Science.gov

Sample records for dc plasma nitriding

  1. Effects of DC plasma nitriding parameters on microstructure and properties of 304L stainless steel

    SciTech Connect

    Wang Jun; Xiong Ji Peng Qian; Fan Hongyuan; Wang Ying; Li Guijiang; Shen Baoluo

    2009-03-15

    A wear-resistant nitrided layer was formed on a 304L austenitic stainless steel substrate by DC plasma nitriding. Effects of DC plasma nitriding parameters on the structural phases, micro-hardness and dry-sliding wear behavior of the nitrided layer were investigated by optical microscopy, X-ray diffraction, scanning electron microscopy, micro-hardness testing and ring-on-block wear testing. The results show that the highest surface hardness over a case depth of about 10 {mu}m is obtained after nitriding at 460 deg. C. XRD indicated a single expanded austenite phase and a single CrN nitride phase were formed at 350 deg. C and 480 deg. C, respectively. In addition, the S-phase layers formed on the samples provided the best dry-sliding wear resistance under the ring-on-block contact configuration test.

  2. Study on the influence of nitrogen on titanium nitride in a dc post magnetron sputtering plasma system

    NASA Astrophysics Data System (ADS)

    Moni Borah, Sankar; Bailung, Heremba; Ratan Pal, Arup; Chutia, Joyanti

    2008-10-01

    The characteristics of direct current (dc) glow discharge plasma have been studied in a post magnetron device with an argon and nitrogen gas mixture. The introduction of nitrogen modifies the discharge leading to modifications of plasma parameters, transport mechanism and the cathode sheath. The electron energy distribution function, density and temperature profile are measured to characterize the discharge. Measured plasma potential profiles show the modification of the structure of the cathode sheath and confinement space variation. Optical emission spectroscopy is used to identify prominent transitions of the different species in the discharge. The discharge mode in argon undergoes a transition from metallic mode to reactive mode when nitrogen concentration exceeds argon.

  3. Analysis of plasma nitrided steels

    NASA Technical Reports Server (NTRS)

    Salik, J.; Ferrante, J.; Honecy, F.; Hoffman, R., Jr.

    1987-01-01

    The analysis of plasma nitrided steels can be divided to two main categories - structural and chemical. Structural analysis can provide information not only on the hardening mechanisms but also on the fundamental processes involved. Chemical analysis can be used to study the kinetics for the nitriding process and its mechanisms. In this paper preliminary results obtained by several techniques of both categories are presented and the applicability of those techniques to the analysis of plasma-nitrided steels is discussed.

  4. Nitriding of titanium and its alloys by N2, NH3 or mixtures of N2 + H2 in a dc arc plasma at low pressures ( or = to torr)

    NASA Technical Reports Server (NTRS)

    Avni, R.

    1984-01-01

    The dc glow discharges in different gas mixtures of Ar + N2, Ar + NH3 or Ar + N2 + H2 result in the surface nitriding of Ti metal and its alloy (Ti6Al4V). Various gas mixtures were used in order to establish the main active species governing the nitriding process, i.e., N, N2, NH, or NH2 as excited or ionized particles. The dc discharge was sampled and analyzed by quadruple mass spectrometry (QPMS) and optical emission spectroscopy (OES), and the nitrided samples were analyzed by scanning electron microscopy (SEM) with an EDAX attachment, microhardness, and Fourier transform infrared reflectance spectrometry (FTIR). It was found that the excited and ionized nitrogen and hydrogen atoms are the main species responsible for the nitriding process in a dc glow discharge.

  5. Analysis of plasma-nitrided steels

    NASA Technical Reports Server (NTRS)

    Salik, J.; Ferrante, J.; Honecy, F.; Hoffman, R., Jr.

    1986-01-01

    The analysis of plasma nitrided steels can be divided to two main categories - structural and chemical. Structural analysis can provide information not only on the hardening mechanisms but also on the fundamental processes involved. Chemical analysis can be used to study the kinetics for the nitriding process and its mechanisms. In this paper preliminary results obtained by several techniques of both categories are presented and the applicability of those techniques to the analysis of plasma-nitrided steels is discussed.

  6. Effects of Plasma Nitriding on the Tensile Properties of Al-Mg-Si

    NASA Astrophysics Data System (ADS)

    Ghauri, I. M.; Ahmad, R.; Mubarik, F. E.; Afzal, Naveed; Ahmed, Sajjad; Ayub, R.

    2012-07-01

    Effects of plasma nitriding on the tensile behavior of Al-Mg-Si alloy were investigated in this study. The specimens were nitrided at 70 W input pulsed DC power at 1 mbar pressure of nitrogen for 4 h using glow discharge plasma. The formation of aluminum nitride layer on the specimen's surface was confirmed by the XRD analysis. Stress-strain curves of both un-nitrided and nitrided specimens were obtained using Universal Testing Machine. The comparison of these curves reveals that yield stress, ultimate tensile stress, percentage elongation, and stress relaxation rate decrease after plasma nitriding. The changes in the tensile properties after nitriding have been correlated with the changes in the microstructure of the specimens as observed using scanning electron microscope.

  7. Surface modification of AISI 304 austenitic stainless steel by plasma nitriding

    NASA Astrophysics Data System (ADS)

    Liang, Wang

    2003-04-01

    Plasma nitriding of austenitic stainless steel samples has been carried out using pulse dc glow discharge plasma of NH 3 gas at substrate temperature ranging from 350 to 520 °C. A nitriding time of only 4 h has been found to produce a compact surface nitride layer composed of γN' phase with a thickness of around 7-12 μm as processing temperature remained between 420 and 450 °C. The thickness of γN phase was found to be very thin only about 2 μm after plasma nitriding at temperature below 400 °C. Microhardness measurements showed significant increase in the hardness from 240 HV (for untreated samples) up to 1700 HV (for nitrided samples at temperature of 460 °C). For nitriding at higher temperature, i.e. above 460 °C, the chromium nitrides precipitated in the nitrided layer and caused austenite phase transform into ferrite phase or iron nitrides ( γ' or ɛ). The consequent result of chromium nitride precipitation is the reduction of corrosion resistance of nitrided layer. Compressive residual stresses existed in the nitrided layer due to nitrogen diffusion into austenitic stainless steel.

  8. Argon gas concentration effects on nanostructured molybdenum nitride layer growth using 100 Hz pulsed dc glow discharge

    NASA Astrophysics Data System (ADS)

    Ikhlaq, U.; Ahmad, R.; Saleem, S.; Shah, M. S.; Umm-i-Kalsoom; Khan, N.; Khalid, N.

    2012-08-01

    The effect of argon concentration (10%-40%) on the surface properties of molybdenum is studied in nitrogen-argon mixture using 100 Hz pulsed dc glow discharge. The analysis is carried out by using X-ray diffractometer (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Vickers microhardness tester to investigate surface properties of the nitrided samples. XRD results exhibit the formation of molybdenum nitrides. Crystallite size analysis and SEM morphology confirm the growth of nanostructured molybdenum nitride layers. Moreover, significant increase in surface hardness (by a factor of about two times) is found when the sample is treated for 30% argon in nitrogen-argon mixed plasma.

  9. A Plasma-Based DC-DC Electrical Transformer

    NASA Astrophysics Data System (ADS)

    Nebel, Richard; Finn, John

    2013-10-01

    Previous work has indicated that it may be possible to make DC-DC electrical transformers using plasmas. The mechanism is an MHD electromagnetic relaxation process induced by helical electrodes. This process is now being tested on the Bismark device at Tibbar Technologies.

  10. Metal surface nitriding by laser induced plasma

    NASA Astrophysics Data System (ADS)

    Thomann, A. L.; Boulmer-Leborgne, C.; Andreazza-Vignolle, C.; Andreazza, P.; Hermann, J.; Blondiaux, G.

    1996-10-01

    We study a nitriding technique of metals by means of laser induced plasma. The synthesized layers are composed of a nitrogen concentration gradient over several μm depth, and are expected to be useful for tribological applications with no adhesion problem. The nitriding method is tested on the synthesis of titanium nitride which is a well-known compound, obtained at present by many deposition and diffusion techniques. In the method of interest, a laser beam is focused on a titanium target in a nitrogen atmosphere, leading to the creation of a plasma over the metal surface. In order to understand the layer formation, it is necessary to characterize the plasma as well as the surface that it has been in contact with. Progressive nitrogen incorporation in the titanium lattice and TiN synthesis are studied by characterizing samples prepared with increasing laser shot number (100-4000). The role of the laser wavelength is also inspected by comparing layers obtained with two kinds of pulsed lasers: a transversal-excited-atmospheric-pressure-CO2 laser (λ=10.6 μm) and a XeCl excimer laser (λ=308 nm). Simulations of the target temperature rise under laser irradiation are performed, which evidence differences in the initial laser/material interaction (material heated thickness, heating time duration, etc.) depending on the laser features (wavelength and pulse time duration). Results from plasma characterization also point out that the plasma composition and propagation mode depend on the laser wavelength. Correlation of these results with those obtained from layer analyses shows at first the important role played by the plasma in the nitrogen incorporation. Its presence is necessary and allows N2 dissociation and a better energy coupling with the target. Second, it appears that the nitrogen diffusion governs the nitriding process. The study of the metal nitriding efficiency, depending on the laser used, allows us to explain the differences observed in the layer features

  11. Reactive plasma atomization of aluminum nitride powder

    SciTech Connect

    Prichard, P.; Besser, M.; Sordelet, D.; Anderson, I.

    1997-02-01

    Experiments were performed to synthesize AlN powders by reacting Al with N using a conventional dc arc plasma as heat source. Feeding Al powder into Ar/N plasma open to atmosphere produced mainly Al oxide. Experiments using a chamber backfilled with nitrogen suppressed the Al oxide, but little AlN was formed. A furnace and crucible assembly was designed to feed molten Al directly into a DeLaval nozzle attached to the face of the dc arc plasma gun. Resulting submicron powders show a significant increase in AlN formation. This was dependent on chamber pressure, plasma velocity, and molten liquid feed rate. Experimental parameters, equipment design, effects of atomization/vaporization/condensation are discussed.

  12. Early stages during plasma nitriding of pure iron

    SciTech Connect

    Palacios, M.D.; Martinez, O.; Oseguera, J.

    1995-12-31

    The sequence of nitride formation during the early stages of plasma nitriding of pure iron was studied by optical microscopy, SEM, TEM and x-ray diffraction. Plasma nitriding at {approximately}490 C in a 25 vol.%H{sub 2} + 75 vol.%N{sub 2} mixture starts with the formation of {gamma}{prime}-Fe{sub 4}N after 40s. Once {gamma}{prime} nucleates, it mainly spreads laterally due to diffusion shortcuts in the discontinuous surface nitride layer. Before {gamma}{prime} is continuous on the surface, {epsilon} nucleates on top of it shortly after 40S. Epsilon is then observed to grow, both inwardly and laterally along with {gamma}{prime}. A compact {gamma}{prime}/{epsilon} bilayer forms on the surface at around 100s. The kinetics of nucleation, growth and compactation of the nitrides observed in the present work was significantly more rapid than in any of the nitriding process reported in the literature, including plasma nitriding. The acceleration of the nitriding kinetics in the early stages of plasma nitriding may be attributed to enhanced diffusion resulting from a high nitrogen flux from the plasma atmosphere. The results presented are consistent with the findings of a companion work on modeling the kinetics of nitride layer growth.

  13. The effect of Mo on the characteristics of a plasma nitrided layer of sintered iron

    NASA Astrophysics Data System (ADS)

    Bendo, T.; Maliska, A. M.; Acuña, J. J. S.; Binder, C.; Hammes, G.; Consoni, D. R.; Klein, A. N.

    2016-02-01

    Samples of PM (powder metallurgy) plain iron were superficially enriched with Mo during a sintering process using a DC discharge. The Mo atoms from the cathode produced an enriched layer of approximately 15-20 μm thick, and it was enriched with up to 2.0 at.% Mo. Subsequently, the samples were plasma nitrided in a gas mixture (N2/H2) at different temperatures and nitrogen concentrations. The effect of the molybdenum on the plasma nitrided layer of sintered iron was investigated. Abnormal nitride morphologies that developed in the surface layer were observed. The presence of Mo that was substitutionally dissolved in ferrite influences the nucleation and growth of the iron-nitride compound layer. The microstructure and (local) composition changes of the layers were investigated using scanning and transmission electron microscopy (SEM and TEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and glow discharge optical emission spectroscopy (GDOES) analyses. To evaluate the mechanical properties, Vickers microhardness tests were conducted along the sample cross-sections. According to the nitriding conditions, submicroscopic fcc Mo2N-type nitrides that are coherent with the α-Fe matrix develop, as confirmed by the TEM analysis and by the broadening of the diffraction lines in the X-ray diffractogram. Molybdenum nitrides, γ-Mo2N, with an fcc structure and sphere-like shapes were observed on the sample surface where the Mo concentrations were higher.

  14. A dc Penning surface-plasma source

    SciTech Connect

    Smith, H.V. Jr.; Allison, P.; Geisik, C.; Schmitt, D.R.; Schneider, J.D.; Stelzer, J.E.

    1993-09-01

    After developing a pulsed-8X source for H{sup {minus}} beams, we are now testing a cooled, dc version. The design dc power density on the cathode surface is 900 W/cm{sup 2}, much higher than achieved in any previously-reported Penning surface-plasma source (SPS). The source is designed to accommodate dc arc power levels up to 30 kW by cooling the electrode surfaces with pressurized, hot water. After striking the arc using a 600-V pulser, a 350-V dc power supply is switched in to sustain the 100-V discharge. Now our tests are concentrating on arc pulse lengths {le}1 s. Ultimately, the discharge will be operated dc. The source is described and the initial arc test results are presented.

  15. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen.

    PubMed

    Hamann, S; Börner, K; Burlacov, I; Spies, H-J; Strämke, M; Strämke, S; Röpcke, J

    2015-12-01

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH4, C2H2, HCN, and NH3). With the help of OES, the rotational temperature of the screen plasma could be determined. PMID:26724023

  16. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    SciTech Connect

    Hamann, S. Röpcke, J.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.

    2015-12-15

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH{sub 4}, C{sub 2}H{sub 2}, HCN, and NH{sub 3}). With the help of OES, the rotational temperature of the screen plasma could be determined.

  17. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    NASA Astrophysics Data System (ADS)

    Hamann, S.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.; Röpcke, J.

    2015-12-01

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH4, C2H2, HCN, and NH3). With the help of OES, the rotational temperature of the screen plasma could be determined.

  18. Plasma-Activated Sintering of Aluminum Nitride

    NASA Astrophysics Data System (ADS)

    Hensley, J. E.; Risbud, S. H.; Groza, J. R.; Yamazaki, K.

    1993-10-01

    The use of a new plasma- activated sintering (PAS) process to densify aluminum nitride (AIN) powders to nearly full theoretical density (97 to >99%) in 5 to 10 min was investigated. The process consists of a pulse activation step, followed by sintering at 1730 to 1800 °C using resistance heating in carbon dies. Submicron size (~0.44 μm) AIN powders of low oxygen content (<1 wt%) were consolidated to near full density in both air and vacuum with no sintering aids or binders. Transmission electron microscopy (TEM) examination revealed an equiaxed, submicron grain structure (~0.77 μm) with no apparent pores or intergranular phases. X- ray powder diffraction revealed no secondary crystalline phases.

  19. Effect of Plasma Nitriding on the Performance of WC-Co Cutting Tools

    NASA Astrophysics Data System (ADS)

    Hamzaoglu, Ebru; Yilmaz, Safak; Gulmez, Turgut

    2011-04-01

    This paper presents the effect of nitriding process parameters on the cutting performance of WC-Co tools. The cutting performance was measured by CNC machining of GG25 cast iron parts. The hardness and phase composition of nitrided layer were determined for different plasma nitriding temperatures and times. The hardness of the nitrided layer increased at all plasma nitrided conditions investigated. However, the machining performance of the cutting inserts varied in the range between a 60% increase and a 40% decrease after plasma nitriding. The maximum number of machined parts was seen when the insert was nitrided at 600 °C-4 h and at 500 °C-4 h.

  20. Simulation of the dc Plasma in Carbon Nanotube Growth

    NASA Technical Reports Server (NTRS)

    Hash, David; Bose, Deepak; Govindan, T. R.; Meyyappan, M.; Biegel, Bryan (Technical Monitor)

    2003-01-01

    A model for the dc plasma used in carbon nanotube growth is presented, and one-dimensional simulations of an acetylene/ammonia/argon system are performed. The effect of dc bias is illustrated by examining electron temperature, electron and ion densities, and neutral densities. Introducing a tungsten filament in the dc plasma, as in hot filament chemical vapor deposition with plasma assistance, shows negligible influence on the system characteristics.

  1. Research of functional properties of nitride ion-plasma coatings

    NASA Astrophysics Data System (ADS)

    Vaulina, O. Yu; Ovechkin, B. B.; Papchenko, A. V.; Shvagrukova, E. V.

    2016-02-01

    This paper considers the influence of ion-plasma coatings with the use of nitrogen (N), zirconium nitride (ZrN), titanium-aluminum nitride (Ti,Al)N and titanium nitride and zirconium nitride by-layer (TiN+ZrN - eight layers) on the properties of steel 65X13. The main functional properties of the coatings are determined: microhardness, nanohardness, Young's modulus and corrosion resistance. It is shown that all the types of coatings allow increasing the physical and mechanical characteristics of instrument steel 65X13. Hardness and wear-resistance, depending on the type of the deposited coating, increase from 1, 5 to 4 times, corrosion resistance increases by tens times.

  2. Plasma deposited silicon nitride for indium phosphide encapsulation

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Kapoor, V. J.; Biedenbender, M. D.; Williams, W. D.

    1989-01-01

    The composition and the annealing characteristics of plasma-deposited silicon-nitride encapsulating films on the ion-implanted InP substrates were investigated, using two different substrate-cleaning procedures (organic solvents and HF or HIO3 solutions) prior to encapsulation. The effect of plasma deposition of silicon nitride on the InP substrates was assessed through the current-voltage characteristics of Schottky diodes. Results of XPS analyses showed that the cleaning procedure that employed HF solution left less oxygen on the InP surface than the procedure involving HIO3. No chemical interaction between the film and the substrate was observed before or after annealing.

  3. Plasma nitriding of Fe-18Cr-9Ni in the range of 723-823 K

    SciTech Connect

    Kuwahara, H.; Matsuoka, H.; Tamura, I. ); Takada, J. ); Kikuchi, S.; Tomii, Y. )

    1991-08-01

    To clarify the mechanism of plasma nitriding, the authors examined the optical microstructure, the hardness, the precipitation, and the concentration of dissolved nitrogen in Fe-18Cr-9Ni nitrided using plasma in the range of 723-823 K. Compared with ammonia-gas nitriding, the features of plasma nitriding are the formation of small chromium-nitride precipitates (CrN), the absence of an externally nitrided layer, the high concentration of dissolved nitrogen, and the high hardness (HV = 1,200). The diffusion coefficient of nitrogen in the present alloy was determined using the growth rate of the internally nitrided layer, based on calculations used in internal oxidation. Plasma- and gas-nitriding were also compared with respect to the growth rate of the nitrided layer.

  4. Bone tissue response to plasma-nitrided titanium implant surfaces.

    PubMed

    Ferraz, Emanuela Prado; Sverzut, Alexander Tadeu; Freitas, Gileade Pereira; Sá, Juliana Carvalho; Alves, Clodomiro; Beloti, Marcio Mateus; Rosa, Adalberto Luiz

    2015-01-01

    A current goal of dental implant research is the development of titanium (Ti) surfaces to improve osseointegration. Plasma nitriding treatments generate surfaces that favor osteoblast differentiation, a key event to the process of osteogenesis. Based on this, it is possible to hypothesize that plasma-nitrided Ti implants may positively impact osseointegration. Objective The aim of this study was to evaluate the in vivo bone response to Ti surfaces modified by plasma-nitriding treatments. Material and Methods Surface treatments consisted of 20% N2 and 80% H2, 450°C and 1.5 mbar during 1 h for planar and 3 h for hollow cathode. Untreated surface was used as control. Ten implants of each surface were placed into rabbit tibiae and 6 weeks post-implantation they were harvested for histological and histomorphometric analyses. Results Bone formation was observed in contact with all implants without statistically significant differences among the evaluated surfaces in terms of bone-to-implant contact, bone area between threads, and bone area within the mirror area. Conclusion Our results indicate that plasma nitriding treatments generate Ti implants that induce similar bone response to the untreated ones. Thus, as these treatments improve the physico-chemical properties of Ti without affecting its biocompatibility, they could be combined with modifications that favor bone formation in order to develop new implant surfaces. PMID:25760262

  5. Bone tissue response to plasma-nitrided titanium implant surfaces

    PubMed Central

    FERRAZ, Emanuela Prado; SVERZUT, Alexander Tadeu; FREITAS, Gileade Pereira; SÁ, Juliana Carvalho; ALVES, Clodomiro; BELOTI, Marcio Mateus; ROSA, Adalberto Luiz

    2015-01-01

    A current goal of dental implant research is the development of titanium (Ti) surfaces to improve osseointegration. Plasma nitriding treatments generate surfaces that favor osteoblast differentiation, a key event to the process of osteogenesis. Based on this, it is possible to hypothesize that plasma-nitrided Ti implants may positively impact osseointegration. Objective The aim of this study was to evaluate the in vivo bone response to Ti surfaces modified by plasma-nitriding treatments. Material and Methods Surface treatments consisted of 20% N2 and 80% H2, 450°C and 1.5 mbar during 1 h for planar and 3 h for hollow cathode. Untreated surface was used as control. Ten implants of each surface were placed into rabbit tibiae and 6 weeks post-implantation they were harvested for histological and histomorphometric analyses. Results Bone formation was observed in contact with all implants without statistically significant differences among the evaluated surfaces in terms of bone-to-implant contact, bone area between threads, and bone area within the mirror area. Conclusion Our results indicate that plasma nitriding treatments generate Ti implants that induce similar bone response to the untreated ones. Thus, as these treatments improve the physico-chemical properties of Ti without affecting its biocompatibility, they could be combined with modifications that favor bone formation in order to develop new implant surfaces. PMID:25760262

  6. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride - Technology and piezoelectric properties

    NASA Astrophysics Data System (ADS)

    Stoeckel, C.; Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-01

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d31 is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d33.

  7. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

    SciTech Connect

    Stoeckel, C. Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-21

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.

  8. Study of a nitriding plasma using coherent anti-Stokes Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Pealat, M.; Lefebvre, M.

    1987-01-01

    The rotational and vibrational distribution of the first levels of excitation of N2 molecular system were measured using Raman diffusion in the discharge of a nitriding plasma. The nitrided specimens were analyzed using metallography and X-ray diffraction.

  9. Moessbauer spectroscopy study on the corrosion resistance of plasma nitrided ASTM F138 stainless steel in chloride solution

    SciTech Connect

    Souza, S.D. de; Olzon-Dionysio, M.; Basso, R.L.O.; Souza, S. de

    2010-10-15

    Plasma nitriding of ASTM F138 stainless steel samples has been carried out using dc glow discharge under 80% H{sub 2}-20% N{sub 2} gas mixture, at 673 K, and 2, 4, and 7 h time intervals, in order to investigate the influence of treatment time on the microstructure and the corrosion resistance properties. The samples were characterized by scanning electron microscopy, glancing angle X-ray diffraction and conversion electron Moessbauer spectroscopy, besides electrochemical tests in NaCl aerated solution. A modified layer of about 6 {mu}m was observed for all the nitrided samples, independent of nitriding time. The X-ray diffraction analysis shows broad {gamma}{sub N} phase peaks, signifying a great degree of nitrogen supersaturation. Besides {gamma}{sub N,} the Moessbauer spectroscopy results indicated the occurrence of {gamma}' and {epsilon} phases, as well as some other less important phases. Corrosion measurements demonstrate that the plasma nitriding time affects the corrosion resistance and the best performance is reached at 4 h treatment. It seems that the {epsilon}/{gamma}' fraction ratio plays an important role on the resistance corrosion. Additionally, the Moessbauer spectroscopy was decisive in this study, since it was able to identify and quantify the iron phases that influence the corrosion resistance of plasma nitrided ASTM F138 samples.

  10. Development of Simplified Atmospheric-Pressure Plasma Nitriding

    NASA Astrophysics Data System (ADS)

    Yamamoto, Hirofumi; Ichiki, Ryuta; Maeda, Akihide; Yamanouchi, Kenta; Akamine, Shuichi; Kanazawa, Seiji; Oita University Team

    2015-09-01

    Nitriding treatment is one of the surface hardening technologies, applied to dies and automobile components. In recent industry, low-pressure nitriding treatment using vacuum system is mainstream. On the other hand, we have originally developed an atmospheric-pressure plasma nitriding which do not need vacuum system. However we needed an air-tight container to purge residual oxygen and external heater to control treatment temperature. To make this technique practical, we addressed to construct a simplified treatment system, where treatment temperature is controlled by thermal plasma itself and oxygen purging is achieved by a simple cover. This means that any air-tight container and external heater is not necessary. As a result, surface temperature is controlled by changing treatment gap from nozzle tip to steel surface. We succeeded in controlling well thickness of hardened layer by adjusting treatment temperature even in such a simplified system. In the conference, we also discuss experimental results for hardening complex shaped materials by using our simplified nitriding.

  11. Bright nitriding of Cr-Mo-steels in plasma and gas

    SciTech Connect

    Larisch, B.; Spies, H.J.; Hoeck, K.

    1995-12-31

    Although the reduction of the white layer in special gas atmospheres directly after nitriding and bright nitriding were reported a long time ago, the white layer is mostly removed by mechanical or chemical means in industrial practice. The main reason for this is poor process control. However, new requirements such as the duplex treatment (nitriding + hardcoating), demand a more detailed examination of bright nitriding. Today, new possibilities exist for process control in gas nitriding by solid electrolyte sensors. Steel grades 17CrMoV10 and 31CrMoV9 were bright nitrided in gas and plasma. In contrast to the above experiments, in the two-step technology no white layer forms in the first step (20min) at a higher nitriding potential. By this, the formation of a soft surface layer (of iron) can be avoided. Limits of this technology--for instance in the depth of the formed nitrided case--are discussed. Reasons for the often discussed faster nitriding in plasma are explained on the basis of the experimental results. The influence of ion bombardment in plasma nitriding on the activation of the surface and the nitriding results is discussed in comparison to gas nitriding. In this context the advantages of plasma nitriding--with respect to higher chromium alloyed steels (>5%Cr), which tend to passivation--are shown.

  12. Energy Balance in DC Arc Plasma Melting Furnace

    NASA Astrophysics Data System (ADS)

    Zhao, Peng; Meng, Yuedong; Yu, Xinyao; Chen, Longwei; Jiang, Yiman; Ni, Guohua; Chen, Mingzhou

    2009-04-01

    In order to treat hazardous municipal solid waste incinerator's (MSWI) fly ash, a new DC arc plasma furnace was developed. Taking an arc of 100 V/1000 A DC as an example, the heat transfer characteristics of the DC arc plasma, ablation of electrodes, heat properties of the fly ash during melting, heat transfer characteristics of the flue gas, and heat loss of the furnace were analyzed based on the energy conservation law, so as to achieve the total heat information and energy balance during plasma processing, and to provide a theoretical basis for an optimized design of the structure and to improve energy efficiency.

  13. Synthesis of silicon nitride particles in pulsed Rf plasmas

    SciTech Connect

    Buss, R.J.; Babu, S.V.

    1995-11-01

    Silicon nitride (hydrogenated) particles are synthesized using a pulsed 13.56 Mhz glow discharge. The plasma is modulated with a square-wave on/off cycle of varying period to study the growth kinetics. In situ laser light scattering and ex situ particle analysis are used to study the nucleation and growth. For SiH{sub 4}/Ar and SiH{sub 4}/NH{sub 3} plasmas, an initial very rapid growth phase is followed by slower growth, approaching the rate of thin film deposition on adjacent flat surfaces. The average particle size can be controlled in the 10-100 nm range by adjusting the plasma-on time. The size dispersion of the particles is large and is consistent with a process of continuous nucleation during the plasma-on period. The large polydispersity is also reported for silicon particles from silane and differs from that reported in other laboratories. The silicon nitride particle morphology is compared to that of silicon and silicon carbide particles generated by the same technique. Whereas Si particles appear as rough clusters of smaller subunits, the SiC particles are smooth spheres, and the Si{sub 3}N{sub 4} particles are smooth but non-spherical. Post-plasma oxidation kinetics of the particles are studied with FTIR and are consistent with a hydrolysis mechanism proposed in earlier work with continuous plasmas. Heat treatment of the powder in an ammonia atmosphere results in the elimination of hydrogen, rendering the silicon nitride resistant to atmospheric oxidation.

  14. Nitriding molybdenum: Effects of duration and fill gas pressure when using 100-Hz pulse DC discharge technique

    NASA Astrophysics Data System (ADS)

    Ikhlaq, U.; R., Ahmad; Shafiq, M.; Saleem, S.; S. Shah, M.; Hussain, T.; A. Khan, I.; K., Abbas; S. Abbas, M.

    2014-10-01

    Molybdenum is nitrided by a 100-Hz pulsed DC glow discharge technique for various time durations and fill gas pressures to study the effects on the surface properties of molybdenum. X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) are used for the structural and morphological analysis of the nitrided layers. Vickers' microhardness tester is utilized to investigate surface microhardness. Phase analysis shows the formation of more molybdenum nitride molecules for longer nitriding durations at fill gas pressures of 2 mbar and 3 mbar (1 bar = 105 Pa). A considerable increase in surface microhardness (approximately by a factor of 2) is observed for longer duration (10 h) and 2-mbar pressure. Longer duration (10 h) and 2-mbar fill gas pressure favors the formation of homogeneous, smooth, hard layers by the incorporation of more nitrogen.

  15. Synthesis of silicon nitride particles in pulsed radio frequency plasmas

    SciTech Connect

    Buss, R.J.; Babu, S.V.

    1996-03-01

    Silicon nitride (hydrogenated) particles are synthesized using a pulsed 13.56 MHz glow discharge. The plasma is modulated with a square-wave on/off cycle of varying period to study the growth kinetics. {ital In} {ital situ} laser light scattering and {ital ex} {ital situ} particle analysis are used to study the nucleation and growth. For SiH{sub 4}/Ar and SiH{sub 4}/NH{sub 3} plasmas, an initial very rapid growth phase is followed by slower growth, approaching the rate of thin film deposition on adjacent flat surfaces. The average particle size can be controlled in the 10{endash}100 nm range by adjusting the plasma-on time. The size dispersion of the particles is large and is consistent with a process of continuous nucleation during the plasma-on period. The large polydispersity is also reported for silicon particles from silane and differs from that reported in other laboratories. The silicon nitride particle morphology is compared to that of silicon and silicon carbide particles generated by the same technique. Whereas Si particles appear as rough clusters of smaller subunits, the SiC particles are smooth spheres, and the Si{sub 3}N{sub 4} particles are smooth but nonspherical. Postplasma oxidation kinetics of the particles are studied with Fourier transform infrared spectra and are consistent with a hydrolysis mechanism proposed in earlier work with continuous plasmas. Heat treatment of the powder in an ammonia atmosphere results in the elimination of hydrogen, rendering the silicon nitride resistant to atmospheric oxidation. {copyright} {ital 1996 American Vacuum Society}

  16. Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

    SciTech Connect

    Kutsuki, Katsuhiro; Okamoto, Gaku; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2007-10-15

    We have investigated the stability of amorphous germanium nitride (Ge{sub 3}N{sub 4}) layers formed by plasma nitridation of Ge(100) surfaces using x-ray photoelectron spectroscopy and atomic force microscopy. We have found that humidity in the air accelerates the degradation of Ge{sub 3}N{sub 4} layers and that under 80% humidity condition, most of the Ge-N bonds convert to Ge-O bonds, producing a uniform GeO{sub 2} layer, within 12 h even at room temperature. After this conversion of nitrides to oxides, the surface roughness drastically increased by forming GeO{sub 2} islands on the surfaces. These findings indicate that although Ge{sub 3}N{sub 4} layers have superior thermal stability compared to the GeO{sub 2} layers, Ge{sub 3}N{sub 4} reacts readily with hydroxyl groups and it is therefore essential to take the best care of the moisture in the fabrication of Ge-based devices with Ge{sub 3}N{sub 4} insulator or passivation layers.

  17. Caracterisation of Titanium Nitride Layers Deposited by Reactive Plasma Spraying

    NASA Astrophysics Data System (ADS)

    Roşu, Radu Alexandru; Şerban, Viorel-Aurel; Bucur, Alexandra Ioana; Popescu, Mihaela; Uţu, Dragoş

    2011-01-01

    Forming and cutting tools are subjected to the intense wear solicitations. Usually, they are either subject to superficial heat treatments or are covered with various materials with high mechanical properties. In recent years, thermal spraying is used increasingly in engineering area because of the large range of materials that can be used for the coatings. Titanium nitride is a ceramic material with high hardness which is used to cover the cutting tools increasing their lifetime. The paper presents the results obtained after deposition of titanium nitride layers by reactive plasma spraying (RPS). As deposition material was used titanium powder and as substratum was used titanium alloy (Ti6Al4V). Macroscopic and microscopic (scanning electron microscopy) images of the deposited layers and the X ray diffraction of the coatings are presented. Demonstration program with layers deposited with thickness between 68,5 and 81,4 μm has been achieved and presented.

  18. PIII Plasma Density Enhancement by a New DC Power Source

    SciTech Connect

    Lopez-Callejas, R.; Godoy-Cabrera, O. G.; Granda-Gutierrez, E. E.; Piedad-Beneitez, A. de la; Munoz-Castro, A. E.; Valencia A, R.; Barocio, S. R.; Mercado-Cabrera, A.; Pena-Eguiluz, R.

    2006-12-04

    In practical terms, those plasmas produced by a DC voltage power supply do not attain densities above the 108 to 109 cm-3 band. Here we present a power supply, controlled in current and voltage, which has been successfully designed and constructed delivering plasma densities in the orders of 109 - 1010 cm-3. Its experimental performance test was conducted within one toroidal and one cylindrical chambers capable of 29 and 35 litres, respectively, using nitrogen gas. The DC plasma was characterized by a double electric probe. Several physical phenomena present in the PIII process have been keenly investigated including plasma sheath dynamics, interaction of plasma and surface, etc. In this paper we analyze the effect of the implantation voltage, plasma density and pulse time in the PIII average heating power and fluence density.

  19. Microstructure and antibacterial properties of microwave plasma nitrided layers on biomedical stainless steels

    NASA Astrophysics Data System (ADS)

    Lin, Li-Hsiang; Chen, Shih-Chung; Wu, Ching-Zong; Hung, Jing-Ming; Ou, Keng-Liang

    2011-06-01

    Nitriding of AISI 303 austenitic stainless steel using microwave plasma system at various temperatures was conducted in the present study. The nitrided layers were characterized via scanning electron microscopy, glancing angle X-ray diffraction, transmission electron microscopy and Vickers microhardness tester. The antibacterial properties of this nitrided layer were evaluated. During nitriding treatment between 350 °C and 550 °C, the phase transformation sequence on the nitrided layers of the alloys was found to be γ → (γ + γ N) → (γ + α + CrN). The analytical results revealed that the surface hardness of AISI 303 stainless steel could be enhanced with the formation of γ N phase in nitriding process. Antibacterial test also demonstrated the nitrided layer processed the excellent antibacterial properties. The enhanced surface hardness and antibacterial properties make the nitrided AISI 303 austenitic stainless steel to be one of the essential materials in the biomedical applications.

  20. Band gap effects of hexagonal boron nitride using oxygen plasma

    SciTech Connect

    Sevak Singh, Ram; Leong Chow, Wai; Yingjie Tay, Roland; Hon Tsang, Siu; Mallick, Govind; Tong Teo, Edwin Hang

    2014-04-21

    Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.

  1. Ion nitriding; Proceedings of the International Conference, Cleveland, OH, Sept. 15-17, 1986

    NASA Technical Reports Server (NTRS)

    Spalvins, T. (Editor)

    1987-01-01

    The present conference discusses plasma-assisted surface coating/modification processes, the applications to date of ion nitriding, the effects of nitrogen on metal surfaces, ion nitriding mechanisms in Cr, Al and Cr + Al-containing 1040 steel, ion nitriding of Al and its alloys, life enhancement for forging dies, novel anode plasma nitriding developments, and a comparative study of the pulsed and dc ion-nitriding behavior in specimens with blind holes. Also discussed are the influence of heating method on ion nitriding, surface hardening of marage steels by ion nitriding without core hardness reduction, plasma nitriding of nodular cast iron sput gears, NbN composites for superconductors, the carburization of tungsten in a glow discharge methane plasma, economic considerations concerning plasma nitriding, and the corrosion properties obtained by ion nitriding.

  2. Synthesis of silicon nanotubes by DC arc plasma method

    SciTech Connect

    Tank, C. M.; Bhoraskar, S. V.; Mathe, V. L.

    2012-06-05

    Plasma synthesis is a novel technique of synthesis of nanomaterials as they provide high rate of production and promote metastable reactions. Very thin walled silicon nanotubes were synthesized in a DC direct arc thermal plasma reactor. The effect of parameters of synthesis i.e. arc current and presence of hydrogen on the morphology of Si nanoparticles is reported. Silicon nanotubes were characterized by Transmission Electron Microscopy (TEM), Local Energy Dispersive X-ray analysis (EDAX), and Scanning Tunneling Microscopy (STM).

  3. Microstructure of boron nitride coated on nuclear fuels by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Durmazuçar, Hasan H.; Gündüz, Güngör; Toker, Canan

    1998-08-01

    Three nuclear fuels, pure urania, 5% and 10% gadolinia containing fuels were coated with boron nitride to improve nuclear and physical properties. Coating was done by plasma enhanced chemical vapor deposition technique by using boron trichloride and ammonia. The specimens were examined under a scanning electron microscope. Boron nitride formed a grainy structure on all fuels. Gadolinia decreased the grain size of boron nitride. The fractal dimensions of fragmentation and of area-perimeter relation were determined.

  4. Improving electrochemical properties of AISI 1045 steels by duplex surface treatment of plasma nitriding and aluminizing

    NASA Astrophysics Data System (ADS)

    Haftlang, Farahnaz; Habibolahzadeh, Ali; Sohi, Mahmoud Heydarzadeh

    2015-02-01

    Improvement in electrochemical behavior of AISI 1045 steel after applying aluminum nitride coating was investigated in 3.5% NaCl solution, using potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) analyses. Aluminum nitride coating was applied on the steel surface by duplex treatment of pack aluminizing and plasma nitriding. Some specimens were plasma nitrided followed by aluminizing (PN-Al), while the others were pack aluminized followed by plasma nitriding (Al-PN). Topological and structural studies of the modified surfaces were conducted using scanning electron microscope (SEM) equipped by energy dispersive X-ray spectroscope (EDS), and X-ray diffractometer (XRD). The electrochemical measurements showed that the highest corrosion and polarization (Rp) resistances were obtained in PN-Al specimens, having single phase superficial layer of AlN. Pitting mechanism was dominant reason of lower corrosion resistance in the Al-PN specimens.

  5. Analysis and experiments on thermal plasma processing for ultrafine powder synthesis of aluminium nitride

    SciTech Connect

    Ahn, H.; Hur, M.; Hong, S.H.

    1996-12-31

    Plasma synthesis experiments for producing ultrafine powders of aluminum nitride (AlN) are carried out using a non-transferred dc plasma torch of which jet flame can vaporize the aluminum powders injected into it to make the chemical reaction with nitrogen gas. For predicting the optimum processing parameters (the size, injected location and velocity of Al powders, and the ratio of nitrogen to argon arc gases), the trajectory and the evaporation state of an Al particle arc found by solving momentum and heat transfer equations. In addition, equilibrium chemical compositions are analyzed by the Gibbs free-energy minimization method to know the temperatures at which AlN synthesis occurs dominantly. A synthesis system consisting of a plasma torch, a reactor and a quenching chamber has been built for synthesis and quenching process of ultrafine powders of AlN. A fully-saturated fractional factorial test is employed to determine optimum process conditions for input power to the torch and flow rates of arc, carrier and reaction gases.

  6. Dust structurization observed in a dc glow discharge dusty plasma

    NASA Astrophysics Data System (ADS)

    Heinrich, Jonathon R.; Kim, Su-Hyun; Merlino, Robert L.

    2010-11-01

    Dusty plasmas, which are inherently open systems which require an ionization source to replenish the plasma absorbed on the grains, tend to exhibit self-organization. Various structures have been observed in dusty plasmas such as dust crystals, voids, and vortices. Due to the presence of drifting ions in dc discharge plasmas, spontaneously excited dust acoustic waves are also a common occurrence. By adjusting the discharge parameters we have observed a new phenomenon in dusty plasmas -- the spontaneous formation of three-dimensional stationary dust density structures. These structures appear as an ordered pattern consisting of alternating regions of high and low dust density arranged in a nested bowl-type configuration The stationary structure evolves from dust density waves that slow down as their wavelength decreases and eventually stop moving when the wavelength reaches some minimum size.

  7. Effect of plasma nitriding treatment on structural, tribological and electrochemical properties of commercially pure titanium.

    PubMed

    Çelik, İlhan; Karakan, Mehmet

    2016-02-01

    In this study, plasma nitriding treatment was applied to commercially pure titanium (Grade 2). Structural properties, electrochemical and tribological behaviours of the nitrided pure titanium specimens were comparatively investigated. Microstructure and morphology of the plasma nitrided specimens were analysed by X-ray diffraction and scanning electron microscopy. Furthermore, corrosion tests were conducted in Ringer's solution, which represents a human body environment, to determine electrochemical properties. Then, tribological and frictional properties were investigated using pin-on-disc tribometer, and a micro-hardness tester was used to measure the hardness of the coatings. The results showed that plasma nitrided specimens exhibited higher surface hardness than the untreated specimens did. In addition, the plasma nitrided specimens at 700 °C presented significantly better performance than the other plasma nitrided specimens (at 500 °C and 600 °C) under dry wear conditions. Moreover, corrosion test results showed that corrosion behaviours of untreated and nitrided samples had similar characteristic. PMID:26666885

  8. dc-plasma-sprayed electronic-tube device

    DOEpatents

    Meek, T.T.

    1982-01-29

    An electronic tube and associated circuitry which is produced by dc plasma arc spraying techniques is described. The process is carried out in a single step automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

  9. Mechanical properties and biocompatibility of plasma-nitrided laser-cut 316L cardiovascular stents.

    PubMed

    Arslan, Erdem; Iğdil, Mustafa C; Yazici, Hilal; Tamerler, Candan; Bermek, Hakan; Trabzon, Levent

    2008-05-01

    The effect of surface modification of laser-cut 316L cardiovascular stents by low-T plasma nitriding was evaluated in terms of mechanical properties and biocompatibility of the stents. The plasma nitriding was performed at 400, 450 or 500 degrees C using various ratios of nitrogen-hydrogen gas mixtures. The flexibility and radial strength were measured in crimped and expanded state of the stents, respectively. The mechanical properties could be adjusted and improved by plasma nitriding conducted at temperatures lower than 450 degrees C and/or nitrogen content less than 10% in the treatment gas. An osteoblast cell culture model system was utilized to investigate the effect of plasma nitriding of the stents on the biological response towards the stents, using biological criteria such as cell viability, alkaline phosphatase and nitric oxide production. In terms of cell viability and alkaline phosphatase production, the plasma nitriding procedure did not appear to negatively affect the biocompatibility of the 316L steel stents. However, in terms of nitric oxide production that was slightly increased in the presence of the plasma-nitrided stents, an indirect improvement in the biocompatibility could possibly be expected. PMID:17968502

  10. Diagnostics of DC plasma jets generated with Laval anodes

    SciTech Connect

    Rahmane, M.; Soucy, G.; Boulos, M.I.; Henne, R.

    1995-12-31

    Plasma jets originating from d.c. torches equipped with Laval nozzles are considered to be more efficient for both vacuum and atmospheric plasma spraying than those generated with the standard cylindrical anodes. The present study is devoted to the measurement of the temperature and velocity fields in plasma jets resulting from three different nozzles: a cylindrical and two Laval anodes with nominal Mach numbers of 2.5 and 3. The enthalpy probe and emission spectroscopy techniques are used for this purpose. Attention is given to the effect of the chamber pressure on the distribution of the temperature and velocity fields. The results show that when Laval nozzles are used at reduced chamber pressure (200 torr), the jets are wider, with higher temperature and velocity values in the central regions, compared to those obtained using cylindrical anodes. These characteristics are expected to improve the results of plasma spraying processes with respect to the layer quality and deposition efficiency.

  11. Structure and properties of nitrided surface layer produced on NiTi shape memory alloy by low temperature plasma nitriding

    NASA Astrophysics Data System (ADS)

    Czarnowska, Elżbieta; Borowski, Tomasz; Sowińska, Agnieszka; Lelątko, Józef; Oleksiak, Justyna; Kamiński, Janusz; Tarnowski, Michał; Wierzchoń, Tadeusz

    2015-04-01

    NiTi shape memory alloys are used for bone and cardiological implants. However, on account of the metallosis effect, i.e. the release of the alloy elements into surrounding tissues, they are subjected to various surface treatment processes in order to improve their corrosion resistance and biocompatibility without influencing the required shape memory properties. In this paper, the microstructure, topography and morphology of TiN surface layer on NiTi alloy, and corrosion resistance, both before and after nitriding in low-temperature plasma at 290 °C, are presented. Examinations with the use of the potentiodynamic and electrochemical impedance spectroscopy methods were carried out and show an increase of corrosion resistance in Ringer's solution after glow-discharge nitriding. This surface titanium nitride layer also improved the adhesion of platelets and the proliferation of osteoblasts, which was investigated in in vitro experiments with human cells. Experimental data revealed that nitriding NiTi shape memory alloy under low-temperature plasma improves its properties for bone implant applications.

  12. Low Temperature Plasma Nitriding Of Stainless Steel In N_2/H_2/Ar LFICP Discharges

    NASA Astrophysics Data System (ADS)

    Xu, S.; Luo, W.; Jiang, N.; Ostrikov, K. N.

    2001-10-01

    A low frequency, high density, inductively coupled plasma (LF ICP) source has been developed and used for nitriding of AISI stainless steels. A series of experiments has been conducted in a low temperature (320-400^circC), low pressure N_2/H_2/Ar gas mixture discharges. The results show that the nitriding process is very fast, ~ 45μm/hr for AISI 304 and ~ 90μm/hr for AIS410, even at a low nitriding temperature. After nitriding, the micro hardness of the nitrided layer is increased by a factor of 7 and the free corrosion potential is also improved. The pin-on-disc measurement indicates that the wear resistance improved more than 10 times. The microstructure and composition of the nitrided surface layers characterised using scanning electron microscopy/energy dispersive x-ray diffraction and x-ray diffraction reveal that the nitrided layer has crystalline structure with various phases. The distribution of the nitrogen content varies sharply: high in the nitrided layer and almost zero elsewhere. The content of Cr, however, remains constant over the entire substrate/nitrided layer.

  13. The effect of gas mixture of post-oxidation on structure and corrosion behavior of plasma nitrided AISI 316 stainless steel

    NASA Astrophysics Data System (ADS)

    Karimzadeh, N.; Moghaddam, E. G.; Mirjani, M.; Raeissi, K.

    2013-10-01

    In this research, microstructure and corrosion properties of plasma nitriding and post-oxidation treated AISI 316 austenitic stainless steel have been studied. The plasma nitriding treatment was carried out at 450 °C for 5 h in a D.C. plasma setup with a gas mixture of 25% N2-75% H2 followed by post-oxidation in gas mixtures of O2/H2: 1/3, 1/5, 1/9 and 1/12 for 30 min. The treated samples were characterized by SEM, XRD and roughness testing. Potentiodynamic and cyclic polarization tests were also employed to evaluate the corrosion resistance of the samples. The results showed that plasma nitriding treatment decreases corrosion resistance of the steel substrate. However, post-oxidizing treatment improves both uniform and pitting corrosion resistances of the nitrided specimens. This effect was most pronounced by post-oxidizing at lower O2/H2 ratios due to the development of magnetite as a more dense oxide phase over the modified layer.

  14. Corrosion resistance of zirconium oxynitride coatings deposited via DC unbalanced magnetron sputtering and spray pyrolysis-nitriding

    NASA Astrophysics Data System (ADS)

    Cubillos, G. I.; Bethencourt, M.; Olaya, J. J.

    2015-02-01

    ZrOxNy/ZrO2 thin films were deposited on stainless steel using two different methods: ultrasonic spray pyrolysis-nitriding (SPY-N) and the DC unbalanced magnetron sputtering technique (UBMS). Using the first method, ZrO2 was initially deposited and subsequently nitrided in an anhydrous ammonia atmosphere at 1023 K at atmospheric pressure. For UBMS, the film was deposited in an atmosphere of air/argon with a Φair/ΦAr flow ratio of 3.0. Structural analysis was carried out through X-ray diffraction (XRD), and morphological analysis was done through scanning electron microscopy (SEM) and atomic force microscopy (AFM). Chemical analysis was carried out using X-ray photoelectron spectroscopy (XPS). ZrOxNy rhombohedral polycrystalline film was produced with spray pyrolysis-nitriding, whereas using the UBMS technique, the oxynitride films grew with cubic Zr2ON2 crystalline structures preferentially oriented along the (2 2 2) plane. Upon chemical analysis of the surface, the coatings exhibited spectral lines of Zr3d, O1s, and N1s, characteristic of zirconium oxynitride/zirconia. SEM analysis showed the homogeneity of the films, and AFM showed morphological differences according to the deposition technique of the coatings. Zirconium oxynitride films enhanced the stainless steel's resistance to corrosion using both techniques. The protective efficacy was evaluated using electrochemical techniques based on linear polarization (LP). The results indicated that the layers provide good resistance to corrosion when exposed to chloride-containing media.

  15. The effect of plasma-nitrided titanium surfaces on osteoblastic cell adhesion, proliferation, and differentiation.

    PubMed

    Ferraz, Emanuela P; Sa, Juliana C; de Oliveira, Paulo T; Alves, Clodomiro; Beloti, Marcio M; Rosa, Adalberto L

    2014-04-01

    In this study, we evaluated the effect of new plasma-nitrided Ti surfaces on the progression of osteoblast cultures, including cell adhesion, proliferation and differentiation. Ti surfaces were treated using two plasma-nitriding protocols, hollow cathode for 3 h (HC 3 h) and 1 h (HC 1 h) and planar for 1 h. Untreated Ti surfaces were used as control. Cells derived from human alveolar and rat calvarial bones were cultured on Ti surfaces for periods of up to 14 days and the following parameters were evaluated: cell morphology, adhesion, spreading and proliferation, alkaline phosphatase (ALP) activity, extracellular matrix mineralization, and gene expression of key osteoblast markers. Plasma-nitriding treatments resulted in Ti surfaces with distinct physicochemical characteristics. The cell adhesion and ALP activity were higher on plasma-nitrided Ti surfaces compared with untreated one, whereas cell proliferation and extracellular matrix mineralization were not affected by the treatments. In addition, the plasma-nitrided Ti surfaces increased the ALP, reduced the osteocalcin and did not affect the Runx2 gene expression. We have shown that HC 3 h and planar Ti surfaces slightly favored the osteoblast differentiation process, and then these surfaces should be considered for further investigation using preclinical models. PMID:23625878

  16. Fluorination of polymethylmethaacrylate with tetrafluoroethane using DC glow discharge plasma

    NASA Astrophysics Data System (ADS)

    Guruvenket, S.; Iyer, Ganjigunte R. S.; Shestakova, Larisa; Morgen, Per; Larsen, N. B.; Mohan Rao, G.

    2008-07-01

    Fluorination of polymer surfaces has technological applications in various fields such as microelectronics, biomaterials, textile, packing, etc. In this study PMMA surfaces were fluorinated using DC glow discharge plasma. Tetrafluoroethane was used as the fluorinating agent. On the fluorinated PMMA surface, static water contact angle, surface energy, optical transmittance (UV-vis), XPS and AFM analyses were carried out. After the fluorination PMMA surface becomes hydrophobic with water contact angle of 107° without losing optical transparency. Surface energy of fluorine plasma-treated PMMA decreased from 35 mJ/cm 2 to 21.2 mJ/cm 2. RMS roughness of the fluorinated surface was 4.01 nm and XPS studies revealed the formation of C-CF x and CF 3 groups on the PMMA surface.

  17. Improvement of corrosion resistance of nitrided low alloy steel by plasma post-oxidation

    NASA Astrophysics Data System (ADS)

    Li, Yang; Wang, Liang; Zhang, Dandan; Shen, Lie

    2010-04-01

    Post-oxidizing treatments can be performed to improve the corrosion resistance of nitrided steel samples. In this paper, plasma nitriding treatments were performed at 540 °C for 4 h using ammonia as the working gas, and plasma post-oxidizing treatments were carried out at temperatures ranging from 350 °C to 500 °C for 2 h in oxygen gas. The treated samples were characterized by using optical microscopy, SEM, XRD, and electrochemical polarization. The X-ray analysis revealed the formation of iron-nitride phases of ɛ-Fe 2-3N and γ'-Fe 4N during plasma nitriding and iron oxide phases of hematite (Fe 2O 3) and magnetite (Fe 3O 4) through the post-oxidizing treatment. In particular, it was found that the very thin magnetite layer 0.8-1.5 μm in thickness on top of the compound layer was obtained by plasma post-oxidized at 400 °C and 450 °C. It was also demonstrated that the corrosion characteristics of the nitrided compound layer were further improved by post-oxidation treatment.

  18. Sulfide Stress Cracking and Electrochemical Corrosion of Precipitation Hardening Steel After Plasma Oxy-Nitriding

    NASA Astrophysics Data System (ADS)

    Granda-Gutiérrez, E. E.; Díaz-Guillén, J. C.; Díaz-Guillén, J. A.; González, M. A.; García-Vázquez, F.; Muñóz, R.

    2014-11-01

    In this paper, we present the results of a duplex plasma nitriding followed by an oxidizing stage process (which is also referred as oxy-nitriding) on the corrosion behavior of a 17-4PH precipitation hardening stainless steel. The formation of both, expanded martensite (b.c.t. α'N-phase) and chromium oxide (type Cr2O3) in the subsurface of oxy-nitrided samples at specific controlled conditions, leads in a noticeable increasing in the time-to-rupture during the sulfide stress cracking test, in comparison with an untreated reference sample. Oxy-nitriding improves the corrosion performance of the alloy when it is immersed in solutions saturated by sour gas, which extends the application potential of this type of steel in the oil and gas extraction and processing industry. The presence of the oxy-nitrided layer inhibits the corrosion process that occurs in the near-surface region, where hydrogen is liberated after the formation of iron sulfides, which finally produces a fragile fracture by micro-crack propagation; the obtained results suggest that oxy-nitriding slows this process, thus delaying the rupture of the specimen. Moreover, oxy-nitriding produces a hard, sour gas-resistant surface, but do not significantly affect the original chloride ion solution resistance of the material.

  19. Sulfide Stress Cracking and Electrochemical Corrosion of Precipitation Hardening Steel After Plasma Oxy-Nitriding

    NASA Astrophysics Data System (ADS)

    Granda-Gutiérrez, E. E.; Díaz-Guillén, J. C.; Díaz-Guillén, J. A.; González, M. A.; García-Vázquez, F.; Muñóz, R.

    2014-09-01

    In this paper, we present the results of a duplex plasma nitriding followed by an oxidizing stage process (which is also referred as oxy-nitriding) on the corrosion behavior of a 17-4PH precipitation hardening stainless steel. The formation of both, expanded martensite (b.c.t. α'N-phase) and chromium oxide (type Cr2O3) in the subsurface of oxy-nitrided samples at specific controlled conditions, leads in a noticeable increasing in the time-to-rupture during the sulfide stress cracking test, in comparison with an untreated reference sample. Oxy-nitriding improves the corrosion performance of the alloy when it is immersed in solutions saturated by sour gas, which extends the application potential of this type of steel in the oil and gas extraction and processing industry. The presence of the oxy-nitrided layer inhibits the corrosion process that occurs in the near-surface region, where hydrogen is liberated after the formation of iron sulfides, which finally produces a fragile fracture by micro-crack propagation; the obtained results suggest that oxy-nitriding slows this process, thus delaying the rupture of the specimen. Moreover, oxy-nitriding produces a hard, sour gas-resistant surface, but do not significantly affect the original chloride ion solution resistance of the material.

  20. Plasma nitriding using high H2 content gas mixtures for a cavitation erosion resistant steel

    NASA Astrophysics Data System (ADS)

    Allenstein, A. N.; Lepienski, C. M.; Buschinelli, A. J. A.; Brunatto, S. F.

    2013-07-01

    Plasma nitriding using high H2 content gas mixtures in CA-6NM martensitic stainless steel was studied in the present work. Nitriding was performed in H2 + N2 gas mixtures for 5, 10 and 20% N2, in volume, at 773 K (500 °C), during 2 h. Changes in the surface morphology and nitrided layer constitution were characterized by SEM, XRD, roughness analysis, and nanoindentation technique. Cavitation erosion behavior of the nitrided samples was also investigated by means of a 20 kHz ultrasonic vibrator. The study was emphasized for the three first cavitation stages (incubation, acceleration, and maximum erosion rate stage) of the cumulative erosion-time curve. Results indicate that the gas mixture nitrogen content strongly influences the phases' formation and its distribution on the nitrided layer. Better cavitation erosion resistance which was attributed to the finer and more homogeneous distribution of the nitrided layer phases was verified for samples treated at 5% N2. Otherwise, worse cavitation erosion behavior for samples nitrided at 20% N2 is supposed to be due to the formation of multiphase compound layer constituted by Fe4N + Fe2-3N + CrN, which can infer residual stress in treated surface.

  1. Behavior of incorporated nitrogen in plasma-nitrided silicon oxide formed by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Shinoda, Nao; Itokawa, Hiroshi; Fujitsuka, Ryota; Sekine, Katsuyuki; Onoue, Seiji; Tonotani, Junichi

    2016-04-01

    The behavior of nitrogen (N) atoms in plasma-nitrided silicon oxide (SiO2) formed by chemical vapor deposition (CVD) was characterized by physical analysis and from electrical properties. The changes in the chemical bonding and distribution of N in plasma-nitrided SiO2 were investigated for different subsequent processes. N-Si3, N-Si2O, and N2 are formed in a SiO2 film by plasma nitridation. N2 molecules diffuse out during annealing at temperatures higher than 900 °C. NH species are generated from N2 molecules and H in the SiO2 film with subsequent oxide deposition using O3 as an oxidant. The capacitance-voltage (C-V) curves of metal-oxide-semiconductor (MOS) capacitors are obtained. The negative shift of the C-V curve is caused by the increase in the density of positive fix charge traps in CVD-SiO2 induced by plasma nitridation. The C-V curve of plasma-nitrided SiO2 subjected to annealing shifts to the positive direction and that subjected to the subsequent oxide deposition shifts markedly to the negative direction. It is clarified that the density of positive charge fixed traps in plasma-nitrided SiO2 films decrease because the amount of N2 molecules is decreased by annealing, and that the density of traps increases because NH species are generated and move to the interface between SiO2 and the Si substrate with the subsequent oxide deposition.

  2. Plasma spheroidization of iron powders in a non-transferred DC thermal plasma jet

    SciTech Connect

    Kumar, S. Selvarajan, V

    2008-06-15

    In this paper, the results of plasma spheroidization of iron powders using a DC non-transferred plasma spray torch are presented. The morphology of the processed powders was characterized through scanning electron microscopy (SEM) and optical microscopy (OM). The percentages of spheroidized powders were calculated by the shape factors such as the Irregularity Parameter (IP) and Roundness (RN). A maximum of 83% of spheroidization can be achieved. The spheroidization results are compared with the theoretical estimation and they are found to be in good agreement. The phase composition of the spheroidized powder was analyzed by XRD. The effect of plasma jet temperature and plasma gas flow rate on spheroidization is discussed. At low plasma gas flow rates and at high plasma jet temperatures, the percentage of spheroidization is high.

  3. Structure and corrosive wear resistance of plasma-nitrided alloy steels in 3% sodium chloride solutions

    SciTech Connect

    Lee, C.K.; Shih, H.C. . Dept. of Materials Science and Engineering)

    1994-11-01

    Type 304 stainless steel (SS), type 410 SS, and type 4140 low-alloy steel were plasma nitrided in a commercial furnace at 560 C for 50 h. Microstructure and the composition of the nitrided layer were analyzed. The resistance to corrosive wear was evaluated by a tribotest in which the specimen was held under potentiostatic control at anodic and cathodic potentials in 3% sodium chloride solution (pH 6.8). Electrochemical polarization measurements were made, and the surface morphology and composition after corrosive wear were examined. Wear rates at cathodic potentials were very low, but significant weight losses were observed as the applied potentials were increased anodically. The coefficient of friction varied in a fashion similar to the wear rate. For the untreated alloys, the magnitude of the wear rate and coefficient of friction decreased as follows: type 4140 alloy > type 41 SS > type 304 SS. For the plasma-nitrided alloys, the ranking was: type 304 SS > type 410 SS. type 4140 alloy. Plasma nitriding was shown to be beneficial to the corrosive wear resistance of type 4140 alloy, but an adverse effect was obtained for types 304 and 410 SS. These findings could be interpreted in terms of the electrochemical polarization characteristics of a static specimen and were strongly related to the subtleties of the nitrided microstructures. The stable chromium nitride (CrN) segregated in the [gamma]-iron (type 304 SS) and [alpha]-Fe (type 41 SS) matrices and resulted in a pitting and spalling type of corrosive wear mechanism. The phases [epsilon]-(Fe, Cr)[sub 2-3]N and [gamma]-(Fe, Cr)[sub 4]N enriched in the surface layer of nitrided type 4140 alloy provided excellent corrosive wear resistance.

  4. Construction of a hybrid rf/dc discharge source for dusty plasma studies

    NASA Astrophysics Data System (ADS)

    Krupa, Justin; Williams, Jeremiah

    2014-10-01

    A complex (dusty) plasma is a four-component system composed of ions, electrons, neutral particles and charged microparticles. The presence of the microparticles gives rise to new plasma phenomena at time scales on the order of Hertz. Over the last several years, the Wittenberg University Plasma Laboratory has studied these dusty plasma systems in a dc discharge plasma. In this poster, we present work on a dual rf/dc hybrid discharge system to replace the dc glow discharge system currently in use. Details of the design and use of 3D printing in the construction will be presented. This work supported by National Science Foundation Grant Number PHY-0953595.

  5. Effects of various gas mixtures on plasma nitriding behavior of AISI 5140 steel

    SciTech Connect

    Karakan, Mehmet; Alsaran, Akguen; Celik, Ayhan

    2002-10-15

    AISI 5140 steel was plasma nitrided at various gas mixtures of nitrogen, hydrogen, and argon to investigate the actions of hydrogen and argon on plasma nitriding. The structural and mechanical properties of ion-nitrided AISI 5140 steel have been assessed by evaluating composition of phases, surface hardness, compound layer thickness, and case depth by using X-ray diffraction (XRD), microhardness tests, and scanning electron microscopy (SEM). It was found that the growth of compound layer can be controlled and the diffusion improved when the gas mixture includes H{sub 2} gas. Additionally, it was determined that the amount of Ar in dual gas mixture must be at 20% minimum to obtain distinctive surface hardness and compound layer thickness.

  6. Reactive Plasma Nitriding of AL2O3 Powder in Thermal Spray

    NASA Astrophysics Data System (ADS)

    Shahien, Mohammed; Yamada, Motohiro; Yasui, Toshiaki; Fukumoto, Masahiro

    Among advanced ceramics, aluminum nitride (AlN) had attracted much attention in the field of electrical and structural applications due to its outstanding properties. However, it is difficult to fabricate AlN coating by conventional thermal spray processes directly. Due to the thermal decomposition of feedstock AlN powder during spraying without a stable melting phase (which is required for deposition in thermal spray). Reactive plasma spraying (RPS) has been considered as a promising technology for in-situ formation of AlN thermally sprayed coatings. In this study the possibility of fabrication of AlN coating by reactive plasma nitriding of alumina (Al2O3) powder using N2/H2 plasma was investigated. It was possible to fabricate a cubic-AlN (c-AlN) based coating and the fabricated coating consists of c-AlN, α-Al2O3, Al5O6N and γ-Al2O3. It was difficult to understand the nitriding process from the fabricated coatings. Therefore, the Al2O3 powders were sprayed and collected in water. The microstructure observation of the collected powder and its cross section indicate that the reaction started from the surface. Thus, the sprayed particles were melted and reacted in high temperature reactive plasma and formed aluminum oxynitride which has cubic structure and easily nitride to c-AlN. During the coatings process the particles collide, flatten, and rapidly solidified on a substrate surface. The rapid solidification on the substrate surface due to the high quenching rate of the plasma flame prevents AlN crystal growth to form the hexagonal phase. Therefore, it was possible to fabricate c-AlN/Al2O3 based coatings through reactive plasma nitriding reaction of Al2O3 powder in thermal spray.

  7. Effect of Plasma Nitriding and Nitrocarburizing on HVOF-Sprayed Stainless Steel Coatings

    NASA Astrophysics Data System (ADS)

    Park, Gayoung; Bae, Gyuyeol; Moon, Kyungil; Lee, Changhee

    2013-12-01

    In this work, the effects of plasma nitriding (PN) and nitrocarburizing on HVOF-sprayed stainless steel nitride layers were investigated. 316 (austenitic), 17-4PH (precipitation hardening), and 410 (martensitic) stainless steels were plasma-nitrided and nitrocarburized using a N2 + H2 gas mixture and the gas mixture containing C2H2, respectively, at 550 °C. The results showed that the PN and nitrocarburizing produced a relatively thick nitrided layer consisting of a compound layer and an adjacent nitrogen diffusion layer depending on the crystal structures of the HVOF-sprayed stainless steel coatings. Also, the diffusion depth of nitrogen increased when a small amount of C2H2 (plasma nitrocarburizing process) was added. The PN and nitrocarburizing resulted in not only an increase of the surface hardness, but also improvement of the load bearing capacity of the HVOF-sprayed stainless steel coatings because of the formation of CrN, Fe3N, and Fe4N phases. Also, the plasma-nitrocarburized HVOF-sprayed 410 stainless steel had a superior surface microhardness and load bearing capacity due to the formation of Cr23C6 on the surface.

  8. Plasma chemistry and diagnostic in an Ar-N2-H2 microwave expanding plasma used for nitriding treatments

    NASA Astrophysics Data System (ADS)

    Touimi, S.; Jauberteau, J. L.; Jauberteau, I.; Aubreton, J.

    2010-05-01

    This paper reports on the mass spectrometry analysis performed downstream a microwave discharge in an Ar-N2-H2 gas mixture under nitriding conditions. Investigations are focused on the main simple radicals NH2, NH and N, and on the molecular species NH3 and N2H2 produced. Because of wall desorptions due to catalytic effects, we must develop a specific method taking into account both wall desorption and the dissociative ionization effects in order to correct the mass spectrometer signal intensity. The relative concentrations of the above-mentioned species are studied in various gas mixtures. Correlations are made between the plasma chemistry and the plasma parameters (electron density and energy electron distribution function), measured by means of a Langmuir probe spatially resolved within the plasma expansion. These results show the efficiency of ternary gas mixtures (Ar-N2-H2) in producing electrons and NxHy species used in plasma nitriding processes.

  9. Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

    NASA Astrophysics Data System (ADS)

    Tarala, V. A.; Altakhov, A. S.; Martens, V. Ya; Lisitsyn, S. V.

    2015-11-01

    Aluminum nitride films have been grown by Plasma-Enhanced Atomic Layer Deposition method. It was found that at temperatures of 250 °C and 280 °C increase of the plasma exposure step duration over 6 s, as well as increase of reactor purge step duration over 1 s does not affect the growth rate, however, it affects the microstructure of the films. It was found that crystalline aluminum nitride films deposit with plasma exposure duration over 10 s and the reactor purging over 10 s. When the temperature drops the increase of reactor purge step duration and plasma exposure step duration over 20 s is required for crystalline AlN film growth.

  10. Silicon nitride films deposited with an electron beam created plasma

    NASA Astrophysics Data System (ADS)

    Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

    1984-03-01

    The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

  11. Challenges Upon Reactive Plasma Spray Nitriding: Al Powders and Fabrication of AlN Coatings as a Case Study

    NASA Astrophysics Data System (ADS)

    Shahien, Mohammed; Yamada, Motohiro; Fukumoto, Masahiro

    2016-05-01

    Reactive plasma spraying (RPS) is a promising technology for the in situ formation of several ceramic coatings. The focus of this paper is to summarize the state of our current knowledge about the RPS process and using the nitriding of Al particles and the fabrication of aluminum nitride coatings, as a case study. The aspects and challenges in this process such as the influence of the plasma power, in-flight time, particle size, nitriding mechanism, splat morphology, in-flight particle diagnostics, N2 plasma gas, and the feeding rate on the RPS process are analyzed and discussed.

  12. Challenges Upon Reactive Plasma Spray Nitriding: Al Powders and Fabrication of AlN Coatings as a Case Study

    NASA Astrophysics Data System (ADS)

    Shahien, Mohammed; Yamada, Motohiro; Fukumoto, Masahiro

    2016-06-01

    Reactive plasma spraying (RPS) is a promising technology for the in situ formation of several ceramic coatings. The focus of this paper is to summarize the state of our current knowledge about the RPS process and using the nitriding of Al particles and the fabrication of aluminum nitride coatings, as a case study. The aspects and challenges in this process such as the influence of the plasma power, in-flight time, particle size, nitriding mechanism, splat morphology, in-flight particle diagnostics, N2 plasma gas, and the feeding rate on the RPS process are analyzed and discussed.

  13. Mesenchymal stem cell adhesion and spreading on microwave plasma-nitrided titanium alloy.

    PubMed

    Clem, William C; Konovalov, Valery V; Chowdhury, S; Vohra, Yogesh K; Catledge, Shane A; Bellis, Susan L

    2006-02-01

    Improved methods to increase surface hardness of metallic biomedical implants are being developed in an effort to minimize the formation of wear debris particles that cause local pain and inflammation. However, for many implant surface treatments, there is a risk of film delamination due to the mismatch of mechanical properties between the hard surface and the softer underlying metal. In this article, we describe the surface modification of titanium alloy (Ti-6Al-4V), using microwave plasma chemical vapor deposition to induce titanium nitride formation by nitrogen diffusion. The result is a gradual transition from a titanium nitride surface to the bulk titanium alloy, without a sharp interface that could otherwise lead to delamination. We demonstrate that vitronectin adsorption, as well as the adhesion and spreading of human mesenchymal stem cells to plasma-nitrided titanium is equivalent to that of Ti-6Al-4V, while hardness is improved 3- to 4-fold. These in vitro results suggest that the plasma nitriding technique has the potential to reduce wear, and the resulting debris particle release, of biomedical implants without compromising osseointegration; thus, minimizing the possibility of implant loosening over time. PMID:16265649

  14. Structural and magnetic characterization of plasma ion nitrided layer on 316L stainless steel alloy

    NASA Astrophysics Data System (ADS)

    Öztürk, O.; Okur, S.; Riviere, J. P.

    2009-05-01

    In this study, an FeCrNi alloy (316L stainless steel disc) was nitrided in a low-pressure R.F. plasma at 430 °C for 72 min under a gas mixture of 60% N2-40% H2. Structural, compositional and magnetic properties of the plasma nitrided layer was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and magnetic force microscopy (MFM). The magnetic behaviour of the nitrided layer was also investigated with a vibrating sample magnetometer (VSM). Combined X-ray diffraction, cross-sectional SEM, AFM and MFM, as well as VSM analyses provide strong evidence for the formation of the γN phase, [γN-(Fe, Cr, Ni)], with mainly ferromagnetic characteristics. The uniform nature of the γN layer is clearly demonstrated by the XRD, cross-sectional SEM and AFM analyses. Based on the AFM and SEM data, the thickness of the γN layer is found to be ∼6 μm. According to the MFM and VSM analyses, ferromagnetism in the γN layer is revealed by the observation of stripe domain structures and the hysteresis loops. The cross-sectional MFM results demonstrate the ferromagnetic γN phase distributed across the plasma nitrided layer. The MFM images show variation in the size and form of the magnetic domains from one grain to another.

  15. Mesenchymal stem cell adhesion and spreading on microwave plasma-nitrided titanium alloy

    PubMed Central

    Clem, William C.; Konovalov, Valery V.; Chowdhury, S.; Vohra, Yogesh K.; Catledge, Shane A.; Bellis, Susan L.

    2008-01-01

    Improved methods to increase surface hardness of metallic biomedical implants are being developed in an effort to minimize the formation of wear debris particles that cause local pain and inflammation. However, for many implant surface treatments, there is a risk of film delamination due to the mismatch of mechanical properties between the hard surface and the softer underlying metal. In this article, we describe the surface modification of titanium alloy (Ti-6Al-4V), using microwave plasma chemical vapor deposition to induce titanium nitride formation by nitrogen diffusion. The result is a gradual transition from a titanium nitride surface to the bulk titanium alloy, without a sharp interface that could otherwise lead to delamination. We demonstrate that vitronectin adsorption, as well as the adhesion and spreading of human mesenchymal stem cells to plasma-nitrided titanium is equivalent to that of Ti-6Al-4V, while hardness is improved 3- to 4-fold. These in vitro results suggest that the plasma nitriding technique has the potential to reduce wear, and the resulting debris particle release, of biomedical implants without compromising osseointegration; thus, minimizing the possibility of implant loosening over time. PMID:16265649

  16. Growth of cubic boron nitride on diamond particles by microwave plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Saitoh, H.; Yarbrough, W. A.

    1991-06-01

    The nucleation and growth of cubic boron nitride (c-BN) onto diamond powder using solid NaBH4 in low pressure gas mixtures of NH3 and H2 by microwave plasma enhanced chemical vapor deposition has been studied. Boron nitride was deposited on submicron diamond seed crystals scattered on (100) silicon single crystal wafers and evidence was found for the formation of the cubic phase. Diamond powder surfaces appear to preferentially nucleate c-BN. In addition, it was found that the ratio of c-BN to turbostratic structure boron nitride (t-BN) deposited increases with decreasing NH3 concentration in H2. It is suggested that this may be due to an increased etching rate for t-BN by atomic hydrogen whose partial pressure may vary with NH3 concentration.

  17. Deposition of titanium nitride and hydroxyapatite-based biocompatible composite by reactive plasma spraying

    NASA Astrophysics Data System (ADS)

    Roşu, Radu Alexandru; Şerban, Viorel-Aurel; Bucur, Alexandra Ioana; Dragoş, Uţu

    2012-02-01

    Titanium nitride is a bioceramic material successfully used for covering medical implants due to the high hardness meaning good wear resistance. Hydroxyapatite is a bioactive ceramic that contributes to the restoration of bone tissue, which together with titanium nitride may contribute to obtaining a superior composite in terms of mechanical and bone tissue interaction matters. The paper presents the experimental results in obtaining composite layers of titanium nitride and hydroxyapatite by reactive plasma spraying in ambient atmosphere. X-ray diffraction analysis shows that in both cases of powders mixtures used (10% HA + 90% Ti; 25% HA + 75% Ti), hydroxyapatite decomposition occurred; in variant 1 the decomposition is higher compared with the second variant. Microstructure of the deposited layers was investigated using scanning electron microscope, the surfaces presenting a lamellar morphology without defects such as cracks or microcracks. Surface roughness values obtained vary as function of the spraying distance, presenting higher values at lower thermal spraying distances.

  18. Effects of Electric Discharge Plasma Treatment on the Thermal Conductivity of Polymer-Metal Nitride/Carbide Composites

    NASA Astrophysics Data System (ADS)

    Parali, Levent; Kurbanov, Mirza A.; Bayramov, Azad A.; Tatardar, Farida N.; Sultanakhmedova, Ramazanova I.; Xanlar, Huseynova Gulnara

    2015-11-01

    High-density polymer composites with semiconductor or dielectric fillers such as aluminum nitride (AIN), aluminum oxide (Al2O3), titanium carbide (TiC), titanium nitride (TiN), boron nitride (BN), silicon nitride (Si3N4), and titanium carbonitride (TiCN) were prepared by the hot pressing method. Each powder phase of the composites was exposed to an electric discharge plasma process before composite formation. The effects of the electric discharge plasma process and the filler content (volume fraction) on the thermal conductivity, volt-ampere characteristics, thermally stimulated depolarization current, as well as electrical and mechanical strength were investigated. The results of the study indicate that, with increasing filler volume fraction, the thermal conductivity of the samples also increased. Furthermore, the thermal conductivity, and electrophysical and mechanical properties of the high-density polyethylene + 70% BN composite modified using the electric discharge plasma showed improvement when compared with that without electric discharge plasma treatment.

  19. Some Temperature Effects on AISI-304 Nitriding in an Inductively Coupled RF Plasma

    SciTech Connect

    Valencia-Alvarado, R.; Barocio, S. R.; Mercado-Cabrera, A.; Pena-Eguiluz, R.; Munoz-Castro, A. E.; Piedad-Beneitez, A. de la; Rosa-Vazquez, J. de la; Lopez-Callejas, R.; Godoy-Cabrera, O. G.

    2006-12-04

    Some recent results obtained from nitriding AISI 304 stainless steel samples, 1.2 cm in diameter and 0.5 cm thick are reported here in the case of an 85% hydrogen and 15% nitrogen mixture work gas. The process was carried out from 300 to 400 W for (13.56 MHz) inductively coupled plasma within a 60 cm long pyrex glass tube 3.5 cm in diameter where the samples were biased up to -300 V with respect to earth. The resulting hardness appears to be a function of the substrate temperature which varied from 200 deg. C at a 0 V bias to 550 deg. C at -300 V. The plasma density at 400 W reached 3x1010 cm-3 with a 4 eV electron temperature. Prior to nitriding, all the samples were polished with 0.05 {mu}m diamond paste, leading to a 30 nm average roughness (Ra). After nitriding at -300 V, the Ra rose until {approx}400 nm while hardness values of 1500 HV under 300 g loads were measured. X ray diffraction indicates that the extended phase amplitude ({gamma}N), Fe and Cr nitride depends on the substrate temperature.

  20. Fabrication of Aluminum Nitride Coatings by Reactive Plasma Spraying and Evaluation of Its Property

    NASA Astrophysics Data System (ADS)

    Yamada, Motohiro; Lee, Chaechul; Yasui, Toshiaki; Fukumoto, Masahiro; Takahashi, Koyata

    Aluminum nitride (AlN) has excellent properties such as high corrosion resistance, hardness and thermal conductivity. In this study, AlN coatings were fabricated by reactive plasma spraying by using Al-AlN mixed powder for feedstock. The optimal mixing ratio of Al-AlN particles and spray conditions were investigated. Al-AlN particles were injected into Ar/N2 plasma and were deposited onto graphite substrate. It was possible to fabricate the coatings using Al-10˜40 wt.%AlN powders for feedstock. Especially, using Al-20 wt.%AlN and Al-30 wt.%AlN powders enabled to fabricate dense coatings which consisted of almost completely AlN phase. The nitride phase concentration in the coatings was controlled by RF power and N2 gas flow rate in the plasma gas. Furthermore, it became clear that the hardness of the coatings depended on the nitride concentration in the coatings. The thermal conductivity of the coating was achieved 71.2 (W/m•K). Therefore, it was possible to fabricate AlN based coatings with high thermal conductivity by reactive plasma spraying by using Al-AlN mixed powder.

  1. Plasma surface interaction in hot filament cathode arc discharge used to nitride steel substrates

    NASA Astrophysics Data System (ADS)

    Dahiya, R. P.; Singh, O.; Aggarwal, V.; Malik, H. K.; Kumari, Nisha

    2012-10-01

    Plasma-assisted nitriding process is a well developed technique for increasing the surface hardness. The process is energy efficient, environment friendly and versatile to treat samples of various shapes and sizes. Though the use of this process in industry is established, there are several scientific questions in the basic understanding of the migration of ions, electrons and radicals and plasma surface interaction. We have studied these processes in an experimental system developed with hot cathode arc discharge plasma. A mixture of nitrogen and hydrogen is utilized for plasma generation. Negatively biased steel substrate is nitrided in this plasma. The hot cathode arc discharge plasma source is utilized to independently monitor and optimise the plasma and the work piece parameters. Substrate bias and temperature, which are the important parameters for achieving the desirable surface hardness, are regulated. Hardness depth profile and nitrogen content in the hardened sample are also measured. Transport and diffusion of ions, electrons, radicals and neutrals are considered to explain the results.

  2. The plasma dynamic synthesis of aluminum nitride in system with gaseous and solid precursors

    NASA Astrophysics Data System (ADS)

    Shanenkov, I.; Sivkov, A.; Ivashutenko, A.; Shanenkova, Yu

    2015-10-01

    Aluminum nitride is widely-used material for semiconductor devices and ceramics production. Despite the large number of known ways to obtain AlN powder, the problem of synthesizing high-purity and nanosized product is still urgent. This paper shows results on plasma dynamic synthesis of aluminum nitride using system based coaxial magneto plasma accelerator. The influence of using gaseous or solid precursors on such characteristics of the final product as phase content and particle size distribution was investigated. According to X- Ray diffractometry AlN phase content is increased in the case of use of solid nitrogen- containing precursor (melamine) in comparison with the use of gaseous nitrogen. The particle sizes distribution histograms are built in accordance with the data of bright-field TEM-images and shown in this paper. The most of particles are less than 100 nm in both experiment but there are some differences, depended on the precursor type, that are also described.

  3. TEM studies of plasma nitrided austenitic stainless steel.

    PubMed

    Stróz, D; Psoda, M

    2010-03-01

    Cross-sectional transmission electron microscopy and X-ray phase analysis were used to study the structure of a layer formed during nitriding the AISI 316L stainless steel at temperature 440 degrees C. It was found that the applied treatment led to the formation of 6-microm-thick layer of the S-phase. There is no evidence of CrN precipitation. The X-ray diffraction experiments proved that the occurred austenite lattice expansion - due to nitrogen atoms - depended on the crystallographic direction. The cross-sectional transmission electron microscopy studies showed that the layer consisted of a single cubic phase that contained a lot of defects such as dislocations, stacking faults, slip bands and twins. The high-resolution electron microscopy observations were applied to study the defect formation due to the nitriding process. It was shown that the presence of great number of stacking faults leads to formation of nanotwins. Weak, forbidden {100} reflections were still another characteristic feature of the S-phase. These were not detected in the X-ray spectra of the phase. Basing on the high-resolution electron microscopy studies it can be suggested that the short-range ordering of the nitrogen atoms in the octahedral sites inside the f.c.c. matrix lattice takes place and gives rise to appearance of these spots. It is suggested that the cubic lattice undergoes not only expansion but also slight rombohedral distortion that explains differences in the lattice expansion for different crystallographic directions. PMID:20500370

  4. Plasma-enhanced CVD silicon nitride antireflection coatings for solar cells

    NASA Technical Reports Server (NTRS)

    Johnson, C. C.; Wydeven, T.; Donohoe, K.

    1983-01-01

    Multilayer plasma-enhanced chemical vapor deposition (PECVD) silicon nitride antireflection coatings were deposited on space quality silicon solar cells. Preliminary experiments indicated that multilayer coatings decreased the total reflectance of polished silicon from 35 percent to less than 3 percent over the spectral range 0.4-1.0 micron. The solar cell energy conversion efficiency was increased from an average of 8.84 percent to an average of 12.63 percent.

  5. Effect of gas composition on corrosion behavior and growth of apatite on plasma nitrided titanium alloy Beta-21S

    NASA Astrophysics Data System (ADS)

    Mohan, L.; Anandan, C.

    2013-03-01

    Titanium alloy beta 21S with composition Ti-15Mo-3Nb-3Al-0.2Si was plasma nitrided using inductively coupled RF Plasma with 100% N2 and 80% N2-20% H2 at 800 °C for 4 h. XRD and micro Raman studies show the formation of titanium nitrides. Potentiodynamic polarization studies in Hank's solution show the corrosion resistance of the 80-20% (N2-H2) treated samples to be better than the 100% N2 treated samples. However, untreated samples show better corrosion resistance than the treated samples. Electrochemical impedance spectroscopy (EIS) studies show higher charge transfer resistance and lower double layer capacitance for the substrate compared to the nitrided samples. FESEM images of samples immersed in SBF show that growth of apatite is more and the size of deposits are larger on nitrided samples, especially on those nitrided with hydrogen dilution, as compared to that on the untreated substrate. EDS results show a decrease in nitrogen content and increase in oxygen content after corrosion experiments. XPS spectra from the nitrided and corrosion tested samples show the presence of oxide, nitride and oxynitride on the surface and after corrosion studies the samples are covered with oxide. Nitrided samples immersed in Hank's solution for one day show higher amount of calcium, phosphorous and oxygen in hydroxide form than the substrate.

  6. High-Density Plasma Etching of Group-III Nitride Films for Device Application

    SciTech Connect

    Baca, A.G.; Crawford, M.H.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-02-17

    As III-V nitride device structures become more complicated and design rules shrink, well-controlled etch processes are necessary. Due to limited wet chemical etch results for the group-III nitrides, a significant amount of effort has been devoted to the development of dry etch processing. Dry etch development was initially focused on mesa structures where high etch rates, anisotropic profiles, smooth sidewalls, and equi-rate etching of dissimilar materials were required. For example, commercially available LEDs and laser facets for GaN-based laser diodes have been patterned using reactive ion etching (RIE). With the recent interest in high power, high temperature electronic devices, etch characteristics may also require smooth surface morphology, low plasma-induced damage, and selective etching of one layer over another. The principal criteria for any plasma etch process is its utility in the fabrication of a device. In this study, we will report plasma etch results for the group-III nitrides and their application to device structures.

  7. Structure and properties of commercially pure titanium nitrided in the plasma of a low-pressure gas discharge produced by a PINK plasma generator

    NASA Astrophysics Data System (ADS)

    Ivanov, Yu F.; Akhmadeev, Yu H.; Lopatin, I. V.; Petrikova, E. A.; Krysina, V.; Koval, N. N.

    2015-11-01

    The paper analyzes the surface structure and properties of commercially pure VT1-0 titanium nitrided in the plasma of a low-pressure gas discharge produced by a PINK plasma generator. The analysis demonstrates that the friction coefficient of the nitrided material decreases more than four times and its wear resistance and microhardness increases more than eight and three times, respectively. The physical mechanisms responsible for the enhancement of strength and tribological properties of the material are discussed.

  8. Effect of pulsed plasma nitriding on mechanical and tribological performance of Ck45 steel.

    PubMed

    Rastkar, A R; Kiani, A; Alvand, F; Shokri, B; Amirzadeh, M

    2011-06-01

    We studied the mechanical properties and wear performance of AISI 1045 (Ck45) carbon steel under the influence of pulsed plasma nitriding. The treatments were performed at temperatures of 500 and 550 degrees C in N2:H2 gas ratios of 1:3 and 3:1 and the working pressure of 10 mbar for 1 to 4 hours. Samples were examined by X-ray diffraction, optical, electron and atomic force microscopy, microhardness tests, roughness measurements and wear tests. Nitride layers were mainly composed of epsilon-(Fe2-3N) or gamma'-(Fe4N) depending on the gas ratio and/or temperature and time. When the nitriding time is increased, the composition of the compound layer varies from monophase gamma'-(Fe4N) to the two phase of epsilon-(Fe2-3N) and gamma'-(Fe4N). The highest thickness and hardness of the layers were obtained at 550 degrees C in the N2:H2 gas ratios of 3:1 for 4 h. The topographical evolution and surface roughness of the samples showed that all the roughness parameters increase with increasing the temperature. The friction coefficient of all samples was higher than that of untreated material. Wear performance of all nitrided samples was significantly better than that of untreated material. PMID:21770190

  9. Reactive spark plasma sintering (SPS) of nitride reinforced titanium alloy composites

    SciTech Connect

    Borkar, Tushar; Nag, Soumya; Ren, Yang; Tiley, Jaimie; Banerjee, Rajarshi

    2014-12-25

    Coupled in situ alloying and nitridation of titanium–vanadium alloys, has been achieved by introducing reactive nitrogen gas during the spark plasma sintering (SPS) of blended titanium and vanadium elemental powders, leading to a new class of nitride reinforced titanium alloy composites. The resulting microstructure includes precipitates of the d-TiN phase with the NaCl structure, equiaxed (or globular) precipitates of a nitrogen enriched hcp a(Ti,N) phase with a c/a ratio more than what is expected for pure hcp Ti, and fine scale plate-shaped precipitates of hcp a-Ti, distributed within a bcc b matrix. During SPS processing, the d-TiN phase appears to form at a temperature of 1400 C, while only hcp a(Ti,N) and a-Ti phases form at lower processing temperatures. Consequently, the highest microhardness is exhibited by the composite processed at 1400 C while those processed at 1300 C or below exhibit lower values. Processing at temperatures below 1300 C, resulted in an incomplete alloying of the blend of titanium and vanadium powders. These d-TiN precipitates act as heterogeneous nucleation sites for the a(Ti,N) precipitates that appear to engulf and exhibit an orientation relationship with the nitride phase at the center. Furthermore, fine scale a-Ti plates are precipitated within the nitride precipitates, presumably resulting from the retrograde solubility of nitrogen in titanium.

  10. Influence of chromium content on corrosion of plasma-nitrided steels

    SciTech Connect

    Venkatesan, K.; Subramanian, C.; Green, L.K.; Strafford, K.N.

    1997-07-01

    Commercial steels with varying chromium contents were plasma nitrided for 25 h in a 70% nitrogen + 30% hydrogen gas atmosphere at 520 C under a pressure of 670 Pa. Steels tested included AISI types 4140, with 1% Cr (UNS G41400); H-13, with 5% Cr (UNS T20813); D-2, with 12% Cr (UNS T30402); and 431, with 16% Cr (UNS S43100). Surface layers obtained were characterized using optical microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and scanning electron microscopy with energy dispersive x-ray spectroscopy. Potentiodynamic polarization curves were obtained at room temperature (RT) on samples immersed in an aerated 0.05 M sodium sulfate solution of pH 3.0. Polarization tests were repeated at various depths beneath the surface after grinding successively with abrasives and finishing with 3-{micro}m diamond paste. Potential-vs-time graphs were recorded. Nitrided steels with up to and including 12% Cr showed an increase in corrosion resistance, whereas a decrease was observed for the 16% Cr steel compared to untreated samples. The nitrogen diffusion zones in all the steels studied exhibited reduced corrosion resistance compared to both the nitrided surface and to untreated specimens. Observations were discussed in light of the passivation theory. The role of chromium in nitriding was found to be mainly in hardness enhancement rather than improvement of corrosion resistance.

  11. Dynamics of runaway tails with time-dependent sub-Dreicer dc fields in magnetized plasmas

    NASA Technical Reports Server (NTRS)

    Moghaddam-Taaheri, E.; Vlahos, L.

    1987-01-01

    The evolution of runaway tails driven by sub-Dreicer time-dependent dc fields in a magnetized plasma are studied numerically using a quasi-linear code based on the Ritz-Galerkin method and finite elements. It is found that the runaway tail maintained a negative slope during the dc field increase. Depending on the values of the dc electric field at t = 0 and the electron gyrofrequency to the plasma frequency ratio the runaway tail became unstable to the anomalous Doppler resonance or remained stable before the saturation of the dc field at some maximum value. The systems that remained stable during this stage became unstable to the anomalous Doppler or the Cerenkov resonances when the dc field was kept at the saturation level or decreased. Once the instability is triggered, the runaway tail is isotropized.

  12. Dynamics of runaway tails with time-dependent sub-Dreicer dc fields in magnetized plasmas

    SciTech Connect

    Moghaddam-Taaheri, E.; Vlahos, L.

    1987-10-01

    The evolution of runaway tails driven by sub-Dreicer time-dependent dc fields in a magnetized plasma are studied numerically using a quasilinear code based on the Ritz--Galerkin method and finite elements. It is found that the runaway tail maintained a negative slope during the dc field increase. Depending on the values of the dc electric field at t = 0 and the electron gyrofrequency to the plasma frequency ratio the runaway tail became unstable to the anomalous Doppler resonance or remained stable before the saturation of the dc field at some maximum value. The systems that remained stable during this stage became unstable to the anomalous Doppler or the C-hacekerenkov resonances when the dc field was kept at the saturation level or decreased. Once the instability is triggered, the runaway tail is isotropized.

  13. DC Plasma Synthesis of Vertically Aligned Carbon Nanofibers for Biointerfacing

    NASA Astrophysics Data System (ADS)

    Pearce, Ryan Christopher

    Vertically aligned carbon nanofibers (VACNFs) are a class of materials whose nanoscale dimensions and physical properties makes them uniquely suitable as functional elements in many applications for biodetection and biointerfacing on a cellular level. Control of VACNF synthesis by catalytic plasma enhanced chemical vapor deposition (PECVD) presents many challenges in integration into devices and structures designed for biointerfacing, such as transparent or flexible substrates. This dissertation addresses ways to overcome many of these issues in addition to deepening the fundamental understanding of nano-synthesis in catalytic PECVD. First, a survey of the field of VACNF synthesis and biointerfacing is presented, identifying the present challenges and greatest experimental applications. It is followed by experimental observations that elucidate the underlying mechanism to fiber alignment during synthesis, a critical step for deterministic control of fiber growth. Using a grid of electrodes patterned by photolithography on an insulating substrate, it was found that the alignment of the fibers is controlled by the anisotropic etching provided by ions during dc-PECVD synthesis. The VACNFs that have been utilized for many cellular interfacing experiments have unique mechanical and fluorescent properties due to a SiNx coating. The mechanism for SiNx deposition to VACNF sidewalls during synthesis is explored in addition to a detailed study of the optical properties of the coating. To explain the optical properties of this coating it is proposed that the source of photoluminescence for the SiNx coated VACNFs is quantum confinement effects due to the presence of silicon nanoclusters embedded in a Si3N4 matrix. These luminescent fibers have proven useful as registry markers in cell impalefection studies. To realize VACNF arrays used as an inflatable angioplasty balloon with embedded fibers to deliver drugs across the blood-brain barrier, a method for transferring fibers to

  14. Rf-plasma synthesis of nanosize silicon carbide and nitride. Final report

    SciTech Connect

    Buss, R.J.

    1997-02-01

    A pulsed rf plasma technique is capable of generating ceramic particles of 10 manometer dimension. Experiments using silane/ammonia and trimethylchlorosilane/hydrogen gas mixtures show that both silicon nitride and silicon carbide powders can be synthesized with control of the average particle diameter from 7 to 200 nm. Large size dispersion and much agglomeration appear characteristic of the method, in contrast to results reported by another research group. The as produced powders have a high hydrogen content and are air and moisture sensitive. Post-plasma treatment in a controlled atmosphere at elevated temperature (800{degrees}C) eliminates the hydrogen and stabilizes the powder with respect to oxidation or hydrolysis.

  15. Cubic-BN-Like Structure of B-C-N Films Synthesized by Plasma Source Ion Nitriding

    NASA Astrophysics Data System (ADS)

    Lei, Ming-kai; Yuan, Li-jiang; Zhang, Zhong-lin; Ma, Teng-cai

    1999-01-01

    Plasma source ion nitriding has emerged as a low-temperature, low-pressure nitriding approach for implanting nitrogen ions and then diffusing them into bulk materials. The ion-plating B-C films were nitrided to synthesize B-C-N films at a nitriding temperature from 300 to 500° C. The x-ray photoelectron spectroscopy and diffuse reflectance Fourier transform infrared spectra analyses showed that the amorphous B-C-N films synthesized at 500° C are composed mainly of cubic-BN-like and hexagonal-BN-like plain microdomains. The higher nitriding temperature contributes to the formation of cubic-BN-like B-C-N structure in the B-C-N films.

  16. Melting and spheroidization of hexagonal boron nitride in a microwave-powered, atmospheric pressure nitrogen plasma `

    SciTech Connect

    Gleiman, S. S.; Phillips, J.

    2001-01-01

    We have developed a method for producing spherically-shaped, hexagonal phase boron nitride (hBN) particles of controlled diameter in the 10-100 micron size range. Specifically, platelet-shaped hBN particles are passed as an aerosol through a microwave-generated, atmospheric pressure, nitrogen plasma. In the plasma, agglomerates formed by collisions between input hBN particles, melt and forms spheres. We postulate that this unprecedented process takes place in the unique environment of a plasma containing a high N-atom concentration, because in such an environment the decomposition temperature can be raised above the melting temperature. Indeed, given the following relationship [1]: BN{sub (condensed)} {leftrightarrow} B{sub (gas)} + N{sub (gas)}. Standard equilibrium thermodynamics indicate that the decomposition temperature of hBN is increased in the presence of high concentrations of N atoms. We postulate that in our plasma system the N atom concentration is high enough to raise the decomposition temperature above the (undetermined) melting temperature. Keywords Microwave plasma, boron nitride, melting, spherical, thermodynamics, integrated circuit package.

  17. Manual modification and plasma exposure of boron nitride ceramic to study Hall effect thruster plasma channel material erosion

    NASA Astrophysics Data System (ADS)

    Satonik, Alexander J.

    Worn Hall effect thrusters (HET) show a variety of unique microstructures and elemental compositions in the boron nitride thruster channel walls. Worn thruster channels are typically created by running test thrusters in vacuum chambers for hundreds of hours. Studies were undertaken to manually modify samples of boron nitride without the use of a hall effect thruster. Samples were manually abraded with an abrasive blaster and sandpaper, in addition to a vacuum heater. Some of these samples were further exposed to a xenon plasma in a magnetron sputter device. Sandpaper and abrasive blaster tests were used to modify surface roughness values of the samples from 10,000 A to 150,000 A, matching worn thruster values. Vacuum heat treatments were performed on samples. These treatments showed the ability to modify chemical compositions of boron nitride samples, but not in a manner matching changes seen in worn thruster channels. Plasma erosion rate was shown to depend on the grade of the BN ceramic and the preparation of the surface prior to plasma exposure. Abraded samples were shown to erode 43% more than their pristine counterparts. Unique surface features and elemental compositions on the worn thruster channel samples were overwritten by new surface features on the ceramic grains. The microscope images of the ceramic surface show that the magnetron plasma source rounded the edges of the ceramic grains to closely match the worn HET surface. This effect was not as pronounced in studies of ion beam bombardment of the surface and appears to be a result of the quasi-neutral plasma environment.

  18. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor.

    PubMed

    Park, Jae-Min; Jang, Se Jin; Yusup, Luchana L; Lee, Won-Jun; Lee, Sang-Ick

    2016-08-17

    We report the plasma-enhanced atomic layer deposition (PEALD) of silicon nitride thin film using a silylamine compound as the silicon precursor. A series of silylamine compounds were designed by replacing SiH3 groups in trisilylamine by dimethylaminomethylsilyl or trimethylsilyl groups to obtain sufficient thermal stability. The silylamine compounds were synthesized through redistribution, amino-substitution, lithiation, and silylation reactions. Among them, bis(dimethylaminomethylsilyl)trimethylsilyl amine (C9H29N3Si3, DTDN2-H2) was selected as the silicon precursor because of the lowest bond dissociation energy and sufficient vapor pressures. The energies for adsorption and reaction of DTDN2-H2 with the silicon nitride surface were also calculated by density functional theory. PEALD silicon nitride thin films were prepared using DTDN2-H2 and N2 plasma. The PEALD process window was between 250 and 400 °C with a growth rate of 0.36 Å/cycle. The best film quality was obtained at 400 °C with a RF power of 100 W. The PEALD film prepared showed good bottom and sidewall coverages of ∼80% and ∼73%, respectively, on a trench-patterned wafer with an aspect ratio of 5.5. PMID:27447839

  19. Influence of Plasma Nitriding on the Microstructure, Wear, and Corrosion Properties of Quenched 30CrMnSiA Steel

    NASA Astrophysics Data System (ADS)

    Tang, L. N.; Yan, M. F.

    2013-07-01

    The oil-quenched 30CrMnSiA steel specimens have been pulse plasma-nitrided for 4 h using a constant 25% N2-75% H2 gaseous mixture. Different nitriding temperatures varying from 400 to 560 °C have been used to investigate the effects of treatment temperature on the microstructure, microhardness, wear, and corrosion resistances of the surface layers of the nitrided specimens. The results show that significant surface-hardened layer consisting of compound and diffusion layers can be obtained when the oil-quenched steel (α'-Fe) are plasma-nitrided at these experimental conditions, and the compound layer mainly consists of ɛ-Fe2-3N and γ'-Fe4N phases. Lower temperature (400-500 °C) nitriding favors the formation of ɛ-Fe2-3N phase in surface layer, while a monophase γ'-Fe4N layer can be obtained when the nitriding is carried out at a higher temperature (560 °C). With increasing nitriding temperature, the compound layer thickness increases firstly from 2-3 μm (400 °C) to 8 μm (500 °C) and then decreases to 4.5 μm (560 °C). The surface roughness increases remarkably, and both the surface and inner microhardness of the nitrided samples decrease as increasing the temperature. The compact compound layers with more ɛ-Fe2-3N phase can be obtained at lower temperature and have much higher wear and corrosion resistances than those compound layers formed employing 500-560 °C plasma nitriding.

  20. Fabrication of boron nitride nanotube-gold nanoparticle hybrids using pulsed plasma in liquid.

    PubMed

    Ponraj, Sri balaji; Chen, Zhiqiang; Li, Lu Hua; Shankaranarayanan, Jayanth Suryanarayanan; Rajmohan, Gayathri Devi; du Plessis, Johan; Sinclair, Andrew J; Chen, Ying; Wang, Xungai; Kanwar, Jagat R; Dai, Xiujuan J

    2014-09-01

    Plasma, generated in liquid at atmospheric pressure by a nanosecond pulsed voltage, was used to fabricate hybrid structures from boron nitride nanotubes and gold nanoparticles in deionized water. The pH was greatly reduced, conductivity was significantly increased, and concentrations of reactive oxygen and nitrogen species in the water were increased by the plasma treatment. The treatment reduced the length of the nanotubes, giving more individual cuplike structures, and introduced functional groups onto the surface. Gold nanoparticles were successively assembled onto the functionalized surfaces. The reactive species from the liquid plasma along with the nanosecond pulsed electric field seem to play a role in the shortening and functionalization of the nanotubes and the assembly of gold nanoparticles. The potential for targeted drug delivery was tested in a preliminary investigation using doxorubicin-loaded plasma-treated nanotubes which were effective at killing ∼99% of prostate cancer cells. PMID:25127006

  1. Nitriding of a tool steel with an electron-beam-excited plasma

    SciTech Connect

    Shoyama, H.; Hishida, T.; Hara, T.; Dake, Y.; Mori, T.; Nagai, H.; Hori, M.; Goto, T.

    2006-11-15

    Nitriding of a tool steel was carried out with an electron-beam-excited plasma (EBEP). EBEP is sustained with energetic electron beams over the pressure range of 10{sup -3}-10{sup 1} Pa by electron-impact ionization. Samples whose temperatures were controlled by electric radiant heater were exposed to EBEP. A nitrided layer of 100 {mu}m and a surface hardness of 1000 HV(0.1) were achieved for tool steel SKD61 (JIS) at 800 K and a treatment time of 3 h. In order to measure the density of nitrogen atoms in EBEP, a vacuum ultraviolet absorption spectroscopy system was used. It was found that the density of nitrogen atoms increased from 10{sup 11} to 10{sup 12} cm{sup -3} linearly with an increase of electron beam current from 2 to 20 A.

  2. High-Temperature Thermodynamic Investigation of Nano-Dispersed Nitrides Obtained in Thermal Plasma

    NASA Astrophysics Data System (ADS)

    Georgieva, M.; Vissokov, G. Grancharov, IV; Brakalov, L.

    2007-04-01

    The nitrides of transient metals have a high hardness, thermal stability, remarkable wear resistance in aggressive chemical mediums, melted metals and alloys, high corrosion resistance, and low coefficient of electric resistance. Under the conditions of low-temperature argon plasma (LTP), thermodynamic investigations were conducted in the process of obtaining of AlN, TiN and Si3N4 in a temperature range of 1000 K to 6000 K. To investigate the thermodynamic possibility of obtaining nitrides, a computer model was used which provided the equilibrium composition of gaseous and solid phases at different temperatures. The conditions for chemical equilibrium of the system were based on the minimization of Gibbs' energy.

  3. Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications

    NASA Technical Reports Server (NTRS)

    Triplett, G. E., Jr.; Durbin, S. M.

    2004-01-01

    The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.

  4. Formation of BN and AlBN during nitridation of sapphire using RF plasma sources[Radiofrequency

    SciTech Connect

    Ptak, A.J.; Ziemer, K.S.; Holbert, L.J.; Stinespring, C.D.; Myers, T.H.

    2000-07-01

    Evidence is presented that nitrogen plasma sources utilizing a pyrolytic boron nitride liner may be a significant source of B contamination during growth and processing. Auger electron spectroscopy analysis performed during nitridation of sapphire indicate the resulting layers contain a significant amount of BN. The formation of Al{sub 1{minus}x}B{sub x}N would explain the observation of a lattice constant several percent smaller than AlN as measured by reflection high-energy electron diffraction. The presence of cubic inclusions in layers grown on such a surface may be related to the segregation of BN during the nitridation into its cubic phase.

  5. The Role of Activated Nitrogen Species on Double-folded Screen Nitriding Process

    NASA Astrophysics Data System (ADS)

    Kim, Sanggweon; Lee, Jaehoon; Saito, Nagahiro; Takai, Osamu

    2013-03-01

    As clean and energy saving surface hardening technology, plasma nitriding techniques have been evolved with object of higher performance in the last decades. Even though the diffusion of nitrogen inward to steel is occurred at the final step, solid diffusion from surface, energy transition from gas molecule of nitrogen to atomic or an activated state have many different steps depending on the plasma conditions, parameters and the design of each equipment. And this study made comparative on nitrogen sources transfer with conventional DC plasma nitriding and novel nitriding process using plasma diagnosis and metallurgical observation. With different vacuum pressure, gas ratio and new designed electrode (double-folded screen cathode electrode), it showed a different behavior of DC plasma nitriding including the nano-sized nitride on the outer surface of specimen due to nitrogen source of determining plasma species. In this study, plasma species was able to identify with optical emission spectroscopy (OES) studies. From these observations, we could understand better role of ions or neutral nitrogen species, like neutral nitrogen (N), N2+ and NHx radicals in plasma nitriding process with different parameters. And cutting layers of nitride specimen were showed the results due to a different species gas flow ratio or plasma conditions.

  6. Investigation on Plasma Jet Flow Phenomena During DC Air Arc Motion in Bridge-Type Contacts

    NASA Astrophysics Data System (ADS)

    Zhai, Guofu; Bo, Kai; Chen, Mo; Zhou, Xue; Qiao, Xinlei

    2016-05-01

    Arc plasma jet flow in the air was investigated under a bridge-type contacts in a DC 270 V resistive circuit. We characterized the arc plasma jet flow appearance at different currents by using high-speed photography, and two polished contacts were used to search for the relationship between roughness and plasma jet flow. Then, to make the nature of arc plasma jet flow phenomena clear, a simplified model based on magnetohydrodynamic (MHD) theory was established and calculated. The simulated DC arc plasma was presented with the temperature distribution and the current density distribution. Furthermore, the calculated arc flow velocity field showed that the circular vortex was an embodiment of the arc plasma jet flow progress. The combined action of volume force and contact surface was the main reason of the arc jet flow. supported by National Natural Science Foundation of China (Nos. 51307030, 51277038)

  7. Low temperature, fast deposition of metallic titanium nitride films using plasma activated reactive evaporation

    SciTech Connect

    Montes de Oca Valero, J.A.; Le Petitcorps, Y.; Manaud, J.P.; Chollon, G.; Carrillo Romo, F.J.; Lopez M, A.

    2005-05-01

    Titanium and titanium nitride thin films were deposited on silica glass and W substrates at a high coating growth rate by plasma-activated reactive evaporation (ARE). The crystal structure, preferred orientation and grain size of the coatings were determined by x-ray diffraction (XRD) technique using Cu-K{alpha} x rays. The analysis of the coating morphology was performed by field-emission scanning electron microscopy (FE-SEM). The composition of the films was analyzed by Auger electron spectroscopy (AES) and electron-probe microanalysis (EPMA). The titanium and titanium nitride condensates were collected on a carbon-coated collodion film then characterized by transmission electron microscopy (TEM) in order to study the structures of the deposits at very short deposition times. The resistivity of the films was measured by using the four-point-probe method. The titanium coatings were found to consist of very fine particles (40 nm in grain size) and to exhibit a strong (002) texture. The titanium nitride coatings were substoichiometric (TiN{sub x},x<1), with an oxygen content ranging from 7 to 15 at. % depending on the deposition conditions. The deposits were found to exhibit a (111) preferred orientation. This behavior became stronger with coating thickness. In spite of the presence of oxygen, all the TiN{sub x} coatings obtained at low temperature and a high growth rate in this work exhibited a rather high electrical conductivity.

  8. Modification of Low-Alloy Steel Surface by Plasma Electrolytic Nitriding

    NASA Astrophysics Data System (ADS)

    Kusmanov, S. A.; Smirnov, A. A.; Silkin, S. A.; Belkin, P. N.

    2016-07-01

    The structure of the low-alloy steel after plasma electrolytic nitriding (PEN) in electrolyte containing ammonium nitrate was investigated. The cross-sectional microstructure, composition, and phase constituents of modified layer under different processing conditions were characterized. It is shown that anode PEN provides the saturation of steel with nitrogen and formation of α-Fe2O3, FeO, and Fe3O4 oxides, Fe2-3N nitride, and martensite. The aqueous solution that contained 15 wt.% NH4Cl and 5 wt.% NH4NO3 allows one to obtain the hardened layer with a thickness of 80 μm and a microhardness up to 740 HV during 5 min at 850 °C. Surface roughness decreases from 1.5 to 0.8 μm after 5-min PEN at 650 °C. The proposed electrolyte and processing mode (750 °C, 10 min) enable to obtain the decrease in the weight loss after lubricate wear testing by a factor of 2.7. The base-nitrate electrolyte conditioned a decrease in the corrosion current density by a factor of 9 due to passivating effect of the oxide and nitride of iron.

  9. Modification of Low-Alloy Steel Surface by Plasma Electrolytic Nitriding

    NASA Astrophysics Data System (ADS)

    Kusmanov, S. A.; Smirnov, A. A.; Silkin, S. A.; Belkin, P. N.

    2016-05-01

    The structure of the low-alloy steel after plasma electrolytic nitriding (PEN) in electrolyte containing ammonium nitrate was investigated. The cross-sectional microstructure, composition, and phase constituents of modified layer under different processing conditions were characterized. It is shown that anode PEN provides the saturation of steel with nitrogen and formation of α-Fe2O3, FeO, and Fe3O4 oxides, Fe2-3N nitride, and martensite. The aqueous solution that contained 15 wt.% NH4Cl and 5 wt.% NH4NO3 allows one to obtain the hardened layer with a thickness of 80 μm and a microhardness up to 740 HV during 5 min at 850 °C. Surface roughness decreases from 1.5 to 0.8 μm after 5-min PEN at 650 °C. The proposed electrolyte and processing mode (750 °C, 10 min) enable to obtain the decrease in the weight loss after lubricate wear testing by a factor of 2.7. The base-nitrate electrolyte conditioned a decrease in the corrosion current density by a factor of 9 due to passivating effect of the oxide and nitride of iron.

  10. Degradation of Gate Oxide Reliability due to Plasma-Deposited Silicon Nitride

    NASA Astrophysics Data System (ADS)

    Ogino, Masaaki; Sugahara, Yoshiyuki; Kuribayashi, Hitoshi; Yamabe, Kikuo

    2004-03-01

    The effects of plasma-enhanced chemical vapor deposition (PE-CVD) silicon nitride (p-SiN) passivation films on time dependent dielectric breakdown (TDDB) of gate oxide were studied. It was found that degradation of TDDB characteristics with p-SiN films was suppressed by the change in p-SiN deposition conditions. The correlation between trapped electron density and TDDB characteristics varied, depending on the p-SiN films. The degradation of TDDB characteristics was also enhanced with phosphosilicate glass (PSG) under the p-SiN passivation film.

  11. Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

    NASA Astrophysics Data System (ADS)

    Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki

    2016-05-01

    Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4–1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

  12. Influence of NH4Cl Powder Addition for Fabrication of Aluminum Nitride Coating in Reactive Atmospheric Plasma Spray Process

    NASA Astrophysics Data System (ADS)

    Shahien, Mohammed; Yamada, Motohiro; Yasui, Toshiaki; Fukumoto, Masahiro

    2011-01-01

    Reactive plasma spray is the key to fabricating aluminum nitride (AlN) thermally sprayed coatings. It was possible to fabricate AlN/Al composite coatings using atmospheric plasma spray process through plasma nitriding of Al powders (Al 30 μm). The nitriding reaction and the AlN content could be improved by controlling the spray distance and the feedstock powder particle size. Increasing the spray distance and/or using smaller particle size of Al powders improved the in-flight nitriding reaction. However, it was difficult to fabricate thick and dense AlN coatings with an increase in the spray distance and/or when using fine particles. Thus, the coatings thickness was suppressed because of the complete nitriding of some particles (formation of AlN particles) during flight, which prevents the particle deposition. Furthermore, the excessive vaporization of Al fine particles (due to increased particle temperature) decreased the deposition efficiency. To fabricate thick AlN coatings in the reactive plasma spray process, improving the nitriding reaction of the large Al particles at short spray distance is required to decrease the vaporization of Al particles during flight. This study investigated the influence of adding ammonium chloride (NH4Cl) powders on the nitriding process of large Al powders and on the microstructure of the fabricated coatings. It was possible to fabricate thick AlN coatings at 100 mm spray distance with small addition of NH4Cl powders to the Al feedstock powders (30 μm). Addition of NH4Cl to the starting Al powders promoted the formation of AlN through changing the reaction path to vapor-phase nitridation chlorination-nitridation sequences as confirmed by the thermodynamic analysis of possible intermediate reactions. This changes the nitriding reaction to a mild way, so it is more controlled with no explosive mode and with relatively low heating rates. Thus, NH4Cl acts as a catalyst, nitrogen source, and diluent agent. Furthermore, the evolved

  13. Long range temporal correlation in the chaotic oscillations of a dc glow discharge plasma

    SciTech Connect

    Lahiri, S.; Roychowdhury, D.

    2012-08-15

    Long range temporal correlations in the fluctuations of the plasma floating potentials (measured using a Langmuir probe) are investigated in a dc glow discharge plasma. Keeping the neutral pressure constant, the discharge voltage was varied and at the formation of the plasma, quasi periodic oscillations were excited and on further increase of the discharge voltage they became chaotic (irregular) beyond a threshold voltage. We compared the Lyapunov exponent with the Hurst exponent obtained from R/S statistics which showed an opposite behaviour at the transition point. These results are perhaps new since we have not come across such comparative analysis for chaotic oscillations in a glow discharge plasma before.

  14. Study of stress in tensile nitrogen-plasma-treated multilayer silicon nitride films

    SciTech Connect

    Morin, Pierre; Raymond, Gaetan; Benoit, Daniel; Guiheux, Denis; Pantel, Roland; Volpi, Fabien; Braccini, Muriel

    2011-07-15

    The authors conducted a physico-chemical analysis of tensile sequential-nitrogen-plasma-treated silicon nitride films, which function as stressor liners in complementary metal oxide semiconductor (CMOS) technologies. These films are made of stacked nanometer-thick, plasma-enhanced, chemical vapor-deposited layers which were individually treated with N{sub 2}-plasma, to increase stress. This study allowed us to monitor the evolution of the films' chemical composition and stress as a function of process parameters such as deposition and post-N{sub 2}-plasma duration. Consistent with secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM) and other physico-chemical analysis results, it was shown that the elementary component of the films can be modeled with a bi-layer consisting of an untreated slice at the bottom that is covered by a more tensile post-treated film. In addition, we observed that longer plasma treatments increase residual stress, SiN bond concentration and layer density, while reducing hydrogen content. The stress increase induced by the plasma treatment was shown to correlate with the increase in SiN bonds following a percolation mechanism that is linked to hydrogen dissociation. Kinetics laws describing both SiN bond generation and stress increase are proposed and it is demonstrated that stress increase follows first-order kinetics.

  15. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NASA Astrophysics Data System (ADS)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  16. Study on plasma-spraying coating bioactive ceramics onto silicon nitride surface as composite endosteal implants.

    PubMed

    Xu, L L; Shi, S J

    1997-01-01

    The successful key of endosteal implants depends on the properties of implant materials which are very important for oral implantology at the present. Because silicon nitride has high strength and hydroxylapatite (HA) and flourapatite (FA) have good biocompatibility. In this paper, we apply silicon nitride as base material. Plasma spray HA, FA onto its surface as composite endosteal implants. Physical and chemical properties test, includes X-ray diffraction (XRD), scanning electronic microscope (SEM), EDAX and bonding strength test (push-out test). The results indicate: after plasma-spraying coating, crystalline phase of HA and FA unchanged and form a lot of pores among the crystal particles. Those pores benefit bone growing into them. It is very important for implants to be fixed in bone for long time, Ca/P ratio has no significant change. Bonding strength test results indicate: Si3N4-HA 23.6MPa, Si3N4-FA 27.12 MPa are higher than that of Ti-HA 15.07 MPa. On the basis of these studies, they are kinds of ideal implant materials. PMID:9731426

  17. Friction and wear of plasma-deposited amorphous hydrogenated films on silicon nitride

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1991-01-01

    An investigation was conducted to examine the friction and wear behavior of amorphous hydrogenated carbon (a-C:H) films in sliding contact with silicon nitride pins in both dry nitrogen and humid air environments. Amorphous hydrogenated carbon films approximately 0.06 micron thick were deposited on silicon nitride flat substrates by using the 30 kHz ac glow discharge of a planar plasma reactor. The results indicate that an increase in plasma deposition power gives an increase in film density and hardness. The high-density a-C:H films deposited behaved tribologically much like bulk diamond. In the dry nitrogen environment, a tribochemical reaction produced a substance, probably a hydrocarbon-rich layer, that decreased the coefficient of friction. In the humid air environment, tribochemical interactions drastically reduced the wear life of a-C:H films and water vapor greatly increased the friction. Even in humid air, effective lubrication is possible with vacuum-annealed a-C:H films. The vacuum-annealed high-density a-C:H film formed an outermost superficial graphitic layer, which behaved like graphite, on the bulk a-C:H film. Like graphite, the annealed a-C:H film with the superficial graphitic layer showed low friction when adsorbed water vapor was present.

  18. Role of fluorine in plasma nitridated ZrO{sub 2} thin films under irradiation

    SciTech Connect

    Huang, A. P.; Xiao, Z. S.; Liu, X. Y.; Wang, L.; Chu, Paul K.

    2008-09-22

    The role of fluorine in plasma-nitridated ZrO{sub 2} thin films under electron irradiation is investigated in situ by real-time high-resolution transmission electron microscopy. Fluorine and nitrogen codoping can suppress the microstructure evolution during electron beam bombardment and the corresponding origin is probed and verified. The results obtained by irradiation with an ultraviolet laser show that plasma fluorination can effectively remove the dissociative N or O particles in the ZrO{sub 2} thin films which can escape from the interstitial sites under electron irradiation. The mechanism of the irradiation stability of the F and N codoped ZrO{sub 2} thin film is also discussed.

  19. Gallium nitride nanoneedles grown in extremely non-equilibrium nitrogen plasma

    NASA Astrophysics Data System (ADS)

    Mangla, O.; Roy, S.

    2016-05-01

    In the present work, gallium nitride (GaN) nanoneedles are grown on quartz substrates using the high fluence ions of GaN produced by hot, dense and extremely non-equlibrium nitrogen plasma in a modified dense plasma focus device. The formation of nanoneedles is obtained from the scanning electron microscopy with mean size of the head of nanoneedles ~ 70 nm. The nanoneedles are found to be poly-crystalline when studied structurally through the X-ray diffraction. The optical properties of nanoneedles studied using absorption spectra which show more absorption for nanoneedles depsoited one shot of ions irradiation. In addition, the band gap of nanoneedles is found to be increased as compared to bulk GaN. The obtained nanoneedles with increased band gap have potential applications in detector systems.

  20. Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas

    NASA Astrophysics Data System (ADS)

    Shimabayashi, Masaharu; Kurihara, Kazuaki; Horikawa, Yoshimine; Sasaki, Koichi

    2016-03-01

    We examined the atomic concentrations and the weight densities of SiC surfaces irradiated with remote nitrogen plasmas. The unique approach of this work is that we compared the SiC surface irradiated with atomic nitrogen with that irradiated with a mixture of atomic nitrogen and molecular nitrogen in the metastable \\text{A}3Σ \\text{u} + state. As a result, it was found that molecular nitrogen in the \\text{A}3Σ \\text{u} + state has a higher efficiency than atomic nitrogen in the nitriding of SiC surfaces. The weight density measurements have revealed the removal of Si and C from the SiC surface by the irradiation of remote nitrogen plasma. These results suggest that the formation of volatile molecules is less significant when the SiC surface is irradiated with molecular nitrogen in the metastable \\text{A}3Σ \\text{u} + state.

  1. Thermal plasma treatment of stormwater sediments: comparison between DC non-transferred and partially transferred arc plasma.

    PubMed

    Li, O L; Guo, Y; Chang, J S; Saito, N

    2015-01-01

    The disposal of enormous amount of stormwater sediments becomes an emerging worldwide problem. Stormwater sediments are contaminated by heavy metals, phosphorus, trace organic and hydrocarbons, and cannot be disposed without treatment. Thermal plasma decontamination technology offers a high decomposition rate in a wide range of toxic organic compound and immobilization of heavy metal. In this study, we compared the treatment results between two different modes of thermal plasma: (1) a non-transferred direct current (DC) mode and (2) a partial DC-transferred mode. The reductions of total organic carbon (TOC) were, respectively, 25% and 80% for non-transferred and partially transferred plasma, respectively. Most of the toxic organic compounds were converted majorly to CxHy. In the gaseous emission, the accumulated CxHy, CO, NO and H2S were significantly higher in partially transferred mode than in non-transferred mode. The solid analysis demonstrated that the concentrations of Ca and Fe were enriched by 500% and 40%, respectively. New chemical compositions such as KAlSi3O8, Fe3O4, NaCl and CaSO4 were formed after treatment in partially DC-transferred mode. The power inputs were 1 and 10 kW, respectively, for non-transferred DC mode and a partially DC-transferred mode. With a lower energy input, non-transferred plasma treatment can be used for decontamination of sediments with low TOC and metal concentration. Meanwhile, partially transferred thermal plasma with higher energy input is suitable for treating sediments with high TOC percentage and volatile metal concentration. The organic compounds are converted into valuable gaseous products which can be recycled as an energy source. PMID:25566678

  2. Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma.

    PubMed

    Knoops, Harm C M; Braeken, Eline M J; de Peuter, Koen; Potts, Stephen E; Haukka, Suvi; Pore, Viljami; Kessels, Wilhelmus M M

    2015-09-01

    Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasma was developed and studied. The process exhibited a wide temperature window starting from room temperature up to 500 °C. The material properties and wet-etch rates were investigated as a function of plasma exposure time, plasma pressure, and substrate table temperature. Table temperatures of 300-500 °C yielded a high material quality and a composition close to Si3N4 was obtained at 500 °C (N/Si=1.4±0.1, mass density=2.9±0.1 g/cm3, refractive index=1.96±0.03). Low wet-etch rates of ∼1 nm/min were obtained for films deposited at table temperatures of 400 °C and higher, similar to that achieved in the literature using low-pressure chemical vapor deposition of SiNx at >700 °C. For novel applications requiring significantly lower temperatures, the temperature window from room temperature to 200 °C can be a solution, where relatively high material quality was obtained when operating at low plasma pressures or long plasma exposure times. PMID:26305370

  3. Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.

    1988-01-01

    The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

  4. Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.

    1989-01-01

    The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

  5. Formation of Expanded Austenite on a Cold-Sprayed AISI 316L Coating by Low-Temperature Plasma Nitriding

    NASA Astrophysics Data System (ADS)

    Adachi, Shinichiro; Ueda, Nobuhiro

    2015-12-01

    Low-temperature plasma nitriding at temperatures below 450 °C is commonly applied to austenitic stainless steels to enhance wear resistance, while maintaining corrosion resistance, by forming expanded austenite (known as the S-phase). In this work, low-temperature plasma nitriding of cold-sprayed AISI 316L coatings was examined. A cold-spray technique was developed to produce metal coatings with less oxidation. However, the cold-sprayed AISI 316L coating obtained by use of nitrogen gas as propellant contained many interconnected pores and cracks, and was, consequently, unsuitable as an anticorrosive coating. Therefore, laser post-treatment was used to modify the coating and increase its density to similar to that of bulk steel. The anticorrosive performance of this coating on a carbon steel substrate in NaCl solution was substantially improved. Subsequent low-temperature plasma nitriding enhanced the wear resistance by two orders of magnitude. It is concluded that cold-sprayed AISI 316L coatings treated by laser post-treatment and subsequent low-temperature plasma nitriding could be used as protective coatings under severe wear and corrosion conditions.

  6. Effects of applied dc radial electric fields on particle transport in a bumpy torus plasma

    NASA Technical Reports Server (NTRS)

    Roth, J. R.

    1978-01-01

    The influence of applied dc radial electric fields on particle transport in a bumpy torus plasma is studied. The plasma, magnetic field, and ion heating mechanism are operated in steady state. Ion kinetic temperature is more than a factor of ten higher than electron temperature. The electric fields raise the ions to energies on the order of kilovolts and then point radially inward or outward. Plasma number density profiles are flat or triangular across the plasma diameter. It is suggested that the radial transport processes are nondiffusional and dominated by strong radial electric fields. These characteristics are caused by the absence of a second derivative in the density profile and the flat electron temperature profiles. If the electric field acting on the minor radius of the toroidal plasma points inward, plasma number density and confinement time are increased.

  7. Tribocorrosion studies of metallic biomaterials: The effect of plasma nitriding and DLC surface modifications.

    PubMed

    Zhao, Guo-Hua; Aune, Ragnhild E; Espallargas, Nuria

    2016-10-01

    The medical grade pure titanium, stainless steel and CoCrMo alloy have been utilized as biomaterials for load-bearing orthopedic prosthesis. The conventional surgery metals suffer from a combined effect of wear and corrosion once they are implanted, which may significantly accelerate the material degradation process. In this work, the tribocorrosion performance of the metallic biomaterials with different surface modifications was studied in the simulated body fluid for the purpose of investigating the effect of the surface treatments on the tribocorrosion performance and eventually finding the most suitable implantation materials. The metals were subjected to surface modifications by plasma nitriding in different treatment temperatures or physical vapor deposition (PVD) to produce diamond-like carbon (DLC) coating, respectively. The dry wear and tribocorrosion properties of the samples were evaluated by using a reciprocating ball-on-disc tribometer equipped with an electrochemical cell. Prior to the tribocorrosion tests, their electrochemical behavior was measured by the potentiodynamic polarization in phosphate buffer saline (PBS) solution at room temperature. Both stainless steel and CoCrMo after low temperature nitriding kept their passive nature by forming an expanded austenite phase. The DLC coated samples presented the low anodic corrosion current due to the chemical inertness of the carbon layer. During the tribocorrosion tests at open circuit potential, the untreated and low temperature nitrided samples exhibited significant potential drop towards the cathodic direction, which was a result of the worn out of the passive film. Galvanic coupling was established between the depassivated (worn) area and the still passive (unworn) area, making the materials suffered from wear-accelerated corrosion. The DLC coating performed as a solid lubricant in both dry wear and tribocorrosion tests, and the resulting wear after the tests was almost negligible. PMID:27348147

  8. Applications of a d.c. plasma emission spectrometer (DCP) to the analysis of envrionmental samples

    NASA Astrophysics Data System (ADS)

    Grogan, W. C.

    A direct current plasma spectrometer system has been used to determine specific trace elements in samples collected during several marine monitoring surveys. The data is currently being used to assess the impact on the environment of North Sea oil exploitation. The trace elements are routinely monitored in sediment and shellfish extracts and in oil terminal water effluents. The techniques used in conjunction with the d.c. plasma system are evaluated. Stray light and spectral interference problems from calcium and magnesium emissions are identified. Compensation for the interferences using simple linear corrections are described. Analysis of standard reference materials indicates that the direct current plasma system yields results comparable to other analytical techniques.

  9. Spatially-resolved spectral image of a microwave-induced plasma with Okamoto-cavity for nitridation of steel substrate.

    PubMed

    Sato, Shigeo; Arai, Yuuki; Wagatsuma, Kazuaki

    2014-01-01

    When a nitrogen microwave-induced plasma produced with an Okamoto-cavity was employed as a source for the nitridation of steel samples, the characteristics of the plasma were investigated by analyzing a spatially-resolved emission image of nitrogen excited species obtained with a two-dimensionally imaging spectrograph. Our previous study had reported on an excellent performance of the Okamoto-cavity microwave-induced plasma (MIP), enabling a nitrided layer having a several-micrometer-thickness to form on an iron substrate, even if the treatment is completed within 1 min, which is superior to a conventional plasma nitriding using low-pressure glow discharges requiring a prolonged treatment time. In this paper, the reason for this is discussed based on a spectrometric investigation. The emission images of band heads of nitrogen molecule and nitrogen molecule ion extended toward the axial/radial directions of the plasma at larger microwave powers supplied to the MIP, thus elevating the number density of the excited species of nitrogen, which would activate any chemical reaction on the iron substrate. However, a drastic increase in the growth rate of the nitrided layer when increasing the microwave power from 600 to 700 W, which had been observed in our previous study, could not be explained only from such a variation in the excited species of nitrogen. This result is probably because the growth process is dominantly controlled by thermal diffusion of nitrogen atom after it enters into the iron substrate, where the substrate temperature is the most important parameter concerning the mobility in the iron lattice. Therefore, the Okamoto-cavity MIP could contribute to a thermal source through radiative heating as well as a source of nitrogen excited species, especially in the growth process of the nitrided layer. PMID:24521910

  10. Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment.

    PubMed

    Vasquez, M R; Flauta, R E; Wada, M

    2008-02-01

    Monte Carlo simulations were conducted to study the formation of gallium-nitride (GaN) layer on liquid gallium (Ga) sputtering target immersed in nitrogen (N(2)) plasma. In the simulation model, N ions were assumed to possess energy equal to the bias voltage applied to the sputtering target with respect to the plasma. The results showed the surface morphology of GaN changed from a relatively smooth GaN on Ga surface at 50 eV N ion energy to a rough surface with GaN dendrites on liquid Ga at 500 eV ion energy. Further increase in N ion energy up to 1 keV resulted in smaller density of GaN dendrites on surface. Increasing surface coverage of Ga by GaN substantially reduced the sputtering yield of Ga from the target. These simulation results were correlated with previously reported experimental observations on liquid Ga surface immersed in the nitrogen plasma of a plasma-sputter-type ion source. PMID:18315225

  11. Local bonding environment of plasma deposited nitrogen-rich silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Soh, Martin T. K.; Savvides, N.; Musca, Charles A.; Martyniuk, Mariusz P.; Faraone, Lorenzo

    2005-05-01

    Plasma deposited nitrogen-rich silicon nitride thin films were prepared at temperatures between 80 and 300 °C. The infrared transmission (400-4000cm-1) was measured, and selected absorption bands were quantified through a multiple Lorentzian oscillator parametric analysis. It is observed that the concentration of silicon-centered tetrahedra bonded together through nitrogen atoms increases monotonically with increasing deposition temperature. A qualitative model is presented to highlight the impact of the active adsorption site density on the degree of stepped (ordered) nucleation at the vapor-film interface. The importance of this growth profile, in particular for micro-systems-technology, is discussed in conjunction with measurements of the biaxial modulus and residual stress of the thin films. A mechanism for residual stress controllability is also presented. The atomic concentrations of silicon, nitrogen, and hydrogen in the thin films were calculated using infrared calibration factors derived from the deposition temperature dependent condensation processes. The results for silicon nitride thin films deposited at 300 °C were observed to be similar in composition to silicon diimide. Additional observations of the infrared transmission characteristics are reported, which include the identification of silazane bridge characteristics for the absorption feature around 610cm-1, which is typically associated with Si-H (bending) absorption.

  12. Radio Frequency Plasma Synthesis of Boron Nitride Nanotubes (BNNTs) for Structural Applications: Part I

    NASA Technical Reports Server (NTRS)

    Hales, Stephen J.; Alexa, Joel A.; Jensen, Brian J.; Thomsen, Donald L.

    2016-01-01

    It is evident that nanotubes, such as carbon, boron nitride and even silicon, offer great potential for many aerospace applications. The opportunity exists to harness the extremely high strength and stiffness exhibited by high-purity, low-defect nanotubes in structural materials. Even though the technology associated with carbon nanotube (CNT) development is mature, the mechanical property benefits have yet to be fully realized. Boron nitride nanotubes (BNNTs) offer similar structural benefits, but exhibit superior chemical and thermal stability. A broader range of potential structural applications results, particularly as reinforcing agents for metal- and ceramic- based composites. However, synthesis of BNNTs is more challenging than CNTs mainly because of the higher processing temperatures required, and mass production techniques have yet to emerge. A promising technique is radio frequency plasma spray (RFPS), which is an inductively coupled, very high temperature process. The lack of electrodes and the self- contained, inert gas environment lend themselves to an ultraclean product. It is the aim of this White Paper to survey the state of the art with regard to nano-material production by analyzing the pros and cons of existing methods. The intention is to combine the best concepts and apply the NASA Langley Research Center (LaRC) RFPS facility to reliably synthesize large quantities of consistent, high-purity BNNTs.

  13. In vitro corrosion resistance of plasma source ion nitrided austenitic stainless steels.

    PubMed

    Le, M K; Zhu, X M

    2001-04-01

    Plasma source ion nitriding has emerged as a low-temperature, low-pressure nitriding approach for low-energy implanting nitrogen ions and then diffusing them into steel and alloy. In this work, a single high nitrogen face-centered-cubic (f.c.c.) phase (gammaN) formed on the 1Cr18Ni9Ti and AISI 316L austenitic stainless steels with a high nitrogen concentration of about 32 at % was characterized using Auger electron spectroscopy, electron probe microanalysis, glancing angle X-ray diffraction, and transmission electron microscopy. The corrosion resistance of the gammaN-phase layer was studied by the electrochemical cyclic polarization measurement in Ringer's solutions buffered to pH from 3.5 to 7.2 at a temperature of 37 degrees C. No pitting corrosion in the Ringer's solutions with pH = 7.2 and 5.5 was detected for the gammaN-phase layers on the two stainless steels. The high pitting potential for the gammaN-phase layers is higher, about 500 and 600 mV, above that of the two original stainless steels, respectively, in the Ringer's solution with pH = 3.5. The corroded surface morphologies of the gammaN-phase layers observed by scanning electron microscopy are consistent with the results of the electrochemical polarization measurement. PMID:11246957

  14. Ion-plasma erosion-resistant nanocoatings based on metal carbides and nitrides

    NASA Astrophysics Data System (ADS)

    Muboyadzhyan, S. A.; Aleksandrov, D. A.; Gorlov, D. S.

    2010-09-01

    The erosion, corrosion, and heat resistance of alloy/ion-plasma nanolayer coating compositions based on TiC and CrC carbides and TiN, CrN, ZrN, and AlN nitrides are studied. The effect of the nanolayer thickness, composition, and structure of the coatings based on the metal nitrides and carbides on the relative erosion resistance of alloy/coating compositions in a gas-abrasive quartz sand flux is studied at a sand grain size of 300-350 μm, abrasive supply rate of 200 g/min, and an angle of flux incidence of 20° (tangential flow) and 70° (near-head-on attack flow). It is shown that high erosion resistance is characteristic of 15-22 μm thick coatings that are produced by assisted deposition and consist of alternating TiN (70 nm) and CrN (70 nm) layers on a VT1-0 titanium alloy or TiC (70 nm) and CrC (70 nm) layers on an EP866 compressor steel.

  15. Co-deposition of titanium and iron nitrides on SS-321 by using plasma focus

    NASA Astrophysics Data System (ADS)

    Ahmad, R.; Hassan, M.; Murtaza, G.; Akhter, J. I.; Qayyum, A.; Waheed, A.; Zakaullah, M.

    2006-02-01

    This article reports the co-deposition process of TiN0.9 and (Fe,Cr)(2)N compounds on SS-321 substrate using a 2.3 kJ dense plasma focus device operated with N-2 discharges. X-ray diffraction analysis is performed to investigate the ion-induced changes in the near surface structure of the SS-321. Scanning electron microscopy with the energy dispersive X-ray spectroscopy is carried out to analyse the surface morphology and the elemental composition of the nitrided samples. The results reveal that at the low fluence of ion bombardment, a non-stoichiometric tertiary phase (Fe,Cr)(x)N is developed, which transforms into a stable stoichiometric compound (Fe,Cr)(2)N by increasing the ion flux. Some CrN precipitates are also observed because of the thermal effect produced by the bombardment of energetic ion beam. Vickers micro-hardness values are increased more than twice for typical ion nitrided samples.

  16. Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma

    SciTech Connect

    Okada, H.; Kato, M.; Ishimaru, T.; Sekiguchi, H.; Wakahara, A.; Furukawa, M.

    2014-02-20

    Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma is investigated. Feasibility of precursors of triethylsilane (TES) and bis(dimethylamino)dimethylsilane (BDMADMS) is discussed based on a calculation of bond energies by computer simulation. Refractive indices of 1.81 and 1.71 are obtained for deposited films with TES and BDMADMS, respectively. X-ray photoelectron spectroscopy (XPS) analysis of the deposited film revealed that TES-based film coincides with the stoichiometric thermal silicon nitride.

  17. The effect of plasma on silicon nitride, oxynitride and other metals for enhanced epoxy adhesion for packaging applications

    NASA Astrophysics Data System (ADS)

    Gaddam, Sneha Sen

    The effects of direct plasma chemistries on carbon removal from silicon nitride (SiNx) and oxynitride (SiOxNy ) surfaces and Cu have been studied by x-photoelectron spectroscopy (XPS) and ex-situ contact angle measurements. The data indicate that O2,NH3 and He capacitively coupled plasmas are effective at removing adventitious carbon from silicon nitride (SiNx) and Silicon oxynitride (SiO xNy ) surfaces. O2plasma and He plasma treatment results in the formation of silica overlayer. In contrast, the exposure to NH3 plasma results in negligible additional oxidation of the SiN x and SiOxNy surface. Ex-situ contact angle measurements show that SiNx and SiOxNy surfaces when exposed to oxygen plasma are initially more hydrophilic than surfaces exposed to NH 3 plasma and He plasma, indicating that the O2 plasma-induced SiO2 overlayer is highly reactive towards ambient corresponding to increased roughness measured by AFM. At longer ambient exposures (>~10 hours), however surfaces treated by either O2, He or NH3 plasma exhibit similar steady state contact angles, correlated with rapid uptake of adventitious carbon, as determined by XPS. Surface passivation by exposure to molecular hydrogen prior to ambient exposure significantly retards the increase in the contact angle upon the exposure to ambient. The results suggest a practical route to enhancing the time available for effective bonding to surfaces in microelectronics packaging applications.

  18. Analysis of Electron Temperature in DC Ar/SF6 Plasma Using Cylindrical and Planar Probes

    NASA Astrophysics Data System (ADS)

    Kim, Jin-Woo; Cho, Soon-Gook; Bae, Min-Keun; Kim, Hyung-Jin; Chung, Tae Hun; Chung, Kyu-Sun

    2013-11-01

    Electronegative plasmas are generated by adding SF6 gas to a background argon (Ar) DC plasma with parameters of n0 = 1×1010 cm3 and Te = 2 eV. The heating current of the thoriated filament was in the range of 20.5-21.5 A and the plasmas were generated under a discharge condition of 100 V/0.4 A. The amount of negative ions was controlled by adjusting the ratio of flow rate of SF6 = 0-10% to that of Ar. Plasma parameters were measured using cylindrical and planar electric probes. The behavior of electrons, which means the change in a parameter due to negative ion production, is characterized by measuring the floating and plasma potentials, and electron temperature. Electron temperature seems to increase and the potentials decrease with SF6 flow rate.

  19. High Active Nitrogen Flux Growth of (Indium) Gallium Nitride by Plasma Assisted Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    McSkimming, Brian Matthew

    Plasma-assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) has evolved over the past two decades due to progress in growth science and in the active nitrogen plasma source hardware. The transition from electron cyclotron resonance (ECR) microwave plasma sources to radio frequency (RF) plasma sources has enabled higher growth rates, reduced ion damage and improved operation at higher growth chamber pressures. Even with further improvements in RF plasma sources, PAMBE has remained primarily a research tool partially due to limitations in material growth rates. This dissertation presents results based upon two modifications of a commercially available nitrogen plasma source. These modifications have resulted in record active nitrogen fluxes, and therefore record growth rates of more than 7.6 mum/h. For optimized growth conditions in the standard metal-rich growth regime, the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 mumx3 mum) on the order of 1 nm. Secondary ion mass spectroscopy (SIMS) impurity analysis demonstrates unintentional oxygen incorporation of ˜1x1016, comparable to the metal organic chemical vapor deposition (MOCVD) grown template layer. Additionally, a revised universal growth diagram is proposed allowing the rapid determination of the metal flux needed to grow in a specific growth regime for any and all active nitrogen fluxes available. High temperature nitrogen rich PAMBE growth of GaN has been previously demonstrated as a viable alternative to the challenges presented in maintaining the Ga bilayer required by metal rich growth of GaN. This dissertation also present results demonstrating PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ˜100 °C greater than any previously reported PAMBE growth of GaN. Finally, a revised growth diagram is proposed highlighting a large growth window available at high temperatures.

  20. Simulation Study of an Extended Density DC Glow Toroidal Plasma Source

    SciTech Connect

    Granda-Gutierrez, E. E.; Piedad-Beneitez, A. de la; Lopez-Callejas, R.; Godoy-Cabrera, O. G.; Benitez-Read, J. S.; Pacheco-Sotelo, J. O.; Pena-Eguiluz, R.; Mercado-Cabrera, A.; Valencia A, R.; Barocio, S. R.

    2006-12-04

    Conventional wisdom assigns the DC glow discharge regime to plasma currents below {approx}500 mA values, beyond which the discharge falls into the anomalous glow and the turbulent arc regimes. However, we have found evidence that, during toroidal discharges, this barrier can be ostensibly extended up to 800 mA. Thus, a computer simulation has been applied to the evolution of the main electrical characteristics of such a glow discharge plasma in a toroidal vessel in order to design and construct a respective voltage/current controlled source. This should be able to generate a DC plasma in the glow regime with which currents in the range 10-3-100 A can be experimented and 109-1010 cm-3 plasma densities can be achieved to PIII optimization purposes. The plasma is modelled as a voltage-controlled current source able to be turned on whenever the breakdown voltage is reached across the gap between the anode and the vessel wall. The simulation outcome fits well our experimental measurements showing that the plasma current obeys power laws that are dependent on the power current and other control variables such as the gas pressure.

  1. Improving the empirical model for plasma nitrided AISI 316L corrosion resistance based on Mössbauer spectroscopy

    NASA Astrophysics Data System (ADS)

    Campos, M.; de Souza, S. D.; de Souza, S.; Olzon-Dionysio, M.

    2011-11-01

    Traditional plasma nitriding treatments using temperatures ranging from approximately 650 to 730 K can improve wear, corrosion resistance and surface hardness on stainless steels. The nitrided layer consists of some iron nitrides: the cubic γ ' phase (Fe4N), the hexagonal phase ɛ (Fe2 - 3N) and a nitrogen supersatured solid phase γ N . An empirical model is proposed to explain the corrosion resistance of AISI 316L and ASTM F138 nitrided samples based on Mössbauer Spectroscopy results: the larger the ratio between ɛ and γ ' phase fractions of the sample, the better its resistance corrosion is. In this work, this model is examined using some new results of AISI 316L samples, nitrided under the same previous conditions of gas composition and temperature, but at different pressure, for 3, 4 and 5 h. The sample nitrided for 4 h, whose value for ɛ/ γ ' is maximum (= 0.73), shows a slightly better response than the other two samples, nitrided for 5 and 3 h ( ɛ/ γ ' = 0.72 and 0.59, respectively). Moreover, these samples show very similar behavior. Therefore, this set of samples was not suitable to test the empirical model. However, the comparison between the present results of potentiodynamic polarization curves and those obtained previously at 4 and 4.5 torr, could indicated that the corrosion resistance of the sample which only presents the γ N phase was the worst of them. Moreover, the empirical model seems not to be ready to explain the response to corrosion and it should be improved including the γ N phase.

  2. Dynamic behaviour of dc double anode plasma torch at atmospheric pressure

    NASA Astrophysics Data System (ADS)

    Tu, X.; Chéron, B. G.; Yan, J. H.; Cen, K. F.

    2007-07-01

    An original dc double anode plasma torch which provides a long-time and highly stable atmospheric plasma jet has been devised for the purpose of hazardous waste treatment. The arc fluctuations and dynamic behaviour of the argon and argon-nitrogen plasma jets under different operating conditions have been investigated by means of classical tools, such as the statistic method, fast Fourier transform (FFT) and correlation analysis. In our experiments, the takeover mode is identified as the fluctuation characteristic of the argon plasma jet while the restrike mode is typical in the argon-nitrogen plasma dynamic behaviour. In the case of pure argon, the FFT and correlation calculation results of electrical signals exhibit the only characteristic frequency of 150 Hz, which originates from the torch power and is independent of any change in the operating conditions. It indicates that the nature of fluctuations in an argon plasma jet is mainly induced by the undulation of the tri-phase rectified power supply. In contrast, besides the same low frequency bulk fluctuation, the dynamic behaviour of the argon-nitrogen plasma jet at high frequency (4.1 kHz) is ascribed to the rapid motion of both arc roots on the anode surface. In addition, it is found that each arc root attachment is rather diffused than located at a fixed position on the anode wall in the argon plasma jet, while constricted arc roots occur when nitrogen is added into argon as the plasma working gas.

  3. DC Electric Fields and Associated Plasma Drifts Observed with the C/NOFS Satellite

    NASA Technical Reports Server (NTRS)

    Pfaff, R.; Freudenreich, H.; Bromund, K.; Rowland, D.

    2009-01-01

    Initial DC electric field observations and associated plasma drifts are presented from the Vector Electric Field Investigation (VEFI) on the Air Force Communication/Navigation Outage Forecasting System (C/NOFS) satellite. We present statistical averages of the vector fields for the first year of operations that include both the zonal and radial components of the resulting E x B plasma flows at low latitudes. Magnetic field data from the VEFI science magnetometer are used to compute the plasma flows. The DC electric field detector reveals zonal and radial electric fields that undergo strong diurnal variations, typically displaying eastward and outward-directed fields during the day and westward and downward-directed fields at night. There is considerable variation in the large scale DC electric field data, in both the daytime and nighttime cases, with enhanced structures typically observed at night. In general, the measured zonal DC electric field amplitudes include excursions that extend within the 0.4 - 2 m V/m range, corresponding to E x B drifts of the order of 30-150 m/s. The average vertical or radial electric fields may exceed the zonal fields in amplitude by a factor of 1.5 to 2. Although the data compare well, in a general sense, with previous satellite observations and statistical patterns of vertical ion drifts, the E x B drifts we report from C/NOFS rarely show a pronounced pre-reversal enhancement after sunset. We attribute this to a combination of extreme solar minimum conditions and the fact that the C/NOFS orbit of 401 by 867 km carries the probes essentially above the lower altitude regions where the wind-driven dynamo might be expected to create enhanced upwards drifts in the early evening. Evidence for wavenumber 4 tidal effects and other longitudinal signatures have been detected and will be presented. We also discuss off-equatorial electric fields and their relation to the ambient plasma density.

  4. One-dimensional hybrid simulation of the dc/RF combined driven capacitively coupled CF{sub 4} plasmas

    SciTech Connect

    Wang Shuai; Xu Xiang; Wang Younian

    2012-11-15

    We developed a one-dimensional hybrid model to simulate the dc/RF combined driven capacitively coupled plasma for CF{sub 4} discharges. The numerical results show the influence of the dc source on the plasma density distribution, ion energy distributions (IEDs), and ion angle distributions (IADs) on both RF and dc electrodes. The increase of dc voltage impels more ions with high energy to the electrode applied to the dc source, which makes the IEDs at the dc electrode shift toward higher energy and the peaks in IADs shift toward the small angle region. At the same time, it also decreases ion-energy at the RF electrode and enlarges the ion-angles which strike the RF electrode.

  5. Investigating the effect of Argon Pressure on DC and High Power Magnetron Plasmas

    NASA Astrophysics Data System (ADS)

    Bernales, Baysha; Bolat, Rustem; Anders, Andre; Slack, Jonathan; PAG Team; EETD Team

    2013-10-01

    Smart Glass is fabricated by depositing thin films of specialized material onto a transparent substrate. When a potential is applied across the surface of the Smart Glass, it changes its optical properties. Direct Current Magnetron Sputtering (DCMS) and High Power Impulse Magnetron Sputtering (HiPIMS) are two methods of PVD that are used to fabricate this material. In previous research, it has been noted that magnetron plasmas have localized ionization zones that rotate clockwise in DCMS and counterclockwise in HiPIMS. Not much is known about what causes the change in rotation. This research seeks to investigate what occurs during the first moments of plasma evolution. Both DC and high power magnetron plasmas were observed as Argon pressure was varied. It was found that pressure had a very pronounced effect on the floating-point potential signal that was received from the probes placed in the plasma. It was found that when a high-pressure jet of Argon was injected into the system, that the rotation pattern of the DC magnetron plasma was disrupted. It was also found that at certain pressures, the voltage signal was less indicative of azimuthal rotation and more indicative of z-direction breathing modes.

  6. Desizing of Starch Containing Cotton Fabrics Using Near Atmospheric Pressure, Cold DC Plasma Treatment

    NASA Astrophysics Data System (ADS)

    Prasath, A.; Sivaram, S. S.; Vijay Anand, V. D.; Dhandapani, Saravanan

    2013-03-01

    An attempt has been made to desize the starch containing grey cotton fabrics using the DC plasma with oxygen as the gaseous medium. Process conditions of the plasma reactor were optimized in terms of distance between the plates (3.2 cm), applied voltage (600 V) and applied pressure (0.01 bar) to obtain maximum desizing efficiency. No discolouration was observed in the hot water extracts of the desized sample in presence of iodine though relatively higher solvent extractable impurities (4.53 %) were observed in the plasma desized samples compared to acid desized samples (3.38 %). Also, significant weight loss, improvements in plasma desized samples were observed than that of grey fabrics in terms of drop absorbency.

  7. Volt-ampere characteristics of a nitrogen DC plasma arc with anode melting

    NASA Astrophysics Data System (ADS)

    Zhao, Peng; Ni, Guo-Hua; Meng, Yue-Dong; Nagatsu, Masaaki

    2013-06-01

    The characteristics of a nitrogen arc using a graphite cathode and a melting anode in a pilot-scale plasma furnace are investigated. The voltage is examined as a function of current and apparent plasma length. The voltage increases non-linearly with the increase of apparent plasma length, with the current fixed. The experimental data so obtained are compared with the predictions of the Bowman model for the electric arc, and with numerical simulations as well. The level of agreement between the experimental data at the melting anode and the numerical predictions confirms the suitability of the proposed the Bowman model. These characteristics are relevant to the engineering design and evaluation of a DC plasma furnace and reactor for the treatment of hazardous fly ash waste.

  8. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOEpatents

    Murduck, James M.; Lepetre, Yves J.; Schuller, Ivan K.; Ketterson, John B.

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

  9. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOEpatents

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-07-04

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

  10. Effects of Nozzle Configuration on Flow Characteristics inside DC Plasma Torch

    NASA Astrophysics Data System (ADS)

    Yuan, X. Q.; Li, H.; Zhao, T. Z.; Guo, W. K.; Xu, P.

    2004-10-01

    The effects of nozzle configuration on the characteristics of flow inside DC arc plasma torches are investigated by numerical simulation. The plasma torches with three typical types of nozzle configuration are used in this paper, and these torches are the SG-100 series commercial products of PRAXAIR Thermal Spray Products Inc. The assumption of steady-state, axis-symmetric, local thermodynamic equilibrium, and optically thin plasma is adopted in a two-dimensional modeling of plasma flow inside a plasma torch. The PHOENICS software is used for solving the governing equations, i.e., the conservation equations of mass, momentum, and energy. The calculated arc voltages are consistent with the experimental results when arc current, gas inflow rate, and working gas are the same. Temperature, axial velocity contours inside the plasma torches, and profiles along the torch axis and at the outlet section are presented to show the plasma flow characteristics. Comparisons are made among these torches in detail and the results show that torches with different anode nozzle configurations produce different characteristic plasma flows.

  11. Synthesis of Nanosized Titanium Oxide and Nitride Through Vacuum Arc Plasma Expansion Technique

    NASA Astrophysics Data System (ADS)

    Lepeshev, A. A.; Karpov, I. V.; Ushakov, A. V.; Fedorov, L. Yu.; Shaihadinov, A. A.

    2016-12-01

    Physical vapor deposition techniques such vacuum arc plasma deposition — which are very commonly used in thin film technology — appear to hold much promise for the synthesis of nanocrystalline thin films as well as nanoparticles. Monodisperse and spherical titanium oxide (TiO2) and nitride nanoparticles were produced at room temperature as a cluster beam in the gas phase using a cluster-deposition source. Using the basic principles of the gas condensation method, this study has developed vacuum arc nanoparticle synthesis system. We demonstrate that major process deposition parameter is the pressure in the plasma chamber. This is the major advantage of these techniques over thermal evaporation. Our method affords TiN powders with high specific surface areas exceeding 200m2g-1. TEM micrograph of TiO2 nanoparticles prepared at an oxygen pressure of 60Pa show an average particle size of 6nm. TiO2 nanoparticles prepared at an oxygen pressure of 70Pa were observed to not have a reduced average particle size.

  12. Preparation of cubic boron nitride thin film by the helicon wave plasma enhanced chemical vapor deposition

    SciTech Connect

    Kim, S.; Kim, I.; Kim, K.

    1996-12-01

    Cubic boron nitride ({ital c}-BN) film was deposited on Si(100) substrate using the chemical vapor deposition process assisted by high density plasma of Helicon wave with Borazine (B{sub 3}N{sub 3}H{sub 6}) precursor. It was found that the bombardment of ions with high flux and energy onto the film was necessarily required for synthesizing a {ital c}-BN film. Increasing a negative rf bias on the substrate increased the formation fraction of {ital c}-BN in the film. A nearly pure {ital c}-BN phase was synthesized at the conditions of plasma density in the reactor and rf substrate bias, above 10{sup 11} cm{sup {minus}3} and {minus}350 V, respectively. The phase identification of BN film was carried out by the transmission electron microscopy as well as Fourier transformed infrared spectroscopy. The infrared spectra for {ital c}-BN film synthesized at the rf bias of {minus}350 V appeared at 1093 cm{sup {minus}1} with a strong single peak, which is close to a value for the characteristic vibration mode of bulk {ital c}-BN (1065 cm{sup {minus}1}). The {ital c}-BN in the film was also confirmed and found to be a fine poly-crystalline with the grain sizes ranging from 200 to 400 A. {copyright} {ital 1996 American Institute of Physics.}

  13. Microwave induced plasma (MIP) brazing of silicon nitride to stainless steel

    SciTech Connect

    Samandi, M.; Bate, M.; Donnan, R.; Miyake, S.

    1996-12-31

    In an attempt to accelerate the process of joining of metals to ceramics, a new rapid brazing technology has been developed. In this process, referred to as Microwave Induced Plasma (MIP) brazing, a microwave plasma is used to rapidly heat the ceramic and metal to the melting temperature of the reactive braze material. The heating rate obtained by MIP could be many times faster than those achieved by conventional resistive heating in a tube furnace. The fast heating rate has no detrimental effect on the joint quality and in fact results in the formation of a thick interfacial film suggesting significant interdiffusion between the braze and ceramic, possibly stimulated by the microwave radiation. In this paper the experimental arrangement of the MIP system is described. The unique capability of the MIP heating is demonstrated by successful joining of hot pressed nitride to stainless steel using reactive metal brazing. The results of microstructural characterization of the joints carried out by SEM and EDS will also be presented.

  14. Direct probing of anode arc root dynamics and voltage instability in a dc non-transferred arc plasma jet

    NASA Astrophysics Data System (ADS)

    Ghorui, S.; Tiwari, N.; Meher, K. C.; Jan, A.; Bhat, A.; Sahasrabudhe, S. N.

    2015-12-01

    The transient dynamics of the anode arc root in a dc non-transferred arc plasma torch is captured through fast photography and directly correlated with the associated voltage instability for the first time. The coexistence of multiple arc roots, the transition to a single arc root, root formation and extinction are investigated for the steady, takeover and re-strike modes of the arc. Contrary to the usual concept, the emerging plasma jet of a dc non-transferred arc plasma torch is found to carry current. An unusually long self-propelled arc plasma jet, a consequence of the phenomenon, is demonstrated.

  15. Optimization Study of Pulsed DC Nitrogen-Hydrogen Plasma in the Presence of an Active Screen Cage

    NASA Astrophysics Data System (ADS)

    Saeed, A.; W. Khan, A.; F., Jan; U. Shah, H.; Abrar, M.; Zaka-Ul-Islam, M.; Khalid, M.; Zakaullah, M.

    2014-05-01

    A glow discharge plasma nitriding reactor in the presence of an active screen cage is optimized in terms of current density, filling pressure and hydrogen concentrations using optical emission spectroscopy (OES). The samples of AISI 304 are nitrided for different treatment times under optimum conditions. The treated samples were analyzed by X-ray diffraction (XRD) to explore the changes induced in the crystallographic structure. The XRD pattern confirmed the formation of iron and chromium nitrides arising from incorporation of nitrogen as an interstitial solid solution in the iron lattice. A Vickers microhardness tester was used to evaluate the surface hardness as a function of treatment time (h). The results showed clear evidence of improved surface hardness and a substantial amount of decrease in the treatment time compared with the previous work.

  16. Reactive Plasma-Sprayed Aluminum Nitride-Based Coating Thermal Conductivity

    NASA Astrophysics Data System (ADS)

    Shahien, Mohammed; Yamada, Motohiro; Fukumoto, Masahiro; Egota, Kazumi; Okamoto, Kenji

    2015-12-01

    Recently, thick aluminum nitride/alumina (AlN/Al2O3) composite coatings were successfully fabricated through the reactive plasma spraying of fine Al2O3/AlN mixture in the N2/H2 atmospheric plasma. The coatings consist of AlN, Al5O6N, γ-Al2O3, and α-Al2O3 phases. This study will evaluate the thermal conductivity of these complicated plasma-sprayed coatings and optimize the controlling aspects. Furthermore, the influence of the process parameters on the coatings thermal conductivity will be investigated. The fabricated coatings showed very low thermal conductivity (2.43 W/m K) compared to the AlN sintered compacts. It is attributed to the phase composition of the fabricated coatings, oxide content, and porosity. The presence of Al2O3, Al5O6N and the high coating porosity decreased its thermal conductivity. The presence of oxygen in the AlN lattice creates Al vacancies which lead to phonon scattering and therefore suppressed the thermal conductivity. The formation of γ-Al2O3 phase in the coating leads to further decrease in its conductivity, due to its lower density compared to the α-phase. Moreover, the high porosity of the coating strongly suppressed the conductivity. This is due to the complicated microstructure of plasma spray coatings (splats, porosity, and interfaces, particularly in case of reactive spray process), which obviously lowered the conductivity. Furthermore, the measured coating density was lower than the AlN value and suppressed the coating conductivity. In addition, the spraying parameter showed a varied effect on the coating phase composition, porosity, density, and therefore on its conductivity. Although the N2 gas flow improved the nitride content, it suppressed the thermal conductivity gradually. It is attributed to the further increase in the porosity and further decrease in the density of the coatings with the N2 gas. Furthermore, increasing the arc did not show a significant change on the coating thermal conductivity. On the other hand

  17. A bulk plasma model for dc and HiPIMS magnetrons

    NASA Astrophysics Data System (ADS)

    Brenning, N.; Axnäs, I.; Raadu, M. A.; Lundin, D.; Helmerson, U.

    2008-11-01

    A plasma discharge model has been developed for the bulk plasma (also called the extended presheath) in sputtering magnetrons. It can be used both for high power impulse magnetron sputtering (HiPIMS) and conventional dc sputtering magnetrons. Demonstration calculations are made for the parameters of the HiPIMS sputtering magnetron at Linköping University, and also benchmarked against results in the literature on dc magnetrons. New insight is obtained regarding the structure and time development of the currents, the electric fields and the potential profiles. The transverse resistivity ηbottom has been identified as having fundamental importance both for the potential profiles and for the motion of ionized target material through the bulk plasma. New findings are that in the HiPIMS mode, as a consequence of a high value of ηbottom, (1) there can be an electric field reversal that in our case extends 0.01-0.04 m from the target, (2) the electric field in the bulk plasma is typically an order of magnitude weaker than in dc magnetrons, (3) in the region of electric field reversal the azimuthal current is diamagnetic in nature, i.e. mainly driven by the electron pressure gradient, and actually somewhat reduced by the electron Hall current which here has a reversed direction and (4) the azimuthal current above the racetrack can, through resistive friction, significantly influence the motion of the ionized fraction of the sputtered material and deflect it sideways, away from the target and towards the walls of the magnetron.

  18. Modelling chemical reactions in dc plasma inside oxygen bubbles in water

    NASA Astrophysics Data System (ADS)

    Takeuchi, N.; Ishii, Y.; Yasuoka, K.

    2012-02-01

    Plasmas generated inside oxygen bubbles in water have been developed for water purification. Zero-dimensional numerical simulations were used to investigate the chemical reactions in plasmas driven by dc voltage. The numerical and experimental results of the concentrations of hydrogen peroxide and ozone in the solution were compared with a discharge current between 1 and 7 mA. Upon increasing the water vapour concentration inside bubbles, we saw from the numerical results that the concentration of hydrogen peroxide increased with discharge current, whereas the concentration of ozone decreased. This finding agreed with the experimental results. With an increase in the discharge current, the heat flux from the plasma to the solution increased, and a large amount of water was probably vaporized into the bubbles.

  19. Autowaves in a dc complex plasma confined behind a de Laval nozzle

    NASA Astrophysics Data System (ADS)

    Fink, M. A.; Zhdanov, S. K.; Schwabe, M.; Thoma, M. H.; Höfner, H.; Thomas, H. M.; Morfill, G. E.

    2013-05-01

    Experiments to explore stability conditions and topology of a dense microparticle cloud supported against gravity by a gas flow were carried out. By using a nozzle-shaped glass insert within the glass tube of a dc discharge plasma chamber a weakly ionized gas flow through a de Laval nozzle was produced. The experiments were performed using neon gas at a pressure of 100 Pa and melamine-formaldehyde particles with a diameter of 3.43 μm. The capturing and stable global confining of the particles behind the nozzle in the plasma were demonstrated. The particles inside the cloud behaved as a single convection cell inhomogeneously structured along the nozzle axis in a tube-like manner. The pulsed acceleration localized in the very head of the cloud mediated by collective plasma-particle interactions and the resulting wave pattern were studied in detail.

  20. In-Vitro Biocompatibility Studies of Plasma-Nitrided Titanium Alloy β-21S Using Fibroblast Cells

    NASA Astrophysics Data System (ADS)

    Mohan, L.; Raja, M. D.; Uma, T. S.; Rajendran, N.; Anandan, C.

    2016-04-01

    In the present work, titanium alloy β-21S was nitrided in a low-pressure RF plasma with 100% nitrogen and 20% hydrogen-diluted nitrogen at 800 °C for 4 h and the samples were evaluated for in-vitro biocompatibility by using NIH 3T3 fibroblast cell line. Cellular behavior was evaluated in terms of cell morphology and its viability. FESEM was exploited to observe the morphology of the cells fixed over the surface of the implant. Fibroblasts were seemed to be well distributed over the surface with its characteristic spindle-like shape. Over all, the results indicate that nitriding provided a compatible surface for cell attachment and cell growth. Cell viability and proliferation was assessed by using standard MTT assay. Compared with substrate, the nitrided samples exhibited high-percentage cell viability demonstrating their increased biocompatibility. In addition, the nitrided samples facilitate bone-like apatite formation and exhibited a gradual increase of apatite formation after immersion in Hanks' solution.

  1. Effects of Gas Flow Rate on the Discharge Characteristics of a DC Excited Plasma Jet

    NASA Astrophysics Data System (ADS)

    Li, Xuechen; Jia, Pengying; Di, Cong; Bao, Wenting; Zhang, Chunyan

    2015-09-01

    A direct current (DC) source excited plasma jet consisting of a hollow needle anode and a plate cathode has been developed to form a diffuse discharge plume in ambient air with flowing argon as the working gas. Using optical and electrical methods, the discharge characteristics are investigated for the diffuse plasma plume. Results indicate that the discharge has a pulse characteristic, under the excitation of a DC voltage. The discharge pulse corresponds to the propagation process of a plasma bullet travelling from the anode to the cathode. It is found that, with an increment of the gas flow rate, both the discharge plume length and the current peak value of the pulsed discharge decrease in the laminar flow mode, reach their minima at about 1.5 L/min, and then slightly increase in the turbulent mode. However, the frequency of the pulsed discharge increases in the laminar mode with increasing the argon flow rate until the argon flow rate equals to about 1.5 L/min, and then slightly decreases in the turbulent mode. supported by National Natural Science Foundation of China (Nos. 10805013, 11375051), Funds for Distinguished Young Scientists of Hebei Province, China (No. A2012201045), Department of Education for Outstanding Youth Project of China (No. Y2011120), and Youth Project of Hebei University of China (No. 2011Q14)

  2. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  3. Nanoindentation of plasma-deposited nitrogen-rich silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Soh, Martin T. K.; Fischer-Cripps, A. C.; Savvides, N.; Musca, C. A.; Faraone, L.

    2006-07-01

    Nanoindentation was performed on plasma-deposited nitrogen-rich silicon nitride thin films deposited on various substrates between 150 and 300°C. A very simple and effective depth-profiling method is introduced, which involves indentation of thin films deposited on substrates with different mechanical properties. The primary advantage of this method is that it avoids the complications associated with many of the complex mathematical models available to deconvolve thin film mechanical properties, while nevertheless allowing the user to visually identify thin film properties. This method is demonstrated on our thin films, which have a hardness between 14 and 21GPa, and reduced modulus between 120 and 160GPa. The initial rise in hardness at low contact depths, commonly attributed to an indentation-size effect, is shown to be due to elastic contact between the indenter and thin film surface. This demonstrates the perils of blindly following the 10% rule for hardness calculation. The contribution of elastic and plastic deformations from nanoindentation is used to clarify the physical meaning of hardness and reduced modulus.

  4. ECR plasma synthesis of silicon nitride films on GaAs and InSb

    SciTech Connect

    Barbour, J.C.; Lovejoy, M.L.; Ashby, C.I.H.; Howard, A.J.; Custer, J.S.; Shul, R.J.

    1993-12-31

    Growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiN{sub x}) films were grown at temperatures from 30 to 250 C on GaAs substrates. Stress in films was measured as a function of bias applied during growth (varied from 0 to 200 V), and of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiN{sub x} growth without an applied bias (ion energy {congruent}30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of -200 V showed the largest reduction in film stress but also the smallest PL signal.

  5. Effect of Low-Energy Ions on Plasma-Enhanced Deposition of Cubic Boron Nitride

    NASA Astrophysics Data System (ADS)

    Torigoe, M.; Fukui, S.; Teii, K.; Matsumoto, S.

    2015-09-01

    The effect of low-energy ions on deposition of cubic boron nitride (cBN) films in an inductively coupled plasma with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where sp2-bonded BN phase only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are estimated in the range of a few eV to 35 eV and 100 to 130, respectively. The impact of negative ions is presumed to be negligible due to their low kinetic energy relative to the sheath potential over the substrate surface. The impact of positive ions with high ion to boron flux ratios is primarily responsible for reduction of the ion energy for cBN film deposition. Work supported in part by a Grant-in-Aid for Scientific Research (B), a Funding Program for Next Generation World-Leading Researchers, and an Industrial Technology Research Grant Program 2008.

  6. Effect of hydrogen addition on the deposition of titanium nitride thin films in nitrogen added argon magnetron plasma

    NASA Astrophysics Data System (ADS)

    Saikia, P.; Bhuyan, H.; Diaz-Droguett, D. E.; Guzman, F.; Mändl, S.; Saikia, B. K.; Favre, M.; Maze, J. R.; Wyndham, E.

    2016-06-01

    The properties and performance of thin films deposited by plasma assisted processes are closely related to their manufacturing techniques and processes. The objective of the current study is to investigate the modification of plasma parameters occurring during hydrogen addition in N2  +  Ar magnetron plasma used for titanium nitride thin film deposition, and to correlate the measured properties of the deposited thin film with the bulk plasma parameters of the magnetron discharge. From the Langmuir probe measurements, it was observed that the addition of hydrogen led to a decrease of electron density from 8.6 to 6.2  ×  (1014 m‑3) and a corresponding increase of electron temperature from 6.30 to 6.74 eV. The optical emission spectroscopy study reveals that with addition of hydrogen, the density of argon ions decreases. The various positive ion species involving hydrogen are found to increase with increase of hydrogen partial pressure in the chamber. The thin films deposited were characterized using standard surface diagnostic tools such as x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), x-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS). Although it was possible to deposit thin films of titanium nitride with hydrogen addition in nitrogen added argon magnetron plasma, the quality of the thin films deteriorates with higher hydrogen partial pressures.

  7. Aerosynthesis: Growths of Vertically Aligned Carbon Nanofibers with Air DC Plasma

    SciTech Connect

    Kodumagulla, A; Varanasi, V; Pearce, Ryan; Wu, W-C; Hensley, Dale K; Tracy, Joseph B; McKnight, Timothy E; Melechko, Anatoli

    2014-01-01

    Vertically aligned carbon nanofibers (VACNF) have been synthesized in a mixture of acetone and air using catalytic DC plasma enhanced chemical vapor deposition. Typically, ammonia or hydrogen is used as etchant gas in the mixture to remove carbon that otherwise passivates the catalyst surface and impedes growth. Our demonstration of using air as the etchant gas opens up a possibility that ion etching could be sufficient to maintain the catalytic activity state during synthesis. It also demonstrates the path toward growing VACNFs in open atmosphere.

  8. Interaction of deuterium plasma with sputter-deposited tungsten nitride films

    NASA Astrophysics Data System (ADS)

    Gao, L.; Jacob, W.; Meisl, G.; Schwarz-Selinger, T.; Höschen, T.; von Toussaint, U.; Dürbeck, T.

    2016-01-01

    Magnetron-sputtered tungsten nitride (WNx) films were used as a model system to study the behaviour of re-deposited WNx layers which could form in fusion devices with tungsten (W) wall during nitrogen seeding. The interaction of such WNx layers with deuterium (D) plasmas was investigated in dedicated laboratory experiments. D retention and N removal due to D plasma exposure (D flux: 9.9  ×  1019 D m-2 s-1, ion energy 215 eV) at different temperatures were measured with ion beam analysis (IBA). Low-energy argon sputtering followed by IBA was applied to resolve the D distribution in the top-most surface of WNx with significantly improved depth resolution compared with the standard D depth profiling method by nuclear reaction analysis. Experimentally determined thicknesses for the penetration of D in WNx were compared with the penetration depth for D calculated in SDTrimSP simulations. Results show that D is only retained within the ion penetration range for samples exposed at 300 K. In contrast to the 300 K case, D diffuses beyond the implantation depth in a sample exposed at 600 K. However, the D penetration depth is much lower than in pure W at comparable conditions. The total amount of retained D in WNx at 600 K is by 50% lower than for implantation at 300 K with the same D fluence. Nitrogen is removed only within the D ion range.

  9. Microstructures and Mechanical Performance of Plasma-Nitrided Al0.3CrFe1.5MnNi0.5 High-Entropy Alloys

    NASA Astrophysics Data System (ADS)

    Tang, Wei-Yeh; Chuang, Ming-Hao; Lin, Su-Jien; Yeh, Jien-Wei

    2012-07-01

    This study investigates the effect of plasma nitriding at 798 K (525 °C) on microstructures and the mechanical performance of Al0.3CrFe1.5MnNi0.5 high-entropy alloys (HEAs) obtained using different cast and wrought processing. All the alloys can be well nitride, with a thickness of around 80 μm, and attain a peak hardness level around Hv 1300 near the surface. The main nitride phases are CrN, AlN, and (Mn, Fe)4N. Those of the substrates are bcc, fcc, Al-, and Ni-rich B2 precipitates, and ρ phase. Their relative amounts depend on the prior processing and also change under the heat treatment during nitriding. The formation of ρ phase during nitriding could in-situ harden the substrate to attain the suitable level required for wear applications. This gives the advantage in simplifying the processing for making a wear-resistance component or a mold since austenitizing, quench hardening, and tempering required for steels such as SACM and SKD steels are no longer required and final finishing can be accomplished before nitriding. Nitrided Al0.3CrFe1.5MnNi0.5 samples have much better wear resistance than un-nitrided ones by 49 to 80 times and also exhibit superior adhesive wear resistance to conventional nitrided alloys: nitriding steel SACM-645 (AISI 7140), 316 stainless steel, and hot-mold steel SKD-61 (AISI H13) by 22 to 55 times depending on prior processing. The superiority is due to the fact that the present nitrided alloys possess a much thicker highly hardened layer than the conventional alloys.

  10. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    SciTech Connect

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  11. Study of the effect of plasma-striking atmosphere on Fe-oxidation in thermal dc arc-plasma processing

    SciTech Connect

    Banerjee, I.; Khollam, Y. B.; Mahapatra, S. K.; Das, A. K.; Bhoraskar, S. V.

    2010-11-15

    The effect of plasma-striking atmosphere: air and air+Ar-gas on the crystallization of Fe-oxide phases was studied using dc thermal arc-plasma processing route. The powders were characterized by x-ray diffraction, vibrating sample magnetometry, transmission electron microscopy, and Moessbauer spectroscopy techniques. At room temperature and O{sub 2} rich atmosphere, arc-evaporated Fe{sup 2+} ions oxidize into either {gamma}-Fe{sub 2}O{sub 3} or Fe{sub 3}O{sub 4} depending upon the combining ratio of Fe with molecular O{sub 2}. Fe/O ratio could be adjusted using proper flow rate of Ar gas to crystallize the pure {gamma}-Fe{sub 2}O{sub 3}.

  12. Study on effect of plasma surface treatments for diamond deposition by DC arc plasmatron.

    PubMed

    Kang, In-Je; Joa, Sang-Beom; Lee, Heon-Ju

    2013-11-01

    To improve the thermal conductivity and wear resistance of ceramic materials in the field of renewable energy technologies, diamond coating by plasma processing has been carried out in recent years. This study's goal is to improve diamond deposition on Al2O3 ceramic substrates by plasma surface treatments. Before diamond deposition was carried out in a vacuum, plasma surface treatments using Ar gas were conducted to improve conditions for deposition. We also conducted plasma processing for diamond deposition on Al2O3 ceramic substrates using a DC arc Plasmatron. The Al2O3 ceramic substrates with diamond film (5 x 15 mm2), were investigated by SEM (Scanning Electron Microscopy), AFM (Atomic Force Microscopy) and XRD (X-ray Diffractometer). Then, the C-H stretching of synthetic diamond films by FTIR (Fourier Transform Infrared Spectroscopy) was studied. We identified nanocrystalline diamond films on the Al2O3 ceramic substrates. The results showed us that the deposition rate of diamond films was 2.3 microm/h after plasma surface treatments. Comparing the above result with untreated ceramic substrates, the deposition rate improved with the surface roughness of the deposited diamond films. PMID:24245257

  13. Some numerical simulation results of swirling flow in d.c. plasma torch

    NASA Astrophysics Data System (ADS)

    Felipini, C. L.; Pimenta, M. M.

    2015-03-01

    We present and discuss some results of numerical simulation of swirling flow in d.c. plasma torch, obtained with a two-dimensional mathematical model (MHD model) which was developed to simulate the phenomena related to the interaction between the swirling flow and the electric arc in a non-transferred arc plasma torch. The model was implemented in a computer code based on the Finite Volume Method (FVM) to enable the numerical solution of the governing equations. For the study, cases were simulated with different operating conditions (gas flow rate; swirl number). Some obtained results were compared to the literature and have proved themselves to be in good agreement in most part of computational domain regions. The numerical simulations performed with the computer code enabled the study of the behaviour of the flow in the plasma torch and also study the effects of different swirl numbers on temperature and axial velocity of the plasma flow. The results demonstrated that the developed model is suitable to obtain a better understanding of the involved phenomena and also for the development and optimization of plasma torches.

  14. Influence of injected silver content on synthesis of silver coated nickel particles by DC thermal plasma

    NASA Astrophysics Data System (ADS)

    Park, Si Taek; Kim, Tae-Hee; Park, Dong-Wha

    2016-06-01

    Silver nanoparticle-coated spherical nickel particles were prepared from a mixture of micro-sized silver and nickel as raw materials by DC thermal plasma treatment. The mixture of micro-sized silver and nickel powders was injected into the high-temperature region of an argon thermal plasma jet. Although the silver, with its very high thermal conductivity and relatively low boiling point, was thoroughly evaporated by this process, nickel was not evaporated perfectly because of its comparatively low thermal conductivity and high boiling point. The rough nickel powder was spheroidized as it melted. Finally, silver evaporated by the thermal plasma quickly condensed into nanoparticles on the surfaces of the micro-sized spherical nickel particles, aided by the sharp temperature gradient of the thermal plasma jet. With varying the ratios of silver to nickel feedstock from 1:10 to 5:1, the products synthesized in each condition were examined by XRD, XPS, FE-SEM, and FE-TEM. More silver nanoparticles were attached on the nickel by increasing the injected feedstock to 9.8 at% silver. Meanwhile, a decrease of silver in the products was observed when larger amounts of silver were introduced to the thermal plasma jet. The exposed silver components decreased with greater proportions of silver feedstock because of the metal's dendritic structure and the formation of silver-coated silver particles.

  15. Characteristics of a plasma production and a laser-induced discharge by a CO2 laser on DC electric field

    SciTech Connect

    Ihara, S.; Maiguma, T.; Satoh, S.; Ishimine, M.; Yamabe, C.

    1996-05-01

    The experiments of a laser-induced discharge were carried out with a CO{sub 2} laser radiation in the atmospheric ambient gases under a DC electric field applied. In these experiments, both of the laser-induced discharge and the plasma production by the CO{sub 2} laser were suppressed with an increasing DC electric field strength. Although the laser-produced plasma was generated between the electrodes without DC electric field, both the probability of induced-discharge and plasma production decreased with the applied voltage across the electrodes. In this paper, the mechanisms of the phenomena for the suppression of the plasma production under applying the electric field between electrodes were discussed. It was found that the attachment processes of electrons most likely played an important role in this phenomena. {copyright} {ital 1996 American Institute of Physics.}

  16. Comparison of CO2 and oxygen DC submerged thermal plasmas for decomposition of carboxylic acid in aqueous solution

    NASA Astrophysics Data System (ADS)

    Safa, S.; Hekmat-Ardakan, A.; Soucy, G.

    2014-11-01

    The feasibility of the carboxylic acid decomposition with two different direct current (DC) thermal plasma torches was investigated. An oxygen DC submerged thermal plasma torch and a newly designed submerged DC plasma torch operating with a mixture of carbon dioxide and methane (CO2/CH4) were used. Sebacic acid was selected as a representative of pollutants in the most wastewater produced by chemical process industries. The effect of different operational conditions including treatment time, the reactor pressure as well as the role of oxidizing agents such as (H2O2) were investigated on the decomposition rate of sebacic acid. Concentration of sebacic acid was quantified by Ion Chromatography/Mass Spectrometry (IC/MS). The oxygen plasma showed higher decomposition rate in basic medium. Adding H2O2 into aqueous solution enhanced the sebacic acid decomposition rate with the CO2/CH4 plasma up to the same decomposition rate of the oxygen plasma. Increasing the pressure also increased the decomposition rate for both plasmas with an increase twice higher for the CO2/CH4 plasma than that of the oxygen plasma. This work therefore presents the conditions in which these plasmas can provide the same decomposition rate for contaminants in aqueous solution.

  17. Ion bombardment-induced mechanical stress in plasma-enhanced deposited silicon nitride and silicon oxynitride films

    SciTech Connect

    Claassen, W.A.P.

    1987-03-01

    The authors have studied the influence of different deposition conditions on the mechanical stress of silicon nitride and silicon oxynitride layers formed by plasma-enhanced deposition onto silicon substrates. It appears that the mechanical stress of the as-deposited silicon (oxy)nitride layer is a combined effect of the extent of ion bombardment and the deposition temperature on the hydrogen desorption rate. Deposited films show a tensile stress character when the hydrogen desorption rate is thermally controlled, whereas in the case of an ion-bombardment-controlled hydrogen desorption rate the deposited films have a compressive stress. It is also shown that due to annealing at temperatures above the deposition temperature the films are densified as a result of hydrogen desorption and cross-linking.

  18. On the nature of carbon nitride nanocrystals formed by plasma enhanced chemical vapor deposition and rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Lim, S. F.; Wee, A. T. S.; Lin, J.; Chua, D. H. C.; Huan, C. H. A.

    1999-06-01

    Using high-resolution transmission electron microscopy (HRTEM) and atomic force microscopy, carbon nitride nanocrystals were observed in films deposited by RF plasma-enhanced chemical vapor deposition (RF-PECVD) followed by a rapid thermal annealing (RTA) to 1000°C. The (30±10) nm crystals are embedded in an amorphous matrix, and the interplanar lattice spacings suggest that the crystals are the hexagonal β-carbon nitride phase. Investigations using Fourier transform infra-red spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) of the films show that RTA increases the sp 3 content of the films but decreases the CN (nitrile), N-H and C-H content.

  19. Structural and Dynamical Properties of Microrod Dusty Plasma in a Uniform DC Discharge under Microgravity

    SciTech Connect

    Usachev, Alexander; Zobnin, Andrey; Petrov, Oleg; Fortov, Vladimir

    2008-09-07

    In present experiment an ordering and dynamics of monodisperse nylon rods (D = 10 {mu}m, L = 300 {mu}m) in a uniform DC gas discharge plasma under microgravity have been investigated. Ordered rod structures were registered in DC discharge with a rod concentration of 400-8000 cm{sup -3} and a neon pressure range of 20-50 Pa. The structures revealed orientationally ordered hexagonal structures. DC discharge became unstable at rod number density more then 8000 cm{sup -3}. Rod drift velocities in a permanent electric field were measured for the neon pressure range. Dust acoustic instability ({nu}{approx}0.4{+-}0.1 Hz, {lambda}{approx}1.1{+-}0.4 cm, C{sub DAW}{approx}0.5 cm/s) in rod cloud was observed at a neon pressure of 25 Pa and a rod number density of 1500 cm{sup -3}. Using the 'low' frequency approximation of the linearized DAW dispersion relation and the measured rod drift velocity a rod electric charge had been estimated as Z{sub R}{approx}150000e.

  20. Desorption behavior of zinc atoms from zinc-sulfate solution irradiated with pulsed DC plasma

    NASA Astrophysics Data System (ADS)

    Takaba, Takafumi; Suzuki, Haruka; Toyoda, Hirotaka

    2016-07-01

    A DC pulsed plasma ignited between a metal needle and zinc sulfate (ZnSO4) solution electrode was used to investigate Zn metal desorption from an electrolyte solution. Using an ICCD camera and optical band-pass filter, 2D atomic absorption spectroscopy was carried out during irradiation of pulsed plasma to the surface of the solution. The time-resolved measurement of Zn atoms released to the gas phase revealed that the Zn desorption rate monotonically increased with increasing number of discharge repetitions. The surface temperature of the electrolyte solution was observed with a thermographic camera, and correlations between the H2O and Zn desorption rate were inspected. The correlation between the H2O and Zn desorption rate suggested that Zn desorption is assisted not only by the electric field of the discharge but also by H2O evaporating from the solution.

  1. 'PK-4' - Laser-driven shear flow in a DC discharge complex plasma

    SciTech Connect

    Kretschmer, M.; Hoefner, H.; Thoma, M.; Fink, M.; Ratynskaia, S.; Morfill, G.; Tarantik, K.; Fortov, V.; Petrov, O.; Usachev, A.; Zobnin, A.; Gerasimov, Yu.

    2005-10-31

    Flows, shear flows, laminar and turbulent flows on the microscopic scales are one of the fundamental issues in fluid dynamics. Due to their special properties, complex plasmas provide an excellent opportunity to study these flows, even on the scale of individual particles. To this end, experiments were conducted in the 'Plasmakristall 4' (PK-4) experimental device that uses the positive column of a high voltage DC discharge to produce complex (dusty) plasmas. The linear geometry of PK-4 provides the opportunity to study all these kinds of flow phenomena as well as waves and collisions. Since gravity distorts most of the effects to be studied with PK-4, the facility is planned to be operated onboard the International Space Station ISS from 2008. In order to generate a high-velocity shear flow PK-4 is now upgraded with a 20W manipulation laser system.

  2. Growth of aligned carbon nanotubes on carbon microfibers by dc plasma-enhanced chemical vapor deposition

    SciTech Connect

    Chen, L H.; AuBuchon, J F.; Chen, I C.; Daraio, C; Ye, X R.; Gapin, A; Jin, Sungho; Wang, Chong M.

    2006-01-16

    It is shown that unidirectionally aligned carbon nanotubes can be grown on electrically conductive network of carbon microfibers via control of buffer layer material and applied electric field during dc plasma chemical vapor deposition growth. Ni catalyst deposition on carbon microfiber produces relatively poorly aligned nanotubes with significantly varying diameters and lengths obtained. The insertion of Ti 5 nm thick underlayer between Ni catalyst layer and C microfiber substrate significantly alters the morphology of nanotubes, resulting in much better aligned, finer diameter, and longer array of nanotubes. This beneficial effect is attributed to the reduced reaction between Ni and carbon paper, as well as prevention of plasma etching of carbon paper by inserting a Ti buffer layer. Such a unidirectionally aligned nanotube structure on an open-pore conductive substrate structure may conveniently be utilized as a high-surface-area base electrodes for fuel cells, batteries, and other electrochemical and catalytic reactions.

  3. Inertization of heavy metals present in galvanic sludge by DC thermal plasma.

    PubMed

    Leal Vieira Cubas, Anelise; de Medeiros Machado, Marília; de Medeiros Machado, Marina; Gross, Frederico; Magnago, Rachel Faverzani; Moecke, Elisa Helena Siegel; Gonçalvez de Souza, Ivan

    2014-01-01

    Galvanic sludge results from the treatment of effluents generated by the industrial metal surface treatment of industrial material, which consists in the deposition of a metal on a surface or a metal surface attack, for example, electrodeposition of conductors (metals) and non conductive, phosphate, anodizing, oxidation and/or printed circuit. The treatment proposed here is exposure of the galvanic sludge to the high temperatures provided by thermal plasma, a process which aims to vitrify the galvanic sludge and render metals (iron, zinc, and chromium) inert. Two different plasma reactors were assembled: with a DC transferred arc plasma torch and with a DC nontransferred arc plasma torch. In this way it was possible to verify which reactor was more efficient in the inertization of the metals and also to investigate whether the addition of quartzite sand to the sludge influences the vitrification of the material. Quantification of water content and density of the galvanic raw sludge were performed, as well as analyzes of total organic carbon (TOC) and identify the elements that make up the raw sludge through spectroscopy X-ray fluorescence (XRF). The chemical composition and the form of the pyrolyzed and vitrified sludge were analyzed by scanning electron microscopy with energy-dispersive X-ray spectrometer (SEM-EDS) analysis, which it is a analysis that shows the chemical of the sample surface. The inertization of the sludge was verified in leaching tests, where the leachate was analyzed by flame atomic absorption spectroscopy (FAAS). The results of water content and density were 64.35% and 2.994 g.cm(-3), respectively. The TOC analysis determined 1.73% of C in the sample of galvanic raw sludge, and XRF analysis determined the most stable elements in the sample, and showed the highest peaks (higher stability) were Fe, Zn, and Cr. The efficiency of the sludge inertization was 100% for chromium, 99% for zinc, and 100% for iron. The results also showed that the most

  4. Model for nitridation of nanoscale SiO{sub 2} thin films in pulsed inductively coupled N{sub 2} plasma

    SciTech Connect

    Rauf, Shahid; Lim, Sangwoo; Ventzek, Peter L.G.

    2005-07-15

    As nitration of SiO{sub 2} gate dielectric can increase the film's dielectric constant and reduce boron penetration into the Si channel during ion implantation, plasma nitridation is of considerable interest for the fabrication of semiconductor devices. A coupled plasma equipment-surface physics model is used in conjunction with an experimental analysis of nitrided SiO{sub 2} thin films to understand the mechanism of SiO{sub 2} plasma nitridation. This investigation is conducted in a pulsed inductively coupled N{sub 2} plasma. Computational results show that N atoms and N{sub 2}{sup +} ions are the primary species in the N{sub 2} plasma that contribute to the nitridation of SiO{sub 2} thin film. N atoms adsorb at the SiO{sub 2} surface and diffuse into the bulk film, and most nitrogen near the surface is due to these adsorbed N atoms. N{sub 2}{sup +} ions, on the other hand, penetrate deeper into the SiO{sub 2} film in an ion-implantation-like manner, and these ions are responsible for the observed tail in the nitrogen concentration profile. Nitrogen concentration in the film can be increased by enhancing the plasma source power or the nitridation time. However, once the dielectric surface starts saturating with nitrogen, further nitrogen adsorption is inhibited and nitridation rate tapers off. As the fluxes of atomic N and N{sub 2}{sup +} ions to the wafer decrease with increasing gas pressure, the nitridation rate decreases with gas pressure. For the range of SiO{sub 2} film thickness examined (13-15 A ), the nitrogen transport and reaction properties in the film are film thickness dependent, probably due to the nonuniform density of the initial SiO{sub 2} thin film or to interfacial stresses.

  5. DC Electric Fields, Associated Plasma Drifts, and Irregularities Observed on the C/NOFS Satellite

    NASA Technical Reports Server (NTRS)

    Pfaff, R.; Freudenreich, H.; Klenzing, J.

    2011-01-01

    Results are presented from the Vector Electric Field Investigation (VEFI) on the Air Force Communication/Navigation Outage Forecasting System (C/NOFS) satellite, a mission designed to understand, model, and forecast the presence of equatorial ionospheric irregularities. The VEFI instrument includes a vector DC electric field detector, a fixed-bias Langmuir probe operating in the ion saturation regime, a flux gate magnetometer, an optical lightning detector, and associated electronics including a burst memory. Compared to data obtained during more active solar conditions, the ambient DC electric fields and their associated E x B drifts are variable and somewhat weak, typically < 1 mV/m. Although average drift directions show similarities to those previously reported, eastward/outward during day and westward/downward at night, this pattern varies significantly with longitude and is not always present. Daytime vertical drifts near the magnetic equator are largest after sunrise, with smaller average velocities after noon. Little or no pre-reversal enhancement in the vertical drift near sunset is observed, attributable to the solar minimum conditions creating a much reduced neutral dynamo at the satellite altitude. The nighttime ionosphere is characterized by larger amplitude, structured electric fields, even where the plasma density appears nearly quiescent. Data from successive orbits reveal that the vertical drifts and plasma density are both clearly organized with longitude. The spread-F density depletions and corresponding electric fields that have been detected thus far have displayed a preponderance to appear between midnight and dawn. Associated with the narrow plasma depletions that are detected are broad spectra of electric field and plasma density irregularities for which a full vector set of measurements is available for detailed study. The VEFI data represents a new set of measurements that are germane to numerous fundamental aspects of the electrodynamics

  6. Arc-Cathode Coupling in the Modeling of a Conventional DC Plasma Spray Torch

    NASA Astrophysics Data System (ADS)

    Alaya, M.; Chazelas, C.; Mariaux, G.; Vardelle, A.

    2015-01-01

    The plasma torch is the basis of the plasma spray process and understanding of the electric arc dynamics within the plasma torch is necessary for better control of torch and process instabilities. Numerical simulation is a useful tool for investigating the effect of the torch geometry and operating parameters on the electric arc characteristics provided that the model of arc dynamics is reliable and the boundary conditions of the computational domain are well founded. However, such a model should also address the intricate transient and 3D interactions between the electrically conducting fluid and electromagnetic, thermal, and acoustics phenomena. Especially, the description of the electrode regions where the electric arc connects with solid material is an important part of a realistic model of the plasma torch operation as the properties of electric arcs at atmospheric pressure depend not only on the arc plasma medium, but also on the electrodes. This paper describes the 3D and time-dependent numerical simulation of a plasma arc and is focused on the cathode boundary conditions. This model was used to investigate the differences in arc characteristics when the cathode is included into the numerical domain and coupled with the arc. The magnetic and thermal coupling between the cathode and arc made it possible to get rid of the current density boundary condition at the cathode tip that is delicate to predetermine. It also allowed a better prediction of the cathode flow jet generated by the pumping action induced by the interaction of the self-magnetic field with the electric current and so it allowed a better description of the dynamics of arc. It should be a necessary step in the development of a fully predictive model of DC plasma torch operation.

  7. Structured DC Electric Fields With and Without Associated Plasma Density Gradients Observed with the C/NOFS Satellite

    NASA Technical Reports Server (NTRS)

    Pfaff, R.; Rowland, D.; Klenzing, J.; Freudenreich, H.; Bromund, K.; Liebrecht, C.; Roddy, P.; Hunton, D.

    2009-01-01

    DC electric field observations and associated plasma drifts gathered with the Vector Electric Field Investigation on the Air Force Communication/Navigation Outage Forecasting System (C/NOFS) satellite typically reveal considerable variation at large scales (approximately 100's of km), in both daytime and nighttime cases, with enhanced structures usually confined to the nightside. Although such electric field structures are typically associated with plasma density depletions and structures, as observed by the Planar Langmuir Probe on C/NOFS, what is surprising is the number of cases in which large amplitude, structured DC electric fields are observed without a significant plasma density counterpart structure, including their appearance at times when the ambient plasma density appears relatively quiescent. We investigate the relationship of such structured DC electric fields and the ambient plasma density in the C/NOFS satellite measurements observed thus far, taking into account both plasma density depletions and enhancements. We investigate the mapping of the electric fields along magnetic field lines from distant altitudes and latitudes to locations where the density structures, which presumably formed the original seat of the electric fields, are no longer discernible in the observations. In some cases, the electric field structures and spectral characteristics appear to mimic those associated with equatorial spread-F processes, providing important clues to their origins. We examine altitude, seasonal, and longitudinal effects in an effort to establish the origin of such structured DC electric fields observed both with, and without, associated plasma density gradients

  8. Production of geopolymers using glass produced from DC plasma treatment of air pollution control (APC) residues.

    PubMed

    Kourti, Ioanna; Rani, D Amutha; Deegan, D; Boccaccini, A R; Cheeseman, C R

    2010-04-15

    Air pollution control (APC) residues are the hazardous waste produced from cleaning gaseous emissions at energy-from-waste (EfW) facilities processing municipal solid waste (MSW). APC residues have been blended with glass-forming additives and treated using DC plasma technology to produce a high calcium alumino-silicate glass. This research has investigated the optimisation and properties of geopolymers prepared from this glass. Work has shown that high strength geopolymers can be formed and that the NaOH concentration of the activating solution significantly affects the properties. The broad particle size distribution of the APC residue glass used in these experiments results in a microstructure that contains unreacted glass particles included within a geopolymer binder phase. The high calcium content of APC residues may cause the formation of some amorphous calcium silicate hydrate (C-S-H) gel. A mix prepared with S/L=3.4, Si/Al=2.6 and [NaOH]=6M in the activating solution, produced high strength geopolymers with compressive strengths of approximately 130 MPa. This material had high density (2070 kg/m(3)) and low porosity. The research demonstrates for the first time that glass derived from DC plasma treatment of APC residues can be used to form high strength geopolymer-glass composites that have potential for use in a range of applications. PMID:20022170

  9. Preparation of ultrafine silicon nitride, and silicon nitride and silicon carbide mixed powders in a hybrid plasma

    SciTech Connect

    Lee, H.J.; Eguchi, K.; Yoshida, T. )

    1990-11-01

    This paper describes ultrafine Si{sub 3}N{sub 4} and Si{sub 3}N{sub 4} + SiC mixed powders synthesized through thermal plasma chemical vapor deposition (CVD) using a hybrid plasma which was characterized by the superposition of a radio-frequency plasma and an arc jet. The reactant, SiCl{sub 4}, was injected into an arc jet and completely decomposed in a hybrid plasma, and the second reactant, CG{sub 4} and/or NH{sub 3}, was injected into the tail flame through multistage ring slits. In the case of ultrafine Si{sub 3}N{sub 4} powder synthesis, reaction efficiency increased significantly by multistage injection compared to single-stage injection. The most striking result is that amorphous Si{sub 3}N{sub 4} with a nitrogen content of about 37 wt% and a particle size of 10 to 30 nm could be prepared successfully even at the theoretical NH{sub 3}/SiCl{sub 4} molar ratio of {approximately} 1.33, although the crystallinity depended on the NH{sub 3}/SiCl{sub 4} molar ratio and the injection method. For the preparation of Si{sub 3}N{sub 4} + SiC mixed powders, the N/C composition ratio and particle size could be controlled not only be regulating the flow rate of the NH{sub 3} and CH{sub 4} reactant gases and the H{sub 2} quenching gas, but also by adjusting the reaction space. The results of this study provide sufficient evidence to suggest that multistage injection is very effective for regulating the condensation process of fine particles in a plasma tail flame.

  10. Plasma parameters of pulsed-dc discharges in methane used to deposit diamondlike carbon films

    NASA Astrophysics Data System (ADS)

    Corbella, C.; Rubio-Roy, M.; Bertran, E.; Andújar, J. L.

    2009-08-01

    Here we approximate the plasma kinetics responsible for diamondlike carbon (DLC) depositions that result from pulsed-dc discharges. The DLC films were deposited at room temperature by plasma-enhanced chemical vapor deposition (PECVD) in a methane (CH4) atmosphere at 10 Pa. We compared the plasma characteristics of asymmetric bipolar pulsed-dc discharges at 100 kHz to those produced by a radio frequency (rf) source. The electrical discharges were monitored by a computer-controlled Langmuir probe operating in time-resolved mode. The acquisition system provided the intensity-voltage (I-V) characteristics with a time resolution of 1 μs. This facilitated the discussion of the variation in plasma parameters within a pulse cycle as a function of the pulse waveform and the peak voltage. The electron distribution was clearly divided into high- and low-energy Maxwellian populations of electrons (a bi-Maxwellian population) at the beginning of the negative voltage region of the pulse. We ascribe this to intense stochastic heating due to the rapid advancing of the sheath edge. The hot population had an electron temperature Tehot of over 10 eV and an initial low density nehot which decreased to zero. Cold electrons of temperature Tecold˜1 eV represented the majority of each discharge. The density of cold electrons necold showed a monotonic increase over time within the negative pulse, peaking at almost 7×1010 cm-3, corresponding to the cooling of the hot electrons. The plasma potential Vp of ˜30 V underwent a smooth increase during the pulse and fell at the end of the negative region. Different rates of CH4 conversion were calculated from the DLC deposition rate. These were explained in terms of the specific activation energy Ea and the conversion factor xdep associated with the plasma processes. The work deepens our understanding of the advantages of using pulsed power supplies for the PECVD of hard metallic and protective coatings for industrial applications (optics

  11. Towards long-lasting antibacterial stainless steel surfaces by combining double glow plasma silvering with active screen plasma nitriding.

    PubMed

    Dong, Y; Li, X; Tian, L; Bell, T; Sammons, R L; Dong, H

    2011-01-01

    Antibacterial surface modification of biomedical materials has evolved as a potentially effective method for preventing bacterial proliferation on the surfaces of devices. However, thin antibacterial coatings or modified layers can be easily worn down when interacting with other surfaces in relative motion, thus leading to a low durability of the antibacterial surface. To this end, novel biomaterial surfaces with antibacterial Ag agents and a wear-resistant S-phase have been generated on stainless steel by duplex plasma silvering-nitriding techniques for application to load-bearing medical devices. The chemical composition, microstructure, surface topography, roughness and wettability of SS surfaces were characterised using glow discharge optical emission spectroscopy, energy-dispersive spectroscopy/wavelength dispersive spectrometry (WDS), X-ray diffraction, atomic force microscopy and a contact angle goniometer. Optimal surface design for high antimicrobial activity and prolonged durability has been achieved, as evidenced by rapid bacterial killing rates (within 6h), an ultra hard matrix (875 ± 25 Hv), high load-bearing capacity (critical load 37 N) and excellent wear resistance (wear rate 4.9 × 10⁻⁶ mm³ m⁻¹). Ag embedded in the hard substrate of fcc compounds M(4)N (M=Fe, Cr, Ag, etc.) and the expanded fcc nitrogen S-phase shows deep infiltration of 6 ± 1 μm, and provides bactericidal activity against both Gram-negative Escherichia coli NCTC 10418 and Gram-positive Staphylococcus epidermidis NCTC 11047 of over 97% and 90%, respectively, within 6h. The presence of silver in the surface before and after scratching under a progressive load applied up to 60 N using a diamond stylus was confirmed by WDS. PMID:20727993

  12. Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique

    NASA Astrophysics Data System (ADS)

    Wang, L.; Reehal, H. S.; Martínez, F. L.; San Andrés, E.; del Prado, A.

    2003-07-01

    Amorphous hydrogenated silicon nitride films have been deposited by the electron cyclotron resonance plasma technique, using N2 and SiH4 as precursor gases. The gas flow ratio, deposition temperature and microwave power have been varied in order to study their effect on the properties of the films, which were characterized by Rutherford back-scattering spectrometry, elastic recoil detection analysis (ERDA), Fourier transform infrared spectroscopy and ellipsometry. All samples show N/Si ratios near or above the stoichiometric value (N/Si = 1.33). The hydrogen content determined from ERDA measurements is significantly higher than the amount detected by infrared spectroscopy, evidencing the presence of non-bonded H. As the N2/SiH4 gas flow ratio is increased (by decreasing the SiH4 partial pressure), the Si content decreases and the N-H concentration increases, while the N content remains constant, resulting in an increase of the N/Si ratio. The decrease of the Si content causes a decrease of the refractive index and the density of the film, while the growth ratio also decreases due to the limiting factor of the SiH4 partial pressure. The infrared Si-N stretching band shifts to higher wavenumbers as the N-H concentration increases. The increase of deposition temperature promotes the release of H, resulting in a higher incorporation of N and Si into the film and a decrease of the N/Si ratio. The effect of increasing the microwave power is analogous to increasing the N2/SiH4 ratio, due to the increase in the proportion of nitrogen activated species.

  13. Influence of substrate bias on practical adhesion, toughness, and roughness of reactive dc-sputtered zirconium nitride films

    NASA Astrophysics Data System (ADS)

    Chen, Cheng-Shi; Liu, Chuan-Pu; Yang, Heng-Ghieh; Tsao, C.-Y. A.

    2004-09-01

    The ZrN films were grown on Si (100) substrates using dc magnetron sputtering where the substrate bias was varied from -45 to 50 V. In this article, the film/substrate practical adhesion of the ZrN films were measured by scratch testing while the hardness, elastic modulus, and fracture toughness were measured by nanoindentation. The structures and morphologies of the ZrN films were analyzed using scanning electron microscopy, atomic force microscopy, and x-ray diffraction. The results indicate that the introduction of either negative or positive bias results in the degradation of the practical adhesion properties, while the films under zero bias exhibit the best adhesion. In addition, positive bias results in the increase in both the hardness and elastic modulus, while negative bias enhances the hardness and toughness of the ZrN thin films. The mechanical properties are greatly influenced by substrate bias and can be correlated to microstructure variations. The detailed mechanisms accounted for these phenomena are discussed.

  14. Silicon- and aluminum-nitride films deposited by reactive low-voltage ion plating and reactive dc-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Vogl, G. W.; Monz, K. H.; Nguyen, Quang D.; Huter, Michael; Rille, Eduard P.; Pulker, Hans K.

    1994-11-01

    In this work the properties of Si3N4 and AIN thin films deposited onto unheated substrates by Reactive Low Voltage Ion Plating (RLVIP) and Reactive DC-Magnetron Sputtering (RDCMS) were investigated. In both experimental setups pure silicon and aluminum were used as starting materials. Working and reactive gas were argon and nitrogen respectively. All Si3N4 films showed amorphous structure in X-ray and electron diffraction whereas AIN films were found to be polycrystalline and could be indexed to the bulk hexagonal AIN lattice. The values of the film refractive index at 550 nm are 2.08 for RLVIP Si3N4, 2.12 for RLVIP AIN, 2.02 for RDCMS Si3N4, and 1.98 or 2.12 for AIN depending on the total pressure in the range of 8 E - 1 Pa and 1 E - 1 Pa during the process. The high optical transmission region for the Si3N4 films lies between 0.23 and 9.5 micrometers , and for AIN films between 0.2 and 12.5 micrometers . Purity and composition were measured by electron microprobe, infrared transmission, nuclear reactions, elastic recoil detection analysis and Rutherford backscattering spectroscopy. Transmission electron micrographs of Pt-C replicas of fracture cross sections of the films show their different microstructure and surface topography. Environmental tests proved the RLVIP Si3N4 films to be very hard, of high density and of strong adherence to glass.

  15. Effect of deposition parameters on structural and mechanical properties of niobium nitride synthesized by plasma focus device

    NASA Astrophysics Data System (ADS)

    Siddiqui, Jamil; Hussain, Tousif; Ahmad, Riaz; Khalid, Nida

    2015-06-01

    Effects of deposition angle and axial distance on the structural and mechanical properties of niobium nitride synthesized by a dense plasma focus (DPF) system are studied. The x-ray diffraction (XRD) confirms that the deposition parameters affect the growth of multi-phase niobium nitride. Scanning electron microscopy (SEM) shows the granular surface morphology with strong thermally assisted coagulation effects observed at the 5-cm axial distance. The non-porous granular morphology observed at the 9-cm distance along the anode axis is different from those observed at deposition angles of 10° and 20°. Energy dispersive x-ray (EDX) spectroscopy reveals the maximum nitrogen content at the shortest (5 cm) axial position. Atomic force microscopy (AFM) exhibits that the roughness of coated films varies for coatings synthesized at different axial and angular positions, and the Vickers micro-hardness test shows that a maximum hardness value is (08.44 ± 0.01) GPa for niobium nitride synthesized at 5-cm axial distance, which is about 500% more than that of a virgin sample. Project supported by the HEC, Pakistan.

  16. Low Temperature Deposition of β-phase Silicon Nitride Using Inductively Coupled Plasma Chemical Vapor Deposition Technique

    NASA Astrophysics Data System (ADS)

    Kshirsagar, Abhijeet; Duttagupta, S. P.; Gangal, S. A.

    2010-12-01

    Silicon nitride (SiN) films have been deposited at low temperature (≤100° C), by Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD) technique. The chemical and physical properties of deposited SiN films such as refractive index, deposition rate, and film stress have been measured. Additional structural characterization is performed using X-ray diffraction (XRD) and Micro Raman Spectroscopy. It is found that the films obtained are of low stress and have β-phase. To the best of authors knowledge such low temperature, low stress, β-phase SiN films deposition using ICPCVD are being reported for the first time.

  17. Influence of a transverse magnetic field on arc root movements in a dc plasma torch: Diamagnetic effect of arc column

    SciTech Connect

    Kim, Keun Su

    2009-03-23

    The effect of a transverse magnetic field on the anodic arc root movement inside a dc plasma torch has been investigated. The arc voltage fluctuation, which represents the degree of the arc instability, was reduced to 28.6% of the original value and the high frequency components in the voltage signal also decreased in their magnitudes. The inherent arc instability in a dc thermal plasma torch seems to be suppressed by a diamagnetic effect of the arc column. Furthermore, the measured voltage wave forms indicated that the arc root attachment mode would be controllable by a transverse magnetic field.

  18. Doppler broadening of atomic-hydrogen lines in DC and capacitively coupled RF plasmas

    NASA Astrophysics Data System (ADS)

    Akhtar, Kamran; Scharer, J. E.; Mills, R. L.

    2007-10-01

    The extraordinary broadening of Balmer lines of hydrogen admixed with Ar or He as opposed to Xe in DC glow and capacitively coupled rf discharges is studied over a wide range of pressure and gas compositions. High-resolution optical emission spectroscopy is performed parallel to (end-on) and perpendicular (side-on) to the electrode axis along with Langmuir probe measurements of plasma density and electron temperature for the RF capacitive discharge case. A broad and symmetric (Gaussian) Balmer emission line corresponding to 20-60 eV hydrogen atom temperatures is observed in Ar/H2 and He/H2 plasmas. Energy is transferred selectively to hydrogen atoms whereas the atoms of admixed He and Ar gases remain cold (<0.5 eV). In the field acceleration model [e.g., Cvetanovic et. al. J. App. Phys., Vol. 97, 033302-1, 2005] there apparently is no preferred species to which energy is coupled and according to the model one should observe enhanced temperatures of hydrogen and helium atoms in He/H2 discharges where the atomic mass is more comparable (4:1). We also briefly examine the experimental results using the Resonance Transfer Model of hydrogen heating [Mills et. al IEEE Trans. Plasma Sci., 31, 338, 2003] as the source of broadening.

  19. Impact of substrate nitridation on the growth of InN on In2O3(111) by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cho, YongJin; Sadofev, Sergey; Fernández-Garrido, Sergio; Calarco, Raffaella; Riechert, Henning; Galazka, Zbigniew; Uecker, Reinhard; Brandt, Oliver

    2016-04-01

    We study the growth of InN films on In2O3(111) substrates by plasma-assisted molecular beam epitaxy under N excess. InN films deposited directly on In2O3(111) exhibit a strongly faceted morphology. A nitridation step prior to growth is found to convert the In2O3(111) surface to InN{0001}. The morphology of InN films deposited on such nitridated In2O3(111) substrates is characteristic for growth by instable step-flow and is thus drastically different from the three-dimensional growth obtained without nitridation. We show that this change originates from the different polarity of the films: while InN films deposited directly on In2O3(111) are In-polar, they are N-polar when grown on the nitridated substrate.

  20. Design and installation of DC plasma reactor for SiC nanoparticle production

    NASA Astrophysics Data System (ADS)

    Yu, I. K.; Rhee, J. H.; Cho, S.; Yoon, H. K.

    2009-04-01

    In order to get the high quality SiC nanopowders, a DC plasma reactor system with adjustable torch has been developed. SiC nanopowders were synthesized using this system and the synthesized primary particles have nearly spherical structures, mostly β-SiC phase with a particle size of 10-30 nm. Larger aggregate particles have been produced in our system probably due to longer particle growth times and faster collisions. The synthesized particles collected from the reactor wall and cyclone bottom have some free silicon and free carbon. To produce high quality silicon carbide nanopowders, it is highly necessary to improve the experimental conditions such as lower system pressures, shorter residence time, and higher quenching rates during powder synthesis.

  1. Observations of the long-term plasma evolution in a pulsed dc magnetron discharge

    NASA Astrophysics Data System (ADS)

    Bäcker, H.; Bradley, J. W.

    2005-08-01

    Using a time-resolved Langmuir probe the temporal evolution of the plasma parameters in a pulsed dc magnetron discharge was determined for a number of positions both inside and outside the magnetic trap. The discharge was operated at a pulse frequency of 2 kHz with a 50% duty cycle, a titanium target and at a fixed argon pressure of 0.53 Pa. The electron density, ne, electron temperature, Te, plasma potential, Vp and floating potential, Vf have typically two-fold characteristic decay and rise times, which increase with distance from the target. In the magnetic trap, the initial ne decay rate is ~18 µs, lengthening to 120 µs. However, in the plasma bulk, this figure is about 250 µs at all times during the plasma decay. The ne decay rate on the discharge centreline is somewhat slower at about 600 µs. During the transition from duty on to off phases a 'density-wave', initiated at the cathode, is observed to propagate downstream at about 1000 m s-1 (a velocity close to the calculated ion acoustic speed). The results reveal a complex picture in terms of the electron energies. In the off time, the electrons are characterized by a single Maxwellian distribution function and the initial Te decay times are between 6 and 10 µs. However, these lengthen dramatically to values between 600 and 800 µs depending on position to give a final Te value of about 0.2-0.3 eV. In the on time, and outside the magnetic trap, bi-Maxwellian electrons are observed with Teh = 4-6 eV and Tec = 1-2 eV. A simple model, taking into account the effect of the magnetic field on electron collection at the probe, has been used to show that the relative density of hot electrons is as high as 40%. On magnetic field lines that connect with the walls, bi-Maxwellian electrons exist during the whole on period; however, on the centreline their temperatures converge after about 100 µs to form a single distribution with Te ~ 3 eV. Plasma potential measurements show that the strong axial electric fields in

  2. Study of jet fluctuations in DC plasma torch using high speed camera

    NASA Astrophysics Data System (ADS)

    Tiwari, Nirupama; Sahasrabudhe, S. N.; Joshi, N. K.; Das, A. K.

    2010-02-01

    The power supplies used for the plasma torches are usually SCR controlled and have a large ripple factor. This is due to the fact that the currents in the torch are of the order of hundreds of amperes which prohibit effective filtering of the ripple. The voltage and current vary as per the ripple in the power supply and causes plasma jet to fluctuate. To record these fluctuations, the jet coming out from a D.C. plasma torch operating at atmospheric pressure was imaged using high speed camera at the rate of 3000 frame per second. Light emitted from a well defined zone in the plume was collected using an optical fibre and a Photo Multiplier Tube. Current, voltage and PMT signals were recorded simultaneously using a digital storage oscilloscope (DSO). The fast camera recorded the images for 25 ms and the starting pulse from the camera was used to trigger the DSO for recording voltage, current and optical signals. Each image of the plume recorded by the fast camera was correlated with the magnitude of the instantaneous voltage, current and optical signal. It was observed that the luminosity and length of the plume varies as per the product of instantaneous voltage and current i.e. electrical power fed to plasma torch. The experimental runs were taken with different gas flow rates and electrical powers. The images were analyzed using image processing software and constant intensity contours of images were determined. Further analysis of the images can provide a great deal of information about dynamics of the jet.

  3. Tribological evaluation of diamond coating on pure titanium in comparison with plasma nitrided titanium and uncoated titanium

    SciTech Connect

    Yan, B.; Loh, N.L.; Fu, Y.; Sun, C.Q.; Hing, P.

    1999-12-01

    Titanium alloys are characterized by poor tribological properties, and the traditional use of titanium alloys has been restricted to nontribological applications. The deposition of a well adherent diamond coating is a promising way to solve this problem. In this study, the tribological properties of diamond-coated titanium were studied using a pin-on-disk tribometer, and the results were compared with those of pure titanium and plasma nitrided titanium. The tribological behavior of pure titanium was characterized by high coefficient of friction and rapid wear of materials. Plasma nitriding improved the wear resistance only under low normal load; however, this hardened layer was not efficient in improving the wear resistance and the friction properties under high normal load. Diamond coating on pure titanium improved the wear resistance of titanium significantly. Surface profilometry measurement indicated that little or no wear of the diamond coating occurred under the test conditions loads. The roughness of the diamond coating was critical because it controlled the amount of abrasive damage on the counterface. Reducing the surface roughness by polishing led to the reductions in both the friction and wear of the counterface.

  4. Synthesis of aluminum nitride powders from a plasma-assisted ball milled precursor through carbothermal reaction

    SciTech Connect

    Liu, Zhi-jie; Dai, Le-yang; Yang, De-zheng; Wang, Sen; Zhang, Bao-jian; Wang, Wen-chun; Cheng, Tie-han

    2015-01-15

    Highlights: • A novel and high efficiency synthesizing AlN powders method combining mechanical ball milling and DBDP has been developed. • The particle size, the crystallite size, the lattice distortion, the morphology of Al{sub 2}O{sub 3} powders, and the AlN conversion rate are investigated and compared under the ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP. • The ball milled Al{sub 2}O{sub 3} powders with DBDP have small spherical structure morphology with very fine particles size and high specific surface area, which result in a higher chemical efficiency and a higher AlN conversion rate at lower thermal temperature. - Abstract: In this paper, aluminum nitride (AlN) powers have been produced with a novel and high efficiency method by thermal annealing at 1100–1600 °C of alumina (Al{sub 2}O{sub 3}) powders which were previously ball milled for various time up to 40 h with and without the assistant of dielectric barrier discharge plasma (DBDP). The ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP and the corresponding synthesized AlN powers are characterized by X-ray diffraction, scanning electron microscope, and transmission electron microscopy. From the characteristics of the ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP, it can be seen that the ball milled Al{sub 2}O{sub 3} powders with DBDP have small spherical structure morphology with very fine particles size and high specific surface area, which result in a higher chemical efficiency and a higher AlN conversion rate at lower thermal temperature. Meanwhile, the synthesized AlN powders can be known as hexagonal AlN with fine crystal morphology and irregular lump-like structure, and have uniform distribution with the average particle size of about between 500 nm and 1000 nm. This provides an important method for fabricating ultra fine powders and synthesizing nitrogen compounds.

  5. Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation

    NASA Astrophysics Data System (ADS)

    Kusumandari; Takeuchi, Wakana; Kato, Kimihiko; Shibayama, Shigehisa; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2012-01-01

    We have investigated the effects of light radiation during plasma nitridation on the electrical properties of an Al2O3/Ge gate stack structure using the pallet for plasma evaluation (PAPE) technique. From the capacitance-voltage characteristics, the flatband voltage shift due to fixed oxide charges significantly increases after light exposure with an energy higher than 7.5 eV. In addition, the density of trapped charges near the interface and the interface state density (Dit) also significantly increase after light exposure with an energy over 11.3 eV. The net density of positive fixed oxide charges, the density of trapped charges near the interface, and Dit can be reduced by post-metallization annealing (PMA) in N2 ambient at 300 °C.

  6. Excitation wavelength dependence of water-window line emissions from boron-nitride laser-produced plasmas

    SciTech Connect

    Crank, M.; Harilal, S. S.; Hassan, S. M.; Hassanein, A.

    2012-02-01

    We investigated the effects of laser excitation wavelength on water-window emission lines of laser-produced boron-nitride plasmas. Plasmas are produced by focusing 1064 nm and harmonically generated 532 and 266 nm radiation from a Nd:YAG laser on BN target in vacuum. Soft x-ray emission lines in the water-window region are recorded using a grazing-incidence spectrograph. Filtered photodiodes are used to obtain complementary data for water-window emission intensity and angular dependence. Spectral emission intensity changes in nitrogen Ly-{alpha} and He-{alpha} are used to show how laser wavelength affects emission. Our results show that the relative intensity of spectral lines is laser wavelength dependent, with the ratio of Ly-{alpha} to He-{alpha} emission intensity decreasing as laser wavelength is shortened. Filtered photodiode measurements of angular dependence showed that 266 and 532 nm laser wavelengths produce uniform emission.

  7. ANALYSIS OF A WASTEWATER FOR SEVEN PRIORITY POLLUTANT ELEMENTS BY D.C. ARGON PLASMA EMISSION SPECTROSCOPY

    EPA Science Inventory

    This limited project was conducted to determine the usefulness of the D.C. argon plasma for the analysis of wastewater. Seven priority pollutant elements, arsenic (As), beryllium (Be), cadmium (Cd), chromium (Cr), nickel (Ni), lead (Pb), and thallium (Tl), were selected for use i...

  8. Effect of plasma parameters on characteristics of silicon nitride film deposited by single and dual frequency plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Sahu, B. B.; Yin, Yongyi; Han, Jeon G.

    2016-03-01

    This work investigates the deposition of hydrogenated amorphous silicon nitride films using various low-temperature plasmas. Utilizing radio-frequency (RF, 13.56 MHz) and ultra-high frequency (UHF, 320 MHz) powers, different plasma enhanced chemical vapor deposition processes are conducted in the mixture of reactive N2/NH3/SiH4 gases. The processes are extensively characterized using different plasma diagnostic tools to study their plasma and radical generation capabilities. A typical transition of the electron energy distribution function from single- to bi-Maxwellian type is achieved by combining RF and ultra-high powers. Data analysis revealed that the RF/UHF dual frequency power enhances the plasma surface heating and produces hot electron population with relatively low electron temperature and high plasma density. Using various film analysis methods, we have investigated the role of plasma parameters on the compositional, structural, and optical properties of the deposited films to optimize the process conditions. The presented results show that the dual frequency power is effective for enhancing dissociation and ionization of neutrals, which in turn helps in enabling high deposition rate and improving film properties.

  9. Effect of a floating circular aperture on a dc glow discharge dusty plasma

    NASA Astrophysics Data System (ADS)

    Heinrich, Jonathon R.; Kim, Su-Hyun; Merlino, Robert L.

    2009-11-01

    We have investigated novel effects observed when a floating aperture, either 6 mm or 8 mm in diameter, is placed 1-2 cm in front of an anode disk (4 cm diameter) that is used to form a dc glow discharge dusty plasma. Dust is incorporated into the anode glow plasma from a tray located below the anode which contained kaolin powder. The glow discharge traps particles with an average size of 1 micron. When the aperture is placed in front of the disk, well-defined pear-shaped or spherical dust clouds are formed, depending on the diameter of the aperture and its distance from the anode. The dust interacts with the aperture through the potential structure associated with the floating (negative) plate in which the aperture is located. The dust cloud is imaged using a CCD camera and a thin sheet of 532 nm laser light. Some of the effects observed include: outwardly expanding spherical dust acoustic waves and shocks, dust rotation around a void formed at the aperture, and a dust/discharge instability in which the discharge is periodically quenched and reignited while the dust cloud expands and contracts, with the dust retaining a residual charge.

  10. Growth of ultrananocrystalline diamond film by DC Arcjet plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chen, G. C.; Li, B.; Yan, Z. Q.; Liu, J.; Lu, F. X.; Ye, H.

    2012-06-01

    Self-standing diamond films were grown by DC Arcjet plasma enhanced chemical vapor deposition (CVD). The feed gasses were Ar/H2/CH4, in which the flow ratio of CH4 to H2 (F/F) was varied from 5% to 20%. Two distinct morphologies were observed by scanning electron microscope (SEM), i.e. the "pineapple-like" morphology and the "cauliflower-like" morphology. It was found that the morphologies of the as-grown films are strongly dependent on the flow ratio of CH4 to H2 in the feed gasses. High resolution transmission electron microscope (HRTEM) survey results revealed that there were nanocrystalline grains within the "pineapple-like" films whilst there were ultrananocrystalline grains within "cauliflower-like" films. X-ray diffraction (XRD) results suggested that (110) crystalline plane was the dominant surface in the "cauliflower-like" films whilst (100) crystalline plane was the dominant surface in the "pineapple-like" films. Raman spectroscopy revealed that nanostructured carbon features could be observed in both types of films. Plasma diagnosis was carried out in order to understand the morphology dependent growth mechanism. It could be concluded that the film morphology was strongly influenced by the density of gas phases. The gradient of C2 radical was found to be different along the growth direction under the different growth conditions.

  11. Electrical characterization of rapid thermal nitrided and reoxidized plasma-enhanced chemical-vapor-deposited silicon dioxide metal-oxide-silicon structures

    NASA Astrophysics Data System (ADS)

    Ang, S. S.; Shi, Y. J.; Brown, W. D.

    1994-12-01

    The electrical characteristics of rapid thermal nitrided and reoxidized plasma-enhanced chemical-vapor-deposited (PECVD) silicon dioxide metal-oxide-silison (MOS) structures were investigated. Both nitridation temperature and time affect the properties of the MOS structures as revealed by capacitance-voltage (C-V) characteristics. Nitridation at 1000 C for 60 s followed by reoxidtion for 60 s at 1000 C in an oxygen/ nitrogen ambient was found to be superior to the same nitridation followed by reoxidation in pure oxygen. Typical vlaues of fixed charge and interface state densities for devices subjected to nitridation and reoxidation in a mixture of oxygen and nitrogen were 4 x 10(exp 10) cm(exp -2) and 7 x 10(exp 10) eV(exp -1) cm(exp -2), respectively. Avalanche electron injection using electric field of 3-5 MV/cm produced negative shifts in flatband voltage for low fluence levels and positive flatband voltage shifts for larger fluence levels. Furthermore, the magnitudes of both positive and negative shifts and the electron fluence level at which turnaround occurs increase with electric field. However, independent of the electric field, the flatband voltage saturates very close to its preinjection vlaue. These results strongly suggest that device quality MOS dielectrics can be realized by nitridation/reoxidation of PECVD oxide.

  12. Kinetic studies of NO formation in pulsed air-like low-pressure dc plasmas

    NASA Astrophysics Data System (ADS)

    Hübner, M.; Gortschakow, S.; Guaitella, O.; Marinov, D.; Rousseau, A.; Röpcke, J.; Loffhagen, D.

    2016-06-01

    The kinetics of the formation of NO in pulsed air-like dc plasmas at a pressure of 1.33 mbar and mean currents between 50 and 150 mA of discharge pulses with 5 ms duration has been investigated both experimentally and by self-consistent numerical modelling. Using time-resolved quantum cascade laser absorption spectroscopy, the densities of NO, NO2 and N2O have been measured in synthetic air as well as in air with 0.8% of NO2 and N2O, respectively. The temporal evolution of the NO density shows four distinct phases during the plasma pulse and the early afterglow in the three gas mixtures that were used. In particular, a steep density increase during the ignition phase and after termination of the discharge current pulse has been detected. The NO concentration has been found to reach a constant value of 0.57× {{10}14}~\\text{molecules}~\\text{c}{{\\text{m}}-3} , 1.05× {{10}14}~\\text{molecules}~\\text{c}{{\\text{m}}-3} , and 1.3× {{10}14}~\\text{molecules}~\\text{c}{{\\text{m}}-3} for mean plasma currents of 50 mA, 100 mA and 150 mA, respectively, in the afterglow. The measured densities of NO2 and N2O in the respective mixture decrease exponentially during the plasma pulse and remain almost constant in the afterglow, especially where the admixture of NO2 has a remarkable impact on the NO production during the ignition. The numerical results of the coupled solution of a set of rate equations for the various heavy particles and the time-dependent Boltzmann equation of the electrons agree quite well with the experimental findings for the different air-like plasmas. The main reaction processes have been analysed on the basis of the model calculations and the remaining differences between the experiment and modelling especially during the afterglow are discussed.

  13. Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy

    NASA Technical Reports Server (NTRS)

    Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    A simple analysis is provided to determine the characteristics of an electron cyclotron resonance (ECR) plasma source for the generation of active nitrogen species in the molecular beam epitaxy of III-V nitrides. The effects of reactor geometry, pressure, power, and flow rate on the dissociation efficiency and ion flux are presented. Pulsing the input power is proposed to reduce the ion flux.

  14. Effect of N{sub 2} + H{sub 2} gas mixtures in plasma nitriding on tribological properties of duplex surface treated steels

    SciTech Connect

    Taktak, Sukru Gunes, Ibrahim; Ulker, Sukru; Yalcin, Yilmaz

    2008-12-15

    Thermo-reactive diffusion chromizing followed by pulsed plasma nitriding were carried out on AISI 52100 and 8620 bearing steels. The chromized samples were pulse-plasma nitrided for 5 h at 500 deg. C in various N{sub 2}-H{sub 2} gas mixtures. The coated steels were characterized using scanning electron microscopy, X-ray diffraction and microhardness testing. The unlubricated wear behaviors of only chromized and duplex treated steels were investigated in ball-on-disc system tests at room temperature. X-ray diffraction patterns of the duplex treated samples containing H{sub 2} indicated the formation of dominant CrN and Cr{sub 2}N nitrides as well as the formation of Cr{sub 3}C{sub 2} and Cr{sub 7}C{sub 3} carbides. Gas mixtures in the plasma nitriding, which was performed after chromizing, have a significant influence on the wear rate of the duplex treated steels. The wear and friction tests showed that the lowest friction coefficient and wear rates were observed for the samples duplex treated in a 50%N{sub 2} +50%H{sub 2} plasma. Conversely, the lowest wear resistance was observed on the samples duplex treated in a gas mixture of 75%N{sub 2} + 25%H{sub 2}, probably due to formation of a hard and brittle layer.

  15. The Structure-Phase Compositions of Powder Ni - based Coatings after Modification by DC Plasma Jet Irradiation

    NASA Astrophysics Data System (ADS)

    Alontseva, D.; Ghassemieh, E.

    2015-10-01

    This paper presents the results of investigation of the structure-phase compositions of Ni-based coatings deposited by plasma jet on steel substrates after modification by direct current (DC) plasma jet irradiation. Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and X-ray Diffraction (XRD) are used in the current study. The phase structures and morphology of precipitation of strengthening phases from solid solution are defined. The irradiation of the coatings leads to the evolution of the structural-phase state of coatings: an increase in the volume fraction of hardening intermetallic phases, the formation of sufficiently homogeneous fine-grained structure in the irradiated coatings. There is a mutual penetration of the substrate main element Fe into the coating and base coating elements Ni into the substrate as a result of the coating treatment by a pulse DC plasma jet.

  16. Terahertz radiation generation by beating of two super Gaussian lasers in plasma having static dc electric field

    NASA Astrophysics Data System (ADS)

    Hussain, Saba; Singh, Ram Kishor; Sharma, R. P.

    2016-07-01

    This paper presents a scheme for the generation of high power terahertz radiation by the beating of two femtosecond super Gaussian lasers in plasma having dc electric field in the transverse direction. In this mechanism, a strong nonlinear ponderomotive force acts on the plasma electrons at the frequency difference of the two lasers ( ω 1 - ω 2 ) that imparts a nonlinear oscillatory velocity to plasma electrons which further result in the generation of a nonlinear current at this difference frequency (lying in THz domain). The dynamical equations governing the generation of THz waves have been solved semi-analytically; the result shows that the amplitude of the generated waves is considerably enhanced in the presence of dc electric field, and the index of super Gaussian beams also plays a keen role in governing the yield of THz waves.

  17. Study of DC discharge plasma polymerization kinetics, film properties and applications and initial study of silica powder surface modification by RF plasma polymerization

    NASA Astrophysics Data System (ADS)

    Guo, Sheyu

    1998-09-01

    In this work, two kinds of plasma polymerization for surface modification are discussed. In part-I, DC plasma polymerization is investigated for film properties, film growth mechanism and film application. The monomers heaxamethyldisiloxane (HMDSO) and pyrrole were selected to study the deposition rates change with discharge parameters such as pressure, flow rate, power, discharge current density. Structures and properties of film deposited at extreme conditions (high power/low pressure or low power/high pressure) were studied with FT-IR, SEM, TOF-SIMS, AIM, surface energy measurement and tribology test. This work also investigated DC plasma polymerization kinetics by combining plasma parameters with film deposited rate at different conditions. Both single and double Langmuir probes were used to measure the plasma parameters in pulsed power and continuous discharges. Plasma density and electron temperature are reported. A DC plasma polymerization kinetic model is Proposed based on the experimental data and a best-fit mathematical method. DC plasma polymerization application was the other object of this study. Cold-rolled steel and copper were coated with pyrrole and HMDSO, respectively. Corrosion rate were obtained from electrochemical polarization methods, and tests in humidity chamber directly. Various monomers were used to change the substrate surface energy. Hydrophilic and hydrophobic surface were achieved respectively by different monomers. A water-soluble film was obtained with acrylic acid in mild plasma conditions. In part-II, a initial study of powder surface modification has been done. The aim of this work was to investigate the possibility of changing powder surface properties with plasma-polymerized coatings. RF inductive plasma was used as a source to excite plasma polymerization for powder treatment. Plasma-polymerized pyrrole films were deposited on silica surface. Several techniques such as SEM, EDX, TOF-SIMS, FT-IF, DSC&TGA, and surface energy

  18. Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

    SciTech Connect

    Glavin, Nicholas R. E-mail: andrey.voevodin@us.af.mil; Muratore, Christopher; Jespersen, Michael L.; Hu, Jianjun; Fisher, Timothy S.; Voevodin, Andrey A. E-mail: andrey.voevodin@us.af.mil

    2015-04-28

    Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B{sup +}, B*, N{sup +}, N*, and molecular species including N{sub 2}*, N{sub 2}{sup +}, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N{sup +} ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N{sup +} ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good

  19. Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

    NASA Astrophysics Data System (ADS)

    Glavin, Nicholas R.; Muratore, Christopher; Jespersen, Michael L.; Hu, Jianjun; Fisher, Timothy S.; Voevodin, Andrey A.

    2015-04-01

    Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B+, B*, N+, N*, and molecular species including N2*, N2+, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N+ ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N+ ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good thicknesses uniformity over macroscopic areas.

  20. Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

    SciTech Connect

    Wan, Yimao; Thomson, Andrew F.; Cuevas, Andres; McIntosh, Keith R.

    2015-01-26

    Recombination at silicon nitride (SiN{sub x}) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH{sub 3}) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH{sub 3} plasma exposure causes (i) an increase in the density of Si≡N{sub 3} groups in both SiN{sub x} and a-Si films, (ii) a reduction in refractive index and permittivity, (iii) an increase in the density of defects at the SiN{sub x}/c-Si interface, and (iv) a reduction in the density of positive charge in SiN{sub x}. The changes in recombination and thin film properties are likely due to an insertion of N–H radicals into the bulk of SiN{sub x} or a-Si. It is therefore important for device performance to minimize NH{sub 3} plasma exposure of SiN{sub x} or a-Si passivating films during subsequent fabrication steps.

  1. Magnetic properties of single crystalline expanded austenite obtained by plasma nitriding of austenitic stainless steel single crystals.

    PubMed

    Menéndez, Enric; Templier, Claude; Garcia-Ramirez, Pablo; Santiso, José; Vantomme, André; Temst, Kristiaan; Nogués, Josep

    2013-10-23

    Ferromagnetic single crystalline [100], [110], and [111]-oriented expanded austenite is obtained by plasma nitriding of paramagnetic 316L austenitic stainless steel single crystals at either 300 or 400 °C. After nitriding at 400 °C, the [100] direction appears to constitute the magnetic easy axis due to the interplay between a large lattice expansion and the expected decomposition of the expanded austenite, which results in Fe- and Ni-enriched areas. However, a complex combination of uniaxial (i.e., twofold) and biaxial (i.e., fourfold) in-plane magnetic anisotropies is encountered. It is suggested that the former is related to residual stress-induced effects while the latter is associated to the in-plane projections of the cubic lattice symmetry. Increasing the processing temperature strengthens the biaxial in-plane anisotropy in detriment of the uniaxial contribution, in agreement with a more homogeneous structure of expanded austenite with lower residual stresses. In contrast to polycrystalline expanded austenite, single crystalline expanded austenite exhibits its magnetic easy axes along basic directions. PMID:24028676

  2. Effect of active screen plasma nitriding pretreatment on wear behavior of TiN coating deposited by PACVD technique

    NASA Astrophysics Data System (ADS)

    Raoufi, M.; Mirdamadi, Sh.; Mahboubi, F.; Ahangarani, Sh.; Mahdipoor, M. S.; Elmkhah, H.

    2012-08-01

    Titanium based alloys are used extensively for improving wear properties of different parts due to their high hardness contents. Titanium nitride (TiN) is among these coatings which can be deposited on surface using various techniques such as CVD, PVD and PACVD. Their weak interface with substrate is one major drawback which can increase the total wear in spite of favorite wear behavior of TiN. Disc shaped samples from AISI H13 (DIN 1.2344) steel were prepared in this study. Single TiN coating was deposited on some of them while others have experienced a TiN deposition by active screen plasma nitriding (ASPN). Hardness at the surface and depth of samples was measured through Vickers micro hardness test which revealed 1810 Hv hardness as the maximum values for a dual-layered ASPN-TiN. Pin-on-disc wear test was done in order to study the wear mechanism. In this regard, the wear behavior of samples was investigated against pins from 100Cr6 (Din 1.3505) bearing steel and tungsten carbide-cobalt (WC-Co) steel. It was evidenced that the dual-layer ASPN-TiN coating has shown the least weight loss with the best wearing behavior because of its high hardness values, stable interface and acceptable resistance against peeling during wearing period.

  3. Plasma-deposited germanium nitride gate insulators for indium phosphide metal-insulator-semiconductor field-effect transistors

    NASA Technical Reports Server (NTRS)

    Johnson, Gregory A.; Kapoor, Vik J.

    1991-01-01

    Plasma-deposited germanium nitride was investigated for the first time as a possible gate insulator for InP compound semiconductor metal-insulator-semiconductor FET (MISFET) technology. The germanium nitride films were successfully deposited in a capacitively coupled parallel plate reactor at 13.56 MHz operation using GeH4/N2/NH3 and GeH4/N2 mixtures as reactant gases. The former process produced better quality films with enhanced uniformity, increased deposition rates, and increased resistivity. The breakdown field strength of the films was greater than 10 to the 6th V/cm. Auger electron spectroscopy did not indicate significant chemical composition differences between the two processes. For MISFETs with 2-micron channel lengths fabricated on InP, the device transconductance and threshold voltage for the GeH4/N2/NH3 process were 17 mS/mm and -3.6 V, respectively. The drain-source breakdown voltages were greater than 10 V.

  4. Tribological behaviors of diamond-like carbon coatings on plasma nitrided steel using three BN-containing lubricants

    NASA Astrophysics Data System (ADS)

    Jia, Zheng-feng; Wang, Peng; Xia, Yan-qiu; Zhang, Hao-bo; Pang, Xian-juan; Li, Bin

    2009-04-01

    In this work, diamond-like carbon (DLC) coatings were deposited on plasma nitrided AISI 1045 steel by magnetron sputtering. Three BN-containing additives and molybdenum dithiocarbamate (MoDTC) were added to poly-alpha-olefin (PAO) as additives. The additive content (mass fraction) in PAO was fixed at 0.5 wt%. The friction and wear characters of DLC coatings on nitrided steel discs sliding against AISI 52100 steel balls were tested under the lubricated conditions. It was found that borate esters have a higher load carrying capacity and much better anti-wear and friction-reducing ability than that of MoDTC. X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) were employed to explore the properties of the worn surface and the mechanism of friction and wear. According to the XPS analysis, the adsorbed organic N-containing compounds and BN are, possibly, the primary reason for the novel borate esters to possess a relatively constant coefficient of friction and lower wear rate. On the other hand, possibly, the MoDTC molecules break down during sliding and produce many Mo-oxides, and then the Mo-oxides destroy the DLC coating because of its sharp edge crystalline solid structure. After destroying the DLC coating, the MoDTC react with metals and form MoS 2 tribofilm, and decrease coefficient of friction of rubbing pairs.

  5. CH2Cl2 thin film formation on low-pressure DC plasma discharge

    NASA Astrophysics Data System (ADS)

    Martinez, H.; Flores, O.; Campillo, B.; Gomez, A.; Salazar-Flores, L.; Poveda, J. C.

    2012-08-01

    Low-pressure DC plasma discharges sustained in a glow discharge of CH2Cl2 are studied. The plasma conditions were: 1.0 Torr, 20 W and 12 l/min. The electron temperature and ion density were estimated to be 5.47±0.27 eV and (1.57±0.06)×1016 m-3, using a double Langmuir probe. The diagnostic of the species was made by optical emission spectroscopy using a spectrometer. The main species identified were at 339.61, 358.60 and 377.96 nm for C2(c'1Πg-b1Πu); at 392.50 nm for C3('Πu-' ? ); at 431.42 nm for CH(A2Δ-X2Π); at 778.28 nm for Cl; at 657.80 nm for C+; at 471.90 and 487.30 nm for H2; at 380.61 nm for CH+(A'Π-X'Σ) and at 317.73 nm for HCl+(A2Σ-X2Π). Special attention was given to the behavior of material deposited on the electrode and the time discharge dependence was also investigated. The material deposited was analyzed with the aid of a scanning electron microscope (SEM) and Fourier transform infrared spectroscopy. The SEM observation shows an increment in the particle size which is in agreement with the observation of less bands in the infrared spectra.

  6. Non-uniform plasma distribution in dc magnetron sputtering: origin, shape and structuring of spokes

    NASA Astrophysics Data System (ADS)

    Panjan, Matjaž; Loquai, Simon; Ewa Klemberg-Sapieha, Jolanta; Martinu, Ludvik

    2015-12-01

    Non-homogeneous plasma distribution in the form of organized patterns called spokes was first observed in high power impulse magnetron sputtering (HiPIMS). In the present work we investigate the spoke phenomenon in non-pulsed low-current dc magnetron sputtering (DCMS). Using a high-speed camera the spokes were systematically studied with respect to discharge current, pressure, target material and magnetic field strength. Increase in the discharge current and/or gas pressure resulted in the sequential formation of two, then three and more spokes. The observed patterns were reproducible for the same discharge conditions. Spokes at low currents and pressures formed an elongated arrowhead-like shape and were commonly arranged in symmetrical patterns. Similar spoke patterns were observed for different target materials. When using a magnetron with a weaker magnetic field, spokes had an indistinct and diffuse shape, whereas in stronger magnetic fields spokes exhibited an arrowhead-like shape. The properties of spokes are discussed in relation to the azimuthally dependent electron-argon interactions. It is suggested that a single spoke is formed due to local gas breakdown and subsequent electron drift in the azimuthal direction. The spoke is self-sustained by electrons drifting in complex electric and magnetic fields that cause and govern azimuthally dependent processes: ionization, sputtering, and secondary electron emission. In this view plasma evolves from a single spoke into different patterns when discharge conditions are changed either by the discharge current, pressure or magnetic field strength. The azimuthal length of the spoke is associated with the electron-Ar collision frequency which increases with pressure and results in shortening of spoke until an additional spoke forms at a particular threshold pressure. It is proposed that the formation of additional spokes at higher pressures and discharge currents is, in part, related to the increased transport of

  7. On the scaling of rf and dc self-bias voltages with pressure in electronegative capacitively coupled plasmas

    SciTech Connect

    Agarwal, Ankur; Dorf, Leonid; Rauf, Shahid; Collins, Ken

    2012-03-15

    Higher gas densities and lower diffusion losses at higher operating pressures typically lead to increased charged species densities (and hence flux) for a constant power deposition in capacitively coupled plasmas (CCP). As a result, one would expect that the bias radio-frequency (rf) voltage required to deposit a given power in a CCP reactor decreases with increasing operating pressure. These observations may not hold true in multiple frequency CCPs, commonly used for dielectric etching in microelectronics fabrication, due to nonlinear interactions between the rf sources. Wafer-based measurements of the rf and self-generated direct current (dc) bias voltages in a dual-frequency capacitively coupled electronegative plasma were made, which indicate that the rf and dc voltages vary nonmonotonically with pressure. These experimental results are presented in this paper and a computational plasma model is used to explain the experimental observations for varying 60 MHz and 13 MHz powers in the Ar/CF{sub 4}/CHF{sub 3} plasma over a pressure range of 25 to 400 mTorr. The authors found that while the ion density increases with pressure, the increase is most dominant near the electrode with the high frequency source (60 MHz). The rf and dc bias voltages are ultimately influenced by both charged species density magnitudes and spatial profiles.

  8. Self-sustained criterion with photoionization for positive dc corona plasmas between coaxial cylinders

    SciTech Connect

    Zheng, Yuesheng; Zhang, Bo He, Jinliang

    2015-06-15

    The positive dc corona plasmas between coaxial cylinders in air under the application of a self-sustained criterion with photoionization are investigated in this paper. A photon absorption function suitable for cylindrical electrode, which can characterize the total photons within the ionization region, is proposed on the basis of the classic corona onset criteria. Based on the general fluid model with the self-sustained criterion, the role of photoionization in the ionization region is clarified. It is found that the surface electric field keeps constant under a relatively low corona current, while it is slightly weakened with the increase of the corona current. Similar tendencies can be found under different conductor radii and relative air densities. The small change of the surface electric field will become more significant for the electron density distribution as well as the ionization activity under a high corona current, compared with the results under the assumption of a constant surface field. The assumption that the surface electric field remains constant should be corrected with the increase of the corona current when the energetic electrons with a distance from the conductor surface are concerned.

  9. Use of dc Ar microdischarge with nonlocal plasma for identification of metal samples

    SciTech Connect

    Kudryavtsev, A. A.; Stefanova, M. S.; Pramatarov, P. M.

    2015-04-07

    The possibility of using the collisional electron spectroscopy (CES) method for the detection of atoms from metal samples is experimentally verified. The detection and identification of metal atoms from a Pt sample in the nonlocal plasma of short (without positive column) dc Ar microdischarge at intermediate pressures (5–30 Torr) is realized in this work. Cathode sputtering is used for atomization of the metal under analysis. The identification of the analyzed metal is made from the energy spectra of groups of fast nonlocal electrons—characteristic electrons released in the Penning ionization of the Pt atoms by Ar metastable atoms and molecules. The acquisition of the electron energy spectra is performed using an additional electrode—a sensor located at the boundary of the discharge volume. The Pt characteristic Penning electrons form the maxima in the electron energy spectra at the energies of their appearance, which are 2.6 eV and 1.4 eV. From the measured energy of the maxima, identification of the metal atoms is accomplished. The characteristic Ar maxima due to pair collisions between Ar metastable atoms and molecules and super-elastic collisions are also recorded. This study demonstrates the possibility of creating a novel microplasma analyzer for atoms from metal samples.

  10. Synthesis of SiO(x) powder using DC arc plasma.

    PubMed

    Jung, Chan-Ok; Park, Dong-Wha

    2013-02-01

    SiO(x) was prepared by DC arc plasma and applied to the anode material of lithium ion batteries. A pellet of a mixture of Si and SiO2 was used as the raw material. The ratios of the silicon and silicon dioxide (SiO2) mixtures were varied by controlling the Si-SiO2 molar ratio (Si-SiO2 = 1-4). Hydrogen gas was used as the reduction atmosphere in the chamber. The prepared SiO(x) was collected on the chamber wall. The obtained SiO(x) was characterized by X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). XRD and TEM showed that the phase composition of the prepared particles was composed of amorphous SiO(x) and crystalline Si. The prepared SiO(x) showed wire and spherical morphology. XPS indicated the bonding state and 'x' value of the prepared SiO(x), which was close to one. The result of prepared SiO(x) is discussed from thermodynamic equilibrium calculations. The electrochemical behavior of the silicon monoxide anode was investigated. PMID:23646592

  11. DC non-thermal atmospheric-pressure plasma jet generated using a syringe needle electrode

    NASA Astrophysics Data System (ADS)

    Matra, Khanit

    2016-07-01

    Non-thermal plasma jet was generated by applying a dc source voltage between the syringe needle anode with flowing Argon gas and a planar or a hollow copper cathode in an atmospheric-pressure environment. The two operating discharge modes, which were self-pulsing and a continuous discharge mode, these were mainly controlled by the limitations of the current flowing in the discharge circuit. A ballast resistor was an important factor in affecting the limitations of the operating discharge mode. The gas breakdown was initially generated in the self-pulsing discharge mode at the source voltage of 1.2 kV. This was slightly higher than the breakdown voltage at the experimental condition of 1 lpm of Argon and a 1 mm electrode gap distance. The peak self-pulsing discharge currents were up to 15–20 A with a self-pulsing frequency in the range of 10–20 kHz. The continuous discharge mode could be observed at the higher source voltage with the continuous discharge current within the range of a few milliamperes.

  12. Linear and Nonlinear Dust Acoustic Waves, Shocks and Stationary Structures in a dc-Glow-Discharge Dusty Plasma

    NASA Astrophysics Data System (ADS)

    Merlino, Robert

    2011-10-01

    In 1990, Rao, Shukla, and Yu (Planet. Space Sci. 38, 543) predicted the existence of the dust acoustic (DA) wave, a low-frequency (~ few Hz), compressional dust density wave that propagates through a dusty plasma at a phase speed ~ several cm/s. The DA wave was first observed by Chu et. al., (J. Phys. D: Appl. Phys. 27, 296, 1994) in an rf-produced dusty plasma, and by Barkan et. al., (Barkan et. al. Phys. Plasmas 2, 2161, 1995) who obtained video images of the DA wave trains using light scattering from a dust suspension confined in an anodic glow discharge plasma formed within a Q machine plasma. The dispersion relation for DAWs was measured by Thompson et. al., (Phys. Plasmas 4, 2331, 1997) in a dc glow discharge dusty plasma by modulating the discharge current at a set frequency. DAWs have been investigated by many groups both in weakly-coupled and strongly-coupled dusty plasmas (E. Thomas, Jr., Contrib. Plasma Phys. 49, 316, 2009). In most experiments where DA waves are present, the wave amplitude is relatively high, indicating that they are nonlinear. In this talk, results of our recent experiments on DAWs will be presented. The following experiments, performed in a dc glow-discharge dusty plasma will be described: (1) Observations of spontaneously excited nonlinear, cylindrical DAWs, which exhibit confluence of waves propagating at different speeds. (2) Investigations of self-steepening DAWs that develop into DA shocks with thicknesses comparable to the interparticle separation (Heinrich et. al., Phys. Rev. Lett. 103, 115001, 2009). (3) Measurements of the linear growth rates of DAWs excited in merging dust clouds. (4) The formation of stationary, stable dust density structures appearing as non-propagating DAWs (Heinrich et. al., Phys. Rev. E, in press, 2011). This work was performed in collaboration with S. H. Kim, J. R. Heinrich, and J. K. Meyer. Work supported by DOE Grant No. DE-FG01-04ER54795

  13. Nitrogen Plasma Instabilities and the Growth of Silicon Nitride by Electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Pool, F. S.

    1996-01-01

    Nitrogen plasma instabilities have been identified through fluctuations in the ion current density and substrate floating potential. The plasma characteristics for both nitrogen and silane-nitrogen plasmas are consistent with a transition from an underdense to overdense plasma at 0.9 and 1.0 mTorr respectively.

  14. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    SciTech Connect

    Knoops, Harm C. M. E-mail: w.m.m.kessels@tue.nl; Peuter, K. de; Kessels, W. M. M. E-mail: w.m.m.kessels@tue.nl

    2015-07-06

    The requirements on the material properties and growth control of silicon nitride (SiN{sub x}) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiN{sub x} by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiN{sub x} by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiN{sub x} ALD using SiH{sub 2}(NH{sup t}Bu){sub 2} as precursor and N{sub 2} plasma as reactant, the gas residence time τ was found to determine both SiN{sub x} film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

  15. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zuo, Zheng; Liu, Jianlin

    2015-11-23

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.

  16. Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation

    NASA Astrophysics Data System (ADS)

    Mishina, Ken; Ogishi, Atsufumi; Ueno, Kiyoshi; Jonai, Sachiko; Ikeno, Norihiro; Saruwatari, Tetsuya; Hara, Kohjiro; Ogura, Atsushi; Yamazaki, Toshiharu; Doi, Takuya; Shinohara, Makoto; Masuda, Atsushi

    2015-08-01

    The antireflection coating (ARC) on crystalline silicon solar cells plays an important role in preventing potential-induced degradation (PID). In a previous work, we reported that the module, which has an ARC prepared by plasma-enhanced chemical-vapor deposition (PE-CVD) using a hollow cathode, indicated high resistance to PID with a constant conventional refractive index (RI). In this work, we report further investigation of the high-PID-resistant ARC. The results indicate that the high-PID resistant ARC had high conductivity, high Si-H bond density, and low N-H bond density. Furthermore, both higher PID resistance and higher conversion efficiency are achieved using an ARC of double or triple layers comprising stacked silicon nitride layers of different RI than those of a conventional single-layer ARC.

  17. A study of structural and mechanical properties of nano-crystalline tungsten nitride film synthesis by plasma focus

    NASA Astrophysics Data System (ADS)

    Hussnain, Ali; Singh Rawat, Rajdeep; Ahmad, Riaz; Hussain, Tousif; Umar, Z. A.; Ikhlaq, Uzma; Chen, Zhong; Shen, Lu

    2015-02-01

    Nano-crystalline tungsten nitride thin films are synthesized on AISI-304 steel at room temperature using Mather-type plasma focus system. The surface properties of the exposed substrate against different deposition shots are examined for crystal structure, surface morphology and mechanical properties using X-ray diffraction (XRD), atomic force microscope, field emission scanning electron microscope and nano-indenter. The XRD results show the growth of WN and WN2 phases and the development of strain/stress in the deposited films by varying the number of deposition shots. Morphology of deposited films shows the significant change in the surface structure with different ion energy doses (number of deposition shots). Due to the effect of different ion energy doses, the strain/stress developed in the deposited film leads to an improvement of hardness of deposited films.

  18. Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

    SciTech Connect

    Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe; Blasco, Nicolas

    2013-03-18

    Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

  19. Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process

    NASA Astrophysics Data System (ADS)

    Chiang, Chen-Kuo; Wu, Chien-Hung; Liu, Chin-Chien; Lin, Jin-Fu; Yang, Chien-Lun; Wu, Jiun-Yuan; Wang, Shui-Jinn

    2012-10-01

    The NH3 thermal annealing and decoupled plasma nitridation (DPN) processes are compared for the equivalent oxide thickness (EOT) scaling of atomic-layer-deposited hafnium zirconate (HfZrO2) gate dielectric. Detailed physical, optical, and electrical characteristics of nitrided HfZrO2 (HfZrON) film are reported. It is found that DPN can yield a thinner SiOx interfacial layer (IL) (about 0.12 nm more in terms of EOT scaling) and a more densified HfZrO2 layer compared to those obtained using NH3 thermal annealing at a 16% nitrogen dose. NH3 thermal nitridation causes a large nitrogen distribution tail at the SiOx IL/Si substrate interface and increases leakage current, which suppresses EOT scalability.

  20. Effects of Ti-C:H coating and plasma nitriding treatment on tribological, electrochemical, and biocompatibility properties of AISI 316L.

    PubMed

    Kao, W H; Su, Y L; Horng, J H; Zhang, K X

    2016-08-01

    Ti-C:H coatings were deposited on original, nitrided, and polished-nitrided AISI 316L stainless steel substrates using a closed field unbalanced magnetron sputtering system. Sliding friction wear tests were performed in 0.89 wt.% NaCl solution under a load of 30 N against AISI 316L stainless steel, Si3N4, and Ti6Al4V balls, respectively. The electrochemical properties of the various specimens were investigated by means of corrosion tests performed in 0.89 wt.% NaCl solution at room temperature. Finally, the biocompatibility properties of the specimens were investigated by performing cell culturing experiments using purified mouse leukemic monocyte macrophage cells (Raw264.7). In general, the results showed that plasma nitriding followed by Ti-C:H coating deposition provides an effective means of improving the wear resistance, anti-corrosion properties, and biocompatibility performance of AISI 316L stainless steel. PMID:27422714

  1. Geopolymers prepared from DC plasma treated air pollution control (APC) residues glass: properties and characterisation of the binder phase.

    PubMed

    Kourti, Ioanna; Devaraj, Amutha Rani; Bustos, Ana Guerrero; Deegan, David; Boccaccini, Aldo R; Cheeseman, Christopher R

    2011-11-30

    Air pollution control (APC) residues have been blended with glass-forming additives and treated using DC plasma technology to produce a high calcium aluminosilicate glass (APC glass). This has been used to form geopolymer-glass composites that exhibit high strength and density, low porosity, low water absorption, low leaching and high acid resistance. The composites have a microstructure consisting of un-reacted residual APC glass particles imbedded in a complex geopolymer and C-S-H gel binder phase, and behave as particle reinforced composites. The work demonstrates that materials prepared from DC plasma treated APC residues have potential to be used to form high quality pre-cast products. PMID:21963174

  2. Characteristics of sheath-driven tangential flow produced by a low-current DC surface glow discharge plasma actuator

    NASA Astrophysics Data System (ADS)

    Shin, Jichul; Shajid Rahman, Mohammad

    2014-08-01

    An experimental investigation of low-speed flow actuation at near-atmospheric pressure is presented. The flow actuation is achieved via low-current ( \\lesssim 1.0 mA) continuous or pulsed DC surface glow discharge plasma. The plasma actuator, consisting of two sharp-edged nickel electrodes, produces a tangential flow in a direction from anode to cathode, and is visualized using high-speed schlieren photography. The induced flow velocity estimated via the schlieren images reaches up to 5 m/s in test cases. The actuation capability increases with pressure and electrode gap distances, and the induced flow velocity increases logarithmically with the discharge power. Pulsed DC exhibits slightly improved actuation capability with better directionality. An analytic estimation of induced flow velocity obtained based on ion momentum in the cathode sheath and gas dynamics in one-dimensional flow yields values similar to those measured.

  3. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    NASA Astrophysics Data System (ADS)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  4. Development of a DC Glow Discharge Exhibit for the Demonstration of Plasma Behavior in a Magnetic Field

    NASA Astrophysics Data System (ADS)

    Bruder, Daniel

    2010-11-01

    The DC Glow Discharge Exhibit is intended to demonstrate the effects a magnetic field produces on a plasma in a vacuum chamber. The display, which will be featured as a part of The Liberty Science Center's ``Energy Quest Exhibition,'' consists of a DC glow discharge tube and information panels to educate the general public on plasma and its relation to fusion energy. Wall posters and an information booklet will offer brief descriptions of fusion-based science and technology, and will portray plasma's role in the development of fusion as a viable source of energy. The display features a horse-shoe magnet on a movable track, allowing viewers to witness the effects of a magnetic field upon a plasma. The plasma is created from air within a vacuum averaging between 100-200 mTorr. Signage within the casing describes the hardware components. The display is pending delivery to The Liberty Science Center, and will replace a similar, older exhibit presently at the museum.

  5. Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

    SciTech Connect

    Khan, Majid; Islam, Mohammad

    2013-12-15

    Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thin films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ∼550 nm and electrical resistivity value of 0.57 × 10{sup −4} Ω cm.

  6. Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas

    NASA Astrophysics Data System (ADS)

    Sahu, B. B.; Shin, Kyung S.; Han, Jeon G.

    2016-02-01

    This study investigates low-temperature plasma nitriding of hydrogenated silicon (SiN x :H) film in radio frequency (RF) and RF-ultra-high frequency (UHF) hybrid plasmas. To study the optimized conditions for the deposition of SiN x :H film, this work adopts a systematic plasma diagnostic approach in the nitrogen-silane and nitrogen-silane-ammonia plasmas. This work also evaluates the capability of plasma and radical formation by utilizing different plasma sources in the PECVD process. For the plasma diagnostics, we have purposefully used the combination of optical emission spectroscopy (OES), intensified CCD (ICCD) camera, vacuum ultraviolet absorption spectroscopy (VUVAS), and RF compensated Langmuir probe (LP). Data reveal that there is significant enhancement in the atomic nitrogen radicals, plasma densities, and film properties using the hybrid plasmas. Measurements show that addition of a small amount of NH3 can significantly reduce the electron temperature, plasma, and radical density. Also, optical and chemical properties of the deposited films are investigated on the basis of plasma diagnostics. Good quality SiN x :H films, with atomic nitrogen to hydrogen ratio of 4:1, are fabricated. The plasma chemistry of the hybrid plasmas is also discussed for its utility for plasma applications.

  7. Advances and directions of ion nitriding/carburizing

    NASA Technical Reports Server (NTRS)

    Spalvins, Talivaldis

    1989-01-01

    Ion nitriding and carburizing are plasma activated thermodynamic processes for the production of case hardened surface layers not only for ferrous materials, but also for an increasing number of nonferrous metals. When the treatment variables are properly controlled, the use of nitrogenous or carbonaceous glow discharge medium offers great flexibility in tailoring surface/near-surface properties independently of the bulk properties. The ion nitriding process has reached a high level of maturity and has gained wide industrial acceptance, while the more recently introduced ion carburizing process is rapidly gaining industrial acceptance. The current status of plasma mass transfer mechanisms into the surface regarding the formation of compound and diffusion layers in ion nitriding and carbon build-up ion carburizing is reviewed. In addition, the recent developments in design and construction of advanced equipment for obtaining optimized and controlled case/core properties is summarized. Also, new developments and trends such as duplex plasma treatments and alternatives to dc diode nitriding are highlighted.

  8. Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering

    SciTech Connect

    Ni, Chih-Jui; Chau-Nan Hong, Franklin

    2014-05-15

    Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N{sub 2} were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500 °C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300 °C. The N:Ga ratio of the film grown at 500 °C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.

  9. A review of the gas species activity and control of pulsed plasma technology during the nitriding, carburizing and carbonitriding processes

    SciTech Connect

    Pye, D.

    1995-12-31

    The control of gas activity and process technology has developed tremendously over the past two decades. While once considered to be primitive control systems using simple PID loops with thermocouples that were suspect and unable to perform repeatedly and consistently during the arduous process of plasma nitriding and processing, developments in recent years have elevated the control of the process into what might be considered one of the most controllable processes of the latter part of this century. The advent of plasma processing technology has improved control methods by observing and harnessing each of the various process parameters into many different combinations of control systems. Some of these control systems can control the complete function of the process, thus freeing the operator entirely for other duties, except that of load and unload, to the point where the operator is intimately involved with the process. Some of the control methods report from the process to a PLC through to a PC, and current developments rely entirely on computers and developed software shown on various screens. This presentation will review some of the more common process control methods, including that of highly developed PC systems.

  10. Production of water mist from electrolyte surface in contact with atmospheric-pressure dc helium glow plasma

    NASA Astrophysics Data System (ADS)

    Sasaki, K.; Ishigame, H.; Nishiyama, S.

    2015-09-01

    Plasma-liquid interaction is a new subject which has been opened by developments of atmospheric-pressure plasma sources. In this work, we adopted laser Mie scattering to examine an atmospheric-pressure dc helium glow plasma in contact with NaCl solution. The plasma was produced by applying a dc voltage between a stainless-steel gas nozzle and the electrolyte via a register of 100 k Ω. The gap distance between the electrolyte surface and the electrode was 4 mm. Helium as a working gas was fed from the nozzle toward the electrolyte surface. The discharge space was illuminated using a cw laser beam at a wavelength of 457 nm, and the scattered laser light was captured using a high-speed camera with an image intensifier via an interference filter at the laser wavelength. The scattered laser light told us the existence of particulates or water mists in the discharge space. The water mists were produced from the electrolyte surface explosively as well as randomly. The trajectories of the mists were basically parabolic. We sometimes observed the expansion of the mist size in the gas phase. The expansion was followed by the disappearance of the mist. This may be due to the evaporation of the mist, and is considered to be the production mechanism of Na in the gas phase.