3.30 mA cm-2, 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100 nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.

  13. Improving the efficiency of high-power diode lasers using diamond heat sinks

    SciTech Connect

    Parashchuk, Valentin V; Baranov, V V; Telesh, E V; Mien, Vu Doan; Luc, Vu Van; Truong, Pham Van; Belyaeva, A K

    2010-06-23

    Using multifunctional ion beam and magnetron sputtering systems, we have developed chemical and vacuum techniques for producing metallic coatings firmly adherent to various surfaces, with application to copper and diamond heat sinks for diode lasers. Conditions have been optimised for mounting diode lasers and bars using the proposed metallisation processes, and significant improvements in the output parameters of the devices have been achieved. The power output of cw laser diodes on diamond heat sinks increases by up to a factor of 2, the linear (working) portion of their power-current characteristic becomes markedly broader, and their slope efficiency increases by a factor of 1.5 - 2 relative to that of lasers on copper heat spreaders. The use of diamond heat sinks extends the drive current range of pulsed diode bars by a factor of 2 - 3 and enables them to operate at more than one order of magnitude longer pump pulse durations (up to milliseconds) when the pulse repetition rate is at least 10 Hz. (lasers)

  14. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

    SciTech Connect

    Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua; Jin, Jidong; Du, Lulu; Xin, Qian; Song, Aimin

    2015-08-31

    The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

  15. Diode laser array

    NASA Technical Reports Server (NTRS)

    Carlson, Nils W. (Inventor); Evans, Gary A. (Inventor); Kaiser, Charlie J. (Inventor)

    1990-01-01

    A diode laser array comprises a substrate of a semiconductor material having first and second opposed surfaces. On the first surface is a plurality of spaced gain sections and a separate distributed Bragg reflector passive waveguide at each end of each gain section and optically connecting the gain sections. Each gain section includes a cavity therein wherein charge carriers are generated and recombine to generate light which is confined in the cavity. Also, the cavity, which is preferably a quantum well cavity, provides both a high differential gain and potentially large depth of loss modulation. Each waveguide has a wavelength which is preferably formed by an extension of the cavity of the gain sections and a grating. The grating has a period which provides a selective feedback of light into the gain sections to supporting lasing, which allows some of the light to be emitted from the waveguide normal to the surface of the substrate and which allows optical coupling of the gain sections. Also, the grating period provides an operating wavelength which is on the short wavelength side of the gain period of the gain sections required for laser oscillation. An RF pulse is applied so as to maximize the magnitude of the loss modulation and the differential gain in the gain sections. The array is operated by applying a DC bias to all the gain sections at a level just below the threshold of the gain sections to only one of the gain sections which raises the bias in all of the gain sections to a level that causes all of the gain sections to oscillate. Thus, a small bias can turn the array on and off.

  16. Mounting for diodes provides efficient heat sink

    NASA Technical Reports Server (NTRS)

    1964-01-01

    Efficient heat sink is provided by soldering diodes to metal support bars which are brazed to a ceramic base. Electrical connections between diodes on adjacent bars are made flexible by metal strips which aid in heat dissipation.

  17. Comparison of bipolar and unipolar ionic diodes

    SciTech Connect

    Vlassiouk, Ivan V

    2010-01-01

    Nanoporous ionic diodes, as well as devices for manipulating ions and molecules in a solution, have attracted a great deal of interest from researchers in various fields from the fundamental point of view. Ionic diodes allow the ions to be transported in one direction and block the transport in the other. There are two types of diodes that have been realized experimentally. A bipolar diode contains a junction between two zones of the pore walls with positive and negative surface charges. A unipolar diode contains a zone that is neutral and a zone that is charged. In this paper we discuss differences in operation of the diodes with a special emphasis on the sensitivity of their performance to the lengths of the charged and neutral zones. We also show that a bipolar diode offers more asymmetric current-voltage curves than a unipolar diode.

  18. p-type semiconducting Cu2O-CoO thin films prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Suzuki, Shingo; Miyata, Toshihiro; Minami, Tadatsugu

    2003-07-01

    The preparation by magnetron sputtering of p-type semiconducting thin films consisting of a multicomponent oxide composed of Cu oxide and Co oxide is described. The electrical, optical, and crystallographical properties of films deposited by rf magnetron sputtering using (Cu2O)1-x-(CoO)x powder targets were strongly dependent on not only the deposition condition but also the calcination condition as well as the CoO content of the targets. These properties drastically changed in films prepared with a CoO content around 90 mol %. All prepared films, i.e., CoO content in the range from 0 to 100 mol %, were found to be p type, or positive hole conductors, as evidenced from the Seebeck effect: Resistivities in the range from 103 to 10-3 Ω cm. A hole concentration on the order of 1016 cm-3 and a mobility on the order of 10-1 cm2/V s were obtained in an amorphous multicomponent oxide film prepared with a CoO content of 50 mol %. Fabricated thin-film pin heterojunction diodes consisting of a p-type high-resistance multicomponent oxide combined with undoped ZnO and n-type Al-doped ZnO exhibited a rectifying current-voltage characteristic.

  19. Method of making diode structures

    DOEpatents

    Compaan, Alvin D.; Gupta, Akhlesh

    2006-11-28

    A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.

  20. IC Fabrication Methods Improve Laser Diodes

    NASA Technical Reports Server (NTRS)

    Miller, M.; Pickhardt, V.

    1984-01-01

    Family of high-performance, tunable diode lasers developed for use as local oscillators in passive laser heterodyne spectrometer. Diodes fabricated using standard IC processes include photolithography, selective etching and vacuum deposition of metals and insulators. Packaging refinements improved thermal-cycling characteristics of diodes and increased room-temperature shelf life.

  1. Low Temperature Thermometry Using Inexpensive Silicon Diodes.

    ERIC Educational Resources Information Center

    Waltham, N. R.; And Others

    1981-01-01

    Describes the use of silicon diodes for low temperature thermometry in the teaching laboratory. A simple and inexpensive circuit for display of the diode forward voltage under constant current conditions is described, and its application in the evaluation of low cost silicon diodes as low temperature thermometers is presented. (SK)

  2. Critical currents in sputtered copper molybdenum sulphide

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Woollam, J. A.; Kammerdiner, L.; Luo, H.-L.

    1977-01-01

    Critical currents in a sputtered Chevrel-phase copper molybdenum sulfide have been measured at 4.2 K as a function of applied magnetic field. Self-field critical-current values up to 10 to the 9th A/sq m were found, decreasing to 10 to the 8th A/sq m at 3 T. Graphs of pinning forces versus field were found to be independent of field direction, and the pinning mechanism is sample independent. Critical-current densities for sputtered lead molybdenum sulphide are estimated to be about 10 to the 8th A/sq m at 26 T based on a scaling law for pinning.

  3. Sputter coating of microspherical substrates by levitation

    DOEpatents

    Lowe, A.T.; Hosford, C.D.

    Microspheres are substantially uniformly coated with metals or nonmetals by simltaneously levitating them and sputter coating them at total chamber pressures less than 1 torr. A collimated hole structure comprising a parallel array of upwardly projecting individual gas outlets is machined out to form a dimple. Glass microballoons,, which are particularly useful in laser fusion applications, can be substantially uniformly coated using the coating method and apparatus.

  4. Textured carbon surfaces on copper by sputtering

    NASA Technical Reports Server (NTRS)

    Curren, A. N. (Inventor); Jensen, K. A. (Inventor); Roman, R. F. (Inventor)

    1986-01-01

    A very thin layer of highly textured carbon is applied to a copper surface by a triode sputtering process. A carbon target and a copper substrate are simultaneously exposed to an argon plasma in a vacuum chamber. The resulting carbon surface is characterized by a dense, random array of needle like spires or peaks which extend perpendicularly from the copper surface. The coated copper is especially useful for electrode plates in multistage depressed collectors.

  5. Sputter coating of microspherical substrates by levitation

    DOEpatents

    Lowe, Arthur T.; Hosford, Charles D.

    1981-01-01

    Microspheres are substantially uniformly coated with metals or nonmetals by simultaneously levitating them and sputter coating them at total chamber pressures less than 1 torr. A collimated hole structure 12 comprising a parallel array of upwardly projecting individual gas outlets 16 is machined out to form a dimple 11. Glass microballoons, which are particularly useful in laser fusion applications, can be substantially uniformly coated using the coating method and apparatus.

  6. Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films

    PubMed Central

    2013-01-01

    In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition power of 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZO and NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-ray diffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable in the NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-V characteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunction devices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory. PMID:23634999

  7. Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures

    NASA Astrophysics Data System (ADS)

    Kahraman, Abdullah; Gür, Emre; Aydınlı, Atilla

    2016-08-01

    We report on the correlation of atomic concentration profiles of diffusing species with the blueshift of the quantum well luminescence from both as-grown and impurity free quantum wells intermixed on actual large optical cavity high power laser diode structures. Because it is critical to suppress catastrophic optical mirror damage, sputtered SiO2 and thermally evaporated SrF2 were used both to enhance and suppress quantum well intermixing, respectively, in these (Al)GaAs large optical cavity structures. A luminescence blueshift of 55 nm (130 meV) was obtained for samples with 400 nm thick sputtered SiO2. These layers were used to generate point defects by annealing the samples at 950 °C for 3 min. The ensuing Ga diffusion observed as a shifting front towards the surface at the interface of the GaAs cap and AlGaAs cladding, as well as Al diffusion into the GaAs cap layer, correlates well with the observed luminescence blue shift, as determined by x-ray photoelectron spectroscopy. Although this technique is well-known, the correlation between the photoluminescence peak blue shift and diffusion of Ga and Al during impurity free quantum well intermixing on actual large optical cavity laser diode structures was demonstrated with both x ray photoelectron and photoluminescence spectroscopy, for the first time.

  8. Development of sputtered techniques for thrust chambers

    NASA Technical Reports Server (NTRS)

    Mullaly, J. R.; Hecht, R. J.; Schmid, T. E.; Torrey, C. T.

    1975-01-01

    Techniques and materials were developed and evaluated for the fabrication and coating of advanced, long life, regeneratively cooled thrust chambers. Materials were analyzed as fillers for sputter application of OFHC copper as a closeout layer to channeled inner structures; of the materials evaluated, aluminum was found to provide the highest bond strength and to be the most desirable for chamber fabrication. The structures and properties were investigated of thick sputtered OFHC copper, 0.15 Zr-Cu, Al2O3,-Cu, and SiC-Cu. Layered structures of OFHC copper and 0.15 Zr-Cu were investigated as means of improving chamber inner wall fatigue life. The evaluation of sputtered Ti-5Al-2.5Sn, NASA IIb-11, aluminum and Al2O3-Al alloys as high strength chamber outer jackets was performed. Techniques for refurbishing degraded thrust chambers with OFHC copper and coating thrust chambers with protective ZrO2 and graded ZrO2-copper thermal barrier coatings were developed.

  9. SPUTTERING FROM A POROUS MATERIAL BY PENETRATING IONS

    SciTech Connect

    Rodriguez-Nieva, J. F.; Bringa, E. M.; Cassidy, T. A.; Caro, A.; Loeffler, M. J.; Farkas, D.

    2011-12-10

    Porous materials are ubiquitous in the universe and weathering of porous surfaces plays an important role in the evolution of planetary and interstellar materials. Sputtering of porous solids in particular can influence atmosphere formation, surface reflectivity, and the production of the ambient gas around materials in space. Several previous studies and models have shown a large reduction in the sputtering of a porous solid compared to the sputtering of the non-porous solid. Using molecular dynamics simulations we study the sputtering of a nanoporous solid with 55% of the solid density. We calculate the electronic sputtering induced by a fast, penetrating ion, using a thermal spike representation of the deposited energy. We find that sputtering for this porous solid is, surprisingly, the same as that for a full-density solid, even though the sticking coefficient is high.

  10. GaAs Films Prepared by RF-Magnetron Sputtering

    SciTech Connect

    L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

    2001-08-01

    The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

  11. Sputtering from a Porous Material by Penetrating Ions

    NASA Technical Reports Server (NTRS)

    Rodriguez-Nieva, J. F.; Bringa, E. M.; Cassidy, T. A.; Johnson, R. E.; Caro, A.; Fama, M.; Loeffler, M.; Baragiola, R. A.; Farkas, D.

    2012-01-01

    Porous materials are ubiquitous in the universe and weathering of porous surfaces plays an important role in the evolution of planetary and interstellar materials. Sputtering of porous solids in particular can influence atmosphere formation, surface reflectivity, and the production of the ambient gas around materials in space, Several previous studies and models have shown a large reduction in the sputtering of a porous solid compared to the sputtering of the non-porous solid. Using molecular dynamics simulations we study the sputtering of a nanoporous solid with 55% of the solid density. We calculate the electronic sputtering induced by a fast, penetrating ion, using a thermal spike representation of the deposited energy. We find that sputtering for this porous solid is, surprisingly, the same as that for a full-density solid, even though the sticking coefficient is high.

  12. Mass fractionation of the lunar surface by solar wind sputtering

    NASA Technical Reports Server (NTRS)

    Switkowski, Z. E.; Haff, P. K.; Tombrello, T. A.; Burnett, D. S.

    1975-01-01

    The sputtering of the lunar surface by the solar wind is examined as a possible mechanism of mass fractionation. Simple arguments based on current theories of sputtering and the ballistics of the sputtered atoms suggest that most ejected atoms will have sufficiently high energy to escape lunar gravity. However, the fraction of atoms which falls back to the surface is enriched in the heavier atomic components relative to the lighter ones. This material is incorporated into the heavily radiation-damaged outer surfaces of grains where it is subject to resputtering. Over the course of several hundred years an equilibrium surface layer, enriched in heavier atoms, is found to form. The dependence of the calculated results upon the sputtering rate and on the details of the energy spectrum of sputtered particles is investigated. It is concluded that mass fractionation by solar wind sputtering is likely to be an important phenomenon on the lunar surface.

  13. Bearing endurance tests in vacuum for sputtered molybdenum disulfide films

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1975-01-01

    Angular-contact, 440C stainless steel, ball bearings with sputtered MoS2 films 0.0000006 x 10-7m (6000 A) thick were evaluated in a vacuum bearing chamber (1750 rpm, 137.9-N- (31-lbf-) thrust load) for endurance. Two types of sputtered films were evaluated: (1) MOS2 sputtered directly onto bearing components, and (2) a thin 0.0000001 x 10-7m (1000 A) underlayer of Cr3Si2 subsequently sputtered with MoS2. Bearing test evaluations in vacuum showed that endurance lives of more than 1000 hours (105,000,000 cycles) were obtained with bearings (cage, races, and balls) directly sputtered with MoS2. The same endurance lives were also obtained when only the races and cage were sputtered with an underlayer of Cr3Si2 and subsequently with MoS2.

  14. Sputtering: A vacuum deposition method for coating material

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1972-01-01

    The sputtering process is described in terms of its features: versatility, momentum transfer, configuration of target, precise controls and the relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and internal stresses. The strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched (cleaned) surface, and the submicroscopic particle size. An illustration is a sputtered solid film lubricant such as MoS2. Friction tests were conducted on a thin, 2000 A deg thick MoS2 film. These films are very dense and without observable pinholes, and the particle to particle cohesion is strong. Tolerances (film thickness) can be controlled to a millionth of a centimeter. Very adherent films of sputtered Teflon can be deposited in a single operation on any type of material (metal, glass, paper) and on any geometrical configuration with a dense adherent film.

  15. Pumping of helium and hydrogen by sputter-ion pumps. II. Hydrogen pumping

    SciTech Connect

    Welch, K.M.; Pate, D.J.; Todd, R.J. )

    1994-05-01

    The pumping of helium by various forms of sputter-ion pumps (i.e., SIPs) is given in part I [K. M. Welch, D. J. Pate, and R. J. Todd, J. Vac. Sci. Technol. A [bold 11], 1607 (1993)]. The pumping of hydrogen in diode and triode SIPs is herein discussed. The type of cathode material used in these pumps is shown to have a significant impact on the effectiveness with which hydrogen is pumped. Examples of this include data for pumps with aluminum, titanium, and titanium-alloy cathodes. Diode pumps with aluminum cathodes are shown to be no more effective in the pumping of hydrogen than in the pumping of helium. The use of titanium anodes and titanium [ital shielding] of a pump body is also shown to impact measurably the speed of a pump at very low pressures. This stems from the fact that hydrogen is [times]10[sup 6] more soluble in titanium than in stainless steel. Hydrogen becomes resident in the anodes because of fast neutral burial. Ions and fast neutrals of hydrogen are also buried in the walls of pump bodies. Outgassing of this hydrogen from the anodes and pump bodies results in a gradual increase in pump base pressure and consequential decrease in hydrogen pump speed at very low base pressures.

  16. Diode-pumped laser research

    NASA Technical Reports Server (NTRS)

    Ramos-Izquierdo, L.; Bufton, J. L.; Chan, K.

    1988-01-01

    The Laboratory for Oceans is currently working on the development of compact laser diode array (LD) pumped Nd:YAG lasers for use in space-based altimetry and ranging. Laser diode-array pumping technology promises to increase the electrical to optical efficiency of solid state lasers by an order of magnitude with a lifetime increase of nearly three orders of magnitude relative to today's conventional flashlamp-pumped laser systems. The small size, efficiency, and ruggedness make LD-pumped solid state lasers ideal for space based applications. In an in-house RTOP effort, a novel multiple-pass LD-pumped Nd:YAG laser amplifier was designed and tested to increase the 100 microjoule output pulse energy of the Lightwave laser oscillator. Preliminary results have yielded a round trip amplifier gain of about 15 percent using 7 microjoule LD-pump energy. As a parallel activity, funding was recently obtained to investigate the possible use of custom made fiber optic arrays to obtain an efficient optical coupling mechanism between the emitting laser diode-arrays and the target solid state laser material. Fiber optic coupling arrays would allow for the easy manipulation of the spatial emitting pattern of the diode pump sources to match either an end or side pumping laser configuration.

  17. Characterization of Stock Blu-ray diodes

    NASA Astrophysics Data System (ADS)

    Cunningham, Mark; Archibald, James; Erickson, Christopher; Durfee, Dallin

    2010-10-01

    I am developing a process to test and characterize diodes of unknown wavelengths. using a B&WTEK Spectrometer we are characterizing the wavelength of 405 nm blu-ray diodes purchased in bulk. With the known error in production of the Diode Lasers we are hoping to find a diode at 408 nm to use in driving a raman transition between hyperfine states of strontium 87 ions. The bulk of the project is a java program that communicates with the spectrometer and graphically displays the intensities of the wavelengths from the laser diodes.

  18. Varactor-diode modulator yields conversion gain

    NASA Astrophysics Data System (ADS)

    Breitkopf, K.

    1980-05-01

    It is shown that varactor diodes used as modulator elements can make a balanced diode mixer yield conversion gain when employed in an upconverter. Replacing the normal mixer diodes with varactor diodes and inserting the IF and LO voltages at a level that drives the diodes into their nonlinear voltage-capacitance region produces a parametric amplifying effect. This modification results in conversion gain rather than loss, and brings the desired output power up to the 0.1-1.0 W level. The use of this technique in a lower-sideband UHF TV upconverter is considered.

  19. Ambient-Temperature Sputtering Of Composite Oxide Films

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita

    1992-01-01

    Technique for deposition of homogeneous films of multicomponent oxides on substrates at ambient temperature based on sequential sputter deposition of individual metal components, as alternating ultra-thin layers, from multiple targets. Substrates rotated over sputtering targets of lead, zirconium, and titanium. Dc-magnetron sputtering of constituent metals in reactive ambient of argon and oxygen leads to formation of the respective metal oxides intermixed on extremely fine scale in desired composition. Compatible with low-temperature microelectronic processing.

  20. Linear stability analysis of the Vlasov-Poisson equations in high density plasmas in the presence of crossed fields and density gradients

    NASA Technical Reports Server (NTRS)

    Kaup, D. J.; Hansen, P. J.; Choudhury, S. Roy; Thomas, Gary E.

    1986-01-01

    The equations for the single-particle orbits in a nonneutral high density plasma in the presence of inhomogeneous crossed fields are obtained. Using these orbits, the linearized Vlasov equation is solved as an expansion in the orbital radii in the presence of inhomogeneities and density gradients. A model distribution function is introduced whose cold-fluid limit is exactly the same as that used in many previous studies of the cold-fluid equations. This model function is used to reduce the linearized Vlasov-Poisson equations to a second-order ordinary differential equation for the linearized electrostatic potential whose eigenvalue is the perturbation frequency.

  1. Low energy sputtering of cobalt by cesium ions

    NASA Technical Reports Server (NTRS)

    Handoo, A.; Ray, Pradosh K.

    1989-01-01

    An experimental facility to investigate low energy (less than 500 eV) sputtering of metal surfaces with ions produced by an ion gun is described. Results are reported on the sputtering yield of cobalt by cesium ions in the 100 to 500 eV energy range at a pressure of 1 times 10(exp -6) Torr. The target was electroplated on a copper substrate. The sputtered atoms were collected on a cobalt foil surrounding the target. Co-57 was used as a tracer to determine the sputtering yield.

  2. Quantitative analysis of sputter processes in a small magnetron system

    SciTech Connect

    Knittel, Ivo; Gothe, Marc; Hartmann, Uwe

    2005-11-15

    Sputter deposition of titanium in argon from a small circular magnetron is characterized. The dependence of the deposition rate on pressure, power, and target-substrate distance has been measured. A framework for the application of the analytic approach by Keller and Simmons of ballistic and diffusive transport to simple three-dimensional sputter geometries is developed and applied. The sputter yield and the pressure-distance product are determined from the data set as the only fit parameters of the model. For the entire range of operation of the magnetron, the sputter process can be described in terms of the relatively simple approach.

  3. Sputter shadowing improved by using a tungsten target.

    PubMed

    Colquhoun, W R; Cassimeris, L U

    1985-05-01

    This work builds upon a previous paper (W. Colquhoun, 1984, J. Ultrastruct. Res. 87, 97) in which a sputter shadowing device was briefly described. The device allowed TEM specimens to be shadowed in a conventional sputter coater. Images obtained by sputter shadowing with a standard Au/Pd target were of good quality but were slightly inferior to the best that could be obtained by e--beam evaporation of tungsten. Here we show that construction and use of a tungsten target greatly improves the quality of the sputter shadowed deposit. Images of DNA and ribosomal subunits contrasted by sputter shadowing with tungsten are shown. The DNA images indicate that sputter shadowing with tungsten is a gentle contrasting technique. The sputter shadowed images of the 30 S ribosomal subunits show the major features of the particle revealed by evaporation shadowing using the most sophisticated of methods in that technology. Advantages of sputter shadowing are discussed and a rationale for the improved grain obtained by sputtering tungsten is suggested. PMID:2935642

  4. Energy and mass dependence of isotopic enrichment in sputtering

    SciTech Connect

    Shutthanandan, V.; Zhang, J.; Ray, Pradosh

    2003-05-01

    When a solid surface containing more than one component is bombarded by energetic particles, the sputtered flux is found to deviated from the stoichiometric composition of the target. This is known as preferential sputtering. Usually the sputtered flux is enriched with the lighter-mass particles, particularly at small emission angles. As the bombardment of the target is continued, the target surface becomes depleted in the particles that are preferentially emitted and a steady state is eventually established, where the ratio of the sputtered particles becomes equal to the natural abundance ratio of the particles in the target.

  5. Sputtered germanium/silicon devices for photonics applications

    NASA Astrophysics Data System (ADS)

    Nujhat, N.; Papouloute, J.-P.; DeBerry, M.; Jiang, L.; Korivi, N. S.

    2015-08-01

    We report on the ongoing investigation of magnetron sputtered germanium on silicon for photonics applications. Direct current (DC) magnetron sputtering has been used to deposit germanium layers on silicon at low growth temperatures and medium range vacuum levels. Standard photolithography has been used to make germanium photodetectors for the 1550 nm wavelength range. Electrical characterization, more specifically current-voltage measurements indicate that the devices function as intended. Sputtered silicon waveguides have also been fabricated and evaluated for possible applications in photonics integration. The sputtering-based developments in our present research are expected to provide for a flexible and economically viable manufacturing process for such devices.

  6. Improved adhesion of sputtered refractory carbides to metal substrates

    NASA Technical Reports Server (NTRS)

    Wheeler, D. R.; Brainard, W. A.

    1980-01-01

    Sputtered coatings of the refractory metal carbides are of great interest for applications where hard wear-resistant materials are desired. The usefulness of sputtered refractory carbides is often limited in practice by spalling or interfacial separation. In this work improvements in the adherence of refractory carbides on iron, nickel and titanium base alloys were obtained by using oxidation, reactive sputtering or sputtered interlayers to alter the coating-substrate interfacial region. X-ray photoelectron spectroscopy and argon ion etching were used to characterize the interfacial regions, and an attempt was made to correlate adherence as measured in wear tests with the chemical nature of the interface.

  7. Characteristic diode parameters in thermally annealed Ni/p-InP contacts

    NASA Astrophysics Data System (ADS)

    Turut, A.; Ejderha, K.; Yildirim, N.; Abay, B.

    2016-04-01

    The Ni/p-InP Schottky diodes (SDs) have been prepared by DC magnetron sputtering deposition. After the diode fabrication, they have been thermally annealed at 700 °C for 1 min in N2 atmosphere. Then, the current–voltage characteristics of the annealed and non-annealed (as-deposited) SDs have been measured in the measurement temperature range of 60–400 K with steps of 20 K under dark conditions. After 700 °C annealing, an improvement in the ideality factor value has been observed from 60 to 200 K and the barrier height (BH) value approximately has remained unchanged in the measurement temperature range of 200–400 K. The BH of the annealed diode has decreased obeying the double-Gaussian distribution (GD) of the BHs with decreasing measurement temperature from 200 to 60 K. The BH for the as-deposited diode has decreased with decreasing temperature obeying the single-GD over the whole measurement temperature range. An effective Richardson constant value of 54.21 A/cm2K2 for the as-deposited SD has been obtained from the modified Richardson plot by the single-GD plot, which is in very close agreement with the value of 60 A/K2cm2 for p-type InP. The series resistance value of the annealed SD is lower than that of the non-annealed SD at each temperature and approximately has remained unchanged from 140 to 240 K. Thus, it can be said that an improvement in the diode parameters has been observed due to the thermal annealing at 700 °C for 1 min in N2 atmosphere.

  8. Direct measurements of classical and enhanced gradient-aligned cross-field ion flows in a helicon plasma source using laser-induced fluorescence

    SciTech Connect

    Siddiqui, M. Umair Thompson, Derek S.; McIlvain, Julianne M.; Short, Zachary D.; Scime, Earl E.

    2015-12-15

    Direct laser induced fluorescence measurements are shown of cross-field ion flows normal to an absorbing boundary that is aligned parallel to the axial magnetic field in a helicon plasma. We show Langmuir and emissive probe measurements of local density and plasma potential in the same region, as well as floating probe spectra near the boundary. With these measurements, we investigate the influence of ion-neutral collisionality on radial ion transport by varying the ratio of the ion gyro-radius, ρ{sub i}, to the ion-neutral collision length, λ, over the range 0.34 ≤ ρ{sub i}λ{sup −1} ≤ 1.60. Classical drift-diffusion transport along density and potential gradients is sufficient to describe flow profiles for most cases. For two parameter regimes (ρ{sub i}λ{sup −1} = 0.65 and 0.44), low-frequency electrostatic fluctuations (f < 10 kHz) and enhanced cross-field bulk ion flow to the boundary are observed.

  9. Direct measurements of classical and enhanced gradient-aligned cross-field ion flows in a helicon plasma source using laser-induced fluorescence

    NASA Astrophysics Data System (ADS)

    Siddiqui, M. Umair; Thompson, Derek S.; McIlvain, Julianne M.; Short, Zachary D.; Scime, Earl E.

    2015-12-01

    Direct laser induced fluorescence measurements are shown of cross-field ion flows normal to an absorbing boundary that is aligned parallel to the axial magnetic field in a helicon plasma. We show Langmuir and emissive probe measurements of local density and plasma potential in the same region, as well as floating probe spectra near the boundary. With these measurements, we investigate the influence of ion-neutral collisionality on radial ion transport by varying the ratio of the ion gyro-radius, ρi, to the ion-neutral collision length, λ, over the range 0.34 ≤ ρiλ-1 ≤ 1.60. Classical drift-diffusion transport along density and potential gradients is sufficient to describe flow profiles for most cases. For two parameter regimes (ρiλ-1 = 0.65 and 0.44), low-frequency electrostatic fluctuations (f < 10 kHz) and enhanced cross-field bulk ion flow to the boundary are observed.

  10. System analysis of plasma centrifuges and sputtering

    NASA Technical Reports Server (NTRS)

    Hong, S. H.

    1978-01-01

    System analyses of cylindrical plasma centrifuges are presented, for which the velocity field and electromagnetic fields are calculated. The effects of different electrode geometrics, induced magnetic fields, Hall-effect, and secondary flows are discussed. It is shown that speeds of 10000 m/sec can be achieved in plasma centrifuges, and that an efficient separation of U238 and U235 in uranium plasmas is feasible. The external boundary-value problem for the deposition of sputtering products is reduced to a Fredholm integral equation, which is solved analytically by means of the method of successive approximations.

  11. Sputtered protective coatings for die casting dies

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Nieh, C. Y.; Wallace, J. F.

    1981-01-01

    This investigation determined whether selected ion beam sputtered coatings on H-13 die steel would have the potential of improving the thermal fatigue behavior of the steel used as a die in aluminum die casting. The coatings were selected to test candidate insulators and metals capable of providing protection of the die surface. The studies indicate that 1 micrometer thick W and Pt coatings reduced the thermal fatigue more than any other coating tested and are candidates to be used on a die surface to increase die life.

  12. Atomic sputtering in the analytical electron microscope

    SciTech Connect

    Bradley, C.R.; Zaluzec, N.J.

    1988-08-01

    The advent of UHV medium voltage electron microscopes has brought the microanalyst to a regime of operating conditions in which electron beam induced damage can now be introduced to metallic specimens of medium to high atomic number. We report upon calculations of electron beam induced atomic sputtering which will have bearing upon the next generation of medium voltage analytical electron microscopes. The cross-section calculations reported herein have been completed for all solid elements of the periodic table for incident electron energies up to 1.5 MeV. All computer codes needed to duplicate these computations are available through the EMMPDL. 12 refs., 2 figs., 1 tab.

  13. Reactive sputter deposition of boron nitride

    SciTech Connect

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied {minus}300 V dc bias.

  14. Structural transformations in reactively sputtered alumina films

    SciTech Connect

    Nayar, P. Khanna, A.

    2014-04-24

    Thin films of amorphous alumina of thickness ∼350 nm were prepared on silicon wafer by DC cathode reactive sputtering. The effects of thermal annealing on the structural properties were investigated at annealing temperatures of 600°C, 800°C, 1100°C and 1220°C. X-ray diffraction showed that crystallization starts at 800°C and produces δ and θ alumina phases, the latter phase grows with heat treatment and the film was predominantly δ-phase with small amount of a-phase after annealing at 1220°C. AFM studies found that the surface of thin films smoothened upon crystallization.

  15. Thermal conductivity of sputtered amorphous Ge films

    SciTech Connect

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka

    2014-02-15

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids.

  16. Megahertz organic/polymer diodes

    DOEpatents

    Katz, Howard Edan; Sun, Jia; Pal, Nath Bhola

    2012-12-11

    Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

  17. Quantum Noise in Laser Diodes

    NASA Technical Reports Server (NTRS)

    Giacobino, E.; Marin, F.; Bramati, A.; Jost, V.; Poizat, J. Ph.; Roch, J.-F.; Grangier, P.; Zhang, T.-C.

    1996-01-01

    We have investigated the intensity noise of single mode laser diodes, either free-running or using different types of line narrowing techniques at room temperature. We have measured an intensity squeezing of 1.2 dB with grating-extended cavity lasers and 1.4 dB with injection locked lasers (respectively 1.6 dB and 2.3 dB inferred at the laser output). We have observed that the intensity noise of a free-running nominally single mode laser diode results from a cancellation effect between large anti-correlated fluctuations of the main mode and of weak longitudinal side modes. Reducing the side modes by line narrowing techniques results in intensity squeezing.

  18. Sputter epitaxy of heavily doped p+/n+ Ge film on Si(100) by cosputtering with Al/Sb for solar cell application

    NASA Astrophysics Data System (ADS)

    Yeh, Wenchang; Matsumoto, Akihiro; Sugihara, Keisuke

    2015-08-01

    Heavily doped p+ or n+ Ge films were grown on Si substrates by sputter epitaxy. Ge was cosputtered with Al or Sb to add dopant impurities. The maximum carrier densities were 1.0 × 1021 for p-type films and 8.4 × 1019 cm-3 for n-type films. The activation ratio of Sb was 56%. A pn junction diode was fabricated on a Si(100) substrate; it exhibited a good rectifying property with an on/off ratio of 529.

  19. Electromagnetically controlled multiferroic thermal diode

    NASA Astrophysics Data System (ADS)

    Chotorlishvili, L.; Etesami, S. R.; Berakdar, J.; Khomeriki, R.; Ren, Jie

    2015-10-01

    We propose an electromagnetically tunable thermal diode based on a two-phase multiferroic composite. Analytical and full numerical calculations for a prototypical heterojunction composed of iron on barium titanate in the tetragonal phase demonstrate a strong heat rectification effect that can be controlled externally by a moderate electric field. This finding is important for thermally based information processing and sensing and can also be integrated in (spin) electronic circuits for heat management and recycling.

  20. Comparison of the Sputter Rates of Oxide Films Relative to the Sputter Rate of SiO2

    SciTech Connect

    Baer, Donald R.; Engelhard, Mark H.; Lea, Alan S.; Nachimuthu, Ponnusamy; Droubay, Timothy C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, Laxmikant V.; Stickle, William F.; Wallace, Robert; Wright, B. S.

    2010-09-02

    Because of the increasing technological importance of oxide films for a variety of applications, there is a growing interest in knowing the sputter rates for a wide variety of oxides. To support needs of users of the Environmental Molecular Sciences Laboratory (EMSL) User facility as well as our research programs, we have made a series of measurements of the sputter rates for oxide films that have been grown by oxygen plasma assisted molecular beam epitaxy (OPA-MBE), pulsed laser deposition (PLD), Atomic Layer Deposition (ALD), electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison to the sputter rates for thermally grown SiO2, a common sputter rate reference material. The film thicknesses and densities of these films were usually measured using x-ray reflectivity (XRR). These samples were mounted in an x-ray photoelectron spectroscopy (XPS) system or an Auger electron spectrometer for sputtering measurements using argon ion sputtering. Although the primary objective was to determine relative sputter rates at a fixed angle, the measurements were also used to determine: i) the angle dependence of the relative sputter rates; ii) the energy dependence of the relative sputter rates; and iii) the extent of ion beam reduction for the various oxides. Materials examined include: SiO2 (reference films), Al2O3, CeO2, Cr2O3, Fe2O3, HfO2, ITO (In-Sn-oxide) Ta2O5, TiO2 (anatase and rutile) and ZnO. We find that the sputter rates for the oxides can vary up to a factor of two (usually slower) from that observed for SiO2. The ratios of sputter rates to SiO2 appear to be relatively independent of ion beam energy for the range of 1kV to 4 kV and for incident angles of less than 50º. As expected, the ion beam reduction of the oxides varies with the sputter angle. These studies demonstrate that we can usually obtain sputter rate reproducibility better than 5% for similar oxide films.

  1. Improved Reliability of InGaN-Based Light-Emitting Diodes by HfO2 Passivation Layer.

    PubMed

    Park, Seung Hyun; Kim, Yoon Seok; Kim, Tae Hoon; Ryu, Sang Wan

    2016-02-01

    We utilized a passivation layer to improve the leakage current and reliability characteristics of GaN-based light-emitting diodes. The electrical and optical characteristics of the fabricated LEDs were characterized by current-voltage and optical power measurements. The HfO2 passivation layer showed no optical power degradation and suppressed leakage current. The low deposition temper- ature of sputtered HfO2 is responsible for the improved reliability of the LEDs because it suppresses the diffusion of hydrogen plasma into GaN to form harmful Mg-H complexes. PMID:27433667

  2. Application of the solid lubricant molybdenum disulfide by sputtering

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J.; Spalvins, T.

    1968-01-01

    Molybdenum disulfide lubricant film is deposited on two substrates, niobium and nickel-chromium alloys, by means of physical direct-current sputtering. The sputtering system uses a three-electrode /triode/ geometry - a thermionic cathode, an anode, and the target, all enclosed in a vacuum chamber.

  3. The target heating influence on the reactive magnetron sputtering process

    NASA Astrophysics Data System (ADS)

    Bondarenko, A.; Kolomiytsev, A.; Shapovalov, V.

    2016-07-01

    A physicochemical model for the reactive magnetron sputtering of a “hot” target is described in this paper. The system consisting of eight algebraic equations was solved for a tantalum target sputtered in an O2 environment. It was established that the hysteresis effect disappears with the increase of the ion current density.

  4. A new technique for measuring sputtering yields at high energies

    NASA Technical Reports Server (NTRS)

    Qiu, Y.; Griffith, J. E.; Tombrello, T. A.

    1984-01-01

    The use of thin, self-supporting carbon catcher foils allows one to measure sputtering yields in a broad range of materials with high sensitivity. Analyzing the foils with Rutherford forward scattering, sputtered Al, Si and P surface densities down to 5 x 10 to the 13th per sq cm with uncertainties of about 20 percent have been measured.

  5. Electrochromism in sputtered WO{sub 3} thin films

    SciTech Connect

    Batchelor, R.A.; Burdis, M.S.; Siddle, J.R.

    1996-03-01

    There are large variations in the properties of WO{sub 3} sputtered under different conditions and two samples sputtered from an oxide target and reactively sputtered from a metal target were compared in detail. The thin film sputtered from an oxide target was found to color and bleach rapidly in 1 M LiClO{sub 4} in propylene carbonate, while the thin film reactively sputtered from a metal target could be colored deeply, but bleached only slowly. By calculating the rate of change of optical density during cyclic voltammetry, it was possible to directly compare the coloration response with the current/voltage behavior of the electrodes. In both cases at least two lithium insertion reactions appear to occur. The distinction between the two reactions was especially clear in the sample sputtered from a metal target, in which an insertion of high electrochromic efficiency occurred up to Li{sub 0.2}WO{sub 3} and then an insertion of considerably lower electrochromic efficiency up to Li{sub 0.5}WO{sub 3}. Although a small amount of coloration and bleaching continued to occur after switching the reactively sputtered sample to open circuit during the coloration and bleaching cycles; transmission change was largely halted by disconnecting the external current supply. The slow end to the bleach of the reactively sputtered sample corresponded to a reaction of high electrochromic efficiency.

  6. Apparatus for and method of controlling sputter coating

    SciTech Connect

    Boys, R.

    1985-02-19

    The magnetic field of a magnetron sputter coating apparatus is controlled in response to measurements of plasma parameters to control deposition parameters, such as sputter deposition rate and material deposition thickness profile. From time to time the apparatus is standardized to change preset values for parameters of the plasma to manage the deposition parameters.

  7. X-ray Diode Preparation

    SciTech Connect

    Henderson, D J; Good, D E; Hogge, K W; Molina, I; Howe, R A; Lutz, S S; Flores, P A; McGillivray, K D; Skarda, W M; Nelson, D S; Ormond, E S; Cordova, S R

    2011-06-16

    A rod pinch x-ray diode assembly culminates in a coaxial anode cathode arrangement where a small anode rod extends through the aperture of a cathode plate. Shotto- shot repeatability in rod placement, and thus x-ray source spot position, has potential to positively affect radiographic image quality. Thus, how to both control and measure, according to a Cartesian coordinate system, anode rod tip displacement (x, y) (off the beam line-of-sight retical) and also anode rod tip extension (z) (along the line-of-sight center line) become salient issues relative to radiographic image set utility. To address these issues both hardware fabrication and x-ray diode assembly methods were reviewed, and additional controls were introduced. A photogrammetric procedure was developed to quantify anode rod tip position in situ. Computer models and mock-up assemblies with precision fiducials were produced to validate this procedure. Therefore, both anode rod tip displacement and anode rod tip extension parameters were successfully controlled. Rod position was measured and met the required specifications: (1) radial displacement <0.25 mm and (2) axial placement of ±0.25 mm. We demonstrated that precision control and measurement of large scale components is achievable in a pulse power system (i.e., hardware and operations). Correlations with diode performance and radiography are presented.

  8. A single-molecule diode

    PubMed Central

    Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

    2005-01-01

    We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current–voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur–gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current–voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current–voltage characteristics, similar to the phenomena in a semiconductor diode. PMID:15956208

  9. Differential sputter yield measurements using cavity ringdown spectroscopy.

    PubMed

    Surla, Vijay; Yalin, Azer P

    2007-07-01

    The first use of cavity ringdown spectroscopy (CRDS) to measure differential (angular) sputter yield profiles of sputtered particles is reported. Owing to the path-integrated nature of CRDS, inversion techniques are required. Our approach is to scan the optical axis relative to the source of sputtered particles and to measure the spatial profile of the CRDS signals. Modeling is then used to determine the differential sputter yield profile from the measured CRDS spatial profile. Demonstrative measurements are made with a Nd:YAG pumped optical parametric oscillator laser system for 750 eV argon ions normally incident on a molybdenum target. At these conditions we find an under- cosine sputtering distribution characterized by alpha = 0.22 +/- 0.07 in good agreement with past quartz crystal microbalance measurements (alpha = 0.19). PMID:17571136

  10. Sputtering at grazing ion incidence: Influence of adatom islands

    SciTech Connect

    Rosandi, Yudi; Redinger, Alex; Michely, Thomas; Urbassek, Herbert M.

    2010-09-15

    When energetic ions impinge at grazing incidence onto an atomically flat terrace, they will not sputter. However, when adatom islands (containing N atoms) are deposited on the surface, they induce sputtering. We investigate this effect for the specific case of 83 deg. -incident 5 keV Ar ions on a Pt (111) surface by means of molecular-dynamics simulation and experiment. We find that - for constant coverage {Theta} - the sputter yield has a maximum at island sizes of N congruent with 10-20. A detailed picture explaining the decline of the sputter yield toward larger and smaller island sizes is worked out. Our simulation results are compared with dedicated sputtering experiments, in which a coverage of {Theta}=0.09 of Pt adatoms are deposited onto the Pt (111) surface and form islands with a broad distribution around a most probable size of N congruent with 20.

  11. Sputter-deposited fuel cell membranes and electrodes

    NASA Technical Reports Server (NTRS)

    Narayanan, Sekharipuram R. (Inventor); Jeffries-Nakamura, Barbara (Inventor); Chun, William (Inventor); Ruiz, Ron P. (Inventor); Valdez, Thomas I. (Inventor)

    2001-01-01

    A method for preparing a membrane for use in a fuel cell membrane electrode assembly includes the steps of providing an electrolyte membrane, and sputter-depositing a catalyst onto the electrolyte membrane. The sputter-deposited catalyst may be applied to multiple sides of the electrolyte membrane. A method for forming an electrode for use in a fuel cell membrane electrode assembly includes the steps of obtaining a catalyst, obtaining a backing, and sputter-depositing the catalyst onto the backing. The membranes and electrodes are useful for assembling fuel cells that include an anode electrode, a cathode electrode, a fuel supply, and an electrolyte membrane, wherein the electrolyte membrane includes a sputter-deposited catalyst, and the sputter-deposited catalyst is effective for sustaining a voltage across a membrane electrode assembly in the fuel cell.

  12. Monte Carlo simulations of nanoscale focused neon ion beam sputtering.

    PubMed

    Timilsina, Rajendra; Rack, Philip D

    2013-12-13

    A Monte Carlo simulation is developed to model the physical sputtering of aluminum and tungsten emulating nanoscale focused helium and neon ion beam etching from the gas field ion microscope. Neon beams with different beam energies (0.5-30 keV) and a constant beam diameter (Gaussian with full-width-at-half-maximum of 1 nm) were simulated to elucidate the nanostructure evolution during the physical sputtering of nanoscale high aspect ratio features. The aspect ratio and sputter yield vary with the ion species and beam energy for a constant beam diameter and are related to the distribution of the nuclear energy loss. Neon ions have a larger sputter yield than the helium ions due to their larger mass and consequently larger nuclear energy loss relative to helium. Quantitative information such as the sputtering yields, the energy-dependent aspect ratios and resolution-limiting effects are discussed. PMID:24231648

  13. Mixed composition materials suitable for vacuum web sputter coating

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.; Dever, Joyce A.; Bruckner, Eric J.; Walters, Patricia; Hambourger, Paul D.

    1996-01-01

    Ion beam sputter deposition techniques were used to investigate simultaneous sputter etching of two component targets so as to produce mixed composition films. Although sputter deposition has been largely confined to metals and metal oxides, at least one polymeric material, poly-tetra-fluorethylene, has been demonstrated to produce sputtered fragments which repolymerize upon deposition to produce a highly cross-linked fluoropolymer resembling that of the parent target Fluoropolymer-filled silicon dioxide and fluoropolymer-filled aluminum oxide coatings have been deposited by means of ion beam sputter coat deposition resulting in films having material properties suitable for aerospace and commercial applications. The addition of fluoropolymer to silicon dioxide films was found to increase the hydrophobicity of the resulting mixed films; however, adding fluoropolymer to aluminum oxide films resulted in a reduction in hydrophobicity, thought to be caused by aluminum fluoride formation.

  14. Electron-beam activated thermal sputtering of thermoelectric materials.

    SciTech Connect

    Wu, J.; He, J.; Han, M-K.; Sootsman, J. R.; Girard, S.; Arachchige, I. U.; Kanatzidis, M. G.; Dravid, V. P.

    2011-08-01

    Thermoelectricity and Seebeck effect have long been observed and validated in bulk materials. With the development of advanced tools of materials characterization, here we report the first observation of such an effect in the nanometer scale: in situ directional sputtering of several thermoelectric materials inside electron microscopes. The temperature gradient introduced by the electron beam creates a voltage-drop across the samples, which enhances spontaneous sputtering of specimen ions. The sputtering occurs along a preferential direction determined by the direction of the temperature gradient. A large number of nanoparticles form and accumulate away from the beam location as a result. The sputtering and re-crystallization are found to occur at temperatures far below the melting points of bulk materials. The sputtering occurs even when a liquid nitrogen cooling holder is used to keep the overall temperature at -170 C. This unique phenomenon that occurred in the nanometer scale may provide useful clues to understanding the mechanism of thermoelectric effect.

  15. Electron-beam activated thermal sputtering of thermoelectric materials

    SciTech Connect

    Wu Jinsong; Dravid, Vinayak P.; He Jiaqing; Han, Mi-Kyung; Sootsman, Joseph R.; Girard, Steven; Arachchige, Indika U.; Kanatzidis, Mercouri G.

    2011-08-15

    Thermoelectricity and Seebeck effect have long been observed and validated in bulk materials. With the development of advanced tools of materials characterization, here we report the first observation of such an effect in the nanometer scale: in situ directional sputtering of several thermoelectric materials inside electron microscopes. The temperature gradient introduced by the electron beam creates a voltage-drop across the samples, which enhances spontaneous sputtering of specimen ions. The sputtering occurs along a preferential direction determined by the direction of the temperature gradient. A large number of nanoparticles form and accumulate away from the beam location as a result. The sputtering and re-crystallization are found to occur at temperatures far below the melting points of bulk materials. The sputtering occurs even when a liquid nitrogen cooling holder is used to keep the overall temperature at -170 deg. C. This unique phenomenon that occurred in the nanometer scale may provide useful clues to understanding the mechanism of thermoelectric effect.

  16. Lubrication with sputtered MoS2 films.

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1971-01-01

    Sputtered MoS2 films (2000-6500 A) were deposited on highly polished metal surfaces. These films have a low coefficient of friction (0.03-0.04) at speeds of 40-80 rpm and loads of 250-1000 grams. At loads of 250 grams the wear lives are over 0.5 million cycles, but at 1000 gram loads, it decreases to 38,000 cycles. Friction experiments and tensile tests have indicated that sputtered films have a strong adherence to metal surfaces. Electron transmission, diffraction and scanning electron microscopy show that these films have an extremely small particle size, less than 30 A in diameter, and are very dense and free from observable pinholes. The high kinetic energy of these sputtered species, the submicroscopic particle size and the sputter-etched substrate surface is responsible for strong adhesion and cohesion of the sputtered film.

  17. Reactive sputter deposition of metal oxide nanolaminates

    NASA Astrophysics Data System (ADS)

    Rubin Aita, Carolyn

    2008-07-01

    We discuss the reactive sputter deposition of metal oxide nanolaminates on unheated substrates using four archetypical examples: ZrO2 Al2O3, HfO2 Al2O3, ZrO2 Y2O3, and ZrO2 TiO2. The pseudobinary bulk phase diagrams corresponding to these nanolaminates represent three types of interfaces. I. Complete immiscibility (ZrO2 Al2O3 and HfO2 Al2O3). II. Complete miscibility (ZrO2 Y2O3). III. Limited miscibility without a common end-member lattice (ZrO2 TiO2). We found that, although reactive sputter deposition is a far-from-equilibrium process, thermodynamic considerations strongly influence both phase formation within layers and at interfaces. We show that pseudobinary phase diagrams can be used to predict interfacial cation mixing in the nanolaminates. However, size effects must be considered to predict specific structures. In the absence of pseudoepitaxy, size effects play a significant role in determining the nanocrystalline phases that form within a layer (e.g. tetragonal ZrO2, tetragonal HfO2, and orthorhombic HfO2) and at interfaces (e.g. monoclinic (Zr,Ti)O2). These phases are not bulk standard temperature and pressure phases. Their formation is understood in terms of self-assembly into the lowest energy structure in individual critical nuclei.

  18. Thermal conductivities of thin, sputtered optical films

    SciTech Connect

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO{sub 2}/Si{sub 3}N{sub 4}){sup n} and Al(Al{sub 2}O{sub 3}/AIN){sup n}. Sputtered films of more conventional materials like SiO{sub 2}, Al{sub 2}O{sub 3}, Ta{sub 2}O{sub 5}, Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented.

  19. On reactive high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gudmundsson, J. T.

    2016-01-01

    High power impulse magnetron sputtering (HiPIMS) is an ionized physical vapor deposition (IPVD) technique that is particularly promising for reactive sputtering applications. However, there are few issues that have to be resolved before the full potential of this technique can be realized. Here we give an overview of the key experimental findings for the reactive HiPIMS discharge. An increase in the discharge current is commonly observed with increased partial pressure of the reactive gas or decreased repetition pulse frequency. There are somewhat conflicting claims regarding the hysteresis effect in the reactive HiPIMS discharge as some report reduction or elimination of the hysteresis effect while others claim a feedback control is essential. The ion energy distribution of the metal ion and the atomic ion of the reactive gas are similar and extend to very high energies while the ion energy distribution of the working gas and the molecular ion of the reactive gas are similar and are much less energetic.

  20. Thermic diode performance characteristics and design manual

    NASA Technical Reports Server (NTRS)

    Bernard, D. E.; Buckley, S.

    1979-01-01

    Thermic diode solar panels are a passive method of space and hot water heating using the thermosyphon principle. Simplified methods of sizing and performing economic analyses of solar heating systems had until now been limited to passive systems. A mathematical model of the thermic diode including its high level of stratification has been constructed allowing its performance characteristics to be studied. Further analysis resulted in a thermic diode design manual based on the f-chart method.

  1. Schlieren with a laser diode source

    NASA Technical Reports Server (NTRS)

    Burner, A. W.; Franke, J. M.

    1981-01-01

    The use of a laser diode as a light source for a schlieren system designed to study phase objects such as a wind-tunnel flow is explored. A laser diode schlieren photograph and a white light schlieren photograph (zirconium arc source) are presented for comparison. The laser diode has increased sensitivity, compared with light schlieren, without appreciable image degradiation, and is an acceptable source for schlieren flow visualization.

  2. Thermal (Silicon Diode) Data Acquisition Systems

    NASA Technical Reports Server (NTRS)

    Wright, Ernest; Kegley, Jeff

    2008-01-01

    Marshall Space Flight Center s X-ray Cryogenic Facility (XRCF) has been performing cryogenic testing to 20 Kelvin since 1999. Two configurations for acquiring data from silicon diode temperature sensors have been implemented at the facility. The facility's environment is recorded via a data acquisition system capable of reading up to 60 silicon diodes. Test article temperature is recorded by a second data acquisition system capable of reading 150+ silicon diodes. The specifications and architecture of both systems will be presented.

  3. Thermal (Silicon Diode) Data Acquisition System

    NASA Technical Reports Server (NTRS)

    Kegley, Jeffrey

    2008-01-01

    Marshall Space Flight Center's X-ray Calibration Facility (XRCF) has been performing cryogenic testing to 20 Kelvin since 1999. Two configurations for acquiring data from silicon diode temperature sensors have been implemented at the facility. The facility's environment is recorded via a data acquisition system capable of reading up to 60 silicon diodes. Test article temperature is recorded by a second data acquisition system capable of reading 150+ silicon diodes. The specifications and architecture of both systems will be presented.

  4. Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

    NASA Astrophysics Data System (ADS)

    Zhang, Lili; Xu, Xue; Wu, Yuejin

    2013-08-01

    Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N+ and Ar+ ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models.

  5. Physics and applications of laser diode chaos

    NASA Astrophysics Data System (ADS)

    Sciamanna, M.; Shore, K. A.

    2015-03-01

    This Review Article provides an overview of chaos in laser diodes by surveying experimental achievements in the area and explaining the theory behind the phenomenon. The fundamental physics underpinning laser diode chaos and also the opportunities for harnessing it for potential applications are discussed. The availability and ease of operation of laser diodes, in a wide range of configurations, make them a convenient testbed for exploring basic aspects of nonlinear and chaotic dynamics. It also makes them attractive for practical tasks, such as chaos-based secure communications and random number generation. Avenues for future research and development of chaotic laser diodes are also identified.

  6. Effects of radiation on laser diodes.

    SciTech Connect

    Phifer, Carol Celeste

    2004-09-01

    The effects of ionizing and neutron radiation on the characteristics and performance of laser diodes are reviewed, and the formation mechanisms for nonradiative recombination centers, the primary type of radiation damage in laser diodes, are discussed. Additional topics include the detrimental effects of aluminum in the active (lasing) volume, the transient effects of high-dose-rate pulses of ionizing radiation, and a summary of ways to improve the radiation hardness of laser diodes. Radiation effects on laser diodes emitting in the wavelength region around 808 nm are emphasized.

  7. Grating rhomb diode laser power combiner

    NASA Technical Reports Server (NTRS)

    Minott, Peter O.; Abshire, James B.

    1987-01-01

    A compact device for spectrally combining many laser-diode beams into a single multi-wavelength beam has been developed for use in NASA's intersatellite communications programs. The prototype device combines seven 30 milliwatt beams into a single beam with 70 percent efficiency producing an output of approximately 150 milliwatts. All beams are coaxial and can be collimated with a single transmitter optical system. The combining technique is relatively insensitive to drifts in the laser-diode wavelength and provides both increased power output and laser-diode source redundancy. Combination of more than 100 laser-diodes producing an output greater than 5 watts appears feasible with this technique.

  8. Effect of cross-field drifts on flows in the main scrape-off-layer of DIII-D L-mode plasmas

    SciTech Connect

    Groth, M.; Boedo, J.A.; Brooks, N. H.; Isler, R. C.; Leonard, A. W.; Porter, G. D.; Watkins, J. G.; West, W. P.; Bray, Brad D; Fenstermacher, M. E.; Groebner, R.; Moyer, R.A.; Rudakov, D.L.; Yu, J.H.; Zeng, L.

    2009-01-01

    The flow velocities of deuterons and low charge-state carbon ions have been measured simultaneously in the main scrape-off-layer (SOL) in low-density plasmas in DIII-D, and the dependences of these flow fields on the direction of the cross-field drifts (E x B and B x del B) have been investigated. These measurements were taken poloidally localized in the SOL region vertically opposite the divertor X-point. The carbon ion flows do not necessarily match those of the deuterons either in the direction with respect to the magnetic field lines or in magnitude, suggesting that physics effects apart from entrainment play a significant role in the impurity response. In configurations with the ion B x del B drift towards the divertor X-point, the parallel-B deuteron velocities at the plasma crown are high (-20 to -30 km s(-1) in the direction of the high field side (HFS) divertor), while they are nearly zero in configurations with the opposite B x del B drift direction. The flow direction of singly and doubly charged carbon ions is independent of the ion B x del B drift direction, and the ions flow at approximately -5 to -10 km s(-1) towards the HFS divertor. Simulations with the UEDGE code have been carried out to better understand the underlying physics processes. Inclusion of cross-field drifts in the simulations produced divertor solutions for density and temperature that agree significantly better with measured divertor parameters. These simulations do not, however, reproduce the measured flow fields at the crown for the configuration with the ion B x del B drift towards the divertor X-point. The UEDGE code has also been used to understand the influence of pumping at the HFS divertor plate, and a poloidal dependence in the radial transport coefficient.

  9. Effect of Cross-Field Drifts and Core Rotation on Flows in the Main Scrape-Off Layer of DIII-D L-mode Plasmas

    SciTech Connect

    Groth, M; Boedo, J A; Brooks, N H; Isler, R C; Leonard, A W; Porter, G D; Watkins, J G; West, W P; Bray, B D; Fenstermacher, M E; Groebner, R J; Moyer, R A; Rudakov, D L; Yu, J H; Zeng, L

    2008-10-13

    The flow velocities of deuterons and low charge-state carbon ions have been measured simultaneously for the first time at the crown of the main SOL for low-density plasmas in DIII-D. The dependences of the flow fields on the direction of the cross-field drifts (E x B and B x {del}B) and core plasma rotation were investigated. The measurements indicate that the carbon ion flow direction and magnitude along the magnetic field lines are not necessarily determined by the deuteron flow field, but other physics must also play a role. The deuteron velocities at the plasma crown are high (20-30 km/s) in configurations with the ion B x {del}B drift toward the divertor X-point, while nearly zero in configurations with the opposite B x {del}B drift direction. The flow velocities of doubly charged carbon ions are independent of the ion B x {del}B drift direction, and the measurements suggest a stagnation point in the flow field at the crown of the plasma. Both deuteron and carbon ion flow velocities in the SOL were found to be independent of the direction of core plasma rotation. Simulations with the UEDGE code have been carried out to better understand the underlying physics processes. Including the cross-field drifts in the simulations produced divertor solutions that are in significantly closer agreement with the measurements. They do not, however, reproduce the measured flow fields at the crown for the configuration with the ion B x {del}B drift toward the divertor X-point.

  10. Discharge Physics of High Power Impulse Magnetron Sputtering

    SciTech Connect

    Anders, Andre

    2010-10-13

    High power impulse magnetron sputtering (HIPIMS) is pulsed sputtering where the peak power exceeds the time-averaged power by typically two orders of magnitude. The peak power density, averaged over the target area, can reach or exceed 107 W/m2, leading to plasma conditions that make ionization of the sputtered atoms very likely. A brief review of HIPIMS operation is given in a tutorial manner, illustrated by some original data related to the self-sputtering of niobium in argon and krypton. Emphasis is put on the current-voltage-time relationships near the threshold of self-sputtering runaway. The great variety of current pulse shapes delivers clues on the very strong gas rarefaction, self-sputtering runaway conditions, and the stopping of runaway due to the evolution of atom ionization and ion return probabilities as the gas plasma is replaced by metal plasma. The discussions are completed by considering instabilities and the special case of ?gasless? self-sputtering.

  11. Design, Fabrication and Characterization of MIM Diodes and Frequency Selective Thermal Emitters for Solar Energy Harvesting and Detection Devices

    NASA Astrophysics Data System (ADS)

    Sharma, Saumya

    Energy harvesting using rectennas for infrared radiation continues to be a challenge due to the lack of fast switching diodes capable of rectification at THz frequencies. Metal insulator metal diodes which may be used at 30 THz must show adequate nonlinearity for small signal rectification such as 30 mV. In a rectenna assembly, the voltage signal received as an output from a single nanoantenna can be as small as ~30microV. Thus, only a hybrid array of nanoantennas can be sufficient to provide a signal in the ~30mV range for the diode to be able to rectify around 30THz. A metal-insulator-metal diode with highly nonlinear I-V characteristics is required in order for such small signal rectification to be possible. Such diode fabrication was found to be faced with two major fabrication challenges. The first one being the lack of a precisely controlled deposition process to allow a pinhole free insulator deposition less than 3nm in thickness. Another major challenge is the deposition of a top metal contact on the underlying insulating thin film. As a part of this research study, most of the MIM diodes were fabricated using Langmuir Blodgett monolayers deposited on a thin Ni film that was sputter coated on a silicon wafer. UV induced polymerization of the Langmuir Blodgett thin film was used to allow intermolecular crosslinking. A metal top contact was sputtered onto the underlying Langmuir Blodgett film assembly. In addition to material characterization of all the individual films using IR, UV-VIS spectroscopy, electron microscopy and atomic force microscopy, the I-V characteristics, resistance, current density, rectification ratio and responsivity with respect to the bias voltage were also measured for the electrical characterization of these MIM diodes. Further improvement in the diode rectification ratio and responsivity was obtained with Langmuir Blodgett films grown by the use of horizontally oriented organic molecules, due to a smaller tunneling distance that

  12. Comparison of the sputter rates of oxide films relative to the sputter rate of SiO{sub 2}

    SciTech Connect

    Baer, D. R.; Engelhard, M. H.; Lea, A. S.; Nachimuthu, P.; Droubay, T. C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, L. V.; Stickle, W. F.; Wallace, R. M.; Wright, B. S.

    2010-09-15

    There is a growing interest in knowing the sputter rates for a wide variety of oxides because of their increasing technological importance in many different applications. To support the needs of users of the Environmental Molecular Sciences Laboratory, a national scientific user facility, as well as our research programs, the authors made a series of measurements of the sputter rates from oxide films that have been grown by oxygen plasma-assisted molecular beam epitaxy, pulsed laser deposition, atomic layer deposition, electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison with those from thermally grown SiO{sub 2}, a common reference material for sputter rate determination. The film thicknesses and densities for most of these oxide films were measured using x-ray reflectivity. These oxide films were mounted in an x-ray photoelectron or Auger electron spectrometer for sputter rate measurements using argon ion sputtering. Although the primary objective of this work was to determine relative sputter rates at a fixed angle, the measurements also examined (i) the angle dependence of the relative sputter rates, (ii) the energy dependence of the relative sputter rates, and (iii) the extent of ion beam induced reduction for some oxides. Oxide films examined include SiO{sub 2}, Al{sub 2}O{sub 3}, CeO{sub 2}, Cr{sub 2}O{sub 3}, Fe{sub 2}O{sub 3}, HfO{sub 2}, In-Sn oxide, Ta{sub 2}O{sub 5}, TiO{sub 2} (anatase, rutile, and amorphous), and ZnO. The authors found that the sputter rates for the oxides can vary up to a factor of 2 (usually lower) from that observed for SiO{sub 2}. The ratios of sputter rates relative to those of SiO{sub 2} appear to be relatively independent of ion beam energy in the range of 1-4 kV and for incident angles <50 deg. As expected, the extent of ion beam induced reduction of the oxides varies with the sputter angle.

  13. High rate reactive sputtering in an opposed cathode closed-field unbalanced magnetron sputtering system

    NASA Technical Reports Server (NTRS)

    Sproul, William D.; Rudnik, Paul J.; Graham, Michael E.; Rohde, Suzanne L.

    1990-01-01

    Attention is given to an opposed cathode sputtering system constructed with the ability to coat parts with a size up to 15 cm in diameter and 30 cm in length. Initial trials with this system revealed very low substrate bias currents. When the AlNiCo magnets in the two opposed cathodes were arranged in a mirrored configuration, the plasma density at the substrate was low, and the substrate bias current density was less than 1 mA/sq cm. If the magnets were arranged in a closed-field configuration where the field lines from one set of magnets were coupled with the other set, the substrate bias current density was as high as 5.7 mA/sq cm when NdFeB magnets were used. In the closed-field configuration, the substrate bias current density was related to the magnetic field strength between the two cathodes and to the sputtering pressure. Hard well-adhered TiN coatings were reactively sputtered in the opposed cathode system in the closed-field configuration, but the mirrored configuration produced films with poor adhesion because of etching problems and low plasma density at the substrate.

  14. Sputtered protective coatings for die casting dies

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Nieh, C.-Y.; Wallace, J. F.

    1981-01-01

    Three experimental research designs investigating candidate materials and processes involved in protective die surface coating procedures by sputter deposition, using ion beam technologies, are discussed. Various pre-test results show that none of the coatings remained completely intact for 15,000 test cycles. The longest lifetime was observed for coatings such as tungsten, platinum, and molybdenum which reduced thermal fatigue, but exhibited oxidation and suppressed crack initiation only as long as the coating did not fracture. Final test results confirmed earlier findings and coatings with Pt and W proved to be the candidate materials to be used on a die surface to increase die life. In the W-coated specimens, which remained intact on the surface after thermal fatigue testing, no oxidation was found under the coating, although a few cracks formed on the surface where the coating broke down. Further research is planned.

  15. Plasma Induced Sputtered Exosphere of Callisto

    NASA Astrophysics Data System (ADS)

    Pfleger, Martin; Lammer, Helmut; Lindkvist, Jesper; Holmström, Mats; Vorburger, Audrey; Galli, André; Wurz, Peter; Lichtenegger, Herbert; Barabash, Stas

    2014-05-01

    A better understanding of particle release processes from the Gallilean satellites such as Callisto's surface is needed for planned exospheric and remote surface geochemical studies by the particle and plasma instruments of the PEP experiment on board of ESA's JUICE mission. We study the interaction between the Jovian magnetosphere plasma and Callisto's surface with a hybrid model and applied a geochemical surface composition model for the input of the surface sputter release. Then we apply a 3-D exospheric model for studying the feasibility of exospheric measurements. We model energy and ejection angle distributions of the released particles from the surface, with the emission process determining the actual distribution functions. Our model follows the trajectory of each particle by numerical integration until the particle hits Callisto's surface again or escapes from the calculation domain. Using a large set of these trajectories, bulk parameters of the exospheric gas are derived, e.g., particle densities for various species.

  16. Magnetization relaxation in sputtered thin permalloy films

    NASA Astrophysics Data System (ADS)

    Oliveira, R. C.; Rodríguez-Suárez, R. L.; Aguiar, F. M. De; Rezende, S. M.; Fermin, J. R.; Azevedo, A.

    2004-05-01

    In order to understand the underlying phenomena of magnetization damping in metallic thin films, samples of permalloy films were grown by magnetron sputtering, and their 8.6-GHz ferromagnetic resonance linewidth ΔH has been measured as a function of the Permalloy (Py) film thickness t, at room temperature. We made samples of Py(t)/Si(001) and X/Py(t)/X/Si(001), with X=Pd (40Å), and Cr (25Å), with 20Å < t < 200Å. While ΔH scales with t-2 in the bare Py/Si series, it is shown that the damping behavior strongly depends on X in the sandwich samples.

  17. Thermal stability of sputtered iridium oxide films

    SciTech Connect

    Sanjines, R.; Aruchamy, A.; Levy, F. )

    1989-06-01

    Dry and partially hydrated films of IrO/sub 2/ were prepared by reactive sputtering. The authors discuss their thermal stability investigated by means of XPS, x-ray diffraction, and resistivity measurements. Dry films decomposed at about 400{sup 0}C iin air and at 200{sup 0}C in vacuum (10/sup -2/ Pa), whereas partially hydrated films decomposed at 350{sup 0} and 150{sup 0}C, respectively. After electrochemical treatments of the films mounted as electrochromic electrodes in an electrolytic cell, the decomposition occurred at different temperatures. In particular, the bleached state was found to have the relatively low decomposition temperature of about 100{sup 0}C in air.

  18. Sputtered W-N diffusion barriers

    NASA Technical Reports Server (NTRS)

    Kattelus, H. P.; Kolawa, E.; Affolter, K.; Nicolet, M.-A.

    1985-01-01

    The thermal stability of reactively sputtered tungsten-nitrogen alloy thin films is investigated for the application as diffusion barriers in silicon contact metallizations. The composition of W-N barriers is varied over a wide range including pure W. Aluminum, gold, and silver are used as low resistivity overlayers. Metallurgical interactions at temperatures ranging from 500 to 900 C are studied. Incorporating nitrogen into tungsten advantageously stabilizes all three systems. The overall failure takes place rapidly above critical temperatures that depend on both the metal overlayer and the microstructure of the barrier. In some cases, W-N alloys can effectively prevent interdiffusion at temperatures as high as 800 C for 30 min.

  19. Ion Beam Sputtered Coatings of Bioglass

    NASA Technical Reports Server (NTRS)

    Hench, Larry L.; Wilson, J.; Ruzakowski, Patricia Henrietta Anne

    1982-01-01

    The ion beam sputtering technique available at the NASA-Lewis was used to apply coatings of bioglass to ceramic, metallic, and polymeric substrates. Experiments in vivo and in vitro described investigate these coatings. Some degree of substrate masking was obtained in all samples although stability and reactivity equivalent to bulk bioglass was not observed in all coated samples. Some degree of stability was seen in all coated samples that were reacted in vitro. Both metallic and ceramic substrates coated in this manner failed to show significantly improved coatings over those obtained with existing techniques. Implantation of the coated ceramic substrate samples in bone gave no definite bonding as seen with bulk glass; however, partial and patchy bonding was seen. Polymeric substrates in these studies showed promise of success. The coatings applied were sufficient to mask the underlying reactive test surface and tissue adhesion of collagen to bioglass was seen. Hydrophilic, hydrophobic, charged, and uncharged polymeric surfaces were successfully coated.

  20. Tailoring material properties of sputtered beryllium

    SciTech Connect

    McEachern, R.M.

    1999-03-01

    Doped beryllium is a material of considerable interest to both the ICF and the weapons communities, as well as finding application in specialized industrial settings (e.g., x-ray windows and mirrors). Some of these uses require conformal coating of thin films on (possibly) irregularly-shaped surfaces. Physical vapor deposition (PVD) is often used to accomplish this, and sputtering is often the technique of choice. Among its advantages are that the depositing atoms are relatively energetic, leading to more compact films. Moreover, by simply applying a voltage bias to the substrate, ambient noble gas ions will bombard the growing film, which can cause further densification and other modifications to the microstructure. Sputtering is also well suited to the introduction of dopants, even those that are insoluble. Most applications of these novel materials will require fundamental knowledge of their properties. Because so many can be devised, such information is generally unavailable. The objective of the effort has been to systematically study the properties of films produced under different conditions, with an emphasis on surface finish and permeability. They have made extensive use of atomic force microscopy (AFM) and electron microscopy to determine the microstructure of the films, along with composition probes (mainly x-ray fluorescence) to quantify the chemical structure. The studies can be roughly divided into three categories. First, there are those in which the properties of pure or Cu-doped Be films have been investigated, especially on randomly-agitated spherical capsules. Included are studies of the effects of a constant substrate bias ranging from 0 to 120 v and application of an intermittent bias during deposition. Second, there are experiments in which the structure of the depositing films has been modified via the incorporation of dopants, primarily boron. Finally, there have been numerous attempts to characterize the permeability of Be coatings at

  1. Reactively sputtered Ru-Si-O films

    NASA Astrophysics Data System (ADS)

    Gasser, S. M.; Kolawa, E.; Nicolet, M.-A.

    1999-08-01

    Films of Ru-Si-O were synthesized by reactively sputtering a Ru1Si1 target in an Ar/O2 gas mixture. They were characterized in terms of their composition by 2.0 MeV 4He++ backscattering spectrometry, their atomic density by thickness measurements combined with backscattering data, their microstructure by x-ray diffraction and transmission electron microscopy, and their electrical resistivity by four-point-probe measurements. The compositions indicate preferential sputtering with ruthenium enrichment of the films, and a saturation level of oxygen is determined at 67 at. % corresponding to the formation of SiO2 and RuO2. X-ray diffraction spectra reveal an amorphous structure for oxygen-saturated and nanocrystals for unsaturated as-deposited films. The crystallization temperature clearly increases with the oxygen concentration of the films, from 500 °C for oxygen-free films to 1000 °C for oxygen-saturated films, when annealed in vacuum for 30 min. Transmission electron micrographs of as-deposited oxygen-saturated films show few nanocrystals of 1-2 nm in diameter in an otherwise amorphous matrix. The atomic density is roughly 8×1022 atom/cm3 for all compositions. The resistivity of the ternary alloys scales with the terminal phases in the ternary phase diagram and reaches a maximum value when the Ru-SiO2 tie line is crossed near 50 at. % oxygen. The films are stable in vacuum up to thermal stressing at 800 °C for 5 h, and their decomposition starts near 1000 °C.

  2. Self-Injection Locking Of Diode Lasers

    NASA Technical Reports Server (NTRS)

    Hemmati, H.

    1991-01-01

    Simple optical coupling scheme locks array of gain-guided diode lasers into oscillation in single mode and with single-lobed output beam. Selective feedback from thin etalon self-injection-locks array into desired mode. One application of new scheme for pumping of neodymium: yttrium aluminum garnet lasers with diode-laser arrays.

  3. Semiconductor diode with external field modulation

    DOEpatents

    Nasby, Robert D.

    2000-01-01

    A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction characteristics therein by means of a remanent polarization. The invention may be used for the formation of integrated circuit memories for the storage of information.

  4. Demonstrating the Light-Emitting Diode.

    ERIC Educational Resources Information Center

    Johnson, David A.

    1995-01-01

    Describes a simple inexpensive circuit which can be used to quickly demonstrate the basic function and versatility of the solid state diode. Can be used to demonstrate the light-emitting diode (LED) as a light emitter, temperature sensor, light detector with both a linear and logarithmic response, and charge storage device. (JRH)

  5. Development of latent fingerprints using preferential DC sputter deposition.

    PubMed

    Kent, K; Stoilovic, M

    1995-03-21

    It was shown that a DC metal sputtering process with thermalised atoms, preferentially deposits metal onto fingerprint ridges. This method can be successfully used for the development of latent fingerprints. Four target metals were tested--copper, zinc, platinum, and gold--with platinum showing superior results for latent fingerprint development on clear polythene substrates. A comparison of platinum sputtering and cyanoacrylate fuming followed by rhodamine-6G staining, was conducted for 1-year-old fingerprint deposits. Platinum sputtering showed significantly higher sensitivity, and produced better overall results. PMID:7705733

  6. Hydrogenated amorphous silicon deposited by ion-beam sputtering

    NASA Technical Reports Server (NTRS)

    Lowe, V. E.; Henin, N.; Tu, C.-W.; Tavakolian, H.; Sites, J. R.

    1981-01-01

    Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

  7. Sputtering of HOPG under high-dose ion irradiation

    NASA Astrophysics Data System (ADS)

    Borisov, A. M.; Mashkova, E. S.; Nemov, A. S.; Virgiliev, Yu. S.

    2007-03-01

    The dependences of sputtering yield Y of highly oriented pyrolytic graphite under high fluences (1018-1019 ion/cm2) 30 keV N2+ irradiation at ion incidence angles from θ = 0 (normal incidence) to θ = 80° at room temperature (RT) and T = 400 °C have been measured to trace the radiation damage influence on angular behavior of sputtering yield. A difference has been found between angular dependences of sputtering yields at RT, when the irradiation leads to a high degree of disorder, and at temperatures, larger than the temperature Ta responsible for annealing the radiation damage at continuous ion bombardment.

  8. Magnetron sputtered boron films and Ti/B multilayer structures

    SciTech Connect

    Makowiecki, D.M.; Jankowski, A.F.

    1991-03-11

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor 5 deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity 10 from grazing to normal incidence.

  9. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1995-02-14

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

  10. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1993-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  11. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1995-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  12. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1993-04-20

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  13. The new applications of sputtering and ion plating

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1977-01-01

    The potential industrial applications of sputtering and ion plating are strictly governed by the unique features these methods possess. The outstanding features of each method, the resultant coating characteristics and the various sputtering modes and configurations are discussed. New, more complex coatings and deposits can be developed such as graded composition structures (metal-ceramic seals), laminated and dispersion strengthened composites which improve the mechanical properties and high temperature stability. Specific industrial areas where future effort of sputtering and ion plating will concentrate to develop intricate alloy or compound coatings and solve difficult problem areas are discussed.

  14. Porous, High Capacity Coatings for Solid Phase Microextraction by Sputtering.

    PubMed

    Diwan, Anubhav; Singh, Bhupinder; Roychowdhury, Tuhin; Yan, DanDan; Tedone, Laura; Nesterenko, Pavel N; Paull, Brett; Sevy, Eric T; Shellie, Robert A; Kaykhaii, Massoud; Linford, Matthew R

    2016-02-01

    We describe a new process for preparing porous solid phase microextraction (SPME) coatings by the sputtering of silicon onto silica fibers. The microstructure of these coatings is a function of the substrate geometry and mean free path of the silicon atoms, and the coating thickness is controlled by the sputtering time. Sputtered silicon structures on silica fibers were treated with piranha solution (a mixture of concd H2SO4 and 30% H2O2) to increase the concentration of silanol groups on their surfaces, and the nanostructures were silanized with octadecyldimethylmethoxysilane in the gas phase. The attachment of this hydrophobic ligand was confirmed by X-ray photoelectron spectroscopy and contact angle goniometry on model, planar silicon substrates. Sputtered silicon coatings adhered strongly to their surfaces, as they were able to pass the Scotch tape adhesion test. The extraction time and temperature for headspace extraction of mixtures of alkanes and alcohols on the sputtered fibers were optimized (5 min and 40 °C), and the extraction performances of SPME fibers with 1.0 or 2.0 μm of sputtered silicon were compared to those from a commercial 7 μm poly(dimethylsiloxane) (PDMS) fiber. For mixtures of alcohols, aldehydes, amines, and esters, the 2.0 μm sputtered silicon fiber yielded signals that were 3-9, 3-5, 2.5-4.5, and 1.5-2 times higher, respectively, than those of the commercial fiber. For the heavier alkanes (undecane-hexadecane), the 2.0 μm sputtered fiber yielded signals that were approximately 1.0-1.5 times higher than the commercial fiber. The sputtered fibers extracted low molecular weight analytes that were not detectable with the commercial fiber. The selectivity of the sputtered fibers appears to favor analytes that have both a hydrophobic component and hydrogen-bonding capabilities. No detectable carryover between runs was noted for the sputtered fibers. The repeatability (RSD%) for a fiber (n = 3) was less than 10% for all analytes tested

  15. Mass fractionation of the lunar surface by solar wind sputtering

    NASA Technical Reports Server (NTRS)

    Switkowski, Z. E.; Haff, P. K.; Tombrello, T. A.; Burnett, D. S.

    1977-01-01

    An investigation is conducted concerning the mass-fractionation effects produced in connection with the bombardment of the moon by the solar wind. Most of the material ejected by sputtering escapes the moon's gravity, but some returning matter settles back onto the lunar surface. This material, which is somewhat richer in heavier atoms than the starting surface, is incorporated into the heavily radiation-damaged outer surfaces of grains. The investigation indicates that sputtering of the lunar surface by the solar wind will give rise to significant surface heavy atom enrichments if the grain surfaces are allowed to come into sputtering equilibrium.

  16. Whiskers, cones and pyramids created in sputtering by ion bombardment

    NASA Technical Reports Server (NTRS)

    Wehner, G. K.

    1979-01-01

    A thorough study of the role which foreign atoms play in cone formation during sputtering of metals revealed many experimental facts. Two types of cone formation were distinquished, deposit cones and seed cones. Twenty-six combinations of metals for seed cone formation were tested. The sputtering yield variations with composition for combinations which form seed cones were measured. It was demonstrated that whisker growth becomes a common occurrence when low melting point material is sputter deposited on a hot nonsputtered high melting point electrode.

  17. Preparation and characteristics of vanadium oxide thin films by controlling the sputtering voltage

    NASA Astrophysics Data System (ADS)

    Wei, Xiongbang; Li, Shibin; Gou, Jun; Dong, Xiang; Yang, Xiaohui; Li, Weizhi; Wang, Tao; Wu, Zhiming; Jiang, Yadong; Chen, Zhi

    2014-06-01

    Influence of sputtering voltage on the deposition process and characteristics of vanadium oxide thin films prepared by reactive DC magnetron sputtering is investigated. The target surface cleaning is controlled by adjusting the sputtering voltage. During the sputtering process, the sputtering voltage increases faster with larger O2 gas flow rate. The sputtering voltage is easy to be stable with larger sputtering voltage. The measured sputtering voltage is correlated to the ion induced secondary electron emission (ISEE) coefficient of the target material. The ISEE coefficient of the oxidized vanadium target surface is lower than the ISEE coefficient of the vanadium metal. The semiconductor to metal (S-M) phase transition temperature decreases with the sputtering voltage, leading to the lower the corresponding temperature of the maximum temperature coefficient of resistance (TCR). By this way, O/V ratio, R, and TCR of VOx films can be controlled by adjusting the sputtering voltage.

  18. Laser diode package with enhanced cooling

    DOEpatents

    Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

    2012-06-12

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  19. Laser diode package with enhanced cooling

    DOEpatents

    Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

    2012-06-26

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  20. Laser diode package with enhanced cooling

    DOEpatents

    Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  1. Very high brightness diode laser

    NASA Astrophysics Data System (ADS)

    Heinemann, Stefan; Lewis, Ben; Michaelis, Karsten; Schmidt, Torsten

    2012-03-01

    Multiple Single Emitter (MSE) modules allow highest power and highest brightness diode lasers based on standard broad area diodes. 12 single emitters, each rated at 11 W, are stacked in fast axis and with polarization multiplexing 200W are achieved in a fully collimated beam with a beam quality of 7mm*mrad in both axes. Volume Bragg Gratings (VBG) stabilize the wavelength and narrow the linewidth to less than 2nm. Dichroic mirrors are used for dense wavelength multiplexing of 4 channels within 12 nm. 400W are measured from a 0.2 mm fiber, 0.1 NA. Control and drive electronics are integrated into the 200 W platform and represent a basic building block for a variety of applications, such as a flexible turn key system comprising 12 MSE modules. An integrated beam switch directs the light in six 100 μm, or in one 0.2 mm and one 0.1 mm fiber. 800W are measured from the six 0.1 mm fibers and 700W from the 0.2 mm fiber. The technologies can be transferred to other wavelengths to include 793 nm and 1530 nm. Narrow line gratings and optimized spectral combining enable further improvements in spectral brightness and power.

  2. Hermetic diode laser transmitter module

    NASA Astrophysics Data System (ADS)

    Ollila, Jyrki; Kautio, Kari; Vahakangas, Jouko; Hannula, Tapio; Kopola, Harri K.; Oikarinen, Jorma; Sivonen, Matti

    1999-04-01

    In very demanding optoelectronic sensor applications it is necessary to encapsulate semiconductor components hermetically in metal housings to ensure reliable operation of the sensor. In this paper we report on the development work to package a laser diode transmitter module for a time- off-light distance sensor application. The module consists of a lens, laser diode, electronic circuit and optomechanics. Specifications include high acceleration, -40....+75 degree(s)C temperature range, very low gas leakage and mass-production capability. We have applied solder glasses for sealing optical lenses and electrical leads hermetically into a metal case. The lens-metal case sealing has been made by using a special soldering glass preform preserving the optical quality of the lens. The metal housings are finally sealed in an inert atmosphere by welding. The assembly concept to retain excellent optical power and tight optical axis alignment specifications is described. The reliability of the laser modules manufactured has been extensively tested using different aging and environmental test procedures. Sealed packages achieve MIL- 883 standard requirements for gas leakage.

  3. Broadband light-emitting diode

    DOEpatents

    Fritz, I.J.; Klem, J.F.; Hafich, M.J.

    1998-07-14

    A broadband light-emitting diode is disclosed. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3--2 {micro}m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-divisionmultiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft. 10 figs.

  4. Broadband light-emitting diode

    DOEpatents

    Fritz, Ian J.; Klem, John F.; Hafich, Michael J.

    1998-01-01

    A broadband light-emitting diode. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3-2 .mu.m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-division-multiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft.

  5. Sixty GHz IMPATT diode development

    NASA Technical Reports Server (NTRS)

    Ma, Y. E.; Chen, J.; Benko, E.; Barger, M. J.; Nghiem, H.; Trinh, T. Q.; Kung, J.

    1985-01-01

    The objective of this program is to develop 60 GHz GaAs IMPATT Diodes suitable for communications applications. The performance goal of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10 year life time. During the course of the program, double drift (DD) GaAs IMPATT Diodes have been developed resulting in the state of the art performance at V band frequencies. A CW output power of 1.12 W was demonstrated at 51.9 GHz with 9.7 percent efficiency. The best conversion efficiency achieved was 15.3 percent. V band DD GaAs IMPATTs were developed using both small signal and large signal analyses. GaAs wafers of DD flat, DD hybrid, and DD Read profiles using molecular beam epitaxy (MBE) were developed with excellent doping profile control. Wafer evaluation was routinely made by the capacitance versus voltage (C-V) measurement. Ion mass spectrometry (SIMS) analysis was also used for more detailed profile evaluation.

  6. RF Sputtering for preparing substantially pure amorphous silicon monohydride

    DOEpatents

    Jeffrey, Frank R.; Shanks, Howard R.

    1982-10-12

    A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

  7. Microstructural and wear properties of sputtered carbides and silicides

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1977-01-01

    Sputtered Cr3C2, Cr3Si2, and MoSi2 wear-resistant films (0.05 to 3.5 microns thick) were deposited on metal and glass surfaces. Electron transmission, electron diffraction, and scanning electron microscopy were used to determine the microstructural appearance. Strong adherence was obtained with these sputtered films. Internal stresses and defect crystallographic growth structures of various configurations within the film have progressively more undesirable effects for film thicknesses greater than 1.5 microns. Sliding contact and rolling element bearing tests were performed with these sputtered films. Bearings sputtered with a duplex coating (0.1-micron-thick undercoating of Cr3Si2 and subsequently 0.6-micron coating of MoS2) produced marked improvement over straight MoS2 films.

  8. The first laboratory measurements of sulfur ions sputtering water ice

    NASA Astrophysics Data System (ADS)

    Galli, André; Pommerol, Antoine; Vorburger, Audrey; Wurz, Peter; Tulej, Marek; Scheer, Jürgen; Thomas, Nicolas; Wieser, Martin; Barabash, Stas

    2015-04-01

    The upcoming JUpiter ICy moons Explorer mission to Europa, Ganymede, and Callisto has renewed the interest in the interaction of plasma with an icy surface. In particular, the surface release processes on which exosphere models of icy moons rely should be tested with realistic laboratory experiments. We therefore use an existing laboratory facility for space hardware calibration in vacuum to measure the sputtering of water ice due to hydrogen, oxygen, and sulfur ions at energies from 1 keV to 100 keV. Pressure and temperature are comparable to surface conditions encountered on Jupiter's icy moons. The sputter target is a 1cm deep layer of porous, salty water ice. Our results confirm theoretical predictions that the sputter yield from oxygen and sulfur ions should be similar. Thanks to the modular set-up of our experiment we can add further surface processes relevant for icy moons, such as electron sputtering, sublimation, and photodesorption due to UV light.

  9. The corrosivity and passivity of sputtered Mg-Ti alloys

    SciTech Connect

    Song, Guang -Ling; Unocic, Kinga A.; Meyer, III, Harry M.; Cakmak, Ercan; Brady, Michael P.; Gannon, Paul E.; Himmer, Phil; Andrews, Quinn

    2015-11-30

    Our study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. Moreover, the surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide film was formed on a sputtered Ti–Mg based alloy.

  10. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  11. Development of RF sputtered chromium oxide coating for wear application

    NASA Technical Reports Server (NTRS)

    Bhushan, B.

    1979-01-01

    The radio frequency sputtering technique was used to deposite a hard refractory, chromium oxide coating on an Inconel X-750 foil 0.1 mm thick. Optimized sputtering parameters for a smooth and adherent coating were found to be as follows: target-to-substrate spacing, 41.3 mm; argon pressure, 5-10 mTorr; total power to the sputtering module, 400 W (voltage at the target, 1600 V), and a water-cooled substrate. The coating on the annealed foil was more adherent than that on the heat-treated foil. Substrate biasing during the sputter deposition of Cr2O3 adversely affected adherence by removing naturally occurring interfacial oxide layers. The deposited coatings were amorphous and oxygen deficient. Since amorphous materials are extremely hard, the structure was considered to be desirable.

  12. Factors determining the efficiency of magnetron sputtering. Optimization criteria

    NASA Astrophysics Data System (ADS)

    Rogov, A. V.; Kapustin, Yu. V.; Martynenko, Yu. V.

    2015-02-01

    We report on the results of experimental study of the dependence of sputtering energy efficiency K w in a dc planar magnetron sputtering setup on the discharge power, working gas pressure, magnetic field, cathode erosion depth, and the structure of the gas puffing system and anode. We propose that this parameter be used for comparing the degree of perfection of the magnetron design irrespective of the magnetron size and structural features. The results of measurements of K w in sputtering of Al, Ti, Cr, Cu, Zn, Zr, Nb, Mo, Ag, In, Sn, Ta, W, Pt, and Au are considered. The optimization criterion is worked out for the magnetic system of the magnetron, which ensures the minimal working pressure and the maximal sputtering rate for the cathode. The results are analyzed theoretically.

  13. The corrosivity and passivity of sputtered Mg-Ti alloys

    DOE PAGESBeta

    Song, Guang -Ling; Unocic, Kinga A.; Meyer, III, Harry M.; Cakmak, Ercan; Brady, Michael P.; Gannon, Paul E.; Himmer, Phil; Andrews, Quinn

    2015-11-30

    Our study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. Moreover, the surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide filmmore » was formed on a sputtered Ti–Mg based alloy.« less

  14. Sputtering of Au induced by single Xe ion impacts

    SciTech Connect

    Birtcher, R. C.; Donnelly, S. E.

    1999-12-06

    Sputtering of Au thin films has been determined for Xe ions with energies between 50 and 600 keV. In-situ transmission electron microscopy was used to observe sputtered Au during deposition on a carbon foil near the specimen. Total reflection and transmission sputtering yields for a 62 nm thick Au thin film were determined by ex-situ measurement of the total amount of Au on the carbon foils. In situ observations show that individual Xe ions eject Au nanoparticles as large as 7 nm in diameter with an average diameter of approximately 3 nm. Particle emission correlates with crater formation due to single ion impacts. Nanoparticle emission contributes significantly to the total sputtering yield for Xe ions in this energy range in either reflection or transmission geometry.

  15. Sputter deposition of metallic thin film and directpatterning

    SciTech Connect

    Ji, L.; Chen, Y.; Jiang, X.; Ji, Q.; Leung, K.-N.

    2005-09-09

    A compact apparatus is developed for deposition of metal thin film. The system employs an RF discharge plasma source with a straight RF antenna, which is made of or covered with deposition material, serving as sputtering target at the same time. The average deposition rate of copper thin film is as high as 450nm/min. By properly allocating the metal materials on the sputtering antenna, mixture deposition of multiple metal species is achieved. Using an ion beam imprinting scheme also taking advantage of ion beam focusing technique, two different schemes of direct patterning deposition process are developed: direct depositing patterned metallic thin film and resistless ion beam sputter patterning. Preliminary experiments have demonstrated direct pattern transfer from a template with feature size of micro scale; patterns with more than 10x reduction are achieved by sputtering patterning method.

  16. Sputtering studies during lanthanum implantation in stainless steels

    NASA Astrophysics Data System (ADS)

    Ager, F. J.; Respaldiza, M. A.; Soares, J. C.; da Silva, M. F.; Odriozola, J. A.

    1997-05-01

    Lanthanum ions of 100 keV have been implanted in AISI304 specimens at different doses. The erosion or sputtering of the surface atoms, either from the steel matrix or already implanted, during the implantation process imposes a limitation on the maximum implantable dose. Hoping to increase this dose, we deposited thin layers of aluminium and alumina (Al 2O 3) on top of steel samples of similar composition and sputtering behaviour (AISI302), as the sputtering effect is much weaker on such species and this layer could also prevent the steel atoms from being removed from the surface. The experimental determination of the sputtering coefficients, total or partial, and its comparison with theoretical values, when possible, is another aim of this work.

  17. Magnetospheric ion sputtering and water ice grain size at Europa

    NASA Astrophysics Data System (ADS)

    Cassidy, T. A.; Paranicas, C. P.; Shirley, J. H.; Dalton, J. B., III; Teolis, B. D.; Johnson, R. E.; Kamp, L.; Hendrix, A. R.

    2013-03-01

    We present the first calculation of Europa's sputtering (ion erosion) rate as a function of position on Europa's surface. We find a global sputtering rate of 2×1027 H2O s-1, some of which leaves the surface in the form of O2 and H2. The calculated O2 production rate is 1×1026 O2 s-1, H2 production is twice that value. The total sputtering rate (including all species) peaks at the trailing hemisphere apex and decreases to about 1/3rd of the peak value at the leading hemisphere apex. O2 and H2 sputtering, by contrast, is confined almost entirely to the trailing hemisphere. Most sputtering is done by energetic sulfur ions (100s of keV to MeV), but most of the O2 and H2 production is done by cold oxygen ions (temperature ∼ 100 eV, total energy ∼ 500 eV). As a part of the sputtering rate calculation we compared experimental sputtering yields with analytic estimates. We found that the experimental data are well approximated by the expressions of Famá et al. for ions with energies less than 100 keV (Famá, M., Shi, J., Baragiola, R.A., 2008. Sputtering of ice by low-energy ions. Surf. Sci. 602, 156-161), while the expressions from Johnson et al. fit the data best at higher energies (Johnson, R.E., Burger, M.H., Cassidy, T.A., Leblanc, F., Marconi, M., Smyth, W.H., 2009. Composition and Detection of Europa's Sputter-Induced Atmosphere, in: Pappalardo, R.T., McKinnon, W.B., Khurana, K.K. (Eds.), Europa. University of Arizona Press, Tucson.). We compare the calculated sputtering rate with estimates of water ice regolith grain size as estimated from Galileo Near-Infrared Mapping Spectrometer (NIMS) data, and find that they are strongly correlated as previously suggested by Clark et al. (Clark, R.N., Fanale, F.P., Zent, A.P., 1983. Frost grain size metamorphism: Implications for remote sensing of planetary surfaces. Icarus 56, 233-245.). The mechanism responsible for the sputtering rate/grain size link is uncertain. We also report a surface composition estimate using

  18. Multilayer Badges Indicate Depths Of Ion Sputter Etches

    NASA Technical Reports Server (NTRS)

    Beattie, J. R.; Matossian, J. N.; Garvin, H. L.

    1994-01-01

    Multilayer badges devised to provide rapid, in-place indications of ion sputter etch rates. Badges conceived for use in estimating ion erosion of molybdenum electrodes used in inert-gas ion thrustors. Concept adapted to measure ion erosion in industrial sputter etching processes used for manufacturing of magnetic, electronic, and optical devices. Badge etched when bombarded by energetic ions. Badge layers exposed using mask. Contrast between layers facilitates counting of layers to determine etch depth.

  19. Surface instability of binary compounds caused by sputter yield amplification

    SciTech Connect

    Mark Bradley, R.

    2012-06-01

    It is demonstrated that the flat surface of a binary material that is subjected to normal-incidence ion bombardment can be unstable even if the curvature dependence of the sputter yields is negligibly small. This unforeseen instability is brought about by sputter yield amplification, and it results in the formation of a disordered array of nanodots with the lighter of the two atomic species concentrated at the peaks of the dots.

  20. Sputtering of oxygen ice by low energy ions

    NASA Astrophysics Data System (ADS)

    Muntean, E. A.; Lacerda, P.; Field, T. A.; Fitzsimmons, A.; Hunniford, C. A.; McCullough, R. W.

    2015-11-01

    Naturally occurring ices lie on both interstellar dust grains and on celestial objects, such as those in the outer Solar system. These ices are continuously subjected to irradiation by ions from the solar wind and/or cosmic rays, which modify their surfaces. As a result, new molecular species may form which can be sputtered off into space or planetary atmospheres. We determined the experimental values of sputtering yields for irradiation of oxygen ice at 10 K by singly (He+, C+, N+, O+ and Ar+) and doubly (C2 +, N2 + and O2 +) charged ions with 4 keV kinetic energy. In these laboratory experiments, oxygen ice was deposited and irradiated by ions in an ultra high vacuum chamber at low temperature to simulate the environment of space. The number of molecules removed by sputtering was observed by measurement of the ice thickness using laser interferometry. Preliminary mass spectra were taken of sputtered species and of molecules formed in the ice by temperature programmed desorption (TPD). We find that the experimental sputtering yields increase approximately linearly with the projectile ion mass (or momentum squared) for all ions studied. No difference was found between the sputtering yields for singly and doubly charged ions of the same atom within the experimental uncertainty, as expected for a process dominated by momentum transfer. The experimental sputter yields are in good agreement with values calculated using a theoretical model except in the case of oxygen ions. Preliminary studies have shown molecular oxygen as the dominant species sputtered and TPD measurements indicate ozone formation.

  1. Dust Particle Growth in a Sputtering Discharge with Krypton

    SciTech Connect

    Tawidian, H.; Mikikian, M.; Lecas, T.; Boufendi, L.

    2011-11-29

    Dust particles are grown in the PKE chamber by sputtering materials. The sputtering efficiency and the gas phase reactions can be affected by the gas type and particularly by the ion mass. Due to the presence of growing dust particles, the huge loss of electrons can trigger many instabilities in the plasma. These instabilities, the growth kinetics and the structure of the dust cloud, are compared by using two different gases: argon and krypton.

  2. Sputtering of CaF2 Thin Films

    NASA Astrophysics Data System (ADS)

    Pandey, Ratnesh K.; Khan, Saif A.; Avasthi, D. K.; Pandey, Avinash C.

    2011-07-01

    In the present work CaF2 thin films of different thicknesses deposited on Si substrate have been irradiated with 120 MeV Ag ions with equilibrium charge state and electronic sputtering yield as well as emission of smaller particles/nanoclusters has been studied through Elastic Recoil Detection Analysis (ERDA) and Transmission Electron Microscopy (TEM) respectively. The observed results show maximum sputtering yield at smallest thickness and also nanostructure formation for that thickness has been observed through TEM.

  3. Stress reduction in ion beam sputtered mixed oxide films.

    PubMed

    Pond, B J; Debar, J I; Carniglia, C K; Raj, T

    1989-07-15

    Thin films deposited by ion beam sputtering typically have a high compressive stress. This paper demonstrates that this stress can be reduced by cosputtering two materials. Thin film mixtures of zirconia (ZrO(2)) and silica (SiO(2)) were prepared with a range of compositions using ion beam sputtering. The refractive index was found to vary almost linearly with composition. The large stress observed in zirconia films was found to be reduced significantly by the addition of silica. PMID:20555602

  4. Stress reduction in ion beam sputtered mixed oxide films

    SciTech Connect

    Pond, B. J.; DeBar, J. I.; Carniglia, C. K.; Raj, T.

    1989-07-15

    Thin films deposited by ion beam sputtering typically have a high compressive stress. This paper demonstrates that this stress can be reduced by cosputtering two materials. Thin film mixtures of zirconia (ZrO/sub 2/) and silica (SiO/sub 2/) were prepared with a range of compositions using ion beam sputtering. The refractive index was found to vary almost linearly with composition. The large stress observed in zirconia films was found to be reduced significantly by the addition of silica.

  5. Comparative studies of nonpolar (10-10) ZnO films grown by using atomic layer deposition and radio-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Choi, Nak-Jung; Son, Hyo-Soo; Choi, Hyun-Jun; Kim, Kyoung-Kook; Lee, Sung-Nam

    2014-08-01

    We comparatively investigated the crystal and the optical properties of nonpolar (10-10) ZnO films grown on m-plane sapphire substrates by using atomic layer deposition (ALD) and radio frequency (RF) magnetron sputtering. From high-resolution X-ray ω/2 θ scans, the (100) peak of the ALD-grown ZnO film was clearly developed at ~ 15.9 ° while that of the RF sputter-grown ZnO was broadly observed at 15.6 ~ 15.9 °, indicating that a nonpolar (10-10) ZnO film would be preferentially grown on an m-plane sapphire substrate. The photoluminescence bandedge emission intensity of the ALD-grown (10-10) ZnO film was ten times higher than that of the RF sputtergrown ZnO film. In addition, the electroluminescence intensity of a semipolar (11-22) GaN-based light-emitting diode (LED) with an ALD-grown (10-10) ZnO film as a transparent conductive oxide material was much higher than that of a semipolar (11-22) GaN-based LED with RF sputter-grown (10-10) ZnO film.

  6. Sputtering of ices in the outer solar system

    SciTech Connect

    Johnson, R.E.

    1996-01-01

    Exploration of the outer solar system has led to studies in a new area of physics: electronically induced sputtering of low-temperature, condensed-gas solids (ices). Many of the icy bodies in the outer solar system were found to be bombarded by relatively intense fluxes of ions and electrons, causing both changes in their optical reflectance and ejection (sputtering) of molecules from their surfaces. The small cohesive energies of the condensed-gas solids afford relatively large sputtering rates from the electronic excitations produced in the solid by fast ions and electrons. Such sputtering produces an ambient gas about an icy body, often the source of the local plasma. This colloquium outlines the physics of the sputtering of ices and its relevance to several outer-solar-system phenomena: the sputter-produced plasma trapped in Saturn{close_quote}s magnetosphere; the O{sub 2} atmosphere on Europa; and optical absorption features such as SO{sub 2} in the surface of Europa and O{sub 2} and, possibly, O{sub 3} in the surface of Ganymede. {copyright} {ital 1996 The American Physical Society.}

  7. XPS Study of Plasma- and Argon Ion-Sputtered Polytetrafluoroethylene

    NASA Technical Reports Server (NTRS)

    Golub, Morton A.; Kliss, Mark (Technical Monitor)

    1997-01-01

    The similarity of plasma-polymerized tetrafluoroethylene (PPTFE) and the fluoropolymer film deposited by rf (radio frequency) plasma sputtering (SPTFE) of polytetrafluoroethylene (PTFE), noted earlier in the literature, has been reconfirmed. FT-IR (Fourier Transform Infrared), XPS (X ray Photoelectron Spectroscopy) and UV (ultraviolet) spectroscopy has been employed in apparently the first study to involve preparation of PPTFE and SPTFE in the same reactor and under comparable low-power plasma conditions. Most of the work concerned the use of He or Ar as sputtering gas, but some runs were also carried out with the other rare gases Ne, Kr and Xe. The C1s XPS spectra of SPTFE films displayed a relatively higher content of CF2 groups, and yielded higher F/C (fluorine / carbon) ratios, than PPTFE films, while the SPTFE films were somewhat more transparent in the UV than PPTFE. The F/C ratios for SPTFE were essentially independent of the rare gas used for sputtering. Increasing rf power from 10 to 50 W for Xe plasma-sputtering of PTFE resulted in successively lower F/C ratios (1.55 to 1.21), accompanied by sputtering of the glass reactor occurring at 40 W and above. Some limited XPS, FT-IR and UV data are presented on Ar ion-sputtered PTFE.

  8. Sputtering by the Solar Wind: Effects of Variable Composition

    NASA Technical Reports Server (NTRS)

    Killen, R. M.; Arrell, W. M.; Sarantos, M.; Delory, G. T.

    2011-01-01

    It has long been recognized that solar wind bombardment onto exposed surfaces in the solar system will produce an energetic component to the exospheres about those bodies. Laboratory experiments have shown that there is no increase in the sputtering yield caused by highly charged heavy ions for metallic and for semiconducting surfaces, but the sputter yield can be noticeably increased in the case of a good insulating surface. Recently measurements of the solar wind composition have become available. It is now known that the solar wind composition is highly dependent on the origin of the particular plasma. Using the measured composition of the slow wind, fast wind, solar energetic particle (SEP) population, and coronal mass ejection (CME), broken down into its various components, we have estimated the total sputter yield for each type of solar wind. Whereas many previous calculations of sputtering were limited to the effects of proton bombardment. we show that the heavy ion component. especially the He++ component. can greatly enhance the total sputter yield during times when the heavy ion population is enhanced. We will discuss sputtering of both neutrals and ions.

  9. Optical Properties of Magnetron sputtered Nickel Thin Films

    NASA Astrophysics Data System (ADS)

    Twagirayezu, Fidele; Geerts, Wilhelmus J.; Cui, Yubo

    2015-03-01

    The study of optical properties of Nickel (Ni) is important, given the pivotal role it plays in the semiconductor and nano-electronics technology. Ni films were made by DC and RF magnetron sputtering in an ATC Orion sputtering system of AJA on various substrates. The optical properties were studied ex situ by variable angle spectroscopic (220-1000 nm) ellipsometry at room temperature. The data were modeled and analyzed using the Woollam CompleteEase Software fitting ellipsometric and transmission data. Films sputtered at low pressure have optical properties similar to that of Palik. Films sputtered at higher pressure however have a lower refraction index and extinction coefficient. It is expected from our results that the density of the sputtered films can be determined from the ellipsometric quantities. Our experiments also revealed that Ni is susceptible to a slow oxidation changing its optical properties over the course of several weeks. The optical properties of the native oxide differ from those of reactive sputtered NiO similar as found by. Furthermore the oxidation process of our samples is characterized by at least two different time constants.

  10. Diode lasers: From laboratory to industry

    NASA Astrophysics Data System (ADS)

    Nasim, Hira; Jamil, Yasir

    2014-03-01

    The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

  11. Checker Takes the Guesswork out of Diode Identification

    ERIC Educational Resources Information Center

    Harman, Charles

    2011-01-01

    At technical colleges and secondary-level tech schools, students enrolled in basic electronics labs who have learned about diodes that do rectification are used to seeing power diodes like the 1N4001. When the students are introduced to low-power zener diodes and signal diodes, component identification gets more complex. If the small zeners are…

  12. Ion Diode Experiments on PBFA-X

    NASA Astrophysics Data System (ADS)

    Lockner, Thomas

    1996-05-01

    The PBFA-II pulsed power accelerator at Sandia National Laboratories has been modified to replace the radially focusing ion diode with an extraction ion diode. In the extraction diode mode (PBFA X) the ion beam is generated on the surface of an annular disk and extracted along the cylindrical axis. An additional magnetically insulated transmission line (MITL) has been installed to transmit power from the center to the bottom of the accelerator, where it drives a magnetically insulated extraction ion diode. The modification increases access to the diode and the diagnostics, permitting a higher shot rate, and allows us to study extraction diode technology at a power level near what is required for a high yield facility. The modification also includes reversing the polarity of the top half of the accelerator to permit operation at twice the previous source voltage. In the new configuration the diode could operate at 15 MV and 0.8 MA. This operating point is near the 30 MV, 1.0 MA operating point envisioned for one module of a high yield facility, and will allow the study of intense extraction ion diodes at power levels relevant to such a facility. Experimental results will be presented including MITL coupling studies, beam current density control, discharge cleaning of diode surfaces to reduce the presence of contaminant ions in the source beam, and the effect of anode substrate materials on the purity of the lithium beam. A comparison between predicted and measured radial beam profiles will also be presented, with the predicted profiles obtained from the ATHETA code that solves magnetostatics problems in two dimensions. This work was supported by the US/DOE under contract No. DE-AC04-94AL85000. +In collaboration with R. S. Coats, M. E. Cuneo, M. P. Desjarlias, D. J. Johnson, T. A. Mehlhorn, C. W. Mendel, Jr., P. Menge#, and W. J. Poukey,

  13. Sputtering and heating of Titan's upper atmosphere.

    PubMed

    Johnson, Robert E

    2009-02-28

    Titan is an important endpoint for understanding atmospheric evolution. Prior to Cassini's arrival at Saturn, modelling based on Voyager data indicated that the hydrogen escape rate was large (1-3x1028amus-1), but the escape rates for carbon and nitrogen species were relatively small (5x1026amus-1) and dominated by atmospheric sputtering. Recent analysis of the structure of Titan's thermosphere and corona attained from the Ion and Neutral Mass Spectrometer and the Huygens Atmospheric Structure Instrument on Cassini have led to substantially larger estimates of the loss rate for heavy species (0.3-5x1028amus-1). At the largest rate suggested, a mass that is a significant fraction of the present atmosphere would have been lost to space in 4Gyr; hence, understanding the nature of the processes driving escape is critical. The recent estimates of neutral escape are reviewed here, with particular emphasis on plasma-induced sputtering and heating. Whereas the loss of hydrogen is clearly indicated by the altitude dependence of the H2 density, three different one-dimensional models were used to estimate the heavy-molecule loss rate using the Cassini data for atmospheric density versus altitude. The solar heating rate and the nitrogen density profile versus altitude were used in a fluid dynamic model to extract an average net upward flux below the exobase; the diffusion of methane through nitrogen was described below the exobase using a model that allowed for outward flow; and the coronal structure above the exobase was simulated by presuming that the observed atmospheric structure was due to solar- and plasma-induced hot particle production. In the latter, it was hypothesized that hot recoils from photochemistry or plasma-ion-induced heating were required. In the other two models, the upward flow extracted is driven by heat conduction from below, which is assumed to continue to act above the nominal exobase, producing a process referred to as 'slow hydrodynamic' escape

  14. Broad interband semiconductor laser diodes

    NASA Astrophysics Data System (ADS)

    Tan, Chee Loon

    A semiconductor laser is a diode device that emits light via stimulated emission. Conventionally, light emitted from a semiconductor laser is spatially coherent or narrowband. The fundamental mechanism of stimulated emission process in general leads only to a single wavelength emission. However, there are some lasers emit light with a broad spectrum or different distinct wavelength subjected to various operating conditions such as external grating configuration with semiconductor laser, diode-pumped self-Q-switch fiber laser, ultrashort pulse excitation, photonic crystal fiber, ultrabroadband solid-state lasers, semiconductor optical amplifier-based multiwavelength tunable fiber lasers, nonlinear crystal, broadband semiconductor laser etc. This type of broadband laser is vital in many practical applications such as optical telecommunications, spectroscopy measurement, imaging technology, etc. Recently, an ultra-broadband semiconductor laser that utilizes intersubband optical transitions via quantum cascade configuration has been realized. Laser action with a Fabry-Perot spectrum covering all wavelengths from 6 to 8 microm simultaneously is demonstrated with this approach. More recently, broadband emission results from interband optical transitions via quantum-dot/dash nanostructures have been demonstrated in a simple p-i-n laser diode structure. To date, this latest approach offers the simplest design by proper engineering of quantized energy states as well as utilizing the high inhomogeneity of the dot/dash nanostructures, which is inherent from self-assembled growth technology. In this dissertation, modeling of semiconductor InGaAs/GaAs quantum-dot broadband laser utilizing the properties of inhomogeneous and homogeneous broadening effects on lasing spectral will be discussed, followed by a detail analysis of another type of broad interband semiconductor laser, which is InAs/InGaAlAs quantum-dash broadband laser. Based on the device characterization results

  15. A Portable Diode Array Spectrophotometer.

    PubMed

    Stephenson, David

    2016-05-01

    A cheap portable visible light spectrometer is presented. The spectrometer uses readily sourced items and could be constructed by anyone with a knowledge of electronics. The spectrometer covers the wavelength range 450-725 nm with a resolution better than 5 nm. The spectrometer uses a diffraction grating to separate wavelengths, which are detected using a 128-element diode array, the output of which is analyzed using a microprocessor. The spectrum is displayed on a small liquid crystal display screen and can be saved to a micro SD card for later analysis. Battery life (2 × AAA) is estimated to be 200 hours. The overall dimensions of the unit are 120 × 65 × 60 mm, and it weighs about 200 g. PMID:27036399

  16. Quantum Dot Light Emitting Diode

    SciTech Connect

    Keith Kahen

    2008-07-31

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m2, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  17. Quantum Dot Light Emitting Diode

    SciTech Connect

    Kahen, Keith

    2008-07-31

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m{sup 2}, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  18. Bilayer avalanche spin-diode logic

    SciTech Connect

    Friedman, Joseph S. Querlioz, Damien; Fadel, Eric R.; Wessels, Bruce W.; Sahakian, Alan V.

    2015-11-15

    A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.

  19. Bilayer avalanche spin-diode logic

    NASA Astrophysics Data System (ADS)

    Friedman, Joseph S.; Fadel, Eric R.; Wessels, Bruce W.; Querlioz, Damien; Sahakian, Alan V.

    2015-11-01

    A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.

  20. Diode-pumped CW molecular lasers

    NASA Astrophysics Data System (ADS)

    Wellegehausen, B.; Luhs, W.

    2016-05-01

    First continuous laser oscillation on many lines in the range of 533-635 nm on different transitions of Na2 and Te2 molecules has been obtained, optically pumped with common cw blue emitting InGaN diode lasers operating around 445 and 460 nm. Spectral narrowing of the diode laser is achieved with a beamsplitter and grating setup, allowing use of more than 50 % of the diode power. Operation conditions and properties of the laser systems are presented, and perspectives for the realization of compact low cost molecular lasers are discussed.

  1. Improved Thermoelectrically Cooled Laser-Diode Assemblies

    NASA Technical Reports Server (NTRS)

    Glesne, Thomas R.; Schwemmer, Geary K.; Famiglietti, Joe

    1994-01-01

    Cooling decreases wavelength and increases efficiency and lifetime. Two improved thermoelectrically cooled laser-diode assemblies incorporate commercial laser diodes providing combination of both high wavelength stability and broad wavelength tuning which are broadly tunable, highly stable devices for injection seeding of pulsed, high-power tunable alexandrite lasers used in lidar remote sensing of water vapor at wavelengths in vicinity of 727 nanometers. Provide temperature control needed to take advantage of tunability of commercial AlGaAs laser diodes in present injection-seeding application.

  2. Two-Dimensional (z-θ) Hybrid Fluid-PIC Simulation of Enhanced Cross-field Electron Transport in an Annular ExB Discharge

    NASA Astrophysics Data System (ADS)

    Lam, Cheryl; Fernandez, Eduardo; Cappelli, Mark

    2012-10-01

    We use a numerical model to study quasi-coherent plasma fluctuations and their impact on cross-field electron transport. We consider the case of an annular discharge, subject to a radial magnetic field and an axial electric field. Motivated by experimental evidence of anomalously high electron mobility across the magnetic field in Hall thruster discharges, we choose a two-dimensional axial-azimuthal (z-θ) simulation geometry. The model includes a continuously-replenished heavy (Xe) neutral background, with an imposed radial magnetic field and an applied axial electric potential. We use a hybrid fluid-Particle-In-Cell treatment; the ion and neutral species are treated as collisionless particles, while the electrons are treated as a fluid continuum. Using numerical simulations to resolve the azimuthal electron dynamics, we focus on understanding the role played by fluctuations, particularly those that propagate with components perpendicular to both the applied electric and magnetic fields. Preliminary simulations predict dispersive ``tilted'' wave fluctuations in the plasma density and electron velocities. These fluctuations appear to contribute to an enhanced overall electron mobility, which is significantly higher than that based on classical scattering.

  3. Effect of anomalous electron cross-field transport on electron energy distribution function in a DC-RF magnetized plasma discharge

    NASA Astrophysics Data System (ADS)

    Raitses, Yevgeny; Donnelly, Vincent; Kaganovich, Igor; Godyak, Valery

    2013-09-01

    The application of the magnetic field in a low pressure plasma can cause a spatial separation of cold and hot electron groups. This so-called magnetic filter effect is not well understood and is the subject of our studies. In this work, we investigate electron energy distribution function in a DC-RF plasma discharge with crossed electric and magnetic field operating at sub-mtorr pressure range of xenon gas. Experimental studies showed that the increase of the magnetic field leads to a more uniform profile of the electron temperature across the magnetic field. This surprising result indicates the importance of anomalous electron transport that causes mixing of hot and cold electrons. High-speed imaging and probe measurements revealed a coherent structure rotating in E cross B direction with frequency of a few kHz. Similar to spoke oscillations reported for Hall thrusters, this rotating structure conducts the largest fraction of the cross-field current. This work was supported by the US DOE under Contract DE-AC02-09CH11466.

  4. Effect of anomalous electron cross-field transport on electron energy distribution function in a DC-RF magnetized plasma discharge

    NASA Astrophysics Data System (ADS)

    Raitses, Yevgeny; Donnelly, Vincent M.; Kaganovich, Igor D.; Godyak, Valery

    2013-10-01

    The application of the magnetic field in a low pressure plasma can cause a spatial separation of cold and hot electron groups. This so-called magnetic filter effect is not well understood and is the subject of our studies. In this work, we investigate electron energy distribution function in a DC-RF plasma discharge with crossed electric and magnetic field operating at sub-mtorr pressure range of xenon gas. Experimental studies showed that the increase of the magnetic field leads to a more uniform profile of the electron temperature across the magnetic field. This surprising result indicates the importance of anomalous electron transport that causes mixing of hot and cold electrons. High-speed imaging and probe measurements revealed a coherent structure rotating in E cross B direction with frequency of a few kHz. Similar to spoke oscillations reported for Hall thrusters, this rotating structure conducts the largest fraction of the cross-field current. This work was supported by DOE contract DE-AC02-09CH11466.

  5. Impact of preparation condition of ZnO electron transport layer on performance of hybrid organic-inorganic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Huang, Chun-Yuan; Yang, Chih-Chiang; Yu, Hsin-Chieh; Chen, Ying-Chih

    2014-02-01

    In this article, we have demonstrated the hybrid polymer light-emitting diodes (PLEDs) with a sol-gel derived or rf-sputtered ZnO electron transport layer (ETL). For the ZnO films prepared under different conditions, low annealing temperature (300 °C) leads to the film amorphous while the polycrystalline films is readily achieved by sputtering. Though the surface roughness can be improved by thermal annealing at 400 °C for sputtered films, the release of compressive stress after treatment has shrunk the optical band gap from 3.282 to 3.268 eV. As the ETL in PLEDs, the reduced band gap could increase potential barrier for electron injection and decrease the hole blocking capability. In our cases, luminance larger than 7000 cd/m2 can be obtained in device with pristine sputtered ZnO ETL. It is concluded that crystalline structure of ZnO films is important to facilitate the balance of carrier mobility to obtain high luminance and high efficiency devices.

  6. Impact of preparation condition of ZnO electron transport layer on performance of hybrid organic-inorganic light-emitting diodes

    SciTech Connect

    Huang, Chun-Yuan; Yang, Chih-Chiang; Yu, Hsin-Chieh; Chen, Ying-Chih

    2014-02-28

    In this article, we have demonstrated the hybrid polymer light-emitting diodes (PLEDs) with a sol-gel derived or rf-sputtered ZnO electron transport layer (ETL). For the ZnO films prepared under different conditions, low annealing temperature (300 °C) leads to the film amorphous while the polycrystalline films is readily achieved by sputtering. Though the surface roughness can be improved by thermal annealing at 400 °C for sputtered films, the release of compressive stress after treatment has shrunk the optical band gap from 3.282 to 3.268 eV. As the ETL in PLEDs, the reduced band gap could increase potential barrier for electron injection and decrease the hole blocking capability. In our cases, luminance larger than 7000 cd/m{sup 2} can be obtained in device with pristine sputtered ZnO ETL. It is concluded that crystalline structure of ZnO films is important to facilitate the balance of carrier mobility to obtain high luminance and high efficiency devices.

  7. Estimates of Sputter Yields of Solar-Wind Heavy Ions of Lunar Regolith Materials

    NASA Technical Reports Server (NTRS)

    Barghouty, Abdulmasser F.; Adams, James H., Jr.

    2008-01-01

    At energies of approximately 1 keV/amu, solar-wind protons and heavy ions interact with the lunar surface materials via a number of microscopic interactions that include sputtering. Solar-wind induced sputtering is a main mechanism by which the composition of the topmost layers of the lunar surface can change, dynamically and preferentially. This work concentrates on sputtering induced by solar-wind heavy ions. Sputtering associated with slow (speeds the electrons speed in its first Bohr orbit) and highly charged ions are known to include both kinetic and potential sputtering. Potential sputtering enjoys some unique characteristics that makes it of special interest to lunar science and exploration. Unlike the yield from kinetic sputtering where simulation and approximation schemes exist, the yield from potential sputtering is not as easy to estimate. This work will present a preliminary numerical scheme designed to estimate potential sputtering yields from reactions relevant to this aspect of solar-wind lunar-surface coupling.

  8. Spectral line-diode registry effects with photodiode array detectors

    SciTech Connect

    Winge, R.K.; Fassel, V.A.; Eckels, D.E.

    1986-05-01

    A limitation of photodiode array detectors for spectroscopic intensity measurements relates to the spacing of the diodes and the errors generated when a spectral line is not in exact registry with the diode or diodes from which its intensity is being measured. These misregistry intensity errors, which may be as high as 25 to 30%, are documented for a range of spectral bandwidths and for single diode (pixel) intensities and multiple diode summations of intensities.

  9. Arbitrary waveform generator to improve laser diode driver performance

    SciTech Connect

    Fulkerson, Jr, Edward Steven

    2015-11-03

    An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

  10. Sputtered coatings for protection of spacecraft polymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Mirtich, M. J.; Rutledge, S. K.; Swec, D. M.

    1983-01-01

    Kapton polyimide oxidizes at significant rates (4.3x10(-24) gram/incident oxygen atom) when exposed in low Earth orbit to the ram atomic oxygen flux. Ion beam sputter deposited thin films of Al2O3 and SiO2 as well as a codeposited mixture of predominantly SiO2 with a small amount of polytetrafluoroethylene were evaluated and found to be effective in protecting Kapton from oxidation in both laboratory plasma ashing tests as well as in space on board shuttle flight STS-8. A protective film of or = 96 percent SiO2 and or = 4 percent polytetrafluoroethylene was found to be very flexible compared to the pure metal oxide coatings and resulted in mass loss rates that were 0.2 percent of that of the unprotected Kapton. The optical properties of Kapton for wavelengths investigated between 0.33 and 2.2 microns were not significantly altered by the presence of the coatings or changed by exposure of the coated Kapton to the low Earth orbital ram environment.

  11. Sputtered Layered Synthetic Microstruture (LSM) Dispersion Elements

    NASA Astrophysics Data System (ADS)

    Barbee, Troy W.

    1981-10-01

    The opportunities offered by engineered synthetic multilayer dispersion elements for x-rays have been recognized since the earliest days of x-ray diffraction analysis. In this paper, application of sputter deposition tehnology to the synthesis of Layered Synthetic Microstructure (LSM's) of sufficient quality or use as x-ray dispersion elements is discussed. It will be shown that high efficiency, controllble bandwidth dispersion elements, with d spacings varying from 15 Å to 180 Å, may be synthesized onto both mechanically stiff and flexible substrtes. Multilayer component materials include tungten, niobium, molybdenum, titanium, vanadium, and silicon layers separated by carbon layers. Experimental observations of peak reflectivity in first order, integrated reflectivity in first order, and diffraction performance at selected photon energies in the range, 100 to 15000 eV, will be reported and compared to theory. Emphasis is placed on results giving information concerning limiting structural characteristics of these LSM's. It will be shown that the observed behavior is in accord with theory, both kinematic and dynamic regimes being clearly observed. In addition, the mosaic spread of these LSM's is not detectable, indicatig that they are perfect structures. A consistent explanation of these experimental results indicates that roughness at the interfaces between constituent layers is the structural characteristic currently limiting diffracting behavior.

  12. Simulation of coupled sputter-diffusion effects

    NASA Astrophysics Data System (ADS)

    von Toussaint, U.; Mutzke, A.; Sugiyama, K.; Schwarz-Selinger, T.

    2016-02-01

    The simultaneous effects of sputtering, implantation and solid-state diffusion determine the surface profiles of mixed-material systems under ion-bombardment at elevated temperatures due to the enhanced atomic mobility. To simulate the joint processes the Monte Carlo code SDTrimSP for the simulation of the ion-solid interaction has been augmented by a diffusion model for solid-state diffusion. The combined model has been applied to a tungsten-iron system under deuterium bombardment as model system for EUROFER. The simulation results reveal a strong dependence of the surface profile on initial tungsten concentration, ion energy, temperature and fluence but also on the impinging flux, a parameter which is often not appropriately taken into account. For reactor relevant parameters of low-energy (200 eV) deuterium fluxes of {10}21{at} {{{m}}}-2 {{{s}}}-1 at 873 K a tungsten-iron system exhibits an increase of the tungsten surface concentration from initially 1% by a factor of more than 20, which drops at lower fluxes.

  13. Annealing of gold nanostructures sputtered on polytetrafluoroethylene

    NASA Astrophysics Data System (ADS)

    Siegel, Jakub; Krajcar, Robert; Kolská, Zdeňka; Hnatowicz, Vladimír; Švorčík, Václav

    2011-11-01

    Gold nanolayers sputtered on polytetrafluoroethylene (PTFE) surface and their changes induced by post-deposition annealing at 100°C to 300°C are studied. Changes in surface morphology and roughness are examined by atomic force microscopy, electrical sheet resistance by two point technique, zeta potential by electrokinetic analysis and chemical composition by X-ray photoelectron spectroscopy (XPS) in dependence on the gold layer thickness. Transition from discontinuous to continuous gold coverage takes place at the layer thicknesses 10 to 15 nm and this threshold remains practically unchanged after the annealing at the temperatures below 200°C. The annealing at 300°C, however, leads to significant rearrangement of the gold layer and the transition threshold increases to 70 nm. Significant carbon contamination and the presence of oxidized structures on gold-coated samples are observed in XPS spectra. Gold coating leads to a decrease in the sample surface roughness. Annealing at 300°C of pristine PTFE and gold-coated PTFE results in significant increase of the sample surface roughness.

  14. Annealing of gold nanostructures sputtered on polytetrafluoroethylene

    PubMed Central

    2011-01-01

    Gold nanolayers sputtered on polytetrafluoroethylene (PTFE) surface and their changes induced by post-deposition annealing at 100°C to 300°C are studied. Changes in surface morphology and roughness are examined by atomic force microscopy, electrical sheet resistance by two point technique, zeta potential by electrokinetic analysis and chemical composition by X-ray photoelectron spectroscopy (XPS) in dependence on the gold layer thickness. Transition from discontinuous to continuous gold coverage takes place at the layer thicknesses 10 to 15 nm and this threshold remains practically unchanged after the annealing at the temperatures below 200°C. The annealing at 300°C, however, leads to significant rearrangement of the gold layer and the transition threshold increases to 70 nm. Significant carbon contamination and the presence of oxidized structures on gold-coated samples are observed in XPS spectra. Gold coating leads to a decrease in the sample surface roughness. Annealing at 300°C of pristine PTFE and gold-coated PTFE results in significant increase of the sample surface roughness. PMID:22078024

  15. Photochromic silver nanoparticles fabricated by sputter deposition

    SciTech Connect

    Okumu, J.; Dahmen, C.; Sprafke, A.N.; Luysberg, M.; Plessen, G. von; Wuttig, M.

    2005-05-01

    In this study a simple route to preparing photochromic silver nanoparticles in a TiO{sub 2} matrix is presented, which is based upon sputtering and subsequent annealing. The formation of silver nanoparticles with sizes of some tens of nanometers is confirmed by x-ray diffraction and transmission electron microscopy. The inhomogeneously broadened particle-plasmon resonance of the nanoparticle ensemble leads to a broad optical-absorption band, whose spectral profile can be tuned by varying the silver load and the annealing temperature. Multicolor photochromic behavior of this Ag-TiO{sub 2} system upon irradiation with laser light is demonstrated and discussed in terms of a particle-plasmon-assisted electron transfer from the silver nanoparticles to TiO{sub 2} and subsequent trapping by adsorbed molecular oxygen. The electron depletion in the nanoparticles reduces the light absorption at the wavelength of irradiation. A gradual recovery of the absorption band is observed after irradiation, which is explained with a slow thermal release of electrons from the oxygen trapping centers and subsequent capture into the nanoparticles. The recovery can be accelerated by ultraviolet irradiation; the explanation for this observation is that electrons photoexcited in the TiO{sub 2} are captured into the nanoparticles and restore the absorption band.

  16. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  17. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  18. Thick beryllium coatings by magnetron sputtering

    SciTech Connect

    Wu, H; Nikroo, A; Youngblood, K; Moreno, K; Wu, D; Fuller, T; Alford, C; Hayes, J; Detor, A; Wong, M; Hamza, A; van Buuren, T; Chason, E

    2011-04-14

    Thick (>150 {micro}m) beryllium coatings are studied as an ablator material of interest for fusion fuel capsules for the National Ignition Facility (NIF). As an added complication, the coatings are deposited on mm-scale spherical substrates, as opposed to flats. DC magnetron sputtering is used because of the relative controllability of the processing temperature and energy of the deposits. We used ultra small angle x-ray spectroscopy (USAXS) to characterize the void fraction and distribution along the spherical surface. We investigated the void structure using a combination focused ion beam (FIB) and scanning electron microscope (SEM), along with transmission electron microscopy (TEM). Our results show a few volume percent of voids and a typical void diameter of less than two hundred nanometers. Understanding how the stresses in the deposited material develop with thickness is important so that we can minimize film cracking and delamination. To that end, an in-situ multiple optical beam stress sensor (MOSS) was used to measure the stress behavior of thick Beryllium coatings on flat substrates as the material was being deposited. We will show how the film stress saturates with thickness and changes with pressure.

  19. Multi-cathode unbalanced magnetron sputtering systems

    NASA Technical Reports Server (NTRS)

    Sproul, William D.

    1991-01-01

    Ion bombardment of a growing film during deposition is necessary in many instances to ensure a fully dense coating, particularly for hard coatings. Until the recent advent of unbalanced magnetron (UBM) cathodes, reactive sputtering had not been able to achieve the same degree of ion bombardment as other physical vapor deposition processes. The amount of ion bombardment of the substrate depends on the plasma density at the substrate, and in a UBM system the amount of bombardment will depend on the degree of unbalance of the cathode. In multi-cathode systems, the magnetic fields between the cathodes must be linked to confine the fast electrons that collide with the gas atoms. Any break in this linkage results in electrons being lost and a low plasma density. Modeling of the magnetic fields in a UBM cathode using a finite element analysis program has provided great insight into the interaction between the magnetic fields in multi-cathode systems. Large multi-cathode systems will require very strong magnets or many cathodes in order to maintain the magnetic field strength needed to achieve a high plasma density. Electromagnets offer the possibility of independent control of the plasma density. Such a system would be a large-scale version of an ion beam enhanced deposition (IBED) system, but, for the UBM system where the plasma would completely surround the substrate, the acronym IBED might now stand for Ion Blanket Enhanced Deposition.

  20. Pressureless Bonding Using Sputtered Ag Thin Films

    NASA Astrophysics Data System (ADS)

    Oh, Chulmin; Nagao, Shijo; Suganuma, Katsuaki

    2014-12-01

    To improve the performance and reliability of power electronic devices, particularly those built around next-generation wide-bandgap semiconductors such as SiC and GaN, the bonding method used for packaging must change from soldering to solderless technology. Because traditional solders are problematic in the harsh operating conditions expected for emerging high-temperature power devices, we propose a new bonding method in this paper, namely a pressureless, low-temperature bonding process in air, using abnormal grain growth on sputtered Ag thin films to realize extremely high temperature resistance. To investigate the mechanisms of this bonding process, we characterized the microstructural changes in the Ag films over various bonding temperatures and times. We measured the bonding properties of the specimens by a die-shear strength test, as well as by x-ray diffraction measurements of the residual stress in the Ag films to show how the microstructural developments were essential to the bonding technology. Sound bonds with high die strength can be achieved only with abnormal grain growth at optimum bonding temperature and time. Pressureless bonding allows for production of reliable high-temperature power devices for a wide variety of industrial, energy, and environmental applications.

  1. High-performance hybrid buffer layer using 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile/molybdenum oxide in inverted top-emitting organic light-emitting diodes.

    PubMed

    Park, Cheol Hwee; Lee, Hyun Jun; Hwang, Ju Hyun; Kim, Kyu Nyun; Shim, Yong Sub; Jung, Sun-Gyu; Park, Chan Hyuk; Park, Young Wook; Ju, Byeong-Kwon

    2015-03-25

    A high-performance 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HATCN)/molybdenum oxide (MoO3) hybrid buffer layer with high hole-injection efficiency and superior plasma resistance under the sputtering process was developed. The HATCN enhances the hole-injection efficiency, and the MoO3 effectively protects the underlying organic layers from plasma damage during deposition by sputtering. This improves the characteristics of inverted top-emitting organic light-emitting diodes using a top transparent conductive oxide electrode. The device using the hybrid buffer layer showed the highest electroluminescence characteristics among devices with other buffer layers. The high hole-injection efficiency of HATCN was shown by the J-F curve of hole-only devices, and the plasma protection performance of MoO3 was shown by atomic force microscope surface morphology images of the buffer layer film after O2 plasma treatment. PMID:25761363

  2. ZnO transparent conductive electrodes embedded with Pt nanoclusters for high-efficiency GaN-based light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Kim, Kyurin; Gil, Youngun; Jeong, Seonghoon; Oh, Munsik; Kim, Hyunsoo; Lee, Sung-Nam; Ahn, Kwang-Soon

    2016-01-01

    ZnO transparent conductive electrodes (TCEs) embedded with Pt nanoclusters were developed for the fabrication of reliable and efficient GaN-based light-emitting diodes (LEDs). The 200-nmthick ZnO films sputtered on Pt nanoclusters showed good TCE performance, i.e., a specific contact resistance of ˜10-5 Ωcm2, a sheet resistance of 50 Ω/sq, and an optical transmittance of 81.5% at 450 nm. LEDs fabricated with the ZnO TCEs embedded with Pt nanoclusters showed lower forward voltages and improved device reliability as compared to the reference LEDs fabricated with pure ZnO TCEs. This is attributed to the role of the interfacial Pt nanoclusters, suppressing the generation of sputtering surface damage on p-GaN and hence enhancing the carrier transport via Ohmic formation.

  3. Performance of the cold powered diodes and diode leads in the main magnets of the LHC

    NASA Astrophysics Data System (ADS)

    Willering, G. P.; Giloux, C.; Bajko, M.; Bednarek, M.; Bottura, L.; Charifoulline, Z.; Dahlerup-Petersen, K.; Dib, G.; D'Angelo, G.; Gharib, A.; Grand-Clement, L.; Izquierdo Bermudez, S.; Prin, H.; Roger, V.; Rowan, S.; Savary, F.; Tock, J.-Ph; Verweij, A.

    2015-12-01

    During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the contact resistances in the diode leads are analysed with available data acquired over more than 10 years from acceptance test until the main dipole training campaign in the LHC in 2015.

  4. Analysis of phased-array diode lasers

    SciTech Connect

    Hardy, A.; Streifer, W.

    1985-07-01

    An improved, more accurate analysis of phased-array diode lasers is presented, which yields results that differ both qualitatively and quantitatively from those previously employed. A numerical example indicating decreased splitting in array mode gains is included.

  5. Advanced laser diodes for sensing applications

    SciTech Connect

    VAWTER,GREGORY A.; MAR,ALAN; CHOW,WENG W.; ALLERMAN,ANDREW A.

    2000-01-01

    The authors have developed diode lasers for short pulse duration and high peak pulse power in the 0.01--100.0 m pulsewidth regime. A primary goal of the program was producing up to 10 W while maintaining good far-field beam quality and ease of manufacturability for low cost. High peak power, 17 W, picosecond pulses have been achieved by gain switching of flared geometry waveguide lasers and amplifiers. Such high powers area world record for this type of diode laser. The light emission pattern from diode lasers is of critical importance for sensing systems such as range finding and chemical detection. They have developed a new integrated optical beam transformer producing rib-waveguide diode lasers with a symmetric, low divergence, output beam and increased upper power limits for irreversible facet damage.

  6. Blood sugar monitoring with laser diode

    NASA Astrophysics Data System (ADS)

    Zhang, Xiqin; Chen, Jianhong; Yeo, Joon Hock

    2006-09-01

    In this paper, the non-invasive measurement of blood sugar level was studied by use of near infrared laser diode. The in-vivo experiments were carried out using laser diodes with wavelength 1625nm and 1650nm. Several volunteers were tested before and after drinking glucose solution. We took blood from a fingertip and measured its concentration with a glucose meter while taking signal voltage from laser diode system. The signal voltage was processed by using a computer and blood absorption was obtained. The results show that blood sugar level and blood absorption have similar trends before and after drinking glucose solution. We also compared the trends of drinking glucose solution and pure water and the results show that the difference of blood absorption is obvious. From the results we can see that laser diode is suitable for blood glucose monitoring.

  7. Diode laser (980nm) cartilage reshaping

    NASA Astrophysics Data System (ADS)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  8. Diode Lasers and Practical Trace Analysis.

    ERIC Educational Resources Information Center

    Imasaka, Totaro; Nobuhiko, Ishibashi

    1990-01-01

    Applications of lasers to molecular absorption spectrometry, molecular fluorescence spectrometry, visible semiconductor fluorometry, atomic absorption spectrometry, and atomic fluorescence spectrometry are discussed. Details of the use of the frequency-doubled diode laser are provided. (CW)

  9. Schottky barrier diode and method thereof

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid (Inventor); Franz, David (Inventor)

    2008-01-01

    Pt/n.sup.-GaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/n.sup.-GaN Schottky barrier diodes have very large active areas, up to 1 cm.sup.2, which exhibit extremely low leakage current at low reverse biases. Very large area Pt/n.sup.-GaN Schottky diodes of sizes 0.25 cm.sup.2 and 1 cm.sup.2 have been fabricated from n.sup.-/n.sup.+ GaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cm.sup.2 and 1 cm.sup.2 diodes both configured at a 0.5V reverse bias.

  10. Varactor diode assembly with low parasitic reactances

    NASA Technical Reports Server (NTRS)

    Dickens, L. E.

    1975-01-01

    Development of varactor diode assembly overcomes parasitic reactances of conventional varactor packages. In specially constructed assembly very high idler-frequency to signal-frequency ratios are used to obtain low-noise operation over maximum bandwidth.

  11. Impedance characteristics of terawatt ion diodes

    NASA Astrophysics Data System (ADS)

    Mendel, C. W., Jr.; Desjarlais, M. P.; Pointon, T. D.; Quintenz, J. P.; Rosenthal, S. E.; Seidel, D. B.; Slutz, S. A.

    Light ion fusion research has developed ion diodes that have unique properties when compared to other ion diodes. These diodes involve relativistic electrons, ion beam stagnation pressures that compress the magnetic field to the order of 10 Tesla, and large space charge and particle current effects throughout the accelerating region. These diodes have required new theories and models to account for effects that previously were unimportant. One of the most important effects of the magnetic field compression and large space charge has been impedance collapse. The impedance collapse can lead to poor energy transfer efficiency, beam debunching, and rapid change of the beam focus. The current understanding of these effects is discussed including some of the methods used to ameliorate them, and the future directions the theory and modeling will take.

  12. JANTX/N98B Zener diode

    NASA Technical Reports Server (NTRS)

    1980-01-01

    Tested diodes were manufactured aby Motorola and Siemens. Both sample lots performed well in groups 1 and 3 testing. Group 2 testing was most detrimental of three groups. Extreme heat was big factor in failure mode.

  13. The role of surface microstructure in the sputtering of graphite

    SciTech Connect

    Youchison, D.L.; Nahemow, M.D. ); McGrath, R.T. ); Baratta, A.J. )

    1991-05-01

    Extensive exposure to tokamak plasmas may result in significant alterations to the surface microstructure of graphite plasma-facing components. A change in microstructure from a commercial isotropic graphite to an amorphous carbon film may produce a significant change in the total sputtering yield and the level of plasma contamination. To investigate this sensitivity to surface microstructure, sputtering experiments on a variety of graphites with various surface structures were performed using the ion--surface interaction system (ISIS).{sup 1} ISIS is a computerized ion beam sputtering system equipped with twin quartz crystal microbalances capable of simultaneously monitoring both sputtering and redeposition of the beam target material. ISIS was used to obtain sputtering data on two orientations of pyrolytic graphite at seven energies between 100 eV and 10 keV. Helium bombardment perpendicular to the prism plane produced yields 2 to 7 times higher than on the basal plane. Proton bombardment perpendicular to the prism plane produced yields 45% higher than those on the basal plane. Amorphous graphite films produced from Poco AXF-5Q and Union Carbide ATJ graphites using an argon radio-frequency (rf) plasma discharge were also irradiated. Sputtering yields on the amorphous films were as much as 50% to an order of magnitude higher than those measured on commercial bulk samples. Pre and post-irradiation scanning electron microscopy of selected targets was performed to monitor surface microstructure. A structural mechanism responsible for the magnitude of physical sputtering is suggested, and an effective surface binding energy is introduced to quantify this structural dependence.

  14. Xenon Sputter Yield Measurements for Ion Thruster Materials

    NASA Technical Reports Server (NTRS)

    Williams, John D.; Gardner, Michael M.; Johnson, Mark L.; Wilbur, Paul J.

    2003-01-01

    In this paper, we describe a technique that was used to measure total and differential sputter yields of materials important to high specific impulse ion thrusters. The heart of the technique is a quartz crystal monitor that is swept at constant radial distance from a small target region where a high current density xenon ion beam is aimed. Differential sputtering yields were generally measured over a full 180 deg arc in a plane that included the beam centerline and the normal vector to the target surface. Sputter yield results are presented for a xenon ion energy range from 0.5 to 10 keV and an angle of incidence range from 0 deg to 70 deg from the target surface normal direction for targets consisting of molybdenum, titanium, solid (Poco) graphite, and flexible graphite (grafoil). Total sputter yields are calculated using a simple integration procedure and comparisons are made to sputter yields obtained from the literature. In general, the agreement between the available data is good. As expected for heavy xenon ions, the differential and total sputter yields are found to be strong functions of angle of incidence. Significant under- and over-cosine behavior is observed at low- and high-ion energies, respectively. In addition, strong differences in differential yield behavior are observed between low-Z targets (C and Ti) and high-Z targets (Mo). Curve fits to the differential sputter yield data are provided. They should prove useful to analysts interested in predicting the erosion profiles of ion thruster components and determining where the erosion products re-deposit.

  15. Photochemistry of Organic Light-Emitting Diodes

    SciTech Connect

    Ehara, Masahiro; Nakatsuji, Hiroshi

    2007-12-26

    The optical properties and excited-state geometries of some organic light-emitting diodes have been investigated by the SAC-CI method. The absorption and emission spectra have been predicted in high accuracy and the chain-length dependence of transition energies has been precisely reproduced. The present study provides the useful basis for the theoretical design predicting the photo-physical properties of the organic light-emitting diodes.

  16. Bypass diode for a solar cell

    SciTech Connect

    Rim, Seung Bum; Kim, Taeseok; Smith, David D.; Cousins, Peter J.

    2012-03-13

    Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

  17. Channelized coplanar waveguide pin-diode switches

    NASA Technical Reports Server (NTRS)

    Ponchak, G. E.; Simons, R. N.

    1989-01-01

    Three different types of p-i-n diode, reflective CPW switches are presented. The first two switches are the series and the shunt mounted diode switches. Each has achieved greater than 15 dB of isolation over a broad bandwidth. The third switch is a narrow band, high isolation switched filter which has achieved 19 dB of isolation. Equivalent circuits and measured performance for each switch is presented.

  18. Impedance characteristics of multistage ion diodes

    SciTech Connect

    Desjarlais, M.

    1994-09-01

    We further develop a theory of multistage diodes that includes the possibility of emission of ions in the final stage. The exact solutions are extremely cumbersome and are not practical for most applications. We have developed approximate solutions that are very accurate, require no integrations, and may be rapidly calculated using a simple iterative scheme. These solutions for the total current as a function of voltage are used in time-dependent modeling of a two-stage diode.

  19. Varactor diodes for millimeter and submillimeter wavelengths

    NASA Technical Reports Server (NTRS)

    Rizzi, Brian J.; Hesler, Jeffrey L.; Dossal, Hasan; Crowe, Thomas W.

    1992-01-01

    Whisker-contacted GaAs Schottky barrier varactor diodes are the most common high-frequency multiplier element in use today. They are inherently simple devices that have very high frequency response and have been used to supply local oscillator power for Schottky heterodyne receivers to frequencies approaching 700 GHz. This paper discusses the development of improved varactor diode technology for space based applications at millimeter and submillimeter wavelengths.

  20. Organic Schottky diode: Characterization of traps

    NASA Astrophysics Data System (ADS)

    Rani, Varsha; Yadav, Sarita; Ghosh, Subhasis

    2015-06-01

    We have demonstrated the formation and characterization of Schottky junction in metal/organic/metal sandwiched devices based on organic molecular semiconductors, using current-voltage (J-V) and capacitance-voltage (C-V) characteristics, in particular how traps affect the device performance. Ideality factor of organic Schottky diode is always greater than unity and increases with decreasing the temperature. Diffusion coefficient has been determined from current density -voltage characteristic in Schottky diodes.

  1. Performance measurements of hybrid PIN diode arrays

    SciTech Connect

    Shapiro, S.L. ); Arens, J.F.; Jernigan, J.G. . Space Sciences Lab.); Kramer, G. ); Collins, T.; Worley, S. ); Wilburn, C.D. ); Skubic, P. )

    1990-10-01

    We report the successful development of hybrid PIN diode arrays and a series of room-temperature measurements in a high-energy pion beam at FNAL. A PMOS VLSI 256 {times} 256 readout array having 30 {mu}m square pixels was indium-bump bonded to a mating PIN diode detector array. Preliminary measurements on the resulting hybrid show excellent signal-to-noise at room temperature. 3 refs., 5 figs.

  2. Phase Noise Reduction of Laser Diode

    NASA Technical Reports Server (NTRS)

    Zhang, T. C.; Poizat, J.-Ph.; Grelu, P.; Roch, J.-F.; Grangier, P.; Marin, F.; Bramati, A.; Jost, V.; Levenson, M. D.; Giacobino, E.

    1996-01-01

    Phase noise of single mode laser diodes, either free-running or using line narrowing technique at room temperature, namely injection-locking, has been investigated. It is shown that free-running diodes exhibit very large excess phase noise, typically more than 80 dB above shot-noise at 10 MHz, which can be significantly reduced by the above-mentioned technique.

  3. Stacked Switchable Element and Diode Combination

    DOEpatents

    Branz, H. M.; Wang, Q.

    2006-06-27

    A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship so that the semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to the switchable element (14).

  4. Stacked switchable element and diode combination

    DOEpatents

    Branz, Howard M.; Wang, Qi

    2006-06-27

    A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship so that the semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to the switchable element (14).

  5. Effect of sputtering target's grain size on the sputtering yield, particle size and coercivity (Hc) of Ni and Ni20Al thin films

    NASA Astrophysics Data System (ADS)

    Reza, M.; Sajuri, Z.; Yunas, J.; Syarif, J.

    2016-02-01

    Researches on magnetic thin films concentrated mainly on optimizing the sputtering parameters to obtain the desired thin film's properties. However, the effect of the sputtering target's properties towards the thin film's properties is not well established. This study is focused on analysing the effect of sputtering target's grain size towards the sputtering yield, particle size and the magnetic coercivity (Hc) of thin film. Two sets of sputtering targets; pure Ni (magnetic) and Ni20Al (at.%) (non-magnetic) were prepared. Each target has 2 sets of samples with different grain sizes; (a) 30 to 50μm and (b) 80 to 100μm. Thin films from each target were sputtered onto glass substrates under fixed sputtering parameters. The initial results suggested that the sputtering target's grain size has significant effect on the thin film's sputtering yield, particle size and Hc. Sputtering target with smaller grain size has 12% (pure Ni) to 60% (Ni20Al) higher sputtering yield, which produces thin films with smaller particle size and larger Hc value. These initial findings provides a basis for further magnetic thin film research, particularly for the seed layer in hard disk drive (HDD) media, where seed layer with smaller particle size is essential in reducing signal-to-noise ratio (SNR).

  6. SOI diode uncooled infrared focal plane arrays

    NASA Astrophysics Data System (ADS)

    Kimata, Masafumi; Ueno, Masashi; Takeda, Munehisa; Seto, Toshiki

    2006-02-01

    An uncooled infrared focal plane array (IR FPA) is a MEMS device that integrates an array of tiny thermal infrared detector pixels. An SOI diode uncooled IR FPA is a type that uses freestanding single-crystal diodes as temperature sensors and has various advantages over the other MEMS-based uncooled IR FPAs. Since the first demonstration of an SOI diode uncooled IR FPA in 1999, the pixel structure has been improved by developing sophisticated MEMS processes. The most advanced pixel has a three-level structure that has an independent metal reflector for interference infrared absorption between the temperature sensor (bottom level) and the infrared-absorbing thin metal film (top level). This structure makes it possible to design pixels with lower thermal conductance by allocating more area for thermal isolation without reducing infrared absorption. The new MEMS process for the three-level structure includes a XeF II dry bulk silicon etching process and a double organic sacrificial layer surface micromachining process. Employing advanced MEMS technology, we have developed a 640 x 480-element SOI diode uncooled IR FPA with 25-μm square pixels. The noise equivalent temperature difference of the FPA is 40 mK with f/1.0 optics. This result clearly demonstrates the great potential of the SOI diode uncooled IR FPA for high-end applications. In this paper, we explain the advances and state-of-the-art technology of the SOI diode uncooled IR FPA.

  7. Planarization of High Aspect Ratio P-I-N Diode Pillar Arrays for Blanket Electrical Contacts

    SciTech Connect

    Voss, L F; Shao, Q; Reinhardt, C E; Graff, R T; Conway, A M; Nikolic, R J; Deo, N; Cheung, C L

    2009-03-05

    Two planarization techniques for high aspect ratio three dimensional pillar structured P-I-N diodes have been developed in order to enable a continuous coating of metal on the top of the structures. The first technique allows for coating of structures with topography through the use of a planarizing photoresist followed by RIE etch back to expose the tops of the pillar structure. The second technique also utilizes photoresist, but instead allows for planarization of a structure in which the pillars are filled and coated with a conformal coating by matching the etch rate of the photoresist to the underlying layers. These techniques enable deposition using either sputtering or electron beam evaporation of metal films to allow for electrical contact to the tops of the underlying pillar structure. These processes have potential applications for many devices comprised of 3-D high aspect ratio structures. Two separate processes have been developed in order to ensure a uniform surface for deposition of an electrode on the {sup 10}Boron filled P-I-N pillar structured diodes. Each uses S1518 photoresist in order to achieve a relatively uniform surface despite the non-uniformity of the underlying detector. Both processes allow for metallization of the final structure and provide good electrical continuity over a 3D pillar structure.

  8. Deposition rate and substrate temperature effects on the structure and properties of bulk-sputtered OFHC Cu and Cu-0.15Zr. [Oxygen-Free High-Conductivity

    NASA Technical Reports Server (NTRS)

    Hecht, R. J.; Mullaly, J. R.

    1975-01-01

    Bulk-sputtered OFHC Cu and Cu-0.15 Zr used as inner walls of advanced regeneratively cooled thrust chambers are evaluated as to microstructure, surface topography, and fractography. It is found that under conditions of low substrate temperature, crystallite size and openness of the structure increase with increasing deposition rate for both materials. At elevated temperatures, an equiaxed ductile structure of OFHC Cu is produced only at low deposition rates; at higher deposition rate, open structures are observed with recrystallized equiaxed grains within large poorly bonded crystallites. The Cu-0.15 Zr alloy sputtered from the hollow cathode using a diode discharge shows open-type structures for all conditions evaluated. The use of a triode discharge in generating a dense non-voided structure of Cu-0.15 Zr is discussed.

  9. Device Performance of the Top-Emitting Organic Light-Emitting Diodes Using the Ba/Au/Indium Tin Oxide Cathode System with Long Skin Depth

    NASA Astrophysics Data System (ADS)

    Lim, Jong Tae; Jeong, Chang Hyun; Yeom, Geun Young

    2008-10-01

    This paper reports the favorable performance of a top-emitting organic light-emitting diode (TEOLED) using a Ba/Au/indium tin oxide (ITO) cathode. A cathode with a Ba layer and a long skin depth of 44.1 nm not only prevented damage to the underlying organic layers from ion bombardment during ITO sputtering, but also improved the light out-coupling of devices by increasing the transmittance. With increasing Ba thickness, the turn-on voltage and leakage current of the devices were lower than of those without Ba. The Ba layer in the cathode enhanced the optical characteristics of the devices by the balanced carrier injection.

  10. Sputter deposition of nanocrystalline beta-SiC films and molecular dynamics simulations of the sputter process.

    PubMed

    Ziebert, Carlos; Ye, Jian; Ulrich, Sven; Prskalo, Alen-Pilip; Schmauder, Siegfried

    2010-02-01

    Thin nanocrystalline films of silicon carbide (SiC) have been deposited on Si substrates by rf magnetron sputtering in pure Ar atmosphere. Simultaneously classical molecular dynamics (MD) simulations of sputtering of beta-SiC by Ar atoms were performed using IMD and Materials Explorer software with a combination of the Tersoff and the Ziegler-Biersack-Littmark (ZBL) potential in order to get more insight into the sputter process. In experiments the bias voltage (0 to -40 V) has been varied at constant substrate temperature of 900 degrees C to investigate the influence on the composition, the constitution and the mechanical properties of crystalline beta-SiC films. At second the substrate temperature has been varied between 900 degrees C and 100 degrees C to find the minimum substrate temperature that is needed to get nanocrystalline beta-SiC under the applied sputter conditions (ceramic SiC target, 300 W rf power, 18 cm target-substrate distance, 50 sccm Ar gas flow, 0.26 Pa total gas pressure). The films have been characterized by electron probe micro-analysis (EPMA), X-ray diffraction (XRD), Raman spectroscopy and atomic force microscopy (AFM). Hardness and residual stress have been investigated by nanoindentation and wafer bending. In the MD simulations the sputter yield was determined as a function of the energy of the incident Ar atoms (in the interesting range for sputter deposition, i.e., 50-1000 eV). To our knowledge this is the first time that the sputter yield of a SiC target was determined as a function of the energy of the incident Ar atoms in the low energy range by using MD simulations and compared with experimental results. PMID:20352766

  11. Reconstructing accurate ToF-SIMS depth profiles for organic materials with differential sputter rates.

    PubMed

    Taylor, Adam J; Graham, Daniel J; Castner, David G

    2015-09-01

    To properly process and reconstruct 3D ToF-SIMS data from systems such as multi-component polymers, drug delivery scaffolds, cells and tissues, it is important to understand the sputtering behavior of the sample. Modern cluster sources enable efficient and stable sputtering of many organics materials. However, not all materials sputter at the same rate and few studies have explored how different sputter rates may distort reconstructed depth profiles of multicomponent materials. In this study spun-cast bilayer polymer films of polystyrene and PMMA are used as model systems to optimize methods for the reconstruction of depth profiles in systems exhibiting different sputter rates between components. Transforming the bilayer depth profile from sputter time to depth using a single sputter rate fails to account for sputter rate variations during the profile. This leads to inaccurate apparent layer thicknesses and interfacial positions, as well as the appearance of continued sputtering into the substrate. Applying measured single component sputter rates to the bilayer films with a step change in sputter rate at the interfaces yields more accurate film thickness and interface positions. The transformation can be further improved by applying a linear sputter rate transition across the interface, thus modeling the sputter rate changes seen in polymer blends. This more closely reflects the expected sputtering behavior. This study highlights the need for both accurate evaluation of component sputter rates and the careful conversion of sputter time to depth, if accurate 3D reconstructions of complex multi-component organic and biological samples are to be achieved. The effects of errors in sputter rate determination are also explored. PMID:26185799

  12. Measurements and Modelling of Sputtering Rates with Low Energy Ions

    NASA Astrophysics Data System (ADS)

    Ruzic, David N.; Smith, Preston C.; Turkot, Robert B., Jr.

    1996-10-01

    The angular-resolved sputtering yield of Be by D+, and Al by Ar+ was predicted and then measured. A 50 to 1000 eV ion beam from a Colutron was focused on to commercial grade and magnetron target grade samples. The S-65 C grade beryllium samples were supplied by Brush Wellman and the Al samples from TOSOH SMD. In our vacuum chamber the samples can be exposed to a dc D or Ar plasma to remove oxide, load the surface and more-nearly simulate steady state operating conditions in the plasma device. The angular distribution of the sputtered atoms was measured by collection on a single crystal graphite witness plate. The areal density of Be or Al (and BeO2 or Al2O3, after exposure to air) was then measured using a Scanning Auger Spectrometer. Total yield was also measured by deposition onto a quartz crystal oscillator simultaneously to deposition onto the witness plate. A three dimensional version of vectorized fractal TRIM (VFTRIM3D), a Monte-Carlo computer code which includes surface roughness characterized by fractal geometry, was used to predict the angular distribution of the sputtered particles and a global sputtering coefficient. Over a million trajectories were simulated for each incident angle to determine the azimuthal and polar angle distributions of the sputtered atoms. The experimental results match closely with the simulations for total yield, while the measured angular distributions depart somewhat from the predicted cosine curve.

  13. Electronic excitation of condensed CO: Sputtering and chemical change

    NASA Astrophysics Data System (ADS)

    Chrisey, D. B.; Brown, W. L.; Boring, J. W.

    1990-01-01

    We have bombarded condensed CO "ice" films with keV and MeV ions at low temperatures to investigate the physical sputtering mechanisms and chemical modifications of the ice. The sputtering yield measured for keV and MeV H + and He + ions indicates that the yield has a quadratic dependence on the electronic stopping power of the ions. Energy spectra of CO molecules sputtered by bombardment with 53 keV He + and 34 keV Ar + ions are very similar and show a collision-cascade-like behavior. We explore the origin of this quadratic dependence in terms of several models proposed for sputtering by electronic excitation and conclude that the quadratic dependence is intrinsic to the electronic relaxation process for CO. RBS measurements of the residue produced from sputtering various thicknesses of the initial CO film (˜ (3-25) × 10 17 CO/cm 2) indicate the production of the residue is approximately proportional to the initial thickness, accounts for ˜ 2% of the initial mass, and has a stoichiometric composition of approximately C 3O. The production and composition of the residue is discussed in terms of existing mechanisms for the radiolysis of gas phase CO.

  14. Sputtering of a metal nanofoam by Au ions

    NASA Astrophysics Data System (ADS)

    Anders, Christian; Bringa, Eduardo M.; Urbassek, Herbert M.

    2015-01-01

    Porous materials, such as nanofoams, may react differently to irradiation than compact targets. This is caused by the influence of the cavities on the evolution of collision cascades, but also by the differing heat conduction which affects the spike phase. Using molecular dynamics simulation we study the sputtering of a Au nanofoam by 10 keV Au projectiles, and compare to the sputtering of a compact Au target. These bombardment conditions lead to a strong contribution of spikes to the sputtering process. We find the foam to sputter considerably less than the compact target; the open structure of the foam prevents the build-up of strong collision spike regions at the surface, which are the major source of sputtering in the compact target. Also emission takes a longer time scale in the foam, as particles need to travel longer pathways to be emitted. On the other hand, the molten phase is more extended in the foam and also exists for a longer time; this is caused by the reduced heat conductivity in this material.

  15. Nitinol: Tubing versus sputtered film - microcleanliness and corrosion behavior.

    PubMed

    Wohlschlögel, Markus; Lima de Miranda, Rodrigo; Schüßler, Andreas; Quandt, Eckhard

    2016-08-01

    Corrosion behavior and microcleanliness of medical-device grade Nitinol tubing (Nix Ti1- x , x = 0.51; outer diameter 7 mm, wall thickness 0.5 mm), drawn from various ingot qualities, are compared to the characteristics of sputtered Nitinol film material (Nix Ti1- x , x = 0.51; thickness 50 µm). Electropolished tubing half-shell samples are tested versus as-received sputtered film samples. Inclusion size distributions are assessed using quantitative metallography and corrosion behavior is investigated by potentiodynamic polarization testing in phosphate-buffered saline at body temperature. For the sputtered film samples, the surface chemistry is additionally analyzed employing Auger Electron Spectroscopy (AES) composition-depth profiling. Results show that the fraction of breakdowns in the potentiodynamic polarization test correlates with number and size of the inclusions in the material. For the sputtered Nitinol film material no inclusions were detectable by light microscopy on the one hand and no breakdowns were found in the potentiodynamic polarization test on the other hand. As for electropolished Nitinol, the sputtered Nitinol film material reveals Nickel depletion and an Oxygen-to-Titanium intensity ratio of ∼2:1 in the surface oxide layer, as measured by AES. © 2015 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 104B: 1176-1181, 2016. PMID:26087375

  16. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, Alan R.; Auciello, Orlando

    1990-01-01

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  17. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, A.R.; Auciello, O.

    1990-05-08

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  18. EMI shielding using composite materials with two sources magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ziaja, J.; Jaroszewski, M.; Lewandowski, M.

    2016-02-01

    In this study, the preparation composite materials for electromagnetic shields using two sources magnetron sputtering DC-M is presented. A composite material was prepared by coating a nonwoven polypropylene metallic layer in sputtering process of targets Ti (purity 99%) and brass alloy MO58 (58%Cu, 40%Zn, 2%Pb) and ϕ diameter targets = 50 mm, under argon atmosphere. The system with magnetron sputtering sources was powered using switch-mode power supply DPS (Dora Power System) with a maximum power of 16 kW and a maximum voltage of 1.2 kV with group frequency from 50 Hz to 5 kHz. The influence of sputtering time of individual targets on the value of the EM field attenuation SE [dB] was investigated for the following supply conditions: pressure pp = 2x10-3 Torr, sputtering power P = 750 W, the time of applying a layer t = 5 min, group frequency fg = 2 kHz, the frequency of switching between targets fp = 1 Hz.

  19. Effect of temperature on the current (capacitance and conductance)–voltage characteristics of Ti/n-GaAs diode

    SciTech Connect

    Ejderha, K.; Duman, S. Urhan, F.; Nuhoglu, C.; Turut, A.

    2014-12-21

    In this study, Ti/n-GaAs Schottky barrier diode has been fabricated by DC magnetron sputtering. The current–voltage, capacitance–voltage, and conductance–voltage characteristics of Ti/n–GaAs diode have been investigated in the temperature range of 80–320 K. The ideality factor and barrier height values have been calculated from the forward current–voltage characteristics. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependent capacitance–voltage characteristics have been measured to calculate the carrier concentration, diffusion potential, barrier height, and temperature coefficient of the barrier height (α = −0.65 meV K{sup −1}). The fact that the temperature coefficient of the barrier height changes from metal to metal has been ascribed to the chemical nature of the contact metal or metal electronegativity.

  20. Photoluminescence performance enhancement of ZnO/MgO heterostructured nanowires and their applications in ultraviolet laser diodes.

    PubMed

    Shi, Zhi-Feng; Zhang, Yuan-Tao; Cui, Xi-Jun; Zhuang, Shi-Wei; Wu, Bin; Chu, Xian-Wei; Dong, Xin; Zhang, Bao-Lin; Du, Guo-Tong

    2015-06-01

    Vertically aligned ZnO/MgO coaxial nanowire (NW) arrays were prepared on sapphire substrates by metal-organic chemical vapor deposition combined with a sputtering system. We present a comparative investigation of the morphological and optical properties of the produced heterostructures with different MgO layer thicknesses. Photoluminescence measurements showed that the optical performances of ZnO/MgO coaxial NWs were strongly dependent on the MgO layer thickness. The intensity of deep-level emission (DLE) decreased monotonously with the increase of MgO thickness, while the enhancement of ultraviolet (UV) emission showed a critical thickness of 15 nm, achieving a maximum intensity ratio (∼226) of IUV/IDLE at the same time. The significantly improved exciton emission efficiency of the coaxial NW structures allows us to study the surface passivation effect, photogenerated carrier confinement and transfer in terms of energy band theory. More importantly, we achieved an ultralow threshold (4.5 mA, 0.58 A cm(-2)) electrically driven UV lasing action based on the ZnO/MgO NW structures by constructing an Au/MgO/ZnO metal/insulator/semiconductor diode, and the continuous-current-driven diode shows a good temperature tolerance. The results obtained on the unique optical properties of ZnO/MgO coaxial NWs shed light on the design and development of ZnO-based UV laser diodes assembled with nanoscale building blocks. PMID:25803480

  1. Effects of parameters on the performance of amorphous IGZO thin films prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Niu, Jian-wen; Ma, Rui-xin; Wang, Yuan-yuan; Li, Shi-na; Cheng, Shi-yao; Liu, Zi-lin

    2014-09-01

    Amorphous indium-gallium-zinc oxide (IGZO) transparent conductive thin films are prepared on glass substrates by radio frequency (RF) magnetron sputtering. The effects of seven factors, which are substrate temperature, sputtering atmosphere, working pressure, sputtering power, annealing temperature, negative bias voltage and sputtering time, on Hall mobility, transmittance and surface roughness are studied through orthogonal experiments. The results show that the effects of working pressure, substrate temperature and sputtering atmosphere on performance of films are the most prominent. According to the experimental results and discussion, relatively reasonable process parameters are obtained, which are working pressure of 0.35 Pa, substrate temperature of 200 °C, sputtering atmosphere of Ar, sputtering power of 125 W, sputtering time of 30 min, negative bias voltage of 0 V and annealing temperature of 300 °C.

  2. High power impulse magnetron sputtering: Current-voltage-timecharacteristics indicate the onset of sustained self-sputtering

    SciTech Connect

    Anders, Andre; Andersson, Joakim; Ehiasarian, Arutiun

    2007-08-03

    The commonly used current-voltage characteristics are foundinadequate for describing the pulsed nature of the high power impulsemagnetron sputtering (HIPIMS) discharge, rather, the description needs tobe expanded to current-voltage-time characteristics for each initial gaspressure. Using different target materials (Cu, Ti, Nb, C, W, Al, Cr) anda pulsed constant-voltage supply it is shown that the HIPIMS dischargestypically exhibit an initial pressure dependent current peak followed bya second phase that is power and material dependent. This suggests thatthe initial phase of a HIPIMS discharge pulse is dominated by gas ionswhereas the later phase has a strong contribution from self-sputtering.For some materials the discharge switches into a mode of sustainedself-sputtering. The very large differences between materials cannot beascribed to the different sputter yields but they indicate thatgeneration and trapping ofsecondary electrons plays a major role forcurrent-voltage-time characteristics. In particular, it is argued thatthe sustained self-sputtering phase is associated with thegeneration ofmultiply charged ions because only they can cause potential emission ofsecondary electrons whereas the yield caused by singly charged metal ionsis negligibly small.

  3. Anion formation in sputter ion sources by neutral resonant ionization.

    PubMed

    Vogel, J S

    2016-02-01

    Focused Cs(+) beams in sputter ion sources create mm-diameter pits supporting small plasmas that control anionization efficiencies. Sputtering produces overwhelmingly neutral products that the plasma can ionize as in a charge-change vapor. Electron capture between neutral atoms rises as the inverse square of the difference between the ionization potential of the Cs state and the electron affinity of the sputtered atom, allowing resonant ionization at very low energies. A plasma collision-radiation model followed electronic excitation up to Cs(7d). High modeled Cs(7d) in a 0.5 mm recess explains the 80 μA/mm(2) C(-) current density compared to the 20 μA/mm(2) from a 1 mm recess. PMID:26931912

  4. Composition and structure of sputter deposited erbium hydride thin films

    SciTech Connect

    ADAMS,DAVID P.; ROMERO,JUAN A.; RODRIGUEZ,MARK A.; FLORO,JERROLD A.; BANKS,JAMES C.

    2000-05-10

    Erbium hydride thin films are grown onto polished, a-axis {alpha} Al{sub 2}O{sub 3} (sapphire) substrates by reactive ion beam sputtering and analyzed to determine composition, phase and microstructure. Erbium is sputtered while maintaining a H{sub 2} partial pressure of 1.4 x 10{sup {minus}4} Torr. Growth is conducted at several substrate temperatures between 30 and 500 C. Rutherford backscattering spectrometry (RBS) and elastic recoil detection analyses after deposition show that the H/Er areal density ratio is approximately 3:1 for growth temperatures of 30, 150 and 275 C, while for growth above {approximately}430 C, the ratio of hydrogen to metal is closer to 2:1. However, x-ray diffraction shows that all films have a cubic metal sublattice structure corresponding to that of ErH{sub 2}. RBS and Auger electron that sputtered erbium hydride thin films are relatively free of impurities.

  5. Hardness of CNx films deposited by MCECR plasma sputtering

    NASA Astrophysics Data System (ADS)

    Cai, Changlong; Li, Junpeng; Mi, Qian; Ma, Weihong; Yan, Yixin; Liang, Haifeng

    2007-12-01

    The CNx (carbon nitride) films were deposited on silicon (100) with Mirror-Confinement-type Electron Cyclotron Resonance (MCECR) plasma sputtering method, which sputters pure carbon target with the Ar/N II plasma. The thickness of CNx films was about 80nm. In this paper, the hardness of CNx films was investigated, and it is measured by the nanoindenter. The technical parameters of MCECR plasma sputtering influencing the hardness of CNx films include the substrate bias, microwave power, target voltage, gas pressure, and the Ar/N II ratio. Results shown that, the hardness of CNx films is bigger, when the substrate bias is at +30V, the microwave power is 200W, the target voltage is +500V, the gas pressure is 2×10 -2Pa, and the Ar/N II ratio is 9/1.

  6. Analytical and numerical depth resolution functions in sputter profiling

    NASA Astrophysics Data System (ADS)

    Hofmann, S.; Liu, Y.; Wang, J. Y.; Kovac, J.

    2014-09-01

    Quantification of sputter depth profiles is frequently done by fitting the convolution integral over concentration and depth resolution function to the experimental results. For a thin delta layer, there exist analytical solutions. The analytical depth resolution functions of two popular approaches, that of the Mixing-Roughness-Information depth (MRI) model and that of Dowsett and coworkers are compared. It is concluded that the analytical depth resolution function of the MRI model gives the correct location of a buried delta layer with respect to the measured profile, and a clear description of the information depth in AES, XPS and SIMS. Both analytical solutions can be extended to larger layer thickness. But they are less flexible with respect to physical parameters which are not constant with concentration or sputtered depth, such as detection sensitivity, atomic mixing or preferential sputtering. For these cases, numerical solutions have to be used.

  7. Highly conducting ZnSe films by reactive magnetron sputtering

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Stirn, R. J.

    1986-01-01

    This paper presents the results of an effort to deposit high-conductivity ZnSe on glass and conducting SnO2-coated glass substrates by reactive magnetron sputter deposition, using pure metal sputter targets of Zn and dopants such as In, Ga, and Al. Clear yellow ZnSe films were successfully obtained. By using substrate temperatures as low as 150 C, cosputtered dopants, and sputter parameters and H2Se injection rates which maximize the Zn-to-Se ratio in the films, ZnSe bulk resistivities have been lowered by up to seven orders of magnitude, reaching values as low as 20 ohm cm. The most effective dopant to data has been In, cosputtered with Zn in amounts leading to In atomic concentrations as high as 1.4 percent. Atomic-absorption measurements show an average 49.9/48.9 ratio of Zn to Se.

  8. Magnetron discharge sputtering for fabrication of nanogradient optical coatings

    NASA Astrophysics Data System (ADS)

    Volpian, O. D.; Kuzmichev, A. I.; Ermakov, G. F.; Krikunov, A. I.; Obod, Yu A.; Silin, N. V.; Shkatula, S. V.

    2015-11-01

    The technology of the middle frequency pulse reactive magnetron sputtering for fabrication of nanogradient optical coatings with smooth variation of refractive index was developed and studied. The technology is based on programmable motion of a substrate over two magnetrons with targets of different materials. The feature of the deposition process is a constant composition of reactive gas medium and an invariable magnetron operation mode. To realize this technology, an automatic computer-controlled sputtering system additionally comprising a gas discharge activator of reactive gas (oxygen) and an in situ optical monitor- spectrovisor has been built. The dielectric oxide-based nanogradient coatings of photon-barrier type were successfully fabricated. The obtained results confirm the high potential of the middle frequency pulse reactive magnetron sputtering of silicon and metal targets for fabrication of nanogradient dielectric optical coatings with excellent properties.

  9. Recent advancements in sputter-type heavy negative ion sources

    SciTech Connect

    Alton, G.D.

    1989-01-01

    Significant advancement have been made in sputter-type negative ion sources which utilize direct surface ionization, or a plasma to form the positive ion beam used to effect sputtering of samples containing the material of interest. Typically, such sources can be used to generate usable beam intensities of a few ..mu..A to several mA from all chemically active elements, depending on the particular source and the electron affinity of the element in question. The presentation will include an introduction to the fundamental processes underlying negative ion formation by sputtering from a low work function surface and several sources will be described which reflect the progress made in this technology. 21 refs., 9 figs., 1 tab.

  10. High-temperature sputtered coatings for optical fiber

    NASA Astrophysics Data System (ADS)

    Rogers, Harvey N.

    1993-02-01

    We have developed a magnetron sputter coating method to continuously coat silica optical fibers with a dual layer coating of Inconel 625 alloy and platinum. The coating process is performed on-line as the fiber is drawn to minimize the rapid strength degradation of the silica due to attack by moisture in the air. Because of the modular design of the sputter equipment, the process is well suited for the deposition of a wide variety of metals and is readily adapted for scale-up. Multimode optical fibers were produced with coatings up to 0.5 microns in thickness consisting of an adhesion layer of Inconel and an outer layer of platinum. The coatings are adherent and remain mechanically intact after thermal cycling between room temperature and 2000 degree(s)F in vacuum. Approximate tensile strengths of 145 to 290 Kpse have been measured. These attributes make this sputter coated fiber a promising candidate for use in high temperature environments.

  11. Physics of arcing, and implications to sputter deposition

    SciTech Connect

    Anders, Andre

    2005-03-15

    Arc and glow discharges are defined based on their cathode processes. Arcs are characterized by collective electron emission, which can be stationary with hot cathodes (thermionic arcs), or non-stationary with cold cathodes (cathodic arcs). A brief review on cathodic arc properties serves as the starting point to better understand arcing phenomena in sputtering. Although arcing occurs in both metal and reactive sputtering, it is more of an issue in the reactive case. Arcing occurs if sufficiently high field strength leads to thermal runaway of an electron emission site. The role of insulating layers and surface potential adjustment through current leakage is highlighted. In the situation of magnetron sputtering with ''racetrack'', the need for a model with two spatial dimensions is shown. In many cases, arcing is initiated by breakdown of dielectric layers and inclusions. It is most efficiently prevented if formation and excessive charge-up of dielectric layers and inclusions can be avoided.

  12. Anion formation in sputter ion sources by neutral resonant ionization

    NASA Astrophysics Data System (ADS)

    Vogel, J. S.

    2016-02-01

    Focused Cs+ beams in sputter ion sources create mm-diameter pits supporting small plasmas that control anionization efficiencies. Sputtering produces overwhelmingly neutral products that the plasma can ionize as in a charge-change vapor. Electron capture between neutral atoms rises as the inverse square of the difference between the ionization potential of the Cs state and the electron affinity of the sputtered atom, allowing resonant ionization at very low energies. A plasma collision-radiation model followed electronic excitation up to Cs(7d). High modeled Cs(7d) in a 0.5 mm recess explains the 80 μA/mm2 C- current density compared to the 20 μA/mm2 from a 1 mm recess.

  13. On the evolution of film roughness during magnetron sputtering deposition

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; De Hosson, J. Th. M.

    2010-11-15

    The effect of long-range screening on the surface morphology of thin films grown with pulsed-dc (p-dc) magnetron sputtering is studied. The surface evolution is described by a stochastic diffusion equation that includes the nonlocal shadowing effects in three spatial dimensions. The diffusional relaxation and the angular distribution of the incident particle flux strongly influence the transition to the shadowing growth regime. In the magnetron sputtering deposition the shadowing effect is essential because of the configuration of the magnetron system (finite size of sputtered targets, rotating sample holder, etc.). A realistic angular distribution of depositing particles is constructed by taking into account the cylindrical magnetron geometry. Simulation results are compared with the experimental data of surface roughness evolution during 100 and 350 kHz p-dc deposition, respectively.

  14. Mechanical properties of sputtered silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Vila, M.; Cáceres, D.; Prieto, C.

    2003-12-01

    Silicon nitride thin films were prepared by reactive sputtering from different sputtering targets and using a range of Ar/N2 sputtering gas mixtures. The hardness and the Young's modulus of the samples were determined by nanoindentation measurements. Depending on the preparation parameters, the obtained values were in the ranges 8-23 and 100-210 GPa, respectively. Additionally, Fourier-transform infrared spectroscopy, Rutherford backscattering spectroscopy, and x-ray diffraction were used to characterize samples with respect to different types of bonding, atomic concentrations, and structure of the films to explain the variation of mechanical properties. The hardness and Young's modulus were determined as a function of film composition and structure and conditions giving the hardest film were found. Additionally, a model that assumes a series coupling of the elastic components, corresponding to the Si-O and Si-N bonds present in the sample has been proposed to explain the observed variations of hardness and Young's modulus.

  15. Ion beam sputter target and method of manufacture

    SciTech Connect

    Higdon, Clifton; Elmoursi, Alaa A.; Goldsmith, Jason; Cook, Bruce; Blau, Peter; Jun, Qu; Milner, Robert

    2014-09-02

    A target for use in an ion beam sputtering apparatus made of at least two target tiles where at least two of the target tiles are made of different chemical compositions and are mounted on a main tile and geometrically arranged on the main tile to yield a desired chemical composition on a sputtered substrate. In an alternate embodiment, the tiles are of varied thickness according to the desired chemical properties of the sputtered film. In yet another alternate embodiment, the target is comprised of plugs pressed in a green state which are disposed in cavities formed in a main tile also formed in a green state and the assembly can then be compacted and then sintered.

  16. SiC-Based Schottky Diode Gas Sensors

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

    1997-01-01

    Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

  17. Argon Cluster Sputtering Source for ToF-SIMS Depth Profiling of Insulating Materials: High Sputter Rate and Accurate Interfacial Information

    SciTech Connect

    Wang, Zhaoying; Liu, Bingwen; Zhao, Evan; Jin, Ke; Du, Yingge; Neeway, James J.; Ryan, Joseph V.; Hu, Dehong; Zhang, Hongliang; Hong, Mina; Le Guernic, Solenne; Thevuthasan, Suntharampillai; Wang, Fuyi; Zhu, Zihua

    2015-08-01

    For the first time, the use of an argon cluster ion sputtering source has been demonstrated to perform superiorly relative to traditional oxygen and cesium ion sputtering sources for ToF-SIMS depth profiling of insulating materials. The superior performance has been attributed to effective alleviation of surface charging. A simulated nuclear waste glass, SON68, and layered hole-perovskite oxide thin films were selected as model systems due to their fundamental and practical significance. Our study shows that if the size of analysis areas is same, the highest sputter rate of argon cluster sputtering can be 2-3 times faster than the highest sputter rates of oxygen or cesium sputtering. More importantly, high quality data and high sputter rates can be achieved simultaneously for argon cluster sputtering while this is not the case for cesium and oxygen sputtering. Therefore, for deep depth profiling of insulating samples, the measurement efficiency of argon cluster sputtering can be about 6-15 times better than traditional cesium and oxygen sputtering. Moreover, for a SrTiO3/SrCrO3 bi-layer thin film on a SrTiO3 substrate, the true 18O/16O isotopic distribution at the interface is better revealed when using the argon cluster sputtering source. Therefore, the implementation of an argon cluster sputtering source can significantly improve the measurement efficiency of insulating materials, and thus can expand the application of ToF-SIMS to the study of glass corrosion, perovskite oxide thin films, and many other potential systems.

  18. Low-temperature epitaxy of Ge films by sputter deposition.

    NASA Technical Reports Server (NTRS)

    Khan, I. H.

    1973-01-01

    It is shown experimentally that isoepitaxial growth of Ge films on Ge substrates can be obtained by dc sputtering at substrate temperatures as low as 100 C. The crystallographic structure and orientation of the films are strongly influenced by such deposition parameters as substrate temperature, growth rate, surface contamination, and sputtering-gas purity. The amorphous-polycrystalline transition occurs between 110 and 115 C, while the polycrystalline-single crystalline transition occurs at roughly 140 C. The crystallographic order increases with increasing substrate temperature.

  19. Hollow metal target magnetron sputter type radio frequency ion source.

    PubMed

    Yamada, N; Kasuya, T; Tsubouchi, N; Wada, M

    2014-02-01

    A 70 mm diameter 70 mm long compact ion source equipped with a hollow sputtering target has been designed and tested. The hollow sputtering target serves as the radio frequency (RF) plasma excitation electrode at 13.56 MHz. A stable beam of Cu(+) has been extracted when Ar was used as the discharge support gas. In the extracted beam, Cu(+) had occupied more than 85% of the total ion current. Further increase in Cu(+) ions in the beam is anticipated by increasing the RF power and Ar pressure. PMID:24593636

  20. Lateral variation of target poisoning during reactive magnetron sputtering

    SciTech Connect

    Guettler, D.; Groetzschel, R.; Moeller, W.

    2007-06-25

    The reactive gas incorporation into a Ti sputter target has been investigated using laterally resolving ion beam analysis during dc magnetron deposition of TiN in an Ar/N{sub 2} atmosphere. At sufficiently low reactive gas flow, the nitrogen incorporation exhibits a pronounced lateral variation, with a lower areal density in the target racetrack compared to the target center and edge. The findings are reproduced by model calculations. In the racetrack, the balance of reactive gas injection and sputter erosion is shifted toward erosion. The injection of nitrogen is dominated by combined molecular adsorption and recoil implantation versus direct ion implantation.

  1. Realistic ice sputtering experiments for the surfaces of Galilean moons

    NASA Astrophysics Data System (ADS)

    Galli, A.; Pommerol, A.; Wurz, P.; Jost, B.; Scheer, J. A.; Vorburger, A.; Tulej, M.; Thomas, N.; Wieser, M.; Barabash, S.

    2015-10-01

    We use an existing laboratory facility for space hardware calibration in vacuum to study the impact of energetic ions on water ice. The experiment is intended to simulate the conditions on the surface of Jupiter's icy moons. The first results of hydrogen, oxygen, and sulphur ions sputtering a sample of porous salty ice confirmed extrapolations from previous sputtering experiments obtained at different impact angles for nonporous water ice [3]. Here, we present additional measurements for a larger range of ion impact angles and different ice samples.

  2. Off-axis sputter deposition of thin films

    SciTech Connect

    Capuano, L.A.; Newman, N. )

    1990-01-01

    Currently there are several techniques for making high Tc thin films, e.g., sputter deposition, laser ablation, coevaporation (including MBE), chemical vapor deposition and solution coating/pyrolysis. Of these techniques, the authors have demonstrated that high-pressure in-situ off-axis rf-magnetron sputter deposition is a simple, relatively inexpensive process capable of reproducibly yielding YBCO superconducting thin films with excellent surface resistance properties. This article describes the off-axis technique, the basic equipment requirements and the performance characteristics of high Tc superconductor films produced using this technique.

  3. Direct current sputtering of boron from boron/coron mixtures

    DOEpatents

    Timberlake, John R.; Manos, Dennis; Nartowitz, Ed

    1994-01-01

    A method for coating a substrate with boron by sputtering includes lowering the electrical resistance of a boron-containing rod to allow electrical conduction in the rod; placing the boron-containing rod inside a vacuum chamber containing substrate material to be coated; applying an electrical potential between the boron target material and the vacuum chamber; countering a current avalanche that commences when the conduction heating rate exceeds the cooling rate, and until a steady equilibrium heating current is reached; and, coating the substrate material with boron by sputtering from the boron-containing rod.

  4. Direct current sputtering of boron from boron/boron mixtures

    DOEpatents

    Timberlake, J.R.; Manos, D.; Nartowitz, E.

    1994-12-13

    A method for coating a substrate with boron by sputtering includes lowering the electrical resistance of a boron-containing rod to allow electrical conduction in the rod; placing the boron-containing rod inside a vacuum chamber containing substrate material to be coated; applying an electrical potential between the boron target material and the vacuum chamber; countering a current avalanche that commences when the conduction heating rate exceeds the cooling rate, and until a steady equilibrium heating current is reached; and, coating the substrate material with boron by sputtering from the boron-containing rod. 2 figures.

  5. Magnetron Sputtered Gold Contacts on N-gaas

    NASA Technical Reports Server (NTRS)

    Buonaquisti, A. D.; Matson, R. J.; Russell, P. E.; Holloway, P. H.

    1984-01-01

    Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

  6. Discharge current modes of high power impulse magnetron sputtering

    SciTech Connect

    Wu, Zhongzhen Xiao, Shu; Ma, Zhengyong; Cui, Suihan; Ji, Shunping; Pan, Feng; Tian, Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

    2015-09-15

    Based on the production and disappearance of ions and electrons in the high power impulse magnetron sputtering plasma near the target, the expression of the discharge current is derived. Depending on the slope, six possible modes are deduced for the discharge current and the feasibility of each mode is discussed. The discharge parameters and target properties are simplified into the discharge voltage, sputtering yield, and ionization energy which mainly affect the discharge plasma. The relationship between these factors and the discharge current modes is also investigated.

  7. Highly aligned carbon nanotube arrays fabricated by bias sputtering

    NASA Astrophysics Data System (ADS)

    Hayashi, Nobuyuki; Honda, Shin-ichi; Tsuji, Keita; Lee, Kuei-Yi; Ikuno, Takashi; Fujimoto, Keiichi; Ohkura, Shigeharu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

    2003-05-01

    Vertically aligned carbon nanotube (CNT) arrays have been successfully grown on Si substrates by dc bias sputtering. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations revealed that the resultant arrays consisted of dense CNTs with diameters of 40-60 nm and lengths of 300-400 nm. The CNTs were found to have a bamboo-like structure at the end of which metallic nanoparticle was formed, indicating tip growth mechanism. The energy enhancement of carbon particles is a key factor for synthesis of CNTs using dc bias sputtering system.

  8. Hollow metal target magnetron sputter type radio frequency ion source

    SciTech Connect

    Yamada, N. Kasuya, T.; Wada, M.; Tsubouchi, N.

    2014-02-15

    A 70 mm diameter 70 mm long compact ion source equipped with a hollow sputtering target has been designed and tested. The hollow sputtering target serves as the radio frequency (RF) plasma excitation electrode at 13.56 MHz. A stable beam of Cu{sup +} has been extracted when Ar was used as the discharge support gas. In the extracted beam, Cu{sup +} had occupied more than 85% of the total ion current. Further increase in Cu{sup +} ions in the beam is anticipated by increasing the RF power and Ar pressure.

  9. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  10. Lateral variation of target poisoning during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Güttler, D.; Grötzschel, R.; Möller, W.

    2007-06-01

    The reactive gas incorporation into a Ti sputter target has been investigated using laterally resolving ion beam analysis during dc magnetron deposition of TiN in an Ar /N2 atmosphere. At sufficiently low reactive gas flow, the nitrogen incorporation exhibits a pronounced lateral variation, with a lower areal density in the target racetrack compared to the target center and edge. The findings are reproduced by model calculations. In the racetrack, the balance of reactive gas injection and sputter erosion is shifted toward erosion. The injection of nitrogen is dominated by combined molecular adsorption and recoil implantation versus direct ion implantation.

  11. Advances in sputtered and ion plated solid film lubrication

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1985-01-01

    The glow discharge or ion assisted vacuum deposition techniques, primarily sputtering and ion plating, have rapidly emerged and offer great potential to deposit solid lubricants. The increased energizing of these deposition processes lead to improved adherence and coherence, favorable morphological growth, higher density, and reduced residual stresses in the film. These techniques are of invaluable importance where high precision machines tribo-components require very thin, uniform lubricating films (0.2 m), which do not interface with component tolerances. The performance of sputtered MoS2 films and ion plated Au and Pb films are described in terms of film thickness, coefficient of friction, and wear lives.

  12. High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

    NASA Astrophysics Data System (ADS)

    Shi, Zhi-Feng; Sun, Xu-Guang; Wu, Di; Xu, Ting-Ting; Zhuang, Shi-Wei; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

    2016-05-01

    Recently, perovskite-based light-emitting diodes based on organometal halide emitters have attracted much attention because of their excellent properties of high color purity, tunable emission wavelength and a low-temperature processing technique. As is well-known, organic light-emitting diodes have shown powerful capabilities in this field; however, the fabrication of these devices typically relies on high-temperature and high-vacuum processes, which increases the final cost of the product and renders them uneconomical for use in large-area displays. Organic/inorganic hybrid halide perovskites match with these material requirements, as it is possible to prepare such materials with high crystallinity through solution processing at low temperature. Herein, we demonstrated a high-brightness green light-emitting diode based on PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structures by a spin-coating method combined with a sputtering system. Under forward bias, a dominant emission peak at ~530 nm with a low full width of half-maximum (FWHM) of 30 nm can be achieved at room temperature. Owing to the high surface coverage of the CH3NH3PbBr3 layer and a device design based on carrier injection and a confinement configuration, the proposed diode exhibits good electroluminescence performance, with an external quantum efficiency of 0.0645%. More importantly, we investigated the working stability of the studied diode under continuous operation to verify the sensitivity of the electroluminescence performance to ambient atmosphere and to assess the suitability of the diode for practical applications. Moreover, the underlying reasons for the undesirable emission decay are tentatively discussed. This demonstration of an effective green electroluminescence based on CH3NH3PbBr3 provides valuable information for the design and development of perovskites as efficient emitters, thus facilitating their use in existing applications and suggesting new potential applications.

  13. Influence of reactive sputter deposition conditions on crystallization of zirconium oxide thin films

    SciTech Connect

    Sethi, Guneet; Sunal, Paul; Horn, Mark W.; Lanagan, Michael T.

    2009-05-15

    Zirconium oxide thin films were prepared through reactive magnetron sputtering with a zirconium target using pulsed-dc and radio frequency (rf) sources. The film crystallization was studied with respect to sputtering growth variables such as sputtering power, sputtering pressure, source frequency, oxygen pressure, substrate temperature, and substrate material. The crystallization was studied through x-ray diffraction (XRD) 2{theta} scans and was quantified with peak full width at half maximum and crystallite size. Crystallization of the films was found to occur over a broad range of sputter deposition parameters, while the amorphous phase was produced only at high sputtering pressure and low sputtering power. With a decrease in sputtering pressure or power, the crystallite size decreased. Energy dispersive x-ray spectroscopy, electron microscopy, and XRD analysis revealed that at very low pressures, these films are polyphase assemblages of cubic phases of oxygen deficient zirconium oxides such as ZrO and Zr{sub 2}O. When the sputtering oxygen content of these films is increased above 25%, monoclinic-ZrO{sub 2} phase is stabilized in the films and the deposition rate decreases. However, in the case of rf sputtering, an additional peak corresponding to tetragonal phase of ZrO{sub 2} is observed. The sputtering parameters were related to physical parameters such as sputtering mode, ion energy, and substrate temperature, which influence crystallinity.

  14. Method and apparatus for sputtering utilizing an apertured electrode and a pulsed substrate bias

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J. S.; Shaltens, R. K. (Inventor)

    1973-01-01

    The method and equipment used for sputtering by use of an apertured electrode and a pulsed substrate bias are discussed. The technique combines the advantages of ion plating with the versatility of a radio frequency sputtered source. Electroplating is accomplished by passing a pulsed high voltage direct current to the article being plated during radio frequency sputtering.

  15. Percutaneous diode laser disc nucleoplasty

    NASA Astrophysics Data System (ADS)

    Menchetti, P. P.; Longo, Leonardo

    2004-09-01

    The treatment of herniated disc disease (HNP) over the years involved different miniinvasive surgical options. The classical microsurgical approach has been substituted over the years both by endoscopic approach in which is possible to practice via endoscopy a laser thermo-discoplasty, both by percutaneous laser disc nucleoplasty. In the last ten years, the percutaneous laser disc nucleoplasty have been done worldwide in more than 40000 cases of HNP. Because water is the major component of the intervertebral disc, and in HNP pain is caused by the disc protrusion pressing against the nerve root, a 980 nm Diode laser introduced via a 22G needle under X-ray guidance and local anesthesia, vaporizes a small amount of nucleous polposus with a disc shrinkage and a relief of pressure on nerve root. Most patients get off the table pain free and are back to work in 5 to 7 days. Material and method: to date, 130 patients (155 cases) suffering for relevant symptoms therapy-resistant 6 months on average before consulting our department, have been treated. Eightyfour (72%) males and 46 (28%) females had a percutaneous laser disc nucleoplasty. The average age of patients operated was 48 years (22 - 69). The level of disc removal was L3/L4 in 12 cases, L4/L5 in 87 cases and L5/S1 in 56 cases. Two different levels were treated at the same time in 25 patients. Results: the success rate at a minimum follow-up of 6 months was 88% with a complication rate of 0.5%.

  16. Diode-pumped laser altimeter

    NASA Technical Reports Server (NTRS)

    Welford, D.; Isyanova, Y.

    1993-01-01

    TEM(sub 00)-mode output energies up to 22.5 mJ with 23 percent slope efficiencies were generated at 1.064 microns in a diode-laser pumped Nd:YAG laser using a transverse-pumping geometry. 1.32-micron performance was equally impressive at 10.2 mJ output energy with 15 percent slope efficiency. The same pumping geometry was successfully carried forward to several complex Q-switched laser resonator designs with no noticeable degradation of beam quality. Output beam profiles were consistently shown to have greater than 90 percent correlation with the ideal TEM(sub 00)-order Gaussian profile. A comparison study on pulse-reflection-mode (PRM), pulse-transmission-mode (PTM), and passive Q-switching techniques was undertaken. The PRM Q-switched laser generated 8.3 mJ pulses with durations as short as 10 ns. The PTM Q-switch laser generated 5 mJ pulses with durations as short as 5 ns. The passively Q-switched laser generated 5 mJ pulses with durations as short as 2.4 ns. Frequency doubling of both 1.064 microns and 1.32 microns with conversion efficiencies of 56 percent in lithium triborate and 10 percent in rubidium titanyl arsenate, respectively, was shown. Sum-frequency generation of the 1.064 microns and 1.32 microns radiations was demonstrated in KTP to generate 1.1 mJ of 0.589 micron output with 11.5 percent conversion efficiency.

  17. Efficient millimeter wave 1140 GHz/ diode for harmonic power generation

    NASA Technical Reports Server (NTRS)

    1967-01-01

    Epitaxial gallium arsenide diode junction formed in a crossed waveguide structure operates as a variable reactance harmonic generator. This varactor diode can generate power efficiently in the low-millimeter wavelength.

  18. Proton displacement damage in light-emitting and laser diodes

    NASA Technical Reports Server (NTRS)

    Johnston, A. H.

    2000-01-01

    The effects of proton displacement damage on light-emitting diodes and laser diodes are discussed, comparing the radiation sensitivity of current technology devices with older devices for which data exists in the literature.

  19. Diode-quad bridge circuit means

    NASA Technical Reports Server (NTRS)

    Harrison, D. R.; Dimeff, J. (Inventor)

    1975-01-01

    Diode-quad bridge circuit means is described for use as a transducer circuit or as a discriminator circuit. It includes: (1) a diode bridge having first, second, third, and fourth bridge terminals consecutively coupled together by four diodes polarized in circulating relationship; (2) a first impedance connected between the second bridge terminal and a circuit ground; (3) a second impedance connected between the fourth bridge terminal and the circuit ground; (4) a signal source having a first source terminal capacitively coupled to the first and third bridge terminals, and a second source terminal connected to the circuit ground; and (5) an output terminal coupled to the first bridge terminal and at which an output signal may be taken.

  20. Argon Cluster Sputtering Source for ToF-SIMS Depth Profiling of Insulating Materials: High Sputter Rate and Accurate Interfacial Information.

    PubMed

    Wang, Zhaoying; Liu, Bingwen; Zhao, Evan W; Jin, Ke; Du, Yingge; Neeway, James J; Ryan, Joseph V; Hu, Dehong; Zhang, Kelvin H L; Hong, Mina; Le Guernic, Solenne; Thevuthasan, Suntharampilai; Wang, Fuyi; Zhu, Zihua

    2015-08-01

    The use of an argon cluster ion sputtering source has been demonstrated to perform superiorly relative to traditional oxygen and cesium ion sputtering sources for ToF-SIMS depth profiling of insulating materials. The superior performance has been attributed to effective alleviation of surface charging. A simulated nuclear waste glass (SON68) and layered hole-perovskite oxide thin films were selected as model systems because of their fundamental and practical significance. Our results show that high sputter rates and accurate interfacial information can be achieved simultaneously for argon cluster sputtering, whereas this is not the case for cesium and oxygen sputtering. Therefore, the implementation of an argon cluster sputtering source can significantly improve the analysis efficiency of insulating materials and, thus, can expand its applications to the study of glass corrosion, perovskite oxide thin film characterization, and many other systems of interest. PMID:25953490