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Sample records for dc plasma nitriding

  1. Effects of DC plasma nitriding parameters on microstructure and properties of 304L stainless steel

    SciTech Connect

    Wang Jun; Xiong Ji Peng Qian; Fan Hongyuan; Wang Ying; Li Guijiang; Shen Baoluo

    2009-03-15

    A wear-resistant nitrided layer was formed on a 304L austenitic stainless steel substrate by DC plasma nitriding. Effects of DC plasma nitriding parameters on the structural phases, micro-hardness and dry-sliding wear behavior of the nitrided layer were investigated by optical microscopy, X-ray diffraction, scanning electron microscopy, micro-hardness testing and ring-on-block wear testing. The results show that the highest surface hardness over a case depth of about 10 {mu}m is obtained after nitriding at 460 deg. C. XRD indicated a single expanded austenite phase and a single CrN nitride phase were formed at 350 deg. C and 480 deg. C, respectively. In addition, the S-phase layers formed on the samples provided the best dry-sliding wear resistance under the ring-on-block contact configuration test.

  2. Study on the influence of nitrogen on titanium nitride in a dc post magnetron sputtering plasma system

    NASA Astrophysics Data System (ADS)

    Moni Borah, Sankar; Bailung, Heremba; Ratan Pal, Arup; Chutia, Joyanti

    2008-10-01

    The characteristics of direct current (dc) glow discharge plasma have been studied in a post magnetron device with an argon and nitrogen gas mixture. The introduction of nitrogen modifies the discharge leading to modifications of plasma parameters, transport mechanism and the cathode sheath. The electron energy distribution function, density and temperature profile are measured to characterize the discharge. Measured plasma potential profiles show the modification of the structure of the cathode sheath and confinement space variation. Optical emission spectroscopy is used to identify prominent transitions of the different species in the discharge. The discharge mode in argon undergoes a transition from metallic mode to reactive mode when nitrogen concentration exceeds argon.

  3. Analysis of plasma nitrided steels

    NASA Technical Reports Server (NTRS)

    Salik, J.; Ferrante, J.; Honecy, F.; Hoffman, R., Jr.

    1987-01-01

    The analysis of plasma nitrided steels can be divided to two main categories - structural and chemical. Structural analysis can provide information not only on the hardening mechanisms but also on the fundamental processes involved. Chemical analysis can be used to study the kinetics for the nitriding process and its mechanisms. In this paper preliminary results obtained by several techniques of both categories are presented and the applicability of those techniques to the analysis of plasma-nitrided steels is discussed.

  4. Nitriding of titanium and its alloys by N2, NH3 or mixtures of N2 + H2 in a dc arc plasma at low pressures ( or = to torr)

    NASA Technical Reports Server (NTRS)

    Avni, R.

    1984-01-01

    The dc glow discharges in different gas mixtures of Ar + N2, Ar + NH3 or Ar + N2 + H2 result in the surface nitriding of Ti metal and its alloy (Ti6Al4V). Various gas mixtures were used in order to establish the main active species governing the nitriding process, i.e., N, N2, NH, or NH2 as excited or ionized particles. The dc discharge was sampled and analyzed by quadruple mass spectrometry (QPMS) and optical emission spectroscopy (OES), and the nitrided samples were analyzed by scanning electron microscopy (SEM) with an EDAX attachment, microhardness, and Fourier transform infrared reflectance spectrometry (FTIR). It was found that the excited and ionized nitrogen and hydrogen atoms are the main species responsible for the nitriding process in a dc glow discharge.

  5. Analysis of plasma-nitrided steels

    NASA Technical Reports Server (NTRS)

    Salik, J.; Ferrante, J.; Honecy, F.; Hoffman, R., Jr.

    1986-01-01

    The analysis of plasma nitrided steels can be divided to two main categories - structural and chemical. Structural analysis can provide information not only on the hardening mechanisms but also on the fundamental processes involved. Chemical analysis can be used to study the kinetics for the nitriding process and its mechanisms. In this paper preliminary results obtained by several techniques of both categories are presented and the applicability of those techniques to the analysis of plasma-nitrided steels is discussed.

  6. Effects of Plasma Nitriding on the Tensile Properties of Al-Mg-Si

    NASA Astrophysics Data System (ADS)

    Ghauri, I. M.; Ahmad, R.; Mubarik, F. E.; Afzal, Naveed; Ahmed, Sajjad; Ayub, R.

    2012-07-01

    Effects of plasma nitriding on the tensile behavior of Al-Mg-Si alloy were investigated in this study. The specimens were nitrided at 70 W input pulsed DC power at 1 mbar pressure of nitrogen for 4 h using glow discharge plasma. The formation of aluminum nitride layer on the specimen's surface was confirmed by the XRD analysis. Stress-strain curves of both un-nitrided and nitrided specimens were obtained using Universal Testing Machine. The comparison of these curves reveals that yield stress, ultimate tensile stress, percentage elongation, and stress relaxation rate decrease after plasma nitriding. The changes in the tensile properties after nitriding have been correlated with the changes in the microstructure of the specimens as observed using scanning electron microscope.

  7. Surface modification of AISI 304 austenitic stainless steel by plasma nitriding

    NASA Astrophysics Data System (ADS)

    Liang, Wang

    2003-04-01

    Plasma nitriding of austenitic stainless steel samples has been carried out using pulse dc glow discharge plasma of NH 3 gas at substrate temperature ranging from 350 to 520 °C. A nitriding time of only 4 h has been found to produce a compact surface nitride layer composed of γN' phase with a thickness of around 7-12 μm as processing temperature remained between 420 and 450 °C. The thickness of γN phase was found to be very thin only about 2 μm after plasma nitriding at temperature below 400 °C. Microhardness measurements showed significant increase in the hardness from 240 HV (for untreated samples) up to 1700 HV (for nitrided samples at temperature of 460 °C). For nitriding at higher temperature, i.e. above 460 °C, the chromium nitrides precipitated in the nitrided layer and caused austenite phase transform into ferrite phase or iron nitrides ( γ' or ɛ). The consequent result of chromium nitride precipitation is the reduction of corrosion resistance of nitrided layer. Compressive residual stresses existed in the nitrided layer due to nitrogen diffusion into austenitic stainless steel.

  8. Argon gas concentration effects on nanostructured molybdenum nitride layer growth using 100 Hz pulsed dc glow discharge

    NASA Astrophysics Data System (ADS)

    Ikhlaq, U.; Ahmad, R.; Saleem, S.; Shah, M. S.; Umm-i-Kalsoom; Khan, N.; Khalid, N.

    2012-08-01

    The effect of argon concentration (10%-40%) on the surface properties of molybdenum is studied in nitrogen-argon mixture using 100 Hz pulsed dc glow discharge. The analysis is carried out by using X-ray diffractometer (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Vickers microhardness tester to investigate surface properties of the nitrided samples. XRD results exhibit the formation of molybdenum nitrides. Crystallite size analysis and SEM morphology confirm the growth of nanostructured molybdenum nitride layers. Moreover, significant increase in surface hardness (by a factor of about two times) is found when the sample is treated for 30% argon in nitrogen-argon mixed plasma.

  9. A Plasma-Based DC-DC Electrical Transformer

    NASA Astrophysics Data System (ADS)

    Nebel, Richard; Finn, John

    2013-10-01

    Previous work has indicated that it may be possible to make DC-DC electrical transformers using plasmas. The mechanism is an MHD electromagnetic relaxation process induced by helical electrodes. This process is now being tested on the Bismark device at Tibbar Technologies.

  10. Metal surface nitriding by laser induced plasma

    NASA Astrophysics Data System (ADS)

    Thomann, A. L.; Boulmer-Leborgne, C.; Andreazza-Vignolle, C.; Andreazza, P.; Hermann, J.; Blondiaux, G.

    1996-10-01

    We study a nitriding technique of metals by means of laser induced plasma. The synthesized layers are composed of a nitrogen concentration gradient over several μm depth, and are expected to be useful for tribological applications with no adhesion problem. The nitriding method is tested on the synthesis of titanium nitride which is a well-known compound, obtained at present by many deposition and diffusion techniques. In the method of interest, a laser beam is focused on a titanium target in a nitrogen atmosphere, leading to the creation of a plasma over the metal surface. In order to understand the layer formation, it is necessary to characterize the plasma as well as the surface that it has been in contact with. Progressive nitrogen incorporation in the titanium lattice and TiN synthesis are studied by characterizing samples prepared with increasing laser shot number (100-4000). The role of the laser wavelength is also inspected by comparing layers obtained with two kinds of pulsed lasers: a transversal-excited-atmospheric-pressure-CO2 laser (λ=10.6 μm) and a XeCl excimer laser (λ=308 nm). Simulations of the target temperature rise under laser irradiation are performed, which evidence differences in the initial laser/material interaction (material heated thickness, heating time duration, etc.) depending on the laser features (wavelength and pulse time duration). Results from plasma characterization also point out that the plasma composition and propagation mode depend on the laser wavelength. Correlation of these results with those obtained from layer analyses shows at first the important role played by the plasma in the nitrogen incorporation. Its presence is necessary and allows N2 dissociation and a better energy coupling with the target. Second, it appears that the nitrogen diffusion governs the nitriding process. The study of the metal nitriding efficiency, depending on the laser used, allows us to explain the differences observed in the layer features

  11. Reactive plasma atomization of aluminum nitride powder

    SciTech Connect

    Prichard, P.; Besser, M.; Sordelet, D.; Anderson, I.

    1997-02-01

    Experiments were performed to synthesize AlN powders by reacting Al with N using a conventional dc arc plasma as heat source. Feeding Al powder into Ar/N plasma open to atmosphere produced mainly Al oxide. Experiments using a chamber backfilled with nitrogen suppressed the Al oxide, but little AlN was formed. A furnace and crucible assembly was designed to feed molten Al directly into a DeLaval nozzle attached to the face of the dc arc plasma gun. Resulting submicron powders show a significant increase in AlN formation. This was dependent on chamber pressure, plasma velocity, and molten liquid feed rate. Experimental parameters, equipment design, effects of atomization/vaporization/condensation are discussed.

  12. Early stages during plasma nitriding of pure iron

    SciTech Connect

    Palacios, M.D.; Martinez, O.; Oseguera, J.

    1995-12-31

    The sequence of nitride formation during the early stages of plasma nitriding of pure iron was studied by optical microscopy, SEM, TEM and x-ray diffraction. Plasma nitriding at {approximately}490 C in a 25 vol.%H{sub 2} + 75 vol.%N{sub 2} mixture starts with the formation of {gamma}{prime}-Fe{sub 4}N after 40s. Once {gamma}{prime} nucleates, it mainly spreads laterally due to diffusion shortcuts in the discontinuous surface nitride layer. Before {gamma}{prime} is continuous on the surface, {epsilon} nucleates on top of it shortly after 40S. Epsilon is then observed to grow, both inwardly and laterally along with {gamma}{prime}. A compact {gamma}{prime}/{epsilon} bilayer forms on the surface at around 100s. The kinetics of nucleation, growth and compactation of the nitrides observed in the present work was significantly more rapid than in any of the nitriding process reported in the literature, including plasma nitriding. The acceleration of the nitriding kinetics in the early stages of plasma nitriding may be attributed to enhanced diffusion resulting from a high nitrogen flux from the plasma atmosphere. The results presented are consistent with the findings of a companion work on modeling the kinetics of nitride layer growth.

  13. The effect of Mo on the characteristics of a plasma nitrided layer of sintered iron

    NASA Astrophysics Data System (ADS)

    Bendo, T.; Maliska, A. M.; Acuña, J. J. S.; Binder, C.; Hammes, G.; Consoni, D. R.; Klein, A. N.

    2016-02-01

    Samples of PM (powder metallurgy) plain iron were superficially enriched with Mo during a sintering process using a DC discharge. The Mo atoms from the cathode produced an enriched layer of approximately 15-20 μm thick, and it was enriched with up to 2.0 at.% Mo. Subsequently, the samples were plasma nitrided in a gas mixture (N2/H2) at different temperatures and nitrogen concentrations. The effect of the molybdenum on the plasma nitrided layer of sintered iron was investigated. Abnormal nitride morphologies that developed in the surface layer were observed. The presence of Mo that was substitutionally dissolved in ferrite influences the nucleation and growth of the iron-nitride compound layer. The microstructure and (local) composition changes of the layers were investigated using scanning and transmission electron microscopy (SEM and TEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and glow discharge optical emission spectroscopy (GDOES) analyses. To evaluate the mechanical properties, Vickers microhardness tests were conducted along the sample cross-sections. According to the nitriding conditions, submicroscopic fcc Mo2N-type nitrides that are coherent with the α-Fe matrix develop, as confirmed by the TEM analysis and by the broadening of the diffraction lines in the X-ray diffractogram. Molybdenum nitrides, γ-Mo2N, with an fcc structure and sphere-like shapes were observed on the sample surface where the Mo concentrations were higher.

  14. A dc Penning surface-plasma source

    SciTech Connect

    Smith, H.V. Jr.; Allison, P.; Geisik, C.; Schmitt, D.R.; Schneider, J.D.; Stelzer, J.E.

    1993-09-01

    After developing a pulsed-8X source for H{sup {minus}} beams, we are now testing a cooled, dc version. The design dc power density on the cathode surface is 900 W/cm{sup 2}, much higher than achieved in any previously-reported Penning surface-plasma source (SPS). The source is designed to accommodate dc arc power levels up to 30 kW by cooling the electrode surfaces with pressurized, hot water. After striking the arc using a 600-V pulser, a 350-V dc power supply is switched in to sustain the 100-V discharge. Now our tests are concentrating on arc pulse lengths {le}1 s. Ultimately, the discharge will be operated dc. The source is described and the initial arc test results are presented.

  15. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    NASA Astrophysics Data System (ADS)

    Hamann, S.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.; Röpcke, J.

    2015-12-01

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH4, C2H2, HCN, and NH3). With the help of OES, the rotational temperature of the screen plasma could be determined.

  16. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen.

    PubMed

    Hamann, S; Börner, K; Burlacov, I; Spies, H-J; Strämke, M; Strämke, S; Röpcke, J

    2015-12-01

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH4, C2H2, HCN, and NH3). With the help of OES, the rotational temperature of the screen plasma could be determined. PMID:26724023

  17. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    SciTech Connect

    Hamann, S. Röpcke, J.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.

    2015-12-15

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH{sub 4}, C{sub 2}H{sub 2}, HCN, and NH{sub 3}). With the help of OES, the rotational temperature of the screen plasma could be determined.

  18. Plasma-Activated Sintering of Aluminum Nitride

    NASA Astrophysics Data System (ADS)

    Hensley, J. E.; Risbud, S. H.; Groza, J. R.; Yamazaki, K.

    1993-10-01

    The use of a new plasma- activated sintering (PAS) process to densify aluminum nitride (AIN) powders to nearly full theoretical density (97 to >99%) in 5 to 10 min was investigated. The process consists of a pulse activation step, followed by sintering at 1730 to 1800 °C using resistance heating in carbon dies. Submicron size (~0.44 μm) AIN powders of low oxygen content (<1 wt%) were consolidated to near full density in both air and vacuum with no sintering aids or binders. Transmission electron microscopy (TEM) examination revealed an equiaxed, submicron grain structure (~0.77 μm) with no apparent pores or intergranular phases. X- ray powder diffraction revealed no secondary crystalline phases.

  19. Effect of Plasma Nitriding on the Performance of WC-Co Cutting Tools

    NASA Astrophysics Data System (ADS)

    Hamzaoglu, Ebru; Yilmaz, Safak; Gulmez, Turgut

    2011-04-01

    This paper presents the effect of nitriding process parameters on the cutting performance of WC-Co tools. The cutting performance was measured by CNC machining of GG25 cast iron parts. The hardness and phase composition of nitrided layer were determined for different plasma nitriding temperatures and times. The hardness of the nitrided layer increased at all plasma nitrided conditions investigated. However, the machining performance of the cutting inserts varied in the range between a 60% increase and a 40% decrease after plasma nitriding. The maximum number of machined parts was seen when the insert was nitrided at 600 °C-4 h and at 500 °C-4 h.

  20. Simulation of the dc Plasma in Carbon Nanotube Growth

    NASA Technical Reports Server (NTRS)

    Hash, David; Bose, Deepak; Govindan, T. R.; Meyyappan, M.; Biegel, Bryan (Technical Monitor)

    2003-01-01

    A model for the dc plasma used in carbon nanotube growth is presented, and one-dimensional simulations of an acetylene/ammonia/argon system are performed. The effect of dc bias is illustrated by examining electron temperature, electron and ion densities, and neutral densities. Introducing a tungsten filament in the dc plasma, as in hot filament chemical vapor deposition with plasma assistance, shows negligible influence on the system characteristics.

  1. Research of functional properties of nitride ion-plasma coatings

    NASA Astrophysics Data System (ADS)

    Vaulina, O. Yu; Ovechkin, B. B.; Papchenko, A. V.; Shvagrukova, E. V.

    2016-02-01

    This paper considers the influence of ion-plasma coatings with the use of nitrogen (N), zirconium nitride (ZrN), titanium-aluminum nitride (Ti,Al)N and titanium nitride and zirconium nitride by-layer (TiN+ZrN - eight layers) on the properties of steel 65X13. The main functional properties of the coatings are determined: microhardness, nanohardness, Young's modulus and corrosion resistance. It is shown that all the types of coatings allow increasing the physical and mechanical characteristics of instrument steel 65X13. Hardness and wear-resistance, depending on the type of the deposited coating, increase from 1, 5 to 4 times, corrosion resistance increases by tens times.

  2. Plasma deposited silicon nitride for indium phosphide encapsulation

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Kapoor, V. J.; Biedenbender, M. D.; Williams, W. D.

    1989-01-01

    The composition and the annealing characteristics of plasma-deposited silicon-nitride encapsulating films on the ion-implanted InP substrates were investigated, using two different substrate-cleaning procedures (organic solvents and HF or HIO3 solutions) prior to encapsulation. The effect of plasma deposition of silicon nitride on the InP substrates was assessed through the current-voltage characteristics of Schottky diodes. Results of XPS analyses showed that the cleaning procedure that employed HF solution left less oxygen on the InP surface than the procedure involving HIO3. No chemical interaction between the film and the substrate was observed before or after annealing.

  3. Plasma nitriding of Fe-18Cr-9Ni in the range of 723-823 K

    SciTech Connect

    Kuwahara, H.; Matsuoka, H.; Tamura, I. ); Takada, J. ); Kikuchi, S.; Tomii, Y. )

    1991-08-01

    To clarify the mechanism of plasma nitriding, the authors examined the optical microstructure, the hardness, the precipitation, and the concentration of dissolved nitrogen in Fe-18Cr-9Ni nitrided using plasma in the range of 723-823 K. Compared with ammonia-gas nitriding, the features of plasma nitriding are the formation of small chromium-nitride precipitates (CrN), the absence of an externally nitrided layer, the high concentration of dissolved nitrogen, and the high hardness (HV = 1,200). The diffusion coefficient of nitrogen in the present alloy was determined using the growth rate of the internally nitrided layer, based on calculations used in internal oxidation. Plasma- and gas-nitriding were also compared with respect to the growth rate of the nitrided layer.

  4. Bone tissue response to plasma-nitrided titanium implant surfaces.

    PubMed

    Ferraz, Emanuela Prado; Sverzut, Alexander Tadeu; Freitas, Gileade Pereira; Sá, Juliana Carvalho; Alves, Clodomiro; Beloti, Marcio Mateus; Rosa, Adalberto Luiz

    2015-01-01

    A current goal of dental implant research is the development of titanium (Ti) surfaces to improve osseointegration. Plasma nitriding treatments generate surfaces that favor osteoblast differentiation, a key event to the process of osteogenesis. Based on this, it is possible to hypothesize that plasma-nitrided Ti implants may positively impact osseointegration. Objective The aim of this study was to evaluate the in vivo bone response to Ti surfaces modified by plasma-nitriding treatments. Material and Methods Surface treatments consisted of 20% N2 and 80% H2, 450°C and 1.5 mbar during 1 h for planar and 3 h for hollow cathode. Untreated surface was used as control. Ten implants of each surface were placed into rabbit tibiae and 6 weeks post-implantation they were harvested for histological and histomorphometric analyses. Results Bone formation was observed in contact with all implants without statistically significant differences among the evaluated surfaces in terms of bone-to-implant contact, bone area between threads, and bone area within the mirror area. Conclusion Our results indicate that plasma nitriding treatments generate Ti implants that induce similar bone response to the untreated ones. Thus, as these treatments improve the physico-chemical properties of Ti without affecting its biocompatibility, they could be combined with modifications that favor bone formation in order to develop new implant surfaces. PMID:25760262

  5. Bone tissue response to plasma-nitrided titanium implant surfaces

    PubMed Central

    FERRAZ, Emanuela Prado; SVERZUT, Alexander Tadeu; FREITAS, Gileade Pereira; SÁ, Juliana Carvalho; ALVES, Clodomiro; BELOTI, Marcio Mateus; ROSA, Adalberto Luiz

    2015-01-01

    A current goal of dental implant research is the development of titanium (Ti) surfaces to improve osseointegration. Plasma nitriding treatments generate surfaces that favor osteoblast differentiation, a key event to the process of osteogenesis. Based on this, it is possible to hypothesize that plasma-nitrided Ti implants may positively impact osseointegration. Objective The aim of this study was to evaluate the in vivo bone response to Ti surfaces modified by plasma-nitriding treatments. Material and Methods Surface treatments consisted of 20% N2 and 80% H2, 450°C and 1.5 mbar during 1 h for planar and 3 h for hollow cathode. Untreated surface was used as control. Ten implants of each surface were placed into rabbit tibiae and 6 weeks post-implantation they were harvested for histological and histomorphometric analyses. Results Bone formation was observed in contact with all implants without statistically significant differences among the evaluated surfaces in terms of bone-to-implant contact, bone area between threads, and bone area within the mirror area. Conclusion Our results indicate that plasma nitriding treatments generate Ti implants that induce similar bone response to the untreated ones. Thus, as these treatments improve the physico-chemical properties of Ti without affecting its biocompatibility, they could be combined with modifications that favor bone formation in order to develop new implant surfaces. PMID:25760262

  6. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride - Technology and piezoelectric properties

    NASA Astrophysics Data System (ADS)

    Stoeckel, C.; Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-01

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d31 is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d33.

  7. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

    SciTech Connect

    Stoeckel, C. Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-21

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.

  8. Study of a nitriding plasma using coherent anti-Stokes Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Pealat, M.; Lefebvre, M.

    1987-01-01

    The rotational and vibrational distribution of the first levels of excitation of N2 molecular system were measured using Raman diffusion in the discharge of a nitriding plasma. The nitrided specimens were analyzed using metallography and X-ray diffraction.

  9. Moessbauer spectroscopy study on the corrosion resistance of plasma nitrided ASTM F138 stainless steel in chloride solution

    SciTech Connect

    Souza, S.D. de; Olzon-Dionysio, M.; Basso, R.L.O.; Souza, S. de

    2010-10-15

    Plasma nitriding of ASTM F138 stainless steel samples has been carried out using dc glow discharge under 80% H{sub 2}-20% N{sub 2} gas mixture, at 673 K, and 2, 4, and 7 h time intervals, in order to investigate the influence of treatment time on the microstructure and the corrosion resistance properties. The samples were characterized by scanning electron microscopy, glancing angle X-ray diffraction and conversion electron Moessbauer spectroscopy, besides electrochemical tests in NaCl aerated solution. A modified layer of about 6 {mu}m was observed for all the nitrided samples, independent of nitriding time. The X-ray diffraction analysis shows broad {gamma}{sub N} phase peaks, signifying a great degree of nitrogen supersaturation. Besides {gamma}{sub N,} the Moessbauer spectroscopy results indicated the occurrence of {gamma}' and {epsilon} phases, as well as some other less important phases. Corrosion measurements demonstrate that the plasma nitriding time affects the corrosion resistance and the best performance is reached at 4 h treatment. It seems that the {epsilon}/{gamma}' fraction ratio plays an important role on the resistance corrosion. Additionally, the Moessbauer spectroscopy was decisive in this study, since it was able to identify and quantify the iron phases that influence the corrosion resistance of plasma nitrided ASTM F138 samples.

  10. Development of Simplified Atmospheric-Pressure Plasma Nitriding

    NASA Astrophysics Data System (ADS)

    Yamamoto, Hirofumi; Ichiki, Ryuta; Maeda, Akihide; Yamanouchi, Kenta; Akamine, Shuichi; Kanazawa, Seiji; Oita University Team

    2015-09-01

    Nitriding treatment is one of the surface hardening technologies, applied to dies and automobile components. In recent industry, low-pressure nitriding treatment using vacuum system is mainstream. On the other hand, we have originally developed an atmospheric-pressure plasma nitriding which do not need vacuum system. However we needed an air-tight container to purge residual oxygen and external heater to control treatment temperature. To make this technique practical, we addressed to construct a simplified treatment system, where treatment temperature is controlled by thermal plasma itself and oxygen purging is achieved by a simple cover. This means that any air-tight container and external heater is not necessary. As a result, surface temperature is controlled by changing treatment gap from nozzle tip to steel surface. We succeeded in controlling well thickness of hardened layer by adjusting treatment temperature even in such a simplified system. In the conference, we also discuss experimental results for hardening complex shaped materials by using our simplified nitriding.

  11. Energy Balance in DC Arc Plasma Melting Furnace

    NASA Astrophysics Data System (ADS)

    Zhao, Peng; Meng, Yuedong; Yu, Xinyao; Chen, Longwei; Jiang, Yiman; Ni, Guohua; Chen, Mingzhou

    2009-04-01

    In order to treat hazardous municipal solid waste incinerator's (MSWI) fly ash, a new DC arc plasma furnace was developed. Taking an arc of 100 V/1000 A DC as an example, the heat transfer characteristics of the DC arc plasma, ablation of electrodes, heat properties of the fly ash during melting, heat transfer characteristics of the flue gas, and heat loss of the furnace were analyzed based on the energy conservation law, so as to achieve the total heat information and energy balance during plasma processing, and to provide a theoretical basis for an optimized design of the structure and to improve energy efficiency.

  12. Bright nitriding of Cr-Mo-steels in plasma and gas

    SciTech Connect

    Larisch, B.; Spies, H.J.; Hoeck, K.

    1995-12-31

    Although the reduction of the white layer in special gas atmospheres directly after nitriding and bright nitriding were reported a long time ago, the white layer is mostly removed by mechanical or chemical means in industrial practice. The main reason for this is poor process control. However, new requirements such as the duplex treatment (nitriding + hardcoating), demand a more detailed examination of bright nitriding. Today, new possibilities exist for process control in gas nitriding by solid electrolyte sensors. Steel grades 17CrMoV10 and 31CrMoV9 were bright nitrided in gas and plasma. In contrast to the above experiments, in the two-step technology no white layer forms in the first step (20min) at a higher nitriding potential. By this, the formation of a soft surface layer (of iron) can be avoided. Limits of this technology--for instance in the depth of the formed nitrided case--are discussed. Reasons for the often discussed faster nitriding in plasma are explained on the basis of the experimental results. The influence of ion bombardment in plasma nitriding on the activation of the surface and the nitriding results is discussed in comparison to gas nitriding. In this context the advantages of plasma nitriding--with respect to higher chromium alloyed steels (>5%Cr), which tend to passivation--are shown.

  13. Synthesis of silicon nitride particles in pulsed Rf plasmas

    SciTech Connect

    Buss, R.J.; Babu, S.V.

    1995-11-01

    Silicon nitride (hydrogenated) particles are synthesized using a pulsed 13.56 Mhz glow discharge. The plasma is modulated with a square-wave on/off cycle of varying period to study the growth kinetics. In situ laser light scattering and ex situ particle analysis are used to study the nucleation and growth. For SiH{sub 4}/Ar and SiH{sub 4}/NH{sub 3} plasmas, an initial very rapid growth phase is followed by slower growth, approaching the rate of thin film deposition on adjacent flat surfaces. The average particle size can be controlled in the 10-100 nm range by adjusting the plasma-on time. The size dispersion of the particles is large and is consistent with a process of continuous nucleation during the plasma-on period. The large polydispersity is also reported for silicon particles from silane and differs from that reported in other laboratories. The silicon nitride particle morphology is compared to that of silicon and silicon carbide particles generated by the same technique. Whereas Si particles appear as rough clusters of smaller subunits, the SiC particles are smooth spheres, and the Si{sub 3}N{sub 4} particles are smooth but non-spherical. Post-plasma oxidation kinetics of the particles are studied with FTIR and are consistent with a hydrolysis mechanism proposed in earlier work with continuous plasmas. Heat treatment of the powder in an ammonia atmosphere results in the elimination of hydrogen, rendering the silicon nitride resistant to atmospheric oxidation.

  14. Nitriding molybdenum: Effects of duration and fill gas pressure when using 100-Hz pulse DC discharge technique

    NASA Astrophysics Data System (ADS)

    Ikhlaq, U.; R., Ahmad; Shafiq, M.; Saleem, S.; S. Shah, M.; Hussain, T.; A. Khan, I.; K., Abbas; S. Abbas, M.

    2014-10-01

    Molybdenum is nitrided by a 100-Hz pulsed DC glow discharge technique for various time durations and fill gas pressures to study the effects on the surface properties of molybdenum. X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) are used for the structural and morphological analysis of the nitrided layers. Vickers' microhardness tester is utilized to investigate surface microhardness. Phase analysis shows the formation of more molybdenum nitride molecules for longer nitriding durations at fill gas pressures of 2 mbar and 3 mbar (1 bar = 105 Pa). A considerable increase in surface microhardness (approximately by a factor of 2) is observed for longer duration (10 h) and 2-mbar pressure. Longer duration (10 h) and 2-mbar fill gas pressure favors the formation of homogeneous, smooth, hard layers by the incorporation of more nitrogen.

  15. Synthesis of silicon nitride particles in pulsed radio frequency plasmas

    SciTech Connect

    Buss, R.J.; Babu, S.V.

    1996-03-01

    Silicon nitride (hydrogenated) particles are synthesized using a pulsed 13.56 MHz glow discharge. The plasma is modulated with a square-wave on/off cycle of varying period to study the growth kinetics. {ital In} {ital situ} laser light scattering and {ital ex} {ital situ} particle analysis are used to study the nucleation and growth. For SiH{sub 4}/Ar and SiH{sub 4}/NH{sub 3} plasmas, an initial very rapid growth phase is followed by slower growth, approaching the rate of thin film deposition on adjacent flat surfaces. The average particle size can be controlled in the 10{endash}100 nm range by adjusting the plasma-on time. The size dispersion of the particles is large and is consistent with a process of continuous nucleation during the plasma-on period. The large polydispersity is also reported for silicon particles from silane and differs from that reported in other laboratories. The silicon nitride particle morphology is compared to that of silicon and silicon carbide particles generated by the same technique. Whereas Si particles appear as rough clusters of smaller subunits, the SiC particles are smooth spheres, and the Si{sub 3}N{sub 4} particles are smooth but nonspherical. Postplasma oxidation kinetics of the particles are studied with Fourier transform infrared spectra and are consistent with a hydrolysis mechanism proposed in earlier work with continuous plasmas. Heat treatment of the powder in an ammonia atmosphere results in the elimination of hydrogen, rendering the silicon nitride resistant to atmospheric oxidation. {copyright} {ital 1996 American Vacuum Society}

  16. Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

    SciTech Connect

    Kutsuki, Katsuhiro; Okamoto, Gaku; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2007-10-15

    We have investigated the stability of amorphous germanium nitride (Ge{sub 3}N{sub 4}) layers formed by plasma nitridation of Ge(100) surfaces using x-ray photoelectron spectroscopy and atomic force microscopy. We have found that humidity in the air accelerates the degradation of Ge{sub 3}N{sub 4} layers and that under 80% humidity condition, most of the Ge-N bonds convert to Ge-O bonds, producing a uniform GeO{sub 2} layer, within 12 h even at room temperature. After this conversion of nitrides to oxides, the surface roughness drastically increased by forming GeO{sub 2} islands on the surfaces. These findings indicate that although Ge{sub 3}N{sub 4} layers have superior thermal stability compared to the GeO{sub 2} layers, Ge{sub 3}N{sub 4} reacts readily with hydroxyl groups and it is therefore essential to take the best care of the moisture in the fabrication of Ge-based devices with Ge{sub 3}N{sub 4} insulator or passivation layers.

  17. Caracterisation of Titanium Nitride Layers Deposited by Reactive Plasma Spraying

    NASA Astrophysics Data System (ADS)

    Roşu, Radu Alexandru; Şerban, Viorel-Aurel; Bucur, Alexandra Ioana; Popescu, Mihaela; Uţu, Dragoş

    2011-01-01

    Forming and cutting tools are subjected to the intense wear solicitations. Usually, they are either subject to superficial heat treatments or are covered with various materials with high mechanical properties. In recent years, thermal spraying is used increasingly in engineering area because of the large range of materials that can be used for the coatings. Titanium nitride is a ceramic material with high hardness which is used to cover the cutting tools increasing their lifetime. The paper presents the results obtained after deposition of titanium nitride layers by reactive plasma spraying (RPS). As deposition material was used titanium powder and as substratum was used titanium alloy (Ti6Al4V). Macroscopic and microscopic (scanning electron microscopy) images of the deposited layers and the X ray diffraction of the coatings are presented. Demonstration program with layers deposited with thickness between 68,5 and 81,4 μm has been achieved and presented.

  18. PIII Plasma Density Enhancement by a New DC Power Source

    SciTech Connect

    Lopez-Callejas, R.; Godoy-Cabrera, O. G.; Granda-Gutierrez, E. E.; Piedad-Beneitez, A. de la; Munoz-Castro, A. E.; Valencia A, R.; Barocio, S. R.; Mercado-Cabrera, A.; Pena-Eguiluz, R.

    2006-12-04

    In practical terms, those plasmas produced by a DC voltage power supply do not attain densities above the 108 to 109 cm-3 band. Here we present a power supply, controlled in current and voltage, which has been successfully designed and constructed delivering plasma densities in the orders of 109 - 1010 cm-3. Its experimental performance test was conducted within one toroidal and one cylindrical chambers capable of 29 and 35 litres, respectively, using nitrogen gas. The DC plasma was characterized by a double electric probe. Several physical phenomena present in the PIII process have been keenly investigated including plasma sheath dynamics, interaction of plasma and surface, etc. In this paper we analyze the effect of the implantation voltage, plasma density and pulse time in the PIII average heating power and fluence density.

  19. Microstructure and antibacterial properties of microwave plasma nitrided layers on biomedical stainless steels

    NASA Astrophysics Data System (ADS)

    Lin, Li-Hsiang; Chen, Shih-Chung; Wu, Ching-Zong; Hung, Jing-Ming; Ou, Keng-Liang

    2011-06-01

    Nitriding of AISI 303 austenitic stainless steel using microwave plasma system at various temperatures was conducted in the present study. The nitrided layers were characterized via scanning electron microscopy, glancing angle X-ray diffraction, transmission electron microscopy and Vickers microhardness tester. The antibacterial properties of this nitrided layer were evaluated. During nitriding treatment between 350 °C and 550 °C, the phase transformation sequence on the nitrided layers of the alloys was found to be γ → (γ + γ N) → (γ + α + CrN). The analytical results revealed that the surface hardness of AISI 303 stainless steel could be enhanced with the formation of γ N phase in nitriding process. Antibacterial test also demonstrated the nitrided layer processed the excellent antibacterial properties. The enhanced surface hardness and antibacterial properties make the nitrided AISI 303 austenitic stainless steel to be one of the essential materials in the biomedical applications.

  20. Band gap effects of hexagonal boron nitride using oxygen plasma

    SciTech Connect

    Sevak Singh, Ram; Leong Chow, Wai; Yingjie Tay, Roland; Hon Tsang, Siu; Mallick, Govind; Tong Teo, Edwin Hang

    2014-04-21

    Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.

  1. Ion nitriding; Proceedings of the International Conference, Cleveland, OH, Sept. 15-17, 1986

    NASA Technical Reports Server (NTRS)

    Spalvins, T. (Editor)

    1987-01-01

    The present conference discusses plasma-assisted surface coating/modification processes, the applications to date of ion nitriding, the effects of nitrogen on metal surfaces, ion nitriding mechanisms in Cr, Al and Cr + Al-containing 1040 steel, ion nitriding of Al and its alloys, life enhancement for forging dies, novel anode plasma nitriding developments, and a comparative study of the pulsed and dc ion-nitriding behavior in specimens with blind holes. Also discussed are the influence of heating method on ion nitriding, surface hardening of marage steels by ion nitriding without core hardness reduction, plasma nitriding of nodular cast iron sput gears, NbN composites for superconductors, the carburization of tungsten in a glow discharge methane plasma, economic considerations concerning plasma nitriding, and the corrosion properties obtained by ion nitriding.

  2. Synthesis of silicon nanotubes by DC arc plasma method

    SciTech Connect

    Tank, C. M.; Bhoraskar, S. V.; Mathe, V. L.

    2012-06-05

    Plasma synthesis is a novel technique of synthesis of nanomaterials as they provide high rate of production and promote metastable reactions. Very thin walled silicon nanotubes were synthesized in a DC direct arc thermal plasma reactor. The effect of parameters of synthesis i.e. arc current and presence of hydrogen on the morphology of Si nanoparticles is reported. Silicon nanotubes were characterized by Transmission Electron Microscopy (TEM), Local Energy Dispersive X-ray analysis (EDAX), and Scanning Tunneling Microscopy (STM).

  3. Microstructure of boron nitride coated on nuclear fuels by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Durmazuçar, Hasan H.; Gündüz, Güngör; Toker, Canan

    1998-08-01

    Three nuclear fuels, pure urania, 5% and 10% gadolinia containing fuels were coated with boron nitride to improve nuclear and physical properties. Coating was done by plasma enhanced chemical vapor deposition technique by using boron trichloride and ammonia. The specimens were examined under a scanning electron microscope. Boron nitride formed a grainy structure on all fuels. Gadolinia decreased the grain size of boron nitride. The fractal dimensions of fragmentation and of area-perimeter relation were determined.

  4. Improving electrochemical properties of AISI 1045 steels by duplex surface treatment of plasma nitriding and aluminizing

    NASA Astrophysics Data System (ADS)

    Haftlang, Farahnaz; Habibolahzadeh, Ali; Sohi, Mahmoud Heydarzadeh

    2015-02-01

    Improvement in electrochemical behavior of AISI 1045 steel after applying aluminum nitride coating was investigated in 3.5% NaCl solution, using potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) analyses. Aluminum nitride coating was applied on the steel surface by duplex treatment of pack aluminizing and plasma nitriding. Some specimens were plasma nitrided followed by aluminizing (PN-Al), while the others were pack aluminized followed by plasma nitriding (Al-PN). Topological and structural studies of the modified surfaces were conducted using scanning electron microscope (SEM) equipped by energy dispersive X-ray spectroscope (EDS), and X-ray diffractometer (XRD). The electrochemical measurements showed that the highest corrosion and polarization (Rp) resistances were obtained in PN-Al specimens, having single phase superficial layer of AlN. Pitting mechanism was dominant reason of lower corrosion resistance in the Al-PN specimens.

  5. Analysis and experiments on thermal plasma processing for ultrafine powder synthesis of aluminium nitride

    SciTech Connect

    Ahn, H.; Hur, M.; Hong, S.H.

    1996-12-31

    Plasma synthesis experiments for producing ultrafine powders of aluminum nitride (AlN) are carried out using a non-transferred dc plasma torch of which jet flame can vaporize the aluminum powders injected into it to make the chemical reaction with nitrogen gas. For predicting the optimum processing parameters (the size, injected location and velocity of Al powders, and the ratio of nitrogen to argon arc gases), the trajectory and the evaporation state of an Al particle arc found by solving momentum and heat transfer equations. In addition, equilibrium chemical compositions are analyzed by the Gibbs free-energy minimization method to know the temperatures at which AlN synthesis occurs dominantly. A synthesis system consisting of a plasma torch, a reactor and a quenching chamber has been built for synthesis and quenching process of ultrafine powders of AlN. A fully-saturated fractional factorial test is employed to determine optimum process conditions for input power to the torch and flow rates of arc, carrier and reaction gases.

  6. Dust structurization observed in a dc glow discharge dusty plasma

    NASA Astrophysics Data System (ADS)

    Heinrich, Jonathon R.; Kim, Su-Hyun; Merlino, Robert L.

    2010-11-01

    Dusty plasmas, which are inherently open systems which require an ionization source to replenish the plasma absorbed on the grains, tend to exhibit self-organization. Various structures have been observed in dusty plasmas such as dust crystals, voids, and vortices. Due to the presence of drifting ions in dc discharge plasmas, spontaneously excited dust acoustic waves are also a common occurrence. By adjusting the discharge parameters we have observed a new phenomenon in dusty plasmas -- the spontaneous formation of three-dimensional stationary dust density structures. These structures appear as an ordered pattern consisting of alternating regions of high and low dust density arranged in a nested bowl-type configuration The stationary structure evolves from dust density waves that slow down as their wavelength decreases and eventually stop moving when the wavelength reaches some minimum size.

  7. Effect of plasma nitriding treatment on structural, tribological and electrochemical properties of commercially pure titanium.

    PubMed

    Çelik, İlhan; Karakan, Mehmet

    2016-02-01

    In this study, plasma nitriding treatment was applied to commercially pure titanium (Grade 2). Structural properties, electrochemical and tribological behaviours of the nitrided pure titanium specimens were comparatively investigated. Microstructure and morphology of the plasma nitrided specimens were analysed by X-ray diffraction and scanning electron microscopy. Furthermore, corrosion tests were conducted in Ringer's solution, which represents a human body environment, to determine electrochemical properties. Then, tribological and frictional properties were investigated using pin-on-disc tribometer, and a micro-hardness tester was used to measure the hardness of the coatings. The results showed that plasma nitrided specimens exhibited higher surface hardness than the untreated specimens did. In addition, the plasma nitrided specimens at 700 °C presented significantly better performance than the other plasma nitrided specimens (at 500 °C and 600 °C) under dry wear conditions. Moreover, corrosion test results showed that corrosion behaviours of untreated and nitrided samples had similar characteristic. PMID:26666885

  8. dc-plasma-sprayed electronic-tube device

    DOEpatents

    Meek, T.T.

    1982-01-29

    An electronic tube and associated circuitry which is produced by dc plasma arc spraying techniques is described. The process is carried out in a single step automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

  9. Diagnostics of DC plasma jets generated with Laval anodes

    SciTech Connect

    Rahmane, M.; Soucy, G.; Boulos, M.I.; Henne, R.

    1995-12-31

    Plasma jets originating from d.c. torches equipped with Laval nozzles are considered to be more efficient for both vacuum and atmospheric plasma spraying than those generated with the standard cylindrical anodes. The present study is devoted to the measurement of the temperature and velocity fields in plasma jets resulting from three different nozzles: a cylindrical and two Laval anodes with nominal Mach numbers of 2.5 and 3. The enthalpy probe and emission spectroscopy techniques are used for this purpose. Attention is given to the effect of the chamber pressure on the distribution of the temperature and velocity fields. The results show that when Laval nozzles are used at reduced chamber pressure (200 torr), the jets are wider, with higher temperature and velocity values in the central regions, compared to those obtained using cylindrical anodes. These characteristics are expected to improve the results of plasma spraying processes with respect to the layer quality and deposition efficiency.

  10. Mechanical properties and biocompatibility of plasma-nitrided laser-cut 316L cardiovascular stents.

    PubMed

    Arslan, Erdem; Iğdil, Mustafa C; Yazici, Hilal; Tamerler, Candan; Bermek, Hakan; Trabzon, Levent

    2008-05-01

    The effect of surface modification of laser-cut 316L cardiovascular stents by low-T plasma nitriding was evaluated in terms of mechanical properties and biocompatibility of the stents. The plasma nitriding was performed at 400, 450 or 500 degrees C using various ratios of nitrogen-hydrogen gas mixtures. The flexibility and radial strength were measured in crimped and expanded state of the stents, respectively. The mechanical properties could be adjusted and improved by plasma nitriding conducted at temperatures lower than 450 degrees C and/or nitrogen content less than 10% in the treatment gas. An osteoblast cell culture model system was utilized to investigate the effect of plasma nitriding of the stents on the biological response towards the stents, using biological criteria such as cell viability, alkaline phosphatase and nitric oxide production. In terms of cell viability and alkaline phosphatase production, the plasma nitriding procedure did not appear to negatively affect the biocompatibility of the 316L steel stents. However, in terms of nitric oxide production that was slightly increased in the presence of the plasma-nitrided stents, an indirect improvement in the biocompatibility could possibly be expected. PMID:17968502

  11. Structure and properties of nitrided surface layer produced on NiTi shape memory alloy by low temperature plasma nitriding

    NASA Astrophysics Data System (ADS)

    Czarnowska, Elżbieta; Borowski, Tomasz; Sowińska, Agnieszka; Lelątko, Józef; Oleksiak, Justyna; Kamiński, Janusz; Tarnowski, Michał; Wierzchoń, Tadeusz

    2015-04-01

    NiTi shape memory alloys are used for bone and cardiological implants. However, on account of the metallosis effect, i.e. the release of the alloy elements into surrounding tissues, they are subjected to various surface treatment processes in order to improve their corrosion resistance and biocompatibility without influencing the required shape memory properties. In this paper, the microstructure, topography and morphology of TiN surface layer on NiTi alloy, and corrosion resistance, both before and after nitriding in low-temperature plasma at 290 °C, are presented. Examinations with the use of the potentiodynamic and electrochemical impedance spectroscopy methods were carried out and show an increase of corrosion resistance in Ringer's solution after glow-discharge nitriding. This surface titanium nitride layer also improved the adhesion of platelets and the proliferation of osteoblasts, which was investigated in in vitro experiments with human cells. Experimental data revealed that nitriding NiTi shape memory alloy under low-temperature plasma improves its properties for bone implant applications.

  12. Low Temperature Plasma Nitriding Of Stainless Steel In N_2/H_2/Ar LFICP Discharges

    NASA Astrophysics Data System (ADS)

    Xu, S.; Luo, W.; Jiang, N.; Ostrikov, K. N.

    2001-10-01

    A low frequency, high density, inductively coupled plasma (LF ICP) source has been developed and used for nitriding of AISI stainless steels. A series of experiments has been conducted in a low temperature (320-400^circC), low pressure N_2/H_2/Ar gas mixture discharges. The results show that the nitriding process is very fast, ~ 45μm/hr for AISI 304 and ~ 90μm/hr for AIS410, even at a low nitriding temperature. After nitriding, the micro hardness of the nitrided layer is increased by a factor of 7 and the free corrosion potential is also improved. The pin-on-disc measurement indicates that the wear resistance improved more than 10 times. The microstructure and composition of the nitrided surface layers characterised using scanning electron microscopy/energy dispersive x-ray diffraction and x-ray diffraction reveal that the nitrided layer has crystalline structure with various phases. The distribution of the nitrogen content varies sharply: high in the nitrided layer and almost zero elsewhere. The content of Cr, however, remains constant over the entire substrate/nitrided layer.

  13. The effect of gas mixture of post-oxidation on structure and corrosion behavior of plasma nitrided AISI 316 stainless steel

    NASA Astrophysics Data System (ADS)

    Karimzadeh, N.; Moghaddam, E. G.; Mirjani, M.; Raeissi, K.

    2013-10-01

    In this research, microstructure and corrosion properties of plasma nitriding and post-oxidation treated AISI 316 austenitic stainless steel have been studied. The plasma nitriding treatment was carried out at 450 °C for 5 h in a D.C. plasma setup with a gas mixture of 25% N2-75% H2 followed by post-oxidation in gas mixtures of O2/H2: 1/3, 1/5, 1/9 and 1/12 for 30 min. The treated samples were characterized by SEM, XRD and roughness testing. Potentiodynamic and cyclic polarization tests were also employed to evaluate the corrosion resistance of the samples. The results showed that plasma nitriding treatment decreases corrosion resistance of the steel substrate. However, post-oxidizing treatment improves both uniform and pitting corrosion resistances of the nitrided specimens. This effect was most pronounced by post-oxidizing at lower O2/H2 ratios due to the development of magnetite as a more dense oxide phase over the modified layer.

  14. Corrosion resistance of zirconium oxynitride coatings deposited via DC unbalanced magnetron sputtering and spray pyrolysis-nitriding

    NASA Astrophysics Data System (ADS)

    Cubillos, G. I.; Bethencourt, M.; Olaya, J. J.

    2015-02-01

    ZrOxNy/ZrO2 thin films were deposited on stainless steel using two different methods: ultrasonic spray pyrolysis-nitriding (SPY-N) and the DC unbalanced magnetron sputtering technique (UBMS). Using the first method, ZrO2 was initially deposited and subsequently nitrided in an anhydrous ammonia atmosphere at 1023 K at atmospheric pressure. For UBMS, the film was deposited in an atmosphere of air/argon with a Φair/ΦAr flow ratio of 3.0. Structural analysis was carried out through X-ray diffraction (XRD), and morphological analysis was done through scanning electron microscopy (SEM) and atomic force microscopy (AFM). Chemical analysis was carried out using X-ray photoelectron spectroscopy (XPS). ZrOxNy rhombohedral polycrystalline film was produced with spray pyrolysis-nitriding, whereas using the UBMS technique, the oxynitride films grew with cubic Zr2ON2 crystalline structures preferentially oriented along the (2 2 2) plane. Upon chemical analysis of the surface, the coatings exhibited spectral lines of Zr3d, O1s, and N1s, characteristic of zirconium oxynitride/zirconia. SEM analysis showed the homogeneity of the films, and AFM showed morphological differences according to the deposition technique of the coatings. Zirconium oxynitride films enhanced the stainless steel's resistance to corrosion using both techniques. The protective efficacy was evaluated using electrochemical techniques based on linear polarization (LP). The results indicated that the layers provide good resistance to corrosion when exposed to chloride-containing media.

  15. Fluorination of polymethylmethaacrylate with tetrafluoroethane using DC glow discharge plasma

    NASA Astrophysics Data System (ADS)

    Guruvenket, S.; Iyer, Ganjigunte R. S.; Shestakova, Larisa; Morgen, Per; Larsen, N. B.; Mohan Rao, G.

    2008-07-01

    Fluorination of polymer surfaces has technological applications in various fields such as microelectronics, biomaterials, textile, packing, etc. In this study PMMA surfaces were fluorinated using DC glow discharge plasma. Tetrafluoroethane was used as the fluorinating agent. On the fluorinated PMMA surface, static water contact angle, surface energy, optical transmittance (UV-vis), XPS and AFM analyses were carried out. After the fluorination PMMA surface becomes hydrophobic with water contact angle of 107° without losing optical transparency. Surface energy of fluorine plasma-treated PMMA decreased from 35 mJ/cm 2 to 21.2 mJ/cm 2. RMS roughness of the fluorinated surface was 4.01 nm and XPS studies revealed the formation of C-CF x and CF 3 groups on the PMMA surface.

  16. The effect of plasma-nitrided titanium surfaces on osteoblastic cell adhesion, proliferation, and differentiation.

    PubMed

    Ferraz, Emanuela P; Sa, Juliana C; de Oliveira, Paulo T; Alves, Clodomiro; Beloti, Marcio M; Rosa, Adalberto L

    2014-04-01

    In this study, we evaluated the effect of new plasma-nitrided Ti surfaces on the progression of osteoblast cultures, including cell adhesion, proliferation and differentiation. Ti surfaces were treated using two plasma-nitriding protocols, hollow cathode for 3 h (HC 3 h) and 1 h (HC 1 h) and planar for 1 h. Untreated Ti surfaces were used as control. Cells derived from human alveolar and rat calvarial bones were cultured on Ti surfaces for periods of up to 14 days and the following parameters were evaluated: cell morphology, adhesion, spreading and proliferation, alkaline phosphatase (ALP) activity, extracellular matrix mineralization, and gene expression of key osteoblast markers. Plasma-nitriding treatments resulted in Ti surfaces with distinct physicochemical characteristics. The cell adhesion and ALP activity were higher on plasma-nitrided Ti surfaces compared with untreated one, whereas cell proliferation and extracellular matrix mineralization were not affected by the treatments. In addition, the plasma-nitrided Ti surfaces increased the ALP, reduced the osteocalcin and did not affect the Runx2 gene expression. We have shown that HC 3 h and planar Ti surfaces slightly favored the osteoblast differentiation process, and then these surfaces should be considered for further investigation using preclinical models. PMID:23625878

  17. Improvement of corrosion resistance of nitrided low alloy steel by plasma post-oxidation

    NASA Astrophysics Data System (ADS)

    Li, Yang; Wang, Liang; Zhang, Dandan; Shen, Lie

    2010-04-01

    Post-oxidizing treatments can be performed to improve the corrosion resistance of nitrided steel samples. In this paper, plasma nitriding treatments were performed at 540 °C for 4 h using ammonia as the working gas, and plasma post-oxidizing treatments were carried out at temperatures ranging from 350 °C to 500 °C for 2 h in oxygen gas. The treated samples were characterized by using optical microscopy, SEM, XRD, and electrochemical polarization. The X-ray analysis revealed the formation of iron-nitride phases of ɛ-Fe 2-3N and γ'-Fe 4N during plasma nitriding and iron oxide phases of hematite (Fe 2O 3) and magnetite (Fe 3O 4) through the post-oxidizing treatment. In particular, it was found that the very thin magnetite layer 0.8-1.5 μm in thickness on top of the compound layer was obtained by plasma post-oxidized at 400 °C and 450 °C. It was also demonstrated that the corrosion characteristics of the nitrided compound layer were further improved by post-oxidation treatment.

  18. Plasma nitriding using high H2 content gas mixtures for a cavitation erosion resistant steel

    NASA Astrophysics Data System (ADS)

    Allenstein, A. N.; Lepienski, C. M.; Buschinelli, A. J. A.; Brunatto, S. F.

    2013-07-01

    Plasma nitriding using high H2 content gas mixtures in CA-6NM martensitic stainless steel was studied in the present work. Nitriding was performed in H2 + N2 gas mixtures for 5, 10 and 20% N2, in volume, at 773 K (500 °C), during 2 h. Changes in the surface morphology and nitrided layer constitution were characterized by SEM, XRD, roughness analysis, and nanoindentation technique. Cavitation erosion behavior of the nitrided samples was also investigated by means of a 20 kHz ultrasonic vibrator. The study was emphasized for the three first cavitation stages (incubation, acceleration, and maximum erosion rate stage) of the cumulative erosion-time curve. Results indicate that the gas mixture nitrogen content strongly influences the phases' formation and its distribution on the nitrided layer. Better cavitation erosion resistance which was attributed to the finer and more homogeneous distribution of the nitrided layer phases was verified for samples treated at 5% N2. Otherwise, worse cavitation erosion behavior for samples nitrided at 20% N2 is supposed to be due to the formation of multiphase compound layer constituted by Fe4N + Fe2-3N + CrN, which can infer residual stress in treated surface.

  19. Sulfide Stress Cracking and Electrochemical Corrosion of Precipitation Hardening Steel After Plasma Oxy-Nitriding

    NASA Astrophysics Data System (ADS)

    Granda-Gutiérrez, E. E.; Díaz-Guillén, J. C.; Díaz-Guillén, J. A.; González, M. A.; García-Vázquez, F.; Muñóz, R.

    2014-11-01

    In this paper, we present the results of a duplex plasma nitriding followed by an oxidizing stage process (which is also referred as oxy-nitriding) on the corrosion behavior of a 17-4PH precipitation hardening stainless steel. The formation of both, expanded martensite (b.c.t. α'N-phase) and chromium oxide (type Cr2O3) in the subsurface of oxy-nitrided samples at specific controlled conditions, leads in a noticeable increasing in the time-to-rupture during the sulfide stress cracking test, in comparison with an untreated reference sample. Oxy-nitriding improves the corrosion performance of the alloy when it is immersed in solutions saturated by sour gas, which extends the application potential of this type of steel in the oil and gas extraction and processing industry. The presence of the oxy-nitrided layer inhibits the corrosion process that occurs in the near-surface region, where hydrogen is liberated after the formation of iron sulfides, which finally produces a fragile fracture by micro-crack propagation; the obtained results suggest that oxy-nitriding slows this process, thus delaying the rupture of the specimen. Moreover, oxy-nitriding produces a hard, sour gas-resistant surface, but do not significantly affect the original chloride ion solution resistance of the material.

  20. Sulfide Stress Cracking and Electrochemical Corrosion of Precipitation Hardening Steel After Plasma Oxy-Nitriding

    NASA Astrophysics Data System (ADS)

    Granda-Gutiérrez, E. E.; Díaz-Guillén, J. C.; Díaz-Guillén, J. A.; González, M. A.; García-Vázquez, F.; Muñóz, R.

    2014-09-01

    In this paper, we present the results of a duplex plasma nitriding followed by an oxidizing stage process (which is also referred as oxy-nitriding) on the corrosion behavior of a 17-4PH precipitation hardening stainless steel. The formation of both, expanded martensite (b.c.t. α'N-phase) and chromium oxide (type Cr2O3) in the subsurface of oxy-nitrided samples at specific controlled conditions, leads in a noticeable increasing in the time-to-rupture during the sulfide stress cracking test, in comparison with an untreated reference sample. Oxy-nitriding improves the corrosion performance of the alloy when it is immersed in solutions saturated by sour gas, which extends the application potential of this type of steel in the oil and gas extraction and processing industry. The presence of the oxy-nitrided layer inhibits the corrosion process that occurs in the near-surface region, where hydrogen is liberated after the formation of iron sulfides, which finally produces a fragile fracture by micro-crack propagation; the obtained results suggest that oxy-nitriding slows this process, thus delaying the rupture of the specimen. Moreover, oxy-nitriding produces a hard, sour gas-resistant surface, but do not significantly affect the original chloride ion solution resistance of the material.

  1. Behavior of incorporated nitrogen in plasma-nitrided silicon oxide formed by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Shinoda, Nao; Itokawa, Hiroshi; Fujitsuka, Ryota; Sekine, Katsuyuki; Onoue, Seiji; Tonotani, Junichi

    2016-04-01

    The behavior of nitrogen (N) atoms in plasma-nitrided silicon oxide (SiO2) formed by chemical vapor deposition (CVD) was characterized by physical analysis and from electrical properties. The changes in the chemical bonding and distribution of N in plasma-nitrided SiO2 were investigated for different subsequent processes. N-Si3, N-Si2O, and N2 are formed in a SiO2 film by plasma nitridation. N2 molecules diffuse out during annealing at temperatures higher than 900 °C. NH species are generated from N2 molecules and H in the SiO2 film with subsequent oxide deposition using O3 as an oxidant. The capacitance-voltage (C-V) curves of metal-oxide-semiconductor (MOS) capacitors are obtained. The negative shift of the C-V curve is caused by the increase in the density of positive fix charge traps in CVD-SiO2 induced by plasma nitridation. The C-V curve of plasma-nitrided SiO2 subjected to annealing shifts to the positive direction and that subjected to the subsequent oxide deposition shifts markedly to the negative direction. It is clarified that the density of positive charge fixed traps in plasma-nitrided SiO2 films decrease because the amount of N2 molecules is decreased by annealing, and that the density of traps increases because NH species are generated and move to the interface between SiO2 and the Si substrate with the subsequent oxide deposition.

  2. Plasma spheroidization of iron powders in a non-transferred DC thermal plasma jet

    SciTech Connect

    Kumar, S. Selvarajan, V

    2008-06-15

    In this paper, the results of plasma spheroidization of iron powders using a DC non-transferred plasma spray torch are presented. The morphology of the processed powders was characterized through scanning electron microscopy (SEM) and optical microscopy (OM). The percentages of spheroidized powders were calculated by the shape factors such as the Irregularity Parameter (IP) and Roundness (RN). A maximum of 83% of spheroidization can be achieved. The spheroidization results are compared with the theoretical estimation and they are found to be in good agreement. The phase composition of the spheroidized powder was analyzed by XRD. The effect of plasma jet temperature and plasma gas flow rate on spheroidization is discussed. At low plasma gas flow rates and at high plasma jet temperatures, the percentage of spheroidization is high.

  3. Construction of a hybrid rf/dc discharge source for dusty plasma studies

    NASA Astrophysics Data System (ADS)

    Krupa, Justin; Williams, Jeremiah

    2014-10-01

    A complex (dusty) plasma is a four-component system composed of ions, electrons, neutral particles and charged microparticles. The presence of the microparticles gives rise to new plasma phenomena at time scales on the order of Hertz. Over the last several years, the Wittenberg University Plasma Laboratory has studied these dusty plasma systems in a dc discharge plasma. In this poster, we present work on a dual rf/dc hybrid discharge system to replace the dc glow discharge system currently in use. Details of the design and use of 3D printing in the construction will be presented. This work supported by National Science Foundation Grant Number PHY-0953595.

  4. Structure and corrosive wear resistance of plasma-nitrided alloy steels in 3% sodium chloride solutions

    SciTech Connect

    Lee, C.K.; Shih, H.C. . Dept. of Materials Science and Engineering)

    1994-11-01

    Type 304 stainless steel (SS), type 410 SS, and type 4140 low-alloy steel were plasma nitrided in a commercial furnace at 560 C for 50 h. Microstructure and the composition of the nitrided layer were analyzed. The resistance to corrosive wear was evaluated by a tribotest in which the specimen was held under potentiostatic control at anodic and cathodic potentials in 3% sodium chloride solution (pH 6.8). Electrochemical polarization measurements were made, and the surface morphology and composition after corrosive wear were examined. Wear rates at cathodic potentials were very low, but significant weight losses were observed as the applied potentials were increased anodically. The coefficient of friction varied in a fashion similar to the wear rate. For the untreated alloys, the magnitude of the wear rate and coefficient of friction decreased as follows: type 4140 alloy > type 41 SS > type 304 SS. For the plasma-nitrided alloys, the ranking was: type 304 SS > type 410 SS. type 4140 alloy. Plasma nitriding was shown to be beneficial to the corrosive wear resistance of type 4140 alloy, but an adverse effect was obtained for types 304 and 410 SS. These findings could be interpreted in terms of the electrochemical polarization characteristics of a static specimen and were strongly related to the subtleties of the nitrided microstructures. The stable chromium nitride (CrN) segregated in the [gamma]-iron (type 304 SS) and [alpha]-Fe (type 41 SS) matrices and resulted in a pitting and spalling type of corrosive wear mechanism. The phases [epsilon]-(Fe, Cr)[sub 2-3]N and [gamma]-(Fe, Cr)[sub 4]N enriched in the surface layer of nitrided type 4140 alloy provided excellent corrosive wear resistance.

  5. Effects of various gas mixtures on plasma nitriding behavior of AISI 5140 steel

    SciTech Connect

    Karakan, Mehmet; Alsaran, Akguen; Celik, Ayhan

    2002-10-15

    AISI 5140 steel was plasma nitrided at various gas mixtures of nitrogen, hydrogen, and argon to investigate the actions of hydrogen and argon on plasma nitriding. The structural and mechanical properties of ion-nitrided AISI 5140 steel have been assessed by evaluating composition of phases, surface hardness, compound layer thickness, and case depth by using X-ray diffraction (XRD), microhardness tests, and scanning electron microscopy (SEM). It was found that the growth of compound layer can be controlled and the diffusion improved when the gas mixture includes H{sub 2} gas. Additionally, it was determined that the amount of Ar in dual gas mixture must be at 20% minimum to obtain distinctive surface hardness and compound layer thickness.

  6. Reactive Plasma Nitriding of AL2O3 Powder in Thermal Spray

    NASA Astrophysics Data System (ADS)

    Shahien, Mohammed; Yamada, Motohiro; Yasui, Toshiaki; Fukumoto, Masahiro

    Among advanced ceramics, aluminum nitride (AlN) had attracted much attention in the field of electrical and structural applications due to its outstanding properties. However, it is difficult to fabricate AlN coating by conventional thermal spray processes directly. Due to the thermal decomposition of feedstock AlN powder during spraying without a stable melting phase (which is required for deposition in thermal spray). Reactive plasma spraying (RPS) has been considered as a promising technology for in-situ formation of AlN thermally sprayed coatings. In this study the possibility of fabrication of AlN coating by reactive plasma nitriding of alumina (Al2O3) powder using N2/H2 plasma was investigated. It was possible to fabricate a cubic-AlN (c-AlN) based coating and the fabricated coating consists of c-AlN, α-Al2O3, Al5O6N and γ-Al2O3. It was difficult to understand the nitriding process from the fabricated coatings. Therefore, the Al2O3 powders were sprayed and collected in water. The microstructure observation of the collected powder and its cross section indicate that the reaction started from the surface. Thus, the sprayed particles were melted and reacted in high temperature reactive plasma and formed aluminum oxynitride which has cubic structure and easily nitride to c-AlN. During the coatings process the particles collide, flatten, and rapidly solidified on a substrate surface. The rapid solidification on the substrate surface due to the high quenching rate of the plasma flame prevents AlN crystal growth to form the hexagonal phase. Therefore, it was possible to fabricate c-AlN/Al2O3 based coatings through reactive plasma nitriding reaction of Al2O3 powder in thermal spray.

  7. Effect of Plasma Nitriding and Nitrocarburizing on HVOF-Sprayed Stainless Steel Coatings

    NASA Astrophysics Data System (ADS)

    Park, Gayoung; Bae, Gyuyeol; Moon, Kyungil; Lee, Changhee

    2013-12-01

    In this work, the effects of plasma nitriding (PN) and nitrocarburizing on HVOF-sprayed stainless steel nitride layers were investigated. 316 (austenitic), 17-4PH (precipitation hardening), and 410 (martensitic) stainless steels were plasma-nitrided and nitrocarburized using a N2 + H2 gas mixture and the gas mixture containing C2H2, respectively, at 550 °C. The results showed that the PN and nitrocarburizing produced a relatively thick nitrided layer consisting of a compound layer and an adjacent nitrogen diffusion layer depending on the crystal structures of the HVOF-sprayed stainless steel coatings. Also, the diffusion depth of nitrogen increased when a small amount of C2H2 (plasma nitrocarburizing process) was added. The PN and nitrocarburizing resulted in not only an increase of the surface hardness, but also improvement of the load bearing capacity of the HVOF-sprayed stainless steel coatings because of the formation of CrN, Fe3N, and Fe4N phases. Also, the plasma-nitrocarburized HVOF-sprayed 410 stainless steel had a superior surface microhardness and load bearing capacity due to the formation of Cr23C6 on the surface.

  8. Plasma chemistry and diagnostic in an Ar-N2-H2 microwave expanding plasma used for nitriding treatments

    NASA Astrophysics Data System (ADS)

    Touimi, S.; Jauberteau, J. L.; Jauberteau, I.; Aubreton, J.

    2010-05-01

    This paper reports on the mass spectrometry analysis performed downstream a microwave discharge in an Ar-N2-H2 gas mixture under nitriding conditions. Investigations are focused on the main simple radicals NH2, NH and N, and on the molecular species NH3 and N2H2 produced. Because of wall desorptions due to catalytic effects, we must develop a specific method taking into account both wall desorption and the dissociative ionization effects in order to correct the mass spectrometer signal intensity. The relative concentrations of the above-mentioned species are studied in various gas mixtures. Correlations are made between the plasma chemistry and the plasma parameters (electron density and energy electron distribution function), measured by means of a Langmuir probe spatially resolved within the plasma expansion. These results show the efficiency of ternary gas mixtures (Ar-N2-H2) in producing electrons and NxHy species used in plasma nitriding processes.

  9. Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

    NASA Astrophysics Data System (ADS)

    Tarala, V. A.; Altakhov, A. S.; Martens, V. Ya; Lisitsyn, S. V.

    2015-11-01

    Aluminum nitride films have been grown by Plasma-Enhanced Atomic Layer Deposition method. It was found that at temperatures of 250 °C and 280 °C increase of the plasma exposure step duration over 6 s, as well as increase of reactor purge step duration over 1 s does not affect the growth rate, however, it affects the microstructure of the films. It was found that crystalline aluminum nitride films deposit with plasma exposure duration over 10 s and the reactor purging over 10 s. When the temperature drops the increase of reactor purge step duration and plasma exposure step duration over 20 s is required for crystalline AlN film growth.

  10. Silicon nitride films deposited with an electron beam created plasma

    NASA Astrophysics Data System (ADS)

    Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

    1984-03-01

    The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

  11. Challenges Upon Reactive Plasma Spray Nitriding: Al Powders and Fabrication of AlN Coatings as a Case Study

    NASA Astrophysics Data System (ADS)

    Shahien, Mohammed; Yamada, Motohiro; Fukumoto, Masahiro

    2016-05-01

    Reactive plasma spraying (RPS) is a promising technology for the in situ formation of several ceramic coatings. The focus of this paper is to summarize the state of our current knowledge about the RPS process and using the nitriding of Al particles and the fabrication of aluminum nitride coatings, as a case study. The aspects and challenges in this process such as the influence of the plasma power, in-flight time, particle size, nitriding mechanism, splat morphology, in-flight particle diagnostics, N2 plasma gas, and the feeding rate on the RPS process are analyzed and discussed.

  12. Challenges Upon Reactive Plasma Spray Nitriding: Al Powders and Fabrication of AlN Coatings as a Case Study

    NASA Astrophysics Data System (ADS)

    Shahien, Mohammed; Yamada, Motohiro; Fukumoto, Masahiro

    2016-06-01

    Reactive plasma spraying (RPS) is a promising technology for the in situ formation of several ceramic coatings. The focus of this paper is to summarize the state of our current knowledge about the RPS process and using the nitriding of Al particles and the fabrication of aluminum nitride coatings, as a case study. The aspects and challenges in this process such as the influence of the plasma power, in-flight time, particle size, nitriding mechanism, splat morphology, in-flight particle diagnostics, N2 plasma gas, and the feeding rate on the RPS process are analyzed and discussed.

  13. Structural and magnetic characterization of plasma ion nitrided layer on 316L stainless steel alloy

    NASA Astrophysics Data System (ADS)

    Öztürk, O.; Okur, S.; Riviere, J. P.

    2009-05-01

    In this study, an FeCrNi alloy (316L stainless steel disc) was nitrided in a low-pressure R.F. plasma at 430 °C for 72 min under a gas mixture of 60% N2-40% H2. Structural, compositional and magnetic properties of the plasma nitrided layer was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and magnetic force microscopy (MFM). The magnetic behaviour of the nitrided layer was also investigated with a vibrating sample magnetometer (VSM). Combined X-ray diffraction, cross-sectional SEM, AFM and MFM, as well as VSM analyses provide strong evidence for the formation of the γN phase, [γN-(Fe, Cr, Ni)], with mainly ferromagnetic characteristics. The uniform nature of the γN layer is clearly demonstrated by the XRD, cross-sectional SEM and AFM analyses. Based on the AFM and SEM data, the thickness of the γN layer is found to be ∼6 μm. According to the MFM and VSM analyses, ferromagnetism in the γN layer is revealed by the observation of stripe domain structures and the hysteresis loops. The cross-sectional MFM results demonstrate the ferromagnetic γN phase distributed across the plasma nitrided layer. The MFM images show variation in the size and form of the magnetic domains from one grain to another.

  14. Mesenchymal stem cell adhesion and spreading on microwave plasma-nitrided titanium alloy.

    PubMed

    Clem, William C; Konovalov, Valery V; Chowdhury, S; Vohra, Yogesh K; Catledge, Shane A; Bellis, Susan L

    2006-02-01

    Improved methods to increase surface hardness of metallic biomedical implants are being developed in an effort to minimize the formation of wear debris particles that cause local pain and inflammation. However, for many implant surface treatments, there is a risk of film delamination due to the mismatch of mechanical properties between the hard surface and the softer underlying metal. In this article, we describe the surface modification of titanium alloy (Ti-6Al-4V), using microwave plasma chemical vapor deposition to induce titanium nitride formation by nitrogen diffusion. The result is a gradual transition from a titanium nitride surface to the bulk titanium alloy, without a sharp interface that could otherwise lead to delamination. We demonstrate that vitronectin adsorption, as well as the adhesion and spreading of human mesenchymal stem cells to plasma-nitrided titanium is equivalent to that of Ti-6Al-4V, while hardness is improved 3- to 4-fold. These in vitro results suggest that the plasma nitriding technique has the potential to reduce wear, and the resulting debris particle release, of biomedical implants without compromising osseointegration; thus, minimizing the possibility of implant loosening over time. PMID:16265649

  15. Mesenchymal stem cell adhesion and spreading on microwave plasma-nitrided titanium alloy

    PubMed Central

    Clem, William C.; Konovalov, Valery V.; Chowdhury, S.; Vohra, Yogesh K.; Catledge, Shane A.; Bellis, Susan L.

    2008-01-01

    Improved methods to increase surface hardness of metallic biomedical implants are being developed in an effort to minimize the formation of wear debris particles that cause local pain and inflammation. However, for many implant surface treatments, there is a risk of film delamination due to the mismatch of mechanical properties between the hard surface and the softer underlying metal. In this article, we describe the surface modification of titanium alloy (Ti-6Al-4V), using microwave plasma chemical vapor deposition to induce titanium nitride formation by nitrogen diffusion. The result is a gradual transition from a titanium nitride surface to the bulk titanium alloy, without a sharp interface that could otherwise lead to delamination. We demonstrate that vitronectin adsorption, as well as the adhesion and spreading of human mesenchymal stem cells to plasma-nitrided titanium is equivalent to that of Ti-6Al-4V, while hardness is improved 3- to 4-fold. These in vitro results suggest that the plasma nitriding technique has the potential to reduce wear, and the resulting debris particle release, of biomedical implants without compromising osseointegration; thus, minimizing the possibility of implant loosening over time. PMID:16265649

  16. Deposition of titanium nitride and hydroxyapatite-based biocompatible composite by reactive plasma spraying

    NASA Astrophysics Data System (ADS)

    Roşu, Radu Alexandru; Şerban, Viorel-Aurel; Bucur, Alexandra Ioana; Dragoş, Uţu

    2012-02-01

    Titanium nitride is a bioceramic material successfully used for covering medical implants due to the high hardness meaning good wear resistance. Hydroxyapatite is a bioactive ceramic that contributes to the restoration of bone tissue, which together with titanium nitride may contribute to obtaining a superior composite in terms of mechanical and bone tissue interaction matters. The paper presents the experimental results in obtaining composite layers of titanium nitride and hydroxyapatite by reactive plasma spraying in ambient atmosphere. X-ray diffraction analysis shows that in both cases of powders mixtures used (10% HA + 90% Ti; 25% HA + 75% Ti), hydroxyapatite decomposition occurred; in variant 1 the decomposition is higher compared with the second variant. Microstructure of the deposited layers was investigated using scanning electron microscope, the surfaces presenting a lamellar morphology without defects such as cracks or microcracks. Surface roughness values obtained vary as function of the spraying distance, presenting higher values at lower thermal spraying distances.

  17. Growth of cubic boron nitride on diamond particles by microwave plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Saitoh, H.; Yarbrough, W. A.

    1991-06-01

    The nucleation and growth of cubic boron nitride (c-BN) onto diamond powder using solid NaBH4 in low pressure gas mixtures of NH3 and H2 by microwave plasma enhanced chemical vapor deposition has been studied. Boron nitride was deposited on submicron diamond seed crystals scattered on (100) silicon single crystal wafers and evidence was found for the formation of the cubic phase. Diamond powder surfaces appear to preferentially nucleate c-BN. In addition, it was found that the ratio of c-BN to turbostratic structure boron nitride (t-BN) deposited increases with decreasing NH3 concentration in H2. It is suggested that this may be due to an increased etching rate for t-BN by atomic hydrogen whose partial pressure may vary with NH3 concentration.

  18. Effects of Electric Discharge Plasma Treatment on the Thermal Conductivity of Polymer-Metal Nitride/Carbide Composites

    NASA Astrophysics Data System (ADS)

    Parali, Levent; Kurbanov, Mirza A.; Bayramov, Azad A.; Tatardar, Farida N.; Sultanakhmedova, Ramazanova I.; Xanlar, Huseynova Gulnara

    2015-11-01

    High-density polymer composites with semiconductor or dielectric fillers such as aluminum nitride (AIN), aluminum oxide (Al2O3), titanium carbide (TiC), titanium nitride (TiN), boron nitride (BN), silicon nitride (Si3N4), and titanium carbonitride (TiCN) were prepared by the hot pressing method. Each powder phase of the composites was exposed to an electric discharge plasma process before composite formation. The effects of the electric discharge plasma process and the filler content (volume fraction) on the thermal conductivity, volt-ampere characteristics, thermally stimulated depolarization current, as well as electrical and mechanical strength were investigated. The results of the study indicate that, with increasing filler volume fraction, the thermal conductivity of the samples also increased. Furthermore, the thermal conductivity, and electrophysical and mechanical properties of the high-density polyethylene + 70% BN composite modified using the electric discharge plasma showed improvement when compared with that without electric discharge plasma treatment.

  19. Some Temperature Effects on AISI-304 Nitriding in an Inductively Coupled RF Plasma

    SciTech Connect

    Valencia-Alvarado, R.; Barocio, S. R.; Mercado-Cabrera, A.; Pena-Eguiluz, R.; Munoz-Castro, A. E.; Piedad-Beneitez, A. de la; Rosa-Vazquez, J. de la; Lopez-Callejas, R.; Godoy-Cabrera, O. G.

    2006-12-04

    Some recent results obtained from nitriding AISI 304 stainless steel samples, 1.2 cm in diameter and 0.5 cm thick are reported here in the case of an 85% hydrogen and 15% nitrogen mixture work gas. The process was carried out from 300 to 400 W for (13.56 MHz) inductively coupled plasma within a 60 cm long pyrex glass tube 3.5 cm in diameter where the samples were biased up to -300 V with respect to earth. The resulting hardness appears to be a function of the substrate temperature which varied from 200 deg. C at a 0 V bias to 550 deg. C at -300 V. The plasma density at 400 W reached 3x1010 cm-3 with a 4 eV electron temperature. Prior to nitriding, all the samples were polished with 0.05 {mu}m diamond paste, leading to a 30 nm average roughness (Ra). After nitriding at -300 V, the Ra rose until {approx}400 nm while hardness values of 1500 HV under 300 g loads were measured. X ray diffraction indicates that the extended phase amplitude ({gamma}N), Fe and Cr nitride depends on the substrate temperature.

  20. Fabrication of Aluminum Nitride Coatings by Reactive Plasma Spraying and Evaluation of Its Property

    NASA Astrophysics Data System (ADS)

    Yamada, Motohiro; Lee, Chaechul; Yasui, Toshiaki; Fukumoto, Masahiro; Takahashi, Koyata

    Aluminum nitride (AlN) has excellent properties such as high corrosion resistance, hardness and thermal conductivity. In this study, AlN coatings were fabricated by reactive plasma spraying by using Al-AlN mixed powder for feedstock. The optimal mixing ratio of Al-AlN particles and spray conditions were investigated. Al-AlN particles were injected into Ar/N2 plasma and were deposited onto graphite substrate. It was possible to fabricate the coatings using Al-10˜40 wt.%AlN powders for feedstock. Especially, using Al-20 wt.%AlN and Al-30 wt.%AlN powders enabled to fabricate dense coatings which consisted of almost completely AlN phase. The nitride phase concentration in the coatings was controlled by RF power and N2 gas flow rate in the plasma gas. Furthermore, it became clear that the hardness of the coatings depended on the nitride concentration in the coatings. The thermal conductivity of the coating was achieved 71.2 (W/m•K). Therefore, it was possible to fabricate AlN based coatings with high thermal conductivity by reactive plasma spraying by using Al-AlN mixed powder.

  1. Plasma surface interaction in hot filament cathode arc discharge used to nitride steel substrates

    NASA Astrophysics Data System (ADS)

    Dahiya, R. P.; Singh, O.; Aggarwal, V.; Malik, H. K.; Kumari, Nisha

    2012-10-01

    Plasma-assisted nitriding process is a well developed technique for increasing the surface hardness. The process is energy efficient, environment friendly and versatile to treat samples of various shapes and sizes. Though the use of this process in industry is established, there are several scientific questions in the basic understanding of the migration of ions, electrons and radicals and plasma surface interaction. We have studied these processes in an experimental system developed with hot cathode arc discharge plasma. A mixture of nitrogen and hydrogen is utilized for plasma generation. Negatively biased steel substrate is nitrided in this plasma. The hot cathode arc discharge plasma source is utilized to independently monitor and optimise the plasma and the work piece parameters. Substrate bias and temperature, which are the important parameters for achieving the desirable surface hardness, are regulated. Hardness depth profile and nitrogen content in the hardened sample are also measured. Transport and diffusion of ions, electrons, radicals and neutrals are considered to explain the results.

  2. The plasma dynamic synthesis of aluminum nitride in system with gaseous and solid precursors

    NASA Astrophysics Data System (ADS)

    Shanenkov, I.; Sivkov, A.; Ivashutenko, A.; Shanenkova, Yu

    2015-10-01

    Aluminum nitride is widely-used material for semiconductor devices and ceramics production. Despite the large number of known ways to obtain AlN powder, the problem of synthesizing high-purity and nanosized product is still urgent. This paper shows results on plasma dynamic synthesis of aluminum nitride using system based coaxial magneto plasma accelerator. The influence of using gaseous or solid precursors on such characteristics of the final product as phase content and particle size distribution was investigated. According to X- Ray diffractometry AlN phase content is increased in the case of use of solid nitrogen- containing precursor (melamine) in comparison with the use of gaseous nitrogen. The particle sizes distribution histograms are built in accordance with the data of bright-field TEM-images and shown in this paper. The most of particles are less than 100 nm in both experiment but there are some differences, depended on the precursor type, that are also described.

  3. TEM studies of plasma nitrided austenitic stainless steel.

    PubMed

    Stróz, D; Psoda, M

    2010-03-01

    Cross-sectional transmission electron microscopy and X-ray phase analysis were used to study the structure of a layer formed during nitriding the AISI 316L stainless steel at temperature 440 degrees C. It was found that the applied treatment led to the formation of 6-microm-thick layer of the S-phase. There is no evidence of CrN precipitation. The X-ray diffraction experiments proved that the occurred austenite lattice expansion - due to nitrogen atoms - depended on the crystallographic direction. The cross-sectional transmission electron microscopy studies showed that the layer consisted of a single cubic phase that contained a lot of defects such as dislocations, stacking faults, slip bands and twins. The high-resolution electron microscopy observations were applied to study the defect formation due to the nitriding process. It was shown that the presence of great number of stacking faults leads to formation of nanotwins. Weak, forbidden {100} reflections were still another characteristic feature of the S-phase. These were not detected in the X-ray spectra of the phase. Basing on the high-resolution electron microscopy studies it can be suggested that the short-range ordering of the nitrogen atoms in the octahedral sites inside the f.c.c. matrix lattice takes place and gives rise to appearance of these spots. It is suggested that the cubic lattice undergoes not only expansion but also slight rombohedral distortion that explains differences in the lattice expansion for different crystallographic directions. PMID:20500370

  4. Plasma-enhanced CVD silicon nitride antireflection coatings for solar cells

    NASA Technical Reports Server (NTRS)

    Johnson, C. C.; Wydeven, T.; Donohoe, K.

    1983-01-01

    Multilayer plasma-enhanced chemical vapor deposition (PECVD) silicon nitride antireflection coatings were deposited on space quality silicon solar cells. Preliminary experiments indicated that multilayer coatings decreased the total reflectance of polished silicon from 35 percent to less than 3 percent over the spectral range 0.4-1.0 micron. The solar cell energy conversion efficiency was increased from an average of 8.84 percent to an average of 12.63 percent.

  5. Effect of gas composition on corrosion behavior and growth of apatite on plasma nitrided titanium alloy Beta-21S

    NASA Astrophysics Data System (ADS)

    Mohan, L.; Anandan, C.

    2013-03-01

    Titanium alloy beta 21S with composition Ti-15Mo-3Nb-3Al-0.2Si was plasma nitrided using inductively coupled RF Plasma with 100% N2 and 80% N2-20% H2 at 800 °C for 4 h. XRD and micro Raman studies show the formation of titanium nitrides. Potentiodynamic polarization studies in Hank's solution show the corrosion resistance of the 80-20% (N2-H2) treated samples to be better than the 100% N2 treated samples. However, untreated samples show better corrosion resistance than the treated samples. Electrochemical impedance spectroscopy (EIS) studies show higher charge transfer resistance and lower double layer capacitance for the substrate compared to the nitrided samples. FESEM images of samples immersed in SBF show that growth of apatite is more and the size of deposits are larger on nitrided samples, especially on those nitrided with hydrogen dilution, as compared to that on the untreated substrate. EDS results show a decrease in nitrogen content and increase in oxygen content after corrosion experiments. XPS spectra from the nitrided and corrosion tested samples show the presence of oxide, nitride and oxynitride on the surface and after corrosion studies the samples are covered with oxide. Nitrided samples immersed in Hank's solution for one day show higher amount of calcium, phosphorous and oxygen in hydroxide form than the substrate.

  6. High-Density Plasma Etching of Group-III Nitride Films for Device Application

    SciTech Connect

    Baca, A.G.; Crawford, M.H.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-02-17

    As III-V nitride device structures become more complicated and design rules shrink, well-controlled etch processes are necessary. Due to limited wet chemical etch results for the group-III nitrides, a significant amount of effort has been devoted to the development of dry etch processing. Dry etch development was initially focused on mesa structures where high etch rates, anisotropic profiles, smooth sidewalls, and equi-rate etching of dissimilar materials were required. For example, commercially available LEDs and laser facets for GaN-based laser diodes have been patterned using reactive ion etching (RIE). With the recent interest in high power, high temperature electronic devices, etch characteristics may also require smooth surface morphology, low plasma-induced damage, and selective etching of one layer over another. The principal criteria for any plasma etch process is its utility in the fabrication of a device. In this study, we will report plasma etch results for the group-III nitrides and their application to device structures.

  7. Structure and properties of commercially pure titanium nitrided in the plasma of a low-pressure gas discharge produced by a PINK plasma generator

    NASA Astrophysics Data System (ADS)

    Ivanov, Yu F.; Akhmadeev, Yu H.; Lopatin, I. V.; Petrikova, E. A.; Krysina, V.; Koval, N. N.

    2015-11-01

    The paper analyzes the surface structure and properties of commercially pure VT1-0 titanium nitrided in the plasma of a low-pressure gas discharge produced by a PINK plasma generator. The analysis demonstrates that the friction coefficient of the nitrided material decreases more than four times and its wear resistance and microhardness increases more than eight and three times, respectively. The physical mechanisms responsible for the enhancement of strength and tribological properties of the material are discussed.

  8. Dynamics of runaway tails with time-dependent sub-Dreicer dc fields in magnetized plasmas

    NASA Technical Reports Server (NTRS)

    Moghaddam-Taaheri, E.; Vlahos, L.

    1987-01-01

    The evolution of runaway tails driven by sub-Dreicer time-dependent dc fields in a magnetized plasma are studied numerically using a quasi-linear code based on the Ritz-Galerkin method and finite elements. It is found that the runaway tail maintained a negative slope during the dc field increase. Depending on the values of the dc electric field at t = 0 and the electron gyrofrequency to the plasma frequency ratio the runaway tail became unstable to the anomalous Doppler resonance or remained stable before the saturation of the dc field at some maximum value. The systems that remained stable during this stage became unstable to the anomalous Doppler or the Cerenkov resonances when the dc field was kept at the saturation level or decreased. Once the instability is triggered, the runaway tail is isotropized.

  9. Dynamics of runaway tails with time-dependent sub-Dreicer dc fields in magnetized plasmas

    SciTech Connect

    Moghaddam-Taaheri, E.; Vlahos, L.

    1987-10-01

    The evolution of runaway tails driven by sub-Dreicer time-dependent dc fields in a magnetized plasma are studied numerically using a quasilinear code based on the Ritz--Galerkin method and finite elements. It is found that the runaway tail maintained a negative slope during the dc field increase. Depending on the values of the dc electric field at t = 0 and the electron gyrofrequency to the plasma frequency ratio the runaway tail became unstable to the anomalous Doppler resonance or remained stable before the saturation of the dc field at some maximum value. The systems that remained stable during this stage became unstable to the anomalous Doppler or the C-hacekerenkov resonances when the dc field was kept at the saturation level or decreased. Once the instability is triggered, the runaway tail is isotropized.

  10. Effect of pulsed plasma nitriding on mechanical and tribological performance of Ck45 steel.

    PubMed

    Rastkar, A R; Kiani, A; Alvand, F; Shokri, B; Amirzadeh, M

    2011-06-01

    We studied the mechanical properties and wear performance of AISI 1045 (Ck45) carbon steel under the influence of pulsed plasma nitriding. The treatments were performed at temperatures of 500 and 550 degrees C in N2:H2 gas ratios of 1:3 and 3:1 and the working pressure of 10 mbar for 1 to 4 hours. Samples were examined by X-ray diffraction, optical, electron and atomic force microscopy, microhardness tests, roughness measurements and wear tests. Nitride layers were mainly composed of epsilon-(Fe2-3N) or gamma'-(Fe4N) depending on the gas ratio and/or temperature and time. When the nitriding time is increased, the composition of the compound layer varies from monophase gamma'-(Fe4N) to the two phase of epsilon-(Fe2-3N) and gamma'-(Fe4N). The highest thickness and hardness of the layers were obtained at 550 degrees C in the N2:H2 gas ratios of 3:1 for 4 h. The topographical evolution and surface roughness of the samples showed that all the roughness parameters increase with increasing the temperature. The friction coefficient of all samples was higher than that of untreated material. Wear performance of all nitrided samples was significantly better than that of untreated material. PMID:21770190

  11. Influence of chromium content on corrosion of plasma-nitrided steels

    SciTech Connect

    Venkatesan, K.; Subramanian, C.; Green, L.K.; Strafford, K.N.

    1997-07-01

    Commercial steels with varying chromium contents were plasma nitrided for 25 h in a 70% nitrogen + 30% hydrogen gas atmosphere at 520 C under a pressure of 670 Pa. Steels tested included AISI types 4140, with 1% Cr (UNS G41400); H-13, with 5% Cr (UNS T20813); D-2, with 12% Cr (UNS T30402); and 431, with 16% Cr (UNS S43100). Surface layers obtained were characterized using optical microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and scanning electron microscopy with energy dispersive x-ray spectroscopy. Potentiodynamic polarization curves were obtained at room temperature (RT) on samples immersed in an aerated 0.05 M sodium sulfate solution of pH 3.0. Polarization tests were repeated at various depths beneath the surface after grinding successively with abrasives and finishing with 3-{micro}m diamond paste. Potential-vs-time graphs were recorded. Nitrided steels with up to and including 12% Cr showed an increase in corrosion resistance, whereas a decrease was observed for the 16% Cr steel compared to untreated samples. The nitrogen diffusion zones in all the steels studied exhibited reduced corrosion resistance compared to both the nitrided surface and to untreated specimens. Observations were discussed in light of the passivation theory. The role of chromium in nitriding was found to be mainly in hardness enhancement rather than improvement of corrosion resistance.

  12. Reactive spark plasma sintering (SPS) of nitride reinforced titanium alloy composites

    SciTech Connect

    Borkar, Tushar; Nag, Soumya; Ren, Yang; Tiley, Jaimie; Banerjee, Rajarshi

    2014-12-25

    Coupled in situ alloying and nitridation of titanium–vanadium alloys, has been achieved by introducing reactive nitrogen gas during the spark plasma sintering (SPS) of blended titanium and vanadium elemental powders, leading to a new class of nitride reinforced titanium alloy composites. The resulting microstructure includes precipitates of the d-TiN phase with the NaCl structure, equiaxed (or globular) precipitates of a nitrogen enriched hcp a(Ti,N) phase with a c/a ratio more than what is expected for pure hcp Ti, and fine scale plate-shaped precipitates of hcp a-Ti, distributed within a bcc b matrix. During SPS processing, the d-TiN phase appears to form at a temperature of 1400 C, while only hcp a(Ti,N) and a-Ti phases form at lower processing temperatures. Consequently, the highest microhardness is exhibited by the composite processed at 1400 C while those processed at 1300 C or below exhibit lower values. Processing at temperatures below 1300 C, resulted in an incomplete alloying of the blend of titanium and vanadium powders. These d-TiN precipitates act as heterogeneous nucleation sites for the a(Ti,N) precipitates that appear to engulf and exhibit an orientation relationship with the nitride phase at the center. Furthermore, fine scale a-Ti plates are precipitated within the nitride precipitates, presumably resulting from the retrograde solubility of nitrogen in titanium.

  13. DC Plasma Synthesis of Vertically Aligned Carbon Nanofibers for Biointerfacing

    NASA Astrophysics Data System (ADS)

    Pearce, Ryan Christopher

    Vertically aligned carbon nanofibers (VACNFs) are a class of materials whose nanoscale dimensions and physical properties makes them uniquely suitable as functional elements in many applications for biodetection and biointerfacing on a cellular level. Control of VACNF synthesis by catalytic plasma enhanced chemical vapor deposition (PECVD) presents many challenges in integration into devices and structures designed for biointerfacing, such as transparent or flexible substrates. This dissertation addresses ways to overcome many of these issues in addition to deepening the fundamental understanding of nano-synthesis in catalytic PECVD. First, a survey of the field of VACNF synthesis and biointerfacing is presented, identifying the present challenges and greatest experimental applications. It is followed by experimental observations that elucidate the underlying mechanism to fiber alignment during synthesis, a critical step for deterministic control of fiber growth. Using a grid of electrodes patterned by photolithography on an insulating substrate, it was found that the alignment of the fibers is controlled by the anisotropic etching provided by ions during dc-PECVD synthesis. The VACNFs that have been utilized for many cellular interfacing experiments have unique mechanical and fluorescent properties due to a SiNx coating. The mechanism for SiNx deposition to VACNF sidewalls during synthesis is explored in addition to a detailed study of the optical properties of the coating. To explain the optical properties of this coating it is proposed that the source of photoluminescence for the SiNx coated VACNFs is quantum confinement effects due to the presence of silicon nanoclusters embedded in a Si3N4 matrix. These luminescent fibers have proven useful as registry markers in cell impalefection studies. To realize VACNF arrays used as an inflatable angioplasty balloon with embedded fibers to deliver drugs across the blood-brain barrier, a method for transferring fibers to

  14. Rf-plasma synthesis of nanosize silicon carbide and nitride. Final report

    SciTech Connect

    Buss, R.J.

    1997-02-01

    A pulsed rf plasma technique is capable of generating ceramic particles of 10 manometer dimension. Experiments using silane/ammonia and trimethylchlorosilane/hydrogen gas mixtures show that both silicon nitride and silicon carbide powders can be synthesized with control of the average particle diameter from 7 to 200 nm. Large size dispersion and much agglomeration appear characteristic of the method, in contrast to results reported by another research group. The as produced powders have a high hydrogen content and are air and moisture sensitive. Post-plasma treatment in a controlled atmosphere at elevated temperature (800{degrees}C) eliminates the hydrogen and stabilizes the powder with respect to oxidation or hydrolysis.

  15. Cubic-BN-Like Structure of B-C-N Films Synthesized by Plasma Source Ion Nitriding

    NASA Astrophysics Data System (ADS)

    Lei, Ming-kai; Yuan, Li-jiang; Zhang, Zhong-lin; Ma, Teng-cai

    1999-01-01

    Plasma source ion nitriding has emerged as a low-temperature, low-pressure nitriding approach for implanting nitrogen ions and then diffusing them into bulk materials. The ion-plating B-C films were nitrided to synthesize B-C-N films at a nitriding temperature from 300 to 500° C. The x-ray photoelectron spectroscopy and diffuse reflectance Fourier transform infrared spectra analyses showed that the amorphous B-C-N films synthesized at 500° C are composed mainly of cubic-BN-like and hexagonal-BN-like plain microdomains. The higher nitriding temperature contributes to the formation of cubic-BN-like B-C-N structure in the B-C-N films.

  16. Melting and spheroidization of hexagonal boron nitride in a microwave-powered, atmospheric pressure nitrogen plasma `

    SciTech Connect

    Gleiman, S. S.; Phillips, J.

    2001-01-01

    We have developed a method for producing spherically-shaped, hexagonal phase boron nitride (hBN) particles of controlled diameter in the 10-100 micron size range. Specifically, platelet-shaped hBN particles are passed as an aerosol through a microwave-generated, atmospheric pressure, nitrogen plasma. In the plasma, agglomerates formed by collisions between input hBN particles, melt and forms spheres. We postulate that this unprecedented process takes place in the unique environment of a plasma containing a high N-atom concentration, because in such an environment the decomposition temperature can be raised above the melting temperature. Indeed, given the following relationship [1]: BN{sub (condensed)} {leftrightarrow} B{sub (gas)} + N{sub (gas)}. Standard equilibrium thermodynamics indicate that the decomposition temperature of hBN is increased in the presence of high concentrations of N atoms. We postulate that in our plasma system the N atom concentration is high enough to raise the decomposition temperature above the (undetermined) melting temperature. Keywords Microwave plasma, boron nitride, melting, spherical, thermodynamics, integrated circuit package.

  17. Manual modification and plasma exposure of boron nitride ceramic to study Hall effect thruster plasma channel material erosion

    NASA Astrophysics Data System (ADS)

    Satonik, Alexander J.

    Worn Hall effect thrusters (HET) show a variety of unique microstructures and elemental compositions in the boron nitride thruster channel walls. Worn thruster channels are typically created by running test thrusters in vacuum chambers for hundreds of hours. Studies were undertaken to manually modify samples of boron nitride without the use of a hall effect thruster. Samples were manually abraded with an abrasive blaster and sandpaper, in addition to a vacuum heater. Some of these samples were further exposed to a xenon plasma in a magnetron sputter device. Sandpaper and abrasive blaster tests were used to modify surface roughness values of the samples from 10,000 A to 150,000 A, matching worn thruster values. Vacuum heat treatments were performed on samples. These treatments showed the ability to modify chemical compositions of boron nitride samples, but not in a manner matching changes seen in worn thruster channels. Plasma erosion rate was shown to depend on the grade of the BN ceramic and the preparation of the surface prior to plasma exposure. Abraded samples were shown to erode 43% more than their pristine counterparts. Unique surface features and elemental compositions on the worn thruster channel samples were overwritten by new surface features on the ceramic grains. The microscope images of the ceramic surface show that the magnetron plasma source rounded the edges of the ceramic grains to closely match the worn HET surface. This effect was not as pronounced in studies of ion beam bombardment of the surface and appears to be a result of the quasi-neutral plasma environment.

  18. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor.

    PubMed

    Park, Jae-Min; Jang, Se Jin; Yusup, Luchana L; Lee, Won-Jun; Lee, Sang-Ick

    2016-08-17

    We report the plasma-enhanced atomic layer deposition (PEALD) of silicon nitride thin film using a silylamine compound as the silicon precursor. A series of silylamine compounds were designed by replacing SiH3 groups in trisilylamine by dimethylaminomethylsilyl or trimethylsilyl groups to obtain sufficient thermal stability. The silylamine compounds were synthesized through redistribution, amino-substitution, lithiation, and silylation reactions. Among them, bis(dimethylaminomethylsilyl)trimethylsilyl amine (C9H29N3Si3, DTDN2-H2) was selected as the silicon precursor because of the lowest bond dissociation energy and sufficient vapor pressures. The energies for adsorption and reaction of DTDN2-H2 with the silicon nitride surface were also calculated by density functional theory. PEALD silicon nitride thin films were prepared using DTDN2-H2 and N2 plasma. The PEALD process window was between 250 and 400 °C with a growth rate of 0.36 Å/cycle. The best film quality was obtained at 400 °C with a RF power of 100 W. The PEALD film prepared showed good bottom and sidewall coverages of ∼80% and ∼73%, respectively, on a trench-patterned wafer with an aspect ratio of 5.5. PMID:27447839

  19. Influence of Plasma Nitriding on the Microstructure, Wear, and Corrosion Properties of Quenched 30CrMnSiA Steel

    NASA Astrophysics Data System (ADS)

    Tang, L. N.; Yan, M. F.

    2013-07-01

    The oil-quenched 30CrMnSiA steel specimens have been pulse plasma-nitrided for 4 h using a constant 25% N2-75% H2 gaseous mixture. Different nitriding temperatures varying from 400 to 560 °C have been used to investigate the effects of treatment temperature on the microstructure, microhardness, wear, and corrosion resistances of the surface layers of the nitrided specimens. The results show that significant surface-hardened layer consisting of compound and diffusion layers can be obtained when the oil-quenched steel (α'-Fe) are plasma-nitrided at these experimental conditions, and the compound layer mainly consists of ɛ-Fe2-3N and γ'-Fe4N phases. Lower temperature (400-500 °C) nitriding favors the formation of ɛ-Fe2-3N phase in surface layer, while a monophase γ'-Fe4N layer can be obtained when the nitriding is carried out at a higher temperature (560 °C). With increasing nitriding temperature, the compound layer thickness increases firstly from 2-3 μm (400 °C) to 8 μm (500 °C) and then decreases to 4.5 μm (560 °C). The surface roughness increases remarkably, and both the surface and inner microhardness of the nitrided samples decrease as increasing the temperature. The compact compound layers with more ɛ-Fe2-3N phase can be obtained at lower temperature and have much higher wear and corrosion resistances than those compound layers formed employing 500-560 °C plasma nitriding.

  20. Fabrication of boron nitride nanotube-gold nanoparticle hybrids using pulsed plasma in liquid.

    PubMed

    Ponraj, Sri balaji; Chen, Zhiqiang; Li, Lu Hua; Shankaranarayanan, Jayanth Suryanarayanan; Rajmohan, Gayathri Devi; du Plessis, Johan; Sinclair, Andrew J; Chen, Ying; Wang, Xungai; Kanwar, Jagat R; Dai, Xiujuan J

    2014-09-01

    Plasma, generated in liquid at atmospheric pressure by a nanosecond pulsed voltage, was used to fabricate hybrid structures from boron nitride nanotubes and gold nanoparticles in deionized water. The pH was greatly reduced, conductivity was significantly increased, and concentrations of reactive oxygen and nitrogen species in the water were increased by the plasma treatment. The treatment reduced the length of the nanotubes, giving more individual cuplike structures, and introduced functional groups onto the surface. Gold nanoparticles were successively assembled onto the functionalized surfaces. The reactive species from the liquid plasma along with the nanosecond pulsed electric field seem to play a role in the shortening and functionalization of the nanotubes and the assembly of gold nanoparticles. The potential for targeted drug delivery was tested in a preliminary investigation using doxorubicin-loaded plasma-treated nanotubes which were effective at killing ∼99% of prostate cancer cells. PMID:25127006

  1. Nitriding of a tool steel with an electron-beam-excited plasma

    SciTech Connect

    Shoyama, H.; Hishida, T.; Hara, T.; Dake, Y.; Mori, T.; Nagai, H.; Hori, M.; Goto, T.

    2006-11-15

    Nitriding of a tool steel was carried out with an electron-beam-excited plasma (EBEP). EBEP is sustained with energetic electron beams over the pressure range of 10{sup -3}-10{sup 1} Pa by electron-impact ionization. Samples whose temperatures were controlled by electric radiant heater were exposed to EBEP. A nitrided layer of 100 {mu}m and a surface hardness of 1000 HV(0.1) were achieved for tool steel SKD61 (JIS) at 800 K and a treatment time of 3 h. In order to measure the density of nitrogen atoms in EBEP, a vacuum ultraviolet absorption spectroscopy system was used. It was found that the density of nitrogen atoms increased from 10{sup 11} to 10{sup 12} cm{sup -3} linearly with an increase of electron beam current from 2 to 20 A.

  2. Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications

    NASA Technical Reports Server (NTRS)

    Triplett, G. E., Jr.; Durbin, S. M.

    2004-01-01

    The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.

  3. High-Temperature Thermodynamic Investigation of Nano-Dispersed Nitrides Obtained in Thermal Plasma

    NASA Astrophysics Data System (ADS)

    Georgieva, M.; Vissokov, G. Grancharov, IV; Brakalov, L.

    2007-04-01

    The nitrides of transient metals have a high hardness, thermal stability, remarkable wear resistance in aggressive chemical mediums, melted metals and alloys, high corrosion resistance, and low coefficient of electric resistance. Under the conditions of low-temperature argon plasma (LTP), thermodynamic investigations were conducted in the process of obtaining of AlN, TiN and Si3N4 in a temperature range of 1000 K to 6000 K. To investigate the thermodynamic possibility of obtaining nitrides, a computer model was used which provided the equilibrium composition of gaseous and solid phases at different temperatures. The conditions for chemical equilibrium of the system were based on the minimization of Gibbs' energy.

  4. Formation of BN and AlBN during nitridation of sapphire using RF plasma sources[Radiofrequency

    SciTech Connect

    Ptak, A.J.; Ziemer, K.S.; Holbert, L.J.; Stinespring, C.D.; Myers, T.H.

    2000-07-01

    Evidence is presented that nitrogen plasma sources utilizing a pyrolytic boron nitride liner may be a significant source of B contamination during growth and processing. Auger electron spectroscopy analysis performed during nitridation of sapphire indicate the resulting layers contain a significant amount of BN. The formation of Al{sub 1{minus}x}B{sub x}N would explain the observation of a lattice constant several percent smaller than AlN as measured by reflection high-energy electron diffraction. The presence of cubic inclusions in layers grown on such a surface may be related to the segregation of BN during the nitridation into its cubic phase.

  5. The Role of Activated Nitrogen Species on Double-folded Screen Nitriding Process

    NASA Astrophysics Data System (ADS)

    Kim, Sanggweon; Lee, Jaehoon; Saito, Nagahiro; Takai, Osamu

    2013-03-01

    As clean and energy saving surface hardening technology, plasma nitriding techniques have been evolved with object of higher performance in the last decades. Even though the diffusion of nitrogen inward to steel is occurred at the final step, solid diffusion from surface, energy transition from gas molecule of nitrogen to atomic or an activated state have many different steps depending on the plasma conditions, parameters and the design of each equipment. And this study made comparative on nitrogen sources transfer with conventional DC plasma nitriding and novel nitriding process using plasma diagnosis and metallurgical observation. With different vacuum pressure, gas ratio and new designed electrode (double-folded screen cathode electrode), it showed a different behavior of DC plasma nitriding including the nano-sized nitride on the outer surface of specimen due to nitrogen source of determining plasma species. In this study, plasma species was able to identify with optical emission spectroscopy (OES) studies. From these observations, we could understand better role of ions or neutral nitrogen species, like neutral nitrogen (N), N2+ and NHx radicals in plasma nitriding process with different parameters. And cutting layers of nitride specimen were showed the results due to a different species gas flow ratio or plasma conditions.

  6. Investigation on Plasma Jet Flow Phenomena During DC Air Arc Motion in Bridge-Type Contacts

    NASA Astrophysics Data System (ADS)

    Zhai, Guofu; Bo, Kai; Chen, Mo; Zhou, Xue; Qiao, Xinlei

    2016-05-01

    Arc plasma jet flow in the air was investigated under a bridge-type contacts in a DC 270 V resistive circuit. We characterized the arc plasma jet flow appearance at different currents by using high-speed photography, and two polished contacts were used to search for the relationship between roughness and plasma jet flow. Then, to make the nature of arc plasma jet flow phenomena clear, a simplified model based on magnetohydrodynamic (MHD) theory was established and calculated. The simulated DC arc plasma was presented with the temperature distribution and the current density distribution. Furthermore, the calculated arc flow velocity field showed that the circular vortex was an embodiment of the arc plasma jet flow progress. The combined action of volume force and contact surface was the main reason of the arc jet flow. supported by National Natural Science Foundation of China (Nos. 51307030, 51277038)

  7. Low temperature, fast deposition of metallic titanium nitride films using plasma activated reactive evaporation

    SciTech Connect

    Montes de Oca Valero, J.A.; Le Petitcorps, Y.; Manaud, J.P.; Chollon, G.; Carrillo Romo, F.J.; Lopez M, A.

    2005-05-01

    Titanium and titanium nitride thin films were deposited on silica glass and W substrates at a high coating growth rate by plasma-activated reactive evaporation (ARE). The crystal structure, preferred orientation and grain size of the coatings were determined by x-ray diffraction (XRD) technique using Cu-K{alpha} x rays. The analysis of the coating morphology was performed by field-emission scanning electron microscopy (FE-SEM). The composition of the films was analyzed by Auger electron spectroscopy (AES) and electron-probe microanalysis (EPMA). The titanium and titanium nitride condensates were collected on a carbon-coated collodion film then characterized by transmission electron microscopy (TEM) in order to study the structures of the deposits at very short deposition times. The resistivity of the films was measured by using the four-point-probe method. The titanium coatings were found to consist of very fine particles (40 nm in grain size) and to exhibit a strong (002) texture. The titanium nitride coatings were substoichiometric (TiN{sub x},x<1), with an oxygen content ranging from 7 to 15 at. % depending on the deposition conditions. The deposits were found to exhibit a (111) preferred orientation. This behavior became stronger with coating thickness. In spite of the presence of oxygen, all the TiN{sub x} coatings obtained at low temperature and a high growth rate in this work exhibited a rather high electrical conductivity.

  8. Modification of Low-Alloy Steel Surface by Plasma Electrolytic Nitriding

    NASA Astrophysics Data System (ADS)

    Kusmanov, S. A.; Smirnov, A. A.; Silkin, S. A.; Belkin, P. N.

    2016-07-01

    The structure of the low-alloy steel after plasma electrolytic nitriding (PEN) in electrolyte containing ammonium nitrate was investigated. The cross-sectional microstructure, composition, and phase constituents of modified layer under different processing conditions were characterized. It is shown that anode PEN provides the saturation of steel with nitrogen and formation of α-Fe2O3, FeO, and Fe3O4 oxides, Fe2-3N nitride, and martensite. The aqueous solution that contained 15 wt.% NH4Cl and 5 wt.% NH4NO3 allows one to obtain the hardened layer with a thickness of 80 μm and a microhardness up to 740 HV during 5 min at 850 °C. Surface roughness decreases from 1.5 to 0.8 μm after 5-min PEN at 650 °C. The proposed electrolyte and processing mode (750 °C, 10 min) enable to obtain the decrease in the weight loss after lubricate wear testing by a factor of 2.7. The base-nitrate electrolyte conditioned a decrease in the corrosion current density by a factor of 9 due to passivating effect of the oxide and nitride of iron.

  9. Modification of Low-Alloy Steel Surface by Plasma Electrolytic Nitriding

    NASA Astrophysics Data System (ADS)

    Kusmanov, S. A.; Smirnov, A. A.; Silkin, S. A.; Belkin, P. N.

    2016-05-01

    The structure of the low-alloy steel after plasma electrolytic nitriding (PEN) in electrolyte containing ammonium nitrate was investigated. The cross-sectional microstructure, composition, and phase constituents of modified layer under different processing conditions were characterized. It is shown that anode PEN provides the saturation of steel with nitrogen and formation of α-Fe2O3, FeO, and Fe3O4 oxides, Fe2-3N nitride, and martensite. The aqueous solution that contained 15 wt.% NH4Cl and 5 wt.% NH4NO3 allows one to obtain the hardened layer with a thickness of 80 μm and a microhardness up to 740 HV during 5 min at 850 °C. Surface roughness decreases from 1.5 to 0.8 μm after 5-min PEN at 650 °C. The proposed electrolyte and processing mode (750 °C, 10 min) enable to obtain the decrease in the weight loss after lubricate wear testing by a factor of 2.7. The base-nitrate electrolyte conditioned a decrease in the corrosion current density by a factor of 9 due to passivating effect of the oxide and nitride of iron.

  10. Degradation of Gate Oxide Reliability due to Plasma-Deposited Silicon Nitride

    NASA Astrophysics Data System (ADS)

    Ogino, Masaaki; Sugahara, Yoshiyuki; Kuribayashi, Hitoshi; Yamabe, Kikuo

    2004-03-01

    The effects of plasma-enhanced chemical vapor deposition (PE-CVD) silicon nitride (p-SiN) passivation films on time dependent dielectric breakdown (TDDB) of gate oxide were studied. It was found that degradation of TDDB characteristics with p-SiN films was suppressed by the change in p-SiN deposition conditions. The correlation between trapped electron density and TDDB characteristics varied, depending on the p-SiN films. The degradation of TDDB characteristics was also enhanced with phosphosilicate glass (PSG) under the p-SiN passivation film.

  11. Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

    NASA Astrophysics Data System (ADS)

    Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki

    2016-05-01

    Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4–1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

  12. Influence of NH4Cl Powder Addition for Fabrication of Aluminum Nitride Coating in Reactive Atmospheric Plasma Spray Process

    NASA Astrophysics Data System (ADS)

    Shahien, Mohammed; Yamada, Motohiro; Yasui, Toshiaki; Fukumoto, Masahiro

    2011-01-01

    Reactive plasma spray is the key to fabricating aluminum nitride (AlN) thermally sprayed coatings. It was possible to fabricate AlN/Al composite coatings using atmospheric plasma spray process through plasma nitriding of Al powders (Al 30 μm). The nitriding reaction and the AlN content could be improved by controlling the spray distance and the feedstock powder particle size. Increasing the spray distance and/or using smaller particle size of Al powders improved the in-flight nitriding reaction. However, it was difficult to fabricate thick and dense AlN coatings with an increase in the spray distance and/or when using fine particles. Thus, the coatings thickness was suppressed because of the complete nitriding of some particles (formation of AlN particles) during flight, which prevents the particle deposition. Furthermore, the excessive vaporization of Al fine particles (due to increased particle temperature) decreased the deposition efficiency. To fabricate thick AlN coatings in the reactive plasma spray process, improving the nitriding reaction of the large Al particles at short spray distance is required to decrease the vaporization of Al particles during flight. This study investigated the influence of adding ammonium chloride (NH4Cl) powders on the nitriding process of large Al powders and on the microstructure of the fabricated coatings. It was possible to fabricate thick AlN coatings at 100 mm spray distance with small addition of NH4Cl powders to the Al feedstock powders (30 μm). Addition of NH4Cl to the starting Al powders promoted the formation of AlN through changing the reaction path to vapor-phase nitridation chlorination-nitridation sequences as confirmed by the thermodynamic analysis of possible intermediate reactions. This changes the nitriding reaction to a mild way, so it is more controlled with no explosive mode and with relatively low heating rates. Thus, NH4Cl acts as a catalyst, nitrogen source, and diluent agent. Furthermore, the evolved

  13. Long range temporal correlation in the chaotic oscillations of a dc glow discharge plasma

    SciTech Connect

    Lahiri, S.; Roychowdhury, D.

    2012-08-15

    Long range temporal correlations in the fluctuations of the plasma floating potentials (measured using a Langmuir probe) are investigated in a dc glow discharge plasma. Keeping the neutral pressure constant, the discharge voltage was varied and at the formation of the plasma, quasi periodic oscillations were excited and on further increase of the discharge voltage they became chaotic (irregular) beyond a threshold voltage. We compared the Lyapunov exponent with the Hurst exponent obtained from R/S statistics which showed an opposite behaviour at the transition point. These results are perhaps new since we have not come across such comparative analysis for chaotic oscillations in a glow discharge plasma before.

  14. Study of stress in tensile nitrogen-plasma-treated multilayer silicon nitride films

    SciTech Connect

    Morin, Pierre; Raymond, Gaetan; Benoit, Daniel; Guiheux, Denis; Pantel, Roland; Volpi, Fabien; Braccini, Muriel

    2011-07-15

    The authors conducted a physico-chemical analysis of tensile sequential-nitrogen-plasma-treated silicon nitride films, which function as stressor liners in complementary metal oxide semiconductor (CMOS) technologies. These films are made of stacked nanometer-thick, plasma-enhanced, chemical vapor-deposited layers which were individually treated with N{sub 2}-plasma, to increase stress. This study allowed us to monitor the evolution of the films' chemical composition and stress as a function of process parameters such as deposition and post-N{sub 2}-plasma duration. Consistent with secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM) and other physico-chemical analysis results, it was shown that the elementary component of the films can be modeled with a bi-layer consisting of an untreated slice at the bottom that is covered by a more tensile post-treated film. In addition, we observed that longer plasma treatments increase residual stress, SiN bond concentration and layer density, while reducing hydrogen content. The stress increase induced by the plasma treatment was shown to correlate with the increase in SiN bonds following a percolation mechanism that is linked to hydrogen dissociation. Kinetics laws describing both SiN bond generation and stress increase are proposed and it is demonstrated that stress increase follows first-order kinetics.

  15. Friction and wear of plasma-deposited amorphous hydrogenated films on silicon nitride

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1991-01-01

    An investigation was conducted to examine the friction and wear behavior of amorphous hydrogenated carbon (a-C:H) films in sliding contact with silicon nitride pins in both dry nitrogen and humid air environments. Amorphous hydrogenated carbon films approximately 0.06 micron thick were deposited on silicon nitride flat substrates by using the 30 kHz ac glow discharge of a planar plasma reactor. The results indicate that an increase in plasma deposition power gives an increase in film density and hardness. The high-density a-C:H films deposited behaved tribologically much like bulk diamond. In the dry nitrogen environment, a tribochemical reaction produced a substance, probably a hydrocarbon-rich layer, that decreased the coefficient of friction. In the humid air environment, tribochemical interactions drastically reduced the wear life of a-C:H films and water vapor greatly increased the friction. Even in humid air, effective lubrication is possible with vacuum-annealed a-C:H films. The vacuum-annealed high-density a-C:H film formed an outermost superficial graphitic layer, which behaved like graphite, on the bulk a-C:H film. Like graphite, the annealed a-C:H film with the superficial graphitic layer showed low friction when adsorbed water vapor was present.

  16. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NASA Astrophysics Data System (ADS)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  17. Study on plasma-spraying coating bioactive ceramics onto silicon nitride surface as composite endosteal implants.

    PubMed

    Xu, L L; Shi, S J

    1997-01-01

    The successful key of endosteal implants depends on the properties of implant materials which are very important for oral implantology at the present. Because silicon nitride has high strength and hydroxylapatite (HA) and flourapatite (FA) have good biocompatibility. In this paper, we apply silicon nitride as base material. Plasma spray HA, FA onto its surface as composite endosteal implants. Physical and chemical properties test, includes X-ray diffraction (XRD), scanning electronic microscope (SEM), EDAX and bonding strength test (push-out test). The results indicate: after plasma-spraying coating, crystalline phase of HA and FA unchanged and form a lot of pores among the crystal particles. Those pores benefit bone growing into them. It is very important for implants to be fixed in bone for long time, Ca/P ratio has no significant change. Bonding strength test results indicate: Si3N4-HA 23.6MPa, Si3N4-FA 27.12 MPa are higher than that of Ti-HA 15.07 MPa. On the basis of these studies, they are kinds of ideal implant materials. PMID:9731426

  18. Role of fluorine in plasma nitridated ZrO{sub 2} thin films under irradiation

    SciTech Connect

    Huang, A. P.; Xiao, Z. S.; Liu, X. Y.; Wang, L.; Chu, Paul K.

    2008-09-22

    The role of fluorine in plasma-nitridated ZrO{sub 2} thin films under electron irradiation is investigated in situ by real-time high-resolution transmission electron microscopy. Fluorine and nitrogen codoping can suppress the microstructure evolution during electron beam bombardment and the corresponding origin is probed and verified. The results obtained by irradiation with an ultraviolet laser show that plasma fluorination can effectively remove the dissociative N or O particles in the ZrO{sub 2} thin films which can escape from the interstitial sites under electron irradiation. The mechanism of the irradiation stability of the F and N codoped ZrO{sub 2} thin film is also discussed.

  19. Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas

    NASA Astrophysics Data System (ADS)

    Shimabayashi, Masaharu; Kurihara, Kazuaki; Horikawa, Yoshimine; Sasaki, Koichi

    2016-03-01

    We examined the atomic concentrations and the weight densities of SiC surfaces irradiated with remote nitrogen plasmas. The unique approach of this work is that we compared the SiC surface irradiated with atomic nitrogen with that irradiated with a mixture of atomic nitrogen and molecular nitrogen in the metastable \\text{A}3Σ \\text{u} + state. As a result, it was found that molecular nitrogen in the \\text{A}3Σ \\text{u} + state has a higher efficiency than atomic nitrogen in the nitriding of SiC surfaces. The weight density measurements have revealed the removal of Si and C from the SiC surface by the irradiation of remote nitrogen plasma. These results suggest that the formation of volatile molecules is less significant when the SiC surface is irradiated with molecular nitrogen in the metastable \\text{A}3Σ \\text{u} + state.

  20. Gallium nitride nanoneedles grown in extremely non-equilibrium nitrogen plasma

    NASA Astrophysics Data System (ADS)

    Mangla, O.; Roy, S.

    2016-05-01

    In the present work, gallium nitride (GaN) nanoneedles are grown on quartz substrates using the high fluence ions of GaN produced by hot, dense and extremely non-equlibrium nitrogen plasma in a modified dense plasma focus device. The formation of nanoneedles is obtained from the scanning electron microscopy with mean size of the head of nanoneedles ~ 70 nm. The nanoneedles are found to be poly-crystalline when studied structurally through the X-ray diffraction. The optical properties of nanoneedles studied using absorption spectra which show more absorption for nanoneedles depsoited one shot of ions irradiation. In addition, the band gap of nanoneedles is found to be increased as compared to bulk GaN. The obtained nanoneedles with increased band gap have potential applications in detector systems.

  1. Thermal plasma treatment of stormwater sediments: comparison between DC non-transferred and partially transferred arc plasma.

    PubMed

    Li, O L; Guo, Y; Chang, J S; Saito, N

    2015-01-01

    The disposal of enormous amount of stormwater sediments becomes an emerging worldwide problem. Stormwater sediments are contaminated by heavy metals, phosphorus, trace organic and hydrocarbons, and cannot be disposed without treatment. Thermal plasma decontamination technology offers a high decomposition rate in a wide range of toxic organic compound and immobilization of heavy metal. In this study, we compared the treatment results between two different modes of thermal plasma: (1) a non-transferred direct current (DC) mode and (2) a partial DC-transferred mode. The reductions of total organic carbon (TOC) were, respectively, 25% and 80% for non-transferred and partially transferred plasma, respectively. Most of the toxic organic compounds were converted majorly to CxHy. In the gaseous emission, the accumulated CxHy, CO, NO and H2S were significantly higher in partially transferred mode than in non-transferred mode. The solid analysis demonstrated that the concentrations of Ca and Fe were enriched by 500% and 40%, respectively. New chemical compositions such as KAlSi3O8, Fe3O4, NaCl and CaSO4 were formed after treatment in partially DC-transferred mode. The power inputs were 1 and 10 kW, respectively, for non-transferred DC mode and a partially DC-transferred mode. With a lower energy input, non-transferred plasma treatment can be used for decontamination of sediments with low TOC and metal concentration. Meanwhile, partially transferred thermal plasma with higher energy input is suitable for treating sediments with high TOC percentage and volatile metal concentration. The organic compounds are converted into valuable gaseous products which can be recycled as an energy source. PMID:25566678

  2. Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma.

    PubMed

    Knoops, Harm C M; Braeken, Eline M J; de Peuter, Koen; Potts, Stephen E; Haukka, Suvi; Pore, Viljami; Kessels, Wilhelmus M M

    2015-09-01

    Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasma was developed and studied. The process exhibited a wide temperature window starting from room temperature up to 500 °C. The material properties and wet-etch rates were investigated as a function of plasma exposure time, plasma pressure, and substrate table temperature. Table temperatures of 300-500 °C yielded a high material quality and a composition close to Si3N4 was obtained at 500 °C (N/Si=1.4±0.1, mass density=2.9±0.1 g/cm3, refractive index=1.96±0.03). Low wet-etch rates of ∼1 nm/min were obtained for films deposited at table temperatures of 400 °C and higher, similar to that achieved in the literature using low-pressure chemical vapor deposition of SiNx at >700 °C. For novel applications requiring significantly lower temperatures, the temperature window from room temperature to 200 °C can be a solution, where relatively high material quality was obtained when operating at low plasma pressures or long plasma exposure times. PMID:26305370

  3. Effects of applied dc radial electric fields on particle transport in a bumpy torus plasma

    NASA Technical Reports Server (NTRS)

    Roth, J. R.

    1978-01-01

    The influence of applied dc radial electric fields on particle transport in a bumpy torus plasma is studied. The plasma, magnetic field, and ion heating mechanism are operated in steady state. Ion kinetic temperature is more than a factor of ten higher than electron temperature. The electric fields raise the ions to energies on the order of kilovolts and then point radially inward or outward. Plasma number density profiles are flat or triangular across the plasma diameter. It is suggested that the radial transport processes are nondiffusional and dominated by strong radial electric fields. These characteristics are caused by the absence of a second derivative in the density profile and the flat electron temperature profiles. If the electric field acting on the minor radius of the toroidal plasma points inward, plasma number density and confinement time are increased.

  4. Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.

    1988-01-01

    The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

  5. Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.

    1989-01-01

    The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

  6. Formation of Expanded Austenite on a Cold-Sprayed AISI 316L Coating by Low-Temperature Plasma Nitriding

    NASA Astrophysics Data System (ADS)

    Adachi, Shinichiro; Ueda, Nobuhiro

    2015-12-01

    Low-temperature plasma nitriding at temperatures below 450 °C is commonly applied to austenitic stainless steels to enhance wear resistance, while maintaining corrosion resistance, by forming expanded austenite (known as the S-phase). In this work, low-temperature plasma nitriding of cold-sprayed AISI 316L coatings was examined. A cold-spray technique was developed to produce metal coatings with less oxidation. However, the cold-sprayed AISI 316L coating obtained by use of nitrogen gas as propellant contained many interconnected pores and cracks, and was, consequently, unsuitable as an anticorrosive coating. Therefore, laser post-treatment was used to modify the coating and increase its density to similar to that of bulk steel. The anticorrosive performance of this coating on a carbon steel substrate in NaCl solution was substantially improved. Subsequent low-temperature plasma nitriding enhanced the wear resistance by two orders of magnitude. It is concluded that cold-sprayed AISI 316L coatings treated by laser post-treatment and subsequent low-temperature plasma nitriding could be used as protective coatings under severe wear and corrosion conditions.

  7. Applications of a d.c. plasma emission spectrometer (DCP) to the analysis of envrionmental samples

    NASA Astrophysics Data System (ADS)

    Grogan, W. C.

    A direct current plasma spectrometer system has been used to determine specific trace elements in samples collected during several marine monitoring surveys. The data is currently being used to assess the impact on the environment of North Sea oil exploitation. The trace elements are routinely monitored in sediment and shellfish extracts and in oil terminal water effluents. The techniques used in conjunction with the d.c. plasma system are evaluated. Stray light and spectral interference problems from calcium and magnesium emissions are identified. Compensation for the interferences using simple linear corrections are described. Analysis of standard reference materials indicates that the direct current plasma system yields results comparable to other analytical techniques.

  8. Tribocorrosion studies of metallic biomaterials: The effect of plasma nitriding and DLC surface modifications.

    PubMed

    Zhao, Guo-Hua; Aune, Ragnhild E; Espallargas, Nuria

    2016-10-01

    The medical grade pure titanium, stainless steel and CoCrMo alloy have been utilized as biomaterials for load-bearing orthopedic prosthesis. The conventional surgery metals suffer from a combined effect of wear and corrosion once they are implanted, which may significantly accelerate the material degradation process. In this work, the tribocorrosion performance of the metallic biomaterials with different surface modifications was studied in the simulated body fluid for the purpose of investigating the effect of the surface treatments on the tribocorrosion performance and eventually finding the most suitable implantation materials. The metals were subjected to surface modifications by plasma nitriding in different treatment temperatures or physical vapor deposition (PVD) to produce diamond-like carbon (DLC) coating, respectively. The dry wear and tribocorrosion properties of the samples were evaluated by using a reciprocating ball-on-disc tribometer equipped with an electrochemical cell. Prior to the tribocorrosion tests, their electrochemical behavior was measured by the potentiodynamic polarization in phosphate buffer saline (PBS) solution at room temperature. Both stainless steel and CoCrMo after low temperature nitriding kept their passive nature by forming an expanded austenite phase. The DLC coated samples presented the low anodic corrosion current due to the chemical inertness of the carbon layer. During the tribocorrosion tests at open circuit potential, the untreated and low temperature nitrided samples exhibited significant potential drop towards the cathodic direction, which was a result of the worn out of the passive film. Galvanic coupling was established between the depassivated (worn) area and the still passive (unworn) area, making the materials suffered from wear-accelerated corrosion. The DLC coating performed as a solid lubricant in both dry wear and tribocorrosion tests, and the resulting wear after the tests was almost negligible. PMID:27348147

  9. Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment.

    PubMed

    Vasquez, M R; Flauta, R E; Wada, M

    2008-02-01

    Monte Carlo simulations were conducted to study the formation of gallium-nitride (GaN) layer on liquid gallium (Ga) sputtering target immersed in nitrogen (N(2)) plasma. In the simulation model, N ions were assumed to possess energy equal to the bias voltage applied to the sputtering target with respect to the plasma. The results showed the surface morphology of GaN changed from a relatively smooth GaN on Ga surface at 50 eV N ion energy to a rough surface with GaN dendrites on liquid Ga at 500 eV ion energy. Further increase in N ion energy up to 1 keV resulted in smaller density of GaN dendrites on surface. Increasing surface coverage of Ga by GaN substantially reduced the sputtering yield of Ga from the target. These simulation results were correlated with previously reported experimental observations on liquid Ga surface immersed in the nitrogen plasma of a plasma-sputter-type ion source. PMID:18315225

  10. Spatially-resolved spectral image of a microwave-induced plasma with Okamoto-cavity for nitridation of steel substrate.

    PubMed

    Sato, Shigeo; Arai, Yuuki; Wagatsuma, Kazuaki

    2014-01-01

    When a nitrogen microwave-induced plasma produced with an Okamoto-cavity was employed as a source for the nitridation of steel samples, the characteristics of the plasma were investigated by analyzing a spatially-resolved emission image of nitrogen excited species obtained with a two-dimensionally imaging spectrograph. Our previous study had reported on an excellent performance of the Okamoto-cavity microwave-induced plasma (MIP), enabling a nitrided layer having a several-micrometer-thickness to form on an iron substrate, even if the treatment is completed within 1 min, which is superior to a conventional plasma nitriding using low-pressure glow discharges requiring a prolonged treatment time. In this paper, the reason for this is discussed based on a spectrometric investigation. The emission images of band heads of nitrogen molecule and nitrogen molecule ion extended toward the axial/radial directions of the plasma at larger microwave powers supplied to the MIP, thus elevating the number density of the excited species of nitrogen, which would activate any chemical reaction on the iron substrate. However, a drastic increase in the growth rate of the nitrided layer when increasing the microwave power from 600 to 700 W, which had been observed in our previous study, could not be explained only from such a variation in the excited species of nitrogen. This result is probably because the growth process is dominantly controlled by thermal diffusion of nitrogen atom after it enters into the iron substrate, where the substrate temperature is the most important parameter concerning the mobility in the iron lattice. Therefore, the Okamoto-cavity MIP could contribute to a thermal source through radiative heating as well as a source of nitrogen excited species, especially in the growth process of the nitrided layer. PMID:24521910

  11. In vitro corrosion resistance of plasma source ion nitrided austenitic stainless steels.

    PubMed

    Le, M K; Zhu, X M

    2001-04-01

    Plasma source ion nitriding has emerged as a low-temperature, low-pressure nitriding approach for low-energy implanting nitrogen ions and then diffusing them into steel and alloy. In this work, a single high nitrogen face-centered-cubic (f.c.c.) phase (gammaN) formed on the 1Cr18Ni9Ti and AISI 316L austenitic stainless steels with a high nitrogen concentration of about 32 at % was characterized using Auger electron spectroscopy, electron probe microanalysis, glancing angle X-ray diffraction, and transmission electron microscopy. The corrosion resistance of the gammaN-phase layer was studied by the electrochemical cyclic polarization measurement in Ringer's solutions buffered to pH from 3.5 to 7.2 at a temperature of 37 degrees C. No pitting corrosion in the Ringer's solutions with pH = 7.2 and 5.5 was detected for the gammaN-phase layers on the two stainless steels. The high pitting potential for the gammaN-phase layers is higher, about 500 and 600 mV, above that of the two original stainless steels, respectively, in the Ringer's solution with pH = 3.5. The corroded surface morphologies of the gammaN-phase layers observed by scanning electron microscopy are consistent with the results of the electrochemical polarization measurement. PMID:11246957

  12. Ion-plasma erosion-resistant nanocoatings based on metal carbides and nitrides

    NASA Astrophysics Data System (ADS)

    Muboyadzhyan, S. A.; Aleksandrov, D. A.; Gorlov, D. S.

    2010-09-01

    The erosion, corrosion, and heat resistance of alloy/ion-plasma nanolayer coating compositions based on TiC and CrC carbides and TiN, CrN, ZrN, and AlN nitrides are studied. The effect of the nanolayer thickness, composition, and structure of the coatings based on the metal nitrides and carbides on the relative erosion resistance of alloy/coating compositions in a gas-abrasive quartz sand flux is studied at a sand grain size of 300-350 μm, abrasive supply rate of 200 g/min, and an angle of flux incidence of 20° (tangential flow) and 70° (near-head-on attack flow). It is shown that high erosion resistance is characteristic of 15-22 μm thick coatings that are produced by assisted deposition and consist of alternating TiN (70 nm) and CrN (70 nm) layers on a VT1-0 titanium alloy or TiC (70 nm) and CrC (70 nm) layers on an EP866 compressor steel.

  13. Co-deposition of titanium and iron nitrides on SS-321 by using plasma focus

    NASA Astrophysics Data System (ADS)

    Ahmad, R.; Hassan, M.; Murtaza, G.; Akhter, J. I.; Qayyum, A.; Waheed, A.; Zakaullah, M.

    2006-02-01

    This article reports the co-deposition process of TiN0.9 and (Fe,Cr)(2)N compounds on SS-321 substrate using a 2.3 kJ dense plasma focus device operated with N-2 discharges. X-ray diffraction analysis is performed to investigate the ion-induced changes in the near surface structure of the SS-321. Scanning electron microscopy with the energy dispersive X-ray spectroscopy is carried out to analyse the surface morphology and the elemental composition of the nitrided samples. The results reveal that at the low fluence of ion bombardment, a non-stoichiometric tertiary phase (Fe,Cr)(x)N is developed, which transforms into a stable stoichiometric compound (Fe,Cr)(2)N by increasing the ion flux. Some CrN precipitates are also observed because of the thermal effect produced by the bombardment of energetic ion beam. Vickers micro-hardness values are increased more than twice for typical ion nitrided samples.

  14. Local bonding environment of plasma deposited nitrogen-rich silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Soh, Martin T. K.; Savvides, N.; Musca, Charles A.; Martyniuk, Mariusz P.; Faraone, Lorenzo

    2005-05-01

    Plasma deposited nitrogen-rich silicon nitride thin films were prepared at temperatures between 80 and 300 °C. The infrared transmission (400-4000cm-1) was measured, and selected absorption bands were quantified through a multiple Lorentzian oscillator parametric analysis. It is observed that the concentration of silicon-centered tetrahedra bonded together through nitrogen atoms increases monotonically with increasing deposition temperature. A qualitative model is presented to highlight the impact of the active adsorption site density on the degree of stepped (ordered) nucleation at the vapor-film interface. The importance of this growth profile, in particular for micro-systems-technology, is discussed in conjunction with measurements of the biaxial modulus and residual stress of the thin films. A mechanism for residual stress controllability is also presented. The atomic concentrations of silicon, nitrogen, and hydrogen in the thin films were calculated using infrared calibration factors derived from the deposition temperature dependent condensation processes. The results for silicon nitride thin films deposited at 300 °C were observed to be similar in composition to silicon diimide. Additional observations of the infrared transmission characteristics are reported, which include the identification of silazane bridge characteristics for the absorption feature around 610cm-1, which is typically associated with Si-H (bending) absorption.

  15. Radio Frequency Plasma Synthesis of Boron Nitride Nanotubes (BNNTs) for Structural Applications: Part I

    NASA Technical Reports Server (NTRS)

    Hales, Stephen J.; Alexa, Joel A.; Jensen, Brian J.; Thomsen, Donald L.

    2016-01-01

    It is evident that nanotubes, such as carbon, boron nitride and even silicon, offer great potential for many aerospace applications. The opportunity exists to harness the extremely high strength and stiffness exhibited by high-purity, low-defect nanotubes in structural materials. Even though the technology associated with carbon nanotube (CNT) development is mature, the mechanical property benefits have yet to be fully realized. Boron nitride nanotubes (BNNTs) offer similar structural benefits, but exhibit superior chemical and thermal stability. A broader range of potential structural applications results, particularly as reinforcing agents for metal- and ceramic- based composites. However, synthesis of BNNTs is more challenging than CNTs mainly because of the higher processing temperatures required, and mass production techniques have yet to emerge. A promising technique is radio frequency plasma spray (RFPS), which is an inductively coupled, very high temperature process. The lack of electrodes and the self- contained, inert gas environment lend themselves to an ultraclean product. It is the aim of this White Paper to survey the state of the art with regard to nano-material production by analyzing the pros and cons of existing methods. The intention is to combine the best concepts and apply the NASA Langley Research Center (LaRC) RFPS facility to reliably synthesize large quantities of consistent, high-purity BNNTs.

  16. Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma

    SciTech Connect

    Okada, H.; Kato, M.; Ishimaru, T.; Sekiguchi, H.; Wakahara, A.; Furukawa, M.

    2014-02-20

    Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma is investigated. Feasibility of precursors of triethylsilane (TES) and bis(dimethylamino)dimethylsilane (BDMADMS) is discussed based on a calculation of bond energies by computer simulation. Refractive indices of 1.81 and 1.71 are obtained for deposited films with TES and BDMADMS, respectively. X-ray photoelectron spectroscopy (XPS) analysis of the deposited film revealed that TES-based film coincides with the stoichiometric thermal silicon nitride.

  17. The effect of plasma on silicon nitride, oxynitride and other metals for enhanced epoxy adhesion for packaging applications

    NASA Astrophysics Data System (ADS)

    Gaddam, Sneha Sen

    The effects of direct plasma chemistries on carbon removal from silicon nitride (SiNx) and oxynitride (SiOxNy ) surfaces and Cu have been studied by x-photoelectron spectroscopy (XPS) and ex-situ contact angle measurements. The data indicate that O2,NH3 and He capacitively coupled plasmas are effective at removing adventitious carbon from silicon nitride (SiNx) and Silicon oxynitride (SiO xNy ) surfaces. O2plasma and He plasma treatment results in the formation of silica overlayer. In contrast, the exposure to NH3 plasma results in negligible additional oxidation of the SiN x and SiOxNy surface. Ex-situ contact angle measurements show that SiNx and SiOxNy surfaces when exposed to oxygen plasma are initially more hydrophilic than surfaces exposed to NH 3 plasma and He plasma, indicating that the O2 plasma-induced SiO2 overlayer is highly reactive towards ambient corresponding to increased roughness measured by AFM. At longer ambient exposures (>~10 hours), however surfaces treated by either O2, He or NH3 plasma exhibit similar steady state contact angles, correlated with rapid uptake of adventitious carbon, as determined by XPS. Surface passivation by exposure to molecular hydrogen prior to ambient exposure significantly retards the increase in the contact angle upon the exposure to ambient. The results suggest a practical route to enhancing the time available for effective bonding to surfaces in microelectronics packaging applications.

  18. Analysis of Electron Temperature in DC Ar/SF6 Plasma Using Cylindrical and Planar Probes

    NASA Astrophysics Data System (ADS)

    Kim, Jin-Woo; Cho, Soon-Gook; Bae, Min-Keun; Kim, Hyung-Jin; Chung, Tae Hun; Chung, Kyu-Sun

    2013-11-01

    Electronegative plasmas are generated by adding SF6 gas to a background argon (Ar) DC plasma with parameters of n0 = 1×1010 cm3 and Te = 2 eV. The heating current of the thoriated filament was in the range of 20.5-21.5 A and the plasmas were generated under a discharge condition of 100 V/0.4 A. The amount of negative ions was controlled by adjusting the ratio of flow rate of SF6 = 0-10% to that of Ar. Plasma parameters were measured using cylindrical and planar electric probes. The behavior of electrons, which means the change in a parameter due to negative ion production, is characterized by measuring the floating and plasma potentials, and electron temperature. Electron temperature seems to increase and the potentials decrease with SF6 flow rate.

  19. High Active Nitrogen Flux Growth of (Indium) Gallium Nitride by Plasma Assisted Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    McSkimming, Brian Matthew

    Plasma-assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) has evolved over the past two decades due to progress in growth science and in the active nitrogen plasma source hardware. The transition from electron cyclotron resonance (ECR) microwave plasma sources to radio frequency (RF) plasma sources has enabled higher growth rates, reduced ion damage and improved operation at higher growth chamber pressures. Even with further improvements in RF plasma sources, PAMBE has remained primarily a research tool partially due to limitations in material growth rates. This dissertation presents results based upon two modifications of a commercially available nitrogen plasma source. These modifications have resulted in record active nitrogen fluxes, and therefore record growth rates of more than 7.6 mum/h. For optimized growth conditions in the standard metal-rich growth regime, the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 mumx3 mum) on the order of 1 nm. Secondary ion mass spectroscopy (SIMS) impurity analysis demonstrates unintentional oxygen incorporation of ˜1x1016, comparable to the metal organic chemical vapor deposition (MOCVD) grown template layer. Additionally, a revised universal growth diagram is proposed allowing the rapid determination of the metal flux needed to grow in a specific growth regime for any and all active nitrogen fluxes available. High temperature nitrogen rich PAMBE growth of GaN has been previously demonstrated as a viable alternative to the challenges presented in maintaining the Ga bilayer required by metal rich growth of GaN. This dissertation also present results demonstrating PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ˜100 °C greater than any previously reported PAMBE growth of GaN. Finally, a revised growth diagram is proposed highlighting a large growth window available at high temperatures.

  20. Simulation Study of an Extended Density DC Glow Toroidal Plasma Source

    SciTech Connect

    Granda-Gutierrez, E. E.; Piedad-Beneitez, A. de la; Lopez-Callejas, R.; Godoy-Cabrera, O. G.; Benitez-Read, J. S.; Pacheco-Sotelo, J. O.; Pena-Eguiluz, R.; Mercado-Cabrera, A.; Valencia A, R.; Barocio, S. R.

    2006-12-04

    Conventional wisdom assigns the DC glow discharge regime to plasma currents below {approx}500 mA values, beyond which the discharge falls into the anomalous glow and the turbulent arc regimes. However, we have found evidence that, during toroidal discharges, this barrier can be ostensibly extended up to 800 mA. Thus, a computer simulation has been applied to the evolution of the main electrical characteristics of such a glow discharge plasma in a toroidal vessel in order to design and construct a respective voltage/current controlled source. This should be able to generate a DC plasma in the glow regime with which currents in the range 10-3-100 A can be experimented and 109-1010 cm-3 plasma densities can be achieved to PIII optimization purposes. The plasma is modelled as a voltage-controlled current source able to be turned on whenever the breakdown voltage is reached across the gap between the anode and the vessel wall. The simulation outcome fits well our experimental measurements showing that the plasma current obeys power laws that are dependent on the power current and other control variables such as the gas pressure.

  1. Improving the empirical model for plasma nitrided AISI 316L corrosion resistance based on Mössbauer spectroscopy

    NASA Astrophysics Data System (ADS)

    Campos, M.; de Souza, S. D.; de Souza, S.; Olzon-Dionysio, M.

    2011-11-01

    Traditional plasma nitriding treatments using temperatures ranging from approximately 650 to 730 K can improve wear, corrosion resistance and surface hardness on stainless steels. The nitrided layer consists of some iron nitrides: the cubic γ ' phase (Fe4N), the hexagonal phase ɛ (Fe2 - 3N) and a nitrogen supersatured solid phase γ N . An empirical model is proposed to explain the corrosion resistance of AISI 316L and ASTM F138 nitrided samples based on Mössbauer Spectroscopy results: the larger the ratio between ɛ and γ ' phase fractions of the sample, the better its resistance corrosion is. In this work, this model is examined using some new results of AISI 316L samples, nitrided under the same previous conditions of gas composition and temperature, but at different pressure, for 3, 4 and 5 h. The sample nitrided for 4 h, whose value for ɛ/ γ ' is maximum (= 0.73), shows a slightly better response than the other two samples, nitrided for 5 and 3 h ( ɛ/ γ ' = 0.72 and 0.59, respectively). Moreover, these samples show very similar behavior. Therefore, this set of samples was not suitable to test the empirical model. However, the comparison between the present results of potentiodynamic polarization curves and those obtained previously at 4 and 4.5 torr, could indicated that the corrosion resistance of the sample which only presents the γ N phase was the worst of them. Moreover, the empirical model seems not to be ready to explain the response to corrosion and it should be improved including the γ N phase.

  2. Dynamic behaviour of dc double anode plasma torch at atmospheric pressure

    NASA Astrophysics Data System (ADS)

    Tu, X.; Chéron, B. G.; Yan, J. H.; Cen, K. F.

    2007-07-01

    An original dc double anode plasma torch which provides a long-time and highly stable atmospheric plasma jet has been devised for the purpose of hazardous waste treatment. The arc fluctuations and dynamic behaviour of the argon and argon-nitrogen plasma jets under different operating conditions have been investigated by means of classical tools, such as the statistic method, fast Fourier transform (FFT) and correlation analysis. In our experiments, the takeover mode is identified as the fluctuation characteristic of the argon plasma jet while the restrike mode is typical in the argon-nitrogen plasma dynamic behaviour. In the case of pure argon, the FFT and correlation calculation results of electrical signals exhibit the only characteristic frequency of 150 Hz, which originates from the torch power and is independent of any change in the operating conditions. It indicates that the nature of fluctuations in an argon plasma jet is mainly induced by the undulation of the tri-phase rectified power supply. In contrast, besides the same low frequency bulk fluctuation, the dynamic behaviour of the argon-nitrogen plasma jet at high frequency (4.1 kHz) is ascribed to the rapid motion of both arc roots on the anode surface. In addition, it is found that each arc root attachment is rather diffused than located at a fixed position on the anode wall in the argon plasma jet, while constricted arc roots occur when nitrogen is added into argon as the plasma working gas.

  3. One-dimensional hybrid simulation of the dc/RF combined driven capacitively coupled CF{sub 4} plasmas

    SciTech Connect

    Wang Shuai; Xu Xiang; Wang Younian

    2012-11-15

    We developed a one-dimensional hybrid model to simulate the dc/RF combined driven capacitively coupled plasma for CF{sub 4} discharges. The numerical results show the influence of the dc source on the plasma density distribution, ion energy distributions (IEDs), and ion angle distributions (IADs) on both RF and dc electrodes. The increase of dc voltage impels more ions with high energy to the electrode applied to the dc source, which makes the IEDs at the dc electrode shift toward higher energy and the peaks in IADs shift toward the small angle region. At the same time, it also decreases ion-energy at the RF electrode and enlarges the ion-angles which strike the RF electrode.

  4. DC Electric Fields and Associated Plasma Drifts Observed with the C/NOFS Satellite

    NASA Technical Reports Server (NTRS)

    Pfaff, R.; Freudenreich, H.; Bromund, K.; Rowland, D.

    2009-01-01

    Initial DC electric field observations and associated plasma drifts are presented from the Vector Electric Field Investigation (VEFI) on the Air Force Communication/Navigation Outage Forecasting System (C/NOFS) satellite. We present statistical averages of the vector fields for the first year of operations that include both the zonal and radial components of the resulting E x B plasma flows at low latitudes. Magnetic field data from the VEFI science magnetometer are used to compute the plasma flows. The DC electric field detector reveals zonal and radial electric fields that undergo strong diurnal variations, typically displaying eastward and outward-directed fields during the day and westward and downward-directed fields at night. There is considerable variation in the large scale DC electric field data, in both the daytime and nighttime cases, with enhanced structures typically observed at night. In general, the measured zonal DC electric field amplitudes include excursions that extend within the 0.4 - 2 m V/m range, corresponding to E x B drifts of the order of 30-150 m/s. The average vertical or radial electric fields may exceed the zonal fields in amplitude by a factor of 1.5 to 2. Although the data compare well, in a general sense, with previous satellite observations and statistical patterns of vertical ion drifts, the E x B drifts we report from C/NOFS rarely show a pronounced pre-reversal enhancement after sunset. We attribute this to a combination of extreme solar minimum conditions and the fact that the C/NOFS orbit of 401 by 867 km carries the probes essentially above the lower altitude regions where the wind-driven dynamo might be expected to create enhanced upwards drifts in the early evening. Evidence for wavenumber 4 tidal effects and other longitudinal signatures have been detected and will be presented. We also discuss off-equatorial electric fields and their relation to the ambient plasma density.

  5. Investigating the effect of Argon Pressure on DC and High Power Magnetron Plasmas

    NASA Astrophysics Data System (ADS)

    Bernales, Baysha; Bolat, Rustem; Anders, Andre; Slack, Jonathan; PAG Team; EETD Team

    2013-10-01

    Smart Glass is fabricated by depositing thin films of specialized material onto a transparent substrate. When a potential is applied across the surface of the Smart Glass, it changes its optical properties. Direct Current Magnetron Sputtering (DCMS) and High Power Impulse Magnetron Sputtering (HiPIMS) are two methods of PVD that are used to fabricate this material. In previous research, it has been noted that magnetron plasmas have localized ionization zones that rotate clockwise in DCMS and counterclockwise in HiPIMS. Not much is known about what causes the change in rotation. This research seeks to investigate what occurs during the first moments of plasma evolution. Both DC and high power magnetron plasmas were observed as Argon pressure was varied. It was found that pressure had a very pronounced effect on the floating-point potential signal that was received from the probes placed in the plasma. It was found that when a high-pressure jet of Argon was injected into the system, that the rotation pattern of the DC magnetron plasma was disrupted. It was also found that at certain pressures, the voltage signal was less indicative of azimuthal rotation and more indicative of z-direction breathing modes.

  6. Desizing of Starch Containing Cotton Fabrics Using Near Atmospheric Pressure, Cold DC Plasma Treatment

    NASA Astrophysics Data System (ADS)

    Prasath, A.; Sivaram, S. S.; Vijay Anand, V. D.; Dhandapani, Saravanan

    2013-03-01

    An attempt has been made to desize the starch containing grey cotton fabrics using the DC plasma with oxygen as the gaseous medium. Process conditions of the plasma reactor were optimized in terms of distance between the plates (3.2 cm), applied voltage (600 V) and applied pressure (0.01 bar) to obtain maximum desizing efficiency. No discolouration was observed in the hot water extracts of the desized sample in presence of iodine though relatively higher solvent extractable impurities (4.53 %) were observed in the plasma desized samples compared to acid desized samples (3.38 %). Also, significant weight loss, improvements in plasma desized samples were observed than that of grey fabrics in terms of drop absorbency.

  7. Volt-ampere characteristics of a nitrogen DC plasma arc with anode melting

    NASA Astrophysics Data System (ADS)

    Zhao, Peng; Ni, Guo-Hua; Meng, Yue-Dong; Nagatsu, Masaaki

    2013-06-01

    The characteristics of a nitrogen arc using a graphite cathode and a melting anode in a pilot-scale plasma furnace are investigated. The voltage is examined as a function of current and apparent plasma length. The voltage increases non-linearly with the increase of apparent plasma length, with the current fixed. The experimental data so obtained are compared with the predictions of the Bowman model for the electric arc, and with numerical simulations as well. The level of agreement between the experimental data at the melting anode and the numerical predictions confirms the suitability of the proposed the Bowman model. These characteristics are relevant to the engineering design and evaluation of a DC plasma furnace and reactor for the treatment of hazardous fly ash waste.

  8. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOEpatents

    Murduck, James M.; Lepetre, Yves J.; Schuller, Ivan K.; Ketterson, John B.

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

  9. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOEpatents

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-07-04

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

  10. Effects of Nozzle Configuration on Flow Characteristics inside DC Plasma Torch

    NASA Astrophysics Data System (ADS)

    Yuan, X. Q.; Li, H.; Zhao, T. Z.; Guo, W. K.; Xu, P.

    2004-10-01

    The effects of nozzle configuration on the characteristics of flow inside DC arc plasma torches are investigated by numerical simulation. The plasma torches with three typical types of nozzle configuration are used in this paper, and these torches are the SG-100 series commercial products of PRAXAIR Thermal Spray Products Inc. The assumption of steady-state, axis-symmetric, local thermodynamic equilibrium, and optically thin plasma is adopted in a two-dimensional modeling of plasma flow inside a plasma torch. The PHOENICS software is used for solving the governing equations, i.e., the conservation equations of mass, momentum, and energy. The calculated arc voltages are consistent with the experimental results when arc current, gas inflow rate, and working gas are the same. Temperature, axial velocity contours inside the plasma torches, and profiles along the torch axis and at the outlet section are presented to show the plasma flow characteristics. Comparisons are made among these torches in detail and the results show that torches with different anode nozzle configurations produce different characteristic plasma flows.

  11. Synthesis of Nanosized Titanium Oxide and Nitride Through Vacuum Arc Plasma Expansion Technique

    NASA Astrophysics Data System (ADS)

    Lepeshev, A. A.; Karpov, I. V.; Ushakov, A. V.; Fedorov, L. Yu.; Shaihadinov, A. A.

    2016-12-01

    Physical vapor deposition techniques such vacuum arc plasma deposition — which are very commonly used in thin film technology — appear to hold much promise for the synthesis of nanocrystalline thin films as well as nanoparticles. Monodisperse and spherical titanium oxide (TiO2) and nitride nanoparticles were produced at room temperature as a cluster beam in the gas phase using a cluster-deposition source. Using the basic principles of the gas condensation method, this study has developed vacuum arc nanoparticle synthesis system. We demonstrate that major process deposition parameter is the pressure in the plasma chamber. This is the major advantage of these techniques over thermal evaporation. Our method affords TiN powders with high specific surface areas exceeding 200m2g-1. TEM micrograph of TiO2 nanoparticles prepared at an oxygen pressure of 60Pa show an average particle size of 6nm. TiO2 nanoparticles prepared at an oxygen pressure of 70Pa were observed to not have a reduced average particle size.

  12. Preparation of cubic boron nitride thin film by the helicon wave plasma enhanced chemical vapor deposition

    SciTech Connect

    Kim, S.; Kim, I.; Kim, K.

    1996-12-01

    Cubic boron nitride ({ital c}-BN) film was deposited on Si(100) substrate using the chemical vapor deposition process assisted by high density plasma of Helicon wave with Borazine (B{sub 3}N{sub 3}H{sub 6}) precursor. It was found that the bombardment of ions with high flux and energy onto the film was necessarily required for synthesizing a {ital c}-BN film. Increasing a negative rf bias on the substrate increased the formation fraction of {ital c}-BN in the film. A nearly pure {ital c}-BN phase was synthesized at the conditions of plasma density in the reactor and rf substrate bias, above 10{sup 11} cm{sup {minus}3} and {minus}350 V, respectively. The phase identification of BN film was carried out by the transmission electron microscopy as well as Fourier transformed infrared spectroscopy. The infrared spectra for {ital c}-BN film synthesized at the rf bias of {minus}350 V appeared at 1093 cm{sup {minus}1} with a strong single peak, which is close to a value for the characteristic vibration mode of bulk {ital c}-BN (1065 cm{sup {minus}1}). The {ital c}-BN in the film was also confirmed and found to be a fine poly-crystalline with the grain sizes ranging from 200 to 400 A. {copyright} {ital 1996 American Institute of Physics.}

  13. Microwave induced plasma (MIP) brazing of silicon nitride to stainless steel

    SciTech Connect

    Samandi, M.; Bate, M.; Donnan, R.; Miyake, S.

    1996-12-31

    In an attempt to accelerate the process of joining of metals to ceramics, a new rapid brazing technology has been developed. In this process, referred to as Microwave Induced Plasma (MIP) brazing, a microwave plasma is used to rapidly heat the ceramic and metal to the melting temperature of the reactive braze material. The heating rate obtained by MIP could be many times faster than those achieved by conventional resistive heating in a tube furnace. The fast heating rate has no detrimental effect on the joint quality and in fact results in the formation of a thick interfacial film suggesting significant interdiffusion between the braze and ceramic, possibly stimulated by the microwave radiation. In this paper the experimental arrangement of the MIP system is described. The unique capability of the MIP heating is demonstrated by successful joining of hot pressed nitride to stainless steel using reactive metal brazing. The results of microstructural characterization of the joints carried out by SEM and EDS will also be presented.

  14. Direct probing of anode arc root dynamics and voltage instability in a dc non-transferred arc plasma jet

    NASA Astrophysics Data System (ADS)

    Ghorui, S.; Tiwari, N.; Meher, K. C.; Jan, A.; Bhat, A.; Sahasrabudhe, S. N.

    2015-12-01

    The transient dynamics of the anode arc root in a dc non-transferred arc plasma torch is captured through fast photography and directly correlated with the associated voltage instability for the first time. The coexistence of multiple arc roots, the transition to a single arc root, root formation and extinction are investigated for the steady, takeover and re-strike modes of the arc. Contrary to the usual concept, the emerging plasma jet of a dc non-transferred arc plasma torch is found to carry current. An unusually long self-propelled arc plasma jet, a consequence of the phenomenon, is demonstrated.

  15. Optimization Study of Pulsed DC Nitrogen-Hydrogen Plasma in the Presence of an Active Screen Cage

    NASA Astrophysics Data System (ADS)

    Saeed, A.; W. Khan, A.; F., Jan; U. Shah, H.; Abrar, M.; Zaka-Ul-Islam, M.; Khalid, M.; Zakaullah, M.

    2014-05-01

    A glow discharge plasma nitriding reactor in the presence of an active screen cage is optimized in terms of current density, filling pressure and hydrogen concentrations using optical emission spectroscopy (OES). The samples of AISI 304 are nitrided for different treatment times under optimum conditions. The treated samples were analyzed by X-ray diffraction (XRD) to explore the changes induced in the crystallographic structure. The XRD pattern confirmed the formation of iron and chromium nitrides arising from incorporation of nitrogen as an interstitial solid solution in the iron lattice. A Vickers microhardness tester was used to evaluate the surface hardness as a function of treatment time (h). The results showed clear evidence of improved surface hardness and a substantial amount of decrease in the treatment time compared with the previous work.

  16. A bulk plasma model for dc and HiPIMS magnetrons

    NASA Astrophysics Data System (ADS)

    Brenning, N.; Axnäs, I.; Raadu, M. A.; Lundin, D.; Helmerson, U.

    2008-11-01

    A plasma discharge model has been developed for the bulk plasma (also called the extended presheath) in sputtering magnetrons. It can be used both for high power impulse magnetron sputtering (HiPIMS) and conventional dc sputtering magnetrons. Demonstration calculations are made for the parameters of the HiPIMS sputtering magnetron at Linköping University, and also benchmarked against results in the literature on dc magnetrons. New insight is obtained regarding the structure and time development of the currents, the electric fields and the potential profiles. The transverse resistivity ηbottom has been identified as having fundamental importance both for the potential profiles and for the motion of ionized target material through the bulk plasma. New findings are that in the HiPIMS mode, as a consequence of a high value of ηbottom, (1) there can be an electric field reversal that in our case extends 0.01-0.04 m from the target, (2) the electric field in the bulk plasma is typically an order of magnitude weaker than in dc magnetrons, (3) in the region of electric field reversal the azimuthal current is diamagnetic in nature, i.e. mainly driven by the electron pressure gradient, and actually somewhat reduced by the electron Hall current which here has a reversed direction and (4) the azimuthal current above the racetrack can, through resistive friction, significantly influence the motion of the ionized fraction of the sputtered material and deflect it sideways, away from the target and towards the walls of the magnetron.

  17. Modelling chemical reactions in dc plasma inside oxygen bubbles in water

    NASA Astrophysics Data System (ADS)

    Takeuchi, N.; Ishii, Y.; Yasuoka, K.

    2012-02-01

    Plasmas generated inside oxygen bubbles in water have been developed for water purification. Zero-dimensional numerical simulations were used to investigate the chemical reactions in plasmas driven by dc voltage. The numerical and experimental results of the concentrations of hydrogen peroxide and ozone in the solution were compared with a discharge current between 1 and 7 mA. Upon increasing the water vapour concentration inside bubbles, we saw from the numerical results that the concentration of hydrogen peroxide increased with discharge current, whereas the concentration of ozone decreased. This finding agreed with the experimental results. With an increase in the discharge current, the heat flux from the plasma to the solution increased, and a large amount of water was probably vaporized into the bubbles.

  18. Autowaves in a dc complex plasma confined behind a de Laval nozzle

    NASA Astrophysics Data System (ADS)

    Fink, M. A.; Zhdanov, S. K.; Schwabe, M.; Thoma, M. H.; Höfner, H.; Thomas, H. M.; Morfill, G. E.

    2013-05-01

    Experiments to explore stability conditions and topology of a dense microparticle cloud supported against gravity by a gas flow were carried out. By using a nozzle-shaped glass insert within the glass tube of a dc discharge plasma chamber a weakly ionized gas flow through a de Laval nozzle was produced. The experiments were performed using neon gas at a pressure of 100 Pa and melamine-formaldehyde particles with a diameter of 3.43 μm. The capturing and stable global confining of the particles behind the nozzle in the plasma were demonstrated. The particles inside the cloud behaved as a single convection cell inhomogeneously structured along the nozzle axis in a tube-like manner. The pulsed acceleration localized in the very head of the cloud mediated by collective plasma-particle interactions and the resulting wave pattern were studied in detail.

  19. Reactive Plasma-Sprayed Aluminum Nitride-Based Coating Thermal Conductivity

    NASA Astrophysics Data System (ADS)

    Shahien, Mohammed; Yamada, Motohiro; Fukumoto, Masahiro; Egota, Kazumi; Okamoto, Kenji

    2015-12-01

    Recently, thick aluminum nitride/alumina (AlN/Al2O3) composite coatings were successfully fabricated through the reactive plasma spraying of fine Al2O3/AlN mixture in the N2/H2 atmospheric plasma. The coatings consist of AlN, Al5O6N, γ-Al2O3, and α-Al2O3 phases. This study will evaluate the thermal conductivity of these complicated plasma-sprayed coatings and optimize the controlling aspects. Furthermore, the influence of the process parameters on the coatings thermal conductivity will be investigated. The fabricated coatings showed very low thermal conductivity (2.43 W/m K) compared to the AlN sintered compacts. It is attributed to the phase composition of the fabricated coatings, oxide content, and porosity. The presence of Al2O3, Al5O6N and the high coating porosity decreased its thermal conductivity. The presence of oxygen in the AlN lattice creates Al vacancies which lead to phonon scattering and therefore suppressed the thermal conductivity. The formation of γ-Al2O3 phase in the coating leads to further decrease in its conductivity, due to its lower density compared to the α-phase. Moreover, the high porosity of the coating strongly suppressed the conductivity. This is due to the complicated microstructure of plasma spray coatings (splats, porosity, and interfaces, particularly in case of reactive spray process), which obviously lowered the conductivity. Furthermore, the measured coating density was lower than the AlN value and suppressed the coating conductivity. In addition, the spraying parameter showed a varied effect on the coating phase composition, porosity, density, and therefore on its conductivity. Although the N2 gas flow improved the nitride content, it suppressed the thermal conductivity gradually. It is attributed to the further increase in the porosity and further decrease in the density of the coatings with the N2 gas. Furthermore, increasing the arc did not show a significant change on the coating thermal conductivity. On the other hand

  20. In-Vitro Biocompatibility Studies of Plasma-Nitrided Titanium Alloy β-21S Using Fibroblast Cells

    NASA Astrophysics Data System (ADS)

    Mohan, L.; Raja, M. D.; Uma, T. S.; Rajendran, N.; Anandan, C.

    2016-04-01

    In the present work, titanium alloy β-21S was nitrided in a low-pressure RF plasma with 100% nitrogen and 20% hydrogen-diluted nitrogen at 800 °C for 4 h and the samples were evaluated for in-vitro biocompatibility by using NIH 3T3 fibroblast cell line. Cellular behavior was evaluated in terms of cell morphology and its viability. FESEM was exploited to observe the morphology of the cells fixed over the surface of the implant. Fibroblasts were seemed to be well distributed over the surface with its characteristic spindle-like shape. Over all, the results indicate that nitriding provided a compatible surface for cell attachment and cell growth. Cell viability and proliferation was assessed by using standard MTT assay. Compared with substrate, the nitrided samples exhibited high-percentage cell viability demonstrating their increased biocompatibility. In addition, the nitrided samples facilitate bone-like apatite formation and exhibited a gradual increase of apatite formation after immersion in Hanks' solution.

  1. Effects of Gas Flow Rate on the Discharge Characteristics of a DC Excited Plasma Jet

    NASA Astrophysics Data System (ADS)

    Li, Xuechen; Jia, Pengying; Di, Cong; Bao, Wenting; Zhang, Chunyan

    2015-09-01

    A direct current (DC) source excited plasma jet consisting of a hollow needle anode and a plate cathode has been developed to form a diffuse discharge plume in ambient air with flowing argon as the working gas. Using optical and electrical methods, the discharge characteristics are investigated for the diffuse plasma plume. Results indicate that the discharge has a pulse characteristic, under the excitation of a DC voltage. The discharge pulse corresponds to the propagation process of a plasma bullet travelling from the anode to the cathode. It is found that, with an increment of the gas flow rate, both the discharge plume length and the current peak value of the pulsed discharge decrease in the laminar flow mode, reach their minima at about 1.5 L/min, and then slightly increase in the turbulent mode. However, the frequency of the pulsed discharge increases in the laminar mode with increasing the argon flow rate until the argon flow rate equals to about 1.5 L/min, and then slightly decreases in the turbulent mode. supported by National Natural Science Foundation of China (Nos. 10805013, 11375051), Funds for Distinguished Young Scientists of Hebei Province, China (No. A2012201045), Department of Education for Outstanding Youth Project of China (No. Y2011120), and Youth Project of Hebei University of China (No. 2011Q14)

  2. Aerosynthesis: Growths of Vertically Aligned Carbon Nanofibers with Air DC Plasma

    SciTech Connect

    Kodumagulla, A; Varanasi, V; Pearce, Ryan; Wu, W-C; Hensley, Dale K; Tracy, Joseph B; McKnight, Timothy E; Melechko, Anatoli

    2014-01-01

    Vertically aligned carbon nanofibers (VACNF) have been synthesized in a mixture of acetone and air using catalytic DC plasma enhanced chemical vapor deposition. Typically, ammonia or hydrogen is used as etchant gas in the mixture to remove carbon that otherwise passivates the catalyst surface and impedes growth. Our demonstration of using air as the etchant gas opens up a possibility that ion etching could be sufficient to maintain the catalytic activity state during synthesis. It also demonstrates the path toward growing VACNFs in open atmosphere.

  3. ECR plasma synthesis of silicon nitride films on GaAs and InSb

    SciTech Connect

    Barbour, J.C.; Lovejoy, M.L.; Ashby, C.I.H.; Howard, A.J.; Custer, J.S.; Shul, R.J.

    1993-12-31

    Growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiN{sub x}) films were grown at temperatures from 30 to 250 C on GaAs substrates. Stress in films was measured as a function of bias applied during growth (varied from 0 to 200 V), and of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiN{sub x} growth without an applied bias (ion energy {congruent}30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of -200 V showed the largest reduction in film stress but also the smallest PL signal.

  4. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  5. Effect of Low-Energy Ions on Plasma-Enhanced Deposition of Cubic Boron Nitride

    NASA Astrophysics Data System (ADS)

    Torigoe, M.; Fukui, S.; Teii, K.; Matsumoto, S.

    2015-09-01

    The effect of low-energy ions on deposition of cubic boron nitride (cBN) films in an inductively coupled plasma with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where sp2-bonded BN phase only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are estimated in the range of a few eV to 35 eV and 100 to 130, respectively. The impact of negative ions is presumed to be negligible due to their low kinetic energy relative to the sheath potential over the substrate surface. The impact of positive ions with high ion to boron flux ratios is primarily responsible for reduction of the ion energy for cBN film deposition. Work supported in part by a Grant-in-Aid for Scientific Research (B), a Funding Program for Next Generation World-Leading Researchers, and an Industrial Technology Research Grant Program 2008.

  6. Nanoindentation of plasma-deposited nitrogen-rich silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Soh, Martin T. K.; Fischer-Cripps, A. C.; Savvides, N.; Musca, C. A.; Faraone, L.

    2006-07-01

    Nanoindentation was performed on plasma-deposited nitrogen-rich silicon nitride thin films deposited on various substrates between 150 and 300°C. A very simple and effective depth-profiling method is introduced, which involves indentation of thin films deposited on substrates with different mechanical properties. The primary advantage of this method is that it avoids the complications associated with many of the complex mathematical models available to deconvolve thin film mechanical properties, while nevertheless allowing the user to visually identify thin film properties. This method is demonstrated on our thin films, which have a hardness between 14 and 21GPa, and reduced modulus between 120 and 160GPa. The initial rise in hardness at low contact depths, commonly attributed to an indentation-size effect, is shown to be due to elastic contact between the indenter and thin film surface. This demonstrates the perils of blindly following the 10% rule for hardness calculation. The contribution of elastic and plastic deformations from nanoindentation is used to clarify the physical meaning of hardness and reduced modulus.

  7. Effect of hydrogen addition on the deposition of titanium nitride thin films in nitrogen added argon magnetron plasma

    NASA Astrophysics Data System (ADS)

    Saikia, P.; Bhuyan, H.; Diaz-Droguett, D. E.; Guzman, F.; Mändl, S.; Saikia, B. K.; Favre, M.; Maze, J. R.; Wyndham, E.

    2016-06-01

    The properties and performance of thin films deposited by plasma assisted processes are closely related to their manufacturing techniques and processes. The objective of the current study is to investigate the modification of plasma parameters occurring during hydrogen addition in N2  +  Ar magnetron plasma used for titanium nitride thin film deposition, and to correlate the measured properties of the deposited thin film with the bulk plasma parameters of the magnetron discharge. From the Langmuir probe measurements, it was observed that the addition of hydrogen led to a decrease of electron density from 8.6 to 6.2  ×  (1014 m‑3) and a corresponding increase of electron temperature from 6.30 to 6.74 eV. The optical emission spectroscopy study reveals that with addition of hydrogen, the density of argon ions decreases. The various positive ion species involving hydrogen are found to increase with increase of hydrogen partial pressure in the chamber. The thin films deposited were characterized using standard surface diagnostic tools such as x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), x-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS). Although it was possible to deposit thin films of titanium nitride with hydrogen addition in nitrogen added argon magnetron plasma, the quality of the thin films deteriorates with higher hydrogen partial pressures.

  8. Study of the effect of plasma-striking atmosphere on Fe-oxidation in thermal dc arc-plasma processing

    SciTech Connect

    Banerjee, I.; Khollam, Y. B.; Mahapatra, S. K.; Das, A. K.; Bhoraskar, S. V.

    2010-11-15

    The effect of plasma-striking atmosphere: air and air+Ar-gas on the crystallization of Fe-oxide phases was studied using dc thermal arc-plasma processing route. The powders were characterized by x-ray diffraction, vibrating sample magnetometry, transmission electron microscopy, and Moessbauer spectroscopy techniques. At room temperature and O{sub 2} rich atmosphere, arc-evaporated Fe{sup 2+} ions oxidize into either {gamma}-Fe{sub 2}O{sub 3} or Fe{sub 3}O{sub 4} depending upon the combining ratio of Fe with molecular O{sub 2}. Fe/O ratio could be adjusted using proper flow rate of Ar gas to crystallize the pure {gamma}-Fe{sub 2}O{sub 3}.

  9. Interaction of deuterium plasma with sputter-deposited tungsten nitride films

    NASA Astrophysics Data System (ADS)

    Gao, L.; Jacob, W.; Meisl, G.; Schwarz-Selinger, T.; Höschen, T.; von Toussaint, U.; Dürbeck, T.

    2016-01-01

    Magnetron-sputtered tungsten nitride (WNx) films were used as a model system to study the behaviour of re-deposited WNx layers which could form in fusion devices with tungsten (W) wall during nitrogen seeding. The interaction of such WNx layers with deuterium (D) plasmas was investigated in dedicated laboratory experiments. D retention and N removal due to D plasma exposure (D flux: 9.9  ×  1019 D m-2 s-1, ion energy 215 eV) at different temperatures were measured with ion beam analysis (IBA). Low-energy argon sputtering followed by IBA was applied to resolve the D distribution in the top-most surface of WNx with significantly improved depth resolution compared with the standard D depth profiling method by nuclear reaction analysis. Experimentally determined thicknesses for the penetration of D in WNx were compared with the penetration depth for D calculated in SDTrimSP simulations. Results show that D is only retained within the ion penetration range for samples exposed at 300 K. In contrast to the 300 K case, D diffuses beyond the implantation depth in a sample exposed at 600 K. However, the D penetration depth is much lower than in pure W at comparable conditions. The total amount of retained D in WNx at 600 K is by 50% lower than for implantation at 300 K with the same D fluence. Nitrogen is removed only within the D ion range.

  10. Characteristics of a plasma production and a laser-induced discharge by a CO2 laser on DC electric field

    SciTech Connect

    Ihara, S.; Maiguma, T.; Satoh, S.; Ishimine, M.; Yamabe, C.

    1996-05-01

    The experiments of a laser-induced discharge were carried out with a CO{sub 2} laser radiation in the atmospheric ambient gases under a DC electric field applied. In these experiments, both of the laser-induced discharge and the plasma production by the CO{sub 2} laser were suppressed with an increasing DC electric field strength. Although the laser-produced plasma was generated between the electrodes without DC electric field, both the probability of induced-discharge and plasma production decreased with the applied voltage across the electrodes. In this paper, the mechanisms of the phenomena for the suppression of the plasma production under applying the electric field between electrodes were discussed. It was found that the attachment processes of electrons most likely played an important role in this phenomena. {copyright} {ital 1996 American Institute of Physics.}

  11. Microstructures and Mechanical Performance of Plasma-Nitrided Al0.3CrFe1.5MnNi0.5 High-Entropy Alloys

    NASA Astrophysics Data System (ADS)

    Tang, Wei-Yeh; Chuang, Ming-Hao; Lin, Su-Jien; Yeh, Jien-Wei

    2012-07-01

    This study investigates the effect of plasma nitriding at 798 K (525 °C) on microstructures and the mechanical performance of Al0.3CrFe1.5MnNi0.5 high-entropy alloys (HEAs) obtained using different cast and wrought processing. All the alloys can be well nitride, with a thickness of around 80 μm, and attain a peak hardness level around Hv 1300 near the surface. The main nitride phases are CrN, AlN, and (Mn, Fe)4N. Those of the substrates are bcc, fcc, Al-, and Ni-rich B2 precipitates, and ρ phase. Their relative amounts depend on the prior processing and also change under the heat treatment during nitriding. The formation of ρ phase during nitriding could in-situ harden the substrate to attain the suitable level required for wear applications. This gives the advantage in simplifying the processing for making a wear-resistance component or a mold since austenitizing, quench hardening, and tempering required for steels such as SACM and SKD steels are no longer required and final finishing can be accomplished before nitriding. Nitrided Al0.3CrFe1.5MnNi0.5 samples have much better wear resistance than un-nitrided ones by 49 to 80 times and also exhibit superior adhesive wear resistance to conventional nitrided alloys: nitriding steel SACM-645 (AISI 7140), 316 stainless steel, and hot-mold steel SKD-61 (AISI H13) by 22 to 55 times depending on prior processing. The superiority is due to the fact that the present nitrided alloys possess a much thicker highly hardened layer than the conventional alloys.

  12. Some numerical simulation results of swirling flow in d.c. plasma torch

    NASA Astrophysics Data System (ADS)

    Felipini, C. L.; Pimenta, M. M.

    2015-03-01

    We present and discuss some results of numerical simulation of swirling flow in d.c. plasma torch, obtained with a two-dimensional mathematical model (MHD model) which was developed to simulate the phenomena related to the interaction between the swirling flow and the electric arc in a non-transferred arc plasma torch. The model was implemented in a computer code based on the Finite Volume Method (FVM) to enable the numerical solution of the governing equations. For the study, cases were simulated with different operating conditions (gas flow rate; swirl number). Some obtained results were compared to the literature and have proved themselves to be in good agreement in most part of computational domain regions. The numerical simulations performed with the computer code enabled the study of the behaviour of the flow in the plasma torch and also study the effects of different swirl numbers on temperature and axial velocity of the plasma flow. The results demonstrated that the developed model is suitable to obtain a better understanding of the involved phenomena and also for the development and optimization of plasma torches.

  13. Influence of injected silver content on synthesis of silver coated nickel particles by DC thermal plasma

    NASA Astrophysics Data System (ADS)

    Park, Si Taek; Kim, Tae-Hee; Park, Dong-Wha

    2016-06-01

    Silver nanoparticle-coated spherical nickel particles were prepared from a mixture of micro-sized silver and nickel as raw materials by DC thermal plasma treatment. The mixture of micro-sized silver and nickel powders was injected into the high-temperature region of an argon thermal plasma jet. Although the silver, with its very high thermal conductivity and relatively low boiling point, was thoroughly evaporated by this process, nickel was not evaporated perfectly because of its comparatively low thermal conductivity and high boiling point. The rough nickel powder was spheroidized as it melted. Finally, silver evaporated by the thermal plasma quickly condensed into nanoparticles on the surfaces of the micro-sized spherical nickel particles, aided by the sharp temperature gradient of the thermal plasma jet. With varying the ratios of silver to nickel feedstock from 1:10 to 5:1, the products synthesized in each condition were examined by XRD, XPS, FE-SEM, and FE-TEM. More silver nanoparticles were attached on the nickel by increasing the injected feedstock to 9.8 at% silver. Meanwhile, a decrease of silver in the products was observed when larger amounts of silver were introduced to the thermal plasma jet. The exposed silver components decreased with greater proportions of silver feedstock because of the metal's dendritic structure and the formation of silver-coated silver particles.

  14. Study on effect of plasma surface treatments for diamond deposition by DC arc plasmatron.

    PubMed

    Kang, In-Je; Joa, Sang-Beom; Lee, Heon-Ju

    2013-11-01

    To improve the thermal conductivity and wear resistance of ceramic materials in the field of renewable energy technologies, diamond coating by plasma processing has been carried out in recent years. This study's goal is to improve diamond deposition on Al2O3 ceramic substrates by plasma surface treatments. Before diamond deposition was carried out in a vacuum, plasma surface treatments using Ar gas were conducted to improve conditions for deposition. We also conducted plasma processing for diamond deposition on Al2O3 ceramic substrates using a DC arc Plasmatron. The Al2O3 ceramic substrates with diamond film (5 x 15 mm2), were investigated by SEM (Scanning Electron Microscopy), AFM (Atomic Force Microscopy) and XRD (X-ray Diffractometer). Then, the C-H stretching of synthetic diamond films by FTIR (Fourier Transform Infrared Spectroscopy) was studied. We identified nanocrystalline diamond films on the Al2O3 ceramic substrates. The results showed us that the deposition rate of diamond films was 2.3 microm/h after plasma surface treatments. Comparing the above result with untreated ceramic substrates, the deposition rate improved with the surface roughness of the deposited diamond films. PMID:24245257

  15. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    SciTech Connect

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  16. Comparison of CO2 and oxygen DC submerged thermal plasmas for decomposition of carboxylic acid in aqueous solution

    NASA Astrophysics Data System (ADS)

    Safa, S.; Hekmat-Ardakan, A.; Soucy, G.

    2014-11-01

    The feasibility of the carboxylic acid decomposition with two different direct current (DC) thermal plasma torches was investigated. An oxygen DC submerged thermal plasma torch and a newly designed submerged DC plasma torch operating with a mixture of carbon dioxide and methane (CO2/CH4) were used. Sebacic acid was selected as a representative of pollutants in the most wastewater produced by chemical process industries. The effect of different operational conditions including treatment time, the reactor pressure as well as the role of oxidizing agents such as (H2O2) were investigated on the decomposition rate of sebacic acid. Concentration of sebacic acid was quantified by Ion Chromatography/Mass Spectrometry (IC/MS). The oxygen plasma showed higher decomposition rate in basic medium. Adding H2O2 into aqueous solution enhanced the sebacic acid decomposition rate with the CO2/CH4 plasma up to the same decomposition rate of the oxygen plasma. Increasing the pressure also increased the decomposition rate for both plasmas with an increase twice higher for the CO2/CH4 plasma than that of the oxygen plasma. This work therefore presents the conditions in which these plasmas can provide the same decomposition rate for contaminants in aqueous solution.

  17. Structural and Dynamical Properties of Microrod Dusty Plasma in a Uniform DC Discharge under Microgravity

    SciTech Connect

    Usachev, Alexander; Zobnin, Andrey; Petrov, Oleg; Fortov, Vladimir

    2008-09-07

    In present experiment an ordering and dynamics of monodisperse nylon rods (D = 10 {mu}m, L = 300 {mu}m) in a uniform DC gas discharge plasma under microgravity have been investigated. Ordered rod structures were registered in DC discharge with a rod concentration of 400-8000 cm{sup -3} and a neon pressure range of 20-50 Pa. The structures revealed orientationally ordered hexagonal structures. DC discharge became unstable at rod number density more then 8000 cm{sup -3}. Rod drift velocities in a permanent electric field were measured for the neon pressure range. Dust acoustic instability ({nu}{approx}0.4{+-}0.1 Hz, {lambda}{approx}1.1{+-}0.4 cm, C{sub DAW}{approx}0.5 cm/s) in rod cloud was observed at a neon pressure of 25 Pa and a rod number density of 1500 cm{sup -3}. Using the 'low' frequency approximation of the linearized DAW dispersion relation and the measured rod drift velocity a rod electric charge had been estimated as Z{sub R}{approx}150000e.

  18. Desorption behavior of zinc atoms from zinc-sulfate solution irradiated with pulsed DC plasma

    NASA Astrophysics Data System (ADS)

    Takaba, Takafumi; Suzuki, Haruka; Toyoda, Hirotaka

    2016-07-01

    A DC pulsed plasma ignited between a metal needle and zinc sulfate (ZnSO4) solution electrode was used to investigate Zn metal desorption from an electrolyte solution. Using an ICCD camera and optical band-pass filter, 2D atomic absorption spectroscopy was carried out during irradiation of pulsed plasma to the surface of the solution. The time-resolved measurement of Zn atoms released to the gas phase revealed that the Zn desorption rate monotonically increased with increasing number of discharge repetitions. The surface temperature of the electrolyte solution was observed with a thermographic camera, and correlations between the H2O and Zn desorption rate were inspected. The correlation between the H2O and Zn desorption rate suggested that Zn desorption is assisted not only by the electric field of the discharge but also by H2O evaporating from the solution.

  19. 'PK-4' - Laser-driven shear flow in a DC discharge complex plasma

    SciTech Connect

    Kretschmer, M.; Hoefner, H.; Thoma, M.; Fink, M.; Ratynskaia, S.; Morfill, G.; Tarantik, K.; Fortov, V.; Petrov, O.; Usachev, A.; Zobnin, A.; Gerasimov, Yu.

    2005-10-31

    Flows, shear flows, laminar and turbulent flows on the microscopic scales are one of the fundamental issues in fluid dynamics. Due to their special properties, complex plasmas provide an excellent opportunity to study these flows, even on the scale of individual particles. To this end, experiments were conducted in the 'Plasmakristall 4' (PK-4) experimental device that uses the positive column of a high voltage DC discharge to produce complex (dusty) plasmas. The linear geometry of PK-4 provides the opportunity to study all these kinds of flow phenomena as well as waves and collisions. Since gravity distorts most of the effects to be studied with PK-4, the facility is planned to be operated onboard the International Space Station ISS from 2008. In order to generate a high-velocity shear flow PK-4 is now upgraded with a 20W manipulation laser system.

  20. Growth of aligned carbon nanotubes on carbon microfibers by dc plasma-enhanced chemical vapor deposition

    SciTech Connect

    Chen, L H.; AuBuchon, J F.; Chen, I C.; Daraio, C; Ye, X R.; Gapin, A; Jin, Sungho; Wang, Chong M.

    2006-01-16

    It is shown that unidirectionally aligned carbon nanotubes can be grown on electrically conductive network of carbon microfibers via control of buffer layer material and applied electric field during dc plasma chemical vapor deposition growth. Ni catalyst deposition on carbon microfiber produces relatively poorly aligned nanotubes with significantly varying diameters and lengths obtained. The insertion of Ti 5 nm thick underlayer between Ni catalyst layer and C microfiber substrate significantly alters the morphology of nanotubes, resulting in much better aligned, finer diameter, and longer array of nanotubes. This beneficial effect is attributed to the reduced reaction between Ni and carbon paper, as well as prevention of plasma etching of carbon paper by inserting a Ti buffer layer. Such a unidirectionally aligned nanotube structure on an open-pore conductive substrate structure may conveniently be utilized as a high-surface-area base electrodes for fuel cells, batteries, and other electrochemical and catalytic reactions.

  1. Inertization of heavy metals present in galvanic sludge by DC thermal plasma.

    PubMed

    Leal Vieira Cubas, Anelise; de Medeiros Machado, Marília; de Medeiros Machado, Marina; Gross, Frederico; Magnago, Rachel Faverzani; Moecke, Elisa Helena Siegel; Gonçalvez de Souza, Ivan

    2014-01-01

    Galvanic sludge results from the treatment of effluents generated by the industrial metal surface treatment of industrial material, which consists in the deposition of a metal on a surface or a metal surface attack, for example, electrodeposition of conductors (metals) and non conductive, phosphate, anodizing, oxidation and/or printed circuit. The treatment proposed here is exposure of the galvanic sludge to the high temperatures provided by thermal plasma, a process which aims to vitrify the galvanic sludge and render metals (iron, zinc, and chromium) inert. Two different plasma reactors were assembled: with a DC transferred arc plasma torch and with a DC nontransferred arc plasma torch. In this way it was possible to verify which reactor was more efficient in the inertization of the metals and also to investigate whether the addition of quartzite sand to the sludge influences the vitrification of the material. Quantification of water content and density of the galvanic raw sludge were performed, as well as analyzes of total organic carbon (TOC) and identify the elements that make up the raw sludge through spectroscopy X-ray fluorescence (XRF). The chemical composition and the form of the pyrolyzed and vitrified sludge were analyzed by scanning electron microscopy with energy-dispersive X-ray spectrometer (SEM-EDS) analysis, which it is a analysis that shows the chemical of the sample surface. The inertization of the sludge was verified in leaching tests, where the leachate was analyzed by flame atomic absorption spectroscopy (FAAS). The results of water content and density were 64.35% and 2.994 g.cm(-3), respectively. The TOC analysis determined 1.73% of C in the sample of galvanic raw sludge, and XRF analysis determined the most stable elements in the sample, and showed the highest peaks (higher stability) were Fe, Zn, and Cr. The efficiency of the sludge inertization was 100% for chromium, 99% for zinc, and 100% for iron. The results also showed that the most

  2. Ion bombardment-induced mechanical stress in plasma-enhanced deposited silicon nitride and silicon oxynitride films

    SciTech Connect

    Claassen, W.A.P.

    1987-03-01

    The authors have studied the influence of different deposition conditions on the mechanical stress of silicon nitride and silicon oxynitride layers formed by plasma-enhanced deposition onto silicon substrates. It appears that the mechanical stress of the as-deposited silicon (oxy)nitride layer is a combined effect of the extent of ion bombardment and the deposition temperature on the hydrogen desorption rate. Deposited films show a tensile stress character when the hydrogen desorption rate is thermally controlled, whereas in the case of an ion-bombardment-controlled hydrogen desorption rate the deposited films have a compressive stress. It is also shown that due to annealing at temperatures above the deposition temperature the films are densified as a result of hydrogen desorption and cross-linking.

  3. On the nature of carbon nitride nanocrystals formed by plasma enhanced chemical vapor deposition and rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Lim, S. F.; Wee, A. T. S.; Lin, J.; Chua, D. H. C.; Huan, C. H. A.

    1999-06-01

    Using high-resolution transmission electron microscopy (HRTEM) and atomic force microscopy, carbon nitride nanocrystals were observed in films deposited by RF plasma-enhanced chemical vapor deposition (RF-PECVD) followed by a rapid thermal annealing (RTA) to 1000°C. The (30±10) nm crystals are embedded in an amorphous matrix, and the interplanar lattice spacings suggest that the crystals are the hexagonal β-carbon nitride phase. Investigations using Fourier transform infra-red spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) of the films show that RTA increases the sp 3 content of the films but decreases the CN (nitrile), N-H and C-H content.

  4. DC Electric Fields, Associated Plasma Drifts, and Irregularities Observed on the C/NOFS Satellite

    NASA Technical Reports Server (NTRS)

    Pfaff, R.; Freudenreich, H.; Klenzing, J.

    2011-01-01

    Results are presented from the Vector Electric Field Investigation (VEFI) on the Air Force Communication/Navigation Outage Forecasting System (C/NOFS) satellite, a mission designed to understand, model, and forecast the presence of equatorial ionospheric irregularities. The VEFI instrument includes a vector DC electric field detector, a fixed-bias Langmuir probe operating in the ion saturation regime, a flux gate magnetometer, an optical lightning detector, and associated electronics including a burst memory. Compared to data obtained during more active solar conditions, the ambient DC electric fields and their associated E x B drifts are variable and somewhat weak, typically < 1 mV/m. Although average drift directions show similarities to those previously reported, eastward/outward during day and westward/downward at night, this pattern varies significantly with longitude and is not always present. Daytime vertical drifts near the magnetic equator are largest after sunrise, with smaller average velocities after noon. Little or no pre-reversal enhancement in the vertical drift near sunset is observed, attributable to the solar minimum conditions creating a much reduced neutral dynamo at the satellite altitude. The nighttime ionosphere is characterized by larger amplitude, structured electric fields, even where the plasma density appears nearly quiescent. Data from successive orbits reveal that the vertical drifts and plasma density are both clearly organized with longitude. The spread-F density depletions and corresponding electric fields that have been detected thus far have displayed a preponderance to appear between midnight and dawn. Associated with the narrow plasma depletions that are detected are broad spectra of electric field and plasma density irregularities for which a full vector set of measurements is available for detailed study. The VEFI data represents a new set of measurements that are germane to numerous fundamental aspects of the electrodynamics

  5. Structured DC Electric Fields With and Without Associated Plasma Density Gradients Observed with the C/NOFS Satellite

    NASA Technical Reports Server (NTRS)

    Pfaff, R.; Rowland, D.; Klenzing, J.; Freudenreich, H.; Bromund, K.; Liebrecht, C.; Roddy, P.; Hunton, D.

    2009-01-01

    DC electric field observations and associated plasma drifts gathered with the Vector Electric Field Investigation on the Air Force Communication/Navigation Outage Forecasting System (C/NOFS) satellite typically reveal considerable variation at large scales (approximately 100's of km), in both daytime and nighttime cases, with enhanced structures usually confined to the nightside. Although such electric field structures are typically associated with plasma density depletions and structures, as observed by the Planar Langmuir Probe on C/NOFS, what is surprising is the number of cases in which large amplitude, structured DC electric fields are observed without a significant plasma density counterpart structure, including their appearance at times when the ambient plasma density appears relatively quiescent. We investigate the relationship of such structured DC electric fields and the ambient plasma density in the C/NOFS satellite measurements observed thus far, taking into account both plasma density depletions and enhancements. We investigate the mapping of the electric fields along magnetic field lines from distant altitudes and latitudes to locations where the density structures, which presumably formed the original seat of the electric fields, are no longer discernible in the observations. In some cases, the electric field structures and spectral characteristics appear to mimic those associated with equatorial spread-F processes, providing important clues to their origins. We examine altitude, seasonal, and longitudinal effects in an effort to establish the origin of such structured DC electric fields observed both with, and without, associated plasma density gradients

  6. Model for nitridation of nanoscale SiO{sub 2} thin films in pulsed inductively coupled N{sub 2} plasma

    SciTech Connect

    Rauf, Shahid; Lim, Sangwoo; Ventzek, Peter L.G.

    2005-07-15

    As nitration of SiO{sub 2} gate dielectric can increase the film's dielectric constant and reduce boron penetration into the Si channel during ion implantation, plasma nitridation is of considerable interest for the fabrication of semiconductor devices. A coupled plasma equipment-surface physics model is used in conjunction with an experimental analysis of nitrided SiO{sub 2} thin films to understand the mechanism of SiO{sub 2} plasma nitridation. This investigation is conducted in a pulsed inductively coupled N{sub 2} plasma. Computational results show that N atoms and N{sub 2}{sup +} ions are the primary species in the N{sub 2} plasma that contribute to the nitridation of SiO{sub 2} thin film. N atoms adsorb at the SiO{sub 2} surface and diffuse into the bulk film, and most nitrogen near the surface is due to these adsorbed N atoms. N{sub 2}{sup +} ions, on the other hand, penetrate deeper into the SiO{sub 2} film in an ion-implantation-like manner, and these ions are responsible for the observed tail in the nitrogen concentration profile. Nitrogen concentration in the film can be increased by enhancing the plasma source power or the nitridation time. However, once the dielectric surface starts saturating with nitrogen, further nitrogen adsorption is inhibited and nitridation rate tapers off. As the fluxes of atomic N and N{sub 2}{sup +} ions to the wafer decrease with increasing gas pressure, the nitridation rate decreases with gas pressure. For the range of SiO{sub 2} film thickness examined (13-15 A ), the nitrogen transport and reaction properties in the film are film thickness dependent, probably due to the nonuniform density of the initial SiO{sub 2} thin film or to interfacial stresses.

  7. Arc-Cathode Coupling in the Modeling of a Conventional DC Plasma Spray Torch

    NASA Astrophysics Data System (ADS)

    Alaya, M.; Chazelas, C.; Mariaux, G.; Vardelle, A.

    2015-01-01

    The plasma torch is the basis of the plasma spray process and understanding of the electric arc dynamics within the plasma torch is necessary for better control of torch and process instabilities. Numerical simulation is a useful tool for investigating the effect of the torch geometry and operating parameters on the electric arc characteristics provided that the model of arc dynamics is reliable and the boundary conditions of the computational domain are well founded. However, such a model should also address the intricate transient and 3D interactions between the electrically conducting fluid and electromagnetic, thermal, and acoustics phenomena. Especially, the description of the electrode regions where the electric arc connects with solid material is an important part of a realistic model of the plasma torch operation as the properties of electric arcs at atmospheric pressure depend not only on the arc plasma medium, but also on the electrodes. This paper describes the 3D and time-dependent numerical simulation of a plasma arc and is focused on the cathode boundary conditions. This model was used to investigate the differences in arc characteristics when the cathode is included into the numerical domain and coupled with the arc. The magnetic and thermal coupling between the cathode and arc made it possible to get rid of the current density boundary condition at the cathode tip that is delicate to predetermine. It also allowed a better prediction of the cathode flow jet generated by the pumping action induced by the interaction of the self-magnetic field with the electric current and so it allowed a better description of the dynamics of arc. It should be a necessary step in the development of a fully predictive model of DC plasma torch operation.

  8. Production of geopolymers using glass produced from DC plasma treatment of air pollution control (APC) residues.

    PubMed

    Kourti, Ioanna; Rani, D Amutha; Deegan, D; Boccaccini, A R; Cheeseman, C R

    2010-04-15

    Air pollution control (APC) residues are the hazardous waste produced from cleaning gaseous emissions at energy-from-waste (EfW) facilities processing municipal solid waste (MSW). APC residues have been blended with glass-forming additives and treated using DC plasma technology to produce a high calcium alumino-silicate glass. This research has investigated the optimisation and properties of geopolymers prepared from this glass. Work has shown that high strength geopolymers can be formed and that the NaOH concentration of the activating solution significantly affects the properties. The broad particle size distribution of the APC residue glass used in these experiments results in a microstructure that contains unreacted glass particles included within a geopolymer binder phase. The high calcium content of APC residues may cause the formation of some amorphous calcium silicate hydrate (C-S-H) gel. A mix prepared with S/L=3.4, Si/Al=2.6 and [NaOH]=6M in the activating solution, produced high strength geopolymers with compressive strengths of approximately 130 MPa. This material had high density (2070 kg/m(3)) and low porosity. The research demonstrates for the first time that glass derived from DC plasma treatment of APC residues can be used to form high strength geopolymer-glass composites that have potential for use in a range of applications. PMID:20022170

  9. Plasma parameters of pulsed-dc discharges in methane used to deposit diamondlike carbon films

    NASA Astrophysics Data System (ADS)

    Corbella, C.; Rubio-Roy, M.; Bertran, E.; Andújar, J. L.

    2009-08-01

    Here we approximate the plasma kinetics responsible for diamondlike carbon (DLC) depositions that result from pulsed-dc discharges. The DLC films were deposited at room temperature by plasma-enhanced chemical vapor deposition (PECVD) in a methane (CH4) atmosphere at 10 Pa. We compared the plasma characteristics of asymmetric bipolar pulsed-dc discharges at 100 kHz to those produced by a radio frequency (rf) source. The electrical discharges were monitored by a computer-controlled Langmuir probe operating in time-resolved mode. The acquisition system provided the intensity-voltage (I-V) characteristics with a time resolution of 1 μs. This facilitated the discussion of the variation in plasma parameters within a pulse cycle as a function of the pulse waveform and the peak voltage. The electron distribution was clearly divided into high- and low-energy Maxwellian populations of electrons (a bi-Maxwellian population) at the beginning of the negative voltage region of the pulse. We ascribe this to intense stochastic heating due to the rapid advancing of the sheath edge. The hot population had an electron temperature Tehot of over 10 eV and an initial low density nehot which decreased to zero. Cold electrons of temperature Tecold˜1 eV represented the majority of each discharge. The density of cold electrons necold showed a monotonic increase over time within the negative pulse, peaking at almost 7×1010 cm-3, corresponding to the cooling of the hot electrons. The plasma potential Vp of ˜30 V underwent a smooth increase during the pulse and fell at the end of the negative region. Different rates of CH4 conversion were calculated from the DLC deposition rate. These were explained in terms of the specific activation energy Ea and the conversion factor xdep associated with the plasma processes. The work deepens our understanding of the advantages of using pulsed power supplies for the PECVD of hard metallic and protective coatings for industrial applications (optics

  10. Preparation of ultrafine silicon nitride, and silicon nitride and silicon carbide mixed powders in a hybrid plasma

    SciTech Connect

    Lee, H.J.; Eguchi, K.; Yoshida, T. )

    1990-11-01

    This paper describes ultrafine Si{sub 3}N{sub 4} and Si{sub 3}N{sub 4} + SiC mixed powders synthesized through thermal plasma chemical vapor deposition (CVD) using a hybrid plasma which was characterized by the superposition of a radio-frequency plasma and an arc jet. The reactant, SiCl{sub 4}, was injected into an arc jet and completely decomposed in a hybrid plasma, and the second reactant, CG{sub 4} and/or NH{sub 3}, was injected into the tail flame through multistage ring slits. In the case of ultrafine Si{sub 3}N{sub 4} powder synthesis, reaction efficiency increased significantly by multistage injection compared to single-stage injection. The most striking result is that amorphous Si{sub 3}N{sub 4} with a nitrogen content of about 37 wt% and a particle size of 10 to 30 nm could be prepared successfully even at the theoretical NH{sub 3}/SiCl{sub 4} molar ratio of {approximately} 1.33, although the crystallinity depended on the NH{sub 3}/SiCl{sub 4} molar ratio and the injection method. For the preparation of Si{sub 3}N{sub 4} + SiC mixed powders, the N/C composition ratio and particle size could be controlled not only be regulating the flow rate of the NH{sub 3} and CH{sub 4} reactant gases and the H{sub 2} quenching gas, but also by adjusting the reaction space. The results of this study provide sufficient evidence to suggest that multistage injection is very effective for regulating the condensation process of fine particles in a plasma tail flame.

  11. Towards long-lasting antibacterial stainless steel surfaces by combining double glow plasma silvering with active screen plasma nitriding.

    PubMed

    Dong, Y; Li, X; Tian, L; Bell, T; Sammons, R L; Dong, H

    2011-01-01

    Antibacterial surface modification of biomedical materials has evolved as a potentially effective method for preventing bacterial proliferation on the surfaces of devices. However, thin antibacterial coatings or modified layers can be easily worn down when interacting with other surfaces in relative motion, thus leading to a low durability of the antibacterial surface. To this end, novel biomaterial surfaces with antibacterial Ag agents and a wear-resistant S-phase have been generated on stainless steel by duplex plasma silvering-nitriding techniques for application to load-bearing medical devices. The chemical composition, microstructure, surface topography, roughness and wettability of SS surfaces were characterised using glow discharge optical emission spectroscopy, energy-dispersive spectroscopy/wavelength dispersive spectrometry (WDS), X-ray diffraction, atomic force microscopy and a contact angle goniometer. Optimal surface design for high antimicrobial activity and prolonged durability has been achieved, as evidenced by rapid bacterial killing rates (within 6h), an ultra hard matrix (875 ± 25 Hv), high load-bearing capacity (critical load 37 N) and excellent wear resistance (wear rate 4.9 × 10⁻⁶ mm³ m⁻¹). Ag embedded in the hard substrate of fcc compounds M(4)N (M=Fe, Cr, Ag, etc.) and the expanded fcc nitrogen S-phase shows deep infiltration of 6 ± 1 μm, and provides bactericidal activity against both Gram-negative Escherichia coli NCTC 10418 and Gram-positive Staphylococcus epidermidis NCTC 11047 of over 97% and 90%, respectively, within 6h. The presence of silver in the surface before and after scratching under a progressive load applied up to 60 N using a diamond stylus was confirmed by WDS. PMID:20727993

  12. Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique

    NASA Astrophysics Data System (ADS)

    Wang, L.; Reehal, H. S.; Martínez, F. L.; San Andrés, E.; del Prado, A.

    2003-07-01

    Amorphous hydrogenated silicon nitride films have been deposited by the electron cyclotron resonance plasma technique, using N2 and SiH4 as precursor gases. The gas flow ratio, deposition temperature and microwave power have been varied in order to study their effect on the properties of the films, which were characterized by Rutherford back-scattering spectrometry, elastic recoil detection analysis (ERDA), Fourier transform infrared spectroscopy and ellipsometry. All samples show N/Si ratios near or above the stoichiometric value (N/Si = 1.33). The hydrogen content determined from ERDA measurements is significantly higher than the amount detected by infrared spectroscopy, evidencing the presence of non-bonded H. As the N2/SiH4 gas flow ratio is increased (by decreasing the SiH4 partial pressure), the Si content decreases and the N-H concentration increases, while the N content remains constant, resulting in an increase of the N/Si ratio. The decrease of the Si content causes a decrease of the refractive index and the density of the film, while the growth ratio also decreases due to the limiting factor of the SiH4 partial pressure. The infrared Si-N stretching band shifts to higher wavenumbers as the N-H concentration increases. The increase of deposition temperature promotes the release of H, resulting in a higher incorporation of N and Si into the film and a decrease of the N/Si ratio. The effect of increasing the microwave power is analogous to increasing the N2/SiH4 ratio, due to the increase in the proportion of nitrogen activated species.

  13. Influence of substrate bias on practical adhesion, toughness, and roughness of reactive dc-sputtered zirconium nitride films

    NASA Astrophysics Data System (ADS)

    Chen, Cheng-Shi; Liu, Chuan-Pu; Yang, Heng-Ghieh; Tsao, C.-Y. A.

    2004-09-01

    The ZrN films were grown on Si (100) substrates using dc magnetron sputtering where the substrate bias was varied from -45 to 50 V. In this article, the film/substrate practical adhesion of the ZrN films were measured by scratch testing while the hardness, elastic modulus, and fracture toughness were measured by nanoindentation. The structures and morphologies of the ZrN films were analyzed using scanning electron microscopy, atomic force microscopy, and x-ray diffraction. The results indicate that the introduction of either negative or positive bias results in the degradation of the practical adhesion properties, while the films under zero bias exhibit the best adhesion. In addition, positive bias results in the increase in both the hardness and elastic modulus, while negative bias enhances the hardness and toughness of the ZrN thin films. The mechanical properties are greatly influenced by substrate bias and can be correlated to microstructure variations. The detailed mechanisms accounted for these phenomena are discussed.

  14. Silicon- and aluminum-nitride films deposited by reactive low-voltage ion plating and reactive dc-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Vogl, G. W.; Monz, K. H.; Nguyen, Quang D.; Huter, Michael; Rille, Eduard P.; Pulker, Hans K.

    1994-11-01

    In this work the properties of Si3N4 and AIN thin films deposited onto unheated substrates by Reactive Low Voltage Ion Plating (RLVIP) and Reactive DC-Magnetron Sputtering (RDCMS) were investigated. In both experimental setups pure silicon and aluminum were used as starting materials. Working and reactive gas were argon and nitrogen respectively. All Si3N4 films showed amorphous structure in X-ray and electron diffraction whereas AIN films were found to be polycrystalline and could be indexed to the bulk hexagonal AIN lattice. The values of the film refractive index at 550 nm are 2.08 for RLVIP Si3N4, 2.12 for RLVIP AIN, 2.02 for RDCMS Si3N4, and 1.98 or 2.12 for AIN depending on the total pressure in the range of 8 E - 1 Pa and 1 E - 1 Pa during the process. The high optical transmission region for the Si3N4 films lies between 0.23 and 9.5 micrometers , and for AIN films between 0.2 and 12.5 micrometers . Purity and composition were measured by electron microprobe, infrared transmission, nuclear reactions, elastic recoil detection analysis and Rutherford backscattering spectroscopy. Transmission electron micrographs of Pt-C replicas of fracture cross sections of the films show their different microstructure and surface topography. Environmental tests proved the RLVIP Si3N4 films to be very hard, of high density and of strong adherence to glass.

  15. Effect of deposition parameters on structural and mechanical properties of niobium nitride synthesized by plasma focus device

    NASA Astrophysics Data System (ADS)

    Siddiqui, Jamil; Hussain, Tousif; Ahmad, Riaz; Khalid, Nida

    2015-06-01

    Effects of deposition angle and axial distance on the structural and mechanical properties of niobium nitride synthesized by a dense plasma focus (DPF) system are studied. The x-ray diffraction (XRD) confirms that the deposition parameters affect the growth of multi-phase niobium nitride. Scanning electron microscopy (SEM) shows the granular surface morphology with strong thermally assisted coagulation effects observed at the 5-cm axial distance. The non-porous granular morphology observed at the 9-cm distance along the anode axis is different from those observed at deposition angles of 10° and 20°. Energy dispersive x-ray (EDX) spectroscopy reveals the maximum nitrogen content at the shortest (5 cm) axial position. Atomic force microscopy (AFM) exhibits that the roughness of coated films varies for coatings synthesized at different axial and angular positions, and the Vickers micro-hardness test shows that a maximum hardness value is (08.44 ± 0.01) GPa for niobium nitride synthesized at 5-cm axial distance, which is about 500% more than that of a virgin sample. Project supported by the HEC, Pakistan.

  16. Influence of a transverse magnetic field on arc root movements in a dc plasma torch: Diamagnetic effect of arc column

    SciTech Connect

    Kim, Keun Su

    2009-03-23

    The effect of a transverse magnetic field on the anodic arc root movement inside a dc plasma torch has been investigated. The arc voltage fluctuation, which represents the degree of the arc instability, was reduced to 28.6% of the original value and the high frequency components in the voltage signal also decreased in their magnitudes. The inherent arc instability in a dc thermal plasma torch seems to be suppressed by a diamagnetic effect of the arc column. Furthermore, the measured voltage wave forms indicated that the arc root attachment mode would be controllable by a transverse magnetic field.

  17. Low Temperature Deposition of β-phase Silicon Nitride Using Inductively Coupled Plasma Chemical Vapor Deposition Technique

    NASA Astrophysics Data System (ADS)

    Kshirsagar, Abhijeet; Duttagupta, S. P.; Gangal, S. A.

    2010-12-01

    Silicon nitride (SiN) films have been deposited at low temperature (≤100° C), by Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD) technique. The chemical and physical properties of deposited SiN films such as refractive index, deposition rate, and film stress have been measured. Additional structural characterization is performed using X-ray diffraction (XRD) and Micro Raman Spectroscopy. It is found that the films obtained are of low stress and have β-phase. To the best of authors knowledge such low temperature, low stress, β-phase SiN films deposition using ICPCVD are being reported for the first time.

  18. Doppler broadening of atomic-hydrogen lines in DC and capacitively coupled RF plasmas

    NASA Astrophysics Data System (ADS)

    Akhtar, Kamran; Scharer, J. E.; Mills, R. L.

    2007-10-01

    The extraordinary broadening of Balmer lines of hydrogen admixed with Ar or He as opposed to Xe in DC glow and capacitively coupled rf discharges is studied over a wide range of pressure and gas compositions. High-resolution optical emission spectroscopy is performed parallel to (end-on) and perpendicular (side-on) to the electrode axis along with Langmuir probe measurements of plasma density and electron temperature for the RF capacitive discharge case. A broad and symmetric (Gaussian) Balmer emission line corresponding to 20-60 eV hydrogen atom temperatures is observed in Ar/H2 and He/H2 plasmas. Energy is transferred selectively to hydrogen atoms whereas the atoms of admixed He and Ar gases remain cold (<0.5 eV). In the field acceleration model [e.g., Cvetanovic et. al. J. App. Phys., Vol. 97, 033302-1, 2005] there apparently is no preferred species to which energy is coupled and according to the model one should observe enhanced temperatures of hydrogen and helium atoms in He/H2 discharges where the atomic mass is more comparable (4:1). We also briefly examine the experimental results using the Resonance Transfer Model of hydrogen heating [Mills et. al IEEE Trans. Plasma Sci., 31, 338, 2003] as the source of broadening.

  19. Impact of substrate nitridation on the growth of InN on In2O3(111) by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cho, YongJin; Sadofev, Sergey; Fernández-Garrido, Sergio; Calarco, Raffaella; Riechert, Henning; Galazka, Zbigniew; Uecker, Reinhard; Brandt, Oliver

    2016-04-01

    We study the growth of InN films on In2O3(111) substrates by plasma-assisted molecular beam epitaxy under N excess. InN films deposited directly on In2O3(111) exhibit a strongly faceted morphology. A nitridation step prior to growth is found to convert the In2O3(111) surface to InN{0001}. The morphology of InN films deposited on such nitridated In2O3(111) substrates is characteristic for growth by instable step-flow and is thus drastically different from the three-dimensional growth obtained without nitridation. We show that this change originates from the different polarity of the films: while InN films deposited directly on In2O3(111) are In-polar, they are N-polar when grown on the nitridated substrate.

  20. Design and installation of DC plasma reactor for SiC nanoparticle production

    NASA Astrophysics Data System (ADS)

    Yu, I. K.; Rhee, J. H.; Cho, S.; Yoon, H. K.

    2009-04-01

    In order to get the high quality SiC nanopowders, a DC plasma reactor system with adjustable torch has been developed. SiC nanopowders were synthesized using this system and the synthesized primary particles have nearly spherical structures, mostly β-SiC phase with a particle size of 10-30 nm. Larger aggregate particles have been produced in our system probably due to longer particle growth times and faster collisions. The synthesized particles collected from the reactor wall and cyclone bottom have some free silicon and free carbon. To produce high quality silicon carbide nanopowders, it is highly necessary to improve the experimental conditions such as lower system pressures, shorter residence time, and higher quenching rates during powder synthesis.

  1. Observations of the long-term plasma evolution in a pulsed dc magnetron discharge

    NASA Astrophysics Data System (ADS)

    Bäcker, H.; Bradley, J. W.

    2005-08-01

    Using a time-resolved Langmuir probe the temporal evolution of the plasma parameters in a pulsed dc magnetron discharge was determined for a number of positions both inside and outside the magnetic trap. The discharge was operated at a pulse frequency of 2 kHz with a 50% duty cycle, a titanium target and at a fixed argon pressure of 0.53 Pa. The electron density, ne, electron temperature, Te, plasma potential, Vp and floating potential, Vf have typically two-fold characteristic decay and rise times, which increase with distance from the target. In the magnetic trap, the initial ne decay rate is ~18 µs, lengthening to 120 µs. However, in the plasma bulk, this figure is about 250 µs at all times during the plasma decay. The ne decay rate on the discharge centreline is somewhat slower at about 600 µs. During the transition from duty on to off phases a 'density-wave', initiated at the cathode, is observed to propagate downstream at about 1000 m s-1 (a velocity close to the calculated ion acoustic speed). The results reveal a complex picture in terms of the electron energies. In the off time, the electrons are characterized by a single Maxwellian distribution function and the initial Te decay times are between 6 and 10 µs. However, these lengthen dramatically to values between 600 and 800 µs depending on position to give a final Te value of about 0.2-0.3 eV. In the on time, and outside the magnetic trap, bi-Maxwellian electrons are observed with Teh = 4-6 eV and Tec = 1-2 eV. A simple model, taking into account the effect of the magnetic field on electron collection at the probe, has been used to show that the relative density of hot electrons is as high as 40%. On magnetic field lines that connect with the walls, bi-Maxwellian electrons exist during the whole on period; however, on the centreline their temperatures converge after about 100 µs to form a single distribution with Te ~ 3 eV. Plasma potential measurements show that the strong axial electric fields in

  2. Study of jet fluctuations in DC plasma torch using high speed camera

    NASA Astrophysics Data System (ADS)

    Tiwari, Nirupama; Sahasrabudhe, S. N.; Joshi, N. K.; Das, A. K.

    2010-02-01

    The power supplies used for the plasma torches are usually SCR controlled and have a large ripple factor. This is due to the fact that the currents in the torch are of the order of hundreds of amperes which prohibit effective filtering of the ripple. The voltage and current vary as per the ripple in the power supply and causes plasma jet to fluctuate. To record these fluctuations, the jet coming out from a D.C. plasma torch operating at atmospheric pressure was imaged using high speed camera at the rate of 3000 frame per second. Light emitted from a well defined zone in the plume was collected using an optical fibre and a Photo Multiplier Tube. Current, voltage and PMT signals were recorded simultaneously using a digital storage oscilloscope (DSO). The fast camera recorded the images for 25 ms and the starting pulse from the camera was used to trigger the DSO for recording voltage, current and optical signals. Each image of the plume recorded by the fast camera was correlated with the magnitude of the instantaneous voltage, current and optical signal. It was observed that the luminosity and length of the plume varies as per the product of instantaneous voltage and current i.e. electrical power fed to plasma torch. The experimental runs were taken with different gas flow rates and electrical powers. The images were analyzed using image processing software and constant intensity contours of images were determined. Further analysis of the images can provide a great deal of information about dynamics of the jet.

  3. Tribological evaluation of diamond coating on pure titanium in comparison with plasma nitrided titanium and uncoated titanium

    SciTech Connect

    Yan, B.; Loh, N.L.; Fu, Y.; Sun, C.Q.; Hing, P.

    1999-12-01

    Titanium alloys are characterized by poor tribological properties, and the traditional use of titanium alloys has been restricted to nontribological applications. The deposition of a well adherent diamond coating is a promising way to solve this problem. In this study, the tribological properties of diamond-coated titanium were studied using a pin-on-disk tribometer, and the results were compared with those of pure titanium and plasma nitrided titanium. The tribological behavior of pure titanium was characterized by high coefficient of friction and rapid wear of materials. Plasma nitriding improved the wear resistance only under low normal load; however, this hardened layer was not efficient in improving the wear resistance and the friction properties under high normal load. Diamond coating on pure titanium improved the wear resistance of titanium significantly. Surface profilometry measurement indicated that little or no wear of the diamond coating occurred under the test conditions loads. The roughness of the diamond coating was critical because it controlled the amount of abrasive damage on the counterface. Reducing the surface roughness by polishing led to the reductions in both the friction and wear of the counterface.

  4. ANALYSIS OF A WASTEWATER FOR SEVEN PRIORITY POLLUTANT ELEMENTS BY D.C. ARGON PLASMA EMISSION SPECTROSCOPY

    EPA Science Inventory

    This limited project was conducted to determine the usefulness of the D.C. argon plasma for the analysis of wastewater. Seven priority pollutant elements, arsenic (As), beryllium (Be), cadmium (Cd), chromium (Cr), nickel (Ni), lead (Pb), and thallium (Tl), were selected for use i...

  5. Synthesis of aluminum nitride powders from a plasma-assisted ball milled precursor through carbothermal reaction

    SciTech Connect

    Liu, Zhi-jie; Dai, Le-yang; Yang, De-zheng; Wang, Sen; Zhang, Bao-jian; Wang, Wen-chun; Cheng, Tie-han

    2015-01-15

    Highlights: • A novel and high efficiency synthesizing AlN powders method combining mechanical ball milling and DBDP has been developed. • The particle size, the crystallite size, the lattice distortion, the morphology of Al{sub 2}O{sub 3} powders, and the AlN conversion rate are investigated and compared under the ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP. • The ball milled Al{sub 2}O{sub 3} powders with DBDP have small spherical structure morphology with very fine particles size and high specific surface area, which result in a higher chemical efficiency and a higher AlN conversion rate at lower thermal temperature. - Abstract: In this paper, aluminum nitride (AlN) powers have been produced with a novel and high efficiency method by thermal annealing at 1100–1600 °C of alumina (Al{sub 2}O{sub 3}) powders which were previously ball milled for various time up to 40 h with and without the assistant of dielectric barrier discharge plasma (DBDP). The ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP and the corresponding synthesized AlN powers are characterized by X-ray diffraction, scanning electron microscope, and transmission electron microscopy. From the characteristics of the ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP, it can be seen that the ball milled Al{sub 2}O{sub 3} powders with DBDP have small spherical structure morphology with very fine particles size and high specific surface area, which result in a higher chemical efficiency and a higher AlN conversion rate at lower thermal temperature. Meanwhile, the synthesized AlN powders can be known as hexagonal AlN with fine crystal morphology and irregular lump-like structure, and have uniform distribution with the average particle size of about between 500 nm and 1000 nm. This provides an important method for fabricating ultra fine powders and synthesizing nitrogen compounds.

  6. Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation

    NASA Astrophysics Data System (ADS)

    Kusumandari; Takeuchi, Wakana; Kato, Kimihiko; Shibayama, Shigehisa; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2012-01-01

    We have investigated the effects of light radiation during plasma nitridation on the electrical properties of an Al2O3/Ge gate stack structure using the pallet for plasma evaluation (PAPE) technique. From the capacitance-voltage characteristics, the flatband voltage shift due to fixed oxide charges significantly increases after light exposure with an energy higher than 7.5 eV. In addition, the density of trapped charges near the interface and the interface state density (Dit) also significantly increase after light exposure with an energy over 11.3 eV. The net density of positive fixed oxide charges, the density of trapped charges near the interface, and Dit can be reduced by post-metallization annealing (PMA) in N2 ambient at 300 °C.

  7. Excitation wavelength dependence of water-window line emissions from boron-nitride laser-produced plasmas

    SciTech Connect

    Crank, M.; Harilal, S. S.; Hassan, S. M.; Hassanein, A.

    2012-02-01

    We investigated the effects of laser excitation wavelength on water-window emission lines of laser-produced boron-nitride plasmas. Plasmas are produced by focusing 1064 nm and harmonically generated 532 and 266 nm radiation from a Nd:YAG laser on BN target in vacuum. Soft x-ray emission lines in the water-window region are recorded using a grazing-incidence spectrograph. Filtered photodiodes are used to obtain complementary data for water-window emission intensity and angular dependence. Spectral emission intensity changes in nitrogen Ly-{alpha} and He-{alpha} are used to show how laser wavelength affects emission. Our results show that the relative intensity of spectral lines is laser wavelength dependent, with the ratio of Ly-{alpha} to He-{alpha} emission intensity decreasing as laser wavelength is shortened. Filtered photodiode measurements of angular dependence showed that 266 and 532 nm laser wavelengths produce uniform emission.

  8. Effect of a floating circular aperture on a dc glow discharge dusty plasma

    NASA Astrophysics Data System (ADS)

    Heinrich, Jonathon R.; Kim, Su-Hyun; Merlino, Robert L.

    2009-11-01

    We have investigated novel effects observed when a floating aperture, either 6 mm or 8 mm in diameter, is placed 1-2 cm in front of an anode disk (4 cm diameter) that is used to form a dc glow discharge dusty plasma. Dust is incorporated into the anode glow plasma from a tray located below the anode which contained kaolin powder. The glow discharge traps particles with an average size of 1 micron. When the aperture is placed in front of the disk, well-defined pear-shaped or spherical dust clouds are formed, depending on the diameter of the aperture and its distance from the anode. The dust interacts with the aperture through the potential structure associated with the floating (negative) plate in which the aperture is located. The dust cloud is imaged using a CCD camera and a thin sheet of 532 nm laser light. Some of the effects observed include: outwardly expanding spherical dust acoustic waves and shocks, dust rotation around a void formed at the aperture, and a dust/discharge instability in which the discharge is periodically quenched and reignited while the dust cloud expands and contracts, with the dust retaining a residual charge.

  9. Growth of ultrananocrystalline diamond film by DC Arcjet plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chen, G. C.; Li, B.; Yan, Z. Q.; Liu, J.; Lu, F. X.; Ye, H.

    2012-06-01

    Self-standing diamond films were grown by DC Arcjet plasma enhanced chemical vapor deposition (CVD). The feed gasses were Ar/H2/CH4, in which the flow ratio of CH4 to H2 (F/F) was varied from 5% to 20%. Two distinct morphologies were observed by scanning electron microscope (SEM), i.e. the "pineapple-like" morphology and the "cauliflower-like" morphology. It was found that the morphologies of the as-grown films are strongly dependent on the flow ratio of CH4 to H2 in the feed gasses. High resolution transmission electron microscope (HRTEM) survey results revealed that there were nanocrystalline grains within the "pineapple-like" films whilst there were ultrananocrystalline grains within "cauliflower-like" films. X-ray diffraction (XRD) results suggested that (110) crystalline plane was the dominant surface in the "cauliflower-like" films whilst (100) crystalline plane was the dominant surface in the "pineapple-like" films. Raman spectroscopy revealed that nanostructured carbon features could be observed in both types of films. Plasma diagnosis was carried out in order to understand the morphology dependent growth mechanism. It could be concluded that the film morphology was strongly influenced by the density of gas phases. The gradient of C2 radical was found to be different along the growth direction under the different growth conditions.

  10. Effect of plasma parameters on characteristics of silicon nitride film deposited by single and dual frequency plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Sahu, B. B.; Yin, Yongyi; Han, Jeon G.

    2016-03-01

    This work investigates the deposition of hydrogenated amorphous silicon nitride films using various low-temperature plasmas. Utilizing radio-frequency (RF, 13.56 MHz) and ultra-high frequency (UHF, 320 MHz) powers, different plasma enhanced chemical vapor deposition processes are conducted in the mixture of reactive N2/NH3/SiH4 gases. The processes are extensively characterized using different plasma diagnostic tools to study their plasma and radical generation capabilities. A typical transition of the electron energy distribution function from single- to bi-Maxwellian type is achieved by combining RF and ultra-high powers. Data analysis revealed that the RF/UHF dual frequency power enhances the plasma surface heating and produces hot electron population with relatively low electron temperature and high plasma density. Using various film analysis methods, we have investigated the role of plasma parameters on the compositional, structural, and optical properties of the deposited films to optimize the process conditions. The presented results show that the dual frequency power is effective for enhancing dissociation and ionization of neutrals, which in turn helps in enabling high deposition rate and improving film properties.

  11. Electrical characterization of rapid thermal nitrided and reoxidized plasma-enhanced chemical-vapor-deposited silicon dioxide metal-oxide-silicon structures

    NASA Astrophysics Data System (ADS)

    Ang, S. S.; Shi, Y. J.; Brown, W. D.

    1994-12-01

    The electrical characteristics of rapid thermal nitrided and reoxidized plasma-enhanced chemical-vapor-deposited (PECVD) silicon dioxide metal-oxide-silison (MOS) structures were investigated. Both nitridation temperature and time affect the properties of the MOS structures as revealed by capacitance-voltage (C-V) characteristics. Nitridation at 1000 C for 60 s followed by reoxidtion for 60 s at 1000 C in an oxygen/ nitrogen ambient was found to be superior to the same nitridation followed by reoxidation in pure oxygen. Typical vlaues of fixed charge and interface state densities for devices subjected to nitridation and reoxidation in a mixture of oxygen and nitrogen were 4 x 10(exp 10) cm(exp -2) and 7 x 10(exp 10) eV(exp -1) cm(exp -2), respectively. Avalanche electron injection using electric field of 3-5 MV/cm produced negative shifts in flatband voltage for low fluence levels and positive flatband voltage shifts for larger fluence levels. Furthermore, the magnitudes of both positive and negative shifts and the electron fluence level at which turnaround occurs increase with electric field. However, independent of the electric field, the flatband voltage saturates very close to its preinjection vlaue. These results strongly suggest that device quality MOS dielectrics can be realized by nitridation/reoxidation of PECVD oxide.

  12. Kinetic studies of NO formation in pulsed air-like low-pressure dc plasmas

    NASA Astrophysics Data System (ADS)

    Hübner, M.; Gortschakow, S.; Guaitella, O.; Marinov, D.; Rousseau, A.; Röpcke, J.; Loffhagen, D.

    2016-06-01

    The kinetics of the formation of NO in pulsed air-like dc plasmas at a pressure of 1.33 mbar and mean currents between 50 and 150 mA of discharge pulses with 5 ms duration has been investigated both experimentally and by self-consistent numerical modelling. Using time-resolved quantum cascade laser absorption spectroscopy, the densities of NO, NO2 and N2O have been measured in synthetic air as well as in air with 0.8% of NO2 and N2O, respectively. The temporal evolution of the NO density shows four distinct phases during the plasma pulse and the early afterglow in the three gas mixtures that were used. In particular, a steep density increase during the ignition phase and after termination of the discharge current pulse has been detected. The NO concentration has been found to reach a constant value of 0.57× {{10}14}~\\text{molecules}~\\text{c}{{\\text{m}}-3} , 1.05× {{10}14}~\\text{molecules}~\\text{c}{{\\text{m}}-3} , and 1.3× {{10}14}~\\text{molecules}~\\text{c}{{\\text{m}}-3} for mean plasma currents of 50 mA, 100 mA and 150 mA, respectively, in the afterglow. The measured densities of NO2 and N2O in the respective mixture decrease exponentially during the plasma pulse and remain almost constant in the afterglow, especially where the admixture of NO2 has a remarkable impact on the NO production during the ignition. The numerical results of the coupled solution of a set of rate equations for the various heavy particles and the time-dependent Boltzmann equation of the electrons agree quite well with the experimental findings for the different air-like plasmas. The main reaction processes have been analysed on the basis of the model calculations and the remaining differences between the experiment and modelling especially during the afterglow are discussed.

  13. Terahertz radiation generation by beating of two super Gaussian lasers in plasma having static dc electric field

    NASA Astrophysics Data System (ADS)

    Hussain, Saba; Singh, Ram Kishor; Sharma, R. P.

    2016-07-01

    This paper presents a scheme for the generation of high power terahertz radiation by the beating of two femtosecond super Gaussian lasers in plasma having dc electric field in the transverse direction. In this mechanism, a strong nonlinear ponderomotive force acts on the plasma electrons at the frequency difference of the two lasers ( ω 1 - ω 2 ) that imparts a nonlinear oscillatory velocity to plasma electrons which further result in the generation of a nonlinear current at this difference frequency (lying in THz domain). The dynamical equations governing the generation of THz waves have been solved semi-analytically; the result shows that the amplitude of the generated waves is considerably enhanced in the presence of dc electric field, and the index of super Gaussian beams also plays a keen role in governing the yield of THz waves.

  14. The Structure-Phase Compositions of Powder Ni - based Coatings after Modification by DC Plasma Jet Irradiation

    NASA Astrophysics Data System (ADS)

    Alontseva, D.; Ghassemieh, E.

    2015-10-01

    This paper presents the results of investigation of the structure-phase compositions of Ni-based coatings deposited by plasma jet on steel substrates after modification by direct current (DC) plasma jet irradiation. Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and X-ray Diffraction (XRD) are used in the current study. The phase structures and morphology of precipitation of strengthening phases from solid solution are defined. The irradiation of the coatings leads to the evolution of the structural-phase state of coatings: an increase in the volume fraction of hardening intermetallic phases, the formation of sufficiently homogeneous fine-grained structure in the irradiated coatings. There is a mutual penetration of the substrate main element Fe into the coating and base coating elements Ni into the substrate as a result of the coating treatment by a pulse DC plasma jet.

  15. Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy

    NASA Technical Reports Server (NTRS)

    Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    A simple analysis is provided to determine the characteristics of an electron cyclotron resonance (ECR) plasma source for the generation of active nitrogen species in the molecular beam epitaxy of III-V nitrides. The effects of reactor geometry, pressure, power, and flow rate on the dissociation efficiency and ion flux are presented. Pulsing the input power is proposed to reduce the ion flux.

  16. Effect of N{sub 2} + H{sub 2} gas mixtures in plasma nitriding on tribological properties of duplex surface treated steels

    SciTech Connect

    Taktak, Sukru Gunes, Ibrahim; Ulker, Sukru; Yalcin, Yilmaz

    2008-12-15

    Thermo-reactive diffusion chromizing followed by pulsed plasma nitriding were carried out on AISI 52100 and 8620 bearing steels. The chromized samples were pulse-plasma nitrided for 5 h at 500 deg. C in various N{sub 2}-H{sub 2} gas mixtures. The coated steels were characterized using scanning electron microscopy, X-ray diffraction and microhardness testing. The unlubricated wear behaviors of only chromized and duplex treated steels were investigated in ball-on-disc system tests at room temperature. X-ray diffraction patterns of the duplex treated samples containing H{sub 2} indicated the formation of dominant CrN and Cr{sub 2}N nitrides as well as the formation of Cr{sub 3}C{sub 2} and Cr{sub 7}C{sub 3} carbides. Gas mixtures in the plasma nitriding, which was performed after chromizing, have a significant influence on the wear rate of the duplex treated steels. The wear and friction tests showed that the lowest friction coefficient and wear rates were observed for the samples duplex treated in a 50%N{sub 2} +50%H{sub 2} plasma. Conversely, the lowest wear resistance was observed on the samples duplex treated in a gas mixture of 75%N{sub 2} + 25%H{sub 2}, probably due to formation of a hard and brittle layer.

  17. Study of DC discharge plasma polymerization kinetics, film properties and applications and initial study of silica powder surface modification by RF plasma polymerization

    NASA Astrophysics Data System (ADS)

    Guo, Sheyu

    1998-09-01

    In this work, two kinds of plasma polymerization for surface modification are discussed. In part-I, DC plasma polymerization is investigated for film properties, film growth mechanism and film application. The monomers heaxamethyldisiloxane (HMDSO) and pyrrole were selected to study the deposition rates change with discharge parameters such as pressure, flow rate, power, discharge current density. Structures and properties of film deposited at extreme conditions (high power/low pressure or low power/high pressure) were studied with FT-IR, SEM, TOF-SIMS, AIM, surface energy measurement and tribology test. This work also investigated DC plasma polymerization kinetics by combining plasma parameters with film deposited rate at different conditions. Both single and double Langmuir probes were used to measure the plasma parameters in pulsed power and continuous discharges. Plasma density and electron temperature are reported. A DC plasma polymerization kinetic model is Proposed based on the experimental data and a best-fit mathematical method. DC plasma polymerization application was the other object of this study. Cold-rolled steel and copper were coated with pyrrole and HMDSO, respectively. Corrosion rate were obtained from electrochemical polarization methods, and tests in humidity chamber directly. Various monomers were used to change the substrate surface energy. Hydrophilic and hydrophobic surface were achieved respectively by different monomers. A water-soluble film was obtained with acrylic acid in mild plasma conditions. In part-II, a initial study of powder surface modification has been done. The aim of this work was to investigate the possibility of changing powder surface properties with plasma-polymerized coatings. RF inductive plasma was used as a source to excite plasma polymerization for powder treatment. Plasma-polymerized pyrrole films were deposited on silica surface. Several techniques such as SEM, EDX, TOF-SIMS, FT-IF, DSC&TGA, and surface energy

  18. Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

    NASA Astrophysics Data System (ADS)

    Glavin, Nicholas R.; Muratore, Christopher; Jespersen, Michael L.; Hu, Jianjun; Fisher, Timothy S.; Voevodin, Andrey A.

    2015-04-01

    Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B+, B*, N+, N*, and molecular species including N2*, N2+, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N+ ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N+ ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good thicknesses uniformity over macroscopic areas.

  19. Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

    SciTech Connect

    Glavin, Nicholas R. E-mail: andrey.voevodin@us.af.mil; Muratore, Christopher; Jespersen, Michael L.; Hu, Jianjun; Fisher, Timothy S.; Voevodin, Andrey A. E-mail: andrey.voevodin@us.af.mil

    2015-04-28

    Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B{sup +}, B*, N{sup +}, N*, and molecular species including N{sub 2}*, N{sub 2}{sup +}, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N{sup +} ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N{sup +} ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good

  20. Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

    SciTech Connect

    Wan, Yimao; Thomson, Andrew F.; Cuevas, Andres; McIntosh, Keith R.

    2015-01-26

    Recombination at silicon nitride (SiN{sub x}) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH{sub 3}) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH{sub 3} plasma exposure causes (i) an increase in the density of Si≡N{sub 3} groups in both SiN{sub x} and a-Si films, (ii) a reduction in refractive index and permittivity, (iii) an increase in the density of defects at the SiN{sub x}/c-Si interface, and (iv) a reduction in the density of positive charge in SiN{sub x}. The changes in recombination and thin film properties are likely due to an insertion of N–H radicals into the bulk of SiN{sub x} or a-Si. It is therefore important for device performance to minimize NH{sub 3} plasma exposure of SiN{sub x} or a-Si passivating films during subsequent fabrication steps.

  1. Magnetic properties of single crystalline expanded austenite obtained by plasma nitriding of austenitic stainless steel single crystals.

    PubMed

    Menéndez, Enric; Templier, Claude; Garcia-Ramirez, Pablo; Santiso, José; Vantomme, André; Temst, Kristiaan; Nogués, Josep

    2013-10-23

    Ferromagnetic single crystalline [100], [110], and [111]-oriented expanded austenite is obtained by plasma nitriding of paramagnetic 316L austenitic stainless steel single crystals at either 300 or 400 °C. After nitriding at 400 °C, the [100] direction appears to constitute the magnetic easy axis due to the interplay between a large lattice expansion and the expected decomposition of the expanded austenite, which results in Fe- and Ni-enriched areas. However, a complex combination of uniaxial (i.e., twofold) and biaxial (i.e., fourfold) in-plane magnetic anisotropies is encountered. It is suggested that the former is related to residual stress-induced effects while the latter is associated to the in-plane projections of the cubic lattice symmetry. Increasing the processing temperature strengthens the biaxial in-plane anisotropy in detriment of the uniaxial contribution, in agreement with a more homogeneous structure of expanded austenite with lower residual stresses. In contrast to polycrystalline expanded austenite, single crystalline expanded austenite exhibits its magnetic easy axes along basic directions. PMID:24028676

  2. Tribological behaviors of diamond-like carbon coatings on plasma nitrided steel using three BN-containing lubricants

    NASA Astrophysics Data System (ADS)

    Jia, Zheng-feng; Wang, Peng; Xia, Yan-qiu; Zhang, Hao-bo; Pang, Xian-juan; Li, Bin

    2009-04-01

    In this work, diamond-like carbon (DLC) coatings were deposited on plasma nitrided AISI 1045 steel by magnetron sputtering. Three BN-containing additives and molybdenum dithiocarbamate (MoDTC) were added to poly-alpha-olefin (PAO) as additives. The additive content (mass fraction) in PAO was fixed at 0.5 wt%. The friction and wear characters of DLC coatings on nitrided steel discs sliding against AISI 52100 steel balls were tested under the lubricated conditions. It was found that borate esters have a higher load carrying capacity and much better anti-wear and friction-reducing ability than that of MoDTC. X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) were employed to explore the properties of the worn surface and the mechanism of friction and wear. According to the XPS analysis, the adsorbed organic N-containing compounds and BN are, possibly, the primary reason for the novel borate esters to possess a relatively constant coefficient of friction and lower wear rate. On the other hand, possibly, the MoDTC molecules break down during sliding and produce many Mo-oxides, and then the Mo-oxides destroy the DLC coating because of its sharp edge crystalline solid structure. After destroying the DLC coating, the MoDTC react with metals and form MoS 2 tribofilm, and decrease coefficient of friction of rubbing pairs.

  3. Plasma-deposited germanium nitride gate insulators for indium phosphide metal-insulator-semiconductor field-effect transistors

    NASA Technical Reports Server (NTRS)

    Johnson, Gregory A.; Kapoor, Vik J.

    1991-01-01

    Plasma-deposited germanium nitride was investigated for the first time as a possible gate insulator for InP compound semiconductor metal-insulator-semiconductor FET (MISFET) technology. The germanium nitride films were successfully deposited in a capacitively coupled parallel plate reactor at 13.56 MHz operation using GeH4/N2/NH3 and GeH4/N2 mixtures as reactant gases. The former process produced better quality films with enhanced uniformity, increased deposition rates, and increased resistivity. The breakdown field strength of the films was greater than 10 to the 6th V/cm. Auger electron spectroscopy did not indicate significant chemical composition differences between the two processes. For MISFETs with 2-micron channel lengths fabricated on InP, the device transconductance and threshold voltage for the GeH4/N2/NH3 process were 17 mS/mm and -3.6 V, respectively. The drain-source breakdown voltages were greater than 10 V.

  4. Effect of active screen plasma nitriding pretreatment on wear behavior of TiN coating deposited by PACVD technique

    NASA Astrophysics Data System (ADS)

    Raoufi, M.; Mirdamadi, Sh.; Mahboubi, F.; Ahangarani, Sh.; Mahdipoor, M. S.; Elmkhah, H.

    2012-08-01

    Titanium based alloys are used extensively for improving wear properties of different parts due to their high hardness contents. Titanium nitride (TiN) is among these coatings which can be deposited on surface using various techniques such as CVD, PVD and PACVD. Their weak interface with substrate is one major drawback which can increase the total wear in spite of favorite wear behavior of TiN. Disc shaped samples from AISI H13 (DIN 1.2344) steel were prepared in this study. Single TiN coating was deposited on some of them while others have experienced a TiN deposition by active screen plasma nitriding (ASPN). Hardness at the surface and depth of samples was measured through Vickers micro hardness test which revealed 1810 Hv hardness as the maximum values for a dual-layered ASPN-TiN. Pin-on-disc wear test was done in order to study the wear mechanism. In this regard, the wear behavior of samples was investigated against pins from 100Cr6 (Din 1.3505) bearing steel and tungsten carbide-cobalt (WC-Co) steel. It was evidenced that the dual-layer ASPN-TiN coating has shown the least weight loss with the best wearing behavior because of its high hardness values, stable interface and acceptable resistance against peeling during wearing period.

  5. On the scaling of rf and dc self-bias voltages with pressure in electronegative capacitively coupled plasmas

    SciTech Connect

    Agarwal, Ankur; Dorf, Leonid; Rauf, Shahid; Collins, Ken

    2012-03-15

    Higher gas densities and lower diffusion losses at higher operating pressures typically lead to increased charged species densities (and hence flux) for a constant power deposition in capacitively coupled plasmas (CCP). As a result, one would expect that the bias radio-frequency (rf) voltage required to deposit a given power in a CCP reactor decreases with increasing operating pressure. These observations may not hold true in multiple frequency CCPs, commonly used for dielectric etching in microelectronics fabrication, due to nonlinear interactions between the rf sources. Wafer-based measurements of the rf and self-generated direct current (dc) bias voltages in a dual-frequency capacitively coupled electronegative plasma were made, which indicate that the rf and dc voltages vary nonmonotonically with pressure. These experimental results are presented in this paper and a computational plasma model is used to explain the experimental observations for varying 60 MHz and 13 MHz powers in the Ar/CF{sub 4}/CHF{sub 3} plasma over a pressure range of 25 to 400 mTorr. The authors found that while the ion density increases with pressure, the increase is most dominant near the electrode with the high frequency source (60 MHz). The rf and dc bias voltages are ultimately influenced by both charged species density magnitudes and spatial profiles.

  6. Non-uniform plasma distribution in dc magnetron sputtering: origin, shape and structuring of spokes

    NASA Astrophysics Data System (ADS)

    Panjan, Matjaž; Loquai, Simon; Ewa Klemberg-Sapieha, Jolanta; Martinu, Ludvik

    2015-12-01

    Non-homogeneous plasma distribution in the form of organized patterns called spokes was first observed in high power impulse magnetron sputtering (HiPIMS). In the present work we investigate the spoke phenomenon in non-pulsed low-current dc magnetron sputtering (DCMS). Using a high-speed camera the spokes were systematically studied with respect to discharge current, pressure, target material and magnetic field strength. Increase in the discharge current and/or gas pressure resulted in the sequential formation of two, then three and more spokes. The observed patterns were reproducible for the same discharge conditions. Spokes at low currents and pressures formed an elongated arrowhead-like shape and were commonly arranged in symmetrical patterns. Similar spoke patterns were observed for different target materials. When using a magnetron with a weaker magnetic field, spokes had an indistinct and diffuse shape, whereas in stronger magnetic fields spokes exhibited an arrowhead-like shape. The properties of spokes are discussed in relation to the azimuthally dependent electron-argon interactions. It is suggested that a single spoke is formed due to local gas breakdown and subsequent electron drift in the azimuthal direction. The spoke is self-sustained by electrons drifting in complex electric and magnetic fields that cause and govern azimuthally dependent processes: ionization, sputtering, and secondary electron emission. In this view plasma evolves from a single spoke into different patterns when discharge conditions are changed either by the discharge current, pressure or magnetic field strength. The azimuthal length of the spoke is associated with the electron-Ar collision frequency which increases with pressure and results in shortening of spoke until an additional spoke forms at a particular threshold pressure. It is proposed that the formation of additional spokes at higher pressures and discharge currents is, in part, related to the increased transport of

  7. CH2Cl2 thin film formation on low-pressure DC plasma discharge

    NASA Astrophysics Data System (ADS)

    Martinez, H.; Flores, O.; Campillo, B.; Gomez, A.; Salazar-Flores, L.; Poveda, J. C.

    2012-08-01

    Low-pressure DC plasma discharges sustained in a glow discharge of CH2Cl2 are studied. The plasma conditions were: 1.0 Torr, 20 W and 12 l/min. The electron temperature and ion density were estimated to be 5.47±0.27 eV and (1.57±0.06)×1016 m-3, using a double Langmuir probe. The diagnostic of the species was made by optical emission spectroscopy using a spectrometer. The main species identified were at 339.61, 358.60 and 377.96 nm for C2(c'1Πg-b1Πu); at 392.50 nm for C3('Πu-' ? ); at 431.42 nm for CH(A2Δ-X2Π); at 778.28 nm for Cl; at 657.80 nm for C+; at 471.90 and 487.30 nm for H2; at 380.61 nm for CH+(A'Π-X'Σ) and at 317.73 nm for HCl+(A2Σ-X2Π). Special attention was given to the behavior of material deposited on the electrode and the time discharge dependence was also investigated. The material deposited was analyzed with the aid of a scanning electron microscope (SEM) and Fourier transform infrared spectroscopy. The SEM observation shows an increment in the particle size which is in agreement with the observation of less bands in the infrared spectra.

  8. Use of dc Ar microdischarge with nonlocal plasma for identification of metal samples

    SciTech Connect

    Kudryavtsev, A. A.; Stefanova, M. S.; Pramatarov, P. M.

    2015-04-07

    The possibility of using the collisional electron spectroscopy (CES) method for the detection of atoms from metal samples is experimentally verified. The detection and identification of metal atoms from a Pt sample in the nonlocal plasma of short (without positive column) dc Ar microdischarge at intermediate pressures (5–30 Torr) is realized in this work. Cathode sputtering is used for atomization of the metal under analysis. The identification of the analyzed metal is made from the energy spectra of groups of fast nonlocal electrons—characteristic electrons released in the Penning ionization of the Pt atoms by Ar metastable atoms and molecules. The acquisition of the electron energy spectra is performed using an additional electrode—a sensor located at the boundary of the discharge volume. The Pt characteristic Penning electrons form the maxima in the electron energy spectra at the energies of their appearance, which are 2.6 eV and 1.4 eV. From the measured energy of the maxima, identification of the metal atoms is accomplished. The characteristic Ar maxima due to pair collisions between Ar metastable atoms and molecules and super-elastic collisions are also recorded. This study demonstrates the possibility of creating a novel microplasma analyzer for atoms from metal samples.

  9. DC non-thermal atmospheric-pressure plasma jet generated using a syringe needle electrode

    NASA Astrophysics Data System (ADS)

    Matra, Khanit

    2016-07-01

    Non-thermal plasma jet was generated by applying a dc source voltage between the syringe needle anode with flowing Argon gas and a planar or a hollow copper cathode in an atmospheric-pressure environment. The two operating discharge modes, which were self-pulsing and a continuous discharge mode, these were mainly controlled by the limitations of the current flowing in the discharge circuit. A ballast resistor was an important factor in affecting the limitations of the operating discharge mode. The gas breakdown was initially generated in the self-pulsing discharge mode at the source voltage of 1.2 kV. This was slightly higher than the breakdown voltage at the experimental condition of 1 lpm of Argon and a 1 mm electrode gap distance. The peak self-pulsing discharge currents were up to 15–20 A with a self-pulsing frequency in the range of 10–20 kHz. The continuous discharge mode could be observed at the higher source voltage with the continuous discharge current within the range of a few milliamperes.

  10. Self-sustained criterion with photoionization for positive dc corona plasmas between coaxial cylinders

    SciTech Connect

    Zheng, Yuesheng; Zhang, Bo He, Jinliang

    2015-06-15

    The positive dc corona plasmas between coaxial cylinders in air under the application of a self-sustained criterion with photoionization are investigated in this paper. A photon absorption function suitable for cylindrical electrode, which can characterize the total photons within the ionization region, is proposed on the basis of the classic corona onset criteria. Based on the general fluid model with the self-sustained criterion, the role of photoionization in the ionization region is clarified. It is found that the surface electric field keeps constant under a relatively low corona current, while it is slightly weakened with the increase of the corona current. Similar tendencies can be found under different conductor radii and relative air densities. The small change of the surface electric field will become more significant for the electron density distribution as well as the ionization activity under a high corona current, compared with the results under the assumption of a constant surface field. The assumption that the surface electric field remains constant should be corrected with the increase of the corona current when the energetic electrons with a distance from the conductor surface are concerned.

  11. Synthesis of SiO(x) powder using DC arc plasma.

    PubMed

    Jung, Chan-Ok; Park, Dong-Wha

    2013-02-01

    SiO(x) was prepared by DC arc plasma and applied to the anode material of lithium ion batteries. A pellet of a mixture of Si and SiO2 was used as the raw material. The ratios of the silicon and silicon dioxide (SiO2) mixtures were varied by controlling the Si-SiO2 molar ratio (Si-SiO2 = 1-4). Hydrogen gas was used as the reduction atmosphere in the chamber. The prepared SiO(x) was collected on the chamber wall. The obtained SiO(x) was characterized by X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). XRD and TEM showed that the phase composition of the prepared particles was composed of amorphous SiO(x) and crystalline Si. The prepared SiO(x) showed wire and spherical morphology. XPS indicated the bonding state and 'x' value of the prepared SiO(x), which was close to one. The result of prepared SiO(x) is discussed from thermodynamic equilibrium calculations. The electrochemical behavior of the silicon monoxide anode was investigated. PMID:23646592

  12. Linear and Nonlinear Dust Acoustic Waves, Shocks and Stationary Structures in a dc-Glow-Discharge Dusty Plasma

    NASA Astrophysics Data System (ADS)

    Merlino, Robert

    2011-10-01

    In 1990, Rao, Shukla, and Yu (Planet. Space Sci. 38, 543) predicted the existence of the dust acoustic (DA) wave, a low-frequency (~ few Hz), compressional dust density wave that propagates through a dusty plasma at a phase speed ~ several cm/s. The DA wave was first observed by Chu et. al., (J. Phys. D: Appl. Phys. 27, 296, 1994) in an rf-produced dusty plasma, and by Barkan et. al., (Barkan et. al. Phys. Plasmas 2, 2161, 1995) who obtained video images of the DA wave trains using light scattering from a dust suspension confined in an anodic glow discharge plasma formed within a Q machine plasma. The dispersion relation for DAWs was measured by Thompson et. al., (Phys. Plasmas 4, 2331, 1997) in a dc glow discharge dusty plasma by modulating the discharge current at a set frequency. DAWs have been investigated by many groups both in weakly-coupled and strongly-coupled dusty plasmas (E. Thomas, Jr., Contrib. Plasma Phys. 49, 316, 2009). In most experiments where DA waves are present, the wave amplitude is relatively high, indicating that they are nonlinear. In this talk, results of our recent experiments on DAWs will be presented. The following experiments, performed in a dc glow-discharge dusty plasma will be described: (1) Observations of spontaneously excited nonlinear, cylindrical DAWs, which exhibit confluence of waves propagating at different speeds. (2) Investigations of self-steepening DAWs that develop into DA shocks with thicknesses comparable to the interparticle separation (Heinrich et. al., Phys. Rev. Lett. 103, 115001, 2009). (3) Measurements of the linear growth rates of DAWs excited in merging dust clouds. (4) The formation of stationary, stable dust density structures appearing as non-propagating DAWs (Heinrich et. al., Phys. Rev. E, in press, 2011). This work was performed in collaboration with S. H. Kim, J. R. Heinrich, and J. K. Meyer. Work supported by DOE Grant No. DE-FG01-04ER54795

  13. Nitrogen Plasma Instabilities and the Growth of Silicon Nitride by Electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Pool, F. S.

    1996-01-01

    Nitrogen plasma instabilities have been identified through fluctuations in the ion current density and substrate floating potential. The plasma characteristics for both nitrogen and silane-nitrogen plasmas are consistent with a transition from an underdense to overdense plasma at 0.9 and 1.0 mTorr respectively.

  14. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    SciTech Connect

    Knoops, Harm C. M. E-mail: w.m.m.kessels@tue.nl; Peuter, K. de; Kessels, W. M. M. E-mail: w.m.m.kessels@tue.nl

    2015-07-06

    The requirements on the material properties and growth control of silicon nitride (SiN{sub x}) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiN{sub x} by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiN{sub x} by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiN{sub x} ALD using SiH{sub 2}(NH{sup t}Bu){sub 2} as precursor and N{sub 2} plasma as reactant, the gas residence time τ was found to determine both SiN{sub x} film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

  15. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zuo, Zheng; Liu, Jianlin

    2015-11-23

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.

  16. Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation

    NASA Astrophysics Data System (ADS)

    Mishina, Ken; Ogishi, Atsufumi; Ueno, Kiyoshi; Jonai, Sachiko; Ikeno, Norihiro; Saruwatari, Tetsuya; Hara, Kohjiro; Ogura, Atsushi; Yamazaki, Toshiharu; Doi, Takuya; Shinohara, Makoto; Masuda, Atsushi

    2015-08-01

    The antireflection coating (ARC) on crystalline silicon solar cells plays an important role in preventing potential-induced degradation (PID). In a previous work, we reported that the module, which has an ARC prepared by plasma-enhanced chemical-vapor deposition (PE-CVD) using a hollow cathode, indicated high resistance to PID with a constant conventional refractive index (RI). In this work, we report further investigation of the high-PID-resistant ARC. The results indicate that the high-PID resistant ARC had high conductivity, high Si-H bond density, and low N-H bond density. Furthermore, both higher PID resistance and higher conversion efficiency are achieved using an ARC of double or triple layers comprising stacked silicon nitride layers of different RI than those of a conventional single-layer ARC.

  17. Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

    SciTech Connect

    Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe; Blasco, Nicolas

    2013-03-18

    Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

  18. A study of structural and mechanical properties of nano-crystalline tungsten nitride film synthesis by plasma focus

    NASA Astrophysics Data System (ADS)

    Hussnain, Ali; Singh Rawat, Rajdeep; Ahmad, Riaz; Hussain, Tousif; Umar, Z. A.; Ikhlaq, Uzma; Chen, Zhong; Shen, Lu

    2015-02-01

    Nano-crystalline tungsten nitride thin films are synthesized on AISI-304 steel at room temperature using Mather-type plasma focus system. The surface properties of the exposed substrate against different deposition shots are examined for crystal structure, surface morphology and mechanical properties using X-ray diffraction (XRD), atomic force microscope, field emission scanning electron microscope and nano-indenter. The XRD results show the growth of WN and WN2 phases and the development of strain/stress in the deposited films by varying the number of deposition shots. Morphology of deposited films shows the significant change in the surface structure with different ion energy doses (number of deposition shots). Due to the effect of different ion energy doses, the strain/stress developed in the deposited film leads to an improvement of hardness of deposited films.

  19. Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process

    NASA Astrophysics Data System (ADS)

    Chiang, Chen-Kuo; Wu, Chien-Hung; Liu, Chin-Chien; Lin, Jin-Fu; Yang, Chien-Lun; Wu, Jiun-Yuan; Wang, Shui-Jinn

    2012-10-01

    The NH3 thermal annealing and decoupled plasma nitridation (DPN) processes are compared for the equivalent oxide thickness (EOT) scaling of atomic-layer-deposited hafnium zirconate (HfZrO2) gate dielectric. Detailed physical, optical, and electrical characteristics of nitrided HfZrO2 (HfZrON) film are reported. It is found that DPN can yield a thinner SiOx interfacial layer (IL) (about 0.12 nm more in terms of EOT scaling) and a more densified HfZrO2 layer compared to those obtained using NH3 thermal annealing at a 16% nitrogen dose. NH3 thermal nitridation causes a large nitrogen distribution tail at the SiOx IL/Si substrate interface and increases leakage current, which suppresses EOT scalability.

  20. Effects of Ti-C:H coating and plasma nitriding treatment on tribological, electrochemical, and biocompatibility properties of AISI 316L.

    PubMed

    Kao, W H; Su, Y L; Horng, J H; Zhang, K X

    2016-08-01

    Ti-C:H coatings were deposited on original, nitrided, and polished-nitrided AISI 316L stainless steel substrates using a closed field unbalanced magnetron sputtering system. Sliding friction wear tests were performed in 0.89 wt.% NaCl solution under a load of 30 N against AISI 316L stainless steel, Si3N4, and Ti6Al4V balls, respectively. The electrochemical properties of the various specimens were investigated by means of corrosion tests performed in 0.89 wt.% NaCl solution at room temperature. Finally, the biocompatibility properties of the specimens were investigated by performing cell culturing experiments using purified mouse leukemic monocyte macrophage cells (Raw264.7). In general, the results showed that plasma nitriding followed by Ti-C:H coating deposition provides an effective means of improving the wear resistance, anti-corrosion properties, and biocompatibility performance of AISI 316L stainless steel. PMID:27422714

  1. Geopolymers prepared from DC plasma treated air pollution control (APC) residues glass: properties and characterisation of the binder phase.

    PubMed

    Kourti, Ioanna; Devaraj, Amutha Rani; Bustos, Ana Guerrero; Deegan, David; Boccaccini, Aldo R; Cheeseman, Christopher R

    2011-11-30

    Air pollution control (APC) residues have been blended with glass-forming additives and treated using DC plasma technology to produce a high calcium aluminosilicate glass (APC glass). This has been used to form geopolymer-glass composites that exhibit high strength and density, low porosity, low water absorption, low leaching and high acid resistance. The composites have a microstructure consisting of un-reacted residual APC glass particles imbedded in a complex geopolymer and C-S-H gel binder phase, and behave as particle reinforced composites. The work demonstrates that materials prepared from DC plasma treated APC residues have potential to be used to form high quality pre-cast products. PMID:21963174

  2. Characteristics of sheath-driven tangential flow produced by a low-current DC surface glow discharge plasma actuator

    NASA Astrophysics Data System (ADS)

    Shin, Jichul; Shajid Rahman, Mohammad

    2014-08-01

    An experimental investigation of low-speed flow actuation at near-atmospheric pressure is presented. The flow actuation is achieved via low-current ( \\lesssim 1.0 mA) continuous or pulsed DC surface glow discharge plasma. The plasma actuator, consisting of two sharp-edged nickel electrodes, produces a tangential flow in a direction from anode to cathode, and is visualized using high-speed schlieren photography. The induced flow velocity estimated via the schlieren images reaches up to 5 m/s in test cases. The actuation capability increases with pressure and electrode gap distances, and the induced flow velocity increases logarithmically with the discharge power. Pulsed DC exhibits slightly improved actuation capability with better directionality. An analytic estimation of induced flow velocity obtained based on ion momentum in the cathode sheath and gas dynamics in one-dimensional flow yields values similar to those measured.

  3. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    NASA Astrophysics Data System (ADS)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  4. Development of a DC Glow Discharge Exhibit for the Demonstration of Plasma Behavior in a Magnetic Field

    NASA Astrophysics Data System (ADS)

    Bruder, Daniel

    2010-11-01

    The DC Glow Discharge Exhibit is intended to demonstrate the effects a magnetic field produces on a plasma in a vacuum chamber. The display, which will be featured as a part of The Liberty Science Center's ``Energy Quest Exhibition,'' consists of a DC glow discharge tube and information panels to educate the general public on plasma and its relation to fusion energy. Wall posters and an information booklet will offer brief descriptions of fusion-based science and technology, and will portray plasma's role in the development of fusion as a viable source of energy. The display features a horse-shoe magnet on a movable track, allowing viewers to witness the effects of a magnetic field upon a plasma. The plasma is created from air within a vacuum averaging between 100-200 mTorr. Signage within the casing describes the hardware components. The display is pending delivery to The Liberty Science Center, and will replace a similar, older exhibit presently at the museum.

  5. Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

    SciTech Connect

    Khan, Majid; Islam, Mohammad

    2013-12-15

    Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thin films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ∼550 nm and electrical resistivity value of 0.57 × 10{sup −4} Ω cm.

  6. Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas

    NASA Astrophysics Data System (ADS)

    Sahu, B. B.; Shin, Kyung S.; Han, Jeon G.

    2016-02-01

    This study investigates low-temperature plasma nitriding of hydrogenated silicon (SiN x :H) film in radio frequency (RF) and RF-ultra-high frequency (UHF) hybrid plasmas. To study the optimized conditions for the deposition of SiN x :H film, this work adopts a systematic plasma diagnostic approach in the nitrogen-silane and nitrogen-silane-ammonia plasmas. This work also evaluates the capability of plasma and radical formation by utilizing different plasma sources in the PECVD process. For the plasma diagnostics, we have purposefully used the combination of optical emission spectroscopy (OES), intensified CCD (ICCD) camera, vacuum ultraviolet absorption spectroscopy (VUVAS), and RF compensated Langmuir probe (LP). Data reveal that there is significant enhancement in the atomic nitrogen radicals, plasma densities, and film properties using the hybrid plasmas. Measurements show that addition of a small amount of NH3 can significantly reduce the electron temperature, plasma, and radical density. Also, optical and chemical properties of the deposited films are investigated on the basis of plasma diagnostics. Good quality SiN x :H films, with atomic nitrogen to hydrogen ratio of 4:1, are fabricated. The plasma chemistry of the hybrid plasmas is also discussed for its utility for plasma applications.

  7. Advances and directions of ion nitriding/carburizing

    NASA Technical Reports Server (NTRS)

    Spalvins, Talivaldis

    1989-01-01

    Ion nitriding and carburizing are plasma activated thermodynamic processes for the production of case hardened surface layers not only for ferrous materials, but also for an increasing number of nonferrous metals. When the treatment variables are properly controlled, the use of nitrogenous or carbonaceous glow discharge medium offers great flexibility in tailoring surface/near-surface properties independently of the bulk properties. The ion nitriding process has reached a high level of maturity and has gained wide industrial acceptance, while the more recently introduced ion carburizing process is rapidly gaining industrial acceptance. The current status of plasma mass transfer mechanisms into the surface regarding the formation of compound and diffusion layers in ion nitriding and carbon build-up ion carburizing is reviewed. In addition, the recent developments in design and construction of advanced equipment for obtaining optimized and controlled case/core properties is summarized. Also, new developments and trends such as duplex plasma treatments and alternatives to dc diode nitriding are highlighted.

  8. Production of water mist from electrolyte surface in contact with atmospheric-pressure dc helium glow plasma

    NASA Astrophysics Data System (ADS)

    Sasaki, K.; Ishigame, H.; Nishiyama, S.

    2015-09-01

    Plasma-liquid interaction is a new subject which has been opened by developments of atmospheric-pressure plasma sources. In this work, we adopted laser Mie scattering to examine an atmospheric-pressure dc helium glow plasma in contact with NaCl solution. The plasma was produced by applying a dc voltage between a stainless-steel gas nozzle and the electrolyte via a register of 100 k Ω. The gap distance between the electrolyte surface and the electrode was 4 mm. Helium as a working gas was fed from the nozzle toward the electrolyte surface. The discharge space was illuminated using a cw laser beam at a wavelength of 457 nm, and the scattered laser light was captured using a high-speed camera with an image intensifier via an interference filter at the laser wavelength. The scattered laser light told us the existence of particulates or water mists in the discharge space. The water mists were produced from the electrolyte surface explosively as well as randomly. The trajectories of the mists were basically parabolic. We sometimes observed the expansion of the mist size in the gas phase. The expansion was followed by the disappearance of the mist. This may be due to the evaporation of the mist, and is considered to be the production mechanism of Na in the gas phase.

  9. Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering

    SciTech Connect

    Ni, Chih-Jui; Chau-Nan Hong, Franklin

    2014-05-15

    Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N{sub 2} were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500 °C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300 °C. The N:Ga ratio of the film grown at 500 °C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.

  10. A review of the gas species activity and control of pulsed plasma technology during the nitriding, carburizing and carbonitriding processes

    SciTech Connect

    Pye, D.

    1995-12-31

    The control of gas activity and process technology has developed tremendously over the past two decades. While once considered to be primitive control systems using simple PID loops with thermocouples that were suspect and unable to perform repeatedly and consistently during the arduous process of plasma nitriding and processing, developments in recent years have elevated the control of the process into what might be considered one of the most controllable processes of the latter part of this century. The advent of plasma processing technology has improved control methods by observing and harnessing each of the various process parameters into many different combinations of control systems. Some of these control systems can control the complete function of the process, thus freeing the operator entirely for other duties, except that of load and unload, to the point where the operator is intimately involved with the process. Some of the control methods report from the process to a PLC through to a PC, and current developments rely entirely on computers and developed software shown on various screens. This presentation will review some of the more common process control methods, including that of highly developed PC systems.

  11. Modeling of a supersonic DC plasma torch system for carbon nanotube production

    NASA Astrophysics Data System (ADS)

    Guo, Liping

    The carbon nanotube (CNT) structure forms a very promising source material. It has unique properties such as high thermal and electrical conductivities, and a very high mechanical strength. In recent years, researchers were able to improve both the quantity and quality of the CNT production. Among the efforts made to scale up the production, Harbec and Meunier designed a new plasma torch process for the industrial production of CNT in bulk powder form. Their process is based on the DC plasma-jet pyrolysis of a carbon-containing gas. Experiments were conducted using either 100 slpm of argon or 225 slpm of helium. Tetrachloroethylene (C2Cl4, or TCE) was selected as the carbon raw material. The present work focuses on the modeling of this CNT synthesis process and aims at an understanding of the physical and chemical phenomena observed in this system. First, a description is made of the temperature and flow fields, as well as the species concentration distribution in the torch nozzle using both possibilities of He or Ar as the plasma gas. This is followed in the second part of the thesis by a model aimed to study the nucleation and evolution of the metal particles acting as catalyst for CNT growth in the nozzle. In the third part, the modeling of the TCE pyrolysis process in the flow was carried out. The fluid dynamics equations are used in this system showing supersonic characteristics. A realizable k-ε model is used to address the turbulent effects in the flow fields. The moment method is employed to calculate the formation of the fine catalyst particles from the metal vapor injected. Within the supersonic domain of the flow field, the influence of existing shock waves on the particle nucleation is discussed, as well as the chemical reactions involved. Results show that the supersonic phenomena make it possible for metal particles to nucleate and be maintained in small sizes. This however also causes a backflow in the nozzle, which partially contributes to the

  12. The effects of axial magnetic fields on the operating characteristics and downstream plasma parameters of DC plasma torches

    SciTech Connect

    Takakura, Y.; Ono, S.; Teii, S.

    1995-12-31

    Plasma torch is used in many industrial processes for high temperature sources. In the past, an application of magnetic field is experientially known to stabilize plasma torch operations. However, there is a little discussion regarding to magnetic field effects on plasma torch operating characteristics and plasma parameters. In this work, the influences of magnetic field and plasma gas flow rate on plasma torch current-voltage characteristics and downstream plasma parameters have been experimentally studied, and results are qualitatively analyzed based on the charged particle transport equation.

  13. Design and Development of High Voltage Direct Current (DC) Sources for the Solar Array Module Plasma Interaction Experiment

    NASA Technical Reports Server (NTRS)

    Bibyk, Irene K.; Wald, Lawrence W.

    1995-01-01

    Two programmable, high voltage DC power supplies were developed as part of the flight electronics for the Solar Array Module Plasma Interaction Experiment (SAMPIE). SAMPIE's primary objectives were to study and characterize the high voltage arcing and parasitic current losses of various solar cells and metal samples within the space plasma of low earth orbit (LEO). High voltage arcing can cause large discontinuous changes in spacecraft potential which lead to damage of the power system materials and significant Electromagnetic Interference (EMI). Parasitic currents cause a change in floating potential which lead to reduced power efficiency. These primary SAMPIE objectives were accomplished by applying artificial biases across test samples over a voltage range from -600 VDC to +300 VDC. This paper chronicles the design, final development, and test of the two programmable high voltage sources for SAMPIE. The technical challenges to the design for these power supplies included vacuum, space plasma effects, thermal protection, Shuttle vibrations and accelerations.

  14. DC Langmuir Probe for Measurement of Space Plasma: A Brief Review

    NASA Astrophysics Data System (ADS)

    Oyama, Koichiro

    2015-09-01

    Herein, we discuss the in situ measurement of the electron temperature in the ionosphere/plasmasphere by means of DC Langmuir probes. Major instruments which have been reported are a conventional DC Langmuir probe, whose probe voltage is swept; a pulsed probe, which uses pulsed bias voltage; a rectification probe, which uses sinusoidal signal; and a resonance cone probe, which uses radio wave propagation. The content reviews past observations made with the instruments above. We also discuss technical factors that should be taken into account for reliable measurement, such as problems related to the contamination of electrodes and the satellite surface. Finally, we discuss research topics to be studied in the near future.

  15. Ion Energy Distribution Control Using Ion Mass Ratios in Inductively Coupled Plasmas With a Pulsed DC Bias on the Substrate

    NASA Astrophysics Data System (ADS)

    Logue, Michael D.; Kushner, Mark J.

    2012-10-01

    In many applications requiring energetic ion bombardment, such as plasma etching, gas mixtures containing several ion species are used. In cases where two ions have significantly different masses, it may be feasible to selectively control the ion energy distributions (IEDs) by preferentially extracting the lighter ion mass with a controllable energy. In this work, we investigate the possibility of using a pulsed DC substrate bias in an inductively coupled plasma (ICP) to obtain this control. Pulsing of the substrate bias in the afterglow of a pulsed ICP plasma should allow for shifting of the IED peak energy by an amount approximately equal to the applied bias. If short enough pulses are used it may be possible to obtain a higher flux at high energy of the lower mass ion compared to the higher mass ion. A computational investigation of IEDs in low pressure (a few to 100 mTorr) ICPs sustained in gas mixtures such as Ar/H2 or Xe/H2 (having large mass differences) was conducted as a proof of principle. The model is the Hybrid Plasma Equipment Model with which electron energy distributions (EEDs) and IEDs as a function of position and time are obtained using Monte Carlo simulations. We have found a selective ability to mass and energy discriminate ion fluxes when using sufficiently short bias pulses. Results from the model for plasmas densities, electron temperatures, EEDs and IEDs will be discussed.

  16. An energy-efficient process for decomposing perfluorooctanoic and perfluorooctane sulfonic acids using dc plasmas generated within gas bubbles

    NASA Astrophysics Data System (ADS)

    Yasuoka, K.; Sasaki, K.; Hayashi, R.

    2011-06-01

    Perfluorooctanoic acid (PFOA) and perfluorooctane sulfonic acid (PFOS) are environmentally harmful and persistent substances. Their decomposition was investigated using dc plasmas generated within small gas bubbles in a solution. The plasma characteristics including discharge voltage, voltage drop in the liquid, plasma shape and the emission spectrum were examined with different gases. The decomposition rate and energy efficiency were evaluated by measuring the concentration of fluoride and sulfate ions released from PFOA/PFOS molecules. The concentration of fluoride ions and energy efficiency in the treatment of a PFOS solution were 17.7 mg l-1 (54.8% of the initial amount of fluorine atoms) and 26 mg kWh-1, respectively, after 240 min of operation. The addition of scavengers of hydroxyl radicals and hydrated electrons showed little effect on the decomposition. The decomposition processes were analyzed with an assumption that positive species reacted with PFOA/PFOS molecules at the boundary of the plasma-solution surface. This type of plasma showed a much higher decomposition energy efficiency compared with energy efficiencies reported in other studies.

  17. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

    PubMed

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  18. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Zheng, Jian-Guo; Liu, Jianlin

    2016-07-01

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5-6 nm)/G (26-27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ˜2.5-3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  19. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

    PubMed Central

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  20. Boron nitride phosphide thin films grown on quartz substrate by hot-filament and plasma-assisted chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhang, X. W.; Xu, S. Y.; Han, G. R.

    2004-10-01

    Boron nitride phosphide films are, for the first time, grown on transparent quartz substrate by hot filament and radio-frequency plasma co-assisted chemical vapor deposition technique. XPS, XRD, SEM, and UV measurements are performed to study the chemical composition, crystallization, microstructure, and optical absorption, respectively. A centipede-like microstructure and undulating ground morphology on the film surface are observed, and their growth mechanism is speculated upon. The chemical composition is determined as BN1-xPx, whose characteristic XRD peak is preliminarily identified. The optical band gap can be modulated between 5.52 eV and 3.74 eV, simply by adjusting the phosphorus content in BN1-xPx through modifying the PH3 flux during the film-deposition process. The merits of the BN1-xPx film, such as high ultraviolet photoelectric sensitivity with negligible sensitivity in the visible region, modifiable wide optical band gap, and good adhesion on transparent substrate, suggest potential applications for ultraviolet photo-electronics.

  1. Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

    SciTech Connect

    Samal, Nigamananda; Du Hui; Luberoff, Russell; Chetry, Krishna; Bubber, Randhir; Hayes, Alan; Devasahayam, Adrian

    2013-01-15

    Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for the DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

  2. Determination of dissolved boron in fresh, estuarine, and geothermal waters by d.c. argon-plasma emission spectrometry

    USGS Publications Warehouse

    Ball, J.W.; Thompson, J.M.; Jenne, E.A.

    1978-01-01

    A d.c. argon-plasma emission spectrometer is used to determine dissolved boron in natural (fresh and estuarine) water samples. Concentrations ranged from 0.02 to 250 mg l-1. The emission-concentration function is linear from 0.02 to 1000 mg l-1. Achievement of a relative standard deviation of ??? 3% requires frequent restandardization to offset sensitivity changes. Dilution may be necessary to overcome high and variable electron density caused by differences in alkali-metal content and to avoid quenching of the plasma by high solute concentrations of sodium and other easily ionized elements. The proposed method was tested against a reference method and found to be more sensitive, equally or more precise and accurate, less subject to interferences, with a wider linear analytical range than the carmine method. Analyses of standard reference samples yielded results in all cases within one standard deviation of the means. ?? 1978.

  3. Current-voltage characteristics of hydrogen DC plasma torches with different sizes in an external axial magnetic field

    NASA Astrophysics Data System (ADS)

    Ma, Jie; Wen, Guang-Dong; Su, Bao-Gen; Yang, Yi-Wen; Ren, Qi-Long

    2015-06-01

    Current-voltage (I-V) characteristics of hydrogen DC plasma torches with different sizes in an external axial magnetic field under atmospheric pressure are reported. Three anodes with different diameters are adopted in a 50-kW torch: 25 mm, 30 mm, and 35 mm, respectively. Two different diameters of anodes, that is, 100 mm and 130 mm, are adopted in a 1-MW plasma torch. The arc voltage shows a negative trend with the increase of arc current under the operating regimes. On the contrary, arc voltage shows a positive trend as the flow rate of carrier gas increases, and a similar trend is found with increasing the external magnetic flux density. A similarity formula is constructed to correlate the experimental data of the torches mentioned above. Linear fitting shows that the Pearson correlation coefficient is 0.9958. Project supported by the Special Fund for Basic Scientific Research of Central Colleges, China (Grant No. 2012FZA4023).

  4. Hysteresis in amplitudes of self-excited oscillations for co-axial electrode-geometry DC glow discharge plasma

    SciTech Connect

    Kumar, R.; Narayanan, R.; Prasad, Awadhesh

    2014-12-15

    Hysteresis in amplitudes of the self-excited oscillations of the floating potential and discharge current is observed in an unmagnetized co-axial electrode-geometry DC glow discharge plasma system. The nonlinearities of these oscillations are studied using standard dynamical analysis tools. The characterization revealed the transition of low-amplitude high-frequency period-n oscillations to a large amplitude low frequency period-1 oscillations through a chaotic intermediate route. The transition of the low amplitude, high frequency period-n oscillations to chaotic type is observed to be linked to the dynamical change in the plasma system, i.e., after a negative differential resistance (NDR) region, whereas the transition from chaotic to period-1 is observed to be linked to a discharge current threshold.

  5. Exploring High Refractive Index Silicon-Rich Nitride Films by Low-Temperature Inductively Coupled Plasma Chemical Vapor Deposition and Applications for Integrated Waveguides.

    PubMed

    Ng, Doris K T; Wang, Qian; Wang, Ting; Ng, Siu-Kit; Toh, Yeow-Teck; Lim, Kim-Peng; Yang, Yi; Tan, Dawn T H

    2015-10-01

    Silicon-rich nitride films are developed and explored using an inductively coupled plasma chemical vapor deposition system at low temperature of 250 °C with an ammonia-free gas chemistry. The refractive index of the developed silicon-rich nitride films can increase from 2.2 to 3.08 at 1550 nm wavelength while retaining a near-zero extinction coefficient when the amount of silane increases. Energy dispersive spectrum analysis gives the silicon to nitrogen ratio in the films. Atomic force microscopy shows a very smooth surface, with a surface roughness root-mean-square of 0.27 nm over a 3 μm × 3 μm area of the 300 nm thick film with a refractive index of 3.08. As an application example, the 300 nm thick silicon-rich nitride film is then patterned by electron beam lithography and etched using inductively coupled plasma system to form thin-film micro/nano waveguides, and the waveguide loss is characterized. PMID:26375453

  6. Microstructural Characteristics of Plasma Nitrided Layer on Hot-Rolled 304 Stainless Steel with a Small Amount of α-Ferrite

    NASA Astrophysics Data System (ADS)

    Xu, Xiaolei; Yu, Zhiwei; Cui, Liying; Niu, Xinjun; Cai, Tao

    2016-02-01

    The hot-rolled 304 stainless steel with γ-austenite and approximately 5 pct α-ferrite elongated along the rolling direction was plasma-nitrided at a low temperature of 693 K (420 °C). X-ray diffraction results revealed that the nitrided layer was mainly composed of the supersaturated solid solution of nitrogen in austenite ( γ N). Transmission electron microscopy (TEM) observations showed that the microstructure of the γ N phase exhibited "fracture factor contrast" reflective of the occurrence of fine pre-precipitations in γ N by the continuous precipitation. The occurrence of a diffuse scattering effect on the electron diffraction spots of γ N indicated that the pre-precipitation took place in γ N in the form of strongly bonded Cr-N clusters or pairs due to a strong attractive interaction of nitrogen with chromium. Scanning electron microscopy and TEM observations indicated that the discontinuous precipitation initiated from the γ/ α interfaces and grew from the austenite boundaries into austenite grains to form a lamellar structure consisting of CrN and ferrite. The orientation relationship between CrN and ferrite corresponded to a Baker-Nutting relationship: (100)CrN//(100) α ; [011]CrN//[001] α . A zigzag boundary line following the banded structure of alternating γ-austenite and elongated α-ferrite was presented between the nitrided layer and the substrate to form a continuous varying layer thickness, which resulted from the difference in diffusivities of nitrogen in α-ferrite and γ-austenite, along the γ/ α interfaces and through the lattice. Microstructural features similar to the γ N were also revealed in the ferrite of the nitrided layer by TEM. It was not excluded that a supersaturated solid solution of nitrogen in ferrite ( α N) formed in the nitrided layer.

  7. Etching Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma

    NASA Astrophysics Data System (ADS)

    Miyawaki, Yudai; Shibata, Emi; Kondo, Yusuke; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Okamoto, Hidekazu; Sekine, Makoto; Hori, Masaru

    2013-02-01

    The etching rates of low-dielectric-constant (low-k), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C5F10O plasma etching in dual-frequency (60 MHz/2 MHz)-excited parallel plate capacitively coupled plasma. Previously, perfluoropropyl vinyl ether [C5F10O] provided a very high density of CF3+ ions [Nagai et al.: Jpn. J. Appl. Phys. 45 (2006) 7100]. Surface nitridation on the p-SiOCH surface exposed to Ar/N2 plasma led to the etching of larger amounts of p-SiOCH in Ar/C5F10O plasma, which depended on the formation of bonds such as =C(sp2)=N(sp2)- and -C(sp)≡N(sp).

  8. Structural evolution of Ti destroyable interlayer in large-size diamond film deposition by DC arc plasma jet

    NASA Astrophysics Data System (ADS)

    Guo, Jianchao; Li, Chengming; Liu, Jinlong; Wei, Junjun; Chen, Liangxian; Hua, Chenyi; Yan, Xiongbo

    2016-05-01

    The addition of titanium (Ti) interlayer was verified to reduce the residual stress of diamond films by self-fracturing and facilitate the harvest of a crack-free free-standing diamond film prepared by direct current (DC) arc plasma jet. In this study, the evolution of the Ti interlayer between large-area diamond film and substrate was studied and modeled in detail. The evolution of the interlayer was found to be relevant to the distribution of the DC arc plasma, which can be divided into three areas (arc center, arc main, and arc edge). The formation rate of titanium carbide (TiC) in the arc main was faster than in the other two areas and resulted in the preferred generation of crack in the diamond film in the arc main during cooling. Sandwich structures were formed along with the growth of TiC until the complete transformation of the Ti interlayer. The interlayer released stress via self-fracture. Avoiding uneven fragile regions that formed locally in the interlayer and achieving cooperatively released stress are crucial for the preparation of large crack-free diamond films.

  9. Dc to ac field conversion due to leaky-wave excitation in a plasma slab behind an ionization front

    NASA Astrophysics Data System (ADS)

    Kostin, V. A.; Vvedenskii, N. V.

    2015-03-01

    We present a way for generating coherent tunable electromagnetic radiation through dc to ac field conversion by an ionization front. The conversion is caused by the excitation of leaky waves behind the transversely limited ionization front propagating in a uniform electrostatic field. This differs significantly from the well-known dc-to-ac-radiation-converter models which consider Doppler-like frequency conversion by a transversely unlimited ionization front propagating in a spatially periodic electric field. We explore the dispersion properties and excitation of these leaky waves radiated through the transverse plasma boundary at the Cherenkov angle to the direction of propagation of a superluminal ionization front as dependent on the parameters of the plasma produced and on the speed of the ionization front. It is shown that not only the center frequency but also the duration and waveform of the generated pulse may significantly depend on the speed of the ionization front. The results indicate the possibility of using such converters based on planar photoconductive antennas to create sources of microwave and terahertz radiation with controllable waveforms that are transformed from video to radio pulse when the angle of incident ionizing radiation is tuned.

  10. Catastrophic instabilities of modified DA-DC hybrid surface waves in a semi-bounded plasma system

    NASA Astrophysics Data System (ADS)

    Lee, Myoung-Jae; Jung, Young-Dae

    2016-06-01

    We find the catastrophic instabilities and derive the growth rates for the dust-cyclotron resonance (DCR) and dust-rotation resonance (DRR) modes of the modified dust-acoustic and dust-cyclotron (DA-DC) hybrid surface waves propagating at the plasma-vacuum interface where the plasma is semi-bounded and composed of electrons and rotating dust grains. The effects of magnetic field and dust rotation frequency on the DCR- and DDR-modes are also investigated. We find that the dust rotation frequency enhances the growth rate of DCR-mode and the effect of dust rotation on this resonance mode decreases with an increase of the wave number. We also find that an increase of magnetic field strength enhances the DCR growth rate, especially, for the short wavelength regime. In the case of DRR-mode, the growth rate is found to be decreased less sensitively with an increase of the wave number compared with the case of DCR, but much significantly enhanced by an increase of dust rotation frequency. The DRR growth rate also decreases with an increase of the magnetic field strength, especially in the long wavelength regime. Interestingly, we find that catastrophic instabilities occur for both DCR- and DRR-modes of the modified DA-DC hybrid surface waves when the rotational frequency is close to the dust-cyclotron frequency. Both modes can also be excited catastrophically due to the cooperative interaction between the DCR-mode and the DRR-mode.

  11. Hollow-anode plasma source for molecular beam epitaxy of gallium nitride

    SciTech Connect

    Anders, A.; Newman, N.; Rubin, M.; Dickinson, M.; Thomson, A.; Jones, E.; Phatak, P.; Gassmann, A.

    1995-09-01

    GaN films have been grown by molecular beam epitaxy (MBE) using a hollow-anode nitrogen plasma source. The source was developed to minimize defect formation as a result of contamination and ion damage. The hollow-anode discharge is a special form of glow discharge with very small anode area. A positive anode voltage drop of 30--40 V and an increased anode sheath thickness leads to ignition of a relatively dense plasma in front of the anode hole. Driven by the pressure gradient, the ``anode`` plasma forms a bright plasma jet streaming with supersonic velocity towards the substrate. Films of GaN have been grown on (0001) SiC and (0001) Al{sub 2}O{sub 3} at a temperature from 600--800 C. The films were investigated by photoluminescence, cathodoluminescence, X-ray diffraction, and X-ray fluorescence. The film with the highest structural quality had a rocking curve with 5 arcmin, the lowest reported value for MBE growth to date.

  12. Amorphous silicon nitride films of different composition deposited at room temperature by pulsed glow discharge plasma immersion ion implantation and deposition

    SciTech Connect

    Afanasyev-Charkin, I.V.; Jacobsohn, L.G.; Averitt, R.D.; Nastasi, M.

    2004-11-01

    Amorphous hydrogenated silicon nitride (a-SiN{sub x}:H) films of different compositions (0{<=}x{<=}1.18) were prepared by pulsed glow discharge plasma immersion ion implantation and deposition. The processing gases were silane and nitrogen at a substrate temperature {<=}50 deg. C. The properties of the films were investigated using Rutherford backscattering, elastic recoil detection analysis, UV-visible optical absorption, Fourier transform infrared, and Raman spectroscopies, and nanoindentation. Depending on the value of x, the band gap of the films changes from 1.54 to 4.42 eV, and hardness changes from 11.2 to 15.3 GPa. Changes in the film properties are caused by formation of Si-N bonds and by reducing disorder in the films. It is shown that hard and transparent silicon nitride films can be obtained at room temperature.

  13. Amorphous silicon nitride films of different composition deposited at room temperature by pulsed glow discharge plasma immersion ion implantation and deposition

    NASA Astrophysics Data System (ADS)

    Afanasyev-Charkin, I. V.; Jacobsohn, L. G.; Averitt, R. D.; Nastasi, M.

    2004-11-01

    Amorphous hydrogenated silicon nitride (a-SiNx:H) films of different compositions (0<=x<=1.18) were prepared by pulsed glow discharge plasma immersion ion implantation and deposition. The processing gases were silane and nitrogen at a substrate temperature <=50 °C. The properties of the films were investigated using Rutherford backscattering, elastic recoil detection analysis, UV-visible optical absorption, Fourier transform infrared, and Raman spectroscopies, and nanoindentation. Depending on the value of x, the band gap of the films changes from 1.54 to 4.42 eV, and hardness changes from 11.2 to 15.3 GPa. Changes in the film properties are caused by formation of Si-N bonds and by reducing disorder in the films. It is shown that hard and transparent silicon nitride films can be obtained at room temperature.

  14. Efficiency of plasma density control with dc discharge and magnetic field for different surface types in low pressure hypersonic flow

    NASA Astrophysics Data System (ADS)

    Schweigert, Irina

    2013-09-01

    Recently the problem of communication blackout during reentrant flight still remains unsolved. The spacecrafts enter the upper atmospheric layers with a hypersonic speed and the shock heated air around them becomes weakly ionized. The gas ionization behind the shock front is associative in nature and occurs through chemical reactions between fragments of molecules. The formation of a plasma layer near the surfaces of spacecraft causes serious problems related to the blocking of communication channels with the Earth and other spacecrafts. A promising way of restoring the radio communications is the application of electrical and magnetic fields for controlling the plasma layer parameters. Nevertheless the flux of electrons and ions on the surface charges it that essentially decrease the effect of electro-magnetic control of local plasma density. In Ref. it is shown that there is the way to remove the surface charge using the lateral diode string structures. Based on two dimensional kinetic Particle in cell Monte Carlo collision simulations, we study the possibility of local control the plasma layer parameters near a flat surface of two different types. The gas velocity distribution is set with a model profile. We apply DC voltage up to 4 kV and magnetic field B up to 200 G.

  15. Attempt of Deposition of Ag-Doped Amorphous Carbon Film by Ag-Cathode DC Plasma with CH4 Flow.

    PubMed

    Tsubota, Toshiki; Kuratsu, Kazuhiro; Murakami, Naoya; Ohno, Teruhisa

    2015-06-01

    A simple DC plasma apparatus having large Ag cathode with CH4 flow was used for the attempt to prepare Ag-doped amorphous carbon film. As the gaseous source, CH4 and the additive (N2 or Ar) were used for the plasma process. When N2 was the additive, the substrate surfaces after the plasma process were electrical conductor although high electrical resistance. The growth rate of the deposits decreased with increasing the amount of N2, and the deposits contained nitrogen. Although the small amount of silver was detected by XPS, the peak for Ag may not be in the carbon deposit but be in interlayer formed at Ar etching process. When Ar was the additive, the substrate surfaces after the plasma process were also electrical conductor although high electrical resistance. The growth rate of the deposits was almost independent of the amount of Ar, and the deposits contained no argon. The small XPS peaks for Ag may not be in the carbon deposit but be in interlayer formed at Ar etching process. Both the prepared samples had high antibiotic property. The method of this study could be used for the surface reforming with amorphous carbon coating having electrical conductivity and antibiotic property. PMID:26369089

  16. Effect of process parameters on properties of argon–nitrogen plasma for titanium nitride film deposition

    SciTech Connect

    Saikia, Partha; Kakati, Bharat

    2013-11-15

    In this study, the effect of working pressure and input power on the physical properties and sputtering efficiencies of argon–nitrogen (Ar/N{sub 2}) plasma in direct current magnetron discharge is investigated. The discharge in Ar/N{sub 2} is used to deposit TiN films on high speed steel substrate. The physical plasma parameters are determined by using Langmuir probe and optical emission spectroscopy. On the basis of the different reactions in the gas phase, the variation of plasma parameters and sputtering rate are explained. A prominent change of electron temperature, electron density, ion density, and degree of ionization of Ar is found as a function of working pressure and input power. The results also show that increasing working pressure exerts a negative effect on film deposition rate while increasing input power has a positive impact on the same. To confirm the observed physical properties and evaluate the texture growth as a function of deposition parameters, x-ray diffraction study of deposited TiN films is also done.

  17. Numerical and experimental study on a pulsed-dc plasma jet

    NASA Astrophysics Data System (ADS)

    Liu, X. Y.; Pei, X. K.; Lu, X. P.; Liu, D. W.

    2014-06-01

    A numerical and experimental study of plasma jet propagation in a low-temperature, atmospheric-pressure, helium jet in ambient air is presented. A self-consistent, multi-species, two-dimensional axially symmetric plasma model with detailed finite-rate chemistry of helium-air mixture composition is used to provide insights into the propagation of the plasma jet. The obtained simulation results suggest that the sheath forms near the dielectric tube inner surface and shields the plasma channel from the tube surface. The strong electric field at the edge of the dielectric field enhances the ionization in the air mixing layer; therefore, the streamer head becomes ring-shaped when the streamer runs out of the tube. The avalanche-to-streamer transition is the main mechanism of streamer advancement. Penning ionization dominates the ionization reactions and increases the electrical conductivity of the plasma channel. The simulation results are supported by experimental observations under similar discharge conditions.

  18. Mechanical and Tribological Performance of Graphite/Silicon Nitride Composites: A Comparison between Pressureless and Spark Plasma Sinter Processing

    NASA Astrophysics Data System (ADS)

    Maiti, Subrata Kr.; Sarkar, Soumya; Wani, Md. Farooq; Das, Probal Kumar

    2015-12-01

    Graphite particle (GP)-reinforced silicon nitride (Si3N4) composites were fabricated using pressureless sintering (PLS) and spark plasma sintering (SPS) in the presence of Y2O3-AlN-SiO2 ternary system. Different densification behaviors of the specimens fabricated by PLS and SPS were observed. While increasing GP content drastically reduced matrix densification during PLS at 2023 K (1750 °C) with 2 hours dwell, SPS at 1923 K (1650 °C) for only 10 minute under 50 MPa pressure resulted in much dense composites even up to 3.5 wt pct GP loading. Mechanical and tribological characterizations revealed that SPS-ed composites can offer improved performance compared to pure Si3N4. SPS-ed 1.5 wt pct GP/Si3N4 composite offered the highest resistance to wear up to 20 N normal load. Wear rate ( W R) of that composite reduced by ~24 pct than that obtained for pure Si3N4 ( W R ≈ 1.14 × 10-3 mm3/N m). Furthermore, W R of SPS-ed 2.5 wt pct GP/Si3N4 composite at F N = 10 to 20 N was found to be only ~1/8th of W R values of PLS-ed 2.5 wt pct GP/Si3N4 composite (10N W R ≈ 6.61 × 10-3 mm3/Nm; 20N W R ≈ 9.45 × 10-3 mm3/Nm). Present study indicated promising opportunity of SPS for fabricating improved Si3N4 composites through GP addition. The reinforcing particles not only rendered its self-lubrication effect to SPS consolidated composites but also significantly promoted the rate of matrix densification during SPS cycle by the virtue of its high thermal and electrical conducting nature.

  19. Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Oye, Michael M.; Mattord, Terry J.; Hallock, Gary A.; Bank, Seth R.; Wistey, Mark A.; Reifsnider, Jason M.; Ptak, Aaron J.; Yuen, Homan B.; Harris, James S.; Holmes, Archie L.

    2007-11-01

    This letter studies the effects of atomic N, metastable N2*, and ionic species on the optical properties of dilute nitride materials. Ga0.8In0.2N0.01As0.99 was grown using a 1% N2 in Ar gas mix from an Applied-Epi Unibulb™ rf plasma source. Isonitrogen samples with and without ions were studied using various plasma operating conditions. Optical emission spectrometry was used to characterize relative proportions of different active nitrogen plasma species (atomic N and metastable N2*). Samples grown without ions and with a higher proportion of atomic N resulted in the best overall material quality, although this improvement was observed at high annealing temperatures. At lower annealing temperatures, increased blueshifts were observed for samples grown with a higher proportion of atomic N; however, there was no noticeable influence of ions on blueshift regardless of whether atomic N or metastable N2* was the dominant species present in the plasma. The key implication of this work is that it helps to elucidate a possible reason for some of the contradictory reports in the literature. The ions are not solely responsible for the commonly reported "plasma damage." Furthermore, we demonstrate herein that atomic N and metastable N2* each have different effects on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy.

  20. Streptococci biofilm decontamination on teeth by low-temperature air plasma of dc corona discharges

    NASA Astrophysics Data System (ADS)

    Kovalóvá, Z.; Zahoran, M.; Zahoranová, A.; Machala, Z.

    2014-06-01

    Non-thermal plasmas of atmospheric pressure air direct current corona discharges were investigated for potential applications in dental medicine. The objective of this ex vivo study was to apply cold plasmas for the decontamination of Streptococci biofilm grown on extracted human teeth, and to estimate their antimicrobial efficiency and the plasma's impact on the enamel and dentine of the treated tooth surfaces. The results show that both positive streamer and negative Trichel pulse coronas can reduce bacterial population in the biofilm by up to 3 logs in a 10 min exposure time. This bactericidal effect can be reached faster (within 5 min) by electrostatic spraying of water through the discharge onto the treated tooth surface. Examination of the tooth surface after plasma exposure by infrared spectroscopy and scanning electron microscopy did not show any significant alteration in the tooth material composition or the tooth surface structures.

  1. Study on transport of negative ion plasma using dc laser photodetachment method

    SciTech Connect

    Shimamoto, S.; Kasuya, T.; Kimura, Y.; Miyamoto, N.; Wada, M.; Matsumoto, Y.

    2010-02-15

    Transport of negative ion containing plasma was studied in a hydrogen plasma by injecting a semiconductor laser to make an electron density perturbation by photodetachment of negative ions. Change due to laser irradiation on electron saturation current to a Langmuir probe and that on electron current extracted through an orifice biased at the anode potential were measured phase sensitively by a lock-in-amplifier. The measured transport velocity of the negative ion containing plasma was about 1.4x10{sup 5} cm/s for both cases. The photodetachment signal measured through the orifice had given a larger ratio of negative ion density to electron density. Change in transport of negative ion containing plasma around the Langmuir probe has been also investigated by detecting photodetachment signal onto electron current extracted through an orifice.

  2. Glovebox enclosed dc plasma source for the determination of metals in plutonium

    SciTech Connect

    Morris, W.F.

    1986-01-15

    The direct current plasma source of a Beckman Spectraspan IIIB emission spectrometer was enclosed in a glovebox at Lawrence Livermore National Laboratory in December 1982. Since that time, the system has been used for the routine determination of alloy and impurity metals in plutonium. This paper presents the systematic steps involved in developing the glovebox and gives information regarding performance of the plasma in the glovebox and the effectiveness of containment of plutonium. 8 refs., 9 figs., 3 tabs.

  3. Frictional and structural characterization of ion-nitrided low and high chromium steels

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1985-01-01

    Low Cr steels AISI 41410, AISI 4340, and high Cr austenitic stainless steels AISI 304, AISI 316 were ion nitrided in a dc glow discharge plasma consisting of a 75 percent H2 - 25 percent N2 mixture. Surface compound layer phases were identified, and compound layer microhardness and diffusion zone microhardness profiles were established. Distinct differences in surface compound layer hardness and diffusion zone profiles were determined between the low and high Cr alloy steels. The high Cr stainless steels after ion nitriding displayed a hard compound layer and an abrupt diffusion zone. The compound layers of the high Cr stainless steels had a columnar structure which accounts for brittleness when layers are exposed to contact stresses. The ion nitrided surfaces of high and low Cr steels displayed a low coefficient of friction with respect to the untreated surfaces when examined in a pin and disk tribotester.

  4. Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers.

    PubMed

    Andringa, Anne-Marije; Perrotta, Alberto; de Peuter, Koen; Knoops, Harm C M; Kessels, Wilhelmus M M; Creatore, Mariadriana

    2015-10-14

    Encapsulation of organic (opto-)electronic devices, such as organic light-emitting diodes (OLEDs), photovoltaic cells, and field-effect transistors, is required to minimize device degradation induced by moisture and oxygen ingress. SiNx moisture permeation barriers have been fabricated using a very recently developed low-temperature plasma-assisted atomic layer deposition (ALD) approach, consisting of half-reactions of the substrate with the precursor SiH2(NH(t)Bu)2 and with N2-fed plasma. The deposited films have been characterized in terms of their refractive index and chemical composition by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier-transform infrared spectroscopy (FTIR). The SiNx thin-film refractive index ranges from 1.80 to 1.90 for films deposited at 80 °C up to 200 °C, respectively, and the C, O, and H impurity levels decrease when the deposition temperature increases. The relative open porosity content of the layers has been studied by means of multisolvent ellipsometric porosimetry (EP), adopting three solvents with different kinetic diameters: water (∼0.3 nm), ethanol (∼0.4 nm), and toluene (∼0.6 nm). Irrespective of the deposition temperature, and hence the impurity content in the SiNx films, no uptake of any adsorptive has been observed, pointing to the absence of open pores larger than 0.3 nm in diameter. Instead, multilayer development has been observed, leading to type II isotherms that, according to the IUPAC classification, are characteristic of nonporous layers. The calcium test has been performed in a climate chamber at 20 °C and 50% relative humidity to determine the intrinsic water vapor transmission rate (WVTR) of SiNx barriers deposited at 120 °C. Intrinsic WVTR values in the range of 10(-6) g/m2/day indicate excellent barrier properties for ALD SiNx layers as thin as 10 nm, competing with that of state-of-the-art plasma-enhanced chemical vapor-deposited SiNx layers of a few hundred

  5. Effect of Feed Forms on the Results of Melting of Fly Ash by a DC Plasma Arc Furnace

    NASA Astrophysics Data System (ADS)

    Chen, Mingzhou; Meng, Yuedong; Shi, Jiabiao; Ni, Guohua; Jiang, Yiman; Yu, Xinyao; ZHAO, Peng

    2009-10-01

    Fly ash from a municipal solid waste incinerator (MSWI) without preprocessing (original fly ash, OFA) was melted by a direct current (DC) plasma arc furnace to investigate how the feed forms governed the results. Dioxins in flue gas from stack and bag-filter ash (BFA) were detected. The distribution of heavy metals of Pb, Cd, As, and Cr along the flue gas process system was analyzed. Through a comparison of the results for dioxins and heavy metals in this study and previous work, carrying-over of fly ash particles with the flue gas stream can be deduced. Based on the magnetic induction equation and Navier-Stokes equations, a magnetohydrodynamic (MHD) model for the plasma arc was developed to describe the particle-carrying effect. The results indicate that, a. when melted, the feed forms of MSWI fly ash affect the results significantly; b. it is not preferable to melt MSWI fly ash directly, and efforts should be made to limit the mass transfer of OFA from the plasma furnace.

  6. III-Nitride Dry Etching - Comparison of Inductively Coupled Plasma Chemistries

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Donovan, S.M.; Hahn, Y-B.; Han, J.; Hays, D.C.; MacKenzie, J.D.; Pearton, S.J.; Shul, R.J.

    1998-11-10

    A systematic study of the etch characteristics of GaN, AlN and InN has been performed with boron halides- (BI{sub 3} and BBr{sub 3}) and interhalogen- (ICl and IBr) based Inductively Coupled Plasmas. Maximum etch selectivities of -100:1 were achieved for InN over both GaN and AlN in the BI{sub 3} mixtures due to the relatively high volatility of the InN etch products and the lower bond strength of InN. Maximum selectivies of- 14 for InN over GaN and >25 for InN over AlN were obtained with ICl and IBr chemistries. The etched surface morphologies of GaN in these four mixtures are similar or better than those of the control sample.

  7. Effects of annealing in silicon nitride film deposited by inductively coupled plasma CVD on GaN

    NASA Astrophysics Data System (ADS)

    Liu, Xiu-juan; Wang, Ni-li; Zhang, Yan; Li, Xiang-yang

    2014-11-01

    Silicon nitride (SiNx) films on GaN were deposited, using the inductively coupled plasma chemical vapor deposition (ICPCVD) method with different radio-frequency chuck power (RF power). After deposition, all the films were annealed at 750° in N2, and some pins and bubbles were observed on the surface of some films, but this phenomenon was not observed on the films which were deposited with RF power=0W, as well as films deposited by a two-step-deposition method, which was consisted of setting RF power=0W at the beginning, and setting RF power=2W after that. To study the mechanism of origin of these pins and bubbles, Atomic force microscopy(AFM) was performed to study surface morphology and measure the height of the pins and bubbles, it was found that the height of bubbles was about 300nm, and the depth of pins was about 300nm, which were almost the same as the film thickness. It was showed that the pins and bubbles were originated from gas escaping from the inner films after high-temperature annealing. X-ray photoelectron spectra(XPS) was used to characterize the chemical composition of the films before and after annealing, independently. It was found that, on GaN-SiNx interface and SiNx film surface, the N element content decreased a lot after annealing, but N content remained almost the same in those films with RF power=0W. which indicated that reducing of N content was closely related with those pins and bubbles. RF power increased the plasma energy and caused GaN surface damage. The ion bombardment broke some N-Si bonds and N-Ga bonds, as a result some N reactants didn't perform as Si-N bond, but performed in other bonds such as N-H bonds or N-N bonds, and a high-temperature annealing process would cause NH3 or N2 escape from the film. The pins were voids which resulted from the film broken by the gas, and the bubbles came from bulge resulted from gas escape.

  8. Consolidation and DC magnetic properties of nanocrystalline Supermalloy/iron composite cores prepared by spark plasma sintering

    NASA Astrophysics Data System (ADS)

    Neamţu, B. V.; Chicinaş, I.; Isnard, O.; Ciascai, I.; Popa, F.; Marinca, T. F.

    2014-03-01

    The spark plasma sintering technique is used to prepare composite compacts starting from nanocrystalline Supermalloy and iron powder. The sintered compacts are investigated by X-ray diffraction, scanning electron microscopy, X-ray microanalysis, electrical resistivity and DC magnetic measurements. It is found that iron addition leads to an enhanced sintering process, the relative density of the compacts increases upon increasing iron content. The mean crystallite size of Supermalloy increases from 19 to 27±2 nm with increasing the iron content from 0% to 50 wt% (for identical sintering conditions). The interface created during the sintering process between iron and Supermalloy particles has a wide range of chemical composition including that corresponding to Rhometal like alloys. This leads to an increase of the electrical resistivity and coercivity of the compacts. The saturation induction and maximum relative permeability increase by 58% and 143% respectively, when the iron content increases up to 50 wt%.

  9. A dc arc plasma torch as a tailored heat source for thermohydraulic simulation of proton beam target interaction in ADSS

    NASA Astrophysics Data System (ADS)

    Ghorui, S.; Sahasrabudhe, S. N.; Murthy, P. S. S.; Das, A. K.

    2006-11-01

    Currently, research on accelerator driven subcritical systems (ADSS) is gaining significance due to their high safety levels and extremely attractive potential in terms of both thorium utilization and nuclear waste transmutation. While high energy and high current proton beams are being built worldwide, intensive efforts are being undertaken in parallel towards the development of complex lead bismuth eutectic target systems. The major focus is directed towards understanding of the material compatibility and detailed thermohydraulic simulation of the liquid metal flow. The requisite heat flux is being deposited using innovative and easily controllable heat sources. This paper presents an experimental and simulation study to explore the potential of using dc arc plasma torches as a tailored heat source for thermohydraulic simulation of proton beam-target interaction in such systems.

  10. Grassroots Advancement Plasma Physics: The Creation of a Dc Glow Discharge Tube for a high school classroom

    NASA Astrophysics Data System (ADS)

    Onumah, Henrietta; Sheth, Niraj; Gershman, Sophia; Post Zwicker, Andrew

    2002-11-01

    The objective of the project is to create a safe, affordable, portable, computer interactive, and multifunctional DC glow discharge tube for use in a typical high school physics classroom. Our goal is to use this device not only to capture and cerate interest in plasma physics but as a tool to engage students in an active exploration of a variety of physics topics. We present the design, operation and labs created with our discharge tube. We are creating a selection of labs ranging from current/voltage relationships to spectroscopy that can be done on our setup. We have evaluated the vacuum chamber material- glass vs. plastic, our electrode spacing- a fixed vs. variable, external electronics with an emphasis on the power supply, safety and ease of use. Our design is an accessible 6 inch long tube with an inner diameter of 2 inches, which attains low pressure of about 20- 40 mTorr and is computer interactive.

  11. Interaction of DC Microhollow Cathode Discharge Plasma Micro Jet with Liquid Media

    NASA Astrophysics Data System (ADS)

    Zhu, Weidong; Lopez, Jose; Becker, Kurt

    2008-10-01

    There have been different approaches in studying the interaction between plasma and liquid, such as sustained plasmas in contact with liquids and pulsed electric discharge in liquids. Recently, we have discovered that stable plasma can be sustained within a gas cavity maintained inside liquid media. A prototype device with key dimensions in sub-millimeter range were operated successfully in de-ionized water and turbo molecular pump oil with ambient air, pure nitrogen or pure oxygen used as the operating gas. Hydrogen Peroxide production in de-ionized water with ambient air as the working gas is estimated to be about 80 mg/L after 15 minutes plasma jet-water interaction while energy consumption is only about 8-10 W. With the radicals readily generated and directly introduced into the liquid media, it could lead to applications such as in-liquid bio-waste treatment, bio-rich liquid modification, in-situ monitoring/sensing, and filtration of by-products from VOC treatment by plasma.

  12. Pressure and arc voltage coupling in dc plasma torches: Identification and extraction of oscillation modes

    SciTech Connect

    Rat, V.; Coudert, J. F.

    2010-08-15

    This work is devoted to the instabilities occurring in a plasma torch, such as those found in plasma spraying. These instabilities are responsible for a lack of reproducibility of coatings properties, especially in the case of suspension plasma spraying that is an innovative way to obtain thin coatings of submicron-sized particles. Strong Helmholtz oscillations are highlighted in the plasma flow and it is demonstrated that they overlap with different acoustic modes in addition with the more commonly admitted ''restrike'' mode, the later being due to rearcing events in the arc region. The instabilities occur in the arc voltage but it is experimentally shown in this paper that the pressure within the torch body presents the same kind of instabilities. Besides, a numerical filtering technique has been adapted to isolate the different instability components. The operating parameters of the plasma torch were varied in order to highlight their influence on the amplitude of the different modes, both for the arc voltage and the pressure.

  13. The use of ion chromatography-dc plasma atomic emission spectrometry for the speciation of trace metals

    SciTech Connect

    Urasa, I.T.

    1991-09-20

    The original objects of this research program were: to interface d.c. plasma atomic emission spectrometer with an ion chromatograph; to characterize and optimize the combined systems for application in the speciation of metals in aqueous solutions; to use this system in the study of the solution chemistry of various metals; and to find ways in which the measurement sensitivity of the method can be enhanced, thereby allowing the detection of metal species at low ppb concentration levels. This approach has been used to study the chemistry of and speciate several elements in solution including: arsenic, chromium, iron, manganese, nickel phosphorus, platinum, selenium, and vanadium. During the course of this research, we have found that the solution chemistry of the elements studied and the speciation data obtained can vary considerably depending on the solution, and the chromatographic conditions employed. The speciation of chromium, iron, and vanadium was found to be highly influenced by the acidity of the sample. The element selective nature of the d.c. plasma detector allows these changes to be monitored, thereby providing quantitative information on the new moieties formed. New approaches are being developed including the use of chelating ligands as preconcentration agents for purposes of reducing further the detection limits of the elements of interest and to improve the overall element speciation scheme. New thrusts are being directed towards the employment of post-column derivatization method coupled with colorimetric measurements to detect and quantify metal species eluting from the chromatographic column. The influence of sample acidity on these investigations will be carefully evaluated. These new thrusts are described in the accompanying Project Renewal Proposal.

  14. Dry etching of III-V nitrides

    SciTech Connect

    Pearton, S.J.; Shul, R.J.; McLane, G.F.; Constantine, C.

    1995-12-01

    The chemical inertness and high bond strengths of the III-V nitrides lead to slower plasma etching rates than for more conventional III-V semiconductors under the same conditions. High ion density conditions (>3{times}l0{sup 9}cm{sup {minus}3}) such as those obtained in ECR or magnetron reactors produce etch rates up to an order of magnitude higher than for RIE, where the ion densities are in the 10{sup 9}cm{sup {minus}3} range. We have developed smooth anisotropic dry etches for GaN, InN, AlN and their alloys based on Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar, BCl{sub 3}/Ar, Cl{sub 2}/H{sub 2}, Cl{sub 2}/SF{sub 6}, HBr/H{sub 2} and HI/H{sub 2} plasma chemistries achieving etch rates up to {approximately}4,000{angstrom}/min at moderate dc bias voltages ({le}-150V). Ion-induced damage in the nitrides appears to be less apparent than in other III-V`s. One of the key remaining issues is the achievement of high selectivities for removal of one layer from another.

  15. Pressureless sintering of plasma-reacted nanosemicrystalline silicon nitride ceramics with doped sintering additives

    NASA Astrophysics Data System (ADS)

    Ryu, Kevin Hojun

    For the past few years, synthesis and consolidation of ceramics using nanoparticles have been a focus of much research. The obvious advantage is their low process temperatures (<200°C). In addition, the process results in super-plastic deformation, and drastically enhances the mechanical properties of the ceramics. Recently, a plasma-assisted chemical reaction was adopted to produce nanosize Si3N4 powders that have the characteristics of sintering additive elements on individual particles. Homogeneous size distribution of the additives can eliminate inhomogeneous shrinkage of the sintered body during the mixing process. In this work, the behavior of plasma-reacted nano-size Si3N 4 powders intrinsically doped with sintering additives was explored. These particles were doped with Y2O3 and Al2O 3, and processed under a low process temperature in the absence of pressurizing equipment. Several experiments were performed to address the effects of the powders on the phase transformation rate from a to b phase, and on the mechanical properties due to the microstructure evolution under different sintering conditions. The existence of sintering additive elements in each individual powder was verified by electron microscope and energy dispersive spectroscopy. The doped powders were 60% crystalline and had a specific surface area of ˜24 m2/g. The powders showed excellent sinterability at low temperature, compared to the other powders used in commercial processes. In spite of the low process temperature, the a→ b phase transformation occurred rapidly. The homogeneous distribution of Si3N4 powders was speculated as the reason for fast phase transformation. In addition, evolution of the microstructures in different sintering conditions produced materials with vastly different mechanical properties. Thus, one may obtain ceramics with desired mechanical properties by carefully controlling the sintering additives. Finally, a mathematical model, based on the previous work done by

  16. Plasma nitriding induced growth of Pt-nanowire arrays as high performance electrocatalysts for fuel cells.

    PubMed

    Du, Shangfeng; Lin, Kaijie; Malladi, Sairam K; Lu, Yaxiang; Sun, Shuhui; Xu, Qiang; Steinberger-Wilckens, Robert; Dong, Hanshan

    2014-01-01

    In this work, we demonstrate an innovative approach, combing a novel active screen plasma (ASP) technique with green chemical synthesis, for a direct fabrication of uniform Pt nanowire arrays on large-area supports. The ASP treatment enables in-situ N-doping and surface modification to the support surface, significantly promoting the uniform growth of tiny Pt nuclei which directs the growth of ultrathin single-crystal Pt nanowire (2.5-3 nm in diameter) arrays, forming a three-dimensional (3D) nano-architecture. Pt nanowire arrays in-situ grown on the large-area gas diffusion layer (GDL) (5 cm(2)) can be directly used as the catalyst electrode in fuel cells. The unique design brings in an extremely thin electrocatalyst layer, facilitating the charge transfer and mass transfer properties, leading to over two times higher power density than the conventional Pt nanoparticle catalyst electrode in real fuel cell environment. Due to the similar challenges faced with other nanostructures and the high availability of ASP for other material surfaces, this work will provide valuable insights and guidance towards the development of other new nano-architectures for various practical applications. PMID:25241800

  17. Plasma nitriding induced growth of Pt-nanowire arrays as high performance electrocatalysts for fuel cells

    NASA Astrophysics Data System (ADS)

    Du, Shangfeng; Lin, Kaijie; Malladi, Sairam K.; Lu, Yaxiang; Sun, Shuhui; Xu, Qiang; Steinberger-Wilckens, Robert; Dong, Hanshan

    2014-09-01

    In this work, we demonstrate an innovative approach, combing a novel active screen plasma (ASP) technique with green chemical synthesis, for a direct fabrication of uniform Pt nanowire arrays on large-area supports. The ASP treatment enables in-situ N-doping and surface modification to the support surface, significantly promoting the uniform growth of tiny Pt nuclei which directs the growth of ultrathin single-crystal Pt nanowire (2.5-3 nm in diameter) arrays, forming a three-dimensional (3D) nano-architecture. Pt nanowire arrays in-situ grown on the large-area gas diffusion layer (GDL) (5 cm2) can be directly used as the catalyst electrode in fuel cells. The unique design brings in an extremely thin electrocatalyst layer, facilitating the charge transfer and mass transfer properties, leading to over two times higher power density than the conventional Pt nanoparticle catalyst electrode in real fuel cell environment. Due to the similar challenges faced with other nanostructures and the high availability of ASP for other material surfaces, this work will provide valuable insights and guidance towards the development of other new nano-architectures for various practical applications.

  18. Plasma nitriding induced growth of Pt-nanowire arrays as high performance electrocatalysts for fuel cells

    PubMed Central

    Du, Shangfeng; Lin, Kaijie; Malladi, Sairam K.; Lu, Yaxiang; Sun, Shuhui; Xu, Qiang; Steinberger-Wilckens, Robert; Dong, Hanshan

    2014-01-01

    In this work, we demonstrate an innovative approach, combing a novel active screen plasma (ASP) technique with green chemical synthesis, for a direct fabrication of uniform Pt nanowire arrays on large-area supports. The ASP treatment enables in-situ N-doping and surface modification to the support surface, significantly promoting the uniform growth of tiny Pt nuclei which directs the growth of ultrathin single-crystal Pt nanowire (2.5–3 nm in diameter) arrays, forming a three-dimensional (3D) nano-architecture. Pt nanowire arrays in-situ grown on the large-area gas diffusion layer (GDL) (5 cm2) can be directly used as the catalyst electrode in fuel cells. The unique design brings in an extremely thin electrocatalyst layer, facilitating the charge transfer and mass transfer properties, leading to over two times higher power density than the conventional Pt nanoparticle catalyst electrode in real fuel cell environment. Due to the similar challenges faced with other nanostructures and the high availability of ASP for other material surfaces, this work will provide valuable insights and guidance towards the development of other new nano-architectures for various practical applications. PMID:25241800

  19. Nanoparticle formation and dusty plasma effects in DC sputtering discharge with graphite cathode

    NASA Astrophysics Data System (ADS)

    Michau, A.; Arnas, C.; Lombardi, G.; Bonnin, X.; Hassouni, K.

    2016-02-01

    We developed a model for the nucleation, growth and transport of carbon dust particles in a DC discharge. The carbon source comes from the sputtering of a graphite cathode resulting in the production of primary clusters and then of nanoparticles. We consider the ionic cluster growth as well as the particle growth and charging and the influence of both on the discharge equilibrium. We found that the discharge becomes electronegative for long duration when particle density reaches 109 cm-3 and particle size 45 nm. The corresponding transition modifies the electric field profile in the vicinity of the field reversal region in the negative glow. We then analyze the space and time evolution of the different discharge characteristics and the mechanisms involved in the discharge. We showed that particle density is governed by nucleation, coagulation and transport, while particle size is mainly governed by the deposition of the small neural clusters emitted at the cathode on the particle surface.

  20. Initial Results of DC Electric Fields, Associated Plasma Drifts, Magnetic Fields, and Plasma Waves Observed on the C/NOFS Satellite

    NASA Technical Reports Server (NTRS)

    Pfaff, R.; Freudenreich, H.; Bromund, K.; Klenzing, J.; Rowland, D.; Maynard, N.

    2010-01-01

    Initial results are presented from the Vector Electric Field Investigation (VEFI) on the Air Force Communication/Navigation Outage Forecasting System (C/NOFS) satellite, a mission designed to understand, model, and forecast the presence of equatorial ionospheric irregularities. The VEFI instrument includes a vector DC electric field detector, a fixed-bias Langmuir probe operating in the ion saturation regime, a flux gate magnetometer, an optical lightning detector, and associated electronics including a burst memory. Compared to data obtained during more active solar conditions, the ambient DC electric fields and their associated E x B drifts are variable and somewhat weak, typically < 1 mV/m. Although average drift directions show similarities to those previously reported, eastward/outward during day and westward/downward at night, this pattern varies significantly with longitude and is not always present. Daytime vertical drifts near the magnetic equator are largest after sunrise, with smaller average velocities after noon. Little or no pre-reversal enhancement in the vertical drift near sunset is observed, attributable to the solar minimum conditions creating a much reduced neutral dynamo at the satellite altitude. The nighttime ionosphere is characterized by larger amplitude, structured electric fields, even where the plasma density appears nearly quiescent. Data from successive orbits reveal that the vertical drifts and plasma density are both clearly organized with longitude. The spread-F density depletions and corresponding electric fields that have been detected thus far have displayed a preponderance to appear between midnight and dawn. Associated with the narrow plasma depletions that are detected are broad spectra of electric field and plasma density irregularities for which a full vector set of measurements is available for detailed study. Finally, the data set includes a wide range of ELF/VLF/HF oscillations corresponding to a variety of plasma waves

  1. Structure of the local environment of titanium atoms in multicomponent nitride coatings produced by plasma-ion techniques

    NASA Astrophysics Data System (ADS)

    Krysina, O. V.; Timchenko, N. A.; Koval, N. N.; Zubavichus, Ya V.

    2016-01-01

    An experiment was performed to examine the X-ray Absorption Near-Edge Structure (XANES) and the Extended X-ray Absorption Fine Structure (EXAFS) near the K-edge of titanium in nanocrystalline titanium nitride coatings containing additives of copper, silicon, and aluminum. Using the observation data, the structure parameters of the local environment of titanium atoms have been estimated for the coatings. According to crystallographic data, the Ti-N distance in the bulk phase of titanium nitride is 2.12 Å and the Ti-Ti distance is 3.0 Å. Nearly these values have been obtained for the respective parameters of the coatings. The presence of copper as an additive in a TiN coating increases the Ti-N distance inappreciably compared to that estimated for titanium nitride, whereas addition of silicon decreases the bond distance. It has been revealed that the copper and silicon atoms in Ti-Cu-N and Ti-Si-N coatings do not enter into the crystallographic phase of titanium nitride and do not form bonds with titanium and nitrogen, whereas the aluminum atoms in Ti-Al-N coatings form intermetallic phases with titanium and nitride phases.

  2. Plasticity and ab initio characterizations on Fe 4N produced on the surface of nanocrystallized 18Ni-maraging steel plasma nitrided at lower temperature

    NASA Astrophysics Data System (ADS)

    Yan, M. F.; Wu, Y. Q.; Liu, R. L.

    2009-08-01

    18Ni-maraging steel has been entirely nanocrystallized by a series of processes including solution treatment, hot-rolling deformation, cold-drawn deformation and direct electric heating. The plasma nitriding of nanocrystallized 18Ni-maraging steel was carried out at 410 °C for 3 h and 6 h in a mixture gas of 20% N 2 + 80% H 2 with a pressure of 400 Pa. The surface phase constructions and nitrogen concentration profile in surface layer were analyzed using an X-ray diffractometer (XRD) and the glow discharge spectrometry (GDS), respectively. The results show that an about 2 μm thick compound layer (mono-phase γ'-Fe 4N) can be produced on the top of the surface layer of nanocrystallized 18Ni-maraging steel plasma nitrided at 410 °C for 6 h. The measured hardness value of the nitrided surface is 11.6 GPa. More importantly, the γ'-Fe 4N phase has better plasticity, i.e., its plastic deformation energy calculated from the load-displacement curve obtained by nano-indentation tester is close to that of nanocrystallized 18Ni-maraging steel. Additionally, the mechanical properties of γ'-Fe 4N phase were also characterized by first-principles calculations. The calculated results indicate that the hardness value and the ratio of bulk to shear modulus ( B/ G) of the γ'-Fe 4N phase are 10.15 GPa and 3.12 (>1.75), respectively. This demonstrates that the γ'-Fe 4N phase has higher hardness and better ductility.

  3. The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD.

    PubMed

    Sahu, B B; Yin, Y Y; Tsutsumi, T; Hori, M; Han, Jeon G

    2016-05-14

    Control of the plasma densities and energies of the principal plasma species is crucial to induce modification of the plasma reactivity, chemistry, and film properties. This work presents a systematic and integrated approach to the low-temperature deposition of hydrogenated amorphous silicon nitride films looking into optimization and control of the plasma processes. Radiofrequency (RF) and ultrahigh frequency (UHF) power are combined to enhance significantly the nitrogen plasma and atomic-radical density to enforce their effect on film properties. This study presents an extensive investigation of the influence of combining radiofrequency (RF) and ultrahigh frequency (UHF) power as a power ratio (PR = RF : UHF), ranging from 4 : 0 to 0 : 4, on the compositional, structural, and optical properties of the synthesized films. The data reveal that DF power with a characteristic bi-Maxwellian electron energy distribution function (EEDF) is effectively useful for enhancing the ionization and dissociation of neutrals, which in turn helps in enabling high rate deposition with better film properties than that of SF operations. Utilizing DF PECVD, a wide-bandgap of ∼3.5 eV with strong photoluminescence features can be achieved only by using a high-density plasma and high nitrogen atom density at room temperature. The present work also proposes the suitability of the DF PECVD approach for industrial applications. PMID:27109293

  4. Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology

    SciTech Connect

    Burke, Micheal Blake, Alan; Povey, Ian M.; Schmidt, Michael; Petkov, Nikolay; Carolan, Patrick; Quinn, Aidan J.

    2014-05-15

    A design of experiments methodology was used to optimize the sheet resistance of titanium nitride (TiN) films produced by plasma-enhanced atomic layer deposition (PE-ALD) using a tetrakis(dimethylamino)titanium precursor in a N{sub 2}/H{sub 2} plasma at low temperature (250 °C). At fixed chamber pressure (300 mTorr) and plasma power (300 W), the plasma duration and N{sub 2} flow rate were the most significant factors. The lowest sheet resistance values (163 Ω/sq. for a 20 nm TiN film) were obtained using plasma durations ∼40 s, N{sub 2} flow rates >60 standard cubic centimeters per minute, and purge times ∼60 s. Time of flight secondary ion mass spectroscopy data revealed reduced levels of carbon contaminants in the TiN films with lowest sheet resistance (163 Ω/sq.), compared to films with higher sheet resistance (400–600 Ω/sq.) while transmission electron microscopy data showed a higher density of nanocrystallites in the low-resistance films. Further significant reductions in sheet resistance, from 163 Ω/sq. to 70 Ω/sq. for a 20 nm TiN film (corresponding resistivity ∼145 μΩ·cm), were achieved by addition of a postcycle Ar/N{sub 2} plasma step in the PE-ALD process.

  5. Propagation characteristics of dust-acoustic waves in presence of a floating cylindrical object in the DC discharge plasma

    NASA Astrophysics Data System (ADS)

    Choudhary, Mangilal; Mukherjee, S.; Bandyopadhyay, P.

    2016-08-01

    The experimental observation of the self-excited dust acoustic waves (DAWs) and its propagation characteristics in the absence and presence of a floating cylindrical object is investigated. The experiments are carried out in a direct current (DC) glow discharge dusty plasma in a background of argon gas. Dust particles are found levitated at the interface of plasma and cathode sheath region. The DAWs are spontaneously excited in the dust medium and found to propagate in the direction of ion drift (along the gravity) above a threshold discharge current at low pressure. Excitation of such a low frequency wave is a result of the ion-dust streaming instability in the dust cloud. Characteristics of the propagating dust acoustic wave get modified in the presence of a floating cylindrical object of radius larger than that of the dust Debye length. Instead of propagation in the vertical direction, the DAWs are found to propagate obliquely in the presence of the floating object (kept either vertically or horizontally). In addition, a horizontally aligned floating object forms a wave structure in the cone shaped dust cloud in the sheath region. Such changes in the propagation characteristics of DAWs are explained on the basis of modified potential (or electric field) distribution, which is a consequence of coupling of sheaths formed around the cylindrical object and the cathode.

  6. dc field-emission analysis of GaAs and plasma-source ion-implanted stainless steel

    SciTech Connect

    C. Hernandez; T. Wang; T. Siggins; D. Bullard; H. F. Dylla; C. Reece; N. D. Theodore; D. M. Manos

    2003-06-01

    Field-emission studies have been performed on a GaAs wafer and a sample of its stainless-steel (SS) support electrode that are part of a photocathode gun for the 10 kW Upgrade infrared free electron laser at Jefferson Lab. The objective of the studies presented here is to characterize the effect of both the cleanliness of the wafer and the plasma-source ion-implanted layer on the electrode to suppress field emission. Field emission is the limiting factor to achieve the required 6 MV/m at the surface of the wafer. Potential field emitters are first located on the surface of 1 in. diameter samples with a dc scanning field-emission microscope at 60 MV/m, then each emitter is characterized in a scanning electron microscope equipped with an energy dispersive spectrometer. The GaAs wafer was hydrogen cleaned before the study. The results show three emitters caused by indium contamination during wafer handling. The GaAs wafer thus shows good high-voltage characteristics and the need to maintain cleanliness during handling. The SS sample is hand polished with diamond paste to a 1-m surface finish, then implanted with N2/SiO2 in a plasma-source ion-implantation chamber in preparation for the field-emission studies.

  7. Growth mechanism for spherical carbon particles in a dc methane plasma

    SciTech Connect

    Nagai, Tatsuzo; Feng Zongbao; Kono, Akihiko; Shoji, Fumiya

    2008-05-15

    The growth mechanism for spherical carbon particles of micron sizes observed in a vertically excited CH{sub 4}/Ar columnar plasma [F. Shoji, Z. Feng, A. Kono, and T. Nagai, Appl. Phys. Lett. 89, 171504 (2006)] is investigated theoretically, based on a model in which the particles are negatively charged in the plasma sheath region where they grow by capturing graphite onions with a diameter of ca. 10 nm and a positive charge. A balance of gravity and electric force keeps the particles in the sheath region during their growth. It is found that the particle radius initially increases linearly with time and then approaches a saturation radius, and that the center of gravity of the particle executes a simple harmonic oscillation about its balance position with a characteristic frequency of the order of 10 Hz determined by its specific charge, gravity, and sheath structure.

  8. Morphology of zirconia particles exposed to D.C. arc plasma jet

    NASA Technical Reports Server (NTRS)

    Zaplatynsky, Isidor

    1987-01-01

    Zirconia particles were sprayed into water with an arc plasma gun in order to determine the effect of various gun operating parameters on their morphology. The collected particles were examined by XRD and SEM techniques. A correlation was established between the content of spherical (molten) particles and the operating parameters by visual inspection and regression analysis. It was determined that the composition of the arc gas and the power input were the predominant parameters that affected the melting of zirconia particles.

  9. Argon–oxygen dc magnetron discharge plasma probed with ion acoustic waves

    SciTech Connect

    Saikia, Partha Saikia, Bipul Kumar; Goswami, Kalyan Sindhu; Phukan, Arindam

    2014-05-15

    The precise determination of the relative concentration of negative ions is very important for the optimization of magnetron sputtering processes, especially for those undertaken in a multicomponent background produced by adding electronegative gases, such as oxygen, to the discharge. The temporal behavior of an ion acoustic wave excited from a stainless steel grid inside the plasma chamber is used to determine the relative negative ion concentration in the magnetron discharge plasma. The phase velocity of the ion acoustic wave in the presence of negative ions is found to be faster than in a pure argon plasma, and the phase velocity increases with the oxygen partial pressure. Optical emission spectroscopy further confirms the increase in the oxygen negative ion density, along with a decrease in the argon positive ion density under the same discharge conditions. The relative negative ion concentration values measured by ion acoustic waves are compared with those measured by a single Langmuir probe, and a similarity in the results obtained by both techniques is observed.

  10. Analytical interpretation of arc instabilities in a DC plasma spray torch: the role of pressure

    NASA Astrophysics Data System (ADS)

    Rat, V.; Coudert, J. F.

    2016-06-01

    Arc instabilities in a plasma spray torch are investigated experimentally and theoretically thanks to a linear simplified analytical model. The different parameters that determine the useful properties of the plasma jet at the torch exit, such as specific enthalpy and speed, but also pressure inside the torch and time variations of the flow rate are studied. The work is particularly focused on the link between the recorded arc voltage and the pressure in the cathode cavity. A frequency analysis of the recorded voltage and pressure allows the separation of different contributions following their spectral characteristics and highlights a resonance effect due to Helmholtz oscillations; these oscillations are responsible for the large amplitude fluctuations of all the parameters investigated. The influence of heat transfer, friction forces and residence time of the plasma in the nozzle are taken into account, thanks to different characteristics’ times. The volume of the cathode cavity in which the cold gas is stored before entering the arc region appears to be of prime importance for the dynamics of instabilities, particularly for the non-intuitive effect that induces flow-rate fluctuations in spite of the fact that the torch is fed at a constant flow rate.

  11. Destruction of inorganic municipal solid waste incinerator fly ash in a DC arc plasma furnace.

    PubMed

    Zhao, Peng; Ni, Guohua; Jiang, Yiman; Chen, Longwei; Chen, Mingzhou; Meng, Yuedong

    2010-09-15

    Due to the toxicity of dioxins, furans and heavy metals, there is a growing environmental concern on municipal solid waste incinerator (MSWI) fly ash in China. The purpose of this study is directed towards the volume-reduction of fly ash without any additive by thermal plasma and recycling of vitrified slag. This process uses extremely high-temperature in an oxygen-starved environment to completely decompose complex waste into very simple molecules. For developing the proper plasma processes to treat MSWI fly ash, a new crucible-type plasma furnace was built. The melting process metamorphosed fly ash to granulated slag that was less than 1/3 of the volume of the fly ash, and about 64% of the weight of the fly ash. The safety of the vitrified slag was tested. The properties of the slag were affected by the differences in the cooling methods. Water-cooled and composite-cooled slag showed more excellent resistance against the leaching of heavy metals and can be utilized as building material without toxicity problems. PMID:20542633

  12. A Comparison of the Effects of RF Plasma Discharge and Ion Beam Supply on the Growth of Cubic Boron Nitride Films Formed by Laser Physical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kaneda, Kayo; Shibata, Kimihiro

    1994-01-01

    This paper presents a comparison of the effects of RF plasma discharge and ion beam supply on the growth of cubic boron nitride films formed by excimer laser physical vapor deposition (laser PVD). The film structure was analyzed by fourier transformation infrared region (FT-IR) spectroscopy and thin-film X-ray diffraction analysis. The structure of the film deposited with an RF plasma discharge provided between the substrate and target was hexagonal BN. On the other hand, that of the film deposited by irradiating the substrate directly with an ion beam was hexagonal BN (hBN) and cubic BN (cBN). It is thought that direct irradiation of the vapor generated from the target by accelerated ions increased the activation energy of the vapor, with the result that the film structure was changed. Besides irradiating the substrate directly with the ion beam resulted primarily in the etching of hBN while cBN remained.

  13. Correlation of gas-phase composition with film properties in the plasma-enhanced chemical vapor deposition of hydrogenated amorphous carbon nitride films

    NASA Astrophysics Data System (ADS)

    Liu, Dongping; Zhou, Jie; Fisher, Ellen R.

    2007-01-01

    Hydrogenated amorphous carbon nitride (a-C:N:H) films were synthesized from CH4/N2, C2H4/N2, and C2H2/N2 gas mixtures using inductively coupled rf plasmas. These deposition systems were characterized by means of optical emission spectroscopy and mass spectrometry (MS). The effects of varying the nitrogen partial pressure on film growth and film properties were investigated, and experimental results indicate that the hydrocarbon species produced in the gas phase contribute directly to film growth. Although the CN radical is formed in the mixed gas systems, it does not appear to be a factor in controlling the rate of film deposition. The nature and energy of the ions in these systems were explored with MS. No clear dependence of ion energy on mass or plasma conditions was observed. Although films formed in the methane and ethylene systems were relatively smooth, a-C :N:H films prepared from acetylene-nitrogen plasmas had comparatively rough surfaces, most likely as a result of the strong gas-phase polymerization process produced by the ion-molecule reactions, CnHy++C2H2→C(n+2)Hy++H2 (n >1, y =1-3). Correlations between the a-C :N:H growth processes and the gas-phase plasma diagnostic data are discussed.

  14. Plasma nitriding process by direct current glow discharge at low temperature increasing the thermal diffusivity of AISI 304 stainless steel

    SciTech Connect

    Prandel, L. V.; Somer, A.; Assmann, A.; Camelotti, F.; Costa, G.; Bonardi, C.; Jurelo, A. R.; Rodrigues, J. B.; Cruz, G. K.

    2013-02-14

    This work reports for the first time on the use of the open photoacoustic cell technique operating at very low frequencies and at room temperature to experimentally determine the thermal diffusivity parameter of commercial AISI304 stainless steel and AISI304 stainless steel nitrided samples. Complementary measurements of X-ray diffraction and scanning electron microscopy were also performed. The results show that in standard AISI 304 stainless steel samples the thermal diffusivity is (4.0 {+-} 0.3) Multiplication-Sign 10{sup -6} m{sup 2}/s. After the nitriding process, the thermal diffusivity increases to the value (7.1 {+-} 0.5) Multiplication-Sign 10{sup -6} m{sup 2}/s. The results are being associated to the diffusion process of nitrogen into the surface of the sample. Carrying out subsequent thermal treatment at 500 Degree-Sign C, the thermal diffusivity increases up to (12.0 {+-} 2) Multiplication-Sign 10{sup -6} m{sup 2}/s. Now the observed growing in the thermal diffusivity must be related to the change in the phases contained in the nitrided layer.

  15. Plasma nitriding process by direct current glow discharge at low temperature increasing the thermal diffusivity of AISI 304 stainless steel

    NASA Astrophysics Data System (ADS)

    Prandel, L. V.; Somer, A.; Assmann, A.; Camelotti, F.; Costa, G.; Bonardi, C.; Jurelo, A. R.; Rodrigues, J. B.; Cruz, G. K.

    2013-02-01

    This work reports for the first time on the use of the open photoacoustic cell technique operating at very low frequencies and at room temperature to experimentally determine the thermal diffusivity parameter of commercial AISI304 stainless steel and AISI304 stainless steel nitrided samples. Complementary measurements of X-ray diffraction and scanning electron microscopy were also performed. The results show that in standard AISI 304 stainless steel samples the thermal diffusivity is (4.0 ± 0.3) × 10-6 m2/s. After the nitriding process, the thermal diffusivity increases to the value (7.1 ± 0.5) × 10-6 m2/s. The results are being associated to the diffusion process of nitrogen into the surface of the sample. Carrying out subsequent thermal treatment at 500 °C, the thermal diffusivity increases up to (12.0 ± 2) × 10-6 m2/s. Now the observed growing in the thermal diffusivity must be related to the change in the phases contained in the nitrided layer.

  16. Feasibility study of silicon nitride protection of plastic encapsulated semiconductors

    NASA Technical Reports Server (NTRS)

    Peters, J. W.; Hall, T. C.; Erickson, J. J.; Gebhart, F. L.

    1979-01-01

    The application of low temperature silicon nitride protective layers on wire bonded integrated circuits mounted on lead frame assemblies is reported. An evaluation of the mechanical and electrical compatibility of both plasma nitride and photochemical silicon nitride (photonitride) passivations (parallel evaluations) of integrated circuits which were then encapsulated in plastic is described. Photonitride passivation is compatible with all wire bonded lead frame assemblies, with or without initial chip passivation. Plasma nitride passivation of lead frame assemblies is possible only if the chip is passivated before lead frame assembly. The survival rate after the environmental test sequence of devices with a coating of plasma nitride on the chip and a coating of either plasma nitride or photonitride over the assembled device is significantly greater than that of devices assembled with no nitride protective coating over either chip or lead frame.

  17. DC and Structured Electric Fields Observed on the C/NOFS Satellite and Their Association with Longitude, Plasma Density, and Solar Activity

    NASA Technical Reports Server (NTRS)

    Pfaff, Robert; Freudenreich, H.; Rowland, D.; Klenzing, J.

    2012-01-01

    Observations of DC electric fields and associated E x B plasma drifts gathered by the Vector Electric Field Investigation (VEFI) on the Air Force Communication/Navigation Outage Forecasting System (C/NOFS) satellite are presented. We show statistical averages of the vector fields and resulting E x B plasma flows for the first three years of operations as a function of season, longitude, local time, and Fl 0.7 conditions. Magnetic field data from the VEFI science magnetometer are used to compute the plasma flows. Although typically displaying eastward and outward-directed fields during the day and westward and downward-directed fields at night, the data from DC electric field detector often reveal variations from this pattern that depend on longitude, solar activity, and plasma density. Clear "wave-4" tidal effects in both electric field components have been detected and will be presented. Zonal plasma drifts show a marked variation with solar activity and may be used as a proxy for neutral winds at night. Evidence for pre-reversal enhancements in the meridional drifts that depend on solar activity is present for some longitudes, and are corroborated by clear evidence in the plasma density data that the spacecraft journeyed below the F-peak during evenings when the rise in the ionosphere is most pronounced. In addition to DC electric fields, the data reveal considerable electric field structures at large scales (approx 100's of km) that are usually confined to the nightside. Although such electric field structures are typically associated with plasma density depletions and structures, what is surprising is the number of cases in which large amplitude, structured DC electric fields are observed without a significant plasma density counterpart structure, including their appearance at times when the ambient plasma density appears relatively quiescent. We investigate the mapping of structured electric fields along magnetic field lines from distant locations and consider

  18. Density distributions of OH, Na, water vapor, and water mist in atmospheric-pressure dc helium glow plasmas in contact with NaCl solution

    NASA Astrophysics Data System (ADS)

    Sasaki, Koichi; Ishigame, Hiroaki; Nishiyama, Shusuke

    2015-07-01

    This paper reports the density distributions of OH, Na, water vapor and water mist in atmospheric-pressure dc helium glow plasmas in contact with NaCl solution. The densities of OH, Na and H2O had different spatial distributions, while the Na density had a similar distribution to mist, suggesting that mist is the source of Na in the gas phase. When the flow rate of helium toward the electrolyte surface was increased, the distributions of all the species densities concentrated in the neighboring region to the electrolyte surface more significantly. The densities of all the species were sensitive to the electric polarity of the power supply. In particular, we never detected Na and mist when the electrolyte worked as the anode of the dc discharge. Contribution to the topical issue "The 14th International Symposium on High Pressure Low Temperature Plasma Chemistry (HAKONE XIV)", edited by Nicolas Gherardi, Ronny Brandenburg and Lars Stollenwark

  19. Electron Backscatter Diffraction and Transmission Kikuchi Diffraction Analysis of an Austenitic Stainless Steel Subjected to Surface Mechanical Attrition Treatment and Plasma Nitriding.

    PubMed

    Proust, Gwénaëlle; Retraint, Delphine; Chemkhi, Mahdi; Roos, Arjen; Demangel, Clemence

    2015-08-01

    Austenitic 316L stainless steel can be used for orthopedic implants due to its biocompatibility and high corrosion resistance. Its range of applications in this field could be broadened by improving its wear and friction properties. Surface properties can be modified through surface hardening treatments. The effects of such treatments on the microstructure of the alloy were investigated here. Surface Mechanical Attrition Treatment (SMAT) is a surface treatment that enhances mechanical properties of the material surface by creating a thin nanocrystalline layer. After SMAT, some specimens underwent a plasma nitriding process to further enhance their surface properties. Using electron backscatter diffraction, transmission Kikuchi diffraction, energy dispersive spectroscopy, and transmission electron microscopy, the microstructural evolution of the stainless steel after these different surface treatments was characterized. Microstructural features investigated include thickness of the nanocrystalline layer, size of the grains within the nanocrystalline layer, and depth of diffusion of nitrogen atoms within the material. PMID:26139391

  20. Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation

    NASA Astrophysics Data System (ADS)

    Saseendran, Sandeep S.; Saravanan, S.; Raval, Mehul C.; Kottantharayil, Anil

    2016-03-01

    Low temperature oxidation of silicon in plasma ambient is a potential candidate for replacing thermally grown SiO2 films for surface passivation of crystalline silicon solar cells. In this work, we report the growth of silicon oxy-nitride (SiOxNy) film in N2O plasma ambient at 380 °C. However, this process results in trapping of interstitial oxygen within silicon. The impact of this trapped interstitial oxygen on the surface passivation quality is investigated. The interstitial oxygen trapped in silicon was seen to decrease for larger SiOxNy film thickness. Effective minority carrier lifetime (τeff) measurements on n-type float zone silicon wafers passivated by SiOxNy/silicon nitride (SiNv:H) stack showed a decrease in τeff from 347 μs to 68 μs, for larger SiOxNy film thickness due to degradation in interface properties. From high frequency capacitance-voltage measurements, it was concluded that the surface passivation quality was governed by the interface parameters (fixed charge density and interface state density). High temperature firing of the SiOxNy/SiNv:H stack resulted in a severe degradation in τeff due to migration of oxygen across the interface into silicon. However, on using the SiOxNy/SiNv:H stack for emitter surface passivation in screen printed p-type Si solar cells, an improvement in short wavelength response was observed in comparison to the passivation by SiNv:H alone, indicating an improvement in emitter surface passivation quality.

  1. Modelling of the layer evolution during nitriding processes

    SciTech Connect

    Figueroa, U.; Oseguera, J.; Schabes, P.

    1995-12-31

    The evolution of concomitant layers of nitrides is presented. The layer formation is experimentally achieved through two processes: Nitriding with a weakly ionized plasma and nitrogen post-discharge nitriding. The nitriding processes were performed on samples of pure iron and carbon steel. Nitriding temperatures were close but different from the eutectoid transformation point temperature. The experimental layer growth pattern is compared with a model of mass transfer, in which interface mass balance is considered. In the model the authors have considered the formation of one and two compact nitride layers. For short time of treatment, it is shown that a parabolic profile does not satisfactorily describe the layer growth.

  2. Two-photon absorption laser induced fluorescence on O and O{sub 3} in a dc plasma for oxidation of aluminum

    SciTech Connect

    Knechten, K.; Kniknie, B.J.; Engeln, R.; Swagten, H.J.M.; Koopmans, B.; Sanden, M.C.M. van de; Jonge, W.J.M. de

    2004-11-01

    It has been conjectured that atomic oxygen and ozone can have a great influence on the plasma oxidation of ultrathin aluminum for magnetic tunnel junctions. In order to measure the density of O and ozone, two-photon absorption laser induced fluorescence measurements are performed in the dc glow plasma that is used for the oxidation process. It was found that ozone is much more abundantly present compared to atomic oxygen. Using in situ, real-time ellipsometry measurements, we prove that ozone is not directly involved in the oxidation process.

  3. Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H{sub 2} + 95% N{sub 2}) plasma

    SciTech Connect

    Muneshwar, Triratna Cadien, Ken

    2015-05-15

    Zirconium nitride (ZrN) has the lowest bulk electrical resistivity and high thermal stability among group IV and V transition metal nitrides, which makes it a promising material for ULSI applications such as a diffusion barrier for Cu interconnects, contact metal in III-V semiconductor devices, and in high density memory structures. Plasma enhanced atomic layer deposition (PEALD) of conducting ZrN thin films using Zr[N(CH{sub 3}){sub 2}]{sub 4} and forming gas (5% H{sub 2} + 95% N{sub 2}) plasma is reported in this article. The growth per cycle (GPC) for every deposition was determined from analysis of dynamic in-situ spectroscopic ellipsometry (d-iSE) measurements. An experimental design is proposed for faster determination of ALD growth saturation curves. At substrate temperature of 150 °C, a GPC of 0.10 nm/cycle was observed for self-limiting ZrN PEALD growth. The electrical resistivity of ZrN films deposited on SiO{sub 2} substrate was found to be 559.5 ± 18.5 μΩ cm with negligible change in resistivity even after ∼1000 h exposure to air. The metallic behavior of our ZrN films was evident from the free electron dispersion component in dielectric response, the broad band of photoelectron emission across Fermi level and the positive temperature coefficient for resistivity of 0.0088/ °C.

  4. Synthesis of Cubic Boron Nitride Nanoparticles from Boron Oxide, Melamine and NH3 by Non-Transferred Ar-N2 Thermal Plasma.

    PubMed

    Ko, Eun Ha; Kim, Tae-Hee; Choi, Sooseok; Park, Dong-Wha

    2015-11-01

    Cubic boron nitride (c-BN) which is has extremely high hardness and thermal conductivity comparable to the diamond was synthesized in nanoparticle form by using non-transferred thermal plasma. The input power of arc plasma was fixed at 13.5 kW and the operating pressure was also fixed at atmospheric pressure. Boron oxide (B2O3) and melamine (C3H6N6) were used as raw materials for the sources of boron and nitrogen. Ammonia gas (NH3) was additionally injected to plasma jet as reactive gas providing additional nitrogen. Decomposed B2O3 and C3H6N6 enhance reactivity for synthesizing c-BN with exothermic reactions between carbon, hydrogen and oxygen. Products were collected from the inner wall of reactor. In X-ray diffraction and scanning electron microscope measurements, the collected powder was confirmed as c-BN nanoparticles which have crystalline size smaller than 150 nm. PMID:26726544

  5. Multifunctional bulk plasma source based on discharge with electron injection

    SciTech Connect

    Klimov, A. S.; Medovnik, A. V.; Tyunkov, A. V.; Savkin, K. P.; Shandrikov, M. V.; Vizir, A. V.

    2013-01-15

    A bulk plasma source, based on a high-current dc glow discharge with electron injection, is described. Electron injection and some special design features of the plasma arc emitter provide a plasma source with very long periods between maintenance down-times and a long overall lifetime. The source uses a sectioned sputter-electrode array with six individual sputter targets, each of which can be independently biased. This discharge assembly configuration provides multifunctional operation, including plasma generation from different gases (argon, nitrogen, oxygen, acetylene) and deposition of composite metal nitride and oxide coatings.

  6. Functionalized boron nitride nanotubes

    DOEpatents

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  7. Synthesis of AlN/Al Polycrystals along with Al Nanoparticles Using Thermal Plasma Route

    SciTech Connect

    Kanhe, Nilesh S.; Nawale, A. B.; Kulkarni, N. V.; Bhoraskar, S. V.; Mathe, V. L.; Das, A. K.

    2011-07-15

    This paper for the first time reports the (200) oriented growth of hexagonal Aluminum nitride crystals during synthesis of aluminum nanoparticles in dc transferred arc thermal plasma reactor by gas phase condensation in nitrogen plasma. The structural and morphological study of as synthesized AlN crystal and aluminium nanoparticles was done by using the x-ray diffraction method, scanning electron microscopy and transmission electron microscopy.

  8. Microstructural characterization of Ti-6Al-4V alloy subjected to the duplex SMAT/plasma nitriding.

    PubMed

    Pi, Y; Faure, J; Agoda-Tandjawa, G; Andreazza, C; Potiron, S; Levesque, A; Demangel, C; Retraint, D; Benhayoune, H

    2013-09-01

    In this study, microstructural characterization of Ti-6Al-4V alloy, subjected to the duplex surface mechanical attrition treatment (SMAT)/nitriding treatment, leading to improve its mechanical properties, was carried out through novel and original samples preparation methods. Instead of acid etching which is limited for morphological characterization by scanning electron microscopy (SEM), an original ion polishing method was developed. Moreover, for structural characterization by transmission electron microscopy (TEM), an ion milling method based with the use of two ions guns was also carried out for cross-section preparation. To demonstrate the efficiency of the two developed methods, morphological investigations were done by traditional SEM and field emission gun SEM. This was followed by structural investigations through selected area electron diffraction (SAED) coupled with TEM and X-ray diffraction techniques. The results demonstrated that ionic polishing allowed to reveal a variation of the microstructure according to the surface treatment that could not be observed by acid etching preparation. TEM associated to SAED and X-ray diffraction provided information regarding the nanostructure compositional changes induced by the duplex SMAT/nitriding process. PMID:23766242

  9. Determination of ionization fraction and plasma potential in a dc magnetron sputtering system using a quartz crystal microbalance and a gridded energy analyzer

    SciTech Connect

    Green, K.M.

    1997-01-01

    A diagnostic which combines a quartz crystal microbalance and a gridded energy analyzer has been developed to measure the ion-to- neutral ratio and the plasma potential in a commercial dc magnetron sputtering device. Additional features of this sensor include an externally controlled shutter which protects the diagnostic when it is in the chamber, but it is not in use. The diagnostic is mounted on a linear motion feedthrough and embedded in a slot in the wafer chuck to allow for measuring uniformity in deposition and ionization throughout the plane of the wafer. RF power is introduced to ionize the Al particles. Using the quartz crystal microbalance and the gridded energy analyzer, the ion-to-neutral ratio and other parameters are determined. Comparing the total deposition rate with and without a bias that screens out the ions, but leaves the plasma undisturbed, allows for the determination of the ion-to-neutral ratio. By varying the voltage applied to the grids, the plasma potential is measured. For example, a magnetron configuration having a pressure of 35 mtorr, a dc power of 2 kW, and a net rf power of 310{+-}5 W yielded 78{+-}5% ionization and a plasma potential of 35{+-}1 V.

  10. Persistent Longitudinal Variations of Plasma Density and DC Electric Fields in the Low Latitude Ionosphere Observed with Probes on the C/NOFS Satellite

    NASA Astrophysics Data System (ADS)

    Pfaff, R. F.; Freudenreich, H.; Klenzing, J. H.; Rowland, D. E.; Liebrecht, M. C.; Bromund, K. R.; Roddy, P. A.

    2010-12-01

    Continuous measurements using in situ probes on consecutive orbits of the C/NOFS satellite reveal that the plasma density is persistently organized by longitude, in both day and night conditions and at all locations within the satellite orbit, defined by its perigee and apogee of 401 km and 867 km, respectively, and its inclination of 13 degrees. Typical variations are a factor of 2 or 3 compared to mean values. Furthermore, simultaneous observations of DC electric fields and their associated E x B drifts in the low latitude ionosphere also reveal that their amplitudes are also strongly organized by longitude in a similar fashion. The drift variations with longitude are particularly pronounced in the meridional component perpendicular to the magnetic field although they are also present in the zonal component as well. The longitudes of the peak meridional drift and density values are significantly out of phase with respect to each other. Time constants for the plasma accumulation at higher altitudes with respect to the vertical drift velocity must be taken into account in order to properly interpret the detailed comparisons of the phase relationship of the plasma density and plasma velocity variations. Although for a given period corresponding to that of several days, typically one longitude region dominates the structuring of the plasma density and plasma drift data, there is also evidence for variations organized about multiple longitudes at the same time. Statistical averages will be shown that suggest a tidal “wave 4” structuring is present in both the plasma drift and plasma density data. We interpret the apparent association of the modulation of the E x B drifts with longitude as well as that of the ambient plasma density as a manifestation of tidal forces at work in the low latitude upper atmosphere. The observations demonstrate how the high duty cycle of the C/NOFS observations and its unique orbit expose fundamental processes at work in the low

  11. Persistent Longitudinal Variations of Plasma Density and DC Electric Fields in the Low Latitude Ionosphere Observed with Probes on the C/NOFS Satellite

    NASA Technical Reports Server (NTRS)

    Pfaff, R.; Freudenreich, H.; Klenzing, J.; Rowland, D.; Liebrecht, C.; Bromund, K.; Roddy, P.

    2010-01-01

    Continuous measurements using in situ probes on consecutive orbits of the C/N0FS satellite reveal that the plasma density is persistently organized by longitude, in both day and night conditions and at all locations within the satellite orbit, defined by its perigee and apogee of 401 km and 867 km, respectively, and its inclination of 13 degrees. Typical variations are a factor of 2 or 3 compared to mean values. Furthermore, simultaneous observations of DC electric fields and their associated E x B drifts in the low latitude ionosphere also reveal that their amplitudes are also strongly organized by longitude in a similar fashion. The drift variations with longitude are particularly pronounced in the meridional component perpendicular to the magnetic field although they are also present in the zonal component as well. The longitudes of the peak meridional drift and density values are significantly out of phase with respect to each other. Time constants for the plasma accumulation at higher altitudes with respect to the vertical drift velocity must be taken into account in order to properly interpret the detailed comparisons of the phase relationship of the plasma density and plasma velocity variations. Although for a given period corresponding to that of several days, typically one longitude region dominates the structuring of the plasma density and plasma drift data, there is also evidence for variations organized about multiple longitudes at the same time. Statistical averages will be shown that suggest a tidal "wave 4" structuring is present in both the plasma drift and plasma density data. We interpret the apparent association of the modulation of the E x B drifts with longitude as well as that of the ambient plasma density as a manifestation of tidal forces at work in the low latitude upper atmosphere. The observations demonstrate how the high duty cycle of the C/NOFS observations and its unique orbit expose fundamental processes at work in the low latitude

  12. Preparation of silicon carbide SiC-based nanopowders by the aerosol-assisted synthesis and the DC thermal plasma synthesis methods

    SciTech Connect

    Czosnek, Cezary; Bućko, Mirosław M.; Janik, Jerzy F.; Olejniczak, Zbigniew; Bystrzejewski, Michał; Łabędź, Olga; Huczko, Andrzej

    2015-03-15

    Highlights: • Make-up of the SiC-based nanopowders is a function of the C:Si:O ratio in precursor. • Two-stage aerosol-assisted synthesis offers conditions close to equilibrium. • DC thermal plasma synthesis yields kinetically controlled SiC products. - Abstract: Nanosized SiC-based powders were prepared from selected liquid-phase organosilicon precursors by the aerosol-assisted synthesis, the DC thermal plasma synthesis, and a combination of the two methods. The two-stage aerosol-assisted synthesis method provides at the end conditions close to thermodynamic equilibrium. The single-stage thermal plasma method is characterized by short particle residence times in the reaction zone, which can lead to kinetically controlled products. The by-products and final nanopowders were characterized by powder XRD, infrared spectroscopy FT-IR, scanning electron microscopy SEM, and {sup 29}Si MAS NMR spectroscopy. BET specific surface areas of the products were determined by standard physical adsorption of nitrogen at 77 K. The major component in all synthesis routes was found to be cubic silicon carbide β-SiC with average crystallite sizes ranging from a few to tens of nanometers. In some cases, it was accompanied by free carbon, elemental silicon or silica nanoparticles. The final mesoporous β-SiC-based nanopowders have a potential as affordable catalyst supports.

  13. Experimental investigation of dielectric barrier discharge plasma actuators driven by repetitive high-voltage nanosecond pulses with dc or low frequency sinusoidal bias

    NASA Astrophysics Data System (ADS)

    Opaits, Dmitry F.; Likhanskii, Alexandre V.; Neretti, Gabriele; Zaidi, Sohail; Shneider, Mikhail N.; Miles, Richard B.; Macheret, Sergey O.

    2008-08-01

    Experimental studies were conducted of a flow induced in an initially quiescent room air by a single asymmetric dielectric barrier discharge driven by voltage waveforms consisting of repetitive nanosecond high-voltage pulses superimposed on dc or alternating sinusoidal or square-wave bias voltage. To characterize the pulses and to optimize their matching to the plasma, a numerical code for short pulse calculations with an arbitrary impedance load was developed. A new approach for nonintrusive diagnostics of plasma actuator induced flows in quiescent gas was proposed, consisting of three elements coupled together: the schlieren technique, burst mode of plasma actuator operation, and two-dimensional numerical fluid modeling. The force and heating rate calculated by a plasma model was used as an input to two-dimensional viscous flow solver to predict the time-dependent dielectric barrier discharge induced flow field. This approach allowed us to restore the entire two-dimensional unsteady plasma induced flow pattern as well as characteristics of the plasma induced force. Both the experiments and computations showed the same vortex flow structures induced by the actuator. Parametric studies of the vortices at different bias voltages, pulse polarities, peak pulse voltages, and pulse repetition rates were conducted experimentally. The significance of charge buildup on the dielectric surface was demonstrated. The charge buildup decreases the effective electric field in the plasma and reduces the plasma actuator performance. The accumulated surface charge can be removed by switching the bias polarity, which leads to a newly proposed voltage waveform consisting of high-voltage nanosecond repetitive pulses superimposed on a high-voltage low frequency sinusoidal voltage. Advantages of the new voltage waveform were demonstrated experimentally.

  14. Study of Non-Thermal DC Arc Plasma of CH4/Ar at Atmospheric Pressure Using Optical Emission Spectroscopy and Mass Spectrometry

    NASA Astrophysics Data System (ADS)

    Liao, Mengran; Wang, Yu; Wu, Hanfeng; Li, Hui; Xia, Weidong

    2015-09-01

    Non-thermal C/H/Ar plasmas are widely applied to carbonaceous material production and processing. In this work, plasma parameters and gaseous species of the atmospheric non-thermal C/H/Ar plasmas produced by an atmospheric-pressure DC arc discharge generator in CH4/Ar were investigated. The voltage-current characteristics were measured for different CH4/Ar ratios. Optical emission spectroscopy was employed to analyze the electron excitation temperature, gas temperature and electron density under various discharge conditions. The hydrocarbon molecules produced in the CH4/Ar plasmas were detected with photoionization mass spectrometry. The optical spectral results demonstrated that the electron excitation temperature was 0.4-1 eV, the gas temperature was 2800-4200 K and the electron density was in the range of (5-20)×1015 cm-3. The mass spectrum indicated that a variety of unsaturated hydrocarbons (C2H4, C3H6, C6H6, etc.) and several highly unsaturated hydrocarbons (C4H2, C5H6, etc.) were produced in the non-thermal arc plasmas. supported by National Natural Science Foundation of China (Nos. 11035005, 11475174, 50876101) and USTC-NSRL Association Funding (No. KY2090130001)

  15. Cytocompatibility of amorphous hydrogenated carbon nitride films deposited by CH4/N2 dielectric barrier discharge plasmas with respect to cell lines

    NASA Astrophysics Data System (ADS)

    Majumdar, Abhijit; Schröder, Karsten; Hippler, Rainer

    2008-10-01

    Special amorphous hydrogenated carbon nitride (a-H-CNx) films have been prepared on glass substrates for the investigation of adhesion and proliferation of different mammalian cell lines. CH4/N2 dielectric barrier discharge plasmas were applied to deposit a-H-CNx coatings at half of the atmospheric pressure. Film quality was modified by varying the CH4:N2 ratio and deposition duration. Chemical composition was determined by x-ray photoelectron spectroscopy and Fourier transformed infrared spectroscopy. The N/C ratio was in the range of 0.20-0.55. A very small surface roughness was verified by atomic force microscopy. Human embryonic kidney (HEK) and rat adrenal pheochromocytoma (PC12) cells were cultivated on the a-H-CNx films to investigate the cytocompatibility of these surfaces. The microscopic images show that both kinds of cells lines were unable to survive. The cells did not adhere to the surfaces, and most of the cells died after certain time spans. Increased amounts of nitrogen in the film induce an accelerated cell death. It is concluded, that the deposited CNx film behaves cytotoxic to HEK and PC12 cell lines.

  16. Cancer cells (MCF-7, Colo-357, and LNCaP) viability on amorphous hydrogenated carbon nitride film deposited by dielectric barrier discharge plasma

    NASA Astrophysics Data System (ADS)

    Majumdar, Abhijit; Ummanni, Ramesh; Schröder, Karsten; Walther, Reinhard; Hippler, Rainer

    2009-08-01

    Atmospheric pressure dielectric barrier discharge plasma in CH4/N2 (1:1) gas mixture has been employed to deposit amorphous hydrogenated carbon nitride (aH-CNx) film. In vitro studies with three different cancer cell lines were carried out on the coated surfaces. Preliminary biocompatibility and effect of CH4/N2 films have been investigated by measuring cell proliferation. Three different cancer cell (MCF-7, Colo-357, and LNCaP) suspensions have been exposed on the surface of aH-CNx film to investigate the effect of deposited films on viability of cells. Results from the MTS (3-(4,5-dimethylthiazol-2-yl)-5-(3-carboxymethoxyphenyl)-2-(4-sulfophenyl)-2H- tetrazolium, inner salt) proliferation assays indicated that the deposited aH-CNx film is cytotoxic to cancer cell lines. Time course cell viability assay indicated maximum cell death at 24 h after seeding the cells. This effect is dependant on physicochemical and mechanical properties of the deposited films. The deposited film has been characterized by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The results confirm the presence of C-N, C≡N, C-Hx, C-O, N-O, overlapping NH, and OH bonds in the film.

  17. Plasma assisted surface coating/modification processes - An emerging technology

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1987-01-01

    A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation. These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

  18. Plasma assisted surface coating/modification processes: An emerging technology

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1986-01-01

    A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation). These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

  19. PECVD silicon-rich nitride and low stress nitride films mechanical characterization using membrane point load deflection

    NASA Astrophysics Data System (ADS)

    Bagolini, Alvise; Picciotto, Antonino; Crivellari, Michele; Conci, Paolo; Bellutti, Pierluigi

    2016-02-01

    An analysis of the mechanical properties of plasma enhanced chemical vapor (PECVD) silicon nitrides is presented, using micro fabricated silicon nitride membranes under point load deflection. The membranes are made of PECVD silicon-rich nitride and low stress nitride films. The mechanical performance of the bended membranes is examined both with analytical models and finite element simulation in order to extract the elastic modulus and residual stress values. The elastic modulus of low stress silicon nitride is calculated using stress free analytical models, while for silicon-rich silicon nitride and annealed low stress silicon nitride it is estimated with a pre-stressed model of point-load deflection. The effect of annealing both in nitrogen and hydrogen atmosphere is evaluated in terms of residual stress, refractive index and thickness variation. It is demonstrated that a hydrogen rich annealing atmosphere induces very little change in low stress silicon nitride. Nitrogen annealing effects are measured and shown to be much higher in silicon-rich nitride than in low stress silicon nitride. An estimate of PECVD silicon-rich nitride elastic modulus is obtained in the range between 240-320 GPa for deposited samples and 390 GPa for samples annealed in nitrogen atmosphere. PECVD low stress silicon nitride elastic modulus is estimated to be 88 GPa as deposited and 320 GPa after nitrogen annealing.

  20. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, Theodore D.; Misra, Mira

    1997-01-01

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

  1. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, T.D.; Misra, M.

    1997-10-14

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.

  2. Analytical and experimental studies for thermal plasma processing of materials

    NASA Astrophysics Data System (ADS)

    Work continued on thermal plasma processing of materials. This quarter, ceramic powders of carbides, aluminum nitride, oxides, solids solutions, magnetic and non magnetic spinels, superconductors, and composites have been successfully synthesized in a Triple DC Torch Plasma Jet Reactor (TTPR) and in a single DC Plasma Jet Reactor. All the ceramic powders with the exception of AIN were synthesized using a novel injection method developed to overcome the problems associated with solid injection, in particular for the single DC plasma jet reactor, and to realize the benefits of gas phase reactions. Also, initial experiments have been performed for the deposition of diamond coatings on Si wafers using the TTPR with methane as the carbon source. Well faceted diamond crystallites were deposited on the surface of the wafers, forming a continuous one particle thick coating. For measuring temperature and velocity fields in plasma systems, enthalpy probes have been developed and tested. The validity has been checked by performing energy and mass flux balances in an argon plasma jet operated in argon atmosphere. Total Gibbs free energy minimization calculations using a quasi-equilibrium modification have been applied to simulate several chemical reactions. Plasma reactor modelling has been performed for the counter-flow liquid injection plasma synthesis experiment. Plasma diagnostics has been initiated to determine the pressure gradient in the coalesced part of the plasma jet. The pressure gradient drives the diffusion of chemical species which ultimately controls the chemical reactions.

  3. The deposition of titanium dioxide nanoparticles by means of a hollow cathode plasma jet in dc regime

    NASA Astrophysics Data System (ADS)

    Perekrestov, R.; Kudrna, P.; Tichý, M.

    2015-06-01

    TiO2 nanoparticles are being investigated in this work. Nanoparticles were obtained in Ar plasma on monocrystaline Si(111) substrate by means of a gas-phase deposition using a low pressure hollow cathode plasma jet. The material of the cathode is pure titanium. Oxygen was introduced separately from argon through an inlet in the chamber. The nanoparticle growth mechanism is qualitatively discussed. The morphology of the surfaces of thin films was investigated by an atomic force microscope. The chemical composition of the thin films was investigated by means of an energy-dispersive x-ray analysis and x-ray photoelectron spectroscopy. A cylindrical Langmuir probe and a fiber optic thermometer was used for measurements of plasma parameters and neutral gas temperature respectively. The relationship between plasma parameters and the films’ morphology is particularly explained.

  4. Plasma-Enhanced Atomic Layer Deposition of Ruthenium-Titanium Nitride Mixed-Phase Layers for Direct-Plate Liner and Copper Diffusion Barrier Applications

    NASA Astrophysics Data System (ADS)

    Gildea, Adam James

    Current interconnect networks in semiconductor processing utilize a sputtered TaN diffusion barrier, Ta liner, and Cu seed to improve the adhesion, microstructure, and electromigration resistance of electrochemically deposited copper that fills interconnect wires and vias. However, as wire/via widths shrink due to device scaling, it becomes increasingly difficult to have the volume of a wire/via be occupied with ECD Cu which increases line resistance and increases the delay in signal propagation in IC chips. A single layer that could serve the purpose of a Cu diffusion barrier and ECD Cu adhesion promoter could allow ECD Cu to occupy a larger volume of a wire/via, leading to a decrease in line resistance and decrease in signal delay. Previous work has shown RuTaN, RuWCN, and RuCo films can act as Cu diffusion barriers and be directly platable to thickness of 2-3nm. However, other material selections may prove as effective or possibly better. Mixed-phase films of ruthenium titanium nitride grown by atomic layer deposition (ALD) were investigated for their performance as a Cu diffusion barrier and as a surface for the direct plating of ECD Cu. All Ru was deposited by plasma-enhanced atomic layer deposition (PEALD) while TiN was deposited by either thermal ALD or PEALD. RuTiN, films with thermal ALD TiN and a Ru:Ti of 20:1 showed barrier performance comparable to PVD TaN at 3-4 nm thickness and 15 nm planar films were directly platable. Follow up work is certainly needed for this material set, yet initial results indicate RuTiN could serve as an effective direct plate liner for Cu interconnects.

  5. Preparation of Carbon-Doped TiO2 Nanopowder Synthesized by Droplet Injection of Solution Precursor in a DC-RF Hybrid Plasma Flow System

    NASA Astrophysics Data System (ADS)

    Jang, Juyong; Takana, Hidemasa; Ando, Yasutaka; Solonenko, Oleg P.; Nishiyama, Hideya

    2013-08-01

    Carbon-doped titanium dioxide nanopowder has received much attention because of its higher photocatalytic performance, which is practically activated not only by UV, but also by visible light irradiation. In the present study, C-TiO2 nanopowder was synthesized by droplet injection of solution precursor in a DC-RF hybrid plasma flow system, resulting in higher photocatalytic performance even under visible light irradiation. In-flight C-TiO2 nanoparticles reacted with the high concentration of carbon in plasma flow and were then deposited on the surfaces of two quartz tubes in the upstream and downstream regions of this system. The collected C-TiO2 nanopowder contained anatase-rutile mixed-phase TiO2 and TiC, the contents of which depended on the location of the powder collection, the temperature, and the duration of plasma treatment. Highly functional C-TiO2 nanopowder collected in the downstream region exhibited a higher degradation rate of methylene blue than that of single-phase anatase TiO2, even under visible light irradiation, in spite of being TiC.

  6. Nitriding of titanium by NH{sub 3} RF plasma: a study of the corrosion resistance and the mechanical properties of the protective films formed at the solid surface

    SciTech Connect

    Bellakhal, N

    2002-12-01

    The exposure of a titanium sample to an NH{sub 3} low pressure plasma leads to the formation of a nitriding layer. The products formed at the titanium surface were identified by XRD spectroscopy. The modification of the corrosion resistance characteristics of titanium due to the NH{sub 3} plasma treatment were investigated by electrochemical tests. The recorded polarization curves of the treated titanium samples were used to determine the values of the corrosion potential E{sub corr}. This study confirms the increasing of the corrosion resistance as a function of the time exposure and the injected electric power in the silica reactor. The plasma treatment also induces drastic changes of the titanium target in hardness.

  7. Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride

    NASA Astrophysics Data System (ADS)

    Yang, Jialing; Eller, Brianna S.; Zhu, Chiyu; England, Chris; Nemanich, Robert J.

    2012-09-01

    Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H2/N2 plasma at 650 °C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 °C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 °C. The valence band and conduction band offsets (VBOs and CBOs) of the Al2O3/GaN and HfO2/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al2O3 layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO2/IPL/GaN structures. The VBOs were ˜0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO2 with respect to Al2O3 and GaN, respectively.

  8. Numerical study of the effect of water content on OH production in a pulsed-dc atmospheric pressure helium-air plasma jet

    NASA Astrophysics Data System (ADS)

    Mu-Yang, Qian; Cong-Ying, Yang; Zhen-dong, Wang; Xiao-Chang, Chen; San-Qiu, Liu; De-Zhen, Wang

    2016-01-01

    A numerical study of the effect of water content on OH production in a pulsed-dc atmospheric pressure helium-air plasma jet is presented. The generation and loss mechanisms of the OH radicals in a positive half-cycle of the applied voltage are studied and discussed. It is found that the peak OH density increases with water content in air (varying from 0% to 1%) and reaches 6.3×1018 m-3 when the water content is 1%. Besides, as the water content increases from 0.01% to 1%, the space-averaged reaction rate of three-body recombination increases dramatically and is comparable to those of main OH generation reactions. Project supported by the National Natural Science Foundation of China (Grant No. 11465013), the Natural Science Foundation of Jiangxi Province, China (Grant No. 20151BAB212012), and the International Science and Technology Cooperation Program of China (Grant No. 2015DFA61800).

  9. Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics

    NASA Astrophysics Data System (ADS)

    Sato, Masaru; Takeyama, Mayumi B.; Nakata, Yoshihiro; Kobayashi, Yasushi; Nakamura, Tomoji; Noya, Atsushi

    2016-04-01

    The characteristics of SiN x films deposited by reactive sputtering and plasma-enhanced chemical vapor deposition (PECVD) are examined to obtain high-density films at low deposition temperatures. PECVD SiN x films deposited at 200 °C show low densities of 2.14-2.20 g/cm3 regardless of their composition, while their refractive index varies depending on their composition. PECVD requires the substrate temperature to obtain high-density films, because a possible cause of low-density films is the amount of Si-H bond, rather than that of N-H bond, in the films originating from hydrogen incorporated by the insufficient decomposition of SiH4 molecules at low temperatures. The sputtered SiN x films with high density are obtained at a temperature lower than 200 °C and considered a promising candidate for insulating films at low process temperatures.

  10. Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

    SciTech Connect

    Kuboi, Nobuyuki Tatsumi, Tetsuya; Kinoshita, Takashi; Shigetoshi, Takushi; Fukasawa, Masanaga; Komachi, Jun; Ansai, Hisahiro

    2015-11-15

    The authors modeled SiN film etching with hydrofluorocarbon (CH{sub x}F{sub y}/Ar/O{sub 2}) plasma considering physical (ion bombardment) and chemical reactions in detail, including the reactivity of radicals (C, F, O, N, and H), the area ratio of Si dangling bonds, the outflux of N and H, the dependence of the H/N ratio on the polymer layer, and generation of by-products (HCN, C{sub 2}N{sub 2}, NH, HF, OH, and CH, in addition to CO, CF{sub 2}, SiF{sub 2}, and SiF{sub 4}) as ion assistance process parameters for the first time. The model was consistent with the measured C-F polymer layer thickness, etch rate, and selectivity dependence on process variation for SiN, SiO{sub 2}, and Si film etching. To analyze the three-dimensional (3D) damage distribution affected by the etched profile, the authors developed an advanced 3D voxel model that can predict the time-evolution of the etched profile and damage distribution. The model includes some new concepts for gas transportation in the pattern using a fluid model and the property of voxels called “smart voxels,” which contain details of the history of the etching situation. Using this 3D model, the authors demonstrated metal–oxide–semiconductor field-effect transistor SiN side-wall etching that consisted of the main-etch step with CF{sub 4}/Ar/O{sub 2} plasma and an over-etch step with CH{sub 3}F/Ar/O{sub 2} plasma under the assumption of a realistic process and pattern size. A large amount of Si damage induced by irradiated hydrogen occurred in the source/drain region, a Si recess depth of 5 nm was generated, and the dislocated Si was distributed in a 10 nm deeper region than the Si recess, which was consistent with experimental data for a capacitively coupled plasma. An especially large amount of Si damage was also found at the bottom edge region of the metal–oxide–semiconductor field-effect transistors. Furthermore, our simulation results for bulk fin-type field-effect transistor side-wall etching

  11. The use of ion chromatography-dc plasma atomic emission spectrometry for the speciation of trace metals. Annual performance report, February 1, 1989--January 31, 1992

    SciTech Connect

    Urasa, I.T.

    1991-09-20

    The original objects of this research program were: to interface d.c. plasma atomic emission spectrometer with an ion chromatograph; to characterize and optimize the combined systems for application in the speciation of metals in aqueous solutions; to use this system in the study of the solution chemistry of various metals; and to find ways in which the measurement sensitivity of the method can be enhanced, thereby allowing the detection of metal species at low ppb concentration levels. This approach has been used to study the chemistry of and speciate several elements in solution including: arsenic, chromium, iron, manganese, nickel phosphorus, platinum, selenium, and vanadium. During the course of this research, we have found that the solution chemistry of the elements studied and the speciation data obtained can vary considerably depending on the solution, and the chromatographic conditions employed. The speciation of chromium, iron, and vanadium was found to be highly influenced by the acidity of the sample. The element selective nature of the d.c. plasma detector allows these changes to be monitored, thereby providing quantitative information on the new moieties formed. New approaches are being developed including the use of chelating ligands as preconcentration agents for purposes of reducing further the detection limits of the elements of interest and to improve the overall element speciation scheme. New thrusts are being directed towards the employment of post-column derivatization method coupled with colorimetric measurements to detect and quantify metal species eluting from the chromatographic column. The influence of sample acidity on these investigations will be carefully evaluated. These new thrusts are described in the accompanying Project Renewal Proposal.

  12. Effect of N{sub 2} and Ar gas on DC arc plasma generation and film composition from Ti-Al compound cathodes

    SciTech Connect

    Zhirkov, Igor Rosen, Johanna; Oks, Efim

    2015-06-07

    DC arc plasma from Ti, Al, and Ti{sub 1−x}Al{sub x} (x = 0.16, 0.25, 0.50, and 0.70) compound cathodes has been characterized with respect to plasma chemistry (charged particles) and charge-state-resolved ion energy for Ar and N{sub 2} pressures in the range 10{sup −6} to 3 × 10{sup −2} Torr. Scanning electron microscopy was used for exploring the correlation between the cathode and film composition, which in turn was correlated with the plasma properties. In an Ar atmosphere, the plasma ion composition showed a reduction of Al of approximately 5 at. % compared to the cathode composition, while deposited films were in accordance with the cathode stoichiometry. Introducing N{sub 2} above ∼5 × 10{sup −3} Torr, lead to a reduced Al content in the plasma as well as in the film, and hence a 1:1 correlation between the cathode and film composition cannot be expected in a reactive environment. This may be explained by an influence of the reactive gas on the arc mode and type of erosion of Ti and Al rich contaminations, as well as on the plasma transport. Throughout the investigated pressure range, a higher deposition rate was obtained from cathodes with higher Al content. The origin of generated gas ions was investigated through the velocity rule, stating that the most likely ion velocities of all cathode elements from a compound cathode are equal. The results suggest that the major part of the gas ions in Ar is generated from electron impact ionization, while gas ions in a N{sub 2} atmosphere primarily originate from a nitrogen contaminated layer on the cathode surface. The presented results provide a contribution to the understanding processes of plasma generation from compound cathodes. It also allows for a more reasonable approach to the selection of composite cathode and experimental conditions for thin film depositions.

  13. High pressure nitriding

    SciTech Connect

    Jung, M.; Hoffmann, F.T.; Mayr, P.; Minarski, P.

    1995-12-31

    The aim of the presented research project is the development of a new high pressure nitriding process, which avoids disadvantages of conventional nitriding processes and allows for new applications. Up to now, a nitriding furnace has been constructed and several investigations have been made in order to characterize the influence of pressure on the nitriding process. In this paper, connections between pressure in the range of 2 to 12 atm and the corresponding nitride layer formation for the steel grades AISI 1045, H11 and a nitriding steel are discussed. Results of the nitride layer formation are presented. For all steel grades, a growth of nitride layers with increasing pressure was obtained. Steels with passive layers, as the warm working steel H11, showed a better nitriding behavior at elevated pressure.

  14. Milliwatt dc/dc Inverter

    NASA Technical Reports Server (NTRS)

    Mclyman, C. W.

    1983-01-01

    Compact dc/dc inverter uses single integrated-circuit package containing six inverter gates that generate and amplify 100-kHz square-wave switching signal. Square-wave switching inverts 10-volt local power to isolated voltage at another desired level. Relatively high operating frequency reduces size of filter capacitors required, resulting in small package unit.

  15. Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

    SciTech Connect

    Gacevic, Z.; Kehagias, Th.; Koukoula, T.; Komninou, Ph.

    2011-05-15

    We present a study of the optical properties of GaN/AlN and InGaN/GaN quantum dot (QD) superlattices grown via plasma-assisted molecular-beam epitaxy, as compared to their quantum well (QW) counterparts. The three-dimensional/two-dimensional nature of the structures has been verified using atomic force microscopy and transmission electron microscopy. The QD superlattices present higher internal quantum efficiency as compared to the respective QWs as a result of the three-dimensional carrier localization in the islands. In the QW samples, photoluminescence (PL) measurements point out a certain degree of carrier localization due to structural defects or thickness fluctuations, which is more pronounced in InGaN/GaN QWs due to alloy inhomogeneity. In the case of the QD stacks, carrier localization on potential fluctuations with a spatial extension smaller than the QD size is observed only for the InGaN QD-sample with the highest In content (peak emission around 2.76 eV). These results confirm the efficiency of the QD three-dimensional confinement in circumventing the potential fluctuations related to structural defects or alloy inhomogeneity. PL excitation measurements demonstrate efficient carrier transfer from the wetting layer to the QDs in the GaN/AlN system, even for low QD densities ({approx}10{sup 10} cm{sup -3}). In the case of InGaN/GaN QDs, transport losses in the GaN barriers cannot be discarded, but an upper limit to these losses of 15% is deduced from PL measurements as a function of the excitation wavelength.

  16. Effect of anomalous electron cross-field transport on electron energy distribution function in a DC-RF magnetized plasma discharge

    NASA Astrophysics Data System (ADS)

    Raitses, Yevgeny; Donnelly, Vincent; Kaganovich, Igor; Godyak, Valery

    2013-09-01

    The application of the magnetic field in a low pressure plasma can cause a spatial separation of cold and hot electron groups. This so-called magnetic filter effect is not well understood and is the subject of our studies. In this work, we investigate electron energy distribution function in a DC-RF plasma discharge with crossed electric and magnetic field operating at sub-mtorr pressure range of xenon gas. Experimental studies showed that the increase of the magnetic field leads to a more uniform profile of the electron temperature across the magnetic field. This surprising result indicates the importance of anomalous electron transport that causes mixing of hot and cold electrons. High-speed imaging and probe measurements revealed a coherent structure rotating in E cross B direction with frequency of a few kHz. Similar to spoke oscillations reported for Hall thrusters, this rotating structure conducts the largest fraction of the cross-field current. This work was supported by the US DOE under Contract DE-AC02-09CH11466.

  17. Effect of anomalous electron cross-field transport on electron energy distribution function in a DC-RF magnetized plasma discharge

    NASA Astrophysics Data System (ADS)

    Raitses, Yevgeny; Donnelly, Vincent M.; Kaganovich, Igor D.; Godyak, Valery

    2013-10-01

    The application of the magnetic field in a low pressure plasma can cause a spatial separation of cold and hot electron groups. This so-called magnetic filter effect is not well understood and is the subject of our studies. In this work, we investigate electron energy distribution function in a DC-RF plasma discharge with crossed electric and magnetic field operating at sub-mtorr pressure range of xenon gas. Experimental studies showed that the increase of the magnetic field leads to a more uniform profile of the electron temperature across the magnetic field. This surprising result indicates the importance of anomalous electron transport that causes mixing of hot and cold electrons. High-speed imaging and probe measurements revealed a coherent structure rotating in E cross B direction with frequency of a few kHz. Similar to spoke oscillations reported for Hall thrusters, this rotating structure conducts the largest fraction of the cross-field current. This work was supported by DOE contract DE-AC02-09CH11466.

  18. M3D-C1 simulations of plasma response in ELM-mitigated ASDEX Upgrade and DIII-D discharges

    NASA Astrophysics Data System (ADS)

    Lyons, B. C.; Ferraro, N. M.; Haskey, S. R.; Logan, N. C.

    2015-11-01

    The extended magnetohydrodynamics (MHD) code M3D-C1 is used to study the time-independent, linear response of tokamak equilibria to applied, 3D magnetic perturbations. In doing so, we seek to develop a more complete understanding of what MHD phenomena are responsible for the mitigation and suppression of edge-localized modes (ELMs) and to explain why the success of ELM suppression experiments differs both within a single tokamak and across different tokamaks. We consider such experiments on ASDEX Upgrade and DIII-D. We examine how resonant and non-resonant plasma responses are affected by varying the relative magnitude and phase of sets of magnetic coils. The importance of two-fluid effects, rotation profiles, plasma β, collisionality, bootstrap current profiles, and various numerical parameters are explored. The results are verified against other MHD codes (e.g., IPEC, MARS), correlated to observations of ELM mitigation or suppression, and validated against observed magnetic responses. Work supported in part by US DOE under DE-FC02-04ER54698, DE-AC02-09CH11466, and the FES Postdoctoral Research Program.

  19. 3D magnetohydrodynamic modelling of a dc low-current plasma arc batch reactor at very high pressure in helium

    NASA Astrophysics Data System (ADS)

    Lebouvier, A.; Iwarere, S. A.; Ramjugernath, D.; Fulcheri, L.

    2013-04-01

    This paper deals with a three-dimensional (3D) time-dependent magnetohydrodynamic (MHD) model under peculiar conditions of very high pressures (from 2 MPa up to 10 MPa) and low currents (<1 A). Studies on plasma arc working under these unusual conditions remain almost unexplored because of the technical and technological challenges to develop a reactor able to sustain a plasma at very high pressures. The combined effect of plasma reactivity and high pressure would probably open the way towards new promising applications in various fields: chemistry, lightning, materials or nanomaterial synthesis. A MHD model helps one to understand the complex and coupled phenomena surrounding the plasma which cannot be understood by simply experimentation. The model also provides data which are difficult to directly determine experimentally. The model simulates an experimental-based batch reactor working with helium. The particular reactor in question was used to investigate the Fischer-Tropsch application, fluorocarbon production and CO2 retro-conversion. However, as a first approach in terms of MHD, the model considers the case for helium as a non-reactive working gas. After a detailed presentation of the model, a reference case has been fully analysed (P = 8 MPa, I = 0.35 A) in terms of physical properties. The results show a bending of the arc and displacement of the anodic arc root towards the top of the reactor, due to the combined effects of convection, gravity and electromagnetic forces. A parametric study on the pressure (2-10 MPa) and current (0.25-0.4 A) was then investigated. The operating pressure does not show an influence on the contraction of the arc but higher pressures involve a higher natural convection in the reactor, driven by the density gradients between the cold and hot gas.

  20. Magnetoresistance measurements of superconducting molybdenum nitride thin films

    NASA Astrophysics Data System (ADS)

    Baskaran, R.; Arasu, A. V. Thanikai; Amaladass, E. P.

    2016-05-01

    Molybdenum nitride thin films have been deposited on aluminum nitride buffered glass substrates by reactive DC sputtering. GIXRD measurements indicate formation of nano-crystalline molybdenum nitride thin films. The transition temperature of MoN thin film is 7.52 K. The transition width is less than 0.1 K. The upper critical field Bc2(0), calculated using GLAG theory is 12.52 T. The transition width for 400 µA current increased initially upto 3 T and then decreased, while that for 100 µA current transition width did not decrease.

  1. Preparation of uranium nitride

    DOEpatents

    Potter, Ralph A.; Tennery, Victor J.

    1976-01-01

    A process for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride.

  2. Simplified dc to dc converter

    NASA Technical Reports Server (NTRS)

    Gruber, R. P. (Inventor)

    1984-01-01

    A dc to dc converter which can start with a shorted output and which regulates output voltage and current is described. Voltage controlled switches directed current through the primary of a transformer the secondary of which includes virtual reactance. The switching frequency of the switches is appropriately varied to increase the voltage drop across the virtual reactance in the secondary winding to which there is connected a low impedance load. A starting circuit suitable for voltage switching devices is provided.

  3. Silver nanoparticles as a key feature of a plasma polymer composite layer in mitigation of charge injection into polyethylene under dc stress

    NASA Astrophysics Data System (ADS)

    Milliere, L.; Maskasheva, K.; Laurent, C.; Despax, B.; Boudou, L.; Teyssedre, G.

    2016-01-01

    The aim of this work is to limit charge injection from a semi-conducting electrode into low density polyethylene (LDPE) under dc field by tailoring the polymer surface using a silver nanoparticles-containing layer. The layer is composed of a plane of silver nanoparticles embedded in a semi-insulating organosilicon matrix deposited on the polyethylene surface by a plasma process. Size, density and surface coverage of the nanoparticles are controlled through the plasma process. Space charge distribution in 300 μm thick LDPE samples is measured by the pulsed-electroacoustic technique following a short term (step-wise voltage increase up to 50 kV mm-1, 20 min in duration each, followed by a polarity inversion) and a longer term (up to 12 h under 40 kV mm-1) protocols for voltage application. A comparative study of space charge distribution between a reference polyethylene sample and the tailored samples is presented. It is shown that the barrier effect depends on the size distribution and the surface area covered by the nanoparticles: 15 nm (average size) silver nanoparticles with a high surface density but still not percolating form an efficient barrier layer that suppress charge injection. It is worthy to note that charge injection is detected for samples tailored with (i) percolating nanoparticles embedded in organosilicon layer; (ii) with organosilicon layer only, without nanoparticles and (iii) with smaller size silver particles (<10 nm) embedded in organosilicon layer. The amount of injected charges in the tailored samples increases gradually in the samples ranking given above. The mechanism of charge injection mitigation is discussed on the basis of complementary experiments carried out on the nanocomposite layer such as surface potential measurements. The ability of silver clusters to stabilize electrical charges close to the electrode thereby counterbalancing the applied field appears to be a key factor in explaining the charge injection

  4. Optical Absorption Measurements of Sputtered Ti Ion Density and Discussion of Ionization Mechanisms in Inductively Coupled Plasma-Assisted DC Sputtering

    NASA Astrophysics Data System (ADS)

    Okimura, Kunio; Nakamura, Tadashi; Mori, Hisashi

    This study discusses the ionization mechanisms of sputtered titanium (Ti) in inductively coupled plasma (ICP)-assisted dc magnetron sputtering based on measurements and model analyses. Ionic and atomic densities of sputtered titanium were measured using an optical absorption method under an Ar pressure of 3.5 Pa against rf(13.56MHz) power applied to the inserted coil. A Langmuir probe provided measurements of electron densities against coil rf power, giving input parameters for model analyses. We adopted a model analysis method presented by J. Hopwood and F. Qian [J. Appl. Phys. 78, 758 (1995)]. Variations of ionic and atomic densities and ionization fractions against electron density from model calculation agreed with those obtained by measurements. The results showed clearly that electron impact ionization dominates ionization of sputtered titanium in high er electron density regions compared to Penning ionization through Ar metastable atoms. Penning ionization played an important role at the lower electron density region because of the longer time for radiative decay of Ar metastable atoms.

  5. Effect of Power and Nitrogen Content on the Deposition of CrN Films by Using Pulsed DC Magnetron Sputtering Plasma

    NASA Astrophysics Data System (ADS)

    Umm-i-Kalsoom; R., Ahmad; Nisar, Ali; A. Khan, I.; Sehrish, Saleem; Uzma, Ikhlaq; Nasarullah, Khan

    2013-07-01

    CrN thin films are deposited on stainless steel (AISI-304) substrate using pulsed DC magnetron sputtering in a mixture of nitrogen and argon plasma. Two set of samples are prepared. The first set of sample is treated at different powers (100 W to 200 W) in a mixture of argon (95%) and nitrogen (5%). The second set of samples is treated at different nitrogen concentrations (5% to 20%) in argon (95% to 80%) for a constant power (150 W). X-ray diffraction (XRD) analysis exhibits the development of new phases related to different compounds. The crystallinity of CrN varies by varying the applied power and nitrogen content. Crystallite size and residual stresses of the CrN (111) plane show similar variation for the applied power and nitrogen contents. Scanning electron microscopy (SEM) analysis shows the formation of a granular surface morphology that varies with the change of powers and nitrogen content. The thickness of the film is measured using SEM cross sectional images and using atomic force microscopy (AFM) scratch analysis. The maximum film thickness (about 755 nm) is obtained for the film deposited at 5% nitrogen in 95% argon at 150 W power. For these conditions, maximum hardness is also observed.

  6. DC to DC battery charger

    SciTech Connect

    Carr, F.L.; Terrill, L.R.

    1987-01-20

    A DC to DC battery charger is described for a vehicle comprising: adapter plug means for making electrical connections to a first battery through a cigarette lighter socket in the vehicle; means of making electrical connections to a second battery to be charged; a DC to AC converter and an AC to DC rectifier for elevating the voltage from the first battery to a voltage above that of the second battery; integrated circuit means for generating a pulse width modulated current as a function for the charged condition of the second battery; transistor switch means supplied with the pulse width modulated current for developing a charging voltage; a choke coil and a capacitor serially connected to the transistor switch means; and a diode connected across the choke coil and the capacitor whereby the capacitor is charged during pulses of current from the transistor switch means through the choke coil. The choke coil reverses polarity at the termination of the pulses of current and continues to charge the battery through the diode. The DC rectified voltage is controlled by the integrated circuit means for regulating current through the choke coil.

  7. Oxidation Protection of Uranium Nitride Fuel using Liquid Phase Sintering

    SciTech Connect

    Dr. Paul A. Lessing

    2012-03-01

    Two methods are proposed to increase the oxidation resistance of uranium nitride (UN) nuclear fuel. These paths are: (1) Addition of USi{sub x} (e.g. U3Si2) to UN nitride powder, followed by liquid phase sintering, and (2) 'alloying' UN nitride with various compounds (followed by densification via Spark Plasma Sintering or Liquid Phase Sintering) that will greatly increase oxidation resistance. The advantages (high thermal conductivity, very high melting point, and high density) of nitride fuel have long been recognized. The sodium cooled BR-10 reactor in Russia operated for 18 years on uranium nitride fuel (UN was used as the driver fuel for two core loads). However, the potential advantages (large power up-grade, increased cycle lengths, possible high burn-ups) as a Light Water Reactor (LWR) fuel are offset by uranium nitride's extremely low oxidation resistance (UN powders oxidize in air and UN pellets decompose in hot water). Innovative research is proposed to solve this problem and thereby provide an accident tolerant LWR fuel that would resist water leaks and high temperature steam oxidation/spalling during an accident. It is proposed that we investigate two methods to increase the oxidation resistance of UN: (1) Addition of USi{sub x} (e.g. U{sub 3}Si{sub 2}) to UN nitride powder, followed by liquid phase sintering, and (2) 'alloying' UN nitride with compounds (followed by densification via Spark Plasma Sintering) that will greatly increase oxidation resistance.

  8. Spherical boron nitride particles and method for preparing them

    DOEpatents

    Phillips, Jonathan; Gleiman, Seth S.; Chen, Chun-Ku

    2003-11-25

    Spherical and polyhedral particles of boron nitride and method of preparing them. Spherical and polyhedral particles of boron nitride are produced from precursor particles of hexagonal phase boron nitride suspended in an aerosol gas. The aerosol is directed to a microwave plasma torch. The torch generates plasma at atmospheric pressure that includes nitrogen atoms. The presence of nitrogen atoms is critical in allowing boron nitride to melt at atmospheric pressure while avoiding or at least minimizing decomposition. The plasma includes a plasma hot zone, which is a portion of the plasma that has a temperature sufficiently high to melt hexagonal phase boron nitride. In the hot zone, the precursor particles melt to form molten particles that acquire spherical and polyhedral shapes. These molten particles exit the hot zone, cool, and solidify to form solid particles of boron nitride with spherical and polyhedral shapes. The molten particles can also collide and join to form larger molten particles that lead to larger spherical and polyhedral particles.

  9. Impact of sputter deposition parameters on molybdenum nitride thin film properties

    NASA Astrophysics Data System (ADS)

    Stöber, L.; Konrath, J. P.; Krivec, S.; Patocka, F.; Schwarz, S.; Bittner, A.; Schneider, M.; Schmid, U.

    2015-07-01

    Molybdenum and molybdenum nitride thin films are presented, which are deposited by reactive dc magnetron sputtering. The influence of deposition parameters, especially the amount of nitrogen during film synthesization, to mechanical and electrical properties is investigated. The crystallographic phase and lattice constants are determined by x-ray diffraction analyses. Further information on the microstructure as well as on the biaxial film stress are gained from techniques such as transmission electron microscopy, scanning electron microscopy and the wafer bow. Furthermore, the film resistivity and the temperature coefficient of resistance are measured by the van der Pauw technique starting from room temperature up to 300 °C. Independent of the investigated physical quantity, a dominant dependence on the sputtering gas nitrogen content is observed compared to other deposition parameters such as the plasma power or the sputtering gas pressure in the deposition chamber.

  10. Methods of forming boron nitride

    SciTech Connect

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  11. Localized heating of nickel nitride/aluminum nitride nanocomposite films for data storage

    SciTech Connect

    Maya, L.; Thundat, T.; Thompson, J.R.; Stevenson, R.J.

    1995-11-13

    Nickel--aluminum nitride films were prepared by reactive sputtering of a nickel aluminide plate in a nitrogen plasma. The initial product is a nanocomposite containing the nickel as the nitride, Ni{sub 3}N, in aluminum nitride. Heating in vacuum to 500 {degree}C causes selective decomposition of the thermally labile nickel nitride leaving the aluminum nitride unaffected. The nickel nanocomposite is of interest for potential applications as recording media, as are other finely divided dispersions of ferromagnetic metals in insulating matrices. The nickel--aluminum nitride nanocomposite shows a moderate coercive field of 35 Oe at 300 K and, in common with ultrafine particles of ferromagnetic materials, shows superparamagnetic behavior. The Ni{sub 3}N/AlN nanocomposite was subjected to localized heating with the focused beam of an argon-ion laser; this created features several microns in width that could be imaged with a magnetic force microscope, thus confirming its potential as a high density data storage medium. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  12. Evaluation of nitrided titanium separator plates for proton exchange membrane electrolyzer cells

    NASA Astrophysics Data System (ADS)

    Toops, Todd J.; Brady, Michael P.; Zhang, Feng-Yuan; Meyer, Harry M.; Ayers, Katherine; Roemer, Andrew; Dalton, Luke

    2014-12-01

    Proton exchanges membrane (PEM) regenerative fuel cell electrolysis of water is of great recent interest as a hydrogen generation technology. Anode side titanium current collectors and separator plates used in these applications typically employ coatings of platinum group metals to achieve durability and performance requirements in the high voltage, oxidizing environment. The present work assessed the potential for lower cost surface modified titanium by both thermal (gas) nitridation and plasma nitridation approaches. The nitrided Ti was found to result in far less hydrogen uptake in coupon testing than did Pt-plated Ti. Short-term (48 h) single-cell performance at 25 °C was approximately 13% better (lower voltage) at 1.2 A cm-2 for thermal and plasma nitrided plates vs. untreated Ti. However, at 50 °C and 1.5 A cm-2, the thermally nitrided plate exhibited only on the order of 3% better behavior (lower voltage) compared to the untreated Ti and plasma nitrided Ti. Durability testing for 500 h resulted in only a minor degradation in cell performance, on the order of 1-2% voltage increase, with the best behavior exhibited by the thermally nitrided Ti plate. Despite their relatively stable cell performance, extensive local oxidation of the thermally nitrided and plasma nitrided flow field regions was observed.

  13. Method for preparing actinide nitrides

    DOEpatents

    Bryan, G.H.; Cleveland, J.M.; Heiple, C.R.

    1975-12-01

    Actinide nitrides, and particularly plutonium and uranium nitrides, are prepared by reacting an ammonia solution of an actinide compound with an ammonia solution of a reactant or reductant metal, to form finely divided actinide nitride precipitate which may then be appropriately separated from the solution. The actinide nitride precipitate is particularly suitable for forming nuclear fuels.

  14. Role of hydrogen on the deposition and properties of fluorinated silicon-nitride films prepared by inductively coupled plasma enhanced chemical vapor deposition using SiF{sub 4}/N{sub 2}/H{sub 2} mixtures

    SciTech Connect

    Fandino, J.; Santana, G.; Rodriguez-Fernandez, L.; Cheang-Wong, J.C.; Ortiz, A.; Alonso, J.C.

    2005-03-01

    Fluorinated silicon-nitride films have been prepared at low temperature (250 deg. C) by remote plasma enhanced chemical vapor deposition using mixtures of SiF{sub 4}, N{sub 2}, Ar, and various H{sub 2} flow rates. The deposited films were characterized by means of single wavelength ellipsometry, infrared transmission, resonant nuclear reactions, Rutherford backscattering analysis, and current-voltage measurements. It was found that films deposited without hydrogen grow with the highest deposition rate, however, they result with the highest fluorine content ({approx}27 at. %) and excess of silicon (Si/N ratio{approx_equal}1.75). These films also have the lowest refractive index and the highest etch rate, and exhibit very poor dielectric properties. As a consequence of the high fluorine content, these films hydrolize rapidly upon exposure to the ambient moisture, forming Si-H and N-H bonds, however, they do not oxidize completely. The addition of hydrogen to the deposition process reduces the deposition rate but improves systematically the stability and insulating properties of the films by reducing the amount of both silicon and fluorine incorporated during growth. All the fluorinated silicon-nitride films deposited at hydrogen flow rates higher than 3.5 sccm resulted free of Si-H bonds. In spite of the fact that films obtained at the highest hydrogen flow rate used in this work are still silicon rich (Si/N ratio{approx_equal}1.0) and contain a considerable amount of fluorine ({approx}16 at. %), they are chemically stable and show acceptable dielectric properties.

  15. The Effect of Nitrided Layer on Antibacterial Properties for Biomedical Stainless Steel

    NASA Astrophysics Data System (ADS)

    Hung, C. F.; Wu, C. Z.; Lee, W. F.; Ou, K. L.; Liu, C. M.; Peng, P. W.

    Plasma nitriding of AISI type 303 austenitic stainless steel using microwave system at various input powers was conducted in present study. The nitrided layers were characterized via scanning electron microscopy, transmission electron microscopy and Vickers microhardness tester. The anti-bacterial property of this nitrided layer was also evaluated. The analytical results revealed the hardness of AISI type 303 stainless steel could be enhanced with nitriding process. The microstructure of the nitrided layer comprised of nitrogen-expanded γ phase. Bacterial test demonstrated the nitrided layer processed the excellent an ti-bacterial properties. The enhanced hardness and anti-bacterial properties make the nitrided AISI type 303 austenitic stainless steel the potential material in the biomedical applications.

  16. Ion-nitriding of Maraging steel (250 Grade) for Aeronautical application

    NASA Astrophysics Data System (ADS)

    Shetty, K.; Kumar, S.; Rao, P. R.

    2008-03-01

    Ion nitriding is one of the surface modification processes to obtain better wear resistance of the component. Maraging steel (250 Grade) is used to manufacture a critical component in the control surface of a combat aircraft. This part requires high strength and good wear resistance. Maraging steels belong to a new class of high strength steels with the combination of strength and toughness that are among the highest attainable in general engineering alloys. Good wear resistance is achieved by ion-nitriding (also called as plasma nitriding or glow discharge nitriding) process of case nitriding. Ion-nitriding is a method of surface hardening using glow discharge technology to introduce nascent (elemental) nitrogen to the surface of a metal part for subsequent diffusion into the material. In the present investigation, ion-nitriding of Maraging steel (250 grade) is carried out at 450°C and its effect on microstructure and various properties is discussed.

  17. Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex

    NASA Astrophysics Data System (ADS)

    Han, Jeong Hwan; Kim, Hyo Yeon; Lee, Sang Chan; Kim, Da Hye; Park, Bo Keun; Park, Jin-Seong; Jeon, Dong Ju; Chung, Taek-Mo; Kim, Chang Gyoun

    2016-01-01

    A new bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex was synthesized for plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) film. Using the synthesized Ta compound, PEALD of TaN was conducted at growth temperatures of 150-250 °C in combination with NH3 plasma. The TaN PEALD showed a saturated growth rate of 0.062 nm/cycle and a high film density of 9.1-10.3 g/cm3 at 200-250 °C. Auger depth profiling revealed that the deposited TaN film contained low carbon and oxygen impurity levels of approximately 3-4%. N-rich amorphous TaN films were grown at all growth temperatures and showed highly resistive characteristic. The Cu barrier performance of the TaN film was evaluated by annealing of Cu/TaN (0-6 nm)/Si stacks at 400-800 °C, and excellent Cu diffusion barrier properties were observed even with ultrathin 2 nm-thick TaN film.

  18. Adaptable DC offset correction

    NASA Technical Reports Server (NTRS)

    Golusky, John M. (Inventor); Muldoon, Kelly P. (Inventor)

    2009-01-01

    Methods and systems for adaptable DC offset correction are provided. An exemplary adaptable DC offset correction system evaluates an incoming baseband signal to determine an appropriate DC offset removal scheme; removes a DC offset from the incoming baseband signal based on the appropriate DC offset scheme in response to the evaluated incoming baseband signal; and outputs a reduced DC baseband signal in response to the DC offset removed from the incoming baseband signal.

  19. Reactive sputter deposition of boron nitride

    SciTech Connect

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied {minus}300 V dc bias.

  20. Synthesis of aluminium nitride/boron nitride composite materials

    SciTech Connect

    Xiao, T.D. . Polymer Science Program and Dept. of Chemistry); Gonsalves, K.E. . Polymer Science Program and Dept. of Chemistry Univ. of Connecticut, Storrs, CT . Dept. of Chemistry); Strutt, P.R. . Dept. of Metallurgy)

    1993-04-01

    Aluminum nitride/boron nitride composite was synthesized by using boric acid, urea, and aluminum chloride (or aluminum lactate) as the starting compounds. The starting materials were dissolved in water and mixed homogeneously. Ammonolysis of this aqueous solution resulted in the formation of a precomposite gel, which converted into the aluminum nitride/boron nitride composite on further heat treatment. Characterization of both the precomposite and the composite powders included powder X-ray diffraction, Fourier transform infrared spectroscopy, and scanning electron microscopy. Analysis of the composite revealed that the aluminum nitride phase had a hexagonal structure, and the boron nitride phase a turbostratic structure.

  1. Gallium nitride optoelectronic devices

    NASA Technical Reports Server (NTRS)

    Chu, T. L.; Chu, S. S.

    1972-01-01

    The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

  2. Boron nitride nanotubes

    DOEpatents

    Smith, Michael W.; Jordan, Kevin; Park, Cheol

    2012-06-06

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  3. Boron nitride composites

    DOEpatents

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  4. Boron Nitride Nanotubes

    NASA Technical Reports Server (NTRS)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  5. High-Efficiency dc/dc Converter

    NASA Technical Reports Server (NTRS)

    Sturman, J.

    1982-01-01

    High-efficiency dc/dc converter has been developed that provides commonly used voltages of plus or minus 12 Volts from an unregulated dc source of from 14 to 40 Volts. Unique features of converter are its high efficiency at low power level and ability to provide output either larger or smaller than input voltage.

  6. Spatial Distributions of Electron, CF, and CF2 Radical Densities and Gas Temperature in DC-Superposed Dual-Frequency Capacitively Coupled Plasma Etch Reactor Employing Cyclic-C4F8/N2/Ar Gas

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Tsuyoshi; Kimura, Tetsuya; Koshimizu, Chishio; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Sekine, Makoto; Hori, Masaru

    2011-05-01

    On a plasma etch reactor for a wafer of 300 mm in diameter, the spatial distributions of the absolute densities of CF and CF2 radicals, electron density (ne), and the gas temperature (Tg) of N2 were measured employing the dual frequency of negative dc voltage superposed to a very high frequency (VHF) of 60 MHz capacitively coupled plasma (DS-2f-CCP) with the cyclic- (c-)C4F8/Ar/N2 gas mixture. The dc bias was superposed on the upper electrode with a frequency of 60 MHz. The distributions of electron and radical densities were uniform within a diameter of about 260 mm, and took a monotonic decay in regions outside a diameter of 260 mm on the reactor for 300 mm wafers in the reactor. It was found that only CF2 density at the radial position between 150 and 180 mm, corresponding to the position of the Si focus ring, dropped, while CF density took a uniform distribution over a diameter of 260 mm. Additionally, at this position, the rotational temperature of N2 gas increased to be 100 K larger than that at the center position. CF2 radical density was markedly affected by the modified surface loss probability of the material owing to coupling with surface temperature.

  7. Ion-nitriding of the AISI M2 high speed tool steel and comparison of its mechanical properties with nitrided steels

    SciTech Connect

    Cimen, O.; Alnipak, B.

    1995-12-31

    In the past it was shown that plasma diffusion treatment of steels has several advantages over conventional processes such as gas or salt bath nitriding and nitrocarburizing. Plasma diffusion treatment allows close control of the process so that surface layers with defined microstructures and properties can be obtained. The amount of {gamma}{prime} and {epsilon} phase present can be easily controlled. In this paper, variation of surfaces hardness properties of AISI M2 high speed tool speed after ion nitriding treatments were investigated. The mechanical and electro-chemical advantages of the ion nitrided structures were compared with the other methods.

  8. Abnormal Nitride Morphologies upon Nitriding Iron-Based Substrates

    NASA Astrophysics Data System (ADS)

    Meka, Sai Ramudu; Mittemeijer, Eric Jan

    2013-06-01

    Nitriding of iron-based components is a very well-known surface engineering method for bringing about great improvement of the mechanical and chemical properties. An overview is presented of the strikingly different nitride morphologies developing upon nitriding iron-based alloy substrates. Observed abnormal morphologies are the result of intricate interplay of the thermodynamic and kinetic constraints for the nucleation and growth of both alloying element nitride particles in the matrix and iron nitrides at the surface of the substrate. Alloying elements having strong Me-N interaction, such as Cr, V, and Ti, precipitate instantaneously as internal Me-nitrides, thus allowing the subsequent nucleation and growth of "normal" layer-type iron nitride. Alloying elements having weak Me-N interaction, such as Al, Si, and Mo, and simultaneously having low solubility in iron nitride, obstruct/delay the nucleation and growth of iron nitrides at the surface, thus leading to very high nitrogen supersaturation over an extended depth range from the surface. Eventually, the nucleation and growth of "abnormal" plate-type iron nitride occurs across the depth range of high nitrogen supersaturation. On this basis, strategies can be devised for tuned development of specific nitride morphologies at the surface of nitrided components.

  9. Boron nitride housing cools transistors

    NASA Technical Reports Server (NTRS)

    1965-01-01

    Boron nitride ceramic heat sink cools transistors in r-f transmitter and receiver circuits. Heat dissipated by the transistor is conducted by the boron nitride housing to the metal chassis on which it is mounted.

  10. Remote quantitative temperature and thickness measurements of plasma-deposited titanium nitride thin coatings on steel using a laser interferometric thermoreflectance optical thermometer

    SciTech Connect

    Liu Yue; Mandelis, Andreas; Choy, Mervyn; Wang, Chinhua; Segal, Lee

    2005-08-15

    An optical thermometer based on the principle of laser thermoreflectance has been introduced to monitor the surface temperature of thin coatings on steel parts undergoing an industrial titanium nitride (TiN) alloy deposition process. To study the feasibility of the optical thermometer, various thermo-optical parameters of TiN affected by the deposition process have been investigated; namely, the reflectance-temperature relation, the thermoreflectance coefficient, and the coating thickness dependence of thermoreflectance and of total reflectance. A theory of interferometric thermoreflectance has been introduced to model the total reflectance variations during the coating process. An inverse reflectance-temperature relation for the TiN-D2 steel substrate system has been found and a first-order Taylor series expansion used to model thermoreflectance has been shown to yield a thermoreflectance coefficient which is independent of temperature. Both results are in quantitative agreement with the Drude-Zener theory of conductors and semi-conductors. An empirical formula has been derived to effectively model the experimental thermoreflectance coefficient dependence of the TiN-D2 steel system on TiN coating thickness, in qualitative agreement with scattering mechanisms of the Boltzmann transport theory in conductors and semiconductors. The good agreement of theoretical interferometric thermoreflectance simulations with in situ measurements during a specific industrial TiN sputter-coating growth process and the independence of the thermoreflectance and thin-coating-thickness reflectance coefficients from temperature show the potential of using this nonintrusive noncontacting technique as an optical thermometer to determine surface temperatures of physically inaccessible samples undergoing industrial coating deposition processes.

  11. Silicon Nitride For Gallium Arsenide Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Nagle, J.; Morgan, David V.

    1987-04-01

    Gallium Arsenide, unlike silicon does not have a natural oxide with the dielectric and interface qualities of SiO2. As a consequence alternative techniques have to be developed for device and IC processing applications. Plasma deposited silicon nitride films are currently being investigated in many laboratories. This paper will deal with the characterization of such films deposited under a range of gas and plasma deposition conditions. The techniques of Infra Red Spectroscopy and Rutherford backscattering have been used for characterization of both "as deposited layers" and layers which have been annealed up to temperatures of 800 °C, after deposition. The use of RBS for silicon nitride on GaAs is limited since the relatively small nitride spectrum is superimposed on much larger GaAs spectrum. The problem can be removed by placing carbon test substrates alongside the GaAs wafers. This separates the silicon and nitrogen spectra from the substrate enabling enhanced accuracy to be obtained. In this paper the range of results obtained will be discussed in the context of the deposition condition in order to identify the optimum conditions for obtaining a stoichiometric compound and a high quality interface.

  12. Nitride quantum light sources

    NASA Astrophysics Data System (ADS)

    Zhu, T.; Oliver, R. A.

    2016-02-01

    Prototype nitride quantum light sources, particularly single-photon emitters, have been successfully demonstrated, despite the challenges inherent in this complex materials system. The large band offsets available between different nitride alloys have allowed device operation at easily accessible temperatures. A wide range of approaches has been explored: not only self-assembled quantum dot growth but also lithographic methods for site-controlled nanostructure formation. All these approaches face common challenges, particularly strong background signals which contaminate the single-photon stream and excessive spectral diffusion of the quantum dot emission wavelength. If these challenges can be successfully overcome, then ongoing rapid progress in the conventional III-V semiconductors provides a roadmap for future progress in the nitrides.

  13. DC/DC Converter Stability Testing Study

    NASA Technical Reports Server (NTRS)

    Wang, Bright L.

    2008-01-01

    This report presents study results on hybrid DC/DC converter stability testing methods. An input impedance measurement method and a gain/phase margin measurement method were evaluated to be effective to determine front-end oscillation and feedback loop oscillation. In particular, certain channel power levels of converter input noises have been found to have high degree correlation with the gain/phase margins. It becomes a potential new method to evaluate stability levels of all type of DC/DC converters by utilizing the spectral analysis on converter input noises.

  14. Nitrided Metallic Bipolar Plates

    SciTech Connect

    Brady, Michael P; Tortorelli, Peter F; Pihl, Josh A; Toops, Todd J; More, Karren Leslie; Meyer III, Harry M; Vitek, John Michael; Wang, Heli; Turner, John; Wilson, Mahlon; Garzon, Fernando; Rockward, Tommy; Connors, Dan; Rakowski, Jim; Gervasio, Don

    2008-01-01

    The objectives are: (1) Develop and optimize stainless steel alloys amenable to formation of a protective Cr-nitride surface by gas nitridation, at a sufficiently low cost to meet DOE targets and with sufficient ductility to permit manufacture by stamping. (2) Demonstrate capability of nitridation to yield high-quality stainless steel bipolar plates from thin stamped alloy foils (no significant stamped foil warping or embrittlement). (3) Demonstrate single-cell fuel cell performance of stamped and nitrided alloy foils equivalent to that of machined graphite plates of the same flow-field design ({approx}750-1,000 h, cyclic conditions, to include quantification of metal ion contamination of the membrane electrode assembly [MEA] and contact resistance increase attributable to the bipolar plates). (4) Demonstrate potential for adoption in automotive fuel cell stacks. Thin stamped metallic bipolar plates offer the potential for (1) significantly lower cost than currently-used machined graphite bipolar plates, (2) reduced weight/volume, and (3) better performance and amenability to high volume manufacture than developmental polymer/carbon fiber and graphite composite bipolar plates. However, most metals exhibit inadequate corrosion resistance in proton exchange membrane fuel cell (PEMFC) environments. This behavior leads to high electrical resistance due to the formation of surface oxides and/or contamination of the MEA by metallic ions, both of which can significantly degrade fuel cell performance. Metal nitrides offer electrical conductivities up to an order of magnitude greater than that of graphite and are highly corrosion resistant. Unfortunately, most conventional coating methods (for metal nitrides) are too expensive for PEMFC stack commercialization or tend to leave pinhole defects, which result in accelerated local corrosion and unacceptable performance.

  15. Laser nitriding and laser carburizing of surfaces

    NASA Astrophysics Data System (ADS)

    Schaaf, Peter

    2003-11-01

    Laser irradiation of surfaces with short pulses in reactive atmospheres (nitrogen, methane) can lead to very effective nitrification and carburization via complicated laser-surface-gas-plasma-interactions. This laser nitriding and laser carburizing and their basic underlying phenomena will be presented and partly explained by results of example materials (iron, titanium, aluminum, silicon) where nitride and carbide coatings can be formed by fast and easily by Excimer Laser, Nd:YAG laser, Free Electron Laser and also by femtosecond Ti:sapphire laser. This implies laser pulse durations from the nanosecond to the femtosecond regime and wavelengths from ultra-violet to infrared. The resulting surfaces, thin films, coatings and their properties are investigated by combining Mossbauer Spectroscopy, x-ray diffraction, x-ray absorption spectroscopy, Nanoindentation, Resonant Nuclear Reaction Analysis, and Rutherford Backscattering Spectroscopy.

  16. Cubic nitride templates

    DOEpatents

    Burrell, Anthony K; McCleskey, Thomas Mark; Jia, Quanxi; Mueller, Alexander H; Luo, Hongmei

    2013-04-30

    A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.

  17. High Temperature Characteristic in Electrical Breakdown and Electrical Conduction of Epoxy/Boron-nitride Composite

    NASA Astrophysics Data System (ADS)

    Takenaka, Yutaka; Kurimoto, Muneaki; Murakami, Yoshinobu; Nagao, Masayuki

    The power module for the electrical vehicle needs electrical insulation material with high thermal conductivity. Recently, the epoxy insulating material filled with boron-nitride particles (epoxy/boron-nitride composite) is focused as an effective solution. However, the insulation performance of epoxy/boron-nitride composite was not investigated enough especially at the high temperature in which the power module was used, i.e. more than 100°C. In this paper, we investigated high temperature characteristics in electrical breakdown and conduction current of epoxy/boron-nitride composite. Breakdown test under the application of DC lamp voltage and impulse voltage clarified that the epoxy/boron-nitride composite had the constant breakdown strength even in the high temperature. Comparison of the epoxy/boron-nitride composite with previous material, which was epoxy/alumina composite, indicated that the breakdown voltage of the epoxy/boron-nitride composite in the high temperature was found to be higher than that of epoxy/alumina composite under the same thermal-transfer quantity among them. Furthermore, conduction current measurement of epoxy/boron-nitride composite in the high temperature suggested the possibility of the ionic conduction mechanism.

  18. The Structure and Properties of Pulsed dc Sputtered Nanocrystalline NbN Coatings for Proton Exchange Membrane Fuel Cell.

    PubMed

    Chun, Sung-Yong

    2016-02-01

    Niobium nitride coatings for the surface modified proton exchange membrane fuel cells with various pulse parameters have been prepared using dc (direct current) and asymmetric-bipolar pulsed dc magnetron sputtering. The pulse frequency and the duty cycle were varied from 5 to 50 kHz and 50 to 95%, respectively. The deposition rate, grain size and resistivity of pulsed dc sputtered films were decreased when the pulse frequency increased, while the nano hardness of niobium nitride films increased. We present in detail coatings (e.g., deposition rate, grain size, prefer-orientation, resistivity and hardness). Our studies show that niobium nitride coatings with superior properties can be prepared using asymmetric-bipolar pulsed dc sputtering. PMID:27433732

  19. Theory of gain in group-III nitride lasers

    SciTech Connect

    Chow, W.W.; Wright, A.F.; Girndt, A.

    1997-06-01

    A microscopic theory of gain in a group-III nitride quantum well laser is presented. The approach, which treats carrier correlations at the level of quantum kinetic theory, gives a consistent account of plasma and excitonic effects in an inhomogeneously broadened system.

  20. Sintering silicon nitride

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P. (Inventor); Levine, Stanley R. (Inventor); Sanders, William A. (Inventor)

    1993-01-01

    Oxides having a composition of (Ba(1-x)Sr(x))O-Al2O3-2SiO2 are used as sintering aids for producing an improved silicon nitride ceramic material. The x must be greater than 0 to insure the formation of the stable monoclinic celsian glass phase.

  1. Deposition of hard and adherent diamond-like carbon films inside steel tubes using a pulsed-DC discharge.

    PubMed

    Trava-Airoldi, Vladimir Jesus; Capote, Gil; Bonetti, Luís Francisco; Fernandes, Jesum; Blando, Eduardo; Hübler, Roberto; Radi, Polyana Alves; Santos, Lúcia Vieira; Corat, Evaldo José

    2009-06-01

    A new, low cost, pulsed-DC plasma-enhanced chemical vapor deposition system that uses a bipolar, pulsed power supply was designed and tested to evaluate its capacity to produce quality diamond-like carbon films on the inner surface of steel tubes. The main focus of the study was to attain films with low friction coefficients, low total stress, a high degree of hardness, and very good adherence to the inner surface of long metallic tubes at a reasonable growth rate. In order to enhance the diamond-like carbon coating adhesion to metallic surfaces, four steps were used: (1) argon ion sputtering; (2) plasma nitriding; (3) a thin amorphous silicon interlayer deposition, using silane as the precursor gas; and (4) diamond-like carbon film deposition using methane atmosphere. This paper presents various test results as functions of the methane gas pressure and of the coaxial metal anode diameter, where the pulsed-DC voltage constant is kept constant. The influence of the coaxial metal anode diameter and of the methane gas pressure is also demonstrated. The results obtained showed the possibilities of using these DLC coatings for reduced friction and to harden inner surface of the steel tubes. PMID:19504937

  2. Secret of formulating a selective etching or cleaning solution for boron nitride (BN) thin film

    NASA Astrophysics Data System (ADS)

    Hui, Wing C.

    2004-04-01

    Boron nitride thin film has a very unique characteristic of extremely high chemical inertness. Thus, it is a better hard mask than silicon nitride for aggressive etching solutions, such as the isotropic HF/HNO3/CH3COOH (or HNA) etchant for silicon. However, because of its high chemical inertness, it is also difficult to remove it. Plasma etching with Freon gases can etch the boron nitride film, but it is unselective to silicon, silicon dioxide or silicon nitride. Cleaning up the boron nitride film with plasma etching will usually leave a damaged or foggy surface. A special wet chemical solution has been developed for etching or cleaning boron nitride film selectively. It can etch boron nitride, but not the coatings or substrates of silicon, silicon nitride and silicon dioxide. It is a very strong oxidizing agent consisting of concentrated sulfuric acid (H2SO4) and hydrogen peroxide (H2O2), but different from the common Piranha Etch. It may be even more interesting to understand the logic or secret behind of how to formulate a new selective etching solution. Various chemical and chemical engineering aspects were considered carefully in our development process. These included creating the right electrochemical potential for the etchant, ensuring large differences in chemical kinetics to make the reactions selective, providing proper mass transfer for removing the by products, etc.

  3. Effect of plasma surface modification on the biocompatibility of UHMWPE.

    PubMed

    Kaklamani, G; Mehrban, N; Chen, J; Bowen, J; Dong, H; Grover, L; Stamboulis, A

    2010-10-01

    In this paper active screen plasma nitriding (ASPN) is used to chemically modify the surface of UHMWPE. This is an unexplored and new area of research. ASPN allows the homogeneous treatment of any shape or surface at low temperature; therefore, it was thought that ASPN would be an effective technique to modify organic polymer surfaces. ASPN experiments were carried out at 120 °C using a dc plasma nitriding unit with a 25% N(2) and 75% H(2) atmosphere at 2.5 mbar of pressure. UHMWPE samples treated for different time periods were characterized by nanoindentation, FTIR, XPS, interferometry and SEM. A 3T3 fibroblast cell line was used for in vitro cell culture experiments. Nanoindentation of UHMWPE showed that hardness and elastic modulus increased with ASPN treatment compared to the untreated material. FTIR spectra did not show significant differences between the untreated and treated samples; however, some changes were observed at 30 min of treatment in the range of 1500-1700 cm(-1) associated mainly with the presence of N-H groups. XPS studies showed that nitrogen was present on the surface and its amount increased with treatment time. Interferometry showed that no significant changes were observed on the surfaces after the treatment. Finally, cell culture experiments and SEM showed that fibroblasts attached and proliferated to a greater extent on the plasma-treated surfaces leading to the conclusion that ASPN surface treatment can potentially significantly improve the biocompatibility behaviour of polymeric materials. PMID:20876959

  4. End-boundary sheath potential, Langmuir waves, electron and ion energy distribution in the low pressure DC powered Non-ambipolar Electron Plasma

    NASA Astrophysics Data System (ADS)

    Chen, Lee; Chen, Zhiying; Funk, Merritt

    2013-09-01

    The non-ambipolar electron plasma (NEP) is heated by electron beam extracted from the electron-source Ar plasma through a dielectric injector by an accelerator located inside NEP. NEP pressure is in the 1-3mTorr range of N2 and its accelerator voltage varied from VA = + 80 to VA = + 600V. The non-ambipolar beam-current injected into NEP is in the range of 10s Acm-2 and it heats NEP through beam-plasma instabilities. Its EED f has a Maxwellian bulk followed by a broad energy-continuum connecting to the most energetic group with energies above the beam-energy. The remnant of the injected electron-beam power terminates at the NEP end-boundary floating-surface setting up sheath potentials from VS = 80 to VS = 580V in response to the applied values of VA. The floating-surface is bombarded by a space-charge neutral plasma-beam whose IED f is near mono-energetic. When the injected electron-beam power is adequately damped by NEP, its end-boundary floating-surface VS can be linearly controlled at almost 1:1 ratio by VA. NEP does not have an electron-free sheath; its ``sheath'' is a widen presheath that consists of a thermal presheath followed by an ``anisotropic'' presheath, leading up to the end-boundary floating-surface. Its ion-current of the plasma-beam is much higher than what a conventional thermal presheath can supply. If the NEP parameters cannot damp the electron beam power sufficiently, VS will collapse and becomes irresponsive to VA.

  5. Analysis of trace metals in thin silicon nitride films by total-reflection X-ray fluorescence

    NASA Astrophysics Data System (ADS)

    Vereecke, G.; Arnauts, S.; Van Doorne, P.; Kenis, K.; Onsia, B.; Verstraeten, K.; Schaekers, M.; Van Hoeymissen, J. A. B.; Heyns, M. M.

    2001-11-01

    The validity of a matrix withdrawal method for the analysis of trace metals in silicon nitride films on silicon wafers by total-reflection X-ray fluorescence has been evaluated with samples contaminated with diluted standard solutions of eight metals (Ca, V, Cr, Fe, Ni, Cu, Ta, W). The nitride matrix was removed by a decomposition step with HF vapor at ambient conditions followed by the vaporization of the product at a temperature higher than 240°C. The recovery of added metals was determined first directly after vaporization and secondly after preconcentration by the droplet collection (DC) method. The recovery of metals after vaporization at a temperature of 300±50°C was generally close to 100%, except for Cu whose recovery was approximately 40%. The efficiency of the DC step was approximately 50% for most metals but only 10-20% for Cu and Cr. Thus for most metals the total recovery was close to 50%, which is acceptable for analytical purpose. The recovery of Cu and Cr was studied in more detail considering the influence of the thickness of the nitride film, the vaporization temperature, and the composition of the DC solution. The total recovery of Cu increased from approximately 10 to 40% by lowering the temperature of the vaporization step and using a more concentrated DC solution. The recovery of Cr by DC was markedly influenced by the thickness of the nitride film with no great benefit of using a more concentrated DC solution.

  6. DC source assemblies

    DOEpatents

    Campbell, Jeremy B; Newson, Steve

    2013-02-26

    Embodiments of DC source assemblies of power inverter systems of the type suitable for deployment in a vehicle having an electrically grounded chassis are provided. An embodiment of a DC source assembly comprises a housing, a DC source disposed within the housing, a first terminal, and a second terminal. The DC source also comprises a first capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the first terminal. The DC source assembly further comprises a second capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the second terminal.

  7. Superplastic forging nitride ceramics

    DOEpatents

    Panda, Prakash C.; Seydel, Edgar R.; Raj, Rishi

    1988-03-22

    The invention relates to producing relatively flaw free silicon nitride ceramic shapes requiring little or no machining by superplastic forging This invention herein was made in part under Department of Energy Grant DE-AC01-84ER80167, creating certain rights in the United States Government. The invention was also made in part under New York State Science and Technology Grant SB1R 1985-10.

  8. Characterization and in vivo evaluation of a bio-corrodible nitrided iron stent.

    PubMed

    Feng, Qimao; Zhang, Deyuan; Xin, Chaohua; Liu, Xiangdong; Lin, Wenjiao; Zhang, Wanqian; Chen, Sun; Sun, Kun

    2013-03-01

    A bio-corrodible nitrided iron stent was developed using a vacuum plasma nitriding technique. In the nitrided iron stents, the tensile strength, radial strength, stiffness and in vitro electrochemical corrosion rate were significantly increased compared with those of the control pure iron stent. To evaluate its performance in vivo, the deployment of the nitrided iron stents in juvenile pig iliac arteries was performed. At 3 or 6 months postoperatively, the stented vessels remained patent well; however, slight luminal loss resulting from intimal hyperplasia and relative stenosis of the stented vessel segment with piglets growth were observed by 12 months; no thrombosis or local tissue necrosis was found. At 1 month postoperatively, a nearly intact layer of endothelial cells formed on the stented vessel wall. Additionally, a decreased inflammation scoring, considerably corroded struts and corrosion products accumulation were seen. These findings indicate the potential of this nitrided iron stent as an attractive biodegradable stent. PMID:23183963

  9. First stages of surface steel nitriding: X-ray photoelectron spectroscopy and electrical measurements

    NASA Astrophysics Data System (ADS)

    Flori, M.; Gruzza, B.; Bideux, L.; Monier, G.; Robert-Goumet, C.; Benamara, Z.

    2009-08-01

    Quantitative and qualitative analysis techniques were employed to study the first stages of ultra-high vacuum plasma nitriding of the 42CrMo4 steel. At constant treatment temperature, maintained for all samples at about 360 °C, we have established the influence of treatment time on the chemical composition, thickness and electrical properties of the nitrided layer. In this purpose it was used a stacking atomic layer model describing the sample surface, which takes into account the attenuation depth of photoelectrons by the atomic monolayers. So, we have found that after 2 h of nitriding in laboratory conditions, 70% of the nitrided layer was composed of iron oxide. Also, I- V measurements indicate an influence of the nitride overlayer with increasing treatment time.

  10. Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

    NASA Astrophysics Data System (ADS)

    Sowers, A. T.; Christman, J. A.; Bremser, M. D.; Ward, B. L.; Davis, R. F.; Nemanich, R. J.

    1997-10-01

    Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO2 layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10-100 nA and required grid voltages ranging from 20-110 V. The grid currents were typically 1 to 104 times the collector currents.

  11. Tribological and microstructural characteristics of ion-nitrided steels

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1983-01-01

    Three steels AISI 4140, AISI 4340 and AISI 304 stainless steel were ion nitrided in a plasma consisting of a 75:25 mixture of H2:N2, sometimes with a trace of CH4. Their surface topography was characterized by SEM and two distinct compound phases were identified: the gamma and the epsilon. The core-case hardness profiles were also established. The low Cr alloy steels have an extended diffusion zone in contrast to the 304 stainless steels which have a sharp interface. The depth of ion-nitriding is increased as the Cr content is decreased. Friction tests reveal that the gamma surface phase has a lower coefficient of friction than the epsilon phase. The lowest coefficient of friction is achieved when both the rider and the specimen surface are ion nitrided.

  12. Active Control of Nitride Plasmonic Dispersion in the Far Infrared.

    SciTech Connect

    Shaner, Eric A.; Dyer, Gregory Conrad; Seng, William Francis; Bethke, Donald Thomas; Grine, Albert Dario,; Baca, Albert G.; Allerman, Andrew A.

    2014-11-01

    We investigate plasmonic structures in nitride-based materials for far-infrared (IR) applications. The two dimensional electron gas (2DEG) in the GaN/AlGaN material system, much like metal- dielectric structures, is a patternable plasmonic medium. However, it also permits for direct tunability via an applied voltage. While there have been proof-of-principle demonstrations of plasma excitations in nitride 2DEGs, exploration of the potential of this material system has thus far been limited. We recently demonstrated coherent phenomena such as the formation of plasmonic crystals, strong coupling of tunable crystal defects to a plasmonic crystal, and electromagnetically induced transparency in GaAs/AlGaAs 2DEGs at sub-THz frequencies. In this project, we explore whether these effects can be realized in nitride 2DEG materials above 1 THz and at temperatures exceeding 77 K.

  13. Tribological and microstructural characteristics of ion-nitrided steels

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1983-01-01

    Three steels AISI 4140, AISI 4340 and AISI 304 stainless steel were ion nitrided in a plasma consisting of a 75:25 mixture of H2:N2, sometimes with a trace of CH4. Their surface topography was characterized by SEM and two distinct compound phases were identified: the gamma and the epsilon. The core-case hardness profiles were also established. The low Cr alloy steels have an extended diffusion zone in contrast to the 3034 stainless steels which have a sharp interface. The depth of ion-nitriding is increased as the Cr content is decreased. Friction tests reveal that the gamma surface phase has a lower coefficient of friction than the epsilon phase. The lowest coefficient of friction is achieved when both the rider and the specimen surface are ion nitrided. Previously announced in STAR as N83-24635

  14. Gallium nitride electronics

    NASA Astrophysics Data System (ADS)

    Rajan, Siddharth; Jena, Debdeep

    2013-07-01

    In the past two decades, there has been increasing research and industrial activity in the area of gallium nitride (GaN) electronics, stimulated first by the successful demonstration of GaN LEDs. While the promise of wide band gap semiconductors for power electronics was recognized many years before this by one of the contributors to this issue (J Baliga), the success in the area of LEDs acted as a catalyst. It set the field of GaN electronics in motion, and today the technology is improving the performance of several applications including RF cell phone base stations and military radar. GaN could also play a very important role in reducing worldwide energy consumption by enabling high efficiency compact power converters operating at high voltages and lower frequencies. While GaN electronics is a rapidly evolving area with active research worldwide, this special issue provides an opportunity to capture some of the great advances that have been made in the last 15 years. The issue begins with a section on epitaxy and processing, followed by an overview of high-frequency HEMTs, which have been the most commercially successful application of III-nitride electronics to date. This is followed by review and research articles on power-switching transistors, which are currently of great interest to the III-nitride community. A section of this issue is devoted to the reliability of III-nitride devices, an area that is of increasing significance as the research focus has moved from not just high performance but also production-worthiness and long-term usage of these devices. Finally, a group of papers on new and relatively less studied ideas for III-nitride electronics, such as interband tunneling, heterojunction bipolar transistors, and high-temperature electronics is included. These areas point to new areas of research and technological innovation going beyond the state of the art into the future. We hope that the breadth and quality of articles in this issue will make it

  15. Simulation of Gas Mixtures in RF Discharges for Nitride Deposition

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    Tungsten and titanium nitride films have long been grown by chemical vapor deposition (CVD) methods. However, there has been recent interest in low temperature growth using plasma enhanced CVD. For the present work, we focus on the radio frequency (BE) discharge characteristics of gas mixtures used in nitride deposition (for example, WF6 and ammonia). Because the radial variations for a standard 200 mm, parallel plate reactor are limited to a small zone near the edges of the electrodes, a 1-D (one-dimensional) analysis is considered. This model consists of a self-consistent, 3-D (three-dimensional) moment fluid simulation that solves the continuity, momentum, and energy equations for neutral and charged species. The results in terms of plasma structure, radical concentrations, and local deposition rate will be presented. We will also compare the 1-D results with those obtained from a 2-D hybrid plasma equipment model (HPEM) developed at the University of Illinois.

  16. Detoxifying PCDD/Fs and heavy metals in fly ash from medical waste incinerators with a DC double are plasma torch.

    PubMed

    Pan, Xinchao; Yan, Jianhua; Xie, Zhengmiao

    2013-07-01

    Medical waste incinerator (MWI) fly ash is regarded as a highly toxic waste because it contains high concentrations of heavy metals and dioxins, including polychlorinated dibenzo-p-dioxins (PCDDs) and polychlorinated dibenzofurans (PCDFs). Therefore fly ash from MWI must be appropriately treated before being discharged into the environment. A melting process based on a direct current thermal plasma torch has been developed to convert MWI fly ash into harmless slag. The leaching characteristics of heavy metals in fly ash and vitrified slag were investigated using the toxicity characteristic leaching procedure, while the content of PCDD/Fs in the fly ashes and slags was measured using method 1613 of the US EPA. The experimental results show that the decomposition rate of PCDD/Fs is over 99% in toxic equivalent quantity value and the leaching of heavy metals in the slag significantly decreases after the plasma melting process. The produced slag has a compact and homogeneous microstructure with density of up to 2.8 g/cm3. PMID:24218848

  17. Radiation effects on DC-DC Converters

    NASA Technical Reports Server (NTRS)

    Zhang, Dexin; Attia, John O.; Kankam, Mark D. (Technical Monitor)

    2000-01-01

    DC-DC switching converters are circuits that can be used to convert a DC voltage of one value to another by switching action. They are increasing being used in space systems. Most of the popular DC-DC switching converters utilize power MOSFETs. However power MOSFETs, when subjected to radiation, are susceptible to degradation of device characteristics or catastrophic failure. This work focuses on the effects of total ionizing dose on converter performance. Four fundamental switching converters (buck converter, buck-boost converter, cuk converter, and flyback converter) were built using Harris IRF250 power MOSFETs. These converters were designed for converting an input of 60 volts to an output of about 12 volts with a switching frequency of 100 kHz. The four converters were irradiated with a Co-60 gamma source at dose rate of 217 rad/min. The performances of the four converters were examined during the exposure to the radiation. The experimental results show that the output voltage of the converters increases as total dose increases. However, the increases of the output voltage were different for the four different converters, with the buck converter and cuk converter the highest and the flyback converter the lowest. We observed significant increases in output voltage for cuk converter at a total dose of 24 krad (si).

  18. Single gallium nitride nanowire lasers.

    PubMed

    Johnson, Justin C; Choi, Heon-Jin; Knutsen, Kelly P; Schaller, Richard D; Yang, Peidong; Saykally, Richard J

    2002-10-01

    There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasersand nonlinear optical frequency converters. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet-blue light-emitting diodes, lasers and photodetectors. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films. Here we report the observation of ultraviolet-blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry-Perot modes (Q approximately 10(3)) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV microJ x cm(-2)) supports the idea that the electron-hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet-blue coherent light sources. PMID:12618824

  19. Group-III Nitride Field Emitters

    NASA Technical Reports Server (NTRS)

    Bensaoula, Abdelhak; Berishev, Igor

    2008-01-01

    Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude

  20. Electrochemical nitridation of metal surfaces

    SciTech Connect

    Wang, Heli; Turner, John A.

    2015-06-30

    Electrochemical nitridation of metals and the produced metals are disclosed. An exemplary method of electrochemical nitridation of metals comprises providing an electrochemical solution at low temperature. The method also comprises providing a three-electrode potentiostat system. The method also comprises stabilizing the three-electrode potentiostat system at open circuit potential. The method also comprises applying a cathodic potential to a metal.

  1. Structure, Mechanics and Synthesis of Nanoscale Carbon and Boron Nitride

    NASA Astrophysics Data System (ADS)

    Rinaldo, Steven G.

    This thesis is divided into two parts. In Part I, we examine the properties of thin sheets of carbon and boron nitride. We begin with an introduction to the theory of elastic sheets, where the stretching and bending modes are considered in detail. The coupling between stretching and bending modes is thought to play a crucial role in the thermodynamic stability of atomically-thin 2D sheets such as graphene. In Chapter 2, we begin by looking at the fabrication of suspended, atomically thin sheets of graphene. We then study their mechanical resonances which are read via an optical transduction technique. The frequency of the resonators was found to depend on their temperature, as was their quality factor. We conclude by offering some interpretations of the data in terms of the stretching and bending modes of graphene. In Chapter 3, we look briefly at the fabrication of thin sheets of carbon and boron nitride nanotubes. We examine the structure of the sheets using transmission and scanning electron microscopy (TEM and SEM, respectively). We then show a technique by which one can make sheets suspended over a trench with adjustable supports. Finally, DC measurements of the resistivity of the sheets in the temperature range 600 -- 1400 C are presented. In Chapter 4, we study the folding of few-layer graphene oxide, graphene and boron nitride into 3D aerogel monoliths. The properties of graphene oxide are first considered, after which the structure of graphene and boron nitride aerogels is examined using TEM and SEM. Some models for their structure are proposed. In Part II, we look at synthesis techniques for boron nitride (BN). In Chapter 5, we study the conversion of carbon structures of boron nitride via the application of carbothermal reduction of boron oxide followed by nitridation. We apply the conversion to a wide variety of morphologies, including aerogels, carbon fibers and nanotubes, and highly oriented pyrolytic graphite. In the latter chapters, we look at the

  2. DC-to-DC switching converter

    NASA Technical Reports Server (NTRS)

    Cuk, Slobodan M. (Inventor); Middlebrook, Robert D. (Inventor)

    1980-01-01

    A dc-to-dc converter having nonpulsating input and output current uses two inductances, one in series with the input source, the other in series with the output load. An electrical energy transferring device with storage, namely storage capacitance, is used with suitable switching means between the inductances to DC level conversion. For isolation between the source and load, the capacitance may be divided into two capacitors coupled by a transformer, and for reducing ripple, the inductances may be coupled. With proper design of the coupling between the inductances, the current ripple can be reduced to zero at either the input or the output, or the reduction achievable in that way may be divided between the input and output.

  3. Microplasma Processed Ultrathin Boron Nitride Nanosheets for Polymer Nanocomposites with Enhanced Thermal Transport Performance.

    PubMed

    Zhang, Ri-Chao; Sun, Dan; Lu, Ai; Askari, Sadegh; Macias-Montero, Manuel; Joseph, Paul; Dixon, Dorian; Ostrikov, Kostya; Maguire, Paul; Mariotti, Davide

    2016-06-01

    This Research Article reports on the enhancement of the thermal transport properties of nanocomposite materials containing hexagonal boron nitride in poly(vinyl alcohol) through room-temperature atmospheric pressure direct-current microplasma processing. Results show that the microplasma treatment leads to exfoliation of the hexagonal boron nitride in isopropyl alcohol, reducing the number of stacks from >30 to a few or single layers. The thermal diffusivity of the resulting nanocomposites reaches 8.5 mm(2) s(-1), 50 times greater than blank poly(vinyl alcohol) and twice that of nanocomposites containing nonplasma treated boron nitride nanosheets. From TEM analysis, we observe much less aggregation of the nanosheets after plasma processing along with indications of an amorphous carbon interfacial layer, which may contribute to stable dispersion of boron nitride nanosheets in the resulting plasma treated colloids. PMID:27153343

  4. Radiation Effects on DC-DC Converters

    NASA Technical Reports Server (NTRS)

    Zhang, De-Xin; AbdulMazid, M. D.; Attia, John O.; Kankam, Mark D. (Technical Monitor)

    2001-01-01

    In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25

  5. Hafnium nitride buffer layers for growth of GaN on silicon

    DOEpatents

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  6. Preparation of coatings and surface modification by plasma and thermal processes

    NASA Astrophysics Data System (ADS)

    Yamashina, Toshiro; Hino, Tomoaki

    1987-05-01

    The application of various plasma and ion beam processes for the production of coatings and surface modification of materials, are reviewed. We describe, in particular, cold plasma techniques for the preparation of nitrides, carbides, oxides, bondes and so on and ion implantation techniques for modification of surfaces and interfaces by ion beam mixing to form alloys and chemical compounds on materials. Further, we present our recent collaborative studies on in situ coatings by a dc glow discharge of H 2 + CH 4 gas in torus devices. The carbon coatings deposited on surface probes at liner positions of TEXTOR and JIPPT-IIU are characterized in terms of depth composition profiles, chemical binding states and hydrogen concentration. Properties of these coatings produced by the dc glow discharge are compared with those by an ECR plasma and by a thermal decomposition of hydrocarbons at high temperature. Finally, our recent results on the formation of ceramics by the exposure of Tokamak plasmas and thermal heating will be discussed. TiC layers on a Ti-coated graphite probe and TiB x layers on a B-coated Ti probe were formed after the exposure to the scrape-off layer plasma in JIPPT-IIU, and TiC-TiN double layers on Ti-coated stainless steels were formed by vacuum heating at 600-1000°C.

  7. Gallium nitride nanotube lasers

    SciTech Connect

    Li, Changyi; Liu, Sheng; Hurtado, Antonio; Wright, Jeremy Benjamin; Xu, Huiwen; Luk, Ting Shan; Figiel, Jeffrey J.; Brener, Igal; Brueck, Steven R. J.; Wang, George T.

    2015-01-01

    Lasing is demonstrated from gallium nitride nanotubes fabricated using a two-step top-down technique. By optically pumping, we observed characteristics of lasing: a clear threshold, a narrow spectral, and guided emission from the nanotubes. In addition, annular lasing emission from the GaN nanotube is also observed, indicating that cross-sectional shape control can be employed to manipulate the properties of nanolasers. The nanotube lasers could be of interest for optical nanofluidic applications or application benefitting from a hollow beam shape.

  8. Synthesis and characterization of actinide nitrides

    SciTech Connect

    Jaques, Brian; Butt, Darryl P.; Marx, Brian M.; Hamdy, A.S.; Osterberg, Daniel; Balfour, Gordon

    2007-07-01

    A carbothermic reduction of the metal oxides in a hydrogen/nitrogen mixed gas stream prior to nitriding in a nitrogen gas stream was used to synthesize uranium nitride at 1500 deg. C, cerium nitride at 1400 deg. C, and dysprosium nitride at 1500 deg. C. Cerium nitride and dysprosium nitride were also synthesized via hydriding and nitriding the metal shavings at 900 deg. C and 1500 deg. C, respectively. Also, a novel ball-milling synthesis route was used to produce cerium nitride and dysprosium nitride from the metal shavings at room temperature. Dysprosium nitride was also produced by reacting the metal shavings in a high purity nitrogen gas stream at 1300 deg. C. All materials were characterized by phase analysis via X-ray diffraction. Only the high purity materials were further analyzed via chemical analysis to characterize the trace oxygen concentration. (authors)

  9. Multilevel DC link inverter

    DOEpatents

    Su, Gui-Jia

    2003-06-10

    A multilevel DC link inverter and method for improving torque response and current regulation in permanent magnet motors and switched reluctance motors having a low inductance includes a plurality of voltage controlled cells connected in series for applying a resulting dc voltage comprised of one or more incremental dc voltages. The cells are provided with switches for increasing the resulting applied dc voltage as speed and back EMF increase, while limiting the voltage that is applied to the commutation switches to perform PWM or dc voltage stepping functions, so as to limit current ripple in the stator windings below an acceptable level, typically 5%. Several embodiments are disclosed including inverters using IGBT's, inverters using thyristors. All of the inverters are operable in both motoring and regenerating modes.

  10. Silicon Nitride for Direct Water-Splitting and Corrosion Mitigation

    SciTech Connect

    Head, J.; Turner, J.A.

    2006-01-01

    Todays fossil fuels are becoming harder to obtain, creating pollution problems, and posing hazards to people’s health. One alternative to fossil fuels is hydrogen, capable of serving as a clean and efficient energy carrier. Certain semiconductors are able to harness the energy of photons and direct it into water electrolysis in a process known as photoelectrochemical water splitting. Triple junction devices integrate three semiconductors of different band gaps resulting in a monolithic material that absorbs over a broader spectrum. Amorphous silicon (a-Si) is one such material that, when stacked in tandem, possesses water-splitting capabilities. Even though a-Si is capable of splitting water, it is an unstable material in solution and therefore requires a coating to protect the surface from corrosion. A stable, transparent material that has the potential for corrosion protection is silicon nitride. In this study, silicon nitride thin films were grown using DC magnetron sputtering with varying amounts of argon and nitrogen added to the system. X-ray diffraction indicated amorphous silicon nitride films. Current as a function of potential was determined from cyclic voltammetry measurements. Mott-Schottky analysis showed n-type behavior with absorption and transmission measurements indicated variation in flatband potentials. Variation in band gap values ranging from 1.90 to 4.0 eV. Corrosion measurements reveal that the silicon nitride samples exhibit both p-type and n-type behavior. Photocurrent over a range of potentials was greater in samples that were submerged in acidic electrolyte. Silicon nitride shows good stability in acidic, neutral, and basic solutions, indicative of a good material for corrosion mitigation.

  11. Cordierite silicon nitride filters

    SciTech Connect

    Sawyer, J.; Buchan, B. ); Duiven, R.; Berger, M. ); Cleveland, J.; Ferri, J. )

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  12. Electrospun Gallium Nitride Nanofibers

    SciTech Connect

    Melendez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-04-19

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH{sub 3} flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  13. Electroluminescent Devices Using RE-Doped III-Nitrides

    NASA Astrophysics Data System (ADS)

    Wakahara, Akihiro

    The III-nitride semiconductors doped with RE atoms appear to be excellent materials for thin film optical device applications. The spectral coverage extends from UV to infrared and thus light-emitting devices suitable for full-color displays, solid-state lasers, and optical telecommunication fields are expected. This chapter reviews the current status of electrically pumped light-emitting devices based on RE-doped GaN, such as AC- and/or DC-biased electroluminescent (EL) devices and `p-n' junction based light-emitting diodes. The different excitation mechanisms are reviewed.

  14. Electroluminescent Devices Using RE-Doped III-Nitrides

    NASA Astrophysics Data System (ADS)

    Wakahara, Akihiro

    The III-nitride semiconductors doped with RE atoms appear to be excellent materials for thin film optical device applications. The spectral coverage extends from UV to infrared and thus light-emitting devices suitable for full-color displays, solid-state lasers, and optical telecommunication fields are expected. This chapter reviews the current status of electrically pumped light-emitting devices based on RE-doped GaN, such as AC- and/or DC-biased electroluminescent (EL) devices and 'p-n' junction based light-emitting diodes. The different excitation mechanisms are reviewed.

  15. Nitriding iron at lower temperatures.

    PubMed

    Tong, W P; Tao, N R; Wang, Z B; Lu, J; Lu, K

    2003-01-31

    The microstructure in the surface layer of a pure iron plate was refined at the nanometer scale by means of a surface mechanical attrition treatment that generates repetitive severe plastic deformation of the surface layer. The subsequent nitriding kinetics of the treated iron with the nanostructured surface layer were greatly enhanced, so that the nitriding temperature could be as low as 300 degrees C, which is much lower than conventional nitriding temperatures (above 500 degrees C). This enhanced processing method demonstrates the technological significance of nanomaterials in improving traditional processing techniques and provides a new approach for selective surface reactions in solids. PMID:12560546

  16. Silicon nitride coated silicon thin film on three dimensions current collector for lithium ion battery anode

    NASA Astrophysics Data System (ADS)

    Wu, Cheng-Yu; Chang, Chun-Chi; Duh, Jenq-Gong

    2016-09-01

    Silicon nitride coated silicon (N-Si) has been synthesized by two-step DC sputtering on Cu Micro-cone arrays (CMAs) at ambient temperature. The electrochemical properties of N-Si anodes with various thickness of nitride layer are investigated. From the potential window of 1.2 V-0.05 V, high rate charge-discharge and long cycle test have been executed to investigate the electrochemical performances of various N-Si coated Si-based lithium ion batteries anode materials. Higher specific capacity can be obtained after 200 cycles. The cycling stability is enhanced via thinner nitride layer coating as silicon nitride films are converted to Li3N with covered Si thin films. These N-Si anodes can be cycled under high rates up to 10 C due to low charge transfer resistance resulted from silicon nitride films. This indicates that the combination of silicon nitride and silicon can effectively endure high current and thus enhance the cycling stability. It is expected that N-Si is a potential candidate for batteries that can work effectively under high power.

  17. Preparation and study of Titanium Nitride films by reactive sputtering and an investigation of target poisoning during the process

    NASA Astrophysics Data System (ADS)

    Aziz, Tareque; Rumaiz, Abdul

    Titanium Nitride (TiNx) thin films were prepared by reactive dc sputtering in presence of Ar-N2 plasma. The thin films were grown on Quartz and pure Si surfaces. The Ar-N2 content ratio was gradually varied while the substrate and the Titanium target were kept at room temperature. Structural properties, optical and electrical properties of the thin films were studied by using X-ray Photoelectron Spectroscopy (XPS) and XRD and 4 probe resistivity measurement. Target poisoning of the Ti target was also studied by varying reactive gas concentration and measuring the target current. A study of target current vs growth rate of the films was performed to investigate the onset of ``poison'' mode.Although there was an insignificant drop in plasma current, we noticed a drop in the deposition rate. This result was tested against Monte Carlo simulations using SRIM simulations. Effects of annealing on the crystallinity and the sheet resistance will also be discussed. The work has been supported by BSA,DOE.

  18. Experimental observation of further frequency upshift from dc to ac radiation converter with perpendicular dc magnetic field

    PubMed

    Higashiguchi; Yugami; Gao; Niiyama; Sasaki; Takahashi; Ito; Nishida

    2000-11-20

    A frequency upshift of a short microwave pulse is generated by the interaction between a relativistic underdense ionization front and a periodic electrostatic field with a perpendicular dc magnetic field. When the dc magnetic field is applied, further frequency upshift of 3 GHz is observed with respect to an unmagnetized case which has typically a GHz range. The radiation frequency depends on both the plasma density and the strength of the dc magnetic field, i.e., the plasma frequency and the cyclotron frequency. The frequency of the emitted radiation is in reasonable agreement with the theoretical values. PMID:11082591

  19. Hard carbon nitride and method for preparing same

    DOEpatents

    Haller, Eugene E.; Cohen, Marvin L.; Hansen, William L.

    1992-01-01

    Novel crystalline .alpha. (silicon nitride-like)-carbon nitride and .beta. (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.

  20. Radiation-Tolerant DC-DC Converters

    NASA Technical Reports Server (NTRS)

    Skutt, Glenn; Sable, Dan; Leslie, Leonard; Graham, Shawn

    2012-01-01

    A document discusses power converters suitable for space use that meet the DSCC MIL-PRF-38534 Appendix G radiation hardness level P classification. A method for qualifying commercially produced electronic parts for DC-DC converters per the Defense Supply Center Columbus (DSCC) radiation hardened assurance requirements was developed. Development and compliance testing of standard hybrid converters suitable for space use were completed for missions with total dose radiation requirements of up to 30 kRad. This innovation provides the same overall performance as standard hybrid converters, but includes assurance of radiation- tolerant design through components and design compliance testing. This availability of design-certified radiation-tolerant converters can significantly reduce total cost and delivery time for power converters for space applications that fit the appropriate DSCC classification (30 kRad).

  1. Modification of Ion Nitriding of Ti-6Al-4V for Simultaneous Improvement of Wear and Fatigue Properties

    NASA Astrophysics Data System (ADS)

    Farokhzadeh, Khorameh

    Extensive application of titanium alloys in the aerospace sector is restricted due to their poor tribological properties especially when contact of surfaces is inevitable. Over the past few decades, many coating deposition and thermochemical treatments have been developed to improve the wear resistance of titanium alloys such as plasma (ion-) nitriding. A typical ion nitrided microstructure in titanium alloys consists of a thin surface layer composed of TiN and Ti 2N titanium nitrides (compound layer), a region of nitrogen-stabilized alpha-titanium (alpha-case), and a nitrogen diffusion zone. However, similar to other nitriding processes, the ion nitriding treatment involves high temperatures (750-1100°C) and results in brittle surface features and substrate microstructural changes that lead to deterioration of fatigue strength. In this research, a modified plasma nitriding treatment was developed to achieve simultaneous improvements of wear resistance and fatigue strength by optimization of the microstructure. The findings revealed that utilizing a low temperature of 600°C during the nitriding treatment inhibited the formation of brittle surface features (alpha-case) and bulk microstructural changes and increased the resistance of ion nitrided surfaces to surface crack initiation and propagation. The nitrided alloys exhibited a higher fatigue strength compared with those reported in the literature. Furthermore, at least 48% reduction in the coefficient of friction compared to the untreated alloy and considerable improvements in wear resistance were obtained by the formation of a thin (< 2 microm) compound layer on the surface supported by a 40 microm deep nitrogen diffusion zone. It was found that further improvements in wear resistance can be achieved by alteration of the surface microstructure prior to the plasma nitriding treatment. As such, a novel pretreatment step was developed to increase the nitriding kinetics at low temperatures via introducing a severe

  2. Forback DC-to-DC converter

    NASA Technical Reports Server (NTRS)

    Lukemire, Alan T. (Inventor)

    1995-01-01

    A pulse-width modulated DC-to-DC power converter including a first inductor, i.e. a transformer or an equivalent fixed inductor equal to the inductance of the secondary winding of the transformer, coupled across a source of DC input voltage via a transistor switch which is rendered alternately conductive (ON) and nonconductive (OFF) in accordance with a signal from a feedback control circuit is described. A first capacitor capacitively couples one side of the first inductor to a second inductor which is connected to a second capacitor which is coupled to the other side of the first inductor. A circuit load shunts the second capacitor. A semiconductor diode is additionally coupled from a common circuit connection between the first capacitor and the second inductor to the other side of the first inductor. A current sense transformer generating a current feedback signal for the switch control circuit is directly coupled in series with the other side of the first inductor so that the first capacitor, the second inductor and the current sense transformer are connected in series through the first inductor. The inductance values of the first and second inductors, moreover, are made identical. Such a converter topology results in a simultaneous voltsecond balance in the first inductance and ampere-second balance in the current sense transformer.

  3. Forback DC-to-DC converter

    NASA Technical Reports Server (NTRS)

    Lukemire, Alan T. (Inventor)

    1993-01-01

    A pulse-width modulated DC-to-DC power converter including a first inductor, i.e. a transformer or an equivalent fixed inductor equal to the inductance of the secondary winding of the transformer, coupled across a source of DC input voltage via a transistor switch which is rendered alternately conductive (ON) and nonconductive (OFF) in accordance with a signal from a feedback control circuit is described. A first capacitor capacitively couples one side of the first inductor to a second inductor which is connected to a second capacitor which is coupled to the other side of the first inductor. A circuit load shunts the second capacitor. A semiconductor diode is additionally coupled from a common circuit connection between the first capacitor and the second inductor to the other side of the first inductor. A current sense transformer generating a current feedback signal for the switch control circuit is directly coupled in series with the other side of the first inductor so that the first capacitor, the second inductor and the current sense transformer are connected in series through the first inductor. The inductance values of the first and second inductors, moreover, are made identical. Such a converter topology results in a simultaneous voltsecond balance in the first inductance and ampere-second balance in the current sense transformer.

  4. Boron nitride converted carbon fiber

    DOEpatents

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  5. Method for producing refractory nitrides

    DOEpatents

    Quinby, Thomas C.

    1989-01-24

    A process for making fine, uniform metal nitride powders that can be hot pressed or sintered. A metal salt is placed in a solvent with Melamine and warmed until a metal-Melamine compound forms. The solution is cooled and the metal-Melamine precipitate is calcined at a temperature below 700.degree. C. to form the metal nitrides and to avoid formation of the metal oxide.

  6. DEVELOPMENT OF TITANIUM NITRIDE COATING FOR SNS RING VACUUM CHAMBERS.

    SciTech Connect

    HE,P.; HSEUH,H.C.; MAPES,M.; TODD,R.; WEISS,D.

    2001-06-18

    The inner surface of the ring vacuum chambers of the US Spallation Neutron Source (SNS) will be coated with {approximately}100 nm of Titanium Nitride (TiN). This is to minimize the secondary electron yield (SEY) from the chamber wall, and thus avoid the so-called e-p instability caused by electron multipacting as observed in a few high-intensity proton storage rings. Both DC sputtering and DC-magnetron sputtering were conducted in a test chamber of relevant geometry to SNS ring vacuum chambers. Auger Electron Spectroscopy (AES) and Rutherford Back Scattering (RBS) were used to analyze the coatings for thickness, stoichiometry and impurity. Excellent results were obtained with magnetron sputtering. The development of the parameters for the coating process and the surface analysis results are presented.

  7. Superplastic forging nitride ceramics

    DOEpatents

    Panda, P.C.; Seydel, E.R.; Raj, R.

    1988-03-22

    A process is disclosed for preparing silicon nitride ceramic parts which are relatively flaw free and which need little or no machining, said process comprising the steps of: (a) preparing a starting powder by wet or dry mixing ingredients comprising by weight from about 70% to about 99% silicon nitride, from about 1% to about 30% of liquid phase forming additive and from 1% to about 7% free silicon; (b) cold pressing to obtain a preform of green density ranging from about 30% to about 75% of theoretical density; (c) sintering at atmospheric pressure in a nitrogen atmosphere at a temperature ranging from about 1,400 C to about 2,200 C to obtain a density which ranges from about 50% to about 100% of theoretical density and which is higher than said preform green density, and (d) press forging workpiece resulting from step (c) by isothermally uniaxially pressing said workpiece in an open die without initial contact between said workpiece and die wall perpendicular to the direction of pressing and so that pressed workpiece does not contact die wall perpendicular to the direction of pressing, to substantially final shape in a nitrogen atmosphere utilizing a temperature within the range of from about 1,400 C to essentially 1,750 C and strain rate within the range of about 10[sup [minus]7] to about 10[sup [minus]1] seconds[sup [minus]1], the temperature and strain rate being such that surface cracks do not occur, said pressing being carried out to obtain a shear deformation greater than 30% whereby superplastic forging is effected.

  8. Intelligent dc-dc Converter Technology Developed and Tested

    NASA Technical Reports Server (NTRS)

    Button, Robert M.

    2001-01-01

    The NASA Glenn Research Center and the Cleveland State University have developed a digitally controlled dc-dc converter to research the benefits of flexible, digital control on power electronics and systems. Initial research and testing has shown that conventional dc-dc converters can benefit from improved performance by using digital-signal processors and nonlinear control algorithms.

  9. Optimization of the ASPN Process to Bright Nitriding of Woodworking Tools Using the Taguchi Approach

    NASA Astrophysics Data System (ADS)

    Walkowicz, J.; Staśkiewicz, J.; Szafirowicz, K.; Jakrzewski, D.; Grzesiak, G.; Stępniak, M.

    2013-02-01

    The subject of the research is optimization of the parameters of the Active Screen Plasma Nitriding (ASPN) process of high speed steel planing knives used in woodworking. The Taguchi approach was applied for development of the plan of experiments and elaboration of obtained experimental results. The optimized ASPN parameters were: process duration, composition and pressure of the gaseous atmosphere, the substrate BIAS voltage and the substrate temperature. The results of the optimization procedure were verified by the tools' behavior in the sharpening operation performed in normal industrial conditions. The ASPN technology proved to be extremely suitable for nitriding the woodworking planing tools, which because of their specific geometry, in particular extremely sharp wedge angles, could not be successfully nitrided using conventional direct current plasma nitriding method. The carried out research proved that the values of fracture toughness coefficient K Ic are in correlation with maximum spalling depths of the cutting edge measured after sharpening, and therefore may be used as a measure of the nitrided planing knives quality. Based on this criterion the optimum parameters of the ASPN process for nitriding high speed planing knives were determined.

  10. Synthesis of ultrafine Si3N4 powder in RF-RF plasma

    SciTech Connect

    Sato, Michitaka; Nishio, Hiroaki

    1991-10-01

    A newly designed plasma-CVD apparatus mounted with the RF-RF type plasma torch was introduced to synthesize ultrafine powders of silicon nitride (Si3N4). The RF-RF plasma system (the combination of a main (lower) and controlling (upper) RF plasma) improved the stability of simple RF plasma and solved the impurity problem of dc-RF hybrid plasma. The reaction of SiCl4 and NH3, which were radially injected into the tail flames of the upper and lower plasmas, respectively, yielded near-stoichiometric amorphous powders of Si3N4. The nitrogen content in the products largely depended on the flow rate of the quenching gas, a mixture of NH3 (reactant) and H2. The oxygen content and metal impurities are 2-3 wt pct and less than 200 ppm, respectively. The powder particles had an average diameter of about 15 nm with a narrow size distribution, and showed extreme air sensitivity. Conspicuous crystallazation and particle growth occurred when heated at temperatures above 1400 C. These results suggested that the RF-RF system was a potential reactor for the synthesis of ultrafine powders with excellent sinterability at relatively low temperatures. 9 refs.

  11. Developments on DC/DC converters for the LHC experiment upgrades

    NASA Astrophysics Data System (ADS)

    Abbate, C.; Alderighi, M.; Baccaro, S.; Busatto, G.; Citterio, M.; Cova, P.; Delmonte, N.; De Luca, V.; Fiore, S.; Gerardin, S.; Ghisolfi, E.; Giuliani, F.; Iannuzzo, F.; Lanza, A.; Latorre, S.; Lazzaroni, M.; Meneghesso, G.; Paccagnella, A.; Rampazzo, F.; Riva, M.; Sanseverino, A.; Silvestri, R.; Spiazzi, G.; Velardi, F.; Zanoni, E.

    2014-02-01

    Prototypes of DC/DC power and Point of Load (PoL) converters were designed and built with the aim of satisfying the foreseen working parameters of the High Luminosity (HL) LHC experiments, using both Silicon (Si) MOSFETs and/or more recent devices substantiated of better power performance, like Silicon Carbide (SiC) and Gallium Nitride (GaN) transistors. Optimization of their design, based on the comparison between the simulated and measured thermal, electrical and mechanical performance, is in progress, and many improvements with respect to the previous versions are under implementation. We discuss in this paper the results of the last modifications. In addition, many tens of discrete component samples, chosen among the devices commercially available in the three different technologies (Si, SiC and GaN), were electrically characterized and tested under γ-rays, neutron, proton and heavy ion radiation, also using a combined run method. We have also planned to test some commercial DC/DCs under the extreme conditions of radiation and magnetic field expected in the upgrades of the LHC experiments. Here we show the first results on few samples.

  12. A low-power nitriding technique utilizing a microwave-excited radical flow

    NASA Astrophysics Data System (ADS)

    Itagaki, Hirotomo; Hirose, Shingo; Kim, Jaeho; Ogura, Mutsuo; Wang, Xuelun; Nonaka, Atsushi; Ogiso, Hisato; Sakakita, Hajime

    2016-06-01

    We report a novel low-power nitriding technique by utilizing a 2.45 GHz microwave-excited nitrogen radical flow system. Nitrogen plasma was produced at the nozzle with dimensions of 50 × 0.5 mm2 and blown onto the surface of a target substrate. A titanium substrate has been used as a target plate since it is easy to visualize a nitriding effect. The titanium substrate was treated under the conditions of 60 W microwave power, 20 Torr of nitrogen gas pressure, and a plate temperature of ∼800 °C. As a result, we have succeeded in nitriding of the titanium substrate in a quasi-atmospheric region of 20 Torr and of a very low power of 60 W with the hardness kept high, which is almost the same as the hardness processed by conventional nitriding methods.

  13. Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

    NASA Astrophysics Data System (ADS)

    Jia, Ye; Wallace, Joshua S.; Qin, Yueling; Gardella, Joseph A.; Dabiran, Amir M.; Singisetti, Uttam

    2016-04-01

    In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band offset between aluminum oxide and m-plane indium nitride was determined to be 2.83 eV. The Fermi level of indium nitride was 0.63 eV above valence band maximum, indicated a reduced band bending in comparison to polar indium nitride. The band gap of aluminum oxide was found to be to 6.7 eV, which gave a conduction band offset of 3.17 eV.

  14. Nitride micro-LEDs and beyond--a decade progress review.

    PubMed

    Jiang, H X; Lin, J Y

    2013-05-01

    Since their inception, micro-size light emitting diode (µLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a range of applications. This paper provides an overview on a decade progresses on realizing III-nitride µLED based high voltage single-chip AC/DC-LEDs without power converters to address the key compatibility issue between LEDs and AC power grid infrastructure; and high-resolution solid-state self-emissive microdisplays operating in an active driving scheme to address the need of high brightness, efficiency and robustness of microdisplays. These devices utilize the photonic integration approach by integrating µLED arrays on-chip. Other applications of nitride µLED arrays are also discussed. PMID:24104436

  15. Comparative complexity of emission spectra from ICP, dc, Arc, and spark excitation sources

    SciTech Connect

    Winge, R.K.; DeKalb, E.L.; Fassel, V.A.

    1985-07-01

    A comparison of atomic emission spectra excited in high voltage spark and dc are discharges and in an inductively coupled plasma revealed that the most complex spectra were emitted by the high voltage spark. The dc arc and the inductively coupled plasma yielded spectra of approximately equivalent complexity. These observations are not in accord with the impressions conveyed in the literature.

  16. Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry Pérot optical filters

    NASA Astrophysics Data System (ADS)

    Huang, H.; Winchester, K.; Liu, Y.; Hu, X. Z.; Musca, C. A.; Dell, J. M.; Faraone, L.

    2005-03-01

    This paper reports an investigation on techniques for determining elastic modulus and intrinsic stress gradient in plasma-enhanced chemical vapor deposition (PECVD) silicon nitride thin films. The elastic property of the silicon nitride thin films was determined using the nanoindentation method on silicon nitride/silicon bilayer systems. A simple empirical formula was developed to deconvolute the film elastic modulus. The intrinsic stress gradient in the films was determined by using micrometric cantilever beams, cross-membrane structures and mechanical simulation. The deflections of the silicon nitride thin film cantilever beams and cross-membranes caused by in-thickness stress gradients were measured using optical interference microscopy. Finite-element beam models were built to compute the deflection induced by the stress gradient. Matching the deflection computed under a given gradient with that measured experimentally on fabricated samples allows the stress gradient of the PECVD silicon nitride thin films introduced from the fabrication process to be evaluated.

  17. Nitride precipitation in salt-bath nitrided interstitial-free steel

    SciTech Connect

    Lee, Tae-Ho; Oh, Chang-Seok; Lee, Min-Ku; Han, Sang-Won

    2010-10-15

    Nitride precipitation and its effect on microstrain in salt-bath nitrided interstitial-free steel were investigated using transmission electron microscopy and neutron diffraction. As the cooling rate after nitriding decreased, two nitrides, {gamma}'-Fe{sub 4}N and {alpha}{sup -}Fe{sub 16}N{sub 2}, were identified in diffusion zone. Combined analyses using Rietveld whole-profile fitting and size-strain analysis revealed that the microstrain in the nitrided specimen increased due to nitrogen supersaturation and then decreased after nitride precipitation, whereas the effective particle size continuously decreased. It was found that microstrain is the dominant factor in peak broadening of the nitrided specimen.

  18. Aluminum nitride insulating films for MOSFET devices

    NASA Technical Reports Server (NTRS)

    Lewicki, G. W.; Maserjian, J.

    1972-01-01

    Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

  19. Ion-beam nitriding of steels

    NASA Technical Reports Server (NTRS)

    Salik, J.

    1985-01-01

    The application of the ion beam technique to the nitriding of steels is described. It is indicated that the technique can be successfully applied to nitriding. Some of the structural changes obtained by this technique are similar to those obtained by ion nitriding. The main difference is the absence of the iron nitride diffraction lines. It is found that the dependence of the resultant microhardness on beam voltage for super nitralloy is different from that of 304 stainless steel.

  20. Ion-beam nitriding of steels

    NASA Technical Reports Server (NTRS)

    Salik, J.

    1984-01-01

    The application of the ion beam technique to the nitriding of steels is described. It is indicated that the technique can be successfully applied to nitriding. Some of the structural changes obtained by this technique are similar to those obtained by ion nitriding. The main difference is the absence of the iron nitride diffraction lines. It is found that the dependence of the resultant microhardness on beam voltage for super nitralloy is different from that of 304 stainless steel.

  1. Silicon nitride/silicon carbide composite powders

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  2. Process for making transition metal nitride whiskers

    DOEpatents

    Bamberger, C.E.

    1988-04-12

    A process for making metal nitrides, particularly titanium nitride whiskers, using a cyanide salt as a reducing agent for a metal compound in the presence of an alkali metal oxide. Sodium cyanide, various titanates and titanium oxide mixed with sodium oxide react to provide titanium nitride whiskers that can be used as reinforcement to ceramic composites. 1 fig., 1 tab.

  3. Process for making transition metal nitride whiskers

    SciTech Connect

    Bamberger, Carlos E.

    1989-01-01

    A process for making metal nitrides, particularly titanium nitride whiskers, using a cyanide salt as a reducing agent for a metal compound in the presence of an alkali metal oxide. Sodium cyanide, various titanates and titanium oxide mixed with sodium oxide react to provide titanium nitride whiskers that can be used as reinforcement to ceramic composites.

  4. RISK D/C

    NASA Technical Reports Server (NTRS)

    Dias, W. C.

    1994-01-01

    RISK D/C is a prototype program which attempts to do program risk modeling for the Space Exploration Initiative (SEI) architectures proposed in the Synthesis Group Report. Risk assessment is made with respect to risk events, their probabilities, and the severities of potential results. The program allows risk mitigation strategies to be proposed for an exploration program architecture and to be ranked with respect to their effectiveness. RISK D/C allows for the fact that risk assessment in early planning phases is subjective. Although specific to the SEI in its present form, RISK D/C can be used as a framework for developing a risk assessment program for other specific uses. RISK D/C is organized into files, or stacks, of information, including the architecture, the hazard, and the risk event stacks. Although predefined, all stacks can be upgraded by a user. The architecture stack contains information concerning the general program alternatives, which are subsequently broken down into waypoints, missions, and mission phases. The hazard stack includes any background condition which could result in a risk event. A risk event is anything unfavorable that could happen during the course of a specific point within an architecture, and the risk event stack provides the probabilities, consequences, severities, and any mitigation strategies which could be used to reduce the risk of the event, and how much the risk is reduced. RISK D/C was developed for Macintosh series computers. It requires HyperCard 2.0 or later, as well as 2Mb of RAM and System 6.0.8 or later. A Macintosh II series computer is recommended due to speed concerns. The standard distribution medium for this package is one 3.5 inch 800K Macintosh format diskette. RISK D/C was developed in 1991 and is a copyrighted work with all copyright vested in NASA. Macintosh and HyperCard are trademarks of Apple Computer, Inc.

  5. DC Breakdown Experiments

    SciTech Connect

    Calatroni, S.; Descoeudres, A.; Levinsen, Y.; Taborelli, M.; Wuensch, W.

    2009-01-22

    In the context of the CLIC (Compact Linear Collider) project investigations of DC breakdown in ultra high vacuum are carried out in parallel with high power RF tests. From the point of view of saturation breakdown field the best material tested so far is stainless steel, followed by titanium. Copper shows a four times weaker breakdown field than stainless steel. The results indicate clearly that the breakdown events are initiated by field emission current and that the breakdown field is limited by the cathode. In analogy to RF, the breakdown probability has been measured in DC and the data show similar behaviour as a function of electric field.

  6. DC attenuation meter

    DOEpatents

    Hargrove, Douglas L.

    2004-09-14

    A portable, hand-held meter used to measure direct current (DC) attenuation in low impedance electrical signal cables and signal attenuators. A DC voltage is applied to the signal input of the cable and feedback to the control circuit through the signal cable and attenuators. The control circuit adjusts the applied voltage to the cable until the feedback voltage equals the reference voltage. The "units" of applied voltage required at the cable input is the system attenuation value of the cable and attenuators, which makes this meter unique. The meter may be used to calibrate data signal cables, attenuators, and cable-attenuator assemblies.

  7. Method and device to synthesize boron nitride nanotubes and related nanoparticles

    DOEpatents

    Zettl, Alexander K.

    2016-07-19

    Methods and apparatus for producing chemical nanostructures having multiple elements, such as boron and nitride, e.g. boron nitride nanotubes, are disclosed. The method comprises creating a plasma jet, or plume, such as by an arc discharge. The plasma plume is elongated and has a temperature gradient along its length. It extends along its length into a port connector area having ports for introduction of feed materials. The feed materials include the multiple elements, which are introduced separately as fluids or powders at multiple ports along the length of the plasma plume, said ports entering the plasma plume at different temperatures. The method further comprises modifying a temperature at a distal portion of or immediately downstream of said plasma plume; and collecting said chemical nanostructures after said modifying.

  8. Gadolinium nitride films deposited using a PEALD based process

    NASA Astrophysics Data System (ADS)

    Fang, Ziwen; Williams, Paul A.; Odedra, Rajesh; Jeon, Hyeongtag; Potter, Richard J.

    2012-01-01

    Gadolinium nitride films have been deposited on Si(100) using a plasma-enhanced ALD (PEALD) based process. The deposition was carried out using tris(methylcyclopentadienyl)gadolinium {Gd(MeCp) 3} and remote nitrogen plasma, separated by argon pulses. Films were deposited at temperatures between 150 and 300 °C and capped with tantalum nitride to prevent post-deposition oxidation. Film composition was initially assessed using EDX and selected samples were subsequently depth profiled using medium energy ion scattering (MEIS) or AES. X-ray diffraction appears to show that the films are effectively amorphous. Films deposited at 200 °C were found to have a Gd:N ratio close to 1:1 and a low oxygen incorporation (˜5%). Although the growth was affected by partial thermal decomposition of the Gd(MeCp) 3, it was still possible to obtain smooth (Ra.=˜0.7 nm) films with good thickness uniformity (97%). Less successful attempts to deposit gadolinium nitride using thermal ALD with ammonia or mono-methyl-hydrazine are also reported.

  9. Laser plume dynamics during excimer laser nitriding of iron

    NASA Astrophysics Data System (ADS)

    Han, M.; Carpene, E.; Lieb, K. P.; Schaaf, Peter

    2003-11-01

    Laser nitriding of iron is an interesting phenomenon both in physics and industry. On the time scale of hundreds nanoseconds, high intensity (~108 W/cm2) pulsed excimer laser irradiation on iron in nitrogen atmosphere produced a thin iron nitride layer (thickness > 400 nm) with a mean nitrogen concentration exceeding 10 at which greatly improves the iron surface mechanical properties and the corrosion or erosion resistance. Laser plasma/plume plays a crucial role in the complicated interplay of the laser-plasma-metal system. Since the nitrogen pressure is one of the most important parameters determining the laser plume dynamics, a nitrogen pressure series ranging from 0.05 bar to 10 bar is conducted. The characteristic parameters of the nitrogen depth profile are extracted and their pressure dependence is qualitatively discussed. By isotopic experiments in 15N and natural nitrogen environment, the evolution of the nitrogen depth profile during laser nitriding process is successfully traced. Both of the experimental results suggested that a 1D laser supported combustion wave model is reasonable to describe the lasers plume dynamics.

  10. III-Nitride nanowire optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, Songrui; Nguyen, Hieu P. T.; Kibria, Md. G.; Mi, Zetian

    2015-11-01

    Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

  11. AES study of ion-nitrided Fe-Mo and Fe-Mo-P P/M alloys

    SciTech Connect

    Molinari, A.; Straffelini, G.; Marchetti, F.

    1995-09-15

    In the present paper, the role of phosphorus in the microstructural transformations occurring during plasma nitriding of the Fe-Mo-P alloy is investigated and discussed. Auger Electron Spectroscopy (AES) measurements were carried out on the nitrided specimens. In fact, this technique has a good spatial resolution and nitrogen sensitivity and the line shape analysis represents a powerful tool for determining the chemical environment in which the emitting element is found. In this respect, a detailed study of the line shape of the nitrogen Auger transition was shown to be a powerful method to gain information on the nitrides precipitated in the surface layers.

  12. Laser nitriding of iron: Nitrogen profiles and phases

    NASA Astrophysics Data System (ADS)

    Illgner, C.; Schaaf, P.; Lieb, K. P.; Schubert, E.; Queitsch, R.; Bergmann, H.-W.

    1995-07-01

    Armco iron samples were surface nitrided by irradiating them with pulses of an excimer laser in a nitrogen atmosphere. The resulting nitrogen depth profiles measured by Resonant Nuclear Reaction Analysis (RNRA) and the phase formation determined by Conversion Electron Mössbauer Spectroscopy (CEMS) were investigated as functions of energy density and the number of pulses. The nitrogen content of the samples was found to be independent of the number of pulses in a layer of 50 nm from the surface and to increase in depths exceeding 150 nm. The phase composition did not change with the number of pulses. The nitrogen content can be related to an enhanced nitrogen solubility based on high temperatures and high pressures due to the laser-induced plasma above the sample. With increasing pulse energy density, the phase composition changes towards phases with higher nitrogen contents. Nitrogen diffusion seems to be the limiting factor for the nitriding process.

  13. DC arc weld starter

    DOEpatents

    Campiotti, Richard H.; Hopwood, James E.

    1990-01-01

    A system for starting an arc for welding uses three DC power supplies, a high voltage supply for initiating the arc, an intermediate voltage supply for sustaining the arc, and a low voltage welding supply directly connected across the gap after the high voltage supply is disconnected.

  14. DYLOS DC110

    EPA Science Inventory

    The Dylos DC1100 air quality monitor measures particulate matter (PM) to provide a continuous assessment of indoor air quality. The unit counts particles in two size ranges: large and small. According to the manufacturer, large particles have diameters between 2.5 and 10 micromet...

  15. Nitride tuning of lanthanide chromites.

    PubMed

    Black, Ashley P; Johnston, Hannah E; Oró-Solé, Judith; Bozzo, Bernat; Ritter, Clemens; Frontera, Carlos; Attfield, J Paul; Fuertes, Amparo

    2016-03-21

    LnCrO(3-x)N(x) perovskites with Ln = La, Pr and Nd and nitrogen contents up to x = 0.59 have been synthesised through ammonolysis of LnCrO4 precursors. These new materials represent one of the few examples of chromium oxynitrides. Hole-doping through O(2-)/N(3-) anion substitution suppresses the magnetic transition far less drastically than Ln(3+)/M(2+) (M = Ca, Sr) cation substitutions because of the greater covalency of metal-nitride bonds. Hence, nitride-doping is a more benign method for doping metal oxides without suppressing electronic transitions. PMID:26916315

  16. DC-DC powering for the CMS pixel upgrade

    NASA Astrophysics Data System (ADS)

    Feld, Lutz; Fleck, Martin; Friedrichs, Marcel; Hensch, Richard; Karpinski, Waclaw; Klein, Katja; Rittich, David; Sammet, Jan; Wlochal, Michael

    2013-12-01

    The CMS experiment plans to replace its silicon pixel detector with a new one with improved rate capability and an additional detection layer at the end of 2016. In order to cope with the increased number of detector modules the new pixel detector will be powered via DC-DC converters close to the sensitive detector volume. This paper reviews the DC-DC powering scheme and reports on the ongoing R&D program to develop converters for the pixel upgrade. Design choices are discussed and results from the electrical and thermal characterisation of converter prototypes are shown. An emphasis is put on system tests with up to 24 converters. The performance of pixel modules powered by DC-DC converters is compared to conventional powering. The integration of the DC-DC powering scheme into the pixel detector is described and system design issues are reviewed.

  17. Regulated dc-to-dc converter features low power drain

    NASA Technical Reports Server (NTRS)

    Thornwall, J.

    1968-01-01

    A regulated dc-to-dc converter requires negligible standby power for the operation of critical electronic equipment. The main operating circuitry consumes power intermittently according to load conditions, rather than constantly.

  18. Precipitation of metal nitrides from chloride melts

    SciTech Connect

    Slater, S.A.; Miller, W.E.; Willit, J.L.

    1996-12-31

    Precipitation of actinides, lanthanides, and fission products as nitrides from molten chloride melts is being investigated for use as a final cleanup step in treating radioactive salt wastes generated by electrometallurgical processing of spent nuclear fuel. The radioactive components (eg, fission products) need to be removed to reduce the volume of high-level waste that requires disposal. To extract the fission products from the salt, a nitride precipitation process is being developed. The salt waste is first contacted with a molten metal; after equilibrium is reached, a nitride is added to the metal phase. The insoluble nitrides can be recovered and converted to a borosilicate glass after air oxidation. For a bench-scale experimental setup, a crucible was designed to contact the salt and metal phases. Solubility tests were performed with candidate nitrides and metal nitrides for which there are no solubility data. Experiments were performed to assess feasibility of precipitation of metal nitrides from chloride melts.

  19. Homogeneous dispersion of gallium nitride nanoparticles in a boron nitride matrix by nitridation with urea.

    PubMed

    Kusunose, Takafumi; Sekino, Tohru; Ando, Yoichi

    2010-07-01

    A Gallium Nitride (GaN) dispersed boron nitride (BN) nanocomposite powder was synthesized by heating a mixture of gallium nitrate, boric acid, and urea in a hydrogen atmosphere. Before heat treatment, crystalline phases of urea, boric acid, and gallium nitrate were recognized, but an amorphous material was produced by heat treatment at 400 degrees C, and then was transformed into GaN and turbostratic BN (t-BN) by further heat treatment at 800 degrees C. TEM obsevations of this composite powder revealed that single nanosized GaN particles were homogeneously dispersed in a BN matrix. Homogeneous dispersion of GaN nanoparticles was thought to be attained by simultaneously nitriding gallium nitrate and boric acid to GaN and BN with urea. PMID:21128417

  20. Reactive Atmospheric Plasma Spraying of AlN Coatings: Influence of Aluminum Feedstock Particle Size

    NASA Astrophysics Data System (ADS)

    Shahien, Mohammed; Yamada, Motohiro; Yasui, Toshiaki; Fukumoto, Masahiro

    2011-03-01

    Feedstock powder characteristics (size distribution, morphology, shape, specific mass, and injection rate) are considered to be one of the key factors in controlling plasma-sprayed coatings microstructure and properties. The influence of feedstock powder characteristics to control the reaction and coatings microstructure in reactive plasma spraying process (RPS) is still unclear. This study, investigated the influence of feedstock particle size in RPS of aluminum nitride (AlN) coatings, through plasma nitriding of aluminum (Al) feedstock powders. It was possible to fabricate AlN-based coatings through plasma nitriding of all kinds of Al powders in atmospheric plasma spray (APS) process. The nitriding ratio was improved with decreasing the particle size of feedstock powder, due to improving the nitriding reaction during flight. However, decreasing the particle size of feedstock powder suppressed the coatings thickness. Due to the loss of the powder during the injection, the excessive vaporization of fine Al particles and the completing nitriding reaction of some fine Al particles during flight. The feedstock particle size directly affects on the nitriding, melting, flowability, and the vaporization behaviors of Al powders during spraying. It concluded that using smaller particle size powders is useful for improving the nitriding ratio and not suitable for fabrication thick AlN coatings in reactive plasma spray process. To fabricate thick AlN coatings through RPS, enhancing the nitriding reaction of Al powders with large particle size during spraying is required.

  1. Early Oscillation Detection for DC/DC Converter Fault Diagnosis

    NASA Technical Reports Server (NTRS)

    Wang, Bright L.

    2011-01-01

    The electrical power system of a spacecraft plays a very critical role for space mission success. Such a modern power system may contain numerous hybrid DC/DC converters both inside the power system electronics (PSE) units and onboard most of the flight electronics modules. One of the faulty conditions for DC/DC converter that poses serious threats to mission safety is the random occurrence of oscillation related to inherent instability characteristics of the DC/DC converters and design deficiency of the power systems. To ensure the highest reliability of the power system, oscillations in any form shall be promptly detected during part level testing, system integration tests, flight health monitoring, and on-board fault diagnosis. The popular gain/phase margin analysis method is capable of predicting stability levels of DC/DC converters, but it is limited only to verification of designs and to part-level testing on some of the models. This method has to inject noise signals into the control loop circuitry as required, thus, interrupts the DC/DC converter's normal operation and increases risks of degrading and damaging the flight unit. A novel technique to detect oscillations at early stage for flight hybrid DC/DC converters was developed.

  2. Alloying Element Nitride Development in Ferritic Fe-Based Materials Upon Nitriding: A Review

    NASA Astrophysics Data System (ADS)

    Steiner, T.; Mittemeijer, E. J.

    2016-04-01

    With the aim of achieving a better understanding of the nitriding process of iron-based components (steels), as applied in engineering practice, the theoretical background and experimental observations currently available on the crystallographic, morphological, and compositional properties of the nitride precipitates in nitrided model binary and ternary, ferritic Fe-based alloys are summarily presented. Thermodynamic and kinetic considerations are employed in order to highlight their importance for the nitriding reaction and the resulting properties of the nitrided zone, thereby providing a more fundamental understanding of the nitriding process.

  3. Alloying Element Nitride Development in Ferritic Fe-Based Materials Upon Nitriding: A Review

    NASA Astrophysics Data System (ADS)

    Steiner, T.; Mittemeijer, E. J.

    2016-06-01

    With the aim of achieving a better understanding of the nitriding process of iron-based components (steels), as applied in engineering practice, the theoretical background and experimental observations currently available on the crystallographic, morphological, and compositional properties of the nitride precipitates in nitrided model binary and ternary, ferritic Fe-based alloys are summarily presented. Thermodynamic and kinetic considerations are employed in order to highlight their importance for the nitriding reaction and the resulting properties of the nitrided zone, thereby providing a more fundamental understanding of the nitriding process.

  4. Method of chemical vapor deposition of boron nitride using polymeric cyanoborane

    DOEpatents

    Maya, L.

    1994-06-14

    Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film. 11 figs.

  5. Method of chemical vapor deposition of boron nitride using polymeric cyanoborane

    DOEpatents

    Maya, Leon

    1994-01-01

    Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film.

  6. The Hardest Superconducting Metal Nitride

    SciTech Connect

    Wang, Shanmin; Antonio, Daniel; Yu, Xiaohui; Zhang, Jianzhong; Cornelius, Andrew L.; He, Duanwei; Zhao, Yusheng

    2015-09-03

    Transition–metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock–salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10–20 GPa. Here, we report high–pressure synthesis of hexagonal δ–MoN and cubic γ–MoN through an ion–exchange reaction at 3.5 GPa. The final products are in the bulk form with crystallite sizes of 50 – 80 μm. Based on indentation testing on single crystals, hexagonal δ–MoN exhibits excellent hardness of ~30 GPa, which is 30% higher than cubic γ–MoN (~23 GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo–N network than that in cubic phase. The measured superconducting transition temperatures for δ–MoN and cubic γ–MoN are 13.8 and 5.5 K, respectively, in good agreement with previous measurements.

  7. P-type gallium nitride

    DOEpatents

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  8. P-type gallium nitride

    DOEpatents

    Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  9. The Hardest Superconducting Metal Nitride

    PubMed Central

    Wang, Shanmin; Antonio, Daniel; Yu, Xiaohui; Zhang, Jianzhong; Cornelius, Andrew L.; He, Duanwei; Zhao, Yusheng

    2015-01-01

    Transition–metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock–salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10–20 GPa. Here, we report high–pressure synthesis of hexagonal δ–MoN and cubic γ–MoN through an ion–exchange reaction at 3.5 GPa. The final products are in the bulk form with crystallite sizes of 50 – 80 μm. Based on indentation testing on single crystals, hexagonal δ–MoN exhibits excellent hardness of ~30 GPa, which is 30% higher than cubic γ–MoN (~23 GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo–N network than that in cubic phase. The measured superconducting transition temperatures for δ–MoN and cubic γ–MoN are 13.8 and 5.5 K, respectively, in good agreement with previous measurements. PMID:26333418

  10. Structure of boron nitride nanotubes

    SciTech Connect

    Buranova, Yu. S. Kulnitskiy, B. A.; Perezhogin, I. A.; Blank, V. D.

    2015-01-15

    The crystallographic structure of boron nitride nanotubes has been investigated. Various defects that may arise during nanotube synthesis are revealed by electron microscopy. Nanotubes with different numbers of walls and different diameters are modeled by molecular dynamics methods. Structural features of single-wall nanotubes are demonstrated. The causes of certain defects in multiwall nanotubes are indicated.

  11. The Hardest Superconducting Metal Nitride

    NASA Astrophysics Data System (ADS)

    Wang, Shanmin; Antonio, Daniel; Yu, Xiaohui; Zhang, Jianzhong; Cornelius, Andrew L.; He, Duanwei; Zhao, Yusheng

    2015-09-01

    Transition-metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock-salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10-20 GPa. Here, we report high-pressure synthesis of hexagonal δ-MoN and cubic γ-MoN through an ion-exchange reaction at 3.5 GPa. The final products are in the bulk form with crystallite sizes of 50 - 80 μm. Based on indentation testing on single crystals, hexagonal δ-MoN exhibits excellent hardness of ~30 GPa, which is 30% higher than cubic γ-MoN (~23 GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo-N network than that in cubic phase. The measured superconducting transition temperatures for δ-MoN and cubic γ-MoN are 13.8 and 5.5 K, respectively, in good agreement with previous measurements.

  12. The Hardest Superconducting Metal Nitride

    DOE PAGESBeta

    Wang, Shanmin; Antonio, Daniel; Yu, Xiaohui; Zhang, Jianzhong; Cornelius, Andrew L.; He, Duanwei; Zhao, Yusheng

    2015-09-03

    Transition–metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock–salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10–20 GPa. Here, we report high–pressure synthesis of hexagonal δ–MoN and cubic γ–MoN through an ion–exchange reaction at 3.5 GPa. The final products are in the bulk form withmore » crystallite sizes of 50 – 80 μm. Based on indentation testing on single crystals, hexagonal δ–MoN exhibits excellent hardness of ~30 GPa, which is 30% higher than cubic γ–MoN (~23 GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo–N network than that in cubic phase. The measured superconducting transition temperatures for δ–MoN and cubic γ–MoN are 13.8 and 5.5 K, respectively, in good agreement with previous measurements.« less

  13. DC Electric Fields at the Magnetopause

    NASA Astrophysics Data System (ADS)

    Laakso, H. E.; Escoubet, C. P.; Masson, A.

    2014-12-01

    In order to understand the transfer of energy, momentum and mass through the magnetopause one needs to know several plasma and field parameters including the DC electric field which is known to be challenging to measure in tenuous plasma regions, e.g. in the inner side of the magnetopause where the density drops below 1/cc. However, each of the Cluster spacecraft carries five different experiments that can provide information about DC electric fields, i.e. double probe antenna (EFW) and electron drift meter (EDI) as well as electron and ion spectrometers (PEACE, CIS-HIA, CIS-CODIF). Each technique is very different and has its own strengths and limitations. Therefore it is important to compare all available measurements before making a judgement on DC electric field variation at the magnetopause; note that only very rarely all five measurements are available at the same time. Although the full-resolution observations in the Cluster archive are calibrated, they can still contain various errors. However, when two experiments show the same field, it is quite likely that this is the right field because the different measurements are based on so complimentary techniques and the field varies so much when the spacecraft moves from the magnetosheath through the magnetopause into the magnetosphere, or vice versa. In this presentation we present several cases of the magnetopause crossings and how the different measurements agree and disagree around the magnetopause region.

  14. Wide-bandwidth silicon nitride membrane microphones

    NASA Astrophysics Data System (ADS)

    Cunningham, Brian T.; Bernstein, Jonathan J.

    1997-09-01

    Small, low cost microphones with high sensitivity at frequencies greater than 20 KHz are desired for applications such as ultrasonic imaging and communication links. To minimize stray capacitance between the microphone and its amplifier circuit, process compatibility between the microphone and on-chip circuitry is also desired to facilitate integration. In this work, we have demonstrated micromachined microphones packaged with hybrid JFET amplifier circuitry with frequency response extending to 100 KHz, and voltage sensitivity of approximately 2.0 mV/Pa from 100 Hz to 10 KHz, and 16.5 mV/Pa at 30 KHz with a bias voltage of 8.0 V. The microphones are fabricated with membranes and fixed backplates made of low temperature plasma-enhanced chemical vapor deposited (PECVD) silicon nitride. Because the maximum temperature of the fabrication process is 300 degrees Celsius, microphones may be built on silicon wafers from any commercial CMOS foundry without affecting transistor characteristics, allowing integration with sophisticated amplifier circuitry. Low stress silicon nitride deposition was used to produce membranes up to 2.0 mm diameter and 0.5 micrometer thickness with plus or minus 0.10 micrometer flatness. The excellent planarity of both the diaphragm and the backplate, combined with a narrow sense gap (approximately 2 micrometers) results in high output capacitance (up to 6.0 pF). The high output capacitance results in noise spectral density which is approximately 3x lower than silicon diaphragms microphones previously fabricated by the authors. Diaphragms with corrugations were fabricated to relive tensile stress, to increase deflection per unit pressure and to increase deflection linearity with pressure.

  15. Oxidation behavior of titanium nitride films

    NASA Astrophysics Data System (ADS)

    Chen, Hong-Ying; Lu, Fu-Hsing

    2005-07-01

    The oxidation behavior of titanium nitride (TiN) films has been investigated by using x-ray diffraction, Raman scattering spectroscopy, and field emission scanning electron microscopy. TiN films were deposited onto Si substrates by using cathodic arc plasma deposition technique. After that, the films were annealed in the air at 500-800 °C for 2 h. The x-ray diffraction spectra showed that rutile-TiO2 appeared above 600 °C. The relative intensity of TiO2 rapidly increased with temperatures. Only rutile-TiO2 was detected above 700 °C. Raman scattering spectra indicated the presence of rutile-TiO2 signals above 500 °C. Meanwhile an additional Si peak appeared at 700 °C in Raman spectra, above which only Si peak appeared. Many nano pores were found on the surface of films annealed at temperatures between 600 and 700 °C in field emission scanning electron microscopy, while the granular structure existed at 800 °C. The as-deposited TiN films had an apparent columnar structure. The thin and dense oxide overlayer appeared at 500 °C, and thicker oxide layer existed above 600 °C. The elongated grain structure with many voids existed in the film at 800 °C. These pores-voids might result from the nitrogen release during the oxidation of the nitride. The oxide layer obviously grows inward indicating the oxidation of TiN films belongs to an inward oxidation. The pre-exponential factor and the activation energy of the oxidation were evaluated by Arrhenius-type relation. These values were 2.2×10-6 cm2/s and 110+/-10 kJ/mol, which are consistent with those reports in the literature.

  16. DC current monitor

    NASA Technical Reports Server (NTRS)

    Canter, Stanley (Inventor)

    1991-01-01

    A non-intrusive DC current monitor is presented which emulates the theoretical operation of an AC transformer. A conductor, carrying the current to be measured, acts as the primary of a DC current transformer. This current is passed through the center of a secondary coil, and core positioned thereabout, and produces a magnetic flux which induces a current in the secondary proportional to the current flowing in the primary. Means are provided to periodically reset the transformer core such that the measurement inaccuracies associated with core saturation are obviated. A reset current is caused to periodically flow through the secondary coil which produces a magnetic flux oppositely polarized to the flux created by the current in the primary, thus allowing ongoing measurements to be made.

  17. Fully CMOS-compatible titanium nitride nanoantennas

    NASA Astrophysics Data System (ADS)

    Briggs, Justin A.; Naik, Gururaj V.; Petach, Trevor A.; Baum, Brian K.; Goldhaber-Gordon, David; Dionne, Jennifer A.

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  18. Tribological properties of boron nitride synthesized by ion beam deposition

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.; Spalvins, T.

    1985-01-01

    The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

  19. The new Polish nitriding and nitriding like processes in the modern technology

    SciTech Connect

    Has, Z.; Kula, P.

    1995-12-31

    Modern technological methods for making nitrided layers and low-friction combined layers have been described. The possibilities of structures and properties forming were analyzed as well as the area and examples of application were considered. Nitrided layers are applied in high loaded frictional couples, widely. They can be formed on steel or cast iron machine parts by the classic gas nitriding process or by modern numerous nitriding technologies.

  20. High temperature behavior of simulated mixed nitrides

    NASA Astrophysics Data System (ADS)

    Baranov, V. G.; Lunev, A. V.; Mikhalchik, V. V.; Tenishev, A. V.; Shornikov, D. P.

    2016-04-01

    Specimen of uranium-based mixed nitrides were synthesized by high-temperature nitriding of metal powder. To investigate thermal stability, samples were annealed at high temperature in a helium atmosphere. During these experiments, the effect of increasing the exposure temperature is studied. Raising the exposure temperature results in a multifold increase of mass loss. A comparison with data on pure uranium nitride shows that increasing the complexity of the nitride systems also results in higher mass loss. Later microscopic investigation of test samples revealed that metal precipitates may be found only on the surface of test samples. Electron probe micro-analysis indicates these precipitates to be uranium metal. Nevertheless, compared to pure uranium nitride, uranium-based mixed nitrides exhibit active evaporation at lower temperatures